Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

Science.gov (United States)

Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

2016-11-23

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

High performance current and spin diode of atomic carbon chain between transversely symmetric ribbon electrodes.

Science.gov (United States)

Dong, Yao-Jun; Wang, Xue-Feng; Yang, Shuo-Wang; Wu, Xue-Mei

2014-08-21

We demonstrate that giant current and high spin rectification ratios can be achieved in atomic carbon chain devices connected between two symmetric ferromagnetic zigzag-graphene-nanoribbon electrodes. The spin dependent transport simulation is carried out by density functional theory combined with the non-equilibrium Green's function method. It is found that the transverse symmetries of the electronic wave functions in the nanoribbons and the carbon chain are critical to the spin transport modes. In the parallel magnetization configuration of two electrodes, pure spin current is observed in both linear and nonlinear regions. However, in the antiparallel configuration, the spin-up (down) current is prohibited under the positive (negative) voltage bias, which results in a spin rectification ratio of order 10(4). When edge carbon atoms are substituted with boron atoms to suppress the edge magnetization in one of the electrodes, we obtain a diode with current rectification ratio over 10(6).

Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot

International Nuclear Information System (INIS)

Bouzaïene, L.; Ben Mahrsia, R.; Baira, M.; Sfaxi, L.; Maaref, H.

2013-01-01

We have performed theoretical calculation of the nonlinear optical rectification in a lens shape InAs/GaAs quantum dot (0D). The combined effects of hydrostatic pressure and temperature on the nonlinear optical rectification in lens-shaped InAs QDs are studied under the compact density matrix formalism and the effective mass approximation. From our calculation, it is found that the subband energies and optical rectification susceptibility are quite sensitive to the applied hydrostatic pressure and temperature. The results show that the resonant peak of the optical rectification can be red-shifted or blue-shifted and their intensity also varied by external probes such as hydrostatic pressure and temperature. In addition, the oscillator strength is strongly affected by these parameters. - Highlights: ► Theoretical calculation of the nonlinear optical rectification in a lens shape InAs/GaAs quantum dot was performed. ► Optical rectification susceptibility is quite sensitive to the applied hydrostatic pressure and temperature. ► The oscillator strength is strongly affected by the applied hydrostatic pressure and temperature.

Localized excitation of magnetostatic surface spin waves in yttrium iron garnet by shorted coaxial probe detected via spin pumping and rectification effect

International Nuclear Information System (INIS)

Soh, Wee Tee; Ong, C. K.; Peng, Bin

2015-01-01

We demonstrate the localized excitation and dc electrical detection of magnetostatic surface spin waves (MSSWs) in yttrium iron garnet (YIG) by a shorted coaxial probe. Thin films of NiFe and Pt are patterned at different regions onto a common bulk YIG substrate. A shorted coaxial probe is used to excite spin precession locally near various patterned regions. The dc voltages across the corresponding regions are recorded. For excitation of the Pt regions, the dc voltage spectra are dominated by the spin pumping of MSSWs from YIG, where various modes can be clearly distinguished. For the NiFe region, it is also found that spin pumping from MSSWs generated in YIG dominated the spectra, indicating that the spin pumped currents are dissipated into charge currents via the inverse Spin Hall effect (ISHE) in NiFe. For all regions, dc signals from YIG MSSWs are observed to be much stronger than the ferromagnetic resonance (FMR) uniform mode, likely due to the nature of the microwave excitation. The results indicate the potential of this probe for microwave imaging via dc detection of spin dynamics in continuous and patterned films

Controllable magnetic thermal rectification in a SMM dimmer with the Dzyaloshinskii-Moriya interaction

Science.gov (United States)

Xu, Ai-Hua; Liu, Juan; Luo, Bo

2016-10-01

Using the quantum master equation, we studied the thermally driven magnonic spin current in a single-molecule magnet (SMM) dimer with the Dzyaloshinskii-Moriya interaction (DMI). Due to the asymmetric DMI, one can observe the thermal rectifying effect in the case of the spatial symmetry coupling with the thermal reservoirs. The properties of the thermal rectification can be controlled by tuning the angle and intensity of the magnetic field. Specially, when the DM vector and magnetic field point at the specific angles, the thermal rectifying effect disappears. And this phenomenon does not depend on the intensities of DMI and magnetic field, the temperature bias and the magnetic anisotropies of the SMM.

Effects of contrast improvement on high voltage rectification type of x-ray diagnostic apparatus

Energy Technology Data Exchange (ETDEWEB)

Lee, Hoo Min; Yoon, Joon [Dept. of Radiological technology, Dongnam Health University, Suwon (Korea, Republic of); Kim, Hyun Ju [Dept. of Radiology, Soonchunhyang University Hospital Buchen, Bucheon (Korea, Republic of)

2014-09-15

The purpose of this study was to analyze the effect on the selectivity on of high-voltage rectification device that measured the performance of the grid, and the contrast improvement ability (K factor) by measuring the scattered radiation content of the transmitted X-rays. The scattered radiation generated when the X-ray flux comes from the diagnostic X-ray generator that passes through an object. Targeting four different rectifications of X-ray generators, the mean value of the tube voltage and the tube current was measured in order to maximize the accuracy of the generating power dose within the same exposure condition. Using fluorescence meter, the content of the scattered rays that are transmitted through the acrylic was measured depending on the grid usage. When grid is not used, the content of the scattered rays was the lowest (34.158%) with the single-phase rectifier, was increased with the inverter rectifier (37.043%) and the three-phase 24-peak rectification method (37.447%). The difference of the scattered radiation content of each device was significant from the lowest 0.404% to the highest 3.289% while using 8:1 grid, the content of the scattered ray was the lowest with the single content of the scattered ray was the lowest with the single-phase rectifier (18.258%), was increased with the rectifier (25.502%) and the 24-peaks rectification (24.217%). Furthermore, there was difference up to content 7.244% to the lowest content 1.285% within three-phase 24-peaks rectification, inverter rectifications, and single-phase rectifier depending on the selectivity of the grid. Drawn from the statistical analysis, there was a similar relationship between the contrast improvement factor and the K factor. As a result, the grid selectivity and the contrast were increased within the single-phase rectifier rather than the constant voltage rectifier.

Effects of contrast improvement on high voltage rectification type of x-ray diagnostic apparatus

International Nuclear Information System (INIS)

Lee, Hoo Min; Yoon, Joon; Kim, Hyun Ju

2014-01-01

The purpose of this study was to analyze the effect on the selectivity on of high-voltage rectification device that measured the performance of the grid, and the contrast improvement ability (K factor) by measuring the scattered radiation content of the transmitted X-rays. The scattered radiation generated when the X-ray flux comes from the diagnostic X-ray generator that passes through an object. Targeting four different rectifications of X-ray generators, the mean value of the tube voltage and the tube current was measured in order to maximize the accuracy of the generating power dose within the same exposure condition. Using fluorescence meter, the content of the scattered rays that are transmitted through the acrylic was measured depending on the grid usage. When grid is not used, the content of the scattered rays was the lowest (34.158%) with the single-phase rectifier, was increased with the inverter rectifier (37.043%) and the three-phase 24-peak rectification method (37.447%). The difference of the scattered radiation content of each device was significant from the lowest 0.404% to the highest 3.289% while using 8:1 grid, the content of the scattered ray was the lowest with the single content of the scattered ray was the lowest with the single-phase rectifier (18.258%), was increased with the rectifier (25.502%) and the 24-peaks rectification (24.217%). Furthermore, there was difference up to content 7.244% to the lowest content 1.285% within three-phase 24-peaks rectification, inverter rectifications, and single-phase rectifier depending on the selectivity of the grid. Drawn from the statistical analysis, there was a similar relationship between the contrast improvement factor and the K factor. As a result, the grid selectivity and the contrast were increased within the single-phase rectifier rather than the constant voltage rectifier

Entropy production and rectification efficiency in colloid transport along a pulsating channel

Science.gov (United States)

Florencia Carusela, M.; Rubi, J. Miguel

2018-06-01

We study the current rectification of particles moving in a pulsating channel under the influence of an applied force. We have shown the existence of different rectification scenarios in which entropic and energetic effects compete. The effect can be quantified by means of a rectification coefficient that is analyzed in terms of the force, the frequency and the diffusion coefficient. The energetic cost of the motion of the particles expressed in terms of the entropy production depends on the importance of the entropic contribution to the total force. Rectification is more important at low values of the applied force when entropic effects become dominant. In this regime, the entropy production is not invariant under reversal of the applied force. The phenomenon observed could be used to optimize transport in microfluidic devices or in biological channels.

Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

Science.gov (United States)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-06-01

We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

OpenAIRE

Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

2015-01-01

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

Fractionation and rectification apparatus

Energy Technology Data Exchange (ETDEWEB)

Sauerwald, A

1932-05-25

Fractionation and rectifying apparatus with a distillation vessel and a stirring tube, drainage tubes leading from its coils to a central collecting tube, the drainage tubes being somewhat parallel and attached to the outer half of the stirring tube and partly on the inner half of the central collecting tube, whereby distillation and rectification can be effected in a single apparatus.

Radiative thermal rectification using superconducting materials

Energy Technology Data Exchange (ETDEWEB)

Nefzaoui, Elyes, E-mail: elyes.nefzaoui@univ-poitiers.fr; Joulain, Karl, E-mail: karl.joulain@univ-poitiers.fr; Drevillon, Jérémie; Ezzahri, Younès [Institut Pprime, Université de Poitiers-CNRS-ENSMA, 2, Rue Pierre Brousse, Bâtiment B25, TSA 41105, 86073 Poitiers Cedex 9 (France)

2014-03-10

Thermal rectification can be defined as an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this Letter, we present a far-field radiative thermal rectifier based on high-temperature superconducting materials with a rectification ratio up to 80%. This value is among the highest reported in literature. Two configurations are examined: a superconductor (Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}) exchanging heat with (1) a black body and (2) another superconductor, YBa{sub 2}Cu{sub 3}O{sub 7} in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two-superconductor rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e., the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering, and thermal logical circuits’ development.

Thermal conductivity and rectification in asymmetric archaeal lipid membranes

Science.gov (United States)

Youssefian, Sina; Rahbar, Nima; Van Dessel, Steven

2018-05-01

Nature employs lipids to construct nanostructured membranes that self-assemble in an aqueous environment to separate the cell interior from the exterior environment. Membrane composition changes among species and according to environmental conditions, which allows organisms to occupy a wide variety of different habitats. Lipid bilayers are phase-change materials that exhibit strong thermotropic and lyotropic phase behavior in an aqueous environment, which may also cause thermal rectification. Among different types of lipids, archaeal lipids are of great interest due to their ability to withstand extreme conditions. In this paper, nonequilibrium molecular dynamics simulations were employed to study the nanostructures and thermal properties of different archaeols and to investigate thermal rectification effects in asymmetric archaeal membranes. In particular, we are interested in understanding the role of bridged phytanyl chains and cyclopentane groups in controlling the phase transition temperature and heat flow across the membrane. Our results indicate that the bridged phytanyl chains decrease the molecular packing of lipids, whereas the existence of cyclopentane rings on the tail groups increases the molecular packing by enhancing the interactions between isoprenoid chains. We found that macrocyclic archaeols have the highest thermal conductivity, whereas macrocyclic archaeols with two cyclopentane rings have the lowest. The effect of the temperature on the variation of thermal conductivity was found to be progressive. Our results further indicate that small thermal rectification effects occur in asymmetric archaeol bilayer membranes at around 25 K temperature gradient. The calculated thermal rectification factor was around 0.09 which is in the range of rectification factor obtained experimentally for nanostructures such as carbon nanotubes (0.07). Such phenomena may be of biological significance and could also be optimized for use in various engineering

Energy-Saving in Brew-Rectification

Directory of Open Access Journals (Sweden)

N. I. Ulyanau

2008-01-01

Full Text Available The paper investigates dynamics of rectification process on one plate of a column. The basic channels controlling brew-rectification process are described in the paper.The paper also considers problems pertaining to synthesis of an adaptive system that controls non-stationary objects with delay. Synthesis of adaptive systems that automatically control product quality and saving on power resources and productivity with the help of the second method of Lyapunov has been carried out in the paper.Industrial introduction of the given automatic control system of technological process shall permit to increase productivity of a rectification (10–15 %, to decrease specific power consumption by (5–10 % while preserving the specified quality of rectified ethyl alcohol and decrease alcohol losses with luting water and malt-residue.

Current rectification by mediating electroactive polymers

Energy Technology Data Exchange (ETDEWEB)

Ybarra, Gabriel; Moina, Carlos [Centro de Investigacion sobre Electrodeposicion y Procesos Superficiales, Instituto Nacional de Tecnologia Industrial, CC 157, (1650) San Martin (Argentina); Florit, M. Ines [INIFTA, Facultad de Ciencias Exactas, UNLP, Suc. 4, CC 16, (1900) La Plata (Argentina); Posadas, Dionisio [INIFTA, Facultad de Ciencias Exactas, UNLP, Suc. 4, CC 16, (1900) La Plata (Argentina)], E-mail: dposadas@inifta.unlp.edu.ar

2008-04-20

In this work we briefly review the theoretical basis for the electrochemical rectification in mediated redox reactions at redox polymer modified electrodes. Electrochemical rectification may have two distinct origins. It is either caused by a slow kinetics of the reaction between the external redox couple and the mediator or it is originated by a slow electronic transport within the film under an unfavorable thermodynamic condition. We show experimental results for the redox mediation reaction of poly(o-aminophenol) (POAP) on the Fe{sup 2+/3+} and on the Fe(CN){sub 6}{sup 3-/4-} redox couples in solution that prove the proposed mechanisms of electrochemical rectification.

Current rectification by mediating electroactive polymers

International Nuclear Information System (INIS)

Ybarra, Gabriel; Moina, Carlos; Florit, M. Ines; Posadas, Dionisio

2008-01-01

In this work we briefly review the theoretical basis for the electrochemical rectification in mediated redox reactions at redox polymer modified electrodes. Electrochemical rectification may have two distinct origins. It is either caused by a slow kinetics of the reaction between the external redox couple and the mediator or it is originated by a slow electronic transport within the film under an unfavorable thermodynamic condition. We show experimental results for the redox mediation reaction of poly(o-aminophenol) (POAP) on the Fe 2+/3+ and on the Fe(CN) 6 3-/4- redox couples in solution that prove the proposed mechanisms of electrochemical rectification

Thermal rectification based on phonon hydrodynamics and thermomass theory

Directory of Open Access Journals (Sweden)

Dong Yuan

2016-06-01

Full Text Available The thermal diode is the fundamental device for phononics. There are various mechanisms for thermal rectification, e.g. different temperature dependent thermal conductivity of two ends, asymmetric interfacial resistance, and nonlocal behavior of phonon transport in asymmetric structures. The phonon hydrodynamics and thermomass theory treat the heat conduction in a fluidic viewpoint. The phonon gas flowing through the media is characterized by the balance equation of momentum, like the Navier-Stokes equation for fluid mechanics. Generalized heat conduction law thereby contains the spatial acceleration (convection term and the viscous (Laplacian term. The viscous term predicts the size dependent thermal conductivity. Rectification appears due to the MFP supersession of phonons. The convection term also predicts rectification because of the inertia effect, like a gas passing through a nozzle or diffuser.

Measurement and understanding of single-molecule break junction rectification caused by asymmetric contacts

International Nuclear Information System (INIS)

Wang, Kun; Zhou, Jianfeng; Hamill, Joseph M.; Xu, Bingqian

2014-01-01

The contact effects of single-molecule break junctions on rectification behaviors were experimentally explored by a systematic control of anchoring groups of 1,4-disubstituted benzene molecular junctions. Single-molecule conductance and I-V characteristic measurements reveal a strong correlation between rectifying effects and the asymmetry in contacts. Analysis using energy band models and I-V calculations suggested that the rectification behavior is mainly caused by asymmetric coupling strengths at the two contact interfaces. Fitting of the rectification ratio by a modified Simmons model we developed suggests asymmetry in potential drop across the asymmetric anchoring groups as the mechanism of rectifying I-V behavior. This study provides direct experimental evidence and sheds light on the mechanisms of rectification behavior induced simply by contact asymmetry, which serves as an aid to interpret future single-molecule electronic behavior involved with asymmetric contact conformation

Thermal rectification in nonlinear quantum circuits

DEFF Research Database (Denmark)

Ruokola, T.; Ojanen, T.; Jauho, Antti-Pekka

2009-01-01

We present a theoretical study of radiative heat transport in nonlinear solid-state quantum circuits. We give a detailed account of heat rectification effects, i.e., the asymmetry of heat current with respect to a reversal of the thermal gradient, in a system consisting of two reservoirs at finit...

Precision Rectification of Airborne SAR Image

DEFF Research Database (Denmark)

Dall, Jørgen; Liao, M.; Zhang, Zhe

1997-01-01

A simple and direct procedure for the rectification of a certain class of airborne SAR data is presented. The relief displacements of SAR data are effectively removed by means of a digital elevation model and the image is transformed to the ground coordinate system. SAR data from the Danish EMISAR...

Thermal transport through a spin-phonon interacting junction: A nonequilibrium Green's function method study

Science.gov (United States)

Zhang, Zu-Quan; Lü, Jing-Tao

2017-09-01

Using the nonequilibrium Green's function method, we consider heat transport in an insulating ferromagnetic spin chain model with spin-phonon interaction under an external magnetic field. Employing the Holstein-Primakoff transformation to the spin system, we treat the resulted magnon-phonon interaction within the self-consistent Born approximation. We find the magnon-phonon coupling can change qualitatively the magnon thermal conductance in the high-temperature regime. At a spectral mismatched ferromagnetic-normal insulator interface, we also find thermal rectification and negative differential thermal conductance due to the magnon-phonon interaction. We show that these effects can be effectively tuned by the external applied magnetic field, a convenient advantage absent in anharmonic phonon and electron-phonon systems studied before.

Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

International Nuclear Information System (INIS)

Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

2011-01-01

In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.

Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: Induced by edge oxidation and symmetry concept

Science.gov (United States)

Nazirfakhr, Maryam; Shahhoseini, Ali

2018-03-01

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of H-terminated zigzag graphene nanoribbon (H/ZGNR) and O-terminated ZGNR/H-terminated ZGNR (O/ZGNR-H/ZGNR) heterostructure under finite bias. Moreover, the effect of width and symmetry on the electronic transport properties of both models is also considered. The results reveal that asymmetric H/ZGNRs have linear I-V characteristics in whole bias range, but symmetric H-ZGNRs show negative differential resistance (NDR) behavior which is inversely proportional to the width of the H/ZGNR. It is also shown that the I-V characteristic of O/ZGNR-H/ZGNR heterostructure shows a rectification effect, whether the geometrical structure is symmetric or asymmetric. The fewer the number of zigzag chains, the bigger the rectification ratio. It should be mentioned that, the rectification ratios of symmetric heterostructures are much bigger than asymmetric one. Transmission spectrum, density of states (DOS), molecular projected self-consistent Hamiltonian (MPSH) and molecular eigenstates are analyzed subsequently to understand the electronic transport properties of these ZGNR devices. Our findings could be used in developing nanoscale rectifiers and NDR devices.

Research on geometric rectification of the Large FOV Linear Array Whiskbroom Image

Science.gov (United States)

Liu, Dia; Liu, Hui-tong; Dong, Hao; Liu, Xiao-bo

2015-08-01

To solve the geometric distortion problem of large FOV linear array whiskbroom image, a model of multi center central projection collinearity equation was founded considering its whiskbroom and linear CCD imaging feature, and the principle of distortion was analyzed. Based on the rectification method with POS, we introduced the angular position sensor data of the servo system, and restored the geometric imaging process exactly. An indirect rectification scheme aiming at linear array imaging with best scanline searching method was adopted, matrixes for calculating the exterior orientation elements was redesigned. We improved two iterative algorithms for this device, and did comparison and analysis. The rectification for the images of airborne imaging experiment showed ideal effect.

Desactivation of tritium waters by rectification methods

International Nuclear Information System (INIS)

Egorov, A.I.; Tyunis, V.M.

2002-01-01

Results of experiments into the basic rectification processes dedicated to tritium separation from reactor, technological and waste waters are presented. Coefficients of separation for rectification of water (1.028), ammonia (1.05), azeotrope H 2 O - HTO - HNO 3 (1.098) and D 2 O - DTO - DNO 3 (1.039) are performed. Operating schemes of tritium separating units are reviewed [ru

Goal-oriented rectification of camera-based document images.

Science.gov (United States)

Stamatopoulos, Nikolaos; Gatos, Basilis; Pratikakis, Ioannis; Perantonis, Stavros J

2011-04-01

Document digitization with either flatbed scanners or camera-based systems results in document images which often suffer from warping and perspective distortions that deteriorate the performance of current OCR approaches. In this paper, we present a goal-oriented rectification methodology to compensate for undesirable document image distortions aiming to improve the OCR result. Our approach relies upon a coarse-to-fine strategy. First, a coarse rectification is accomplished with the aid of a computationally low cost transformation which addresses the projection of a curved surface to a 2-D rectangular area. The projection of the curved surface on the plane is guided only by the textual content's appearance in the document image while incorporating a transformation which does not depend on specific model primitives or camera setup parameters. Second, pose normalization is applied on the word level aiming to restore all the local distortions of the document image. Experimental results on various document images with a variety of distortions demonstrate the robustness and effectiveness of the proposed rectification methodology using a consistent evaluation methodology that encounters OCR accuracy and a newly introduced measure using a semi-automatic procedure.

High rectification ratios of Fe-porphyrin molecules on Au facets

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaoyu; Wang, Gwo-Ching [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, NY 12180 (United States); Lewis, Kim M., E-mail: lewisk2@rpi.edu [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, NY 12180 (United States)

2012-09-14

We report room temperature measurements of current vs. voltage (I-V) from self-assembled Fe porphyrin [Fe(III) 5,15-di[4-(s-acetylthio)phenyl]-10,20-diphenyl porphine] molecular layers formed on annealed gold crystal facets on glass substrates. I-V curves were measured using an atomic force microscope with a conductive platinum tip. We observed a rectifier effect that shows asymmetric I-V curves from a monolayer of molecules. The majority rectification ratios at {+-}1 V obtained from hundreds of I-V lie in between 20 and 200, with the highest up to 9000. This is in contrast to the symmetric I-V curves measured from a few nm thick multilayer molecular islands. We contribute the observed rectification in ultrathin FeP molecular layers from asymmetric Schottky barriers that result from molecules in different bonding strengths to electrodes of gold and platinum. -- Highlights: Black-Right-Pointing-Pointer FeP molecular layers or islands of different thickness were self-assembled on Au. Black-Right-Pointing-Pointer High rectification ratios up to 9000 observed in sub-nm thick FeP molecular layers. Black-Right-Pointing-Pointer Measured current vs. voltage using a conductive AFM tip as one electrode. Black-Right-Pointing-Pointer Observed rectification of symmetric molecules using two different electrodes.

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Energy Technology Data Exchange (ETDEWEB)

Skinner, T. D., E-mail: tds32@cam.ac.uk; Irvine, A. C.; Heiss, D.; Kurebayashi, H.; Ferguson, A. J., E-mail: ajf1006@cam.ac.uk [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Wang, M.; Hindmarch, A. T.; Rushforth, A. W. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

2014-02-10

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven ferromagnetic resonance technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, was analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the sum of the field-like torque and Oersted torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

Spin-dependent transport and functional design in organic ferromagnetic devices

Directory of Open Access Journals (Sweden)

Guichao Hu

2017-09-01

Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Testing accelerometer rectification error caused by multidimensional composite inputs with double turntable centrifuge.

Science.gov (United States)

Guan, W; Meng, X F; Dong, X M

2014-12-01

Rectification error is a critical characteristic of inertial accelerometers. Accelerometers working in operational situations are stimulated by composite inputs, including constant acceleration and vibration, from multiple directions. However, traditional methods for evaluating rectification error only use one-dimensional vibration. In this paper, a double turntable centrifuge (DTC) was utilized to produce the constant acceleration and vibration simultaneously and we tested the rectification error due to the composite accelerations. At first, we deduced the expression of the rectification error with the output of the DTC and a static model of the single-axis pendulous accelerometer under test. Theoretical investigation and analysis were carried out in accordance with the rectification error model. Then a detailed experimental procedure and testing results were described. We measured the rectification error with various constant accelerations at different frequencies and amplitudes of the vibration. The experimental results showed the distinguished characteristics of the rectification error caused by the composite accelerations. The linear relation between the constant acceleration and the rectification error was proved. The experimental procedure and results presented in this context can be referenced for the investigation of the characteristics of accelerometer with multiple inputs.

Very large thermal rectification in bulk composites consisting partly of icosahedral quasicrystals

International Nuclear Information System (INIS)

Takeuchi, Tsunehiro

2014-01-01

The bulk thermal rectifiers usable at a high temperature above 300 K were developed by making full use of the unusual electron thermal conductivity of icosahedral quasicrystals. The unusual electron thermal conductivity was caused by a synergy effect of quasiperiodicity and by a narrow pseudogap at the Fermi level. The rectification ratio, defined by TRR = |J large |/|J small |, reached vary large values exceeding 2.0. This significant thermal rectification would lead to new practical applications for the heat management. (paper)

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Spin Hall effects

Science.gov (United States)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Thermal conductivity and thermal rectification in graphene nanoribbons: a molecular dynamics study.

Science.gov (United States)

Hu, Jiuning; Ruan, Xiulin; Chen, Yong P

2009-07-01

We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to approximately 4 nm wide and approximately 10 nm long). For symmetric nanoribbons, the calculated thermal conductivity (e.g., approximately 2000 W/m-K at 400 K for a 1.5 nm x 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30 degrees gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.

Spin-dependent rectification in the C59N molecule

Indian Academy of Sciences (India)

2013-02-05

Feb 5, 2013 ... where E is the injected electron energy and ξ is a very small number ... et al [40] considered a four-site system to study transport through a ... iM ,σ (ciM ,σ ) creates (destroys) an electron with spin σ at site i of C60 and εiM is the.

Rectification of graphene self-switching diodes: First-principles study

Science.gov (United States)

Ghaziasadi, Hassan; Jamasb, Shahriar; Nayebi, Payman; Fouladian, Majid

2018-05-01

The first principles calculations based on self-consistent charge density functional tight-binding have performed to investigate the electrical properties and rectification behavior of the graphene self-switching diodes (GSSD). The devices contained two structures called CG-GSSD and DG-GSSD which have metallic or semiconductor gates depending on their side gates have a single or double hydrogen edge functionalized. We have relaxed the devices and calculated I-V curves, transmission spectrums and maximum rectification ratios. We found that the DG-MSM devices are more favorable and more stable. Also, the DG-MSM devices have better maximum rectification ratios and current. Moreover, by changing the side gates widths and behaviors from semiconductor to metal, the threshold voltages under forward bias changed from +1.2 V to +0.3 V. Also, the maximum currents are obtained from 1.12 μA to 10.50 μA. Finally, the MSM and SSS type of all devices have minimum and maximum values of voltage threshold and maximum rectification ratios, but the 769-DG devices don't obey this rule.

