Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

International Nuclear Information System (INIS)

Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

1994-01-01

The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

Energy Technology Data Exchange (ETDEWEB)

Sachleben, Joseph Robert [Lawrence Berkeley Lab., CA (United States); California Univ., Berkeley, CA (United States). Dept. of Chemistry

1993-09-01

Semiconductor nanocrystals, small biomolecules, and ¹³C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution ¹H and ¹³C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10^-8 s^-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O₂ and ultraviolet. A method for measuring ¹⁴N-¹H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T₁ and T₂ experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in ¹³C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

Solid state radiative heat pump

Science.gov (United States)

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Solid state physics and physicists of the post war Latvia

International Nuclear Information System (INIS)

Zakis, J.

2003-01-01

In Latvia during the so-called post war period (1944-1991) fields that promoted the research activities were nuclear research and semiconductor electronics. Being considered as classified the researches in these fields were separated from the universities and transferred to the institutes of recently founded Latvian Academy of Sciences. The institutes related to the so-called sector management ministries performed the most of research in semiconductor physics. Research activities at the University of Latvia were mainly in the basic solid state physics (ionic crystals, Ferro ceramics). Despite of being controlled research activities in solid-state physics in Latvia were on relatively high level recognized both nationally and internationally

Spring meeting of the DPG Working Group 'Solid state physics'

International Nuclear Information System (INIS)

1996-01-01

The volume contains abstracts of the contributions to the Spring Meeting of the Solid State Physics Section with the topics dielectric solids, thin films, dynamics and statistical physics, semiconductor physics, magnetism, metal physics, surface physics, low temperature physics, vacuum physics and engineering, chemical physics. (MM)

Fabrication of solid-state secondary battery using semiconductors and evaluation of its charge/discharge characteristics

Science.gov (United States)

Sasaki, Atsuya; Sasaki, Akito; Hirabayashi, Hideaki; Saito, Shuichi; Aoki, Katsuaki; Kataoka, Yoshinori; Suzuki, Koji; Yabuhara, Hidehiko; Ito, Takahiro; Takagi, Shigeyuki

2018-04-01

Li-ion batteries have attracted interest for use as storage batteries. However, the risk of fire has not yet been resolved. Although solid Li-ion batteries are possible alternatives, their performance characteristics are unsatisfactory. Recently, research on utilizing the accumulation of carriers at the trap levels of semiconductors has been performed. However, the detailed charge/discharge characteristics and principles have not been reported. In this report, we attempted to form new n-type oxide semiconductor/insulator/p-type oxide semiconductor structures. The battery characteristics of these structures were evaluated by charge/discharge measurements. The obtained results clearly indicated the characteristics of rechargeable batteries. Furthermore, the fabricated structure accumulated an approximately 5000 times larger number of carriers than a parallel plate capacitor. Additionally, by constructing circuit models based on the experimental results, the charge/discharge mechanisms were considered. This is the first detailed experimental report on a rechargeable battery that operates without the double injection of ions and electrons.

Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

KAUST Repository

Abulikemu, Mutalifu

2015-12-26

Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

KAUST Repository

Abulikemu, Mutalifu; Del Gobbo, Silvano; Anjum, Dalaver H.; Malik, Mohammad A; Bakr, Osman

2015-01-01

Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

Physical Acoustics in the Solid State

CERN Document Server

Lüthi, B

2006-01-01

Suitable for researchers and graduate students in physics and material science, "Physical Acoustics in the Solid State" reviews the modern aspects in the field, including many experimental results, especially those involving ultrasonics. Practically all fields of solid-state physics are covered: metals, semiconductors, magnetism, superconductivity, different kinds of phase transitions, low-dimensional systems, and the quantum Hall effect. After a review of the relevant experimental techniques and an introduction to the theory of elasticity, emphasizing the symmetry aspects, applications in the various fields of condensed matter physics are presented. Also treated are Brillouin-scattering results and results from thermodynamic investigations, such as thermal expansion and specific heat.

Physical Acoustics in the Solid State

CERN Document Server

Lüthi, Bruno

2007-01-01

Suitable for researchers and graduate students in physics and material science, "Physical Acoustics in the Solid State" reviews the modern aspects in the field, including many experimental results, especially those involving ultrasonics. Practically all fields of solid-state physics are covered: metals, semiconductors, magnetism, superconductivity, different kinds of phase transitions, low-dimensional systems, and the quantum Hall effect. After a review of the relevant experimental techniques and an introduction to the theory of elasticity, emphasizing the symmetry aspects, applications in the various fields of condensed matter physics are presented. Also treated are Brillouin-scattering results and results from thermodynamic investigations, such as thermal expansion and specific heat.

Proceedings of the DAE solid state physics symposium. V. 51

International Nuclear Information System (INIS)

Bhushan, K.G.; Gupta, S.K.

2006-01-01

DAE Solid State Physics Symposium, sponsored by the Board of Research in Nuclear Sciences, Department of Atomic Energy, is organized annually. The topics covered are phase transitions, soft condensed matter, nano-materials, experimental techniques, instrumentation and solid state devices, superconductivity, magnetism, electronic structure and phonons, semiconductor physics, transport properties, surface - interface and thin films, liquids, glasses and amorphous systems, etc. Papers relevant to INIS are indexed separately

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

Science.gov (United States)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Conductors, semiconductors, superconductors an introduction to solid state physics

CERN Document Server

Huebener, Rudolf P

2016-01-01

This undergraduate textbook provides an introduction to the fundamentals of solid state physics, including a description of the key people in the field and the historic context. The book concentrates on the electric and magnetic properties of materials. It is written for students up to the bachelor level in the fields of physics, materials science, and electric engineering. Because of its vivid explanations and its didactic approach, it can also serve as a motivating pre-stage and supporting companion in the study of the established and more detailed textbooks of solid state physics. The textbook is suitable for a quick repetition prior to examinations. This second edition is extended considerably by detailed mathematical treatments in many chapters, as well as extensive coverage of magnetic impurities.

The Physics of Semiconductors

Science.gov (United States)

Brennan, Kevin F.

1999-02-01

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Solid State Division progress report, September 30, 1981

Energy Technology Data Exchange (ETDEWEB)

1982-04-01

Progress made during the 19 months from March 1, 1980, through September 30, 1981, is reported in the following areas: theoretical solid state physics (surfaces, electronic and magnetic properties, particle-solid interactions, and laser annealing); surface and near-surface properties of solids (plasma materials interactions, ion-solid interactions, pulsed laser annealing, and semiconductor physics and photovoltaic conversion); defects in solids (radiation effects, fracture, and defects and impurities in insulating crystals); transport properties of solids (fast-ion conductors, superconductivity, and physical properties of insulating materials); neutron scattering (small-angle scattering, lattice dynamics, and magnetic properties); crystal growth and characterization (nuclear waste forms, ferroelectric mateirals, high-temperature materials, and special materials); and isotope research materials. Publications and papers are listed. (WHK)

Solid State Division progress report, September 30, 1981

International Nuclear Information System (INIS)

1982-04-01

Progress made during the 19 months from March 1, 1980, through September 30, 1981, is reported in the following areas: theoretical solid state physics (surfaces, electronic and magnetic properties, particle-solid interactions, and laser annealing); surface and near-surface properties of solids (plasma materials interactions, ion-solid interactions, pulsed laser annealing, and semiconductor physics and photovoltaic conversion); defects in solids (radiation effects, fracture, and defects and impurities in insulating crystals); transport properties of solids (fast-ion conductors, superconductivity, and physical properties of insulating materials); neutron scattering (small-angle scattering, lattice dynamics, and magnetic properties); crystal growth and characterization (nuclear waste forms, ferroelectric mateirals, high-temperature materials, and special materials); and isotope research materials. Publications and papers are listed

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

Solid state detectors for neutron radiation monitoring in fusion facilities

International Nuclear Information System (INIS)

Gómez-Ros, J.M.

2014-01-01

The purpose of this communication is to summarize the main solid state based detectors proposed for neutron diagnostic in fusion applications and their applicability under the required harsh conditions in terms of intense radiation, high temperature and available space restrictions. Activation systems, semiconductor based detectors, luminescent materials and Cerenkov fibre optics sensors (C-FOS) are the main devices that are described. - Highlights: • A state-of-the-art summary of solid state based detectors are described. • Conditions and restrictions for their applicability are described. • A list of the 38 more relevant references has been included

Semiconductor materials and their properties

NARCIS (Netherlands)

Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

2017-01-01

Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

Solid-state framing camera with multiple time frames

Energy Technology Data Exchange (ETDEWEB)

Baker, K. L.; Stewart, R. E.; Steele, P. T.; Vernon, S. P.; Hsing, W. W.; Remington, B. A. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

2013-10-07

A high speed solid-state framing camera has been developed which can operate over a wide range of photon energies. This camera measures the two-dimensional spatial profile of the flux incident on a cadmium selenide semiconductor at multiple times. This multi-frame camera has been tested at 3.1 eV and 4.5 keV. The framing camera currently records two frames with a temporal separation between the frames of 5 ps but this separation can be varied between hundreds of femtoseconds up to nanoseconds and the number of frames can be increased by angularly multiplexing the probe beam onto the cadmium selenide semiconductor.

Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

Science.gov (United States)

Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

2013-03-07

In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

Solid-state cavity quantum electrodynamics using quantum dots

International Nuclear Information System (INIS)

Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

2001-01-01

We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

Solid-State Division progress report for period ending March 31, 1983

International Nuclear Information System (INIS)

Green, P.H.; Watson, D.M.

1983-09-01

Progress and activities are reported on: theoretical solid-state physics (surfaces; electronic, vibrational, and magnetic properties; particle-solid interactions; laser annealing), surface and near-surface properties of solids (surface, plasma-material interactions, ion implantation and ion-beam mixing, pulsed-laser and thermal processing), defects in solids (radiation effects, fracture, impurities and defects, semiconductor physics and photovoltaic conversion), transport properties of solids (fast-ion conductors, superconductivity, mass and charge transport in materials), neutron scattering (small-angle scattering, lattice dynamics, magnetic properties, structure and instrumentation), and preparation and characterization of research materials (growth and preparative methods, nuclear waste forms, special materials)

Solid-State Division progress report for period ending March 31, 1983

Energy Technology Data Exchange (ETDEWEB)

Green, P.H.; Watson, D.M. (eds.)

1983-09-01

Progress and activities are reported on: theoretical solid-state physics (surfaces; electronic, vibrational, and magnetic properties; particle-solid interactions; laser annealing), surface and near-surface properties of solids (surface, plasma-material interactions, ion implantation and ion-beam mixing, pulsed-laser and thermal processing), defects in solids (radiation effects, fracture, impurities and defects, semiconductor physics and photovoltaic conversion), transport properties of solids (fast-ion conductors, superconductivity, mass and charge transport in materials), neutron scattering (small-angle scattering, lattice dynamics, magnetic properties, structure and instrumentation), and preparation and characterization of research materials (growth and preparative methods, nuclear waste forms, special materials). (DLC)

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

Science.gov (United States)

Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

2010-02-01

Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

Fast Qualification of Solder Reliability in Solid-state Lighting System

NARCIS (Netherlands)

Zhang, J.

2015-01-01

Solid-state lighting (SSL), which is based 0n semiconductor Lighting Emitting Diode (LED), is the most promising and reliable energy saving solution for future lighting applications. Since a bare LED die can hardly survive without a package, one of the most import function of the LED package is to

Theoretical solid state physics, v.2

CERN Document Server

Haug, Albert

2013-01-01

Theoretical Solid State Physics, Volume 2 deals with the electron-lattice interaction and the effect of lattice imperfections. Conductivity, semiconductors, and luminescence are discussed, with emphasis on the basic physical problems and the various phenomena derived from them. The theoretical basis of interaction between electrons and lattices is considered, along with basic concepts of conduction theory, scattering of electrons by imperfections, and radiationless transitions. This volume is comprised of 19 chapters and begins with an overview of the coupling of electrons and the crystal latt

Wide Bandgap Semiconductor Based Solid State Smart Circuit Protection, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Advanced solid state power component technology is necessary for future hybrid aircraft systems with increased power demands. There is a need for adequate circuit...

Radioactive isotopes in solid-state physics

CERN Document Server

Deicher, M

2002-01-01

Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as M\\"ossbauer spectroscopy, perturbed angular correlation, $\\beta$-NMR, and emission channelling have used nuclear properties (via hyperfine interactions or emitted particles) to gain microscopical information on the structural and dynamical properties of solids. During the last decade, the availability of many different radioactive isotopes as a clean ion beam at ISOL facilities such as ISOLDE at CERN has triggered a new era involving methods sensitive for the optical and electronic properties of solids, especially in the field of semiconductor physics. Extremely sensitive spectroscopic techniques like deep-level transient spectroscopy (DLTS), photoluminescence (PL), and Hall effect have gained a new quality by using radioactive isotopes. Because of their decay the chemical origin of an observed electronic and optical b...

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1989-01-01

The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

Solid-state electronic devices an introduction

CERN Document Server

Papadopoulos, Christo

2014-01-01

A modern and concise treatment of the solid state electronic devices that are fundamental to electronic systems and information technology is provided in this book. The main devices that comprise semiconductor integrated circuits are covered in a clear manner accessible to the wide range of scientific and engineering disciplines that are impacted by this technology. Catering to a wider audience is becoming increasingly important as the field of electronic materials and devices becomes more interdisciplinary, with applications in biology, chemistry and electro-mechanical devices (to name a few) becoming more prevalent. Updated and state-of-the-art advancements are included along with emerging trends in electronic devices and their applications. In addition, an appendix containing the relevant physical background will be included to assist readers from different disciplines and provide a review for those more familiar with the area. Readers of this book can expect to derive a solid foundation for understanding ...

BOOK REVIEW: Solid State Physics: An Introduction

Science.gov (United States)

Jakoby, Bernhard

2009-07-01

There's a wealth of excellent textbooks on solid state physics. The author of the present book is well aware of this fact and does not attempt to write just another one. Rather, he has provided a very compact introduction to solid state physics for third-year students. As we are faced with the continuous appearance interdisciplinary fields and associated study curricula in natural and engineering sciences (biophysics, mechatronics, etc), a compact text in solid state physics would be appreciated by students of these disciplines as well. The book features 11 chapters where each is provided with supplementary discussion questions and problems. The first chapters deal with a review of chemical bonding mechanisms, crystal structures and mechanical properties of solids, which are brief but by no means superficial. The following, somewhat more detailed chapter on thermal properties of lattices includes a nice introduction to phonons. The foundations of solid state electronics are treated in the next three chapters. Here the author first discusses the classical treatment of electronic behaviour in metals (Drude model) and continues with a quantum-theoretical approach starting with the free-electron model and leading to the band structures in conductive solids. The next chapter is devoted to semiconductors and ends with a brief but, with respect to the topical scope, adequate discussion of semiconductor devices. The classical topics of magnetic and dielectric behaviour are treated in the sequel. The book closes with a chapter on superconductivity and a brief chapter covering the modern topics of quantum confinement and aspects of nanoscale physics. In my opinion, the author has succeeded in creating a very concise yet not superficial textbook. The account presented often probes subjects deep enough to lay the basis for a thorough understanding, preparing the reader for more specialized textbooks. For instance, I think that this book may serve as an excellent first

The Physics of Semiconductors An Introduction Including Devices and Nanophysics

CERN Document Server

Grundmann, Marius

2006-01-01

The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

Solid State Physics Principles and Modern Applications

CERN Document Server

Quinn, John J

2009-01-01

Intended for a two semester advanced undergraduate or graduate course in Solid State Physics, this treatment offers modern coverage of the theory and related experiments, including the group theoretical approach to band structures, Moessbauer recoil free fraction, semi-classical electron theory, magnetoconductivity, electron self-energy and Landau theory of Fermi liquid, and both quantum and fractional quantum Hall effects. Integrated throughout are developments from the newest semiconductor devices, e.g. space charge layers, quantum wells and superlattices. The first half includes all material usually covered in the introductory course, but in greater depth than most introductory textbooks. The second half includes most of the important developments in solid-state researches of the past half century, addressing e.g. optical and electronic properties such as collective bulk and surface modes and spectral function of a quasiparticle, which is a basic concept for understanding LEED intensities, X ray fine struc...

Proceedings of the solid state physics symposium. Vol. 34C

International Nuclear Information System (INIS)

1991-12-01

This volume contains the proceedings of the Solid State Physics Symposium held at Varanasi during December 21 to 24, 1991. The topics discussed in the symposium were : (a) Phonon physics, (b) Electron states and electronic properties, (c) Magnetism and magnetic properties, (d) Semiconductor physics, (e) Physics of defects and disordered materials, (f) Transport properties, (g) Superconductivity and superfluidity, (h) Liquid crystals and plastic crystals, (i) Phase transitions and critical phenomena, (j) Surface and interface physics, (k) Non-linear dynamics, instabilities and chaos, (l) Resonance studies and relaxation phenomena, (m) Solid state devices, techniques and instrumentation. Three seminars on topics : (i) High T c superconductors, (ii) Soft matter, and (iii) Physics and technology of interfaces were also held during the symposium. (M.K.V.N.)

Room temperature triplet state spectroscopy of organic semiconductors.

Science.gov (United States)

Reineke, Sebastian; Baldo, Marc A

2014-01-21

Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

Analysis of field usage failure rate data for plastic encapsulated solid state devices

Science.gov (United States)

1981-01-01

Survey and questionnaire techniques were used to gather data from users and manufacturers on the failure rates in the field of plastic encapsulated semiconductors. It was found that such solid state devices are being successfully used by commercial companies which impose certain screening and qualification procedures. The reliability of these semiconductors is now adequate to support their consideration in NASA systems, particularly in low cost systems. The cost of performing necessary screening for NASA applications was assessed.

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Solid state radiation detector system

International Nuclear Information System (INIS)

1977-01-01

A solid state radiation flux detector system utilizes a detector element, consisting of a bar of semiconductor having electrical conductance of magnitude dependent upon the magnitude of photon and charged particle flux impinging thereon, and negative feedback circuitry for adjusting the current flow through a light emitting diode to facilitate the addition of optical flux, having a magnitude decreasing in proportion to any increase in the magnitude of radiation (e.g. x-ray) flux incident upon the detector element, whereby the conductance of the detector element is maintained essentially constant. The light emitting diode also illuminates a photodiode to generate a detector output having a stable, highly linear response with time and incident radiation flux changes

Nanoengineering for solid-state lighting.

Energy Technology Data Exchange (ETDEWEB)

Schubert, E. Fred (Rensselaer Polytechnic Institute,Troy, NY); Koleske, Daniel David; Wetzel, Christian (Rensselaer Polytechnic Institute,Troy, NY); Lee, Stephen Roger; Missert, Nancy A.; Lin, Shawn-Yu (Rensselaer Polytechnic Institute,Troy, NY); Crawford, Mary Hagerott; Fischer, Arthur Joseph

2009-09-01

This report summarizes results from a 3-year Laboratory Directed Research and Development project performed in collaboration with researchers at Rensselaer Polytechnic Institute. Our collaborative effort was supported by Sandia's National Institute for Nanoengineering and focused on the study and application of nanoscience and nanoengineering concepts to improve the efficiency of semiconductor light-emitting diodes for solid-state lighting applications. The project explored LED efficiency advances with two primary thrusts: (1) the study of nanoscale InGaN materials properties, particularly nanoscale crystalline defects, and their impact on internal quantum efficiency, and (2) nanoscale engineering of dielectric and metal materials and integration with LED heterostructures for enhanced light extraction efficiency.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Muonium states in semiconductors

International Nuclear Information System (INIS)

Patterson, B.D.

1987-01-01

There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 2. Abstracts

International Nuclear Information System (INIS)

Machulin, V.F.

2009-01-01

The materials reflect the content of the conference papers, in which the novel results, state and perspectives of research in the field of semiconductor physics, electronic or phonon phenomena on the surface and in bulk semiconductors, nano- and quantum dimensional structures, physics of modern solid state devices, semiconductor materials and technologies are presented.

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-03-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting

KAUST Repository

Gasim, Anwar A.

2012-01-01

InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results

Solid-Phase Immunoassay of Polystyrene-Encapsulated Semiconductor Coreshells for Cardiac Marker Detection

Directory of Open Access Journals (Sweden)

Sanghee Kim

2012-01-01

Full Text Available A solid-phase immunoassay of polystyrene-encapsulated semiconductor nanoparticles was demonstrated for cardiac troponin I (cTnI detection. CdSe/ZnS coreshells were encapsulated with a carboxyl-functionalized polystyrene nanoparticle to capture the target antibody through a covalent bonding and to eliminate the photoblinking and toxicity of semiconductor luminescent immunosensor. The polystyrene-encapsulated CdSe/ZnS fluorophores on surface-modified glass chip identified cTnI antigens at the level of ~ng/mL. It was an initial demonstration of diagnostic chip for monitoring a cardiovascular disease.

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Laser cooling of solids

Energy Technology Data Exchange (ETDEWEB)

Epstein, Richard I [Los Alamos National Laboratory; Sheik-bahae, Mansoor [UNM

2008-01-01

We present an overview of solid-state optical refrigeration also known as laser cooling in solids by fluorescence upconversion. The idea of cooling a solid-state optical material by simply shining a laser beam onto it may sound counter intuitive but is rapidly becoming a promising technology for future cryocooler. We chart the evolution of this science in rare-earth doped solids and semiconductors.

Introduction to Semiconductor Devices

Science.gov (United States)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Solid-state reactions to synthesize nanostructured lead selenide semiconductor powders by high-energy milling

Energy Technology Data Exchange (ETDEWEB)

Rojas-Chavez, H., E-mail: uu_gg_oo@yahoo.com.mx [Centro de Investigacion e Innovacion Tecnologica - IPN, Cerrada de CECATI s/n, Col. Santa Catarina, Del. Azcapotzalco (Mexico) and Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada - IPN, Legaria 694, Col. Irrigacion, Del. Miguel Hidalgo (Mexico); Reyes-Carmona, F. [Facultad de Quimica - UNAM, Circuito de la Investigacion Cientifica s/n, C.U. Del. Coyoacan (Mexico); Jaramillo-Vigueras, D. [Centro de Investigacion e Innovacion Tecnologica - IPN, Cerrada de CECATI s/n, Col. Santa Catarina, Del. Azcapotzalco (Mexico)

2011-10-15

Highlights: {yields} PbSe synthesized from PbO instead of Pb powder do not require an inert atmosphere. {yields} During high-energy milling oxygen has to be chemically reduced from the lead oxide. {yields} Solid-state and solid-gas chemical reactions promote both solid and gaseous products. -- Abstract: Both solid-solid and gas-solid reactions have been traced during high-energy milling of Se and PbO powders under vial (P, T) conditions in order to synthesize the PbSe phase. Chemical and thermodynamic arguments are postulated to discern the high-energy milling mechanism to transform PbO-Se micropowders onto PbSe-nanocrystals. A set of reactions were evaluated at around room temperature. Therefore an experimental campaign was designed to test the nature of reactions in the PbO-Se system during high-energy milling.

Solid-state reactions to synthesize nanostructured lead selenide semiconductor powders by high-energy milling

International Nuclear Information System (INIS)

Rojas-Chavez, H.; Reyes-Carmona, F.; Jaramillo-Vigueras, D.

2011-01-01

Highlights: → PbSe synthesized from PbO instead of Pb powder do not require an inert atmosphere. → During high-energy milling oxygen has to be chemically reduced from the lead oxide. → Solid-state and solid-gas chemical reactions promote both solid and gaseous products. -- Abstract: Both solid-solid and gas-solid reactions have been traced during high-energy milling of Se and PbO powders under vial (P, T) conditions in order to synthesize the PbSe phase. Chemical and thermodynamic arguments are postulated to discern the high-energy milling mechanism to transform PbO-Se micropowders onto PbSe-nanocrystals. A set of reactions were evaluated at around room temperature. Therefore an experimental campaign was designed to test the nature of reactions in the PbO-Se system during high-energy milling.

Semiconductor detector physics

International Nuclear Information System (INIS)

Equer, B.

1987-01-01

Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Solid state physics

CERN Document Server

Burns, Gerald

2013-01-01

Solid State Physics, International Edition covers the fundamentals and the advanced concepts of solid state physics. The book is comprised of 18 chapters that tackle a specific aspect of solid state physics. Chapters 1 to 3 discuss the symmetry aspects of crystalline solids, while Chapter 4 covers the application of X-rays in solid state science. Chapter 5 deals with the anisotropic character of crystals. Chapters 6 to 8 talk about the five common types of bonding in solids, while Chapters 9 and 10 cover the free electron theory and band theory. Chapters 11 and 12 discuss the effects of moveme

Origin and role of gap states in organic semiconductor studied by UPS: as the nature of organic molecular crystals

International Nuclear Information System (INIS)

Yang, Jin-Peng; Bussolotti, Fabio; Kera, Satoshi; Ueno, Nobuo

2017-01-01

This article reviews experimental studies on ‘bridging electronic structure and charge transport property of organic semiconductors’ performed using ultraviolet photoelectron spectroscopy (UPS) and related methods mainly in Chiba University, Japan, in particular on the investigation of the origin and the role of electronic states existing in the highest occupied molecular orbital band–lowest unoccupied molecular orbital band (HOMO–LUMO) gap. We summarize experimental observations including direct measurements of ‘invisible’ gap states with ultrahigh sensitivity UPS, which demonstrate that there exist intrinsic gap states in organic semiconductors. We firstly describe the nature of organic molecular solids to understand features of organic semiconductors because such intrinsic gap states are a result of the interplay of these features, which give the principal difference between the organic semiconductor and inorganic counterpart. We then discuss (i) the origin and role of the band gap states in relation to intermolecular interaction/band dispersion and electron–phonon coupling, (ii) the Fermi level pinning issue in organic semiconductors, and (iii) the method of computing the Fermi level position within the HOMO–LUMO gap for experimental groups. The gap states of organic semiconductors appear easily when a weak perturbation is applied to the organic system, namely by contact with other material, by injecting a charge, by elevating temperature, and by exposure to 1 atm gas. What we finally found is that tailing states of HOMO and LUMO always exist, and their energy distributions must not be symmetric; they thus produce a larger Fermi level shift from the mid gap position than previously thought. Furthermore, as shown by computational work, Fermi level pinning , which is a well-known phenomena in semiconductor devices field, occurs in weakly interacting organic/conductor systems without any gap states if the system temperature is not zero ( T �

Origin and role of gap states in organic semiconductor studied by UPS: as the nature of organic molecular crystals

Science.gov (United States)

Yang, Jin-Peng; Bussolotti, Fabio; Kera, Satoshi; Ueno, Nobuo

2017-10-01

This article reviews experimental studies on ‘bridging electronic structure and charge transport property of organic semiconductors’ performed using ultraviolet photoelectron spectroscopy (UPS) and related methods mainly in Chiba University, Japan, in particular on the investigation of the origin and the role of electronic states existing in the highest occupied molecular orbital band-lowest unoccupied molecular orbital band (HOMO-LUMO) gap. We summarize experimental observations including direct measurements of ‘invisible’ gap states with ultrahigh sensitivity UPS, which demonstrate that there exist intrinsic gap states in organic semiconductors. We firstly describe the nature of organic molecular solids to understand features of organic semiconductors because such intrinsic gap states are a result of the interplay of these features, which give the principal difference between the organic semiconductor and inorganic counterpart. We then discuss (i) the origin and role of the band gap states in relation to intermolecular interaction/band dispersion and electron-phonon coupling, (ii) the Fermi level pinning issue in organic semiconductors, and (iii) the method of computing the Fermi level position within the HOMO-LUMO gap for experimental groups. The gap states of organic semiconductors appear easily when a weak perturbation is applied to the organic system, namely by contact with other material, by injecting a charge, by elevating temperature, and by exposure to 1 atm gas. What we finally found is that tailing states of HOMO and LUMO always exist, and their energy distributions must not be symmetric; they thus produce a larger Fermi level shift from the mid gap position than previously thought. Furthermore, as shown by computational work, Fermi level pinning, which is a well-known phenomena in semiconductor devices field, occurs in weakly interacting organic/conductor systems without any gap states if the system temperature is not zero (T  >  0). We

ON THE ARTIFICIAL SEMICONDUCTOR MATERIALS | Adelabu ...

African Journals Online (AJOL)

For about the last three decades, semiconductor technology began to make its most apparent impact in Solid State Electronics. The field of photonics, which combines laser physics, electro-optics and nonlinear optics has expanded tremendously. Notably, modern light wave communications exemplify photonic systems.

Construction of a Solid State Research Facility, Building 3150

International Nuclear Information System (INIS)

1993-07-01

The Department of Energy (DOE) proposes to construct a new facility to house the Materials Synthesis Group (MSG) and the Semiconductor Physics Group (SPG) of the Solid State Division, Oak Ridge National Laboratory (ORNL). The location of the proposed action is Roane County, Tennessee. MSG is involved in the study of crystal growth and the preparation and characterization of advanced materials, such as high-temperature superconductors, while SPG is involved in semiconductor physics research. All MSG and a major pardon of SPG research activities are now conducted in Building 2000, a deteriorating structure constructed in the 1940. The physical deterioration of the roof; the heating, ventilation, and air conditioning (HVAC) system; and the plumbing make this building inadequate for supporting research activities. The proposed project is needed to provide laboratory and office space for MSG and SPG and to ensure that research activities can continue without interruption due to deficiencies in the building and its associated utility systems

Solid state photon upconversion utilizing thermally activated delayed fluorescence molecules as triplet sensitizer

Energy Technology Data Exchange (ETDEWEB)

Wu, Tony C.; Congreve, Daniel N.; Baldo, Marc A., E-mail: baldo@mit.edu [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-07-20

The ability to upconvert light is useful for a range of applications, from biological imaging to solar cells. But modern technologies have struggled to upconvert incoherent incident light at low intensities. Here, we report solid state photon upconversion employing triplet-triplet exciton annihilation in an organic semiconductor, sensitized by a thermally activated-delayed fluorescence (TADF) dye. Compared to conventional phosphorescent sensitizers, the TADF dye maximizes the wavelength shift in upconversion due to its small singlet-triplet splitting. The efficiency of energy transfer from the TADF dye is 9.1%, and the conversion yield of sensitizer exciton pairs to singlet excitons in the annihilator is 1.1%. Our results demonstrate upconversion in solid state geometries and with non-heavy metal-based sensitizer materials.

A Solid State Pyranometer

Directory of Open Access Journals (Sweden)

Dumitrescu Anca Laura

2015-12-01

Full Text Available The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black, is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03, indicates a good linearity.

A Solid State Pyranometer

Science.gov (United States)

Dumitrescu, Anca Laura; Paulescu, Marius; Ercuta, Aurel

2015-12-01

The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

Solid State Division

International Nuclear Information System (INIS)

Green, P.H.; Watson, D.M.

1989-08-01

This report contains brief discussions on work done in the Solid State Division of Oak Ridge National Laboratory. The topics covered are: Theoretical Solid State Physics; Neutron scattering; Physical properties of materials; The synthesis and characterization of materials; Ion beam and laser processing; and Structure of solids and surfaces

Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

Energy Technology Data Exchange (ETDEWEB)

Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-08-09

This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm² of active detector area.

Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.

Science.gov (United States)

Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C

2013-10-09

In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.

Solid State Division

Energy Technology Data Exchange (ETDEWEB)

Green, P.H.; Watson, D.M. (eds.)

1989-08-01

This report contains brief discussions on work done in the Solid State Division of Oak Ridge National Laboratory. The topics covered are: Theoretical Solid State Physics; Neutron scattering; Physical properties of materials; The synthesis and characterization of materials; Ion beam and laser processing; and Structure of solids and surfaces. (LSP)

Reliability analysis of component-level redundant topologies for solid-state fault current limiter

Science.gov (United States)

Farhadi, Masoud; Abapour, Mehdi; Mohammadi-Ivatloo, Behnam

2018-04-01

Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible configurations for the redundant design in component level. This article presents a comparative reliability analysis between different component-level redundant designs for solid-state fault current limiter. The aim of the proposed analysis is to determine the more reliable component-level redundant configuration. The mean time to failure (MTTF) is used as the reliability parameter. Considering both fault types (open circuit and short circuit), the MTTFs of different configurations are calculated. It is demonstrated that more reliable configuration depends on the junction temperature of the semiconductor switches in the steady state. That junction temperature is a function of (i) ambient temperature, (ii) power loss of the semiconductor switch and (iii) thermal resistance of heat sink. Also, results' sensitivity to each parameter is investigated. The results show that in different conditions, various configurations have higher reliability. The experimental results are presented to clarify the theory and feasibility of the proposed approaches. At last, levelised costs of different configurations are analysed for a fair comparison.

Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets.

Science.gov (United States)

Nikoobakht, Babak; Herzing, Andrew; Muramoto, Shin; Tersoff, Jerry

2015-12-09

We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when heated in the presence of water vapor. As they move, the particles etch crystallographically aligned grooves into the surface. We show that this process is a negative analogue of the vapor-liquid-solid (VLS) growth of semiconductor nanowires: the semiconductor dissolves into the catalyst and reacts with water vapor at the catalyst surface to create volatile oxides, depleting the dissolved cations and anions and thus sustaining the dissolution process. This VLS etching process provides a new tool for directed assembly of structures with sublithographic dimensions, as small as a few nanometers in diameter. Au particles above 100 nm in size do not exhibit this process but remain stationary, with oxide accumulating around the particles.

Density-dependent phonoriton states in highly excited semiconductors

International Nuclear Information System (INIS)

Nguyen Hong Quang; Nguyen Minh Khue; Nguyen Que Huong

1995-09-01

The dynamical aspects of the phonoriton state in highly-photoexcited semiconductors is studied theoretically. The effect of the exciton-exciton interaction and nonbosonic character of high-density excitons are taken into account. Using Green's function method and within the Random Phase Approximation it is shown that the phonoriton dispersion and damping are very sensitive to the exciton density, characterizing the excitation degree of semiconductors. (author). 18 refs, 3 figs

Solid state laser driver for an ICF reactor

International Nuclear Information System (INIS)

Krupke, W.F.

1988-01-01

A conceptual design is presented of the main power amplifier of a multi-beamline, multi-megawatt solid state ICF reactor driver. Simultaneous achievement of useful beam quality and high average power is achieved by a proper choice of amplifier geometry. An amplifier beamline consists of a sequence of face-pumped rectangular slab gain elements, oriented at the Brewster angle relative to the beamline axis, and cooled on their large faces by helium gas that is flowing subsonically. The infrared amplifier output radiation is shifted to an appropriately short wavelength ( 10% (including all flow cooling input power) when the amplifiers are pumped by efficient high-power AlGaAs semiconductor laser diode arrays. 11 refs., 3 figs., 7 tabs

Solid state physics advances in research and applications

CERN Document Server

Turnbull, David

1991-01-01

The explosion of the science of mesoscopic structures is having a great impact on physics and electrical engineering because of the possible applications of these structures in microelectronic and optoelectronic devices of the future. This volume of Solid State Physics consists of two comprehensive and authoritative articles that discuss most of the physical problems that have so far been identified as being of importance in semiconductor nanostructures. Much of the volume is tutorial in characture--while at the same time time presenting current and vital theoretical and experimental results and a copious reference list--so it will be essential reading to all those taking a part in the research and development of this emerging technology.

Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

International Nuclear Information System (INIS)

Krivoruchko, V.N.

1996-01-01

The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

Theoretical solid state physics

CERN Document Server

Haug, Albert

2013-01-01

Theoretical Solid State Physics, Volume 1 focuses on the study of solid state physics. The volume first takes a look at the basic concepts and structures of solid state physics, including potential energies of solids, concept and classification of solids, and crystal structure. The book then explains single-electron approximation wherein the methods for calculating energy bands; electron in the field of crystal atoms; laws of motion of the electrons in solids; and electron statistics are discussed. The text describes general forms of solutions and relationships, including collective electron i

Solid-state lighting: 'The case' 10 years after and future prospects

Energy Technology Data Exchange (ETDEWEB)

Haitz, Roland [Adair Lane, Portola Valley, CA 94028 (United States); Tsao, Jeffrey Y. [Physical, Chemical and Nano Sciences Center, Sandia National Laboratories, Albuquerque NM 87185 (United States)

2011-01-15

Ten years ago, a white paper titled ''The Case for a National Research Program on Semiconductor Lighting'' outlined the promise and potential of semiconductor light-emitting diodes (LEDs) for general illumination. Since then, investments in the now-renamed field of solid-state lighting (SSL) have accelerated and considerable progress has been made, not always in the directions envisioned at the time. In this paper, two of the original four authors comment on the white paper's hits and misses, while making the original white paper available archivally as supplemental online material. Finally, we make new predictions for the coming 10-20 years. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

Directory of Open Access Journals (Sweden)

Shinji Yasui

2012-01-01

Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

Semiconductor statistics

CERN Document Server

Blakemore, J S

1962-01-01

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

Carrier scattering in metals and semiconductors

CERN Document Server

Gantmakher, VF

1987-01-01

The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

Proceedings of Republic conference (with participation of scientists from Commonwealth of Independent States countries) 'Modern problems of semiconductor physics', dedicated for twentieth anniversary of independence of Republic Uzbekistan

International Nuclear Information System (INIS)

Matchanov, A.T.; Tagaev, M.B.; Ismaylov, K.A.

2011-11-01

Republic conference with participation of scientists from Commonwealth of Independent States countries 'Modern problems of semiconductor physics', dedicated for twentieth anniversary of independence of Republic Uzbekistan was held on 23-25 November, 2011 in Nukus, Uzbekistan. Specialists and young scientists from universities and academic research institutes discussed various aspects of modern problems of semiconductor physics. More than 100 talks were presented in the meeting on the following subjects: solid state physics, physics of condensed matter and nano materials; educational tools and information technologies. (K.M.)

The future of diode pumped solid state lasers and their applicability to the automotive industry

Science.gov (United States)

Solarz, R.; Beach, R.; Hackel, L.

1994-03-01

The largest commercial application of high power lasers is for cutting and welding. Their ability to increase productivity by introducing processing flexibility and integrated automation into the fabrication process is well demonstrated. This paper addresses the potential importance of recent developments in laser technology to further impact their use within the automotive industry. The laser technology we will concentrate upon is diode laser technology and diode-pumped solid-state laser technology. We will review present device performance and cost and make projections for the future in these areas. Semiconductor laser arrays have matured dramatically over the last several years. They are lasers of unparalleled efficiency (greater than 50%), reliability (greater than 10,000 hours of continuous operation), and offer the potential of dramatic cost reductions (less than a dollar per watt). They can be used directly in many applications or can be used to pump solid-state lasers. When used as solid-state laser pump arrays, they simultaneously improve overall laser efficiency, reduce size, and improve reliability.

Solid state radiation dosimetry

International Nuclear Information System (INIS)

Moran, P.R.

1976-01-01

Important recent developments provide accurate, sensitive, and reliable radiation measurements by using solid state radiation dosimetry methods. A review of the basic phenomena, devices, practical limitations, and categories of solid state methods is presented. The primary focus is upon the general physics underlying radiation measurements with solid state devices

Luminescence and the solid state

CERN Document Server

Ropp, Richard C

2013-01-01

Since the discovery of the transistor in 1948, the study of the solid state has been burgeoning. Recently, cold fusion and the ceramic superconductor have given cause for excitement. There are two approaches possible to this area of science, namely, that of solid state physics and solid state chemistry, although both overlap extensively. The former is more concerned with electronic states in solids (including electromagnetics) whereas the latter is more concerned with interactions of atoms in solids. The area of solid state physics is well documented, however, there are very few texts which de

Semiconductor physics an introduction

CERN Document Server

Seeger, Karlheinz

1999-01-01

Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

Solid state video cameras

CERN Document Server

Cristol, Y

2013-01-01

Solid State Video Cameras reviews the state of the art in the field of solid-state television cameras as compiled from patent literature. Organized into 10 chapters, the book begins with the basic array types of solid-state imagers and appropriate read-out circuits and methods. Documents relating to improvement of picture quality, such as spurious signal suppression, uniformity correction, or resolution enhancement, are also cited. The last part considerssolid-state color cameras.

Tunneling spectroscopy on semiconductors with a low surface state density

OpenAIRE

Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

1997-01-01

A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

Metastable states in amorphous chalcogenide semiconductors

CERN Document Server

Mikla, Victor I

2009-01-01

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

33rd International Conference on the Physics of Semiconductors

International Nuclear Information System (INIS)

2017-01-01

Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)

Laser cooling of solids

CERN Document Server

Petrushkin, S V

2009-01-01

Laser cooling is an important emerging technology in such areas as the cooling of semiconductors. The book examines and suggests solutions for a range of problems in the development of miniature solid-state laser refrigerators, self-cooling solid-state lasers and optical echo-processors. It begins by looking at the basic theory of laser cooling before considering such topics as self-cooling of active elements of solid-state lasers, laser cooling of solid-state information media of optical echo-processors, and problems of cooling solid-state quantum processors. Laser Cooling of Solids is an important contribution to the development of compact laser-powered cryogenic refrigerators, both for the academic community and those in the microelectronics and other industries. Provides a timely review of this promising field of research and discusses the fundamentals and theory of laser cooling Particular attention is given to the physics of cooling processes and the mathematical description of these processes Reviews p...

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Thienoacene-based organic semiconductors.

Science.gov (United States)

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

Science.gov (United States)

Lim, Heuijin; Hyeok Jeong, Dong; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-04-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun.

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

International Nuclear Information System (INIS)

Lim, Heuijin; Jeong, Dong Hyeok; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-01-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

Science.gov (United States)

Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

1993-01-01

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

A new polarimeter scheme based on solid state semiconductors Un nuevo esquema para polarímetros basado en semiconductor de estado sólido

Directory of Open Access Journals (Sweden)

Heiner Castro Gutierrez

2012-12-01

Full Text Available A new kind of polarimeter scheme is suggested using solid state semiconductors. The new approach is based on the modulation over the intensities of the diffracted beams through a two-dimensional chiral grating, reported recently. It will be demonstrated that at least four intensity measurements of no equivalent diffracted beams are needed in order to estimate the polarization state of the incident beam. The incident beam azimuth was varied by routing a linear polarizer lens mounting in a stepped motor. The intensities of four diffracted beams were measured using a screen, a CCD camera and some algorithms running in a computer. The LabVIEW development environment software was used for controlling the hardware and for presenting the results. MATLAB© was used for calculating the intensities of the diffracted beams and computing the azimuth of the incident beam. Although both the azimuth and ellipticity should be estimated, the experiments show that only the azimuth estimation yields accurate results. The ellipticity cannot be estimated with precision. The error on the azimuth estimation depends on the variation in the power of the incident beam. It was found that the azimuth estimation is accurate between [0,140 and (150,180] degrees. The cause of huge errors in the azimuth found between 140 and 150 degrees are kept unknown.Un nuevo esquema de polarímetro es sugerido usando semiconductores de estado sólido. La nueva aproximación está basada en la modulación sobre las intensidades de los rayos difractados a través de una rejilla quiral de dos dimensiones reportado recientemente. Será demostrado que al menos cuatro mediciones de intensidades de rayos difractados no equivalentes son necesarios para estimar el estado de polarización del rayo incidente. El azimut del rayo incidente es variado, rotando un lente polarizador lineal montado en un motor paso a paso. La intensidad de cuatro rayos difractados es medida por medio de una peque

Fabrication and application of amorphous semiconductor devices

International Nuclear Information System (INIS)

Kumurdjian, Pierre.

1976-01-01

This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

"Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

Science.gov (United States)

Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

2013-12-03

Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature dependent electronic conduction in semiconductors

International Nuclear Information System (INIS)

Roberts, G.G.; Munn, R.W.

1980-01-01

This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

Solid-state laser engineering

CERN Document Server

Koechner, Walter

1999-01-01

Solid-State Laser Engineering, written from an industrial perspective, discusses in detail the characteristics, design, construction, and performance of solid-state lasers. Emphasis is placed on engineering and practical considerations; phenomenological aspects using models are preferred to abstract mathematical derivations. This new edition has extensively been updated to account for recent developments in the areas of diode-laser pumping, laser materials, and nonlinear crystals. Walter Koechner received a doctorate in Electrical Engineering from the University of Technology in Vienna, Austria, in 1965. He has published numerous papers in the fields of solid-state physics, optics, and lasers. Dr. Koechner is founder and president of Fibertek, Inc., a research firm specializing in the design, development, and production of advanced solid-state lasers, optical radars, and remote-sensing systems.

Rubrene: The interplay between intramolecular and intermolecular interactions determines the planarization of its tetracene core in the solid state

KAUST Repository

Sutton, Christopher

2015-06-15

Rubrene is one of the most studied molecular semiconductors; its chemical structure consists of a tetracene backbone with four phenyl rings appended to the two central fused rings. Derivatization of these phenyl rings can lead to two very different solid-state molecular conformations and packings: One in which the tetracene core is planar and there exists substantive overlap among neighboring π-conjugated backbones; and another where the tetracene core is twisted and the overlap of neighboring π-conjugated backbones is completely disrupted. State-of-the-art electronic-structure calculations show for all isolated rubrene derivatives that the twisted conformation is more favorable (by -1.7 to -4.1 kcal mol-1), which is a consequence of energetically unfavorable exchange-repulsion interactions among the phenyl side groups. Calculations based on available crystallographic structures reveal that planar conformations of the tetracene core in the solid state result from intermolecular interactions that can be tuned through well-chosen functionalization of the phenyl side groups, and lead to improved intermolecular electronic couplings. Understanding the interplay of these intramolecular and intermolecular interactions provides insight into how to chemically modify rubrene and similar molecular semiconductors to improve the intrinsic materials electronic properties.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Understanding solid state physics

CERN Document Server

Holgate, Sharon Ann

2009-01-01

Where Sharon Ann Holgate has succeeded in this book is in packing it with examples of the application of solid state physics to technology. … All the basic elements of solid state physics are covered … . The range of materials is good, including as it does polymers and glasses as well as crystalline solids. In general, the style makes for easy reading. … Overall this book succeeds in showing the relevance of solid state physics to the modern world … .-Contemporary Physics, Vol. 52, No. 2, 2011I was indeed amused and inspired by the wonderful images throughout the book, carefully selected by th

Solid-state laser engineering

CERN Document Server

Koechner, Walter

1996-01-01

Solid-State Laser Engineering, written from an industrial perspective, discusses in detail the characteristics, design, construction, and performance of solid-state lasers. Emphasis is placed on engineering and practical considerations; phenomenological aspects using models are preferred to abstract mathematical derivations. This new edition has extensively been updated to account for recent developments in the areas of diode-laser pumping, mode locking, ultrashort-pulse generation etc. Walter Koechner received a doctorate in Electrical Engineering from the University of Technology in Vienna, Austria, in 1965. He has published numerous papers in the fields of solid-state physics, optics, and lasers. Dr. Koechner is founder and president of Fibertek, Inc., a research firm specializing in the design, development, and production of advanced solid-state lasers, optical radars, and remote-sensing systems.

Solid state chemistry an introduction

CERN Document Server

Smart, Lesley E

2012-01-01

""Smart and Moore are engaging writers, providing clear explanations for concepts in solid-state chemistry from the atomic/molecular perspective. The fourth edition is a welcome addition to my bookshelves. … What I like most about Solid State Chemistry is that it gives simple clear descriptions for a large number of interesting materials and correspondingly clear explanations of their applications. Solid State Chemistry could be used for a solid state textbook at the third or fourth year undergraduate level, especially for chemistry programs. It is also a useful resource for beginning graduate

Sources of series resistance in the Harwell solid state alpha detector

International Nuclear Information System (INIS)

Rawlings, K.J.

1985-12-01

The metal-semiconductor contacts to the Harwell solid state alpha detector have been characterized and the effect of the contact geometry has been assessed. To a reasonable approximation the latter gives rise to an emitter series resistance with an expected range of 20 +- 8 ohms. The contacts behave like parallel RC networks which become noticeably frequency dependent above ca. 100 kHz. Up to this frequency the emitter contact is likely to add 6 +- 4 ohms to the series resistance and the contribution from the base contact varies inversely with the square of the diode's diameter, being 5 +- 3 ohms for a diode with a diameter of 30 mm. (author)

The solid state maser

CERN Document Server

Orton, J W; Walling, J C; Ter Haar, D

1970-01-01

The Solid State Maser presents readings related to solid state maser amplifier from the first tentative theoretical proposals that appeared in the early 1950s to the successful realization of practical devices and their application to satellite communications and radio astronomy almost exactly 10 years later. The book discusses a historical account of the early developments (including that of the ammonia maser) of solid state maser; the properties of paramagnetic ions in crystals; the development of practical low noise amplifiers; and the characteristics of maser devices designed for communica

Solid state chemistry and its applications

CERN Document Server

West, Anthony R

2013-01-01

Solid State Chemistry and its Applications, 2nd Edition: Student Edition is an extensive update and sequel to the bestselling textbook Basic Solid State Chemistry, the classic text for undergraduate teaching in solid state chemistry worldwide. Solid state chemistry lies at the heart of many significant scientific advances from recent decades, including the discovery of high-temperature superconductors, new forms of carbon and countless other developments in the synthesis, characterisation and applications of inorganic materials. Looking forward, solid state chemistry will be crucial for the

Survey of semiconductor physics

CERN Document Server

Böer, Karl W

1992-01-01

Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

Semiconductor terahertz technology devices and systems at room temperature operation

CERN Document Server

Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

2015-01-01

Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

On genealogy of defect electron states in semiconductor materials

International Nuclear Information System (INIS)

Makhmudov, A.Sh.

1984-01-01

Main factors of formation of defect electron structure in semiconductors are considered. It is concluded on the basis of analysis of papers published earlier that it is necessary to take account of two factors: long- and short-range orders i.e. the nature of the atom interaction with the several nearest neighbours as well as crystal periodicity, correctly formulated boundary conditions. One of possible wayes of the given task realization is the combination of a traditional scheme of the solid body theory- the Green function method and the semiempirical quantum-chemical method of equivalent orbitales

The physics of semiconductors an introduction including nanophysics and applications

CERN Document Server

Grundmann, Marius

2016-01-01

The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Photoluminescence study in solid solutions of CdMgMnTe semimagnetic semiconductors

International Nuclear Information System (INIS)

Kusraev, Yu.G.; Averkieva, G.K.

1993-01-01

Luminescence and resonant Raman scattering in quaternary solid solutions of CdMgMnTe semimagnetic semiconductors are investigated. It is shown that the intensity and position of the luminescence band, conditioned by the 4 T 1 --> 6 A 1 optical transitions in the Mn d-shell, depend on the local crystal environment. Temperature variations of the photoluminescence spectra are interpreted on the base of a model of electron excitation energy transport from Mn 2+ to different recombination centers. In the resonant Raman scattering spectrum were observed three longitudinal vibrational modes with energies near to phonon energies of corresponding binary compounds

Einstein and solid-state physics

International Nuclear Information System (INIS)

Aut, I.

1982-01-01

A connection between the development of solid-state physics and the works and activity of Albert Einstein is traced. A tremendous Einstein contribution to solid state physics is marked. A strict establishment of particle-wave dualism; a conclusion about the applicability of the Plank radiation law not only to black body radiation; finding out particles indistinguishability - all three discoveries have a principle significance for solid state physics too

Exciton fission in monolayer transition metal dichalcogenide semiconductors.

Science.gov (United States)

Steinhoff, A; Florian, M; Rösner, M; Schönhoff, G; Wehling, T O; Jahnke, F

2017-10-27

When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a plasma of unbound fermionic particles or a gas of composite bosons called excitons. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states. Using state-of-the-art many-body theory, we show that the thermodynamic fission-fusion balance of excitons and electron-hole plasma can be efficiently tuned via the dielectric environment as well as charge carrier doping. We propose the observation of these effects by studying exciton satellites in photoemission and tunneling spectroscopy, which present direct solid-state counterparts of high-energy collider experiments on the induced fission of composite particles.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Recombination barrier layers in solid-state quantum dot-sensitized solar cells

KAUST Repository

Roelofs, Katherine E.

2012-06-01

By replacing the dye in the dye-sensitized solar cell design with semiconductor quantum dots as the light-absorbing material, solid-state quantum dot-sensitized solar cells (ss-QDSSCs) were fabricated. Cadmium sulfide quantum dots (QDs) were grown in situ by successive ion layer adsorption and reaction (SILAR). Aluminum oxide recombination barrier layers were deposited by atomic layer deposition (ALD) at the TiO2/hole-conductor interface. For low numbers of ALD cycles, the Al2O3 barrier layer increased open circuit voltage, causing an increase in device efficiency. For thicker Al2O3 barrier layers, photocurrent decreased substantially, leading to a decrease in device efficiency. © 2012 IEEE.

Development of a prototype solid state fault current limiting and interrupting device for low voltage distribution networks.

OpenAIRE

Ahmed, M.; Putrus, G. A.; Ran, L.; Penlington, R.

2006-01-01

This paper describes the development of a solid-state Fault Current Limiting and Interrupting Device (FCLID) suitable for low voltage distribution networks. The main components of the FCLID are a bidirectional semiconductor switch that can disrupt the short-circuit current, and a voltage clamping element that helps in controlling the current and absorbing the inductive energy stored in the network during current interruption. Using a hysteresis type control algorithm, the short-circuit curren...

The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions

International Nuclear Information System (INIS)

Brus, V V

2013-01-01

A quantitative analysis of the impedance spectroscopy of semiconductor heterojunctions was carried out in the presence of interface state continuum at the heterojunction interface. A comparison of the impedance spectroscopy of semiconductor heterojunctions simulated in the context of the interface state continuum model with that simulated in the scope of the single-level state model was carried and possible misinterpretations were considered. The previously proposed approaches for the determination of the interface-state-related parameters and for the calculation of the actual barrier capacitance (the single-level state model) were modified in order to take into account the effect of interface state continuum. (paper)

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

New materials for solid state electrochemistry

International Nuclear Information System (INIS)

Ferloni, P.; Consiglio Nazionale delle Ricerche, Pavia; Magistris, A.; Consiglio Nazionale delle Ricerche, Pavia

1994-01-01

Solid state electrochemistry is an interdisciplinary area, undergoing nowadays a fast development. It is related on the one hand to chemistry, and on the other hand to crystallography, solid state physics and materials science. In this paper structural and electrical properties of some families of new materials interesting for solid state electrochemistry are reviewed. Attention is focused essentially on ceramic and crystalline materials, glasses and polymers, displaying high ionic conductivity and potentially suitable for various applications in solid state electrochemical devices. (orig.)

Theoretical solid state physics

International Nuclear Information System (INIS)

Anon.

1977-01-01

Research activities at ORNL in theoretical solid state physics are described. Topics covered include: surface studies; particle-solid interactions; electronic and magnetic properties; and lattice dynamics

Neutron and gamma irradiation effects on power semiconductor switches

International Nuclear Information System (INIS)

Schwarze, G.E.; Frasca, A.J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

Solid-State Physics Introduction to the Theory

CERN Document Server

Patterson, James

2010-01-01

Learning Solid State Physics involves a certain degree of maturity, since it involves tying together diverse concepts from many areas of physics. The objective is to understand, in a basic way, how solid materials behave. To do this one needs both a good physical and mathematical background. One definition of Solid State Physics is it is the study of the physical (e.g. the electrical, dielectric, magnetic, elastic, and thermal) properties of solids in terms of basic physical laws. In one sense, Solid State Physics is more like chemistry than some other branches of physics because it focuses on common properties of large classes of materials. It is typical that Solid State Physics emphasizes how physics properties link to electronic structure. We have retained the term Solid Modern solid state physics came of age in the late thirties and forties and is now is part of condensed matter physics which includes liquids, soft materials, and non-crystalline solids. This solid state/condensed matter physics book begin...

Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

Science.gov (United States)

Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

2014-01-01

The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

Science.gov (United States)

Kao, Wei-Chieh

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

Layered semiconductor neutron detectors

Science.gov (United States)

Mao, Samuel S; Perry, Dale L

2013-12-10

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Quantum Computing in Solid State Systems

CERN Document Server

Ruggiero, B; Granata, C

2006-01-01

The aim of Quantum Computation in Solid State Systems is to report on recent theoretical and experimental results on the macroscopic quantum coherence of mesoscopic systems, as well as on solid state realization of qubits and quantum gates. Particular attention has been given to coherence effects in Josephson devices. Other solid state systems, including quantum dots, optical, ion, and spin devices which exhibit macroscopic quantum coherence are also discussed. Quantum Computation in Solid State Systems discusses experimental implementation of quantum computing and information processing devices, and in particular observations of quantum behavior in several solid state systems. On the theoretical side, the complementary expertise of the contributors provides models of the various structures in connection with the problem of minimizing decoherence.

Epitaxial lift-off for solid-state cavity quantum electrodynamics

International Nuclear Information System (INIS)

Greuter, Lukas; Najer, Daniel; Kuhlmann, Andreas V.; Starosielec, Sebastian; Warburton, Richard J.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.

2015-01-01

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

1990-01-01

The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

Solid-State Nanopore

Directory of Open Access Journals (Sweden)

Zhishan Yuan

2018-02-01

Full Text Available Abstract Solid-state nanopore has captured the attention of many researchers due to its characteristic of nanoscale. Now, different fabrication methods have been reported, which can be summarized into two broad categories: “top-down” etching technology and “bottom-up” shrinkage technology. Ion track etching method, mask etching method chemical solution etching method, and high-energy particle etching and shrinkage method are exhibited in this report. Besides, we also discussed applications of solid-state nanopore fabrication technology in DNA sequencing, protein detection, and energy conversion.

Solid State Physics Introduction to the Theory

CERN Document Server

Patterson, James D

2007-01-01

Learning Solid State Physics involves a certain degree of maturity, since it involves tying together diverse concepts from many areas of physics. The objective is to understand, in a basic way, how solid materials behave. To do this one needs both a good physical and mathematical background. One definition of Solid State Physics is it is the study of the physical (e.g. the electrical, dielectric, magnetic, elastic, and thermal) properties of solids in terms of basic physical laws. In one sense, Solid State Physics is more like chemistry than some other branches of physics because it focuses on common properties of large classes of materials. It is typical that Solid State Physics emphasizes how physics properties link to electronic structure. We have retained the term Solid State Physics, even though Condensed Matter Physics is more commonly used. Condensed Matter Physics includes liquids and non-crystalline solids such as glass, which we shall not discuss in detail. Modern Solid State Physics came of age in ...

Fundamentals of semiconductors physics and materials properties

CERN Document Server

Yu, Peter Y

2010-01-01

This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems...

Hydrogen in disordered and amorphous solids

International Nuclear Information System (INIS)

Bambakidis, G; Bowman, R.C.

1986-01-01

This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

New solid state opening switches for repetitive pulsed power technology

Energy Technology Data Exchange (ETDEWEB)

Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

1997-12-31

In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

Solid-state polymeric dye lasers

CERN Document Server

Singh, S; Sridhar, G; Muthuswamy, V; Raja, K

2003-01-01

This paper presents a review of the organic solid-state polymer materials, which have become established as a new laser media. The photostability of these materials is discussed. Different types of solid-state lasers built around these materials are also reviewed.

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Physics and application of persistent spin helix state in semiconductor heterostructures

Science.gov (United States)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

Energy Technology Data Exchange (ETDEWEB)

Grant, C D; Zhang, J Z

2007-09-28

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Canberra semiconductor, an industrial partner for physics research

International Nuclear Information System (INIS)

Verplancke, J.; Burger, P.; Schoenmaekers, W.

1990-01-01

Canberra semiconductor produces germanium and silicon solid state detectors for nuclear radiation. Its business domain covers the production of standard detectors on an industrial basis, for industrial and applied physics applications, as well as the development of special detectors and electronics, tailored to the needs of a particular application, in science and research. There exists an important and beneficial interaction between these two activities. (orig.)

Solid-State NMR Study of New Copolymers as Solid Polymer Electrolytes

Directory of Open Access Journals (Sweden)

Jean-Christophe Daigle

2018-01-01

Full Text Available We report the analysis of comb-like polymers by solid-state NMR. The polymers were previously evaluated as solid-polymer-electrolytes (SPE for lithium-polymer-metal batteries that have suitable ionic conductivity at 60 °C. We propose to develop a correlation between 13C solid-state NMR measurements and phase segregation. 13C solid-state NMR is a perfect tool for differentiating polymer phases with fast or slow motions. 7Li was used to monitor the motion of lithium ions in the polymer, and activation energies were calculated.

Compound semiconductor device modelling

CERN Document Server

Miles, Robert

1993-01-01

Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

Organic semiconductor density of states controls the energy level alignment at electrode interfaces

Science.gov (United States)

Oehzelt, Martin; Koch, Norbert; Heimel, Georg

2014-01-01

Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alignment between the electrode Fermi energy and the transport states in the organic semiconductor both qualitatively and quantitatively. Covering the full phenomenological range of interfacial energy level alignment regimes within a single, consistent framework and continuously connecting the limiting cases described by previously proposed models allows us to resolve conflicting views in the literature. Our results highlight the density of states in the organic semiconductor as a key factor. Its shape and, in particular, the energy distribution of electronic states tailing into the fundamental gap is found to determine both the minimum value of practically achievable injection barriers as well as their spatial profile, ranging from abrupt interface dipoles to extended band-bending regions. PMID:24938867

Solid Lithium Ion Conductors (SLIC) for Lithium Solid State Batteries

Data.gov (United States)

National Aeronautics and Space Administration — To identify the most lithium-ion conducting solid electrolytes for lithium solid state batteries from the emerging types of solid electrolytes, based on a...

Jumping magneto-electric states of electrons in semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Pfeffer, Pawel; Zawadzki, Wlodek

2011-01-01

Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors

Solid state magnetism

CERN Document Server

Crangle, John

1991-01-01

Solid state magnetism is important and attempts to understand magnetic properties have led to an increasingly deep insight into the fundamental make up of solids. Both experimental and theoretical research into magnetism continue to be very active, yet there is still much ground to cover before there can be a full understanding. There is a strong interplay between the developments of materials science and of magnetism. Hundreds of new materials have been dis­ covered, often with previously unobserved and puzzling magnetic prop­ erties. A large and growing technology exists that is based on the magnetic properties of materials. Very many devices used in everyday life involve magnetism and new applications are being invented all the time. Under­ standing the fundamental background to the applications is vital to using and developing them. The aim of this book is to provide a simple, up-to-date introduction to the study of solid state magnetism, both intrinsic and technical. It is designed to meet the needs a...

Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

International Nuclear Information System (INIS)

Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

2002-01-01

The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

High-powered, solid-state rf systems

International Nuclear Information System (INIS)

Reid, D.W.

1987-01-01

Over the past two years, the requirement to supply megawatts of rf power for space-based applications at uhf and L-band frequencies has caused dramatic increases in silicon solid-state power capabilities in the frequency range from 10 to 3000 MHz. Radar and communications requirements have caused similar increases in gallium arsenide solid-state power capabilities in the frequency ranges from 3000 to 10,000 MHz. This paper reviews the present state of the art for solid-state rf amplifiers for frequencies from 10 to 10,000 MHz. Information regarding power levels, size, weight, and cost will be given. Technical specifications regarding phase and amplitude stability, efficiency, and system architecture will be discussed. Solid-stage rf amplifier susceptibility to radiation damage will also be examined

Solid-state lithium battery

Science.gov (United States)

Ihlefeld, Jon; Clem, Paul G; Edney, Cynthia; Ingersoll, David; Nagasubramanian, Ganesan; Fenton, Kyle Ross

2014-11-04

The present invention is directed to a higher power, thin film lithium-ion electrolyte on a metallic substrate, enabling mass-produced solid-state lithium batteries. High-temperature thermodynamic equilibrium processing enables co-firing of oxides and base metals, providing a means to integrate the crystalline, lithium-stable, fast lithium-ion conductor lanthanum lithium tantalate (La.sub.1/3-xLi.sub.3xTaO.sub.3) directly with a thin metal foil current collector appropriate for a lithium-free solid-state battery.

Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

Science.gov (United States)

Xu, Runshen

Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

Diode-pumped solid state laser. (Part V). ; Short pulse laser oscillation. Handotai laser reiki kotai laser. 5. ; Tan pulse hasshin

Energy Technology Data Exchange (ETDEWEB)

Kuwabara, M.; Bando, N. (Asahi Glass Co. Ltd., Tokyo (Japan))

1991-12-25

A semiconductor laser (LD) excited solid state laser using an LD as an excited light source is under discussion for its practical applications to measurements, processing, communications, office automation, and medical areas. This paper describes the discussions given on the short pulse transmission using AOQ switching elements in the LD excited solid state laser with a long wave length band (1.3{mu}m), which is expected of its application in the communications and measurements area. Based on a possibility of raising a measurements resolution by making the pluses in the LD excited solid state laser, and experiments were performed using Nd:YLF as a laser host. as a results, it was found that the smaller the effective mode volume V {sub eff},the smaller the pulse width, and that the ratio of number of initial inversion distribution (N{sub i}/N{sub t}), an important parameter to determine pulse widths, can be obtained from the ratio of the LD exciting light to the input power (P{sub in}/P{sub t}). 7 refs., 14 figs., 2 tabs.

