The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

International Nuclear Information System (INIS)

Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

2010-01-01

Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

Bioorganic nanodots for non-volatile memory devices

International Nuclear Information System (INIS)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

2013-01-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

Emerging non-volatile memories

CERN Document Server

Hong, Seungbum; Wouters, Dirk

2014-01-01

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

Institute of Scientific and Technical Information of China (English)

Young; Tea; Chun; Daping; Chu

2015-01-01

Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

Sono-catalytic degradation of organic compounds

International Nuclear Information System (INIS)

Navarro, N.

2012-01-01

Unlike aqueous effluents from the PUREX process, aqueous effluents from advanced separation processes developed to separate the minor actinides (Am, Cm) contain organic reagents in large amounts. To minimize the impact of these organic compounds on the next steps of the process, and to respect standard discharges, it is necessary to develop new techniques of degradation of organic compounds. Sono-chemistry appears as a very promising solution to eliminate organic species in aqueous nuclear effluents. Indeed, the propagation of an ultrasonic wave in a liquid medium induces the appearance of cavitation bubbles which will quickly grow and implode, causing local conditions and extreme temperatures and pressures. Each cavitation bubble can then be considered as a microreactor at high temperature and high pressure able to destroy organic molecules without the addition of specific reagents. The first studies on the effect of ultrasonic frequency on sono-luminescence and sono-lysis of formic acid have shown that the degradation of formic acid occurs at the bubble/liquid interface. The most striking difference between low-frequency and high-frequency ultrasound is that the sono-lysis of HCOOH at high ultrasonic frequencies initiates secondary reactions not observed at 20 kHz. However, despite a much higher sono-chemical activity at high frequency, highly concentrated carboxylic acids in the aqueous effluents from advanced separation processes cannot be destroyed by ultrasound alone. To increase the efficiency of sono-chemical reactions, the addition of supported platinum catalysts has been studied. In these conditions, an increase of the kinetics of destruction of carboxylic acids such as oxalic acid is observed. (author) [fr

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Qualidade do sono e tolerância ao esforço em portadores de apneia obstrutiva do sono

Directory of Open Access Journals (Sweden)

Aliny Priscilla do Nascimento

2014-04-01

Full Text Available INTRODUÇÃO: O sono é um estado natural e recorrente, no qual acontecem processos neurobiológicos importantes. A má qualidade do sono está diretamente associada com piores indicadores de saúde. A qualidade do sono pode ser medida objetiva e subjetivamente por métodos como a polissonografia, que é o padrão de referência, ou por meio de testes e questionários, como o índice de qualidade de sono de Pittsburgh (IQSP. OBJETIVO: Correlacionar a qualidade do sono com a tolerância ao esforço em pacientes portadores da síndrome da apneia/hipopneia obstrutiva do sono (SAHOS. MÉTODOS: Participaram do estudo 63 indivíduos (57 mulheres e seis homens, média de idade de 51,7 ± 6,6 anos; índice de massa corpórea (IMC média de 28,2 ± 5,0 kg/m2; índice de apneia/hipopneia (IAH médio de 7,3 ± 10,50 eventos/hora, verificado através da polissonografia. Para a avaliação da qualidade do sono, os participantes responderam ao IQSP, e para a avaliação da tolerância ao esforço, realizaram o teste de caminhada de 6 minutos (TC6M. RESULTADOS: Não houve correlação entre o IQSP e o TC6M (Rs = -0,103620, p = 0,419, assim como entre o IAH e o TC6M (Rs = -0, 000984, p = 0,9939. Podemos sugerir que a qualidade do sono e a gravidade da SAHOS não afetam a tolerância ao esforço dos indivíduos com SAHOS. CONCLUSÃO: Estudos com uma amostra maior, levando-se em consideração a estratificação pela gravidade da SAHOS e utilizando métodos mais acurados de avaliação da capacidade funcional, devem ser realizados, a fim de que resultados mais abrangentes possam ser obtidos.

Qualidade do sono em pacientes fibromiálgicos

Directory of Open Access Journals (Sweden)

Florinda Freire Moro

2014-03-01

Full Text Available Objetivo: Analisar a qualidade do sono em paciente fibromiálgicos, identificando seus principais hábitos noturnos e verificando os possíveis fatores que influenciam na qualidade do sono. Métodos: Pesquisa observacional, transversal, de caráter quantitativo, realizada em ambulatório de fisioterapia no período março a abril de 2012. Participaram 24 pacientes fibromiálgicos, independente do sexo e idade. Aplicou-se um questionário baseado no Pittsburgh Sleep Quality Index (PSQI para avaliar a qualidade e hábitos noturnos. As informações foram analisadas através de estatística descritiva. Resultados: Em relação à latência do sono, apenas 1 (4,2% leva para dormir um tempo menor ou igual a 15 min e 19 (79,2% apontaram dificuldade de “não adormecer em até 30 min” por mais de 3 vezes por semana. O componente “sentir dor” e o “acordar no meio da noite” tiveram maiores influências no distúrbio do sono destes pacientes. Quanto à duração do sono, 7 (29,2% dormem menos que 5 horas. Sobre a eficiência do sono, 12 (50,0% possuíam uma eficiência do sono superior a 85%, 10 (41,7% possuíam eficiência do sono entre 75-84% e apenas 2 (8,33% eficiência de 65-74%. Quanto ao uso de medicação para dormir, 12 (50% não usaram durante o mês e 12 (50% usavam entre 3 ou mais vezes durante a semana. Conclusão: Os pacientes com fibromialgia no presente estudo apresentaram um declínio na qualidade e eficiência do sono, sendo influenciados pela latência e duração do sono, presença de dor e despertar noturno. doi: 10.5020/18061230.2014.p72

Qualidade do sono em pacientes fibromiálgicos

Directory of Open Access Journals (Sweden)

Florinda Freire Moro

2014-03-01

Full Text Available Objetivo: Analisar a qualidade do sono em paciente fibromiálgicos, identificando seus principais hábitos noturnos e verificando os possíveis fatores que influenciam na qualidade do sono. Métodos: Pesquisa observacional, transversal, de caráter quantitativo, realizada em ambulatório de fisioterapia no período março a abril de 2012. Participaram 24 pacientes fibromiálgicos, independente do sexo e idade. Aplicou-se um questionário baseado no Pittsburgh Sleep Quality Index (PSQI para avaliar a qualidade e hábitos noturnos. As informações foram analisadas através de estatística descritiva. Resultados: Em relação à latência do sono, apenas 1 (4,2% leva para dormir um tempo menor ou igual a 15 min e 19 (79,2% apontaram dificuldade de “não adormecer em até 30 min” por mais de 3 vezes por semana. O componente “sentir dor” e o “acordar no meio da noite” tiveram maiores influências no distúrbio do sono destes pacientes. Quanto à duração do sono, 7 (29,2% dormem menos que 5 horas. Sobre a eficiência do sono, 12 (50,0% possuíam uma eficiência do sono superior a 85%, 10 (41,7% possuíam eficiência do sono entre 75-84% e apenas 2 (8,33% eficiência de 65-74%. Quanto ao uso de medicação para dormir, 12 (50% não usaram durante o mês e 12 (50% usavam entre 3 ou mais vezes durante a semana. Conclusão: Os pacientes com fibromialgia no presente estudo apresentaram um declínio na qualidade e eficiência do sono, sendo influenciados pela latência e duração do sono, presença de dor e despertar noturno.

Bioorganic nanodots for non-volatile memory devices

Energy Technology Data Exchange (ETDEWEB)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

2013-12-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

Radiation evaluation of commercial ferroelectric nonvolatile memories

International Nuclear Information System (INIS)

Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

1991-01-01

This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

Fabrication and operation methods of a one-time programmable (OTP) nonvolatile memory (NVM) based on a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Cho, Seongjae; Lee, Junghoon; Jung, Sunghun; Park, Sehwan; Park, Byunggook

2011-01-01

In this paper, a novel one-time programmable (OTP) nonvolatile memory (NVM) device and its array based on a metal-insulator-semiconductor (MIS) structure is proposed. The Iindividual memory device has a vertical channel of a silicon diode. Historically, OTP memories were widely used for read-only-memories (ROMs), in which the most basic system architecture model was to store central processing unit (CPU) instructions. By grafting the nanoscale fabrication technology and novel structuring onto the concept of the OTP memory, innovative high-density NVM appliances for mobile storage media may be possible. The program operation is performed by breaking down the thin oxide layer between the pn diode structure and the wordline (WL). The programmed state can be identified by an operation that reads the leakage currents through the broken oxide. Since the proposed OTP NVM is based on neither a transistor structure nor a charge storing mechanism, it is highly reliable and functional for realizing the ultra-large scale integration. The operation physics and the fabrication processes are also explained in detail.

High-Speed Non-Volatile Optical Memory: Achievements and Challenges

Directory of Open Access Journals (Sweden)

Vadym Zayets

2017-01-01

Full Text Available We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed.

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

International Nuclear Information System (INIS)

Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

2010-01-01

This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Identificação de hábitos de sono, compreensão do sono e rotinas de sono em crianças de idade escolar : estudo com crianças e pais

OpenAIRE

Guimarães, Ana Cristina

2013-01-01

Tese de mestrado, Psicologia (Secção de Psicologia Clínica da Saúde - Núcleo de Psicologia Clínica da Saúde e da Doença), Universidade de Lisboa, Faculdade de Psicologia, 2013 O sono é um fenómeno universal de grande importância para o desenvolvimento infantil. A qualidade do sono é determinada por vários factores, entre eles as rotinas de sono. É assim importante estudar as rotinas de forma a aumentar o conhecimento sobre este determinante. Apesar da criança ter um papel importan...

Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

International Nuclear Information System (INIS)

Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

2008-01-01

We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

Non-volatile memories

CERN Document Server

Lacaze, Pierre-Camille

2014-01-01

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Qualidade do sono entre professores e fatores associados

OpenAIRE

Denise Andrade Pereira Meier

2016-01-01

O sono desempenha função notável na prevenção de doenças, manutenção e recuperação da saúde física e mental. Como processo reparador, sofre influências de fatores determinantes e condicionantes, que o tornam complexo e multifacetado. As condições adversas de trabalho enfrentadas por professores podem prejudicar sua qualidade de vida e, consequentemente, seu padrão de sono. Este estudo objetivou analisar a qualidade do sono e fatores associados em professores da educação básica. Trata-se de um...

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Energy Technology Data Exchange (ETDEWEB)

Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

2015-06-24

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

Tunable Injection Barrier in Organic Resistive Switches Based on Phase-Separated Ferroelectric-Semiconductor Blends

NARCIS (Netherlands)

Asadi, Kamal; de Boer, Tom G.; Blom, Paul W. M.; de Leeuw, Dago M.

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

Tunable injection barrier in organic resistive switches based on phase-separated ferroelectric-semiconductor blends

NARCIS (Netherlands)

Asadi, K.; Boer, T.G. de; Blom, P.W.M.; Leeuw, D.M. de

2009-01-01

Organic non-volatile resistive bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers are fabricated. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-electrode contact and, hence, the resistance of the comprising

QUALIDADE DO SONO, CRONOTIPO E DESEMPENHO EM CORREDORES DE RUA

Directory of Open Access Journals (Sweden)

Igor Cruz

Full Text Available RESUMO Introdução: O exercício físico gera resultados positivos para a qualidade do sono e atua no ciclo sono-vigília por meio de seu efeito sincronizador indireto do relógio biológico. Objetivo: Avaliar a qualidade de sono, o cronotipo e o desempenho de corredores amadores de rua da cidade de Limeira. Métodos: Foram avaliados 42 indivíduos de ambos os sexos (28 ± 1,47 anos, que praticavam corrida de rua. O instrumento utilizado para aplicação dos questionários foi a plataforma Google Drive - Google Forms. Foram formuladas questões que englobam o cotidiano de um corredor de rua e também questionários para avaliação do cronotipo, sonolência e qualidade do sono. Resultados: Os resultados demonstraram que o cronotipo mais frequente foi o matutino (47,61%, seguido por intermediário (30,95% e vespertino (21,42%. A frequência de corridas foi 88% no período da manhã, 9% no período da noite e 4% período da tarde. Com relação à qualidade de sono geral foi verificado que 59% dos corredores tinham má qualidade de sono. Ao analisar as variáveis de sono e sonolência em decorrência do horário da última corrida realizada, verificou-se que as pessoas que correram no período da tarde tiveram pior qualidade do sono e os que correram à noite tiveram índices de sonolência. Não se encontrou diferença no desempenho das corridas de 5 km entre matutinos e vespertinos; no entanto, constatou-se fraca associação entre o tempo da última corrida e a pontuação do cronotipo, demonstrando que os matutinos realizavam as provas em menor tempo. Conclusão: Assim, podemos sugerir que o cronotipo e o padrão de sono podem interferir no desempenho e, dessa forma, devem ser levados em conta durante os treinamentos.

Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Uno, Masaaki

1990-01-08

As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Effect of ultrasonic frequency on the mechanism of formic acid sono-lysis

International Nuclear Information System (INIS)

Chave, T.; Nikitenko, S.I.; Navarro, N.M.; Pochon, P.; Bisel, I.

2011-01-01

The kinetics and mechanism of formic acid sono-chemical degradation were studied at ultrasonic frequencies of 20, 200, and 607 kHz under argon atmosphere. Total yield of HCOOH sono-chemical degradation increases approximately 6-8-fold when the frequency increased from 20 to 200 or to 607 kHz. At low ultrasonic frequencies, HCOOH degradation has been attributed to oxidation with OH . radicals from water sono-lysis and to the HCOOH decarboxylation occurring at the cavitation bubble-liquid interface. With high-frequency ultrasound, the sono-chemical reaction is also influenced by HCOOH dehydration. Whatever the ultrasonic frequency, the sono-lysis of HCOOH yielded H 2 and CO 2 in the gas phase as well as trace, amounts of oxalic acid and formaldehyde in the liquid phase. However, CO and CH 4 formations were only detected under high frequency ultrasound. The most striking difference between low frequency and high frequency ultrasound is that the sono-lysis of HCOOH at high ultrasonic frequencies initiates Fischer-Tropsch hydrogenation of carbon monoxide. (authors)

Sono e adolescência: quantas horas os adolescentes precisam dormir?

Directory of Open Access Journals (Sweden)

Érico Felden Pereira

2015-03-01

Full Text Available Objetivo Determinar a especificidade e a sensibilidade de uma medida para apontar o melhor ponto de corte para a duração de sono como preditor da sonolência diurna excessiva em adolescentes. Métodos Participaram do estudo 1.359 adolescentes, com idades de 14 a 21 anos, de duas cidades do sul do Brasil, que responderam a questionário de hábitos de sono e sonolência diurna. Utilizou-se a Receiver Operating Characteristic para estimar a capacidade preditiva da duração de sono para a sonolência diurna excessiva. Resultados A média de duração do sono para os adolescentes com sonolência diurna excessiva foi de 7,9 horas e para aqueles sem sonolência diurna excessiva foi de 8,33 horas (p < 0,001. A prevalência de sonolência diurna excessiva foi de 35,7%. Foi observada correlação significativa e negativa entre a duração do sono e as idades analisadas (p < 0,001. A análise de Receiver Operating Characteristic indicou duração mínima de 8,33 horas como proteção para a sonolência diurna excessiva. Conclusão Foi observada alta prevalência de sonolência diurna excessiva e propõe-se como possível duração de sono um mínimo de 8,33 horas nos dias com aula para que os adolescentes evitem esse desfecho.

Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M

1993-06-01

The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

Violência durante o sono Violent behavior during sleep

Directory of Open Access Journals (Sweden)

Dalva Poyares

2005-05-01

Full Text Available Casos de comportamento violento (CV durante o sono são relatados na literatura. A incidência de comportamento violento durante o sono não é muito conhecida. Um estudo epidemiológico mostra que cerca de 2% da população geral apresentava comportamento violento dormindo e eram predominantemente homens. Neste artigo, os autores descrevem aspectos clínicos e médico-legais envolvidos na investigação do comportamento violento. O comportamento violento se refere a ferimentos auto-infligidos ou infligidos a um terceiro durante o sono. Ocorre, muito freqüentemente, seguindo um despertar parcial no contexto de um transtorno de despertar (parassonias. Os transtornos do sono predominantes diagnosticados são: transtorno de comportamento REM e sonambulismo. O comportamento violento poderia ser precipitado pelo estresse, uso de álcool e drogas, privação do sono ou febre.Cases of violent behavior during sleep have been reported in the literature. However, the incidence of violent behavior during sleep is not known. One epidemiological study showed that approximately 2% of the general population, predominantly males, presented violent behavior while asleep. In the present study, the authors describe clinical and medico-legal aspects involved in violent behavior investigation. Violent behavior refers to self-injury or injury to another during sleep. It happens most frequently following partial awakening in the context of arousal disorders (parasomnias. The most frequently diagnosed sleep disorders are REM behavior disorder and somnambulism. Violent behavior might be precipitated by stress, use of alcohol or drugs, sleep deprivation or fever.

Qualidade do sono em portadores do vírus da imunodeficiência humana

Directory of Open Access Journals (Sweden)

Luciana Tiemi Kuranishi Ferreira

2012-08-01

Full Text Available Este estudo teve por objetivo caracterizar a qualidade do sono de pessoas com o vírus da imunodeficiência humana (HIV - AIDS - , com ou sem manifestações clínicas e sob tratamento ambulatorial. Para tal, foi realizada pesquisa descritiva e transversal. Os instrumentos utilizados foram: Questionário de Caracterização Sociodemográfica e Clínica; Índice de Qualidade de Sono de Pittsburgh (PSQI-BR. Participaram da pesquisa 122 pacientes (55,7% de homens e 44,3% de mulheres, com idade média de 42,3 (± 8,9 anos, dos quais 53,3% referiram apresentar sono de boa qualidade e 46,7%, sono de má qualidade. Dormiam, em média, 7,3 (± 1,8 horas, com latência de 23,2 (± 26,2 minutos e eficiência do sono de 87,8% (± 14,4. Observou-se associação significativa entre o sono de boa qualidade e os seguintes fatores: ter companheiro(a; apresentar carga viral indetectável; manter comportamento de risco. Recomenda-se que os profissionais de enfermagem incluam sistematicamente questões sobre o sono ao avaliarem o paciente com HIV/AIDS, detectando alterações precocemente e reunindo subsídios para o planejamento de intervenções.

Estudo comparativo de padrões de sono em trabalhadores de enfermagem dos turnos diurno e noturno

Directory of Open Access Journals (Sweden)

Milva Maria Figueiredo de Martino

2002-08-01

Full Text Available Objetivo. Comparar os padrões de sono de enfermeiros dos turnos diurno e noturno em um hospital de Campinas (SP, Brasil. Métodos. Participaram 59 enfermeiros entre 23 e 59 anos. Para os enfermeiros do dia, analisou-se o sono noturno, e, para os da noite, os sonos diurno e noturno. Os informantes preencheram um diário do sono durante 1 semana, ao acordar. Foram analisados hora de ir deitar, de dormir, e de acordar; latência do sono; horas de sono noturno e diurno; cochilos; qualidade do sono; modo de acordar; e comparação do sono registrado no diário com o sono habitual. Também foram coletadas informações pessoais e profissionais. Resultados. O grupo diurno ia dormir às 23h36min e o grupo noturno, às 23h52min (P <=0,004, Wilcoxon. Os enfermeiros diurnos acordavam mais cedo (7h3min do que os noturnos quando dormiam à noite (8h30min. A latência média do sono foi de 23min26s para os enfermeiros diurnos contra 22min50s para os noturnos; a duração do sono noturno foi de 7h11min e 9h6min, respectivamente. O cochilo esteve presente apenas no grupo diurno (média de 2h3min. O sono diurno dos enfermeiros da noite foi caracterizado pelo fracionamento (dois períodos, tempo de sono de 4h7min e 2h38min. O sono noturno do grupo noturno foi de melhor qualidade. O tempo médio de trabalho em hospital foi de 14,31 anos no grupo diurno contra 7,07 no grupo noturno (P <=0,05, Wilcoxon. Os sujeitos possuíam hábitos saudáveis, principalmente quanto ao consumo de álcool. Verificou-se uso de anti-hipertensivos, diuréticos e analgésicos. Conclusões. Os achados foram semelhantes aos descritos anteriormente. Seria recomendável que os enfermeiros do turno da noite pudessem tirar cochilos para compensar o déficit de sono durante a atividade noturna.

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

2017-01-01

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James

2017-01-02

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology

International Nuclear Information System (INIS)

Xu Yue; Yan Feng; Li Zhiguo; Yang Fan; Wang Yonggang; Chang Jianguang

2010-01-01

The influence of shallow trench isolation (STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology. (semiconductor devices)

Padrões de sono de estudantes ingressantes na Graduação em Enfermagem

OpenAIRE

Furlani, Renata; Ceolim, Maria Filomena

2005-01-01

Trata-se de estudo exploratório e descritivo com o objetivo de identificar os padrões de sono de estudantes ingressantes na graduação. Desenvolvido na Universidade Estadual de Campinas SP, os dados foram coletados em dois momentos distintos por meio do Índice de Qualidade de Sono de Pittsburgh. Durante as férias, os estudantes apresentaram melhor qualidade/ duração de sono e adoção de horários mais condizentes com seu cronotipo. Após o início das aulas, maior número apresentou sono de má qual...

Síndrome de apneia-hipopneia obstrutiva do sono

OpenAIRE

Carvalho, Vanessa Mafalda Araújo

2008-01-01

A Síndrome de Apneia/Hipopneia Obstrutiva do Sono apresenta actualmente uma elevada prevalência entre a população adulta, assim como diversas complicações inerentes a esta que aumentam a morbilidade e mortalidade dos pacientes que padecem desta patologia. Esta síndrome caracteriza-se pelo repetido estreitamento ou colapso das vias aéreas superiores durante o sono. A obstrução é causada pelo colapso do palato mole e/ou da base da língua contra as paredes faríngeas devido à diminuição do tónus ...

Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

Science.gov (United States)

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

Science.gov (United States)

Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

2017-10-11

The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

Fatores que interferem na qualidade do sono de pacientes internados

Directory of Open Access Journals (Sweden)

Shíntia Viana da Costa

2013-02-01

Full Text Available Este estudo objetivou identificar fatores que interferem na qualidade do sono de pacientes internados em hospital universitário do interior de São Paulo. Trata-se de estudo exploratório, de corte transversal, com amostragem não probabilística. Participaram 117 pacientes (59% homens, idade média de 48 anos, desvio padrão 16,9 internados há pelo menos 72 horas, em condições clínicas estáveis. Os instrumentos utilizados foram: questionário de identificação e Fatores Intervenientes na Qualidade do Sono (FIQS. O tratamento dos dados foi feito com estatística descritiva e cada item do FIQS foi submetido a teste e reteste. Os fatores apontados com maior frequência foram: acordar cedo (55,6%, sono interrompido (52,1%, iluminação excessiva (34,2%, recebimento de cuidados pela equipe de enfermagem (33,3% e distúrbios orgânicos como dor e fadiga (26,5%. Sugere-se que os enfermeiros planejem intervenções buscando modificar fatores que propiciam ruídos e iluminação intensos à noite, visando reduzir interrupções e, consequentemente, a privação de sono.

Nonvolatile Rad-Hard Holographic Memory

Science.gov (United States)

Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

2001-01-01

We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

Science.gov (United States)

Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

2015-09-01

In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

Síndrome da apneia e hipopneia obstrutiva do sono – SAHOS

Directory of Open Access Journals (Sweden)

Hélio Brasileiro

2009-03-01

Full Text Available A Síndrome da Apneia e Hipopneia Obstrutiva do Sono (SAHOS é caracterizada por episódios repetitivos de apneia e hipopneia durante o sono. Em artigos recentes, SAHOS severa (quando o número de apneia e hipopneia por hora de sono é maior que 30 é citada como fator de risco para doenças cardiovasculares e morte. Além disso, SAHOS é muito prevalente em pacientes com obesidade, diabetes e hipertensão arterial sistêmica, que também são fatores de risco para doença cardiovascular. A leptina e a grelina, dois hormônios reguladores do apetite, estão aumentadas em pacientes com SAHOS, segundo alguns artigos. Contudo, SAHOS é ainda uma doença subdiagnosticada.

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

International Nuclear Information System (INIS)

Jovanović, B.; Brum, R. M.; Torres, L.

2014-01-01

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

Energy Technology Data Exchange (ETDEWEB)

Jovanović, B., E-mail: bojan.jovanovic@lirmm.fr, E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L. [LIRMM—University of Montpellier 2/UMR CNRS 5506, 161 Rue Ada, 34095 Montpellier (France)

2014-04-07

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

Avaliação da qualidade de vida e do sono de atletas paralímpicos brasileiros

Directory of Open Access Journals (Sweden)

Andrea Maculano Esteves

2015-02-01

Full Text Available INTRODUÇÃO: o esporte paralímpico brasileiro vem ganhando destaque no cenário mundial e, com isso, a avaliação de variáveis que possam influenciar positivamente no desempenho desses atletas é de suma importância para o acompanhamento durante o seu período de treinamento. OBJETIVO: avaliar a qualidade de vida e do sono de atletas paralímpicos brasileiros. MÉTODOS: foram estudados 49 atletas paralímpicos das modalidades natação (n=20 e atletismo (n=29. Os atletas responderam a questionários que avaliaram seu padrão e queixas de sono e qualidade de vida. RESULTADOS: a maioria dos atletas (65,30% relatou má qualidade do sono, visto que a latência do sono neste grupo foi significativamente maior do que em atletas com boa qualidade de sono. Cinquenta por cento dos atletas relataram o desejo de fazer mudanças em seu horário de sono e 52% gostariam de aumentar o seu tempo de sono. A sonolência diurna excessiva foi observada em 53,06% dos atletas. Quanto às queixas de distúrbios do sono, foram relatados chute ou espasmos das pernas e ronco. Menores índices de qualidade de vida foram encontrados no meio ambiente em comparação com os domínios físicos, psicológicos ou sociais. CONCLUSÕES: os resultados sugerem que a maioria dos atletas apresentou uma má qualidade do sono e, consequentemente, um alto índice de insatisfação com o sono. Além disso, menores escores de qualidade de vida foram encontrados no domínio ambiental, que está relacionado com a segurança física, proteção e condições em casa.

{100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Identification of nonvolatile compounds in clove (Syzygium aromaticum) from Manado

Science.gov (United States)

Fathoni, A.; Saepudin, E.; Cahyana, A. H.; Rahayu, D. U. C.; Haib, J.

2017-07-01

Syzygium aromaticum (clove) are native to Indonesia and have been widely used in food industry due to their flavor. Nonvolatile compounds contribute to flavor, mainly in their taste. Currently, there is very little information available about nonvolatile compounds in clove. Identification of nonvolatile compounds is important to improve clove's value. Compound extraction was conducted by maceration in ethanol. Fractionations of the extract were performed by using gravity column chromatography on silica gel and Sephadex LH-20 as stationary phase. Nonvolatile compounds were identified by Liquid Chromatography-Tandem Mass Spectrometry (LC-MS/MS). LC-MS/MS was operated in negative mode with 0.1 % formic acid in water and acetonitrile as mobile phase. Nonvolatile compounds were identified by fragment analysis and compared to references. Several compounds had been identified and characterized asquinic acid, monogalloylglucose, gallic acid, digalloylglucose, isobiflorin, biflorin, ellagic acid, hydroxygallic acid, luteolin, quercetin, naringenin, kaempferol, isorhamnetin, dimethoxyluteolin, and rhamnetin. These compounds had two main flavor perceptions, i.e. astringent, and bitter.

Sono e adolescência: quantas horas os adolescentes precisam dormir?

OpenAIRE

Pereira,Érico Felden; Barbosa,Diego Grasel; Andrade,Rubian Diego; Claumann,Gaia Salvador; Pelegrini,Andreia; Louzada,Fernando Mazzilli

2015-01-01

Objetivo Determinar a especificidade e a sensibilidade de uma medida para apontar o melhor ponto de corte para a duração de sono como preditor da sonolência diurna excessiva em adolescentes. Métodos Participaram do estudo 1.359 adolescentes, com idades de 14 a 21 anos, de duas cidades do sul do Brasil, que responderam a questionário de hábitos de sono e sonolência diurna. Utilizou-se a Receiver Operating Characteristic para estimar a capacidade preditiva da ...

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

Science.gov (United States)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

Estudo prospectivo sobre os hábitos de sono na criança e no adolescente

Directory of Open Access Journals (Sweden)

Vera Rocha

2017-06-01

Full Text Available Introdução: O sono desempenha um papel fundamental do ponto de vista biológico, emocional, familiar e social. O impacto do sono sobre a saúde ganhou nos últimos tempos, uma maior atenção e tem-se tornado uma preocupação crescente dos pais. Este estudo tem como objetivos avaliar e caracterizar os hábitos de sono das crianças e dos adolescentes e relacionar o padrão de sono e o rendimento escolar desta população. Métodos: Foi aplicado um inquérito por entrevista direta com as crianças e adolescentes com idades entre os 10 e os 18 anos, em consulta de vigilância de saúde infantil, durante três meses. Resultados: Analisaram-se 113 inquéritos. A idade mediana foi de 13 anos, sendo 62,8% do sexo feminino. A mediana da duração do sono em ambos os sexos foi de 8 horas. Apenas 15 (13,3% cumpriram a recomendação das 10 a 11 horas de sono. 51,2 % das crianças / adolescentes que ficaram retidos, pelo menos uma vez, no mesmo ano letivo, dormiam menos de oito horas / dia (p <0,001. Cerca de 88% com a autoavaliação do desempenho escolar como “mau” apresentavam uma duração do sono inferior a 8 horas, sendo essa proporção de 11,8% (17% do total de inquiridos naqueles com uma autoavaliação “muito bom” (p <0,001. Crianças/ adolescentes com uma duração de menos de oito horas/ dia apresentavam uma probabilidade 5,5 vezes maior de ficarem retidos no mesmo ano escolar em comparação com aqueles com a duração mínima de 8 horas de sono. Foram encontradas diferenças estatisticamente significativas (p <0,001 entre a duração do sono e a dificuldade em adormecer e o adormecer em sala de aula. Discussão/ Conclusões: Os resultados mostram que é importante atuar na prevenção, alertando pais, crianças e adolescentes para a importância de uma boa higiene do sono, promovendo padrões de sono saudável.

Photo oxidative degradation of azure-B by sono-photo-Fenton and photo-Fenton reagents

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Prahlad Vaishnave

2014-12-01

Full Text Available A model for the decomposition of azure-B by photo-Fenton reagent in the presence of ultrasound in homogeneous aqueous solution has been described. The photochemical decomposition rate of azure-B is markedly increased in the presence of ultrasound. It is a rather inexpensive reagent for wastewater treatment. The effect of different variables like the concentration of ferric ion, concentration of dye, hydrogen peroxide, pH, light intensity etc. on the reaction rate has been observed. The progress of the sono-photochemical degradation was monitored spectrophotometrically. The optimum sono-photochemical degradation conditions were experimentally determined. The results showed that the dye was completely oxidized and degraded into CO2 and H2O. A suitable tentative mechanism for sono-photochemical bleaching of azure-B by sono-photo-Fenton’s reaction has been proposed.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Qualidade de sono de trabalhadores obesos de um hospital universitário: acupuntura como terapia complementar

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Mariana Lourenço Haddad

2012-02-01

Full Text Available O objetivo do estudo foi verificar o efeito da acupuntura na qualidade de sono de trabalhadores obesos em um hospital universitário. Os dados foram coletados no período de julho a outubro de 2009, junto a 37 funcionários, submetidos a oito aplicações semanais de acupuntura. O Índice de Qualidade de Sono de Pittsburgh foi utilizado para identificar a qualidade de sono dos sujeitos antes e após a intervenção. Os resultados mostram que antes da intervenção cinco (13,5% pessoas apresentaram boa qualidade de sono e, ao final da intervenção, 14 (37,8% relataram este quadro. A diferença obtida na comparação das médias dos escores obtidos antes e após a acupuntura foi significativa (p=0,0001. Concluiu-se que a acupuntura produziu um efeito positivo sobre a qualidade do sono na amostra estudada, apresentando-se como uma técnica adjuvante no tratamento dos distúrbios do sono e consequentemente na melhoria da qualidade de vida desta população.

Fatores que interferem no sono dos alunos idosos da Universidade da Maturidade (UMA, na cidade de Palmas (TO

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Núbia Kênia Carneiro Silva

2015-05-01

Full Text Available O processo de senescência ocasiona mudanças na quantidade e qualidade do sono; assim, a maioria dos idosos tem queixas relacionadas ao sono, decorrentes de mudanças fisiológicas específicas do processo de envelhecimento, que podem causar distúrbios relacionados ao sono. Objetiva-se verificar quais os fatores que interferem no sono dos idosos alunos da Universidade da Maturidade (UMA, na cidade de Palmas (TO. Trata-se de um estudo descritivo de corte transversal, e de natureza quantitativa. Para o levantamento dos dados, utilizaram-se os instrumentos: Questionário de caracterização socioeconômico, seguido da Escala de Sonolência de Epworth (ESE, e do Índice de Qualidade de Sono de Pittsburgh (PSQI. Os resultados da ESE revelaram que 75% do grupo masculino e 51,85% do feminino apresentaram sonolência diurna excessiva normal com escores <10. As respostas abertas do PSQI, em relação à hora de deitar, mostram que 43,75% dos homens deitavam entre 23 e 24 horas; no grupo das mulheres, 29,63% deitavam entre 21 e 22 horas; quanto ao tempo para dormir, 68,75% dos homens e 62,96% das mulheres demoravam ≤ 15 minutos; em relação à hora de acordar, 75% dos homens e 37,04% das mulheres acordam entre 6 e 7 horas; em relação a quantas horas de sono dormiu por noite, 50% dos homens dormiram entre 7 e 8 horas por noite, e 51,85% das mulheres dormiram ≥ 8 horas por noite. Já no PSQI global, 56,25% dos homens possuem uma boa qualidade do sono, enquanto 66,67% das mulheres apresentaram má qualidade do sono, apesar de terem uma maior eficiência relacionada ao sono. Os resultados mostraram que os homens tiveram uma boa qualidade do sono e as mulheres tiveram uma má qualidade do sono.  

Nonvolatile Memory Technology for Space Applications

Science.gov (United States)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Relação entre a prevalência de Bruxismo e a Apneia do Sono

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Andressa Bergmeier

2016-08-01

Full Text Available A síndrome da apneia obstrutiva do sono é considerada um transtorno respiratório do sono cuja característica principal são pausas na respiração durante o sono. Estas paradas podem ter relação com várias patologias do sono, como por exemplo o bruxismo, que nada mais é que o contato não-funcional dos dentes. O objetivo do presente trabalho foi verificar a prevalência do bruxismo em pacientes com a apneia do sono e avaliar se há uma relação deste com o grau de apneia. A avaliação foi realizada através de exame polissonográfico, onde foram avaliados 23 pacientes que se submeteram à polissonografia na clinica SNN no mês de agosto. Os dados da pesquisa demonstraram que 52% dos participantes foram diagnosticados com apneia do sono do tipo grave e destes, 75% além de apneia possuíam bruxismo. A apneia moderada foi diagnosticada em 26% dos pacientes, onde 8,30% tiveram episódios de bruxismo.  Já 22% dos pacientes possuíam Apneia leve, e destes 16,70% tiveram episodio de bruxismo. Não houve Correlação significativa entre o grau de apneia e a frequência de bruxismo (rho= 0,403 e p=0,057.  Conclui-se então, que nesta pesquisa o bruxismo não apresentou relação estatisticamente significante com o grau de apneia do sono, mesmo ele ocorrendo com uma maior predominância em pacientes que possuíam apneia do tipo grave.

SONO-OXIDATIVE PRE-TREATMENT OF WASTE ACTIVATED SLUDGE BEFORE ANAEROBIC BIODEGRADATION

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S. Şahinkaya

Full Text Available Abstract The effects of sonication, potassium ferrate (K2FeO4 oxidation and their simultaneous combination (called "sono-oxidative pre-treatment" on chemical properties and anaerobic digestion of waste activated sludge (WAS were investigated and compared comprehensively. Based on chemical parameters, the optimum operating conditions were found to be 0.3 g K2FeO4/g total solids (TS dosage for 2-h individual K2FeO4 oxidation, 0.50 W/mL ultrasonic power density for 10-min individual sonication and, lastly, the combination of 2.5-min sonication at 0.75 W/mL ultrasonic power density with 2-h chemical oxidation at 0.3 g K2FeO4/g TS dosage for sono-oxidative pre-treatment. The disintegration efficiencies of these methods under the optimized conditions were in the following descending order: 37.8% for sono-oxidative pre-treatment > 26.3% for sonication > 13.1% for K2FeO4 oxidation. The influences of these methods on anaerobic biodegradability were tested with the biochemical methane potential assay. It was seen that the cumulative methane production increased by 9.2% in the K2FeO4 oxidation reactor, 15.8% in the sonicated reactor and 18.6% in the reactor with sono-oxidative pre-treatment, compared to the control (untreated reactor.

Effect of acoustic parameters on the cavitation behavior of SonoVue microbubbles induced by pulsed ultrasound.

