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Sample records for spinning drop devices

  1. Device for making liquid drops

    International Nuclear Information System (INIS)

    Yamada, Masao; Fukuda, Fumito; Nishikawa, Masana; Ishii, Takeshi.

    1976-01-01

    Object: To provide a device for producing liquid drops in the form of liquefied gases indispensable to make deuterium and tritium ice pellets used as a fusion fuel in a tokamak type fusion reactor. Structure: First, pressure P 1 at the upper surface of liquefied gas in a container and outlet pressure P 2 of a nozzle disposed at the lower part of the container are adjusted into the state of P 1 >= P 2 , and it is preset so that even under such conditions, the liquefied gas from the nozzle is not naturally flown out. Next, a vibration plate disposed within the container is rapidly downwardly advanced toward the nozzle through a predetermined distance. As a result, pressure of the liquefied gas within a depression under the vibration plate rises instantaneously or in a pulse fashion to dissatisfy the aforesaid set condition whereby the liquefied gas may be flown out from the nozzle in the form of liquid drops. In accordance with the present device, it is possible to produce a suitable number of drops at a suitable point. (Yoshihara, H.)

  2. First drop dissimilarity in drop-on-demand inkjet devices

    International Nuclear Information System (INIS)

    Famili, Amin; Palkar, Saurabh A.; Baldy, William J. Jr.

    2011-01-01

    As inkjet printing technology is increasingly applied in a broader array of applications, careful characterization of its method of use is critical due to its inherent sensitivity. A common operational mode in inkjet technology known as drop-on-demand ejection is used as a way to deliver a controlled quantity of material to a precise location on a target. This method of operation allows ejection of individual or a sequence (burst) of drops based on a timed trigger event. This work presents an examination of sequences of drops as they are ejected, indicating a number of phenomena that must be considered when designing a drop-on-demand inkjet system. These phenomena appear to be driven by differences between the first ejected drop in a burst and those that follow it and result in a break-down of the linear relationship expected between driving amplitude and drop mass. This first drop, as quantified by high-speed videography and subsequent image analysis, can be different in morphology, trajectory, velocity, and volume from subsequent drops within a burst. These findings were confirmed orthogonally by both volume and mass measurement techniques which allowed quantitation down to single drops.

  3. A molecular spin-photovoltaic device.

    Science.gov (United States)

    Sun, Xiangnan; Vélez, Saül; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Parui, Subir; Zhu, Xiangwei; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

    2017-08-18

    We fabricated a C 60 fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  4. Topological Material-Based Spin Devices

    Science.gov (United States)

    Zhang, Minhao; Wang, Xuefeng

    Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

  5. Spin transport and spin torque in antiferromagnetic devices

    Science.gov (United States)

    Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

    2018-03-01

    Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

  6. Flexible spin-orbit torque devices

    International Nuclear Information System (INIS)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef

    2015-01-01

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging

  7. Flexible spin-orbit torque devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-12-21

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

  8. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  9. Spin state determination using Stern-Gerlach device

    International Nuclear Information System (INIS)

    Shirokov, M.I.

    1996-01-01

    The well-known Stern-Gerlach device is proposed here for determination of a particle spin state instead of using it for measurement of spin observables. It is shown that measurement of particle momentum distributions (before and after the action of the device magnetic field) allows one to determine the particle initial spin state in the case of an arbitrary spin value. It is demonstrated that one cannot use for this purpose the usual treatment of the Stern-Gerlach experiment based on the entanglement of spin and spatial states. 11 refs

  10. Spin thermoelectric effects in organic single-molecule devices

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.L.; Wang, M.X.; Qian, C.; Hong, X.K.; Zhang, D.B.; Liu, Y.S.; Yang, X.F., E-mail: xfyang@cslg.edu.cn

    2017-05-25

    Highlights: • A stronger spin thermoelectric performance in a polyacetylene device is observed. • For the antiferromagnetic (AFM) ordering, a transport gap is opened. Thus the thermoelectric effects are largely enhanced. - Abstract: The spin thermoelectric performance of a polyacetylene chain bridging two zigzag graphene nanoribbons (ZGNRs) is investigated based on first principles method. Two different edge spin arrangements in ZGNRs are considered. For ferromagnetic (FM) ordering, transmission eigenstates with different spin indices distributed below and above Fermi level are observed, leading directly to a strong spin thermoelectric effect in a wide temperature range. With the edge spins arranged in the antiferromagnetic (AFM) ordering, an obvious transport gap appears in the system, which greatly enhances the thermoelectric effects. The presence of a small spin splitting also induces a spin thermoelectric effect greater than the charge thermoelectric effect in certain temperature range. In general, the single-molecule junction exhibits the potential to be used for the design of perfect thermospin devices.

  11. Applications of a high temperature sessile drop device

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, B; Eisenmenger-Sittner, C [Vienna University of Technology, Insitute of Solid State Physics E-138, Wiedner Hauptstrasse 8-10, A-1040 Vienna (Austria); Worbs, P [Max-Planck-Institut fuer Plasmaphysik, Bereich Materialforschung, Boltzmannstrasse 2, D-85748 Garching (Germany)], E-mail: bernhard.schwarz@ifp.tuwien.ac.at

    2008-03-01

    The wettability of a liquid metal on a solid surface is of great technological interest for the industry (soldering, brazing, infiltration) as well as for fundamental research (diffusion, chemical reaction, intermetallic phases). The characterization of wetting is done by measuring the contact angle at the triple line of the liquid on the solid. A High Temperature Sessile Drop Device (HTSDD) was constructed and several applications were tested: (i) a wettability study of a copper-based brazing alloy (Cu-ABA) on TiN{sub x} coatings with different stoichiometries. The data derived from the HTSDD show that the reduction of the nitrogen content in the TiN coating reduces the time for reaching the final contact angle. Also for substoichiometric TiC a similar behaviour is predicted in literature. (ii) The liquid surface energy of molten metals can be estimated from the curvature of flattened droplets due to the influence of gravity. Two models were used for the calculation of the liquid surface energy of different liquid metals. (iii) From the droplet radius vs. time curves it is possible to distinguish between two different reactive wetting regimes - the diffusion and the reaction controlled reactive wetting. The beginning of this research topic will be discussed.

  12. Energy efficient hybrid computing systems using spin devices

    Science.gov (United States)

    Sharad, Mrigank

    Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.

  13. All-spin logic operations: Memory device and reconfigurable computing

    Science.gov (United States)

    Patra, Moumita; Maiti, Santanu K.

    2018-02-01

    Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of both inputs and outputs are described by spin state only, circumventing spin-to-charge conversion at every stage as often used in conventional devices with the inclusion of extra hardware that can eventually diminish the efficiency. All possible logic functions can be engineered from a single device without redesigning the circuit which certainly offers the opportunities of designing new generation spintronic devices. Moreover, we also discuss the utilization of the present model as a memory device and suitable computing operations with proposed experimental setups.

  14. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  15. Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

    Science.gov (United States)

    Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

    2017-09-01

    In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

  16. Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

    Directory of Open Access Journals (Sweden)

    M. Ciorga

    2011-06-01

    Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

  17. Spin Coherence in Silicon-based Quantum Structures and Devices

    Science.gov (United States)

    2017-08-31

    Using electron spin resonance (ESR) to measure the den- sity of shallow traps, we find that the two sets of devices are nearly identical , indicating...experiments which cannot utilize a clock transition or a field-cancelling decoherence-free subspace. Our approach was to lock the microwave source driving...the electron spins to a strong nuclear spin signal. In our initial experiments we locked to the proton signal in a water cell. However, the noise in

  18. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    Science.gov (United States)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  19. Spin-Caloritronic Batteries

    DEFF Research Database (Denmark)

    Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang

    2017-01-01

    The thermoelectric performance of a topological energy converter is analyzed. The H-shaped device is based on a combination of transverse topological effects involving the spin: the inverse spin Hall effect and the spin Nernst effect. The device can convert a temperature drop in one arm into an e...

  20. A device for simultaneous spin analysis of ultracold neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Afach, S. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Paul Scherrer Institute, Villigen-PSI (Switzerland); Jena University Hospital, Hans Berger Department of Neurology, Jena (Germany); Ban, G.; Lefort, T.; Lemiere, Y.; Naviliat-Cuncic, O.; Quemener, G. [Universite de Caen, CNRS/IN2P3, LPC Caen ENSICAEN, Caen (France); Bison, G.; Chowdhuri, Z.; Daum, M.; Henneck, R.; Lauss, B.; Mtchedlishvili, A.; Schmidt-Wellenburg, P.; Zsigmond, G. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Bodek, K.; Rawlik, M.; Rozpedzik, D.; Zejma, J. [Jagiellonian University, Marian Smoluchowski Institute of Physics, Cracow (Poland); Fertl, M.; Franke, B.; Kirch, K.; Komposch, S. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Paul Scherrer Institute, Villigen-PSI (Switzerland); Geltenbort, P. [Institut Laue-Langevin, Grenoble (France); Grujic, Z.D.; Kasprzak, M.; Weis, A. [University of Fribourg, Physics Department, Fribourg (Switzerland); Hayen, L.; Severijns, N.; Wursten, E. [Katholieke Universiteit Leuven, Instituut voor Kernen Stralingsfysica, Leuven (Belgium); Helaine, V. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Universite de Caen, CNRS/IN2P3, LPC Caen ENSICAEN, Caen (France); Kermaidic, Y.; Pignol, G.; Rebreyend, D. [Universite Grenoble Alpes, CNRS/IN2P3, LPSC, Grenoble (France); Kozela, A. [Henryk Niedwodniczanski Institute for Nuclear Physics, Cracow (Poland); Krempel, J.; Piegsa, F.M. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Prashanth, P.N. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Katholieke Universiteit Leuven, Instituut voor Kernen Stralingsfysica, Leuven (Belgium); Ries, D. [Paul Scherrer Institute, Villigen-PSI (Switzerland); Jena University Hospital, Hans Berger Department of Neurology, Jena (Germany); Roccia, S. [Universite Paris Sud, CNRS/IN2P3, CSNSM, Orsay campus (France); Wyszynski, G. [Institute for Particle Physics, ETH Zuerich, Zuerich (Switzerland); Jagiellonian University, Marian Smoluchowski Institute of Physics, Cracow (Poland)

    2015-11-15

    We report on the design and first tests of a device allowing for measurement of ultracold neutrons polarisation by means of the simultaneous analysis of the two spin components. The device was developed in the framework of the neutron electric dipole moment experiment at the Paul Scherrer Institute. Individual parts and the entire newly built system have been characterised with ultracold neutrons. The gain in statistical sensitivity obtained with the simultaneous spin analyser is (18.2 ± 6.1) % relative to the former sequential analyser under nominal running conditions. (orig.)

  1. Strain-Induced Spin-Resonance Shifts in Silicon Devices

    Science.gov (United States)

    Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

    2018-04-01

    In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

  2. Magnetic field devices for neutron spin transport and manipulation in precise neutron spin rotation measurements

    Energy Technology Data Exchange (ETDEWEB)

    Maldonado-Velázquez, M. [Posgrado en Ciencias Físicas, Universidad Nacional Autónoma de México, 04510 (Mexico); Barrón-Palos, L., E-mail: libertad@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 (Mexico); Crawford, C. [University of Kentucky, Lexington, KY 40506 (United States); Snow, W.M. [Indiana University, Bloomington, IN 47405 (United States)

    2017-05-11

    The neutron spin is a critical degree of freedom for many precision measurements using low-energy neutrons. Fundamental symmetries and interactions can be studied using polarized neutrons. Parity-violation (PV) in the hadronic weak interaction and the search for exotic forces that depend on the relative spin and velocity, are two questions of fundamental physics that can be studied via the neutron spin rotations that arise from the interaction of polarized cold neutrons and unpolarized matter. The Neutron Spin Rotation (NSR) collaboration developed a neutron polarimeter, capable of determining neutron spin rotations of the order of 10{sup −7} rad per meter of traversed material. This paper describes two key components of the NSR apparatus, responsible for the transport and manipulation of the spin of the neutrons before and after the target region, which is surrounded by magnetic shielding and where residual magnetic fields need to be below 100 μG. These magnetic field devices, called input and output coils, provide the magnetic field for adiabatic transport of the neutron spin in the regions outside the magnetic shielding while producing a sharp nonadiabatic transition of the neutron spin when entering/exiting the low-magnetic-field region. In addition, the coils are self contained, forcing the return magnetic flux into a compact region of space to minimize fringe fields outside. The design of the input and output coils is based on the magnetic scalar potential method.

  3. Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

    Science.gov (United States)

    Bhat, Shwetha G.; Kumar, P. S. Anil

    2016-12-01

    Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (ΔV) in semiconductor is found to be associated with a drastic increment in ΔV in Fe3O4 based devices for temperature metal-to-insulator transition of Fe3O4 at T V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T V has to be reinvestigated.

  4. Controllable spin-charge transport in strained graphene nanoribbon devices

    Energy Technology Data Exchange (ETDEWEB)

    Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-09-21

    We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

  5. Increased drop formation frequency via reduction of surfactant interactions in flow-focusing microfluidic devices.

    Science.gov (United States)

    Josephides, Dimitris N; Sajjadi, Shahriar

    2015-01-27

    Glass capillary based microfluidic devices are able to create extremely uniform droplets, when formed under the dripping regime, at low setup costs due to their ease of manufacture. However, as they are rarely parallelized, simple methods to increase droplet production from a single device are sought. Surfactants used to stabilize drops in such systems often limit the maximum flow rate that highly uniform drops can be produced due to the lowering interfacial tension causing jetting. In this paper we show that by simple design changes we can limit the interactions of surfactants and maximize uniform droplet production. Three flow-focused configurations are explored: a standard glass capillary device (consisting of a single round capillary inserted into a square capillary), a nozzle fed device, and a surfactant shielding device (both consisting of two round capillaries inserted into either end of a square capillary). In principle, the maximum productivity of uniform droplets is achieved if surfactants are not present. It was found that surfactants in the standard device greatly inhibit droplet production by means of interfacial tension lowering and tip-streaming phenomena. In the nozzle fed configuration, surfactant interactions were greatly limited, yielding flow rates comparable to, but lower than, a surfactant-free system. In the surfactant shielding configuration, flow rates were equal to that of a surfactant-free system and could make uniform droplets at rates an order of magnitude above the standard surfactant system.

  6. Spin-splitting in p-type Ge devices

    Energy Technology Data Exchange (ETDEWEB)

    Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-08-28

    Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

  7. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  8. A programmable and portable NMES device for drop foot correction and blood flow assist applications.

    Science.gov (United States)

    Breen, Paul P; Corley, Gavin J; O'Keeffe, Derek T; Conway, Richard; Olaighin, Gearóid

    2009-04-01

    The Duo-STIM, a new, programmable and portable neuromuscular stimulation system for drop foot correction and blood flow assist applications is presented. The system consists of a programmer unit and a portable, programmable stimulator unit. The portable stimulator features fully programmable, sensor-controlled, constant-voltage, dual-channel stimulation and accommodates a range of customized stimulation profiles. Trapezoidal and free-form adaptive stimulation intensity envelope algorithms are provided for drop foot correction applications, while time dependent and activity dependent algorithms are provided for blood flow assist applications. A variety of sensor types can be used with the portable unit, including force sensitive resistor-based foot switches and MEMS-based accelerometer and gyroscope devices. The paper provides a detailed description of the hardware and block-level system design for both units. The programming and operating procedures for the system are also presented. Finally, functional bench test results for the system are presented.

  9. Spin wave absorber generated by artificial surface anisotropy for spin wave device network

    Directory of Open Access Journals (Sweden)

    Naoki Kanazawa

    2016-09-01

    Full Text Available Spin waves (SWs have the potential to reduce the electric energy loss in signal processing networks. The SWs called magnetostatic forward volume waves (MSFVWs are advantageous for networking due to their isotropic dispersion in the plane of a device. To control the MSFVW flow in a processing network based on yttrium iron garnet, we developed a SW absorber using artificial structures. The mechanical surface polishing method presented in this work can well control extrinsic damping without changing the SW dispersion of the host material. Furthermore, enhancement of the ferromagnetic resonance linewidth over 3 Oe was demonstrated.

  10. Highly spin-polarized materials and devices for spintronics∗.

    Science.gov (United States)

    Inomata, Koichiro; Ikeda, Naomichi; Tezuka, Nobuki; Goto, Ryogo; Sugimoto, Satoshi; Wojcik, Marek; Jedryka, Eva

    2008-01-01

    The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD) using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co 2 Cr 1 - x Fe x Al (CCFA( x )) and Co 2 FeSi 1 - x Al x (CFSA( x )) and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co 2 FeSi 0.5 Al 0.5 (CFSA(0.5)) Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5) at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001) substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5) electrodes depends on the structure, and is significantly higher for L2 1 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe 2 film deposited on a MgO (001) single crystal substrate, wherein the spinel

  11. Topological Magnonics: A Paradigm for Spin-Wave Manipulation and Device Design

    Science.gov (United States)

    Wang, X. S.; Zhang, H. W.; Wang, X. R.

    2018-02-01

    Conventional magnonic devices use magnetostatic waves whose properties are sensitive to device geometry and the details of magnetization structure, so the design and the scalability of the device or circuitry are difficult. We propose topological magnonics, in which topological exchange spin waves are used as information carriers, that do not suffer from conventional problems of magnonic devices with additional nice features of nanoscale wavelength and high frequency. We show that a perpendicularly magnetized ferromagnet on a honeycomb lattice is generically a topological magnetic material in the sense that topologically protected chiral edge spin waves exist in the band gap as long as a spin-orbit-induced nearest-neighbor pseudodipolar interaction (and/or a next-nearest-neighbor Dzyaloshinskii-Moriya interaction) is present. The edge spin waves propagate unidirectionally along sample edges and domain walls regardless of the system geometry and defects. As a proof of concept, spin-wave diodes, spin-wave beam splitters, and spin-wave interferometers are designed by using sample edges and domain walls to manipulate the propagation of topologically protected chiral spin waves. Since magnetic domain walls can be controlled by magnetic fields or electric current or fields, one can essentially draw, erase, and redraw different spin-wave devices and circuitry on the same magnetic plate so that the proposed devices are reconfigurable and tunable. The topological magnonics opens up an alternative direction towards a robust, reconfigurable and scalable spin-wave circuitry.

  12. High-performance spinning device for DVD-based micromechanical signal transduction

    DEFF Research Database (Denmark)

    Hwu, En-Te; Chen, Ching-Hsiu; Bosco, Filippo

    2013-01-01

    Here we report a high-throughput spinning device for nanometric scale measurements of microstructures with instrumentation details and experimental results. The readout technology implemented in the designed disc-like device is based on a DVD data storage optical pick-up unit (OPU). With a spinning...

  13. Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

    Science.gov (United States)

    Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

    2018-03-01

    We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

  14. Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

    Science.gov (United States)

    Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

    2017-07-01

    Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

  15. Melanin: spin behaviour and implications for bioelectronic devices (Presentation Recording)

    Science.gov (United States)

    Meredith, Paul; Sheliakina, Margarita; Mostert, Bernard

    2015-10-01

    The melanins are a broad class of pigmentary macromolecules found through nature that perform a wide range of functions including photo-protection [1]. The most common melanin - the brown, black pigment eumelanin, has been much studied because of its role in melanoma and also for its functional material properties [2]. Synthetic eumelanin has been shown to be photoconductive in the solid state and also possess a water content dependent dark conductivity [3]. It is now well established that these electrical properties arise from hybrid ionic-electronic behaviour, leading to the proposition that melanins could be model biocompatible systems for ion-to-electron transduction in bioelectronics. In my talk, I will discuss the basic science behind these bioelectronics properties - electrical and optical. In this context I will also describe recent electron paramagnetic spin studies which isolate the role of the various chemical moieties responsible for the hybrid ionic-electronic behaviour. I will also highlight preliminary results on prototype melanin-based bioelectronics devices and discuss possible architectures to realise elements such as solid-state switches and transducers. [1] "The physical and chemical properties of eumelanin", P. Meredith and T. Sarna, Pigment Cell Research, 19(6), pp572-594 (2006). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013). [3] "Is melanin a semiconductor: humidity induced self doping and the electrical conductivity of a biopolymer", A.B. Mostert, B.J. Powell, F.L. Pratt, G.R. Hanson, T. Sarna, I.R. Gentle and P. Meredith, Proceedings of the National Academy of Sciences of the USA, 109(23), 8943-8947 (2012).

  16. Spin-wave logic devices based on isotropic forward volume magnetostatic waves

    International Nuclear Information System (INIS)

    Klingler, S.; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

    2015-01-01

    We propose the utilization of isotropic forward volume magnetostatic spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical simulations that the proposed out-of-plane magnetized majority gate overcomes the limitations of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission through the gate, which enables a reduced energy consumption of these devices. Moreover, the functionality of the out-of-plane majority gate is increased due to the lack of parasitic generation of short-wavelength exchange spin waves

  17. Spin-wave logic devices based on isotropic forward volume magnetostatic waves

    Energy Technology Data Exchange (ETDEWEB)

    Klingler, S., E-mail: stefan.klingler@wmi.badw-muenchen.de; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

    2015-05-25

    We propose the utilization of isotropic forward volume magnetostatic spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical simulations that the proposed out-of-plane magnetized majority gate overcomes the limitations of anisotropic in-plane magnetized majority gates due to the high spin-wave transmission through the gate, which enables a reduced energy consumption of these devices. Moreover, the functionality of the out-of-plane majority gate is increased due to the lack of parasitic generation of short-wavelength exchange spin waves.

  18. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  19. Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

    Science.gov (United States)

    Song, Yipu; Schmitt, Andrew L; Jin, Song

    2008-08-01

    Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

  20. Spin Hall conductance in a Y-shaped junction device in presence of tunable spin-orbit coupling

    Science.gov (United States)

    Ganguly, Sudin; Basu, Saurabh

    2017-06-01

    We study spin Hall effect in a three terminal Y-shaped device in presence of tunable spin-orbit (SO) interactions via Landauer-Büttiker formalism. We have evolved a fabrication technique for creating different angular separation between the two arms of the Y-shaped device so as to investigate the effect of angular width on the spin Hall conductance (SHC). A smaller angular separation yields a larger conductance. Also arbitrary orientation of the spin quantization axes yields interesting three dimensional contour maps for the SHC corresponding to different angular separation of the Y-shaped device. In addition to the GSH demonstrating bounded behaviour for different angular separations, there are distinct symmetry axes about which SHC demonstrates reflection symmetry. The results explicitly show breaking of the spin rotational symmetry. Further a systematic study is carried out to compare and contrast between the different SO terms, such as Rashba and Dresselhaus SO interactions and the interplay of the angular separation therein.

  1. Spin-dependent transport and functional design in organic ferromagnetic devices

    Directory of Open Access Journals (Sweden)

    Guichao Hu

    2017-09-01

    Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

  2. The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

    International Nuclear Information System (INIS)

    Pugh, D.I.

    2001-01-01

    The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

  3. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  4. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Science.gov (United States)

    Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

    2018-04-01

    Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

  5. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  6. EXPERIENCES IN THE AIR SPINNING TO MANUFACTURE MEDICAL DEVICES

    Directory of Open Access Journals (Sweden)

    MARSAL Feliu

    2015-05-01

    Full Text Available The work aims to determine, with scientific rigor, differences in key parameters of the yarns produced by conventional ring spinning systems, open-end and air spinning and its interrelation with the main parameters of those products that are intended for medical-sanitary sector. The experiences have been made in a Spanish company from short fibers sector that has three spinning systems, with tradition and prestige in world market, validating the results in Innotex Center laboratories of the Polytechnic University of Catalonia. Considering the results, it shows that the technology of manufacture of yarns by air is suitable for yarn, woven fabrics and knitting, structures to textile medical-sanitary application, by specific properties as well as enhanced competitiveness, due to the high production rate and shortened spinning process. The viscose yarns manufactured by air mass are more mass regular. The new DR parameter clearly indicates a better look of the finished fabric when we work with yarns produced by air technology.The significant reduction of the hairiness means less formation of loose fibres by friction, very important in the application of these yarns in the manufacture of textile structures for medical-sanitary use. Also no-table increase of about 15% in the absorption capacity of the fluids, especially water, from the yarns made by air. In the functionalization of fabrics obtained from spun yarn by air will need to apply a permanent smoothing.

  7. A device for pre-separating water-drops in a two-phase flow

    International Nuclear Information System (INIS)

    Andro, Jean; Peyrelongue, J.-P.

    1974-01-01

    The invention relates to the mechanical pre-separation of water-drops in suspension in a flow of saturated steam. To this end, the method comprises the steps of carrying out rough separations by directing the flow towards curved surfaces adapted to deflect that flow and to project the drops onto said surfaces, sucking the film formed by the water-drops displaced by centrifugal force on the outer periphery of said surfaces, directing the steam separated from the water-drops onto five separators so as to extract dry steam and discharging the water provided by the sucking of said surfaces and the five separators. The invention applies to the drying of steam issuing from the high-pressure bodies of nuclear steam-turbines [fr

  8. Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Jovanovic, N.; Vandersypen, L. M. K. [QuTech and Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-07-25

    The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quantum computer. Previous shuttles using electrostatic gating were too slow to move an electron within the spin dephasing time across an array. Here, we report a nanosecond-timescale spin transfer of individual electrons across a quadruple-quantum-dot device. Utilizing enhanced relaxation rates at a so-called hot spot, we can upper bound the shuttle time to at most 150 ns. While actual shuttle times are likely shorter, 150 ns is already fast enough to preserve spin coherence in, e.g., silicon based quantum dots. This work therefore realizes an important prerequisite for coherent spin transfer in quantum dot arrays.

  9. Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

    Science.gov (United States)

    Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

    2016-10-01

    A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

  10. Spin dependent disorder in a junction device with spin orbit couplings

    International Nuclear Information System (INIS)

    Ganguly, Sudin; Basu, Saurabh

    2016-01-01

    Using the multi-probe Landauer-BUttiker formula and Green's function approach, we calculate the longitudinal conductance (LC) and spin Hall conductance (SHC) numerically in a two-dimensional junction system with the Rashba and Dresselhaus spin orbit coupling (SOC) and spin dependent disorder (SDD) in presence of both random onsite and hopping disorder strengths. It has been found that when the strengths of the RSOC and DSOC are same, the SHC vanishes. Further in presence of random onsite or hopping disorder, the SHC is still zero when the strengths of the two types of SOC, that is Rashba and Dressselhaus are the same. This indicates that the cancellation of SHC is robust even in the presence of random disorder. Only with the inclusion of SDD (onsite or hopping), a non-zero SHC is found and it increases as the strength of SDD increases. The physical implication of the existence of a non-zero SHC has been explored in this work. Finally, we have compared the effect of onsite SDD and hopping SDD on both longitudinal and spin Hall conductances. (paper)

  11. Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

    Science.gov (United States)

    Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

    2012-04-01

    In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

  12. Electrical detection of proton-spin motion in a polymer device at room temperature

    Science.gov (United States)

    Boehme, Christoph

    With the emergence of spintronics concepts based on organic semiconductors there has been renewed interest in the role of both, electron as well as nuclear spin states for the magneto-optoelectronic properties of these materials. In spite of decades of research on these molecular systems, there is still much need for an understanding of some of the fundamental properties of spin-controlled charge carrier transport and recombination processes. This presentation focuses on mechanisms that allow proton spin states to influence electronic transition rates in organic semiconductors. Remarkably, even at low-magnetic field conditions and room temperature, nuclear spin states with energy splittings orders of magnitude below thermal energies are able to influence observables like magnetoresistance and fluorescence. While proton spins couple to charge carrier spins via hyperfine interaction, there has been considerable debate about the nature of the electronic processes that are highly susceptible to these weak hyperfine fields. Here, experiments are presented which show how the magnetic resonant manipulation of electron and nuclear spin states in a π-conjugated polymer device causes changes of the device current. The experiments confirm the extraordinary sensitivity of electronic transitions to very weak magnetic field changes and underscore the potential significance of spin-selection rules for highly sensitive absolute magnetic fields sensor concepts. However, the relevance of these magnetic-field sensitive spin-dependent electron transitions is not just limited to semiconductor materials but also radical pair chemistry and even avian magnetoreceptors This work was supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award #DE-SC0000909. The Utah NSF - MRSEC program #DMR 1121252 is acknowledged for instrumentation support.

  13. Electron spin for classical information processing: a brief survey of spin-based logic devices, gates and circuits

    International Nuclear Information System (INIS)

    Bandyopadhyay, Supriyo; Cahay, Marc

    2009-01-01

    In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information processing device invariably causes current flow and an associated dissipation. Replacing 'charge' with the 'spin' of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient 'green electronics'. This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation. (topical review)

  14. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

    Science.gov (United States)

    Lou, Xiaohua

    2007-03-01

    A fully electrical scheme of spin injection, transport, and detection in a single ferromagnet-semiconductor structure has been a long-standing goal in the field of spintronics. In this talk, we report on an experimental demonstration of such a scheme. The devices are fabricated from epitaxial Fe/GaAs (100) heterostructures with highly doped GaAs as a Schottky tunnel barrier. A set of closely spaced Fe contacts on the top of an n-GaAs channel are used as spin injectors and detectors. Reference electrodes are placed at the far ends of the channel, allowing for non-local spin detection [1]. The electro-chemical potential of the detector is sensitive to the relative magnetizations of the injector and detector. In spin-valve measurements, a magnetic field is applied along the Fe easy axis to switch the relative magnetizations of injector and detector from parallel to antiparallel, resulting in a voltage jump that is proportional to the non-equilibrium spin polarization in the channel. A more rigorous test of electrical spin detection is the observation of the Hanle effect, in which an out-of-plane magnetic field is used to modulate and dephase the spin polarization in the channel. The magnitudes of the observed Hanle curves agree with the results of the spin-valve measurements. The dependence of the Hanle curves on temperature and contact separation is studied in detail and is consistent with a drift-diffusion model incorporating spin precession and relaxation. The spin polarization generated by spin injection (reverse bias at the injector) or spin accumulation (forward bias at the injector) is measured using the magneto-optical Kerr effect and is found to be in good agreement with the spin-dependent non-local voltage. Both the transport and optical measurements show a non-linear relationship between the bias voltage at the injector and the spin polarization in the channel. [1] M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).

  15. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    Science.gov (United States)

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-01

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  16. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  17. Effects of interface electric field on the magnetoresistance in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

    2014-04-28

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  18. Finite temperature simulation studies of spin-flop magnetic random access memory devices

    International Nuclear Information System (INIS)

    Chui, S.T.; Chang, C.-R.

    2006-01-01

    Spin-flop structures are currently being developed for magnetic random access memory devices. We report simulation studies of this system. We found the switching involves an intermediate edge-pinned domain state, similar to that observed in the single layer case. This switching scenario is quite different from that based on the coherent rotation picture. A significant temperature dependence of the switching field is observed. Our result suggests that the interplane coupling and thus the switching field has to be above a finite threshold for the spin-flop switching to be better than conventional switching methods

  19. Leading research report for fiscal 1999. Fundamental technology of spin electronic device; 1999 nendo spin toronikusu soshi kiban gijutsu kenkyu hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The project, with attention paid to both spin and charge of electrons, aims to draw the best of the said two attributes of electrons by use of the state of the art in manufacturing technology for the creation of novel electronic devices. The nonvolatile MRAM (magnetic random access memory), which is the nearest to commercialization, is a tunnel device consisting of two sheet-shape ferromagnetic metal electrodes and an insulator film sandwiched between the said two electrodes, with the lower electrode magnetized only in one direction. The tunnel resistance changes when the magnetization direction in the upper electrode changes left and right (1, 0) according to an external writing magnetic field, and this enables nondestructive readout. The upper electrode magnetization direction remains unchanged thanks to hysteresis when the external writing magnetic field is turned off, and this allows the device to serve as a nonvolatile memory device. The device has a potential for higher speeds and enhanced integration. Much is also expected from a spin conduction functional device utilizing spin-dependent electric conduction, spin optical function device, spin quantum calculation directly utilizing quantum state, magnetic field sensor, etc. Their importance is great economically and socially, and technologies relating to magnetism and semiconductor should be merged for their further development. (NEDO)

  20. Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

    Directory of Open Access Journals (Sweden)

    Leilei Xu

    2017-01-01

    Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

  1. Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices

    Science.gov (United States)

    Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.

    Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.

  2. Numerical simulation of a device with two spin crossover complexes: application for temperature and pressure sensors

    Science.gov (United States)

    Linares, Jorge; Eddine Allal, Salah; Dahoo, Pierre Richard; Garcia, Yann

    2017-12-01

    The spin-crossover (SCO) phenomenon is related to the ability of a transition metal to change its spin state vs. a given perturbation. For an iron(II) SCO complexes the reversible changes involve the diamagnetic low-spin (S = 0) and the paramagnetic high-spin (HS S = 2) states [1,2,3]. In this contribution we simulate the HS Fraction (nHS) for different set values of temperature and pressure for a device using two SCO complexes with weak elastic interactions. We improve the calculation given by Linares et al. [4], taking also into account different volume (VHS, VLS) changes of the SCO. We perform all the calculation in the frame work of an Ising-like model solved in the mean-field approximation. The two SCO show in the case of “weak elastic interactions”, gradual spin transitions such that both temperature and pressure values can be obtained from the optical observation in the light of calculations discussed in this article.

  3. Back-Hopping in Spin-Transfer-Torque Devices: Possible Origin and Countermeasures

    Science.gov (United States)

    Abert, Claas; Sepehri-Amin, Hossein; Bruckner, Florian; Vogler, Christoph; Hayashi, Masamitsu; Suess, Dieter

    2018-05-01

    The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back-hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the destabilization of the pinned layer, which leads to the perpetual switching of both layers. While the presented mechanism is not claimed to be the only possible reason for back-hopping, we show that it is a fundamental effect that will occur in any spin-transfer-torque device when exceeding a critical current. The influence of different material parameters on the critical switching currents for the free and pinned layer is obtained by micromagnetic simulations. The spin-diffusion model enables an accurate description of the torque on both layers, depending on various material parameters. It is found that the choice of a free-layer material with low polarization β and saturation magnetization Ms and a pinned-layer material with high β and Ms leads to a low free-layer critical current and a high pinned-layer critical current and hence reduces the likelihood of back-hopping. While back-hopping has been observed in various types of devices, there are only a few experiments that exhibit this effect in perpendicularly magnetized systems. However, our simulations suggest that the described effect will also gain importance in perpendicular systems due to the loss of pinned-layer anisotropy for decreasing device sizes.