Interface states in a class of heterojunctions between diatomic semiconductors

International Nuclear Information System (INIS)

Kandilarov, B.D.; Detcheva, V.

1979-09-01

The theory of interface state in heterojunctions between diatomic semiconductors is developed in the framework of the S-matrix approach and on the basis of a one-dimensional model. The condition for the existence of interface states is explicitly derived for undeformed and deformed herterojunctions. Numerical analysis is performed and several particular cases are discussed in order to clarify the general features of the problem. (author)

Fluidized Bed Reactor as Solid State Fermenter

Directory of Open Access Journals (Sweden)

Krishnaiah, K.

2005-01-01

Full Text Available Various reactors such as tray, packed bed, rotating drum can be used for solid-state fermentation. In this paper the possibility of fluidized bed reactor as solid-state fermenter is considered. The design parameters, which affect the performances are identified and discussed. This information, in general can be used in the design and the development of an efficient fluidized bed solid-state fermenter. However, the objective here is to develop fluidized bed solid-state fermenter for palm kernel cake conversion into enriched animal and poultry feed.

Solid state physics for metallurgists

CERN Document Server

Weiss, Richard J

2013-01-01

Metal Physics and Physical Metallurgy, Volume 6: Solid State Physics for Metallurgists provides an introduction to the basic understanding of the properties that make materials useful to mankind. This book discusses the electronic structure of matter, which is the domain of solid state physics.Organized into 12 chapters, this volume begins with an overview of the electronic structure of free atoms and the electronic structure of solids. This text then examines the basis of the Bloch theorem, which is the exact periodicity of the potential. Other chapters consider the fundamental assumption in

Solid-State Powered X-band Accelerator

Energy Technology Data Exchange (ETDEWEB)

Othman, Mohamed A.K. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Nann, Emilio A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Dolgashev, Valery A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Tantawi, Sami [SLAC National Accelerator Lab., Menlo Park, CA (United States); Neilson, Jeff [SLAC National Accelerator Lab., Menlo Park, CA (United States)

2017-03-06

In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple test cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

Energy Technology Data Exchange (ETDEWEB)

Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

2016-12-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

International Nuclear Information System (INIS)

Tuz, Vladimir R.

2016-01-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

Directory of Open Access Journals (Sweden)

Robert J. Lovelett

2016-04-01

Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route

International Nuclear Information System (INIS)

Thorat, J. H.; Kanade, K. G.; Nikam, L. K.; Chaudhari, P. D.; Panmand, R. P.; Kale, B. B.

2012-01-01

In this study, we report the synthesis of well-aligned nanocrystalline hexagonal zinc oxide (ZnO) nanoparticles by facile solid-state and co-precipitation method. The co-precipitation reactions were performed using aqueous and ethylene glycol (EG) medium using zinc acetate and adipic acid to obtain zinc adipate and further decomposition at 450 °C to confer nanocrystalline ZnO hexagons. XRD shows the hexagonal wurtzite structure of the ZnO. Thermal study reveals complete formation of ZnO at 430 °C in case of solid-state method, whereas in case of co-precipitation method complete formation was observed at 400 °C. Field emission scanning electron microscope shows spherical morphology for ZnO synthesized by solid-state method. The aqueous-mediated ZnO by co-precipitation method shows rod-like morphology. These rods are formed via self assembling of spherical nanoparticles, however, uniformly dispersed spherical crystallites were seen in EG-mediated ZnO. Transmission electron microscope (TEM) investigations clearly show well aligned and highly crystalline transparent and thin hexagonal ZnO. The particle size was measured using TEM and was observed to be 50–60 nm in case of solid-state method and aqueous-mediated co-precipitation method, while 25–50 nm in case of EG-mediated co-precipitation method. UV absorption spectra showed sharp absorption peaks with a blue shift for EG-mediated ZnO, which demonstrate the mono-dispersed lower particle size. The band gap of the ZnO was observed to be 3.4 eV which is higher than the bulk, implies nanocrystalline nature of the ZnO. The photoluminescence studies clearly indicate the strong violet and weak blue emission in ZnO nanoparticles which is quite unique. The process investigated may be useful to synthesize other oxide semiconductors and transition metal oxides.

Self-aligned nanocrystalline ZnO hexagons by facile solid-state and co-precipitation route

Energy Technology Data Exchange (ETDEWEB)

Thorat, J. H. [Mahatma Phule College, Department of Chemistry (India); Kanade, K. G. [Annasaheb Awate College (India); Nikam, L. K. [B.G. College (India); Chaudhari, P. D.; Panmand, R. P.; Kale, B. B., E-mail: kbbb1@yahoo.com [Center for Materials for Electronics Technology (C-MET) (India)

2012-02-15

In this study, we report the synthesis of well-aligned nanocrystalline hexagonal zinc oxide (ZnO) nanoparticles by facile solid-state and co-precipitation method. The co-precipitation reactions were performed using aqueous and ethylene glycol (EG) medium using zinc acetate and adipic acid to obtain zinc adipate and further decomposition at 450 Degree-Sign C to confer nanocrystalline ZnO hexagons. XRD shows the hexagonal wurtzite structure of the ZnO. Thermal study reveals complete formation of ZnO at 430 Degree-Sign C in case of solid-state method, whereas in case of co-precipitation method complete formation was observed at 400 Degree-Sign C. Field emission scanning electron microscope shows spherical morphology for ZnO synthesized by solid-state method. The aqueous-mediated ZnO by co-precipitation method shows rod-like morphology. These rods are formed via self assembling of spherical nanoparticles, however, uniformly dispersed spherical crystallites were seen in EG-mediated ZnO. Transmission electron microscope (TEM) investigations clearly show well aligned and highly crystalline transparent and thin hexagonal ZnO. The particle size was measured using TEM and was observed to be 50-60 nm in case of solid-state method and aqueous-mediated co-precipitation method, while 25-50 nm in case of EG-mediated co-precipitation method. UV absorption spectra showed sharp absorption peaks with a blue shift for EG-mediated ZnO, which demonstrate the mono-dispersed lower particle size. The band gap of the ZnO was observed to be 3.4 eV which is higher than the bulk, implies nanocrystalline nature of the ZnO. The photoluminescence studies clearly indicate the strong violet and weak blue emission in ZnO nanoparticles which is quite unique. The process investigated may be useful to synthesize other oxide semiconductors and transition metal oxides.

Solid-state personal dosimeter using dose conversion algorithm

International Nuclear Information System (INIS)

Lee, B.J.; Lee, Wanno; Cho, Gyuseong; Chang, S.Y.; Rho, S.R.

2003-01-01

Solid-state personal dosimeters using semiconductor detectors have been widely used because of their simplicity and real time operation. In this paper, a personal dosimeter based on a silicon PIN photodiode has been optimally designed by the Monte Carlo method and also developed. For performance test, the developed dosimeter was irradiated within the energy range between 50 keV and 1.25 MeV, the exposure dose rate between 3 mR/h and 25 R/h. The thickness of 0.2 mm Cu and 1.0 mm Al was selected as an optimal filter by simulation results. For minimizing the non-linear sensitivity on energy, dose conversion algorithm was presented, which was able to consider pulse number as well as pulse amplitude related to absorbed energies. The sensitivities of dosimeters developed by the proposed algorithm and the conventional method were compared and analyzed in detail. When dose conversion algorithm was used, the linearity of sensitivity was better about 38%. This dosimeter will be used for above 65 keV within the relative response of ±10% to 137 Cs

The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

DEFF Research Database (Denmark)

Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

2013-01-01

A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

Amplitude and frequency stabilized solid-state lasers in the near infrared

International Nuclear Information System (INIS)

Laporta, P.; Taccheo, S.; Marano, M.; Svelto, O.; Bava, E.; Galzerano, G.; Svelto, C.

2001-01-01

In this article we present a comprehensive review of the work done by our group on the amplitude and frequency stabilization of diode-pumped near-infrared solid-state lasers. In particular, we describe experiments based on single-mode Nd:YAG (1064 nm), Er-Yb:glass (1530-1560 nm), and Tm-Ho:YAG (2097 nm) lasers, end-pumped by semiconductor laser diodes. Amplitude stabilization is achieved by means of optoelectronic control loops sensing the laser intensity fluctuations and feeding back the error signal to the current of the pump diodes. Frequency stabilization is pursued using rovibrational molecular lines as absolute frequency references by means of various frequency locking techniques. The most interesting stability results are described in some detail whereas the wide literature cited through the paper provides for a useful reference list of related topics and experiments. (author)

Solid-state lighting-a benevolent technology

International Nuclear Information System (INIS)

Schubert, E Fred; Kim, Jong Kyu; Luo Hong; Xi, J-Q

2006-01-01

Solid-state light sources are in the process of profoundly changing the way humans generate light for general lighting applications. Solid-state light sources possess two highly desirable features, which set them apart from most other light sources: (i) they have the potential to create light with essentially unit power efficiency and (ii) the properties of light, such as spectral composition and temporal modulation, can be controlled to a degree that is not possible with conventional light sources such as incandescent and fluorescent lamps. The implications are enormous and, as a consequence, many positive developments are to be expected including a reduction in global energy consumption, reduction of global-warming-gas and pollutant emissions and a multitude of new functionalities benefiting numerous applications. This review will assess the impact of solid-state lighting technology on energy consumption, the environment and on emerging application fields that make use of the controllability afforded by solid-state sources. The review will also discuss technical areas that fuel continued progress in solid-state lighting. Specifically, we will review the use of novel phosphor distributions in white light-emitting diodes (LEDs) and show the strong influence of phosphor distribution on efficiency. We will also review the use of reflectors in LEDs with emphasis on 'perfect' reflectors, i.e. reflectors with highly reflective omni-directional characteristics. Finally, we will discuss a new class of thin-film materials with an unprecedented low refractive index. Such low-n materials may strongly contribute to the continuous progress in solid-state lighting

Two dimensional solid state NMR

International Nuclear Information System (INIS)

Kentgens, A.P.M.

1987-01-01

This thesis illustrates, by discussing some existing and newly developed 2D solid state experiments, that two-dimensional NMR of solids is a useful and important extension of NMR techniques. Chapter 1 gives an overview of spin interactions and averaging techniques important in solid state NMR. As 2D NMR is already an established technique in solutions, only the basics of two dimensional NMR are presented in chapter 2, with an emphasis on the aspects important for solid spectra. The following chapters discuss the theoretical background and applications of specific 2D solid state experiments. An application of 2D-J resolved NMR, analogous to J-resolved spectroscopy in solutions, to natural rubber is given in chapter 3. In chapter 4 the anisotropic chemical shift is mapped out against the heteronuclear dipolar interaction to obtain information about the orientation of the shielding tensor in poly-(oxymethylene). Chapter 5 concentrates on the study of super-slow molecular motions in polymers using a variant of the 2D exchange experiment developed by us. Finally chapter 6 discusses a new experiment, 2D nutation NMR, which makes it possible to study the quadrupole interaction of half-integer spins. 230 refs.; 48 figs.; 8 tabs

Energy-Tunable Sources of Entangled Photons: A Viable Concept for Solid-State-Based Quantum Relays

Science.gov (United States)

Trotta, Rinaldo; Martín-Sánchez, Javier; Daruka, Istvan; Ortix, Carmine; Rastelli, Armando

2015-04-01

We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a microstructured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of self-assembled quantum dots (QDs) via anisotropic strain engineering. Theoretical models based on k .p theory in combination with finite-element calculations show that the energy of the polarization-entangled photons emitted by QDs can be tuned in a range larger than 100 meV without affecting the degree of entanglement of the quantum source. These results pave the way towards the deterministic implementation of QD entanglement resources in all-electrically-controlled solid-state-based quantum relays.

A new chemical route to a hybrid nanostructure: room-temperature solid-state reaction synthesis of Ag@AgCl with efficient photocatalysis.

Science.gov (United States)

Hu, Pengfei; Cao, Yali

2012-08-07

The room-temperature solid-state chemical reaction technique has been used to synthesize the silver nanoparticle-loaded semiconductor silver@silver chloride for the first time. It has the advantages of convenient operation, lower cost, less pollution, and mass production. This simple technique created a wide array of nanosized silver particles which had a strong surface plasmon resonance effect in the visible region, and built up an excellent composite structure of silver@silver chloride hybrid which exhibited high photocatalytic activity and stability towards decomposition of organic methyl orange under visible-light illumination. Moreover, this work achieved the control of composition of the silver@silver chloride composite simply by adjusting the feed ratio of reactants. It offers an alternative method for synthesising metal@semiconductor composites.

Diffusion in Solids Fundamentals, Methods, Materials, Diffusion-Controlled Processes

CERN Document Server

Mehrer, Helmut

2007-01-01

Diffusion is a vital topic in solid-state physics and chemistry, physical metallurgy and materials science. Diffusion processes are ubiquitous in solids at elevated temperatures. A thorough understanding of diffusion in materials is crucial for materials development and engineering. This book first gives an account of the central aspects of diffusion in solids, for which the necessary background is a course in solid state physics. It then provides easy access to important information about diffuson in metals, alloys, semiconductors, ion-conducting materials, glasses and nanomaterials. Several diffusion-controlled phenomena, including ionic conduction, grain-boundary and dislocation pipe diffusion, are considered as well. Graduate students in solid-state physics, physical metallurgy, materials science, physical and inorganic chemistry or geophysics will benefit from this book as will physicists, chemists, metallurgists, materials engineers in academic and industrial research laboratories.

Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration

International Nuclear Information System (INIS)

Peter Sandvik; Stanislav Soloviev; Emad Andarawis; Ho-Young Cha; Jim Rose; Kevin Durocher; Robert Lyons; Bob Pieciuk; Jim Williams; David O'Connor

2007-01-01

The goal of this program was to develop a revolutionary solid-state gamma-ray detector suitable for use in down-hole gas and oil exploration. This advanced detector would employ wide-bandgap semiconductor technology to extend the gamma sensor's temperature capability up to 200 C as well as extended reliability, which significantly exceeds current designs based on photomultiplier tubes. In Phase II, project tasks were focused on optimization of the final APD design, growing and characterizing the full scintillator crystals of the selected composition, arranging the APD device packaging, developing the needed optical coupling between scintillator and APD, and characterizing the combined elements as a full detector system preparing for commercialization. What follows is a summary report from the second 18-month phase of this program

BODIPY star-shaped molecules as solid state colour converters for visible light communications

Energy Technology Data Exchange (ETDEWEB)

Vithanage, D. A.; Manousiadis, P. P.; Sajjad, M. T.; Samuel, I. D. W., E-mail: idws@st-andrews.ac.uk, E-mail: gat@st-andrews.ac.uk; Turnbull, G. A., E-mail: idws@st-andrews.ac.uk, E-mail: gat@st-andrews.ac.uk [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, St. Andrews KY16 9SS (United Kingdom); Rajbhandari, S. [School of Computing, Electronics and Mathematics, Coventry University, Coventry, West Midlands CV1 2JH (United Kingdom); Department of Engineering Science, University of Oxford, Oxford OX1 3PJ (United Kingdom); Chun, H.; Faulkner, G.; O' Brien, D. C. [Department of Engineering Science, University of Oxford, Oxford OX1 3PJ (United Kingdom); Orofino, C.; Cortizo-Lacalle, D.; Findlay, N. J.; Skabara, P. J. [WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G1 1XL (United Kingdom); Kanibolotsky, A. L. [WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow G1 1XL (United Kingdom); Institute of Physical-Organic Chemistry and Coal Chemistry, 02160 Kyiv (Ukraine)

2016-07-04

In this paper, we study a family of solid-state, organic semiconductors for visible light communications. The star-shaped molecules have a boron-dipyrromethene (BODIPY) core with a range of side arm lengths which control the photophysical properties. The molecules emit red light with photoluminescence quantum yields ranging from 22% to 56%. Thin films of the most promising BODIPY molecules were used as a red colour converter for visible light communications. The film enabled colour conversion with a modulation bandwidth of 73 MHz, which is 16 times higher than that of a typical phosphor used in LED lighting systems. A data rate of 370 Mbit/s was demonstrated using On-Off keying modulation in a free space link with a distance of ∼15 cm.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

International Nuclear Information System (INIS)

Mekhtiyev, M.A.; Kalina, V.A.

1980-01-01

The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

Macroscopic modelling of solid-state fermentation

NARCIS (Netherlands)

Hoogschagen, M.J.

2007-01-01

Solid-state fermentation is different from the more well known process of liquid fermentation because no free flowing water is present. The technique is primarily used in Asia. Well-known products are the foods tempe, soy sauce and saké. In industrial solid-state fermentation, the substrate usually

Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

KAUST Repository

Burschka, Julian

2011-11-16

Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm -2). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular. © 2011 American Chemical Society.

Towards room temperature solid state quantum devices at the edge of quantum chaos for long-living quantum states

International Nuclear Information System (INIS)

Prati, Enrico

2015-01-01

Long living coherent quantum states have been observed in biological systems up to room temperature. Light harvesting in chromophoresis realized by excitonic systems living at the edge of quantum chaos, where energy level distribution becomes semi-Poissonian. On the other hand, artificial materials suffer the loss of coherence of quantum states in quantum information processing, but semiconductor materials are known to exhibit quantum chaotic conditions, so the exploitation of similar conditions are to be considered. The advancements of nanofabrication, together with the control of implantation of individual atoms at nanometric precision, may open the experimental study of such special regime at the edge of the phase transitions for the electronic systems obtained by implanting impurity atoms in a silicon transistor. Here I review the recent advancements made in the field of theoretical description of the light harvesting in biological system in its connection with phase transitions at the few atoms scale and how it would be possible to achieve transition point to quantum chaotic regime. Such mechanism may thus preserve quantum coherent states at room temperature in solid state devices, to be exploited for quantum information processing as well as dissipation-free quantum electronics. (paper)

Report of the joint seminar on solid state physics, atomic and molecular physics, and materials science in the energy region of tandem accelerators

International Nuclear Information System (INIS)

Kazumata, Yukio

1993-01-01

The joint seminar on Solid State Physics, Atomic and Molecular Physics and Materials Science in the Energy Region of Tandem Acceleration was held at Tokai Research Establishment of JAERI, for two days from January 22 to 23, 1991. About 60 physicists and material scientists participated and 18 papers were presented in this seminar. The topics presented in this seminar included lattice defects in semiconductors, ion-solid collisions, atomic collisions by high energy particles, radiation effects on high T c superconducting materials and FCC metals, radiation effects on materials of space and fusion reactors, uranium compounds and superlattice. (J.P.N.)

Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.

Science.gov (United States)

Sutter, Eli; Sutter, Peter

2008-02-01

We use transmission electron microscopy observations to establish the parts of the phase diagram of nanometer sized Au-Ge alloy drops at the tips of Ge nanowires (NWs) that determine their temperature-dependent equilibrium composition and, hence, their exchange of semiconductor material with the NWs. We find that the phase diagram of the nanoscale drop deviates significantly from that of the bulk alloy, which explains discrepancies between actual growth results and predictions on the basis of the bulk-phase equilibria. Our findings provide the basis for tailoring vapor-liquid-solid growth to achieve complex one-dimensional materials geometries.

Neutron and gamma irradiation effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Electron transfer reactions in microporous solids. Progress report, September 1990--January 1993

Energy Technology Data Exchange (ETDEWEB)

Mallouk, T.E.

1993-01-01

Basic thrust the research program involves use of microporous solids (zeolites, clays, layered and tunnel structure oxide semiconductors) as organizing media for artificial photosynthetic systems. Purpose of the microporous solid is twofold. First, it induces spatial organization of photoactive and electroactive components (sensitizers, semiconductor particles, electron relays, and catalysts) at the solid-solution interface, enhancing the quantum efficiency of charge separation and separating physically the ultimate electron donor and acceptor in the electron transport chain. Second, since the microcrystalline solid admits only molecules of a certain charge and size, it is possible to achieve permanent charge separation by sieving chemical photoproducts (e.g., H{sub 2} and I{sub 3}{sup {minus}}, or H{sub 2} and O{sub 2)} from each other. Spectroscopic and electrochemical methods are used to study the kinetics of electron transfer reactions in these hybrid molecular/solid state assemblies.

Application of positron annihilation techniques for semiconductor studies

International Nuclear Information System (INIS)

Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

2004-01-01

Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

Theoretical models of ferromagnetic III-V semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Kučera, Jan; MacDonald, A. H.

2003-01-01

Roč. 3, - (2003), s. 461-464 ISSN 1567-1739. [Mesoscopic Electronics COST Workshop. Catania, 16.10.2002-19.10.2002] Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.117, year: 2002

Theory of quasiparticle surface states in semiconductor surfaces

International Nuclear Information System (INIS)

Hybertsen, M.S.; Louie, S.G.

1988-01-01

A first-principles theory of the quasiparticle surface-state energies on semiconductor surfaces is developed. The surface properties are calculated using a repeated-slab geometry. Many-body effects due to the electron-electron interaction are represented by the electron self-energy operator including the full surface Green's function and local fields and dynamical screening effects in the Coulomb interaction. Calculated surface-state energies for the prototypical Si(111):As and Ge(111):As surfaces are presented. The calculated energies and dispersions for the occupied surface states (resonances) are in excellent agreement with recent angle-resolved photoemission data. Predictions are made for the position of empty surface states on both surfaces which may be experimentally accessible. The resulting surface state gap at Gamma-bar for Si(111):As agrees with recent scanning-tunneling-spectroscopy measurements. Comparison of the present results to eigenvalues from the local-density-functional calculation reveals substantial corrections for the gaps between empty and occupied surface states. This correction is found to depend on the character of the surface states involved

Diffusion relaxation times of nonequilibrium isolated small bodies and their solid phase ensembles to equilibrium states

Science.gov (United States)

Tovbin, Yu. K.

2017-08-01

The possibility of obtaining analytical estimates in a diffusion approximation of the times needed by nonequilibrium small bodies to relax to their equilibrium states based on knowledge of the mass transfer coefficient is considered. This coefficient is expressed as the product of the self-diffusion coefficient and the thermodynamic factor. A set of equations for the diffusion transport of mixture components is formulated, characteristic scales of the size of microheterogeneous phases are identified, and effective mass transfer coefficients are constructed for them. Allowing for the developed interface of coexisting and immiscible phases along with the porosity of solid phases is discussed. This approach can be applied to the diffusion equalization of concentrations of solid mixture components in many physicochemical systems: the mutual diffusion of components in multicomponent systems (alloys, semiconductors, solid mixtures of inert gases) and the mass transfer of an absorbed mobile component in the voids of a matrix consisting of slow components or a mixed composition of mobile and slow components (e.g., hydrogen in metals, oxygen in oxides, and the transfer of molecules through membranes of different natures, including polymeric).

Solid-state NMR basic principles and practice

CERN Document Server

Apperley, David C; Hodgkinson, Paul

2014-01-01

Nuclear Magnetic Resonance (NMR) has proved to be a uniquely powerful and versatile tool for analyzing and characterizing chemicals and materials of all kinds. This book focuses on the latest developments and applications for "solid-state" NMR, which has found new uses from archaeology to crystallography to biomaterials and pharmaceutical science research. The book will provide materials engineers, analytical chemists, and physicists, in and out of lab, a survey of the techniques and the essential tools of solid-state NMR, together with a practical guide on applications. In this concise introduction to the growing field of solid-state nuclear magnetic resonance spectroscopy The reader will find: * Basic NMR concepts for solids, including guidance on the spin-1/2 nuclei concept * Coverage of the quantum mechanics aspects of solid state NMR and an introduction to the concept of quadrupolar nuclei * An understanding relaxation, exchange and quantitation in NMR * An analysis and interpretation of NMR data, with e...

Repercussion of Solid state vs. Liquid state synthesized p-n heterojunction RGO-copper phosphate on proton reduction potential in water.

Science.gov (United States)

Samal, Alaka; Das, Dipti P; Madras, Giridhar

2018-02-13

The same copper phosphate catalysts were synthesized by obtaining the methods involving solid state as well as liquid state reactions in this work. And then the optimised p-n hybrid junction photocatalysts have been synthesized following the same solid/liquid reaction pathways. The synthesized copper phosphate photocatalyst has unique rod, flower, caramel-treat-like morphology. The Mott-Schottky behavior is in accordance with the expected behavior of n-type semiconductor and the carrier concentration was calculated using the M-S analysis for the photocatalyst. And for the p-n hybrid junction of 8RGO-Cu 3 (PO 4 ) 2 -PA (PA abbreviated for photoassisted synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -EG(EG abbreviated for Ethylene Glycol based synthesis method), 8RGO-Cu 3 (PO 4 ) 2 -PEG (PEG abbreviated for Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol based synthesis method)the amount of H 2 synthesized was 7500, 6500 and 4500 µmol/h/g, respectively. The excited electrons resulting after the irradiation of visible light on the CB of p-type reduced graphene oxide (RGO) migrate easily to n-type Cu 3 (PO 4 ) 2 via. the p-n junction interfaces and hence great charge carrier separation was achieved.

Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films

Science.gov (United States)

Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, J. C.

2017-02-01

Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.

Solid-state lighting: an energy-economics perspective

International Nuclear Information System (INIS)

Tsao, J Y; Creighton, J R; Coltrin, M E; Simmons, J A; Saunders, H D

2010-01-01

Artificial light has long been a significant factor contributing to the quality and productivity of human life. As a consequence, we are willing to use huge amounts of energy to produce it. Solid-state lighting (SSL) is an emerging technology that promises performance features and efficiencies well beyond those of traditional artificial lighting, accompanied by potentially massive shifts in (a) the consumption of light, (b) the human productivity and energy use associated with that consumption and (c) the semiconductor chip area inventory and turnover required to support that consumption. In this paper, we provide estimates of the baseline magnitudes of these shifts using simple extrapolations of past behaviour into the future. For past behaviour, we use recent studies of historical and contemporary consumption patterns analysed within a simple energy-economics framework (a Cobb-Douglas production function and profit maximization). For extrapolations into the future, we use recent reviews of believed-achievable long-term performance targets for SSL. We also discuss ways in which the actual magnitudes could differ from the baseline magnitudes of these shifts. These include: changes in human societal demand for light; possible demand for features beyond lumens; and guidelines and regulations aimed at economizing on consumption of light and associated energy.

Solid-state lighting: an energy-economics perspective

Energy Technology Data Exchange (ETDEWEB)

Tsao, J Y; Creighton, J R; Coltrin, M E; Simmons, J A [Physical, Chemical and Nano Sciences Center, Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185-0601 (United States); Saunders, H D, E-mail: jytsao@sandia.go, E-mail: jrcreig@sandia.go, E-mail: mecoltr@sandia.go, E-mail: jsimmon@sandia.go, E-mail: hsaunders@decisionprocessesinc.co [Decision Processes Incorporated, 2308 Saddleback Drive, Danville, CA 94506 (United States)

2010-09-08

Artificial light has long been a significant factor contributing to the quality and productivity of human life. As a consequence, we are willing to use huge amounts of energy to produce it. Solid-state lighting (SSL) is an emerging technology that promises performance features and efficiencies well beyond those of traditional artificial lighting, accompanied by potentially massive shifts in (a) the consumption of light, (b) the human productivity and energy use associated with that consumption and (c) the semiconductor chip area inventory and turnover required to support that consumption. In this paper, we provide estimates of the baseline magnitudes of these shifts using simple extrapolations of past behaviour into the future. For past behaviour, we use recent studies of historical and contemporary consumption patterns analysed within a simple energy-economics framework (a Cobb-Douglas production function and profit maximization). For extrapolations into the future, we use recent reviews of believed-achievable long-term performance targets for SSL. We also discuss ways in which the actual magnitudes could differ from the baseline magnitudes of these shifts. These include: changes in human societal demand for light; possible demand for features beyond lumens; and guidelines and regulations aimed at economizing on consumption of light and associated energy.

Photoemission from solids: the transition from solid-state to atomic physics

International Nuclear Information System (INIS)

Shirley, D.A.

1980-08-01

As the photon energy is increased, photoemission from solids undergoes a slow transition from solid-state to atomic behavior. However, throughout the energy range hν = 10 to 1000 eV or higher both types of phenomena are present. Thus angle-resolved photoemission can only be understood quantitatively if each experimenter recognizes the presence of band-structure, photoelectron diffraction, and photoelectron asymmetry effects. The quest for this understanding will build some interesting bridges between solid-state and atomic physics and should also yield important new insights about the phenomena associated with photoemission

Lithium-ion transport in inorganic solid state electrolyte

International Nuclear Information System (INIS)

Gao Jian; Li Hong; Zhao Yu-Sheng; Shi Si-Qi

2016-01-01

An overview of ion transport in lithium-ion inorganic solid state electrolytes is presented, aimed at exploring and designing better electrolyte materials. Ionic conductivity is one of the most important indices of the performance of inorganic solid state electrolytes. The general definition of solid state electrolytes is presented in terms of their role in a working cell (to convey ions while isolate electrons), and the history of solid electrolyte development is briefly summarized. Ways of using the available theoretical models and experimental methods to characterize lithium-ion transport in solid state electrolytes are systematically introduced. Then the various factors that affect ionic conductivity are itemized, including mainly structural disorder, composite materials and interface effects between a solid electrolyte and an electrode. Finally, strategies for future material systems, for synthesis and characterization methods, and for theory and calculation are proposed, aiming to help accelerate the design and development of new solid electrolytes. (topical review)

Advances in Solid State Physics

CERN Document Server

Haug, Rolf

2008-01-01

The present volume 47 of the Advances in Solid State Physics contains the written version of a large number of the invited talks of the 2007 Spring Meeting of the Arbeitskreis Festkörperphysik which was held in Regensburg, Germany, from March 26 to 30, 2007 in conjunction with the 71st Annual Meeting of the Deutsche Physikalische Gesellschaft.It gives an overview of the present status of solid state physics where low-dimensional systems such as quantum dots and quantum wires are dominating. The importance of magnetic materials is reflected by the large number of contributions in the part dealing with ferromagnetic films and particles. One of the most exciting achievements of the last couple of years is the successful application of electrical contacts to and the investigation of single layers of graphene. This exciting physics is covered in Part IV of this book. Terahertz physics is another rapidly moving field which is presented here by five contributions. Achievements in solid state physics are only rarely...

Nanogap Electrodes towards Solid State Single-Molecule Transistors.

Science.gov (United States)

Cui, Ajuan; Dong, Huanli; Hu, Wenping

2015-12-01

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic layer deposition of lithium phosphates as solid-state electrolytes for all-solid-state microbatteries

International Nuclear Information System (INIS)

Wang, Biqiong; Liu, Jian; Sun, Qian; Li, Ruying; Sun, Xueliang; Sham, Tsun-Kong

2014-01-01

Atomic layer deposition (ALD) has been shown as a powerful technique to build three-dimensional (3D) all-solid-state microbattery, because of its unique advantages in fabricating uniform and pinhole-free thin films in 3D structures. The development of solid-state electrolyte by ALD is a crucial step to achieve the fabrication of 3D all-solid-state microbattery by ALD. In this work, lithium phosphate solid-state electrolytes were grown by ALD at four different temperatures (250, 275, 300, and 325 °C) using two precursors (lithium tert-butoxide and trimethylphosphate). A linear dependence of film thickness on ALD cycle number was observed and uniform growth was achieved at all four temperatures. The growth rate was 0.57, 0.66, 0.69, and 0.72 Å/cycle at deposition temperatures of 250, 275, 300, and 325 °C, respectively. Furthermore, x-ray photoelectron spectroscopy confirmed the compositions and chemical structures of lithium phosphates deposited by ALD. Moreover, the lithium phosphate thin films deposited at 300 °C presented the highest ionic conductivity of 1.73 × 10 −8 S cm −1 at 323 K with ∼0.51 eV activation energy based on the electrochemical impedance spectroscopy. The ionic conductivity was calculated to be 3.3 × 10 −8 S cm −1 at 26 °C (299 K). (paper)

Solid-state membrane module

Science.gov (United States)

Gordon, John Howard [Salt Lake City, UT; Taylor, Dale M [Murray, UT

2011-06-07

Solid-state membrane modules comprising at least one membrane unit, where the membrane unit has a dense mixed conducting oxide layer, and at least one conduit or manifold wherein the conduit or manifold comprises a dense layer and at least one of a porous layer and a slotted layer contiguous with the dense layer. The solid-state membrane modules may be used to carry out a variety of processes including the separating of any ionizable component from a feedstream wherein such ionizable component is capable of being transported through a dense mixed conducting oxide layer of the membrane units making up the membrane modules. For ease of construction, the membrane units may be planar.