Science.gov (United States)

Lin, Yutong; Lin, Lizhou; Cheng, Mouwen; Jin, Lifang; Du, Lianfang; Han, Tao; Xu, Lin; Yu, Alfred C H; Qin, Peng

2017-03-01

SonoVue microbubbles could serve as artificial nuclei for ultrasound-triggered stable and inertial cavitation, resulting in beneficial biological effects for future therapeutic applications. To optimize and control the use of the cavitation of SonoVue bubbles in therapy while ensuring safety, it is important to comprehensively understand the relationship between the acoustic parameters and the cavitation behavior of the SonoVue bubbles. An agarose-gel tissue phantom was fabricated to hold the SonoVue bubble suspension. 1-MHz transmitting transducer calibrated by a hydrophone was used to trigger the cavitation of SonoVue bubbles under different ultrasonic parameters (i.e., peak rarefactional pressure (PRP), pulse repetition frequency (PRF), and pulse duration (PD)). Another 7.5-MHz focused transducer was employed to passively receive acoustic signals from the exposed bubbles. The ultraharmonics and broadband intensities in the acoustic emission spectra were measured to quantify the extent of stable and inertial cavitation of SonoVue bubbles, respectively. We found that the onset of both stable and inertial cavitation exhibited a strong dependence on the PRP and PD and a relatively weak dependence on the PRF. Approximate 0.25MPa PRP with more than 20μs PD was considered to be necessary for ultraharmonics emission of SonoVue bubbles, and obvious broadband signals started to appear when the PRP exceeded 0.40MPa. Moreover, the doses of stable and inertial cavitation varied with the PRP. The stable cavitation dose initially increased with increasing PRP, and then decreased rapidly after 0.5MPa. By contrast, the inertial cavitation dose continuously increased with increasing PRP. Finally, the doses of both stable and inertial cavitation were positively correlated with PRF and PD. These results could provide instructive information for optimizing future therapeutic applications of SonoVue bubbles. Copyright © 2016 Elsevier B.V. All rights reserved.

Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

CERN Document Server

Pereira, LMC; Wahl, U

Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

Strain-controlled nonvolatile magnetization switching

Science.gov (United States)

Geprägs, S.; Brandlmaier, A.; Brandt, M. S.; Gross, R.; Goennenwein, S. T. B.

2014-11-01

We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magnetometry. These measurements demonstrate a significant strain-induced change of the magnetization, limited by an inefficient strain transfer and domain formation in the particular system studied. To overcome these obstacles, we address practicable engineering concepts and use a model to demonstrate that a strain-controlled, nonvolatile magnetization switching should be possible in appropriately engineered ferromagnetic/piezoelectric actuator hybrids.

Real-Time Measurements and Modelling on Dynamic Behaviour of SonoVue Bubbles Based on Light Scattering Technology

International Nuclear Information System (INIS)

Juan, Tu; Rongjue, Wei; Guan, J. F.; Matula, T. J.; Crum, L. A.

2008-01-01

The dynamic behaviour of SonoVue microbubbles, a new generation ultrasound contrast agent, is investigated in real time with light scattering method. Highly diluted SonoVue microbubbles are injected into a diluted gel made of xanthan gum and water. The responses of individual SonoVue bubbles to driven ultrasound pulses are measured. Both linear and nonlinear bubble oscillations are observed and the results suggest that SonoVue microbubbles can generate strong nonlinear responses. By fitting the experimental data of individual bubble responses with Sarkar's model, the shell coating parameter of the bubbles and dilatational viscosity is estimated to be 7.0 nm·s·Pa

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Science.gov (United States)

Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

2015-03-04

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

Comportamentos associados ao sono em estudantes do ensino médio: análises transversal e prospectiva

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Luana Peter Hoefelmann

2014-05-01

Full Text Available DOI: http://dx.doi.org/10.5007/1980-0037.2014v16s1p68 A associação entre comportamentos de saúde e sono tem sido testada em jovens com dados transversais, mas evidências prospectivas são necessárias. O objetivo do estudo foi verificar associações transversais e prospectivas entre variáveis comportamentais e percepções de qualidade e duração de sono. Análise secundária transversal e longitudinal dos dados da pesquisa “Saúde na Boa”, desenvolvido de março a dezembro de 2006, com amostra aleatória de estudantes de ensino médio (14-24 anos de 20 escolas públicas de Recife e Florianópolis. A percepção da qualidade e da duração do sono e as variáveis do estilo de vida foram obtidas por autorrelato. Utilizaram-se regressões logísticas binárias brutas e ajustadas. Nos dados transversais e longitudinais, 45,7% e 45,8% dos jovens relataram má qualidade e 76,7% e 77,5% reportaram duração insuficiente do sono, respectivamente. Na análise transversal, a menor prática de atividade física (OR = 0,74; IC 95%: 0,55; 0,99 e o maior consumo de salgados (OR = 1,67; IC 95%: 1,18; 2,36 estiveram associados à qualidade negativa do sono, enquanto o tempo excessivo de televisão (OR = 0,48; IC 95%: 0,30; 0,75 e de consumo de refrigerantes (OR = 1,84; IC 95%: 1,19; 2,84 associaram-se à duração insuficiente do sono. Na análise prospectiva, nenhum dos comportamentos estudados se manteve associado à qualidade e duração do sono. As prevalências de percepção de qualidade e duração do sono se mantiveram estáveis nos dois momentos analisados. Alguns comportamentos se associaram às percepções de sono em análises transversais, mas estes achados não se confirmaram em análises prospectivas.

Nonvolatile memory design magnetic, resistive, and phase change

CERN Document Server

Li, Hai

2011-01-01

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

Sono, trabalho e estudo: duração do sono em estudantes trabalhadores e não trabalhadores Sleep, work, and study: sleep duration in working and non-working students

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Érico Felden Pereira

2011-05-01

Full Text Available Este estudo objetivou investigar a duração do sono e fatores associados em escolares trabalhadores e não trabalhadores. Foram coletadas informações sobre o padrão do ciclo vigília/sono de 863 adolescentes de 10 a 19 anos em escolas de São Paulo, Brasil. Análises ajustadas foram aplicadas para comparação da duração do sono entre trabalhadores e não trabalhadores. O porcentual de adolescentes trabalhadores foi de 18,4% e 52% dos jovens que trabalhavam apresentaram oito ou menos horas de sono. A prevalência de baixa duração do sono foi maior nos trabalhadores dos sexos masculino (p = 0,017 e feminino (p The aim of this study was to investigate the duration of sleep and associated factors in working and non-working students. Data were analyzed on the sleep-wake cycle in 863 teenage students in São Paulo, Brazil. Adjusted analyses were performed to compare sleep duration in working and non-working students. 18.4% of the group worked, and 52% of the working students slept eight hours or less per night. Prevalence of short sleep duration was higher in working students of both sexes (males, p = 0.017; females, p < 0.001. Working students showed short sleep duration in the analysis adjusted for socioeconomic status, but short sleep was more frequent in older adolescents (p = 0.004 and in lower (p = 0.001 and middle (p = 0.011 socioeconomic classes. Although more working students were in night school, in the model adjusted for gender and socioeconomic status, working students in afternoon courses showed higher prevalence of short sleep duration (PR = 2.53; 95%CI: 1.68-4.12.

Advanced oxidation of Reactive Blue 181 solution: a comparison between Fenton and Sono-Fenton process.

Science.gov (United States)

Basturk, Emine; Karatas, Mustafa

2014-09-01

In this work, the decolorization of C.I. Reactive Blue 181 (RB181), an anthraquinone dye, by Ultrasound and Fe(2+) H2O2 processes was investigated. The effects of operating parameters, such as Fe(2+) dosage, H2O2 dosage, pH value, reaction time and temperature were examined. Process optimisation [pH, ferrous ion (Fe(2+)), hydrogen peroxide (H2O2), and reaction time], kinetic studies and their comparison were carried out for both of the processes. The Sono-Fenton process was performed by indirect sonication in an ultrasonic water bath, which was operated at a fixed 35-kHz frequency. The optimum conditions were determined as [Fe(2+)]=30 mg/L, [H2O2]=50 mg/L and pH=3 for the Fenton process and [Fe(2+)]=10 mg/L, [H2O2]=40 mg/L and pH=3 for the Sono-Fenton process. The colour removals were 88% and 93.5% by the Fenton and Sono-Fenton processes, respectively. The highest decolorization was achieved by the Sono-Fenton process because of the production of some oxidising agents as a result of sonication. The paper also discussed kinetic parameters. The decolorization kinetic of RB181 followed pseudo-second-order reaction (Fenton study) and Behnajady kinetics (Sono-Fenton study). Copyright © 2014 Elsevier B.V. All rights reserved.

A genética dos distúrbios do sono na infância e adolescência

OpenAIRE

Nunes,Magda Lahorgue; Bruni,Oliviero

2008-01-01

OBJETIVO: O objetivo deste artigo é revisar a literatura sobre a genética dos distúrbios do sono na infância e adolescência. FONTES DOS DADOS: As palavras-chave "sono" e "genética" foram usadas para pesquisar por artigos publicados nos últimos cinco anos no banco de dados MEDLINE. A seguir, seus resumos foram analisados. A pesquisa também incluiu artigos clássicos, com a primeira descrição dos genes. SÍNTESE DOS DADOS: A recorrência familiar de muitos distúrbios do sono é um achado freqüente,...

Mecanismos do ciclo sono-vigília Sleep-wake cycle mechanisms

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Flávio Alóe

2005-05-01

Full Text Available Três sub-divisões hipotalâmicas são importantes no ciclo sono-vigília: o hipotálamo anterior (núcleos gabaérgicos e núcleos supraquiasmáticos, o hipotálamo posterior (núcleo túbero-mamilar histaminérgico e o hipotálamo lateral (sistema hipocretinas. O sistema gabaérgico inibitório do núcleo pré-óptico ventro-lateral (VLPO do hipotálamo anterior é responsável pelo início e manutenção do sono NREM. Os neurônios supraquiasmáticos (NSQs do hipotálamo anterior são responsáveis pelo ritmo circadiano do ciclo sono-vigília. Os núcleos aminérgicos, histaminérgicos, as hipocretinas e núcleos colinérgicos do prosencéfalo basal apresentam-se ativos durante a vigília, inibindo o núcleo pré-óptico ventro-lateral, promovendo a vigília. O processo de inibição-estimulação é a base do modelo da interação recíproca entre os grupos de células wake-off-sleep-on e células wake-off-sleep-on reguladores do ciclo sono-vigília. O modelo da interação recíproca também se aplica aos núcleos colinérgicos (células REM-on e aminérgicos (células REM-off do tronco cerebral no controle temporal do sono REM-NREM.Neurochemically distinct systems interact regulating sleep and wakefulness. Wakefulness is promoted by aminergic, acetylcholinergic brainstem and hypothalamic systems. Each of these arousal systems supports wakefulness and coordinated activity is required for alertness and EEG activation. Neurons in the pons and preoptic area control rapid eye movement and non-rapid eye movement sleep. Mutual inhibition between these wake- and sleep-regulating systems generate behavioral states. An up-to-date understanding of these systems should allow clinicians and researchers to better understand the effects of drugs, lesions, and neurologic disease on sleep and wakefulness.

QUALIDADE DE SONO E SUA ASSOCIAÇÃO COM SINTOMAS PSICOLÓGICOS EM ATLETAS ADOLESCENTES

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Gabriel Cordeiro Gomes

Full Text Available RESUMO Objetivo: Verificar a prevalência de má qualidade de sono e sua associação com características pessoais e sintomas de depressão, ansiedade e estresse em adolescentes atletas amadores. Métodos: Foram avaliados 309 adolescentes atletas, entre 10 e 19 anos. Para a coleta de dados foram utilizados: questionário estruturado, contendo informações pessoais; Índice de Qualidade do Sono de Pittsburgh (PSQI; e Escala de Ansiedade, Depressão e Stress de 21 itens (EADS-21. Na análise descritiva foram calculados a média e o desvio padrão das variáveis numéricas e as frequências absolutas e relativas das variáveis categóricas. Para a análise inferencial foram realizados teste t de Student e teste do qui-quadrado, além de regressão de Poisson, sendo calculadas as razões de prevalência (RP em um intervalo de confiança de 95% (IC95%. Resultados: A média de idade dos participantes foi de 14,1±2,1, sendo 13,8±2,0 para o grupo de adolescentes com boa qualidade do sono e 15,0±2,1 para o grupo com má qualidade do sono. A má qualidade do sono foi registrada em 28,2% (n=87, a depressão, em 26,9% (n=83 e a ansiedade/estresse, em 40,1% (n=124 da amostra. A má qualidade do sono se associou à faixa etária de 15 a 19 anos (RP 1,24; IC95% 1,14-1,37, a adolescentes com sobrepeso (RP 1,12; IC95% 1,01-1,24 e com sintomas de depressão (RP 1,23; IC95% 1,08-1,40 e de ansiedade/estresse (RP 1,16; IC95% 1,04-1,28. Conclusões: A presença de sobrepeso e sintomas psicológicos, bem como a idade superior a 15 anos, se mostraram fatores de risco para aumentar a chance da má qualidade do sono em adolescentes atletas.

Distúrbios do sono em adultos de uma cidade do Estado de São Paulo

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Everton Alex Carvalho Zanuto

2015-03-01

Full Text Available OBJETIVO: Analisar a ocorrência de distúrbios relacionados ao sono entre adultos de Presidente Prudente, São Paulo, bem como identificar suas associações com variáveis comportamentais, sociodemográficas e de estado nutricional. MÉTODOS: Após a seleção aleatória da amostra, foram realizadas entrevistas face a face com 743 adultos de ambos os sexos, residentes na cidade de Presidente Prudente, São Paulo. Foram aplicados questionários para análise de distúrbios relacionados ao sono, variáveis sociodemográficas (sexo, idade, etnia, escolaridade, comportamentais (atividade física no lazer, etilismo e tabagismo e de estado nutricional. RESULTADOS: Foram observados distúrbios relacionados ao sono em 46,7% da amostra, com intervalo de confiança de 95% (IC95% 43,1 - 50,2. Após a análise multivariada, foi observado que o sexo feminino, com odds ratio (OR = 1,74 (IC95% 1,26 - 2,40, escolaridade (OR = 0,49; IC95% 0,28 - 0,82, sobrepeso (OR = 1,99; IC95% 1,39 - 2,85 e obesidade (OR = 2,90; IC95% 1,94 - 4,35 foram associados à ocorrência de distúrbios relacionados ao sono. CONCLUSÃO: É elevada a ocorrência de distúrbios de sono na amostra analisada, os quais foram mais frequentes em mulheres, pessoas de menor escolaridade e com sobrepeso e obesidade.

Sono-photo-Fenton oxidation of bisphenol-A over a LaFeO3 perovskite catalyst.

Science.gov (United States)

Dükkancı, Meral

2018-01-01

In this study, oxidation of bisphenol-A (IUPAC name - 2,2-(4,4-dihydroxyphenyl, BPA), which is an endocrine disrupting phenolic compound used in the polycarbonate plastic and epoxy resin industry, was investigated using sono-photo-Fenton process under visible light irradiation in the presence of an iron containing perovskite catalyst, LaFeO 3 . The catalyst prepared by sol-gel method, calcined at 500°C showed a catalytic activity in BPA oxidation using sono-photo-Fenton process with a degradation degree and a chemical oxygen demand (COD) reduction of 21.8% and 11.2%, respectively. Degradation of BPA was studied by using individual and combined advanced oxidation techniques including sonication, heterogeneous Fenton reaction and photo oxidation over this catalyst to understand the effect of each process on degradation of BPA. It was seen, the role of sonication was very important in hybrid sono-photo-Fenton process due to the pyrolysis and sonoluminescence effects caused by ultrasonic irradiation. The prepared LaFeO 3 perovskite catalyst was a good sonocatalyst rather than a photocatalyst. Sonication was not only the effective process to degrade BPA but also it was the cost effective process in terms of energy consumption. The studies show that the energy consumption is lower in the sono-Fenton process than those in the photo-Fenton and sono-photo- Fenton processes. Copyright © 2017 Elsevier B.V. All rights reserved.

Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

Science.gov (United States)

Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

2018-06-10

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

International Nuclear Information System (INIS)

Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

2013-01-01

Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

TEMPO DE TELA, PERCEPÇÃO DA QUALIDADE DE SONO E EPISÓDIOS DE PARASSONIA EM ADOLESCENTES

Directory of Open Access Journals (Sweden)

Alison Oliveira da Silva

Full Text Available RESUMO Introdução: O sono é um importante componente no processo de desenvolvimento biológico e mental das crianças e dos adolescentes, considerado fonte de revitalização das funções orgânicas. Objetivo: Analisar a associação entre o tipo e tempo de exposição à tela, a percepção da qualidade de sono e os episódios de parassonia em adolescentes. Métodos: Estudo transversal que incorpora um levantamento epidemiológico de base escolar com amostra representativa (n = 481 de estudantes (14 a 19 anos do ensino médio da rede pública estadual do município de Caruaru, PE. Para a análise do sono e do estilo de vida, foi utilizada a versão traduzida e adaptada do Global School-Based Student Health Survey (GSHS. Recorreu-se à regressão logística binária para análise da associação entre as variáveis, considerando-se como desfecho a percepção negativa da qualidade de sono. Resultados: A prevalência de percepção negativa da qualidade de sono foi de 58% (IC 95% 53,5-62,3. Entre os comportamentos analisados, verificou-se que dormir oito horas ou menos por dia e assistir mais de duas horas de TV por dia aumentam, respectivamente, 2,69 (IC 95% 1,61-4,71 e 1,71 (IC 95% 1,08-2,73 as chances de relatar percepção negativa de sono. O tempo excessivo de tela, sobretudo diante da TV, esteve associado à maior quantidade de episódios de parassonia. Conclusão: A qualidade do sono está relacionada tanto com a quantidade de horas de sono, quanto com o tempo de exposição à TV. Além disso, uma quantidade maior de episódios de parassonia ocorreu entre os adolescentes que assistem mais de três horas de TV por dia.

Method for refreshing a non-volatile memory

Science.gov (United States)

Riekels, James E.; Schlesinger, Samuel

2008-11-04

A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

Optimized ONO thickness for multi-level and 2-bit/cell operation for wrapped-select-gate (WSG) SONOS memory

International Nuclear Information System (INIS)

Wu, Woei-Cherng; Chao, Tien-Sheng; Yang, Tsung-Yu; Peng, Wu-Chin; Yang, Wen-Luh; Chen, Jian-Hao; Ma, Ming Wen; Lai, Chao-Sung; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; Chen, Tzu Ping; Chen, Chien Hung; Lin, Chih Hung; Chen, Hwi Huang; Ko, Joe

2008-01-01

In this paper, highly reliable wrapped-select-gate (WSG) silicon–oxide–nitride–oxide–silicon (SONOS) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism for WSG-SONOS memory with different ONO thickness was thoroughly investigated. The different programming efficiencies of the WSG-SONOS memory under different ONO thicknesses are explained by the lateral electrical field extracted from the simulation results. Furthermore, multi-level storage is easily obtained, and good V TH distribution presented, for the WSG-SONOS memory with optimized ONO thickness. High program/erase speed (10 µs/5 ms) and low programming current (3.5 µA) are used to achieve the multi-level operation with tolerable gate and drain disturbance, negligible second-bit effect, excellent data retention and good endurance performance

Trabalho em turnos: estado geral de saúde relacionado ao sono em trabalhadores de enfermagem

Directory of Open Access Journals (Sweden)

Sandra Soares Mendes

2012-12-01

Full Text Available O objetivo deste estudo foi identificar os sintomas referentes ao estado geral de saúde associado ao trabalho em turnos de enfermagem e relacioná-los com a qualidade do sono. O estudo foi realizado no Hospital da Irmandade da Santa Casa de Poços de Caldas, Minas Gerais. Participaram 136 profissionais de enfermagem, com média de idade de 33,1 anos, divididos nas seguintes categorias: enfermeiro (8,1%; técnico de enfermagem (80,9%; auxiliar de enfermagem dos turnos diurno e noturno (11%. Os sintomas de saúde foram identificados a partir do Inventário de Estado Geral de Saúde, e a qualidade do sono foi avaliada pelo Diário do Sono. Os dados foram estatisticamente significativos pelo Teste Qui-Quadrado (p=0,021 para a presença do sintoma de flatulência ou distensão abdominal no turno noturno. Constatou-se com a análise de regressão linear múltipla que os sujeitos do turno diurno que apresentaram os sintomas de má digestão (às vezes ou sempre e irritabilidade (sempre tiveram pior qualidade de sono noturno.

Clinical utility of a microbubble-enhancing contrast (“SonoVue”) in treatment of uterine fibroids with high intensity focused ultrasound: A retrospective study

International Nuclear Information System (INIS)

Peng, Song; Xiong, Yu; Li, Kequan; He, Min; Deng, Yongbin; Chen, Li; Zou, Min; Chen, Wenzhi; Wang, Zhibiao; He, Jia

2012-01-01

Purpose: To evaluate the clinical value of the contrast agent SonoVue in the treatment of uterine fibroids with ultrasound-guided high intensity focused ultrasound (HIFU) therapeutic ablation. Materials and Methods: A total of 291 patients with solitary uterine fibroid from three centers were treated with ultrasound-guided HIFU. Among them, 129 patients from Suining Central Hospital of Sichuan were treated without using SonoVue. 162 patients from the First Hospital of Chongqing Medical University and Chongqing Haifu Hospital were treated with using SonoVue before, during and after HIFU procedure to assess the extent of HIFU. Results: The non-perfused volume (indicative of successful ablation) was observed in all treated uterine fibroids immediately after HIFU ablation; median fractional ablation, defined as non-perfused volume divided by the fibroid volume immediately after HIFU treatment, was 86.0% (range, 28.8–100.0%) in the group with using SonoVue, and 83.0% (8.7–100.0%) without SonoVue. The rate of massive gray scale changes was higher with SonoVue than without the agent. The sonication time to achieve massive gray scale changes was shorter with SonoVue than without. The sonication time for ablating 1 cm 3 of fibroid volume was significantly shorter with using SonoVue than without. No major complications were observed in any patients. Conclusions: Based on our results, SonoVue may enhance the outcome of HIFU ablation and can be used to assess the extent of treatment.

Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France); Spiegel, Y.; Torregrosa, F. [IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France); Normand, P.; Dimitrakis, P.; Kapetanakis, E. [NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece); Sahu, B. S.; Slaoui, A. [ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)

2013-12-16

Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

Estudo do sono e função pulmonar em pacientes obesos mórbidos

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Isabella de Carvalho Aguiar

Full Text Available INTRODUÇÃO: A obesidade acarreta uma série de alterações na fisiologia respiratória e no sono. Seu tratamento tem como objetivo a melhora da saúde e da qualidade de vida. OBJETIVO: Avaliar a função pulmonar e o sono em indivíduos obesos mórbidos pré-cirurgia bariátrica. MATERIAIS E MÉTODOS: Participaram deste estudo 38 pacientes, recrutados em dois serviços de cirurgia bariátrica e encaminhados ao Laboratório de Sono da Universidade Nove de Julho, São Paulo, Brasil. Os critérios de inclusão foram: obesos mórbidos, IMC entre 40 kg/m² e 50 kg/m² e IMC entre 35 kg/m² a 39,9 kg/m² se associados a comorbidades. RESULTADOS: A média de idade foi de 42 ± 10, o índice de massa corpórea médio foi de 50,09 ± 7,64. A média da circunferência abdominal foi de 132,48 ±11,07 e 134,31 ± 16,26 e de pescoço foi 42,34 ± 2,08 e 44,48 ± 3,67, respectivamente para mulheres e homens. As pressões máximas inspiratórias foram 57,57 ± 18,93 e 60,6 ± 3,72 e máximas expiratórias 56,63 ± 16,68 e 60 ± 18,52, para mulheres e homens respectivamente. O sono do movimento rápido dos olhos apresentou-se com média de 16,93 ± 13,61 e a saturação mínima da oxi-hemoglobina foi de 79,33 ± 10,26 durante o sono. Em 44,74% dos casos examinados, foram observadas alterações na Escala de Sonolência de Epworth (ESE; e em 76,3% ficou confirmada a presença de síndrome da apneia obstrutiva do sono (SAOS. CONCLUSÃO: Foram observadas alterações nas pressões máximas ventilatórias, na estrutura do sono associadas a considerável dessaturação noturna da oxi-hemoglobina, o que evidencia alta prevalência de SAOS nos pacientes obesos mórbidos.

Biophysical Evaluation of SonoSteam®:

DEFF Research Database (Denmark)

Andersen, Ann Zahle; Duelund, Lars; Brewer, Jonathan R.

and safety evaluations. Our results show that there are no contradictions between data obtained by either approach. However, the biophysical methods draw a much more nuanced picture of the effects and efficiency of the investigated decontamination method, revealing e.g. an exponential dose/response...... relationship between SonoSteam treatment time and changes in collagen I, and a depth dependency in bacterial reduction, which points toward CFU counts overestimating total bacterial reduction. In conclusion the biophysical methods provide a less biased, reproducible and highly detailed system description...

Improvement in mechanical properties of hypereutectic Al-Si-Cu alloys through sono-solidiifed slurry

Institute of Scientific and Technical Information of China (English)

Yoshiki Tsunekawa; Shinpei Suetsugu; Masahiro Okumiya; Naoki Nishikawa; Yoshikazu Genma

2014-01-01

For the wider applications, it is necessary to improve the ductility as wel as the strength and wear-resistance of hypereutectic Al-Si-Cu aloys, which are typical light-weight wear-resistant materials. An increase in the amounts of primary silicon particles causes the modiifed wear-resistance of hypereutectic Al-Si-Cu aloys, but leads to the poor strength and ductility. It is known that dual phase steels composed of hetero-structure have succeeded in bringing contradictory mechanical properties of high strength and ductility concurrently. In order to apply the idea of hetero-structure to hypereutectic Al-Si-Cu alloys for the achievement of high strength and ductility along with wear resistance, ultrasonic irradiation of the molten metal during the solidiifcation, which is caled sono-solidiifcation, was carried out from its molten state to just above the eutectic temperature. The sono-solidiifed Al-17Si-4Cu aloy is composed of hetero-structure, which are, hard primary silicon particles, soft non-equilibriuma-Al phase and the eutectic region. Rheo-casting was performed at just above the eutectic temperature with sono-solidiifed slurry to shape a disk specimen. After the rheo-casting with modiifed sono-solidiifed slurry held for 45 s at 570 ºC, the quantitative optical microscope observation exhibits that the microstructure is composed of 18area% of hard primary silicon particles and 57area% of softa-Al phase. In contrast, there exist only 5 area% of primary silicon particles and noa-Al phase in rheo-cast specimen with normaly solidiifed slurry. Hence the tensile tests of T6 treated rheo-cast specimens with modified sono-solidified slurry exhibit improved strength and 5% of elongation, regardless of having more than 3 times higher amounts of primary silicon particles compared to that of rheo-cast specimen with normaly solidiifed slurry.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Electrostatically telescoping nanotube nonvolatile memory device

International Nuclear Information System (INIS)

Kang, Jeong Won; Jiang Qing

2007-01-01

We propose a nonvolatile memory based on carbon nanotubes (CNTs) serving as the key building blocks for molecular-scale computers and investigate the dynamic operations of a double-walled CNT memory element by classical molecular dynamics simulations. The localized potential energy wells achieved from both the interwall van der Waals energy and CNT-metal binding energy make the bistability of the CNT positions and the electrostatic attractive forces induced by the voltage differences lead to the reversibility of this CNT memory. The material for the electrodes should be carefully chosen to achieve the nonvolatility of this memory. The kinetic energy of the CNT shuttle experiences several rebounds induced by the collisions of the CNT onto the metal electrodes, and this is critically important to the performance of such an electrostatically telescoping CNT memory because the collision time is sufficiently long to cause a delay of the state transition

Qualidade do sono e marcadores endócrinos e bioquímicos

OpenAIRE

Carvalho, Ana Sofia Coelho de; Fernandes, Adília; Belen Gallego, Ana; Vaz, Josiana A.; Sierra Vega, Matilde

2016-01-01

O sono e o repouso constituem o ritmo biológico base da espécie humana e são fundamentais para uma boa saúde e qualidade de vida, com especial significado em crianças e jovens (DGS, 2015). Dormir bem é fundamental para a recuperação física e psíquica do indivíduo, indispensável para sermos saudáveis e essencial para nos mantermos ativos, concentrados e bem-dispostos. O sono é um equilibrador do humor e das emoções, recupera o corpo e a memória, estimula a criatividade e aumenta e consolida a ...

ÍNDICE DA QUALIDADE DO SONO DE PITTSBURGH PARA USO NA REABILITAÇÃO CARDIOPULMONAR E METABÓLICA

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Pablo Antonio Bertasso de Araujo

2015-12-01

Full Text Available Introdução A qualidade do sono constitui-se em parâmetro relevante na avaliação da saúde em geral, sendo um fator relevante na determinação do risco das doenças cardiovasculares. Objetivo Validar a versão adaptada do questionário de avaliação do Índice de Qualidade do Sono de Pittsburgh (PSQI para uso em programas de reabilitação cardiopulmonar e metabólica (RCPM. Métodos Estudo descritivo transversal realizado com 101 pacientes de ambos os sexos, com média de idade de 66,05 (± 13,9 anos. Para a análise estatística foi considerado intervalo de confiança de 95% e valor de significância p <0,05; para a análise de consistência interna foi utilizado o coeficiente de alfa de Cronbach e para a análise da relação entre componentes e itens com o escore total do questionário foi utilizado o coeficiente de correlação de Spearman. Resultados Todos os componentes do questionário apresentaram boa consistência interna com valor de 0,72. Os componentes que mais se relacionaram com o escore total foram "duração do sono" e "qualidade subjetiva do sono", sendo que o componente que menos se relacionou foi "alterações do sono". Dentre os itens a variação foi de 0,584 no item "durante a última semana, em geral, como você classificaria a qualidade do seu sono?", até -0,611 no item "durante a última semana, quantas horas você conseguia dormir durante a noite?". Foi possível observar que os itens "tossir ou roncar muito alto" e "frequência para dificuldades do sono por outras razões" não apresentaram correlação com o escore total do questionário. Conclusão A versão adaptada do PSQI mostrou-se válida para ser utilizada na avaliação do sono em programas de RCPM.

IMPLICAÇÕES DOS DISTÚRBIOS RESPIRATÓRIOS DO SONO EM ALUNOS COM DEFICIÊNCIA INTELECTUAL: REVISÃO SISTEMÁTICA

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Miriam Adalgisa Bedim Godoy

2017-06-01

Full Text Available Nos últimos anos, as pesquisas sobre os distúrbios respiratórios do sono em crianças e adolescentes com desenvolvimento típico têm ampliado. As pesquisas constataram que o sono de má qualidade interfere nas competências físicas e intelectivas do ser humano. Como seria a influência desse distúrbio em educandos com deficiência intelectual? O estudo teve por objetivo verificar e analisar nas publicações científicas a influência dos distúrbios respiratórios do sono em escolares com deficiência intelectual. Trata-se um delineamento sistemático de cunho qualitativo. O levantamento foi realizado no período que compreende os anos de 2000 a 2016. Os artigos estavam indexados bases de dados EBSCOhost, DOAJ, ERIC e SciELO Brasil. Os descritores utilizados foram i distúrbios respiratórios do sono e dificuldade de aprendizagem; ii distúrbios respiratórios do sono e deficiência intelectual; iii distúrbios respiratórios do sono e etiologia da deficiência intelectual; iv distúrbios respiratórios do sono e déficit intelectual. A busca também foi realizada em língua inglesa, a saber: i sleep-disordered breathing and learning disability; ii sleep-disordered breathing and Intellectual disability; iii sleep-disordered breathing and Etiology intellectual disability; iv sleep-disordered breathing and Intellectual deficit. Com base nesses descritores, foram encontradas 43 pesquisas. Entretanto, considerando-se os requisitos elegidos para este estudo, apenas sete artigos compuseram o corpus final de análise. Desses, quatro eram estudos experimentais, dois de revisões de literatura e um do tipo longitudinal. As pesquisas revelaram que a influência dos distúrbios do sono junto às crianças e aos adolescentes com deficiência intelectual é recente e limitada, porém, tais distúrbios respiratórios do sono interferem significativamente na qualidade de vida, bem como nos aspectos de desenvolvimento e aprendizagem dos alunos com defici

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

Science.gov (United States)

Jie, Wenjing; Hao, Jianhua

2014-06-21

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao

2013-01-01

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures

O plantão noturno em anestesia reduz a latência ao sono

OpenAIRE

Mathias, Lígia Andrade da Silva Telles; Coelho, Christina Morotomi Funatsu; Vilela, Elizabeth Pricoli; Vieira, Joaquim Edson; Pagnocca, Marcelo Lacava

2004-01-01

JUSTIFICATIVA E OBJETIVOS: Os médicos em geral, os anestesiologistas em particular, têm jornadas de trabalho prolongadas. Os residentes de Anestesiologia podem apresentar fadiga e estresse significativos. O objetivo deste trabalho foi verificar, em residentes de primeiro e segundo anos a latência do sono em períodos após plantão. MÉTODO: Foram avaliados 11 residentes em situações distintas: às 7 horas da manhã, após noite de sono normal (> 7h), sem plantão nos 3 dias anteriores (M1); às 7 hor...

Sono-electro-magnetic therapy for treating chronic pelvic pain syndrome in men: a randomized, placebo-controlled, double-blind trial.

Directory of Open Access Journals (Sweden)

Thomas M Kessler

Full Text Available OBJECTIVE: To assess the efficacy and safety of sono-electro-magnetic therapy compared to placebo in men with refractory CPPS. PATIENTS AND METHODS: In a randomized, placebo-controlled, double-blind single center trial, we assessed the effect of sono-electro-magnetic therapy in men with treatment refractory CPPS. Sixty male patients were randomly assigned to treatment with either sono-electro-magnetic (n = 30 or placebo therapy (n = 30 for 12 weeks. The primary outcome was a change in the National Institutes of Health Chronic Prostatitis Symptom Index (NIH-CPSI from baseline to 12 weeks. RESULTS: The 12-week difference between sono-electro-magnetic and placebo therapy in changes of the NIH-CPSI total score was -3.1 points (95% CI -6.8 to 0.6, p = 0.11. In secondary comparisons of NIH-CPSI sub-scores, we found differences between groups most pronounced for the quality-of-life sub-score (difference at 12 weeks -1.6, 95% CI -2.8 to -0.4, p = 0.015. In stratified analyses, the benefit of sono-electro-magnetic therapy appeared more pronounced among patients who had a symptom duration of 12 months or less (difference in NIH-CPSI total score -8.3, 95% CI -14.5 to 2.6 than in patients with a longer symptom duration (-0.8, 95% CI -4.6 to 3.1; p for interaction = 0.023. CONCLUSIONS: Sono-electro-magnetic therapy did not result in a significant improvement of symptoms in the overall cohort of treatment refractory CPPS patients compared to placebo treatment. Subgroup analysis indicates, however, that patients with a symptom-duration of 12 months or less may benefit from sono-electro-magnetic therapy, warranting larger randomized controlled trials in this subpopulation. TRIAL REGISTRATION: ClinicalTrials.gov NCT00688506.

Sono-electro-magnetic therapy for treating chronic pelvic pain syndrome in men: a randomized, placebo-controlled, double-blind trial.

Science.gov (United States)

Kessler, Thomas M; Mordasini, Livio; Weisstanner, Christian; Jüni, Peter; da Costa, Bruno R; Wiest, Roland; Thalmann, George N

2014-01-01

To assess the efficacy and safety of sono-electro-magnetic therapy compared to placebo in men with refractory CPPS. In a randomized, placebo-controlled, double-blind single center trial, we assessed the effect of sono-electro-magnetic therapy in men with treatment refractory CPPS. Sixty male patients were randomly assigned to treatment with either sono-electro-magnetic (n = 30) or placebo therapy (n = 30) for 12 weeks. The primary outcome was a change in the National Institutes of Health Chronic Prostatitis Symptom Index (NIH-CPSI) from baseline to 12 weeks. The 12-week difference between sono-electro-magnetic and placebo therapy in changes of the NIH-CPSI total score was -3.1 points (95% CI -6.8 to 0.6, p = 0.11). In secondary comparisons of NIH-CPSI sub-scores, we found differences between groups most pronounced for the quality-of-life sub-score (difference at 12 weeks -1.6, 95% CI -2.8 to -0.4, p = 0.015). In stratified analyses, the benefit of sono-electro-magnetic therapy appeared more pronounced among patients who had a symptom duration of 12 months or less (difference in NIH-CPSI total score -8.3, 95% CI -14.5 to 2.6) than in patients with a longer symptom duration (-0.8, 95% CI -4.6 to 3.1; p for interaction = 0.023). Sono-electro-magnetic therapy did not result in a significant improvement of symptoms in the overall cohort of treatment refractory CPPS patients compared to placebo treatment. Subgroup analysis indicates, however, that patients with a symptom-duration of 12 months or less may benefit from sono-electro-magnetic therapy, warranting larger randomized controlled trials in this subpopulation. ClinicalTrials.gov NCT00688506.