  4. Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

    Science.gov (United States)

    Wang, Jian-Ping

    An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

  5. Over a century of neuron culture: from the hanging drop to microfluidic devices.

    Science.gov (United States)

    Millet, Larry J; Gillette, Martha U

    2012-12-01

    The brain is the most intricate, energetically active, and plastic organ in the body. These features extend to its cellular elements, the neurons and glia. Understanding neurons, or nerve cells, at the cellular and molecular levels is the cornerstone of modern neuroscience. The complexities of neuron structure and function require unusual methods of culture to determine how aberrations in or between cells give rise to brain dysfunction and disease. Here we review the methods that have emerged over the past century for culturing neurons in vitro, from the landmark finding by Harrison (1910) - that neurons can be cultured outside the body - to studies utilizing culture vessels, micro-islands, Campenot and brain slice chambers, and microfluidic technologies. We conclude with future prospects for neuronal culture and considerations for advancement. We anticipate that continued innovation in culture methods will enhance design capabilities for temporal control of media and reagents (chemotemporal control) within sub-cellular environments of three-dimensional fluidic spaces (microfluidic devices) and materials (e.g., hydrogels). They will enable new insights into the complexities of neuronal development and pathology.

  6. Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

    Directory of Open Access Journals (Sweden)

    Adrian Iovan

    2012-12-01

    Full Text Available Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.

  7. High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device

    International Nuclear Information System (INIS)

    Bala Kumar, S; Jalil, M B A; Tan, S G; Liang, G-C

    2009-01-01

    We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.

  8. Spin coated graphene films as the transparent electrode in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

    2011-01-01

    Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

  9. Voltage-Controlled Reconfigurable Spin-Wave Nanochannels and Logic Devices

    Science.gov (United States)

    Rana, Bivas; Otani, YoshiChika

    2018-01-01

    Propagating spin waves (SWs) promise to be a potential information carrier in future spintronics devices with lower power consumption. Here, we propose reconfigurable nanochannels (NCs) generated by voltage-controlled magnetic anisotropy (VCMA) in an ultrathin ferromagnetic waveguide for SW propagation. Numerical micromagnetic simulations are performed to demonstrate the confinement of magnetostatic forward volumelike spin waves in NCs by VCMA. We demonstrate that the NCs, with a width down to a few tens of a nanometer, can be configured either into a straight or curved structure on an extended SW waveguide. The key advantage is that either a single NC or any combination of a number of NCs can be easily configured by VCMA for simultaneous propagation of SWs either with the same or different wave vectors according to our needs. Furthermore, we demonstrate the logic operation of a voltage-controlled magnonic xnor and universal nand gate and propose a voltage-controlled reconfigurable SW switch for the development of a multiplexer and demultiplexer. We find that the NCs and logic devices can even be functioning in the absence of the external-bias magnetic field. These results are a step towards the development of all-voltage-controlled magnonic devices with an ultralow power consumption.

  10. Spin-polarized transport properties of a pyridinium-based molecular spintronics device

    Science.gov (United States)

    Zhang, J.; Xu, B.; Qin, Z.

    2018-05-01

    By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based "radical-π-radical" molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.

  11. Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

    Science.gov (United States)

    Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

    2018-04-24

    Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

  12. Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

    Science.gov (United States)

    Munira, Kamaram; Romero, Jonathon; Butler, William H.

    2014-05-01

    Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

  13. Ultrasonic Substrate Vibration-Assisted Drop Casting (SVADC) for the Fabrication of Photovoltaic Solar Cell Arrays and Thin-Film Devices.

    Science.gov (United States)

    Eslamian, Morteza; Zabihi, Fatemeh

    2015-12-01

    A simple, low-cost, versatile, and potentially scalable casting method is proposed for the fabrication of micro- and nano-thin films, herein termed as ultrasonic "substrate vibration-assisted drop casting" (SVADC). The impingement of a solution drop onto a substrate in a simple process called drop casting, usually results in spreading of the liquid solution and the formation of a non-uniform thin solid film after solvent evaporation. Our previous and current supporting results, as well as few similar reports by others, confirm that imposing ultrasonic vibration on the substrate can simply convert the uncontrollable drop casting method into a controllable coating technique. Therefore, the SVADC may be used to fabricate an array of emerging thin-film solar cells, such as polymer, perovskite, and quantum-dot solar cells, as well as other small thin-film devices, in a roll-to-roll and automated fabrication process. The preliminary results demonstrate a ten-fold increase in electrical conductivity of PSS made by SVADC compared with the film made by conventional drop casting. Also, simple planar perovskite solar cells made here using SVADC show promising performance with an efficiency of over 3 % for a simple structure without performing process optimization or using expensive materials and treatments.

  14. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

    Energy Technology Data Exchange (ETDEWEB)

    Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

    2012-01-01

    New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

  15. A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, Alexander; Medina, Ernesto [Centro de Fisica, Instituto Venezolano de Investigaciones CientIficas, Apartado 21874, Caracas 1020-A (Venezuela, Bolivarian Republic of); BolIvar, Nelson [Departamento de Fisica, Universidad Central de Venezuela, Caracas (Venezuela, Bolivarian Republic of); Berche, Bertrand [Statistical Physics Group, P2M, Institut Jean Lamour, Nancy Universite, BP70239, F-54506 Vandoeuvre les Nancy (France)

    2010-03-24

    A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

  16. A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

    International Nuclear Information System (INIS)

    Lopez, Alexander; Medina, Ernesto; BolIvar, Nelson; Berche, Bertrand

    2010-01-01

    A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

  17. A perfect spin filtering device through Mach-Zehnder interferometry in a GaAs/AlGaAs electron gas

    Science.gov (United States)

    López, Alexander; Medina, Ernesto; Bolívar, Nelson; Berche, Bertrand

    2010-03-01

    A spin filtering device based on quantum spin interference is addressed, for use with a two-dimensional GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit (SO) couplings and an applied external magnetic field. We propose an experimentally feasible electronic Mach-Zehnder interferometer and derive a map, in parameter space, that determines perfect spin filtering conditions. We find two broad spin filtering regimes: one where filtering is achieved in the original incoming quantization basis, that takes advantage of the purely non-Abelian nature of the spin rotations; and another where one needs a tilted preferential axis in order to observe the polarized output spinor. Both solutions apply for arbitrary incoming electron polarization and energy, and are only limited in output amplitude by the randomness of the incoming spinor state. Including a full account of the beam splitter and mirror effects on spin yields solutions only for the tilted basis, but encompasses a broad range of filtering conditions.

  18. Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

    Science.gov (United States)

    Graziosi, Patrizio; Neophytou, Neophytos

    2018-02-01

    Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

  19. Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

    Science.gov (United States)

    Katti, R. R.; Zou, D.; Reed, D.; Schipper, D.; Hynes, O.; Shaw, G.; Kaakani, H.

    2003-05-01

    Prior work has shown that current-in-plane (CIP) giant magnetoresistive (GMR) pseudo-spin-valve (PSV) devices grown on bulk Si wafers and bulk complementary metal-oxide semiconductor (CMOS) underlayers exhibit write and read characteristics that are suitable for application as nonvolatile memory devices. In this work, CIP GMR PSV devices fabricated on silicon-on-insulator CMOS underlayers are shown to support write and read performance. Reading and writing fields for selected devices are shown to be approximately 25%-50% that of unselected devices, which provides a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits. The switching characteristics of experimental devices were compared to and found to be similar with Landau-Lifschitz-Gilbert micromagnetic modeling results, which allowed inferring regions of reversible and irreversible rotations in magnetic reversal processes.

  20. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  1. Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

    International Nuclear Information System (INIS)

    Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Tanamoto, T.; Saito, Y.; Hamaya, K.; Tezuka, N.

    2013-01-01

    We study in detail how the bias voltage (V bias ) and interface resistance (RA) depend on the magnitude of spin accumulation signals (|ΔV| or |ΔV|/I, where I is current) as detected by three-terminal Hanle measurements in CoFe/MgO/Si on insulator (SOI) devices with various MgO layer thicknesses and SOI carrier densities. We find the apparent maximum magnitude of spin polarization as a function of V bias and the correlation between the magnitude of spin accumulation signals and the shape of differential conductance (dI/dV) curves within the framework of the standard spin diffusion model. All of the experimental results can be explained by taking into account the density of states (DOS) in CoFe under the influence of the applied V bias and the quality of MgO tunnel barrier. These results indicate that it is important to consider the DOS of the ferromagnetic materials under the influence of an applied V bias and the quality of tunnel barrier when observing large spin accumulation signals in Si

  2. Zero-field precession and hysteretic threshold currents in a spin torque nano device with tilted polarizer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Yan; Bonetti, S; Zha, C L; Akerman, Johan [Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)], E-mail: zhouyan@kth.se

    2009-10-15

    Using nonlinear system theory and numerical simulations, we map out the static and dynamic phase diagrams in the zero applied field of a spin torque nano device with a tilted polarizer (TP). We find that for sufficiently large currents, even very small tilt angles ({beta}>1 deg.) will lead to steady free layer precession in zero field. Within a rather large range of tilt angles, 1 deg. <{beta}<19 deg., we find coexisting static states and hysteretic switching between these using only current. In a more narrow window (1 deg. <{beta}<5 deg.) one of the static states turns into a limit cycle (precession). The coexistence of current-driven static and dynamic states in the zero magnetic field is unique to the TP device and leads to large hysteresis in the upper and lower threshold currents for its operation. The nano device with TP can facilitate the generation of large amplitude mode of spin torque signals without the need for cumbersome magnetic field sources and thus should be very important for future telecommunication applications based on spin transfer torque effects.

  3. Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

    International Nuclear Information System (INIS)

    Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

    2010-01-01

    A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

  4. Comparação entre o método da gota pendente e o método da gota girante para medida da tensão interfacial entre polímeros Comparison between the pendant drop and spinning drop method to measure interfacial tension between polymers

    Directory of Open Access Journals (Sweden)

    Nicole R. Demarquette

    1997-09-01

    Full Text Available Dois instrumentos, um deles baseado no princípio da gota pendente e o outro baseado no método da gota girante, para medir a tensão interfacial entre polímeros, são apresentados e comparados aqui. Com ambos instrumentos foi possível visualizar a gota de polímero "on line". Os instrumentos mostraram-se complementares quanto às suas áreas de aplicação. O método da gota pendente deve ser usado quando as quantidades de polímero são limitadas ou quando o polímero mais denso é opaco. O método da gota girante deve ser usado quando a degradação térmica pode ser um problema ou quando o polímero menos denso é opaco.In this paper two apparatuses, one based on the principle of the pendant drop method and one based on the principle of the spinning drop are presented and compared. With both apparatuses it was possible to view the drop in real time and calculate the interfacial tension on-line. The two equipments were shown to be complementary in their use. The pendant drop method should be used when there are limited quantities of polymer and/or the denser polymer is opaque. The spinning drop method should be used when thermal degradation could be a problem and/or when the lighter polymer is opaque.

  5. Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

    DEFF Research Database (Denmark)

    Piraux, L.; Renard, K.; Guillemet, R.

    2007-01-01

    We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena....... The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin...

  6. The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices

    International Nuclear Information System (INIS)

    Hu, Jiaxi; Haratipour, Nazila; Koester, Steven J.

    2015-01-01

    All-spin logic (ASL) is a novel approach for digital logic applications wherein spin is used as the state variable instead of charge. One of the challenges in realizing a practical ASL system is the need to ensure non-reciprocity, meaning the information flows from input to output, not vice versa. One approach described previously, is to introduce an asymmetric ground contact, and while this approach was shown to be effective, it remains unclear as to the optimal approach for achieving non-reciprocity in ASL. In this study, we quantitatively analyze techniques to achieve non-reciprocity in ASL devices, and we specifically compare the effect of using asymmetric ground position and dipole-coupled output/input isolation. For this analysis, we simulate the switching dynamics of multiple-stage logic devices with FePt and FePd perpendicular magnetic anisotropy materials using a combination of a matrix-based spin circuit model coupled to the Landau–Lifshitz–Gilbert equation. The dipole field is included in this model and can act as both a desirable means of coupling magnets and a source of noise. The dynamic energy consumption has been calculated for these schemes, as a function of input/output magnet separation, and the results show that using a scheme that electrically isolates logic stages produces superior non-reciprocity, thus allowing both improved scaling and reduced energy consumption

  7. The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Jiaxi; Haratipour, Nazila; Koester, Steven J., E-mail: skoester@umn.edu [Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, 200 Union St. SE, Minneapolis, Minnesota 55455 (United States)

    2015-05-07

    All-spin logic (ASL) is a novel approach for digital logic applications wherein spin is used as the state variable instead of charge. One of the challenges in realizing a practical ASL system is the need to ensure non-reciprocity, meaning the information flows from input to output, not vice versa. One approach described previously, is to introduce an asymmetric ground contact, and while this approach was shown to be effective, it remains unclear as to the optimal approach for achieving non-reciprocity in ASL. In this study, we quantitatively analyze techniques to achieve non-reciprocity in ASL devices, and we specifically compare the effect of using asymmetric ground position and dipole-coupled output/input isolation. For this analysis, we simulate the switching dynamics of multiple-stage logic devices with FePt and FePd perpendicular magnetic anisotropy materials using a combination of a matrix-based spin circuit model coupled to the Landau–Lifshitz–Gilbert equation. The dipole field is included in this model and can act as both a desirable means of coupling magnets and a source of noise. The dynamic energy consumption has been calculated for these schemes, as a function of input/output magnet separation, and the results show that using a scheme that electrically isolates logic stages produces superior non-reciprocity, thus allowing both improved scaling and reduced energy consumption.

  8. Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

    International Nuclear Information System (INIS)

    Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

    2014-01-01

    Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

  9. Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

    2014-01-05

    Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

  10. Ultra-Compact 100 × 100 μm2 Footprint Hybrid Device with Spin-Valve Nanosensors

    Directory of Open Access Journals (Sweden)

    Diana C. Leitao

    2015-12-01

    Full Text Available Magnetic field mapping with micrometric spatial resolution and high sensitivity is a challenging application, and the technological solutions are usually based on large area devices integrating discrete magnetic flux guide elements. In this work we demonstrate a high performance hybrid device with improved field sensitivity levels and small footprint, consisting of a ultra-compact 2D design where nanometric spin valve sensors are inserted within the gap of thin-film magnetic flux concentrators. Pole-sensor distances down to 400 nm are demonstrated using nanofabrication techniques combined with an optimized liftoff process. These 100 × 100 μm 2 pixel sensors can be integrated in modular devices for surface mapping without moving parts.

  11. Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

    Science.gov (United States)

    Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

    2018-04-01

    Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

  12. The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

    Science.gov (United States)

    Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

    2018-05-01

    The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

  13. Influence of spin methods on the performance of polymer light-emitting devices

    International Nuclear Information System (INIS)

    Liu Chen; Zou Xuecheng; Yin Sheng; Zhang Wuxing

    2004-01-01

    Using the doped polymeric system composed of host poly(N-vinylcarbazole) and dopant coumarin 6, the morphology, phase distribution, and polymer molecular conformation of polymer films were investigated with optical and atomic force microscopy, UV-visible absorption spectra, and Fourier transform infrared reflectance spectroscopy. Results show that the film morphology and dopant distribution in the polymer films cast with the conventional method are dependent on the positions of polymer films. To avoid this negative effect, a new spin method was put forward by locating the specimen at an appropriate distance from the center of the spin plate during spin casting. It is found that polymer films prepared with the new method are more uniform and their electroluminescence performances are independent of the positions

  14. Half metallic ferromagnet Pr_0_._9_5Mn_0_._9_3_9O_3 for spin based devices

    International Nuclear Information System (INIS)

    Santhosh Kumar, B.; Praveen Shankar, N.; Venkateswaran, C.; Manimuthu, P.

    2016-01-01

    Half Metallic Ferromagnets (HMF) are excellent candidates for spintronics devices due to their unusual 3d and 4s bands. Band theory and first principles calculations strongly predict that Pr based compounds are promising HMF candidates due to their spin hybridisation. Among all Pr based HMF, Pr_0_._9_5Mn_0_._9_3_9O_3 is special because of its pervoskite structure. The different oxidation states of Mn and Pr will enhance the hybridisation of 3d and 4f bands. The present study is experimental effort on the preparation of Pr based compounds

  15. The phase accumulation and antenna near field of microscopic propagating spin wave devices

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Crosby S.; Kostylev, Mikhail, E-mail: mikhail.kostylev@uwa.edu.au; Ivanov, Eugene [School of Physics M013, The University of Western Australia, Crawley, WA 6009 (Australia); Ding, Junjia; Adeyeye, Adekunle O. [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

    2014-01-20

    We studied phase accumulation by the highly non-reciprocal magnetostatic surface spin waves in thin Permalloy microstripes excited and received by microscopic coplanar antennae. We find that the experimentally measured characteristic length of the near field of the antenna is smaller than the total width of the coplanar. This is confirmed by our numerical simulations. Consequently, the distance over which the spin wave accumulates its phase while travelling between the input and output antennae coincides with the distance between the antennae symmetry axes with good accuracy.

  16. The phase accumulation and antenna near field of microscopic propagating spin wave devices

    International Nuclear Information System (INIS)

    Chang, Crosby S.; Kostylev, Mikhail; Ivanov, Eugene; Ding, Junjia; Adeyeye, Adekunle O.

    2014-01-01

    We studied phase accumulation by the highly non-reciprocal magnetostatic surface spin waves in thin Permalloy microstripes excited and received by microscopic coplanar antennae. We find that the experimentally measured characteristic length of the near field of the antenna is smaller than the total width of the coplanar. This is confirmed by our numerical simulations. Consequently, the distance over which the spin wave accumulates its phase while travelling between the input and output antennae coincides with the distance between the antennae symmetry axes with good accuracy

  17. Devices and process for high-pressure magic angle spinning nuclear magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Hoyt, David W.; Sears, Jesse A.; Turcu, Romulus V. F.; Rosso, Kevin M.; Hu, Jian Zhi

    2017-12-05

    A high-pressure magic angle spinning (MAS) rotor is detailed that includes a high-pressure sample cell that maintains high pressures exceeding 150 bar. The sample cell design minimizes pressure losses due to penetration over an extended period of time.

  18. Absence of hyperfine effects in 13C-graphene spin-valve devices

    NARCIS (Netherlands)

    Wojtaszek, M.; Vera-Marun, I.J.; Whiteway, E.; Hilke, M.; Wees, B.J. van

    2014-01-01

    The carbon isotope 13C, in contrast to 12C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of 13C in natural carbon allotropes (~1%). Chemical vapor deposition (CVD) allows for artificial synthesis of

  19. Spin and charge transport in graphene devices in the classical and quantum regimes

    NARCIS (Netherlands)

    Diniz Guimaraes, Marcos Henrique

    2015-01-01

    Grafeen, één atoom dik koolstofmateriaal, werd in het afgelopen decennium één van de meest veelbelovende materialen voor toekomstige elektronische apparaten. Grafeen heeft ook groot potentieel getoond voor spintronische toepassingen, waarbij het intrinsieke hoekmoment van het elektron (spin) wordt

  20. Another spin in the wall : domain wall dynamics in perpendicularly magnetized devices

    NARCIS (Netherlands)

    Lavrijsen, R.

    2011-01-01

    The world as we know it today would be completely different without spintronics. It has revolutionized the way we carry, store and exchange information in our daily lives. What is it? It is a research realm that combines the fundamental property of the electron, spin, and the charge property driving

  1. In search of a quasi-zero dimensional quantum spin-switching device

    International Nuclear Information System (INIS)

    Hancock, Y.

    2002-01-01

    Full text: In this paper, we propose a theoretical mechanism and potential application for quantum spin switching systems of the generic NMMMMMN type. In this case, N and M respectively refer to non-magnetic and magnetic atoms, of a 7-site finite, inhomogeneous system. We base our understanding on recent investigations into the magnetic induction mechanism on the N-type sites. Such investigations were performed within the context of the Hubbard Model, using both Hartree-Fock and Exact Diagonalization studies. In this work, we have used exact diagonalization studies to probe the spin-spin (2-site) correlation results of these systems, as a function of the model parameters and electron filling. Such calculations were performed within the context of the Hubbard and the Extended Hubbard Models. We have used our results as a means of investigating the proposed quantum spin-switching mechanism within the context of the full many-body problem. In addition to investigating this mechanism, we aim to propose a more realistic theoretical context in which the potential of these systems can be further explored

  2. Devices and process for high-pressure magic angle spinning nuclear magnetic resonance

    Science.gov (United States)

    Hoyt, David W; Sears, Jr., Jesse A; Turcu, Romulus V.F.; Rosso, Kevin M; Hu, Jian Zhi

    2014-04-08

    A high-pressure magic angle spinning (MAS) rotor is detailed that includes a high-pressure sample cell that maintains high pressures exceeding 150 bar. The sample cell design minimizes pressure losses due to penetration over an extended period of time.

  3. Spin-Valve Effect in a Ni-C60-Ni Device

    National Research Council Canada - National Science Library

    He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2006-01-01

    .... The magnitude of the junction magnetoresistance (JMR) is found to be significantly large for the device, which makes it a promising candidate for realistic applications in molecular spintronics...

  4. The anchoring effect on the spin transport properties and I-V characteristics of pentacene molecular devices suspended between nickel electrodes.

    Science.gov (United States)

    Caliskan, S; Laref, A

    2014-07-14

    Spin-polarized transport properties are determined for pentacene sandwiched between Ni surface electrodes with various anchoring ligands. These calculations are carried out using spin density functional theory in tandem with a non-equilibrium Green's function technique. The presence of a Se atom at the edge of the pentacene molecule significantly modifies the transport properties of the device because Se has a different electronegativity than S. Our theoretical results clearly show a larger current for spin-up electrons than for spin-down electrons in the molecular junction that is attached asymmetrically across the Se linker at one side of the Ni electrodes (in an APL magnetic orientation). Moreover, this molecular junction exhibits pronounced NDR as the bias voltage is increased from 0.8 to 1.0 V. However, this novel NDR behavior is only detected in this promising pentacene molecular device. The NDR in the current-voltage (I-V) curve results from the narrowness of the density of states for the molecular states. The feasibility of controlling the TMR is also predicted in these molecular device nanostructures. Spin-dependent transmission calculations show that the sign and strength of the current-bias voltage characteristics and the TMR could be tailored for the organic molecule devices. These molecular junctions are joined symmetrically and asymmetrically between Ni metallic probes across the S and Se atoms (at the ends of the edges of the pentacene molecule). Our theoretical findings show that spin-valve phenomena can occur in these prototypical molecular junctions. The TMR and NDR results show that nanoscale junctions with spin valves could play a vital role in the production of novel functional molecular devices.

  5. Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

    Science.gov (United States)

    Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

    2014-05-01

    Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

  6. Spin electronics

    CERN Document Server

    Buhrman, Robert; Daughton, James; Molnár, Stephan; Roukes, Michael

    2004-01-01

    This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterost...

  7. On the use of ultracentrifugal devices for routine sample preparation in biomolecular magic-angle-spinning NMR.

    Science.gov (United States)

    Mandal, Abhishek; Boatz, Jennifer C; Wheeler, Travis B; van der Wel, Patrick C A

    2017-03-01

    A number of recent advances in the field of magic-angle-spinning (MAS) solid-state NMR have enabled its application to a range of biological systems of ever increasing complexity. To retain biological relevance, these samples are increasingly studied in a hydrated state. At the same time, experimental feasibility requires the sample preparation process to attain a high sample concentration within the final MAS rotor. We discuss these considerations, and how they have led to a number of different approaches to MAS NMR sample preparation. We describe our experience of how custom-made (or commercially available) ultracentrifugal devices can facilitate a simple, fast and reliable sample preparation process. A number of groups have since adopted such tools, in some cases to prepare samples for sedimentation-style MAS NMR experiments. Here we argue for a more widespread adoption of their use for routine MAS NMR sample preparation.

  8. On the use of ultracentrifugal devices for routine sample preparation in biomolecular magic-angle-spinning NMR

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Abhishek; Boatz, Jennifer C. [University of Pittsburgh School of Medicine, Department of Structural Biology (United States); Wheeler, Travis B. [University of Pittsburgh School of Medicine, Department of Cell Biology (United States); Wel, Patrick C. A. van der, E-mail: vanderwel@pitt.edu [University of Pittsburgh School of Medicine, Department of Structural Biology (United States)

    2017-03-15

    A number of recent advances in the field of magic-angle-spinning (MAS) solid-state NMR have enabled its application to a range of biological systems of ever increasing complexity. To retain biological relevance, these samples are increasingly studied in a hydrated state. At the same time, experimental feasibility requires the sample preparation process to attain a high sample concentration within the final MAS rotor. We discuss these considerations, and how they have led to a number of different approaches to MAS NMR sample preparation. We describe our experience of how custom-made (or commercially available) ultracentrifugal devices can facilitate a simple, fast and reliable sample preparation process. A number of groups have since adopted such tools, in some cases to prepare samples for sedimentation-style MAS NMR experiments. Here we argue for a more widespread adoption of their use for routine MAS NMR sample preparation.

  9. Drop trampoline

    Science.gov (United States)

    Chantelot, Pierre; Coux, Martin; Clanet, Christophe; Quere, David

    2017-11-01

    Superhydrophobic substrates inspired from the lotus leaf have the ability to reflect impacting water drops. They do so very efficiently and contact lasts typically 10 ms for millimetric droplets. Yet unlike a lotus leaf most synthetic substrates are rigid. Focusing on the interplay between substrate flexibility and liquid repellency might allow us to understand the dynamic properties of natural surfaces. We perform liquid marbles impacts at velocity V onto thin ( 0.01 mm) stretched circular PDMS membranes. We obtain contact time reductions of up to 70%. The bouncing mechanism is drastically modified compared to that on a rigid substrate: the marble leaves the substrate while it is still spread in a disk shape as it is kicked upwards by the membrane. We show that the bouncing is controlled by an interplay between the dynamics of the drop and the membrane.

  10. Fabrication of three-dimensional micro-nanofiber structures by a novel solution blow spinning device

    Directory of Open Access Journals (Sweden)

    Feng Liang

    2017-02-01

    Full Text Available The fabrication of three-dimensional scaffolds has attracted more attention in tissue engineering. The purpose of this study is to explore a new method for the fabrication of three-dimensional micro-nanofiber structures by combining solution blow spinning and rotating collector. In this study, we successfully fabricated fibers with a minimum diameter of 200 nm and a three-dimensional structure with a maximum porosity of 89.9%. At the same time, the influence of various parameters such as the solvent volatility, the shape of the collector, the feed rate of the solution and the applied gas pressure were studied. It is found that solvent volatility has large effect on the formation of the three-dimensional shape of the structure. The shape of the collector affects the porosity and fiber distribution of the three-dimensional structure. The fiber diameter and fiber uniformity can be controlled by adjusting the solution feed rate and the applied gas pressure. It is feasible to fabricate high-quality three-dimensional micro-nanofiber structure by this new method, which has great potential in tissue engineering.

  11. Dropped Ceiling

    OpenAIRE

    Tabet, Rayyane

    2012-01-01

    On December 2nd 1950 the first drop of Saudi oil arrived to Lebanon via the newly constructed Trans-Arabian Pipeline, the world's longest pipeline and the largest American private investment in a foreign land. The 30inch wide structure which spanned 1213 kilometers passing through Saudi Arabia, Jordan, and Syria to end in Lebanon had required 3 years of planning and surveying, 2 years of installation, the fabrication of 256,000 tons of steel tubes, the employment of 30,000 workers, the ratifi...

  12. Quantum dot as spin current generator and energy harvester

    Science.gov (United States)

    Szukiewicz, Barbara; Wysokiński, Karol I.

    2015-05-01

    The thermoelectric transport in the device composed of a central nanoscopic system in contact with two electrodes and subject to the external magnetic field of Zeeman type has been studied. The device can support pure spin current in the electrodes and may serve as a source of the temperature induced spin currents with possible applications in spintronics. The system may also be used as an energy harvester. We calculate its thermodynamic efficiency η and the power output P. The maximal efficiency of the device reaches the Carnot value when the device works reversibly but with the vanishing power. The interactions between carriers diminish the maximal efficiency of the device, which under the constant load drops well below the Carnot limit but may exceed the Curzon-Ahlborn limit. While the effect of intradot Coulomb repulsion on η depends on the parameters, the interdot/interlevel interaction strongly diminishes the device efficiency.

  13. Drop Weight Device Fabrication and Tests for a Dynamic Material Property of Shock-Absorbing Material and Structure in Transportation Package

    International Nuclear Information System (INIS)

    Choi, Woo Seok; Jeon, Jea Eon; Han, Sang Hyeok; Lee, Sang Hoon; Seo, Ki Seok

    2009-01-01

    A radioactive material transportation package consists of canister and impact limiters. IAEA Safety Standard Series No. TS-R-1 recommends a drop test to evaluate the structural integrity of a transportation package under a hypothetical accident condition. The free drop test of a transportation package from 9 m height simulates one of accident conditions. The transportation package has a potential energy corresponding to 9 m drop height, and this energy changes to a kinetic energy when it impacts on the target. The energy is absorbed by a deformation of shock-absorbing material so that the minimum energy is transferred to canister. Accordingly, the shock-absorbing material is a very important part in transportation package design. Since the data for shock-absorbing material characteristics is acquired by a static test in general, it is quite different to that of dynamic characteristics. And the dynamic characteristics data is hardly found in literature. In this study, a drop weight facility was designed and fabricated which produces an impact speed like that of free drop of 9 m height. Several materials considered for an impact limiter and impact limiter structures were tested by a drop weight facility to acquire a dynamic material characteristics data

  14. Drop Weight Device Fabrication and Tests for a Dynamic Material Property of Shock-Absorbing Material and Structure in Transportation Package

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Woo Seok; Jeon, Jea Eon; Han, Sang Hyeok; Lee, Sang Hoon; Seo, Ki Seok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2009-05-15

    A radioactive material transportation package consists of canister and impact limiters. IAEA Safety Standard Series No. TS-R-1 recommends a drop test to evaluate the structural integrity of a transportation package under a hypothetical accident condition. The free drop test of a transportation package from 9 m height simulates one of accident conditions. The transportation package has a potential energy corresponding to 9 m drop height, and this energy changes to a kinetic energy when it impacts on the target. The energy is absorbed by a deformation of shock-absorbing material so that the minimum energy is transferred to canister. Accordingly, the shock-absorbing material is a very important part in transportation package design. Since the data for shock-absorbing material characteristics is acquired by a static test in general, it is quite different to that of dynamic characteristics. And the dynamic characteristics data is hardly found in literature. In this study, a drop weight facility was designed and fabricated which produces an impact speed like that of free drop of 9 m height. Several materials considered for an impact limiter and impact limiter structures were tested by a drop weight facility to acquire a dynamic material characteristics data.

  15. Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

    Science.gov (United States)

    Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

    2018-04-01

    We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

  16. Structural and magnetic properties of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point glasses and application in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Misawa, Takahiro; Mori, Sumito [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Komine, Takashi [Faculty of Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511 (Japan); Fujioka, Masaya; Nishii, Junji [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan); Kaiju, Hideo, E-mail: kaiju@es.hokudai.ac.jp [Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0020 (Japan)

    2016-12-30

    Graphical abstract: This paper presents the first demonstration of the formation of Ni{sub 78}Fe{sub 22} thin films sandwiched between low-softening-point (LSP) glasses used in spin quantum cross (SQC) devices and the theoretical prediction of spin filter effect in Ni{sub 78}Fe{sub 22}-based SQC devices. The fomation of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures was successfully demonstrated using a newly proposed thermal pressing technique. Interestingly, this technique gives rise to both a highly-oriented crystal growth in Ni{sub 78}Fe{sub 22} thin films and a 100-fold enhancement in coercivity, in contrast to those of as-deposited Ni{sub 78}Fe{sub 22} thin films. This remarkable increase in coercivity can be explained by the calculation based on two-dimensional random anisotropy model. These excellent features on structural and magnetic properties allowed us to achieve that the stray magnetic field was uniformly generated from the Ni{sub 78}Fe{sub 22} thin-film edge in the direction perpendicular to the cross section of the LSP-glass/Ni{sub 78}Fe{sub 22}/LSP-glass structures. As we calculated the stray magnetic field generated between the two edges of Ni{sub 78}Fe{sub 22} thin-film electrodes in SQC devices, a high stray field of approximately 5 kOe was generated when the gap distance between two edges of the Ni{sub 78}Fe{sub 22} thin-film electrodes was less than 5 nm and the thickness of Ni{sub 78}Fe{sub 22} was greater than 20 nm. These experimental and calculated results suggest that Ni{sub 78}Fe{sub 22} thin films sandwiched between LSP glasses can be used as electrodes in SQC devices, providing a spin-filter effect, and also our proposed techniques utilizing magnetic thin-film edges will open up new opportunities for the creation of high performance spin devices, such as large magnetoresistance devices and nanoscale spin injectors. Our paper is of strong interest to the broad audience of Applied Surface Science, as it demonstrates that the

  17. Capillary Thinning of Particle-laden Drops

    Science.gov (United States)

    Wagoner, Brayden; Thete, Sumeet; Jahns, Matt; Doshi, Pankaj; Basaran, Osman

    2015-11-01

    Drop formation is central in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, a thinning filament is created between the about-to-form drop and the fluid hanging from the nozzle. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids. The thinning dynamics is, however, altered completely when the fluid contains particles, the physics of which is not well understood. In this work, we explore the impact of solid particles on filament thinning and drop formation by using a combination of experiments and numerical simulations.

  18. Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

    International Nuclear Information System (INIS)

    Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

    1996-01-01

    Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)

  19. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  20. A controllable spin prism

    International Nuclear Information System (INIS)

    Hakioglu, T

    2009-01-01

    Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions are present and controlled by the plunger gate potential, the electric field and the barrier height. A totally destructive interference can be manipulated externally between the Rashba and Dresselhaus couplings. The spin-dependent transmission/reflection amplitudes are calculated as the control parameters are changed. The device operates as a spin prism/converter/filter in different regimes and may stimulate research in promising directions in spintronics in analogy with linear optics.