Oriented solid-state NMR spectrosocpy

DEFF Research Database (Denmark)

Bertelsen, Kresten

This thesis is concerned with driving forward oriented solid-state NMR spectroscopy as a viable technique for studying peptides in membrane bilayers. I will show that structural heterogeneity is an intrinsic part of the peptide/lipid system and that NMR can be used to characterize static...... and dynamic structural features of the peptides and its local surroundings. In fact one need to take into account the dynamical features of the system in order to correctly predict the structure from oriented solid-state NMR spectra.      ...

Solid State Lighting Reliability Components to Systems

CERN Document Server

Fan, XJ

2013-01-01

Solid State Lighting Reliability: Components to Systems begins with an explanation of the major benefits of solid state lighting (SSL) when compared to conventional lighting systems including but not limited to long useful lifetimes of 50,000 (or more) hours and high efficacy. When designing effective devices that take advantage of SSL capabilities the reliability of internal components (optics, drive electronics, controls, thermal design) take on critical importance. As such a detailed discussion of reliability from performance at the device level to sub components is included as well as the integrated systems of SSL modules, lamps and luminaires including various failure modes, reliability testing and reliability performance. This book also: Covers the essential reliability theories and practices for current and future development of Solid State Lighting components and systems Provides a systematic overview for not only the state-of-the-art, but also future roadmap and perspectives of Solid State Lighting r...

Solid state multinuclear NMR. A versatile tool for studying the reactivity of solid systems

Energy Technology Data Exchange (ETDEWEB)

MacKenzie, Kenneth J.D. [MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington (New Zealand)

2004-08-31

Traditionally, X-ray powder diffraction has been a favoured method for studying chemical reactions in the solid state, but the increasing importance of energy-efficient synthesis methods for solids (e.g. sol-gel synthesis, mechanochemical synthesis) has led to the need for an analytical method not dependent on long-range structural periodicity. Multinuclear solid state nuclear magnetic resonance (NMR) represents a technique which is equally applicable to amorphous or crystalline solids, and is now used in increasing numbers of solid state studies.This paper briefly outlines the principles and practical details of this powerful technique and gives examples of its use in solid-state chemistry, particularly in very recent studies of mechanochemical synthesis of advanced sialon ceramics. The temperature at which these technically important silicon aluminium oxynitride compounds are formed can be significantly lowered by high-energy grinding of their components to produce X-ray amorphous precursors. Solid-state NMR has been used to provide detailed information which could not have been obtained by any other means about the chemical environment of the Si and Al atoms in these amorphous precursors, and the various atomic movements undergone as they crystallise to the final product.

Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration

Energy Technology Data Exchange (ETDEWEB)

Peter Sandvik; Stanislav Soloviev; Emad Andarawis; Ho-Young Cha; Jim Rose; Kevin Durocher; Robert Lyons; Bob Pieciuk; Jim Williams; David O' Connor

2007-08-10

The goal of this program was to develop a revolutionary solid-state gamma-ray detector suitable for use in down-hole gas and oil exploration. This advanced detector would employ wide-bandgap semiconductor technology to extend the gamma sensor's temperature capability up to 200 C as well as extended reliability, which significantly exceeds current designs based on photomultiplier tubes. In Phase II, project tasks were focused on optimization of the final APD design, growing and characterizing the full scintillator crystals of the selected composition, arranging the APD device packaging, developing the needed optical coupling between scintillator and APD, and characterizing the combined elements as a full detector system preparing for commercialization. What follows is a summary report from the second 18-month phase of this program.

Liquid Crystalline Semiconductors Materials, properties and applications

CERN Document Server

Kelly, Stephen; O'Neill, Mary

2013-01-01

This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. Within the family of organic electronic materials, liquid crystals are relative newcomers. The first electronically conducting liquid crystals were reported in 1988 but already a substantial literature has developed. The advantage of liquid crystalline semiconductors is that they have the easy processability of amorphous and polymeric semiconductors but they usually have higher charge carrier mobilities. Their mobilities do not reach the levels seen in crystalline organics but they circumvent all of t...

Solid-State Synthesis and Effect of Temperature on Optical Properties of CuO Nanoparticles

Institute of Scientific and Technical Information of China (English)

C.C.Vidyasagar; Y.Arthoba Naik; T.G.Venkatesha; R.Viswanatha

2012-01-01

Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material used for photovoltaic cells. Cu O is attractive as a selective solar absorber since it has high solar absorbance and a low thermal emittance. The present work describes the synthesis and characterization of semiconducting Cu O nanoparticles via one-step, solid-state reaction in the presence of Polyethylene glycol400 as size controlling agent for the preparation of Cu O nanoparticles at different temperatures. Solid-state mechanochemical processing, which is not only a physical size reduction process in conventional milling but also a chemical reaction, is mechanically activated at the nanoscale during grinding. The present method is a simple and efficient method of preparing nanoparticles with high yield at low cost. The structural and chemical composition of the nanoparticles were analyzed by X-ray diffraction, field emission scanning electron microscopy and energy-dispersive spectrometer, respectively. Optical properties and band gap of Cu O nanoparticles were studied by UV-Vis spectroscopy. These results showed that the band gap energy decreased with increase of annealing temperature, which can be attributed to the improvement in grain size of the samples.

Solid state ionics: a Japan perspective

Science.gov (United States)

Yamamoto, Osamu

2017-12-01

The 70-year history of scientific endeavor of solid state ionics research in Japan is reviewed to show the contribution of Japanese scientists to the basic science of solid state ionics and its applications. The term 'solid state ionics' was defined by Takehiko Takahashi of Nagoya University, Japan: it refers to ions in solids, especially solids that exhibit high ionic conductivity at a fairly low temperature below their melting points. During the last few decades of exploration, many ion conducting solids have been discovered in Japan such as the copper-ion conductor Rb4Cu16I7Cl13, proton conductor SrCe1-xYxO3, oxide-ion conductor La0.9Sr0.9Ga0.9Mg0.1O3, and lithium-ion conductor Li10GeP2S12. Rb4Cu16I7Cl13 has a conductivity of 0.33 S cm-1 at 25 °C, which is the highest of all room temperature ion conductive solid electrolytes reported to date, and Li10GeP2S12 has a conductivity of 0.012 S cm-1 at 25 °C, which is the highest among lithium-ion conductors reported to date. Research on high-temperature proton conducting ceramics began in Japan. The history, the discovery of novel ionic conductors and the story behind them are summarized along with basic science and technology.

Introduction to solid state electronics

CERN Document Server

Wang, FFY

1989-01-01

This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These proble

Solid state physics an introduction

CERN Document Server

Hofmann, Philip

2015-01-01

A must-have textbook for any undergraduate studying solid state physics. This successful brief course in solid state physics is now in its second edition. The clear and concise introduction not only describes all the basic phenomena and concepts, but also such advanced issues as magnetism and superconductivity. Each section starts with a gentle introduction, covering basic principles, progressing to a more advanced level in order to present a comprehensive overview of the subject. The book is providing qualitative discussions that help undergraduates understand concepts even if they can?t foll

Ultrasonic methods in solid state physics

CERN Document Server

Truell, John; Elbaum, Charles

1969-01-01

Ultrasonic Methods in Solid State Physics is devoted to studies of energy loss and velocity of ultrasonic waves which have a bearing on present-day problems in solid-state physics. The discussion is particularly concerned with the type of investigation that can be carried out in the megacycle range of frequencies from a few megacycles to kilomegacycles; it deals almost entirely with short-duration pulse methods rather than with standing-wave methods. The book opens with a chapter on a classical treatment of wave propagation in solids. This is followed by separate chapters on methods and techni

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

A toy model to investigate the existence of excitons in the ground state of strongly-correlated semiconductor

Science.gov (United States)

Karima, H. R.; Majidi, M. A.

2018-04-01

Excitons, quasiparticles associated with bound states between an electron and a hole and are typically created when photons with a suitable energy are absorbed in a solid-state material. We propose to study a possible emergence of excitons, created not by photon absorption but the effect of strong electronic correlations. This study is motivated by a recent experimental study of a substrate material SrTiO3 (STO) that reveals strong exitonic signals in its optical conductivity. Here we conjecture that some excitons may already exist in the ground state as a result of the electronic correlations before the additional excitons being created later by photon absorption. To investigate the existence of excitons in the ground state, we propose to study a simple 4-energy-level model that mimics a situation in strongly-correlated semiconductors. The four levels are divided into two groups, lower and upper groups separated by an energy gap, Eg , mimicking the valence and the conduction bands, respectively. Further, we incorporate repulsive Coulomb interactions between the electrons. The model is then solved by exact diagonalization method. Our result shows that the toy model can demonstrate band gap widening or narrowing and the existence of exciton in the ground state depending on interaction parameter values.

Silicon solid state devices and radiation detection

CERN Document Server

Leroy, Claude

2012-01-01

This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

Characterization of defects in semiconductors using radioactive isotopes

CERN Document Server

Deicher, Manfred

2007-01-01

Radioactive atoms have been used in solid-state physics and in material science for many decades. Besides their classical application as tracer for diffusion studies, nuclear techniques such as Mossbauer spectroscopy, perturbed angular correlation, and emission channeling have used nuclear properties to gain microscopical information on the structural and dynamical properties of solids. The availability of many different radioactive isotopes as a clean ion beam at facilities like ISOLDE/CERN has triggered a new era involving methods sensitive for the optical and electronic properties of solids, especially in the field of semiconductor physics. Spectroscopic techniques like photoluminescence (PL), deep-level transient spectroscopy (DLTS), and Hall effect gain a new quality by using radioactive isotopes. Due to their decay the chemical origin of an observed electronic and optical behavior of a specific defect or dopant can be unambiguously identified. This contribution will highlight a few examples to illustrat...

Solid state laser technology - A NASA perspective

Science.gov (United States)

Allario, F.

1985-01-01

NASA's program for developing solid-state laser technology and applying it to the Space Shuttle and Space Platform is discussed. Solid-state lasers are required to fulfill the Earth Observation System's requirements. The role of the Office of Aeronautics and Space Technology in developing a NASA tunable solid-state laser program is described. The major goals of the program involve developing a solid-state pump laser in the green, using AlGaAs array technology, pumping a Nd:YAG/SLAB crystal or glass, and fabricating a lidar system, with either a CO2 laser at 10.6 microns or a Nd:YAG laser at 1.06 microns, to measure tropospheric winds to an accuracy of + or - 1 m/s and a vertical resolution of 1 km. The procedures to be followed in order to visualize this technology plan include: (1) material development and characterization, (2) laser development, and (3) implementation of the lasers.

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Magnetic excitations in intermediate valence semiconductors with singlet ground state

International Nuclear Information System (INIS)

Kikoin, K.A.; Mishchenko, A.S.

1994-01-01

The explanation of the origin inelastic peaks in magnetic neutron scattering spectra of the mixed-valent semiconductor SmB 6 is proposed. It is shown that the excitonic theory of intermediate valence state not only gives the value of the peak frequency but also explains the unusual angular dependence of intensity of inelastic magnetic scattering and describes the dispersion of magnetic excitations in good agreement with experiment

The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

Energy Technology Data Exchange (ETDEWEB)

Anderson, T.J.

1998-07-21

The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

Solid state track detectors

International Nuclear Information System (INIS)

Reuther, H.

1976-11-01

This paper gives a survey of the present state of the development and the application of solid state track detectors. The fundamentals of the physical and chemical processes of the track formation and development are explained, the different detector materials and their registration characteristics are mentioned, the possibilities of the experimental practice and the most variable applications are discussed. (author)

Monolithic solid-state lasers for spaceflight

Science.gov (United States)

Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

2015-02-01

A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

Solid-state pulse modulator for a 1.7-MW X-band magnetron

International Nuclear Information System (INIS)

Choi, Jaegu; Shin, Yongmoon; Choi, Youngwook; Kim, Kwanho

2014-01-01

Medical linear accelerators (LINAC) for cancer treatment require pulse modulators to generate high-power pulses with a fast rise time, flat top and short duration to drive high-power magnetrons. Solid-state pulse modulators (SSPM) for medical LINACs that use high power semiconductor switches with high repetition rates, high stability and long lifetimes have been introduced to replace conventional linear-type pulse generators that use gaseous discharge switches. In this paper, the performance of a developed SSPM, which mainly consists of a capacitor charger, an insulated-gate bipolar transistor (IGBT) - capacitor stack and a pulse transformer, is evaluated with a dummy load and an X-band magnetron load. A theoretical analysis of the pulse transformer, which is a critical element of the SSPM, is carried out. The output pulse has a fast rise time and low droop, such that the modulator can drive the X-band magnetron.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array

Science.gov (United States)

Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.

2017-08-01

Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

Science.gov (United States)

Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

2017-08-02

Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

Solid state physics

CERN Document Server

Grosso, Giuseppe

2013-01-01

Solid State Physics is a textbook for students of physics, material science, chemistry, and engineering. It is the state-of-the-art presentation of the theoretical foundations and application of the quantum structure of matter and materials. This second edition provides timely coverage of the most important scientific breakthroughs of the last decade (especially in low-dimensional systems and quantum transport). It helps build readers' understanding of the newest advances in condensed matter physics with rigorous yet clear mathematics. Examples are an integral part of the text, carefully de

Hybrid integrated biological-solid-state system powered with adenosine triphosphate

Science.gov (United States)

Roseman, Jared M.; Lin, Jianxun; Ramakrishnan, Siddharth; Rosenstein, Jacob K.; Shepard, Kenneth L.

2015-12-01

There is enormous potential in combining the capabilities of the biological and the solid state to create hybrid engineered systems. While there have been recent efforts to harness power from naturally occurring potentials in living systems in plants and animals to power complementary metal-oxide-semiconductor integrated circuits, here we report the first successful effort to isolate the energetics of an electrogenic ion pump in an engineered in vitro environment to power such an artificial system. An integrated circuit is powered by adenosine triphosphate through the action of Na+/K+ adenosine triphosphatases in an integrated in vitro lipid bilayer membrane. The ion pumps (active in the membrane at numbers exceeding 2 × 106 mm-2) are able to sustain a short-circuit current of 32.6 pA mm-2 and an open-circuit voltage of 78 mV, providing for a maximum power transfer of 1.27 pW mm-2 from a single bilayer. Two series-stacked bilayers provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemical to electrical energy of 14.9%.

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

Science.gov (United States)

Irkhin, P; Najafov, H; Podzorov, V

2015-10-19

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

Structural, optical, and magnetic properties of polycrystalline Co-doped TiO2 synthesized by solid-state method

International Nuclear Information System (INIS)

Bouaine, Abdelhamid; Schmerber, G.; Ihiawakrim, D.; Derory, A.

2012-01-01

Highlights: ► Influence of Co doping on the TiO 2 tetragonal structure. ► Decrease of the energy band gap after doping with Co atoms. ► Appearance of ferromagnetism in Co-doped TiO 2 diluted magnetic semiconductors. - Abstract: We have used a solid-state method to synthesize polycrystalline Co-doped TiO 2 diluted magnetic semiconductors (DMSs) with Co concentrations of 0, and 0.5 at.%. X-ray diffraction patterns reveal that Co doped TiO 2 crystallizes in the rutile tetragonal structure with no additional peaks. Transmission electron microscopy (TEM) did not indicate the presence of magnetic parasitic phases and confirmed that Co ions are uniformly distributed inside the samples. Optical absorbance measurements showed an energy band gap which decreases after doping with the Co atoms into the TiO 2 matrix. Magnetization measurements revealed a paramagnetic behavior for the as-prepared Co-doped TiO 2 and a ferromagnetic behavior for the same samples after annealed under a mixture of H 2 /N 2 atmosphere.

SOLID-STATE STORAGE DEVICE FLASH TRANSLATION LAYER

DEFF Research Database (Denmark)

2017-01-01

Embodiments of the present invention include a method for storing a data page d on a solid-state storage device, wherein the solid-state storage device is configured to maintain a mapping table in a Log-Structure Merge (LSM) tree having a C0 component which is a random access memory (RAM) device...

Microstructure of III-N semiconductors related to their applications in optoelectronics

Science.gov (United States)

Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

2005-03-01

There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

optimisation of solid optimisation of solid state fermentation

African Journals Online (AJOL)

eobe

from banana peels via solid state fermentation using Aspergillus niger. ermentation ... [7,8], apple pomace [9], banana peels [4], date palm. [10], carob ... powder, jams, juice, bar, biscuits, wine etc results in ... Yeast extract was taken as nitrogen.

Solid state electrolytes for all-solid-state 3D lithium-ion batteries

NARCIS (Netherlands)

Kokal, I.

2012-01-01

The focus of this Ph.D. thesis is to understand the lithium ion motion and to enhance the Li-ionic conductivities in commonly known solid state lithium ion conductors by changing the structural properties and preparation methods. In addition, the feasibility for practical utilization of several

Passivation-free solid state battery

Science.gov (United States)

Abraham, Kuzhikalail M.; Peramunage, Dharmasena

1998-01-01

This invention pertains to passivation-free solid-state rechargeable batteries composed of Li.sub.4 Ti.sub.5 O.sub.12 anode, a solid polymer electrolyte and a high voltage cathode. The solid polymer electrolyte comprises a polymer host, such as polyacrylonitrile, poly(vinyl chloride), poly(vinyl sulfone), and poly(vinylidene fluoride), plasticized by a solution of a Li salt in an organic solvent. The high voltage cathode includes LiMn.sub.2 O.sub.4, LiCoO.sub.2, LiNiO.sub.2 and LiV.sub.2 O.sub.5 and their derivatives.

The Oxford solid state basics

CERN Document Server

Simon, Steven H

2013-01-01

The study of solids is one of the richest, most exciting, and most successful branches of physics. While the subject of solid state physics is often viewed as dry and tedious this new book presents the topic instead as an exciting exposition of fundamental principles and great intellectual breakthroughs. Beginning with a discussion of how the study of heat capacity of solids ushered in the quantum revolution, the author presents the key ideas of the field while emphasizing the deepunderlying concepts. The book begins with a discussion of the Einstein/Debye model of specific heat, and the Drude

Electrical conduction in solid materials physicochemical bases and possible applications

CERN Document Server

Suchet, J P

2013-01-01

Electrical Conduction in Solid Materials (Physicochemical Bases and Possible Applications) investigates the physicochemical bases and possible applications of electrical conduction in solid materials, with emphasis on conductors, semiconductors, and insulators. Topics range from the interatomic bonds of conductors to the effective atomic charge in conventional semiconductors and magnetic transitions in switching semiconductors. Comprised of 10 chapters, this volume begins with a description of electrical conduction in conductors and semiconductors, metals and alloys, as well as interatomic bon

Gyrotropic-nihility state in a composite ferrite-semiconductor structure

International Nuclear Information System (INIS)

Tuz, Vladimir R

2015-01-01

Characteristics of the gyrotropic-nihility state are studied in a finely-stratified ferrite-semiconductor structure, which is under an action of an external static magnetic field. Investigations are carried out with the assistance of the effective medium theory, according to which the studied structure is approximated as a uniform gyroelectromagnetic medium. The theory of the gyrotropic-nihility state is developed in terms of the eigenwaves propagation in such gyroelectromagnetic medium. The frequency and angular dependencies of the transmittance, reflectance and absorption coefficient are presented. It turns out that in the frequency band around the frequency of gyrotropic-nihility state the studied structure appears to be matched to free space with both the refractive index and the wave impedance which results in its high transmittance almost in the entire range of angles of the electromagnetic wave incidence. (paper)

Solid-state ring laser gyroscope

Science.gov (United States)

Schwartz, S.

The ring laser gyroscope is a rotation sensor used in most kinds of inertial navigation units. It usually consists in a ring cavity filled with a mixture of helium and neon, together with high-voltage pumping electrodes. The use of a gaseous gain medium, while resulting naturally in a stable bidirectional regime enabling rotation sensing, is however the main industrially limiting factor for the ring laser gyroscopes in terms of cost, reliability and lifetime. We study in this book the possibility of substituting for the gaseous gain medium a solid-state medium (diode-pumped Nd-YAG). For this, a theoretical and experimental overview of the lasing regimes of the solid-state ring laser is reported. We show that the bidirectional emission can be obtained thanks to a feedback loop acting on the states of polarization and inducing differential losses proportional to the difference of intensity between the counterpropagating modes. This leads to the achievement of a solid-state ring laser gyroscope, whose frequency response is modified by mode coupling effects. Several configurations, either mechanically or optically based, are then successively studied, with a view to improving the quality of this frequency response. In particular, vibration of the gain crystal along the longitudinal axis appears to be a very promising technique for reaching high inertial performances with a solid-state ring laser gyroscope. Gyrolaser à état solide. Le gyrolaser est un capteur de rotation utilisé dans la plupart des centrales de navigation inertielle. Dans sa forme usuelle, il est constitué d'une cavité laser en anneau remplie d'un mélange d'hélium et de néon pompé par des électrodes à haute tension. L'utilisation d'un milieu amplificateur gazeux, si elle permet de garantir naturellement le fonctionnement bidirectionnel stable nécessaire à la mesure des rotations, constitue en revanche la principale limitation industrielle des gyrolasers actuels en termes de coût, fiabilit

Obviating the requirement for oxygen in SnO2-based solid-state dye-sensitized solar cells

Science.gov (United States)

Docampo, Pablo; Snaith, Henry J.

2011-06-01

Organic semiconductors employed in solar cells are perfectly stable to solar irradiation provided oxygen content can be kept below 1 ppm. Paradoxically, the state-of-the-art molecular hole-transporter-based solid-state dye-sensitized solar cells only operate efficiently if measured in an atmosphere containing oxygen. Without oxygen, these devices rapidly lose photovoltage and photocurrent and are rendered useless. Clearly this peculiar requirement has detrimental implications to the long term stability of these devices. Through characterizing the solar cells in air and in oxygen-free atmospheres, and considering the device architecture, we identify that direct contact between the metallic cathode and the mesoporous metal oxide photo-anode is responsible for a shunting path through the device. This metal-metal oxide contact forms a Schottky barrier under ambient conditions and the barrier is suitably high so as to prevent significant shunting of the solar cells. However, under light absorption in an anaerobic atmosphere the barrier reduces significantly, opening a low resistance shunting path which dominates the current-voltage characteristics in the solar cell. By incorporating an extra interlayer of insulating mesoporous aluminum oxide, on top of the mesoporous semiconducting metal oxide electrode, we successfully block this shunting path and subsequently the devices operate efficiently in an oxygen-free atmosphere, enabling the possibility of long term stability of solid-state dye-sensitized solar cells.

Obviating the requirement for oxygen in SnO2-based solid-state dye-sensitized solar cells

International Nuclear Information System (INIS)

Docampo, Pablo; Snaith, Henry J

2011-01-01

Organic semiconductors employed in solar cells are perfectly stable to solar irradiation provided oxygen content can be kept below 1 ppm. Paradoxically, the state-of-the-art molecular hole-transporter-based solid-state dye-sensitized solar cells only operate efficiently if measured in an atmosphere containing oxygen. Without oxygen, these devices rapidly lose photovoltage and photocurrent and are rendered useless. Clearly this peculiar requirement has detrimental implications to the long term stability of these devices. Through characterizing the solar cells in air and in oxygen-free atmospheres, and considering the device architecture, we identify that direct contact between the metallic cathode and the mesoporous metal oxide photo-anode is responsible for a shunting path through the device. This metal-metal oxide contact forms a Schottky barrier under ambient conditions and the barrier is suitably high so as to prevent significant shunting of the solar cells. However, under light absorption in an anaerobic atmosphere the barrier reduces significantly, opening a low resistance shunting path which dominates the current-voltage characteristics in the solar cell. By incorporating an extra interlayer of insulating mesoporous aluminum oxide, on top of the mesoporous semiconducting metal oxide electrode, we successfully block this shunting path and subsequently the devices operate efficiently in an oxygen-free atmosphere, enabling the possibility of long term stability of solid-state dye-sensitized solar cells.

Achievement of solid-state plasma fusion ('Cold-Fusion')

International Nuclear Information System (INIS)

Arata, Yoshiaki; Zhang, Yue-Chang

1995-01-01

Using a 'QMS' (Quadrupole Mass Spectrometer), the authors detected a significantly large amount (10 20 -10 21 [cm -3 ]) of helium ( 2 4 He), which was concluded to have been produced by a deuterium nuclear reaction within a host solid. These results were found to be fully repeatable and supported the authors' proposition that solid state plasma fusion ('Cold Fusion') can be generated in energetic deuterium Strongly Coupled Plasma ('SC-plasma'). This fusion reaction is thought to be sustained by localized 'Latticequake' in a solid-state media with the deuterium density equivalent to that of the host solid. While exploring this basic proposition, the characteristic differences when compared with ultra high temperature-state plasma fusion ('Hot Fusion') are clarified. In general, the most essential reaction product in both types of the deuterium plasma fusion is considered to be helium, irrespective of the 'well-known and/or unknown reactions', which is stored within the solid-state medium in abundance as a 'Residual Product', but which generally can not enter into nor be released from host-solid at a room temperature. Even measuring instruments with relatively poor sensitivity should be able to easily detect such residual helium. An absence of residual helium means that no nuclear fusion reaction has occurred, whereas its presence provides crucial evidence that nuclear fusion has, in fact, occurred in the solid. (author)

Solid state nuclear track detection principles, methods and applications

CERN Document Server

Durrani, S A; ter Haar, D

1987-01-01

Solid State Nuclear Track Detection: Principles, Methods and Applications is the second book written by the authors after Nuclear Tracks in Solids: Principles and Applications. The book is meant as an introduction to the subject solid state of nuclear track detection. The text covers the interactions of charged particles with matter; the nature of the charged-particle track; the methodology and geometry of track etching; thermal fading of latent damage trails on tracks; the use of dielectric track recorders in particle identification; radiation dossimetry; and solid state nuclear track detecti

3D-Printing Electrolytes for Solid-State Batteries.

Science.gov (United States)

McOwen, Dennis W; Xu, Shaomao; Gong, Yunhui; Wen, Yang; Godbey, Griffin L; Gritton, Jack E; Hamann, Tanner R; Dai, Jiaqi; Hitz, Gregory T; Hu, Liangbing; Wachsman, Eric D

2018-05-01

Solid-state batteries have many enticing advantages in terms of safety and stability, but the solid electrolytes upon which these batteries are based typically lead to high cell resistance. Both components of the resistance (interfacial, due to poor contact with electrolytes, and bulk, due to a thick electrolyte) are a result of the rudimentary manufacturing capabilities that exist for solid-state electrolytes. In general, solid electrolytes are studied as flat pellets with planar interfaces, which minimizes interfacial contact area. Here, multiple ink formulations are developed that enable 3D printing of unique solid electrolyte microstructures with varying properties. These inks are used to 3D-print a variety of patterns, which are then sintered to reveal thin, nonplanar, intricate architectures composed only of Li 7 La 3 Zr 2 O 12 solid electrolyte. Using these 3D-printing ink formulations to further study and optimize electrolyte structure could lead to solid-state batteries with dramatically lower full cell resistance and higher energy and power density. In addition, the reported ink compositions could be used as a model recipe for other solid electrolyte or ceramic inks, perhaps enabling 3D printing in related fields. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A zwitterionic gel electrolyte for efficient solid-state supercapacitors

Science.gov (United States)

Peng, Xu; Liu, Huili; Yin, Qin; Wu, Junchi; Chen, Pengzuo; Zhang, Guangzhao; Liu, Guangming; Wu, Changzheng; Xie, Yi

2016-01-01

Gel electrolytes have attracted increasing attention for solid-state supercapacitors. An ideal gel electrolyte usually requires a combination of advantages of high ion migration rate, reasonable mechanical strength and robust water retention ability at the solid state for ensuring excellent work durability. Here we report a zwitterionic gel electrolyte that successfully brings the synergic advantages of robust water retention ability and ion migration channels, manifesting in superior electrochemical performance. When applying the zwitterionic gel electrolyte, our graphene-based solid-state supercapacitor reaches a volume capacitance of 300.8 F cm−3 at 0.8 A cm−3 with a rate capacity of only 14.9% capacitance loss as the current density increases from 0.8 to 20 A cm−3, representing the best value among the previously reported graphene-based solid-state supercapacitors, to the best of our knowledge. We anticipate that zwitterionic gel electrolyte may be developed as a gel electrolyte in solid-state supercapacitors. PMID:27225484

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

Solid State Theory An Introduction

CERN Document Server

Rössler, Ulrich

2009-01-01

Solid-State Theory - An Introduction is a textbook for graduate students of physics and material sciences. It stands in the tradition of older textbooks on this subject but takes up new developments in theoretical concepts and materials which are connected with such path breaking discoveries as the Quantum-Hall Effects, the high-Tc superconductors, and the low-dimensional systems realized in solids. Thus besides providing the fundamental concepts to describe the physics of electrons and ions of which the solid consists, including their interactions and the interaction with light, the book casts a bridge to the experimental facts and opens the view into current research fields.

Self-healing liquid/solid state battery

Science.gov (United States)

Burke, Paul J.; Chung, Brice H.V.; Phadke, Satyajit R.; Ning, Xiaohui; Sadoway, Donald R.

2018-02-27

A battery system that exchanges energy with an external device is provided. The battery system includes a positive electrode having a first metal or alloy, a negative electrode having a second metal or alloy, and an electrolyte including a salt of the second metal or alloy. The positive electrode, the negative electrode, and the electrolyte are in a liquid phase at an operating temperature during at least one portion of operation. The positive electrode is entirely in a liquid phase in one charged state and includes a solid phase in another charged state. The solid phase of the positive electrode includes a solid intermetallic formed by the first and the second metals or alloys. Methods of storing electrical energy from an external circuit using such a battery system are also provided.

Harwell's atomic, molecular and solid state computer programs

International Nuclear Information System (INIS)

Harker, A.H.

1976-02-01

This document is intended to introduce the computational facilities available in the fields of atomic, molecular the solid state theory on the IBM370/165 at Harwell. The programs have all been implemented and thoroughly tested by the Theory of Solid State Materials Group. (author)

Solid-State Synthesis and Effect of Temp erature on Optical Prop erties of CuO Nanoparticles

Institute of Scientific and Technical Information of China (English)

C. C. Vidyasagar; Y. Arthoba Naik∗; T. G. Venkatesha; R. Viswanatha

2012-01-01

Modulation of band energies through size control offers new ways to control photoresponse and photoconversion efficiency of the solar cell. The P-type semiconductor of copper oxide is an important functional material used for photovoltaic cells. CuO is attractive as a selective solar absorber since it has high solar absorbance and a low thermal emittance. The present work describes the synthesis and characterization of semiconducting CuO nanoparticles via one-step, solid-state reaction in the presence of Polyethylene glycol 400 as size controlling agent for the preparation of CuO nanoparticles at different temperatures. Solid-state mechanochemical processing, which is not only a physical size reduction process in conventional milling but also a chemical reaction, is mechanically activated at the nanoscale during grinding. The present method is a simple and efficient method of preparing nanoparticles with high yield at low cost. The structural and chemical composition of the nanoparticles were analyzed by X-ray diffraction, field emission scanning electron microscopy and energy-dispersive spectrometer, respectively. Optical properties and band gap of CuO nanoparticles were studied by UV-Vis spectroscopy. These results showed that the band gap energy decreased with increase of annealing temperature, which can be attributed to the improvement in grain size of the samples.

Cross-relaxation solid state lasers

International Nuclear Information System (INIS)

Antipenko, B.M.

