Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

High-performance spinning device for DVD-based micromechanical signal transduction

DEFF Research Database (Denmark)

Hwu, En-Te; Chen, Ching-Hsiu; Bosco, Filippo

2013-01-01

Here we report a high-throughput spinning device for nanometric scale measurements of microstructures with instrumentation details and experimental results. The readout technology implemented in the designed disc-like device is based on a DVD data storage optical pick-up unit (OPU). With a spinning...

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

Science.gov (United States)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

Directory of Open Access Journals (Sweden)

M. Ciorga

2011-06-01

Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

First drop dissimilarity in drop-on-demand inkjet devices

International Nuclear Information System (INIS)

Famili, Amin; Palkar, Saurabh A.; Baldy, William J. Jr.

2011-01-01

As inkjet printing technology is increasingly applied in a broader array of applications, careful characterization of its method of use is critical due to its inherent sensitivity. A common operational mode in inkjet technology known as drop-on-demand ejection is used as a way to deliver a controlled quantity of material to a precise location on a target. This method of operation allows ejection of individual or a sequence (burst) of drops based on a timed trigger event. This work presents an examination of sequences of drops as they are ejected, indicating a number of phenomena that must be considered when designing a drop-on-demand inkjet system. These phenomena appear to be driven by differences between the first ejected drop in a burst and those that follow it and result in a break-down of the linear relationship expected between driving amplitude and drop mass. This first drop, as quantified by high-speed videography and subsequent image analysis, can be different in morphology, trajectory, velocity, and volume from subsequent drops within a burst. These findings were confirmed orthogonally by both volume and mass measurement techniques which allowed quantitation down to single drops.

In situ scanning tunneling microscope tip treatment device for spin polarization imaging

Science.gov (United States)

Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

2008-04-22

A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

Spin-wave logic devices based on isotropic forward volume magnetostatic waves

International Nuclear Information System (INIS)

Klingler, S.; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

2015-01-01

We propose the utilization of isotropic forward volume magnetostatic spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical simulations that the proposed out-of-plane magnetized majority gate overcomes the limitations of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission through the gate, which enables a reduced energy consumption of these devices. Moreover, the functionality of the out-of-plane majority gate is increased due to the lack of parasitic generation of short-wavelength exchange spin waves

Spin-wave logic devices based on isotropic forward volume magnetostatic waves

Energy Technology Data Exchange (ETDEWEB)

Klingler, S., E-mail: stefan.klingler@wmi.badw-muenchen.de; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

2015-05-25

We propose the utilization of isotropic forward volume magnetostatic spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical simulations that the proposed out-of-plane magnetized majority gate overcomes the limitations of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission through the gate, which enables a reduced energy consumption of these devices. Moreover, the functionality of the out-of-plane majority gate is increased due to the lack of parasitic generation of short-wavelength exchange spin waves.

A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

Directory of Open Access Journals (Sweden)

Rugang Geng

2016-09-01

Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

A device for simultaneous spin analysis of ultracold neutrons

Energy Technology Data Exchange (ETDEWEB)

Afach, S. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Paul Scherrer Institute, Villigen-PSI (Switzerland); Jena University Hospital, Hans Berger Department of Neurology, Jena (Germany); Ban, G.; Lefort, T.; Lemiere, Y.; Naviliat-Cuncic, O.; Quemener, G. [Universite de Caen, CNRS/IN2P3, LPC Caen ENSICAEN, Caen (France); Bison, G.; Chowdhuri, Z.; Daum, M.; Henneck, R.; Lauss, B.; Mtchedlishvili, A.; Schmidt-Wellenburg, P.; Zsigmond, G. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Bodek, K.; Rawlik, M.; Rozpedzik, D.; Zejma, J. [Jagiellonian University, Marian Smoluchowski Institute of Physics, Cracow (Poland); Fertl, M.; Franke, B.; Kirch, K.; Komposch, S. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Paul Scherrer Institute, Villigen-PSI (Switzerland); Geltenbort, P. [Institut Laue-Langevin, Grenoble (France); Grujic, Z.D.; Kasprzak, M.; Weis, A. [University of Fribourg, Physics Department, Fribourg (Switzerland); Hayen, L.; Severijns, N.; Wursten, E. [Katholieke Universiteit Leuven, Instituut voor Kernen Stralingsfysica, Leuven (Belgium); Helaine, V. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Universite de Caen, CNRS/IN2P3, LPC Caen ENSICAEN, Caen (France); Kermaidic, Y.; Pignol, G.; Rebreyend, D. [Universite Grenoble Alpes, CNRS/IN2P3, LPSC, Grenoble (France); Kozela, A. [Henryk Niedwodniczanski Institute for Nuclear Physics, Cracow (Poland); Krempel, J.; Piegsa, F.M. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Prashanth, P.N. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Katholieke Universiteit Leuven, Instituut voor Kernen Stralingsfysica, Leuven (Belgium); Ries, D. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Jena University Hospital, Hans Berger Department of Neurology, Jena (Germany); Roccia, S. [Universite Paris Sud, CNRS/IN2P3, CSNSM, Orsay campus (France); Wyszynski, G. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Jagiellonian University, Marian Smoluchowski Institute of Physics, Cracow (Poland)

2015-11-15

We report on the design and first tests of a device allowing for measurement of ultracold neutrons polarisation by means of the simultaneous analysis of the two spin components. The device was developed in the framework of the neutron electric dipole moment experiment at the Paul Scherrer Institute. Individual parts and the entire newly built system have been characterised with ultracold neutrons. The gain in statistical sensitivity obtained with the simultaneous spin analyser is (18.2 ± 6.1) % relative to the former sequential analyser under nominal running conditions. (orig.)

Spin Coherence in Silicon-based Quantum Structures and Devices

Science.gov (United States)

2017-08-31

Using electron spin resonance (ESR) to measure the den- sity of shallow traps, we find that the two sets of devices are nearly identical , indicating...experiments which cannot utilize a clock transition or a field-cancelling decoherence-free subspace. Our approach was to lock the microwave source driving...the electron spins to a strong nuclear spin signal. In our initial experiments we locked to the proton signal in a water cell. However, the noise in

Leading research report for fiscal 1999. Fundamental technology of spin electronic device; 1999 nendo spin toronikusu soshi kiban gijutsu kenkyu hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

The project, with attention paid to both spin and charge of electrons, aims to draw the best of the said two attributes of electrons by use of the state of the art in manufacturing technology for the creation of novel electronic devices. The nonvolatile MRAM (magnetic random access memory), which is the nearest to commercialization, is a tunnel device consisting of two sheet-shape ferromagnetic metal electrodes and an insulator film sandwiched between the said two electrodes, with the lower electrode magnetized only in one direction. The tunnel resistance changes when the magnetization direction in the upper electrode changes left and right (1, 0) according to an external writing magnetic field, and this enables nondestructive readout. The upper electrode magnetization direction remains unchanged thanks to hysteresis when the external writing magnetic field is turned off, and this allows the device to serve as a nonvolatile memory device. The device has a potential for higher speeds and enhanced integration. Much is also expected from a spin conduction functional device utilizing spin-dependent electric conduction, spin optical function device, spin quantum calculation directly utilizing quantum state, magnetic field sensor, etc. Their importance is great economically and socially, and technologies relating to magnetism and semiconductor should be merged for their further development. (NEDO)

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

Science.gov (United States)

Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

2014-05-01

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

Controllable spin-charge transport in strained graphene nanoribbon devices

Energy Technology Data Exchange (ETDEWEB)

Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-09-21

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

Spin-splitting in p-type Ge devices

Energy Technology Data Exchange (ETDEWEB)

Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-08-28

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

Quantum dot as spin current generator and energy harvester

Science.gov (United States)

Szukiewicz, Barbara; Wysokiński, Karol I.

2015-05-01

The thermoelectric transport in the device composed of a central nanoscopic system in contact with two electrodes and subject to the external magnetic field of Zeeman type has been studied. The device can support pure spin current in the electrodes and may serve as a source of the temperature induced spin currents with possible applications in spintronics. The system may also be used as an energy harvester. We calculate its thermodynamic efficiency η and the power output P. The maximal efficiency of the device reaches the Carnot value when the device works reversibly but with the vanishing power. The interactions between carriers diminish the maximal efficiency of the device, which under the constant load drops well below the Carnot limit but may exceed the Curzon-Ahlborn limit. While the effect of intradot Coulomb repulsion on η depends on the parameters, the interdot/interlevel interaction strongly diminishes the device efficiency.

Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

Science.gov (United States)

Bhat, Shwetha G.; Kumar, P. S. Anil

2016-12-01

Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (ΔV) in semiconductor is found to be associated with a drastic increment in ΔV in Fe3O4 based devices for temperature metal-to-insulator transition of Fe3O4 at T V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T V has to be reinvestigated.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

Science.gov (United States)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

NARCIS (Netherlands)

Vera Marun, I.J.

2010-01-01

This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

Magnetic field devices for neutron spin transport and manipulation in precise neutron spin rotation measurements

Energy Technology Data Exchange (ETDEWEB)

Maldonado-Velázquez, M. [Posgrado en Ciencias Físicas, Universidad Nacional Autónoma de México, 04510 (Mexico); Barrón-Palos, L., E-mail: libertad@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 (Mexico); Crawford, C. [University of Kentucky, Lexington, KY 40506 (United States); Snow, W.M. [Indiana University, Bloomington, IN 47405 (United States)

2017-05-11

The neutron spin is a critical degree of freedom for many precision measurements using low-energy neutrons. Fundamental symmetries and interactions can be studied using polarized neutrons. Parity-violation (PV) in the hadronic weak interaction and the search for exotic forces that depend on the relative spin and velocity, are two questions of fundamental physics that can be studied via the neutron spin rotations that arise from the interaction of polarized cold neutrons and unpolarized matter. The Neutron Spin Rotation (NSR) collaboration developed a neutron polarimeter, capable of determining neutron spin rotations of the order of 10{sup −7} rad per meter of traversed material. This paper describes two key components of the NSR apparatus, responsible for the transport and manipulation of the spin of the neutrons before and after the target region, which is surrounded by magnetic shielding and where residual magnetic fields need to be below 100 μG. These magnetic field devices, called input and output coils, provide the magnetic field for adiabatic transport of the neutron spin in the regions outside the magnetic shielding while producing a sharp nonadiabatic transition of the neutron spin when entering/exiting the low-magnetic-field region. In addition, the coils are self contained, forcing the return magnetic flux into a compact region of space to minimize fringe fields outside. The design of the input and output coils is based on the magnetic scalar potential method.

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

Science.gov (United States)

Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

2016-10-01

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices

Science.gov (United States)

Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.

Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.

Increased drop formation frequency via reduction of surfactant interactions in flow-focusing microfluidic devices.

Science.gov (United States)

Josephides, Dimitris N; Sajjadi, Shahriar

2015-01-27

Glass capillary based microfluidic devices are able to create extremely uniform droplets, when formed under the dripping regime, at low setup costs due to their ease of manufacture. However, as they are rarely parallelized, simple methods to increase droplet production from a single device are sought. Surfactants used to stabilize drops in such systems often limit the maximum flow rate that highly uniform drops can be produced due to the lowering interfacial tension causing jetting. In this paper we show that by simple design changes we can limit the interactions of surfactants and maximize uniform droplet production. Three flow-focused configurations are explored: a standard glass capillary device (consisting of a single round capillary inserted into a square capillary), a nozzle fed device, and a surfactant shielding device (both consisting of two round capillaries inserted into either end of a square capillary). In principle, the maximum productivity of uniform droplets is achieved if surfactants are not present. It was found that surfactants in the standard device greatly inhibit droplet production by means of interfacial tension lowering and tip-streaming phenomena. In the nozzle fed configuration, surfactant interactions were greatly limited, yielding flow rates comparable to, but lower than, a surfactant-free system. In the surfactant shielding configuration, flow rates were equal to that of a surfactant-free system and could make uniform droplets at rates an order of magnitude above the standard surfactant system.

Voltage-Controlled Reconfigurable Spin-Wave Nanochannels and Logic Devices

Science.gov (United States)

Rana, Bivas; Otani, YoshiChika

2018-01-01

Propagating spin waves (SWs) promise to be a potential information carrier in future spintronics devices with lower power consumption. Here, we propose reconfigurable nanochannels (NCs) generated by voltage-controlled magnetic anisotropy (VCMA) in an ultrathin ferromagnetic waveguide for SW propagation. Numerical micromagnetic simulations are performed to demonstrate the confinement of magnetostatic forward volumelike spin waves in NCs by VCMA. We demonstrate that the NCs, with a width down to a few tens of a nanometer, can be configured either into a straight or curved structure on an extended SW waveguide. The key advantage is that either a single NC or any combination of a number of NCs can be easily configured by VCMA for simultaneous propagation of SWs either with the same or different wave vectors according to our needs. Furthermore, we demonstrate the logic operation of a voltage-controlled magnonic xnor and universal nand gate and propose a voltage-controlled reconfigurable SW switch for the development of a multiplexer and demultiplexer. We find that the NCs and logic devices can even be functioning in the absence of the external-bias magnetic field. These results are a step towards the development of all-voltage-controlled magnonic devices with an ultralow power consumption.

Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

Science.gov (United States)

Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

2018-04-01

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

Electron-Spin Filters Would Offer Spin Polarization Greater than 1

Science.gov (United States)

Ting, David Z.

2009-01-01

A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

Electrical detection of proton-spin motion in a polymer device at room temperature

Science.gov (United States)

Boehme, Christoph

With the emergence of spintronics concepts based on organic semiconductors there has been renewed interest in the role of both, electron as well as nuclear spin states for the magneto-optoelectronic properties of these materials. In spite of decades of research on these molecular systems, there is still much need for an understanding of some of the fundamental properties of spin-controlled charge carrier transport and recombination processes. This presentation focuses on mechanisms that allow proton spin states to influence electronic transition rates in organic semiconductors. Remarkably, even at low-magnetic field conditions and room temperature, nuclear spin states with energy splittings orders of magnitude below thermal energies are able to influence observables like magnetoresistance and fluorescence. While proton spins couple to charge carrier spins via hyperfine interaction, there has been considerable debate about the nature of the electronic processes that are highly susceptible to these weak hyperfine fields. Here, experiments are presented which show how the magnetic resonant manipulation of electron and nuclear spin states in a π-conjugated polymer device causes changes of the device current. The experiments confirm the extraordinary sensitivity of electronic transitions to very weak magnetic field changes and underscore the potential significance of spin-selection rules for highly sensitive absolute magnetic fields sensor concepts. However, the relevance of these magnetic-field sensitive spin-dependent electron transitions is not just limited to semiconductor materials but also radical pair chemistry and even avian magnetoreceptors This work was supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award #DE-SC0000909. The Utah NSF - MRSEC program #DMR 1121252 is acknowledged for instrumentation support.

Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

Science.gov (United States)

Lou, Xiaohua

2007-03-01

A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures

Science.gov (United States)

Abert, Claas; Sepehri-Amin, Hossein; Bruckner, Florian; Vogler, Christoph; Hayashi, Masamitsu; Suess, Dieter

2018-05-01

The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back-hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the destabilization of the pinned layer, which leads to the perpetual switching of both layers. While the presented mechanism is not claimed to be the only possible reason for back-hopping, we show that it is a fundamental effect that will occur in any spin-transfer-torque device when exceeding a critical current. The influence of different material parameters on the critical switching currents for the free and pinned layer is obtained by micromagnetic simulations. The spin-diffusion model enables an accurate description of the torque on both layers, depending on various material parameters. It is found that the choice of a free-layer material with low polarization β and saturation magnetization Ms and a pinned-layer material with high β and Ms leads to a low free-layer critical current and a high pinned-layer critical current and hence reduces the likelihood of back-hopping. While back-hopping has been observed in various types of devices, there are only a few experiments that exhibit this effect in perpendicularly magnetized systems. However, our simulations suggest that the described effect will also gain importance in perpendicular systems due to the loss of pinned-layer anisotropy for decreasing device sizes.

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Directory of Open Access Journals (Sweden)

Leilei Xu

2017-01-01

Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

Energy Technology Data Exchange (ETDEWEB)

Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K. [QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

2016-07-25

The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.

Electron spin for classical information processing: a brief survey of spin-based logic devices, gates and circuits

International Nuclear Information System (INIS)

Bandyopadhyay, Supriyo; Cahay, Marc

2009-01-01

In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information processing device invariably causes current flow and an associated dissipation. Replacing 'charge' with the 'spin' of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient 'green electronics'. This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation. (topical review)

High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device

International Nuclear Information System (INIS)

Bala Kumar, S; Jalil, M B A; Tan, S G; Liang, G-C

2009-01-01

We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.

Spin coated graphene films as the transparent electrode in organic photovoltaic devices

International Nuclear Information System (INIS)

Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

2011-01-01

Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

Spin wave absorber generated by artificial surface anisotropy for spin wave device network

Directory of Open Access Journals (Sweden)

Naoki Kanazawa

2016-09-01

Full Text Available Spin waves (SWs have the potential to reduce the electric energy loss in signal processing networks. The SWs called magnetostatic forward volume waves (MSFVWs are advantageous for networking due to their isotropic dispersion in the plane of a device. To control the MSFVW flow in a processing network based on yttrium iron garnet, we developed a SW absorber using artificial structures. The mechanical surface polishing method presented in this work can well control extrinsic damping without changing the SW dispersion of the host material. Furthermore, enhancement of the ferromagnetic resonance linewidth over 3 Oe was demonstrated.

Finite temperature simulation studies of spin-flop magnetic random access memory devices

International Nuclear Information System (INIS)

Chui, S.T.; Chang, C.-R.

2006-01-01

Spin-flop structures are currently being developed for magnetic random access memory devices. We report simulation studies of this system. We found the switching involves an intermediate edge-pinned domain state, similar to that observed in the single layer case. This switching scenario is quite different from that based on the coherent rotation picture. A significant temperature dependence of the switching field is observed. Our result suggests that the interplane coupling and thus the switching field has to be above a finite threshold for the spin-flop switching to be better than conventional switching methods

Effects of interface electric field on the magnetoresistance in spin devices

Energy Technology Data Exchange (ETDEWEB)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

Efficient Spin Injection into Semiconductor

International Nuclear Information System (INIS)

Nahid, M.A.I.

2010-06-01

Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

Science.gov (United States)

Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

2015-03-01

Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

Electron spin and nuclear spin manipulation in semiconductor nanosystems

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Yusa, Go; Sasaki, Satoshi

2006-01-01

Manipulations of electron spin and nuclear spin have been studied in AlGaAs/GaAs semiconductor nanosystems. Non-local manipulation of electron spins has been realized by using the correlation effect between localized and mobile electron spins in a quantum dot- quantum wire coupled system. Interaction between electron and nuclear spins was exploited to achieve a coherent control of nuclear spins in a semiconductor point contact device. Using this device, we have demonstrated a fully coherent manipulation of any two states among the four spin levels of Ga and As nuclei. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spin injection and spin accumulation in all-metal mesoscopic spin valves

NARCIS (Netherlands)

Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

2003-01-01

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

Energy Technology Data Exchange (ETDEWEB)

Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

2013-12-02

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

Science.gov (United States)

Caliskan, S; Laref, A

2014-07-14

Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

Zero-field precession and hysteretic threshold currents in a spin torque nano device with tilted polarizer

Energy Technology Data Exchange (ETDEWEB)

Zhou Yan; Bonetti, S; Zha, C L; Akerman, Johan [Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)], E-mail: zhouyan@kth.se

2009-10-15

Using nonlinear system theory and numerical simulations, we map out the static and dynamic phase diagrams in the zero applied field of a spin torque nano device with a tilted polarizer (TP). We find that for sufficiently large currents, even very small tilt angles ({beta}>1 deg.) will lead to steady free layer precession in zero field. Within a rather large range of tilt angles, 1 deg. <{beta}<19 deg., we find coexisting static states and hysteretic switching between these using only current. In a more narrow window (1 deg. <{beta}<5 deg.) one of the static states turns into a limit cycle (precession). The coexistence of current-driven static and dynamic states in the zero magnetic field is unique to the TP device and leads to large hysteresis in the upper and lower threshold currents for its operation. The nano device with TP can facilitate the generation of large amplitude mode of spin torque signals without the need for cumbersome magnetic field sources and thus should be very important for future telecommunication applications based on spin transfer torque effects.

