Correction method and software for image distortion and nonuniform response in charge-coupled device-based x-ray detectors utilizing x-ray image intensifier

International Nuclear Information System (INIS)

Ito, Kazuki; Kamikubo, Hironari; Yagi, Naoto; Amemiya, Yoshiyuki

2005-01-01

An on-site method of correcting the image distortion and nonuniform response of a charge-coupled device (CCD)-based X-ray detector was developed using the response of the imaging plate as a reference. The CCD-based X-ray detector consists of a beryllium-windowed X-ray image intensifier (Be-XRII) and a CCD as the image sensor. An image distortion of 29% was improved to less than 1% after the correction. In the correction of nonuniform response due to image distortion, subpixel approximation was performed for the redistribution of pixel values. The optimal number of subpixels was also discussed. In an experiment with polystyrene (PS) latex, it was verified that the correction of both image distortion and nonuniform response worked properly. The correction for the 'contrast reduction' problem was also demonstrated for an isotropic X-ray scattering pattern from the PS latex. (author)

Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

Energy Technology Data Exchange (ETDEWEB)

Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

2014-08-15

The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

Seven channel gated charge to time converter

Energy Technology Data Exchange (ETDEWEB)

Stubbs, R J; Waddoup, W D [Durham Univ. (UK)

1977-11-01

By using a hybrid integrated circuit seven independent gated charge to time converters have been constructed in a single width NIM module. Gate widths from < approximately 10 ns to approximately 300 ns are possible with a resolution of 0.25 pC, linearity is better than +-1 pC over 2.5 decades of input signal height. Together with a multichannel scaling system described in the following paper one has a very powerful multichannel gated ADC system.

Mechanism of electromechanical coupling in voltage-gated potassium channels

Directory of Open Access Journals (Sweden)

Rikard eBlunck

2012-09-01

Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

Radiation effects in charge coupled devices

International Nuclear Information System (INIS)

Williams, R.A.; Nelson, R.D.

1975-01-01

Charge coupled devices (CCD s) exhibit a number of advantages (low cost, low power, high bit density) in their several applications (serial memories, imagers, digital filters); however, fairly elementary theoretical considerations indicate that they will be very vulnerable to permanent radiation damage, by both neutrons and ionizing radiation, and to transient upset by pulsed ionizing radiation. Although studies of permanent ionizing-radiation damage in CCD's have been reported, little information has been published concerning their overall nuclear radiation vulnerability. This paper presents a fairly comprehensive experimental study of radiation effects in a 256-cell surface-channel, CCD shift-register. A limited amount of similar work is also presented for a 128-cell surface-channel device and a 130 cell peristaltic CCD shift register. The radiation effects phenomena discussed herein, include transient-ionizing-radiation responses, permanent ionizing- radiation damage to transfer efficiency, charge-carrying capacity and input transfer gate bias, and neutron damage to storage time--determined from dark current and charge-up time measurements

Spatial distribution of electrons on a superfluid helium charge-coupled device

International Nuclear Information System (INIS)

Takita, Maika; Bradbury, F R; Lyon, S A; Gurrieri, T M; Wilkel, K J; Eng, Kevin; Carroll, M S

2012-01-01

Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking 10 9 pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.

Charge immobilization of the voltage sensor in domain IV is independent of sodium current inactivation.

Science.gov (United States)

Sheets, Michael F; Hanck, Dorothy A

2005-02-15

Recovery from fast inactivation in voltage-dependent Na+ channels is associated with a slow component in the time course of gating charge during repolarization (i.e. charge immobilization), which results from the slow movement of the S4 segments in domains III and IV (S4-DIII and S4-DIV). Previous studies have shown that the non-specific removal of fast inactivation by the proteolytic enzyme pronase eliminated charge immobilization, while the specific removal of fast inactivation (by intracellular MTSET modification of a cysteine substituted for the phenylalanine in the IFM motif, ICMMTSET, in the inactivation particle formed by the linker between domains III and IV) only reduced the amount of charge immobilization by nearly one-half. To investigate the molecular origin of the remaining slow component of charge immobilization we studied the human cardiac Na+ channel (hH1a) in which the outermost arginine in the S4-DIV, which contributes approximately 20% to total gating charge (Qmax), was mutated to a cysteine (R1C-DIV). Gating charge could be fully restored in R1C-DIV by exposure to extracellular MTSEA, a positively charged methanethiosulphonate reagent. The RIC-DIV mutation was combined with ICMMTSET to remove fast inactivation, and the gating currents of R1C-DIV-ICM(MTSET) were recorded before and after modification with MTSEAo. Prior to MTSEAo, the time course of the gating charge during repolarization (off-charge) was best described by a single fast time constant. After MTSEA, the off-charge had both fast and slow components, with the slow component accounting for nearly 35% of Qmax. These results demonstrate that the slow movement of the S4-DIV during repolarization is not dependent upon the normal binding of the inactivation particle.

Voltage-Dependent Gating of hERG Potassium Channels

Science.gov (United States)

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Voltage-dependent gating of hERG potassium channels

Directory of Open Access Journals (Sweden)

Yen May eCheng

2012-05-01

Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

A high-resolution detector based on liquid-core scintillating fibres with readout via an electron-bombarded charge-coupled device

International Nuclear Information System (INIS)

Cianfarani, C.; Duane, A.; Fabre, J.P.; Frenkel, A.; Golovkin, S.V.; Gorin, A.M.; Harrison, K.; Kozarenko, E.N.; Kushnirenko, A.E.; Ladygin, E.A.; Martellotti, G.; Medvedkov, A.M.; Nass, P.A.; Obudovski, V.P.; Penso, G.; Petukhov, Yu.P.; Siegmund, W.P.; Tyukov, V.E.; Vasilchenko, V.G.

1994-01-01

This paper is a presentation of results from tests in a 5 GeV/c hadron beam of detectors based on liquid-core scintillating fibres, each fibre consisting of a glass capillary filled with organic liquid scintillator. Fibre readout was performed via an Electron-Bombarded Charge-Coupled Device (EBCCD) image tube, a novel instrument that combines the functions of a high-gain, gated image intensifier and a Charge-Coupled Device. Using 1-methylnaphthalene doped with 3 g/l of R45 as liquid scintillator, the attenuation lengths obtained for light propagation over distances greater than 16 cm were 1.5 m in fibres of 20 μm core and 1.0 m in fibres of 16 μm core. For particles that crossed the fibres of 20 μm core at distances of ∼1.8 cm and ∼95 cm from the fibres' readout ends, the recorded hit densities were 5.3 mm -1 and 2.5 mm -1 respectively. Using 1-methylnaphthalene doped with 3.6 g/l of R39 as liquid scintillator and fibres of 75 μm core, the hit density obtained for particles that crossed the fibres at a distance of ∼1.8 cm from their readout ends was 8.5 mm -1 . With a specially designed bundle of tapered fibres, having core diameters that smoothly increase from 16 μm to 75 μm, a spatial precision of 6 μm was measured. (orig.)

Fast and high-fidelity entangling gate through parametrically modulated longitudinal coupling

Directory of Open Access Journals (Sweden)

Baptiste Royer

2017-05-01

Full Text Available We investigate an approach to universal quantum computation based on the modulation of longitudinal qubit-oscillator coupling. We show how to realize a controlled-phase gate by simultaneously modulating the longitudinal coupling of two qubits to a common oscillator mode. In contrast to the more familiar transversal qubit-oscillator coupling, the magnitude of the effective qubit-qubit interaction does not rely on a small perturbative parameter. As a result, this effective interaction strength can be made large, leading to short gate times and high gate fidelities. We moreover show how the gate infidelity can be exponentially suppressed with squeezing and how the entangling gate can be generalized to qubits coupled to separate oscillators. Our proposal can be realized in multiple physical platforms for quantum computing, including superconducting and spin qubits.

Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

Science.gov (United States)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Kamata, Toshihide; Hasegawa, Tatsuo

2018-04-01

In this work, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs). We conduct highly sensitive and diffraction-limit gate-modulation sensing for acquiring difference images of semiconducting channels between at gate-on and gate-off states that are biased at an alternate frequency of 15 Hz. As a result, we observe unexpectedly inhomogeneous distribution of positive and negative local gate-modulation (GM) signals at a probe photon energy of 1.85 eV in polycrystalline pentacene TFTs. Spectroscopic analyses based on a series of μ-GMI at various photon energies reveal that two distinct effects appear, simultaneously, within the polycrystalline pentacene channel layers: Negative GM signals at 1.85 eV originate from the second-derivative-like GM spectrum which is caused by the effect of charge accumulation, whereas positive GM signals originate from the first-derivative-like GM spectrum caused by the effect of leaked gate fields. Comparisons with polycrystalline morphologies indicate that grain centers are predominated by areas with high leaked gate fields due to the low charge density, whereas grain edges are predominantly high-charge-density areas with a certain spatial extension as associated with the concentrated carrier traps. Consequently, it is reasonably understood that larger grains lead to higher device mobility, but with greater inhomogeneity in charge distribution. These findings provide a clue to understand and improve device characteristics of polycrystalline TFTs.

Negative charge induced degradation of PMOSFETs with BF2-implanted p+-poly gate

International Nuclear Information System (INIS)

Lu, C.Y.; Sung, J.M.

1989-01-01

A new degradation phenomenon on thin gate oxide PMOS-FETs with BF 2 implanted p + -poly gate has been demonstrated and investigated. The cause of this type of degradation is a combination of the boron penetration through the gate oxide and charge trap generation due to the presence of fluorine in the gate oxide and some other processing-induced effects. The negative charge-induced degradation other than enhanced boron diffusion has been studied in detail here. The impact of this process-sensitive p + -poly gate structure on deep submicron CMOS process integration has been discussed. (author)

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

Science.gov (United States)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Avalanche transistor pulser for fast-gated operation of micro-channel plate image-intensifiers

International Nuclear Information System (INIS)

Lundy, A.; Parker, J.R.; Lunsford, J.S.; Martin, A.D.

1977-01-01

Transistors operated in the avalanche mode are employed to generate a 1000 volt 10 to 30 nsec wide pulse with less than 4 nsec rise and fall times. This pulse is resistively attenuated to approximately equal to 270 volts and drives the image intensifier tube which is a load of approximately equal to 200 pf. To reduce stray inductance and capacitance, transistor chips were assembled on a thick-film hybrid substrate. Circuit parameters, operating conditions, and coupling to the microchannel plate image-intensifier (MCPI 2 ) tube are described. To provide dc operating voltages and control of transient voltages on the MCPI 2 tube a resistance-capacitance network has been developed which (a) places the MCPI 2 output phosphor at ground, (b) provides programmable gains in ''f-stop'' steps, and (c) minimizes voltage transients on the MCPI 2 tube

A double-gate double-feedback JFET charge-sensitive preamplifier

International Nuclear Information System (INIS)

Fazzi, A.

1996-01-01

A new charge-sensitive preamplifier (CSP) without a physical resistance in the feedback is presented. The input device has to be a double-gate JFET. In this new preamplifier configuration the feedback capacitor is continuously discharged by means of a second DC current feedback loop closed through the bottom gate of the input JFET. The top gate-channel junction works as usual in reverse bias, the bottom gate-channel is forward biased. A fraction of the current injected by the bottom gate reaches the top gate discharging the feedback capacitor. The n-channel double-gate JFET is considered from the viewpoint of the restoring action as a parasitic p-n-p ''transversal'' bipolar junction transistor. The new preamplifier is also suited for detectors operating at room temperature with leakage current which may vary with time. The DC behaviour and the dynamic behaviour of the circuit is analyzed and new measurements presented. (orig.)

Performance of an X-ray spectroscopic system based on a double-gate double-feedback charge preamplifier

CERN Document Server

Fazzi, A

2000-01-01

The performance of a near room temperature X-ray spectroscopic system is reported. The system is based on a charge preamplifier with the first transistor having two separated gates. The preamplifier operates in a continuous reset mode without any physical resistor connected to the input node. The leakage current and the current due to the rate of X-rays is neutralized by an average current of holes, flowing under the control of an additional feedback, from the bottom to the top gate. The preamplifier is followed by a simple circuit which exactly cancels the long tail of the impulse response of a pure double-gate preamplifier. The compensation of this tail, due to the very principle of the preamplifier's continuous reset through the double-gate mechanism, improves substantially the high-rate performance of the system. The preamplifier based on a commercially available double-gate front JFET MX-40 (MOXTEK) coupled to a silicon drift detector produced at BNL achieved ENC of 13 electrons at -30 deg. C. The analys...

Improved charge-coupled device detectors for high-speed, charge exchange spectroscopy studies on the DIII-D tokamak

International Nuclear Information System (INIS)

Burrell, K.H.; Gohil, P.; Groebner, R.J.; Kaplan, D.H.; Robinson, J.I.; Solomon, W.M.

2004-01-01

Charge exchange spectroscopy is one of the key ion diagnostics on the DIII-D tokamak. It allows determination of ion temperature, poloidal and toroidal velocity, impurity density, and radial electric field E r throughout the plasma. For the 2003 experimental campaign, we replaced the intensified photodiode array detectors on the central portion of the DIII-D charge exchange spectroscopy system with advanced charge-coupled device (CCD) detectors mounted on faster (f/4.7) Czerny-Turner spectrometers equipped with toroidal mirrors. The CCD detectors are improved versions of the ones installed on our edge system in 1999. The combination improved the photoelectron signal level by about a factor of 20 and the signal to noise by a factor of 2-8, depending on the absolute signal level. The new cameras also allow shorter minimum integration times while archiving to PC memory: 0.552 ms for the slower, lower-read noise (15 e) readout mode and 0.274 ms in the faster, higher-read noise (30 e) mode

Equilibrium charge fluctuations of a charge detector and its effect on a nearby quantum dot

Science.gov (United States)

Ruiz-Tijerina, David; Vernek, Edson; Ulloa, Sergio

2014-03-01

We study the Kondo state of a spin-1/2 quantum dot (QD), in close proximity to a quantum point contact (QPC) charge detector near the conductance regime of the 0.7 anomaly. The electrostatic coupling between the QD and QPC introduces a remote gate on the QD level, which varies with the QPC gate voltage. Furthermore, models for the 0.7 anomaly [Y. Meir et al., PRL 89,196802(2002)] suggest that the QPC lodges a Kondo-screened level with charge-correlated hybridization, which may be also affected by capacitive coupling to the QD, giving rise to a competition between the two Kondo ground states. We model the QD-QPC system as two capacitively-coupled Kondo impurities, and explore the zero-bias transport of both the QD and the QPC for different local gate voltages and coupling strengths, using the numerical renormalization group and variational methods. We find that the capacitive coupling produces a remote gating effect, non-monotonic in the gate voltages, which reduces the gate voltage window for Kondo screening in either impurity, and which can also drive a quantum phase transition out of the Kondo regime. Our study is carried out for intermediate coupling strengths, and as such is highly relevant to experiments; particularly, to recent studies of decoherence effects on QDs. Supported by MWN/CIAM and NSF PIRE.

Charge transport properties of graphene: Effects of Cu-based gate electrode

Energy Technology Data Exchange (ETDEWEB)

Tang, Qide [School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105 (China); Zhang, C. X., E-mail: zhangchunxiao@xtu.edu.cn; Tang, Chao, E-mail: tang-chao@xtu.edu.cn; Zhong, Jianxin [School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105 (China); Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China); He, Chaoyu [Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China)

2016-07-21

Using the first-principles nonequilibrium Green's function method, we study effects of Cu and Ni@Cu used as the Cu-based gate electrode on the charge transport of graphene in the field effect transistors (FET). We find that the transmission of graphene decreases with both Cu and Ni@Cu absorbed in the scatter region. Especially, noticeable transmission gaps are present around the Femi level. The transmission gaps are still effective, and considerable cut-off regions are found under the non-equilibrium environment. The Ni@Cu depresses the transmission of graphene more seriously than the Cu and enlarges the transmission gap in armchair direction. The effects on the charge transport are attributed to the redistribution of electronic states of graphene. Both Cu and Ni@Cu induce the localization of states, so as to block the electronic transport. The Ni@Cu transforms the interaction between graphene and gate electrode from the physisorption to the chemisorption, and then induces more localized states, so that the transmission decreases further. Our results suggest that besides being used to impose gate voltage, the Cu-based gate electrode itself will have a considerable effect on the charge transport of graphene and induces noticeable transmission gap in the FET.

Interaction of slow highly-charged ions with metals and insulators

International Nuclear Information System (INIS)

Yamazaki, Y.

2007-01-01

Interaction of slow highly charged ions with insulator as well as metallic surfaces is discussed. In addition to the usual flat surface targets, studies with thin foils having a multitude of straight holes of ∼100 nm in diameter (micro-capillary foil) are introduced, which provide various unique information on the above surface interaction. In the case of an insulator micro-capillary foil, a so-called guiding effect was observed, where slow highly charged ions can transmit through the capillary tunnel keeping their initial charge state even when the capillary axis is tilted against the incident beam. A similar guiding effect has recently been found for slow highly-charged ions transmitted through a single tapered glass capillary. In both cases, the guiding effects are expected to be governed by a self-organized charging and discharging of the inner-wall of the insulator capillary. One of the prominent features of this guiding effect with the tapered capillary is the formation of a nano-size beam, which can be applied in various fields of science including surface nano-modification/analysis, nano-surgery of living cells, etc

Local gate control in carbon nanotube quantum devices

Science.gov (United States)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

Science.gov (United States)

Wadhwa, Girish; Raj, Balwinder

2018-05-01

Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.

Event-driven charge-coupled device design and applications therefor

Science.gov (United States)

Doty, John P. (Inventor); Ricker, Jr., George R. (Inventor); Burke, Barry E. (Inventor); Prigozhin, Gregory Y. (Inventor)

2005-01-01

An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.

Camera memory study for large space telescope. [charge coupled devices

Science.gov (United States)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

Two-qubit gate operations in superconducting circuits with strong coupling and weak anharmonicity

International Nuclear Information System (INIS)

Lü Xinyou; Ashhab, S; Cui Wei; Wu Rebing; Nori, Franco

2012-01-01

We theoretically study the implementation of two-qubit gates in a system of two coupled superconducting qubits. In particular, we analyze two-qubit gate operations under the condition that the coupling strength is comparable with or even larger than the anharmonicity of the qubits. By numerically solving the time-dependent Schrödinger equation under the assumption of negligible decoherence, we obtain the dependence of the two-qubit gate fidelity on the system parameters in the case of both direct and indirect qubit-qubit coupling. Our numerical results can be used to identify the ‘safe’ parameter regime for experimentally implementing two-qubit gates with high fidelity in these systems. (paper)

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Science.gov (United States)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping

International Nuclear Information System (INIS)

Jalilian, Romaneh; Tian Jifa; Chen, Yong P; Jauregui, Luis A; Lopez, Gabriel; Roecker, Caleb; Jovanovic, Igor; Yazdanpanah, Mehdi M; Cohn, Robert W

2011-01-01

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip voltage shows significant variation with tip position, and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. Our measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, graphene edges, structural defects and resist residues. Our scanning gate measurements also demonstrate graphene's excellent capability to sense the local electric field and charges.

Measurements of plasma temperature and electron density in laser

Indian Academy of Sciences (India)

The temperature and electron density characterizing the plasma are measured by time-resolved spectroscopy of neutral atom and ion line emissions in the time window of 300–2000 ns. An echelle spectrograph coupled with a gated intensified charge coupled detector is used to record the plasma emissions.

Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

Science.gov (United States)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

2018-02-01

We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

Four-frame gated optical imager with 120-ps resolution

International Nuclear Information System (INIS)

Young, P.E.; Hares, J.D.; Kilkenny, J.D.; Phillion, D.W.; Campbell, E.M.

1988-04-01

In this paper we describe the operation and applications of a framing camera capable of four separate two-dimensional images with each frame having a 120-ps gate width. Fast gating of a single frame is accomplished by using a wafer image intensifier tube in which the cathode is capacitively coupled to an external electrode placed outside of the photocathode of the tube. This electrode is then pulsed relative to the microchannel plate by a narrow (120 ps), high-voltage pulse. Multiple frames are obtained by using multiple gated tubes which share a single bias supply and pulser with relative gate times selected by the cable lengths between the tubes and the pulser. A beamsplitter system has been constructed which produces a separate image for each tube from a single scene. Applications of the framing camera to inertial confinement fusion experiments are discussed

One- and two-electron processes in collisions between hydrogen molecules and slow highly charged ions

International Nuclear Information System (INIS)

Wells, E.; Carnes, K.D.; Tawara, H.; Ali, R.; Sidky, Emil Y.; Illescas, Clara; Ben-Itzhak, I.

2005-01-01

A coincidence time-of-flight technique coupled with projectile charge state analysis was used to study electron capture in collisions between slow highly charged ions and hydrogen molecules. We found single electron capture with no target excitation to be the dominant process for both C 6+ projectiles at a velocity of 0.8 atomic units and Ar 11+ projectiles at v 0.63 a.u. Double electron capture and transfer excitation, however, were found to be comparable and occur about 30% of the time relative to single capture. Most projectiles (96%) auto-ionize quickly following double capture into doubly excited states. The data are compared to classical and quantum mechanical model calculations

Hydrogen bonds as molecular timers for slow inactivation in voltage-gated potassium channels

DEFF Research Database (Denmark)

Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

2013-01-01

Voltage-gated potassium (Kv) channels enable potassium efflux and membrane repolarization in excitable tissues. Many Kv channels undergo a progressive loss of ion conductance in the presence of a prolonged voltage stimulus, termed slow inactivation, but the atomic determinants that regulate the k...... subunit(s). DOI: http://dx.doi.org/10.7554/eLife.01289.001....

The space charge effects on the slow extraction process

International Nuclear Information System (INIS)

Ohmori, Chihiro.

1992-06-01

The calculation of the slow extraction which includes the space charge effects has been performed for the Compressor/Stretcher Ring (CSR) of the proposed Japanese Hadron Project. We have investigated the slow extraction of 1 GeV proton beam with an average current of 100μA. Calculation shows not only the emittance growth of the extracted beam but also decrease of the extraction efficiency and discontinuity of beam spill. (author)

Voltage-Gated Potassium Channel Antibodies in Slow-Progression Motor Neuron Disease.

Science.gov (United States)

Godani, Massimiliano; Zoccarato, Marco; Beronio, Alessandro; Zuliani, Luigi; Benedetti, Luana; Giometto, Bruno; Del Sette, Massimo; Raggio, Elisa; Baldi, Roberta; Vincent, Angela

2017-01-01

The spectrum of autoimmune neurological diseases associated with voltage-gated potassium channel (VGKC)-complex antibodies (Abs) ranges from peripheral nerve disorders to limbic encephalitis. Recently, low titers of VGKC-complex Abs have also been reported in neurodegenerative disorders, but their clinical relevance is unknown. The aim of the study was to explore the prevalence of VGKC-complex Abs in slow-progression motor neuron disease (MND). We compared 11 patients affected by slow-progression MND with 9 patients presenting typical progression illness. Sera were tested for VGKC-complex Abs by radioimmunoassay. The distribution of VGKC-complex Abs was analyzed with the Mann-Whitney U test. The statistical analysis showed a significant difference between the mean values in the study and control groups. A case with long-survival MND harboring VGKC-complex Abs and treated with intravenous immunoglobulins is described. Although VGKC-complex Abs are not likely to be pathogenic, these results could reflect the coexistence of an immunological activation in patients with slow disease progression. © 2016 S. Karger AG, Basel.

Generation of high-fidelity controlled-NOT logic gates by coupled superconducting qubits

International Nuclear Information System (INIS)

Galiautdinov, Andrei

2007-01-01

Building on the previous results of the Weyl chamber steering method, we demonstrate how to generate high-fidelity controlled-NOT (CNOT) gates by direct application of certain physically relevant Hamiltonians with fixed coupling constants containing Rabi terms. Such Hamiltonians are often used to describe two superconducting qubits driven by local rf pulses. It is found that in order to achieve 100% fidelity in a system with capacitive coupling of strength g, one Rabi term suffices. We give the exact values of the physical parameters needed to implement such CNOT gates. The gate time and all possible Rabi frequencies are found to be t=π/(2g) and Ω 1 /g=√(64n 2 -1),n=1,2,3,.... Generation of a perfect CNOT gate in a system with inductive coupling, characterized by additional constant k, requires the presence of both Rabi terms. The gate time is again t=π/(2g), but now there is an infinite number of solutions, each of which is valid in a certain range of k and is characterized by a pair of integers (n,m), (Ω 1,2 /g)=√(16n 2 -((k-1/2)) 2 )±√(16m 2 -((k+1/2)) 2 ). We distinguish two cases, depending on the sign of the coupling constant: (i) the antiferromagnetic case (k≥0) with n≥m=0,1,2,... and (ii) the ferromagnetic case (k≤0) with n>m=0,1,2,.... We conclude with consideration of fidelity degradation by switching to resonance. Simulation of time evolution based on the fourth-order Magnus expansion reveals characteristics of the gate similar to those found in the exact case, with slightly shorter gate time and shifted values of the Rabi frequencies

Frame-Transfer Gating Raman Spectroscopy for Time-Resolved Multiscalar Combustion Diagnostics

Science.gov (United States)

Nguyen, Quang-Viet; Fischer, David G.; Kojima, Jun

2011-01-01

Accurate experimental measurement of spatially and temporally resolved variations in chemical composition (species concentrations) and temperature in turbulent flames is vital for characterizing the complex phenomena occurring in most practical combustion systems. These diagnostic measurements are called multiscalar because they are capable of acquiring multiple scalar quantities simultaneously. Multiscalar diagnostics also play a critical role in the area of computational code validation. In order to improve the design of combustion devices, computational codes for modeling turbulent combustion are often used to speed up and optimize the development process. The experimental validation of these codes is a critical step in accepting their predictions for engine performance in the absence of cost-prohibitive testing. One of the most critical aspects of setting up a time-resolved stimulated Raman scattering (SRS) diagnostic system is the temporal optical gating scheme. A short optical gate is necessary in order for weak SRS signals to be detected with a good signal- to-noise ratio (SNR) in the presence of strong background optical emissions. This time-synchronized optical gating is a classical problem even to other spectroscopic techniques such as laser-induced fluorescence (LIF) or laser-induced breakdown spectroscopy (LIBS). Traditionally, experimenters have had basically two options for gating: (1) an electronic means of gating using an image intensifier before the charge-coupled-device (CCD), or (2) a mechanical optical shutter (a rotary chopper/mechanical shutter combination). A new diagnostic technology has been developed at the NASA Glenn Research Center that utilizes a frame-transfer CCD sensor, in conjunction with a pulsed laser and multiplex optical fiber collection, to realize time-resolved Raman spectroscopy of turbulent flames that is free from optical background noise (interference). The technology permits not only shorter temporal optical gating (down

Charge exchange in slow collisions of multiply charged ions with atoms

International Nuclear Information System (INIS)

Presnyakov, L.P.; Uskov, D.B.; Janev, R.K.

1982-01-01

Single-electron charge exchange between ions having a charge Z>6 and atoms is considered at relative velocities v< Z/sup 1/2/. An analytic method is developed for the solution of a multilevel problem that is a generalization of the decay model and of the approximation of nonadiabatic coupling between two states. Expressions are obtained for the reaction-product distributions in the principal and angular quantum numbers. The calculated total cross sections agree well with the experimental data on charge exchange of hydrogen atoms and molecules with nuclei. The theory describes the oscillations of the total cross section against the background of a monotonic growth as the charge is increased

The cooperative voltage sensor motion that gates a potassium channel.

Science.gov (United States)

Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

2005-01-01

The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

Quantum Gate Operations in Decoherence-Free Subspace with Superconducting Charge Qubits inside a Cavity

International Nuclear Information System (INIS)

Yi-Min, Wang; Yan-Li, Zhou; Lin-Mei, Liang; Cheng-Zu, Li

2009-01-01

We propose a feasible scheme to achieve universal quantum gate operations in decoherence-free subspace with superconducting charge qubits placed in a microwave cavity. Single-logic-qubit gates can be realized with cavity assisted interaction, which possesses the advantages of unconventional geometric gate operation. The two-logic-qubit controlled-phase gate between subsystems can be constructed with the help of a variable electrostatic transformer. The collective decoherence can be successfully avoided in our well-designed system. Moreover, GHZ state for logical qubits can also be easily produced in this system

Research on range-gated laser active imaging seeker

Science.gov (United States)

You, Mu; Wang, PengHui; Tan, DongJie

2013-09-01

Compared with other imaging methods such as millimeter wave imaging, infrared imaging and visible light imaging, laser imaging provides both a 2-D array of reflected intensity data as well as 2-D array of range data, which is the most important data for use in autonomous target acquisition .In terms of application, it can be widely used in military fields such as radar, guidance and fuse. In this paper, we present a laser active imaging seeker system based on range-gated laser transmitter and sensor technology .The seeker system presented here consist of two important part, one is laser image system, which uses a negative lens to diverge the light from a pulse laser to flood illuminate a target, return light is collected by a camera lens, each laser pulse triggers the camera delay and shutter. The other is stabilization gimbals, which is designed to be a rotatable structure both in azimuth and elevation angles. The laser image system consists of transmitter and receiver. The transmitter is based on diode pumped solid-state lasers that are passively Q-switched at 532nm wavelength. A visible wavelength was chosen because the receiver uses a Gen III image intensifier tube with a spectral sensitivity limited to wavelengths less than 900nm.The receiver is image intensifier tube's micro channel plate coupled into high sensitivity charge coupled device camera. The image has been taken at range over one kilometer and can be taken at much longer range in better weather. Image frame frequency can be changed according to requirement of guidance with modifiable range gate, The instantaneous field of views of the system was found to be 2×2 deg. Since completion of system integration, the seeker system has gone through a series of tests both in the lab and in the outdoor field. Two different kinds of buildings have been chosen as target, which is located at range from 200m up to 1000m.To simulate dynamic process of range change between missile and target, the seeker system has

Ponderomotive force effects on slow-wave coupling

International Nuclear Information System (INIS)

Wilson, J.R.; Wong, K.L.

1982-01-01

Localized plasma density depressions are observed to form near a multi-ring slow-wave structure when the value of the nonlinearity parameter, s = ω 2 /sub p/eVertical BarE/sub z/Vertical Bar 2 /8πω 2 nkappaT, is of order unity. Consequent changes in the wave propagation and coupling efficiency are reported. For large enough values of s, the coupling efficiency may be reduced by 50% from the linear value

Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

Directory of Open Access Journals (Sweden)

A. Stockklauser

2017-03-01

Full Text Available The strong coupling limit of cavity quantum electrodynamics (QED implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2π=238  MHz at a resonator linewidth κ/2π=12  MHz and a DQD charge qubit decoherence rate of γ_{2}/2π=40  MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.

An abnormally slow proton transfer reaction in a simple HBO derivative due to ultrafast intramolecular-charge transfer events.

Science.gov (United States)

Alarcos, Noemí; Gutierrez, Mario; Liras, Marta; Sánchez, Félix; Douhal, Abderrazzak

2015-07-07

We report on the steady-state, picosecond and femtosecond time-resolved studies of a charge and proton transfer dye 6-amino-2-(2'-hydroxyphenyl)benzoxazole (6A-HBO) and its methylated derivative 6-amino-2-(2'-methoxyphenyl)benzoxazole (6A-MBO), in different solvents. With femtosecond resolution and comparison with the photobehaviour of 6A-MBO, we demonstrate for 6A-HBO in solution, the photoproduction of an intramolecular charge-transfer (ICT) process at S1 taking place in ∼140 fs or shorter, followed by solvent relaxation in the charge transferred species. The generated structure (syn-enol charge transfer conformer) experiences an excited-state intramolecular proton-transfer (ESIPT) reaction to produce a keto-type tautomer. This subsequent proton motion occurs in 1.2 ps (n-heptane), 14 ps (DCM) and 35 ps (MeOH). In MeOH, it is assisted by the solvent molecules and occurs through tunneling for which we got a large kinetic isotope effect (KIE) of about 13. For the 6A-DBO (deuterated sample in CD3OD) the global proton-transfer reaction takes place in 200 ps, showing a remarkable slow KIE regime. The slow ESIPT reaction in DCM (14 ps), not through tunnelling as it is not sensitive to OH/OD exchange, has however to overcome an energy barrier using intramolecular as well as solvent coordinates. The rich ESIPT dynamics of 6A-HBO in the used solutions is governed by an ICT reaction, triggered by the amino group, and it is solvent dependent. Thus, the charge injection to a 6A-HBO molecular frame makes the ICT species more stable, and the phenol group less acidic, slowing down the subsequent ESIPT reaction. Our findings bring new insights into the coupling between ICT and ESIPT reactions on the potential-energy surfaces of several barriers.

Scaling the Serialization of MOSFETs by Magnetically Coupling Their Gate Electrodes

DEFF Research Database (Denmark)

Dimopoulos, Emmanouil; Munk-Nielsen, Stig

2013-01-01

More than twenty years of thorough research on the serialization of power semiconductor switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), have resulted into several different stacking concepts; all aiming towards...... the establishment of a high-efficient, high-voltage, fast-switching device. Among the prevailing stacking approaches lies the gate balancing core technique, which, in its initial form, demonstrated very good performance in strings of high-power IGBT modules, by magnetically coupling their gate electrodes. Recently...

Generation of an N-qubit phase gate via atom—cavity nonidentical coupling

International Nuclear Information System (INIS)

Ying-Qiao, Zhang; Shou, Zhang

2009-01-01

A scheme for approximate generation of an N-qubit phase gate is proposed in cavity QED based on nonidentical coupling between the atoms and the cavity. The atoms interact with a highly detuned cavity-field mode, but quantum information does not transfer between the atoms and cavity field, and thus the cavity decay is negligible. The gate time does not rise with an increase in the number of qubits. With the choice of a smaller odd number l (related to atom–cavity coupling constants), the phase gate can be generated with a higher fidelity and a higher success probability in a shorter time (the gate time is much shorter than the atomic radiative lifetime and photon lifetime). When the number of qubits N exceeds certain small values, the fidelity and success probability rise slowly with an increase in the number of qubits N. When N → ∞, the fidelity and success probability infinitely approach 1, but never exceed 1. (general)

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

International Nuclear Information System (INIS)

Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

2004-01-01

NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

Charge dependence of the pion-nucleon coupling constant

Directory of Open Access Journals (Sweden)

V. A. Babenko

2015-07-01

Full Text Available On the basis of the Yukawa potential we study the pion-nucleon coupling constants for the neutral and charged pions assuming that nuclear forces at low energies are mainly determined by the exchange of virtual pions. We obtain the charged pseudovector pion-nucleon coupling constant f2π± = 0.0804(7 by making the use of experimental low-energy scattering parameters for the singlet pp- and np-scattering, and also by use of the neutral pseudovector pion-nucleon coupling constant f2π0 = 0.0749(7. Corresponding value of the charged pseudoscalar pion-nucleon coupling constant g2π0 / 4π = 14.55(13 is also determined. This calculated value of the charged pseudoscalar pion-nucleon coupling constant is in fully agreement with the experimental constant g2π0 / 4π = 14.52(26 obtained by the Uppsala Neutron Research Group. Our results show considerable charge splitting of the pion-nucleon coupling constant.

A gate-induced switch in zigzag graphene nanoribbons and charging effects

International Nuclear Information System (INIS)

Cheraghchi, Hosein; Esmailzade, Hanyieh

2010-01-01

Using the non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with an even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with an on/off ratio ∼ 10 6 for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transport between discontinuous energy bands. Since the external field is well screened close to the contacts, the NDR is robust against the electrostatic potential. However, for voltages higher than the NDR threshold, due to charge transfer through the edges of the zigzag GNR (ZGNR), screening is reduced such that the external potential can penetrate inside the ribbon giving rise to smaller values of off-current. Furthermore, the on/off ratio of the current depends on the aspect ratio of the length/width and also edge impurity. Moreover, the on/off ratio displays a power law behavior as a function of ribbon length.

All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

NARCIS (Netherlands)

Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

2008-01-01

Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

Science.gov (United States)

Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

2015-12-03

Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

Nonlinear charge reduction effect in strongly coupled plasmas

International Nuclear Information System (INIS)

Sarmah, D; Tessarotto, M; Salimullah, M

2006-01-01

The charge reduction effect, produced by the nonlinear Debye screening of high-Z charges occurring in strongly coupled plasmas, is investigated. An analytic asymptotic expression is obtained for the charge reduction factor (f c ) which determines the Debye-Hueckel potential generated by a charged test particle. Its relevant parametric dependencies are analysed and shown to predict a strong charge reduction effect in strongly coupled plasmas

Rendering high charge density of states in ionic liquid-gated MoS 2 transistors

NARCIS (Netherlands)

Lee, Y.; Lee, J.; Kim, S.; Park, H.S.

2014-01-01

We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high

Breaking the hydrophobicity of the MscL pore: insights into a charge-induced gating mechanism.

Directory of Open Access Journals (Sweden)

Balasubramanian Chandramouli

Full Text Available The mechanosensitive channel of large conductance (MscL is a protein that responds to membrane tension by opening a transient pore during osmotic downshock. Due to its large pore size and functional reconstitution into lipid membranes, MscL has been proposed as a promising artificial nanovalve suitable for biotechnological applications. For example, site-specific mutations and tailored chemical modifications have shown how MscL channel gating can be triggered in the absence of tension by introducing charged residues at the hydrophobic pore level. Recently, engineered MscL proteins responsive to stimuli like pH or light have been reported. Inspired by experiments, we present a thorough computational study aiming at describing, with atomistic detail, the artificial gating mechanism and the molecular transport properties of a light-actuated bacterial MscL channel, in which a charge-induced gating mechanism has been enabled through the selective cleavage of photo-sensitive alkylating agents. Properties such as structural transitions, pore dimension, ion flux and selectivity have been carefully analyzed. Besides, the effects of charge on alternative sites of the channel with respect to those already reported have been addressed. Overall, our results provide useful molecular insights into the structural events accompanying the engineered MscL channel gating and the interplay of electrostatic effects, channel opening and permeation properties. In addition, we describe how the experimentally observed ionic current in a single-subunit charged MscL mutant is obtained through a hydrophobicity breaking mechanism involving an asymmetric inter-subunit motion.

Isolation Mounting for Charge-Coupled Devices

Science.gov (United States)

Goss, W. C.; Salomon, P. M.

1985-01-01

CCD's suspended by wires under tension. Remote thermoelectric cooling of charge coupled device allows vibration isolating mounting of CCD assembly alone, without having to suspend entire mass and bulk of thermoelectric module. Mounting hardware simple and light. Developed for charge-coupled devices (CCD's) in infrared telescope support adaptable to sensors in variety of environments, e.g., sensors in nuclear reactors, engine exhausts and plasma chambers.

The electrically silent Kv6.4 subunit confers hyperpolarized gating charge movement in Kv2.1/Kv6.4 heterotetrameric channels.

Directory of Open Access Journals (Sweden)

Elke Bocksteins

Full Text Available The voltage-gated K(+ (Kv channel subunit Kv6.4 does not form functional homotetrameric channels but co-assembles with Kv2.1 to form functional Kv2.1/Kv6.4 heterotetrameric channels. Compared to Kv2.1 homotetramers, Kv6.4 exerts a ~40 mV hyperpolarizing shift in the voltage-dependence of Kv2.1/Kv6.4 channel inactivation, without a significant effect on activation gating. However, the underlying mechanism of this Kv6.4-induced modulation of Kv2.1 channel inactivation, and whether the Kv6.4 subunit participates in the voltage-dependent gating of heterotetrameric channels is not well understood. Here we report distinct gating charge movement of Kv2.1/Kv6.4 heterotetrameric channels, compared to Kv2.1 homotetramers, as revealed by gating current recordings from mammalian cells expressing these channels. The gating charge movement of Kv2.1/Kv6.4 heterotetrameric channels displayed an extra component around the physiological K(+ equilibrium potential, characterized by a second sigmoidal relationship of the voltage-dependence of gating charge movement. This distinct gating charge displacement reflects movement of the Kv6.4 voltage-sensing domain and has a voltage-dependency that matches the hyperpolarizing shift in Kv2.1/Kv6.4 channel inactivation. These results provide a mechanistic basis for the modulation of Kv2.1 channel inactivation gating kinetics by silent Kv6.4 subunits.

Barrier versus tilt exchange gate operations in spin-based quantum computing

Science.gov (United States)

Shim, Yun-Pil; Tahan, Charles

2018-04-01

We present a theory for understanding the exchange interaction between electron spins in neighboring quantum dots, either by changing the detuning of the two quantum dots or independently tuning the tunneling barrier between quantum dots. The Hubbard model and a more realistic confining-potential model are used to investigate how the tilting and barrier control affect the effective exchange coupling and thus the gate fidelity in both the detuning and symmetric regimes. We show that the exchange coupling is less sensitive to the charge noise through tunnel barrier control (while allowing for exchange coupling operations on a sweet spot where the exchange interaction has zero derivative with respect to the detuning). Both GaAs and Si quantum dots are considered, and we compare our results with experimental data showing qualitative agreements. Our results answer the open question of why barrier gates are preferable to tilt gates for exchange-based gate operations.

The self-force on a non-minimally coupled static scalar charge outside a Schwarzschild black hole

International Nuclear Information System (INIS)

Cho, Demian H J; Tsokaros, Antonios A; Wiseman, Alan G

2007-01-01

The finite part of the self-force on a static, non-minimally coupled scalar test charge outside a Schwarzschild black hole is zero. This result is determined from the work required to slowly raise or lower the charge through an infinitesimal distance. Unlike similar force calculations for minimally-coupled scalar charges or electric charges, we find that we must account for a flux of field energy that passes through the horizon and changes the mass and area of the black hole when the charge is displaced. This occurs even for an arbitrarily slow displacement of the non-minimally coupled scalar charge. For a positive coupling constant, the area of the hole increases when the charge is lowered and decreases when the charge is raised. The fact that the self-force vanishes for a static, non-minimally coupled scalar charge in Schwarzschild spacetime agrees with a simple prediction of the Quinn-Wald axioms. However, Zel'nikov and Frolov computed a non-vanishing self-force for a non-minimally coupled charge. Our method of calculation closely parallels the derivation of Zel'nikov and Frolov, and we show that their omission of this unusual flux is responsible for their (incorrect) result. When the flux is accounted for, the self-force vanishes. This correction eliminates a potential counter example to the Quinn-Wald axioms. The fact that the area of the black hole changes when the charge is displaced brings up two interesting questions that did not arise in similar calculations for static electric charges and minimally coupled scalar charges. (1) How can we reconcile a decrease in the area of the black hole horizon with the area theorem which concludes that δArea horizon ≥ 0? The key hypothesis of the area theorem is that the stress-energy tensor must satisfy a null-energy condition T αβ l α l β ≥ 0 for any null vector l α . We explicitly show that the stress-energy associated with a non-minimally coupled field does not satisfy this condition, and this violation of

Nano-sized surface modifications induced by the impact of slow highly charged ions - A first review

International Nuclear Information System (INIS)

Aumayr, F.; El-Said, A.S.; Meissl, W.

2008-01-01

Irradiation of crystalline solid targets with swift heavy ions can lead to the formation of latent tracks in the solid and the creation of (mostly-hillock type) nanostructures on the surface. Recently similar surface modifications with nanometer dimensions have been demonstrated for the impact of individual, very slow but highly charged ions on various surfaces. We will review the current state of this new field of research. In particular we will discuss the circumstances and conditions under which nano-sized features (hillocks or craters) on different surfaces due to impact of slow highly charged ions can be produced. The use of slow highly charged ions instead of swift heavy ions might be of considerable interest for some practical applications

A fast charge coupled device detector for charge exchange recombination spectroscopy on the DIII-D Tokamak

International Nuclear Information System (INIS)

Thomas, D.M.; Burrell, K.H.; Groebner, R.J.; Gohil, P.; Kaplan, D.; Makariou, C.; Seraydarian, R.P.

1997-01-01

Charge exchange recombination (CER) spectroscopy has become a standard diagnostic for Tokamaks. CER measurements have been used to determine spatially and temporally resolved ion temperature, toroidal and poloidal ion rotation speed, impurity density, and radial electric field. Knowledge of the spatial profile and temporal evolution of the electric field shear in the plasma edge is crucial to understanding the physics of the L to H transition. High speed CER measurements are also valuable for edge localized mode studies. Since the 0.52 ms minimum time resolution of our present system is barely adequate to study the time evolution of these phenomena, we have developed a new charge coupled device (CCD) detector system with about a factor of 2 better time resolution. In addition, our existing system detects sufficient photons to utilize the shortest time resolution only under exceptional conditions. The new CCD detector has a quantum efficiency of about 0.65, which is a factor of 7 better than our previous image intensifier-silicon photodiode detector systems. We have also equipped the new system with spectrometers of lower f/number. This combination should allow more routine operation at the minimum integration time, as well as improving data quality for measurements in the divertor-relevant region outside of the separatrix. Construction details, benchmark data, and initial Tokamak measurements for the new system will be presented. copyright 1997 American Institute of Physics

State-selective charge exchange in slow collisions of Si3+ ions with H atoms: A molecular state close coupling treatment

International Nuclear Information System (INIS)

Joseph, Dwayne C; Saha, Bidhan C

2012-01-01

Charge transfer cross sections are calculated by employing both the quantal and semiclassical ε(R) molecular orbital close coupling (MOCC) approximations in the adiabatic representation and compared with other theoretical and experimental results

State-selective charge exchange in slow collisions of Si3+ ions with H atoms: A molecular state close coupling treatment*)

Science.gov (United States)

Joseph, Dwayne C.; Saha, Bidhan C.

2012-11-01

Charge transfer cross sections are calculated by employing both the quantal and semiclassical ɛ(R) molecular orbital close coupling (MOCC) approximations in the adiabatic representation and compared with other theoretical and experimental results

The S4-S5 linker acts as a signal integrator for HERG K+ channel activation and deactivation gating.

Directory of Open Access Journals (Sweden)

Chai Ann Ng

Full Text Available Human ether-à-go-go-related gene (hERG K(+ channels have unusual gating kinetics. Characterised by slow activation/deactivation but rapid inactivation/recovery from inactivation, the unique gating kinetics underlie the central role hERG channels play in cardiac repolarisation. The slow activation and deactivation kinetics are regulated in part by the S4-S5 linker, which couples movement of the voltage sensor domain to opening of the activation gate at the distal end of the inner helix of the pore domain. It has also been suggested that cytosolic domains may interact with the S4-S5 linker to regulate activation and deactivation kinetics. Here, we show that the solution structure of a peptide corresponding to the S4-S5 linker of hERG contains an amphipathic helix. The effects of mutations at the majority of residues in the S4-S5 linker of hERG were consistent with the previously identified role in coupling voltage sensor movement to the activation gate. However, mutations to Ser543, Tyr545, Gly546 and Ala548 had more complex phenotypes indicating that these residues are involved in additional interactions. We propose a model in which the S4-S5 linker, in addition to coupling VSD movement to the activation gate, also contributes to interactions that stabilise the closed state and a separate set of interactions that stabilise the open state. The S4-S5 linker therefore acts as a signal integrator and plays a crucial role in the slow deactivation kinetics of the channel.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

Science.gov (United States)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

Science.gov (United States)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

Compensating strong coupling with large charge

CERN Document Server

Alvarez-Gaume, Luis; Orlando, Domenico; Reffert, Susanne

2017-04-11

We study (conformal) field theories with global symmetries in the sector where the value of the global charge $Q$ is large. We find (as expected) that the low energy excitations of this sector are described by the general form of Goldstone's theorem in the non-relativistic regime. We also derive the unexpected result, first presented in [Hellerman:2015], that the effective field theory describing such sector of fixed $Q$ contains effective couplings $\\lambda_{\\text{eff}}\\sim \\lambda^b /Q^{a}$, where $\\lambda$ is the original coupling. Hence, large charge leads to weak coupling. In the last section of the paper we present an outline of how to compute anomalous dimensions in this limit.

Feedback-tuned, noise resilient gates for encoded spin qubits

Science.gov (United States)

Bluhm, Hendrik

Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

Strong charge state dependence of H+ and H2+ sputtering induced by slow highly charged ions

International Nuclear Information System (INIS)

Kakutani, N.; Azuma, T.; Yamazaki, Y.; Komaki, K.; Kuroki, K.

1995-01-01

Secondary ion emission has been studied for very slow ( similar 0.01ν B ) highly charged Ar and N ions bombarding C 60 containing hydrogen as an impurity. It is found that the fragmentations of C 60 are very rare even for Ar 16+ bombardments. On the other hand, the sputtering of H + and H 2 + has been observed to increase drastically as a function of incident charge q like q γ (e.g., γ similar 4.6 for H + sputtering by 500 eV Ar q+ ). (orig.)

A novel optical gating method for laser gated imaging

Science.gov (United States)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

Flying spin-qubit gates implemented through Dresselhaus and Rashba spin-orbit couplings

International Nuclear Information System (INIS)

Gong, S.J.; Yang, Z.Q.

2007-01-01

A theoretical scheme is proposed to implement flying spin-qubit gates based on two semiconductor wires with Dresselhaus and Rashba spin-orbit couplings (SOCs), respectively. It is found that under the manipulation of the Dresselhaus/Rashba SOC, spin rotates around x/y axis in the three-dimensional spin space. By combining the two kinds of manipulations, i.e. connecting the two kinds of semiconductor wires in series, we obtain a universal set of losses flying single-qubit gates including Hadamard, phase, and π/8 gates. A ballistic switching effect of electronic flow is also found in the investigation. Our results may be useful in future spin or nanoscale electronics

cAMP control of HCN2 channel Mg2+ block reveals loose coupling between the cyclic nucleotide-gating ring and the pore.

Directory of Open Access Journals (Sweden)

Alex K Lyashchenko

Full Text Available Hyperpolarization-activated cyclic nucleotide-regulated HCN channels underlie the Na+-K+ permeable IH pacemaker current. As with other voltage-gated members of the 6-transmembrane KV channel superfamily, opening of HCN channels involves dilation of a helical bundle formed by the intracellular ends of S6 albeit this is promoted by inward, not outward, displacement of S4. Direct agonist binding to a ring of cyclic nucleotide-binding sites, one of which lies immediately distal to each S6 helix, imparts cAMP sensitivity to HCN channel opening. At depolarized potentials, HCN channels are further modulated by intracellular Mg2+ which blocks the open channel pore and blunts the inhibitory effect of outward K+ flux. Here, we show that cAMP binding to the gating ring enhances not only channel opening but also the kinetics of Mg2+ block. A combination of experimental and simulation studies demonstrates that agonist acceleration of block is mediated via acceleration of the blocking reaction itself rather than as a secondary consequence of the cAMP enhancement of channel opening. These results suggest that the activation status of the gating ring and the open state of the pore are not coupled in an obligate manner (as required by the often invoked Monod-Wyman-Changeux allosteric model but couple more loosely (as envisioned in a modular model of protein activation. Importantly, the emergence of second messenger sensitivity of open channel rectification suggests that loose coupling may have an unexpected consequence: it may endow these erstwhile "slow" channels with an ability to exert voltage and ligand-modulated control over cellular excitability on the fastest of physiologically relevant time scales.

Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

OpenAIRE

Brown, A.R.; Asenov, A.; Watling, J.R.

2002-01-01

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulation...

Extended charged events and Chern-Simons couplings

International Nuclear Information System (INIS)

Bunster, Claudio; Gomberoff, Andres; Henneaux, Marc

2011-01-01

In three spacetime dimensions, the world volume of a magnetic source is a single point, a magnetically charged event. It has been shown long ago that in three-dimensional spacetime, the Chern-Simons coupling is quantized, because the magnetic event emits an electric charge which must be quantized according to the standard Dirac rule. Recently, the concept of dynamical extended charged events has been introduced, and it has been argued that they should play as central a role as that played by particles or ordinary branes. In this article, we show that in the presence of a Chern-Simons coupling, a magnetically charged extended event emits an extended object, which geometrically is just like a Dirac string, but it is observable, obeys equations of motion, and may be electrically charged. We write a complete action principle which accounts for this effect. The action involves two Chern-Simons terms, one integrated over spacetime and the other integrated over the world volume of the submanifold that is the union of the Dirac world sheet and the history of the emitted physical object. By demanding that the total charge emitted by a composite extended magnetic event be quantized according to Dirac's rule, we find a quantization condition for the Chern-Simons coupling. For a 1-form electric potential in D=2n+1 spacetime dimensions, the composite event is formed by n elementary extended magnetic events separated in time such that the product of their transverse spaces, together with the time axis, is the entire spacetime. We show that the emitted electric charge is given by the integral of the (n-1)-th exterior power of the electromagnetic field strength over the last elementary event, or, equivalently, over an appropriate closed surface. The extension to more general p-form potentials and higher dimensions is also discussed. For the case D=11, p=3, our result for the quantization of the Chern-Simons coupling was obtained previously in the context of M theory, an agreement

Compensating strong coupling with large charge

Energy Technology Data Exchange (ETDEWEB)

Alvarez-Gaume, Luis [Theory Department - CERN,CH-1211 Geneva 23 (Switzerland); Simons Center for Geometry and Physics, State University of New York,Stony Brook, NY-11794-3636 (United States); Loukas, Orestis; Orlando, Domenico; Reffert, Susanne [Albert Einstein Center for Fundamental Physics,Institute for Theoretical Physics, University of Bern,Sidlerstrasse 5, CH-3012 Bern (Switzerland)

2017-04-11

We study some (conformal) field theories with global symmetries in the sector where the value of the global charge Q is large. We find (as expected) that the low energy excitations of this sector are described by the general form of Goldstone’s theorem in the non-relativistic regime. We also derive the unexpected result, first presented in https://www.doi.org/10.1007/JHEP12(2015)071, that the effective field theory describing such sector of fixed Q contains effective couplings λ{sub eff}∼λ{sup b}/Q{sup a}, where λ is the original coupling. Hence, large charge leads to weak coupling. In the last section of the paper we present an outline of how to compute anomalous dimensions of the O(n) model in this limit.

X-ray topography with scintillators coupled to image intensifiers or camera tubes

International Nuclear Information System (INIS)

Beauvais, Yves; Mathiot, Alain.

1978-01-01

The possibility of imaging topographic figures in real time by using a thin scintillator coupled to either a high-gain image intensifier or a camera tube is investigated. The camera tube must have a high gain because of the low photon fluxes that are encountered in practice, and because of the relatively low quantum yield of thin phosphors. With conventional X-ray generators, the resolution is photon-noise limited. With more powerful generators like synchrotrons, real-time imaging appears possible, and the resolution is limited by the modulation transfer function of the image tube. Higher resolution can be reached by increasing the magnification between the screen and the image tube. When doing so, the input field is reduced and thinner phosphor screens must be used, resulting in a lower yield. Each time the magnification is doubled, the minimum required photon flux is multiplier by about 8, so that the advantages of increasing the magnification are rapidly limited, so far as real-time imaging is concerned. Because image tube resolution is mainly limited by the modulation transfer function of the phosphor for image intensifiers, and by that of the target for camera tubes, improvement of photocathode resolution can be obtained by magnifying electron optics. A zooming electron optic would permit the field and the resolution of the tube to be adapted to the observed subject. Unfortunately such tubes do not exist at present for this type of application, and in the required size

Studies of collision mechanisms in electron capture by slow multiply charged ions

International Nuclear Information System (INIS)

Gilbody, H B; McCullough, R W

2004-01-01

We review measurements based on translational energy spectroscopy which are being used to identify and assess the relative importance of the various collision mechanisms involved in one-electron capture by slow multiply charged ions in collisions with simple atoms and molecules

Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

Science.gov (United States)

Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

2017-01-01

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

Science.gov (United States)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions.

Science.gov (United States)

Aumayr, Friedrich; Facsko, Stefan; El-Said, Ayman S; Trautmann, Christina; Schleberger, Marika

2011-10-05

This topical review focuses on recent advances in the understanding of the formation of surface nanostructures, an intriguing phenomenon in ion-surface interaction due to the impact of individual ions. In many solid targets, swift heavy ions produce narrow cylindrical tracks accompanied by the formation of a surface nanostructure. More recently, a similar nanometric surface effect has been revealed for the impact of individual, very slow but highly charged ions. While swift ions transfer their large kinetic energy to the target via ionization and electronic excitation processes (electronic stopping), slow highly charged ions produce surface structures due to potential energy deposited at the top surface layers. Despite the differences in primary excitation, the similarity between the nanostructures is striking and strongly points to a common mechanism related to the energy transfer from the electronic to the lattice system of the target. A comparison of surface structures induced by swift heavy ions and slow highly charged ions provides a valuable insight to better understand the formation mechanisms. © 2011 IOP Publishing Ltd

Optimizing low-light microscopy with back-illuminated electron multiplying charge-coupled device: enhanced sensitivity, speed, and resolution.

Science.gov (United States)

Coates, Colin G; Denvir, Donal J; McHale, Noel G; Thornbury, Keith D; Hollywood, Mark A

2004-01-01

The back-illuminated electron multiplying charge-coupled device (EMCCD) camera is having a profound influence on the field of low-light dynamic cellular microscopy, combining highest possible photon collection efficiency with the ability to virtually eliminate the readout noise detection limit. We report here the use of this camera, in 512 x 512 frame-transfer chip format at 10-MHz pixel readout speed, in optimizing a demanding ultra-low-light intracellular calcium flux microscopy setup. The arrangement employed includes a spinning confocal Nipkow disk, which, while facilitating the need to both generate images at very rapid frame rates and minimize background photons, yields very weak signals. The challenge for the camera lies not just in detecting as many of these scarce photons as possible, but also in operating at a frame rate that meets the temporal resolution requirements of many low-light microscopy approaches, a particular demand of smooth muscle calcium flux microscopy. Results presented illustrate both the significant sensitivity improvement offered by this technology over the previous standard in ultra-low-light CCD detection, the GenIII+intensified charge-coupled device (ICCD), and also portray the advanced temporal and spatial resolution capabilities of the EMCCD. Copyright 2004 Society of Photo-Optical Instrumentation Engineers.

Gamma activity coupled to alpha phase as a mechanism for top-down controlled gating

NARCIS (Netherlands)

Bonnefond, M.; Jensen, O.

2015-01-01

Coupling between neural oscillations in different frequency bands has been proposed to coordinate neural processing. In particular, gamma power coupled to alpha phase is proposed to reflect gating of information in the visual system but the existence of such a mechanism remains untested. Here, we

Simple ways of n-γ discrimination using charge comparison technique

International Nuclear Information System (INIS)

Jhingan, Akhil; Singh, Hardev; Singh, R.P.; Golda, K.S.; Sugathan, P.; Mandal, S.; Bhowmik, R.K.

2008-01-01

The charge comparison method for n-γ discrimination has been in practice for more than two decades; technically it can be implemented in variety of ways. We present explicitly, in detail, two simple ways of implementing this technique. The first one is the conventional way of comparing the fractional or slow charge in the tail with the full charge of photomultiplier tubes (PMTs) anode pulse fed to a charge integrating ADC or QDC, but has been electronically implemented in a new fashion. The second one is a novel technique of comparing shaped-dynode pulse, fed to a peak-sensing ADC, with the fractional slow charge integrated in QDC. This technique reduces the complexity of individual gate generation, and thus reduces the number of gate and delay generators, compared with the first case. To implement these techniques, we have designed and fabricated a six-channel, single-width NIM module for use with QDC for n-γ discrimination. The module fabrication is very simple and inexpensive, and can be easily integrated with commercially available high-density NIM and CAMAC modules in experimental setups involving a large number of neutron detectors. Commercially available passive analog delay line chips have been used for delaying analog signals fed to the QDC. To simplify the setup for high-density applications we have replaced the constant fraction discriminator (CFD) by a fast leading-edge discriminator. The quality of n-γ discrimination obtained is comparable with that reported earlier in the literature

Pomeron-Quark Coupling from Charge Conjugation Invariance

International Nuclear Information System (INIS)

Zhou Lijuan; Wu Qing; Ma Weixing; Gu Yunting

2006-01-01

Based on the charge conjugation invariance and the vacuum property of the Pomeron, we point out that the commonly used vector vertex of the Pomeron coupling to quark is incorrect since it contradicts with the Pomeron property. We also claim that the soft Pomeron could be a tensor glueball ξ(2230) with quantum numbers I G J PC = 0 + 2 ++ and total decay width Γ tot ≅100 MeV, which lies on the soft Pomeron trajectory α p = 1.08+0.20t. Therefore, the coupling vertex of the soft Pomeron to quark should be tensorial which is invariant under the charge conjugation and can explain why the inadequate vector coupling, γ μ , of the soft Pomeron to quark is successful in dealing with Pomeron physics.

Proceedings of the workshop on opportunities for atomic physics using slow, highly-charged ions

International Nuclear Information System (INIS)

1987-01-01

The study of atomic physics with highly-charged ions is an area of intense activity at the present time because of a convergence of theoretical interest and advances in experimental techniques. The purpose of the Argonne ''Workshop on Opportunities for Atomic Physics Using Slow, Highly-Charged Ions'' was to bring together atomic, nuclear, and accelerator physicists in order to identify what new facilities would be most useful for the atomic physics community. The program included discussion of existing once-through machines, advanced ion sources, recoil ion techniques, ion traps, and cooler rings. One of the topics of the Workshop was to discuss possible improvement to the ANL Tandem-Linac facility (ATLAS) to enhance the capability for slowing down ions after they are stripped to a high-charge state (the Accel/Decel technique). Another topic was the opportunity for atomic physics provided by the ECR ion source which is being built for the Uranium Upgrade of ATLAS. 18 analytics were prepared for the individual papers in this volume

Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

Directory of Open Access Journals (Sweden)

P. T. Tue

2013-01-01

Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

MOSFET Electric-Charge Sensor

Science.gov (United States)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Multiqubit quantum phase gate using four-level superconducting quantum interference devices coupled to superconducting resonator

Energy Technology Data Exchange (ETDEWEB)

Waseem, Muhammad; Irfan, Muhammad [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan); Qamar, Shahid, E-mail: shahid_qamar@pieas.edu.pk [Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650 (Pakistan)

2012-07-15

In this paper, we propose a scheme to realize three-qubit quantum phase gate of one qubit simultaneously controlling two target qubits using four-level superconducting quantum interference devices (SQUIDs) coupled to a superconducting resonator. The two lowest levels Divides 0 Right-Pointing-Angle-Bracket and Divides 1 Right-Pointing-Angle-Bracket of each SQUID are used to represent logical states while the higher energy levels Divides 2 Right-Pointing-Angle-Bracket and Divides 3 Right-Pointing-Angle-Bracket are utilized for gate realization. Our scheme does not require adiabatic passage, second order detuning, and the adjustment of the level spacing during gate operation which reduce the gate time significantly. The scheme is generalized for an arbitrary n-qubit quantum phase gate. We also apply the scheme to implement three-qubit quantum Fourier transform.

Magnetically coupled resonance wireless charging technology principles and transfer mechanisms

Science.gov (United States)

Zhou, Jiehua; Wan, Jian; Ma, Yinping

2017-05-01

With the tenure of Electric-Vehicle rising around the world, the charging methods have been paid more and more attention, the current charging mode mainly has the charging posts and battery swapping station. The construction of the charging pile or battery swapping station not only require lots of manpower, material costs but the bare conductor is also easy to generate electric spark hidden safety problems, still occupies large space. Compared with the wired charging, wireless charging mode is flexible, unlimited space and location factors and charging for vehicle safety and quickly. It complements the traditional charging methods in adaptability and the independent charge deficiencies. So the researching the wireless charging system have an important practical significance and application value. In this paper, wireless charging system designed is divided into three parts: the primary side, secondary side and resonant coupling. The main function of the primary side is to generate high-frequency alternating current, so selecting CLASS-E amplifier inverter structure through the research on full bridge, half-bridge and power amplification circuit. Addition, the wireless charging system is susceptible to outside interference, frequency drift phenomenon. Combined with the wireless energy transmission characteristics, resonant parts adopt resonant coupling energy transmission scheme and the Series-Series coupling compensation structure. For the electric vehicle charging power and voltage requirements, the main circuit is a full bridge inverter and Boost circuit used as the secondary side.

Proceedings of the workshop on opportunities for atomic physics using slow, highly-charged ions

Energy Technology Data Exchange (ETDEWEB)

1987-01-01

The study of atomic physics with highly-charged ions is an area of intense activity at the present time because of a convergence of theoretical interest and advances in experimental techniques. The purpose of the Argonne ''Workshop on Opportunities for Atomic Physics Using Slow, Highly-Charged Ions'' was to bring together atomic, nuclear, and accelerator physicists in order to identify what new facilities would be most useful for the atomic physics community. The program included discussion of existing once-through machines, advanced ion sources, recoil ion techniques, ion traps, and cooler rings. One of the topics of the Workshop was to discuss possible improvement to the ANL Tandem-Linac facility (ATLAS) to enhance the capability for slowing down ions after they are stripped to a high-charge state (the Accel/Decel technique). Another topic was the opportunity for atomic physics provided by the ECR ion source which is being built for the Uranium Upgrade of ATLAS. 18 analytics were prepared for the individual papers in this volume.

Eslicarbazepine and the enhancement of slow inactivation of voltage-gated sodium channels: a comparison with carbamazepine, oxcarbazepine and lacosamide.

Science.gov (United States)

Hebeisen, Simon; Pires, Nuno; Loureiro, Ana I; Bonifácio, Maria João; Palma, Nuno; Whyment, Andrew; Spanswick, David; Soares-da-Silva, Patrício

2015-02-01

This study aimed at evaluating the effects of eslicarbazepine, carbamazepine (CBZ), oxcarbazepine (OXC) and lacosamide (LCM) on the fast and slow inactivated states of voltage-gated sodium channels (VGSC). The anti-epileptiform activity was evaluated in mouse isolated hippocampal slices. The anticonvulsant effects were evaluated in MES and the 6-Hz psychomotor tests. The whole-cell patch-clamp technique was used to investigate the effects of eslicarbazepine, CBZ, OXC and LCM on sodium channels endogenously expressed in N1E-115 mouse neuroblastoma cells. CBZ and eslicarbazepine exhibit similar concentration dependent suppression of epileptiform activity in hippocampal slices. In N1E-115 mouse neuroblastoma cells, at a concentration of 250 μM, the voltage dependence of the fast inactivation was not influenced by eslicarbazepine, whereas LCM, CBZ and OXC shifted the V0.5 value (mV) by -4.8, -12.0 and -16.6, respectively. Eslicarbazepine- and LCM-treated fast-inactivated channels recovered similarly to control conditions, whereas CBZ- and OXC-treated channels required longer pulses to recover. CBZ, eslicarbazepine and LCM shifted the voltage dependence of the slow inactivation (V0.5, mV) by -4.6, -31.2 and -53.3, respectively. For eslicarbazepine, LCM, CBZ and OXC, the affinity to the slow inactivated state was 5.9, 10.4, 1.7 and 1.8 times higher than to the channels in the resting state, respectively. In conclusion, eslicarbazepine did not share with CBZ and OXC the ability to alter fast inactivation of VGSC. Both eslicarbazepine and LCM reduce VGSC availability through enhancement of slow inactivation, but LCM demonstrated higher interaction with VGSC in the resting state and with fast inactivation gating. Copyright © 2014 Elsevier Ltd. All rights reserved.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

Science.gov (United States)

de Filippo, E.; Lanzanó, G.; Amorini, F.; Cardella, G.; Geraci, E.; Grassi, L.; La Guidara, E.; Lombardo, I.; Politi, G.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-12-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Charging of insulators by multiply-charged-ion impact probed by slowing down of fast binary-encounter electrons

International Nuclear Information System (INIS)

De Filippo, E.; Lanzano, G.; Cardella, G.; Amorini, F.; Geraci, E.; Grassi, L.; Politi, G.; La Guidara, E.; Lombardo, I.; Rizzo, F.; Russotto, P.; Volant, C.; Hagmann, S.; Rothard, H.

2010-01-01

The interaction of ion beams with insulators leads to charging-up phenomena, which at present are under investigation in connection with guiding phenomena in nanocapillaries with possible application in nanofocused beams. We studied the charging dynamics of insulating foil targets [Mylar, polypropylene (PP)] irradiated with swift ion beams (C, O, Ag, and Xe at 40, 23, 40, and 30 MeV/u, respectively) via the measurement of the slowing down of fast binary-encounter electrons. Also, sandwich targets (Mylar covered with a thin Au layer on both surfaces) and Mylar with Au on only one surface were used. Fast-electron spectra were measured by the time-of-flight method at the superconducting cyclotron of Laboratori Nazionali del Sud (LNS) Catania. The charge buildup leads to target-material-dependent potentials of the order of 6.0 kV for Mylar and 2.8 kV for PP. The sandwich targets, surprisingly, show the same behavior as the insulating targets, whereas a single Au layer on the electron and ion exit side strongly suppresses the charging phenomenon. The accumulated number of projectiles needed for charging up is inversely proportional to electronic energy loss. Thus, the charging up is directly related to emission of secondary electrons.

Tuning the allosteric regulation of artificial muscarinic and dopaminergic ligand-gated potassium channels by protein engineering of G protein-coupled receptors

Science.gov (United States)

Moreau, Christophe J.; Revilloud, Jean; Caro, Lydia N.; Dupuis, Julien P.; Trouchet, Amandine; Estrada-Mondragón, Argel; Nieścierowicz, Katarzyna; Sapay, Nicolas; Crouzy, Serge; Vivaudou, Michel

2017-01-01

Ligand-gated ion channels enable intercellular transmission of action potential through synapses by transducing biochemical messengers into electrical signal. We designed artificial ligand-gated ion channels by coupling G protein-coupled receptors to the Kir6.2 potassium channel. These artificial channels called ion channel-coupled receptors offer complementary properties to natural channels by extending the repertoire of ligands to those recognized by the fused receptors, by generating more sustained signals and by conferring potassium selectivity. The first artificial channels based on the muscarinic M2 and the dopaminergic D2L receptors were opened and closed by acetylcholine and dopamine, respectively. We find here that this opposite regulation of the gating is linked to the length of the receptor C-termini, and that C-terminus engineering can precisely control the extent and direction of ligand gating. These findings establish the design rules to produce customized ligand-gated channels for synthetic biology applications. PMID:28145461

A self triggered intensified Ccd (Stic)

International Nuclear Information System (INIS)

Charon, Y.; Laniece, P.; Bendali, M.

1990-01-01

We are developing a new device based on the results reported previously of the successfull coincidence detection of β- particles with a high spatial resolution [1]. The novelty of the device consists in triggering an intensified CCD, i.e. a CCD coupled to an image intensifier (II), by an electrical signal collected from the II itself. This is a suitable procedure for detecting with high efficiency and high resolution low light rare events. The trigger pulse is obtained from the secondary electrons produced by multiplication in a double microchannel plate (MCP) and collected on the aluminized layer protecting the phosphor screen in the II. Triggering efficiencies up to 80% has been already achieved

Electron stereodynamics in coulomb explosion of molecules by slow highly charged ions

International Nuclear Information System (INIS)

Ichimura, Atsushi; Ohyama-Yamaguchi, Tomoko

2008-01-01

The three-center Coulombic over-the-barrier model is developed for Coulomb explosion of a homonuclear diatomic molecule in collisions with a slow (∼10 eV/amu) highly charged ion. A conventional two-step picture of multiple electron transfer followed by Coulomb explosion is far from appropriate because the molecule sets out to dissociate before the incident ion approaches the closest distance. We treat the formation of a quasi-molecule and its decay into the three moving atomic ions. Charge-asymmetric population between fragment ions observed in a triple-coincidence measurement is suggested to reflect the bond elongation during a collision. Collisions of Kr 8+ + N 2 are analyzed. (author)

Energy spectra from coupled electron-photon slowing down

International Nuclear Information System (INIS)

Beck, H.L.

1976-08-01

A coupled electron-photon slowing down calculation for determining electron and photon track length in uniform homogeneous media is described. The method also provides fluxes for uniformly distributed isotropic sources. Source energies ranging from 10 keV to over 10 GeV are allowed and all major interactions are treated. The calculational technique and related cross sections are described in detail and sample calculations are discussed. A listing of the Fortran IV computer code used for the calculations is also included. 4 tables, 7 figures, 16 references

Laser-induced breakdown spectroscopy and inductively coupled plasma-mass spectrometry for determination of Cr in soils from Brits District, South Africa

Directory of Open Access Journals (Sweden)

A. A. Ambushe

2015-10-01

Full Text Available Laser-induced breakdown spectroscopy (LIBS is an emerging analytical technique, which can be used to perform elemental analysis of any material, irrespective of its physical state. In this study, the LIBS technique has been applied for quantification of total Cr in soil samples collected from polluted areas of Brits, North West Province, South Africa. A Q-switched neodymium-yttrium aluminium garnet (Nd-YAG laser (10 Hz, λ = 1064 nm was employed for generation of a laser-induced plasma on the surface of the soil sample. The atomic emission lines were recorded using an Andor Shamrock SR-303i spectrometer, fitted with an intensified charge-coupled device (ICCD camera. Detailed investigation of experimental parameters such as gate delay time, gate width and laser pulse energy was conducted. Soil samples were dried, finely ground, sieved and thereafter pelletized before LIBS analysis. Calibration curve for the quantification of Cr was constructed using certified reference materials of soils and sediments. The concentrations of Cr in soil samples varied from 111 to 3180 mg/kg. In order to test the validity of the LIBS results, inductively coupled plasma-mass spectrometry (ICP-MS was also employed for determination of Cr. The results obtained using LIBS were found to be in good agreement with those of ICP-MS.DOI: http://dx.doi.org/10.4314/bcse.v29i3.3

Coupled quantum electrodynamics in photonic crystal cavities towards controlled phase gate operations

International Nuclear Information System (INIS)

Xiao, Y-F; Gao, J; McMillan, J F; Yang, X; Wong, C W; Zou, X-B; Chen, Y-L; Han, Z-F; Guo, G-C

2008-01-01

In this paper, a scalable photonic crystal cavity array, in which single embedded quantum dots (QDs) are coherently interacting, is studied theoretically. Firstly, we examine the spectral character and optical delay brought about by the coupled cavities interacting with single QDs, in an optical analogue to electromagnetically induced transparency. Secondly, we then examine the usability of this coupled QD-cavity system for quantum phase gate operation and our numerical examples suggest that a two-qubit system with fidelity above 0.99 and photon loss below 0.04 is possible.

Low-photon-number optical switch and AND/OR logic gates based on quantum dot-bimodal cavity coupling system.

Science.gov (United States)

Ma, Shen; Ye, Han; Yu, Zhong-Yuan; Zhang, Wen; Peng, Yi-Wei; Cheng, Xiang; Liu, Yu-Min

2016-01-11

We propose a new scheme based on quantum dot-bimodal cavity coupling system to realize all-optical switch and logic gates in low-photon-number regime. Suppression of mode transmission due to the destructive interference effect is theoretically demonstrated by driving the cavity with two orthogonally polarized pulsed lasers at certain pulse delay. The transmitted mode can be selected by designing laser pulse sequence. The optical switch with high on-off ratio emerges when considering one driving laser as the control. Moreover, the AND/OR logic gates based on photon polarization are achieved by cascading the coupling system. Both proposed optical switch and logic gates work well in ultra-low energy magnitude. Our work may enable various applications of all-optical computing and quantum information processing.

Suppression of chaos at slow variables by rapidly mixing fast dynamics through linear energy-preserving coupling

Science.gov (United States)

Abramov, R. V.

2011-12-01

Chaotic multiscale dynamical systems are common in many areas of science, one of the examples being the interaction of the low-frequency dynamics in the atmosphere with the fast turbulent weather dynamics. One of the key questions about chaotic multiscale systems is how the fast dynamics affects chaos at the slow variables, and, therefore, impacts uncertainty and predictability of the slow dynamics. Here we demonstrate that the linear slow-fast coupling with the total energy conservation property promotes the suppression of chaos at the slow variables through the rapid mixing at the fast variables, both theoretically and through numerical simulations. A suitable mathematical framework is developed, connecting the slow dynamics on the tangent subspaces to the infinite-time linear response of the mean state to a constant external forcing at the fast variables. Additionally, it is shown that the uncoupled dynamics for the slow variables may remain chaotic while the complete multiscale system loses chaos and becomes completely predictable at the slow variables through increasing chaos and turbulence at the fast variables. This result contradicts the common sense intuition, where, naturally, one would think that coupling a slow weakly chaotic system with another much faster and much stronger chaotic system would result in general increase of chaos at the slow variables.

Possible Diamond-Like Nanoscale Structures Induced by Slow Highly-Charged Ions on Graphite (HOPG)

Energy Technology Data Exchange (ETDEWEB)

Sideras-Haddad, E.; Schenkel, T.; Shrivastava, S.; Makgato, T.; Batra, A.; Weis, C. D.; Persaud, A.; Erasmus, R.; Mwakikunga, B.

2009-01-06

The interaction between slow highly-charged ions (SHCI) of different charge states from an electron-beam ion trap and highly oriented pyrolytic graphite (HOPG) surfaces is studied in terms of modification of electronic states at single-ion impact nanosizeareas. Results are presented from AFM/STM analysis of the induced-surface topological features combined with Raman spectroscopy. I-V characteristics for a number of different impact regions were measured with STM and the results argue for possible formation of diamond-like nanoscale structures at the impact sites.

Design and implementation of fast charging circuit for repetitive compact torus injector

International Nuclear Information System (INIS)

Onchi, T.; McColl, D.; Dreval, M.; Wolfe, S.; Xiao, C.; Hirose, A.

2014-01-01

A novel circuit for compact torus (CT) injector operated at high repetition rates has been developed. The core technology adopted in the present work is to charge a large storage capacitor bank and quickly charge the CT capacitor bank through a stack of insulated-gate bipolar transistors (IGBTs). A system consisting of IGBTs and slow banks for the repetitive operation has been developed and installed for each discharge circuit of the University of Saskatchewan Compact Torus Injector (USCTI). A repetition rate up to 1.7 Hz and a burst of 8 CTs have been achieved

Gating of human ClC-2 chloride channels and regulation by carboxy-terminal domains.