  1. Electron spin and nuclear spin manipulation in semiconductor nanosystems

    International Nuclear Information System (INIS)

    Hirayama, Yoshiro; Yusa, Go; Sasaki, Satoshi

    2006-01-01

    Manipulations of electron spin and nuclear spin have been studied in AlGaAs/GaAs semiconductor nanosystems. Non-local manipulation of electron spins has been realized by using the correlation effect between localized and mobile electron spins in a quantum dot- quantum wire coupled system. Interaction between electron and nuclear spins was exploited to achieve a coherent control of nuclear spins in a semiconductor point contact device. Using this device, we have demonstrated a fully coherent manipulation of any two states among the four spin levels of Ga and As nuclei. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  3. Anisotropic spin relaxation in graphene

    NARCIS (Netherlands)

    Tombros, N.; Tanabe, S.; Veligura, A.; Jozsa, C.; Popinciuc, M.; Jonkman, H. T.; van Wees, B. J.

    2008-01-01

    Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the nonlocal geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field B applied perpendicular

  4. Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

    Directory of Open Access Journals (Sweden)

    N. Liu

    2017-12-01

    Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

  5. Electron-Spin Filters Would Offer Spin Polarization Greater than 1

    Science.gov (United States)

    Ting, David Z.

    2009-01-01

    A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

  6. The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Ziętek, Sławomir, E-mail: zietek@agh.edu.pl; Skowroński, Witold; Wiśniowski, Piotr; Czapkiewicz, Maciej; Stobiecki, Tomasz [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Ogrodnik, Piotr [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa (Poland); Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)

    2015-09-21

    Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system.

  7. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

    2016-01-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

  8. Spin Orbit Torque in Ferromagnetic Semiconductors

    KAUST Repository

    Li, Hang

    2016-01-01

    Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can

  9. High-pressure, high-temperature magic angle spinning nuclear magnetic resonance devices and processes for making and using same

    Science.gov (United States)

    Hu, Jian Zhi; Hu, Mary Y.; Townsend, Mark R.; Lercher, Johannes A.; Peden, Charles H. F.

    2015-10-06

    Re-usable ceramic magic angle spinning (MAS) NMR rotors constructed of high-mechanic strength ceramics are detailed that include a sample compartment that maintains high pressures up to at least about 200 atmospheres (atm) and high temperatures up to about least about 300.degree. C. during operation. The rotor designs minimize pressure losses stemming from penetration over an extended period of time. The present invention makes possible a variety of in-situ high pressure, high temperature MAS NMR experiments not previously achieved in the prior art.

  10. Dynamics of deforming drops

    OpenAIRE

    Bouwhuis, W.

    2015-01-01

    Liquid drops play a dominant role in numerous industrial applications, such as spray coating, spray painting, inkjet printing, lithography processes, and spraying/sprinkling in agriculture or gardening. In all of these examples, the generation, flight, impact, and spreading of drops are separate stages of the corresponding industrial processes, which are all thoroughly studied for many years. This thesis focuses on drop dynamics, impact phenomena, Leidenfrost drops, and pouring flows. Based o...

  11. Blast Mitigation Sea Analysis - Evaluation of Lumbar Compression Data Trends in 5th Percentile Female Anthropomorphic Test Device Performance Compared to 50th Percentile Male Anthropomorphic Test Device in Drop Tower Testing

    Science.gov (United States)

    2016-08-21

    Kelly Bosch, PE Proceedings of the ASME 2016 International Design Engineering Technical Conferences & Computers and Information in Engineering...imparted on the occupant • Ideal EA device would reduce peak load and duration to reduce injury probability 5th Percentile Female – 200 g Pulse

  12. Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

    KAUST Repository

    Ortiz Pauyac, Christian

    2016-06-19

    In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

  13. Scanning drop sensor

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Jian; Xiang, Chengxiang; Gregoire, John

    2017-05-09

    Electrochemical experiments are performed on a collection of samples by suspending a drop of electrolyte solution between an electrochemical experiment probe and one of the samples that serves as a test sample. During the electrochemical experiment, the electrolyte solution is added to the drop and an output solution is removed from the drop. The probe and collection of samples can be moved relative to one another so the probe can be scanned across the samples.

  14. Scanning drop sensor

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Jian; Xiang, Chengxiang; Gregoire, John M.; Shinde, Aniketa A.; Guevarra, Dan W.; Jones, Ryan J.; Marcin, Martin R.; Mitrovic, Slobodan

    2017-05-09

    Electrochemical or electrochemical and photochemical experiments are performed on a collection of samples by suspending a drop of electrolyte solution between an electrochemical experiment probe and one of the samples that serves as a test sample. During the electrochemical experiment, the electrolyte solution is added to the drop and an output solution is removed from the drop. The probe and collection of samples can be moved relative to one another so the probe can be scanned across the samples.

  15. Spin injection and spin accumulation in all-metal mesoscopic spin valves

    NARCIS (Netherlands)

    Jedema, FJ; Nijboer, MS; Filip, AT; van Wees, BJ

    2003-01-01

    We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, Permalloy (Py), cobalt (Co), and nickel (Ni), are used as electrical spin

  16. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  17. Spin-current emission governed by nonlinear spin dynamics.

    Science.gov (United States)

    Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

    2015-10-16

    Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

  18. Axisymmetric Liquid Hanging Drops

    Science.gov (United States)

    Meister, Erich C.; Latychevskaia, Tatiana Yu

    2006-01-01

    The geometry of drops hanging on a circular capillary can be determined by numerically solving a dimensionless differential equation that is independent on any material properties, which enables one to follow the change of the height, surface area, and contact angle of drops hanging on a particular capillary. The results show that the application…

  19. Turbulence, bubbles and drops

    NARCIS (Netherlands)

    van der Veen, Roeland

    2016-01-01

    In this thesis, several questions related to drop impact and Taylor-Couette turbulence are answered. The deformation of a drop just before impact can cause a bubble to be entrapped. For many applications, such as inkjet printing, it is crucial to control the size of this entrapped bubble. To study

  20. Drop Tower Physics

    Science.gov (United States)

    Dittrich, William A.

    2014-01-01

    The drop towers of yesteryear were used to make lead shot for muskets, as described in "The Physics Teacher" in April 2012. However, modern drop towers are essentially elevators designed so that the cable can "break" on demand, creating an environment with microgravity for a short period of time, currently up to nine seconds at…

  1. Dynamics of deforming drops

    NARCIS (Netherlands)

    Bouwhuis, W.

    2015-01-01

    Liquid drops play a dominant role in numerous industrial applications, such as spray coating, spray painting, inkjet printing, lithography processes, and spraying/sprinkling in agriculture or gardening. In all of these examples, the generation, flight, impact, and spreading of drops are separate

  2. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  3. Spin tunneling and manipulation in nanostructures.

    Science.gov (United States)

    Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

    2012-09-01

    The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

  4. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  5. Long annealing effect on spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition

    Science.gov (United States)

    Ono, Tatsuyoshi; Hirata, Satoshi; Amemiya, Yoshiteru; Tabei, Tetsuo; Yokoyama, Shin

    2018-04-01

    The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0,1,2,3) for a fixed annealing condition of 3 h at 900 °C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 µV/50 °C was obtained for a sample annealed for 14 h at 800 °C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 °C.

  6. Spin Transfer Torque in Graphene

    Science.gov (United States)

    Lin, Chia-Ching; Chen, Zhihong

    2014-03-01

    Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

  7. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  8. Scaling the drop size in coflow experiments

    International Nuclear Information System (INIS)

    Castro-Hernandez, E; Gordillo, J M; Gundabala, V; Fernandez-Nieves, A

    2009-01-01

    We perform extensive experiments with coflowing liquids in microfluidic devices and provide a closed expression for the drop size as a function of measurable parameters in the jetting regime that accounts for the experimental observations; this expression works irrespective of how the jets are produced, providing a powerful design tool for this type of experiments.

  9. Scaling the drop size in coflow experiments

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Hernandez, E; Gordillo, J M [Area de Mecanica de Fluidos, Universidad de Sevilla, Avenida de los Descubrimientos s/n, 41092 Sevilla (Spain); Gundabala, V; Fernandez-Nieves, A [School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States)], E-mail: jgordill@us.es

    2009-07-15

    We perform extensive experiments with coflowing liquids in microfluidic devices and provide a closed expression for the drop size as a function of measurable parameters in the jetting regime that accounts for the experimental observations; this expression works irrespective of how the jets are produced, providing a powerful design tool for this type of experiments.

  10. Metallic spintronic devices

    CERN Document Server

    Wang, Xiaobin

    2014-01-01

    Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

  11. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  12. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2012-01-01

    In a new branch of physics and technology called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called 'spin current', are manipulated and controlled together. This book provides an introduction and guide to the new physics and application of spin current.

  13. PREFACE: Spin Electronics

    Science.gov (United States)

    Dieny, B.; Sousa, R.; Prejbeanu, L.

    2007-04-01

    Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

  14. Cavity optomechanics in a levitated helium drop

    Science.gov (United States)

    Childress, L.; Schmidt, M. P.; Kashkanova, A. D.; Brown, C. D.; Harris, G. I.; Aiello, A.; Marquardt, F.; Harris, J. G. E.

    2017-12-01

    We describe a proposal for a type of optomechanical system based on a drop of liquid helium that is magnetically levitated in vacuum. In the proposed device, the drop would serve three roles: its optical whispering-gallery modes would provide the optical cavity, its surface vibrations would constitute the mechanical element, and evaporation of He atoms from its surface would provide continuous refrigeration. We analyze the feasibility of such a system in light of previous experimental demonstrations of its essential components: magnetic levitation of mm-scale and cm-scale drops of liquid He , evaporative cooling of He droplets in vacuum, and coupling to high-quality optical whispering-gallery modes in a wide range of liquids. We find that the combination of these features could result in a device that approaches the single-photon strong-coupling regime, due to the high optical quality factors attainable at low temperatures. Moreover, the system offers a unique opportunity to use optical techniques to study the motion of a superfluid that is freely levitating in vacuum (in the case of 4He). Alternatively, for a normal fluid drop of 3He, we propose to exploit the coupling between the drop's rotations and vibrations to perform quantum nondemolition measurements of angular momentum.

  15. Dynamical spin accumulation in large-spin magnetic molecules

    Science.gov (United States)

    Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

    2018-01-01

    The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

  16. Impact of granular drops

    KAUST Repository

    Marston, J. O.

    2013-07-15

    We investigate the spreading and splashing of granular drops during impact with a solid target. The granular drops are formed from roughly spherical balls of sand mixed with water, which is used as a binder to hold the ball together during free-fall. We measure the instantaneous spread diameter for different impact speeds and find that the normalized spread diameter d/D grows as (tV/D)1/2. The speeds of the grains ejected during the “splash” are measured and they rarely exceed twice that of the impact speed.

  17. Impact of granular drops

    KAUST Repository

    Marston, J. O.; Mansoor, Mohammad M.; Thoroddsen, Sigurdur T

    2013-01-01

    We investigate the spreading and splashing of granular drops during impact with a solid target. The granular drops are formed from roughly spherical balls of sand mixed with water, which is used as a binder to hold the ball together during free-fall. We measure the instantaneous spread diameter for different impact speeds and find that the normalized spread diameter d/D grows as (tV/D)1/2. The speeds of the grains ejected during the “splash” are measured and they rarely exceed twice that of the impact speed.

  18. Novel Magnetic Devices

    National Research Council Canada - National Science Library

    Schuller, Ivan

    2007-01-01

    ...: ballistic magnetoresistance, magnetic field proximity effect and spin drag. These three phenomena would then be exploited for the design of novel device architectures and to investigate the physical principles behind these devices...

  19. Drop Performance Test of CRDMs for JRTR

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myoung-Hwan; Cho, Yeong-Garp; Chung, Jong-Ha [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kim, Jung-Hyun [POSCO Plandtec Co. Ltd, Ulsan (Korea, Republic of); Lee, Kwan-Hee [RIST, Pohang (Korea, Republic of)

    2015-10-15

    The drop test results of CRDMs with AC-type electromagnet show that the initial delay times are not satisfied with the requirement, 0.15 seconds. After the replacement of the electromagnet from AC-type to DCtype, the drop times of CARs and accelerations due to the impact of moving parts are satisfied with all requirements. As a result, it is found that four CRDMs to be installed at site have a good drop performance, and meet all performance requirements. A control rod drive mechanism (CRDM) is a device to control the position of a control absorber rod (CAR) in the core by using a stepping motor which is commanded by the reactor regulating system (RRS) to control the reactivity during the normal operation of the reactor. The top-mounted CRDM driven by the stepping motor for Jordan Research and Training Reactor (JRTR) has been developed in KAERI. The CRDM for JRTR has been optimized by the design improvement based on that of the HANARO. It is necessary to verify the performances such as the stepping, drop, endurance, vibration, seismic and structural integrity for active components. Especially, the CAR drop curves are important data for the safety analysis. This paper describes the test results to demonstrate the drop performances of a prototype and 4 CRDMs to be installed at site. The tests are carried out at a test rig simulating the actual reactor's conditions.

  20. Geometrical spin symmetry and spin

    International Nuclear Information System (INIS)

    Pestov, I. B.

    2011-01-01

    Unification of General Theory of Relativity and Quantum Mechanics leads to General Quantum Mechanics which includes into itself spindynamics as a theory of spin phenomena. The key concepts of spindynamics are geometrical spin symmetry and the spin field (space of defining representation of spin symmetry). The essence of spin is the bipolar structure of geometrical spin symmetry induced by the gravitational potential. The bipolar structure provides a natural derivation of the equations of spindynamics. Spindynamics involves all phenomena connected with spin and provides new understanding of the strong interaction.

  1. Two secondary drops

    Indian Academy of Sciences (India)

    Figure shows formation of two secondary drops of unequal size and their merger. The process is same as the earlier process until t= 0.039 Tc with necking occurring at two places, one at the bottom of the column and the other at the middle. The necking at the middle of the liquid column is due to Raleigh instability.

  2. Lambda-dropping

    DEFF Research Database (Denmark)

    Danvy, Olivier; Schultz, Ulrik Pagh

    1997-01-01

    Lambda-lifting a functional program transforms it into a set of recursive equations. We present the symmetric transformation: lambda-dropping. Lambda-dropping a set of recursive equations restores block structure and lexical scope.For lack of scope, recursive equations must carry around all...... the parameters that any of their callees might possibly need. Both lambda-lifting and lambda-dropping thus require one to compute a transitive closure over the call graph:• for lambda-lifting: to establish the Def/Use path of each free variable (these free variables are then added as parameters to each...... of the functions in the call path);• for lambda-dropping: to establish the Def/Use path of each parameter (parameters whose use occurs in the same scope as their definition do not need to be passed along in the call path).Without free variables, a program is scope-insensitive. Its blocks are then free...

  3. Excitation of coherent propagating spin waves by pure spin currents.

    Science.gov (United States)

    Demidov, Vladislav E; Urazhdin, Sergei; Liu, Ronghua; Divinskiy, Boris; Telegin, Andrey; Demokritov, Sergej O

    2016-01-28

    Utilization of pure spin currents not accompanied by the flow of electrical charge provides unprecedented opportunities for the emerging technologies based on the electron's spin degree of freedom, such as spintronics and magnonics. It was recently shown that pure spin currents can be used to excite coherent magnetization dynamics in magnetic nanostructures. However, because of the intrinsic nonlinear self-localization effects, magnetic auto-oscillations in the demonstrated devices were spatially confined, preventing their applications as sources of propagating spin waves in magnonic circuits using these waves as signal carriers. Here, we experimentally demonstrate efficient excitation and directional propagation of coherent spin waves generated by pure spin current. We show that this can be achieved by using the nonlocal spin injection mechanism, which enables flexible design of magnetic nanosystems and allows one to efficiently control their dynamic characteristics.

  4. Spin-inversion in nanoscale graphene sheets with a Rashba spin-orbit barrier

    Directory of Open Access Journals (Sweden)

    Somaieh Ahmadi

    2012-03-01

    Full Text Available Spin-inversion properties of an electron in nanoscale graphene sheets with a Rashba spin-orbit barrier is studied using transfer matrix method. It is found that for proper values of Rashba spin-orbit strength, perfect spin-inversion can occur in a wide range of electron incident angle near the normal incident. In this case, the graphene sheet with Rashba spin-orbit barrier can be considered as an electron spin-inverter. The efficiency of spin-inverter can increase up to a very high value by increasing the length of Rashba spin-orbit barrier. The effect of intrinsic spin-orbit interaction on electron spin inversion is then studied. It is shown that the efficiency of spin-inverter decreases slightly in the presence of intrinsic spin-orbit interaction. The present study can be used to design graphene-based spintronic devices.

  5. Spin injection into GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Bernhard

    2013-11-01

    In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

  6. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  7. Spin Transport in Semiconductor heterostructures

    International Nuclear Information System (INIS)

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  8. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  9. Electrochemical device

    Science.gov (United States)

    Grimes, Patrick G.; Einstein, Harry; Bellows, Richard J.

    1988-01-12

    A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

  10. Nuclear spins in nanostructures

    International Nuclear Information System (INIS)

    Coish, W.A.; Baugh, J.

    2009-01-01

    We review recent theoretical and experimental advances toward understanding the effects of nuclear spins in confined nanostructures. These systems, which include quantum dots, defect centers, and molecular magnets, are particularly interesting for their importance in quantum information processing devices, which aim to coherently manipulate single electron spins with high precision. On one hand, interactions between confined electron spins and a nuclear-spin environment provide a decoherence source for the electron, and on the other, a strong effective magnetic field that can be used to execute local coherent rotations. A great deal of effort has been directed toward understanding the details of the relevant decoherence processes and to find new methods to manipulate the coupled electron-nuclear system. A sequence of spectacular new results have provided understanding of spin-bath decoherence, nuclear spin diffusion, and preparation of the nuclear state through dynamic polarization and more general manipulation of the nuclear-spin density matrix through ''state narrowing.'' These results demonstrate the richness of this physical system and promise many new mysteries for the future. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  11. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  12. Controlling Vapor Pressure In Hanging-Drop Crystallization

    Science.gov (United States)

    Carter, Daniel C.; Smith, Robbie

    1988-01-01

    Rate of evaporation adjusted to produce larger crystals. Device helps to control vapor pressure of water and other solvents in vicinity of hanging drop of solution containing dissolved enzyme protein. Well of porous frit (sintered glass) holds solution in proximity to drop of solution containing protein or enzyme. Vapor from solution in frit controls evaporation of solvent from drop to control precipitation of protein or enzyme. With device, rate of nucleation limited to decrease number and increase size (and perhaps quality) of crystals - large crystals of higher quality needed for x-ray diffraction studies of macromolecules.

  13. Quantum spin transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, Christoph

    2012-05-15

    In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

  14. Quantum spin transport in semiconductor nanostructures

    International Nuclear Information System (INIS)

    Schindler, Christoph

    2012-01-01

    In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

  15. Experimental Realization of a Quantum Spin Pump

    DEFF Research Database (Denmark)

    Watson, Susan; Potok, R.; M. Marcus, C.

    2003-01-01

    We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin-dependent by the a......We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic fluctuations of pumped current, made spin......-dependent by the application of an in-plane Zeeman field. Spin currents are measured by placing the pump in a focusing geometry with a spin-selective collector....

  16. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  17. Dropping out of school

    Directory of Open Access Journals (Sweden)

    M. Teneva

    2017-09-01

    Full Text Available The modern technological society needs educated people who, through their high professionalism, are called upon to create its progress. In this aspect, a serious problem stands out – the dropout from school of a large number of children, adolescents and young people. The object of the research is the premature interruption of training for a large number of Bulgarian students. The subject of the study is the causes that provoke the students’ dropping out of school. The aim is to differentiate the negative factors leading to dropping out of school, and to identify the motivating factors that encourage the individual to return to the educational environment. In order to realize the so set target, a specially designed test-questionnaire has been used. The survey was conducted among students attending evening courses who have left their education for various reasons and are currently back to the school institution. The contingent of the study includes 120 students from the evening schools. The results indicate that the reasons which prompted the students to leave school early differentiate into four groups: family, social, economic, educational, personal. The motivation to return to school has been dictated in the highest degree by the need for realization of the person on the labor market, followed by the possibility for full social functioning.

  18. Drop jumping. II. The influence of dropping height on the biomechanics of drop jumping

    NARCIS (Netherlands)

    Bobbert, M F; Huijing, P A; van Ingen Schenau, G J

    In the literature, athletes preparing for explosive activities are recommended to include drop jumping in their training programs. For the execution of drop jumps, different techniques and different dropping heights can be used. This study was designed to investigate for the performance of bounce

  19. Controlling charge on levitating drops.

    Science.gov (United States)

    Hilger, Ryan T; Westphall, Michael S; Smith, Lloyd M

    2007-08-01

    Levitation technologies are used in containerless processing of materials, as microscale manipulators and reactors, and in the study of single drops and particles. Presented here is a method for controlling the amount and polarity of charge on a levitating drop. The method uses single-axis acoustic levitation to trap and levitate a single, initially neutral drop with a diameter between 400 microm and 2 mm. This drop is then charged in a controllable manner using discrete packets of charge in the form of charged drops produced by a piezoelectric drop-on-demand dispenser equipped with a charging electrode. The magnitude of the charge on the dispensed drops can be adjusted by varying the voltage applied to the charging electrode. The polarity of the charge on the added drops can be changed allowing removal of charge from the trapped drop (by neutralization) and polarity reversal. The maximum amount of added charge is limited by repulsion of like charges between the drops in the trap. This charging scheme can aid in micromanipulation and the study of charged drops and particles using levitation.

  20. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2017-01-01

    Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

  1. Spin doctoring

    OpenAIRE

    Vozková, Markéta

    2011-01-01

    1 ABSTRACT The aim of this text is to provide an analysis of the phenomenon of spin doctoring in the Euro-Atlantic area. Spin doctors are educated people in the fields of semiotics, cultural studies, public relations, political communication and especially familiar with the infrastructure and the functioning of the media industry. Critical reflection of manipulative communication techniques puts spin phenomenon in historical perspective and traces its practical use in today's social communica...

  2. Enhanced magnetoresistance in graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-05-01

    Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

  3. Shot noise of spin current and spin transfer torque

    Science.gov (United States)

    Yu, Yunjin; Zhan, Hongxin; Wan, Langhui; Wang, Bin; Wei, Yadong; Sun, Qingfeng; Wang, Jian

    2013-04-01

    We report the theoretical investigation of the shot noise of the spin current (Sσ) and the spin transfer torque (Sτ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear Sσ - V and Sτ - V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage Nτ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque Nτ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period Nτ(θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters.

  4. Shot noise of spin current and spin transfer torque

    International Nuclear Information System (INIS)

    Yu Yunjin; Zhan Hongxin; Wan Langhui; Wang Bin; Wei Yadong; Sun Qingfeng; Wang Jian

    2013-01-01

    We report the theoretical investigation of the shot noise of the spin current (S σ ) and the spin transfer torque (S τ ) for non-collinear spin polarized transport in a spin-valve device which consists of a normal scattering region connected by two ferromagnetic electrodes (MNM system). Our theory was developed using the non-equilibrium Green’s function method, and general nonlinear S σ − V and S τ − V relations were derived as a function of the angle θ between the magnetizations of two leads. We have applied our theory to a quantum dot system with a resonant level coupled with two ferromagnetic electrodes. It was found that, for the MNM system, the auto-correlation of the spin current is enough to characterize the fluctuation of the spin current. For a system with three ferromagnetic layers, however, both auto-correlation and cross-correlation of the spin current are needed to characterize the noise of the spin current. For a quantum dot with a resonant level, the derivative of spin torque with respect to bias voltage is proportional to sinθ when the system is far away from resonance. When the system is near resonance, the spin transfer torque becomes a non-sinusoidal function of θ. The derivative of the noise of the spin transfer torque with respect to the bias voltage N τ behaves differently when the system is near or far away from resonance. Specifically, the differential shot noise of the spin transfer torque N τ is a concave function of θ near resonance while it becomes a convex function of θ far away from resonance. For certain bias voltages, the period N τ (θ) becomes π instead of 2π. For small θ, it was found that the differential shot noise of the spin transfer torque is very sensitive to the bias voltage and the other system parameters. (paper)

  5. Spin voltage generation through optical excitation of complementary spin populations

    Science.gov (United States)

    Bottegoni, Federico; Celebrano, Michele; Bollani, Monica; Biagioni, Paolo; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco

    2014-08-01

    By exploiting the spin degree of freedom of carriers inside electronic devices, spintronics has a huge potential for quantum computation and dissipationless interconnects. Pure spin currents in spintronic devices should be driven by a spin voltage generator, able to drive the spin distribution out of equilibrium without inducing charge currents. Ideally, such a generator should operate at room temperature, be highly integrable with existing semiconductor technology, and not interfere with other spintronic building blocks that make use of ferromagnetic materials. Here we demonstrate a device that matches these requirements by realizing the spintronic equivalent of a photovoltaic generator. Whereas a photovoltaic generator spatially separates photoexcited electrons and holes, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite in-plane spin projections. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). The resulting light diffraction pattern features a spatially modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

  6. Spin injection and transport in semiconductor and metal nanostructures

    Science.gov (United States)

    Zhu, Lei

    In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

  7. Quantum spin circulator in Y junctions of Heisenberg chains

    Science.gov (United States)

    Buccheri, Francesco; Egger, Reinhold; Pereira, Rodrigo G.; Ramos, Flávia B.

    2018-06-01

    We show that a quantum spin circulator, a nonreciprocal device that routes spin currents without any charge transport, can be achieved in Y junctions of identical spin-1 /2 Heisenberg chains coupled by a chiral three-spin interaction. Using bosonization, boundary conformal field theory, and density matrix renormalization group simulations, we find that a chiral fixed point with maximally asymmetric spin conductance arises at a critical point separating a regime of disconnected chains from a spin-only version of the three-channel Kondo effect. We argue that networks of spin-chain Y junctions provide a controllable approach to construct long-sought chiral spin-liquid phases.

  8. Spin 1990

    International Nuclear Information System (INIS)

    Anton, Gisela

    1990-01-01

    The idea of the intrinsic angular momentum, or 'spin', of a particle has played an essential part in fundamental physics for more than 60 years, and its continuing importance was underlined at the 9th International Symposium on High Energy Spin Physics, held in September in Bonn.

  9. Spin 1990

    Energy Technology Data Exchange (ETDEWEB)

    Anton, Gisela

    1990-12-15

    The idea of the intrinsic angular momentum, or 'spin', of a particle has played an essential part in fundamental physics for more than 60 years, and its continuing importance was underlined at the 9th International Symposium on High Energy Spin Physics, held in September in Bonn.

  10. Spin tomography

    Energy Technology Data Exchange (ETDEWEB)

    D' Ariano, G M [Quantum Optics and Information Group, INFM Udr Pavia, Dipartimento di Fisica ' Alessandro Volta' and INFM, Via Bassi 6, 27100 Pavia (Italy); Maccone, L [Quantum Optics and Information Group, INFM Udr Pavia, Dipartimento di Fisica ' Alessandro Volta' and INFM, Via Bassi 6, 27100 Pavia (Italy); Paini, M [Quantum Optics and Information Group, INFM Udr Pavia, Dipartimento di Fisica ' Alessandro Volta' and INFM, Via Bassi 6, 27100 Pavia (Italy)

    2003-02-01

    We propose a tomographic reconstruction scheme for spin states. The experimental set-up, which is a modification of the Stern-Gerlach scheme, can be easily performed with currently available technology. The method is generalized to multiparticle states, analysing the spin-1/2 case for indistinguishable particles. Some Monte Carlo numerical simulations are given to illustrate the technique.

  11. Spin tomography

    International Nuclear Information System (INIS)

    D'Ariano, G M; Maccone, L; Paini, M

    2003-01-01

    We propose a tomographic reconstruction scheme for spin states. The experimental set-up, which is a modification of the Stern-Gerlach scheme, can be easily performed with currently available technology. The method is generalized to multiparticle states, analysing the spin-1/2 case for indistinguishable particles. Some Monte Carlo numerical simulations are given to illustrate the technique

  12. Spintronics in nanoscale devices

    CERN Document Server

    Hedin, Eric R

    2013-01-01

    By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

  13. Spin glasses

    CERN Document Server

    Bovier, Anton

    2007-01-01

    Spin glass theory is going through a stunning period of progress while finding exciting new applications in areas beyond theoretical physics, in particular in combinatorics and computer science. This collection of state-of-the-art review papers written by leading experts in the field covers the topic from a wide variety of angles. The topics covered are mean field spin glasses, including a pedagogical account of Talagrand's proof of the Parisi solution, short range spin glasses, emphasizing the open problem of the relevance of the mean-field theory for lattice models, and the dynamics of spin glasses, in particular the problem of ageing in mean field models. The book will serve as a concise introduction to the state of the art of spin glass theory, usefull to both graduate students and young researchers, as well as to anyone curious to know what is going on in this exciting area of mathematical physics.

  14. Spin symposium

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1989-01-15

    The recent 8th International Symposium on High Energy Spin Physics at the University of Minnesota in Minneapolis, Minnesota, opened with a bang when L. Pondrom (Wisconsin), donning a hard hat borrowed from construction workers, ventured that 'spin, the notorious inessential complication of hadronic physics, is finally telling us what real QCD (quantum chromodynamics, the field theory of quarks and gluons) looks like.' He was referring to an animated discussion on the meaning of the recent spin oriented (polarized) scattering results from the European Muon Collaboration (EMC) at CERN and reported at the Symposium by R. Garnet (Liverpool) and P. Schuler (Yale) which show that the proton spin is not simply a reflection of the spins of its constituent quarks.

  15. Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

    Science.gov (United States)

    Sasaki, Tomoyuki; Ando, Yuichiro; Kameno, Makoto; Tahara, Takayuki; Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Shiraishi, Masashi

    2014-09-01

    Spin transport in nondegenerate semiconductors is expected to pave the way to the creation of spin transistors, spin logic devices, and reconfigurable logic circuits, because room-temperature (RT) spin transport in Si has already been achieved. However, RT spin transport has been limited to degenerate Si, which makes it difficult to produce spin-based signals because a gate electric field cannot be used to manipulate such signals. Here, we report the experimental demonstration of spin transport in nondegenerate Si with a spin metal-oxide-semiconductor field-effect transistor (MOSFET) structure. We successfully observe the modulation of the Hanle-type spin-precession signals, which is a characteristic spin dynamics in nondegenerate semiconductors. We obtain long spin transport of more than 20 μm and spin rotation greater than 4π at RT. We also observe gate-induced modulation of spin-transport signals at RT. The modulation of the spin diffusion length as a function of a gate voltage is successfully observed, which we attribute to the Elliott-Yafet spin relaxation mechanism. These achievements are expected to lead to the creation of practical Si-based spin MOSFETs.

  16. The classical and quantum dynamics of molecular spins on graphene

    Science.gov (United States)

    Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Ana; Luis, Fernando; Dressel, Martin; Rauschenbach, Stephan; Kern, Klaus; Burghard, Marko; Bogani, Lapo

    2016-02-01

    Controlling the dynamics of spins on surfaces is pivotal to the design of spintronic and quantum computing devices. Proposed schemes involve the interaction of spins with graphene to enable surface-state spintronics and electrical spin manipulation. However, the influence of the graphene environment on the spin systems has yet to be unravelled. Here we explore the spin-graphene interaction by studying the classical and quantum dynamics of molecular magnets on graphene. Whereas the static spin response remains unaltered, the quantum spin dynamics and associated selection rules are profoundly modulated. The couplings to graphene phonons, to other spins, and to Dirac fermions are quantified using a newly developed model. Coupling to Dirac electrons introduces a dominant quantum relaxation channel that, by driving the spins over Villain’s threshold, gives rise to fully coherent, resonant spin tunnelling. Our findings provide fundamental insight into the interaction between spins and graphene, establishing the basis for electrical spin manipulation in graphene nanodevices.

  17. A pressure drop model for PWR grids

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Dong Seok; In, Wang Ki; Bang, Je Geon; Jung, Youn Ho; Chun, Tae Hyun [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1999-12-31

    A pressure drop model for the PWR grids with and without mixing device is proposed at single phase based on the fluid mechanistic approach. Total pressure loss is expressed in additive way for form and frictional losses. The general friction factor correlations and form drag coefficients available in the open literatures are used to the model. As the results, the model shows better predictions than the existing ones for the non-mixing grids, and reasonable agreements with the available experimental data for mixing grids. Therefore it is concluded that the proposed model for pressure drop can provide sufficiently good approximation for grid optimization and design calculation in advanced grid development. 7 refs., 3 figs., 3 tabs. (Author)

  18. A pressure drop model for PWR grids

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Dong Seok; In, Wang Ki; Bang, Je Geon; Jung, Youn Ho; Chun, Tae Hyun [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1998-12-31

    A pressure drop model for the PWR grids with and without mixing device is proposed at single phase based on the fluid mechanistic approach. Total pressure loss is expressed in additive way for form and frictional losses. The general friction factor correlations and form drag coefficients available in the open literatures are used to the model. As the results, the model shows better predictions than the existing ones for the non-mixing grids, and reasonable agreements with the available experimental data for mixing grids. Therefore it is concluded that the proposed model for pressure drop can provide sufficiently good approximation for grid optimization and design calculation in advanced grid development. 7 refs., 3 figs., 3 tabs. (Author)

  19. Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

    Science.gov (United States)

    Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

    2017-12-01

    Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

  20. Nanosized perpendicular organic spin-valves

    Energy Technology Data Exchange (ETDEWEB)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Richter, Tim [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Fuhrmann, Bodo [Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de [Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany); Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)

    2015-03-09

    A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

  1. Beam Splitter for Spin Waves in Quantum Spin Network

    OpenAIRE

    Yang, S.; Song, Z.; Sun, C. P.

    2005-01-01

    We theoretically design and analytically study a controllable beam splitter for the spin wave propagating in a star-shaped (e.g., a $Y$-shaped beam) spin network. Such a solid state beam splitter can display quantum interference and quantum entanglement by the well-aimed controls of interaction on nodes. It will enable an elementary interferometric device for scalable quantum information processing based on the solid system.

  2. Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

    Science.gov (United States)

    Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

    2017-11-09

    Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

  3. On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

    Directory of Open Access Journals (Sweden)

    A.A. Baker

    Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

  4. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-01-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

  5. Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

    NARCIS (Netherlands)

    Dejene, F. K.; Flipse, J.; van Wees, B. J.

