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Sample records for spin torque memory

  1. Next generation spin torque memories

    CERN Document Server

    Kaushik, Brajesh Kumar; Kulkarni, Anant Aravind; Prajapati, Sanjay

    2017-01-01

    This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.

  2. Spin Orbit Interaction Engineering for beyond Spin Transfer Torque memory

    Science.gov (United States)

    Wang, Kang L.

    Spin transfer torque memory uses electron current to transfer the spin torque of electrons to switch a magnetic free layer. This talk will address an alternative approach to energy efficient non-volatile spintronics through engineering of spin orbit interaction (SOC) and the use of spin orbit torque (SOT) by the use of electric field to improve further the energy efficiency of switching. I will first discuss the engineering of interface SOC, which results in the electric field control of magnetic moment or magneto-electric (ME) effect. Magnetic memory bits based on this ME effect, referred to as magnetoelectric RAM (MeRAM), is shown to have orders of magnitude lower energy dissipation compared with spin transfer torque memory (STTRAM). Likewise, interests in spin Hall as a result of SOC have led to many advances. Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures have been shown to arise from the large SOC. The large SOC is also shown to give rise to the large SOT. Due to the presence of an intrinsic extraordinarily strong SOC and spin-momentum lock, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. In particular, we will show the magnetization switching in a chromium-doped magnetic TI bilayer heterostructure by charge current. A giant SOT of more than three orders of magnitude larger than those reported in heavy metals is also obtained. This large SOT is shown to come from the spin-momentum locked surface states of TI, which may further lead to innovative low power applications. I will also describe other related physics of SOC at the interface of anti-ferromagnetism/ferromagnetic structure and show the control exchange bias by electric field for high speed memory switching. The work was in part supported by ERFC-SHINES, NSF, ARO, TANMS, and FAME.

  3. Spin Torque Oscillator for High Performance Magnetic Memory

    Directory of Open Access Journals (Sweden)

    Rachid Sbiaa

    2015-06-01

    Full Text Available A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO, and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

  4. Spin orbit torques in W(O) based three terminal magnetic memory devices

    Science.gov (United States)

    Zhang, Jie; Phung, Timothy; Garg, Chirag; Rettner, Charles; Hughes, Brian. P.; Yang, See-Hun; Parkin, Stuart. S. P.

    Recently, there has been a large interest in using spin orbit torques to controllably manipulate the magnetic order parameter in several promising magnetic memory devices such as racetrack memory and spin transfer torque MRAM. The efficient operation of such devices necessitates the finding of materials which exhibit efficient conversion of charge currents to spin orbit torques. This is typically quantified by the so-called spin Hall angle. The most efficient spin orbit torque generator to date based on the use of conventional metallic materials is W(O), wherein the effective spin hall angle is found to be -0.5. Here, we explore the use of W(O) to manipulate magnetization in three terminal magnetic memory devices. We find, consistent with the large spin orbit torques, observed in W(O), that the critical current required for switching a magnetic element is significantly smaller than compared to other metallic systems such as Pt, β-W, and Ta. Lastly, we shall discuss the technologically important high speed ( ns time scale) switching dynamics in these devices and the role of complex micromagnetic states upon the switching process.

  5. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Luc, E-mail: luc.thomas@headway.com; Jan, Guenole; Zhu, Jian; Liu, Huanlong; Lee, Yuan-Jen; Le, Son; Tong, Ru-Ying; Pi, Keyu; Wang, Yu-Jen; Shen, Dongna; He, Renren; Haq, Jesmin; Teng, Jeffrey; Lam, Vinh; Huang, Kenlin; Zhong, Tom; Torng, Terry; Wang, Po-Kang [TDK-Headway Technologies, Inc., Milpitas, California 95035 (United States)

    2014-05-07

    Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 k{sub B}T/μA, energy barriers higher than 100 k{sub B}T at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

  6. Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

    Science.gov (United States)

    Sun, Jonathan Z.

    2016-10-01

    Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

  7. Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

    Energy Technology Data Exchange (ETDEWEB)

    Heinonen, O.

    2014-10-05

    Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

  8. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    International Nuclear Information System (INIS)

    Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

    2014-01-01

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

  9. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Ando, K., E-mail: ando-koji@aist.go.jp; Yuasa, S. [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568 (Japan); Fujita, S.; Ito, J.; Yoda, H. [Toshiba Corporation, Kawasaki 212-8582 (Japan); Suzuki, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan); Nakatani, Y. [Department of Communication Engineering and Informatics, University of Electro-Communication, Chofu 182-8585 (Japan); Miyazaki, T. [WPI-AIMR, Tohoku University, Sendai 980-8577 (Japan)

    2014-05-07

    Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed.

  10. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    Energy Technology Data Exchange (ETDEWEB)

    Song, Kyungmi [KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-713 (Korea, Republic of); Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr [KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-713 (Korea, Republic of); Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2015-08-07

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  11. Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

    Science.gov (United States)

    Song, Kyungmi; Lee, Kyung-Jin

    2015-08-01

    We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

  12. Spin-torque transistor

    NARCIS (Netherlands)

    Bauer, G.E.W.; Brataas, A.; Tserkovnyak, Y.; Van Wees, B.J.

    2003-01-01

    A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin

  13. Using a spin torque nano-oscillator to read memory based on the magnetic permeability

    Science.gov (United States)

    Petrie, J. R.; Urazhdin, S.; Wieland, K. A.; Fischer, G. A.; Edelstein, A. S.

    2014-02-01

    We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K.

  14. 3D Cross-Point Spin Transfer Torque Magnetic Random Access Memory

    Science.gov (United States)

    Yang, Hongxin; Wang, Xiaobin; Hao, Xiaojie; Wang, Zihui; Malmhall, Roger; Gan, Huadong; Satoh, Kimihiro; Zhang, Jing; Jung, Dong Ha; Zhou, Yuchen; Yen, Bing K.; Huai, Yiming

    We explore a 3D cross-point spin transfer torque magnetic random access memory (STT-MRAM) array based on the integration of a perpendicular magnetic tunneling junction (pMTJ) with a matching two-terminal selector. The integrated two-terminal device provides a unique opportunity for a high density, low cost stackable storage class memory that can achieve a fast operation speed, long data retention, low bit error rate (BER) and high endurance. 55nm size pillar shaped pMTJ and selector devices have been fabricated and characterized. The selector is compatible with pMTJ whether it is in the high or low resistance state. The pMTJ can be RESET and SET after the selector turns on. We model the dynamic switching of the coupled pMTJ and selector devices. Our model shows the importance of the optimal matching of pMTJ magnetic properties with selector resistive properties to achieve high performance.

  15. Using a spin torque nano-oscillator to read memory based on the magnetic permeability

    International Nuclear Information System (INIS)

    Petrie, J R; Wieland, K A; Fischer, G A; Edelstein, A S; Urazhdin, S

    2014-01-01

    We present an archival memory utilizing a spin torque nano-oscillator (STNO) to read bits of data with different magnetic permeability. Basing a magnetic memory on this intrinsic property rather than remanent magnetization reduces the risk of data corruption. The permeability of the bits is read as changes in an applied probe field near the media. These changes in the probe field are measured by detecting microwave frequency shifts in STNOs. The probe field can be tuned over hundreds of Oe to optimize the reading of the media. Using a 400 Oe probe field, we have measured 2% frequency shifts in a STNO near micrometre-sized bits of (1) lithographically-patterned permalloy lines and (2) laser-crystallized Metglas lines. Data from either media was not corrupted by exposure to fields of 6400 Oe and temperatures of 523 K. (paper)

  16. Spin-transfer torque magnetic memory as a stochastic memristive synapse for neuromorphic systems.

    Science.gov (United States)

    Vincent, Adrien F; Larroque, Jerome; Locatelli, Nicolas; Ben Romdhane, Nesrine; Bichler, Olivier; Gamrat, Christian; Zhao, Wei Sheng; Klein, Jacques-Olivier; Galdin-Retailleau, Sylvie; Querlioz, Damien

    2015-04-01

    Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features non-volatility, high write and read speed and high endurance. In this work, we show that when used in a non-conventional regime, it can additionally act as a stochastic memristive device, appropriate to implement a "synaptic" function. We introduce basic concepts relating to spin-transfer torque magnetic tunnel junction (STT-MTJ, the STT-MRAM cell) behavior and its possible use to implement learning-capable synapses. Three programming regimes (low, intermediate and high current) are identified and compared. System-level simulations on a task of vehicle counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. The simulations also allow comparing system operation when the different programming regimes of STT-MTJs are used. In comparison to the high and low current regimes, the intermediate current regime allows minimization of energy consumption, while retaining a high robustness to device variations. These results open the way for unexplored applications of STT-MTJs in robust, low power, cognitive-type systems.

  17. Exploring Spin-transfer-torque devices and memristors for logic and memory applications

    Science.gov (United States)

    Pajouhi, Zoha

    As scaling CMOS devices is approaching its physical limits, researchers have begun exploring newer devices and architectures to replace CMOS. Due to their non-volatility and high density, Spin Transfer Torque (STT) devices are among the most prominent candidates for logic and memory applications. In this research, we first considered a new logic style called All Spin Logic (ASL). Despite its advantages, ASL consumes a large amount of static power; thus, several optimizations can be performed to address this issue. We developed a systematic methodology to perform the optimizations to ensure stable operation of ASL. Second, we investigated reliable design of STT-MRAM bit-cells and addressed the conflicting read and write requirements, which results in overdesign of the bit-cells. Further, a Device/Circuit/Architecture co-design framework was developed to optimize the STT-MRAM devices by exploring the design space through jointly considering yield enhancement techniques at different levels of abstraction. Recent advancements in the development of memristive devices have opened new opportunities for hardware implementation of non-Boolean computing. To this end, the suitability of memristive devices for swarm intelligence algorithms has enabled researchers to solve a maze in hardware. In this research, we utilized swarm intelligence of memristive networks to perform image edge detection. First, we proposed a hardware-friendly algorithm for image edge detection based on ant colony. Next, we designed the image edge detection algorithm using memristive networks.

  18. Spin Orbit Torque in Ferromagnetic Semiconductors

    KAUST Repository

    Li, Hang

    2016-06-21

    Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read\\' and `write\\' in memory devices can be significantly improved. Hence, the manipulation of electron spin in electronic devices becomes more and more appealing for the advancement of microelectronics. In spin-based devices, the manipulation of ferromagnetic order parameter using electrical currents is a very useful means for current-driven operation. Nowadays, most of magnetic memory devices are based on the so-called spin transfer torque, which stems from the spin angular momentum transfer between a spin-polarized current and the magnetic order parameter. Recently, a novel spin torque effect, exploiting spin-orbit coupling in non-centrosymmetric magnets, has attracted a massive amount of attention. This thesis addresses the nature of spin-orbit coupled transport and torques in non-centrosymmetric magnetic semiconductors. We start with the theoretical study of spin orbit torque in three dimensional ferromagnetic GaMnAs. Using the Kubo formula, we calculate both the current-driven field-like torque and anti-damping-like torque. We compare the numerical results with the analytical expressions in the model case of a magnetic Rashba two-dimensional electron gas. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. Subsequently we study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. This thesis then addresses the influence of the quantum spin Hall

  19. Manipulating femtosecond spin-orbit torques with laser pulse sequences to control magnetic memory states and ringing

    Science.gov (United States)

    Lingos, P. C.; Wang, J.; Perakis, I. E.

    2015-05-01

    Femtosecond (fs) coherent control of collective order parameters is important for nonequilibrium phase dynamics in correlated materials. Here, we propose such control of ferromagnetic order based on using nonadiabatic optical manipulation of electron-hole (e -h ) photoexcitations to create fs carrier-spin pulses with controllable direction and time profile. These spin pulses are generated due to the time-reversal symmetry breaking arising from nonperturbative spin-orbit and magnetic exchange couplings of coherent photocarriers. By tuning the nonthermal populations of exchange-split, spin-orbit-coupled semiconductor band states, we can excite fs spin-orbit torques that control complex magnetization pathways between multiple magnetic memory states. We calculate the laser-induced fs magnetic anisotropy in the time domain by using density matrix equations of motion rather than the quasiequilibrium free energy. By comparing to pump-probe experiments, we identify a "sudden" out-of-plane magnetization canting displaying fs magnetic hysteresis, which agrees with switchings measured by the static Hall magnetoresistivity. This fs transverse spin-canting switches direction with magnetic state and laser frequency, which distinguishes it from the longitudinal nonlinear optical and demagnetization effects. We propose that sequences of clockwise or counterclockwise fs spin-orbit torques, photoexcited by shaping two-color laser-pulse sequences analogous to multidimensional nuclear magnetic resonance (NMR) spectroscopy, can be used to timely suppress or enhance magnetic ringing and switching rotation in magnetic memories.

  20. Exploration of perpendicular magnetic anisotropy material system for application in spin transfer torque - Random access memory

    Science.gov (United States)

    Natarajarathinam, Anusha

    Perpendicular magnetic anisotropy (PMA) materials have unique advantages when used in magnetic tunnel junctions (MTJ) which are the most critical part of spin-torque transfer random access memory devices (STT-RAMs) that are being researched intensively as future non-volatile memory technology. They have high magnetoresistance which improves their sensitivity. The STT-RAM has several advantages over competing technologies, for instance, low power consumption, non-volatility, ultra-fast read and write speed and high endurance. In personal computers, it can replace SRAM for high-speed applications, Flash for non-volatility, and PSRAM and DRAM for high-speed program execution. The main aim of this research is to identify and optimize the best perpendicular magnetic anisotropy (PMA) material system for application to STT-RAM technology. Preliminary search for perpendicular magnetic anisotropy (PMA) materials for pinned layer for MTJs started with the exploration and optimization of crystalline alloys such as Co50Pd50 alloy, Mn50Al50 and amorphous alloys such as Tb21Fe72Co7 and are first presented in this work. Further optimization includes the study of Co/[Pd/Pt]x multilayers (ML), and the development of perpendicular synthetic antiferromagnets (SAF) utilizing these multilayers. Focused work on capping and seed layers to evaluate interfacial perpendicular anisotropy in free layers for pMTJs is then discussed. Optimization of the full perpendicular magnetic tunnel junction (pMTJ) includes the CoFeB/MgO/CoFeB trilayer coupled to a pinned/pinning layer with perpendicular Co/[Pd/Pt]x SAF and a thin Ta seeded CoFeB free layer. Magnetometry, simulations, annealing studies, transport measurements and TEM analysis on these samples will then be presented.

  1. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

    Directory of Open Access Journals (Sweden)

    Austin Deschenes

    2016-11-01

    Full Text Available Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM. Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ, most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

  2. Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory.

    Science.gov (United States)

    Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa; Gokirmak, Ali; Silva, Helena

    2016-01-01

    Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

  3. Spin Torques in Systems with Spin Filtering and Spin Orbit Interaction

    KAUST Repository

    Ortiz Pauyac, Christian

    2016-06-19

    In the present thesis we introduce the reader to the field of spintronics and explore new phenomena, such as spin transfer torques, spin filtering, and three types of spin-orbit torques, Rashba, spin Hall, and spin swapping, which have emerged very recently and are promising candidates for a new generation of memory devices in computer technology. A general overview of these phenomena is presented in Chap. 1. In Chap. 2 we study spin transfer torques in tunnel junctions in the presence of spin filtering. In Chap. 3 we discuss the Rashba torque in ferromagnetic films, and in Chap. 4 we study spin Hall effect and spin swapping in ferromagnetic films, exploring the nature of spin-orbit torques based on these mechanisms. Conclusions and perspectives are summarized in Chap. 5.

  4. Spin Transfer Torque in Graphene

    Science.gov (United States)

    Lin, Chia-Ching; Chen, Zhihong

    2014-03-01

    Graphene is an idea channel material for spin transport due to its long spin diffusion length. To develop graphene based spin logic, it is important to demonstrate spin transfer torque in graphene. Here, we report the experimental measurement of spin transfer torque in graphene nonlocal spin valve devices. Assisted by a small external in-plane magnetic field, the magnetization reversal of the receiving magnet is induced by pure spin diffusion currents from the injector magnet. The magnetization switching is reversible between parallel and antiparallel configurations by controlling the polarity of the applied charged currents. Current induced heating and Oersted field from the nonlocal charge flow have also been excluded in this study. Next, we further enhance the spin angular momentum absorption at the interface of the receiving magnet and graphene channel by removing the tunneling barrier in the receiving magnet. The device with a tunneling barrier only at the injector magnet shows a comparable nonlocal spin valve signal but lower electrical noise. Moreover, in the same preset condition, the critical charge current density for spin torque in the single tunneling barrier device shows a substantial reduction if compared to the double tunneling barrier device.

  5. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    Science.gov (United States)

    Munira, Kamaram; Visscher, P. B.

    2015-05-01

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(-Ee f f/kBT ) . Here, the effective energy barrier Eeff scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  6. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Science.gov (United States)

    Tomczak, Y.; Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Liu, E.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A.

    2016-01-01

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm2 after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  7. Macrospin modeling of sub-ns pulse switching of perpendicularly magnetized free layer via spin-orbit torques for cryogenic memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Park, Junbo; Rowlands, G. E.; Lee, O. J.; Buhrman, R. A. [Cornell University, Ithaca, New York 14853 (United States); Ralph, D. C. [Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell, Ithaca, New York 14853 (United States)

    2014-09-08

    We model, using the macrospin approximation, the magnetic reversal of a perpendicularly magnetized nanostructured free layer formed on a normal, heavy-metal nanostrip, subjected to spin-orbit torques (SOTs) generated by short (≤0.5 ns) current pulses applied to the nanostrip, to examine the potential for SOT-based fast, efficient cryogenic memory. Due to thermal fluctuations, if solely an anti-damping torque is applied, then, for a device with sufficiently low anisotropy (H{sub anis}{sup 0} ∼ 1 kOe) suitable for application in cryogenic memory, a high magnetic damping parameter (α∼0.1−0.2) is required for reliable switching over a significant variation of pulse current. The additional presence of a substantial field-like torque improves switching reliability even for low damping (α≤0.03).

  8. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    Energy Technology Data Exchange (ETDEWEB)

    Munira, Kamaram [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35401 (United States); Visscher, P. B., E-mail: visscher@ua.edu [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35401 (United States); Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35401 (United States)

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  9. Spin-orbit torques in magnetic bilayers

    Science.gov (United States)

    Haney, Paul

    2015-03-01

    Spintronics aims to utilize the coupling between charge transport and magnetic dynamics to develop improved and novel memory and logic devices. Future progress in spintronics may be enabled by exploiting the spin-orbit coupling present at the interface between thin film ferromagnets and heavy metals. In these systems, applying an in-plane electrical current can induce magnetic dynamics in single domain ferromagnets, or can induce rapid motion of domain wall magnetic textures. There are multiple effects responsible for these dynamics. They include spin-orbit torques and a chiral exchange interaction (the Dzyaloshinskii-Moriya interaction) in the ferromagnet. Both effects arise from the combination of ferromagnetism and spin-orbit coupling present at the interface. There is additionally a torque from the spin current flux impinging on the ferromagnet, arising from the spin hall effect in the heavy metal. Using a combination of approaches, from drift-diffusion to Boltzmann transport to first principles methods, we explore the relative contributions to the dynamics from these different effects. We additionally propose that the transverse spin current is locally enhanced over its bulk value in the vicinity of an interface which is oriented normal to the charge current direction.

  10. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Energy Technology Data Exchange (ETDEWEB)

    Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  11. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-10-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

  12. Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

    International Nuclear Information System (INIS)

    Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2013-01-01

    We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle

  13. Heat-driven spin torques in antiferromagnets

    Science.gov (United States)

    Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe

    2018-04-01

    Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.

  14. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  15. Spin-wave-induced spin torque in Rashba ferromagnets

    Science.gov (United States)

    Umetsu, Nobuyuki; Miura, Daisuke; Sakuma, Akimasa

    2015-05-01

    We study the effects of Rashba spin-orbit coupling on the spin torque induced by spin waves, which are the plane-wave dynamics of magnetization. The spin torque is derived from linear-response theory, and we calculate the dynamic spin torque by considering the impurity-ladder-sum vertex corrections. This dynamic spin torque is divided into three terms: a damping term, a distortion term, and a correction term for the equation of motion. The distorting torque describes a phenomenon unique to the Rashba spin-orbit coupling system, where the distorted motion of magnetization precession is subjected to the anisotropic force from the Rashba coupling. The oscillation mode of the precession exhibits an elliptical trajectory, and the ellipticity depends on the strength of the nesting effects, which could be reduced by decreasing the electron lifetime.

  16. Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Luc, E-mail: luc.thomas@headway.com; Jan, Guenole; Le, Son; Wang, Po-Kang [TDK-Headway Technologies, Inc., 463 S. Milpitas Boulevard, Milpitas, California 95035 (United States)

    2015-04-20

    The thermal stability of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) devices is investigated at chip level. Experimental data are analyzed in the framework of the Néel-Brown model including distributions of the thermal stability factor Δ. We show that in the low error rate regime important for applications, the effect of distributions of Δ can be described by a single quantity, the effective thermal stability factor Δ{sub eff}, which encompasses both the median and the standard deviation of the distributions. Data retention of memory chips can be assessed accurately by measuring Δ{sub eff} as a function of device diameter and temperature. We apply this method to show that 54 nm devices based on our perpendicular STT-MRAM design meet our 10 year data retention target up to 120 °C.

  17. Spin transport and spin torque in antiferromagnetic devices

    Science.gov (United States)

    Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

    2018-03-01

    Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

  18. Spin diffusion and torques in disordered antiferromagnets

    KAUST Repository

    Manchon, Aurelien

    2017-02-01

    We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

  19. Macroscopic description of spin transfer torque

    International Nuclear Information System (INIS)

    Barnas, J.; Fert, A.; Gmitra, M.; Weymann, I.; Dugaev, V.K.

    2006-01-01

    A macroscopic description of the current-induced torque due to spin transfer has been developed for layered systems consisting of ferromagnetic films, separated by nonmagnetic layers. The description is based on the classical spin diffusion equations for the distribution functions used in the theory of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), and the relevant boundary conditions for the longitudinal and transverse components of the spin current and spin accumulation. The torque is expressed as a function of the usual parameters derived from CPP-GMR experiments and two additional parameters involved in the transverse boundary conditions. The model describes qualitatively the normal and inverse switching phenomena studied in recent experiments. We also discuss a structure for which the spin torque disappears at a noncollinear magnetic configuration

  20. Spin Hall and spin swapping torques in diffusive ferromagnets

    KAUST Repository

    Pauyac, C. O.

    2017-12-08

    A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

  1. Feedback control of noise in spin valves by the spin-transfer torque

    NARCIS (Netherlands)

    Bandopadyay, S.; Brataas, A.; Bauer, G.E.W.

    2011-01-01

    The miniaturization of magnetic read heads and random access memory elements makes them vulnerable to thermal fluctuations. We demonstrate how current-induced spin-transfer torques can be used to suppress the effects of thermal fluctuations. This enhances the fidelity of perpendicular magnetic spin

  2. Spin-transfer torque generated by a topological insulator

    KAUST Repository

    Mellnik, A. R.

    2014-07-23

    Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron\\' s spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi 2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications. © 2014 Macmillan Publishers Limited. All rights reserved.

  3. Angular dependence of spin-orbit spin-transfer torques

    KAUST Repository

    Lee, Ki-Seung

    2015-04-06

    In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

  4. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  5. Spin-torque switching of a nano-magnet using giant spin hall effect

    Directory of Open Access Journals (Sweden)

    Ashish V. Penumatcha

    2015-10-01

    Full Text Available The Giant Spin Hall Effect(GSHE in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

  6. Manipulation of spin transfer torque using light

    Science.gov (United States)

    Rontani, Massimo; Vendelbjerg, Karsten; Sham, Lu

    We show that the spin transfer torque induced by a spin-polarized current on a nanomagnet as the current flows through a semiconductor-nanomagnet-semiconductor junction is externally controlled by shining the junction off-resonantly with a strong laser beam. The excitonic coherence driven by the laser dresses the virtual electron-hole pairs coupling conduction and valence bands and inducing an evanescent state in the proximity of the nanomagnet. The Fano-like quantum interference between this localized state and the continuum spectrum is different in the two spin channels and hence it dramatically alters the spin transport, leading to the coherent control of the spin transfer torque. This work is supported by EU-FP7 Marie Curie Initial Training Network INDEX.

  7. Spin-transfer torque in Co/Graphene/Co vertical heterostructures: A route toward magnetic memories with low write energy and ultrahigh magnetoresistance

    Science.gov (United States)

    Dolui, Kapildeb; Chang, Po-Hao; Mahfouzi, Farzad; Markussen, Troels; Stokbro, Kurt; Nikolić, Branislav K.

    The MgO-based magnetic tunnel junctions (MTJs) are presently the workhorse of first generation spintronics, based on magnetoresistitive phenomena, as well as for second generation spintronics largely focused on spin-transfer torque (STT) phenomena. Although MgO-based MTJs offer large tunneling magnetoresistance (TMR), required to detect current-driven magnetization switching from parallel to antiparallel state, they demand high bias voltage to initiate the switching dynamics which can lead to tunnel barrier degradation. Thus, an ideal physical system for envisioned STT-based memory devices and their integration with low-power CMOS technology would exhibit high TMR and low resistance-area (RA) product, ensuring small write voltages and write energy. Using first-principles quantum transport formalism, we predict that Co/Grn/Co vertical heterostructures, where Co(111) electrodes sandwich n layers of graphene, offer such physical system. Although Co/Gr1/Co junctions show similar STT magnitude as Co/Cu/Co spin valves in the linear-response regime, TMR >100% requires Co/Gr3/Co junctions whose RA product is still two orders of magnitude smaller than in MgO-based MTJs, while their magnetization switching can be initiated with bias voltages as small as Vb < 0 . 1 V.

  8. Spin Hall effect-driven spin torque in magnetic textures

    KAUST Repository

    Manchon, Aurelien

    2011-07-13

    Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

  9. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  10. Tailoring spin-orbit torque in diluted magnetic semiconductors

    KAUST Repository

    Li, Hang

    2013-05-16

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

  11. Spin-orbit torques and charge pumping in crystalline magnets

    Science.gov (United States)

    Ciccarelli, Chiara

    In magnetic crystals with an inversion asymmetric unit cell a non-zero global spin-polarization is generated by an electrical current, which acts with a torque on the magnetisation exciting magnetic dynamics. This relativistic non-equilibrium spin phenomenon also has a reciprocal effect in which the excitation of magnons results in the pumping of a charge current. The possibility to manipulate/read magnetism with electrical currents is highly relevant for magnetic memories and other spintronic devices. I will start by reviewing our recent research on spin-orbit torques (SOTs) in crystalline magnets, in particular our very recent measurements of the crystalline SOT at room temperature in half-Heusler NiMnSb thin films. With this experiment we are able to fully characterise magnitude and symmetry of the SOTs. I will then talk about the first demonstration of magnonic charge pumping in crystal magnet GaMnAs. In this effect, which is the reciprocal effect of SOTs, the precessing ferromagnet pumps a charge current. Differently from spin pumping, which is commonly used to electrically detect magnetization dynamics, in charge pumping magnons are converted within the ferromagnet into high-frequency currents via the relativistic spin-orbit interaction, without the need of a secondary spin-charge conversion element, such as heavy metals with large spin Hall angle.

  12. Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

    Science.gov (United States)

    Sasaki, Taro; Endoh, Tetsuo

    2018-04-01

    In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

  13. Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

    International Nuclear Information System (INIS)

    Chavent, A.; Ducruet, C.; Portemont, C.; Creuzet, C.; Alvarez-Hérault, J.; Vila, L.; Sousa, R. C.; Prejbeanu, I. L.; Dieny, B.

    2015-01-01

    This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer

  14. Manipulating spin transfer torque with light

    Science.gov (United States)

    Vendelbjerg, Karsten Leding; Rontani, Massimo

    2017-08-01

    We study the spin transfer torque (STT) induced onto a nanomagnet as a spin-polarized current flows through a junction made of the magnet sandwiched between two semiconductors. This junction is one-dimensional and highly idealized, the thin magnetic layer being mimicked by a spin-dependent contact force. We show that the STT may be externally controlled by shining the junction at sub-bandgap frequency with an intense laser beam. The excitonic coherence driven by the laser dresses the virtual electron-hole pairs coupling conduction and valence bands and inducing evanescent waves at the junction interface. The Fano-like quantum interference between these localized states and the continuum spectrum, being different in the two spin channels, significantly affects the STT.

  15. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  16. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

    2015-01-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

  17. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  18. Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

    Science.gov (United States)

    Hung, Yu-Ming

    This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then demonstrate the device operation by using micromagnetic modeling which involves studying the magnetic coupling induced by fringe fields from chiral DWs in perpendicularly magnetized nanowires. The last part of my thesis project reports spin transport and spin-Hall magnetoresistance (SMR) in yttrium iron garnet Y3Fe5O 12 (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite

  19. Spatially and time-resolved magnetization dynamics driven by spin-orbit torques

    OpenAIRE

    Baumgartner, Manuel; Garello, Kevin; Mendil, Johannes; Avci, Can O.; Grimaldi, Eva; Murer, Christoph; Feng, Junxiao; Gabureac, Mihai; Stamm, Christian; Acremann, Yves; Finizio, Simone; Wintz, Sebastian; Raabe, Jörg; Gambardella, Pietro

    2017-01-01

    Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have ...

  20. Spin-torque generation in topological insulator based heterostructures

    KAUST Repository

    Fischer, Mark H.

    2016-03-11

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

  1. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  2. Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2014-05-28

    Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

  3. Parameter dependence of resonant spin torque magnetization reversal

    International Nuclear Information System (INIS)

    Fricke, L.; Serrano-Guisan, S.; Schumacher, H.W.

    2012-01-01

    We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

  4. Parameter dependence of resonant spin torque magnetization reversal

    Science.gov (United States)

    Fricke, L.; Serrano-Guisan, S.; Schumacher, H. W.

    2012-04-01

    We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

  5. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    Science.gov (United States)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  6. Intrinsic and extrinsic spin-orbit torques from first principles

    International Nuclear Information System (INIS)

    Geranton, Guillaume

    2017-01-01

    This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag 2 Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag 2 Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT-based magnetic

  7. Intrinsic and extrinsic spin-orbit torques from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Geranton, Guillaume

    2017-09-01

    This thesis attempts to shed light on the microscopic mechanisms underlying the current-induced magnetic torques in ferromagnetic heterostructures. We have developed first principles methods aiming at the accurate and effcient calculation of the so-called spin-orbit torques (SOTs) in magnetic thin films. The emphasis of this work is on the impurity-driven extrinsic SOTs. The main part of this thesis is dedicated to the development of a formalism for the calculation of the SOTs within the Korringa-Kohn-Rostoker (KKR) method. The impurity-induced transitions rates are obtained from first principles and their effect on transport properties is treated within the Boltzmann formalism. The developed formalism provides a mean to compute the SOTs beyond the conventional constant relaxation time approximation. We first apply our formalism to the investigation of FePt/Pt and Co/Cu bilayers in the presence of defects and impurities. Our results hint at a crucial dependence of the torque on the type of disorder present in the films, which we explain by a complex interplay of several competing Fermi surface contributions to the SOT. Astonishingly, specific defect distributions or doping elements lead respectively to an increase or a sign change of the torque, which can not be explained on the basis of simple models. We also compute the intrinsic SOT induced by electrical and thermal currents within the full potential linearized augmented plane-wave method. Motivated by recent experimental works, we then investigate the microscopic origin of the SOT in a Ag{sub 2}Bi-terminated Ag film grown on ferromagnetic Fe(110). We find that the torque in that system can not be explained solely by the spin-orbit coupling in the Ag{sub 2}Bi alloy, and instead results from the spin-orbit coupling in all regions of the film.Finally, we predict a large SOT in Fe/Ge bilayers and suggest that semiconductor substrates might be a promising alternative to heavy metals for the development of SOT

  8. Current-induced torques and interfacial spin-orbit coupling

    KAUST Repository

    Haney, Paul M.

    2013-12-19

    In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

  9. Sign Reversal of Fieldlike Spin-Orbit Torque in an Ultrathin Cr /Ni Bilayer

    Science.gov (United States)

    Bose, Arnab; Singh, Hanuman; Kushwaha, Varun Kumar; Bhuktare, Swapnil; Dutta, Sutapa; Tulapurkar, Ashwin A.

    2018-01-01

    Relativistically originated spin-orbit torque is one of the promising ways to control the magnetization dynamics of a ferromagnet, which can be useful for the next generation of spintronic memory applications. Plenty of effort has been made to address the physical origin of spin-orbit torque and improve its efficiency. In this work, we demonstrate that in ultrathin chromium/nickel (Cr /Ni ) heterostructure, spin-orbit torque is significantly enhanced for a Cr thickness below 6 nm, which is related to the possible phase change of Cr at a lower thickness. We have also observed an unconventional sign reversal of a fieldlike torque which can be attributed to the interfacial Rashba-like coupling. We experimentally obtain that approximately a 35-Oe Rashba-like magnetic field is created on 8-nm-thick in-plane magnetized Ni film when 108 A /cm2 current density flows through the Cr layer.

  10. Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2016-07-12

    Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

  11. A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching

    Science.gov (United States)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2017-04-01

    A high-density nonvolatile associative memory (NV-AM) based on spin transfer torque magnetoresistive random access memory (STT-MRAM), which achieves highly concurrent and ultralow-power nearest neighbor search with full adaptivity of the template data format, has been proposed and fabricated using the 90 nm CMOS/70 nm perpendicular-magnetic-tunnel-junction hybrid process. A truly compact current-mode circuitry is developed to realize flexibly controllable and high-parallel similarity evaluation, which makes the NV-AM adaptable to any dimensionality and component-bit of template data. A compact dual-stage time-domain minimum searching circuit is also developed, which can freely extend the system for more template data by connecting multiple NM-AM cores without additional circuits for integrated processing. Both the embedded STT-MRAM module and the computing circuit modules in this NV-AM chip are synchronously power-gated to completely eliminate standby power and maximally reduce operation power by only activating the currently accessed circuit blocks. The operations of a prototype chip at 40 MHz are demonstrated by measurement. The average operation power is only 130 µW, and the circuit density is less than 11 µm2/bit. Compared with the latest conventional works in both volatile and nonvolatile approaches, more than 31.3% circuit area reductions and 99.2% power improvements are achieved, respectively. Further power performance analyses are discussed, which verify the special superiority of the proposed NV-AM in low-power and large-memory-based VLSIs.

  12. Spin-orbit-coupled transport and spin torque in a ferromagnetic heterostructure

    KAUST Repository

    Wang, Xuhui

    2014-02-07

    Ferromagnetic heterostructures provide an ideal platform to explore the nature of spin-orbit torques arising from the interplay mediated by itinerant electrons between a Rashba-type spin-orbit coupling and a ferromagnetic exchange interaction. For such a prototypic system, we develop a set of coupled diffusion equations to describe the diffusive spin dynamics and spin-orbit torques. We characterize the spin torque and its two prominent—out-of-plane and in-plane—components for a wide range of relative strength between the Rashba coupling and ferromagnetic exchange. The symmetry and angular dependence of the spin torque emerging from our simple Rashba model is in an agreement with experiments. The spin diffusion equation can be generalized to incorporate dynamic effects such as spin pumping and magnetic damping.

  13. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    Science.gov (United States)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-01

    A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  14. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    International Nuclear Information System (INIS)

    Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-01-01

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  15. Spin-Orbit Torques in Co/Pd Multilayer Nanowires

    KAUST Repository

    Jamali, Mahdi

    2013-12-09

    Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 108  A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1  nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.

  16. Intraband and interband spin-orbit torques in noncentrosymmetric ferromagnets

    KAUST Repository

    Li, Hang

    2015-04-01

    Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using the Kubo formula. In addition to the current-driven fieldlike torque TFL=τFLm×uso (uso being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form TDL=τDLm×(uso×m). Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchange coupled to the Mn moments. Parametric dependencies of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.

  17. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  18. Skyrmionic spin Seebeck effect via dissipative thermomagnonic torques

    Science.gov (United States)

    Kovalev, Alexey A.

    2014-06-01

    We derive thermomagnonic torque and its "β-type" dissipative correction from the stochastic Landau-Lifshitz-Gilbert equation. The β-type dissipative correction describes viscous coupling between magnetic dynamics and magnonic current and it stems from spin mistracking of the magnetic order. We show that thermomagnonic torque is important for describing temperature gradient induced motion of skyrmions in helical magnets while dissipative correction plays an essential role in generating transverse Magnus force. We propose to detect such skyrmionic motion by employing the transverse spin Seebeck effect geometry.

  19. Temperature dependence of spin-orbit torques in Cu-Au alloys

    KAUST Repository

    Wen, Yan

    2017-03-07

    We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

  20. Observation of thermally driven field-like spin torque in magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bose, Arnab, E-mail: arnabbose@ee.iitb.ac.in; Jain, Sourabh; Asam, Nagarjuna; Bhuktare, Swapnil; Singh, Hanuman; Tulapurkar, Ashwin A. [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Shukla, Amit Kumar; Konishi, Katsunori; Lam, Duc Duong; Fujii, Yuya; Miwa, Shinji; Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2016-07-18

    We report the thermally driven giant field-like spin-torque in magnetic tunnel junctions (MTJ) on application of heat current from top to bottom. The field-like term is detected by the shift of the magneto-resistance hysteresis loop applying temperature gradient. We observed that the field-like term depends on the magnetic symmetry of the MTJ. In asymmetric structures, with different ferromagnetic materials for free and fixed layers, the field-like term is greatly enhanced. Our results show that a pure spin current density of the order of 10{sup 9 }A/m{sup 2} can be produced by creating a 120 mK temperature difference across 0.9 nm thick MgO tunnelling barrier. Our results will be useful for writing MTJ and domain wall-based memories using thermally driven spin torque.

  1. Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2011-05-17

    Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

  2. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  3. Spin-Orbit Torques in ferrimagnetic GdFeCo

    Science.gov (United States)

    Roschewsky, Niklas; Lambert, Charles-Henri; Salahuddin, Sayeef

    Recently spin-orbit torques in antiferromagnets received a lot of attention due to intrinsic high frequency dynamics as well as robustness against perturbations from external magnetic fields. Here, we report on spin-orbit torque (SOT) switching in ferrimagnetic Gdx (Fe90Co10)100-x films on both sides of the magnetic compensation point. In addition to current driven switching experiments we performed harmonic Hall measurements of the effective SOT fields. We find that both the Slonczewski torque as well as the field-like torque diverge at the magnetization compensation point. However, the effective spin Hall angle ξ = (2 | e | / ℏ) MStFM (Heff / | jHM |) is found to be roughly constant across the investigated composition range. This provides important insight into the the angular momentum transfer process in ferrimagnets. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05-CH11231 within the NEMM program (KC2204).

  4. Interface-Enhanced Spin-Orbit Torques and Current-Induced Magnetization Switching of Pd /Co /AlOx Layers

    Science.gov (United States)

    Ghosh, Abhijit; Garello, Kevin; Avci, Can Onur; Gabureac, Mihai; Gambardella, Pietro

    2017-01-01

    Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to developing electrically controlled memory and logic devices. Here, we report on vector measurements of the current-induced spin-orbit torques and magnetization switching in perpendicularly magnetized Pd /Co /AlOx layers as a function of Pd thickness. We find sizable dampinglike (DL) and fieldlike (FL) torques, on the order of 1 mT per 107 A /cm2 , which have different thicknesses and magnetization angle dependencies. The analysis of the DL torque efficiency per unit current density and the electric field using drift-diffusion theory leads to an effective spin Hall angle and spin-diffusion length of Pd larger than 0.03 and 7 nm, respectively. The FL spin-orbit torque includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and, furthermore, is strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd /Co /AlOx layers with a similar current density to that used for Pt /Co layers with a comparable perpendicular magnetic anisotropy.

  5. Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

    KAUST Repository

    Li, Lailai

    2017-10-04

    Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

  6. A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

    Directory of Open Access Journals (Sweden)

    Hyein Lim

    2013-01-01

    Full Text Available Spin-torque oscillator (STO is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

  7. Dynamics of spin torque switching in all-perpendicular spin valve nanopillars

    International Nuclear Information System (INIS)

    Liu, H.; Bedau, D.; Sun, J.Z.; Mangin, S.; Fullerton, E.E.; Katine, J.A.; Kent, A.D.

    2014-01-01

    We present a systematic experimental study of the spin-torque-induced magnetic switching statistics at room temperature, using all-perpendicularly magnetized spin-valves as a model system. Three physical regimes are distinguished: a short-time ballistic limit below a few nanoseconds, where spin-torque dominates the reversal dynamics from a thermal distribution of initial conditions; a long time limit, where the magnetization reversal probability is determined by spin-torque-amplified thermal activation; and a cross-over regime, where the spin-torque and thermal agitation both contribute. For a basic quantitative understanding of the physical processes involved, an analytical macrospin model is presented which contains both spin-torque dynamics and finite temperature effects. The latter was treated rigorously using a Fokker–Plank formalism, and solved numerically for specific sets of parameters relevant to the experiments to determine the switching probability behavior in the short-time and cross-over regimes. This analysis shows that thermal fluctuations during magnetization reversal greatly affect the switching probability over all the time scales studied, even in the short-time limit

  8. Model for a collimated spin wave beam generated by a single layer, spin torque nanocontact

    OpenAIRE

    Hoefer, M. A.; Silva, T. J.; Stiles, M. D.

