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Sample records for spin-polarized slow positron

  1. Construction of the spin-polarized slow positron beam with the RI source

    Energy Technology Data Exchange (ETDEWEB)

    Nakajyo, Terunobu; Tashiro, Mutsumi; Kanazawa, Ikuzo [Tokyo Gakugei Univ., Koganei (Japan); Komori, Fumio; Murata, Yoshimasa; Ito, Yasuo

    1997-03-01

    The electrostatic slow-positron beam is constructed by using {sup 22}Na source. We design the electrostatic lens, the system of the detector, and the Wien filter for the experiment`s system of the spin-polarized slow positron beam. The reemitted spin-polarized slow-positron spectroscopy is proposed for studying magnetic thin films and magnetic multilayers. We calculated the depolarized positron fractions in the Fe thin film Fe(10nm)/Cu(substrate) and the multilayers Cu(1nm)/Fe(10nm)/Cu(substrate). (author)

  2. Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy

    Science.gov (United States)

    Maekawa, Masaki; Abe, Hiroshi; Miyashita, Atsumi; Sakai, Seiji; Yamamoto, Shunya; Kawasuso, Atsuo

    2017-04-01

    We investigated the ferromagnetism of ZnO induced by oxygen implantation by using spin-polarized positron annihilation spectroscopy together with magnetization measurements. The magnetization measurements showed the appearance of ferromagnetism after oxygen implantation and its disappearance during post-implantation annealing at temperatures above 573 K. The Doppler broadening of annihilation radiation (DBAR) spectrum showed asymmetry upon field reversal after oxygen implantation. The obtained differential DBAR spectrum between positive and negative magnetic fields was well-explained with a theoretical calculation considering zinc vacancies. The disappearance of the field-reversal asymmetry of the DBAR spectrum as a result of annealing agreed with the observations of ferromagnetism by magnetization measurements. These results suggest the radiation-induced zinc vacancies to be the source of the observed ferromagnetism of ZnO.

  3. PF slow positron source

    International Nuclear Information System (INIS)

    Shirakawa, A.; Enomoto, A.; Kurihara, T.

    1993-01-01

    A new slow-positron source is under construction at the Photon Factory. Positrons are produced by bombarding a tantalum rod with high-energy electrons; they are moderated in multiple tungsten vanes. We report here the present status of this project. (author)

  4. Proposal for a slow positron facility at Jefferson National Laboratory

    Science.gov (United States)

    Mills, Allen P.

    2018-05-01

    One goal of the JPos-17 International Workshop on Physics with Positrons was to ascertain whether it would be a good idea to expand the mission of the Thomas Jefferson National Accelerator Facility (JLab) to include science with low energy (i.e. "slow") spin polarized positrons. It is probably true that experimentation with slow positrons would potentially have wide-ranging benefits comparable to those obtained with neutron and x-ray scattering, but it is certain that the full range of these benefits will never be fully available without an infrastructure comparable to that of existing neutron and x-ray facilities. The role for Jefferson Laboratory would therefore be to provide and maintain (1) a dedicated set of machines for making and manipulating high intensity, high brightness beams of polarized slow positrons; (2) a suite of unique and easily used instruments of wide utility that will make efficient use of the positrons; and (3) a group of on-site positron scientists to provide scientific leadership, instrument development, and user support. In this note some examples will be given of the science that might make a serious investment in a positron facility worthwhile. At the same time, the lessons learned from various proposed and successful positron facilities will be presented for consideration.

  5. The cryogenic source of slow monochromatic positrons

    International Nuclear Information System (INIS)

    Meshkov, I.N.; Pavlov, V.N.; Sidorin, A.O.; Yakovenko, S.L.

    2008-01-01

    The cryogenic source of slow monochromatic positrons based on the 22 Na isotope has been designed and constructed at JINR. Positrons emitted from radioactive source 22 Na have a very broad energy spectrum up to 0.5 MeV. To generate monochromatic beam of slow positrons the solid neon is used as a moderator. The solid neon allows forming slow positron beam of the energy of 1.2 eV at the spectrum width of 1 eV. The efficiency of moderation is 1 % of total positron flux

  6. KEK-IMSS Slow Positron Facility

    Energy Technology Data Exchange (ETDEWEB)

    Hyodo, T; Wada, K; Yagishita, A; Kosuge, T; Saito, Y; Kurihara, T; Kikuchi, T; Shirakawa, A; Sanami, T; Ikeda, M; Ohsawa, S; Kakihara, K; Shidara, T, E-mail: toshio.hyodo@kek.jp [High Energy Accelerator Research Organization (KEK) 1-1 Oho, Tsukuba, Ibaraki, 305-0801 (Japan)

    2011-12-01

    The Slow Positron Facility at the Institute of Material Structure Science (IMSS) of High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy tunable (0.1 - 35 keV) slow positron beam produced by a dedicated 55MeV linac. The present beam line branches have been used for the positronium time-of-flight (Ps-TOF) measurements, the transmission positron microscope (TPM) and the photo-detachment of Ps negative ions (Ps{sup -}). During the year 2010, a reflection high-energy positron diffraction (RHEPD) measurement station is going to be installed. The slow positron generator (converter/ moderator) system will be modified to get a higher slow positron intensity, and a new user-friendly beam line power-supply control and vacuum monitoring system is being developed. Another plan for this year is the transfer of a {sup 22}Na-based slow positron beam from RIKEN. This machine will be used for the continuous slow positron beam applications and for the orientation training of those who are interested in beginning researches with a slow positron beam.

  7. Elastic scattering of slow positrons by helium

    International Nuclear Information System (INIS)

    Amusia, M.Ya.; Cherepkov, N.A.; Chernysheva, L.V.; Shapiro, S.G.

    1976-01-01

    The s-, p-, d- and f-wave phaseshifts for elastic scattering of slow positrons by He are calculated using a simplified version of the random phase approximation with exchange, with virtual positronium formation effect taken into account. (author)

  8. Polymeric membrane studied using slow positron beam

    International Nuclear Information System (INIS)

    Hung, W.-S.; Lo, C.-H.; Cheng, M.-L.; Chen Hongmin; Liu Guang; Chakka, Lakshmi; Nanda, D.; Tung, K.-L.; Huang, S.-H.; Lee, Kueir-Rarn; Lai, J.-Y.; Sun Yiming; Yu Changcheng; Zhang Renwu; Jean, Y.C.

    2008-01-01

    A radioisotope slow positron beam has been built at the Chung Yuan Christian University in Taiwan for the research and development in membrane science and technology. Doppler broadening energy spectra and positron annihilation lifetime have been measured as a function of positron energy up to 30 keV in a polyamide membrane prepared by the interfacial polymerization between triethylenetetraamine (TETA) and trimesoyl chloride (TMC) on modified porous polyacrylonitrile (PAN) asymmetric membrane. The multilayer structures and free-volume depth profile for this asymmetric membrane system are obtained. Positron annihilation spectroscopy coupled with a slow beam could provide new information about size selectivity of transporting molecules and guidance for molecular designs in polymeric membranes

  9. Slow positron applications at slow positron facility of institute of materials structure science, KEK

    Science.gov (United States)

    Hyodo, Toshio; Mochizuki, Izumi; Wada, Ken; Toge, Nobukazu; Shidara, Tetsuo

    2018-05-01

    Slow Positron Facility at High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy-tunable (0.1 - 35 keV) slow positron beam created by a dedicated ˜ 50 MeV linac. It operates in a short pulse (width 1-12 ns, variable, 5×106 e+/s) and a long pulse (width 1.2 µs, 5×107 e+/s) modes of 50 Hz. High energy positrons from pair creation are moderated by reemission after thermalization in W foils. The reemitted positrons are then electrostatically accelerated to a desired energy up to 35 keV and magnetically transported. A pulse-stretching section (pulse stretcher) is installed in the middle of the beamline. It stretches the slow positron pulse for the experiments where too many positrons annihilating in the sample at the same time has to be avoided. Four experiment stations for TRHEPD (total-reflection high-energy positron diffraction), LEPD (low-energy positron diffraction), Ps- (positronium negative ion), and Ps-TOF (positronium time-of-flight) experiments are connected to the beamline branches, SPF-A3, SPF-A4, SPF-B1 and SPF-B2, respectively. Recent results of these stations are briefly described.

  10. When measured spin polarization is not spin polarization

    International Nuclear Information System (INIS)

    Dowben, P A; Wu Ning; Binek, Christian

    2011-01-01

    Spin polarization is an unusually ambiguous scientific idiom and, as such, is rarely well defined. A given experimental methodology may allow one to quantify a spin polarization but only in its particular context. As one might expect, these ambiguities sometimes give rise to inappropriate interpretations when comparing the spin polarizations determined through different methods. The spin polarization of CrO 2 and Cr 2 O 3 illustrate some of the complications which hinders comparisons of spin polarization values. (viewpoint)

  11. Construction report of the PF slow-positron source. 1

    International Nuclear Information System (INIS)

    Enomoto, Atsushi; Kurihara, Toshikazu; Kobayashi, Hitoshi

    1993-12-01

    The slow positron source utilizing the electron beam of the 2.5 GeV electron beam accelerator which is the synchrotron radiation injector is being constructed. The outline of the project and the present state of construction are reported. As of November, 1993, by injecting the electron beam of about 10 W to the targets for producing positrons, the slow positrons of 4 x 10 4 e + /s has been obtained in the laboratory. Finally, with the electron beam of 30 kW, it is aimed at to obtain the slow positron beam of 2 x 10 9 e + /s. In the slow positron source, the electron beam from the 2.5 GeV linear accelerator is used as the primary beam. This beam is led to the target with electromagnets. Radiation shields were strengthened, and the electrostatic lens system was attached to efficiently extract and send out slow positrons. The conveying system for slow positrons is explained. Primary electron beam, target and moderator for producing slow positrons, the change to continuous current of pulsed slow positron beam and the heightening of luminance of slow positron beam, and the experiment on the utilization of slow positron beam, and the control system for positron conveyance path are reported. (K.I.)

  12. Spin-polarized photoemission

    International Nuclear Information System (INIS)

    Johnson, Peter D.

    1997-01-01

    Spin-polarized photoemission has developed into a versatile tool for the study of surface and thin film magnetism. In this review, we examine the methodology of the technique and its application to a number of different problems, including both valence band and core level studies. After a detailed review of spin-polarization measurement techniques and the related experimental requirements we consider in detail studies of the bulk properties both above and below the Curie temperature. This section also includes a discussion of observations relating to unique metastable phases obtained via epitaxial growth. The application of the technique to the study of surfaces, both clean and adsorbate covered, is reviewed. The report then examines, in detail, studies of the spin-polarized electronic structure of thin films and the related interfacial magnetism. Finally, observations of spin-polarized quantum well states in non-magnetic thin films are discussed with particular reference to their mediation of the oscillatory exchange coupling in related magnetic multilayers. (author)

  13. A new slow positron beam facility using a compact cyclotron

    International Nuclear Information System (INIS)

    Hirose, Masafumi

    1998-01-01

    In 1993, Sumitomo Heavy Industries became the first in the world to successfully produce a slow positron beam using a compact cyclotron. Slow positron beam production using an accelerator had mainly consisted of using an electron linear accelerator (LINAC). However, the newly developed system that uses a compact cyclotron enabled cost reduction, downsizing of equipment, production of a DC slow positron beam, a polarized slow positron beam, and other benefits. After that, a genuine slow positron beam facility was developed with the construction of compact cyclotron No.2, and beam production in the new facility has already been started. The features of this new slow positron beam facility are explained below. 1) It is the world's first compact slow positron beam facility using a compact cyclotron. 2) It is the only genuine slow positron beam facility in the world which incorporates the production and use of a slow positron beam in the design stage of the cyclotron. To use a slow positron beam for non-destructive detection of lattice defects in semiconductor material, it is necessary to convert the beam into ultra-short pulses of several hundreds of pico-seconds. Sumitomo Heavy Industries has devised a new short-pulsing method (i.e. an induction bunching method) that enables the conversion of a slow positron beam into short pulses with an optimum pulsing electric field change, and succeeded in converting a slow positron beam into short pulses using this method for the first time in the world. Non-destructive detection of lattice defects in semiconductor material using this equipment has already been started, and some information about the depth distribution, size, density, etc. of lattice defects has already been obtained. (J.P.N.)

  14. Techniques for slow positron beam generation and the applications

    International Nuclear Information System (INIS)

    Okada, Sohei

    1994-01-01

    Slow positron beams have been expected to be a powerful tool for observation of nature in wide range of research fields from materials science to basic physics, chemistry and biology. In this paper, at first, the beam technology is reviewed, which includes the positron generation, the transformation to slow positron beams and the beam manipulation such as beam stretching, bunching and brightness enhancement. Next, the present status of the slow positron beam applications to a variety of fields is demonstrated in terms of special characteristics of positron, that is, depth controllability, surface sensitivity, unique ionization channels and elemental anti-particle properties. Finally, prospects to produce intense slow positron beams are described. (author) 65 refs

  15. Investigation and realization of a slow-positron beam

    International Nuclear Information System (INIS)

    Ruiz, Nicolas

    2011-01-01

    This research thesis first proposes a presentation of the GBAR project (Gravitational Behaviour of Anti-hydrogen at Rest) within which this research took place, and which aims at performing the first direct test of the Weak Equivalence Principle on anti-matter by studying the free fall of anti-hydrogen atoms in the Earth gravitational field. The author presents different aspects of this project: scientific objective, experiment principle and structure, detailed structure (positron beam, positron trap, positron/positronium conversion, anti-proton beam, trapping, slowing down and neutralisation of anti-hydrogen ions). The author then reports the design of the positron beam: study of source technology, studies related to the fast positron source, design of the low positron line (approach, functions, simulations, technology). The two last chapters report the construction and the characterization of the slow-positron line [fr

  16. Spin-polarized SEM

    International Nuclear Information System (INIS)

    Konoto, Makoto

    2007-01-01

    Development of highly effective evaluation technology of magnetic structures on a nanometric scale is a key to understanding spintronics and related phenomena. A high-resolution spin-polarized scanning electron microscope (spin SEM) developed recently is quite suitable for probing such nanostructures because of the capability of analyzing local magnetization vectors in three dimensions. Utilizing the spin SEM, a layered antiferromagnetic structure with the 1nm-alternation of bilayer-sheet magnetization has been successfully resolved. The real-space imaging with full analysis of the temperature-dependent magnetization vectors will be demonstrated. (author)

  17. Development of slow positron beam lines and applications

    Science.gov (United States)

    Mondal, Nagendra Nath

    2018-05-01

    A positron is an antiparticle of an electron that can be formed in diverse methods: natural or artificial β-decay process, fission and fusion reactions, and a pair production of electron-positron occurred in the reactor and the high energy accelerator centers. Usually a long-lifetime radio isotope is customized for the construction of a slow positron beam lines in many laboratories. The typical intensity of this beam depends upon the strength of the positron source, moderator efficiency, and guiding, pulsing, focusing and detecting systems. This article will review a few positron beam lines and their potential applications in research, especially in the Positronium Bose-Einstein Condensation.

  18. Generation of slow positron beam and beam bunching

    International Nuclear Information System (INIS)

    Azuma, O.; Satoh, T.; Shitoh, M.; Kaneko, N.; Kawaratani, T.; Hara, O.

    1994-01-01

    Two items are described in this report. One is about the outline of our slow positron beam system, which has been fabricated as a commercial prototype. The other is about the calculation result of positron beam bunching, which will be an additional function to the system. (author)

  19. Spin polarized deuterium

    International Nuclear Information System (INIS)

    Glyde, H.R.; Hernadi, S.I.

    1986-01-01

    Several ground state properties of (electron) spin-polarized deuterium (D) such as the energy, single quasiparticle energies and lifetimes, Landau parameters and sound velocities are evaluated. The calculations begin with the Kolos-Wolneiwicz potential and use the Galitskii-FeynmanHartree-Fock (GFHF) approximation. The deuteron nucleas has spin I = 1, and spin states I/sub z/ = 1,0,-1. We explore D 1 , D 2 and D 3 in which, respectively, one spin state only is populated, two states are equally populated, and three states are equally populated. We find the GFHF describes D 1 well, but D 2 and D 3 less well. The Landau parameters, F/sub L/, are small compared to liquid 3 He and very small for doubly polarized D 1 (i.e. the F/sub L/ decrease with nuclear polarization)

  20. Dynamic nuclear spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Stuhrmann, H B [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

    1996-11-01

    Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

  1. Spin polarization of graphene and h -BN on Co(0001) and Ni(111) observed by spin-polarized surface positronium spectroscopy

    Science.gov (United States)

    Miyashita, A.; Maekawa, M.; Wada, K.; Kawasuso, A.; Watanabe, T.; Entani, S.; Sakai, S.

    2018-05-01

    In spin-polarized surface positronium annihilation measurements, the spin polarizations of graphene and h -BN on Co(0001) were higher than those on Ni(111), while no significant differences were seen between graphene and h -BN on the same metal. The obtained spin polarizations agreed with those expected from first-principles calculations considering the positron wave function and the electron density of states from the first surface layer to the vacuum region. The higher spin polarizations of graphene and h -BN on Co(0001) as compared to Ni(111) simply reflect the spin polarizations of these metals. The comparable spin polarizations of graphene and h -BN on the same metal are attributed to the creation of similar electronic states due to the strong influence of the metals: the Dirac cone of graphene and the band gap of h -BN disappear as a consequence of d -π hybridization.

  2. The proposed INEL intense slow positron source, beam line, and positron microscope facility

    International Nuclear Information System (INIS)

    Makowitz, H.; Denison, A.B.; Brown, B.

    1993-01-01

    A program is currently underway at the Idaho National Engineering Laboratory (INEL) to design and construct an Intense Slow Positron Beam Facility with an associated Positron Microscope. Positron beams have been shown to be valuable research tools and have potential application in industrial processing and nondestructive evaluation (microelectronics, etc.). The limit of resolution or overall usefulness of the technique has been limited because of lack of sufficient intensity. The goal of the INEL positron beam is ≥ 10 12 slow e+/s over a 0.03 cm diameter which represents a 10 3 to 10 4 advancement in beam current over existing beam facilities. The INEL is an ideal site for such a facility because of the nuclear reactors capable of producing intense positron sources and the personnel and facilities capable of handling high levels of radioactivity. A design using 58 Co with moderators and remoderators in conjunction with electrostatic positron beam optics has been reached after numerous computer code studies. Proof-of-principle electron tests have demonstrated the feasibility of the large area source focusing optics. The positron microscope development is occurring in conjunction with the University of Michigan positron microscope group. Such a Beam Facility and associated Intense Slow Positron Source (ISPS) can also be utilized for the generation and study of positron, and positron electron plasmas at ≤ 10 14 particles/cm 3 with plasma temperatures ranging from an eV to many keV, as well as an intense x-ray source via positron channeling radiation. The possibility of a tunable x-ray laser based on channeling positron radiation also exists. In this discussion the authors will present a progress report on various activities associated with the INEL ISPS

  3. Applications of slow positrons to cancer research: Search for selectivity of positron annihilation to skin cancer

    International Nuclear Information System (INIS)

    Jean, Y.C.; Li Ying; Liu Gaung; Chen, Hongmin; Zhang Junjie; Gadzia, Joseph E.

    2006-01-01

    Slow positrons and positron annihilation spectroscopy (PAS) have been applied to medical research in searching for positron annihilation selectivity to cancer cells. We report the results of positron lifetime and Doppler broadening energy spectroscopies in human skin samples with and without cancer as a function of positron incident energy (up to 8 μm depth) and found that the positronium annihilates at a significantly lower rate and forms at a lower probability in the samples having either basal cell carcinoma (BCC) or squamous cell carcinoma (SCC) than in the normal skin. The significant selectivity of positron annihilation to skin cancer may open a new research area of developing positron annihilation spectroscopy as a novel medical tool to detect cancer formation externally and non-invasively at the early stages

  4. Applications of slow positrons to cancer research: Search for selectivity of positron annihilation to skin cancer

    Energy Technology Data Exchange (ETDEWEB)

    Jean, Y.C. [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States)]. E-mail: jeany@umkc.edu; Li Ying [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Liu Gaung [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Chen, Hongmin [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Zhang Junjie [Department of Chemistry, University of Missouri-Kansas City, 205 Spenscer Chemistry Building, 5009 Rockhill Road, Kansas City, MO 64110 (United States); Gadzia, Joseph E. [Dermatology, Department of Internal Medicine, University of Kansas Medical Center, Kansas City, KS 66103 (United States); Kansas Medical Clinic, Topeka, KS 66614 (United States)

    2006-02-28

    Slow positrons and positron annihilation spectroscopy (PAS) have been applied to medical research in searching for positron annihilation selectivity to cancer cells. We report the results of positron lifetime and Doppler broadening energy spectroscopies in human skin samples with and without cancer as a function of positron incident energy (up to 8 {mu}m depth) and found that the positronium annihilates at a significantly lower rate and forms at a lower probability in the samples having either basal cell carcinoma (BCC) or squamous cell carcinoma (SCC) than in the normal skin. The significant selectivity of positron annihilation to skin cancer may open a new research area of developing positron annihilation spectroscopy as a novel medical tool to detect cancer formation externally and non-invasively at the early stages.

  5. Generation and application of slow positrons based on a electron LINAC

    International Nuclear Information System (INIS)

    Kurihara, Toshikazu

    2002-01-01

    History of slow positron in Institute of Materials Structure Science High Energy Accelerator Research Organization is explained. The principle of generation and application of intense positron beam is mentioned. Two sources of intense positron are radioactive decay of radioactive isotopes emitting positron and electron-positron pair creation. The radioactive decay method uses 58 Co, 64 Cu, 11 C, 13 N, 15 O and 18 F. The electron-positron pair creation method uses nuclear reactor or electron linear accelerator (LINAC). The positron experimental facility in this organization consists of electron LINAC, slow positron beam source, positron transport and experimental station. The outline of this facility is started. The intense slow positron beam is applied to research positronium work function, electron structure of surface. New method such as combination of positron lifetime measurement and slow positron beam or Auger electron spectroscopy by positron annihilation excitation and positron reemission microscope are developed. (S.Y.)

  6. Proposal for an intense slow positron beam facility at PSI

    International Nuclear Information System (INIS)

    Waeber, W.B.; Taqqu, D.; Zimmermann, U.; Solt, G.

    1990-05-01

    In the domain of condensed matter physics and materials sciences monoenergetic slow positrons in the form of highest intensity beams are demonstrated to be extreamly useful and considered to be highly needed. This conclusion has been reached and the scientific relevance of the positron probe has been highlighted at an international workshop in November 1989 at PSI, where the state of the art and the international situation on slow positron beams, the fields of application of intense beams and the technical possibilities at PSI for installing intense positron sources have been evaluated. The participants agreed that a high intensity beam as a large-scale user facility at PSI would serve fundamental and applied research. The analysis of responses given by numerous members of a widespread positron community has revealed a large research potential in the domain of solid-state physics, atomic physics and surface, thin-film and defect physics, for example. The excellent feature of slow positron beams to be a suitable probe also for lattice defects near surfaces or interfaces has attracted the interest not only of science but also of industry.In this report we propose the installation of an intense slow positron beam facility at PSI including various beam lines of different qualities and based on the Cyclotron production of β + emitting source material and on a highest efficiency moderation scheme which exceeds standard moderation efficiencies by two orders of magnitude. In its proposed form, the project is estimated to be realizable in the nineties and costs will amount to between 15 and 20 MSFr. (author) 10 figs., 6 tabs., 78 refs

  7. Generation and application of slow positrons based on a electron LINAC

    CERN Document Server

    Kurihara, T

    2002-01-01

    History of slow positron in Institute of Materials Structure Science High Energy Accelerator Research Organization is explained. The principle of generation and application of intense positron beam is mentioned. Two sources of intense positron are radioactive decay of radioactive isotopes emitting positron and electron-positron pair creation. The radioactive decay method uses sup 5 sup 8 Co, sup 6 sup 4 Cu, sup 1 sup 1 C, sup 1 sup 3 N, sup 1 sup 5 O and sup 1 sup 8 F. The electron-positron pair creation method uses nuclear reactor or electron linear accelerator (LINAC). The positron experimental facility in this organization consists of electron LINAC, slow positron beam source, positron transport and experimental station. The outline of this facility is started. The intense slow positron beam is applied to research positronium work function, electron structure of surface. New method such as combination of positron lifetime measurement and slow positron beam or Auger electron spectroscopy by positron annihil...

  8. Probing the positron moderation process using high-intensity, highly polarized slow-positron beams

    Science.gov (United States)

    Van House, J.; Zitzewitz, P. W.

    1984-01-01

    A highly polarized (P = 0.48 + or - 0.02) intense (500,000/sec) beam of 'slow' (Delta E = about 2 eV) positrons (e+) is generated, and it is shown that it is possible to achieve polarization as high as P = 0.69 + or - 0.04 with reduced intensity. The measured polarization of the slow e+ emitted by five different positron moderators showed no dependence on the moderator atomic number (Z). It is concluded that only source positrons with final kinetic energy below 17 keV contribute to the slow-e+ beam, in disagreement with recent yield functions derived from low-energy measurements. Measurements of polarization and yield with absorbers of different Z between the source and moderator show the effects of the energy and angular distributions of the source positrons on P. The depolarization of fast e+ transmitted through high-Z absorbers has been measured. Applications of polarized slow-e+ beams are discussed.

  9. Investigation of positron moderator materials for electron-linac-based slow positron beamlines

    International Nuclear Information System (INIS)

    Suzuki, Ryoichi; Ohdaira, Toshiyuki; Uedono, Akira

    1998-01-01

    Positron re-emission properties were studied on moderator materials in order to improve the positron moderation system of electron-linac-based intense slow positron beamlines. The re-emitted positron fraction was measured on tungsten, SiC, GaN, SrTiO 3 , and hydrogen-terminated Si with a variable-energy pulsed positron beam. The results suggested that tungsten is the best material for the primary moderator of the positron beamlines while epitaxially grown n-type 6H-SiC is the best material for the secondary moderator. Defect characterization by monoenergetic positron beams and surface characterization by Auger electron spectroscopy were carried out to clarify the mechanism of tungsten moderator degradation induced by high-energy electron irradiation. The characterization experiments revealed that the degradation is due to both radiation-induced vacancy clusters and surface carbon impurities. For the restoration of degraded tungsten moderators, oxygen treatment at ∼900degC is effective. Furthermore, it was found that oxygen at the tungsten surface inhibits positronium formation; as a result, it can increase the positron re-emission fraction. (author)

  10. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  11. Production of slow positron beam with small diameter using electron linac in Osaka University

    Energy Technology Data Exchange (ETDEWEB)

    Honda, Yoshihide; Sawada, Junichi; Yamada, Masaki; Maekawa, Masaki; Okuda, Shuichi; Yoshida, Yoichi; Isoyama, Goro; Tagawa, Seiichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Yamamoto, Takayoshi

    1997-03-01

    A slow positron facility using an electron linac was designed and constructed. The specifications were mainly decided by numerical calculations. The slow positrons are transported along magnetic field line. The cross sectional size of slow positron beam is 1-2cm and the maximum conversion rate from electron to positron is about 1.5 x 10{sup -6}. This value is about 1/4 of ideal case in our system. Extraction of slow positron beam from magnetic field region was made and preliminary brightness enhancement experiment was also performed. (author)

  12. A low-neutron background slow-positron source

    International Nuclear Information System (INIS)

    White, M. M.

    1998-01-01

    The addition of a thermionic rf gun [1] and a photocathode rf gun will allow the Advanced Photon Source (APS) linear accelerator (linac) [2] [3] to become a free-electron laser (FEL) driver [4]. As the FEL project progresses, the existing high-charge DC thermionic gun will no longer be critical to APS operation and could be used to generate high-energy or low-energy electrons to drive a slow-positron source. We investigated possibilities to create a useful low-energy source that could operate semi-independently and would have a low neutron background

  13. The generation and development of the moderators for slow positron beam

    International Nuclear Information System (INIS)

    Yu Weizhong; Yuan Jiaping

    2001-01-01

    The positron annihilation technique is a sensitive tool for studying microdefects and phase transitions in various materials. Usually the energy of positrons is on the order of MeV and the implantation depth about 100 microns, so the bulk average defect density can be studied. In a slow positron beam the positron energy is about keV and the implantation depth a few microns, so surface defects can be detected. Positron moderator is the key device for obtaining a slow positron beam. The authors review the history and development of the positron moderator, including four methods that convert fast positrons into slow mono-energetic positrons and five array types. The tungsten moderator is the most widely used one while the inert gas solid moderator is the most efficient. Field-enhanced moderators with their high efficiency have great potential but need to be developed. The vane arrangement is the most commonly found

  14. Concepts for a slow-positron target at the advanced photon source

    International Nuclear Information System (INIS)

    Lessner, E.; White, M.

    1997-01-01

    The Advanced Photon Source (APS) linear accelerator beam could be used to produce slow positrons during the hours between the storage ring injection cycles. Initial concepts for the design of a target that is optimized for slow-positron production are discussed, and simulation results are presented. Some possible ways to increase the nominal linac beam power for improved slow-positron production are also discussed

  15. Nuclear spin polarization of targets

    International Nuclear Information System (INIS)

    Happer, W.

    1990-01-01

    Lasers can be used to produce milligrams to grams of noble gas nuclei with spin polarizations in excess of 50%. These quantities are sufficient to be very useful targets in nuclear physics experiments. Alkali-metal atoms are used to capture the angular momentum of circularly polarized laser photons, and the alkali-metal atoms transfer their angular momentum to noble gas atoms in binary or three-body collisions. Non-radiative collisions between the excited alkali atoms and molecular quenching gases are essential to avoid radiation trapping. The spin exchange can involve gas-phase van der Waals molecules, consisting of a noble gas atom and an alkali metal atom. Surface chemistry is also of great importance in determining the wall-induced relaxation rates of the noble gases

  16. Recent progress in annihilation related studies by slow positrons

    International Nuclear Information System (INIS)

    Lynn, K.G.

    1989-01-01

    The field of slow-positron physics has expanded significantly in the last few years to include particles and atomic physics but has been most extensive in those associated with condensed matter or material science. This can primarily be attributed to the development of more efficient moderators. These moderators have been associated with both laboratory- and facility-based beams. In this paper I will focus only on the material-science aspects however. Positron can and are being used to examine all of the various fields. I feel the contribution in all these areas will be significant. I will primarily discuss those developments that have been developed in the area of interface science; a field that has both scientific and technological importance and has a limited number of nondestructive probes used in studying a buried interface. Interfaces are technologically important for applications such as electrical properties and mechanical properties. Such applications help to motivate the fundamental research of interface properties and dynamics, which is necessary to develop the basic understanding of new types of interfaces. The role of the interface is also important since it limited length of this paper. Results will be presented in interface studies that have occurred in the last year, including some unpublished results obtained at Brookhaven over the past few months. This field is in the early stages and I expect that the full utilization of this relatively new probe can be anticipated in the next few years. 17 refs., 7 figs

  17. Spontaneous spin polarization in quantum wires

    Energy Technology Data Exchange (ETDEWEB)

    Vasilchenko, A.A., E-mail: a_vas2002@mail.ru

    2015-12-04

    The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.

  18. Spontaneous spin polarization in quantum wires

    International Nuclear Information System (INIS)

    Vasilchenko, A.A.

    2015-01-01

    The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.

  19. PREFACE 12th International Workshop on Slow Positron Beam Techniques

    Science.gov (United States)

    Buckman, Stephen; Sullivan, James; White, Ronald

    2011-01-01

    Preface These proceedings arose from the 12th International Workshop on Slow Positron Beam Techniques (SLOPOS12), which was held on Magnetic Island, North Queensland, Australia, between 1-6th August 2010. Meetings in the SLOPOS series are held (roughly) every three years and have now been held on (almost) all continents, indicating the truly international nature of the field. SLOPOS12 marked the second time that the Workshop had been held in the southern hemisphere, and the first time in Australia. SLOPOS12 attracted 122 delegates from 16 countries. Most encouraging was the attendance of 28 student delegates, and that about half of the overall delegates were early career researchers - a good sign for the future of our field. We also enjoyed the company of more than a dozen partners and families of delegates. In a slight departure from previous SLOPOS meetings, the International Advisory Committee approved a broader scope of scientific topics for inclusion in the program for the 2010 Workshop. This broader scope was intended to capture the applications of positrons in atomic, molecular and biomedical areas and was encapsulated in the byeline for SLOPOS-12: The 12th International Workshop on Slow Positron Beam Techniques for Solids, Surfaces, Atoms and Molecules. The scientific and social program for the meeting ran over 6 days with delegates gathering on Sunday August 1st and departing on August 6th. The scientific program included plenary, invited, contributed and student lectures, the latter being the subject of a student prize. In all there were 53 oral presentations during the week. There were also two poster sessions, with 63 posters exhibited, and a prize was awarded for the best poster by a student delegate. The standard of the student presentations, both oral and posters, was outstanding, so much so that the judging panel recommended an additional number of prizes be awarded. Topics that were the focus of invited presentations and contributed papers at

  20. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  1. Production of slow-positron beams with an electron linac

    International Nuclear Information System (INIS)

    Howell, R.H.; Alvarez, R.A.; Stanek, M.

    1982-01-01

    Intense, pulsed beams of low-energy positrons have been produced by a high-energy beam from an electron linac. The production efficiency for low-energy positrons has been determined for electrons with 60 to 120 MeV energy, low-energy positron beams from a linac can be of much higher intensity than those beams currently derived from radioactive sources

  2. Production and application of pulsed slow-positron beam using an electron LINAC

    Energy Technology Data Exchange (ETDEWEB)

    Yamazaki, Tetsuo; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Kobayashi, Yoshinori

    1997-03-01

    Slow-positron beam is quite useful for non-destructive material research. At the Electrotechnical Laboratory (ETL), an intense slow positron beam line by exploiting an electron linac has been constructed in order to carry out various experiments on material analysis. The beam line can generates pulsed positron beams of variable energy and of variable pulse period. Many experiments have been carried out so far with the beam line. In this paper, various capability of the intense pulsed positron beam is presented, based on the experience at the ETL, and the prospect for the future is discussed. (author)

  3. Spin-polarized scanning electron microscopy

    International Nuclear Information System (INIS)

    Kohashi, Teruo

    2014-01-01

    Spin-Polarized Scanning Electron Microscopy (Spin SEM) is one way for observing magnetic domain structures taking advantage of the spin polarization of the secondary electrons emitted from a ferromagnetic sample. This principle brings us several excellent capabilities such as high-spatial resolution better than 10 nm, and analysis of magnetization direction in three dimensions. In this paper, the principle and the structure of the spin SEM is briefly introduced, and some examples of the spin SEM measurements are shown. (author)

  4. Relevance of slow positron beam research to astrophysical studies of positron interactions and annihilation in the interstellar medium

    International Nuclear Information System (INIS)

    Guessoum, N.; Jean, P.; Gillard, W.

    2006-01-01

    The processes undergone by positrons in the interstellar medium (ISM) from the moments of their birth to their annihilation are examined. Both the physics of the positron interactions with gases and solids (dust grains), and the physical conditions and characteristics of the environments where the processes of energy loss, positronium formation, and annihilation taking place, are reviewed. An explanation is given as to how all the relevant physical information are taken into account in order to calculate annihilation rates and spectra of the 511 keV emission for the various phases of the ISM; special attention is paid to positron interactions with dust and with polycyclic aromatic hydrocarbons. An attempt is made to show to what extent the interactions between positrons and interstellar dust grains are similar to laboratory experiments in which beams of slow positrons impinge upon solids and surfaces. Sample results are shown for the effect of dust grains on positron annihilation spectra in some phases of the ISM which, together with high resolution spectra measured by satellites, can be used to infer useful knowledge about the environment where the annihilation is predominantly taking place and ultimately about the birth place and history of positrons in the Galaxy. The important complementarity between work done by the astrophysical and the solid-state positron communities is strongly emphasized and specific experimental work is suggested which could assist the modeling of the interaction and annihilation of positrons in the ISM

  5. Relevance of slow positron beam research to astrophysical studies of positron interactions and annihilation in the interstellar medium

    Energy Technology Data Exchange (ETDEWEB)

    Guessoum, N. [American University of Sharjah, Physics Department, P.O. Box 26666, Sharjah (United Arab Emirates)]. E-mail: nguessoum@aus.ac.ae; Jean, P. [Centre d' Etude Spatiale des Rayonnements, Toulouse (France); Gillard, W. [Centre d' Etude Spatiale des Rayonnements, Toulouse (France)

    2006-02-28

    The processes undergone by positrons in the interstellar medium (ISM) from the moments of their birth to their annihilation are examined. Both the physics of the positron interactions with gases and solids (dust grains), and the physical conditions and characteristics of the environments where the processes of energy loss, positronium formation, and annihilation taking place, are reviewed. An explanation is given as to how all the relevant physical information are taken into account in order to calculate annihilation rates and spectra of the 511 keV emission for the various phases of the ISM; special attention is paid to positron interactions with dust and with polycyclic aromatic hydrocarbons. An attempt is made to show to what extent the interactions between positrons and interstellar dust grains are similar to laboratory experiments in which beams of slow positrons impinge upon solids and surfaces. Sample results are shown for the effect of dust grains on positron annihilation spectra in some phases of the ISM which, together with high resolution spectra measured by satellites, can be used to infer useful knowledge about the environment where the annihilation is predominantly taking place and ultimately about the birth place and history of positrons in the Galaxy. The important complementarity between work done by the astrophysical and the solid-state positron communities is strongly emphasized and specific experimental work is suggested which could assist the modeling of the interaction and annihilation of positrons in the ISM.

  6. Current status and future view of generation of slow positrons and applications of available antiparticles

    International Nuclear Information System (INIS)

    Tomimasu, T.

    1988-01-01

    The positron is the antielectron and annihilates with an electron from the surrounding medium dominantly into two 511 keV γ-rays. The two annihilation γ-rays are modified by the momentum and energy distributions of the electrons in the annihilation site. The annihilation rates are proportional to the electron density in the site. Therefore, the two annihilation γ-rays and the average lifetime of positrons can provide unique informations on a wide variety of problems in condensed matter physics. Slow positrons with narrow energy spread are more useful, compared with white positrons from radioactive isotopes, to the positron annihilation experiment, the low energy positron diffraction, the positron microscope and so on. This review describes the current status and future view on (1) the applications of the positron annihilation to the condensed matter physics, (2) the generation of slow positrons using electron linacs, (3) the positron beam handling system including the pulse stretcher with a Penning trap and (4) the applications of available antiparticles including monoenergetic positrons, muons, pions and antiprotons to the analysis and evaluation of materials, the energy storage and positronium radiations. (author)

  7. Design of an efficient pulsing system for a slow-positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Nagayasu; Suzuki, Takenori [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan); Kanazawa, Ikuzo; Ito, Yasuo

    1996-07-01

    In this paper, a new design of a pulsed slow positron system for PALS measurement is reported. By using this new system, it will be possible to obtain a short-pulsed slow-positron beam with high efficiency ({>=}50%) and a relatively low minimum energy ({approx}200 eV). This system is also easy to construct on the laboratory scale. (J.P.N.)

  8. Ion-irradiated polymer studied by a slow positron beam

    International Nuclear Information System (INIS)

    Kobayashi, Yoshinori; Kojima, Isao; Hishita, Shunichi; Suzuki, Takenori.

    1995-01-01

    Poly (aryl-ether-ether ketone) (PEEK) films were irradiated with 1MeV and 2MeV 0 + ions and the positron annihilation Doppler broadening was measured as a function of the positron energy. The annihilation lines recorded at relatively low positron energies were found to become broader with increasing the irradiation dose, suggesting that positronium (Ps) formation may be inhibited in the damaged regions. A correlation was observed between the Doppler broadening and spin densities determined by electron spin resonance (ESR). (author)

  9. Versatile spin-polarized electron source

    Science.gov (United States)

    Jozwiak, Chris; Park, Cheol -Hwan; Gotlieb, Kenneth; Louie, Steven G.; Hussain, Zahid; Lanzara, Alessandra

    2015-09-22

    One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.

  10. Optical pumping production of spin polarized hydrogen

    International Nuclear Information System (INIS)

    Knize, R.J.; Happer, W.; Cecchi, J.L.

    1984-01-01

    There has been much interest recently in the production of large quantities of spin polarized hydrogen in various fields including controlled fusion, quantum fluids, high energy, and nuclear physics. One promising method for the development of large quantities of spin polarized hydrogen is the utilization of optical pumping with a laser. Optical pumping is a process where photon angular momentum is converted into electron and nuclear spin. The advent of tunable CW dye lasers (approx. 1 watt) allow the production of greater than 10 18 polarized atoms/sec. We have begun a program at Princeton to investigate the physics and technology of using optical pumping to produce large quantities of spin polarized hydrogen. Initial experiments have been done in small closed glass cells. Eventually, a flowing system, open target, or polarized ion source could be constructed

  11. Spin-polarized fuel in ICF pellets

    International Nuclear Information System (INIS)

    Wakuta, Yoshihisa; Emoto, Nobuya; Nakao, Yasuyuki; Honda, Takuro; Honda, Yoshinori; Nakashima, Hideki.

    1990-01-01

    The use of parallel spin-polarized DT or D 3 He fuel increases the fusion cross-section by 50%. By implosion-burn simulation for inertially confined fusion (ICF) pellets of the spin-polarized fuels, we found that the input energy requirement could be reduced by nearly a fact of two. These pellets taken up here include large-high-aspect-ratio DT target proposed in ILE Osaka University and DT ignitor/D 3 He fuel pellet proposed by our group. We also found that the polarized state could survive during the implosion-burn phase. (author)

  12. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  13. Slow positron beam production by a 14 MeV C.W. electron accelerator

    Science.gov (United States)

    Begemann, M.; Gräff, G.; Herminghaus, H.; Kalinowsky, H.; Ley, R.

    1982-10-01

    A 14 MeV c.w. electron accelerator is used for pair production in a tungsten target of 0.7 radiation lengths thickness. A small fraction of the positrons is thermalized and diffuses out of the surface ofsurface of a well annealed tungsten foil coated with MgO which is positioned immediately behind the target. The slow positrons are extracted from the target region and magnetically guided over a distance of 10 m onto a channelplate multiplier at the end of an S-shaped solenoid. The positrons are identified by their annihilation radiation using two NaI-detectors. The intensity of the slow positrons is proportional to the accelerator electron beam current. The maximum intensity of 2.2 × 10 5 slow positrons per second reaching thedetector at an accelerator current of 15 μA was limited by the power deposited in the uncooled target. The energy of the positrons is concentrated in a small region at about 1 eV and clearly demonstrates the emission of thermal positrons.

  14. Slow positron beam production by a 14 MeV c.w. electron accelerator

    International Nuclear Information System (INIS)

    Begemann, M.; Graeff, G.; Herminghaus, H.; Kalinowsky, H.; Ley, R.

    1982-01-01

    A 14 MeV c.w. electron accelerator is used for pair production in a tungsten target of 0.7 radiation lengths thickness. A small fraction of the positrons is thermalized and diffuses out of the surface of a well annealed tungsten foil coated with MgO which is positioned immediately behind the target. The slow positrons are extracted from the target region and magnetically guided over a distance of 10 m onto a channelplate multiplier at the end of an S-shaped solenoid. The positrons are identified by their annihilation radiation using two Nal-detectors. The intensity of the slow positrons is proportional to the accelerator electron beam current. The maximum intensity of 2.2 x 10 5 slow positrons per second reaching the detector at an accelerator current of 15 μA was limited by the power deposited in the uncooled target. The energy of the positrons is concentrated in a small region at about 1 eV and clearly demonstrates the emission of thermal positrons. (orig.)

  15. Spin polarization of electrons in quantum wires

    OpenAIRE

    Vasilchenko, A. A.

    2013-01-01

    The total energy of a quasi-one-dimensional electron system is calculated using density functional theory. It is shown that spontaneous ferromagnetic state in quantum wire occurs at low one-dimensional electron density. The critical electron density below which electrons are in spin-polarized state is estimated analytically.

  16. Role of spin polarized tunneling in magnetoresistance and low

    Indian Academy of Sciences (India)

    Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

  17. Improved Slow-Positron Yield using a Single Crystal Tungsten Moderator

    DEFF Research Database (Denmark)

    Vehanen, A.; Lynn, K. G.; Schultz, P. J.