Spin voltage generation through optical excitation of complementary spin populations

Science.gov (United States)

Bottegoni, Federico; Celebrano, Michele; Bollani, Monica; Biagioni, Paolo; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco

2014-08-01

By exploiting the spin degree of freedom of carriers inside electronic devices, spintronics has a huge potential for quantum computation and dissipationless interconnects. Pure spin currents in spintronic devices should be driven by a spin voltage generator, able to drive the spin distribution out of equilibrium without inducing charge currents. Ideally, such a generator should operate at room temperature, be highly integrable with existing semiconductor technology, and not interfere with other spintronic building blocks that make use of ferromagnetic materials. Here we demonstrate a device that matches these requirements by realizing the spintronic equivalent of a photovoltaic generator. Whereas a photovoltaic generator spatially separates photoexcited electrons and holes, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite in-plane spin projections. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). The resulting light diffraction pattern features a spatially modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

Science.gov (United States)

Graziosi, Patrizio; Neophytou, Neophytos

2018-02-01

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

Spin electronics

CERN Document Server

Buhrman, Robert; Daughton, James; Molnár, Stephan; Roukes, Michael

2004-01-01

This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterost...

Resonant Tunneling Spin Pump

Science.gov (United States)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Highly spin-polarized materials and devices for spintronics∗.

Science.gov (United States)

Inomata, Koichiro; Ikeda, Naomichi; Tezuka, Nobuki; Goto, Ryogo; Sugimoto, Satoshi; Wojcik, Marek; Jedryka, Eva

2008-01-01

The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD) using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co 2 Cr 1 - x Fe x Al (CCFA( x )) and Co 2 FeSi 1 - x Al x (CFSA( x )) and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co 2 FeSi 0.5 Al 0.5 (CFSA(0.5)) Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5) at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001) substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5) electrodes depends on the structure, and is significantly higher for L2 1 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe 2 film deposited on a MgO (001) single crystal substrate, wherein the spinel

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

Directory of Open Access Journals (Sweden)

Adrian Iovan

2012-12-01

Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

Comparação entre o método da gota pendente e o método da gota girante para medida da tensão interfacial entre polímeros Comparison between the pendant drop and spinning drop method to measure interfacial tension between polymers

Directory of Open Access Journals (Sweden)

Nicole R. Demarquette

1997-09-01

Full Text Available Dois instrumentos, um deles baseado no princípio da gota pendente e o outro baseado no método da gota girante, para medir a tensão interfacial entre polímeros, são apresentados e comparados aqui. Com ambos instrumentos foi possível visualizar a gota de polímero "on line". Os instrumentos mostraram-se complementares quanto às suas áreas de aplicação. O método da gota pendente deve ser usado quando as quantidades de polímero são limitadas ou quando o polímero mais denso é opaco. O método da gota girante deve ser usado quando a degradação térmica pode ser um problema ou quando o polímero menos denso é opaco.In this paper two apparatuses, one based on the principle of the pendant drop method and one based on the principle of the spinning drop are presented and compared. With both apparatuses it was possible to view the drop in real time and calculate the interfacial tension on-line. The two equipments were shown to be complementary in their use. The pendant drop method should be used when there are limited quantities of polymer and/or the denser polymer is opaque. The spinning drop method should be used when thermal degradation could be a problem and/or when the lighter polymer is opaque.

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

Science.gov (United States)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Spin injection and detection in lateral spin valves with hybrid interfaces

Science.gov (United States)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

KAUST Repository

Ortiz Pauyac, Christian

2016-06-19

In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

Spin Transfer Torque in Graphene

Science.gov (United States)

Lin, Chia-Ching; Chen, Zhihong

2014-03-01

Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Applications of a high temperature sessile drop device

Energy Technology Data Exchange (ETDEWEB)

Schwarz, B; Eisenmenger-Sittner, C [Vienna University of Technology, Insitute of Solid State Physics E-138, Wiedner Hauptstrasse 8-10, A-1040 Vienna (Austria); Worbs, P [Max-Planck-Institut fuer Plasmaphysik, Bereich Materialforschung, Boltzmannstrasse 2, D-85748 Garching (Germany)], E-mail: bernhard.schwarz@ifp.tuwien.ac.at

2008-03-01

The wettability of a liquid metal on a solid surface is of great technological interest for the industry (soldering, brazing, infiltration) as well as for fundamental research (diffusion, chemical reaction, intermetallic phases). The characterization of wetting is done by measuring the contact angle at the triple line of the liquid on the solid. A High Temperature Sessile Drop Device (HTSDD) was constructed and several applications were tested: (i) a wettability study of a copper-based brazing alloy (Cu-ABA) on TiN{sub x} coatings with different stoichiometries. The data derived from the HTSDD show that the reduction of the nitrogen content in the TiN coating reduces the time for reaching the final contact angle. Also for substoichiometric TiC a similar behaviour is predicted in literature. (ii) The liquid surface energy of molten metals can be estimated from the curvature of flattened droplets due to the influence of gravity. Two models were used for the calculation of the liquid surface energy of different liquid metals. (iii) From the droplet radius vs. time curves it is possible to distinguish between two different reactive wetting regimes - the diffusion and the reaction controlled reactive wetting. The beginning of this research topic will be discussed.

A controllable spin prism

International Nuclear Information System (INIS)

Hakioglu, T

2009-01-01

Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions are present and controlled by the plunger gate potential, the electric field and the barrier height. A totally destructive interference can be manipulated externally between the Rashba and Dresselhaus couplings. The spin-dependent transmission/reflection amplitudes are calculated as the control parameters are changed. The device operates as a spin prism/converter/filter in different regimes and may stimulate research in promising directions in spintronics in analogy with linear optics.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Science.gov (United States)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

Science.gov (United States)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

Directory of Open Access Journals (Sweden)

N. Liu

2017-12-01

Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

Metallic spintronic devices

CERN Document Server

Wang, Xiaobin

2014-01-01

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

Controlling Vapor Pressure In Hanging-Drop Crystallization

Science.gov (United States)

Carter, Daniel C.; Smith, Robbie

1988-01-01

Rate of evaporation adjusted to produce larger crystals. Device helps to control vapor pressure of water and other solvents in vicinity of hanging drop of solution containing dissolved enzyme protein. Well of porous frit (sintered glass) holds solution in proximity to drop of solution containing protein or enzyme. Vapor from solution in frit controls evaporation of solvent from drop to control precipitation of protein or enzyme. With device, rate of nucleation limited to decrease number and increase size (and perhaps quality) of crystals - large crystals of higher quality needed for x-ray diffraction studies of macromolecules.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Next generation spin torque memories

CERN Document Server

Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

2017-01-01

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

A programmable and portable NMES device for drop foot correction and blood flow assist applications.

Science.gov (United States)

Breen, Paul P; Corley, Gavin J; O'Keeffe, Derek T; Conway, Richard; Olaighin, Gearóid

2009-04-01

The Duo-STIM, a new, programmable and portable neuromuscular stimulation system for drop foot correction and blood flow assist applications is presented. The system consists of a programmer unit and a portable, programmable stimulator unit. The portable stimulator features fully programmable, sensor-controlled, constant-voltage, dual-channel stimulation and accommodates a range of customized stimulation profiles. Trapezoidal and free-form adaptive stimulation intensity envelope algorithms are provided for drop foot correction applications, while time dependent and activity dependent algorithms are provided for blood flow assist applications. A variety of sensor types can be used with the portable unit, including force sensitive resistor-based foot switches and MEMS-based accelerometer and gyroscope devices. The paper provides a detailed description of the hardware and block-level system design for both units. The programming and operating procedures for the system are also presented. Finally, functional bench test results for the system are presented.

Numerical simulation of a device with two spin crossover complexes: application for temperature and pressure sensors

Science.gov (United States)

Linares, Jorge; Eddine Allal, Salah; Dahoo, Pierre Richard; Garcia, Yann

2017-12-01

The spin-crossover (SCO) phenomenon is related to the ability of a transition metal to change its spin state vs. a given perturbation. For an iron(II) SCO complexes the reversible changes involve the diamagnetic low-spin (S = 0) and the paramagnetic high-spin (HS S = 2) states [1,2,3]. In this contribution we simulate the HS Fraction (nHS) for different set values of temperature and pressure for a device using two SCO complexes with weak elastic interactions. We improve the calculation given by Linares et al. [4], taking also into account different volume (VHS, VLS) changes of the SCO. We perform all the calculation in the frame work of an Ising-like model solved in the mean-field approximation. The two SCO show in the case of “weak elastic interactions”, gradual spin transitions such that both temperature and pressure values can be obtained from the optical observation in the light of calculations discussed in this article.

Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

Science.gov (United States)

Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

2018-04-24

Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

Energy Technology Data Exchange (ETDEWEB)

Lopez, Alexander; Medina, Ernesto [Centro de Fisica, Instituto Venezolano de Investigaciones CientIficas, Apartado 21874, Caracas 1020-A (Venezuela, Bolivarian Republic of); BolIvar, Nelson [Departamento de Fisica, Universidad Central de Venezuela, Caracas (Venezuela, Bolivarian Republic of); Berche, Bertrand [Statistical Physics Group, P2M, Institut Jean Lamour, Nancy Universite, BP70239, F-54506 Vandoeuvre les Nancy (France)

2010-03-24

A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

International Nuclear Information System (INIS)

Lopez, Alexander; Medina, Ernesto; BolIvar, Nelson; Berche, Bertrand

2010-01-01

A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

Science.gov (United States)

López, Alexander; Medina, Ernesto; Bolívar, Nelson; Berche, Bertrand

2010-03-01

A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

Enhanced magnetoresistance in graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

2017-05-01

Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

International Nuclear Information System (INIS)

Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

1996-01-01

Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)

Capillary Thinning of Particle-laden Drops

Science.gov (United States)

Wagoner, Brayden; Thete, Sumeet; Jahns, Matt; Doshi, Pankaj; Basaran, Osman

2015-11-01

Drop formation is central in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, a thinning filament is created between the about-to-form drop and the fluid hanging from the nozzle. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids. The thinning dynamics is, however, altered completely when the fluid contains particles, the physics of which is not well understood. In this work, we explore the impact of solid particles on filament thinning and drop formation by using a combination of experiments and numerical simulations.

Spin injection and transport in semiconductor and metal nanostructures

Science.gov (United States)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

Science.gov (United States)

Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

2003-05-01

Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

Bipolar spintronics: from spin injection to spin-controlled logic

International Nuclear Information System (INIS)

Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

2007-01-01

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

Spin injection into GaAs

Energy Technology Data Exchange (ETDEWEB)

Endres, Bernhard

2013-11-01

In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

Aging effect of spin accumulation in non-local spin valves

International Nuclear Information System (INIS)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng; Wang, Le; Xu, Xiaoguang; Jiang, Yong

2017-01-01

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Aging effect of spin accumulation in non-local spin valves

Energy Technology Data Exchange (ETDEWEB)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Le, E-mail: wangle@ruc.edu.cn [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, Xiaoguang, E-mail: xgxu@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Jiang, Yong [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

2017-06-15

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Spin injection into Pt-polymers with large spin-orbit coupling

Science.gov (United States)

Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

2014-03-01

Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

Spin-photon entangling diode

DEFF Research Database (Denmark)

Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

2007-01-01

We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

Spin-polarized transport properties of a pyridinium-based molecular spintronics device

Science.gov (United States)

Zhang, J.; Xu, B.; Qin, Z.

2018-05-01

By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based "radical-π-radical" molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.

Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices.

Science.gov (United States)

Eslamian, Morteza; Zabihi, Fatemeh

2015-12-01

A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

DropBot: An open-source digital microfluidic control system with precise control of electrostatic driving force and instantaneous drop velocity measurement

International Nuclear Information System (INIS)

Fobel, Ryan; Fobel, Christian; Wheeler, Aaron R.

2013-01-01

We introduce DropBot: an open-source instrument for digital microfluidics (http://microfluidics.utoronto.ca/dropbot). DropBot features two key functionalities for digital microfluidics: (1) real-time monitoring of instantaneous drop velocity (which we propose is a proxy for resistive forces), and (2) application of constant electrostatic driving forces through compensation for amplifier-loading and device capacitance. We anticipate that this system will enhance insight into failure modes and lead to new strategies for improved device reliability, and will be useful for the growing number of users who are adopting digital microfluidics for automated, miniaturized laboratory operation.

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Science.gov (United States)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Spin dependent disorder in a junction device with spin orbit couplings

International Nuclear Information System (INIS)

Ganguly, Sudin; Basu, Saurabh

2016-01-01

Using the multi-probe Landauer-BUttiker formula and Green's function approach, we calculate the longitudinal conductance (LC) and spin Hall conductance (SHC) numerically in a two-dimensional junction system with the Rashba and Dresselhaus spin orbit coupling (SOC) and spin dependent disorder (SDD) in presence of both random onsite and hopping disorder strengths. It has been found that when the strengths of the RSOC and DSOC are same, the SHC vanishes. Further in presence of random onsite or hopping disorder, the SHC is still zero when the strengths of the two types of SOC, that is Rashba and Dressselhaus are the same. This indicates that the cancellation of SHC is robust even in the presence of random disorder. Only with the inclusion of SDD (onsite or hopping), a non-zero SHC is found and it increases as the strength of SDD increases. The physical implication of the existence of a non-zero SHC has been explored in this work. Finally, we have compared the effect of onsite SDD and hopping SDD on both longitudinal and spin Hall conductances. (paper)

Spin transport in epitaxial graphene

Science.gov (United States)

Tbd, -

2014-03-01

Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Semiconductors put spin in spintronics

International Nuclear Information System (INIS)

Weiss, Dieter

2000-01-01

Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

Topical review: spins and mechanics in diamond

Science.gov (United States)

Lee, Donghun; Lee, Kenneth W.; Cady, Jeffrey V.; Ovartchaiyapong, Preeti; Bleszynski Jayich, Ania C.

2017-03-01

There has been rapidly growing interest in hybrid quantum devices involving a solid-state spin and a macroscopic mechanical oscillator. Such hybrid devices create exciting opportunities to mediate interactions between disparate quantum bits (qubits) and to explore the quantum regime of macroscopic mechanical objects. In particular, a system consisting of the nitrogen-vacancy defect center (NV center) in diamond coupled to a high-quality-factor mechanical oscillator is an appealing candidate for such a hybrid quantum device, as it utilizes the highly coherent and versatile spin properties of the defect center. In this paper, we will review recent experimental progress on diamond-based hybrid quantum devices in which the spin and orbital dynamics of single defects are driven by the motion of a mechanical oscillator. In addition, we discuss prospective applications for this device, including long-range, phonon-mediated spin-spin interactions, and phonon cooling in the quantum regime. We conclude the review by evaluating the experimental limitations of current devices and identifying alternative device architectures that may reach the strong coupling regime.

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

International Nuclear Information System (INIS)

Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

2014-01-01

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

2014-01-05

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

Directory of Open Access Journals (Sweden)

G. A. Nemnes

2012-01-01

Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

Spin-current emission governed by nonlinear spin dynamics.

Science.gov (United States)

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Resonant Spin-Transfer-Torque Nano-Oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2017-12-01

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

Directory of Open Access Journals (Sweden)

Diana C. Leitao

2015-12-01

Full Text Available Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm 2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

Science.gov (United States)

Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

2018-06-01

We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

Spin lattices of walking droplets

Science.gov (United States)

Saenz, Pedro; Pucci, Giuseppe; Goujon, Alexis; Dunkel, Jorn; Bush, John

2017-11-01

We present the results of an experimental investigation of the spontaneous emergence of collective behavior in spin lattice of droplets walking on a vibrating fluid bath. The bottom topography consists of relatively deep circular wells that encourage the walking droplets to follow circular trajectories centered at the lattice sites, in one direction or the other. Wave-mediated interactions between neighboring drops are enabled through a thin fluid layer between the wells. The sense of rotation of the walking droplets may thus become globally coupled. When the coupling is sufficiently strong, interactions with neighboring droplets may result in switches in spin that lead to preferred global arrangements, including correlated (all drops rotating in the same direction) or anti-correlated (neighboring drops rotating in opposite directions) states. Analogies with ferromagnetism and anti-ferromagnetism are drawn. Different spatial arrangements are presented in 1D and 2D lattices to illustrate the effects of topological frustration. This work was supported by the US National Science Foundation through Grants CMMI-1333242 and DMS-1614043.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Anisotropic spin relaxation in graphene

NARCIS (Netherlands)

Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

2008-01-01

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

International Nuclear Information System (INIS)

Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Tanamoto, T.; Saito, Y.; Hamaya, K.; Tezuka, N.

2013-01-01

We study in detail how the bias voltage (V bias ) and interface resistance (RA) depend on the magnitude of spin accumulation signals (|ΔV| or |ΔV|/I, where I is current) as detected by three-terminal Hanle measurements in CoFe/MgO/Si on insulator (SOI) devices with various MgO layer thicknesses and SOI carrier densities. We find the apparent maximum magnitude of spin polarization as a function of V bias and the correlation between the magnitude of spin accumulation signals and the shape of differential conductance (dI/dV) curves within the framework of the standard spin diffusion model. All of the experimental results can be explained by taking into account the density of states (DOS) in CoFe under the influence of the applied V bias and the quality of MgO tunnel barrier. These results indicate that it is important to consider the DOS of the ferromagnetic materials under the influence of an applied V bias and the quality of tunnel barrier when observing large spin accumulation signals in Si

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Nanosized perpendicular organic spin-valves

Energy Technology Data Exchange (ETDEWEB)

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)

2015-03-09

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

Science.gov (United States)

Wang, Jian-Ping

An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin-orbit coupling

Science.gov (United States)

Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Newrock, Richard S.; Cahay, Marc; Herbert, Stephen T.

2013-03-01

Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta-Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin-orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin-orbit coupling and a strong e-e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. Keynote talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Simulating realistic implementations of spin field effect transistor

Science.gov (United States)

Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

2011-04-01

The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

Experimental Realization of a Quantum Spin Pump

DEFF Research Database (Denmark)

Watson, Susan; Potok, R.; M. Marcus, C.

2003-01-01

We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin-dependent by the a......We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin......-dependent by the application of an in-plane Zeeman field. Spin currents are measured by placing the pump in a focusing geometry with a spin-selective collector....

Spin Orbit Torque in Ferromagnetic Semiconductors

KAUST Repository

Li, Hang

2016-01-01

Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can

Cavity optomechanics in a levitated helium drop

Science.gov (United States)

Childress, L.; Schmidt, M. P.; Kashkanova, A. D.; Brown, C. D.; Harris, G. I.; Aiello, A.; Marquardt, F.; Harris, J. G. E.

2017-12-01

We describe a proposal for a type of optomechanical system based on a drop of liquid helium that is magnetically levitated in vacuum. In the proposed device, the drop would serve three roles: its optical whispering-gallery modes would provide the optical cavity, its surface vibrations would constitute the mechanical element, and evaporation of He atoms from its surface would provide continuous refrigeration. We analyze the feasibility of such a system in light of previous experimental demonstrations of its essential components: magnetic levitation of mm-scale and cm-scale drops of liquid He , evaporative cooling of He droplets in vacuum, and coupling to high-quality optical whispering-gallery modes in a wide range of liquids. We find that the combination of these features could result in a device that approaches the single-photon strong-coupling regime, due to the high optical quality factors attainable at low temperatures. Moreover, the system offers a unique opportunity to use optical techniques to study the motion of a superfluid that is freely levitating in vacuum (in the case of 4He). Alternatively, for a normal fluid drop of 3He, we propose to exploit the coupling between the drop's rotations and vibrations to perform quantum nondemolition measurements of angular momentum.