    2007-01-01

    A model of spin torque induced magnetization dynamics based upon semi-classical spin diffusion theory for a single layer nanocontact is presented. The model incorporates effects due to the current induced Oersted field and predicts the generation of a variety of spatially dependent, coherent, precessional magnetic wave structures. Directionally controllable collimated spin wave beams, vortex spiral waves, and localized standing waves are found to be excited by the interplay of the Oersted fie...

  9. Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

    International Nuclear Information System (INIS)

    Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

    2003-01-01

    We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

  10. Spin transfer torque generated magnetic droplet solitons (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Chung, S. [Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Mohseni, S. M. [Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); NanOsc AB, Electrum 205, 164 40 Kista (Sweden); Department of Physics, Shahid Beheshti University, G.C., Evin, Tehran 19839 (Iran, Islamic Republic of); Sani, S. R. [Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); NanOsc AB, Electrum 205, 164 40 Kista (Sweden); Iacocca, E.; Dumas, R. K.; Pogoryelov, Ye. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Anh Nguyen, T. N. [Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Laboratory for Nanotechnology (LNT), Vietnam National University - Ho Chi Minh City (VNU-HCM), Ho Chi Minh City (Viet Nam); Muduli, P. K. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Eklund, A. [Devices and Circuits, School of ICT, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Hoefer, M. [Department of Mathematics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Åkerman, J., E-mail: johan.akerman@physics.gu.se [Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); NanOsc AB, Electrum 205, 164 40 Kista (Sweden)

    2014-05-07

    We present recent experimental and numerical advancements in the understanding of spin transfer torque generated magnetic droplet solitons. The experimental work focuses on nano-contact spin torque oscillators (NC-STOs) based on orthogonal (pseudo) spin valves where the Co fixed layer has an easy-plane anisotropy, and the [Co/Ni] free layer has a strong perpendicular magnetic anisotropy. The NC-STO resistance and microwave signal generation are measured simultaneously as a function of drive current and applied perpendicular magnetic field. Both exhibit dramatic transitions at a certain current dependent critical field value, where the microwave frequency drops 10 GHz, modulation sidebands appear, and the resistance exhibits a jump, while the magnetoresistance changes sign. We interpret these observations as the nucleation of a magnetic droplet soliton with a large fraction of its magnetization processing with an angle greater than 90°, i.e., around a direction opposite that of the applied field. This interpretation is corroborated by numerical simulations. When the field is further increased, we find that the droplet eventually collapses under the pressure from the Zeeman energy.

  11. High frequency spin torque oscillators with composite free layer spin valve

    International Nuclear Information System (INIS)

    Natarajan, Kanimozhi; Arumugam, Brinda; Rajamani, Amuda

    2016-01-01

    We report the oscillations of magnetic spin components in a composite free layer spin valve. The associated Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation is studied by stereographically projecting the spin on to a complex plane and the spin components were found. A fourth order Runge–Kutta numerical integration on LLGS equation also confirms the similar trajectories of the spin components. This study establishes the possibility of a Spin Torque Oscillator in a composite free layer spin valve, where the exchange coupling is ferromagnetic in nature. In-plane and out-of-plane precessional modes of magnetization oscillations were found in zero applied magnetic field and the frequencies of the oscillations were calculated from Fast Fourier Transform of the components of magnetization. Behavior of Power Spectral Density for a range of current density is studied. Finally our analysis shows the occurrence of highest frequency 150 GHz, which is in the second harmonics for the specific choice of system parameters.

  12. Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

    KAUST Repository

    Qiu, Xuepeng

    2016-11-18

    The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

  13. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    Science.gov (United States)

    Tang, Y.-H.; Chu, F.-C.; Kioussis, Nicholas

    2015-06-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds.

  14. A Novel Sensing Circuit with Large Sensing Margin for Embedded Spin-Transfer Torque MRAMs

    DEFF Research Database (Denmark)

    Bagheriye, Leila; Toofan, Siroos; Saeidi, Roghayeh

    Abstract— Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising candidate for next-generation computing systems. However, with increasing process variation and decreasing supply voltage, a big design challenge of embedded STT-MRAMs is to guarantee negligible read......-disturbance and high yield. In this paper, to deal with the read reliability challenge, a high sensing margin sensing circuit with strong positive feedback is proposed. It improves the sensing margin (SM) by 10.42X/3.3X and a with 1.24X/1.59X lower read energy at iso-sensing time (2ns) in comparison...

  15. Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit torque biasing

    Science.gov (United States)

    Yang, Yumeng; Xu, Yanjun; Xie, Hang; Xu, Baoxi; Wu, Yihong

    2017-07-01

    We demonstrate an ultrathin and semitransparent anisotropic and spin Hall magnetoresistance sensor based on NiFe/Pt heterostructures. The use of a spin-orbit torque effective field for transverse biasing allows us to reduce the total thickness of the sensors down to 3-4 nm, thereby leading to the semitransparency. Despite the extremely simple design, the spin-orbit torque effective field biased NiFe/Pt sensor exhibits levels of linearity and sensitivity comparable to those of sensors using more complex linearization schemes. In a proof-of-concept design using a full Wheatstone bridge comprising four sensing elements, we obtained a sensitivity up to 202.9 mΩ Oe-1, a linearity error below 5%, and a detection limit down to 20 nT. The transmittance of the sensor is over 50% in the visible range.

  16. Spin-Orbit Torques and Anisotropic Magnetization Damping in Skyrmion Crystals

    Science.gov (United States)

    Hals, Kjetil; Brataas, Arne

    2014-03-01

    We theoretically study the effects of reactive and dissipative homogeneous spin-orbit torques and anisotropic damping on the current-driven skyrmion dynamics in cubic chiral magnets. Our results demonstrate that spin-orbit torques play a significant role in the current-induced skyrmion velocity. The dissipative spin-orbit torque generates a relativistic Magnus force on the skyrmions, whereas the reactive spin-orbit torque yields a correction to both the drift velocity along the current direction and the transverse velocity associated with the Magnus force. The spin-orbit torque corrections to the velocity scale linearly with the skyrmion size, which is inversely proportional to the spin-orbit coupling. Consequently, the reactive spin-orbit torque correction can be the same order of magnitude as the non-relativistic contribution. More importantly, the dissipative spin-orbit torque can be the dominant force that causes a deflected motion of the skyrmions if the torque exhibits a linear or quadratic relationship with the spin-orbit coupling. In addition, we demonstrate that the skyrmion velocity is determined by anisotropic magnetization damping parameters governed by the skyrmion size.

  17. Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)

    Science.gov (United States)

    Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles

    2015-09-01

    The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.

  18. Current induced torques and interfacial spin-orbit coupling: Semiclassical modeling

    KAUST Repository

    Haney, Paul M.

    2013-05-07

    In bilayer nanowires consisting of a ferromagnetic layer and a nonmagnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic dynamics appear to require torques that can be separated into two terms, dampinglike and fieldlike. The dampinglike torque is typically derived from models describing the bulk spin Hall effect and the spin transfer torque, and the fieldlike torque is typically derived from a Rashba model describing interfacial spin-orbit coupling. We derive a model based on the Boltzmann equation that unifies these approaches. We also consider an approximation to the Boltzmann equation, the drift-diffusion model, that qualitatively reproduces the behavior, but quantitatively differs in some regimes. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe the experimentally observed thickness dependencies.

  19. Spin-torque ferromagnetic resonance in arbitrarily magnetized thin films

    Science.gov (United States)

    Sklenar, Joseph

    The spin Hall effect (SHE) in non-magnetic metals can be used to generate spin-transfer-torque (STT), subsequently inducing ferromagnetic resonance (FMR) in magnetic thin films; this experimental method is termed spin-torque ferromagnetic resonance (ST-FMR). Most ST-FMR experiments that are reported have an applied magnetic field in the plane of the sample and the research focuses on material combinations that have large and efficient STT. The most common way ST-FMR signals are detected is through an anisotropic magnetoresistance (AMR) rectification process. In this work we will present ST-FMR results in thin films where the magnetization has both an in-plane and out-of-plane component. The arbitrary magnetization direction is achieved by tipping the applied magnetic field out of the sample plane. We find that when the material system is a permalloy/Pt bilayer, ST-FMR signals are not mirror-symmetric upon magnetic field reversal . This is because the combination of both a STT from the bulk SHE and the Oersted field-like torque from the device do not drive the dynamics in the same manner when the field is reversed. We interpret our results in the Py/Pt experiment by extending an already established ST-FMR lineshape model to describe the general case of arbitrarily magnetized films. We compare and contrast our Py/Pt experiment with another system we measured, a Py/MoS2 bilayer. For the Py/MoS2 system, in-plane experiments suggest that a large STT is present and are comparable to what is observed for the more traditional Py/Pt system . On the other hand, the out-of-plane experiment for the Py/MoS2 system is qualitatively very different from Py/Pt. Our results suggest that ST-FMR experiments for arbitrarily magnetized magnetic films are useful in characterizing STT generated from interface rather than bulk effects. Work at Northwestern was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Science and Engineering Division under grant

  20. Spin-orbit torque induced magnetization switching in Co/Pt multilayers

    Science.gov (United States)

    Jinnai, Butsurin; Zhang, Chaoliang; Kurenkov, Aleksandr; Bersweiler, Mathias; Sato, Hideo; Fukami, Shunsuke; Ohno, Hideo

    2017-09-01

    Spin-orbit torque (SOT)-induced magnetization switching in Co/Pt multilayer structures with a Pt buffer layer is studied aiming to realize SOT-magnetic random access memory (MRAM) devices with high thermal stability. Current-induced magnetization switching and effective fields are measured using Hall-bar devices. The switching efficiency, defined as a ratio of the areal anisotropy energy density to switching current density, increases with increasing the number of Co/Pt stacks. This trend is in accordance with the stacking number dependence of effective fields per unit current density. The effective spin-Hall angle of the Pt buffer layer for the sample with multiple Co/Pt stacks is significantly larger than that of Pt previously reported, suggesting a generation of SOT in Co/Pt multilayers. These results indicate that Co/Pt multilayers are promising for SOT-MRAM devices possessing high thermal stability and small switching current.

  1. Spin-orbit torque induced spike-timing dependent plasticity

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Abhronil, E-mail: asengup@purdue.edu; Al Azim, Zubair; Fong, Xuanyao; Roy, Kaushik [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2015-03-02

    Nanoelectronic devices that mimic the functionality of synapses are a crucial requirement for performing cortical simulations of the brain. In this work, we propose a ferromagnet-heavy metal heterostructure that employs spin-orbit torque to implement spike-timing dependent plasticity. The proposed device offers the advantage of decoupled spike transmission and programming current paths, thereby leading to reliable operation during online learning. Possible arrangement of such devices in a crosspoint architecture can pave the way for ultra-dense neural networks. Simulation studies indicate that the device has the potential of achieving pico-Joule level energy consumption (maximum 2 pJ per synaptic event) which is comparable to the energy consumption for synaptic events in biological synapses.

  2. Spin-orbit torque in two-dimensional antiferromagnetic topological insulators

    KAUST Repository

    Ghosh, Sumit

    2017-01-24

    We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.

  3. Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

    Science.gov (United States)

    Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

    2017-12-01

    There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

  4. Effect of resistance feedback on spin torque-induced switching of nanomagnets

    International Nuclear Information System (INIS)

    Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

    2009-01-01

    In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

  5. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian

    2013-06-26

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  6. Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

    KAUST Repository

    Li, Hang

    2016-01-11

    We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

  7. Spin torque nanooscillators: new applications in information processing

    Science.gov (United States)

    Macia, Ferran; Kent, Andrew D.; Hoppensteadt, Frank C.

    2013-03-01

    Nanonometer scale electrical contacts to ferromagnetic thin films (STNOs) can provide sufficient current densities to excite magnetic-moment dynamics resulting in emission of short wave-length spin waves. We discuss several applications of spin-wave patterns created from STNOs and their interaction with background oscillations. We review how to encode information in STNOs signals -modulating their amplitude, frequency or phase - and stability against noise. We first model arrays of STNOs in extended ferromagnetic thin films and define conditions to control spin-waves emission directions. We also study arrays of oscillators in patterned ferromagnetic thin films and we put forward a method to build an STNO lookup tables or an STNO based network analyzer. Using spin waves complements digital semiconductor technologies and offers new possibilities for increased memory capacity and computation performance. This work was supported by Marie Curie IOF 253214 and by ARO MURI Grant No. W911NF-08-1-0317 and NSF Grant No. ECS 07- 25280.

  8. Novel compact model for multi-level spin torque magnetic tunnel junctions

    Science.gov (United States)

    Prajapati, Sanjay; Verma, Shivam; Kulkarni, Anant Aravind; Kaushik, Brajesh Kumar

    2016-10-01

    Spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic tunnel junction (MTJ) devices are emerging as strong contenders for the next generation memories. Conventional STT magneto-resistive random access memory (MRAM) offers lower power, non-volatility and CMOS process compatibility. However, higher current requirement during the write operation leads to tunnel barrier reliability issues and larger access devices. SOT-MRAM eliminates the reliability issues with strong spin polarized current (100%) and separate read/write current paths; however, the additional two access transistors in SOT-MRAM results into increased cell area. Multilevel cell (MLC) structure paves a way to circumvent the problems related to the conventional STT/SOT based MTJ devices and provides enhanced integration density at reduced cost per bit. Conventional STT/SOT-MRAM requires a unit cell area of 10-60 F2 and reported simulations have been based on available single-level MTJ compact models. However, till date no compact model exists that can capture the device physics of MLC-MTJ accurately. Hence, a novel compact model is proposed in this paper to capture the accurate device physics and behaviour of the MLC-MTJs. It is designed for MLCs with different MTJ configurations demonstrated so far, such as series and parallel free layer based MLC-MTJs. The proposed model is coded in Verilog-A, which is compatible with SPICE for circuit level simulations. The model is in close agreement with the experimental results exhibiting an average error of less than 15%.

  9. Research Update: Spin transfer torques in permalloy on monolayer MoS 2

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Sklenar, Joseph; Hsu, Bo; Jiang, Wanjun; Jungfleisch, Matthias B.; Xiao, Jiao; Fradin, Frank Y.; Liu, Yaohua; Pearson, John E.; Ketterson, John B.; Yang, Zheng; Hoffmann, Axel

    2016-03-01

    We observe current induced spin transfer torque resonance in permalloy (Py) grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

  10. Research Update: Spin transfer torques in permalloy on monolayer MoS2

    Directory of Open Access Journals (Sweden)

    Wei Zhang

    2016-03-01

    Full Text Available We observe current induced spin transfer torque resonance in permalloy (Py grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py. The signals are detected via a homodyne voltage from anisotropic magnetoresistance of Py. In comparison to other bilayer systems with strong spin-orbit torques, the monolayer MoS2 cannot provide bulk spin Hall effects and thus indicates the purely interfacial nature of the spin transfer torques. Therefore our results indicate the potential of two-dimensional transition-metal dichalcogenide for the use of interfacial spin-orbitronics applications.

  11. Spin-orbit torque switching without an external field using interlayer exchange coupling

    Science.gov (United States)

    Lau, Yong-Chang; Betto, Davide; Rode, Karsten; Coey, J. M. D.; Stamenov, Plamen

    2016-09-01

    Manipulation of the magnetization of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) in oscillators and switches such as magnetic random-access memory (MRAM) where a high current is passed across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular CoFe free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru or Pt spacer. The preferred magnetic state of the free layer is determined by the current polarity and the sign of the interlayer exchange coupling (IEC). Our strategy offers a potentially scalable solution to realize bias-field-free switching that can lead to a generation of SOT devices, combining a high storage density and endurance with a low power consumption.

  12. Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

    KAUST Repository

    Chshiev, M.

    2015-09-21

    In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

  13. Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

    Science.gov (United States)

    Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

    2011-10-28

    The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

  14. Oscillation characteristics of zero-field spin transfer oscillators with field-like torque

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Yuan-Yuan; Xue, Hai-Bin, E-mail: xuehaibin@tyut.edu.cn [Key Laboratory of Advanced Transducer and Intelligent Control system, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Liu, Zhe-Jie, E-mail: pandanlzj@hotmail.com [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2015-05-15

    We theoretically investigate the influence of the field-like spin torque term on the oscillation characteristics of spin transfer oscillators, which are based on MgO magnetic tunnel junctions (MTJs) consisting of a perpendicular magnetized free layer and an in-plane magnetized pinned layer. It is demonstrated that the field-like torque has a strong impact on the steady-state precession current region and the oscillation frequency. In particular, the steady-state precession can occur at zero applied magnetic field when the ratio between the field-like torque and the spin transfer torque takes up a negative value. In addition, the dependence of the oscillation properties on the junction sizes has also been analyzed. The results indicate that this compact structure of spin transfer oscillator without the applied magnetic field is practicable under certain conditions, and it may be a promising configuration for the new generation of on-chip oscillators.

  15. Oscillation characteristics of zero-field spin transfer oscillators with field-like torque

    Directory of Open Access Journals (Sweden)

    Yuan-Yuan Guo

    2015-05-01

    Full Text Available We theoretically investigate the influence of the field-like spin torque term on the oscillation characteristics of spin transfer oscillators, which are based on MgO magnetic tunnel junctions (MTJs consisting of a perpendicular magnetized free layer and an in-plane magnetized pinned layer. It is demonstrated that the field-like torque has a strong impact on the steady-state precession current region and the oscillation frequency. In particular, the steady-state precession can occur at zero applied magnetic field when the ratio between the field-like torque and the spin transfer torque takes up a negative value. In addition, the dependence of the oscillation properties on the junction sizes has also been analyzed. The results indicate that this compact structure of spin transfer oscillator without the applied magnetic field is practicable under certain conditions, and it may be a promising configuration for the new generation of on-chip oscillators.

  16. Spin-orbit torques in locally and globally noncentrosymmetric crystals: Antiferromagnets and ferromagnets

    KAUST Repository

    Železný, J.

    2017-01-10

    One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný, Phys. Rev. Lett. 113, 157201 (2014)]PRLTAO0031-900710.1103/PhysRevLett.113.157201, the electrical switching of magnetic moments in an antiferromagnet was demonstrated [P. Wadley, Science 351, 587 (2016)]SCIEAS0036-807510.1126/science.aab1031. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a nonequilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally noncentrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.

  17. Theory for a dissipative droplet soliton excited by a spin torque nanocontact

    OpenAIRE

    Hoefer, M. A.; Silva, T. J.; Keller, Mark W.

    2010-01-01

    A novel type of solitary wave is predicted to form in spin torque oscillators when the free layer has a sufficiently large perpendicular anisotropy. In this structure, which is a dissipative version of the conservative droplet soliton originally studied in 1977 by Ivanov and Kosevich, spin torque counteracts the damping that would otherwise destroy the mode. Asymptotic methods are used to derive conditions on perpendicular anisotropy strength and applied current under which a dissipative drop...

  18. Spin-Hall-assisted magnetic random access memory

    International Nuclear Information System (INIS)

    Brink, A. van den; Swagten, H. J. M.; Koopmans, B.; Cosemans, S.; Manfrini, M.; Van Roy, W.; Min, T.; Cornelissen, S.; Vaysset, A.

    2014-01-01

    We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time

  19. Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

    KAUST Repository

    Manchon, Aurelien

    2010-11-15

    The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

  20. Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

    NARCIS (Netherlands)

    Vlietstra, N.; Shan, J.; Castel, V.; Ben Youssef, J.; Bauer, G. E. W.; van Wees, B. J.

    2013-01-01

    The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental

  1. Model for a collimated spin-wave beam generated by a single-layer spin torque nanocontact

    Science.gov (United States)

    Hoefer, M. A.; Silva, T. J.; Stiles, M. D.

    2008-04-01

    A model of spin-torque-induced magnetization dynamics based on semiclassical spin diffusion theory for a single-layer nanocontact is presented. The model incorporates effects due to the current-induced Oersted field and predicts the generation of a variety of spatially dependent, coherent, precessional magnetic wave structures. Directionally controllable collimated spin-wave beams, vortex spiral waves, and localized standing waves are found to be excited by the interplay of the Oersted field and the orientation of an applied field. These fields act as a spin-wave “corral” around the nanocontact that controls the propagation of spin waves in certain directions.

  2. Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field

    Science.gov (United States)

    Munira, Kamaram; Pandey, Sumeet C.; Kula, Witold; Sandhu, Gurtej S.

    2016-11-01

    Voltage-controlled magnetic anisotropy (VCMA) effect has attracted a significant amount of attention in recent years because of its low cell power consumption during the anisotropy modulation of a thin ferromagnetic film. However, the applied voltage or electric field alone is not enough to completely and reliably reverse the magnetization of the free layer of a magnetic random access memory (MRAM) cell from anti-parallel to parallel configuration or vice versa. An additional symmetry-breaking mechanism needs to be employed to ensure the deterministic writing process. Combinations of voltage-controlled magnetic anisotropy together with spin-transfer torque (STT) and with an applied magnetic field (Happ) were evaluated for switching reliability, time taken to switch with low error rate, and energy consumption during the switching process. In order to get a low write error rate in the MRAM cell with VCMA switching mechanism, a spin-transfer torque current or an applied magnetic field comparable to the critical current and field of the free layer is necessary. In the hybrid processes, the VCMA effect lowers the duration during which the higher power hungry secondary mechanism is in place. Therefore, the total energy consumed during the hybrid writing processes, VCMA + STT or VCMA + Happ, is less than the energy consumed during pure spin-transfer torque or applied magnetic field switching.

  3. Spin force and torque in non-relativistic Dirac oscillator on a sphere

    Science.gov (United States)

    Shikakhwa, M. S.

    2018-03-01

    The spin force operator on a non-relativistic Dirac oscillator (in the non-relativistic limit the Dirac oscillator is a spin one-half 3D harmonic oscillator with strong spin-orbit interaction) is derived using the Heisenberg equations of motion and is seen to be formally similar to the force by the electromagnetic field on a moving charged particle. When confined to a sphere of radius R, it is shown that the Hamiltonian of this non-relativistic oscillator can be expressed as a mere kinetic energy operator with an anomalous part. As a result, the power by the spin force and torque operators in this case are seen to vanish. The spin force operator on the sphere is calculated explicitly and its torque is shown to be equal to the rate of change of the kinetic orbital angular momentum operator, again with an anomalous part. This, along with the conservation of the total angular momentum, suggests that the spin force exerts a spin-dependent torque on the kinetic orbital angular momentum operator in order to conserve total angular momentum. The presence of an anomalous spin part in the kinetic orbital angular momentum operator gives rise to an oscillatory behavior similar to the Zitterbewegung. It is suggested that the underlying physics that gives rise to the spin force and the Zitterbewegung is one and the same in NRDO and in systems that manifest spin Hall effect.

  4. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  5. Minimal model of spin-transfer torque and spin pumping caused by the spin Hall Effect

    Czech Academy of Sciences Publication Activity Database

    Chen, W.; Sigrist, M.; Sinova, Jairo; Manske, D.

    2016-01-01

    Roč. 115, č. 21 (2016), 1-5, č. článku 217203. ISSN 0031-9007 Institutional support: RVO:68378271 Keywords : spin tronics * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016

  6. Critical current density for spin transfer torque switching with composite free layer structure

    OpenAIRE

    You, Chun-Yeol

    2009-01-01

    Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the CFL under the spin transfer torque, which is related with critical current density, is obtained by analytic spin wave excitation model and confirmed by macro-spin Landau-Lifshitz-Gilbert equation. The critical current densities for the coupled two identical...

  7. Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

    OpenAIRE

    You, Chun-Yeol

    2012-01-01

    We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

  8. Spin-orbit-torque and magnetic damping in tailored ferromagnetic bilayers

    OpenAIRE

    Lee, DongJoon; Kim, JongHyuk; Park, HeeGyum; Lee, Kyung-Jin; Ju, Byeong-Kwon; Koo, Hyun Cheol; Min, Byoung-Chul; Lee, OukJae

    2018-01-01

    We study spin-orbit-torque-driven ferromagnetic resonance (FMR) in ferromagnetic (FM) bilayers, consisting of Co and permalloy (Py), sandwiched between Pt and MgO layers. We find that the FM layer in contact with the Pt layers dominantly determines that spin Hall angle, which is consistent with the spin-transparency model. By contrast, the FMR linewidths are considerably influenced not only by the spin-pumping effect across the Pt|FM in terface but also by the spin relaxation such as two-magn...

  9. Dirac spin-orbit torques and charge pumping at the surface of topological insulators

    KAUST Repository

    Ndiaye, Papa Birame

    2017-07-07

    We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

  10. Room-temperature spin-orbit torque in NiMnSb

    Science.gov (United States)

    Ciccarelli, C.; Anderson, L.; Tshitoyan, V.; Ferguson, A. J.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Gayles, J.; Železný, J.; Šmejkal, L.; Yuan, Z.; Sinova, J.; Freimuth, F.; Jungwirth, T.

    2016-09-01

    Materials that crystallize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, inversion asymmetries in their crystal structure and relativistic spin-orbit coupling led to discoveries of non-equilibrium spin-polarization phenomena that are now extensively explored as an electrical means for manipulating magnetic moments in a variety of spintronic structures. Current research of these relativistic spin-orbit torques focuses primarily on magnetic transition-metal multilayers. The low-temperature diluted magnetic semiconductor (Ga, Mn)As, in which spin-orbit torques were initially discovered, has so far remained the only example showing the phenomenon among bulk non-centrosymmetric ferromagnets. Here we present a general framework, based on the complete set of crystallographic point groups, for identifying the potential presence and symmetry of spin-orbit torques in non-centrosymmetric crystals. Among the candidate room-temperature ferromagnets we chose to use NiMnSb, which is a member of the broad family of magnetic Heusler compounds. By performing all-electrical ferromagnetic resonance measurements in single-crystal epilayers of NiMnSb we detect room-temperature spin-orbit torques generated by effective fields of the expected symmetry and of a magnitude consistent with our ab initio calculations.

  11. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

    Science.gov (United States)

    Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.

    2018-01-01

    Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .

  12. Transport theory for femtosecond laser-induced spin-transfer torques

    Science.gov (United States)

    Baláž, Pavel; Žonda, Martin; Carva, Karel; Maldonado, Pablo; Oppeneer, Peter M.

    2018-03-01

    Ultrafast demagnetization of magnetic layers pumped by a femtosecond laser pulse is accompanied by a nonthermal spin-polarized current of hot electrons. These spin currents are studied here theoretically in a spin valve with noncollinear magnetizations. To this end, we introduce an extended model of superdiffusive spin transport that enables the treatment of noncollinear magnetic configurations, and apply it to the perpendicular spin valve geometry. We show how spin-transfer torques arise due to this mechanism and calculate their action on the magnetization present, as well as how the latter depends on the thicknesses of the layers and other transport parameters. We demonstrate that there exists a certain optimum thickness of the out-of-plane magnetized spin-current polarizer such that the torque acting on the second magnetic layer is maximal. Moreover, we study the magnetization dynamics excited by the superdiffusive spin-transfer torque due to the flow of hot electrons employing the Landau–Lifshitz–Gilbert equation. Thereby we show that a femtosecond laser pulse applied to one magnetic layer can excite small-angle precessions of the magnetization in the second magnetic layer. We compare our calculations with recent experimental results.

  13. Transport theory for femtosecond laser-induced spin-transfer torques.

    Science.gov (United States)

    Baláž, Pavel; Žonda, Martin; Carva, Karel; Maldonado, Pablo; Oppeneer, Peter M

    2018-03-21

    Ultrafast demagnetization of magnetic layers pumped by a femtosecond laser pulse is accompanied by a nonthermal spin-polarized current of hot electrons. These spin currents are studied here theoretically in a spin valve with noncollinear magnetizations. To this end, we introduce an extended model of superdiffusive spin transport that enables the treatment of noncollinear magnetic configurations, and apply it to the perpendicular spin valve geometry. We show how spin-transfer torques arise due to this mechanism and calculate their action on the magnetization present, as well as how the latter depends on the thicknesses of the layers and other transport parameters. We demonstrate that there exists a certain optimum thickness of the out-of-plane magnetized spin-current polarizer such that the torque acting on the second magnetic layer is maximal. Moreover, we study the magnetization dynamics excited by the superdiffusive spin-transfer torque due to the flow of hot electrons employing the Landau-Lifshitz-Gilbert equation. Thereby we show that a femtosecond laser pulse applied to one magnetic layer can excite small-angle precessions of the magnetization in the second magnetic layer. We compare our calculations with recent experimental results.

  14. Theory for a dissipative droplet soliton excited by a spin torque nanocontact

    Science.gov (United States)

    Hoefer, M. A.; Silva, T. J.; Keller, Mark W.

    2010-08-01

    A distinct type of solitary wave is predicted to form in spin torque oscillators when the free layer has a sufficiently large perpendicular anisotropy. In this structure, which is a dissipative version of the conservative droplet soliton originally studied in 1977 by Ivanov and Kosevich, spin torque counteracts the damping that would otherwise destroy the mode. Asymptotic methods are used to derive conditions on perpendicular anisotropy strength and applied current under which a dissipative droplet can be nucleated and sustained. Numerical methods are used to confirm the stability of the droplet against various perturbations that are likely in experiments, including tilting of the applied field, nonzero spin torque asymmetry, and nontrivial Oersted fields. Under certain conditions, the droplet experiences a drift instability in which it propagates away from the nanocontact and is then destroyed by damping.

  15. Inductive detection of fieldlike and dampinglike ac inverse spin-orbit torques in ferromagnet/normal-metal bilayers

    Science.gov (United States)

    Berger, Andrew J.; Edwards, Eric R. J.; Nembach, Hans T.; Karenowska, Alexy D.; Weiler, Mathias; Silva, Thomas J.

    2018-03-01

    Functional spintronic devices rely on spin-charge interconversion effects, such as the reciprocal processes of electric field-driven spin torque and magnetization dynamics-driven spin and charge flow. Both dampinglike and fieldlike spin-orbit torques have been observed in the forward process of current-driven spin torque and dampinglike inverse spin-orbit torque has been well studied via spin pumping into heavy metal layers. Here, we demonstrate that established microwave transmission spectroscopy of ferromagnet/normal metal bilayers under ferromagnetic resonance can be used to inductively detect the ac charge currents driven by the inverse spin-charge conversion processes. This technique relies on vector network analyzer ferromagnetic resonance (VNA-FMR) measurements. We show that in addition to the commonly extracted spectroscopic information, VNA-FMR measurements can be used to quantify the magnitude and phase of all ac charge currents in the sample, including those due to spin pumping and spin-charge conversion. Our findings reveal that Ni80Fe20/Pt bilayers exhibit both dampinglike and fieldlike inverse spin-orbit torques. While the magnitudes of both the dampinglike and fieldlike inverse spin-orbit torque are of comparable scale to prior reported values for similar material systems, we observed a significant dependence of the dampinglike magnitude on the order of deposition. This suggests interface quality plays an important role in the overall strength of the dampinglike spin-to-charge conversion.

  16. Synchronization of propagating spin-wave modes in a double-contact spin-torque oscillator: A micromagnetic study

    International Nuclear Information System (INIS)

    Puliafito, V.; Consolo, G.; Lopez-Diaz, L.; Azzerboni, B.

    2014-01-01

    This work tackles theoretical investigations on the synchronization of spin-wave modes generated by spin-transfer-torque in a double nano-contact geometry. The interaction mechanisms between the resulting oscillators are analyzed in the case of propagating modes which are excited via a normal-to-plane magnetic bias field. To characterize the underlying physical mechanisms, a multi-domain analysis is performed. It makes use of an equivalent electrical circuit, to deduce the output electrical power, and of micromagnetic simulations, through which information on the frequency spectra and on the spatial distribution of the wavefront of the emitted spin-waves is extracted. This study provides further and intriguing insights into the physical mechanisms giving rise to synchronization of spin-torque oscillators

  17. Macro-spin modeling and experimental study of spin-orbit torque biased magnetic sensors

    Science.gov (United States)

    Xu, Yanjun; Yang, Yumeng; Luo, Ziyan; Xu, Baoxi; Wu, Yihong

    2017-11-01

    We reported a systematic study of spin-orbit torque biased magnetic sensors based on NiFe/Pt bilayers through both macro-spin modeling and experiments. The simulation results show that it is possible to achieve a linear sensor with a dynamic range of 0.1-10 Oe, power consumption of 1 μW-1mW, and sensitivity of 0.1-0.5 Ω/Oe. These characteristics can be controlled by varying the sensor dimension and current density in the Pt layer. The latter is in the range of 1 × 105-107 A/cm2. Experimental results of fabricated sensors with selected sizes agree well with the simulation results. For a Wheatstone bridge sensor comprising of four sensing elements, a sensitivity up to 0.548 Ω/Oe, linearity error below 6%, and detectivity of about 2.8 nT/√Hz were obtained. The simple structure and ultrathin thickness greatly facilitate the integration of these sensors for on-chip applications. As a proof-of-concept experiment, we demonstrate its application in detection of current flowing in an on-chip Cu wire.

  18. Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces

    OpenAIRE

    Pai, Chi-Feng; Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

    2014-01-01

    We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a damping-like spin torque on the FM ranges from 0.10 under different interfacial conditions. We also show that the temperature...

  19. Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions

    Science.gov (United States)

    Heindl, R.; Rippard, W. H.; Russek, S. E.; Kos, A. B.

    2011-02-01

    We have investigated the physical limitations to efficient high-speed spin-torque switching by means of write error rates both experimentally as well as through macrospin simulations. The spin-torque-induced write operations were performed on in-plane MgO magnetic tunnel junctions. The write error rates were determined from up to 106 switching events as a function of pulse amplitude and duration (5 to 100 ns) for devices with different thermal stability factors. Both experiments and simulations show qualitatively similar results. In particular, the write error rates as a function of pulse voltage amplitude increase at higher rates for pulse durations below ≈50 ns. Simulations show that the write error rates can be reduced only to some extent by the use of materials with perpendicular anisotropy and reduced damping, whereas noncollinear orientation of the spin current polarization and the magnetic easy axis increases the write error rates. The cause for the write error rates is related to the underlying physics of spin-torque switching and the occurrence of the stagnation point on the magnetization switching trajectory where the spin-torque disappears and the device loses the energy needed to switch. The stagnation point can be accessed either during the initial magnetization distribution or by thermal diffusion during the switching process.

  20. Giant spin-torque diode sensitivity in the absence of bias magnetic field

    Science.gov (United States)

    Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

    2016-01-01

    Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

  1. Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

    Science.gov (United States)

    Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

    2015-10-01

    Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

  2. Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes.

    Science.gov (United States)

    Ma, X; Fang, F; Li, Q; Zhu, J; Yang, Y; Wu, Y Z; Zhao, H B; Lüpke, G

    2015-10-28

    Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

  3. Simulation of stress-modulated magnetization precession frequency in Heusler-based spin torque oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Houbing, E-mail: hbhuang@ustb.edu.cn; Zhao, Congpeng; Ma, Xingqiao, E-mail: xqma@sas.ustb.edu.cn

    2017-03-15

    We investigated stress-modulated magnetization precession frequency in Heusler-based spin transfer torque oscillator by combining micromagnetic simulations with phase field microelasticity theory, by encapsulating the magnetic tunnel junction into multilayers structures. We proposed a novel method of using an external stress to control the magnetization precession in spin torque oscillator instead of an external magnetic field. The stress-modulated magnetization precession frequency can be linearly modulated by externally applied uniaxial in-plane stress, with a tunable range 4.4–7.0 GHz under the stress of 10 MPa. By comparison, the out-of-plane stress imposes negligible influence on the precession frequency due to the large out-of-plane demagnetization field. The results offer new inspiration to the design of spin torque oscillator devices that simultaneously process high frequency, narrow output band, and tunable over a wide range of frequencies via external stress. - Highlights: • We proposed stress-modulated magnetization precession in spin torque oscillator. • The magnetization precession frequency can be linearly modulated by in-plane stress. • The stress also can widen the magnetization frequency range 4.4–7.0 GHz. • The stress-modulated oscillation frequency can simplify STO devices.

  4. Spin-transfer torques in antiferromagnetic textures: efficiency and quantification method

    Czech Academy of Sciences Publication Activity Database

    Yamane, Y.; Ieda, J.; Sinova, Jairo

    2016-01-01

    Roč. 94, č. 5 (2016), 1-8, č. článku 054409. ISSN 2469-9950 R&D Projects: GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spin-transfer torques * antiferromagnets Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.836, year: 2016

  5. Strain engineered magnetic tunnel junctions and spin-orbit torque switching (Conference Presentation)

    Science.gov (United States)

    Wu, Yang; Narayanapillai, Kulothungasagaran; Elyasi, Mehrdad; Qiu, Xuepeng; Yang, Hyunsoo

    2016-10-01

    The efficient generation of pure spin currents and manipulation of the magnetization dynamics of magnetic structures is of central importance in the field of spintronics. The spin-orbit effect is one of the promising ways to generate spin currents, in which a charge current can be converted to a transverse spin current due to the spin-orbit interaction. We investigate the spin dynamics in the presence of strong spin-orbit coupling materials such as LaAlO3/SrTiO3 oxide heterostructures. Angle dependent magnetoresistance measurements are employed to detect and understand the current-induced spin-orbit torques, and an effective field of 2.35 T is observed for a dc-current of 200 uA. In order to understand the interaction between light and spin currents, we use a femtosecond laser to excite an ultrafast transient spin current and subsequent terahertz (THz) emission in nonmagnet (NM)/ferromagnet (FM)/oxide heterostructures. The THz emission strongly relies on spin-orbit interaction, and is tailored by the magnitude and sign of the effective spin Hall angle of the NM. Our results can be utilized for ultrafast spintronic devices and tunable THz sources.

  6. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

    KAUST Repository

    Manchon, Aurelien

    2018-01-29

    Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.

  7. Field-free deterministic ultrafast creation of magnetic skyrmions by spin-orbit torques

    Science.gov (United States)

    Büttner, Felix; Lemesh, Ivan; Schneider, Michael; Pfau, Bastian; Günther, Christian M.; Hessing, Piet; Geilhufe, Jan; Caretta, Lucas; Engel, Dieter; Krüger, Benjamin; Viefhaus, Jens; Eisebitt, Stefan; Beach, Geoffrey S. D.

    2017-11-01

    Magnetic skyrmions are stabilized by a combination of external magnetic fields, stray field energies, higher-order exchange interactions and the Dzyaloshinskii-Moriya interaction (DMI). The last favours homochiral skyrmions, whose motion is driven by spin-orbit torques and is deterministic, which makes systems with a large DMI relevant for applications. Asymmetric multilayers of non-magnetic heavy metals with strong spin-orbit interactions and transition-metal ferromagnetic layers provide a large and tunable DMI. Also, the non-magnetic heavy metal layer can inject a vertical spin current with transverse spin polarization into the ferromagnetic layer via the spin Hall effect. This leads to torques that can be used to switch the magnetization completely in out-of-plane magnetized ferromagnetic elements, but the switching is deterministic only in the presence of a symmetry-breaking in-plane field. Although spin-orbit torques led to domain nucleation in continuous films and to stochastic nucleation of skyrmions in magnetic tracks, no practical means to create individual skyrmions controllably in an integrated device design at a selected position has been reported yet. Here we demonstrate that sub-nanosecond spin-orbit torque pulses can generate single skyrmions at custom-defined positions in a magnetic racetrack deterministically using the same current path as used for the shifting operation. The effect of the DMI implies that no external in-plane magnetic fields are needed for this aim. This implementation exploits a defect, such as a constriction in the magnetic track, that can serve as a skyrmion generator. The concept is applicable to any track geometry, including three-dimensional designs.

  8. Giant Spin Hall Effect and Switching Induced by Spin-Transfer Torque in a W /Co40Fe40B20/MgO Structure with Perpendicular Magnetic Anisotropy

    Science.gov (United States)

    Hao, Qiang; Xiao, Gang

    2015-03-01

    We obtain robust perpendicular magnetic anisotropy in a β -W /Co40Fe40B20/MgO structure without the need of any insertion layer between W and Co40Fe40B20 . This is achieved within a broad range of W thicknesses (3.0-9.0 nm), using a simple fabrication technique. We determine the spin Hall angle (0.40) and spin-diffusion length for the bulk β form of tungsten with a large spin-orbit coupling. As a result of the giant spin Hall effect in β -W and careful magnetic annealing, we significantly reduce the critical current density for the spin-transfer-torque-induced magnetic switching in Co40Fe40B20 . The elemental β -W is a superior candidate for magnetic memory and spin-logic applications.

  9. Dynamic viscoelasticity measurement under alternative torque using electromagnetically spinning method with quadruple electromagnets.

    Science.gov (United States)

    Matsuura, Yusuke; Hirano, Taichi; Sakai, Keiji

    2017-07-01

    In this study, we developed a novel type of rheological measurement system. Here, a spherical probe is driven to rotate periodically by applying torques using quadruple electromagnets in a noncontact manner. Moreover, this system is an enhancement of our electromagnetically spinning (EMS) viscometer, which is widely used for measuring rheological flow curves in various industrial fields. The quadruple EMS method provides the frequency spectrum of viscoelasticity, in addition to shear viscosity, in a steady flow by switching the operation modes of the driving torque. We show the results obtained for Newtonian fluids and viscoelastic materials and demonstrate the validity of the system.

  10. Spin-torque switching and control using chirped AC currents

    Science.gov (United States)

    Klughertz, Guillaume; Friedland, Lazar; Hervieux, Paul-Antoine; Manfredi, Giovanni

    2017-10-01

    We propose to use oscillating spin currents with slowly varying frequency (chirp) to manipulate and control the magnetization dynamics in a nanomagnet. By recasting the Landau-Lifshitz-Slonczewski equation in a quantum-like two-level formalism, we show that a chirped spin current polarized in the direction normal to the anisotropy axis can induce a stable precession of the magnetic moment at any angle (up to 90^\\circ ) with respect to the anisotropy axis. The drive current can be modest (10^6~A~cm-2 or lower) provided the chirp rate is sufficiently slow. The induced precession is stable against thermal noise, even for small nano-objects at room temperature. Complete reversal of the magnetization can be achieved by adding a small external magnetic field antiparallel to the easy axis. Alternatively, a combination of chirped ac and dc currents with different polarization directions can also be used to trigger the reversal.