    1983-01-01

    A well-annealed W(110) single crystal was used as a fast-to-slow positron moderator. The measured moderator efficiency at room temperature using a58Co positron source in the backscattering geometry isɛ =(3.2±0.4)×10−3, roughly a factor of three better thanɛ for the best previously reported Cu(111......)+S moderator. We find a stable positron moderation efficiency over a period of several weeks when maintained at pressures around 10−9 Torr and an energy spreadΔE = 0.7 eV of the emitted slow positrons. An initial attempt was made to fabricate a hybrid Cu on W(110) moderator, which yieldedɛ of about 1...

  18. Positron annihilation studies of mesoporous silica films using a slow positron beam

    International Nuclear Information System (INIS)

    He Chunqing; Muramatsu, Makoto; Ohdaira, Toshiyuki; Kinomura, Atsushi; Suzuki, Ryoichi; Ito, Kenji; Kabayashi, Yoshinori

    2006-01-01

    Positron annihilation lifetime spectra were measured for mesoporous silica films, which were synthesized using triblock copolymer (EO 106 PO 70 EO 106 ) as a structure-directing agent. Different positron lifetime spectra for the deposited and calcined films indicated the formation of meso-structure after calcination, which was confirmed by Fourier transform infrared (FTIR) spectra and field emission-scanning electron microscopy (FE-SEM) observation. Open porosity or pore interconnectivity of a silica film might be evaluated by a two-dimensional positron annihilation lifetime spectrum of an uncapped film. Pore sizes and their distributions in the silica films were found to be affected by thermal treatments

  19. Performance analysis of the intense slow-positron beam at the NC State University PULSTAR reactor

    International Nuclear Information System (INIS)

    Moxom, J.; Hathaway, A.G.; Bodnaruk, E.W.; Hawari, A.I.; Xu, J.

    2007-01-01

    An intense positron beam, for application in nanophase characterization, is now under construction at the 1 MW PULSTAR nuclear reactor at North Carolina State University (NCSU). A tungsten converter/moderator is used, allowing positrons to be emitted from the surface with energies of a few electron volts. These slow positrons will be extracted from the moderator and formed into a beam by electrostatic lenses and then injected into a solenoidal magnetic field for transport to one of three experimental stations, via a beam switch. To optimize the performance of the beam and to predict the slow-positron intensity, a series of simulations were performed. A specialized Monte-Carlo routine was integrated into the charged-particle transport calculations to allow accounting for the probabilities of positron re-emission and backscattering from multiple-bank moderator/converter configurations. The results indicate that either a two-bank or a four-bank tungsten moderator/converter system is preferred for the final beam design. The predicted slow-positron beam intensities range from nearly 7x10 8 to 9x10 8 e + /s for the two-bank and the four-bank systems, respectively

  20. Physical models and primary design of reactor based slow positron source at CMRR

    Science.gov (United States)

    Wang, Guanbo; Li, Rundong; Qian, Dazhi; Yang, Xin

    2018-07-01

    Slow positron facilities are widely used in material science. A high intensity slow positron source is now at the design stage based on the China Mianyang Research Reactor (CMRR). This paper describes the physical models and our primary design. We use different computer programs or mathematical formula to simulate different physical process, and validate them by proper experiments. Considering the feasibility, we propose a primary design, containing a cadmium shield, a honeycomb arranged W tubes assembly, electrical lenses, and a solenoid. It is planned to be vertically inserted in the Si-doping channel. And the beam intensity is expected to be 5 ×109

  1. The correlations of electrochromism and thermochromism of tungsten oxide films studied by slow positron beam

    International Nuclear Information System (INIS)

    Ma Chuangxin; Zhou Chunlan; Zhang Zhiming; Wang Baoyi; Wei Long

    2004-01-01

    Electrochromic (EC) and thermochromic (TC) tungsten oxide (WO 3 ) films, deposited by magnetron sputtering and vacuum thermal evaporation, were studied systematically by means of slow positron measurements. The S parameters of colored amorphous WO 3 film and crystalline WO 3 film behaved quite similarly in the processes of thermochromism and electrochromism, little influenced by the different deposition methods. It indicates that the coloration processes under various external conditions are correlated with each other. It also shows that the slow positron beam technique may play a particular role in the study of chromogenic materials. (orig.)

  2. Antiresonance induced spin-polarized current generation

    Science.gov (United States)

    Yin, Sun; Min, Wen-Jing; Gao, Kun; Xie, Shi-Jie; Liu, De-Sheng

    2011-12-01

    According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.

  3. The Intense Slow Positron Beam Facility at the NC State University PULSTAR Reactor

    International Nuclear Information System (INIS)

    Hawari, Ayman I.; Moxom, Jeremy; Hathaway, Alfred G.; Brown, Benjamin; Gidley, David W.; Vallery, Richard; Xu, Jun

    2009-01-01

    An intense slow positron beam is in its early stages of operation at the 1-MW open-pool PULSTAR research reactor at North Carolina State University. The positron beam line is installed in a beam port that has a 30-cmx30-cm cross sectional view of the core. The positrons are created in a tungsten converter/moderator by pair-production using gamma rays produced in the reactor core and by neutron capture reactions in cadmium cladding surrounding the tungsten. Upon moderation, slow (∼3 eV) positrons that are emitted from the moderator are electrostatically extracted, focused and magnetically guided until they exit the reactor biological shield with 1-keV energy, approximately 3-cm beam diameter and an intensity exceeding 6x10 8 positrons per second. A magnetic beam switch and transport system has been installed and tested that directs the beam into one of two spectrometers. The spectrometers are designed to implement state-of-the-art PALS and DBS techniques to perform positron and positronium annihilation studies of nanophases in matter.

  4. Application of positron annihilation to polymer and development of a radioisotopes-based pulsed slow positron beam apparatus

    International Nuclear Information System (INIS)

    Suzuki, Takenori

    2004-01-01

    Positrons injected into polymer behave as nanometer probes, which can detect the size and amount of intermolecular spaces among polymer structures. Although positrons can probe the characteristics of polymer, they induce a radiation effect on polymer samples. At low temperature, the radiation effect induces free electrons, which can be trapped in a shallow potential created among intermolecular structures after freezing molecular motions. These trapped electrons can be released after the disappearance of the shallow potential due to the reappearance of molecular motion above the relaxation temperature. Thus, positrons can be used as a probe for relaxation studies. Coincidence of Doppler broadening spectroscopy (CDBS) can improve the S/N ratio to 10 7 , which makes it possible to detect trace elements, since CDBS can separate the high-momentum component of core electrons. A pulsed slow positron beam apparatus is necessary for measuring holes in the polymer film and allows the measurement of the characteristics of thin film coated on semiconductors used widely in electronics industries. (author)

  5. Anomalous scattering of neutrons in spin-polarized media

    International Nuclear Information System (INIS)

    Bashkin, E.P.

    1989-01-01

    A new exchange mechanism of inelastic scattering with spin flip for slow neutrons propagating through a spin-polarized medium is studied. The scattering is accompanied by emission or absorption of thermal fluctuations of the transverse magnetization of the medium; the weakly damped Larmor precession of nuclear spins in the external magnetic field plays the main role in these fluctuations. Under the conditions of giant opalescence the effect is enormous and the corresponding cross sections are significantly greater than the standard elastic scattering cross sections. Thus in the case of 29 Si↑ and 3 He↑ under typical experimental conditions the cross sections of these inelastic processes are of the order of 10 5 -10 6 b

  6. Tunable pores in mesoporous silica films studied using a pulsed slow positron beam

    International Nuclear Information System (INIS)

    He Chunqing; Muramatsu, Makoto; Ohdaira, Toshiyuki; Oshima, Nagayasu; Kinomura, Atsushi; Suzuki, Ryoichi; Kobayashi, Yoshinori

    2007-01-01

    Positron annihilation lifetime spectroscopy (PALS) based on a pulsed slow positron beam was applied to study mesoporous silica films, synthesized using amphiphilic PEO-PPO-PEO triblock copolymers as structure-directing agents. The pore size depends on the loading of different templates. Larger pores were formed in silica films templated by copolymers with higher molecular-weights. Using 2-dimensional PALS, open porosity of silica films was also found to be influenced by the molecular-weight as well as the ratio of hydrophobic PPO moiety of the templates

  7. Slow positron beam study of hydrogen ion implanted ZnO thin films

    Science.gov (United States)

    Hu, Yi; Xue, Xudong; Wu, Yichu

    2014-08-01

    The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×1015 and 1×1016 ions cm-2. Zn vacancy and OH bonding (VZn+OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process.

  8. Defect layer in SiO2-Sic interface proved by a slow positron beam

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Miyashita, A.; Suzuki, R.; Ohdaira, T.

    2006-01-01

    The structure of the SiO 2 -4ph-SiC interface layer produced by dry oxidation has been studied by positron annihilation spectroscopy using slow positron beams. From Doppler broadening measurements, the interface layer was clearly distinguished from the SiO 2 and SiC layers and was observed to be defective. At the interface layer, a single long positron lifetime of 451 ps, which is close to the second lifetime in the SiO 2 layer, was obtained, thus suggesting that the structure of the interface layer resembles an amorphous SiO 2 network. A comparison was made between the obtained electron momentum distribution at the interface layer and the theoretical calculation. It was found that positrons annihilate with oxygen valence electrons. By annealing after the oxidation, the annihilation probability of the positrons with oxygen valence electrons and the number of interface traps decreased in the same temperature range, thus suggesting a correlation between interface traps and positron annihilation sites

  9. Development of a Slow Positron Facility at Hebrew University of Jerusalem

    Science.gov (United States)

    Kelleher, Aidan

    2013-03-01

    Positron annihilation spectroscopy provides both depth of penetration to study bulk defects in materials as well as nano-scale resolution. This measurement range is achieved by slowing positrons from a radioactive source, typically 22Na, by sending them through a moderator, typically W or solid Ne. The nearly thermal positrons are then accelerated to the desired energy by means of an electrostatic potential. The SPOT project at The Hebrew University of Jerusalem proposes to increase the luminosity of the beam by applying the best practices currently in us, as well as using a short-lived source of positrons, 18F. Simulations based on our current designs indicate this project will be able to deliver positrons in the energy range of 50-50000eV with an energy resolution of 1eV is possible. We will present the unique technical challenges of using this source of positrons, how we plan to overcome them, the results of simulations, and facility construction progress.

  10. Continuous control of spin polarization using a magnetic field

    Science.gov (United States)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

    2016-05-01

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  11. Continuous control of spin polarization using a magnetic field

    International Nuclear Information System (INIS)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y.

    2016-01-01

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  12. Continuous control of spin polarization using a magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Gifford, J. A.; Zhao, G. J.; Li, B. C.; Tracy, Brian D.; Zhang, J.; Kim, D. R.; Smith, David J.; Chen, T. Y., E-mail: tingyong.chen@asu.edu [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2016-05-23

    The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.

  13. Bulk electron spin polarization generated by the spin Hall current

    OpenAIRE

    Korenev, V. L.

    2005-01-01

    It is shown that the spin Hall current generates a non-equilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known equilibrium polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

  14. Bulk electron spin polarization generated by the spin Hall current

    Science.gov (United States)

    Korenev, V. L.

    2006-07-01

    It is shown that the spin Hall current generates a nonequilibrium spin polarization in the interior of crystals with reduced symmetry in a way that is drastically different from the previously well-known “equilibrium” polarization during the spin relaxation process. The steady state spin polarization value does not depend on the strength of spin-orbit interaction offering possibility to generate relatively high spin polarization even in the case of weak spin-orbit coupling.

  15. Spin-polarized spin excitation spectroscopy

    International Nuclear Information System (INIS)

    Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2010-01-01

    We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

  16. Slow positron beam study of hydrogen ion implanted ZnO thin films

    International Nuclear Information System (INIS)

    Hu, Yi; Xue, Xudong; Wu, Yichu

    2014-01-01

    The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×10 15 and 1×10 16 ions cm −2 . Zn vacancy and OH bonding (V Zn +OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process. - Highlights: • Hydrogen introduced by ion implantation can form hydrogen-related defect complex. • V Zn +OH defect complex is identified by positron annihilation and IR spectroscopy. • Irradiation defects suppress the luminescence process

  17. The Intense Slow Positron Source concept: A theoretical perspective on a proposed INEL Facility

    International Nuclear Information System (INIS)

    Makowitz, H.; Abrashoff, J.D.; Landman, W.H.; Albano, R.K.; Tajima, T.

    1992-01-01

    An analysis has been performed of the INEL Intense Slow Positron Source (ISPS) concept. The results of the theoretical study are encouraging. A full-scale device with a monoenergetic 5 KeV positron beam of ≥10 12 e + /s on a ≤0.03-cmdiameter target appears feasible and can be obtained within the existing infrastructure of INEL reactor facilities. A 30.0-cm-diameter, large area source dish, moderated at first with thin crystalline W films and later by solid Ne, is proposed as the initial device in order to explore problems with a facility scale system. A demonstration scale beam at ≥10 10 slow e + /s is proposed using a 58 Co source plated on a 6-cm-diameter source dish insert, placed in a 30- cm adapter

  18. Characterizing free volumes and layer structures in polymeric membranes using slow positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Jean, Y C; Chen Hongmin; Awad, Somia; Zhang Sui; Chen Hangzheng; Lau, Cher Hon; Wang Huan; Li Fuyun; Chung, Tai-Shung; Lee, L James; Huang, James

    2011-01-01

    Positron annihilation spectroscopy coupled with a newly built slow positron beam at National University of Singapore has been used to study the free volume, pore, and depth profile (0 - 10 μm) in cellulose acetate polymeric membrane at the bottom and top sides of membranes for ionic separation in water purification applications. The S and R parameters from Doppler broadening energy of annihilation radiation representing free volumes (0.1-1 nm size) and pores (>1 nm-μm) as a function of depth have been analyzed into multilayers, i.e. skin dense, transition, and porous layers, respectively. The top side of membrane has large free volumes and pores and the bottom side has a skin dense layer, which plays a key role in membrane performance. Positron annihilation lifetime results provide additional information about free-volume size and distribution at the atomic and molecular scale in polymeric membrane systems. Doppler broadening energy and lifetime spectroscopies coupled with a variable mono-energy slow positron beam are sensitive and novel techniques for characterization of polymeric membrane in separation applications.

  19. Spin-polarized free electron beam interaction with radiation and superradiant spin-flip radiative emission

    Directory of Open Access Journals (Sweden)

    A. Gover

    2006-06-01

    Full Text Available The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electron-spin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spin resonant spin-flip and combined spin-flip/cyclotron-resonance-emission radiation can be substantially enhanced by operating with ultrashort spin-polarized electron beam bunches under conditions of superradiant (coherent emission. The proposed radiative spin-state modulation and the spin-flip radiative emission schemes can be used for control and noninvasive diagnostics of polarized electron/positron beams. Such schemes are of relevance in important scattering experiments off nucleons in nuclear physics and off magnetic targets in condensed matter physics.

  20. Antihydrogen atom formation in a CUSP trap towards spin polarized beams

    Energy Technology Data Exchange (ETDEWEB)

    Kuroda, N., E-mail: kuroda@radphys4.c.u-tokyo.ac.jp [University of Tokyo, Graduate School of Arts and Sciences (Japan); Enomoto, Y. [RIKEN Advanced Science Institute (Japan); Michishio, K. [Tokyo University of Science, Department of Physics (Japan); Kim, C. H. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Higaki, H. [Hiroshima University, Graduate School of Advanced Science of Matter (Japan); Nagata, Y.; Kanai, Y. [RIKEN Advanced Science Institute (Japan); Torii, H. A. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Corradini, M.; Leali, M.; Lodi-Rizzini, E.; Venturelli, L.; Zurlo, N. [Universita di Brescia and Instituto Nazionale di Fisica Nucleare, Dipartimento di Chimica e Fisica per l' Ingegneria e per i Materiali (Italy); Fujii, K.; Ohtsuka, M.; Tanaka, K. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Imao, H. [RIKEN Nishina Center for Accelerator-Based Science (Japan); Nagashima, Y. [Tokyo University of Science, Department of Physics (Japan); Matsuda, Y. [University of Tokyo, Graduate School of Arts and Sciences (Japan); Juhasz, B. [Stefan Meyer Institut fuer Subatomare Physik (Austria); and others

    2012-12-15

    The ASACUSA collaboration has been making a path to realize high precision microwave spectroscopy of ground-state hyperfine transitions of antihydrogen atom in flight for stringent test of the CPT symmetry. For this purpose, an efficient extraction of a spin polarized antihydrogen beam is essential. In 2010, we have succeeded in synthesizing our first cold antihydrogen atoms employing a CUSP trap. The CUSP trap confines antiprotons and positrons simultaneously with its axially symmetric magnetic field to form antihydrogen atoms. It is expected that antihydrogen atoms in the low-field-seeking states are preferentially focused along the cusp magnetic field axis whereas those in the high-field-seeking states are defocused, resulting in the formation of a spin-polarized antihydrogen beam.

  1. Positron lifetime measurements and positron-annihilation induced auger electron spectroscpy using slow positron beams; Teisoku yodenshi bimu wo mochiita yodenshi jumyo sokutei oyobi yodenshi shometsu reiki oje denshi bunko

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, R. [Electrotechnical Lab., Tsukuba (Japan)

    1996-02-20

    Slow positron beam with less than several eV can be controlled freely such as accelerating, throttling the beam size, shortening the pulse or making pulse with short time width and so forth. These low positron beams are applied to various measurements like Doppler broadening measurement of annihilation {gamma} rays or lifetime measurement of positron, and secondary particle measurements using positron microscope, positron electron ray diffraction, flight time method and so forth. In particular, these recent years, high intensity slow positron beams were possible using accelerators like electron linac and its application is increasing. In this report, pulse shortening method for high intensity slow positron beam, and incidence energy variable positron lifetime measurement method using this slow pulsed beam and flight time type positron-annihilation-induced auger electron spectroscopy are outlined. In future, these measurements can be possible to carry out with high resolution and also with high counting rate if higher intensity monochromatic excellent positron beam than present one is produced. 31 refs., 5 figs.

  2. Study on efficiency of multi-wire tungsten moderator for slow positron source on SPring-8 hard synchrotron radiation

    International Nuclear Information System (INIS)

    Plokhoi, Vladimir; Kandiev, Yadgar; Samarin, Sergey; Malyshkin, Gennady; Baidin, Grigory; Litvinenko, Igor; Nikitin, Valery

    1999-01-01

    The paper provides results of numeric simulations of in-target positron production process, processes of moderation, thermalization, diffusion, and reemission of positrons in high efficiency multi-wire moderator made of tungsten monocrystalline wire with regular wire spacing. The paper looks into dynamics of slow positrons in the moderator's vacuum gaps taking into account of external fields. The possibility for using multi-wire moderator with non-regular structure - multi-layer w ire felt m oderator is discussed. According to maximal estimate the multi-wire moderators can reach very high efficiency of fast-slow positron transformation ∼ 10 -2 . Using such moderator the intensity of slow positron source on hard synchrotron radiation of Spring-8 can reach the level of ∼10 11 e + /s. (author)

  3. Organic light emitting diodes with spin polarized electrodes

    NARCIS (Netherlands)

    Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

    2003-01-01

    Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

  4. Detecting Spin-Polarized Currents in Ballistic Nanostructures

    DEFF Research Database (Denmark)

    Potok, R.; Folk, J.; M. Marcus, C.

    2002-01-01

    We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

  5. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

  6. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  7. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  8. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

  9. Diffusion equation and spin drag in spin-polarized transport

    DEFF Research Database (Denmark)

    Flensberg, Karsten; Jensen, Thomas Stibius; Mortensen, Asger

    2001-01-01

    We study the role of electron-electron interactions for spin-polarized transport using the Boltzmann equation, and derive a set of coupled transport equations. For spin-polarized transport the electron-electron interactions are important, because they tend to equilibrate the momentum of the two-s...

  10. Kinetic equation for spin-polarized plasmas

    International Nuclear Information System (INIS)

    Cowley, S.C.; Kulsrud, R.M.; Valeo, E.

    1984-07-01

    The usual kinetic description of a plasma is extended to include variables to describe the spin. The distribution function, over phase-space and the new spin variables, provides a sufficient description of a spin-polarized plasma. The evolution equation for the distribution function is given. The equations derived are used to calculate depolarization due to four processes, inhomogeneous fields, collisions, collisions in inhomogeneous fields, and waves. It is found that depolarization by field inhomogeneity on scales large compared with the gyroradius is totally negligible. The same is true for collisional depolarization. Collisions in inhomogeneous fields yield a depolarization rate of order 10 -4 S -1 for deuterons and a negligible rate for tritons in a typical fusion reactor design. This is still sufficiently small on reactor time scales. However, small amplitude magnetic fluctuations (of order one gauss) resonant with the spin precession frequency can lead to significant depolarization (depolarises triton in ten seconds and deuteron in a hundred seconds.)

  11. Core Technology Development of Nuclear spin polarization

    International Nuclear Information System (INIS)

    Yoo, Byung Duk; Gwon, Sung Ok; Kwon, Duck Hee; Lee, Sung Man

    2009-12-01

    In order to study nuclear spin polarization, we need several core technologies such as laser beam source to polarize the nuclear spin, low pressured helium cell development whose surface is essential to maintain polarization otherwise most of the polarized helium relaxed in short time, development of uniform magnetic field system which is essential for reducing relaxation, efficient vacuum system, development of polarization measuring system, and development of pressure raising system about 1000 times. The purpose of this study is to develop resonable power of laser system, that is at least 5 watt, 1083 nm, 4GHz tuneable. But the limitation of this research fund enforce to develop amplifying system into 5 watt with 1 watt system utilizing laser-diod which is already we have in stock. We succeeded in getting excellent specification of fiber laser system with power of 5 watts, 2 GHz linewidth, more than 80 GHz tuneable

  12. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  13. 14th International Workshop on Slow Positron Beam Techniques and Applications

    International Nuclear Information System (INIS)

    2017-01-01

    These proceedings arose from the 14th International Workshop on Slow Positron Beam Techniques (SLOPOS14), which was held at Kunibiki Messe, Matsue, Shimane prefecture, Japan, from the 22nd—27th May 2016. Meetings in the SLOPOS series are held every three years. The SLOPOS workshop series has traditionally been devoted to investigations on the production of positron and positronium beams, their fundamental physics and chemistry, and their applications to materials such as metals, semiconductors and soft matter. During the workshop numerous applications using positron and positronium beams were also presented, clearly demonstrating the usefulness of such beams to the determination of surface structure, defect characterization as well as to fundamental scientific studies. For SLOPOS14 the main subjects of the workshop included the following: • Positron transport and beam technology • Pulsed positron beams and positron traps • Defect profiling in bulk and layered structures • Nano structures, porous materials and thin films • Surface and interface analysis • Positronium formation, emission and beams • Positron and positronium interactions with atoms and molecules • Many positrons and anti-hydrogen • Improvement of experimental techniques 106 delegates from 14 countries participated in the SLOPOS14, including 31 student delegates, which was a most encouraging sign for the future. The scientific program comprised 5 plenary talks, 22 invited talks, 32 contributed talks and 46 posters presented during two poster sessions. Student prizes were awarded for the best presented scientific contributions by 4 students from University of College London, Universität der Bundeswehr München and The University of Tokyo. On a sad note, delegates paid tribute to the contributions of our recently deceased colleagues, Prof. A. Seeger, Prof. R.N. West, Prof. T.C. Griffith, and Prof. Z. Tang. Memorial talks were given and a one minute silence was observed before the

  14. Design for a high intensity slow positron facility using forward scattered radiation from an electron linear accelerator

    International Nuclear Information System (INIS)

    Hulett, L.D. Jr.; Lewis, T.A.; Alsmiller, R.G. Jr.; Peelle, R.; Pendyale, S.; Dale, J.M.; Rosseel, T.M.

    1986-01-01

    A tungsten moderator will be placed behind the target of the Oak Ridge Electron Linear Accelerator (ORELA) to convert gamma radiation to slow positrons. These will be extracted and led through evacuated solenoids to an experiment room. A Penning trap will be used to extend the slow positron pulses to achieve duty factors of 10% or greater. The facility will be used for atomic and molecular physics studies, positron microscopy, and materials research. Operations will be inexpensive and will not interfere with the normal function of ORELA, the measurement of neutron cross sections by flight-time spectrometry

  15. Exploring of defects in He+ implanted Si(100) by slow positron beam

    International Nuclear Information System (INIS)

    Zhang Tianhao; Weng Huimin; Fan Yangmei; Du Jiangfeng; Zhou Xianyi; Han Rongdian; Zhang Miao; Lin Chenglu

    2001-01-01

    Si(100) crystal implanted by 5 x 10 16 cm -2 , 140 keV He + was probed by slow positron beam, and defect distribution along depth was obtained from the relation between S parameter and positron incidence energy. The near surface region of implanted sample was only slightly damaged. Small vacancies and vacancy clusters less than 1 nm in diameter were the dominant defects, while the deeper region around the He + projected range was heavily damaged and had dense larger helium micro-bubbles and microvoids. Thermal anneal study at different temperatures showed that low temperature annealing could remove most vacancy-type defects effectively. However, annealing at high temperature enlarged the diameters of micro-bubbles and microvoids

  16. Ion-implantation induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sekiguchi, T.; Suzuki, R.

    2004-01-01

    Introduction and annealing behavior of defects in Al + -implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al + -implantation. With increasing ion dose above 10 14 Al + /cm 2 the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  17. Ion-implantation induced defects in ZnO studied by a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A. [Japan Atomic Energy Research Institute, Gunma (Japan); Sekiguchi, T. [National Inst. for Materials Science, Tsukuba, Ibaraki (Japan); Suzuki, R. [National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

    2004-07-01

    Introduction and annealing behavior of defects in Al{sup +}-implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al{sup +}-implantation. With increasing ion dose above 10{sup 14} Al{sup +}/cm{sup 2} the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  18. Present status of the low energy linac-based slow positron beam and positronium spectrometer in Saclay

    Science.gov (United States)

    Liszkay, L.; Comini, P.; Corbel, C.; Debu, P.; Grandemange, P.; Pérez, P.; Rey, J.-M.; Reymond, J.-M.; Ruiz, N.; Sacquin, Y.; Vallage, B.

    2014-04-01

    A new slow positron beamline featuring a large acceptance positronium lifetime spectrometer has been constructed and tested at the linac-based slow positron source at IRFU CEA Saclay, France. The new instrument will be used in the development of a dense positronium target cloud for the GBAR experiment. The GBAR project aims at precise measurement of the gravitational acceleration of antihydrogen in the gravitational field of the Earth. Beyond application in fundamental science, the positron spectrometer will be used in materials research, for testing thin porous films and layers by means of positronium annihilation. The slow positron beamline is being used as a test bench to develop further instrumentation for positron annihilation spectroscopy (Ps time-of-flight, pulsed positron beam). The positron source is built on a low energy linear electron accelerator (linac). The 4.3 MeV electron energy used is well below the photoneutron threshold, making the source a genuine on-off device, without remaining radioactivity. The spectrometer features large BGO (Bismuth Germanate) scintillator detectors, with sufficiently large acceptance to detect all ortho-positronium annihilation lifetime components (annihilation in vacuum and in nanopores).

  19. Evolution of voids in Al+-implanted ZnO probed by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Yamamoto, S.; Kawasuso, A.; Yuan, X.L.; Sekiguchi, T.; Suzuki, R.; Ohdaira, T.

    2004-01-01

    Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 10 15 Al + /cm 2 . Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V 8 , are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter increases in the temperature range from 200 deg. C to 600 deg. C suggesting further agglomeration of vacancy clusters to voids. Detailed analyses of Doppler broadening spectra show formation of positronium after 600 deg. C annealing of the implanted samples with doses higher than 10 14 Al + /cm 2 . Positron lifetime measurements further suggest that the void diameter is about 0.8 nm. The voids disappear and the vacancy concentration reaches the detection limit after annealing at 600-900 deg. C. Hall measurement shows that the implanted Al + ions are fully activated with improved carrier mobility after final annealing. Cathodoluminescence measurements show that the ultraviolet luminescence is much stronger than the unimplanted state. These findings also suggest that the electrical and optical properties of ZnO become much better by Al + implantation and subsequent annealing

  20. Evaluation of radiative spin polarization in an electron storage ring

    Energy Technology Data Exchange (ETDEWEB)

    Chao, A W [Stanford Linear Accelerator Center, CA (USA)

    1981-02-15

    We have developed a matrix formalism that provides an accurate way of evaluating the degree of spin polarization built up through the process of synchrotron radiation under a wide variety of storage ring operation conditions.

  1. Neutron stars with spin polarized self-interacting dark matter

    OpenAIRE

    Rezaei, Zeinab

    2018-01-01

    Dark matter, one of the important portion of the universe, could affect the visible matter in neutron stars. An important physical feature of dark matter is due to the spin of dark matter particles. Here, applying the piecewise polytropic equation of state for the neutron star matter and the equation of state of spin polarized self-interacting dark matter, we investigate the structure of neutron stars which are influenced by the spin polarized self-interacting dark matter. The behavior of the...

  2. Positron emission tomography suggests that the rate of progression of idiopathic parkinsonism is slow

    International Nuclear Information System (INIS)

    Bhatt, M.H.; Snow, B.J.; Martin, W.R.; Pate, B.D.; Ruth, T.J.; Calne, D.B.

    1991-01-01

    The authors performed sequential positron emission tomography scans with 6-[18F]fluoro-L-dopa in 9 patients with idiopathic parkinsonism and 7 age-matched normal control subjects to compare changes in the nigrostriatal dopaminergic pathway over time. The mean interval between the scans was 3.3 years for the group with idiopathic parkinsonism and 3.9 years for the control subjects. The scans were analyzed by calculating the ratio of striatal to background radioactivity. Both groups showed statistically significant reductions of striatal uptake over the interval. The rate of decrease was almost identical in each group (p = 0.6). They infer that the usual rate of loss of integrity of the dopaminergic nigrostriatal pathway in patients with idiopathic parkinsonism is slow and the rate of change between the two groups was comparable

  3. Defect characterization of CdTe thin films using a slow positron beam

    International Nuclear Information System (INIS)

    Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

    2007-01-01

    Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Spin-polarized hydrogen, deuterium, and tritium : I

    International Nuclear Information System (INIS)

    Haugen, M.; Ostgaard, E.

    1989-01-01

    The ground-state energy of spin-polarized hydrogen, deuterium and tritium is calculated by means of a modified variational lowest order constrained-variation method, and the calculations are done for five different two-body potentials. Spin-polarized H is not self-bound according to our theoretical results for the ground-state binding energy. For spin-polarized D, however, we obtain theoretical results for the ground-state binding energy per particle from -0.4 K at an equilibrium particle density of 0.25 σ -3 or a molar volume of 121 cm 3 /mol to +0.32 K at an equilibrium particle density of 0.21 σ -3 or a molar volume of 142 cm 3 /mol, where σ = 3.69 A (1A = 10 -10 m). It is, therefore, not clear whether spin-polarized deuterium should be self-bound or not. For spin-polarized T, we obtain theoretical results for the ground-state binding energy per particle from -4.73 K at an equilibrium particle density of 0.41 σ -3 or a molar volume of 74 cm 3 /mol to -1.21 K at an equilibrium particle density of 0.28 σ -3 or a molar volume of 109 cm 3 /mol. (Author) 27 refs., 9 figs., tab

  5. The intense slow positron beam facility at the PULSTAR reactor and applications in nano-materials study

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ming; Moxom, Jeremy; Hawari, Ayman I. [Nuclear Reactor Program, Department of Nuclear Engineering, North Carolina State University, P.O. Box 7909, Raleigh, NC 27695 (United States); Gidley, David W. [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor MI 48109 (United States)

    2013-04-19

    An intense slow positron beam has been established at the PULSTAR nuclear research reactor of North Carolina State University. The slow positrons are generated by pair production in a tungsten moderator from gammarays produced in the reactor core and by neutron capture reactions in cadmium. The moderated positrons are electrostatically extracted and magnetically guided out of the region near the core. Subsequently, the positrons are used in two spectrometers that are capable of performing positron annihilation lifetime spectroscopy (PALS) and positron Doppler broadening spectroscopy (DBS) to probe the defect and free volume properties of materials. One of the spectrometers (e{sup +}-PALS) utilizes an rf buncher to produce a pulsed beam and has a timing resolution of 277 ps. The second spectrometer (Ps-PALS) uses a secondary electron timing technique and is dedicated to positronium lifetime measurements with an approximately 1 ns timing resolution. PALS measurements have been conducted in the e{sup +}-PALS spectrometer on a series of nano-materials including organic photovoltaic thin films, membranes for filtration, and polymeric fibers. These studies have resulted in understanding some critical issues related to the development of the examined nano-materials.

  6. The intense slow positron beam facility at the PULSTAR reactor and applications in nano-materials study

    Science.gov (United States)

    Liu, Ming; Moxom, Jeremy; Hawari, Ayman I.; Gidley, David W.

    2013-04-01

    An intense slow positron beam has been established at the PULSTAR nuclear research reactor of North Carolina State University. The slow positrons are generated by pair production in a tungsten moderator from gammarays produced in the reactor core and by neutron capture reactions in cadmium. The moderated positrons are electrostatically extracted and magnetically guided out of the region near the core. Subsequently, the positrons are used in two spectrometers that are capable of performing positron annihilation lifetime spectroscopy (PALS) and positron Doppler broadening spectroscopy (DBS) to probe the defect and free volume properties of materials. One of the spectrometers (e+-PALS) utilizes an rf buncher to produce a pulsed beam and has a timing resolution of 277 ps. The second spectrometer (Ps-PALS) uses a secondary electron timing technique and is dedicated to positronium lifetime measurements with an approximately 1 ns timing resolution. PALS measurements have been conducted in the e+-PALS spectrometer on a series of nano-materials including organic photovoltaic thin films, membranes for filtration, and polymeric fibers. These studies have resulted in understanding some critical issues related to the development of the examined nano-materials.

  7. Spin polarized states in strongly asymmetric nuclear matter

    International Nuclear Information System (INIS)

    Isayev, A.A.; Yang, J.

    2004-01-01

    The possibility of appearance of spin polarized states in strongly asymmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with the Skyrme effective interaction. The zero temperature dependence of the neutron and proton spin polarization parameters as functions of density is found for SLy4 and SLy5 effective forces. It is shown that at some critical density strongly asymmetric nuclear matter undergoes a phase transition to the state with the oppositely directed spins of neutrons and protons while the state with the same direction of spins does not appear. In comparison with neutron matter, even small admixture of protons strongly decreases the threshold density of spin instability. It is clarified that protons become totally polarized within a very narrow density domain while the density profile of the neutron spin polarization parameter is characterized by the appearance of long tails near the transition density

  8. An enhancement of spin polarization by multiphoton pumping in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2011-08-15

    Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  9. An enhancement of spin polarization by multiphoton pumping in semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2011-01-01

    Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  10. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  11. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  12. Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

    International Nuclear Information System (INIS)

    Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

    2010-01-01

    The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

  13. Physical processes in spin polarized plasmas

    International Nuclear Information System (INIS)

    Kulsrud, R.M.; Valeo, E.J.; Cowley, S.

    1984-05-01

    If the plasma in a nuclear fusion reactor is polarized, the nuclear reactions are modified in such a way as to enhance the reactor performance. We calculate in detail the modification of these nuclear reactions by different modes of polarization of the nuclear fuel. We also consider in detail the various physical processes that can lead to depolarization and show that they are by and large slow enough that a high degree of polarization can be maintained

  14. Experiment on the melting pressure of spin polarized He3

    DEFF Research Database (Denmark)

    Chapellier, M.; Olsen, M.; Rasmussen, Finn Berg

    1981-01-01

    In liquid He in a Pomeranchuk cell, the melting curve has been observed to be suppressed, presumably in regions with a strong local spin polarization. In the temperature range 30-50 mK the observed suppression was 60-80 kPa. The corresponding local polarization is estimated, in a crude model...

  15. Current-Induced Spin Polarization at a Single Heterojunction

    NARCIS (Netherlands)

    Silov, A.; Blajnov, P.; Wolter, J.H.; Hey, R.; Ploog, K.; Averkiev, N.S.; Menendez, J.; Walle, van der C.G.

    2005-01-01

    We have experimentally achieved spin-polarization by a lateral current in a single non-magnetic semiconductor heterojunction. The effect does not require an applied magnetic field or ferromagnetic contacts. The current-induced spin orientation can be seen as the inverse of the circular

  16. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  17. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  18. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.

    1992-01-01

    This report discusses the following topics relating to inertial confinement with spin polarized hydrogen targets: low temperature implementation of mating a target to omega; dilution-refrigerator cold-entry and retrieval system; target shell tensile strength characterization at low temperatures; and proton and deuteron spin-lattice relaxation measurements in HD in the millikelvin temperature range

  19. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    Science.gov (United States)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    2017-10-25

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  20. Tuning the properties of an MgO layer for spin-polarized electron transport

    Science.gov (United States)

    Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

    2014-08-01

    The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

  1. Magnetic focusing of an intense slow positron beam for enhanced depth-resolved analysis of thin films and interfaces

    CERN Document Server

    Falub, C V; Mijnarends, P E; Schut, H; Veen, A V

    2002-01-01

    The intense reactor-based slow positron beam (POSH) at the Delft research reactor has been coupled to a Two-Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) setup. The design is discussed with a new target chamber for the 2D-ACAR setup based on Monte Carlo simulations of the positron trajectories, beam energy distribution and beam transmission in an increasing magnetic field gradient. Numerical simulations and experiment show that when the slow positron beam with a FWHM of 11.6 mm travels in an increasing axial magnetic field created by a strong NdFeB permanent magnet, the intensity loss is negligible above approx 6 keV and a focusing factor of 5 in diameter is achieved. Monte Carlo simulations and Doppler broadening experiments in the target region show that in this configuration the 2D-ACAR setup can be used to perform depth sensitive studies of defects in thin films with a high resolution. The positron implantation energy can be varied from 0 to 25 keV before entering the non-uniform mag...

  2. Spin-polarized gapped Dirac spectrum of unsupported silicene

    Energy Technology Data Exchange (ETDEWEB)

    Podsiadły-Paszkowska, A., E-mail: agata.podsiadly@gmail.com; Krawiec, M., E-mail: mariusz.krawiec@umcs.pl

    2016-06-15

    Highlights: • Effects of spin–orbit interaction and atomic reconstruction of silicene on its electronic properties have been studied. • Spin-polarized gapped Dirac spectrum has been revealed. • Two different AFM phases have been obtained. - Abstract: We study effects of the spin–orbit interaction and the atomic reconstruction of silicene on its electronic spectrum. As an example we consider unsupported silicene pulled off from Pb(111) substrate. Using first principles density functional theory we show that the inversion symmetry broken arrangement of atoms and the spin–orbit interaction generate a spin-polarized electronic spectrum with an energy gap in the Dirac cone. These findings are particularly interesting in view of the quantum anomalous and quantum valley Hall effects and should be observable in weakly interacting silicene-substrate systems.

  3. Widespread spin polarization effects in photoemission from topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

    2011-06-22

    High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

  4. Application of spin-polarized fuel to fusion reactions

    International Nuclear Information System (INIS)

    Wakuta, Y.; Nakao, Y.; Honda, T.; Honda, Y.; Nakashima, H.

    1990-01-01

    Studies on the application of the polarized fuel to the inertial fusion reaction have been carried out. It is shown that the use of the spin-polarized fuel D vector·T vector or D vector· 3 (He)vector reduces the irradiating laser power more than 50% compared with the use of the unpolarized fuel. The depolarization rate of the polarized fuel during the fusing process is found to be almost negligible. (author)

  5. Injection of spin-polarized current into semiconductor

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

    2003-01-01

    A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

  6. Spin polarized semimagnetic exciton-polariton condensate in magnetic field.

    Science.gov (United States)

    Król, Mateusz; Mirek, Rafał; Lekenta, Katarzyna; Rousset, Jean-Guy; Stephan, Daniel; Nawrocki, Michał; Matuszewski, Michał; Szczytko, Jacek; Pacuski, Wojciech; Piętka, Barbara

    2018-04-27

    Owing to their integer spin, exciton-polaritons in microcavities can be used for observation of non-equilibrium Bose-Einstein condensation in solid state. However, spin-related phenomena of such condensates are difficult to explore due to the relatively small Zeeman effect of standard semiconductor microcavity systems and the strong tendency to sustain an equal population of two spin components, which precludes the observation of condensates with a well defined spin projection along the axis of the system. The enhancement of the Zeeman splitting can be achieved by introducing magnetic ions to the quantum wells, and consequently forming semimagnetic polaritons. In this system, increasing magnetic field can induce polariton condensation at constant excitation power. Here we evidence the spin polarization of a semimagnetic polaritons condensate exhibiting a circularly polarized emission over 95% even in a moderate magnetic field of about 3 T. Furthermore, we show that unlike nonmagnetic polaritons, an increase on excitation power results in an increase of the semimagnetic polaritons condensate spin polarization. These properties open new possibilities for testing theoretically predicted phenomena of spin polarized condensate.

  7. Development of spin-polarized transmission electron microscope

    International Nuclear Information System (INIS)

    Kuwahara, M; Saitoh, K; Tanaka, N; Takeda, Y; Ujihara, T; Asano, H; Nakanishi, T

    2011-01-01

    In order to study spin related phenomena in nano-size materials, spin-polarized electron source (PES) has been employed for the incident beam in transmission electron microscope (TEM). The PES has been designed and constructed with optimizing for spin-polarized TEM. The illuminating system of TEM is also designed to focus the spin-polarized electron beam emitted from a semiconductor photocathode with a negative electron affinity (NEA) surface. The beam energy is set to below 40 keV which is lower energy type as a TEM, because the spin interaction with condensed matters is very small corresponding with a Coulomb interaction. The polarized electron gun has realized in an extra high vacuum (XHV) condition and high field gradient of 4 MV/m on a surface of photocathode. Furthermore, it demonstrated that 40-keV polarized electron beam was operated with a sub-milli second pulse mode by using the backside excitation type photocathode. This high performance PES will make it possible to observe dynamically a magnetic field images with high contrast and highspeed temporal imaging in TEM.

  8. Slow positrons in single-crystal samples of Al and Al-AlxOy

    Science.gov (United States)

    Lynn, K. G.; Lutz, H.

    1980-11-01

    Well-characterized Al(111) and Al(100) samples were studied with monoenergetic positrons before and after exposure to oxygen. Both positronium-formation and positron-emission curves were obtained for various incident positron energies at sample temperatures ranging from 160-900 K. The orthopositronium decay signal provides a unique signature that the positron has emerged from the surface region of a clean metal. In the clean Al crystals part of the positronium formed near the surface is found to be associated with a temperature-activated process described as the thermally activated detrapping of a positron from a surface state. A simple positron diffusion model, including surface and vacancy trapping, is fitted to the positronium data and an estimate of the binding energy of the positron in this trap is made. The positron diffusion constant is found to have a negative temperature dependence before the onset of positron trapping at thermally generated monovacancies (>500 K), in reasonable agreement with theoretical predictions. The depth of the positron surface state is reduced or positronium is formed in the chemisorbed layer as oxygen is adsorbed on both Al sample surfaces, thus increasing the positronium fraction and decreasing the positron emission. At higher oxygen exposures [>500 L (1 L = 10-6 torr sec)] positron or positronium traps are generated in the overlayer and the positronium fraction is reduced. The amorphous-to-crystalline surface transition of AlxOy on Al is observed between 650 and 800 K by the change in the positronium fraction and is interpreted as the removal of trapping centers in the metal-oxide overlayer. At the higher temperatures and incident energies vacancy trapping is observed by the decrease in the positron diffusion length in both the clean and the underlying Al of the oxygen-exposed samples. Similar vacancy formation enthalpies for Al are extracted in both the clean and oxygen-covered samples by a simple model and are in good

  9. Preliminary considerations of an intense slow positron facility based on a 78Kr loop in the high flux isotopes reactor

    International Nuclear Information System (INIS)

    Hulett, L.D. Jr.; Donohue, D.L.; Peretz, F.J.; Montgomery, B.H.; Hayter, J.B.

    1990-01-01

    Suggestions have been made to the National Steering Committee for the Advanced Neutron Source (ANS) by Mills that provisions be made to install a high intensity slow positron facility, based on a 78 Kr loop, that would be available to the general community of scientists interested in this field. The flux of thermal neutrons calculated for the ANS is E + 15 sec -1 m -2 , which Mills has estimated will produce 5 mm beam of slow positrons having a current of about 1 E + 12 sec -1 . The intensity of such a beam will be a least 3 orders of magnitude greater than those presently available. The construction of the ANS is not anticipated to be complete until the year 2000. In order to properly plan the design of the ANS, strong considerations are being given to a proof-of-principle experiment, using the presently available High Flux Isotopes Reactor, to test the 78 Kr loop technique. The positron current from the HFIR facility is expected to be about 1 E + 10 sec -1 , which is 2 orders of magnitude greater than any other available. If the experiment succeeds, a very valuable facility will be established, and important formation will be generated on how the ANS should be designed. 3 refs., 1 fig

  10. Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

    International Nuclear Information System (INIS)

    Ling, C.C.; Beling, C.D.; Fung, S.; Weng, H.M.