Horas de sono e índice de massa corporal em pré-escolares do sul do Brasil

Directory of Open Access Journals (Sweden)

Maria Laura da Costa Louzada

2012-12-01

Full Text Available A prevenção e o tratamento do excesso de peso são particularmente complexos, reforçando a importância de estudos que visem esclarecer sua rede de causas e efeitos. Assim, o objetivo desse estudo foi avaliar a relação entre horas de sono noturnas e medidas antropométricas. Realizou-se uma análise transversal realizada a partir de dados de 348 crianças de 3 e 4 anos da cidade de São Leopoldo/ RS. As horas de sono noturnas foram relatadas pelas mães e as medidas de índice de massa corporal, circunferência da cintura e dobras cutâneas foram medidas de acordo com protocolo padrão. As análises foram ajustadas para consumo energético e horas de televisão assistidas. As crianças com excesso de peso apresentaram, em média, 0,39 horas a menos de sono em relação àquelas com peso adequado (9,77 ± 1,44 versus 10,17 ± 1,34; IC95% 0,03-0,76. Observou-se associação inversa entre horas de sono noturnas e valores de escore z de índice de massa corporal para idade (B = -0,12 IC95% -0,22--0,02. A circunferência da cintura e as dobras cutâneas apresentaram relação inversa com as horas de sono, porém sem diferença estatística. Em pré-escolares do sul do Brasil, menos horas de sono noturnas foram associadas com maiores valores de índice de massa corporal.

Le soluzioni di logistica urbana sono sostenibili? L'esempio di Cityporto

Directory of Open Access Journals (Sweden)

Jesus Gonzalez-Feliu

2010-07-01

Full Text Available La logistica urbana è un campo di riflessione volto ad approfondire le soluzioni ottimali per la distribuzione delle merci in ambito urbano e i relativi obiettivi ambientali. Ad oggi, molte azioni sono state intraprese dalle pubbliche autorità senza tenere conto, tuttavia, degli impatti che i nuovi schemi organizzativi possono avere sull’ attuale organizzazione delle imprese. Il contributo incentra la riflessione sul caso studio relativo alla città di Padova, in Italia: il sistema di logistica urbana CityPorto. In particolare, se ne analizzano le caratteristiche dal punto di vista della sostenibilità del sistema proposto, sia in riferimento alla dimensione imprenditoriale che a quella collettiva, mettendo in relazione le peculiarità della logistica urbana e le più estese catene distributive, di scala globale, di cui le prime sono parte integrante.

Perfil cardiovascular em pacientes com apneia obstrutiva do sono

Directory of Open Access Journals (Sweden)

Fátima Dumas Cintra

2011-04-01

Full Text Available FUNDAMENTO: Apneia Obstrutiva do Sono (AOS é um fator de risco para várias condições cardiovasculares incluindo aumento na mortalidade cardiovascular. Sendo assim, é essencial o conhecimento das principais repercussões cardiovasculares dos distúrbios respiratórios do sono durante uma avaliação clínica. OBJETIVO: Analisar as características cardiovasculares de pacientes com AOS. MÉTODOS: Pacientes submetidos a polissonografia basal foram consecutivamente selecionados do banco de dados do Instituto do Sono entre março de 2007 e março de 2009. Todos os pacientes foram orientados a comparecer ao ambulatório para coleta de sangue, exame físico, eletrocardiograma de 12 derivações, espirometria, teste cardiopulmonar em esteira ergométrica e ecocardiograma transtorácico. O estudo foi aprovado pelo comitê de ética e pesquisa e registrado no site http://clinicaltrials.gov/ sob o número: NCT00768625. RESULTADOS: Foram analisados 261 pacientes e 108 controles. As principais características dos pacientes com AOS foram: obesidade, hipertensão, baixos níveis plasmáticos de lipoproteínas de alta densidade (HDL e aumento no diâmetro do átrio esquerdo quando comparados com controles (3,75 ± 0,42; 3,61 ± 0,41, p = 0,001, respectivamente. Essas características associadas correspondem a um acréscimo de 16,6 vezes na probabilidade de ocorrência de AOS independentemente do relato de algum sintoma dessa desordem, como sonolência ou ronco. CONCLUSÃO: Na amostra avaliada, o perfil cardiovascular dos pacientes com AOS mais encontrado foi: obesidade, hipertensão arterial, baixos níveis plasmáticos de HDL e átrio esquerdo com diâmetro aumentado.

Melhora da dor, do cansaço e da qualidade subjetiva do sono por meio de orientações de higiene do sono em pacientes com fibromialgia Improvement in pain, fatigue, and subjective sleep quality through sleep hygiene tips in patients with fibromyalgia

OpenAIRE

Aline Cristina Orlandi; Camila Ventura; Andrea Lopes Gallinaro; Renata Alqualo Costa; Laís Verderame Lage

2012-01-01

OBJETIVO: Avaliar a efetividade das orientações para higiene do sono em mulheres portadoras de fibromialgia. MATERIAIS E MÉTODOS: Setenta mulheres completaram o estudo. Na avaliação foram aplicados o Questionário de Impacto da Fibromialgia(FIQ), o Índice de Qualidade do Sono de Pittsburgh (PSQI) e um questionário geral, com dados pessoais e informações de hábitos de vida. Todas as pacientes receberam informações quanto à doença, além de um diário do sono, e apenas o grupo-experimental recebeu...

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

Science.gov (United States)

Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

2018-02-01

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

Sono assisted electrocoagulation process for the removal of pollutant from pulp and paper industry effluent.

Science.gov (United States)

Asaithambi, P; Aziz, Abdul Raman Abdul; Sajjadi, Baharak; Daud, Wan Mohd Ashri Bin Wan

2017-02-01

In the present work, the efficiency of the sonication, electrocoagulation, and sono-electrocoagulation process for removal of pollutants from the industrial effluent of the pulp and paper industry was compared. The experimental results showed that the sono-electrocoagulation process yielded higher pollutant removal percentage compared to the sonication and electrocoagulation process alone. The effect of the operating parameters in the sono-electrocoagulation process such as electrolyte concentration (1-5 g/L), current density (1-5 A/dm 2 ), effluent pH (3-11), COD concentration (1500-6000 mg/L), inter-electrode distance (1-3 cm), and electrode combination (Fe and Al) on the color removal, COD removal, and power consumption were studied. The maximum color and COD removal percentages of 100 and 95 %, respectively, were obtained at the current density of 4 A/dm 2 , electrolyte concentration of 4 g/L, effluent pH of 7, COD concentration of 3000 mg/L, electrode combination of Fe/Fe, inter-electrode distance of 1 cm, and reaction time of 4 h, respectively. The color and COD removal percentages were analyzed by using an UV/Vis spectrophotometer and closed reflux method. The results showed that the sono-electrocoagulation process could be used as an efficient and environmental friendly technique for complete pollutant removal.

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Science.gov (United States)

Cheung, Heidi H. Y.; Tan, Haobo; Xu, Hanbing; Li, Fei; Wu, Cheng; Yu, Jian Z.; Chan, Chak K.

2016-07-01

Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental carbon (OC / EC) analyzer. Low volatility (LV) particles, with a volatility shrink factor (VSF) at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11-15 % of the 80-300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4 transported at low altitudes (below 1500 m) for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the sum of EC and non-volatile OC was conducted. It suggests that non-volatile OC, in addition to EC, was one of the components of the non-volatile residuals measured by the VTDMA in this study.

Evaluation of Recent Technologies of Nonvolatile RAM

Science.gov (United States)

Nuns, Thierry; Duzellier, Sophie; Bertrand, Jean; Hubert, Guillaume; Pouget, Vincent; Darracq, FrÉdÉric; David, Jean-Pierre; Soonckindt, Sabine

2008-08-01

Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.

Comparison of Fenton and sono-Fenton bisphenol A degradation

International Nuclear Information System (INIS)

Ioan, Iordache; Wilson, Steven; Lundanes, Elsa; Neculai, Aelenei

2007-01-01

Degradation of bisphenol A (BPA) was carried out with the Fenton reagent with and without additional sonochemical treatment. The Fenton and the sono-Fenton decomposition of BPA showed that ultrasound irradiation of wastewater improved the wet oxidation process of 25 mg l -1 BPA solutions. The sonochemical degradation of BPA was monitored using UV absorption and large volume injection packed capillary LC measurements

SONOS memories with embedded silicon nanocrystals in nitride

International Nuclear Information System (INIS)

Liu, Mei-Chun; Chiang, Tsung-Yu; Chao, Tien-Sheng; Kuo, Po-Yi; Lei, Tan-Fu; Chou, Ming-Hong; Wu, Yi-Hong; Cheng, Ching-Hwa; Liu, Sheng-Hsien; Yang, Wen-Luh; You, Hsin-Chiang

2008-01-01

We have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride. This new structure exhibits excellent characteristics in terms of larger memory windows and longer retention time compared to control devices. Using the same thickness 2.5 nm of the bottom tunneling oxide, we found that N 2 O is better than O 2 oxide. Retention property is improved when the thickness of N 2 O is increased to 3.0 nm

Improvement in mechanical properties of hypereutectic Al-Si-Cu alloys through sono-solidified

Directory of Open Access Journals (Sweden)

Yoshiki Tsunekawa

2014-07-01

Full Text Available For the wider applications, it is necessary to improve the ductility as well as the strength and wear-resistance of hypereutectic Al-Si-Cu alloys, which are typical light-weight wear-resistant materials. An increase in the amounts of primary silicon particles causes the modified wear-resistance of hypereutectic Al-Si-Cu alloys, but leads to the poor strength and ductility. It is known that dual phase steels composed of hetero-structure have succeeded in bringing contradictory mechanical properties of high strength and ductility concurrently. In order to apply the idea of hetero-structure to hypereutectic Al-Si-Cu alloys for the achievement of high strength and ductility along with wear resistance, ultrasonic irradiation of the molten metal during the solidification, which is called sono-solidification, was carried out from its molten state to just above the eutectic temperature. The sono-solidified Al-17Si-4Cu alloy is composed of hetero-structure, which are, hard primary silicon particles, soft non-equilibrium a -Al phase and the eutectic region. Rheo-casting was performed at just above the eutectic temperature with sono-solidified slurry to shape a disk specimen. After the rheo-casting with modified sonosolidified slurry held for 45 s at 570 篊, the quantitative optical microscope observation exhibits that the microstructure is composed of 18area% of hard primary silicon particles and 57area% of soft a -Al phase. In contrast, there exist only 5 area% of primary silicon particles and no a -Al phase in rheo-cast specimen with normally solidified slurry. Hence the tensile tests of T6 treated rheo-cast specimens with modified sono-solidified slurry exhibit improved strength and 5% of elongation, regardless of having more than 3 times higher amounts of primary silicon particles compared to that of rheo-cast specimen with normally solidified slurry.

Transparent Oxide Semiconductors for Emerging Electronics

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2013-11-01

Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

Role of Non-Volatile Memories in Automotive and IoT Markets

Science.gov (United States)

2017-03-01

Standard Manufacturing Supply Long Term Short to Medium Term Density Up to 16MB Up to 2MB IO Configuration Up to x128 Up to x32 Design for Test...Role of Non-Volatile Memories in Automotive and IoT Markets Vipin Tiwari Director, Business Development and Product Marketing SST – A Wholly Own...microcontrollers (MCU) and certainly one of the most challenging elements to master. This paper addresses the role of non-volatile memories for

Organic Nonvolatile Memory Devices Based on Ferroelectricity

NARCIS (Netherlands)

Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Organic nonvolatile memory devices based on ferroelectricity

NARCIS (Netherlands)

Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

International Nuclear Information System (INIS)

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

2010-01-01

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

Science.gov (United States)

Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

2011-08-01

This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

Privação de sono total na doença de Parkinson

Directory of Open Access Journals (Sweden)

Paulo H. F. Bertolucci

1987-09-01

Full Text Available Doze pacientes com doença de Parkinson (DP foram submetidos a privação de sono total. A média de idade dos pacientes era 61 anos e a duração da doença era em média de 5,1 anos (1,5 a 12 anos. Quatro deles usavam apenas anticolinérgico, 4 usavam L-Dopa e 4 combinação de drogas de ambos os grupos. Após privação de sono total por uma única noite foi verificada melhora na rigidez, bradicinesia, alterações de postura e marcha e incapacidade funcional com duração de duas semanas, em comparação com os escores quando da inclusão no estudo. Não foi observado efeito sobre o tremor. Em relação aos sintomas depressivos foi verificada melhora com duração de apenas uma semana. Estes resultados sugerem efeito benéfico da privação de sono na DP. Com base em estudos experimentais julgamos que uma explicação possível para estes resultados seja a modificação de receptores dopaminérgicos.

Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices

International Nuclear Information System (INIS)

Yang, M; Bao, D H; Li, S W

2013-01-01

Memristive devices are triggering innovations in the fields of nonvolatile memory, digital logic, analogue circuits, neuromorphic engineering, and so on. Creating new memristive devices with unique characteristics would be significant for these emergent applications. Here we report the coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO 3 (NSTO)/In memristive devices. The Pt/NSTO interface contributes a nonvolatile resistive switching behaviour, whereas the NSTO/In interface displays a volatile hysteresis loop. Combining the two interfaces in the Pt/NSTO/In devices leads to the unique coexistence of nonvolatility and volatility. The results imply more opportunities to invent new memristive devices by engineering both interfaces in metal/insulator/metal structures. (paper)

EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

Science.gov (United States)

Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

2011-06-01

Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

Sono-Guided Percutaneous Automated Gun Biopsy in Pediatric Renal Disease

International Nuclear Information System (INIS)

Kim, Jong Chul

1996-01-01

To evaluate whether sono-guided percutaneous automated gun biopsy is also useful in pediatricpatients with renal diseases. In the prone position of twenty pediatric patients with renal parenchymal diseases, percutaneous biopsy was done through lateral aspect of the lower pole of left kidney with automated biopsy gun under the guidance of ultrasonography. The biopsy needle was either of 18 or 20 gauge. The obtained core of renal tissue was examined with light, immunofluorescent or electron microscope by the renal pathologist. In 18 among 20 patients, adequate renal tissue core sufficient to be pathologically diagnosed was obtained. The histologic findings were as follows : IG A nephropathy (n = 2), lupus nephritis (n =2), minimal change glomerulonephritis (n = 5), membranoproliferative glomerulonephritis (n = 3), mesangialproliferative glomeru-lonephritis (n = 1), diffuse proliferative glomerulonephritis (n = 3), focalglomerulo-sclerosis (n = 1), membranous glomerulopathy (n = 1). No significant complications occurred during or after the biopsy. Sono-guided percutaneous renal biopsy using automated biopsy gun is also useful todiagnose renal parenchymal diseases without significant complications in pediatric patients

Efeito de uma sessão de treinamento de força sobre a qualidade do sono de adolescentes

OpenAIRE

Santiago, Ladyodeyse da Cunha Silva; Lyra, Maria Julia; Cunha Filho, Moacyr; Cruz, Pedro Weldes da Silva; Santos, Marcos André Moura dos; Falcão, Ana Patrícia Siqueira Tavares

2015-01-01

INTRODUÇÃO: o sono é uma função biológica fundamental para a conservação da energia e a restauração do metabolismo energético.OBJETIVO: analisar o efeito de uma sessão do treinamento de força realizada em diferentes horários sobre a qualidade do sono de adolescentes e examinar se a relação entre a melhoria da qualidade do sono e o horário da sessão de treino se altera após o ajuste para idade.MÉTODOS: participaram do estudo seis estudantes do sexo masculino moradores internos do IFPE - Campus...

The relationship between shift work and sleep patterns in nurses Relação entre trabalho por turnos e padrões de sono em enfermeiros

Directory of Open Access Journals (Sweden)

Manuel Fernando dos Santos Barbosa

2013-03-01

Full Text Available The scope of this study was to evaluate the sleep/wake cycle in shift work nurses, as well as their sleep quality and chronotype. The sleep/wake cycle was evaluated by keeping a sleep diary for a total of 60 nurses with a mean age of 31.76 years. The Horne & Östberg Questionnaire (1976 for the chronotype and the Pittsburgh Sleep Quality Index (PSQI for sleep quality were applied. The results revealed a predominance of indifferent chronotypes (65.0%, followed by moderately evening persons (18.3%, decidedly evening persons (8.3%, moderately morning persons (6.6% and decidedly morning persons (1.8%. The sleep quality perception was analyzed by the visual analogical scale, showing a mean score of 5.85 points for nighttime sleep and 4.70 points for daytime sleep, which represented a statistically significant difference. The sleep/wake schedule was also statistically different when considering weekdays and weekends. The PSQI showed a mean of 7.0 points, characterizing poor sleep quality. The results showed poor sleep quality in shift work nurses, possibly due to the lack of sport and shift work habits.Este estudo teve como objectivo analisar o ciclo vigília-sono em enfermeiros que trabalham por turnos, bem como a qualidade do sono e cronótipo. O ciclo vigília-sono foi avaliado através do diário de sono, num total de 60 enfermeiros, com idade média de 31.76 anos. Para o cronótipo utilizou-se o Questionário de Horne e Östberg, de 1976, e para medir a qualidade de sono calculou-se o Índice Qualidade de Sono de Pittsburg (PSQI. Os resultados do cronótipo mostraram uma predominância para tipo indiferente (65.0%, seguido do tipo Moderamente Vespertinos (18.3%, Definitivamente Vespertino (8.3%, Moderadamente Matutinos (6.6% e Definitivamente Matutinos (1.8%. A percepção da qualidade do sono autorreportada pela Escala Analógica Visual (VAS foi de 5.85 pontos, em média, para o sono nocturno e 4.70 para o sono diurno, diferen

Melhora da dor, do cansaço e da qualidade subjetiva do sono por meio de orientações de higiene do sono em pacientes com fibromialgia Improvement in pain, fatigue, and subjective sleep quality through sleep hygiene tips in patients with fibromyalgia

Directory of Open Access Journals (Sweden)

Aline Cristina Orlandi

2012-10-01

Full Text Available OBJETIVO: Avaliar a efetividade das orientações para higiene do sono em mulheres portadoras de fibromialgia. MATERIAIS E MÉTODOS: Setenta mulheres completaram o estudo. Na avaliação foram aplicados o Questionário de Impacto da Fibromialgia(FIQ, o Índice de Qualidade do Sono de Pittsburgh (PSQI e um questionário geral, com dados pessoais e informações de hábitos de vida. Todas as pacientes receberam informações quanto à doença, além de um diário do sono, e apenas o grupo-experimental recebeu orientações para higiene do sono. Foi solicitado às pacientes que realizassem a higiene do sono, e as mesmas foram reavaliadas após três meses. RESULTADOS: A idade média das pacientes do grupo-controle foi 55,2 ± 7,12 anos, e a do grupo-experimental foi 53,5 ± 8,89 anos (P = 0,392. Nessas pacientes foram observadas diminuições da medida de Escala Visual Analógica de dor (P = 0,028, de cansaço (P = 0,021 e do componente 1 do PSQI (P = 0,030. O grupo que recebeu orientações para higiene do sono mostrou redução significativa na dificuldade de retorno ao sono quando acordava de madrugada (P = 0,031. O grupo-experimental apresentou aumento na porcentagem de relatos de "ambiente sem ruído" (variando de 42,9% para 68,6%, diminuição da porcentagem de relatos de "ambiente com pouco ruído" (variando de 40% para 22,9% e diminuição na porcentagem de relatos de "ambiente com muito ruído" (variando de 17,1% para 8,6%. As alterações facilitaram o retorno ao sono quando as pacientes acordavam durante a madrugada. CONCLUSÃO: Uma cartilha com orientações de higiene do sono permitiu a alteração do comportamento das pacientes, que obtiveram melhora da dor e do cansaço, aumento da qualidade subjetiva do sono, além de facilitação do retorno ao sono após despertar durante a madrugada.OBJECTIVE: To evaluate the effectiveness of sleep hygiene instructions for women with fibromyalgia. MATERIALS AND METHODS: Seventy women with

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

2012-01-01

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

Overview of emerging nonvolatile memory technologies.

Science.gov (United States)

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Overview of emerging nonvolatile memory technologies

Science.gov (United States)

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

Energy Technology Data Exchange (ETDEWEB)

Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung, E-mail: mskang@ssu.ac.kr [Department of Chemical Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)

2015-02-09

Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

International Nuclear Information System (INIS)

Karimov, Khasan S.; Muqeet Rehman, M.; Zameer Abbas, S.; Ahmad, Zubair; Touati, Farid; Mahroof-Tahir, M.

2015-01-01

A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H 2 Pc are fabricated by vacuum deposition of the CuPc and H 2 Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage (I–V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases ∼ 80–100 times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior. (paper)

Appearance of high submerged cavitating jet: The cavitation phenomenon and sono luminescence

Directory of Open Access Journals (Sweden)

Hutli Ezddin

2013-01-01

Full Text Available In order to study jet structure and behaviour of cloud cavitation within time and space, visualization of highly submerged cavitating water jet has been done using Stanford Optics 4 Quick 05 equipment, through endoscopes and other lenses with Drello3244 and Strobex Flash Chadwick as flashlight stroboscope. This included obligatory synchronization with several types of techniques and lenses. Images of the flow regime have been taken, allowing calculation of the non-dimensional cavitation cloud length under working conditions. Consequently a certain correlation has been proposed. The influencing parameters, such as; injection pressure, downstream pressure and cavitation number were experimentally proved to be very significant. The recordings of sono-luminescence phenomenon proved the collapsing of bubbles everywhere along the jet trajectory. In addition, the effect of temperature on sono-luminescence recordings was also a point of investigation. [Projekat Ministarstva nauke Republike Srbije, br. TR35046

Sono-chemiluminescence from a single cavitation bubble in water

International Nuclear Information System (INIS)

Brotchie, Adam; Shchukin, Dmitry; Moehwald, Helmuth; Schneider, Julia; Pflieger, Rachel

2012-01-01

In summary, this study has revealed the conditions required for a single bubble to be sono-chemically active. Evidence of radical-induced processes surrounding the bubble was only observed below the SL threshold, where the bubble was not spatially stable, and did not correlate with emission from excited molecular states inside the bubble. Moreover, this work substantiates recent progress that has been made in bridging the gap between single and multi-bubble cavitation. (authors)

Active non-volatile memory post-processing

Energy Technology Data Exchange (ETDEWEB)

Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

2017-04-11

A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

Avaliação de um modelo de predição para apneia do sono em pacientes submetidos a polissonografia

OpenAIRE

Musman,Silvio; Passos,Valéria Maria de Azeredo; Silva,Izabella Barreto Romualdo; Barreto,Sandhi Maria

2011-01-01

OBJETIVO: Testar um modelo de predição para apneia do sono a partir de variáveis sociodemográficas e clínicas em uma população com suspeita de distúrbio do sono e submetida à polissonografia. MÉTODOS: Foram incluídos no estudo 323 pacientes consecutivos submetidos à polissonografia por suspeita clínica de distúrbio do sono. Utilizou-se um questionário com questões sociodemográficas e a escala de sonolência de Epworth. Foram medidos pressão arterial, peso, altura e SpO2. A regressão linear múl...

Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Meng Chuan Lee

2013-01-01

Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

Enhanced non-volatile and updatable holography using a polymer composite system.

Science.gov (United States)

Wu, Pengfei; Sun, Sam Q; Baig, Sarfaraz; Wang, Michael R

2012-03-12

Updatable holography is considered as the ultimate technique for true 3D information recording and display. However, there is no practical solution to preserve the required features of both non-volatility and reversibility which conflict with each other when the reading has the same wavelength as the recording. We demonstrate a non-volatile and updatable holographic approach by exploiting new features of molecular transformations in a polymer recording system. In addition, by using a new composite recording film containing photo-reconfigurable liquid-crystal (LC) polymer, the holographic recording is enhanced due to the collective reorientation of LC molecules around the reconfigured polymer chains.

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

Science.gov (United States)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

Radiation-hardened nonvolatile MNOS RAM

International Nuclear Information System (INIS)

Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

1983-01-01

A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s

Sono-electroanalysis of copper: enhanced detection and determination in the presence of surfactants.

Science.gov (United States)

Hardcastle, Joanna Lorraine; Hignett, Geraldine; Melville, James L; Compton, Richard G

2002-04-01

Surfactant adsorption has been shown to have a passivating effect on the electrode surface during anodic stripping voltammetric measurements. In the present work the feasibility of sono-anodic stripping analysis for the determination of copper in aqueous media contaminated with surfactant has been studied at an unmodified bare glassy carbon electrode. We illustrate the deleterious effect of three common surfactants, sodium dodecyl sulfate (SDS), dodecyl pyridinium chloride (DPC) and Triton-X 100 (TX-100) on conventional electroanalysis. The analogous sono-electroanalytical response was investigated for each surfactant at ultrasound intensities above and below the cavitation threshold. The enhancement in the stripping signal observed is attributed to the increased mass transport due to acoustic streaming and above the cavitation threshold the intensity of cavitational events is significantly increased leading to shearing of adsorbed surfactant molecules from the surface. As a result accurate analyses for SDS concentrations up to 100 ppm are possible, with analytical signals visible in solutions of SDS and TX-100 of 1000 ppm. Analysis is reported in high concentration of surfactant with use of sono-solvent double extraction. The power of this technique is clearly illustrated by the ability to obtain accurate measurements of copper concentration from starting solutions containing 1000 ppm SDS or TX-100. This was also exemplified by analysis of the low concentration 0.3 microM Cu(II) solution giving a percentage recovery of 94% in the presence of 1000 ppm SDS or TX-100.

Treating soil-washing fluids polluted with oxyfluorfen by sono-electrolysis with diamond anodes.

Science.gov (United States)

Vieira Dos Santos, E; Sáez, C; Cañizares, P; Martínez-Huitle, C A; Rodrigo, M A

2017-01-01

This works is focused on the treatment by sono-electrolysis of the liquid effluents produced during the Surfactant-Aided Soil-Washing (SASW) of soils spiked with herbicide oxyfluorfen. Results show that this combined technology is very efficient and attains the complete mineralization of the waste, regardless of the surfactant/soil radio applied in the SASW process (which is the main parameter of the soil remediation process and leads to very different wastes). Both the surfactant and the herbicide are completely degraded, even when single electrolysis is used; and only two intermediates are detected by HPLC in very low concentrations. Conversely, the efficiency of single sonolysis approach, for the oxidation of pollutant, is very low and just small changes in the herbicides and surfactant concentrations are observed during the tests carried out. Sono-electrolysis with diamond electrodes achieved higher degradation rates than those obtained by single sonolysis and/or single electrolysis with diamond anodes. A key role of sulfate is developed, when it is released after the electrochemical degradation of surfactant. The efficient catalytic effect observed which can be explained by the anodic formation of persulfate and the later, a sono-activation is attained to produce highly efficient sulfate radicals. The effect of irradiating US is more importantly observed in the pesticide than in the surfactant, in agreement with the well-known behavior of these radicals which are known to oxidize more efficiently aromatic compounds than aliphatic species. Copyright © 2016 Elsevier B.V. All rights reserved.

Sono-vigília, aspectos de memória e melatonina em Síndrome de Williams-Beuren: uma revisão de literatura

Directory of Open Access Journals (Sweden)

Stella Donadon Santoro

2014-12-01

Full Text Available A Síndrome de Williams-Beuren, distúrbio genético (microdeleção na região cromossômica 7q11.23, apresenta como fenótipo aparente habilidade social que contrasta com o mau funcionamento cognitivo global e visuo-espacial, problemas na forma receptiva, estrutural e semântica da comunicação, além de déficits na atenção, hiperatividade e na memória visuoespacial. Outra caracteristica são desordens no ciclo sono-vigília, com sono ineficaz, resistência em ir para a cama, acordares durante a noite e sonolência durante o dia. Uma possibilidade ainda não explorada nesta síndrome seria o padrão anormal na síntese de melatonina, hormônio capaz de modular a qualidade do sono. Considerando que a qualidade do sono é diretamente influenciada pelos níveis de melatonina e que tanto a melatonina quanto o sono são essenciais para o desenvolvimento adequado das funções cognitivas, buscou-se nesta revisão de literatura quais estudos investigaram separadamente e ou correlacionaram estes três aspectos (melatonina, sono-vigília e memória na síndrome de Williams-Beuren. Para busca, foram utilizadas as bases de dados Medline/Pubmed, SciELO e Lilacs, com os seguintes descritores: "Williams Beuren syndrome, síndrome de Williams Beuren, memory, memória, sleep-wake, sono-vigília, melatonin e melatonina", por meio de cruzamento e com o conectivo AND. O levantamento bibliográfico mostrou que não existem na literatura trabalhos que correlacionaram estas três variáveis entre si nem tampouco trabalhos que investigaram a melatonina na síndrome de Williams-Beuren. As investigações sobre sono assim como as investigações sobre memória são criticamente discutidas neste trabalho que ressalta a necessidade de estudos que correlacionem estes parâmetros, bem como outros fatores comportamentais, cognitivos e bioquímicos a eles relacionados.

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

Science.gov (United States)

Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

2018-09-01

In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

International Nuclear Information System (INIS)

Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

2015-01-01

Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

TEMPO DE TELA, PERCEPÇÃO DA QUALIDADE DE SONO E EPISÓDIOS DE PARASSONIA EM ADOLESCENTES

OpenAIRE

Silva, Alison Oliveira da; Oliveira, Luciano Machado Ferreira Tenório de; Santos, Marcos André Moura dos; Tassitano, Rafael Miranda

2017-01-01

RESUMO Introdução: O sono é um importante componente no processo de desenvolvimento biológico e mental das crianças e dos adolescentes, considerado fonte de revitalização das funções orgânicas. Objetivo: Analisar a associação entre o tipo e tempo de exposição à tela, a percepção da qualidade de sono e os episódios de parassonia em adolescentes. Métodos: Estudo transversal que incorpora um levantamento epidemiológico de base escolar com amostra representativa (n = 481) de estudantes (14 a 1...

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan

2016-03-16

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

Channel equalization techniques for non-volatile memristor memories

KAUST Repository

Naous, Rawan; Zidan, Mohammed A.; Salem, Ahmed Sultan; Salama, Khaled N.

2016-01-01

Channel coding and information theoretic approaches have been utilized in conventional non-volatile memories to overcome their inherent design limitations of leakage, coupling and refresh rates. However, the continuous scaling and integration constraints set on the current devices directed the attention towards emerging memory technologies as suitable alternatives. Memristive devices are prominent candidates to replace the conventional electronics due to its non-volatility and small feature size. Nonetheless, memristor-based memories still encounter an accuracy limitation throughout the read operation addressed as the sneak path phenomenon. The readout data is corrupted with added distortion that increases significantly the bit error rate and jeopardizes the reliability of the read operation. A novel technique is applied to alleviate this distorting effect where the communication channel model is proposed for the memory array. Noise cancellation principles are applied with the aid of preset pilots to extract channel information and adjust the readout values accordingly. The proposed technique has the virtue of high speed, energy efficiency, and low complexity design while achieving high reliability and error-free decoding.

Radiation-hardened MRAM-based LUT for non-volatile FPGA soft error mitigation with multi-node upset tolerance

Science.gov (United States)

Zand, Ramtin; DeMara, Ronald F.

2017-12-01

In this paper, we have developed a radiation-hardened non-volatile lookup table (LUT) circuit utilizing spin Hall effect (SHE)-magnetic random access memory (MRAM) devices. The design is motivated by modeling the effect of radiation particles striking hybrid complementary metal oxide semiconductor/spin based circuits, and the resistive behavior of SHE-MRAM devices via established and precise physics equations. The models developed are leveraged in the SPICE circuit simulator to verify the functionality of the proposed design. The proposed hardening technique is based on using feedback transistors, as well as increasing the radiation capacity of the sensitive nodes. Simulation results show that our proposed LUT circuit can achieve multiple node upset (MNU) tolerance with more than 38% and 60% power-delay product improvement as well as 26% and 50% reduction in device count compared to the previous energy-efficient radiation-hardened LUT designs. Finally, we have performed a process variation analysis showing that the MNU immunity of our proposed circuit is realized at the cost of increased susceptibility to transistor and MRAM variations compared to an unprotected LUT design.

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China

Directory of Open Access Journals (Sweden)

H. H. Y. Cheung

2016-07-01

Full Text Available Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA and an organic carbon/elemental carbon (OC ∕ EC analyzer. Low volatility (LV particles, with a volatility shrink factor (VSF at 300 °C exceeding 0.9, contributed 5 % of number concentrations of the 40 nm particles and 11–15 % of the 80–300 nm particles. They were composed of non-volatile material externally mixed with volatile material, and therefore did not evaporate significantly at 300 °C. Non-volatile material mixed internally with the volatile material was referred to as medium volatility (MV, 0.4  <  VSF  <  0.9 and high volatility (HV, VSF  <  0.4 particles. The MV and HV particles contributed 57–71 % of number concentration for the particles between 40 and 300 nm in size. The average EC and OC concentrations measured by the OC ∕ EC analyzer were 3.4 ± 3.0 and 9.0 ± 6.0 µg m−3, respectively. Non-volatile OC evaporating at 475 °C or above, together with EC, contributed 67 % of the total carbon mass. In spite of the daily maximum and minimum, the diurnal variations in the volume fractions of the volatile material, HV, MV and LV residuals were less than 15 % for the 80–300 nm particles. Back trajectory analysis also suggests that over 90 % of the air masses influencing the sampling site were well aged as they were transported at low altitudes (below 1500 m for over 40 h before arrival. Further comparison with the diurnal variations in the mass fractions of EC and the non-volatile OC in PM2.5 suggests that the non-volatile residuals may be related to both EC and non-volatile OC in the afternoon, during which the concentration of aged organics increased. A closure analysis of the total mass of LV and MV residuals and the mass of EC or the

Design exploration of emerging nano-scale non-volatile memory

CERN Document Server

Yu, Hao

2014-01-01

This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design, and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices.  Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.   • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design, and hybrid NVM memory system optimization; • Provides both theoretical analysis and pr...

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

International Nuclear Information System (INIS)

Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

2016-01-01

The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

ZnO as dielectric for optically transparent non-volatile memory

International Nuclear Information System (INIS)

Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

2009-01-01

This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

High-performance non-volatile organic ferroelectric memory on banknotes

KAUST Repository

Khan, Yasser

2012-03-21

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-performance non-volatile organic ferroelectric memory on banknotes.

Science.gov (United States)

Khan, M A; Bhansali, Unnat S; Alshareef, H N

2012-04-24

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Síndrome da Apneia/Hipopneia Obstrutiva do Sono (SAHOS) e seu tratamento com cirurgia ortognática

OpenAIRE

Faria, Cindy

2013-01-01

Projeto de Pós-Graduação/Dissertação apresentado à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Medicina Dentária A Síndrome da Apneia/Hipopneia Obstrutiva do Sono (SAHOS) é uma síndrome com grande prevalência na sociedade actual, constituíndo um grande problema de saúde pública. A SAHOS ocorre pelo repetido estreitamento ou colapso das vias aéreas superiores (VAS) durante o sono provocando como principal síntoma uma hipersonolência diurna exess...

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

KAUST Repository

Wu, S.

2013-12-12

Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Qualidade de sono, atividade física durante o tempo de lazer e esforço físico no trabalho entre trabalhadores noturnos de uma indústria cerâmica

Directory of Open Access Journals (Sweden)

Elaine Cristina Marqueze

Full Text Available Este estudo teve o objetivo de verificar a relação entre qualidade do sono e atividade física durante o tempo de lazer entre trabalhadores noturnos com um elevado esforço físico no trabalho (média de 14.245; DP 3.456 kcal/semana. Também foi avaliada a relação entre a qualidade do sono e o nível do esforço físico no trabalho. Um total de 19 trabalhadores noturnos de uma indústria cerâmica respondeu o índice da qualidade do sono de Pittsburgh (PSQI e o questionário internacional da atividade física (IPAQ. Foi calculado o dispêndio calórico total por semana para cada trabalhador através do equivalente metabólico (METs. Os trabalhadores foram distribuídos em dois grupos, de acordo com os escores do PSQI. Foi realizada a análise descritiva dos dados por meio de médias, valores mínimo e máximo, proporções e desvios-padrão. A relação entre qualidade do sono e atividade física foi avaliada pelo teste Mann-Whitney. O grupo de qualidade do sono ruim mostrou nível mais elevado de gasto energético no trabalho que o outro grupo, o que sugere uma relação entre gasto energético no trabalho e qualidade de sono. Distúrbios do sono e sonolência diurna também contribuíram para a qualidade de sono ruim. Esses resultados, embora preliminares, revelam uma tendência de que o elevado esforço físico no trabalho noturno contribui para baixa qualidade de sono.

Evaluation of reinitialization-free nonvolatile computer systems for energy-harvesting Internet of things applications

Science.gov (United States)

Onizawa, Naoya; Tamakoshi, Akira; Hanyu, Takahiro

2017-08-01

In this paper, reinitialization-free nonvolatile computer systems are designed and evaluated for energy-harvesting Internet of things (IoT) applications. In energy-harvesting applications, as power supplies generated from renewable power sources cause frequent power failures, data processed need to be backed up when power failures occur. Unless data are safely backed up before power supplies diminish, reinitialization processes are required when power supplies are recovered, which results in low energy efficiencies and slow operations. Using nonvolatile devices in processors and memories can realize a faster backup than a conventional volatile computer system, leading to a higher energy efficiency. To evaluate the energy efficiency upon frequent power failures, typical computer systems including processors and memories are designed using 90 nm CMOS or CMOS/magnetic tunnel junction (MTJ) technologies. Nonvolatile ARM Cortex-M0 processors with 4 kB MRAMs are evaluated using a typical computing benchmark program, Dhrystone, which shows a few order-of-magnitude reductions in energy in comparison with a volatile processor with SRAM.