  11. Theory of mode coupling in spin torque oscillators coupled to a thermal bath of magnons

    Science.gov (United States)

    Zhou, Yan; Zhang, Shulei; Li, Dong; Heinonen, Olle

    Recently, numerous experimental investigations have shown that the dynamics of a single spin torque oscillator (STO) exhibits complex behavior stemming from interactions between two or more modes of the oscillator. Examples are the observed mode-hopping and mode coexistence. There has been some initial work indicating how the theory for a single-mode (macro-spin) spin torque oscillator should be generalized to include several modes and the interactions between them. In this work, we rigorously derive such a theory starting with the generalized Landau-Lifshitz-Gilbert equation in the presence of the current-driven spin transfer torques. We will first show, in general, that how a linear mode coupling would arise through the coupling of the system to a thermal bath of magnons, which implies that the manifold of orbits and fixed points may shift with temperature. We then apply our theory to two experimentally interesting systems: 1) a STO patterned into nano-pillar with circular or elliptical cross-sections and 2) a nano-contact STO. For both cases, we found that in order to get mode coupling, it would be necessary to have either a finite in-plane component of the external field or an Oersted field. We will also discuss the temperature dependence of the linear mode coupling. Y. Zhou acknowledges the support by the Seed Funding Program for Basic Research from the University of Hong Kong, and University Grants Committee of Hong Kong (Contract No. AoE/P-04/08).

  12. Role of spin-transfer torques on synchronization and resonance phenomena in stochastic magnetic oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Accioly, Artur [Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre (Brazil); Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Locatelli, Nicolas; Querlioz, Damien; Kim, Joo-Von [Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Mizrahi, Alice [Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Unité Mixte de Physique CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, F91767 Palaiseau (France); Pereira, Luis G. [Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970 Porto Alegre (Brazil); Grollier, Julie [Unité Mixte de Physique CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, F91767 Palaiseau (France)

    2016-09-07

    A theoretical study on how synchronization and resonance-like phenomena in superparamagnetic tunnel junctions can be driven by spin-transfer torques is presented. We examine the magnetization of a superparamagnetic free layer that reverses randomly between two well-defined orientations due to thermal fluctuations, acting as a stochastic oscillator. When subject to an external ac forcing, this system can present stochastic resonance and noise-enhanced synchronization. We focus on the roles of the mutually perpendicular damping-like and field-like torques, showing that the response of the system is very different at low and high frequencies. We also demonstrate that the field-like torque can increase the efficiency of the current-driven forcing, especially at sub-threshold electric currents. These results can be useful for possible low-power, more energy efficient applications.

  13. Spin transfer torque switching in exchange-coupled amorphous GdFeCo/TbFe bilayers for thermally assisted MRAM application

    Science.gov (United States)

    Dai, Bing; Guo, Yong; Zhu, Jiaqi; Kato, Takeshi; Iwata, Satoshi; Tsunashima, Shigeru; Yang, Lei; Han, Jiecai

    2017-04-01

    Exchange-coupled amorphous GdFeCo/TbFe memory layers in giant magneto-resistance (GMR) devices for spin transfer torque (STT) switching have been studied, and temperature dependence of the critical current density of the GMR devices was measured to discuss the effect of exchange-coupled bilayers as a memory layer of the thermally assisted magnetic random access memory (MRAM). The GMR devices having amorphous GdFeCo and TbFe memory bilayers with various thicknesses were prepared by magnetron sputtering and subsequent micro-fabrication processes. A pulsed current was applied to the GMR devices in order to investigate the spin transfer torque (STT) switching. The maximum magneto-resistance (MR) ratio was around 0.15%, and the coercivity of the memory bilayer increased with the TbFe thickness and decreased with elevating temperature. The critical current densities J c to switch the memory bilayer with structure of Gd21.4 (Fe90Co10)78.6(9 nm)/Tb16Fe84 (1 nm) as low as 2.2  ×  107 A cm-2 was obtained. The J c reduced with increasing the temperature and was found to scale with the effective anisotropy K eff of GdFeCo/TbFe bilayer, which is believed to be suitable for the application of thermally assisted STT-MRAM.

  14. Spin-torque diode radio-frequency detector with voltage tuned resonance

    Energy Technology Data Exchange (ETDEWEB)

    Skowroński, Witold, E-mail: skowron@agh.edu.pl; Frankowski, Marek; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Wrona, Jerzy [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Singulus Technologies, Kahl am Main 63796 (Germany); Ogrodnik, Piotr [Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland); Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-08-18

    We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

  15. Spin-torque oscillation in large size nano-magnet with perpendicular magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Linqiang, E-mail: LL6UK@virginia.edu [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Kabir, Mehdi [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Dao, Nam; Kittiwatanakul, Salinporn [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Cyberey, Michael [Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, Charlottesville, VA 22904 (United States); Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Institute of Defense Analyses, Alexandria, VA 22311 (United States); Stan, Mircea [Department of Electrical & Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States); Lu, Jiwei [Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA 22904 (United States)

    2017-06-15

    Highlights: • 500 nm size nano-pillar device was fabricated by photolithography techniques. • A magnetic hybrid structure was achieved with perpendicular magnetic fields. • Spin torque switching and oscillation was demonstrated in the large sized device. • Micromagnetic simulations accurately reproduced the experimental results. • Simulations demonstrated the synchronization of magnetic inhomogeneities. - Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co{sub 90}Fe{sub 10}/Cu/Ni{sub 80}Fe{sub 20} pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co{sub 90}Fe{sub 10}) and free layer (Ni{sub 80}Fe{sub 20}) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. A magnetic hybrid structure was achieved for the study of spin torque oscillation by applying a perpendicular field >3 kOe. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogeneities in large sized device. The ability to manipulate spin-dynamics on large size devices could be proved useful for increasing the output power of the spin-transfer nano-oscillators (STNOs).

  16. Spin-transfer torque induced dynamics of magnetic vortices in nanopillars

    International Nuclear Information System (INIS)

    Sluka, Volker

    2011-01-01

    The subject of this work are lithographically defined cylindrical nanopillars containing a stack of two Iron disks separated by a nonmagnetic spacer. The dimensions of the ferromagnetic disks are chosen such that at low magnetic fields, the so-called magnetic vortex is stabilized. In zero field, the magnetization of these objects is basically parallel to the disk plane and circulates the disk center. In doing so, the build-up of large in-plane stray fields is avoided. At the center of this distribution however, exchange forces turn the magnetization out of the disk plane, resulting in the formation of what is referred to as the vortex core. Magnetic vortices have attracted much attention in recent years. This interest is in large parts due to the highly interesting dynamic properties of these structures. In this work the static and dynamic properties of magnetic vortices and their behavior under the influence of spin-transfer torque are investigated. This is achieved by measuring the static and time dependent magnetoresistance under the influence of external magnetic fields. The samples allow the formation of a large variety of states. First, the focus is set on configurations, where one disk is in a vortex state while the other one is homogeneously magnetized. It is shown that spin-transfer torque excites the vortex gyrotropic mode in this configuration. The dependence of the mode frequency on the magnetic field is analyzed. The measurements show that as the vortex center of gyration shifts through the disk under the action of the magnetic field, the effective potential in which it is moving undergoes a change in shape. This shape change is reflected in a V-shaped field dependence of the gyration frequency. Analytical calculations are performed to investigate the effect of the asymmetry of the spin-transfer torque efficiency function on the vortex dynamics. It is shown that by means of asymmetry, spin-transfer torque can transfer energy to a gyrating vortex even

  17. Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

    Science.gov (United States)

    Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

    2018-02-01

    We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

  18. Steady motion of skyrmions and domains walls under diffusive spin torques

    KAUST Repository

    Elías, Ricardo Gabriel

    2017-03-09

    We explore the role of the spin diffusion of conducting electrons in two-dimensional magnetic textures (domain walls and skyrmions) with spatial variation of the order of the spin precession length λex. The effect of diffusion reflects in four additional torques that are third order in spatial derivatives of magnetization and bilinear in λex and in the nonadiabatic parameter β′. In order to study the dynamics of the solitons when these diffusive torques are present, we derive the Thiele equation in the limit of steady motion and we compare the results with the nondiffusive limit. When considering a homogenous current these torques increase the longitudinal velocity of transverse domain walls of width Δ by a factor (λex/Δ)2(α/3), α being the magnetic damping constant. In the case of single skyrmions with core radius r0 these new contributions tend to increase the Magnus effect in an amount proportional to (λex/r0)2(1+2αβ′).

  19. Bias dependence of spin transfer torque in Co2MnSi Heusler alloy based magnetic tunnel junctions

    Science.gov (United States)

    Zhang, Jie; Phung, Timothy; Pushp, Aakash; Ferrante, Yari; Jeong, Jaewoo; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Jiang, Yong; Parkin, Stuart S. P.

    2017-04-01

    Heusler compounds are of interest as electrode materials for use in magnetic tunnel junctions (MTJs) due to their half metallic character, which leads to 100% spin polarization and high tunneling magnetoresistance. Most work to date has focused on the improvements to tunneling magnetoresistance that can stem from the use of Heusler electrodes, while there is much less work investigating the influence of Heusler electrodes on the spin transfer torque properties of MTJs. Here, we investigate the bias dependence of the anti-damping like and field-like spin transfer torque components in both symmetric (Co2MnSi/MgO/Co2MnSi) and asymmetric (Co2MnSi/MgO/CoFe) structure Heusler based MTJs using spin transfer torque ferromagnetic resonance. We find that while the damping like torque is linear with respect to bias for both MTJ structures, the asymmetric MTJ structure has an additional linear component to the ordinarily quadratic field like torque bias dependence and that these results can be accounted for by a free electron tunneling model. Furthermore, our results suggest that the low damping and low saturation magnetization properties of Heusler alloys are more likely to lead significant improvements to spin torque switching efficiency rather than their half metallic character.

  20. High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque

    Energy Technology Data Exchange (ETDEWEB)

    Evelt, M.; Demidov, V. E., E-mail: demidov@uni-muenster.de [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); Bessonov, V. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Demokritov, S. O. [Institute for Applied Physics and Center for Nanotechnology, University of Muenster, 48149 Muenster (Germany); M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg 620041 (Russian Federation); Prieto, J. L. [Instituto de Sistemas Optoelectrónicos y Microtecnologa (UPM), Ciudad Universitaria, Madrid 28040 (Spain); Muñoz, M. [IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), PTM, E-28760 Tres Cantos, Madrid (Spain); Ben Youssef, J. [Laboratoire de Magnétisme de Bretagne CNRS, Université de Bretagne Occidentale, 29285 Brest (France); Naletov, V. V. [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Institute of Physics, Kazan Federal University, Kazan 420008 (Russian Federation); Loubens, G. de [Service de Physique de l' État Condensé, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette (France); Klein, O. [INAC-SPINTEC, CEA/CNRS and Univ. Grenoble Alpes, 38000 Grenoble (France); Collet, M.; Garcia-Hernandez, K.; Bortolotti, P.; Cros, V.; Anane, A. [Unité Mixte de Physique CNRS, Thales, Univ. Paris Sud, Université Paris-Saclay, 91767 Palaiseau (France)

    2016-04-25

    We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by the nonlinear scattering of the coherent spin waves from current-induced excitations.

  1. Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

    International Nuclear Information System (INIS)

    Siracusano, G.; Puliafito, V.; Giordano, A.; Azzerboni, B.; Finocchio, G.; Tomasello, R.; La Corte, A.; Carpentieri, M.

    2015-01-01

    This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications

  2. Analytic expression of the temperature increment in a spin transfer torque nanopillar structure

    International Nuclear Information System (INIS)

    You, Chun-Yeol; Ha, Seung-Seok; Lee, Hyun-Woo

    2009-01-01

    The temperature increment due to the Joule heating in a nanopillar spin transfer torque system is investigated. We obtain a time-dependent analytic solution of the heat conduction equation in nanopillar geometry by using the Green's function method after some simplifications of the problem. While Holm's equation is applicable only to steady states in metallic systems, our solution describes the time dependence and is also applicable to a nanopillar-shaped magnetic tunneling junction with an insulator barrier layer. The validity of the analytic solution is confirmed by numerical finite element method simulations and by the comparison with Holm's equation.

  3. Decoherence and mode hopping in a magnetic tunnel junction based spin torque oscillator.

    Science.gov (United States)

    Muduli, P K; Heinonen, O G; Akerman, Johan

    2012-05-18

    We discuss the coherence of magnetic oscillations in a magnetic tunnel junction based spin torque oscillator as a function of the external field angle. Time-frequency analysis shows mode hopping between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode hopping observed in semiconductor ring lasers. These couplings and, therefore, mode hopping are minimized near the current threshold for the antiparallel alignment of free-layer with reference layer magnetization. Away from the antiparallel alignment, mode hopping limits oscillator coherence.

  4. Phase locking of vortex-based spin-torque nanocontact oscillators by antivortices

    Science.gov (United States)

    Zaspel, C. E.

    2013-02-01

    Magnetic vortices formed at a nanocontact undergo gyrotropic oscillations when driven by a spin-torque providing potential applications as microwave nano-oscillators; however, to increase the power output it is necessary to use an array of synchronized oscillators. Here a theory is developed for two nanocontact oscillators that are interacting through an intermediate antivortex. The confining potential for the two vortices formed at each nanocontact as well as the antivortex is the Oersted-Ampere field about each nanocontact. Solution of the Thiele equation for this system indicates that the nanocontact vortex oscillators will be phase locked over a wide range of nanocontact currents.

  5. Critical current density of domain wall oscillation due to spin-transfer torque

    Energy Technology Data Exchange (ETDEWEB)

    Taniguchi, T; Imamura, H, E-mail: tomohiro-taniguchi@aist.go.jp, E-mail: h-imamura@aist.go.jp [Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-04-01

    The domain wall oscillation due to spin-transfer torque was studied by numerically solving the Landau-Lifshitz-Gilbert (LLG) equation. For a domain wall whose rotation angle {theta}{sub max} is less than 180{sup 0}, we found the existence of the critical current density above which the magnetization dynamics are induced. We studied the dependence of the critical current density on the rotation angle {theta}{sub max} and found that the critical current density is proportional to 180{sup 0} - {theta}{sub max}.

  6. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit

    2017-11-29

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  7. Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit

    2018-04-02

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

  8. Electric-field assisted spin torque nano-oscillator and binary frequency shift keying modulation

    Science.gov (United States)

    Zhang, Xiangli; Chen, Hao-Hsuan; Zhang, Zongzhi; Liu, Yaowen

    2018-04-01

    Electric-controlled magnetization precession introduces technologically relevant possibility for developing spin torque nano-oscillators (STNO) with potential applications in microwave emission. Using the perpendicularly magnetized magnetic tunnel junction (MTJ), we show that the magnetization oscillation frequency can be tuned by the co-action of electric field and spin polarized current. The dynamical phase diagram of MTJ-based STNO is analytically predicted through coordinate transformation from the laboratory frame to the rotation frame, by which the nonstationary out-of-plane magnetization precession process is therefore transformed into the stationary process in the rotation frame. Furthermore, using this STNO as a microwave source, we numerically demonstrate that the bit signal can be transmitted by a binary frequency shift keying (BFSK) modulation technique. The BFSK scheme shows good modulation features with no transient state.

  9. Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal

    Science.gov (United States)

    Duttagupta, S.; Fukami, S.; Zhang, C.; Sato, H.; Yamanouchi, M.; Matsukura, F.; Ohno, H.

    2016-04-01

    The dynamics of elastic interfaces is a general field of interest in statistical physics, where magnetic domain wall has served as a prototypical example. Domain wall `creep’ under the action of sub-threshold driving forces with thermal activation is known to be described by a scaling law with a certain universality class, which represents the mechanism of the interaction of domain walls with the applied forces over the disorder of the system. Here we show different universality classes depending on the driving forces, magnetic field or spin-polarized current, in a metallic system, which have hitherto been seen only in a magnetic semiconductor. We reveal that an adiabatic spin-transfer torque plays a major role in determining the universality class of current-induced creep, which does not depend on the intricacies of material disorder. Our results shed light on the physics of the creep motion of domain walls and other elastic systems.

  10. The magnetization dynamics of nano-contact spin-torque vortex oscillators

    Science.gov (United States)

    Keatley, Paul

    The operation of nano-contact (NC) spin-torque vortex oscillators (STVOs) is underpinned by vortex gyration in response to spin-torque delivered by high density current passing through the magnetic layers of a spin valve. Gyration directly beneath the NC yields radio frequency (RF) emission through the giant magnetoresistance (GMR) effect, which can be readily detected electronically. The magnetization dynamics that extend beyond the NC perimeter contribute little to the GMR signal, but are crucial for synchronization of multiple NC-STVOs that share the same spin valve film. In this work time-resolved scanning Kerr microscopy (TRSKM) was used to directly image the extended dynamics of STVOs phase-locked to an injected RF current. In this talk the dynamics of single 250-nm diameter NCs, and a pair of 100-nm diameter NCs, will be presented. In general the Kerr images reveal well-defined localized and far-field dynamics, driven by spin-torque and RF current Oersted fields respectively. The RF frequency, RF Oersted field, direction of an in-plane magnetic field, and equilibrium magnetic state, all influenced the spatial character of the dynamics observed in single NCs. In the pair of NCs, two modes were observed in the RF emission. Kerr images revealed that a vortex was formed beneath each NC and that the mode with enhanced spectral amplitude and line quality appeared to be correlated with two localized regions oscillating with similar amplitude and phase, while a second weaker mode exhibited amplitude and phase differences. This suggests that the RF emission was generated by collective modes of vortex gyration dynamically coupled via magnetization dynamics and dipolar interactions of the shared magnetic layers. Within the constraints of injection locking, this work demonstrates that TRSKM can provide valuable insight into the spatial character and time-evolution of magnetization dynamics generated by NC-STVOs and the conditions that may favor their synchronization

  11. Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

    Science.gov (United States)

    Wu, Mingzhong

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

  12. Spin-orbit torques for current parallel and perpendicular to a domain wall

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Tomek; Lee, Kyujoon; Karnad, Gurucharan V. [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Alejos, Oscar [Departamento de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belen, 7, E-47011 Valladolid (Spain); Martinez, Eduardo; Moretti, Simone [Departamento Fisica Aplicada, Universidad de Salamanca, Plaza de los Caidos s/n, E-38008 Salamanca (Spain); Hals, Kjetil M. D. [Niels Bohr International Academy and the Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Garcia, Karin; Ravelosona, Dafiné [Institut d' Electronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay Cedex (France); Vila, Laurent [Institut Nanosciences et Cryogénie, Université Grenoble Alpes, F-38000 Grenoble (France); Institut Nanosciences et Cryogénie, CEA, F-38000 Grenoble (France); Lo Conte, Roberto; Kläui, Mathias [Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudinger Weg 7, 55128 Mainz (Germany); Graduate School of Excellence “Materials Science in Mainz” (MAINZ), Staudinger Weg 9, 55128 Mainz (Germany); Ocker, Berthold [Singulus Technologies AG, 63796 Kahl am Main (Germany); Brataas, Arne [Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway)

    2015-09-21

    We report field- and current-induced domain wall (DW) depinning experiments in Ta\\Co{sub 20}Fe{sub 60}B{sub 20}\\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites.

  13. Asymmetric and partial injection locking of a three-terminal spin-torque oscillator

    Science.gov (United States)

    Jué, Emilie; Pufall, Matthew R.; Rippard, William H.

    2018-03-01

    We measure the injection locking of a three-terminal spin-torque oscillator (STO) excited by spin-orbit torque. The device consists of a magnetic tunnel junction on top of a Pt wire. A DC and an AC current are applied through the Pt wire to induce the oscillations and injection lock the STO, respectively. The injection locking is studied at fMW ≈ f0 or at fMW ≈ 2f0, where fMW is the microwave frequency and f0 is the free running frequency of the STO. The frequency response is qualitatively different from the injection locking in STOs generally reported experimentally and theoretically. Whereas typical phase-locking behavior is observed at fMW ≈ 2f0, the injection locking at fMW ≈ f0 is only partial and exhibits a strongly asymmetric frequency response. Defining the frequency deviation range as the frequency range where the STO differs from its free running frequency, we show that the asymmetric interaction is characterized by a pulling effect present on only one side of the frequency deviation range, the presence of a sideband inside the frequency deviation range, and an interaction of the STO with the microwave current that is wider than the frequency deviation range.

  14. Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

    International Nuclear Information System (INIS)

    Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

    2016-01-01

    We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

  15. Non-stationary excitation of two localized spin-wave modes in a nano-contact spin torque oscillator

    Science.gov (United States)

    Consolo, G.; Finocchio, G.; Siracusano, G.; Bonetti, S.; Eklund, A.; Åkerman, J.; Azzerboni, B.

    2013-10-01

    We measure and simulate micromagnetically a framework based upon a nano-contact spin torque oscillator where two distinct localized evanescent spin-wave modes can be detected. The resulting frequency spectrum is composed by two peaks, corresponding to the excited modes, which lie below the ferromagnetic resonance frequency, and a low-frequency tail, which we attribute to the non-stationary switching between these modes. By using Fourier, wavelet, and Hilbert-Huang transforms, we investigate the properties of these modes in time and spatial domains, together with their spatial distribution. The existence of an additional localized mode (which was neither predicted by theory nor by previous numerical and experimental findings) has to be attributed to the large influence of the current-induced Oersted field strength which, in the present setup, is of the same order of magnitude as the external field. As a further consequence, the excited spin-waves, contrarily to what usually assumed, do not possess cylindrical symmetry: the Oersted field induces these modes to be excited at the two opposite sides of the region beneath the nano-contact.

  16. Episodic Spin-up and Spin-down Torque on Earth

    Science.gov (United States)

    Slabinski, Victor J.; Mendonca, Antonio A.

    2018-04-01

    Variations in Earth rotation angle are traditionally expressed by the time difference (ΔT=TT-UT1) between Terrestrial Time (TT) as told by atomic clocks and Universal Time UT1, the time variable used by the Earth-rotation formula. A plot of ΔT versus TT over the past 160 years shows a continuous curve with approximate straight-line segments with different spans of order ~20 years. Removing the tidal and seasonal variations from the data gives these line segments which represent the “decadal variations” in Earth rotation.The slope of a straight-line segment is proportional to the departure of Earth rotation rate from a reference value at the time. The change in slope over the relatively short time between segments indicates an episodic spin-up or spin-down in Earth rotation. The daily combination of VLBI, SLR, and other modern data available since 1973 gives us accurate, daily values of ΔT and the corresponding LOD (Length Of Day) values during these episodes. These allow us to determine the rotational acceleration occurring then.The three largest spin-speed changes found during the VLBI era have the following characteristics:Episode _____________ Duration__ ΔLOD__LOD Rate1983 Dec 30-1984 Jan 28 ... 29 d ...-0.65 ms ..-8.3 ms/y ..........spin-up1989 Mar 15-1989 May 23 ...69 d ....0.68 .......+3.6 ..............spin-down1994 Jan 21-2001 Apr 01 ... 6.5 y ...-2.2 .........-0.36 ..extended spin-upFor the first two episodes listed, we find the acceleration grows from zero (or at least a relatively small value) to its extreme value in ~1 day, stays approximately constant at this value for 29 or 69 days, and then decays back to zero over ~1 day. The acceleration, while it occurs, gives an LOD rate much greater than the 0.02 ms/y rate from tidal friction.The third episode shows that occasionally a several-year-long episode occurs. The acceleration magnitude is smaller but can make a larger total change in LOD (and spin rate). Tidal friction requires >100 y to equal

  17. Mutual synchronization of spin-torque oscillators consisting of perpendicularly magnetized free layers and in-plane magnetized pinned layers

    Science.gov (United States)

    Taniguchi, Tomohiro; Tsunegi, Sumito; Kubota, Hitoshi

    2018-01-01

    A mutual synchronization of spin-torque oscillators coupled through current injection is studied theoretically. Models of electrical coupling in parallel and series circuits are proposed. Solving the Landau-Lifshitz-Gilbert equation, excitation of in-phase or antiphase synchronization, depending on the ways the oscillators are connected, is found. It is also found from both analytical and numerical calculations that the current-frequency relations for both parallel and series circuits are the same as that for a single spin-torque oscillator.

  18. Characterization of perpendicular STT-MRAM by spin torque ferromagnetic resonance

    Science.gov (United States)

    Sha, Chengcen; Yang, Liu; Lee, Han Kyu; Barsukov, Igor; Zhang, Jieyi; Krivorotov, Ilya

    We describe a method for simple quantitative measurement of magnetic anisotropy and Gilbert damping of the MTJ free layer in individual perpendicular STT-MRAM devices by spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation. We first show the dependence of ST-FMR spectra of an STT-MRAM element on out-of-plane magnetic field. In these spectra, resonances arising from excitation of the quasi-uniform and higher order spin wave eigenmodes of the free layer as well as acoustic mode of the synthetic antiferromagnet (SAF) are clearly seen. The quasi-uniform mode frequency at zero field gives magnetic anisotropy field of the free layer. Then we show dependence of the quasi-uniform mode linewidth on frequency is linear over a range of frequencies but deviatesfrom linearity in the low and high frequency regimes. Comparison to ST-FMR spectrareveals that the high frequency line broadening is linked to the SAF mode softening near the SAF spin flop transition at 5 kG. In the low field regime, the SAF mode frequency approaches that of the quasi-uniform mode, and resonant coupling of the modes leads to the line broadening. A linear fit to the linewidth data outside of the high and low field regimes gives the Gilbert damping parameter of the free layer. This work was supported by the Samsung Global MRAM Innovation Program.

  19. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

    Science.gov (United States)

    Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

    2015-01-01

    The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

  20. A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements

    Science.gov (United States)

    Lee, Seungyeon; Lee, Hyunjoo; Kim, Sojeong; Lee, Seungjun; Shin, Hyungsoon

    2010-04-01

    Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element.

  1. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  2. Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers

    KAUST Repository

    Yu, Jiawei

    2016-09-07

    We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.

  3. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    International Nuclear Information System (INIS)

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-01-01

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  4. Memory and Spin Injection Devices Involving Half Metals

    Directory of Open Access Journals (Sweden)

    M. Shaughnessy

    2011-01-01

    Full Text Available We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.

  5. Spin-orbit torque in a thin film of the topological insulator Bi2Se3: Crossover from the ballistic to diffusive regime

    Science.gov (United States)

    Ren, Y. J.; Deng, W. Y.; Geng, H.; Shen, R.; Shao, L. B.; Sheng, L.; Xing, D. Y.

    2017-12-01

    The spin-orbit torque provides an efficient method for switching the direction of a magnetization by using an electric field. Owing to the spin-orbit coupling, when an electric field is applied, a nonequilibrium spin density is generated, which exerts a torque on the local magnetization. Here, we investigate the spin-orbit torque in a thin film of topological insulator \\text{Bi}2\\text{Se}3 based upon a Boltzmann equation, with proper boundary conditions, which is applicable from the ballistic regime to the diffusive regime. It is shown that due to the spin-momentum interlocking of the electron surface states, the magnitude of the field-like torque is simply in linear proportion to the longitudinal electrical current. For a fixed electric field, the spin-orbit torque is proportional to the sample length in the ballistic limit, and saturates to a constant in the diffusive limit. The dependence of the torque on the magnetization direction and exchange coupling strength is also studied. Our theory may offer useful guidance for experimental investigations of the spin-orbit torque in finite-size systems.

  6. Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO

    Science.gov (United States)

    Zhang, C.; Fukami, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2015-07-01

    We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density Jth by one order, whereas Jth increases only slightly with further reducing the device size down to 30 nm. No significant increase in Jth is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.

  7. Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field

    International Nuclear Information System (INIS)

    Eklund, Anders; Sani, Sohrab R.; Chung, Sunjae; Amir Hossein Banuazizi, S.; Östling, Mikael; Gunnar Malm, B.; Bonetti, Stefano; Majid Mohseni, S.; Persson, Johan; Iacocca, Ezio; Åkerman, Johan

    2014-01-01

    The nano-scale spin torque oscillator (STO) is a compelling device for on-chip, highly tunable microwave frequency signal generation. Currently, one of the most important challenges for the STO is to increase its longer-time frequency stability by decreasing the 1/f frequency noise, but its high level makes even its measurement impossible using the phase noise mode of spectrum analyzers. Here, we present a custom made time-domain measurement system with 150 MHz measurement bandwidth making possible the investigation of the variation of the 1/f as well as the white frequency noise in a STO over a large set of operating points covering 18–25 GHz. The 1/f level is found to be highly dependent on the oscillation amplitude-frequency non-linearity and the vicinity of unexcited oscillation modes. These findings elucidate the need for a quantitative theoretical treatment of the low-frequency, colored frequency noise in STOs. Based on the results, we suggest that the 1/f frequency noise possibly can be decreased by improving the microstructural quality of the metallic thin films

  8. Influence of output power of a spin torque oscillator on phase locked loop operation

    Science.gov (United States)

    Tamaru, Shingo; Kubota, Hitoshi; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji

    2016-09-01

    This work investigates the influence of the output power of a spin torque oscillator (STO) on the operation of a phase locked loop (PLL) circuit. Timing jitter and minimum output power for stable PLL operation determined by Johnson noise and shot noise are first theoretically calculated, and compared with experimental results. The theory and experiment show a reasonably good agreement, indicating that smaller than -50 dBm (10 nW), or -60 dBm (1 nW) when a low pass filter is used, of output power is sufficient for stable PLL operation if a large timing jitter is acceptable. However, it is also shown that a large output power is needed to suppress timing jitter down to the level comparable to state-of-the-art commercial PLL circuits. The estimate of minimum output power for stable PLL operation is verified by intentionally attenuating the STO output signal down to -55 dBm (3.2 nW) and demonstrating a stable phase locked oscillation.

  9. Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

    OpenAIRE

    Yu, Guoqiang; Akyol, Mustafa; Upadhyaya, Pramey; Li, Xiang; He, Congli; Fan, Yabin; Montazeri, Mohammad; Alzate, Juan G.; Lang, Murong; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.

    2016-01-01

    Current-induced spin-orbit torques (SOTs) in structurally asymmetric multilayers have been used to efficiently manipulate magnetization. In a structure with vertical symmetry breaking, a damping-like SOT can deterministically switch a perpendicular magnet, provided an in-plane magnetic field is applied. Recently, it has been further demonstrated that the in-plane magnetic field can be eliminated by introducing a new type of perpendicular field-like SOT via incorporating a lateral structural a...

  10. Spin Injection in Thermally Assisted Magnetic Random Access Memory

    National Research Council Canada - National Science Library

    Deak, James G

    2005-01-01

    An integrated thermal, micromagnetic, spin-momentum-transfer (SMT) model was developed to study the effect of SMT on the programming current required for thermally assisted magnetic random access memory (MRAM...

  11. Towards a spin-ensemble quantum memory for superconducting qubits

    Science.gov (United States)

    Grezes, Cécile; Kubo, Yuimaru; Julsgaard, Brian; Umeda, Takahide; Isoya, Junichi; Sumiya, Hitoshi; Abe, Hiroshi; Onoda, Shinobu; Ohshima, Takeshi; Nakamura, Kazuo; Diniz, Igor; Auffeves, Alexia; Jacques, Vincent; Roch, Jean-François; Vion, Denis; Esteve, Daniel; Moelmer, Klaus; Bertet, Patrice

    2016-08-01

    This article reviews efforts to build a new type of quantum device, which combines an ensemble of electronic spins with long coherence times, and a small-scale superconducting quantum processor. The goal is to store over long times arbitrary qubit states in orthogonal collective modes of the spin-ensemble, and to retrieve them on-demand. We first present the protocol devised for such a multi-mode quantum memory. We then describe a series of experimental results using NV (as in nitrogen vacancy) center spins in diamond, which demonstrate its main building blocks: the transfer of arbitrary quantum states from a qubit into the spin ensemble, and the multi-mode retrieval of classical microwave pulses down to the single-photon level with a Hahn-echo like sequence. A reset of the spin memory is implemented in-between two successive sequences using optical repumping of the spins. xml:lang="fr"

  12. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    Science.gov (United States)

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-01

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  13. Ferromagnetic resonance study of the half-Heusler alloy NiMnSb. The benefit of using NiMnSb as a ferromagnetic layer in pseudo-spin-valve based spin-torque oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Riegler, Andreas

    2011-11-25

    Since the discovery of spin torque in 1996, independently by Berger and Slonczewski, and given its potential impact on information storage and communication technologies, (e.g. through the possibility of switching the magnetic configuration of a bit by current instead of a magnetic field, or the realization of high frequency spin torque oscillators (STO)), this effect has been an important field of spintronics research. One aspect of this research focuses on ferromagnets with low damping. The lower the damping in a ferromagnet, the lower the critical current that is needed to induce switching of a spin valve or induce precession of its magnetization. In this thesis ferromagnetic resonance (FMR) studies of NiMnSb layers are presented along with experimental studies on various spin-torque (ST) devices using NiMnSb. NiMnSb, when crystallized in the half-Heusler structure, is a half-metal which is predicted to have 100% spin polarization, a consideration which further increases its potential as a candidate for memory devices based on the giant magnetoresistance (GMR) effect. The FMR measurements show an outstandingly low damping factor for NiMnSb, in low 10{sup -3} range. This is about a factor of two lower than permalloy and well comparable to lowest damping for iron grown by molecular beam epitaxy (MBE). According to theory the 100% spin polarization properties of the bulk disappear at interfaces where the break in translational symmetry causes the gap in the minority spin band to collapse but can remain in other crystal symmetries such as (111). Consequently NiMnSb layers on (111)(In,Ga)As buffer are characterized in respect of anisotropies and damping. The FMR measurements on these samples indicates a higher damping that for the 001 samples, and a thickness dependent uniaxial in-plane anisotropy. Investigations of the material for device use is pursued by considering sub-micrometer sized elements of NiMnSb on 001 substrates, which were fabricated by electron

  14. Current induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy

    Science.gov (United States)

    Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid

    2018-03-01

    Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.

  15. Structure and properties of quarternary and tetragonal Heusler compounds for spintronics and spin transver torque applications

    Energy Technology Data Exchange (ETDEWEB)

    Zamani, Vajiheh Alijani

    2012-03-07

    This work is divided into two parts: part 1 is focused on the prediction of half-metallicity in quaternary Heusler compounds and their potential for spintronic applications and part 2 on the structural properties of Mn{sub 2}-based Heusler alloys and tuning the magnetism of them from soft to hard-magnetic for spin-transfer torque applications. In part 1, three different series of quaternary Heusler compounds are investigated, XX'MnGa (X=Cu, Ni and X'=Fe,Co), CoFeMnZ (Z=Al,Ga,Si,Ge), and Co{sub 2-x}Rh{sub x}MnZ (Z=Ga,Sn,Sb). All of these quaternary compounds except CuCoMnGa are predicted to be half-metallic ferromagnets by ab-initio electronic structure calculations. In the XX'MnGa class of compounds, NiFeMnGa has a low Curie temperature for technological applications but NiCoMnGa with a high spin polarization, magnetic moment, and Curie temperature is an interesting new material for spintronics applications. All CoFeMnZ compounds exhibit a cubic Heusler structur and their magnetic moments are in fair agreement with the Slater-Pauling rule indicating the halfmetallicity and high spin polarization required for spintronics applications. Their high Curie temperatures make them suitable for utilization at room temperature and above. The structural investigation revealed that the crystal structure of all Co{sub 2-x}Rh{sub x}MnZ compounds aside from CoRhMnSn exhibit different types of anti-site disorder. The magnetic moments of the disordered compounds deviate from the Slater-Pauling rule indicating that 100% spin polarization are not realized in CoRhMnGa, CoRhMnSb, and Co{sub 0.5}Rh{sub 1.5}MnSb. Exchange of one Co in Co{sub 2}MnSn by Rh results in the stable, well-ordered compound CoRhMnSn. This exchange of one of the magnetic Co atoms by a non-magnetic Rh atom keeps the magnetic properties and half-metallicity intact. In part 2, two series of Mn{sub 2}-based Heusler alloys are investigated, Mn{sub 3-x}Co{sub x}Ga and Mn{sub 2-x}Rh{sub 1+x}Sn. It has been

  16. Imaging magnetisation dynamics in nano-contact spin-torque vortex oscillators exhibiting gyrotropic mode splitting

    International Nuclear Information System (INIS)

    Keatley, Paul Steven; Hicken, Robert James; Sani, Sohrab Redjai; Åkerman, Johan; Hrkac, Gino; Mohseni, Seyed Majid; Dürrenfeld, Philipp

    2017-01-01

    Nano-contact spin-torque vortex oscillators (STVOs) are anticipated to find application as nanoscale sources of microwave emission in future technological applications. Presently the output power and phase stability of individual STVOs are not competitive with existing oscillator technologies. Synchronisation of multiple nano-contact STVOs via magnetisation dynamics has been proposed to enhance the microwave emission. The control of device-to-device variations, such as mode splitting of the microwave emission, is essential if multiple STVOs are to be successfully synchronised. In this work a combination of electrical measurements and time-resolved scanning Kerr microscopy (TRSKM) was used to demonstrate how mode splitting in the microwave emission of STVOs was related to the magnetisation dynamics that are generated. The free-running STVO response to a DC current only was used to identify devices and bias magnetic field configurations for which single and multiple modes of microwave emission were observed. Stroboscopic Kerr images were acquired by injecting a small amplitude RF current to phase lock the free-running STVO response. The images showed that the magnetisation dynamics of a multimode device with moderate splitting could be controlled by the injected RF current so that they exhibit similar spatial character to that of a single mode. Significant splitting was found to result from a complicated equilibrium magnetic state that was observed in Kerr images as irregular spatial characteristics of the magnetisation dynamics. Such dynamics were observed far from the nano-contact and so their presence cannot be detected in electrical measurements. This work demonstrates that TRSKM is a powerful tool for the direct observation of the magnetisation dynamics generated by STVOs that exhibit complicated microwave emission. Characterisation of such dynamics outside the nano-contact perimeter permits a deeper insight into the requirements for optimal phase-locking of

  17. Modulation of spin-orbit torque efficiency by thickness control of heavy metal layers in Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Sethi, P.; Krishnia, S.; Li, S.H.; Lew, W.S., E-mail: wensiang@ntu.edu.sg

    2017-03-15

    We investigate and quantify spin-orbit torque (SOT) strength by current induced effective in-plane magnetic fields and spin Hall angle (SHA) using AC harmonic Hall voltage measurements techniques on Ta/Pt/Co/Pt/Co/Ta thin film structures. The proposed Co/Pt thin film double stack gives property enhancement on thermal stability and perpendicular magnetization anisotropy strength over the single stack Pt/Co/Ta. In the proposed Co/Pt double stack we observed that increasing the Ta capping thickness to three times enhances the SHA in similar order, consistent with larger spin injection efficiency. Doubling the Pt spacer layer thickness reduces the SHA by nearly 1.4 times, due to partial cancellation of SOT by bottom layer Pt, negating the increase from the top Co/Pt interface. The in-plane current threshold for magnetization switching is lower with the increase of the SHA.

  18. Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

    Science.gov (United States)

    Bodnar, S Yu; Šmejkal, L; Turek, I; Jungwirth, T; Gomonay, O; Sinova, J; Sapozhnik, A A; Elmers, H-J; Kläui, M; Jourdan, M

    2018-01-24

    Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn 2 Au(001) thin films were generated by pulse current densities of ≃10 7  A/cm 2 . The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.

  19. Imaging magnetisation dynamics in nano-contact spin-torque vortex oscillators exhibiting gyrotropic mode splitting

    Science.gov (United States)

    Keatley, Paul Steven; Redjai Sani, Sohrab; Hrkac, Gino; Majid Mohseni, Seyed; Dürrenfeld, Philipp; Åkerman, Johan; Hicken, Robert James

    2017-04-01

    Nano-contact spin-torque vortex oscillators (STVOs) are anticipated to find application as nanoscale sources of microwave emission in future technological applications. Presently the output power and phase stability of individual STVOs are not competitive with existing oscillator technologies. Synchronisation of multiple nano-contact STVOs via magnetisation dynamics has been proposed to enhance the microwave emission. The control of device-to-device variations, such as mode splitting of the microwave emission, is essential if multiple STVOs are to be successfully synchronised. In this work a combination of electrical measurements and time-resolved scanning Kerr microscopy (TRSKM) was used to demonstrate how mode splitting in the microwave emission of STVOs was related to the magnetisation dynamics that are generated. The free-running STVO response to a DC current only was used to identify devices and bias magnetic field configurations for which single and multiple modes of microwave emission were observed. Stroboscopic Kerr images were acquired by injecting a small amplitude RF current to phase lock the free-running STVO response. The images showed that the magnetisation dynamics of a multimode device with moderate splitting could be controlled by the injected RF current so that they exhibit similar spatial character to that of a single mode. Significant splitting was found to result from a complicated equilibrium magnetic state that was observed in Kerr images as irregular spatial characteristics of the magnetisation dynamics. Such dynamics were observed far from the nano-contact and so their presence cannot be detected in electrical measurements. This work demonstrates that TRSKM is a powerful tool for the direct observation of the magnetisation dynamics generated by STVOs that exhibit complicated microwave emission. Characterisation of such dynamics outside the nano-contact perimeter permits a deeper insight into the requirements for optimal phase-locking of

  20. Oxygen control of perpendicular magnetic anisotropy and spin-orbit torques in Ta/ CoFeB/ MgO trilayer

    Science.gov (United States)

    Kannan, Harsha; Chen, Yunpeng; Haughey, Kevin; Xiao, John

    Current-induced magnetization switching allows the integration of magnetic capabilities into electric circuits. The spin-orbit interaction in heavy-metal/ferromagnetic heterostructures are of profound interest, since they provide an efficient way to manipulate the magnetization, via strong current driven spin orbital torques (SOTs). Materials possessing perpendicular magnetic anisotropy (PMA) are the preferred choice for the fabrication of memory devices since its magnetization can be switched with a small current density. Here we present the Oxygen control of perpendicular magnetic anisotropy of Ta/ CoFeB/ MgO, which is accomplished by fabricating a thin wedge layer of Al on top of the MgO layer followed by oxidation in Oxygen plasma. Thinner end of the Al wedge will be over oxidized and the thicker end will be under oxidized, hence degree of oxidation varies from thinner to the thicker end. This in effect provides a means to control the Oxygen content at the CoFeB/ MgO interface and to control the perpendicular magnetic anisotropy. We will further discuss the dependence of SOTs, measured with adiabatic harmonic Hall technique on varying PMA.