    2002-01-01

    Slow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10 -4 has been observed. After 30 min of 1000 deg. C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9x10 -4 , but it then dropped to ∼10 -5 upon a further 30 min annealing at 1400 deg. C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000 deg. C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10 -5 , some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface. (author)

  11. Performance of a slow positron beam using a hybrid lens design

    International Nuclear Information System (INIS)

    Cheung, C.K.; Naik, P.S.; Beling, C.D.; Fung, S.; Weng, H.M.

    2006-01-01

    The University of Hong Kong positron beam employs conventional magnetic field transport to the target, but has a special hybrid lens design around the positron moderator that allows the beam to be focused to millimeter spot sizes at the target. The good focusing capabilities of the beam are made possible by extracting work-function positrons from the moderator in a magnetic field free region using a conventional Soa lens thus minimizing beam canonical angular momentum. An Einzel lens is used to focus the positrons into the magnetic funnel at the end of transportation magnetic field while at the same time bringing up the beam energy to the intermediate value of 7.5 keV. The beam is E x B filtered at this intermediate energy. The final beam energy is obtained by floating the Soa-Einzel system, E x B filter and flight tube, and accelerating the positrons just before the target. External beam steering saddle coils fine tune the position, and the magnetic field around the target chamber is adjusted so as to keep one of the beam foci always on the target. The system is fully computer controlled. Variable energy-Doppler broadened annihilation radiation (VEDBAR) data for a GaN sample are shown which demonstrate the performance of the positron beam system

  12. Slow positron beam study of corrosion behavior of AM60B magnesium alloy in NaCl solution

    International Nuclear Information System (INIS)

    Yang, W.; Zhu, Z.J.; Wang, J.J.; Wu, Y.C.; Zhai, T.; Song, G.-L.

    2016-01-01

    Highlights: • Positron annihilation is a sensitive tool to characterize the corrosion layer. • The interfacial voids promoted the formation of Mg(OH) 2 corrosion layer. • Mg(OH) 2 precipitated during early corrosion stage provided a temporary protection. - Abstract: The corrosion behavior of super vacuum die-cast AM60B magnesium alloys immersed in a 5 wt% NaCl solution was investigated by slow positron beam technique, XRD, XPS, SEM and potentiodynamic polarization tests. The XRD and XPS results indicated that Mg(OH) 2 was main corrosion product in the salt solution. With prolonging the immersion time, a significant decrease of Doppler-broadened annihilation line-width parameter near the surface after corrosion was observed and interpreted that the pre-existing interfacial voids between oxide film and matrix might promote the formation of Mg(OH) 2 corrosion layer. Polarization tests found that Mg(OH) 2 could provide a temporary protection.

  13. Interface properties of 4H-SiC MOS structures studied by a slow positron beam

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Ichimiya, A.; Yoshikawa, M.

    2004-01-01

    Interfacial defects existing near the SiO 2 /SiC interface are an important issue for fabrication of high performance SiC devices. We investigate a thermally grown SiO 2 /SiC layer of 4H-SiC MOS structure by positron annihilation spectroscopy. The Doppler broadening of annihilation quanta was measured as a function of the incident positron energy and the gate bias. Applying a negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards the SiO 2 /SiC interface and annihilation at interfacial defects. Ultraviolet (UV) ray irradiation was used to extract the influence of the positron trapping to the interfacial states. S-parameters in the interface region were reduced by UV irradiation. This shows that positron trapping probability decreased because the charge state of interfacial defects changed to positive. From the recovery of S-parameters after 24 hours, the interfacial states discharge slowly and exist in large quantities, because the changes of S-parameter by the UV irradiation are larger than changes induced by bias change. (orig.)

  14. Conceptual design of a slow positron source based on a magnetic trap

    CERN Document Server

    Volosov, V I; Mezentsev, N A

    2001-01-01

    A unique 10.3 T superconducting wiggler was designed and manufactured at BINP SB RAS. The installation of this wiggler in the SPring-8 storage ring provides a possibility to generate a high-intensity beam of photons (SR) with energy above 1 MeV (Ando et al., J. Synchrotron Radiat. 5 (1998) 360). Conversion of photons to positrons on high-Z material (tungsten) targets creates an integrated positron flux more than 10 sup 1 sup 3 particles per second. The energy spectrum of the positrons has a maximum at 0.5 MeV and the half-width about 1 MeV (Plokhoi et al., Jpn. J. Appl. Phys. 38 (1999) 604). The traditional methods of positron moderation have the efficiency epsilon=N sub s /N sub f of 10 sup - sup 4 (metallic moderators) to 10 sup - sup 2 (solid rare gas moderators) (Mills and Gullikson, Appl. Phys. Lett. 49 (1986) 1121). The high flux of primary positrons restricts the choice to a tungsten moderator that has epsilon approx 10 sup - sup 4 only (Schultz, Nuc. Instr. and Meth. B 30 (1988) 94). The aim of our pr...

  15. Flash lamp annealing of tungsten surfaces marks a new way to optimized slow positron yields

    Science.gov (United States)

    Anwand, W.; Johnson, J. M.; Butterling, M.; Wagner, A.; Skorupa, W.; Brauer, G.

    2013-06-01

    Tungsten in the form of a mono-crystalline foil with an optimum thickness of about 2 μm is often used as a positron moderator in mono-energetic positron beams with 22Na positron sources. The efficiency of such a moderator strongly depends on its prior heat treatment, i.e. an annealing procedure with considerable difficulty at temperatures of about 2000 °C under vacuum conditions. Flash lamp annealing (FLA) has been tested as new method to quickly anneal W foils in order to produce easy manageable, low-cost moderators with a high efficiency. With FLA, just the surface of a W foil is heated above the melting point (3422°C) within 1 to 3 ms, i.e. without melting the whole foil volume. In this way, a surface cleaning is reached connected with a considerable increase in the positron diffusion length. Conventional polycrystalline W foils of 9 μm ± 25% thickness, heat treated by FLA, were characterized and tested as positron moderators. First promising tests result in a moderator efficiency of ~3*10-4 and clearly demonstrate that FLA is also applicable to tungsten meshes.

  16. New materials research for high spin polarized current

    International Nuclear Information System (INIS)

    Tezuka, Nobuki

    2012-01-01

    The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

  17. POLARIZED BEAMS: 1 - Longitudinal electron spin polarization at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1994-09-15

    Wednesday 4 May marked a turning point in the art of the manipulation of spins in electron storage rings: longitudinal electron spin polarization (with the spins oriented along the electrons' direction of motion) was established in the electron ring of HERA, the electronproton collider at DESY in Hamburg. A polarization level of about 55% was obtained and polarizations of over 60% were reproducibly obtained in the following days. The beam energy was 27.52 GeV, corresponding to half integer spin tune of 62.5.

  18. Native defects in ZnO films studied by slow positron beam

    International Nuclear Information System (INIS)

    Peng Chengxiao; Weng Huimin; Ye Bangjiao; Zhou Xianyi; Han Rongdian; Yang Xiaojie

    2005-01-01

    Native defects in ZnO films grown by radio frequency (RF) reactive magnetron sputtering under variable oxygen fraction conditions have been investigated by using monoenergetic positrons beam technique. The results show that the same type defects dominate in these ZnO samples grown at oxygen fraction less than 70% in the process chamber; and zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with oxygen partial fraction rising. While oxygen fraction reaches 85%, zinc vacancies that could trap positrons decrease, which suggests that impurities could shield zinc vacancies. A combination between hydrogen atoms and the dangling bonds in the lattice could weaken the trap of positrons under the 50% oxygen fraction condition. The concentration of zinc vacancies varies in different oxygen fraction films, which is in agreement with the conclusion of photoluminescence spectroscopy. (authors)

  19. Status and Perspectives for a Slow Positron Beam Facility at the HH-NIPNE Bucharest

    Science.gov (United States)

    Straticiuc, Mihai; Craciun, Liviu Stefan; Constantinescu, Olimpiu; Ghita, Ionica Alina; Ionescu, Cristina; Racolta, Petru Mihai; Vasilescu, Angela; Braic, Viorel; Zoita, Catalin; Kiss, Adrian; Bojin, Dionezie

    2009-03-01

    The development of a positron annihilation spectroscopy laboratory at the HH-NIPNE Bucharest-to be used for material studies and applications was started in the last 10 years. In the framework of a national research project extended over the last 3 years, was designed a low energy positron accelerator, as a high-vacuum dedicated beam line with two options: a 25 mCi 22NaCl source and in line with the NIPNE-cyclotron or a new intense compact cyclotron. The construction of the beam line was planned as a sequence of modules: source- moderator system; magnetical filter for fast positrons in order to select the positrons energies in the range 0.8-1 keV; a modular system for focusing, transport and acceleration of monoenergetic positrons in the energy range 0.8-50 keV and a CDBS analysis chamber. The moderator proposed-is tungsten as a foil of about 3 μm prepared at the Optoelectronics Institute were put into a thermal treatment vacuum chamber and bombarded with electrons from a 100 W electron gun After the treatment, they were tested for changes of elemental composition of the surface and structure at the Polytechnic University. The structure tests were performed on a DRON 3 M diffractometer, with a Co tube (λKα = 1.7903 A)-the angular regions studied were around 34° (1 0 0) and 69° (2 0 0). In the present time, the trajectories of the positron are going to be simulated with dedicated software (an ion and electron optics simulator). For the coincidence measurements (CDBS) set-up we used a home-made 22NaCl source, by separation without carrier from a metallic Mg target irradiated with 12 MeV protons and separated by columnar cation exchange. A home- made biparametric system for CDBS measurements will be reported, also.

  20. Status and Perspectives for a Slow Positron Beam Facility at the HH—NIPNE Bucharest

    Science.gov (United States)

    Constantin, Florin; Craciun, Liviu Stefan; Constantinescu, Olimpiu; Ghita, Ionica Alina; Ionescu, Cristina; Racolta, Petru Mihai; Straticiuc, Mihai; Vasilescu, Angela; Braic, Viorel; Zoita, Catalin; Kiss, Adrian; Bojin, Dionezie

    2009-03-01

    The development of a positron annihilation spectroscopy laboratory at the HH-NIPNE Bucharest-to be used for material studies and applications was started in the last 10 years. In the framework of a national research project extended over the last 3 years, was designed a low energy positron accelerator, as a high-vacuum dedicated beam line with two options: a 25 mCi 22NaCl source and in line with the NIPNE-cyclotron or a new intense compact cyclotron. The construction of the beam line was planned as a sequence of modules: source- moderator system; magnetical filter for fast positrons in order to select the positrons energies in the range 0.8-1 keV; a modular system for focusing, transport and acceleration of monoenergetic positrons in the energy range 0.8-50 keV and a CDBS analysis chamber. The moderator proposed—is tungsten as a foil of about 3 μm prepared at the Optoelectronics Institute were put into a thermal treatment vacuum chamber and bombarded with electrons from a 100 W electron gun After the treatment, they were tested for changes of elemental composition of the surface and structure at the Polytechnic University. The structure tests were performed on a DRON 3 M diffractometer, with a Co tube (λKα = 1.7903 A)—the angular regions studied were around 34° (1 0 0) and 69° (2 0 0). In the present time, the trajectories of the positron are going to be simulated with dedicated software (an ion and electron optics simulator). For the coincidence measurements (CDBS) set-up we used a home-made 22NaCl source, by separation without carrier from a metallic Mg target irradiated with 12 MeV protons and separated by columnar cation exchange. A home- made biparametric system for CDBS measurements will be reported, also.

  1. Generation and detection of spin polarization in parallel coupled double quantum dots connected to four terminals

    International Nuclear Information System (INIS)

    An, Xing-Tao; Mu, Hui-Ying; Li, Yu-Xian; Liu, Jian-Jun

    2011-01-01

    A four-terminal parallel double quantum dots (QDs) device is proposed to generate and detect the spin polarization in QDs. It is found that the spin accumulation in QDs and the spin-polarized currents in the upper and down leads can be generated when a bias voltage is applied between the left and right leads. It is more interesting that the spin polarization in the QDs can be detected using the upper and down leads. Moreover, the direction and magnitude of the spin polarization in the QDs, and in the upper and down leads can be tuned by the energy levels of QDs and the bias. -- Highlights: → The spin polarization in the quantum dots can be generated and controlled. → The spin polarization in quantum dots can be detected by the nonferromagnetic leads. → The system our studied is a discrete level spin Hall system.

  2. Determination of the spin polarization of a 4He+ ion beam

    International Nuclear Information System (INIS)

    Suzuki, T.; Yamauchi, Y.

    2008-01-01

    It was demonstrated that the spin polarization of a 4 He + ion beam (P He + ) can be determined from the spin dependence of the electron emission in the deexcitation process of spin-polarized He metastable atoms (He*, 2 3 S 1 ) and spin-polarized He + ions on Fe (100) surfaces. On Fe (100) surfaces, both He* and He + deexcite via Auger neutralization, and therefore, the spin asymmetry obtained from spin-polarized He + ion neutralization spectroscopy should be equal to that from spin-polarized metastable He* deexcitation spectroscopy. The spin polarization of He* was obtained from Stern-Gerlach measurements. P He + was finally determined to be 0.19±0.02

  3. Electron-Spin Filters Would Offer Spin Polarization Greater than 1

    Science.gov (United States)

    Ting, David Z.

    2009-01-01

    A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

  4. Slow-positron annihilation analysis on optical degradation of ZnO white paint irradiated by protons

    International Nuclear Information System (INIS)

    Xiao Haiying; Li Chundong; Yang Dezhuang; He Shiyu; Jia Jin; Ye Bangjiao

    2009-01-01

    The optical degradation in ZnO white paint under low energy proton exposure was investigated in terms of slow-positron annihilation spectroscopy. Experimental results show that with increasing proton fluence, the S-parameter of the Doppler broadening spectrum gradually decreases, and the W-parameter increases.The slope plot of the fitting S-W changes under the proton exposure. The decrease of S-parameter can be attributed to a decrease of zinc vacancy content and the formation of quasi-positronium. The quasi-positronium is viewed as a bounded state of a singly ionized oxygen vacancy (trapping an electron) with a positron, the formation of which could reduce the positron annihilation rate and thus the S-parameter. The decrease of S-parameter demonstrates the amount increase of singly ionized oxygen vacancy of ZnO white paint caused by proton irradiation. The change of the S-Wplot slope is related to the transformation of doubly ionized oxygen vacancies into singly ionized oxygen vacancies under proton irradiation. (authors)

  5. RKKY interaction in spin polarized armchair graphene nanoribbon

    Energy Technology Data Exchange (ETDEWEB)

    Rezania, Hamed, E-mail: rezania.hamed@gmail.com; Azizi, Farshad

    2016-11-01

    We present the Ruderman–Kittle–Kasuya–Yosida (RKKY) interaction in the presence of magnetic long range ordered armchair graphene nanoribbon. RKKY interaction as a function of distance between localized moments has been analyzed. It has been shown that a magnetic ordering along the z-axis mediates an anisotropic interaction which corresponds to a XXZ model interaction between two magnetic moments. In order to calculate the exchange interaction along arbitrary direction between two magnetic moments, we should obtain the static spin susceptibilities of armchair graphene nanoribbon. The spin susceptibility components are calculated using Green's function approach for tight binding model Hamiltonian. The effects of spin polarization on the dependence of exchange interaction on distance between moments are investigated via calculating correlation function of spin density operators. Our results show that the chemical potential impacts the spatial behavior of RKKY interaction. - Highlights: • Theoretical calculation of RKKY interaction of armchair graphene nanoribbon. • The investigation of the effect of spin polarization on RKKY interaction. • The investigation of electronic concentration on RKKY interaction of armchair graphene nanoribbon.

  6. Tuning spin-polarized transport in organic semiconductors

    Science.gov (United States)

    Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

    Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

  7. Langmuir instability in partially spin polarized bounded degenerate plasma

    Science.gov (United States)

    Iqbal, Z.; Jamil, M.; Murtaza, G.

    2018-04-01

    Some new features of waves inside the cylindrical waveguide on employing the separated spin evolution quantum hydrodynamic model are evoked. Primarily, the instability of Langmuir wave due to the electron beam in a partially spin polarized degenerate plasma considering a nano-cylindrical geometry is discussed. Besides, the evolution of a new spin-dependent wave (spin electron acoustic wave) due to electron spin polarization effects in the real wave spectrum is elaborated. Analyzing the growth rate, it is found that in the absence of Bohm potential, the electron spin effects or exchange interaction reduce the growth rate as well as k-domain but the inclusion of Bohm potential increases both the growth rate and k-domain. Further, we investigate the geometry effects expressed by R and pon and find that they have opposite effects on the growth rate and k-domain of the instability. Additionally, how the other parameters like electron beam density or streaming speed of beam electrons influence the growth rate is also investigated. This study may find its applications for the signal analysis in solid state devices at nanoscales.

  8. The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

    2014-10-01

    The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

  9. N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

    2004-01-01

    Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

  10. Slow positron studies on single crystals of Ag(100), Ag(111) and Cu(111)

    International Nuclear Information System (INIS)

    Lynn, K.G.

    1979-01-01

    Monoenergetic positrons were employed to examine positronium formation as a function of sample temperature (300 to 1200 K) and incident energy (0 to 5 keV) on Ag(100), Ag(111) and Cu(111) surfaces with submonolayer contamination. In these metals at the higher temperatures, positronium formation becomes the dominant process. A one-dimensional diffusion model is fit to the data as a function of incident energy. Th positronium fraction is found to be an activated process and is identified as detrapping from a surface state and an estimate of the depth of this trap is extracted. The diffusion length is found to be temperature independent before the onset of vacancy trapping. At the higher temperatures vacancy trapping is observed by the decrease in the positron diffusion length at the higher incident voltages. A vacancy formation energy is extracted from the data and is generally lower than the accepted bulk values. 18 references

  11. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  12. Interplay between spin polarization and color superconductivity in high density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2013-01-01

    Here, it is suggested that a four-point interaction of the tensor type may lead to spin polarization in quark matter at high density. It is found that the two-flavor superconducting phase and the spin polarized phase correspond to distinct local minima of a certain generalized thermodynamical pot...

  13. Highly spin-polarized materials and devices for spintronics∗.

    Science.gov (United States)

    Inomata, Koichiro; Ikeda, Naomichi; Tezuka, Nobuki; Goto, Ryogo; Sugimoto, Satoshi; Wojcik, Marek; Jedryka, Eva

    2008-01-01

    The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD) using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co 2 Cr 1 - x Fe x Al (CCFA( x )) and Co 2 FeSi 1 - x Al x (CFSA( x )) and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co 2 FeSi 0.5 Al 0.5 (CFSA(0.5)) Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5) at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD) and nuclear magnetic resonance (NMR) analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001) substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5) electrodes depends on the structure, and is significantly higher for L2 1 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe 2 film deposited on a MgO (001) single crystal substrate, wherein the spinel

  14. SPIN-POLARIZED PHOTOCURRENT THROUGH QUANTUM DOT PHOTODETECTOR

    Directory of Open Access Journals (Sweden)

    Nguyen Van Hieu

    2017-11-01

    Full Text Available The theory of the photocurrent through the photodetector based on a two-level semiconductor quantum dot (QD is presented. The analytical expressions of the matrix elements of the electronic transitions generated by the absorption of the circularly polarized photons are derived in the lowest order of the perturbation theory with respect to the electron tunneling interaction as well as the electron-photon interaction. From these expressions the mechanism of the generation of the spin-polarized of electrons in the photocurrent is evident. It follows that the photodetector based on the two-level semiconductor QD can be used as the model of a source of highly spinpolarized electrons.

  15. Laser driven source of spin polarized atomic deuterium and hydrogen

    International Nuclear Information System (INIS)

    Poelker, M.; Coulter, K.P.; Holt, R.J.

    1993-01-01

    Optical pumping of potassium atoms in the presence of a high magnetic field followed by spin exchange collisions with deuterium (hydrogen) is shown to yield a high flux of spin polarized atomic deuterium (hydrogen). The performance of the laser driven source has been characterized as a function of deuterium (hydrogen) flow rate, potassium density, pump laser power, and magnetic field. Under appropriate conditions, the authors have observed deuterium atomic polarization as high as 75% at a flow rate 4.2x10 17 atoms/second. Preliminary results suggest that high nuclear polarizations are obtained in the absence of weak field rf transitions as a result of a spin temperature distribution that evolves through frequent H-H (D-D) collisions

  16. Optically pumped electron spin polarized targets for use in the production of polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1979-01-01

    The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

  17. Electron ionization and spin polarization control of Fe atom adsorbed graphene irradiated by a femtosecond laser

    International Nuclear Information System (INIS)

    Yu, Dong; Jiang, Lan; Wang, Feng; Li, Xin; Qu, Liangti; Lu, Yongfeng

    2015-01-01

    We investigate the structural properties and ionized spin electrons of an Fe–graphene system, in which the time-dependent density functional theory (TDDFT) within the generalized gradient approximation is used. The electron dynamics, including electron ionization and ionized electron spin polarization, is described for Fe atom adsorbed graphene under femtosecond laser irradiation. The theoretical results show that the electron ionization and ionized electron spin polarization are sensitive to the laser parameters, such as the incident angle and the peak intensity. The spin polarization presents the maximum value under certain laser parameters, which may be used as a source of spin-polarized electrons. - Highlights: • The structural properties of Fe–graphene system are investigated. • The electron dynamics of Fe–graphene system under laser irradiation are described. • The Fe–graphene system may be used as a source of spin-polarized electrons

  18. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Lynn, K.G.; Asoka-Kumar, P.

    1991-01-01

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO 2 /Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO 2 /Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO 2 /Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. This study uses the positrons as a ''sensitive'', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. We also describe a new way of characterizing the changes in the density of the interface states under a low-temperature annealing using positrons. 9 refs., 6 figs

  19. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    Science.gov (United States)

    Lynn, K. G.; Asoka-Kumar, P.

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.

  20. Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Naramoto, H.

    2007-01-01

    In this work, we implanted B + , O + , Al + , and P + ions into ZnO with energy of 50-380 keV and total doses of 4 x 10 15 cm -2 for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B + and Al + -implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O + and P + ions, which are heavier than B + and Al + , the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Spin-polarized states in neutron matter in a strong magnetic field

    International Nuclear Information System (INIS)

    Isayev, A. A.; Yang, J.

    2009-01-01

    Spin-polarized states in neutron matter in strong magnetic fields up to 10 18 G are considered in the model with the Skyrme effective interaction. By analyzing the self-consistent equations at zero temperature, it is shown that a thermodynamically stable branch of solutions for the spin-polarization parameter as a function of density corresponds to the negative spin polarization when the majority of neutron spins are oriented opposite to the direction of the magnetic field. Besides, beginning from some threshold density dependent on magnetic field strength, the self-consistent equations also have two other branches of solutions for the spin-polarization parameter with the positive spin polarization. The free energy corresponding to one of these branches turns out to be very close to that of the thermodynamically preferable branch. As a consequence, in a strong magnetic field, the state with the positive spin polarization can be realized as a metastable state in the high-density region in neutron matter, which, under decreasing density, at some threshold density changes to a thermodynamically stable state with the negative spin polarization.

  2. Spin-polarized transport properties of Fe atomic chain adsorbed on zigzag graphene nanoribbons

    International Nuclear Information System (INIS)

    Zhang, Z L; Chen, Y P; Xie, Y E; Zhang, M; Zhong, J X

    2011-01-01

    The spin-polarized transport properties of Fe atomic chain adsorbed on zigzag graphene nanoribbons (ZGNRs) are investigated using the density-functional theory in combination with the nonequilibrium Green's function method. We find that the Fe chain has drastic effects on spin-polarized transport properties of ZGNRs compared with a single Fe atom adsorbed on the ZGNRs. When the Fe chain is adsorbed on the centre of the ZGNR, the original semiconductor transforms into metal, showing a very wide range of spin-polarized transport. Particularly, the spin polarization around the Fermi level is up to 100%. This is because the adsorbed Fe chain not only induces many localized states but also has effects on the edge states of ZGNR, which can effectively modulate the spin-polarized transports. The spin polarization of ZGNRs is sensitive to the adsorption site of the Fe chain. When the Fe chain is adsorbed on the edge of ZGNR, the spin degeneracy of conductance is completely broken. The spin polarization is found to be more pronounced because the edge state of one edge is destroyed by the additional Fe chain. These results have direct implications for the control of the spin-dependent conductance in ZGNRs with the adsorption of Fe chains.

  3. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    International Nuclear Information System (INIS)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam; Singh, Chandan K.; Kabir, Mukul; Thakur, Gohil S.; Haque, Zeba; Gupta, L. C.; Ganguli, Ashok K.

    2016-01-01

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  4. High spin polarization and the origin of unique ferromagnetic ground state in CuFeSb

    Energy Technology Data Exchange (ETDEWEB)

    Sirohi, Anshu; Saha, Preetha; Gayen, Sirshendu; Gaurav, Abhishek; Jyotsna, Shubhra; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli PO 140306 (India); Singh, Chandan K.; Kabir, Mukul [Department of Physics, Indian Institute of Science Education and Research, Pune 411008 (India); Thakur, Gohil S.; Haque, Zeba; Gupta, L. C. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Ganguli, Ashok K. [Department of Chemistry, Indian Institute of Technology, New Delhi 110016 (India); Institute of Nano Science & Technology, Mohali 160064 (India)

    2016-06-13

    CuFeSb is isostructural to the ferro-pnictide and chalcogenide superconductors and it is one of the few materials in the family that are known to stabilize in a ferromagnetic ground state. Majority of the members of this family are either superconductors or antiferromagnets. Therefore, CuFeSb may be used as an ideal source of spin polarized current in spin-transport devices involving pnictide and the chalcogenide superconductors. However, for that the Fermi surface of CuFeSb needs to be sufficiently spin polarized. In this paper we report direct measurement of transport spin polarization in CuFeSb by spin-resolved Andreev reflection spectroscopy. From a number of measurements using multiple superconducting tips we found that the intrinsic transport spin polarization in CuFeSb is high (∼47%). In order to understand the unique ground state of CuFeSb and the origin of large spin polarization at the Fermi level, we have evaluated the spin-polarized band structure of CuFeSb through first principles calculations. Apart from supporting the observed 47% transport spin polarization, such calculations also indicate that the Sb-Fe-Sb angles and the height of Sb from the Fe plane are strikingly different for CuFeSb than the equivalent parameters in other members of the same family thereby explaining the origin of the unique ground state of CuFeSb.

  5. Spin-polarization reversal at the interface between benzene and Fe(100)

    KAUST Repository

    Goumri-Said, Souraya

    2013-01-03

    The spin-polarization at the interface between Fe(100) and a benzene is investigated theoretically using density functional theory for two positions of the organic molecule: planar and perpendicular with respect to the substrate. The electronic and magnetic properties as well as the spin-polarization close to the Fermi level strongly depend on the benzene position on the iron surface. An inversion of the spin-polarization is induced by p-d hybridization and charge transfer from the iron to the carbon sites in both configurations.

  6. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    Energy Technology Data Exchange (ETDEWEB)

    Baranowski, M.; Misiewicz, J. [Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-10-21

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  7. Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

    KAUST Repository

    Zhang, Qian; Mi, Wenbo; Wang, Xiaocha; Wang, Xuhui

    2015-01-01

    We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

  8. Nuclear reactivity indices in the context of spin polarized density functional theory

    International Nuclear Information System (INIS)

    Cardenas, Carlos; Lamsabhi, Al Mokhtar; Fuentealba, Patricio

    2006-01-01

    In this work, the nuclear reactivity indices of density functional theory have been generalized to the spin polarized case and their relationship to electron spin polarized indices has been established. In particular, the spin polarized version of the nuclear Fukui function has been proposed and a finite difference approximation has been used to evaluate it. Applications to a series of triatomic molecules demonstrate the ability of the new functions to predict the geometrical changes due to a change in the spin multiplicity. The main equations in the different ensembles have also been presented

  9. Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

    KAUST Repository

    Zhang, Qian

    2015-05-27

    We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

  10. Spin-polarization reversal at the interface between benzene and Fe(100)

    KAUST Repository

    Goumri-Said, Souraya; Benali Kanoun, Mohammed; Manchon, Aurelien; Schwingenschlö gl, Udo

    2013-01-01

    The spin-polarization at the interface between Fe(100) and a benzene is investigated theoretically using density functional theory for two positions of the organic molecule: planar and perpendicular with respect to the substrate. The electronic and magnetic properties as well as the spin-polarization close to the Fermi level strongly depend on the benzene position on the iron surface. An inversion of the spin-polarization is induced by p-d hybridization and charge transfer from the iron to the carbon sites in both configurations.

  11. Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

    Science.gov (United States)

    Bode, Matthias

    2012-01-01

    The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

  12. Spin polarization and magnetic effects in radical reactions

    International Nuclear Information System (INIS)

    Salikhov, K.M.; Molin, Yu.N.; Sagdeev, R.Z.; Buchachenko, A.L.

    1984-01-01

    Studies on the effects of chemically induced dynamic nuclear and electron polarizations (CIDNP and CIDEP), and magnetic effects in radical reactions, have given rise to a new rapidly-progressing field of chemical physics. It came into being about ten years ago and has been attracting the ever-growing attention of researchers in related areas. The present book is a fairly all-embracing review of the state of affairs in this field. The book presents the physical background (both theoretical and experimental) of CIDNP and CIDEP, of the effects of an external magnetic field and magnetic nuclear moment (magnetic isotope effects) on radical reactions in solutions. Great attention has been paid to the application of chemical spin polarization and magnetic effects to solving various problems of chemical kinetics, structural chemistry, molecular physics, magnetobiology, and radiospectroscopy. The book will be useful for physicists, chemists and biologists employing CIDNP, CIDEP and magnetic effects in their investigations, as well as for researchers in related fields of chemical physics. The book can be also recommended for postgraduates and senior undergraduate students. (Auth.)

  13. Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

    KAUST Repository

    Morari, C.

    2017-11-20

    We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of the half-metallic NiMnSb in the scattering region, using density functional theory (DFT) methods. For a single NiMnSb unit the transmission function displays a spin polarization of around 50% in a window of 1eV centered around the Fermi level. By increasing the number of layers, an almost complete spin polarization of the transmission is obtained in this energy range. Supplementing the DFT calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin polarization of the conduction electron transmission, which suggests that the hybridized interface and many-body induced states are localized.

  14. Peculiarities of spin polarization inversion at a thiophene/cobalt interface

    KAUST Repository

    Wang, Xuhui; Manchon, Aurelien; Schwingenschlö gl, Udo; Zhu, Zhiyong

    2013-01-01

    We perform ab initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a

  15. Modelization of nanospace interaction involving a ferromagnetic atom: a spin polarization effect study by thermogravimetric analysis.

    Science.gov (United States)

    Santhanam, K S V; Chen, Xu; Gupta, S

    2014-04-01

    Ab initio studies of ferromagnetic atom interacting with carbon nanotubes have been reported in the literature that predict when the interaction is strong, a higher hybridization with confinement effect will result in spin polarization in the ferromagnetic atom. The spin polarization effect on the thermal oxidation to form its oxide is modeled here for the ferromagnetic atom and its alloy, as the above studies predict the 4s electrons are polarized in the atom. The four models developed here provide a pathway for distinguishing the type of interaction that exists in the real system. The extent of spin polarization in the ferromagnetic atom has been examined by varying the amount of carbon nanotubes in the composites in the thermogravimetric experiments. In this study we report the experimental results on the CoNi alloy which appears to show selective spin polarization. The products of the thermal oxidation has been analyzed by Fourier Transform Infrared Spectroscopy.

  16. Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Department of Physics, Wuhan University (China); Maekawa, M.; Kawasuso, A.; Naramoto, H. [Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, Gunma (Japan)

    2007-07-01

    In this work, we implanted B{sup +}, O{sup +}, Al{sup +}, and P{sup +} ions into ZnO with energy of 50-380 keV and total doses of 4 x 10{sup 15} cm{sup -2} for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B{sup +} and Al{sup +}-implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O{sup +} and P{sup +} ions, which are heavier than B{sup +} and Al{sup +}, the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    Our experimental efforts over the past 5 years have been aimed at cazrying out ICF shots with spin-polarized 0 fuel. We successfully prepared polarized 0 in HD, and solved the problems of loading target shells with our carefully prepared isotopic -rnixt.l.l?-es, polarizing them so that the 0 polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted fusion chamber. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was dus to mal-timing or insufficient retraction rate of OMEGA'S fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spits of this, all alements of the complex experiment we originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods we developed are being utilized on the ICF upgrades at Rochester and at Livermore. In addition to the solution of the interface problems, we obtained novel results on polymer shell characteristics at low temperatures, and continuation of these experiments is c = ently supported by KLUP. Extensive additional mappings were ca=ied out of nuclear spin relaxation rates of H and D in solid HD in the temperature-magnetic field rangs of 0.01 to 4.2K and 0 - 13 Tesla. New phenomena were discovered, such as association of impurity clustering with very low temperature motion, and inequality of the growth-rate and decay-rate of the magnetization

  18. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    The experimental efforts over the past 5 years have been aimed at carrying out ICF shots with spin-polarized D fuel. The authors successfully prepared polarized D in HD, and solved the problems of loading target shells with their carefully prepared isotopic mixtures, polarizing them so that the D polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted into the OMEGA fusion chamber. A principal concern during this past year was overcoming difficulties encountered in maintaining the integrity of the fragile cold target during the multitude of cold-transfers required for the experiment. These difficulties arose from insufficient rigidity of the cold transfer systems, which were constrained to be of small diameter by the narrow central access bore of the dilution refrigerator, and were exacerbated by the multitude of required target shell manipulations between different environments, each with different coupling geometry, including target shell permeation, polarization, storage, transport, retrieval and insertion into OMEGA. The authors did solve all of these problems, and were able to position a cold, high density but unpolarized target with required precision in OMEGA. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was due to mal-timing or insufficient retraction rate of OMEGA's fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spite of this, all elements of the complex experiment the authors originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods they developed are being utilized on the ICF upgrades at Rochester and at Livermore

  19. Estimate of spin polarization for PEP using generalized transformation matrices

    International Nuclear Information System (INIS)

    Chao, A.W.

    1978-04-01

    The spin polarization for PEP has been estimated before by using simplified models. The main difficulty in the previous estimates is that the strength of depolarization effects caused by various electromagnetic field errors could not be specified accurately. To overcome this difficulty, a matrix formalism for depolarization calculation was developed recently. One basic ingredient of this theory is to represent an electron by an 8-dimensional state vector, X = (x,x',y,y',z,δ,α,β) where the first six coordinates are the usual transverse and longitudinal canonical coordinates, while α and β are the two components of the electron's spin vector perpendicular to the equilibrium direction of polarization /cflx n/. The degree of depolarization is specified by 1/2(α 2 + β 2 ). The state vector X will be transformed by an 8 x 8 matrix as the electron passes through a beam-line element such as a bending magnet or an rf cavity. From any position s, one multiplies successively the 8 x 8 matrices around one revolution of the storage ring to obtain the total transformation T(s). Any impulse perturbation ΔX to the electron's state vector occurring at s will be transformed repeatedly by T(s) as the electron circulates around the storage ring. Another basic ingredient is to decompose ΔX into 8 eigenstate components with eigenvectors determined from T(s). Six of these eigenstate components corresponding to the space states will be damped out by the usual radiation damping. The projections of ΔX onto the remaining two spin eigenstates are directly related to the loss of polarization due to the impulse perturbation ΔX. Depolarization effects can thus be calculated directly once all perturbations are specified. 7 refs., 4 figs

  20. The spin polarized linear response from density functional theory: Theory and application to atoms

    Energy Technology Data Exchange (ETDEWEB)

    Fias, Stijn, E-mail: sfias@vub.ac.be; Boisdenghien, Zino; De Proft, Frank; Geerlings, Paul [General Chemistry (ALGC), Vrije Universiteit Brussel (Free University Brussels – VUB), Pleinlaan 2, 1050 Brussels (Belgium)

    2014-11-14

    Within the context of spin polarized conceptual density functional theory, the spin polarized linear response functions are introduced both in the [N, N{sub s}] and [N{sub α}, N{sub β}] representations. The mathematical relations between the spin polarized linear response functions in both representations are examined and an analytical expression for the spin polarized linear response functions in the [N{sub α}, N{sub β}] representation is derived. The spin polarized linear response functions were calculated for all atoms up to and including argon. To simplify the plotting of our results, we integrated χ(r, r′) to a quantity χ(r, r{sup ′}), circumventing the θ and ϕ dependence. This allows us to plot and to investigate the periodicity throughout the first three rows in the periodic table within the two different representations. For the first time, χ{sub αβ}(r, r{sup ′}), χ{sub βα}(r, r{sup ′}), and χ{sub SS}(r, r{sup ′}) plots have been calculated and discussed. By integration of the spin polarized linear response functions, different components to the polarisability, α{sub αα}, α{sub αβ}, α{sub βα}, and α{sub ββ} have been calculated.

  1. Study on quantum beam science by using ultra short electron pulse, FEL, and slow positron beam at ISIR (Institute of Science and Industrial Research), Osaka University

    International Nuclear Information System (INIS)

    Yoshida, Y.; Tagawa, S.; Okuda, S.; Honda, Y.; Kimura, N.; Yamamoto, T.; Isoyama, G.

    1995-01-01

    Three projects for quantum beam science, an ultra fast electron pulse, a free electron laser, and a slow positron beam, has been started by using 38 MeV L-band and 150 MeV S-band linacs at ISIR in Osaka University. Both study on the production of three beams and study on quantum material science by using three beams will play an important role in the beam science. (author)

  2. The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy

    International Nuclear Information System (INIS)

    Baker, J.A.; Coleman, P.G.

    1989-01-01

    Experiments are described in which the controlled implantation of mono-energetic positrons is used to gain information non-destructively on epilayer and interface defects in semiconductor heterostructures. The implantation, and hence annihilation, profile is changed by varying the incident positron energy from 1 to 35 keV. Characteristics of the positron state at the annihilation site are reflected in the width of the measure Doppler-broadened annihilation line. The fractions of positrons annihilating from each state are deduced by solving the steady-state diffusion equation. The application of the technique is illustrated by application to a series of SiO 2 -Si samples. (author)

  3. Study of surface layer assessment of solids by ultra-slow and short-pulsed positron beams

    International Nuclear Information System (INIS)

    Suzuki, Ryouichi; Ohdaira, Toshiyuki; Mikado, Tomohisa; Yamada, Kawakatsu

    2004-01-01

    Thin films of insulators with low dielectric constant, as a candidate for next generation LSI (large scale integration), were assessed by two dimensional positron life time and wave height measurements using variable incident energy and also short pulsed positron beams. Linkages and openness of nano-scale voids in the films were evaluated by the measurements. Amorphous SiO 2 films were compared with SiCOH films synthesized by plasma CVD (Chemical Vapor Deposition) by measurements of the correlation between positron lifetime and momentum using short-pulsed positron beams. From the measurements, many hydrocarbons were found on void surface of SiCOH films. Positron lifetime measurement gives information about void sizes, and Doppler broadening due to annihilation γ-rays offers electron momentum distribution, which is a counterpart of positron annihilation. Two γ-rays are emitted on the positron annihilation. Coincident measurements of these two γ-rays provide the correlation spectra between positron lifetime and momentum. An instrument for positron annihilation excitation Auger electron spectroscopy (PAES) was improved, and a time-of-flight (TOF) PAES instrument was developed. Double counting rate and high resolution, compared with a conventional Auger electron spectrometer, were attained in elementary analysis using above TOF-PAES instrument. (Y. Kazumata)

  4. Spin polarized and density modulated phases in symmetric electron-electron and electron-hole bilayers.

    Science.gov (United States)

    Kumar, Krishan; Moudgil, R K

    2012-10-17

    We have studied symmetric electron-electron and electron-hole bilayers to explore the stable homogeneous spin phase and the feasibility of inhomogeneous charge-/spin-density ground states. The former is resolved by comparing the ground-state energies in states of different spin polarizations, while the latter is resolved by searching for a divergence in the wavevector-dependent static charge/spin susceptibility. For this endeavour, we have used the dielectric approach within the self-consistent mean-field theory of Singwi et al. We find that the inter-layer interactions tend to change an abrupt spin-polarization transition of an isolated layer into a nearly gradual one, even though the partially spin-polarized phases are not clearly stable within the accuracy of our calculation. The transition density is seen to decrease with a reduction in layer spacing, implying a suppression of spin polarization by inter-layer interactions. Indeed, the suppression shows up distinctly in the spin susceptibility computed from the spin-polarization dependence of the ground-state energy. However, below a critical layer spacing, the unpolarized liquid becomes unstable against a charge-density-wave (CDW) ground state at a density preceding full spin polarization, with the transition density for the CDW state increasing on further reduction in the layer spacing. Due to attractive e-h correlations, the CDW state is found to be more pronounced in the e-h bilayer. On the other hand, the static spin susceptibility diverges only in the long-wavelength limit, which simply represents a transition to the homogeneous spin-polarized phase.

  5. Dual descriptors within the framework of spin-polarized density functional theory.

    Science.gov (United States)

    Chamorro, E; Pérez, P; Duque, M; De Proft, F; Geerlings, P

    2008-08-14

    Spin-polarized density functional theory (SP-DFT) allows both the analysis of charge-transfer (e.g., electrophilic and nucleophilic reactivity) and of spin-polarization processes (e.g., photophysical changes arising from electron transitions). In analogy with the dual descriptor introduced by Morell et al. [J. Phys. Chem. A 109, 205 (2005)], we introduce new dual descriptors intended to simultaneously give information of the molecular regions where the spin-polarization process linking states of different multiplicity will drive electron density and spin density changes. The electronic charge and spin rearrangement in the spin forbidden radiative transitions S(0)-->T(n,pi(*)) and S(0)-->T(pi,pi(*)) in formaldehyde and ethylene, respectively, have been used as benchmark examples illustrating the usefulness of the new spin-polarization dual descriptors. These quantities indicate those regions where spin-orbit coupling effects are at work in such processes. Additionally, the qualitative relationship between the topology of the spin-polarization dual descriptors and the vertical singlet triplet energy gap in simple substituted carbene series has been also discussed. It is shown that the electron density and spin density rearrangements arise in agreement with spectroscopic experimental evidence and other theoretical results on the selected target systems.

  6. Injection and detection of a spin-polarized current in a light-emitting diode

    Science.gov (United States)

    Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

    1999-12-01

    The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

  7. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  8. Unique spin-polarized transmission effects in a QD ring structure

    Science.gov (United States)

    Hedin, Eric; Joe, Yong

    2010-10-01

    Spintronics is an emerging field in which the spin of the electron is used for switching purposes and to communicate information. In order to obtain spin-polarized electron transmission, the Zeeman effect is employed to produce spin-split energy states in quantum dots which are embedded in the arms of a mesoscopic Aharonov-Bohm (AB) ring heterostructure. The Zeeman splitting of the QD energy levels can be induced by a parallel magnetic field, or by a perpendicular field which also produces AB-effects. The combination of these effects on the transmission resonances of the structure is studied analytically and several parameter regimes are identified which produce a high degree of spin-polarized output. Contour and line plots of the weighted spin polarization as a function of electron energy and magnetic field are presented to visualize the degree of spin-polarization. Taking advantage of these unique parameter regimes shows the potential promise of such devices for producing spin-polarized currents.

  9. Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Dlimi, S., E-mail: kaaouachi21@yahoo.fr; Kaaouachi, A. El, E-mail: kaaouachi21@yahoo.fr; Limouny, L., E-mail: kaaouachi21@yahoo.fr; Sybous, A.; Narjis, A.; Errai, M.; Daoudi, E. [Research Group ESNPS , Physics department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); Idrissi, H. El [Faculté des Sciences et Techniques de Mohammedia, Département de physique. BP 146 Quartier Yasmina Mohammedia (Morocco); Zatni, A. [Laboratoire MSTI. Ecole de technologied' Agadir, B.P33/S Agadir (Morocco)

    2014-01-27

    In the ballistic regime where k{sub B}Tτ / ħ ≥1, the temperature dependence of the metallic conductivity in a two-dimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization, but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero magnetic field case. The analysis of the degree of suppression can distinguish between screening and interaction-based theories. We show that in a fully polarized spin state, the effects of disorder are dominant and approach a strong localization regime, which is contrary to the behavior of 2D electron systems in a weakly disordered unpolarized state. It was found that the elastic relaxation time correction, depending on the temperature, changed significantly with the degree of spin polarization, to reach a minimum just below the start of the spin-polarized integer, where the conductivity is practically independent of temperature.