Spin transfer driven resonant expulsion of a magnetic vortex core for efficient rf detector

Directory of Open Access Journals (Sweden)

S. Menshawy

2017-05-01

Full Text Available Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency (rf detection using the spin diode rectification effect in spin torque nano-oscillators (STNOs. In this study, we focus on a new phenomenon, the resonant expulsion of a magnetic vortex in STNOs. This effect is observed when the excitation vortex radius, due to spin torques associated to rf currents, becomes larger than the actual radius of the STNO. This vortex expulsion is leading to a sharp variation of the voltage at the resonant frequency. Here we show that the detected frequency can be tuned by different parameters; furthermore, a simultaneous detection of different rf signals can be achieved by real time measurements with several STNOs having different diameters. This result constitutes a first proof-of-principle towards the development of a new kind of nanoscale rf threshold detector.

Effect of spin rotation coupling on spin transport

International Nuclear Information System (INIS)

Chowdhury, Debashree; Basu, B.

2013-01-01

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

Effect of spin rotation coupling on spin transport

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-12-15

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

Optical rectification, circular photogalvanic effect, and five-wave mixing in optically active liquids

Science.gov (United States)

Koroteev, Nikolai I.

1996-05-01

A phenomenological analysis is carried out of novel nonlinear optical processes taking place in macroscopically noncentrosymmetric isotropic solutions of chiral (lift-ring mirror asymmetric) macromolecules, which are the primary elements of living organisms and their metabolic products. Among the most interesting and potentially useful for spectroscopic purposes are: optical rectification/photogalvanic effects consisting in electrostatic field/direct electrical current generation in such liquids under irradiation with the intense circularly polarized laser beam and the five-wave mixing phase-matched process of BioCARS to selectively record, background-free, vibrational spectra of chiral molecules.

Local rectification of heat flux

Science.gov (United States)

Pons, M.; Cui, Y. Y.; Ruschhaupt, A.; Simón, M. A.; Muga, J. G.

2017-09-01

We present a chain-of-atoms model where heat is rectified, with different fluxes from the hot to the cold baths located at the chain boundaries when the temperature bias is reversed. The chain is homogeneous except for boundary effects and a local modification of the interactions at one site, the “impurity”. The rectification mechanism is due here to the localized impurity, the only asymmetrical element of the structure, apart from the externally imposed temperature bias, and does not rely on putting in contact different materials or other known mechanisms such as grading or long-range interactions. The effect survives if all interaction forces are linear except the ones for the impurity.

Conjunction of standing wave and resonance in asymmetric nanowires: a mechanism for thermal rectification and remote energy accumulation.

Science.gov (United States)

Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

2015-12-02

As an important way to control and manage heat transport, thermal rectification has become an elementary issue in the field of phononics and plays a key role in the designing of thermal devices. Here we investigate systematically the standing wave and the accompanying resonance process in asymmetric nanowires to understand the standing wave itself and its great effect on thermal rectification. Results show that the standing wave is sensitive to both the structural and thermal properties of the material, and its great effect on enhancing the thermal rectification is realized not only by the energy-localization nature of the standing wave, but also by the resonance-caused large amplitude and high energy of the standing wave.

Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell.

Science.gov (United States)

Su, Yantao; Xin, Chao; Feng, Yancong; Lin, Qinxian; Wang, Xinwei; Liang, Jun; Zheng, Jiaxin; Lin, Yuan; Pan, Feng

2016-10-11

The present work intends to explain why ultrathin Al 2 O 3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al 2 O 3 /Cu x Te by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al 2 O 3 ) as the key factor for rectification and tunneling effects.

Giant rectification in graphene nanoflake molecular devices with asymmetric graphene nanoribbon electrodes

International Nuclear Information System (INIS)

Ji, Xiao-Li; Xie, Zhen; Zuo, Xi; Zhang, Guang-Ping; Li, Zong-Liang; Wang, Chuan-Kui

2016-01-01

By applying density functional theory based nonequilibrium Green's function method, we theoretically investigate the electron transport properties of a zigzag-edged trigonal graphene nanoflake (ZTGNF) sandwiched between two asymmetric zigzag graphene nanoribbon (zGNR) and armchair graphene nanoribbon (aGNR) electrodes with carbon atomic chains (CACs) as the anchoring groups. Significant rectifying effects have been observed for these molecular devices in low bias voltage regions. Interestingly, the rectifying performance of molecular devices can be optimized by changing the width of the aGNR electrode and the number of anchoring CACs. Especially, the molecular device displays giant rectification ratios up to the order of 10"4 when two CACs are used as the anchoring group between the ZTGNF and the right aGNR electrode. Further analysis indicates that the asymmetric shift of the perturbed molecular energy levels and the spatial parity of the electron wavefunctions in the electrodes around the Fermi level play key roles in determining the rectification performance. And the spatial distributions of tunneling electron wavefunctions under negative bias voltages can be modified to be very localized by changing the number of anchoring CACs, which is found to be the origin of the giant rectification ratios. - Highlights: • The rectification properties of triangular Graphene nanoflakes are investigated. • The rectifying performance can be optimized by changing the width of the right arm-chaired GNR electrode. • The rectifying performance can also be tuned by varying the number of anchoring carbon atomic chains.

Rectification of pulsatile stress on soft tissues: a mechanism for normal-pressure hydrocephalus

Science.gov (United States)

Jalikop, Shreyas; Hilgenfeldt, Sascha

2011-11-01

Hydrocephalus is a pathological condition of the brain that occurs when cerebrospinal fluid (CSF) accumulates excessively in the brain cavities, resulting in compression of the brain parenchyma. Counter-intuitively, normal-pressure hydrocephalus (NPH) does not show elevated pressure differences across the compressed parenchyma. We investigate the effects of nonlinear tissue mechanics and periodic driving in this system. The latter is due to the cardiac cycle, which provides significant intracranial pressure and volume flow rate fluctuations. Nonlinear rectification of the periodic driving within a model of fluid flow in poroelastic material can lead to compression or expansion of the parenchyma, and this effect does not rely on changes in the mean intracranial pressure. The rectification effects can occur gradually over several days, in agreement with clinical studies of NPH.

Rectification of aerial images using piecewise linear transformation

International Nuclear Information System (INIS)

Liew, L H; Lee, B Y; Wang, Y C; Cheah, W S

2014-01-01

Aerial images are widely used in various activities by providing visual records. This type of remotely sensed image is helpful in generating digital maps, managing ecology, monitoring crop growth and region surveying. Such images could provide insight into areas of interest that have lower altitude, particularly in regions where optical satellite imaging is prevented due to cloudiness. Aerial images captured using a non-metric cameras contain real details of the images as well as unexpected distortions. Distortions would affect the actual length, direction and shape of objects in the images. There are many sources that could cause distortions such as lens, earth curvature, topographic relief and the attitude of the aircraft that is used to carry the camera. These distortions occur differently, collectively and irregularly in the entire image. Image rectification is an essential image pre-processing step to eliminate or at least reduce the effect of distortions. In this paper, a non-parametric approach with piecewise linear transformation is investigated in rectifying distorted aerial images. The non-parametric approach requires a set of corresponding control points obtained from a reference image and a distorted image. The corresponding control points are then applied with piecewise linear transformation as geometric transformation. Piecewise linear transformation divides the image into regions by triangulation. Different linear transformations are employed separately to triangular regions instead of using a single transformation as the rectification model for the entire image. The result of rectification is evaluated using total root mean square error (RMSE). Experiments show that piecewise linear transformation could assist in improving the limitation of using global transformation to rectify images

Compound nucleus effects in spin-spin cross sections

International Nuclear Information System (INIS)

Thompson, W.J.

1976-01-01

By comparison with recent data, it is shown that spin-spin cross sections for low-energy neutrons may be dominated by a simple compound-elastic level-density effect, independent of spin-spin terms in the nucleon-nucleus optical-model potential. (Auth.)

The role of geometry in nanoscale rectennas for rectification and energy conversion

Science.gov (United States)

Miskovsky, N. M.; Cutler, P. H.; Mayer, A.; Willis, B. G.; Zimmerman, D. T.; Weisel, G. J.; Chen, James M.; Sullivan, T. E.; Lerner, P. B.

2013-09-01

We have previously presented a method for optical rectification that has been demonstrated both theoretically and experimentally and can be used for the development of a practical rectification and energy conversion device for the electromagnetic spectrum including the visible portion. This technique for optical frequency rectification is based, not on conventional material or temperature asymmetry as used in MIM or Schottky diodes, but on a purely geometric property of the antenna tip or other sharp edges that may be incorporated on patch antennas. This "tip" or edge in conjunction with a collector anode providing connection to the external circuit constitutes a tunnel junction. Because such devices act as both the absorber of the incident radiation and the rectifier, they are referred to as "rectennas." Using current nanofabrication techniques and the selective Atomic Layer Deposition (ALD) process, junctions of 1 nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum (see Section 2).

Magnetocaloric effect in quantum spin-s chains

Directory of Open Access Journals (Sweden)

A. Honecker

2009-01-01

Full Text Available We compute the entropy of antiferromagnetic quantum spin-s chains in an external magnetic field using exact diagonalization and Quantum Monte Carlo simulations. The magnetocaloric effect, i. e., temperature variations during adiabatic field changes, can be derived from the isentropes. First, we focus on the example of the spin-s=1 chain and show that one can cool by closing the Haldane gap with a magnetic field. We then move to quantum spin-s chains and demonstrate linear scaling with s close to the saturation field. In passing, we propose a new method to compute many low-lying excited states using the Lanczos recursion.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Science.gov (United States)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

Energy Technology Data Exchange (ETDEWEB)

Liang, Qi, E-mail: alfred_02030210@163.com; Wei, Yuan

2014-03-15

Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model.

Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

International Nuclear Information System (INIS)

Liang, Qi; Wei, Yuan

2014-01-01

Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model

Observation of the spin Nernst effect

Science.gov (United States)

Meyer, S.; Chen, Y.-T.; Wimmer, S.; Althammer, M.; Wimmer, T.; Schlitz, R.; Geprägs, S.; Huebl, H.; Ködderitzsch, D.; Ebert, H.; Bauer, G. E. W.; Gross, R.; Goennenwein, S. T. B.

2017-10-01

The observation of the spin Hall effect triggered intense research on pure spin current transport. With the spin Hall effect, the spin Seebeck effect and the spin Peltier effect already observed, our picture of pure spin current transport is almost complete. The only missing piece is the spin Nernst (-Ettingshausen) effect, which so far has been discussed only on theoretical grounds. Here, we report the observation of the spin Nernst effect. By applying a longitudinal temperature gradient, we generate a pure transverse spin current in a Pt thin film. For readout, we exploit the magnetization-orientation-dependent spin transfer to an adjacent yttrium iron garnet layer, converting the spin Nernst current in Pt into a controlled change of the longitudinal and transverse thermopower voltage. Our experiments show that the spin Nernst and the spin Hall effect in Pt are of comparable magnitude, but differ in sign, as corroborated by first-principles calculations.

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Pearson, John E.; Hoffmann, Axel [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Vlaminck, Vincent [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Colegio de Ciencias e Ingenería, Universidad San Fransciso de Quito, Quito (Ecuador); Divan, Ralu [Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States); Bader, Samuel D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-09

The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

ac spin-Hall effect

International Nuclear Information System (INIS)

Entin-Wohlman, O.

2005-01-01

Full Text:The spin-Hall effect is described. The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(ω) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to ω 2 . At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to ω. The interference also yields persistent spin currents at thermal equilibrium, at E = 0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other

Geometrical control of ionic current rectification in a configurable nanofluidic diode.

Science.gov (United States)

Alibakhshi, Mohammad Amin; Liu, Binqi; Xu, Zhiping; Duan, Chuanhua

2016-09-01

Control of ionic current in a nanofluidic system and development of the elements analogous to electrical circuits have been the subject of theoretical and experimental investigations over the past decade. Here, we theoretically and experimentally explore a new technique for rectification of ionic current using asymmetric 2D nanochannels. These nanochannels have a rectangular cross section and a stepped structure consisting of a shallow and a deep side. Control of height and length of each side enables us to obtain optimum rectification at each ionic strength. A 1D model based on the Poisson-Nernst-Planck equation is derived and validated against the full 2D numerical solution, and a nondimensional concentration is presented as a function of nanochannel dimensions, surface charge, and the electrolyte concentration that summarizes the rectification behavior of such geometries. The rectification factor reaches a maximum at certain electrolyte concentration predicted by this nondimensional number and decays away from it. This method of fabrication and control of a nanofluidic diode does not require modification of the surface charge and facilitates the integration with lab-on-a-chip fluidic circuits. Experimental results obtained from the stepped nanochannels are in good agreement with the 1D theoretical model.

Radiation reaction for spinning bodies in effective field theory. I. Spin-orbit effects

Science.gov (United States)

Maia, Natália T.; Galley, Chad R.; Leibovich, Adam K.; Porto, Rafael A.

2017-10-01

We compute the leading post-Newtonian (PN) contributions at linear order in the spin to the radiation-reaction acceleration and spin evolution for binary systems, which enter at fourth PN order. The calculation is carried out, from first principles, using the effective field theory framework for spinning compact objects, in both the Newton-Wigner and covariant spin supplementary conditions. A nontrivial consistency check is performed on our results by showing that the energy loss induced by the resulting radiation-reaction force is equivalent to the total emitted power in the far zone, up to so-called "Schott terms." We also find that, at this order, the radiation reaction has no net effect on the evolution of the spins. The spin-spin contributions to radiation reaction are reported in a companion paper.

Current rectification in a single molecule diode: the role of electrode coupling.

Science.gov (United States)

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-24

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Digital image transformation and rectification of spacecraft and radar images

Science.gov (United States)

Wu, S. S. C.

1985-01-01

The application of digital processing techniques to spacecraft television pictures and radar images is discussed. The use of digital rectification to produce contour maps from spacecraft pictures is described; images with azimuth and elevation angles are converted into point-perspective frame pictures. The digital correction of the slant angle of radar images to ground scale is examined. The development of orthophoto and stereoscopic shaded relief maps from digital terrain and digital image data is analyzed. Digital image transformations and rectifications are utilized on Viking Orbiter and Lander pictures of Mars.

Rectification cleaning AsCl3 from the admixture of oxygen

Directory of Open Access Journals (Sweden)

Maznitska O. V.

2008-06-01

Full Text Available The process of the rectification cleaning of three-chlorous arsenic from the admixtures of products of his hydrolysis in the atmosphere of chlorous hydrogen has been considered in the article. Dependence of coefficient of relative volatility a three-chlorous arsenic from his concentration in muriatic solution is explored. The conduct of coefficient of relative volatility with concentrations of HCl and AsCl3 is compared. Saving of equalization of balance and equalization of working curve of column at such conduct of process of rectification is shown.

Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions.

Science.gov (United States)

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus L; Qiu, Xinkai; Hof, Patrick Van't; Hummelen, Jan C; Chiechi, Ryan C

2017-03-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C 60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga-In (EGaIn) and Au conducting probe AFM (CP-AFM) top-contacts. The degree of rectification increases with increasing exposure of the decanethiolate monolayers to the fullerene moieties, going through a maximum after 24 h. We ascribe this observation to the resulting mixed-monolayer achieving an optimal packing density of fullerene cages sitting above the alkane monolayer. Thus, the degree of rectification is controlled by the amount of fullerene present in the mixed-monolayer. The voltage dependence of R varies with the composition of the top-contact and the force applied to the junction and the energy of the lowest unoccupied π-state determined from photoelectron spectroscopy is consistent with the direction of rectification. The maximum value of rectification R = | J (+)/ J (-)| = 940 at ±1 V or 617 at ±0.95 V is in agreement with previous studies on pure monolayers relating the degree of rectification to the volume of the head-group on which the frontier orbitals are localized.

Spin Hall effect by surface roughness

KAUST Repository

Zhou, Lingjun

2015-01-08

The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects

Energy Technology Data Exchange (ETDEWEB)

Choubani, M., E-mail: mohsenchoubani3@yahoo.fr; Ben Mahrsia, R.; Bouzaiene, L.; Maaref, H.

2013-12-15

In this paper we explore the effects of the structural dimensions, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs). The analytical expression of the NOR is analyzed by using the density matrix formalism, the effective mass and the Finite Difference Method (FDM). Obtained results show that the NOR obtained with this coupled system is not a monotonic function of the barrier width, electromagnetic fields, pressure and temperature. Also, calculated results reveal that the resonant peaks of the NOR can be blue-shifted or red-shifted energies depending on the energy of the lowest confined states in the VCQDs structure. In addition, this condition can be controlled by changes in the structural dimensions and the external proofs mentioned above. -- Highlights: • In this paper we explore the effects of the barrier width, applied electromagnetic fields, hydrostatic pressure and temperature on the nonlinear optical rectification (NOR) in Vertically Coupled InAs/GaAs Quantum Dots (VCQDs). • The calculated results reveal that the resonant peaks of the NOR can be blue-shifted to large photon energies or red-shifted to lower photon energies. • In this paper, all parameters: electromagnetic fields, pressure and temperature effects are introduced and investigated. • The resonant energy and the magnitude of the NOR are controlled and adjusted.

Extrinsic spin Hall effect in graphene

Science.gov (United States)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Vibrational spectra and thermal rectification in three-dimensional anharmonic lattices

International Nuclear Information System (INIS)

Lan Jinghua; Li Baowen

2007-01-01

We study thermal rectification in a three-dimensional model consisting of two segments of anharmonic lattices. One segment consists of layers of harmonic oscillator arrays coupled to a substrate potential, which is a three-dimensional Frenkel-Kontorova model, and the other segment is a three-dimensional Fermi-Pasta-Ulam model. We study the vibrational bands of the two lattices analytically and numerically, and find that, by choosing the system parameters properly, the rectification can be as high as a few thousands, which is high enough to be observed in experiment. Possible experiments in nanostructures are discussed

Inverse spin Hall effect by spin injection

Science.gov (United States)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Rectification of light refraction in curved waveguide arrays.

Science.gov (United States)

Longhi, Stefano

2009-02-15

An "optical ratchet" for discretized light in photonic lattices, which enables observing rectification of light refraction at any input beam conditions, is theoretically presented, and a possible experimental implementation based on periodically curved zigzag waveguide arrays is proposed.

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

Transverse spin effects

International Nuclear Information System (INIS)

Ratcliffe, P.G.

1993-01-01

A discussion is presented of the role that transverse spin physics can play in providing information on the bound state dynamics in hadronic physics. Care is taken to distinguish between single- and double-spin measurements, each being discussed separately. In the case of single-spin effects it is stressed that as yet no satisfactory explanation has been provided within the framework if perturbative QCD which in fact generally predicts negligible effects. In order to clarify the situation experimental data at yet higher p T are necessary and semi-leptonic data could shed some light on the underlying scattering mechanisms. As regards double-spin correlations, the theoretical picture (although clouded by some ill-informed, often erroneous statements and even recent papers) is rather well understood and what is dearly missing is the experimental study of, for example, g 2 in deep-inelastic scattering. (author). 31 refs

Rectification of light refraction in curved waveguide arrays

OpenAIRE

Longhi, S.

2010-01-01

An 'optical ratchet' for discretized light in photonic lattices, which enables to observe rectification of light refraction at any input beam conditions, is theoretically presented, and a possible experimental implementation based on periodically-curved zigzag waveguide arrays is proposed.

Separation processes, I: Azeotropic rectification

Directory of Open Access Journals (Sweden)

Milojević Svetomir

2005-01-01

Full Text Available In a series of two articles, the problems of azeotrope separation (part I and the design of separation units (part II were analyzed. The basic definition and equations of vapour-liquid equilibria for ideal and non-ideal systems, the importance of the activity coefficient calculation necessary for the analysis of non-ideal equilibrium systems, as well as theoretical aspects of azeotrope rectification and the determination of the optimal third component (modifier or azeotrope agent are presented in the first part.

Spin Hall effect and Berry phase of spinning particles

International Nuclear Information System (INIS)

Berard, Alain; Mohrbach, Herve

2006-01-01

We consider the adiabatic evolution of the Dirac equation in order to compute its Berry curvature in momentum space. It is found that the position operator acquires an anomalous contribution due to the non-Abelian Berry gauge connection making the quantum mechanical algebra noncommutative. A generalization to any known spinning particles is possible by using the Bargmann-Wigner equation of motions. The noncommutativity of the coordinates is responsible for the topological spin transport of spinning particles similarly to the spin Hall effect in spintronic physics or the Magnus effect in optics. As an application we predict new dynamics for nonrelativistic particles in an electric field and for photons in a gravitational field

Nonlinear optical rectification in a vertically coupled lens-shaped InAs/GaAs quantum dots with wetting layers under hydrostatic pressure and temperature

Energy Technology Data Exchange (ETDEWEB)

Ben Mahrsia, R.; Choubani, M., E-mail: mohsenchoubani3@yahoo.fr; Bouzaiene, L.; Maaref, H.

2016-06-25

In this paper we explore the structure parameters, hydrostatic pressure and temperature effects on Nonlinear optical rectification (NOR) in an asymmetric vertically coupled lens-shaped InAs/GaAs quantum dots. During epitaxial growth, lens-shaped quantum dots (QDs) are formed on the wetting layer (WL). Many theoretical works have neglected WL and its effect on nonlinear optical properties of QD-based systems for sake of simplicity. However, in this work the WL has been shown to be so influential in the intersubband energy and nonlinear optical rectification magnitude. Also, a detailed and comprehensive study of the nonlinear optical rectification is theoretical investigated within the framework of the compact density-matrix approach and finite difference method (FDM). It's found that nonlinear optical rectification coefficient is strongly affected not only by the WL, but also by the pressure, temperature and the coupled width between the QDs. Obtained results revealed that a red or a blue shift cane be observed. This behavior in the NOR gives a new degree of freedom in regions of interest for device applications. - Highlights: • Vertically coupled lens-shaped InAs/GaAs quantum dots is investigated. • Photon energy shifts towards the red with increasing pressure. • Photon energy shifts towards the blue with increasing temperature. • Intersubband energy decreases with increasing the wetting layer width. • Nonlinear optical rectification magnitude is controlled and adjusted.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Thermal rectification and negative differential thermal conductance in harmonic chains with nonlinear system-bath coupling

Science.gov (United States)

Ming, Yi; Li, Hui-Min; Ding, Ze-Jun

2016-03-01

Thermal rectification and negative differential thermal conductance were realized in harmonic chains in this work. We used the generalized Caldeira-Leggett model to study the heat flow. In contrast to most previous studies considering only the linear system-bath coupling, we considered the nonlinear system-bath coupling based on recent experiment [Eichler et al., Nat. Nanotech. 6, 339 (2011), 10.1038/nnano.2011.71]. When the linear coupling constant is weak, the multiphonon processes induced by the nonlinear coupling allow more phonons transport across the system-bath interface and hence the heat current is enhanced. Consequently, thermal rectification and negative differential thermal conductance are achieved when the nonlinear couplings are asymmetric. However, when the linear coupling constant is strong, the umklapp processes dominate the multiphonon processes. Nonlinear coupling suppresses the heat current. Thermal rectification is also achieved. But the direction of rectification is reversed compared to the results of weak linear coupling constant.

Thermal imaging of spin Peltier effect

Science.gov (United States)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Ling, Xiaohui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002 (China); Yi, Xunong [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun [Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Luo, Hailu, E-mail: hailuluo@hnu.edu.cn [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)

2014-10-13

We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.

The research on rectification and amplification of the image in mobile large container inspection system

International Nuclear Information System (INIS)

Jin Hui; Cheng Jianping; Chen Zhiqiang; Zhang Li

2001-01-01

The author introduces a geometrical rectification algorithm of the image in mobile large container inspection system. The comparison and discussion of the image before and after the rectification have been given. Amplification algorithms of the images are discussed. With all the algorithms, the quality of the images has been improved

Large-Signal DG-MOSFET Modelling for RFID Rectification

Directory of Open Access Journals (Sweden)

R. Rodríguez

2016-01-01

Full Text Available This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus. It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs on rectification is also pointed out.

A study on the test of efficiency of the diagnostic X-ray equipment according to their rectifications

International Nuclear Information System (INIS)

Seon, Jong Ryul

1997-01-01

For the efficient management of the diagnostic x-ray equipment, a nation-wide inspection of hospitals was performed by an inspection institute in Taejon in the first half of 1997. Among those hospitals inspected, 28 equipments(machines) which were over 500 mA were randomly selected according to their characteristics : 7 condenser type x-ray equipments, 7 three control phase of full wave rectification of type remote control x-ray equipments, 7 single phase of full wave rectification type for general radiography equipments, and 7 single phase of full wave rectification type of R/F equipments. We obtained the following results by conducting the experiment based on the efficiency of the equipments mentioned above. 1) When te equipments are analyzed, 2 out of 7 single phase of full wave rectification type of general radiography equipments(28.6%), 3 out of 7 single phase of full wave rectification type of R/F equipments(42.9%), 5 out of 7 three phase of full wave rectification type remote of control x-ray equipments(71.4%), and 4 out of 7 condenser type of x-ray equipments(57.1%) showed suitability. It proves the superiority of the three phase of full wave rectification type of remote control x-ray equipments. 2) From the overall analysis, only about 50% of the equipments(suitability of 14 out of 28) maintain the efficient management. Therefore, maintenance management of equipments is more necessary. If the efficiency of the x-ray equipment is uniformly maintained and managed to prevent the breakdown(trouble) beforehand especially through the continuous inspection of tube voltage, tube current, exposure time, and collimator, the financial loss and exposure dose to the patient, as well as the workers engaged in radiation, can be reduced for better medical service

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

Science.gov (United States)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Observation of the Spin Nernst Effect in Platinum

Science.gov (United States)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Conduction and rectification in NbO{sub x}- and NiO-based metal-insulator-metal diodes

Energy Technology Data Exchange (ETDEWEB)

Osgood, Richard M., E-mail: richard.m.osgood.civ@mail.mil; Giardini, Stephen; Carlson, Joel [US Army Natick Soldier Research Development and Engineering Center (NSRDEC), 15 General Greene Ave., Natick, Massachusetts 01760 (United States); Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States); Chin, Matthew; Nichols, Barbara; Dubey, Madan [RF and Electronics Division, US Army Research Laboratory, Adelphi, Maryland 20783 (United States); Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy [Division of Engineering, Brown University, Box D, Providence, Rhode Island 02912 (United States); Parilla, Philip; Berry, Joseph; Ginley, David [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2016-09-15

Conduction and rectification in nanoantenna-coupled NbO{sub x}- and NiO-based metal-insulator-metal (MIM) diodes (“nanorectennas”) are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current–voltage (I–V) curves, over 10 orders of magnitude in current density, from [NbO{sub x}(native)-Nb{sub 2}O{sub 5}]- and NiO-based samples with oxide thicknesses in the range of 5–36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I–V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I–V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I–V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I–V curves with our model, the barrier heights in Nb-(NbO{sub x}(native)-Nb{sub 2}O{sub 5})-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbO{sub x} (native)-Nb{sub 2}O{sub 5} dielectric properties improve, and the effective Pt-Nb{sub 2}O{sub 5} barrier height increases as the oxide thickness increases. An observation of direct current of ∼4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports

Spin Hall effect transistor

Czech Academy of Sciences Publication Activity Database

Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

2010-01-01

Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

Microwave power engineering generation, transmission, rectification

CERN Document Server

Okress, Ernest C

1968-01-01

Microwave Power Engineering, Volume 1: Generation, Transmission, Rectification considers the components, systems, and applications and the prevailing limitations of the microwave power technology. This book contains four chapters and begins with an introduction to the basic concept and developments of microwave power technology. The second chapter deals with the development of the main classes of high-power microwave and optical frequency power generators, such as magnetrons, crossed-field amplifiers, klystrons, beam plasma amplifiers, crossed-field noise sources, triodes, lasers. The third

Significantly High Thermal Rectification in an Asymmetric Polymer Molecule Driven by Diffusive versus Ballistic Transport.