  1. Steady-state domain wall motion driven by adiabatic spin-transfer torque with assistance of microwave field

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xi-guang; Guo, Guang-hua, E-mail: guogh@mail.csu.edu.cn; Nie, Yao-zhuang; Xia, Qing-lin; Tang, Wei [School of Physics and Electronics, Central South University, Changsha 410083 (China); Wang, D. [Department of Physics, National University of Defense Technology, Changsha 410073 (China); Zeng, Zhong-ming [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2013-12-23

    We have studied the current-induced displacement of a 180° Bloch wall by means of micromagnetic simulation and analytical approach. It is found that the adiabatic spin-transfer torque can sustain a steady-state domain wall (DW) motion in the direction opposite to that of the electron flow without Walker Breakdown when a transverse microwave field is applied. This kind of motion is very sensitive to the microwave frequency and can be resonantly enhanced by exciting the domain wall thickness oscillation mode. A one-dimensional analytical model was established to account for the microwave-assisted wall motion. These findings may be helpful for reducing the critical spin-polarized current density and designing DW-based spintronic devices.

  2. Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

    Czech Academy of Sciences Publication Activity Database

    Skinner, T.D.; Olejník, Kamil; Cunningham, L.K.; Kurebayashi, H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, Tomáš; Ferguson, A.J.

    2015-01-01

    Roč. 6, Mar (2015), s. 6730 ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * current induced torques Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.329, year: 2015

  3. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  4. Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

    KAUST Repository

    Bang, Do

    2016-05-23

    We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

  5. Spin transfer torques in MnSi at ultralow current densities

    NARCIS (Netherlands)

    Jonietz, F.; Mühlbauer, S.; Pfleiderer, C.; Neubauer, A.; Münzer, W.; Bauer, A.; Adams, T.; Georgii, R.; Böni, P.; Duine, R.A.|info:eu-repo/dai/nl/304830127; Everschor, K.; Garst, M.; Rosch, A.

    2010-01-01

    Spin manipulation using electric currents is one of the most promising directions in the field of spintronics. We used neutron scattering to observe the influence of an electric current on the magnetic structure in a bulk material. In the skyrmion lattice of manganese silicon, where the spins form a

  6. Room-temperature spin-orbit torque in NiMnSb

    Czech Academy of Sciences Publication Activity Database

    Ciccarelli, C.; Anderson, L.; Tshitoyan, V.; Ferguson, A.J.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Gayles, J.; Železný, Jakub; Šmejkal, Libor; Yuan, Z.; Sinova, Jairo; Freimuth, F.; Jungwirth, Tomáš

    2016-01-01

    Roč. 12, č. 9 (2016), s. 855-861 ISSN 1745-2473 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : relativistic spintronics * current induced torques Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 22.806, year: 2016

  7. Intraband and interband spin-orbit torques in non-centrosymmetric ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Li, H.; Gao, L.; Zarbo, Liviu; Výborný, Karel; Wang, X.; Garate, I.; Dogan, F.; Čejchan, Antonín; Sinova, Jairo; Jungwirth, Tomáš; Manchon, A.

    2015-01-01

    Roč. 91, č. 13 (2015), , "134402-1"-"134402-9" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * current induced torques Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  8. Single electron-spin memory with a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

    2007-01-01

    We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

  9. Spin transfer torques in MnSi at ultralow current densities.

    Science.gov (United States)

    Jonietz, F; Mühlbauer, S; Pfleiderer, C; Neubauer, A; Münzer, W; Bauer, A; Adams, T; Georgii, R; Böni, P; Duine, R A; Everschor, K; Garst, M; Rosch, A

    2010-12-17

    Spin manipulation using electric currents is one of the most promising directions in the field of spintronics. We used neutron scattering to observe the influence of an electric current on the magnetic structure in a bulk material. In the skyrmion lattice of manganese silicon, where the spins form a lattice of magnetic vortices similar to the vortex lattice in type II superconductors, we observe the rotation of the diffraction pattern in response to currents that are over five orders of magnitude smaller than those typically applied in experimental studies on current-driven magnetization dynamics in nanostructures. We attribute our observations to an extremely efficient coupling of inhomogeneous spin currents to topologically stable knots in spin structures.

  10. Nanoscale layer-selective readout of magnetization direction from a magnetic multilayer using a spin-torque oscillator

    International Nuclear Information System (INIS)

    Suto, Hirofumi; Nagasawa, Tazumi; Kudo, Kiwamu; Mizushima, Koichi; Sato, Rie

    2014-01-01

    Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions. Here we introduce a novel readout method for detecting the magnetization direction of a nanoscale magnet by use of a spin-torque oscillator (STO). The principles behind this method are dynamic dipolar coupling between an STO and a nanoscale magnet, and detection of ferromagnetic resonance (FMR) of this coupled system from the STO signal. Because the STO couples with a specific magnet by tuning the STO oscillation frequency to match its FMR frequency, this readout method can selectively determine the magnetization direction of the magnet. (papers)

  11. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  12. Negative optical radiation force and spin torques on subwavelength prolate and oblate spheroids in fractional Bessel-Gauss pincers light-sheets.

    Science.gov (United States)

    Mitri, F G

    2017-07-01

    Fractional Bessel-Gauss light-sheets [J. Opt.19, 055602 (2017)JOOPDB0150-536X10.1088/2040-8986/aa649a], which correspond to finite optical "slices" in 2D and possess asymmetric slit openings and bending characteristics, are examined from the standpoint of optical radiation force and spin torque theories for a subwavelength spheroid with arbitrary orientation in space. The vector angular spectrum decomposition method in addition to the Lorenz gauge condition and Maxwell's equations are used to determine the Cartesian components of the incident radiated electric field of the Bessel-Gauss light-sheets. In the framework of the dipole approximation, the numerical results for the Cartesian components of the optical radiation force and spin torque vectors show that negative forces (oriented in the opposite direction of wave motion) and spin torques arise depending on the beam parameters, the orientation of the subwavelength spheroid in 3D space, and its aspect ratio (i.e., prolate versus oblate). The spin torque sign reversal reveals that counter-clockwise or clockwise rotations around the center of mass of the spheroid can occur. The results find important applications in the application of auto-focusing light-sheets in particle manipulation, rotation, and optical sorting devices.

  13. Demonstrating multibit magnetic memory in the Fe8 high-spin molecule by muon spin rotation

    Science.gov (United States)

    Shafir, Oren; Keren, Amit; Maegawa, Satoru; Ueda, Miki; Amato, Alex; Baines, Chris

    2005-09-01

    We develop a method to detect the quantum nature of high-spin molecules using muon spin rotation and a three-step field cycle ending always with the same field. We use this method to demonstrate that the Fe8 molecule can remember six (possibly eight) different histories (bits). A wide range of fields can be used to write a particular bit, and the information is stored in discrete states. Therefore, Fe8 can be used as a model compound for multibit magnetic memory. Our experiment also paves the way for magnetic quantum tunneling detection in films.

  14. Spin torque and critical currents for magnetic vortex nano-oscillator in nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Guslienko, K Y; Gonzalez, J [Dpto. Fisica de Materiales, Universidad del Pais Vasco, 20018 Donostia-San Sebastian (Spain); Aranda, G R, E-mail: sckguslk@ehu.es [Centro de Fisica de Materiales UPV/EHU-CSIC, 20018 San Sebastian (Spain)

    2011-04-01

    We calculated the main dynamic parameters of the spin polarized current induced magnetic vortex oscillations in nanopillars, such as the range of current density, where vortex steady oscillations exist, the oscillation frequency and orbit radius. We accounted for both the non-linear vortex frequency and non-linear vortex damping. To describe the vortex excitations by the spin polarized current we used a generalized Thiele approach to motion of the vortex core as a collective coordinate. All the calculation results are represented via the free layer sizes, saturation magnetization, and the Gilbert damping. Predictions of the developed model can be checked experimentally.

  15. Spin transfer and spin pumping in disordered normal metal-antiferromagnetic insulator systems

    Science.gov (United States)

    Gulbrandsen, Sverre A.; Brataas, Arne

    2018-02-01

    We consider an antiferromagnetic insulator that is in contact with a metal. Spin accumulation in the metal can induce spin-transfer torques on the staggered field and on the magnetization in the antiferromagnet. These torques relate to spin pumping: the emission of spin currents into the metal by a precessing antiferromagnet. We investigate how the various components of the spin-transfer torque are affected by spin-independent disorder and spin-flip scattering in the metal. Spin-conserving disorder reduces the coupling between the spins in the antiferromagnet and the itinerant spins in the metal in a manner similar to Ohm's law. Spin-flip scattering leads to spin-memory loss with a reduced spin-transfer torque. We discuss the concept of a staggered spin current and argue that it is not a conserved quantity. Away from the interface, the staggered spin current varies around a 0 mean in an irregular manner. A network model explains the rapid decay of the staggered spin current.

  16. Spin transport in metal and oxide devices at the nanoscale

    NARCIS (Netherlands)

    Parui, Subir; Rana, Kumari Gaurav; Banerjee, Tamalika

    2012-01-01

    Here we discuss a non-destructive technique that characterizes spin and charge transport at the nanometer scale, across buried layers and interfaces, in magnetic memory elements as used in spin transfer torque based Magnetic Random Access Memory (STT-MRAM). While probing in the

  17. Dissipation Assisted Quantum Memory with Coupled Spin Systems

    Science.gov (United States)

    Jiang, Liang; Verstraete, Frank; Cirac, Ignacio; Lukin, Mikhail

    2009-05-01

    Dissipative dynamics often destroys quantum coherences. However, one can use dissipation to suppress decoherence. A well-known example is the so-called quantum Zeno effect, in which one can freeze the evolution using dissipative processes (e.g., frequently projecting the system to its initial state). Similarly, the undesired decoherence of quantum bits can also be suppressed using controlled dissipation. We propose and analyze the use of this generalization of quantum Zeno effect for protecting the quantum information encoded in the coupled spin systems. This new approach may potentially enhance the performance of quantum memories, in systems such as nitrogen-vacancy color-centers in diamond.

  18. Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO

    Science.gov (United States)

    Zhang, C.; Fukami, S.; Watanabe, K.; Ohkawara, A.; DuttaGupta, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2016-11-01

    We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2-3 depending on the W resistivity controlled by the sputtering conditions.

  19. Long lived quantum memory with nuclear atomic spins

    International Nuclear Information System (INIS)

    Sinatra, A.; Reinaudi, G.; Dantan, A.; Giacobino, E.; Pinard, M.

    2005-01-01

    We propose store non-classical states of light into the macroscopic collective nuclear spin (10 18 atoms) of a 3 He vapor, using metastability exchange collisions. We show that these collisions currently used to transfer orientation from the metastable state 2 3 S 1 to the ground state state of 3 He, may conserve quantum correlations and give a possible experimental scheme to perfectly map a squeezed vacuum field state onto a nuclear spin state, which should allow for extremely long storage times (hours). In addition to the apparent interest for quantum information, the scheme offers the intriguing possibility to create a long-lived non classical state for spins. During a metastability exchange collision an atom in the ground state state and an atom in the metastable triplet state 2 3 S exchange their electronic spin variables. The ground state atom is then brought into the metastable state and vice-versa. A laser transition is accessible from the metastable state so that the metastable atoms are coupled with light. This, together with metastability exchange collisions, provides an effective coupling between ground state atoms and light. In our scheme, a coherent field and a squeezed vacuum field excite a Raman transition between Zeeman sublevels of the metastable state, after the system is prepared in the fully polarized state by preliminary optical pumping. According to the intensity of the coherent field, which acts as a control parameter, the squeezing of the field can be selectively transferred either to metastable or to ground state atoms. Once it is encoded in the purely nuclear spin of the ground state of 3 He, which is 20 eV apart from the nearest excited state and interacts very little with the environment, the quantum state can survive for times as long as several hours. By lighting up only the coherent field in the same configuration as for the 'writing' phase, the nuclear spin memory can be 'read' after a long delay, the squeezing being transferred

  20. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  1. Size dependence of vortex-type spin torque oscillation in a Co2Fe0.4Mn0.6Si Heusler alloy disk

    Science.gov (United States)

    Seki, T.; Kubota, T.; Yamamoto, T.; Takanashi, K.

    2018-02-01

    This paper reports the systematic investigation of vortex-type spin torque oscillation in circular disks of highly spin-polarized Co2Fe0.4Mn0.6Si (CFMS) Heusler alloys. We fabricated the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with various disk diameters (D) using the layer stack of CFMS/Ag3Mg/CFMS. The gyrotropic motion of the vortex core was successfully excited for the CFMS circular disks with 0.2 µm  ⩽  D  ⩽  0.3 µm. The CPP-GMR device with D  =  0.2 µm exhibited the Q factor of more than 5000 and the large output power of 0.4 nW owing to the high coherency of vortex dynamics and the high spin-polarization of CFMS. However, the Q factor was remarkably decreased as D was reduced from 0.2 µm to 0.14 µm. The comparison with the calculated resonance frequencies suggested that this degradation of the Q factor was due to the transition of the oscillation mode from the vortex mode to other modes such as the low-coherent out-of-plane precession mode. The present experimental results also suggest that there exists an adequate disk size for the enhanced Q factor of the vortex-type spin torque oscillation.

  2. Quantum memory for microwave photons in an inhomogeneously broadened spin ensemble.

    Science.gov (United States)

    Julsgaard, Brian; Grezes, Cécile; Bertet, Patrice; Mølmer, Klaus

    2013-06-21

    We propose a multimode quantum memory protocol able to store the quantum state of the field in a microwave resonator into an ensemble of electronic spins. The stored information is protected against inhomogeneous broadening of the spin ensemble by spin-echo techniques resulting in memory times orders of magnitude longer than previously achieved. By calculating the evolution of the first and second moments of the spin-cavity system variables for current experimental parameters, we show that a memory based on nitrogen vacancy center spins in diamond can store a qubit encoded on the |0> and |1> Fock states of the field with 80% fidelity and outperform classical memory strategies for storage times ≤69  μs.

  3. Electrical-field and spin-transfer torque effects in CoFeB/MgO-based perpendicular magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, Chikako, E-mail: cyoshida@jp.fujitsu.com; Noshiro, Hideyuki; Yamazaki, Yuichi; Sugii, Toshihiro [Fujitsu limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197 (Japan); Furuya, Atsushi; Ataka, Tadashi; Tanaka, Tomohiro; Uehara, Yuji [Fujitsu limited, 4-1-1 Kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa, 211-8588 (Japan)

    2016-05-15

    The electric-field (E) dependence of the magnetoresistance (RH) loops for top-pinned perpendicular CoFeB/MgO-based magnetic tunnel junctions (MTJs) in the presence of a spin-transfer torque (STT)-current was measured. The E effects were distinguished from the STT-current effects using a micromagnetic simulation. The coercive field (H{sub c}) decreased and the RH loop shifted as both the positive and negative bias E increased owing to the STT current. Furthermore, E-assisted switching for an MTJ with a diameter of 20 nm, which exhibited a nearly coherent magnetization reversal, was demonstrated using micromagnetic simulation.

  4. Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque.

    Science.gov (United States)

    Useinov, Arthur; Lin, Hsiu-Hau; Lai, Chih-Huang

    2017-08-21

    The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d av  tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d av  ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer.

  5. Memory-built-in quantum cloning in a hybrid solid-state spin register.

    Science.gov (United States)

    Wang, W-B; Zu, C; He, L; Zhang, W-G; Duan, L-M

    2015-07-16

    As a way to circumvent the quantum no-cloning theorem, approximate quantum cloning protocols have received wide attention with remarkable applications. Copying of quantum states to memory qubits provides an important strategy for eavesdropping in quantum cryptography. We report an experiment that realizes cloning of quantum states from an electron spin to a nuclear spin in a hybrid solid-state spin register with near-optimal fidelity. The nuclear spin provides an ideal memory qubit at room temperature, which stores the cloned quantum states for a millisecond under ambient conditions, exceeding the lifetime of the original quantum state carried by the electron spin by orders of magnitude. The realization of a cloning machine with built-in quantum memory provides a key step for application of quantum cloning in quantum information science.

  6. Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

    Science.gov (United States)

    2016-09-01

    TECHNICAL REPORT 3046 September 2016 GENERATION OF QUALITY PULSES FOR CONTROL OF QUBIT/QUANTUM MEMORY SPIN STATES: EXPERIMENTAL AND SIMULATION...Osama Nayfeh SSC Pacific Hector Romero Lance Lerum NREIP Mohammed Fahem SDSU Research Foundation Approved for public release. SSC Pacific San...nuclear spin states of qubits/quantum memory applicable to semiconductor, superconductor, ionic, and superconductor-ionic hybrid technologies. As the

  7. Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

    Science.gov (United States)

    Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

    2018-04-01

    This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

  8. Quantum Memory for Microwave Photons in an Inhomogeneously Broadened Spin Ensemble

    DEFF Research Database (Denmark)

    Julsgaard, Brian; Grezes, Cécile; Bertet, Patrice

    2013-01-01

    orders of magnitude longer than previously achieved. By calculating the evolution of the first and second moments of the spin-cavity system variables for realistic experimental parameters, we show that a memory based on NV center spins in diamond can store a qubit encoded on the |0> and |1> Fock states...

  9. Quantifying angular dependence of spin-orbit torques in Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy

    Science.gov (United States)

    Chen, Yunpeng; Celik, Halise; Wang, Tao; Kannan, Harsha; Krivorotov, Ilya N.; Xiao, John Q.

    2017-04-01

    The spin-orbit interactions in heavy-metal/ferromagnet heterostructures have attracted considerable attention because they provide an efficient way to manipulate the magnetization with strong current-driven spin-orbit torques (SOTs) via the spin Hall effect in the heavy metal or Rashba effect due to the symmetry breaking at the interface. Theoretical calculations predict no dependence of the SOTs on the out-of-plane angle of magnetization due to spin Hall effect, but Rashba effect induces a nontrivial angular dependence of SOTs. Quantitative measurements with adiabatic harmonic Hall technique have observed the angular dependence in Ta/CoFeB/MgO or Pt /Co /Al Ox with perpendicular magnetic anisotropy. However, this method is complicated because the signal consists of both anomalous and planar Hall contributions. In addition, the fitting of the measurement data is sensitive to the fitting parameters, particularly to the perpendicular anisotropy, in a certain angle region (40-70°). To avoid this uncertainty, we have developed a scheme to quantify the angular dependence of SOTs based on the magneto-optic Kerr effect with field calibration. Without fitting procedures, we precisely determine the SOTs and their angle dependence on the magnetization orientation. We observe a strong angular dependence that is different from the previous experimental observations. Based on this strong dependence, we conclude that a Rashba effect at the same interface, that is responsible for the perpendicular magnetic anisotropy, is the dominant mechanism for the current-driven SOTs in this system.

  10. Demonstrating Multi-bit Magnetic Memory in the Fe8 High Spin Molecule by Muon Spin Rotation

    OpenAIRE

    Shafir, Oren; Keren, Amit; Maegawa, Satoru; Ueda, Miki; Amato, Alex; Baines, Chris

    2005-01-01

    We developed a method to detect the quantum nature of high spin molecules using muon spin rotation, and a three-step field cycle ending always with the same field. We use this method to demonstrate that the Fe8 molecule can remember 6 (possibly 8) different histories (bits). A wide range of fields can be used to write a particular bit, and the information is stored in discrete states. Therefore, Fe8 can be used as a model compound for Multi-bit Magnetic Memory. Our experiment also paves the w...

  11. Coherent Spin Control at the Quantum Level in an Ensemble-Based Optical Memory.

    Science.gov (United States)

    Jobez, Pierre; Laplane, Cyril; Timoney, Nuala; Gisin, Nicolas; Ferrier, Alban; Goldner, Philippe; Afzelius, Mikael

    2015-06-12

    Long-lived quantum memories are essential components of a long-standing goal of remote distribution of entanglement in quantum networks. These can be realized by storing the quantum states of light as single-spin excitations in atomic ensembles. However, spin states are often subjected to different dephasing processes that limit the storage time, which in principle could be overcome using spin-echo techniques. Theoretical studies suggest this to be challenging due to unavoidable spontaneous emission noise in ensemble-based quantum memories. Here, we demonstrate spin-echo manipulation of a mean spin excitation of 1 in a large solid-state ensemble, generated through storage of a weak optical pulse. After a storage time of about 1 ms we optically read-out the spin excitation with a high signal-to-noise ratio. Our results pave the way for long-duration optical quantum storage using spin-echo techniques for any ensemble-based memory.

  12. Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements

    Science.gov (United States)

    Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,

    2010-04-01

    In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.

  13. The influence of thermal activation and the intrinsic temperature dependence of the spin torque effect in current-induced domain wall motion

    International Nuclear Information System (INIS)

    Dagras, P; Klaeui, M; Laufenberg, M; Bedau, D; Vila, L; Faini, G; Vaz, C A F; Bland, J A C; Ruediger, U

    2007-01-01

    An experimental study of domain wall motion in Ni 80 Fe 20 ring structures induced by current pulses as well as conventional magnetic fields is presented. Using constrictions we demonstrate that current-induced domain wall motion can be used to displace walls into parts of the structure where no pulsed currents are flowing. Measurements at variable temperatures between 2 and 300 K show that the fields necessary for wall motion decrease with increasing temperature, which can be explained by thermal activation. For the current-induced case we find, depending on the geometry and temperature range, that the current densities necessary for displacement can increase or decrease with rising temperature. This indicates that, in addition to thermal excitations, an intrinsic temperature dependence of the efficiency of the spin torque effect is present and leads to an increase in the critical current density with increasing temperature

  14. Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

    Science.gov (United States)

    Rose, Brendon Charles

    This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic

  15. Spin-memory loss due to spin-orbit coupling at ferromagnet/heavy-metal interfaces: Ab initio spin-density matrix approach

    Science.gov (United States)

    Dolui, Kapildeb; Nikolić, Branislav K.

    2017-12-01

    Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM), and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large numbers of spintronic experiments. However, its strength extracted by fitting experimental data to phenomenological semiclassical theory, which replaces each interface by a fictitious bulk diffusive layer, is poorly understood from a microscopic quantum framework and/or materials properties. Here we describe an ensemble of flowing spin quantum states using spin-density matrix, so that SML is measured like any decoherence process by the decay of its off-diagonal elements or, equivalently, by the reduction of the magnitude of polarization vector. By combining this framework with density functional theory, we examine how all three components of the polarization vector change at Co/Ta, Co/Pt, Co/Cu, Pt/Cu, and Pt/Au interfaces embedded within Cu/FM/HM/Cu vertical heterostructures. In addition, we use ab initio Green's functions to compute spectral functions and spin textures over FM, HM, and NM monolayers around these interfaces which quantify interfacial spin-orbit coupling and explain the microscopic origin of SML in long-standing puzzles, such as why it is nonzero at the Co/Cu interface; why it is very large at the Pt/Cu interface; and why it occurs even in the absence of disorder, intermixing and magnons at the interface.

  16. Aging, rejuvenation and memory phenomena in spin glasses

    Indian Academy of Sciences (India)

    laws used to describe the isothermal aging observed in spin glasses after a quench down to the low-temperature phase. ... has been cooled down below its glass temperature Tg, and t is the time elapsed since the excitation has been applied. ..... [22] M Sales, J P Bouchaud and F Ritort, J. Phys. A: Math. Gen. 36, 665 (2003).

  17. Aging, rejuvenation and memory phenomena in spin glasses

    Indian Academy of Sciences (India)

    and care is taken to ensure that the response remains in the linear regime. How- ever, it is very difficult .... be interpreted in terms of a hierarchical organization of the metastable states in which the system evolves .... tween a critical regime and an activated regime in spin glasses, with energy barriers vanishing at Tc and (b) a ...

  18. Interface-engineered templates for molecular spin memory devices

    NARCIS (Netherlands)

    Raman, Karthik V.; Kamerbeek, Alexander M.; Mukherjee, Arup; Atodiresei, Nicolae; Sen, Tamal K.; Lazic, Predrag; Caciuc, Vasile; Michel, Reent; Stalke, Dietmar; Mandal, Swadhin K.; Bluegel, Stefan; Muenzenberg, Markus; Moodera, Jagadeesh S.

    2013-01-01

    The use of molecular spin state as a quantum of information for storage, sensing and computing has generated considerable interest in the context of next-generation data storage and communication devices(1,2), opening avenues for developing multifunctional molecular spintronics(3). Such ideas have

  19. Operating Spin Echo in the Quantum Regime for an Atomic-Ensemble Quantum Memory.

    Science.gov (United States)

    Rui, Jun; Jiang, Yan; Yang, Sheng-Jun; Zhao, Bo; Bao, Xiao-Hui; Pan, Jian-Wei

    2015-09-25

    Spin echo is a powerful technique to extend atomic or nuclear coherence times by overcoming the dephasing due to inhomogeneous broadenings. However, there are disputes about the feasibility of applying this technique to an ensemble-based quantum memory at the single-quanta level. In this experimental study, we find that noise due to imperfections of the rephasing pulses has both intense superradiant and weak isotropic parts. By properly arranging the beam directions and optimizing the pulse fidelities, we successfully manage to operate the spin echo technique in the quantum regime by observing nonclassical photon-photon correlations as well as the quantum behavior of retrieved photons. Our work for the first time demonstrates the feasibility of harnessing the spin echo method to extend the lifetime of ensemble-based quantum memories at the single-quanta level.

  20. Quantum memory assisted probing of dynamical spin correlations.

    Science.gov (United States)

    Romero-Isart, O; Rizzi, M; Muschik, C A; Polzik, E S; Lewenstein, M; Sanpera, A

    2012-02-10

    We propose a method to probe time-dependent correlations of nontrivial observables in many-body ultracold lattice gases. The scheme uses a quantum nondemolition matter-light interface, first to map the observable of interest on the many-body system into the light and then to store coherently such information into an external system acting as a quantum memory. Correlations of the observable at two (or more) instances of time are retrieved with a single final measurement that includes the readout of the quantum memory. Such a method brings to reach the study of dynamics of many-body systems in and out of equilibrium by means of quantum memories in the field of quantum simulators.

  1. Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

    Science.gov (United States)

    Bhattacharya, Dhritiman; Mamun Al-Rashid, Md; Atulasimha, Jayasimha

    2017-10-01

    Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

  2. Transient magnetization dynamics of spin-torque oscillator and magnetic dot coupled by magnetic dipolar interaction: Reading of magnetization direction using magnetic resonance

    Science.gov (United States)

    Kanao, Taro; Suto, Hirofumi; Kudo, Kiwamu; Nagasawa, Tazumi; Mizushima, Koichi; Sato, Rie

    2018-01-01

    We study the magnetization dynamics of a spin-torque oscillator (STO) and a magnetic dot coupled by a magnetic dipolar field using micromagnetic simulation with the aim of developing a read method in magnetic recording that uses magnetic resonance. We propose an STO with a perpendicularly magnetized free layer and an in-plane-magnetized fixed layer as a suitable STO for this resonance read method. When the oscillation frequency of the STO is near the ferromagnetic resonance (FMR) frequency of the magnetic dot, the oscillation amplitude of the STO decreases because FMR excited in the magnetic dot causes additional dissipation. To estimate the read rate of the resonance read method, we study the transient magnetization dynamics to the coupled oscillation state from an initial state where the STO is in a free-running state and the magnetic dot is in a stationary stable state. The STO shows transient dynamics within a time scale of 1 ns, which means that the STO can perform resonance reading with a response time within this time scale. This response time is shorter when the separation length between the STO and the magnetic dot is shorter, which indicates that the response speed can become faster by increasing the strength of the interaction between the STO and the magnetic dot. Successive reads are demonstrated by moving the STO over an array of magnetic dots.

  3. Nanoscale control of stripe-ordered magnetic domain walls by vertical spin transfer torque in La0.67Sr0.33MnO3 film

    Science.gov (United States)

    Wang, Jing; Wu, Shizhe; Ma, Ji; Xie, Lishan; Wang, Chuanshou; Malik, Iftikhar Ahmed; Zhang, Yuelin; Xia, Ke; Nan, Ce-Wen; Zhang, Jinxing

    2018-02-01

    Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered magnetic domain-wall re-orientation strongly depends on the AC frequency of the scanning probe voltage which was applied on the capacitor.

  4. Solid State Spin-Wave Quantum Memory for Time-Bin Qubits.

    Science.gov (United States)

    Gündoğan, Mustafa; Ledingham, Patrick M; Kutluer, Kutlu; Mazzera, Margherita; de Riedmatten, Hugues

    2015-06-12

    We demonstrate the first solid-state spin-wave optical quantum memory with on-demand read-out. Using the full atomic frequency comb scheme in a Pr(3+):Y2SiO5 crystal, we store weak coherent pulses at the single-photon level with a signal-to-noise ratio >10. Narrow-band spectral filtering based on spectral hole burning in a second Pr(3+):Y2SiO5 crystal is used to filter out the excess noise created by control pulses to reach an unconditional noise level of (2.0±0.3)×10(-3) photons per pulse. We also report spin-wave storage of photonic time-bin qubits with conditional fidelities higher than achievable by a measure and prepare strategy, demonstrating that the spin-wave memory operates in the quantum regime. This makes our device the first demonstration of a quantum memory for time-bin qubits, with on-demand read-out of the stored quantum information. These results represent an important step for the use of solid-state quantum memories in scalable quantum networks.

  5. Controlled Rephasing of Single Collective Spin Excitations in a Cold Atomic Quantum Memory.

    Science.gov (United States)

    Albrecht, Boris; Farrera, Pau; Heinze, Georg; Cristiani, Matteo; de Riedmatten, Hugues

    2015-10-16

    We demonstrate active control of inhomogeneous dephasing and rephasing for single collective atomic spin excitations (spin waves) created by spontaneous Raman scattering in a quantum memory based on cold 87Rb atoms. The control is provided by a reversible external magnetic field gradient inducing an inhomogeneous broadening of the atomic hyperfine levels. We demonstrate experimentally that active rephasing preserves the single photon nature of the retrieved photons. Finally, we show that the control of the inhomogeneous dephasing enables the creation of time-separated spin waves in a single ensemble followed by a selective read-out in time. This is an important step towards the implementation of a functional temporally multiplexed quantum repeater node.

  6. Demonstration of Atomic Frequency Comb Memory for Light with Spin-Wave Storage

    Science.gov (United States)

    Afzelius, Mikael; Usmani, Imam; Amari, Atia; Lauritzen, Björn; Walther, Andreas; Simon, Christoph; Sangouard, Nicolas; Minář, Jiří; de Riedmatten, Hugues; Gisin, Nicolas; Kröll, Stefan

    2010-01-01

    We present a light-storage experiment in a praseodymium-doped crystal where the light is mapped onto an inhomogeneously broadened optical transition shaped into an atomic frequency comb. After absorption of the light, the optical excitation is converted into a spin-wave excitation by a control pulse. A second control pulse reads the memory (on-demand) by reconverting the spin-wave excitation to an optical one, where the comb structure causes a photon-echo-type rephasing of the dipole moments and directional retrieval of the light. This combination of photon-echo and spin-wave storage allows us to store submicrosecond (450 ns) pulses for up to 20μs. The scheme has a high potential for storing multiple temporal modes in the single-photon regime, which is an important resource for future long-distance quantum communication based on quantum repeaters.

  7. Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

    Science.gov (United States)

    2016-09-01

    control circuitry for control of electron/ nuclear spin states of qubits/quantum memory applicable to semiconductor , superconductor, ionic, and...rotation and tilted rotational axes respectively. There have been many proposed methods of suppressing these errors. Of these, the BB1 sequence...Modulation of the Silicon Vacancy in 4 H− SiC at Room Temperature,” Physical Review, vol. B92, no. 16, pp. 161–202. Klimov, P, V., A. L. Falk, D. J

  8. Configuration memory in patchwork dynamics for low-dimensional spin glasses

    Science.gov (United States)

    Yang, Jie; Middleton, A. Alan

    2017-12-01

    A patchwork method is used to study the dynamics of loss and recovery of an initial configuration in spin glass models in dimensions d =1 and d =2 . The patchwork heuristic is used to accelerate the dynamics to investigate how models might reproduce the remarkable memory effects seen in experiment. Starting from a ground-state configuration computed for one choice of nearest-neighbor spin couplings, the sample is aged up to a given scale under new random couplings, leading to the partial erasure of the original ground state. The couplings are then restored to the original choice and patchwork coarsening is again applied, in order to assess the recovery of the original state. Eventual recovery of the original ground state upon coarsening is seen in two-dimensional Ising spin glasses and one-dimensional clock models, while one-dimensional Ising spin systems neither lose nor gain overlap with the ground state during the recovery stage. The recovery for the two-dimensional Ising spin glasses suggests scaling relations that lead to a recovery length scale that grows as a power of the aging length scale.

  9. Casimir torque

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Guzman, Jose C [Centro de Ciencias FIsicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62251 Cuernavaca, Morelos (Mexico); Mochan, W Luis [Centro de Ciencias FIsicas, Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62251 Cuernavaca, Morelos (Mexico)

    2006-05-26

    We develop a formalism for the calculation of the flow of angular momentum carried by the fluctuating electromagnetic field within a cavity bounded by two flat anisotropic materials. By generalizing a procedure employed recently for the calculation of the Casimir force between arbitrary materials, we obtain an expression for the torque between anisotropic plates in terms of their reflection amplitude matrices. We evaluate the torque in 1D for ideal and dispersive model materials.

  10. Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

    Science.gov (United States)

    Wang, Jian-Ping

    An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

  11. Multilevel Holstein-Primakoff approximation and its application to atomic spin squeezing and ensemble quantum memories

    DEFF Research Database (Denmark)

    Kurucz, Zoltan; Mølmer, Klaus

    2010-01-01

    We show that an ensemble of identical d-level atoms can be efficiently described by d-1 collective oscillator degrees of freedom in the vicinity of a product state with all atoms in the same, but otherwise arbitrary single-particle state. We apply our description to two different kinds of spin sq...... in the final degree of squeezing. We also discuss the role of the two kinds of squeezing when multisublevel atoms are used as quantum memories for light....... squeezing: (i) when each spin-F atom is individually squeezed without creating interatomic entanglement and (ii) when a particular collective atomic oscillator mode is squeezed via quantum nondemolition (QND) measurement and feedback. When combined in sequence, the order of the two methods is relevant...

  12. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  13. Impact of Disorder on Spin Dependent Transport Phenomena

    KAUST Repository

    Saidaoui, Hamed

    2016-07-03

    The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

  14. Magnon-mediated Dzyaloshinskii-Moriya torque in homogeneous ferromagnets

    KAUST Repository

    Manchon, Aurelien

    2014-12-01

    In thin magnetic layers with structural inversion asymmetry and spin-orbit coupling, the Dzyaloshinskii-Moriya interaction arises at the interface. When a spin-wave current jm flows in a system with a homogeneous magnetization m, this interaction produces an effective fieldlike torque of the form TFLm×(z×jm) as well as a dampinglike torque, TDLm×[(z×jm)×m], the latter only in the presence of spin-wave relaxation (z is normal to the interface). These torques mediated by the magnon flow can reorient the time-averaged magnetization direction and display a number of similarities with the torques arising from the electron flow in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling. This magnon-mediated spin-orbit torque can be efficient in the case of magnons driven by a thermal gradient.

  15. Towards quantum networks of single spins: analysis of a quantum memory with an optical interface in diamond.

    Science.gov (United States)

    Blok, M S; Kalb, N; Reiserer, A; Taminiau, T H; Hanson, R

    2015-01-01

    Single defect centers in diamond have emerged as a powerful platform for quantum optics experiments and quantum information processing tasks. Connecting spatially separated nodes via optical photons into a quantum network will enable distributed quantum computing and long-range quantum communication. Initial experiments on trapped atoms and ions as well as defects in diamond have demonstrated entanglement between two nodes over several meters. To realize multi-node networks, additional quantum bit systems that store quantum states while new entanglement links are established are highly desirable. Such memories allow for entanglement distillation, purification and quantum repeater protocols that extend the size, speed and distance of the network. However, to be effective, the memory must be robust against the entanglement generation protocol, which typically must be repeated many times. Here we evaluate the prospects of using carbon nuclear spins in diamond as quantum memories that are compatible with quantum networks based on single nitrogen vacancy (NV) defects in diamond. We present a theoretical framework to describe the dephasing of the nuclear spins under repeated generation of NV spin-photon entanglement and show that quantum states can be stored during hundreds of repetitions using typical experimental coupling parameters. This result demonstrates that nuclear spins with weak hyperfine couplings are promising quantum memories for quantum networks.

  16. Quantum-memory-assisted entropic uncertainty in spin models with Dzyaloshinskii-Moriya interaction

    Science.gov (United States)

    Huang, Zhiming

    2018-02-01

    In this article, we investigate the dynamics and correlations of quantum-memory-assisted entropic uncertainty, the tightness of the uncertainty, entanglement, quantum correlation and mixedness for various spin chain models with Dzyaloshinskii-Moriya (DM) interaction, including the XXZ model with DM interaction, the XY model with DM interaction and the Ising model with DM interaction. We find that the uncertainty grows to a stable value with growing temperature but reduces as the coupling coefficient, anisotropy parameter and DM values increase. It is found that the entropic uncertainty is closely correlated with the mixedness of the system. The increasing quantum correlation can result in a decrease in the uncertainty, and the robustness of quantum correlation is better than entanglement since entanglement means sudden birth and death. The tightness of the uncertainty drops to zero, apart from slight volatility as various parameters increase. Furthermore, we propose an effective approach to steering the uncertainty by weak measurement reversal.

  17. Topological magnetoelectric memory effect in the spin-spiral multiferroic MnWO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Dennis; Leo, Naemi; Lottermoser, Thomas; Fiebig, Manfred [HISKP, Universitaet Bonn (Germany); Becker, Petra; Bohaty, Ladislav [Institut fuer Kristallographie, Universitaet zu Koeln (Germany)

    2010-07-01

    Within the field of multiferroics, i.e. compounds with coexisting magnetic and electric order, so-called spin-spiral ferroelectrics attract tremendous attention. In these systems magnetic long-range order violates the inversion symmetry and induces a spontaneous electric polarization. Magnetic and electric domains are thus rigidly coupled so that ''giant'' magnetoelectric effects are obtained. However, up to now nearly nothing is know about the topology of the domain state in these systems. We report spatially-resolved measurements of the multiferroic domain topology in MnWO{sub 4}. For the first time, the full three-dimensional domain structure in a spin-spiral system is imaged. Our study reveals that the multiferroic domains in magnetically-induced ferroelectrics unify features that are associated to a magnetic domain state and others that point unambiguously to ferroelectric domains. Hence, a description in terms of ferroelectric or antiferromagnetic domains is incomplete and no longer appropriate. The novel concept of ''multiferroic hybrid domains'' is introduced. Annealing cycles reveal a topological memory effect: Due to phase coexistence at one phase boundary limiting the multiferroic state in MnWO{sub 4}, the entire multiferroic multidomain state can be reconstructed subsequent to quenching it.

  18. Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.

    Science.gov (United States)

    Aradhya, S V; Rowlands, G E; Oh, J; Ralph, D C; Buhrman, R A

    2016-10-12

    We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to 10 -5 , using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for any spin-torque-driven magnetic memory geometry and corresponds to a characteristic time scale that is significantly shorter than predicted possible within a macrospin model for in-plane MTJs subject to thermal fluctuations at room temperature. Using micromagnetic simulations, we show that in the three-terminal spin-Hall devices the Oersted magnetic field generated by the pulse current strongly modifies the magnetic dynamics excited by the spin-Hall torque, enabling this unanticipated performance improvement. Our results suggest that in-plane MTJs controlled by Oersted-field-assisted spin-Hall torque are a promising candidate for both cache memory applications requiring high speed and for cryogenic memories requiring low write energies.