  10. Production of spin-polarized unstable nuclei by using polarized electron capture process

    International Nuclear Information System (INIS)

    Shimizu, S.

    1998-01-01

    Measurements of emitted radiation from spin polarized nuclei are used to get information on electromagnetic moment of ground state unstable nuclei together with spin or parity state of excited states of their decayed (daughter) nuclei. These data are known to be useful for experimental investigation into the structure of unstable nuclei far from the stability line. The present study aims to establish a general method applicable to 11 Be and 16 N nuclei. To produce spin polarization, a new method in which the electron spin polarization of Rb is firstly produced by laser pumping, then the electron is transferred to the unstable nuclear beam (RNB) when they passes through the Rb vapor is proposed. Finally the polarized RNB will be implanted into superfluid helium to remain with a long spin-relaxation time. Future experimental set up for the above measurement adopted in the available radioactive nuclear beam facilities is briefly described. (Ohno, S.)

  11. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  12. Nuclear spin polarized H and D by means of spin-exchange optical pumping

    Science.gov (United States)

    Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

    1998-01-01

    Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

  13. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  14. Design and performance of a spin-polarized electron energy loss spectrometer with high momentum resolution

    Energy Technology Data Exchange (ETDEWEB)

    Vasilyev, D.; Kirschner, J. [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2016-08-15

    We describe a new “complete” spin-polarized electron energy loss spectrometer comprising a spin-polarized primary electron source, an imaging electron analyzer, and a spin analyzer of the “spin-polarizing mirror” type. Unlike previous instruments, we have a high momentum resolution of less than 0.04 Å{sup −1}, at an energy resolution of 90-130 meV. Unlike all previous studies which reported rather broad featureless data in both energy and angle dependence, we find richly structured spectra depending sensitively on small changes of the primary energy, the kinetic energy after scattering, and of the angle of incidence. The key factor is the momentum resolution.

  15. Effects of spin-polarized current on pulse field-induced precessional magnetization reversal

    Directory of Open Access Journals (Sweden)

    Guang-fu Zhang

    2012-12-01

    Full Text Available We investigate effects of a small DC spin-polarized current on the pulse field-induced precessional magnetization reversal in a thin elliptic magnetic element by micromagnetic simulations. We find that the spin-polarized current not only broadens the time window of the pulse duration, in which a successful precessional reversal is achievable, but also significantly suppresses the magnetization ringing after the reversal. The pulse time window as well as the decay rate of the ringing increase with increasing the current density. When a spin-polarized current with 5 MA/cm2 is applied, the time window increases from 80 ps to 112 ps, and the relaxation time of the ringing decreases from 1.1 ns to 0.32 ns. Our results provide useful information to achieve magnetic nanodevices based on precessional switching.

  16. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  17. Spin-Polarized Hybridization at the interface between different 8-hydroxyquinolates and the Cr(001) surface

    Science.gov (United States)

    Wang, Jingying; Deloach, Andrew; Dougherty, Daniel B.; Dougherty Lab Team

    Organic materials attract a lot of attention due to their promising applications in spintronic devices. It is realized that spin-polarized metal/organic interfacial hybridization plays an important role to improve efficiency of organic spintronic devices. Hybridized interfacial states help to increase spin injection at the interface. Here we report spin-resolved STM measurements of single tris(8-hydroxyquinolinato) aluminum molecules adsorbed on the antiferromagnetic Cr(001). Our observations show a spin-polarized interface state between Alq3 and Cr(001). Tris(8-hydroxyquinolinato) chromium has also been studied and compared with Alq3, which exhibits different spin-polarized hybridization with the Cr(001) surface state than Alq3. We attribute the differences to different character of molecular orbitals in the two different quinolates.

  18. Spin Dynamics in Highly Spin Polarized Co1-xFexS2

    Science.gov (United States)

    Hoch, Michael J. R.; Kuhns, Philip L.; Moulton, William G.; Reyes, Arneil P.; Lu, Jun; Wang, Lan; Leighton, Chris

    2006-09-01

    Highly spin polarized or half-metallic systems are of considerable current interest because of their potential for spin injection in spintronics applications. The ferromagnet (FM) CoS2 is close to being a half-metal. Recent theoretical and experimental work has shown that the alloys Co1-xFexS2 (0.07 < x < 0.9) are highly spin polarized at low temperatures. The Fe concentration may be used to tune the spin polarization. Using 59Co FM- NMR we have investigated the spin dynamics in this family of alloys and have obtained information on the evolution of the d-band density of states at the Fermi level with x in the range 0 to 0.3. The results are compared with available theoretical predictions.

  19. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  20. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  1. Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

    International Nuclear Information System (INIS)

    Rastei, M V; Bucher, J P

    2006-01-01

    A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

  2. Spontaneous spin-polarization and phase transition in the relativistic approach

    International Nuclear Information System (INIS)

    Maruyama, Tomoyuki; Tatsumi, Toshitaka

    2001-01-01

    We study the spin-polarization mechanism in the highly dense nuclear matter with the relativistic mean-field approach. In the relativistic Hartree-Fock framework we find that there are two kinds of spin-spin interaction channels, which are the axial-vector and tensor exchange ones. If each interaction is strong and different sign, the system loses the spherical symmetry and holds the spin-polarization in the high-density region. When the axial-vector interaction is negative enough, the system holds ferromagnetism. (author)

  3. Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

    International Nuclear Information System (INIS)

    Peter, A. John; Lee, Chang Woo

    2012-01-01

    Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

  4. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bezerra, Anibal T., E-mail: anibal@df.ufscar.br; Farinas, Paulo F.; Studart, Nelson [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil); Castelano, Leonardo K. [Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP (Brazil); Degani, Marcos H.; Maialle, Marcelo Z. [Faculdade de Ciências Aplicadas, Universidade Estadual de Campinas, 13484-350 Limeira, SP (Brazil); DISSE - Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutores, CNPq/MCT, Rio de Janeiro, RJ (Brazil)

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  5. A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

    Science.gov (United States)

    Mandal, Sumit; Saha, Shyamal K.

    2014-10-01

    Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing ID/IG ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest ID/IG, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

  6. Hardness and softness reactivity kernels within the spin-polarized density-functional theory

    International Nuclear Information System (INIS)

    Chamorro, Eduardo; De Proft, Frank; Geerlings, Paul

    2005-01-01

    Generalized hardness and softness reactivity kernels are defined within a spin-polarized density-functional theory (SP-DFT) conceptual framework. These quantities constitute the basis for the global, local (i.e., r-position dependent), and nonlocal (i.e., r and r ' -position dependents) indices devoted to the treatment of both charge-transfer and spin-polarization processes in such a reactivity framework. The exact relationships between these descriptors within a SP-DFT framework are derived and the implications for chemical reactivity in such context are outlined

  7. Peculiarities of spin polarization inversion at a thiophene/cobalt interface

    KAUST Repository

    Wang, Xuhui

    2013-03-20

    We perform ab initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule. The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

  8. Magnetic x-ray circular dichroism in spin-polarized photoelectron diffraction

    International Nuclear Information System (INIS)

    Waddill, G.D.; Tobin, J.G.

    1994-01-01

    The first structural determination with spin-polarized, energy-dependent photoelectron diffraction using circularly-polarized x-rays is reported for Fe films on Cu(001). Circularly-polarized x-rays produced spin-polarized photoelectrons from the Fe 2p doublet, and intensity asymmetries in the 2p 3/2 level are observed. Fully spin-specific multiple scattering calculations reproduced the experimentally-determined energy and angular dependences. A new analytical procedure which focuses upon intensity variations due to spin-dependent diffraction is introduced. A sensitivity to local geometric and magnetic structure is demonstrated

  9. Beamline for Photoemission Spectromicroscopy and Spin Polarized Microscopy with Slow Electrons at CESLAB

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk

    2008-01-01

    Roč. 15, č. 1 (2008), s. 111-112 ISSN 1210-8529 Institutional research plan: CEZ:AV0Z20650511 Keywords : CESLAB * beamline * LEEM/PEEM Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  10. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  11. The Utilization of Spin Polarized Photoelectron Spectroscopy as a Probe of Electron Correlation with an Ultimate Goal of Pu

    International Nuclear Information System (INIS)

    Tobin, James; Yu, Sung; Chung, Brandon; Morton, Simon; Komesu, Takashi; Waddill, George

    2008-01-01

    We are developing the technique of spin-polarized photoelectron spectroscopy as a probe of electron correlation with the ultimate goal of resolving the Pu electronic structure controversy. Over the last several years, we have demonstrated the utility of spin polarized photoelectron spectroscopy for determining the fine details of the electronic structure in complex systems such as those shown in the paper.

  12. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  13. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  14. Spin polarization in top pair production in association with two photons at NLO+PS

    CERN Document Server

    Luisoni, Gionata

    2018-01-01

    This talk focuses on the impact of top-quark spin polarization effects in Higgs boson production in association with a top-quark pair, where the Higgs boson decays to two photons. Predictions for the signal are compared with direct top-quark pair production in association with two photons at NLO+PS.

  15. Cross sections and spin polarizations of electrons elastically scattered from oriented molecules (CH3I)

    International Nuclear Information System (INIS)

    Fink, M.; Ross, A.W.; Fink, R.J.

    1989-01-01

    Elastic differential cross sections and spin polarizations for electrons elastically scattered from CH 3 I are calculated using the independent atom model. Three molecular orientations with respect to the incident electron wavevector are considered - first, the molecule is oriented randomly, second, the electron wave front and molecular bond are parallel, and third, the wavefront and the bond axis are perpendicular. It will be seen to what extent orientational averaging weakens features of the cross section and spin polarization. The calculations show that cross section and spin polarization measurements are a possible tool for determining the degree of molecular orientation. There is no degeneracy between I-C and C-I in cross section and spin polarization measurements. The results presented here for 200 eV and 600 eV electrons scattered by CH 3 I should be considered as a case study and it should be possible to find molecules and electron energies for which even more dramatic differences between the various orientations between the molecules and the electrons can be expected. (orig.)

  16. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  17. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  18. Transient charging and discharging of spin-polarized electrons in a quantum dot

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Leao, S.A.; Gester, R. M.

    2007-01-01

    We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green ...

  19. On the theory of elastic scattering of spin polarized electrons from ferromagnets

    International Nuclear Information System (INIS)

    Helman, J.S.

    1984-01-01

    The first Born approximation supposedly inadequate for dealing with elastic scattering of spin polarized electrons on ferromagnets is reconsidered. It is found that when used in conjunction with a spin dependent pseudopotential, it can describe the gross features of the ansisotropy. (Author) [pt

  20. On the theory of elastic scattering of spin polarized electrons from ferromagnets

    International Nuclear Information System (INIS)

    Helman, J.S.; Baltenspenger, W.

    1984-01-01

    The first Born approximation supposedly inadequate for dealing with the elastic scattering of spin polarized electrons on ferromagnets is reconsidered. It is found that when used in conjunction with a spin dependent pseudo-potential, it can describe the gross features of the anisotropy. (author) [pt

  1. Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

    NARCIS (Netherlands)

    Prins, M.W.J.; Jansen, R.; Kempen, van H.

    1996-01-01

    We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

  2. Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

    KAUST Repository

    Morari, C.; Appelt, W. H.; Ö stlin, A.; Prinz-Zwick, A.; Schwingenschlö gl, Udo; Eckern, U.; Chioncel, L.

    2017-01-01

    calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin

  3. Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

    2001-01-01

    Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

  4. Spin polarization in top pair production in association with two photons at NLO+PS

    CERN Document Server

    Luisoni, Gionata

    2017-01-01

    This talk focuses on the impact of top-quark spin polarization effects in Higgs boson production in association with a top-quark pair, where the Higgs boson decays to two photons. Predictions for the signal are compared with direct top-quark pair production in association with two photons at NLO+PS.

  5. Spin-polarized versus chiral condensate in quark matter at finite temperature and density

    DEFF Research Database (Denmark)

    Matsuoka, Hiroaki; Tsue, Yasuhiko; da Providencia, Joao

    2016-01-01

    It is shown that the spin-polarized condensate appears in quark matter at high baryon density and low temperature due to the tensor-type four-point interaction in the Nambu-Jona-Lasiniotype model as a low-energy effective theory of quantum chromodynamics. It is indicated within this low-energy ef...

  6. Spin polarization versus color–flavor locking in high-density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2015-01-01

    It is shown that spin polarization with respect to each flavor in three-flavor quark matter occurs instead of color–flavor locking at high baryon density by using the Nambu–Jona-Lasinio model with four-point tensor-type interaction. Also, it is indicated that the order of phase transition between...

  7. The HERA polarimeter and the first observation of electron spin polarization at HERA

    International Nuclear Information System (INIS)

    Barber, D.P.; Bremer, H.D.; Boege, M.; Brinkmann, R.; Gianfelice-Wendt, E.; Kaiser, H.; Klanner, R.; Lewin, H.C.; Meyners, N.; Vogel, W.; Brueckner, W.; Buescher, C.; Dueren, M.; Gaul, H.G.; Muecklich, A.; Neunreither, F.; Rith, K.; Scholz, C.; Steffens, E.; Veltri, M.; Wander, W.; Zapfe, K.; Zetsche, F.; Chapman, M.; Milner, R.; Coulter, K.; Delheij, P.P.J.; Haeusser, O.; Henderson, R.; Levy, P.; Vetterli, M.; Gressmann, H.; Janke, T.; Micheel, B.; Westphal, D.; Kaiser, R.; Losev, L.; Nowak, W.D.

    1992-10-01

    Electron spin polarizations of about 8% were observed at HERA in November 1991. In runs during 1992 utilizing special orbit corrections, polarization values close to 60% have been achieved. In this paper the polarimeter, the machine conditions, the data analysis, the first results and plans for future measurements are described. (orig.)

  8. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  9. Spin-polarized ground state and exact quantization at ν=5/2

    Science.gov (United States)

    Pan, Wei

    2002-03-01

    The nature of the even-denominator fractional quantum Hall effect at ν=5/2 remains elusive, in particular, its ground state spin-polarization. An earlier, so-called "hollow core" model arrived at a spin-unpolarized wave function. The more recent calculations based on a model of BCS-like pairing of composite fermions, however, suggest that its ground state is spin-polarized. In this talk, I will first review the earlier experiments and then present our recent experimental results showing evidence for a spin-polarized state at ν=5/2. Our ultra-low temperature experiments on a high quality sample established the fully developed FQHE state at ν=5/2 as well as at ν=7/3 and 8/3, manifested by a vanishing R_xx and exact quantization of the Hall plateau. The tilted field experiments showed that the added in-plane magnetic fields not only destroyed the FQHE at ν=5/2, as seen before, but also induced an electrical anisotropy, which is now interpreted as a phase transition from a paired, spin-polarized ν=5/2 state to a stripe phase, not unlike the ones at ν=9/2, 11/2, etc in the N > 1 higher Landau levels. Furthermore, in the experiments on the heterojunction insulated-gate field-effect transistors (HIGFET) at dilution refrigerator temperatures, a strong R_xx minimum and a concomitant developing Hall plateau were observed at ν=5/2 in a magnetic field as high as 12.6 Tesla. This and the subsequent density dependent studies of its energy gap largely rule out a spin-singlet state and point quite convincingly towards a spin-polarized ground state at ν=5/2.

  10. Spin-polarized hydrogen Rydberg time-of-flight: Experimental measurement of the velocity-dependent H atom spin-polarization

    International Nuclear Information System (INIS)

    Broderick, Bernadette M.; Lee, Yumin; Doyle, Michael B.; Chernyak, Vladimir Y.; Suits, Arthur G.; Vasyutinskii, Oleg S.

    2014-01-01

    We have developed a new experimental method allowing direct detection of the velocity dependent spin-polarization of hydrogen atoms produced in photodissociation. The technique, which is a variation on the H atom Rydberg time-of-flight method, employs a double-resonance excitation scheme and experimental geometry that yields the two coherent orientation parameters as a function of recoil speed for scattering perpendicular to the laser propagation direction. The approach, apparatus, and optical layout we employ are described here in detail and demonstrated in application to HBr and DBr photolysis at 213 nm. We also discuss the theoretical foundation for the approach, as well as the resolution and sensitivity we achieve

  11. Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy

    International Nuclear Information System (INIS)

    Akazaki, T.; Munekata, H.; Yokoyama, T.; Tanaka, Y.; Takayanagi, H.

    2011-01-01

    Spin-polarized carrier transport across Nb/p-(In,Mn)As junctions has been studied. Suppressions of conductance in the superconductor sub-gap region and conductance peaks at the bias voltage around the edge of the sub-gap are observed. These features are well reproduced by a newly modified BTK model including both spin polarization and the inverse proximity effect. The value of spin polarization in p-(In,Mn)As extracted by the calculation is P = 0.725 at 0.5 K with Z = 0.25

  12. Coupled spin and charge collective excitations in a spin polarized electron gas

    International Nuclear Information System (INIS)

    Marinescu, D.C.; Quinn, J.J.; Yi, K.S.

    1997-01-01

    The charge and longitudinal spin responses induced in a spin polarized quantum well by a weak electromagnetic field are investigated within the framework of the linear response theory. The authors evaluate the excitation frequencies for the intra- and inter-subband transitions of the collective charge and longitudinal spin density oscillations including many-body corrections beyond the random phase approximation through the spin dependent local field factors, G σ ± (q,ω). An equation-of-motion method was used to obtain these corrections in the limit of long wavelengths, and the results are given in terms of the equilibrium pair correlation function. The finite degree of spin polarization is shown to introduce coupling between the charge and spin density modes, in contrast with the result for an unpolarized system

  13. Comments on spin operators and spin-polarization states of 2+1 fermions

    Energy Technology Data Exchange (ETDEWEB)

    Gavrilov, S.P.; Tomazelli, J.L. [Departamento Fisica e Quimica, UNESP, Campus de Guaratingueta (Brazil); Gitman, D.M. [Universidade de Sao Paulo, Instituto de Fisica, Caixa Postal 66318-CEP, Sao Paulo, S.P. (Brazil)

    2005-02-01

    In this brief article we discuss spin-polarization operators and spin-polarization states of 2+1 massive Dirac fermions and find a convenient representation by the help of 4-spinors for their description. We stress that in particular the use of such a representation allows us to introduce the conserved covariant spin operator in the 2+1 field theory. Another advantage of this representation is related to the pseudoclassical limit of the theory. Indeed, quantization of the pseudoclassical model of a spinning particle in 2+1 dimensions leads to the 4-spinor representation as the adequate realization of the operator algebra, where the corresponding operator of a first-class constraint, which cannot be gauged out by imposing the gauge condition, is just the covariant operator previously introduced in the quantum theory. (orig.)

  14. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands

    International Nuclear Information System (INIS)

    Honda, Syuta; Inuzuka, Kouhei; Inoshita, Takeshi; Ota, Norio; Sano, Nobuyuki

    2014-01-01

    The magnetization and spin transport of asymmetric zigzag-edge graphene nanoribbons, terminated by hydrogen on one edge while unterminated on the other edge, were investigated by a combination of first-principles calculations and a tight-binding approach. At the unterminated edge, a spin-polarized σ edge state of minority spin appears near the Fermi level and contributes to spin transport. This state enters the band gap for ribbon widths of less than 15 chains, dominating the spin-polarized current. This indicates the importance of the σ edge states in the design of spintronic devices using graphene nanoribbons. We also examined the case where the ‘unterminated’ edge is partially terminated by hydrogen. (paper)

  15. Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

    Science.gov (United States)

    Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

    2017-11-01

    The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

  16. Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

    Science.gov (United States)

    Miah, M Idrish

    2009-05-14

    We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

  17. A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sumit, E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15

    Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing I{sub D}/I{sub G} ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest I{sub D}/I{sub G}, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

  18. Investigation of spin-polarized transport in GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tierney, B D; Day, T E; Goodnick, S M [Department of Electrical Engineering and Center for Solid State Electronics Research Arizona State University, Tempe, AZ 85287-5706 (United States)], E-mail: brian.tierney@asu.edu

    2008-03-15

    A spin field effect transistor (spin-FET) has been fabricated that employs nanomagnets as components of quantum point contact (QPC) structures to inject spin-polarized carriers into the high-mobility two-dimensional electron gas (2DEG) of a GaAs quantum well and to detect them. A centrally-placed non-magnetic Rashba gate controls both the density of electrons in the 2DEG and the electronic spin precession. Initial results are presented for comparable device structures modeled with an ensemble Monte Carlo (EMC) method. In the EMC the temporal and spatial evolution of the ensemble carrier spin polarization is governed by a spin density matrix formalism that incorporates the Dresselhaus and Rashba contributions to the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures from 77-300K.

  19. Room-temperature spin-polarized organic light-emitting diodes with a single ferromagnetic electrode

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup WA 6027 Australia (Australia); Song, Qunliang [Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing 400715 (China)

    2014-05-19

    In this paper, we demonstrate the concept of a room-temperature spin-polarized organic light-emitting diode (Spin-OLED) structure based on (i) the deposition of an ultra-thin p-type organic buffer layer on the surface of the ferromagnetic electrode of the Spin-OLED and (ii) the use of oxygen plasma treatment to modify the surface of that electrode. Experimental results demonstrate that the brightness of the developed Spin-OLED can be increased by 110% and that a magneto-electroluminescence of 12% can be attained for a 150 mT in-plane magnetic field, at room temperature. This is attributed to enhanced hole and room-temperature spin-polarized injection from the ferromagnetic electrode, respectively.

  20. Spin-polarized spin-orbit-split quantum-well states in a metal film

    Energy Technology Data Exchange (ETDEWEB)

    Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)

    2008-07-01

    Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.

  1. Strain-induced phase transition and electron spin-polarization in graphene spirals.

    Science.gov (United States)

    Zhang, Xiaoming; Zhao, Mingwen

    2014-07-16

    Spin-polarized triangular graphene nanoflakes (t-GNFs) serve as ideal building blocks for the long-desired ferromagnetic graphene superlattices, but they are always assembled to planar structures which reduce its mechanical properties. Here, by joining t-GNFs in a spiral way, we propose one-dimensional graphene spirals (GSs) with superior mechanical properties and tunable electronic structures. We demonstrate theoretically the unique features of electron motion in the spiral lattice by means of first-principles calculations combined with a simple Hubbard model. Within a linear elastic deformation range, the GSs are nonmagnetic metals. When the axial tensile strain exceeds an ultimate strain, however, they convert to magnetic semiconductors with stable ferromagnetic ordering along the edges. Such strain-induced phase transition and tunable electron spin-polarization revealed in the GSs open a new avenue for spintronics devices.

  2. Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

    Science.gov (United States)

    Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

    2012-07-01

    Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

  3. Control of the spin polarization of photoelectrons/photoions using short laser pulses

    International Nuclear Information System (INIS)

    Nakajima, Takashi

    2004-01-01

    We present a generic pump-probe scheme to control spin polarization of photoelectrons/photoions by short laser pulses. By coherently exciting fine structure manifolds of a multi-valence-electron system by the pump laser, a superposition of fine structure states is created. Since each fine structure state can be further decomposed into a superposition of various spin states of valence electrons, each spin component evolves differently in time. This means that varying the time delay between the pump and probe lasers leads to the control of spin states. Specific theoretical results are presented for two-valence-electron atoms, in particular for Mg, which demonstrate that not only the degree of spin polarization but also its sign can be manipulated through time delay. Since the underline physics is rather general and transparent, the presented idea may be potentially applied to nanostructures such as quantum wells and quantum dots

  4. Intense source of spin-polarized electrons using laser-induced optical pumping

    International Nuclear Information System (INIS)

    Gray, L.G.; Giberson, K.W.; Cheng, C.; Keiffer, R.S.; Dunning, F.B.; Walters, G.K.

    1983-01-01

    A source of spin-polarized electrons based on a laser-pumped flowing helium afterglow is described. He(2 3 S) atoms contained in the afterglow are optically pumped using circularly polarized 1.08-μm (2 3 S→2 3 P) radiation provided by a NaF (F 2+ )( color-center laser. Spin angular momentum conservation in subsequent chemi-ionization reactions with CO 2 produces polarized electrons that are extracted from the afterglow. At low currents, < or approx. =1 μA, polarizations of approx.70%--80% are achieved. At higher currents the polarization decreases, falling to approx.40% at 50 μA. The spin polarization can be simply reversed (P→-P) and the source is suitable for use in the majority of low-energy spin-dependent scattering experiments proposed to date

  5. Probing spin-polarized edge state superconductivity by Andreev reflection in in-plane magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Reinthaler, Rolf W.; Tkachov, Grigory; Hankiewicz, Ewelina M. [Faculty of Physics and Astrophysics, University of Wuerzburg, Wuerzburg (Germany)

    2015-07-01

    Finding signatures of unconventional superconductivity in Quantum Spin Hall systems is one of the challenges of solid state physics. Here we induce superconductivity in a 3D topological insulator thin film to cause the formation of helical edge states, which are protected against backscattering even in finite magnetic fields. Above a critical in-plane magnetic field, which is much smaller than the critical field of typical superconductors, the quasi-particle gap closes, giving rise to energy-dependent spin polarization. In this regime the spin-polarized edge state superconductivity can be detected by Andreev reflection. We propose measurement setups to experimentally observe the spin-dependent excess current and dI/dV characteristics.

  6. Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

    Science.gov (United States)

    Li, Pengke; Appelbaum, Ian

    2018-03-01

    The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

  7. High spin-polarization in ultrathin Co{sub 2}MnSi/CoPd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Galanakis, I., E-mail: galanakis@upatras.gr

    2015-03-01

    Half-metallic Co{sub 2}MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co{sub 2}MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co{sub 2}MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co{sub 2}MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices.

  8. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    International Nuclear Information System (INIS)

    Galanakis, I.

    2015-01-01

    Half-metallic Co 2 MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co 2 MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co 2 MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co 2 MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices

  9. Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes

    Science.gov (United States)

    Green, B. L.; Mottishaw, S.; Breeze, B. G.; Edmonds, A. M.; D'Haenens-Johansson, U. F. S.; Doherty, M. W.; Williams, S. D.; Twitchen, D. J.; Newton, M. E.

    2017-09-01

    We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV0 ), an S =1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T2>100 μ s at low-temperature, and a spin relaxation limit of T1>25 s . Optical spin-state initialization around 946 nm allows independent initialization of SiV0 and NV- within the same optically addressed volume, and SiV0 emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV0 is a promising candidate for a long-range quantum communication technology.

  10. Micromagnetism in (001) magnetite by spin-polarized low-energy electron microscopy

    International Nuclear Information System (INIS)

    Figuera, Juan de la; Vergara, Lucía; N'Diaye, Alpha T.; Quesada, Adrian; Schmid, Andreas K.

    2013-01-01

    Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (001) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the magnetization vector with high spatial and angular resolution. We find that domains are magnetized along the surface directions, and domain wall structures include 90° and 180° walls. A type of unusually curved domain walls are interpreted as Néel-capped surface terminations of 180° Bloch walls. - Highlights: ► The (001) surface of magnetite is imaged by spin-polarized low-energy electron microscopy. ► The magnetic domain microstructure is resolved. ► Magnetic easy axes in this surface are found to be along directions. ► Magnetic domain wall structures include wide Néel-caps

  11. Micromagnetism in (001) magnetite by spin-polarized low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Figuera, Juan de la, E-mail: juan.delafiguera@iqfr.csic.es [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); Vergara, Lucía [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); N' Diaye, Alpha T. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Quesada, Adrian [Instituto de Cerámica y Vidrio, CSIC, Calle Kelsen 5, 28049, Madrid (Spain); Schmid, Andreas K. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-07-15

    Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (001) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the magnetization vector with high spatial and angular resolution. We find that domains are magnetized along the surface <110> directions, and domain wall structures include 90° and 180° walls. A type of unusually curved domain walls are interpreted as Néel-capped surface terminations of 180° Bloch walls. - Highlights: ► The (001) surface of magnetite is imaged by spin-polarized low-energy electron microscopy. ► The magnetic domain microstructure is resolved. ► Magnetic easy axes in this surface are found to be along <110> directions. ► Magnetic domain wall structures include wide Néel-caps.

  12. Structure of the spin polarization spectrum of secondary electrons emitted from nickel

    International Nuclear Information System (INIS)

    Helman, J.S.

    1985-01-01

    The main features of the structure observed in the energy resolved spin polarization of secondary electrons emitted from Ni are interpreted in terms of surface and bulk plasmon assisted emission. The model also predicts a measureable shift of the main polarization peak of about 0.3 eV to lower energies as the temperature is raised from room temperature to closely below the Curie temperature. (Author) [pt

  13. Berry phase and shot noise for spin-polarized and entangled electrons

    International Nuclear Information System (INIS)

    Wang Pei; Tang Weihua; Lu Dinghui; Jiang Lixia; Zhao Xuean

    2007-01-01

    Shot noise for entangled and spin-polarized states in a four-probe geometric setup has been studied by adding two rotating magnetic fields in an incoming channel. Our results show that the noise power oscillates as the magnetic fields vary. The singlet, entangled triplet and polarized states can be distinguished by adjusting the magnetic fields. The Berry phase can be derived by measuring the shot noise power

  14. Application of the Ursell-Mayer method in the theory of spin-polarized atomic hydrogen

    International Nuclear Information System (INIS)

    Kilic, S.; Radelja, T.

    1981-01-01

    Employing the Ursell-Mayer method and Ljolje semi-free gas model analytic relations describing ground state properties (energy, pressure, compressibility, sound velocity, radial distribution function and one-particle density matrix) of spin-polarized atomic hydrogen were derived. The expressions are valid up to density 2 10 26 atoms/m 3 . It was found out that at density of 2 10 26 atoms/m 3 the condensation of particle in momentum space is 88% (at absolute zero). (orig.)

  15. Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

    2005-02-01

    The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

  16. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  17. Spin-polarized neutron matter at different orders of chiral effective field theory

    OpenAIRE

    Sammarruca, F.; Machleidt, R.; Kaiser, N.

    2015-01-01

    Spin-polarized neutron matter is studied using chiral two- and three-body forces. We focus, in particular, on predictions of the energy per particle in ferromagnetic neutron matter at different orders of chiral effective field theory and for different choices of the resolution scale. We discuss the convergence pattern of the predictions and their cutoff dependence. We explore to which extent fully polarized neutron matter behaves (nearly) like a free Fermi gas. We also consider the more gener...

  18. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

    2015-05-11

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

  19. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    International Nuclear Information System (INIS)

    Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

    2015-01-01

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

  20. First-Principles Prediction of Spin-Polarized Multiple Dirac Rings in Manganese Fluoride

    Science.gov (United States)

    Jiao, Yalong; Ma, Fengxian; Zhang, Chunmei; Bell, John; Sanvito, Stefano; Du, Aijun

    2017-07-01

    Spin-polarized materials with Dirac features have sparked great scientific interest due to their potential applications in spintronics. But such a type of structure is very rare and none has been fabricated. Here, we investigate the already experimentally synthesized manganese fluoride (MnF3 ) as a novel spin-polarized Dirac material by using first-principles calculations. MnF3 exhibits multiple Dirac cones in one spin orientation, while it behaves like a large gap semiconductor in the other spin channel. The estimated Fermi velocity for each cone is of the same order of magnitude as that in graphene. The 3D band structure further reveals that MnF3 possesses rings of Dirac nodes in the Brillouin zone. Such a spin-polarized multiple Dirac ring feature is reported for the first time in an experimentally realized material. Moreover, similar band dispersions can be also found in other transition metal fluorides (e.g., CoF3 , CrF3 , and FeF3 ). Our results highlight a new interesting single-spin Dirac material with promising applications in spintronics and information technologies.

  1. First-Principles Prediction of Spin-Polarized Multiple Dirac Rings in Manganese Fluoride.

    Science.gov (United States)

    Jiao, Yalong; Ma, Fengxian; Zhang, Chunmei; Bell, John; Sanvito, Stefano; Du, Aijun

    2017-07-07

    Spin-polarized materials with Dirac features have sparked great scientific interest due to their potential applications in spintronics. But such a type of structure is very rare and none has been fabricated. Here, we investigate the already experimentally synthesized manganese fluoride (MnF_{3}) as a novel spin-polarized Dirac material by using first-principles calculations. MnF_{3} exhibits multiple Dirac cones in one spin orientation, while it behaves like a large gap semiconductor in the other spin channel. The estimated Fermi velocity for each cone is of the same order of magnitude as that in graphene. The 3D band structure further reveals that MnF_{3} possesses rings of Dirac nodes in the Brillouin zone. Such a spin-polarized multiple Dirac ring feature is reported for the first time in an experimentally realized material. Moreover, similar band dispersions can be also found in other transition metal fluorides (e.g., CoF_{3}, CrF_{3}, and FeF_{3}). Our results highlight a new interesting single-spin Dirac material with promising applications in spintronics and information technologies.

  2. Role of spin polarization in FM/Al/FM trilayer film at low temperature

    Science.gov (United States)

    Lu, Ning; Webb, Richard

    2014-03-01

    Measurements of electronic transport in diffusive FM/normal metal/FM trilayer film are performed at temperature ranging from 2K to 300K to determine the behavior of the spin polarized current in normal metal under the influence of quantum phase coherence and spin-orbital interaction. Ten samples of Hall bar with length of 200 micron and width of 20 micron are fabricated through e-beam lithography followed by e-gun evaporation of Ni0.8Fe0.2, aluminum and Ni0.8Fe0.2 with different thickness (5nm to 45nm) in vacuum. At low temperature of 4.2K, coherent backscattering, Rashba spin-orbital interaction and spin flip scattering of conduction electrons contribute to magnetoresistance at low field. Quantitative analysis of magnetoresistance shows transition between weak localization and weak anti-localization for samples with different thickness ratio, which indicates the spin polarization actually affects the phase coherence length and spin-orbital scattering length. However, at temperature between 50K and 300K, only the spin polarization dominates the magnetoresistance.

  3. Effect of spin-polarized D-3He fuel on dense plasma focus for space propulsion

    Science.gov (United States)

    Mei-Yu Wang, Choi, Chan K.; Mead, Franklin B.

    1992-01-01

    Spin-polarized D-3He fusion fuel is analyzed to study its effect on the dense plasma focus (DPF) device for space propulsion. The Mather-type plasma focus device is adopted because of the ``axial'' acceleration of the current carrying plasma sheath, like a coaxial plasma gun. The D-3He fuel is chosen based on the neutron-lean fusion reactions with high charged-particle fusion products. Impulsive mode of operation is used with multi-thrusters in order to make higher thrust (F)-to-weight (W) ratio with relatively high value of specific impulse (Isp). Both current (I) scalings with I2 and I8/3 are considered for plasma pinch temperature and capacitor mass. For a 30-day Mars mission, with four thrusters, for example, the typical F/W values ranging from 0.5-0.6 to 0.1-0.2 for I2 and I8/3 scalings, respectively, and the Isp values of above 1600 s are obtained. Parametric studies indicate that the spin-polarized D-3He provides increased values of F/W and Isp over conventional D-3He fuel which was due to the increased fusion power and decreased radiation losses for the spin-polarized case.

  4. Sensing Noncollinear Magnetism at the Atomic Scale Combining Magnetic Exchange and Spin-Polarized Imaging.

    Science.gov (United States)

    Hauptmann, Nadine; Gerritsen, Jan W; Wegner, Daniel; Khajetoorians, Alexander A

    2017-09-13

    Storing and accessing information in atomic-scale magnets requires magnetic imaging techniques with single-atom resolution. Here, we show simultaneous detection of the spin-polarization and exchange force with or without the flow of current with a new method, which combines scanning tunneling microscopy and noncontact atomic force microscopy. To demonstrate the application of this new method, we characterize the prototypical nanoskyrmion lattice formed on a monolayer of Fe/Ir(111). We resolve the square magnetic lattice by employing magnetic exchange force microscopy, demonstrating its applicability to noncollinear magnetic structures for the first time. Utilizing distance-dependent force and current spectroscopy, we quantify the exchange forces in comparison to the spin-polarization. For strongly spin-polarized tips, we distinguish different signs of the exchange force that we suggest arises from a change in exchange mechanisms between the probe and a skyrmion. This new approach may enable both nonperturbative readout combined with writing by current-driven reversal of atomic-scale magnets.

  5. N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

    2004-01-21

    Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

  6. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  7. Electron emission in the Auger neutralization of a spin-polarized He+ ion embedded in a free electron gas

    International Nuclear Information System (INIS)

    Juaristi, J.I.; Alducin, M.; Diez Muino, R.; Roesler, M.

    2005-01-01

    Results are presented for the energy distribution and spin polarization of the electrons excited during the Auger neutralization of a spin polarized He + ion embedded in a paramagnetic free electron gas. The screening of the He + ion is calculated using density functional theory within the local spin density approximation. The Auger rates, the energy distribution and the spin polarization of the excited electrons are obtained using the Fermi golden rule. The transport of the electrons is calculated within the Boltzmann transport equation formalism. The spin-polarization of the initially excited electrons is very high (>70%) and parallel to that of the electron bound to the He + ion. Nevertheless, the emitted electrons show a much lower degree of polarization, mainly in the low energy range, due to the creation of the unpolarized cascade of secondaries in the transport process

  8. Frozen-in vacancies in PVD-Cu films with improved high-pressure reflowability studied using a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Yabuuchi, A; Kubo, D; Mizuno, M; Araki, H [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Onishi, T [Materials Research Laboratory, Kobe Steel Ltd., 5-5 Takatsukadai 1-chome, Nishi-ku, Kobe, Hyogo 651-2271 (Japan); Shirai, Y [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)], E-mail: atsushi.yabuuchi@mat.eng.osaka-u.ac.jp

    2009-05-01

    Recently, a new process has been proposed for fabricating a LSI interconnection; filling trenches and via holes with Cu using high-pressure annealing treatment. It is already known that a Cu film produced by physical vapor deposition (PVD) has a lower reflowability compared to a Cu film produced by electrochemical deposition (ECD). Additionally, it has also been recognized that the addition of Sb to the PVD-Cu film improves the reflowability. However, the factors responsible for the reflowability of Cu films have not yet been studied. In this work, we evaluated a PVD pure-Cu film and a PVD Cu-0.5at%Sb film by using a slow positron beam. Addition of Sb led to the introduction of lattice defects in the as-deposited film. These defects that were observed in the PVD-CuSb dilute alloy film were identified as frozen-in vacancies that were produced during deposition.

  9. Frozen-in vacancies in PVD-Cu films with improved high-pressure reflowability studied using a slow positron beam

    International Nuclear Information System (INIS)

    Yabuuchi, A; Kubo, D; Mizuno, M; Araki, H; Onishi, T; Shirai, Y

    2009-01-01

    Recently, a new process has been proposed for fabricating a LSI interconnection; filling trenches and via holes with Cu using high-pressure annealing treatment. It is already known that a Cu film produced by physical vapor deposition (PVD) has a lower reflowability compared to a Cu film produced by electrochemical deposition (ECD). Additionally, it has also been recognized that the addition of Sb to the PVD-Cu film improves the reflowability. However, the factors responsible for the reflowability of Cu films have not yet been studied. In this work, we evaluated a PVD pure-Cu film and a PVD Cu-0.5at%Sb film by using a slow positron beam. Addition of Sb led to the introduction of lattice defects in the as-deposited film. These defects that were observed in the PVD-CuSb dilute alloy film were identified as frozen-in vacancies that were produced during deposition.

  10. Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

    Science.gov (United States)

    Jiang, M.; Wang, D. D.; Chen, Z. Q.; Kimura, S.; Yamashita, Y.; Mori, A.; Uedono, A.

    2013-01-01

    Undoped ZnO single crystals were implanted with 300 keV Si+ ions to a dose of 6 × 1016 cm-2. A combination of X-ray diffraction (XRD), positron annihilation, Raman scattering, high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) was used to study the microstructure evolution after implantation and subsequent annealing. A very large increase of Doppler broadening S parameters in Si+-implanted region was detected by using a slow positron beam, indicating that vacancy clusters or microvoids are induced by implantation. The S parameters increase further after annealing up to 700 °C, suggesting agglomeration of these vacancies or microvoids to larger size. Most of these defects are removed after annealing up to 1100 °C. The other measurements such as XRD, Raman scattering, and PL all indicate severe damage and even disordered structure induced by Si+ implantation. The damage and disordered lattice shows recovery after annealing above 700 °C. Amorphous regions are observed by HRTEM measurement, directly testifies that amorphous phase is induced by Si+ implantation in ZnO. Analysis of the S - W correlation and the coincidence Doppler broadening spectra gives direct evidence of SiO2 precipitates in the sample annealed at 700 °C, which strongly supports the chemical effect of Si ions on the amorphization of ZnO lattice.

  11. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Koida, T. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Uedono, A. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Sota, T. [Department of Electrical, Engineering and Bioscience, Waseda University, Shinjuku 169-8555 (Japan); Kawasaki, M. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044 (Japan); Chichibu, S.F. [NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Photodynamics Research Center, RIKEN, Sendai 980-0868 (Japan)

    2004-09-01

    The roles of point defects and defect complexes governing nonradiative processes in ZnO epilayers were studied using time-resolved photoluminescence (PL) and slow positron annihilation measurements. The density or size of Zn vacancies (V{sub Zn}) decreased and the nonradiative PL lifetime ({tau}{sub nr}) increased with higher growth temperature for epilayers grown on a ScAlMgO{sub 4} substrate. Accordingly, the steady-state free excitonic PL intensity increased with increase in {tau}{sub nr} at room temperature. The use of a homoepitaxial substrate further decreased the V{sub Zn} concentration. However, no perfect relation between {tau}{sub nr} and the density or size of V{sub Zn} or other positron scattering centers was found. The results indicated that nonradiative recombination processes are governed not solely by single point defects, but by certain defect species introduced by the presence of V{sub Zn} such as vacancy complexes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  13. Electron-spin polarization of photoions produced through photoionization from the laser-excited triplet state of Sr

    International Nuclear Information System (INIS)

    Yonekura, Nobuaki; Nakajima, Takashi; Matsuo, Yukari; Kobayashi, Tohru; Fukuyama, Yoshimitsu

    2004-01-01

    We report the detailed experimental study on the production of electron-spin-polarized Sr + ions through one-photon resonant two-photon ionization via laser-excited 5s5p 3 P 1 (M J =+1) of Sr atoms produced by laser-ablation. We have experimentally confirmed that the use of laser-ablation for the production of Sr atoms prior to photoionization does not affect the electron-spin polarization. We have found that the degree of electron-spin polarization is 64±9%, which is in good agreement with our recent theoretical prediction. As we discuss in detail, we infer, from a simple analysis, that photoelectrons, being the counterpart of electron-spin-polarized Sr + ions, have approximately the same degree of electron-spin polarization. Our experimental results demonstrate that the combined use of laser-ablation technique and pulsed lasers for photoionization would be a compact and effective way to realize a pulsed source for spin-polarized ions and electrons for the studies of various spin-dependent dynamics in chemical physics

  14. Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Suzuki, R.; Ohdaira, T.

    2005-01-01

    ZnO crystals were implanted with N + , O + , and Al + , and co-implanted with O + /N + and Al + /N + ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N + -implanted and Al + /N + co-implanted samples, these vacancy clusters are only partially annealed at 800 deg. C, as compared with their entire recovery in the O + - and Al + -implanted samples at 800-900 deg. C, suggesting a strong interaction between nitrogen and vacancy clusters. However, in the O + /N + co-implanted sample, most vacancy clusters disappear at 800 deg. C. Probably oxygen scavenges nitrogen to enhance the annealing of the vacancy clusters. Upon further annealing at 1000-1100 deg. C, nitrogen also forms stable complexes with thermally generated vacancies. These nitrogen-related vacancy complexes need high-temperature annealing at 1200-1250 deg. C to be fully removed

  15. High efficiency positron moderation

    International Nuclear Information System (INIS)

    Taqqu, D.

    1990-01-01

    A new positron moderation scheme is proposed. It makes use of electric and magnetic fields to confine the β + emitted by a radioactive source forcing them to slow down within a thin foil. A specific arrangement is described where an intermediary slowed-down beam of energy below 10 keV is produced. By directing it towards a standard moderator optimal conversion into slow positrons is achieved. This scheme is best applied to short lived β + emitters for which a 25% moderation efficiency can be reached. Within the state of the art technology a slow positron source intensity exceeding 2 x 10 10 e + /sec is achievable. (orig.)