Science.gov (United States)

Ma, Hao; Tian, Zhiting

2018-01-10

Tapered bottlebrush polymers have novel nanoscale polymer architecture. Using nonequilibrium molecular dynamics simulations, we showed that these polymers have the unique ability to generate thermal rectification in a single polymer molecule and offer an exceptional platform for unveiling different heat conduction regimes. In sharp contrast to all other reported asymmetric nanostructures, we observed that the heat current from the wide end to the narrow end (the forward direction) in tapered bottlebrush polymers is smaller than that in the opposite direction (the backward direction). We found that a more disordered to less disordered structural transition within tapered bottlebrush polymers is essential for generating nonlinearity in heat conduction for thermal rectification. Moreover, the thermal rectification ratio increased with device length, reaching as high as ∼70% with a device length of 28.5 nm. This large thermal rectification with strong length dependence uncovered an unprecedented phenomenon-diffusive thermal transport in the forward direction and ballistic thermal transport in the backward direction. This is the first observation of radically different transport mechanisms when heat flow direction changes in the same system. The fundamentally new knowledge gained from this study can guide exciting research into nanoscale organic thermal diodes.

Bulk magnon spin current theory for the longitudinal spin Seebeck effect

Energy Technology Data Exchange (ETDEWEB)

Rezende, S.M., E-mail: rezende@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Rodríguez-Suárez, R.L. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Facultad de Física, Pontificia Universidad Católica de Chile, Casilla, 306 Santiago (Chile); Cunha, R.O.; López Ortiz, J.C.; Azevedo, A. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil)

2016-02-15

The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient applied across the thickness of a bilayer made of a ferromagnetic insulator (FMI), such as yttrium iron garnet (YIG), and a metallic layer (ML) with strong spin orbit coupling, such as platinum. The LSSE is usually detected by a DC voltage generated along the ML due to the conversion of the spin current into a charge current perpendicular to the static magnetic field by means of the inverse spin Hall effect. Here we present a model for the LSSE that relies on the bulk magnon spin current created by the temperature gradient across the thickness of the FMI. We show that the spin current pumped into the metallic layer by the magnon accumulation in the FMI provides continuity of the spin current at the FMI/ML interface and is essential for the existence of the LSSE. The results of the theory are in good agreement with experimental LSSE data in YIG/Pt bilayers on the variation of the DC voltage with the sample temperature, with the FMI layer thickness and with the intensity of high magnetic fields. - Highlights: • We present a theory for the longitudinal spin Seebeck effect based on bulk magnons. • The model explains quantitatively the measured voltage in YIG/Pt created by the LSSE. • The model explains quantitatively the temperature dependence of LSSE measured in YIG/Pt. • The model agrees qualitatively with the measured dependence of LSSE with YIG thickness. • The model agrees qualitatively with the measured dependence of LSSE on magnetic field.

Nonequilibrium Spin Dynamics in a Trapped Fermi Gas with Effective Spin-Orbit Interactions

International Nuclear Information System (INIS)

Stanescu, Tudor D.; Zhang Chuanwei; Galitski, Victor

2007-01-01

We consider a trapped atomic system in the presence of spatially varying laser fields. The laser-atom interaction generates a pseudospin degree of freedom (referred to simply as spin) and leads to an effective spin-orbit coupling for the fermions in the trap. Reflections of the fermions from the trap boundaries provide a physical mechanism for effective momentum relaxation and nontrivial spin dynamics due to the emergent spin-orbit coupling. We explicitly consider evolution of an initially spin-polarized Fermi gas in a two-dimensional harmonic trap and derive nonequilibrium behavior of the spin polarization. It shows periodic echoes with a frequency equal to the harmonic trapping frequency. Perturbations, such as an asymmetry of the trap, lead to the suppression of the spin echo amplitudes. We discuss a possible experimental setup to observe spin dynamics and provide numerical estimates of relevant parameters

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien; Lee, K.-J.

2011-01-01

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Spin Hall effect-driven spin torque in magnetic textures

KAUST Repository

Manchon, Aurelien

2011-07-13

Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

Dual Phase Change Thermal Diodes for Enhanced Rectification Ratios: Theory and Experiment

KAUST Repository

Cottrill, Anton L.; Wang, Song; Liu, Albert Tianxiang; Wang, Wen-Jun; Strano, Michael S.

2018-01-01

Thermal diodes are materials that allow for the preferential directional transport of heat and are highly promising devices for energy conservation, energy harvesting, and information processing applications. One form of a thermal diode consists of the junction between a phase change and phase invariant material, with rectification ratios that scale with the square root of the ratio of thermal conductivities of the two phases. In this work, the authors introduce and analyse the concept of a Dual Phase Change Thermal Diode (DPCTD) as the junction of two phase change materials with similar phase boundary temperatures but opposite temperature coefficients of thermal conductivity. Such systems possess a significantly enhanced optimal scaling of the rectification ratio as the square root of the product of the thermal conductivity ratios. Furthermore, the authors experimentally design and fabricate an ambient DPCTD enabled by the junction of an octadecane-impregnated polystyrene foam, polymerized using a high internal phase emulsion template (PFH-O) and a poly(N-isopropylacrylamide) (PNIPAM) aqueous solution. The DPCTD shows a significantly enhanced thermal rectification ratio both experimentally (2.6) and theoretically (2.6) as compared with ideal thermal diodes composed only of the constituent materials.

Dual Phase Change Thermal Diodes for Enhanced Rectification Ratios: Theory and Experiment

KAUST Repository

Cottrill, Anton L.

2018-01-15

Thermal diodes are materials that allow for the preferential directional transport of heat and are highly promising devices for energy conservation, energy harvesting, and information processing applications. One form of a thermal diode consists of the junction between a phase change and phase invariant material, with rectification ratios that scale with the square root of the ratio of thermal conductivities of the two phases. In this work, the authors introduce and analyse the concept of a Dual Phase Change Thermal Diode (DPCTD) as the junction of two phase change materials with similar phase boundary temperatures but opposite temperature coefficients of thermal conductivity. Such systems possess a significantly enhanced optimal scaling of the rectification ratio as the square root of the product of the thermal conductivity ratios. Furthermore, the authors experimentally design and fabricate an ambient DPCTD enabled by the junction of an octadecane-impregnated polystyrene foam, polymerized using a high internal phase emulsion template (PFH-O) and a poly(N-isopropylacrylamide) (PNIPAM) aqueous solution. The DPCTD shows a significantly enhanced thermal rectification ratio both experimentally (2.6) and theoretically (2.6) as compared with ideal thermal diodes composed only of the constituent materials.

Conduction and rectification in NbO _x - and NiO-based metal-insulator-metal diodes

Energy Technology Data Exchange (ETDEWEB)

Osgood, Richard M.; Giardini, Stephen; Carlson, Joel; Periasamy, Prakash; Guthrey, Harvey; O' Hayre, Ryan; Chin, Matthew; Nichols, Barbara; Dubey, Madan; Fernandes, Gustavo; Kim, Jin Ho; Xu, Jimmy; Parilla, Philip; Berry, Joseph; Ginley, David

2016-09-01

Conduction and rectification in nanoantenna-coupled NbOx- and NiO-based metal-insulator-metal (MIM) diodes ('nanorectennas') are studied by comparing new theoretical predictions with the measured response of nanorectenna arrays. A new quantum mechanical model is reported and agrees with measurements of current-voltage (I-V) curves, over 10 orders of magnitude in current density, from [NbOx(native)-Nb2O5]- and NiO-based samples with oxide thicknesses in the range of 5-36 nm. The model, which introduces new physics and features, including temperature, electron effective mass, and image potential effects using the pseudobarrier technique, improves upon widely used earlier models, calculates the MIM diode's I-V curve, and predicts quantitatively the rectification responsivity of high frequency voltages generated in a coupled nanoantenna array by visible/near-infrared light. The model applies both at the higher frequencies, when high-energy photons are incident, and at lower frequencies, when the formula for classical rectification, involving derivatives of the I-V curve, may be used. The rectified low-frequency direct current is well-predicted in this work's model, but not by fitting the experimentally measured I-V curve with a polynomial or by using the older Simmons model (as shown herein). By fitting the measured I-V curves with our model, the barrier heights in Nb-(NbOx(native)-Nb2O5)-Pt and Ni-NiO-Ti/Ag diodes are found to be 0.41/0.77 and 0.38/0.39 eV, respectively, similar to literature reports, but with effective mass much lower than the free space value. The NbOx (native)-Nb2O5 dielectric properties improve, and the effective Pt-Nb2O5 barrier height increases as the oxide thickness increases. An observation of direct current of ~4 nA for normally incident, focused 514 nm continuous wave laser beams are reported, similar in magnitude to recent reports. This measured direct current is compared to the prediction for rectified direct current

Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

Science.gov (United States)

Singh, Kunwar Pal

2016-10-12

The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

Spin thermoelectric effects in organic single-molecule devices

Energy Technology Data Exchange (ETDEWEB)

Wang, H.L.; Wang, M.X.; Qian, C.; Hong, X.K.; Zhang, D.B.; Liu, Y.S.; Yang, X.F., E-mail: xfyang@cslg.edu.cn

2017-05-25

Highlights: • A stronger spin thermoelectric performance in a polyacetylene device is observed. • For the antiferromagnetic (AFM) ordering, a transport gap is opened. Thus the thermoelectric effects are largely enhanced. - Abstract: The spin thermoelectric performance of a polyacetylene chain bridging two zigzag graphene nanoribbons (ZGNRs) is investigated based on first principles method. Two different edge spin arrangements in ZGNRs are considered. For ferromagnetic (FM) ordering, transmission eigenstates with different spin indices distributed below and above Fermi level are observed, leading directly to a strong spin thermoelectric effect in a wide temperature range. With the edge spins arranged in the antiferromagnetic (AFM) ordering, an obvious transport gap appears in the system, which greatly enhances the thermoelectric effects. The presence of a small spin splitting also induces a spin thermoelectric effect greater than the charge thermoelectric effect in certain temperature range. In general, the single-molecule junction exhibits the potential to be used for the design of perfect thermospin devices.

FERMILAB: High energy spin effects

Energy Technology Data Exchange (ETDEWEB)

Anon.

1991-03-15

While many physicists would agree that it is important to study interactions of different isospin states (for example comparing proton and neutron data), many of them also accept as normal data averaged or integrated over ordinary spin. However an ongoing programme at Brookhaven studying elastic scattering (where the incoming particles 'bounce' off each other) produced marked spin effects which are not well understood. Our understanding of particle interactions should not be influenced by which observables are easy to measure and which aren't, and until a clear understanding of spin effects emerges, it is important to continue and extend these studies.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Yang, Ping, E-mail: yangpingdm@ujs.edu.cn [Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, Jiangsu University, Zhenjiang 212013 (China); Li, Xialong; Zhao, Yanfan [Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, Jiangsu University, Zhenjiang 212013 (China); Yang, Haiying [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Wang, Shuting, E-mail: wangst@mail.hust.edu.cn [School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

2013-11-01

We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering.

Aging effect of spin accumulation in non-local spin valves

International Nuclear Information System (INIS)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng; Wang, Le; Xu, Xiaoguang; Jiang, Yong

2017-01-01

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Aging effect of spin accumulation in non-local spin valves

Energy Technology Data Exchange (ETDEWEB)

Zhao, Bing; Zhang, Ziyu; Chen, Xiaobing; Zhang, Xiaohan; Pan, Jiahui; Ma, Jiajun; Li, Juan; Wang, Zhicheng [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Wang, Le, E-mail: wangle@ruc.edu.cn [Department of Physics, Renmin University of China, Beijing 100872 (China); Xu, Xiaoguang, E-mail: xgxu@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Jiang, Yong [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

2017-06-15

Highlights: • First time to reveal the whole temporal evolution life of spintronics devices. • The gradual oxidation of the junctions’ areas and that of the channel are confirmed to be the predominant factors to determine the temporal evolution. • Physically, the temporal evolution can be evaluated by theories of S. Takahashi and A. Fert. • This study may offer some useful advice for the design and protection of future industrial spintronics devices. - Abstract: A temporal evolution of spin accumulation of Co/MgO/Ag spin valves have been studied by using the nonlocal spin detection technique over almost a 3-month period in the ambient environment after the fabrication of the devices. Three different stages of the spin accumulation are first observed due to aging effect. The aging effect comes from two contributions–the gradual oxidation of the Ag/MgO and MgO/Co interfaces at the junctions’ areas which arises from the annealing process and the oxidation of the side surfaces of the Ag channels. The theories of S. Takahashi and A. Fert are introduced to evaluate the different evolution stages of spin accumulation.

Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

Science.gov (United States)

Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

2010-07-27

We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

Anisotropic intrinsic spin Hall effect in quantum wires

International Nuclear Information System (INIS)

Cummings, A W; Akis, R; Ferry, D K

2011-01-01

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

Theory of the spin Peltier effect

Science.gov (United States)

Ohnuma, Y.; Matsuo, M.; Maekawa, S.

2017-10-01

A microscopic theory of the spin Peltier effect in a bilayer structure comprising a paramagnetic metal (PM) and a ferromagnetic insulator (FI) based on the nonequilibrium Green's function method is presented. Spin current and heat current driven by temperature gradient and spin accumulation are formulated as functions of spin susceptibilities in the PM and the FI, and are summarized by Onsager's reciprocal relations. By using the current formulas, we estimate heat generation and absorption at the interface driven by the heat-current injection mediated by spins from PM into FI.

Nonlinear optical rectification and second and third harmonic generation in GaAs δ-FET systems under hydrostatic pressure

International Nuclear Information System (INIS)

Martínez-Orozco, J.C.; Mora-Ramos, M.E.; Duque, C.A.

2012-01-01

The GaAs n-type delta-doped field effect transistor is proposed as a source for nonlinear optical responses such as second order rectification and second and third harmonic generation. Particular attention is paid to the effect of hydrostatic pressure on these properties, related with the pressure-induced modifications of the energy level spectrum. The description of the one-dimensional potential profile is made including Hartree and exchange and correlation effects via a Thomas–Fermi-based local density approximation. The allowed energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the coefficients of nonlinear optical rectification and second and third harmonic generation are reported for several values of the hydrostatic pressure. - Highlights: ► GaAs n-type delta-doped field effect transistor. ► NOR and SHG are enhanced as a result of the pressure. ► THG is quenched as a result of the pressure. ► The zero pressure situation is the best scenario for the THG.

Extrinsic spin Nernst effect from first principles.

Science.gov (United States)

Tauber, Katarina; Gradhand, Martin; Fedorov, Dmitry V; Mertig, Ingrid

2012-07-13

We present an ab initio description of the thermal transport phenomenon called the spin Nernst effect. It refers to generation of a spin accumulation or a pure spin current transverse to an applied temperature gradient. This is similar to the intensively studied spin Hall effect described by intrinsic and extrinsic mechanisms due to an applied electric field. Analogously, several contributions are present for the spin Nernst effect. Here we investigate the extrinsic skew scattering mechanism which is dominant in the limit of dilute alloys. Our calculations are based on a fully relativistic Korringa-Kohn-Rostoker method and a solution of the linearized Boltzmann equation. As a first application, we consider a Cu host with Au, Ti, and Bi impurities.

Spin hall effect associated with SU(2) gauge field

Science.gov (United States)

Tao, Y.

2010-01-01

In this paper, we focus on the connection between spin Hall effect and spin force. Here we investigate that the spin force due to spin-orbit coupling, which, in two-dimensional system, is equivalent to forces of Hirsch and Chudnovsky besides constant factors 3 and frac{3}{2} respectively, is a part of classic Anandan force, and that the spin Hall effect is an anomalous Hall effect. Furthermore, we develop the method of AC phase to derive the expression for the spin force, and note that the most basic spin Hall effect indeed originate from the AC phase and is therefore an intrinsic quantum mechanical property of spin. This method differs from approach of Berry phase in the study of anomalous Hall effect , which is the intrinsic property of the perfect crystal. On the other hand, we use an elegant skill to show that the Chudnovsky-Drude model is reasonable. Here we have improved the theoretical values of spin Hall conductivity of Chudnovsky. Compared to the theoretical values of spin Hall conductivity in the Chudnovsky-Drude model, ours are in better agreement with experimentation. Finally, we discuss the relation between spin Hall effect and fractional statistics.

Spin Hall effect for anyons

International Nuclear Information System (INIS)

Dhar, S.; Basu, B.; Ghosh, Subir

2007-01-01

We explain the intrinsic spin Hall effect from generic anyon dynamics in the presence of external electromagnetic field. The free anyon is represented as a spinning particle with an underlying non-commutative configuration space. The Berry curvature plays a major role in the analysis

Effect of quantum tunneling on spin Hall magnetoresistance.

Science.gov (United States)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-22

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Enhanced thermo-spin effects in iron-oxide/metal multilayers

Science.gov (United States)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2015-07-16

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Otani, Y.; Manchon, Aurelien

2015-01-01

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Electric-field effects in optically generated spin transport

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Electric-field effects in optically generated spin transport

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2009-05-25

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Interannual variability in the atmospheric CO2 rectification over a boreal forest region

Science.gov (United States)

Chen, Baozhang; Chen, Jing M.; Worthy, Douglas E. J.

2005-08-01

Ecosystem CO2 exchange with the atmosphere and the planetary boundary layer (PBL) dynamics are correlated diurnally and seasonally. The strength of this kind of covariation is quantified as the rectifier effect, and it affects the vertical gradient of CO2 and thus the global CO2 distribution pattern. An 11-year (1990-1996, 1999-2002), continuous CO2 record from Fraserdale, Ontario (49°52'29.9″N, 81°34'12.3″W), along with a coupled vertical diffusion scheme (VDS) and ecosystem model named Boreal Ecosystem Productivity Simulator (BEPS), are used to investigate the interannual variability of the rectifier effect over a boreal forest region. The coupled model performed well (r2 = 0.70 and 0.87, at 40 m at hourly and daily time steps, respectively) in simulating CO2 vertical diffusion processes. The simulated annual atmospheric rectifier effect varies from 3.99 to 5.52 ppm, while the diurnal rectifying effect accounted for about a quarter of the annual total (22.8˜28.9%).The atmospheric rectification of CO2 is not simply influenced by terrestrial source and sink strengths, but by seasonal and diurnal variations in the land CO2 flux and their interaction with PBL dynamics. Air temperature and moisture are found to be the dominant climatic factors controlling the rectifier effect. The annual rectifier effect is highly correlated with annual mean temperature (r2 = 0.84), while annual mean air relative humidity can explain 51% of the interannual variation in rectification. Seasonal rectifier effect is also found to be more sensitive to climate variability than diurnal rectifier effect.

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

International Nuclear Information System (INIS)

Eslami, Leila; Esmaeilzadeh, Mahdi

2014-01-01

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

Science.gov (United States)

Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

2018-03-01

It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

NARCIS (Netherlands)

Mosendz, O.; Vlaminck, V.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

2010-01-01

Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced

Thermal conductivity and thermal rectification in unzipped carbon nanotubes

International Nuclear Information System (INIS)

Ni Xiaoxi; Li Baowen; Zhang Gang

2011-01-01

We study the thermal transport in completely unzipped carbon nanotubes, which are called graphene nanoribbons, partially unzipped carbon nanotubes, which can be seen as carbon-nanotube-graphene-nanoribbon junctions, and carbon nanotubes by using molecular dynamics simulations. It is found that the thermal conductivity of a graphene nanoribbon is much less than that of its perfect carbon nanotube counterparts because of the localized phonon modes at the boundary. A partially unzipped carbon nanotube has the lowest thermal conductivity due to additional localized modes at the junction region. More strikingly, a significant thermal rectification effect is observed in both partially unzipped armchair and zigzag carbon nanotubes. Our results suggest that carbon-nanotube-graphene-nanoribbon junctions can be used in thermal energy control.

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165Ho

International Nuclear Information System (INIS)

Fasoli, U.; Galeazzi, G.; Pavan, P.; Toniolo, D.; Zago, G.; Zannoni, R.

1978-01-01

The spin-spin effect in the total neutron cross section of polarized neutrons on polarized 165 Ho has been measured in the energy interval 0.4 to 2.5 MeV, in perpendicular geometry. The results are consistent with zero effect. The spin-spin cross section sigmasub(ss) has been theoretically evaluated by a non-adiabatic coupled-channel calculation. From the comparison between the experimental and theoretical results a value Vsub(ss) = 9+-77 keV for the strength of the spin-spin potential has been obtained. Compound-nucleus effects do not seem to be relevant. (Auth.)

The effects of spin in gases

International Nuclear Information System (INIS)

Laloee, F.; Freed, J.H.

1988-01-01

Low-density gases, in which atoms are separated by large distances, have long provided an enjoyable playground for physicists. One might suppose the pleasure of the playground would by now have been exhausted by the very simplicity of low-density gases. Recent work by a number of investigators including the author shows that this is not the case low-density gases continue to serve up a rich variety of phenomena as well as counterintuitive surprises. In particular, the macroscopic properties of a gas composed of individual hydrogen or helium atoms can under special circumstances by changed dramatically by quantum-mechanical effects. According to quantum theory, the nucleus of an atom behaves in a way similar to a rotating top, which has angular momentum about its axis of rotation; that is, the nucleus has spin, known more precisely as spin angular momentum. If the atoms of a gas are spin-polarized, so that their nuclei all have their spins pointing in the same direction, the viscosity of the gas can be changed enormously and so can its ability to conduct heat. Quantum-mechanical correlations among the nuclei called spin waves, which up to now had been observed only in certain liquids and solids such as magnets, can also arise. The changes are large enough for one to say the quantum-mechanical effects have caused the gas to take on entirely new properties. In a certain sense it is amazing to think that polarizing the nuclear spins can have any effect on the macroscopic properties of the gas, since the nuclear spins are son weakly coupled to the outside world. Yet the observations are in full agreement with with theory. Moreover, because spin-polarized gases are still fairly simple systems, they can be understood in terms fundamental principles, something that is still not possible to do in the case of liquids and solids

Universal intrinsic spin Hall effect

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Culcer, D.; Sinitsyn, N. A.; Niu, Q.; Jungwirth, Tomáš; MacDonald, A. H.

2004-01-01

Roč. 92, č. 12 (2004), 126603/1-126603/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor quantum wells * spin-orbit interaction * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

Mesoscopic spin Hall effect in semiconductor nanostructures

Science.gov (United States)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

Directory of Open Access Journals (Sweden)

N. M. Miskovsky

2012-01-01

Full Text Available We present a new and viable method for optical rectification. This approach has been demonstrated both theoretically and experimentally and is the basis fot the development of devices to rectify radiation through the visible. This technique for rectification is based not on conventional material or temperature asymmetry as used in MIM (metal/insulator/metal or Schottky diodes, but on a purely sharp geometric property of the antenna. This sharp “tip” or edge with a collector anode constitutes a tunnel junction. In these devices the rectenna (consisting of the antenna and the tunnel junction acts as the absorber of the incident radiation and the rectifier. Using current nanofabrication techniques and the selective atomic layer deposition (ALD process, junctions of 1 nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum. To assess the viability of our approach, we review the development of nanoantenna structures and tunnel junctions capable of operating in the visible region. In addition, we review the detailed process of rectification and present methodologies for analysis of diode data. Finally, we present operational designs for an optical rectenna and its fabrication and discuss outstanding problems and future work.

Nano scale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

International Nuclear Information System (INIS)

Miskovsky, N.M.; Cutler, P.H.; Miskovsky, N.M.; Cutler, P.H.; Lerne, P.B.; Mayer, A.; Weiss, B.L.; Willis, B.; Sullivan, T.E.

2012-01-01

We present a new and viable method for optical rectification. This approach has been demonstrated both theoretically and experimentally and is the basis fot the development of devices to rectify radiation through the visible. This technique for rectification is based not on conventional material or temperature asymmetry as used in MIM (metal/insulator/metal) or Schottky diodes, but on a purely sharp geometric property of the antenna. This sharp tip or edge with a collector anode constitutes a tunnel junction. In these devices the rectenna (consisting of the antenna and the tunnel junction) acts as the absorber of the incident radiation and the rectifier. Using current nano fabrication techniques and the selective atomic layer deposition (ALD) process, junctions of 1?nm can be fabricated, which allow for rectification of frequencies up to the blue portion of the spectrum. To assess the viability of our approach, we review the development of nano antenna structures and tunnel junctions capable of operating in the visible region. In addition, we review the detailed process of rectification and present methodologies for analysis of diode data. Finally, we present operational designs for an optical rectenna and its fabrication and discuss outstanding problems and future work.

Observation of the Spin Peltier Effect for Magnetic Insulators

NARCIS (Netherlands)

Flipse, J.; Dejene, F.K.; Wagenaar, D.; Bauer, G.E.W.; Ben Youssef, J.; Van Wees, B.J.

2014-01-01

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin

The effect of spin in swing bowling in cricket: model trajectories for spin alone

Science.gov (United States)

Robinson, Garry; Robinson, Ian

2015-02-01

In ‘swing’ bowling, as employed by fast and fast-medium bowlers in cricket, back-spin along the line of the seam is normally applied in order to keep the seam vertical and to provide stability against ‘wobble’ of the seam. Whilst spin is normally thought of as primarily being the slow bowler's domain, the spin applied by the swing bowler has the side-effect of generating a lift or Magnus force. This force, depending on the orientation of the seam and hence that of the back-spin, can have a side-ways component as well as the expected vertical ‘lift’ component. The effect of the spin itself, in influencing the trajectory of the fast bowler's delivery, is normally not considered, presumably being thought of as negligible. The purpose of this paper is to investigate, using calculated model trajectories, the amount of side-ways movement due to the spin and to see how this predicted movement compares with the total observed side-ways movement. The size of the vertical lift component is also estimated. It is found that, although the spin is an essential part of the successful swing bowler's delivery, the amount of side-ways movement due to the spin itself amounts to a few centimetres or so, and is therefore small, but perhaps not negligible, compared to the total amount of side-ways movement observed. The spin does, however, provide a considerable amount of lift compared to the equivalent delivery bowled without spin, altering the point of pitching by up to 3 m, a very large amount indeed. Thus, for example, bowling a ball with the seam pointing directly down the pitch and not designed to swing side-ways at all, but with the amount of back-spin varied, could provide a very powerful additional weapon in the fast bowler's arsenal. So-called ‘sling bowlers’, who use a very low arm action, can take advantage of spin since effectively they can apply side-spin to the ball, giving rise to a large side-ways movement, ˜ 20{}^\\circ cm or more, which certainly is

Nanoscale rectenna for broadband rectification of light from infrared to visible

Science.gov (United States)

Zimmerman, Darin; Chen, James; Phillips, Michael; Rager, Dennis; Sinisi, Zachary; Wambold, Raymond; Weisel, Gary; Weiss, Brock; Willis, Brian; Miskovsky, Nicholas

2014-03-01

We describe a novel approach to the efficient collection and rectification of solar radiation in a device designed to operate from the infrared through the visible. Here, a nanoscale, rectenna array acts both as an absorber of incident radiation and as a rectifier. Rectification derives not from temperature or material asymmetry, as with metal-insulator-metal or silicon-based, Schottky diodes. Instead, it derives from the geometric asymmetry of the rectenna, which is composed of a pointed tip and a flat collector anode. In this arrangement, the difference between the potential barriers for forward and reverse bias results in a rectified dc current. To achieve anode-cathode gap distances within the tunneling regime, we employ selective atomic-layer deposition of copper applied to palladium rectenna arrays produced by electron-beam lithography. We present details of device fabrication and preliminary results of computer simulation, optical characterization, and electro-optical response. This work supported in part by the National Science Foundation: ECCS-1231248 and ECCS-1231313.