    2012-01-01

    We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

  6. Spin systems

    CERN Document Server

    Caspers, W J

    1989-01-01

    This book is about spin systems as models for magnetic materials, especially antiferromagnetic lattices. Spin-systems are well-defined models, for which, in special cases, exact properties may be derived. These special cases are for the greater part, one- dimensional and restricted in their applicability, but they may give insight into general properties that also exist in higher dimension. This work pays special attention to qualitative differences between spin lattices of different dimensions. It also replaces the traditional picture of an (ordered) antiferromagnetic state of a Heisenberg sy

  7. Hanging drop crystal growth apparatus

    Science.gov (United States)

    Naumann, Robert J. (Inventor); Witherow, William K. (Inventor); Carter, Daniel C. (Inventor); Bugg, Charles E. (Inventor); Suddath, Fred L. (Inventor)

    1990-01-01

    This invention relates generally to control systems for controlling crystal growth, and more particularly to such a system which uses a beam of light refracted by the fluid in which crystals are growing to detect concentration of solutes in the liquid. In a hanging drop apparatus, a laser beam is directed onto drop which refracts the laser light into primary and secondary bows, respectively, which in turn fall upon linear diode detector arrays. As concentration of solutes in drop increases due to solvent removal, these bows move farther apart on the arrays, with the relative separation being detected by arrays and used by a computer to adjust solvent vapor transport from the drop. A forward scattering detector is used to detect crystal nucleation in drop, and a humidity detector is used, in one embodiment, to detect relative humidity in the enclosure wherein drop is suspended. The novelty of this invention lies in utilizing angular variance of light refracted from drop to infer, by a computer algorithm, concentration of solutes therein. Additional novelty is believed to lie in using a forward scattering detector to detect nucleating crystallites in drop.

  8. Spin Conference

    International Nuclear Information System (INIS)

    Anon.

    1983-01-01

    The 5th International Symposium on High Energy Spin Physics met in September at Brookhaven. The symposium has evolved to include a number of diverse specialities: theory, including parity violations and proposed quantum chromodynamics (QCD) tests with polarized beams; experiment, including the large spin effects discovered in high transverse momentum elastic scattering and hyperon production, dibaryons, and magnetic moments; acceleration and storage of polarized protons and electrons; and development of polarized sources and targets

  9. Extrinsic spin Hall effect in graphene

    Science.gov (United States)

    Rappoport, Tatiana

    The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

  10. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  11. Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

    Energy Technology Data Exchange (ETDEWEB)

    Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

    2013-12-02

    From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

  12. Multi-Valued Spin Switch in a Semiconductor Microcavity

    Science.gov (United States)

    Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

    2011-12-01

    In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

  13. Bipolar spintronics: from spin injection to spin-controlled logic

    International Nuclear Information System (INIS)

    Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

    2007-01-01

    An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

  14. 45-FOOT HIGH DROP TOWER

    Data.gov (United States)

    Federal Laboratory Consortium — The Drop Tower is used to simulate and measure the impact shocks that are exerted on parachute loads when they hit the ground. It is also used for HSL static lift to...

  15. Charge-induced spin torque in Weyl semimetals

    Science.gov (United States)

    Kurebayashi, Daichi; Nomura, Kentaro

    In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

  16. Simulating realistic implementations of spin field effect transistor

    Science.gov (United States)

    Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2011-04-01

    The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

  17. Spin-current diode with a ferromagnetic semiconductor

    International Nuclear Information System (INIS)

    Sun, Qing-Feng; Xie, X. C.

    2015-01-01

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

  18. Effect of humidity on the filter pressure drop

    International Nuclear Information System (INIS)

    Vendel, J.; Letourneau, P.

    1995-01-01

    The effects of humidity on the filter pressure drop have been reported in some previous studies in which it is difficult to draw definite conclusions. These studies show contradictory effects of humidity on the pressure drop probably due to differences in the hygroscopicity of the test aerosols. The objective of this paper is to present experimental results on the evolution of the filter pressure drop versus mass loading, for different test aerosols and relative humidities. Present results are compared to those found in various publication. An experimental device has been designed to measure filter pressure drop as the function of the areal density for relative humidity varying in the range of 9 % to 85 %. Experiments have been conducted with hygroscopic: (CsOH) and nonhygroscopic aerosols (TiO 2 ). Cesium hydroxyde (CsOH) of size of 2 μ M AMMD has been generated by an ultrasonic generator and the 0.7 μm AMMD titanium oxyde has been dispersed by a open-quotes turn-tableclose quotes generator. As it is noted in the BISWAS'publication [3], present results show, in the case of nonhygroscopic aerosols, a linear relationship of pressure drop to mass loading. For hygroscopic aerosols two cases must be considered: for relative humidity below the deliquescent point of the aerosol, the relationship of pressure drop to mass loading remains linear; above the deliquescent point, the results show a sudden increase in the pressure drop and the mass capacity of the filter is drastically reduced

  19. Measurement of an Evaporating Drop on a Reflective Substrate

    Science.gov (United States)

    Chao, David F.; Zhang, Nengli

    2004-01-01

    A figure depicts an apparatus that simultaneously records magnified ordinary top-view video images and laser shadowgraph video images of a sessile drop on a flat, horizontal substrate that can be opaque or translucent and is at least partially specularly reflective. The diameter, contact angle, and rate of evaporation of the drop as functions of time can be calculated from the apparent diameters of the drop in sequences of the images acquired at known time intervals, and the shadowgrams that contain flow patterns indicative of thermocapillary convection (if any) within the drop. These time-dependent parameters and flow patterns are important for understanding the physical processes involved in the spreading and evaporation of drops. The apparatus includes a source of white light and a laser (both omitted from the figure), which are used to form the ordinary image and the shadowgram, respectively. Charge-coupled-device (CCD) camera 1 (with zoom) acquires the ordinary video images, while CCD camera 2 acquires the shadowgrams. With respect to the portion of laser light specularly reflected from the substrate, the drop acts as a plano-convex lens, focusing the laser beam to a shadowgram on the projection screen in front of CCD camera 2. The equations for calculating the diameter, contact angle, and rate of evaporation of the drop are readily derived on the basis of Snell s law of refraction and the geometry of the optics.

  20. Effect of humidity on the filter pressure drop

    Energy Technology Data Exchange (ETDEWEB)

    Vendel, J.; Letourneau, P. [Institut de Protection et de Surete Nucleaire, Gif-sur-Yvette (France)

    1995-02-01

    The effects of humidity on the filter pressure drop have been reported in some previous studies in which it is difficult to draw definite conclusions. These studies show contradictory effects of humidity on the pressure drop probably due to differences in the hygroscopicity of the test aerosols. The objective of this paper is to present experimental results on the evolution of the filter pressure drop versus mass loading, for different test aerosols and relative humidities. Present results are compared to those found in various publication. An experimental device has been designed to measure filter pressure drop as the function of the areal density for relative humidity varying in the range of 9 % to 85 %. Experiments have been conducted with hygroscopic: (CsOH) and nonhygroscopic aerosols (TiO{sub 2}). Cesium hydroxyde (CsOH) of size of 2 {mu} M AMMD has been generated by an ultrasonic generator and the 0.7 {mu}m AMMD titanium oxyde has been dispersed by a {open_quotes}turn-table{close_quotes} generator. As it is noted in the BISWAS`publication [3], present results show, in the case of nonhygroscopic aerosols, a linear relationship of pressure drop to mass loading. For hygroscopic aerosols two cases must be considered: for relative humidity below the deliquescent point of the aerosol, the relationship of pressure drop to mass loading remains linear; above the deliquescent point, the results show a sudden increase in the pressure drop and the mass capacity of the filter is drastically reduced.

  1. Electrostatic charging and levitation of helium II drops

    International Nuclear Information System (INIS)

    Niemela, J.J.

    1997-01-01

    Liquid Helium II drops, of diameter 1 mm or less, are charged with positive helium ions and subsequently levitated by static electric fields. Stable levitation was achieved for drops of order 100-150 micrometers in diameter. The suspended drops could be translated to arbitrary positions within the levitator using additional superimposed DC electric fields, and also could be made to oscillate stably about their average positions by means of an applied time-varying electric field. A weak corona discharge was used to produce the necessary ions for levitation. A novel superfluid film flow device, developed for the controlled deployment of large charged drops, is described. Also discussed is an adjustable electric fountain that requires only a field emission tip operating at modest potentials, and works in both Helium I and Helium II

  2. Spin Filters as High-Performance Spin Polarimeters

    International Nuclear Information System (INIS)

    Rougemaille, N.; Lampel, G.; Peretti, J.; Drouhin, H.-J.; Lassailly, Y.; Filipe, A.; Wirth, T.; Schuhl, A.

    2003-01-01

    A spin-dependent transport experiment in which hot electrons pass through a ferromagnetic metal / semiconductor Schottky diode has been performed. A spin-polarized free-electron beam, emitted in vacuum from a GaAs photocathode, is injected into the thin metal layer with an energy between 5 and 1000 eV above to the Fermi level. The transmitted current collected in the semiconductor substrate increases with injection energy because of secondary - electron multiplication. The spin-dependent part of the transmitted current is first constant up to about 100 eV and then increases by 4 orders of magnitude. As an immediate application, the solid-state hybrid structure studied here leads to a very efficient and compact device for spin polarization detection

  3. Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

    Science.gov (United States)

    Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

    2017-11-01

    The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

  4. Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

    Science.gov (United States)

    McCamey, D. R.; Van Tol, J.; Morley, G. W.; Boehme, C.

    2010-12-01

    Electron spins are strong candidates with which to implement spintronics because they are both mobile and able to be manipulated. The relatively short lifetimes of electron spins, however, present a problem for the long-term storage of spin information. We demonstrated an ensemble nuclear spin memory in phosphorous-doped silicon, which can be read out electrically and has a lifetime exceeding 100 seconds. The electronic spin information can be mapped onto and stored in the nuclear spin of the phosphorus donors, and the nuclear spins can then be repetitively read out electrically for time periods that exceed the electron spin lifetime. We discuss how this memory can be used in conjunction with other silicon spintronic devices.

  5. Spin modes

    International Nuclear Information System (INIS)

    Gaarde, C.

    1985-01-01

    An analysis of spectra of (p,n) reactions showed that they were very selective in exciting spin modes. Charge exchange reactions at intermediate energies give important new understanding of the M1-type of excitations and of the spin structure of continuum p spectra in general. In this paper, the author discusses three charge exchange reactions: (p,n); ( 3 H,t); and (d,2p) at several targets. Low-lying states and the Δ region are discussed separately. Finally, the charge exchange reaction with heavy ion beams is briefly discussed. (G.J.P./Auth.)

  6. Playing with water drops: from wetting to optics through electrostatics

    International Nuclear Information System (INIS)

    Domps, A; Roques-Carmes, T

    2011-01-01

    We present a consistent series of activities, including experiments and basic computational studies, investigating the shape and optical properties of water drops in connection with novel technological devices. Most of the work can be carried out with simple teaching equipment and is well suited to undergraduate students. Firstly, we show how the mass variations of a sessile drop can be used to control its curvature and hence to produce lenses with tunable focal distance. Alternatively, the shape of the drop can be varied using electrowetting on dielectric (EWOD). We propose a simple pedagogical approach to this phenomenon in connection with historical electrostatic apparatus. A detailed process for the preparation of an EWOD device is given, together with a focimetric method allowing the analysis of electrowetting effects in practical exercises. Finally, the manipulations of a commercialized variable focus lens illustrate that EWOD is at the heart of most recent technological developments, making practical work in optics more attractive than traditional exercises using conventional lenses.

  7. Playing with Water Drops: From Wetting to Optics through Electrostatics

    Science.gov (United States)

    Domps, A.; Roques-Carmes, T.

    2011-01-01

    We present a consistent series of activities, including experiments and basic computational studies, investigating the shape and optical properties of water drops in connection with novel technological devices. Most of the work can be carried out with simple teaching equipment and is well suited to undergraduate students. Firstly, we show how the…

  8. Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

  9. DROpS: an object of learning in computer simulation of discrete events

    Directory of Open Access Journals (Sweden)

    Hugo Alves Silva Ribeiro

    2015-09-01

    Full Text Available This work presents the “Realistic Dynamics Of Simulated Operations” (DROpS, the name given to the dynamics using the “dropper” device as an object of teaching and learning. The objective is to present alternatives for professors teaching content related to simulation of discrete events to graduate students in production engineering. The aim is to enable students to develop skills related to data collection, modeling, statistical analysis, and interpretation of results. This dynamic has been developed and applied to the students by placing them in a situation analogous to a real industry, where various concepts related to computer simulation were discussed, allowing the students to put these concepts into practice in an interactive manner, thus facilitating learning

  10. Spinning worlds

    NARCIS (Netherlands)

    Schwarz, H.

    2017-01-01

    The thesis "Spinning Worlds" is about the characterisation of two types of gas-giant exoplanets: Hot Jupiters, with orbital periods of fewer than five days, and young, wide-orbit gas giants, with orbital periods as long as thousands of years. The thesis is based on near-infrared observations of 1

  11. Spins Dynamics in a Dissipative Environment: Hierarchal Equations of Motion Approach Using a Graphics Processing Unit (GPU).

    Science.gov (United States)

    Tsuchimoto, Masashi; Tanimura, Yoshitaka

    2015-08-11

    A system with many energy states coupled to a harmonic oscillator bath is considered. To study quantum non-Markovian system-bath dynamics numerically rigorously and nonperturbatively, we developed a computer code for the reduced hierarchy equations of motion (HEOM) for a graphics processor unit (GPU) that can treat the system as large as 4096 energy states. The code employs a Padé spectrum decomposition (PSD) for a construction of HEOM and the exponential integrators. Dynamics of a quantum spin glass system are studied by calculating the free induction decay signal for the cases of 3 × 2 to 3 × 4 triangular lattices with antiferromagnetic interactions. We found that spins relax faster at lower temperature due to transitions through a quantum coherent state, as represented by the off-diagonal elements of the reduced density matrix, while it has been known that the spins relax slower due to suppression of thermal activation in a classical case. The decay of the spins are qualitatively similar regardless of the lattice sizes. The pathway of spin relaxation is analyzed under a sudden temperature drop condition. The Compute Unified Device Architecture (CUDA) based source code used in the present calculations is provided as Supporting Information .

  12. Spin lattices of walking droplets

    Science.gov (United States)

    Saenz, Pedro; Pucci, Giuseppe; Goujon, Alexis; Dunkel, Jorn; Bush, John

    2017-11-01

    We present the results of an experimental investigation of the spontaneous emergence of collective behavior in spin lattice of droplets walking on a vibrating fluid bath. The bottom topography consists of relatively deep circular wells that encourage the walking droplets to follow circular trajectories centered at the lattice sites, in one direction or the other. Wave-mediated interactions between neighboring drops are enabled through a thin fluid layer between the wells. The sense of rotation of the walking droplets may thus become globally coupled. When the coupling is sufficiently strong, interactions with neighboring droplets may result in switches in spin that lead to preferred global arrangements, including correlated (all drops rotating in the same direction) or anti-correlated (neighboring drops rotating in opposite directions) states. Analogies with ferromagnetism and anti-ferromagnetism are drawn. Different spatial arrangements are presented in 1D and 2D lattices to illustrate the effects of topological frustration. This work was supported by the US National Science Foundation through Grants CMMI-1333242 and DMS-1614043.

  13. Drop Spreading with Random Viscosity

    Science.gov (United States)

    Xu, Feng; Jensen, Oliver

    2016-11-01

    Airway mucus acts as a barrier to protect the lung. However as a biological material, its physical properties are known imperfectly and can be spatially heterogeneous. In this study we assess the impact of these uncertainties on the rate of spreading of a drop (representing an inhaled aerosol) over a mucus film. We model the film as Newtonian, having a viscosity that depends linearly on the concentration of a passive solute (a crude proxy for mucin proteins). Given an initial random solute (and hence viscosity) distribution, described as a Gaussian random field with a given correlation structure, we seek to quantify the uncertainties in outcomes as the drop spreads. Using lubrication theory, we describe the spreading of the drop in terms of a system of coupled nonlinear PDEs governing the evolution of film height and the vertically-averaged solute concentration. We perform Monte Carlo simulations to predict the variability in the drop centre location and width (1D) or area (2D). We show how simulation results are well described (at much lower computational cost) by a low-order model using a weak disorder expansion. Our results show for example how variability in the drop location is a non-monotonic function of the solute correlation length increases. Engineering and Physical Sciences Research Council.

  14. Thermocapillary reorientation of Janus drops

    Science.gov (United States)

    Rosales, Rodolfo; Saenz, Pedro

    2017-11-01

    Janus drops, named after the Ancient Roman two-faced god, are liquid drops formed from two immiscible fluids. Experimental observations indicate that a Janus drop may re-orientate in response to an applied external thermal gradient due to the Marangoni effect. Depending on the angle between the interior interface and the direction of the temperature gradient, disparities in the physical properties of the constituent liquids may lead to asymmetries in the thermocapillary flow. As a result, the drop will move along a curved path until a torque-free configuration is achieved, point after which it will continue on a straight trajectory. Here, we present the results of a theoretical investigation of this realignment phenomenon in the Stokes regime and in the limit of non-deformable interfaces. A 3D semi-analytical method in terms of polar spherical harmonics is developed to characterize and rationalize the hydrodynamic response (forces and torques), flow (velocity and temperature distribution) and trajectory of a Janus drop moving during the temperature-driven reorientation process. Furthermore, we discuss how this phenomenon may be exploited to develop dynamically reconfigurable micro-lenses. This work was partially supported by the US National Science Foundation through Grants DMS-1614043 and DMS-1719637.

  15. Spin Orbit Torque in Ferromagnetic Semiconductors

    KAUST Repository

    Li, Hang

    2016-06-21

    Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

  16. DropBot: An open-source digital microfluidic control system with precise control of electrostatic driving force and instantaneous drop velocity measurement

    International Nuclear Information System (INIS)

    Fobel, Ryan; Fobel, Christian; Wheeler, Aaron R.

    2013-01-01

    We introduce DropBot: an open-source instrument for digital microfluidics (http://microfluidics.utoronto.ca/dropbot). DropBot features two key functionalities for digital microfluidics: (1) real-time monitoring of instantaneous drop velocity (which we propose is a proxy for resistive forces), and (2) application of constant electrostatic driving forces through compensation for amplifier-loading and device capacitance. We anticipate that this system will enhance insight into failure modes and lead to new strategies for improved device reliability, and will be useful for the growing number of users who are adopting digital microfluidics for automated, miniaturized laboratory operation.

  17. Interfacial Instabilities in Evaporating Drops

    Science.gov (United States)

    Moffat, Ross; Sefiane, Khellil; Matar, Omar

    2007-11-01

    We study the effect of substrate thermal properties on the evaporation of sessile drops of various liquids. An infra-red imaging technique was used to record the interfacial temperature. This technique illustrates the non-uniformity in interfacial temperature distribution that characterises the evaporation process. Our results also demonstrate that the evaporation of methanol droplets is accompanied by the formation of wave-trains in the interfacial temperature field; similar patterns, however, were not observed in the case of water droplets. More complex patterns are observed for FC-72 refrigerant drops. The effect of substrate thermal conductivity on the structure of the complex pattern formation is also elucidated.

  18. Spin injection and detection in lateral spin valves with hybrid interfaces

    Science.gov (United States)

    Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

    2018-06-01

    Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

  19. Drop deformation and breakup in a partially filled horizontal rotating cylinder

    Science.gov (United States)

    White, Andrew; Pereira, Caroline; Hyacinthe, Hyaquino; Ward, Thomas

    2014-11-01

    Drop deformation and breakup due to shear flow has been studied extensively in Couette devices as well as in gravity-driven flows. In these cases shear is generated either by the moving wall or the drop's motion. For such flows the drop shape remains unperturbed at low capillary number (Ca), deforms at moderate Ca , and can experience breakup as Ca --> 1 and larger. Here single drops of NaOH(aq) will be placed in a horizontal cylindrical rotating tank partially filled with vegetable oil resulting in 10-2 saponification, can yield lower minimum surface tensions and faster adsorption than non-reactive surfactant systems. Oil films between the wall and drop as well as drop shape will be observed as rotation rates and NaOH(aq) concentration are varied. Results will be presented in the context of previous work on bubble and drop shapes and breakup. NSF CBET #1262718.

  20. A white beam neutron spin splitter

    International Nuclear Information System (INIS)

    Krist, T.; Klose, F.; Felcher, G.P.

    1997-01-01

    The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co 0.11 Fe 0.89 supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 angstrom -1 , whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths

  1. Antiresonance induced spin-polarized current generation

    Science.gov (United States)

    Yin, Sun; Min, Wen-Jing; Gao, Kun; Xie, Shi-Jie; Liu, De-Sheng

    2011-12-01

    According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

  2. A white beam neutron spin splitter

    Energy Technology Data Exchange (ETDEWEB)

    Krist, T. [Hahn Meitner Institute, Berlin (Germany); Klose, F.; Felcher, G.P. [Argonne National Lab., IL (United States)

    1997-07-23

    The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co{sub 0.11} Fe{sub 0.89} supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 {angstrom}{sup -1}, whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths.

  3. Topical review: spins and mechanics in diamond

    Science.gov (United States)

    Lee, Donghun; Lee, Kenneth W.; Cady, Jeffrey V.; Ovartchaiyapong, Preeti; Bleszynski Jayich, Ania C.

    2017-03-01

    There has been rapidly growing interest in hybrid quantum devices involving a solid-state spin and a macroscopic mechanical oscillator. Such hybrid devices create exciting opportunities to mediate interactions between disparate quantum bits (qubits) and to explore the quantum regime of macroscopic mechanical objects. In particular, a system consisting of the nitrogen-vacancy defect center (NV center) in diamond coupled to a high-quality-factor mechanical oscillator is an appealing candidate for such a hybrid quantum device, as it utilizes the highly coherent and versatile spin properties of the defect center. In this paper, we will review recent experimental progress on diamond-based hybrid quantum devices in which the spin and orbital dynamics of single defects are driven by the motion of a mechanical oscillator. In addition, we discuss prospective applications for this device, including long-range, phonon-mediated spin-spin interactions, and phonon cooling in the quantum regime. We conclude the review by evaluating the experimental limitations of current devices and identifying alternative device architectures that may reach the strong coupling regime.

  4. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors

    International Nuclear Information System (INIS)

    Jun-Qing, Zhao; Shi-Zhu, Qiao; Zhen-Feng, Jia; Ning-Yu, Zhang; Yan-Ju, Ji; Yan-Tao, Pang; Ying, Chen; Gang, Fu

    2008-01-01

    We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices

  5. Hybrid spin-nanomechanics with single spins in diamond mechanical oscillators

    OpenAIRE

    Barfuss, Arne

    2017-01-01

    Hybrid spin-oscillator systems, formed by single spins coupled to mechanical oscillators, have attracted ever-increasing attention over the past few years, triggered largely by the prospect of employing such devices as high-performance nanoscale sensors or transducers in multi-qubit networks. Provided the spin-oscillator coupling is strong and robust, such systems can even serve as test-beds for studying macroscopic objects in the quantum regime. In this thesis we present a novel hybrid sp...

  6. Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

    Science.gov (United States)

    Hung, Yu-Ming

    This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

  7. Fluid flow in drying drops

    NARCIS (Netherlands)

    Gelderblom, Hanneke

    2013-01-01

    When a suspension drop evaporates, it leaves behind a drying stain. Examples of these drying stains encountered in daily life are coffee or tea stains on a table top, mineral rings on glassware that comes out of the dishwasher, or the salt deposits on the streets in winter. Drying stains are also

  8. Pressure drop in contraction flow

    DEFF Research Database (Denmark)

    Rasmussen, Henrik Koblitz

    This note is a supplement to Dynamic of Polymeric Liquids (DPL) page 178. DPL gives an equation for the pressure drop in a tapered (and circular) contraction, valid only at low angles. Here the general definition of contraction flow (the Bagley correction) and a more general method to find...

  9. Circuit Simulation of All-Spin Logic

    KAUST Repository

    Alawein, Meshal

    2016-05-01

    With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall

  10. Spinning superfluid 4He nanodroplets

    Science.gov (United States)

    Ancilotto, Francesco; Barranco, Manuel; Pi, Martí

    2018-05-01

    We have studied spinning superfluid 4He nanodroplets at zero temperature using density functional theory. Due to the irrotational character of the superfluid flow, the shapes of the spinning nanodroplets are very different from those of a viscous normal fluid drop in steady rotation. We show that when vortices are nucleated inside the superfluid droplets, their morphology, which evolves from axisymmetric oblate to triaxial prolate to two-lobed shapes, is in good agreement with experiments. The presence of vortex arrays confers to the superfluid droplets the rigid-body behavior of a normal fluid in steady rotation, and this is the ultimate reason for the surprising good agreement between recent experiments and the classical models used for their description.

  11. High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

    2016-04-21

    Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

  12. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    Science.gov (United States)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  13. Spin crossover and high spin filtering behavior in Co-Pyridine and Co-Pyrimidine molecules

    Science.gov (United States)

    Wen, Zhongqian; Zhou, Liping; Cheng, Jue-Fei; Li, Shu-Jin; You, Wen-Long; Wang, Xuefeng

    2018-03-01

    We present a theoretical study on a series of cobalt complexes, which are constructed with cobalt atoms and pyridine/pyrimidine rings, using density functional theory. We investigate the structural and electric transport properties of spin crossover (SCO) Co complex with two spin states, namely low-spin configuration [LS] and high-spin configuration [HS]. Energy analyses of the two spin states imply that the SCO Co-Pyridine2 and Co-Pyrimidine2 complexes may display a spin transition process accompanied by a geometric modification driven by external stimuli. A nearly perfect spin filtering effect is observed in the Co-Pyrimidine2 complex with [HS] state. In addition, we also discover the contact-dependent transmission properties of Co-Pyridine2. These findings indicate that SCO Co complexes are promising materials for molecular spintronic devices.

  14. Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

    Science.gov (United States)

    Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

    Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

  15. Spin Coherence in Semiconductor Nanostructures

    National Research Council Canada - National Science Library

    Flatte, Michael E

    2006-01-01

    ... dots, tuning of spin coherence times for electron spin, tuning of dipolar magnetic fields for nuclear spin, spontaneous spin polarization generation and new designs for spin-based teleportation and spin transistors...

  16. Active structuring of colloidal armour on liquid drops

    Science.gov (United States)

    Dommersnes, Paul; Rozynek, Zbigniew; Mikkelsen, Alexander; Castberg, Rene; Kjerstad, Knut; Hersvik, Kjetil; Otto Fossum, Jon

    2013-06-01

    Adsorption and assembly of colloidal particles at the surface of liquid droplets are at the base of particle-stabilized emulsions and templating. Here we report that electrohydrodynamic and electro-rheological effects in leaky-dielectric liquid drops can be used to structure and dynamically control colloidal particle assemblies at drop surfaces, including electric-field-assisted convective assembly of jammed colloidal ‘ribbons’, electro-rheological colloidal chains confined to a two-dimensional surface and spinning colloidal domains on that surface. In addition, we demonstrate the size control of ‘pupil’-like openings in colloidal shells. We anticipate that electric field manipulation of colloids in leaky dielectrics can lead to new routes of colloidosome assembly and design for ‘smart armoured’ droplets.

  17. Coefficient of restitution of sports balls: A normal drop test

    International Nuclear Information System (INIS)

    Haron, Adli; Ismail, K A

    2012-01-01

    Dynamic behaviour of bodies during impact is investigated through impact experiment, the simplest being a normal drop test. Normally, a drop test impact experiment involves measurement of kinematic data; this includes measurement of incident and rebound velocity in order to calculate a coefficient of restitution (COR). A high speed video camera is employed for measuring the kinematic data where speed is calculated from displacement of the bodies. Alternatively, sensors can be employed to measure speeds, especially for a normal impact where there is no spin of the bodies. This paper compares experimental coefficients of restitution (COR) for various sports balls, namely golf, table tennis, hockey and cricket. The energy loss in term of measured COR and effects of target plate are discussed in relation to the material and construction of these sports balls.

  18. Vanishing current hysteresis under competing nuclear spin pumping processes in a quadruplet spin-blockaded double quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Amaha, S., E-mail: s-amaha@riken.jp [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Hatano, T. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Department of Physics, Tohoku University, Sendai-shi, Miyagi 980-8578 (Japan); Tarucha, S. [Quantum Spin Information Project, Japan Science and Technology Agency, ICORP, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan); Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, RIKEN, 3-1 Wako-shi, Saitama 351-0198 (Japan); Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Gupta, J. A.; Austing, D. G. [National Research Council of Canada, M50, Montreal Road, Ottawa, Ontario K1A 0R6 (Canada)

    2015-04-27

    We investigate nuclear spin pumping with five-electron quadruplet spin states in a spin-blockaded weakly coupled vertical double quantum dot device. Two types of hysteretic steps in the leakage current are observed on sweeping the magnetic field and are associated with bidirectional polarization of nuclear spin. Properties of the steps are understood in terms of bias-voltage-dependent conditions for the mixing of quadruplet and doublet spin states by the hyperfine interaction. The hysteretic steps vanish when up- and down-nuclear spin pumping processes are in close competition.

  19. A method to determine the dampening system of control rod drop mechanism for PWR reactors

    International Nuclear Information System (INIS)

    Trindade, C.E.; Mattos, J.R.L. de; Perrotta, J.A.

    1988-08-01

    A method to determine the Control Assembly damping drop system (dashpot/guide tube) was developed. It's presented a theoretical model, an experimental device and the procedures to determine this system, which is used in PWR reactors. (author) [pt

  20. Spin-orbit interaction in multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Ya-Fei, E-mail: haoyafei@zjnu.cn [Physics Department, Zhejiang Normal University, Zhejiang 321004 (China)

    2015-01-07

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices.

  1. Spin-orbit interaction in multiple quantum wells

    International Nuclear Information System (INIS)

    Hao, Ya-Fei

    2015-01-01

    In this paper, we investigate how the structure of multiple quantum wells affects spin-orbit interactions. To increase the interface-related Rashba spin splitting and the strength of the interface-related Rashba spin-orbit interaction, we designed three kinds of multiple quantum wells. We demonstrate that the structure of the multiple quantum wells strongly affected the interface-related Rashba spin-orbit interaction, increasing the interface-related Rashba spin splitting to up to 26% larger in multiple quantum wells than in a stepped quantum well. We also show that the cubic Dresselhaus spin-orbit interaction similarly influenced the spin relaxation time of multiple quantum wells and that of a stepped quantum well. The increase in the interface-related Rashba spin splitting originates from the relationship between interface-related Rashba spin splitting and electron probability density. Our results suggest that multiple quantum wells can be good candidates for spintronic devices

  2. Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

    Science.gov (United States)

    Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

    2015-03-01

    We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

  3. Role of Structural Asymmetry in Controlling Drop Spacing in Microfluidic Ladder Networks

    Science.gov (United States)

    Wang, William; Maddala, Jeevan; Vanapalli, Siva; Rengasamy, Raghunathan

    2012-02-01

    Manipulation of drop spacing is crucial to many processes in microfluidic devices including drop coalescence, detection and storage. Microfluidic ladder networks ---where two droplet-carrying parallel channels are connected by narrow bypass channels through which the motion of drops is forbidden---have been proposed as a means to control relative separation between pairs of drops. Prior studies in microfluidic ladder networks with vertical bypasses, which possess fore-aft structural symmetry, have revealed that pairs of drops can only undergo reduction in drop spacing at the ladder exit. We investigate the dynamics of drops in microfluidic ladder networks with both vertical and slanted bypasses. Our analytical results indicate that unlike symmetric ladder networks, structural asymmetry introduced by a single slanted bypass can be used to modulate the relative spacing between drops, enabling them to contract, synchronize, expand or even flip at the ladder exit. Our experiments confirm all the behaviors predicted by theory. Numerical analysis further shows that ladders containing several identical bypasses can only linearly transform the input drop spacing. Finally, we find that ladders with specific combinations of vertical and slanted bypasses can generate non-linear transformation of input drop spacing, despite the absence of drop decision-making events at the bypass junctions.

  4. Emulsion Design. Analysis of Drop Deformations in Mixed Flows

    DEFF Research Database (Denmark)

    Egholm, Runi Ditlev

    2008-01-01

    . Furthermore wall effects are also investigated by varying the size of the computational domain which consists of a box with variable mesh size. In the center of the domain, where the drop resides, the mesh consists of a fine region whereas closer to the walls the elements gradually increase in size. Tests...... by the drop in the rotor-stator device is emulated in the computational box used for carrying out drop shape simulations. Comparison of simulated and experimentally obtained deformations show that in general the agreement is acceptable on a qualitative level. However, the simulations predict deformations...... there is a relaxation in the flow field. Furthermore we observe that for small viscosity ratios (A ~ 0.1) tip streaming is predominant while for larger viscosity ratios either binary or capillary break-up is predominant....

  5. Green chemistry and nanofabrication in a levitated Leidenfrost drop

    Science.gov (United States)

    Abdelaziz, Ramzy; Disci-Zayed, Duygu; Hedayati, Mehdi Keshavarz; Pöhls, Jan-Hendrik; Zillohu, Ahnaf Usman; Erkartal, Burak; Chakravadhanula, Venkata Sai Kiran; Duppel, Viola; Kienle, Lorenz; Elbahri, Mady

    2013-10-01

    Green nanotechnology focuses on the development of new and sustainable methods of creating nanoparticles, their localized assembly and integration into useful systems and devices in a cost-effective, simple and eco-friendly manner. Here we present our experimental findings on the use of the Leidenfrost drop as an overheated and charged green chemical reactor. Employing a droplet of aqueous solution on hot substrates, this method is capable of fabricating nanoparticles, creating nanoscale coatings on complex objects and designing porous metal in suspension and foam form, all in a levitated Leidenfrost drop. As examples of the potential applications of the Leidenfrost drop, fabrication of nanoporous black gold as a plasmonic wideband superabsorber, and synthesis of superhydrophilic and thermal resistive metal-polymer hybrid foams are demonstrated. We believe that the presented nanofabrication method may be a promising strategy towards the sustainable production of functional nanomaterials.

  6. Superheated drop, open-quotes Bubbleclose quotes, dosimeters

    International Nuclear Information System (INIS)

    Harper, M.J.; Lindler, K.W.; Nelson, M.E.; Johnson, T.L.; Jones, C.R.; Rabovsky, J.L.; Rao, N.; Kerschner, H.F.; Reil, G.K.; Schwartz, R.B.