  16. Development of pore interconnectivity/morphology in porous silica films investigated by cyclic voltammetry and slow positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Tang, Xiuqin; Xiong, Bangyun; Li, Qichao; Mao, Wenfeng; Xiao, Wei; Fang, Pengfei; He, Chunqing

    2015-01-01

    Highlights: •Porous silica films were studied by cyclic voltammetry and positron annihilation. •Highly interconnected pores were formed in the film fabricated with more CTAB. •Aligned nanochannels were observed in the porous flim prepared with 25 wt.% CTAB. •I − and Ps diffusion in the films was governed by pore interconnectivity/morphology. •Cyclic voltammetry is feasible to explore pore interconnectivity/morphology. -- Abstract: Cyclic voltammetry and positronium (Ps) 3γ-annihilation spectroscopy were applied to investigate pore interconnectivity/morphology of porous silica films fabricated with various loading of cetyltrimethyl ammonium bromide (CTAB). With increasing the ratio of CTAB up to 15 wt.%, the total charge Q, resulted from I − diffusion across the silica films, increased remarkably, indicative of formation of highly interconnected pores in the films prepared with more porogen. However, it decreased dramatically with further loading CTAB of 25 wt.%. Interestingly, 3γ-annihilation fraction I 3γ due to a triplet-state Ps (ortho-positronium, o-Ps) emission from the silica films showed a similar behavior as a function of CTAB loading. The abnormal decrement in Q and I 3γ in the film fabricated with 25 wt.% CTAB was well explained by formation of long nanochannels aligning parallel to the film surface. The results indicated that the total charge Q and Ps 3γ-annihilation fraction were closely associated with I − and Ps diffusion governed by the pore interconnectivity/morphology of the silica films, which made cyclic voltammetry possible to be a feasible tool to characterize pore interconnectivity/morphology of porous thin films

  17. Realizing stable fully spin polarized transport in SiC nanoribbons with dopant

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Xixi; Wang, Xianlong; Zheng, Xiaohong, E-mail: xhzheng@theory.issp.ac.cn; Zeng, Zhi [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Hao, Hua [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

    2016-06-06

    Intrinsic half-metallicity recently reported in zigzag edged SiC nanoribbons is basically undetectable due to negligible energy difference between the antiferromagnetic (AFM) and ferromagnetic (FM) configurations. In this Letter, by density functional theory calculations, we demonstrate a scheme of N doping at the carbon edge to selectively close the edge state channel at this edge and achieve 100% spin filtering, no matter whether it is in an AFM state or FM state. This turns SiC nanoribbon into a promising material for obtaining stable and completely spin polarized transport and may find application in spintronic devices.

  18. A cryostat to hold frozen-spin polarized HD targets in CLAS: HDice-II

    Energy Technology Data Exchange (ETDEWEB)

    Lowry, M.M., E-mail: mlowry@jlab.org [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Bass, C.D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); D' Angelo, A. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Universita' di Roma ‘Tor Vergata’, and INFN Sezione di Roma ‘Tor Vergata’, Via della Ricerca Scientifica, 1, I-00133 Roma (Italy); Deur, A.; Dezern, G. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Hanretty, C. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Ho, D. [Carnegie-Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States); Kageya, T.; Kashy, D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Khandaker, M. [Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Laine, V. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Université Blaise Pascal, 34 Avenue Carnot, 63000 Clermont-Ferrand (France); O' Connell, T. [University of Connecticut, 115 N Eagleville Road, Storrs-Mansfield, CT 06269 (United States); Pastor, O. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Peng, P. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Sandorfi, A.M. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Sokhan, D. [Institut de Physique Nucleaire, Bat 100 – M053, Orsay 91406 (France); and others

    2016-04-11

    The design, fabrication, operation, and performance of a {sup 3/4}He dilution refrigerator and superconducting magnet system for holding a frozen-spin polarized hydrogen deuteride target in the Jefferson Laboratory CLAS detector during photon beam running is reported. The device operates both vertically (for target loading) and horizontally (for target bombardment). The device proves capable of maintaining a base temperature of 50 mK and a holding field of 1 T for extended periods. These characteristics enabled multi-month polarization lifetimes for frozen spin HD targets having proton polarization of up to 50% and deuteron up to 27%.

  19. Complete snake and rotator schemes for spin polarization in proton rings and large electron rings

    International Nuclear Information System (INIS)

    Steffen, K.

    1983-11-01

    In order to maintain spin polarization in proton rings and large electron rings, some generalized Siberian Snake scheme may be required to make the spin tune almost independent of energy and thus avoid depolarizing resonances. The practical problem of finding such schemes that, at reasonable technical effort, can be made to work over large energy ranges has been addressed before and is here revisited in a broadened view and with added new suggestions. As a result, possibly optimum schemes for electron rings (LEP) and proton rings are described. In the proposed LEP scheme, spin rotation is devised such that, at the interaction points, the spin direction is longitudinal as required for experiments. (orig.)

  20. Light-free magnetic resonance force microscopy for studies of electron spin polarized systems

    International Nuclear Information System (INIS)

    Pelekhov, Denis V.; Selcu, Camelia; Banerjee, Palash; Chung Fong, Kin; Chris Hammel, P.; Bhaskaran, Harish; Schwab, Keith

    2005-01-01

    Magnetic resonance force microscopy is a scanned probe technique capable of three-dimensional magnetic resonance imaging. Its excellent sensitivity opens the possibility for magnetic resonance studies of spin accumulation resulting from the injection of spin polarized currents into a para-magnetic collector. The method is based on mechanical detection of magnetic resonance which requires low noise detection of cantilever displacement; so far, this has been accomplished using optical interferometry. This is undesirable for experiments on doped silicon, where the presence of light is known to enhance spin relaxation rates. We report a non-optical displacement detection scheme based on sensitive microwave capacitive readout

  1. Transmittance and Tunneling Current through a Trapezoidal Barrier under Spin Polarization Consideration

    Science.gov (United States)

    Noor, F. A.; Nabila, E.; Mardianti, H.; Ariani, T. I.; Khairurrijal

    2018-04-01

    The transmittance and tunneling current in heterostructures under spin polarization consideration were studied by employing a zinc-blended structure for the heterostructures. An electron tunnels through a potential barrier by applying a bias voltage to the barrier, which is called the trapezoidal potential barrier. In order to study the transmittance, an Airy wave function approach was employed to find the transmittance. The obtained transmittance was then utilized to compute the tunneling current by using a Gauss quadrature method. It was shown that the transmittances were asymmetric with the incident angle of the electron. It was also shown that the tunneling currents increased as the bias voltage increased.

  2. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    Science.gov (United States)

    Galanakis, I.

    2015-03-01

    Half-metallic Co2MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co2MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co2MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices.

  3. The enhanced spin-polarized transport behaviors through cobalt benzene-porphyrin-benzene molecular junctions: the effect of functional groups

    Science.gov (United States)

    Cheng, Jue-Fei; Zhou, Liping; Wen, Zhongqian; Yan, Qiang; Han, Qin; Gao, Lei

    2017-05-01

    The modification effects of the groups amino (NH2) and nitro (NO2) on the spin polarized transport properties of the cobalt benzene-porphyrin-benzene (Co-BPB) molecule coupled to gold (Au) nanowire electrodes are investigated by the nonequilibrium Green’s function method combined with the density functional theory. The calculation results show that functional groups can lead to the significant spin-filter effect, enhanced low-bias negative differential resistance (NDR) behavior and novel reverse rectifying effect in Co-BPB molecular junction. The locations and types of functional groups have distinct influences on spin-polarized transport performances. The configuration with NH2 group substituting H atom in central porphyrin ring has larger spin-down current compared to that with NO2 substitution. And Co-BPB molecule junction with NH2 group substituting H atom in side benzene ring shows reverse rectifying effect. Detailed analyses confirm that NH2 and NO2 group substitution change the spin-polarized transferred charge, which makes the highest occupied molecular orbitals (HOMO) of spin-down channel of Co-BPB closer to the Fermi level. And the shift of HOMO strengthens the spin-polarized coupling between the molecular orbitals and the electrodes, leading to the enhanced spin-polarized behavior. Our findings might be useful in the design of multi-functional molecular devices in the future.

  4. Simultaneous production of spin-polarized ions/electrons based on two-photon ionization of laser-ablated metallic atoms

    International Nuclear Information System (INIS)

    Nakajima, Takashi; Yonekura, Nobuaki; Matsuo, Yukari; Kobayashi, Tohru; Fukuyama, Yoshimitsu

    2003-01-01

    We demonstrate the simultaneous production of spin-polarized ions/electrons using two-color, two-photon ionization of laser-ablated metallic atoms. Specifically, we have applied the developed technique to laser-ablated Sr atoms, and found that the electron-spin polarization of Sr + ions, and accordingly, the spin polarization of photoelectrons is 64%±9%, which is in good agreement with the theoretical prediction we have recently reported [T. Nakajima and N. Yonekura, J. Chem. Phys. 117, 2112 (2002)]. Our experimental results open up a simple way toward the construction of a spin-polarized dual ion/electron source

  5. Correlation effects on spin-polarized electron-hole quantum bilayer

    Energy Technology Data Exchange (ETDEWEB)

    Saini, L. K., E-mail: drlalitsaini75@gmail.com; Sharma, R. O., E-mail: sharmarajesh0387@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat – 395 007 (India); Nayak, Mukesh G. [Department of Physics, Silvassa College (Silvassa Institute of Higher Learning), Silvassa 396 230 (India)

    2016-05-06

    We present a numerical calculation for the intra- and interlayer pair-correlation functions, g{sub ll’}(r), of spin-polarized electron-hole quantum bilayers at zero temperature. The calculations of g{sub ll’}(r) are performed by including electron correlations within the dynamical version of the self-consistent mean-field approximation of Singwi, Tosi, Land and Sjölander (qSTLS). Our study reveals that the critical layer density decreases (increases) due to the inclusion of finite width (mass-asymmetry) effect during the phase-transition from charge-density wave to Wigner crystal ground-state by yielding the pronounced oscillatory behavior ing{sub ll}(r). The results are compared with recent findings of spin-polarized electron-hole quantum bilayers with mass-symmetry and zero width effects. To highlight the importance of dynamical character of correlations, we have also compared our results with the STLS results.

  6. Dynamical nuclear spin polarization induced by electronic current through double quantum dots

    International Nuclear Information System (INIS)

    Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus

    2011-01-01

    We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.

  7. Semiclassical theory of the tunneling anomaly in partially spin-polarized compressible quantum Hall states

    Science.gov (United States)

    Chowdhury, Debanjan; Skinner, Brian; Lee, Patrick A.

    2018-05-01

    Electron tunneling into a system with strong interactions is known to exhibit an anomaly, in which the tunneling conductance vanishes continuously at low energy due to many-body interactions. Recent measurements have probed this anomaly in a quantum Hall bilayer of the half-filled Landau level, and shown that the anomaly apparently gets stronger as the half-filled Landau level is increasingly spin polarized. Motivated by this result, we construct a semiclassical hydrodynamic theory of the tunneling anomaly in terms of the charge-spreading action associated with tunneling between two copies of the Halperin-Lee-Read state with partial spin polarization. This theory is complementary to our recent work (D. Chowdhury, B. Skinner, and P. A. Lee, arXiv:1709.06091) where the electron spectral function was computed directly using an instanton-based approach. Our results show that the experimental observation cannot be understood within conventional theories of the tunneling anomaly, in which the spreading of the injected charge is driven by the mean-field Coulomb energy. However, we identify a qualitatively new regime, in which the mean-field Coulomb energy is effectively quenched and the tunneling anomaly is dominated by the finite compressibility of the composite Fermion liquid.

  8. Generalized nuclear Fukui functions in the framework of spin-polarized density-functional theory

    International Nuclear Information System (INIS)

    Chamorro, E.; Proft, F. de; Geerlings, P.

    2005-01-01

    An extension of Cohen's nuclear Fukui function is presented in the spin-polarized framework of density-functional theory (SP-DFT). The resulting new nuclear Fukui function indices Φ Nα and Φ Sα are intended to be the natural descriptors for the responses of the nuclei to changes involving charge transfer at constant multiplicity and also the spin polarization at constant number of electrons. These generalized quantities allow us to gain new insights within a perturbative scheme based on DFT. Calculations of the electronic and nuclear SP-DFT quantities are presented within a Kohn-Sham framework of chemical reactivity for a sample of molecules, including H 2 O, H 2 CO, and some simple nitrenes (NX) and phosphinidenes (PX), with X=H, Li, F, Cl, OH, SH, NH 2 , and PH 2 . Results have been interpreted in terms of chemical bonding in the context of Berlin's theorem, which provides a separation of the molecular space into binding and antibinding regions

  9. Ring-diagram calculations of normal and spin-polarized 3He using the Aziz interactions

    International Nuclear Information System (INIS)

    Heyer, J.; Kiang, L.L.; Jiang, M.F.; Kuo, T.T.S.

    1991-01-01

    The authors calculate the ground-state energy of normal and spin-polarized 3 He within a model-space ring diagram framework where the particle-particle hole-hole (pphh) ring diagrams of the ground-state energy shift are summed up to all orders. The Aziz HFDHE2 and HFD-B(HE) interactions are employed. They first calculate a model space reaction matrix (G M ) whose intermediate states are required to be outside the chosen model space. The pphh ring diagrams with G M -matrix vertices are then summed within the model space by way of an RPA-type secular equation. The continuous single-particle spectrum of Mahaux is chosen. It is found that the inclusion of pphh ring diagrams gives a significant increase in the binding energy per particle (BE/A) as compared with Brueckner-Hartree-Fock calculations. For normal and spin-polarized 3 He their calculated values for BE/A and saturation densities are respectively (1.86 K, 0.72 angstrom -1 ) and (1.59 K, 0.91 angstrom -1 ), while the corresponding experimental values for normal 3 He are (2.47 K, 0.785 angstrom -1 ). 53 refs

  10. Spatial distribution of spin polarization in a channel on the surface of a topological insulator

    International Nuclear Information System (INIS)

    Zhou Xiaoying; Shao Huaihua; Liu Yiman; Tang Dongsheng; Zhou Guanghui

    2012-01-01

    We study the spatial distribution of electron spin polarization for a gate-controlled T-shaped channel on the surface of a three-dimensional topological insulator (3D TI). We demonstrate that an energy gap depending on channel geometry parameters is definitely opened due to the spatial confinement. Spin surface locking in momentum space for a uniform wide channel with Hamiltonian linearity in the wavevector is still kept, but it is broken with Hamiltonian nonlinearity in the wavevector, like that for two-dimensional surface states widely studied in the literature. However, the spin surface locking for a T-shaped channel is broken even with Hamiltonian linearity in the wavevector. Interestingly, the magnitude and direction of the in-plane spin polarization are spatially dependent in all regions due to the breaking of translational symmetry of the T-shaped channel system. These interesting findings for an electrically controlled nanostructure based on the 3D TI surface may be testable with the present experimental technique, and may provide further understanding the nature of 3D TI surface states. (paper)

  11. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  12. Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

    Science.gov (United States)

    Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

    2016-10-26

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

  13. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    Science.gov (United States)

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-09-03

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

  14. Magnetic adatoms in two and four terminal graphene nanoribbons: A comparison between their spin polarized transport

    Science.gov (United States)

    Ganguly, Sudin; Basu, Saurabh

    2018-04-01

    We study the charge and spin transport in two and four terminal graphene nanoribbons (GNR) decorated with random distribution of magnetic adatoms. The inclusion of the magnetic adatoms generates only the z-component of the spin polarized conductance via an exchange bias in the absence of Rashba spin-orbit interaction (SOI), while in presence of Rashba SOI, one is able to create all the three (x, y and z) components. This has important consequences for possible spintronic applications. The charge conductance shows interesting behaviour near the zero of the Fermi energy. Where in presence of magnetic adatoms the familiar plateau at 2e2 / h vanishes, thereby transforming a quantum spin Hall insulating phase to an ordinary insulator. The local charge current and the local spin current provide an intuitive idea on the conductance features of the system. We found that, the local charge current is independent of Rashba SOI, while the three components of the local spin currents are sensitive to Rashba SOI. Moreover the fluctuations of the spin polarized conductance are found to be useful quantities as they show specific trends, that is, they enhance with increasing adatom densities. A two terminal GNR device seems to be better suited for possible spintronic applications.

  15. Characterization of atomic spin polarization lifetime of cesium vapor cells with neon buffer gas

    Science.gov (United States)

    Lou, Janet W.; Cranch, Geoffrey A.

    2018-02-01

    The dephasing time of spin-polarized atoms in an atomic vapor cell plays an important role in determining the stability of vapor-cell clocks as well as the sensitivity of optically-pumped magnetometers. The presence of a buffer gas can extend the lifetime of these atoms. Many vapor cell systems operate at a fixed (often elevated) temperature. For ambient temperature operation with no temperature control, it is necessary to characterize the temperature dependence as well. We present a spin-polarization lifetime study of Cesium vapor cells with different buffer gas pressures, and find good agreement with expectations based on the combined effects of wall collisions, spin exchange, and spin destruction. For our (7.5 mm diameter) vapor cells, the lifetime can be increased by two orders of magnitude by introducing Ne buffer gas up to 100 Torr. Additionally, the dependence of the lifetime on temperature is measured (25 - 47 oC) and simulated for the first time to our knowledge with reasonable agreement.

  16. Stability of superfluid phases in the 2D spin-polarized attractive Hubbard model

    Science.gov (United States)

    Kujawa-Cichy, A.; Micnas, R.

    2011-08-01

    We study the evolution from the weak coupling (BCS-like limit) to the strong coupling limit of tightly bound local pairs (LPs) with increasing attraction, in the presence of the Zeeman magnetic field (h) for d=2, within the spin-polarized attractive Hubbard model. The broken symmetry Hartree approximation as well as the strong coupling expansion are used. We also apply the Kosterlitz-Thouless (KT) scenario to determine the phase coherence temperatures. For spin-independent hopping integrals (t↑=t↓), we find no stable homogeneous polarized superfluid (SCM) state in the ground state for the strong attraction and obtain that for a two-component Fermi system on a 2D lattice with population imbalance, phase separation (PS) is favoured for a fixed particle concentration, even on the LP (BEC) side. We also examine the influence of spin-dependent hopping integrals (mass imbalance) on the stability of the SCM phase. We find a topological quantum phase transition (Lifshitz type) from the unpolarized superfluid phase (SC0) to SCM and tricritical points in the h-|U| and t↑/t↓-|U| ground-state phase diagrams. We also construct the finite temperature phase diagrams for both t↑=t↓ and t↑≠t↓ and analyze the possibility of occurrence of a spin-polarized KT superfluid.

  17. Progress in measurement and understanding of beam polarization in electron positron storage rings

    International Nuclear Information System (INIS)

    Barber, D.P.; Bremer, H.D.; Kewisch, J.; Lewin, H.C.; Limberg, T.; Mais, H.; Ripken, G.; Rossmanith, R.; Schmidt, R.

    1983-07-01

    A report is presented on the status of attempts to obtain and measure spin polarization in electron-positron storage rings. Experimental results are presented and their relationship to predictions of calculations discussed. Examples of methods for decoupling orbital and spin motion and thus improving polarization are discussed. (orig.)

  18. Detecting spin polarization of nano-crystalline manganese doped zinc oxide thin film using circular polarized light

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayed, H.M., E-mail: h_m_elsaid@hotmail.com

    2016-02-01

    The presence of spin polarization in Mn-doped ZnO thin film is very important for spintronic applications. Spin polarization was detected using simple method. This method depends on measuring the optical transmittance using circular polarized light in visible and near infra-red region. It was found that, there is a difference in the optical energy gap of the film for circular left and circular polarized light. For temperatures > 310 K the difference in energy gap is vanished. This result is confirmed by measuring the magnetic hysteresis of the film. This work introduces a promising method for measuring the ferromagnetism in diluted magnetic semiconductors. - Highlights: • Highly oriented c-axis of Mn-ZnO thin film doped with nitrogen is prepared. • The optical energy gap depends on the state of circularly polarized light. • The presence of spin polarization is confirmed using simple optical method. • Magnetic measurements are consistent with the results of the optical method.

  19. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  20. Detection of current-induced spin polarization in BiSbTeSe{sub 2} toplogical insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Fan; Ghatak, Subhamoy; Taskin, Alexey; Ando, Yoichi [Institute of Physics II, University of Cologne (Germany); Ando, Yuichiro [Department of Electronic Science and Engineering, Kyoto University (Japan)

    2016-07-01

    Topological insulators (TIs) are a class of quantum matter which possess spin-momentum-locked Dirac Fermions on the surfaces. Due to the spin-momentum locking, spin polarization will be induced when a charge current flows through the surface of a TI. Such spin polarization can be detected by using a ferromagnetic tunneling contact as a detector. In this talk, we present our results measured in devices fabricated from BiSbTeSe{sub 2} flakes. Spin signals were observed in both n-type and p-type BiSbTeSe{sub 2} samples.

  1. Spin-polarized x-ray emission of 3d transition-metal ions : A comparison via K alpha and K beta detection

    NARCIS (Netherlands)

    Wang, Xin; deGroot, F.M.F.; Cramer, SP

    1997-01-01

    This paper demonstrates that spin-polarized x-ray-excitation spectra can be obtained using K alpha emission as well as K beta lines. A spin-polarized analysis of K alpha x-ray emission and the excitation spectra by K alpha detection on a Ni compound is reported. A systematic analysis of the

  2. Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

    OpenAIRE

    Korenev, V. L.

    2005-01-01

    It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

  3. Spin polarized electron source technology transferred from HE accelerators to electron microscopes

    International Nuclear Information System (INIS)

    Nakanishi, Tsutomu

    2009-01-01

    For many years, we have developed a technology of spin-polarized-electron-source (PES) for a future linear collider project (ILC). Various new techniques for achieving high polarization, high quantum efficiency, high current density, sub-nanosecond multi-bunch generation etc. were developed. Two fundamental technologies; reduction of dark current and preparation of extremely high vacuum environment to protect the Negative Electron Affinity (NEA) surface have been also developed. Using these PES technologies and a new transmission type photocathode, we recently succeeded in producing the high brightness and high polarization electron beam for the low energy electron microscope (LEEM). Our Spin-LEEM system enables the world-first dynamic observation of surface magnetic domain formed by evaporation on the metal substrate with ∼ 20 nm space resolutions. (author)

  4. Contribution of vitamin K1 to the electron spin polarization in spinach photosystem I

    International Nuclear Information System (INIS)

    Rustandi, R.R.; Snyder, S.W.; Feezel, L.L.; Michalski, T.J.; Norris, J.R.; Thurnauer, M.C.; Biggins, J.

    1990-01-01

    The electron spin polarized (ESP) electron paramagnetic resonance (EPR) signal observed in spinach photosystem I (PSI) particles was examined in preparations depleted of vitamin K1 by solvent extraction and following biological reconstitution by the quinone. The ESP EPR signal was not detected in the solvent-extracted PSI sample but was restored upon reconstitution with either protonated or deuterated vitamin K1 under conditions that also restored electron transfer to the terminal PSI acceptors. Reconstitution using deuterated vitamin K1 resulted in a line narrowing of the ESP EPR signal, supporting the conclusion that the ESP EPR signals in the reconstituted samples arise from a radical pair consisting of the oxidized PSI primary donor, P700+, and reduced vitamin K1

  5. Change of cobalt magnetic anisotropy and spin polarization with alkanethiolates self-assembled monolayers

    International Nuclear Information System (INIS)

    Campiglio, Paolo; Breitwieser, Romain; Repain, Vincent; Guitteny, Solène; Chacon, Cyril; Bellec, Amandine; Lagoute, Jérôme; Girard, Yann; Rousset, Sylvie; Sassella, Adele; Imam, Mighfar; Narasimhan, Shobhana

    2015-01-01

    We demonstrate that the deposition of a self-assembled monolayer of alkanethiolates on a 1 nm thick cobalt ultrathin film grown on Au(111) induces a spin reorientation transition from in-plane to out-of-plane magnetization. Using ab initio calculations, we show that a methanethiolate layer changes slightly both the magnetocrystalline and shape anisotropy, both effects almost cancelling each other out for a 1 nm Co film. Finally, the change in hysteresis cycles upon alkanethiolate adsorption could be assigned to a molecular-induced roughening of the Co layer, as shown by STM. In addition, we calculate how a methanethiolate layer modifies the spin density of states of the Co layer and we show that the spin polarization at the Fermi level through the organic layer is reversed as compared to the uncovered Co. These results give new theoretical and experimental insights for the use of thiol-based self-assembled monolayers in spintronic devices. (paper)

  6. Polarimetry on dense samples of spin-polarized {sup 3}He by magnetostatic detection

    Energy Technology Data Exchange (ETDEWEB)

    Wilms, E.; Ebert, M.; Heil, W.; Surkau, R. [Mainz Univ. (Germany). Inst. fuer Physik

    1997-12-21

    A very sensitive low-field fluxgate magnetometer is used to detect the static magnetic field produced by dense samples of spin-polarized {sup 3}He gas contained in spherical glass cells at pressures around several bars. The {sup 3}He nuclear polarization can be extracted with high precision {Delta}P/P<1% by utilizing magnetostatic detection in combination with adiabatic fast-passage spin reversal. The polarization losses can be kept well below 0.1% thus making this type of polarimetry almost non-destructive. More simply even, P can be measured with reduced accuracy by the change of field when the cell is removed from the fluxgate. In this case the accuracy is limited to about 10% due to the uncertainties about the susceptibilities of the cell walls. (orig.). 29 refs.

  7. Polarimetry on dense samples of spin-polarized 3He by magnetostatic detection

    International Nuclear Information System (INIS)

    Wilms, E.; Ebert, M.; Heil, W.; Surkau, R.

    1997-01-01

    A very sensitive low-field fluxgate magnetometer is used to detect the static magnetic field produced by dense samples of spin-polarized 3 He gas contained in spherical glass cells at pressures around several bars. The 3 He nuclear polarization can be extracted with high precision ΔP/P<1% by utilizing magnetostatic detection in combination with adiabatic fast-passage spin reversal. The polarization losses can be kept well below 0.1% thus making this type of polarimetry almost non-destructive. More simply even, P can be measured with reduced accuracy by the change of field when the cell is removed from the fluxgate. In this case the accuracy is limited to about 10% due to the uncertainties about the susceptibilities of the cell walls. (orig.)

  8. Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

    International Nuclear Information System (INIS)

    Tian Hong-Yu; Wang Jun

    2012-01-01

    We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

    Science.gov (United States)

    Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

    2017-05-01

    The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

  10. Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Berber, S. [Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571 (Japan)]. E-mail: berber@comas.frsc.tsukuba.ac.jp; Oshiyama, A. [Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8571 (Japan)

    2006-04-01

    We have investigated the reconstruction of mono-vacancies in carbon nanotubes using density functional theory (DFT) geometry optimization and electronic structure calculations, employing a numerical basis set. We considered mono-vacancies in achiral nanotubes with diameter range {approx}4-9A. Contrary to previous tight-binding calculations, our results indicate that mono-vacancies could have several metastable geometries, confirming the previous plane-wave DFT results. Formation energy of mono-vacancies is 4.5-5.5eV, increasing with increasing tube diameter. Net magnetic moment decreases from ideal mono-vacancy value after reconstruction, reflecting the reduction of the number of dangling bonds. In spite of the existence of a dangling bond, ground state of mono-vacancies in semiconducting tubes have no spin polarization. Metallic carbon nanotubes show net magnetic moment for most stable structure of mono-vacancy, except for very small diameter tubes.

  11. Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization

    International Nuclear Information System (INIS)

    Berber, S.; Oshiyama, A.

    2006-01-01

    We have investigated the reconstruction of mono-vacancies in carbon nanotubes using density functional theory (DFT) geometry optimization and electronic structure calculations, employing a numerical basis set. We considered mono-vacancies in achiral nanotubes with diameter range ∼4-9A. Contrary to previous tight-binding calculations, our results indicate that mono-vacancies could have several metastable geometries, confirming the previous plane-wave DFT results. Formation energy of mono-vacancies is 4.5-5.5eV, increasing with increasing tube diameter. Net magnetic moment decreases from ideal mono-vacancy value after reconstruction, reflecting the reduction of the number of dangling bonds. In spite of the existence of a dangling bond, ground state of mono-vacancies in semiconducting tubes have no spin polarization. Metallic carbon nanotubes show net magnetic moment for most stable structure of mono-vacancy, except for very small diameter tubes

  12. Dark states in spin-polarized transport through triple quantum dot molecules

    Science.gov (United States)

    Wrześniewski, K.; Weymann, I.

    2018-02-01

    We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

  13. Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

    Science.gov (United States)

    Das, Sourin; Rao, Sumathi

    2011-06-10

    We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

  14. Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

    2004-01-01

    A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

  15. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  16. Cold Attractive Spin Polarized Fermi Lattice Gases and the Doped Positive U Hubbard Model

    International Nuclear Information System (INIS)

    Moreo, Adriana; Scalapino, D. J.

    2007-01-01

    Experiments on polarized fermion gases performed by trapping ultracold atoms in optical lattices allow the study of an attractive Hubbard model for which the strength of the on-site interaction is tuned by means of a Feshbach resonance. Using a well-known particle-hole transformation we discuss how results obtained for this system can be reinterpreted in the context of a doped repulsive Hubbard model. In particular, we show that the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state corresponds to the striped state of the two-dimensional doped positive U Hubbard model. We then use the results of numerical studies of the striped state to relate the periodicity of the FFLO state to the spin polarization. We also comment on the relationship of the d x 2 -y 2 superconducting phase of the doped 2D repulsive Hubbard model to a d-wave spin density wave state for the attractive case

  17. Spin-polarized transport through single-molecule magnet Mn6 complexes

    KAUST Repository

    Cremades, Eduard; Pemmaraju, C. D.; Sanvito, Stefano; Ruiz, Eliseo

    2013-01-01

    The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green's function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

  18. Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

    International Nuclear Information System (INIS)

    Lee, J.; Back, J.; Kim, K.H.; Kim, S.U.; Joo, S.; Rhie, K.; Hong, J.; Shin, K.; Lee, B.C.; Kim, T.

    2007-01-01

    We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

    Science.gov (United States)

    Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Shevyrin, A. A.; Bakarov, A. K.; Shklyaev, A. A.

    2018-02-01

    The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau ( 0.5 ×2 e2/h ) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

  20. Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents

    International Nuclear Information System (INIS)

    Bertotti, G.; Magni, A.; Serpico, C.; d'Aquino, M.; Mayergoyz, I. D.; Bonin, R.

    2005-01-01

    Full text: Considerable interest has been generated in recent years by the discovery that a current of spin-polarized electrons can apply appreciable torques to a nanoscale ferromagnet. This mechanism was theoretically predicted and subsequently confirmed by a number of experiments which have shown that spin transfer can indeed induce switching or microwave oscillations of the magnetization. Significant efforts have been devoted to the explanation of these results, in view of the new physics involved and of the possible applications to new types of current-controlled memory cells or microwave sources and resonators . However, the precise nature of magnetization dynamics when spin-polarized currents and external magnetic fields are simultaneously present has not yet been fully understood. The spin-transfer-driven nanomagnet is a nonlinear open system that is forced far from equilibrium by the injection of the current. Thus, the appropriate framework for the study of the problem is nonlinear dynamical system theory and bifurcation theory. In this talk, it is shown that within this framework the complexity and subtlety of spin-torque effects are fully revealed and quantified, once it is recognized that both intrinsic damping and spin transfer can be treated as perturbations of the free precessional dynamics typical of ferromagnetic resonance. Complete stability diagrams are derived for the case where spin torques and external magnetic fields are simultaneously present. Quantitative predictions are made for the critical currents and fields inducing magnetization switching; for the amplitude and frequency of magnetization self-oscillations; for the conditions leading to hysteretic transitions between self-oscillations and stationary states

  1. Theory of current-induced spin polarization in an electron gas

    Science.gov (United States)

    Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

    2017-05-01

    We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

  2. New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

    2013-08-15

    Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

  3. New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

    2013-01-01

    Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

  4. Fermi wave vector for the partially spin-polarized composite-fermion Fermi sea

    Science.gov (United States)

    Balram, Ajit C.; Jain, J. K.

    2017-12-01

    The fully spin-polarized composite-fermion (CF) Fermi sea at the half-filled lowest Landau level has a Fermi wave vector kF*=√{4 π ρe } , where ρe is the density of electrons or composite fermions, supporting the notion that the interaction between composite fermions can be treated perturbatively. Away from ν =1 /2 , the area is seen to be consistent with kF*=√{4 π ρe } for ν 1 /2 , where ρh is the density of holes in the lowest Landau level. This result is consistent with particle-hole symmetry in the lowest Landau level. We investigate in this article the Fermi wave vector of the spin-singlet CF Fermi sea (CFFS) at ν =1 /2 , for which particle-hole symmetry is not a consideration. Using the microscopic CF theory, we find that for the spin-singlet CFFS the Fermi wave vectors for up- and down-spin CFFSs at ν =1 /2 are consistent with kF*↑,↓=√{4 π ρe↑,↓ } , where ρe↑=ρe↓=ρe/2 , which implies that the residual interactions between composite fermions do not cause a nonperturbative correction for spin-singlet CFFS either. Our results suggest the natural conjecture that for arbitrary spin polarization the CF Fermi wave vectors are given by kF*↑=√{4 π ρe↑ } and kF*↓=√{4 π ρe↓ } .

  5. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  6. New directions in the theory of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Koelman, J.M.V.A.

    1988-01-01

    The three chapters of this thesis dealing with collisions between hydrogen (or deuterium) atoms in their ground state, each treat a different development in the theory of atomic hydrogen or deuterium gas. The decay due to interatomic collisions hindered till now all attempts to reach the low temperature, high-density regime where effects due to degeneracy are expected to show up. In ch. 2 a simple way out is presented for the case of Fermi gases: In spin-polarized Fermi systems at very low temperatures collisions are much effective than in Bose systems. For the Fermi gas, consisting of magnetically confined deuterium atoms, it appears that fast spin-exchange collisions automatically lead to a completely spin-polarized gas for which the spin-relaxation limited lifetime increases dramatically with decreasing temperature. As also the ratio of internal thermalization rate over decay rate increases with decreasing temperature, this gas can be cooled by forced evaporation down to very low temperatures. In ch. 3 it iis shown that the nuclear spin dynamics due to the hyperfine interaction during collisions, strongly limits the improvement in frequency stability attainable by H masers operating at low temperatures. In ch. 4 the phenomenon of spin waves is studied. It is shown that, despite the fact that interactions between two atoms are nuclear-spin independent, the outcome of a scattering event does not depend on the nuclear spins involved due to the particle indistinguishability effects at low collision energies. This effect gives rise to quantum phenomena on a macroscopic scale via the occurrence of spin waves. (author). 185 refs.; 34 figs

  7. Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

    2010-01-01

    We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

  8. Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Xiaole [Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Chen, Xianfeng [The State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L., E-mail: clgao@sjtu.edu.cn; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China); Luo, Weidong, E-mail: wdluo@sjtu.edu.cn [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Institute of Natural Sciences, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

    2016-02-08

    Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations.

  9. Another way of looking at bonding on bimetallic surfaces: the role of spin polarization of surface metal d states

    International Nuclear Information System (INIS)

    Escano, M C; Nguyen, T Q; Nakanishi, H; Kasai, H

    2009-01-01

    The nature of electronic and chemical properties of an unstrained Pt monolayer on a 3d transition metal substrate, M (M = Cr, Mn, Fe), is studied using spin-polarized density functional theory calculations. High spin polarization of Pt d states is noted, verifying the magnetization induced on Pt, which is observed to be responsible for redirecting the analysis of bond formation on a metal surface towards a different perspective. While the shift in the Pt d band center (the average energy of the Pt d band, commonly used to predict the reactivity of surfaces) does give the expected trend in adsorbate (oxygen) chemisorption energy across the bimetallic surfaces in this work, our results show that for spin-polarized Pt d states, the variation in strength of adsorption with respect to the Fermi level density of states is more predictive of Pt chemisorption properties. Hence, this study introduces a scheme for analyzing trends in reactivity of bimetallic surfaces where adsorption energies are used as reactivity parameters and where spin polarization effects cannot be neglected. (fast track communication)

  10. Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Zhang, K. F.; Yang, Fang; Song, Y. R.; Zhang, Xiaole; Chen, Xianfeng; Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng; Luo, Weidong

    2016-01-01

    Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations

  11. Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals

    Science.gov (United States)

    Gehlmann, Mathias; Aguilera, Irene; Bihlmayer, Gustav; Młyńczak, Ewa; Eschbach, Markus; Döring, Sven; Gospodarič, Pika; Cramm, Stefan; Kardynał, Beata; Plucinski, Lukasz; Blügel, Stefan; Schneider, Claus M.

    2016-06-01

    Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS2 bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES), we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method, we find that these valence band states at the point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS2, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS2 can be accessed without thinning it down to the monolayer limit.

  12. New techniques of positron annihilation

    International Nuclear Information System (INIS)

    1983-02-01

    Studies on new techniques of positron annihilation and its application to various fields are presented. First, production of slow positron and its characteristic features are described. The slow positron can be obtained from radioisotopes by using a positron moderator, proton beam bombardment on a boron target, and pair production by using an electron linear accelerator. Bright enhancement of the slow positron beam is studied. Polarized positron beam can be used for the study of the momentum distribution of an electron in ferromagnetic substances. Production of polarized positrons and measurements of polarization are discussed. Various phases of interaction between slow positrons and atoms (or molecules) are described. A comparative study of electron scavenging effects on luminescence and on positronium formation in cyclohexane is presented. The positron annihilation phenomena are applicable for the surface study. The microscopic information on the surface of porous material may be obtained. The slow positrons are also useful for the surface study. Production and application of slow muon (positive and negative) are presented in this report. (Kato, T.)

  13. Onset of Spin Polarization in Four-Gate Quantum Point Contacts

    Science.gov (United States)

    Jones, Alex

    A series of simulations which utilize a Non-equilibrium Green's function (NEGF) formalism is suggested which can provide indirect evidence of the fine and non-local electrostatic tuning of the onset of spin polarization in two closely spaced quantum point contacts (QPCs) that experience a phenomenon known as lateral spin-orbit coupling (LSOC). Each of the QPCs that create the device also has its own pair of side gates (SGs) which are in-plane with the device channel. Numerical simulations of the conductance of the two closely spaced QPCs or four-gate QPC are carried out for different biasing conditions applied to two leftmost and rightmost SGs. Conductance plots are then calculated as a function of the variable, Vsweep, which is the common sweep voltage applied to the QPC. When Vsweep is only applied to two of the four side gates, the plots show several conductance anomalies, i.e., below G0 = 2e2/h, characterized by intrinsic bistability, i.e., hysteresis loops due to a difference in the conductance curves for forward and reverse common voltage sweep simulations. The appearance of hysteresis loops is attributed to the co-existence of multistable spin textures in the narrow channel of the four-gate QPC. The shape, location, and number of hysteresis loops are very sensitive to the biasing conditions on the four SGs. The shape and size of the conductance anomalies and hysteresis loops are shown to change when the biasing conditions on the leftmost and rightmost SGs are swapped, a rectifying behavior providing an additional indirect evidence for the onset of spontaneous spin polarization in nanoscale devices made of QPCs. The results of the simulations reveal that the occurrence and fine tuning of conductance anomalies in QPC structures are highly sensitive to the non-local action of closely spaced SGs. It is therefore imperative to take into account this proximity effect in the design of all electrical spin valves making use of middle gates to fine tune the spin

  14. The limits of application of variable-energy slow positron beams for investigating TiN hard coatings prepared by PVD

    International Nuclear Information System (INIS)

    Marek, T.; Suevegh, K.; Vertes, A.; Szeles, Cs.; Lynn, K.G.

    2000-01-01

    Samples of TiN hard coatings prepared by physical vapour deposition (PVD) were investigated by means of depth-sensitive positron annihilation spectroscopy. The results indicate that the samples are at the limits of the applicability of this method presumably due to the high defect concentration. Though the samples are thoroughly characterized by other independent methods, they might not be sufficient to explain all aspects of positron-solid interactions in these cases. (author)

  15. Composition controlled spin polarization in Co{sub 1-x}Fe{sub x}S{sub 2} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Leighton, C [Department of Chemical Engineering and Materials Science, University of Minnesota (United States); Manno, M [Department of Chemical Engineering and Materials Science, University of Minnesota (United States); Cady, A [Advanced Photon Source, Argonne National Laboratory (United States); Freeland, J W [Advanced Photon Source, Argonne National Laboratory (United States); Wang, L [Department of Chemical Engineering and Materials Science, University of Minnesota (United States); Umemoto, K [Department of Chemical Engineering and Materials Science, University of Minnesota (United States); Wentzcovitch, R M [Department of Chemical Engineering and Materials Science, University of Minnesota (United States); Chen, T Y [Department of Physics and Astronomy, Johns Hopkins University (United States); Chien, C L [Department of Physics and Astronomy, Johns Hopkins University (United States); Kuhns, P L [National High Magnetic Field Laboratory, Florida State University (United States); Hoch, M J R [National High Magnetic Field Laboratory, Florida State University (United States); Reyes, A P [National High Magnetic Field Laboratory, Florida State University (United States); Moulton, W G [National High Magnetic Field Laboratory, Florida State University (United States); Dahlberg, E D [School of Physics and Astronomy, University of Minnesota (United States); Checkelsky, J [Physics Department, Harvey Mudd College (United States); Eckert, J [Physics Department, Harvey Mudd College (United States)

    2007-08-08

    The transition metal (TM) chalcogenides of the form TMX{sub 2} (X = S or Se) have been studied for decades due to their interesting electronic and magnetic properties such as metamagnetism and metal-insulator transitions. In particular, the Co{sub 1-x}Fe{sub x}S{sub 2} alloys were the subject of investigation in the 1970s due to general interest in itinerant ferromagnetism. In recent years (2000-present) it has been shown, both by electronic structure calculations and detailed experimental investigations, that Co{sub 1-x}Fe{sub x}S{sub 2} is a model system for the investigation of highly spin polarized ferromagnetism. The radically different electronic properties of the two endpoint compounds (CoS{sub 2} is a narrow bandwidth ferromagnetic metal, while FeS{sub 2} is a diamagnetic semiconductor), in a system forming a substitutional solid solution allows for composition control of the Fermi level relative to the spin split bands, and therefore composition-controlled conduction electron spin polarization. In essence, the recent work has shown that the concept of 'band engineering' can be applied to half-metallic ferromagnets and that high spin polarization can be deliberately engineered. Experiments reveal tunability in both sign and magnitude of the spin polarization at the Fermi level, with maximum values obtained to date of 85% at low temperatures. In this paper we review the properties of Co{sub 1-x}Fe{sub x}S{sub 2} alloys, with an emphasis on properties of relevance to half-metallicity. Crystal structure, electronic structure, synthesis, magnetic properties, transport properties, direct probes of the spin polarization, and measurements of the total density of states at the Fermi level are all discussed. We conclude with a discussion of the factors that influence, or even limit, the spin polarization, along with a discussion of opportunities and problems for future investigation, particularly with regard to fundamental studies of spintronic devices.

  16. Role of temperature on static correlational properties in a spin-polarized electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Arora, Priya; Moudgil, R. K., E-mail: rkmoudgil@kuk.ac.in [Department of Physics, Kurukshetra University, Kurukshetra – 136 119 (India); Kumar, Krishan [S. D. College (Lahore), Ambala Cantt. - 133001 (India)

    2016-05-06

    We have studied the effect of temperature on the static correlational properties of a spin-polarized three-dimensional electron gas (3DEG) over a wide coupling and temperature regime. This problem has been very recently studied by Brown et al. using the restricted path-integral Monte Carlo (RPIMC) technique in the warm-dense regime. To this endeavor, we have used the finite temperature version of the dynamical mean-field theory of Singwi et al, the so-called quantum STLS (qSTLS) approach. The static density structure factor and the static pair-correlation function are calculated, and compared with the RPIMC simulation data. We find an excellent agreement with the simulation at high temperature over a wide coupling range. However, the agreement is seen to somewhat deteriorate with decreasing temperature. The pair-correlation function is found to become small negative for small electron separation. This may be attributed to the inadequacy of the mean-field theory in dealing with the like spin electron correlations in the strong-coupling domain. A nice agreement with RPIMC data at high temperature seems to arise due to weakening of both the exchange and coulomb correlations with rising temperature.