Electronic readout of a single nuclear spin using a molecular spin transistor

Science.gov (United States)

Vincent, R.; Klyastskaya, S.; Ruben, M.; Wernsdorfer, W.; Balestro, F.

2012-02-01

Quantum control of individual spins in condensed matter devices is an emerging field with a wide range of applications ranging from nanospintronics to quantum computing [1,2]. The electron, with its spin and orbital degrees of freedom, is conventionally used as carrier of the quantum information in the devices proposed so far. However, electrons exhibit a strong coupling to the environment leading to reduced relaxation and coherence times. Indeed quantum coherence and stable entanglement of electron spins are extremely difficult to achieve. We propose a new approach using the nuclear spin of an individual metal atom embedded in a single-molecule magnet (SMM). In order to perform the readout of the nuclear spin, the quantum tunneling of the magnetization (QTM) of the magnetic moment of the SMM in a transitor-like set-up is electronically detected. Long spin lifetimes of an individual nuclear spin were observed and the relaxation characteristics were studied. The manipulation of the nuclear spin state of individual atoms embedded in magnetic molecules opens a completely new world, where quantum logic may be integrated.[4pt] [1] L. Bogani, W. Wernsdorfer, Nature Mat. 7, 179 (2008).[0pt] [2] M. Urdampilleta, S. Klyatskaya, J.P. Cleuziou, M. Ruben, W. Wernsdorfer, Nature Mat. 10, 502 (2011).

Perspectives of using spin waves for computing and signal processing

Energy Technology Data Exchange (ETDEWEB)

Csaba, György, E-mail: gcsaba@gmail.com [Center for Nano Science and Technology, University of Notre Dame (United States); Faculty for Information Technology and Bionics, Pázmány Péter Catholic University (Hungary); Papp, Ádám [Center for Nano Science and Technology, University of Notre Dame (United States); Faculty for Information Technology and Bionics, Pázmány Péter Catholic University (Hungary); Porod, Wolfgang [Center for Nano Science and Technology, University of Notre Dame (United States)

2017-05-03

Highlights: • We give an overview of spin wave-based computing with emphasis on non-Boolean signal processors. • Spin waves can combine the best of electronics and photonics and do it in an on-chip and integrable way. • Copying successful approaches from microelectronics may not be the best way toward spin-wave based computing. • Practical devices can be constructed by minimizing the number of required magneto-electric interconnections. - Abstract: Almost all the world's information is processed and transmitted by either electric currents or photons. Now they may get a serious contender: spin-wave-based devices may just perform some information-processing tasks in a lot more efficient and practical way. In this article, we give an engineering perspective of the potential of spin-wave-based devices. After reviewing various flavors for spin-wave-based processing devices, we argue that the niche for spin-wave-based devices is low-power, compact and high-speed signal-processing devices, where most traditional electronics show poor performance.

Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

Energy Technology Data Exchange (ETDEWEB)

Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

2016-12-30

Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

Spin Filters as High-Performance Spin Polarimeters

International Nuclear Information System (INIS)

Rougemaille, N.; Lampel, G.; Peretti, J.; Drouhin, H.-J.; Lassailly, Y.; Filipe, A.; Wirth, T.; Schuhl, A.

2003-01-01

A spin-dependent transport experiment in which hot electrons pass through a ferromagnetic metal / semiconductor Schottky diode has been performed. A spin-polarized free-electron beam, emitted in vacuum from a GaAs photocathode, is injected into the thin metal layer with an energy between 5 and 1000 eV above to the Fermi level. The transmitted current collected in the semiconductor substrate increases with injection energy because of secondary - electron multiplication. The spin-dependent part of the transmitted current is first constant up to about 100 eV and then increases by 4 orders of magnitude. As an immediate application, the solid-state hybrid structure studied here leads to a very efficient and compact device for spin polarization detection

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier

Directory of Open Access Journals (Sweden)

Somaieh Ahmadi

2012-03-01

Full Text Available Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices.

Antiresonance induced spin-polarized current generation

Science.gov (United States)

Yin, Sun; Min, Wen-Jing; Gao, Kun; Xie, Shi-Jie; Liu, De-Sheng

2011-12-01

According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

A device for pre-separating water-drops in a two-phase flow

International Nuclear Information System (INIS)

Andro, Jean; Peyrelongue, J.-P.

1974-01-01

The invention relates to the mechanical pre-separation of water-drops in suspension in a flow of saturated steam. To this end, the method comprises the steps of carrying out rough separations by directing the flow towards curved surfaces adapted to deflect that flow and to project the drops onto said surfaces, sucking the film formed by the water-drops displaced by centrifugal force on the outer periphery of said surfaces, directing the steam separated from the water-drops onto five separators so as to extract dry steam and discharging the water provided by the sucking of said surfaces and the five separators. The invention applies to the drying of steam issuing from the high-pressure bodies of nuclear steam-turbines [fr

Spin Orbit Torque in Ferromagnetic Semiconductors

KAUST Repository

Li, Hang

2016-06-21

Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices

International Nuclear Information System (INIS)

Hu, Jiaxi; Haratipour, Nazila; Koester, Steven J.

2015-01-01

All-spin logic (ASL) is a novel approach for digital logic applications wherein spin is used as the state variable instead of charge. One of the challenges in realizing a practical ASL system is the need to ensure non-reciprocity, meaning the information flows from input to output, not vice versa. One approach described previously, is to introduce an asymmetric ground contact, and while this approach was shown to be effective, it remains unclear as to the optimal approach for achieving non-reciprocity in ASL. In this study, we quantitatively analyze techniques to achieve non-reciprocity in ASL devices, and we specifically compare the effect of using asymmetric ground position and dipole-coupled output/input isolation. For this analysis, we simulate the switching dynamics of multiple-stage logic devices with FePt and FePd perpendicular magnetic anisotropy materials using a combination of a matrix-based spin circuit model coupled to the Landau–Lifshitz–Gilbert equation. The dipole field is included in this model and can act as both a desirable means of coupling magnets and a source of noise. The dynamic energy consumption has been calculated for these schemes, as a function of input/output magnet separation, and the results show that using a scheme that electrically isolates logic stages produces superior non-reciprocity, thus allowing both improved scaling and reduced energy consumption

The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices

Energy Technology Data Exchange (ETDEWEB)

Hu, Jiaxi; Haratipour, Nazila; Koester, Steven J., E-mail: skoester@umn.edu [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, 200 Union St. SE, Minneapolis, Minnesota 55455 (United States)

2015-05-07

All-spin logic (ASL) is a novel approach for digital logic applications wherein spin is used as the state variable instead of charge. One of the challenges in realizing a practical ASL system is the need to ensure non-reciprocity, meaning the information flows from input to output, not vice versa. One approach described previously, is to introduce an asymmetric ground contact, and while this approach was shown to be effective, it remains unclear as to the optimal approach for achieving non-reciprocity in ASL. In this study, we quantitatively analyze techniques to achieve non-reciprocity in ASL devices, and we specifically compare the effect of using asymmetric ground position and dipole-coupled output/input isolation. For this analysis, we simulate the switching dynamics of multiple-stage logic devices with FePt and FePd perpendicular magnetic anisotropy materials using a combination of a matrix-based spin circuit model coupled to the Landau–Lifshitz–Gilbert equation. The dipole field is included in this model and can act as both a desirable means of coupling magnets and a source of noise. The dynamic energy consumption has been calculated for these schemes, as a function of input/output magnet separation, and the results show that using a scheme that electrically isolates logic stages produces superior non-reciprocity, thus allowing both improved scaling and reduced energy consumption.

Hybrid spin-nanomechanics with single spins in diamond mechanical oscillators

OpenAIRE

Barfuss, Arne

2017-01-01

Hybrid spin-oscillator systems, formed by single spins coupled to mechanical oscillators, have attracted ever-increasing attention over the past few years, triggered largely by the prospect of employing such devices as high-performance nanoscale sensors or transducers in multi-qubit networks. Provided the spin-oscillator coupling is strong and robust, such systems can even serve as test-beds for studying macroscopic objects in the quantum regime. In this thesis we present a novel hybrid sp...

On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

Directory of Open Access Journals (Sweden)

A.A. Baker

Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Excitation of coherent propagating spin waves by pure spin currents.

Science.gov (United States)

Demidov, Vladislav E; Urazhdin, Sergei; Liu, Ronghua; Divinskiy, Boris; Telegin, Andrey; Demokritov, Sergej O

2016-01-28

Utilization of pure spin currents not accompanied by the flow of electrical charge provides unprecedented opportunities for the emerging technologies based on the electron's spin degree of freedom, such as spintronics and magnonics. It was recently shown that pure spin currents can be used to excite coherent magnetization dynamics in magnetic nanostructures. However, because of the intrinsic nonlinear self-localization effects, magnetic auto-oscillations in the demonstrated devices were spatially confined, preventing their applications as sources of propagating spin waves in magnonic circuits using these waves as signal carriers. Here, we experimentally demonstrate efficient excitation and directional propagation of coherent spin waves generated by pure spin current. We show that this can be achieved by using the nonlocal spin injection mechanism, which enables flexible design of magnetic nanosystems and allows one to efficiently control their dynamic characteristics.

Charge-induced spin torque in Weyl semimetals

Science.gov (United States)

Kurebayashi, Daichi; Nomura, Kentaro

In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

Science.gov (United States)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Demonstration of a robust magnonic spin wave interferometer.

Science.gov (United States)

Kanazawa, Naoki; Goto, Taichi; Sekiguchi, Koji; Granovsky, Alexander B; Ross, Caroline A; Takagi, Hiroyuki; Nakamura, Yuichi; Inoue, Mitsuteru

2016-07-22

Magnonics is an emerging field dealing with ultralow power consumption logic circuits, in which the flow of spin waves, rather than electric charges, transmits and processes information. Waves, including spin waves, excel at encoding information via their phase using interference. This enables a number of inputs to be processed in one device, which offers the promise of multi-input multi-output logic gates. To realize such an integrated device, it is essential to demonstrate spin wave interferometers using spatially isotropic spin waves with high operational stability. However, spin wave reflection at the waveguide edge has previously limited the stability of interfering waves, precluding the use of isotropic spin waves, i.e., forward volume waves. Here, a spin wave absorber is demonstrated comprising a yttrium iron garnet waveguide partially covered by gold. This device is shown experimentally to be a robust spin wave interferometer using the forward volume mode, with a large ON/OFF isolation value of 13.7 dB even in magnetic fields over 30 Oe.

Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

Energy Technology Data Exchange (ETDEWEB)

Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

2012-01-01

New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

Circuit Simulation of All-Spin Logic

KAUST Repository

Alawein, Meshal

2016-05-01

With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall

Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

KAUST Repository

Li, Peng

2016-06-01

In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Active structuring of colloidal armour on liquid drops

Science.gov (United States)

Dommersnes, Paul; Rozynek, Zbigniew; Mikkelsen, Alexander; Castberg, Rene; Kjerstad, Knut; Hersvik, Kjetil; Otto Fossum, Jon

2013-06-01

Adsorption and assembly of colloidal particles at the surface of liquid droplets are at the base of particle-stabilized emulsions and templating. Here we report that electrohydrodynamic and electro-rheological effects in leaky-dielectric liquid drops can be used to structure and dynamically control colloidal particle assemblies at drop surfaces, including electric-field-assisted convective assembly of jammed colloidal ‘ribbons’, electro-rheological colloidal chains confined to a two-dimensional surface and spinning colloidal domains on that surface. In addition, we demonstrate the size control of ‘pupil’-like openings in colloidal shells. We anticipate that electric field manipulation of colloids in leaky dielectrics can lead to new routes of colloidosome assembly and design for ‘smart armoured’ droplets.

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

Science.gov (United States)

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

Science.gov (United States)

Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

2014-10-22

An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

Beam Splitter for Spin Waves in Quantum Spin Network

OpenAIRE

Yang, S.; Song, Z.; Sun, C. P.

2005-01-01

We theoretically design and analytically study a controllable beam splitter for the spin wave propagating in a star-shaped (e.g., a $Y$-shaped beam) spin network. Such a solid state beam splitter can display quantum interference and quantum entanglement by the well-aimed controls of interaction on nodes. It will enable an elementary interferometric device for scalable quantum information processing based on the solid system.

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

KAUST Repository

Bhansali, Unnat Sampatraj

2013-05-01

Drop-on-demand piezoelectric inkjet-printing technique has been used to fabricate a functional cross-bar array of all-organic ferroelectric memory devices. The polymer-ferroelectric-polymer device consists of a ferroelectric copolymer P(VDF-TrFE) film sandwiched between inkjet-patterned, continuous, orthogonal lines of PEDOT:PSS polymer as the bottom and top electrodes. These devices exhibit well-saturated hysteresis curves with a maximum remnant polarization (Pr) = 6.7 μC/cm2, coercive field (E c) = 55 MV/m and a peak capacitance density of 45 nF/cm2. Our polarization fatigue measurements show that these devices retain ∼100% and 45% of their initial Pr values after 103 and 10 5 stress cycles, respectively. The overall performance and polarization retention characteristics of these ferroelectric capacitors with inkjet-printed polymer electrodes are comparable to metal and spin-cast polymer electrodes suggesting their potential use in large-area flexible electronics. © 2013 Elsevier Ltd. All rights reserved.

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Spin tunneling and manipulation in nanostructures.

Science.gov (United States)

Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

2012-09-01

The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

DROpS: an object of learning in computer simulation of discrete events

Directory of Open Access Journals (Sweden)

Hugo Alves Silva Ribeiro

2015-09-01

Full Text Available This work presents the “Realistic Dynamics Of Simulated Operations” (DROpS, the name given to the dynamics using the “dropper” device as an object of teaching and learning. The objective is to present alternatives for professors teaching content related to simulation of discrete events to graduate students in production engineering. The aim is to enable students to develop skills related to data collection, modeling, statistical analysis, and interpretation of results. This dynamic has been developed and applied to the students by placing them in a situation analogous to a real industry, where various concepts related to computer simulation were discussed, allowing the students to put these concepts into practice in an interactive manner, thus facilitating learning

Flexible semi-transparent organic spin valve based on bathocuproine

International Nuclear Information System (INIS)

Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

Oxide materials for spintronic device applications

Science.gov (United States)

Prestgard, Megan Campbell

Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for

Spins Dynamics in a Dissipative Environment: Hierarchal Equations of Motion Approach Using a Graphics Processing Unit (GPU).

Science.gov (United States)

Tsuchimoto, Masashi; Tanimura, Yoshitaka

2015-08-11

A system with many energy states coupled to a harmonic oscillator bath is considered. To study quantum non-Markovian system-bath dynamics numerically rigorously and nonperturbatively, we developed a computer code for the reduced hierarchy equations of motion (HEOM) for a graphics processor unit (GPU) that can treat the system as large as 4096 energy states. The code employs a Padé spectrum decomposition (PSD) for a construction of HEOM and the exponential integrators. Dynamics of a quantum spin glass system are studied by calculating the free induction decay signal for the cases of 3 × 2 to 3 × 4 triangular lattices with antiferromagnetic interactions. We found that spins relax faster at lower temperature due to transitions through a quantum coherent state, as represented by the off-diagonal elements of the reduced density matrix, while it has been known that the spins relax slower due to suppression of thermal activation in a classical case. The decay of the spins are qualitatively similar regardless of the lattice sizes. The pathway of spin relaxation is analyzed under a sudden temperature drop condition. The Compute Unified Device Architecture (CUDA) based source code used in the present calculations is provided as Supporting Information .

A graphene spin diode based on Rashba SOI

International Nuclear Information System (INIS)

Mohammadpour, Hakimeh

2015-01-01

In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.; Wan, C.H., E-mail: wancaihua@iphy.ac.cn; Yuan, Z.H.; Fang, C.; Kong, W.J.; Wu, H.; Zhang, Q.T.; Tao, B.S.; Han, X.F., E-mail: xfhan@iphy.ac.cn

2017-04-15

Confronting with the gigantic volume of data produced every day, raising integration density by reducing the size of devices becomes harder and harder to meet the ever-increasing demand for high-performance computers. One feasible path is to actualize more logic functions in one cell. In this respect, we experimentally demonstrate a prototype spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR). The cell can be easily programmed and reprogrammed to perform desired function. Furthermore, the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells. This work provides a prospective example of multi-functional spin logic cell with reprogrammability and nonvolatility, which will advance the application of spin logic devices. - Highlights: • Experimental demonstration of spin logic cell based on spin Hall effect. • Five logic functions are realized in a single logic cell. • The logic cell is reprogrammable. • Information in the cell is symmetry-protected. • The logic cell can be easily expanded to logic gate array.

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

International Nuclear Information System (INIS)

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

2010-01-01

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

Science.gov (United States)

McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

2010-12-01

Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2014-01-01

We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni80Fe20/Cu/Ni80Fe20 nanopillar spin valve device subjected to either an electrical or a

Electrical control of single hole spins in nanowire quantum dots.

Science.gov (United States)

Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

2013-03-01

The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Ordered alternating binary polymer nanodroplet array by sequential spin dewetting.

Science.gov (United States)

Bhandaru, Nandini; Das, Anuja; Salunke, Namrata; Mukherjee, Rabibrata

2014-12-10

We report a facile technique for fabricating an ordered array of nearly equal-sized mesoscale polymer droplets of two constituent polymers (polystyrene, PS and poly(methyl methacrylate), PMMA) arranged in an alternating manner on a topographically patterned substrate. The self-organized array of binary polymers is realized by sequential spin dewetting. First, a dilute solution of PMMA is spin-dewetted on a patterned substrate, resulting in an array of isolated PMMA droplets arranged along the substrate grooves due to self-organization during spin coating itself. The sample is then silanized with octadecyltrichlorosilane (OTS), and subsequently, a dilute solution of PS is spin-coated on to it, which also undergoes spin dewetting. The spin-dewetted PS drops having a size nearly equal to the pre-existing PMMA droplets position themselves between two adjacent PMMA drops under appropriate conditions, forming an alternating binary polymer droplet array. The alternating array formation takes place for a narrow range of solution concentration for both the polymers and depends on the geometry of the substrate. The size of the droplets depends on the extent of confinement, and droplets as small as 100 nm can be obtained by this method, on a suitable template. The findings open up the possibility of creating novel surfaces having ordered multimaterial domains with a potential multifunctional capability.

Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

International Nuclear Information System (INIS)

Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

2008-01-01

We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

Science.gov (United States)

Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

2017-11-01

The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

Spin polarisation with electron Bessel beams

Energy Technology Data Exchange (ETDEWEB)

Schattschneider, P., E-mail: schattschneider@ifp.tuwien.ac.at [Institut für Festkörperphysik, Technische Universität Wien, A-1040 Wien (Austria); USTEM, Technische Universität Wien, A-1040 Wien (Austria); Grillo, V. [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy); Aubry, D. [Centrale Supelec, MSSMast CNRS 8579, F-92295 Châtenay-Malabry (France)

2017-05-15

The theoretical possibility to use an electron microscope as a spin polarizer is studied. It turns out that a Bessel beam passing a standard magnetic objective lens is intrinsically spin polarized when post-selected on-axis. In the limit of infinitely small detectors, the spin polarisation tends to 100 %. Increasing the detector size, the polarisation decreases rapidly, dropping below 10{sup −4} for standard settings of medium voltage microscopes. For extremely low voltages, the Figure of Merit increases by two orders of magnitude, approaching that of existing Mott detectors. Our findings may lead to new desings of spin filters, an attractive option in view of its inherent combination with the electron microscope, especially at low voltage. - Highlights: • TEM round magnetic lenses can act as spin polarizers when a Bessel beam is sent through. • This is found on theoretical grounds and demonstrated numerically for a few cases. • The effect is small, but can reach a Figure of Merit similar to existing Mott detectors. • This opens the possibility to construct nanometer-sized spin filters or detectors.