    1991-01-01

    Superheated Drop Dosimeters (SDD) offer a sensitive, immediate measure of the neutron dose equivalent, but their dynamic range is limited and their response varies with temperature, pressure, and vibration. They contain thousands of superheated liquid drops in a stabilizing matrix. High linear energy transfer (LET) radiation triggers vaporization of the drops into visible bubbles. If the matrix is a liquid, the bubbles slowly rise, and the number present indicates the dose rate. Dose may be measured by displacement of the matrix, or by counting the sounds of vaporization. If the matrix is a gel, the bubbles are fixed, and their number is proportional to the dose equivalent. Our research has focused on modeling and elimination of the environmental response, extension of the dynamic range, and tests and evaluations of prototype devices

  7. Gate-Driven Pure Spin Current in Graphene

    Science.gov (United States)

    Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

    2017-09-01

    The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

  8. From nuclei to liquid drops

    Energy Technology Data Exchange (ETDEWEB)

    Menchaca-Rocha, A.; Huidobro, F.; Michaelian, K.; Perez, A.; Rodriguez, V. [Universidad Nacional Autonoma de Mexico, Mexico City (Mexico). Inst. de Fisica; Carjan, N. [Bordeaux-1 Univ., 33 - Gradignan (France). Centre d`Etudes Nucleaires

    1995-12-31

    Collisions of symmetric mercury-drop pairs have been studied experimentally as a function of impact parameter, in a relative-velocity range going from a coalescence-dominated region to interactions yielding several residues. The experiments are compared with predictions of a dynamical model used in nuclear physics. The time evolution of the shapes is well reproduced by the simulation. (authors). 8 refs., 3 figs.

  9. The dynamics of Leidenfrost drops

    OpenAIRE

    van Limbeek, Michiel Antonius Jacobus

    2017-01-01

    Temperature control is omnipresent in today’s life: from keeping your fridge cold, maintaining a room at a pleasant temperature or preventing your computer from overheating. Efficient ways of heat transfer are often based on phase change, making use of the high latent heat of evaporation. In the context of spray cooling, liquid drops are impacting a hot plate to ensure a rapid cooling. At some temperature however, no contact occurs between the liquid and the plate, and the heat transfer rate ...

  10. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  11. Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

    NARCIS (Netherlands)

    Dejene, F. K.; Flipse, J.; van Wees, B. J.

    2014-01-01

    We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni80Fe20/Cu/Ni80Fe20 nanopillar spin valve device subjected to either an electrical or a

  12. Spin glasses

    International Nuclear Information System (INIS)

    Mookerjee, Abhijit

    1976-01-01

    ''Spin glasses'', are entire class of magnetic alloys of moderate dilution, in which the magnetic atoms are far enough apart to be unlike the pure metal, but close enough so that the indirect exchange energy between them (mediated by the s-d interaction between local moments and conduction electrons) dominates all other energies. Characteristic critical phenomena displayed such as freezing of spin orientation at 'Tsub(c)' and spreading of magnetic ordering, are pointed out. Anomalous behaviour, associated with these critical phenomena, as reflected in : (i) Moessbauer spectroscopy giving hyperfine splitting at Tsub(c), (ii) maxima in susceptibility and remanent magnetism, (iii) thermopower maxima and change in slope, (iv) Characteristic cusp in susceptibility and its removal by very small magnetic fields, and (v) conductivity-resistivity measurements, are discussed. Theoretical developments aimed at explaining these phenomena, in particular, the ideas from percolation and localisation theories, and the approach based on the gellations of polymers, are discussed. Finally, a new approach based on renormalisation group in disordered systems is also briefly mentioned. (K.B.)

  13. Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

    KAUST Repository

    Li, Lailai

    2017-10-04

    Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

  14. Heat and spin interconversion

    International Nuclear Information System (INIS)

    Ohnuma, Yuichi; Matsuo, Mamoru; Maekawa, Sadamichi; Saitoh, Eeiji

    2017-01-01

    Spin Seebeck and spin Peltier effects, which are mutual conversion phenomena of heat and spin, are discussed on the basis of the microscopic theory. First, the spin Seebeck effect, which is the spin-current generation due to heat current, is discussed. The recent progress in research on the spin Seebeck effect are introduced. We explain the origin of the observed sign changes of the spin Seebeck effect in compensated ferromagnets. Next, the spin Peltier effect, which is the heat-current generation due to spin current, is discussed. Finally, we show that the spin Seebeck and spin Peltier effects are summarized by Onsager's reciprocal relation and derive Kelvin's relation for the spin and heat transports. (author)

  15. Entangled spins and ghost-spins

    Directory of Open Access Journals (Sweden)

    Dileep P. Jatkar

    2017-09-01

    Full Text Available We study patterns of quantum entanglement in systems of spins and ghost-spins regarding them as simple quantum mechanical toy models for theories containing negative norm states. We define a single ghost-spin as in [20] as a 2-state spin variable with an indefinite inner product in the state space. We find that whenever the spin sector is disentangled from the ghost-spin sector (both of which could be entangled within themselves, the reduced density matrix obtained by tracing over all the ghost-spins gives rise to positive entanglement entropy for positive norm states, while negative norm states have an entanglement entropy with a negative real part and a constant imaginary part. However when the spins are entangled with the ghost-spins, there are new entanglement patterns in general. For systems where the number of ghost-spins is even, it is possible to find subsectors of the Hilbert space where positive norm states always lead to positive entanglement entropy after tracing over the ghost-spins. With an odd number of ghost-spins however, we find that there always exist positive norm states with negative real part for entanglement entropy after tracing over the ghost-spins.

  16. Scaling during capillary thinning of particle-laden drops

    Science.gov (United States)

    Thete, Sumeet; Wagoner, Brayden; Basaran, Osman

    2017-11-01

    A fundamental understanding of drop formation is crucial in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, the about-to-form drop is connected to the fluid hanging from the nozzle via a thinning filament. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids using theory, simulations, and experiments. In some of the applications however, the forming drop and hence the thinning filament may contain solid particles. The thinning dynamics of such particle-laden filaments differs radically from that of particle-free filaments. Moreover, our understanding of filament thinning in the former case is poor compared to that in the latter case despite the growing interest in pinch-off of particle-laden filaments. In this work, we go beyond similar studies and experimentally explore the impact of solid particles on filament thinning by measuring both the radial and axial scalings in the neck region. The results are summarized in terms of a phase diagram of capillary thinning of particle-laden filaments.

  17. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

    2014-01-01

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  18. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  19. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  20. Spin transport in nanowires

    OpenAIRE

    Pramanik, S.; bandyopadhyay, S.; Cahay, M.

    2003-01-01

    We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry (Dresselhaus spin orbit coupling) and structural inve...

  1. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-10-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

  2. Effect of the Heat Flux Density on the Evaporation Rate of a Distilled Water Drop

    Directory of Open Access Journals (Sweden)

    Ponomarev Konstantin

    2016-01-01

    Full Text Available This paper presents the experimental dependence of the evaporation rate of a nondeaerated distilled water drop from the heat flux density on the surfaces of non-ferrous metals (copper and brass. A drop was placed on a heated substrate by electronic dosing device. To obtain drop profile we use a shadow optical system; drop symmetry was controlled by a high-speed video camera. It was found that the evaporation rate of a drop on a copper substrate is greater than on a brass. The evaporation rate increases intensively with raising volume of a drop. Calculated values of the heat flux density and the corresponding evaporation rates are presented in this work. The evaporation rate is found to increase intensively on the brass substrate with raising the heat flux density.

  3. The effect of dropping impact on bruising pomegranate fruit

    Directory of Open Access Journals (Sweden)

    M Mohammad Shafie

    2016-04-01

    on upper part of the piezoelectric force sensor was the dropping impact surface of the device. After dropping impact, the sample was caught by hand to prevent a second impact due to sample rebound. After impact, the samples were stored at room temperature for 48h, during which time bruise tissues and arils turned brown. The bruise area and bruise volume of each sample were calculated according to equations (1 and 2. Results and Discussion: Dropping impact acceleration versus time curves for the typical samples at ten drop heights are shown in figure 5. Drop height notably affected the impact acceleration. The peak force increased while contact times decreased with increasing drop height, which resulted in an increase of peak acceleration. Figure 6 shows the dropping impact velocity change during contact by theoretical calculation. The results showed that the velocities at the beginning of contact and the rebound velocities of the samples increased with increasing the drop height. Critical drop height of pomegranate in certain bruise area was determined and linear relationship between drop height and bruise volume for ‘Malas-e-Saveh’ pomegranates were obtained. It is clear that there were obvious differences between dropping bruise boundaries of pomegranates and the conventional damage boundary of products (as shown in figure 9. For the conventional damage boundary, the vertical line, critical velocity (Vc, represents the velocity change below which no damage occurs, regardless of the peak pulse acceleration. The horizontal line, critical acceleration (AC, represents the acceleration at which the product will be damaged if velocity exceeds VC. At the same time, for a conventional product, there is only one damage boundary at one shock condition. However, for fruit, a change in drop height (velocity will lead to a change in bruise ratio. A series of bruise boundaries can be determined for different bruise ratios. Moreover, even if the velocity approaches zero, the

  4. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    G. A. Nemnes

    2012-01-01

    Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

  5. Half-metallic superconducting triplet spin multivalves

    Science.gov (United States)

    Alidoust, Mohammad; Halterman, Klaus

    2018-02-01

    We study spin switching effects in finite-size superconducting multivalve structures. We examine F1F2SF3 and F1F2SF3F4 hybrids where a singlet superconductor (S) layer is sandwiched among ferromagnet (F) layers with differing thicknesses and magnetization orientations. Our results reveal a considerable number of experimentally viable spin-valve configurations that lead to on-off switching of the superconducting state. For S widths on the order of the superconducting coherence length ξ0, noncollinear magnetization orientations in adjacent F layers with multiple spin axes leads to a rich variety of triplet spin-valve effects. Motivated by recent experiments, we focus on samples where the magnetizations in the F1 and F4 layers exist in a fully spin-polarized half-metallic phase, and calculate the superconducting transition temperature, spatially and energy resolved density of states, and the spin-singlet and spin-triplet superconducting correlations. Our findings demonstrate that superconductivity in these devices can be completely switched on or off over a wide range of magnetization misalignment angles due to the generation of equal-spin and opposite-spin triplet pairings.

  6. Vortex flow in acoustically levitated drops

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Z.L.; Xie, W.J. [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China); Wei, B., E-mail: bbwei@nwpu.edu.cn [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China)

    2011-08-29

    The internal flow of acoustically levitated water drops is investigated experimentally. This study reveals a kind of vortex flow which rotates in the meridional plane of the levitated drop. The magnitude of fluid velocity is nearly vanishing at the drop center, whereas it increases toward the free surface of a levitated drop until the maximum value of about 80 mm/s. A transition of streamline shapes from concentric circles to ellipses takes place at the distance of about 1.2 mm from the drop center. The fluid velocity distribution is plotted as a function of polar angle for seven characteristic streamlines. -- Highlights: → We experimentally observe the internal flow of acoustically levitated water drops. → We present a fascinating structure of vortex flow inside the levitated water drop. → This vortex flow rotates around the drop center in the meridional plane. → Velocity distribution information of this vortex flow is quantitatively analyzed.

  7. Vortex flow in acoustically levitated drops

    International Nuclear Information System (INIS)

    Yan, Z.L.; Xie, W.J.; Wei, B.

    2011-01-01

    The internal flow of acoustically levitated water drops is investigated experimentally. This study reveals a kind of vortex flow which rotates in the meridional plane of the levitated drop. The magnitude of fluid velocity is nearly vanishing at the drop center, whereas it increases toward the free surface of a levitated drop until the maximum value of about 80 mm/s. A transition of streamline shapes from concentric circles to ellipses takes place at the distance of about 1.2 mm from the drop center. The fluid velocity distribution is plotted as a function of polar angle for seven characteristic streamlines. -- Highlights: → We experimentally observe the internal flow of acoustically levitated water drops. → We present a fascinating structure of vortex flow inside the levitated water drop. → This vortex flow rotates around the drop center in the meridional plane. → Velocity distribution information of this vortex flow is quantitatively analyzed.

  8. Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

    Science.gov (United States)

    Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

    2017-10-11

    By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

  9. Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

    Science.gov (United States)

    2017-11-09

    Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene Report Term: 0-Other Email ...Principal: Y Name: Jay A Gupta Email : gupta.208@osu.edu Name: Roland K Kawakami Email : kawakami.15@osu.edu RPPR Final Report as of 13-Nov-2017...studies on films and devices. Optimization of the Cr tip will be the next important step to establish this technique. We are writing up these early

  10. Pulsar Kicks via Spin-1 Color Superconductivity

    International Nuclear Information System (INIS)

    Schmitt, Andreas; Shovkovy, Igor A.; Wang Qun

    2005-01-01

    We propose a new neutrino propulsion mechanism for neutron stars which can lead to strong velocity kicks, needed to explain the observed bimodal velocity distribution of pulsars. The spatial asymmetry in the neutrino emission is naturally provided by a stellar core containing spin-1 color-superconducting quark matter in the A phase. The neutrino propulsion mechanism switches on when the stellar core temperature drops below the transition temperature of this phase

  11. Drag and drop display & builder

    Energy Technology Data Exchange (ETDEWEB)

    Bolshakov, Timofei B.; Petrov, Andrey D.; /Fermilab

    2007-12-01

    The Drag and Drop (DnD) Display & Builder is a component-oriented system that allows users to create visual representations of data received from data acquisition systems. It is an upgrade of a Synoptic Display mechanism used at Fermilab since 2002. Components can be graphically arranged and logically interconnected in the web-startable Project Builder. Projects can be either lightweight AJAX- and SVG-based web pages, or they can be started as Java applications. The new version was initiated as a response to discussions between the LHC Controls Group and Fermilab.

  12. Electron spin resonance scanning tunneling microscope

    International Nuclear Information System (INIS)

    Guo Yang; Li Jianmei; Lu Xinghua

    2015-01-01

    It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)

  13. CANFLEX fuel bundle junction pressure drop

    International Nuclear Information System (INIS)

    Chung, H. J.; Chung, C. H.; Jun, J. S.; Hong, S. D.; Chang, S. K.; Kim, B. D.

    1996-11-01

    This report describes the junction pressure drop test results which are to used to determine the alignment angle between bundles to achieve the most probable fuel string pressure drop for randomly aligned bundles for use in the fuel string total pressure drop test. (author). 4 tabs., 17 figs

  14. CANFLEX fuel bundle junction pressure drop

    Energy Technology Data Exchange (ETDEWEB)

    Chung, H. J.; Chung, C. H.; Jun, J. S.; Hong, S. D.; Chang, S. K.; Kim, B. D.

    1996-11-01

    This report describes the junction pressure drop test results which are to used to determine the alignment angle between bundles to achieve the most probable fuel string pressure drop for randomly aligned bundles for use in the fuel string total pressure drop test. (author). 4 tabs., 17 figs.

  15. 49 CFR 178.603 - Drop test.

    Science.gov (United States)

    2010-10-01

    ... used for the hydrostatic pressure or stacking test. Exceptions for the number of steel and aluminum..., non-resilient, flat and horizontal surface. (e) Drop height. Drop heights, measured as the vertical... than flat drops, the center of gravity of the test packaging must be vertically over the point of...

  16. Dynamics of domain wall driven by spin-transfer torque

    International Nuclear Information System (INIS)

    Chureemart, P.; Evans, R. F. L.; Chantrell, R. W.

    2011-01-01

    Spin-torque switching of magnetic devices offers new technological possibilities for data storage and integrated circuits. We have investigated domain-wall motion in a ferromagnetic thin film driven by a spin-polarized current using an atomistic spin model with a modified Landau-Lifshitz-Gilbert equation including the effect of the spin-transfer torque. The presence of the spin-transfer torque is shown to create an out-of-plane domain wall, in contrast to the external-field-driven case where an in-plane wall is found. We have investigated the effect of the spin torque on domain-wall displacement, domain-wall velocity, and domain-wall width, as well as the equilibration time in the presence of the spin-transfer torque. We have shown that the minimum spin-current density, regarded as the critical value for domain-wall motion, decreases with increasing temperature.

  17. Field-induced negative differential spin lifetime in silicon.

    Science.gov (United States)

    Li, Jing; Qing, Lan; Dery, Hanan; Appelbaum, Ian

    2012-04-13

    We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.

  18. A switchable spin-wave signal splitter for magnonic networks

    Science.gov (United States)

    Heussner, F.; Serga, A. A.; Brächer, T.; Hillebrands, B.; Pirro, P.

    2017-09-01

    The influence of an inhomogeneous magnetization distribution on the propagation of caustic-like spin-wave beams in unpatterned magnetic films has been investigated by utilizing micromagnetic simulations. Our study reveals a locally controllable and reconfigurable tractability of the beam directions. This feature is used to design a device combining split and switch functionalities for spin-wave signals on the micrometer scale. A coherent transmission of spin-wave signals through the device is verified. This attests the applicability in magnonic networks where the information is encoded in the phase of the spin waves.

  19. Assisted Writing in Spin Transfer Torque Magnetic Tunnel Junctions

    Science.gov (United States)

    Ganguly, Samiran; Ahmed, Zeeshan; Datta, Supriyo; Marinero, Ernesto E.

    2015-03-01

    Spin transfer torque driven MRAM devices are now in an advanced state of development, and the importance of reducing the current requirement for writing information is well recognized. Different approaches to assist the writing process have been proposed such as spin orbit torque, spin Hall effect, voltage controlled magnetic anisotropy and thermal excitation. In this work,we report on our comparative study using the Spin-Circuit Approach regarding the total energy, the switching speed and energy-delay products for different assisted writing approaches in STT-MTJ devices using PMA magnets.

  20. Magnetic Nanostructures Spin Dynamics and Spin Transport

    CERN Document Server

    Farle, Michael

    2013-01-01

    Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

  1. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  2. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  3. Electrohydrodynamics of a viscous drop with inertia.

    Science.gov (United States)

    Nganguia, H; Young, Y-N; Layton, A T; Lai, M-C; Hu, W-F

    2016-05-01

    Most of the existing numerical and theoretical investigations on the electrohydrodynamics of a viscous drop have focused on the creeping Stokes flow regime, where nonlinear inertia effects are neglected. In this work we study the inertia effects on the electrodeformation of a viscous drop under a DC electric field using a novel second-order immersed interface method. The inertia effects are quantified by the Ohnesorge number Oh, and the electric field is characterized by an electric capillary number Ca_{E}. Below the critical Ca_{E}, small to moderate electric field strength gives rise to steady equilibrium drop shapes. We found that, at a fixed Ca_{E}, inertia effects induce larger deformation for an oblate drop than a prolate drop, consistent with previous results in the literature. Moreover, our simulations results indicate that inertia effects on the equilibrium drop deformation are dictated by the direction of normal electric stress on the drop interface: Larger drop deformation is found when the normal electric stress points outward, and smaller drop deformation is found otherwise. To our knowledge, such inertia effects on the equilibrium drop deformation has not been reported in the literature. Above the critical Ca_{E}, no steady equilibrium drop deformation can be found, and often the drop breaks up into a number of daughter droplets. In particular, our Navier-Stokes simulations show that, for the parameters we use, (1) daughter droplets are larger in the presence of inertia, (2) the drop deformation evolves more rapidly compared to creeping flow, and (3) complex distribution of electric stresses for drops with inertia effects. Our results suggest that normal electric pressure may be a useful tool in predicting drop pinch-off in oblate deformations.

  4. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  5. Graphene spin capacitor for magnetic field sensing

    OpenAIRE

    Semenov, Y. G.; Zavada, J. M.; Kim, K. W.

    2010-01-01

    An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution of spin polarized electrons injected into the capacitor can be used for an accurate determination at room temperature of external magnetic fields. Assuming a spin relaxation time of 100 ns, magnetic fields on the order of $\\sim 10$ mOe may be detected at r...

  6. Vibration-Induced Climbing of Drops

    Science.gov (United States)

    Brunet, P.; Eggers, J.; Deegan, R. D.

    2007-10-01

    We report an experimental study of liquid drops moving against gravity, when placed on a vertically vibrating inclined plate, which is partially wetted by the drop. The frequency of vibrations ranges from 30 to 200 Hz, and, above a threshold in vibration acceleration, drops experience an upward motion. We attribute this surprising motion to the deformations of the drop, as a consequence of an up or down symmetry breaking induced by the presence of the substrate. We relate the direction of motion to contact angle measurements. This phenomenon can be used to move a drop along an arbitrary path in a plane, without special surface treatments or localized forcing.

  7. Spin polarisation with electron Bessel beams

    Energy Technology Data Exchange (ETDEWEB)

    Schattschneider, P., E-mail: schattschneider@ifp.tuwien.ac.at [Institut für Festkörperphysik, Technische Universität Wien, A-1040 Wien (Austria); USTEM, Technische Universität Wien, A-1040 Wien (Austria); Grillo, V. [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy); Aubry, D. [Centrale Supelec, MSSMast CNRS 8579, F-92295 Châtenay-Malabry (France)

    2017-05-15

    The theoretical possibility to use an electron microscope as a spin polarizer is studied. It turns out that a Bessel beam passing a standard magnetic objective lens is intrinsically spin polarized when post-selected on-axis. In the limit of infinitely small detectors, the spin polarisation tends to 100 %. Increasing the detector size, the polarisation decreases rapidly, dropping below 10{sup −4} for standard settings of medium voltage microscopes. For extremely low voltages, the Figure of Merit increases by two orders of magnitude, approaching that of existing Mott detectors. Our findings may lead to new desings of spin filters, an attractive option in view of its inherent combination with the electron microscope, especially at low voltage. - Highlights: • TEM round magnetic lenses can act as spin polarizers when a Bessel beam is sent through. • This is found on theoretical grounds and demonstrated numerically for a few cases. • The effect is small, but can reach a Figure of Merit similar to existing Mott detectors. • This opens the possibility to construct nanometer-sized spin filters or detectors.

  8. Who is dropping your course?

    Science.gov (United States)

    Storrs, Alex; Ghent, C.; Labattaglia, R.

    2011-01-01

    We present an analysis of pre and post instruction instruments in a basic astronomy course. This analysis is built on the Light and Spectroscopy Concept Inventory (LSCI, Bardar et al. 2007). In addition to assessing our student's gain in knowledge of this fundamental topic, we have added some demographic questions. While the primary purpose is to compare the gain in knowledge during a semester of instruction to changes in instruction, we also look at the demographics of students who take the pretest but not the posttest. These students are usually excluded from this type of analysis. We look for trends in the demographic information among students who drop the course, and suggest ways to make the course more palatable. References: Bardar et al., 2007: "Development and Validation of the Light and Spectroscopy Concept Inventory", Astr. Ed. Rev. 5(2), 103-113

  9. Magnetically focused liquid drop radiator

    Science.gov (United States)

    Botts, Thomas E.; Powell, James R.; Lenard, Roger

    1986-01-01

    A magnetically focused liquid drop radiator for application in rejecting rgy from a spacecraft, characterized by a magnetizable liquid or slurry disposed in operative relationship within the liquid droplet generator and its fluid delivery system, in combination with magnetic means disposed in operative relationship around a liquid droplet collector of the LDR. The magnetic means are effective to focus streams of droplets directed from the generator toward the collector, thereby to assure that essentially all of the droplets are directed into the collector, even though some of the streams may be misdirected as they leave the generator. The magnetic focusing means is also effective to suppress splashing of liquid when the droplets impinge on the collector.

  10. A New Spin on Photoemission Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jozwiak, Chris [Univ. of California, Berkeley, CA (United States)

    2008-12-01

    The electronic spin degree of freedom is of general fundamental importance to all matter. Understanding its complex roles and behavior in the solid state, particularly in highly correlated and magnetic materials, has grown increasingly desirable as technology demands advanced devices and materials based on ever stricter comprehension and control of the electron spin. However, direct and efficient spin dependent probes of electronic structure are currently lacking. Angle Resolved Photoemission Spectroscopy (ARPES) has become one of the most successful experimental tools for elucidating solid state electronic structures, bolstered by-continual breakthroughs in efficient instrumentation. In contrast, spin-resolved photoemission spectroscopy has lagged behind due to a lack of similar instrumental advances. The power of photoemission spectroscopy and the pertinence of electronic spin in the current research climate combine to make breakthroughs in Spin and Angle Resolved Photoemission Spectroscopy (SARPES) a high priority . This thesis details the development of a unique instrument for efficient SARPES and represents a radical departure from conventional methods. A custom designed spin polarimeter based on low energy exchange scattering is developed, with projected efficiency gains of two orders of magnitude over current state-of-the-art polarimeters. For energy analysis, the popular hemispherical analyzer is eschewed for a custom Time-of-Flight (TOF) analyzer offering an additional order of magnitude gain in efficiency. The combined instrument signifies the breakthrough needed to perform the high resolution SARPES experiments necessary for untangling the complex spin-dependent electronic structures central to today's condensed matter physics.

  11. Spin-polarized spin excitation spectroscopy

    International Nuclear Information System (INIS)

    Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2010-01-01

    We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

  12. Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

    Science.gov (United States)

    Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

    2018-06-01

    We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

  13. Electronic readout of a single nuclear spin using a molecular spin transistor

    Science.gov (United States)

    Vincent, R.; Klyastskaya, S.; Ruben, M.; Wernsdorfer, W.; Balestro, F.

    2012-02-01

    Quantum control of individual spins in condensed matter devices is an emerging field with a wide range of applications ranging from nanospintronics to quantum computing [1,2]. The electron, with its spin and orbital degrees of freedom, is conventionally used as carrier of the quantum information in the devices proposed so far. However, electrons exhibit a strong coupling to the environment leading to reduced relaxation and coherence times. Indeed quantum coherence and stable entanglement of electron spins are extremely difficult to achieve. We propose a new approach using the nuclear spin of an individual metal atom embedded in a single-molecule magnet (SMM). In order to perform the readout of the nuclear spin, the quantum tunneling of the magnetization (QTM) of the magnetic moment of the SMM in a transitor-like set-up is electronically detected. Long spin lifetimes of an individual nuclear spin were observed and the relaxation characteristics were studied. The manipulation of the nuclear spin state of individual atoms embedded in magnetic molecules opens a completely new world, where quantum logic may be integrated.[4pt] [1] L. Bogani, W. Wernsdorfer, Nature Mat. 7, 179 (2008).[0pt] [2] M. Urdampilleta, S. Klyatskaya, J.P. Cleuziou, M. Ruben, W. Wernsdorfer, Nature Mat. 10, 502 (2011).

  14. Spin injection into Pt-polymers with large spin-orbit coupling

    Science.gov (United States)

    Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

    2014-03-01

    Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

  15. Direct observation of the spin-dependent Peltier effect.

    Science.gov (United States)

    Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J

    2012-02-05

    The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.

  16. Spherically Symmetric Solutions of the Einstein-Bach Equations and a Consistent Spin-2 Field Theory

    International Nuclear Information System (INIS)

    Janda, A.

    2006-01-01

    We briefly present a relationship between General Relativity coupled to certain spin-0 and spin-2 field theories and higher derivatives metric theories of gravity. In a special case, described by the Einstein-Bach equations, the spin-0 field drops out from the theory and we obtain a consistent spin-two field theory interacting gravitationally, which overcomes a well known inconsistency of the theory for a linear spin-two field coupled to the Einstein's gravity. Then we discuss basic properties of static spherically symmetric solutions of the Einstein-Bach equations. (author)

  17. Frequency multiplexing for readout of spin qubits

    Energy Technology Data Exchange (ETDEWEB)

    Hornibrook, J. M.; Colless, J. I.; Mahoney, A. C.; Croot, X. G.; Blanvillain, S.; Reilly, D. J., E-mail: david.reilly@sydney.edu.au [ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Lu, H.; Gossard, A. C. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-03-10

    We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realise dispersive gate-sensing in combination with charge detection based on two radio frequency quantum point contacts. We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels are discussed.

  18. Innovative spin precessor for intermediate energy protons

    International Nuclear Information System (INIS)

    Hoffman, E.W.

    1979-01-01

    A spin precessor has been designed to provide arbitrary orientation of the polarization in the external proton beam at LAMPF. The device utilizes two superconducting solenoids, three conventional dipoles, and conversion of polarized H - to H + to provide an achromatic, undeflected beam with tunable spin orientation over a range of energies from 400 MeV to 800 MeV. A portion of this device is being installed to provide compatibility between two facilities which simultaneously use two branches of the external proton beam at LAMPF

  19. Drop behavior in acoustic standing waves; Teizaihachu ni okeru ekiteki no kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Kamimura, H. [National Aerospace Laboratory, Tokyo (Japan); Yamanaka, T. [Yokohama National University, Yokohama (Japan)

    1997-10-01

    When new materials, such as those for space shuttles, are developed, it is necessary to hold then in a non-contacting manner. Described herein is behavior of drops in a holding device which utilizes acoustic radiation pressure. When an object sufficiently small as compared with wavelength of a sound wave is placed in acoustic standing waves, it is subjected to acoustic radiation pressure. Chandrasekahr developed the theory on the stability of a rotating drop by equating the entire mechanical energy of a drop with its surface energy. This theory, based on the assumption of symmetric surface energy, is incapable of theoretically dealing with multi-lobed waves evolved by surface tension. In this study, multi-lobed waves excited by sound waves in a rotating drop are analytically found without assuming symmetry of drop surface energy. The multi-lobe waves are first found on the assumption that the acoustic radiation pressure around a drop is constant. Then, the effects of the deformed drop on the radiation pressure around the drop are considered. In addition, the equation for the relationship between the radiation pressure and a drop that becomes oblate due to the radiation pressure is obtained. The theoretically derived results by this equation are in good agreement with the observed results by the ground and flight tests. 17 refs., 18 figs.

  20. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  1. Perspectives of using spin waves for computing and signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Csaba, György, E-mail: gcsaba@gmail.com [Center for Nano Science and Technology, University of Notre Dame (United States); Faculty for Information Technology and Bionics, Pázmány Péter Catholic University (Hungary); Papp, Ádám [Center for Nano Science and Technology, University of Notre Dame (United States); Faculty for Information Technology and Bionics, Pázmány Péter Catholic University (Hungary); Porod, Wolfgang [Center for Nano Science and Technology, University of Notre Dame (United States)

    2017-05-03

    Highlights: • We give an overview of spin wave-based computing with emphasis on non-Boolean signal processors. • Spin waves can combine the best of electronics and photonics and do it in an on-chip and integrable way. • Copying successful approaches from microelectronics may not be the best way toward spin-wave based computing. • Practical devices can be constructed by minimizing the number of required magneto-electric interconnections. - Abstract: Almost all the world's information is processed and transmitted by either electric currents or photons. Now they may get a serious contender: spin-wave-based devices may just perform some information-processing tasks in a lot more efficient and practical way. In this article, we give an engineering perspective of the potential of spin-wave-based devices. After reviewing various flavors for spin-wave-based processing devices, we argue that the niche for spin-wave-based devices is low-power, compact and high-speed signal-processing devices, where most traditional electronics show poor performance.

  2. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  3. Spin nematics next to spin singlets

    Science.gov (United States)

    Yokoyama, Yuto; Hotta, Chisa

    2018-05-01

    We provide a route to generate nematic order in a spin-1/2 system. Unlike the well-known magnon-binding mechanism, our spin nematics requires neither the frustration effect nor spin polarization in a high field or in the vicinity of a ferromagnet, but instead appears next to the spin singlet phase. We start from a state consisting of a quantum spin-1/2 singlet dimer placed on each site of a triangular lattice, and show that interdimer ring exchange interactions efficiently dope the SU(2) triplets that itinerate and interact, easily driving a stable singlet state to either Bose-Einstein condensates or a triplet crystal, some hosting a spin nematic order. A variety of roles the ring exchange serves includes the generation of a bilinear-biquadratic interaction between nearby triplets, which is responsible for the emergent nematic order separated from the singlet phase by a first-order transition.

  4. Physics and application of persistent spin helix state in semiconductor heterostructures

    Science.gov (United States)

    Kohda, Makoto; Salis, Gian

    2017-07-01

    In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

  5. Flexible semi-transparent organic spin valve based on bathocuproine

    International Nuclear Information System (INIS)

    Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

  6. Spin incommensurability and two phase competition in cobaltites.

    Science.gov (United States)

    Phelan, D; Louca, Despina; Kamazawa, K; Lee, S-H; Ancona, S N; Rosenkranz, S; Motome, Y; Hundley, M F; Mitchell, J F; Moritomo, Y

    2006-12-08

    The perovskite LaCoO3 evolves from a nonmagnetic Mott insulator to a spin cluster ferromagnet (FM) with the substitution of Sr2+ for La3+ in La1-xSrxCoO3. The clusters increase in size and number with x and the charge percolation through the clusters leads to a metallic state. Using elastic neutron scattering on La1-xSrxCoO3 single crystals, we show that an incommensurate spin superstructure coexists with the FM spin clusters. The incommensurability increases continuously with x, with the intensity rising in the insulating phase and dropping in the metallic phase as it directly competes with the commensurate FM, itinerant clusters. The spin incommensurability arises from local order of Co3+-Co4+ clusters but no long-range static or dynamic spin stripes develop. The coexistence and competition of the two magnetic phases explain the residual resistivity at low temperatures in samples with metalliclike transport.

  7. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    Science.gov (United States)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  8. Sepsis from dropped clips at laparoscopic cholecystectomy

    International Nuclear Information System (INIS)

    Hussain, Sarwat

    2001-01-01

    We report seven patients in whom five dropped surgical clips and two gallstones were visualized in the peritoneal cavity, on radiological studies. In two, subphrenic abscesses and empyemas developed as a result of dropped clips into the peritoneal cavity during or following laparoscopic cholecystectomy. In one of these two, a clip was removed surgically from the site of an abscess. In two other patients dropped gallstones, and in three, dropped clips led to no complications. These were seen incidentally on studies done for other indications. Abdominal abscess secondary to dropped gallstones is a well-recognized complication of laparoscopic cholecystectomy (LC). We conclude that even though dropped surgical clips usually do not cause problems, they should be considered as a risk additional to other well-known causes of post-LC abdominal sepsis

  9. Hydrothermal waves in evaporating sessile drops

    OpenAIRE

    Brutin, D.; Rigollet, F.; Niliot, C. Le

    2009-01-01

    Drop evaporation is a simple phenomena but still unclear concerning the mechanisms of evaporation. A common agreement of the scientific community based on experimental and numerical work evidences that most of the evaporation occurs at the triple line. However, the rate of evaporation is still empirically predicted due to the lack of knowledge on the convection cells which develop inside the drop under evaporation. The evaporation of sessile drop is more complicated than it appears due to the...