1989-01-01

Cross-relaxation functional diagrams provide a high quantum efficiency for pumping bands of solid state laser media and a low waste heat. A large number of the cross-relaxation mechanisms for decay rare earth excited states in crystals have been investigated. These investigations have been a starting-point for development of the cross-relaxation solid state lasers. For example, the cross-relaxation interactions, have been used for the laser action development of LiYF 4 :Gd-Tb. These interactions are important elements of the functional diagrams of the 2 μm Ho-doped media sensitized with Er and Tm and the 3 μm Er-doped media. Recently, new efficient 2 μm laser media with cross-relaxation pumping diagrams have been developed. Physical aspects of these media are the subject of this paper. A new concept of the Er-doped medium, sensitized with Yb, is illustrated

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Energy-saving approaches to solid state street lighting

Science.gov (United States)

Vitta, Pranciškus; Stanikūnas, Rytis; Tuzikas, Arūnas; Reklaitis, Ignas; Stonkus, Andrius; Petrulis, Andrius; Vaitkevičius, Henrikas; Žukauskas, Artūras

2011-10-01

We consider the energy-saving potential of solid-state street lighting due to improved visual performance, weather sensitive luminance control and tracking of pedestrians and vehicles. A psychophysical experiment on the measurement of reaction time with a decision making task was performed under mesopic levels of illumination provided by a highpressure sodium (HPS) lamp and different solid-state light sources, such as daylight and warm-white phosphor converted light-emitting diodes (LEDs) and red-green-blue LED clusters. The results of the experiment imply that photopic luminances of road surface provided by solid-state light sources with an optimized spectral power distribution might be up to twice as low as those provided by the HPS lamp. Dynamical correction of road luminance against road surface conditions typical of Lithuanian climate was estimated to save about 20% of energy in comparison with constant-level illumination. The estimated energy savings due to the tracking of pedestrians and vehicles amount at least 25% with the cumulative effect of intelligent control of at least 40%. A solid-state street lighting system with intelligent control was demonstrated using a 300 m long test ground consisting of 10 solid-state street luminaires, a meteorological station and microwave motion sensor network operated via power line communication.

Solid-state characterization of the HIV protease inhibitor

CERN Document Server

Kim, Y A

2002-01-01

The LB71350, (3S, 4R)-Epoxy-(5S)-[[N-(1-methylethoxy) carbonyl]-3-(methylsulfonyl)-L-valinyl]amin= o]-N-[2-methyl-(1R)-[(phenyl)carbonyl]propyl-6-phenylhexanamide, is a novel HIV protease inhibitor. Its equilibrium solubility at room temperature was less than 40 mu g/mL. It was speculated that the low aqueous solubility might be due to the high crystalline lattice energy resulting from intermolecular hydrogen bonds. The present study was carried out to learn the solid-state characteristics of LB71350 using analytical methods such as NMR, FT-IR and XRD. sup 1 sup 3 C Solid-state NMR, solution NMR, and FT-IR spectra of the various solid forms of LB71350 were used to identify the conformation and structure of the solid forms. The chemical shifts of sup 1 sup 3 C solid-state NMR spectra suggest that the crystalline form might have 3 intermolecular hydrogen bondings between monomers.

Integrated Interface Strategy toward Room Temperature Solid-State Lithium Batteries.

Science.gov (United States)

Ju, Jiangwei; Wang, Yantao; Chen, Bingbing; Ma, Jun; Dong, Shanmu; Chai, Jingchao; Qu, Hongtao; Cui, Longfei; Wu, Xiuxiu; Cui, Guanglei

2018-04-25

Solid-state lithium batteries have drawn wide attention to address the safety issues of power batteries. However, the development of solid-state lithium batteries is substantially limited by the poor electrochemical performances originating from the rigid interface between solid electrodes and solid-state electrolytes. In this work, a composite of poly(vinyl carbonate) and Li 10 SnP 2 S 12 solid-state electrolyte is fabricated successfully via in situ polymerization to improve the rigid interface issues. The composite electrolyte presents a considerable room temperature conductivity of 0.2 mS cm -1 , an electrochemical window exceeding 4.5 V, and a Li + transport number of 0.6. It is demonstrated that solid-state lithium metal battery of LiFe 0.2 Mn 0.8 PO 4 (LFMP)/composite electrolyte/Li can deliver a high capacity of 130 mA h g -1 with considerable capacity retention of 88% and Coulombic efficiency of exceeding 99% after 140 cycles at the rate of 0.5 C at room temperature. The superior electrochemical performance can be ascribed to the good compatibility of the composite electrolyte with Li metal and the integrated compatible interface between solid electrodes and the composite electrolyte engineered by in situ polymerization, which leads to a significant interfacial impedance decrease from 1292 to 213 Ω cm 2 in solid-state Li-Li symmetrical cells. This work provides vital reference for improving the interface compatibility for room temperature solid-state lithium batteries.

Parity lifetime of bound states in a proximitized semiconductor nanowire

DEFF Research Database (Denmark)

Higginbotham, Andrew Patrick; Albrecht, Sven Marian; Kirsanskas, Gediminas

2015-01-01

Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic...... superconductor layer, yielding an isolated, proximitized nanowire segment. We identify Andreev-like bound states in the semiconductor via bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound...

Solid-state laser engineering

CERN Document Server

Koechner, Walter

1992-01-01

This book is written from an industrial perspective and provides a detailed discussion of solid-state lasers, their characteristics, design and construction. Emphasis is placed on engineering and practical considerations. The book is aimed mainly at the practicing scientist or engineer who is interested in the design or use of solid-state lasers, but the comprehensive treatment of the subject will make the work useful also to students of laser physics who seek to supplement their theoretical knowledge with engineering information. In order to present the subject as clearly as possible, phenomenological descriptions using models have been used rather than abstract mathematical descriptions. This results in a simplified presentation. The descriptions are enhanced by the inclusion of numerical and technical data, tables and graphs. This new edition has been updated and revised to take account of important new developments, concepts, and technologies that have emerged since the publication of the first and second...

Solid state nuclear magnetic resonance of fossil fuels

International Nuclear Information System (INIS)

Axelson, D.E.

1985-01-01

This book contains the following chapters: Principles of solid state NMR; Relaxation processes: Introduction to pulse sequences; Quantitative analysis; Removal of artifacts from CPMAS FT experiments; Line broadening mechanisms; Resolution enhancement of solid state NMR spectra; and /sup 13/C CPMAS NMR of fossil fuels--general applications

Optical switching of nuclear spin-spin couplings in semiconductors.

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-07-05

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear-spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings.

Optical switching of nuclear spin–spin couplings in semiconductors

Science.gov (United States)

Goto, Atsushi; Ohki, Shinobu; Hashi, Kenjiro; Shimizu, Tadashi

2011-01-01

Two-qubit operation is an essential part of quantum computation. However, solid-state nuclear magnetic resonance quantum computing has not been able to fully implement this functionality, because it requires a switchable inter-qubit coupling that controls the time evolutions of entanglements. Nuclear dipolar coupling is beneficial in that it is present whenever nuclear–spin qubits are close to each other, while it complicates two-qubit operation because the qubits must remain decoupled to prevent unwanted couplings. Here we introduce optically controllable internuclear coupling in semiconductors. The coupling strength can be adjusted externally through light power and even allows on/off switching. This feature provides a simple way of switching inter-qubit couplings in semiconductor-based quantum computers. In addition, its long reach compared with nuclear dipolar couplings allows a variety of options for arranging qubits, as they need not be next to each other to secure couplings. PMID:21730962

Compact, diode-pumped, solid-state lasers for next generation defence and security sensors

Science.gov (United States)

Silver, M.; Lee, S. T.; Borthwick, A.; McRae, I.; Jackson, D.; Alexander, W.

2015-06-01

Low-cost semiconductor laser diode pump sources have made a dramatic impact in sectors such as advanced manufacturing. They are now disrupting other sectors, such as defence and security (D&S), where Thales UK is a manufacturer of sensor systems for application on land, sea, air and man portable. In this talk, we will first give an overview of the market trends and challenges in the D&S sector. Then we will illustrate how low cost pump diodes are enabling new directions in D&S sensors, by describing two diode pumped, solid- state laser products currently under development at Thales UK. The first is a new generation of Laser Target Designators (LTD) that are used to identify targets for the secure guiding of munitions. Current systems are bulky, expensive and require large battery packs to operate. The advent of low cost diode technology, merged with our novel solid-state laser design, has created a designator that will be the smallest, lowest cost, STANAG compatible laser designator on the market. The LTD delivers greater that 50mJ per pulse up to 20Hz, and has compact dimensions of 125×70×55mm. Secondly, we describe an ultra-compact, eye-safe, solid-state laser rangefinder (LRF) with reduced size, weight and power consumption compared to existing products. The LRF measures 100×55×34mm, weighs 200g, and can range to greater than 10km with a single laser shot and at a reprate of 1Hz. This also leverages off advances in laser pump diodes, but also utilises low cost, high reliability, packaging technology commonly found in the telecoms sector. As is common in the D&S sector, the products are designed to work in extreme environments, such as wide temperature range (-40 to +71°C) and high levels of shock and vibration. These disruptive products enable next- generation laser sensors such as rangefinders, target designators and active illuminated imagers.

Advances in Solid State Physics

CERN Document Server

Haug, Rolf

2007-01-01

The present volume 46 of Advances in Solid State Physics contains the written versions of selected invited lectures from the spring meeting of the Arbeitskreis Festkörperphysik of the Deutsche Physikalische Gesellschaft which was held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given at the numerous symposia are included. Most of these were organized collaboratively by several of the divisions of the Arbeitskreis. The topis range from zero-dimensional physics in quantum dots, molecules and nanoparticles over one-dimensional physics in nanowires and 1d systems to more applied subjects like optoelectronics and materials science in thin films. The contributions span the whole width of solid-state physics from truly basic science to applications.

Laser solid sampling for a solid-state-detector ICP emission spectrometer

International Nuclear Information System (INIS)

Noelte, J.; Moenke-Blankenburg, L.; Schumann, T.

1994-01-01

Solid sampling with laser vaporization has been coupled to an ICP emission spectrometer with an Echelle optical system and a solid-state-detector for the analysis of steel and soil samples. Pulsation of the vaporized material flow was compensated by real-time background correction and internal standardization, resulting in good accuracy and precision. (orig.)

An extrapolation scheme for solid-state NMR chemical shift calculations

Science.gov (United States)

Nakajima, Takahito

2017-06-01

Conventional quantum chemical and solid-state physical approaches include several problems to accurately calculate solid-state nuclear magnetic resonance (NMR) properties. We propose a reliable computational scheme for solid-state NMR chemical shifts using an extrapolation scheme that retains the advantages of these approaches but reduces their disadvantages. Our scheme can satisfactorily yield solid-state NMR magnetic shielding constants. The estimated values have only a small dependence on the low-level density functional theory calculation with the extrapolation scheme. Thus, our approach is efficient because the rough calculation can be performed in the extrapolation scheme.

Phosphate phosphors for solid-state lighting

Energy Technology Data Exchange (ETDEWEB)

Shinde, Kartik N. [N.S. Science and Arts College, Bhadrawati (India). Dept. of Physics; Swart, H.C. [University of the Orange Free State, Bloemfontein (South Africa). Dept. of Physics; Dhoble, S.J. [R.T.M. Nagpur Univ. (India). Dept. of Physics; Park, Kyeongsoon [Sejong Univ., Seoul (Korea, Republic of). Faculty of Nanotechnology and Advanced Materials Engineering

2012-07-01

Essential information for students in researchers working towards new and more efficient solid-state lighting. Comprehensive survey based on the authors' long experience. Useful both for teaching and reference. The idea for this book arose out of the realization that, although excellent surveys and a phosphor handbook are available, there is no single source covering the area of phosphate based phosphors especially for lamp industry. Moreover, as this field gets only limited attention in most general books on luminescence, there is a clear need for a book in which attention is specifically directed toward this rapidly growing field of solid state lighting and its many applications. This book is aimed at providing a sound introduction to the synthesis and optical characterization of phosphate phosphor for undergraduate and graduate students as well as teachers and researchers. The book provides guidance through the multidisciplinary field of solid state lighting specially phosphate phosphors for beginners, scientists and engineers from universities, research organizations, and especially industry. In order to make it useful for a wide audience, both fundamentals and applications are discussed, together.

A software framework for analysing solid-state MAS NMR data

International Nuclear Information System (INIS)

Stevens, Tim J.; Fogh, Rasmus H.; Boucher, Wayne; Higman, Victoria A.; Eisenmenger, Frank; Bardiaux, Benjamin; Rossum, Barth-Jan van; Oschkinat, Hartmut; Laue, Ernest D.

2011-01-01

Solid-state magic-angle-spinning (MAS) NMR of proteins has undergone many rapid methodological developments in recent years, enabling detailed studies of protein structure, function and dynamics. Software development, however, has not kept pace with these advances and data analysis is mostly performed using tools developed for solution NMR which do not directly address solid-state specific issues. Here we present additions to the CcpNmr Analysis software package which enable easier identification of spinning side bands, straightforward analysis of double quantum spectra, automatic consideration of non-uniform labelling schemes, as well as extension of other existing features to the needs of solid-state MAS data. To underpin this, we have updated and extended the CCPN data model and experiment descriptions to include transfer types and nomenclature appropriate for solid-state NMR experiments, as well as a set of experiment prototypes covering the experiments commonly employed by solid-sate MAS protein NMR spectroscopists. This work not only improves solid-state MAS NMR data analysis but provides a platform for anyone who uses the CCPN data model for programming, data transfer, or data archival involving solid-state MAS NMR data.

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Review on solid electrolytes for all-solid-state lithium-ion batteries

Science.gov (United States)

Zheng, Feng; Kotobuki, Masashi; Song, Shufeng; Lai, Man On; Lu, Li

2018-06-01

All-solid-state (ASS) lithium-ion battery has attracted great attention due to its high safety and increased energy density. One of key components in the ASS battery (ASSB) is solid electrolyte that determines performance of the ASSB. Many types of solid electrolytes have been investigated in great detail in the past years, including NASICON-type, garnet-type, perovskite-type, LISICON-type, LiPON-type, Li3N-type, sulfide-type, argyrodite-type, anti-perovskite-type and many more. This paper aims to provide comprehensive reviews on some typical types of key solid electrolytes and some ASSBs, and on gaps that should be resolved.

2D {sup 31}P solid state NMR spectroscopy, electronic structure and thermochemistry of PbP{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Benndorf, Christopher [Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstraße 30, 48149 Münster (Germany); Institut für Physikalische Chemie, Universität Münster, Corrensstraße 30, 48149 Münster (Germany); Hohmann, Andrea; Schmidt, Peer [Brandenburgische Technische Universität Cottbus-Senftenberg, Fakultät für Naturwissenschaften, Postfach 101548, 01958 Senftenberg (Germany); Eckert, Hellmut, E-mail: eckerth@uni-muenster.de [Institut für Physikalische Chemie, Universität Münster, Corrensstraße 30, 48149 Münster (Germany); Instituto de Física de Sao Carlos, Universidade de Sao Paulo, CEP 369, Sao Carlos, SP 13560-590 (Brazil); Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universität München, Butenandtstraße 5-13, D-81377 München (Germany); and others

2016-03-15

Phase pure polycrystalline PbP{sub 7} was prepared from the elements via a lead flux. Crystalline pieces with edge-lengths up to 1 mm were obtained. The assignment of the previously published {sup 31}P solid state NMR spectrum to the seven distinct crystallographic sites was accomplished by radio-frequency driven dipolar recoupling (RFDR) experiments. As commonly found in other solid polyphosphides there is no obvious correlation between the {sup 31}P chemical shift and structural parameters. PbP{sub 7} decomposes incongruently under release of phosphorus forming liquid lead as remainder. The thermal decomposition starts at T>550 K with a vapor pressure almost similar to that of red phosphorus. Electronic structure calculations reveal PbP{sub 7} as a semiconductor according to the Zintl description and clearly shows the stereo-active Pb-6s{sup 2} lone pairs in the electron localization function ELF. - Graphical abstract: Coordination of the lead atoms in PbP{sub 7}.

Conductors, semiconductors, superconductors. A compact introduction to history, development, and theory of solid-state physics. 2. ed.

International Nuclear Information System (INIS)

Huebener, Rudolf

2017-01-01

The present book is a strongly revised and supplemented edition of the title: ''Kristalle: Spiefeld der Elektronen'', published scarcely ten years ago by the same author. Especially the physical contents are explained by the mathematically formulated foundations. The book appeals to students of natural sciences and especially of physics as well as to engineers as introduction to the wide field of solid-state physics, so to speak as motivating prestage to the established and very extensive textbooks. Beside the physical contents the book treats the important role of numerous important and often still very young scientists. By corresponding supplements in this book it is tried to present the fundamental developments in their wide environment.

Design and Characterisation of Solid Electrolytes for All-Solid-State Lithium Batteries

DEFF Research Database (Denmark)

Sveinbjörnsson, Dadi Þorsteinn

The development of all-solid-state lithium batteries, in which the currently used liquid electrolytes are substituted for solid electrolyte materials, could lead to safer batteries offering higher energy densities and longer cycle lifetimes. Designing suitable solid electrolytes with sufficient...... chemical and electrochemical stability, high lithium ion conduction and negligible electronic conduction remains a challenge. The highly lithium ion conducting LiBH4-LiI solid solution is a promising solid electrolyte material. Solid solutions with a LiI content of 6.25%-50% were synthesised by planetary......-rich microstructures during ball milling is found to significantly influence the conductivity of the samples. The long-range diffusion of lithium ions was measured using quasi-elastic neutron scattering. The solid solutions are found to exhibit two-dimensional conduction in the hexagonal plane of the crystal structure...

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Solid state physics principles and modern applications

CERN Document Server

Quinn, John J

2018-01-01

This book provides the basis for a two-semester graduate course on solid-state physics. The first half presents all the knowledge necessary for a one-semester survey of solid-state physics, but in greater depth than most introductory solid state physics courses. The second half includes most of the important research over the past half-century, covering both the fundamental principles and most recent advances. This new edition includes the latest developments in the treatment of strongly interacting two-dimensional electrons and discusses the generalization from small to larger systems. The book provides explanations in a class-tested tutorial style, and each chapter includes problems reviewing key concepts and calculations. The updated exercises and solutions enable students to become familiar with contemporary research activities, such as the electronic properties of massless fermions in graphene and topological insulators.

Electron transfer reactions in microporous solids

Energy Technology Data Exchange (ETDEWEB)

Mallouk, T.E.

1993-01-01

Basic thrust the research program involves use of microporous solids (zeolites, clays, layered and tunnel structure oxide semiconductors) as organizing media for artificial photosynthetic systems. Purpose of the microporous solid is twofold. First, it induces spatial organization of photoactive and electroactive components (sensitizers, semiconductor particles, electron relays, and catalysts) at the solid-solution interface, enhancing the quantum efficiency of charge separation and separating physically the ultimate electron donor and acceptor in the electron transport chain. Second, since the microcrystalline solid admits only molecules of a certain charge and size, it is possible to achieve permanent charge separation by sieving chemical photoproducts (e.g., H[sub 2] and I[sub 3][sup [minus

Solid-state resistor for pulsed power machines

Science.gov (United States)

Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas; Fowler, William E.; MacRunnels, Keven Alan; Justus, David; Stygar, William A.

2016-12-06

A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

Expandable Polymer Enabled Wirelessly Destructible High-Performance Solid State Electronics

KAUST Repository

Gumus, Abdurrahman; Alam, Arsalan; Hussain, Aftab M.; Mishra, Kush; Wicaksono, Irmandy; Sevilla, Galo T.; Shaikh, Sohail F.; Diaz, Marlon; Velling, Seneca; Ghoneim, Mohamed T.; Ahmed, Sally; Hussain, Muhammad Mustafa

2017-01-01

In today's digital age, the increasing dependence on information also makes us vulnerable to potential invasion of privacy and cyber security. Consider a scenario in which a hard drive is stolen, lost, or misplaced, which contains secured and valuable information. In such a case, it is important to have the ability to remotely destroy the sensitive part of the device (e.g., memory or processor) if it is not possible to regain it. Many emerging materials and even some traditional materials like silicon, aluminum, zinc oxide, tungsten, and magnesium, which are often used for logic processor and memory, show promise to be gradually dissolved upon exposure of various liquid medium. However, often these wet processes are too slow, fully destructive, and require assistance from the liquid materials and their suitable availability at the time of need. This study shows Joule heating effect induced thermal expansion and stress gradient between thermally expandable advanced polymeric material and flexible bulk monocrystalline silicon (100) to destroy high-performance solid state electronics as needed and under 10 s. This study also shows different stimuli-assisted smartphone-operated remote destructions of such complementary metal oxide semiconductor electronics.

Hybrid integrated biological-solid-state system powered with adenosine triphosphate.

Science.gov (United States)

Roseman, Jared M; Lin, Jianxun; Ramakrishnan, Siddharth; Rosenstein, Jacob K; Shepard, Kenneth L

2015-12-07

There is enormous potential in combining the capabilities of the biological and the solid state to create hybrid engineered systems. While there have been recent efforts to harness power from naturally occurring potentials in living systems in plants and animals to power complementary metal-oxide-semiconductor integrated circuits, here we report the first successful effort to isolate the energetics of an electrogenic ion pump in an engineered in vitro environment to power such an artificial system. An integrated circuit is powered by adenosine triphosphate through the action of Na(+)/K(+) adenosine triphosphatases in an integrated in vitro lipid bilayer membrane. The ion pumps (active in the membrane at numbers exceeding 2 × 10(6) mm(-2)) are able to sustain a short-circuit current of 32.6 pA mm(-2) and an open-circuit voltage of 78 mV, providing for a maximum power transfer of 1.27 pW mm(-2) from a single bilayer. Two series-stacked bilayers provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemical to electrical energy of 14.9%.

The physics of solid-state neutron detector materials and geometries.

Science.gov (United States)

Caruso, A N

2010-11-10

Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

Expandable Polymer Enabled Wirelessly Destructible High-Performance Solid State Electronics

KAUST Repository

Gumus, Abdurrahman

2017-03-29

In today\\'s digital age, the increasing dependence on information also makes us vulnerable to potential invasion of privacy and cyber security. Consider a scenario in which a hard drive is stolen, lost, or misplaced, which contains secured and valuable information. In such a case, it is important to have the ability to remotely destroy the sensitive part of the device (e.g., memory or processor) if it is not possible to regain it. Many emerging materials and even some traditional materials like silicon, aluminum, zinc oxide, tungsten, and magnesium, which are often used for logic processor and memory, show promise to be gradually dissolved upon exposure of various liquid medium. However, often these wet processes are too slow, fully destructive, and require assistance from the liquid materials and their suitable availability at the time of need. This study shows Joule heating effect induced thermal expansion and stress gradient between thermally expandable advanced polymeric material and flexible bulk monocrystalline silicon (100) to destroy high-performance solid state electronics as needed and under 10 s. This study also shows different stimuli-assisted smartphone-operated remote destructions of such complementary metal oxide semiconductor electronics.

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

Science.gov (United States)

Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

1981-01-01

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

International Nuclear Information System (INIS)

Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

2008-01-01

Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

Solid-state dependent dissolution and oral bioavailability of piroxicam in rats.

Science.gov (United States)

Lust, Andres; Laidmäe, Ivo; Palo, Mirja; Meos, Andres; Aaltonen, Jaakko; Veski, Peep; Heinämäki, Jyrki; Kogermann, Karin

2013-01-23

The aim of this study was to gain understanding about the effects of different solid-state forms of a poorly water-soluble piroxicam on drug dissolution and oral bioavailability in rats. Three different solid-state forms of piroxicam were studied: anhydrate I (AH), monohydrate (MH), and amorphous form in solid dispersion (SD). In addition, the effect of a new polymeric excipient Soluplus® (polyvinyl caprolactam-polyvinyl acetate-polyethylene glycol graft copolymer) on oral bioavailability of piroxicam was investigated. Significant differences in the dissolution and oral bioavailability were found between the solid-state forms of piroxicam. Amorphous piroxicam in SD showed the fastest dissolution in vitro and a solid-state transformation to MH in the dissolution medium. Despite the presence of solid-state transformation, SD exhibited the highest rate and extent of oral absorption in rats. Oral bioavailability of other two solid-state forms decreased in the order AH and MH. The use of Soluplus® was found to enhance the dissolution and oral bioavailability of piroxicam in rats. The present study shows the importance of solid-state form selection for oral bioavailability of a poorly water-soluble drug. Copyright © 2012 Elsevier B.V. All rights reserved.

Solid-state Marx based two-switch voltage modulator for the On-Line Isotope Mass Separator accelerator at the European Organization for Nuclear Research.

Science.gov (United States)

Redondo, L M; Silva, J Fernando; Canacsinh, H; Ferrão, N; Mendes, C; Soares, R; Schipper, J; Fowler, A

2010-07-01

A new circuit topology is proposed to replace the actual pulse transformer and thyratron based resonant modulator that supplies the 60 kV target potential for the ion acceleration of the On-Line Isotope Mass Separator accelerator, the stability of which is critical for the mass resolution downstream separator, at the European Organization for Nuclear Research. The improved modulator uses two solid-state switches working together, each one based on the Marx generator concept, operating as series and parallel switches, reducing the stress on the series stacked semiconductors, and also as auxiliary pulse generator in order to fulfill the target requirements. Preliminary results of a 10 kV prototype, using 1200 V insulated gate bipolar transistors and capacitors in the solid-state Marx circuits, ten stages each, with an electrical equivalent circuit of the target, are presented, demonstrating both the improved voltage stability and pulse flexibility potential wanted for this new modulator.

Development of diode-pumped medical solid-state lasers

International Nuclear Information System (INIS)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively

Development of diode-pumped medical solid-state lasers

Energy Technology Data Exchange (ETDEWEB)

Kim, Cheol Jung; Kim, Min Suk

2000-09-01

Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively.

Flow-Solution-Liquid-Solid Growth of Semiconductor Nanowires: A Novel Approach for Controlled Synthesis

Energy Technology Data Exchange (ETDEWEB)

Hollingsworth, Jennifer A. [Los Alamos National Laboratory; Palaniappan, Kumaranand [Los Alamos National Laboratory; Laocharoensuk, Rawiwan [National Science and Technology Center, Thailand; Smith, Nickolaus A. [Los Alamos National Laboratory; Dickerson, Robert M. [Los Alamos National Laboratory; Casson, Joanna L. [Los Alamos National Laboratory; Baldwin, Jon K. [Los Alamos National Laboratory

2012-06-07

Semiconductor nanowires (SC-NWs) have potential applications in diverse technologies from nanoelectronics and photonics to energy harvesting and storage due to their quantum-confined opto-electronic properties coupled with their highly anisotropic shape. Here, we explore new approaches to an important solution-based growth method known as solution-liquid-solid (SLS) growth. In SLS, molecular precursors are reacted in the presence of low-melting metal nanoparticles that serve as molten fluxes to catalyze the growth of the SC-NWs. The mechanism of growth is assumed to be similar to that of vapor-liquid-solid (VLS) growth, with the clear distinctions of being conducted in solution in the presence of coordinating ligands and at relatively lower temperatures (<300 C). The resultant SC-NWs are soluble in common organic solvents and solution processable, offering advantages such as simplified processing, scale-up, ultra-small diameters for quantum-confinement effects, and flexible choice of materials from group III-V to groups II-VI, IV-VI, as well as truly ternary I-III-VI semiconductors as we recently demonstrates. Despite these advantages of SLS growth, VLS offers several clear opportunities not allowed by conventional SLS. Namely, VLS allows sequential addition of precursors for facile synthesis of complex axial heterostructures. In addition, growth proceeds relatively slowly compared to SLS, allowing clear assessments of growth kinetics. In order to retain the materials and processing flexibility afforded by SLS, but add the elements of controlled growth afforded by VLS, we transformed SLS into a flow based method by adapting it to synthesis in a microfluidic system. By this new method - so-called 'flow-SLS' (FSLS) - we have now demonstrated unprecedented fabrication of multi-segmented SC-NWs, e.g., 8-segmented CdSe/ZnSe defined by either compositionally abrupt or alloyed interfaces as a function of growth conditions. In addition, we have studied growth

On-demand semiconductor single-photon source with near-unity indistinguishability.

Science.gov (United States)

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

All solid-state SBS phase conjugate mirror

Science.gov (United States)

Dane, C.B.; Hackel, L.A.

1999-03-09

A stimulated Brillouin scattering (SBS) phase conjugate laser mirror uses a solid-state nonlinear gain medium instead of the conventional liquid or high pressure gas medium. The concept has been effectively demonstrated using common optical-grade fused silica. An energy threshold of 2.5 mJ and a slope efficiency of over 90% were achieved, resulting in an overall energy reflectivity of >80% for 15 ns, 1 um laser pulses. The use of solid-state materials is enabled by a multi-pass resonant architecture which suppresses transient fluctuations that would otherwise result in damage to the SBS medium. This all solid state phase conjugator is safer, more reliable, and more easily manufactured than prior art designs. It allows nonlinear wavefront correction to be implemented in industrial and defense laser systems whose operating environments would preclude the introduction of potentially hazardous liquids or high pressure gases. 8 figs.

Mechanical Properties of Organic Semiconductors for Stretchable, Highly Flexible, and Mechanically Robust Electronics.

Science.gov (United States)

Root, Samuel E; Savagatrup, Suchol; Printz, Adam D; Rodriquez, Daniel; Lipomi, Darren J

2017-05-10

Mechanical deformability underpins many of the advantages of organic semiconductors. The mechanical properties of these materials are, however, diverse, and the molecular characteristics that permit charge transport can render the materials stiff and brittle. This review is a comprehensive description of the molecular and morphological parameters that govern the mechanical properties of organic semiconductors. Particular attention is paid to ways in which mechanical deformability and electronic performance can coexist. The review begins with a discussion of flexible and stretchable devices of all types, and in particular the unique characteristics of organic semiconductors. It then discusses the mechanical properties most relevant to deformable devices. In particular, it describes how low modulus, good adhesion, and absolute extensibility prior to fracture enable robust performance, along with mechanical "imperceptibility" if worn on the skin. A description of techniques of metrology precedes a discussion of the mechanical properties of three classes of organic semiconductors: π-conjugated polymers, small molecules, and composites. The discussion of each class of materials focuses on molecular structure and how this structure (and postdeposition processing) influences the solid-state packing structure and thus the mechanical properties. The review concludes with applications of organic semiconductor devices in which every component is intrinsically stretchable or highly flexible.

Optical generation and control of quantum coherence in semiconductor nanostructures

CERN Document Server

Slavcheva, Gabriela

2010-01-01

The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

Solid state fermentation studies of citric acid production

African Journals Online (AJOL)

SERVER

2008-03-04

Mar 4, 2008 ... solid waste management, biomass energy conservation, production of high value products and little risk ... The carrier, sugarcane bagasse for solid state fermentation was procured from National Sugar Institute ... constant weight and designated as dry solid residue (DSR). The filtrate (consisting of biomass, ...

Nanocrystalline spinel ferrites by solid state reaction route

Indian Academy of Sciences (India)

Wintec

Nanocrystalline spinel ferrites by solid state reaction route. T K KUNDU* and S MISHRA. Department of Physics, Visva-Bharati, Santiniketan 731 235, India. Abstract. Nanostructured NiFe2O4, MnFe2O4 and (NiZn)Fe2O4 were synthesized by aliovalent ion doping using conventional solid-state reaction route. With the ...

Nonlinear Elasticity of Doped Semiconductors

Science.gov (United States)

2017-02-01

AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Semiconductor micro cavities: half light, half matter

International Nuclear Information System (INIS)

Baumberg, Jeremy J.

2003-01-01

Quantum wells sandwiched tightly between two mirrors can be used to make a new type of laser that can amplify light more than any other known material. What do you get if you cross light with matter? It is a question that fascinates today's researchers in quantum optoelectronics, who want to see how far the physical states of the world can be intertwined. Although we have a good understanding of the quantum ingredients of optics and solids - photons and atoms - it turns out that assembling these building blocks in deliberately unfamiliar ways can lead to what is new and often quite unexpected behaviour. Consider 'quantum wells', which form the basis of modern semiconductor lasers. First developed in the 1980s, they lie at the heart of optical-communication and optical-storage technologies such as DVD players and they now have a global market of over 10bn British Pounds. Quantum wells consist of a thin sheet of crystalline semiconductor sandwiched between two sheets of another semiconductor. The outer layers squash the wavefunctions of electrons within the central sheet, increasing the electrons' energy and their interaction with light. Engineers can control the colour of the light emitted by the laser simply by adjusting the energy levels within the central sheet, which acts as a potential well. But this bug-sized playground for electrons has not just had technological ramifications. It has also spawned an enormous variety of new physics, including the quantum Hall effect, which can be used as a fundamental standard for measuring the ratio between the charge on the electron and the Planck constant. Over the last ten years researchers have also become increasingly keen to incorporate quantum wells into what are known as 'semiconductor micro cavities'. Physicists have found that these painstakingly layered materials can be used to create new quantum states that resemble superfluids and can be used in interferometric quantum devices. In the March issue of Physics

Preliminary field evaluation of solid state cameras for security applications

International Nuclear Information System (INIS)

Murray, D.W.