Quantum spin transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph

2012-05-15

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Quantum spin transport in semiconductor nanostructures

International Nuclear Information System (INIS)

Schindler, Christoph

2012-01-01

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

Science.gov (United States)

Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

2014-09-01

Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

Science.gov (United States)

Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

DEFF Research Database (Denmark)

Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

1974-01-01

Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

A white beam neutron spin splitter

International Nuclear Information System (INIS)

Krist, T.; Klose, F.; Felcher, G.P.

1997-01-01

The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co 0.11 Fe 0.89 supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 angstrom -1 , whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths

A white beam neutron spin splitter

Energy Technology Data Exchange (ETDEWEB)

Krist, T. [Hahn Meitner Institute, Berlin (Germany); Klose, F.; Felcher, G.P. [Argonne National Lab., IL (United States)

1997-07-23

The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co{sub 0.11} Fe{sub 0.89} supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 {angstrom}{sup -1}, whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths.

Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

International Nuclear Information System (INIS)

Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.

2016-01-01

We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

A CMOS silicon spin qubit

Science.gov (United States)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Vanishing current hysteresis under competing nuclear spin pumping processes in a quadruplet spin-blockaded double quantum dot

Energy Technology Data Exchange (ETDEWEB)

Amaha, S., E-mail: s-amaha@riken.jp [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Hatano, T. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Department of Physics, Tohoku University, Sendai-shi, Miyagi 980-8578 (Japan); Tarucha, S. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Gupta, J. A.; Austing, D. G. [National Research Council of Canada, M50, Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

2015-04-27

We investigate nuclear spin pumping with five-electron quadruplet spin states in a spin-blockaded weakly coupled vertical double quantum dot device. Two types of hysteretic steps in the leakage current are observed on sweeping the magnetic field and are associated with bidirectional polarization of nuclear spin. Properties of the steps are understood in terms of bias-voltage-dependent conditions for the mixing of quadruplet and doublet spin states by the hyperfine interaction. The hysteretic steps vanish when up- and down-nuclear spin pumping processes are in close competition.

How to control spin-Seebeck current in a metal-quantum dot-magnetic insulator junction

Science.gov (United States)

Fu, Hua-Hua; Gu, Lei; Wu, Ruqian

The control of the spin-Seebeck current is still a challenging task for the development of spin caloritronic devices. Here, we construct a spin-Seebeck device by inserting a quantum dot (QD) between the metal lead and magnetic insulator. Using the slave-particle approach and noncrossing approximation, we find that the spin-Seebeck effect increases significantly when the energy level of the QD locates near the Fermi level of the metal lead due to the enhancement of spin flipping and occurrences of quantum resonance. Since this can be easily realized by applying a gate voltage in experiments, the spin-Seebeck device proposed here can also work as a thermovoltaic transistor. Moreover, the optimal correlation strength and the energy level position of the QD are discussed to maximize the spin-Seebeck current as required for applications in controllable spin caloritronic devices.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

All-electric spin modulator based on a two-dimensional topological insulator

Energy Technology Data Exchange (ETDEWEB)

Xiao, Xianbo; Ai, Guoping [School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China); Liu, Ying; Yang, Shengyuan A., E-mail: shengyuan-yang@sutd.edu.sg [Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372 (Singapore); Liu, Zhengfang [School of Science, East China Jiaotong University, Nanchang 330013 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081 (China)

2016-01-18

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a non-magnetic material.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

Science.gov (United States)

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

A switchable spin-wave signal splitter for magnonic networks

Science.gov (United States)

Heussner, F.; Serga, A. A.; Brächer, T.; Hillebrands, B.; Pirro, P.

2017-09-01

The influence of an inhomogeneous magnetization distribution on the propagation of caustic-like spin-wave beams in unpatterned magnetic films has been investigated by utilizing micromagnetic simulations. Our study reveals a locally controllable and reconfigurable tractability of the beam directions. This feature is used to design a device combining split and switch functionalities for spin-wave signals on the micrometer scale. A coherent transmission of spin-wave signals through the device is verified. This attests the applicability in magnonic networks where the information is encoded in the phase of the spin waves.

Assisted Writing in Spin Transfer Torque Magnetic Tunnel Junctions

Science.gov (United States)

Ganguly, Samiran; Ahmed, Zeeshan; Datta, Supriyo; Marinero, Ernesto E.

2015-03-01

Spin transfer torque driven MRAM devices are now in an advanced state of development, and the importance of reducing the current requirement for writing information is well recognized. Different approaches to assist the writing process have been proposed such as spin orbit torque, spin Hall effect, voltage controlled magnetic anisotropy and thermal excitation. In this work,we report on our comparative study using the Spin-Circuit Approach regarding the total energy, the switching speed and energy-delay products for different assisted writing approaches in STT-MTJ devices using PMA magnets.

Material Targets for Scaling All-Spin Logic

Science.gov (United States)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2016-01-01

All-spin-logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to nonvolatility, ultralow operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin-logic devices that can surpass the energy-delay performance of CMOS transistors. With validated stochastic nanomagnetic and vector spin-transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identify promising directions for material engineering and discovery focusing on the systematic scaling of magnetic anisotropy (Hk ) and saturation magnetization (Ms ), the use of perpendicular magnetic anisotropy, and the interface spin-mixing conductance of the ferromagnet-spin-channel interface (Gmix ). We provide systematic targets for scaling a spin-logic energy-delay product toward 2 aJ ns, comprehending the stochastic noise for nanomagnets.

Spin crossover and high spin filtering behavior in Co-Pyridine and Co-Pyrimidine molecules

Science.gov (United States)

Wen, Zhongqian; Zhou, Liping; Cheng, Jue-Fei; Li, Shu-Jin; You, Wen-Long; Wang, Xuefeng

2018-03-01

We present a theoretical study on a series of cobalt complexes, which are constructed with cobalt atoms and pyridine/pyrimidine rings, using density functional theory. We investigate the structural and electric transport properties of spin crossover (SCO) Co complex with two spin states, namely low-spin configuration [LS] and high-spin configuration [HS]. Energy analyses of the two spin states imply that the SCO Co-Pyridine2 and Co-Pyrimidine2 complexes may display a spin transition process accompanied by a geometric modification driven by external stimuli. A nearly perfect spin filtering effect is observed in the Co-Pyrimidine2 complex with [HS] state. In addition, we also discover the contact-dependent transmission properties of Co-Pyridine2. These findings indicate that SCO Co complexes are promising materials for molecular spintronic devices.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Electrostatic charging and levitation of helium II drops

International Nuclear Information System (INIS)

Niemela, J.J.

1997-01-01

Liquid Helium II drops, of diameter 1 mm or less, are charged with positive helium ions and subsequently levitated by static electric fields. Stable levitation was achieved for drops of order 100-150 micrometers in diameter. The suspended drops could be translated to arbitrary positions within the levitator using additional superimposed DC electric fields, and also could be made to oscillate stably about their average positions by means of an applied time-varying electric field. A weak corona discharge was used to produce the necessary ions for levitation. A novel superfluid film flow device, developed for the controlled deployment of large charged drops, is described. Also discussed is an adjustable electric fountain that requires only a field emission tip operating at modest potentials, and works in both Helium I and Helium II

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Tuning spin-polarized transport in organic semiconductors

Science.gov (United States)

Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

Spin-neurons: A possible path to energy-efficient neuromorphic computers

Energy Technology Data Exchange (ETDEWEB)

Sharad, Mrigank; Fan, Deliang; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2013-12-21

Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work, we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage, and high-speed magnetization switching in nano-scale magnetic devices. Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and “thresholding” operation of an artificial neuron with high energy-efficiency. Comparison with CMOS-based analog circuit-model of a neuron shows that “spin-neurons” (spin based circuit model of neurons) can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin-neurons can therefore be an attractive option for neuromorphic computers of future.

Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry

Science.gov (United States)

2016-01-01

Conspectus Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to �

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Science.gov (United States)

Szulczewski, Greg

2012-01-01

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Magnetoresistance in RCo2 spin-fluctuation systems

International Nuclear Information System (INIS)

Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

2004-01-01

The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

Direct observation of the spin-dependent Peltier effect.

Science.gov (United States)

Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J

2012-02-05

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

Science.gov (United States)

Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

2017-11-09

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

Injection and detection of a spin-polarized current in a light-emitting diode

Science.gov (United States)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Shot noise of spin current and spin transfer torque

Science.gov (United States)

Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

2013-04-01

We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

Science.gov (United States)

2017-11-09

Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene Report Term: 0-Other Email ...Principal: Y Name: Jay A Gupta Email : gupta.208@osu.edu Name: Roland K Kawakami Email : kawakami.15@osu.edu RPPR Final Report as of 13-Nov-2017...studies on films and devices. Optimization of the Cr tip will be the next important step to establish this technique. We are writing up these early

A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

OpenAIRE

Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

2009-01-01

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

Graphene: A membrane with steadily improving charge and spin transport properties

Science.gov (United States)

Beschoten, Bernd

Long electron spin lifetimes are an important prerequisite for enabling advanced spintronic devices. In this respect the 1-ns benchmark is of high technological interest as it marks the threshold at which manipulation of spins with electrical high frequency technology becomes feasible (1 ns 1 GHz). For a long time, the measured spin lifetimes were shorter than 1 ns. Here we report on a major improvement in device fabrication which pushes the spin lifetimes to 12.6 ns in single layer graphene spin transport devices at room temperature which results in spin diffusion lengths as long as 30.5 μm. This is accomplished by the fabrication of Co/MgO-electrodes on a Si/SiO2 substrate and the subsequent dry transfer of a graphene/hexagonal boron nitride (hBN) stack on top of this electrode structure where a large hBN flake is needed in order to diminish the ingress of solvents along the hBN-to-substrate interface. We demonstrate that the spin lifetime does not depend on the contact resistance area products in these devices, indicating that spin absorption at the contacts is not the predominant source for spin dephasing which may pave the way towards probing intrinsic spin properties of graphene. In the second part, we summarize our effort to replace natural by synthetically grown graphene. We report on an advanced transfer technique that allows both reusing the copper substrate of the CVD graphene growth process and making devices with carrier mobilities as high as three million cm2/(Vs) thus rivaling exfoliated ''natural'' graphene. This material quality allows truly ballistic experiments with electron mean free paths exceeding 28 μm which brings novel electron-optic devices into reach. In collaboration with M. Drögeler, C. Franzen, F. Volmer, L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Goldsche, M. Oellers, T. Pohlmann, M. Wolter, F. Haupt, K. Watanabe, T. Taniguchi, and C. Stampfer.

CMOS-compatible spintronic devices: a review

Science.gov (United States)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

Design of a spin-wave majority gate employing mode selection

Energy Technology Data Exchange (ETDEWEB)

Klingler, S., E-mail: klingler@physik.uni-kl.de; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

2014-10-13

The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

Superheated drop, open-quotes Bubbleclose quotes, dosimeters

International Nuclear Information System (INIS)

Harper, M.J.; Lindler, K.W.; Nelson, M.E.; Johnson, T.L.; Jones, C.R.; Rabovsky, J.L.; Rao, N.; Kerschner, H.F.; Reil, G.K.; Schwartz, R.B.

1991-01-01

Superheated Drop Dosimeters (SDD) offer a sensitive, immediate measure of the neutron dose equivalent, but their dynamic range is limited and their response varies with temperature, pressure, and vibration. They contain thousands of superheated liquid drops in a stabilizing matrix. High linear energy transfer (LET) radiation triggers vaporization of the drops into visible bubbles. If the matrix is a liquid, the bubbles slowly rise, and the number present indicates the dose rate. Dose may be measured by displacement of the matrix, or by counting the sounds of vaporization. If the matrix is a gel, the bubbles are fixed, and their number is proportional to the dose equivalent. Our research has focused on modeling and elimination of the environmental response, extension of the dynamic range, and tests and evaluations of prototype devices

Spinning superfluid 4He nanodroplets

Science.gov (United States)

Ancilotto, Francesco; Barranco, Manuel; Pi, Martí

2018-05-01

We have studied spinning superfluid 4He nanodroplets at zero temperature using density functional theory. Due to the irrotational character of the superfluid flow, the shapes of the spinning nanodroplets are very different from those of a viscous normal fluid drop in steady rotation. We show that when vortices are nucleated inside the superfluid droplets, their morphology, which evolves from axisymmetric oblate to triaxial prolate to two-lobed shapes, is in good agreement with experiments. The presence of vortex arrays confers to the superfluid droplets the rigid-body behavior of a normal fluid in steady rotation, and this is the ultimate reason for the surprising good agreement between recent experiments and the classical models used for their description.

Modeling the neutron spin-flip process in a time-of-flight spin-resonance energy filter

CERN Document Server

Parizzi, A A; Klose, F

2002-01-01

A computer program for modeling the neutron spin-flip process in a novel time-of-flight (TOF) spin-resonance energy filter has been developed. The software allows studying the applicability of the device in various areas of spallation neutron scattering instrumentation, for example as a dynamic TOF monochromator. The program uses a quantum-mechanical approach to calculate the local spin-dependent spectra and is essential for optimizing the magnetic field profiles along the resonator axis. (orig.)

Spin-Wave Diode

Directory of Open Access Journals (Sweden)

Jin Lan (兰金

2015-12-01

Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

Science.gov (United States)

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

Science.gov (United States)

Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

2018-01-09

The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

Science.gov (United States)

Munira, Kamaram; Romero, Jonathon; Butler, William H.

2014-05-01

Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

Novel Magnetic Devices

National Research Council Canada - National Science Library

Schuller, Ivan

2007-01-01

...: ballistic magnetoresistance, magnetic field proximity effect and spin drag. These three phenomena would then be exploited for the design of novel device architectures and to investigate the physical principles behind these devices...

Playing with water drops: from wetting to optics through electrostatics

International Nuclear Information System (INIS)

Domps, A; Roques-Carmes, T

2011-01-01

We present a consistent series of activities, including experiments and basic computational studies, investigating the shape and optical properties of water drops in connection with novel technological devices. Most of the work can be carried out with simple teaching equipment and is well suited to undergraduate students. Firstly, we show how the mass variations of a sessile drop can be used to control its curvature and hence to produce lenses with tunable focal distance. Alternatively, the shape of the drop can be varied using electrowetting on dielectric (EWOD). We propose a simple pedagogical approach to this phenomenon in connection with historical electrostatic apparatus. A detailed process for the preparation of an EWOD device is given, together with a focimetric method allowing the analysis of electrowetting effects in practical exercises. Finally, the manipulations of a commercialized variable focus lens illustrate that EWOD is at the heart of most recent technological developments, making practical work in optics more attractive than traditional exercises using conventional lenses.

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai

2017-10-04

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

Spherically Symmetric Solutions of the Einstein-Bach Equations and a Consistent Spin-2 Field Theory

International Nuclear Information System (INIS)

Janda, A.

2006-01-01

We briefly present a relationship between General Relativity coupled to certain spin-0 and spin-2 field theories and higher derivatives metric theories of gravity. In a special case, described by the Einstein-Bach equations, the spin-0 field drops out from the theory and we obtain a consistent spin-two field theory interacting gravitationally, which overcomes a well known inconsistency of the theory for a linear spin-two field coupled to the Einstein's gravity. Then we discuss basic properties of static spherically symmetric solutions of the Einstein-Bach equations. (author)

Drop deformation and breakup in a partially filled horizontal rotating cylinder

Science.gov (United States)

White, Andrew; Pereira, Caroline; Hyacinthe, Hyaquino; Ward, Thomas

2014-11-01

Drop deformation and breakup due to shear flow has been studied extensively in Couette devices as well as in gravity-driven flows. In these cases shear is generated either by the moving wall or the drop's motion. For such flows the drop shape remains unperturbed at low capillary number (Ca), deforms at moderate Ca , and can experience breakup as Ca --> 1 and larger. Here single drops of NaOH(aq) will be placed in a horizontal cylindrical rotating tank partially filled with vegetable oil resulting in 10-2 saponification, can yield lower minimum surface tensions and faster adsorption than non-reactive surfactant systems. Oil films between the wall and drop as well as drop shape will be observed as rotation rates and NaOH(aq) concentration are varied. Results will be presented in the context of previous work on bubble and drop shapes and breakup. NSF CBET #1262718.

Spin incommensurability and two phase competition in cobaltites.

Science.gov (United States)

Phelan, D; Louca, Despina; Kamazawa, K; Lee, S-H; Ancona, S N; Rosenkranz, S; Motome, Y; Hundley, M F; Mitchell, J F; Moritomo, Y

2006-12-08

The perovskite LaCoO3 evolves from a nonmagnetic Mott insulator to a spin cluster ferromagnet (FM) with the substitution of Sr2+ for La3+ in La1-xSrxCoO3. The clusters increase in size and number with x and the charge percolation through the clusters leads to a metallic state. Using elastic neutron scattering on La1-xSrxCoO3 single crystals, we show that an incommensurate spin superstructure coexists with the FM spin clusters. The incommensurability increases continuously with x, with the intensity rising in the insulating phase and dropping in the metallic phase as it directly competes with the commensurate FM, itinerant clusters. The spin incommensurability arises from local order of Co3+-Co4+ clusters but no long-range static or dynamic spin stripes develop. The coexistence and competition of the two magnetic phases explain the residual resistivity at low temperatures in samples with metalliclike transport.

Scaling during capillary thinning of particle-laden drops

Science.gov (United States)

Thete, Sumeet; Wagoner, Brayden; Basaran, Osman

2017-11-01

A fundamental understanding of drop formation is crucial in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, the about-to-form drop is connected to the fluid hanging from the nozzle via a thinning filament. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids using theory, simulations, and experiments. In some of the applications however, the forming drop and hence the thinning filament may contain solid particles. The thinning dynamics of such particle-laden filaments differs radically from that of particle-free filaments. Moreover, our understanding of filament thinning in the former case is poor compared to that in the latter case despite the growing interest in pinch-off of particle-laden filaments. In this work, we go beyond similar studies and experimentally explore the impact of solid particles on filament thinning by measuring both the radial and axial scalings in the neck region. The results are summarized in terms of a phase diagram of capillary thinning of particle-laden filaments.

Spin Transport in Semiconductor heterostructures

International Nuclear Information System (INIS)

Marinescu, Domnita Catalina

2011-01-01

The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

Spin injection across a hybrid heterojunction: Theoretical understanding and experimental approach (invited)

DEFF Research Database (Denmark)

Hu, C.M.; Nitta, J.; Jensen, Ane

2002-01-01

Spin injection across a hybrid ferromagnet/semiconductor junction has proven to be difficult, unlike in an all-metal junction used in giant magnetoresistance devices. The difference responsible is highlighted in a simple model. We perform spin-injection-detection experiments on devices with two...... ferromagnetic contacts on a two-dimensional electron gas confined in an InAs quantum well. We demonstrate that spin injection allows the hybrid device to combine both the advantage of the ferromagnet as well as that of the semiconductor....

Magnon detection using a ferroic collinear multilayer spin valve.

Science.gov (United States)

Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

2018-03-14

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

Spin-filtering junctions with double ferroelectric barriers

International Nuclear Information System (INIS)

Yan, Ju; Ding-Yu, Xing

2009-01-01

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

Probing quantum spin glass like system with a double quantum dot

Science.gov (United States)

Koh, C. Y.; Kwek, L. C.