Sonolência excessiva diurna, apnéia do sono tipo central e distrofia miotônica

Directory of Open Access Journals (Sweden)

Rubens Reimão

1985-12-01

Full Text Available São relatados dois casos de distrofia miotônica acompanhada de sonolência excessiva diurna. A avaliação polissonográfica de noite inteira revelou grande número de apnéias do sono tipo central deflagrando despertares freqüentes. As apnéias dos tipos obstrutivo e misto ocorreram em níveis normais e não se constatou hipoxia. Houve diminuição da eficiência do sono e redução dos estágios 3, 4 e REM. A apnéia central e a sonolência diurna que acarreta representariam manifestações precoces do comprometimento do sistema nervoso central na distrofia miotônica.

Sleep apnea and REM sleep behavior disorder in patients with Chiari malformations Apnéia do sono e distúrbio do comportamento da fase do sono com REM em pacientes com malformações de Chiari

Directory of Open Access Journals (Sweden)

Paulo Sérgio A. Henriques-Filho

2008-06-01

Full Text Available BACKGROUND: Chiari malformations (CM may result in the appearance of REM sleep behavior disorder (RBD and sleep apnea syndrome (SAS that can be considered markers of brain stem dysfunction. PURPOSE: To evaluate the frequency of RBD and SAS in patients with CM type I and II. METHOD: Were evaluated 103 patients with CM by means of full night polysomnography. Were scoring different sleep stages, frequency of abnormal movements (through video monitoring and abnormal respiratory events. RESULTS: Of the 103 patients, 36 showed CM type I and 67 CM type II. Episodes of RBD were observed in 23 patients. Abnormal apnea-hypopnea index (AHI was observed in 65 patients. CONCLUSION: The high rate of RBD suggests that this parassomnia and the increased frequency of central sleep apnea episodes, may be considered as a marker of progressive brain stem dysfunction.INTRODUÇÃO: Malformações de Chiari (MC podem gerar o aparecimento de distúrbio comportamental da fase do sono com REM (DCR e síndrome da apnéia do sono (SAS, sugerindo a ocorrência de disfunção do tronco cerebral. OBJETIVO: Avaliar a freqüência de DCR e SAS em pacientes com MC I ou II. MÉTODO: Utilizou-se a polissonografia de noite inteira para a avaliação de 103 pacientes. Classificaram-se as diferentes fases do sono e analisou-se a freqüência de movimentos anormais (monitorada por vídeo e de eventos respiratórios anormais. RESULTADOS: Dos 103 pacientes analisados, 36 eram portadores de MC I e 67 de MC II. Episódios de DCR foram observados em 23 pacientes. O índice de apnéia/hipopnéia foi considerado anormal em 65 pacientes. CONCLUSÃO: A alta freqüência de DCR e o aumento da freqüência de episódios de apnéia central do sono podem ser considerados manifestação de disfunção progressiva do tronco cerebral.

Analysis of sleep characteristics in post-polio syndrome patients Análise das características do sono em pacientes com síndrome pós-poliomielite

Directory of Open Access Journals (Sweden)

Tatiana Mesquita e Silva

2010-08-01

Full Text Available The main post-polio syndrome (PPS symptoms are new weakness, new atrophy, fatigue, pain and sleep disturbances. Polysomnography is the gold standard for sleep analysis. OBJECTIVE: To analyze sleep patterns in PPS patients. METHOD: Sixty patients (mean age 46.8±11.3 years at the Federal University of São Paulo (UNIFESP/EPM complaining of sleep disturbances were evaluated by means of polysomnography, performed at the Sleep Institute. RESULTS: Sleep efficiency was lower due to high sleep latency and arousal index. The apnea and hypopnea index (AHI and the periodic limb movements (PLM index were higher. Sleep architecture was also impaired. There were no abnormalities of oxygen saturation, carbon dioxide levels, respiratory rate or heart rate. CONCLUSION: New post-polio sleep disturbances were isolated symptoms. It appears that these symptoms were not due to post-polio features, but rather, that they were due to dysfunction of the surviving motor neurons in the brainstem. Abnormal dopamine production, which is responsible for many sleep-related breathing disorders and abnormal movements, may also have been implicated in the present findings.Dentre as manifestações clínicas da síndrome pós poliomielite (SPP destacam-se nova fraqueza, fadiga, dor, nova atrofia e transtornos do sono. A polissonografia de noite inteira permanece sendo padrão ouro para análise do sono e diagnóstico de transtornos do sono. OBJETIVO: Verificar os transtornos de sono nos pacientes com SPP. MÉTODO: 60 pacientes com SPP (media de idade 46,8±11,3 anos, da UNIFESP/EPM,que apresentavam queixas sobre sono realizaram uma noite de polissonografia no Instituto do Sono. RESULTADOS: A eficiência do sono é diminuída em decorrência do aumento da latência do sono e do índice de despertar. O índice de apnéia e hipopnéia (IAH e o índice de movimentos periódicos dos membros (iPLM estão aumentados. A arquitetura do sono é prejudicada por essas alterações. Não h

Sono-elastography for Differentiating Benign and Malignant Cervical Lymph Nodes: A Systematic Review and Meta-Analysis

Science.gov (United States)

Ghajarzadeh, Mahsa; Mohammadifar, Mehdi; Azarkhish, Kamran; Emami-Razavi, Seyed Hassan

2014-01-01

We did this systematic review to determine diagnostic accuracy of sono-elastography in evaluating cervical lymph nodes (LNs). A highly sensitive search for sono-elastography and LNs was performed in MEDLINE, Cochrane Library, ACP Journal Club, EMBASE, Health Technology assessment, and ISI web of knowledge for studies published prior to December 2012. SPSS version 18 (SPSS Inc., Chicago, IL, USA) used for descriptive analysis and meta-disk version 1.4 applied for meta-analysis. Forest plots for pooled estimates and summery of receiver operating characteristic plots for different cut-offs were produced. The literature and manual search yielded 69 articles, of which 10 were eligible to include. A total of 578 individuals with a total number of 936 cervical LNs was evaluated (502 malignant and 434 benign). The summary sensitivity of the scoring and strain ratio (SR) measurements for the differentiation of benign and malignant LNs were 0.76 (95% CI: 0.71–0.8) and 0.83 (95% CI: 0.78–0.87). The summary specificities were 0.8 (95% confidence interval [CI]: 0.75–0.84) and 0.84 (95% CI: 0.79–0.88), respectively. Area under the curve for scoring system was 0.86 (standard error [SE] = 0.03) and 0.95 (SE = 0.02) for SR measurement. Sono-elastograohy has high accuracy in differentiating benign and malignant cervical LNs. PMID:25709787

Sono-elastography for Differentiating Benign and Malignant Cervical Lymph Nodes: A Systematic Review and Meta-Analysis.

Science.gov (United States)

Ghajarzadeh, Mahsa; Mohammadifar, Mehdi; Azarkhish, Kamran; Emami-Razavi, Seyed Hassan

2014-12-01

We did this systematic review to determine diagnostic accuracy of sono-elastography in evaluating cervical lymph nodes (LNs). A highly sensitive search for sono-elastography and LNs was performed in MEDLINE, Cochrane Library, ACP Journal Club, EMBASE, Health Technology assessment, and ISI web of knowledge for studies published prior to December 2012. SPSS version 18 (SPSS Inc., Chicago, IL, USA) used for descriptive analysis and meta-disk version 1.4 applied for meta-analysis. Forest plots for pooled estimates and summery of receiver operating characteristic plots for different cut-offs were produced. The literature and manual search yielded 69 articles, of which 10 were eligible to include. A total of 578 individuals with a total number of 936 cervical LNs was evaluated (502 malignant and 434 benign). The summary sensitivity of the scoring and strain ratio (SR) measurements for the differentiation of benign and malignant LNs were 0.76 (95% CI: 0.71-0.8) and 0.83 (95% CI: 0.78-0.87). The summary specificities were 0.8 (95% confidence interval [CI]: 0.75-0.84) and 0.84 (95% CI: 0.79-0.88), respectively. Area under the curve for scoring system was 0.86 (standard error [SE] = 0.03) and 0.95 (SE = 0.02) for SR measurement. Sono-elastograohy has high accuracy in differentiating benign and malignant cervical LNs.

Thermoluminescence and photoluminescence properties of NaCl:Mn, NaCL:Cu nano-particles produced using co-precipitation and sono-chemistry methods

Energy Technology Data Exchange (ETDEWEB)

Mehrabi, M. [Faculty of Physics, University of Kashan, Kashan (Iran, Islamic Republic of); Zahedifar, M. [Faculty of Physics, University of Kashan, Kashan (Iran, Islamic Republic of); Institute of Nanosince and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Saeidi-Sogh, Z. [Institute of Nanosince and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Ramazani-Moghaddam-Arani, A., E-mail: ramazmo@kashanu.ac.ir [Institute of Nanosince and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Sadeghi, E. [Faculty of Physics, University of Kashan, Kashan (Iran, Islamic Republic of); Institute of Nanosince and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of); Harooni, S. [Institute of Nanosince and Nanotechnology, University of Kashan, Kashan (Iran, Islamic Republic of)

2017-02-21

The NaCl: Cu and NaCl: Mn nanoparticles (NPs) were produced by co-precipitation and sono-chemistry methods and their thermoluminescence (TL) and photoluminescence (PL) properties were studied. By decreasing the particles size a considerable increase in sensitivity of the samples to high dose gamma radiation was observed. The NPs produced by sono-chemistry method have smaller size, homogeneous structure, more sensitivity to high gamma radiation and less fading than of those produced by co-precipitation method.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Metal-organic molecular device for non-volatile memory storage

International Nuclear Information System (INIS)

Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

2014-01-01

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

Science.gov (United States)

Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

2015-12-02

Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

Supercritical fluid extraction of volatile and non-volatile compounds from Schinus molle L.

Directory of Open Access Journals (Sweden)

M. S. T. Barroso

2011-06-01

Full Text Available Schinus molle L., also known as pepper tree, has been reported to have antimicrobial, antifungal, anti-inflammatory, antispasmodic, antipyretic, antitumoural and cicatrizing properties. This work studies supercritical fluid extraction (SFE to obtain volatile and non-volatile compounds from the aerial parts of Schinus molle L. and the influence of the process on the composition of the extracts. Experiments were performed in a pilot-scale extractor with a capacity of 1 L at pressures of 9, 10, 12, 15 and 20 MPa at 323.15 K. The volatile compounds were obtained by CO2 supercritical extraction with moderate pressure (9 MPa, whereas the non-volatile compounds were extracted at higher pressure (12 to 20 MPa. The analysis of the essential oil was carried out by GC-MS and the main compounds identified were sabinene, limonene, D-germacrene, bicyclogermacrene, and spathulenol. For the non-volatile extracts, the total phenolic content was determined by the Folin-Ciocalteau method. Moreover, one of the goals of this study was to compare the experimental data with the simulated yields predicted by a mathematical model based on mass transfer. The model used requires three adjustable parameters to predict the experimental extraction yield curves.

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Directory of Open Access Journals (Sweden)

Shuxiang Wu

2013-12-01

Full Text Available Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures, where the conducting layer near the LaAlO_{3}/SrTiO_{3} interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO_{3}/SrTiO_{3} interface and the creation of defect-induced gap states within the ultrathin LaAlO_{3} layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

Hipersonolência diurna e variáveis polissonográficas em doentes com síndroma de apneia do sono

Directory of Open Access Journals (Sweden)

O. Mediano

2007-11-01

Full Text Available Resumo: A síndroma de apneia obstrutiva do sono (SAOS caracteriza-se por episódios repetidos de obstrução da via aérea superior, hipoxemia nocturna e fragmentação do sono. A hipersonolência diurna constitui um sintoma frequente nos doentes com esta síndroma, embora possa estar ausente. A sua presença representa uma limitação significativa da qualidade de vida do indivíduo, bem como um aumento da morbilidade e mortalidade da SAOS, visto ser um importante factor de risco para acidentes de viação e laborais, podendo originar alterações cognitivo-comportamentais relevantes.O mecanismo desencadeante de hipersonolência diurna não é claro. Alguns autores relacionaram esta com a arquitectura anormal do sono, o que, no entanto, não foi confirmado por outros investigadores. Alguns estudos salientaram a relação entre a hipersonolência diurna e os níveis de dessaturação nocturna da oxi-hemoglobina, mas este facto não foi comprovado cientificamente.O objectivo do presente trabalho foi analisar quais os mecanismos responsáveis pela sonolência diurna nos doentes com SAOS. Assim, numerosas variáveis registadas no estudo polissonográfico foram compara das em dois grupos de indivíduos com esta patologia, apresentando um deles hipersonolência diurna inequívoca e o outro a total ausência da mesma.Foram avaliados 65 indivíduos seguidos no Departamento Respiratório do Hospital Universitário do Son Dureta (Palma de Maiorca que possuíam no registo poligráfico nocturno um índice de apneia/hipopneia (IAH >20/h. A sonolência excessiva foi determinada utilizando a escala de sono de Epworth (ESE e o teste de latência múltipla. A sua presença foi considerada sempre que o score de ESE >10 e o score do teste de latência múltipla 10 min.Cerca de 25 indivíduos foram excluídos devido a discrepância entre os resultados das referidas determinações. Dos 40 doentes restantes, 23 apresentavam hipersonolência diurna e 17 n

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Energy Technology Data Exchange (ETDEWEB)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2014-10-20

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

International Nuclear Information System (INIS)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

2014-01-01

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Nonvolatile Memory Elements Based on the Intercalation of Organic Molecules Inside Carbon Nanotubes

Science.gov (United States)

Meunier, Vincent; Kalinin, Sergei V.; Sumpter, Bobby G.

2007-02-01

We propose a novel class of nonvolatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of an encapsulated molecule. The guest molecule has two stable orientational positions relative to the nanotube that correspond to conducting and nonconducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4TCNQ molecule encapsulated inside a metallic carbon nanotube. Our results suggest that this new type of nonvolatile memory element is robust, fatigue-free, and can operate at room temperature.

A qualidade do sono, o aproveitamento escolar e o stress em adolescentes que permacem em frente ao computador durante a noite

OpenAIRE

Gema Galgani de Mesquita Duarte

2007-01-01

Resumo: A qualidade do sono, o aproveitamento escolar e o stress em adolescentes que permanecem em frente ao computador durante a noite. 2007. 234p. Professor Doutor Rubens Nelson Amaral de Assis Reimão. Dissertação (Mestrado) - Universidade Estadual de Campinas, Faculdade de Ciências Médicas, Departamento da Saúde da Criança e do Adolescente. INTRODUÇÃO: O sono representa importante papel na vida do homem, influenciando as condições físicas, psicológicas e sociais. Está intimamente ligado ao...

Sono, fragilidade e cognição: estudo multicêntrico com idosos brasileiros

Directory of Open Access Journals (Sweden)

Ariene Angelini dos Santos

2013-06-01

Full Text Available O estudo objetivou analisar a influência conjunta das variáveis antecedentes (idade, gênero, renda, fragilidade e distúrbios de sono sobre a cognição de idosos residentes na comunidade. Trata-se de um recorte do projeto multicêntrico Fragilidade em Idosos Brasileiros (FIBRA. Foram avaliados 878 idosos, utilizando-se questionário sociodemográfico; questões sobre distúrbios de sono (Perfil de Saúde de Nottingham; questões sobre cochilo (Minnesota Leisure Activity Questionnaire e o MEEM (rastreio de alterações cognitivas. Na análise dos dados foram utilizados os testes Mann Whitney e Kruskal Wallis e a análise de regressão univariada e multivariada, com nível de significância de 5% (p<0,05. Os resultados mostraram que os idosos com menor escore do MEEM foram os com menor renda familiar, do sexo feminino e com maior idade. Os profissionais de saúde poderão desenvolver ações preventivas em relação à cognição, mantendo assim a autonomia e independência nas atividades cotidianas desses idosos.

Potential of Mass Spectrometry in Developing Clinical Laboratory Biomarkers of Nonvolatiles in Exhaled Breath.

Science.gov (United States)

Beck, Olof; Olin, Anna-Carin; Mirgorodskaya, Ekaterina

2016-01-01

Exhaled breath contains nonvolatile substances that are part of aerosol particles of submicrometer size. These particles are formed and exhaled as a result of normal breathing and contain material from distal airways of the respiratory system. Exhaled breath can be used to monitor biomarkers of both endogenous and exogenous origin and constitutes an attractive specimen for medical investigations. This review summarizes the present status regarding potential biomarkers of nonvolatile compounds in exhaled breath. The field of exhaled breath condensate is briefly reviewed, together with more recent work on more selective collection procedures for exhaled particles. The relation of these particles to the surfactant in the terminal parts of the respiratory system is described. The literature on potential endogenous low molecular weight compounds as well as protein biomarkers is reviewed. The possibility to measure exposure to therapeutic and abused drugs is demonstrated. Finally, the potential future role and importance of mass spectrometry is discussed. Nonvolatile compounds exit the lung as aerosol particles that can be sampled easily and selectively. The clinical applications of potential biomarkers in exhaled breath comprise diagnosis of disease, monitoring of disease progress, monitoring of drug therapy, and toxicological investigations. © 2015 American Association for Clinical Chemistry.

Failing arsenic mitigation technology in rural Bangladesh: explaining stagnation in niche formation of the Sono filter

NARCIS (Netherlands)

Kundu, D.K.; Mol, A.P.J.; Gupta, A.

2016-01-01

Arsenic contamination of shallow hand pump tube well drinking water in Bangladesh has created opportunities for radical innovations to emerge. One such innovation is the household Sono filter, designed to remove arsenic from water supplies. Applying a strategic niche management approach, and based

Stable isotopic carbon composition of apples and their subfractions--juice, seeds, sugars, and nonvolatile acids.

Science.gov (United States)

Lee, H S; Wrolstad, R E

1988-01-01

The 13C:12C ratios of 8 authentic apple juice samples and their subfractions were determined by mass spectrometry. Apples from Argentina, Mexico, New Zealand, and the United States were processed into juice; pulp was collected from the milled fruit and seeds were collected from the press-cake. Sugars, nonvolatile acids, and phenolics were isolated from the juice by treatment with ion-exchange resins and polyvinylpyrrolidone (PVPP). The mean value for all juice samples was -24.2% which is close to the values reported by other investigators. Juice from apples grown in Argentina, Mexico, and New Zealand did not differ from U.S. samples. The isotopic composition of the subfractions ranged from -22.0 to -31.0%. The values for the pulp were essentially the same as for juice. The sugar fraction was slightly less negative than the juice; the nonvolatile acid and phenolic fractions were more negative. The levels of nonvolatile acids and phenolics in apple juice are low, however, so these compounds contribute little to overall delta 13C values in juice.

Hipersonolência diurna e variáveis polissonográficas em doentes com síndroma de apneia do sono

Directory of Open Access Journals (Sweden)

O. Mediano

2007-11-01

Full Text Available Resumo: A síndroma de apneia obstrutiva do sono (SAOS caracteriza-se por episódios repetidos de obstrução da via aérea superior, hipoxemia nocturna e fragmentação do sono. A hipersonolência diurna constitui um sintoma frequente nos doentes com esta síndroma, embora possa estar ausente. A sua presença representa uma limitação significativa da qualidade de vida do indivíduo, bem como um aumento da morbilidade e mortalidade da SAOS, visto ser um importante factor de risco para acidentes de viação e laborais, podendo originar alterações cognitivo-comportamentais relevantes.O mecanismo desencadeante de hipersonolência diurna não é claro. Alguns autores relacionaram esta com a arquitectura anormal do sono, o que, no entanto, não foi confirmado por outros investigadores. Alguns estudos salientaram a relação entre a hipersonolência diurna e os níveis de dessaturação nocturna da oxi-hemoglobina, mas este facto não foi comprovado cientificamente.O objectivo do presente trabalho foi analisar quais os mecanismos responsáveis pela sonolência diurna nos doentes com SAOS. Assim, numerosas variáveis registadas no estudo polissonográfico foram comparadas em dois grupos de indivíduos com esta patologia, apresentando um deles hipersonolência diurna inequívoca e o outro a total ausência da mesma.Foram avaliados 65 indivíduos seguidos no Departamento Respiratório do Hospital Universitário do Son Dureta (Palma de Maiorca que possuíam no registo poligráfico nocturno um índice de apneia/hipopneia (IAH >20/h. A sonolência excessiva foi determinada utilizando a escala de sono de Epworth (ESE e o teste de latência múltipla. A sua presença foi considerada sempre que o score de ESE >10 e o score do teste de latência múltipla 10 min.Cerca de 25 indivíduos foram excluídos devido a discrepância entre os resultados das referidas determinações. Dos 40 doentes restantes, 23 apresentavam hipersonolência diurna e 17 n

Size distributions of non-volatile particle residuals (Dp<800 nm at a rural site in Germany and relation to air mass origin

Directory of Open Access Journals (Sweden)

T. Tuch

2007-11-01

Full Text Available Atmospheric aerosol particle size distributions at a continental background site in Eastern Germany were examined for a one-year period. Particles were classified using a twin differential mobility particle sizer in a size range between 3 and 800 nm. As a novelty, every second measurement of this experiment involved the removal of volatile chemical compounds in a thermodenuder at 300°C. This concept allowed to quantify the number size distribution of non-volatile particle cores – primarily associated with elemental carbon, and to compare this to the original non-conditioned size distribution. As a byproduct of the volatility analysis, new particles originating from nucleation inside the thermodenuder can be observed, however, overwhelmingly at diameters below 6 nm. Within the measurement uncertainty, every particle down to particle sizes of 15 nm is concluded to contain a non-volatile core. The volume fraction of non-volatile particulate matter (non-conditioned diameter < 800 nm varied between 10 and 30% and was largely consistent with the experimentally determined mass fraction of elemental carbon. The average size of the non-volatile particle cores was estimated as a function of original non-conditioned size using a summation method, which showed that larger particles (>200 nm contained more non-volatile compounds than smaller particles (<50 nm, thus indicating a significantly different chemical composition. Two alternative air mass classification schemes based on either, synoptic chart analysis (Berliner Wetterkarte or back trajectories showed that the volume and number fraction of non-volatile cores depended less on air mass than the total particle number concentration. In all air masses, the non-volatile size distributions showed a more and a less volatile ("soot" mode, the latter being located at about 50 nm. During unstable conditions and in maritime air masses, smaller values were observed compared to stable or continental conditions

Avaliação da relação entre qualidade de sono e uma intervenção com jogos para o desempenho de crianças e adolescentes

OpenAIRE

Araújo, Danilo de Freitas

2012-01-01

O sono é um processo cerebral ativo que contribui para a realização eficiente das tarefas cotidianas. Mudanças em seu padrão podem influenciar o desempenho de diversos processos cognitivos. Vários estudos recentes têm demonstrado a possibilidade de melhora do desempenho cognitivo, a partir do treinamento cognitivo com o uso de jogos de computador. A questão é se tais intervenções podem ser influenciadas também pela qualidade do sono. Assim, avaliamos o efeito da qualidade do sono sobre ...

Low-temperature process steps for realization of non-volatile memory devices

NARCIS (Netherlands)

Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.; Holleman, J.; Schmitz, Jurriaan

2007-01-01

In this work, the low-temperature process steps required for the realization of nano-crystal non-volatile memory cells are discussed. An amorphous silicon film, crystallized using a diode pumped solid state green laser irradiating at 532 nm, is proposed as an active layer. The deposition of the

Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions

Science.gov (United States)

2017-03-06

WP-201317) Demonstration of Novel Sampling Techniques for Measurement of Turbine Engine Volatile and Non-volatile Particulate Matter (PM... Engine Volatile and Non-Volatile Particulate Matter (PM) Emissions 6. AUTHOR(S) E. Corporan, M. DeWitt, C. Klingshirn, M.D. Cheng, R. Miake-Lye, J. Peck...the performance and viability of two devices to condition aircraft turbine engine exhaust to allow the accurate measurement of total (volatile and non

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

Science.gov (United States)

Liu, S. Q.; Wu, N. J.; Ignatiev, A.

2001-01-01

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

Science.gov (United States)

MacLeod, Todd C.; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

2011-01-01

NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

Science.gov (United States)

Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

2018-05-01

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

Activating molecules, ions, and solid particles with acoustic cavitation

International Nuclear Information System (INIS)

Pflieger, Rachel; Chave, Tony; Virot, Matthieu; Nikitenko, Sergey I.

2014-01-01

The chemical and physical effects of ultrasound arise not from a direct interaction of molecules with sound waves, but rather from the acoustic cavitation: the nucleation, growth, and implosive collapse of micro-bubbles in liquids submitted to power ultrasound. The violent implosion of bubbles leads to the formation of chemically reactive species and to the emission of light, named sono-luminescence. In this manuscript, we describe the techniques allowing study of extreme intra-bubble conditions and chemical reactivity of acoustic cavitation in solutions. The analysis of sono-luminescence spectra of water sparged with noble gases provides evidence for nonequilibrium plasma formation. The photons and the 'hot' particles generated by cavitation bubbles enable to excite the non-volatile species in solutions increasing their chemical reactivity. For example the mechanism of ultra-bright sono-luminescence of uranyl ions in acidic solutions varies with uranium concentration: sono-photoluminescence dominates in diluted solutions, and collisional excitation contributes at higher uranium concentration. Secondary sono-chemical products may arise from chemically active species that are formed inside the bubble, but then diffuse into the liquid phase and react with solution precursors to form a variety of products. For instance, the sono-chemical reduction of Pt(IV) in pure water provides an innovative synthetic route for monodispersed nanoparticles of metallic platinum without any templates or capping agents. Many studies reveal the advantages of ultrasound to activate the divided solids. In general, the mechanical effects of ultrasound strongly contribute in heterogeneous systems in addition to chemical effects. In particular, the sono-lysis of PuO 2 powder in pure water yields stable colloids of plutonium due to both effects. (authors)

Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

Science.gov (United States)

Al-Amody, Fuad H.

This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

Design considerations for a radiation hardened nonvolatile memory

International Nuclear Information System (INIS)

Murray, J.R.

1993-01-01

Sub-optimal design practices can reduce the radiation hardness of a circuit even though it is fabricated in a radiation hardened process. This is especially true for a nonvolatile memory, as compared to a standard digital circuit, where high voltages and unusual bias conditions are required. This paper will discuss the design technique's used in the development of a 64K EEPROM (Electrically Erasable Programmable Read Only Memory) to maximize radiation hardness. The circuit radiation test results will be reviewed in order to provide validation of the techniques

Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

International Nuclear Information System (INIS)

Kothapalli, A.; Sadler, G.

2003-01-01

The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 deg. C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.htmlref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.htmlpage1

Determination of non-volatile radiolytic compounds in ethylene co-vinyl alcohol

Science.gov (United States)

Kothapalli, A.; Sadler, G.

2003-08-01

The use of ionizing radiation on food contact polymers is increasing due to the critical role of the package in holding or containing the irradiated foods [Food Add. Contam. 18(6) (2001) 475]. Irradiation benefits the food if properly applied and the food is pre-packaged prior to irradiation to protect it from subsequent recontamination. The United States Food and Drug Administration (USFDA) has approved the use of ionizing radiation within the dosage range of 0-60 kGy on limited films since the 1960s [USFDA 21CFR 179.45]. The obstacle in the way of approval of additional polymers is that FDA fears that these materials may undergo changes during irradiation producing toxic radiolytic fragments. Ethylene co-vinyl alcohol (EVOH), which is often used in food applications, is not approved by the FDA for pre-packaged irradiated foods. The present work examines the non-volatile radiolytic compounds, which may be formed due to exposure to gamma irradiation at the dosage levels of 3 and 10 kGy versus a non-radiated control. Irradiated EVOH is subjected to extraction with 95:5 ethanol and water (by volume) as the food simulating solvent (FSS) for a period of 10 days at 40 °C, which models the amount of radiolytic compound a food would extract in 1 year [USFDA Chemistry Requirement for Food Contact Notification]. The FSS is then analyzed for the presence of non-volatile compounds using advanced liquid chromatographic techniques. The chromatograms obtained from different dosages show that non-volatile radiolytic compounds are not formed in EVOH and it would, therefore be in compliance with safety demands of USFDA [Available at: http://www.cfsan.fda.gov/~dms/opa-guid.html#ref and http://www.access.gpo.gov/nara/cfr/cfr-table-search.html#page1].

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2015-01-01

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-07-01

Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.

2015-07-23

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Estudo comparativo de padrões de sono em trabalhadores de enfermagem dos turnos diurno e noturno Comparative study of sleep patterns in nurses working day and night shifts

Directory of Open Access Journals (Sweden)

Milva Maria Figueiredo de Martino

2002-08-01

Full Text Available Objetivo. Comparar os padrões de sono de enfermeiros dos turnos diurno e noturno em um hospital de Campinas (SP, Brasil. Métodos. Participaram 59 enfermeiros entre 23 e 59 anos. Para os enfermeiros do dia, analisou-se o sono noturno, e, para os da noite, os sonos diurno e noturno. Os informantes preencheram um diário do sono durante 1 semana, ao acordar. Foram analisados hora de ir deitar, de dormir, e de acordar; latência do sono; horas de sono noturno e diurno; cochilos; qualidade do sono; modo de acordar; e comparação do sono registrado no diário com o sono habitual. Também foram coletadas informações pessoais e profissionais. Resultados. O grupo diurno ia dormir às 23h36min e o grupo noturno, às 23h52min (P Objective. To compare sleep patterns in nurses working day and night shifts in a hospital in Campinas (SP, Brazil. Methods. Fifty-nine nurses between 23 and 59 years of age participated in the study. For day shift workers, the pattern of nocturnal sleep was examined; for night shift workers, nocturnal and diurnal sleep patterns were examined. During 1 week, participants filled out a sleep diary right after waking up. The following items were assessed: time going to bed, falling asleep, and waking up; sleep latency; duration in hours of nocturnal and diurnal sleep; naps; quality of sleep; mode of waking up; and comparison between the sleep recorded in the diary with the usual sleep. Personal and professional information was also collected. Results. Day shift workers went to bed at 23h36min, and night workers at 23h52min (P > 0.05. The nurses working a day schedule woke up earlier (7h3min than those working a night schedule when they slept at night (8h30min (P <= 0.004, Wilcoxon. Mean sleep latency was 23min26s for day shift nurses versus 22min50s for night shift nurses; the duration of nocturnal sleep was 7h11min and 9h6min, respectively. Only day workers took naps (mean 2h3min. The average diurnal sleep of night shift nurses

Padrões de sono de estudantes ingressantes na Graduação em Enfermagem Padrones de sueño de estudiantes de enfermería en lo primero-año Sleep patterns of first-year nursing students

OpenAIRE

Renata Furlani; Maria Filomena Ceolim

2005-01-01

Trata-se de estudo exploratório e descritivo com o objetivo de identificar os padrões de sono de estudantes ingressantes na graduação. Desenvolvido na Universidade Estadual de Campinas SP, os dados foram coletados em dois momentos distintos por meio do Índice de Qualidade de Sono de Pittsburgh. Durante as férias, os estudantes apresentaram melhor qualidade/ duração de sono e adoção de horários mais condizentes com seu cronotipo. Após o início das aulas, maior número apresentou sono de má qual...

Non-volatile MOS RAM cell with capacitor-isolated nodes that are radiation accessible for rendering a non-permanent programmed information in the cell of a non-volatile one

NARCIS (Netherlands)

Widdershoven, Franciscus P.; Annema, Anne J.; Storms, Maurits M.N.; Pelgrom, Marcellinus J.M.; Pelgrom, Marcel J M

2001-01-01

A non-volatile, random access memory cell comprises first and second inverters each having an output node cross-coupled by cross-coupling means to an input node of the other inverter for forming a MOS RAM cell. The output node of each inverter is selectively connected via the conductor paths of

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Science.gov (United States)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

International Nuclear Information System (INIS)

Jia Xiaoyun; Feng Peng; Zhang Shengguang; Wu Nanjian; Zhao Baiqin; Liu Su

2013-01-01

This paper presents an ultra-low-power area-efficient non-volatile memory (NVM) in a 0.18 μm single-poly standard CMOS process for passive radio frequency identification (RFID) tags. In the memory cell, a novel low-power operation method is proposed to realize bi-directional Fowler—Nordheim tunneling during write operation. Furthermore, the cell is designed with PMOS transistors and coupling capacitors to minimize its area. In order to improve its reliability, the cell consists of double floating gates to store the data, and the 1 kbit NVM was implemented in a 0.18 μm single-poly standard CMOS process. The area of the memory cell and 1 kbit memory array is 96 μm 2 and 0.12 mm 2 , respectively. The measured results indicate that the program/erase voltage ranges from 5 to 6 V The power consumption of the read/write operation is 0.19 μW/0.69 μW at a read/write rate of (268 kb/s)/(3.0 kb/s). (semiconductor integrated circuits)

Nightly use of computer by adolescents: its effect on quality of sleep Uso noturno de computador por adolescentes: seu efeito na qualidade de sono

Directory of Open Access Journals (Sweden)

Gema Mesquita

2007-06-01

Full Text Available OBJECTIVE: To analyze the influence of nocturnal use of computer and their effect on sleep quality, in a group of adolescents. METHOD: Two middle schools were chosen for the research. The sample consisted of adolescents n=160 (55M; 105F, with ages ranging from 15 to 18 years. Questionnaire about computer use with the objective of obtaining information regarding the time and number of hours of nocturnal computer use, were applied for collection of data. They included the Pittsburgh Sleep Quality Index (PSQI, utilized to quantfy sleep quality; student report cards were used to note student's absences and grades were used. RESULTS: The Multiple Logistic Regression test indicated that nocturnal computer use impairs good sleep (p=0.0062. CONCLUSION: Irregular sleep patterns associated with nightly computer use deteriorate sleep quality.OBJETIVO: Analisar a influência do uso noturno de computador na qualidade de sono, em um grupo de adolescentes. MÉTODO: Foram escolhidas duas instituições educacionais de ensino médio. A amostra tomada foi composta de adolescentes (n=160, ( 55 M; 105 F ; a faixa etária estudada foi de 15 a 18 anos. Para a coleta de dados aplicou-se: Questionário para uso do computador, com a finalidade de coletar informações sobre o horário e a quantidade de horas do uso do computador durante as noites; Índice de Qualidade de Sono de Pittsburgh (IQSP utilizado para quantificar a qualidade do sono; e os boletins dos alunos por meio dos quais foram recolhidas as faltas e as notas dos alunos. RESULTADOS: Pela Regressão Logística Múltipla, observou-se que o uso do computador é um fator que compromete o dormir bem (p=0,0062. CONCLUSÃO: Padrões irregulares de sono associados ao uso noturno de computador estão associados à deterioração da qualidade do sono.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

Identifying Non-Volatile Data Storage Areas: Unique Notebook Identification Information as Digital Evidence

Directory of Open Access Journals (Sweden)

Nikica Budimir

2007-03-01

Full Text Available The research reported in this paper introduces new techniques to aid in the identification of recovered notebook computers so they may be returned to the rightful owner. We identify non-volatile data storage areas as a means of facilitating the safe storing of computer identification information. A forensic proof of concept tool has been designed to test the feasibility of several storage locations identified within this work to hold the data needed to uniquely identify a computer. The tool was used to perform the creation and extraction of created information in order to allow the analysis of the non-volatile storage locations as valid storage areas capable of holding and preserving the data created within them.  While the format of the information used to identify the machine itself is important, this research only discusses the insertion, storage and ability to retain such information.

A genética dos distúrbios do sono na infância e adolescência The genetics of sleep disorders in childhood and adolescence

Directory of Open Access Journals (Sweden)

Magda Lahorgue Nunes

2008-08-01

Full Text Available OBJETIVO: O objetivo deste artigo é revisar a literatura sobre a genética dos distúrbios do sono na infância e adolescência. FONTES DOS DADOS: As palavras-chave "sono" e "genética" foram usadas para pesquisar por artigos publicados nos últimos cinco anos no banco de dados MEDLINE. A seguir, seus resumos foram analisados. A pesquisa também incluiu artigos clássicos, com a primeira descrição dos genes. SÍNTESE DOS DADOS: A recorrência familiar de muitos distúrbios do sono é um achado freqüente, mas loci genéticos foram descobertos para poucos deles. Descrevemos aqui distúrbios do sono transmitidos por herança genética e também aqueles que apresentam altos índices de recorrência familiar, apesar de nenhum gene específico haver sido encontrado. CONCLUSÕES: Apesar da maioria dos distúrbios do sono ainda não terem uma base molecular identificada, técnicas modernas são cada vez mais utilizadas para determinar a contribuição dos genes ao sono e aos seus distúrbios associados. A importância clínica destas descobertas pode estar relacionada com a melhoria de métodos diagnósticos, mas também como alvo para o desenvolvimento de medicações específicas.OBJECTIVE: To review the literature regarding the genetics of sleep disorders in childhood and adolescence. SOURCES: Articles published in the past 5 years were searched on MEDLINE using the keywords sleep and genetics. Abstracts were then analyzed. Classical articles with the first description of genes were also included. SUMMARY OF THE FINDINGS: We often find familial recurrence in many sleep disorders. However, gene loci were discovered for only a few of them. We describe sleep disorders transmitted by genetic heritance and also those in that, although a gene was not found, familial recurrence is high. CONCLUSION: Although most of the sleep disorders do not have by now an identified molecular basis, modern techniques are being increasingly applied to determine the

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Feasibility of nonvolatile buffers in capillary electrophoresis-electrospray ionization-mass spectrometry of proteins

NARCIS (Netherlands)

Eriksson, Jonas H.C.; Mol, Roelof; Somsen, Govert W.; Hinrichs, Wouter L.J.; Frijlink, Henderik W.; de Jong, Gerhardus J.