  19. Circuit Simulation of All-Spin Logic

    KAUST Repository

    Alawein, Meshal

    2016-05-01

    With the aggressive scaling of complementary metal-oxide semiconductor (CMOS) nearing an inevitable physical limit and its well-known power crisis, the quest for an alternative/augmenting technology that surpasses the current semiconductor electronics is needed for further technological progress. Spintronic devices emerge as prime candidates for Beyond CMOS era by utilizing the electron spin as an extra degree of freedom to decrease the power consumption and overcome the velocity limit connected with the charge. By using the nonvolatility nature of magnetization along with its direction to represent a bit of information and then manipulating it by spin-polarized currents, routes are opened for combined memory and logic. This would not have been possible without the recent discoveries in the physics of nanomagnetism such as spin-transfer torque (STT) whereby a spin-polarized current can excite magnetization dynamics through the transfer of spin angular momentum. STT have expanded the available means of switching the magnetization of magnetic layers beyond old classical techniques, promising to fulfill the need for a new generation of dense, fast, and nonvolatile logic and storage devices. All-spin logic (ASL) is among the most promising spintronic logic switches due to its low power consumption, logic-in-memory structure, and operation on pure spin currents. The device is based on a lateral nonlocal spin valve and STT switching. It utilizes two nanomagnets (whereby information is stored) that communicate with pure spin currents through a spin-coherent nonmagnetic channel. By using the well-known spin physics and the recently proposed four-component spin circuit formalism, ASL can be thoroughly studied and simulated. Previous attempts to model ASL in the linear and diffusive regime either neglect the dynamic characteristics of transport or do not provide a scalable and robust platform for full micromagnetic simulations and inclusion of other effects like spin Hall

  20. Possible Roles of Neural Electron Spin Networks in Memory and Consciousness

    CERN Document Server

    Hu, H P

    2004-01-01

    Spin is the origin of quantum effects in both Bohm and Hestenes quantum formulism and a fundamental quantum process associated with the structure of space-time. Thus, we have recently theorized that spin is the mind-pixel and developed a qualitative model of consciousness based on nuclear spins inside neural membranes and proteins. In this paper, we explore the possibility of unpaired electron spins being the mind-pixels. Besides free O2 and NO, the main sources of unpaired electron spins in neural membranes and proteins are transition metal ions and O2 and NO bound/absorbed to large molecules, free radicals produced through biochemical reactions and excited molecular triplet states induced by fluctuating internal magnetic fields. We show that unpaired electron spin networks inside neural membranes and proteins are modulated by action potentials through exchange and dipolar coupling tensors and spin-orbital coupling and g-factor tensors and perturbed by microscopically strong and fluctuating internal magnetic...

  1. Development of Fast Response SME TiNi Foam Torque Tubes, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I, Shape Change Technologies had developed a process to manufacture net shape TiNi foam torque tubes that demonstrated the shape memory effect. The torque...

  2. Unprecedented multi-stable spin crossover molecular material with two thermal memory channels.

    Science.gov (United States)

    Seredyuk, Maksym; Muñoz, M Carmen; Castro, Miguel; Romero-Morcillo, Tania; Gaspar, Ana B; Real, Jose Antonio

    2013-05-17

    Two in one: A new iron(II) complex with short alkyl substituents exhibits an unprecedented bimodal behavior governed by the coexistence of three phases: two structurally different low-spin phases and one high-spin phase. The compound features two distinct well-separated strong cooperative spin-crossover transitions by varying the scan rate (see graphic). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-09-01

    Full Text Available To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM, spin transfer torque RAM (STT-RAM, phase change RAM (PCM and embedded DRAM (eDRAM and 2D memories designed using spin orbit torque RAM (SOT-RAM, domain wall memory (DWM and Flash memory. In addition to single-level cell (SLC designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparshmittal/destinyv2.

  4. Distance measurements across randomly distributed nitroxide probes from the temperature dependence of the electron spin phase memory time at 240 GHz

    Science.gov (United States)

    Edwards, Devin T.; Takahashi, Susumu; Sherwin, Mark S.; Han, Songi

    2012-10-01

    At 8.5 T, the polarization of an ensemble of electron spins is essentially 100% at 2 K, and decreases to 30% at 20 K. The strong temperature dependence of the electron spin polarization between 2 and 20 K leads to the phenomenon of spin bath quenching: temporal fluctuations of the dipolar magnetic fields associated with the energy-conserving spin "flip-flop" process are quenched as the temperature of the spin bath is lowered to the point of nearly complete spin polarization. This work uses pulsed electron paramagnetic resonance (EPR) at 240 GHz to investigate the effects of spin bath quenching on the phase memory times (TM) of randomly-distributed ensembles of nitroxide molecules below 20 K at 8.5 T. For a given electron spin concentration, a characteristic, dipolar flip-flop rate (W) is extracted by fitting the temperature dependence of TM to a simple model of decoherence driven by the spin flip-flop process. In frozen solutions of 4-Amino-TEMPO, a stable nitroxide radical in a deuterated water-glass, a calibration is used to quantify average spin-spin distances as large as r¯=6.6 nm from the dipolar flip-flop rate. For longer distances, nuclear spin fluctuations, which are not frozen out, begin to dominate over the electron spin flip-flop processes, placing an effective ceiling on this method for nitroxide molecules. For a bulk solution with a three-dimensional distribution of nitroxide molecules at concentration n, we find W∝n∝1/r, which is consistent with magnetic dipolar spin interactions. Alternatively, we observe W∝n for nitroxides tethered to a quasi two-dimensional surface of large (Ø ˜ 200 nm), unilamellar, lipid vesicles, demonstrating that the quantification of spin bath quenching can also be used to discern the geometry of molecular assembly or organization.

  5. Robust quantum-network memory using decoherence-protected subspaces of nuclear spins

    NARCIS (Netherlands)

    Reiserer, A.A.; Kalb, N.; Blok, M.S.; van Bemmelen, Koen J M; Taminiau, T.H.; Hanson, R.; Twitchen, Daniel J.; Markham, Matthew

    2016-01-01

    The realization of a network of quantum registers is an outstanding challenge in quantum science and technology. We experimentally investigate a network node that consists of a single nitrogen-vacancy center electronic spin hyperfine coupled to nearby nuclear spins. We demonstrate individual

  6. High torque DC motor fabrication and test program

    Science.gov (United States)

    Makus, P.

    1976-01-01

    The testing of a standard iron and standard alnico permanent magnet two-phase, brushless dc spin motor for potential application to the space telescope has been concluded. The purpose of this study was to determine spin motor power losses, magnetic drag, efficiency and torque speed characteristics of a high torque dc motor. The motor was designed and built to fit an existing reaction wheel as a test vehicle and to use existing brass-board commutation and torque command electronics. The results of the tests are included in this report.

  7. Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Meiyu Stella [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Suresh, Vignesh [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Chan, Mei Yin [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Ma, Yu Wei [Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Lee, Pooi See [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Krishnamoorthy, Sivashankar [Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Science et Analyse des Materiaux Unit (SAM), Centre de Recherche Public-Gabriel Lippmann, 41, rue du Brill, Belvaux, 4422 (Luxembourg); Srinivasan, M.P., E-mail: srinivasan.madapusi@rmit.edu.au [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); School of Engineering, RMIT University, Building 10, Level 11, Room 14, 376-392 Swanston Street, Melbourne, Victoria, 3001 (Australia)

    2017-01-15

    A simple and low-cost process of embedding metal nanocrystals as charge storage centers within a dielectric is demonstrated to address leakage issues associated with the scaling of the tunnelling oxide in flash memories. Metal nanocrystals with high work functions (nickel, platinum and palladium) were prepared as embedded species in methyl siloxane spin-on-glass (SOG) films on silicon substrates. Sub-10 nm-sized, well-isolated, uniformly distributed, multi-layered nanocrystals with high particle densities (10{sup 11}–10{sup 12} cm{sup −2}) were formed in the films by thermal curing of the spin-coated SOG films containing the metal precursors. Capacitance-Voltage measurements performed on metal-insulator-semiconductor capacitors with the SOG films show that the presence of metal nanocrystals enhanced the memory window of the films to 2.32 V at low operating voltages of ±5 V. These SOG films demonstrated the ability to store both holes and electrons. Capacitance-time measurements show good charge retention of more than 75% after 10{sup 4} s of discharging. This work demonstrates the applicability of the low-cost in-situ sol-gel preparation in contrast to conventional methods that involve multiple and expensive processing steps. - Highlights: • Sub-10 nm sized, well-isolated, uniformly distributed nanoparticle based charge trap memories. • Preparation of multi-layer high work function metal nanocrystals at low cost. • Large memory window of 2.32 V at low operating voltages of ±5 V. • Good charge retention of more than 90% and 75% after 10{sup 3} and 10{sup 4} s of discharging respectively. • Use of a 3 nm thick tunnelling oxide in compliance with ITRS specifications.

  8. Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

    Directory of Open Access Journals (Sweden)

    Luís Vitório Cargnini

    2014-08-01

    Full Text Available Static random access memory (SRAM is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage current that is caused by the quantum tunneling effect. Magnetic random access memory (MRAM is a candidate technology to replace SRAM, assuming appropriate dimensioning given an operating threshold voltage. The write current of spin transfer torque (STT-MRAM is a known limitation; however, this has been recently mitigated by leveraging perpendicular magnetic tunneling junctions. In this article, we present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off policies and leakage current optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of embedded systems, due to the higher densities and reduced leakage of MRAM.We demonstrate that adopting STT-MRAM in L1 and L2 caches mitigates the impact of higher write latencies and increased current draw due to the use of MRAM. With the correct system-on-chip (SoC design, we believe that STT-MRAM is a viable alternative to SRAM, which minimizes leakage current and the total power consumed by the SoC.

  9. Magnetic Nanostructures Spin Dynamics and Spin Transport

    CERN Document Server

    Farle, Michael

    2013-01-01

    Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

  10. PREFACE: Emerging non-volatile memories: magnetic and resistive technologies Emerging non-volatile memories: magnetic and resistive technologies

    Science.gov (United States)

    Dieny, B.; Jagadish, Chennupati

    2013-02-01

    In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate field-effect transistor, nano-electro-mechanical switch, spin-transfer torque random access memories (STTRAM), various types of resistive RAM, in particular redox RAM, nanothermal phase change RAM, electronic effects RAM, macromolecular memories and molecular RAM). In this report, spin-transfer torque MRAM and redox RRAM were identified as two emerging memory technologies recommended for accelerated research and development leading to scaling and commercialization of non-volatile RAM to and beyond the 16nm generation. Nowadays, there is an intense research and development effort in microelectronics on these two technologies, one based on spintronic phenomena (tunnel magnetoresistance and spin-transfer torque), the other based on migration of vacancies or ions in an insulating matrix driven by oxydo-reduction potentials. Both technologies could be used for standalone or embedded applications. In this context, it appeared timely to publish a cluster of review articles related to these two technologies. In this cluster, the first two articles introduce the general principles of spin-transfer torque RAM and of thermally assisted RAM. The third presents a broader range of applications for this integrated CMOS/magnetic tunnel junction technology for low-power electronics. The fourth paper presents more advanced research on voltage control of magnetization switching with the aim of dramatically reducing the write energy in MRAM. The last two papers deal with two categories of resistive RAM, one based on the migration of cations, the other one based on nanowires. We thank all the authors and reviewers for their contribution to this cluster issue. Our special thanks are due to Dr Olivia Roche, Publisher, and Dr

  11. Torque ripple reduction in direct torque controlled five-phase ...

    Indian Academy of Sciences (India)

    The five-phase induction motor inherently has the minimal torque ripple. However, when it is controlled by direct torque control (DTC) technique, the torque ripple increases due to the presence of a hysteresis torque comparator. The classical five-level torque comparator is presented in the previous literatures to control the ...

  12. The effect of the melting spinning cooling rate on transformation temperatures in ribbons Ti-Ni-Cu shape memory

    International Nuclear Information System (INIS)

    Ramos, A.P.; Castro, W.B.; Anselmo, G.C. dos S.

    2014-01-01

    Ti-Ni-Cu alloys have been attracting attention by their high performance of shape memory effect and decrease of thermal and stress hysteresis in comparison with Ti-Ni binary alloys. One important challenge of microsystems design is the implementation of miniaturized actuation principles efficient at the micro-scale. Shape memory alloys (SMAs) have early on been considered as a potential solution to this problem as these materials offer attractive properties like a high-power to weight ratio, large deformation and the capability to be processed at the micro-scale. Shape memory characteristics of Ti-37,8Cu-18,7Ni alloy ribbons prepared by melt spinning were investigated by means of differential scanning calorimetry and X-ray diffraction. In these experiments particular attention has been paid to change of the velocity of cooling wheel from 21 to 63 m/s. Then the cooling rates of ribbons were controlled. The effect of this cooling rate on austenitic and martensitic transformations behaviors is discussed. (author)

  13. Introduction to magnetic random-access memory

    CERN Document Server

    Dieny, Bernard; Lee, Kyung-Jin

    2017-01-01

    Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic mat rials and devices. It presents the bas...

  14. Spin-orbitronics: A new moment for Berry

    KAUST Repository

    Manchon, Aurelien

    2014-04-13

    The standard description of spin-orbit torques neglects geometric phase effects. But recent experiments suggest that the Berry curvature gives rise to an anti-damping torque in systems with broken inversion symmetry.

  15. Angular Acceleration without Torque?

    Science.gov (United States)

    Kaufman, Richard D.

    2012-01-01

    Hardly. Just as Robert Johns qualitatively describes angular acceleration by an internal force in his article "Acceleration Without Force?" here we will extend the discussion to consider angular acceleration by an internal torque. As we will see, this internal torque is due to an internal force acting at a distance from an instantaneous center.

  16. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  17. Theory of magnetic-field-induced polarization flop in spin-spiral multiferroics

    Science.gov (United States)

    Mochizuki, Masahito

    2015-12-01

    The magnetic-field-induced 90∘ flop of ferroelectric polarization P in a spin-spiral multiferroic material TbMnO3 is theoretically studied based on a microscopic spin model. I find that the direction of the P flop or the choice of +Pa or -Pa after the flop is governed by magnetic torques produced by the applied magnetic field H acting on the Mn spins and thus is selected in a deterministic way, in contradistinction to the naively anticipated probabilistic flop. This mechanism resolves a puzzle of the previously reported memory effect in the P direction depending on the history of the magnetic-field sweep, and enables controlled switching of multiferroic domains by externally applied magnetic fields. My Monte-Carlo analysis also uncovers that the magnetic structure in the P ∥a phase under H ∥b is not a previously anticipated simple a b -plane spin cycloid but a conical spin structure.

  18. Metastable 1/3 magnetization plateau and memory effects in spin-chain compound α-CoV{sub 2}O{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.C.; Shu, H. [Huazhong University of Science and Technology, Wuhan National High Magnetic Field Center, Wuhan (China); Huazhong University of Science and Technology, School of Physics, Wuhan (China); Ouyang, Z.W.; Xia, Z.C. [Huazhong University of Science and Technology, Wuhan National High Magnetic Field Center, Wuhan (China); Rao, Guanghui [Guilin University of Electronic Technology, School of Materials Science and Engineering, Guilin (China)

    2016-09-15

    We demonstrate the metastable 1/3 magnetization plateau and memory effect in Ising spin-chain system α-CoV{sub 2}O{sub 6} by magnetic relaxation measurements. The metastability of magnetization plateau below 8 K (memory effect is observed below 8 K in nanocrystals, which is absent in the bulk material. The amazing memory effect can be described by the phenomenological hierarchical model, and its origin is due to spin-glass-like freezing arising from complicated competing interactions associated with core and shell, according the core-shell model of antiferromagnetic nanoparticles. (orig.)

  19. Intrinsic nonadiabatic topological torque in magnetic skyrmions and vortices

    KAUST Repository

    Akosa, Collins Ashu

    2017-03-01

    We propose that topological spin currents flowing in topologically nontrivial magnetic textures, such as magnetic skyrmions and vortices, produce an intrinsic nonadiabatic torque of the form Tt∼[(∂xm×∂ym)·m]∂ym. We show that this torque, which is absent in one-dimensional domain walls and/or nontopological textures, is responsible for the enhanced nonadiabaticity parameter observed in magnetic vortices compared to one-dimensional textures. The impact of this torque on the motion of magnetic skyrmions is expected to be crucial, especially to determine their robustness against defects and pinning centers.

  20. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

    International Nuclear Information System (INIS)

    Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

    2015-01-01

    We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

  1. Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

    Directory of Open Access Journals (Sweden)

    Joseph Sklenar

    2016-05-01

    Full Text Available We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

  2. Optical torque on a magneto-dielectric Rayleigh absorptive sphere by a vector Bessel (vortex) beam

    Science.gov (United States)

    Li, Renxian; Yang, Ruiping; Ding, Chunying; Mitri, F. G.

    2017-04-01

    The optical torque exerted on an absorptive megneto-dielectric sphere by an axicon-generated vector Bessel (vortex) beam with selected polarizations is investigated in the framework of the dipole approximation. The total optical torque is expressed as the sum of orbital and spin torques. The axial orbital torque component is calculated from the z-component of the cross-product of the vector position r and the optical force exerted on the sphere F. Depending on the beam characteristics (such as the half-cone angle and polarization type) and the physical properties of the sphere, it is shown here that the axial orbital torque vanishes before reversing sign, indicating a counter-intuitive orbital motion in opposite handedness of the angular momentum carried by the incident waves. Moreover, analytical formulas for the spin torque, which is divided into spin torques induced by electric and magnetic dipoles, are derived. The corresponding components of both the optical spin and orbital torques are numerically calculated, and the effects of polarization, the order of the beam, and half-cone angle are discussed in detail. The left-handed (i.e., negative) optical torque is discussed, and the conditions for generating optical spin and orbital torque sign reversal are numerically investigated. The transverse optical spin torque has a vortex-like character, whose direction depends on the polarization, the half-cone angle, and the order of the beam. Numerical results also show that the vortex direction depends on the radial position of the particle in the transverse plane. This means that a sphere may rotate with different directions when it moves radially. Potential applications are in particle manipulation and rotation, single beam optical tweezers, and other emergent technologies using vector Bessel beams on a small magneto-dielectric (nano) particle.

  3. Proposal for a graphene-based all-spin logic gate

    Science.gov (United States)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

    2015-02-01

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

  4. Proposal for a graphene-based all-spin logic gate

    International Nuclear Information System (INIS)

    Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud; Zhang, Youguang

    2015-01-01

    In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (∼μm), higher data throughput, faster computing speed (∼ns), and lower power consumption (∼μA) can be expected from the G-ASLG

  5. Spin glasses (II)

    International Nuclear Information System (INIS)

    Fischer, K.H.

    1985-01-01

    Experimental results of spin glass studies are reviewed and related to existing theories. Investigations of spin glasses are concentrated on atomic structure, metallurgical treatment, and high-temperature susceptibility of alloys, on magnetic properties at low temperature and near the freezing temperature, on anisotropy behaviour measured by ESR, NMR and torque, on specific heat, Moessbauer effect, neutron scattering and muon-spin depolarization experiments, ultrasound and transport properties. Some new theories of spin glasses are discussed which have been developed since Part I appeared

  6. Multilevel SOT-MRAM Cell with a Novel Sensing Scheme for High-Density Memory Applications

    DEFF Research Database (Denmark)

    Zeinali, Behzad; Esmaeili, Mahsa; Madsen, Jens Kargaard

    2017-01-01

    in high-density memory application. To deal with this obstacle, we propose a multilevel cell which stores two bits per memory cell. In addition, we propose a novel sensing scheme to read out the stored data in the multilevel SOT-MRAM cell. Our simulation results show that the proposed cell can achieve 3X......This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOTMRAMs can be questioned...

  7. Generation of Light with Multimode Time-Delayed Entanglement Using Storage in a Solid-State Spin-Wave Quantum Memory.

    Science.gov (United States)

    Ferguson, Kate R; Beavan, Sarah E; Longdell, Jevon J; Sellars, Matthew J

    2016-07-08

    Here, we demonstrate generating and storing entanglement in a solid-state spin-wave quantum memory with on-demand readout using the process of rephased amplified spontaneous emission (RASE). Amplified spontaneous emission (ASE), resulting from an inverted ensemble of Pr^{3+} ions doped into a Y_{2}SiO_{5} crystal, generates entanglement between collective states of the praseodymium ensemble and the output light. The ensemble is then rephased using a four-level photon echo technique. Entanglement between the ASE and its echo is confirmed and the inseparability violation preserved when the RASE is stored as a spin wave for up to 5  μs. RASE is shown to be temporally multimode with almost perfect distinguishability between two temporal modes demonstrated. These results pave the way for the use of multimode solid-state quantum memories in scalable quantum networks.

  8. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  9. Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

    International Nuclear Information System (INIS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-01-01

    Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

  10. Memory.

    Science.gov (United States)

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  11. Convergence of high order memory kernels in the Nakajima-Zwanzig generalized master equation and rate constants: Case study of the spin-boson model

    Science.gov (United States)

    Xu, Meng; Yan, Yaming; Liu, Yanying; Shi, Qiang

    2018-04-01

    The Nakajima-Zwanzig generalized master equation provides a formally exact framework to simulate quantum dynamics in condensed phases. Yet, the exact memory kernel is hard to obtain and calculations based on perturbative expansions are often employed. By using the spin-boson model as an example, we assess the convergence of high order memory kernels in the Nakajima-Zwanzig generalized master equation. The exact memory kernels are calculated by combining the hierarchical equation of motion approach and the Dyson expansion of the exact memory kernel. High order expansions of the memory kernels are obtained by extending our previous work to calculate perturbative expansions of open system quantum dynamics [M. Xu et al., J. Chem. Phys. 146, 064102 (2017)]. It is found that the high order expansions do not necessarily converge in certain parameter regimes where the exact kernel show a long memory time, especially in cases of slow bath, weak system-bath coupling, and low temperature. Effectiveness of the Padé and Landau-Zener resummation approaches is tested, and the convergence of higher order rate constants beyond Fermi's golden rule is investigated.

  12. Overview of emerging nonvolatile memory technologies.

    Science.gov (United States)

    Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  13. Torque and optical traps

    African Journals Online (AJOL)

    STORAGESEVER

    2008-12-29

    Dec 29, 2008 ... Optical traps are an important tool for research in the field of single molecule biophysics. Recent advances in optical trapping have extended their functionality from simple linear manipulation and measurement of forces, to now the ability to rotate objects and measure torques. This mini review summarizes ...

  14. Large Torque Variations in Two Soft Gamma Repeaters

    NARCIS (Netherlands)

    Woods, P.M.; Kouveliotou, C.; Göğüş, E.; Finger, M.H.; Swank, J.; Markwardt, C.B.; Hurley, K.; van der Klis, M.

    2002-01-01

    We have monitored the pulse frequencies of the two soft gamma repeaters SGR 1806-20 and SGR 1900+14 through the beginning of year 2001 using primarily Rossi X-Ray Timing Explorer Proportional Counter Array observations. In both sources, we observe large changes in the spin-down torque up to a factor

  15. Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy

    Science.gov (United States)

    Nguyen, Minh-Hai; Shi, Shengjie; Rowlands, Graham E.; Aradhya, Sriharsha V.; Jermain, Colin L.; Ralph, D. C.; Buhrman, R. A.

    2018-02-01

    Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies.

  16. Distinguishing between coherent magnetization rotation and generation of incoherent spin waves in a spin-transfer effect experiment

    Science.gov (United States)

    Bazaliy, Yaroslaw; Jones, Barbara

    2002-03-01

    Electric current flowing from one metallic ferromagnet to another induces an interaction between them [1,2]. This interaction is qualitatively different from the one observed in equilibrium and creates a so-called ``spin-transfer'' torque - a subject of recent interest in the field of spintronics. Technologically spin-transfer effect is very interesting due to its possible usefulness for the memory writing process based on ``current induced switching" in metallic magnetic structures. Physics of spin-transfer torque involves interesting issues of spin-injection, spin-accumulation and excitation of different types of magnetic modes in the ferromagnets. The result of spin-transfer torque action depends on which magnetic mode is most easily excited by the spin-polarized current. Currently there are two views on the nature of this mode. In one approach [1] it is assumed that a coherent rotation of magnetization is induced and in the other [2,3] - that incoherent spin waves are generated. While in a real experiment both modes are probably excited at the same time, intuitively it seems natural that coherent rotation is more likely to happen when the angle between injected spins and magnetization is large. On the contrary in a collinear case spin-wave generation is more likely to happen. In the experiments done so far [4] the effect of spin-transfer torque was studied in the collinear setup. In [5] we applied the general approach of Ref.1 to this experiment and were able to give exact predictions for the particular magnetic anisotropy of the experiment [4]. While those predictions do not completely agree with the experimental results, a theory based on spin-wave generation [6] also seems to be ruled out by [4]. Here we propose a relatively easy modification of experiment [4] in which the spin-polarization of incoming current is no longer collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with experiment will

  17. Observation of the Spin Peltier Effect for Magnetic Insulators

    NARCIS (Netherlands)

    Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.

    2014-01-01

    We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin

  18. Butterfly valve torque prediction methodology

    International Nuclear Information System (INIS)

    Eldiwany, B.H.; Sharma, V.; Kalsi, M.S.; Wolfe, K.

    1994-01-01

    As part of the Motor-Operated Valve (MOV) Performance Prediction Program, the Electric Power Research Institute has sponsored the development of methodologies for predicting thrust and torque requirements of gate, globe, and butterfly MOVs. This paper presents the methodology that will be used by utilities to calculate the dynamic torque requirements for butterfly valves. The total dynamic torque at any disc position is the sum of the hydrodynamic torque, bearing torque (which is induced by the hydrodynamic force), as well as other small torque components (such as packing torque). The hydrodynamic torque on the valve disc, caused by the fluid flow through the valve, depends on the disc angle, flow velocity, upstream flow disturbances, disc shape, and the disc aspect ratio. The butterfly valve model provides sets of nondimensional flow and torque coefficients that can be used to predict flow rate and hydrodynamic torque throughout the disc stroke and to calculate the required actuation torque and the maximum transmitted torque throughout the opening and closing stroke. The scope of the model includes symmetric and nonsymmetric discs of different shapes and aspects ratios in compressible and incompressible fluid applications under both choked and nonchoked flow conditions. The model features were validated against test data from a comprehensive flowloop and in situ test program. These tests were designed to systematically address the effect of the following parameters on the required torque: valve size, disc shapes and disc aspect ratios, upstream elbow orientation and its proximity, and flow conditions. The applicability of the nondimensional coefficients to valves of different sizes was validated by performing tests on 42-in. valve and a precisely scaled 6-in. model. The butterfly valve model torque predictions were found to bound test data from the flow-loop and in situ testing, as shown in the examples provided in this paper

  19. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  20. Single-passage read-out of atomic quantum memory

    DEFF Research Database (Denmark)

    Fiurasek, J; Sherson, J; Opatrny, T

    2005-01-01

    Retrieving quantum information, collective atomic spin systems, quantum memory Udgivelsesdato: 17 Feb.......Retrieving quantum information, collective atomic spin systems, quantum memory Udgivelsesdato: 17 Feb....

  1. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer

    2017-03-14

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  2. Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

    Science.gov (United States)

    Sukachev, D. D.; Sipahigil, A.; Nguyen, C. T.; Bhaskar, M. K.; Evans, R. E.; Jelezko, F.; Lukin, M. D.

    2017-12-01

    The negatively charged silicon-vacancy (SiV- ) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (˜250 ns ) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV- electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV- symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV- spin with 89% fidelity. Coherent control of the SiV- spin with microwave fields is used to demonstrate a spin coherence time T2 of 13 ms and a spin relaxation time T1 exceeding 1 s at 100 mK. These results establish the SiV- as a promising solid-state candidate for the realization of quantum networks.

  3. Manual Torque Data Study

    Energy Technology Data Exchange (ETDEWEB)

    Mundt, Mark Osroe [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Martinez, Matthew Ronald [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Varela, Jeanette Judith [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Anderson-Cook, Christine Michaela [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gilmore, Walter E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Williams, Allie [Pantex Plant (PTX), Amarillo, TX (United States)

    2018-01-11

    At the Pantex Plant in Amarillo, TX, Production Technicians (PTs) build and disassemble nuclear weapon systems. The weapons are held in an integrated work stand for stability and to increase the safety environment for the workers and for the materials being processed. There are many occasions in which a knob must be turned to tighten an assembly part. This can help to secure or manipulate pieces of the system. As there are so many knobs to turn, the instructions given to the PTs are to twist the knob to a hand-tight setting, without the aid of a torque wrench. There are inherent risks in this procedure as the knobs can be tightened too loosely such that the apparatus falls apart or too tightly such that the force can crush or pinch components in the system that contain energetic materials. We want to study these operations at Pantex. Our goal is to collect torque data to assess the safety and reliability of humantooling interfaces.

  4. Towards building a prototype spin-logic device

    Science.gov (United States)

    Penumatcha, Ashish Verma

    Since the late 1980s, several key discoveries, such as Giant and Tunneling Magne- toresistance, and advances in magnetic materials have paved the way for exponentially higher bit-densities in magnetic storage. In particular, the discovery of Spin-Transfer Torque (STT) has allowed information to be written to individual magnets using spin-currents. This has replaced the more traditional Oersted-field control used in field-MRAMs and allowed further scaling of magnetic-memories. A less obvious con- sequence of STT is that it has made possible a logic-technology based on magnets controlled by spin-polarized currents. Charge-coupled Spin Logic (CSL) is one such device proposal that couples a giant spin Hall effect(GSHE) write-unit with a Mag- netic Tunnel Junction read-unit. Several theoretical reports have demonstrated that a CSL-style device can function as a fundamental building block for neuromorphic computing by harnessing the intrinsic properties of magnets. This thesis describes the working of a CSL device. Experimental progress towards building the individual components of CSL and also our efforts to integrate these components into a CSL prototype will be presented. In addition to the integration effort, this work also explores spin-injection from a GSHE metal to a nanoscale magnet through an intermediate non-magnetic metal. Our results indicate that with the right choice of intermediate layers, the spin-angular mo- mentum absorbed by the magnet can be increased without engineering the intrinsic spin Hall angle of the GSHE metal. Finally, this work also proposes a Schottky-barrier model to describe the current flow through low-dimensional semiconductors and uses it to extract the band gap of black-phosphorus thin-films in an attempt to characterize novel 2D-materials.

  5. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  6. Excitation and Transmitted Torque

    Directory of Open Access Journals (Sweden)

    H. B. H. Gubran

    2000-01-01

    Full Text Available In the present study, stress analysis of fiber reinforced thin composite shafts subjected to unbalance excitation and steady torque, is carried out. Shafts of uniform as well as variable wall thickness are considered. The shaft is modeled as a simply supported Timoshenko beam in which shear deformation, rotary inertia and gyroscopic effects have been included. Modified equivalent modulus beam theory has been adopted. Rayleigh-Ritz displacements are used for deriving the solution equations. Shafts with a uniform wall thickness, and with variable wall thickness in which the thickness is varied along the axial length of the shaft for three different cases of fiber angles have been studied. Axial variation of stresses is studied in detail. Results obtained indicate that the stresses in the variable wall thickness are smaller than the one with uniform wall thickness, even for the same weight of the shaft.

  7. Hybrid synchronous motor electromagnetic torque research

    Directory of Open Access Journals (Sweden)

    Suvorkova Elena E.

    2014-01-01

    Full Text Available Electromagnetic field distribution models in reluctance and permanent magnet parts were made by means of Elcut. Dependences of electromagnetic torque on torque angle were obtained.

  8. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  9. Electrical torques on the electrostatic gyro in the gyro relativity experiment

    Science.gov (United States)

    Eby, P.; Darbo, W.

    1980-10-01

    A comprehensive discussion and calculation of electrical torques on an electrostatic gyro as they relate to the gyroscope experiment to test general relativity is presented. Drift rates were computed for some typical state of the art rotors, including higher harmonics in the rotor shape. The effect of orbital averaging of gravity gradient forces, roll averaging of torques, and the effect of spin averaging on the effective shape of the rotor were considered. The electrical torques are reduced sufficiently in a low g environment to permit a measurement of the relativistic drifts predicted by general relativity.

  10. PREFACE: Spin Electronics

    Science.gov (United States)

    Dieny, B.; Sousa, R.; Prejbeanu, L.

    2007-04-01

    tunnel junctions were introduced as memory elements in new types of non-volatile magnetic memories (MRAM). A first 4Mbit product was launched by Freescale in July 2006. Future generations of memories are being developed by academic groups or companies. the combination of magnetic elements with CMOS components opens a whole new paradigm in hybrid electronic components which can change the common conception of the architecture of complex electronic components with a much tighter integration of logic and memory. the steady magnetic excitations stimulated by spin-transfer might be used in a variety of microwave components provided the output power can be increased. Intense research and development efforts are being aimed at increasing this power by the synchronization of oscillators. The articles compiled in this special issue of Journal of Physics: Condensed Matter, devoted to spin electronics, review these recent developments. All the contributors are greatly acknowledged.

  11. Few-nanosecond pulse switching with low write error for in-plane nanomagnets using the spin-Hall effect

    Science.gov (United States)

    Aradhya, Sriharsha; Rowlands, Graham; Shi, Shengjie; Oh, Junseok; Ralph, D. C.; Buhrman, Robert

    Magnetic random access memory (MRAM) using spin transfer torques (STT) holds great promise for replacing existing best-in-class memory technologies in several application domains. Research on conventional two-terminal STT-MRAM thus far has revealed the existence of limitations that constrain switching reliability and speed for both in-plane and perpendicularly magnetized devices. Recently, spin torque arising from the giant spin-Hall effect in Ta, W and Pt has been shown to be an efficient mechanism to switch magnetic bits in a three-terminal geometry. Here we report highly reliable, nanosecond timescale pulse switching of three-terminal devices with in-plane magnetized magnetic tunnel junctions. We obtain write error rates (WER) down to ~10-5 using pulses as short as 2 ns, in contrast to conventional in-plane STT-MRAM devices where write speeds were limited to a few tens of nanoseconds for comparable WER. Utilizing micro-magnetic simulations, we discuss the differences from conventional MRAM that allow for this unanticipated and significant performance improvement. Finally, we highlight the path towards practical application enabled by the ability to separately optimize the read and write pathways in three-terminal devices.

  12. Zero torque gear head wrench

    Science.gov (United States)

    Mcdougal, A. R.; Norman, R. M. (Inventor)

    1976-01-01

    A gear head wrench particularly suited for use in applying torque to bolts without transferring torsional stress to bolt-receiving structures is introduced. The wrench is characterized by a coupling including a socket, for connecting a bolt head with a torque multiplying gear train, provided within a housing having an annulus concentrically related to the socket and adapted to be coupled with a spacer interposed between the bolt head and the juxtaposed surface of the bolt-receiving structure for applying a balancing counter-torque to the spacer as torque is applied to the bolt head whereby the bolt-receiving structure is substantially isolated from torsional stress. As a result of the foregoing, the operator of the wrench is substantially isolated from any forces which may be imposed.

  13. Torque-Summing Brushless Motor

    Science.gov (United States)

    Vaidya, J. G.

    1986-01-01

    Torque channels function cooperatively but electrically independent for reliability. Brushless, electronically-commutated dc motor sums electromagnetic torques on four channels and applies them to single shaft. Motor operates with any combination of channels and continues if one or more of channels fail electrically. Motor employs single stator and rotor and mechanically simple; however, each of channels electrically isolated from other so that failure of one does not adversely affect others.

  14. Spin Transport in Ferromagnetic and Antiferromagnetic Textures

    KAUST Repository

    Akosa, Collins A.

    2016-12-07

    In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

  15. 14 CFR 27.361 - Engine torque.

    Science.gov (United States)

    2010-01-01

    ... turbine engines, the limit torque may not be less than the highest of— (1) The mean torque for maximum... compressor jamming). (b) For reciprocating engines, the limit torque may not be less than the mean torque for maximum continuous power multiplied by— (1) 1.33, for engines with five or more cylinders; and (2) Two...

  16. Magnonic Charge Pumping via Spin-Orbit Coupling

    Science.gov (United States)

    Ciccarelli, Chiara; Hals, Kjetil; Irvine, Andrew; Novak, Vit; Tserkovnyak, Yaroslav; Kurebayashi, Hidekazu; Brataas, Arne; Ferguson, Andrew

    2015-03-01

    The interplay between spin, charge and orbital degrees of freedom has led to the development of spintronic devices such as spin-torque oscillators and spin-transfer torque MRAM. In this development, spin pumping represents a convenient way to electrically detect magnetization dynamics. The effect originates from direct conversion of low-energy quantized spin waves in the magnet, known as magnons, into a flow of spins from the precessing magnet to adjacent leads. In this case, a secondary spin-charge conversion element, such as heavy metals with large spin Hall angle or multilayer layouts, is required to convert the spin current into a charge signal. Here, we report the observation of charge pumping in which a precessing ferromagnet pumps a charge current, demonstrating direct conversion of magnons into high-frequency currents via spin-orbit interaction. The generated electric current, unlike spin currents generated by spin-pumping, can be directly detected without the need of any additional spin-charge conversion mechanism. The charge-pumping phenomenon is generic and gives a deeper understanding of its reciprocal effect, the spin orbit torque, which is currently attracting interest for their potential in manipulating magnetic information.

  17. An Air Bearing Balance with 1-DOF Spin Capability

    National Research Council Canada - National Science Library

    Magill, J. C; McManus, K. R; Malonson, M. R; Ziehler, J. A; Hinds, M. F

    1998-01-01

    .... Five load components are measured by sensing pressures in the air bearing film. The sixth component - rolling torque - is determined by sensing the current needed by the brushless spin motor to maintain a given rotation rate...

  18. Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

    Directory of Open Access Journals (Sweden)

    X. G. Li

    2016-01-01

    Full Text Available As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

  19. Spin caloritronics, origin and outlook

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)

    2017-03-03

    Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

  20. Effect of Filament Fineness on Composite Yarn Residual Torque

    Directory of Open Access Journals (Sweden)

    Sarıoğlu Esin

    2018-03-01

    Full Text Available Yarn residual torque or twist liveliness occurs when the twist is imparted to spin the fibers during yarn formation. It causes yarn snarling, which is an undesirable property and can lead the problems for further processes such as weaving and knitting. It affects the spirality of knitted fabrics and skewness of woven fabrics. Generally, yarn residual torque depends on yarn twist, yarn linear density, and fiber properties used. Composite yarns are widely produced to exploit two yarns with different properties such on optimum way at the same time and these yarns can be produced by wrapping sheath fibers around filament core fiber with a certain twist. In this study, the effect of filament fineness used as core component of composite yarn on residual torque was analyzed. Thus, the false twist textured polyester filament yarns with different filament fineness were used to produce composite yarns with different yarn count. The variance analysis was performed to determine the significance of twist liveliness of filament yarns and yarn count on yarn twist liveliness. Results showed that there is a statistically significant differences at significance level of α=0.05 between filament fineness and yarn residual torque of composite yarns.

  1. Theory of high-resolution tunneling spin transport on a magnetic skyrmion

    OpenAIRE

    Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

    2018-01-01

    Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

  2. Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

    KAUST Repository

    Ndiaye, Papa Birame

    2017-10-31

    In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

  3. Tunable spin-charge conversion through topological phase transitions in zigzag nanoribbons

    KAUST Repository

    Li, Hang

    2016-06-29

    We study spin-orbit torques and charge pumping in magnetic quasi-one-dimensional zigzag nanoribbons with a hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences a topological phase transition from a trivial band insulator to a quantum spin Hall insulator by tuning of either the magnetization direction or the intrinsic spin-orbit coupling. We find that the spin-charge conversion efficiency (i.e., spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.

  4. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  5. Torque ripple reduction in direct torque controlled five-phase ...

    Indian Academy of Sciences (India)

    Yogesh Tatte

    MS received 4 May 2016; revised 25 April 2017; accepted 3 June 2017; published online 7 February 2018. Abstract. ...... The data and parameters of the machine are depicted in table 3. Figures 6 and 7 summarize the performance of five- phase IM controlled by DTC method with the classical five- level torque comparator ...

  6. Unidirectional spin-Hall and Rashba-Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures.

    Science.gov (United States)

    Lv, Yang; Kally, James; Zhang, Delin; Lee, Joon Sue; Jamali, Mahdi; Samarth, Nitin; Wang, Jian-Ping

    2018-01-09

    The large spin-orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments. However, memory or logic spin devices based upon such switching require a non-optimal three-terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two-terminal device geometry is now possible by exploiting the recent discovery of the unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and unidirectional magnetoresistance in magnetic topological insulators. Here, we report the observation of such unidirectional magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure of merit (magnetoresistance per current density per total resistance) that is more than twice as large as the highest reported values in all-metal Ta/Co bilayers.

  7. Friction torque in thrust ball bearings grease lubricated

    Science.gov (United States)

    Ianuş, G.; Dumitraşcu, A. C.; Cârlescu, V.; Olaru, D. N.

    2016-08-01

    The authors investigated experimentally and theoretically the friction torque in a modified thrust ball bearing having only 3 balls operating at low axial load and lubricated with NGLI-00 and NGLI-2 greases. The experiments were made by using spin-down methodology and the results were compared with the theoretical values based on Biboulet&Houpert's rolling friction equations. Also, the results were compared with the theoretical values obtained with SKF friction model adapted for 3 balls. A very good correlation between experiments and Biboulet_&_Houpert's predicted results was obtained for the two greases. Also was observed that the theoretical values for the friction torque calculated with SKF model adapted for a thrust ball bearing having only 3 balls are smaller that the experimental values.

  8. New memory devices based on the proton transfer process

    International Nuclear Information System (INIS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

  9. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  10. Performance of synthetic antiferromagnetic racetrack memory: domain wall versus skyrmion

    KAUST Repository

    Tomasello, R

    2017-06-20

    A storage scheme based on racetrack memory, where the information can be coded in a domain or a skyrmion, seems to be an alternative to conventional hard disk drive for high density storage. Here, we perform a full micromagnetic study of the performance of synthetic antiferromagnetic (SAF) racetrack memory in terms of velocity and sensitivity to defects by using experimental parameters. We find that, to stabilize a SAF skyrmion, the Dzyaloshinskii–Moriya interaction in the top and the bottom ferromagnet should have an opposite sign. The velocity of SAF skyrmions and SAF Néel domain walls are of the same order and can reach values larger than 1200 m s−1 if a spin–orbit torque from the spin-Hall effect with opposite sign is applied to both ferromagnets. The presence of disordered anisotropy in the form of randomly distributed grains introduces a threshold current for both SAF skyrmions and SAF domain walls motions.