2016-06-01

We study the ground state properties of a 4-qubit spin glass like (SGL) chain with probes at the end of the chain and compare our results with the non-spin glass like (NSGL) case. The SGL is modeled as a spin chain with nearest-neighbor couplings, taking on normal variates with mean J and variance Δ2. The entanglement between the probes is used to detect any discontinuity in the ground state energy spectrum. For the NSGL case, it was found that the concurrence of the probes exhibits sharp transitions whenever there are abrupt changes in the energy spectrum. In particular, for the 4-qubit case, there is a sudden change in the ground state energy at an external magnetic field B of around 0.66 (resulting in a drop in concurrence of the probes) and 1.7 (manifest as a spike). The latter spike persists for finite temperature case. For the SGL sample with sufficiently large Δ, however, the spike is absent. Thus, an absence in the spike could act as a possible signature of the presence of SGL effects. Moreover, the sudden drop in concurrence at B ≈ 0.66 does not disappear but gets smeared with increasing Δ. However, this drop can be accentuated with a smaller probe coupling. The finite temperature case is also briefly discussed.

Interlayer quality dependent graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2017-01-15

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Interlayer quality dependent graphene spin valve

International Nuclear Information System (INIS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

2017-01-01

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Nuclear spins in nanostructures

International Nuclear Information System (INIS)

Coish, W.A.; Baugh, J.

2009-01-01

We review recent theoretical and experimental advances toward understanding the effects of nuclear spins in confined nanostructures. These systems, which include quantum dots, defect centers, and molecular magnets, are particularly interesting for their importance in quantum information processing devices, which aim to coherently manipulate single electron spins with high precision. On one hand, interactions between confined electron spins and a nuclear-spin environment provide a decoherence source for the electron, and on the other, a strong effective magnetic field that can be used to execute local coherent rotations. A great deal of effort has been directed toward understanding the details of the relevant decoherence processes and to find new methods to manipulate the coupled electron-nuclear system. A sequence of spectacular new results have provided understanding of spin-bath decoherence, nuclear spin diffusion, and preparation of the nuclear state through dynamic polarization and more general manipulation of the nuclear-spin density matrix through ''state narrowing.'' These results demonstrate the richness of this physical system and promise many new mysteries for the future. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Electrical detection of spin transport in Si two-dimensional electron gas systems

Science.gov (United States)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Giant magneto-resistance devices

CERN Document Server

Hirota, Eiichi; Inomata, Koichiro

2002-01-01

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

Shot noise of spin current and spin transfer torque

International Nuclear Information System (INIS)

Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

2013-01-01

We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

Storing quantum information in spins and high-sensitivity ESR

Science.gov (United States)

Morton, John J. L.; Bertet, Patrice

2018-02-01

Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

Storing quantum information in spins and high-sensitivity ESR.

Science.gov (United States)

Morton, John J L; Bertet, Patrice

2018-02-01

Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

Multi-Valued Spin Switch in a Semiconductor Microcavity

Science.gov (United States)

Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

2011-12-01

In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

Microelectromechanical systems integrating molecular spin crossover actuators

Energy Technology Data Exchange (ETDEWEB)

Manrique-Juarez, Maria D. [LCC, CNRS and Université de Toulouse, UPS, INP, F-31077 Toulouse (France); LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077 Toulouse (France); Rat, Sylvain; Salmon, Lionel; Molnár, Gábor; Bousseksou, Azzedine, E-mail: liviu.nicu@laas.fr, E-mail: azzedine.bousseksou@lcc-toulouse.fr [LCC, CNRS and Université de Toulouse, UPS, INP, F-31077 Toulouse (France); Mathieu, Fabrice; Saya, Daisuke; Séguy, Isabelle; Leïchlé, Thierry; Nicu, Liviu, E-mail: liviu.nicu@laas.fr, E-mail: azzedine.bousseksou@lcc-toulouse.fr [LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077 Toulouse (France)

2016-08-08

Silicon MEMS cantilevers coated with a 200 nm thin layer of the molecular spin crossover complex [Fe(H{sub 2}B(pz){sub 2}){sub 2}(phen)] (H{sub 2}B(pz){sub 2} = dihydrobis(pyrazolyl)borate and phen = 1,10-phenantroline) were actuated using an external magnetic field and their resonance frequency was tracked by means of integrated piezoresistive detection. The light-induced spin-state switching of the molecules from the ground low spin to the metastable high spin state at 10 K led to a well-reproducible shift of the cantilever's resonance frequency (Δf{sub r} = −0.52 Hz). Control experiments at different temperatures using coated as well as uncoated devices along with simple calculations support the assignment of this effect to the spin transition. This latter translates into changes in mechanical behavior of the cantilever due to the strong spin-state/lattice coupling. A guideline for the optimization of device parameters is proposed so as to efficiently harness molecular scale movements for large-scale mechanical work, thus paving the road for nanoelectromechanical systems (NEMS) actuators based on molecular materials.

Magnetization rotation or generation of incoherent spin waves? Suggestions for a spin-transfer effect experiment

International Nuclear Information System (INIS)

Bazaliy, Y. B.; Jones, B. A.

2002-01-01

''Spin-transfer'' torque is created when electric current is passed through metallic ferromagnets and may have interesting applications in spintronics. So far it was experimentally studied in ''collinear'' geometries, where it is difficult to predict whether magnetization will coherently rotate or spin-waves will be generated. Here we propose an easy modification of existing experiment in which the spin-polarization of incoming current will no longer be collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with the magnetization rotation theory will be achieved. That can be an important step in reconciling alternative points of view on the effect of spin-transfer torque

Pattern recognition with magnonic holographic memory device

International Nuclear Information System (INIS)

Kozhevnikov, A.; Dudko, G.; Filimonov, Y.; Gertz, F.; Khitun, A.

2015-01-01

In this work, we present experimental data demonstrating the possibility of using magnonic holographic devices for pattern recognition. The prototype eight-terminal device consists of a magnetic matrix with micro-antennas placed on the periphery of the matrix to excite and detect spin waves. The principle of operation is based on the effect of spin wave interference, which is similar to the operation of optical holographic devices. Input information is encoded in the phases of the spin waves generated on the edges of the magnonic matrix, while the output corresponds to the amplitude of the inductive voltage produced by the interfering spin waves on the other side of the matrix. The level of the output voltage depends on the combination of the input phases as well as on the internal structure of the magnonic matrix. Experimental data collected for several magnonic matrixes show the unique output signatures in which maxima and minima correspond to specific input phase patterns. Potentially, magnonic holographic devices may provide a higher storage density compare to optical counterparts due to a shorter wavelength and compatibility with conventional electronic devices. The challenges and shortcoming of the magnonic holographic devices are also discussed

Information processing in patterned magnetic nanostructures with edge spin waves.

Science.gov (United States)

Lara, Antonio; Robledo Moreno, Javier; Guslienko, Konstantin Y; Aliev, Farkhad G

2017-07-17

Low dissipation data processing with spins is one of the promising directions for future information and communication technologies. Despite a significant progress, the available magnonic devices are not broadband yet and have restricted capabilities to redirect spin waves. Here we propose a breakthrough approach to spin wave manipulation in patterned magnetic nanostructures with unmatched characteristics, which exploits a spin wave analogue to edge waves propagating along a water-wall boundary. Using theory, micromagnetic simulations and experiment we investigate spin waves propagating along the edges in magnetic structures, under an in-plane DC magnetic field inclined with respect to the edge. The proposed edge spin waves overcome important challenges faced by previous technologies such as the manipulation of the spin wave propagation direction, and they substantially improve the capability of transmitting information at frequencies exceeding 10 GHz. The concept of the edge spin waves allows to design a broad of logic devices such as splitters, interferometers, or edge spin wave transistors with unprecedented characteristics and a potentially strong impact on information technologies.

The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

Science.gov (United States)

Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

2017-10-01

A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

Science.gov (United States)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

Magnetization switching schemes for nanoscale three-terminal spintronics devices

Science.gov (United States)

Fukami, Shunsuke; Ohno, Hideo

2017-08-01

Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Science.gov (United States)

MacNeill, D.; Stiehl, G. M.; Guimaraes, M. H. D.; Buhrman, R. A.; Park, J.; Ralph, D. C.

2017-03-01

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation--the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin-source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling spin-orbit torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.

The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

Science.gov (United States)

Laghaei, M.; Heidari Semiromi, E.

2018-03-01

Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

Spin-polarized current generated by magneto-electrical gating

International Nuclear Information System (INIS)

Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

2012-01-01

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

Muonium spin exchange as a Poisson process: magnetic field dependence in transverse fields

International Nuclear Information System (INIS)

Senba, Masayoshi; British Columbia Univ., Vancouver, BC

1993-01-01

The muonium spin exchange has been investigated as a function of transverse magnetic field strength, where the Poisson nature of collisions is exploited to simplify the calculation. In intermediate fields where the so-called two-frequency muonium signal is observed, the muonium relaxation due to spin exchange is 1.5 times faster than in low fields. In even higher fields, the observed relaxation rate drops back to the low field value. Since the relaxation rate due to a chemical reaction is field independent, such a distinct field dependence in spin exchange can be used in distinguishing experimentally spin exchange from chemical reactions. The time evolution of the muon spin polarization in the presence of muonium spin exchange has been expressed in a simple analytical closed form. (author)

EXPERIENCES IN THE AIR SPINNING TO MANUFACTURE MEDICAL DEVICES

Directory of Open Access Journals (Sweden)

MARSAL Feliu

2015-05-01

Full Text Available The work aims to determine, with scientific rigor, differences in key parameters of the yarns produced by conventional ring spinning systems, open-end and air spinning and its interrelation with the main parameters of those products that are intended for medical-sanitary sector. The experiences have been made in a Spanish company from short fibers sector that has three spinning systems, with tradition and prestige in world market, validating the results in Innotex Center laboratories of the Polytechnic University of Catalonia. Considering the results, it shows that the technology of manufacture of yarns by air is suitable for yarn, woven fabrics and knitting, structures to textile medical-sanitary application, by specific properties as well as enhanced competitiveness, due to the high production rate and shortened spinning process. The viscose yarns manufactured by air mass are more mass regular. The new DR parameter clearly indicates a better look of the finished fabric when we work with yarns produced by air technology.The significant reduction of the hairiness means less formation of loose fibres by friction, very important in the application of these yarns in the manufacture of textile structures for medical-sanitary use. Also no-table increase of about 15% in the absorption capacity of the fluids, especially water, from the yarns made by air. In the functionalization of fabrics obtained from spun yarn by air will need to apply a permanent smoothing.

Logical spin-filtering in a triangular network of quantum nanorings with a Rashba spin-orbit interaction

Science.gov (United States)

Dehghan, E.; Sanavi Khoshnoud, D.; Naeimi, A. S.

2018-01-01

The spin-resolved electron transport through a triangular network of quantum nanorings is studied in the presence of Rashba spin-orbit interaction (RSOI) and a magnetic flux using quantum waveguide theory. This study illustrates that, by tuning Rashba constant, magnetic flux and incoming electron energy, the triangular network of quantum rings can act as a perfect logical spin-filtering with high efficiency. By changing in the energy of incoming electron, at a proper value of the Rashba constant and magnetic flux, a reverse in the direction of spin can take place in the triangular network of quantum nanorings. Furthermore, the triangular network of quantum nanorings can be designed as a device and shows several simultaneous spintronic properties such as spin-splitter and spin-inverter. This spin-splitting is dependent on the energy of the incoming electron. Additionally, different polarizations can be achieved in the two outgoing leads from an originally incoming spin state that simulates a Stern-Gerlach apparatus.

Coefficient of restitution of sports balls: A normal drop test

International Nuclear Information System (INIS)

Haron, Adli; Ismail, K A

2012-01-01

Dynamic behaviour of bodies during impact is investigated through impact experiment, the simplest being a normal drop test. Normally, a drop test impact experiment involves measurement of kinematic data; this includes measurement of incident and rebound velocity in order to calculate a coefficient of restitution (COR). A high speed video camera is employed for measuring the kinematic data where speed is calculated from displacement of the bodies. Alternatively, sensors can be employed to measure speeds, especially for a normal impact where there is no spin of the bodies. This paper compares experimental coefficients of restitution (COR) for various sports balls, namely golf, table tennis, hockey and cricket. The energy loss in term of measured COR and effects of target plate are discussed in relation to the material and construction of these sports balls.

ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

KAUST Repository

Monteblanco, Elmer

2017-03-14

Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

KAUST Repository

Monteblanco, Elmer; Ortiz Pauyac, Christian; Savero, Williams; RojasSanchez, J. Carlos; Schuhl, A.

2017-01-01

Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

Science.gov (United States)

Majidi, Danial; Faez, Rahim

2017-02-01

In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

Innovative spin precessor for intermediate energy protons

International Nuclear Information System (INIS)

Hoffman, E.W.

1979-01-01

A spin precessor has been designed to provide arbitrary orientation of the polarization in the external proton beam at LAMPF. The device utilizes two superconducting solenoids, three conventional dipoles, and conversion of polarized H - to H + to provide an achromatic, undeflected beam with tunable spin orientation over a range of energies from 400 MeV to 800 MeV. A portion of this device is being installed to provide compatibility between two facilities which simultaneously use two branches of the external proton beam at LAMPF

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

Directory of Open Access Journals (Sweden)

Pengbin Niu

2018-01-01

Full Text Available We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM, which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

Science.gov (United States)

Niu, Pengbin; Liu, Lixiang; Su, Xiaoqiang; Dong, Lijuan; Luo, Hong-Gang

2018-01-01

We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM), which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Parijat; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215 (United States)

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

Drop Performance Test of CRDMs for JRTR

Energy Technology Data Exchange (ETDEWEB)

Choi, Myoung-Hwan; Cho, Yeong-Garp; Chung, Jong-Ha [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Jung-Hyun [POSCO Plandtec Co. Ltd, Ulsan (Korea, Republic of); Lee, Kwan-Hee [RIST, Pohang (Korea, Republic of)

2015-10-15

The drop test results of CRDMs with AC-type electromagnet show that the initial delay times are not satisfied with the requirement, 0.15 seconds. After the replacement of the electromagnet from AC-type to DCtype, the drop times of CARs and accelerations due to the impact of moving parts are satisfied with all requirements. As a result, it is found that four CRDMs to be installed at site have a good drop performance, and meet all performance requirements. A control rod drive mechanism (CRDM) is a device to control the position of a control absorber rod (CAR) in the core by using a stepping motor which is commanded by the reactor regulating system (RRS) to control the reactivity during the normal operation of the reactor. The top-mounted CRDM driven by the stepping motor for Jordan Research and Training Reactor (JRTR) has been developed in KAERI. The CRDM for JRTR has been optimized by the design improvement based on that of the HANARO. It is necessary to verify the performances such as the stepping, drop, endurance, vibration, seismic and structural integrity for active components. Especially, the CAR drop curves are important data for the safety analysis. This paper describes the test results to demonstrate the drop performances of a prototype and 4 CRDMs to be installed at site. The tests are carried out at a test rig simulating the actual reactor's conditions.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian

2013-06-26

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

2013-01-01

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien

2018-01-29

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

KAUST Repository

Manchon, Aurelien; Miron, I. M.; Jungwirth, T.; Sinova, J.; Zelezný , J.; Thiaville, A.; Garello, K.; Gambardella, P.

2018-01-01

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

Scaling the drop size in coflow experiments

International Nuclear Information System (INIS)

Castro-Hernandez, E; Gordillo, J M; Gundabala, V; Fernandez-Nieves, A

2009-01-01

We perform extensive experiments with coflowing liquids in microfluidic devices and provide a closed expression for the drop size as a function of measurable parameters in the jetting regime that accounts for the experimental observations; this expression works irrespective of how the jets are produced, providing a powerful design tool for this type of experiments.

Scaling the drop size in coflow experiments

Energy Technology Data Exchange (ETDEWEB)

Castro-Hernandez, E; Gordillo, J M [Area de Mecanica de Fluidos, Universidad de Sevilla, Avenida de los Descubrimientos s/n, 41092 Sevilla (Spain); Gundabala, V; Fernandez-Nieves, A [School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States)], E-mail: jgordill@us.es

2009-07-15

We perform extensive experiments with coflowing liquids in microfluidic devices and provide a closed expression for the drop size as a function of measurable parameters in the jetting regime that accounts for the experimental observations; this expression works irrespective of how the jets are produced, providing a powerful design tool for this type of experiments.

Superconducting magnetic Wollaston prism for neutron spin encoding

Energy Technology Data Exchange (ETDEWEB)

Li, F., E-mail: fankli@indiana.edu; Parnell, S. R.; Wang, T.; Baxter, D. V. [Center for Exploration of Energy and Matter, Indiana University, Bloomington, Indiana 47408 (United States); Hamilton, W. A. [Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Maranville, B. B. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Semerad, R. [Ceraco Ceramic Coating GmbH, Ismaning 85737 (Germany); Cremer, J. T. [Adelphi Technology Inc., Redwood City, California 94063 (United States); Pynn, R. [Center for Exploration of Energy and Matter, Indiana University, Bloomington, Indiana 47408 (United States); Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States)

2014-05-15

A magnetic Wollaston prism can spatially split a polarized neutron beam into two beams with different neutron spin states, in a manner analogous to an optical Wollaston prism. Such a Wollaston prism can be used to encode the trajectory of neutrons into the Larmor phase associated with their spin degree of freedom. This encoding can be used for neutron phase-contrast radiography and in spin echo scattering angle measurement (SESAME). In this paper, we show that magnetic Wollaston prisms with highly uniform magnetic fields and low Larmor phase aberration can be constructed to preserve neutron polarization using high temperature superconducting (HTS) materials. The Meissner effect of HTS films is used to confine magnetic fields produced electromagnetically by current-carrying HTS tape wound on suitably shaped soft iron pole pieces. The device is cooled to ∼30 K by a closed cycle refrigerator, eliminating the need to replenish liquid cryogens and greatly simplifying operation and maintenance. A HTS film ensures that the magnetic field transition within the prism is sharp, well-defined, and planar due to the Meissner effect. The spin transport efficiency across the device was measured to be ∼98.5% independent of neutron wavelength and energizing current. The position-dependent Larmor phase of neutron spins was measured at the NIST Center for Neutron Research facility and found to agree well with detailed simulations. The phase varies linearly with horizontal position, as required, and the neutron beam shows little depolarization. Consequently, the device has advantages over existing devices with similar functionality and provides the capability for a large neutron beam (20 mm × 30 mm) and an increase in length scales accessible to SESAME to beyond 10 μm. With further improvements of the external coupling guide field in the prototype device, a larger neutron beam could be employed.

Superconducting magnetic Wollaston prism for neutron spin encoding

Science.gov (United States)

Li, F.; Parnell, S. R.; Hamilton, W. A.; Maranville, B. B.; Wang, T.; Semerad, R.; Baxter, D. V.; Cremer, J. T.; Pynn, R.

2014-05-01

A magnetic Wollaston prism can spatially split a polarized neutron beam into two beams with different neutron spin states, in a manner analogous to an optical Wollaston prism. Such a Wollaston prism can be used to encode the trajectory of neutrons into the Larmor phase associated with their spin degree of freedom. This encoding can be used for neutron phase-contrast radiography and in spin echo scattering angle measurement (SESAME). In this paper, we show that magnetic Wollaston prisms with highly uniform magnetic fields and low Larmor phase aberration can be constructed to preserve neutron polarization using high temperature superconducting (HTS) materials. The Meissner effect of HTS films is used to confine magnetic fields produced electromagnetically by current-carrying HTS tape wound on suitably shaped soft iron pole pieces. The device is cooled to ˜30 K by a closed cycle refrigerator, eliminating the need to replenish liquid cryogens and greatly simplifying operation and maintenance. A HTS film ensures that the magnetic field transition within the prism is sharp, well-defined, and planar due to the Meissner effect. The spin transport efficiency across the device was measured to be ˜98.5% independent of neutron wavelength and energizing current. The position-dependent Larmor phase of neutron spins was measured at the NIST Center for Neutron Research facility and found to agree well with detailed simulations. The phase varies linearly with horizontal position, as required, and the neutron beam shows little depolarization. Consequently, the device has advantages over existing devices with similar functionality and provides the capability for a large neutron beam (20 mm × 30 mm) and an increase in length scales accessible to SESAME to beyond 10 μm. With further improvements of the external coupling guide field in the prototype device, a larger neutron beam could be employed.