  10. Spin-Mechatronics

    Science.gov (United States)

    Matsuo, Mamoru; Saitoh, Eiji; Maekawa, Sadamichi

    2017-01-01

    We investigate the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, the recent results on spin manipulation and spin-current generation by mechanical motion are examined. In accelerating systems, spin-dependent gauge fields emerge, which enable the conversion from mechanical angular momentum into spins. Such a spin-mechanical effect is predicted by quantum theory in a non-inertial frame. Experiments which confirm the effect, i.e., the resonance frequency shift in nuclear magnetic resonance, the stray field measurement of rotating metals, and electric voltage generation in liquid metals, are discussed.

  11. Nanopatterning spin-textures: A route to reconfigurable magnonics

    Directory of Open Access Journals (Sweden)

    E. Albisetti

    2017-05-01

    Full Text Available Magnonics is envisioned to enable highly efficient data transport and processing, by exploiting propagating perturbations in the spin-texture of magnetic materials. Despite the demonstrations of a plethora of proof-of-principle devices, the efficient excitation, transport and manipulation of spin-waves at the nanoscale is still an open challenge. Recently, we demonstrated that the spin-wave excitation and propagation can be controlled by nanopatterning reconfigurable spin-textures in a continuous exchange biased ferromagnetic film. Here, we show that by patterning 90° stripe-shaped magnetic domains, we spatially modulate the spin-wave excitation in a continuous film, and that by applying an external magnetic field we can reversibly “switch-off” the spin-wave excitation. This opens the way to the use of nanopatterned spin-textures, such as domains and domain walls, for exciting and manipulating magnons in reconfigurable nanocircuits.

  12. Spin transport through electric field modulated graphene periodic ferromagnetic barriers

    International Nuclear Information System (INIS)

    Sattari, F.; Faizabadi, E.

    2014-01-01

    Using the transfer matrix method, the spin transmission coefficient and the spin conductivity are studied theoretically through the monolayer and bilayer graphene periodic ferromagnetic barriers modulated by a homogeneous electric field. The spin conductivity of the systems has an oscillatory behavior with respect to the external electric field which depends on the spin state of electron. In addition, the oscillation amplitude of the spin conductivity and spin polarization increase by increasing the number of barriers, but for a monolayer system with number of barriers greater than thirty, also for a bilayer system with the number of barriers greater than four, the oscillation amplitude does not change significantly. Our probes show that for bilayer system unlike monolayer structure the highest value of spin polarization achieved can be 1 or (−1). So, for designing spintronic devices, bilayer graphene is more efficient

  13. Spin Injection, Manipulation, and Detection, in InAs Nanodevices

    Science.gov (United States)

    Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

    2008-03-01

    In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

  14. Parametric resonance in acoustically levitated water drops

    International Nuclear Information System (INIS)

    Shen, C.L.; Xie, W.J.; Wei, B.

    2010-01-01

    Liquid drops can be suspended in air with acoustic levitation method. When the sound pressure is periodically modulated, the levitated drop is usually forced into an axisymmetric oscillation. However, a transition from axisymmetric oscillation into sectorial oscillation occurs when the modulation frequency approaches some specific values. The frequency of the sectorial oscillation is almost exactly half of the modulation frequency. It is demonstrated that this transition is induced by the parametric resonance of levitated drop. The natural frequency of sectorial oscillation is found to decrease with the increase of drop distortion extent.

  15. Parametric resonance in acoustically levitated water drops

    Energy Technology Data Exchange (ETDEWEB)

    Shen, C.L.; Xie, W.J. [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China); Wei, B., E-mail: bbwei@nwpu.edu.c [Department of Applied Physics, Northwestern Polytechnical University, Xi' an 710072 (China)

    2010-05-10

    Liquid drops can be suspended in air with acoustic levitation method. When the sound pressure is periodically modulated, the levitated drop is usually forced into an axisymmetric oscillation. However, a transition from axisymmetric oscillation into sectorial oscillation occurs when the modulation frequency approaches some specific values. The frequency of the sectorial oscillation is almost exactly half of the modulation frequency. It is demonstrated that this transition is induced by the parametric resonance of levitated drop. The natural frequency of sectorial oscillation is found to decrease with the increase of drop distortion extent.

  16. Nonlinear oscillations of inviscid free drops

    Science.gov (United States)

    Patzek, T. W.; Benner, R. E., Jr.; Basaran, O. A.; Scriven, L. E.

    1991-01-01

    The present analysis of free liquid drops' inviscid oscillations proceeds through solution of Bernoulli's equation to obtain the free surface shape and of Laplace's equation for the velocity potential field. Results thus obtained encompass drop-shape sequences, pressure distributions, particle paths, and the temporal evolution of kinetic and surface energies; accuracy is verified by the near-constant drop volume and total energy, as well as the diminutiveness of mass and momentum fluxes across drop surfaces. Further insight into the nature of oscillations is provided by Fourier power spectrum analyses of mode interactions and frequency shifts.

  17. Drop "impact" on an airfoil surface.

    Science.gov (United States)

    Wu, Zhenlong

    2018-05-17

    Drop impact on an airfoil surface takes place in drop-laden two-phase flow conditions such as rain and icing, which are encountered by wind turbines or airplanes. This phenomenon is characterized by complex nonlinear interactions that manifest rich flow physics and pose unique modeling challenges. In this article, the state of the art of the research about drop impact on airfoil surface in the natural drop-laden two-phase flow environment is presented. The potential flow physics, hazards, characteristic parameters, droplet trajectory calculation, drop impact dynamics and effects are discussed. The most key points in establishing the governing equations for a drop-laden flow lie in the modeling of raindrop splash and water film. The various factors affecting the drop impact dynamics and the effects of drop impact on airfoil aerodynamic performance are summarized. Finally, the principle challenges and future research directions in the field as well as some promising measures to deal with the adverse effects of drop-laden flows on airfoil performance are proposed. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Modeling the neutron spin-flip process in a time-of-flight spin-resonance energy filter

    CERN Document Server

    Parizzi, A A; Klose, F

    2002-01-01

    A computer program for modeling the neutron spin-flip process in a novel time-of-flight (TOF) spin-resonance energy filter has been developed. The software allows studying the applicability of the device in various areas of spallation neutron scattering instrumentation, for example as a dynamic TOF monochromator. The program uses a quantum-mechanical approach to calculate the local spin-dependent spectra and is essential for optimizing the magnetic field profiles along the resonator axis. (orig.)

  19. Soft drop jet mass measurement

    CERN Document Server

    Roloff, Jennifer Kathryn; The ATLAS collaboration

    2018-01-01

    Calculations of jet substructure observables that are accurate beyond leading-logarithm accuracy have recently become available. Such observables are significant not only for probing the collinear regime of QCD that is largely unexplored at a hadron collider, but also for improving the understanding of jet substructure properties that are used in many studies at the Large Hadron Collider. This poster documents a measurement of the first jet substructure quantity at a hadron collider to be calculated at next-to-next-to-leading-logarithm accuracy. The normalized, differential cross-section is measured as a function of log( ρ^2), where ρ is the ratio of the soft-drop mass to the ungroomed jet transverse momentum. This quantity is measured in dijet events from 32.9 ifb of sqrt(s) = 13 TeV proton-proton collisions recorded by the ATLAS detector. The data are unfolded to correct for detector effects and compared to precise QCD calculations and leading-logarithm particle-level Monte Carlo simulations.

  20. Pressure drop and He II flow through fine mesh screens

    Science.gov (United States)

    Maddocks, J. R.; van Sciver, S. W.

    1989-05-01

    Fluid acquisition systems for He II transfer devices will utilize gallery arms to ensure that the fluid encounters the pump inlet. In near term experiments such as Superfluid Helium on Orbit Transfer (SHOOT), the preferred configuration consists of several rectangular channels which have one side made from a Dutch weave stainless steel screen having 325 x 2300 wires per inch. The effective pore diameter for this screen is about 5 microns. The present paper reports on measurements of pressure drop across a screen when it is subjected to a flow of liquid helium. The experiment measures the time rate of change of the level in two different helium reservoirs connected by a screen-blocked channel. Results with normal helium are compared with predictions based on the Armour-Cannon (1968) equations. The He II data show considerable deviation from the classical result. A discussion of the He II pressure drop results in terms of two fluid hydrodynamics is included.

  1. Microelectromechanical systems integrating molecular spin crossover actuators

    Energy Technology Data Exchange (ETDEWEB)

    Manrique-Juarez, Maria D. [LCC, CNRS and Université de Toulouse, UPS, INP, F-31077 Toulouse (France); LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077 Toulouse (France); Rat, Sylvain; Salmon, Lionel; Molnár, Gábor; Bousseksou, Azzedine, E-mail: liviu.nicu@laas.fr, E-mail: azzedine.bousseksou@lcc-toulouse.fr [LCC, CNRS and Université de Toulouse, UPS, INP, F-31077 Toulouse (France); Mathieu, Fabrice; Saya, Daisuke; Séguy, Isabelle; Leïchlé, Thierry; Nicu, Liviu, E-mail: liviu.nicu@laas.fr, E-mail: azzedine.bousseksou@lcc-toulouse.fr [LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077 Toulouse (France)

    2016-08-08

    Silicon MEMS cantilevers coated with a 200 nm thin layer of the molecular spin crossover complex [Fe(H{sub 2}B(pz){sub 2}){sub 2}(phen)] (H{sub 2}B(pz){sub 2} = dihydrobis(pyrazolyl)borate and phen = 1,10-phenantroline) were actuated using an external magnetic field and their resonance frequency was tracked by means of integrated piezoresistive detection. The light-induced spin-state switching of the molecules from the ground low spin to the metastable high spin state at 10 K led to a well-reproducible shift of the cantilever's resonance frequency (Δf{sub r} = −0.52 Hz). Control experiments at different temperatures using coated as well as uncoated devices along with simple calculations support the assignment of this effect to the spin transition. This latter translates into changes in mechanical behavior of the cantilever due to the strong spin-state/lattice coupling. A guideline for the optimization of device parameters is proposed so as to efficiently harness molecular scale movements for large-scale mechanical work, thus paving the road for nanoelectromechanical systems (NEMS) actuators based on molecular materials.

  2. Electrical control of single hole spins in nanowire quantum dots.

    Science.gov (United States)

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  3. Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry

    Science.gov (United States)

    2016-01-01

    Conspectus Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to

  4. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  5. Homoepitaxial graphene tunnel barriers for spin transport

    Science.gov (United States)

    Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

    2016-05-01

    Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  6. Electrical detection of magnetization dynamics via spin rectification effects

    Energy Technology Data Exchange (ETDEWEB)

    Harder, Michael, E-mail: michael.harder@umanitoba.ca; Gui, Yongsheng, E-mail: ysgui@physics.umanitoba.ca; Hu, Can-Ming, E-mail: hu@physics.umanitoba.ca

    2016-11-23

    The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro and nanostructured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook format easy to be used for analysing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

  7. Drop Impact Dynamics with Sessile Drops and Geometries: Spreading, Jetting, and Fragmentation

    Science.gov (United States)

    Tilger, Christopher F.

    The tendency of surface tension to cause small parcels of fluid to form into drops allows convenient packaging, transport, dispersal of liquid phase matter. Liquid drop impacts with solids, liquids, and other drops have realized and additional future applications in biological, manufacturing, heat transfer, and combustion systems. Experiments were conducted to investigate the dynamics of multiple drop collisions, rather than the most-studied phenomenon of single drop impacts. Additional drop impacts were performed on rigid hemispheres representing sessile drops, angled substrates, and into the vertex of two tilted surfaces arranged into a vee shape. A qualitative inspection of drop-sessile drop impacts shows distinct post-impact shapes depending on the offset distance between the drops. At intermediate offset distances, distinct jets issue from the overlap region between the two drops projected areas. These jets are observed to reach their maximum extent at a critical offset distance ratio, epsilon epsilon ˜ 0.75-0.80, with substrate contact angle and W e having a lesser effect. Capillary waves that traverse the sessile drop after collision cause a lower aspect ratio liquid column to emanate from the sessile drop opposite the impact. In order to better understand the jetting phenomenon seen in the offset drop-sessile drop impacts, simpler solid geometries are investigated that elicit a similar behavior. Solid hemispheres do not show the singular jetting observed in the fluidic case, however, a simple vee formed by two intersection planar substrates do jet in a similar fashion to the fluidic case. A geometric model with partnered experiments is developed to describe the bisymmetric spread of an impacting drop on an angled substrate. This geometric model is used to guide a time of arrival based model for various features of the drop impact, which is used to predict jetting in various vee channel experiments.

  8. Spin in hadron physics

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The following topics were ealt with: Hadron physics with proton and deuteron probes, physics projects with Georgian participation, spin physics with antiprotons and leptons, spin filtering experiments, ISTC projects, technical issues for FAIR. (HSI)

  9. Dynamic nuclear spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Stuhrmann, H B [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

    1996-11-01

    Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

  10. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  11. Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

    International Nuclear Information System (INIS)

    Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.

    2016-01-01

    We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

  12. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  13. Many Drops Make a Lake

    Directory of Open Access Journals (Sweden)

    Chaitanya S. Mudgal

    2014-03-01

    greater knowledge, better skills and disseminate this knowledge through this journal to influence as many physicians and their patients as possible. They have taken the knowledge of their teachers, recognized their giants and are now poised to see further than ever before. My grandmother often used to quote to me a proverb from India, which when translated literally means “Many drops make a lake”. I cannot help but be amazed by the striking similarities between the words of Newton and this Indian saying. Therefore, while it may seem intuitive, I think it must be stated that it is vital for the betterment of all our patients that we recognize our own personal lakes to put our drops of knowledge into. More important is that we recognize that it is incumbent upon each and every one of us to contribute to our collective lakes of knowledge such as ABJS. And finally and perhaps most importantly we need to be utterly cognizant of never letting such lakes of knowledge run dry.... ever.

  14. A Beautiful Spin

    International Nuclear Information System (INIS)

    Ji Xiangdong

    2003-01-01

    Spin is a beautiful concept that plays an ever important role in modern physics. In this talk, I start with a discussion of the origin of spin, and then turn to three themes in which spin has been crucial in subatomic physics: a lab to explore physics beyond the standard model, a tool to measure physical observables that are hard to obtain otherwise, a probe to unravel nonperturbative QCD. I conclude with some remarks on a world without spin

  15. Spin transport in oxygen adsorbed graphene nanoribbon

    Science.gov (United States)

    Kumar, Vipin

    2018-04-01

    The spin transport properties of pristine graphene nanoribbons (GNRs) have been most widely studied using theoretical and experimental tools. The possibilities of oxidation of fabricated graphene based nano electronic devices may change the device characteristics, which motivates to further explore the properties of graphene oxide nanoribbons (GONRs). Therefore, we present a systematic computational study on the spin polarized transport in surface oxidized GNR in antiferromagnetic (AFM) spin configuration using density functional theory combined with non-equilibrium Green's function (NEGF) method. It is found that the conductance in oxidized GNRs is significantly suppressed in the valance band and the conduction band. A further reduction in the conductance profile is seen in presence of two oxygen atoms on the ribbon plane. This change in the conductance may be attributed to change in the surface topology of the ribbon basal plane due to presence of the oxygen adatoms, where the charge transfer take place between the ribbon basal plane and the oxygen atoms.

  16. Drop test facility available to private industry

    International Nuclear Information System (INIS)

    Shappert, L.B.; Box, W.D.

    1983-01-01

    In 1978, a virtually unyielding drop test impact pad was constructed at Oak Ridge National Laboratory's (ORNL's) Tower Shielding Facility (TSF) for the testing of heavy shipping containers designed for transporting radioactive materials. Because of the facility's unique capability for drop-testing large, massive shipping packages, it has been identified as a facility which can be made available for non-DOE users

  17. University Drop-Out: An Italian Experience

    Science.gov (United States)

    Belloc, Filippo; Maruotti, Antonello; Petrella, Lea

    2010-01-01

    University students' drop-out is a crucial issue for the universities' efficiency evaluation and funding. In this paper, we analyze the drop-out rate of the Economics and Business faculty of Sapienza University of Rome. We use administrative data on 9,725 undergraduates students enrolled in three-years bachelor programs from 2001 to 2007 and…

  18. Total Site Heat Integration Considering Pressure Drops

    Directory of Open Access Journals (Sweden)

    Kew Hong Chew

    2015-02-01

    Full Text Available Pressure drop is an important consideration in Total Site Heat Integration (TSHI. This is due to the typically large distances between the different plants and the flow across plant elevations and equipment, including heat exchangers. Failure to consider pressure drop during utility targeting and heat exchanger network (HEN synthesis may, at best, lead to optimistic energy targets, and at worst, an inoperable system if the pumps or compressors cannot overcome the actual pressure drop. Most studies have addressed the pressure drop factor in terms of pumping cost, forbidden matches or allowable pressure drop constraints in the optimisation of HEN. This study looks at the implication of pressure drop in the context of a Total Site. The graphical Pinch-based TSHI methodology is extended to consider the pressure drop factor during the minimum energy requirement (MER targeting stage. The improved methodology provides a more realistic estimation of the MER targets and valuable insights for the implementation of the TSHI design. In the case study, when pressure drop in the steam distribution networks is considered, the heating and cooling duties increase by 14.5% and 4.5%.

  19. Why Do Students Drop Advanced Mathematics?

    Science.gov (United States)

    Horn, Ilana

    2004-01-01

    Students, especially black, Latino and Native American youth and students of low socio-economic status drop out of advanced mathematics. Teachers must coordinate their expectations, their knowledge of students and their teaching practices in order to stop struggling students from dropping out of advanced math classes.

  20. Spin at Lausanne

    International Nuclear Information System (INIS)

    Anon.

    1980-01-01

    From 25 September to 1 October, some 150 spin enthusiasts gathered in Lausanne for the 1980 International Symposium on High Energy Physics with Polarized Beams and Polarized Targets. The programme was densely packed, covering physics interests with spin as well as the accelerator and target techniques which make spin physics possible

  1. Spinning Eggs and Ballerinas

    Science.gov (United States)

    Cross, Rod

    2013-01-01

    Measurements are presented on the rise of a spinning egg. It was found that the spin, the angular momentum and the kinetic energy all decrease as the egg rises, unlike the case of a ballerina who can increase her spin and kinetic energy by reducing her moment of inertia. The observed effects can be explained, in part, in terms of rolling friction…

  2. Wetting and evaporation of binary mixture drops.

    Science.gov (United States)

    Sefiane, Khellil; David, Samuel; Shanahan, Martin E R

    2008-09-11

    Experimental results on the wetting behavior of water, methanol, and binary mixture sessile drops on a smooth, polymer-coated substrate are reported. The wetting behavior of evaporating water/methanol drops was also studied in a water-saturated environment. Drop parameters (contact angle, shape, and volume) were monitored in time. The effects of the initial relative concentrations on subsequent evaporation and wetting dynamics were investigated. Physical mechanisms responsible for the various types of wetting behavior during different stages are proposed and discussed. Competition between evaporation and hydrodynamic flow are evoked. Using an environment saturated with water vapor allowed further exploration of the controlling mechanisms and underlying processes. Wetting stages attributed to differential evaporation of methanol were identified. Methanol, the more volatile component, evaporates predominantly in the initial stage. The data, however, suggest that a small proportion of methanol remained in the drop after the first stage of evaporation. This residual methanol within the drop seems to influence subsequent wetting behavior strongly.

  3. CPAS Preflight Drop Test Analysis Process

    Science.gov (United States)

    Englert, Megan E.; Bledsoe, Kristin J.; Romero, Leah M.

    2015-01-01

    Throughout the Capsule Parachute Assembly System (CPAS) drop test program, the CPAS Analysis Team has developed a simulation and analysis process to support drop test planning and execution. This process includes multiple phases focused on developing test simulations and communicating results to all groups involved in the drop test. CPAS Engineering Development Unit (EDU) series drop test planning begins with the development of a basic operational concept for each test. Trajectory simulation tools include the Flight Analysis and Simulation Tool (FAST) for single bodies, and the Automatic Dynamic Analysis of Mechanical Systems (ADAMS) simulation for the mated vehicle. Results are communicated to the team at the Test Configuration Review (TCR) and Test Readiness Review (TRR), as well as at Analysis Integrated Product Team (IPT) meetings in earlier and intermediate phases of the pre-test planning. The ability to plan and communicate efficiently with rapidly changing objectives and tight schedule constraints is a necessity for safe and successful drop tests.

  4. Pressure drop in ET-RR-1

    International Nuclear Information System (INIS)

    Khattab, M.; Mina, A.R.

    1990-01-01

    Measurements of pressure drop through a bundle comprising 16 rods and their lower arrangement grid as well as orifices similar to those of ET-RR-1 core have been done. Experiments are carried out under adiabatic turbulent flow conditions at about 35 degree C. Bundle Reynolds number range is 4 x 10 -2 x 10. Orifices of diameters 4.5, 3.25 or 2.5 cm. are mounted underneath the bundle. The bundle and lower grid pressure drop coefficients are 3.75 and 1.8 respectively. Orifices pressure drop coefficients are 2.65, 19.67 and 53.55 respectively. The ratio of bundle pressure drop to that of 4.5 cm. Orifice diameter is 1.415. The pressure drop coefficients are utilizer to calculate flow through bundles. The flow rate per bundle is 39.1, 20.4 or 13.1 m 3 /hr. Depending on orifice diameter

  5. How to control spin-Seebeck current in a metal-quantum dot-magnetic insulator junction

    Science.gov (United States)

    Fu, Hua-Hua; Gu, Lei; Wu, Ruqian

    The control of the spin-Seebeck current is still a challenging task for the development of spin caloritronic devices. Here, we construct a spin-Seebeck device by inserting a quantum dot (QD) between the metal lead and magnetic insulator. Using the slave-particle approach and noncrossing approximation, we find that the spin-Seebeck effect increases significantly when the energy level of the QD locates near the Fermi level of the metal lead due to the enhancement of spin flipping and occurrences of quantum resonance. Since this can be easily realized by applying a gate voltage in experiments, the spin-Seebeck device proposed here can also work as a thermovoltaic transistor. Moreover, the optimal correlation strength and the energy level position of the QD are discussed to maximize the spin-Seebeck current as required for applications in controllable spin caloritronic devices.

  6. Resonant Spin-Transfer-Torque Nano-Oscillators

    Science.gov (United States)

    Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2017-12-01

    Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

  7. Spin-dependent tunneling transport in a lateral magnetic diode

    International Nuclear Information System (INIS)

    Wang, Yu; Shi, Ying

    2012-01-01

    Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

  8. Pure spin current manipulation in antiferromagnetically exchange coupled heterostructures

    Science.gov (United States)

    Avilés-Félix, L.; Butera, A.; González-Chávez, D. E.; Sommer, R. L.; Gómez, J. E.

    2018-03-01

    We present a model to describe the spin currents generated by ferromagnet/spacer/ferromagnet exchange coupled trilayer systems and heavy metal layers with strong spin-orbit coupling. By exploiting the magnitude of the exchange coupling (oscillatory RKKY-like coupling) and the spin-flop transition in the magnetization process, it has been possible to produce spin currents polarized in arbitrary directions. The spin-flop transition of the trilayer system originates pure spin currents whose polarization vector depends on the exchange field and the magnetization equilibrium angles. We also discuss a protocol to control the polarization sign of the pure spin current injected into the metallic layer by changing the initial conditions of magnetization of the ferromagnetic layers previously to the spin pumping and inverse spin Hall effect experiments. The small differences in the ferromagnetic layers lead to a change in the magnetization vector rotation that permits the control of the sign of the induced voltage components due to the inverse spin Hall effect. Our results can lead to important advances in hybrid spintronic devices with new functionalities, particularly, the ability to control microscopic parameters such as the polarization direction and the sign of the pure spin current through the variation of macroscopic parameters, such as the external magnetic field or the thickness of the spacer in antiferromagnetic exchange coupled systems.

  9. Ordered alternating binary polymer nanodroplet array by sequential spin dewetting.

    Science.gov (United States)

    Bhandaru, Nandini; Das, Anuja; Salunke, Namrata; Mukherjee, Rabibrata

    2014-12-10

    We report a facile technique for fabricating an ordered array of nearly equal-sized mesoscale polymer droplets of two constituent polymers (polystyrene, PS and poly(methyl methacrylate), PMMA) arranged in an alternating manner on a topographically patterned substrate. The self-organized array of binary polymers is realized by sequential spin dewetting. First, a dilute solution of PMMA is spin-dewetted on a patterned substrate, resulting in an array of isolated PMMA droplets arranged along the substrate grooves due to self-organization during spin coating itself. The sample is then silanized with octadecyltrichlorosilane (OTS), and subsequently, a dilute solution of PS is spin-coated on to it, which also undergoes spin dewetting. The spin-dewetted PS drops having a size nearly equal to the pre-existing PMMA droplets position themselves between two adjacent PMMA drops under appropriate conditions, forming an alternating binary polymer droplet array. The alternating array formation takes place for a narrow range of solution concentration for both the polymers and depends on the geometry of the substrate. The size of the droplets depends on the extent of confinement, and droplets as small as 100 nm can be obtained by this method, on a suitable template. The findings open up the possibility of creating novel surfaces having ordered multimaterial domains with a potential multifunctional capability.

  10. Impact of Disorder on Spin Dependent Transport Phenomena

    KAUST Repository

    Saidaoui, Hamed

    2016-07-03

    The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

  11. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  12. Pressure and Temperature Sensors Using Two Spin Crossover Materials.

    Science.gov (United States)

    Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

    2016-02-02

    The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

  13. Pressure and Temperature Sensors Using Two Spin Crossover Materials

    Science.gov (United States)

    Jureschi, Catalin-Maricel; Linares, Jorge; Boulmaali, Ayoub; Dahoo, Pierre Richard; Rotaru, Aurelian; Garcia, Yann

    2016-01-01

    The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices. PMID:26848663

  14. Pressure and Temperature Sensors Using Two Spin Crossover Materials

    Directory of Open Access Journals (Sweden)

    Catalin-Maricel Jureschi

    2016-02-01

    Full Text Available The possibility of a new design concept for dual spin crossover based sensors for concomitant detection of both temperature and pressure is presented. It is conjectured from numerical results obtained by mean field approximation applied to a Ising-like model that using two different spin crossover compounds containing switching molecules with weak elastic interactions it is possible to simultaneously measure P and T. When the interaction parameters are optimized, the spin transition is gradual and for each spin crossover compounds, both temperature and pressure values being identified from their optical densities. This concept offers great perspectives for smart sensing devices.

  15. Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

    Directory of Open Access Journals (Sweden)

    Zein W. A.

    2008-01-01

    Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic / superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

  16. Spin Transport in Mesoscopic Superconducting-Ferromagnetic Hybrid Conductor

    Directory of Open Access Journals (Sweden)

    Zein W. A.

    2008-01-01

    Full Text Available The spin polarization and the corresponding tunneling magnetoresistance (TMR for a hybrid ferromagnetic/superconductor junction are calculated. The results show that these parameters are strongly depends on the exchange field energy and the bias voltage. The dependence of the polarization on the angle of precession is due to the spin flip through tunneling process. Our results could be interpreted as due to spin imbalance of carriers resulting in suppression of gap energy of the superconductor. The present investigation is valuable for manufacturing magnetic recording devices and nonvolatile memories which imply a very high spin coherent transport for such junction.

  17. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  18. Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

    Science.gov (United States)

    Ulloa, Camilo; Duine, R. A.

    2018-04-01

    Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

  19. Inverse spin Hall effect by spin injection

    Science.gov (United States)

    Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

    2007-09-01

    Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

  20. Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

    Science.gov (United States)

    Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

    2014-10-22

    An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

  1. Demonstration of a robust magnonic spin wave interferometer.

    Science.gov (United States)

    Kanazawa, Naoki; Goto, Taichi; Sekiguchi, Koji; Granovsky, Alexander B; Ross, Caroline A; Takagi, Hiroyuki; Nakamura, Yuichi; Inoue, Mitsuteru

    2016-07-22

    Magnonics is an emerging field dealing with ultralow power consumption logic circuits, in which the flow of spin waves, rather than electric charges, transmits and processes information. Waves, including spin waves, excel at encoding information via their phase using interference. This enables a number of inputs to be processed in one device, which offers the promise of multi-input multi-output logic gates. To realize such an integrated device, it is essential to demonstrate spin wave interferometers using spatially isotropic spin waves with high operational stability. However, spin wave reflection at the waveguide edge has previously limited the stability of interfering waves, precluding the use of isotropic spin waves, i.e., forward volume waves. Here, a spin wave absorber is demonstrated comprising a yttrium iron garnet waveguide partially covered by gold. This device is shown experimentally to be a robust spin wave interferometer using the forward volume mode, with a large ON/OFF isolation value of 13.7 dB even in magnetic fields over 30 Oe.

  2. Drop impact splashing and air entrapment

    KAUST Repository

    Thoraval, Marie-Jean

    2013-03-01

    Drop impact is a canonical problem in fluid mechanics, with numerous applications in industrial as well as natural phenomena. The extremely simple initial configuration of the experiment can produce a very large variety of fast and complex dynamics. Scientific progress was made in parallel with major improvements in imaging and computational technologies. Most recently, high-speed imaging video cameras have opened the exploration of new phenomena occurring at the micro-second scale, and parallel computing allowed realistic direct numerical simulations of drop impacts. We combine these tools to bring a new understanding of two fundamental aspects of drop impacts: splashing and air entrapment. The early dynamics of a drop impacting on a liquid pool at high velocity produces an ejecta sheet, emerging horizontally in the neck between the drop and the pool. We show how the interaction of this thin liquid sheet with the air, the drop or the pool, can produce micro-droplets and bubble rings. Then we detail how the breakup of the air film stretched between the drop and the pool for lower impact velocities can produce a myriad of micro-bubbles.

  3. Drop size measurements in Venturi scrubbers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez Alonso, D.; Azzopardi, B.J. [Nottingham Univ. (United Kingdom). Dept. of Chemical Engineering; Goncalves, J.A.S.; Coury, J.R. [Universidade Federal de Sao Carlos (Brazil). Departamento de Engenharia Quimica

    2001-07-01

    Venturi scrubbers are high efficiency gas cleaners in which suspended particles are removed from gas streams by drops formed by liquid atomisation, usually in the Venturi throat. The size of the drops formed are of fundamental importance to the performance of the equipment, both in terms of pressure drop and dust removal efficiency. In this study, drop sizes in a cylindrical laboratory-scale Venturi scrubber were measured using a laser diffraction technique. Gas velocity and liquid to gas ratios varied from 50 to 90 m/s and 0.5 to 2.0 1/m{sup 3}, respectively. Water was injected using two different arrangements: either as jets in the throat or as a film just upstream of the convergence. Drop size measurements were performed at three positions in the case of jet injection: two located along the throat, and the last one at the end of the diffuser. The present data shows that the Sauter mean diameter of the spray can be well correlated by the equation of Boll et al. (J. Air Pollut. Control Assoc. 24 (1974) 932). Drop size distributions are satisfactorily represented by a Rosin-Rammler function. This paper also provides a simple method for calculating the parameters of the Rosin-Rammler function. As a result of this work, drop sizes in Venturi scrubbers can be estimated with much higher accuracy. (Author)

  4. Modifying Char Dustcake Pressure Drop Using Particulate Additives

    Energy Technology Data Exchange (ETDEWEB)

    Landham, C.; Dahlin, R.S.; Martin, R.A.; Guan, X.

    2002-09-19

    Coal gasification produces residual particles of coal char, coal ash, and sorbent that are suspended in the fuel gas stream exiting the gasifier. In most cases, these particles (referred to, hereafter, simply as char) must be removed from the stream prior to sending the gas to a turbine, fuel cell, or other downstream device. Currently, the most common approach to cleaning the gas stream at high temperature and pressure is by filtering the particulate with a porous ceramic or metal filter. However, because these dusts frequently have small size distributions, irregular morphology, and high specific surface areas, they can have very high gas flow resistance resulting in hot-gas filter system operating problems. Typical of gasification chars, the hot-gas filter dustcakes produced at the Power Systems Development Facility (PSDF) during recent coal gasification tests have had very high flow resistance (Martin et al, 2002). The filter system has been able to successfully operate, but pressure drops have been high and filter cleaning must occur very frequently. In anticipation of this problem, a study was conducted to investigate ways of reducing dustcake pressure drop. This paper will discuss the efficacy of adding low-flow-resistance particulate matter to the high-flow-resistance char dustcake to reduce dustcake pressure drop. The study had two parts: a laboratory screening study and confirming field measurements at the PSDF.

  5. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  6. "Self-Shaping" of Multicomponent Drops.

    Science.gov (United States)

    Cholakova, Diana; Valkova, Zhulieta; Tcholakova, Slavka; Denkov, Nikolai; Smoukov, Stoyan K

    2017-06-13

    In our recent study we showed that single-component emulsion drops, stabilized by proper surfactants, can spontaneously break symmetry and transform into various polygonal shapes during cooling [ Denkov Nature 2015 , 528 , 392 - 395 ]. This process involves the formation of a plastic rotator phase of self-assembled oil molecules beneath the drop surface. The plastic phase spontaneously forms a frame of plastic rods at the oil drop perimeter which supports the polygonal shapes. However, most of the common substances used in industry appear as mixtures of molecules rather than pure substances. Here we present a systematic study of the ability of multicomponent emulsion drops to deform upon cooling. The observed trends can be summarized as follows: (1) The general drop-shape evolution for multicomponent drops during cooling is the same as with single-component drops; however, some additional shapes are observed. (2) Preservation of the particle shape upon freezing is possible for alkane mixtures with chain length difference Δn ≤ 4; for greater Δn, phase separation within the droplet is observed. (3) Multicomponent particles prepared from alkanes with Δn ≤ 4 plastify upon cooling due to the formation of a bulk rotator phase within the particles. (4) If a compound, which cannot induce self-shaping when pure, is mixed with a certain amount of a compound which induces self-shaping, then drops prepared from this mixture can also self-shape upon cooling. (5) Self-emulsification phenomena are also observed for multicomponent drops. In addition to the three recently reported mechanisms of self-emulsification [ Tcholakova Nat. Commun. 2017 , ( 8 ), 15012 ], a new (fourth) mechanism is observed upon freezing for alkane mixtures with Δn > 4. It involves disintegration of the particles due to a phase separation of alkanes upon freezing.

  7. Bulk electron spin polarization generated by the spin Hall current

    OpenAIRE

    Korenev, V. L.