1987-01-01

Recent developments in solid state imager technology have resulted in a series of compact, lightweight, all-solid-state closed circuit television (CCTV) cameras. Although it is widely known that the various solid state cameras have less light sensitivity and lower resolution than their vacuum tube counterparts, the potential for having a much longer Mean Time Between Failure (MTBF) for the all-solid-state cameras is generating considerable interest within the security community. Questions have been raised as to whether the newest and best of the solid state cameras are a viable alternative to the high maintenance vacuum tube cameras in exterior security applications. To help answer these questions, a series of tests were performed by Sandia National Laboratories at various test sites and under several lighting conditions. The results of these tests as well as a description of the test equipment, test sites, and procedures are presented in this report

X-ray absorption spectroscopy of semiconductors

CERN Document Server

Ridgway, Mark

2015-01-01

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

Elastic constants of nanoporous III-V semiconductors

Czech Academy of Sciences Publication Activity Database

Janovská, Michaela; Sedlák, Petr; Kruisová, Alena; Seiner, Hanuš; Landa, Michal; Grym, Jan

2015-01-01

Roč. 48, č. 24 (2015) ISSN 0022-3727 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 ; RVO:67985882 Keywords : nanoporous semiconductors * resonant ultrasound spectroscopy * finite elements modelling Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (URE-Y) Impact factor: 2.772, year: 2015 http://iopscience.iop.org/0022-3727/48/24/245102/article

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam

2017-05-11

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam; McNellis, Erik R.; Nielsen, Christian B.; Chen, Hung-Yang; Watanabe, Shun; Tanaka, Hisaaki; McCulloch, Iain; Takimiya, Kazuo; Sinova, Jairo; Sirringhaus, Henning

2017-01-01

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Two-color mid-infrared spectroscopy of optically doped semiconductors

International Nuclear Information System (INIS)

Forcales, M.; Klik, M.A.J.; Vinh, N.Q.; Phillips, J.; Wells, J-P.R.; Gregorkiewicz, T.

2003-01-01

Optical doping is an attractive method to tailor photonic properties of semiconductor matrices for development of solid-state electroluminescent structures. For practical applications, thermal stability of emission obtained from these materials is required. Thermal processes can be conveniently investigated by two-color spectroscopy in the visible and the mid-infrared. Free-electron laser is a versatile high-brilliance source of radiation in the latter spectral range. In this contribution, we briefly review some of the results obtained recently by the two-color spectroscopy with a free-electron laser in different semiconductors optically doped with rare earth and transition metal ions. Effects leading to both enhancement and quenching of emission from optical dopants will be presented. For InP:Yb, Si:Er, and Si:Cu activation of particular optically induced non-radiative recombination paths will be shown. For Si:Er and Si:Ag, observation of a low temperature optical memory effect will be reported

Second International Conference on Neutron Transmutation Doping in Semiconductors

CERN Document Server

Neutron Transmutation Doping in Semiconductors

1979-01-01

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con­ ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 perso...

Research on IGBT solid state switch

CERN Document Server

Gan Kong Yin; Wang Xiao Feng; Wang Lang Ping; Wang Song Yan; Chu, P K; Wu Hong Chen

2002-01-01

The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2 kV, 75 A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistors, capacities and diodes in order to suppress the over-voltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8 kV, rise time 300 ns, fall time 1.64 mu s waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time

Research on IGBT solid state switch

International Nuclear Information System (INIS)

Gan Kongyin; Tang Baoyin; Wang Xiaofeng; Wang Langping; Wang Songyan; Wu Hongchen

2002-01-01

The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2 kV, 75 A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistors, capacities and diodes in order to suppress the over-voltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8 kV, rise time 300 ns, fall time 1.64 μs waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time

Handbook of Applied Solid State Spectroscopy

CERN Document Server

Vij, D. R

2006-01-01

Solid-State spectroscopy is a burgeoning field with applications in many branches of science, including physics, chemistry, biosciences, surface science, and materials science. Handbook of Applied Solid-State Spectroscopy brings together in one volume information about various spectroscopic techniques that is currently scattered in the literature of these disciplines. This concise yet comprehensive volume covers theory and applications of a broad range of spectroscopies, including NMR, NQR, EPR/ESR, ENDOR, scanning tunneling, acoustic resonance, FTIR, auger electron emission, x-ray photoelectron emission, luminescence, and optical polarization, and more. Emphasis is placed on fundamentals and current methods and procedures, together with the latest applications and developments in the field.

Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

Directory of Open Access Journals (Sweden)

E. Kalesaki

2014-01-01

Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

Uses of solid state analogies in elementary particle theory

International Nuclear Information System (INIS)

Anderson, P.W.

1976-01-01

The solid state background of some of the modern ideas of field theory is reviewed, and additional examples of model situations in solid state or many-body theory which may have relevance to fundamental theories of elementary particles are adduced

Transire, a Program for Generating Solid-State Interface Structures

Science.gov (United States)

2017-09-14

ARL-TR-8134 ● SEP 2017 US Army Research Laboratory Transire, a Program for Generating Solid-State Interface Structures by...Program for Generating Solid-State Interface Structures by Caleb M Carlin and Berend C Rinderspacher Weapons and Materials Research Directorate, ARL...

Theory of two-photon absorption by exciton states in cubic semiconductors with degenerate valence bands

International Nuclear Information System (INIS)

Nguyen Ai Viet; Nguyen Toan Thang.

1987-06-01

The coefficient of the absorption of two polarized photons is calculated for direct band gap semiconductors with degenerate valence bands. Wannier-Mott exciton states are included in both the intermediate and final states. Numerical calculations are performed for ZnSe and are compared with Sondergeld's experimental and theoretical results. (author). 11 refs, 2 tabs

Collective spin fluctuations in diluted magnetic semiconductors

Czech Academy of Sciences Publication Activity Database

König, J.; Schliemann, J.; Jungwirth, Tomáš; MacDonald, A. H.

2002-01-01

Roč. 12, - (2002), s. 379-382 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : spin fluctuation * magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2002

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

2003-01-01

Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

IFE Power Plant design principles. Drivers. Solid state laser drivers

International Nuclear Information System (INIS)

Nakai, S.; Andre, M.; Krupke, W.F.; Mak, A.A.; Soures, J.M.; Yamanaka, M.

1995-01-01

The present status of solid state laser drivers for an inertial confinement thermonuclear fusion power plant is discussed. In particular, the feasibility of laser diode pumped solid state laser drivers from both the technical and economic points of view is briefly reviewed. Conceptual design studies showed that they can, in principle, satisfy the design requirements. However, development of new solid state materials with long fluorescence lifetimes and good thermal characteristics is a key issue for laser diode pumped solid state lasers. With the advent of laser diode pumping many materials which were abandoned in the past can presently be reconsidered as viable candidates. It is also concluded that it is important to examine the technical requirements for solid state lasers in relation to target performance criteria. The progress of laser diode pumped lasers in industrial applications should also be closely watched to provide additional information on the economic feasibility of this type of driver. 15 refs, 9 figs, 2 tabs

Potential of solid state fermentation for production of ergot alkaloids

OpenAIRE

Trejo Hernandez, M.R.; Raimbault, Maurice; Roussos, Sevastianos; Lonsane, B.K.

1992-01-01

Production of total ergot alkaloids by #Claviceps fusiformis$ in solid state fermentation was 3.9 times higher compared to that in submerged fermentation. Production was equal in the case of #Claviceps purpurea$ but the spectra of alkaloids were advantageous with the use of solid state fermentation. The data establish potential of solid state fermentation which was not explored earlier for production of ergot alkaloids. (Résumé d'auteur)

Solvent vapor annealing of an insoluble molecular semiconductor

KAUST Repository

Amassian, Aram

2010-01-01

Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

Solid State Neutron Detector - A Review of Status

International Nuclear Information System (INIS)

Mukhopadhyay, Sanjoy

2010-01-01

The PowerPoint presentation was organized into the following areas: Driving forces behind research in semiconductor neutron devices; The (sup 3)He shortage crisis; Alternative detectors for neutron; Semiconductor diodes coated with boron; Perforated semiconductors for neutron detection; and, Three dimensional pillar and trench structured semiconductors.

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Development of the plastic solid-dye cell for tunable solid-state dye lasers and study on its optical properties

Energy Technology Data Exchange (ETDEWEB)

Ko, Do Kyeong; Lee, Jong Min; Cha, Byung Heon; Jung, E. C.; Kim, Hyun Su; Lim, Gwon

2001-01-01

we have fabricated solid-state dyes with PMMA and sol-gel materials. We developed single longitudianl mode solid-state dye laser with the linewidth of less than 500MHz. We have constructed a self-seeded laser and observed the increase of the output power because of self-seeding effect. We investigated the operating characteristics of the dualwave laser oscillator and DFDL with solid-state dyes. And we have constructed the 3-color solid-state dye laser oscillator and amplifier system and observed 3-color operation. We also improved the laser oscliiator with disk-type solid-state dye cell which can be translated and rotated with the help of the two stepping motors. With the help of computer control, we could constantly changed the illuminated area of the dye cell and, therefore, were able to achieve long time operation and to use almost the entire region of the solid-state dye cell.

Radiation sensitive solid state devices

International Nuclear Information System (INIS)

Shannon, J.M.; Ralph, J.E.

1975-01-01

A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections. (auth)

Using reweighting and free energy surface interpolation to predict solid-solid phase diagrams

Science.gov (United States)

Schieber, Natalie P.; Dybeck, Eric C.; Shirts, Michael R.

2018-04-01

Many physical properties of small organic molecules are dependent on the current crystal packing, or polymorph, of the material, including bioavailability of pharmaceuticals, optical properties of dyes, and charge transport properties of semiconductors. Predicting the most stable crystalline form at a given temperature and pressure requires determining the crystalline form with the lowest relative Gibbs free energy. Effective computational prediction of the most stable polymorph could save significant time and effort in the design of novel molecular crystalline solids or predict their behavior under new conditions. In this study, we introduce a new approach using multistate reweighting to address the problem of determining solid-solid phase diagrams and apply this approach to the phase diagram of solid benzene. For this approach, we perform sampling at a selection of temperature and pressure states in the region of interest. We use multistate reweighting methods to determine the reduced free energy differences between T and P states within a given polymorph and validate this phase diagram using several measures. The relative stability of the polymorphs at the sampled states can be successively interpolated from these points to create the phase diagram by combining these reduced free energy differences with a reference Gibbs free energy difference between polymorphs. The method also allows for straightforward estimation of uncertainties in the phase boundary. We also find that when properly implemented, multistate reweighting for phase diagram determination scales better with the size of the system than previously estimated.

Atomistic Simulation of Interfaces in Materials of Solid State Ionics

Science.gov (United States)

Ivanov-Schitz, A. K.; Mazo, G. N.

2018-01-01

The possibilities of describing correctly interfaces of different types in solids within a computer experiment using molecular statics simulation, molecular dynamics simulation, and quantum chemical calculations are discussed. Heterophase boundaries of various types, including grain boundaries and solid electrolyte‒solid electrolyte and ionic conductor‒electrode material interfaces, are considered. Specific microstructural features and mechanisms of the ion transport in real heterophase structures (cationic conductor‒metal anode and anionic conductor‒cathode) existing in solid state ionics devices (such as solid-state batteries and fuel cells) are discussed.

Structural, optical, and magnetic properties of polycrystalline Co-doped TiO{sub 2} synthesized by solid-state method

Energy Technology Data Exchange (ETDEWEB)

Bouaine, Abdelhamid, E-mail: abdelhamidfethi@yahoo.fr [Laboratoire d' Etude des Materiaux (LEM), Departement de Physique, Faculte des Sciences Exactes et des Sciences de la Nature et de la vie, Universite de Jijel, cite Oued-Aissa, B.P 98, Jijel 18000 (Algeria); Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR 7504 CNRS - UdS, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France); Schmerber, G.; Ihiawakrim, D.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR 7504 CNRS - UdS, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France)

2012-11-01

Highlights: Black-Right-Pointing-Pointer Influence of Co doping on the TiO{sub 2} tetragonal structure. Black-Right-Pointing-Pointer Decrease of the energy band gap after doping with Co atoms. Black-Right-Pointing-Pointer Appearance of ferromagnetism in Co-doped TiO{sub 2} diluted magnetic semiconductors. - Abstract: We have used a solid-state method to synthesize polycrystalline Co-doped TiO{sub 2} diluted magnetic semiconductors (DMSs) with Co concentrations of 0, and 0.5 at.%. X-ray diffraction patterns reveal that Co doped TiO{sub 2} crystallizes in the rutile tetragonal structure with no additional peaks. Transmission electron microscopy (TEM) did not indicate the presence of magnetic parasitic phases and confirmed that Co ions are uniformly distributed inside the samples. Optical absorbance measurements showed an energy band gap which decreases after doping with the Co atoms into the TiO{sub 2} matrix. Magnetization measurements revealed a paramagnetic behavior for the as-prepared Co-doped TiO{sub 2} and a ferromagnetic behavior for the same samples after annealed under a mixture of H{sub 2}/N{sub 2} atmosphere.

Photoreduction of carbon dioxide and water into formaldehyde and methanol on semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Aurian-Blajeni, B; Halmann, M; Manassen, J

1980-01-01

Heterogeneous photoassisted reduction of aqueous carbon dioxide was achieved using semiconductor powders, with either high-pressure Hg-lamps or sunlight as energy sources. The products were methanol, formaldehyde and methane. The reaction was carried out either as a gas-solid process, by passing carbon dioxide and water vapor over illuminated semiconductor surfaces, or as a liquid-solid reaction, by illuminating aqueous suspensions of semiconductor powders through which carbon dioxide was bubbled. Best results, under illumination by Hg-lamps, were obtained with aqueous suspensions of strontium titanate, SrTiO3, tungsten oxide, WO3, and titanium oxide, TiO2, resulting in absorbed energy conversion efficiencies of 6, 5.9 and 1.2 per cent, respectively.

Solid state division progress report, period ending February 29, 1980

Energy Technology Data Exchange (ETDEWEB)

1980-09-01

Research is reported concerning theoretical solid state physics; surface and near-surface properties of solids; defects in solids; transport properties of solids; neutron scattering; crystal growth and characterization; and isotope research materials.

Solid state division progress report, period ending February 29, 1980

International Nuclear Information System (INIS)

1980-09-01

Research is reported concerning theoretical solid state physics; surface and near-surface properties of solids; defects in solids; transport properties of solids; neutron scattering; crystal growth and characterization; and isotope research materials

Solid-State Thyratron Replacement. Final Report

Energy Technology Data Exchange (ETDEWEB)

Roth, Ian [Diversified Technologies, Inc., Bedford, MA

2017-12-12

Under this SBIR, DTI developed a solid-state switch as an alternative to legacy thyratron equipment. Our Phase II objective was to make a solid-state thyratron replacement that would provide equivalent or better performance, much higher reliability (at least a 20 year lifetime, compared to a thyratron’s two-year lifetime) and would sell for ~3x the cost of a thyratron, or less than $40k. We were successful in building a solid-state switch which could reliably function as a thyratron replacement. The unit was designed to directly replace the thyratrons currently being used at SLAC’s Linac Coherent Light Source (LCLS), and was built in a tank that was small enough to fit into the existing thyratron cabinet, providing a true form-fit-function replacement path. We tested the switch at the full operating specifications: 48 kV, 6.3 kA, and 1 µs risetime. We also demonstrated a peak-to-peak pulse jitter of 1.5 ns, which is five times shorter than is typical for thyratrons. This lower jitter would improve the performance of the LCLS beam. The predicted reliability is more than 80 years, which is 40 times greater than a thyratron.

Space-time complexity in solid state models

International Nuclear Information System (INIS)

Bishop, A.R.

1985-01-01

In this Workshop on symmetry-breaking it is appropriate to include the evolving fields of nonlinear-nonequilibrium systems in which transitions to and between various degrees of ''complexity'' (including ''chaos'') occur in time or space or both. These notions naturally bring together phenomena of pattern formation and chaos and therefore have ramifications for a huge array of natural sciences - astrophysics, plasmas and lasers, hydrodynamics, field theory, materials and solid state theory, optics and electronics, biology, pattern recognition and evolution, etc. Our particular concerns here are with examples from solid state and condensed matter

State of the art of solid state dosimetry

International Nuclear Information System (INIS)

Souza, Susana O.; Yamamoto, Takayoshi; D'Errico, Francesco

2014-01-01

Passive solid-state detectors still dominate the personal dosimetry field. This article provides state of the art in this field and summarizes the most recent works presented on TL, OSL and RPL during the 17th International Conference on Solid State Dosimetry held in Recife in September 2013. The Article contains in particular the techniques Thermoluminescence (TL), Optically Stimulated Luminescence (OSL), radio photoluminescence (RPL). Thermoluminescence has the biggest advantage of the wide availability of commercial materials for dosimetry, and the nature tissue-equivalent of several of these materials. The limitation of the TL dosimetry presents fading luminance signal and the need for high temperatures to obtain the signal. The Optically Stimulated Luminescence has the advantages of high sensitivity, the possibility of multiple reading, while its limit is the need to use response compensating filters in addition to the high cost of equipment and dosimeters still restricted very few options trading . The radio photoluminescence has a reading that is completely non-destructive, but their dosimeters present lack of tissue-equivalent and a high cost. Presents the details of the techniques and the advantages and limitations of each of these will be discussed

Micropores preparation in A3B5 semiconductors

Czech Academy of Sciences Publication Activity Database

Nohavica, Dušan; Gladkov, Petar; Zelinka, Jiří; Jarchovský, Zdeněk

-, mim. číslo (2007), s. 1-16 ISSN 1335-9053. [Development of Materials Science in Research and Education . Tatranská Štrba, 10.09.2007-14.09.2007] R&D Projects: GA ČR GA202/06/1315; GA MŠk ME 834 Institutional research plan: CEZ:AV0Z20670512 Keywords : porous semiconductors * III-V semiconductors * nanoelectronics Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.mtf.stuba.sk/docs//internetovy_casopis/2007/mimorcis/nohavica.pdf

SOLID STATE BATTERIES WITH CONDUCTING POLYMERS

OpenAIRE

Bénière , F.; Boils , D.; Cánepa , H.; Franco , J.; Le Corre , A.; Louboutin , J.

1983-01-01

The conducting polymers like (CH)x are very interesting materials for electrodes in electrochemical cells. We have combined such electrodes with solid electrolytes to build "all solid-state" batteries. The first prototypes using a silver anode and a silver conducting electrolyte have been working satisfactorily since two years. The performances have been tested with many batteries to study the electrical properties as well as the thermodynamical parameters. A number of cycles of charge-discha...

Elucidation and control of electronic properties related to organic semiconductors

International Nuclear Information System (INIS)

Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

2009-01-01

The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

DNP-enhanced solid-state NMR spectroscopy of active pharmaceutical ingredients.

Science.gov (United States)

Zhao, Li; Pinon, Arthur C; Emsley, Lyndon; Rossini, Aaron J

2017-11-28

Solid-state NMR spectroscopy has become a valuable tool for the characterization of both pure and formulated active pharmaceutical ingredients (APIs). However, NMR generally suffers from poor sensitivity that often restricts NMR experiments to nuclei with favorable properties, concentrated samples, and acquisition of one-dimensional (1D) NMR spectra. Here, we review how dynamic nuclear polarization (DNP) can be applied to routinely enhance the sensitivity of solid-state NMR experiments by one to two orders of magnitude for both pure and formulated APIs. Sample preparation protocols for relayed DNP experiments and experiments on directly doped APIs are detailed. Numerical spin diffusion models illustrate the dependence of relayed DNP enhancements on the relaxation properties and particle size of the solids and can be used for particle size determination when the other factors are known. We then describe the advanced solid-state NMR experiments that have been enabled by DNP and how they provide unique insight into the molecular and macroscopic structure of APIs. For example, with large sensitivity gains provided by DNP, natural isotopic abundance, 13 C- 13 C double-quantum single-quantum homonuclear correlation NMR spectra of pure APIs can be routinely acquired. DNP also enables solid-state NMR experiments with unreceptive quadrupolar nuclei such as 2 H, 14 N, and 35 Cl that are commonly found in APIs. Applications of DNP-enhanced solid-state NMR spectroscopy for the molecular level characterization of low API load formulations such as commercial tablets and amorphous solid dispersions are described. Future perspectives for DNP-enhanced solid-state NMR experiments on APIs are briefly discussed. Copyright © 2017 John Wiley & Sons, Ltd.

The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

Science.gov (United States)

Chantis, Athanasios

2009-03-01

I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

Guanidinium nonaflate as a solid-state proton conductor

DEFF Research Database (Denmark)

Chen, Xiaoli; Tang, Haolin; Putzeys, Tristan

2016-01-01

Protic organic ionic plastic crystals (POIPCs) are a type of novel solid-state proton conductors. In this work, guanidinium nonaflate ([Gdm-H][NfO]) is reported to be a model POIPC. Its structure-property relationship has been investigated comprehensively. Infrared analysis of [Gdm-H][NfO] and its....... In addition, POIPC-based solid-state proton conductors are also expected to find applications in sensors and other electrochemical devices....

The effects of heavy doping on the electronic states in semiconductors

International Nuclear Information System (INIS)

Sernelius, B.E.

1987-01-01

The physics of semiconductors is reviewed. Topics included in the discussion are energy of the dopant system (kinetic energy in a many-valley semiconductor, exchange energy in an ellipsoidal Fermi volume, energy in a polar semiconductor), self energy shifts, band-gap narrowing, and piezo experiments. 31 refs., 27 figs

Novel Nanostructured Solid Materials for Modulating Oral Drug Delivery from Solid-State Lipid-Based Drug Delivery Systems.

Science.gov (United States)

Dening, Tahnee J; Rao, Shasha; Thomas, Nicky; Prestidge, Clive A

2016-01-01

Lipid-based drug delivery systems (LBDDS) have gained significant attention in recent times, owing to their ability to overcome the challenges limiting the oral delivery of poorly water-soluble drugs. Despite the successful commercialization of several LBDDS products over the years, a large discrepancy exists between the number of poorly water-soluble drugs displaying suboptimal in vivo performances and the application of LBDDS to mitigate their various delivery challenges. Conventional LBDDS, including lipid solutions and suspensions, emulsions, and self-emulsifying formulations, suffer from various drawbacks limiting their widespread use and commercialization. Accordingly, solid-state LBDDS, fabricated by adsorbing LBDDS onto a chemically inert solid carrier material, have attracted substantial interest as a viable means of stabilizing LBDDS whilst eliminating some of the various limitations. This review describes the impact of solid carrier choice on LBDDS performance and highlights the importance of appropriate solid carrier material selection when designing hybrid solid-state LBDDS. Specifically, emphasis is placed on discussing the ability of the specific solid carrier to modulate drug release, control lipase action and lipid digestion, and enhance biopharmaceutical performance above the original liquid-state LBDDS. To encourage the interested reader to consider their solid carrier choice on a higher level, various novel materials with the potential for future use as solid carriers for LBDDS are described. This review is highly significant in guiding future research directions in the solid-state LBDDS field and fostering the translation of these delivery systems to the pharmaceutical marketplace.

Preliminary field evaluation of solid state cameras for security applications

International Nuclear Information System (INIS)

1987-01-01

Recent developments in solid state imager technology have resulted in a series of compact, lightweight, all-solid-state closed circuit television (CCTV) cameras. Although it is widely known that the various solid state cameras have less light sensitivity and lower resolution than their vacuum tube counterparts, the potential for having a much longer Mean Time Between Failure (MTBF) for the all-solid-state cameras is generating considerable interest within the security community. Questions have been raised as to whether the newest and best of the solid state cameras are a viable alternative to the high maintenance vacuum tube cameras in exterior security applications. To help answer these questions, a series of tests were performed by Sandia National Laboratories at various test sites and under several lighting conditions. In general, all-solid-state cameras need to be improved in four areas before they can be used as wholesale replacements for tube cameras in exterior security applications: resolution, sensitivity, contrast, and smear. However, with careful design some of the higher performance cameras can be used for perimeter security systems, and all of the cameras have applications where they are uniquely qualified. Many of the cameras are well suited for interior assessment and surveillance uses, and several of the cameras are well designed as robotics and machine vision devices

The solid state detector technology for picosecond laser ranging

Science.gov (United States)

Prochazka, Ivan

1993-01-01

We developed an all solid state laser ranging detector technology, which makes the goal of millimeter accuracy achievable. Our design and construction philosophy is to combine the techniques of single photon ranging, ultrashort laser pulses, and fast fixed threshold discrimination while avoiding any analog signal processing within the laser ranging chain. The all solid state laser ranging detector package consists of the START detector and the STOP solid state photon counting module. Both the detectors are working in an optically triggered avalanche switching regime. The optical signal is triggering an avalanche current buildup which results in the generation of a uniform, fast risetime output pulse.

Solid state physics

CERN Document Server

Burns, Gerald

2013-01-01

The objective of Solid State Physics is to introduce college seniors and first-year graduate students in physics, electrical engineering, materials science, chemistry, and related areas to this diverse and fascinating field. I have attempted to present this complex subject matter in a coherent, integrated manner, emphasizing fundamental scientific ideas to give the student a strong understanding and ""feel"" for the physics and the orders of magnitude involved. The subject is varied, covering many important, sophisticated, and practical areas, which, at first, may appear unrelated but which ar

Solid state mechanics

International Nuclear Information System (INIS)

Habib, P.

1988-01-01

The 1988 progress report of the Solid State Mechanics laboratory (Polytechnic School, France) is presented. The research program domains are the following: investigations concerning the stability and bifurcation of the reversible or irreversible mechanical systems, the problems related to the theoretical and experimental determination of the materials rheological properties, the fatigue crack formation and propagation in multiple-axial stress conditions, the expert systems, and the software applied in the reinforced earth structures dimensioning. Moreover, the published papers, the books, the congress communications, the thesis, and the patents are listed [fr

Facilitated ion transport in all-solid-state flexible supercapacitors.

Science.gov (United States)

Choi, Bong Gill; Hong, Jinkee; Hong, Won Hi; Hammond, Paula T; Park, HoSeok

2011-09-27

The realization of highly flexible and all-solid-state energy-storage devices strongly depends on both the electrical properties and mechanical integrity of the constitutive materials and the controlled assembly of electrode and solid electrolyte. Herein we report the preparation of all-solid-state flexible supercapacitors (SCs) through the easy assembly of functionalized reduced graphene oxide (f-RGO) thin films (as electrode) and solvent-cast Nafion electrolyte membranes (as electrolyte and separator). In particular, the f-RGO-based SCs (f-RGO-SCs) showed a 2-fold higher specific capacitance (118.5 F/g at 1 A/g) and rate capability (90% retention at 30 A/g) compared to those of all-solid-state graphene SCs (62.3 F/g at 1A/g and 48% retention at 30 A/g). As proven by the 4-fold faster relaxation of the f-RGO-SCs than that of the RGO-SCs and more capacitive behavior of the former at the low-frequency region, these results were attributed to the facilitated ionic transport at the electrical double layer by means of the interfacial engineering of RGO by Nafion. Moreover, the superiority of all-solid-state flexible f-RGO-SCs was demonstrated by the good performance durability under the 1000 cycles of charging and discharging due to the mechanical integrity as a consequence of the interconnected networking structures. Therefore, this research provides new insight into the rational design and fabrication of all-solid-state flexible energy-storage devices as well as the fundamental understanding of ion and charge transport at the interface. © 2011 American Chemical Society

Entanglement in Solid-State Nanostructures

NARCIS (Netherlands)

Bodoky, F.

2009-01-01

The goal of this thesis is to investigate theoretically the generation and behaviour of multipartite entanglement for solid-state nanosystems, in particular electron spin quantum bits (so-called 'qubits') in quantum dots. A quantum dot is a tiny potential well where a single electron can be trapped.

All-optical quantum computing with a hybrid solid-state processing unit

International Nuclear Information System (INIS)

Pei Pei; Zhang Fengyang; Li Chong; Song Heshan

2011-01-01

We develop an architecture of a hybrid quantum solid-state processing unit for universal quantum computing. The architecture allows distant and nonidentical solid-state qubits in distinct physical systems to interact and work collaboratively. All the quantum computing procedures are controlled by optical methods using classical fields and cavity QED. Our methods have a prominent advantage of the insensitivity to dissipation process benefiting from the virtual excitation of subsystems. Moreover, the quantum nondemolition measurements and state transfer for the solid-state qubits are proposed. The architecture opens promising perspectives for implementing scalable quantum computation in a broader sense that different solid-state systems can merge and be integrated into one quantum processor afterward.

Structural and dynamic properties of solid state ionics

International Nuclear Information System (INIS)

Sakuma, T.

1995-01-01

The structural and dynamic properties of solid state ionics are reviewed. The low temperature phase transition of the copper halide-chalcogen compounds by specific heat measurements, electrical conductivity measurements and x-ray diffraction measurements are explained. The structures of solid state ionics investigated by the usual x-ray diffraction method and the anomalous x-ray scattering (AXS) measurement are discussed. The expression of the diffuse scattering intensity including the correlations among the thermal displacements of atoms has been given and applied to α-AgI type solid state ionics and lithium sulphate. The presence of low-energy excitations in crystalline copper ion conductors and the superionic conducting glass is investigated by neutron inelastic scattering measurements. The relation between the excitation energy and the mass of the cations is discussed. (author). 141 refs., 21 figs., 7 tabs

Advances in Solid State Physics

CERN Document Server

Haug, Rolf

2009-01-01

The present volume 48 of the Advances in Solid State Physics contains the written version of a large number of the invited talks of the 2008 Spring Meeting of the DPG section Condensed Matter Physics (Sektion kondensierte Materie der DPG) which was held in Berlin, Germany, and gives a nice overview of the present status of condensed matter physics. Low-dimensional systems are dominating the field and especially nanowires and quantum dots. In recent years one learned how to produce nanowires directly during a growth process. Therefore, a number of articles is related to such nanowires. In nanoparticles and quantum dots, the dimensionality is further reduced and we learn more and more how to produce such systems in a defined way and what effects result from the confinement in all three dimensions. Spin effects and magnetism is another important field of present-day research in solid state physics. The third chapter covers this physics. The growing interest into organic materials and biological systems is reflec...

Theory of the l-state population of Rydberg states formed in ion-solid collisions

International Nuclear Information System (INIS)

Kemmler, J.; Burgdoerfer, J.; Reinhold, C.O.

1991-01-01

The experimentally observed high-l-state population of ions excited in ion-solid interactions differs sharply from l-state populations produced in ion-atom collisions. We have studied the population dynamics of electronic excitation and transport within the framework of a classical transport theory for O 2+ (2-MeV/u) ions traversing C foils. The resulting delayed-photon-emission intensities are found to be in very good agreement with experiment. Initial phase-space conditions have been obtained from both classical-trajectory Monte Carlo calculations and random initial distributions. We find evidence that the very-high-l-state populations produced in ion-solid collisions are the result of a diffusion to high-l states under the influence of multiple scattering in the bulk of the solid

Dissolved hydrogen and oxygen sensors using semiconductor devices

International Nuclear Information System (INIS)

Hara, Nobuyoshi; Sugimoto, Katsuhisa

1995-01-01

The concentrations of DH and DO in aqueous solution are the factors that determine the equilibrium potential of hydrogen and oxygen electrode reactions, respectively, and are the quantities which directly related to the rates of hydrogen generation type and oxygen consumption type corrosion reactions, therefore, they have the important meaning in the electrochemistry of corrosion. In the hydrogen injection into BWR cooling water, the concentration of hydrogen must be controlled strictly, accordingly DH and DO sensors and electrochemical potential sensors are required. For the chemical sensors used in reactor cooling water, the perfectly solid state sensors made of high corrosion resistance materials, which are small size and withstand high temperature and high pressure, must be developed. The structure and the characteristics of the semiconductor devices used as gas sensors, and the principles of DH and DO sensors are described. If the idea of porous or discontinuous membrane gate is developed, the ion sensor of solid structure with one-body reference electrode may be made. (K.I.)