Dynamic Circuit Model for Spintronic Devices

KAUST Repository

Alawein, Meshal

2017-01-09

In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

Dynamic Circuit Model for Spintronic Devices

KAUST Repository

Alawein, Meshal; Fariborzi, Hossein

2017-01-01

In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

Melanin: spin behaviour and implications for bioelectronic devices (Presentation Recording)

Science.gov (United States)

Meredith, Paul; Sheliakina, Margarita; Mostert, Bernard

2015-10-01

The melanins are a broad class of pigmentary macromolecules found through nature that perform a wide range of functions including photo-protection [1]. The most common melanin - the brown, black pigment eumelanin, has been much studied because of its role in melanoma and also for its functional material properties [2]. Synthetic eumelanin has been shown to be photoconductive in the solid state and also possess a water content dependent dark conductivity [3]. It is now well established that these electrical properties arise from hybrid ionic-electronic behaviour, leading to the proposition that melanins could be model biocompatible systems for ion-to-electron transduction in bioelectronics. In my talk, I will discuss the basic science behind these bioelectronics properties - electrical and optical. In this context I will also describe recent electron paramagnetic spin studies which isolate the role of the various chemical moieties responsible for the hybrid ionic-electronic behaviour. I will also highlight preliminary results on prototype melanin-based bioelectronics devices and discuss possible architectures to realise elements such as solid-state switches and transducers. [1] "The physical and chemical properties of eumelanin", P. Meredith and T. Sarna, Pigment Cell Research, 19(6), pp572-594 (2006). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013). [3] "Is melanin a semiconductor: humidity induced self doping and the electrical conductivity of a biopolymer", A.B. Mostert, B.J. Powell, F.L. Pratt, G.R. Hanson, T. Sarna, I.R. Gentle and P. Meredith, Proceedings of the National Academy of Sciences of the USA, 109(23), 8943-8947 (2012).

Frequency multiplexing for readout of spin qubits

Energy Technology Data Exchange (ETDEWEB)

Hornibrook, J. M.; Colless, J. I.; Mahoney, A. C.; Croot, X. G.; Blanvillain, S.; Reilly, D. J., E-mail: david.reilly@sydney.edu.au [ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Lu, H.; Gossard, A. C. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-03-10

We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realise dispersive gate-sensing in combination with charge detection based on two radio frequency quantum point contacts. We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels are discussed.

Effect of humidity on the filter pressure drop

International Nuclear Information System (INIS)

Vendel, J.; Letourneau, P.

1995-01-01

The effects of humidity on the filter pressure drop have been reported in some previous studies in which it is difficult to draw definite conclusions. These studies show contradictory effects of humidity on the pressure drop probably due to differences in the hygroscopicity of the test aerosols. The objective of this paper is to present experimental results on the evolution of the filter pressure drop versus mass loading, for different test aerosols and relative humidities. Present results are compared to those found in various publication. An experimental device has been designed to measure filter pressure drop as the function of the areal density for relative humidity varying in the range of 9 % to 85 %. Experiments have been conducted with hygroscopic: (CsOH) and nonhygroscopic aerosols (TiO 2 ). Cesium hydroxyde (CsOH) of size of 2 μ M AMMD has been generated by an ultrasonic generator and the 0.7 μm AMMD titanium oxyde has been dispersed by a open-quotes turn-tableclose quotes generator. As it is noted in the BISWAS'publication [3], present results show, in the case of nonhygroscopic aerosols, a linear relationship of pressure drop to mass loading. For hygroscopic aerosols two cases must be considered: for relative humidity below the deliquescent point of the aerosol, the relationship of pressure drop to mass loading remains linear; above the deliquescent point, the results show a sudden increase in the pressure drop and the mass capacity of the filter is drastically reduced

Effect of humidity on the filter pressure drop

Energy Technology Data Exchange (ETDEWEB)

Vendel, J.; Letourneau, P. [Institut de Protection et de Surete Nucleaire, Gif-sur-Yvette (France)

1995-02-01

The effects of humidity on the filter pressure drop have been reported in some previous studies in which it is difficult to draw definite conclusions. These studies show contradictory effects of humidity on the pressure drop probably due to differences in the hygroscopicity of the test aerosols. The objective of this paper is to present experimental results on the evolution of the filter pressure drop versus mass loading, for different test aerosols and relative humidities. Present results are compared to those found in various publication. An experimental device has been designed to measure filter pressure drop as the function of the areal density for relative humidity varying in the range of 9 % to 85 %. Experiments have been conducted with hygroscopic: (CsOH) and nonhygroscopic aerosols (TiO{sub 2}). Cesium hydroxyde (CsOH) of size of 2 {mu} M AMMD has been generated by an ultrasonic generator and the 0.7 {mu}m AMMD titanium oxyde has been dispersed by a {open_quotes}turn-table{close_quotes} generator. As it is noted in the BISWAS`publication [3], present results show, in the case of nonhygroscopic aerosols, a linear relationship of pressure drop to mass loading. For hygroscopic aerosols two cases must be considered: for relative humidity below the deliquescent point of the aerosol, the relationship of pressure drop to mass loading remains linear; above the deliquescent point, the results show a sudden increase in the pressure drop and the mass capacity of the filter is drastically reduced.

Physics and application of persistent spin helix state in semiconductor heterostructures

Science.gov (United States)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

International Nuclear Information System (INIS)

Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

2011-01-01

Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

Spin Injection in Indium Arsenide

Directory of Open Access Journals (Sweden)

Mark eJohnson

2015-08-01

Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

Spin-orbit interaction in multiple quantum wells

International Nuclear Information System (INIS)

Hao, Ya-Fei

2015-01-01

In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices

Spin-orbit interaction in multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Hao, Ya-Fei, E-mail: haoyafei@zjnu.cn [Physics Department, Zhejiang Normal University, Zhejiang 321004 (China)

2015-01-07

In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

Quantum spin circulator in Y junctions of Heisenberg chains

Science.gov (United States)

Buccheri, Francesco; Egger, Reinhold; Pereira, Rodrigo G.; Ramos, Flávia B.

2018-06-01

We show that a quantum spin circulator, a nonreciprocal device that routes spin currents without any charge transport, can be achieved in Y junctions of identical spin-1 /2 Heisenberg chains coupled by a chiral three-spin interaction. Using bosonization, boundary conformal field theory, and density matrix renormalization group simulations, we find that a chiral fixed point with maximally asymmetric spin conductance arises at a critical point separating a regime of disconnected chains from a spin-only version of the three-channel Kondo effect. We argue that networks of spin-chain Y junctions provide a controllable approach to construct long-sought chiral spin-liquid phases.

A pressure drop model for PWR grids

Energy Technology Data Exchange (ETDEWEB)

Oh, Dong Seok; In, Wang Ki; Bang, Je Geon; Jung, Youn Ho; Chun, Tae Hyun [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

1999-12-31

A pressure drop model for the PWR grids with and without mixing device is proposed at single phase based on the fluid mechanistic approach. Total pressure loss is expressed in additive way for form and frictional losses. The general friction factor correlations and form drag coefficients available in the open literatures are used to the model. As the results, the model shows better predictions than the existing ones for the non-mixing grids, and reasonable agreements with the available experimental data for mixing grids. Therefore it is concluded that the proposed model for pressure drop can provide sufficiently good approximation for grid optimization and design calculation in advanced grid development. 7 refs., 3 figs., 3 tabs. (Author)

A pressure drop model for PWR grids

Energy Technology Data Exchange (ETDEWEB)

Oh, Dong Seok; In, Wang Ki; Bang, Je Geon; Jung, Youn Ho; Chun, Tae Hyun [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

1998-12-31

A pressure drop model for the PWR grids with and without mixing device is proposed at single phase based on the fluid mechanistic approach. Total pressure loss is expressed in additive way for form and frictional losses. The general friction factor correlations and form drag coefficients available in the open literatures are used to the model. As the results, the model shows better predictions than the existing ones for the non-mixing grids, and reasonable agreements with the available experimental data for mixing grids. Therefore it is concluded that the proposed model for pressure drop can provide sufficiently good approximation for grid optimization and design calculation in advanced grid development. 7 refs., 3 figs., 3 tabs. (Author)

Field-induced negative differential spin lifetime in silicon.

Science.gov (United States)

Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

2012-04-13

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

Origin of spin-polarization in edge boron doped zigzag graphene nanoribbon: a potential spin filter.

Science.gov (United States)

Chakrabarty, Soubhik; Wasey, A H M Abdul; Thapa, Ranjit; Das, Gour Prasad

2018-06-04

To realize the graphene based spintronic device the prime challenge is to control the electronic structure of edges. In this work we find the origin of spin filtering property in edge boron doped zigzag graphene nanoribbon (ZGNRs) and provide a guide to prepare the graphene based next generation spin filter based device. Here we unveil the role of orbital (p-electron) to tune the electronic, magnetic and transport properties of the edge B doped ZGNRs. When all the edge carbon atoms at one of the edges of ZGNRs are replaced by B (100% edge B-doping), the system undergoes semiconductor to metal transition. The role of passivation of the edge with single/double atomic hydrogen on the electronic properties and its relation with the p electron is correlated in-depth. 50% edge B-doped ZGNRs (50% of the edge C atoms at one of the edges are replaced by B) also shows half-metallicity when the doped edge is left unpassivated. The half-metallic systems show 100% spin-filtering efficiency for a wide range of bias voltages. Zero bias transmission function of the other configurations shows asymmetric behavior for the up and down spin channels, thereby indicating their possible application potential in nano-spintronics. © 2018 IOP Publishing Ltd.

Role of Structural Asymmetry in Controlling Drop Spacing in Microfluidic Ladder Networks

Science.gov (United States)

Wang, William; Maddala, Jeevan; Vanapalli, Siva; Rengasamy, Raghunathan

2012-02-01

Manipulation of drop spacing is crucial to many processes in microfluidic devices including drop coalescence, detection and storage. Microfluidic ladder networks ---where two droplet-carrying parallel channels are connected by narrow bypass channels through which the motion of drops is forbidden---have been proposed as a means to control relative separation between pairs of drops. Prior studies in microfluidic ladder networks with vertical bypasses, which possess fore-aft structural symmetry, have revealed that pairs of drops can only undergo reduction in drop spacing at the ladder exit. We investigate the dynamics of drops in microfluidic ladder networks with both vertical and slanted bypasses. Our analytical results indicate that unlike symmetric ladder networks, structural asymmetry introduced by a single slanted bypass can be used to modulate the relative spacing between drops, enabling them to contract, synchronize, expand or even flip at the ladder exit. Our experiments confirm all the behaviors predicted by theory. Numerical analysis further shows that ladders containing several identical bypasses can only linearly transform the input drop spacing. Finally, we find that ladders with specific combinations of vertical and slanted bypasses can generate non-linear transformation of input drop spacing, despite the absence of drop decision-making events at the bypass junctions.

Coherent Dynamics of a Hybrid Quantum Spin-Mechanical Oscillator System

Science.gov (United States)

Lee, Kenneth William, III

A fully functional quantum computer must contain at least two important components: a quantum memory for storing and manipulating quantum information and a quantum data bus to securely transfer information between quantum memories. Typically, a quantum memory is composed of a matter system, such as an atom or an electron spin, due to their prolonged quantum coherence. Alternatively, a quantum data bus is typically composed of some propagating degree of freedom, such as a photon, which can retain quantum information over long distances. Therefore, a quantum computer will likely be a hybrid quantum device, consisting of two or more disparate quantum systems. However, there must be a reliable and controllable quantum interface between the memory and bus in order to faithfully interconvert quantum information. The current engineering challenge for quantum computers is scaling the device to large numbers of controllable quantum systems, which will ultimately depend on the choice of the quantum elements and interfaces utilized in the device. In this thesis, we present and characterize a hybrid quantum device comprised of single nitrogen-vacancy (NV) centers embedded in a high quality factor diamond mechanical oscillator. The electron spin of the NV center is a leading candidate for the realization of a quantum memory due to its exceptional quantum coherence times. On the other hand, mechanical oscillators are highly sensitive to a wide variety of external forces, and have the potential to serve as a long-range quantum bus between quantum systems of disparate energy scales. These two elements are interfaced through crystal strain generated by vibrations of the mechanical oscillator. Importantly, a strain interface allows for a scalable architecture, and furthermore, opens the door to integration into a larger quantum network through coupling to an optical interface. There are a few important engineering challenges associated with this device. First, there have been no

Emulsion Design. Analysis of Drop Deformations in Mixed Flows

DEFF Research Database (Denmark)

Egholm, Runi Ditlev

2008-01-01

. Furthermore wall effects are also investigated by varying the size of the computational domain which consists of a box with variable mesh size. In the center of the domain, where the drop resides, the mesh consists of a fine region whereas closer to the walls the elements gradually increase in size. Tests...... by the drop in the rotor-stator device is emulated in the computational box used for carrying out drop shape simulations. Comparison of simulated and experimentally obtained deformations show that in general the agreement is acceptable on a qualitative level. However, the simulations predict deformations...... there is a relaxation in the flow field. Furthermore we observe that for small viscosity ratios (A ~ 0.1) tip streaming is predominant while for larger viscosity ratios either binary or capillary break-up is predominant....

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Drop jumping. II. The influence of dropping height on the biomechanics of drop jumping

NARCIS (Netherlands)

Bobbert, M F; Huijing, P A; van Ingen Schenau, G J

In the literature, athletes preparing for explosive activities are recommended to include drop jumping in their training programs. For the execution of drop jumps, different techniques and different dropping heights can be used. This study was designed to investigate for the performance of bounce

Dynamics of High-Order Spin-Orbit Couplings about Linear Momenta in Compact Binary Systems*

International Nuclear Information System (INIS)

Huang Li; Wu Xin; Huang Guo-Qing; Mei Li-Jie

2017-01-01

This paper relates to the post-Newtonian Hamiltonian dynamics of spinning compact binaries, consisting of the Newtonian Kepler problem and the leading, next-to-leading and next-to-next-to-leading order spin-orbit couplings as linear functions of spins and momenta. When this Hamiltonian form is transformed to a Lagrangian form, besides the terms corresponding to the same order terms in the Hamiltonian, several additional terms, third post-Newtonian (3PN), 4PN, 5PN, 6PN and 7PN order spin-spin coupling terms, yield in the Lagrangian. That means that the Hamiltonian is nonequivalent to the Lagrangian at the same PN order but is exactly equivalent to the full Lagrangian without any truncations. The full Lagrangian without the spin-spin couplings truncated is integrable and regular. Whereas it is non-integrable and becomes possibly chaotic when any one of the spin-spin terms is dropped. These results are also supported numerically. (paper)

Spin-polarizated transmissivity in an asymmetrical double barrier

International Nuclear Information System (INIS)

Teixeira, J D S; Frota, H O; Bittencourt, A C R

2014-01-01

The spin-polarized electron resonant tunnelling at zero magnetic field through a double barrier heterostructure like InAs/GaSb/InAs/GaSb/InAs has been calculated as a function of the electron energy. A model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunnelling, taking into account the k 3 dependence of the Dresselhaus Hamiltonian. For the directions ϕ=45 ∘ and 135 ∘ the spin mixing produces a 100% efficiency of polarization. Moreover, the effect of the Dresselhaus and Rashba spin-orbit interactions are shown to be quite favorable for the fabrication of spin filters and spintronic devices. (paper)

Evaluating Graphene as a Channel Material in Spintronic Logic Devices

Science.gov (United States)

Anugrah, Yoska

Spintronics, a class of devices that exploit the spin properties of electrons in addition to the charge properties, promises the possibility for nonvolatile logic and memory devices that operate at low power. Graphene is a material in which the spin orientation of electrons can be conserved over a long distance, which makes it an attractive channel material in spintronics devices. In this dissertation, the properties of graphene that are interesting for spintronics applications are explored. A robust fabrication process is described for graphene spin valves using Al2O3 tunnel tunnel barriers and Co ferromagnetic contacts. Spin transport was characterized in both few-layer exfoliated and single-layer graphene, and spin diffusion lengths and spin relaxation times were extracted using the nonlocal spin valve geometry and Hanle measurements. The effect of input-output asymmetry on the spin transport was investigated. The effect of an applied drift electric field on spin transport was investigated and the spin diffusion length was found to be tunable by a factor of 8X (suppressed to 1.6 microm and enhanced to 13 microm from the intrinsic length of 4.6 microm using electric field of +/-1800 V/cm). A mechanism to induce asymmetry without excess power dissipation is also described which utilizes a double buried-gate structure to tune the Fermi levels on the input and output sides of a graphene spin logic device independently. It was found that different spin scattering mechanisms were at play in the two halves of a small graphene strip. This suggests that the spin properties of graphene are strongly affected by its local environment, e.g. impurities, surface topography, defects. Finally, two-dimensional materials beyond graphene have been explored as spin channels. One such material is phosphorene, which has low spin-orbit coupling and high mobility, and the interface properties of ferromagnets (cobalt and permalloy) with this material were explored. This work could

Spin-exchange and spin-destruction rates for the 3He-Na system

International Nuclear Information System (INIS)

Borel, P.I.; Soegaard, L.V.; Svendsen, W.E.; Andersen, N.

2003-01-01

Optically pumped Na is used as a spin-exchange partner to polarize 3 He. Polarizations around 20% have routinely been achieved in sealed spherical glass cells containing 3 He, N 2 , and a few droplets of Na. An optical technique has been developed to determine the Na- 3 He spin-exchange rate coefficient. By monitoring the Na spin relaxation ''in the dark,'' the average Na-Na spin-destruction cross section at 330 degree sign C is estimated to be around 5x10 -19 cm 2 . This value is 2-5 (15-30) times smaller than the previously reported values for the K-K (Rb-Rb) spin-relaxation cross section. In the temperature range 310-355 degree sign C the spin-exchange rate coefficient is found to be (6.1±0.6)x10 -20 cm 3 /s with no detectable temperature dependence. This value is in good agreement with a previous theoretical estimate reported by Walker and it is only slightly lower than the corresponding Rb- 3 He spin-exchange rate coefficient. The total Na- 3 He spin-destruction rate coefficient is, within errors, found to be the same as the Na- 3 He spin-exchange rate coefficient, thereby indicating that the maximum possible photon efficiency may approach unity for the Na- 3 He system. A technique, in which a charge-coupled device camera is used to take images of faint unquenched fluorescence light, has been utilized to allow for an instantaneous determination of the sodium number densities during the rate coefficient measurements

Quantum Point Contacts as Spin Injectors and Detectors for Studying Rasha Spin Precession in Semiconductor Quantum Wires

Science.gov (United States)

Debray, Philippe; Shorubalko, Ivan; Xu, Hongqi

2007-03-01

We have studied polarized spin transport in a device consisting of three quantum point contacts (QPCs) in series made on InGaAs/InP quantum-well (QW) structures. The QPCs were created by independent pairs of side gates, each pair for one QPC. By adjusting the bias voltages of the side gates, the widths of the QPCs are independently tuned to have transport in the fundamental mode. An external magnetic field of a few T causes spin splitting of the lowest one-dimensional (1D) subbands. The widths of the end QPCs are adjusted to position the Fermi level in the spin-split energy gap, while that of the central QPC is kept wide enough to populate both spin-split bands. Measurement of the conductance of the end QPCs at low temperatures (spinFET.

In search of a quasi-zero dimensional quantum spin-switching device

International Nuclear Information System (INIS)

Hancock, Y.