Science.gov (United States)

Garcia-Olivares, Jennie; Alekov, Alexi; Boroumand, Mohammad Reza; Begemann, Birgit; Hidalgo, Patricia; Fahlke, Christoph

2008-11-15

Eukaryotic ClC channels are dimeric proteins with each subunit forming an individual protopore. Single protopores are gated by a fast gate, whereas the slow gate is assumed to control both protopores through a cooperative movement of the two carboxy-terminal domains. We here study the role of the carboxy-terminal domain in modulating fast and slow gating of human ClC-2 channels, a ubiquitously expressed ClC-type chloride channel involved in transepithelial solute transport and in neuronal chloride homeostasis. Partial truncation of the carboxy-terminus abolishes function of ClC-2 by locking the channel in a closed position. However, unlike other isoforms, its complete removal preserves function of ClC-2. ClC-2 channels without the carboxy-terminus exhibit fast and slow gates that activate and deactivate significantly faster than in WT channels. In contrast to the prevalent view, a single carboxy-terminus suffices for normal slow gating, whereas both domains regulate fast gating of individual protopores. Our findings demonstrate that the carboxy-terminus is not strictly required for slow gating and that the cooperative gating resides in other regions of the channel protein. ClC-2 is expressed in neurons and believed to open at negative potentials and increased internal chloride concentrations after intense synaptic activity. We propose that the function of the ClC-2 carboxy-terminus is to slow down the time course of channel activation in order to stabilize neuronal excitability.

Space charge calibration of the ALICE TPC operated with an open gating grid

Energy Technology Data Exchange (ETDEWEB)

Hellbaer, Ernst [Institut fuer Kernphysik, Goethe-Universitaet Frankfurt (Germany); Ivanov, Marian [GSI (Germany); Wiechula, Jens [Universitaet Tuebingen (Germany); Collaboration: ALICE-Collaboration

2015-07-01

The Time Projection Chamber (TPC) is the main particle identification detector of the ALICE experiment at the CERN LHC. High interaction rates of 50 kHz in Pb-Pb during the Run 3 period after 2020 require a major upgrade of the TPC readout. The currently used Multiwire Proportional Chambers (MWPCs) will be replaced by readout chambers (ROCs) based on Gas Electron Multiplier (GEM) technology which will be operated in a continuous mode. While the gating grid of the MWPCs prevents the positive ions of the amplification region from entering the drift volume, the GEM-based ROCs will introduce an ion backflow (IBF) of about 1%. In combination with the high-luminosity environment, this amount of back-drifting ions results in a considerable space charge density which distorts the drift path of the primary ionisation electrons significantly. In order to still provide a high tracking efficiency and cluster-to-track association, an efficient calibration scheme will be implemented. As a test ground for the new calibration scheme, pp collision data was taken during Run 1 with the gating grid operated in a transparent mode allowing the ions to enter the drift volume. The measured space point distortions due to the space charge are presented together with the corrected data and compared to simulations for Run 3.

Intimately coupling of photolysis accelerates nitrobenzene biodegradation, but sequential coupling slows biodegradation

Energy Technology Data Exchange (ETDEWEB)

Yang, Lihui [Department of Environmental Science and Engineering, College of Life and Environmental Science, Shanghai Normal University, Shanghai 200234 (China); Zhang, Yongming, E-mail: zhym@shnu.edu.cn [Department of Environmental Science and Engineering, College of Life and Environmental Science, Shanghai Normal University, Shanghai 200234 (China); Bai, Qi; Yan, Ning; Xu, Hua [Department of Environmental Science and Engineering, College of Life and Environmental Science, Shanghai Normal University, Shanghai 200234 (China); Rittmann, Bruce E. [Swette Center for Environmental Biotechnology, Biodesign Institute, Arizona State University, Tempe, AZ 85287-5701 (United States)

2015-04-28

Highlights: • Intimately coupled UV photolysis accelerated nitrobenzene biodegradation. • NB biodegradation was slowed by accumulation of nitrophenol. • Oxalic acid was a key product of UV photolysis. • Oxalic acid accelerated biodegradation of nitrobenzene and nitrophenol by a co-substrate effect. • Intimate coupling of UV and biodegradation accentuated the benefits of oxalic acid. - Abstract: Photo(cata)lysis coupled with biodegradation is superior to photo(cata)lysis or biodegradation alone for removal of recalcitrant organic compounds. The two steps can be carried out sequentially or simultaneously via intimate coupling. We studied nitrobenzene (NB) removal and mineralization to evaluate why intimate coupling of photolysis with biodegradation was superior to sequential coupling. Employing an internal circulation baffled biofilm reactor, we compared direct biodegradation (B), biodegradation after photolysis (P + B), simultaneous photolysis and biodegradation (P&B), and biodegradation with nitrophenol (NP) and oxalic acid (OA) added individually and simultaneously (B + NP, B + OA, and B + NP + OA); NP and OA were NB’s main UV-photolysis products. Compared with B, the biodegradation rate P + B was lower by 13–29%, but intimately coupling (P&B) had a removal rate that was 10–13% higher; mineralization showed similar trends. B + OA gave results similar to P&B, B + NP gave results similar to P + B, and B + OA + NP gave results between P + B and P&B, depending on the amount of OA and NP added. The photolysis product OA accelerated NB biodegradation through a co-substrate effect, but NP was inhibitory. Although decreasing the UV photolysis time could minimize the inhibition impact of NP in P + B, P&B gave the fastest removal of NB by accentuating the co-substrate effect of OA.

Intimately coupling of photolysis accelerates nitrobenzene biodegradation, but sequential coupling slows biodegradation

International Nuclear Information System (INIS)

Yang, Lihui; Zhang, Yongming; Bai, Qi; Yan, Ning; Xu, Hua; Rittmann, Bruce E.

2015-01-01

Highlights: • Intimately coupled UV photolysis accelerated nitrobenzene biodegradation. • NB biodegradation was slowed by accumulation of nitrophenol. • Oxalic acid was a key product of UV photolysis. • Oxalic acid accelerated biodegradation of nitrobenzene and nitrophenol by a co-substrate effect. • Intimate coupling of UV and biodegradation accentuated the benefits of oxalic acid. - Abstract: Photo(cata)lysis coupled with biodegradation is superior to photo(cata)lysis or biodegradation alone for removal of recalcitrant organic compounds. The two steps can be carried out sequentially or simultaneously via intimate coupling. We studied nitrobenzene (NB) removal and mineralization to evaluate why intimate coupling of photolysis with biodegradation was superior to sequential coupling. Employing an internal circulation baffled biofilm reactor, we compared direct biodegradation (B), biodegradation after photolysis (P + B), simultaneous photolysis and biodegradation (P&B), and biodegradation with nitrophenol (NP) and oxalic acid (OA) added individually and simultaneously (B + NP, B + OA, and B + NP + OA); NP and OA were NB’s main UV-photolysis products. Compared with B, the biodegradation rate P + B was lower by 13–29%, but intimately coupling (P&B) had a removal rate that was 10–13% higher; mineralization showed similar trends. B + OA gave results similar to P&B, B + NP gave results similar to P + B, and B + OA + NP gave results between P + B and P&B, depending on the amount of OA and NP added. The photolysis product OA accelerated NB biodegradation through a co-substrate effect, but NP was inhibitory. Although decreasing the UV photolysis time could minimize the inhibition impact of NP in P + B, P&B gave the fastest removal of NB by accentuating the co-substrate effect of OA

Correlated double electron capture in slow, highly charged ion-atom collisions

International Nuclear Information System (INIS)

Stolterfoht, N.; Havener, C.C.; Phaneuf, R.A.; Swenson, J.K.; Shafroth, S.M.; Meyer, F.W.

1986-01-01

Recent measurements of autoionization electrons produced in slow, highly charged ion-atom collisions are reviewed. Mechanisms for double electron capture into equivalent and nonequivalent configurations are analyzed by comparing the probabilities for the creation of L 1 L 23 X Coster Kronig electrons and L-Auger electrons. It is shown that the production of the Coster-Kronig electrons is due to electron correlation effects whose analysis leads beyond the independent-particle model. The importance of correlation effects on different capture mechanisms is discussed. 28 refs., 6 figs

Design And Construction Of Wireless Charging System Using Inductive Coupling

Directory of Open Access Journals (Sweden)

Do Lam Mung

2015-06-01

Full Text Available Abstract Wireless charging system described by using the method of inductive coupling. In this project oscillation circuit converts DC energy to AC energytransmitter coil to transmit magnetic field by passing frequency and then induce the receiver coil. The properties of Induction coupling are wavemagnetic field-wideband rangevery shortcm efficiencyhight and operation frequencyLF-bandseveral handred kHz.The project shows as a small charging for 5V battery of phone in this method. The system bases on coupling magnetic field then designed and constructed as two parts. There are transmitter part and receiver part. The transmitter coil transmitter part transmits coupling magnetic field to receiver coil receiver part by passing frequency at about 1.67MHz. The Amperes law Biot-Savart law and Faraday law are used to calculate the inductive coupling between the transmitter coil and the receiver coil. The calculation of this law shows how many power transfer in receiver part when how many distance between the transmitter coil and the receiver coil. The system is safe for users and neighbouring electronic devices. To get more accurate wireless charging system it needs to change the design of the following keywords.

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

Science.gov (United States)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

The effect of temperature on guiding of slow highly charged ions through a mesoscopic glass capillary

International Nuclear Information System (INIS)

Bereczky, R J; Tökési, K; Kowarik, G; Ladinig, F; Schrempf, D; Aumayr, F

2012-01-01

We present first temperature dependent transmission measurements of slow highly charged ions through a single, straight Duran glass capillary with a high aspect ratio. By changing the temperature of the glass capillary the electrical conductivity of the Duran can be varied by several orders of magnitude. This held the promise to investigate the effect of conductivity on particle transport (build-up and removal of charge patches) through capillaries in more details.

Resonant charging and stopping power of slow channelling atoms in a crystalline metal

International Nuclear Information System (INIS)

Mason, D R; Race, C P; Foo, M H F; Horsfield, A P; Foulkes, W M C; Sutton, A P

2012-01-01

Fast moving ions travel great distances along channels between low-index crystallographic planes, slowing through collisions with electrons, until finally they hit a host atom initiating a cascade of atomic displacements. Statistical penetration ranges of incident particles are reliably used in ion-implantation technologies, but a full, necessarily quantum-mechanical, description of the stopping of slow, heavy ions is challenging and the results of experimental investigations are not fully understood. Using a self-consistent model of the electronic structure of a metal, and explicit treatment of atomic structure, we find by direct simulation a resonant accumulation of charge on a channelling ion analogous to the Okorokov effect but originating in electronic excitation between delocalized and localized valence states on the channelling ion and its transient host neighbours, stimulated by the time-periodic potential experienced by the channelling ion. The charge resonance reduces the electronic stopping power on the channelling ion. These are surprising and interesting new chemical aspects of channelling, which cannot be predicted within the standard framework of ions travelling through homogeneous electron gases or by considering either ion or target in isolation. (paper)

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

Science.gov (United States)

Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Correlated double electron capture in slow, highly charged ion-atom collisions

Energy Technology Data Exchange (ETDEWEB)

Stolterfoht, N.; Havener, C.C.; Phaneuf, R.A.; Swenson, J.K.; Shafroth, S.M.; Meyer, F.W.

1986-01-01

Recent measurements of autoionization electrons produced in slow, highly charged ion-atom collisions are reviewed. Mechanisms for double electron capture into equivalent and nonequivalent configurations are analyzed by comparing the probabilities for the creation of L/sub 1/L/sub 23/X Coster Kronig electrons and L-Auger electrons. It is shown that the production of the Coster-Kronig electrons is due to electron correlation effects whose analysis leads beyond the independent-particle model. The importance of correlation effects on different capture mechanisms is discussed. 28 refs., 6 figs.

Coupling spin qubits via superconductors

DEFF Research Database (Denmark)

Leijnse, Martin; Flensberg, Karsten

2013-01-01

We show how superconductors can be used to couple, initialize, and read out spatially separated spin qubits. When two single-electron quantum dots are tunnel coupled to the same superconductor, the singlet component of the two-electron state partially leaks into the superconductor via crossed...... Andreev reflection. This induces a gate-controlled singlet-triplet splitting which, with an appropriate superconductor geometry, remains large for dot separations within the superconducting coherence length. Furthermore, we show that when two double-dot singlet-triplet qubits are tunnel coupled...... to a superconductor with finite charging energy, crossed Andreev reflection enables a strong two-qubit coupling over distances much larger than the coherence length....

Photoinduced ultrafast charge-order melting: Charge-order inversion and nonthermal effects

International Nuclear Information System (INIS)

Veenendaal, Michel van

2016-01-01

The effect of photoexcitation is studied for a system with checkerboard charge order induced by displacements of ligands around a metal site. The motion of the ligands is treated classically and the electronic charges are simplified to two-level molecular bond charges. The calculations are done for a checkerboard charge-ordered system with about 100 000 ligand oscillators coupled to a fixed-temperature bath. The initial photoexcitation is followed by a rapid decrease in the charge-order parameter within 50–100 femtoseconds while leaving the correlation length almost unchanged. Depending on the fluence, a complete melting of the charge order occurs in less than a picosecond. While for low fluences, the system returns to its original state, for full melting, it recovers to its broken-symmetry state leading to an inversion of the charge order. Finally, for small long-range interactions, recovery can be slow due to domain formation.

Critical slowing down and the gradient flow coupling in the Schroedinger functional

Energy Technology Data Exchange (ETDEWEB)

Fritzsch, Patrick; Stollenwerk, Felix [Humboldt-Universitaet, Berlin (Germany). Inst. fuer Physik; Ramos, Alberto [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

2013-11-15

We study the sensitivity of the gradient flow coupling to sectors of different topological charge and its implications in practical situations. Furthermore, we investigate an alternative definition of the running coupling that is expected to be less sensitive to the problems of the HMC algorithm to efficiently sample all topological sectors.

Critical slowing down and the gradient flow coupling in the Schroedinger functional

International Nuclear Information System (INIS)

Fritzsch, Patrick; Stollenwerk, Felix; Ramos, Alberto

2013-11-01

We study the sensitivity of the gradient flow coupling to sectors of different topological charge and its implications in practical situations. Furthermore, we investigate an alternative definition of the running coupling that is expected to be less sensitive to the problems of the HMC algorithm to efficiently sample all topological sectors.

Structured-gate organic field-effect transistors

International Nuclear Information System (INIS)

Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

2012-01-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

Structured-gate organic field-effect transistors

Science.gov (United States)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Proposal for quantum gates in permanently coupled antiferromagnetic spin rings without need of local fields.

Science.gov (United States)

Troiani, Filippo; Affronte, Marco; Carretta, Stefano; Santini, Paolo; Amoretti, Giuseppe

2005-05-20

We propose a scheme for the implementation of quantum gates which is based on the qubit encoding in antiferromagnetic molecular rings. We show that a proper engineering of the intercluster link would result in an effective coupling that vanishes as far as the system is kept in the computational space, while it is turned on by a selective excitation of specific auxiliary states. These are also shown to allow the performing of single-qubit and two-qubit gates without an individual addressing of the rings by means of local magnetic fields.

Improving radiation hardness in space-based Charge-Coupled Devices through the narrowing of the charge transfer channel

Science.gov (United States)

Hall, D. J.; Skottfelt, J.; Soman, M. R.; Bush, N.; Holland, A.

2017-12-01

Charge-Coupled Devices (CCDs) have been the detector of choice for imaging and spectroscopy in space missions for several decades, such as those being used for the Euclid VIS instrument and baselined for the SMILE SXI. Despite the many positive properties of CCDs, such as the high quantum efficiency and low noise, when used in a space environment the detectors suffer damage from the often-harsh radiation environment. High energy particles can create defects in the silicon lattice which act to trap the signal electrons being transferred through the device, reducing the signal measured and effectively increasing the noise. We can reduce the impact of radiation on the devices through four key methods: increased radiation shielding, device design considerations, optimisation of operating conditions, and image correction. Here, we concentrate on device design operations, investigating the impact of narrowing the charge-transfer channel in the device with the aim of minimising the impact of traps during readout. Previous studies for the Euclid VIS instrument considered two devices, the e2v CCD204 and CCD273, the serial register of the former having a 50 μm channel and the latter having a 20 μm channel. The reduction in channel width was previously modelled to give an approximate 1.6× reduction in charge storage volume, verified experimentally to have a reduction in charge transfer inefficiency of 1.7×. The methods used to simulate the reduction approximated the charge cloud to a sharp-edged volume within which the probability of capture by traps was 100%. For high signals and slow readout speeds, this is a reasonable approximation. However, for low signals and higher readout speeds, the approximation falls short. Here we discuss a new method of simulating and calculating charge storage variations with device design changes, considering the absolute probability of capture across the pixel, bringing validity to all signal sizes and readout speeds. Using this method, we

Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

Directory of Open Access Journals (Sweden)

S. Li

2018-02-01

Full Text Available Pentacene based double nano-floating gate memories (NFGM by using gold nanoparticles (Au NPs and reduced graphene oxide (rGO sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT self-assembled monolayers (SAM exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

Science.gov (United States)

Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

2018-02-01

Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Science.gov (United States)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Charge exchange in slow collisions of Si3+ with H

Science.gov (United States)

Joseph, D. C.; Saha, B. C.

2010-10-01

Low energy electron capture from atomic hydrogen by multi-charged ions continues to be of interest and has wide applications including both magnetically confined^ fusion and astrophysical plasmas. The charge exchange process reported here, Si^3+ + H -- Si^2+ + H^+ is an important destruction mechanism of Si^3+ in photo-ionized gas. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si^3+, with neutrals in the cometary gas vapor. The state selective cross sections are evaluated using the semi-classical molecular orbital close coupling (MOCC) [1] methods. Adiabatic potentials and wave functions for a number of low-lying singlet and triplet states are calculated using the MRD-CI package [2]. Details will be presented at the conference. [1] M. Kimura and N. F. Lane, At. Mol. Opt. Phys 26, 79 (1990). [3] R. J. Buenker, ``Current Aspects of Quantum Chemistry'' 1981, Vol 21, edited by R. Carbo (Elsevier, Amsterdam) p 17.

Density-dependent coupling constants and charge symmetry breaking

International Nuclear Information System (INIS)

Barreiro, L.A.

2001-01-01

The effect of the medium in the coupling constants implicate in a charge symmetry breaking on nuclear interactions. The amount of energy due to this modification can explain the Nolen-Schiffer anomaly. (author)

Observaton of tunneling of slow and fast electromagnetic modes in coupled periodic waveguides

DEFF Research Database (Denmark)

Ha, Sangwoo; Sukhorukov, Andrey A.; Lavrinenko, Andrei

2011-01-01

We report the experimental observation of tunneling of slow and fast electromagnetic modes in coupled periodic waveguides shifted longitudinally by half of modulation period. According to the symmetry analysis, such a coupler supports two electromagnetic modes with exactly matched slow or fast...... group velocities but different phase velocities for frequencies close to the edge of the photonic band. We confirm the predicted properties of the modes by directly extracting their dispersion and group velocities from the near-field measurements using specialized Bloch-wave spectral analysis method....

Interactions between charged residues in the transmembrane segments of the voltage-sensing domain in the hERG channel.

Science.gov (United States)

Zhang, M; Liu, J; Jiang, M; Wu, D-M; Sonawane, K; Guy, H R; Tseng, G-N

2005-10-01

Studies on voltage-gated K channels such as Shaker have shown that positive charges in the voltage-sensor (S4) can form salt bridges with negative charges in the surrounding transmembrane segments in a state-dependent manner, and different charge pairings can stabilize the channels in closed or open states. The goal of this study is to identify such charge interactions in the hERG channel. This knowledge can provide constraints on the spatial relationship among transmembrane segments in the channel's voltage-sensing domain, which are necessary for modeling its structure. We first study the effects of reversing S4's positive charges on channel activation. Reversing positive charges at the outer (K525D) and inner (K538D) ends of S4 markedly accelerates hERG activation, whereas reversing the 4 positive charges in between either has no effect or slows activation. We then use the 'mutant cycle analysis' to test whether D456 (outer end of S2) and D411 (inner end of S1) can pair with K525 and K538, respectively. Other positive charges predicted to be able, or unable, to interact with D456 or D411 are also included in the analysis. The results are consistent with predictions based on the distribution of these charged residues, and confirm that there is functional coupling between D456 and K525 and between D411 and K538.

Direct Structural Identification of Gas Induced Gate-Opening Coupled with Commensurate Adsorption in a Microporous Metal-Organic Framework.

Science.gov (United States)

Banerjee, Debasis; Wang, Hao; Plonka, Anna M; Emge, Thomas J; Parise, John B; Li, Jing

2016-08-08

Gate-opening is a unique and interesting phenomenon commonly observed in flexible porous frameworks, where the pore characteristics and/or crystal structures change in response to external stimuli such as adding or removing guest molecules. For gate-opening that is induced by gas adsorption, the pore-opening pressure often varies for different adsorbate molecules and, thus, can be applied to selectively separate a gas mixture. The detailed understanding of this phenomenon is of fundamental importance to the design of industrially applicable gas-selective sorbents, which remains under investigated due to the lack of direct structural evidence for such systems. We report a mechanistic study of gas-induced gate-opening process of a microporous metal-organic framework, [Mn(ina)2 ] (ina=isonicotinate) associated with commensurate adsorption, by a combination of several analytical techniques including single crystal X-ray diffraction, in situ powder X-ray diffraction coupled with differential scanning calorimetry (XRD-DSC), and gas adsorption-desorption methods. Our study reveals that the pronounced and reversible gate opening/closing phenomena observed in [Mn(ina)2 ] are coupled with a structural transition that involves rotation of the organic linker molecules as a result of interaction of the framework with adsorbed gas molecules including carbon dioxide and propane. The onset pressure to open the gate correlates with the extent of such interaction. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A negative charge in transmembrane segment 1 of domain II of the cockroach sodium channel is critical for channel gating and action of pyrethroid insecticides

International Nuclear Information System (INIS)

Du Yuzhe; Song Weizhong; Groome, James R.; Nomura, Yoshiko; Luo Ningguang; Dong Ke

2010-01-01

Voltage-gated sodium channels are the primary target of pyrethroids, an important class of synthetic insecticides. Pyrethroids bind to a distinct receptor site on sodium channels and prolong the open state by inhibiting channel deactivation and inactivation. Recent studies have begun to reveal sodium channel residues important for pyrethroid binding. However, how pyrethroid binding leads to inhibition of sodium channel deactivation and inactivation remains elusive. In this study, we show that a negatively charged aspartic acid residue at position 802 (D802) located in the extracellular end of transmembrane segment 1 of domain II (IIS1) is critical for both the action of pyrethroids and the voltage dependence of channel activation. Charge-reversing or -neutralizing substitutions (K, G, or A) of D802 shifted the voltage dependence of activation in the depolarizing direction and reduced channel sensitivity to deltamethrin, a pyrethroid insecticide. The charge-reversing mutation D802K also accelerated open-state deactivation, which may have counteracted the inhibition of sodium channel deactivation by deltamethrin. In contrast, the D802G substitution slowed open-state deactivation, suggesting an additional mechanism for neutralizing the action of deltamethrin. Importantly, Schild analysis showed that D802 is not involved in pyrethroid binding. Thus, we have identified a sodium channel residue that is critical for regulating the action of pyrethroids on the sodium channel without affecting the receptor site of pyrethroids.

Slow wave antenna coupling to ion Bernstein waves for plasma heating in ICRF

International Nuclear Information System (INIS)

Sy, W.N-C.; Amano, T.; Ando, R.; Fukuyama, A.; Watari, T.

1984-10-01

The coupling of ICRF power from a slow wave antenna to a plasma with finite temperature is examined theoretically and compared to an independent computer calculation. It is shown that such antennas can be highly efficient in trasferring most of the antenna power directly to ion Bernstein waves, with only a very small fraction going into fast waves. The potentiality of this coupling scheme for plasma heating in ICRF is briefly discussed. (author)

Zero deadtime spectroscopy without full charge collection

International Nuclear Information System (INIS)

Odell, D.M.C.; Bushart, B.S.; Harpring, L.J.; Moore, F.S.; Riley, T.N.

1998-01-01

The Savannah River Technology Center has built a remote gamma monitoring instrument which employs data sampling techniques rather than full charge collection to perform energy spectroscopy without instrument dead time. The raw, unamplified anode output of a photomultiplier tube is directly coupled to the instrument to generate many digital samples during the charge collection process, so that all pulse processing is done in the digital domain. The primary components are a free-running, 32 MSPS, 10-bit A/D, a field programmable gate array, FIFO buffers, and a digital signal processor (DSP). Algorithms for pulse integration, pile-up rejection, and other shape based criteria are being developed in DSP code for migration into the gate array. Spectra taken with a two inch Na(I) detector have been obtained at rates as high as 59,000 counts per second without dead time with peak resolution at 662 KeV measuring 7.3%

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Science.gov (United States)

Xu, Huifang; Dai, Yuehua

2017-02-01

A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

Electrom emission from slow highly charged ions interacting with a metal surface

International Nuclear Information System (INIS)

Aumayr, F.; Kurz, H.; Toeglhofer, K.; Winter, H.

1992-01-01

Recent progress in investigating electron emission from slow highly charged ions approaching a metal surface is discussed. In particular, new informations on generation and decay of transient multiply excited ''hollow atoms'' developing during these processes have been gained from measurement of the statistics of emitted electrons (ES). ES and precise total electron yields derived from the former have been measured for normal incidence of slow (impact velocity 1/15.10 4 ms -1 ) multicharged ions N q+ (q≤6), Ne q+ (q≤10), Ar q+ (q≤16), Kr q+ (q≤10), Xe q+ (q≤10) and I q+ (q≤25) on clean polycrystalline gold. A classical over-barrier approach as recently introduced by Burgdoerfer et al. 1991 has been extended and successfully applied to model the measured impact-velocity dependences of total electron yields. In this way contributions from different electron emission mechanisms could be identified. (orig.)

Development of a high-resolution Thomson scattering system for plasma interactions with molten salt (FLiNaK)

Energy Technology Data Exchange (ETDEWEB)

Lee, K. Y. [National Fusion Research Institute, Gunsan (Korea, Republic of)

2014-10-15

A high-resolution Thomson scattering system is presently being developed to measure the electron temperature and density profile during plasma interaction with molten salt. The system uses a 20-Hz Nd:YAG laser operating at the second harmonic (532 nm). The collection lens, having a 1:10 magnification ratio, measures 63 points along the 10-cm profile. The scattered light is transmitted by using an optical-fiber bundle, and is analyzed with a triple-grating spectrometer to further reduce stray light. Its spectral resolution is expected to be 0.03 nm. An intensified charge-coupled device (ICCD) camera consisting of a gated image intensifier coupled to the CCD camera is used to record the spectral distribution of the scattered light. An additional feature of operating the ICCD camera at 40-Hz to record the background signal is incorporated.

A Thomson-type mass and energy spectrometer for characterizing ion energy distributions in a coaxial plasma gun operating in a gas-puff mode

OpenAIRE

Rieker, G. B.; Poehlmann, F. R.; Cappelli, M. A.

2013-01-01

Measurements of ion energy distribution are performed in the accelerated plasma of a coaxial electromagnetic plasma gun operating in a gas-puff mode at relatively low discharge energy (900 J) and discharge potential (4 kV). The measurements are made using a Thomson-type mass and energy spectrometer with a gated microchannel plate and phosphor screen as the ion sensor. The parabolic ion trajectories are captured from the sensor screen with an intensified charge-coupled detector camera. The spe...

Quantum–classical simulations of the electronic stopping force and charge on slow heavy channelling ions in metals

International Nuclear Information System (INIS)

Race, C P; Mason, D R; Foo, M H F; Foulkes, W M C; Sutton, A P; Horsfield, A P

2013-01-01

By simulating the passage of heavy ions along open channels in a model crystalline metal using semi-classical Ehrenfest dynamics we directly investigate the nature of non-adiabatic electronic effects. Our time-dependent tight-binding approach incorporates both an explicit quantum mechanical electronic system and an explicit representation of a set of classical ions. The coupled evolution of the ions and electrons allows us to explore phenomena that lie beyond the approximations made in classical molecular dynamics simulations and in theories of electronic stopping. We report a velocity-dependent charge-localization phenomenon not predicted by previous theoretical treatments of channelling. This charge localization can be attributed to the excitation of electrons into defect states highly localized on the channelling ion. These modes of excitation only become active when the frequency at which the channelling ion moves from interstitial point to equivalent interstitial point matches the frequency corresponding to excitations from the Fermi level into the localized states. Examining the stopping force exerted on the channelling ion by the electronic system, we find broad agreement with theories of slow ion stopping (a stopping force proportional to velocity) for a low velocity channelling ion (up to about 0.5 nm fs −1 from our calculations), and a reduction in stopping power attributable to the charge localization effect at higher velocities. By exploiting the simplicity of our electronic structure model we are able to illuminate the physics behind the excitation processes that we observe and present an intuitive picture of electronic stopping from a real-space, chemical perspective. (paper)

Suppression of chaos at slow variables by rapidly mixing fast dynamics through linear energy-preserving coupling

OpenAIRE

Abramov, Rafail V.

2011-01-01

Chaotic multiscale dynamical systems are common in many areas of science, one of the examples being the interaction of the low-frequency dynamics in the atmosphere with the fast turbulent weather dynamics. One of the key questions about chaotic multiscale systems is how the fast dynamics affects chaos at the slow variables, and, therefore, impacts uncertainty and predictability of the slow dynamics. Here we demonstrate that the linear slow-fast coupling with the total energy conservation prop...

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Science.gov (United States)

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Science.gov (United States)

Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

2018-04-01

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

Electromagnetic radiation damping of charges in external gravitational fields (weak field, slow motion approximation). [Harmonic coordinates, weak field slow-motion approximation, Green function

Energy Technology Data Exchange (ETDEWEB)

Rudolph, E [Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (F.R. Germany)

1975-01-01

As a model for gravitational radiation damping of a planet the electromagnetic radiation damping of an extended charged body moving in an external gravitational field is calculated in harmonic coordinates using a weak field, slowing-motion approximation. Special attention is paid to the case where this gravitational field is a weak Schwarzschild field. Using Green's function methods for this purpose it is shown that in a slow-motion approximation there is a strange connection between the tail part and the sharp part: radiation reaction terms of the tail part can cancel corresponding terms of the sharp part. Due to this cancelling mechanism the lowest order electromagnetic radiation damping force in an external gravitational field in harmonic coordinates remains the flat space Abraham Lorentz force. It is demonstrated in this simplified model that a naive slow-motion approximation may easily lead to divergent higher order terms. It is shown that this difficulty does not arise up to the considered order.

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

Science.gov (United States)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

Robustness of holonomic quantum gates

International Nuclear Information System (INIS)

Solinas, P.; Zanardi, P.; Zanghi, N.

2005-01-01

Full text: If the driving field fluctuates during the quantum evolution this produces errors in the applied operator. The holonomic (and geometrical) quantum gates are believed to be robust against some kind of noise. Because of the geometrical dependence of the holonomic operators can be robust against this kind of noise; in fact if the fluctuations are fast enough they cancel out leaving the final operator unchanged. I present the numerical studies of holonomic quantum gates subject to this parametric noise, the fidelity of the noise and ideal evolution is calculated for different noise correlation times. The holonomic quantum gates seem robust not only for fast fluctuating fields but also for slow fluctuating fields. These results can be explained as due to the geometrical feature of the holonomic operator: for fast fluctuating fields the fluctuations are canceled out, for slow fluctuating fields the fluctuations do not perturb the loop in the parameter space. (author)

Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

Science.gov (United States)

Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

2017-11-01

Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

Scheme for implementing N-qubit controlled phase gate of photons assisted by quantum-dot-microcavity coupled system: optimal probability of success

International Nuclear Information System (INIS)

Cui, Wen-Xue; Hu, Shi; Wang, Hong-Fu; Zhu, Ai-Dong; Zhang, Shou

2015-01-01

The direct implementation of multiqubit controlled phase gate of photons is appealing and important for reducing the complexity of the physical realization of linear-optics-based practical quantum computer and quantum algorithms. In this letter we propose a nondestructive scheme for implementing an N-qubit controlled phase gate of photons with a high success probability. The gate can be directly implemented with the self-designed quantum encoder circuits, which are probabilistic optical quantum entangler devices and can be achieved using linear optical elements, single-photon superposition state, and quantum dot coupled to optical microcavity. The calculated results indicate that both the success probabilities of the quantum encoder circuit and the N-qubit controlled phase gate in our scheme are higher than those in the previous schemes. We also consider the effects of the side leakage and cavity loss on the success probability and the fidelity of the quantum encoder circuit for a realistic quantum-dot-microcavity coupled system. (letter)

High-speed two-frame gated camera for parameters measurement of Dragon-Ⅰ LIA

International Nuclear Information System (INIS)

Jiang Xiaoguo; Wang Yuan; Zhang Kaizhi; Shi Jinshui; Deng Jianjun; Li Jin

2012-01-01

The time-resolved measurement system which can work at very high speed is necessary in electron beam parameter diagnosis for Dragon-Ⅰ linear induction accelerator (LIA). A two-frame gated camera system has been developed and put into operation. The camera system adopts the optical principle of splitting the imaging light beam into two parts in the imaging space of a lens with long focus length. It includes lens coupled gated image intensifier, CCD camera, high speed shutter trigger device based on large scale field programmable gate array. The minimum exposure time for each image is about 3 ns, and the interval time between two images can be adjusted with a step of about 0.5 ns. The exposure time and the interval time can be independently adjusted and can reach about 1 s. The camera system features good linearity, good response uniformity, equivalent background illumination (EBI) as low as about 5 electrons per pixel per second, large adjustment range of sensitivity, and excel- lent flexibility and adaptability in applications. The camera system can capture two frame images at one time with the image size of 1024 x 1024. It meets the requirements of measurement for Dragon-Ⅰ LIA. (authors)

Implementation of a two-qubit controlled-rotation gate based on unconventional geometric phase with a constant gating time

International Nuclear Information System (INIS)

Yabu-uti, B.F.C.; Roversi, J.A.

2011-01-01

We propose an alternative scheme to implement a two-qubit controlled-R (rotation) gate in the hybrid atom-CCA (coupled cavities array) system. Our scheme results in a constant gating time and, with an adjustable qubit-bus coupling (atom-resonator), one can specify a particular rotation R on the target qubit. We believe that this proposal may open promising perspectives for networking quantum information processors and implementing distributed and scalable quantum computation. -- Highlights: → We propose an alternative two-qubit controlled-rotation gate implementation. → Our gate is realized in a constant gating time for any rotation. → A particular rotation on the target qubit can be specified by an adjustable qubit-bus coupling. → Our proposal may open promising perspectives for implementing distributed and scalable quantum computation.

Strong coupling electrostatics for randomly charged surfaces: antifragility and effective interactions.

Science.gov (United States)

Ghodrat, Malihe; Naji, Ali; Komaie-Moghaddam, Haniyeh; Podgornik, Rudolf

2015-05-07

We study the effective interaction mediated by strongly coupled Coulomb fluids between dielectric surfaces carrying quenched, random monopolar charges with equal mean and variance, both when the Coulomb fluid consists only of mobile multivalent counterions and when it consists of an asymmetric ionic mixture containing multivalent and monovalent (salt) ions in equilibrium with an aqueous bulk reservoir. We analyze the consequences that follow from the interplay between surface charge disorder, dielectric and salt image effects, and the strong electrostatic coupling that results from multivalent counterions on the distribution of these ions and the effective interaction pressure they mediate between the surfaces. In a dielectrically homogeneous system, we show that the multivalent counterions are attracted towards the surfaces with a singular, disorder-induced potential that diverges logarithmically on approach to the surfaces, creating a singular but integrable counterion density profile that exhibits an algebraic divergence at the surfaces with an exponent that depends on the surface charge (disorder) variance. This effect drives the system towards a state of lower thermal 'disorder', one that can be described by a renormalized temperature, exhibiting thus a remarkable antifragility. In the presence of an interfacial dielectric discontinuity, the singular behavior of counterion density at the surfaces is removed but multivalent counterions are still accumulated much more strongly close to randomly charged surfaces as compared with uniformly charged ones. The interaction pressure acting on the surfaces displays in general a highly non-monotonic behavior as a function of the inter-surface separation with a prominent regime of attraction at small to intermediate separations. This attraction is caused directly by the combined effects from charge disorder and strong coupling electrostatics of multivalent counterions, which dominate the surface-surface repulsion due to

Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

Science.gov (United States)

Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

2011-10-10

We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

Characteristics of charge coupled devices over X-ray spectral band

Energy Technology Data Exchange (ETDEWEB)

Mishenskij, V O; Volkov, G S; Zajtsev, V I; Zazhivikhin, V V [Troitsk Institute for Thermonuclear and Innovation Investigations (Russian Federation)

1997-12-31

The results of theoretical and experimental investigation of the sensitivity and spatial resolution of charge coupled devices (CCD) influenced by X-ray quanta are reported. Both a calculation model of the interaction process between the X-ray radiation and the CCD-structure and experimental results of investigation of the CCD characteristics are presented. The theoretical model of interaction between X-ray radiation and CCD is suggested. In accordance with the model, the calculations of CCD sensitivity and spatial resolution, depending on the X-ray energy, are performed. The results of comparison of the calculated and experimental data obtained for linear CCD (LCCD) are presented. The CCD has a maximum sensitivity of approx. (1-2.5) . 10{sup 7} V.cm{sup 2}/J for quanta of energies of 0.5-8 keV. The CCD spatial resolution varies from 15-20 {mu}m (CCD gate size) for quanta of energies less then 4 keV and deteriorates up to 150 {mu}m for harder radiation (20-50 keV). CCD usage as space-resolving detectors for high-power installation diagnostics is presented. Other fields of CCD application for X-ray detection are discussed. Advantages of CCD in comparison with the traditional X-ray films is discussed from this point of view. (author). 4 figs., 3 refs.

Pulse sequences for suppressing leakage in single-qubit gate operations

Science.gov (United States)

Ghosh, Joydip; Coppersmith, S. N.; Friesen, Mark

2017-06-01

Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubit embedded in a three-level system. As an example, we apply our scheme to the recently proposed charge quadrupole (CQ) qubit for quantum dots. These results provide a solution to a key challenge for fault-tolerant quantum computing with solid-state elements.

Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

Science.gov (United States)

Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

2017-11-27

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

Dynamically tunable slow light based on plasmon induced transparency in disk resonators coupled MDM waveguide system

International Nuclear Information System (INIS)

Han, Xu; Wang, Tao; Liu, Bo; He, Yu; Tang, Jian; Li, Xiaoming

2015-01-01

Ultrafast and low-power dynamically tunable single channel and multichannel slow light based on plasmon induced transparencies (PITs) in disk resonators coupled to a metal-dielectric-metal (MDM) waveguide system with a nonlinear optical Kerr medium is investigated both numerically and analytically. A coupled-mode theory (CMT) is introduced to analyze this dynamically tunable single channel slow light structure. Multichannel slow light is realized in this plasmonic waveguide structure based on a bright–dark mode coupling mechanism. In order to reduce the pump intensity and obtain ultrafast response time, the traditional nonlinear Kerr material is replaced by monolayer graphene. It is found that the magnitude of the single PIT window can be controlled between 0.08 and 0.48, while the corresponding group index is controlled between 14.5 and 2.0 by dynamically decreasing pump intensity from 11.7 to 4.4 MW cm −2 . Moreover, the phase shift multiplication effect is found in this structure. This work paves a new way towards the realization of highly integrated optical circuits and networks, especially for wavelength-selective, all-optical storage and nonlinear devices. (paper)

A mechanism for acetylcholine receptor gating based on structure, coupling, phi, and flip.