  11. Imaging Spin Dynamics on the Nanoscale using X-Ray Microscopy

    Directory of Open Access Journals (Sweden)

    Hermann eStoll

    2015-04-01

    Full Text Available The dynamics of emergent magnetic quasiparticles, such as vortices, domain walls, and bubbles are studied by scanning transmission x-ray microscopy (STXM, combining magnetic (XMCD contrast with about 25 nm lateral resolution as well as 70 ps time resolution. Essential progress in the understanding of magnetic vortex dynamics is achieved by vortex core reversal observed by sub-GHz excitation of the vortex gyromode, either by ac magnetic fields or spin transfer torque. The basic switching scheme for this vortex core reversal is the generation of a vortex-antivortex pair. Much faster vortex core reversal is obtained by exciting azimuthal spin wave modes with (multi-GHz rotating magnetic fields or orthogonal monopolar field pulses in x and y direction, down to 45 ps in duration. In that way unidirectional vortex core reversal to the vortex core 'down' or 'up' state only can be achieved with switching times well below 100 ps. Coupled modes of interacting vortices mimic crystal properties. The individual vortex oscillators determine the properties of the ensemble, where the gyrotropic mode represents the fundamental excitation. By self-organized state formation we investigate distinct vortex core polarization configurations and understand these eigenmodes in an extended Thiele model. Analogies with photonic crystals are drawn. Oersted fields and spin-polarized currents are used to excite the dynamics of domain walls and magnetic bubbles. From the measured phase and amplitude of the displacement of domain walls we deduce the size of the non-adiabatic spin-transfer torque. For sensing applications, the displacement of domain walls is studied and a direct correlation between domain wall velocity and spin structure is found. Finally the synchronous displacement of multiple domain walls using perpendicular field pulses is demonstrated as a possible paradigm shift for magnetic memory and logic applications.

  12. Toroidal field coil torque structure

    International Nuclear Information System (INIS)

    Gaines, A.L.

    1983-01-01

    A torque structure is disclosed particularly suitable for utilization in a power reactor of the Tokamak-type, and operable therein for purposes of providing support for the toroidal field (TF) coils that comprise one of the major operating components of such a Tokamak power reactor. The subject torque structure takes the form of a frame structure that is operable to enable torque loads acting on the TF coils to be equilibrated as close to the area of force application as feasible. The aforesaid torque structure includes an intercoil structure composed of spacer wedges that are interposed between each adjacent pair of TF coils. The spacer wedges, in turn, consist of bearing plates positioned between the TF coils so as to be in contacting relation therewith and a number of cross plates that are cooperatively associated with the bearing plates so as to form therewith a rigid assembly. The intercoil structure is affixed to a segmented, membrane shell that surrounds, encloses and supports the TF coil frames. Access is had to the interior of the shell through an opening formed for this purpose in a reinforced portion of the shell. Eddy current losses are minimized by insulating the joints formed at the juncture of adjoining segments of the shell

  13. Nonlocal torque operators in ab initio theory of the Gilbert damping in random ferromagnetic alloys

    Czech Academy of Sciences Publication Activity Database

    Turek, Ilja; Kudrnovský, Josef; Drchal, Václav

    2015-01-01

    Roč. 92, č. 21 (2015), 214407-1-214407-11 ISSN 1098-0121 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 ; RVO:68378271 Keywords : magnetic damping * spin torque Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  14. 14 CFR 29.361 - Engine torque.

    Science.gov (United States)

    2010-01-01

    ... mean torque for maximum continuous power multiplied by 1.25; (2) The torque required by § 29.923; (3... for maximum continuous power multiplied by— (1) 1.33, for engines with five or more cylinders; and (2...

  15. Universal Mechanism of Spin Relaxation in Solids

    Science.gov (United States)

    Chudnovsky, Eugene

    2006-03-01

    Conventional elastic theory ignores internal local twists and torques. Meantime, spin-lattice relaxation is inherently coupled with local elastic twists through conservation of the total angular momentum (spin + lattice). This coupling gives universal lower bound (free of fitting parameters) on the relaxation of the atomic or molecular spin in a solid [1] and on the relaxation of the electron spin in a quantum dot [2]. [1] E. M. Chudnovsky, D. A. Garanin, and R. Schilling, Phys. Rev. B 72, 094426 (2005). [2] C. Calero, E. M. Chudnovsky, and D. A. Garanin, Phys. Rev. Lett. 95, 166603 (2005).

  16. A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Sparsh Mittal

    2017-02-01

    Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

  17. Computerized Torque Control for Large dc Motors

    Science.gov (United States)

    Willett, Richard M.; Carroll, Michael J.; Geiger, Ronald V.

    1987-01-01

    Speed and torque ranges in generator mode extended. System of shunt resistors, electronic switches, and pulse-width modulation controls torque exerted by large, three-phase, electronically commutated dc motor. Particularly useful for motor operating in generator mode because it extends operating range to low torque and high speed.

  18. Calibration of the optical torque wrench

    NARCIS (Netherlands)

    Pedaci, F.; Huang, Z.; Van Oene, M.; Dekker, N.H.

    2012-01-01

    The optical torque wrench is a laser trapping technique that expands the capability of standard optical tweezers to torque manipulation and measurement, using the laser linear polarization to orient tailored microscopic birefringent particles. The ability to measure torque of the order of kBT (?4 pN

  19. Measuring the uncertainty of tapping torque

    DEFF Research Database (Denmark)

    Belluco, Walter; De Chiffre, Leonardo

    An uncertainty budget is carried out for torque measurements performed at the Institut for Procesteknik for the evaluation of cutting fluids. Thirty test blanks were machined with one tool and one fluid, torque diagrams were recorded and the repeatability of single torque measurements was estimat...

  20. Spin-resolved electron waiting times in a quantum-dot spin valve

    Science.gov (United States)

    Tang, Gaomin; Xu, Fuming; Mi, Shuo; Wang, Jian

    2018-04-01

    We study the electronic waiting-time distributions (WTDs) in a noninteracting quantum-dot spin valve by varying spin polarization and the noncollinear angle between the magnetizations of the leads using the scattering matrix approach. Since the quantum-dot spin valve involves two channels (spin up and down) in both the incoming and outgoing channels, we study three different kinds of WTDs, which are two-channel WTD, spin-resolved single-channel WTD, and cross-channel WTD. We analyze the behaviors of WTDs in short times, correlated with the current behaviors for different spin polarizations and noncollinear angles. Cross-channel WTD reflects the correlation between two spin channels and can be used to characterize the spin-transfer torque process. We study the influence of the earlier detection on the subsequent detection from the perspective of cross-channel WTD, and define the influence degree quantity as the cumulative absolute difference between cross-channel WTDs and first-passage time distributions to quantitatively characterize the spin-flip process. We observe that influence degree versus spin-transfer torque for different noncollinear angles as well as different polarizations collapse into a single curve showing universal behaviors. This demonstrates that cross-channel WTDs can be a pathway to characterize spin correlation in spintronics system.

  1. Comparison of three-level torque hysteresis controllers for direct torque control

    OpenAIRE

    Beerten, Jef; Verveckken, Jan; Driesen, Johan

    2009-01-01

    In this paper, a comparison is made between different implementations of the three-level torque comparator for a Direct Torque Control (DTC) based induction motor drive. The DTC scheme controls stator flux and torque by means of hysteresis comparators, respectively a two-level control structure for the stator flux and a three-level comparator for the electromagnetic torque. The standard three-level hysteresis controller has a DC offset torque error. In this paper, an additive implementation i...

  2. Oliver E. Buckley Condensed Matter Prize Lecture: Transfer of spin momentum between magnets: its genesis and prospect

    Science.gov (United States)

    Slonczewski, John

    2013-03-01

    Consider two nanoscopic monodomain magnets connected by a spacer that is composed of a non-magnetic metal or a tunnel barrier. Any externally applied electric current flowing through these three layers contributes tiny pseudo-torques to both magnetic moments (J . S . 1989). Such a weak spin-transfer torque (STT) may counteract and overcome a comparably small torque caused by viscous dissipation (L. Berger1996; J . S . 1996). Any initial motion (e. g. excited by ambient temperature) of one moment (or both), may grow in amplitude and culminate in steady precession or a transient switch to a new direction of static equilibrium. In a memory element, the STT effect writes 0 or 1 in a magnetic-tunnel junction. Indeed, world-wide developments of memory arrays and radio-frequency oscillators utilizing current-driven STT today enjoy a nine-digit dollar commitment. But the fact that transfer of each half-unit of spin momentum h/4 π through a barrier requires the transfer of at least one unit of electric charge limits its efficiency. Arguably, STT should also arise from the flow of external heat, in either direction, between an insulating magnet, of ferrite or garnet (e. g. YIG) composition, and a metallic spacer (J . S . 2010). Whenever s-d exchange annihilates a hot magnon at the insulator/metal-spacer interface, it transfers one unit h/2 π of spin momentum to the spacer. Conduction electrons within the spacer will transport this spin momentum to the second magnet without requiring an electric current. Such a thermagnonicmethod, modestly powered by a Joule-effect heater, can substantially increase the efficiency of STT. Support for this prediction comes from (1) an estimate of the sd-exchange coefficient from data on spin relaxation in magnetically dilute (Cu,Ag,Au):Mn alloys; (2) a DFT computation (J. Xiao et al 2010); and (3) most persuasively, data from spin pumping driven across a YIG/Au interface by ferromagnetic resonance (B. Heinrich et al 2011; C. Burrowes et al

  3. Spin torques in ferromagnetic/normal-metal structures

    Czech Academy of Sciences Publication Activity Database

    Xia, K.; Kelly, P. J.; Bauer, G. E. W.; Brataas, A.; Turek, Ilja

    2002-01-01

    Roč. 65, č. 22 (2002), s. 220401 ISSN 0163-1829 R&D Projects: GA ČR GA202/00/0122 Institutional research plan: CEZ:AV0Z2041904 Keywords : tunneling * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  4. Colossal spin transfer torque effect on skyrmion along the edge.

    Science.gov (United States)

    Iwasaki, Junichi; Koshibae, Wataru; Nagaosa, Naoto

    2014-08-13

    We study by the micromagnetic simulations the skyrmion motion along the edge driven by the current transverse to it. We found that (i) the velocity is enhanced by the factor of ∼ 1/α (α: the Gilbert damping) with the maximum value determined only by the confining force from the edge, (ii) the inertia appear due to the confining potential with the coordinate perpendicular to the edge playing the role of the kinetic momentum, and (iii) the collision between the two skyrmions is almost elastic without causing any internal distortions.

  5. Nonlinear dynamics of spin transfer nano-oscillators

    Indian Academy of Sciences (India)

    oscillations, is termed as spin transfer torque nano-oscillator or simply spin transfer nano- oscillator (STNO). However, the above nanoscale level microwave source lacks efficiency on two counts: (1) low output power (∼ nW), (2) high signal-to-noise ratio. Both the issues can be handled by phase locking a large array of ...

  6. Influence of the cage on friction torque in low loaded thrust ball bearing operating in dry conditions

    Science.gov (United States)

    Olaru, D.; Balan, M. R.; Tufescu, A.

    2016-08-01

    The authors investigated analytically and experimentally the friction torque in a modified thrust ball bearing operating at very low axial load in dry conditions by using only three balls and a cage. The experiments were conducted by using spin-down methodology. The results evidenced the influence of the sliding friction between the cage and the balls on the total friction torque. It was concluded that at very low loads the friction between cage and balls in a thrust ball bearing has an important contribution on total friction torque.

  7. Limited Angle Torque Motors Having High Torque Density, Used in Accurate Drive Systems

    Directory of Open Access Journals (Sweden)

    R. Obreja

    2011-01-01

    Full Text Available A torque motor is a special electric motor that is able to develop the highest possible torque in a certain volume. A torque motor usually has a pancake configuration, and is directly jointed to a drive system (without a gear box. A limited angle torque motor is a torque motor that has no rotary electromagnetic field — in certain papers it is referred to as a linear electromagnet. The main intention of the authors for this paper is to present a means for analyzing and designing a limited angle torque motor only through the finite element method. Users nowadays require very high-performance limited angle torque motors with high density torque. It is therefore necessary to develop the highest possible torque in a relatively small volume. A way to design such motors is by using numerical methods based on the finite element method.

  8. Self-consistent treatment of spin and magnetization dynamic effect in spin transfer switching

    International Nuclear Information System (INIS)

    Guo Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Koh, Dax Enshan; Han, Guchang; Meng, Hao

    2011-01-01

    The effect of itinerant spin moment (m) dynamic in spin transfer switching has been ignored in most previous theoretical studies of the magnetization (M) dynamics. Thus in this paper, we proposed a more refined micromagnetic model of spin transfer switching that takes into account in a self-consistent manner of the coupled m and M dynamics. The numerical results obtained from this model further shed insight on the switching profiles of m and M, both of which show particular sensitivity to parameters such as the anisotropy field, the spin torque field, and the initial deviation between m and M.

  9. Gate-Driven Pure Spin Current in Graphene

    Science.gov (United States)

    Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

    2017-09-01

    The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

  10. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control...... of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed....

  11. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2012-01-01

    In a new branch of physics and technology called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called 'spin current', are manipulated and controlled together. This book provides an introduction and guide to the new physics and application of spin current.

  12. Improvements in remote equipment torquing and fastening

    International Nuclear Information System (INIS)

    Garin, J.

    1978-01-01

    Remote torquing and fastening is a requirement of generic interest for application in an environment not readily accessible to man. The developments over the last 30 years in torque-controlled equipment above 200 nm (150 ft/lb) have not been emphasized. The development of specialized subassemblies to torque and fasten equipment in a remotely controlled environment is an integral part of the Advanced Fuel Recycle Program at Oak Ridge National Laboratory. Commercially available subassemblies have been adapted into a system that would provide remote torquing and fastening in the range of 200 to 750 nm (150 to 550 ft/lb). 9 figures

  13. Spin-Hall nano-oscillator: A micromagnetic study

    Energy Technology Data Exchange (ETDEWEB)

    Giordano, A.; Azzerboni, B.; Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy); Carpentieri, M. [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Laudani, A. [Department of Engineering, University of Roma Tre, via V. Volterra 62, I-00146 Roma (Italy); Gubbiotti, G. [Istituto Officina dei Materiali del CNR (CNR-IOM), Unità di Perugia c/o Dipartimento di Fisica e Geologia, Via A. Pascoli, 06123 Perugia (Italy)

    2014-07-28

    This Letter studies the dynamical behavior of spin-Hall nanoscillators from a micromagnetic point of view. The model parameters have been identified by reproducing recent experimental data quantitatively. Our results indicate that a strongly localized mode is observed for in-plane bias fields such as in the experiments, while predict the excitation of an asymmetric propagating mode for large enough out-of plane bias field similarly to what observed in spin-torque nanocontact oscillators. Our findings show that spin-Hall nanoscillators can find application as spin-wave emitters for magnonic applications where spin waves are used for transmission and processing information on nanoscale.

  14. Electrical Spin Generation and Transport in Spin-Orbit Coupled Systems

    Science.gov (United States)

    Niu, Qian

    2005-03-01

    We consider spin generation and transport in bands with built-in spin-orbit coupling. A number of fundamental issues will be discussed: (1) the existence of spin-dipole and torque-dipole of wave packets which model the carriers; (2) source terms in the continuity equation (spin generation and relaxation); (3) the composition of the spin current (Berry phase and more); (4) spin Hall conductivity and its reciprocal; (5) the spin current responsible for spin accumulation. *References: *1 D. Culcer, J. Sinova, N. A. Sinitsyn, T. Jungwirth, A. H.MacDonald, Q. Niu, `Semiclassical theory of spin transport in spin-orbit coupled systems', Phys. Rev. Lett. 93, 046602 (2004). *2 P. Zhang and Q. Niu, `Charge-Hall effect driven by spin force: reciprocal of the spin-Hall effect' Cond-mat/0406436. *3 D. Culcer, Y. G. Yao, A. H. MacDonald, and Q. Niu, `Electric generation of spin in crystals with reduced symmetry', Cond-mat/0408020.

  15. Game programmer's guide to Torque under the hood of the Torque game engine

    CERN Document Server

    Maurina , Edward F

    2006-01-01

    game programmer working with the Torque game engine must have ""The Game Programmer's Guide To Torque"": it teaches everything needed to design your own game, using experiences of game makers and industry veterans well versed in Torque technology. A Torque Game engine demo is included on an accompanying cd while step-by-step examples tell how to use it. Its focus on all the basics makes for an exceptional coverage for all levels of game programmer. -Bookwatch, August 2006

  16. Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout.

    Science.gov (United States)

    Sukachev, D D; Sipahigil, A; Nguyen, C T; Bhaskar, M K; Evans, R E; Jelezko, F; Lukin, M D

    2017-12-01

    The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250  ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.

  17. Electrical and mechanical magnetization torques

    NARCIS (Netherlands)

    Kovalev, A.A.

    2006-01-01

    Only charge degree of freedom is utilized in most electronic devices. The use of the spin degree of freedom is relatively recent. The discovery of the Giant Magnetoresistance (GMR) effect initiated the development of magnetoelectronics - the field that studies effects on electron transport involving

  18. Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

    Science.gov (United States)

    Sahay, Shubham; Suri, Manan

    2017-12-01

    This paper provides a comprehensive review and insight of recent trends in the field of random number generator (RNG) and physically unclonable function (PUF) circuits implemented using different types of emerging resistive non-volatile (NVM) memory devices. We present a detailed review of hybrid RNG/PUF implementations based on the use of (i) Spin-Transfer Torque (STT-MRAM), and (ii) metal-oxide based (OxRAM), NVM devices. Various approaches on Hybrid CMOS-NVM RNG/PUF circuits are considered, followed by a discussion on different nanoscale device phenomena. Certain nanoscale device phenomena (variability/stochasticity etc), which are otherwise undesirable for reliable memory and storage applications, form the basis for low power and highly scalable RNG/PUF circuits. Detailed qualitative comparison and benchmarking of all implementations is performed.

  19. Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

    Science.gov (United States)

    Munira, Kamaram; Romero, Jonathon; Butler, William H.

    2014-05-01

    Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr2MnAs-MgO system with MnAs interface layers and Co2MnSi-MgO system with Mn2 interface layers.

  20. 40 CFR 1065.310 - Torque calibration.

    Science.gov (United States)

    2010-07-01

    ... manufacturer's instructions for linearizing your torque sensor's output. We recommend that you calibrate the... combinations for each applicable torque-measuring range, spacing the weight quantities about equally over the... range, spacing the force quantities about equally over the range. Oscillate or rotate the dynamometer...

  1. Radiation Forces and Torques without Stress (Tensors)

    Science.gov (United States)

    Bohren, Craig F.

    2011-01-01

    To understand radiation forces and torques or to calculate them does not require invoking photon or electromagnetic field momentum transfer or stress tensors. According to continuum electromagnetic theory, forces and torques exerted by radiation are a consequence of electric and magnetic fields acting on charges and currents that the fields induce…

  2. The Venus-Earth-Jupiter spin-orbit coupling model

    Science.gov (United States)

    Wilson, I. R. G.

    2013-12-01

    A Venus-Earth-Jupiter spin-orbit coupling model is constructed from a combination of the Venus-Earth-Jupiter tidal-torquing model and the gear effect. The new model produces net tangential torques that act upon the outer convective layers of the Sun with periodicities that match many of the long-term cycles that are found in the 10Be and 14C proxy records of solar activity.

  3. A non-unity torque sharing function for torque ripple minimization of switched reluctance generators

    DEFF Research Database (Denmark)

    Park, Kiwoo; Liu, Xiao; Chen, Zhe

    2013-01-01

    This paper presents a new torque ripple minimization technique for a Switched Reluctance Generator (SRG). Although the SRG has many advantageous characteristics as a generator, it has not been widely employed in the industry. One of the most notorious disadvantages of the SRG is its high torque...... ripple. In this paper, a non-unity Torque Sharing Function (TSF) is proposed to minimize the torque ripple over a wide speed range of operation. Simulation results are presented to verify the effectiveness of the proposed torque ripple minimization technique....

  4. A parametric study of the behavior of the angular momentum vector during spin rate changes of rigid body spacecraft

    Science.gov (United States)

    Longuski, J. M.

    1982-01-01

    During a spin-up or spin-down maneuver of a spinning spacecraft, it is usual to have not only a constant body-fixed torque about the desired spin axis, but also small undesired constant torques about the transverse axes. This causes the orientation of the angular momentum vector to change in inertial space. Since an analytic solution is available for the angular momentum vector as a function of time, this behavior can be studied for large variations of the dynamic parameters, such as the initial spin rate, the inertial properties and the torques. As an example, the spin-up and spin-down maneuvers of the Galileo spacecraft was studied and as a result, very simple heuristic solutions were discovered which provide very good approximations to the parametric behavior of the angular momentum vector orientation.

  5. Estimating Torque Imparted on Spacecraft Using Telemetry

    Science.gov (United States)

    Lee, Allan Y.; Wang, Eric K.; Macala, Glenn A.

    2013-01-01

    There have been a number of missions with spacecraft flying by planetary moons with atmospheres; there will be future missions with similar flybys. When a spacecraft such as Cassini flies by a moon with an atmosphere, the spacecraft will experience an atmospheric torque. This torque could be used to determine the density of the atmosphere. This is because the relation between the atmospheric torque vector and the atmosphere density could be established analytically using the mass properties of the spacecraft, known drag coefficient of objects in free-molecular flow, and the spacecraft velocity relative to the moon. The density estimated in this way could be used to check results measured by science instruments. Since the proposed methodology could estimate disturbance torque as small as 0.02 N-m, it could also be used to estimate disturbance torque imparted on the spacecraft during high-altitude flybys.

  6. F center-molecular ion couples in alkali halides: Magneto-optics study (part two). Spin lattice relaxation time and electron spin memory; Studi di magnetoottica sulla coppia centro F-ione molecolare negli alogenuri alcalini: Parte 2. Misura del tempo di rilassamento spin-reticolo e della memoria di spin dell`elettrone nel ciclo ottico

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, G.; Botti, S.; Grassano, U.M.; Luty, F.

    1991-10-01

    The spin-lattice relaxation time in the ground state, T/sub 1/, and the spin-mixing parameter during the optical cycle, epsilon, were measured in FH(OH) and FH(CN) centers in various alkali halides (KCl, KBr, KI, CsCl, and CsBr). For a close comparison, all experiments were performed before and after the optical association of the F center and molecular ion. T/sub 1/ becomes shorter before and still more after aggregation with respect to the values measured in the pure crystal, especially at very low magnetic fields. Epsilon decreases a little in crystals doped with OH-, while it increases a lot in crystals doped with CN-. Part of these results can be interpreted within the actual knowledge of the F-center physics. Part have been used to shed some light on the various unknown aspects of the energy transfer between the excited F-center and the molecular ion.

  7. Spin-Orbitronics at Transition Metal Interfaces

    KAUST Repository

    Manchon, Aurelien

    2017-11-09

    The presence of large spin–orbit interaction at transition metal interfaces enables the emergence of a variety of fascinating phenomena that have been at the forefront of spintronics research in the past 10 years. The objective of the present chapter is to offer a review of these various effects from a theoretical perspective, with a particular focus on spin transport, chiral magnetism, and their interplay. After a brief description of the orbital hybridization scheme at transition metal interfaces, we address the impact of spin–orbit coupling on the interfacial magnetic configuration, through the celebrated Dzyaloshinskii–Moriya interaction. We then discuss the physics of spin transport and subsequent torques occurring at these interfaces. We particularly address the spin Hall, spin swapping, and inverse spin-galvanic effects. Finally, the interplay between flowing charges and chiral magnetic textures and their induced dynamics are presented. We conclude this chapter by proposing some perspectives on promising research directions.

  8. The effect of patterning options on embedded memory cells in logic technologies at iN10 and iN7

    Science.gov (United States)

    Appeltans, Raf; Weckx, Pieter; Raghavan, Praveen; Kim, Ryoung-Han; Kar, Gouri Sankar; Furnémont, Arnaud; Van der Perre, Liesbet; Dehaene, Wim

    2017-03-01

    Static Random Access Memory (SRAM) cells are used together with logic standard cells as the benchmark to develop the process flow for new logic technologies. In order to achieve successful integration of Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) as area efficient higher level embedded cache, it also needs to be included as a benchmark. The simple cell structure of STT-MRAM brings extra patterning challenges to achieve high density. The two memory types are compared in terms of minimum area and critical design rules in both the iN10 and iN7 node, with an extra focus on patterning options in iN7. Both the use of Self-Aligned Quadruple Patterning (SAQP) mandrel and spacer engineering, as well as multi-level via's are explored. These patterning options result in large area gains for the STT-MRAM cell and moreover determine which cell variant is the smallest.

  9. Spin squeezing of atomic ensembles via nuclear-electronic spin entanglement

    DEFF Research Database (Denmark)

    Fernholz, Thomas; Krauter, Hanna; Jensen, Kasper

    2008-01-01

    quantum limit for quantum memory experiments and applications in quantum metrology and is thus a complementary alternative to spin squeezing obtained via inter-atom entanglement. Squeezing of the collective spin is verified by quantum state tomography.......We demonstrate spin squeezing in a room temperature ensemble of 1012 Cesium atoms using their internal structure, where the necessary entanglement is created between nuclear and electronic spins of each individual atom. This state provides improvement in measurement sensitivity beyond the standard...

  10. Study of the origin of magnetic couples induced by spin-orbit coupling in Co/Pt-based asymmetrical structures

    International Nuclear Information System (INIS)

    Drouard, Marc

    2014-01-01

    In order to reduce power consumption in next generations' electronic devices, one potential solution is to implement non-volatility in memory cells. In this goal, the magnetization switching of a ferromagnetic material has been used in a memory concept: the MRAM. The latest development of this technology, called SOT-RAM, is based on new phenomena called SOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedent generations (STT-MRAM), it should achieve a higher operating speed and an endurance adapted for cache and main memories applications. SOTs is a generic term referring to all the effects, linked to the spin-orbit interaction, and that enable magnetization reversal. They are yet not perfectly understood. The main objective of this Ph.D. was then to study these SOTs through a quasi-static experimental measurement setup based on anomalous and planar Hall effects. Its implementation and the associated analysis method, as well as the required theoretical considerations for data interpretation are detailed in this manuscript. It has been highlighted that magnetization switching in perpendicularly magnetization cobalt-platinum Systems cannot be explained by the simple models considered thus far in the literature. As a matter of fact it has been evidenced that at least two effects have to be considered in order to explain observed phenomena. In addition, they present different susceptibility both to a modification of the crystal structure and to a temperature change. (author) [fr

  11. An antidamping spin–orbit torque originating from the Berry curvature

    Czech Academy of Sciences Publication Activity Database

    Kurebayashi, H.; Sinova, Jairo; Fang, D.; Irvine, A.C.; Skinner, T.D.; Wunderlich, Joerg; Novák, Vít; Campion, R. P.; Gallagher, B. L.; Vehsthedt, E.K.; Zarbo, Liviu; Výborný, Karel; Ferguson, A. J.; Jungwirth, Tomáš

    2014-01-01

    Roč. 9, č. 3 (2014), s. 211-217 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : spintronics * spin torque * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 34.048, year: 2014

  12. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-07-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.

  13. Design and analysis of an MR rotary brake for self-regulating braking torques.

    Science.gov (United States)

    Yun, Dongwon; Koo, Jeong-Hoi

    2017-05-01

    This paper presents a novel Magneto-rheological (MR) brake system that can self-regulate the output braking torques. The proposed MR brake can generate a braking torque at a critical rotation speed without an external power source, sensors, or controllers, making it a simple and cost-effective device. The brake system consists of a rotary disk, permanent magnets, springs, and MR fluid. The permanent magnets are attached to the rotary disk via the springs, and they move outward through grooves with two different gap distances along the radial direction of the stator due to the centrifugal force. Thus, the position of the magnets is dependent on the spin speed, and it can determine the magnetic fields applied to MR fluids. Proper design of the stator geometry gives the system unique torque characteristics. To show the performance of an MR brake system, the electromagnetic characteristics of the system are analyzed, and the torques generated by the brake are calculated using the result of the electromagnetic analysis. Using a baseline model, a parametric study is conducted to investigate how the design parameters (geometric shapes and material selection) affect the performance of the brake system. After the simulation study, a prototype brake system is constructed and its performance is experimentally evaluated. The experimental results show that the prototype produced the maximum torque of 1.2 N m at the rotational speed of 100 rpm. The results demonstrate the feasibility of the proposed MR brake as a speed regulator in rotating systems.

  14. Effects of spin-orbit coupling on the spin structure of deposited transition-metal clusters

    Science.gov (United States)

    Mankovsky, S.; Bornemann, S.; Minár, J.; Polesya, S.; Ebert, H.; Staunton, J. B.; Lichtenstein, A. I.

    2009-07-01

    The influence of the spin-orbit coupling on the magnetic structure of deposited transition-metal nanostructures has been studied by fully relativistic electronic-structure calculations. The interplay of exchange coupling and magnetic anisotropy was monitored by studying the corresponding magnetic torque calculated within ab initio and model approaches. We find that a spin-orbit-induced Dzyaloshinski-Moriya interaction has a profound effect on the spin structure of such complex magnetic systems and that in combination with magnetic anisotropies and isotropic exchange this can result in peculiar magnetic properties.

  15. Forearm Torque and Lifting Strength: Normative Data.

    Science.gov (United States)

    Axelsson, Peter; Fredrikson, Per; Nilsson, Anders; Andersson, Jonny K; Kärrholm, Johan

    2018-02-10

    To establish reference values for new methods designed to quantitatively measure forearm torque and lifting strength and to compare these values with grip strength. A total of 499 volunteers, 262 males and 237 females, aged 15 to 85 (mean, 44) years, were tested for lifting strength and forearm torque with the Kern and Baseline dynamometers. These individuals were also tested for grip strength with a Jamar dynamometer. Standardized procedures were used and information about sex, height, weight, hand dominance, and whether their work involved high or low manual strain was collected. Men had approximately 70% higher forearm torque and lifting strength compared with females. Male subjects aged 26 to 35 years and female subjects aged 36 to 45 years showed highest strength values. In patients with dominant right side, 61% to 78% had a higher or equal strength on this side in the different tests performed. In patients with dominant left side, the corresponding proportions varied between 41% and 65%. There was a high correlation between grip strength and forearm torque and lifting strength. Sex, body height, body weight, and age showed a significant correlation to the strength measurements. In a multiple regression model sex, age (entered as linear and squared) could explain 51% to 63% of the total variances of forearm torque strength and 30% to 36% of lifting strength. Reference values for lifting strength and forearm torque to be used in clinical practice were acquired. Grip strength has a high correlation to forearm torque and lifting strength. Sex, age, and height can be used to predict forearm torque and lifting strength. Prediction equations using these variables were generated. Normative data of forearm torque and lifting strength might improve the quality of assessment of wrist and forearm disorders as well as their treatments. Copyright © 2018 American Society for Surgery of the Hand. Published by Elsevier Inc. All rights reserved.

  16. Drag and Torque on Locked Screw Propeller

    Directory of Open Access Journals (Sweden)

    Tomasz Tabaczek

    2014-09-01

    Full Text Available Few data on drag and torque on locked propeller towed in water are available in literature. Those data refer to propellers of specific geometry (number of blades, blade area, pitch and skew of blades. The estimation of drag and torque of an arbitrary propeller considered in analysis of ship resistance or propulsion is laborious. The authors collected and reviewed test data available in the literature. Based on collected data there were developed the empirical formulae for estimation of hydrodynamic drag and torque acting on locked screw propeller. Supplementary CFD computations were carried out in order to prove the applicability of the formulae to modern moderately skewed screw propellers.

  17. High Torque, Direct Drive Electric Motor Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Bear Engineering proposes to advance the development of an innovative high torque, low speed, direct drive motor in order to meet NASA's requirements for such...

  18. Sensorless vector and direct torque control

    CERN Document Server

    Vas, Peter

    1998-01-01

    This is the first comprehensive book on sensorless high performance a.c. drives. It is essential reading for anyone interested in acquiring a solid background on sensorless torque-controlled drives. It presents a detailed and unified treatment of sensorless vector-controlled and direct-torque controlled drive systems. It also discusses the applications of artificial intelligence to drives. Where possible, space vector theory is used and emphasis is laid on detailed mathematical and physical analysis. Sensorless drive schemes for different types of permanent magnet synchronous motors, synchronous reluctance motors, and induction motors are also presented. These include more than twenty vector drives e.g. five types of MRAS-based vector drives, and eleven types of direct-torque-controlled (DTC) drives, e.g. the ABB DTC drive. However, torque-controlled switched reluctance motor drives are also discussed due to their emerging importance. The book also covers various drive applications using artificial intellige...

  19. Improved computed torque control for industrial robots

    Science.gov (United States)

    Uebel, Mark; Minis, Ioannis; Cleary, Kevin

    1992-01-01

    The authors examine the computed torque control problem for a robot arm with flexible, geared, joint drive systems which are typical in many industrial robots. The standard computed torque algorithm is not directly applicable to this class of manipulators due to the dynamics introduced by the joint drive systems. The proposed approach overcomes this problem by combining a novel computed torque algorithm with simple torque controllers at each joint of the robot. The control scheme is applied to a seven degree-of-freedom industrial manipulator, and the system performance in standard tasks is evaluated using both dynamic simulation and actual experiments. The results show that the proposed controller leads to improved tracking performance over a conventional PD (proportional plus derivative) controller.

  20. High-torque magnetorheological fluid clutch

    Science.gov (United States)

    Kavlicoglu, Barkan M.; Gordaninejad, Faramarz; Evrensel, Cahit A.; Cobanoglu, Nigar; Liu, Yanming; Fuchs, Alan; Korol, George

    2002-06-01

    This study focuses on the design and characterization of a radial double-plate magneto-rheological fluid (MRF) clutch. The clutch's torque output can be controlled by adjusting the applied magnetic field. Electromagnetic finite element analysis (FEA) is performed to design and optimize the clutch. The shear stress distribution in MRF between the plates is theoretically predicted using the magnetic flux density distribution evaluated from the FEA. The output torque of the clutch is derived by using the Bingham plastic constitutive model. The output torque values are recorded for different input velocities and applied magnetic fields, and they are compared with the theoretical results. It was demonstrated that the clutch is capable of producing high controllable torques.

  1. 14 CFR 23.361 - Engine torque.

    Science.gov (United States)

    2010-01-01

    ... takeoff power and propeller speed, multiplied by a factor accounting for propeller control system... compressor jamming). (2) A limit engine torque load imposed by the maximum acceleration of the engine. (c...

  2. 14 CFR 25.361 - Engine torque.

    Science.gov (United States)

    2010-01-01

    ... by a factor accounting for propeller control system malfunction, including quick feathering, acting... malfunction or structural failure (such as compressor jamming). (2) A limit engine torque load imposed by the...

  3. Transacted Memory for Smart Cards

    NARCIS (Netherlands)

    Hartel, Pieter H.; Butler, Michael J.; de Jong, Eduard; Longley, Mark; Olivieira, J.N.; Zave, P.

    A transacted memory that is implemented using EEPROM technology offers persistence, undoability and auditing. The transacted memory system is formally specified in Z, and refined in two steps to a prototype C implementation / SPIN model. Conclusions are offered both on the transacted memory system

  4. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2017-01-01

    Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

  5. Vortex-Core Reversal Dynamics: Towards Vortex Random Access Memory

    Science.gov (United States)

    Kim, Sang-Koog

    2011-03-01

    An energy-efficient, ultrahigh-density, ultrafast, and nonvolatile solid-state universal memory is a long-held dream in the field of information-storage technology. The magnetic random access memory (MRAM) along with a spin-transfer-torque switching mechanism is a strong candidate-means of realizing that dream, given its nonvolatility, infinite endurance, and fast random access. Magnetic vortices in patterned soft magnetic dots promise ground-breaking applications in information-storage devices, owing to the very stable twofold ground states of either their upward or downward core magnetization orientation and plausible core switching by in-plane alternating magnetic fields or spin-polarized currents. However, two technologically most important but very challenging issues --- low-power recording and reliable selection of each memory cell with already existing cross-point architectures --- have not yet been resolved for the basic operations in information storage, that is, writing (recording) and readout. Here, we experimentally demonstrate a magnetic vortex random access memory (VRAM) in the basic cross-point architecture. This unique VRAM offers reliable cell selection and low-power-consumption control of switching of out-of-plane core magnetizations using specially designed rotating magnetic fields generated by two orthogonal and unipolar Gaussian-pulse currents along with optimized pulse width and time delay. Our achievement of a new device based on a new material, that is, a medium composed of patterned vortex-state disks, together with the new physics on ultrafast vortex-core switching dynamics, can stimulate further fruitful research on MRAMs that are based on vortex-state dot arrays.

  6. Knudsen torque on heated micro beams

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qi; Liang, Tengfei; Ye, Wenjing [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clearwater Bay, Kowloon (Hong Kong)

    2014-12-09

    Thermally induced mechanical loading has been shown to have significant effects on micro/nano objects immersed in a gas with a non-uniform temperature field. While the majority of existing studies and related applications focus on forces, we investigate the torque, and thus the rotational motion, produced by such a mechanism. Using the asymptotic analysis in the near continuum regime, the Knudsen torque acting on an asymmetrically located uniformly heated microbeam in a cold enclosure is investigated. The existence of a non-zero net torque is demonstrated. In addition, it has been found that by manipulating the system configuration, the rotational direction of the torque can be changed. Two types of rotational motion of the microbeam have been identified: the pendulum motion of a rectangular beam, and the unidirectional rotation of a cylindrical beam. A rotational frequency of 4 rpm can be achieved for the cylindrical beam with a diameter of 3μm at Kn = 0.005. Illustrated by the simulations using the direct simulation of Monte Carlo, the Knudsen torque can be much increased in the transition regime, demonstrating the potential of Knudsen torque serving as a rotation engine for micro/nano objects.

  7. Spin Electronics

    Science.gov (United States)

    2003-08-01

    applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a...physical phenomena in II-VI and III-V semiconductors. In II-VI systems, the Mn2+ ions act to boost the electron spin precession up to terahertz ...conductors, proximity effect between ferromagnets and superconductors , and the effects of spin injection on the physical properties of the

  8. Spin doctoring

    OpenAIRE

    Vozková, Markéta

    2011-01-01

    1 ABSTRACT The aim of this text is to provide an analysis of the phenomenon of spin doctoring in the Euro-Atlantic area. Spin doctors are educated people in the fields of semiotics, cultural studies, public relations, political communication and especially familiar with the infrastructure and the functioning of the media industry. Critical reflection of manipulative communication techniques puts spin phenomenon in historical perspective and traces its practical use in today's social communica...

  9. Heisenberg spin glass experiments and the chiral ordering scenario

    International Nuclear Information System (INIS)

    Campbell, Ian A.; Petit, Dorothee C.M.C.

    2010-01-01

    An overview is given of experimental data on Heisenberg spin glass materials so as to make detailed comparisons with numerical results on model Heisenberg spin glasses, with particular reference to the chiral driven ordering transition scenario due to Kawamura and collaborators. On weak anisotropy systems, experiments show critical exponents which are very similar to those estimated numerically for the model Heisenberg chiral ordering transition but which are quite different from those at Ising spin glass transitions. Again on weak anisotropy Heisenberg spin glasses, experimental torque data show well defined in-field transverse ordering transitions up to strong applied fields, in contrast to Ising spin glasses where fields destroy ordering. When samples with stronger anisotropies are studied, critical and in-field behavior tend progressively towards the Ising limit. It can be concluded that the essential physics of laboratory Heisenberg spin glasses mirrors that of model Heisenberg spin glasses, where chiral ordering has been demonstrated numerically. (author)

  10. Multi-Valued Spin Switch in a Semiconductor Microcavity

    Science.gov (United States)

    Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

    2011-12-01

    In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

  11. Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

    Czech Academy of Sciences Publication Activity Database

    Kim, K.W.; Lee, K.J.; Sinova, Jairo; Lee, H. W.; Stiles, M.D.

    2017-01-01

    Roč. 96, č. 10 (2017), s. 1-23, č. článku 104438. ISSN 2469-9950 EU Projects: European Commission(XE) 610115 - SC2 Institutional support: RVO:68378271 Keywords : topological insulator * domain- walls * magnitude * transport * systems Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  12. Extraneous torque and compensation control on the electric load simulator

    Science.gov (United States)

    Jiao, Zongxia; Li, Chenggong; Ren, Zhiting

    2003-09-01

    In this paper a novel motor-drive load simulator based on compensation control strategy is proposed and designed. Through analyzing the torque control system consisting of DC torque motor, PWM module and torque sensor, it is shown that performance of the motor-drive load simulator is possible to be as good as that of the electro-hydraulic load simulator in the range of small torque. In the course of loading, the rotation of the actuator would cause a strong disturbance torque through the motor back-EMF, which produces extraneous torque similar as in electro-hydraulic load simulator. This paper analyzes the cause of extraneous torque inside the torque motor in detail and presents an appropriate compensation control with which the extraneous torque can be compensated and the good performance of the torque control system can be obtained. The results of simulation indicate that the compensation is very effective and the track performance is according with the request.