2002-01-01

Full text: In this paper, we propose a theoretical mechanism and potential application for quantum spin switching systems of the generic NMMMMMN type. In this case, N and M respectively refer to non-magnetic and magnetic atoms, of a 7-site finite, inhomogeneous system. We base our understanding on recent investigations into the magnetic induction mechanism on the N-type sites. Such investigations were performed within the context of the Hubbard Model, using both Hartree-Fock and Exact Diagonalization studies. In this work, we have used exact diagonalization studies to probe the spin-spin (2-site) correlation results of these systems, as a function of the model parameters and electron filling. Such calculations were performed within the context of the Hubbard and the Extended Hubbard Models. We have used our results as a means of investigating the proposed quantum spin-switching mechanism within the context of the full many-body problem. In addition to investigating this mechanism, we aim to propose a more realistic theoretical context in which the potential of these systems can be further explored

Graphene spin capacitor for magnetic field sensing

OpenAIRE

Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

2010-01-01

An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Science.gov (United States)

Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

2018-04-01

Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

Extrinsic spin Hall effect in graphene

Science.gov (United States)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Spintronics in nanoscale devices

CERN Document Server

Hedin, Eric R

2013-01-01

By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

Resolved sidebands in a strain-coupled hybrid spin-oscillator system

OpenAIRE

Teissier, Jean; Barfuss, Arne; Appel, Patrick; Neu, Elke; Maletinsky, P.

2014-01-01

We report on single electronic spins coupled to the motion of mechanical resonators by a novel mechanism based on crystal strain. Our device consists of single-crystalline diamond cantilevers with embedded Nitrogen-Vacancy center spins. Using optically detected electron spin resonance, we determine the unknown spin-strain coupling constants and demonstrate that our system resides well within the resolved sideband regime. We realize coupling strengths exceeding ten MHz under mechanical driving...

Half-metallic superconducting triplet spin multivalves

Science.gov (United States)

Alidoust, Mohammad; Halterman, Klaus

2018-02-01

We study spin switching effects in finite-size superconducting multivalve structures. We examine F1F2SF3 and F1F2SF3F4 hybrids where a singlet superconductor (S) layer is sandwiched among ferromagnet (F) layers with differing thicknesses and magnetization orientations. Our results reveal a considerable number of experimentally viable spin-valve configurations that lead to on-off switching of the superconducting state. For S widths on the order of the superconducting coherence length ξ0, noncollinear magnetization orientations in adjacent F layers with multiple spin axes leads to a rich variety of triplet spin-valve effects. Motivated by recent experiments, we focus on samples where the magnetizations in the F1 and F4 layers exist in a fully spin-polarized half-metallic phase, and calculate the superconducting transition temperature, spatially and energy resolved density of states, and the spin-singlet and spin-triplet superconducting correlations. Our findings demonstrate that superconductivity in these devices can be completely switched on or off over a wide range of magnetization misalignment angles due to the generation of equal-spin and opposite-spin triplet pairings.

Measurement of an Evaporating Drop on a Reflective Substrate

Science.gov (United States)

Chao, David F.; Zhang, Nengli

2004-01-01

A figure depicts an apparatus that simultaneously records magnified ordinary top-view video images and laser shadowgraph video images of a sessile drop on a flat, horizontal substrate that can be opaque or translucent and is at least partially specularly reflective. The diameter, contact angle, and rate of evaporation of the drop as functions of time can be calculated from the apparent diameters of the drop in sequences of the images acquired at known time intervals, and the shadowgrams that contain flow patterns indicative of thermocapillary convection (if any) within the drop. These time-dependent parameters and flow patterns are important for understanding the physical processes involved in the spreading and evaporation of drops. The apparatus includes a source of white light and a laser (both omitted from the figure), which are used to form the ordinary image and the shadowgram, respectively. Charge-coupled-device (CCD) camera 1 (with zoom) acquires the ordinary video images, while CCD camera 2 acquires the shadowgrams. With respect to the portion of laser light specularly reflected from the substrate, the drop acts as a plano-convex lens, focusing the laser beam to a shadowgram on the projection screen in front of CCD camera 2. The equations for calculating the diameter, contact angle, and rate of evaporation of the drop are readily derived on the basis of Snell s law of refraction and the geometry of the optics.

Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

Science.gov (United States)

Åkerman, Johan

2013-03-01

The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

DEFF Research Database (Denmark)

Piraux, L.; Renard, K.; Guillemet, R.

2007-01-01

We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena....... The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin...

PREFACE International Symposium on Spintronic Devices and Commercialization 2010

Science.gov (United States)

Du, You-wei; Judy, Jack; Qian, Zhenghong; Wang, Jianping

2011-01-01

SSDC logo Preface The International Symposium on Spintronic Devices and Commercialization (ISSDC' 2010) was held in Beijing, China, from 21 to 24 October 2010. The aim of the symposium was to provide an opportunity for international experts, academics, researchers, practitioners and students working in the areas of spintronic theories, spintronic materials, and spintronic devices to exchange information on the R&D and commercialization of spintronic materials and devices. New developments, concepts, future research trends and potential commercialization areas were also discussed. The topics covered by ISSDC' 2010 were: Fundmental Spintronic Theories/Experiments Spin polarization, spin-dependent scattering, spin relaxation, spin manipulation and optimization, as well as other related characterizations and applications, etc. Spintronic Materials Giant magnetoresistance materials, magnetic tunnel junction materials, magnetic semiconductor materials, molecular spintronic materials. Spintronic Devices Sensors, isolators, spin logic devices and magnetic random access memories (MRAMs), microwave devices, spin diodes, spin transistor, spin filters and detectors, spin optoelectronic devices, spin quantum devices, single chip computer, spin molecule and single electron devices. Other Magnetic Materials Soft magnetic materials, hard magnetic materials, magneto-optical materials, magnetostriction materials. Applications of Spintronic Devices Magnetic position/angle/velocity/rotation velocity sensors, magnetic encoders, magnetic compasses, bio-medical magnetic devices and other applications. Future Research Trends and the Commercialization of Spintronic Devices Approximately 85 scientists from almost 10 countries participated in the conference. The conference featured 6 keynote lectures, 8 invited lectures, 12 contributed lectures and about 30 posters. We would like to express our gratitude to all participants for their presentations and discussions, which made the conference

Efficient spin-current injection in single-molecule magnet junctions

Directory of Open Access Journals (Sweden)

Haiqing Xie

2018-01-01

Full Text Available We study theoretically spin transport through a single-molecule magnet (SMM in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

Efficient spin-current injection in single-molecule magnet junctions

Science.gov (United States)

Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

2018-01-01

We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

Pulsar Kicks via Spin-1 Color Superconductivity

International Nuclear Information System (INIS)

Schmitt, Andreas; Shovkovy, Igor A.; Wang Qun

2005-01-01

We propose a new neutrino propulsion mechanism for neutron stars which can lead to strong velocity kicks, needed to explain the observed bimodal velocity distribution of pulsars. The spatial asymmetry in the neutrino emission is naturally provided by a stellar core containing spin-1 color-superconducting quark matter in the A phase. The neutrino propulsion mechanism switches on when the stellar core temperature drops below the transition temperature of this phase

Green chemistry and nanofabrication in a levitated Leidenfrost drop

Science.gov (United States)

Abdelaziz, Ramzy; Disci-Zayed, Duygu; Hedayati, Mehdi Keshavarz; Pöhls, Jan-Hendrik; Zillohu, Ahnaf Usman; Erkartal, Burak; Chakravadhanula, Venkata Sai Kiran; Duppel, Viola; Kienle, Lorenz; Elbahri, Mady

2013-10-01

Green nanotechnology focuses on the development of new and sustainable methods of creating nanoparticles, their localized assembly and integration into useful systems and devices in a cost-effective, simple and eco-friendly manner. Here we present our experimental findings on the use of the Leidenfrost drop as an overheated and charged green chemical reactor. Employing a droplet of aqueous solution on hot substrates, this method is capable of fabricating nanoparticles, creating nanoscale coatings on complex objects and designing porous metal in suspension and foam form, all in a levitated Leidenfrost drop. As examples of the potential applications of the Leidenfrost drop, fabrication of nanoporous black gold as a plasmonic wideband superabsorber, and synthesis of superhydrophilic and thermal resistive metal-polymer hybrid foams are demonstrated. We believe that the presented nanofabrication method may be a promising strategy towards the sustainable production of functional nanomaterials.

Thermal stability of tunneling spin polarization

International Nuclear Information System (INIS)

Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

2005-01-01

We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

Science.gov (United States)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

Electrical detection of magnetization dynamics via spin rectification effects

Energy Technology Data Exchange (ETDEWEB)

Harder, Michael, E-mail: michael.harder@umanitoba.ca; Gui, Yongsheng, E-mail: ysgui@physics.umanitoba.ca; Hu, Can-Ming, E-mail: hu@physics.umanitoba.ca

2016-11-23

The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro and nanostructured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook format easy to be used for analysing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

Solvable model of spin-dependent transport through a finite array of quantum dots

International Nuclear Information System (INIS)

Avdonin, S A; Dmitrieva, L A; Kuperin, Yu A; Sartan, V V

2005-01-01

The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to a 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach a few per cent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy intervals. For the same energy intervals the conductance of the device reaches the value ∼1 in [e 2 /πℎ] units. As a result a model of the spin gun which transforms the spin-unpolarized electron beam into a completely polarized one is suggested

Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

Science.gov (United States)

Wan, J.; Cahay, M.; Bandyopadhyay, S.

2008-06-01

We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor.

Science.gov (United States)

Bogan, A; Studenikin, S A; Korkusinski, M; Aers, G C; Gaudreau, L; Zawadzki, P; Sachrajda, A S; Tracy, L A; Reno, J L; Hargett, T W

2017-04-21

Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.

Spin-polarized currents in a two-terminal double quantum ring driven by magnetic fields and Rashba spin-orbit interaction

Science.gov (United States)

Dehghan, E.; Khoshnoud, D. Sanavi; Naeimi, A. S.

2018-06-01

Aim of this study is to investigate spin transportation in double quantum ring (DQR). We developed an array of DQR to measure the transmission coefficient and analyze the spin transportation through this system in the presence of Rashba spin-orbit interaction (RSOI) and magnetic flux estimated using S-matrix method. In this article, we compute the spin transport and spin-current characteristics numerically as functions of electron energy, angles between the leads, coupling constant of the leads, RSOI, and magnetic flux. Our results suggest that, for typical values of the magnetic flux (ϕ /ϕ0) and Rashba constant (αR), such system can demonstrates many spintronic properties. It is possible to design a new geometry of DQR by incoming electrons polarization in a way to optimize the system to work as a spin-filtering and spin-inverting nano-device with very high efficiency. The results prove that the spin current will strongly modulate with an increase in the magnetic flux and Rashba constant. Moreover it is shown that, when the lead coupling is weak, the perfect spin-inverter does not occur.

Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

Directory of Open Access Journals (Sweden)

J. Sánchez-Barriga

2014-03-01

Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-10-31

In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

Energy Technology Data Exchange (ETDEWEB)

Yang, Luyi [Univ. of California, Berkeley, CA (United States)

2013-05-17

Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstration and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly

Spin storage in quantum dot ensembles and single quantum dots

International Nuclear Information System (INIS)

Heiss, Dominik

2009-01-01

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

Spin storage in quantum dot ensembles and single quantum dots

Energy Technology Data Exchange (ETDEWEB)

Heiss, Dominik

2009-10-15

This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

Directory of Open Access Journals (Sweden)

Zein W. A.

2008-01-01

Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

Science.gov (United States)

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Electron spin resonance scanning tunneling microscope

International Nuclear Information System (INIS)

Guo Yang; Li Jianmei; Lu Xinghua

2015-01-01

It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)

Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

Science.gov (United States)

Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

2012-04-01

In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

Half metallic ferromagnet Pr_0_._9_5Mn_0_._9_3_9O_3 for spin based devices

International Nuclear Information System (INIS)

Santhosh Kumar, B.; Praveen Shankar, N.; Venkateswaran, C.; Manimuthu, P.

2016-01-01

Half Metallic Ferromagnets (HMF) are excellent candidates for spintronics devices due to their unusual 3d and 4s bands. Band theory and first principles calculations strongly predict that Pr based compounds are promising HMF candidates due to their spin hybridisation. Among all Pr based HMF, Pr_0_._9_5Mn_0_._9_3_9O_3 is special because of its pervoskite structure. The different oxidation states of Mn and Pr will enhance the hybridisation of 3d and 4f bands. The present study is experimental effort on the preparation of Pr based compounds

Donor-driven spin relaxation in multivalley semiconductors.

Science.gov (United States)

Song, Yang; Chalaev, Oleg; Dery, Hanan

2014-10-17

The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

Spin-dependent tunneling transport in a lateral magnetic diode

International Nuclear Information System (INIS)

Wang, Yu; Shi, Ying

2012-01-01

Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Science.gov (United States)

Wang, Qingwen; Klochan, Oleh; Hung, Jo-Tzu; Culcer, Dimitrie; Farrer, Ian; Ritchie, David; Hamilton, Alex

Electrically defined semiconductor quantum dots are appealing systems for spin manipulation and quantum information processing. Thanks to the weak hyperfine interaction and the strong spin-orbit interaction, heavy-holes in GaAs are promising candidates for all-electrical spin manipulation. However, making stable quantum dots in GaAs has only become possible recently, mainly because of difficulties in device fabrication and device stability. Here we present electrical transport measurements of heavy-holes in a lateral double quantum dot based on a GaAs /AlxGa1 - x As heterostructure. We observe clear Pauli spin blockade and show that the lifting of the spin blockade by an external magnetic field is extremely anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit interaction demonstrate quantitative agreement with experimental results, which indicates that the observed anisotropy can be explained by the anisotropic hole g-factor and the surface Dresselhaus spin-orbit coupling.

Electrical spin injection and detection in silicon nanowires with axial doping gradient.

Science.gov (United States)

Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy David; Zhang, Mei; Xiong, Peng

2018-06-13

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nano-spintronic devices with quasi-1D semiconductor channels.

Spin transport in oxygen adsorbed graphene nanoribbon

Science.gov (United States)

Kumar, Vipin

2018-04-01

The spin transport properties of pristine graphene nanoribbons (GNRs) have been most widely studied using theoretical and experimental tools. The possibilities of oxidation of fabricated graphene based nano electronic devices may change the device characteristics, which motivates to further explore the properties of graphene oxide nanoribbons (GONRs). Therefore, we present a systematic computational study on the spin polarized transport in surface oxidized GNR in antiferromagnetic (AFM) spin configuration using density functional theory combined with non-equilibrium Green's function (NEGF) method. It is found that the conductance in oxidized GNRs is significantly suppressed in the valance band and the conduction band. A further reduction in the conductance profile is seen in presence of two oxygen atoms on the ribbon plane. This change in the conductance may be attributed to change in the surface topology of the ribbon basal plane due to presence of the oxygen adatoms, where the charge transfer take place between the ribbon basal plane and the oxygen atoms.

Effect of the Heat Flux Density on the Evaporation Rate of a Distilled Water Drop

Directory of Open Access Journals (Sweden)

Ponomarev Konstantin

2016-01-01

Full Text Available This paper presents the experimental dependence of the evaporation rate of a nondeaerated distilled water drop from the heat flux density on the surfaces of non-ferrous metals (copper and brass. A drop was placed on a heated substrate by electronic dosing device. To obtain drop profile we use a shadow optical system; drop symmetry was controlled by a high-speed video camera. It was found that the evaporation rate of a drop on a copper substrate is greater than on a brass. The evaporation rate increases intensively with raising volume of a drop. Calculated values of the heat flux density and the corresponding evaporation rates are presented in this work. The evaporation rate is found to increase intensively on the brass substrate with raising the heat flux density.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

Science.gov (United States)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Quantum Control and Entanglement of Spins in Silicon Carbide

Science.gov (United States)

Klimov, Paul

Over the past several decades silicon carbide (SiC) has matured into a versatile material platform for high-power electronics and optoelectronic and micromechanical devices. Recent advances have also established SiC as a promising host for quantum technologies based on the spin of intrinsic defects, with the potential of leveraging existing device fabrication protocols alongside solid-state quantum control. Among these defects are the divacancies and related color centers, which have ground-state electron-spin triplets with coherence times as long as one millisecond and built-in optical interfaces operating near the telecommunication wavelengths. This rapidly developing field has prompted research into the SiC material host to understand how defect-bound electron spins interact with their surrounding nuclear spin bath. Although nuclear spins are a major source of decoherence in color-center spin systems, they are also a valuable resource since they can have coherence times that are orders of magnitude longer than electron spins. In this talk I will discuss our recent efforts to interface defect-bound electron spins in SiC with the nuclear spins of naturally occurring 29Si and 13C isotopic defects. I will discuss how the hyperfine interaction can be used to strongly initialize them, to coherently control them, to read them out, and to produce genuine electron-nuclear ensemble entanglement, all at ambient conditions. These demonstrations motivate further research into spins in SiC for prospective quantum technologies. In collaboration with A. Falk, D. Christle, K. Miao, H. Seo, V. Ivady, A. Gali, G. Galli, and D. D. Awschalom. This research was supported by the AFOSR, the NSF DMR-1306300, and the NSF Materials Research Science and Engineering Center.

Thermoelectric performance of spin Seebeck effect in Fe3O4/Pt-based thin film heterostructures

Directory of Open Access Journals (Sweden)

R. Ramos

2016-10-01

Full Text Available We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect.

Comparison of additive amount used in spin-coated and roll-coated organic solar cells

DEFF Research Database (Denmark)

Cheng, Pei; Lin, Yuze; Zawacka, Natalia Klaudia

2014-01-01

All-polymer and polymer/fullerene inverted solar cells were fabricated by spin-coating and roll-coating processes. The spin-coated small-area (0.04 cm(2)) devices were fabricated on indium tin oxide (ITO) coated glass substrates in nitrogen. The roll-coated large-area (1.0 cm(2)) devices were...

Dynamics of domain wall driven by spin-transfer torque

International Nuclear Information System (INIS)

Chureemart, P.; Evans, R. F. L.; Chantrell, R. W.

2011-01-01

Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.

Investigation of spin-polarized transport in GaAs nanostructures

Energy Technology Data Exchange (ETDEWEB)

Tierney, B D; Day, T E; Goodnick, S M [Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706 (United States)], E-mail: brian.tierney@asu.edu

2008-03-15

A spin field effect transistor (spin-FET) has been fabricated that employs nanomagnets as components of quantum point contact (QPC) structures to inject spin-polarized carriers into the high-mobility two-dimensional electron gas (2DEG) of a GaAs quantum well and to detect them. A centrally-placed non-magnetic Rashba gate controls both the density of electrons in the 2DEG and the electronic spin precession. Initial results are presented for comparable device structures modeled with an ensemble Monte Carlo (EMC) method. In the EMC the temporal and spatial evolution of the ensemble carrier spin polarization is governed by a spin density matrix formalism that incorporates the Dresselhaus and Rashba contributions to the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures from 77-300K.

Drop behavior in acoustic standing waves; Teizaihachu ni okeru ekiteki no kyodo

Energy Technology Data Exchange (ETDEWEB)

Kamimura, H. [National Aerospace Laboratory, Tokyo (Japan); Yamanaka, T. [Yokohama National University, Yokohama (Japan)

1997-10-01

When new materials, such as those for space shuttles, are developed, it is necessary to hold then in a non-contacting manner. Described herein is behavior of drops in a holding device which utilizes acoustic radiation pressure. When an object sufficiently small as compared with wavelength of a sound wave is placed in acoustic standing waves, it is subjected to acoustic radiation pressure. Chandrasekahr developed the theory on the stability of a rotating drop by equating the entire mechanical energy of a drop with its surface energy. This theory, based on the assumption of symmetric surface energy, is incapable of theoretically dealing with multi-lobed waves evolved by surface tension. In this study, multi-lobed waves excited by sound waves in a rotating drop are analytically found without assuming symmetry of drop surface energy. The multi-lobe waves are first found on the assumption that the acoustic radiation pressure around a drop is constant. Then, the effects of the deformed drop on the radiation pressure around the drop are considered. In addition, the equation for the relationship between the radiation pressure and a drop that becomes oblate due to the radiation pressure is obtained. The theoretically derived results by this equation are in good agreement with the observed results by the ground and flight tests. 17 refs., 18 figs.