Inelastic transport and low-bias rectification in a single-molecule diode.

Science.gov (United States)

Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

Spin-orbit torque induced magnetic vortex polarity reversal utilizing spin-Hall effect

Science.gov (United States)

Li, Cheng; Cai, Li; Liu, Baojun; Yang, Xiaokuo; Cui, Huanqing; Wang, Sen; Wei, Bo

2018-05-01

We propose an effective magnetic vortex polarity reversal scheme that makes use of spin-orbit torque introduced by spin-Hall effect in heavy-metal/ferromagnet multilayers structure, which can result in subnanosecond polarity reversal without endangering the structural stability. Micromagnetic simulations are performed to investigate the spin-Hall effect driven dynamics evolution of magnetic vortex. The mechanism of magnetic vortex polarity reversal is uncovered by a quantitative analysis of exchange energy density, magnetostatic energy density, and their total energy density. The simulation results indicate that the magnetic vortex polarity is reversed through the nucleation-annihilation process of topological vortex-antivortex pair. This scheme is an attractive option for ultra-fast magnetic vortex polarity reversal, which can be used as the guidelines for the choice of polarity reversal scheme in vortex-based random access memory.

Direct observation of the spin-dependent Peltier effect.

Science.gov (United States)

Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J

2012-02-05

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.

Local spin valve effect in lateral (Ga,MnAs/GaAs spin Esaki diode devices

Directory of Open Access Journals (Sweden)

M. Ciorga

2011-06-01

Full Text Available We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,MnAs/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal.

Lock-in thermography measurements of the spin Peltier effect in a compensated ferrimagnet and its comparison to the spin Seebeck effect

Science.gov (United States)

Yagmur, A.; Iguchi, R.; Geprägs, S.; Erb, A.; Daimon, S.; Saitoh, E.; Gross, R.; Uchida, K.

2018-05-01

The spin Peltier effect (SPE) in a junction comprising a gadolinium-iron-garnet (GdIG) slab and a Pt film has been investigated around the magnetization compensation temperature of GdIG by means of the lock-in thermography method. When a charge current is applied to the Pt layer, a spin current is generated across the Pt/GdIG interface via the spin Hall effect in Pt. This spin current induces a heat current and a measurable temperature change near the Pt/GdIG interface due to the SPE. The SPE signal in the Pt/GdIG junction shows a sign change around the magnetization compensation temperature, demonstrating the similar temperature dependence of the SPE and the spin Seebeck effect for the Pt/GdIG hybrid system.

Observation of the spin Peltier effect for magnetic insulators.

Science.gov (United States)

Flipse, J; Dejene, F K; Wagenaar, D; Bauer, G E W; Ben Youssef, J; van Wees, B J

2014-07-11

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modeling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

International Nuclear Information System (INIS)

Wu, Stephen M.; Hoffman, Jason; Pearson, John E.; Bhattacharya, Anand

2014-01-01

The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3 O 4 with the ferromagnetic metal Co 0.2 Fe 0.6 B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3 O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. These experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Self-consistent treatment of spin and magnetization dynamic effect in spin transfer switching

International Nuclear Information System (INIS)

Guo Jie; Tan, Seng Ghee; Jalil, Mansoor Bin Abdul; Koh, Dax Enshan; Han, Guchang; Meng, Hao

2011-01-01

The effect of itinerant spin moment (m) dynamic in spin transfer switching has been ignored in most previous theoretical studies of the magnetization (M) dynamics. Thus in this paper, we proposed a more refined micromagnetic model of spin transfer switching that takes into account in a self-consistent manner of the coupled m and M dynamics. The numerical results obtained from this model further shed insight on the switching profiles of m and M, both of which show particular sensitivity to parameters such as the anisotropy field, the spin torque field, and the initial deviation between m and M.

Photonic spin Hall effect at metasurfaces.

Science.gov (United States)

Yin, Xiaobo; Ye, Ziliang; Rho, Junsuk; Wang, Yuan; Zhang, Xiang

2013-03-22

The spin Hall effect (SHE) of light is very weak because of the extremely small photon momentum and spin-orbit interaction. Here, we report a strong photonic SHE resulting in a measured large splitting of polarized light at metasurfaces. The rapidly varying phase discontinuities along a metasurface, breaking the axial symmetry of the system, enable the direct observation of large transverse motion of circularly polarized light, even at normal incidence. The strong spin-orbit interaction deviates the polarized light from the trajectory prescribed by the ordinary Fermat principle. Such a strong and broadband photonic SHE may provide a route for exploiting the spin and orbit angular momentum of light for information processing and communication.

Tunable thermal rectification in graphene/hexagonal boron nitride hybrid structures

Science.gov (United States)

Chen, Xue-Kun; Hu, Ji-Wen; Wu, Xi-Jun; Jia, Peng; Peng, Zhi-Hua; Chen, Ke-Qiu

2018-02-01

Using non-equilibrium molecular dynamics simulations, we investigate thermal rectification (TR) in graphene/hexagonal boron nitride (h-BN) hybrid structures. Two different structural models, partially substituting graphene into h-BN (CBN) and partially substituting h-BN into graphene (BNC), are considered. It is found that CBN has a significant TR effect while that of BNC is very weak. The observed TR phenomenon can be attributed to the resonance effect between out-of-plane phonons of graphene and h-BN domains in the low-frequency region under negative temperature bias. In addition, the influences of ambient temperature, system size, defect number and substrate interaction are also studied to obtain the optimum conditions for TR. More importantly, the TR ratio could be effectively tuned through chemical and structural diversity. A moderate C/BN ratio and parallel arrangement are found to enhance the TR ratio. Detailed phonon spectra analyses are conducted to understand the thermal transport behavior. This work extends hybrid engineering to 2D materials for achieving TR.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

Science.gov (United States)

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Spin Hall effect on a noncommutative space

International Nuclear Information System (INIS)

Ma Kai; Dulat, Sayipjamal

2011-01-01

We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V 1 (r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, σ=ρθ (ρ is the electron concentration, θ is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

Helicity formalism and spin effects

International Nuclear Information System (INIS)

Anselmino, M.; Caruso, F.; Piovano, U.

1990-01-01

The helicity formalism and the technique to compute amplitudes for interaction processes involving leptons, quarks, photons and gluons are reviewed. Explicit calculations and examples of exploitation of symmetry properties are shown. The formalism is then applied to the discussion of several hadronic processes and spin effects: the experimental data, when related to the properties of the elementary constituent interactions, show many not understood features. Also the nucleon spin problem is briefly reviewed. (author)

Forward rectification: spatial image normalization for a video from a forward facing vehicle camera

Science.gov (United States)

Prun, Viktor; Polevoy, Dmitri; Postnikov, Vassiliy

2017-03-01

The work in this paper is focused around visual ADAS (Advanced Driver Assistance Systems). We introduce forward rectification - a technique for making computer vision algorithms more robust against camera mount point and mount angles. Using the technique can increase the quality of recognition as well as lower the dimensionality for algorithm invariance, making it possible to apply simpler affine-invariant algorithms for applications that require projective invariance. Providing useful results this rectification requires thorough calibration of the camera, which can be done automatically or semi-automatically. The technique is of general nature and can be applied to different algorithms, such as pattern matching detectors, convolutional neural networks. The applicability of the technique is demonstrated on HOG-based car detector detection rate.

High spin effects in superdense matter

International Nuclear Information System (INIS)

Bowers, R.L.; Gleeson, A.M.; Pedigo, R.D.

1978-04-01

A model of relativistic interacting superdense matter with vector, scalar and symmetric second rank tensor exchange is developed. The Green's functions of the model are solved in the self consistent Hartree approximation. The contributions of the symmetric second rank tensor are emphasized. It is found that these high spin contributions effect the superdense matter at densities just beyond those predicted to occur in neutron star matter or nuclear collisions. The spin-two effects do produce an unusual asymptotic dependence, p = - 1 / 3 epsilon. This effect is examined in a simple model of the early universe

Experimental realization of a silicon spin field-effect transistor

OpenAIRE

Huang, Biqin; Monsma, Douwe J.; Appelbaum, Ian

2007-01-01

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after...

Effective suppression of thermoelectric voltage in nonlocal spin-valve measurement

Science.gov (United States)

Ariki, Taisei; Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi

2017-06-01

We demonstrate that the background signal in the nonlocal spin-valve measurement can be sufficiently suppressed by optimizing the electrode design of the lateral spin valve. A relatively long length scale of heat propagation produces spin-independent thermoelectric signals under the combination of the Peltier and Seebeck effects. These unfavorable signals can be reduced by mixing the Peltier effects in two transparent ferromagnetic/nonmagnetic junctions. Proper understanding of the contribution from the heat current in no spin-current area is a key for effective reduction of the spin-independent background signal.

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

RF Rectification on LAPD and NSTX: the relationship between rectified currents and potentials

Science.gov (United States)

Perkins, R. J.; Carter, T.; Caughman, J. B.; van Compernolle, B.; Gekelman, W.; Hosea, J. C.; Jaworski, M. A.; Kramer, G. J.; Lau, C.; Martin, E. H.; Pribyl, P.; Tripathi, S. K. P.; Vincena, S.

2017-10-01

RF rectification is a sheath phenomenon important in the fusion community for impurity injection, hot spot formation on plasma-facing components, modifications of the scrape-off layer, and as a far-field sink of wave power. The latter is of particular concern for the National Spherical Torus eXperiment (NSTX), where a substantial fraction of the fast-wave power is lost to the divertor along scrape-off layer field lines. To assess the relationship between rectified currents and rectified voltages, detailed experiments have been performed on the Large Plasma Device (LAPD). An electron current is measured flowing out of the antenna and into the limiters, consistent with RF rectification with a higher RF potential at the antenna. The scaling of this current with RF power will be presented. The limiters are also floated to inhibit this DC current; the impact of this change on plasma-potential and wave-field measurements will be shown. Comparison to data from divertor probes in NSTX will be made. These experiments on a flexible mid-sized experiment will provide insight and guidance into the effects of ICRF on the edge plasma in larger fusion experiments. Funded by the DOE OFES (DE-FC02-07ER54918 and DE-AC02-09CH11466), NSF (NSF- PHY 1036140), and the Univ. of California (12-LR- 237124).

Spin effects in high energy quark-quark scattering

International Nuclear Information System (INIS)

Goloskokov, S.V.; Selyugin, O.V.

1993-01-01

The spin amplitudes in high-energy quark-quark scattering at /t/>1 GeV 2 are analyzed. It is shown that the gluon contributions in the QCDα s 3 order lead to the spin-flip amplitude growing as s. This means the existence of the spin-flip part in pomeron exchange. The resulting T f is about few per cent of the spin-non-flip contribution. The factorization of the large-distance and high-energy effects in the spin-flip amplitude is obtained. 13 refs.; 2 figs.; 1 tab

Spin-accumulation effect in magnetic nano-bridge

International Nuclear Information System (INIS)

Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

2004-01-01

Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

Spin-dependent Peltier effect in 3D topological insulators

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

2013-03-01

The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

Spin-dependent electron many-body effects in GaAs

Science.gov (United States)

Nemec, P.; Kerachian, Y.; van Driel, H. M.; Smirl, Arthur L.

2005-12-01

Time- and polarization-resolved differential transmission measurements employing same and oppositely circularly polarized 150fs optical pulses are used to investigate spin characteristics of conduction band electrons in bulk GaAs at 295K . Electrons and holes with densities in the 2×1016cm-3-1018cm-3 range are generated and probed with pulses whose center wavelength is between 865 and 775nm . The transmissivity results can be explained in terms of the spin sensitivity of both phase-space filling and many-body effects (band-gap renormalization and screening of the Coulomb enhancement factor). For excitation and probing at 865nm , just above the band-gap edge, the transmissivity changes mainly reflect spin-dependent phase-space filling which is dominated by the electron Fermi factors. However, for 775nm probing, the influence of many-body effects on the induced transmission change are comparable with those from reduced phase space filling, exposing the spin dependence of the many-body effects. If one does not take account of these spin-dependent effects one can misinterpret both the magnitude and time evolution of the electron spin polarization. For suitable measurements we find that the electron spin relaxation time is 130ps .

Spin and magnetization effects in plasmas

International Nuclear Information System (INIS)

Brodin, G; Marklund, M; Zamanian, J; Stefan, M

2011-01-01

Quantum effects in plasmas are of interest for a diverse set of systems, and have thus as a field been revived and attracted a lot of attention from a wide community over the past decade. In models of quantum plasmas, the effects studied mostly are due to the quantum particle dispersion and tunnelling. Such effects can be of importance in dense systems and on short length scales. There are also a number of effects related to spin and statistics. However, up to recently the magnetization effect in plasmas due to the intrinsic electron spin has been largely ignored. The magnetization dynamics of e.g. solids has many important applications, such as components for memory storage, but has also been discussed in more 'proper' plasma environments, such as fusion plasmas. Furthermore, also from a basic science point-of-view the effects of intrinsic spin and gyromagnetic effects are of considerable interest. Here we give a short review of a number of different models for treating magnetization effects in plasmas, with a focus on recent results. In particular, the transition between kinetic models and fluid models is discussed. We also give a number of examples of applications of such theories, as well as an outlook for possible future work.

Magnetoresistance effect of heat generation in a single-molecular spin-valve

International Nuclear Information System (INIS)

Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

2016-01-01

Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily. - Highlights: • Spin-valve effect of heat generation happens when Coulomb repulsion in quantum dot is less than phonon frequency. • When Coulomb repulsion is larger than phonon frequency, inverse spin-valve effect appears and is enlarged with bias increasing. • The variation of spin polarization degree can change heat generation effectively. • The heat magnetoresistance can be modulated from heat-resistance to heat-gain by gate voltage easily.

Proposed new test of spin effects in general relativity.

Science.gov (United States)

O'Connell, R F

2004-08-20

The recent discovery of a double-pulsar PSR J0737-3039A/B provides an opportunity of unequivocally observing, for the first time, spin effects in general relativity. Existing efforts involve detection of the precession of the spinning body itself. However, for a close binary system, spin effects on the orbit may also be discernible. Not only do they add to the advance of the periastron (by an amount which is small compared to the conventional contribution) but they also give rise to a precession of the orbit about the spin direction. The measurement of such an effect would also give information on the moment of inertia of pulsars.

Resonant spin Hall effect in two dimensional electron gas

Science.gov (United States)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Science.gov (United States)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-12-15

Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

The Gravity of Photons and the Necessary Rectification of Einstein Equation

Directory of Open Access Journals (Sweden)

Lo C. Y.

2006-01-01

Full Text Available It is pointed out that Special Relativity together with the principle of causality implies that the gravity of an electromagnetic wave is an accompanying gravitational wave propagating with the same speed. Since a gravitational wave carries energy-momentum, this accompanying wave would make the energy-stress tensor of the light to be different from the electromagnetic energy-stress tensor, and thus can produce a geodesic equation for the photons. Moreover, it is found that the appropriate Einstein equation must additionally have the photonic energy-stress tensor with the antigravity coupling in the source term. This would correct that, in disagreement with the calculations for the bending of light, existing solutions of gravity for an electromagnetic wave, is unbounded. This rectification is confirmed by calculating the gravity of electromagnetic plane-waves. The gravity of an electromagnetic wave is indeed an accompanying gravitational wave. Moreover, these calculations show the first time that Special Relativity and General Relativity are compatible because the physical meaning of coordinates has been clarified. The success of this rectification makes General Relativity standing out further among theories of gravity.

Widespread spin polarization effects in photoemission from topological insulators

Energy Technology Data Exchange (ETDEWEB)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

Unique spin-polarized transmission effects in a QD ring structure

Science.gov (United States)

Hedin, Eric; Joe, Yong

2010-10-01

Spintronics is an emerging field in which the spin of the electron is used for switching purposes and to communicate information. In order to obtain spin-polarized electron transmission, the Zeeman effect is employed to produce spin-split energy states in quantum dots which are embedded in the arms of a mesoscopic Aharonov-Bohm (AB) ring heterostructure. The Zeeman splitting of the QD energy levels can be induced by a parallel magnetic field, or by a perpendicular field which also produces AB-effects. The combination of these effects on the transmission resonances of the structure is studied analytically and several parameter regimes are identified which produce a high degree of spin-polarized output. Contour and line plots of the weighted spin polarization as a function of electron energy and magnetic field are presented to visualize the degree of spin-polarization. Taking advantage of these unique parameter regimes shows the potential promise of such devices for producing spin-polarized currents.

Enhancement of the spin Peltier effect in multilayers

Science.gov (United States)

Uchida, K.; Iguchi, R.; Daimon, S.; Ramos, R.; Anadón, A.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Aguirre, M. H.; Ibarra, M. R.; Saitoh, E.

2017-05-01

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n . This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.

Intrinsic anharmonic effects on the phonon frequencies and effective spin-spin interactions in a quantum simulator made from trapped ions in a linear Paul trap

Science.gov (United States)

McAneny, M.; Freericks, J. K.

2014-11-01

The Coulomb repulsion between ions in a linear Paul trap gives rise to anharmonic terms in the potential energy when expanded about the equilibrium positions. We examine the effect of these anharmonic terms on the accuracy of a quantum simulator made from trapped ions. To be concrete, we consider a linear chain of Yb171+ ions stabilized close to the zigzag transition. We find that for typical experimental temperatures, frequencies change by no more than a factor of 0.01 % due to the anharmonic couplings. Furthermore, shifts in the effective spin-spin interactions (driven by a spin-dependent optical dipole force) are also, in general, less than 0.01 % for detunings to the blue of the transverse center-of-mass frequency. However, detuning the spin interactions near other frequencies can lead to non-negligible anharmonic contributions to the effective spin-spin interactions. We also examine an odd behavior exhibited by the harmonic spin-spin interactions for a range of intermediate detunings, where nearest-neighbor spins with a larger spatial separation on the ion chain interact more strongly than nearest neighbors with a smaller spatial separation.

Valley–spin Seebeck effect in heavy group-IV monolayers

International Nuclear Information System (INIS)

Zhai, Xuechao; Wang, Shengdong; Zhang, Yan

2017-01-01

Akin to electron spin, the valley has become another highly valued degree of freedom in modern electronics, specifically after tremendous studies on monolayers of group-IV materials, i.e. graphene, silicene, germanene and stanene. Except for graphene, the other heavy group-IV monolayers have observable intrinsic spin–orbit interactions due to their buckled structures. Distinct from the usual electric or optical control of valley and spin, we here employ a temperature difference to drive electron motion in ferromagnetic heavy group-IV monolayers via designing a caloritronic device locally modulated by an interlayer electric (E z ) field. A unique valley–spin Seebeck (VSS) effect is discovered, with the current contributed only by one (the other) valley and one (the other) spin moving along one (the opposite) direction. This effect is suggested to be detected below the critical temperature about 18 K for silicene, 200 K for germanene and 400 K for stanene, arising from the characteristic valley–spin nondegenerate band structures tuned by the E z field, but cannot be driven in graphene without spin–orbit interaction. Above the critical temperature, the VSS effect is broken by overlarge temperature broadening. Besides the temperature, it is also found that the E z field can drive a transition between the VSS effect and the normal spin Seebeck effect. Further calculations indicate that the VSS effect is robust against many realistic perturbations. Our research represents a conceptually but substantially major step towards the study of the Seebeck effect. These findings provide a platform for encoding information simultaneously by the valley and spin quantum numbers of electrons in future thermal-logic circuits and energy-saving devices. (paper)

Quantum Effects in Nanoantennas and Their Applications in Tunability, Mixing, and Rectification

KAUST Repository

Chen, Pai-Yen

2015-08-04

It has been recently shown that optical nanoantennas made of single or paired metallic nanoparticles can efficiently couple the propagating light into and from deeply subwavelength volumes. The strong light-matter interaction mediated by surface plasmons in metallic nanostructures allows for localizing optical fields to a subdiffraction-limited region, thereby enhancing emission of nanoemitters and offering the flexible control of nanofocused radiation. Here we theoretically study the nanodipole antennas with submicroscopic gaps, i.e. a few nanometers, for which there exists linear and high-order nonlinear quantum conductivities due to the photon-assisted tunneling effect. Noticeably, these quantum conductivities induced at the nanogap are enhanced by several orders of magnitude, due to the strongly localized optical fields associated with the plasmonic resonance.In this talk, we will show that by tailoring the geometry of nanoantennas and the quantum well structure, a quantum nanodipole antenna with a gap size of few nanometers can induce linear, high-order quantum conductivities that are considerably enhanced by the surface plasmon resonance. We envisage here a number of intriguing nanophotonic applications of these quantum nanoantennas, including (i) modulatable and switchable radiators and metamaterials, with electronic and all-optical tuning (which is related to the two photon absorption), (ii) optical rectification for detection and energy harvesting of infrared and visible light, which are related to the relevant second-order quantum conductivity, (iii) harmonic sensing for the work function and the optical index of nanoparticle, e.g. DNA and molecules, loaded inside the nanogap, and (iv) high harmonic generation and wave mixing with nonlinear quantum conductivities.

Fabrication of hydrogel-coated single conical nanochannels exhibiting controllable ion rectification characteristics.

Science.gov (United States)

Wang, Linlin; Zhang, Huacheng; Yang, Zhe; Zhou, Jianjun; Wen, Liping; Li, Lin; Jiang, Lei

2015-03-07

Heterogeneous nanochannel materials that endow new functionalities different to the intrinsic properties of two original nanoporous materials have wide potential applications in nanofluidics, energy conversion, and biosensors. Herein, we report novel, interesting hydrogel-composited nanochannel devices with regulatable ion rectification characteristics. The heterogeneous nanochannel devices were constructed by selectively coating the tip side, base side, or both sides of a single conical nanochannel membrane with thin agar hydrogel layers. The tunable ion current rectification of the nanochannels in the three different coating states was systematically demonstrated by current-voltage (I-V) curves. The asymmetric ionic transport property of the conical nanochannel was further strengthened in the tip-coating state and weakened in the base-coating state, whereas the conical nanochannel showed nearly symmetric ionic transport in the dual-coating state. Repeated experiments presented insight into the good stability and reversibility of the three coating states of the hydrogel-nanochannel-integrated systems. This work, as an example, may provide a new strategy to further design and develop multifunctional gel-nanochannel heterogeneous smart porous nanomaterials.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

International Nuclear Information System (INIS)

Eslami, L.; Faizabadi, E.

2014-01-01

The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Fragility of the fractional quantum spin Hall effect in quantum gases

International Nuclear Information System (INIS)

Fialko, O; Brand, J; Zülicke, U

2014-01-01

We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle motion to the lowest Landau level. While interaction between same-spin particles leads to incompressible correlated states at fractional filling factors as known from the fractional quantum Hall effect, these states are destabilized by interactions between opposite spin particles. Exact results for two particles with opposite spin reveal a quasi-continuous spectrum of extended states with a large density of states at low energy. This has implications for the prospects of realizing the fractional quantum spin Hall effect in electronic or ultra-cold atom systems. Numerical diagonalization is used to extend the two-particle results to many bosonic particles and trapped systems. The interplay between an external trapping potential and spin-dependent interactions is shown to open up new possibilities for engineering exotic correlated many-particle states with ultra-cold atoms. (paper)

Simulating realistic implementations of spin field effect transistor

Science.gov (United States)

Gao, Yunfei; Lundstrom, Mark S.; Nikonov, Dmitri E.

2011-04-01

The spin field effect transistor (spinFET), consisting of two ferromagnetic source/drain contacts and a Si channel, is predicted to have outstanding device and circuit performance. We carry out a rigorous numerical simulation of the spinFET based on the nonequilibrium Green's function formalism self-consistently coupled with a Poisson solver to produce the device I-V characteristics. Good agreement with the recent experiments in terms of spin injection, spin transport, and the magnetoresistance ratio (MR) is obtained. We include factors crucial for realistic devices: tunneling through a dielectric barrier, and spin relaxation at the interface and in the channel. Using these simulations, we suggest ways of optimizing the device. We propose that by choosing the right contact material and inserting tunnel oxide barriers between the source/drain and channel to filter different spins, the MR can be restored to ˜2000%, which would be beneficial to the reconfigurable logic circuit application.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Thermoelectric effects and spin injection into superconductors with exchange field

Energy Technology Data Exchange (ETDEWEB)

Heikkilae, Tero [Dept. Phys., Univ. Jyvaeskylae (Finland); Silaev, Mihail [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Dept. Theor. Physics, KTH, Stockholm (Sweden); Virtanen, Pauli [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Giazotto, Francesco [NEST CNR-INFM and SNS Pisa (Italy); Ozaeta, Asier; Bergeret, Sebastian [CFM-CSIC and DIPC, San Sebastian (Spain)

2015-07-01

When a thin superconducting film is exposed to a longitudinal magnetic field or is in proximity to a ferromagnet, an exchange field separating the spin bands emerges in it. For low enough exchange fields superconductivity survives, but its response to external driving is strongly modified. In my talk I will show how at linear response such systems exhibit very strong thermoelectric response with an almost ideal efficiency. For strong driving, this effect creates a spin accumulation that can only relax via thermalization, and therefore at low temperatures has a very long range. Therefore our work explains recent observations of the long-range spin accumulation in spin-split superconductors. When injecting spin from injectors with non-collinear magnetization compared to the exchange field, the spins start to rotate around the latter. I will describe how superconductivity modifies this spin Hanle effect so that the resulting nonlocal magnetoresistance depends on the details of spin relaxation, therefore allowing for probing them.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam

2017-05-11

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam; McNellis, Erik R.; Nielsen, Christian B.; Chen, Hung-Yang; Watanabe, Shun; Tanaka, Hisaaki; McCulloch, Iain; Takimiya, Kazuo; Sinova, Jairo; Sirringhaus, Henning

2017-01-01

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Strong spin-filtering and spin-valve effects in a molecular V-C-60-V contact

DEFF Research Database (Denmark)

Koleini, Mohammad; Brandbyge, Mads

2012-01-01

Motivated by the recent achievements in the manipulation of C-60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C-60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface using first-principles calculations....... For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C-60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%). Moreover, we find a significant change...... in the conductance between parallel and anti-parallel spin polarizations in the junction (86%) which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems....