  13. Study on torque algorithm of switched reluctance motor

    Directory of Open Access Journals (Sweden)

    Xiaoguang LI

    2016-12-01

    Full Text Available To solve the torque ripple problem of switched reluctance motor under the traditional control method, a direct torque control method for switched reluctance motor is proposed. Direct torque algorithm controls flux magnitude and direction by querying appropriate voltage vector in switch list. Taking torque as direct control variable can reduce the torque ripple of the motor, which broadens the application fields of switched reluctance motor. Starting with the theory of direct torque algorithm, based on MATLAB/Simulink platform, direct torque control and chopped current control system simulation model are designed. Under the condition that switched reluctance motor model and its load are consistent, it is compared with chopped current algorithm. At last, the feasibility of direct torque algorithm is verified through the platform of hardware experiments. It demonstrates that using direct torque algorithm can make the torque ripple be controlled effectively, which provides a wider application field for the switched reluctance motor.

  14. Spin amplification by controlled symmetry breaking for spin-based logic

    Science.gov (United States)

    Kawakami, Roland K.

    2015-09-01

    Spin amplification is one of the most critical challenges for spintronics and spin-based logic in order to achieve spintronic circuits with fan-out. We propose a new concept for spin amplification that will allow a small spin current in a non-magnetic spin channel to control the magnetization of an attached ferromagnet. The key step is to bring the ferromagnet into an unstable symmetric state (USS), so that a small spin transfer torque from a small spin current can provide a magnetic bias to control the spontaneous symmetry breaking and select the final magnetization direction of the ferromagnet. Two proposed methods for achieving the USS configuration are voltage-controlled Curie temperature (VC-TC) and voltage-controlled magnetic anisotropy (VC-MA). We believe the development of new 2D magnetic materials with greater tunability of VC-TC and VC-MA will be needed for practical applications. A successful realization of spin amplification by controlled symmetry breaking will be important for the implementation of existing spin-logic proposals (e.g. ‘all spin logic’) and could inspire alternative ideas for spintronic circuits and devices.

  15. Spin amplification by controlled symmetry breaking for spin-based logic

    International Nuclear Information System (INIS)

    Kawakami, Roland K

    2015-01-01

    Spin amplification is one of the most critical challenges for spintronics and spin-based logic in order to achieve spintronic circuits with fan-out. We propose a new concept for spin amplification that will allow a small spin current in a non-magnetic spin channel to control the magnetization of an attached ferromagnet. The key step is to bring the ferromagnet into an unstable symmetric state (USS), so that a small spin transfer torque from a small spin current can provide a magnetic bias to control the spontaneous symmetry breaking and select the final magnetization direction of the ferromagnet. Two proposed methods for achieving the USS configuration are voltage-controlled Curie temperature (VC-T C ) and voltage-controlled magnetic anisotropy (VC-MA). We believe the development of new 2D magnetic materials with greater tunability of VC-T C and VC-MA will be needed for practical applications. A successful realization of spin amplification by controlled symmetry breaking will be important for the implementation of existing spin-logic proposals (e.g. ‘all spin logic’) and could inspire alternative ideas for spintronic circuits and devices. (paper)

  16. Angular momentum from tidal torques

    International Nuclear Information System (INIS)

    Barnes, J.; Efstathiou, G.; Cambridge Univ., England)

    1987-01-01

    The origin of the angular momentum of bound objects in large N-body simulations is studied using three sets of models. One model with white-noise initial conditions is analyzed as well as two in which the initial conditions have more power on large scales, as predicted in models with cold dark matter. The growth and distribution of angular momentum in individual objects is studied and it is found that the specific angular momentum distribution of bound clumps increases in a near linear fashion with radius while the orientation of the angular momentum in the inner high-density regions is often poorly correlated with that of the outer parts. It is also found that the dimensionless spin parameter is insensitive to the initial perturbation spectrum and has a median value of about 0.05. 61 references

  17. Potentiation increases peak twitch torque by enhancing rates of torque development and relaxation.

    Science.gov (United States)

    Froyd, Christian; Beltrami, Fernando Gabe; Jensen, Jørgen; Noakes, Timothy David

    2013-01-01

    The aim of this study was to measure the extent to which potentiation changes in response to an isometric maximal voluntary contraction. Eleven physically active subjects participated in two separate studies. Single stimulus of electrical stimulation of the femoral nerve was used to measure torque at rest in unpotentiated quadriceps muscles (study 1 and 2), and potentiated quadriceps muscles torque in a 10 min period after a 5 s isometric maximal voluntary contraction of the quadriceps muscles (study 1). Additionally, potentiated quadriceps muscles torque was measured every min after a further 10 maximal voluntary contractions repeated every min (study 2). Electrical stimulation repeated several times without previous maximal voluntary contraction showed similar peak twitch torque. Peak twitch torque 4 s after a 5 s maximal voluntary contraction increased by 45±13% (study 1) and by 56±10% (study 2), the rate of torque development by 53±13% and 82±29%, and the rate of relaxation by 50±17% and 59±22%, respectively, but potentiation was lost already two min after a 5 s maximal voluntary contraction. There was a tendency for peak twitch torque to increase for the first five repeated maximal voluntary contractions, suggesting increased potentiation with additional maximal voluntary contractions. Correlations for peak twitch torque vs the rate of torque development and for the rate of relaxation were r(2)= 0.94 and r(2)=0.97. The correlation between peak twitch torque, the rate of torque development and the rate of relaxation suggests that potentiation is due to instantaneous changes in skeletal muscle contractility and relaxation.

  18. Electromagnetic deflection of spinning particles

    International Nuclear Information System (INIS)

    Costella, J.P.; McKellar, B.H.J.

    1992-01-01

    It is shown that it is possible to obtain self-consistent and physically acceptable relativistic classical equations of motion for a point-like spin-half particle possessing an electric charge and magnetic dipole moment, directly from a manifestly covariant Lagrangian, if the classical degrees of freedom are appropriately chosen. The equations obtained encompass the well-tested Lorentz force and Thomas-Bargmann-Michel-Telegdi spin equations, as well as providing a definite specification of the classical magnetic dipole force, whose exact form has been the subject of recent debate. Radiation reaction - the force and torque on an accelerated particle due to its self-interaction - is neglected at this stage. 18 refs

  19. Standard practice for calibration of torque-measuring instruments for verifying the torque indication of torque testing machines

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This practice is to specify procedure for the calibration of elastic torque-measuring instruments. Note 1—Verification by deadweight and a lever arm is an acceptable method of verifying the torque indication of a torque testing machine. Tolerances for weights used are tabulated in Practice WK6364; methods for calibration of the weights are given in NIST Technical Note 577, Methods of Calibrating Weights for Piston Gages. 1.2 The values stated in either SI units or inch-pound units are to be regarded separately as standard. The values stated in each system may not be exact equivalents; therefore, each system shall be used independently of the other. Combining values from the two systems may result in non-conformance with the standard. 1.3 This practice is intended for the calibration of static or quasi-static torque measuring instruments. The practice is not applicable for high speed torque calibrations or measurements. 1.4 This standard does not purport to address all of the safety concerns, if any,...

  20. Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets

    KAUST Repository

    Akosa, Collins Ashu

    2015-03-12

    Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ∼∇2[m×(u⋅∇)m]+ξ∇2[(u⋅∇)m], where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.

  1. A method to accurately estimate the muscular torques of human wearing exoskeletons by torque sensors.

    Science.gov (United States)

    Hwang, Beomsoo; Jeon, Doyoung

    2015-04-09

    In exoskeletal robots, the quantification of the user's muscular effort is important to recognize the user's motion intentions and evaluate motor abilities. In this paper, we attempt to estimate users' muscular efforts accurately using joint torque sensor which contains the measurements of dynamic effect of human body such as the inertial, Coriolis, and gravitational torques as well as torque by active muscular effort. It is important to extract the dynamic effects of the user's limb accurately from the measured torque. The user's limb dynamics are formulated and a convenient method of identifying user-specific parameters is suggested for estimating the user's muscular torque in robotic exoskeletons. Experiments were carried out on a wheelchair-integrated lower limb exoskeleton, EXOwheel, which was equipped with torque sensors in the hip and knee joints. The proposed methods were evaluated by 10 healthy participants during body weight-supported gait training. The experimental results show that the torque sensors are to estimate the muscular torque accurately in cases of relaxed and activated muscle conditions.

  2. A Method to Accurately Estimate the Muscular Torques of Human Wearing Exoskeletons by Torque Sensors

    Directory of Open Access Journals (Sweden)

    Beomsoo Hwang

    2015-04-01

    Full Text Available In exoskeletal robots, the quantification of the user’s muscular effort is important to recognize the user’s motion intentions and evaluate motor abilities. In this paper, we attempt to estimate users’ muscular efforts accurately using joint torque sensor which contains the measurements of dynamic effect of human body such as the inertial, Coriolis, and gravitational torques as well as torque by active muscular effort. It is important to extract the dynamic effects of the user’s limb accurately from the measured torque. The user’s limb dynamics are formulated and a convenient method of identifying user-specific parameters is suggested for estimating the user’s muscular torque in robotic exoskeletons. Experiments were carried out on a wheelchair-integrated lower limb exoskeleton, EXOwheel, which was equipped with torque sensors in the hip and knee joints. The proposed methods were evaluated by 10 healthy participants during body weight-supported gait training. The experimental results show that the torque sensors are to estimate the muscular torque accurately in cases of relaxed and activated muscle conditions.

  3. Decoupled Speed and Torque Control of IPMSM Drives Using a Novel Load Torque Estimator

    Directory of Open Access Journals (Sweden)

    ZAKY, M.

    2017-08-01

    Full Text Available This paper proposes decoupled speed and torque control of interior permanent magnet synchronous motor (IPMSM drives using a novel load torque estimator (LTE. The proposed LTE is applied for computing a load torque and yielding a feed-forward value in the speed controller to separate the torque control from the speed control. Indirect flux weakening using direct current component is obtained for high speed operation of the IPMSM drive, and its value for maximum torque per ampere (MTPA control in constant torque region is also used. LTE uses values of direct and quadrature currents to improve the behavior of the speed controller under the reference tracking and torque disturbances. The complete IPMSM drive by Matlab/Simulink is built. The effectiveness of the proposed control scheme using an experimental setup of the complete drive system implemented on a DSP-DS1102 control board is confirmed. Extensive results over a wide speed range are verified. The efficacy of the proposed method is confirmed in comparison to a conventional PI controller under both the reference speed tracking and load torque disturbance.

  4. A Method to Accurately Estimate the Muscular Torques of Human Wearing Exoskeletons by Torque Sensors

    Science.gov (United States)

    Hwang, Beomsoo; Jeon, Doyoung

    2015-01-01

    In exoskeletal robots, the quantification of the user’s muscular effort is important to recognize the user’s motion intentions and evaluate motor abilities. In this paper, we attempt to estimate users’ muscular efforts accurately using joint torque sensor which contains the measurements of dynamic effect of human body such as the inertial, Coriolis, and gravitational torques as well as torque by active muscular effort. It is important to extract the dynamic effects of the user’s limb accurately from the measured torque. The user’s limb dynamics are formulated and a convenient method of identifying user-specific parameters is suggested for estimating the user’s muscular torque in robotic exoskeletons. Experiments were carried out on a wheelchair-integrated lower limb exoskeleton, EXOwheel, which was equipped with torque sensors in the hip and knee joints. The proposed methods were evaluated by 10 healthy participants during body weight-supported gait training. The experimental results show that the torque sensors are to estimate the muscular torque accurately in cases of relaxed and activated muscle conditions. PMID:25860074

  5. Spin glasses

    CERN Document Server

    Bovier, Anton

    2007-01-01

    Spin glass theory is going through a stunning period of progress while finding exciting new applications in areas beyond theoretical physics, in particular in combinatorics and computer science. This collection of state-of-the-art review papers written by leading experts in the field covers the topic from a wide variety of angles. The topics covered are mean field spin glasses, including a pedagogical account of Talagrand's proof of the Parisi solution, short range spin glasses, emphasizing the open problem of the relevance of the mean-field theory for lattice models, and the dynamics of spin glasses, in particular the problem of ageing in mean field models. The book will serve as a concise introduction to the state of the art of spin glass theory, usefull to both graduate students and young researchers, as well as to anyone curious to know what is going on in this exciting area of mathematical physics.

  6. Brownian motion and entropic torque driven motion of domain walls in antiferromagnets

    Science.gov (United States)

    Yan, Zhengren; Chen, Zhiyuan; Qin, Minghui; Lu, Xubing; Gao, Xingsen; Liu, Junming

    2018-02-01

    We study the spin dynamics in antiferromagnetic nanowire under an applied temperature gradient using micromagnetic simulations on a classical spin model with a uniaxial anisotropy. The entropic torque driven domain-wall motion and the Brownian motion are discussed in detail, and their competition determines the antiferromagnetic wall motion towards the hotter or colder region. Furthermore, the spin dynamics in an antiferromagnet can be well tuned by the anisotropy and the temperature gradient. Thus, this paper not only strengthens the main conclusions obtained in earlier works [Kim et al., Phys. Rev. B 92, 020402(R) (2015), 10.1103/PhysRevB.92.020402; Selzer et al., Phys. Rev. Lett. 117, 107201 (2016), 10.1103/PhysRevLett.117.107201], but more importantly gives the concrete conditions under which these conclusions apply, respectively. Our results may provide useful information on the antiferromagnetic spintronics for future experiments and storage device design.

  7. Torque shudder protection device and method

    Science.gov (United States)

    King, R.D.; Doncker, R.W.A.A. De.; Szczesny, P.M.

    1997-03-11

    A torque shudder protection device for an induction machine includes a flux command generator for supplying a steady state flux command and a torque shudder detector for supplying a status including a negative status to indicate a lack of torque shudder and a positive status to indicate a presence of torque shudder. A flux adapter uses the steady state flux command and the status to supply a present flux command identical to the steady state flux command for a negative status and different from the steady state flux command for a positive status. A limiter can receive the present flux command, prevent the present flux command from exceeding a predetermined maximum flux command magnitude, and supply the present flux command to a field oriented controller. After determining a critical electrical excitation frequency at which a torque shudder occurs for the induction machine, a flux adjuster can monitor the electrical excitation frequency of the induction machine and adjust a flux command to prevent the monitored electrical excitation frequency from reaching the critical electrical excitation frequency. 5 figs.

  8. Electrostatic sensor modeling for torque measurements

    Science.gov (United States)

    Mika, Michał; Dannert, Mirjam; Mett, Felix; Weber, Harry; Mathis, Wolfgang; Nackenhorst, Udo

    2017-09-01

    Torque load measurements play an important part in various engineering applications, as for automotive industry, in which the drive torque of a motor has to be determined. A widely used measuring method are strain gauges. A thin flexible foil, which supports a metallic pattern, is glued to the surface of the object the torque is being applied to. In case of a deformation due to the torque load, the change in the electrical resistance is measured. With the combination of constitutive equations the applied torque load is determined by the change of electrical resistance. The creep of the glue and the foil material, together with the temperature and humidity dependence, may become an obstacle for some applications Kapralov and Fesenko (1984). Thus, there have been optical and magnetical, as well as capacitive sensors introduced). This paper discusses the general idea behind an electrostatic capacitive sensor based on a simple draft of an exemplary measurement setup. For better understanding an own electrostatical, geometrical and mechanical model of this setup has been developed.

  9. Electrostatic sensor modeling for torque measurements

    Directory of Open Access Journals (Sweden)

    M. Mika

    2017-09-01

    Full Text Available Torque load measurements play an important part in various engineering applications, as for automotive industry, in which the drive torque of a motor has to be determined. A widely used measuring method are strain gauges. A thin flexible foil, which supports a metallic pattern, is glued to the surface of the object the torque is being applied to. In case of a deformation due to the torque load, the change in the electrical resistance is measured. With the combination of constitutive equations the applied torque load is determined by the change of electrical resistance. The creep of the glue and the foil material, together with the temperature and humidity dependence, may become an obstacle for some applications Kapralov and Fesenko(1984. Thus, there have been optical and magnetical, as well as capacitive sensors introduced . This paper discusses the general idea behind an electrostatic capacitive sensor based on a simple draft of an exemplary measurement setup. For better understanding an own electrostatical, geometrical and mechanical model of this setup has been developed.

  10. Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

    KAUST Repository

    Wang, Xuhui

    2012-03-13

    In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

  11. Magnonic charge pumping via spin-orbit coupling

    Czech Academy of Sciences Publication Activity Database

    Ciccarelli, C.; Hals, K.M.D.; Irvine, A.; Novák, Vít; Tserkovnyak, Y.; Kurebayashi, H.; Brataas, A.; Ferguson, A.

    2015-01-01

    Roč. 10, č. 1 (2015), 50-54 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : spintronics * spin-orbit torque * GaMnAs Subject RIV: BM - Solid Matter Physics ; Magnet ism Impact factor: 35.267, year: 2015

  12. Light-induced spin polarizations in quantum rings

    NARCIS (Netherlands)

    Joibari, F.K.; Blanter, Y.M.; Bauer, G.E.W.

    2014-01-01

    Nonresonant circularly polarized electromagnetic radiation can exert torques on magnetizations by the inverse Faraday effect (IFE). Here, we discuss the enhancement of IFE by spin-orbit interactions. We illustrate the principle by studying a simple generic model system, i.e., the

  13. Fossil evidence for spin alignment of SDSS galaxies in filaments

    NARCIS (Netherlands)

    Jones, Bernard J.T.; Weygaert, Rien van de; Arag´on-Calvo, Miguel A.

    2010-01-01

    We search for and find fossil evidence that the distribution of the spin axes of galaxies in cosmic web filaments relative to their host filaments are not randomly distributed. This would indicate that the action of large scale tidal torques effected the alignments of galaxies located in cosmic

  14. Disentanglement of bulk and interfacial spin Hall effect in ferromagnet/normal metal interface

    Science.gov (United States)

    Zhou, X.; Tang, M.; Fan, X. L.; Qiu, X. P.; Zhou, S. M.

    2016-10-01

    Spin Hall effect in PdPt alloys in contact with ferromagnetic Ni80Fe20 alloys has been studied by spin torque ferromagnetic resonance technique. The spin torque spin Hall angle (ST-SHA) proves to be contributed by the interfacial and bulk SHAs. The bulk SHA is dominated by the skew scattering and reaches a maximal value for the largest randomization of Pt and Pd atoms at the intermediate alloy composition. In particular, the interfacial SHA becomes prominent for Pt-rich alloys. This phenomenon indicates the enhanced Rashba spin-orbit coupling at the interface, as Pt has a stronger spin-orbit coupling and larger z -potential gradient compared to Pd. The present work highlights the interfacial SHA and provides a pathway to improve the functionality and performance of the next generation spintronic devices.

  15. Helicopter Anti-Torque System Using Strakes

    Science.gov (United States)

    Kelley, H. L.; Wilson, J. C.; Phelps, A. E. (Inventor)

    1984-01-01

    A helicopter is disclosed with a system for controlling main-rotor torque which reduces the power and size requirements of conventional anti-torque means. The torque countering forces are generated by disrupting the main rotor downwash flowing around the fuselage. The downwash flow is separated from the fuselage surface by a strake positioned at a specified location on the fuselage. This location is determined by the particular helicopter wash pattern and fuselage configuration, generally being located between 20 deg before top dead center (TDC) and 80 deg from TDC on the fuselage side to which the main rotor blade approaches during rotation. The strake extends along the fuselage from the cabin section to the aft end and can be continuous or separated for aerodynamic surfaces such as a horizontal stabilizer.

  16. RFID Torque Sensing Tag System for Fasteners

    Science.gov (United States)

    Fink, Patrick W. (Inventor); Lin, Gregory Y. (Inventor); Ngo, Phong H. (Inventor); Kennedy, Timothy F. (Inventor)

    2016-01-01

    The present invention provides an RFID-based torque sensor that can be used to quickly monitor off the shelf fasteners including fasteners that are used in expensive satellites or other uses where fastener failure can be very costly. In one embodiment, an antenna, RFID ring and spring comprise a sensor tag that can be interrogated with an interrogation signal produced by an interrogator device. When sufficient torque is applied to the fastener, an RFID circuit is connected, and produces a radio frequency (RF) signal that can be read by the interrogator. In one embodiment, the RFID circuit does not transmit when the spring member is not compressed, thereby indicating insufficient tensioning of the fastener. The present invention offers the ability to remotely, quickly, and inexpensively verify that any number of fasteners are torqued properly upon initial installation. Where applicable, the present invention allows low cost monitoring over the life of the fastener.

  17. Self-Induced Torque in Hyperbolic Metamaterials

    Science.gov (United States)

    Ginzburg, Pavel; Krasavin, Alexey V.; Poddubny, Alexander N.; Belov, Pavel A.; Kivshar, Yuri S.; Zayats, Anatoly V.

    2013-07-01

    Optical forces constitute a fundamental phenomenon important in various fields of science, from astronomy to biology. Generally, intense external radiation sources are required to achieve measurable effects suitable for applications. Here we demonstrate that quantum emitters placed in a homogeneous anisotropic medium induce self-torques, aligning themselves in the well-defined direction determined by an anisotropy, in order to maximize their radiation efficiency. We develop a universal quantum-mechanical theory of self-induced torques acting on an emitter placed in a material environment. The theoretical framework is based on the radiation reaction approach utilizing the rigorous Langevin local quantization of electromagnetic excitations. We show more than 2 orders of magnitude enhancement of the self-torque by an anisotropic metamaterial with hyperbolic dispersion, having negative ratio of permittivity tensor components, in comparison with conventional anisotropic crystals with the highest naturally available anisotropy.

  18. AX-5 space suit bearing torque investigation

    Science.gov (United States)

    Loewenthal, Stuart; Vykukal, Vic; Mackendrick, Robert; Culbertson, Philip, Jr.

    1990-01-01

    The symptoms and eventual resolution of a torque increase problem occurring with ball bearings in the joints of the AX-5 space suit are described. Starting torques that rose 5 to 10 times initial levels were observed in crew evaluation tests of the suit in a zero-g water tank. This bearing problem was identified as a blocking torque anomaly, observed previously in oscillatory gimbal bearings. A large matrix of lubricants, ball separator designs and materials were evaluated. None of these combinations showed sufficient tolerance to lubricant washout when repeatedly cycled in water. The problem was resolved by retrofitting a pressure compensated, water exclusion seal to the outboard side of the bearing cavity. The symptoms and possible remedies to blocking are discussed.

  19. Spin-crossover materials properties and applications

    CERN Document Server

    Halcrow, Malcolm A

    2013-01-01

    The phenomenon of spin-crossover has a large impact on the physical properties of a solid material, including its colour, magnetic moment, and electrical resistance. Some materials also show a structural phase change during the transition. Several practical applications of spin-crossover materials have been demonstrated including display and memory devices, electrical and electroluminescent devices, and MRI contrast agents. Switchable liquid crystals, nanoparticles, and thin films of spin-crossover materials have also been achieved. Spin-Crossover Materials: Properties and Applicat

  20. 21st International Symposium on Spin Physics

    CERN Document Server

    Ma, Bo-Qiang; SPIN 2014; SPIN2014

    2016-01-01

    This special volume collected important papers written by leading experts, highlighting the latest research findings in various topics of spin phenomena in particle and nuclear physics. The contents are originated from the plenary talks at the latest symposium of the Spin Physics series (SPIN2014) which was held in Beijing, China, October 20-24, 2014.The volume also comprises a special collection of contributions in memory of the late Professor Michel Borghini, an outstanding physicist well remembered for his great contributions to the progress of high energy spin physics.

  1. Development of a magnetostrictive Torque sensor. Jiwaishiki torque sensor no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Tanizaki, K.; Aoki, H.; Maruyama, J.; Shimada, M. (Nissan Motor Co. Ltd., Tokyo (Japan))

    1990-06-25

    In the present report, new torque sensor, utilizing the magnetostrictive effect, was explained in structure of sensor, material problem of the shaft, playing a functionally important role therein, and examples, verifying the characteristics. The magnetic substance is constituted as a set substance of small regions, called magnetic sections, directionally constant in spontaneous magnetization. If stress acts on the magnetic substance, there occur dislocation of magnetic wall, which is border between those sections, and rotation of magnetization, which occurrence causes change in magnetization of all the magnetic substance, ie., magnetostrictive effect. The torque sensor constitutes plural concave/convex forms, directionally oblique to the main torsional stress, on the shaft surface, composed as magnetic substance, and which surface is installed confrontedly with a pair of coils. Result of using a torque sensor for the engine torque measurement could grasp, in each cylinder, both torque generation by combustion and torque decrease by flameout, good in respondency. Example for the transmission to be internally equipped with a sensor could also grasp a large and very quick change in torque with a high respondency. 8 refs., 14 figs.

  2. Observation of the spin Peltier effect for magnetic insulators.

    Science.gov (United States)

    Flipse, J; Dejene, F K; Wagenaar, D; Bauer, G E W; Ben Youssef, J; van Wees, B J

    2014-07-11

    We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modeling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

  3. Designing magnetic droplet soliton nucleation employing spin polarizer

    Science.gov (United States)

    Mohseni, Morteza; Mohseni, Majid

    2018-04-01

    We show by means of micromagnetic simulations that spin polarizer in nano-contact (NC) spin torque oscillators as the representative of the fixed layer in an orthogonal pseudo-spin valve can be employed to design and to control magnetic droplet soliton nucleation and dynamics. We found that using a tilted spin polarizer layer decreases the droplet nucleation time which is more suitable for high speed applications. However, a tilted spin polarizer increases the nucleation current and decreases the frequency stability of the droplet. Additionally, by driving the magnetization inhomogenously at the NC region, it is found that a tilted spin polarizer reduces the precession angle of the droplet and through an interplay with the Oersted field of the DC current, it breaks the spatial symmetry of the droplet profile. Our findings explore fundamental insight into nano-scale magnetic droplet soliton dynamics with potential tunability parameters for future microwave electronics.

  4. TOPICAL REVIEW: Spin current, spin accumulation and spin Hall effect

    Directory of Open Access Journals (Sweden)

    Saburo Takahashi and Sadamichi Maekawa

    2008-01-01

    Full Text Available Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1 and detector (F2 electrodes connected to a normal conductor (N is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.

  5. Spin electronics

    CERN Document Server

    Buhrman, Robert; Daughton, James; Molnár, Stephan; Roukes, Michael

    2004-01-01

    This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterost...

  6. Spin glasses

    International Nuclear Information System (INIS)

    Fischer, K.H.; Hertz, J.A.

    1993-01-01

    Spin glasses, simply defined by the authors as a collection of spins (i.e., magnetic moments) whose low-temperature state is a frozen disordered one, represent one of the fascinating new fields of study in condensed matter physics, and this book is the first to offer a comprehensive account of the subject. Included are discussions of the most important developments in theory, experimental work, and computer modeling of spin glasses, all of which have taken place essentially within the last two decades. The first part of the book gives a general introduction to the basic concepts and a discussion of mean field theory, while the second half concentrates on experimental results, scaling theory, and computer simulation of the structure of spin glasses

  7. The role of interaction torque and muscle torque in the control of downward squatting

    OpenAIRE

    Fujisawa, Hiroyuki; Suzuki, Hiroto; Murakami, Kenichi; Kawakami, Shingo; Suzuki, Makoto

    2016-01-01

    [Purpose] The purposes of this study were first to analyze the multijoint dynamics of downward squatting, and to examine the contribution of interaction torque and muscle torque to net torque, and second, to examine mechanisms of movement control. [Subjects] The subjects were 31 healthy men with a mean age of 21.0 ? 1.2?years (range, 19?24?years). [Methods] Squatting tasks with the trunk in two positions, an erect and anterior tilt position, were performed by the subjects. Net, interaction, m...

  8. New Simple Torque-Sensorless Torque Control for Quasi-Perfect Compensation of 6th Harmonic Torque Ripple Due to Nonsinusoidal Distribution of Back EMF of PMSM

    Science.gov (United States)

    Shinnaka, Shinji; Kishida, Hideo

    This paper proposes a new torque-sensorless torque control method for permanent-magnet synchronous motors (PMSMs). The proposed method can almost perfectly compensate the 6th harmonic torque ripple that is caused by the nonsinusoidal distributions of the back EMF and rotor magnetic flux of PMSMs. The torque control system is, in principle, constructed on the basis of the vector control, but has two new dedicated speed-varying devices—a harmonic torque observer and current controller. The speed-varying harmonic torque observer can estimate the harmonic component over a wide speed range, even in the case where the produced torque is constant, and generate a suitable compensating signal. The speed-varying current controller shows stable control performance over a wide speed range, it can fully track the compensated current command containing the dc and 6th harmonic components. The effectiveness of the proposed method is examined and verified through extensive numerical experiments.

  9. Torque limit of PM motors for field-weakening region operation

    Science.gov (United States)

    Royak, Semyon [Beachwood, OH; Harbaugh, Mark M [Richfield, OH

    2012-02-14

    The invention includes a motor controller and technique for controlling a permanent magnet motor. In accordance with one aspect of the present technique, a permanent magnet motor is controlled by receiving a torque command, determining a physical torque limit based on a stator frequency, determining a theoretical torque limit based on a maximum available voltage and motor inductance ratio, and limiting the torque command to the smaller of the physical torque limit and the theoretical torque limit. Receiving the torque command may include normalizing the torque command to obtain a normalized torque command, determining the physical torque limit may include determining a normalized physical torque limit, determining a theoretical torque limit may include determining a normalized theoretical torque limit, and limiting the torque command may include limiting the normalized torque command to the smaller of the normalized physical torque limit and the normalized theoretical torque limit.

  10. Muscle response to pneumatic hand tool torque reaction forces.

    Science.gov (United States)

    Radwin, R G; VanBergeijk, E; Armstrong, T J

    1989-06-01

    Surface electromyography was used for studying the effects of torque reaction force acting against the hand, on forearm muscle activity and grip force for five subjects operating right angle, air shut-off nutrunners. Four tools having increasing spindle torque were operated using short and long torque reaction times. Nutrunner spindle torque ranged between 30 Nm and 100 Nm. Short torque reaction time was considered 0.5 s while long torque reaction time was 2 s. Peak horizontal force was the greatest component of the reaction force acting against the hand and accounted for more than 97% of the peak resultant hand force. Peak hand force increased from 89 N for the smallest tool to 202 N for the largest tool. Forearm muscle rms EMG, scaled for grip force, indicated average flexor activity during the Torque-reaction phase was more than four times greater than the Pre-start and Post Shut-off phases, and two times greater than the Run-down phase. Flexor EMG activity during the Torque-reaction phase increased for increasing tool peak spindle torque. Average flexor rms EMG activity, scaled for grip force, during the Torque-reaction phase increased from 372 N for the 30 Nm nutrunner to 449 N for the 100 Nm nutrunner. Flexor rms EMG activity averaged during the Torque-reaction phase and scaled for grip force was 390 N for long torque reaction times and increased to 440 N for short torque reaction times. Flexor rms EMG integrated over the torque reaction phase was 839 Ns for long torque reaction times and decreased to 312 Ns for short torque reaction times. The average latency between tool spindle torque onset and peak initial flexor rms EMG for long torque reaction times was 294 ms which decreased to 161 ms for short torque reaction times. The average latency between peak tool spindle torque, just prior to tool shut-off, and peak final rms EMG for long torque reaction times was 97 ms for flexors and 188 ms for extensors, which decreased for short torque reaction times to 47

  11. Micromagnetic investigation of the dynamics of magnetization switching induced by a spin polarized current

    Science.gov (United States)

    Lee, Kyung-Jin; Dieny, Bernard

    2006-03-01

    Using micromagnetic modeling, we tested a prediction of single-domain spin-torque theory which switching current density depends only weakly on magnetic cell size. The switching time and current density are strongly affected by the cell size for low spin polarization. Larger samples with a small length-to-width ratio and small spin polarization can exhibit a nonmonotonous dependence of switching time on current. Excitation of incoherent spin waves caused by the circular Oersted field due to the current is responsible for this nonmonotonous dependence. However, the magnetic dynamics recovers a single-domain-like behavior when the spin polarization is high and/or the cell size is small.

  12. Intrinsic spin dynamics in optically excited nanoscale magnetic tunnel junction arrays restored by dielectric coating

    Science.gov (United States)

    Jaris, M.; Yahagi, Y.; Mahato, B. K.; Dhuey, S.; Cabrini, S.; Nikitin, V.; Stout, J.; Hawkins, A. R.; Schmidt, H.

    2016-11-01

    We report the all-optical observation of intrinsic spin dynamics and extraction of magnetic material parameters from arrays of sub-100 nm spin-transfer torque magnetic random access memory (STT-MRAM) devices with a CoFeB/MgO interface. To this end, the interference of surface acoustic waves with time-resolved magneto-optic signals via magneto-elastic coupling was suppressed using a dielectric coating. The efficacy of this method is demonstrated experimentally and via modeling on a nickel nanomagnet array. The magnetization dynamics for both coated nickel and STT-MRAM arrays shows a restored field-dependent Kittel mode from which the effective damping can be extracted. We observe an increased low-field damping due to extrinsic contributions from magnetic inhomogeneities and variations in the nanomagnet shape, while the intrinsic Gilbert damping remains unaffected by patterning. The data are in excellent agreement with a local resonance model and have direct implications for the design of STT-MRAM devices as well as other nanoscale spintronic technologies.

  13. Application of spin-exchange relaxation-free magnetometry to the Cosmic Axion Spin Precession Experiment

    Science.gov (United States)

    Wang, Tao; Kimball, Derek F. Jackson; Sushkov, Alexander O.; Aybas, Deniz; Blanchard, John W.; Centers, Gary; Kelley, Sean R. O.'; Wickenbrock, Arne; Fang, Jiancheng; Budker, Dmitry

    2018-03-01

    The Cosmic Axion Spin Precession Experiment (CASPEr) seeks to measure oscillating torques on nuclear spins caused by axion or axion-like-particle (ALP) dark matter via nuclear magnetic resonance (NMR) techniques. A sample spin-polarized along a leading magnetic field experiences a resonance when the Larmor frequency matches the axion/ALP Compton frequency, generating precessing transverse nuclear magnetization. Here we demonstrate a Spin-Exchange Relaxation-Free (SERF) magnetometer with sensitivity ≈ 1 fT /√{ Hz } and an effective sensing volume of 0.1 cm3 that may be useful for NMR detection in CASPEr. A potential drawback of SERF-magnetometer-based NMR detection is the SERF's limited dynamic range. Use of a magnetic flux transformer to suppress the leading magnetic field is considered as a potential method to expand the SERF's dynamic range in order to probe higher axion/ALP Compton frequencies.

  14. Planetary Torque in 3D Isentropic Disks

    Energy Technology Data Exchange (ETDEWEB)

    Fung, Jeffrey [Department of Astronomy, University of California at Berkeley, Campbell Hall, Berkeley, CA 94720-3411 (United States); Masset, Frédéric; Velasco, David [Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Av. Universidad s/n, 62210 Cuernavaca, Mor. (Mexico); Lega, Elena, E-mail: jeffrey.fung@berkeley.edu [Université de la Côte d’Azur, Observatoire de la Côte d’Azur, CNRS, Laboratoire Lagrange UMR 7293, Nice (France)

    2017-03-01

    Planetary migration is inherently a three-dimensional (3D) problem, because Earth-size planetary cores are deeply embedded in protoplanetary disks. Simulations of these 3D disks remain challenging due to the steep resolution requirements. Using two different hydrodynamics codes, FARGO3D and PEnGUIn, we simulate disk–planet interaction for a one to five Earth-mass planet embedded in an isentropic disk. We measure the torque on the planet and ensure that the measurements are converged both in resolution and between the two codes. We find that the torque is independent of the smoothing length of the planet’s potential ( r {sub s}), and that it has a weak dependence on the adiabatic index of the gaseous disk ( γ ). The torque values correspond to an inward migration rate qualitatively similar to previous linear calculations. We perform additional simulations with explicit radiative transfer using FARGOCA, and again find agreement between 3D simulations and existing torque formulae. We also present the flow pattern around the planets that show active flow is present within the planet’s Hill sphere, and meridional vortices are shed downstream. The vertical flow speed near the planet is faster for a smaller r {sub s} or γ , up to supersonic speeds for the smallest r {sub s} and γ in our study.

  15. Are torque values of preadjusted brackets precise?

    Directory of Open Access Journals (Sweden)

    Alessandra Motta Streva

    Full Text Available OBJECTIVE: The aim of the present study was to verify the torque precision of metallic brackets with MBT prescription using the canine brackets as the representative sample of six commercial brands. MATERIAL AND METHODS: Twenty maxillary and 20 mandibular canine brackets of one of the following commercial brands were selected: 3M Unitek, Abzil, American Orthodontics, TP Orthodontics, Morelli and Ortho Organizers. The torque angle, established by reference points and lines, was measured by an operator using an optical microscope coupled to a computer. The values were compared to those established by the MBT prescription. RESULTS: The results showed that for the maxillary canine brackets, only the Morelli torque (-3.33º presented statistically significant difference from the proposed values (-7º. For the mandibular canines, American Orthodontics (-6.34º and Ortho Organizers (-6.25º presented statistically significant differences from the standards (-6º. Comparing the brands, Morelli presented statistically significant differences in comparison with all the other brands for maxillary canine brackets. For the mandibular canine brackets, there was no statistically significant difference between the brands. CONCLUSIONS: There are significant variations in torque values of some of the brackets assessed, which would clinically compromise the buccolingual positioning of the tooth at the end of orthodontic treatment.

  16. Planetary Torque in 3D Isentropic Disks

    International Nuclear Information System (INIS)

    Fung, Jeffrey; Masset, Frédéric; Velasco, David; Lega, Elena

    2017-01-01

    Planetary migration is inherently a three-dimensional (3D) problem, because Earth-size planetary cores are deeply embedded in protoplanetary disks. Simulations of these 3D disks remain challenging due to the steep resolution requirements. Using two different hydrodynamics codes, FARGO3D and PEnGUIn, we simulate disk–planet interaction for a one to five Earth-mass planet embedded in an isentropic disk. We measure the torque on the planet and ensure that the measurements are converged both in resolution and between the two codes. We find that the torque is independent of the smoothing length of the planet’s potential ( r s ), and that it has a weak dependence on the adiabatic index of the gaseous disk ( γ ). The torque values correspond to an inward migration rate qualitatively similar to previous linear calculations. We perform additional simulations with explicit radiative transfer using FARGOCA, and again find agreement between 3D simulations and existing torque formulae. We also present the flow pattern around the planets that show active flow is present within the planet’s Hill sphere, and meridional vortices are shed downstream. The vertical flow speed near the planet is faster for a smaller r s or γ , up to supersonic speeds for the smallest r s and γ in our study.

  17. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    International Nuclear Information System (INIS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-01-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

  18. Spin relaxation in disordered media

    International Nuclear Information System (INIS)

    Dzheparov, F S

    2011-01-01

    A review is given on theoretical grounds and typical experimental appearances of spin dynamics and relaxation in solids containing randomly distributed nuclear and/or electronic spins. Brief content is as follows. Disordered and magnetically diluted systems. General outlines of the spin transport theory. Random walks in disordered systems (RWDS). Observable values in phase spin relaxation, free induction decay (FID). Interrelation of longitudinal and transversal relaxation related to dynamics of occupancies and phases. Occupation number representation for equations of motion. Continuum media approximation and inapplicability of moment expansions. Long-range transitions vs percolation theory. Concentration expansion as a general constructive basis for analytical methods. Scaling properties of propagators. Singular point. Dynamical and kinematical memory in RWDS. Ways of regrouping of concentration expansions. CTRW and semi-phenomenology. Coherent medium approximation for nuclear relaxation via paramagnetic impurities. Combining of memory functions and cumulant expansions for calculation of FID. Path integral representations for RWDS. Numerical simulations of RWDS. Spin dynamics in magnetically diluted systems with low Zeeman and medium low dipole temperatures. Cluster expansions, regularization of dipole interactions and spectral dynamics.

  19. Stabilization of Rigid Body Dynamics by Internal and External Torques

    National Research Council Canada - National Science Library

    Bloch, A. M; Krishnaprasad, P. S; Marsden, J. E; Sanchez de Alvarez, G

    1990-01-01

    ...] with quadratic feedback torques for internal rotors. We show that with such torques, the equations for the rigid body with momentum wheels are Hamiltonian with respect to a Lie-Poisson bracket structure. Further...

  20. Comparison of Stretch Reflex Torques in Ankle Dorsiflexors and Plantarflexors

    National Research Council Canada - National Science Library

    Tung, J

    2001-01-01

    ...) ankle muscles, Pulse, step, and a combination of random perturbation and step inputs were used to identify the reflex and intrinsic contributions to the measured torque, TA reflex torques were very...

  1. TIDAL FRICTION AND TIDAL LAGGING. APPLICABILITY LIMITATIONS OF A POPULAR FORMULA FOR THE TIDAL TORQUE

    International Nuclear Information System (INIS)

    Efroimsky, Michael; Makarov, Valeri V.