Science.gov (United States)

Gupta, Shaweta; Chakraborty, Srirupa; Vij, Ridhima; Auerbach, Anthony

2017-01-01

Nicotinic acetylcholine receptors are allosteric proteins that generate membrane currents by isomerizing ("gating") between resting and active conformations under the influence of neurotransmitters. Here, to explore the mechanisms that link the transmitter-binding sites (TBSs) with the distant gate, we use mutant cycle analyses to measure coupling between residue pairs, phi value analyses to sequence domain rearrangements, and current simulations to reproduce a microsecond shut component ("flip") apparent in single-channel recordings. Significant interactions between amino acids separated by >15 Å are rare; an exception is between the αM2-M3 linkers and the TBSs that are ∼30 Å apart. Linker residues also make significant, local interactions within and between subunits. Phi value analyses indicate that without agonists, the linker is the first region in the protein to reach the gating transition state. Together, the phi pattern and flip component suggest that a complete, resting↔active allosteric transition involves passage through four brief intermediate states, with brief shut events arising from sojourns in all or a subset. We derive energy landscapes for gating with and without agonists, and propose a structure-based model in which resting→active starts with spontaneous rearrangements of the M2-M3 linkers and TBSs. These conformational changes stabilize a twisted extracellular domain to promote transmembrane helix tilting, gate dilation, and the formation of a "bubble" that collapses to initiate ion conduction. The energy landscapes suggest that twisting is the most energetically unfavorable step in the resting→active conformational change and that the rate-limiting step in the reverse process is bubble formation. © 2017 Gupta et al.

Columnar discharge mode between parallel dielectric barrier electrodes in atmospheric pressure helium

Energy Technology Data Exchange (ETDEWEB)

Hao, Yanpeng; Zheng, Bin; Liu, Yaoge [School of Electric Power, South China University of Technology, Guangzhou 510640 (China)

2014-01-15

Using a fast-gated intensified charge-coupled device, end- and side-view photographs were taken of columnar discharge between parallel dielectric barrier electrodes in atmospheric pressure helium. Based on three-dimensional images generated from end-view photographs, the number of discharge columns increased, whereas the diameter of each column decreased as the applied voltage was increased. Side-view photographs indicate that columnar discharges exhibited a mode transition ranging from Townsend to glow discharges generated by the same discharge physics as atmospheric pressure glow discharge.

Monte-Carlo simulation of spatial resolution of an image intensifier in a saturation mode

Science.gov (United States)

Xie, Yuntao; Wang, Xi; Zhang, Yujun; Sun, Xiaoquan

2018-04-01

In order to investigate the spatial resolution of an image intensifier which is irradiated by high-energy pulsed laser, a three-dimensional electron avalanche model was built and the cascade process of the electrons was numerically simulated. The influence of positive wall charges, due to the failure of replenishing charges extracted from the channel during the avalanche, was considered by calculating its static electric field through particle-in-cell (PIC) method. By tracing the trajectory of electrons throughout the image intensifier, the energy of the electrons at the output of the micro channel plate and the electron distribution at the phosphor screen are numerically calculated. The simulated energy distribution of output electrons are in good agreement with experimental data of previous studies. In addition, the FWHM extensions of the electron spot at phosphor screen as a function of the number of incident electrons are calculated. The results demonstrate that the spot size increases significantly with the increase in the number of incident electrons. Furthermore, we got the MTFs of the image intensifier by Fourier transform of a point spread function at phosphor screen. Comparison between the MTFs in our model and the MTFs by analytic method shows that spatial resolution of the image intensifier decreases significantly as the number of incident electrons increases, and it is particularly obvious when incident electron number greater than 100.

[A capillary blood flow velocity detection system based on linear array charge-coupled devices].

Science.gov (United States)

Zhou, Houming; Wang, Ruofeng; Dang, Qi; Yang, Li; Wang, Xiang

2017-12-01

In order to detect the flow characteristics of blood samples in the capillary, this paper introduces a blood flow velocity measurement system based on field-programmable gate array (FPGA), linear charge-coupled devices (CCD) and personal computer (PC) software structure. Based on the analysis of the TCD1703C and AD9826 device data sheets, Verilog HDL hardware description language was used to design and simulate the driver. Image signal acquisition and the extraction of the real-time edge information of the blood sample were carried out synchronously in the FPGA. Then a series of discrete displacement were performed in a differential operation to scan each of the blood samples displacement, so that the sample flow rate could be obtained. Finally, the feasibility of the blood flow velocity detection system was verified by simulation and debugging. After drawing the flow velocity curve and analyzing the velocity characteristics, the significance of measuring blood flow velocity is analyzed. The results show that the measurement of the system is less time-consuming and less complex than other flow rate monitoring schemes.

Self-consistent coupling of atomic orbitals to a moving charge

International Nuclear Information System (INIS)

Da Costa, H.F.M.; Micha, D.A.

1994-01-01

The authors describe the time evolution of hydrogenic orbitals perturbed by a moving charge. Starting with the equation for an atom interacting with a charge, the authors use an eikonal representation of the total wave-function, followed by an eikonal approximation, to derive coupled differential equations for the temporal change of the orbitals and the charge's trajectory. The orbitals are represented by functions with complex exponents changing with time, describing electronic density and flux changes. For each orbital, they solve a set of six coupled differential equations; two of them are derived with a time-dependent variational procedure for the real and imaginary parts of the exponents, and the other four are the Hamilton equations of the positions and momenta of the moving charge. The molecular potentials are derived from the exact expressions for the electronic energies. Results of calculations for 1s and 2s orbitals show large variation of the real exponent parts over time, with respect to asymptotic values, and that imaginary parts remain small

Electrical control of charged carriers and excitons in atomically thin materials

Science.gov (United States)

Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

2018-02-01

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

Science.gov (United States)

Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

2012-06-06

Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Transition from direct to inverted charge transport Marcus regions in molecular junctions via molecular orbital gating

Science.gov (United States)

Yuan, Li; Wang, Lejia; Garrigues, Alvar R.; Jiang, Li; Annadata, Harshini Venkata; Anguera Antonana, Marta; Barco, Enrique; Nijhuis, Christian A.

2018-04-01

Solid-state molecular tunnel junctions are often assumed to operate in the Landauer regime, which describes essentially activationless coherent tunnelling processes. In solution, on the other hand, charge transfer is described by Marcus theory, which accounts for thermally activated processes. In practice, however, thermally activated transport phenomena are frequently observed also in solid-state molecular junctions but remain poorly understood. Here, we show experimentally the transition from the Marcus to the inverted Marcus region in a solid-state molecular tunnel junction by means of intra-molecular orbital gating that can be tuned via the chemical structure of the molecule and applied bias. In the inverted Marcus region, charge transport is incoherent, yet virtually independent of temperature. Our experimental results fit well to a theoretical model that combines Landauer and Marcus theories and may have implications for the interpretation of temperature-dependent charge transport measurements in molecular junctions.

Spin-coupled charge dynamics in layered manganite crystals

CERN Document Server

Tokura, Y; Ishikawa, T

1998-01-01

Anisotropic charge dynamics has been investigated for single crystals of layered manganites, La sub 2 sub - sub 2 sub x Sr sub 1 sub + sub 2 sub x Mn sub 2 O sub 7 (0.3<=X<=0.5). Remarkable variations in the magnetic structure and in the charge-transport properties are observed by changing the doping level x . A crystal with x = 0.3 behaves like a 2-dimensional ferromagnetic metal in the temperature region between approx 90 K and approx 270 K and shows an interplane tunneling magnetoresistance at lower temperatures which is sensitive to the interplane magnetic coupling between the adjacent MnO sub 2 bilayers. Optical probing of these layered manganites has also clarified the highly anisotropic and incoherent charge dynamics.

Coupling between slow and fast degrees of freedom in systems with complex spectra: Driven systems

International Nuclear Information System (INIS)

Bulgac, A.; Dang, G.D.; Kusnezov, D.

1995-01-01

We consider many-body systems which display slow modes and have complex spectra of intrinsic states, as atomic nuclei, atomic clusters, deformable cavities, and so forth. The effects of the coupling between the intrinsic and the slow degrees of freedom is analyzed, by assuming random matrix properties for the intrinsic degrees of freedom and the fact that the time evolution of the slow degree of freedom modifies the intrinsic configuration of the system. By neglecting the reaction of the intrinsic degrees of freedom on the slow modes, we derive evolution equations for intrinsic state population probabilities, the average excitation energy, and their fluctuations. These evolution equations are characterized by strong memory effects, and only in the long time limit does the dynamics become Markovian. Copyright copyright 1995 Academic Press, Inc

Magnetoelectric coupling of a magnetoelectric flux gate sensor in vibration noise circumstance

Directory of Open Access Journals (Sweden)

Zhaoqiang Chu

2018-01-01

Full Text Available A magnetoelectric (ME flux gate sensor (MEFGS consisting of piezoelectric PMN-PT single crystals and ferromagnetic amorphous alloy ribbon in a self-differential configuration is featured with the ability of weak magnetic anomaly detection. Here, we further investigated its ME coupling and magnetic field detection performance in vibration noise circumstance, including constant frequency, impact, and random vibration noise. Experimental results show that the ME coupling coefficient of MEFGS is as high as 5700 V/cm*Oe at resonant frequency, which is several orders magnitude higher than previously reported differential ME sensors. It was also found that under constant and impact vibration noise circumstance, the noise reduction and attenuation factor of MEFGS are over 17 and 85.7%, respectively. This work is important for practical application of MEFGS in real environment.

Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films.

Science.gov (United States)

Eblen-Zayas, M; Bhattacharya, A; Staley, N E; Kobrinskii, A L; Goldman, A M

2005-01-28

Ultrathin La(0.8)Ca(0.2)MnO(3) films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.

Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

DEFF Research Database (Denmark)

Malinowski, Filip

This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradien...

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

International Nuclear Information System (INIS)

Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

2008-01-01

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

A gateless charge integrator for Borexino energy measurement

International Nuclear Information System (INIS)

Lagomarsino, V.; Testera, G.

1999-01-01

A gateless charge integrator designed for the energy measurement in the Borexino experiment is described and the results of various tests performed on prototypes are shown. The circuit integrates always its input taking advantage of the AC coupling to the photomultipliers that equalizes to zero the charge associated with each event signal. A double sampling of the integrator output allows to perform a charge measurement in principle without dead time, avoiding the use of gate signals and baseline restoration networks and permitting a precise detection of the fast correlated events (delayed coincidences due to the decay of a nuclide producing a daughter having a lifetime in the tens of ns time range). The precision of the charge measurement is discussed together with the performances of the front end Borexino board where the integrator is mounted

Two-Centre Close-Coupling method in charge transfer

Directory of Open Access Journals (Sweden)

Reza Bagheri

2017-09-01

Full Text Available In the present work, the transition matrix elements as well as differential and total scattering cross-sections for positronium formation in Positron-Hydrogen atom collision and hydrogen formation in Positronium-Hydrogen ion collision, through the charge transfer channel by Two-Centre Close-Coupling method up to a first order approximation have been calculated. The charge transfer collision is assumed to be a three-body reaction, while the projectile is a plane wave. Additionally, the hydrogen and positronium atoms are assumed, initially, to be in their ground states. For the case of charge transfer in the scattering of positron by hydrogen atoms, the differential cross sections are plotted for the energy range of 50eV to 10keV, where the Thomas peak is clearly observable. Finally, the total scattering cross-section for the charge transfer in the collision of Positron-Hydrogen and Positronium-Hydrogen ion are plotted as a function of projectile energies and compared with other methods in the literature.

200 ps FWHM and 100 MHz repetition rate ultrafast gated camera for optical medical functional imaging

Science.gov (United States)

Uhring, Wilfried; Poulet, Patrick; Hanselmann, Walter; Glazenborg, René; Zint, Virginie; Nouizi, Farouk; Dubois, Benoit; Hirschi, Werner

2012-04-01

The paper describes the realization of a complete optical imaging device to clinical applications like brain functional imaging by time-resolved, spectroscopic diffuse optical tomography. The entire instrument is assembled in a unique setup that includes a light source, an ultrafast time-gated intensified camera and all the electronic control units. The light source is composed of four near infrared laser diodes driven by a nanosecond electrical pulse generator working in a sequential mode at a repetition rate of 100 MHz. The resulting light pulses, at four wavelengths, are less than 80 ps FWHM. They are injected in a four-furcated optical fiber ended with a frontal light distributor to obtain a uniform illumination spot directed towards the head of the patient. Photons back-scattered by the subject are detected by the intensified CCD camera; there are resolved according to their time of flight inside the head. The very core of the intensified camera system is the image intensifier tube and its associated electrical pulse generator. The ultrafast generator produces 50 V pulses, at a repetition rate of 100 MHz and a width corresponding to the 200 ps requested gate. The photocathode and the Micro-Channel-Plate of the intensifier have been specially designed to enhance the electromagnetic wave propagation and reduce the power loss and heat that are prejudicial to the quality of the image. The whole instrumentation system is controlled by an FPGA based module. The timing of the light pulses and the photocathode gating is precisely adjustable with a step of 9 ps. All the acquisition parameters are configurable via software through an USB plug and the image data are transferred to a PC via an Ethernet link. The compactness of the device makes it a perfect device for bedside clinical applications.

Correlation-induced suppression of decoherence in capacitively coupled Cooper-pair boxes

Science.gov (United States)

Hu, Xuedong; You, J. Q.; Nori, Franco

2005-03-01

Charge fluctuations from gate bias and background traps severely limit the performance of a charge qubit in a Cooper-pair box (CPB). Here we discuss an encoding approachootnotetextJ.Q. You, X.Hu, and F. Nori, cond-mat/0407423. to control the decoherence effects of these charge fluctuations using two strongly capacitively coupled CPBs. This coupled-box system has a low-decoherence subspace of two states, for which we calculate the dephasing and relaxation rates using a master equation approach. Our results show that the inter-box Coulomb correlation can significantly suppress decoherence of this two-level system by reducing the strength of the system-environment interaction, making it a promising candidate as a logical qubit, encoded using two CPBs.

Automatically closing swing gate closure assembly

Science.gov (United States)

Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

1988-01-01

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Quantum gate decomposition algorithms.

Energy Technology Data Exchange (ETDEWEB)

Slepoy, Alexander

2006-07-01

Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

Science.gov (United States)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

Na(3p left-arrow 3s) excitation by impact of slow multiply charged ions

International Nuclear Information System (INIS)

Horvath, G.; Schweinzer, J.; Winter, H.; Aumayr, F.

1996-01-01

We present a systematic experimental and theoretical study of Na(3p left-arrow 3s) excitation by slow (v NaI with projectile ion charge state q is investigated. Due to the dominance of the competing electron capture channels at low collision energies E, the excitation cross sections deviate significantly from a commonly applied σ/q=f(E/q) cross-section scaling relation. copyright 1996 The American Physical Society

Voltage-sensing domain of voltage-gated proton channel Hv1 shares mechanism of block with pore domains.

Science.gov (United States)

Hong, Liang; Pathak, Medha M; Kim, Iris H; Ta, Dennis; Tombola, Francesco

2013-01-23

Voltage-gated sodium, potassium, and calcium channels are made of a pore domain (PD) controlled by four voltage-sensing domains (VSDs). The PD contains the ion permeation pathway and the activation gate located on the intracellular side of the membrane. A large number of small molecules are known to inhibit the PD by acting as open channel blockers. The voltage-gated proton channel Hv1 is made of two VSDs and lacks the PD. The location of the activation gate in the VSD is unknown and open channel blockers for VSDs have not yet been identified. Here, we describe a class of small molecules which act as open channel blockers on the Hv1 VSD and find that a highly conserved phenylalanine in the charge transfer center of the VSD plays a key role in blocker binding. We then use one of the blockers to show that Hv1 contains two intracellular and allosterically coupled gates. Copyright © 2013 Elsevier Inc. All rights reserved.

Optimization design of wireless charging system for autonomous robots based on magnetic resonance coupling

Directory of Open Access Journals (Sweden)

Junhua Wang

2018-05-01

Full Text Available Wireless charging is the key technology to realize real autonomy of mobile robots. As the core part of wireless power transfer system, coupling mechanism including coupling coils and compensation topology is analyzed and optimized through simulations, to achieve stable and practical wireless charging suitable for ordinary robots. Multi-layer coil structure, especially double-layer coil is explored and selected to greatly enhance coupling performance, while shape of ferrite shielding goes through distributed optimization to guarantee coil fault tolerance and cost effectiveness. On the basis of optimized coils, primary compensation topology is analyzed to adopt composite LCL compensation, to stabilize operations of the primary side under variations of mutual inductance. Experimental results show the optimized system does make sense for wireless charging application for robots based on magnetic resonance coupling, to realize long-term autonomy of robots.

Optimization design of wireless charging system for autonomous robots based on magnetic resonance coupling

Science.gov (United States)

Wang, Junhua; Hu, Meilin; Cai, Changsong; Lin, Zhongzheng; Li, Liang; Fang, Zhijian

2018-05-01

Wireless charging is the key technology to realize real autonomy of mobile robots. As the core part of wireless power transfer system, coupling mechanism including coupling coils and compensation topology is analyzed and optimized through simulations, to achieve stable and practical wireless charging suitable for ordinary robots. Multi-layer coil structure, especially double-layer coil is explored and selected to greatly enhance coupling performance, while shape of ferrite shielding goes through distributed optimization to guarantee coil fault tolerance and cost effectiveness. On the basis of optimized coils, primary compensation topology is analyzed to adopt composite LCL compensation, to stabilize operations of the primary side under variations of mutual inductance. Experimental results show the optimized system does make sense for wireless charging application for robots based on magnetic resonance coupling, to realize long-term autonomy of robots.

Anisotropic inflation from charged scalar fields

International Nuclear Information System (INIS)

Emami, Razieh; Firouzjahi, Hassan; Movahed, S.M. Sadegh; Zarei, Moslem

2011-01-01

We consider models of inflation with U(1) gauge fields and charged scalar fields including symmetry breaking potential, chaotic inflation and hybrid inflation. We show that there exist attractor solutions where the anisotropies produced during inflation becomes comparable to the slow-roll parameters. In the models where the inflaton field is a charged scalar field the gauge field becomes highly oscillatory at the end of inflation ending inflation quickly. Furthermore, in charged hybrid inflation the onset of waterfall phase transition at the end of inflation is affected significantly by the evolution of the background gauge field. Rapid oscillations of the gauge field and its coupling to inflaton can have interesting effects on preheating and non-Gaussianities

Microcomputer based test system for charge coupled devices

International Nuclear Information System (INIS)

Sidman, S.

1981-02-01

A microcomputer based system for testing analog charge coupled integrated circuits has been developed. It measures device performance for three parameters: dynamic range, baseline shift due to leakage current, and transfer efficiency. A companion board tester has also been developed. The software consists of a collection of BASIC and assembly language routines developed on the test system microcomputer

Phenomenology of enhanced light quark Yukawa couplings and the W{sup ±}h charge asymmetry

Energy Technology Data Exchange (ETDEWEB)

Yu, Felix [PRISMA Cluster of Excellence & Mainz Institute for Theoretical Physics,Johannes Gutenberg University, Mainz, 55099 (Germany)

2017-02-15

I propose the measurement of the W{sup ±}h charge asymmetry as a consistency test for the Standard Model (SM) Higgs, which is sensitive to enhanced Yukawa couplings of the first and second generation quarks. I present a collider analysis for the charge asymmetry in the same-sign lepton final state, pp→W{sup ±}h→(ℓ{sup ±}ν)(ℓ{sup ±}νjj), aimed at discovery significance for the SM W{sup ±}h production mode in each charge channel with 300 fb{sup −1} of 14 TeV LHC data. Using this decay mode, I estimate the statistical precision on the charge asymmetry should reach 0.4% with 3 ab{sup −1} luminosity, enabling a strong consistency test of the SM Higgs hypothesis. I also discuss direct and indirect constraints on light quark Yukawa couplings from direct and indirect probes of the Higgs width as well as Tevatron and Large Hadron Collider Higgs data. While the main effect from enhanced light quark Yukawa couplings is a rapid increase in the total Higgs width, such effects could be mitigated in a global fit to Higgs couplings, leaving the W{sup ±}h charge asymmetry as a novel signature to test directly the Higgs couplings to light quarks.

Coupled slow and fast surface dynamics in an electrocatalytic oscillator: Model and simulations

International Nuclear Information System (INIS)

Nascimento, Melke A.; Nagao, Raphael; Eiswirth, Markus; Varela, Hamilton

2014-01-01

The co-existence of disparate time scales is pervasive in many systems. In particular for surface reactions, it has been shown that the long-term evolution of the core oscillator is decisively influenced by slow surface changes, such as progressing deactivation. Here we present an in-depth numerical investigation of the coupled slow and fast surface dynamics in an electrocatalytic oscillator. The model consists of four nonlinear coupled ordinary differential equations, investigated over a wide parameter range. Besides the conventional bifurcation analysis, the system was studied by means of high-resolution period and Lyapunov diagrams. It was observed that the bifurcation diagram changes considerably as the irreversible surface poisoning evolves, and the oscillatory region shrinks. The qualitative dynamics changes accordingly and the chaotic oscillations are dramatically suppressed. Nevertheless, periodic cascades are preserved in a confined region of the resistance vs. voltage diagram. Numerical results are compared to experiments published earlier and the latter reinterpreted. Finally, the comprehensive description of the time-evolution in the period and Lyapunov diagrams suggests further experimental studies correlating the evolution of the system's dynamics with changes of the catalyst structure

Features of the use of charge-coupled devices in emission spectroscopic analysis

International Nuclear Information System (INIS)

Livshits, A.M.; Peleznev, A.V.

1993-01-01

Multielement radiation receivers based on linear charge-coupled photodiode devices have become more aand more widely used recently in spectroscopic analysis. The main feature of such receivers is their ability to record not only the intensity of the incident light flux, but also its spatial distribution. This article considers the advantages and disadvantages of charge-coupled devices when used in emission spectroscopic analysis. The main methods nd devices employed for this purpose and discussed here can be divided into four types: photographic photometry, visual styloscopy, quantometry, and successive analysis. 4 refs., 1 fig

Time-resolved spectroscopy using a chopper wheel as a fast shutter

International Nuclear Information System (INIS)

Wang, Shicong; Wendt, Amy E.; Boffard, John B.; Lin, Chun C.

2015-01-01

Widely available, small form-factor, fiber-coupled spectrometers typically have a minimum exposure time measured in milliseconds, and thus cannot be used directly for time-resolved measurements at the microsecond level. Spectroscopy at these faster time scales is typically done with an intensified charge coupled device (CCD) system where the image intensifier acts as a “fast” electronic shutter for the slower CCD array. In this paper, we describe simple modifications to a commercially available chopper wheel system to allow it to be used as a “fast” mechanical shutter for gating a fiber-coupled spectrometer to achieve microsecond-scale time-resolved optical measurements of a periodically pulsed light source. With the chopper wheel synchronized to the pulsing of the light source, the time resolution can be set to a small fraction of the pulse period by using a chopper wheel with narrow slots separated by wide spokes. Different methods of synchronizing the chopper wheel and pulsing of the light sources are explored. The capability of the chopper wheel system is illustrated with time-resolved measurements of pulsed plasmas

Abnormal intraluminal signal within the pulmonary arteries on MR imaging: Differentiation between slow blood flow and thrombus using an ECG-gated; multiphasic: Spin-echo technique

International Nuclear Information System (INIS)

White, R.D.; Higgins, C.B.

1986-01-01

The authors evaluated abnormal MR imaging signal patterns in the pulmonary arteries of 22 patients with pulmonary hypertension (n = 13), pulmonary embolus (n = 4), or both (n = 5). Using multiphasic (five or six phases; 19 patients) or standard (three patients with pulmonary embolus) ECG-gated, double spin-echo techniques, they were able to differentiate between causes of such abnormal signal patterns. The pattern of slow blood flow (abnormal signal in systole with fluctuating distribution during cardiac cycle, and intensity increasing visually from first to second echo) was noted in 89% of patients with pulmonary hypertension alone or in combination with pulmonary embolism, and was characteristic of high systolic pulmonary pressures (12 of 12 patients with pressure > 80 mm Hg, vs. 3 of 5 patients with pressure 55 mm Hg vs. 5 of 7 patients with pressures <55 mm Hg). This pattern was differentiated from that of thrombus (persistent signal with fixed distribution during cardiac cycle, and little to no visible intensity change from first to second echo), which was noted in six of seven proved embolus cases. Thus, gated multiphase MR imaging shows potential for the noninvasive visualization of pulmonary embolus and the differentiation of this entity from the slow blood flow of pulmonary hypertension

On Developing Field-Effect-Tunable Nanofluidic Ion Diodes with Bipolar, Induced-Charge Electrokinetics

Directory of Open Access Journals (Sweden)

Ye Tao

2018-04-01

Full Text Available We introduce herein the induced-charge electrokinetic phenomenon to nanometer fluidic systems; the design of the nanofluidic ion diode for field-effect ionic current control of the nanometer dimension is developed by enhancing internal ion concentration polarization through electrochemical transport of inhomogeneous inducing-counterions resulting from double gate terminals mounted on top of a thin dielectric layer, which covers the nanochannel connected to microfluidic reservoirs on both sides. A mathematical model based on the fully-coupled Poisson-Nernst-Plank-Navier-Stokes equations is developed to study the feasibility of this structural configuration causing effective ionic current rectification. The effect of various physiochemical and geometrical parameters, such as the native surface charge density on the nanochannel sidewalls, the number of gate electrodes (GE, the gate voltage magnitude, and the solution conductivity, permittivity, and thickness of the dielectric coating, as well as the size and position of the GE pair of opposite gate polarity, on the resulted rectification performance of the presented nanoscale ionic device is numerically analyzed by using a commercial software package, COMSOL Multiphysics (version 5.2. Three types of electrohydrodynamic flow, including electroosmosis of 1st kind, induced-charge electroosmosis, and electroosmosis of 2nd kind that were originated by the Coulomb force within three distinct charge layers coexist in the micro/nanofluidic hybrid network and are shown to simultaneously influence the output current flux in a complex manner. The rectification factor of a contrast between the ‘on’ and ‘off’ working states can even exceed one thousand-fold in the case of choosing a suitable combination of several key parameters. Our demonstration of field-effect-tunable nanofluidic ion diodes of double external gate electrodes proves invaluable for the construction of a flexible electrokinetic platform

Scan direction induced charging dynamics and the application for detection of gate to S/D shorts in logic devices

Science.gov (United States)

Lei, Ming; Tian, Qing; Wu, Kevin; Zhao, Yan

2016-03-01

Gate to source/drain (S/D) short is the most common and detrimental failure mechanism for advanced process technology development in Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) device manufacturing. Especially for sub-1Xnm nodes, MOSFET device is more vulnerable to gate-S/D shorts due to the aggressive scaling. The detection of this kind of electrical short defect is always challenging for in-line electron beam inspection (EBI), especially new shorting mechanisms on atomic scale due to new material/process flow implementation. The second challenge comes from the characterization of the shorts including identification of the exact shorting location. In this paper, we demonstrate unique scan direction induced charging dynamics (SDCD) phenomenon which stems from the transistor level response from EBI scan at post metal contact chemical-mechanical planarization (CMP) layers. We found that SDCD effect is exceptionally useful for gate-S/D short induced voltage contrast (VC) defect detection, especially for identification of shorting locations. The unique SDCD effect signatures of gate-S/D shorts can be used as fingerprint for ground true shorting defect detection. Correlation with other characterization methods on the same defective location from EBI scan shows consistent results from various shorting mechanism. A practical work flow to implement the application of SDCD effect for in-line EBI monitor of critical gate-S/D short defects is also proposed, together with examples of successful application use cases which mostly focus on static random-access memory (SRAM) array regions. Although the capability of gate-S/D short detection as well as expected device response is limited to passing transistors and pull-down transistors due to the design restriction from standard 6-cell SRAM structure, SDCD effect is proven to be very effective for gate-S/D short induced VC defect detection as well as yield learning for advanced technology development.

Charge exchange cross sections in slow collisions of Si3+ with Hydrogen atom

Science.gov (United States)

Joseph, Dwayne; Quashie, Edwin; Saha, Bidhan

2011-05-01

In recent years both the experimental and theoretical studies of electron transfer in ion-atom collisions have progressed considerably. Accurate determination of the cross sections and an understanding of the dynamics of the electron-capture process by multiply charged ions from atomic hydrogen over a wide range of projectile velocities are important in various field ranging from fusion plasma to astrophysics. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si3+, with neutrals in the cometary gas vapor. The cross sections are evaluated using the (a) full quantum and (b) semi-classical molecular orbital close coupling (MOCC) methods. Adiabatic potentials and wave functions for relavent singlet and triplet states are generated using the MRDCI structure codes. Details will be presented at the conference. In recent years both the experimental and theoretical studies of electron transfer in ion-atom collisions have progressed considerably. Accurate determination of the cross sections and an understanding of the dynamics of the electron-capture process by multiply charged ions from atomic hydrogen over a wide range of projectile velocities are important in various field ranging from fusion plasma to astrophysics. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si3+, with neutrals in the cometary gas vapor. The cross sections are evaluated using the (a) full quantum and (b) semi-classical molecular orbital close coupling (MOCC) methods. Adiabatic potentials and wave functions for relavent singlet and triplet states are generated using the MRDCI structure codes. Details will be presented at the conference. Work supported by NSF CREST project (grant #0630370).

Ultrafast gated intensifier design for laser fusion x-ray framing applications

International Nuclear Information System (INIS)

Price, R.H.; Wiedwald, J.D.; Kalibjian, R.; Thomas, S.W.; Cook, W.M.

1983-01-01

A major challenge for laser fusion is the study of the symmetry and the hydrodynamic stability of imploding fuel capsules. Streaked x-radiography, in one space and one time dimension, does not provide sufficient information. Two (spatial) dimensional frames of 10 to 100 ps duration are required with good image quality, minimum geometrical distortion (approximately 1%), dynamic range greater than 1000 and greater than 200 x 200 pixels. A gated transmission line imager (TLI) can meet these requirements with frame times between 30 and 100 ps. An instrument of this type is now being developed. Progress on this instrument including theory of operation, ultrafast pulse generation and propagation, component integration, and high resolution phosphor screen development are presented

Fluorescence-tracking of activation gating in human ERG channels reveals rapid S4 movement and slow pore opening.

Directory of Open Access Journals (Sweden)

Zeineb Es-Salah-Lamoureux

2010-05-01

Full Text Available hERG channels are physiologically important ion channels which mediate cardiac repolarization as a result of their unusual gating properties. These are very slow activation compared with other mammalian voltage-gated potassium channels, and extremely rapid inactivation. The mechanism of slow activation is not well understood and is investigated here using fluorescence as a direct measure of S4 movement and pore opening.Tetramethylrhodamine-5-maleimide (TMRM fluorescence at E519 has been used to track S4 voltage sensor movement, and channel opening and closing in hERG channels. Endogenous cysteines (C445 and C449 in the S1-S2 linker bound TMRM, which caused a 10 mV hyperpolarization of the V((1/2 of activation to -27.5+/-2.0 mV, and showed voltage-dependent fluorescence signals. Substitution of S1-S2 linker cysteines with valines allowed unobstructed recording of S3-S4 linker E519C and L520C emission signals. Depolarization of E519C channels caused rapid initial fluorescence quenching, fit with a double Boltzmann relationship, F-V(ON, with V((1/2 (,1 = -37.8+/-1.7 mV, and V((1/2 (,2 = 43.5+/-7.9 mV. The first phase, V((1/2 (,1, was approximately 20 mV negative to the conductance-voltage relationship measured from ionic tail currents (G-V((1/2 = -18.3+/-1.2 mV, and relatively unchanged in a non-inactivating E519C:S620T mutant (V((1/2 = -34.4+/-1.5 mV, suggesting the fast initial fluorescence quenching tracked S4 voltage sensor movement. The second phase of rapid quenching was absent in the S620T mutant. The E519C fluorescence upon repolarization (V((1/2 = -20.6+/-1.2, k = 11.4 mV and L520C quenching during depolarization (V((1/2 = -26.8+/-1.0, k = 13.3 mV matched the respective voltage dependencies of hERG ionic tails, and deactivation time constants from -40 to -110 mV, suggesting they detected pore-S4 rearrangements related to ionic current flow during pore opening and closing.THE DATA INDICATE: 1 that rapid environmental changes occur at the

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

Energy Technology Data Exchange (ETDEWEB)

Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

2008-10-01

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

A surface diffuse scattering model for the mobility of electrons in surface charge coupled devices

International Nuclear Information System (INIS)

Ionescu, M.

1977-01-01

An analytical model for the mobility of electrons in surface charge coupled devices is studied on the basis of the results previously obtained, considering a surface diffuse scattering; the importance of the results obtained for a better understanding of the influence of the fringing field in surface charge coupled devices is discussed. (author)

Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs

International Nuclear Information System (INIS)

Lu, Ming-Pei; Vire, Eric; Montès, Laurent

2015-01-01

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid–semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics. (paper)

The quantic distribution of mobile carriers in a surface charge coupled device

International Nuclear Information System (INIS)

Ionescu, M.

1977-01-01

The quantic distribution of the electrons in a surface charge coupled device (CCD), for a MIS structure with a real insulator (finite difference energy between the conduction bands of the insulator and of the semiconductor) is presented. A fundamental limitation of the charge transfer in a surface CCD is obtained. (author)

A directional fast neutron detector using scintillating fibers and an intensified CCD camera system

International Nuclear Information System (INIS)

Holslin, Daniel; Armstrong, A.W.; Hagan, William; Shreve, David; Smith, Scott

1994-01-01

We have been developing and testing a scintillating fiber detector (SFD) for use as a fast neutron sensor which can discriminate against neutrons entering at angles non-parallel to the fiber axis (''directionality''). The detector/convertor component is a fiber bundle constructed of plastic scintillating fibers each measuring 10 cm long and either 0.3 mm or 0.5 mm in diameter. Extensive Monte Carlo simulations were made to optimize the bundle response to a range of fast neutron energies and to intense fluxes of high energy gamma-rays. The bundle is coupled to a set of gamma-ray insenitive electro-optic intensifiers whose output is viewed by a CCD camera directly coupled to the intensifiers. Two types of CCD cameras were utilized: 1) a standard, interline RS-170 camera with electronic shuttering and 2) a high-speed (up to 850 frame/s) field-transfer camera. Measurements of the neutron detection efficiency and directionality were made using 14 MeV neutrons, and the response to gamma-rays was performed using intense fluxes from radioisotopic sources (up to 20 R/h). Recently, the detector was constructed and tested using a large 10 cm by 10 cm square fiber bundle coupled to a 10 cm diameter GEN I intensifier tube. We present a description of the various detector systems and report the results of experimental tests. ((orig.))

Edge-on gating effect in molecular wires.

Science.gov (United States)

Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

2015-02-11

This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

Improvements in or relating to charge coupled devices

International Nuclear Information System (INIS)

Shannon, J.M.

1980-01-01

This invention relates to charge coupled devices for converting an electromagnetic radiation pattern in a certain wavelength range, particularly but not exclusively an infrared radiation pattern, into electrical signals. A semiconductor layer within this device can be of n-type silicon with a deep level impurity concentration present as proton bombardment induced defects in the crystal lattice or as an ion implanted concentration. (UK)

Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

Science.gov (United States)

Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

2017-09-01

We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

Ion induced charge collection in GaAs MESFETs

International Nuclear Information System (INIS)

Campbell, A.; Knudson, A.; McMorrow, D.; Anderson, W.; Roussos, J.; Espy, S.; Buchner, S.; Kang, K.; Kerns, D.; Kerns, S.

1989-01-01

Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

Science.gov (United States)

Gassaway, J. D.; Causey, W. H., Jr.

1977-01-01

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Spin-polarized current generated by magneto-electrical gating

International Nuclear Information System (INIS)

Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

2012-01-01

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

Electron-phonon and spin-phonon coupling in NaV2O5 : Charge fluctuations effects

NARCIS (Netherlands)

Sherman, E.Ya.; Fischer, M.; Lemmens, P; Loosdrecht, P.H.M. van; Güntherodt, G.

1999-01-01

We show that the asymmetric crystal environment of the V site in the ladder compound NaV2O5 leads to a strong coupling of vanadium 3d electrons to phonons. This coupling causes fluctuations of the charge on the V ions, and favors a transition to a charge-ordered state at low temperatures. In the low

Charge-coupled device area detector for low energy electrons

Czech Academy of Sciences Publication Activity Database

Horáček, Miroslav

2003-01-01

Roč. 74, č. 7 (2003), s. 3379 - 3384 ISSN 0034-6748 R&D Projects: GA ČR GA102/00/P001 Institutional research plan: CEZ:AV0Z2065902 Keywords : low energy electrons * charged-coupled device * detector Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.343, year: 2003

Calculation of coupling to slow and fast waves in the LHRF from phased waveguide arrays

International Nuclear Information System (INIS)

Pinsker, R.I.; Duvall, R.E.; Fortgang, C.M.; Colestock, P.L.

1986-04-01

A previously reported algorithm for solving the problem of coupling electromagnetic energy in the LHRF from a phased array of identical rectangular waveguides to a plane-stratified, magnetized cold plasma is numerically implemented. The resulting computer codes are sufficiently general to allow for an arbitrary number of waveguides with finite dimensions in both poloidal and toroidal directions, and are thus capable of computing coupling to both slow and fast waves in the plasma. Some of the details of the implementation and the extension of the algorithm to allow study of the Fourier spectrum of slow and fast waves launched by the array are discussed. Good agreement is found with previously reported, less general work for the slow wave launching case. The effect of phasing multirow arrays in the poloidal direction is studied, and an asymmetry between phasing 'up' and 'down' is found that persists in the case where the plasma adjacent to the array is uniform. A 4 x 3 array designed to launch fast waves of high phase velocity is studied. By using the optimal poloidal phasing, low reflection coefficients (absolute value of R 2 less than or equal to 20%) are found under some not unrealistic edge plasma conditions, but most of the input power is trapped in the outermost layer of the plasma. Implications of our results for fast wave current drive experiments are discussed

Efficiency of conscious access improves with coupling of slow and fast neural oscillations.

Science.gov (United States)

Nakatani, Chie; Raffone, Antonino; van Leeuwen, Cees

2014-05-01

Global workspace access is considered as a critical factor for the ability to report a visual target. A plausible candidate mechanism for global workspace access is coupling of slow and fast brain activity. We studied coupling in EEG data using cross-frequency phase-amplitude modulation measurement between delta/theta phases and beta/gamma amplitudes from two experimental sessions, held on different days, of a typical attentional blink (AB) task, implying conscious access to targets. As the AB effect improved with practice between sessions, theta-gamma and theta-beta coupling increased generically. Most importantly, practice effects observed in delta-gamma and delta-beta couplings were specific to performance on the AB task. In particular, delta-gamma coupling showed the largest increase in cases of correct target detection in the most challenging AB conditions. All these practice effects were observed in the right temporal region. Given that the delta band is the main frequency of the P3 ERP, which is a marker of global workspace activity for conscious access, and because the gamma band is involved in visual object processing, the current results substantiate the role of phase-amplitude modulation in conscious access to visual target representations.

Charge Exchange in Slow Collisions of O+ with He

Science.gov (United States)

Zhao, L. B.; Joseph, D. C.; Saha, B. C.; Lebermann, H. P.; Funke, P.; Buenker, R. J.

2009-03-01

A comparative study is reported for the charge transfer in collisions of O^+ with He using the fully quantal and semiclassical molecular-orbital close-coupling (MOCC) approaches in the adiabatic representation. The electron capture processes O^+(^4S^o, ^2D^o, ^2P^o) + He -> O(^3P) + He^+ are recalculated. The semiclassical MOCC approach was examined by a detailed comparision of cross sections and transition probabilities from both the fully quantal and semiclassical MOCC approaches. The discrepancies reported previously between the semiclassical and the quantal MOCC cross sections may be attributed due to the insufficient step-size resolution of the semiclassical calculations. Our results are also compared with the experimental cross sections and found good agreements. This work is supported by NSF, CREST program (Grant#0630370).

State memory in solution gated epitaxial graphene

Science.gov (United States)

Butko, A. V.; Butko, V. Y.; Lebedev, S. P.; Lebedev, A. A.; Davydov, V. Y.; Smirnov, A. N.; Eliseyev, I. A.; Dunaevskiy, M. S.; Kumzerov, Y. A.

2018-06-01

We studied electrical transport in transistors fabricated on a surface of high quality epitaxial graphene with density of defects as low as 5·1010 cm-2 and observed quasistatic hysteresis with a time constant in a scale of hours. This constant is in a few orders of magnitude greater than the constant previously reported in CVD graphene. The hysteresis observed here can be described as a shift of ∼+2V of the Dirac point measured during a gate voltage increase from the position of the Dirac point measured during a gate voltage decrease. This hysteresis can be characterized as a nonvolatile quasistatic state memory effect in which the state of the gated graphene is determined by its initial state prior to entering the hysteretic region. Due to this effect the difference in resistance of the gated graphene measured in the hysteretic region at the same applied voltages can be as high as 70%. The observed effect can be explained by assuming that charge carriers in graphene and oppositely charged molecular ions from the solution form quasistable interfacial complexes at the graphene interface. These complexes likely preserve the initial state by preventing charge carriers in graphene from discharging in the hysteretic region.

Quantization effects on the inversion mode of a double gate MOS

Directory of Open Access Journals (Sweden)

Kalyan Mondol

Full Text Available We investigate the quantization effects on the gate capacitance and charge distribution of a double gate MOSFET using a self-consistent solution of Poisson and Schrödinger equations of the industry standard simulation package Silvaco. Quantization effects on the gate C–V are simulated by varying the electron and hole effective masses. We notice that the inversion capacitance value decreases as the effective mass goes below 0.1mo and the shape of the C–V curve changes to step like in the inversion. We also notice that the inversion switches from surface inversion to volume inversion for low effective mass, and the quantization effect (step like shape in C–V and volume inversion in charge profile happen at the same effective mass. Keywords: Double gate MOSFETs, Quantum effects, Energy quantization, Channel inversion, Charge density

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.

Science.gov (United States)

Zhang, Liangliang; Janotti, Anderson; Meng, Andrew C; Tang, Kechao; Van de Walle, Chris G; McIntyre, Paul C

2018-02-14

Layered atomic-layer-deposited and forming-gas-annealed TiO 2 /Al 2 O 3 dielectric stacks, with the Al 2 O 3 layer interposed between the TiO 2 and a p-type germanium substrate, are found to exhibit a significant interface charge dipole that causes a ∼-0.2 V shift of the flat-band voltage and suppresses the leakage current density for gate injection of electrons. These effects can be eliminated by the formation of a trilayer dielectric stack, consistent with the cancellation of one TiO 2 /Al 2 O 3 interface dipole by the addition of another dipole of opposite sign. Density functional theory calculations indicate that the observed interface-dependent properties of TiO 2 /Al 2 O 3 dielectric stacks are consistent in sign and magnitude with the predicted behavior of Al Ti and Ti Al point-defect dipoles produced by local intermixing of the Al 2 O 3 /TiO 2 layers across the interface. Evidence for such intermixing is found in both electrical and physical characterization of the gate stacks.

A common pathway for charge transport through voltage-sensing domains.

Science.gov (United States)

Chanda, Baron; Bezanilla, Francisco

2008-02-07

Voltage-gated ion channels derive their voltage sensitivity from the movement of specific charged residues in response to a change in transmembrane potential. Several studies on mechanisms of voltage sensing in ion channels support the idea that these gating charges move through a well-defined permeation pathway. This gating pathway in a voltage-gated ion channel can also be mutated to transport free cations, including protons. The recent discovery of proton channels with sequence homology to the voltage-sensing domains suggests that evolution has perhaps exploited the same gating pathway to generate a bona fide voltage-dependent proton transporter. Here we will discuss implications of these findings on the mechanisms underlying charge (and ion) transport by voltage-sensing domains.

Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes

International Nuclear Information System (INIS)

Fang, Yun-tuan; Ni, Zhi-yao; Zhu, Na; Zhou, Jun

2016-01-01

We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively. (paper)

Broad self-trapped and slow light bands based on negative refraction and interference of magnetic coupled modes.

Science.gov (United States)

Fang, Yun-Tuan; Ni, Zhi-Yao; Zhu, Na; Zhou, Jun

2016-01-13

We propose a new mechanism to achieve light localization and slow light. Through the study on the coupling of two magnetic surface modes, we find a special convex band that takes on a negative refraction effect. The negative refraction results in an energy flow concellation effect from two degenerated modes on the convex band. The energy flow concellation effect leads to forming of the self-trapped and slow light bands. In the self-trapped band light is localized around the source without reflection wall in the waveguide direction, whereas in the slow light band, light becomes the standing-waves and moving standing-waves at the center and the two sides of the waveguide, respectively.

Processing of poly-Si electrodes for charge-coupled devices

Energy Technology Data Exchange (ETDEWEB)

Sherohman, J.W.; Cook, F.D.

1978-12-06

A technique has been developed to fabricate poly-Si electrodes for charge-coupled devices. By controlling the microstructure of a poly-Si film, an anisotropic etchant was selected to provide essentially uniform electrode width dimensions. The electrode widths have only a 6% variation for the majority of the devices over the area of a 2 inch silicon wafer.

Seismo-Ionospheric Coupling as Intensified EIA Observed by Satellite Electron Density and GPS-TEC Data

Science.gov (United States)

Ryu, K.; Jangsoo, C.; Kim, S. G.; Jeong, K. S.; Parrot, M.; Pulinets, S. A.; Oyama, K. I.

2014-12-01

Examples of intensified EIA features temporally and spatially related to large earthquakes observed by satellites and GPS-TEC are introduced. The precursory, concurrent, and ex-post enhancements of EIA represented by the equatorial electron density, which are thought to be related to the M8.7 Northern Sumatra earthquake of March 2005, the M8.0 Pisco earthquake of August 2007, and the M7.9 Wenchuan Earthquake of 12 May 2008, are shown with space weather condition. Based on the case studies, statistical analysis on the ionospheric electron density data measured by the Detection of Electro-Magnetic Emissions Transmitted from Earthquake Regions satellite (DEMETER) over a period of 2005-2010 was executed in order to investigate the correlation between seismic activity and equatorial plasma density variations. To simplify the analysis, three equatorial regions with frequent earthquakes were selected and then one-dimensional time series analysis between the daily seismic activity indices and the EIA intensity indices were performed for each region with excluding the possible effects from the geomagnetic and solar activity. The statistically significant values of the lagged cross-correlation function, particularly in the region with minimal effects of longitudinal asymmetry, indicate that some of the very large earthquakes with M > 7.0 in the low latitude region can accompany observable seismo-ionospheric coupling phenomena in the form of EIA enhancements, even though the seismic activity is not the most significant driver of the equatorial ionospheric evolution. The physical mechanisms of the seismo-ionospheric coupling to explain the observation and the possibility of earthquake prediction using the EIA intensity variation are discussed.

Contracture Coupling of Slow Striated Muscle in Non-Ionic Solutions and Replacement of Calcium, Sodium, and Potassium

Science.gov (United States)

Irwin, Richard L.; Hein, Manfred M.

1964-01-01

The development of contracture related to changes of ionic environment (ionic contracture coupling) has been studied in the slowly responding fibers of frog skeletal muscle. When deprived of external ions for 30 minutes by use of solutions of sucrose, mannitol, or glucose, the slow skeletal muscle fibers, but not the fast, develop pronounced and easily reversible contractures. Partial replacement of the non-ionic substance with calcium or sodium reduces the development of the contractures but replacement by potassium does not. The concentration of calcium necessary to prevent contracture induced by a non-ionic solution is greater than that needed to maintain relaxation in ionic solutions. To suppress the non-ionic-induced contractures to the same extent as does calcium requires several fold higher concentrations of sodium. Two types of ionic contracture coupling occur in slow type striated muscle fibers: (a) a calcium deprivation type which develops maximally at full physiological concentration of external sodium, shows a flow rate dependency for the calcium-depriving fluid, and is lessened when the sodium concentration is decreased by replacement with sucrose; (b) a sodium deprivation type which occurs maximally without external sodium, is lessened by increasing the sodium concentration, and has no flow rate dependency for ion deprivation. Both types of contracture are largely prevented by the presence of sufficient calcium. There thus seem to be calcium- and sodium-linked processes at work in the ionic contracture coupling of slow striated muscle. PMID:14127603

Thermodynamic coupling between activation and inactivation gating in potassium channels revealed by free energy molecular dynamics simulations.

Science.gov (United States)

Pan, Albert C; Cuello, Luis G; Perozo, Eduardo; Roux, Benoît

2011-12-01

The amount of ionic current flowing through K(+) channels is determined by the interplay between two separate time-dependent processes: activation and inactivation gating. Activation is concerned with the stimulus-dependent opening of the main intracellular gate, whereas inactivation is a spontaneous conformational transition of the selectivity filter toward a nonconductive state occurring on a variety of timescales. A recent analysis of multiple x-ray structures of open and partially open KcsA channels revealed the mechanism by which movements of the inner activation gate, formed by the inner helices from the four subunits of the pore domain, bias the conformational changes at the selectivity filter toward a nonconductive inactivated state. This analysis highlighted the important role of Phe103, a residue located along the inner helix, near the hinge position associated with the opening of the intracellular gate. In the present study, we use free energy perturbation molecular dynamics simulations (FEP/MD) to quantitatively elucidate the thermodynamic basis for the coupling between the intracellular gate and the selectivity filter. The results of the FEP/MD calculations are in good agreement with experiments, and further analysis of the repulsive, van der Waals dispersive, and electrostatic free energy contributions reveals that the energetic basis underlying the absence of inactivation in the F103A mutation in KcsA is the absence of the unfavorable steric interaction occurring with the large Ile100 side chain in a neighboring subunit when the intracellular gate is open and the selectivity filter is in a conductive conformation. Macroscopic current analysis shows that the I100A mutant indeed relieves inactivation in KcsA, but to a lesser extent than the F103A mutant.

A time-gated near-infrared spectroscopic imaging device for clinical applications.

Science.gov (United States)

Poulet, Patrick; Uhring, Wilfried; Hanselmann, Walter; Glazenborg, René; Nouizi, Farouk; Zint, Virginie; Hirschi, Werner

2013-03-01

A time-resolved, spectroscopic, diffuse optical tomography device was assembled for clinical applications like brain functional imaging. The entire instrument lies in a unique setup that includes a light source, an ultrafast time-gated intensified camera and all the electronic control units. The light source is composed of four near infrared laser diodes driven by a nanosecond electrical pulse generator working in a sequential mode at a repetition rate of 100 MHz. The light pulses are less than 80 ps FWHM. They are injected in a four-furcated optical fiber ended with a frontal light distributor to obtain a uniform illumination spot directed towards the head of the patient. Photons back-scattered by the subject are detected by the intensified CCD camera. There are resolved according to their time of flight inside the head. The photocathode is powered by an ultrafast generator producing 50 V pulses, at 100 MHz and a width corresponding to a 200 ps FWHM gate. The intensifier has been specially designed for this application. The whole instrument is controlled by an FPGA based module. All the acquisition parameters are configurable via software through an USB plug and the image data are transferred to a PC via an Ethernet link. The compactness of the device makes it a perfect device for bedside clinical applications. The instrument will be described and characterized. Preliminary data recorded on test samples will be presented.

The construction and evaluation of a prototype system for an image intensifier-based volume computed tomography imager

International Nuclear Information System (INIS)

Ning, R.

1989-01-01

A volumetric reconstruction of a three-dimensional (3-D) object has been at the forefront of exploration in medical applications for a long time. To achieve this goal, a prototype system for an image intensifier(II)-based volume computed tomography (CT) imager has been constructed. This research has been concerned with constructing and evaluating such a prototype system by phantom studies. The prototype system consists of a fixed x-ray tube, a specially designed aluminum filter that will reduce the dynamic range of projection data, an antiscatter grid, a conventional image intensifier optically coupled to a charge-coupled device (CCC) camera, a computer controlled turntable on which phantoms are placed, a digital computer including an A/D converter and a graphic station that displays the reconstructed images. In this study, three different phantoms were used: a vascular phantom, a resolution phantom and a Humanoid reg-sign chest phantom. The direct 3-D reconstruction from the projections was performed using a cone beam algorithm and vascular reconstruction algorithms. The image performance of the system for the direct 3-D reconstruction was evaluated. The spatial resolution limits of the system were estimated through observing the reconstructed images of the resolution phantom. By observing the images reconstructed from the projections, it can be determined that the image performance of the prototype system for a direct 3-D reconstruction is reasonably good and that the vascular reconstruction algorithms work very well. The results also indicate that the 3-D reconstructions obtained with the 11-based volume CT imager have nearly equally good resolution in x, y and z directions and are superior to a conventional CT in the resolution of the z direction

High image quality sub 100 picosecond gated framing camera development

International Nuclear Information System (INIS)

Price, R.H.; Wiedwald, J.D.

1983-01-01

A major challenge for laser fusion is the study of the symmetry and hydrodynamic stability of imploding fuel capsules. Framed x-radiographs of 10-100 ps duration, excellent image quality, minimum geometrical distortion (< 1%), dynamic range greater than 1000, and more than 200 x 200 pixels are required for this application. Recent progress on a gated proximity focused intensifier which meets these requirements is presented

Study and realisation of a double integration charge encoder at VXI standard; Etude et realisation d`un codeur de charge double integration au standard VXI

Energy Technology Data Exchange (ETDEWEB)

Leconte, A

1994-07-01

The 16 channels charge encoder herein described equips the Phoswich scintillators which, associated with photomultiplier tubes, constitutes the first ring of the INDRA Multidetector. This 4 {pi} Multidetector, located at GANIL at Caen, is first presented. In this encoder, two integrations are made, offering a distinction between the fast component of the signal from the detector and the slow one (decreasing times: 2,4 ns and 320ns respectively). This measurement is performed by the integration of each component within an adjustable time-gate. Apart from the two integrations, the encoder realizes the detection of the impulsion with a constant fraction discriminator, the generation of the two gates and a test function. The use of surface mounted components together with the choice of the VXI interconnection standard, also presented in this report, allowed highly integrated electronics. The encoder uses the sliding scale principle. It also includes the electronics for some programmable adjustments, the remote visualisation of important signals and the logic for the conversion. (author). 22 refs.

Intensified coastal development behind nourished beaches

Science.gov (United States)

Armstrong, Scott; Lazarus, Eli; Limber, Patrick; Goldstein, Evan; Thorpe, Curtis; Ballinger, Rhoda

2016-04-01

Population density, housing development, and property values in coastal counties along the U.S. Atlantic and Gulf Coasts continue to rise despite increasing hazard from storm impacts. Since the 1970s, beach nourishment, which involves importing sand to deliberately widen an eroding beach, has been the main strategy in the U.S. for protecting coastal properties from erosion and flooding hazards. Paradoxically, investment in hazard protection may intensify development. Here, we examine the housing stock of all existing shorefront single-family homes in Florida - a microcosm of U.S. coastal hazards and development - to quantitatively compare development in nourishing and non-nourishing towns. We find that nourishing towns now account for more than half of Florida's coastline, and that houses in nourishing towns are larger and more numerous. Even as the mean size of single-family homes nationwide has grown steadily since 1970, Florida's shorefront stock has exceeded the national average by 34%, and in nourishing towns by 45%. This emergent disparity between nourishing and non-nourishing towns in Florida demonstrates a pattern of intensifying coastal risk, and is likely representative of a dominant trend in coastal development more generally. These data lend empirical support to the hypothesis that US coastal development and hazard mitigation through beach nourishment have become dynamically coupled.

X-ray image intensifier photography

International Nuclear Information System (INIS)

Richter, K.; Angerstein, W.; Steinhardt, L.

1980-01-01

The present treatise on X-ray image intensifier photography starts with introductory remarks on the history of X-ray imaging and image intensifiers. In the physical-technological part especially the quality of image and the methods of its measurement are discussed in detail. The relevant equipment such as image intensifier cameras, X-ray television, video recorder and devices of display and evaluation of images are presented as well as problems of radiation doses and radiation protection. Based on 25,000 examinations of the digestive, the biliary and the urinary tract, resp., as well as of the blood vessels the applicability of the X-ray image intensifier photography and its diagnostic value are demonstrated in the medical part of the book

Recent progress in color image intensifier

International Nuclear Information System (INIS)

Nittoh, K.

2010-01-01

A multi-color scintillator based high-sensitive, wide dynamic range and long-life X-ray image intensifier (Ultimage TM ) has been developed. Europium activated Y 2 O 2 S scintillator, emitting red, green and blue wavelength photons of different intensities, is utilized as the output fluorescent screen of the intensifier. By combining this image intensifier with a suitably tuned high sensitive color CCD camera, the sensitivity of the red color component achieved six times higher than that of the conventional image intensifier. Simultaneous emission of a moderate green color and a weak blue color covers different sensitivity regions. This widens the dynamic range by nearly two orders of magnitude. With this image intensifier, it is possible to image complex objects containing various different X-ray transmissions from paper, water or plastic to heavy metals at a time. This color scintillator based image intensifier is widely used in X-ray inspections of various fields. (author)

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-01-01

for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic

Optimizing the Gating System for Steel Castings

Directory of Open Access Journals (Sweden)

Jan Jezierski

2018-04-01

Full Text Available The article presents the attempt to optimize a gating system to produce cast steel castings. It is based on John Campbell’s theory and presents the original results of computer modelling of typical and optimized gating systems for cast steel castings. The current state-of-the-art in cast steel casting foundry was compared with several proposals of optimization. The aim was to find a compromise between the best, theoretically proven gating system version, and a version that would be affordable in industrial conditions. The results show that it is possible to achieve a uniform and slow pouring process even for heavy castings to preserve their internal quality.

Particle-in-cell studies of fast-ion slowing-down rates in cool tenuous magnetized plasma

Science.gov (United States)

Evans, Eugene S.; Cohen, Samuel A.; Welch, Dale R.

2018-04-01

We report on 3D-3V particle-in-cell simulations of fast-ion energy-loss rates in a cold, weakly-magnetized, weakly-coupled plasma where the electron gyroradius, ρe, is comparable to or less than the Debye length, λDe, and the fast-ion velocity exceeds the electron thermal velocity, a regime in which the electron response may be impeded. These simulations use explicit algorithms, spatially resolve ρe and λDe, and temporally resolve the electron cyclotron and plasma frequencies. For mono-energetic dilute fast ions with isotropic velocity distributions, these scaling studies of the slowing-down time, τs, versus fast-ion charge are in agreement with unmagnetized slowing-down theory; with an applied magnetic field, no consistent anisotropy between τs in the cross-field and field-parallel directions could be resolved. Scaling the fast-ion charge is confirmed as a viable way to reduce the required computational time for each simulation. The implications of these slowing down processes are described for one magnetic-confinement fusion concept, the small, advanced-fuel, field-reversed configuration device.

Fault-tolerant quantum computing in the Pauli or Clifford frame with slow error diagnostics

Directory of Open Access Journals (Sweden)

Christopher Chamberland

2018-01-01

Full Text Available We consider the problem of fault-tolerant quantum computation in the presence of slow error diagnostics, either caused by measurement latencies or slow decoding algorithms. Our scheme offers a few improvements over previously existing solutions, for instance it does not require active error correction and results in a reduced error-correction overhead when error diagnostics is much slower than the gate time. In addition, we adapt our protocol to cases where the underlying error correction strategy chooses the optimal correction amongst all Clifford gates instead of the usual Pauli gates. The resulting Clifford frame protocol is of independent interest as it can increase error thresholds and could find applications in other areas of quantum computation.

Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

Science.gov (United States)

Li, L. L.; Partoens, B.; Peeters, F. M.

2018-04-01

By taking account of the electric-field-induced charge screening, a self-consistent calculation within the framework of the tight-binding approach is employed to obtain the electronic band structure of gated multilayer phosphorene and the charge densities on the different phosphorene layers. We find charge density and screening anomalies in single-gated multilayer phosphorene and electron-hole bilayers in dual-gated multilayer phosphorene. Due to the unique puckered lattice structure, both intralayer and interlayer charge screenings are important in gated multilayer phosphorene. We find that the electric-field tuning of the band structure of multilayer phosphorene is distinctively different in the presence and absence of charge screening. For instance, it is shown that the unscreened band gap of multilayer phosphorene decreases dramatically with increasing electric-field strength. However, in the presence of charge screening, the magnitude of this band-gap decrease is significantly reduced and the reduction depends strongly on the number of phosphorene layers. Our theoretical results of the band-gap tuning are compared with recent experiments and good agreement is found.

Gating of Connexin Channels by transjunctional-voltage: Conformations and models of open and closed states.

Science.gov (United States)

Bargiello, Thaddeus A; Oh, Seunghoon; Tang, Qingxiu; Bargiello, Nicholas K; Dowd, Terry L; Kwon, Taekyung

2018-01-01

Voltage is an important physiologic regulator of channels formed by the connexin gene family. Connexins are unique among ion channels in that both plasma membrane inserted hemichannels (undocked hemichannels) and intercellular channels (aggregates of which form gap junctions) have important physiological roles. The hemichannel is the fundamental unit of gap junction voltage-gating. Each hemichannel displays two distinct voltage-gating mechanisms that are primarily sensitive to a voltage gradient formed along the length of the channel pore (the transjunctional voltage) rather than sensitivity to the absolute membrane potential (V m or V i-o ). These transjunctional voltage dependent processes have been termed V j - or fast-gating and loop- or slow-gating. Understanding the mechanism of voltage-gating, defined as the sequence of voltage-driven transitions that connect open and closed states, first and foremost requires atomic resolution models of the end states. Although ion channels formed by connexins were among the first to be characterized structurally by electron microscopy and x-ray diffraction in the early 1980's, subsequent progress has been slow. Much of the current understanding of the structure-function relations of connexin channels is based on two crystal structures of Cx26 gap junction channels. Refinement of crystal structure by all-atom molecular dynamics and incorporation of charge changing protein modifications has resulted in an atomic model of the open state that arguably corresponds to the physiologic open state. Obtaining validated atomic models of voltage-dependent closed states is more challenging, as there are currently no methods to solve protein structure while a stable voltage gradient is applied across the length of an oriented channel. It is widely believed that the best approach to solve the atomic structure of a voltage-gated closed ion channel is to apply different but complementary experimental and computational methods and to use

An advanced Lithium-ion battery optimal charging strategy based on a coupled thermoelectric model

International Nuclear Information System (INIS)

Liu, Kailong; Li, Kang; Yang, Zhile; Zhang, Cheng; Deng, Jing

2017-01-01

Lithium-ion batteries are widely adopted as the power supplies for electric vehicles. A key but challenging issue is to achieve optimal battery charging, while taking into account of various constraints for safe, efficient and reliable operation. In this paper, a triple-objective function is first formulated for battery charging based on a coupled thermoelectric model. An advanced optimal charging strategy is then proposed to develop the optimal constant-current-constant-voltage (CCCV) charge current profile, which gives the best trade-off among three conflicting but important objectives for battery management. To be specific, a coupled thermoelectric battery model is first presented. Then, a specific triple-objective function consisting of three objectives, namely charging time, energy loss, and temperature rise (both the interior and surface), is proposed. Heuristic methods such as Teaching-learning-based-optimization (TLBO) and particle swarm optimization (PSO) are applied to optimize the triple-objective function, and their optimization performances are compared. The impacts of the weights for different terms in the objective function are then assessed. Experimental results show that the proposed optimal charging strategy is capable of offering desirable effective optimal charging current profiles and a proper trade-off among the conflicting objectives. Further, the proposed optimal charging strategy can be easily extended to other battery types.

Wide-field time-resolved luminescence imaging and spectroscopy to decipher obliterated documents in forensic science

Science.gov (United States)

Suzuki, Mototsugu; Akiba, Norimitsu; Kurosawa, Kenji; Kuroki, Kenro; Akao, Yoshinori; Higashikawa, Yoshiyasu

2016-01-01

We applied a wide-field time-resolved luminescence (TRL) method with a pulsed laser and a gated intensified charge coupled device (ICCD) for deciphering obliterated documents for use in forensic science. The TRL method can nondestructively measure the dynamics of luminescence, including fluorescence and phosphorescence lifetimes, which prove to be useful parameters for image detection. First, we measured the TRL spectra of four brands of black porous-tip pen inks on paper to estimate their luminescence lifetimes. Next, we acquired the TRL images of 12 obliterated documents at various delay times and gate times of the ICCD. The obliterated contents were revealed in the TRL images because of the difference in the luminescence lifetimes of the inks. This method requires no pretreatment, is nondestructive, and has the advantage of wide-field imaging, which makes it is easy to control the gate timing. This demonstration proves that TRL imaging and spectroscopy are powerful tools for forensic document examination.

Charge exchange and ionization of atoms in collisions with multicharged ions

International Nuclear Information System (INIS)

Presnyakov, L.P.; Uskov, D.B.

1987-01-01

Single-electron transition in continuous and discrete spectra, induced by A atom and B +2 multicharged ion collision with the charge Z>3 are investigated. A theory of quantum transitions in multilevel systems with ion-atom collisions is considered. Main results on charge exchange in slow (v 0 Z 1/2 ) collisions are presented. For analysis of charge exchange analytical method, being generalization of decay model and of approximation of nonadiabatic coupling of two states, that are included into a developed approach as limiting cases, is developed. The calculation results are compared with the available experimental data

Gate-Driven Pure Spin Current in Graphene

Science.gov (United States)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Incident ion charge state dependence of electron emission during slow multicharged ion-surface interactions

International Nuclear Information System (INIS)

Hughes, I.G.; Zeijlmans van Emmichoven, P.A.; Havener, C.C.; Overbury, S.H.; Robinson, M.T.; Zehner, D.M.; Meyer, F.W.

1992-01-01

Characteristic variations in the total electron yield γ as a function of crystal azimuthal orientation are reported for slow N 2+ , N 5+ and N 6+ ions incident on a Au(011) single crystal, together with measurements of γ as a function of incident ion velocity. Kinetic electron emission is shown to arise predominantly in close collisions between incident ions and target atoms, and potential electron emission is found to be essentially constant within our present velocity range. The incident ion charge state is shown to play no role in kinetic electron emission. Extremely fast neutralization times of the order of 10 - 15 secs are needed to explain the observations

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects.

Science.gov (United States)

Pala, M G; Baltazar, S; Martins, F; Hackens, B; Sellier, H; Ouisse, T; Bayot, V; Huant, S

2009-07-01

We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh-Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov-Bohm effect.

A comparison of charged coupled devices and film sensitivities

International Nuclear Information System (INIS)

Wallick, W.O.; Kenyon, R.G.; Lubatti, H.J.

1977-01-01

The response of a charged coupled device (Fairchild CCD-202) to a Ne light source is studied and compared to the Kodak SO-143 film commonly used for streamer chamber applications. It is found that the CCD-202 cooled to - 10 0 C is considerebly more sensitive than the film. The advantages of using a CCD camera system for streamer chamber and other applications is discussed. (Auth.)

Absorption and radiation of nonminimally coupled scalar field from charged BTZ black hole

Science.gov (United States)

Huang, Lu; Chen, Juhua; Wang, Yongjiu

2018-06-01

In this paper we investigate the absorption and radiation of nonminimally coupled scalar field from the charged BTZ black hole. We find the analytical expressions for the reflection coefficient, the absorption cross section and the decay rate in strong coupling case. We find that the reflection coefficient is directly governed by Hawking temperature TH, scalar wave frequency ω , Bekenstein-Hawking entropy S_{BH}, angular momentum m and coupling constant ξ.

Electrochemically-gated single-molecule electrical devices

International Nuclear Information System (INIS)

Guo, Shaoyin; Artés, Juan Manuel; Díez-Pérez, Ismael

2013-01-01

In the last decade, single-molecule electrical contacts have emerged as a new experimental platform that allows exploring charge transport phenomena in individual molecular blocks. This novel tool has evolved into an essential element within the Molecular Electronics field to understand charge transport processes in hybrid (bio)molecule/electrode interfaces at the nanoscale, and prospect the implementation of active molecular components into functional nanoscale optoelectronic devices. Within this area, three-terminal single-molecule devices have been sought, provided that they are highly desired to achieve full functionality in logic electronic circuits. Despite the latest experimental developments offer consistent methods to bridge a molecule between two electrodes (source and drain in a transistor notation), placing a third electrode (gate) close to the single-molecule electrical contact is still technically challenging. In this vein, electrochemically-gated single-molecule devices have emerged as an experimentally affordable alternative to overcome these technical limitations. In this review, the operating principle of an electrochemically-gated single-molecule device is presented together with the latest experimental methodologies to built them and characterize their charge transport characteristics. Then, an up-to-date comprehensive overview of the most prominent examples will be given, emphasizing on the relationship between the molecular structure and the final device electrical behaviour

Construction of high-dimensional universal quantum logic gates using a Λ system coupled with a whispering-gallery-mode microresonator.

Science.gov (United States)

He, Ling Yan; Wang, Tie-Jun; Wang, Chuan

2016-07-11

High-dimensional quantum system provides a higher capacity of quantum channel, which exhibits potential applications in quantum information processing. However, high-dimensional universal quantum logic gates is difficult to achieve directly with only high-dimensional interaction between two quantum systems and requires a large number of two-dimensional gates to build even a small high-dimensional quantum circuits. In this paper, we propose a scheme to implement a general controlled-flip (CF) gate where the high-dimensional single photon serve as the target qudit and stationary qubits work as the control logic qudit, by employing a three-level Λ-type system coupled with a whispering-gallery-mode microresonator. In our scheme, the required number of interaction times between the photon and solid state system reduce greatly compared with the traditional method which decomposes the high-dimensional Hilbert space into 2-dimensional quantum space, and it is on a shorter temporal scale for the experimental realization. Moreover, we discuss the performance and feasibility of our hybrid CF gate, concluding that it can be easily extended to a 2n-dimensional case and it is feasible with current technology.

Niflumic acid alters gating of HCN2 pacemaker channels by interaction with the outer region of S4 voltage sensing domains.

Science.gov (United States)

Cheng, Lan; Sanguinetti, Michael C

2009-05-01

Niflumic acid, 2-[[3-(trifluoromethyl)phenyl]amino]pyridine-3-carboxylic acid (NFA), is a nonsteroidal anti-inflammatory drug that also blocks or modifies the gating of many ion channels. Here, we investigated the effects of NFA on hyperpolarization-activated cyclic nucleotide-gated cation (HCN) pacemaker channels expressed in X. laevis oocytes using site-directed mutagenesis and the two-electrode voltage-clamp technique. Extracellular NFA acted rapidly and caused a slowing of activation and deactivation and a hyperpolarizing shift in the voltage dependence of HCN2 channel activation (-24.5 +/- 1.2 mV at 1 mM). Slowed channel gating and reduction of current magnitude was marked in oocytes treated with NFA, while clamped at 0 mV but minimal in oocytes clamped at -100 mV, indicating the drug preferentially interacts with channels in the closed state. NFA at 0.1 to 3 mM shifted the half-point for channel activation in a concentration-dependent manner, with an EC(50) of 0.54 +/- 0.068 mM and a predicted maximum shift of -38 mV. NFA at 1 mM also reduced maximum HCN2 conductance by approximately 20%, presumably by direct block of the pore. The rapid onset and state-dependence of NFA-induced changes in channel gating suggests an interaction with the extracellular region of the S4 transmembrane helix, the primary voltage-sensing domain of HCN2. Neutralization (by mutation to Gln) of any three of the outer four basic charged residues in S4, but not single mutations, abrogated the NFA-induced shift in channel activation. We conclude that NFA alters HCN2 gating by interacting with the extracellular end of the S4 voltage sensor domains.

Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

Science.gov (United States)

Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

2014-03-01

The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

Charge correlation measurements of double-sided direct-coupled silicon mirostrip detectors

International Nuclear Information System (INIS)

Wood, M.L.; Kuehler, J.F.; Kalbfleisch, G.R.; Kaplan, D.H.; Skubic, P.; Lucas, A.D.; Wilburn, C.D.

1991-01-01

Charge correlation measurements of several Micron 38 mm by 58 mm by 300 micron thick double-sided DC-coupled microstripe detectors have been made. They have been bench tested with a Sr-90 source, with the detectors operated at -22C. The correlation of the charges collected from both the diode ('holes') and the ohmic ('electrons') stripes are equal within a signal to noise resolution of 20:1 (i.e., 1,200 electrons noise) using common-mode subtracted double-correlated sampling with the Berkeley SVXD readout chip

Gate Engineering in SOI LDMOS for Device Reliability

Directory of Open Access Journals (Sweden)

Aanand

2016-01-01

Full Text Available A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF SOI LDMOS transistor performance has been simulated with 0.35µm technology in this paper. The proposed device has one poly gate and double metal gate arranged in a stepped manner, from channel to drift region. The first gate uses n+ poly (near source where as other two gates of aluminium. The first gate with thin gate oxide has good control over the channel charge. The third gate with thick gate oxide at drift region reduce gate to drain capacitance. The arrangement of second and third gates in a stepped manner in drift region spreads the electric field uniformly. Using two dimensional device simulations, the proposed SOI LDMOS is compared with conventional structure and the extended metal structure. We demonstrate that the proposed device exhibits significant enhancement in linearity, breakdown voltage, on-resistance and HCI. Double metal gate reduces the impact ionization area which helps to improve the Hot Carrier Injection effect..

Multiplexed charge-locking device for large arrays of quantum devices

Energy Technology Data Exchange (ETDEWEB)

Puddy, R. K., E-mail: rkp27@cam.ac.uk; Smith, L. W; Chong, C. H.; Farrer, I.; Griffiths, J. P.; Ritchie, D. A.; Smith, C. G. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Al-Taie, H.; Kelly, M. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, 9 J. J. Thomson Avenue, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Pepper, M. [Department of Electronic and Electrical Engineering, University College London, WC1E 7JE (United Kingdom)

2015-10-05

We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Directory of Open Access Journals (Sweden)

Matias Urdampilleta

2015-08-01

Full Text Available Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer because of silicon’s “semiconductor vacuum” character and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability, and scalability. Here, we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum-dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterize the charge dynamics, which reveals a charge T_{2}^{*} of 200 ps and a relaxation time T_{1} of 100 ns. Additionally, we demonstrate a spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

Piezo-phototronic Boolean logic and computation using photon and strain dual-gated nanowire transistors.

Science.gov (United States)

Yu, Ruomeng; Wu, Wenzhuo; Pan, Caofeng; Wang, Zhaona; Ding, Yong; Wang, Zhong Lin

2015-02-04

Using polarization charges created at the metal-cadmium sulfide interface under strain to gate/modulate electrical transport and optoelectronic processes of charge carriers, the piezo-phototronic effect is applied to process mechanical and optical stimuli into electronic controlling signals. The cascade nanowire networks are demonstrated for achieving logic gates, binary computations, and gated D latches to store information carried by these stimuli. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study on effective MOSFET channel length extracted from gate capacitance

Science.gov (United States)

Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

2018-01-01

The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

Coupled heat-electromagnetic simulation of inductive charging stations for electric vehicles

NARCIS (Netherlands)

Kaufmann, C.; Günther, M.; Klagges, D.; Richwin, M.; Schöps, S.; Maten, ter E.J.W.

2012-01-01

Coupled electromagnetic-heat problems have been studied for induction or inductive heating, for dielectric heating, for testing of corrosion, for detection of cracks, for hardening of steel, and more recently for inductive charging of electric vehicles. In nearly all cases a simple co-simulation is

Coupled heat-electromagnetic simulation of inductive charging stations for electric vehicles

NARCIS (Netherlands)

Kaufmann, C.; Günther, M.; Klagges, D.; Richwin, M.; Schöps, S.; Maten, ter E.J.W.; Fontes, M.; Günther, M.; Marheineke, N.

2014-01-01

Coupled electromagnetic-heat problems have been studied for induction or inductive heating, for dielectric heating, for testing of corrosion, for detection of cracks, for hardening of steel, and more recently for inductive charging of electric vehicles. In nearly all cases a simple co-simulation is

Heavy-ion-induced, gate-rupture in power MOSFETs

International Nuclear Information System (INIS)

Fischer, T.A.

1987-01-01

A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

Charge and Spin Transport in Spin-orbit Coupled and Topological Systems

KAUST Repository

Ndiaye, Papa Birame

2017-10-31

In the search for low power operation of microelectronic devices, spin-based solutions have attracted undeniable increasing interest due to their intrinsic magnetic nonvolatility. The ability to electrically manipulate the magnetic order using spin-orbit interaction, associated with the recent emergence of topological spintronics with its promise of highly efficient charge-to-spin conversion in solid state, offer alluring opportunities in terms of system design. Although the related technology is still at its infancy, this thesis intends to contribute to this engaging field by investigating the nature of the charge and spin transport in spin-orbit coupled and topological systems using quantum transport methods. We identified three promising building blocks for next-generation technology, three classes of systems that possibly enhance the spin and charge transport efficiency: (i)- topological insulators, (ii)- spin-orbit coupled magnonic systems, (iii)- topological magnetic textures (skyrmions and 3Q magnetic state). Chapter 2 reviews the basics and essential concepts used throughout the thesis: the spin-orbit coupling, the mathematical notion of topology and its importance in condensed matter physics, then topological magnetism and a zest of magnonics. In Chapter 3, we study the spin-orbit torques at the magnetized interfaces of 3D topological insulators. We demonstrated that their peculiar form, compared to other spin-orbit torques, have important repercussions in terms of magnetization reversal, charge pumping and anisotropic damping. In Chapter 4, we showed that the interplay between magnon current jm and magnetization m in homogeneous ferromagnets with Dzyaloshinskii-Moriya (DM) interaction, produces a field-like torque as well as a damping-like torque. These DM torques mediated by spin wave can tilt the imeaveraged magnetization direction and are similar to Rashba torques for electronic systems. Moreover, the DM torque is more efficient when magnons are

Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

Science.gov (United States)

Cui, Jianmin

2016-01-01

Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

Study and realisation of a double integration charge encoder at VXI standard

International Nuclear Information System (INIS)

Leconte, A.

1994-07-01

The 16 channels charge encoder herein described equips the Phoswich scintillators which, associated with photomultiplier tubes, constitutes the first ring of the INDRA Multidetector. This 4 π Multidetector, located at GANIL at Caen, is first presented. In this encoder, two integrations are made, offering a distinction between the fast component of the signal from the detector and the slow one (decreasing times: 2,4 ns and 320ns respectively). This measurement is performed by the integration of each component within an adjustable time-gate. Apart from the two integrations, the encoder realizes the detection of the impulsion with a constant fraction discriminator, the generation of the two gates and a test function. The use of surface mounted components together with the choice of the VXI interconnection standard, also presented in this report, allowed highly integrated electronics. The encoder uses the sliding scale principle. It also includes the electronics for some programmable adjustments, the remote visualisation of important signals and the logic for the conversion. (author). 22 refs

On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

Science.gov (United States)

Lemell, C.; El-Said, A. S.; Meissl, W.; Gebeshuber, I. C.; Trautmann, C.; Toulemonde, M.; Burgdörfer, J.; Aumayr, F.

2007-10-01

We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (˜GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.

Slow-light dynamics in nonlinear periodic waveguides couplers

DEFF Research Database (Denmark)

Sukhorukov, A.A.; Ha, S.; Powell, D.A.

2009-01-01

We predict pulse switching and reshaping through nonlinear mixing of two slow-light states with different phase velocities in the same frequency range, and report on the first experimental observation of slow-light tunneling between coupled periodic waveguides.......We predict pulse switching and reshaping through nonlinear mixing of two slow-light states with different phase velocities in the same frequency range, and report on the first experimental observation of slow-light tunneling between coupled periodic waveguides....

Self-force on an arbitrarily coupled scalar charge in cylindrical thin-shell spacetimes

Energy Technology Data Exchange (ETDEWEB)

Tomasini, C.; Rubin de Celis, E.; Simeone, C. [Universidad de Buenos Aires y IFIBA, CONICET, Ciudad Universitaria, Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Buenos Aires (Argentina)

2018-02-15

We consider the arbitrarily coupled field and self-force of a static massless scalar charge in cylindrical spacetimes with one or two asymptotic regions, with the only matter content concentrated in a thin-shell characterized by the trace of the extrinsic curvature jump κ. The self-force is studied numerically and analytically in terms of the curvature coupling ξ. We found the critical values ξ{sub c}{sup (n)} = n/(ρ(r{sub s})κ), with n element of N and ρ(r{sub s}) the metric's profile function at the position of the shell, for which the scalar field is divergent in the background configuration. The pathological behavior is removed by restricting the coupling to a domain of stability. The coupling has a significant influence over the self-force at the vicinities of the shell, and we identified ξ = 1/4 as the value for which the scalar force changes sign at a neighborhood of r{sub s}; if κ(1-4ξ) > 0 the shell acts repulsively as an effective potential barrier, while if κ(1-4ξ) < 0 it attracts the charge as a potential well. The sign of the asymptotic self-force only depends on whether there is an angle deficit or not on the external region where the charge is placed; conical asymptotics produce a leading attractive force, while Minkowski regions produce a repulsive asymptotic self-force. (orig.)

Value of intensified nursing

OpenAIRE

Raymann, Cornelia; Konta, Brigitte; Prusa, Nina; Frank, Wilhelm

2006-01-01

The concept "intensified nursing" is mentioned in differentiation to concepts of "nursing care" or "nursing" which intensifies resources or patient contact. Especially psychic and social needs of patients are very appreciated in nursing. A similar type of nursing is known under the concept "advanced nursing practice" (ANP) which means, that a specialised, academically trained nurse offers an extended nursing care in which a focus on the published knowledge of evidence based research is made. ...

Zero-Dispersion Slow Light with Wide Bandwidth in Photonic Crystal Coupled Waveguides

International Nuclear Information System (INIS)

Xiao-Yu, Mao; Geng-Yan, Zhang; Yi-Dong, Huang; Wei, Zhang; Jiang-De, Peng

2008-01-01

By introducing an adjustment waveguide besides the incident waveguide, zero-dispersion slow light with wide bandwidth can be realized due to anticrossing of the incident waveguide mode and the adjustment waveguide mode. The width of the adjustment waveguide (W 2 ) and the hole radii of the coupling region (r') will change the dispersion of incident waveguide mode. Theoretical investigation reveals that zero dispersion at various low group velocity ν g in incident waveguide can be achieved. In particular, proper W 2 and r' can lead to the lowest ν g of 0.0085c at 1550 nm with wide bandwidth of 202 GHz for zero dispersion

Lexicon and Description of Sui Adjective Intensifiers

Directory of Open Access Journals (Sweden)

James N. Stanford

2007-01-01

Full Text Available Sui, an indigenous minority language of southwest China, has an elaborate system of adjective intensification. Adjectives are intensified with word-specific, bound morphemes that usually either rhyme with the base or alliterate with the base. Stanford (2007 notes morpho-phonological patterns that suggest reduplication, rhyme, alliteration, The Emergence of the Unmarked (McCarthy & Prince 1994, Yip 2001, identity avoidance, and “Copy But Don’t Repeat” (Kennard 2004. However, the adjective intensifiers defy a simple, fully predictable explanation in such terms; the intensifier lexicon may be best described as “patterned variety,” a case of lexicalized poetry or a poeticized lexicon. Word formation is guided by general patterns, but each specific intensifier may vary within those overall guidelines. Many adjectives have multiple intensifiers that bear subtle semantic and pragmatic distinctions. The current paper serves as a complement to Stanford (2007 by providing a detailed lexicon of the Sui adjective intensifiers for future reference and further analysis. This lexicon is based on the author’s fieldwork and represents the first detailed account of Sui adjective intensifiers for the wider linguistic community.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

Science.gov (United States)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Experimental evidence of state-selective charge transfer in inductively coupled plasma-atomic emission spectrometry

International Nuclear Information System (INIS)

Chan, George C.-Y.; Hieftje, Gary M.

2004-01-01

State-selective charge-transfer behavior was observed for Fe, Cr, Mn and Cu in inductively coupled plasma (ICP)-atomic emission spectrometry. Charge transfer from Ar + to Fe, Cr and Mn is state-selective because of inefficient collisional mixing of the quasiresonant charge-transfer energy levels with nearby levels. This low efficiency is the consequence of differences in electronic configuration of the core electrons. The reason for state-selective charge-transfer behavior to Cu is not clear, although a tentative explanation based on efficiency of intramultiplet and intermultiplet mixing for this special case is offered

An analytical gate tunneling current model for MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Kazerouni, Iman Abaspur, E-mail: imanabaspur@gmail.com; Hosseini, Seyed Ebrahim [Sabzevar Tarbiat Moallem University, Electrical and Computer Department (Iran, Islamic Republic of)

2012-03-15

Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present-generation MOSFETs is studied. In the proposed model, we calculate the electron wave function at the semiconductor-oxide interface and inversion charge by treating the inversion layer as a potential well, including some simplifying assumptions. Then we compute the gate tunneling current using the calculated wave function. The proposed model results have an excellent agreement with experimental results in the literature.

Coupling between the voltage-sensing and pore domains in a voltage-gated potassium channel.

Science.gov (United States)

Schow, Eric V; Freites, J Alfredo; Nizkorodov, Alex; White, Stephen H; Tobias, Douglas J

2012-07-01

Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence.

Fluoroscopy without image intensifier

International Nuclear Information System (INIS)

Canevaro, L.; Drexler, G.

2001-01-01

The objective of the present work was to evaluate the doses received by patients during fluoroscopy procedures carried out with an equipment without image intensifier. This evaluation is providing dose levels that our patients are presently exposed, and gives the data for epidemiological studies on risk estimate of cancer induction in patients exposed earlier when no image intensifiers existed. Diamentor M4 and E meters were used to measure the product dose-area (DAP). The data were acquired during barium enema, barium meal, barium swallow and histerosalpingographies. The measured values of DAP are considered high. This work intends to call the attention toward the optimization of the radiological protection in facilities that still use equipment without image intensifiers. While this equipment cannot be disabled, the patient exposure monitoring should be an incentive, and the application of radiological protection practices and programs of quality assurance should be of priority. (author)

Cell adhesion monitoring of human induced pluripotent stem cell based on intrinsic molecular charges

Science.gov (United States)

Sugimoto, Haruyo; Sakata, Toshiya

2014-01-01

We have shown a simple way for real-time, quantitative, non-invasive, and non-label monitoring of human induced pluripotent stem (iPS) cell adhesion by use of a biologically coupled-gate field effect transistor (bio-FET), which is based on detection of molecular charges at cell membrane. The electrical behavior revealed quantitatively the electrical contacts of integrin-receptor at the cell membrane with RGDS peptide immobilized at the gate sensing surface, because that binding site was based on cationic α chain of integrin. The platform based on the bio-FET would provide substantial information to evaluate cell/material bio-interface and elucidate biding mechanism of adhesion molecules, which could not be interpreted by microscopic observation.

Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

KAUST Repository

Poelking, Carl; Cho, Eunkyung; Malafeev, Alexander; Ivanov, Viktor; Kremer, Kurt; Risko, Chad; Bré das, Jean-Luc; Andrienko, Denis

2013-01-01

We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

KAUST Repository

Poelking, Carl

2013-01-31

We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

Modeling of capacitor charging dynamics in an energy harvesting system considering accurate electromechanical coupling effects

Science.gov (United States)

Bagheri, Shahriar; Wu, Nan; Filizadeh, Shaahin

2018-06-01

This paper presents an iterative numerical method that accurately models an energy harvesting system charging a capacitor with piezoelectric patches. The constitutive relations of piezoelectric materials connected with an external charging circuit with a diode bridge and capacitors lead to the electromechanical coupling effect and the difficulty of deriving accurate transient mechanical response, as well as the charging progress. The proposed model is built upon the Euler-Bernoulli beam theory and takes into account the electromechanical coupling effects as well as the dynamic process of charging an external storage capacitor. The model is validated through experimental tests on a cantilever beam coated with piezoelectric patches. Several parametric studies are performed and the functionality of the model is verified. The efficiency of power harvesting system can be predicted and tuned considering variations in different design parameters. Such a model can be utilized to design robust and optimal energy harvesting system.

Formation of strain-induced quantum dots in gated semiconductor nanostructures

Directory of Open Access Journals (Sweden)

Ted Thorbeck

2015-08-01

Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

Superfluid plasmas: Multivelocity nonlinear hydrodynamics of superfluid solutions with charged condensates coupled electromagnetically

International Nuclear Information System (INIS)

Holm, D.D.; Kupershmidt, B.A.

1987-01-01

Four levels of nonlinear hydrodynamic description are presented for a nondissipative multicondensate solution of superfluids with vorticity. First, the multivelocity superfluid (MVSF) theory is extended to the case of a multivelocity superfluid plasma (MVSP), in which some of the superfluid condensates (protons, say) are charged and coupled electromagnetically to an additional, normal, charged fluid (electrons). The resulting drag-current density is derived due to the electromagnetic coupling of the condensates with the normal fluids. For the case of one charged condensate, the MVSP equations simplify to what we call superfluid Hall magnetohydrodynamics (SHMHD) in the approximation that displacement current and electron inertia are negligible, and local charge neutrality is imposed. The contribution of the charged condensate to the Hall drift force is determined. In turn, neglecting the Hall effect in SHMHD gives the equations of superfluid magnetohydrodynamics (SMHD). Each set of equations (MVSF, MVSP, SHMHD, and SMHD) is shown to be Hamiltonian and to possess a Poisson bracket associated with the dual space of a corresponding semidirect-product Lie algebra with a generalized two-cocycle defined on it. Topological conservation laws (helicities) associated with the kernels of these Lie algebras are also discussed as well as those associated physically with generalized Kelvin theorems for conservation of superfluid circulation around closed loops moving with the normal fluid

Isovector coupling channel and central properties of the charge density distribution in heavy spherical nuclei

International Nuclear Information System (INIS)

Haddad, S.

2010-01-01

The influence of the isovector coupling channel on the central depression parameter and the central value of the charge density distribution in heavy spherical nuclei was studied. The isovector coupling channel leads to about 50% increase of the central depression parameter, and weakens the dependency of both central depression parameter and the central density on the asymmetry, impressively contributing to the semibubble form of the charge density distribution in heavy nuclei, and increasing the probability of larger nuclei with higher proton numbers and higher neutron-to-proton ratios stable. (author)

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter

International Nuclear Information System (INIS)

Rousseau, P.

1968-01-01

In a first part, after a brief recall concerning 'planar' technology we discuss the various parasitic elements associated with integrated circuits components. Mathematical formulae of these elements are derived. In a second part, we present a matrix of 22 transistors and 12 resistors which has been realized. This matrix enables the integration of the major part of nuclear circuits. Some of the obtained circuits are shown, particularly an emitter coupled logic gate which presents good electrical behaviour. (author) [fr

Coupled plasmon-exciton induced transparency and slow light in plexcitonic metamaterials

DEFF Research Database (Denmark)

Panahpour, Ali; Silani, Yaser; Farrokhian, Marzieh

2012-01-01

Classical analogues of the well-known effect of electromagnetically induced transparency (EIT) in quantum optics have been the subject of considerable research in recent years from microwave to optical frequencies, because of their potential applications in slow light devices, studying nonlinear...... effects in low-loss nanostructures, and development of low-loss metamaterials. A large variety of plasmonic structures has been proposed for producing classical EIT-like effects in different spectral ranges. The current approach for producing plasmon-induced transparency is usually based on precise design...... effects in metamaterials composed of such coupled NPs. To reveal more details of the wave-particle and particle-particle interactions, the electric field distribution and field lines of Poynting vector inside and around the NPs are calculated using the finite element method. Finally, using extended...

Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation

International Nuclear Information System (INIS)

Meguro, T.; Hida, A.; Koguchi, Y.; Miyamoto, S.; Yamamoto, Y.; Takai, H.; Maeda, K.; Aoyagi, Y.

2003-01-01

Nanoscale transformation of electronic states by highly charged ion (HCI) impact on graphite surfaces is described. The high potential energy of slow HCI, which induces multiple emission of electrons from the surface, provides a strong modification of the electronic states of the local area upon graphite surfaces. The HCI impact and the subsequent surface treatment either by electron injection from a scanning tunneling microscopy tip or by He-Cd laser irradiation induce a localized transition from sp 2 to sp 3 hybridization in graphite, resulting in the formation of nanoscale diamond-like structures (nanodiamond) at the impact region. From Raman spectroscopic measurements on sp 2 related peaks, it is found that the HCI irradiation creates vacancy complexes in contrast to ions having a lower charge state, which generate single vacancies. It is of interest that a single impact of HCI creates one nanodiamond structure, suggesting potential applications of HCI in nanoscale material processing

Integrating a redox-coupled dye-sensitized photoelectrode into a lithium-oxygen battery for photoassisted charging.

Science.gov (United States)

Yu, Mingzhe; Ren, Xiaodi; Ma, Lu; Wu, Yiying

2014-10-03

With a high theoretical specific energy, the non-aqueous rechargeable lithium-oxygen battery is a promising next-generation energy storage technique. However, the large charging overpotential remains a challenge due to the difficulty in electrochemically oxidizing the insulating lithium peroxide. Recently, a redox shuttle has been introduced into the electrolyte to chemically oxidize lithium peroxide. Here, we report the use of a triiodide/iodide redox shuttle to couple a built-in dye-sensitized titanium dioxide photoelectrode with the oxygen electrode for the photoassisted charging of a lithium-oxygen battery. On charging under illumination, triiodide ions are generated on the photoelectrode, and subsequently oxidize lithium peroxide. Due to the contribution of the photovoltage, the charging overpotential is greatly reduced. The use of a redox shuttle to couple a photoelectrode and an oxygen electrode offers a unique strategy to address the overpotential issue of non-aqueous lithium-oxygen batteries and also a distinct approach for integrating solar cells and batteries.

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

Science.gov (United States)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

Dynamic imaging with a triggered and intensified CCD camera system in a high-intensity neutron beam

International Nuclear Information System (INIS)

Vontobel, P.; Frei, G.; Brunner, J.; Gildemeister, A.E.; Engelhardt, M.

2005-01-01

When time-dependent processes within metallic structures should be inspected and visualized, neutrons are well suited due to their high penetration through Al, Ag, Ti or even steel. Then it becomes possible to inspect the propagation, distribution and evaporation of organic liquids as lubricants, fuel or water. The principle set-up of a suited real-time system was implemented and tested at the radiography facility NEUTRA of PSI. The highest beam intensity there is 2x10 7 cm -2 s -1 , which enables to observe sequences in a reasonable time and quality. The heart of the detection system is the MCP intensified CCD camera PI-Max with a Peltier cooled chip (1300x1340 pixels). The intensifier was used for both gating and image enhancement, where as the information was accumulated over many single frames on the chip before readout. Although, a 16-bit dynamic range is advertised by the camera manufacturers, it must be less due to the inherent noise level from the intensifier. The obtained result should be seen as the starting point to go ahead to fit the different requirements of car producers in respect to fuel injection, lubricant distribution, mechanical stability and operation control. Similar inspections will be possible for all devices with repetitive operation principle. Here, we report about two measurements dealing with the lubricant distribution in a running motorcycle motor turning at 1200rpm. We were monitoring the periodic stationary movements of piston, valves and camshaft with a micro-channel plate intensified CCD camera system (PI-Max 1300RB, Princeton Instruments) triggered at exactly chosen time points

Intrinsic multistate switching of gold clusters through electrochemical gating

DEFF Research Database (Denmark)

Albrecht, Tim; Mertens, S.F.L.; Ulstrup, Jens

2007-01-01

The electrochemical behavior of small metal nanoparticles is governed by Coulomb-like charging and equally spaced charge-transfer transitions. Using electrochemical gating at constant bias voltage, we show, for the first time, that individual nanoparticles can be operated as multistate switches i...

Voltage-Gated Potassium Channels: A Structural Examination of Selectivity and Gating

Science.gov (United States)

Kim, Dorothy M.; Nimigean, Crina M.

2016-01-01

Voltage-gated potassium channels play a fundamental role in the generation and propagation of the action potential. The discovery of these channels began with predictions made by early pioneers, and has culminated in their extensive functional and structural characterization by electrophysiological, spectroscopic, and crystallographic studies. With the aid of a variety of crystal structures of these channels, a highly detailed picture emerges of how the voltage-sensing domain reports changes in the membrane electric field and couples this to conformational changes in the activation gate. In addition, high-resolution structural and functional studies of K+ channel pores, such as KcsA and MthK, offer a comprehensive picture on how selectivity is achieved in K+ channels. Here, we illustrate the remarkable features of voltage-gated potassium channels and explain the mechanisms used by these machines with experimental data. PMID:27141052

Dynamic behavior of the intensified alternative configurations for quaternary distillation

DEFF Research Database (Denmark)

Ramirez-Marquez, Cesar; Cabrera-Ruiz, Julián; Juan Gabriel Segovia-Hernandez, Juan Gabriel

2016-01-01

Process intensification emerges as an important tool in the synthesis of multicomponent distillation configurations aimed at the reduction of the energy use and capital costs. Operational and fixed costs savings coupled with simplicity and controllability design configurations appear as an essent......Process intensification emerges as an important tool in the synthesis of multicomponent distillation configurations aimed at the reduction of the energy use and capital costs. Operational and fixed costs savings coupled with simplicity and controllability design configurations appear...... value decomposition technique in all frequency domain. In order to complete the control study, the distillation schemes were subjected to closed-loop dynamic simulations. The results show that there are cases in which the intensified sequences do not only provide energy savings, but also may offer...

Fast-ICCD photography and gated photon counting measurements of blackbody emission from particulates generated in the KrF-laser ablation of BN and YBCO

Energy Technology Data Exchange (ETDEWEB)

Geohegan, D.B.

1992-11-01

Fast intensified CCD photography and gated photon counting following KrF-laser irradiation of YBCO and BN targets reveals the first observations of very weak emission from slow-moving ejecta up to 2 cm from the target and times extending to {approx}1.5 ms. Time-of-flight velocities inferred from the emission measurements indicate velocities (v {approximately} (0.45--1.2) {times} 10{sup 4} cm s{sup {minus}1}) comparable to those measured for the large particles which often accompany the pulsed laser deposition process. Gated photon counting is employed to obtain temporally resolved spectra of this weak emission. The spectral shape is characteristic of blackbody emission, which shifts to longer wavelengths as the particles cool during flight in vacuum. Estimates of the temperature of the particles are made based on the emissivity of a perfect blackbody and range from 2200 K to 3200 K for both BN and YBCO when irradiated at ({Phi}{sub 248} = 3.5 J cm{sup {minus}2} and 1.5 J cm{sup {minus}2}, respectively. The temperature decrease of the particles in vacuum is compared to a radiative cooling model which gives estimates of the initial surface temperature and radii of the particles.

Quasiclassical methods for spin-charge coupled dynamics in low-dimensional systems

International Nuclear Information System (INIS)

Corini, Cosimo

2009-01-01

Spintronics is a new field of study whose broad aim is the manipulation of the spin degrees of freedom in solid state systems. One of its main goals is the realization of devices capable of exploiting, besides the charge, the carriers' - and possibly the nuclei's - spin. The presence of spin-orbit coupling in a system enables the spin and charge degrees of freedom to ''communicate'', a favorable situation if one is to realize such devices. More importantly, it offers the opportunity of doing so by relying solely on electric fields, whereas magnetic fields are otherwise required. Eminent examples of versatile systems with built-in and variously tunable spin-orbit interaction are two-dimensional electron - or hole - gases. The study of spin-charge coupled dynamics in such a context faces a large number of open questions, both of the fundamental and of the more practical type. To tackle the problem we rely on the quasiclassical formalism. This is an approximate quantum-field theoretical formulation with a solid microscopic foundation, perfectly suited for describing phenomena at the mesoscopic scale, and bearing a resemblance to standard Boltzmann theory which makes for physical transparency. Originally born to deal with transport in electron-phonon systems, we first generalize it to the case in which spin-orbit coupling is present, and then move on to apply it to specific situations and phenomena. Among these, to the description of the spin Hall effect and of voltage induced spin polarizations in two-dimensional electron gases under a variety of conditions - stationary or time-dependent, in the presence of magnetic and non-magnetic disorder, in the bulk or in confined geometries -, and to the problem of spin relaxation in narrow wires. (orig.)

Quasiclassical methods for spin-charge coupled dynamics in low-dimensional systems

Energy Technology Data Exchange (ETDEWEB)

Corini, Cosimo

2009-06-12

Spintronics is a new field of study whose broad aim is the manipulation of the spin degrees of freedom in solid state systems. One of its main goals is the realization of devices capable of exploiting, besides the charge, the carriers' - and possibly the nuclei's - spin. The presence of spin-orbit coupling in a system enables the spin and charge degrees of freedom to ''communicate'', a favorable situation if one is to realize such devices. More importantly, it offers the opportunity of doing so by relying solely on electric fields, whereas magnetic fields are otherwise required. Eminent examples of versatile systems with built-in and variously tunable spin-orbit interaction are two-dimensional electron - or hole - gases. The study of spin-charge coupled dynamics in such a context faces a large number of open questions, both of the fundamental and of the more practical type. To tackle the problem we rely on the quasiclassical formalism. This is an approximate quantum-field theoretical formulation with a solid microscopic foundation, perfectly suited for describing phenomena at the mesoscopic scale, and bearing a resemblance to standard Boltzmann theory which makes for physical transparency. Originally born to deal with transport in electron-phonon systems, we first generalize it to the case in which spin-orbit coupling is present, and then move on to apply it to specific situations and phenomena. Among these, to the description of the spin Hall effect and of voltage induced spin polarizations in two-dimensional electron gases under a variety of conditions - stationary or time-dependent, in the presence of magnetic and non-magnetic disorder, in the bulk or in confined geometries -, and to the problem of spin relaxation in narrow wires. (orig.)

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

Science.gov (United States)

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Compiling gate networks on an Ising quantum computer

International Nuclear Information System (INIS)

Bowdrey, M.D.; Jones, J.A.; Knill, E.; Laflamme, R.

2005-01-01

Here we describe a simple mechanical procedure for compiling a quantum gate network into the natural gates (pulses and delays) for an Ising quantum computer. The aim is not necessarily to generate the most efficient pulse sequence, but rather to develop an efficient compilation algorithm that can be easily implemented in large spin systems. The key observation is that it is not always necessary to refocus all the undesired couplings in a spin system. Instead, the coupling evolution can simply be tracked and then corrected at some later time. Although described within the language of NMR, the algorithm is applicable to any design of quantum computer based on Ising couplings

C.C.D. readout of a picosecond streak camera with an intensified C.C.D

International Nuclear Information System (INIS)

Lemonier, M.; Richard, J.C.; Cavailler, C.; Mens, A.; Raze, G.

1984-08-01

This paper deals with a digital streak camera readout device. The device consists in a low light level television camera made of a solid state C.C.D. array coupled to an image intensifier associated to a video-digitizer coupled to a micro-computer system. The streak camera images are picked-up as a video signal, digitized and stored. This system allows the fast recording and the automatic processing of the data provided by the streak tube

Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

Directory of Open Access Journals (Sweden)

Mallory Mativenga

2012-09-01

Full Text Available Bias-induced charge migration in amorphous oxide semiconductor thin-film transistors (TFTs confirmed by overshoots of mobility after bias stressing dual gated TFTs is presented. The overshoots in mobility are reversible and only occur in TFTs with a full bottom-gate (covers the whole channel and partial top-gate (covers only a portion of the channel, indicating a bias-induced uneven distribution of ionized donors: Ionized donors migrate towards the region of the channel that is located underneath the partial top-gate and the decrease in the density of ionized donors in the uncovered portion results in the reversible increase in mobility.

Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

International Nuclear Information System (INIS)

Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

2010-01-01

We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

X-ray image intensifier tube

International Nuclear Information System (INIS)

1981-01-01

An improved real-time x-ray image intensifier tube of the proximity type used for medical x-ray fluoroscopy is described. It is claimed that this intensifier is of sufficient gain and resolution whilst remaining convenient to use and that the design is such that the patient dosage is minimized whilst the x-ray image information content at the scintillator-photocathode screen is maximized. (U.K.)

Charging-delay effect on longitudinal dust acoustic shock wave in strongly coupled dusty plasma

International Nuclear Information System (INIS)

Ghosh, Samiran; Gupta, M.R.

2005-01-01

Taking into account the charging-delay effect, the nonlinear propagation characteristics of longitudinal dust acoustic wave in strongly coupled collisional dusty plasma described by generalized hydrodynamic model have been investigated. In the 'hydrodynamic limit', a Korteweg-de Vries Burger (KdVB) equation with a damping term arising due to dust-neutral collision is derived in which the Burger term is proportional to the dissipation due to dust viscosity through dust-dust correlation and charging-delay-induced anomalous dissipation. On the other hand, in the 'kinetic limit', a KdVB equation with a damping term and a nonlocal nonlinear forcing term arising due to memory-dependent strong correlation effect of dust fluid is derived in which the Burger term depends only on the charging-delay-induced dissipation. Numerical solution of integrodifferential equations reveals that (i) dissipation due to dust viscosity and principally due to charging delay causes excitation of the longitudinal dust acoustic shock wave in strongly coupled dusty plasma and (ii) dust-neutral collision does not appear to play any direct role in shock formation. The condition for the generation of shock is also discussed briefly

Photon attenuation by intensifying screens

International Nuclear Information System (INIS)

Holje, G.

1983-01-01

The photon attenuation by intensifying screens of different chemical composition has been determined. The attenuation of photons between 20 keV and 120 keV was measured by use of a multi-channel analyzer and a broad bremsstrahlung distribution. The attenuation by the intensifying screens was hereby determined simultaneously at many different monoenergetic photon energies. Experimentally determined attenuations were found to agree well with attenuation calculated from mass attenuation coefficients. The attenuation by the screens was also determined at various bremsstrahlung distributions, simulating those occurring behind the patient in various diagnostic X-ray examinations. The high attenuation in some of the intensifying screens form the basis for an analysis of the construction of asymmetric screen pairs. Single screen systems are suggested as a favourable alternative to thick screen pair systems. (Author)

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Recovery of slow potentials in AC-coupled electrocorticography: application to spreading depolarizations in rat and human cerebral cortex

DEFF Research Database (Denmark)

Hartings, Jed A; Watanabe, Tomas; Dreier, Jens P

2009-01-01

Cortical spreading depolarizations (spreading depressions and peri-infarct depolarizations) are a pathology intrinsic to acute brain injury, generating large negative extracellular slow potential changes (SPCs) that, lasting on the order of minutes, are studied with DC-coupled recordings in animals...... of the inverse filter was validated by its ability to recover both simulated and real low-frequency input test signals. The inverse filter was then applied to AC-coupled ECoG recordings from five patients who underwent invasive monitoring after aneurysmal subarachnoid hemorrhage. For 117 SPCs, the inverse filter...

Robust Deterministic Controlled Phase-Flip Gate and Controlled-Not Gate Based on Atomic Ensembles Embedded in Double-Sided Optical Cavities

Science.gov (United States)

Liu, A.-Peng; Cheng, Liu-Yong; Guo, Qi; Zhang, Shou

2018-02-01

We first propose a scheme for controlled phase-flip gate between a flying photon qubit and the collective spin wave (magnon) of an atomic ensemble assisted by double-sided cavity quantum systems. Then we propose a deterministic controlled-not gate on magnon qubits with parity-check building blocks. Both the gates can be accomplished with 100% success probability in principle. Atomic ensemble is employed so that light-matter coupling is remarkably improved by collective enhancement. We assess the performance of the gates and the results show that they can be faithfully constituted with current experimental techniques.

X-ray image intensifier camera tubes and semiconductor targets

International Nuclear Information System (INIS)

1979-01-01

A semiconductor target for use in an image intensifier camera tube and a camera using the target are described. The semiconductor wafer for converting an electron image onto electrical signal consists mainly of a collector region, preferably n-type silicon. It has one side for receiving the electron image and an opposite side for storing charge carriers generated in the collector region by high energy electrons forming a charge image. The first side comprises a highly doped surface layer covered with a metal buffer layer permeable to the incident electrons and thick enough to dissipate some of the incident electron energy thereby improving the signal-to-noise ratio. This layer comprises beryllium on niobium on the highly doped silicon surface zone. Low energy Kα X-ray radiation is generated in the first layer, the radiation generated in the second layer (mainly Lα radiation) is strongly absorbed in the silicon layer. A camera tube using such a target with a photocathode for converting an X-ray image into an electron image, means to project this image onto the first side of the semiconductor wafer and means to read out the charge pattern on the second side are also described. (U.K.)

New feature of the neutron color image intensifier

Science.gov (United States)

Nittoh, Koichi; Konagai, Chikara; Noji, Takashi; Miyabe, Keisuke

2009-06-01

We developed prototype neutron color image intensifiers with high-sensitivity, wide dynamic range and long-life characteristics. In the prototype intensifier (Gd-Type 1), a terbium-activated Gd 2O 2S is used as the input-screen phosphor. In the upgraded model (Gd-Type 2), Gd 2O 3 and CsI:Na are vacuum deposited to form the phosphor layer, which improved the sensitivity and the spatial uniformity. A europium-activated Y 2O 2S multi-color scintillator, emitting red, green and blue photons with different intensities, is utilized as the output screen of the intensifier. By combining this image intensifier with a suitably tuned high-sensitive color CCD camera, higher sensitivity and wider dynamic range could be simultaneously attained than that of the conventional P20-phosphor-type image intensifier. The results of experiments at the JRR-3M neutron radiography irradiation port (flux: 1.5×10 8 n/cm 2/s) showed that these neutron color image intensifiers can clearly image dynamic phenomena with a 30 frame/s video picture. It is expected that the color image intensifier will be used as a new two-dimensional neutron sensor in new application fields.

New feature of the neutron color image intensifier

International Nuclear Information System (INIS)

Nittoh, Koichi; Konagai, Chikara; Noji, Takashi; Miyabe, Keisuke

2009-01-01

We developed prototype neutron color image intensifiers with high-sensitivity, wide dynamic range and long-life characteristics. In the prototype intensifier (Gd-Type 1), a terbium-activated Gd 2 O 2 S is used as the input-screen phosphor. In the upgraded model (Gd-Type 2), Gd 2 O 3 and CsI:Na are vacuum deposited to form the phosphor layer, which improved the sensitivity and the spatial uniformity. A europium-activated Y 2 O 2 S multi-color scintillator, emitting red, green and blue photons with different intensities, is utilized as the output screen of the intensifier. By combining this image intensifier with a suitably tuned high-sensitive color CCD camera, higher sensitivity and wider dynamic range could be simultaneously attained than that of the conventional P20-phosphor-type image intensifier. The results of experiments at the JRR-3M neutron radiography irradiation port (flux: 1.5x10 8 n/cm 2 /s) showed that these neutron color image intensifiers can clearly image dynamic phenomena with a 30 frame/s video picture. It is expected that the color image intensifier will be used as a new two-dimensional neutron sensor in new application fields.

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

International Nuclear Information System (INIS)

Rodilla, H; González, T; Mateos, J; Moschetti, G; Grahn, J

2011-01-01

In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n s , have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n s shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results

Quantization effects on the inversion mode of a double gate MOS

Science.gov (United States)

Mondol, Kalyan; Hasan, Md. Manzurul; Arafath, Yeasir; Alam, Khairul

We investigate the quantization effects on the gate capacitance and charge distribution of a double gate MOSFET using a self-consistent solution of Poisson and Schrödinger equations of the industry standard simulation package Silvaco. Quantization effects on the gate C-V are simulated by varying the electron and hole effective masses. We notice that the inversion capacitance value decreases as the effective mass goes below 0.1mo and the shape of the C-V curve changes to step like in the inversion. We also notice that the inversion switches from surface inversion to volume inversion for low effective mass, and the quantization effect (step like shape) in C-V and volume inversion in charge profile happen at the same effective mass.

Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

International Nuclear Information System (INIS)

Gupta, Santosh K.; Baishya, Srimanta

2013-01-01

A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate (CSG) MOSFETs has been developed. Based on this a subthreshold drain current model has also been derived. This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model. The fringing gate capacitances taken into account are outer fringe capacitance, inner fringe capacitance, overlap capacitance, and sidewall capacitance. The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily. (semiconductor devices)

Radiographic intensifying screens

International Nuclear Information System (INIS)

Van Landeghem, W.K.; Suys, A.R.

1979-01-01

A fluorescent x-ray image intensifying screen is described which comprises discrete particles of fluorescent material dispersed in a binder layer. Intensifying screens are employed to increase the exposure of a photosensitive plate or film without increasing the x-ray exposure dose when struck by x-rays. The screen has an outermost layer containing solid particulate material protruding from a coherent film-forming organic binder medium and having a static friction coefficient at room temperature not higher than 0.50 on steel. The outermost layer may be characterized by micro-unevennesses of at least 3 μm and at least 9 protruding particles per 0.35 sq. cm. These particles have a static friction coefficient less than 0.3 and are made of a solid polystyrene, polyaklylene and/or a solid organic fluorinated polymer. (JTA)

Microscopic Theory of Coupled Slow Activated Dynamics in Glass-Forming Binary Mixtures.

Science.gov (United States)

Zhang, Rui; Schweizer, Kenneth S

2018-04-05

The Elastically Collective Nonlinear Langevin Equation theory for one-component viscous liquids and suspensions is generalized to treat coupled slow activated relaxation and diffusion in glass-forming binary sphere mixtures of any composition, size ratio, and interparticle interactions. A trajectory-level dynamical coupling parameter concept is introduced to construct two coupled dynamic free energy functions for the smaller penetrant and larger matrix particle. A two-step dynamical picture is proposed where the first-step process involves matrix-facilitated penetrant hopping quantified in a self-consistent manner based on a temporal coincidence condition. After penetrants dynamically equilibrate, the effectively one-component matrix particle dynamics is controlled by a new dynamic free energy (second-step process). Depending on the time scales associated with the first- and second-step processes, as well as the extent of matrix-correlated facilitation, distinct physical scenarios are predicted. The theory is implemented for purely hard-core interactions, and addresses the glass transition based on variable kinetic criteria, penetrant-matrix coupled activated relaxation, self-diffusion of both species, dynamic fragility, and shear elasticity. Testable predictions are made. Motivated by the analytic ultralocal limit idea derived for pure hard sphere fluids, we identify structure-thermodynamics-dynamics relationships. As a case study for molecule-polymer thermal mixtures, the chemically matched fully miscible polystyrene-toluene system is quantitatively studied based on a predictive mapping scheme. The resulting no-adjustable-parameter results for toluene diffusivity and the mixture glass transition temperature are in good agreement with experiment. The theory provides a foundation to treat diverse dynamical problems in glass-forming mixtures, including suspensions of colloids and nanoparticles, polymer-molecule liquids, and polymer nanocomposites.

Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

International Nuclear Information System (INIS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Lin, Kun-Yao; Wu, Yi-Chun; Huang, Shih-Feng; Chiang, Cheng-Lung; Chen, Po-Lin; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, Alan

2014-01-01

This study investigates the impact of gate bias stress with and without light illumination in a-Si:H thin film transistors. It has been observed that the I–V curve shifts toward the positive direction after negative and positive gate bias stress due to interface state creation at the gate dielectric. However, this study found that threshold voltages shift negatively and that the transconductance curve maxima are anomalously degraded under illuminated positive gate bias stress. In addition, threshold voltages shift positively under illuminated negative gate bias stress. These degradation behaviors can be ascribed to charge trapping in the passivation layer dominating degradation instability and are verified by a double gate a-Si:H device. - Highlights: • There is abnormal V T shift induced by illuminated gate bias stress in a-Si:H thin film transistors. • Electron–hole pair is generated via trap-assisted photoexcitation. • Abnormal transconductance hump is induced by the leakage current from back channel. • Charge trapping in the passivation layer is likely due to the fact that a constant voltage has been applied to the top gate

High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

Science.gov (United States)

Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

2015-05-22

A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Mechanosensitive gating of Kv channels.

Directory of Open Access Journals (Sweden)

Catherine E Morris

Full Text Available K-selective voltage-gated channels (Kv are multi-conformation bilayer-embedded proteins whose mechanosensitive (MS Popen(V implies that at least one conformational transition requires the restructuring of the channel-bilayer interface. Unlike Morris and colleagues, who attributed MS-Kv responses to a cooperative V-dependent closed-closed expansion↔compaction transition near the open state, Mackinnon and colleagues invoke expansion during a V-independent closed↔open transition. With increasing membrane tension, they suggest, the closed↔open equilibrium constant, L, can increase >100-fold, thereby taking steady-state Popen from 0→1; "exquisite sensitivity to small…mechanical perturbations", they state, makes a Kv "as much a mechanosensitive…as…a voltage-dependent channel". Devised to explain successive gK(V curves in excised patches where tension spontaneously increased until lysis, their L-based model falters in part because of an overlooked IK feature; with recovery from slow inactivation factored in, their g(V datasets are fully explained by the earlier model (a MS V-dependent closed-closed transition, invariant L≥4. An L-based MS-Kv predicts neither known Kv time courses nor the distinctive MS responses of Kv-ILT. It predicts Kv densities (hence gating charge per V-sensor several-fold different from established values. If opening depended on elevated tension (L-based model, standard gK(V operation would be compromised by animal cells' membrane flaccidity. A MS V-dependent transition is, by contrast, unproblematic on all counts. Since these issues bear directly on recent findings that mechanically-modulated Kv channels subtly tune pain-related excitability in peripheral mechanoreceptor neurons we undertook excitability modeling (evoked action potentials. Kvs with MS V-dependent closed-closed transitions produce nuanced mechanically-modulated excitability whereas an L-based MS-Kv yields extreme, possibly excessive

Evaluation of a charged coupled device camera for streamer chamber applications

International Nuclear Information System (INIS)

Holmgren, D.; Wallick, W.; Kenyon, R.; Lubatti, H.J.

1978-01-01

The response of a charged coupled device to a Ne light source is studied and compared to the Kodak SO-143 film commonly used for streamer chamber applications. It is found that the CCD-202 cooled to -10 0 C is considerably more sensitive than the film. A test of a CCD-based measurement system observing a streamer chamber is described. 3 refs

Interaction of slow, highly charged ions with the surface of ionic crystals

International Nuclear Information System (INIS)

Heller, Rene

2009-01-01

In this thesis the creation of permanent nanostructures induced by the impact of very slow (v≤5 x 10 5 m/s) highly charged (q≤40) ions on the ionic crystal surfaces of CaF 2 and KBr is investigated. The systematic analysis of the samples surfaces by means of atomic force microscopy supplies information on the influence of the potential as well as the kinetic projectile energy on the process of structure creation. The individual impact of highly charged ions on the KBr(001) surface can initiate the creation of mono-atomic deep pit-like structures -nanopits- with a lateral size of a few 10 nm. The volume of these pits and the corresponding number of sputtered secondary particles show a linear dependence on the projectiles potential energy. For the onset of pit formation a kinetic energy dependent threshold in the potential energy E grenz pot (E kin ) could be identified. Based on the defect-mediated desorption by electrons and by including effects of defect agglomeration a consistent model for the process of pit formation was drawn. In this work the recently discovered creation of hillock-like structures by impact of highly charged ions on CaF 2 (111) surfaces could be verified for lowest kinetic energies (E kin ≤150 eV x q). For the first time the potential energy of impinging projectiles could be identified to be exclusively responsible for the creation of nanostructures. Furthermore, a shift of potential energy threshold for hillock formation was observed for very small projectile velocities. Within the framework of cooperation with the Vienna University of Technology simulations based on the inelastic thermal spike model were performed, which allowed to interlink the individual hillock formation with a local melting of the ionic lattice. The essential influence of electron emission during the interaction of the highly charged ions with the surface on the process of nanostructuring was taken into consideration by complementary investigations of the secondary

Evaluation of charge coupled devices as alpha particle detectors

International Nuclear Information System (INIS)

Pace, R.; Haskard, M.; Watts, S.; Holmes-Siedle, A.; Solanky, M.

1996-01-01

The ability of the Charge Coupled Device (CCD) to provide spectroscopic and flux information for highly ionising radiation has been investigated. CCDs and related imaging chips are becoming increasingly affordable. In addition advances in technology are producing smaller and better devices. Since imaging chips are based on some variation of the pn-diode structure it is expected and known that they are sensitive to ionising radiation as well as light. Indeed specially designed CCDs are able to be used to image X-rays. This paper reports on the response of CCDs to alpha particles. (author)

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

Science.gov (United States)

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

The effect of dust charge inhomogeneity on low-frequency modes in a strongly coupled plasma

International Nuclear Information System (INIS)

Farid, T.; Mamun, A.A.; Shukla, P.K.

2000-01-01

An analysis of low-frequency modes accounting for dust grain charge fluctuation and equilibrium grain charge inhomogeneity in a strongly coupled dusty plasma is presented. The existence of an extremely low frequency mode, which is due to the inhomogeneity in the equilibrium dust grain charge, is reported. Besides, the equilibrium dust grain charge inhomogeneity makes the dust-acoustic mode unstable. The strong correlations in the dust fluid significantly drive a new mode as well as the existing dust-acoustic mode. The applications of these results to recent experimental and to some space and astrophysical situations are discussed

Tuning Rashba spin-orbit coupling in homogeneous semiconductor nanowires

Science.gov (United States)

Wójcik, Paweł; Bertoni, Andrea; Goldoni, Guido

2018-04-01

We use k .p theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a nonlinear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with the SOC coefficients reported in Phys. Rev. B 91, 201413(R) (2015), 10.1103/PhysRevB.91.201413, but not with the much larger values reported in Nat. Commun. 8, 478 (2017), 10.1038/s41467-017-00315-y. We discuss possible origins of this discrepancy.

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

2016-01-01

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro

2016-05-24

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

The Implications of Gated Society in Jakarta Metropolitan Region: A Multiple-Case Study in Tangerang District, Banten, Indonesia

Directory of Open Access Journals (Sweden)

INDAH SURYA WARDHANI

2016-02-01

Full Text Available This paper argued that the gating system intensifies existing divergence of the gated communities and the kampung communities. The significant dissimilarities between the residents and the dwellers strongly indicate social inequality. The notion of gated society at the neighborhood level remains problematic. The existence of fortress raises some ethical questions whether the rich, the high-level professional, and the famous have right to fort to themselves and keep other citizens out, whether they have privilege to set the boundaries and live separately from society as well as maintain the amenities exclusively. The gated society inevitably brings enormous policy consequences. This paper recommend housing policy as social legislation to regulate the notion of gated society. The long term practices of exclusion within fortress, and public space privatization will impede the function and very idea of the future citizenship. Beyond social redistribution, the principle idea of housing policy is promoting inclusive right for sustainable development. The absence of the inclusiveness results in a decline of democracy.

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Science.gov (United States)

Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S.; Desai, Dhruv K.; Rodgers, Griffin F.; Bradley, Aaron J.; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F.

2015-01-01

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene’s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices. PMID:26273961

Coupled spin and charge collective excitations in a spin polarized electron gas

International Nuclear Information System (INIS)

Marinescu, D.C.; Quinn, J.J.; Yi, K.S.

1997-01-01

The charge and longitudinal spin responses induced in a spin polarized quantum well by a weak electromagnetic field are investigated within the framework of the linear response theory. The authors evaluate the excitation frequencies for the intra- and inter-subband transitions of the collective charge and longitudinal spin density oscillations including many-body corrections beyond the random phase approximation through the spin dependent local field factors, G σ ± (q,ω). An equation-of-motion method was used to obtain these corrections in the limit of long wavelengths, and the results are given in terms of the equilibrium pair correlation function. The finite degree of spin polarization is shown to introduce coupling between the charge and spin density modes, in contrast with the result for an unpolarized system

Radial-pulse propagation and impedance characteristics of optically shuttered channel intensifier tubes

International Nuclear Information System (INIS)

Detch, J.L. Jr.; Noel, B.W.

1981-01-01

Electrically gated proximity-focused channel intensifier tubes are often used as optical shutters. Optimum nanosecond shuttering requires both understanding the electrical pulse propagation across the device structure and proper impedance matching. A distributed-transmission-line model is developed that describes analytically the voltage- and current-wave propagation characteristics as functions of time for any point on the surface. The optical gain's spatial uniformity and shutter-open times are shown to depend on the electrical pulse width and amplitude, and on the applied bias. The driving-point impedance is derived from the model and is expressed as a function of an infinite sum of terms in the complex frequency. The synthesis in terms of lumped-constant network elements is realized in first- and second-Foster equivalent circuits. Experimental impedance data are compared with the model's predictions and deviations from the ideal model are discussed

Critical slowing down and error analysis in lattice QCD simulations

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Stefan [Humboldt-Universitaet, Berlin (Germany). Inst. fuer Physik; Sommer, Rainer; Virotta, Francesco [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

2010-09-15

We study the critical slowing down towards the continuum limit of lattice QCD simulations with Hybrid Monte Carlo type algorithms. In particular for the squared topological charge we find it to be very severe with an effective dynamical critical exponent of about 5 in pure gauge theory. We also consider Wilson loops which we can demonstrate to decouple from the modes which slow down the topological charge. Quenched observables are studied and a comparison to simulations of full QCD is made. In order to deal with the slow modes in the simulation, we propose a method to incorporate the information from slow observables into the error analysis of physical observables and arrive at safer error estimates. (orig.)

Critical slowing down and error analysis in lattice QCD simulations

International Nuclear Information System (INIS)

Schaefer, Stefan; Sommer, Rainer; Virotta, Francesco

2010-09-01

We study the critical slowing down towards the continuum limit of lattice QCD simulations with Hybrid Monte Carlo type algorithms. In particular for the squared topological charge we find it to be very severe with an effective dynamical critical exponent of about 5 in pure gauge theory. We also consider Wilson loops which we can demonstrate to decouple from the modes which slow down the topological charge. Quenched observables are studied and a comparison to simulations of full QCD is made. In order to deal with the slow modes in the simulation, we propose a method to incorporate the information from slow observables into the error analysis of physical observables and arrive at safer error estimates. (orig.)

Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics

KAUST Repository

Wang, Zhong Lin

2010-12-01

Due to the polarization of ions in a crystal that has non-central symmetry, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. For materials such as ZnO, GaN, and InN in the wurtzite structure family, the effect of piezopotential on the transport behavior of charge carriers is significant due to their multiple functionalities of piezoelectricity, semiconductor and photon excitation. By utilizing the advantages offered by these properties, a few new fields have been created. Electronics fabricated by using inner-crystal piezopotential as a "gate" voltage to tune/control the charge transport behavior is named piezotronics, with applications in strain/force/pressure triggered/controlled electronic devices, sensors and logic units. Piezo-phototronic effect is a result of three-way coupling among piezoelectricity, photonic excitation and semiconductor transport, which allows tuning and controlling of electro-optical processes by strain induced piezopotential. The objective of this review article is to introduce the fundamentals of piezotronics and piezo-phototronics and to give an updated progress about their applications in energy science and sensors. © 2010 Elsevier Ltd All rights reserved.

Proton-coupled electron transfer versus hydrogen atom transfer: generation of charge-localized diabatic states.

Science.gov (United States)

Sirjoosingh, Andrew; Hammes-Schiffer, Sharon

2011-03-24

The distinction between proton-coupled electron transfer (PCET) and hydrogen atom transfer (HAT) mechanisms is important for the characterization of many chemical and biological processes. PCET and HAT mechanisms can be differentiated in terms of electronically nonadiabatic and adiabatic proton transfer, respectively. In this paper, quantitative diagnostics to evaluate the degree of electron-proton nonadiabaticity are presented. Moreover, the connection between the degree of electron-proton nonadiabaticity and the physical characteristics distinguishing PCET from HAT, namely, the extent of electronic charge redistribution, is clarified. In addition, a rigorous diabatization scheme for transforming the adiabatic electronic states into charge-localized diabatic states for PCET reactions is presented. These diabatic states are constructed to ensure that the first-order nonadiabatic couplings with respect to the one-dimensional transferring hydrogen coordinate vanish exactly. Application of these approaches to the phenoxyl-phenol and benzyl-toluene systems characterizes the former as PCET and the latter as HAT. The diabatic states generated for the phenoxyl-phenol system possess physically meaningful, localized electronic charge distributions that are relatively invariant along the hydrogen coordinate. These diabatic electronic states can be combined with the associated proton vibrational states to generate the reactant and product electron-proton vibronic states that form the basis of nonadiabatic PCET theories. Furthermore, these vibronic states and the corresponding vibronic couplings may be used to calculate rate constants and kinetic isotope effects of PCET reactions.

Charge-coupled devices for particle detection with high spatial resolution

International Nuclear Information System (INIS)

Farley, F.J.; Damerell, C.J.S.; Gillman, A.R.; Wickens, F.J.

1980-10-01

The results of a study of the possible application of a thin microelectronic device (the charge-coupled device) to high energy physics as particle detectors with good spatial resolution which can distinguish between tracks emerging from the primary vertex and those from secondary vertices due to the decay of short lived particles with higher flavours, are reported. Performance characteristics indicating the spatial resolution, particle discrimination, time resolution, readout time and lifetime of such detectors have been obtained. (U.K.)

Study on efficiency of different topologies of magnetic coupled resonant wireless charging system

Science.gov (United States)

Cui, S.; Liu, Z. Z.; Hou, Y. J.; Zeng, H.; Yue, Z. K.; Liang, L. H.

2017-11-01

This paper analyses the relationship between the output power, the transmission efficiency and the frequency, load and coupling coefficient of the four kinds of magnetic coupled resonant wireless charging system topologies. Based on mutual inductance principle, four kinds of circuit models are established, and the expressions of output power and transmission efficiency of different structures are calculated. The difference between the two power characteristics and efficiency characteristics is compared by simulating the SS (series-series) and SP (series-parallel) type wireless charging systems. With the same parameters of circuit components, the SS structure is usually suitable for small load resistance. The SP structure can be applied to large load resistors, when the transmission efficiency of the system is required to keep high. If the operating frequency deviates from the system resonance frequency, the SS type system has higher transmission efficiency than the SP type system.

Slow flow and mural thrombus in aortic diseases: Spin-echo MR findings and their differentiation

International Nuclear Information System (INIS)

Chung, Jin Wook; Park, Jae Hyung; Han, Man Chung

1993-01-01

In order to evaluate the ability of spin-echo MR imaging to differentiate slow flow from mural thrombus in aortic diseases, we reviewed the spin-echo MR images of 13 patients with intraaortic thrombus documented by CT (N=11) or aortography (N=2). Six patients had aortic aneurysms and seven had aortic dissections. Intraaortic mural thrombi were accompanied by flow-related intraluminal signal of various pattern and extents in all 13 patients. On 10 gated MR studies, slow flow regions showed ever-echo rephasing phenomenon (N=8), interslice variation of signal intensities of the intraluminal signal (N=7) and flow-related ghost artifact (N=2). However, these MR flow phenomena were obscured on two of three non-gated studies. Seven of 13 intraaortic thrombi remained hyperintense on T2-weighted second-echo images. In these circumstance, a hypointense boundary layer between slow flow and mural thrombus, which was caused by either ' boundary layer dephasing phenomenon' of slow flow or 'paramagnetic T2 shortening' of fresh clot at the edge of mural thrombus, was very useful in discriminating the area of slow flow from that of mural thrombus. Proper interpretation of spin-echo MR images may obviate the need for phase display imaging or gradient-echo imaging in differentiating slow flow and mural thrombus

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

Science.gov (United States)

Chappanda, K. N.; Ilyas, S.; Younis, M. I.

2018-05-01

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5  ×  1012 oscillations.

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

KAUST Repository

Chappanda, K N

2018-02-16

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5 × 10 oscillations.

Micro-mechanical resonators for dynamically reconfigurable reduced voltage logic gates

KAUST Repository

Chappanda , K. N.; Ilyas, Saad; Younis, Mohammad I.

2018-01-01

Due to the limitations of transistor-based logic devices such as their poor performance at elevated temperature, alternative computing methods are being actively investigated. In this work, we present electromechanical logic gates using electrostatically coupled in-plane micro-cantilever resonators operated at modest vacuum conditions of 5 Torr. Operating in the first resonant mode, we demonstrate 2-bit XOR, 2- and 3-bit AND, 2- and 3-bit NOR, and 1-bit NOT gates; all condensed in the same device. Through the designed electrostatic coupling, the required voltage for the logic gates is reduced by 80%, along with the reduction in the number of electrical interconnects and devices per logic operation (contrary to transistors). The device is dynamically reconfigurable between any logic gates in real time without the need for any change in the electrical interconnects and the drive circuit. By operating in the first two resonant vibration modes, we demonstrate mechanical logic gates consisting of two 2-bit AND and two 2-bit XOR gates. The device is tested at elevated temperatures and is shown to be functional as a logic gate up to 150 °C. Also, the device has high reliability with demonstrated lifetime greater than 5 × 10 oscillations.

Molecular mechanism of voltage sensing in voltage-gated proton channels

Science.gov (United States)

Rebolledo, Santiago; Perez, Marta E.

2013-01-01

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

A novel charge sensitive preamplifier without the feedback resistor

International Nuclear Information System (INIS)

Bertuccio, G.

1992-01-01

A novel charge sensitive preamplifier which has no resistor in parallel with the feedback capacitor is presented. No external device or circuit is required to discharge the feedback capacitor. The detector leakage and signal current flows away through the gate of the first JFET which works with its gate to source junction slightly forward biased. The DC stabilization of the preamplifier is accomplished by an additional feedback loop, which permits to equalize the current flowing through the forward baised gate to source junction and the current coming from the detector. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using an input JFET with a transconductance to gate capacitance ratio of 4 mS/5.4 pF

Serializing off-the-shelf MOSFETs by Magnetically Coupling Their Gate Electrodes

DEFF Research Database (Denmark)

Dimopoulos, Emmanouil; Munk-Nielsen, Stig

2013-01-01

While the semiconductor industry struggles with the inherent trade-offs of solid-state devices, serialization of power switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), has been proven to be an advantageous alternative...... to acquire a high-efficient, high-voltage, fast-switching device. More than twenty years of research, on the serialization of solid-state devices, have resulted into several different stacking concepts. Among the prevailing ones, the gate balancing core technique, which has demonstrated very good performance...... in strings of high-power IGBT modules. In this paper, the limitations of the gate balancing core technique, when employed to serialize low or medium power off-the-shelf switches, are identified via experimental results. A new design specification for the interwinding capacitance of the employed transformer...

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

International Nuclear Information System (INIS)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

2014-01-01

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga + beam etching process

Characteristics of dual-gate thin-film transistors for applications in digital radiology

International Nuclear Information System (INIS)

Waechter, D.; Huang, Z.; Zhao, W.; Blevis, I.; Rowlands, J.A.

1996-01-01

A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a 'deliberate' gate, covering most of the channel length, and small 'parasitic' gates that consist of: overlap of source or drain metal over the top-gate oxide; and gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed. (author)

A gate current 1/f noise model for GaN/AlGaN HEMTs

International Nuclear Information System (INIS)

Liu Yu'an; Zhuang Yiqi

2014-01-01

This work presents a theoretical and experimental study on the gate current 1/f noise in AlGaN/GaN HEMTs. Based on the carrier number fluctuation in the two-dimensional electron gas channel of AlGaN/GaN HEMTs, a gate current 1/f noise model containing a trap-assisted tunneling current and a space charge limited current is built. The simulation results are in good agreement with the experiment. Experiments show that, if V g < V x (critical gate voltage of dielectric relaxation), gate current 1/f noise comes from the superimposition of trap-assisted tunneling RTS (random telegraph noise), while V g > V x , gate current 1/f noise comes from not only the trap-assisted tunneling RTS, but also the space charge limited current RTS. This indicates that the gate current 1/f noise of the GaN-based HEMTs device is sensitive to the interaction of defects and the piezoelectric relaxation. It provides a useful characterization tool for deeper information about the defects and their evolution in AlGaN/GaN HEMTs. (semiconductor devices)

An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47 as a separated double-gate HEMT

International Nuclear Information System (INIS)

Rathi, Servin; Gupta, Mridula; Gupta, R S; Jogi, Jyotika

2010-01-01

In this paper, a two-dimensional electron gas (2DEG) charge-control model for carrier density in the channel is developed for a separated double-gate high-electron-mobility transistor. The model is extended to calculate I d –V g characteristics of the device. The drain current model uses a polynomial dependence of sheet carrier concentration on the position of a quasi-Fermi energy level to predict the modulation of back carrier concentration due to a front gate bias. The characteristics are investigated for various channel thicknesses and delta doping concentrations in order to study the effect of the back gate on the overall device performance. The analytical results so obtained are verified by comparing them with simulated and experimental results. A good agreement between the results is obtained, thus validating the model

Hybrid metal-dielectric, slow wave structure with magnetic coupling and compensation

Energy Technology Data Exchange (ETDEWEB)

Smirnov, A.V., E-mail: asmirnov@radiabeam.com [RadiaBeam Systems LLC, 1713 Stewart St., Santa Monica, CA 90404 (United States); Savin, E. [RadiaBeam Systems LLC, 1713 Stewart St., Santa Monica, CA 90404 (United States); National Research Nuclear University “MEPhI”, Moscow 115409 (Russian Federation)

2016-06-01

A number of electron beam vacuum devices such as small radiofrequency (RF) linear accelerators (linacs) and microwave traveling wave tubes (TWTs) utilize slow wave structures which are usually rather complicated in production and may require multi-step brazing and time consuming tuning. Fabrication of these devices becomes challenging at centimeter wavelengths, at large number of cells, and when a series or mass production of such structures is required. A hybrid, metal-dielectric, periodic structure for low gradient, low beam current applications is introduced here as a modification of Andreev’s disk-and-washer (DaW) structure. Compensated type of coupling between even and odd TE01 modes in the novel structure results in negative group velocity with absolute values as high as 0.1c–0.2c demonstrated in simulations. Sensitivity to material imperfections and electrodynamic parameters of the disk-and-ring (DaR) structure are considered numerically using a single cell model.

Upwards Intensifiers in the English, German and Croatian Language

Directory of Open Access Journals (Sweden)

Anita Pavić Pintarić

2014-12-01

Full Text Available This paper investigates the upwards intensifiers (adverbs of intensifying in the English, German and Croatian language. Intensity as an important human cognitive category, and language expressivity is differently treated in grammars and dictionaries of all three languages, especially with respect to different degrees of intensity. In this paper we argue that it is possible to model a typology of upwards adverb intensifiers in the three languages, according to their morphosyntactic and semantic aspects. When it comes to intensifiers, it is necessary to describe which collocates are modified by intensifiers and which semantic fields the collocates belong to. The results of the corpus analysis based on Harry Potter novels show that all the three languages express the category of the upwards intensity in the same way: the number of intensifiers is similar, the collocates mostly belong to the same semantic fields and word classes, they have similar syntactic functions.

The CNCSN: one, two- and three-dimensional coupled neutral and charged particle discrete ordinates code package

International Nuclear Information System (INIS)

Voloschenko, A.M.; Gukov, S.V.; Kryuchkov, V.P.; Dubinin, A.A.; Sumaneev, O.V.

2005-01-01

The CNCSN package is composed of the following codes: -) KATRIN-2.0: a three-dimensional neutral and charged particle transport code; -) KASKAD-S-2.5: a two-dimensional neutral and charged particle transport code; -) ROZ-6.6: a one-dimensional neutral and charged particle transport code; -) ARVES-2.5: a preprocessor for the working macroscopic cross-section format FMAC-M for transport calculations; -) MIXERM: a utility code for preparing mixtures on the base of multigroup cross-section libraries in ANISN format; -) CEPXS-BFP: a version of the Sandia National Lab. multigroup coupled electron-photon cross-section generating code CEPXS, adapted for solving the charged particles transport in the Boltzmann-Fokker-Planck formulation with the use of discrete ordinate method; -) SADCO-2.4: Institute for High-Energy Physics modular system for generating coupled nuclear data libraries to provide high-energy particles transport calculations by multigroup method; -) KATRIF: the post-processor for the KATRIN code; -) KASF: the post-processor for the KASKAD-S code; and ROZ6F: the post-processor for the ROZ-6 code. The coding language is Fortran-90

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Chi, Li-Feng, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: chilf@suda.edu.cn, E-mail: bdong@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2015-03-23

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

International Nuclear Information System (INIS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-01-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process

Electrosynthesis of Copper-Tetracyanoquinodimethane Based on the Coupling Charge Transfer across Water/1,2-Dichloroethane Interface

International Nuclear Information System (INIS)

Huang, Li; Li, Pei; Pamphile, Ndagijimana; Tian, Zhong-Qun; Zhan, Dongping

2014-01-01

Graphical abstract: - Highlights: • Organic semiconductor CuTCNQ is synthesized through electrochemistry of liquid/liquid interface. • A coupling charge transfer (CCT) mechanism is proposed for organic electrosynthesis. • The obtained CuTCNQ has good electrochemical and electronic properties. - Abstract: The organic salt Copper-Tetracyanoquinodimethane (CuTCNQ) is an important semiconductor used in electronics for field-effect transistors, switches and memory devices. Here we present a novel electrosynthetic method of CuTCNQ microneedles based on the coupling charge transfer across water/1,2-dichloroethane (W/1,2-DCE) interface. A HOPG electrode is covered by a small volume of 1,2-DCE solution, which is further covered by an aqueous solution to construct the W/1,2-DCE interface. When TCNQ in 1,2-DCE phase is reduced on HOPG, Cu 2+ in the aqueous solution will transfer across the W/1,2-DCE interface in order to maintain the electric neutrality. Therein CuTCNQ microneedles are formed which have good solid-state electrochemical and electronic properties. This coupling charge transfer mechanism is valuable and broadens the applications of liquid/liquid interface in organic electrosynthesis

Comparison of gated and non-gated detectors for double-pulse laser induced plasma analysis of trace elements in iron oxide

International Nuclear Information System (INIS)

Heilbrunner, H.; Huber, N.; Wolfmeir, H.; Arenholz, E.; Pedarnig, J.D.; Heitz, J.

2012-01-01

Double-pulse laser-induced breakdown spectroscopy (LIBS) is an emerging technique for accurate compositional analysis of many different materials. We present results of collinear double-pulse LIBS for analysis of the trace elements aluminum, phosphorus and boron in sintered iron oxide targets. The samples were ablated in air by double-pulse Nd:YAG laser radiation (6 ns pulse duration, laser wavelength of 532 nm) and spectra were recorded with an Echelle spectrometer equipped either with a CCD (charge coupled device) or an ICCD (intensified charge coupled device) camera. For the trace elements aluminum and phosphorus, the use of the CCD detector system resulted in considerable higher signal-to-noise ratios and/or better limits of detection compared to the results achieved with the ICCD detector. The use of CCD double-pulse LIBS enables to detect low concentrations of phosphorus with a limit of detection of 10 ppm by evaluating the UV line at 214.91 nm, which overlaps with a Fe I line. Compared to the ICCD system, the CCD system requires the accumulation of a higher number of laser double-pulses to achieve acceptable signal quality. This can be disadvantageous for elements showing pronounced depletion effects as for the trace element boron in sintered iron oxide targets. - Highlights: ► Direct comparison of double-pulse LIBS analysis using CCD and ICCD detectors ► Double-pulse LIBS technique for monitoring of trace elements in iron oxide ► CCD detector can result in better signal-to-noise ratios and limits of detection. ► Low P concentrations detectable by CCD double-pulse LIBS of the line at 214.91 nm ► CCD system disadvantageous for elements showing pronounced depletion effects

Voltage-gated proton channel is expressed on phagosomes

International Nuclear Information System (INIS)

Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

2009-01-01

Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

International Nuclear Information System (INIS)

Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

2011-01-01

This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

Influence of magneto-electric coefficient for magnetic and electric charge injection properties in magneto-electric MIS capacitors

Energy Technology Data Exchange (ETDEWEB)

Yokota, T; Tsuboi, Y; Imura, R; Kito, S; Gomi, M, E-mail: yokota.takeshi@nitech.ac.jp [Department of Material Science and Engineering, Graduate School of Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya City, Aichi, 466-8555 (Japan)

2011-10-29

We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Science.gov (United States)

Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

2018-06-01

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Performance and analysis of wireless power charging system from room temperature to HTS magnet via strong resonance coupling method

International Nuclear Information System (INIS)

Chung, Y. D.; Lee, S. Y.; Lee, T. W.; Kim, J. S.; Lee, C. Y.

2016-01-01

The technology of supplying the electric power by wireless power transfer (WPT) is expected for the next generation power feeding system since it can supply the power to portable devices without any connectors through large air gap. As such a technology based on strongly coupled electromagnetic resonators is possible to deliver the large power and recharge them seamlessly; it has been considered as a noble option to wireless power charging system in the various power applications. Recently, various HTS wires have now been manufactured for demonstrations of transmission cables, motors, MAGLEV, and other electrical power components. However, since the HTS magnets have a lower index n value intrinsically, they are required to be charged from external power system through leads or internal power system. The portable area is limited as well as the cryogen system is bulkier. Thus, we proposed a novel design of wireless power charging system for superconducting HTS magnet (WPC4SM) based on resonance coupling method. As the novel system makes possible a wireless power charging using copper resonance coupled coils, it enables to portable charging conveniently in the superconducting applications. This paper presented the conceptual design and operating characteristics of WPC4SM using different shapes' copper resonance coil. The proposed system consists of four components; RF generator of 370 kHz, copper resonance coupling coils, impedance matching (IM) subsystem and HTS magnet including rectifier system

Performance and analysis of wireless power charging system from room temperature to HTS magnet via strong resonance coupling method

Energy Technology Data Exchange (ETDEWEB)

Chung, Y. D.; Lee, S. Y.; Lee, T. W.; Kim, J. S. [Suwon Science College, Suwon (Korea, Republic of); Lee, C. Y. [Korea Railroad Institute, Uiwang (Korea, Republic of)

2016-03-15

The technology of supplying the electric power by wireless power transfer (WPT) is expected for the next generation power feeding system since it can supply the power to portable devices without any connectors through large air gap. As such a technology based on strongly coupled electromagnetic resonators is possible to deliver the large power and recharge them seamlessly; it has been considered as a noble option to wireless power charging system in the various power applications. Recently, various HTS wires have now been manufactured for demonstrations of transmission cables, motors, MAGLEV, and other electrical power components. However, since the HTS magnets have a lower index n value intrinsically, they are required to be charged from external power system through leads or internal power system. The portable area is limited as well as the cryogen system is bulkier. Thus, we proposed a novel design of wireless power charging system for superconducting HTS magnet (WPC4SM) based on resonance coupling method. As the novel system makes possible a wireless power charging using copper resonance coupled coils, it enables to portable charging conveniently in the superconducting applications. This paper presented the conceptual design and operating characteristics of WPC4SM using different shapes' copper resonance coil. The proposed system consists of four components; RF generator of 370 kHz, copper resonance coupling coils, impedance matching (IM) subsystem and HTS magnet including rectifier system.

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

Science.gov (United States)

Ponseggi, B. G. (Editor); Johnson, H. C. (Editor)

1985-01-01

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Neutron image intensifier tubes

International Nuclear Information System (INIS)

Verat, M.; Rougeot, H.; Driard, B.

1983-01-01

The most frequently used techniques in neutron radiography employ a neutron converter consisting of either a scintillator or a thin metal sheet. The radiation created by the neutrons exposes a photographic film that is in contact with the converter: in the direct method, the film is exposed during the time that the object is irradiated with neutrons; in the transfer method, the film is exposed after the irradiation of the object with neutrons. In industrial non-destructive testing, when many identical objects have to be checked, these techniques have several disadvantages. Non-destructive testing systems without these disadvantages can be constructed around neutron-image intensifier tubes. A description and the operating characteristics of neutron-image intensifier tubes are given. (Auth.)

A hybrid, coupled approach for modeling charged fluids from the nano to the mesoscale

Science.gov (United States)

Cheung, James; Frischknecht, Amalie L.; Perego, Mauro; Bochev, Pavel

2017-11-01

We develop and demonstrate a new, hybrid simulation approach for charged fluids, which combines the accuracy of the nonlocal, classical density functional theory (cDFT) with the efficiency of the Poisson-Nernst-Planck (PNP) equations. The approach is motivated by the fact that the more accurate description of the physics in the cDFT model is required only near the charged surfaces, while away from these regions the PNP equations provide an acceptable representation of the ionic system. We formulate the hybrid approach in two stages. The first stage defines a coupled hybrid model in which the PNP and cDFT equations act independently on two overlapping domains, subject to suitable interface coupling conditions. At the second stage we apply the principles of the alternating Schwarz method to the hybrid model by using the interface conditions to define the appropriate boundary conditions and volume constraints exchanged between the PNP and the cDFT subdomains. Numerical examples with two representative examples of ionic systems demonstrate the numerical properties of the method and its potential to reduce the computational cost of a full cDFT calculation, while retaining the accuracy of the latter near the charged surfaces.

Direct Detection and Imaging of Low-Energy Electrons with Delta-Doped Charge-Coupled Devices

Science.gov (United States)

Nikzad, S.; Yu, Q.; Smith, A. L.; Jones, T. J.; Tombrello, T. A.; Elliott, S. T.

1998-01-01

We report the use fo delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50-1500 eV energy range. These are the first measurements with a solid state device to detect electrons in this energy range.

Effective Fault-Tolerant Quantum Computation with Slow Measurements

International Nuclear Information System (INIS)

DiVincenzo, David P.; Aliferis, Panos

2007-01-01

How important is fast measurement for fault-tolerant quantum computation? Using a combination of existing and new ideas, we argue that measurement times as long as even 1000 gate times or more have a very minimal effect on the quantum accuracy threshold. This shows that slow measurement, which appears to be unavoidable in many implementations of quantum computing, poses no essential obstacle to scalability

Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

Science.gov (United States)

Takulapalli, Bharath R

2010-02-23

Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

Study of a charge-coupled device for high-energy-particle detection

International Nuclear Information System (INIS)

Bhuiya, A.H.

1983-05-01

This presentation is based on measurements made to evaluate the application of charge-coupled devices as detectors of high-energy particles. The experiment was performed with a Fairchild Linear 256-Cell CCD111 array (size 8μm x 17 μm/cell), utilizing a light source instead of a particle beam. It was observed that the minimum detectable signal was limited to approx. 488 electrons at -50 0 C, where the readout and exposure times were about 260 ms and 400 ms respectively. The transfer inefficiency of the CCD111 was determined to be approx. 10 -4 . It has been concluded that at a lower temperature (approx. -100 0 C) or with faster readout (approx. 10 ms), the CCD111 would be able to detect the total deposited energy of minimum-ionizing charged particles

The application of charge-coupled device processors in automatic-control systems

Science.gov (United States)

Mcvey, E. S.; Parrish, E. A., Jr.

1977-01-01

The application of charge-coupled device (CCD) processors to automatic-control systems is suggested. CCD processors are a new form of semiconductor component with the unique ability to process sampled signals on an analog basis. Specific implementations of controllers are suggested for linear time-invariant, time-varying, and nonlinear systems. Typical processing time should be only a few microseconds. This form of technology may become competitive with microprocessors and minicomputers in addition to supplementing them.

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

Science.gov (United States)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Nonlinear energy loss of highly charged heavy ions

International Nuclear Information System (INIS)

Zwicknagel, G.Guenter.

2000-01-01

For slow, highly charged heavy ions strong coupling effects in the energy transfer from the projectile-ion to an electron target plasma become important. A theoretical description of this nonlinear ion stopping has to go beyond the standard approaches like the dielectric linear response or the binary collision model which are strictly valid only at weak ion-target coupling. Here we outline an improved treatment which is based on a suitable combination of binary collision and linear response contributions. As has been verified for isotropic, nonmagnetized electron plasmas by comparison with simulations, this approach well reproduces the essential features of nonlinear stopping up to moderate coupling strength. Its extension to anisotropic, magnetized electron plasmas basically involves the fully numerical determination of the momentum and energy transfer in binary ion-electron collisions in the presence of a magnetic field. First results of such calculations are presented and discussed

Properties of image intensifier-related halation artifact in limited volume cone-beam CT for dental use

International Nuclear Information System (INIS)

Hirukawa, Akiko; Okumura, Shinji; Matsuo, Ayae; Yokoi, Midori; Gotoh, Kenichi; Katsumata, Akitoshi; Naitoh, Munetaka; Ariji, Eiichiro

2006-01-01

Artifacts due to halation from an image intensifier (I.I.)/charge coupled device (CCD) system appear on limited-volume cone-beam computed tomography (CBCT). Regarding anterior tooth imaging, properties of this artifact in the geometrical relationships between field of view (FOV) and objective jaw region were studied. A water-filled plastic cylinder was used as a phantom of the head. A test object was constructed as a bone-equivalent phantom to be imaged. The test object was set in the phantom at positions corresponding to the anterior tooth arch. Position of the test object was shifted to simulate individual variations in the thickness of the labial soft tissue. Limited-volume CBCT images were acquired using a 3DX system in the various offset FOV position. The affection of an artifact was evaluated by the size of the object's image. The position of the test object in the phantom, i.e. the thickness of the labial soft tissue contributes to the intensity of artifact. However, even when the labial soft tissue was thick, affection from artifact was prominent when the FOV was set so that the image of the test object was depicted near the margin of FOV. (author)

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Science.gov (United States)

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

Combining Charge Couple Devices and Rate Sensors for the Feedforward Control System of a Charge Coupled Device Tracking Loop.

Science.gov (United States)

Tang, Tao; Tian, Jing; Zhong, Daijun; Fu, Chengyu

2016-06-25

A rate feed forward control-based sensor fusion is proposed to improve the closed-loop performance for a charge couple device (CCD) tracking loop. The target trajectory is recovered by combining line of sight (LOS) errors from the CCD and the angular rate from a fiber-optic gyroscope (FOG). A Kalman filter based on the Singer acceleration model utilizes the reconstructive target trajectory to estimate the target velocity. Different from classical feed forward control, additive feedback loops are inevitably added to the original control loops due to the fact some closed-loop information is used. The transfer function of the Kalman filter in the frequency domain is built for analyzing the closed loop stability. The bandwidth of the Kalman filter is the major factor affecting the control stability and close-loop performance. Both simulations and experiments are provided to demonstrate the benefits of the proposed algorithm.

Collective excitations of strongly coupled bilayer charged Bose liquids in the third-frequency-moment sum rule

International Nuclear Information System (INIS)

Tas, Murat; Tanatar, B.

2008-01-01

We calculate the collective excitation modes of strongly coupled bilayer charged Bose systems. We employ the dielectric matrix formulation to study the correlation effects within the random-phase approximation (RPA), the self consistent field approximation Singwi, Tosi, Land, and Sjoelander (STLS), and the quasilocalized charge approximation (QLCA), which satisfies the third-frequency-moment ( 3 >) sum rule. We find that the QLCA predicts a long-wavelength correlation-induced energy gap in the out-of-phase plasmon mode, similar to the situation in electronic bilayer systems. The energy gap and the plasmon density of states are studied as a function of interlayer separation and coupling parameter r s . The results should be helpful for experimental investigations

A capacitor cross-coupled common-gate low-noise amplifier

NARCIS (Netherlands)

Zhuo, W.; Li, X.; Shekhar, S.; Embabi, S.H.K.; Pineda de Gyvez, J.; Allstot, D.J.; Sanchez-Sinencio, E.

2005-01-01

The conventional common-gate low-noise amplifier (CGLNA) exhibits a relatively high noise figure (NF) at low operating frequencies relative to the MOSFET fT, which has limited its adoption notwithstanding its superior linearity, input matching, and stability compared to the inductively degenerated

Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

Energy Technology Data Exchange (ETDEWEB)

El-Said, A.S., E-mail: elsaid@kfupm.edu.sa [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Wilhelm, R.A.; Heller, R.; Akhmadaliev, Sh.; Schumann, E. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Sorokin, M. [National Research Centre ’Kurchatov Institute’, Kurchatov Square 1, 123182 Moscow (Russian Federation); Facsko, S. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden (Germany); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64289 Darmstadt (Germany)

2016-09-01

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV {sup 129}Xe{sup (33–40)+} and with various swift heavy ions (SHI) of 30 MeV I{sup 9+} and 374 MeV–2.2 GeV {sup 197}Au{sup 25+}. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.

An experimental study on the effects of different opening ranges of waste-gate on the exhaust soot emission of a turbo-charged DI diesel engine

International Nuclear Information System (INIS)

Ghazikhani, M.; Davarpanah, M.; Shaegh, S.A. Mousavi

2008-01-01

This experimental study was conducted to investigate the effects of different opening ranges of waste-gate of a turbo-charged DI diesel engine on improving the exhaust soot emission. Different opening ranges of waste-gate were supplied using an adjustable spring to load the actuating rod of the waste-gate in which, increasing the opening range of the waste-gate decreases the inlet manifold pressure. In this study, the maximum inlet manifold pressures which were supplied by changing the opening range of waste-gate were 0.1 bar, 0.23 bar, 0.26 bar and 0.52 bar over atmosphere and experiments were conducted under the ECE-R49, 13 mode standard test. At each mode of the test, soot emission was recorded and then brake specific soot emission was calculated. Results indicate that, soot emission decreases with increasing the maximum inlet manifold pressure from 0.1 bar to 0.23 bar. This reduction may be due to increasing the intake-air temperature which results in reduction of ignition delay that prolongs the late combustion phase. This improves the soot burnout process because enough time and sufficient in-cylinder temperature are available at the late combustion phase prior to exhaust valve opening. While for the higher maximum inlet manifold pressures from 0.23 bar to 0.52 bar, although there are enough time at the late combustion phase, but the soot emission increases which could be due to more reduction of the in-cylinder gas temperature at the end of combustion before EVO

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

International Nuclear Information System (INIS)

Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

2013-01-01

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

Design and commissioning of the photon monitors and optical transport lines for the advanced photon source positron accumulator ring

International Nuclear Information System (INIS)

Berg, W.; Yang, B.; Lumpkin, A.; Jones, J.

1996-01-01

Two photon monitors have been designed and installed in the positron accumulator ring (PAR) of the Advanced Photon Source. The photon monitors characterize the beam's transverse profile, bunch length, emittance, and energy spread in a nonintrusive manner. An optical transport line delivers synchrotron light from the PAR out of a high radiation environment. Both charge-coupled device and fast-gated, intensified cameras are used to measure the transverse beam profile (0.11 - 1 mm for damped beam) with a resolution of 0.06 mm. A streak camera (θ τ =I ps) is used to measure the bunch length which is in the range of 0.3-1 ns. The design of the various transport components and commissioning results of the photon monitors will be discussed

Fragment-orbital tunneling currents and electronic couplings for analysis of molecular charge-transfer systems.

Science.gov (United States)

Hwang, Sang-Yeon; Kim, Jaewook; Kim, Woo Youn

2018-04-04

In theoretical charge-transfer research, calculation of the electronic coupling element is crucial for examining the degree of the electronic donor-acceptor interaction. The tunneling current (TC), representing the magnitudes and directions of electron flow, provides a way of evaluating electronic couplings, along with the ability of visualizing how electrons flow in systems. Here, we applied the TC theory to π-conjugated organic dimer systems, in the form of our fragment-orbital tunneling current (FOTC) method, which uses the frontier molecular-orbitals of system fragments as diabatic states. For a comprehensive test of FOTC, we assessed how reasonable the computed electronic couplings and the corresponding TC densities are for the hole- and electron-transfer databases HAB11 and HAB7. FOTC gave 12.5% mean relative unsigned error with regard to the high-level ab initio reference. The shown performance is comparable with that of fragment-orbital density functional theory, which gave the same error by 20.6% or 13.9% depending on the formulation. In the test of a set of nucleobase π stacks, we showed that the original TC expression is also applicable to nondegenerate cases under the condition that the overlap between the charge distributions of diabatic states is small enough to offset the energy difference. Lastly, we carried out visual analysis on the FOTC densities of thiophene dimers with different intermolecular alignments. The result depicts an intimate topological connection between the system geometry and electron flow. Our work provides quantitative and qualitative grounds for FOTC, showing it to be a versatile tool in characterization of molecular charge-transfer systems.

Shaping charge excitations in chiral edge states with a time-dependent gate voltage

Science.gov (United States)

Misiorny, Maciej; Fève, Gwendal; Splettstoesser, Janine

2018-02-01

We study a coherent conductor supporting a single edge channel in which alternating current pulses are created by local time-dependent gating and sent on a beam-splitter realized by a quantum point contact. The current response to the gate voltage in this setup is intrinsically linear. Based on a fully self-consistent treatment employing a Floquet scattering theory, we analyze the effect of different voltage shapes and frequencies, as well as the role of the gate geometry on the injected signal. In particular, we highlight the impact of frequency-dependent screening on the process of shaping the current signal. The feasibility of creating true single-particle excitations with this method is confirmed by investigating the suppression of excess noise, which is otherwise created by additional electron-hole pair excitations in the current signal.

Modular Adder Designs Using Optimal Reversible and Fault Tolerant Gates in Field-Coupled QCA Nanocomputing

Science.gov (United States)

Bilal, Bisma; Ahmed, Suhaib; Kakkar, Vipan

2018-02-01

The challenges which the CMOS technology is facing toward the end of the technology roadmap calls for an investigation of various logical and technological solutions to CMOS at the nano scale. Two such paradigms which are considered in this paper are the reversible logic and the quantum-dot cellular automata (QCA) nanotechnology. Firstly, a new 3 × 3 reversible and universal gate, RG-QCA, is proposed and implemented in QCA technology using conventional 3-input majority voter based logic. Further the gate is optimized by using explicit interaction of cells and this optimized gate is then used to design an optimized modular full adder in QCA. Another configuration of RG-QCA gate, CRG-QCA, is then proposed which is a 4 × 4 gate and includes the fault tolerant characteristics and parity preserving nature. The proposed CRG-QCA gate is then tested to design a fault tolerant full adder circuit. Extensive comparisons of gate and adder circuits are drawn with the existing literature and it is envisaged that our proposed designs perform better and are cost efficient in QCA technology.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Science.gov (United States)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

International Nuclear Information System (INIS)

Michielis, M De; Ferraro, E; Fanciulli, M; Prati, E

2015-01-01

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations. (paper)

Developments of optical fast-gated imaging systems

International Nuclear Information System (INIS)

Koehler, H.A.; Kotecki, D.

1984-08-01

Several fast-gated imaging systems to measure ultra-fast single-transient data have been developed for time-resolved imaging of pulsed radiation sources. These systems were designed to achieve image recording times of 1 to 3 ms and dynamic ranges of >200:1 to produce large two-dimensional images (greater than or equal to 10 4 spatial points) of 1 to 2 ns exposure and small two-dimensional images (less than or equal to 200 spatial points) of less than or equal to 0.5 ns exposure. Both MCP intensified solid-state two-dimensional framing cameras and streak camera/solid-state camera systems were used; the framing camera system provides snap shots with high spatial resolution whereas the streak camera system provides for limited spatial points each with high temporal resolution. Applications of these systems include electron-beam, x-ray, gamma-ray, and neutron diagnostics. This report reviews the characteristics of the major components of fast-gated imaging systems developed at Lawrence Livermore National Laboratory. System performances are described in view of major experiments, and the diagnostic requirements of new experiments in atomic physics (x-ray lasers) and nuclear physics (fusion) are indicated

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Science.gov (United States)

Anand, Sunny; Sarin, R. K.

2017-02-01

In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET (HD_DMG_DLTFET). It is compared with conventional doping-less TFET (DLTFET) and dual material gate doping-less TFET (DMG_DLTFET) on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current ({I}\\text{ON}=94 μ \\text{A}/μ \\text{m}), {I}\\text{ON}/{I}\\text{OFF}(≈ 1.36× {10}13), \\text{point} (≈ 3\\text{mV}/\\text{dec}) and average subthreshold slope (\\text{AV}-\\text{SS}=40.40 \\text{mV}/\\text{dec}). The proposed device offers low total gate capacitance (C gg) along with higher drive current. However, with a better transconductance (g m) and cut-off frequency (f T), the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage (V EA) and output conductance (g d) are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices. From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.

High-fidelity gates in quantum dot spin qubits.

Science.gov (United States)

Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

2013-12-03

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

Intensifying screens in transaxial tomography

International Nuclear Information System (INIS)

Debelder, M.H.; Bollen, R.H.

1981-01-01

This patent claim by Agfa-Gevaert relates to a method for the production of transaxial tomographs, a combination of materials therefor and X-ray intensifying screens incorporating at least one reflecting element for use in transaxial tomography, wherein the exposure of a photographic silver halide emulsion material proceeds at an angle within the range of 2 0 to 10 0 in conjunction with an X-ray fluorescent intensifying screen including an ultra-violet and/or visible radiation reflective coating or sheet to increase the radiation output of the screen and to reduce the exposure time and radiation dose e.g. in medical X-ray applications. (author)

Mass-charge-heat coupled transfers in a single cell of a proton exchange membrane fuel cell; Transferts couples masse-charge-chaleur dans une cellule de pile a combustible a membrane polymere

Energy Technology Data Exchange (ETDEWEB)

Ramousse, J

2005-11-15

Understanding and modelling of coupled mass, charges and heat transfers phenomena are fundamental to analyze the electrical behaviour of the system. The aim of the present model is to describe electrical performances of a PEFMC according to the fluidic and thermal operating conditions. The water content of the membrane and the water distribution in the single cell are estimated according to the coupled simulations of mass transport in the thickness of the single cell and in the feeding channels of the bipolar plates. A microscopic model of a Gas Diffusion Electrode is built up to describe charges transfer phenomena occurring at the electrodes. Completed by a study of heat transfer in the Membrane Electrode Assembly, conditions and preferential sites of water vapor condensation can be highlighted. A set of measurements of the effective thermal conductivity of carbon felts used in fuel cells as porous backing layers have also been performed. Although the value of this parameter is essential for the study of heat transfer, it is still under investigation because of the strong thermal anisotropy of the medium. (author)

Ultrafast quantum computation in ultrastrongly coupled circuit QED systems

Science.gov (United States)

Wang, Yimin; Guo, Chu; Zhang, Guo-Qiang; Wang, Gangcheng; Wu, Chunfeng

2017-01-01

The latest technological progress of achieving the ultrastrong-coupling regime in circuit quantum electrodynamics (QED) systems has greatly promoted the developments of quantum physics, where novel quantum optics phenomena and potential computational benefits have been predicted. Here, we propose a scheme to accelerate the nontrivial two-qubit phase gate in a circuit QED system, where superconducting flux qubits are ultrastrongly coupled to a transmission line resonator (TLR), and two more TLRs are coupled to the ultrastrongly-coupled system for assistant. The nontrivial unconventional geometric phase gate between the two flux qubits is achieved based on close-loop displacements of the three-mode intracavity fields. Moreover, as there are three resonators contributing to the phase accumulation, the requirement of the coupling strength to realize the two-qubit gate can be reduced. Further reduction in the coupling strength to achieve a specific controlled-phase gate can be realized by adding more auxiliary resonators to the ultrastrongly-coupled system through superconducting quantum interference devices. We also present a study of our scheme with realistic parameters considering imperfect controls and noisy environment. Our scheme possesses the merits of ultrafastness and noise-tolerance due to the advantages of geometric phases. PMID:28281654

Ultracold Atoms in a Square Lattice with Spin-Orbit Coupling: Charge Order, Superfluidity, and Topological Signatures

Science.gov (United States)

Rosenberg, Peter; Shi, Hao; Zhang, Shiwei

2017-12-01

We present an ab initio, numerically exact study of attractive fermions in square lattices with Rashba spin-orbit coupling. The ground state of this system is a supersolid, with coexisting charge and superfluid order. The superfluid is composed of both singlet and triplet pairs induced by spin-orbit coupling. We perform large-scale calculations using the auxiliary-field quantum Monte Carlo method to provide the first full, quantitative description of the charge, spin, and pairing properties of the system. In addition to characterizing the exotic physics, our results will serve as essential high-accuracy benchmarks for the intense theoretical and especially experimental efforts in ultracold atoms to realize and understand an expanding variety of quantum Hall and topological superconductor systems.

Modeling and simulation of floating gate nanocrystal FET devices and circuits

Science.gov (United States)

Hasaneen, El-Sayed A. M.

The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to

Demonstration of quantum logic gates in liquid crystal nuclear magnetic resonance

International Nuclear Information System (INIS)

Marjanska, Malgorzata; Chuang, Isaac L.; Kubinec, Mark G.

2000-01-01

1 H- 13 C heteronuclear dipolar couplings are used to produce the NMR (nuclear magnetic resonance) version of a two bit controlled-NOT quantum logic gate. This gate is coupled with the Hadamard gate to complete a circuit which generates the Einstein-Podolsky-Rosen (EPR) state which is the maximally entangled state of a pair of spins. The EPR state is crucial for the potential exponential speed advantage of quantum computers over their classical counterparts. We sample the deviation density matrix of the two spin system to verify the presence of the EPR state. EPR state lifetimes are also measured with this technique, thereby demonstrating the viability of liquid crystals as a platform for quantum computing. (c) 2000 American Institute of Physics

Coupled-resonator optical waveguides

DEFF Research Database (Denmark)

Raza, Søren; Grgic, Jure; Pedersen, Jesper Goor

2010-01-01

Coupled-resonator optical waveguides hold potential for slow-light propagation of optical pulses. The dispersion properties may adequately be analyzed within the framework of coupled-mode theory. We extend the standard coupled-mode theory for such structures to also include complex-valued paramet......Coupled-resonator optical waveguides hold potential for slow-light propagation of optical pulses. The dispersion properties may adequately be analyzed within the framework of coupled-mode theory. We extend the standard coupled-mode theory for such structures to also include complex...

Efficient controlled-phase gate for single-spin qubits in quantum dots

NARCIS (Netherlands)

Meunier, T.; Calado, V.E.; Vandersypen, L.M.K.

2011-01-01

Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems

Development of multi-color scintillator based X-ray image intensifier

International Nuclear Information System (INIS)

Nittoh, Koichi; Konagai, Chikara; Noji, Takashi

2004-01-01

A multi-color scintillator based high-sensitive, wide dynamic range and long-life X-ray image intensifier has been developed. An europium activated Y 2 O 2 S scintillator, emitting red, green and blue photons of different intensities, is utilized as the output fluorescent screen of the intensifier. By combining this image intensifier with a suitably tuned high sensitive color CCD camera, it is possible for a sensitivity of the red color component to become six times higher than that of the conventional image intensifier. Simultaneous emission of a moderate green color and a weak blue color covers different sensitivity regions. This widens the dynamic range, by nearly two orders of ten. With this image intensifier, it is possible to image simultaneously complex objects containing various different X-ray transmission from paper, water or plastic to heavy metals. This high sensitivity intensifier, operated at lower X-ray exposure, causes less degradation of scintillator materials and less colorization of output screen glass, and thus helps achieve a longer lifetime. This color scintillator based image intensifier is being introduced for X-ray inspection in various fields

Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

International Nuclear Information System (INIS)

Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

2014-01-01

The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

Manufacturing of thermal neutron sensor using pMOS

International Nuclear Information System (INIS)

Lee, Nam Ho; Kim, Seung Ho

2005-05-01

A pMOSFET sensor having a Gadolinium converter has been invented successfully as a slow neutron sensor that is sensitive to neutron energy down to 0.025 eV. The Gd layer converts low energy neutrons to ionizing radiation of which the amount is proportional to neutron dose. Ionising radiation from neutron reactions changes the charge state of the gate oxide of the pMOSFET. The Gd-pMOSFETs were tested at a neutron beam port of HANARO research reactor and a 60 CO irradiation facility to investigate slow neutron response and gamma response, respectively. The voltage change was proportional to the accumulated slow neutron dose. The results from Gd coupled MOSFET neutron dosemeters shows an excellent sensitivity (15 - 16mV/cGy) and linearity to thermal neutrons with negligible background contamination. The results demonstrate the outstanding performance of the Gd coupled MOSFET neutron dosemeters clearly. The Gd-pMOSFET can also be used in a mixed radiation field by subtracting the voltage change of a pMOSFET without Gd from that of the Gd-pMOSFET

Spin-charge coupled dynamics driven by a time-dependent magnetization

Science.gov (United States)

Tölle, Sebastian; Eckern, Ulrich; Gorini, Cosimo

2017-03-01

The spin-charge coupled dynamics in a thin, magnetized metallic system are investigated. The effective driving force acting on the charge carriers is generated by a dynamical magnetic texture, which can be induced, e.g., by a magnetic material in contact with a normal-metal system. We consider a general inversion-asymmetric substrate/normal-metal/magnet structure, which, by specifying the precise nature of each layer, can mimic various experimentally employed setups. Inversion symmetry breaking gives rise to an effective Rashba spin-orbit interaction. We derive general spin-charge kinetic equations which show that such spin-orbit interaction, together with anisotropic Elliott-Yafet spin relaxation, yields significant corrections to the magnetization-induced dynamics. In particular, we present a consistent treatment of the spin density and spin current contributions to the equations of motion, inter alia, identifying a term in the effective force which appears due to a spin current polarized parallel to the magnetization. This "inverse-spin-filter" contribution depends markedly on the parameter which describes the anisotropy in spin relaxation. To further highlight the physical meaning of the different contributions, the spin-pumping configuration of typical experimental setups is analyzed in detail. In the two-dimensional limit the buildup of dc voltage is dominated by the spin-galvanic (inverse Edelstein) effect. A measuring scheme that could isolate this contribution is discussed.

Coupled Flow and Geomechanics Modeling of Slow Earthquakes: Application to Slow Slip Events (SSE) in the Guerrero Gap, Mexico

Science.gov (United States)

Alves da Silva Junior, J.; Frank, W.; Castineira, D.; Jha, B.; Juanes, R.

2016-12-01

Three major cycles of slow slip events (SSE) have been reported since the early 2000s in the Guerrero gap, Mexico, on the boundary between the Cocos and North American plates. Analysis of teleseismic waveforms recorded on a dense temporary seismic network in the Guerrero gap have found low S-wave velocity and high Vp/Vs ratios at the depths corresponding to the sources of SSE, implying the possible presence of fluids and thus an active dewatering process that may result in near-lithostatic pore pressure at the plate interface. Here we use coupled flow and geomechanics analysis of the Guerrero gap to model transient changes in the stress field in the subduction zone as a result of pore pressure fluctuations and potential fluid flow along the subduction interface. Our computational modeling approach couples a multiphase flow simulator with a mechanical simulator using the unconditionally stable fixed stress scheme for the sequential solution of the two-way coupling between flow and geomechanics (Jha and Juanes, 2014). We assume quasi-static mechanical deformation and neglect the inertial term in the solid momentum balance equation—an approximation that is valid to model SSE assuming aseismic slip. We represent the subducting Cocos fault as a surface embedded in a three-dimensional medium, and use zero thickness interface elements to accurately model stick-slip behavior under dynamically evolving fluid pressure and fault strength. We employ the rate- and state-dependent friction model in the evolution of the coefficient of friction. We calibrate our model using two distinct datasets—GPS data and tremor catalogs in the area of Guerrero gap—and by separately constraining the rate of water production from a model of mineral hydration with depth. Our quantitative modeling approach furnishes a mechanistic understanding of the relationship between pore pressure evolution, stress transfer and tremor migration, and helps elucidate the origin of SSE in this area.

High-fidelity Rydberg quantum gate via a two-atom dark state

DEFF Research Database (Denmark)

Petrosyan, David; Motzoi, Felix; Saffman, Mark

2017-01-01

We propose a two-qubit gate for neutral atoms in which one of the logical state components adiabatically follows a two-atom dark state formed by the laser coupling to a Rydberg state and a strong, resonant dipole-dipole exchange interaction between two Rydberg excited atoms. Our gate exhibits...

A single amino acid gates the KcsA channel

International Nuclear Information System (INIS)

Hirano, Minako; Okuno, Daichi; Onishi, Yukiko; Ide, Toru

2014-01-01

Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel

A single amino acid gates the KcsA channel

Energy Technology Data Exchange (ETDEWEB)

Hirano, Minako, E-mail: hirano37@gpi.ac.jp [Bio Photonics Laboratory, The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsu Nishi-ku Hamamatsu, Shizuoka 431-1202 (Japan); Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Okuno, Daichi, E-mail: dokuno@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Onishi, Yukiko, E-mail: yonishi@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Ide, Toru, E-mail: ide@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka Kita-ku Okayama-shi, Okayama 700-8530 (Japan)

2014-08-08

Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel.

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

International Nuclear Information System (INIS)

Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

2012-01-01

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination

International Nuclear Information System (INIS)

Chen, T.C.; Chang, T.C.; Hsieh, T.Y.; Tsai, C.T.; Chen, S.C.; Lin, C.S.; Jian, F.Y.; Tsai, M.Y.

2011-01-01

Mechanism of the instability for indium–gallium–zinc oxide thin film transistors caused by gate-bias stress performed in the dark and light illumination was investigated in this paper. The parallel V t shift with no degradation of subthreshold swing (S.S) and the fine fitting to the stretched-exponential equation indicate that charge trapping model dominates the degradation behavior under positive gate-bias stress. In addition, the significant gate-bias dependence of V t shift demonstrates that electron trapping effect easily occurs under large gate-bias since the average effective energy barrier of electron injection decreases with increasing gate bias. Moreover, the noticeable decrease of threshold voltage (V t ) shift under illuminated positive gate-bias stress and the accelerated recovery rate in the light indicate that the charge detrapping mechanism occurs under light illumination. Finally, the apparent negative V t shift under illuminated negative gate-bias stress was investigated in this paper. The average effectively energy barrier of electron and hole injection were extracted to clarify that the serious V t degradation behavior comparing with positive gate-bias stress was attributed to the lower energy barrier for hole injection.

Photo-Machining of Semiconductor Related Materials with Femtosecond Laser Ablation and Characterization of Its Properties

Science.gov (United States)

Yokotani, Atushi; Mizuno, Toshio; Mukumoto, Toru; Kawahara, Kousuke; Ninomiya, Takahumi; Sawada, Hiroshi; Kurosawa, Kou

We have analyzed the drilling process with femtosecond laser on the silicon surface in order to investigate a degree of thermal effect during the dicing process of the very thin silicon substrate. A regenerative amplified Ti:Al2O3 laser (E= 30˜500 μJ/pulse, τ= 200 fs, λ= 780 nm, f= 10 Hz) was used and focused onto a 50 μm-thick silicon sample. ICCD (Intensified Charge coupled Device) camera with a high-speed gate of 5 ns was utilized to take images of processing hole. First, we investigated the dependence of laser energy on the speed of the formation of the drilled hole. As a result, it was found that the lager the energy, the slower the speed of the formation under the minimum hole was obtained. Consequently, in the case of defocused condition, even when the smaller the energy density was used, the very slow speed of formation and the much lager thermal effects are simultaneously observed. So we can say that the degree of the thermal effects is not simply related to energy density of the laser but strongly related to the speed of the formation, which can be measured by the ICCD camera. The similar tendency was also obtained for other materials, which are important for the fabrication of ICs (Al, Cu, SiO2 and acrylic resin).

Measurement of ventricular function by ECG gating during atrial fibrillation

International Nuclear Information System (INIS)

Bacharach, S.L.; Green, M.V.; Bonow, R.O.; Findley, S.L.; Ostrow, H.G.; Johnston, G.S.

1981-01-01

The assumptions necessary to perform ECG-gated cardiac studies are seemingly not valid for patients in atrial fibrillation (AF). To evaluate the effect of AF on equilibrium gated scintigraphy, beat-by-beat measurements of left-ventricular function were made on seven subjects in AF (mean heart rate 64 bpm), using a high-efficiency nonimaging detector. The parameters evaluated were ejection fraction (EF), time to end-systole (TES), peak rates of ejection and filling (PER,PFR), and their times of occurrence (TPER, TPFR). By averaging together single-beat values of EF, PER, etc., it was possible to determine the true mean values of these parameters. The single-beam mean values were compared with the corresponding parameters calculated from one ECG-gated time-activity curve (TAC) obtained by superimposing all the single-beat TACs irrespective of their length. For this population with slow heart rates, we find that the values for EF, etc., produced from ECG-gated time-activity curves, are very similar to those obtained from the single-beat data. Thus use of ECG gating at low heart rates may allow reliable estimation of average cardiac function even in subjects with AF

Arginine side chain interactions and the role of arginine as a gating charge carrier in voltage sensitive ion channels

Science.gov (United States)

Armstrong, Craig T.; Mason, Philip E.; Anderson, J. L. Ross; Dempsey, Christopher E.

2016-02-01

Gating charges in voltage-sensing domains (VSD) of voltage-sensitive ion channels and enzymes are carried on arginine side chains rather than lysine. This arginine preference may result from the unique hydration properties of the side chain guanidinium group which facilitates its movement through a hydrophobic plug that seals the center of the VSD, as suggested by molecular dynamics simulations. To test for side chain interactions implicit in this model we inspected interactions of the side chains of arginine and lysine with each of the 19 non-glycine amino acids in proteins in the protein data bank. The arginine guanidinium interacts with non-polar aromatic and aliphatic side chains above and below the guanidinium plane while hydrogen bonding with polar side chains is restricted to in-plane positions. In contrast, non-polar side chains interact largely with the aliphatic part of the lysine side chain. The hydration properties of arginine and lysine are strongly reflected in their respective interactions with non-polar and polar side chains as observed in protein structures and in molecular dynamics simulations, and likely underlie the preference for arginine as a mobile charge carrier in VSD.

A split accumulation gate architecture for silicon MOS quantum dots

Science.gov (United States)

Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Charge collection and charge pulse formation in highly irradiated silicon planar detectors

International Nuclear Information System (INIS)

Dezillie, B.; Li, Z.; Eremin, V.

1998-06-01

The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V fd ), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V fd *, which is the full depletion voltage traditionally determined by the extrapolation of the fast component amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V fd ) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V fd for highly irradiated detectors

Extraction method of interfacial injected charges for SiC power MOSFETs

Science.gov (United States)

Wei, Jiaxing; Liu, Siyang; Li, Sheng; Song, Haiyang; Chen, Xin; Li, Ting; Fang, Jiong; Sun, Weifeng

2018-01-01

An improved novel extraction method which can characterize the injected charges along the gate oxide interface for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. According to the different interface situations of the channel region and the junction FET (JFET) region, the gate capacitance versus gate voltage (Cg-Vg) curve of the device can be divided into three relatively independent parts, through which the locations and the types of the charges injected in to the oxide above the interface can be distinguished. Moreover, the densities of these charges can also be calculated by the amplitudes of the shifts in the Cg-Vg curve. The correctness of this method is proved by TCAD simulations. Moreover, experiments on devices stressed by unclamped-inductive-switching (UIS) stress and negative bias temperature stress (NBTS) are performed to verify the validity of this method.

Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Characteristics of image converters and image intensifiers

International Nuclear Information System (INIS)

Gurvich, A.M.; Shamanov, A.A.; Rozenberg, A.M.; Fajnberg, V.S.; Kavtorova, V.P.; Salyuk, L.V.; Yakovleva, F.B.

1978-01-01

The characteristics of image converters and image intensifiers, which determine the range of the X-radiation dose rates used and the image quality, are considered. The equations for calculating the requirements to be imposed on the separate intensifier elements from known parameters of other elements with an allowance for the nonlinearity of the television system and the role of fluctuation in the space distribution of X-radiation quanta are given

Charge pulse preamplifier

International Nuclear Information System (INIS)

Libs, Gerard.

1973-01-01

A charge pulse preamplifier with very low background noise is described. The inlet stage of that preamplifier comprises a cooled field-effect transistor receiving the signal to be amplified at its gate input. Preferably, the charge resistor of said transistor is a field effect transistor, the source inlet of which is connected to the drain inlet of the former transistor through a self-induction coil and a resistor mounted in series. This can be applied to the treatment of the signals delivered by a particle detector in the form of a semi-conductor [fr

Suppression of chaos at slow variables by rapidly mixing fast dynamics

Science.gov (United States)

Abramov, R.

2012-04-01

One of the key questions about chaotic multiscale systems is how the fast dynamics affects chaos at the slow variables, and, therefore, impacts uncertainty and predictability of the slow dynamics. Here we demonstrate that the linear slow-fast coupling with the total energy conservation property promotes the suppression of chaos at the slow variables through the rapid mixing at the fast variables, both theoretically and through numerical simulations. A suitable mathematical framework is developed, connecting the slow dynamics on the tangent subspaces to the infinite-time linear response of the mean state to a constant external forcing at the fast variables. Additionally, it is shown that the uncoupled dynamics for the slow variables may remain chaotic while the complete multiscale system loses chaos and becomes completely predictable at the slow variables through increasing chaos and turbulence at the fast variables. This result contradicts the common sense intuition, where, naturally, one would think that coupling a slow weakly chaotic system with another much faster and much stronger mixing system would result in general increase of chaos at the slow variables.

Electronic States of High-k Oxides in Gate Stack Structures

Science.gov (United States)

Zhu, Chiyu

In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

Decoherence dynamics of a charge qubit coupled to the noise bath

International Nuclear Information System (INIS)

Yang Qin-Ying; Liang Bao-Long; Wang Ji-Suo

2013-01-01

By virtue of the canonical quantization method, we present a quantization scheme for a charge qubit based on the superconducting quantum interference device (SQUID), taking the self-inductance of the loop into account. Under reasonable short-time approximation, we study the effect of decoherence in the ohmic case by employing the response function and the norm. It is confirmed that the decoherence time, which depends on the parameters of the circuit components, the coupling strength, and the temperature, can be as low as several picoseconds, so there is enough time to record the information

Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template

International Nuclear Information System (INIS)

Miura, Atsushi; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi; Tsukamoto, Rikako; Yoshii, Shigeo

2008-01-01

We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co 3 O 4 ) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented

Heralded quantum controlled-phase gates with dissipative dynamics in macroscopically distant resonators

Science.gov (United States)

Qin, Wei; Wang, Xin; Miranowicz, Adam; Zhong, Zhirong; Nori, Franco

2017-07-01

Heralded near-deterministic multiqubit controlled-phase gates with integrated error detection have recently been proposed by Borregaard et al. [Phys. Rev. Lett. 114, 110502 (2015), 10.1103/PhysRevLett.114.110502]. This protocol is based on a single four-level atom (a heralding quartit) and N three-level atoms (operational qutrits) coupled to a single-resonator mode acting as a cavity bus. Here we generalize this method for two distant resonators without the cavity bus between the heralding and operational atoms. Specifically, we analyze the two-qubit controlled-Z gate and its multiqubit-controlled generalization (i.e., a Toffoli-like gate) acting on the two-lowest levels of N qutrits inside one resonator, with their successful actions being heralded by an auxiliary microwave-driven quartit inside the other resonator. Moreover, we propose a circuit-quantum-electrodynamics realization of the protocol with flux and phase qudits in linearly coupled transmission-line resonators with dissipation. These methods offer a quadratic fidelity improvement compared to cavity-assisted deterministic gates.

Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

International Nuclear Information System (INIS)

Qian Cong; Zhang Zhengxuan; Zhang Feng; Lin Chenglu

2008-01-01

In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on the wafer implanted with Si + and then annealed in N 2 , and B transistors are made on the wafer without implantation and annealing. It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift ΔV th than B transistors under X-ray total close irradiation. Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation, showing that the reduced ΔV th for A transistors is mainly due to its less build-up of oxide charge than B transistors. Photo-luminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose. This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation, and thus reduce the threshold voltage negative shift. (authors)

Single-atom gating and magnetic interactions in quantum corrals

Energy Technology Data Exchange (ETDEWEB)

Ngo, Anh T.; Kim, Eugene H.; Ulloa, Sergio E.

2017-04-01

Single-atom gating, achieved by manipulation of adatoms on a surface, has been shown in experiments to allow precise control over superposition of electronic states in quantum corrals. Using a Green's function approach, we demonstrate theoretically that such atom gating can also be used to control the coupling between magnetic degrees of freedom in these systems. Atomic gating enables control not only on the direct interaction between magnetic adatoms, but also over superpositions of many-body states which can then control long distance interactions. We illustrate this effect by considering the competition between direct exchange between magnetic impurities and the Kondo screening mediated by the host electrons, and how this is affected by gating. These results suggest that both magnetic and nonmagnetic single-atom gating may be used to investigate magnetic impurity systems with tailored interactions, and may allow the control of entanglement of different spin states.

Charge asymmetry ratio as a probe of quark flavour couplings of resonant particles at the LHC

International Nuclear Information System (INIS)

Kom, Chun-Hay; Stirling, W.J.

2011-01-01

We show how a precise knowledge of parton distribution functions, in particular those of the u and d quarks, can be used to constrain a certain class of New Physics models in which new heavy charged resonances couple to quarks and leptons. We illustrate the method by considering a left-right symmetric model with a W' from a SU(2) R gauge sector produced in quark-antiquark annihilation and decaying into a charged lepton and a heavy Majorana neutrino. We discuss a number of quark and lepton mixing scenarios, and simulate both signals and backgrounds in order to determine the size of the expected charge asymmetry. We show that various quark-W' mixing scenarios can indeed be constrained by charge asymmetry measurements at the LHC, particularly at √(s)=14 TeV. (orig.)

Slow sedimentation and deformability of charged lipid vesicles.

Directory of Open Access Journals (Sweden)

Iván Rey Suárez

Full Text Available The study of vesicles in suspension is important to understand the complicated dynamics exhibited by cells in in vivo and in vitro. We developed a computer simulation based on the boundary-integral method to model the three dimensional gravity-driven sedimentation of charged vesicles towards a flat surface. The membrane mechanical behavior was modeled using the Helfrich Hamiltonian and near incompressibility of the membrane was enforced via a model which accounts for the thermal fluctuations of the membrane. The simulations were verified and compared to experimental data obtained using suspended vesicles labelled with a fluorescent probe, which allows visualization using fluorescence microscopy and confers the membrane with a negative surface charge. The electrostatic interaction between the vesicle and the surface was modeled using the linear Derjaguin approximation for a low ionic concentration solution. The sedimentation rate as a function of the distance of the vesicle to the surface was determined both experimentally and from the computer simulations. The gap between the vesicle and the surface, as well as the shape of the vesicle at equilibrium were also studied. It was determined that inclusion of the electrostatic interaction is fundamental to accurately predict the sedimentation rate as the vesicle approaches the surface and the size of the gap at equilibrium, we also observed that the presence of charge in the membrane increases its rigidity.

A gating grid driver for time projection chambers

Energy Technology Data Exchange (ETDEWEB)

Tangwancharoen, S.; Lynch, W.G.; Barney, J.; Estee, J. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Shane, R. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Tsang, M.B., E-mail: tsang@nscl.msu.edu [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Zhang, Y. [Department of Physics, Tsinghua University, Beijing 100084 (China); Isobe, T.; Kurata-Nishimura, M. [RIKEN Nishina Center, Hirosawa 2-1, Wako, Saitama 351-0198 (Japan); Murakami, T. [Department of Physics, Kyoto University, Kita-shirakawa, Kyoto 606–8502 (Japan); Xiao, Z.G. [Department of Physics, Tsinghua University, Beijing 100084 (China); Zhang, Y.F. [College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China)

2017-05-01

A simple but novel driver system has been developed to operate the wire gating grid of a Time Projection Chamber (TPC). This system connects the wires of the gating grid to its driver via low impedance transmission lines. When the gating grid is open, all wires have the same voltage allowing drift electrons, produced by the ionization of the detector gas molecules, to pass through to the anode wires. When the grid is closed, the wires have alternating higher and lower voltages causing the drift electrons to terminate at the more positive wires. Rapid opening of the gating grid with low pickup noise is achieved by quickly shorting the positive and negative wires to attain the average bias potential with N-type and P-type MOSFET switches. The circuit analysis and simulation software SPICE shows that the driver restores the gating grid voltage to 90% of the opening voltage in less than 0.20 µs, for small values of the termination resistors. When tested in the experimental environment of a time projection chamber larger termination resistors were chosen so that the driver opens the gating grid in 0.35 µs. In each case, opening time is basically characterized by the RC constant given by the resistance of the switches and terminating resistors and the capacitance of the gating grid and its transmission line. By adding a second pair of N-type and P-type MOSFET switches, the gating grid is closed by restoring 99% of the original charges to the wires within 3 µs.

Exocytosis from chromaffin cells: hydrostatic pressure slows vesicle fusion

Science.gov (United States)

Stühmer, Walter

2015-01-01

Pressure affects reaction kinetics because chemical transitions involve changes in volume, and therefore pressure is a standard thermodynamic parameter to measure these volume changes. Many organisms live in environments at external pressures other than one atmosphere (0.1 MPa). Marine animals have adapted to live at depths of over 7000 m (at pressures over 70 MPa), and microorganisms living in trenches at over 110 MPa have been retrieved. Here, kinetic changes in secretion from chromaffin cells, measured as capacitance changes using the patch-clamp technique at pressures of up to 20 MPa are presented. It is known that these high pressures drastically slow down physiological functions. High hydrostatic pressure also affects the kinetics of ion channel gating and the amount of current carried by them, and it drastically slows down synaptic transmission. The results presented here indicate a similar change in volume (activation volume) of 390 ± 57 Å3 for large dense-core vesicles undergoing fusion in chromaffin cells and for degranulation of mast cells. It is significantly larger than activation volumes of voltage-gated ion channels in chromaffin cells. This information will be useful in finding possible protein conformational changes during the reactions involved in vesicle fusion and in testing possible molecular dynamic models of secretory processes. PMID:26009771

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Science.gov (United States)

Ferraro, E.; Fanciulli, M.; De Michielis, M.

2018-06-01

The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications. Its advantages are in terms of fabrication, control and manipulation in view of implementation of fast single and two-qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.

The Calcium-Activated Slow AHP: Cutting Through the Gordian Knot

Directory of Open Access Journals (Sweden)

Rodrigo eAndrade

2012-10-01

Full Text Available The phenomenon known as the slow afterhyperpolarization (sAHP was originally described more than 30 years ago in pyramidal cells as a slow, Ca2+-dependent afterpotential controlling spike frequency adaptation. Subsequent work showed that similar sAHPs were widely expressed in the brain and were mediated by a Ca2+-activated potassium current that was voltage independent, insensitive to most potassium channel blockers, and strongly modulated by neurotransmitters. However the molecular basis for this current has remained poorly understood. The sAHP was initially imagined to reflect the activation of a potassium channel directly gated by Ca2+ but recent studies have begun to question this idea. The sAHP is distinct from the Ca2+-dependent fast and medium AHPs in that it appears to sense cytoplasmic [Ca2+]i and recent evidence implicates proteins of the neuronal calcium sensor family as diffusible cytoplasmic Ca2+ sensors for the sAHP. Translocation of Ca2+-bound sensor to the plasma membrane would then be an intermediate step between Ca2+ and the sAHP channels. Parallel studies strongly suggest that the sAHP current is carried by different potassium channel types depending on the cell type. Finally, the sAHP current is dependent on membrane PtdIns(4,5P2 and Ca2+ appears to gate this current by increasing PtdIns(4,5P2 levels. Because membrane PtdIns(4,5P2 is essential for the activity of many potassium channels, these finding have led us to hypothesize that the sAHP reflects a transient Ca2+-induced increase in the local availability of PtdIns(4,5P2 which then activates a variety of potassium channels. If this view is correct, the sAHP current would not represent a unitary ionic current but the embodiment of a generalized potassium channel gating mechanism. This model can potentially explain the cardinal features of the sAHP, including its cellular heterogeneity, slow kinetics, dependence on cytoplasmic [Ca2+], high temperature-dependence, and

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

International Nuclear Information System (INIS)

Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

2014-01-01

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

Energy Technology Data Exchange (ETDEWEB)

Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

2014-01-06

An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.