Magnetization rotation or generation of incoherent spin waves? Suggestions for a spin-transfer effect experiment

International Nuclear Information System (INIS)

Bazaliy, Y. B.; Jones, B. A.

2002-01-01

''Spin-transfer'' torque is created when electric current is passed through metallic ferromagnets and may have interesting applications in spintronics. So far it was experimentally studied in ''collinear'' geometries, where it is difficult to predict whether magnetization will coherently rotate or spin-waves will be generated. Here we propose an easy modification of existing experiment in which the spin-polarization of incoming current will no longer be collinear with magnetization and recalculate the switching behavior of the device. We expect that a better agreement with the magnetization rotation theory will be achieved. That can be an important step in reconciling alternative points of view on the effect of spin-transfer torque

Sequential Vapor Infiltration Treatment Enhances the Ionic Current Rectification Performance of Composite Membranes Based on Mesoporous Silica Confined in Anodic Alumina.

Science.gov (United States)

Liang, Yanyan; Liu, Zhengping

2016-12-20

Ionic current rectification of nanofluidic diode membranes has been studied widely in recent years because it is analogous to the functionality of biological ion channels in principle. We report a new method to fabricate ionic current rectification membranes based on mesoporous silica confined in anodic aluminum oxide (AAO) membranes. Two types of mesostructured silica nanocomposites, hexagonal structure and nanoparticle stacked structure, were used to asymmetrically fill nanochannels of AAO membranes by a vapor-phase synthesis (VPS) method with aspiration approach and were further modified via sequence vapor infiltration (SVI) treatment. The ionic current measurements indicated that SVI treatment can modulate the asymmetric ionic transport in prepared membranes, which exhibited clear ionic current rectification phenomenon under optimal conditions. The ionic current rectifying behavior is derived from the asymmetry of surface conformations, silica species components, and hydrophobic wettability, which are created by the asymmetrical filling type, silica depositions on the heterogeneous membranes, and the condensation of silanol groups. This article provides a considerable strategy to fabricate composite membranes with obvious ionic current rectification performance via the cooperation of the VPS method and SVI treatment and opens up the potential of mesoporous silica confined in AAO membranes to mimic fluid transport in biological processes.

Quasiparticle-mediated spin Hall effect in a superconductor.

Science.gov (United States)

Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

2015-07-01

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

Effective Hamiltonian for 2-dimensional arbitrary spin Ising model

International Nuclear Information System (INIS)

Sznajd, J.; Polska Akademia Nauk, Wroclaw. Inst. Niskich Temperatur i Badan Strukturalnych)

1983-08-01

The method of the reduction of the generalized arbitrary-spin 2-dimensional Ising model to spin-half Ising model is presented. The method is demonstrated in detail by calculating the effective interaction constants to the third order in cumulant expansion for the triangular spin-1 Ising model (the Blume-Emery-Griffiths model). (author)

Nontrivial ac spin response in the effective Luttinger model

International Nuclear Information System (INIS)

Hu Liangbin; Zhong Jiansong; Hu Kaige

2006-01-01

Based on the three-dimensional effective Luttinger Hamiltonian and the exact Heisenberg equations of motion and within a self-consistent semiclassical approximation, we present a theoretical investigation on the nontrivial ac spin responses due to the intrinsic spin-orbit coupling of holes in p-doped bulk semiconductors. We show that the nontrivial ac spin responses induced by the combined action of an ac external electric field and the intrinsic spin-orbit coupling of holes may lead to the generation of a nonvanishing ac spin Hall current in a p-doped bulk semiconductor, which shares some similarities with the dissipationless dc spin Hall current conceived previously and also exhibits some interesting new features that was not found before

Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.; Wan, C.H., E-mail: wancaihua@iphy.ac.cn; Yuan, Z.H.; Fang, C.; Kong, W.J.; Wu, H.; Zhang, Q.T.; Tao, B.S.; Han, X.F., E-mail: xfhan@iphy.ac.cn

2017-04-15

Confronting with the gigantic volume of data produced every day, raising integration density by reducing the size of devices becomes harder and harder to meet the ever-increasing demand for high-performance computers. One feasible path is to actualize more logic functions in one cell. In this respect, we experimentally demonstrate a prototype spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR). The cell can be easily programmed and reprogrammed to perform desired function. Furthermore, the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells. This work provides a prospective example of multi-functional spin logic cell with reprogrammability and nonvolatility, which will advance the application of spin logic devices. - Highlights: • Experimental demonstration of spin logic cell based on spin Hall effect. • Five logic functions are realized in a single logic cell. • The logic cell is reprogrammable. • Information in the cell is symmetry-protected. • The logic cell can be easily expanded to logic gate array.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Science.gov (United States)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Datta-Das-type spin-field-effect transistor in the nonballistic regime

OpenAIRE

Ohno, Munekazu; Yoh, Kanji

2008-01-01

We analyzed the applicability of original Datta-Das proposal for spin-field-effect transistor (spin-FET) to nonballistic regime based on semiempirical Monte Carlo simulation for spin transport. It is demonstrated that the spin helix state in two-dimensional electron gas system is sufficiently robust against D'yakonov-Perel' spin relaxation to allow an operation of Datta-Das-type spin-FET in the nonballistic transport regime. It is also shown that the spin diffusion length of the spin helix st...

Ion current rectification, limiting and overlimiting conductances in nanopores.

Directory of Open Access Journals (Sweden)

Liesbeth van Oeffelen

Full Text Available Previous reports on Poisson-Nernst-Planck (PNP simulations of solid-state nanopores have focused on steady state behaviour under simplified boundary conditions. These are Neumann boundary conditions for the voltage at the pore walls, and in some cases also Donnan equilibrium boundary conditions for concentrations and voltages at both entrances of the nanopore. In this paper, we report time-dependent and steady state PNP simulations under less restrictive boundary conditions, including Neumann boundary conditions applied throughout the membrane relatively far away from the nanopore. We simulated ion currents through cylindrical and conical nanopores with several surface charge configurations, studying the spatial and temporal dependence of the currents contributed by each ion species. This revealed that, due to slow co-diffusion of oppositely charged ions, steady state is generally not reached in simulations or in practice. Furthermore, it is shown that ion concentration polarization is responsible for the observed limiting conductances and ion current rectification in nanopores with asymmetric surface charges or shapes. Hence, after more than a decade of collective research attempting to understand the nature of ion current rectification in solid-state nanopores, a relatively intuitive model is retrieved. Moreover, we measured and simulated current-voltage characteristics of rectifying silicon nitride nanopores presenting overlimiting conductances. The similarity between measurement and simulation shows that overlimiting conductances can result from the increased conductance of the electric double-layer at the membrane surface at the depletion side due to voltage-induced polarization charges. The MATLAB source code of the simulation software is available via the website http://micr.vub.ac.be.

Minimal model of spin-transfer torque and spin pumping caused by the spin Hall Effect

Czech Academy of Sciences Publication Activity Database

Chen, W.; Sigrist, M.; Sinova, Jairo; Manske, D.

2016-01-01

Roč. 115, č. 21 (2016), 1-5, č. článku 217203. ISSN 0031-9007 Institutional support: RVO:68378271 Keywords : spintronics * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016

Theory of spin Hall effect

OpenAIRE

Chudnovsky, Eugene M.

2007-01-01

An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The expression for spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, spin Hall conductivity $\\sigma_s$ and charge conductivity $\\sigma_c$ are related through $\\sigma_s = [2 \\pi \\hbar...

Leading order finite size effects with spins for inspiralling compact binaries

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Université Pierre et Marie Curie-Paris VI, CNRS-UMR 7095, Institut d’Astrophysique de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Sorbonne Universités, Institut Lagrange de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan [Max-Planck-Institute for Gravitational Physics - Albert-Einstein-Institute,Am Mühlenberg 1, 14476 Potsdam-Golm (Germany); Centro Multidisciplinar de Astrofisica, Instituto Superior Tecnico, Universidade de Lisboa,Avenida Rovisco Pais 1, 1049-001 Lisboa (Portugal)

2015-06-10

The leading order finite size effects due to spin, namely that of the cubic and quartic in spin interactions, are derived for the first time for generic compact binaries via the effective field theory for gravitating spinning objects. These corrections enter at the third and a half and fourth post-Newtonian orders, respectively, for rapidly rotating compact objects. Hence, we complete the leading order finite size effects with spin up to the fourth post-Newtonian accuracy. We arrive at this by augmenting the point particle effective action with new higher dimensional nonminimal coupling worldline operators, involving higher-order derivatives of the gravitational field, and introducing new Wilson coefficients, corresponding to constants, which describe the octupole and hexadecapole deformations of the object due to spin. These Wilson coefficients are fixed to unity in the black hole case. The nonminimal coupling worldline operators enter the action with the electric and magnetic components of the Weyl tensor of even and odd parity, coupled to even and odd worldline spin tensors, respectively. Moreover, the non relativistic gravitational field decomposition, which we employ, demonstrates a coupling hierarchy of the gravito-magnetic vector and the Newtonian scalar, to the odd and even in spin operators, respectively, which extends that of minimal coupling. This observation is useful for the construction of the Feynman diagrams, and provides an instructive analogy between the leading order spin-orbit and cubic in spin interactions, and between the leading order quadratic and quartic in spin interactions.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

International Nuclear Information System (INIS)

Wu, Fengjun; Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen; Cui, Yuan; Yan, Hongbin; Zhang, Huajian; Wang, Bin; Li, Xiaohui

2016-01-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply. - Highlights: • Applying SVPWM rectification technology in an accelerator power supply improves its grid-side performance. • New Topology and its control strategies make an accelerator power supply have bidirectional power flow ability. • Hardware and software of controller provide a good reference for design of this new type of power supply.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

Energy Technology Data Exchange (ETDEWEB)

Wu, Fengjun, E-mail: wufengjun@impcas.ac.cn [Institute of Modern Physics, CAS, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen [Institute of Modern Physics, CAS, Lanzhou 730000 (China); Cui, Yuan [Institute of Modern Physics, CAS, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yan, Hongbin [Institute of Modern Physics, CAS, Lanzhou 730000 (China); Zhang, Huajian [Institute of Modern Physics, CAS, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Bin [University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Xiaohui [Institute of Modern Physics, CAS, Lanzhou 730000 (China)

2016-08-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply. - Highlights: • Applying SVPWM rectification technology in an accelerator power supply improves its grid-side performance. • New Topology and its control strategies make an accelerator power supply have bidirectional power flow ability. • Hardware and software of controller provide a good reference for design of this new type of power supply.

Influence of Magnetic Field on the Rectification Process of Binary Heterogeneous Azeotrope

Institute of Scientific and Technical Information of China (English)

JIA Shaoyi; WU Songhai; LI Zhen; JIA Liang

2005-01-01

To improve separate effect of binary heterogeneous azeotrope in the magnetic field with different magnetic induction intensity, the influence of magnetic field on the rectification process of binary heterogeneous azeotrope was investigated with 1-butanol-water system. The results show that the composition of liquid-liquid phase equilibrium of 1-butanol-water system has definitely changed, the composition of 1-butanol in light phase (1-butanol layer) increases by 1.17%-1.63% and the composition of water in heavy phase (water layer) increases by 1.21%-1.58% under the influence of magnetic field. By separation of magnetization, the composition of 1-butanol increases by 0.8%-1.2% and the recovery ratio of 1-butanol increases by 1.6%-2.5%. Magnetic field has positive effect, however, the magnetized effect is not in proportion to magnetic induction intensity and has an optimum condition, in the range of 0.25 T-0.3 T.

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

Study of thermal conductivity and thermal rectification in exponential mass graded lattices

Energy Technology Data Exchange (ETDEWEB)

Shah, Tejal N. [Bhavan' s Sheth R.A. College of Science, Khanpur, Ahmedabad 380 001, Gujarat (India); Gajjar, P.N., E-mail: pngajjar@rediffmail.com [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380 009, Gujarat (India)

2012-01-09

Concept of exponential mass variation of oscillators along the chain length of N oscillators is proposed in the present Letter. The temperature profile and thermal conductivity of one-dimensional (1D) exponential mass graded harmonic and anharmonic lattices are studied on the basis of Fermi–Pasta–Ulam (FPU) β model. Present findings conclude that the exponential mass graded chain provide higher conductivity than that of linear mass graded chain. The exponential mass graded anharmonic chain generates the thermal rectification of 70–75% which is better than linear mass graded materials, so far. Thus instead of using linear mass graded material, the use of exponential mass graded material will be a better and genuine choice for controlling the heat flow at nano-scale. -- Highlights: ► In PRE 82 (2010) 040101, use of mass graded material as a thermal devices is explored. ► Concept of exponential mass graded material is proposed. ► The rectification obtained is about 70–75% which is better than linear mass graded materials. ► The exponential mass graded material will be a better choice for the thermal devices at nano-scale.

Spin Hall Effect in Doped Semiconductor Structures

Science.gov (United States)

Tse, Wang-Kong; Das Sarma, Sankar

2006-03-01

We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator.

Science.gov (United States)

Chen, Haoqi; Li, Bin; Yang, Jinlong

2017-11-08

Black phosphorus is a promising candidate for future nanoelectronics with a moderate electronic band gap and a high carrier mobility. Introducing the magnetism into black phosphorus will widely expand its application scope and may present a bright prospect in spintronic nanodevices. Here, we report our first-principles calculations of spin-polarized electronic structure of monolayer black phosphorus (phosphorene) adsorbed on a magnetic europium oxide (EuO) substrate. Effective spin injection into the phosphorene is realized by means of interaction with the nearby EuO(111) surface, i.e., proximity effect, which results in spin-polarized electrons in the 3p orbitals of phosphorene, with the spin polarization at Fermi level beyond 30%, together with an exchange-splitting energy of ∼0.184 eV for conduction-band minimum of the adsorbed phosphorene corresponding to an energy region where only one spin channel is conductive. The energy region of these exchange-splitting and spin-polarized band gaps of the adsorbed phosphorene can be effectively modulated by in-plane strain. Intrinsically high and anisotropic carrier mobilities at the conduction-band minimum of the phosphorene also become spin-polarized mainly due to spin polarization of deformation potentials and are not depressed significantly after the adsorption. These extraordinary properties would endow black phosphorus with great potentials in the future spintronic nanodevices.

Spin imbalance effect on the Larkin-Ovchinnikov-Fulde-Ferrel state

International Nuclear Information System (INIS)

Yoshii, Ryosuke; Tsuchiya, Shunji; Marmorini, Giacomo; Nitta, Muneto

2011-01-01

We study spin imbalance effects on the Larkin-Ovchinnikov-Fulde-Ferrel (LOFF) state relevant for superconductors under a strong magnetic field and spin polarized ultracold Fermi gas. We obtain the exact solution for the condensates with arbitrary spin imbalance and the fermion spectrum perturbatively in the presence of small spin imbalance. We also obtain fermion zero mode exactly without perturbation theory.

Drones, quasi-spin or iso-spin. A comparison of many-body techniques for general spin

International Nuclear Information System (INIS)

McKenzie, B.J.; Stedman, G.E.

1976-01-01

For an effective-spin system with 2S + 1 levels there are a number of possible mappings of spin onto pseudo-fermion operators. The relative merits of three of these methods are investigated by calculating to second order the dispersion relation for coupled spin-phonon modes in crystals containing S = 1 effective spin impurities. It is found that the drone formalism quickly becomes intractable at higher spin values, as does the related quasi-spin formalism developed in contrast with the iso-spin (or Abrinkosov projection) formalism. (author)

Surface-environment effects in spin crossover solids

Energy Technology Data Exchange (ETDEWEB)

Gudyma, Iu., E-mail: yugudyma@gmail.com; Maksymov, A.

2017-06-15

Highlights: • The spin-crossover nanocrystals were described by modified Ising-like model. • The ligand field on the surface is a function of external fluctuations. • The thermal hysteresis with surface and bulk interactions of the lattice was studied. • The system behavior with fluctuating ligand field on the surface was examined. • The fluctuations enlarge the hysteresis, but smaller surface interaction narrows it. - Abstract: The impact of surface effects on thermal induced spin crossover phenomenon is a subject of a broad and current interest. Using the modified Ising-like model of spin crossover solids with the ligand field as function of the molecule’ positions and random component on surface by means of Metropolis Monte Carlo algorithm the thermal spin transition curves were calculated. The analysis of spin configuration during transition gives a general idea about contribution of molecules from the surface and inside the lattice into resulting magnetization of the systems. The behavior of hysteresis loop for various surface coupling and fluctuations strength has been described.

Theory of the Spin Galvanic Effect at Oxide Interfaces

Science.gov (United States)

Seibold, Götz; Caprara, Sergio; Grilli, Marco; Raimondi, Roberto

2017-12-01

The spin galvanic effect (SGE) describes the conversion of a nonequilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO3 and SrTiO3 . Here, we analyze the SGE for oxide interfaces within a three-band model for the Ti t2 g orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to providing an appropriate description of the experimental data.

Antiferromagnetic spin phase transition in nuclear matter with effective Gogny interaction

International Nuclear Information System (INIS)

Isayev, A.A.; Yang, J.

2004-01-01

The possibility of ferromagnetic and antiferromagnetic phase transitions in symmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with the effective Gogny interaction. It is shown that at some critical density nuclear matter with the D1S effective force undergoes a phase transition to the antiferromagnetic spin state (opposite directions of neutron and proton spins). The self-consistent equations of spin polarized nuclear matter with the D1S force have no solutions corresponding to ferromagnetic spin ordering (the same direction of neutron and proton spins) and, hence, the ferromagnetic transition does not appear. The dependence of the antiferromagnetic spin polarization parameter as a function of density is found at zero temperature

Magnetic Nanostructures Spin Dynamics and Spin Transport

CERN Document Server

Farle, Michael

2013-01-01

Nanomagnetism and spintronics is a rapidly expanding and increasingly important field of research with many applications already on the market and many more to be expected in the near future. This field started in the mid-1980s with the discovery of the GMR effect, recently awarded with the Nobel prize to Albert Fert and Peter Grünberg. The present volume covers the most important and most timely aspects of magnetic heterostructures, including spin torque effects, spin injection, spin transport, spin fluctuations, proximity effects, and electrical control of spin valves. The chapters are written by internationally recognized experts in their respective fields and provide an overview of the latest status.

Strong spin-filtering and spin-valve effects in a molecular V–C60–V contact

Directory of Open Access Journals (Sweden)

Mohammad Koleini

2012-08-01

Full Text Available Motivated by the recent achievements in the manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111 surface using first-principles calculations. For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%. Moreover, we find a significant change in the conductance between parallel and anti-parallel spin polarizations in the junction (86% which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems.

Nonlinear optical rectification and optical absorption in GaAs-Ga1-xAlxAs asymmetric double quantum wells: Combined effects of applied electric and magnetic fields and hydrostatic pressure

International Nuclear Information System (INIS)

Karabulut, I.; Mora-Ramos, M.E.; Duque, C.A.

2011-01-01

The intersubband electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As asymmetric double quantum wells are studied, under the influence of combined or independent applied electric and magnetic fields as well as hydrostatic pressure. The outcome of the density matrix formalism and the effective mass, and parabolic-band approximations have been considered as main theoretical tools for the description. It is obtained that under particular geometrical conditions, with or without electric and/or magnetic field strength, the optical rectification is null and, simultaneously, in such circumstances the optical absorption has a relative maximum. It is also detected that the influence of the hydrostatic pressure leads to increasing or decreasing behaviors of the nonlinear optical absorption in dependence of the particular regime of pressure values considered, with significant distinction of the cases of opposite electric field orientations. - Highlights: → Maxima of the NOA correspond to zero in the NOR. → Electric fields can couple the double quantum wells. → Hydrostatic pressure can couple the double quantum wells. → NOA can increase/decrease with hydrostatic pressure. → Overlap between wave functions depends on the magnetic field.

Spin-torsion effects in the hyperfine structure of methanol

International Nuclear Information System (INIS)

Coudert, L. H.; Gutlé, C.; Huet, T. R.; Grabow, J.-U.; Levshakov, S. A.

2015-01-01

The magnetic hyperfine structure of the non-rigid methanol molecule is investigated experimentally and theoretically. 12 hyperfine patterns are recorded using molecular beam microwave spectrometers. These patterns, along with previously recorded ones, are analyzed in an attempt to evidence the effects of the magnetic spin-torsion coupling due to the large amplitude internal rotation of the methyl group [J. E. M. Heuvel and A. Dymanus, J. Mol. Spectrosc. 47, 363 (1973)]. The theoretical approach setup to analyze the observed data accounts for this spin-torsion in addition to the familiar magnetic spin-rotation and spin-spin interactions. The theoretical approach relies on symmetry considerations to build a hyperfine coupling Hamiltonian and spin-rotation-torsion wavefunctions compatible with the Pauli exclusion principle. Although all experimental hyperfine patterns are not fully resolved, the line position analysis yields values for several parameters including one describing the spin-torsion coupling

Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

International Nuclear Information System (INIS)

Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

2007-01-01

Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

Heat and spin interconversion

International Nuclear Information System (INIS)

Ohnuma, Yuichi; Matsuo, Mamoru; Maekawa, Sadamichi; Saitoh, Eeiji

2017-01-01

Spin Seebeck and spin Peltier effects, which are mutual conversion phenomena of heat and spin, are discussed on the basis of the microscopic theory. First, the spin Seebeck effect, which is the spin-current generation due to heat current, is discussed. The recent progress in research on the spin Seebeck effect are introduced. We explain the origin of the observed sign changes of the spin Seebeck effect in compensated ferromagnets. Next, the spin Peltier effect, which is the heat-current generation due to spin current, is discussed. Finally, we show that the spin Seebeck and spin Peltier effects are summarized by Onsager's reciprocal relation and derive Kelvin's relation for the spin and heat transports. (author)

Quantum dust magnetosonic waves with spin and exchange correlation effects

Energy Technology Data Exchange (ETDEWEB)

Maroof, R.; Qamar, A. [Department of Physics, University of Peshawar, Peshawar 25000 (Pakistan); Mushtaq, A. [Department of Physics, Abdul Wali Khan University, Mardan 23200 (Pakistan); National Center for Physics, Shahdra Valley Road, Islamabad 44000 (Pakistan)

2016-01-15

Dust magnetosonic waves are studied in degenerate dusty plasmas with spin and exchange correlation effects. Using the fluid equations of magnetoplasma with quantum corrections due to the Bohm potential, temperature degeneracy, spin magnetization energy, and exchange correlation, a generalized dispersion relation is derived. Spin effects are incorporated via spin force and macroscopic spin magnetization current. The exchange-correlation potentials are used, based on the adiabatic local-density approximation, and can be described as a function of the electron density. For three different values of angle, the dispersion relation is reduced to three different modes under the low frequency magnetohydrodynamic assumptions. It is found that the effects of quantum corrections in the presence of dust concentration significantly modify the dispersive properties of these modes. The results are useful for understanding numerous collective phenomena in quantum plasmas, such as those in compact astrophysical objects (e.g., the cores of white dwarf stars and giant planets) and in plasma-assisted nanotechnology (e.g., quantum diodes, quantum free-electron lasers, etc.)

Quantum dust magnetosonic waves with spin and exchange correlation effects

Science.gov (United States)

Maroof, R.; Mushtaq, A.; Qamar, A.

2016-01-01

Dust magnetosonic waves are studied in degenerate dusty plasmas with spin and exchange correlation effects. Using the fluid equations of magnetoplasma with quantum corrections due to the Bohm potential, temperature degeneracy, spin magnetization energy, and exchange correlation, a generalized dispersion relation is derived. Spin effects are incorporated via spin force and macroscopic spin magnetization current. The exchange-correlation potentials are used, based on the adiabatic local-density approximation, and can be described as a function of the electron density. For three different values of angle, the dispersion relation is reduced to three different modes under the low frequency magnetohydrodynamic assumptions. It is found that the effects of quantum corrections in the presence of dust concentration significantly modify the dispersive properties of these modes. The results are useful for understanding numerous collective phenomena in quantum plasmas, such as those in compact astrophysical objects (e.g., the cores of white dwarf stars and giant planets) and in plasma-assisted nanotechnology (e.g., quantum diodes, quantum free-electron lasers, etc.).

Carbohydrate-actuated nanofluidic diode: switchable current rectification in a nanopipette.

Science.gov (United States)

Vilozny, Boaz; Wollenberg, Alexander L; Actis, Paolo; Hwang, Daniel; Singaram, Bakthan; Pourmand, Nader

2013-10-07

Nanofluidic structures share many properties with ligand-gated ion channels. However, actuating ion conductance in artificial systems is a challenge. We have designed a system that uses a carbohydrate-responsive polymer to modulate ion conductance in a quartz nanopipette. The cationic polymer, a poly(vinylpyridine) quaternized with benzylboronic acid groups, undergoes a transition from swollen to collapsed upon binding to monosaccharides. As a result, the current rectification in nanopipettes can be reversibly switched depending on the concentration of monosaccharides. Such molecular actuation of nanofluidic conductance may be used in novel sensors and drug delivery systems.

Spin-orbit and spin-lattice coupling

International Nuclear Information System (INIS)

Bauer, Gerrit E.W.; Ziman, Timothy; Mori, Michiyasu

2014-01-01

We pursued theoretical research on the coupling of electron spins in the condensed matter to the lattice as mediated by the spin-orbit interaction with special focus on the spin and anomalous Hall effects. (author)

Neutron beam effects on spin-exchange-polarized 3He.

Science.gov (United States)

Sharma, M; Babcock, E; Andersen, K H; Barrón-Palos, L; Becker, M; Boag, S; Chen, W C; Chupp, T E; Danagoulian, A; Gentile, T R; Klein, A; Penttila, S; Petoukhov, A; Soldner, T; Tardiff, E R; Walker, T G; Wilburn, W S

2008-08-22

We have observed depolarization effects when high intensity cold neutron beams are incident on alkali-metal spin-exchange-polarized 3He cells used as neutron spin filters. This was first observed as a reduction of the maximum attainable 3He polarization and was attributed to a decrease of alkali-metal polarization, which led us to directly measure alkali-metal polarization and spin relaxation over a range of neutron fluxes at Los Alamos Neutron Science Center and Institute Laue-Langevin. The data reveal a new alkali-metal spin-relaxation mechanism that approximately scales as sqrt[phi_{n}], where phi_{n} is the neutron capture-flux density incident on the cell. This is consistent with an effect proportional to the concentration of electron-ion pairs but is much larger than expected from earlier work.

Analytical theory and possible detection of the ac quantum spin Hall effect.

Science.gov (United States)

Deng, W Y; Ren, Y J; Lin, Z X; Shen, R; Sheng, L; Sheng, D N; Xing, D Y

2017-07-11

We develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

International Nuclear Information System (INIS)

Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

2007-01-01

Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

KAUST Repository

Danon, Jeroen

2013-08-06

Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

Pauli Spin Blockade and the Ultrasmall Magnetic Field Effect

KAUST Repository

Danon, Jeroen; Wang, Xuhui; Manchon, Aurelien

2013-01-01

Based on the spin-blockade model for organic magnetoresistance, we present an analytic expression for the polaron-bipolaron transition rate, taking into account the effective nuclear fields on the two sites. We reveal the physics behind the qualitatively different magnetoconductance line shapes observed in experiment, as well as the ultrasmall magnetic field effect (USFE). Since our findings agree in detail with recent experiments, they also indirectly provide support for the spin-blockade interpretation of organic magnetoresistance. In addition, we predict the existence of a similar USFE in semiconductor double quantum dots tuned to the spin-blockade regime.

Interannual Variability In the Atmospheric CO2 Rectification Over Boreal Forests Based On A Coupled Ecosystem-Atmosphere Model

Science.gov (United States)

Chen, B.; Chen, J. M.; Worthy, D.

2004-05-01

Ecosystem CO2 exchange and the planetary boundary layer (PBL) are correlated diurnally and seasonally. The simulation of this atmospheric rectifier effect is important in understanding the global CO2 distribution pattern. A 12-year (1990-1996, 1999-2003), continuous CO2 measurement record from Fraserdale, Ontario (located ~150 km north of Timmons), along with a coupled Vertical Diffusion Scheme (VDS) and ecosystem model (Boreal Ecosystem Productivity Simulator, BEPS), is used to investigate the interannual variability in this effect over a boreal forest region. The coupled model performed well in simulating CO2 vertical diffusion processes. Simulated annual atmospheric rectifier effects, (including seasonal and diurnal), quantified as the variation in the mean CO2 concentration from the surface to the top of the PBL, varied from 2.8 to 4.1 ppm, even though the modeled seasonal variations in the PBL depth were similar throughout the 12-year period. The differences in the interannual rectifier effect primarily resulted from changes in the biospheric CO2 uptake and heterotrophic respiration. Correlations in the year-to year variations of the CO2 rectification were found with mean annual air temperatures, simulated gross primary productivity (GPP) and heterotrophic respiration (Rh) (r2=0.5, 0.46, 0.42, respectively). A small increasing trend in the CO2 rectification was also observed. The year-to-year variation in the vertical distribution of the monthly mean CO2 mixing ratios (reflecting differences in the diurnal rectifier effect) was related to interannual climate variability, however, the seasonal rectifier effects were found to be more sensitive to climate variability than the diurnal rectifier effects.

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Krishtopenko, S. S.

2015-01-01

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

Energy Technology Data Exchange (ETDEWEB)

Krishtopenko, S. S., E-mail: sergey.krishtopenko@mail.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-02-15

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system.

Effect of spin disorder on resistivity; Effet du desordre de spin sur la resistivite

Energy Technology Data Exchange (ETDEWEB)

Gennes, P.G. de [Commissariat a l' Energie Atomique, Saclay (France); Friedel, J [Faculte des Sciences de Paris, 75 (France)

1959-07-01

The resistivity of magnetic metals is studied in the case where the spin carriers are bound to the atoms (ex.: rare earths). The effect of short-range order is shown to be generally small even at the critical point. The inelasticity of the magnetic collisions between electrons and lattice can also be neglected, but this approximation becomes bad at low temperatures. In this region a spin-wave approximation is used. (author) [French] On etudie l'influence des phenomenes magnetiques sur la resistivite des metaux ou les porteurs de spin sont lies aux atomes (ex.: Terres rares). Une bonne approximation a temperature suffisamment elevee consiste a negliger l'ordre a courte distance et l'inelasticite des collisions magnetiques electrons-reseau. On montre que l'effet de l'ordre a courte distance est en general negligeable meme a la temperature critique. L'approximation devient fausse a basse temperature et doit alors etre remplacee par l'approximation des ondes de spin. (auteur)

Spin valve effect in single-atom contacts

International Nuclear Information System (INIS)

Ziegler, M; Neel, N; Berndt, R; Lazo, C; Ferriani, P; Heinze, S; Kroeger, J

2011-01-01

Magnetic single-atom contacts have been controllably fabricated with a scanning tunnelling microscope. A voltage-dependent spin valve effect with conductance variations of ∼40% is reproducibly observed from contacts comprising a Cr-covered tip and Co and Cr atoms on ferromagnetic nanoscale islands on W(110) with opposite magnetization. The spin-dependent conductances are interpreted from first-principles calculations in terms of the orbital character of the relevant electronic states of the junction.

The susceptibilities in the spin-S Ising model

International Nuclear Information System (INIS)

Ainane, A.; Saber, M.

1995-08-01

The susceptibilities of the spin-S Ising model are evaluated using the effective field theory introduced by Tucker et al. for studying general spin-S Ising model. The susceptibilities are studied for all spin values from S = 1/2 to S = 5/2. (author). 12 refs, 4 figs

Topological Hall and Spin Hall Effects in Disordered Skyrmionic Textures

OpenAIRE

N'diaye, P. B.; Akosa, C. A.; Manchon, A.

2016-01-01

We carry out a throughout study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy band structure in the multiprobe Landauer-B\\"uttiker formalism and their link to the effective magnetic field emerging from the real space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and found that the adiabatic a...

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

International Nuclear Information System (INIS)

Kotsuki, Kenji; Tanaka, Hiroshige; Obata, Seiji; Stauss, Sven; Terashima, Kazuo; Saiki, Koichiro

2014-01-01

We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO 2 substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm 2 /V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

Spin-Mechatronics

Science.gov (United States)

Matsuo, Mamoru; Saitoh, Eiji; Maekawa, Sadamichi

2017-01-01

We investigate the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, the recent results on spin manipulation and spin-current generation by mechanical motion are examined. In accelerating systems, spin-dependent gauge fields emerge, which enable the conversion from mechanical angular momentum into spins. Such a spin-mechanical effect is predicted by quantum theory in a non-inertial frame. Experiments which confirm the effect, i.e., the resonance frequency shift in nuclear magnetic resonance, the stray field measurement of rotating metals, and electric voltage generation in liquid metals, are discussed.

Kir2.1 channels set two levels of resting membrane potential with inward rectification.

Science.gov (United States)

Chen, Kuihao; Zuo, Dongchuan; Liu, Zheng; Chen, Haijun

2018-04-01

Strong inward rectifier K + channels (Kir2.1) mediate background K + currents primarily responsible for maintenance of resting membrane potential. Multiple types of cells exhibit two levels of resting membrane potential. Kir2.1 and K2P1 currents counterbalance, partially accounting for the phenomenon of human cardiomyocytes in subphysiological extracellular K + concentrations or pathological hypokalemic conditions. The mechanism of how Kir2.1 channels contribute to the two levels of resting membrane potential in different types of cells is not well understood. Here we test the hypothesis that Kir2.1 channels set two levels of resting membrane potential with inward rectification. Under hypokalemic conditions, Kir2.1 currents counterbalance HCN2 or HCN4 cation currents in CHO cells that heterologously express both channels, generating N-shaped current-voltage relationships that cross the voltage axis three times and reconstituting two levels of resting membrane potential. Blockade of HCN channels eliminated the phenomenon in K2P1-deficient Kir2.1-expressing human cardiomyocytes derived from induced pluripotent stem cells or CHO cells expressing both Kir2.1 and HCN2 channels. Weakly inward rectifier Kir4.1 or inward rectification-deficient Kir2.1•E224G mutant channels do not set such two levels of resting membrane potential when co-expressed with HCN2 channels in CHO cells or when overexpressed in human cardiomyocytes derived from induced pluripotent stem cells. These findings demonstrate a common mechanism that Kir2.1 channels set two levels of resting membrane potential with inward rectification by balancing inward currents through different cation channels such as hyperpolarization-activated HCN channels or hypokalemia-induced K2P1 leak channels.

Rectification of harmonically oscillating magnetic fields in quarter circular Josephson junctions

International Nuclear Information System (INIS)

Shaju, P.D.; Kuriakose, V.C.

2003-01-01

A novel method for rectifying harmonically varying magnetic fields is demonstrated using fluxons in quarter circular Josephson junctions (JJs). A JJ with a quarter circular geometry terminated with a load resistor at one end is found to be capable of rectifying alternating fields when biased with a constant dc current. An external magnetic field applied parallel to the dielectric barrier of the junction interacts with the edges of the junction and make asymmetric boundary conditions. These asymmetric boundary conditions facilitate fluxon penetration under a dc bias from one end of the junction in alternate half cycles of the applied field. Thus effective rectification of the field can be achieved using quarter circular JJs. This unique phenomenon is specific to this geometry and can be exploited for making superconducting magnetic field rectifiers. This proposed device is expected to have important applications in millimeter and sub-millimeter radio wave astronomy

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

Science.gov (United States)

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Asteroid collisional history - Effects on sizes and spins

International Nuclear Information System (INIS)

Davis, D.R.; Weidenschilling, S.J.; Farinella, P.; Paolicchi, P.; Binzel, R.P.

1989-01-01

The effects of asteroid collisional history on sizes and spins of present-day objects are discussed. Collisional evolution studies indicate that collisions have altered the spin-rates of small bodies, but that the largest asteroids may have retained their primordial rotation rates. Most asteroids larger than 100 km diam have probably been shattered, but have gravitationally recaptured their fragments to form a rubble-pile structure. Large angular momentum asteroids appear to have Maclaurian spheroidal or Jacobi-ellipsoid-like shapes; some of them may have fissioned into binaries. An integrated size and spin collisional evolution model is presented, with two critical parameters: one which determines the spin rates for small fragments resulting from a shattering collision, and the other determines the fraction of impact angular momentum that is retained by the target. 36 refs

Effective Floquet Hamiltonian for spin I = 1 in magic angle spinning ...

Indian Academy of Sciences (India)

WINTEC

Floquet Hamiltonians; contact transformations in NMR; Spin-1 MAS NMR; effective Ham- iltonians. 1. Introduction. Solid state nuclear magnetic resonance spectroscopy is an important technique to study structures, dyna- mics and electric charge distribution around nuclei in solids. It is also more difficult to perform and ana-.

Effective electric and magnetic polarizabilities of pointlike spin-1/2 particles

OpenAIRE

Silenko, A. J.

2014-01-01

Effective electric and magnetic polarizabilities of pointlike spin-1/2 particles possesing an anomalous magnetic moment are calculated with the transformation of an initial Hamiltonian to the Foldy-Wouthuysen representation. Polarizabilities of spin-1/2 and spin-1 particles are compared.

Spin-orbit coupling effects in indium antimonide quantum well structures

Science.gov (United States)

Dedigama, Aruna Ruwan

Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V semiconductor heterostructures arise from two different inversion asymmetries namely bulk inversion asymmetry (BIA) and structural inversion asymmetry (SIA). BIA is due to the zinc-blende nature of this material which leads to the Dresselhaus spin splitting consisting of both linear and cubic in-plane wave vector terms. As its name implies SIA arises due to the asymmetry of the quantum well structure, this leads to the Rashba spin splitting term which is linear in wave vector. Although InSb has theoretically predicted large Dresselhaus (760 eVA3) and Rashba (523 eA 2) coefficients there has been relatively little experimental investigation of spin-orbit coefficients. Spin-orbit coefficients can be extracted from the beating patterns of Shubnikov--de Haas oscillations (SdH), for material like InSb it is hard to use this method due to the existence of large electron Lande g-facture. Therefore it is essential to use a low field magnetotransport technique such as weak antilocalization to extract spin-orbit parameters for InSb. The main focus of this thesis is to experimentally determine the spin-orbit parameters for both symmetrically and asymmetrically doped InSb/InxAl 1-xSb heterostructures. During this study attempts have been made to tune the Rashba spin-orbit coupling coefficient by using a back gate to change the carrier density of the samples. Dominant phase breaking mechanisms for InSb/InxAl1-xSb heterostructures have been identified by analyzing the temperature dependence of the phase breaking field from weak antilocalization measurements. Finally the strong spin-orbit effects on InSb/InxAl1-xSb heterostructures have been demonstrated with ballistic spin focusing devices.

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

OpenAIRE

Yu, Zhao-xian; Jiao, Zhi-yong

2003-01-01

In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-$\\pm1$, spin-0 and spin-$\\pm2$ exhibit the step structure under the external cosinusoidal magnetic field respectively, but there do not exist step structure among spin-$\\pm1$ and spin-$\\pm2$. The tunneling current among spin-$\\pm1$ and spin-$\\pm2$ may exhibit periodically oscillation behavior, but among spin-0 and spin-$\\p...

On the properties of nuclear matter with an excess of neutrons, spin-up neutrons and spin-up protons using effective nucleon-nucleon potential

International Nuclear Information System (INIS)

Hassan, M.Y.; Ramadan, S.

1978-01-01

The binding energy of nuclear matter with an excess of neutrons, with spin-up neutrons and spin-up protons (characterized by the corresponding parameters αsub(tau)=(N-Z)/A, αsub(n)=(N(up)-N(down))/A, and αsub(p)=(Z(up)-Z(down))/A) contains three symmetry energies: the isospin symmetry energy epsilon sub(tau), the spin symmetry energy epsilon sub(sigma) and the spin-isospin symmetry energy epsilon sub(sigma tau). These energies are calculated using velocity-dependent effective potential of s-wave interaction, which was developed by Dzhibuti and Mamasakhlisov. The spin, isospin and spin-isospin dependent parts of the single-particle potential in nuclear matter are also calculated using the same effective nucleon-nucleon potentials. The spin-spin part of the optical model potential is estimated. (author)

Spin Funneling for Enhanced Spin Injection into Ferromagnets

Science.gov (United States)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

International Nuclear Information System (INIS)

Yu Zhaoxian; Jiao Zhiyong

2004-01-01

In this Letter, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field, respectively, but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2 may exhibit periodically oscillation behavior, but among spin-0 and spin-±1, spin-0 and spin-±2, the tunneling currents exhibit irregular oscillation behavior

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

Science.gov (United States)

Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

2018-02-01

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

Spin Hall effect of a light beam in left-handed materials

International Nuclear Information System (INIS)

Luo Hailu; Wen Shuangchun; Shu Weixing; Tang Zhixiang; Zou Yanhong; Fan Dianyuan

2009-01-01

We establish a general propagation model to describe the spin Hall effect of light beam in left-handed materials (LHMs). A spin-dependent shift of the beam centroid perpendicular to the refractive index gradient for the light beam through an air-LHM interface is demonstrated. For a certain circularly polarized component, whether the transverse shift is positive or negative depends on the magnitude of the refractive index gradient. Very surprisingly, the spin Hall effect in the LHM is unreversed, although the sign of refractive index gradient is reversed. The physics underlying this counterintuitive effect is that the spin angular momentum of photons is unreversed. Further, we reveal that the angular shift in the LHM is reversed due to the negative diffraction. These findings provide alternative evidence for that the linear momentum of photons is reversed, while the spin angular momentum is unreversed in the LHM.

A Study of Environmental Effects on Galaxy Spin Using MaNGA Data

Science.gov (United States)

Lee, Jong Chul; Hwang, Ho Seong; Chung, Haeun

2018-03-01

We investigate environmental effects on galaxy spin using the recent public data of MaNGA integral field spectroscopic survey containing ˜2800 galaxies. We measure the spin parameter of 1830 galaxies through the analysis of two-dimensional stellar kinematic maps within the effective radii, and obtain their large- (background mass density from 20 nearby galaxies) and small-scale (distance to and morphology of the nearest neighbour galaxy) environmental parameters for 1529 and 1767 galaxies, respectively. We first examine the mass dependence of galaxy spin, and find that the spin parameter of early-type galaxies decreases with stellar mass at log (M*/M⊙) ≳ 10, consistent with the results from previous studies. We then divide the galaxies into three subsamples using their stellar masses to minimize the mass effects on galaxy spin. The spin parameters of galaxies in each subsample do not change with background mass density, but do change with distance to and morphology of the nearest neighbour. In particular, the spin parameter of late-type galaxies decreases as early-type neighbours approach within the virial radius. These results suggest that the large-scale environments hardly affect the galaxy spin, but the small-scale environments such as hydrodynamic galaxy-galaxy interactions can play a substantial role in determining galaxy spin.

Spin Hall effect by surface roughness

KAUST Repository

Zhou, Lingjun; Grigoryan, Vahram L.; Maekawa, Sadamichi; Wang, Xuhui; Xiao, Jiang

2015-01-01

induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

Spin analysis and new effects in reflectivity measurements

International Nuclear Information System (INIS)

Fermon, C.

1996-01-01

We present two new effects in polarized neutron reflectivity. We show that we have a non symmetric spin-flip signal in reflectivity measurements on magnetic films when the external field is not negligible. This phenomenon is due to different Larmor precessions for the two spin states and has to be taken into account in some experiments. The second effect is still not understood but we present results indicating that the specular reflection on a non magnetic surface can induce a neutron beam depolarization or rotation. (authors)

Rectification of Current Responds to Incorporation of Fullerenes into Mixed-Monolayers of Alkanethiolates in Tunneling Junctions

NARCIS (Netherlands)

Qiu, Li; Zhang, Yanxi; Krijger, Theodorus; Qiu, Xinkai; van 't Hof, Patrick; Hummelen, Jan; Chiechi, Ryan

2016-01-01

This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga–In (EGaIn) and Au conducting probe AFM (CP-AFM)

Effect of resistance feedback on spin torque-induced switching of nanomagnets

International Nuclear Information System (INIS)

Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

2009-01-01

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

Spin Seebeck effect in nanometer-thick YIG micro-fabricated strips

Directory of Open Access Journals (Sweden)

Martin Collet

2017-05-01

Full Text Available We have investigated the spin Seebeck effect (SSE generated by current induced-heating in ultra-thin yttrium iron garnet film (20 nm covered by an 8 nm thick Pt layer. By passing current in the Pt layer, an out-of-plane temperature gradient is established that, in turn, generates an out-of-equilibrium magnons population. The resulting pure spin current is detected using the inverse spin Hall effect (ISHE measured in the Pt electrode. A lock-in detection scheme is used to separate the SSE signal from other magneto-galvanic effect. Indeed, the SSE signal is obtained as the second harmonic voltage response, while spin Hall magnetoresistance (SMR is measured as the first harmonic response to the ac excitation current. Interestingly, the amplitude of the SSE in such thin YIG film is comparable to what has been reported for much thicker films.

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

Institute of Scientific and Technical Information of China (English)

赵云驰; 杨光; 董博闻; 王守国; 王超; 孙阳; 张静言; 于广华

2016-01-01

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current, respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.

Collisional spin-oriented Sherman function in electron-hole semiconductor plasmas: Landau damping effect

Science.gov (United States)

Lee, Myoung-Jae; Jung, Young-Dae

2018-04-01

The influence of Landau damping on the spin-oriented collisional asymmetry is investigated in electron-hole semiconductor plasmas. The analytical expressions of the spin-singlet and the spin-triplet scattering amplitudes as well as the spin-oriented asymmetry Sherman function are obtained as functions of the scattering angle, the Landau parameter, the effective Debye length, and the collision energy. It is found that the Landau damping effect enhances the spin-singlet and spin-triplet scattering amplitudes in the forward and back scattering domains, respectively. It is also found that the Sherman function increases with an increase in the Landau parameter. In addition, the spin-singlet scattering process is found to be dominant rather than the spin-triplet scattering process in the high collision energy domain.

Lateral spin-orbit coupling and the Kondo effect in quantum dots

Science.gov (United States)

Vernek, Edson; Ngo, Anh; Ulloa, Sergio

2010-03-01

We present studies of the Coulomb blockade and Kondo regimes of transport of a quantum dot connected to current leads through spin-polarizing quantum point contacts (QPCs) [1]. This configuration, arising from the effect of lateral spin-orbit fields, results in spin-polarized currents even in the absence of external magnetic fields and greatly affects the correlations in the dot. Using an equation-of-motion technique and numerical renormalization group calculations we obtain the conductance and spin polarization for this system under different parameter regimes. Our results show that both the Coulomb blockade and Kondo regimes exhibit non-zero spin-polarized conductance. We analyze the role that the spin-dependent tunneling amplitudes of the QPC play in determining the charge and net magnetic moment in the dot. We find that the Kondo regime exhibits a strongly dependent Kondo temperature on the QPC polarizability. These effects, controllable by lateral gate voltages, may provide a new approach for exploring Kondo correlations, as well as possible spin devices. Supported by NSF DMR-MWN and PIRE. [1] P. Debray et al., Nature Nanotech. 4, 759 (2009).

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

Science.gov (United States)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

Science.gov (United States)

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantifying Spin Hall Angles from Spin Pumping : Experiments and Theory

NARCIS (Netherlands)

Mosendz, O.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

2010-01-01

Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets. We show how spin Hall effects can be quantified by integrating Ni80Fe20|normal metal (N) bilayers into a coplanar

Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

International Nuclear Information System (INIS)

Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

1996-01-01

Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)

Quark loops and spin-flip effects in pomeron exchange

International Nuclear Information System (INIS)

Goloskokov, S.V.

1991-01-01

On the basis of QCD at large distances with taking account of some nonperturbative properties of the theory, the possibility of spin-flip effects in high energy hadron processes at fixed momenta transfer is investigated. It is shown that the diagrams with the quark loops in QCD at large distances may lead to the spin-flip amplitude growing as s for s→∞, t-fixed. The confirmation of this result is obtained by calculations of the nonleading contributions from quark loops in t-channel exchange in QED up to the end. Physical mechanisms leading to that behaviour of the spin-flip amplitude is discussed. So we conclude that the pomeron has a complicated spin structure. (orig.)

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

Physics Colloquium: Theory of the spin wave Seebeck effect in magnetic insulators

CERN Multimedia

Université de Genève

2011-01-01

Geneva University Physics Department 24, quai Ernest-Ansermet CH-1211 Geneva 4 Lundi 28 février 2011 17h00 - École de Physique, Auditoire Stückelberg Theory of the spin wave Seebeck effect in magnetic insulators Prof. Gerrit Bauer Delft University of Technology The subfield of spin caloritronics addresses the coupling of heat, charge and spin currents in nanostructures. In the center of interest is here the spin Seebeck effect, which was discovered in an iron-nickel alloy. Uchida et al. recently observed the effect also in an electrically insulating Yttrium Iron Garnett (YIG) thin magnetic film. To our knowledge this is the first observation of a Seebeck effect generated by an insulator, implying that the physics is fundamentally different from the conventional Seebeck effect in metals. We explain the experiments by the pumping of a spin current into the detecting contacts by the thermally excited magnetization dynamics. In this talk I will give a brief overview over the state o...

Spin-Spin Relaxation and Karyagin-Gol'danskii Effect in FeCl3·6H2O

DEFF Research Database (Denmark)

Thrane, N.; Trumpy, Georg

1970-01-01

. Qualitatively, the experimental results can be explained by a combination of a temperature-and magnetic-field-dependent spin-spin relaxation and the Karyagin-Gol'danskii effect. This implies that the zero-field splitting is about 20°K between the lowest-lying Kramers doublet, found to be the |±1 / 2...

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

Quantum phase transitions in effective spin-ladder models for graphene zigzag nanoribbons

Science.gov (United States)

Koop, Cornelie; Wessel, Stefan

2017-10-01

We examine the magnetic correlations in quantum spin models that were derived recently as effective low-energy theories for electronic correlation effects on the edge states of graphene nanoribbons. For this purpose, we employ quantum Monte Carlo simulations to access the large-distance properties, accounting for quantum fluctuations beyond mean-field-theory approaches to edge magnetism. For certain chiral nanoribbons, antiferromagnetic interedge couplings were previously found to induce a gapped quantum disordered ground state of the effective spin model. We find that the extended nature of the intraedge couplings in the effective spin model for zigzag nanoribbons leads to a quantum phase transition at a large, finite value of the interedge coupling. This quantum critical point separates the quantum disordered region from a gapless phase of stable edge magnetism at weak intraedge coupling, which includes the ground states of spin-ladder models for wide zigzag nanoribbons. To study the quantum critical behavior, the effective spin model can be related to a model of two antiferromagnetically coupled Haldane-Shastry spin-half chains with long-ranged ferromagnetic intrachain couplings. The results for the critical exponents are compared also to several recent renormalization-group calculations for related long-ranged interacting quantum systems.

Heavy water isotopic rectification in the ''ORPHEE'' reactor. SACLAY studies Centre

International Nuclear Information System (INIS)

Lejeune, P.; Breant, P.

1993-01-01

ORPHEE reactor supplies neutron beams, which are got back in a heavy water reflector. The neutron beams intensity depends on the reflector quality which is determined by the isotopic content of the heavy water. The deuterium submitted to core irradiation changes in radioactive tritium which must be eliminated largely for reasons of safety. The column must keep the heavy water isotopic content of the reflector to a value higher than 99.8% by eliminating light water by fractional distillation or rectification. This column is also used for the tritium elimination of heavy water. 13 figs

Environmental Effects on Quantum Reversal of Mesoscopic Spins

Science.gov (United States)

Giraud, R.; Chiorescu, I.; Wernsdorfer, W.; Barbara, B.; Jansen, A. G. M.; Caneschi, A.; Mueller, A.; Tkachuk, A. M.

2002-10-01

We describe what we learnt these last years on quantum reversal of large magnetic moments, using mainly conventional SQUID or micro-SQUID magnetometry. Beside the case of ferromagnetic nanoparticles with 103 - 105 atoms (e.g. Co, Ni, Fe, Ferrites), most fruitful systems appeared to be ensembles of magnetic molecules. These molecules, generally arranged in single crystals, carry relatively small magnetic moments (S = 10 in Mn12-ac and Fe8). They are sufficiently apart from each other not to be coupled by exchange interactions. The ground multiplet is split over an energy barrier of tens of kelvin (≈ 67 K for Mn12) by a strong local crystal field, leading to an Ising-type ground-state. Only weak inter-molecular dipolar interactions are present, as well as intra-molecular interactions, such as hyperfine interactions. Quantum properties of molecule spins are crucially dependent on their magnetic environment of electronic and nuclear spins (the spin bath). Energy fluctuations of the spin bath of about 0.1 K are important, especially at very low temperatures. In particular, they are much larger than the ground-state tunnel splitting of large-spin molecules in low applied fields, of about 10-8 K or even less (such a low value is due to the presence of large energy barriers). Theoretical predictions are experimentally checked for tunneling effects in the presence of non-equilibrated or equilibrated spin-energy distribution. It is also shown that the phonon-bath plays no role in low field, except when the temperature approaches the cross-over temperature to the thermal activation regime. In fact, spin-phonon transitions can play a role only if the tunnel splitting is not too small in comparison with kBT. This is the case both for large-spin molecules in a large magnetic field (e.g. Mn12-ac in a few tesla) and for low-spin molecules, as shown with the study of the molecule V15 (Hilbert space dimension as large as 215 and spin 1/2). We also give our latest results on the

A study of environmental effects on galaxy spin using MaNGA data

Science.gov (United States)

Lee, Jong Chul; Hwang, Ho Seong; Chung, Haeun

2018-06-01

We investigate environmental effects on galaxy spin using the recent public data of Mapping Nearby Galaxies at APO (MaNGA) integral field spectroscopic survey containing ˜2800 galaxies. We measure the spin parameter of 1830 galaxies through the analysis of two-dimensional stellar kinematic maps within the effective radii, and obtain their large-scale (background mass density from 20 nearby galaxies) and small-scale (distance to and morphology of the nearest neighbour galaxy) environmental parameters for 1529 and 1767 galaxies, respectively. We first examine the mass dependence of galaxy spin, and find that the spin parameter of early-type galaxies decreases with stellar mass at log (M*/M⊙) ≳ 10, consistent with the results from previous studies. We then divide the galaxies into three subsamples using their stellar masses to minimize the mass effects on galaxy spin. The spin parameters of galaxies in each subsample do not change with background mass density, but do change with distance to and morphology of the nearest neighbour. In particular, the spin parameter of late-type galaxies decreases as early-type neighbours approach within the virial radius. These results suggest that the large-scale environments hardly affect the galaxy spin, but the small-scale environments such as hydrodynamic galaxy-galaxy interactions can play a substantial role in determining galaxy spin.

Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph; Kubis, Tillmann; Vogl, Peter [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2009-07-01

We present a systematic study of the intrinsic spin-Hall effect and its inverse effect in various two dimensional nanostructures using the non-equilibrium Green's function technique. We include elastic impurity scattering as well as inelastic acoustical phonon scattering. The parameters for the Dresselhaus and Rashba spin-orbit coupling are obtained from an atomistic tight binding calculation. We predict exceptionally large spin polarization effects in specially band engineered and geometrically designed nanostructures. In strained p-GasAs, we find a k-linear spin splitting that is enhanced by a factor of 50 compared to the unstrained case. We propose a T shaped three-terminal device that acts as a spin polarizer without external magnetic field. Optimizing the geometry with respect to the spin-precession length results in a spin accumulation at the drain contacts of up to 25%. We also study the inverse intrinsic spin-Hall effect. In a four-terminal ''H'' shaped structure it can be used to measure the direct spin-Hall effect by simply applying a gate voltage. For such a measurement, we predict a threshold value for the spin-orbit coupling strength that cannot be met by simple n-GaAs systems.

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

International Nuclear Information System (INIS)

Miah, M Idrish

2008-01-01

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-09-21

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs.

Towards Rectifying Performance at the Molecular Scale.

Science.gov (United States)

Zhang, Guang-Ping; Xie, Zhen; Song, Yang; Hu, Gui-Chao; Wang, Chuan-Kui

2017-10-24

Molecular diode, proposed by Mark Ratner and Arieh Aviram in 1974, is the first single-molecule device investigated in molecular electronics. As a fundamental device in an electric circuit, molecular diode has attracted an enduring and extensive focus during the past decades. In this review, the theoretical and experimental progresses of both charge-based and spin-based molecular diodes are summarized. For the charge-based molecular diodes, the rectifying properties originated from asymmetric molecules including D-σ-A, D-π-A, D-A, and σ-π type compounds, asymmetric electrodes, asymmetric nanoribbons, and their combination are analyzed. Correspondingly, the rectification mechanisms are discussed in detail. Furthermore, a series of strategies for modulating rectification performance is figured out. Discussion on concept of molecular spin diode is also involved based on a magnetic co-oligomer. At the same time, the intrinsic mechanism as well as the modulation of the spin-current rectification performance is introduced. Finally, several crucial issues that need to be addressed in the future are given.

Topological Hall and spin Hall effects in disordered skyrmionic textures

KAUST Repository

Ndiaye, Papa Birame; Akosa, Collins Ashu; Manchon, Aurelien

2017-01-01

We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.

Topological Hall and spin Hall effects in disordered skyrmionic textures

KAUST Repository

Ndiaye, Papa Birame

2017-02-24

We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.

Proximity effects and Josephson currents in ferromagnet. Spin-triplet superconductors junctions

International Nuclear Information System (INIS)

Terrade, Damien

2015-01-01

Spin-triplet superconductivity, first attached to the description of 3 He, is now generally considered to also occur in heavy-fermions compounds and in perovskite ruthenium oxide Sr 2 RuO 4 . The latter material is especially interesting since many experiments show strong evidences for a unitary chiral spin-triplet state. Moreover, the recent fabrication of thin heterostructures made of ferromagnetic SrRuO 3 on the top of Sr 2 RuO 4 strongly encourages new theoretical studies on the interplay between spin-triplet superconductor and ferromagnet in similar fashion to spin-singlet superconductors. Using an extended tight-binding Hamiltonian to model the superconductor, we discuss in this thesis the specific proximity effects of such interface by solving self-consistently the Bogoliubov-De Gennes equations on two- and three-dimensional lattices in the ballistic limit. We obtain the spatial profile of the superconducting order parameters at the interface as well as the spin-polarisation and the current across the Josephson junctions. In contrast to heterostructures made of spin-singlet superconductor, we show that the physical properties at the interface are not only controlled by the strength of the magnetization inside the ferromagnet but also by its orientation due to the existence of a finite pair spin projection of the spin-triplet Cooper pairs. We analyse in the first part the spin-polarisation and the Gibbs free energy at the three-dimensional ferromagnet-chiral spin-triplet superconductor interface. Then, the second part of the thesis is dedicated to the study of the Josephson junctions made of a chiral spin-triplet superconductor and a ferromagnetic barrier. More precisely, we analyse the existence of 0-π state transitions in two- and three-dimensional junctions with respect to the strength and the orientation of the magnetization. Finally, we study the proximity effects at the interface of helical spin-triplet superconductors. They differ from the chiral

Effect of Noise on the Decoherence of a Central Electron Spin Coupled to an Antiferromagnetic Spin Bath

Directory of Open Access Journals (Sweden)

G. C. Fouokeng

2014-01-01

Full Text Available We analyze the influence of a two-state autocorrelated noise on the decoherence and on the tunneling Landau-Zener (LZ transitions during a two-level crossing of a central electron spin (CES coupled to a one dimensional anisotropic-antiferomagnetic spin, driven by a time-dependent global external magnetic field. The energy splitting of the coupled spin system is found through an approach that computes the noise-averaged frequency. At low magnetic field intensity, the decoherence (or entangled state of a coupled spin system is dominated by the noise intensity. The effects of the magnetic field pulse and the spin gap antiferromagnetic material used suggest to us that they may be used as tools for the direct observation of the tunneling splitting through the LZ transitions in the sudden limit. We found that the dynamical frequencies display basin-like behavior decay with time, with the birth of entanglement, while the LZ transition probability shows Gaussian shape.

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

International Nuclear Information System (INIS)

Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

2012-01-01

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effect of Twisting and Stretching on Magneto Resistance and Spin Filtration in CNTs

Directory of Open Access Journals (Sweden)

Anil Kumar Singh

2017-08-01

Full Text Available Spin-dependent quantum transport properties in twisted carbon nanotube and stretched carbon nanotube are calculated using density functional theory (DFT and non-equilibrium green’s function (NEGF formulation. Twisting and stretching have no effect on spin transport in CNTs at low bias voltages. However, at high bias voltages the effects are significant. Stretching restricts any spin-up current in antiparallel configuration (APC, which results in higher magneto resistance (MR. Twisting allows spin-up current almost equivalent to the pristine CNT case, resulting in lower MR. High spin filtration is observed in PC and APC for pristine, stretched and twisted structures at all applied voltages. In APC, at low voltages spin filtration in stretched CNT is higher than in pristine and twisted ones, with pristine giving a higher spin filtration than twisted CNT.

Spin drift and spin diffusion currents in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-09-15

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

Directory of Open Access Journals (Sweden)

M Idrish Miah

2008-01-01

Full Text Available On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Spin drift and spin diffusion currents in semiconductors

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is in the spin drift or spin diffusion regime. Spin drift-diffusion crossover fields for GaAs are calculated and are found to be quite small. We derive the relations between intrinsic spin diffusion length and the spin drift-diffusion crossover field of a semiconductor for different electron statistical regimes. The findings resulting from this investigation might be important for semiconductor spintronics.

Muonium spin exchange in spin-polarized media: Spin-flip and -nonflip collisions

International Nuclear Information System (INIS)

Senba, M.

1994-01-01

The transverse relaxation of the muon spin in muonium due to electron spin exchange with a polarized spin-1/2 medium is investigated. Stochastic calculations, which assume that spin exchange is a Poisson process, are carried out for the case where the electron spin polarization of the medium is on the same axis as the applied field. Two precession signals of muonium observed in intermediate fields (B>30 G) are shown to have different relaxation rates which depend on the polarization of the medium. Furthermore, the precession frequencies are shifted by an amount which depends on the spin-nonflip rate. From the two relaxation rates and the frequency shift in intermediate fields, one can determine (i) the encounter rate of muonium and the paramagnetic species, (ii) the polarization of the medium, and most importantly (iii) the quantum-mechanical phase shift (and its sign) associated with the potential energy difference between electron singlet and triplet encounters. Effects of spin-nonflip collisions on spin dynamics are discussed for non-Poisson as well as Poisson processes. In unpolarized media, the time evolution of the muon spin in muonium is not influenced by spin-nonflip collisions, if the collision process is Poissonian. This seemingly obvious statement is not true anymore in non-Poissonian processes, i.e., it is necessary to specify both spin-flip and spin-nonflip rates to fully characterize spin dynamics

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

Science.gov (United States)

Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

2015-12-01

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

Isotopic and spin-nuclear effects in solid hydrogens (Review Article)

Science.gov (United States)

Freiman, Yuri A.; Crespo, Yanier

2017-12-01

The multiple isotopic family of hydrogens (H2, HD, D2, HT, DT, T2) due to large differences in the de Boer quantum parameter and inertia moments displays a diversity of pronounced quantum isotopic solid-state effects. The homonuclear members of this family (H2, D2, T2) due to the permutation symmetry are subjects of the constraints of quantum mechanics which link the possible rotational states of these molecules to their total nuclear spin giving rise to the existence of two spin-nuclear modifications, ortho- and parahydrogens, possessing substantially different properties. Consequently, hydrogen solids present an unique opportunity for studying both isotope and spin-nuclear effects. The rotational spectra of heteronuclear hydrogens (HD, HT, DT) are free from limitations imposed by the permutation symmetry. As a result, the ground state of these species in solid state is virtually degenerate. The most dramatic consequence of this fact is an effect similar to the Pomeranchuk effect in 3He which in the case of the solid heteronuclear hydrogens manifests itself as the reentrant broken symmetry phase transitions. In this review article we discuss thermodynamic and kinetic effects pertaining to different isotopic and spin-nuclear species, as well as problems that still remain to be solved.

Magnus effects on spinning transonic missiles

Science.gov (United States)

Seginer, A.; Rosenwasser, I.

1983-01-01

Magnus forces and moments were measured on a basic-finner model spinning in transonic flow. Spin was induced by canted fins or by full-span or semi-span, outboard and inboard roll controls. Magnus force and moment reversals were caused by Mach number, reduced spin rate, and angle of attack variations. Magnus center of pressure was found to be independent of the angle of attack but varied with the Mach number and model configuration or reduced spin rate.

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

Science.gov (United States)

Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.

2016-12-01

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by preforming continuous wave (cw) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and room temperature using microwave frequencies between about 1 GHz and 20 GHz, as well as pulsed EDMR at the X band (10 GHz). Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes whereas pulsed EDMR allows for the observation of coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, in which monomer units are twisted with respect to each other, and an ordered (β) phase, where all monomers lie within one plane. In thin films of organic light-emitting diodes, the appearance of a particular phase can be controlled by deposition parameters and solvent vapor annealing, and is verified by electroluminescence spectroscopy. Under bipolar charge-carrier injection conditions, we conducted multifrequency cw EDMR, electrically detected Rabi spin-beat experiments, and Hahn echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron-spin-echo envelope modulation due to the coupling of the carrier spins to nearby nuclear spins. Our results demonstrate that, while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge-carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. In both morphologies, we observe the presence of at least two different spin-dependent recombination processes. At room temperature and 10 K, polaron-pair recombination through weakly spin-spin coupled

Spin Hall effect in a 2DEG in the presence of magnetic couplings

International Nuclear Information System (INIS)

Gorini, C; Schwab, P; Dzierzawa, M; Raimondi, R; Milletari, M

2009-01-01

It is now well established that the peculiar linear-in-momentum dependence of the Rashba (and of the Dresselhaus) spin-orbit coupling leads to the vanishing of the spin Hall conductivity in the bulk of a two-dimensional electron gas (2DEG). In this paper we discuss how generic magnetic couplings change this behaviour providing then a potential handle on the spin Hall effect. In particular we examine the influence of magnetic impurities and an in-plane magnetic field. We find that in both cases there is a finite spin Hall effect and we provide explicit expressions for the spin Hall conductivity. The results can be obtained by means of the quasiclassical Green function approach, that we have recently extended to spin-orbit coupled electron systems.

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

Science.gov (United States)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

Optical spin generation/detection and spin transport lifetimes

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Optical spin generation/detection and spin transport lifetimes

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-02-25

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Spin Start Line Effects on the J2X Gas Generator Chamber Acoustics

Science.gov (United States)

Kenny, R. Jeremy

2011-01-01

The J2X Gas Generator engine design has a spin start line connected near to the turbine inlet vanes. This line provides helium during engine startup to begin turbomachinery operation. The spin start line also acts as an acoustic side branch which alters the chamber's acoustic modes. The side branch effectively creates 'split modes' in the chamber longitudinal modes, in particular below the first longitudinal mode and within the frequency range associated with the injection-coupled response of the Gas Generator. Interaction between the spin start-modified chamber acoustics and the injection-driven response can create a higher system response than without the spin start attached to the chamber. This work reviews the acoustic effects of the spin start line as seen throughout the workhorse gas generator test program. A simple impedance model of the spin start line is reviewed. Tests were run with no initial spin start gas existing in the line, as well as being initially filled with nitrogen gas. Tests were also run with varying spin start line lengths from 0" to 40". Acoustic impedance changes due to different spin start gas constituents and line lengths are shown. Collected thermocouple and static pressure data in the spin start line was used to help estimate the fluid properties along the line length. The side branch impedance model was coupled to a chamber impedance model to show the effects on the overall chamber response. Predictions of the spin start acoustic behavior for helium operation are shown and compared against available data.

Spinning gravitating objects in the effective field theory in the post-Newtonian scheme

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Université Pierre et Marie Curie-Paris VI, CNRS-UMR 7095,Institut d’Astrophysique de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Sorbonne Universités, Institut Lagrange de Paris,98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan [Max-Planck-Institute for Gravitational Physics (Albert-Einstein-Institute),Am Mühlenberg 1, 14476 Potsdam-Golm (Germany); Centro Multidisciplinar de Astrofisica, Instituto Superior Tecnico, Universidade de Lisboa,Avenida Rovisco Pais 1, 1049-001 Lisboa (Portugal)

2015-09-30

We introduce a formulation for spinning gravitating objects in the effective field theory in the post-Newtonian scheme in the context of the binary inspiral problem. We aim at an effective action, where all field modes below the orbital scale are integrated out. We spell out the relevant degrees of freedom, in particular the rotational ones, and the associated symmetries. Building on these symmetries, we introduce the minimal coupling part of the point particle action in terms of gauge rotational variables, and construct the spin-induced nonminimal couplings, where we obtain the leading order couplings to all orders in spin. We specify the gauge for the rotational variables, where the unphysical degrees of freedom are eliminated already from the Feynman rules, and all the orbital field modes are integrated out. The equations of motion of the spin can be directly obtained via a proper variation of the action, and Hamiltonians may be straightforwardly derived. We implement this effective field theory for spin to derive all spin dependent potentials up to next-to-leading order to quadratic level in spin, namely up to the third post-Newtonian order for rapidly rotating compact objects. In particular, the proper next-to-leading order spin-squared potential and Hamiltonian for generic compact objects are also derived. For the implementations we use the nonrelativistic gravitational field decomposition, which is found here to eliminate higher-loop Feynman diagrams also in spin dependent sectors, and facilitates derivations. This formulation for spin is thus ideal for treatment of higher order spin dependent sectors.

Spin-Caloritronic Batteries

DEFF Research Database (Denmark)

Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang

2017-01-01

The thermoelectric performance of a topological energy converter is analyzed. The H-shaped device is based on a combination of transverse topological effects involving the spin: the inverse spin Hall effect and the spin Nernst effect. The device can convert a temperature drop in one arm into an e...

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

OpenAIRE

Saffarzadeh, Alireza; Daqiq, Reza

2009-01-01

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2014-10-01

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

KAUST Repository

Tahir, M.

2013-04-26

We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

KAUST Repository

Tahir, M.; Manchon, Aurelien; Sabeeh, K.; Schwingenschlö gl, Udo

2013-01-01

We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

Nuclear spin bath effects in molecular nanomagnets: Direct quantum mechanical simulations

Science.gov (United States)

Sinitsyn, N. A.; Dobrovitski, V. V.

2004-11-01

We investigate the influence of nuclear spins on the electronic spin tunneling in magnetic molecules such as Fe8 , focusing on the role of the spin diffusion in the nuclear spin bath. We simulate the quantum spin dynamics by numerically solving the time-dependent Schrödinger equation for the compound system (the electronic spin plus the bath spins). Our results demonstrate that the effect of the spin bath cannot always be modeled as a randomly varying magnetic field acting on the electronic spin. We consider two dynamical regimes: the spin relaxation in a constant magnetic field, and the spin tunneling in the linearly varying magnetic field passing the avoided level crossing, so-called Landau-Zener-Stückelberg (LZS) transition. For the first regime, we confirmed that the hole in the magnetization distribution has the width of the hyperfine fields distribution. For the second regime, we found that the transition probability for moderately slow sweeps deviates from the standard LZS prediction, while for the fast sweeps the deviation is negligible.

Equivalence of ADM Hamiltonian and Effective Field Theory approaches at next-to-next-to-leading order spin1-spin2 coupling of binary inspirals

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Institut d' Astrophysique de Paris, Université Pierre et Marie Curie, CNRS-UMR 7095, 98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan, E-mail: michele.levi@upmc.fr, E-mail: jan.steinhoff@ist.utl.pt [Centro Multidisciplinar de Astrofisica, Instituto Superior Tecnico, Universidade de Lisboa, Avenida Rovisco Pais 1, 1049-001 Lisboa (Portugal)

2014-12-01

The next-to-next-to-leading order spin1-spin2 potential for an inspiralling binary, that is essential for accuracy to fourth post-Newtonian order, if both components in the binary are spinning rapidly, has been recently derived independently via the ADM Hamiltonian and the Effective Field Theory approaches, using different gauges and variables. Here we show the complete physical equivalence of the two results, thereby we first prove the equivalence of the ADM Hamiltonian and the Effective Field Theory approaches at next-to-next-to-leading order with the inclusion of spins. The main difficulty in the spinning sectors, which also prescribes the manner in which the comparison of the two results is tackled here, is the existence of redundant unphysical spin degrees of freedom, associated with the spin gauge choice of a point within the extended spinning object for its representative worldline. After gauge fixing and eliminating the unphysical degrees of freedom of the spin and its conjugate at the level of the action, we arrive at curved spacetime generalizations of the Newton-Wigner variables in closed form, which can also be used to obtain further Hamiltonians, based on an Effective Field Theory formulation and computation. Finally, we make use of our validated result to provide gauge invariant relations among the binding energy, angular momentum, and orbital frequency of an inspiralling binary with generic compact spinning components to fourth post-Newtonian order, including all known sectors up to date.

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Science.gov (United States)

Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

Spin current through quantum-dot spin valves

International Nuclear Information System (INIS)

Wang, J; Xing, D Y

2006-01-01

We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Synaptic excitation in spinal motoneurons alternates with synaptic inhibition and is balanced by outward rectification during rhythmic motor network activity

DEFF Research Database (Denmark)

Guzulaitis, Robertas; Hounsgaard, Jorn

2017-01-01

channels. Intrinsic outward rectification facilitates spiking by focusing synaptic depolarization near threshold for action potentials. By direct recording of synaptic currents, we also show that motoneurons are activated by out-of-phase peaks in excitation and inhibition during network activity, whereas......Regular firing in spinal motoneurons of red-eared turtles (Trachemys scripta elegans, either sex) evoked by steady depolarization at rest is replaced by irregular firing during functional network activity. The transition caused by increased input conductance and synaptic fluctuations in membrane...... potential was suggested to originate from intense concurrent inhibition and excitation. We show that the conductance increase in motoneurons during functional network activity is mainly caused by intrinsic outward rectification near threshold for action potentials by activation of voltage and Ca2+ gated K...

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Spin-current emission governed by nonlinear spin dynamics.

Science.gov (United States)

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Spin nematics next to spin singlets

Science.gov (United States)

Yokoyama, Yuto; Hotta, Chisa

2018-05-01

We provide a route to generate nematic order in a spin-1/2 system. Unlike the well-known magnon-binding mechanism, our spin nematics requires neither the frustration effect nor spin polarization in a high field or in the vicinity of a ferromagnet, but instead appears next to the spin singlet phase. We start from a state consisting of a quantum spin-1/2 singlet dimer placed on each site of a triangular lattice, and show that interdimer ring exchange interactions efficiently dope the SU(2) triplets that itinerate and interact, easily driving a stable singlet state to either Bose-Einstein condensates or a triplet crystal, some hosting a spin nematic order. A variety of roles the ring exchange serves includes the generation of a bilinear-biquadratic interaction between nearby triplets, which is responsible for the emergent nematic order separated from the singlet phase by a first-order transition.

Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors

Science.gov (United States)

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

Science.gov (United States)

Rehman, Majeed Ur; Qiao, Zhenhua

2018-02-01

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Next-to-next-to-leading order gravitational spin-squared potential via the effective field theory for spinning objects in the post-Newtonian scheme

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Université Pierre et Marie Curie, CNRS-UMR 7095, Institut d' Astrophysique de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan, E-mail: michele.levi@upmc.fr, E-mail: jan.steinhoff@aei.mpg.de [Max-Planck-Institute for Gravitational Physics (Albert-Einstein-Institute), Am Mühlenberg 1, 14476 Potsdam-Golm (Germany)

2016-01-01

The next-to-next-to-leading order spin-squared interaction potential for generic compact binaries is derived for the first time via the effective field theory for gravitating spinning objects in the post-Newtonian scheme. The spin-squared sector is an intricate one, as it requires the consideration of the point particle action beyond minimal coupling, and mainly involves the spin-squared worldline couplings, which are quite complex, compared to the worldline couplings from the minimal coupling part of the action. This sector also involves the linear in spin couplings, as we go up in the nonlinearity of the interaction, and in the loop order. Hence, there is an excessive increase in the number of Feynman diagrams, of which more are higher loop ones. We provide all the Feynman diagrams and their values. The beneficial ''nonrelativistic gravitational'' fields are employed in the computation. This spin-squared correction, which enters at the fourth post-Newtonian order for rapidly rotating compact objects, completes the conservative sector up to the fourth post-Newtonian accuracy. The robustness of the effective field theory for gravitating spinning objects is shown here once again, as demonstrated in a recent series of papers by the authors, which obtained all spin dependent sectors, required up to the fourth post-Newtonian accuracy. The effective field theory of spinning objects allows to directly obtain the equations of motion, and the Hamiltonians, and these will be derived for the potential obtained here in a forthcoming paper.

Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid

International Nuclear Information System (INIS)

Zayets, V.

2014-01-01

It is shown that spin direction of an electron may not be conserved after a spin-independent scattering. The spin rotations occur due to a quantum-mechanical fact that when a quantum state is occupied by two electrons of opposite spins, the total spin of the state is zero and the spin direction of each electron cannot be determined. It is shown that it is possible to divide all conduction electrons into two group distinguished by their time-reversal symmetry. In the first group the electron spins are all directed in one direction. In the second group there are electrons of all spin directions. The number of electrons in each group is conserved after a spin-independent scattering. This makes it convenient to use these groups for the description of the magnetic properties of conduction electrons. The energy distribution of spins, the Pauli paramagnetism and the spin distribution in the ferromagnetic metals are described within the presented model. The effects of spin torque and spin-torque current are described. The origin of spin-transfer torque is explained within the presented model

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History.

Directory of Open Access Journals (Sweden)

Janin Riedelsberger

Full Text Available Voltage-gated potassium (K+ channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD, this K+ channel type segregates into at least two main functional categories-hyperpolarization-activated, inward-rectifying (Kin and depolarization-activated, outward-rectifying (Kout channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

Spin effects in elastic scattering of nucleons and new approach to problem of account for spin structure of hadrons

International Nuclear Information System (INIS)

Babaev, Z.R.; Shchelkachev, A.V.

1991-01-01

Prospects of decribing polarization effects within the framework of quark-parton models (QPM) using a density matrix in order to describe the parton spin states in hadrons are discussed. Such an approach allows one to get rid of contradictions occuring when describing the QPM of reactions of hadrons polarized in perpendicular to the scattering plane in case of applying spin distribution functions. Different model predictions for the observed one- and two-spin correlations in elastic nucleon-nucleon scattering are analyzed. 12 refs., 2 tabs

Skyrmionic spin Seebeck effect via dissipative thermomagnonic torques

Science.gov (United States)

Kovalev, Alexey A.

2014-06-01

We derive thermomagnonic torque and its "β-type" dissipative correction from the stochastic Landau-Lifshitz-Gilbert equation. The β-type dissipative correction describes viscous coupling between magnetic dynamics and magnonic current and it stems from spin mistracking of the magnetic order. We show that thermomagnonic torque is important for describing temperature gradient induced motion of skyrmions in helical magnets while dissipative correction plays an essential role in generating transverse Magnus force. We propose to detect such skyrmionic motion by employing the transverse spin Seebeck effect geometry.

Electron spin and nuclear spin manipulation in semiconductor nanosystems

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Yusa, Go; Sasaki, Satoshi

2006-01-01

Manipulations of electron spin and nuclear spin have been studied in AlGaAs/GaAs semiconductor nanosystems. Non-local manipulation of electron spins has been realized by using the correlation effect between localized and mobile electron spins in a quantum dot- quantum wire coupled system. Interaction between electron and nuclear spins was exploited to achieve a coherent control of nuclear spins in a semiconductor point contact device. Using this device, we have demonstrated a fully coherent manipulation of any two states among the four spin levels of Ga and As nuclei. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Spin-orbit effects in carbon-nanotube double quantum dots

DEFF Research Database (Denmark)

Weiss, S; Rashba, E I; Kuemmeth, Ferdinand

2010-01-01

We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...

Spin effects in nonlinear Compton scattering in a plane-wave laser pulse

International Nuclear Information System (INIS)

Boca, Madalina; Dinu, Victor; Florescu, Viorica

2012-01-01

We study theoretically the electron angular and energy distribution in the non-linear Compton effect in a finite plane-wave laser pulse. We first present analytical and numerical results for unpolarized electrons (described by a Volkov solution of the Dirac equation), in comparison with those corresponding to a spinless particle (obeying the Klein–Gordon equation). Then, in the spin 1/2 case, we include results for the spin flip probability. The regime in which the spin effects are negligible, i.e. the results for the unpolarized spin 1/2 particle coincide practically with those for the spinless particle, is the same as the regime in which the emitted radiation is well described by classical electrodynamics.

Spin transfer in an open ferromagnetic layer: from negative damping to effective temperature

Energy Technology Data Exchange (ETDEWEB)

Wegrowe, J-E; Ciornei, M C; Drouhin, H-J [Laboratoire des Solides Irradies, Ecole Polytechnique, CNRS-UMR 7642 and CEA/DSM/DRECAM, 91128 Palaiseau Cedex (France)

2007-04-23

Spin transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin injection. All experimental results concerning spin transfer (quasi-static hysteresis loops or AC resonance measurements) are described on the basis of the Landau-Lifshitz-Gilbert equation of the magnetization, in which additional current dependent terms are added, like current dependent effective fields and current dependent damping factors, that can be positive or negative. The origin of these terms can be investigated further by performing stochastic experiments, like one-shot relaxation experiments under spin injection in the activation regime of the magnetization. In this regime, the Neel-Brown activation law is observed which leads to the introduction of a current dependent effective temperature. In order to define these counterintuitive parameters (effective temperature and negative damping), a detailed thermokinetic analysis of the different sub-systems involved is performed. This report presents a thermokinetic description of the different forms of energy exchanged between the electric and the ferromagnetic sub-systems at a normal/ferromagnetic junction. The derivation of the Fokker-Planck equation in the framework of the thermokinetic theory allows the transport parameters to be defined from the entropy variation and refined with the Onsager reciprocity relations and symmetry properties of the magnetic system. The contribution of the spin polarized current is introduced as an external source term in the conservation laws of the ferromagnetic layer. Due to the relaxation time separation, this contribution can be reduced to an effective damping. The flux of energy transferred between the ferromagnet and the spin polarized current can be positive or negative, depending on the spin accumulation configuration. The effective temperature is deduced in the activation (stationary) regime, provided that the relaxation time that couples the magnetization to the

OPTICS. Quantum spin Hall effect of light.

Science.gov (United States)

Bliokh, Konstantin Y; Smirnova, Daria; Nori, Franco

2015-06-26

Maxwell's equations, formulated 150 years ago, ultimately describe properties of light, from classical electromagnetism to quantum and relativistic aspects. The latter ones result in remarkable geometric and topological phenomena related to the spin-1 massless nature of photons. By analyzing fundamental spin properties of Maxwell waves, we show that free-space light exhibits an intrinsic quantum spin Hall effect—surface modes with strong spin-momentum locking. These modes are evanescent waves that form, for example, surface plasmon-polaritons at vacuum-metal interfaces. Our findings illuminate the unusual transverse spin in evanescent waves and explain recent experiments that have demonstrated the transverse spin-direction locking in the excitation of surface optical modes. This deepens our understanding of Maxwell's theory, reveals analogies with topological insulators for electrons, and offers applications for robust spin-directional optical interfaces. Copyright © 2015, American Association for the Advancement of Science.

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

Science.gov (United States)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Spin disorder effect in anomalous Hall effect in MnGa

Science.gov (United States)

Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

2017-12-01

We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

A first-principles linear response description of the spin Nernst effect

OpenAIRE

Wimmer, S.; Ködderitzsch, D.; Chadova, K.; Ebert, H.

2013-01-01

A first-principles description of the spin Nernst effect, denoting the occurrence of a transverse spin current due to a temperature gradient, is presented. The approach, based on an extension to the Kubo-Streda equation for spin transport, supplies in particular the formal basis for investigations of diluted as well as concentrated alloys. Results for corresponding applications to the alloy system Au-Cu give the intrinsic and extrinsic contributions to the relevant transport coefficients. Usi...

Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

Directory of Open Access Journals (Sweden)

G. A. Nemnes

2012-01-01

Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface

Science.gov (United States)

Hao, Runrun; Zhong, Hai; Kang, Yun; Tian, Yufei; Yan, Shishen; Liu, Guolei; Han, Guangbing; Yu, Shuyun; Mei, Liangmo; Kang, Shishou

2018-03-01

The spin transparency at the normal/ferromagnetic metal (NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect (SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect (ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents ({{\\boldsymbol{σ }}}sc}), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 (Py) than that of Ni is obtained from the nonlocal voltage measurements. Project supported by the National Basic Research Program of China (Grant No. 2015CB921502), the National Natural Science Foundation of China (Grant Nos. 11474184 and 11627805), the 111 Project, China (Grant No. B13029), and the Fundamental Research Funds of Shandong University, China.

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

International Nuclear Information System (INIS)

Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

2014-01-01

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

2014-01-05

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

Isotopic spin effect in three-pion Bose-Einstein correlations

International Nuclear Information System (INIS)

Suzuki, N.

1998-01-01

Bose-Einstein (BE) correlations of identical particles in multiple production processes are extensively studied last years because they give an information on the space-time region of interaction. The basic effect is analogous to Hanbury-Brown - Twiss (HBT) interferometry in optics and suggests statistical production of the particles (mainly π mesons). The possible presence of coherent pionic component (for example, in the case of disoriented chiral condensate formation) modifies the HBT effect. On the other hand, the pions (contrary to photons) are subject to isotopic spin (and electric charge) conservation and so they can not be emitted independently. While the corresponding change of the statistical part is not essential for large multiplicities, the coherent part changes substantially when isotopic spin conservation is taken into account. BE correlations of the pions in the presence of both statistical and coherent components are reconsidered taking into account isotopic spin conservation in the coherent part. That will result in appearance of additional contribution to pionic correlation function. (author)

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

Science.gov (United States)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

An edge index for the quantum spin-Hall effect

International Nuclear Information System (INIS)

Prodan, Emil

2009-01-01

Quantum spin-Hall systems are topological insulators displaying dissipationless spin currents flowing at the edges of the samples. In contradistinction to the quantum Hall systems where the charge conductance of the edge modes is quantized, the spin conductance is not and it remained an open problem to find the observable whose edge current is quantized. In this paper, we define a particular observable and the edge current corresponding to this observable. We show that this current is quantized and that the quantization is given by the index of a certain Fredholm operator. This provides a new topological invariant that is shown to take the generic values 0 and 2, in line with the Z 2 topological classification of time-reversal invariant systems. The result gives an effective tool for the investigation of the edge structure in quantum spin-Hall systems. Based on a reasonable assumption, we also show that the edge conducting channels are not destroyed by a random edge. (fast track communication)

Optical rectification in a strained GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot: Simultaneous effects of electric and magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Vinolin, Ada [Dept. of Physics, Madurai Kamaraj University College, Alagarkoil Road, Madurai-625002 (India); Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, Government Arts College, Melur-625106, Tamilnadu (India)

2014-04-24

Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot is computed in the presence of electric and magnetic fields.

Effect of thermal fluctuations in spin-torque driven magnetization dynamics

International Nuclear Information System (INIS)

Bonin, R.; Bertotti, G.; Serpico, C.; Mayergoyz, I.D.; D'Aquino, M.

2007-01-01

Nanomagnets with uniaxial symmetry driven by an external field and spin-polarized currents are considered. Anisotropy, applied field, and spin polarization are all aligned along the symmetry axis. Thermal fluctuations are described by adding a Gaussian white noise stochastic term to the Landau-Lifshitz-Gilbert equation for the deterministic dynamics. The corresponding Fokker-Planck equation is derived. It is shown that deterministic dynamics, thermal relaxation, and transition rate between stable states are governed by an effective potential including the effect of current injection

Effect of thermal fluctuations in spin-torque driven magnetization dynamics

Energy Technology Data Exchange (ETDEWEB)

Bonin, R. [INRiM, I-10135 Turin (Italy)]. E-mail: bonin@inrim.it; Bertotti, G. [INRiM, I-10135 Turin (Italy); Serpico, C. [Dipartimento di Ingegneria Elettrica, Universita di Napoli ' Federico II' I-80125 Naples (Italy); Mayergoyz, I.D. [Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742 (United States); D' Aquino, M. [Dipartimento per le Tecnologie, Universita di Napoli ' Parthenope' , I-80133 Naples (Italy)

2007-09-15

Nanomagnets with uniaxial symmetry driven by an external field and spin-polarized currents are considered. Anisotropy, applied field, and spin polarization are all aligned along the symmetry axis. Thermal fluctuations are described by adding a Gaussian white noise stochastic term to the Landau-Lifshitz-Gilbert equation for the deterministic dynamics. The corresponding Fokker-Planck equation is derived. It is shown that deterministic dynamics, thermal relaxation, and transition rate between stable states are governed by an effective potential including the effect of current injection.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung

2015-04-06

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-01-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

Science.gov (United States)

Yu, T; Wu, M W

2015-07-01

The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

SPIN EFFECTS IN THE FRAGMENTATION OF TRANSVERSELY POLARIZED AND UNPOLARIZED QUARKS

International Nuclear Information System (INIS)

ANSELMINO, M.; BOER, D.; DALESIO, U.; MURGIA, F.

2001-01-01

We study the fragmentation of a transversely polarized quark into a non-collinear (kperpendicular ≠ 0) spinless hadron and the fragmentation of an unpolarized quark into a non collinear transversely polarized spin 1/2 baryon. These nonperturbative properties are described by spin and kperpendicular dependent fragmentation functions and are revealed in the observation of single spin asymmetries. Recent data on the production of pions in polarized semi-inclusive DIS and long known data on A polarization in unpolarized p-N processes are considered: these new fragmentation functions can describe the experimental results and the single spin effects in the quark fragmentation turn out to be surprisingly large

Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

Energy Technology Data Exchange (ETDEWEB)

Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

2013-12-02

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

Thermoelastic enhancement of the magnonic spin Seebeck effect in thin films and bulk samples

Science.gov (United States)

Chotorlishvili, L.; Wang, X.-G.; Toklikishvili, Z.; Berakdar, J.

2018-04-01

A nonuniform temperature profile may generate a pure spin current in magnetic films, as observed, for instance, in the spin Seebeck effect. In addition, thermally induced elastic deformations may set in that could affect the spin current. A self-consistent theory of the magnonic spin Seebeck effect including thermally activated magnetoelastic effects is presented, and analytical expressions for the thermally activated deformation tensor and dispersion relations for coupled magnetoelastic modes are obtained. We derive analytical results for bulk (three-dimensional) systems and thin magnetic (two-dimensional) films. We observe that the displacement vector and the deformation tensor in bulk systems decay asymptotically as u ˜1 /R2 and ɛ ˜1 /R3 , respectively, while the decays in thin magnetic films proceed slower, following u ˜1 /R and ɛ ˜1 /R2 . The dispersion relations evidence a strong anisotropy in the magnetic excitations. We observe that a thermoelastic steady-state deformation may lead to both an enchantment and a reduction of the gap in the magnonic spectrum. The reduction of the gap increases the number of magnons contributing to the spin Seebeck effect and offers new possibilities for the thermoelastic control of the spin Seebeck effect.

Thermoelectric performance of spin Seebeck effect in Fe3O4/Pt-based thin film heterostructures

Directory of Open Access Journals (Sweden)

R. Ramos

2016-10-01

Full Text Available We report a systematic study on the thermoelectric performance of spin Seebeck devices based on Fe3O4/Pt junction systems. We explore two types of device geometries: a spin Hall thermopile and spin Seebeck multilayer structures. The spin Hall thermopile increases the sensitivity of the spin Seebeck effect, while the increase in the sample internal resistance has a detrimental effect on the output power. We found that the spin Seebeck multilayers can overcome this limitation since the multilayers exhibit the enhancement of the thermoelectric voltage and the reduction of the internal resistance simultaneously, therefore resulting in significant power enhancement. This result demonstrates that the multilayer structures are useful for improving the thermoelectric performance of the spin Seebeck effect.

Quantum spin transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph

2012-05-15

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Quantum spin transport in semiconductor nanostructures

International Nuclear Information System (INIS)

Schindler, Christoph

2012-01-01

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Effects of electric field and magnetic induction on spin injection into organic semiconductors

International Nuclear Information System (INIS)

Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

2011-01-01

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

THE EFFECT OF TRANSIENT ACCRETION ON THE SPIN-UP OF MILLISECOND PULSARS

Energy Technology Data Exchange (ETDEWEB)

Bhattacharyya, Sudip; Chakrabarty, Deepto, E-mail: sudip@tifr.res.in [Department of Astronomy and Astrophysics, Tata Institute of Fundamental Research, 1 Homi Bhabha Road, Colaba, Mumbai 400005 (India)

2017-01-20

A millisecond pulsar is a neutron star that has been substantially spun up by accretion from a binary companion. A previously unrecognized factor governing the spin evolution of such pulsars is the crucial effect of nonsteady or transient accretion. We numerically compute the evolution of accreting neutron stars through a series of outburst and quiescent phases, considering the drastic variation of the accretion rate and the standard disk–magnetosphere interaction. We find that, for the same long-term average accretion rate, X-ray transients can spin up pulsars to rates several times higher than can persistent accretors, even when the spin-down due to electromagnetic radiation during quiescence is included. We also compute an analytical expression for the equilibrium spin frequency in transients, by taking spin equilibrium to mean that no net angular momentum is transferred to the neutron star in each outburst cycle. We find that the equilibrium spin rate for transients, which depends on the peak accretion rate during outbursts, can be much higher than that for persistent sources. This explains our numerical finding. This finding implies that any meaningful study of neutron star spin and magnetic field distributions requires the inclusion of the transient accretion effect, since most accreting neutron star sources are transients. Our finding also implies the existence of a submillisecond pulsar population, which is not observed. This may point to the need for a competing spin-down mechanism for the fastest-rotating accreting pulsars, such as gravitational radiation.

Quantum spin correction scheme based on spin-correlation functional for Kohn-Sham spin density functional theory

International Nuclear Information System (INIS)

Yamanaka, Shusuke; Takeda, Ryo; Nakata, Kazuto; Takada, Toshikazu; Shoji, Mitsuo; Kitagawa, Yasutaka; Yamaguchi, Kizashi

2007-01-01

We present a simple quantum correction scheme for ab initio Kohn-Sham spin density functional theory (KS-SDFT). This scheme is based on a mapping from ab initio results to a Heisenberg model Hamiltonian. The effective exchange integral is estimated by using energies and spin correlation functionals calculated by ab initio KS-SDFT. The quantum-corrected spin-correlation functional is open to be designed to cover specific quantum spin fluctuations. In this article, we present a simple correction for dinuclear compounds having multiple bonds. The computational results are discussed in relation to multireference (MR) DFT, by which we treat the quantum many-body effects explicitly

On the Josephson effect between superconductors in singlet and triplet spin-pairing states

International Nuclear Information System (INIS)

Pals, J.A.; Haeringen, W. van

1977-01-01

An expression is derived for the Josephson current between two weakly coupled superconductors of which one or both have pairs in a spin-triplet state. It is shown that there can be no Josephson effect up to second order in the transition matrix elements between a superconductor with spin-triplet pairs and one with spin-singlet pairs if the coupling between the two superconductors can be described with a spin-conserving tunnel hamiltonian. This is shown to offer a possibility to investigate experimentally whether a particular superconductor has spin-triplet pairs by coupling it weakly to a well-known spin-singlet pairing superconductor. (Auth.)

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

Science.gov (United States)

Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

2017-11-09

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

Spin current

CERN Document Server

Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

2017-01-01

Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Noise in tunneling spin current across coupled quantum spin chains

Science.gov (United States)

Aftergood, Joshua; Takei, So

2018-01-01

We theoretically study the spin current and its dc noise generated between two spin-1 /2 spin chains weakly coupled at a single site in the presence of an over-population of spin excitations and a temperature elevation in one subsystem relative to the other, and we compare the corresponding transport quantities across two weakly coupled magnetic insulators hosting magnons. In the spin chain scenario, we find that applying a temperature bias exclusively leads to a vanishing spin current and a concomitant divergence in the spin Fano factor, defined as the spin current noise-to-signal ratio. This divergence is shown to have an exact analogy to the physics of electron scattering between fractional quantum Hall edge states and not to arise in the magnon scenario. We also reveal a suppression in the spin current noise that exclusively arises in the spin chain scenario due to the fermion nature of the spin-1/2 operators. We discuss how the spin Fano factor may be extracted experimentally via the inverse spin Hall effect used extensively in spintronics.

Spin effects in the screening and Auger neutralization of He+ ions in a spin-polarized electron gas

International Nuclear Information System (INIS)

Alducin, M.; Diez Muino, R.; Juaristi, J.I.

2005-01-01

The screening of a He + ion embedded in a free electron gas is studied for different spin-polarizations of the medium. Density functional theory and the local spin density approximation are used to calculate the induced electronic density for each spin orientation, i.e. parallel or antiparallel to the spin of the electron bound to the ion. Since both the He + ion and the electron gas are spin-polarized, we analyze in detail the spin state of the screening cloud for the two different possibilities: the spin of the bound electron can be parallel to either the majority spin or the minority spin in the medium. Finally, the spin-dependent Kohn-Sham orbitals are used to calculate the Auger neutralization rate of the He + ion. The polarization of the Auger excited electron is influenced by the spin-polarization of the medium. The results are discussed in terms of the spin-dependent screening and the indistinguishability of electrons with the same spin state

Next-to-next-to-leading order gravitational spin-orbit coupling via the effective field theory for spinning objects in the post-Newtonian scheme

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Université Pierre et Marie Curie, CNRS-UMR 7095, Institut d' Astrophysique de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan, E-mail: michele.levi@upmc.fr, E-mail: jan.steinhoff@aei.mpg.de [Max-Planck-Institute for Gravitational Physics (Albert-Einstein-Institute), Am Mühlenberg 1, 14476 Potsdam-Golm (Germany)

2016-01-01

We implement the effective field theory for gravitating spinning objects in the post-Newtonian scheme at the next-to-next-to-leading order level to derive the gravitational spin-orbit interaction potential at the third and a half post-Newtonian order for rapidly rotating compact objects. From the next-to-next-to-leading order interaction potential, which we obtain here in a Lagrangian form for the first time, we derive straightforwardly the corresponding Hamiltonian. The spin-orbit sector constitutes the most elaborate spin dependent sector at each order, and accordingly we encounter a proliferation of the relevant Feynman diagrams, and a significant increase of the computational complexity. We present in detail the evaluation of the interaction potential, going over all contributing Feynman diagrams. The computation is carried out in terms of the ''nonrelativistic gravitational'' fields, which are advantageous also in spin dependent sectors, together with the various gauge choices included in the effective field theory for gravitating spinning objects, which also optimize the calculation. In addition, we automatize the effective field theory computations, and carry out the automated computations in parallel. Such automated effective field theory computations would be most useful to obtain higher order post-Newtonian corrections. We compare our Hamiltonian to the ADM Hamiltonian, and arrive at a complete agreement between the ADM and effective field theory results. Finally, we provide Hamiltonians in the center of mass frame, and complete gauge invariant relations among the binding energy, angular momentum, and orbital frequency of an inspiralling binary with generic compact spinning components to third and a half post-Newtonian order. The derivation presented here is essential to obtain further higher order post-Newtonian corrections, and to reach the accuracy level required for the successful detection of gravitational radiation.

Spin-Triplet Pairing Induced by Spin-Singlet Interactions in Noncentrosymmetric Superconductors

Science.gov (United States)

Matsuzaki, Tomoaki; Shimahara, Hiroshi

2017-02-01

In noncentrosymmetric superconductors, we examine the effect of the difference between the intraband and interband interactions, which becomes more important when the band splitting increases. We define the difference ΔVμ between their coupling constants, i.e., that between the intraband and interband hopping energies of intraband Cooper pairs. Here, the subscript μ of ΔVμ indicates that the interactions scatter the spin-singlet and spin-triplet pairs when μ = 0 and μ = 1,2,3, respectively. It is shown that the strong antisymmetric spin-orbit interaction reverses the target spin parity of the interaction: it converts the spin-singlet and spin-triplet interactions represented by ΔV0 and ΔVμ>0 into effective spin-triplet and spin-singlet pairing interactions, respectively. Hence, for example, triplet pairing can be induced solely by the singlet interaction ΔV0. We name the pairing symmetry of the system after that of the intraband Cooper pair wave function, but with an odd-parity phase factor excluded. The pairing symmetry must then be even, even for the triplet component, and the following results are obtained. When ΔVμ is small, the spin-triplet p-wave interactions induce spin-triplet s-wave and spin-triplet d-wave pairings in the regions where the repulsive singlet s-wave interaction is weak and strong, respectively. When ΔV0 is large, a repulsive interband spin-singlet interaction can stabilize spin-triplet pairing. When the Rashba interaction is adopted for the spin-orbit interaction, the spin-triplet pairing interactions mediated by transverse magnetic fluctuations do not contribute to triplet pairing.

Magnon polarons in the spin seebeck effect

NARCIS (Netherlands)

Kikkawa, T.; Shen, K.; Flebus, B.; Duine, R.A.; Uchida, K.I.; Qiu, Z.; Bauer, G.E.W.; Saitoh, E.

2016-01-01

Sharp structures in the magnetic field-dependent spin Seebeck effect (SSE) voltages of Pt/Y3Fe5O12 at low temperatures are attributed to the magnon-phonon interaction. Experimental results are well reproduced by a Boltzmann theory that includes magnetoelastic coupling. The SSE anomalies coincide

Spin effect on parametric interactions of waves in magnetoplasmas

International Nuclear Information System (INIS)

Shahid, M.; Melrose, D. B.; Jamil, M.; Murtaza, G.

2012-01-01

The parametric decay instability of upper hybrid wave into low-frequency electromagnetic Shear Alfvén wave and Ordinary mode radiation (O-mode) has been investigated in an electron-ion plasma immersed in the uniform external magnetic field. Incorporating quantum effect due to electron spin, the fluid model has been used to investigate the linear and nonlinear response of the plasma species for three-wave coupling in a magnetoplasma. It is shown that the spin of electrons has considerable effect on the parametric decay of upper hybrid wave into Ordinary mode radiation (O-mode) and Shear Alfvén wave even in classical regime.

Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D., E-mail: gbeach@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2016-06-06

We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

Long-wavelength spin-effective actions for the infinite U Hubbard model

Science.gov (United States)

Braghin, Fábio L.

2013-04-01

The derivation of spin-effective actions is envisaged for the Hubbard model with infinite Coulomb repulsion for a very low concentration of holes with a slave fermion representation for electronic operators. For that, spinless charge variables (vacancies or holes) are integrated out and the resulting effective action at finite temperature is expanded up to the fourth order in the hopping term as proposed in reference [F.L. Braghin, A. Ferraz, E.A. Kochetov, Phys. Rev. B 78, 115109 (2008)] and, in a square lattice, the fourth order term is shown to have the structure of an extended gauge invariant J-Q model for localized spins. Two cases for which the resulting model is non trivial are analysed and they correspond basically to (1) holes hopping between two sub-lattices and (2) a time-dependent solution for the spinon variables in the square lattice. Whereas the first of these cases yields, at the leading order, an effective antiferromagnetic Heisenberg coupling for localized spins and the second one may lead either to ferromagnetic or antiferromagnetic effective coupling. In the second case, the ordering should appear rather in finite size domains and, although charge variables were integrated out, a subtle imbalance between charge degrees of freedom and spins should be at work.

Spin-pump-induced spin transport in a thermally evaporated pentacene film

Energy Technology Data Exchange (ETDEWEB)

Tani, Yasuo; Shikoh, Eiji, E-mail: shikoh@elec.eng.osaka-cu.ac.jp [Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan); Teki, Yoshio [Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)

2015-12-14

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni{sub 80}Fe{sub 20} tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni{sub 80}Fe{sub 20}, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

Covariant Conservation Laws and the Spin Hall Effect in Dirac-Rashba Systems

Science.gov (United States)

Milletarı, Mirco; Offidani, Manuel; Ferreira, Aires; Raimondi, Roberto

2017-12-01

We present a theoretical analysis of two-dimensional Dirac-Rashba systems in the presence of disorder and external perturbations. We unveil a set of exact symmetry relations (Ward identities) that impose strong constraints on the spin dynamics of Dirac fermions subject to proximity-induced interactions. This allows us to demonstrate that an arbitrary dilute concentration of scalar impurities results in the total suppression of nonequilibrium spin Hall currents when only Rashba spin-orbit coupling is present. Remarkably, a finite spin Hall conductivity is restored when the minimal Dirac-Rashba model is supplemented with a spin-valley interaction. The Ward identities provide a systematic way to predict the emergence of the spin Hall effect in a wider class of Dirac-Rashba systems of experimental relevance and represent an important benchmark for testing the validity of numerical methodologies.

Proximity effect in semiconductor films with spin-splitting and spin-orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Michelsen, Jens; Grein, Roland [Institut fuer Theoretische Festkoerperphysik, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany)

2012-07-01

Superconducting heterostructures with spin-active materials have emerged as promising platforms for engineering topological superconductors featuring Majorana bound states at surfaces, edges and vortices. Here we present a method for evaluating, from a microscopic model, the band structure of a semiconductor film of finite thickness deposited on top of a conventional superconductor. Analytical expressions for the proximity induced gap openings are presented in terms of microscopic parameters and the proximity effect in presence of spin-orbit and exchange splitting is visualized in terms of Andreev reflection processes. An expression for the topological invariant, associated with the existence of Majorana bound states, is shown to depend only on parameters of the semiconductor film. The finite thickness of the film leads to resonant states in the film giving rise to a complex band structure with the topological phase alternating between trivial and non-trivial as the parameters are tuned of the film are tuned.

Spin effects in perturbative quantum chromodynamics

International Nuclear Information System (INIS)

Brodsky, S.J.; Lepage, G.P.

1980-12-01

The spin dependence of large momentum transfer exclusive and inclusive reactions can be used to test the gluon spin and other basic elements of QCD. In particular, exclusive processes including hadronic decays of heavy quark resonances have the potential of isolating QCD hard scattering subprocesses in situations where the helicities of all the interacting constituents are controlled. The predictions can be summarized in terms of QCD spin selection rules. The calculation of magnetic moment and other hadronic properties in QCD are mentioned

Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry

Science.gov (United States)

2016-01-01

Conspectus Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to �

Spin caloritronics, origin and outlook

International Nuclear Information System (INIS)

Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe

2017-01-01

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Spin caloritronics, origin and outlook

Energy Technology Data Exchange (ETDEWEB)

Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)

2017-03-03

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Bipolar spintronics: from spin injection to spin-controlled logic

International Nuclear Information System (INIS)

Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

2007-01-01

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

Influence of the Kinetics of Heat and Mass Transfer in a Binary-Rectification Column on the Realizability Range of its Regimes

Science.gov (United States)

Zaeva, M. A.; Tsirlin, A. M.; Sukin, I. A.

2018-05-01

The range of realizable rates of flows in a binary-rectification column in which heat is supplied into the boiler and is removed from the dephlegmator was investigated. It is shown that this range is determined by two characteristic parameters related to the kinetics of heat and mass transfer in the column and the composition of the mixture subjected to separation. The limiting capabilities of a cascade of two binary-rectification columns for the separation of a ternary mixture in it were considered. The conditions for an optimum sequence of separation of a mixture in this cascade and for a consistent arrangement of its heat and mass exchange surfaces and the relation between the ultimate production rate of the cascade and the total heat losses in it were determined.