  17. Origin and enhancement of spin polarized current in diluted magnetic oxides by oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw; Yang, Kung-Shang; Tsao, Yao-Chung; Dwivedi, G. D.; Lin, Cheng-Pang [Department of Physics, National Sun Yat-Sen University, 70, Lienhai Road, Gushan District, Kaohsiung 804, Taiwan (China); Sun, Shih-Jye [Department of Applied Physics, National Kaohsiung University, 700, Gaoxiongdaxue Rd., Nanzi District, Kaohsiung 811, Taiwan (China); Lin, L. K.; Lee, S. F. [Institute of Physics, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan (China)

    2016-04-04

    Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (V{sub O}) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1%–30%)H{sub 2}]. We found that the conductivity increases with an increase of V{sub O} via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of V{sub O} and increase in its concentration. The transport measurement shows that by manipulating V{sub O}, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%.

  18. Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

    Science.gov (United States)

    Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

    2018-05-10

    Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

  19. Effect of the anisotropy of the electron g-factor in spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh); Gray, E. MacA. [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2010-02-15

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency ({Omega}) and decay rate ({beta}) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g{sub e}) (i.e. unequal values of the longitudinal (g{sub e||}) and transverse (g{sub e}-perpendicular) components of g{sub e}) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in {Omega} upon deviation of the magnetic field from the VC relates to the anisotropy of g{sub e} (g{sub e||} and g{sub e}-perpendicular) resulting from the quantum confinement effect. However, the angular dependence on {beta} is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  20. Muonium spin exchange in spin-polarized media: Spin-flip and -nonflip collisions

    International Nuclear Information System (INIS)

    Senba, M.

    1994-01-01

    The transverse relaxation of the muon spin in muonium due to electron spin exchange with a polarized spin-1/2 medium is investigated. Stochastic calculations, which assume that spin exchange is a Poisson process, are carried out for the case where the electron spin polarization of the medium is on the same axis as the applied field. Two precession signals of muonium observed in intermediate fields (B>30 G) are shown to have different relaxation rates which depend on the polarization of the medium. Furthermore, the precession frequencies are shifted by an amount which depends on the spin-nonflip rate. From the two relaxation rates and the frequency shift in intermediate fields, one can determine (i) the encounter rate of muonium and the paramagnetic species, (ii) the polarization of the medium, and most importantly (iii) the quantum-mechanical phase shift (and its sign) associated with the potential energy difference between electron singlet and triplet encounters. Effects of spin-nonflip collisions on spin dynamics are discussed for non-Poisson as well as Poisson processes. In unpolarized media, the time evolution of the muon spin in muonium is not influenced by spin-nonflip collisions, if the collision process is Poissonian. This seemingly obvious statement is not true anymore in non-Poissonian processes, i.e., it is necessary to specify both spin-flip and spin-nonflip rates to fully characterize spin dynamics

  1. h-BN/graphene van der Waals vertical heterostructure: a fully spin-polarized photocurrent generator.

    Science.gov (United States)

    Tao, Xixi; Zhang, Lei; Zheng, Xiaohong; Hao, Hua; Wang, Xianlong; Song, Lingling; Zeng, Zhi; Guo, Hong

    2017-12-21

    By constructing transport junctions using graphene-based van der Waals (vdW) heterostructures in which a zigzag-edged graphene nanoribbon (ZGNR) is sandwiched between two hexagonal boron-nitride sheets, we computationally demonstrate a new scheme for generating perfect spin-polarized quantum transport in ZGNRs by light irradiation. The mechanism lies in the lift of spin degeneracy of ZGNR induced by the stagger potential it receives from the BN sheets and the subsequent possibility of single spin excitation of electrons from the valence band to the conduction band by properly tuning the photon energy. This scheme is rather robust in that we always achieve desirable results irrespective of whether we decrease or increase the interlayer distance by applying compressive or tensile strain vertically to the sheets or shift the BN sheets in-plane relative to the graphene nanoribbons. More importantly, this scheme overcomes the long-standing difficulties in traditional ways of using solely electrical field or chemical modification for obtaining half-metallic transport in ZGNRs and thus paves a more feasible way for their application in spintronics.

  2. Calculation of nuclear-spin-relaxation rate for spin-polarized atomic hydrogen

    International Nuclear Information System (INIS)

    Ahn, R.M.C.; Eijnde, J.P.H.W.V.; Verhaar, B.J.

    1983-01-01

    Approximations introduced in previous calculations of spin relaxation for spin-polarized atomic hydrogen are investigated by carrying out a more exact coupled-channel calculation. With the exception of the high-temperature approximation, the approximations turn out to be justified up to the 10 -3 level of accuracy. It is shown that at the lowest temperatures for which experimental data are available, the high-temperature limit underestimates relaxation rates by a factor of up to 2. For a comparison with experimental data it is also of interest to pay attention to the expression for the atomic hydrogen relaxation rates in terms of transition amplitudes for two-particle collisions. Discrepancies by a factor of 2 among previous derivations of relaxation rates are pointed out. To shed light on these discrepancies we present two alternative derivations in which special attention is paid to identical-particle aspects. Comparing with experiment, we find our theoretical volume relaxation rate to be in better agreement with measured values than that obtained by other groups. The theoretical surface relaxation rate, however, still shows a discrepancy with experiment by a factor of order 50

  3. Laser-driven source of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Poelker, M.

    1995-01-01

    A laser-driven source of spin-polarized hydrogen (H) and deuterium (D) that relies on the technique of optical pumping spin exchange has been constructed. In this source, H or D atoms and potassium atoms flow continuously through a drifilm-coated spin-exchange cell where potassium atoms are optically pumped with circularly-polarized laser light in a high magnetic field. The H or D atoms become polarized through spin-exchange collisions with polarized potassium atoms. High electron polarization (∼80%) has been measured for H and D atoms at flow rates ∼2x10 17 atoms/s. Lower polarization values are measured for flow rates exceeding 1x10 18 atoms/s. In this paper, we describe the performance of the laser-driven source as a function of H and D atomic flow rate, magnetic field strength, alkali density and pump-laser power. Polarization measurements as a function of flow rate and magnetic field suggest that, despite a high magnetic field, atoms within the optical-pumping spin-exchange apparatus evolve to spin-temperature equilibrium which results in direct polarization of the H and D nuclei. (orig.)

  4. Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

    Science.gov (United States)

    Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

    2011-02-02

    Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

  5. Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

    Science.gov (United States)

    Phark, Soo-Hyon; Sander, Dirk

    2017-01-01

    Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

  6. Spin-polarized transport through single-molecule magnet Mn6 complexes

    KAUST Repository

    Cremades, Eduard

    2013-01-01

    The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green\\'s function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

  7. Potential spin-polarized transport in gold-doped armchair graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Pankaj, E-mail: pankajs@iiitm.ac.in [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015, MP (India); Dhar, Subhra [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015, MP (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur 482005 (India)

    2015-04-17

    Based on NEGF-DFT computations, systematic investigation of electronic, magnetic and transport properties of AGNRs are done by employing Au through different doping mechanisms. Remarkable Au–AGNR bonding is observed in case of substitution due to the presence of impurity at the edges. Both substitution and adsorption of Au on AGNR surface induce significant changes in the electronic spin transport of the sp{sup 2} hybridized carbon sheets. AGNRs are semiconducting with lower total energy for the FM configuration, and the I–V characteristics reveal semiconductor to metal transition of Au-doped AGNR. The spin injection is voltage controlled in all the investigated Au-doped AGNRs. - Highlights: • Edge Au-substitution promotes semiconductor–metal transition in AGNR. • NDR due to bias-dependent transmission in Au-substituted AGNRs. • Voltage controlled spin injection in all investigated Au-doped AGNRs. • Strong spin polarization occurs at 0.5 V in Au-hole adsorbed AGNRs.

  8. Spontaneous spin polarization and charge localization in metal nanowires: the role of a geometric constriction

    Energy Technology Data Exchange (ETDEWEB)

    Cortes-Huerto, R; Ballone, P [Atomistic Simulation Centre, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom)

    2010-07-28

    An idealized jellium model of conducting nanowires with a geometric constriction is investigated by density functional theory (DFT) in the local spin density (LSD) approximation. The results reveal a fascinating variety of spin and charge patterns arising in wires of sufficiently low (r{sub s} {>=} 15) average electron density, pinned at the indentation by an apparent attractive interaction with the constriction. The spin-resolved frequency-dependent conductivity shows a marked asymmetry in the two spin channels, reflecting the spontaneous spin polarization around the wire neck. The relevance of the computational results is discussed in relation to the so-called 0.7 anomaly found by experiments in the low-frequency conductivity of nanowires at near-breaking conditions (see 2008 J. Phys.: Condens Matter 20, special issue on the 0.7 anomaly). Although our mean-field approach cannot account for the intrinsic many-body effects underlying the 0.7 anomaly, it still provides a diagnostic tool to predict impending transitions in the electronic structure.

  9. Rotatable spin-polarized electron source for inverse-photoemission experiments

    International Nuclear Information System (INIS)

    Stolwijk, S. D.; Wortelen, H.; Schmidt, A. B.; Donath, M.

    2014-01-01

    We present a ROtatable Spin-polarized Electron source (ROSE) for the use in spin- and angle-resolved inverse-photoemission (SR-IPE) experiments. A key feature of the ROSE is a variable direction of the transversal electron beam polarization. As a result, the inverse-photoemission experiment becomes sensitive to two orthogonal in-plane polarization directions, and, for nonnormal electron incidence, to the out-of-plane polarization component. We characterize the ROSE and test its performance on the basis of SR-IPE experiments. Measurements on magnetized Ni films on W(110) serve as a reference to demonstrate the variable spin sensitivity. Moreover, investigations of the unoccupied spin-dependent surface electronic structure of Tl/Si(111) highlight the capability to analyze complex phenomena like spin rotations in momentum space. Essentially, the ROSE opens the way to further studies on complex spin-dependent effects in the field of surface magnetism and spin-orbit interaction at surfaces

  10. Low energy collisions of spin-polarized metastable argon atoms with ground state argon atoms

    Science.gov (United States)

    Taillandier-Loize, T.; Perales, F.; Baudon, J.; Hamamda, M.; Bocvarski, V.; Ducloy, M.; Correia, F.; Fabre, N.; Dutier, G.

    2018-04-01

    The collision between a spin-polarized metastable argon atom in Ar* (3p54s, 3P2, M = +2) state slightly decelerated by the Zeeman slower-laser technique and a co-propagating thermal ground state argon atom Ar (3p6, 1S0), both merged from the same supersonic beam, but coming through adjacent slots of a rotating disk, is investigated at the center of mass energies ranging from 1 to 10 meV. The duration of the laser pulse synchronised with the disk allows the tuning of the relative velocity and thus the collision energy. At these sub-thermal energies, the ‘resonant metastability transfer’ signal is too small to be evidenced. The explored energy range requires using indiscernibility amplitudes for identical isotopes to have a correct interpretation of the experimental results. Nevertheless, excitation transfers are expected to increase significantly at much lower energies as suggested by previous theoretical predictions of potentials 2g(3P2) and 2u(3P2). Limits at ultra-low collisional energies of the order of 1 mK (0.086 μeV) or less, where gigantic elastic cross sections are expected, will also be discussed. The experimental method is versatile and could be applied using different isotopes of Argon like 36Ar combined with 40Ar, as well as other rare gases among which Krypton should be of great interest thanks to the available numerous isotopes present in a natural gas mixture.

  11. Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells

    International Nuclear Information System (INIS)

    Hong, S. P.; Yi, K. S.; Quinn, J. J.

    2000-01-01

    The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society

  12. Dynamically polarized hydrogen target as a broadband, wavelength-independent thermal neutron spin polarizer

    International Nuclear Information System (INIS)

    Zhao Jinkui; Garamus, Vasil M.; Mueller, Wilhelm; Willumeit, Regine

    2005-01-01

    A hydrogen-rich sample with dynamically polarized hydrogen nuclei was tested as a wavelength-independent neutron transmission spin polarizer. The experiment used a modified setup of the dynamic nuclear polarization target station at the GKSS research center. The standard solvent sample at the GKSS DNP station was used. It is 2.8mm thick and consists of 43.4wt% water, 54.6wt% glycerol, and 2wt% of EHBA-Cr(v) complex. The wavelength of the incident neutrons for the transmission experiment was λ=8.1A with Δλ/λ=10%. The polarization of neutron beam after the target sample was analyzed with a supermirror analyzer. A neutron polarization of -52% was achieved at the hydrogen polarization of -69%. Further experiments will test the feasibility of other hydrogen-rich materials, such as methane, as the polarizer. A theoretical calculation shows that a polarized methane target would allow over 95% neutron polarizations with more than 30% transmission

  13. Self-sustained spin-polarized current oscillations in multiquantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, Ramon [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, Manuel; Bonilla, Luis L [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Platero, Gloria [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco (Spain)], E-mail: escobedo@unican.es, E-mail: manuel.carretero@uc3m.es, E-mail: bonilla@ing.uc3m.es, E-mail: gplatero@icmm.csic.es

    2009-01-15

    Nonlinear transport through diluted magnetic semiconductor nanostructures is investigated. We have considered a II-VI multiquantum well nanostructure whose wells are selectively doped with Mn. The response to a dc voltage bias may be either a stationary or an oscillatory current. We have studied the transition from stationary to time-dependent current as a function of the doping density and the number of quantum wells. Analysis and numerical solution of a nonlinear spin transport model shows that the current in a structure without magnetic impurities is stationary, whereas current oscillations may appear if at least one well contains magnetic impurities. For long structures having two wells with magnetic impurities, a detailed analysis of nucleation of charge dipole domains shows that self-sustained current oscillations are caused by repeated triggering of dipole domains at the magnetic wells and motion towards the collector. Depending on the location of the magnetic wells and the voltage, dipole domains may be triggered at both wells or at only one. In the latter case, the well closer to the collector may inhibit domain motion between the first and the second well inside the structure. Our study could allow design of oscillatory spin-polarized current injectors.

  14. Electrically tunable spin polarization in silicene: A multi-terminal spin density matrix approach

    International Nuclear Information System (INIS)

    Chen, Son-Hsien

    2016-01-01

    Recent realized silicene field-effect transistor yields promising electronic applications. Using a multi-terminal spin density matrix approach, this paper presents an analysis of the spin polarizations in a silicene structure of the spin field-effect transistor by considering the intertwined intrinsic and Rashba spin–orbit couplings, gate voltage, Zeeman splitting, as well as disorder. Coexistence of the stagger potential and intrinsic spin–orbit coupling results in spin precession, making any in-plane polarization directions reachable by the gate voltage; specifically, the intrinsic coupling allows one to electrically adjust the in-plane components of the polarizations, while the Rashba coupling to adjust the out-of-plan polarizations. Larger electrically tunable ranges of in-plan polarizations are found in oppositely gated silicene than in the uniformly gated silicene. Polarizations in different phases behave distinguishably in weak disorder regime, while independent of the phases, stronger disorder leads to a saturation value. - Highlights: • Density matrix with spin rotations enables multi-terminal arbitrary spin injections. • Gate-voltage tunable in-plane polarizations require intrinsic SO coupling. • Gate-voltage tunable out-of-plane polarizations require Rashba SO coupling. • Oppositely gated silicene yields a large tunable range of in-plan polarizations. • Polarizations in different phases behave distinguishably only in weak disorder.

  15. Laser-assisted spin-polarized transport in graphene tunnel junctions

    International Nuclear Information System (INIS)

    Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

    2012-01-01

    The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

  16. Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

    International Nuclear Information System (INIS)

    Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

    2009-01-01

    Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

  17. Period-doubling bifurcation cascade observed in a ferromagnetic nanoparticle under the action of a spin-polarized current

    Energy Technology Data Exchange (ETDEWEB)

    Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Kushnir, Mykola Ya. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine); Morales-Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Rusyn, Volodymyr [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine)

    2016-04-01

    We report on complex magnetization dynamics in a forced spin valve oscillator subjected to a varying magnetic field and a constant spin-polarized current. The transition from periodic to chaotic magnetic motion was illustrated with bifurcation diagrams and Hausdorff dimension – the methods developed for dissipative self-organizing systems. It was shown that bifurcation cascades can be obtained either by tuning the injected spin-polarized current or by changing the magnitude of applied magnetic field. The order–chaos transition in magnetization dynamics can be also directly observed from the hysteresis curves. The resulting complex oscillations are useful for development of spin-valve devices operating in harmonic and chaotic modes.

  18. Control phase shift of spin-wave by spin-polarized current and its application in logic gates

    International Nuclear Information System (INIS)

    Chen, Xiangxu; Wang, Qi; Liao, Yulong; Tang, Xiaoli; Zhang, Huaiwu; Zhong, Zhiyong

    2015-01-01

    We proposed a new ways to control the phase shift of propagating spin waves by applying a local spin-polarized current on ferromagnetic stripe. Micromagnetic simulation showed that a phase shift of about π can be obtained by designing appropriate width and number of pinned magnetic layers. The ways can be adopted in a Mach-Zehnder-type interferometer structure to fulfill logic NOT gates based on spin waves. - Highlights: • Spin-wave phase shift can be controlled by a local spin-polarized current. • Spin-wave phase shift increased with the increasing of current density. • Spin-wave phase shift can reach about 0.3π at a particular current density. • The ways can be used in a Mach-Zehnder-type interferometer to fulfill logic gates

  19. Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

    Science.gov (United States)

    Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

    2011-10-28

    The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

  20. Spin polarization driven by a charge-density wave in monolayer 1T−TaS2

    KAUST Repository

    Zhang, Qingyun

    2014-08-06

    Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer T-phase TaS2. We demonstrate that a charge-density wave is energetically favorable at low temperature, similar to bulk 1T-TaS2. Electron-phonon coupling is found to be essential for the lattice reconstruction. The charge-density wave results in a strong localization of the electronic states near the Fermi level and consequently in spin polarization, transforming the material into a magnetic semiconductor with enhanced electronic correlations. The combination of inherent spin polarization with a semiconducting nature distinguishes the monolayer fundamentally from the bulk compound as well as from other two-dimensional transition metal dichalcogenides. Monolayer T-phase TaS2 therefore has the potential to enable two-dimensional spintronics. © 2014 American Physical Society.

  1. Measuring the spin polarization of alkali-metal atoms using nuclear magnetic resonance frequency shifts of noble gases

    Directory of Open Access Journals (Sweden)

    X. H. Liu

    2015-10-01

    Full Text Available We report a novel method of measuring the spin polarization of alkali-metal atoms by detecting the NMR frequency shifts of noble gases. We calculated the profile of 87Rb D1 line absorption cross sections. We then measured the absorption profile of the sample cell, from which we calculated the 87Rb number densities at different temperatures. Then we measured the frequency shifts resulted from the spin polarization of the 87Rb atoms and calculated its polarization degrees at different temperatures. The behavior of frequency shifts versus temperature in experiment was consistent with theoretical calculation, which may be used as compensative signal for the NMRG closed-loop control system.

  2. Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

    2014-10-01

    The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

  3. Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

    Science.gov (United States)

    Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

    2018-04-01

    The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

  4. Non-dipole effects in spin polarization of photoelectrons from 3d electrons of Xe, Cs and Ba

    Energy Technology Data Exchange (ETDEWEB)

    Amusia, M Ya [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Cherepkov, N A [State University of Aerospace Instrumentation, St. Petersburg 190000 (Russian Federation); Chernysheva, L V [A F Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Felfli, Z [Department of Physics and Center for Theoretical Studies of Physical Systems, Clark Atlanta University, Atlanta GA 30314 (United States); Msezane, A Z [Department of Physics and Center for Theoretical Studies of Physical Systems, Clark Atlanta University, Atlanta GA 30314 (United States)

    2005-04-28

    The non-dipole contribution to spin polarization of photoelectrons from Xe, Cs and Ba 3d{sub 5/2} and 3d{sub 3/2} levels is calculated. The calculation is carried out within the framework of a modified version of the spin-polarized random phase approximation with exchange. The effects of relaxation of excited electrons due to the 3d-vacancy creation are also accounted for. It is demonstrated that the parameters that characterize the photoelectron angular distribution as functions of the incoming photon energy, although being predictably small, acquire additional peculiarities when the interaction between electrons that belong to the 3d{sub 5/2} and 3d{sub 3/2} components of the spin-orbit doublet is taken into account.

  5. On the possibility of contact-induced spin polarization in interfaces of armchair nanotubes with transition metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kuzubov, Alexander A. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Kovaleva, Evgenia A., E-mail: kovaleva.evgeniya1991@mail.ru [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Tomilin, Felix N.; Mikhaleva, Natalya S.; Kuklin, Artem V. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation)

    2015-12-15

    The interaction between armchair carbon and boron nitride nanotubes (NT) with ferromagnetic transition metal (TM) surfaces, namely, Ni(111) and Co(0001), was studied by means of density functional theory. Different configurations of composite compartments mutual arrangement were considered. Partial densities of states and spin density spatial distribution of optimized structures were investigated. Influence of ferromagnetic substrate on nanotubes’ electronic properties was discussed. The values of spin polarization magnitude at the Fermi level are also presented and confirm the patterns of spin density spatial distribution. - Highlights: • Interaction of armchair nanotubes with ferromagnetic metal surfaces was investigated. • Different configurations of nanotube's location were considered. • For all nanotubes the energy difference between configurations is negligible. • Nanotubes were found to be more or less spin-polarized regarding to the configuration. • BN nanotubes demonstrate vanishing of the band gap and contact-induced conductivity.

  6. Spin polarization driven by a charge-density wave in monolayer 1T−TaS2

    KAUST Repository

    Zhang, Qingyun; Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo

    2014-01-01

    Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer T-phase TaS2. We demonstrate that a charge-density wave is energetically favorable at low temperature, similar to bulk 1T-TaS2. Electron-phonon coupling is found to be essential for the lattice reconstruction. The charge-density wave results in a strong localization of the electronic states near the Fermi level and consequently in spin polarization, transforming the material into a magnetic semiconductor with enhanced electronic correlations. The combination of inherent spin polarization with a semiconducting nature distinguishes the monolayer fundamentally from the bulk compound as well as from other two-dimensional transition metal dichalcogenides. Monolayer T-phase TaS2 therefore has the potential to enable two-dimensional spintronics. © 2014 American Physical Society.

  7. Insight into electronic, mechanical and transport properties of quaternary CoVTiAl: Spin-polarized DFT + U approach

    Energy Technology Data Exchange (ETDEWEB)

    Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, D.C., E-mail: sosfizix@gmail.com

    2017-07-15

    Highlights: • 100% spin-polarized material important for the application in spintronics. • It is ferromagnetic and ductile in nature. • Shows semiconducting behavior with a band gap of 1.06 eV. • Possibly efficient high temperature thermoelectric material. - Abstract: We present a preliminary investigation of band structure and thermoelectric properties of new quaternary CoVTiAl Heusler alloy. Structural, magnetic property and 100% spin polarization of equiatomic CoVTiAl predicts ferromagnetic stable ground state. Band profile outlines the indirect semiconducting behavior in spin down channel with band gap of 1.06 eV, and the magnetic moment of 3 µ{sub B} in accordance with Slater-Pauling rule. To evaluate the accuracy of different approximations in predicting thermoelectric properties, the comparison with available experimental data is made which shows fair agreement for the transport coefficients. The high temperature (800 K) positive Seebeck coefficient of 73.71 µV/K describes the p-type character of the material with high efficiency due to highly influential semiconducting behavior around the Fermi level. Considering the combination of 100% spin-polarization, high Seebeck coefficient and large figure of merit, ferromagnetic semiconducting CoVTiAl may prove as a potential candidate for high temperature thermoelectrics and an ideal spin source material for spintronic applications.

  8. Spin effects in the screening and Auger neutralization of He+ ions in a spin-polarized electron gas

    International Nuclear Information System (INIS)

    Alducin, M.; Diez Muino, R.; Juaristi, J.I.

    2005-01-01

    The screening of a He + ion embedded in a free electron gas is studied for different spin-polarizations of the medium. Density functional theory and the local spin density approximation are used to calculate the induced electronic density for each spin orientation, i.e. parallel or antiparallel to the spin of the electron bound to the ion. Since both the He + ion and the electron gas are spin-polarized, we analyze in detail the spin state of the screening cloud for the two different possibilities: the spin of the bound electron can be parallel to either the majority spin or the minority spin in the medium. Finally, the spin-dependent Kohn-Sham orbitals are used to calculate the Auger neutralization rate of the He + ion. The polarization of the Auger excited electron is influenced by the spin-polarization of the medium. The results are discussed in terms of the spin-dependent screening and the indistinguishability of electrons with the same spin state

  9. Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

    International Nuclear Information System (INIS)

    Lipperheide, R.; Wille, U.

    2006-01-01

    A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

  10. Effect of on-site Coulomb interaction on electronic and transport properties of 100% spin polarized CoMnVAs

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Tahir Mohiuddin; Gupta, Dinesh C., E-mail: sosfizix@gmail.com

    2017-08-01

    Highlights: • 100% spin-polarized material important for the application in spintronics. • Ferromagnetic nature. • Ductile in nature for mechanical applications. • Semiconducting behavior with a band gap of 0.55 eV in minority spin channel. • Possibly efficient thermoelectric material. - Abstract: The structural, electronic, magnetic and transport properties of a new quaternary Heusler alloy CoMnVAs have been investigated by employing generalized gradient approximation (GGA), modified Becke-Johnson (mBJ) and GGA with Hubbard U correction (GGA + U). The alloy is energetically more stable in ferromagnetic Y{sub 1} type structure. Elastic parameters reveal high anisotropy and ductile nature of the material. CoMnVAs shows half-metallic ferromagnet character with 100% spin polarization at Fermi level with band gap of 0.55 eV in the minority spin state. The alloy also possesses high electrical conductivity and Seebeck coefficients with 15 μVK{sup −1} at room temperature, achieving a figure of merit of 0.65 at high temperatures. The high degree of ductility, 100% spin polarization and large Seebeck coefficient, makes it an attractive candidate to be used in spin voltage generators and thermoelectric materials.

  11. Design and commissioning of an aberration-corrected ultrafast spin-polarized low energy electron microscope with multiple electron sources.

    Science.gov (United States)

    Wan, Weishi; Yu, Lei; Zhu, Lin; Yang, Xiaodong; Wei, Zheng; Liu, Jefferson Zhe; Feng, Jun; Kunze, Kai; Schaff, Oliver; Tromp, Ruud; Tang, Wen-Xin

    2017-03-01

    We describe the design and commissioning of a novel aberration-corrected low energy electron microscope (AC-LEEM). A third magnetic prism array (MPA) is added to the standard AC-LEEM with two prism arrays, allowing the incorporation of an ultrafast spin-polarized electron source alongside the standard cold field emission electron source, without degrading spatial resolution. The high degree of symmetries of the AC-LEEM are utilized while we design the electron optics of the ultrafast spin-polarized electron source, so as to minimize the deleterious effect of time broadening, while maintaining full control of electron spin. A spatial resolution of 2nm and temporal resolution of 10ps (ps) are expected in the future time resolved aberration-corrected spin-polarized LEEM (TR-AC-SPLEEM). The commissioning of the three-prism AC-LEEM has been successfully finished with the cold field emission source, with a spatial resolution below 2nm. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Monte Carlo studies of thermalization of electron-hole pairs in spin-polarized degenerate electron gas in monolayer graphene

    Science.gov (United States)

    Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

    2018-02-01

    Monte Carlo method is applied to the study of relaxation of excited electron-hole (e-h) pairs in graphene. The presence of background of spin-polarized electrons, with high density imposing degeneracy conditions, is assumed. To such system, a number of e-h pairs with spin polarization parallel or antiparallel to the background is injected. Two stages of relaxation: thermalization and cooling are clearly distinguished when average particles energy and its standard deviation σ _E are examined. At the very beginning of thermalization phase, holes loose energy to electrons, and after this process is substantially completed, particle distributions reorganize to take a Fermi-Dirac shape. To describe the evolution of and σ _E during thermalization, we define characteristic times τ _ {th} and values at the end of thermalization E_ {th} and σ _ {th}. The dependence of these parameters on various conditions, such as temperature and background density, is presented. It is shown that among the considered parameters, only the standard deviation of electrons energy allows to distinguish between different cases of relative spin polarizations of background and excited electrons.

  13. Relaxed electric dipole moments of polar molecules interacting with a slow positron: H{sub 2}O and CH{sub 3}X (X=F, Cl, Br)

    Energy Technology Data Exchange (ETDEWEB)

    Assafrao, Denise; Mohallem, Jose R, E-mail: rachid@fisica.ufmg.b [Laboratorio de Atomos e Moleculas Especiais, Departamento de FIsica, ICEx, Universidade Federal de Minas Gerais, PO Box 702, 30123-970, Belo Horizonte, MG (Brazil)

    2010-08-14

    The variation in the electric dipole moments of H{sub 2}O, CH{sub 3}F, CH{sub 3}Cl and CH{sub 3}Br as their geometries relax due to interaction with a positron is evaluated. The results are in good agreement with a recently observed empirical dependence of the positron binding energy on molecular properties (Danielson et al 2009 J. Phys. B: At. Mol. Opt. Phys. 42 235203). For binding energies larger than 100 meV relaxation could alter significantly the analysis of the binding, but it is in the prospect of generating effective potentials for positron scattering by molecules that the effect can be more important.

  14. A study of vacancy-type defects in B+-implanted SiO2/Si by a slow positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto.

    1989-01-01

    Variable-energy (0∼30 keV) positron beam studies have been carried out on 80 keV B + -implanted SiO 2 (43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B + -implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B + ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO 2 /Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage. (author)

  15. Slow Antihydrogen

    International Nuclear Information System (INIS)

    Gabrielse, G.; Speck, A.; Storry, C.H.; Le Sage, D.; Guise, N.; Larochelle, P.C.; Grzonka, D.; Oelert, W.; Schepers, G.; Sefzick, T.; Pittner, H.; Herrmann, M.; Walz, J.; Haensch, T.W.; Comeau, D.; Hessels, E.A.

    2004-01-01

    Slow antihydrogen is now produced by two different production methods. In Method I, large numbers of H atoms are produced during positron-cooling of antiprotons within a nested Penning trap. In a just-demonstrated Method II, lasers control the production of antihydrogen atoms via charge exchange collisions. Field ionization detection makes it possible to probe the internal structure of the antihydrogen atoms being produced - most recently revealing atoms that are too tightly bound to be well described by the guiding center atom approximation. The speed of antihydrogen atoms has recently been measured for the first time. After the requested overview, the recent developments are surveyed

  16. Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

    Directory of Open Access Journals (Sweden)

    M. Vahidi

    2014-04-01

    Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

  17. EDITORIAL: New materials with high spin polarization: half-metallic Heusler compounds

    Science.gov (United States)

    Felser, Claudia; Hillebrands, Burkard

    2007-03-01

    The development of magnetic Heusler compounds, specifically designed as materials for spintronic applications, has made tremendous progress in the very recent past [1-21]. Heusler compounds can be made as half-metals, showing a high spin polarization of the conduction electrons of up to 100% [1]. These materials are exceptionally well suited for applications in magnetic tunnel junctions acting, for example, as sensors for magnetic fields. The tunnelling magneto-resistance (TMR) effect is the relative change in the electrical resistance upon application of a small magnetic field. Tunnel junctions with a TMR effect of 580% at 4 K were reported by the group of Miyazaki and Ando [1], consisting of two Co2MnSi Heusler electrodes. High Curie temperatures were found in Co2 Heusler compounds with values up to 1120 K in Co2FeSi [2]. The latest results are for a TMR device made from the Co2FeAl0.5Si0.5 Heusler compound and working at room temperature with a TMR effect of 174% [3]. The first significant magneto-resistance effect was discovered in Co2Cr0.6Fe0.4Al (CCFA) in Mainz [4]. With the classical Heusler compound CCFA as one electrode, the record TMR effect at 4 K is 240% [5]. Positive and negative TMR values at room temperature utilizing magnetic tunnel junctions with one Heusler compound electrode render magnetic logic possible [6]. Research efforts exist, in particular, in Japan and in Germany. The status of research as of winter 2005 was compiled in a recent special volume of Journal of Physics D: Applied Physics [7-20]. Since then specific progress has been made on the issues of (i) new advanced Heusler materials, (ii) advanced characterization, and (iii) advanced devices using the new materials. In Germany, the Mainz and Kaiserslautern based Research Unit 559 `New Materials with High Spin Polarization', funded since 2004 by the Deutsche Forschungsgemeinschaft, is a basic science approach to Heusler compounds, and it addresses the first two topics in particular

  18. Creation, transport and detection of imprinted magnetic solitons stabilized by spin-polarized current

    Science.gov (United States)

    Loreto, R. P.; Moura-Melo, W. A.; Pereira, A. R.; Zhang, X.; Zhou, Y.; Ezawa, M.; de Araujo, C. I. L.

    2018-06-01

    With the recent proposition of skyrmion utilization in racetrack memories at room temperature, skyrmionics has become a very attractive field. However, for the stability of skyrmions, it is essential to incorporate the Dzyaloshinskii-Moriya interaction (DMI) and the out-of-plane magnetic field into the system. In this work, we explore a system without these interactions. First, we propose a controlled way for the creation of magnetic skyrmions and skyrmioniums imprinted on a ferromagnetic nanotrack via a nanopatterned nanodisk with the magnetic vortex state. Then we investigate the detachment of the imprinted spin textures from the underneath of the nanodisk, as well as its transport by the spin-transfer torque imposed by spin-polarized current pulses applied in the nanotrack. A prominent feature of the moving imprinted spin texture is that its topological number Q is oscillating around the averaged value of Q = 0 as if it is a resonant state between the skyrmions with Q = ± 1 and the bubble with Q = 0 . We may call it a resonant magnetic soliton (RMS). A RMS moves along a straight line since it is free from the skyrmion Hall effect. In our studied device, the same electrodes are employed to realize the imprinted spin texture detachment and its transport. In addition, we have investigated the interaction between the RMS and a magnetic tunnel junction sensor, where the passing of the RMS in the nanotrack can be well detected. Our results would be useful for the development of novel spintronic devices based on moveable spin textures.

  19. NMR investigations of surfaces and interfaces using spin-polarized xenon

    International Nuclear Information System (INIS)

    Gaede, H.C.; Lawrence Berkeley Lab., CA

    1995-07-01

    129 Xe NMR is potentially useful for the investigation of material surfaces, but has been limited to high surface area samples in which sufficient xenon can be loaded to achieve acceptable signal to noise ratios. In Chapter 2 conventional 129 Xe NMR is used to study a high surface area polymer, a catalyst, and a confined liquid crystal to determine the topology of these systems. Further information about the spatial proximity of different sites of the catalyst and liquid crystal systems is determined through two dimensional exchange NMR in Chapter 3. Lower surface area systems may be investigated with spin-polarized xenon, which may be achieved through optical pumping and spin exchange. Optically polarized xenon can be up to 10 5 times more sensitive than thermally polarized xenon. In Chapter 4 highly polarized xenon is used to examine the surface of poly(acrylonitrile) and the formation of xenon clathrate hydrates. An attractive use of polarized xenon is as a magnetization source in cross polarization experiments. Cross polarization from adsorbed polarized xenon may allow detection of surface nuclei with drastic enhancements. A non-selective low field thermal mixing technique is used to enhance the 13 C signal of CO 2 of xenon occluded in solid CO 2 by a factor of 200. High-field cross polarization from xenon to proton on the surface of high surface area polymers has enabled signal enhancements of ∼1,000. These studies, together with investigations of the efficiency of the cross polarization process from polarized xenon, are discussed in Chapter 5. Another use of polarized xenon is as an imaging contrast agent in systems that are not compatible with traditional contrast agents. The resolution attainable with this method is determined through images of structured phantoms in Chapter 6

  20. Quantum properties of spin polarized helium 3 optically oriented by a LNA laser

    International Nuclear Information System (INIS)

    Leduc, M.; Laloe, F.; Nacher, P.J.; Tastevin, G.; Daniels, J.M.; Betts, D.

    1986-01-01

    Spin polarized helium 3 (/sup 3/He increasing) and also atomic hydrogen (H decreasing) are systems exhibiting a number of unusual and interesting properties at low temperature. This is true even for dilute polarized gases in spite of the weakness of the nuclear magnetic interaction between atoms. The changes in the macroscopic properties of the gas with the nuclear polarization P are pure consequences of the indistinguishability of the particles and of the symmetrization principle in quantum mechanics. The transport properties of the gas, such as viscosity and thermal conductivity, have been calculated and found to be strongly dependent on P below a few kelvins. Spin transport in /sup 3/He increasing gives rise at low temperature to collective oscillatory modes: the transverse spin waves. Large changes are also expected with P in the case of more dense /sup 3/He fluids, such as an increase with P in the saturated vapor pressure. Optical pumping is a convenient technique for efficient polarization of the nuclear spins in /sup 3/He gas/sup 2/ making use of the 2/sup 3/S-2/sup 3/P atomic line at 1.08 μm. The arrival of cw tunable lasers in the near IR in the early 1980s gave a strong impulse to the buildup of experiments with a view to measuring quantum properties of /sup 3/He increasing at low temperature. Color center lasers (F/sup +//sub 2/ in NaF) provide P values up to 70%. They are now being replaced by more easy to handle LNA lasers which have given so far P in excess of 50% at room temperature. At low temperature, direct optical pumping of a /sup 3/He cell leads to poor P values; for that reason a different technique is used

  1. Feasibility studies of a polarized positron source based on the Bremsstrahlung of polarized electrons

    International Nuclear Information System (INIS)

    Dumas, J.

    2011-09-01

    The nuclear and high-energy physics communities have shown a growing interest in the availability of high current, highly-polarized positron beams. A sufficiently energetic polarized photon or lepton incident on a target may generate, via Bremsstrahlung and pair creation within a solid target foil, electron-positron pairs that should carry some fraction of the initial polarization. Recent advances in high current (> 1 mA) spin polarized electron sources at Jefferson Lab offer the perspective of creating polarized positrons from a low energy electron beam. This thesis discusses polarization transfer from electrons to positrons in the perspective of the design optimization of a polarized positron source. The PEPPo experiment, aiming at a measurement of the positron polarization from a low energy (< 10 MeV) highly spin polarized electron beam is discussed. A successful demonstration of this technique would provide an alternative scheme for the production of low energy polarized positrons and useful information for the optimization of the design of polarized positron sources in the sub-GeV energy range. (author)

  2. Vacancy defects in epitaxial La0.7Sr0.3MnO3 thin films probed by a slow positron beam

    International Nuclear Information System (INIS)

    Jin, S W; Zhou, X Y; Wu, W B; Zhu, C F; Weng, H M; Wang, H Y; Zhang, X F; Ye, B J; Han, R D

    2004-01-01

    Vacancy defects in epitaxial La 0.7 Sr 0.3 MnO 3 (LSMO) thin films on LaAlO 3 substrates were detected using a variable energy positron beam. The line-shape S parameter of the epitaxial thin films deposited at different oxygen pressures was measured as a function of the implanting positron energy E. Our results show that the S parameter of the films changes non-monotonically with their deposition oxygen pressures. For the films deposited at lower oxygen pressures, the increase in S value in the films is attributed to the increase in oxygen vacancies and/or related defect-V O complexes, and for those deposited at higher oxygen pressures, the larger S parameter of the films is caused by the grain boundaries and/or metallic ion vacancies. The surface morphology of the films was also characterized to analyse the open volume defects in the LSMO films

  3. Characterization of vacancy-type defects induced by the implantation of Se and Si ions into GaAs by a slow positron beam

    International Nuclear Information System (INIS)

    Fujii, Satoshi; Shikata, Shinichi; Wei Long; Tanigawa, Shoichiro.

    1992-01-01

    Variable-energy (0-30keV) positron beam studies have been carried out on 200 keV Se-implanted and 70 keV Si-implanted GaAs specimens before and after annealing for electrical activation. From the measurements of Doppler broadened profiles as a function of incident positron energy, it was found that vacancy clusters with high concentration were introduced in the annealed specimen after Se implantation. From the parallel measurement of electrical characteristics, a higher activation efficiency was found for the higher concentration of vacancy clusters. That fact implies that electrons supplied by the activation of Se also convert the charge state of As vacancies from positive to negative. In contrast, no vacancy clusters were introduced in the Si-implanted GaAs. (author)

  4. Direct observation of hopping induced spin polarization current in oxygen deficient Co-doped ZnO by Andreev reflection technique

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kung-Shang; Huang, Tzu-Yu; Dwivedi, G.D. [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Lin, Lu-Kuei; Lee, Shang-Fan [Taiwan Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Sun, Shih-Jye [Department of Applied Physics, National Kaohsiung University, Kaohsiung, Taiwan (China); Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

    2017-07-01

    Highlights: • Co-doped ZnO thin-films were grown with varying V{sub O} concentartion. • PCAR measurements were done to study the SPC. • High spin polarization was observed above a certain V{sub O} concentartion. • High V{sub O} samples provide a high density of completed percolation path. • This complete percolation path gives rise to high SPC. - Abstract: Oxygen vacancy induced ferromagnetic coupling in diluted magnetic oxide (DMO) semiconductors have been reported in several studies, but technologically more crucial spin-polarized current (SPC) is still under-developed in DMOs. Few studies have claimed that VRH mechanism can originate the SPC, but, how VRH mechanism associated with percolation path, is not clearly understood. We used Point-contact Andreev reflection (PCAR) technique to probe the SPC in Co-doped ZnO (CZO) films. Since the high resistance samples cause broadening in conductance(G)-voltage(V) curves, which may result in an unreliable evaluation of spin polarization, we include two extra parameters, (i) effective temperature and (ii) spreading resistance, for the simulation to avoid the uncertainty in extracting spin polarization. The effective G-V curves and higher spin polarization can be obtained above a certain oxygen vacancy concentration. The number of completed and fragmentary percolation paths is proportional to the concentration of oxygen vacancies. For low oxygen vacancy samples, the Pb-tip has a higher probability of covering fragmentary percolation paths than the complete ones, due to its small contact size. The completed paths may remain independent of one another and get polarized in different directions, resulting in lower spin-polarization value. High oxygen vacancy samples provide a high density of completed path, most of them link to one another by crossing over, and gives rise to high spin-polarization value.

  5. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  6. Observation of spin-polarized electron transport in Alq3 by using a low work function metal

    Science.gov (United States)

    Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

    2012-09-01

    We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

  7. Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

    2017-10-16

    We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

  8. Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

    Science.gov (United States)

    Schouteden, K; Muzychenko, D A; Van Haesendonck, C

    2008-07-01

    Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

  9. Effect of radiation damage on luminescence of erbium-implanted SiO sub 2 /Si studied by slow positron beam

    CERN Document Server

    Kawasuso, A; Hirata, K; Sekiguchi, T; Kobayashi, Y; Okada, S

    2000-01-01

    The effect of damage on 1.54 mu m luminescence for 30 keV-Er-implanted SiO sub 2 films has been studied by positron annihilation and cathodoluminescence. It was found that S-parameter in the films decreased after implantation, indicating the suppression of positronium formation. The luminescence appeared with the recovery of the S-parameter after 600 deg. C annealing. The intensity reached a maximum at 900 deg. C annealing whereas the S-parameter did not change significantly. It seems that most damages recover at 600 deg. C and thereafter Er ions transform to an optically active state at 900 deg. C.

  10. Spin polarization, orbital occupation and band gap opening in vanadium dioxide: The effect of screened Hartree-Fock exchange

    KAUST Repository

    Wang, Hao

    2014-07-01

    The metal-insulator transition of VO2 so far has evaded an accurate description by density functional theory. The screened hybrid functional of Heyd, Scuseria and Ernzerhof leads to reasonable solutions for both the low-temperature monoclinic and high-temperature rutile phases only if spin polarization is excluded from the calculations. We explore whether a satisfactory agreement with experiment can be achieved by tuning the fraction of Hartree Fock exchange (α) in the density functional. It is found that two branches of locally stable solutions exist for the rutile phase for 12.5%≤α≤20%. One is metallic and has the correct stability as compared to the monoclinic phase, the other is insulating with lower energy than the metallic branch. We discuss these observations based on the V 3d orbital occupations and conclude that α=10% is the best possible choice for spin-polarized VO2 calculations. © 2014 Elsevier B.V. All rights reserved.

  11. Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

    International Nuclear Information System (INIS)

    Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

    1995-01-01

    Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

  12. Spin-polarized transport in manganite-based magnetic nano structures

    International Nuclear Information System (INIS)

    Granada, Mara

    2007-01-01

    Giant magnetoresistance (G M R) and tunnel magnetoresistance are spin polarized transport phenomena which are observed in magnetic multilayers.They consist in a large variation of the electrical resistivity of the system depending on whether the magnetizations of the magnetic layers are aligned parallel or anti-parallel to each other. In order to be able to align the magnetic layers by means of an external magnetic field, they must not be strongly ferromagnetically coupled.The extrinsic magnetoresistance effects in magnetic multilayers, either G M R in the case of a metallic spacer, or T M R in the case of an insulating spacer, are observed at low magnetic fields, which makes these phenomena interesting for technological applications.We studied the possibility of using the ferromagnetic manganite La 0 ,75Sr 0 ,25MnO 3 (L S M O) in magneto resistive devices, with different materials as a spacer layer.As the main result of this work, we report G M R and T M R measurements in L S M O/LaNiO 3 /L S M O and L S M O/CaMnO 3 /L S M O tri layers, respectively, observed for the first time in these systems.This work included the deposition of films and multilayers by sputtering, the structural characterization of the samples and the study of their magnetic and electric transport properties.Our main interest was the study of G M R in L S M O/LaNiO 3 /L S M O tri layers.It was necessary to firstly characterize the magnetic coupling of L S M O layers through the L N O spacer. After that, we performed electric transport measurements with the current in the plane of the samples.We measured a G M R contribution of ∼ 0,55 % at T = 83 K.We designed a procedure for patterning the samples by e-beam lithography for electric transport measurements with the current perpendicular to the plane. We also performed the study of L S M O/CaMnO 3 /L S M O tri layers with an insulating spacer.We studied the magnetic coupling, as in the previous case.Then we fabricated a tunnel junction for

  13. Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

    Science.gov (United States)

    Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

    2017-04-01

    A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

  14. Electron spin polarization in realistic trajectories around the magnetic node of two counter-propagating, circularly polarized, ultra-intense lasers

    Science.gov (United States)

    Del Sorbo, D.; Seipt, D.; Thomas, A. G. R.; Ridgers, C. P.

    2018-06-01

    It has recently been suggested that two counter-propagating, circularly polarized, ultra-intense lasers can induce a strong electron spin polarization at the magnetic node of the electromagnetic field that they setup (Del Sorbo et al 2017 Phys. Rev. A 96 043407). We confirm these results by considering a more sophisticated description that integrates over realistic trajectories. The electron dynamics is weakly affected by the variation of power radiated due to the spin polarization. The degree of spin polarization differs by approximately 5% if considering electrons initially at rest or already in a circular orbit. The instability of trajectories at the magnetic node induces a spin precession associated with the electron migration that establishes an upper temporal limit to the polarization of the electron population of about one laser period.

  15. The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

    Science.gov (United States)

    Laghaei, M.; Heidari Semiromi, E.

    2018-03-01

    Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

  16. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  17. Development of a LabVIEW-based surface with innovative controls for the control system of the spin-polarized electron test source Photo-CATCH

    Energy Technology Data Exchange (ETDEWEB)

    Roesch, Heidi Ayse; Enders, Joachim; Espig, Martin; Fritzsche, Yuliya; Wagner, Markus [TU Darmstadt, Institut fuer Kernphysik (Germany)

    2016-07-01

    Operations of the spin-polarized electron source of the S-DALINAC will be supported by a photo-cathode activation, test and cleaning system, Photo-CATCH. Besides cathode-performance studies, this teststand produces spin-polarized electron bunches from a GaAs photo-cathode that are then transported, manipulated, and characterized by devices in a low-energy beam line. To set and monitor the various components of the beamline, a control system was developed, based on the EPICS framework. As interfaces, LabVIEW was used in combination with a gamepad as a controlling device.

  18. Fully Valley/spin polarized current and Fano factor through the Graphene/ferromagnetic silicene/Graphene junction

    Energy Technology Data Exchange (ETDEWEB)

    Rashidian, Zeinab; Rezaeipour, Saeid [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Hajati, Yaser [Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Lorestaniweiss, Zeinab, E-mail: rashidian1983z@gmail.com [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Ueda, Akiko [Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba (Japan)

    2017-02-15

    In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.

  19. Valley- and spin-polarized oscillatory magneto-optical absorption in monolayer MoS2 quantum rings

    Science.gov (United States)

    Oliveira, D.; Villegas-Lelovsky, L.; Soler, M. A. G.; Qu, Fanyao

    2018-03-01

    Besides optical valley selectivity, strong spin-orbit interaction along with Berry curvature effects also leads to unconventional valley- and spin-polarized Landau levels in monolayer transition metal dichalcogenides (TMDCs) under a perpendicular magnetic field. We find that these unique properties are inherited to the magneto-optical absorption spectrum of the TMDC quantum rings (QRs). In addition, it is robust against variation of the magnetic flux and of the QR geometry. In stark contrast to the monolayer bulk material, the MoS2 QRs manifest themselves in both the optical valley selectivity and unprecedented size tunability of the frequency of the light absorbed. We also find that when the magnetic field setup is changed, the phase transition from Aharonov-Bohm (AB) quantum interference to aperiodic oscillation of magneto-optical absorption spectrum takes place. The exciton spectrum in a realistic finite thickness MoS2 QR is also discussed.

  20. Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Poulopoulos, P., E-mail: poulop@upatras.gr [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Materials Science Department, University of Patras, 26504 Patras (Greece); Goschew, A.; Straub, A.; Fumagalli, P. [Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Kapaklis, V.; Wolff, M. [Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden); Delimitis, A. [Chemical Process and Energy Resources Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece); Wilhelm, F.; Rogalev, A. [European Synchrotron Radiation Facility (ESRF), B.P.220, 38043 Grenoble (France); Pappas, S. D. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden)

    2014-03-17

    Ni/EuS multilayers with excellent multilayer sequencing are deposited via e-beam evaporation on the native oxide of Si(100) wafers at 4 × 10{sup −9} millibars. The samples have very small surface and interface roughness and show sharp interfaces. Ni layers are nanocrystalline 4–8 nm thick and EuS layers are 2–4 nm thick and are either amorphous or nanocrystalline. Unlike for Co/EuS multilayers, all Eu ions are in divalent (ferromagnetic) state. We show a direct antiferromagnetic coupling between EuS and Ni layers. At room temperature, the EuS layers are spin-polarized due to the proximity of Ni. Therefore, Ni/EuS is a candidate for room-temperature spintronics applications.

  1. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  2. Density-Imbalance Stability Diagram of the νT = 1 Bilayer Electron System at Full Spin Polarization

    International Nuclear Information System (INIS)

    Takase, Keiko; Muraki, Koji

    2011-01-01

    We investigate the evolution of the total Landau level filling factor ν T = 1 bilayer quantum Hall (QH) state versus density imbalance at full spin polarization under a tilted magnetic field. When the system is well below the compressible-incompressible transition point at the balanced density, the ν T = 1 QH state extends widely versus density imbalance, continuously merging into the single-layer ν = 1 QH state. In the vicinity of the transition point, the ν T = 1 QH state is only weakly developed at small imbalance but increases in strength toward ν T = 1/3 + 2/3, where it is clearly separated from the single-layer ν = 1 QH state. These results suggest that the system at the imbalance of Δν = 1/3 undergoes a transition from the correlated ν T = 1 QH state to single-layer fractional QH states with increasing density.

  3. A hemispherical photoelectron spectrometer with 2-dimensional delay-line detector and integrated spin-polarization analysis

    International Nuclear Information System (INIS)

    Plucinski, L.; Oelsner, A.; Matthes, F.; Schneider, C.M.

    2010-01-01

    Photoelectron spectrometers usually allow detection of either spin-resolved energy-distribution curves (EDCs) at single emission angle, or 2D angle-vs.-energy images without spin-resolution. We have combined the two detection schemes into one spectrometer system which permits simultaneous detection of a 1D spin-resolved EDC and a 2D angular map. A state-of-the-art hemispherical analyzer is used as an energy filter. Its original scintillator detector has been replaced by a delay-line-detector (DLD), and part of the electron beam is allowed to pass through to reach the spin-polarized low energy electron diffraction (SPLEED) spin-detector mounted subsequently. The electron-optics between DLD and SPLEED contains a 90 o deflector to feature simultaneous detection of in-plane and out-of-plane spin components. These electron-optics have been optimized for high transmission to reduce acquisition times in the spin-resolved mode.

  4. Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

    Science.gov (United States)

    Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

    2018-02-01

    Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

  5. Spin Polarization Oscillations without Spin Precession: Spin-Orbit Entangled Resonances in Quasi-One-Dimensional Spin Transport

    Directory of Open Access Journals (Sweden)

    D. H. Berman

    2014-03-01

    Full Text Available Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance. A fully quantum-mechanical theory for transport using multiple subbands of the one-dimensional system provides the dependence of the spin density on the applied magnetic field and channel width and position along the channel. We show how the spatially nonoscillating part of the spin density vanishes when the Zeeman energy matches the subband energy splittings. The resonance phenomenon persists in the presence of disorder.

  6. Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator

    International Nuclear Information System (INIS)

    Sukhanov, A. A.; Sablikov, V. A.

    2013-01-01

    The spin filtering of electrons tunneling from the edge states of a two-dimensional topological insulator into a normal conductor under a magnetic field (external or induced due to proximity to a magnetic insulator) is studied. Calculations are performed for a tunnel contact of finite length between the topological insulator and an electronic multimode quantum strip. It is shown that the flow of tunneling electrons is split in the strip, so that spin-polarized currents arise in its left and right branches. These currents can be effectively controlled by the contact voltage and the chemical potential of the system. The presence of a magnetic field, which splits the spin subbands of the electron spectrum in the strip, gives rise to switching of the spin current between the strip branches

  7. Signatures of field induced spin polarization of neutron star matter in seismic vibrations of paramagnetic neutron star

    International Nuclear Information System (INIS)

    Bastrukov, S I; Yang, J; Podgainy, D V; Weber, F

    2003-01-01

    A macroscopic model of the dissipative magneto-elastic dynamics of viscous spin polarized nuclear matter is discussed in the context of seismic activity of a paramagnetic neutron star. The source of the magnetic field of such a star is attributed to Pauli paramagnetism of baryon matter promoted by a seed magnetic field frozen into the star in the process of gravitational collapse of a massive progenitor. Particular attention is given to the effect of shear viscosity of incompressible stellar material on the timing of non-radial torsional magneto-elastic pulsations of the star triggered by starquakes. By accentuating the fact that this kind of vibration is unique to the seismology of a paramagnetic neutron star we show that the high-frequency modes decay faster than the low-frequency modes. The obtained analytic expressions for the period and relaxation time of this mode, in which the magnetic susceptibility and viscosity enter as input parameters, are then quantified by numerical estimates for these parameters taken from early and current works on transport coefficients of dense matter. It is found that the effect of viscosity is crucial for the lifetime of magneto-torsion vibrations but it does not appreciably affect the periods of this seismic mode which fall in the realm of periods of pulsed emission of soft gamma-ray repeaters and anomalous x-ray pulsars - young super-magnetized neutron stars, radiating, according to the magnetar model, at the expense of the magnetic energy release. Finally, we present arguments that the long periodic pulsed emission of these stars in a quiescent regime of radiation can be interpreted as a manifestation of weakly damped seismic magneto-torsion vibrations exhibiting the field induced spin polarization of baryon matter

  8. Spin-polarized electron gas in Co2MSi/SrTiO3(M= Ti, V, Cr, Mn, and Fe) heterostructures

    KAUST Repository

    Nazir, S.; Schwingenschlö gl, Udo

    2016-01-01

    Spin-polarized density functional theory is used to study the TiO2 terminated interfaces between the magnetic Heusler alloys Co2Si (M = Ti, V, Cr, Mn, and Fe) and the non-polar band insulator SrTiO3. The structural relaxation at the interface turns

  9. Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

    Science.gov (United States)

    Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

    2018-01-01

    A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

  10. Inhomogeneous nuclear spin polarization induced by helicity-modulated optical excitation of fluorine-bound electron spins in ZnSe

    Science.gov (United States)

    Heisterkamp, F.; Greilich, A.; Zhukov, E. A.; Kirstein, E.; Kazimierczuk, T.; Korenev, V. L.; Yugova, I. A.; Yakovlev, D. R.; Pawlis, A.; Bayer, M.

    2015-12-01

    Optically induced nuclear spin polarization in a fluorine-doped ZnSe epilayer is studied by time-resolved Kerr rotation using resonant excitation of donor-bound excitons. Excitation with helicity-modulated laser pulses results in a transverse nuclear spin polarization, which is detected as a change of the Larmor precession frequency of the donor-bound electron spins. The frequency shift in dependence on the transverse magnetic field exhibits a pronounced dispersion-like shape with resonances at the fields of nuclear magnetic resonance of the constituent zinc and selenium isotopes. It is studied as a function of external parameters, particularly of constant and radio frequency external magnetic fields. The width of the resonance and its shape indicate a strong spatial inhomogeneity of the nuclear spin polarization in the vicinity of a fluorine donor. A mechanism of optically induced nuclear spin polarization is suggested based on the concept of resonant nuclear spin cooling driven by the inhomogeneous Knight field of the donor-bound electron.

  11. Magnetic trapping of spin-polarized neutral atoms at its limits

    International Nuclear Information System (INIS)

    Shapiro, V.E.

    1995-01-01

    We investigated the limits of magnetic methods of trapping neutral atoms in a spot of small size and small polarization misalignment. The analysis covers various methods of trapping with static and rotating magnetic field. In particular, new rotating field methods having advantages are proposed. They differ from the recently invented 'top' type by employing a slow rotating field, resonant to the orbiting atoms, rather than much faster rotation. Also a theory of the top trap is developed. It elucidates important features of trapping lying beyond the time-averaged potential concept. General criteria on the trapping temperature as a function of size and misalignment parameters are established for various methods. (author). 8 refs., 2 figs

  12. Bounds on the maximum attainable equilibrium spin polarization of protons at high energy in HERA

    International Nuclear Information System (INIS)

    Vogt, M.

    2000-12-01

    For some years HERA has been supplying longitudinally spin polarised electron and positron (e ± ) beams to the HERMES experiment and in the future longitudinal polarisation will be supplied to the II1 and ZEUS experiments. As a result there has been a development of interest in complementing the polarised e ± beams with polarised protons. In contrast to the case of e ± where spin flip due to synchrotron radiation in the main bending dipoles leads to self polarisation owing to an up-down asymmetry in the spin flip rates (Sokolov-Ternov effect), there is no convincing self polarisation mechanism for protons at high energy. Therefore protons must be polarised almost at rest in a source and then accelerated to the working energy. At HERA, if no special measures are adopted, this means that the spins must cross several thousand ''spin-orbit resonances''. Resonance crossing can lead to loss of polarisation and at high energy such effects are potentially strong since spin precession is very pronounced in the very large magnetic fields needed to contain the proton beam in HERA-p. Moreover simple models which have been successfully used to describe spin motion at low and medium energies are no longer adequate. Instead, careful numerical spin-orbit tracking simulations are needed and a new, mathematically rigorous look at the theoretical concepts is required. This thesis describes the underlying theoretical concepts, the computational tools (SPRINT) and the results of such a study. In particular strong emphasis is put on the concept of the invariant spin field and its non-perturbative construction. The invariant spin field is then used to define the amplitude dependent spin tune and to obtain numerical non-perturbative estimates of the latter. By means of these two key concepts the nature of higher order resonances in the presence of snakes is clarified and their impact on the beam polarisation is analysed. We then go on to discuss the special aspects of the HERA-p ring

  13. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1994-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal field - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders. Some new ideas associated with these sources are also presented. (orig.)

  14. Positron sources

    International Nuclear Information System (INIS)

    Chehab, R.

    1989-01-01

    A tentative survey of positron sources is given. Physical processes on which positron generation is based are indicated and analyzed. Explanation of the general features of electromagnetic interactions and nuclear β + decay makes it possible to predict the yield and emittance for a given optical matching system between the positron source and the accelerator. Some kinds of matching systems commonly used - mainly working with solenoidal fields - are studied and the acceptance volume calculated. Such knowledge is helpful in comparing different matching systems. Since for large machines, a significant distance exists between the positron source and the experimental facility, positron emittance has to be preserved during beam transfer over large distances and methods used for that purpose are indicated. Comparison of existing positron sources leads to extrapolation to sources for future linear colliders

  15. Atomic collisions involving pulsed positrons

    DEFF Research Database (Denmark)

    Merrison, J. P.; Bluhme, H.; Field, D.

    2000-01-01

    Conventional slow positron beams have been widely and profitably used to study atomic collisions and have been instrumental in understanding the dynamics of ionization. The next generation of positron atomic collision studies are possible with the use of charged particle traps. Not only can large...... instantaneous intensities be achieved with in-beam accumulation, but more importantly many orders of magnitude improvement in energy and spatial resolution can be achieved using positron cooling. Atomic collisions can be studied on a new energy scale with unprecedented precion and control. The use...

  16. Design and optimization of a modular setup for measurements of three-dimensional spin polarization with ultrafast pulsed sources.

    Science.gov (United States)

    Pincelli, T; Petrov, V N; Brajnik, G; Ciprian, R; Lollobrigida, V; Torelli, P; Krizmancic, D; Salvador, F; De Luisa, A; Sergo, R; Gubertini, A; Cautero, G; Carrato, S; Rossi, G; Panaccione, G

    2016-03-01

    ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction/AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps).

  17. Photoemission of Bi_{2}Se_{3} with Circularly Polarized Light: Probe of Spin Polarization or Means for Spin Manipulation?

    Directory of Open Access Journals (Sweden)

    J. Sánchez-Barriga

    2014-03-01

    Full Text Available Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy. We solve this puzzle and show that vacuum ultraviolet photons (50–70 eV with linear or circular polarization indeed probe the initial-state spin texture of Bi_{2}Se_{3} while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.

  18. Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

    Science.gov (United States)

    Kar, Uddipta; Panda, J; Nath, T K

    2018-06-01

    The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

  19. Spin polarized electronic states and spin textures at the surface of oxygen-deficient SrTiO3

    Science.gov (United States)

    Jeschke, Harald O.; Altmeyer, Michaela; Rozenberg, Marcelo; Gabay, Marc; Valenti, Roser

    We investigate the electronic structure and spin texture at the (001) surface of SrTiO3 in the presence of oxygen vacancies by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic non-magnetic DFT calculations exhibit Rashba-like spin winding with a characteristic energy scale ~ 10 meV. However, when surface magnetism on the Ti ions is included, bands become spin-split with an energy difference ~ 100 meV at the Γ point. This energy scale is comparable to the observations in SARPES experiments performed on the two-dimensional electronic states confined near the (001) surface of SrTiO3. We find the spin polarized state to be the ground state of the system, and while magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. We gratefully acknowledge financial support from the Deutsche Forschungsgemeinschaft through grants SFB/TR 49 and FOR 1346.

  20. Design and optimization of a modular setup for measurements of three-dimensional spin polarization with ultrafast pulsed sources

    International Nuclear Information System (INIS)

    Pincelli, T.; Rossi, G.; Petrov, V. N.; Brajnik, G.; Carrato, S.; Ciprian, R.; Torelli, P.; Krizmancic, D.; Salvador, F.; De Luisa, A.; Panaccione, G.; Lollobrigida, V.; Sergo, R.; Gubertini, A.; Cautero, G.

    2016-01-01

    ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction/AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps).

  1. Design and optimization of a modular setup for measurements of three-dimensional spin polarization with ultrafast pulsed sources

    Science.gov (United States)

    Pincelli, T.; Petrov, V. N.; Brajnik, G.; Ciprian, R.; Lollobrigida, V.; Torelli, P.; Krizmancic, D.; Salvador, F.; De Luisa, A.; Sergo, R.; Gubertini, A.; Cautero, G.; Carrato, S.; Rossi, G.; Panaccione, G.

    2016-03-01

    ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction/AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps).

  2. Design and optimization of a modular setup for measurements of three-dimensional spin polarization with ultrafast pulsed sources

    Energy Technology Data Exchange (ETDEWEB)

    Pincelli, T., E-mail: pincelli@iom.cnr.it; Rossi, G. [Dipartimento di Fisica, Università degli studi di Milano, Via Celoria 16, 20133 Milano (Italy); Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, 34149 Trieste (Italy); Petrov, V. N. [Saint Petersburg State Polytechnical University, Politechnicheskaya Street 29, 195251 Saint Petersburg (Russian Federation); Brajnik, G.; Carrato, S. [Università degli Studi di Trieste, Piazzale Europa 1, 34127 Trieste (Italy); Ciprian, R.; Torelli, P.; Krizmancic, D.; Salvador, F.; De Luisa, A.; Panaccione, G. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, 34149 Trieste (Italy); Lollobrigida, V. [Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Sergo, R.; Gubertini, A.; Cautero, G. [Sincrotrone Trieste S.C.p.A, Strada Statale 14-km 163.5 in AREA Science Park, Basovizza, 34149 Trieste (Italy)

    2016-03-15

    ULTRASPIN is an apparatus devoted to the measurement of the spin polarization (SP) of electrons ejected from solid surfaces in a UHV environment. It is designed to exploit ultrafast light sources (free electron laser or laser high harmonic generation) and to perform (photo)electron spin analysis by an arrangement of Mott scattering polarimeters that measure the full SP vector. The system consists of two interconnected UHV vessels: one for surface science sample cleaning treatments, e-beam deposition of ultrathin films, and low energy electron diffraction/AES characterization. The sample environment in the polarimeter allows for cryogenic cooling and in-operando application of electric and magnetic fields. The photoelectrons are collected by an electrostatic accelerator and transport lens that form a periaxial beam that is subsequently directed by a Y-shaped electrostatic deflector to either one of the two orthogonal Mott polarimeters. The apparatus has been designed to operate in the extreme conditions of ultraintense single-X-ray pulses as originated by free electron lasers (up to 1 kHz), but it allows also for the single electron counting mode suitable when using statistical sources such as synchrotron radiation, cw-laser, or e-gun beams (up to 150 kcps).

  3. Regular and irregular dynamics of spin-polarized wavepackets in a mesoscopic quantum dot at the edge of topological insulator

    Energy Technology Data Exchange (ETDEWEB)

    Khomitsky, D. V., E-mail: khomitsky@phys.unn.ru; Chubanov, A. A.; Konakov, A. A. [Lobachevsky National Research State University of Nizhny Novgorod, Department of Physics (Russian Federation)

    2016-12-15

    The dynamics of Dirac–Weyl spin-polarized wavepackets driven by a periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of the two-dimensional HgTe/CdTe topological insulator with Dirac–Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It is observed that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of irregular dynamics in both coordinate and spin channels. The border between the regular and irregular regimes determined by the strength and frequency of the driving field is found analytically within the quasiclassical approach by means of the Ince–Strutt diagram for the Mathieu equation, and is supported by full quantum-mechanical simulations of the driven dynamics. The investigation of quasienergy spectrum by Floquet approach reveals the presence of non-Poissonian level statistics, which indicates the possibility of chaotic quantum dynamics and corresponds to the areas of parameters for irregular regimes within the quasiclassical approach. We find that the influence of weak disorder leads to partial suppression of the dynamical chaos. Our findings are of interest both for progress in the fundamental field of quantum chaotic dynamics and for further experimental and technological applications of spindependent phenomena in nanostructures based on topological insulators.

  4. Partially spin-polarized Josephson tunneling between non-centrosymmetric superconductors like CePt3Si

    International Nuclear Information System (INIS)

    Mandal, S.S.; Mukherjee, S.P.

    2007-01-01

    Full text: The recent discovery of the superconductivity in the heavy fermionic compound CePt 3 Si have attracted much of the attention of the physics community. The presence of strong Rashba kind of spin-orbit coupling in them split the otherwise degenerate electronic band into two nondegenerate bands. This peculiarity in the band structure gives rise to complicated kind of order parameter whose exact nature is unknown till date. Traditionally Josephson junctions in superconductors draw interest both scientifically and its applicability in making devices. It has been used in several cases as a probe to the order parameter symmetry of the superconductor. It has also been studied in unconventional superconductors like spin-singlet cuprate and spin-triplet Sr 2 RuO 4 superconductors. However no Josephson junction between nonmagnetic superconductors is known to generate spin-polarized current. The purpose of this work is to theoretically show that the direction dependent tunneling matrix element across the junction between two recently discovered non-centrosymmetric superconductors like CePt 3 Si, leads to tunneling of both spin-singlet and spin-triplet Cooper pairs. As a consequence, nonvanishing spin-Josephson current is viable along with the usual charge-Josephson current. This novel spin-Josephson current depends on the relative angle xi between the axes of non-centrosymmetry {n} L and that {n} R in the left and right side of the junction respectively. This angular dependence may be used to make Josephson spin switch. (authors)

  5. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

    International Nuclear Information System (INIS)

    Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

    2015-01-01

    We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

  6. Improved Electron Yield and Spin-Polarization from III-V Photocathodes Via Bias Enhanced Carrier Drift

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.; Bierman, John; Brachmann, Axel; Clendenin, James E.; Garwin, Edward; Kirby, Robert; Luh, Dah-An

    2005-01-01

    Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile. Preliminary measurements have been carried out on bulk and thin film GaAs. As expected, the yield change far from the bandgap is quite large for bulk material. The bias is applied to the bottom (non-activated) side of the cathode so that the accelerating potential as measured with respect to the ground potential chamber walls is unchanged for different front-to-back cathode bias values. The size of the bias to cause an appreciable effect is rather small reflecting the low drift kinetic energy in the zero bias case

  7. Measurement of transverse emittance at the source of spin-polarized electrons at the S-DALINAC

    Energy Technology Data Exchange (ETDEWEB)

    Eckardt, Christian; Barday, Roman; Bonnes, Uwe; Eichhorn, Ralf; Enders, Joachim; Hessler, Christoph; Patalakha, Oleksandr; Platz, Markus; Poltoratska, Yuliya; Rick, Wolfgang [Institut fuer Kernphysik, TU Darmstadt (Germany); Ackermann, Wolfgang; Mueller, Wolfgang F.O.; Steiner, Bastian; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, TU Darmstadt (Germany)

    2008-07-01

    A new injector concept for 100 keV spin-polarized electrons (SPIN) at the S-DALINAC has been developed. The transverse emittance was measured for beam characterization. The emittance is a quantity concerning the quality of the beam, describing the phase space area. Determination of the emittance requires measurement of the beam profile and knowledge of the focal length of a beam focussing device. A wire scanner unit consisting of two 50 {mu}m diameter tungsten wires is used for the beam-profile measurement. Data analysis is performed by fitting a gaussian model distribution to estimate the 1{sigma} beam radius. Each determined beam width is correlated to the corresponding focal length of a magnetic lens, and a parabola fit is applied to calculate the parameters of the {sigma}-matrix. The square root of the determinant of the {sigma}-matrix defines the emittance. The results of the calculation are presented and the emittance is compared to theoretical estimates.

  8. Spin-polarized electron gas in Co2MSi/SrTiO3(M= Ti, V, Cr, Mn, and Fe) heterostructures

    KAUST Repository

    Nazir, S.

    2016-06-08

    Spin-polarized density functional theory is used to study the TiO2 terminated interfaces between the magnetic Heusler alloys Co2Si (M = Ti, V, Cr, Mn, and Fe) and the non-polar band insulator SrTiO3. The structural relaxation at the interface turns out to depend systematically on the lattice mis- match. Charge transfer from the Heusler alloys (mainly the M 3d orbitals) to the Ti dxy orbitals of the TiO2 interface layer is found to gradually grow from M = Ti to Fe, resulting in an electron gas with increasing density of spin-polarized charge carriers. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  9. Mechanism of ({sup 14}N, {sup 12}B) reactions at intermediate energy leading to large spin-polarization of {sup 12}B

    Energy Technology Data Exchange (ETDEWEB)

    Mitsuoka, Shin-ichi [Osaka Univ., Ibaraki (Japan). Research Center for Nuclear Physics; Shimoda, Tadashi; Miyatake, Hiroari [and others

    1996-05-01

    To study mechanisms of the ({sup 14}N, {sup 12}B) reactions at intermediate energies, double differential cross section and nuclear spin-polarization of the {sup 12}B projectile-like fragments have been measured as a function of longitudinal momentum in the angular range of 0deg - 9deg. Large spin-polarization of the reaction products {sup 12}B has been observed in the {sup 9}Be({sup 14}N, {sup 12}B) reaction at 39.3 MeV/u. The momentum distributions at forward angles exhibit characteristic features which can not be understood by the current projectile fragmentation picture. It is shown that by assuming the existence of direct two-proton transfer process in addition to the fragmentation process, both the cross section and polarization of {sup 12}B fragments are successfully explained. The target and incident energy dependence of the momentum distribution are also explained reasonably. (author)

  10. Magnetism in grain-boundary phase of a NdFeB sintered magnet studied by spin-polarized scanning electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kohashi, Teruo, E-mail: teruo.kohashi.fc@hitachi.com; Motai, Kumi [Central Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395 (Japan); Nishiuchi, Takeshi; Hirosawa, Satoshi [Magnetic Materials Research Laboratory, Hitachi Metals Ltd., Osaka 618-0013 (Japan)

    2014-06-09

    The magnetism in the grain-boundary phase of a NdFeB sintered magnet was measured by spin-polarized scanning electron microscopy (spin SEM). A sample magnet was fractured in the ultra-high-vacuum chamber to avoid oxidation, and its magnetizations in the exposed grain-boundary phase on the fracture surface were evaluated through the spin polarization of secondary electrons. Spin-SEM images were taken as the fracture surface was milled gradually by argon ions, and the magnetization in the grain-boundary phase was quantitatively obtained separately from that of the Nd{sub 2}Fe{sub 14}B phase. The obtained magnetization shows that the grain-boundary phase of this magnet has substantial magnetization, which was confirmed to be ferromagnetic.

  11. Perfect tuning of spin-polarization in a ring-shaped multiple-quantum-dot nanostructure in the presence of Rashba spin–orbit coupling

    Energy Technology Data Exchange (ETDEWEB)

    Eslami, L., E-mail: Leslami@iust.ac.ir; Chaghari, Z.; Faizabadi, E.

    2013-09-02

    Spin-dependent electronic transport through an open multiple-quantum-dot ring threaded by a magnetic flux is theoretically investigated by using the single particle Green's function method. By introducing local Rashba spin–orbit interaction on an individual quantum dot and local magnetic moments on two of other quantum dots, we calculate the spin-polarization in the output lead. We find the spin-polarization can be tuned by manipulating magnetic moments, adjusting magnetic flux and setting the Rashba spin–orbit strength. It is also shown the system can operate as an efficient spin-inverter when the structure is adjusted properly. The analysis can be utilized in designing optimized nanodevices.

  12. Perturbation of nuclear spin polarizations in solid state NMR of nitroxide-doped samples by magic-angle spinning without microwaves

    International Nuclear Information System (INIS)

    Thurber, Kent R.; Tycko, Robert

    2014-01-01

    We report solid state 13 C and 1 H nuclear magnetic resonance (NMR) experiments with magic-angle spinning (MAS) on frozen solutions containing nitroxide-based paramagnetic dopants that indicate significant perturbations of nuclear spin polarizations without microwave irradiation. At temperatures near 25 K, 1 H and cross-polarized 13 C NMR signals from 15 N, 13 C-labeled L-alanine in trinitroxide-doped glycerol/water are reduced by factors as large as six compared to signals from samples without nitroxide doping. Without MAS or at temperatures near 100 K, differences between signals with and without nitroxide doping are much smaller. We attribute most of the reduction of NMR signals under MAS near 25 K to nuclear spin depolarization through the cross-effect dynamic nuclear polarization mechanism, in which three-spin flips drive nuclear polarizations toward equilibrium with spin polarization differences between electron pairs. When T 1e is sufficiently long relative to the MAS rotation period, the distribution of electron spin polarization across the nitroxide electron paramagnetic resonance lineshape can be very different from the corresponding distribution in a static sample at thermal equilibrium, leading to the observed effects. We describe three-spin and 3000-spin calculations that qualitatively reproduce the experimental observations

  13. Perturbation of nuclear spin polarizations in solid state NMR of nitroxide-doped samples by magic-angle spinning without microwaves.

    Science.gov (United States)

    Thurber, Kent R; Tycko, Robert

    2014-05-14

    We report solid state (13)C and (1)H nuclear magnetic resonance (NMR) experiments with magic-angle spinning (MAS) on frozen solutions containing nitroxide-based paramagnetic dopants that indicate significant perturbations of nuclear spin polarizations without microwave irradiation. At temperatures near 25 K, (1)H and cross-polarized (13)C NMR signals from (15)N,(13)C-labeled L-alanine in trinitroxide-doped glycerol/water are reduced by factors as large as six compared to signals from samples without nitroxide doping. Without MAS or at temperatures near 100 K, differences between signals with and without nitroxide doping are much smaller. We attribute most of the reduction of NMR signals under MAS near 25 K to nuclear spin depolarization through the cross-effect dynamic nuclear polarization mechanism, in which three-spin flips drive nuclear polarizations toward equilibrium with spin polarization differences between electron pairs. When T1e is sufficiently long relative to the MAS rotation period, the distribution of electron spin polarization across the nitroxide electron paramagnetic resonance lineshape can be very different from the corresponding distribution in a static sample at thermal equilibrium, leading to the observed effects. We describe three-spin and 3000-spin calculations that qualitatively reproduce the experimental observations.

  14. Perturbation of nuclear spin polarizations in solid state NMR of nitroxide-doped samples by magic-angle spinning without microwaves

    Energy Technology Data Exchange (ETDEWEB)

    Thurber, Kent R., E-mail: thurberk@niddk.nih.gov; Tycko, Robert [Laboratory of Chemical Physics, National Institute of Diabetes and Digestive and Kidney Diseases, National Institutes of Health, Bethesda, Maryland 20892-0520 (United States)

    2014-05-14

    We report solid state {sup 13}C and {sup 1}H nuclear magnetic resonance (NMR) experiments with magic-angle spinning (MAS) on frozen solutions containing nitroxide-based paramagnetic dopants that indicate significant perturbations of nuclear spin polarizations without microwave irradiation. At temperatures near 25 K, {sup 1}H and cross-polarized {sup 13}C NMR signals from {sup 15}N,{sup 13}C-labeled L-alanine in trinitroxide-doped glycerol/water are reduced by factors as large as six compared to signals from samples without nitroxide doping. Without MAS or at temperatures near 100 K, differences between signals with and without nitroxide doping are much smaller. We attribute most of the reduction of NMR signals under MAS near 25 K to nuclear spin depolarization through the cross-effect dynamic nuclear polarization mechanism, in which three-spin flips drive nuclear polarizations toward equilibrium with spin polarization differences between electron pairs. When T{sub 1e} is sufficiently long relative to the MAS rotation period, the distribution of electron spin polarization across the nitroxide electron paramagnetic resonance lineshape can be very different from the corresponding distribution in a static sample at thermal equilibrium, leading to the observed effects. We describe three-spin and 3000-spin calculations that qualitatively reproduce the experimental observations.

  15. Modeling all-electrical detection of the inverse Edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure

    Science.gov (United States)

    Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    2018-04-01

    The spin-momentum locking of the surface states in a three-dimensional topological insulator (TI) allows a charge current on the surface of the TI induced by an applied spin current onto the surface, which is known as the inverse Edelstein effect (IEE), that could be achieved either by injecting pure spin current by spin-pumping from a ferromagnetic metal (FM) layer or by injecting spin-polarized charge current by direct tunneling of electrons from the FM to the TI. Here, we present a theory of the observed IEE effect in a TI-FM heterostructure for the spin-polarized tunneling experiments. If an electrical current is passed from the FM to the surface of the TI, because of density-of-states polarization of the FM, an effective imbalance of spin-polarized electrons occurs on the surface of the TI. Due to the spin-momentum helical locking of the surface states in the TI, a difference of transverse charge accumulation appears on the TI surface in a direction orthogonal to the direction of the magnetization of the FM, which is measured as a voltage difference. Here, we derive the two-dimensional transport equations of electrons on the surface of a diffusive TI, coupled to a FM, starting from the quantum kinetic equation, and analytically solve the equations for a rectangular geometry to calculate the voltage difference.

  16. Nanometer cavities studied by positron annihilation

    International Nuclear Information System (INIS)

    Mogensen, O.E.

    1992-01-01

    Positronium (Ps) is trapped in cavities in insulating solids, and the lifetime of ortho Ps is determined by the size of the cavity. The information on the properties of the cavities obtained by use of the standard slow positron beam and the 'normal' positron annihilation techniques is compared for several selected cases. (author)

  17. Tuning Fermi level of Cr{sub 2}CoZ (Z=Al and Si) inverse Heusler alloys via Fe-doping for maximum spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mukhtiyar [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Saini, Hardev S. [Department of Physics, Panjab University, Chandigarh-160014 (India); Thakur, Jyoti [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Reshak, Ali H. [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Kashyap, Manish K., E-mail: manishdft@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India)

    2014-12-15

    We report full potential treatment of electronic and magnetic properties of Cr{sub 2−x}Fe{sub x}CoZ (Z=Al, Si) Heusler alloys where x=0.0, 0.25, 0.5, 0.75 and 1.0, based on density functional theory (DFT). Both parent alloys (Cr{sub 2}CoAl and Cr{sub 2}CoSi) are not half-metallic frromagnets. The gradual replacement of one Cr sublattice with Fe induces the half-metallicity in these systems, resulting maximum spin polarization. The half-metallicity starts to appear in Cr{sub 2−x}Fe{sub x}CoAl and Cr{sub 2−x}Fe{sub x}CoSi with x=0.50 and x=0.25, respectively, and the values of minority-spin gap and half-metallic gap or spin-flip gap increase with further increase of x. These gaps are found to be maximum for x=1.0 for both cases. An excellent agreement between the structural properties of CoFeCrAl with available experimental study is obtained. The Fermi level tuning by Fe-doping makes these alloys highly spin polarized and thus these can be used as promising candidates for spin valves and magnetic tunnelling junction applications. - Highlights: • Tuning of E{sub F} in Cr{sub 2}CoZ (Z=Al, Si) has been demonstrated via Fe doping. • Effect of Fe doping on half-metallicity and magnetism have been discussed. • The new alloys have a potential of being used as spin polarized electrodes.

  18. Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

    Science.gov (United States)

    Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

    2018-05-01

    We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

  19. Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

    Science.gov (United States)

    Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

    2018-04-24

    Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

  20. A 1.5--4 Kelvin detachable cold-sample transfer system: Application to inertially confined fusion with spin-polarized hydrogens fuels

    International Nuclear Information System (INIS)

    Alexander, N.; Barden, J.; Fan, Q.; Honig, A.

    1990-01-01

    A compact cold-transfer apparatus for engaging and retrieving samples at liquid helium temperatures (1.5--4K), maintaining the samples at such temperatures for periods of hours, and subsequently inserting them in diverse apparatuses followed by disengagement, is described. The properties of several thermal radiation-insulating shrouds, necessary for very low sample temperatures, are presented. The immediate intended application is transportable target-shells containing highly spin-polarized deuterons in solid HD or D 2 for inertially confined fusion (ICF) experiments. The system is also valuable for unpolarized high-density fusion fuels, as well as for other applications which are discussed. 9 refs., 6 figs

  1. Monte Carlo study of electron relaxation in graphene with spin polarized, degenerate electron gas in presence of electron-electron scattering

    Science.gov (United States)

    Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

    2017-12-01

    The Monte Carlo simulation method is applied to study the relaxation of excited electrons in monolayer graphene. The presence of spin polarized background electrons population, with density corresponding to highly degenerate conditions is assumed. Formulas of electron-electron scattering rates, which properly account for electrons presence in two energetically degenerate, inequivalent valleys in this material are presented. The electron relaxation process can be divided into two phases: thermalization and cooling, which can be clearly distinguished when examining the standard deviation of electron energy distribution. The influence of the exchange effect in interactions between electrons with parallel spins is shown to be important only in transient conditions, especially during the thermalization phase.

  2. Development of a transmission positron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Matsuya, M., E-mail: matsuya@jeol.co.jp [JEOL Ltd., 1-2 Musashino, 3-Chome, Akishima, Tokyo 196-8558 (Japan); Jinno, S. [Department of Applied Chemistry, Chiba University, Yayoi, Inage, Chiba, Chiba 263-8552 (Japan); Ootsuka, T.; Inoue, M. [JEOL Ltd., 1-2 Musashino, 3-Chome, Akishima, Tokyo 196-8558 (Japan); Kurihara, T. [High Energy Accelerator Research Organization, Oho, Tsukuba, Ibaraki 305-0801 (Japan); Doyama, M.; Inoue, M. [Teikyo University of Science and Technology, Uenohara, Yamanashi 409-0913 (Japan); Fujinami, M. [Department of Applied Chemistry, Chiba University, Yayoi, Inage, Chiba, Chiba 263-8552 (Japan)

    2011-07-21

    A practical transmission positron microscope (TPM) JEM-1011B has been developed to survey differences in the interaction of positron and electron beams with materials, and is installed in the Slow Positron Facility of High Energy Accelerator Research Organization (KEK). The TPM can share positron and electron beams, and can also be used as a transmission electron microscope (TEM). Positron transmission images up to magnification 10,000x (resolution: 50 nm) and positron diffraction patterns up to 044 family were successfully obtained by the TPM comparing them with those of electrons. The differences in material transmittances for both beams have been measured, and can be explained by the calculated results of the Monte Carlo simulation code PENELOPE-2008.

  3. Development, construction and characterization of a variable repetitive spin-polarized electron gun with an inverted-geometry insulator

    International Nuclear Information System (INIS)

    Espig, Martin

    2016-02-01

    Within the scope of this thesis a pulsed source of spin polarized electrons Photo-CATCH was designed, constructed, characterized and has been put into operation. This source is based on the photoemission of spin-polarized electrons from GaAs-photocathodes. Both the design of the electron gun, consisting of an ultra-high vacuum chamber and an electrode with Pierce geometry, as well as the properties of the electron beam have been simulated with CST Studio. Results were a maximum electric field of (0.064±0.001) MV/m/kV on the electrode surface and a beam emittance as a function of the radius of the laser spot on the photocathode of element of _n_,_x=(1.7478(4).10"-"4.(r)/(μm)+2.8(18).10"-"5) mm mrad at a beam current of 100 μA. Currently Photo-CATCH provides electron beams with an energy of 60 keV, which can be expanded up to 100 keV by upgrading the high-voltage power supply. The electron gun has an inverted-geometry insulator to ensure a compact design of the ultra-high vacuum chamber and a maximum person- and machine-safety from sparkovers. Since the properties of the laser light directly affect the properties of the generated electron beam a pulsed semiconductor laser system has been specially developed and built for Photo-CATCH. This is characterized by a high variability of its operating parameters, in particular its wavelength and repetition rate, in order to fulfill the broad variety of requirements of various nuclear physics experiments. By selecting the wavelength of the used laser diode highly polarized or high-current electron beams can be generated from GaAs-photocathodes. The time profile of the laser has direct influence to the longitudinal profile of the electron bunch. Through the radiofrequency modulation of the pumping current of the impedance-matched semiconductor laser system, consisting of a DC power source and an electrical pulse generator with 881 ps broad pump pulses, Lorentz shaped laser pulses with a minimum FWHM of (43.8±1.2) ps at a

  4. Spin-polarization and spin-flip in a triple-quantum-dot ring by using tunable lateral bias voltage and Rashba spin-orbit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Molavi, Mohamad, E-mail: Mo_molavi@yahoo.com [Faculty of Physics, Kharazmi University, Tehran (Iran, Islamic Republic of); Faizabadi, Edris, E-mail: Edris@iust.ac.ir [School of Physics, Iran University of Science and Technology, 16846 Tehran (Iran, Islamic Republic of)

    2017-04-15

    By using the Green's function formalism, we investigate the effects of single particle energy levels of a quantum dot on the spin-dependent transmission properties through a triple-quantum-dot ring structure. In this structure, one of the quantum dots has been regarded to be non-magnetic and the Rashba spin-orbit interaction is imposed locally on this dot while the two others can be magnetic. The on-site energy of dots, manipulates the interference of the electron spinors that are transmitted to output leads. Our results show that the effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots, which is applicable by a controllable lateral bias voltage externally. Besides, by tuning the parameters such as Rashba spin-orbit interaction, and on-site energy of dots and magnetic flux inside the ring, the structure can be indicated the spin-flip effect and behave as a full spin polarizer or splitter. - Highlights: • The effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots. • In the situation that the QDs have non-zero on-site energies, the system can demonstrate the full spin-polarization. • By tuning the Rashba spin-orbit strength and magnetic flux encountered by the ring the system operates as a Stern-Gerlach apparatus.