    2013-01-01

    Tidal torques play a key role in rotational dynamics of celestial bodies. They govern these bodies' tidal despinning and also participate in the subtle process of entrapment of these bodies into spin-orbit resonances. This makes tidal torques directly relevant to the studies of habitability of planets and their moons. Our work begins with an explanation of how friction and lagging should be built into the theory of bodily tides. Although much of this material can be found in various publications, a short but self-consistent summary on the topic has been lacking in the hitherto literature, and we are filling the gap. After these preparations, we address a popular concise formula for the tidal torque, which is often used in the literature, for planets or stars. We explain why the derivation of this expression, offered in the paper by Goldreich and in the books by Kaula (Equation (4.5.29)) and Murray and Dermott (Equation (4.159)), implicitly sets the time lag to be frequency independent. Accordingly, the ensuing expression for the torque can be applied only to bodies having a very special (and very hypothetical) rheology which makes the time lag frequency independent, i.e., the same for all Fourier modes in the spectrum of tide. This expression for the torque should not be used for bodies of other rheologies. Specifically, the expression cannot be combined with an extra assertion of the geometric lag being constant, because at finite eccentricities the said assumption is incompatible with the constant-time-lag condition.

  2. TIDAL FRICTION AND TIDAL LAGGING. APPLICABILITY LIMITATIONS OF A POPULAR FORMULA FOR THE TIDAL TORQUE

    Energy Technology Data Exchange (ETDEWEB)

    Efroimsky, Michael; Makarov, Valeri V., E-mail: michael.efroimsky@usno.navy.mil, E-mail: vvm@usno.navy.mil [US Naval Observatory, Washington, DC 20392 (United States)

    2013-02-10

    Tidal torques play a key role in rotational dynamics of celestial bodies. They govern these bodies' tidal despinning and also participate in the subtle process of entrapment of these bodies into spin-orbit resonances. This makes tidal torques directly relevant to the studies of habitability of planets and their moons. Our work begins with an explanation of how friction and lagging should be built into the theory of bodily tides. Although much of this material can be found in various publications, a short but self-consistent summary on the topic has been lacking in the hitherto literature, and we are filling the gap. After these preparations, we address a popular concise formula for the tidal torque, which is often used in the literature, for planets or stars. We explain why the derivation of this expression, offered in the paper by Goldreich and in the books by Kaula (Equation (4.5.29)) and Murray and Dermott (Equation (4.159)), implicitly sets the time lag to be frequency independent. Accordingly, the ensuing expression for the torque can be applied only to bodies having a very special (and very hypothetical) rheology which makes the time lag frequency independent, i.e., the same for all Fourier modes in the spectrum of tide. This expression for the torque should not be used for bodies of other rheologies. Specifically, the expression cannot be combined with an extra assertion of the geometric lag being constant, because at finite eccentricities the said assumption is incompatible with the constant-time-lag condition.

  3. Increasing Elbow Torque Output of Stroke Patients by EMG-Controlled External Torque

    National Research Council Canada - National Science Library

    Lin, C

    2001-01-01

    .... The control signal to the manipulator is the difference between the weighted biceps and triceps EMG, so that the system moves with the forearm and provides assisting torque proportional to the voluntary effort...

  4. Direct Torque Control of Asynchronous Motor With Fuzzy Logic Swithching

    OpenAIRE

    KORKMAZ, Fatih; KORKMAZ, Yılmaz

    2011-01-01

    control method in asynchronous motors, are known as high speed and torque ripples. In this study, direct torque control with fuzzy logic based switching method have been studied in order to reduce the speed and torque ripples which occurs during the direct torque control of asynchronous motors. Hysteresis controllers and vector selector that used in conventional control were removed, and fuzzy logic based switching method was used instead of them. Conventional and fuzzy control methods were s...

  5. Spin manipulation and spin-lattice interaction in magnetic colloidal quantum dots

    Science.gov (United States)

    Moro, Fabrizio; Turyanska, Lyudmila; Granwehr, Josef; Patanè, Amalia

    2014-11-01

    We report on the spin-lattice interaction and coherent manipulation of electron spins in Mn-doped colloidal PbS quantum dots (QDs) by electron spin resonance. We show that the phase memory time,TM , is limited by Mn-Mn dipolar interactions, hyperfine interactions of the protons (1H) on the QD capping ligands with Mn ions in their proximity (Rabi oscillations. Our findings suggest routes to the rational design of magnetic colloidal QDs with phase memory times exceeding the current limits of relevance for the implementation of QDs as qubits in quantum information processing.

  6. Improved direct torque control of induction motor with dither injection

    Indian Academy of Sciences (India)

    dither signal is injected of minute amplitude (5% of rated torque and 5% of reference flux as hysteresis band in torque control and flux control loops respectively) in the error block. The optimal value of dither frequency and magnitude is found out under free running condition. This technique gives minimum torque ripple, low ...

  7. Calculation of Cogging Torque in Hybrid Stepping Motors | Agber ...

    African Journals Online (AJOL)

    When the windings of a hybrid stepping motor are unexcited the permanent magnet's flux produces cogging torque. This torque has both desirable and undesirable features depending on the application that the motor is put into. This paper formulates an analytical method for predicting cogging torque using measured ...

  8. Improved direct torque control of induction motor with dither injection

    Indian Academy of Sciences (India)

    Abstract. In this paper, a three-level inverter-fed induction motor drive operating under Direct Torque Control (DTC) is presented. A triangular wave is used as dither signal of minute amplitude (for torque hysteresis band and flux hysteresis band respectively) in the error block. This method minimizes flux and torque ripple in ...

  9. [Influence of slot size on torque control].

    Science.gov (United States)

    Tian, Jun; Liu, Zhong-Hao; Zhang, Ding; Wu, Chuan-Jun

    2009-12-01

    To study the influence of two slot size brackets on torque control when teeth interacted in the same arch. After the upper arch was aligned and leveled in Typodont study, the inclinations of upper teeth 5 +/- 5 were measured when 0.457 2 mm x 0.635 0 mm OPA-K brackets and 0.558 8 mmx0.711 2 mm OPA-K brackets were filled with 0.431 8 mm x 0.635 0 mm stainless steel wire. This experiment was duplicated 10 times. The inclin of each tooth were transformed to the absolute values of the torque play angle psi by computing program, and paired-t test was used. The two kinds of slot size brackets were different with statistical significance on torque control. When the brackets were filled with 0.431 8 mm x 0.635 0 mm stainless steel wire, the absolute values of the angle psi in 0.558 8 mm x 0.711 2 mm and 0.457 2 mm x 0.635 0 mm slot size brackets were 6.140 degrees +/- 3.758 degrees and 2.608 degrees +/- 1.479 degrees respectively, and the average difference of that between the two slot size brackets was 3.532 degrees. The absolute values of the angle psi in the upper left and right canine brackets were 2.560 degrees +/- 2.605 degrees, 4.230 degrees +/- 2.817 degrees, 1.260 degrees +/- 0.747 degrees and 2.070 degrees +/- 0.663 degrees respectively, and average differences between them were smaller than that in the other teeth. There was difference between the two kinds of slot size brackets on torque control, and 0.457 2 mm x 0.635 0 mm slot size bracket controls torque better when filled with the same size wire. In this study, the teeth interaction in the same arch probably caused the result that the difference of two slot size brackets on torque control was less than the study results of the theory calculations and material studys before.

  10. Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

    Science.gov (United States)

    Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.

    2018-04-01

    Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.

  11. Interference Spins

    DEFF Research Database (Denmark)

    Popovski, Petar; Simeone, Osvaldo; Nielsen, Jimmy Jessen

    2015-01-01

    on traffic load and interference condition leads to performance gains. In this letter, a general network of multiple interfering two-way links is studied under the assumption of a balanced load in the two directions for each link. Using the notion of interference spin, we introduce an algebraic framework...

  12. Spinning worlds

    NARCIS (Netherlands)

    Schwarz, H.

    2017-01-01

    The thesis "Spinning Worlds" is about the characterisation of two types of gas-giant exoplanets: Hot Jupiters, with orbital periods of fewer than five days, and young, wide-orbit gas giants, with orbital periods as long as thousands of years. The thesis is based on near-infrared observations of 1

  13. Static magnetic forces and torques in ATLAS

    International Nuclear Information System (INIS)

    Morozov, N.A.; Samsonov, E.V.; Vorozhtsov, S.B.

    1998-01-01

    The magnetic forces acting on the various metallic objects around the ATLAS detector, are the subject of the given paper. A system designer could use the information on global forces and torque acting on various components, obtained in this report, to optimize them. The results of force calculations could also serve as additional criteria for the replacement of the magnetic baseline material of various structures by nonmagnetic ones

  14. An ironless armature brushless torque motor

    Science.gov (United States)

    Studer, P. A.

    1973-01-01

    A high torque motor with improved servo mechanism is reported. Armature windings are cast into an epoxy cylinder and armature conductors are integrally cast with an aluminum mounting ring which provides thermal conductance directly into the structure. This configuration eliminates magnetic hysteresis because there is no relative motion between the rotating magnetic field and any stationary iron. The absence of destabilization forces provides a fast electrical response compared with a typical torquer of conventional construction.

  15. Issues related to YIG spintronics - thin film growth, spin pumping efficiency, and spin current generation

    Science.gov (United States)

    Wu, Mingzhong

    2014-03-01

    If a magnetic field is applied to a magnetic material, the field produces a torque on the magnetization of the material and drives it to precess. This precession is similar to the motion of a spinning top where the gravitational field produces a torque, instead of the magnetic field. It turns out that magnetization precession in yttrium iron garnets (YIG) decays slower than in any other known magnetic materials. This fact gives rise to the recent birth of a new paradigm in the discipline of spintronics - ``spintronics using YIG.'' This talk will touch on several topics related to YIG spintronics. The first part will demonstrate the feasibility of the use of pulsed laser deposition and magnetron sputtering to grow low-damping, nanometer-thick YIG films. The second part will address the efficiency of spin angular momentum transfer across YIG/normal metal interfaces. The last part will report on the use of YIG thin films to produce pure spin currents; Detailed discussions will be provided on the comparison between spin current generations using traveling spin waves and uniform ferromagnetic resonance modes, the field dependence of spin current generation, and spin current enhancement in YIG/Pt structures via the use of a thin Cu spacer. This work was supported in part by U.S. National Science Foundation (No. ECCS-1231598), the U.S. Army Research Office (No. W911NF-12-1-0518, No. W911NF-11-C-0075), and the U.S. National Institute of Standards and Technology (No. 60NANB10D011).

  16. Magnetorheological torque transmission devices with permanent magnets

    Science.gov (United States)

    Böse, H.; Gerlach, T.; Ehrlich, J.

    2013-02-01

    A novel type of magnetorheological (MR) clutch whose magnetic circuit contains a combination of a permanent magnet and an electromagnet is described. Without the support of the electromagnet, the permanent magnet generates a magnetic field in the MR fluid shear gap which enables the MR clutch to transmit a torque without the supply of any electric energy. Hence, the operational states of this clutch are reversed with respect to the common MR clutches equipped with an electromagnet only. Three different MR clutches with hybrid magnetic circuits containing permanent magnet and electromagnet were designed, manufactured and tested. The three clutches differ in their number of mechanical parts which can rotate with respect to each other as well as in their size and weight and in their maximum transmittable torque. The largest MR clutch is capable to transmit torques up to nearly 800 Nm. The designs of the three novel MR clutches and the results of the mechanical tests upon variation of the coil current are presented in this paper.

  17. Real time implementation of viable torque and flux controllers and torque ripple minimization algorithm for induction motor drive

    International Nuclear Information System (INIS)

    Vasudevan, M.; Arumugam, R.; Paramasivam, S.

    2006-01-01

    Field oriented control (FOC) and direct torque control (DTC) are becoming the industrial standards for induction motors torque and flux control. This paper aims to give a contribution for a detailed comparison between these two control techniques, emphasizing their advantages and disadvantages. The performance of these two control schemes is evaluated in terms of torque and flux ripple and their transient response to step variations of the torque command. Moreover, a new torque and flux ripple minimization technique is also proposed to improve the performance of the DTC drive. Based on the experimental results, the analysis has been presented

  18. Spin transport in normal and superconducting nanowires

    OpenAIRE

    Poli, Ninos

    2007-01-01

    Todays conventional electronic devices are based on electron charge transport in semiconductor channels. Spintronics is a rapidly emerging technology, which exploits the spin degree of freedom as well as the charge of the electrons. It is believed that extending conventional electronics to spin-electronics can yield devices with new functionality and result in new large scale applications. Examples of already existing spintronic technology are the magnetic random access memory, magneto-resist...

  19. Shot noise of charge and spin transport in a junction with a precessing molecular spin

    Science.gov (United States)

    Filipović, Milena; Belzig, Wolfgang

    2018-03-01

    Magnetic molecules and nanomagnets can be used to influence the electronic transport in mesoscopic junction. In a magnetic field, the precessional motion leads to resonances in the dc- and ac-transport properties of a nanocontact, in which the electrons are coupled to the precession. Quantities such as the dc conductance or the ac response provide valuable information, such as the level structure and the coupling parameters. Here, we address the current-noise properties of such contacts. This encompasses the charge current and spin-torque shot noise, which both show a steplike behavior as functions of bias voltage and magnetic field. The charge-current noise shows pronounced dips around the steps, which we trace back to interference effects of electrons in quasienergy levels coupled by the molecular spin precession. We show that some components of the noise of the spin-torque currents are directly related to the Gilbert damping, and hence are experimentally accessible. Our results show that the noise characteristics allow us to investigate in more detail the coherence of spin transport in contacts containing magnetic molecules.

  20. Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance and correlation effects in a Co(0001 )/h -BN/Co(0001 ) magnetic tunnel junction

    Science.gov (United States)

    Faleev, Sergey V.; Parkin, Stuart S. P.; Mryasov, Oleg N.

    2015-12-01

    The Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance (TMR) is described for magnetic tunnel junctions (MTJs) and studied for an example of the MTJ with hcp Co electrodes and hexagonal BN (h -BN) spacer. Our calculations based on the local density approximation of density-functional theory (LDA-DFT) for Co(0001 )/h -BN/Co(0001 ) MTJ predict high TMR in this device due to Brillouin zone filtering mechanism. Owning to the specific complex band structure of the h -BN the spin-dependent tunneling conductance of the system is ultrasensitive to small variations of the Fermi energy position inside the BN band gap. Doping of the BN and, consequentially, changing the Fermi energy position could lead to variation of the TMR by several orders of magnitude. We show also that taking into account correlation effects on beyond DFT level is required to accurately describe position of the Fermi level and thus transport properties of the system. Our study suggests that new MTJ based on hcp Co-Pt or Co-Pd disordered alloy electrodes and p -doped hexagonal BN spacer is a promising candidate for the spin-transfer torque magnetoresistive random-access memory.

  1. Bevel gear driver and method having torque limit selection

    Science.gov (United States)

    Cook, Joseph S., Jr.

    1994-08-01

    This invention comprises a torque drive mechanism utilizing axially translatable, mutually engageable transmission members having mating crown gears, driven and driving members with a three-element drive train being biased together by resilient means or by a fluid actuator system, the apparatus being operable to transmit a precisely controlled degree of torque to a driven member. The apparatus is applicable for use in hand tools and as a replacement for impact torque drivers, torque wrenches, motorized screw drivers, or the like, wherein the applied torque must be precisely controlled or limited. The bevel torque drive includes a drive gear which is axially displaceable and rotatable within cylindrical driver housing, a rotatable intermediate gear, and an output gear. Key rotationally secures displaceable gear with respect to input shaft but permits axial movement therebetween. A thrust bearing is preferably connected to the lower end of shaft for support to reduce play and friction between shaft and a transmission joint disc during rotation of the gear train. Coaxially mounted coiled spring is footed against displaceable gear for biasing the displaceable gear toward and into engagement with the intermediate gear for driving intermediate gear and output gear. Torque control is achieved by the use of straight or spiral beveled gears which are of configurations adapted to withdraw from mutual engagement upon the torque exceeding a predetermined limit. The novel, advantageous features of the invention include the configuration of the mating, crown gear sets and the axially translatable, slidable drive gear. The mechanism is capable of transmitting a high degree of torque within a narrow, compact transmission housing. The compact size and narrow, elongated configuration of the housing is particularly applicable for use in hand tools and in multiple torque driver mechanisms in which it is necessary to drive multiple fasteners which are located in close proximity. Prior

  2. Soft-error tolerance and energy consumption evaluation of embedded computer with magnetic random access memory in practical systems using computer simulations

    Science.gov (United States)

    Nebashi, Ryusuke; Sakimura, Noboru; Sugibayashi, Tadahiko

    2017-08-01

    We evaluated the soft-error tolerance and energy consumption of an embedded computer with magnetic random access memory (MRAM) using two computer simulators. One is a central processing unit (CPU) simulator of a typical embedded computer system. We simulated the radiation-induced single-event-upset (SEU) probability in a spin-transfer-torque MRAM cell and also the failure rate of a typical embedded computer due to its main memory SEU error. The other is a delay tolerant network (DTN) system simulator. It simulates the power dissipation of wireless sensor network nodes of the system using a revised CPU simulator and a network simulator. We demonstrated that the SEU effect on the embedded computer with 1 Gbit MRAM-based working memory is less than 1 failure in time (FIT). We also demonstrated that the energy consumption of the DTN sensor node with MRAM-based working memory can be reduced to 1/11. These results indicate that MRAM-based working memory enhances the disaster tolerance of embedded computers.

  3. Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

    Science.gov (United States)

    Figueroa, A. I.; Baker, A. A.; Collins-McIntyre, L. J.; Hesjedal, T.; van der Laan, G.

    2016-02-01

    In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics.

  4. A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

    Energy Technology Data Exchange (ETDEWEB)

    De, Arup [Univ. of California, San Diego, CA (United States)

    2014-01-01

    Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

  5. In a spin at Brookhaven spin physics

    CERN Document Server

    Makdisi, Y I

    2003-01-01

    The mysterious quantity that is spin took centre stage at Brookhaven for the SPIN2002 meeting last September. The 15th biennial International Spin Physics Symposium (SPIN2002) was held at Brookhaven National Laboratory on 9-14 September 2002. Some 250 spin enthusiasts attended, including experimenters and theorists in both nuclear and high-energy physics, as well as accelerator physicists and polarized target and polarized source experts. The six-day symposium included 23 plenary talks and 150 parallel talks. SPIN2002 was preceded by a one-day spin physics tutorial for students, postdocs, and anyone else who felt the need for a refresher course. (2 refs).

  6. Spin-Circuit Representation of Spin Pumping

    Science.gov (United States)

    Roy, Kuntal

    2017-07-01

    Circuit theory has been tremendously successful in translating physical equations into circuit elements in an organized form for further analysis and proposing creative designs for applications. With the advent of new materials and phenomena in the field of spintronics and nanomagnetics, it is imperative to construct the spin-circuit representations for different materials and phenomena. Spin pumping is a phenomenon by which a pure spin current can be injected into the adjacent layers. If the adjacent layer is a material with a high spin-orbit coupling, a considerable amount of charge voltage can be generated via the inverse spin Hall effect allowing spin detection. Here we develop the spin-circuit representation of spin pumping. We then combine it with the spin-circuit representation for the materials having spin Hall effect to show that it reproduces the standard results as in the literature. We further show how complex multilayers can be analyzed by simply writing a netlist.

  7. Spin Coherence in Semiconductor Nanostructures

    National Research Council Canada - National Science Library

    Flatte, Michael E

    2006-01-01

    ... dots, tuning of spin coherence times for electron spin, tuning of dipolar magnetic fields for nuclear spin, spontaneous spin polarization generation and new designs for spin-based teleportation and spin transistors...

  8. Experimental Evidence of Self-Localized and Propagating Spin Wave Modes in Obliquely Magnetized Current-Driven Nanocontacts

    Science.gov (United States)

    Bonetti, Stefano; Tiberkevich, Vasil; Consolo, Giancarlo; Finocchio, Giovanni; Muduli, Pranaba; Mancoff, Fred; Slavin, Andrei; Åkerman, Johan

    2010-11-01

    Through detailed experimental studies of the angular dependence of spin wave excitations in nanocontact-based spin-torque oscillators, we demonstrate that two distinct spin wave modes can be excited, with different frequency, threshold currents, and frequency tunability. Using analytical theory and micromagnetic simulations we identify one mode as an exchange-dominated propagating spin wave, and the other as a self-localized nonlinear spin wave bullet. Wavelet-based analysis of the simulations indicates that the apparent simultaneous excitation of both modes results from rapid mode hopping induced by the Oersted field.

  9. Factor Analysis on Cogging Torques in Segment Core Motors

    Science.gov (United States)

    Enomoto, Yuji; Kitamura, Masashi; Sakai, Toshihiko; Ohara, Kouichiro

    The segment core method is a popular method employed in motor core manufacturing; however, this method does not allow the stator core precision to be enhanced because the stator is assembled from many cores. The axial eccentricity of rotor and stator and the internal roundness of the stator core are regarded as the main factors which affect cogging torque. In the present study, the way in which a motor with a split-type stator generates a cogging torque is investigated to determine whether high- precision assembly of stator cores can reduce cogging torque. Here, DC brushless motors were used to verify the influence of stator-rotor eccentricity and roundness of the stator bore on cogging torque. The evaluation results prove the feasibility of reducing cogging torque by improving the stator core precision. Therefore, improving the eccentricity and roundness will enable stable production of well controlled motors with few torque ripples.

  10. Direct Torque Control of Matrix Converter Fed Induction Motor Drive

    Directory of Open Access Journals (Sweden)

    JAGADEESAN Karpagam

    2011-10-01

    Full Text Available This paper presents the Direct TorqueControl (DTC of induction motor drive using matrixconverters. DTC is a high performance motor controlscheme with fast torque and flux responses. However,the main disadvantage of conventional DTC iselectromagnetic torque ripple. In this paper, directtorque control for Induction Motors using MatrixConverters is analysed and points out the problem ofthe electromagnetic torque ripple which is one of themost important drawbacks of the Direct TorqueControl. Besides, the matrix converter is a single-stageac-ac power conversion device without dc-link energystorage elements. Matrix converter (MC may becomea good alternative to voltage-source inverter (VSI.This work combines the advantages of the matrixconverter with those of the DTC technique, generatingthe required voltage vectors under unity input powerfactor operation. Simulation results demonstrates theeffectiveness of the torque control.

  11. Cantilever torque magnetometry on coordination compounds

    DEFF Research Database (Denmark)

    Perfetti, Mauro

    2017-01-01

    Cantilever Torque Magnetometry (CTM) is one of the leading techniques to deeply understand magnetic anisotropy of coordination compounds. The knowledge of magnetic anisotropy is a mandatory requirement before proceeding with any future application related to the magnetic properties of coordination...... quantum phenomena such as magnetization steps and molecular hysteresis curves. Moreover, it can also provide the energy levels splitting and avefunctions composition, especially if coupled with microwave radiation....... compounds, such as quantum computation or information storage. This review enlightens that CTM offers a unique combination of accuracy and precision to disentangle noncollinear contributions inside Single Crystals as well as the sensitivity to detect molecular order of thin films. CTM can also detect...

  12. Motor Torque Calculations For Electric Vehicle

    Directory of Open Access Journals (Sweden)

    Saurabh Chauhan

    2015-08-01

    Full Text Available Abstract It is estimated that 25 of the total cars across the world will run on electricity by 2025. An important component that is an integral part of all electric vehicles is the motor. The amount of torque that the driving motor delivers is what plays a decisive role in determining the speed acceleration and performance of an electric vehicle. The following work aims at simplifying the calculations required to decide the capacity of the motor that should be used to drive a vehicle of particular specifications.

  13. Muscle torque preservation and physical activity in individuals with stroke.

    Science.gov (United States)

    Eng, Janice J; Lomaglio, Melanie J; Macintyre, Donna L

    2009-07-01

    A greater percent loss of concentric versus eccentric muscle torque (i.e., relative eccentric muscle torque preservation) has been reported in the paretic limb of individuals with stroke and has been attributed to hypertonia and/or cocontractions. Stroke provides a unique condition for examining mechanisms underlying eccentric muscle preservation because both limbs experience similar amounts of general physical activity, but the paretic side is impaired directly by the brain lesion. The purpose of this study was to determine 1) whether eccentric preservation also exists in the nonparetic limb and 2) the relationship of eccentric or concentric torque preservation with physical activity in stroke. We hypothesized that the nonparetic muscles would demonstrate eccentric muscle preservation, which would suggest that nonneural mechanisms may also contribute to its relative preservation. Eighteen patients who had stroke and 18 healthy control subjects (age- and sex-matched) completed a physical activity questionnaire. Maximum voluntary concentric and eccentric joint torques of the ankle, knee, and hip flexors and extensors were measured using an isokinetic dynamometer at 30 degrees x s(-1) for the paretic and nonparetic muscles. Relative concentric and eccentric peak torque preservations were expressed as a percentage of control subject torque. Relative eccentric torque was higher (more preserved) than relative concentric torque for paretic and nonparetic muscles. Physical activity correlated with paretic (r = 0.640, P = 0.001) and nonparetic concentric torque preservation (r = 0.508, P = 0.009) but not with eccentric torque preservation for either leg. The relative preservation of eccentric torque in the nonparetic muscles suggest a role of nonneural mechanisms and could also explain the preservation observed in other chronic health conditions. Loss of concentric, but not eccentric, muscle torque was related to physical inactivity in stroke.

  14. Efficient spin transitions in inelastic electron tunneling spectroscopy.

    Science.gov (United States)

    Lorente, Nicolás; Gauyacq, Jean-Pierre

    2009-10-23

    The excitation of the spin degrees of freedom of an adsorbed atom by tunneling electrons is computed using strong coupling theory. Recent measurements [Heinrich, Science 306, 466 (2004)] reveal that electron currents in a magnetic system efficiently excite its magnetic moments. Our theory shows that the incoming electron spin strongly couples with that of the adsorbate so that memory of the initial spin state is lost, leading to large excitation efficiencies. First-principles transmissions are evaluated in quantitative agreement with the experiment.

  15. Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.; Wan, C.H., E-mail: wancaihua@iphy.ac.cn; Yuan, Z.H.; Fang, C.; Kong, W.J.; Wu, H.; Zhang, Q.T.; Tao, B.S.; Han, X.F., E-mail: xfhan@iphy.ac.cn

    2017-04-15

    Confronting with the gigantic volume of data produced every day, raising integration density by reducing the size of devices becomes harder and harder to meet the ever-increasing demand for high-performance computers. One feasible path is to actualize more logic functions in one cell. In this respect, we experimentally demonstrate a prototype spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR). The cell can be easily programmed and reprogrammed to perform desired function. Furthermore, the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells. This work provides a prospective example of multi-functional spin logic cell with reprogrammability and nonvolatility, which will advance the application of spin logic devices. - Highlights: • Experimental demonstration of spin logic cell based on spin Hall effect. • Five logic functions are realized in a single logic cell. • The logic cell is reprogrammable. • Information in the cell is symmetry-protected. • The logic cell can be easily expanded to logic gate array.

  16. Position Sensorless Speed Estimation in Switched Reluctance Motor Drive with Direct Torque Control

    Science.gov (United States)

    Kucuk, Fuat; Goto, Hiroki; Guo, Hai-Jiao; Ichinokura, Osamu

    Feedback signals of rotor speed and motor torque are essential in most of Switched Reluctance (SR) motor control applications. An SR motor has highly nonlinear characteristic that does not allow to be modeled by simple equations. In Direct Torque Control (DTC) drive, which enables easy control of torque ripple in the SR motor, position sensor is employed to obtain the feedback signals. Position sensor causes DTC drive not only less reliable but also more expensive. Estimation of feedback signals is required in order to eliminate position sensor. This paper concerns about sensorless speed estimation under the DTC condition and presents a simple method. Simple sensorless speed estimation is proposed based on inductance vector angle. The inductance vector angle is obtained by applying α-β transformation to the phase inductances. A relay triggers a speed calculation circuit according to its band limits and the inductance vector angle. Inside the circuit, triggering time is kept in a memory until the next triggering. Rotor pole pitch is divided by the time difference between two consecutive triggerings. Finally, the estimation circuit outputs the rotor speed. Sensorless speed estimation is simulated and verified experimentally to show its validity.

  17. High-Frequency Dynamics Modulated by Collective Magnetization Reversal in Artificial Spin Ice

    Energy Technology Data Exchange (ETDEWEB)

    Jungfleisch, Matthias B.; Sklenar, Joseph; Ding, Junjia; Park, Jungsik; Pearson, John E.; Novosad, Valentine; Schiffer, Peter; Hoffmann, Axel

    2017-12-01

    Spin-torque ferromagnetic resonance arises in heavy metal-ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic magnetoresistance, which is the change in the electrical resistance due to different orientations of the magnetization. In connected networks of ferromagnetic nanowires, known as artificial spin ice, the magnetoresistance is rather complex owing to the underlying collective behavior of the geometrically frustrated magnetic domain structure. Here, we demonstrate spin-torque ferromagnetic resonance investigations in a square artificial spin-ice system and correlate our observations to magneto-transport measurements. The experimental findings are described using a simulation approach that highlights the importance of the correlated dynamics response of the magnetic system. Our results open the possibility of designing reconfigurable microwave oscillators and magnetoresistive devices based on connected networks of nanomagnets.

  18. Storing quantum information in spins and high-sensitivity ESR

    Science.gov (United States)

    Morton, John J. L.; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

  19. Storing quantum information in spins and high-sensitivity ESR.

    Science.gov (United States)

    Morton, John J L; Bertet, Patrice

    2018-02-01

    Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

  20. Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, A.I., E-mail: aifigueg@gmail.com [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Baker, A.A. [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Collins-McIntyre, L.J.; Hesjedal, T. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU (United Kingdom); Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom)

    2016-02-15

    In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics. - Highlights: • X-ray detected ferromagnetic resonance is used to study the spin pumping phenomenon. • We show a powerful way to get information of spin transfer between magnetic layers. • We observe spin pumping through a topological insulators at room temperature. • Topological insulators function as efficient spin sinks.

  1. Spin pumping through a topological insulator probed by x-ray detected ferromagnetic resonance

    International Nuclear Information System (INIS)

    Figueroa, A.I.; Baker, A.A.; Collins-McIntyre, L.J.; Hesjedal, T.; Laan, G. van der

    2016-01-01

    In the field of spintronics, the generation of a pure spin current (without macroscopic charge flow) through spin pumping of a ferromagnetic (FM) layer opens up the perspective of a new generation of dissipation-less devices. Microwave driven ferromagnetic resonance (FMR) can generate a pure spin current that enters adjacent layers, allowing for both magnetization reversal (through spin-transfer torque) and to probe spin coherence in non-magnetic materials. However, standard FMR is unable to probe multilayer dynamics directly, since the measurement averages over the contributions from the whole system. The synchrotron radiation-based technique of x-ray detected FMR (XFMR) offers an elegant solution to this drawback, giving access to element-, site-, and layer-specific dynamical measurements in heterostructures. In this work, we show how XFMR has provided unique information to understand spin pumping and spin transfer torque effects through a topological insulator (TI) layer in a pseudo-spin valve heterostructure. We demonstrate that TIs function as efficient spin sinks, while also allowing a limited dynamic coupling between ferromagnetic layers. These results shed new light on the spin dynamics of this novel class of materials, and suggest future directions for the development of room temperature TI-based spintronics. - Highlights: • X-ray detected ferromagnetic resonance is used to study the spin pumping phenomenon. • We show a powerful way to get information of spin transfer between magnetic layers. • We observe spin pumping through a topological insulators at room temperature. • Topological insulators function as efficient spin sinks.

  2. Dynamics of the conservative and dissipative spin-orbit problem

    CERN Document Server

    Celletti, A; Lega, E

    2006-01-01

    We investigate the dynamics of the spin--orbit coupling under different settings. First we consider the conservative problem, and then we add a dissipative torque as provided by MacDonald's or Darwin's models. By means of frequency analysis and of the computation of the maximum Lyapunov indicator we explore the different dynamical behaviors associated to the main resonances. In particular we focus on the 1:1 and 3:2 resonances in which the Moon and Mercury are actually trapped.

  3. Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers

    KAUST Repository

    Shao, Qiming

    2016-11-18

    The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.

  4. Spin equilibrium with or without gravitational wave emission: the case of XTE J1814-338 and SAX J1808.4-3658

    NARCIS (Netherlands)

    Haskell, B.D.L.; Patruno, A.

    2011-01-01

    In this Letter we present a new analysis of the torques acting on the accreting millisecond X-ray pulsars SAX J1808.4-3658 and XTE J1814-338, and show how our results can be used to constrain theoretical models of the spin evolution. In particular, we find upper limits on any spin-up/down phase of

  5. Giant thermal spin-torque–assisted magnetic tunnel junction switching

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P.; Yang, See-Hun; Parkin, Stuart S. P.

    2015-01-01

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. PMID:25971730

  6. Heat and spin interconversion

    International Nuclear Information System (INIS)

    Ohnuma, Yuichi; Matsuo, Mamoru; Maekawa, Sadamichi; Saitoh, Eeiji

    2017-01-01

    Spin Seebeck and spin Peltier effects, which are mutual conversion phenomena of heat and spin, are discussed on the basis of the microscopic theory. First, the spin Seebeck effect, which is the spin-current generation due to heat current, is discussed. The recent progress in research on the spin Seebeck effect are introduced. We explain the origin of the observed sign changes of the spin Seebeck effect in compensated ferromagnets. Next, the spin Peltier effect, which is the heat-current generation due to spin current, is discussed. Finally, we show that the spin Seebeck and spin Peltier effects are summarized by Onsager's reciprocal relation and derive Kelvin's relation for the spin and heat transports. (author)

  7. Effect of the Grip Angle on Off-Spin Bowling Performance Parameters, Analysed with a Smart Cricket Ball

    Directory of Open Access Journals (Sweden)

    Franz Konstantin Fuss

    2018-02-01

    Full Text Available In the off-spin bowling grip, the ball is clamped between index and middle fingers. Spin bowlers attempt to select a spread angle between these two fingers that achieves comfort and optimises performance. The aim of this paper was to investigate whether the standard grip is superior to narrow and wide grips. The bowling performance parameters were obtained from a smart cricket ball. Smart ball data revealed that the performance parameters varied with grip type. The following parameters were optimum at the standard grip: spin rate, resultant torque, spin torque, peak angular acceleration, and peak power. The following parameters were optimum at standard and wide grips: efficiency. The following parameters were optimum at standard and narrow grips: pitch angle of spin axis. The following parameters were optimum at the wide grip: precession and the precession torque. In general, the data tended to show that the standard grip is most effective for spin bowling. However, more research is needed to confirm this result, because the precession and precession torque were optimum at the wide grip, suggesting that this may have a superior performance over the standard and narrow grips.

  8. Smooth torque speed characteristic of switched reluctance motors

    DEFF Research Database (Denmark)

    Zeng, Hui; Chen, Zhe; Chen, Hao

    2014-01-01

    The torque ripple of switched reluctance motors (SRMs) is the main disadvantage that limits the industrial application of these motors. Although several methods for smooth-toque operation (STO) have been proposed, STO works well only within a certain torque and speed range because...

  9. Improvement of Torque Production in Single-Phase Induction Motors ...

    African Journals Online (AJOL)

    Existing single phase induction motors exhibit low starting torque. Moreover, during accelerating time and at steady state, they produce a significant level of torque pulsations which gives rise to noise and vibration in the machine. As part of efforts to mitigate these problems, a performance improvement strategy using a PWM ...

  10. Direct torque control with feedback linearization for induction motor drives

    DEFF Research Database (Denmark)

    Lascu, Cristian; Jafarzadeh, Saeed; Fadali, Sami M.

    2015-01-01

    This paper describes a Direct Torque Controlled (DTC) Induction Machine (IM) drive that employs feedback linearization and sliding-mode control. A feedback linearization approach is investigated, which yields a decoupled linear IM model with two state variables: torque and stator flux magnitude...

  11. Improvement of Torque Production in Single-Phase Induction Motors

    African Journals Online (AJOL)

    OLUWASOGO

    PID controller. Simulation results show the starting torque of the motor increased by 75% under the developed drive scheme. In addition, torque pulsations reduced from 1.4 Nm peak-peak to 0.14 Nm peak-peak at steady state. It was observed that the accelerating time reduced by 30% compared to the accelerating time ...

  12. Improving the performance of hysteresis direct torque control of ...

    Indian Academy of Sciences (India)

    Many other researchers used filter topologies to improve waveform in PMSM. Sozer et al. (2000) have presented an ... In this study, a new filter topology is proposed to reduce torque ripples and voltage harmonic noises in IPMSM with direct torque .... The IPMSM is star-connected with earth return. The motor parameters are ...

  13. 14 CFR 27.397 - Limit pilot forces and torques.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Limit pilot forces and torques. 27.397... System Loads § 27.397 Limit pilot forces and torques. (a) Except as provided in paragraph (b) of this section, the limit pilot forces are as follows: (1) For foot controls, 130 pounds. (2) For stick controls...

  14. 14 CFR 29.397 - Limit pilot forces and torques.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Limit pilot forces and torques. 29.397... System Loads § 29.397 Limit pilot forces and torques. (a) Except as provided in paragraph (b) of this section, the limit pilot forces are as follows: (1) For foot controls, 130 pounds. (2) For stick controls...

  15. Coorbital thermal torques on low-mass protoplanets

    Science.gov (United States)

    Masset, Frédéric S.

    2017-12-01

    Using linear perturbation theory, we investigate the torque exerted on a low-mass planet embedded in a gaseous protoplanetary disc with finite thermal diffusivity. When the planet does not release energy into the ambient disc, the main effect of thermal diffusion is the softening of the enthalpy peak near the planet, which results in the appearance of two cold and dense lobes on either side of the orbit, of size smaller than the thickness of the disc. The lobes exert torques of opposite sign on the planet, each comparable in magnitude to the one-sided Lindblad torque. When the planet is offset from corotation, the lobes are asymmetric and the planet experiences a net torque, the 'cold' thermal torque, which has a magnitude that depends on the relative value of the distance to corotation to the size of the lobes ˜√{χ /Ω _p}, χ being the thermal diffusivity and Ωp the orbital frequency. We believe that this effect corresponds to the phenomenon named 'cold finger' recently reported in numerical simulations, and we argue that it constitutes the dominant mode of migration of sub-Earth-mass objects. When the planet is luminous, the heat released into the ambient disc results in an additional disturbance that takes the form of hot, low-density lobes. They give a torque, named heating torque in previous work, that has an expression similar, but of opposite sign, to the cold thermal torque.

  16. Alternating bending-steady torque fatigue reliability

    Science.gov (United States)

    Kececioglu, D.; Chester, L. B.; Dodge, T. M.

    1974-01-01

    Results generated by three unique fatigue reliability research machines which can apply alternating-bending loads combined with steady torque are presented. Six-inch long, AISI steel, grooved specimens with a stress concentration factor of 1.42 and Rockwell C 35/40 hardness were subjected to various combinations of these loads and cycled to failure. The generated cycles-to-failure and staircase-testing data are statistically analyzed to develop distributional S-N and Goodman diagrams. Various failure theories are investigated to determine which one best represents the data. The effect of the groove and of the various combined bending-torsion loads on the finite and endurance life strength of such components, as well as on the Goodman diagram, are determined. Design applications are presented.

  17. Nuclear spin pumping and electron spin susceptibilities

    NARCIS (Netherlands)

    Danon, J.; Nazarov, Y.V.

    2011-01-01

    In this work we present a new formalism to evaluate the nuclear spin dynamics driven by hyperfine interaction with nonequilibrium electron spins. To describe the dynamics up to second order in the hyperfine coupling it suffices to evaluate the susceptibility and fluctuations of the electron spin.

  18. Torque compensation technology for the geostationary meteorological satellite

    Science.gov (United States)

    Wang, Zhigang; Wang, Lusha; Chen, Shilu; Li, Qing

    2009-12-01

    To acquire high quality image, the new generation Geostationary Meteorological Satellite in China (GMSC) adopts three-axis stabilized attitude control mode, besides an advanced control system is required to be designed to get higher pointing precision and degree of stability of the satellite. However, the ability of the control system is limited. Torque compensation technology is studied in this paper aiming at rejecting the disturbance factors, which cannot be absorbed by the control system. In the research of torque compensation technology, the main factors that influence the degree of stability of satellite are analyzed; the objects compensated are confirmed through analysis of simulation; the system technical concept of torque compensation is designed; the mathematical models of the compensated objects and compensation devices are founded; the torque compensation arithmetic is designed; the valid arithmetic of torque compensation is proved through simulation. The research provides theoretical principles to develop the new generation GMSC.

  19. Special-Purpose High-Torque Permanent-Magnet Motors

    Science.gov (United States)

    Doane, George B., III

    1995-01-01

    Permanent-magnet brushless motors that must provide high commanded torques and satisfy unusual heat-removal requirement are developed. Intended for use as thrust-vector-control actuators in large rocket engines. Techniques and concepts used to design improved motors for special terrestrial applications. Conceptual motor design calls for use of rotor containing latest high-energy-product rare-earth permanent magnets so that motor produces required torque while drawing smallest possible currents from power supply. Torque generated by electromagnetic interaction between stator and permanent magnets in rotor when associated electronic circuits applied appropriately temporally and spatially phased currents to stator windings. Phase relationships needed to produce commanded torque computed in response to torque command and to electronically sensed angular position of rotor relative to stator.

  20. Active element influence on the motor’s torque

    Directory of Open Access Journals (Sweden)

    Dolgih Antonina

    2017-01-01

    Full Text Available The paper presents the numerical and experimental studies of the influence of the torque motor active element on the motor’s torque. The tape active element is a novel type of a motor’s stator organization, where the conventional winding is replaced by a tape winding. The force (torque dependence over the rotor pole position using COMSOL is given; the tape winding resistance and the turns number are defined. The relative motor’s characteristics are investigated and the maximum torque over the certain poles pair number is obtained. The application of the proposed active element in brushless DC motor is considered. The results show the possibility of the further synthesis of the torque motor.