2004-01-01

The combination of capillary electrophoresis (CE) and electrospray ionization-mass spectrometry (ESI-MS) via a triaxial interface was studied as a potential means for the characterization of intact proteins. To evaluate the possibility to use a nonvolatile electrolyte for CE, the effect of sodium

Consenso brasileiro de ronco e apneia do sono: aspectos de interesse aos ortodontistas Brazilian consensus of snoring and sleep apnea: aspects of interest for orthodontists

Directory of Open Access Journals (Sweden)

Cauby Maia Chaves Junior

2011-02-01

Full Text Available O objetivo deste artigo é explicitar o posicionamento das sociedades médicas que, reunidas, estabeleceram consenso sobre os parâmetros clínico-laboratoriais que envolvem os distúrbios respiratórios do sono, em especial o ronco e a síndrome da apneia obstrutiva do sono (SAOS. Os ortodontistas, que vêm ocupando gradativamente seu espaço em equipes multidisciplinares que atuam na área do sono humano, pouco conhecem sobre essa uniformização coordenada pela Associação Brasileira de Sono. Os trabalhos clínicos e as pesquisas científicas oriundos da Odontologia, e em particular da Ortodontia, também devem observar e seguir esses critérios de diagnóstico e tratamento estabelecidos pela comunidade médica brasileira.The objective of this article is to clarify the positions of the medical societies that have worked together to establish a consensus regarding the clinical and laboratory parameters involved in sleep-disordered breathing, particularly snoring and obstructive sleep apnea syndrome (OSAS. Orthodontists have gradually come to take part in multidisciplinary teams that act in the area of human sleep, but few know about the uniformity coordinated by the Brazilian Association of Sleep. Clinical and scientific studies from the field of dentistry (particularly orthodontics also must observe and follow these diagnosis and treatment criteria established by the Brazilian medical community.

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Usefulness of sono-guided needle puncture for MR arthrography of the shoulder

International Nuclear Information System (INIS)

Choi, Jae Woong; Hong, Suk Ju; Suh, San Il; Yong, Hwan Suk; Kim, Jung Hyuk; Park, Cheol Min; Suh, Won Hyuck; Kim, Myung Gyu

2000-01-01

To evaluate the usefulness of sono-guided needle puncture for MR arthrography of the shoulder to locate the path of access and to control the correct placement of the needle into the shoulder. Fifteen patients with suspicion of shoulder pathology were included in this study. Patients were laid in supine positions with the arm extended and slightly abducted, the palm of the hand facing upward. A sonographic unit with a high resolution transducer with 7.5 MHz linear array was used. Axial images in the anterior aspect of the shoulder were obtained to localize the coracoid process and the anteromedical portion of the humerus. Using an aseptic technique, a 21-guage needle was advanced into the shoulder joint under ultrasonographic guidance. When the needle made contract with the articular cartilage of the humeral head, the needle was tiled to position is point in the articular cavity. Solution of 0.1 ml gadopentetate dimeglumine in 25 ml of normal saline was prepared and 12-16 ml was injected into the joint cavity. The intra-articular position of the needle and the compete distension of the shoulder joint were again confirmed by sonography. The needle was accurately placed in 14 out of 15 patients without damage to neighboring structures. It took 10 to 15 minutes to complete the procedure in 14 patients. No side effects attributable to gadopentetate dimeglumine were found. Sono-guided needle puncture for the shoulder MR arthrography can be a substitutable method for fluoroscopic guidance, with easy access, advantages of lacking radiation hazard and eliminating the need for iodized contrast agents.

Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

Science.gov (United States)

Zhang, Qihang; Zhang, Yifei; Li, Junying; Soref, Richard; Gu, Tian; Hu, Juejun

2018-01-01

In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge 2 Sb 2 Se 4 Te 1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Energy Technology Data Exchange (ETDEWEB)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2013-12-21

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

International Nuclear Information System (INIS)

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

2013-01-01

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices

Memory characteristics of Au nanocrystals embedded in metal-oxide-semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

International Nuclear Information System (INIS)

Wang, C.-C.; Chiou, Y.-K.; Chang, C.-H.; Tseng, J.-Y.; Wu, L.-J.; Chen, C.-Y.; Wu, T.-B.

2007-01-01

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al 2 O 3 /SiO 2 matrix were studied. In this work, we have demonstrated that the use of Al 2 O 3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors

Desenvolvimento dos estados de sono na infância Desarrollo de los estados de sueño en la infancia Development of sleep stages in childhood

Directory of Open Access Journals (Sweden)

Lorena Teresinha Consalter Geib

2007-06-01

Full Text Available Na perspectiva de descrever alguns aspectos da ontogênese e da organização dos estados de sono no primeiro ano de vida, revisou-se na literatura as alterações fisiológicas e comportamentais controladas pelas mudanças que ocorrem durante o sono nessa etapa desenvolvimental. Além disso, com fundamentação na teoria precursora do sono, expõe-se as etapas da diferenciação, a classificação e a organização temporal dos estados de sono, com vistas ao manejo favorável dos eventos ambientais, que afetam a organização do sono infantil.Con la perspectiva de describir algunos aspectos de la ontogénesis y de la organización de los estados del sueño en el primer año de la vida, fueron revisadas, en la literatura, las alteraciones fisiológicas y comportamentales controladas por los cambios que ocurren durante el sueño en esta etapa del desenvolvimiento. Además de esto, fundamentándose en la teoría precursora del sueño, se exponen las etapas de la diferencia, de la clasificación y de la organización temporal de los estados del sueño, con vistas al manejo favorable de los eventos ambientales, que afectan la organización del sueño infantil.With the perspective of describing some aspects of the ontogenesis and organization of the sleep stages during the first year of life, a literature review was carried out to assess the physiological and behavioral alterations controlled by changes occurring during sleep at this developmental stage. In addition, based on the sleep preceding theory, the stages of differentiation, classification and time organization of sleep stages are presented, aiming at the favorable management of environmental events that affect the organization of infant sleep.

Pluto's Nonvolatile Chemical Compounds

Science.gov (United States)

Grundy, William M.; Binzel, Richard; Cook, Jason C.; Cruikshank, Dale P.; Dalle Ore, Cristina M.; Earle, Alissa M.; Ennico, Kimberly; Jennings, Donald; Howett, Carly; Kaiser, Ralf-Ingo; Linscott, Ivan; Lunsford, A. W.; Olkin, Catherine B.; Parker, Alex Harrison; Parker, Joel Wm.; Philippe, Sylvain; Protopapa, Silvia; Quirico, Eric; Reuter, D. C.; Schmitt, Bernard; Singer, Kelsi N.; Spencer, John R.; Stansberry, John A.; Stern, S. Alan; Tsang, Constantine; Verbiscer, Anne J.; Weaver, Harold A.; Weigle, G. E.; Young, Leslie

2016-10-01

Despite the migration of Pluto's volatile ices (N2, CO, and CH4) around the surface on seasonal timescales, the planet's non-volatile materials are not completely hidden from view. They occur in a variety of provinces formed over a wide range of timescales, including rugged mountains and chasms, the floors of mid-latitude craters, and an equatorial belt of especially dark and reddish material typified by the informally named Cthulhu Regio. NASA's New Horizons probe observed several of these regions at spatial resolutions as fine as 3 km/pixel with its LEISA imaging spectrometer, covering wavelengths from 1.25 to 2.5 microns. Various compounds that are much lighter than the tholin-like macromolecules responsible for the reddish coloration, but that are not volatile at Pluto surface temperatures such as methanol (CH3OH) and ethane (C2H6) have characteristic absorption bands within LEISA's wavelength range. This presentation will describe their geographic distributions and attempt to constrain their origins. Possibilities include an inheritance from Pluto's primordial composition (the likely source of H2O ice seen on Pluto's surface) or ongoing production from volatile precursors through photochemistry in Pluto's atmosphere or through radiolysis on Pluto's surface. New laboratory data inform the analysis.This work was supported by NASA's New Horizons project.

Qualidade de sono e função pulmonar em adolescentes portadores de anemia falciforme clinicamente estáveis Quality of sleep and pulmonary function in clinically stable adolescents with sickle cell anemia

Directory of Open Access Journals (Sweden)

Lisliê Capoulade Nogueira Arrais de Souza

2007-06-01

Full Text Available OBJETIVO: Avaliar a qualidade de sono e função pulmonar em adolescentes portadores de anemia falciforme (AF, clinicamente estáveis. MÉTODOS: Estudo trasversal descritivo de 50 pacientes portadores de AF submetidos a polissonografia noturna e espirometria no Hospital Universitário de Brasília. Analisamos dados antropométricos, polissonográficos e de função pulmonar. Dividimos os pacientes em dois grupos segundo a saturação periférica de oxigênio (SpO2 em sono com movimentos oculares rápidos (MOR: SpO2 93%. Realizamos estatística descritiva, teste t de Student, qui-quadrado e correlação de Pearson. RESULTADOS: A média de idade foi de 13,9 ± 2,5 anos. O tempo total de sono e percentagem do sono em MOR estavam diminuídos; dois pacientes (4% não apresentaram sono MOR. Latência de sono MOR, número de despertares, movimentação em sono, mudança de estágio, índice de distúrbios respiratórios e índice de apnéia obstrutiva estavam aumentados. Entre os dois grupos, houve diferenças estatisticamente significativas na maioria das variáveis polissonográficas. A SpO2 em sono MOR correlacionou-se de forma forte e positiva com a SpO2 em vigília, bem como com a SpO2 em sono não-MOR; e correlacionou-se de forma forte e negativa com a percentagem do tempo total de sono em que a SPO2 foi OBJECTIVE: To evaluate quality of sleep and pulmonary function in clinically stable adolescents with sickle cell anemia (SCA. METHODS: A cross-sectional descriptive study involving 50 patients with SCA submitted to nocturnal polysomnography and spirometry at the Brasília University Hospital. Anthropometric, polysomnographic and pulmonary function data were analyzed. Patients were divided into two groups according to oxygen saturation by pulse oximetry (SpO2 during rapid eye movement (REM sleep: SpO2 93%. Descriptive statistics, Student's t-test, chi-square test and Pearson's correlation coefficient were used. RESULTS: Mean age was 13.9 ± 2

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

Science.gov (United States)

Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

2017-02-22

All-inorganic perovskite CsPbX 3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX 3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr 3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr 3 /PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr 3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

estudo comparativo entre sujeitos com boa e má qualidade do sono

OpenAIRE

Vicente, Sónia Lisete Pacheco

2009-01-01

Dissertação de Mestrado apresentada à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Psicologia, especialização em Psicologia Clínica e da Saúde. Resumo: O Sono é um bem precioso, indispensável a um bom equilíbrio. A vida de cada pessoa é uma série de ritmos que influenciam e regulam a função fisiológica e as respostas comportamentais. Desde muito cedo, é possível transmitir às crianças o prazer de dormir e os bons hábitos. Isto é quase g...

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Use of non-volatile memories for SSC detector readout

International Nuclear Information System (INIS)

Fennelly, A.J.; Woosley, J.K.; Johnson, M.B.

1990-01-01

Use of non-volatile memory units at the end of each fiber optic bunch/strand would substantially increase information available from experiments by providing a complete event history, in addition to easing real time processing requirements. This may be an alternative to enhancing technology to optical computing techniques. Available and low-risk projected technologies will be surveyed, with costing addressed. Some discussion will be given to covnersion of optical signals, to electronic information, concepts for providing timing pulses to the memory units, and to the magnetoresistive (MRAM) and ferroelectric (FERAM) random access memory technologies that may be utilized in the prototype system

Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

Migration of residual nonvolatile and inorganic compounds from recycled post-consumer PET and HDPE

Energy Technology Data Exchange (ETDEWEB)

Dutra, Camila; Reyes, Felix G.R., E-mail: reyesfgr@fea.unicamp.br [Universidade de Campinas (UNICAMP), SP (Brazil). Escola de Engenharia dos Alimentos. Dept. de Ciencias dos Alimentos; Freire, Maria Teresa de A. [Universidade de Sao Paulo (USP), Pirassununga, SP (Brazil). Fac. de Ciencia Animal e Engenharia dos Alimentos. Dept. de Engenharia dos Alimentos; Nerin, Cristina; Bentayeb, Karim; Rodriguez-Lafuente, Angel; Aznar, Margarita [Dept. of Analytical Chemistry, Arago Inst. of Engineering Research, University of Zaragoza (Spain)

2014-04-15

Migration of nonvolatile and inorganic residual compounds from post-consumer recycled polyethylene terephthalate (PET) submitted to cleaning processes for subsequent production of materials intended to food contact, as well as from multilayer packaging material containing post-consumer recycled high-density polyethylene (HDPE) was determined. Tests were carried out using food simulant. Nonvolatile organic contaminants from PET, determined by liquid chromatography-mass spectrometry (UPLC-QqQ/MS), showed significant migration reduction as consequence of the more complex cleaning technologies applied. However, contaminants not allowed by Brazilian and European Union regulations were identified even in deep cleaning samples. Results from multilayer HDPE showed a greater number of contaminants when compared to recycled pellets. Inorganic contaminants, determined by inductively coupled plasma mass spectrometry were below the acceptable levels. Additional studies for identification and quantitation of unknown molecules which were not possible to identify in this study by UPLC-QqQ/MS are required to ascertain the safety of using post-consumer recycled packaging material. (author)

Investigação da ativação seletiva de neurônios dopaminérgicos da substância negra pars compacta promovida pela privação de sono REM em ratos

OpenAIRE

Proença, Mariana Bordinhão

2013-01-01

Resumo: Atualmente, vários estudos abordam a ligação entre o sono e a neurotransmissão dopaminérgica, focando nos mecanismos pelos quais a doença de Parkinson (DP) e o sono podem ser entrelaçados. Por conseguinte, as variações nas atividades durante os ciclos de sono, ou ao nível de corpos celulares dopaminérgicos na área tegmental ventral (VTA) e / ou na substância negra pars compacta (SNPC) podem afetar funções como a memória. Deste modo, foram realizadas quantificações neuroquímicas de DA,...

Sleep quality in type 2 diabetics Calidad del sueño en diabéticos tipo 2 Qualidade do sono em diabéticos do tipo 2

Directory of Open Access Journals (Sweden)

Maria Carolina Belo da Cunha

2008-10-01

Full Text Available Sleeping disorders in type 2 diabetic patients constitute risk factors for aggravating diabetes since they can affect the metabolic control through insulin resistance syndrome. This was an observational, cross-sectional study. The majority (52% of subjects had scores indicating poor sleep quality. The Pittsburgh Sleep Quality Index (PSQI scores showed patients with a time after diagnosis over 10 years and hypertension had the poorest sleep quality. For those with hemoglobin A1c > 7% taking sleeping medicines and those who had normal body mass index (BMI, the sleep quality was even poorer. The findings of the present study reinforce the relevance of this topic since there are no specific tools for sleep evaluation of type 2 diabetics making it difficult to make any assertions on the sleep quality of these patients.Los disturbios del sueño en diabéticos del tipo 2, constituyen factores de riesgo para el agravamiento de la diabetes, pues pueden interferir en el control metabólico a través del síndrome de la resistencia a la insulina. El estudio fue del tipo observacional-transversal. La calidad del sueño fue investigada en 50 diabéticos del tipo 2, a quienes se aplicó el Índice de Calidad del Sueño de Pittsburgh (PSQI. La mayoría (52% presentó puntuaciones del PSQI, que indican calidad del sueño mala. Aquellos con tiempo de diagnóstico superior a 10 años y con hipertensión poseían peor calidad del sueño. Para aquellos con valores de Hemoglobina A1c > 7%, que usaban medicamentos para dormir y los que presentaron IMC normal, la calidad del sueño se mostró peor. Lo encontrado en esta investigación refuerza la relevancia de la temática, ya que no existen instrumentos específicos para evaluar el sueño del diabético del tipo 2, dificultando afirmaciones sobre la calidad del sueño del diabético.Distúrbios do sono em diabéticos do tipo 2 constituem fatores de risco para o agravamento do diabetes, pois podem interferir no

Sleep disorders and quality of life of harvesters rural labourers Distúrbios do sono e qualidade de vida de trabalhadores rurais safristas

Directory of Open Access Journals (Sweden)

Joseane Lima

2010-06-01

Full Text Available The various kinds of work may interfere in the laborer's quality of sleep. Among the factors, the unemployment caused by the period between the coffee harvests on the agriculture of South Minas may influence the appearance of anxiety and depression symptoms, and it may cause impairments to the quality of life and changes in the rural laborers' pattern of sleep. OBJECTIVE: To appraise the sleep and the effects on the quality of life in the rural laborers in the period between the coffee harvests. METHOD: In the study-group, 40 patients, rural laborers, were evaluated, and in the control-group, 40 patients, fixed laborers. Instruments used: clinical interview, The Pittsburgh Sleep Quality, Index Beck Anxiety Inventory, Hamilton Depression Rating Scale, and World Health Organization Quality of Life. RESULTS: The study-group showed impairment in the quality of the sleep; anxiety and depression signals and symptoms were high in both groups; being them higher in the harvesters laborers; the quality of life presented good levels in both groups, with losses in the domain "social relationship" between the harvesters; the sleep disturbances influenced the appearance of anxiety and depression signs and symptoms, but they did not interfere in the perception of the quality of life. CONCLUSION: The rural laborers that have fixed labors are less exposed to the symptoms of anxiety and depression - along with sleep disorders - than the harvesters laborers. Thus, the study-group's perception of the quality of life is better than the control-group's.As diversas formas de trabalho podem interferir na qualidade do sono do trabalhador. Entre os fatores, o desemprego ocasionado pela entressafra da cultura cafeeira nas lavouras sul mineiras pode influenciar no surgimento de sintomas de ansiedade e de depressão e causar prejuízos na qualidade de vida e alterações no padrão do sono dos trabalhadores rurais. OBJETIVO: Avaliar o sono e as repercussões na qualidade de

Characteristics of a non-volatile liquid propellant in liquid-fed ablative pulsed plasma thrusters

Science.gov (United States)

Ling, William Yeong Liang; Schönherr, Tony; Koizumi, Hiroyuki

2017-02-01

In the past several decades, the use of electric propulsion in spacecraft has experienced tremendous growth. With the increasing adoption of small satellites in the kilogram range, suitable propulsion systems will be necessary in the near future. Pulsed plasma thrusters (PPTs) were the first form of electric propulsion to be deployed in orbit, and are highly suitable for small satellites due to their inherent simplicity. However, their lifetime is limited by disadvantages such as carbon deposition leading to thruster failure, and complicated feeding systems required due to the conventional use of solid propellants (usually polytetrafluoroethylene (PTFE)). A promising alternative to solid propellants has recently emerged in the form of non-volatile liquids that are stable in vacuum. This study presents a broad comparison of the non-volatile liquid perfluoropolyether (PFPE) and solid PTFE as propellants on a PPT with a common design base. We show that liquid PFPE can be successfully used as a propellant, and exhibits similar plasma discharge properties to conventional solid PTFE, but with a mass bit that is an order of magnitude higher for an identical ablation area. We also demonstrate that the liquid PFPE propellant has exceptional resistance to carbon deposition, completely negating one of the major causes of thruster failure, while solid PTFE exhibited considerable carbon build-up. Energy dispersive X-ray spectroscopy was used to examine the elemental compositions of the surface deposition on the electrodes and the ablation area of the propellant (or PFPE encapsulator). The results show that based on its physical characteristics and behavior, non-volatile liquid PFPE is an extremely promising propellant for use in PPTs, with an extensive scope available for future research and development.

A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report

Energy Technology Data Exchange (ETDEWEB)

DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R.; SMITH,PAUL M.; VANHEUSDEN,KAREL J.; WARREN,WILLIAM L.

1999-11-01

Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

Comparison of needles size in pediatric renal biopsy with sono-guided percutaneous-automated gun technique

International Nuclear Information System (INIS)

Kim, Jong Chul; Park, Jin Yong

1997-01-01

To compare the efficacy of a 20-gauge and an 18-gauge needle in sono-guided percutaneous automated gun biopsy for establishing the specific diagnosis of renal parenchymal disease in pediatric kidneys. In 60 pediatric patients with renal parenchymal diseases, percutaneous sono-guided gun biopsy was performed by an experienced radiologist. In two groups of 30 patients, regardless of their age, two needle passes were performed, using alternately an 18-gauge or a 20-gauge biopsy needle. The core of renal tissue thus obtained was examined with light, immunofluorescent or electron microscopy by the renal pathologist. The mean number of intact glomeruli of whole tissue core per biopsy, as seen on the light microscopy, and post-bioptic complications were compared between the two different needle size groups. The number (mean±1 standard deviation) of glomeruli obtained per biopsy was 17±8 in the 18-gauge needle group, and 14±5 in the 20-gauge group. Between two groups, there was no major post-bioptic complication requiring specific treatment, nor a statistically significant difference in the frequency of minor complications. Even though more glomeruli were obtained with an 18-gauge needle, the number obtained with a 20-gauge needle also permitted adequate pathologic examination. Both an 18-gauge and a 20-gauge needle may thus be suitable for renal biopsy in pediatric patients

Overview of radiation effects on emerging non-volatile memory technologies

Directory of Open Access Journals (Sweden)

Fetahović Irfan S.

2017-01-01

Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory.

Science.gov (United States)

1981-03-01

HEWLETT-PACKARD BOX 3310 100 MARKET ST APT 1 3404 EAST HARMONY RD2U ATTN J. M. KIRSCH, MTS ATTN R. SCHAEFER ATTN L. W. JAMES, MTS FULLERTON, CA 92633...RADIO SYS SPERRY UNICORN 1300 S ROGERS 367 ORCHARD STREET 52-21 65 PL AT’rN J. F. PRATHER, MGR CEN ATTN I. A. PAULL, ES ATTN W. BURSTEIN, ENGR

Padrão do ciclo sono-vigília e sua relação com a ansiedade em estudantes universitários Sleep/wake cycle pattern and its relationship with anxiety in college students

Directory of Open Access Journals (Sweden)

Katie Moraes de Almondes

2003-04-01

Full Text Available Neste trabalho, foram investigadas as relações entre o ciclo sono-vigília e a ansiedade. O ciclo sono-vigília e traço e estado de ansiedade foram avaliados em 37 estudantes do segundo ano do curso médico. Os estudantes responderam ao Índice de Qualidade de Sono de Pittsburgh - IQSP, ao Inventário de Estado e Traço de Ansiedade - IDATE e a um questionário de matutinidade - vespertinidade (cronotipo. Todos registraram seu sono em um diário durante duas semanas. Os resultados mostraram que os estudantes de medicina tinham altos escores de traço e estado de ansiedade. Aqueles que tinham maiores escores de traço de ansiedade acordavam mais cedo nos dias de semana e finais de semana enquanto os que apresentavam irregularidade do seu ciclo sono-vigília apresentaram maior estado de ansiedade. Sugere-se que há uma relação entre o ciclo sono-vigília e a ansiedade.This paper examines the relationship between the sleep/wake cycle and anxiety in medical students. The sleep/wake cycle and anxiety were evaluated in 37 second year medical school students. The volunteers answered a morningness-eveningness questionnaire, Pittsburgh Sleep Quality Index - PSQI and state and trait of anxiety inventory - STAI; all kept a sleep/wake diary for two weeks. The results showed that the students had high anxiety trait and state. Students who had high anxiety trait had an earlier sleep offset on weekdays and weekend, and students who displayed irregularity in the sleep/wake cycle had high anxiety state. These results suggest a relationship between the sleep/wake cycle and anxiety.

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Sedentarismo e hábitos de sono entre adolescentes de 10 a 19 anos estudantes de escolas estaduais do município de Ribeirão Preto

OpenAIRE

Adriana Lucas Louro

2015-01-01

O presente estudo objetivou estudar as características relacionadas ao nível de atividade física e hábitos de sono entre adolescentes de 10 a 19 anos de idade. Trata-se de um estudo transversal, observacional e descritivo que foi realizado por meio de entrevistas, o qual foram utilizados dois questionários, um contendo questões acerca dos hábitos de sono, e o IPAQ para estudar o nível de atividade física. Foram estudados 535 adolescentes de ambos os sexos, estudantes de escolas públicas estad...

Ecocardiografia em pacientes com apneia do sono grave com e sem pressão arterial controlada: Estudo transversal

Directory of Open Access Journals (Sweden)

Denis Martinez

2016-01-01

Full Text Available Introdução: A apneia obstrutiva do sono (AOS afeta a anatomia e função do coração. Ocorre hipertensão arterial em metade dos casos de AOS, dificultando atribuir a etiologia dessas alterações separadamente à hipertensão arterial ou à apneia do sono. Métodos: Estudo transversal de pacientes com índice de apneia-hipopneia maior que 50 eventos por hora. As variáveis ecocardiográficas comparadas em indivíduos com hipertensão arterial controlada e não controlada foram: 1 fração de ejeção, 2 diâmetro da aorta, 3 diâmetro do átrio esquerdo, 4 diâmetro de ventrículo direito, 5 diâmetros do ventrículo esquerdo diastólico e sistólico, 6 percentagem delta, 7 espessura do septo, 8 espessura da parede posterior. Resultados: Foram incluídos 83 voluntários, 50 com pressão arterial não controlada. Em média, a idade era 47±9,5 anos, o índice de massa corporal 34±5,4 Kg/m2, o índice de apneia-hipopneia 86±18 eventos/hora. Sessenta pacientes apresentaram anormalidade no ecocardiograma. A hipertrofia de ventrículo esquerdo foi o achado mais comum, sem diferença de frequência em controles (39% e em hipertensos (48%, seguida por disfunção diastólica em controles (27% e em hipertensos (32%. Conclusões: Indivíduos com apneia do sono grave e pressão arterial controlada apresentam alterações no ecocardiograma de tipo e frequência semelhantes aos com hipertensão não controlada. Isso sugere que a apneia do sono pode causar dano cardíaco independentemente de hipertensão. Quando não explicáveis por hipertensão arterial, achados como hipertrofia de ventrículo esquerdo podem ser provocados por apneia do sono.   Introduction:  Obstructive sleep apnea (OSA affects the cardiac anatomy and function. Hypertension occurs in half the OSA cases, making it difficult to attribute the cause of these changes separately to arterial hypertension or sleep apnea. Methods: Prospective cross-sectional study of volunteers with apnea

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Release and nonvolatile operation of carbon nanotube nanorelay by resonant vibration

Energy Technology Data Exchange (ETDEWEB)

Kagota, Tatsuya; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji, E-mail: akita@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Nagataki, Atsuko [Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531 (Japan); Materials Analysis Research Center, KRI, Inc., Osaka 554-0051 (Japan)

2013-11-11

We investigated the release of a stuck carbon nanotube (CNT) cantilever beam in nanorelay applications using a nano-manipulator. Even with strong adhesion induced by electrostatic attraction that is 100 times stronger than the van der Waals interaction, successful release of a nanotube arm from a stuck state was realized by the application of a resonant vibration to the stuck CNT arm. Furthermore, nonvolatile operation of the nanotube nanorelay was demonstrated by the application of the resonant vibration to the stuck CNT arm.

Influence of mineral salts upon activity of Trichoderma harzianum non-volatile metabolites on Armillaria spp. rhizomorphs

Directory of Open Access Journals (Sweden)

Krystyna Przybył

2011-01-01

Full Text Available Effect of non-volatile metabolites of Trichoderma harzianum together with certain salts containing Mg++, Fe+++, Mn++, Cu++, Al+++, Ca++, K++, Na+, PO4--- and SO3--- on the production and length of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae was studied. In pure medium, T. harzianum exhibited stimulating effect on rhizomorphs of A. borealis (both number and length and A. ostoyae (only initiation. Cu++ salt totaly inhibited the initiation of rhizomorphs of Armillaria borealis, A. gallica and A. ostoyae. Effect of other compounds on the activity of T. harzianum depended on Armillaria species. The majority of chemical compounds tested supressed the activity of non-volatile metabolites of T. harzianum. Evident stimulating effect was observed under influence of sulphate salts consisting Al++ and Fe+++ on the rhizomorph number of A. borealis and A. gallica, respectively.

Alterações cardiovasculares na síndrome da apnéia obstrutiva do sono Cardiovascular comorbidities and obstructive sleep apnea

Directory of Open Access Journals (Sweden)

Fátima Dumas Cintra

2006-06-01

Full Text Available A síndrome da apnéia obstrutiva do sono (SAHOS é uma condição prevalente na população, associada a maior risco cardiovascular, freqüentemente não-diagnosticada. O reconhecimento da síndrome requer alto grau de suspeita clínica, especialmente por cardiologistas, e pode ser confirmada por meio da polissonografia. O tratamento da síndrome com o uso de CPAP (pressão positiva na via aérea superior é altamente eficaz, melhorando o padrão respiratório durante o sono, instituindo o sono reparador e, dessa forma, otimizando a qualidade de vida desses pacientes, além de atenuar ou reverter muitas das complicações cardiovasculares relacionadas a SAHOS. Este artigo aborda a fisiopatologia e os aspectos clínicos das comorbidades cardiovasculares associadas à síndrome.Obstructive sleep apnea-hypopnea syndrome (OSAHS is a prevalent condition in the general population. It is associated with increased cardiovascular risk and often goes unrecognized. Its diagnose requires a high degree of clinical suspicion, particularly on the part of cardiologists, and it may be confirmed by polysomnography. Continuous positive airway pressure (CPAP therapy is highly effective, since it improves sleep breathing pattern, promotes restful sleep and thus enhances the quality of life of these patients, in addition to attenuating or reversing many cardiovascular complications related to OSAHS. This paper addresses the pathophysiology and clinical features of cardiovascular comorbidities associated with the syndrome.

GMAG Dissertation Award Talk: Zero-moment Half-Metallic Ferrimagnetic Semiconductors

Science.gov (United States)

Jamer, Michelle E.

2015-03-01

Low- and zero-moment half-metallic ferrimagnetic semiconductors have been proposed for advanced applications, such as nonvolatile RAM memory and quantum computing. These inverse-Heusler materials could be used to generate spin-polarized electron or hole currents without the associated harmful fringing magnetic fields. Such materials are expected to exhibit low to zero magnetic moment at room temperature, which makes them well-positioned for future spin-based devices. However, these compounds have been shown to suffer from disorder. This work focuses on the synthesis of these compounds and the investigation of their structural, magnetic, and transport properties. Cr2CoGa and Mn3Al thin films were synthesized by molecular beam epitaxy, and V3Al and Cr2CoAl were synthesized via arc-melting. Rietveld analysis was used to determine the degree of ordering in the sublattices as a function of annealing. The atomic moments were measured by X-ray magnetic circular and linear dichroism confirmed antiferromagnetic alignment of sublattices and the desired near-zero moment in several compounds. In collaboration with George E. Sterbinsky, Photon Sciences Directorate, Brookhaven National Laboratory; Dario Arena Photon Sciences Directorate, Brookhaven National Laboratory; Laura H. Lewis, Chemical Engineering, Northeastern University; and Don Heiman, Physics, Northeastern University. NSF-ECCS-1402738, NSF-DMR-0907007.

Sleep disorders are associated with impulsivity in school children aged 8 to 10 years Distúrbios de sono associam-se com impulsividade em escolares de 8 a 10 anos de idade

Directory of Open Access Journals (Sweden)

Marilaine Medeiros

2005-09-01

Full Text Available CONTEXT: Sleep has an important function in the physical and emotional development of children. Some studies suggest an association between impulsivity and sleep disorders. However, little is known about this association in schoolchildren aged 8 to 10 years. METHOD: We studied 1180 children, 547 with sleep disorders (SD and 633 without SD (control group, classified with SD questionnaires. Within the SD group, 53 children with sleep-related respiratory disorders (SRRD and 521 children with non-respiratory sleep disorders (NRSD were analyzed. We acessed emotional indicators of impulsivity with Bender test. RESULTS: More SD children presented impulsivity than control group (pCONTEXTO: O sono tem função importante no desenvolvimento físico e emocional das crianças. Alguns estudos sugerem a associação de impulsividade e distúrbios do sono, sendo pouco conhecida esta associação em escolares na faixa etária de 8 a 10 anos. MÉTODO: Estudamos 1180 crianças, 547 com distúrbio do sono (DS e 633 normais (grupo controle, classificadas através de questionários sobre distúrbios do sono. Dentro do grupo DS, analisamos separadamente as crianças com distúrbio respiratório relacionado ao sono (DRRS e com distúrbios não respiratórios do sono (DNRS. Aplicamos o Teste Gestáltico de Bender (TB para detectar os indicadores emocionais de impulsividade. RESULTADOS: Maior número de crianças com DS apresentaram impulsividade em relação às crianças do grupo controle (p<0,05. Mais crianças de 10 anos de idade do grupo DNRS apresentaram impulsividade em relação ao grupo controle da mesma idade (p=0,001. Impulsividade e DRRS estiveram associados apenas entre as crianças de 8 anos de idade (p<0,05. CONCLUSÃO: Crianças com DS em geral, crianças com DRRS de 8 anos de idade, e crianças com 10 anos de idade do grupo DNRS apresentaram maior proporção de indicadores de impulsividade do que crianças do grupo controle.

WORKSHOP REPORT - CONSIDERATIONS FOR DEVELOPING LEACHING TEST METHODS FOR SEMI- AND NON-VOLATILE ORGANIC COMPOUNDS

Science.gov (United States)

The report provides a summary of the information exchange at a workshop on the potential for release of semi- or non-volatile organic constituents at contaminated sites where sub-surface treatment has been used to control migration, and from waste that is disposed or re-used. The...

Hábitos do sono, estresse e ansiedade de crianças com bruxismo

OpenAIRE

Mariana Fernandes Calderan

2015-01-01

Ainda não existe consenso sobre os aspectos etiológicos e sinais e sintomas do bruxismo, especialmente em crianças. Poucas são as evidências que demonstraram a relação entre estresse, ansiedade e bruxismo. Além disso, a força de mordida pode ser alterada em pacientes com este tipo de manifestação. O presente estudo teve por objetivos avaliar a relação do bruxismo com: ansiedade, estresse, hábitos do sono, força máxima de mordida, a presença de sinais de DTM, características morfológicas e fun...

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

KAUST Repository

Wang, Jer-Chyi

2016-11-23

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Qualidade de sono e sua relação com o rendimento acadêmico em estudantes universitários de turnos distintos = Sleep quality and its relationship with academic performance in college students of different shifts

Directory of Open Access Journals (Sweden)

Araújo, Danilo de Freitas

2012-01-01

Full Text Available Analisou-se a correlação entre níveis de sonolência, qualidade do sono e rendimento acadêmico de graduandos. A amostra (média de idade: 24 anos, DP = 8,09 foi constituída por 109 estudantes do turno matutino e 125 do noturno. Preencheram ficha sócio-demográfica, Escala de Sonolência de Epworth e Índice de Qualidade de Sono de Pittsburgh. O rendimento acadêmico foi solicitado aos coordenadores dos cursos. Os resultados mostraram para sonolência média de 9,03 pontos (DP = 4,01 no turno matutino, e 9,7 (DP = 4,01 no noturno, e para qualidade do sono, 5,54 (DP = 2,99 e 5,53 (DP = 3,08, respectivamente. Foram constatadas diferenças significativas em sonolência (t = -29,55; p 0,05 e noturno (r = 0,03; p > 0,05. Os dados mostraram que os estudantes do turno noturno são mais sonolentos e possuem pior qualidade do sono, embora isso não influa sobre seu rendimento

Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

Energy Technology Data Exchange (ETDEWEB)

Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

2014-02-15

In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Surface Charge Measurement of SonoVue, Definity and Optison: A Comparison of Laser Doppler Electrophoresis and Micro-Electrophoresis.