    2005-01-01

    It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

  8. Bulk electron spin polarization generated by the spin Hall current

    Science.gov (United States)

    Korenev, V. L.

    2006-07-01

    It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

  9. Current-induced magnetization changes in a spin valve due to incoherent emission of non-equilibrium magnons

    OpenAIRE

    Kozub, V. I.; Caro, J.

    2004-01-01

    We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission by electrons. Our approach is based on the rate equation for the magnon occupation, using Fermi's golden rule for magnon emission and absorption and the non-equilibrium electron distribution for a biased spin valve. The magnon emission reduces the magnetizat...

  10. Storing quantum information in spins and high-sensitivity ESR.

    Science.gov (United States)

    Morton, John J L; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

  11. Storing quantum information in spins and high-sensitivity ESR

    Science.gov (United States)

    Morton, John J. L.; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

  12. Information processing in patterned magnetic nanostructures with edge spin waves.

    Science.gov (United States)

    Lara, Antonio; Robledo Moreno, Javier; Guslienko, Konstantin Y; Aliev, Farkhad G

    2017-07-17

    Low dissipation data processing with spins is one of the promising directions for future information and communication technologies. Despite a significant progress, the available magnonic devices are not broadband yet and have restricted capabilities to redirect spin waves. Here we propose a breakthrough approach to spin wave manipulation in patterned magnetic nanostructures with unmatched characteristics, which exploits a spin wave analogue to edge waves propagating along a water-wall boundary. Using theory, micromagnetic simulations and experiment we investigate spin waves propagating along the edges in magnetic structures, under an in-plane DC magnetic field inclined with respect to the edge. The proposed edge spin waves overcome important challenges faced by previous technologies such as the manipulation of the spin wave propagation direction, and they substantially improve the capability of transmitting information at frequencies exceeding 10 GHz. The concept of the edge spin waves allows to design a broad of logic devices such as splitters, interferometers, or edge spin wave transistors with unprecedented characteristics and a potentially strong impact on information technologies.

  13. Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

    International Nuclear Information System (INIS)

    Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

    2015-01-01

    We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics

  14. Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact

    Science.gov (United States)

    Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

    2015-07-01

    We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.

  15. Thyrotoxicosis Presenting as Unilateral Drop Foot.

    Science.gov (United States)

    Hara, Kenju; Miyata, Hajime; Motegi, Takahide; Shibano, Ken; Ishiguro, Hideaki

    2017-01-01

    Neuromuscular disorders associated with hyperthyroidism have several variations in their clinical phenotype, such as ophthalmopathy, periodic paralysis, and thyrotoxic myopathy. We herein report an unusual case of thyrotoxic myopathy presenting as unilateral drop foot. Histopathological examinations of the left tibialis anterior muscle showed marked variation in the fiber size, mild inflammatory cell infiltration, and necrotic and regenerated muscle fibers with predominantly type 1 fiber atrophy. Medical treatment with propylthiouracil resulted in complete improvement of the left drop foot. This case expands the phenotype of thyrotoxicosis and suggests that thyrotoxicosis be considered as a possible cause of unilateral drop foot.

  16. Preparation and characterisation of superheated drop detectors

    International Nuclear Information System (INIS)

    Krishnamoorthy, P.

    1989-01-01

    Basic mechanism of bubble nucleation in superheated drops with respect to minimum energy of radiation and temperature is discussed. Experimental details and techniques for the preparation of Superheated Drop Detectors (SDDs) is explained. For the sample preparation, homogeneous composition of polymer (Morarfloc) and glycerine was used as the host medium and three different refrigerants Mafron-21, Mafron-12 and Mafron-11/12 (50:50) were chosen as the sensitive liquids. A pressure reactor developed at Health and Safety Laboratory is used for dispersing the sensitive liquid drops in the homogeneous composition under pressure. Some of the imporatant detector characteristics were studied. (author). 26 refs., 9 figs., 1 tab

  17. Oxide materials for spintronic device applications

    Science.gov (United States)

    Prestgard, Megan Campbell

    Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for

  18. Efficient spin-current injection in single-molecule magnet junctions

    Directory of Open Access Journals (Sweden)

    Haiqing Xie

    2018-01-01

    Full Text Available We study theoretically spin transport through a single-molecule magnet (SMM in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

  19. Efficient spin-current injection in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

    2018-01-01

    We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

  20. Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

    International Nuclear Information System (INIS)

    Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

    2007-01-01

    The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

  1. Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2007-10-15

    The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

  2. Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons

    International Nuclear Information System (INIS)

    Souma, Satofumi; Ogawa, Matsuto

    2014-01-01

    We show theoretically that pure spin current can be generated in zigzag edged graphene nanoribbons through the adiabatic pumping by edge selective pumping potentials. The origin of such pure spin current is the spin splitting of the edge localized states, which are oppositely spin polarized at opposite edges. In the proposed device, each edge of the ribbon is covered by two independent time-periodic local gate potentials with a definite phase difference, inducing the edge spin polarized current. When the pumping phase difference is opposite in sign between two edges, the total charge currents is zero and the pure edge spin current is generated

  3. Temperature measuring device

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; Bible, D.W.; Sohns, C.W.

    1999-10-19

    Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

  4. Incore monitoring device

    International Nuclear Information System (INIS)

    Tai, Ichiro; Shirayama, Shin-pei; Nozaki, Shin-ichi.

    1978-01-01

    Purpose: To provide an incore monitoring device wherein both radiation monitoring and acoustic monitoring are carried out simultaneously by one detector, whereby installation of the device and signal pick-up are facilitated. Incore conditions are accurately grasped. Constitution: When a neutron is irradiated in a state where a DC voltage is applied between the electrode and the vessel in the device, an ionization current is occured by (n.γ) reaction of the transformed substance as in an ionization chamber, Accordingly, a voltage drop occurs at both ends of the resistor of the radiation signal processing system, as a result of which a neutron flux can be detected. Further, when a sound is generated in the reactor, the monitoring device bottom wall which formed by a piezoelectric element detects the sound-waves. This output signal is picked up by the acoustic signal processing system to judge the generation of sound. (Aizawa, K.)

  5. Muon spin relaxation in random spin systems

    International Nuclear Information System (INIS)

    Toshimitsu Yamazaki

    1981-01-01

    The longitudinal relaxation function Gsub(z)(t) of the positive muon can reflect dynamical characters of local field in a unique way even when the correlation time is longer than the Larmor period of local field. This method has been applied to studies of spin dynamics in spin glass systems, revealing sharp but continuous temperature dependence of the correlation time. Its principle and applications are reviewed. (author)

  6. An acoustical bubble counter for superheated drop detectors

    International Nuclear Information System (INIS)

    Taylor, C.; Montvila, D.; Flynn, D.; Brennan, C.; D'Errico, F.

    2006-01-01

    A new bubble counter has been developed based on the well-established approach of detecting vaporization events acoustically in superheated drop detectors (SDDs). This counter is called the Framework Scientific ABC 1260, and it represents a major improvement over prior versions of this technology. By utilizing advanced acoustic pattern recognition software, the bubble formation event can be differentiated from ambient background noise, as well as from other acoustic signatures. Additional structural design enhancements include a relocation of the electronic components to the bottom of the device; thus allowing for greater stability, easier access to vial SDDs without exposure to system electronics. Upgrades in the electronics permit an increase in the speed of bubble detection by almost 50%, compared with earlier versions of the counters. By positioning the vial on top of the device, temperature and sound insulation can be accommodated for extreme environments. Lead shells can also be utilized for an enhanced response to high-energy neutrons. (authors)

  7. An acoustical bubble counter for superheated drop detectors.

    Science.gov (United States)

    Taylor, Chris; Montvila, Darius; Flynn, David; Brennan, Christopher; d'Errico, Francesco

    2006-01-01

    A new bubble counter has been developed based on the well-established approach of detecting vaporization events acoustically in superheated drop detectors (SDDs). This counter is called the Framework Scientific ABC 1260, and it represents a major improvement over prior versions of this technology. By utilizing advanced acoustic pattern recognition software, the bubble formation event can be differentiated from ambient background noise, as well as from other acoustic signatures. Additional structural design enhancements include a relocation of the electronic components to the bottom of the device; thus allowing for greater stability, easier access to vial SDDs without exposure to system electronics. Upgrades in the electronics permit an increase in the speed of bubble detection by almost 50%, compared with earlier versions of the counters. By positioning the vial on top of the device, temperature and sound insulation can be accommodated for extreme environments. Lead shells can also be utilized for an enhanced response to high-energy neutrons.

  8. Spin-polarizated transmissivity in an asymmetrical double barrier

    International Nuclear Information System (INIS)

    Teixeira, J D S; Frota, H O; Bittencourt, A C R

    2014-01-01

    The spin-polarized electron resonant tunnelling at zero magnetic field through a double barrier heterostructure like InAs/GaSb/InAs/GaSb/InAs has been calculated as a function of the electron energy. A model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunnelling, taking into account the k 3 dependence of the Dresselhaus Hamiltonian. For the directions ϕ=45 ∘ and 135 ∘ the spin mixing produces a 100% efficiency of polarization. Moreover, the effect of the Dresselhaus and Rashba spin-orbit interactions are shown to be quite favorable for the fabrication of spin filters and spintronic devices. (paper)

  9. Spin interactions in Graphene-Single Molecule Magnets Hybrids

    Science.gov (United States)

    Cervetti, Christian; Rettori, Angelo; Pini, Maria Gloria; Cornia, Andrea; Repollés, Aña; Luis, Fernando; Rauschenbach, Stephan; Dressel, Martin; Kern, Klaus; Burghard, Marko; Bogani, Lapo

    2014-03-01

    Graphene is a potential component of novel spintronics devices owing to its long spin diffusion length. Besides its use as spin-transport channel, graphene can be employed for the detection and manipulation of molecular spins. This requires an appropriate coupling between the sheets and the single molecular magnets (SMM). Here, we present a comprehensive characterization of graphene-Fe4 SMM hybrids. The Fe4 clusters are anchored non-covalently to the graphene following a diffusion-limited assembly and can reorganize into random networks when subjected to slightly elevated temperature. Molecules anchored on graphene sheets show unaltered static magnetic properties, whilst the quantum dynamics is profoundly modulated. Interaction with Dirac fermions becomes the dominant spin-relaxation channel, with observable effects produced by graphene phonons and reduced dipolar interactions. Coupling to graphene drives the spins over Villain's threshold, allowing the first observation of strongly-perturbative tunneling processes. Preliminary spin-transport experiments at low-temperature are further presented.

  10. Strain cupling of a nitrogen-vacancy center spin to a diamond mechanical oscillator

    OpenAIRE

    Teissier, J.; Barfuss, A.; Appel, P.; Neu, E.; Maletinsky, P.

    2014-01-01

    We report on single electronic spins coupled to the motion of mechanical resonators by a novel mechanism based on crystal strain. Our device consists of single-crystal diamond cantilevers with embedded nitrogen-vacancy center spins. Using optically detected electron spin resonance, we determine the unknown spin-strain coupling constants and demonstrate that our system resides well within the resolved sideband regime. We realize coupling strengths exceeding 10 MHz under mechanical driving and ...

  11. Resolved sidebands in a strain-coupled hybrid spin-oscillator system

    OpenAIRE

    Teissier, Jean; Barfuss, Arne; Appel, Patrick; Neu, Elke; Maletinsky, P.

    2014-01-01

    We report on single electronic spins coupled to the motion of mechanical resonators by a novel mechanism based on crystal strain. Our device consists of single-crystalline diamond cantilevers with embedded Nitrogen-Vacancy center spins. Using optically detected electron spin resonance, we determine the unknown spin-strain coupling constants and demonstrate that our system resides well within the resolved sideband regime. We realize coupling strengths exceeding ten MHz under mechanical driving...

  12. Spin-orbit torques in magnetic bilayers

    Science.gov (United States)

    Haney, Paul

    2015-03-01

    Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using a combination of approaches, from drift-diffusion to Boltzmann transport to first principles methods, we explore the relative contributions to the dynamics from these different effects. We additionally propose that the transverse spin current is locally enhanced over its bulk value in the vicinity of an interface which is oriented normal to the charge current direction.

  13. Micro-splashing by drop impacts

    KAUST Repository

    Thoroddsen, Sigurdur T; Takehara, Kohsei; Etoh, Takeharugoji

    2012-01-01

    We use ultra-high-speed video imaging to observe directly the earliest onset of prompt splashing when a drop impacts onto a smooth solid surface. We capture the start of the ejecta sheet travelling along the solid substrate and show how it breaks up immediately upon emergence from the underneath the drop. The resulting micro-droplets are much smaller and faster than previously reported and may have gone unobserved owing to their very small size and rapid ejection velocities, which approach 100 m s-1, for typical impact conditions of large rain drops. We propose a phenomenological mechanism which predicts the velocity and size distribution of the resulting microdroplets. We also observe azimuthal undulations which may help promote the earliest breakup of the ejecta. This instability occurs in the cusp in the free surface where the drop surface meets the radially ejected liquid sheet. © 2012 Cambridge University Press.

  14. Micro-splashing by drop impacts

    KAUST Repository

    Thoroddsen, Sigurdur T.

    2012-07-18

    We use ultra-high-speed video imaging to observe directly the earliest onset of prompt splashing when a drop impacts onto a smooth solid surface. We capture the start of the ejecta sheet travelling along the solid substrate and show how it breaks up immediately upon emergence from the underneath the drop. The resulting micro-droplets are much smaller and faster than previously reported and may have gone unobserved owing to their very small size and rapid ejection velocities, which approach 100 m s-1, for typical impact conditions of large rain drops. We propose a phenomenological mechanism which predicts the velocity and size distribution of the resulting microdroplets. We also observe azimuthal undulations which may help promote the earliest breakup of the ejecta. This instability occurs in the cusp in the free surface where the drop surface meets the radially ejected liquid sheet. © 2012 Cambridge University Press.

  15. Comparison of additive amount used in spin-coated and roll-coated organic solar cells

    DEFF Research Database (Denmark)

    Cheng, Pei; Lin, Yuze; Zawacka, Natalia Klaudia

    2014-01-01

    All-polymer and polymer/fullerene inverted solar cells were fabricated by spin-coating and roll-coating processes. The spin-coated small-area (0.04 cm(2)) devices were fabricated on indium tin oxide (ITO) coated glass substrates in nitrogen. The roll-coated large-area (1.0 cm(2)) devices were...

  16. Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.; Wan, C.H., E-mail: wancaihua@iphy.ac.cn; Yuan, Z.H.; Fang, C.; Kong, W.J.; Wu, H.; Zhang, Q.T.; Tao, B.S.; Han, X.F., E-mail: xfhan@iphy.ac.cn

    2017-04-15

    Confronting with the gigantic volume of data produced every day, raising integration density by reducing the size of devices becomes harder and harder to meet the ever-increasing demand for high-performance computers. One feasible path is to actualize more logic functions in one cell. In this respect, we experimentally demonstrate a prototype spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR). The cell can be easily programmed and reprogrammed to perform desired function. Furthermore, the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells. This work provides a prospective example of multi-functional spin logic cell with reprogrammability and nonvolatility, which will advance the application of spin logic devices. - Highlights: • Experimental demonstration of spin logic cell based on spin Hall effect. • Five logic functions are realized in a single logic cell. • The logic cell is reprogrammable. • Information in the cell is symmetry-protected. • The logic cell can be easily expanded to logic gate array.

  17. Interlayer quality dependent graphene spin valve

    International Nuclear Information System (INIS)

    Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

    2017-01-01

    It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

  18. Interlayer quality dependent graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2017-01-15

    It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

  19. Blood drop patterns: Formation and applications.

    Science.gov (United States)

    Chen, Ruoyang; Zhang, Liyuan; Zang, Duyang; Shen, Wei

    2016-05-01

    The drying of a drop of blood or plasma on a solid substrate leads to the formation of interesting and complex patterns. Inter- and intra-cellular and macromolecular interactions in the drying plasma or blood drop are responsible for the final morphologies of the dried patterns. Changes in these cellular and macromolecular components in blood caused by diseases have been suspected to cause changes in the dried drop patterns of plasma and whole blood, which could be used as simple diagnostic tools to identify the health of humans and livestock. However, complex physicochemical driving forces involved in the pattern formation are not fully understood. This review focuses on the scientific development in microscopic observations and pattern interpretation of dried plasma and whole blood samples, as well as the diagnostic applications of pattern analysis. Dried drop patterns of plasma consist of intricate visible cracks in the outer region and fine structures in the central region, which are mainly influenced by the presence and concentration of inorganic salts and proteins during drying. The shrinkage of macromolecular gel and its adhesion to the substrate surface have been thought to be responsible for the formation of the cracks. Dried drop patterns of whole blood have three characteristic zones; their formation as functions of drying time has been reported in the literature. Some research works have applied engineering treatment to the evaporation process of whole blood samples. The sensitivities of the resultant patterns to the relative humidity of the environment, the wettability of the substrates, and the size of the drop have been reported. These research works shed light on the mechanisms of spreading, evaporation, gelation, and crack formation of the blood drops on solid substrates, as well as on the potential applications of dried drop patterns of plasma and whole blood in diagnosis. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

  20. Pressure drop in flashing flow through obstructions

    International Nuclear Information System (INIS)

    Weinle, M.E.; Johnston, B.S.

    1985-01-01

    An experiment was designed to investigate the pressure drop for flashing flow across obstructions of different geometries at various flow rates. Tests were run using two different orifices to determine if the two-phase pressure drop could be characterized by the single phase loss coefficient and the general behavior of the two-phase multiplier. For the geometries studied, it was possible to correlate the multiplier in a geometry-independent fashion

  1. Pressure drop in T's in concentric ducts

    International Nuclear Information System (INIS)

    Shock, R.A.W.

    1983-02-01

    A set of experiments has been carried out to measure the pressure drop characteristics of single-phase flow in dividing and joining right-angled T's in a concentric ducting system. These have been compared with measured pressure drops in a simple round tube system. In most tests with the concentric system the number of velocity heads lost is either similar to, or more than, the value for the round tubes. (author)

  2. Spin Hall effects

    Science.gov (United States)

    Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

    2015-10-01

    Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

  3. The susceptibilities in the spin-S Ising model

    International Nuclear Information System (INIS)

    Ainane, A.; Saber, M.

    1995-08-01

    The susceptibilities of the spin-S Ising model are evaluated using the effective field theory introduced by Tucker et al. for studying general spin-S Ising model. The susceptibilities are studied for all spin values from S = 1/2 to S = 5/2. (author). 12 refs, 4 figs

  4. Aging effect of spin accumulation in non-local spin valves

    International Nuclear Information System (INIS)

    Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng; Wang, Le; Xu, Xiaoguang; Jiang, Yong

    2017-01-01

    Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

  5. Aging effect of spin accumulation in non-local spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Le, E-mail: wangle@ruc.edu.cn [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, Xiaoguang, E-mail: xgxu@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Jiang, Yong [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-06-15

    Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

  6. Hanging drop crystal growth apparatus and method

    Science.gov (United States)

    Carter, Daniel C. (Inventor); Smith, Robbie E. (Inventor)

    1989-01-01

    An apparatus (10) is constructed having a cylindrical enclosure (16) within which a disc-shaped wicking element (18) is positioned. A well or recess (22) is cut into an upper side (24) of this wicking element, and a glass cover plate or slip (28) having a protein drop disposed thereon is sealably positioned on the wicking element (18), with drop (12) being positioned over well or recess (22). A flow of control fluid is generated by a programmable gradient former (16), with this control fluid having a vapor pressure that is selectively variable. This flow of control fluid is coupled to the wicking element (18) where control fluid vapor diffusing from walls (26) of the recess (22) is exposed to the drop (12), forming a vapor pressure gradient between the drop (12) and the control fluid vapor. Initially, this gradient is adjusted to draw solvent from the drop (12) at a relatively high rate, and as the critical supersaturation point is approached (the point at which crystal nucleation occurs), the gradient is reduced to more slowly draw solvent from the drop (12). This allows discrete protein molecules more time to orient themselves into an ordered crystalline lattice, producing protein crystals which, when processed by X-ray crystallography, possess a high degree of resolution.

  7. Free drop impact analysis of shipping cask

    International Nuclear Information System (INIS)

    Pfeiffer, P.A.; Kennedy, J.M.

    1989-01-01

    The WHAMS-2D and WHAMS-3D codes were used to analyze the dynamic response of the RAS/TREAT shielded shipping cask subjected to transient leadings for the purpose of assessing potential damage to the various components that comprise the the cask. The paper describes how these codes can be used to provide and intermediate level of detail between full three-dimensional finite element calculations and hand calculations which are cost effective for design purposes. Three free drops were adressed: (1) a thirty foot axial drop on either end; (2) a thirty foot oblique angle drop with the cask having several different orientations from the vertical with impact on the cask corner; and (3) a thirty foot side drop with simultaneous impact on the lifting trunnion and the bottom end. Results are presented for two models of the side and oblique angle drops; one model includes only the mass of the lapped sleeves of depleted uranium (DU) while the other includes the mass and stiffness of the DU. The results of the end drop analyses are given for models with and without imperfections in the cask. Comparison of the analysis to hand calculations and simplified analyses are given. (orig.)

  8. Driving spin transition at interface: Role of adsorption configurations

    Science.gov (United States)

    Zhang, Yachao

    2018-01-01

    A clear insight into the electrical manipulation of molecular spins at interface is crucial to the design of molecule-based spintronic devices. Here we report on the electrically driven spin transition in manganocene physisorbed on a metallic surface in two different adsorption configurations predicted by ab initio techniques, including a Hubbard-U correction at the manganese site and accounting for the long-range van der Waals interactions. We show that the application of an electric field at the interface induces a high-spin to low-spin transition in the flat-lying manganocene, while it could hardly alter the high-spin ground state of the standing-up molecule. This phenomenon cannot be explained by either the molecule-metal charge transfer or the local electron correlation effects. We demonstrate a linear dependence of the intra-molecular spin-state splitting on the energy difference between crystal-field splitting and on-site Coulomb repulsion. After considering the molecule-surface binding energy shifts upon spin transition, we reproduce the obtained spin-state energetics. We find that the configuration-dependent responses of the spin-transition originate from the binding energy shifts instead of the variation of the local ligand field. Through these analyses, we obtain an intuitive understanding of the effects of molecule-surface contact on spin-crossover under electrical bias.

  9. Magnetization oscillations and waves driven by pure spin currents

    Energy Technology Data Exchange (ETDEWEB)

    Demidov, V.E. [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, Corrensstrasse 2-4, 48149 Muenster (Germany); Urazhdin, S. [Department of Physics, Emory University, Atlanta, GA 30322 (United States); Loubens, G. de [SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Klein, O. [INAC-SPINTEC, CEA/CNRS and Univ. Grenoble Alpes, 38000 Grenoble (France); Cros, V.; Anane, A. [Unité Mixte de Physique CNRS, Thales, Univ. Paris Sud, Université Paris-Saclay, 91767 Palaiseau (France); Demokritov, S.O., E-mail: demokrit@uni-muenster.de [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, Corrensstrasse 2-4, 48149 Muenster (Germany); Institute of Metal Physics, Ural Division of RAS, Yekaterinburg 620041 (Russian Federation)

    2017-02-23

    Recent advances in the studies of pure spin currents–flows of angular momentum (spin) not accompanied by the electric currents–have opened new horizons for the emerging technologies based on the electron’s spin degree of freedom, such as spintronics and magnonics. The main advantage of pure spin current, as compared to the spin-polarized electric current, is the possibility to exert spin transfer torque on the magnetization in thin magnetic films without the electrical current flow through the material. In addition to minimizing Joule heating and electromigration effects, this enables the implementation of spin torque devices based on the low-loss insulating magnetic materials, and offers an unprecedented geometric flexibility. Here we review the recent experimental achievements in investigations of magnetization oscillations excited by pure spin currents in different nanomagnetic systems based on metallic and insulating magnetic materials. We discuss the spectral properties of spin-current nano-oscillators, and relate them to the spatial characteristics of the excited dynamic magnetic modes determined by the spatially-resolved measurements. We also show that these systems support locking of the oscillations to external microwave signals, as well as their mutual synchronization, and can be used as efficient nanoscale sources of propagating spin waves.

  10. Higher spin gauge theories

    CERN Document Server

    Henneaux, Marc; Vasiliev, Mikhail A

    2017-01-01

    Symmetries play a fundamental role in physics. Non-Abelian gauge symmetries are the symmetries behind theories for massless spin-1 particles, while the reparametrization symmetry is behind Einstein's gravity theory for massless spin-2 particles. In supersymmetric theories these particles can be connected also to massless fermionic particles. Does Nature stop at spin-2 or can there also be massless higher spin theories. In the past strong indications have been given that such theories do not exist. However, in recent times ways to evade those constraints have been found and higher spin gauge theories have been constructed. With the advent of the AdS/CFT duality correspondence even stronger indications have been given that higher spin gauge theories play an important role in fundamental physics. All these issues were discussed at an international workshop in Singapore in November 2015 where the leading scientists in the field participated. This volume presents an up-to-date, detailed overview of the theories i...

  11. The Nuclear Spin Nanomagnet

    OpenAIRE

    Korenev, V. L.

    2007-01-01

    Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei brings the optical transition energy into resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of...

  12. Magnetization rotation or generation of incoherent spin waves? Suggestions for a spin-transfer effect experiment

    International Nuclear Information System (INIS)

    Bazaliy, Y. B.; Jones, B. A.

    2002-01-01

    ''Spin-transfer'' torque is created when electric current is passed through metallic ferromagnets and may have interesting applications in spintronics. So far it was experimentally studied in ''collinear'' geometries, where it is difficult to predict whether magnetization will coherently rotate or spin-waves will be generated. Here we propose an easy modification of existing experiment in which the spin-polarization of incoming current will no longer be collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with the magnetization rotation theory will be achieved. That can be an important step in reconciling alternative points of view on the effect of spin-transfer torque

  13. Operator spin foam models

    International Nuclear Information System (INIS)

    Bahr, Benjamin; Hellmann, Frank; Kaminski, Wojciech; Kisielowski, Marcin; Lewandowski, Jerzy

    2011-01-01

    The goal of this paper is to introduce a systematic approach to spin foams. We define operator spin foams, that is foams labelled by group representations and operators, as our main tool. A set of moves we define in the set of the operator spin foams (among other operations) allows us to split the faces and the edges of the foams. We assign to each operator spin foam a contracted operator, by using the contractions at the vertices and suitably adjusted face amplitudes. The emergence of the face amplitudes is the consequence of assuming the invariance of the contracted operator with respect to the moves. Next, we define spin foam models and consider the class of models assumed to be symmetric with respect to the moves we have introduced, and assuming their partition functions (state sums) are defined by the contracted operators. Briefly speaking, those operator spin foam models are invariant with respect to the cellular decomposition, and are sensitive only to the topology and colouring of the foam. Imposing an extra symmetry leads to a family we call natural operator spin foam models. This symmetry, combined with assumed invariance with respect to the edge splitting move, determines a complete characterization of a general natural model. It can be obtained by applying arbitrary (quantum) constraints on an arbitrary BF spin foam model. In particular, imposing suitable constraints on a spin(4) BF spin foam model is exactly the way we tend to view 4D quantum gravity, starting with the BC model and continuing with the Engle-Pereira-Rovelli-Livine (EPRL) or Freidel-Krasnov (FK) models. That makes our framework directly applicable to those models. Specifically, our operator spin foam framework can be translated into the language of spin foams and partition functions. Among our natural spin foam models there are the BF spin foam model, the BC model, and a model corresponding to the EPRL intertwiners. Our operator spin foam framework can also be used for more general spin

  14. Topologically Massive Higher Spin Gravity

    NARCIS (Netherlands)

    Bagchi, A.; Lal, S.; Saha, A.; Sahoo, B.

    2011-01-01

    We look at the generalisation of topologically massive gravity (TMG) to higher spins, specifically spin-3. We find a special "chiral" point for the spin-three, analogous to the spin-two example, which actually coincides with the usual spin-two chiral point. But in contrast to usual TMG, there is the

  15. The Drop Tower Bremen -Experiment Operation

    Science.gov (United States)

    Könemann, Thorben; von Kampen, Peter; Rath, Hans J.

    The idea behind the drop tower facility of the Center of Applied Space Technology and Micro-gravity (ZARM) in Bremen is to provide an inimitable technical opportunity of a daily access to short-term weightlessness on earth. In this way ZARM`s european unique ground-based microgravity laboratory displays an excellent economic alternative for research in space-related conditions at low costs comparable to orbital platforms. Many national and international ex-perimentalists motivated by these prospects decide to benefit from the high-quality and easy accessible microgravity environment only provided by the Drop Tower Bremen. Corresponding experiments in reduced gravity could open new perspectives of investigation methods and give scientists an impressive potential for a future technology and multidisciplinary applications on different research fields like Fundamental Physics, Astrophysics, Fluid Dynamics, Combus-tion, Material Science, Chemistry and Biology. Generally, realizing microgravity experiments at ZARM`s drop tower facility meet new requirements of the experimental hardware and may lead to some technical constraints in the setups. In any case the ZARM Drop Tower Operation and Service Company (ZARM FAB mbH) maintaining the drop tower facility is prepared to as-sist experimentalists by offering own air-conditioned laboratories, clean rooms, workshops and consulting engineers, as well as scientific personal. Furthermore, ZARM`s on-site apartment can be used for accommodations during the experiment campaigns. In terms of approaching drop tower experimenting, consulting of experimentalists is mandatory to successfully accomplish the pursued drop or catapult capsule experiment. For this purpose there will be a lot of expertise and help given by ZARM FAB mbH in strong cooperation to-gether with the experimentalists. However, in comparison to standard laboratory setups the drop or catapult capsule setup seems to be completely different at first view. While defining a

  16. The evaporation of the charged and uncharged water drops

    Indian Academy of Sciences (India)

    Drop evaporation; ventilation coefficient; evaporation-effect of electrical forces. ... to study the effect of ventilation on the rate of evaporation of the millimeter sized ... a ventilated drop to reach its equilibrium temperature increases with the drop ...

  17. Spin-orbit and spin-lattice coupling

    International Nuclear Information System (INIS)

    Bauer, Gerrit E.W.; Ziman, Timothy; Mori, Michiyasu

    2014-01-01

    We pursued theoretical research on the coupling of electron spins in the condensed matter to the lattice as mediated by the spin-orbit interaction with special focus on the spin and anomalous Hall effects. (author)

  18. [Optimize dropping process of Ginkgo biloba dropping pills by using design space approach].

    Science.gov (United States)

    Shen, Ji-Chen; Wang, Qing-Qing; Chen, An; Pan, Fang-Lai; Gong, Xing-Chu; Qu, Hai-Bin

    2017-07-01

    In this paper, a design space approach was applied to optimize the dropping process of Ginkgo biloba dropping pills. Firstly, potential critical process parameters and potential process critical quality attributes were determined through literature research and pre-experiments. Secondly, experiments were carried out according to Box-Behnken design. Then the critical process parameters and critical quality attributes were determined based on the experimental results. Thirdly, second-order polynomial models were used to describe the quantitative relationships between critical process parameters and critical quality attributes. Finally, a probability-based design space was calculated and verified. The verification results showed that efficient production of Ginkgo biloba dropping pills can be guaranteed by operating within the design space parameters. The recommended operation ranges for the critical dropping process parameters of Ginkgo biloba dropping pills were as follows: dropping distance of 5.5-6.7 cm, and dropping speed of 59-60 drops per minute, providing a reference for industrial production of Ginkgo biloba dropping pills. Copyright© by the Chinese Pharmaceutical Association.

  19. Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

    Science.gov (United States)

    Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

    2018-01-01

    We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

  20. Tuning spin-polarized transport in organic semiconductors

    Science.gov (United States)

    Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

    Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

  1. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  2. Magnon detection using a ferroic collinear multilayer spin valve.

    Science.gov (United States)

    Cramer, Joel; Fuhrmann, Felix; Ritzmann, Ulrike; Gall, Vanessa; Niizeki, Tomohiko; Ramos, Rafael; Qiu, Zhiyong; Hou, Dazhi; Kikkawa, Takashi; Sinova, Jairo; Nowak, Ulrich; Saitoh, Eiji; Kläui, Mathias

    2018-03-14

    Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y 3 Fe 5 O 12 |CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y 3 Fe 5 O 12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

  3. An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

    Science.gov (United States)

    Kazemi, Mohammad

    2017-11-10

    The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

  4. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  5. Wiggler as spin rotators for RHIC

    International Nuclear Information System (INIS)

    Luccio, A.; Conte, M.

    1993-01-01

    The spin of a polarized particle in a circular accelerator can be rotated with an arrangement of dipoles with field mutually perpendicular and perpendicular to the orbit. To achieve spin rotation, a given field integral value is required. The device must be designed in a way that the particle orbit is distorted as little as possible. It is shown that wigglers with many periods are suitable to achieve spin rotation with minimum orbit distortions. Wigglers are also more compact than more established structures and will use less electric power. Additional advantages include their use for non distructive beam diagnostics. Results are given for the Relativistic Heavy Ion Collider (RHIC) in the polarized proton mode

  6. Effect of spin rotation coupling on spin transport

    International Nuclear Information System (INIS)

    Chowdhury, Debashree; Basu, B.

    2013-01-01

    We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

  7. Effect of spin rotation coupling on spin transport

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

    2013-12-15

    We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

  8. Spin temperature concept verified by optical magnetometry of nuclear spins

    Science.gov (United States)

    Vladimirova, M.; Cronenberger, S.; Scalbert, D.; Ryzhov, I. I.; Zapasskii, V. S.; Kozlov, G. G.; Lemaître, A.; Kavokin, K. V.

    2018-01-01

    We develop a method of nonperturbative optical control over adiabatic remagnetization of the nuclear spin system and apply it to verify the spin temperature concept in GaAs microcavities. The nuclear spin system is shown to exactly follow the predictions of the spin temperature theory, despite the quadrupole interaction that was earlier reported to disrupt nuclear spin thermalization. These findings open a way for the deep cooling of nuclear spins in semiconductor structures, with the prospect of realizing nuclear spin-ordered states for high-fidelity spin-photon interfaces.

  9. Bubble and Drop Nonlinear Dynamics (BDND)

    Science.gov (United States)

    Trinh, E. H.; Leal, L. Gary; Thomas, D. A.; Crouch, R. K.