  5. Energy spectrum, the spin polarization, and the optical selection rules of the Kronig-Penney superlattice model with spin-orbit coupling

    Science.gov (United States)

    Li, Rui

    2018-02-01

    The Kronig-Penney model, an exactly solvable one-dimensional model of crystal in solid physics, shows how the allowed and forbidden bands are formed in solids. In this paper, we study this model in the presence of both strong spin-orbit coupling and the Zeeman field. We analytically obtain four transcendental equations that represent an implicit relation between the energy and the Bloch wave vector. Solving these four transcendental equations, we obtain the spin-orbital bands exactly. In addition to the usual band gap opened at the boundary of the Brillouin zone, a much larger spin-orbital band gap is also opened at some special sites inside the Brillouin zone. The x component of the spin-polarization vector is an even function of the Bloch wave vector, while the z component of the spin-polarization vector is an odd function of the Bloch wave vector. At the band edges, the optical transition rates between adjacent bands are nonzero.

  6. Enhancement of spin polarization induced by Coulomb on-site repulsion between localized pz electrons in graphene embedded with line defects.

    Science.gov (United States)

    Ren, Ji-Chang; Wang, Zhigang; Zhang, Rui-Qin; Ding, Zejun; Van Hove, Michel A

    2015-11-11

    It is well known that the effect of Coulomb on-site repulsion can significantly alter the physical properties of the systems that contain localized d and/or f electrons. However, little attention has been paid to the Coulomb on-site repulsion between localized p electrons. In this study, we demonstrated that Coulomb on-site repulsion between localized pz electrons also plays an important role in graphene embedded with line defects. It is shown that the magnetism of the system largely depends on the choice of the effective Coulomb on-site parameter Ueff. Ueff at the edges of the defect enhances the exchange splitting, which increases the magnetic moment and stabilizes a ferromagnetic state of the system. In contrast, Ueff at the center of the defect weakens the spin polarization of the system. The behavior of the magnetism is explained with the Stoner criterion and the charge accumulation at the edges of the defect. Based on the linear response approach, we estimate reasonable values of Ueff to be 2.55 eV (2.3 eV) at the center (edges) of the defects. More importantly, using a DFT+U+J method, we find that exchange interactions between localized p electrons also play an important role in the spin polarization of the system. These results imply that Coulomb on-site repulsion is necessary to describe the strong interaction between localized pz electrons of carbon related materials.

  7. Spin-polarized structural, elastic, electronic and magnetic properties of half-metallic ferromagnetism in V-doped ZnSe

    Science.gov (United States)

    Monir, M. El Amine.; Baltache, H.; Murtaza, G.; Khenata, R.; Ahmed, Waleed K.; Bouhemadou, A.; Omran, S. Bin; Seddik, T.

    2015-01-01

    Based on first principles spin-polarized density functional theory, the structural, elastic electronic and magnetic properties of Zn1-xVxSe (for x=0.25, 0.50, 0.75) in zinc blende structure have been studied. The investigation was done using the full-potential augmented plane wave method as implemented in WIEN2k code. The exchange-correlation potential was treated with the generalized gradient approximation PBE-GGA for the structural and elastic properties. Moreover, the PBE-GGA+U approximation (where U is the Hubbard correlation terms) is employed to treat the "d" electrons properly. A comparative study between the band structures, electronic structures, total and partial densities of states and local moments calculated within both GGA and GGA+U schemes is presented. The analysis of spin-polarized band structure and density of states shows the half-metallic ferromagnetic character and are also used to determine s(p)-d exchange constants N0α (conduction band) and N0β (valence band) due to Se(4p)-V(3d) hybridization. It has been clearly evidence that the magnetic moment of V is reduced from its free space change value of 3 μB and the minor atomic magnetic moment on Zn and Se are generated.

  8. Evolution with Composition of the d-Band Density of States at the Fermi Level in Highly Spin Polarized Co1-xFexS2

    Science.gov (United States)

    Kuhns, P. L.; Hoch, M. J. R.; Reyes, A. P.; Moulton, W. G.; Wang, L.; Leighton, C.

    2006-04-01

    Highly spin polarized (SP) and half-metallic ferromagnetic systems are of considerable current interest and of potential importance for spintronic applications. Recent work has demonstrated that Co1-xFexS2 is a highly polarized ferromagnet (FM) where the spin polarization can be tuned by alloy composition. Using Co59 FM-NMR as a probe, we have measured the low-temperature spin relaxation in this system in magnetic fields from 0 to 1.0 T for 0≤x≤0.3. The Co59 spin-lattice relaxation rates follow a linear T dependence. Analysis of the data, using expressions for a FM system, permits information to be obtained on the d-band density of states at the Fermi level. The results are compared with independent density of states values inferred from electronic specific heat measurements and band structure calculations. It is shown that FM-NMR can be an important method for investigating highly SP systems.

  9. Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3

    Science.gov (United States)

    Das, Shekhar; Sirohi, Anshu; Kumar Gupta, Gaurav; Kamboj, Suman; Vasdev, Aastha; Gayen, Sirshendu; Guptasarma, Prasenjit; Das, Tanmoy; Sheet, Goutam

    2018-06-01

    Majority of the A2B3 -type chalcogenide systems with strong spin-orbit coupling (SOC), such as Bi2Se3,Bi2Te3 , and Sb2Te3 , etc., are topological insulators. One important exception is Sb2Se3 where a topological nontrivial phase was argued to be possible under ambient conditions, but such a phase could be detected to exist only under pressure. In this paper, we show that Sb2Se3 like Bi2Se3 displays a generation of highly spin-polarized current under mesoscopic superconducting point contacts as measured by point-contact Andreev reflection spectroscopy. In addition, we observe a large negative and anisotropic magnetoresistance of the mesoscopic metallic point contacts formed on Sb2Se3 . Our band-structure calculations confirm the trivial nature of Sb2Se3 crystals and reveal two trivial surface states one of which shows large spin splitting due to Rashba-type SOC. The observed high spin polarization and related phenomena in Sb2Se3 can be attributed to this spin splitting.

  10. Planned Positron Factory project

    International Nuclear Information System (INIS)

    Okada, Sohei

    1990-01-01

    The Japan Atomic Energy Research Institute, JAERI, has started, drafting a construction plan for the 'Positron Factory', in which intense energy-controllable monoenergetic positron beams are produced from pair-production reactions caused by high-energy electrons from a linac. The JAERI organized a planning committee to provide a basic picture for the Positron Factory. This article presents an overview of the interactions of positrons, intense positron sources and the research program and facilities planned for the project. The interactions of positrons and intense positron sources are discussed focusing on major characteristics of positrons in different energy ranges. The research program for the Positron Factory is then outlined, focusing on advanced positron annihilation techniques, positron spectroscopy (diffraction, scattering, channeling, microscopy), basic positron physics (exotic particle science), and positron beam technology. Discussion is also made of facilities required for the Positron Factory. (N.K.)

  11. A transmission positron microscope and a scanning positron microscope being built at KEK, Japan

    International Nuclear Information System (INIS)

    Doyama, M.; Inoue, M.; Kogure, Y.; Kurihara, T.; Yagishita, A.; Shidara, T.; Nakahara, K.; Hayashi, Y.; Yoshiie, T.

    2001-01-01

    This paper reports the plans of positron microscopes being built at KEK (High Energy Accelerator Research Organization), Tsukuba, Japan improving used electron microscopes. The kinetic energies of positron produced by accelerators or by nuclear decays have not a unique value but show a spread over in a wide range. Positron beam will be guided near electron microscopes, a transmission electron microscope (JEM100S) and a scanning electron microscope (JSM25S). Positrons are slowed down by a tungsten foil, accelerated and focused on a nickel sheet. The monochromatic focused beam will be injected into an electron microscope. The focusing of positrons and electrons is achieved by magnetic system of the electron microscopes. Imaging plates are used to record positron images for the transmission electron microscope. (orig.)

  12. Positron beam studies of solids and surfaces: A summary

    International Nuclear Information System (INIS)

    Coleman, P.G.

    2006-01-01

    A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations

  13. Positron beam studies of solids and surfaces: A summary

    Science.gov (United States)

    Coleman, P. G.

    2006-02-01

    A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations.

  14. Experimentation with low-energy positron beams

    International Nuclear Information System (INIS)

    Mills, A.P. Jr.

    1983-01-01

    The capability of studying the interactions of positrons with surfaces has recently been exploited by using ultra-high-vacuum techniques. The result has been a new understanding of how positrons interact with surfaces and because of this we are now able to make much stronger fluxes of slow positrons. The higher beam strengths in turn are opening up new possibilities for experimentation on surfaces and solids and for studying the atomic physics of positronium and positron-molecule scattering at low energies. The lectures are intended to review some of the history of this subject and to outline the present state of our knowledge of experimentation with low-energy positron beams. (orig./TW)

  15. High efficiency cyclotron trap assisted positron moderator

    OpenAIRE

    Gerchow, L.; Cooke, D. A.; Braccini, S.; Döbeli, M.; Kirch, K.; Köster, U.; Müller, A.; Van Der Meulen, N. P.; Vermeulen, C.; Rubbia, A.; Crivelli, P.

    2017-01-01

    We report the realisation of a cyclotron trap assisted positron tungsten moderator for the conversion of positrons with a broad keV- few MeV energy spectrum to a mono-energetic eV beam with an efficiency of 1.8(2)% defined as the ratio of the slow positrons divided by the $\\beta^+$ activity of the radioactive source. This is an improvement of almost two orders of magnitude compared to the state of the art of tungsten moderators. The simulation validated with this measurement suggests that usi...

  16. The magnetic domain structures of Fe thin films on rectangular land-and-groove substrates studied by spin-polarized secondary electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, S. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan)]. E-mail: uedas@postman.riken.go.jp; Iwasaki, Y. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan); Micro Systems Network Company, Sony Corporation, Tagajo, Miyagi 985-0842 (Japan); Ushioda, S. [Photodynamics Research Center, RIKEN, Aoba-ku, Sendai 980-0845 (Japan); Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577 (Japan)

    2004-10-01

    The magnetic domain structures of Fe thin films on rectangular land-and-groove structures have been studied by spin-polarized secondary electron microscopy (SP-SEM) under an applied dc field. The coercive force on the land area was found to be higher than that on the groove area in the magnetization reversal due to the difference in surface roughness between land and groove areas. The magnetic domain structure and domain wall pinning behavior during the reversal process depended on the direction of the magnetic field relative to the rectangles. These results show that the anisotropy induced by film geometry also contributes to the magnetization reversal process of thin magnetic films on land{sub a}nd{sub g}roove substrates.

  17. Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

    Science.gov (United States)

    Teng, Lihua; Jiang, Tianran; Wang, Xia; Lai, Tianshu

    2018-05-01

    Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov-Perel' (DP) mechanism can be more important than the Bir-Aronov-Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.

  18. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar

    2013-04-11

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  19. Spin polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states

    International Nuclear Information System (INIS)

    Simserides, Constantinos

    2005-01-01

    We study the magnetization, M, and the spin polarization, ζ, of n-doped non-magnetic-semiconductor (NMS)/narrow to wide dilute-magnetic-semiconductor (DMS)/n-doped NMS quantum wells, as a function of the temperature, T, and the in-plane magnetic field, B. Under such conditions the density of states (DOS) deviates from the occasionally stereotypic step-like form, both quantitatively and qualitatively. The DOS modification causes an impressive fluctuation of M in cases of vigorous competition between spatial and magnetic confinement. At low T, the enhanced electron spin-splitting, U oσ , acquires its bigger value. At higher T, U oσ decreases, augmenting the influence of the spin-up electrons. Increasing B, U oσ increases and accordingly electrons populate spin-down subbands while they abandon spin-up subbands. Furthermore, due to the DOS modification, all energetically higher subbands become gradually depopulated

  20. Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

    Science.gov (United States)

    Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

    2009-10-09

    Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

  1. Spin-polarized semiconductors: tuning the electronic structure of graphene by introducing a regular pattern of sp3 carbons on the graphene plane.

    Science.gov (United States)

    Jing, Long; Huang, Ping; Zhu, Huarui; Gao, Xueyun

    2013-01-28

    First-principles calculations (generalized gradient approximation, density functional therory (DFT) with dispersion corrections, and DFT plus local atomic potential) are carried out on the stability and electronic structures of superlattice configurations of nitrophenyl diazonium functionalized graphene with different coverage. In the calculations, the stabilities of these structures are strengthened significantly since van der Waals interactions between nitrophenyl groups are taken into account. Furthermore, spin-polarized and wider-bandgap electronic structures are obtained when the nitrophenyl groups break the sublattice symmetry of the graphene. The unpaired quasi-localized p electrons are responsible for this itinerant magnetism. The results provide a novel approach to tune graphene's electronic structures as well as to form ferromagnetic semiconductive graphene. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Spin polarization of single-crystalline Co2MnSi films grown by PLD on GaAs(0 0 1)

    International Nuclear Information System (INIS)

    Wang, W.H.; Przybylski, M.; Kuch, W.; Chelaru, L.I.; Wang, J.; Lu, Y.F.; Barthel, J.; Kirschner, J.

    2005-01-01

    Single-crystalline Co 2 MnSi Heusler alloy films have been grown on GaAs(0 0 1) substrates by pulsed laser deposition. The best crystallographic quality has been achieved after deposition at 450 K. Spin-resolved photoemission measurements at BESSY reveal spin-resolved density of states that are in qualitative agreement with recent band structure calculations. The spin polarization of photoelectrons close to the Fermi level is found to be at most 12% at room temperature, in contrast to the predicted half-metallic behavior. We suggest that this discrepancy may be attributed to a non-magnetic surface region and/or partial chemical disorder in the Co 2 MnSi lattice

  3. Spin-polarized 3He nuclear targets and metastable 4He atoms by optical pumping with a tunable, Nd:YAP laser

    International Nuclear Information System (INIS)

    Bohler, C.L.; Schearer, L.D.; Leduc, M.; Nacher, P.J.; Zachorowski, L.; Milner, R.G.; McKeown, R.D.; Woodward, C.E.

    1988-01-01

    Several Nd:YAP lasers were constructed which could be broadly tuned in the 1083-nm region which includes the helium 2 3 S-2 3 P transition, using a Lyot filter and thin, uncoated etalons within the laser cavity. 1 W of power could be extracted at 1083 nm through a 1% transmitting output coupler. This laser beam was used to optically pump metastable 4 He and 3 He 2 3 S helium atoms in a weak discharge cell, spin polarizing the metastable ensemble. In a 3 He cell the polarization is transferred to the nuclear spin system. A 3 He target cell at 0.3 Torr was polarized to 52% in a few minutes. We describe the application of this system to the design of polarized targets for experiments in nuclear physics

  4. Strain effects on the spin polarized electron gas in ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures

    KAUST Repository

    Nazir, Safdar; Schwingenschlö gl, Udo

    2013-01-01

    The spin polarized two dimensional electron gas in the correlated ABO3/SrTiO3 (A = Pr, Nd and B = Al, Ga) heterostructures is investigated by ab-initio calculations using density functional theory. Structural relaxation shows a strong buckling at and near the TiO2 terminated n-type interface (IFs) due to significant TiO6 octahedral distortions. We find in all cases, metallic states in a very narrow region of the SrTiO3, in agreement with experimental results. We demonstrate that the interface magnetism strongly reacts to the magnitude of the lattice strain. The orbital occupations and, hence, the charge carrier density change systematically as a function of the lattice mismatch between the component materials.

  5. Enhanced spin polarization of elastic electron scattering from alkaline-earth-metal atoms in Ramsauer-Townsend and low-lying shape resonance regions

    International Nuclear Information System (INIS)

    Yuan, J.; Zhang, Z.

    1993-01-01

    Spin polarizations (SP's) of elastic electron scattering from alkaline-earth-metal atoms in Ramsauer-Townsend (RT) and low-lying shape resonance (SR) regions are calculated using a relativistic method. The detailed SP distributions both with scattering angle and with electron energy are presented via the energy- and angle-dependent surfaces of SP parameters. It is shown that the SP effects of the collisions of electrons with Ca, Sr, and Ba atoms in the RT region are significant in a considerable area on the energy-angle plane and that the spin-orbit interaction is well increased around the low-lying p-wave SR states of Be and Mg and the d-wave SR states of Ca, Sr, and Ba

  6. Spin-polarized current and shot noise in the presence of spin flip in a quantum dot via nonequilibrium Green's functions

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Jauho, Antti-Pekka; Egues, J.C.

    2008-01-01

    Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a ferromagnet-quantum-dot-ferromagnet system. Both parallel (P) and antiparallel (AP) magnetic configurations are considered. Coulomb interaction and coherent spin flip (similar to a transverse magnetic...... field) are taken into account within the dot. We find that the interplay between Coulomb interaction and spin accumulation in the dot can result in a bias-dependent current polarization p. In particular, p can be suppressed in the P alignment and enhanced in the AP case depending on the bias voltage....... The coherent spin flip can also result in a switch of the current polarization from the emitter to the collector lead. Interestingly, for a particular set of parameters it is possible to have a polarized current in the collector and an unpolarized current in the emitter lead. We also found a suppression...

  7. Studies of magnetism and exchange scattering in solids using synchroton radiation and spin-polarized photoemission. Progress report, June 1, 1982-May 31, 1983

    International Nuclear Information System (INIS)

    Rothberg, G.M.

    1983-01-01

    Some of the experiments necessary for proving the existence of Spin Polarized EXAFS (SPEXAFS) and for establishing it as a useful techncique for studying magnetism in solids have been carried out at the Stanford Synchrotron Radiation Laboratory (SSRL) and the National Synchrotron Light Source (NSLS). Transmission EXAFS, which does not depend on electron spin, has been measured in several manganese compounds. The 3s photopeaks of Mn 2 + in MnF 2 have been shown to display EXAFS-like oscillations. The pin dependence of these oscillations will next be studied. Observations of the 3p photopeaks of iron metal on a palladium substrate have shown anomalous intensity variations with varying photon energy. This phenomenon will also be studied further. The existence of Cooper minima in the iron 3s and 3p photoabsorption cross sections has been sought, and this investigation will continue

  8. Shape coexistence in the N=19 neutron-rich nucleus 31Mg explored by β–γ spectroscopy of spin-polarized 31Na

    Directory of Open Access Journals (Sweden)

    H. Nishibata

    2017-04-01

    Full Text Available The structure of excited states in the neutron-rich nucleus 31Mg, which is in the region of the “island of inversion” associated with the neutron magic number N=20, is studied by β–γ spectroscopy of spin-polarized 31Na. Among the 31Mg levels below the one neutron separation energy of 2.3 MeV, the spin values of all five positive-parity levels are unambiguously determined by observing the anisotropic β decay. Two rotational bands with Kπ=1/2+ and 1/2− are proposed based on the spins and energies of the levels. Comparison on a level-by-level basis is performed between the experimental results and theoretical calculations by the antisymmetrized molecular dynamics (AMD plus generator coordinate method (GCM. It is found that various nuclear structures coexist in the low excitation energy region in 31Mg.

  9. Polarization-dependent pump-probe studies in atomic fine-structure levels: towards the production of spin-polarized electrons

    International Nuclear Information System (INIS)

    Sokell, E.; Zamith, S.; Bouchene, M.A.; Girard, B.

    2000-01-01

    The precession of orbital and spin angular momentum vectors has been observed in a pump-probe study of the 4P fine-structure states of atomic potassium. A femtosecond pump pulse prepared a coherent superposition of the two fine-structure components. A time-delayed probe pulse then ionized the system after it had been allowed to evolve freely. Oscillations recorded in the ion signal reflect the evolution of the orientation of the orbital and spin angular momentum due to spin-orbit coupling. This interpretation gives physical insight into the cause of the half-period phase shift observed when the relative polarizations of the laser pulses were changed from parallel to perpendicular. Finally, it is shown that these changes in the orientation of the spin momentum vector of the system can be utilized to produce highly spin-polarized free electrons on the femtosecond scale. (author)

  10. Spin-polarized structural, elastic, electronic and magnetic properties of half-metallic ferromagnetism in V-doped ZnSe

    Energy Technology Data Exchange (ETDEWEB)

    Monir, M. El Amine.; Baltache, H. [Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Faculté des Sciences, Université de Mascara, Mascara 29000 (Algeria); Murtaza, G., E-mail: murtaza@icp.edu.pk [Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar (Pakistan); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Faculté des Sciences, Université de Mascara, Mascara 29000 (Algeria); Ahmed, Waleed K. [ERU, Faculty of Engineering, United Arab Emirates University, Al Ain (United Arab Emirates); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Omran, S. Bin [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Seddik, T. [Laboratoire de Physique Quantique de la Matière et de la Modélisation Mathématique (LPQ3M), Faculté des Sciences, Université de Mascara, Mascara 29000 (Algeria)

    2015-01-15

    Based on first principles spin-polarized density functional theory, the structural, elastic electronic and magnetic properties of Zn{sub 1−x}V{sub x}Se (for x=0.25, 0.50, 0.75) in zinc blende structure have been studied. The investigation was done using the full-potential augmented plane wave method as implemented in WIEN2k code. The exchange-correlation potential was treated with the generalized gradient approximation PBE-GGA for the structural and elastic properties. Moreover, the PBE-GGA+U approximation (where U is the Hubbard correlation terms) is employed to treat the “d” electrons properly. A comparative study between the band structures, electronic structures, total and partial densities of states and local moments calculated within both GGA and GGA+U schemes is presented. The analysis of spin-polarized band structure and density of states shows the half-metallic ferromagnetic character and are also used to determine s(p)-d exchange constants N{sub 0}α (conduction band ) and N{sub 0}β (valence band) due to Se(4p)–V(3d) hybridization. It has been clearly evidence that the magnetic moment of V is reduced from its free space change value of 3 µ{sub B} and the minor atomic magnetic moment on Zn and Se are generated. - Highlights: • Half metallicity origins by doping V in ZnSe. • PBE-GGA+U approximation is employed to treat the “d” electrons properly. • s(p)-d Exchange constants N{sub 0}α (conduction band ) and N{sub 0}β (valence band) are due to Se(4p)-V(3d) hybridization.

  11. Slow briefs: slow food....slow architecture

    OpenAIRE

    Crotch, Joanna

    2012-01-01

    We are moving too fast…fast lives, fast cars, fast food…..and fast architecture. We are caught up in a world that allows no time to stop and think; to appreciate and enjoy all the really important things in our lives. Recent responses to this seemingly unstoppable trend are the growing movements of Slow Food and Cittaslow. Both initiatives are, within their own realms, attempting to reverse speed, homogeny, expediency and globalisation, considering the values of regionality, patience, craft, ...

  12. Search for positron localization near transition-metal solutes of negative effective charge in Ni and Cu

    International Nuclear Information System (INIS)

    Hunter, D.M.; Grynszpan, R.I.; Arrott, A.S.

    1993-01-01

    Results of an early (1973) angular correlation (ACAR) study of dilute (0.5 at.%) Cu based alloys by a Japanese group were interpreted in terms of an attraction of e + by transition metal solutes of effective negative charge. Doppler Broadening (DB) measurements reveal no such an effect for Cu(Mn) and Cu(Ni) solid solutions as well as for Ni alloys with 3d, 4d and 5d transition metal solutes (0.1 to 1.5 at.%) i.e. no evidence of e + localization near these impurities is seen. Our results strongly suggest that the ACAR results are due to the metallurgical state of the samples. In contrast, significant DB lineshape parameter variations, observed for our Ni(Zr) alloys, are attributed to positron trapping in and near Ni 5 Zr precipitates. Our DB results for a series of Ni(Au) alloys are understood in terms of a combination of the effect of an overall lattice expansion and a positron preference for clusters of Au atoms. The above comparison between DB and ACAR results is supported by our 'spin polarized' DB results for a (001) Ni single crystal which resemble those obtained by other groups using a 'spin polarized' 2D-ACAR technique. (orig.)

  13. A Magnetic Transport Middle Eastern Positron Beam

    International Nuclear Information System (INIS)

    Al-Qaradawi, I.Y.; Britton, D.T.; Rajaraman, R.; Abdulmalik, D.

    2008-01-01

    A magnetically guided slow positron beam is being constructed at Qatar University and is currently being optimised for regular operation. This is the first positron beam in the Middle East, as well as being the first Arabic positron beam. Novel features in the design include a purely magnetic in-line deflector, working in the solenoid guiding field, to eliminate un-moderated positrons and block the direct line of sight to the source. The impact of this all-magnetic transport on the Larmor radius and resultant beam characteristics are studied by SIMION simulations for both ideal and real life magnetic field variations. These results are discussed in light of the coupled effect arising from electrostatic beam extraction

  14. K-edge x-ray dichroism investigation of Fe1−xCoxSi: Experimental evidence for spin polarization crossover

    International Nuclear Information System (INIS)

    Hearne, G.R.; Diguet, G.; Baudelet, F.; Itié, J.-P.; Manyala, N.

    2015-01-01

    Both Fe and Co K-edge x-ray magnetic circular dichroism (XMCD) have been employed as element-specific probes of the magnetic moments in the composition series of the disordered ferromagnet Fe 1−x Co x Si (for x=0.2, 0.3, 0.4, 0.5). A definitive single peaked XMCD profile occurs for all compositions at both Fe and Co K-edges. The Fe 4p orbital moment, deduced from the integral of the XMCD signal, has a steep dependence on x at low doping levels and evolves to a different (weaker) dependence at x≥0.3, similar to the behavior of the magnetization in the Co composition range studied here. It is systematically higher, by at least a factor of two, than the corresponding Co orbital moment for most of the composition series. Fine structure beyond the K-edge absorption (limited range EXAFS) suggests that the local order (atomic environment) is very similar across the series, from the perspective of both the Fe and Co absorbing atom. The variation in the XMCD integral across the Co composition range has two regimes, that which occurs below x=0.3 and then evolves to different behavior at higher doping levels. This is more conspicuously present in the Fe contribution. This is rationalized as the evolution from a half-metallic ferromagnet at low Co doping to that of a strong ferromagnet at x>0.3 and as such, spin polarization crossover occurs. The Fermi level is tuned from the majority spin band for x<0.3 where a strongly polarized majority spin electron gas prevails, to a regime where minority spin carriers dominate at higher doping. The evolution of the Fe-derived spin polarized (3d) bands, indirectly probed here via the 4p states, is the primary determinant of the doping dependence of the magnetism in this alloy series. - Highlights: • Element-specific probing of the electronic structure of the Fe 1−x Co x Si series. • XMCD at the level of 10 −4 at the K-edge in such low-moment systems. • Element-specific probing of magnetic contributions from both Fe and Co

  15. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  16. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  17. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  18. Local vacancies in optical modulation polymers studied by positron annihilation lifetime measurements

    International Nuclear Information System (INIS)

    Shimazu, Akira

    2009-01-01

    The ability of a slow positron beam to prove vacancies at the surface and in bulk regions of optical modulation polymers was demonstrated. A slow positron beam system was found to be a powerful tool to study the change in the microstructure driven by photopolymerization of novel optical modulation polymers. (author)

  19. Depth profiling of boron implanted silicon by positron beam

    International Nuclear Information System (INIS)

    Oevuenc, S.

    2004-01-01

    Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

  20. Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

    Science.gov (United States)

    Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

    2018-05-01

    Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

  1. First-principles study of spin-polarized electronic band structures in ferromagnetic Zn1-xTMxS (TM = Fe, Co and Ni)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    We report a first-principles study of structural, electronic and magnetic properties of crystalline alloys Zn1-xTMxS (TM = Fe, Co and Ni) at x = 0.25. Structural properties are computed from the total ground state energy convergence and it is found that the cohesive energies of Zn 1-xTMxS are greater than that of zincblende ZnS. We also study the spin-polarized electronic band structures, total and partial density of states and the effect of TM 3d states. Our results exhibit that Zn 0.75Fe0.25S, Zn0.75Co0.25S and Zn0.75Ni0.25S are half-metallic ferromagnetic with a magnetic moment of 4μB, 3μB and 2μB, respectively. Furthermore, we calculate the TM 3d spin-exchange-splitting energies Δx (d), Δx (x-d), exchange constants N0α and N0β, crystal field splitting (ΔEcrystEt2g-Eeg), and find that p-d hybridization reduces the local magnetic moment of TM from its free space charge value. Moreover, robustness of Zn1-xTMxS with respect to the variation of lattice constants is also discussed. © 2010 Elsevier B.V. All rights reserved.

  2. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  3. Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

    International Nuclear Information System (INIS)

    Eslami, Leila; Esmaeilzadeh, Mahdi

    2014-01-01

    Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

  4. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  5. Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors

    International Nuclear Information System (INIS)

    Ilyasov, Victor V.; Nguyen, Chuong V.; Ershov, Igor V.; Hieu, Nguyen N.

    2015-01-01

    In this work, we present the density functional theory calculations of the effect of an oriented electric field on the electronic structure and spin-polarized transport in a one dimensional (1D) zigzag graphene nanoribbon (ZGNR) channel placed on a wide bandgap semiconductor of the A3B5 type. Our calculations show that carrier mobility in the 1D semiconductor channel of the ZGNR/A3B5(0001) type is in the range from 1.7×10 4 to 30.5×10 4 cm 2 /Vs and can be controlled by an electric field. In particular, at the critical value of the positive potential, even though hole mobility in an one-dimensional 8-ZGNR/h-BN semiconductor channel for spin down electron subsystems is equal to zero, hole mobility can be increased to 4.1×10 5 cm 2 /Vs for spin up electron subsystems. We found that band gap and carrier mobility in a 1D semiconductor channel of the ZGNR/A3B5(0001) type depend strongly on an external electric field. With these extraordinary properties, ZGNR/A3B5(0001) can become a promising materials for application in nanospintronic devices

  6. Studies of magnetism and exchange scattering in solids using synchrotron radiation and spin polarized photoemission. Final technical report, June 1, 1981-May 31, 1984

    International Nuclear Information System (INIS)

    Rothberg, G.M.

    1984-01-01

    Progress has been made toward developing Spin Polarized EXAFS (SPEXAFS) as a technique for studying magnetism in solids. The first observations have been made of EXAFS by means of photoemission with sufficient data to permit a traditional Fourier-transform analysis of atomic structure. Some of the advantages of photoelectron detection of EXAFS are: (1) vuv light may be used thereby extending greatly the useable range of photon energies; (2) the number of elements that may be studied for surface EXAFS is increased; (3) the possibility exists for measurements that cannot be done in other ways. In addition to its intrinsic interest, this result is crucial to the study of the spin dependence of EXAFS. These measurements were carried out on the vuv storage ring at the National Synchrotron Light Source. Data obtained on the spin dependence of EXAFS in MnF 2 at room temperature tentatively show dependence of the Mn absorber atom phase shift on the exchange interaction within the absorber atom. This effect has not been discussed theoretically. Preliminary observations have been made of the Fano resonance in Mn 3d photoemission at the 3p to 3d threshold

  7. Intrinsic spin polarized electronic structure of CrO2 epitaxial film revealed by bulk-sensitive spin-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Fujiwara, Hirokazu; Sunagawa, Masanori; Kittaka, Tomoko; Terashima, Kensei; Wakita, Takanori; Muraoka, Yuji; Yokoya, Takayoshi

    2015-01-01

    We have performed bulk-sensitive spin-resolved photoemission spectroscopy in order to clarify the intrinsic spin-resolved electronic states of half-metallic ferromagnet CrO 2 . We used CrO 2 epitaxial films on TiO 2 (100), which shows a peak at 1 eV with a clear Fermi edge, consistent with the bulk-sensitive PES spectrum for CrO 2 . In spin-resolved spectra at 40 K, while the Fermi edge was observed in the spin up (majority spin) state, no states at the Fermi level (E F ) with an energy gap of 0.5 eV below E F were observed in the spin down (minority spin) state. At 300 K, the gap in the spin down state closes. These results are consistent with resistivity measurements and magnetic hysteresis curves of the fabricated CrO 2 film, constituting spectroscopic evidence for the half-metallicity of CrO 2 at low temperature and reducing the spin polarization at room temperature. We also discuss the electron correlation effects of Cr 3d

  8. Transmission positron microscopes

    International Nuclear Information System (INIS)

    Doyama, Masao; Kogure, Yoshiaki; Inoue, Miyoshi; Kurihara, Toshikazu; Yoshiie, Toshimasa; Oshima, Ryuichiro; Matsuya, Miyuki

    2006-01-01

    Immediate and near-future plans for transmission positron microscopes being built at KEK, Tsukuba, Japan, are described. The characteristic feature of this project is remolding a commercial electron microscope to a positron microscope. A point source of electrons kept at a negative high voltage is changed to a point source of positrons kept at a high positive voltage. Positional resolution of transmission microscopes should be theoretically the same as electron microscopes. Positron microscopes utilizing trapping of positrons have always positional ambiguity due to the diffusion of positrons

  9. Intense positron beam and its application to surface science

    International Nuclear Information System (INIS)

    Ito, Y.; Hirose, M.; Kanazawa, I.; Sueoka, O.; Takamura, S.; Okada, S.

    1992-01-01

    Intense pulsed slow positron beam has been produced using the 100 MeV electron LINAC of JAERI · Tokai. In order to use the beam for surface studies such as positron diffraction and positron microscopy, it was transferred from the solenoid magnetic field to field free region and then was brightness-enhanced. The beam size was reduced from 10 mmφ (in the magnetic field) to 0.5 mmφ after two stages of re-moderation. Using the intense brightness-enhanced positron beam we have observed for the first time RHEPD (Reflection High-Energy Positron Diffraction) patterns. A design of re-emission positron microscopy is also described. (author)

  10. Manipulation of positron orbits in a dipole magnetic field with fluctuating electric fields

    Science.gov (United States)

    Saitoh, H.; Horn-Stanja, J.; Nißl, S.; Stenson, E. V.; Hergenhahn, U.; Pedersen, T. Sunn; Singer, M.; Dickmann, M.; Hugenschmidt, C.; Stoneking, M. R.; Danielson, J. R.; Surko, C. M.

    2018-01-01

    We report the manipulation of positron orbits in a toroidal dipole magnetic field configuration realized with electric fields generated by segmented electrodes. When the toroidal circulation motion of positrons in the dipole field is coupled with time-varying electric fields generated by azimuthally segmented outer electrodes, positrons undergo oscillations of their radial positions. This enables quick manipulation of the spatial profiles of positrons in a dipole field trap by choosing appropriate frequency, amplitude, phase, and gating time of the electric fields. According to numerical orbit analysis, we applied these electric fields to positrons injected from the NEPOMUC slow positron facility into a prototype dipole field trap experiment with a permanent magnet. Measurements with annihilation γ-rays clearly demonstrated the efficient compression effects of positrons into the strong magnetic field region of the dipole field configuration. This positron manipulation technique can be used as one of essential tools for future experiments on the formation of electron-positron plasmas.

  11. Positron emission tomography

    International Nuclear Information System (INIS)

    Iio, Masahiro

    1982-01-01

    Utilization of positron emission tomography was reviewed in relation to construction and planned construction of small-size medical cyclotrons, planned construction of positron cameras and utilization of short-lived radionuclides. (Chiba, N.)

  12. Efficient Cryosolid Positron Moderators

    Science.gov (United States)

    2012-08-01

    table layout Figure 21 shows the integration of the IR spectroscopy optics with the positron Moderation and Annihilation vacuum chambers on the...Characterization of Cryogenic Moderators The application of Matrix Isolation Spectroscopy (MIS) to characterizing cryogenic solid positron ...Matrix Isolation Spectroscopy capability into our Positron Moderation apparatus, which enables spectroscopic characterization of the cryogenic

  13. Positron emission tomography

    International Nuclear Information System (INIS)

    Reivich, M.; Alavi, A.

    1985-01-01

    This book contains 24 selections. Some of the titles are: Positron Emission Tomography Instrumentation, Generator Systems for Positron Emitters, Reconstruction Algorithms, Cerebral Glucose Consumption: Methodology and Validation, Cerebral Blood Flow Tomography Using Xenon-133 Inhalation: Methods and Clinical Applications, PET Studies of Stroke, Cardiac Positron Emission Tomography, and Use of PET in Oncology

  14. Structural stability, electronic and magnetic behaviour of spin-polarized YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rasool, Muhammad Nasir, E-mail: nasir4iub@gmail.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Hussain, Altaf, E-mail: altafiub@yahoo.com [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan); Javed, Athar [Department of Physics, University of the Punjab, Lahore, 54590 (Pakistan); Khan, Muhammad Azhar; Iqbal, F. [Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100 (Pakistan)

    2016-11-01

    The structural stability, electronic and magnetic behaviour of YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) Heusler alloys have been studied by first principle approach. Generalized gradient approximation (GGA) based on density functional theory (DFT) has been applied to investigate the properties of quaternary Heusler alloys. The YCoVSi, YCoVGe, YCoTiSi and YCoTiGe Heusler alloys of Type-3 structure are found to be stable in spin-polarized/magnetic phase. The YCoVSi and YCoVGe alloys exhibit nearly spin gapless semiconductor (SGS) behaviour while YCoTiSi and YCoTiGe alloys show half-metallic ferromagnetic (HMF) behaviour. For YCoVSi, YCoVGe, YCoTiSi and YCoTiGe alloys, the calculated energy band gaps in spin down (↓) channel are 0.60, 0.54, 0.68 and 0.44 eV, respectively. The YCoVZ and YCoTiZ alloys are found to have integral value of total magnetic moment (M{sub T}), thus obeying the Slater-Pauling rule, M{sub T} = (N{sub v}–18)μ{sub B}. - Highlights: • Four Heusler alloys i.e. YCoVZ (Z = Si, Ge) and YCoTiZ (Z = Si, Ge) are studied. • Type-3 crystal structure of all four alloys is stable in magnetic phase. • The compressibility (S) follows the order: S{sub YCoVSi} > S{sub YCoTiSi} > S{sub YCoVGe} > S{sub YCoTiGe}. • Half metallic ferromagnetic behaviour is observed in all four alloys. • All four alloys obey the Slater-Pauling rule, M{sub T} = (N{sub v} – 18)μ{sub B}.

  15. Spin-polarized investigation of ferromagnetism on magnetic semiconductors MnxCa1−xS in the rock-salt phase

    International Nuclear Information System (INIS)

    Choutri, H.; Ghebouli, M.A.; Ghebouli, B.; Bouarissa, N.; Uçgun, E.; Ocak, H.Y.

    2014-01-01

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn x Ca 1−x S is 4.4μ B and 4.5μ B for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ B –4.4μ B and4.5μ B for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn x Ca 1−x S. • Rock-salt phase of Mn x Ca 1−x S. • Magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S. • The use of LDA + U functionals

  16. Spin-polarized investigation of ferromagnetism on magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase

    Energy Technology Data Exchange (ETDEWEB)

    Choutri, H.; Ghebouli, M.A. [LMSE Laboratory, University of Bachir Ibrahimi, 34265 Bordj-Bou-Arréridj (Algeria); Ghebouli, B. [Laboratory of Surface and Interface Studies of Solid Materials, Department of Physics, Faculty of Science, Setif University 1, Setif 19000 (Algeria); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Department of Physics, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Uçgun, E.; Ocak, H.Y. [Department of Physics, Faculty of Arts and Sciences, Dumlupinar University, Kutahya (Turkey)

    2014-12-15

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn{sub x}Ca{sub 1−x}S is 4.4μ{sub B} and 4.5μ{sub B} for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ{sub B}–4.4μ{sub B} and4.5μ{sub B} for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • Rock-salt phase of Mn{sub x}Ca{sub 1−x}S. • Magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • The use of LDA + U functionals.

  17. Electronic structure, magnetism, and exchange integrals in transition-metal oxides: Role of the spin polarization of the functional in DFT+U calculations

    Science.gov (United States)

    Keshavarz, Samara; Schött, Johan; Millis, Andrew J.; Kvashnin, Yaroslav O.

    2018-05-01

    Density functional theory augmented with Hubbard-U corrections (DFT+U ) is currently one of the most widely used methods for first-principles electronic structure modeling of insulating transition-metal oxides (TMOs). Since U is relatively large compared to bandwidths, the magnetic excitations in TMOs are expected to be well described by a Heisenberg model. However, in practice the calculated exchange parameters Ji j depend on the magnetic configuration from which they are extracted and on the functional used to compute them. In this work we investigate how the spin polarization dependence of the underlying exchange-correlation functional influences the calculated magnetic exchange constants of TMOs. We perform a systematic study of the predictions of calculations based on the local density approximation plus U (LDA+U ) and the local spin density approximation plus U (LSDA+U ) for the electronic structures, total energies, and magnetic exchange interactions Ji j extracted from ferromagnetic (FM) and antiferromagnetic (AFM) configurations of several transition-metal oxide materials. We report that for realistic choices of Hubbard U and Hund's J parameters, LSDA+U and LDA+U calculations result in different values of the magnetic exchange constants and band gap. The dependence of the band gap on the magnetic configuration is stronger in LDA+U than in LSDA+U and we argue that this is the main reason why the configuration dependence of Ji j is found to be systematically more pronounced in LDA+U than in LSDA+U calculations. We report a very good correspondence between the computed total energies and the parametrized Heisenberg model for LDA+U calculations, but not for LSDA+U , suggesting that LDA+U is a more appropriate method for estimating exchange interactions.

  18. ELSEPA—Dirac partial-wave calculation of elastic scattering of electrons and positrons by atoms, positive ions and molecules

    Science.gov (United States)

    Salvat, Francesc; Jablonski, Aleksander; Powell, Cedric J.

    2005-01-01

    calculates differential cross sections, total cross sections and transport cross sections for single elastic scattering of electrons and positrons by neutral atoms, positive ions and randomly oriented molecules. For projectiles with kinetic energies less than about 5 MeV, the programs can also compute scattering amplitudes and spin polarization functions. Method of solution: The effective interaction between the projectile and a target atom is represented by a local central potential that can optionally include an imaginary (absorptive) part to account approximately for the coupling with inelastic channels. For projectiles with kinetic energy less that about 5 MeV, the code performs a conventional relativistic Dirac partial-wave analysis. For higher kinetic energies, where the convergence of the partial-wave series is too slow, approximate factorization methods are used. Restrictions on the complexity of the program: The calculations are based on the static-field approximation. The optional correlation-polarization and inelastic absorption corrections are obtained from approximate, semiempirical models. Calculations for molecules are based on a single-scattering independent-atom approximation. To ensure accuracy of the results for scattering by ions, the electron density of the ion must be supplied by the user. Typical running time: on a 2.8 GHz Pentium 4, the calculation of elastic scattering by atoms and ions takes between a few seconds and about two minutes, depending on the atomic number of the target, the adopted potential model and the kinetic energy of the projectile. Unusual features of the program: The program calculates elastic cross sections for electrons and positrons with kinetic energies in a wide range, from a few tens of eV up to about 1 GeV. Calculations can be performed for neutral atoms of all elements, from hydrogen to lawrencium ( Z=1-103), ions and simple molecules. Commercial products are identified to specify the calculational procedures. Such

  19. Present status of positron factory project

    International Nuclear Information System (INIS)

    Okada, S.; Sunaga, H.; Kaneko, H.; Tachibana, H.; Yotsumoto, K.; Okamoto, J.

    1992-01-01

    The Japan Atomic Energy Research Institute, JAERI, has been promoting design studies for the 'Positron Factory', in which linac-based intense monoenergetic positron beams are planned to be applied to advanced materials characterization and new fields of basic research. A tentative goal of the beam intensity is 10 10 s -1 , which is assumed to be realized with an electron linac of 100 kW class with a beam energy around 100 to 150 MeV. We performed a technical survey on the dedicated linac. It confirmed technical feasibility of manufacturing the state-of-the-art machine. We have been carrying out a design study of the target. A new concept of the target design is proposed, which is expected to supply intense slow positron beams simultaneously for multiple beam channels, on the basis of Monte Carlo simulations. (author)

  20. Bremsstrahlung pair-production of positrons with low neutron background

    International Nuclear Information System (INIS)

    Lessner, E.

    1998-01-01

    Minimization of component activation is highly desirable at accelerator-based positron sources. Electrons in the 8- to 14-MeV energy range impinging on a target produce photons energetic enough to create electron-positron pairs; however, few of the photons are energetic enough to produce photoneutrons. Slow positron production by low-energy electrons impinging on a multilayer tungsten target with and without electromagnetic extraction between the layers was studied by simulation. The neutron background from 14-MeV electrons is expected to be significantly lower than that encountered with higher-energy electron beams. Numerical results are presented and some ideas for a low-activation slow-positron source are discussed