Science.gov (United States)

Ja'afar, Fairuzeta; Leow, Chee Hau; Garbin, Valeria; Sennoga, Charles A; Tang, Meng-Xing; Seddon, John M

2015-11-01

Microbubble (MB) contrast-enhanced ultrasonography is a promising tool for targeted molecular imaging. It is important to determine the MB surface charge accurately as it affects the MB interactions with cell membranes. In this article, we report the surface charge measurement of SonoVue, Definity and Optison. We compare the performance of the widely used laser Doppler electrophoresis with an in-house micro-electrophoresis system. By optically tracking MB electrophoretic velocity in a microchannel, we determined the zeta potentials of MB samples. Using micro-electrophoresis, we obtained zeta potential values for SonoVue, Definity and Optison of -28.3, -4.2 and -9.5 mV, with relative standard deviations of 5%, 48% and 8%, respectively. In comparison, laser Doppler electrophoresis gave -8.7, +0.7 and +15.8 mV with relative standard deviations of 330%, 29,000% and 130%, respectively. We found that the reliability of laser Doppler electrophoresis is compromised by MB buoyancy. Micro-electrophoresis determined zeta potential values with a 10-fold improvement in relative standard deviation. Copyright © 2015 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

International Nuclear Information System (INIS)

Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2012-01-01

Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

Big endotelina-1 e óxido nítrico em pacientes idosos hipertensos com e sem síndrome da apneia-hipopneia obstrutiva do sono

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Iara Felicio Anunciato

2013-10-01

Full Text Available FUNDAMENTO: O papel do estresse oxidativo em pacientes idosos hipertensos com síndrome de apneia-hipopneia obstrutiva do sono (SAHOS é desconhecido. Objetivo: O objetivo foi avaliar os níveis de Big Endotelina-1 (Big ET-1 e Óxido Nítrico (NO em pacientes idosos hipertensos com e sem SAHOS moderada a grave. MÉTODOS: Os voluntários permaneceram internados durante 24 horas. Obtivemos os seguintes dados: índice de massa corporal (IMC, Monitorização Ambulatorial da Pressão Arterial (MAPA - 24 horas, e medicação atual. Sangue arterial foi coletado às 7:00 h e às 19:00 h para determinar níveis plasmáticos de NO e Big ET-1. A oximetria de pulso foi realizada durante o sono. A correlação de Pearson, Spearman e análise de variância univariada foram utilizadas para a análise estatística. RESULTADOS: Foram estudados 25 sujeitos com SAHOS (grupo 1 e 12 sem SAHOS (grupo 2, com idades de 67,0 ± 6,5 anos, 67,8 ± 6,8 anos, respectivamente. Não foram observadas diferenças significativas entre os grupos em IMC; no número de horas de sono; PA diastólica e sistólica em 24 h; PA de vigília; PA no sono; ou medicamentos usados para controlar a PA. Não foram detectadas diferenças nos níveis de NO e Big ET-1 plasmáticos às 19:00 h, mas às 7:00 h os níveis de de Big ET-1 foram mais altos (p = 0,03. No grupo 1, correlação negativa também foi observada entre a saturação de oxihemoglobina arterial média e a PA sistólica - 24 horas (p = 0,03, r = -0,44, e Big ET-1 (p = 0,04, r = 0,41. CONCLUSÕES: Na comparação entre idosos hipertensos com e sem SAHOS com PA e IMC semelhantes, observou-se níveis mais elevados de Big ET-1 após o sono no grupo SAHOS. Os níveis de NO não diferiram entre os pacientes hipertensos com ou sem SAHOS.

A comparative study of ascending urethrogram and sono-urethrogram in the evaluation of stricture urethra

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Ravikumar B.R.

2015-04-01

Full Text Available To compare the efficacy of sono-urethrogram and ascending urethrogram in the evaluation of stricture urethra. Materials and Methods In this prospective study 40 patients with obstructive lower urinary tract symptoms and suspected to be having stricture urethra were subjected to ascending urethrogram and sonourethrogram. The radiologist was blinded to the findings of ascending urethrogram. All the sonourethrograms were done by the same radiologist. The findings of sonourethrogram & ascending urethrogram were compared with the findings of cystoscopy and intra-operative findings. The specificity, sensitivity,positive predictive value and negative predictive value of each modality in the diagnosis of various urethral anomalies were estimated. Results The sonourethrogram identified stricture disease in all the patients who had abnormal ascending urethrogram. In addition, other abnormalities like spongiofibrosis, diverticula and stones which were not picked up in ascending urethrogram were diagnosed by sonourethrogram. The cystoscopic and intra-operative findings with respect to stricture length, diameter and spongiofibrosis correlated well with sono-urethrogram findings. 5 patients who had stricture in the ascending urethrogram were found to be having the normal urethra in sonourethrogram and confirmed by cystoscopy. Conclusion sonourethrogram is an effective alternative to ascending urethrogram in the evaluation of stricture urethra. It is more sensitive in the diagnosis of anterior urethral strictures than posterior urethral strictures. It is superior to ascending urethrogram in the identification of spongiofibrosis, diameter and length of the stricture. The complications were lower in sonourethrogram group compared to ascending urethrogram.

A comparative study of ascending urethrogram and sono-urethrogram in the evaluation of stricture urethra.

Science.gov (United States)

Ravikumar, B R; Tejus, Chiranjeevi; Madappa, K M; Prashant, Dharakh; Dhayanand, G S

2015-01-01

To compare the efficacy of sono-urethrogram and ascending urethrogram in the evaluation of stricture urethra. In this prospective study 40 patients with obstructive lower urinary tract symptoms and suspected to be having stricture urethra were subjected to ascending urethrogram and sonourethrogram. The radiologist was blinded to the findings of ascending urethrogram. All the sonourethrograms were done by the same radiologist. The findings of sonourethrogram & ascending urethrogram were compared with the findings of cystoscopy and intra-operative findings. The specificity, sensitivity,positive predictive value and negative predictive value of each modality in the diagnosis of various urethral anomalies were estimated. The sonourethrogram identified stricture disease in all the patients who had abnormal ascending urethrogram. In addition, other abnormalities like spongiofibrosis, diverticula and stones which were not picked up in ascending urethrogram were diagnosed by sonourethrogram. The cystoscopic and intra-operative findings with respect to stricture length, diameter and spongiofibrosis correlated well with sono-urethrogram findings. 5 patients who had stricture in the ascending urethrogram were found to be having the normal urethra in sonourethrogram and confirmed by cystoscopy. sonourethrogram is an effective alternative to ascending urethrogram in the evaluation of stricture urethra. It is more sensitive in the diagnosis of anterior urethral strictures than posterior urethral strictures. It is superior to ascending urethrogram in the identification of spongiofibrosis, diameter and length of the stricture. The complications were lower in sonourethrogram group compared to ascending urethrogram.

A graphene-based non-volatile memory

Science.gov (United States)

Loisel, Loïc.; Maurice, Ange; Lebental, Bérengère; Vezzoli, Stefano; Cojocaru, Costel-Sorin; Tay, Beng Kang

2015-09-01

We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

Fonoaudiologia X ronco/apneia do sono Speech therapy and snore and sleep apnea

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Elisângela Barros Soares

2010-04-01

Full Text Available TEMA: sendo o sono necessário para termos energia, o ronco e a apneia do sono tornam-se obstáculos que acarretam problemas de saúde, como também problemas sociais, conjugais, escolares, entre outros. OBJETIVO: contribuir para um maior conhecimento do profissional fonoaudiólogo sobre as causas, consequências, diagnóstico e formas de tratamento da apneia obstrutiva do sono (AOS, a fim de favorecer a definição da conduta por este profissional, seja ela, encaminhar para um diagnóstico, tratar (por meio de fonoterapia essa patologia ou indicar o tratamento médico, seja ele, cirúrgico ou conservador. CONCLUSÃO: as possíveis alterações fonoaudiológicas encontradas nestes pacientes são: língua alargada apresentando hipotonia, palato mole com volume aumentado, dificuldade na alimentação devido ao aporte insuficiente de ar e ao bruxismo, possivelmente causado pela tensão e ansiedade decorrentes das noites mal dormidas. Outras alterações podem ser encontradas decorrentes do tratamento cirúrgico empregado em alguns casos, como a disfagia ou até mesmo alterações na fala e na ressonância da fala decorrente de uma uvulopalatoplastia. O enfoque do tratamento fonoaudiológico é a mioterapia dos músculos envolvidos, priorizando a musculatura palatal. Percebe-se que o fonoaudiólogo pode contribuir para amenizar os sintomas encontrados nestas patologias, proporcionando uma qualidade de vida melhor aos seus portadores.BACKGROUND: sleeping is necessary to provide us with energy. However, snoring and sleep apnea become obstacles that cause not only health problems, but also social, marital and educational issues. PURPOSE: contribute with a better understanding of the causes to the speech therapist, as well as the diagnosis and forms of treatment for Obstructive Sleep Apnea (OSA. Facilitate the definition of conduct by the therapist, be it a guide for a diagnosis, a treatment for that disease (through speech therapy or the indication of

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

Science.gov (United States)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

Hipersonolência diurna e variáveis polissonográficas em doentes com síndroma de apneia do sono Daytime sleepiness and polysomnographic variables in sleep apnoea patients

Directory of Open Access Journals (Sweden)

O Mediano

2007-12-01

Full Text Available A síndroma de apneia obstrutiva do sono (SAOS caracteriza-se por episódios repetidos de obstrução da via aérea superior, hipoxemia nocturna e fragmentação do sono. A hipersonolência diurna constitui um sintoma frequente nos doentes com esta síndroma, embora possa estar ausente. A sua presença representa uma limitação significativa da qualidade de vida do indivíduo, bem como um aumento da morbilidade e mortalidade da SAOS, visto ser um importante factor de risco para acidentes de viação e laborais, podendo originar alterações cognitivo-comportamentais relevantes. O mecanismo desencadeante de hipersonolência diurna não é claro. Alguns autores relacionaram esta com a arquitectura anormal do sono, o que, no entanto, não foi confirmado por outros investigadores. Alguns estudos salientaram a relação entre a hipersonolência diurna e os níveis de dessaturação nocturna da oxi-hemoglobina, mas este facto não foi comprovado cientificamente. O objectivo do presente trabalho foi analisar quais os mecanismos responsáveis pela sonolência diurna nos doentes com SAOS. Assim, numerosas variáveis registadas no estudo polissonográfico foram comparadas em dois grupos de indivíduos com esta patologia, apresentando um deles hipersonolência diurna inequívoca e o outro a total ausência da mesma. Foram avaliados 65 indivíduos seguidos no Departamento Respiratório do Hospital Universitário do Son Dureta (Palma de Maiorca que possuíam no registo poligráfico nocturno um índice de apneia/hipopneia (IAH >20/h. A sonolência excessiva foi determinada utilizando a escala de sono de Epworth (ESE e o teste de latência múltipla. A sua presença foi considerada sempre que o score de ESE >10 e o score do teste de latência múltipla 10 min. Cerca de 25 indivíduos foram excluídos devido a discrepância entre os resultados das referidas determinações. Dos 40 doentes restantes, 23 apresentavam hipersonolência diurna e 17 não. Nenhum dos

Caracterização dos padrões de dor, sono e alexitimia em pacientes com fibromialgia atendidos em um centro terciário brasileiro

Directory of Open Access Journals (Sweden)

Lazslo A. Avila

2014-10-01

Full Text Available Objetivos: Fibromialgia (FM é uma síndrome complexa, caracterizada por uma dor musculoesquelética crônica duradoura e difusa, derivada de causas não inflamatórias e classicamente associada à presença de pontos sensíveis específicos. No entanto, estudos destacaram outros sintomas importantes associados à má qualidade de vida (QDV em pacientes com FM, por exemplo, distúrbios do sono e alexitimia. Esse estudo teve por objetivo investigar os padrões de dor, sono e alexitimia de pacientes com FM em um centro terciário brasileiro. Métodos: 20 pacientes com FM acompanhados na clínica ambulatorial de reumatologia de um centro terciário brasileiro (Faculdade de Medicina de São José do Rio Preto - FAMERP, São Paulo, Brasil e 20 pacientes sem FM provenientes de outros serviços ambulatoriais da FAMERP completaram um questionário clínico e sociodemográfico, o Fibromyalgia Impact Questionnaire (FIQ, o Pittsburgh Sleep Quality Index (PSQI, o Toronto Alexithymia Scale (TAS-20 e o SF-36 (WHOQOL. Resultados: Os pacientes com FM tiveram desempenhos piores em todas as dimensões de QDV do SF-36 e escores mais altos no PSQI (P = 0,01 e no TAS-20 (P = 0,02. Pacientes com FM também tiveram escores significativamente mais altos em todos os domínios específicos do PSQI e TAS-20. Discussão: Os presentes dados concordavam com a literatura, evidenciando pior desempenho de pacientes com FM no impacto da dor, queixas de sono e maior presença de alexitimia. Conclusão: Estudos evidenciaram, além das queixas de dor, a presença de sintomas importantes e frequentemente subdiagnosticados, em pacientes com FM, como queixas relativas ao sono e alexitimia. Um conhecimento mais aprofundado desses distúrbios poderia melhorar a abordagem e o tratamento dos pacientes com FM.

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

Comparison of volatile and non-volatile metabolites in rice wine fermented by Koji inoculated with Saccharomycopsis fibuligera and Aspergillus oryzae.

Science.gov (United States)

Son, Eun Yeong; Lee, Sang Mi; Kim, Minjoo; Seo, Jeong-Ah; Kim, Young-Suk

2018-07-01

This study investigated volatile and nonvolatile metabolite profiles of makgeolli (a traditional rice wine in Korea) fermented by koji inoculated with Saccharomycopsis fibuligera and/or Aspergillus oryzae. The enzyme activities in koji were also examined to determine their effects on the formation of metabolites. The contents of all 18 amino acids detected were the highest in makgeolli fermented by S. fibuligera CN2601-09, and increased after combining with A. oryzae CN1102-08, unlike the contents of most fatty acids. On the other hand, major volatile metabolites were fusel alcohols, acetate esters, and ethyl esters. The contents of most fusel alcohols and acetate esters were the highest in makgeolli fermented by S. fibuligera CN2601-09, for which the protease activity was the highest, leading to the largest amounts of amino acods. The makgeolli samples fermented only by koji inoculated with S. fibuligera could be discriminated on PCA plots from the makgeolli samples fermented in combination with A. oryzae. In the case of nonvolatile metabolites, all amino acids and some metabolites such as xylose, 2-methylbenzoic acid, and oxalic acid contributed mainly to the characteristics of makgeolli fermented by koji inoculated with S. fibuligera and A. oryzae. These results showed that the formations of volatile and nonvolatile metabolites in makgeolli can be significantly affected by microbial strains with different enzyme activities in koji. To our knowledge, this study is the first report on the effects of S. fibuligera strains on the formation of volatile and non-volatile metabolites in rice wine, facilitating their use in brewing rice wine. Copyright © 2018. Published by Elsevier Ltd.

Expression of MEP Pathway Genes and Non-volatile Sequestration Are Associated with Circadian Rhythm of Dominant Terpenoids Emission in Osmanthus fragrans Lour. Flowers

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Riru Zheng

2017-10-01

Full Text Available Osmanthus fragrans Lour. is one of the top 10 traditional ornamental flowers in China famous for its unique fragrance. Preliminary study proved that the terpenoids including ionone, linalool, and ocimene and their derivatives are the dominant aroma-active compounds that contribute greatly to the scent bouquet. Pollination observation implies the emission of aromatic terpenoids may follow a circadian rhythm. In this study, we investigated the variation of volatile terpenoids and its potential regulators. The results showed that both volatile and non-volatile terpenoids presented circadian oscillation with high emission or accumulation during the day and low emission or accumulation during the night. The volatile terpenoids always increased to reach their maximum values at 12:00 h, while free and glycosylated compounds continued increasing throughout the day. The depletion of non-volatile pool might provide the substrates for volatile emission at 0:00–6:00, suggesting the sequestration of non-volatile compounds acted like a buffer regulating emission of terpenoids. Further detection of MEP pathway genes demonstrated that their expressions increased significantly in parallel with the evident increase of both volatile and non-volatile terpenoids during the day, indicating that the gene expressions were also closely associated with terpenoid formation. Thus, the expression of MEP pathway genes and internal sequestration both played crucial roles in modulating circadian rhythm of terpenoid emission in O. fragrans.

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Effects of tunnel oxide process on SONOS flash memory characteristics

International Nuclear Information System (INIS)

Li, Dong Hua; Park, Il Han; Yun, Jang-Gn; Park, Byung-Gook

2010-01-01

In this paper, various process conditions of tunnel oxides are applied in SONOS flash memory to investigate their effects on charge transport during the program/erase operations. We focus the key point of analysis on Fermi-level (E F ) variation at the interface of silicon substrate and tunnel oxide. The Si-O chemical bonding information which describes the interface oxidation states at the Si/SiO 2 is obtained by the core-level X-ray photoelectron spectroscopy (XPS). Moreover, relative E F position is determined by measuring the Si 2p energy shift from XPS spectrums. Experimental results from memory characteristic measurement show that MTO tunnel oxide structure exhibits faster erase speed, and larger memory window during P/E cycle compared to FTO and RTO tunnel oxide structures. Finally, we examine long-term charge retention characteristic and find that the memory windows of all the capacitors remain wider than 2 V after 10 5 s.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Science.gov (United States)

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

International Nuclear Information System (INIS)

McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.L.

1987-01-01

Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment

Properties of nonvolatile and antibacterial bioboard produced from bamboo macromolecules by hot pressing

Directory of Open Access Journals (Sweden)

Shengbo Ge

2018-03-01

Full Text Available Employing the antibacterial property of industrial bamboo vinegar (IBV and the photocatalytic degradation of TiO2, bamboo macromolecules were pretreated and processed into nonvolatile and antibacterial bio board (NVABB. The NVABB was then analyzed by conducting Fourier-transform infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. Results show that NVABB samples had average density of 0.96 g/cm3, which is appropriate for application. In terms of physical and mechanical properties, the best NVABB sample obtained from IBV, TiO2 and bamboo had an IBV pretreatment time of 10 min, 2% TiO2 and 1% bamboo charcoal. Fourier-transform infrared spectroscopy demonstrated that optimum conditions for hot pressing were a temperature of 170 °C, duration of 15 min and the addition of IBV and TiO2. Thermogravimetric analysis/differential thermal analysis curves suggest that the thermal degradation of NVABB was less than that of bamboo and that hot pressing obviously increased the thermal stability of HDBB samples. Analysis of the antimicrobial effect revealed that IBV pretreatment improves the antibacterial property of NVABB. Keywords: Industrial bamboo vinegar, Nonvolatile and antibacterial bio board, Bamboo macromolecules, Fourier-transform infrared spectroscopy, Thermogravimetric analysis/differential thermal analysis

Dietary exposure to volatile and non-volatile N-nitrosamines from processed meat products in Denmark

DEFF Research Database (Denmark)

Herrmann, Susan Strange; Duedahl-Olesen, Lene; Christensen, Tue

2015-01-01

the carcinogenicity for the majority of the non-volatile NA (NVNA) remains to be elucidated. Danish adults (15–75 years) and children (4–6 years) consume 20 g and 16 g of processed meat per day (95th percentile), respectively. The consumption is primarily accounted for by sausages, salami, pork flank (spiced...

Non-volatile polarization switch of magnetic domain wall velocity

Energy Technology Data Exchange (ETDEWEB)

Huang, Z.; Stolichnov, I.; Setter, N. [Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland); Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L. [University of Grenoble Alpes, Institut Néel, F-38042 Grenoble (France); CNRS, Institut Néel, F-38042 Grenoble (France); Auffret, S.; Gaudin, G. [SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble (France)

2015-12-21

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

Multistate nonvolatile straintronics controlled by a lateral electric field.

Science.gov (United States)

Iurchuk, V; Doudin, B; Kundys, B

2014-07-23

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Privação de sono REM em um modelo experimental da doença de Parkinson

Directory of Open Access Journals (Sweden)

Luiz A. F. Andrade

1987-09-01

Full Text Available Investigação prévia mostrou que ratos privados de sono (REM SD mostram acentuação de resposta a agonistas dopaminérgicos. As evidências indicam que essa ação parece ser mediada por supersensibilização de receptores dopaminérgicos pós-sinápticos. Com base nisso, foi feita REM SD em ratos com modelo experimental da doença de Parkinson, nos quais foi feita lesão eletrolítica bilateral de ambas as vias nigro-estriatais. Sete dias após a cirurgia os animais eram submetidos a REM SD por 72 horas. Imediatamente após o final deste período era feita observação em campo aberto para a ambulação, "rearing", "grooming" e latência. Em comparação com ratos não-privados foi observado aumento significativo na ambulação e "rearing", resposta que reapareceu após um segundo período de REM SD, realizado 21 dias após a cirurgia. Estes dados, de melhora de dois parâmetros de modelo experimental da doença de Parkinson, sugerem que a privação de sono pode ser útil nesta doença.

Nonvolatile two-step, two-color holography with continuous-wave lights for both congruent and near-stoichiometric LiNbO3:Fe

International Nuclear Information System (INIS)

Shen Yan; Zhang Guoquan; Fu Bo; Xu Qingjun; Xu Jingjun

2004-01-01

We have studied theoretically the steady-state nonvolatile two-step, two-color holographic recording performance for both the congruent and the near-stoichiometric LiNbO 3 :Fe based on the two-center model (the deep-trap and the shallow-trap centers are Fe 2+ /Fe 3+ and Nb Li 4+ /Nb Li 5+ , respectively). The results show that the direct electron exchange between the Fe 2+ /Fe 3+ centers and the Nb Li 4+ /Nb Li 5+ centers due to the tunneling effect dominates the charge-transfer process during the nonvolatile two-step, two-color holography and determines the two-step, two-color holography performance in LiNbO 3 :Fe. We have further studied the effects of the crystal stoichiometry on the performance of the two-step, two-color holography. It is shown that, as far as the total space-charge field is considered, the nonvolatile two-step, two-color holography performance in the near-stoichiometric LiNbO 3 :Fe is much better than that in the congruent LiNbO 3 :Fe within the intensity range reachable by the continuous-wave lights

Design of a memory-access controller with 3.71-times-enhanced energy efficiency for Internet-of-Things-oriented nonvolatile microcontroller unit

Science.gov (United States)

Natsui, Masanori; Hanyu, Takahiro

2018-04-01

In realizing a nonvolatile microcontroller unit (MCU) for sensor nodes in Internet-of-Things (IoT) applications, it is important to solve the data-transfer bottleneck between the central processing unit (CPU) and the nonvolatile memory constituting the MCU. As one circuit-oriented approach to solving this problem, we propose a memory access minimization technique for magnetoresistive-random-access-memory (MRAM)-embedded nonvolatile MCUs. In addition to multiplexing and prefetching of memory access, the proposed technique realizes efficient instruction fetch by eliminating redundant memory access while considering the code length of the instruction to be fetched and the transition of the memory address to be accessed. As a result, the performance of the MCU can be improved while relaxing the performance requirement for the embedded MRAM, and compact and low-power implementation can be performed as compared with the conventional cache-based one. Through the evaluation using a system consisting of a general purpose 32-bit CPU and embedded MRAM, it is demonstrated that the proposed technique increases the peak efficiency of the system up to 3.71 times, while a 2.29-fold area reduction is achieved compared with the cache-based one.

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

International Nuclear Information System (INIS)

Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

2014-01-01

Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

Perturbação respiratória durante o sono em doença pulmonar obstrutiva crônica Respiratory disturbance during sleep in chronic obstructive pulmonary disease

Directory of Open Access Journals (Sweden)

Ana C. Krieger

2005-04-01

Full Text Available A doença pulmonar obstrutiva crônica é uma condição freqüente e é hoje a quarta principal causa de mortes nos Estados Unidos. A prevalência de perturbação respiratória durante o sono, ou síndrome de superposição, como anteriormente denominada, ainda não foi determinada devido à publicação de relatos conflitantes. Esta condição deve continuar sendo investigada devido aos efeitos adversos causados por transtornos respiratórios relacionados ao sono em pacientes com doença pulmonar de base. Neste relato, discutiremos brevemente os mecanismos envolvidos na origem da perturbação respiratória durante o sono em doença pulmonar obstrutiva crônica e auxiliaremos o leitor a distinguir àqueles pacientes que se beneficiariam de uma avaliação do padrão do sono mais detalhada, com a discussão de tópicos de gerenciamento e opções de tratamento.Chronic obstructive pulmonary disease is a prevalent condition and is currently the forth leading cause of mortality in the US. The prevalence of respiratory disturbance during sleep, or overlap syndrome as it was commonly known in the past, is still undetermined as conflicting reports have been published. Because of the adverse effects of sleep-related respiratory impairment in patients with underlying pulmonary disease, this condition deserves further investigation. In this report, we will briefly discuss the mechanisms involved in generating respiratory disturbance during sleep in Chronic Obstructive Pulmonary Disease and will guide the reader into distinguishing those patients who would benefit from a more detailed sleep evaluation, discussing management issues and treatment options.

Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

OpenAIRE

Boubekeur, Hocine

2004-01-01

n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high dielectric constant films for use in Giga-bit scale memories or layered perovskite films for use in non-volatile memories involve materials to semiconductor process flows, which entail a high risk of contamination. The introdu...

Horas de sono e índice de massa corporal em pré-escolares do sul do Brasil Sleep duration and body mass index among southern Brazilian preschoolers

Directory of Open Access Journals (Sweden)

Maria Laura da Costa Louzada

2012-12-01

Full Text Available A prevenção e o tratamento do excesso de peso são particularmente complexos, reforçando a importância de estudos que visem esclarecer sua rede de causas e efeitos. Assim, o objetivo desse estudo foi avaliar a relação entre horas de sono noturnas e medidas antropométricas. Realizou-se uma análise transversal realizada a partir de dados de 348 crianças de 3 e 4 anos da cidade de São Leopoldo/ RS. As horas de sono noturnas foram relatadas pelas mães e as medidas de índice de massa corporal, circunferência da cintura e dobras cutâneas foram medidas de acordo com protocolo padrão. As análises foram ajustadas para consumo energético e horas de televisão assistidas. As crianças com excesso de peso apresentaram, em média, 0,39 horas a menos de sono em relação àquelas com peso adequado (9,77 ± 1,44 versus 10,17 ± 1,34; IC95% 0,03-0,76. Observou-se associação inversa entre horas de sono noturnas e valores de escore z de índice de massa corporal para idade (B = -0,12 IC95% -0,22--0,02. A circunferência da cintura e as dobras cutâneas apresentaram relação inversa com as horas de sono, porém sem diferença estatística. Em pré-escolares do sul do Brasil, menos horas de sono noturnas foram associadas com maiores valores de índice de massa corporal.Prevention and treatment of overweight are particularly complex, reinforcing the importance of studies aimed at clarifying their range of causes and effects. Thus, the objective of this study was to evaluate the relationship between night sleep duration and anthropometric measurements. A cross-sectional analysis was performed from data from 348 children aged 3 and 4 years in São Leopoldo/RS. Night sleep duration was reported by their mothers and body mass index, waist circumference and skinfold thickness were measured according to standard protocol. The analyses were adjusted for energy intake and hours of television watching. Overweight children had, on average, 0.39 hours less

Carbon nanotube network-silicon oxide non-volatile switches.

Science.gov (United States)

Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

2014-12-08

The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

Transport property of novel sono-catalysed LiCF sub 3 SO sub 3 doped SiO sub 2 -PEG ormolyte

CERN Document Server

Jung, H Y; Wi, C J; Whang, C M

2003-01-01

Transport property of a novel sono-catalysed LiCF sub 3 SO sub 3 doped SiO sub 2 -10 wt% PEG ormolyte is reported. The ormolyte was synthesized by sol-gel method by varying the LiCF sub 3 SO sub 3 concentration [Li/O] from 0 to 0.1 in mole. The composition with [Li/O] = 0.05 exhibited the highest conductivity (sigma sub 2 sub 5 sub d eg sub C = 2.4x10 sup - sup 4 S cm sup - sup 1) with an enhancement of 10 sup 3 from that of the host matrix: SiO sub 2 -10 wt% PEG sono gel and has been referred to as 'optimum conducting composition (OCC)'. The direct determination of Li sup + ion mobility (mu)/mobile ion concentration (n) indicated that the enhancement was due to the increase in mu and n both. The temperature dependence of sigma, mu and n were carried out for the OCC samples in order to evaluate the respective energies involved in different thermally activated processes and to understand the ion transport mechanism. The ion transference number (t sub i sub o sub n) measurement inferred the ions as the sole cha...

Coexistência de transtornos respiratórios do sono e síndrome fibromiálgica Sleep disordered breathing concomitant with fibromyalgia syndrome

Directory of Open Access Journals (Sweden)

Dienaro Germanowicz

2006-08-01

Full Text Available OBJETIVO: Identificar síndrome fibromiálgica em pacientes com transtornos respiratórios do sono. MÉTODOS: Foram estudados 50 pacientes que compareceram à Clínica do Sono com queixas de roncar no sono, apnéias e sonolência diurna. Confirmou-se o diagnóstico de transtornos respiratórios do sono através de polissonografia. Para se estabelecer o diagnóstico de síndrome fibromiálgica, submeteram-se os pacientes a avaliação de acordo com os critérios estabelecidos pelo American College of Rheumatology. RESULTADOS: Estudaram-se 50 pacientes, 32 do sexo masculino. A média (± desvio-padrão de idade do grupo foi de 50 ± 12 anos. A média do índice de massa corporal do grupo foi de 29,7 ± 5,6 kg/m². A média do índice de apnéias e hipopnéias do grupo foi de 36 ± 29 apnéias e hipopnéias /hora. Nove das 18 mulheres e 2 homens preencheram os critérios estabelecidos pelo American College of Rheumatology para o diagnóstico de síndrome fibromiálgica. CONCLUSÃO: Considerando-se que a prevalência de síndrome fibromiálgica na população geral é de 0,5% para homens e de 3,4% para mulheres, a fração de casos de fibromialgia mais de dez vezes maior nesta amostra reforça a hipótese de associação entre transtornos respiratórios do sono e síndrome fibromiálgica.OBJECTIVE: To identify fibromyalgia syndrome in patients with sleep disordered breathing. METHOD: We studied 50 patients seeking treatment at a sleep disorder clinic for snoring, apnea and excessive daytime sleepiness. Sleep disordered breathing was diagnosed through the use of polysomnography. To diagnose fibromyalgia syndrome, patients were evaluated in accordance with the criteria established by the American College of Rheumatology. RESULTS: Of the 50 patients, 32 were male. The mean (± standard deviation age of the group was 50 ± 12 years. The mean body mass index was 29.7 ± 5.6 kg/m². The mean apnea-hypopnea index was 36 ± 29 attacks of apnea or hypopnea

Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

National Research Council Canada - National Science Library

Ahn, Charles H

2006-01-01

The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

Multistate nonvolatile straintronics controlled by a lateral electric field

International Nuclear Information System (INIS)

Iurchuk, V; Doudin, B; Kundys, B

2014-01-01

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications. (fast track communication)

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Zhang, Li, E-mail: lizhang9@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Li, Ye; Shi, Jun [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Shi, Gaoquan [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Cao, Shaokui, E-mail: Caoshaokui@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

2013-11-01

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10{sup 5}. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states.

Interlaboratory study of a method for determining nonvolatile organic carbon in aquifer materials

Science.gov (United States)

Caughey, M.E.; Barcelona, M.J.; Powell, R.M.; Cahill, R.A.; Gron, C.; Lawrenz, D.; Meschi, P.L.

1995-01-01

The organic carbon fraction in aquifer materials exerts a major influence on the subsurface mobilities of organic and organic-associated contaminants. The spatial distribution of total organic carbon (TOC) in aquifer materials must be determined before the transport of hydrophobic organic pollutants in aquifers can be modeled accurately. Previous interlaboratory studies showed that it is difficult to measure TOC concentrations 1%. We have tested a new analytical method designed to improve the accuracy and precision of nonvolatile TOC quantitation in geologic materials that also contain carbonate minerals. Four authentic aquifer materials and one NIST standard reference material were selected as test materials for a blind collaborative study. Nonvolatile TOC in these materials ranged from 0.05 to 1.4%, while TIC ranged from 0.46 to 12.6%. Sample replicates were digested with sulfurous acid, dried at 40??C, and then combusted at 950??C using LECO or UIC instruments. For the three test materials that contained >2% TIC, incomplete acidification resulted in a systematic positive bias of TOC values reported by five of the six laboratories that used the test method. Participants did not have enough time to become proficient with the new method before they analyzed the test materials. A seventh laboratory successfully used an alternative method that analyzed separate liquid and solid fractions of the acidified sample residues. ?? 1995 Springer-Verlag.

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

International Nuclear Information System (INIS)

Zhang, Li; Li, Ye; Shi, Jun; Shi, Gaoquan; Cao, Shaokui

2013-01-01

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10 5 . Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Amorphous Semiconductors: From Photocatalyst to Computer Memory

Science.gov (United States)

Sundararajan, Mayur

encouraging but inconclusive. Then the method was successfully demonstrated on mesoporous TiO2SiO 2 by showing a shift in its optical bandgap. One of the special class of amorphous semiconductors is chalcogenide glasses, which exhibit high ionic conductivity even at room temperature. When metal doped chalcogenide glasses are under an electric field, they become electronically conductive. These properties are exploited in the computer memory storage application of Conductive Bridging Random Access Memory (CBRAM). CBRAM is a non-volatile memory that is a strong contender to replace conventional volatile RAMs such as DRAM, SRAM, etc. This technology has already been commercialized, but the working mechanism is still not clearly understood especially the nature of the conductive bridge filament. In this project, the CBRAM memory cells are fabricated by thermal evaporation method with Agx(GeSe 2)1-x as the solid electrolyte layer, Ag as the active electrode and Au as the inert electrode. By careful use of cyclic voltammetry, the conductive filaments were grown on the surface and the bulk of the solid electrolyte. The comparison between the two filaments revealed major differences leading to contradiction with the existing working mechanism. After compiling all the results, a modified working mechanism is proposed. SAXS is a powerful tool to characterize nanostructure of glasses. The analysis of the SAXS data to get useful information are usually performed by different programs. In this project, Irena and GIFT programs were compared by performing the analysis of the SAXS data of glass and glass ceramics samples. Irena was shown to be not suitable for the analysis of SAXS data that has a significant contribution from interparticle interactions. GIFT was demonstrated to be better suited for such analysis. Additionally, the results obtained by programs for samples with low interparticle interactions were shown to be consistent.

Volatile and non-volatile compounds in green tea affected in harvesting time and their correlation to consumer preference.

Science.gov (United States)

Kim, Youngmok; Lee, Kwang-Geun; Kim, Mina K

2016-10-01

Current study was designed to find out how tea harvesting time affects the volatile and non-volatile compounds profiles of green tea. In addition, correlation of instrumental volatile and non-volatile compounds analyses to consumer perception were analyzed. Overall, earlier harvested green tea had stronger antioxidant capacity (~61.0%) due to the polyphenolic compounds from catechin (23,164 mg/L), in comparison to later harvested green teas (11,961 mg/L). However, high catechin content in green tea influenced negatively the consumer likings of green tea, due to high bitterness (27.6%) and astringency (13.4%). Volatile compounds drive consumer liking of green tea products were also identified, that included linalool, 2,3-methyl butanal, 2-heptanone, (E,E)-3,5-Octadien-2-one. Finding from current study are useful for green tea industry as it provide the difference in physiochemical properties of green tea harvested at different intervals.

Effects of biodiesel, engine load and diesel particulate filter on nonvolatile particle number size distributions in heavy-duty diesel engine exhaust

International Nuclear Information System (INIS)

Young, Li-Hao; Liou, Yi-Jyun; Cheng, Man-Ting; Lu, Jau-Huai; Yang, Hsi-Hsien; Tsai, Ying I.; Wang, Lin-Chi; Chen, Chung-Bang; Lai, Jim-Shoung

2012-01-01

Highlights: ► The effects of waste cooking oil biodiesel, engine load and DOC + DPF on nonvolatile particle size distributions in HDDE exhaust. ► Increasing biodiesel blends cause slight decreases in the total particle number concentrations and negligible changes in size distributions. ► Increasing load results in modest increases in both the total particle number concentrations and sizes. ► The effects of semivolatile materials are strongest at idle, during which nonvolatile cores TOT ) decrease slightly, while the mode diameters show negligible changes with increasing biodiesel blends. For a given biodiesel blend, both the N TOT and mode diameters increase modestly with increasing load of above 25%. The N TOT at idle are highest and their size distributions are strongly affected by condensation and possible nucleation of semivolatile materials. Nonvolatile cores of diameters less than 16 nm are only observed at idle mode. The DOC + DPF shows remarkable filtration efficiency for both the core and soot particles, irrespective of the biodiesel blend and engine load under study. The N TOT post the DOC + DPF are comparable to typical ambient levels of ∼10 4 cm −3 . This implies that, without concurrent reductions of semivolatile materials, the formation of semivolatile nucleation mode particles post the aftertreatment is highly favored.

Intrinsic nanofilamentation in resistive switching

KAUST Repository

Wu, Xing; Cha, Dong Kyu; Bosman, Michel; Raghavan, Nagarajan; Migas, Dmitri B.; Borisenko, Victor E.; Zhang, Xixiang; Li, Kun; Pey, Kin-Leong

2013-01-01

-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Silicon integrated circuits part A : supplement 2

CERN Document Server

Kahng, Dawon

1981-01-01

Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

International Nuclear Information System (INIS)

Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

2014-01-01

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

Energy Technology Data Exchange (ETDEWEB)

Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

2014-01-06

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Morbilidade psicológica, qualidade do sono, e suporte social nos portadores de diabetes mellitus tipo 2

OpenAIRE

Costa, Elisabete Miranda Gomes

2013-01-01

Para levar a cabo este estudo foram aplicados além de um Questionário Sócio – Demográfico, (adaptada da versão de Sousa & McIntyre , 2002) para caracterização da amostra; a Escala Hospitalar de Ansiedade Depressão (HADS), (Zigmond & Snaith, 1983;versão portuguesa adaptada por Pais-Ribeiro, Silva, Ferreira, Martins, Meneses & Baltar,2007) para avaliar os índices de ansiedade e depressão; Índice de Qualidade do Sono Pittsburgh (PSQI) (Buysse, Reynolds, Monk, Berman & Kupfer, 1989; versão portug...

Fonoaudiologia e apneia do sono: uma revisão Speech therapy and sleepy apnae: a review

Directory of Open Access Journals (Sweden)

Erilucia Pereira Santa Rosa

2010-10-01

Full Text Available TEMA: a Síndrome da Apneia/Hipopneia Obstrutiva do Sono (SAHOS é definida pela Academia Americana do Sono como a presença de episódios recorrentes de obstrução parcial ou total das vias aéreas superiores durante o sono e manifesta-se como uma redução (hipopneia ou cessação completa (apneia do fluxo aéreo, apesar da manutenção dos esforços inspiratórios. A SAHOS motiva o chamado ronco crônico, sonolência e caracteriza-se pela parada do fluxo aéreo respiratório por pelo menos, 10 segundos. O diagnóstico é realizado através do exame polissonográfico, que consiste no registro simultâneo de atividades do organismo durante a noite, indicando a quantidade de apneias e hipopneias ocorridos e a gravidade da SAHOS. Para sucesso no tratamento desta desordem é fundamental o diagnóstico preciso e correto e a atuação de uma equipe multidisciplinar, estando inserido nela o fonoaudiólogo. OBJETIVO: analisar, através da literatura a interrrelação da Fonoaudiologia e a SAHOS. CONCLUSÃO: aom o referente estudo, podemos identificar a complexidade da SAHOS e mostrar a importância da atuação fonoaudiológica na terapêutica desses pacientes, para uma melhor qualidade de vida.BACKGROUND: the Apnea syndrome / Obstructive Sleepy Hypopnea (SOHAS is define by the American Academy of Sleep with recurrent presence of episodes of partial or total obstruction in the superior airways during sleep, in addition to showing a reduction (hypopnea or complete stoppage (apnea of airflow, although there is an ongoing maintenance of inspiratory efforts. SOHAS motivates the so-called sleepy chronic snoring and sleepiness to dress up by the stop of airflow by at least 10 seconds. The diagnosis is carried out through polysomnographic examination, which consists of the simultaneous recording of body activities during the night, indicating the number of occurring apneas and hypopneas and SOHAS severity. For the successful of disorder treatment it is

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

Organic nonvolatile memory devices with charge trapping multilayer graphene film

International Nuclear Information System (INIS)

Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

2012-01-01

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Investigation of non-volatile additives on the process of distillation of hydrocarbon mixtures

Directory of Open Access Journals (Sweden)

М.Б. Степанов

2009-02-01

Full Text Available  The given results of researches of influence of nonvolatile additives on processes of distillation of individual hydrocarbons and their mixes, including petroleum and mineral oil. With the help of the developed computer system of the continuous control of distillation it is shown, that at the presence of small amounts of the additive decrease of temperature of the beginning of boiling of hydrocarbons is observed, their speeds of banish and exits of light fuel mineral oil grow during initial oil refining

Estudo cárdio-respiratório do sono domiciliário em crianças. Será exequível?

Directory of Open Access Journals (Sweden)

Adelina Amorim

2004-11-01

Full Text Available RESUMO: A síndroma de apneia obstrutiva do sono é comum em crianças, podendo associar-se a graves complicações. A polissonografia nocturna mantém-se como gold standard no diagnóstico desta patologia. Dada a escassez de laboratórios do sono, nomeadamente com “perfil pediátrico”, têm-se vindo a usar outras técnicas de screening.O objectivo deste trabalho foi estudar a rentabilidade dos estudos cárdio-respiratórios do sono domiciliários realizados em crianças.Desde Janeiro de 1999 a Junho de 2003 foram realizados 33 estudos cardio-respiratórios do sono domiciliários em crianças.Foram estudadas 31, com uma média de idades de 10,6+/-3,4 anos, sendo 21 do sexo masculino. Em 5 doentes existiam malformações cránio-faciais, em 2 doenças neuromusculares e 10 crianças eram obesas. Os sinais de fluxo nasal e de saturação do oxigénio foram bons/razoáveis em 67,7% e 96,8% doentes, respectivamente. Apenas em 2 casos o registo foi nulo.O valor médio do índice de apneia-hipopneia foi de 10,7+/-12,3/hora, a saturação média de oxigénio de 95,6%+/-3,0 %, a saturação mínima de 82,2 %+/ /-9,2% e o índice de dessaturação de 12,5+/-10,7/ /hora. A síndroma de apneia obstrutiva do sono foi confirmada/sugestiva em 30 (91% doentes. O índice de apneia-hipopneia e o índice de dessaturação foi mais elevado no grupo de crianças commalformações cránio-faciais e doenças neuromusculares comparativamente com as crianças obesas (26,3 vs 10,5 e 21,5 vs 11,3, respectivamente mas sem significado estatístico.Na nossa experiência, o estudo cárdio-respiratório do sono domiciliário tem-se revelado um método de diagnóstico facilmente aplicável nas crianças. Ao fornecer mais informações objectivas do que outras técnicas de screening, poderá certamente avaliar com mais segurança a exist

Green method for ultrasensitive determination of Hg in natural waters by electrothermal-atomic absorption spectrometry following sono-induced cold vapor generation and 'in-atomizer trapping'

International Nuclear Information System (INIS)

Gil, Sandra; Lavilla, Isela; Bendicho, Carlos

2007-01-01

Sono-induced cold vapor generation (SI-CVG) has been used for the first time in combination with a graphite furnace atomizer for determination of Hg in natural waters by electrothermal-atomic absorption spectrometry after in situ trapping onto a noble metal-pretreated platform (Pd, Pt or Rh) inserted into a graphite tube. The system allows 'in-atomizer trapping' of Hg without the use of conventional reduction reactions based on sodium borohydride or tin chloride in acid medium for cold vapor generation. The sono-induced reaction is accomplished by applying ultrasound irradiation to the sample solution containing Hg(II) in the presence of an organic compound such as formic acid. As this organic acid is partly degraded upon ultrasound irradiation to yield CO, CO 2 , H 2 and H 2 O, the amount of lab wastes is minimized and a green methodology is achieved. For this purpose, experimental variables influencing the generation/trapping process are fully investigated. The limit of detection for a 10 min trapping time and 10 mL sample volume was 0.03 μg L -1 (Integrated absorbance) and the repeatability expressed as relative standard deviation was about 3%. Carbonates and chlorides at 100 mg L -1 level caused a signal depression by 20-30%. The enhanced trapping efficiency observed with the sono-induced cold vapor generation as compared with 'in-atomizer trapping' methods employing chemical vapor generation is discussed. A reaction pathway for SI-CVG is proposed on the basis of the current knowledge for synthesis of noble metal nanoparticles by ultrasound

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

OpenAIRE

Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Pontas positivas occipitais transitórias no eletrencefalograma de pacientes epilépticos submetidos a privação do sono Sleep occipital positive transient spikes seen at EEG of epileptic patients submitted to sleep deprivation

Directory of Open Access Journals (Sweden)

Gilson Edmar Gonçalves e Silva

2007-06-01

Full Text Available OBJETIVO: Comparar o aparecimento do grafoelemento de ponta positiva occipital transitória do sono em eletrencefalograma (EEG de pacientes epilépticos com e sem privação do sono, como método de ativação. MÉTODO: Foram analisados 40 EEG de 20 pacientes epilépticos com idade variando de 12 a 43 anos sendo 60% do sexo masculino, atendidos no Hospital das Clínicas da Universidade Federal de Pernambuco, no período de 1995 a 2000. Foram incluídos pacientes com epilepsia diagnosticada clinicamente e EEG sem alteração. Cada paciente foi submetido a um EEG sem privação de sono e outro após 36 horas de privação. O registro dos dois EEG foi separado por intervalo de 48 horas, obedecendo ao protocolo padrão. O efeito da privação do sono foi avaliado pelo aparecimento do grafoelemento PPOTS durante o estágio NREM do sono. RESULTADOS: No EEG sem privação do sono, a PPOTS foi identificada em 6 (30% pacientes no estágio I e em 1 (5% paciente em ambos os estágios I e II NREM. Após privação do sono, PPOTS estiveram ausentes em apenas um paciente, mas presentes em 25% casos no estágio I NREM e em 70%, nos estágios I e II NREM. CONCLUSÃO: O aumento da freqüência de PPOTS após privação do sono, parece indicar a existência da liberação de neurotransmissores excitatórios, o que pode contribuir significativamente para a investigação da excitabilidade cerebral.OBJECTIVE: To compare the presence of "sleep occipital positive transient spikes" (SOPTS in the electroencephalogram (EEG of epileptic patients without sleep deprivation (SD to those with SD, as an activation method. METHOD: The author analyzed 40 EEG of 20 epileptic patients, aging from 12 to 43 years, 60%, males. Those patients were attempted at the Clinics Hospital of Universidade Federal de Pernambuco, from 1995 to 2000. Every patient included in this study had epilepsy clinically diagnosed and all EEG without abnormalities. Each subject was submitted to one EEG

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Pediatras e os distúrbios respiratórios do sono na criança Pediatricians and sleep-disordered breathing in the child

Directory of Open Access Journals (Sweden)

Aracy Pereira Silveira Balbani

2005-04-01

Full Text Available OBJETIVOS: pesquisar as opiniões e condutas de pediatras frente aos distúrbios respiratórios do sono (DRS em crianças. MÉTODOS: Foram selecionados aleatoriamente 516 pediatras do Estado de São Paulo. Foi enviado aos pediatras, por correio, um formulário de questões sobre: perfil profissional, seu conhecimento do DRS na criança, opiniões e condutas para diagnóstico e tratamento dessa doença. RESULTADOS: Retornaram preenchidos 112 questionários anônimos (21,7%. O ensino de DRS na infância durante a graduação e a residência médica em Pediatria foi considerado insatisfatório, respectivamente, por 65,2% e 34,8% dos pediatras. Quarenta e nove pediatras (43,8% avaliaram seu conhecimento de DRS na criança como regular, 39 (34,8% como bom e 17 (15,2% como insatisfatório. As questões de anamnese do sono consideradas mais importantes foram: respiração bucal, pausas respiratórias, número de horas de sono, sonolência diurna excessiva e chiado noturno. Os dados clínicos considerados mais importantes para a suspeita de síndrome da apnéia obstrutiva do sono (SAOS foram: pausas respiratórias, hipertrofia da adenóide, respiração bucal, presença de anomalia craniofacial e ronco. As principais condutas citadas para diagnóstico de SAOS na criança foram: radiografia do cavum e avaliação com otorrinolaringologista (25% e oximetria de pulso noturna (14,2%. Somente 11,6% dos pediatras indicaram a polissonografia de noite inteira e 4,5%, a polissonografia breve diurna. As condutas consideradas mais eficazes para tratamento de DRS foram: cirurgias de adenoidectomia e adenotonsilectomia, orientação aos pais, perda de peso e higiene do sono. CONCLUSÕES: Há um descompasso entre as pesquisas sobre DRS na infância e sua abordagem na prática pediátrica.OBJECTIVES: assessment of opinions and practices of pediatricians concerning sleep-disordered breathing (SDB in children. METHODS: randomly 516 pediatricians were selected in the

Effects of biodiesel, engine load and diesel particulate filter on nonvolatile particle number size distributions in heavy-duty diesel engine exhaust

Energy Technology Data Exchange (ETDEWEB)

Young, Li-Hao, E-mail: lhy@mail.cmu.edu.tw [Department of Occupational Safety and Health, China Medical University, 91, Hsueh-Shih Road, Taichung 40402, Taiwan (China); Liou, Yi-Jyun [Department of Occupational Safety and Health, China Medical University, 91, Hsueh-Shih Road, Taichung 40402, Taiwan (China); Cheng, Man-Ting [Department of Environmental Engineering, National Chung Hsing University, 250, Kuo-Kuang Road, Taichung 40254, Taiwan (China); Lu, Jau-Huai [Department of Mechanical Engineering, National Chung Hsing University, 250, Kuo-Kuang Road, Taichung 40254, Taiwan (China); Yang, Hsi-Hsien [Department of Environmental Engineering and Management, Chaoyang University of Technology, 168, Jifeng E. Road, Taichung 41349, Taiwan (China); Tsai, Ying I. [Department of Environmental Engineering and Science, Chia Nan University of Pharmacy and Science, 60, Sec. 1, Erh-Jen Road, Tainan 71710, Taiwan (China); Wang, Lin-Chi [Department of Chemical and Materials Engineering, Cheng Shiu University, 840, Chengcing Road, Kaohsiung 83347, Taiwan (China); Chen, Chung-Bang [Fuel Quality and Engine Performance Research, Refining and Manufacturing Research Institute, Chinese Petroleum Corporation, 217, Minsheng S. Road, Chiayi 60036, Taiwan (China); Lai, Jim-Shoung [Department of Occupational Safety and Health, China Medical University, 91, Hsueh-Shih Road, Taichung 40402, Taiwan (China)

2012-01-15

Highlights: Black-Right-Pointing-Pointer The effects of waste cooking oil biodiesel, engine load and DOC + DPF on nonvolatile particle size distributions in HDDE exhaust. Black-Right-Pointing-Pointer Increasing biodiesel blends cause slight decreases in the total particle number concentrations and negligible changes in size distributions. Black-Right-Pointing-Pointer Increasing load results in modest increases in both the total particle number concentrations and sizes. Black-Right-Pointing-Pointer The effects of semivolatile materials are strongest at idle, during which nonvolatile cores <16 nm were observed. Black-Right-Pointing-Pointer The DOC + DPF shows remarkable filtration efficiency for both the core and soot particles, irrespective of biodiesel blend and load. - Abstract: Diesel engine exhaust contains large numbers of submicrometer particles that degrade air quality and human health. This study examines the number emission characteristics of 10-1000 nm nonvolatile particles from a heavy-duty diesel engine, operating with various waste cooking oil biodiesel blends (B2, B10 and B20), engine loads (0%, 25%, 50% and 75%) and a diesel oxidation catalyst plus diesel particulate filter (DOC + DPF) under steady modes. For a given load, the total particle number concentrations (N{sub TOT}) decrease slightly, while the mode diameters show negligible changes with increasing biodiesel blends. For a given biodiesel blend, both the N{sub TOT} and mode diameters increase modestly with increasing load of above 25%. The N{sub TOT} at idle are highest and their size distributions are strongly affected by condensation and possible nucleation of semivolatile materials. Nonvolatile cores of diameters less than 16 nm are only observed at idle mode. The DOC + DPF shows remarkable filtration efficiency for both the core and soot particles, irrespective of the biodiesel blend and engine load under study. The N{sub TOT} post the DOC + DPF are comparable to typical ambient levels of

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Colossal X-Ray-Induced Persistent Photoconductivity in Current-Perpendicular-to-Plane Ferroelectric/Semiconductor Junctions

KAUST Repository

Hu, Weijin

2017-12-07

Persistent photoconductivity (PPC) is an intriguing physical phenomenon, where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO3/Sm0.1Bi0.9FeO3/Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-ray-induced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

High-performance solution-processed polymer ferroelectric field-effect transistors

NARCIS (Netherlands)

Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Self-assembling peptide semiconductors

Science.gov (United States)

Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

2017-01-01

Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

1 Gb Radiation Hardened Nonvolatile Memory Development, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The objective of this effort is to identify, characterize and develop advanced semiconductor materials and fabrication process techniques, and design and produce a...

Semiconductors for plasmonics and metamaterials

DEFF Research Database (Denmark)

Naik, G.V.; Boltasseva, Alexandra

2010-01-01

Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Oxide semiconductors

CERN Document Server

Svensson, Bengt G; Jagadish, Chennupati

2013-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

Semiconductor statistics

CERN Document Server

Blakemore, J S

1962-01-01

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1992-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

Nonlinear Elasticity of Doped Semiconductors

Science.gov (United States)

2017-02-01

AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Apple juice composition: sugar, nonvolatile acid, and phenolic profiles.

Science.gov (United States)

Lee, H S; Wrolstad, R E

1988-01-01

Apples from Michigan, Washington, Argentina, Mexico, and New Zealand were processed into juice; the 8 samples included Golden Delicious, Jonathan, Granny Smith, and McIntosh varieties. Liquid chromatography was used for quantitation of sugars (glucose, fructose, sucrose, and sorbitol), nonvolatile acids (malic, quinic, citric, shikimic, and fumaric), and phenolics (chlorogenic acid and hydroxymethylfurfural [HMF]). Other determinations included pH, 0Brix, and L-malic acid. A number of compositional indices for these authentic juices, e.g., chlorogenic acid content, total malic - L-malic difference, and the HMF:chlorogenic ratio, were at variance with recommended standards. The phenolic profile was shown to be particularly influenced by gelatin fining, with peak areas decreasing by as much as 50%. The L-malic:total malic ratio serves as a better index for presence of synthetic malic acid than does the difference between the 2 determinations. No apparent differences in chemical composition could be attributed to geographic origin.

Analysis of Non-Volatile Chemical Constituents of Menthae Haplocalycis Herba by Ultra-High Performance Liquid Chromatography-High Resolution Mass Spectrometry

Directory of Open Access Journals (Sweden)

Lu-Lu Xu

2017-10-01

Full Text Available Menthae Haplocalycis herba, one kind of Chinese edible herbs, has been widely utilized for the clinical use in China for thousands of years. Over the last decades, studies on chemical constituents of Menthae Haplocalycis herba have been widely performed. However, less attention has been paid to non-volatile components which are also responsible for its medical efficacy than the volatile constituents. Therefore, a rapid and sensitive method was developed for the comprehensive identification of the non-volatile constituents in Menthae Haplocalycis herba using ultra-high performance liquid chromatography coupled with linear ion trap-Orbitrap mass spectrometry (UHPLC-LTQ-Orbitrap. Separation was performed with Acquity UPLC® BEH C18 column (2.1 mm × 100 mm, 1.7 μm with 0.2% formic acid aqueous solution and acetonitrile as the mobile phase under gradient conditions. Based on the accurate mass measurement (<5 ppm, MS/MS fragmentation patterns and different chromatographic behaviors, a total of 64 compounds were unambiguously or tentatively characterized, including 30 flavonoids, 20 phenolic acids, 12 terpenoids and two phenylpropanoids. Finally, target isolation of three compounds named Acacetin, Rosmarinic acid and Clemastanin A (first isolated from Menthae Haplocalycis herba were performed based on the obtained results, which further confirmed the deduction of fragmentation patterns and identified the compounds profile in Menthae Haplocalycis herba. Our research firstly systematically elucidated the non-volatile components of Menthae Haplocalycis herba, which laid the foundation for further pharmacological and metabolic studies. Meanwhile, our established method was useful and efficient to screen and identify targeted constituents from traditional Chinese medicine extracts.

Sleep disturbances in 50 children with attention-deficit hyperactivity disorder Distúrbios do sono em 50 crianças com transtorno do déficit de atenção e hiperatividade

Directory of Open Access Journals (Sweden)

Sergio Nolasco Hora das Neves

2007-06-01

Full Text Available OBJECTIVE: This study assesses the relationship between sleep disturbances (SD and attention-deficit and hyperactivity disorder (ADHD to characterize clinical features and associated problems. METHOD: The medical records of 50 children and adolescents ranging in age from 4 to 17 years with ADHD without the diagnosis of mental retardation or pervasive developmental disorders were reviewed. RESULTS: Significant relationships were found between SD and drug therapy (pOBJETIVO: Avaliar a associação entre transtorno do déficit de atenção e hiperatividade (TDAH e distúrbios do sono para caracterizar fatores clínicos e problemas associados. MÉTODO: Foram revistos prontuários de 50 crianças e adolescentes com idade entre 4 e 17 anos e consecutivo diagnóstico de TDAH sem diagnóstico de retardo mental ou transtornos invasivos do desenvolvimento. RESULTADOS: Foram encontradas associações significativas entre alterações do sono e farmacoterapia (p<0,01, comorbidade (p<0,01 e maior aderência ao tratamento prescrito para sintomas de TDAH (p<0,05. CONCLUSÃO: Os resultados deste estudo sugerem que alterações do sono são relevantes em crianças com TDAH e podem estar associadas a aumento dos sintomas.

Semiconductor radiation detection systems

CERN Document Server

2010-01-01

Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

Sono, estado nutricional e hábitos de vida de caminhoneiros = Sleep, nutritional status and life habits of truckers

Directory of Open Access Journals (Sweden)

Paris, Patrícia de

2013-01-01

Full Text Available Objetivo: Avaliar o período de sono, o estado nutricional e os hábitos de vida dos caminhoneiros do município de Veranópolis/RS. Materiais e Métodos: Estudo retrospectivo, transversal com dados secundários de uma amostra de conveniência de 100 caminhoneiros entre 21 e 60 anos. Estudou-se variáveis sociodemográficas, de hábitos de vida, relato de doença crônica não transmissível (DCNT, uso de medicamentos para dormir ou para tratamento de saúde, questões sobre as práticas alimentares e parâmetros antropométricos. Os dados foram analisados por estatística descritiva e analítica pelo programa SPSS® com nível de significância de 5%. Resultados: A idade média dos caminhoneiros foi 38,5±10,2 anos. A maioria dorme 6,0±1,4 horas/dia, apresenta-se com sobrepeso e obesidade (82% e risco para o desenvolvimento de doenças cardiovasculares (69%. O tempo de sono teve associação com o colesterol total e o diabete mellitus. A média de refeições realizadas por dia foi de 3,4±0,9, prevalecendo o café da manhã, o almoço e o jantar. Caminhoneiros que dormem a semana inteira em casa realizam o café da manhã, o almoço e o jantar em suas residências, enquanto aqueles que dormem de 1 a 5 dias fora de casa realizam o almoço e o jantar em restaurantes. Houve associação significativa da faixa etária (p=0,044, consumo de bebidas alcoólicas (p=0,020 e realização de lanche da tarde (p=0,013 com dormir após o almoço; e dos obesos com a presença de hipertensão (p=0,035. Conclusão: O sobrepeso e a obesidade caracterizaram o estado nutricional dos caminhoneiros. O sono associou-se com as DCNT. A maioria realiza três refeições diárias, não pratica exercícios físicos e não é tabagista, porém, tem o hábito de ingerir bebidas alcoólicas

Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments

International Nuclear Information System (INIS)

Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Wei-Ren; Lo, Yuan-Chun; Wu, Kai-Ting; Sze, S.M.; Chen, Jason; Liao, I.H.; Yeh, Fon-Shan

2010-01-01

In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation.

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1995-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

Volatiles and Nonvolatiles in Flourensia campestris Griseb. (Asteraceae), How Much Do Capitate Glandular Trichomes Matter?

Science.gov (United States)

Piazza, Leonardo A; López, Daniela; Silva, Mariana P; López Rivilli, Marisa J; Tourn, Mónica G; Cantero, Juan J; Scopel, Ana L

2018-03-01

The distribution and ultrastructure of capitate glandular trichomes (GTs) in Flourensia species (Asteraceae) have been recently elucidated, but their metabolic activity and potential biological function remain unexplored. Selective nonvolatile metabolites from isolated GTs were strikingly similar to those found on leaf surfaces. The phytotoxic allelochemical sesquiterpene (-)-hamanasic acid A ((-)-HAA) was the major constituent (ca. 40%) in GTs. Although GTs are quaternary ammonium compounds (QACs)-accumulating species, glycine betaine was not found in GTs; it was only present in the leaf mesophyll. Two (-)-HAA accompanying surface secreted products: compounds 4-hydroxyacetophenone (piceol; 1) and 2-hydroxy-5-methoxyacetophenone (2), which were isolated and fully characterized (GC/MS, NMR), were present in the volatiles found in GTs. The essential oils of fresh leaves revealed ca. 33% monoterpenes, 26% hydrocarbon- and 30% oxygenated sesquiterpenes, most of them related to cadinene and bisabolene derivatives. Present results suggest a main role of GTs in determining the volatile and nonvolatile composition of F. campestris leaves. Based on the known activities of the compounds identified, it can be suggested that GTs in F. campestris would play key ecological functions in plant-pathogen and plant-plant interactions. In addition, the strikingly high contribution of compounds derived from cadinene and bisabolene pathways, highlights the potential of this species as a source of high-valued bioproducts. © 2018 Wiley-VHCA AG, Zurich, Switzerland.

II-VI semiconductor compounds

CERN Document Server

1993-01-01

For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

Science.gov (United States)

Jeong, Doo Seok; Hwang, Cheol Seong

2018-04-18

Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Stretchable Non-volatile Nylon Thread Memory

Science.gov (United States)

Kang, Ting-Kuo

2016-04-01

Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

[Studies on the degradation of paracetamol in sono-electrochemical oxidation].

Science.gov (United States)

Dai, Qi-Zhou; Ma, Wen-Jiao; Shen, Hong; Chen, Jun; Chen, Jian-Meng

2012-07-01

A novel lead dioxide electrodes co-doped with rare earth and polytetrafluoroethylene (PTFE) were prepared by the electrode position method and applied as anodes in sono-electrochemical oxidation for pharmaceutical wastewater degradation. The results showed that the APAP removal and the mineralization efficiency reached an obvious increase, which meant that the catalytic efficiency showed a significant improvement in the use of rare-earth doped electrode. The effects of process factors showed that the condition of the electrode had the best degradation efficiency with doped with Ce2O3 under electrolyte concentration of 14.2 g x L(-1), 49.58 W x cm(-2), 50 Hz, pH = 3, 71.43 mA x cm(-2). The APAP of 500 mg x L(-1) removal rate reached 92.20% and its COD and TOC values declined to 79.95% and 58.04%, the current efficiency reached 45.83% after degradation process for 2.0 h. The intermediates were monitored by the methods of GC-MS, HPLC, and IC. The main intermediates of APAP were p-benzoquinone, benzoic acid, acetic acid, maleic acid, oxalic acid, formic acid etc, and the final products were carbon dioxide and water. The goal of completely degradation of pollutant was achieved and a possible degradation way was proposed.

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

2016-07-11

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

Science.gov (United States)

Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

2015-08-01

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

Directory of Open Access Journals (Sweden)

Uvais Valiyaneerilakkal

2013-04-01

Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

Mass transfer of nonvolatile organic compounds from porous media

Science.gov (United States)

Khachikian, Crist Simon

This thesis presents data pertaining to the mass transfer of nonvolatile organic compounds from porous media. Physical properties of porous solids, including surface and pore areas, are studied. Information from these studies, along with dissolution data, are used to develop correlations relating the Sherwood Number to the Peclet Number. The contaminant used in this study is naphthalene; the solids used are Moffett Sand (MS), Borden Sand (BS), Lampblack (LB), and Silica Gel (SG). Surface area results indicate that contamination at 0.1% reduces the area of MS and SG by 48 and 37%, respectively, while contamination at 1.0% reduces the area of MS, BS, and SG by 59, 56, and 40%, respectively. Most of the reduction in area originates in the reduction of pore areas and volumes, where the contaminant precipitates. After long-term storage, surface areas did not recover to their original values due to an "irreversible" fraction of naphthalene. Treatment with heat or solvent or both was necessary to completely remove the contamination. For lampblack, treatment at 100°C decreased areas while treatment at 250°C increased them. Treatment at 250°°C probably opened pores while that at 100°C may have blocked more pores by redistributing the tar-like contaminant characteristic of lampblack. Contaminated MS and SG solids are packed in columns through which water is pumped. The effluent began at a relatively high concentration (˜70% of solubility) for both samples. However, SG column concentrations dropped quickly, never achieving steady state while the MS samples declined more gradually towards steady state. The high pore areas of the SG samples are believed to cause this behavior. The steady state portion of the MS dissolution history is used to develop mass transfer correlations. The correlation in this study differs from previous work in two major ways: (1) the exponent on the Pe is three times larger and (2) the limiting Sh is 106 times smaller. These results suggest that

Qualidade de vida em crianças com distúrbios respiratórios do sono Quality of life in children with sleep-disordered breathing

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Amaury de Machado Gomes

2012-10-01

Full Text Available Crianças podem apresentar distúrbios respiratórios do sono (DRS com repercussões na qualidade de vida. OBJETIVO: Avaliar a qualidade de vida de crianças com DRS, comparar crianças com Síndrome da Apneia Obstrutiva do Sono (SAOS e Ronco Primário (RP e identificar quais os domínios do OSA-18 estão mais comprometidos. MÉTODOS: Estudo de coorte histórica com corte transversal em crianças com história de ronco e hiperplasia adenotonsilar. Para avaliar qualidade de vida foi aplicado o questionário OSA-18 aos cuidadores e realizado polissonografia para diagnóstico. RESULTADOS: Participaram 59 crianças com média de idade de 6,7 ± 2,26 anos. O escore médio do OSA-18 foi 77,9 ± 13,22 e os domínios mais afetados foram: "preocupação dos responsáveis" (21,8 ± 4,25, "perturbação do sono" (18,8 ± 5,19, "sofrimento físico" (17,3 ± 5,0. O impacto foi pequeno em seis crianças (10,2%, moderado em 33 (55,9% e grande em 20 (33,9%. RP foi encontrado em 44 crianças (74,6%, SAOS em 15 (25,6%. SAOS tem escore maior no domínio "sofrimento físico" que RP (p = 0,04. CONCLUSÃO: Distúrbios respiratórios do sono na infância causam comprometimento na qualidade de vida e os domínios mais comprometidos do OSA-18 foram: "preocupação dos responsáveis", "perturbação do sono" e "sofrimento físico". SAOS tem o domínio "sofrimento físico" mais afetado que roncadores primários.Children may present sleep-disordered breathing (SDB and suffer with adverse effects upon their quality of life. OBJECTIVE: This study assessed the quality of life of children with SDB, compared subjects with obstructive sleep apnea syndrome (OSAS and primary snoring (PS, and identified which areas in the OSA-18 questionnaire are more affected. METHODS: This is a historical cohort cross-sectional study carried out on a consecutive sample of children with history of snoring and adenotonsillar hyperplasia. The subject's quality of life was assessed based on the

Escala de sonolência de Epworth na síndroma de apneia obstrutiva do sono: uma subjetividade subestimada

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C. Guimarães

2012-11-01

Full Text Available Resumo: A hipersonolência diurna é uma das manifestações mais relevantes da síndrome da apneia obstrutiva do sono (SAOS e pode ser avaliada quer por testes subjetivos quer por testes objetivos. A escala de sonolência de Epworth (ESE é um instrumento simples e validado que permite avaliar a sonolência diurna no contexto clínico de distúrbios do sono. No entanto, o seu caráter subjetivo pode condicionar a exata expressão do verdadeiro grau de sonolência. O uso clínico da ESE é demonstrado neste trabalho, mostrando que, no mesmo doente em momentos diferentes o score da ESE é díspar e como este score pode estar ou não relacionado em determinadas variáveis.Assim, comparamos o grau de sonolência basal com o grau de sonolência na mesma situação, mas avaliado retrospetivamente após tratamento com pressão positiva contínua das vias aéreas (Automatic Positive Airway Pressure – APAP.Realizamos um estudo prospetivo que incluiu 66 doentes observados na consulta de Patologia do Sono em que, após estudo poligráfico do sono ou cardiorrespiratório domiciliário, foi feito o diagnóstico de SAOS. Os doentes apresentavam uma idade média de 53,3 anos, sendo a maioria do sexo masculino (88%, n = 58. Os doentes preencheram o questionário da ESE no dia da primeira consulta (pré APAP e posteriormente, na consulta de seguimento, preencheram novamente a ESE referente ao período pós-tratamento com APAP e pediu-se, retrospetivamente, nova quantificação da ESE inicial. A média do score da ESE basal foi de 11,8, a retrospetiva de 15,4, com uma diferença média de 3,55 (p < 0,001 t-Test e após terapêutica com APAP 7,4. Não houve correlação entre a diferença do score da ESE (basal retrospetiva com a média de tempo de uso diário do APAP (horas, com o índice de apneia-hipopneia (IAH, com a SatO2 mínima registada

Os efeitos da idade no sono, estado de alerta e sonolência e fadiga crónica em agentes da polícia de segurança pública na região de Lisboa

OpenAIRE

Reis, Rui Miguel Gomes António

2004-01-01

Dissertação de Mestrado em Psicologia da Saúde A presente investigação pretende averiguar se a idade dos agentes da P.S.P. que trabalham por turnos têm repercussão na qualidade / quantidade do seu sono e do estado de alerta e sonolência Participaram no estudo 120 Agentes da Policia de Segurança Pública da região de Lisboa. Recorreu-se à utilização dos Questionários de Sono e Fadiga; de Dados Individuais; e a Escala de alerta e sonolência do Standard Shiftwork Index (SSI) - na versão por...

Roadmap on semiconductor-cell biointerfaces

Science.gov (United States)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

Directory of Open Access Journals (Sweden)

Sparsh Mittal

2017-02-01

Full Text Available Non-volatile memories (NVMs offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change memory and STT-RAM (spin transfer torque RAM. We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in STT-RAM. By classifying the research works based on key parameters, we highlight their similarities and distinctions. We hope that this survey will underline the crucial importance of addressing NVM reliability for ensuring their system integration and will be useful for researchers, computer architects and processor designers.

Introduction to Semiconductor Devices

Science.gov (United States)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Scanning electron microscopy of semiconductor materials

International Nuclear Information System (INIS)

Bresse, J.F.; Dupuy, M.

1978-01-01

The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1989-01-01

The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Spin physics in semiconductors

CERN Document Server

Dyakonov, Mikhail I

2008-01-01

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

Science.gov (United States)

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

Directory of Open Access Journals (Sweden)

Yoshihiro Irokawa

2011-01-01

Full Text Available In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations.

Automation and Integration in Semiconductor Manufacturing

OpenAIRE

Liao, Da-Yin

2010-01-01

Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

Sleep disorders and starting time to school impair balance in 5-year-old children Distúrbios do sono, período escolar e equilíbrio em crianças com 5 anos de idade

Directory of Open Access Journals (Sweden)

Cristiane Aparecida Moran

2005-09-01

Full Text Available OBJECTIVE: To verify if sleep disorders and differents starting time to school have impaired motor skills in 5-year-old children. METHOD: Cross-sectional design consisting of 132 children with sleep disorders and 136 normal controls of the public school in the city of São Paulo. The group with sleep disorders was identified based on a questionnaire, and motor tests for global motor coordination, fine motor coordination, perceptual-motor coordination, and static and dynamic balance were applied in all children. RESULTS: In the static balance test, more specifically in the sharpened Romberg (Tandem test, 34% of boys from the study group, who studied in the morning, failed the test (p OBJETIVO: Verificar se distúrbios do sono e diferentes períodos escolares comprometem as habilidades motoras de crianças de 5 anos. MÉTODO: Realizou-se estudo transversal com 132 crianças com distúrbio do sono e 136 controles normais de escolas públicas da cidade de São Paulo. Foram utilizados questionários para distúrbios do sono e testes para coordenação motora global, motora fina, percepto-motora, equilíbrio estático e dinâmico. RESULTADOS: No teste de equilíbrio estático, mais especificamente na prova pé ante pé, 34% dos meninos do grupo estudo, que estudavam no período da manhã, falharam no teste (p < 0,05. Na prova de apoio monopodal, 62% dos meninos do grupo estudo, que estudavam no período da manhã, falharam no teste (p < 0,05. CONCLUSÃO: Este estudo sugere que os distúrbios do sono podem interagir com o período escolar e alterar a performance motora, principalmente de meninos que estudam no período da manhã.

Modeling and simulation of floating gate nanocrystal FET devices and circuits

Science.gov (United States)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Electric Field Tuning Non-volatile Magnetism in Half-Metallic Alloys Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructure

Science.gov (United States)

Dunzhu, Gesang; Wang, Fenglong; Zhou, Cai; Jiang, Changjun

2018-03-01

We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

Science.gov (United States)

Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

2016-07-01

Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

Diode having trenches in a semiconductor region

Energy Technology Data Exchange (ETDEWEB)

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Alterações do ciclo sono-vigília moduladas por Dopamina e suas consequências Mnemônicas

OpenAIRE

Franca, Arthur Sergio Cavalcanti de

2012-01-01

As descobertas da neurociência estão em franca ascensão. A sua grande interdisciplinaridade facilita uma abordagem mais complexa do cérebro, abrangendo com profundidade diversas áreas. No entanto, muitos fenômenos que fascinam a humanidade estão longe de ser completamente elucidados; nesse contexto se encontra a relação entre a consolidação das memórias e o sono. Nesse trabalho investigamos o papel de parte do sistema dopaminérgico no processo de consolidação de memórias e n...

Electroencephalographic changes after one nigth of sleep deprivation Respostas eletrencefalográficas após uma noite de privação de sono

Directory of Open Access Journals (Sweden)

Camila Ferreira

2006-06-01

Full Text Available Total or partial sleep deprivation (SD causes degrading effects on different cognitive and psychomotor functions that might be related to electrophysiological changes frequently observed. In the present study, we investigated the effects of one night of sleep deprivation on waking EEG. Experimental protocol consisted of recording electroencephalographic data from eleven healthy young subjects before (baseline and after (time 2 one night of sleep deprivation. A natural log transformation was carried out and showed a significant increase in theta T6 (p=0.041, O2 (p=0.018 and OZ (p=0.028; and delta T6 (p=0.043 relative power; and a decrease in alpha Fp1 (p=0.040, F3 (p=0.013, Fp2 (p=0.033, T4 (p=0.050, T6 (p=0.018, O2 (p=0.011 and Oz (p=0.025 and beta (p=0.022 absolute power. These outcomes show that the EEG power spectra, after sleep deprivation, exhibit site-specific differences in particular frequency bands and corroborate for the premise of local aspects of brain adaptation after sleep deprivation, rather than global.Privação total ou parcial de sono causa efeitos deletérios em diferentes funções cognitivas e psicomotoras, que podem estar relacionados às mudanças eletrofísiológicas frequentemente observadas. No presente estudo, investigou-se os efeitos de uma noite de privação de sono nas respostas eletrencefalográficas de repouso. O protocolo experimental consistiu na coleta e gravação dos dados do qEEG de onze sujeitos jovens e saudáveis antes (momento baseline e após (momento 2 uma noite de privação de sono. Todos os dados sofreram transformação logarítmica, que evidenciou um aumento significativo nas potências relativas de teta T6 (p=0,041, O2 (p=0,018 e OZ (p=0,028; e delta T6 (p=0,043. As bandas de freqüência mais rápidas alfa Fp1 (p=0,040, F3 (p=0,013, Fp2 (p=0,033, T4 (p=0,050, T6 (p=0,018, O2 (p=0,011, Oz (p=0,025 e beta (p=0,022 apresentaram reduções significativas na potência absoluta. Os resultados

Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Fu-Chien Chiu

2013-01-01

Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

A room-temperature non-volatile CNT-based molecular memory cell

Science.gov (United States)

Ye, Senbin; Jing, Qingshen; Han, Ray P. S.

2013-04-01

Recent experiments with a carbon nanotube (CNT) system confirmed that the innertube can oscillate back-and-forth even under a room-temperature excitation. This demonstration of relative motion suggests that it is now feasible to build a CNT-based molecular memory cell (MC), and the key to bring the concept to reality is the precision control of the moving tube for sustained and reliable read/write (RW) operations. Here, we show that by using a 2-section outertube design, we are able to suitably recalibrate the system energetics and obtain the designed performance characteristics of a MC. Further, the resulting energy modification enables the MC to operate as a non-volatile memory element at room temperatures. Our paper explores a fundamental understanding of a MC and its response at the molecular level to roadmap a novel approach in memory technologies that can be harnessed to overcome the miniaturization limit and memory volatility in memory technologies.

Ultrafast THz Saturable Absorption in Doped Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hoffmann, Matthias C.

2011-01-01

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Epitaxy of semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Krogstrup, P.; Ziino, N.L.B.; Chang, W.

2015-01-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

O plantão noturno em anestesia reduz a latência ao sono El plantón nocturno en anestesia reduce la latencia al sueño Short sleep latency in residents after a period on duty in anesthesia

OpenAIRE

Lígia Andrade da Silva Telles Mathias; Christina Morotomi Funatsu Coelho; Elizabeth Pricoli Vilela; Joaquim Edson Vieira; Marcelo Lacava Pagnocca

2004-01-01

JUSTIFICATIVA E OBJETIVOS: Os médicos em geral, os anestesiologistas em particular, têm jornadas de trabalho prolongadas. Os residentes de Anestesiologia podem apresentar fadiga e estresse significativos. O objetivo deste trabalho foi verificar, em residentes de primeiro e segundo anos a latência do sono em períodos após plantão. MÉTODO: Foram avaliados 11 residentes em situações distintas: às 7 horas da manhã, após noite de sono normal (> 7h), sem plantão nos 3 dias anteriores (M1); às 7 hor...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Qualidade de Sono e Parâmetros de Dessaturação Nocturna em Doentes com Doença Pulmonar Obstrutiva Crónica e Hipoxémia entre 55-70 mmHg

Directory of Open Access Journals (Sweden)

José Moutinho Dos Santos

2001-03-01

Full Text Available RESUMO: A dessaturação nocturna é um facto reconhecido em doentes com insuficiência respiratória crónica (IRC sendo sobretudo responsabilizada no seu mecanismo fisiopatológico a redução da ventilação alveolar particularmente durante o sono REM. Este fenómeno é importante em doentes com hipoxémia basal moderada (PaO2 basal entre 55-70 mmHg dada a posição particular da SaO2 na curva de dissociação de hemoglobina. Por outro lado, tem sido referido na literatura alterações da qualidade do sono em doentes com Doença Pulmonar Obstrutiva Crónica que afectam a normal estrutura do sono. O objectivo do trabalho foi avaliar de que modo a qualidade do sono poderia afectar os parâmetros de dessaturação nocturna e a sua definição como doente dessaturador.Vinte doentes (15 homens; 5 mulheres; idade X±dp - 68,2±6,1 anos com IRC estabilizada secundária a DPOC (FEV1 - 1,024±0,431 litros; 47±16,5 % do prognosticado foram submetidos a estudo poligráfico do sono em duas noites consecutivas em ar ambiente, sem medicação sedativa e sob medicação broncodilatora habitual. Na primeira noite de sono o padrão geral foi de insónia e sono fragmentado (aumento do tempo de latência ao sono e do número de “arousals” e diminuição da eficiência do sono com consequente redução do tempo em sono 3-4 e sono REM. Na segunda noite de estudo, verificou-se redução significativa do tempo de latência (72±65,5 vs. 28±31,4 minutos; p=0.008 e aumento da eficiência do sono (52±26,5 vs. 76±13.4%; p<0.0001 sem variação significativa do número de “arousals” e do tempo em sono profundo mas com aumento significativo do sono REM (6±4,8 vs. 11±6,5 %. Não se constataram diferenças significativas nos parâmetros de dessaturação nocturna nas duas noites embora se verifique grande variabilidade

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Semiconductor materials and their properties

NARCIS (Netherlands)

Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

2017-01-01

Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

Laboratory Validation of Four Black Carbon Measurement Methods for Determination of the Nonvolatile Particulate Matter (nvPM) Mass Emissions from Commercial Aircraft Engines

Science.gov (United States)

Four candidate black carbon (BC) measurement techniques have been identified by the SAE International E-31 Committee for possible use in determining nonvolatile particulate matter (nvPM) mass emissions during commercial aircraft engine certification. These techniques are carbon b...

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Nuclear radiation detection by a variband semiconductor

International Nuclear Information System (INIS)

Volkov, A.S.

1981-01-01

Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

EPA Method 8321B (SW-846): Solvent-Extractable Nonvolatile Compounds by High Performance Liquid Chromatography-Thermospray-Mass Spectrometry (HPLC-TS-MS) or Ultraviolet (UV) Detection

Science.gov (United States)

Method 8321B describes procedures for preparation and analysis of solid, aqueous liquid, drinking water and wipe samples using high performance liquid chromatography and mass spectrometry for extractable non-volatile compounds.

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Sleep disturbances and prevalence of depression in systemic lupus erythematosus patients receiving intravenous cyclophosphamide Alterações do sono e prevalência de depressão em pacientes lúpicos em uso de pulsoterapia com ciclofosfamida

Directory of Open Access Journals (Sweden)

Rafael Carvalho Mesquita

2007-12-01

Full Text Available BACKGROUND: Pulse i.v. cyclophosphamide is a therapeutic option in severe forms of systemic lupus erythematosus (SLE. However, the overall toxicity and risk profile are yet to be adequately defined. OBJECTIVE: To evaluate the occurrence of sleep disturbances in SLE patients subjected to i.v. cyclophosphamide. METHODS: We studied thirty consecutive SLE patients (27 female age range 14 to 53 years (mean 30.5 ± 10 years that received i.v. cyclophosphamide (mg (mean 948.27 ± 221.39. Depressive symptoms, quality of sleep, and the presence of excessive daytime sleepiness were evaluated. Disease severity was assessed by the SLEDAI. Quality of sleep was assessed by the Pittsburgh Sleep Quality Index (PSQI and excessive daytime sleepiness (EDS by the Epworth Sleepiness Scale (ESS. Depressive symptoms were evaluated using the 21-item Beck Depression Inventory (BDI. RESULTS: SLEDAI values ranged from 2 to 46 (mean 17 ± 11.4. The most common comorbidities were systemic arterial hypertension (30%, anemia (23.3%, osteoporosis (23.3%, and cardiomyopathy (6.6%. Seizures occurred in one patient (3.3%. Poor quality of sleep (PSQI e" 6 and EDS (ESS >10 were found in 66.7% and 30% of the patients, respectively. Depressive symptoms (BDI >19 were present in 40% of the patients and were associated with poor sleep quality (P = 0.03. CONCLUSIONS: Our findings show an increased prevalence of poor sleep quality and depressive symptoms in SLE patients receiving pulse i.v. cyclophosphamide. These findings were similar to other previously reported series of SLE patients regardless of the therapies used.INTRODUÇÃO: O uso de ciclofosfamida endovenosa é uma opção terapêutica nas formas graves de lúpus eritematoso sistêmico (LES. No entanto, a toxicidade e o perfil de risco ainda não estão adequadamente definidos. OBJETIVO: Avaliar sobre a ocorrência de alterações do sono em pacientes portadores de LES submetidos à terapia com ciclofosfamida endovenosa. M�

BLACKCOMB2: Hardware-software co-design for non-volatile memory in exascale systems

Energy Technology Data Exchange (ETDEWEB)

Mudge, Trevor [Univ. of Michigan, Ann Arbor, MI (United States)

2017-12-15

This work was part of a larger project, Blackcomb2, centered at Oak Ridge National Labs (Jeff Vetter PI) to investigate the opportunities for replacing or supplementing DRAM main memory with nonvolatile memory (NVmemory) in Exascale memory systems. The goal was to reduce the energy consumed by in future supercomputer memory systems and to improve their resiliency. Building on the accomplishments of the original Blackcomb Project, funded in 2010, the goal for Blackcomb2 was to identify, evaluate, and optimize the most promising emerging memory technologies, architecture hardware and software technologies, which are essential to provide the necessary memory capacity, performance, resilience, and energy efficiency in Exascale systems. Capacity and energy are the key drivers.

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids

Directory of Open Access Journals (Sweden)

Hongbin Lin

2018-05-01

Full Text Available Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC. Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln, glutamic acid (Glu, aspartic acid (Asp and asparagines (Asn were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

Flavor Compounds in Pixian Broad-Bean Paste: Non-Volatile Organic Acids and Amino Acids.

Science.gov (United States)

Lin, Hongbin; Yu, Xiaoyu; Fang, Jiaxing; Lu, Yunhao; Liu, Ping; Xing, Yage; Wang, Qin; Che, Zhenming; He, Qiang

2018-05-29

Non-volatile organic acids and amino acids are important flavor compounds in Pixian broad-bean paste, which is a traditional Chinese seasoning product. In this study, non-volatile organic acids, formed in the broad-bean paste due to the metabolism of large molecular compounds, are qualitatively and quantitatively determined by high-performance liquid chromatography (HPLC). Amino acids, mainly produced by hydrolysis of soybean proteins, were determined by the amino acid automatic analyzer. Results indicated that seven common organic acids and eighteen common amino acids were found in six Pixian broad-bean paste samples. The content of citric acid was found to be the highest in each sample, between 4.1 mg/g to 6.3 mg/g, and malic acid were between 2.1 mg/g to 3.6 mg/g ranked as the second. Moreover, fumaric acid was first detected in fermented bean pastes albeit with a low content. For amino acids, savory with lower sour taste including glutamine (Gln), glutamic acid (Glu), aspartic acid (Asp) and asparagines (Asn) were the most abundant, noted to be 6.5 mg/g, 4.0 mg/g, 6.4 mg/g, 4.9 mg/g, 6.2 mg/g and 10.2 mg/g, and bitter taste amino acids followed. More importantly, as important flavor materials in Pixian broad-bean paste, these two groups of substances are expected to be used to evaluate and represent the flavor quality of Pixian broad-bean paste. Moreover, the results revealed that citric acid, glutamic acid, methionine and proline were the most important flavor compounds. These findings are agreat contribution for evaluating the quality and further assessment of Pixian broad-bean paste.

Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

Science.gov (United States)

Katase, Takayoshi; Suzuki, Yuki; Ohta, Hiromichi

2017-10-01

The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO.7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20 V for a very long current-flowing-time (t) ˜40 min, primarily due to the low σ [2.0 × 10-8 S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the σ of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 × 10-8 S cm-1 to 2.5 × 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

Heterogeneous sono-Fenton-like process using martite nanocatalyst prepared by high energy planetary ball milling for treatment of a textile dye.

Science.gov (United States)

Dindarsafa, Mahsa; Khataee, Alireza; Kaymak, Baris; Vahid, Behrouz; Karimi, Atefeh; Rahmani, Amir

2017-01-01

High energy planetary ball milling was applied to prepare sono-Fenton nanocatalyst from natural martite (NM). The NM samples were milled for 2-6h at the speed of 320rpm for production of various ball milled martite (BMM) samples. The catalytic performance of the BMMs was greater than the NM for treatment of Acid Blue 92 (AB92) in heterogeneous sono-Fenton-like process. The NM and the BMM samples were characterized by XRD, FT-IR, SEM, EDX and BET analyses. The particle size distribution of the 6h-milled martite (BMM 3 ) was in the range of 10-90nm, which had the highest surface area compared to the other samples. Then, the impact of main operational parameters was investigated on the process. Complete removal of the dye was obtained at the desired conditions including initial pH 7, 2.5g/L BMM 3 dosage, 10mg/L AB92 concentration, and 150W ultrasonic power after 30min of treatment. The treatment process followed pseudo-first order kinetic. Environmentally-friendly modification of the NM, low leached iron amount and repeated application at milder pH were the significant benefits of the BMM 3 . The GC-MS was successfully used to identify the generated intermediates. Eventually, an artificial neural network (ANN) was applied to predict the AB92 removal efficiency based upon the experimental data with a proper correlation coefficient (R 2 =0.9836). Copyright © 2016 Elsevier B.V. All rights reserved.

Quality of sleep in postoperative surgical oncologic patients La calidad del sueño en pacientes sometidos a cirugía oncológica Qualidade do sono em pacientes submetidos à cirurgia oncológica

Directory of Open Access Journals (Sweden)

Elizabeth Barichello

2009-08-01

Full Text Available This study aimed to evaluate surgical-oncologic patients' quality of sleep through the Pittsburgh Sleep Quality Index (PSQI questionnaire. It is an exploratory study with transversal-observational design, in 46 postoperative head & neck and urology cancer patients. The PSQI questionnaire was used to evaluate the subjective quality of sleep and the occurrence of sleep disorders. Six PSQI components were statistically significant and 78.3% of the interviewees had impaired subjective quality of sleep. Among factors leading to sleep disorders we point out: taking too long to fall asleep; waking up in the middle of the night; getting up to go to the bathroom and napping during the day. This study is expected to sensitize the nursing team regarding the need to investigate quality of sleep and causes of its disorders in cancer survivors for an effective course of action.El objetivo del estudio fue evaluar la calidad del sueño en pacientes quirúrgicos oncológicos, utilizando el cuestionario Índice de Calidad del Sueño de Pittsburgh (PSQI, para mensurar la calidad subjetiva del sueño y la ocurrencia de disturbios. Consistió en una investigación con delineamiento observacional transversal, envolviendo 46 pacientes con diagnóstico de cáncer, sometidos a procedimientos quirúrgicos de las especialidades Cabeza Cuello y Urología. Seis componentes del PSQI fueron estadísticamente significativos y 73,9% de los entrevistados presentaron comprometimiento de la calidad del sueño. Entre las causas de los disturbios del sueño se destaca: demorar para dormir, despertar en el medio de la noche, levantarse para ir al baño y dormitar durante el día. Se espera que este estudio sensibilice al equipo de enfermería sobre la necesidad de investigar la calidad y las causas de los disturbios del sueño en sobrevivientes de cáncer, para que haya una intervención efectiva.O objetivo do estudo foi avaliar a qualidade do sono em pacientes cirúrgicos oncol

Ternary chalcopyrite semiconductors

CERN Document Server

Shay, J L; Pamplin, B R

2013-01-01

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

Science.gov (United States)

Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

2016-02-01

We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

Graphene-quantum-dot nonvolatile charge-trap flash memories

International Nuclear Information System (INIS)

Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

2014-01-01

Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

Multi-objective optimization of oxidative desulfurization in a sono-photochemical airlift reactor.

Science.gov (United States)

Behin, Jamshid; Farhadian, Negin

2017-09-01

Response surface methodology (RSM) was employed to optimize ultrasound/ultraviolet-assisted oxidative desulfurization in an airlift reactor. Ultrasonic waves were incorporated in a novel-geometry reactor to investigate the synergistic effects of sono-chemistry and enhanced gas-liquid mass transfer. Non-hydrotreated kerosene containing sulfur and aromatic compounds was chosen as a case study. Experimental runs were conducted based on a face-centered central composite design and analyzed using RSM. The effects of two categorical factors, i.e., ultrasound and ultraviolet irradiation and two numerical factors, i.e., superficial gas velocity and oxidation time were investigated on two responses, i.e., desulfurization and de-aromatization yields. Two-factor interaction (2FI) polynomial model was developed for the responses and the desirability function associate with overlay graphs was applied to find optimum conditions. The results showed enhancement in desulfurization ability corresponds to more reduction in aromatic content of kerosene in each combination. Based on desirability approach and certain criteria considered for desulfurization/de-aromatization, the optimal desulfurization and de-aromatization yields of 91.7% and 48% were obtained in US/UV/O 3 /H 2 O 2 combination, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Coherent dynamics in semiconductors

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1998-01-01

enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

Science.gov (United States)

Huh, In; Cheon, Woo Young; Choi, Woo Young

2016-04-01

A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

A direct metal transfer method for cross-bar type polymer non-volatile memory applications

International Nuclear Information System (INIS)

Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

2008-01-01

Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Intrinsic Ge nanowire nonvolatile memory based on a simple core–shell structure

International Nuclear Information System (INIS)

Chen, Wen-Hua; Liu, Chang-Hai; Li, Qin-Liang; Sun, Qi-Jun; Liu, Jie; Gao, Xu; Sun, Xuhui; Wang, Sui-Dong

2014-01-01

Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide. (paper)

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Life-cycle assessment of semiconductors

CERN Document Server

Boyd, Sarah B

2012-01-01

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Science.gov (United States)

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Reflection technique for thermal mapping of semiconductors

Science.gov (United States)

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

The effects of biodiesels on semivolatile and nonvolatile particulate matter emissions from a light-duty diesel engine.

Science.gov (United States)

Cheng, Yuan; Li, Shao-Meng; Liggio, John; Hayden, Katherine; Han, Yuemei; Stroud, Craig; Chan, Tak; Poitras, Marie-Josée

2017-11-01

Semivolatile organic compounds (SVOCs) represent a dominant category of secondary organic aerosol precursors that are increasingly included in air quality models. In the present study, an experimental system was developed and applied to a light-duty diesel engine to determine the emission factors of particulate SVOCs (pSVOCs) and nonvolatile particulate matter (PM) components at dilution ratios representative of ambient conditions. The engine was tested under three steady-state operation modes, using ultra-low-sulfur diesel (ULSD), three types of pure biodiesels and their blends with ULSD. For ULSD, the contribution of pSVOCs to total particulate organic matter (POM) mass in the engine exhaust ranged between 21 and 85%. Evaporation of pSVOCs from the diesel particles during dilution led to decreases in the hydrogen to carbon ratio of POM and the PM number emission factor of the particles. Substituting biodiesels for ULSD could increase pSVOCs emissions but brought on large reductions in black carbon (BC) emissions. Among the biodiesels tested, tallow/used cooking oil (UCO) biodiesel showed advantages over soybean and canola biodiesels in terms of both pSVOCs and nonvolatile PM emissions. It is noteworthy that PM properties, such as particle size and BC mass fraction, differed substantially between emissions from conventional diesel and biodiesels. Copyright © 2017 Elsevier Ltd. All rights reserved.

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

International Nuclear Information System (INIS)

Mar Lar Win

2011-12-01

Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

Occurence and dietary exposure of volatile and non-volatile N-Nitrosamines in processed meat products

DEFF Research Database (Denmark)

Herrmann, Susan Strange; Duedahl-Olesen, Lene; Granby, Kit

Nitrite and nitrate have for many decades been used for preservation of meat. However, nitrite can react with secondary amines in meat to form N-Nitrosamines (NAs), many of which have been shown to be genotoxic1 . The use of nitrite therefore ought to be limited as much as possible. To maintain...... a high level of consumer protection Denmark obtains National low limits of the nitrite use in meat products. An estimation of the dietary exposure to volatile NAs (VNA) and non-volatile NAs (NVNA) is necessary when performing a risk assessment of the use of nitrite and nitrate for meat preservation....

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Semiconductor Nanocrystals for Biological Imaging

Energy Technology Data Exchange (ETDEWEB)

Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

2005-06-28

Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

Progress in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Walton, J.; Gatti, E.

1985-01-01

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

Síndroma de apneia obstrutiva do sono como causa de acidentes de viação

Directory of Open Access Journals (Sweden)

M. Aguiar

2009-05-01

Full Text Available Resumo: Vários estudos demonstram que os doentes com síndroma de apneia obstrutiva do sono (SAOS têm um risco aumentado de acidentes de viação. O objectivo do presente trabalho consistiu em analisar, nestes doentes, se há diferenças nos que referem acidentes e/ /ou quase acidentes e aqueles que o não fazem.Material e métodos: Estudaram-se prospectivamen-te 163 doentes com SAOS (índice apneia/hipopneia (IAH>10/h diagnosticados por polissonografia noc-turna (PSG, todos condutores de veículos, 18,4% do quais profissionais. Na altura da entrevista clínica foi inquirido se tinham tido, nos três anos antes acidentes e/ou quase acidentes devido a hipersonia diurna (Grupo II=74 ou não (Grupo I=89.Estes dois grupos foram comparados quanto a: idade, índice de massa corporal (IMC, escala de sonolência de Epworth (ESE, PaO2 e PaCO2 diurnas, avaliação da qualidade de vida pelo inquérito Functional Outcomes of Sleep Questionnaire (FOSQ teste e dados da polissonografia – tempo total de sono (TTS, eficiência do sono, estádios do sono, índice de microdespertares (IMD, índice de apneia/hipopneia (IAH, SaO2 mínima e média, % tempo SaO210/h diagnosed using nocturnal polysomnography (NPSG, all drivers, 18.4% of whom drove for a living. Patients were asked at their first clinical interview to self-report road traffic accidents and/or near misses over the past 3 years which had been caused by abnormal daytime drowsiness. This allowed patients to be divided into two groups, those who had had road traffic accidents and/or near misses and those who had not. Both were compared as to age, body mass index (BMI, Epworth Sleepiness Scale (ESS, daytime PaO2 and PaCO2, Functional Outcomes of Sleep Questionnaire (FOSQ test and NPSG data. This latter was total sleep time (TTS, sleep efficiency, sleep stages, arousal index (ARI, AHI, minimal and average SaO2, % of time with SaO2<90% (T90, desaturation

Evaluation of non-volatile metabolites in beer stored at high temperature and utility as an accelerated method to predict flavour stability.

Science.gov (United States)

Heuberger, Adam L; Broeckling, Corey D; Sedin, Dana; Holbrook, Christian; Barr, Lindsay; Kirkpatrick, Kaylyn; Prenni, Jessica E

2016-06-01

Flavour stability is vital to the brewing industry as beer is often stored for an extended time under variable conditions. Developing an accelerated model to evaluate brewing techniques that affect flavour stability is an important area of research. Here, we performed metabolomics on non-volatile compounds in beer stored at 37 °C between 1 and 14 days for two beer types: an amber ale and an India pale ale. The experiment determined high temperature to influence non-volatile metabolites, including the purine 5-methylthioadenosine (5-MTA). In a second experiment, three brewing techniques were evaluated for improved flavour stability: use of antioxidant crowns, chelation of pro-oxidants, and varying plant content in hops. Sensory analysis determined the hop method was associated with improved flavour stability, and this was consistent with reduced 5-MTA at both regular and high temperature storage. Future studies are warranted to understand the influence of 5-MTA on flavour and aging within different beer types. Copyright © 2016 Elsevier Ltd. All rights reserved.

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

International Nuclear Information System (INIS)

Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

2008-01-01

The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

Semiconductor sensors

International Nuclear Information System (INIS)

Hartmann, Frank

2011-01-01

Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

Qualidade do sono e depressão: que relações sintomáticas em crianças de idade escolar Sleep quality and depression: what symptomatic link in school-aged children

Directory of Open Access Journals (Sweden)

Filipa Serrão

2007-12-01

Full Text Available O sono e a depressão têm sido associados, tendo-se questionado se um padrão de sono deficitário era condição necessária e suficiente para o aparecimento de sintomatologia depressiva. Este estudo procura averiguar a prevalência dos problemas de sono e da depressão em crianças em idade escolar. Foram avaliadas em dois momentos 467 crianças da escola primária, com idades compreendidas entre os 6 e os 11 anos de idade (M=8,70; DP=0,692. Os resultados revelam uma diminuição na prevalência ao longo do ano lectivo nos dois quadros nosológicos, verificando-se também uma relação negativa entre o rendimento académico e a sintomatologia depressiva nos dois momentos de avaliação (T1 rho=-0,349; p=0,000; T2 rho=-0,406; p=0,000. Serão discutidas implicação dos resultados para a avaliação e intervenção das crianças, contemplando a possibilidade de uma intervenção precoce de modo a prevenir o aparecimento de um estado depressivo na infância que venha manter ou agravar os problemas do sono.Sleep and depression have been linked and questioned if a deficit sleep pattern were a sufficient condition for arising of depressive symptoms. This study tries to examine the prevalence of sleep problems and depression in school-aged children. Four-hundred and sixty-seven elementary school-children, aged 6 and 11 years (M= 8,70; DP=0,692 were evaluated in two moments. The results revealed that during the school-year both nosological entities reduced prevalence rates, and also a negative association between academic performance and depressive symptoms were found in both evaluation moments (T1 rho=-0,349; p=0,000; T2 rho=-0,406; p=0,000. The implications of such data for evaluation and intervention in children will be discussed, taking into account the possibility of a early interventions to prevent onset of depressive states in infancy which maintain and heighten sleep problems.

Terahertz Nonlinear Optics in Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2013-01-01

We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Method for the Collection, Gravimetric and Chemical Analysis of Nonvolatile Residue (NVR) on Surfaces

Science.gov (United States)

Gordon, Keith; Rutherford, Gugu; Aranda, Denisse

2017-01-01

Nonvolatile residue (NVR), sometimes referred to as molecular contamination is the term used for the total composition of the inorganic and high boiling point organic components in particulates and molecular films deposited on critical surfaces surrounding space structures, with the particulate and NVR contamination originating primarily from pre-launch operations. The "nonvolatile" suggestion from the terminology NVR implies that the collected residue will not experience much loss under ambient conditions. NVR has been shown to have a dramatic impact on the ability to perform optical measurements from platforms based in space. Such contaminants can be detected early by the controlled application of various detection techniques and contamination analyses. Contamination analyses are the techniques used to determine if materials, components, and subsystems can be expected to meet the performance requirements of a system. Of particular concern is the quantity of NVR contaminants that might be deposited on critical payload surfaces from these sources. Subsequent chemical analysis of the contaminant samples by infrared spectroscopy and gas chromatography mass spectrometry identifies the components, gives semi-quantitative estimates of contaminant thickness, indicates possible sources of the NVR, and provides guidance for effective cleanup procedures. In this report, a method for the collection and determination of the mass of NVR was generated by the authors at NASA Langley Research Center. This report describes the method developed and implemented for collecting NVR contaminants, and procedures for gravimetric and chemical analysis of the residue obtained. The result of this NVR analysis collaboration will help pave the way for Langley's ability to certify flight hardware outgassing requirements in support of flight projects such as Stratospheric Aerosol and Gas Experiment III (SAGE III), Clouds and the Earth's Radiant Energy System (CERES), Materials International

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Market survey of semiconductors

International Nuclear Information System (INIS)

Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

1977-06-01

Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

Introductory semiconductor device physics

CERN Document Server

Parker, Greg

2004-01-01

ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

Resultados preliminares do tratamento dos pacientes submetidos a radiofreqüência (baixa freqüência, somnoplastia no ronco e apnéia leve do sono

Directory of Open Access Journals (Sweden)

Dibbern Ralph S.

2002-01-01

Full Text Available Introdução: O ronco afeta 5 a 50% da população tornando-se um problema médico e social importante. O tratamento pode ser com medidas comportamentais, CPAP e cirúrgico. Objetivo: Avaliar os resultados pós-operatórios dos pacientes submetidos à radiofreqüência em palato. Forma de estudo: retrospectivo clínico. Material e método: 28 pacientes submetidos à radio-freqüência em palato, com diagnóstico de Ronco e Apnéia Leve do Sono. Observamos os resultados pós-operatórios através das Escalas de Epworth, Ronco e Sonolência diurna, complicações e percentual de melhora dos sintomas. A análise estatística foi pelo Mann Whytney Test. Resultados: 16 pacientes com melhora subjetiva do Ronco acima de 70% após a cirurgia; 26 pacientes mostraram redução significativa pelas Escalas, com complicações mínimas. Conclusão: Radio-freqüência é um método seguro e eficaz no tratamento do Ronco e Apnéia Leve do Sono. Resultados melhores serão obtidos com avaliação criteriosa pré e pós-operatórias.

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

International Nuclear Information System (INIS)

Chen, Zhendong; Gao, Cunxu; Wei, Yanping; Zhang, Peng; Wang, Yutian; Zhang, Chao; Ma, Zhikun

2017-01-01

Electric-field control of magnetism is now an attractive trend to approach a new kind of fast, low-power-cost memory device. In this work, we report a strong non-volatile electric control of magnetism in an Fe–Al/Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 heterostructure. In this system, a 90° rotation of the in-plane uniaxial magnetic anisotropy is exhibited during the increase of the external electric field, which means the easy axis turns into a hard axis and the hard axis turns into an easy one. Additionally, a non-volatile switch of the remanence is observed after a sweeping of the electric field from 0 kV cm −1 to  ±  10 kV cm −1 , then back to 0 kV cm −1 . More interestingly, a 20% non-volatile magnetic state tuning driven by individual pulse electric fields is shown in contrast to large tuning up to 120% caused by pulse electric fields with small assistant pulse magnetic fields, which means a 180° reverse of the magnetization. These remarkable behaviors demonstrated in this heterostructure reveal a promising potential application in magnetic memory devices mediated by electric fields. (paper)

Dispersion-induced nonlinearities in semiconductors

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, A.

2002-01-01

A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

Calculation of the total plasma concentration of nonvolatile weak acids and the effective dissociation constant of nonvolatile buffers in plasma for use in the strong ion approach to acid-base balance in cats.

Science.gov (United States)

McCullough, Sheila M; Constable, Peter D

2003-08-01

To determine values for the total concentration of nonvolatile weak acids (Atot) and effective dissociation constant of nonvolatile weak acids (Ka) in plasma of cats. Convenience plasma samples of 5 male and 5 female healthy adult cats. Cats were sedated, and 20 mL of blood was obtained from the jugular vein. Plasma was tonometered at 37 degrees C to systematically vary PCO2 from 8 to 156 mm Hg, thereby altering plasma pH from 6.90 to 7.97. Plasma pH, PCO2, and concentrations of quantitatively important strong cations (Na+, K+, and Ca2+), strong anions (Cl-, lactate), and buffer ions (total protein, albumin, and phosphate) were determined. Strong ion difference was estimated from the measured strong ion concentrations and nonlinear regression used to calculate Atot and Ka from the measured pH and PCO2 and estimated strong ion difference. Mean (+/- SD) values were as follows: Atot = 24.3 +/- 4.6 mmol/L (equivalent to 0.35 mmol/g of protein or 0.76 mmol/g of albumin); Ka = 0.67 +/- 0.40 x 10(-7); and the negative logarithm (base 10) of Ka (pKa) = 7.17. At 37 degrees C, pH of 7.35, and a partial pressure of CO2 (PCO2) of 30 mm Hg, the calculated venous strong ion difference was 30 mEq/L. These results indicate that at a plasma pH of 7.35, a 1 mEq/L decrease in strong ion difference will decrease pH by 0.020, a 1 mm Hg decrease in PCO2 will increase plasma pH by 0.011, and a 1 g/dL decrease in albumin concentration will increase plasma pH by 0.093.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Science.gov (United States)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

Science.gov (United States)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

Science.gov (United States)

Wang, Lidan; Su, Zisheng; Wang, Cheng

2012-05-01

Nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (F16CuPc) single layer sandwiched between indium tin oxide (ITO) anode and Al cathode. The as fabricated device remains in ON state and it can be tuned to OFF state by applying a reverse bias. The ON/OFF current ratio of the device can reach up to 2.3 × 103. Simultaneously, the device shows long-term storage stability and long retention time in air. The ON/OFF transition is attributed to the formation and destruction of the interfacial dipole layer in the ITO/F16CuPc interface, and such a mechanism is different from previously reported ones.

Measurements of the size dependence of the concentration of nonvolatile material in fog droplets

Science.gov (United States)

Ogren, J. A.; Noone, K. J.; Hallberg, A.; Heintzenberg, J.; Schell, D.; Berner, A.; Solly, I.; Kruisz, C.; Reischl, G.; Arends, B. G.; Wobrock, W.

1992-11-01

Measurements of the size dependence of the mass concentration of nonvolatile material dissolved and suspended in fog droplets were obtained with three complementary approaches, covering a size range from c. 1 50µm diameter: a counterflow virtual impactor, an eight-stage aerosol impactor, and a two-stage fogwater impactor. Concentrations were observed to decrease with size over the entire range, contrary to expectations of increasing concentrations at larger sizes. It is possible that the larger droplets had solute concentrations that increased with increasing size, but that the increase was too weak for the measurements to resolve. Future studies should consider the hypothesis that the droplets were coated with a surface-active substance that hindered their uptake of water.

Molecular semiconductors photoelectrical properties and solar cells

CERN Document Server

Rees, Ch

1985-01-01

During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

Sono-synthesis and characterization of bimetallic Ni-Co/Al2O3-MgO nanocatalyst: Effects of metal content on catalytic properties and activity for hydrogen production via CO2 reforming of CH4.

Science.gov (United States)

Abdollahifar, Mozaffar; Haghighi, Mohammad; Babaluo, Ali Akbar; Talkhoncheh, Saeed Khajeh

2016-07-01

Sono-dispersion of Ni, Co and Ni-Co over Al2O3-MgO with Al/Mg ratio of 1.5 was prepared and tested for dry reforming of methane. The samples were characterized by XRD, FESEM, PSD, EDX, TEM, BET and FTIR analyses. In order to assess the effect of ultrasound irradiation, Ni-Co/Al2O3-MgO with Co content of 8% prepared via sonochemistry and impregnation methods. The sono-synthesized sample showed better textural properties and higher activity than that of impregnated one. Comparison of XRD patterns indicated that the NiO peaks became broader by increasing Co content over the support. The FESEM images displayed the particles are small and well-dispersed as a result of sonochemistry method. Also, EDX analysis demonstrated better dispersion of Ni and Co as a result of sonochemistry method in confirmation of XRD analysis. The sono-synthesized Ni-Co/Al2O3-MgO as a superior nanocatalyst with Co content of 3% illustrates much higher conversions (97.5% and 99% for CH4 and CO2 at 850 °C), yields (94% and 96% for H2 and CO at 850 °C) and 0.97 of H2/CO molar ratio in all samples using an equimolar feed ratio at 850 °C. During the 1200 min stability test, H2/CO molar ratio remained constant for the superior nanocatalyst. Copyright © 2016 Elsevier B.V. All rights reserved.

Achados radiológicos em pacientes portadores de apneia obstrutiva do sono Radiological findings in patients with obstructive sleep apnea

Directory of Open Access Journals (Sweden)

Carlos Fernando de Mello Junior

2013-02-01

Full Text Available A apneia obstrutiva do sono (AOS é caracterizada por obstruções recorrentes das vias aéreas superiores durante o sono que ocorrem no nível da faringe. Apesar de a análise cefalométrica ser um importante método no diagnóstico das deformidades craniofaciais, a TC e a ressonância magnética vêm se destacando como os principais métodos de imagem para a investigação das eventuais causas da AOS que, na maioria das vezes, é multifatorial. Esses métodos permitem uma excelente avaliação nos diversos planos anatômicos do eventual sítio da obstrução, o que permite uma melhor avaliação clínica e abordagem cirúrgica. O presente ensaio pictórico tem como objetivo descrever os aspectos que devem ser avaliados no diagnóstico por imagem dos principais fatores predisponentes para a AOS.Obstructive sleep apnea (OSA is characterized by recurrent upper airway obstruction occurring at the level of the pharynx during sleep. Although cephalometric analysis is an important method in the diagnosis of craniofacial deformities, CT and magnetic resonance imaging have been highlighted as the major imaging methods to investigate the possible causes of OSA, which, in most cases, is multifactorial. Magnetic resonance and CT both allow an excellent evaluation of the various anatomical planes of the site of obstruction, which enables better clinical assessment and surgical approach. This pictorial essay aims to describe the aspects that must be evaluated in the diagnostic imaging of patients presenting with the major predisposing factors for OSA.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...