Spin Injection, Manipulation, and Detection, in InAs Nanodevices

Science.gov (United States)

Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

2008-03-01

In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

Immense Magnetic Response of Exciplex Light Emission due to Correlated Spin-Charge Dynamics

Science.gov (United States)

Wang, Yifei; Sahin-Tiras, Kevser; Harmon, Nicholas J.; Wohlgenannt, Markus; Flatté, Michael E.

2016-01-01

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFEs) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFEs if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in coevaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here, we show that exciplex recombination in blends exhibiting thermally activated delayed fluorescence produces MFEs in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device's current-voltage response curve by device conditioning. Both of these immense MFEs are the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFEs in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFEs in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. Magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the thermally activated delayed fluorescence process.

Nanopatterning spin-textures: A route to reconfigurable magnonics

Directory of Open Access Journals (Sweden)

E. Albisetti

2017-05-01

Full Text Available Magnonics is envisioned to enable highly efficient data transport and processing, by exploiting propagating perturbations in the spin-texture of magnetic materials. Despite the demonstrations of a plethora of proof-of-principle devices, the efficient excitation, transport and manipulation of spin-waves at the nanoscale is still an open challenge. Recently, we demonstrated that the spin-wave excitation and propagation can be controlled by nanopatterning reconfigurable spin-textures in a continuous exchange biased ferromagnetic film. Here, we show that by patterning 90° stripe-shaped magnetic domains, we spatially modulate the spin-wave excitation in a continuous film, and that by applying an external magnetic field we can reversibly “switch-off” the spin-wave excitation. This opens the way to the use of nanopatterned spin-textures, such as domains and domain walls, for exciting and manipulating magnons in reconfigurable nanocircuits.

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

Science.gov (United States)

Cornelissen, L. J.; Liu, J.; van Wees, B. J.; Duine, R. A.

2018-03-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6 %/mA at T =250 K . Finite element modeling shows that this could be increased to well above 10 %/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Drop Impact Dynamics with Sessile Drops and Geometries: Spreading, Jetting, and Fragmentation

Science.gov (United States)

Tilger, Christopher F.

The tendency of surface tension to cause small parcels of fluid to form into drops allows convenient packaging, transport, dispersal of liquid phase matter. Liquid drop impacts with solids, liquids, and other drops have realized and additional future applications in biological, manufacturing, heat transfer, and combustion systems. Experiments were conducted to investigate the dynamics of multiple drop collisions, rather than the most-studied phenomenon of single drop impacts. Additional drop impacts were performed on rigid hemispheres representing sessile drops, angled substrates, and into the vertex of two tilted surfaces arranged into a vee shape. A qualitative inspection of drop-sessile drop impacts shows distinct post-impact shapes depending on the offset distance between the drops. At intermediate offset distances, distinct jets issue from the overlap region between the two drops projected areas. These jets are observed to reach their maximum extent at a critical offset distance ratio, epsilon epsilon ˜ 0.75-0.80, with substrate contact angle and W e having a lesser effect. Capillary waves that traverse the sessile drop after collision cause a lower aspect ratio liquid column to emanate from the sessile drop opposite the impact. In order to better understand the jetting phenomenon seen in the offset drop-sessile drop impacts, simpler solid geometries are investigated that elicit a similar behavior. Solid hemispheres do not show the singular jetting observed in the fluidic case, however, a simple vee formed by two intersection planar substrates do jet in a similar fashion to the fluidic case. A geometric model with partnered experiments is developed to describe the bisymmetric spread of an impacting drop on an angled substrate. This geometric model is used to guide a time of arrival based model for various features of the drop impact, which is used to predict jetting in various vee channel experiments.

Toward spin-based Magneto Logic Gate in Graphene

Science.gov (United States)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

Shell structure at high spin and the influence on nuclear shapes

International Nuclear Information System (INIS)

Khoo, T.L.; Chowdhury, P.; Ahmad, I.

1982-01-01

Nuclear structure at high spin is influenced by a combination of liquid-drop and shell-structure effects. For N 90. The competition between oblate and prolate driving effects leads to a prolate-to-oblate shape transition in 154 Dy 88 . The role of rotation-aligned configurations in the shape change is discussed

Flow rate-pressure drop relation for deformable shallow microfluidic channels

Science.gov (United States)

Christov, Ivan C.; Cognet, Vincent; Shidhore, Tanmay C.; Stone, Howard A.

2018-04-01

Laminar flow in devices fabricated from soft materials causes deformation of the passage geometry, which affects the flow rate--pressure drop relation. For a given pressure drop, in channels with narrow rectangular cross-section, the flow rate varies as the cube of the channel height, so deformation can produce significant quantitative effects, including nonlinear dependence on the pressure drop [{Gervais, T., El-Ali, J., G\\"unther, A. \\& Jensen, K.\\ F.}\\ 2006 Flow-induced deformation of shallow microfluidic channels.\\ \\textit{Lab Chip} \\textbf{6}, 500--507]. Gervais et. al. proposed a successful model of the deformation-induced change in the flow rate by heuristically coupling a Hookean elastic response with the lubrication approximation for Stokes flow. However, their model contains a fitting parameter that must be found for each channel shape by performing an experiment. We present a perturbation approach for the flow rate--pressure drop relation in a shallow deformable microchannel using the theory of isotropic quasi-static plate bending and the Stokes equations under a lubrication approximation (specifically, the ratio of the channel's height to its width and of the channel's height to its length are both assumed small). Our result contains no free parameters and confirms Gervais et. al.'s observation that the flow rate is a quartic polynomial of the pressure drop. The derived flow rate--pressure drop relation compares favorably with experimental measurements.

The classical and quantum dynamics of molecular spins on graphene

Science.gov (United States)

Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

2016-02-01

Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic and quantum computing devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics and electrical spin manipulation. However, the influence of the graphene environment on the spin systems has yet to be unravelled. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets on graphene. Whereas the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly developed model. Coupling to Dirac electrons introduces a dominant quantum relaxation channel that, by driving the spins over Villain’s threshold, gives rise to fully coherent, resonant spin tunnelling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin manipulation in graphene nanodevices.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Endurance of lead-free assembly under board level drop test and thermal cycling

Energy Technology Data Exchange (ETDEWEB)

Xia Yanghua [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)], E-mail: xia_yanghua@hotmail.com; Xie Xiaoming [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2008-06-12

The reliability of lead-free electronic assemblies under board level drop test and thermal cycling was investigated. TSOP (thin small outline package) devices with FeNi leads were reflow soldered on FR4 PCB (printed circuit board) with Sn3.0Ag0.5Cu (wt%) solder. The effects of different PCB finishes (organic solderability preservative (OSP) and electroless nickel immersion gold (ENIG)) on the reliability performance were studied. The results show that the assemblies with ENIG finishes reveal better reliability performance than its OSP counterparts under drop test, however, the OSP samples outperform those with ENIG finishes under thermal cycling. The failure mechanism is different under these two test conditions: the solder joints fracture into the intermetallic compounds (IMCs) layer under drop test, and cracks initiate in the bulk solder under thermal cycling. The surface finishes have an effect on the failure mode. The propagation of crack in the ENIG case is along the device/solder interface, while in the case of OSP, the crack extends parallel to the solder/PCB interface.

Fiscal 2000 pioneering research on the spintronic device basic technology; 2000 nendo spintronic soshi kiban gijutsu sendo kenkyu hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Researchers specializing in technologies of magnetism or semiconductor were drafted from the industrial, official, and academic circles, who conducted hearings, patent investigations, overseas surveys, and the like, concerning spintronics. Collected in this report are the outline of the research and development of spintronic device technology, its current state and tasks and its importance from social and economic viewpoints, and the strategy that Japan should follow in the research and development of the technology. Important spintronic device technologies now attracting attention are mentioned below. The nonvolatile magnetic memory device MRAM (magnetic random access memory) is supposed to be the device which will enjoy practical application first among like devices. It is expected that the spin conduction device will lead to novel functions when the possibilities of the spin-dependent electric conduction phenomenon are further pursued. It is hoped that the spin optical device will be used as a light isolator, light spin logic device, field induced variable wavelength laser device, spin laser device, high-speed light switch, and so forth. It is necessary to watch the development of a spin-aided quantum computer which is still at the stage of basic study. (NEDO)

Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/Al x Ga1-x As nanostructure modulated by spin-orbit couplings

Science.gov (United States)

Lu, Mao-Wang; Chen, Sai-Yan; Zhang, Gui-Lian; Huang, Xin-Hong

2018-04-01

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure—a magnetically confined GaAs/Al x Ga1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.

Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/Al x Ga1-x As nanostructure modulated by spin-orbit couplings.

Science.gov (United States)

Lu, Mao-Wang; Chen, Sai-Yan; Zhang, Gui-Lian; Huang, Xin-Hong

2018-04-11

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al x Ga 1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Science.gov (United States)

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

2013-08-27

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

Pressure and Temperature Sensors Using Two Spin Crossover Materials

Science.gov (United States)

Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

2016-01-01

The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices. PMID:26848663

Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

Directory of Open Access Journals (Sweden)

Ahmed Kenawy

2017-05-01

Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

Pressure and Temperature Sensors Using Two Spin Crossover Materials.

Science.gov (United States)

Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

2016-02-02

The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

Pressure and Temperature Sensors Using Two Spin Crossover Materials

Directory of Open Access Journals (Sweden)

Catalin-Maricel Jureschi

2016-02-01

Full Text Available The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)

2017-06-15

Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

Wiggler as spin rotators for RHIC

International Nuclear Information System (INIS)

Luccio, A.; Conte, M.

1993-01-01

The spin of a polarized particle in a circular accelerator can be rotated with an arrangement of dipoles with field mutually perpendicular and perpendicular to the orbit. To achieve spin rotation, a given field integral value is required. The device must be designed in a way that the particle orbit is distorted as little as possible. It is shown that wigglers with many periods are suitable to achieve spin rotation with minimum orbit distortions. Wigglers are also more compact than more established structures and will use less electric power. Additional advantages include their use for non distructive beam diagnostics. Results are given for the Relativistic Heavy Ion Collider (RHIC) in the polarized proton mode

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Influence of spin methods on the performance of polymer light-emitting devices

International Nuclear Information System (INIS)

Liu Chen; Zou Xuecheng; Yin Sheng; Zhang Wuxing

2004-01-01

Using the doped polymeric system composed of host poly(N-vinylcarbazole) and dopant coumarin 6, the morphology, phase distribution, and polymer molecular conformation of polymer films were investigated with optical and atomic force microscopy, UV-visible absorption spectra, and Fourier transform infrared reflectance spectroscopy. Results show that the film morphology and dopant distribution in the polymer films cast with the conventional method are dependent on the positions of polymer films. To avoid this negative effect, a new spin method was put forward by locating the specimen at an appropriate distance from the center of the spin plate during spin casting. It is found that polymer films prepared with the new method are more uniform and their electroluminescence performances are independent of the positions

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

International Nuclear Information System (INIS)

Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

2015-01-01

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics

Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

Science.gov (United States)

Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

2015-07-01

We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

Science.gov (United States)

Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

2012-09-01

We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Evaluation of an air spinning process to produce tailored biosynthetic nanofibre scaffolds

International Nuclear Information System (INIS)

Sabbatier, Gad

2014-01-01

We optimised the working parameters of an innovative air spinning device to produce nanofibrous polymer scaffolds for tissue engineering applications. Scanning electron microscopy was performed on the fibre scaffolds which were then used to identify various scaffold morphologies based on the ratio of surface occupied by the polymer fibres on that covered by the entire polymer scaffold assembly. Scaffolds were then produced with the spinning experimental parameters, resulting in 90% of fibres in the overall polymer construct, and were subsequently used to perform a multiple linear regression analysis to highlight the relationship between nanofibre diameter and the air spinning parameters. Polymer solution concentration was deemed as the most significant parameter to control fibre diameter during the spinning process, despite interactions between experimental parameters. Based on these findings, viscosity measurements were performed to clarify the effect of the polymer solution property on scaffold morphology. - Highlights: • An air spinning device for nanofibre scaffold production was optimised. • Relationships between fibre diameter and spinning parameters were established. • Polymer solution concentration was the most significant parameter. • Interactions between experimental parameters also influence the spinning process. • Nanofibres were formed due to polymer chain entanglements

Spin-current-controlled modulation of the magnon spin conductance in a three-terminal magnon transistor

NARCIS (Netherlands)

Cornelissen, L. J.; Liu, J.; van Wees, B.J.; Duine, R. A.

2018-01-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The

Rapid characterizing of ferromagnetic materials using spin rectification

International Nuclear Information System (INIS)

Fan, Xiaolong; Wang, Wei; Wang, Yutian; Zhou, Hengan; Rao, Jinwei; Zhao, Xiaobing; Gao, Cunxu; Xue, Desheng; Gui, Y. S.; Hu, C.-M.

2014-01-01

Spin rectification is a powerful tool for dc electric detections of spin dynamics and electromagnetic waves. Technically, elaborately designed on-chip microwave devices are needed in order to realize that effect. In this letter, we propose a rapid characterizing approach based on spin rectification. By directly sending dynamic current into ferromagnetic films with stripe shape, resonant dc voltages can be detected along the longitudinal or transversal directions. As an example, Fe (010) films with precise crystalline structure and magnetic parameters were used to testify the reliability of such method. We investigated not only the dynamic parameters and the precise anisotropy constants of the Fe crystals but also the principle of spin rectification in this method

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Science.gov (United States)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Playing with Water Drops: From Wetting to Optics through Electrostatics

Science.gov (United States)

Domps, A.; Roques-Carmes, T.

2011-01-01

We present a consistent series of activities, including experiments and basic computational studies, investigating the shape and optical properties of water drops in connection with novel technological devices. Most of the work can be carried out with simple teaching equipment and is well suited to undergraduate students. Firstly, we show how the…

Spin-Polarized Hybridization at the interface between different 8-hydroxyquinolates and the Cr(001) surface

Science.gov (United States)

Wang, Jingying; Deloach, Andrew; Dougherty, Daniel B.; Dougherty Lab Team

Organic materials attract a lot of attention due to their promising applications in spintronic devices. It is realized that spin-polarized metal/organic interfacial hybridization plays an important role to improve efficiency of organic spintronic devices. Hybridized interfacial states help to increase spin injection at the interface. Here we report spin-resolved STM measurements of single tris(8-hydroxyquinolinato) aluminum molecules adsorbed on the antiferromagnetic Cr(001). Our observations show a spin-polarized interface state between Alq3 and Cr(001). Tris(8-hydroxyquinolinato) chromium has also been studied and compared with Alq3, which exhibits different spin-polarized hybridization with the Cr(001) surface state than Alq3. We attribute the differences to different character of molecular orbitals in the two different quinolates.

Cavity Mediated Manipulation of Distant Spin Currents Using a Cavity-Magnon-Polariton.

Science.gov (United States)

Bai, Lihui; Harder, Michael; Hyde, Paul; Zhang, Zhaohui; Hu, Can-Ming; Chen, Y P; Xiao, John Q

2017-05-26

Using electrical detection of a strongly coupled spin-photon system comprised of a microwave cavity mode and two magnetic samples, we demonstrate the long distance manipulation of spin currents. This distant control is not limited by the spin diffusion length, instead depending on the interplay between the local and global properties of the coupled system, enabling systematic spin current control over large distance scales (several centimeters in this work). This flexibility opens the door to improved spin current generation and manipulation for cavity spintronic devices.

Spin-orbit torques in magnetic bilayers

Science.gov (United States)

Haney, Paul

2015-03-01

Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using a combination of approaches, from drift-diffusion to Boltzmann transport to first principles methods, we explore the relative contributions to the dynamics from these different effects. We additionally propose that the transverse spin current is locally enhanced over its bulk value in the vicinity of an interface which is oriented normal to the charge current direction.

OpenDrop: An Integrated Do-It-Yourself Platform for Personal Use of Biochips

Directory of Open Access Journals (Sweden)

Mirela Alistar

2017-05-01

Full Text Available Biochips, or digital labs-on-chip, are developed with the purpose of being used by laboratory technicians or biologists in laboratories or clinics. In this article, we expand this vision with the goal of enabling everyone, regardless of their expertise, to use biochips for their own personal purposes. We developed OpenDrop, an integrated electromicrofluidic platform that allows users to develop and program their own bio-applications. We address the main challenges that users may encounter: accessibility, bio-protocol design and interaction with microfluidics. OpenDrop consists of a do-it-yourself biochip, an automated software tool with visual interface and a detailed technique for at-home operations of microfluidics. We report on two years of use of OpenDrop, released as an open-source platform. Our platform attracted a highly diverse user base with participants originating from maker communities, academia and industry. Our findings show that 47% of attempts to replicate OpenDrop were successful, the main challenge remaining the assembly of the device. In terms of usability, the users managed to operate their platforms at home and are working on designing their own bio-applications. Our work provides a step towards a future in which everyone will be able to create microfluidic devices for their personal applications, thereby democratizing parts of health care.

Add/drop filters based on SiC technology for optical interconnects

International Nuclear Information System (INIS)

Vieira, M; Vieira, M A; Louro, P; Fantoni, A; Silva, V

2014-01-01

In this paper we demonstrate an add/drop filter based on SiC technology. Tailoring of the channel bandwidth and wavelength is experimentally demonstrated. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible range. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure. Several monochromatic pulsed lights, separately or in a polychromatic mixture illuminated the device. Independent tuning of each channel is performed by steady state violet bias superimposed either from the front and back sides. Results show that, front background enhances the light-to-dark sensitivity of the long and medium wavelength channels and quench strongly the others. Back violet background has the opposite behaviour. This nonlinearity provides the possibility for selective removal or addition of wavelengths. An optoelectronic model is presented and explains the light filtering properties of the add/drop filter, under different optical bias conditions

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

International Nuclear Information System (INIS)

Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

2007-01-01

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2007-10-15

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

Science.gov (United States)

Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

2017-08-01

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

Science.gov (United States)

Ulloa, Camilo; Duine, R. A.

2018-04-01

Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

Spin effects in high- and low-field magnetotransport experiments in semimagnetic Cd1-xMnxTe heterostructures

International Nuclear Information System (INIS)

Betthausen, Christian

2012-01-01

Within the framework of this PhD we report on the very first observation of the fractional Quantum Hall Effect (FQHE) in both, a non-magnetic CdTe and a semimagnetic Cd 1-x Mn x Te quantum well device. To our knowledge, this constitutes the first demonstration of this effect in the II-VI material family. Furthermore, our results reveal that the formation of fractional Quantum Hall states is not inhibited by the presence of magnetic impurities in a quantum structure. The second part of this thesis addresses an alternative route to realize efficient spin transistor action. Typically, spin transistor designs relying on spin-orbit interaction principally suffer from low signal levels due to limitations in spin injection efficiency and fast spin decay. Here we present an approach to realize spin transistor action in systems where spin information is protected by propagating it adiabatically. This is achieved by inducing tunable diabatic Landau-Zener transitions that lead to a backscattering of spins and hence allow controlling the transmission of spin-polarized charge carriers through the device, i.e. switching between 'on' and 'off' states. We demonstrate the validity of our approach in a Cd 1-x Mn x Te diluted magnetic semiconductor quantum well structure where efficient spin transport is observed over device distances of 50 μm. In contrast to other spin transistor designs we find that our concept is exceptionally tolerant against disorder.