    1998-01-01

    Free drops and bubbles are weakly nonlinear mechanical systems that are relatively simple to characterize experimentally in 1-G as well as in microgravity. The understanding of the details of their motion contributes to the fundamental study of nonlinear phenomena and to the measurement of the thermophysical properties of freely levitated melts. The goal of this Glovebox-based experimental investigation is the low-gravity assessment of the capabilities of a modular apparatus based on ultrasonic resonators and on the pseudo- extinction optical method. The required experimental task is the accurate measurements of the large-amplitude dynamics of free drops and bubbles in the absence of large biasing influences such as gravity and levitation fields. A single-axis levitator used for the positioning of drops in air, and an ultrasonic water-filled resonator for the trapping of air bubbles have been evaluated in low-gravity and in 1-G. The basic feasibility of drop positioning and shape oscillations measurements has been verified by using a laptop-interfaced automated data acquisition and the optical extinction technique. The major purpose of the investigation was to identify the salient technical issues associated with the development of a full-scale Microgravity experiment on single drop and bubble dynamics.

  10. Drop impact entrapment of bubble rings

    KAUST Repository

    Thoraval, M.-J.

    2013-04-29

    We use ultra-high-speed video imaging to look at the initial contact of a drop impacting on a liquid layer. We observe experimentally the vortex street and the bubble-ring entrapments predicted numerically, for high impact velocities, by Thoraval et al. (Phys. Rev. Lett., vol. 108, 2012, article 264506). These dynamics mainly occur within 50 -s after the first contact, requiring imaging at 1 million f.p.s. For a water drop impacting on a thin layer of water, the entrapment of isolated bubbles starts through azimuthal instability, which forms at low impact velocities, in the neck connecting the drop and pool. For Reynolds number Re above -12 000, up to 10 partial bubble rings have been observed at the base of the ejecta, starting when the contact is -20% of the drop size. More regular bubble rings are observed for a pool of ethanol or methanol. The video imaging shows rotation around some of these air cylinders, which can temporarily delay their breakup into micro-bubbles. The different refractive index in the pool liquid reveals the destabilization of the vortices and the formation of streamwise vortices and intricate vortex tangles. Fine-scale axisymmetry is thereby destroyed. We show also that the shape of the drop has a strong influence on these dynamics. 2013 Cambridge University Press.

  11. Drop Testing Representative Multi-Canister Overpacks

    Energy Technology Data Exchange (ETDEWEB)

    Snow, Spencer D. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Morton, Dana K. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2015-06-01

    The objective of the work reported herein was to determine the ability of the Multi- Canister Overpack (MCO) canister design to maintain its containment boundary after an accidental drop event. Two test MCO canisters were assembled at Hanford, prepared for testing at the Idaho National Engineering and Environmental Laboratory (INEEL), drop tested at Sandia National Laboratories, and evaluated back at the INEEL. In addition to the actual testing efforts, finite element plastic analysis techniques were used to make both pre-test and post-test predictions of the test MCOs structural deformations. The completed effort has demonstrated that the canister design is capable of maintaining a 50 psig pressure boundary after drop testing. Based on helium leak testing methods, one test MCO was determined to have a leakage rate not greater than 1x10-5 std cc/sec (prior internal helium presence prevented a more rigorous test) and the remaining test MCO had a measured leakage rate less than 1x10-7 std cc/sec (i.e., a leaktight containment) after the drop test. The effort has also demonstrated the capability of finite element methods using plastic analysis techniques to accurately predict the structural deformations of canisters subjected to an accidental drop event.

  12. Spin labels. Applications in biology

    International Nuclear Information System (INIS)

    Frangopol, T.P.; Frangopol, M.; Ionescu, S.M.; Pop, I.V.; Benga, G.

    1980-11-01

    The main applications of spin labels in the study of biomembranes, enzymes, nucleic acids, in pharmacology, spin immunoassay are reviewed along with the fundamentals of the spin label method. 137 references. (author)

  13. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  14. Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

    KAUST Repository

    Ndiaye, Papa Birame

    2017-10-31

    In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

  15. Physics lab in spin

    CERN Multimedia

    Hawkes, N

    1999-01-01

    RAL is fostering commerical exploitation of its research and facilities in two main ways : spin-out companies exploit work done at the lab, spin-in companies work on site taking advantage of the facilities and the expertise available (1/2 page).

  16. Summary: Symmetries and spin

    International Nuclear Information System (INIS)

    Haxton, W.C.

    1988-01-01

    I discuss a number of the themes of the Symmetries and Spin session of the 8th International Symposium on High Energy Spin Physics: parity nonconservation, CP/T nonconservation, and tests of charge symmetry and charge independence. 28 refs., 1 fig

  17. Spin, mass, and symmetry

    International Nuclear Information System (INIS)

    Peskin, M.E.

    1994-01-01

    When the strong interactions were a mystery, spin seemed to be just a complication on top of an already puzzling set of phenomena. But now that particle physicists have understood the strong, weak, and electromagnetic interactions, to be gauge theories, with matter built of quarks and leptons, it is recognized that the special properties of spin 1/2 and spin 1 particles have taken central role in the understanding of Nature. The lectures in this summer school will be devoted to the use of spin in unravelling detailed questions about the fundamental interactions. Thus, why not begin by posing a deeper question: Why is there spin? More precisely, why do the basic pointlike constituents of Nature carry intrinsic nonzero quanta of angular momentum? Though the authos has found no definite answer to this question, the pursuit of an answer has led through a wonderful tangle of speculations on the deep structure of Nature. Is spin constructed or is it fundamental? Is it the requirement of symmetry? In the furthest flights taken, it seems that space-time itself is too restrictive a notion, and that this must be generalized in order to gain a full appreciation of spin. In any case, there is no doubt that spin must play a central role in unlocking the mysteries of fundamental physics

  18. Classical spins in superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Shiba, H [Tokyo Univ.; Maki, K

    1968-08-01

    It is shown that there exists a localized excited state in the energy gap in a superconductor with a classical spin. At finite concentration localized excited states around classical spins form an impurity band. The process of growth of the impurity band and its effects on observable quantities are investigated.

  19. Spin, mass, and symmetry

    Energy Technology Data Exchange (ETDEWEB)

    Peskin, M.E. [Stanford Univ., CA (United States)

    1994-12-01

    When the strong interactions were a mystery, spin seemed to be just a complication on top of an already puzzling set of phenomena. But now that particle physicists have understood the strong, weak, and electromagnetic interactions, to be gauge theories, with matter built of quarks and leptons, it is recognized that the special properties of spin 1/2 and spin 1 particles have taken central role in the understanding of Nature. The lectures in this summer school will be devoted to the use of spin in unravelling detailed questions about the fundamental interactions. Thus, why not begin by posing a deeper question: Why is there spin? More precisely, why do the basic pointlike constituents of Nature carry intrinsic nonzero quanta of angular momentum? Though the authos has found no definite answer to this question, the pursuit of an answer has led through a wonderful tangle of speculations on the deep structure of Nature. Is spin constructed or is it fundamental? Is it the requirement of symmetry? In the furthest flights taken, it seems that space-time itself is too restrictive a notion, and that this must be generalized in order to gain a full appreciation of spin. In any case, there is no doubt that spin must play a central role in unlocking the mysteries of fundamental physics.

  20. More spinoff from spin

    International Nuclear Information System (INIS)

    Masaike, Akira

    1993-01-01

    Despite playing a major role in today's Standard Model, spin - the intrinsic angular momentum carried by particles - is sometimes dismissed as an inessential complication. However several major spin questions with important implications for the Standard Model remain unanswered, and recent results and new technological developments made the 10th International Symposium on High Energy Spin Physics, held in Nagoya, Japan, in November, highly topical. The symposium covered a wide range of physics, reflecting the diversity of spin effects, however four main themes were - the spin content of the nucleon, tests of symmetries and physics beyond standard models, intermediate energy physics, and spin technologies. Opening the meeting, T. Kinoshita reviewed the status of measurements of the anomalous magnetic moment (g-2) of the electron and the muon. The forthcoming experiment at Brookhaven (September 1991, page 23) will probe beyond the energy ranges open to existing electronpositron colliders. For example muon substructure will be opened up to 5 TeV and Ws to 2 TeV. R.L. Jaffe classified quark-parton distributions in terms of their spin dependence, pointing out their leftright attributes, and emphasized the importance of measuring transverse spin distributions through lepton pair production

  1. Spin-exchange and spin-destruction rates for the 3He-Na system

    International Nuclear Information System (INIS)

    Borel, P.I.; Soegaard, L.V.; Svendsen, W.E.; Andersen, N.

    2003-01-01

    Optically pumped Na is used as a spin-exchange partner to polarize 3 He. Polarizations around 20% have routinely been achieved in sealed spherical glass cells containing 3 He, N 2 , and a few droplets of Na. An optical technique has been developed to determine the Na- 3 He spin-exchange rate coefficient. By monitoring the Na spin relaxation ''in the dark,'' the average Na-Na spin-destruction cross section at 330 degree sign C is estimated to be around 5x10 -19 cm 2 . This value is 2-5 (15-30) times smaller than the previously reported values for the K-K (Rb-Rb) spin-relaxation cross section. In the temperature range 310-355 degree sign C the spin-exchange rate coefficient is found to be (6.1±0.6)x10 -20 cm 3 /s with no detectable temperature dependence. This value is in good agreement with a previous theoretical estimate reported by Walker and it is only slightly lower than the corresponding Rb- 3 He spin-exchange rate coefficient. The total Na- 3 He spin-destruction rate coefficient is, within errors, found to be the same as the Na- 3 He spin-exchange rate coefficient, thereby indicating that the maximum possible photon efficiency may approach unity for the Na- 3 He system. A technique, in which a charge-coupled device camera is used to take images of faint unquenched fluorescence light, has been utilized to allow for an instantaneous determination of the sodium number densities during the rate coefficient measurements

  2. Solvable model of spin-dependent transport through a finite array of quantum dots

    International Nuclear Information System (INIS)

    Avdonin, S A; Dmitrieva, L A; Kuperin, Yu A; Sartan, V V

    2005-01-01

    The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to a 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach a few per cent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy intervals. For the same energy intervals the conductance of the device reaches the value ∼1 in [e 2 /πℎ] units. As a result a model of the spin gun which transforms the spin-unpolarized electron beam into a completely polarized one is suggested

  3. Spin physics at BNL

    International Nuclear Information System (INIS)

    Lowenstein, D.I.

    1985-01-01

    Spin Physics at the Alternating Gradient Synchrotron (AGS) of Brookhaven National Laboratory is the most recent of new capabilities being explored at this facility. During the summer of 1984 the AGS accelerated beams of polarized protons to 16.5 GeV/c at 40% polarization to two experiments (E782, E785). These experiments; single spin asymmetry in inclusive polarized pp interactions; and spin-spin effects in polarized pp elastic scattering, operated at the highest polarized proton energy ever achieved by any accelerator in the world. These experiments are reviewed after the complementary spin physics program with unpolarized protons, and the future possibilities with a booster injector for the AGS and the secondary benefits of a Relativisitic Heavy Ion Collider (RHIC), are placed within the context of the present physics program

  4. Superconductivity and spin fluctuations

    International Nuclear Information System (INIS)

    Scalapino, D.J.

    1999-01-01

    The organizers of the Memorial Session for Herman Rietschel asked that the author review some of the history of the interplay of superconductivity and spin fluctuations. Initially, Berk and Schrieffer showed how paramagnon spin fluctuations could suppress superconductivity in nearly-ferromagnetic materials. Following this, Rietschel and various co-workers wrote a number of papers in which they investigated the role of spin fluctuations in reducing the Tc of various electron-phonon superconductors. Paramagnon spin fluctuations are also believed to provide the p-wave pairing mechanism responsible for the superfluid phases of 3 He. More recently, antiferromagnetic spin fluctuations have been proposed as the mechanism for d-wave pairing in the heavy-fermion superconductors and in some organic materials as well as possibly the high-Tc cuprates. Here the author will review some of this early history and discuss some of the things he has learned more recently from numerical simulations

  5. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  6. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  7. Ultrasonic characterization of single drops of liquids

    Energy Technology Data Exchange (ETDEWEB)

    Sinha, Dipen N. (Los Alamos, NM)

    1998-01-01

    Ultrasonic characterization of single drops of liquids. The present invention includes the use of two closely spaced transducers, or one transducer and a closely spaced reflector plate, to form an interferometer suitable for ultrasonic characterization of droplet-size and smaller samples without the need for a container. The droplet is held between the interferometer elements, whose distance apart may be adjusted, by surface tension. The surfaces of the interferometer elements may be readily cleansed by a stream of solvent followed by purified air when it is desired to change samples. A single drop of liquid is sufficient for high-quality measurement. Examples of samples which may be investigated using the apparatus and method of the present invention include biological specimens (tear drops; blood and other body fluid samples; samples from tumors, tissues, and organs; secretions from tissues and organs; snake and bee venom, etc.) for diagnostic evaluation, samples in forensic investigations, and detection of drugs in small quantities.

  8. Reactor shutdown device

    Energy Technology Data Exchange (ETDEWEB)

    Harada, Kiyoshi; Aono, Hidehiro [Hitachi Ltd., Tokyo (Japan); Fujita, Kaoru; Ishikawa, Tsuyoshi

    1996-02-20

    The present invention concerns a reactor shutdown device of a LMFBR type reactor, and provides a magnetic circuit having a sharp changing property of holding force relative to temperature change. Namely, a magnetic bridge is attached to a portion of the magnetic circuit. Then, required conditions are satisfied. Alternatively, even if the temperature dependent change of magnetic saturation of a temperature sensing alloy itself is somewhat moderated, the holding force from an erroneous dropping preventive temperature to a separating temperature can be abruptly reduced while keeping the holding force at a temperature lower than the erroneous dropping preventive temperature. Provision of the magnetic bridge increases the temperature dependent change of the holding force of the entire magnetic circuit. As a result, margin for the design of the temperature sensing alloy is extended. Actual design is enabled, and the range for selecting the temperature sensing alloy can be enlarged. (I.S.).

  9. Reactor shutdown device

    International Nuclear Information System (INIS)

    Harada, Kiyoshi; Aono, Hidehiro; Fujita, Kaoru; Ishikawa, Tsuyoshi.

    1996-01-01

    The present invention concerns a reactor shutdown device of a LMFBR type reactor, and provides a magnetic circuit having a sharp changing property of holding force relative to temperature change. Namely, a magnetic bridge is attached to a portion of the magnetic circuit. Then, required conditions are satisfied. Alternatively, even if the temperature dependent change of magnetic saturation of a temperature sensing alloy itself is somewhat moderated, the holding force from an erroneous dropping preventive temperature to a separating temperature can be abruptly reduced while keeping the holding force at a temperature lower than the erroneous dropping preventive temperature. Provision of the magnetic bridge increases the temperature dependent change of the holding force of the entire magnetic circuit. As a result, margin for the design of the temperature sensing alloy is extended. Actual design is enabled, and the range for selecting the temperature sensing alloy can be enlarged. (I.S.)

  10. Muonium spin exchange as a Poisson process: magnetic field dependence in transverse fields

    International Nuclear Information System (INIS)

    Senba, Masayoshi; British Columbia Univ., Vancouver, BC

    1993-01-01

    The muonium spin exchange has been investigated as a function of transverse magnetic field strength, where the Poisson nature of collisions is exploited to simplify the calculation. In intermediate fields where the so-called two-frequency muonium signal is observed, the muonium relaxation due to spin exchange is 1.5 times faster than in low fields. In even higher fields, the observed relaxation rate drops back to the low field value. Since the relaxation rate due to a chemical reaction is field independent, such a distinct field dependence in spin exchange can be used in distinguishing experimentally spin exchange from chemical reactions. The time evolution of the muon spin polarization in the presence of muonium spin exchange has been expressed in a simple analytical closed form. (author)

  11. Spin Hall and spin swapping torques in diffusive ferromagnets

    KAUST Repository

    Pauyac, C. O.

    2017-12-08

    A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

  12. Spin Hall and spin swapping torques in diffusive ferromagnets

    KAUST Repository

    Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

    2017-01-01

    A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

  13. Liquid toroidal drop under uniform electric field

    Science.gov (United States)

    Zabarankin, Michael

    2017-06-01

    The problem of a stationary liquid toroidal drop freely suspended in another fluid and subjected to an electric field uniform at infinity is addressed analytically. Taylor's discriminating function implies that, when the phases have equal viscosities and are assumed to be slightly conducting (leaky dielectrics), a spherical drop is stationary when Q=(2R2+3R+2)/(7R2), where R and Q are ratios of the phases' electric conductivities and dielectric constants, respectively. This condition holds for any electric capillary number, CaE, that defines the ratio of electric stress to surface tension. Pairam and Fernández-Nieves showed experimentally that, in the absence of external forces (CaE=0), a toroidal drop shrinks towards its centre, and, consequently, the drop can be stationary only for some CaE>0. This work finds Q and CaE such that, under the presence of an electric field and with equal viscosities of the phases, a toroidal drop having major radius ρ and volume 4π/3 is qualitatively stationary-the normal velocity of the drop's interface is minute and the interface coincides visually with a streamline. The found Q and CaE depend on R and ρ, and for large ρ, e.g. ρ≥3, they have simple approximations: Q˜(R2+R+1)/(3R2) and CaE∼3 √{3 π ρ / 2 } (6 ln ⁡ρ +2 ln ⁡[96 π ]-9 )/ (12 ln ⁡ρ +4 ln ⁡[96 π ]-17 ) (R+1 ) 2/ (R-1 ) 2.

  14. Spin-dependent Peltier effect in 3D topological insulators

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

    2013-03-01

    The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

  15. The new Drop Tower catapult system

    Science.gov (United States)

    von Kampen, Peter; Kaczmarczik, Ulrich; Rath, Hans J.

    2006-07-01

    The Center of Applied Space Technology and Microgravity (ZARM) was founded in 1985 as an institute of the University Bremen, which focuses on research on gravitational and space-related phenomena. In 1988, the construction of the "Drop Tower" began. Since then, the eye-catching tower with a height of 146 m and its characteristic glass roof has become the emblem of the technology centre in Bremen. The Drop Tower Bremen provides a facility for experiments under conditions of weightlessness. Items are considered weightless, when they are in "free fall", i.e. moving without propulsion within the gravity field of the earth. The height of the tower limits the simple "free fall" experiment period to max. 4.74 s. With the inauguration of the catapult system in December 2004, the ZARM is entering a new dimension. This world novelty will meet scientists' demands of extending the experiment period up to 9.5 s. Since turning the first sod on May 3rd, 1988, the later installation of the catapult system has been taken into account by building the necessary chamber under the tower. The catapult system is located in a chamber 10 m below the base of the tower. This chamber is almost completely occupied by 12 huge pressure tanks. These tanks are placed around the elongation of the vacuum chamber of the drop tube. In its centre there is the pneumatic piston that accelerates the drop capsule by the pressure difference between the vacuum inside the drop tube and the pressure inside the tanks. The acceleration level is adjusted by means of a servo hydraulic breaking system controlling the piston velocity. After only a quarter of a second the drop capsule achieves its lift-off speed of 175 km/h. With this exact speed, the capsule will rise up to the top of the tower and afterwards fall down again into the deceleration unit which has been moved under the drop tube in the meantime. The scientific advantages of the doubled experiment time are obvious: during almost 10 s of high

  16. Shuttlecock Velocity of a Badminton Drop Shot

    Directory of Open Access Journals (Sweden)

    Ampharin Ongvises

    2013-01-01

    Full Text Available In a badminton ‘drop shot’, the shuttlecock is struck by a non-rotating racquet at low speed. In this investigation, a shuttlecock was hit by a badminton racquet in a linear collision, simulating a drop shot. The collision was recorded with high-speed video and the velocities of the racquet and shuttlecock determined. The relationship between the impact velocity of the racquet and the velocity of the shuttlecock as it leaves the badminton racquet after collision was found to be proportional over the range tested.

  17. Shuttlecock Velocity of a Badminton Drop Shot

    Directory of Open Access Journals (Sweden)

    Ampharin Ongvises

    2013-12-01

    Full Text Available In a badminton ‘drop shot’, the shuttlecock is struck by a non-rotating racquet at low speed. In this investigation, a shuttlecock was hit by a badminton racquet in a linear collision, simulating a drop shot. The collision was recorded with high-speed video and the velocities of the racquet and shuttlecock determined. The relationship between the impact velocity of the racquet and the velocity of the shuttlecock as it leaves the badminton racquet after collision was found to be proportional over the range tested.

  18. Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

    Science.gov (United States)

    Majidi, Danial; Faez, Rahim

    2017-02-01

    In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

  19. Flow rate-pressure drop relation for deformable shallow microfluidic channels

    Science.gov (United States)

    Christov, Ivan C.; Cognet, Vincent; Shidhore, Tanmay C.; Stone, Howard A.

    2018-04-01

    Laminar flow in devices fabricated from soft materials causes deformation of the passage geometry, which affects the flow rate--pressure drop relation. For a given pressure drop, in channels with narrow rectangular cross-section, the flow rate varies as the cube of the channel height, so deformation can produce significant quantitative effects, including nonlinear dependence on the pressure drop [{Gervais, T., El-Ali, J., G\\"unther, A. \\& Jensen, K.\\ F.}\\ 2006 Flow-induced deformation of shallow microfluidic channels.\\ \\textit{Lab Chip} \\textbf{6}, 500--507]. Gervais et. al. proposed a successful model of the deformation-induced change in the flow rate by heuristically coupling a Hookean elastic response with the lubrication approximation for Stokes flow. However, their model contains a fitting parameter that must be found for each channel shape by performing an experiment. We present a perturbation approach for the flow rate--pressure drop relation in a shallow deformable microchannel using the theory of isotropic quasi-static plate bending and the Stokes equations under a lubrication approximation (specifically, the ratio of the channel's height to its width and of the channel's height to its length are both assumed small). Our result contains no free parameters and confirms Gervais et. al.'s observation that the flow rate is a quartic polynomial of the pressure drop. The derived flow rate--pressure drop relation compares favorably with experimental measurements.

  20. Liquid-metal pin-fin pressure drop by correlation in cross flow

    International Nuclear Information System (INIS)

    Wang, Zhibi; Kuzay, T.M.; Assoufid, L.

    1994-01-01

    The pin-fin configuration is widely used as a heat transfer enhancement method in high-heat-flux applications. Recently, the pin-fin design with liquid-metal coolant was also applied to synchrotron-radiation beamline devices. This paper investigates the pressure drop in a pin-post design beamline mirror with liquid gallium as the coolant. Because the pin-post configuration is a relatively new concept, information in literature about pin-post mirrors or crystals is rare, and information about the pressure drop in pin-post mirrors with liquid metal as the coolant is even more sparse. Due to this the authors considered the cross flow in cylinder-array geometry, which is very similar to that of the pin-post, to examine the pressure drop correlation with liquid metals over pin fins. The cross flow of fluid with various fluid characteristics or properties through a tube bank was studied so that the results can be scaled to the pin-fin geometry with liquid metal as the coolant. Study lead to two major variables to influence the pressure drop: fluid properties, viscosity and density, and the relative length of the posts. Correlation of the pressure drop between long and short posts and the prediction of the pressure drop of liquid metal in the pin-post mirror and comparison with an existing experiment are addressed

  1. Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

    Directory of Open Access Journals (Sweden)

    J. Sánchez-Barriga

    2014-03-01

    Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

  2. Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

    Science.gov (United States)

    Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

    2018-03-01

    Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

  3. Doppler Velocimetry of Current Driven Spin Helices in a Two-Dimensional Electron Gas

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Luyi [Univ. of California, Berkeley, CA (United States)

    2013-05-17

    Spins in semiconductors provide a pathway towards the development of spin-based electronics. The appeal of spin logic devices lies in the fact that the spin current is even under time reversal symmetry, yielding non-dissipative coupling to the electric field. To exploit the energy-saving potential of spin current it is essential to be able to control it. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at room temperature remains elusive. Further progress requires a deeper understanding of the propagation of spin polarization, particularly in the high mobility semiconductors used for devices. This dissertation presents the demonstration and application of a powerful new optical technique, Doppler spin velocimetry, for probing the motion of spin polarization at the level of 1 nm on a picosecond time scale. We discuss experiments in which this technique is used to measure the motion of spin helices in high mobility n-GaAs quantum wells as a function of temperature, in-plane electric field, and photoinduced spin polarization amplitude. We find that the spin helix velocity changes sign as a function of wave vector and is zero at the wave vector that yields the largest spin lifetime. This observation is quite striking, but can be explained by the random walk model that we have developed. We discover that coherent spin precession within a propagating spin density wave is lost at temperatures near 150 K. This finding is critical to understanding why room temperature operation of devices based on electrical gate control of spin current has so far remained elusive. We report that, at all temperatures, electron spin polarization co-propagates with the high-mobility electron sea, even when this requires an unusual form of separation of spin density from photoinjected electron density. Furthermore, although the spin packet co-propagates with the two-dimensional electron gas, spin diffusion is strongly

  4. In situ UV-visible absorption during spin-coating of organic semiconductors: A new probe for organic electronics and photovoltaics

    KAUST Repository

    Abdelsamie, Maged; Zhao, Kui; Niazi, Muhammad Rizwan; Chou, Kang Wei; Amassian, Aram

    2014-01-01

    Spin-coating is the most commonly used technique for the lab-scale production of solution processed organic electronic, optoelectronic and photovoltaic devices. Spin-coating produces the most efficient solution-processed organic solar cells and has

  5. Relaxation of electron–hole spins in strained graphene nanoribbons

    International Nuclear Information System (INIS)

    Prabhakar, Sanjay; Melnik, Roderick

    2015-01-01

    We investigate the influence of magnetic field originating from the electromechanical effect on the spin-flip behaviors caused by electromagnetic field radiation in the strained graphene nanoribbons (GNRs). We show that the spin splitting energy difference (≈10 meV) due to pseudospin is much larger than the spin-orbit coupling effect (Balakrishnan et al 2013 Nat. Phys. 9 284) that might provide an evidence of broken symmetry of degeneracy. The induced spin splitting energy due to ripple waves can be further enhanced with increasing values of applied tensile edge stress for potential applications in straintronic devices. In particular, we show that the enhancement in the magnitude of the ripple waves due to externally applied tensile edge stress extends the tuning of spin-flip behaviors to larger widths of GNRs. (paper)

  6. Donor-driven spin relaxation in multivalley semiconductors.

    Science.gov (United States)

    Song, Yang; Chalaev, Oleg; Dery, Hanan

    2014-10-17

    The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

  7. Magnetic droplets in nano-contact spin-torque oscillators with perpendicular magnetic anisotropy

    Science.gov (United States)

    Åkerman, Johan

    2013-03-01

    The theoretical prediction, by Ivanov and Kosevich, of ``magnon drop'' solitons in thin films with perpendicular magnetic anisotropy (PMA) and zero damping, dates back to the 1970s. More recently, Hoefer, Silva and Keller, demonstrated analytically and numerically that related ``magnetic droplet'' solitons should be possible to excite in nano-contact spin-torque oscillators (NC-STOs) based on PMA materials, where spin transfer torque locally realizes the zero-damping condition required in. In my talk, I will present the first experimental demonstration of such magnetic droplets, realized using 50-100 nm diameter nano-contacts (NCs) fabricated on top of orthogonal GMR stacks of Co8/Cu/Co0.3[Ni0.8/Co0.4]x4 (thicknesses in nm). The nucleation of a magnetic droplet manifests itself as a dramatic 10 GHz drop in microwave signal frequency at a drive-current dependent critical perpendicular field of the order of 0.5 - 1 T. The drop in frequency is accompanied by a simultaneous sharp resistance increase of the device and a sign change of its magnetoresistance, directly indicating the existence of a reversed magnetization in a region of the [Co/Ni] free layer underneath the NC. As predicted by numerical simulations the droplet exhibits rich magnetodynamic properties, experimentally observed as auto-modulation at approximately 1 GHz and sometimes sidebands at 1/2 and 3/2 of the fundamental droplet frequency. The 1 GHz modulation can be shown numerically to be related to the drift instability of the droplet, albeit with enough restoring force to make the droplet perform a periodic motion instead of leaving the NC region. The sidebands at 1/2 and 3/2 the droplet frequency are related to eigenmodes of the droplet perimeter. Magnetic droplet nucleation is found to be robust and reproducible over a wide number of NC-STOs with different NC sizes, making this new nanomagnetic object as fundamental and potentially useful to nanomagnetism as e.g. domain walls and vortices. Support

  8. Generation and detection of spin polarization in parallel coupled double quantum dots connected to four terminals

    International Nuclear Information System (INIS)

    An, Xing-Tao; Mu, Hui-Ying; Li, Yu-Xian; Liu, Jian-Jun

    2011-01-01

    A four-terminal parallel double quantum dots (QDs) device is proposed to generate and detect the spin polarization in QDs. It is found that the spin accumulation in QDs and the spin-polarized currents in the upper and down leads can be generated when a bias voltage is applied between the left and right leads. It is more interesting that the spin polarization in the QDs can be detected using the upper and down leads. Moreover, the direction and magnitude of the spin polarization in the QDs, and in the upper and down leads can be tuned by the energy levels of QDs and the bias. -- Highlights: → The spin polarization in the quantum dots can be generated and controlled. → The spin polarization in quantum dots can be detected by the nonferromagnetic leads. → The system our studied is a discrete level spin Hall system.

  9. Investigation of spin-polarized transport in GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tierney, B D; Day, T E; Goodnick, S M [Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706 (United States)], E-mail: brian.tierney@asu.edu

    2008-03-15

    A spin field effect transistor (spin-FET) has been fabricated that employs nanomagnets as components of quantum point contact (QPC) structures to inject spin-polarized carriers into the high-mobility two-dimensional electron gas (2DEG) of a GaAs quantum well and to detect them. A centrally-placed non-magnetic Rashba gate controls both the density of electrons in the 2DEG and the electronic spin precession. Initial results are presented for comparable device structures modeled with an ensemble Monte Carlo (EMC) method. In the EMC the temporal and spatial evolution of the ensemble carrier spin polarization is governed by a spin density matrix formalism that incorporates the Dresselhaus and Rashba contributions to the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures from 77-300K.

  10. Spin drift and spin diffusion currents in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

    2008-09-15

    On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

  11. Spin drift and spin diffusion currents in semiconductors

    Directory of Open Access Journals (Sweden)

    M Idrish Miah

    2008-01-01

    Full Text Available On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

  12. Spin drift and spin diffusion currents in semiconductors

    International Nuclear Information System (INIS)

    Idrish Miah, M

    2008-01-01

    On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

  13. Quantifying Spin Hall Angles from Spin Pumping : Experiments and Theory

    NARCIS (Netherlands)

    Mosendz, O.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

    2010-01-01

    Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating Ni80Fe20|normal metal (N) bilayers into a coplanar

  14. Compound nucleus effects in spin-spin cross sections

    International Nuclear Information System (INIS)

    Thompson, W.J.

    1976-01-01

    By comparison with recent data, it is shown that spin-spin cross sections for low-energy neutrons may be dominated by a simple compound-elastic level-density effect, independent of spin-spin terms in the nucleon-nucleus optical-model potential. (Auth.)

  15. Design of a spin-wave majority gate employing mode selection

    Energy Technology Data Exchange (ETDEWEB)

    Klingler, S., E-mail: klingler@physik.uni-kl.de; Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V. [Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern (Germany)

    2014-10-13

    The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

  16. Acoustic forcing of a liquid drop

    Science.gov (United States)

    Lyell, M. J.

    1992-01-01

    The development of systems such as acoustic levitation chambers will allow for the positioning and manipulation of material samples (drops) in a microgravity environment. This provides the capability for fundamental studies in droplet dynamics as well as containerless processing work. Such systems use acoustic radiation pressure forces to position or to further manipulate (e.g., oscillate) the sample. The primary objective was to determine the effect of a viscous acoustic field/tangential radiation pressure forcing on drop oscillations. To this end, the viscous acoustic field is determined. Modified (forced) hydrodynamic field equations which result from a consistent perturbation expansion scheme are solved. This is done in the separate cases of an unmodulated and a modulated acoustic field. The effect of the tangential radiation stress on the hydrodynamic field (drop oscillations) is found to manifest as a correction to the velocity field in a sublayer region near the drop/host interface. Moreover, the forcing due to the radiation pressure vector at the interface is modified by inclusion of tangential stresses.

  17. 49 CFR 178.965 - Drop test.

    Science.gov (United States)

    2010-10-01

    ... Large Packaging design types and performed periodically as specified in § 178.955(e) of this subpart. (b... § 178.960(d). (d) Test method. (1) Samples of all Large Packaging design types must be dropped onto a... be restored to the upright position for observation. (2) Large Packaging design types with a capacity...

  18. Predicting Students Drop Out: A Case Study

    Science.gov (United States)

    Dekker, Gerben W.; Pechenizkiy, Mykola; Vleeshouwers, Jan M.

    2009-01-01

    The monitoring and support of university freshmen is considered very important at many educational institutions. In this paper we describe the results of the educational data mining case study aimed at predicting the Electrical Engineering (EE) students drop out after the first semester of their studies or even before they enter the study program…

  19. Modeling merging behavior at lane drops.

    Science.gov (United States)

    2015-02-01

    In work-zone configurations where lane drops are present, merging of traffic at the taper presents an operational concern. In : addition, as flow through the work zone is reduced, the relative traffic safety of the work zone is also reduced. Improvin...

  20. Pressure drops in low pressure local boiling

    International Nuclear Information System (INIS)

    Courtaud, Michel; Schleisiek, Karl

    1969-01-01

    For prediction of flow reduction in nuclear research reactors, it was necessary to establish a correlation giving the pressure drop in subcooled boiling for rectangular channels. Measurements of pressure drop on rectangular channel 60 and 90 cm long and with a coolant gap of 1,8 and 3,6 mm were performed in the following range of parameters. -) 3 < pressure at the outlet < 11 bars abs; -) 25 < inlet temperature < 70 deg. C; -) 200 < heat flux < 700 W/cm 2 . It appeared that the usual parameter, relative length in subcooled boiling, was not sufficient to correlate experimental pressure losses on the subcooled boiling length and that there was a supplementary influence of pressure, heat flux and subcooling. With an a dimensional parameter including these terms a correlation was established with an error band of ±10%. With a computer code it was possible to derive the relation giving the overall pressure drop along the channel and to determine the local gradients of pressure drop. These local gradients were then correlated with the above parameter calculated in local conditions. 95 % of the experimental points were computed with an accuracy of ±10% with this correlation of gradients which can be used for non-uniform heated channels. (authors) [fr