Multi-Year Program Plan FY'09-FY'15 Solid-State Lighting Research and Development

Energy Technology Data Exchange (ETDEWEB)

None

2009-03-01

President Obama's energy and environment agenda calls for deployment of 'the Cheapest, Cleanest, Fastest Energy Source - Energy Efficiency.' The Department of Energy's (DOE) Office of Energy Efficiency and Renewable Energy (EERE) plays a critical role in advancing the President's agenda by helping the United States advance toward an energy-efficient future. Lighting in the United States is projected to consume nearly 10 quads of primary energy by 2012.3 A nation-wide move toward solid-state lighting (SSL) for general illumination could save a total of 32.5 quads of primary energy between 2012 and 2027. No other lighting technology offers the DOE and our nation so much potential to save energy and enhance the quality of our built environment. The DOE has set forth the following mission statement for the SSL R&D Portfolio: Guided by a Government-industry partnership, the mission is to create a new, U.S.-led market for high-efficiency, general illumination products through the advancement of semiconductor technologies, to save energy, reduce costs and enhance the quality of the lighted environment.

Q-switched all-solid-state lasers and application in processing of thin-film solar cell

Science.gov (United States)

Liu, Liangqing; Wang, Feng

2009-08-01

Societal pressure to renewable clean energy is increasing which is expected to be used as part of an overall strategy to address global warming and oil crisis. Photovoltaic energy conversion devices are on a rapidly accelerating growth path driven by government, of which the costs and prices lower continuously. The next generation thin-film devices are considered to be more efficiency and greatly reduced silicon consumption, resulting in dramatically lower per unit fabrication costs. A key aspect of these devices is patterning large panels to create a monolithic array of series-interconnected cells to form a low current, high voltage module. This patterning is accomplished in three critical scribing processes called P1, P2, and P3. All-solid-state Q-switched lasers are the technology of choice for these processes, due to their advantages of compact configuration, high peak-value power, high repeat rate, excellent beam quality and stability, delivering the desired combination of high throughput and narrow, clean scribes. The end pumped all-solid-state lasers could achieve 1064nm IR resources with pulse width of nanoseconds adopting acoustic-optics Q-switch, shorter than 20ns. The repeat rate is up to 100kHz and the beam quality is close to diffraction limit. Based on this, 532nm green lasers, 355nm UV lasers and 266nm DUV lasers could be carried out through nonlinear frequency conversion. Different wave length lasers are chose to process selective materials. For example, 8-15 W IR lasers are used to scribe the TCO film (P1); 1-5 W green lasers are suitable for scribing the active semiconductor layers (P2) and the back contact layers (P3). Our company, Wuhan Lingyun Photo-electronic System Co. Ltd, has developed 20W IR and 5W green end-pumped Q-switched all-solid-state lasers for thin-film solar industry. Operating in high repeat rates, the speed of processing is up to 2.0 m/s.

Solid State Inflation Balloon Active Deorbiter

Data.gov (United States)

National Aeronautics and Space Administration — The Solid State Inflation Balloon (SSIB) is a simple, reliable, low-cost, non-propulsive system for deliberate deorbit and control of downrange point-of-impact that...

All-Solid-State Sodium-Selective Electrode with a Solid Contact of Chitosan/Prussian Blue Nanocomposite

Directory of Open Access Journals (Sweden)

Tanushree Ghosh

2017-11-01

Full Text Available Conventional ion-selective electrodes with a liquid junction have the disadvantage of potential drift. All-solid-state ion-selective electrodes with solid contact in between the metal electrode and the ion-selective membrane offer high capacitance or conductance to enhance potential stability. Solution-casted chitosan/Prussian blue nanocomposite (ChPBN was employed as the solid contact layer for an all-solid-state sodium ion-selective electrode in a potentiometric sodium ion sensor. Morphological and chemical analyses confirmed that the ChPBN is a macroporous network of chitosan that contains abundant Prussian blue nanoparticles. Situated between a screen-printed carbon electrode and a sodium-ionophore-filled polyvinylchloride ion-selective membrane, the ChPBN layer exhibited high redox capacitance and fast charge transfer capability, which significantly enhanced the performance of the sodium ion-selective electrode. A good Nernstian response with a slope of 52.4 mV/decade in the linear range from 10−4–1 M of NaCl was observed. The stability of the electrical potential of the new solid contact was tested by chronopotentiometry, and the capacitance of the electrode was 154 ± 4 µF. The response stability in terms of potential drift was excellent (1.3 µV/h for 20 h of continuous measurement. The ChPBN proved to be an efficient solid contact to enhance the potential stability of the all-solid-state ion-selective electrode.

Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors.

Science.gov (United States)

Chung, Hyunjoong; Dudenko, Dmytro; Zhang, Fengjiao; D'Avino, Gabriele; Ruzié, Christian; Richard, Audrey; Schweicher, Guillaume; Cornil, Jérôme; Beljonne, David; Geerts, Yves; Diao, Ying

2018-01-18

Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.

Effect of thermodynamic fluctuations of magnetization on the bound magnetic polaron state in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Bednarski, Henryk; Spałek, Józef

2014-01-01

We extend the theory of the bound magnetic polaron (BMP) in diluted paramagnetic semiconductors to the situation with a ferromagnetic phase transition. This is achieved by including the classical Gaussian fluctuations of magnetization from the quartic (non-Gaussian) term in the effective Ginzburg–Landau Hamiltonian for the spins. Within this approach, we find a ferromagnetically ordered state within the BMP in the temperature range well above the Curie temperature for the host magnetic semiconductor. Numerical results are compared directly with the recently available experimental data for the ferromagnetic semiconductor GdN. The agreement is excellent, given the simplicity of our model, and is because the polaron size (≃1.4 nm) encompasses a relatively large but finite number (N≈400) of quasiclassical spins S=7/2 coming from Gd 3+ ions. The presence of BMP invalidates the notion of critical temperature and thus makes the incorporation of classical Gaussian fluctuations sufficient to realistically describe the situation. (paper)

Solid state insurrection how the science of substance made American physics matter

CERN Document Server

Martin, Joseph D

2018-01-01

Solid state physics—the study of the physical properties of solid matter—was far and away the most populous subfield of Cold War American physics. But despite prolific contributions to consumer and medical technology, such as the transistor and magnetic resonance imaging, it garnered much less professional prestige and public attention than nuclear and particle physics. Solid State Insurrection argues that solid state physics was nonetheless essential to securing the vast social, political, and financial capital Cold War physics enjoyed. Solid state’s technological bent, and its challenge to the “pure science” ideal many physicists cherished, helped physics as a whole respond more readily to Cold War social, political, and economic pressures. Solid state research kept physics economically and technologically relevant, sustaining its lofty cultural standing and policy influence long after the sheen of the Manhattan Project had faded. By placing solid state at the center of the story of twentieth cent...

by a solid-state metathesis approach

Indian Academy of Sciences (India)

Wintec

Department of Mechanical Engineering,. † ... A solid-state metathesis approach initiated by microwave energy has been successfully applied for ... and chemical properties of synthesized powders are determined by powder X-ray diffraction, ...

Solid state protein monolayers: Morphological, conformational, and functional properties

Science.gov (United States)

Pompa, P. P.; Biasco, A.; Frascerra, V.; Calabi, F.; Cingolani, R.; Rinaldi, R.; Verbeet, M. Ph.; de Waal, E.; Canters, G. W.

2004-12-01

We have studied the morphological, conformational, and electron-transfer (ET) function of the metalloprotein azurin in the solid state, by a combination of physical investigation methods, namely atomic force microscopy, intrinsic fluorescence spectroscopy, and scanning tunneling microscopy. We demonstrate that a "solid state protein film" maintains its nativelike conformation and ET function, even after removal of the aqueous solvent.

Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

International Nuclear Information System (INIS)

Yalishev, V.Sh.

2006-02-01

Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

Topologically distinct classes of valence-bond solid states with their parent Hamiltonians

International Nuclear Information System (INIS)

Tu Honghao; Zhang Guangming; Xiang Tao; Liu Zhengxin; Ng Taikai

2009-01-01

We present a general method to construct one-dimensional translationally invariant valence-bond solid states with a built-in Lie group G and derive their matrix product representations. The general strategies to find their parent Hamiltonians are provided so that the valence-bond solid states are their unique ground states. For quantum integer-spin-S chains, we discuss two topologically distinct classes of valence-bond solid states: one consists of two virtual SU(2) spin-J variables in each site and another is formed by using two SO(2S+1) spinors. Among them, a spin-1 fermionic valence-bond solid state, its parent Hamiltonian, and its properties are discussed in detail. Moreover, two types of valence-bond solid states with SO(5) symmetries are further generalized and their respective properties are analyzed as well.

Radiation-chemical aspects of solid state hot atom chemistry

International Nuclear Information System (INIS)

Matsuura, T.; Collins, K.E.; Collins, C.H.

1984-01-01

The study of nuclear hot atom chemical (NHAC) processes occurring in solids is seriously limited by the lack of adequate methods for directly studying the chemical species containing hot atoms. In the present review the effects of ionizing radiation on parent and non-parent yields from solid state targets is surveyed and qualitative interpretations are given. After a few general remarks of the relationship of radiation chemistry to solid state NHAC, a detailed description of the radiation effects is given (radiation annealing, neutron activation, changes in separable yield). (Auth.)

Principle and application of low energy inverse photoemission spectroscopy: A new method for measuring unoccupied states of organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Yoshida, Hiroyuki, E-mail: hyoshida@chiba-u.jp

2015-10-01

Highlights: • Principle of low energy inverse photoemission spectroscopy is described. • Instruments including electron sources and photon detectors are shown. • Recent results about organic devices and fundamental studies are reviewed. • Electron affinities of typical organic semiconductors are compiled. - Abstract: Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse photoemission spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse photoemission spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25 eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as photoemission spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.

Principle and application of low energy inverse photoemission spectroscopy: A new method for measuring unoccupied states of organic semiconductors

International Nuclear Information System (INIS)

Yoshida, Hiroyuki

2015-01-01

Highlights: • Principle of low energy inverse photoemission spectroscopy is described. • Instruments including electron sources and photon detectors are shown. • Recent results about organic devices and fundamental studies are reviewed. • Electron affinities of typical organic semiconductors are compiled. - Abstract: Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse photoemission spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse photoemission spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25 eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as photoemission spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.

Transient photoconductivity in amorphous semiconductors

International Nuclear Information System (INIS)

Mpawenayo, P.

1997-07-01

Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

Solid State Division: Progress report for period ending September 30, 1987

Energy Technology Data Exchange (ETDEWEB)

Green, P.H.; Watson, D.M. (eds.)

1988-03-01

This paper contains a collection of articles on research done at the Solid State Division of ORNL. General topics covered are: theoretical solid state physics; neutron scattering; physical properties of superconductors and ceramics; synthesis and characterization of solids; ion beam and laser processing; and surface and defect studies. (LSP)

Solid State Division: Progress report for period ending September 30, 1987

International Nuclear Information System (INIS)

Green, P.H.; Watson, D.M.

1988-03-01

This paper contains a collection of articles on research done at the Solid State Division of ORNL. General topics covered are: theoretical solid state physics; neutron scattering; physical properties of superconductors and ceramics; synthesis and characterization of solids; ion beam and laser processing; and surface and defect studies

High power 352 MHz solid state amplifiers developed at the Synchrotron SOLEIL

Directory of Open Access Journals (Sweden)

P. Marchand

2007-11-01

Full Text Available In SOLEIL, 5 solid state amplifiers provide the required rf power at 352  MHz: 1×35  kW in the booster and 4×190  kW in the storage ring. They consist in a combination of a large number of 330 W elementary modules (1×147 in the booster and 4×724 in the storage ring, based on a design developed in-house, with MOSFETs (metal-oxide-semiconductor field-effect transistors, integrated circulators, and individual power supplies. Although quite innovative and challenging for the required power range, this technology is very attractive and presents significant advantages as compared to the more conventional vacuum tubes, klystrons, or inductive output tubes (IOTs. The booster and two of the storage ring power plants have been successfully commissioned and the first operational experience is quite satisfactory. The amplifiers proved to be very reliable as well as easy and flexible in operation; they have not been responsible for any beam time loss.

Accessing the bottleneck in all-solid state batteries, lithium-ion transport over the solid-electrolyte-electrode interface

NARCIS (Netherlands)

Yu, C.; Ganapathy, S.; van Eck, Ernst R H; Wang, H.; Basak, S.; Li, Z.; Wagemaker, M.

2017-01-01

Solid-state batteries potentially offer increased lithium-ion battery energy density and safety as required for large-scale production of electrical vehicles. One of the key challenges toward high-performance solid-state batteries is the large impedance posed by the electrode-electrolyte

Solid-State Spectroscopy An Introduction

CERN Document Server

Kuzmany, Hans

2009-01-01

Spectroscopic methods have opened up a new horizon in our knowledge of solid-state materials. Numerous techniques using electromagnetic radiation or charged and neutral particles have been invented and worked out to a high level in order to provide more detailed information on the solids. The text presented here is an updated description of such methods as they were originally presented in the first edition. It covers linear response of solids to electromagnetic radiation in a frequency range extending from megahertz or gigahertz as used in spin resonance spectroscopy, to infrared spectroscopy and various forms of spectroscopy in the visible and near visible spectral range. It extends to spectroscopy in the UV and x-ray spectral range and eventually several spectroscopic methods are addressed in the frequency range of g radiation. Likewise linear response to irradiation with particles such as electrons, positrons, muons, neutrons, and atoms is discussed. Instrumental and technical background is provided as we...

Solid State Electrochemical DeNOx

DEFF Research Database (Denmark)

Kammer Hansen, Kent

2010-01-01

The literature on direct electrochemical reduction of NOx in a solid state cell has been reviewed. It is shown that that the reduction of nitric oxide either occurs on the electrode or on the electrolyte if F-centers are formed. It is also shown that some oxide based electrodes has a high apparent...

High-power, solid-state rf source for accelerator cavities

International Nuclear Information System (INIS)

Vaughan, D.R.; Mols, G.E.; Reid, D.W.; Potter, J.M.

1985-01-01

During the past few years the Defense and Electronics Center of Westinghouse Electric Corporation has developed a solid-state, 250-kW peak, rf amplifier for use with the SPS-40 radar system. This system has a pulse length of 60 μs and operates across the frequency band from 400 to 450 MHz. Because of the potential use of such a system as an rf source for accelerator applications, a collaborative experiment was initiated between Los Alamos National Laboratory and Westinghouse to simulate the resonant load conditions of an accelerator cavity. This paper describes the positive results of that experiment as well as the solid-state amplifier architecture. It also explores the future of high-power, solid-state amplifiers as rf sources for accelerator structures

Robustness of Topological Superconductivity in Solid State Hybrid Structures

Science.gov (United States)

Sitthison, Piyapong

The non-Abelian statistics of Majorana fermions (MFs) makes them an ideal platform for implementing topological quantum computation. In addition to the fascinating fundamental physics underlying the emergence of MFs, this potential for applications makes the study of these quasiparticles an extremely popular subject in condensed matter physics. The commonly called `Majorana fermions' are zero-energy bound states that emerge near boundaries and defects in topological superconducting phases, which can be engineered, for example, by proximity coupling strong spin-orbit coupling semiconductor nanowires and ordinary s-wave superconductors. The stability of these bound states is determined by the stability of the underlying topological superconducting phase. Hence, understanding their stability (which is critical for quantum computation), involves studying the robustness of the engineered topological superconductors. This work addresses this important problem in the context of two types of hybrid structures that have been proposed for realizing topological superconductivity: topological insulator - superconductor (TI-SC) and semiconductor - superconductor (SM-SC) nanostructures. In both structures, electrostatic effects due to applied external potentials and interface-induced potentials are significant. This work focuses on developing a theoretical framework for understanding these effects, to facilitate the optimization of the nanostructures studied in the laboratory. The approach presented in this thesis is based on describing the low-energy physics of the hybrid structure using effective tight-binding models that explicitly incorporate the proximity effects emerging at interfaces. Generically, as a result of the proximity coupling to the superconductor, an induced gap emerges in the semiconductor (topological insulator) sub-system. The strength of the proximity-induced gap is determined by the transparency of the interface and by the amplitude of the low- energy SM

Theoretical aspects of positrons in imperfect solids

International Nuclear Information System (INIS)

Puska, M.J.

1987-01-01

The efficient use of positron annihilation in defect studies requires a deep understanding of the basic processes of positron-imperfect solid interaction. Three stages, i.e. thermalization, trapping by a defect, and the annihilation can be separated during the evolution of the interaction. The last two processes are the most relevant ones for the positron lifetime spectroscopy and they will be discussed in detail in this review. The complete solution of the problem of a localized positron interacting with the electrons around a defect requires the simultaneous self-consistent calculation of the electronic structure and the positron state. This is in principle possible in the two component density functional theory. However, the approximation, in which the electronic structure without the positron influence is used and the electron-positron correlation effects are described by local enhancement factors, has turned out to be feasible in practice and also accurate enough in predicting positron annihilation characteristics. Moreover, a non-self-consistent electron structure is sufficient in many cases. This enables an efficient calculation method in which the positron wave function can be solved in three dimensions for arbitrary defect geometries. Enhancement models for simple metals, transition metals, and semiconductors are represented. Thereafter, applications to vacancies, vacancy clusters, and vacancy-impurity complexes are shown. The positron trapping by defects is mediated by the transfer of the positron binding energy to the solid in the form of electron-hole pairs and phonons. The trapping phenomenon is discussed in the case of metals and semiconductors. Semiconductors are especially challenging because the existence of the energy gap makes the low energy electron-hole excitations impossible and because the defects have different charge states effecting strongly on the trapping rate. (author)

Core level shifts in group IV semiconductors and semimetals

International Nuclear Information System (INIS)

Yin, S.; Tosatti, E.

1981-08-01

We calculate the core level binding energy shift from the isolated atom to the crystalline solid, for group IV elemental semiconductors. This is done by simple extension of Johansson and Martensson's scheme for metals. We show that the core level energy in a nonmetal must be measured by the photo absorption (''core exciton'') threshold rather than by photo emission. As a byproduct, a simple scheme is also devised to evaluate impurity heats of solutions in semiconductors. (author)

High Reversibility of Soft Electrode Materials in All-solid-state Batteries

Directory of Open Access Journals (Sweden)

Atsushi eSakuda

2016-05-01

Full Text Available All-solid-state batteries using inorganic solid electrolytes (SEs are considered to be ideal batteries for electric vehicles (EVs and plug-in hybrid electric vehicles (PHEVs because they are potentially safer than conventional lithium-ion batteries (LIBs. In addition, all-solid-state batteries are expected to have long battery lives owing to the inhibition of chemical side reactions because only lithium ions move through the typically used inorganic SEs. The development of high-energy (more than 300 Wh kg-1 secondary batteries has been eagerly anticipated for years. The application of high-capacity electrode active materials is essential for fabricating such batteries. Recently, we proposed metal polysulfides as new electrode materials. These materials show higher conductivity and density than sulfur, which is advantageous for fabricating batteries with relatively higher energy density. Lithium niobium sulfides, such as Li3NbS4, have relatively high density, conductivity, and rate capability among metal polysulfide materials, and batteries with these materials have capacities high enough to potentially exceed the gravimetric energy density of conventional LIBs.Favorable solid-solid contact between the electrode and electrolyte particles is a key factor for fabricating high performance all-solid-state batteries. Conventional oxide-based positive electrode materials tend to be given rise to cracks during fabrication and/or charge-discharge processes. Here we report all-solid-state cells using lithium niobium sulfide as a positive electrode material, where favorable solid-solid contact was established by using lithium sulfide electrode materials because of their high processability. Cracks were barely observed in the electrode particles in the all-solid-state cells before or after charging and discharging with a high capacity of approx. 400 mAh g-1, suggesting that the lithium niobium sulfide electrode charged and discharged without experiencing

Quantum technologies for solid state physics using cold trapped ions

International Nuclear Information System (INIS)

Ferdinand Schmidt-Kaler

2014-01-01

The quantum states of ions are perfectly controlled, and may be used for fundamental research in quantum physics, as highlighted by the Nobel Prize given to Dave Wineland in 2012. Two directions of quantum technologies, followed by the Mainz group, have high impact on solid state physics: I) The delivery of single cold ions on demand for the deterministic doping of solid state materials with nm spatial precision to generate design-structures optimized for quantum processors. II) The simulation of solid state relevant Hamiltonians with AMO systems of one or two dimensional arrays of trapped ions. I will talk about the recent progress in both fields. http://www.quantenbit.de/#Number Sign#/publications/(author)

Solid-state nanopores for scanning single molecules and mimicking biology

NARCIS (Netherlands)

Kowalczyk, S.W.

2011-01-01

Solid-state nanopores, nanometer-size holes in a thin synthetic membrane, are a versatile tool for the detection and manipulation of charged biomolecules. This thesis describes mostly experimental work on DNA translocation through solid-state nanopores, which we study at the single-molecule level.

Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

International Nuclear Information System (INIS)

Roessler, U.

1992-01-01

This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

K. S. Krishnan Memorial Lecture: The role of crystallography in solid state physics

Energy Technology Data Exchange (ETDEWEB)

Guinier, A [Paris-11 Univ., 91 - Orsay (France)

1977-06-01

The role of crystallography in solving problems in solid state physics, is explained. A few domains in solid state physics such as detection of localized defects, structure of metallic solid solutions, mechanism of phase transitions and the intermediate states between crystalline and amorphous states, have been investigated successfully by X-ray and neutron diffraction methods. The studies have helped a deeper understanding of solid state phenomena. Structures of CuBa, AlZn, ..beta..-alumina etc. are discussed.

Emerging applications of spark plasma sintering in all solid-state lithium-ion batteries and beyond

Science.gov (United States)

Zhu, Hongzheng; Liu, Jian

2018-07-01

Solid-state batteries have received increasing attention due to their high safety aspect and high energy and power densities. However, the development of solid-state batteries is hindered by inferior solid-solid interfaces between the solid-state electrolyte and electrode, which cause high interfacial resistance, reduced Li-ion and electron transfer rate, and limited battery performance. Recently, spark plasma sintering (SPS) is emerging as a promising technique for fabricating solid-state electrolyte and electrode pellets with clean and intimate solid-solid interfaces. During the SPS process, the unique reaction mechanism through the combination of current, pressure and high heating rate allow the formation of desirable solid-solid interfaces between active material particles. Herein, this work focuses on the overview of the application of SPS for fabricating solid-state electrolyte and electrode in all solid-state Li-ion batteries, and beyond, such as solid-state Li-S and Na-ion batteries. The correlations among SPS parameters, interfacial resistance, and electrochemical properties of solid-state electrolytes and electrodes are discussed for different material systems. In the end, we point out future opportunities and challenges associated with SPS application in the hot area of solid-state batteries. It is expected that this timely review will stimulate more fundamental and applied research in the development of solid-state batteries by SPS.

Fatty acids polymorphism and solid-state miscibility

Energy Technology Data Exchange (ETDEWEB)

Gbabode, Gabin [Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux I, 33405 Talence (France)], E-mail: ggbabode@ulb.ac.be; Negrier, Philippe; Mondieig, Denise [Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux I, 33405 Talence (France); Moreno, Evelyn; Calvet, Teresa; Cuevas-Diarte, Miquel Angel [Departament de Cristallografia, Mineralogia i Diposits Minerals, Universitat de Barcelona, 08028 Barcelona (Spain)

2009-02-05

The pentadecanoic acid-hexadecanoic acid (C{sub 15}H{sub 29}OOH-C{sub 16}H{sub 31}OOH) binary system is dealt with in this article. The polymorphism of 20 mixed materials has been investigated combining calorimetric measurements, isothermal and versus temperature X-ray powder diffraction and also FTIR spectroscopy. In particular, the cell parameters of the stable forms, temperatures and heats of phase changes for the two constituents and a proposal of phase diagram are given in this article. Three solid forms are created by mixing in addition with the four solid forms of the pure components. All these solid forms are stabilized on narrow domains of composition, implying a reduced solid-state miscibility of the pentadecanoic and hexadecanoic acids.

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

Science.gov (United States)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Solid State Division Progress Report for period ending March 31, 1986

International Nuclear Information System (INIS)

Green, P.H.; Watson, D.M.

1986-08-01

This report is divided into: theoretical solid-state physics, surface and near-surface properties of solids, defects in solids, transport properties of solids, neutron scattering, and synthesis and properties of novel materials

Solid-state cultivation of Chaetomium cellulolyticum on alkali-pretreated sawdust

Energy Technology Data Exchange (ETDEWEB)

Pamment, N; Robinson, C W; Hilton, J; Moo-Young, M

1978-11-01

Solid-state fermentations (78% initial moisture content) of alkali-pretreated Eastern Hard Maple sawdust were conducted in tray and tumble fermentors using Chaetomium cellulolyticum. Crude protein content of the solids rose from 0.9 to 11% in the tray fermentor and 8% in the tumble fermentor in 20 days. These levels were almost equal to those achieved in corresponding slurry-state fermentations (1 to 5% (w/v)) of the same substrate. Specific growth rates were two to four times lower in the solid-state fermentors but this was offset by their greater solids-handling capacity: the rate of protein production per unit volume of fermentation mixture was comparable to that of the 5% (w/v) slurry and two to three times higher than that of the 1% (w/v) slurry.

Solid-State Modulators for RF And Fast Kickers

Energy Technology Data Exchange (ETDEWEB)

Cook, E.G.; Akana, G.L.; Gower, E.J.; Hawkins, S.A.; Hickman, B.C.; /LLNL, Livermore; Brooksby, C.A.; /NONE - BECHTEL NEVADA LAS VEGAS; Cassel, R.L.; de Lamare, J.E.; Nguyen, M.N.; Pappas, G.C.; /SLAC

2006-03-14

As the switching capabilities of solid-state devices increase, these devices are being incorporated into modulator designs for high voltage accelerator applications. Solid-state modulators based on inductive adder circuit topology have demonstrated great versatility with regard to pulse width and pulse repetition rate while maintaining fast pulse rise and fall times. Additionally, these modulators are capable of being scaled to higher output voltage and power levels. An explanation of the basic circuit operation will be presented as well as test data of several different hardware systems.

SOLID-STATE MODULATORS FOR RF AND FAST KICKERS

International Nuclear Information System (INIS)

Cook, E G; Akana, G; Gower, E J; Hawkins, S A; Hickman, B C; Brooksby, C A; Cassel, R L; De Lamare, J E; Nguyen, M N; Pappas, G C

2005-01-01

As the switching capabilities of solid-state devices increase, these devices are being incorporated into modulator designs for high voltage accelerator applications. Solid-state modulators based on inductive adder circuit topology have demonstrated great versatility with regard to pulse width and pulse repetition rate while maintaining fast pulse rise and fall times. Additionally, these modulators are capable of being scaled to higher output voltage and power levels. An explanation of the basic circuit operation will be presented as well as test data of several different hardware systems

SOLID-STATE MODULATORS FOR RF AND FAST KICKERS

Energy Technology Data Exchange (ETDEWEB)

Cook, E G; Akana, G; Gower, E J; Hawkins, S A; Hickman, B C; Brooksby, C A; Cassel, R L; De Lamare, J E; Nguyen, M N; Pappas, G C

2005-05-05

As the switching capabilities of solid-state devices increase, these devices are being incorporated into modulator designs for high voltage accelerator applications. Solid-state modulators based on inductive adder circuit topology have demonstrated great versatility with regard to pulse width and pulse repetition rate while maintaining fast pulse rise and fall times. Additionally, these modulators are capable of being scaled to higher output voltage and power levels. An explanation of the basic circuit operation will be presented as well as test data of several different hardware systems.

Solid-State Modulators for RF and Fast Kickers

CERN Document Server

Cook, Edward; Brooksby, Craig A; Cassel, Richard; De Lamare, Jeffrey E; Gower, Edward J; Hawkins, Steven; Hickman, Bradley C; Nguyen, Minh N; Pappas, Chris

2005-01-01

As the capabilities of solid-state devices increase, these devices are being incorporated into modulator designs for high voltage accelerator applications. Solid-state modulators based on inductive adder circuit topology have demonstrated great versatility with regard to pulse width and pulse repetition rate while maintaining fast pulse rise and fall times. Additionally, these modulators are capable of being scaled to higher output voltage and power levels. An explanation of the basic circuit operation will be presented as well as test data of several different hardware systems.

Challenges and perspectives of garnet solid electrolytes for all solid-state lithium batteries

Science.gov (United States)

Liu, Qi; Geng, Zhen; Han, Cuiping; Fu, Yongzhu; Li, Song; He, Yan-bing; Kang, Feiyu; Li, Baohua

2018-06-01

Garnet Li7La3Zr2O12 (LLZO) solid electrolytes recently have attracted tremendous interest as they have the potential to enable all solid-state lithium batteries (ASSLBs) owing to high ionic conductivity (10-3 to 10-4 S cm-1), negligible electronic transport, wide potential window (up to 9 V), and good chemical stability. Here we present the key issues and challenges of LLZO in the aspects of ion conduction property, interfacial compatibility, and stability in air. First, different preparation methods of LLZO are reviewed. Then, recent progress about the improvement of ionic conductivity and interfacial property between LLZO and electrodes are presented. Finally, we list some emerging LLZO-based solid-state batteries and provide perspectives for further research. The aim of this review is to summarize the up-to-date developments of LLZO and lead the direction for future development which could enable LLZO-based ASSLBs.

Sintered Cathodes for All-Solid-State Structural Lithium-Ion Batteries

Science.gov (United States)

Huddleston, William; Dynys, Frederick; Sehirlioglu, Alp

2017-01-01

All-solid-state structural lithium ion batteries serve as both structural load-bearing components and as electrical energy storage devices to achieve system level weight savings in aerospace and other transportation applications. This multifunctional design goal is critical for the realization of next generation hybrid or all-electric propulsion systems. Additionally, transitioning to solid state technology improves upon battery safety from previous volatile architectures. This research established baseline solid state processing conditions and performance benchmarks for intercalation-type layered oxide materials for multifunctional application. Under consideration were lithium cobalt oxide and lithium nickel manganese cobalt oxide. Pertinent characteristics such as electrical conductivity, strength, chemical stability, and microstructure were characterized for future application in all-solid-state structural battery cathodes. The study includes characterization by XRD, ICP, SEM, ring-on-ring mechanical testing, and electrical impedance spectroscopy to elucidate optimal processing parameters, material characteristics, and multifunctional performance benchmarks. These findings provide initial conditions for implementing existing cathode materials in load bearing applications.

Solid State Division Progress Report for period ending March 31, 1986

Energy Technology Data Exchange (ETDEWEB)

Green, P.H.; Watson, D.M. (eds.)

1986-08-01

This report is divided into: theoretical solid-state physics, surface and near-surface properties of solids, defects in solids, transport properties of solids, neutron scattering, and synthesis and properties of novel materials. (DLC)

Solid state detector design

International Nuclear Information System (INIS)

Gunarwan Prayitno; Ahmad Rifai

2010-01-01

Much has been charged particle detector radiation detector made by the industry, especially those engaged in the development of detection equipment and components. The development and further research will be made solid state detector with silicon material. To be able to detect charged particles (radiation), required the processing of silicon material into the detector material. The method used to make silicon detector material is a lithium evaporations. Having formed an intrinsic region contactor installation process, and with testing. (author)

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

Assessment of all-solid-state lithium-ion batteries

Science.gov (United States)

Braun, P.; Uhlmann, C.; Weiss, M.; Weber, A.; Ivers-Tiffée, E.

2018-07-01

All-solid-state lithium-ion batteries (ASSBs) are considered as next generation energy storage systems. A model might be very useful, which describes all contributions to the internal cell resistance, enables an optimization of the cell design, and calculates the performance of an open choice of cell architectures. A newly developed one-dimensional model for ASSBs is presented, based on a design concept which employs the use of composite electrodes. The internal cell resistance is calculated by linking two-phase transmission line models representing the composite electrodes with an ohmic resistance representing the solid electrolyte (separator). Thereby, electrical parameters, i.e. ionic and electronic conductivity, electrochemical parameters, i.e. charge-transfer resistance at interfaces and lithium solid-state diffusion, and microstructure parameters, i.e. electrode thickness, particle size, interface area, phase composition and tortuosity, are considered as the most important material and design parameters. Subsequently, discharge curves are simulated, and energy- and power-density characteristics of all-solid-state cell architectures are calculated. These model calculations are discussed and compared with experimental data from literature for a high power LiCoO2-Li10GeP2S12/Li10GeP2S12/Li4Ti5O12-Li10GeP2S12 cell.

SOLID STATE ENERGY CONVERSION ALLIANCE (SECA) SOLID OXIDE FUEL CELL PROGRAM

Energy Technology Data Exchange (ETDEWEB)

Unknown

2003-06-01

This report summarizes the progress made during the September 2001-March 2002 reporting period under Cooperative Agreement DE-FC26-01NT41245 for the U. S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid State Energy Conversion Alliance (SECA) Solid Oxide Fuel Cell Program''. The program focuses on the development of a low-cost, high-performance 3-to-10-kW solid oxide fuel cell (SOFC) system suitable for a broad spectrum of power-generation applications. The overall objective of the program is to demonstrate a modular SOFC system that can be configured to create highly efficient, cost-competitive, and environmentally benign power plants tailored to specific markets. When fully developed, the system will meet the efficiency, performance, life, and cost goals for future commercial power plants.

Renormalization methods in solid state physics

Energy Technology Data Exchange (ETDEWEB)

Nozieres, P [Institut Max von Laue - Paul Langevin, 38 - Grenoble (France)

1976-01-01

Renormalization methods in various solid state problems (e.g., the Kondo effect) are analyzed from a qualitative vantage point. Our goal is to show how the renormalization procedure works, and to uncover a few simple general ideas (universality, phenomenological descriptions, etc...).

What would Edison do with solid state lighting?

Science.gov (United States)

Ferguson, Ian T.; Melton, Andrew; Xu, Tianming; Jamil, Muhammad; Fenwick, Will

2010-08-01

Thomas Edison is widely regarded as the greatest inventor in history and the most prominent individual behind the invention of the electric light. His impressive characteristics as an individual that led to his amazing success as an innovator continue to be an inspiration for researchers today. This paper considers how Edison might proceed in developing solid state lighting into a technology capable of displacing incumbent light sources, including his own incandescent lamps, then reviews some of the "Edison-like" contributions made to solid state lighting by the Next Generation Lighting research program at Georgia Tech.

The LiBH₄-LiI Solid Solution as an Electrolyte in an All-Solid-State Battery

DEFF Research Database (Denmark)

Sveinbjörnsson, Dadi Þorsteinn; Christiansen, Ane Sælland; Viskinde, Rasmus

2014-01-01

The charge and discharge performance of an all-solid-state lithium battery with the LiBH4-LiI solid solution as an electrolyte is reported. Lithium titanate (Li4Ti5O12) was used as the positive electrode and lithium metal as the negative electrode. The performance of the all-solid-state cell...

Anomalous hall effect in ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Niu, Q.; MacDonald, A. H.

2002-01-01

Roč. 88, č. 20 (2002), s. 207208-1-207208-4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.323, year: 2002

''Solid-state fusion'' effects

International Nuclear Information System (INIS)

Thompson, D.T.

1990-01-01

The ''Solid-State Fusion'' or ''Cold Fusion'' phenomenon, including excess heat generation and the production of nuclear particles, was first reported by Professors Martin Fleischmann and B. Stanley Pons in March 1989. The phenomenon described (the anomalous effects observed when deuterium oxide (heavy water) is electrolysed using a palladium cathode and a platinum anode in the presence of lithium deuteroxide) has many fascinating facets, not least of which is the fact that investigators are unable to produce the effects ''on demand''. Many of the experimental variables which seem to be significant were described and discussed at the ''First Annual Conference on Cold Fusion'' which was held in Salt Lake City, Utah, USA, from 29th to 31st March 1990. The information presented at the conference is summarised here. Some papers addressed the excess heat effects observed, some the nuclear particles, and others the theoretical aspects. These are reviewed. At the end of the conference Fleischmann summarised all the areas where apparent evidence for solid state fusion had been obtained during the past year, namely: excess enthalpy, bursts in enthalpy; tritium, bursts in tritium; neutrons, bursts in neutrons; X-rays, gamma rays and bursts in these. He recommended that emphasis should now be concentrated on confirming reaction products, such as He 4 . New theories were emerging, but one year was too short a time in which to evaluate them fully. (author)

Interim report on the state-of-the-art of solid-state motor controllers. Part 4. Failure-rate and failure-mode data

International Nuclear Information System (INIS)

Jaross, R.A.

1983-09-01

An assessment of the reliability of solid-state motor controllers for nuclear power plants is made. Available data on failure-rate and failure-mode data for solid-state motor controllers based on industrial operating experience is meager; the data are augmented by data on other solid-state power electronic devices that are shown to have components similar to those found in solid-state motor controllers. In addition to large nonnuclear solid-state adjustable-speed motor drives, the reliability of nuclear plant inverter systems and high-voltage solid-state dc transmission-line converters is assessed. Licensee Event Report analyses from several sources, the open literature, and personal communications are used to determine the realiability of solid-state devices typical of those expected to be used in nuclear power plants in terms of failures per hour

High Energy Solid State Laser Research Facility

Data.gov (United States)

Federal Laboratory Consortium — A suite of laboratories with advanced spectroscopic and laser equipment, this facility develops materials and techniques for advanced solid state high energy lasers....

Pulsed Power for Solid-State Lasers

Energy Technology Data Exchange (ETDEWEB)

Gagnon, W; Albrecht, G; Trenholme, J; Newton, M

2007-04-19

Beginning in the early 1970s, a number of research and development efforts were undertaken at U.S. National Laboratories with a goal of developing high power lasers whose characteristics were suitable for investigating the feasibility of laser-driven fusion. A number of different laser systems were developed and tested at ever larger scale in pursuit of the optimum driver for laser fusion experiments. Each of these systems had associated with it a unique pulsed power option. A considerable amount of original and innovative engineering was carried out in support of these options. Ultimately, the Solid-state Laser approach was selected as the optimum driver for the application. Following this, the Laser Program at the Lawrence Livermore National Laboratory and the University of Rochester undertook aggressive efforts directed at developing the technology. In particular, at Lawrence Livermore National Laboratory, a series of laser systems beginning with the Cyclops laser and culminating in the present with the National Ignition Facility were developed and tested. As a result, a large amount of design information for solid-state laser pulsed power systems has been documented. Some of it is in the form of published papers, but most of it is buried in internal memoranda, engineering reports and LLNL annual reports. One of the goals of this book is to gather this information into a single useable format, such that it is easily accessed and understood by other engineers and physicists for use with future designs. It can also serve as a primer, which when seriously studied, makes the subsequent reading of original work and follow-up references considerably easier. While this book deals only with the solid-state laser pulsed power systems, in the bibliography we have included a representative cross section of papers and references from much of the very fine work carried out at other institutions in support of different laser approaches. Finally, in recent years, there has

Proceedings of 5. scientific conference on solid state physics. Vol. 2

International Nuclear Information System (INIS)

1999-01-01

The 5. Kazakhstan scientific conference on solid state physics was held on 28-30 October, 1999 in Karaganda. Scientists and researchers from Russian Federation, Kazakhstan, Estonia present various reports on different problems of solid state physics

Phosphate Phosphors for Solid-State Lighting

CERN Document Server

Shinde, Kartik N; Swart, H C; Park, Kyeongsoon

2012-01-01

The idea for this book arose out of the realization that, although excellent surveys and a phosphor handbook are available, there is no single source covering the area of phosphate based phosphors especially for lamp industry. Moreover, as this field gets only limited attention in most general books on luminescence, there is a clear need for a book in which attention is specifically directed toward this rapidly growing field of solid state lighting and its many applications. This book is aimed at providing a sound introduction to the synthesis and optical characterization of phosphate phosphor for undergraduate and graduate students as well as teachers and researchers. The book provides guidance through the multidisciplinary field of solid state lighting specially phosphate phosphors for beginners, scientists and engineers from universities, research organizations, and especially industry. In order to make it useful for a wide audience, both fundamentals and applications are discussed, together.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Solid-State NMR Investigation of Drug-Excipient Interactions and Phase Behavior in Indomethacin-Eudragit E Amorphous Solid Dispersions.

Science.gov (United States)

Lubach, Joseph W; Hau, Jonathan

2018-02-20

To investigate the nature of drug-excipient interactions between indomethacin (IMC) and methacrylate copolymer Eudragit® E (EE) in the amorphous state, and evaluate the effects on formulation and stability of these amorphous systems. Amorphous solid dispersions containing IMC and EE were spray dried with drug loadings from 20% to 90%. PXRD was used to confirm the amorphous nature of the dispersions, and DSC was used to measure glass transition temperatures (T g ). 13 C and 15 N solid-state NMR was utilized to investigate changes in local structure and protonation state, while 1 H T 1 and T 1ρ relaxation measurements were used to probe miscibility and phase behavior of the dispersions. T g values for IMC-EE solid dispersions showed significant positive deviations from predicted values in the drug loading range of 40-90%, indicating a relatively strong drug-excipient interaction. 15 N solid-state NMR exhibited a change in protonation state of the EE basic amine, with two distinct populations for the EE amine at -360.7 ppm (unprotonated) and -344.4 ppm (protonated). Additionally, 1 H relaxation measurements showed phase separation at high drug load, indicating an amorphous ionic complex and free IMC-rich phase. PXRD data showed all ASDs up to 90% drug load remained physically stable after 2 years. 15 N solid-state NMR experiments show a change in protonation state of EE, indicating that an ionic complex indeed forms between IMC and EE in amorphous solid dispersions. Phase behavior was determined to exhibit nanoscale phase separation at high drug load between the amorphous ionic complex and excess free IMC.

Division of solid state physics

International Nuclear Information System (INIS)

Beckman, O.

1983-09-01

This report gives a survey of the present research projects at the division of solid state physics, Inst. of Technology, Uppsala University. The projects fall within the fields of magnetism, i.e. spin glasses, ordered magnetic structures and itinerant electron magnetism, and optics, i.e. properties of crystalline and amorphous materials for selective transmission and absorption in connection with energy-related research. (author)

Solid-state fermentation: a continuous process for fungal tannase production.

Science.gov (United States)

van de Lagemaat, J; Pyle, D L

2004-09-30

Truly continuous solid-state fermentations with operating times of 2-3 weeks were conducted in a prototype bioreactor for the production of fungal (Penicillium glabrum) tannase from a tannin-containing model substrate. Substantial quantities of the enzyme were synthesized throughout the operating periods and (imperfect) steady-state conditions seemed to be achieved soon after start-up of the fermentations. This demonstrated for the first time the possibility of conducting solid-state fermentations in the continuous mode and with a constant noninoculated feed. The operating variables and fermentation conditions in the bioreactor were sufficiently well predicted for the basic reinoculation concept to succeed. However, an incomplete understanding of the microbial mechanisms, the experimental system, and their interaction indicated the need for more research in this novel area of solid-state fermentation. Copyright 2004 Wiley Periodicals, Inc.

Advances in defect characterizations of semiconductors using positrons

International Nuclear Information System (INIS)

Lynn, K.G.; Asoka-Kumar, P.

1996-01-01

Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Science.gov (United States)

Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.

2017-11-01

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Organic Molecular Solids

CERN Document Server

Schwoerer, Marcus

2007-01-01

This is the first comprehensive textbook on the physical aspects of organic solids. All phenomena which are necessary in order to understand modern technical applications are being dealt with in a way which makes the concepts of the topics accessible for students. The chapters - from the basics, production and characterization of organic solids and layers to organic semiconductors, superconductors and opto-electronical applications - have been arranged in a logical and well thought-out order.

Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

CERN Document Server

Topolov, Vitaly

2012-01-01

The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

Solid-state NMR studies of form I of atorvastatin calcium.

Science.gov (United States)

Wang, Wei David; Gao, Xudong; Strohmeier, Mark; Wang, Wei; Bai, Shi; Dybowski, Cecil

2012-03-22

Solid-state (13)C, (19)F, and (15)N magic angle spinning NMR studies of Form I of atorvastatin calcium are reported, including chemical shift tensors of all resolvable carbon sites and fluorine sites. The complete (13)C and (19)F chemical shift assignments are given based on an extensive analysis of (13)C-(1)H HETCOR and (13)C-(19)F HETCOR results. The solid-state NMR data indicate that the asymmetric unit of this material contains two atorvastatin molecules. A possible structure of Form I of atorvastatin calcium (ATC-I), derived from solid-state NMR data and density functional theory calculations of various structures, is proposed for this important active pharmaceutical ingredient (API).

Microelectronics: Atoms diffusion in solid state. Part 1

International Nuclear Information System (INIS)

Lopez Higuera, J.M.

1988-01-01

The fundamentals on which the technology for the diffusion of impurities in solid state is based, is presented. This technology is widely used to produce controlled and localized concentrations of atoms of the mentioned impurities in base solids in order to obtain those characteristics which may lead to the implementation of electronic, optoelectronic and electrooptic devices. (Author)

Advanced Solid State Lighting for Human Evaluation

Data.gov (United States)

National Aeronautics and Space Administration — Lighting intensity and color have a significant impact on human circadian rhythms.  Advanced solid state lighting was developed for the Advanced Exploration System...

Production of organic-semiconductor nanostructures by solid-phase wetting. Guided growth, molecular data storage, and local coadsorption; Erzeugung organischer Halbleiter-Nanostrukturen durch Festphasenbenetzung. Gefuehrtes Wachstum, molekulare Datenspeicherung und lokale Koadsorption

Energy Technology Data Exchange (ETDEWEB)

Trixler, Frank

2007-09-10

The present thesis treats questions from the interdisciplinary field of nanosciences by studies by means of scanning tunneling microscopy and computer chemistry. The main part of this thesis is the presentation of a novel structure formation process on molecular level. The presented model describes this process by nanocrystals, which show - suspended in a matrix - in contact with a crystal surface a behaviour, which is in spite present solid-state properties (crystalline order) similar to the behaviour of liquid drops in the wetting of surfaces. Starting from this the technological potential of this new process is made accessible.: 1.) Adsorbate structures of a series of organic semiconductors are described for the first time. By this it is additionally shown that by supramolecular solid-phase wetting unsolvable semiconductor molecules can be very simply and under environmental conditions orderedly adsorbed. 2.) An explanation model is developed, by which the hitherto not understandable molecular data storage by means of PTCDA molecules can be theoretically explained and extended to further molecules. 3.) The development of a nanofabrication concept is presented, which allows a local control of the growth of nanostructures. The advance against a classical molecule-for-molecule performed nanostructuration lies therein that by the tip of a scanning tunneling microscope solely the information of growth directions is locally to be brought into the system, the actual formation of the structures however takes place by independently running and by this qualitatively and timely highly efficient growth processes. 4.) A procedure is presented, which allows a local adsorption of molecules to ordered layers within a layer of other molecules and by this makes possible the formation of heterogeneous adsorbate layers.

Femtosecond time-resolved two-photon photoemission study of organic semiconductor copper phthalocyanine film

International Nuclear Information System (INIS)

Tanaka, A.; Tohoku University; University of Rochester, NY; Yan, L.; Watkins, N.J.; Gao, Y.

2004-01-01

Full text: Organic semiconductors are recently attracting much interest from the viewpoints of both device and fundamental physics. These organic semiconductors are considered to be important constituents of the future devices, such as organic light-emitting diode, organic field effect transistor, and organic solid-state injection laser. In order to elucidate their detailed physical properties and to develop the future devices, it is indispensable to understand their excited-state dynamics as well as their electronic structures. The femtosecond time-resolved two-photon photoemission (TR-2PPE) spectroscopy is attracting much interest because of its capability to observe the energy-resolved excited electron dynamics. In this work, we have carried out a TR-2PPE study of the organic semiconductor copper phthalocyanine (CuPc) film. Furthermore, we have investigated the detailed electronic structure of CuPc film using the photoemission (PES) and inverse photoemission (IPES) spectroscopies. From the simultaneous PES and IPES measurements for CuPc film with a thickness of 100 nm, the lowest unoccupied molecular orbital (LUMO), highest occupied molecular orbital, and ionization potential of CuPc film have been directly determined. The observed two-photon photoemission (2PPE) spectrum of the present CuPc film, measured with photon energy of about hv=3.3 eV, exhibits a broad feature. From the energy diagram of CuPc film determined by the PES and IPES measurements, the intermediate state observed in the present 2PPE spectrum of CuPc film corresponds to the energy region between about 0.4 and 1.7 eV above the LUMO energy. From the time-resolved pump-probe measurements, it is found that the relaxation lifetimes of excited states in the present CuPc films are very short (all below 50 fs) and monotonously become faster with increasing excitation energy. We attribute this extremely fast relaxation process of photoexcitation to a rapid internal conversion process. From these results

High power all solid state VUV lasers

International Nuclear Information System (INIS)

Zhang, Shen-jin; Cui, Da-fu; Zhang, Feng-feng; Xu, Zhi; Wang, Zhi-min; Yang, Feng; Zong, Nan; Tu, Wei; Chen, Ying; Xu, Hong-yan; Xu, Feng-liang; Peng, Qin-jun; Wang, Xiao-yang; Chen, Chuang-tian; Xu, Zu-yan

2014-01-01

Highlights: • Polarization and pulse repetition rate adjustable ps 177.3 nm laser was developed. • Wavelength tunable ns, ps and fs VUV lasers were developed. • High power ns 177.3 nm laser with narrow linewidth was investigated. - Abstract: We report the investigation on the high power all solid state vacuum ultra-violet (VUV) lasers by means of nonlinear frequency conversion with KBe 2 BO 3 F 2 (KBBF) nonlinear crystal. Several all solid state VUV lasers have developed in our group, including polarization and pulse repetition rate adjustable picosecond 177.3 nm VUV laser, wavelength tunable nanosecond, picosecond and femtosecond VUV lasers, high power ns 177.3 nm laser with narrow linewidth. The VUV lasers have impact, accurate and precise advantage

Electronic structure of filled tetrahedral semiconductors

NARCIS (Netherlands)

Wood, D.M.; Zunger, Alex; Groot, R. de

1985-01-01

We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors

Fundamental characteristics of degradation-recoverable solid-state DFB polymer laser.

Science.gov (United States)

Yoshioka, Hiroaki; Yang, Yu; Watanabe, Hirofumi; Oki, Yuji

2012-02-13

A novel solid-state dye laser with degradation recovery was proposed and demonstrated. Polydimethylsiloxane was used as a nanoporous solid matrix to enable the internal circulation of dye molecules in the solid state. An internal circulation model for the dye molecules was also proposed and verified numerically by assuming molecular mobility and using a proposed diffusion equation. The durability of the laser was increased 20.5-fold compared with that of a conventional polymethylmethacrylate laser. This novel laser solves the low-durability problem of dye-doped polymer lasers.

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Czech Academy of Sciences Publication Activity Database

Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

2002-01-01

Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

International Nuclear Information System (INIS)

Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

2014-01-01

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

Solid-state fermentation - A mini review

NARCIS (Netherlands)

Smits, J.P.; Sonsbeek, H.M.; Rinzema, A.; Tramper, J.

1998-01-01

The increasing interests in biotechnology for the application of fungi on the one hand, and for cheap agricultural products on the other, can be combined in so-called solid-state fermentation (SSF). SSF resembles a close to natural habitat for filamentous microorganisms and can be applied to

Low-temperature solid-state preparation of ternary CdS/g-C3N4/CuS nanocomposites for enhanced visible-light photocatalytic H2-production activity

Science.gov (United States)

Cheng, Feiyue; Yin, Hui; Xiang, Quanjun

2017-01-01

Low-temperature solid-state method were gradually demonstrated as a high efficiency, energy saving and environmental protection strategy to fabricate composite semiconductor materials. CdS-based multiple composite photocatalytic materials have attracted increasing concern owning to the heterostructure constituents with tunable band gaps. In this study, the ternary CdS/g-C3N4/CuS composite photocatalysts were prepared by a facile and novel low-temperature solid-state strategy. The optimal ternary CdS/g-C3N4/CuS composite exhibits a high visible-light photocatalytic H2-production rate of 57.56 μmol h-1 with the corresponding apparent quantum efficiency reaches 16.5% at 420 nm with Na2S/Na2SO3 mixed aqueous solution as sacrificial agent. The ternary CdS/g-C3N4/CuS composites show the enhanced visible-light photocatalytic H2-evolution activity comparing with the binary CdS-based composites or simplex CdS. The enhanced photocatalytic activity is ascribed to the heterojunctions and the synergistic effect of CuS and g-C3N4 in promotion of the charge separation and charge mobility. This work shows that the low-temperature solid-state method is efficient and environmentally benign for the preparation of CdS-based multiple composite photocatalytic materials with enhanced visible-light photocatalytic H2-production activity.

Solid-state single-photon emitters

Science.gov (United States)

Aharonovich, Igor; Englund, Dirk; Toth, Milos

2016-10-01

Single-photon emitters play an important role in many leading quantum technologies. There is still no 'ideal' on-demand single-photon emitter, but a plethora of promising material systems have been developed, and several have transitioned from proof-of-concept to engineering efforts with steadily improving performance. Here, we review recent progress in the race towards true single-photon emitters required for a range of quantum information processing applications. We focus on solid-state systems including quantum dots, defects in solids, two-dimensional hosts and carbon nanotubes, as these are well positioned to benefit from recent breakthroughs in nanofabrication and materials growth techniques. We consider the main challenges and key advantages of each platform, with a focus on scalable on-chip integration and fabrication of identical sources on photonic circuits.

Development of the plastic solid-dye cell for tunable solid-state dye lasers and study on its optical properties

Energy Technology Data Exchange (ETDEWEB)

Ko, Do Kyeong; Lee, Jong Min; Cha, Byung Heon; Yi, Jong Hoon; Lee, Kang Soo; Kim, Sung Ho; Lim, Gwon

2000-01-01

We have fabricated solid-state dyes with Copolex NK-55, which is the base element of plastic lens, and PMMA. We have measured the longevity of solid-state dyes doped in both polymers and found that PMMA has better properties than Coploex NK-55. We have realized the tuning range of 560-620 nm by doping rhodamine 6Gand rhodamin B in the manufactured solid-state dye laser oscillators. In the standing-wave cavity we achieved the slop efficiency of 10.8 percent and in the grazing incidence cavity, 1.2 percent. We have constructed a very compact grazing- incidence cavity which is only 6 cm long and the linewidth of the laser was less than 1.5 GHz with 3-ns pulse duration. And we have fabricated disk-type solid-state dye cell and installed it in the cavity in which the dye cell can be translated and rotated with the help of the two steeping motors. By this we could constantly changed the illuminated area of the dye cell and , therefore, were able to achieve long time operation and to use almost the entire region of the solid-state dye cell. (author)

Development of the plastic solid-dye cell for tunable solid-state dye lasers and study on its optical properties

International Nuclear Information System (INIS)

Ko, Do Kyeong; Lee, Jong Min; Cha, Byung Heon; Yi, Jong Hoon; Lee, Kang Soo; Kim, Sung Ho; Lim, Gwon

2000-01-01

We have fabricated solid-state dyes with Copolex NK-55, which is the base element of plastic lens, and PMMA. We have measured the longevity of solid-state dyes doped in both polymers and found that PMMA has better properties than Coploex NK-55. We have realized the tuning range of 560-620 nm by doping rhodamine 6G and rhodamin B in the manufactured solid-state dye laser oscillators. In the standing-wave cavity we achieved the slop efficiency of 10.8 percent and in the grazing incidence cavity, 1.2 percent. We have constructed a very compact grazing- incidence cavity which is only 6 cm long and the linewidth of the laser was less than 1.5 GHz with 3-ns pulse duration. And we have fabricated disk-type solid-state dye cell and installed it in the cavity in which the dye cell can be translated and rotated with the help of the two steeping motors. By this we could constantly changed the illuminated area of the dye cell and , therefore, were able to achieve long time operation and to use almost the entire region of the solid-state dye cell. (author)

MgO-hybridized TiO{sub 2} interfacial layers assisting efficiency enhancement of solid-state dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Sakai, Nobuya; Ikegami, Masashi; Miyasaka, Tsutomu, E-mail: miyasaka@toin.ac.jp [Graduate School of Engineering, Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, Kanagawa 225-8502 (Japan)

2014-02-10

Interfacial modification of a thin TiO{sub 2} compact layer (T-CL) by hybridization with MgO enhanced the quantum conversion efficiency of solid-state dye-sensitized solar cells (ssDSSCs) comprising a multilayer structure of transparent electrode/T-CL/dye-sensitized mesoporous TiO{sub 2}/hole conductor/metal counter electrode. The Mg(CH{sub 3}COO){sub 2} treatment was employed to introduce a MgO-TiO{sub 2} CL (T/M-CL), which enhanced the physical connection and conduction between the CL and mesoporous semiconductor layer as a consecutive interface, owing to the dehydration reaction of Mg(CH{sub 3}COO){sub 2}. The photocurrent density of ssDSSC was increased 33% by the T/M-CL compared with the T-CL, using an equivalent amount of adsorbed dye. The ssDSSC with the T/M-CL yielded the highest efficiency of 4.02% under irradiation at 100 mW cm{sup −2}. The electrical impedance spectroscopy showed that the charge-transfer resistance (R{sub ct}) of the photoelectrode with T/M-CL was reduced by 300 Ω from the reference non-treated T-CL electrode. Characterized by the intrinsically low R{sub ct} of the compact layer, the T/M-CL is capable of improving the photovoltaic performance of solid-state sensitized mesoscopic solar cells.

Mathematical modeling of ethanol production in solid-state fermentation based on solid medium' dry weight variation.

Science.gov (United States)

Mazaheri, Davood; Shojaosadati, Seyed Abbas; Zamir, Seyed Morteza; Mousavi, Seyyed Mohammad

2018-04-21

In this work, mathematical modeling of ethanol production in solid-state fermentation (SSF) has been done based on the variation in the dry weight of solid medium. This method was previously used for mathematical modeling of enzyme production; however, the model should be modified to predict the production of a volatile compound like ethanol. The experimental results of bioethanol production from the mixture of carob pods and wheat bran by Zymomonas mobilis in SSF were used for the model validation. Exponential and logistic kinetic models were used for modeling the growth of microorganism. In both cases, the model predictions matched well with the experimental results during the exponential growth phase, indicating the good ability of solid medium weight variation method for modeling a volatile product formation in solid-state fermentation. In addition, using logistic model, better predictions were obtained.

40 CFR 256.02 - Scope of the State solid waste management plan.

Science.gov (United States)

2010-07-01

... 40 Protection of Environment 24 2010-07-01 2010-07-01 false Scope of the State solid waste management plan. 256.02 Section 256.02 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES GUIDELINES FOR DEVELOPMENT AND IMPLEMENTATION OF STATE SOLID WASTE MANAGEMENT PLANS Purpose, General Requirements, Definitions § 256.0...

SOLID STATE ENERGY CONVERSION ALLIANCE (SECA) SOLID OXIDE FUEL CELL PROGRAM

Energy Technology Data Exchange (ETDEWEB)

Nguyen Minh; Jim Powers

2003-10-01

This report summarizes the work performed for April 2003--September 2003 reporting period under Cooperative Agreement DE-FC26-01NT41245 for the U.S. Department of Energy, National Energy Technology Laboratory (DOE/NETL) entitled ''Solid State Energy Conversion Alliance (SECA) Solid oxide Fuel Cell Program''. During this reporting period, the conceptual system design activity was completed. The system design, including strategies for startup, normal operation and shutdown, was defined. Sealant and stack materials for the solid oxide fuel cell (SOFC) stack were identified which are capable of meeting the thermal cycling and degradation requirements. A cell module was tested which achieved a stable performance of 0.238 W/cm{sup 2} at 95% fuel utilization. The external fuel processor design was completed and fabrication begun. Several other advances were made on various aspects of the SOFC system, which are detailed in this report.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Solid state optical microscope

Science.gov (United States)

Young, Ian T.

1983-01-01

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

Onset of itinerant ferromagnetism associated with semiconductor ...

Indian Academy of Sciences (India)

In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

High average power solid state laser power conditioning system

International Nuclear Information System (INIS)

Steinkraus, R.F.

1987-01-01

The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers

Diode-pumped solid state laser for inertial fusion energy

International Nuclear Information System (INIS)

Payne, S.A.; Krupke, W.F.; Orth, C.D.

1994-11-01

The authors evaluate the prospect for development of a diode-pumped solid-state-laser driver in an inertial fusion energy power plant. Using a computer code, they predict that their 1 GWe design will offer electricity at 8.6 cents/kW · hr with the laser operating at 8.6% efficiency and the recycled power level at 31%. The results of their initial subscale experimental testbed of a diode-pumped solid state laser are encouraging, demonstrating good efficiencies and robustness

Synergies Connecting the Photovoltaics and Solid-State Lighting Industries

Energy Technology Data Exchange (ETDEWEB)

Kurtz, S.

2003-05-01

Recent increases in the efficiencies of phosphide, nitride, and organic light-emitting diodes (LEDs) inspire a vision of a revolution in lighting. If high efficiencies, long lifetimes, and low cost can be achieved, solid-state lighting could save our country many quads of electricity in the coming years. The solid-state lighting (SSL) and photovoltaic (PV) industries share many of the same challenges. This paper explores the similarities between the two industries and how they might benefit by sharing information.

Semiconductor-inspired design principles for superconducting quantum computing.

Science.gov (United States)

Shim, Yun-Pil; Tahan, Charles

2016-03-17

Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.

Excited state populations and charge-exchange of fast ions in solids

International Nuclear Information System (INIS)

Miller, P.D.; Sofield, C.J.; Woods, C.J.

1984-01-01

Excited state populations and charge state fractions of 445 MeV Cl ions have been measured for a range of thicknesses of solid C targets. Cross sections for electron capture, loss, excitation and excited state quenching have been determined and these data are found to predict a quantitative difference between equilibrium charge state distributions from gases and solids for a special case of the Bohr-Lindhard density effect model. 8 references, 1 figure, 1 table

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

A multi-phase equation of state for solid and liquid lead

International Nuclear Information System (INIS)

Robinson, C.M.

2004-01-01

This paper considers a multi-phase equation of state for solid and liquid lead. The thermodynamically consistent equation of state is constructed by calculating separate equations of state for the solid and liquid phases. The melt curve is the curve in the pressure, temperature plane where the Gibb's free energy of the solid and liquid phases are equal. In each phase a complete equation of state is obtained using the assumptions that the specific heat capacity is constant and that the Grueneisen parameter is proportional to the specific volume. The parameters for the equation of state are obtained from experimental data. In particular they are chosen to match melt curve and principal Hugoniot data. Predictions are made for the shock pressure required for melt to occur on shock and release

Advances in solid-state NMR of cellulose.

Science.gov (United States)

Foston, Marcus

2014-06-01

Nuclear magnetic resonance (NMR) spectroscopy is a well-established analytical and enabling technology in biofuel research. Over the past few decades, lignocellulosic biomass and its conversion to supplement or displace non-renewable feedstocks has attracted increasing interest. The application of solid-state NMR spectroscopy has long been seen as an important tool in the study of cellulose and lignocellulose structure, biosynthesis, and deconstruction, especially considering the limited number of effective solvent systems and the significance of plant cell wall three-dimensional microstructure and component interaction to conversion yield and rate profiles. This article reviews common and recent applications of solid-state NMR spectroscopy methods that provide insight into the structural and dynamic processes of cellulose that control bulk properties and biofuel conversion. Copyright © 2014 Elsevier Ltd. All rights reserved.

Solid state dye-sensitized solar cells. Current state of the art. Challenges and opportunities

Energy Technology Data Exchange (ETDEWEB)

Lenzmann, F.O.; Olson, C.L.; Goris, M.J.A.A.; Kroon, J.M. [ECN Solar Energy, Petten (Netherlands)

2008-09-15

The first generation of dye-sensitized solar cell technology is based on a liquid electrolyte component. Today, this technology is on the verge of commercialization. The step towards the market and real applications is supported by the prospect of low manufacturing costs, good efficiency as well as the expectation that the current stability level of this technology is at least sufficient for applications in mobile electronics. These favorable developments may be reinforced and accelerated even further, if the corrosive liquid electrolyte could be replaced by a non-corrosive solid, since this would ease a number of stringent requirements in the production process. A successful exchange of the liquid electrolyte by a solid-state holeconductor requires to at least maintain, preferably improve, the most relevant technical parameters of the solar cell (efficiency, stability, cost). First pioneering work with solid-state hole conductors was carried out 10 years ago with an initial efficiency level below 1%. Until 2007, the record efficiency could be improved to 5%. This paper gives an overview of the solid-state concept as an early stage approach with good perspectives for the mid-term future (5-10 years)

Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors