Compressive deformation of liquid phase-sintered porous silicon carbide ceramics

Directory of Open Access Journals (Sweden)

Taro Shimonosono

2014-12-01

Full Text Available Porous silicon carbide ceramics were fabricated by liquid phase sintering with 1 wt% Al2O3–1 wt% Y2O3 additives during hot-pressing at 1400–1900 °C. The longitudinal strain at compressive fracture increased at a higher porosity and was larger than the lateral strain. The compressive Young's modulus and the strain at fracture depended on the measured direction, and increased with the decreased specific surface area due to the formation of grain boundary. However, the compressive strength and the fracture energy were not sensitive to the measured direction. The compressive strength of a porous SiC compact increased with increasing grain boundary area. According to the theoretical modeling of the strength–grain boundary area relation, it is interpreted that the grain boundary of a porous SiC compact is fractured by shear deformation rather than by compressive deformation.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Microstructure and properties of sintered silicon carbides fabricated by different methods

International Nuclear Information System (INIS)

Maruyama, Tadashi; Kitamura, Hideya; Iseki, Takayoshi

1986-01-01

Studies were made of effects of fabrication methods on the properties and microstructure of sintered silicon carbides. The specimens used in this investigation were three kinds of commercially available SiC bodies which were fabricated by reaction bonding, pressureless sintering and hot-pressing. The hot-pressed SiC contained a small amount of BeO. Measurements were carried out on density, the polytype by X-ray diffraction method and 4-point bend strength. Microstructural observation was also carried out using an optical microscope, a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results of density measurement showed that the open porosities of three specimens were negligibly small and that the density of the hot pressed SiC had nearly the theoretical density. The measurement of 4-point bend strength indicated that the reaction bonded SiC had the highest value and the hot-pressed SiC the lowest. The analysis of the polytype indicated that all the specimens consisted mainly of α-SiC of 6 H type. In the reaction bonded SiC, about 11 % of 3 C type (β-SiC) and 9 % of free Si were recognized. The average grain diameter and fracture mode of each specimen were determined from observation with an optical microscope and SEM. In the hot-pressed SiC, the fracture occurred mainly at grain boundaries, whereas it occurred mostly in grains in the reaction bonded and pressureless sintered SiC. A lot of stacking faults were observed in all the specimens with a TEM. In addition, small closed pores were often recognized in the pressureless sintered SiC. In the hot-pressed SiC, a contrast originated from strain field within grains was observed, and dislocations near grain boundaries were a characteristic feature of this material. Small short partial dislocations accompanied by stacking fault were often observed in the reaction bonded SiC. (author)

Boric oxide or boric acid sintering aid for sintering ceramics

International Nuclear Information System (INIS)

Lawler, H.A.

1979-01-01

The invention described relates to the use of liquid sintering aid in processes involving sintering of ceramic materials to produce dense, hard articles having industrial uses. Although the invention is specifically discussed in regard to compositions containing silicon carbide as the ceramic material, other sinterable carbides, for example, titanium carbide, may be utilized as the ceramic material. A liquid sintering aid for densifying ceramic material is selected from solutions of H 3 BO 3 , B 2 O 3 and mixtures of these solutions. In sintering ceramic articles, e.g. silicon carbide, a shaped green body is formed from a particulate ceramic material and a resin binder, and the green body is baked at a temperature of 500 to 1000 0 C to form a porous body. The liquid sintering aid of B 2 O 3 and/or H 3 BO 3 is then dispersed through the porous body and the treated body is sintered at a temperature of 1900 to 2200 0 C to produce the sintered ceramic article. (U.K.)

Effect of hydrogen on the microstructure of silicon carbide

International Nuclear Information System (INIS)

Fischman, G.S.

1985-01-01

The effect of hydrogenation on the microstructure of a pressureless sintered silicon carbide was studied. Samples which were annealed in a 40:60 mole % H 2 :Ar atmosphere at 1400 0 C for 50 hours were microstructurally compared with unannealed samples and samples that had been annealed in a similar manner but using an argon atmosphere. The results were also compared with microstructural results obtained from in situ studies using both hydrogen and argon atmospheres. These results were compared with a thermodynamic model which was constructed using a free energy minimization technique. The observed effects of hydrogenation were surface decarburization and amorphization throughout the silicon carbide material. Other observations include the thermally induced growth of microcrystalline silicon and accelerated amorphization around the silicon microcrystals in samples used in hydrogen in situ studies. An analysis of the microstructure of the reference material was also performed

Oxidation of mullite-zirconia-alumina-silicon carbide composites

International Nuclear Information System (INIS)

Baudin, C.; Moya, J.S.

1990-01-01

This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

Comparative sinterability of combustion synthesized and commercial titanium carbides

International Nuclear Information System (INIS)

Manley, B.W.

1984-11-01

The influence of various parameters on the sinterability of combustion synthesized titanium carbide was investigaged. Titanium carbide powders, prepared by the combustion synthesis process, were sintered in the temperature range 1150 to 1600 0 C. Incomplete combustion and high oxygen contents were found to be the cause of reduced shrinkage during sintering of the combustion syntheized powders when compared to the shrinkage of commercial TiC. Free carbon was shown to inhibit shrinkage. The activation energy for sintering was found to depend on stoichiometry (C/Ti). With decreasing C/Ti, the rate of sintering increased. 29 references, 16 figures, 13 tables

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Silicon carbide hollow fiber membranes: obtainment and characterization; Membranas de fibra oca de carbeto de silicio: obtencao e caracterizacao

Energy Technology Data Exchange (ETDEWEB)

Oliveira, S.S.L.; Ferreira, R.S.B.; Araujo, B.A.; Medeiros, K.M.; Lucena, H.L.; Araujo, E.M., E-mail: sandriely_sonaly@hotmail.com [Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais

2016-07-01

Silicon carbide is a promising material for the production of membranes due to its high melting temperature, thermal shock resistance, excellent mechanical and chemical stability. So, this study aims to characterize silicon carbide membranes in order to apply them in the separation of oil-water. A solution (SiC + PES + 1-Methyl- 2-Pyrrolidone) and through the extrusion technique by immersion precipitation membranes were obtained with hollow fiber geometry was prepared. And then sintered at 1500 ° C. For the characterization analyzes were made XRD, FTIR and SEM to evaluate the morphology and composition of the membranes obtained before and after sintering. (author)

Joining elements of silicon carbide

International Nuclear Information System (INIS)

Olson, B.A.

1979-01-01

A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

Microstructural evaluation of the NbC-20Ni cemented carbides during sintering

International Nuclear Information System (INIS)

Rodrigues, D.; Cannizza, E.

2016-01-01

Full text: Fine carbides in a metallic matrix (binder) form the microstructure of the cemented carbides. Grain size and binder content are the main variables to adjust hardness and toughness. These products are produced by Powder Metallurgy, and traditional route involves mixing carbides with binder by high energy milling, pressing and sintering. During sintering, a liquid phase promotes densification, and a final relative density higher than 99% is expected. Sintering is carried out at high temperatures, and dissolution of the carbides changes the chemical composition of the binder. To control grain growth of the main carbide, which reduces hardness, small quantities of secondary carbides are used. These additives limit dissolution and precipitation of the main carbides reducing the final grain size. This paper focused the structural and chemical evolution during sintering using NbC-20Ni cermets. Mixtures of very fine NbC carbides and carbonyl Ni powders were produce by intense milling. These mixtures were pressed using uniaxial pressures from 50 to 200MPa. Shrinkage was evaluated using dilatometric measurements under an atmosphere of dynamic argon. Samples were also sintered under vacuum in high temperature industrial furnace. The sintered samples were characterized in terms of density hardness, toughness and microstructure. DRX was the main tool used to evaluate the structural evolution of the binder. In situ chemical analysis helped to understand the dissolution mechanisms. (author)

Liquid phase sintering of carbides using a nickel-molybdenum alloy

International Nuclear Information System (INIS)

Barranco, J.M.; Warenchak, R.A.

1987-01-01

Liquid phase vacuum sintering was used to densify four carbide groups. These were titanium carbide, tungsten carbide, vanadium carbide, and zirconium carbide. The liquid phase consisted of nickel with additions of molybdenum of from 6.25 to 50.0 weight percent at doubling increments. The liquid phase or binder comprised 10, 20, and 40 percent by weight of the pressed powders. The specimens were tested using 3 point bending. Tungsten carbide showed the greatest improvement in bend rupture strength, flexural modulus, fracture energy and hardness using 20 percent binder with lesser amounts of molybdenum (6.25 or 12.5 wt %) added to nickel compared to pure nickel. A refinement in the carbide microstructure and/or a reduction in porosity was seen for both the titanium and tungsten carbides when the alloy binder was used compared to using the nickel alone. Curves depicting the above properties are shown for increasing amounts of molybdenum in nickel for each carbide examined. Loss of binder phase due to evaporation was experienced during heating in vacuum at sintering temperatures. In an effort to reduce porosity, identical specimens were HIP processed at 15 ksi and temperatures averaging 110 C below the sintering g temperature. The tungsten carbide and titanium carbide series containing 80 and 90 weight percent carbide phase respectively showed improvement properties after HIP while properties decreased for most other compositions

Crack propagation and fracture in silicon carbide

International Nuclear Information System (INIS)

Evans, A.G.; Lange, F.F.

1975-01-01

Fracture mechanics and strength studies performed on two silicon carbides - a hot-pressed material (with alumina) and a sintered material (with boron) - have shown that both materials exhibit slow crack growth at room temperature in water, but only the hot-pressed material exhibits significant high temperature slow crack growth (1000 to 1400 0 C). A good correlation of the observed fracture behaviour with the crack growth predicted from the fracture mechanics parameters shows that effective failure predictions for this material can be achieved using macro-fracture mechanics data. (author)

Non-pressurized sintered silicon carbide with titanium carbide reinforcement

International Nuclear Information System (INIS)

Adler, J.

1992-01-01

A non-pressurized compression of SiC-TiC composite materials can be achieved via liquid phase sintering by the application of oxidic additives. Materials with TiC proportions up to 40% by volume of TiC and densities of 97 to 98% TD were produced at sintering temperatures around 1875 C. With SiC sintered in the liquid phase an increase of toughness at fracture of 80% compared with conventionally non-pressurized sintered SiC was achieved with B/C additive. No further increase could be achieved by the addition of TiC particles. However, the oxidation resistance at 1200 C was worsened. (orig.) [de

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

International Nuclear Information System (INIS)

Ruddy, Frank H.; Seidel, John G.

2007-01-01

Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 deg. C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137 Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress

Method of fabricating porous silicon carbide (SiC)

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Investigations on the conditions for obtaining high density boron carbide by sintering

International Nuclear Information System (INIS)

Kislyj, P.S.; Grabtschuk, B.L.

1975-01-01

The results of investigations on kinetics of condensation and mechanisms of mass transfer in the process of sintering of technical, chemically pure and synthesized boron carbide are generalized. Laws on boron carbide densification depending upon temperature, time of isothermic endurance, thermal speed, size of powder particles and variable composition in homogeneity are determined. From the results obtained on condensation kinetics and special experiments on studying the changes in properties after heating under different conditions, the role of dislocation and diffusion processes in mass transfer during boron carbide sintering is exposed. The properties of sintered boron carbide are 15-20% lower than the properties of high-pressed one, that is conditioned by intercrystallite distortion of the first one and transcrystallite of the second one

Observations on infiltration of silicon carbide compacts with an aluminium alloy

Science.gov (United States)

Asthana, R.; Rohatgi, P. K.

1992-01-01

The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

Liquid phase sintered SiC. Processing and transformation controlled microstructure tailoring

Directory of Open Access Journals (Sweden)

V.A. Izhevskyi

2000-10-01

Full Text Available Microstructure development and phase formation processes during sintering of silicon carbide based materials with AlN-Y2O3, AlN-Yb2O3, and AlN-La2O3 sintering additives were investigated. Densification of the materials occurred by liquid-phase sintering mechanism. Proportion of alpha- and beta-SiC powders in the initial mixtures was a variable parameter, while the molar ratio of AlN/RE2O3, and the total amount of additives (10 vol. % were kept constant. Shrinkage behavior during sintering in interrelation with the starting composition of the material and the sintering atmosphere was investigated by high temperature dilatometry. Kinetics of b-SiC to a-SiC phase transformation during post-sintering heat treatment at temperatures 1900-1950 °C was studied, the degree of phase transformation being determined by quantitative x-ray analysis using internal standard technique. Evolution of microstructure resulting from beta-SiC to alpha-SiC transformation was followed up by scanning electron microscopy on polished and chemically etched samples. Transformation-controlled grain growth mechanism similar to the one observed for silicon nitride based ceramics was established. Possibility of in-situ platelet reinforced dense SiC-based ceramics fabrication with improved mechanical properties by means of sintering was shown.

The effects of surface finish and grain size on the strength of sintered silicon carbide

Science.gov (United States)

You, Y. H.; Kim, Y. W.; Lee, J. G.; Kim, C. H.

1985-01-01

The effects of surface treatment and microstructure, especially abnormal grain growth, on the strength of sintered SiC were studied. The surfaces of sintered SiC were treated with 400, 800 and 1200 grit diamond wheels. Grain growth was induced by increasing the sintering times at 2050 C. The beta to alpha transformation occurred during the sintering of beta-phase starting materials and was often accompanied by abnormal grain growth. The overall strength distributions were established using Weibull statistics. The strength of the sintered SiC is limited by extrinsic surface flaws in normal-sintered specimens. The finer the surface finish and grain size, the higher the strength. But the strength of abnormal sintering specimens is limited by the abnormally grown large tabular grains. The Weibull modulus increases with decreasing grain size and decreasing grit size for grinding.

Microstructure evolution of SiC sintered bodies activated by boron and carbon

International Nuclear Information System (INIS)

Gubernat, A.; Stobierski, L.

2003-01-01

Investigation on the role of sintering aids on densification of silicon carbide indicate that boron and carbon modify mass transport mechanisms. It leads to changes of microstructure of polycrystalline silicon carbide. In the present work the influence of varying proportions of sintering aids on the material microstructure was studied. The microstructural changes were related to the changes of the selected properties of the resulting materials. (author)

Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

NARCIS (Netherlands)

Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

2002-01-01

Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

Directory of Open Access Journals (Sweden)

Xiaoyong Ren

2014-01-01

Full Text Available Ultrafine tungsten carbide-nickel (WC-Ni cemented carbides with varied fractions of silicon carbide (SiC nanowhisker (0–3.75 wt.% were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC and tantalum carbide (TaC as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker.

Effect of metallic coating on the properties of copper-silicon carbide composites

Science.gov (United States)

Chmielewski, M.; Pietrzak, K.; Teodorczyk, M.; Nosewicz, S.; Jarząbek, D.; Zybała, R.; Bazarnik, P.; Lewandowska, M.; Strojny-Nędza, A.

2017-11-01

In the presented paper a coating of SiC particles with a metallic layer was used to prepare copper matrix composite materials. The role of the layer was to protect the silicon carbide from decomposition and dissolution of silicon in the copper matrix during the sintering process. The SiC particles were covered by chromium, tungsten and titanium using Plasma Vapour Deposition method. After powder mixing of components, the final densification process via Spark Plasma Sintering (SPS) method at temperature 950 °C was provided. The almost fully dense materials were obtained (>97.5%). The microstructure of obtained composites was studied using scanning electron microscopy as well as transmission electron microscopy. The microstructural analysis of composites confirmed that regardless of the type of deposited material, there is no evidence for decomposition process of silicon carbide in copper. In order to measure the strength of the interface between ceramic particles and the metal matrix, the micro tensile tests have been performed. Furthermore, thermal diffusivity was measured with the use of the laser pulse technique. In the context of performed studies, the tungsten coating seems to be the most promising solution for heat sink application. Compared to pure composites without metallic layer, Cu-SiC with W coating indicate the higher tensile strength and thermal diffusitivy, irrespective of an amount of SiC reinforcement. The improvement of the composite properties is related to advantageous condition of Cu-SiC interface characterized by well homogenity and low porosity, as well as individual properties of the tungsten coating material.

Mechanical characteristics of microwave sintered silicon carbide

Indian Academy of Sciences (India)

Unknown

sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered .... product, could be due to oxidation of SiC, e.g. 50% weight gain of a green SiC sample ... because, the charging current is 90° advanced in phase, ideally, with respect to the ...

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Oxide film assisted dopant diffusion in silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

2010-10-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Oxide film assisted dopant diffusion in silicon carbide

International Nuclear Information System (INIS)

Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

2010-01-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Spark plasma sintering of SiC and ZrC

Energy Technology Data Exchange (ETDEWEB)

Guillard, F.; Galy, J. [CEMES-CNRS, 29 rue Jeanne Marvig BP94347 31055 Toulouse Cx 4 (France); Allemand, A. [CEA Saclay, DRT/DTEN/S3ME/LTMEx, 91191 Gif-sur-Yvette (France)

2005-07-01

Spark plasma sintering a relative new technique allows sintering material powders in a reduced time compared to formal process of densification. In order to analyse densification mechanisms and to compare with hot isostatic pressing technique, pellets of silicon carbide and zirconium carbide were sintered by HIP and by SPS from 1750 to 1950 deg. C, with different pressures (50 to 75 MPa) and various holding times (0 to 10 min). Their densities were determined and their microstructures were SEM analysed. (authors)

The diffusion bonding of silicon carbide and boron carbide using refractory metals

International Nuclear Information System (INIS)

Cockeram, B.V.

1999-01-01

Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

Composites comprising silicon carbide fibers dispersed in magnesia-aluminate matrix and fabrication thereof and of other composites by sinter forging

Science.gov (United States)

Panda, Prakash C.; Seydel, Edgar R.; Raj, Rishi

1989-10-03

A novel ceramic-ceramic composite of a uniform dispersion of silicon carbide fibers in a matrix of MgO.multidot.nAl.sub.2 O.sub.3 wherein n ranges from about 1 to about 4.5, said composite comprising by volume from 1 to 50% silicon carbide fibers and from 99 to 50% MgO.multidot.nAl.sub.2 O.sub.3. The composite is readily fabricated by forming a powder comprising a uniform dispersion of silicon carbide fibers in poorly crystalline phase comprising MgO and Al.sub.2 O.sub.3 in a mole ratio of n and either (a) hot pressing or preferably (b) cold pressing to form a preform and then forging utilizing a temperature in the range of 1100.degree. C. to 1900.degree. C. and a strain rate ranging from about 10.sup.-5 seconds .sup.-1 to about 1 seconds .sup.-1 so that surfaces cracks do not appear to obtain a shear deformation greater than 30%.

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Science.gov (United States)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Preparation and mechanical properties of liquid-phase sinterd silicon carbide; Herstellung und mechanische Eigenschaften von fluessigphasengesintertem Siliziumkarbid

Energy Technology Data Exchange (ETDEWEB)

Wiedmann, I.

1998-12-01

Liquid-phase sintered silicon carbide ceramics, LPS-SiC, were prepared, and the influence of structure and chemical secondary phase composition on the mechanical properties was investigated in order to identify LPS-SiC materials which can be produced reproducibly and with low loss of mass by simple techniques, i.e. without powder bed or encapsulation. Their profile of characteristics should be superior to conventional solid-phase sintered SiC and should be comparable with liquid-phase sintered silicon nitride ceramics. [Deutsch] In der vorliegenden Arbeit wurden fluessigphasengesinterte Siliziumkarbid-Keramiken, LPS-SiC, hergestellt und der Einfluss der Gefuegeausbildung und der chemischen Sekundaerphasenzusammensetzung auf die mechanischen Eigenschaften untersucht. Ziel war es, LPS-SiC-Materialien zu identifizieren, die ohne besonderen Vorkehrungen wie Pulverbett oder Einkapselung reproduzierbar und mit geringem Masseverlust hergestellt werden koennen. Das Eigenschaftsprofil sollte deutlich ueber dem von konventionell festphasengesintertem SiC liegen und vergleichbar zu fluessigphasengesinterten Siliziumnitrid-Keramiken sein. (orig.)

Development of nano-structured silicon carbide ceramics: from synthesis of the powder to sintered ceramics; Elaboration de ceramiques nanostructurees en carbure de silicium: de la synthese de la poudre a la ceramique frittee

Energy Technology Data Exchange (ETDEWEB)

Reau, A.

2008-12-15

The materials used inside future nuclear reactors will be subjected to very high temperature and neutrons flux. Silicon carbide, in the form of SiC{sub f}/SiC nano-structured composite is potentially interesting for this type of application. It is again necessary to verify the contribution of nano-structure on the behaviour of this material under irradiation. To verify the feasibility and determine the properties of the matrix, it was envisaged to produce it by powder metallurgy from SiC nanoparticles. The objective is to obtain a fully dense nano-structured SiC ceramic without additives. For that, a parametric study of the phases of synthesis and agglomeration was carried out, the objective of which is to determine the active mechanisms and the influence of the key parameters. Thus, studying the nano-powder synthesis by laser pyrolysis allowed to produce, with high production rates, homogeneous batches of SiC nanoparticles whose size can be adjusted between 15 and 90 nm. These powders have been densified by an innovating method: Spark Plasma Sintering (SPS). The study and the optimization of the key parameters allowed the densification of silicon carbide ceramic without sintering aids while preserving the nano-structure of material. The thermal and mechanical properties of final materials were studied in order to determine the influence of the microstructure on their properties. (author)

Production of silicon carbide bodies

International Nuclear Information System (INIS)

Parkinson, K.

1981-01-01

A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

High yield silicon carbide prepolymers

International Nuclear Information System (INIS)

Baney, R.H.

1982-01-01

Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

Spark plasma sintering of tantalum carbide

International Nuclear Information System (INIS)

Khaleghi, Evan; Lin, Yen-Shan; Meyers, Marc A.; Olevsky, Eugene A.

2010-01-01

A tantalum carbide powder was consolidated by spark plasma sintering. The specimens were processed under various temperature and pressure conditions and characterized in terms of relative density, grain size, rupture strength and hardness. The results are compared to hot pressing conducted under similar settings. It is shown that high densification is accompanied by substantial grain growth. Carbon nanotubes were added to mitigate grain growth; however, while increasing specimens' rupture strength and final density, they had little effect on grain growth.

Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

Science.gov (United States)

Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

2013-01-22

Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

Silicon carbide microsystems for harsh environments

CERN Document Server

Wijesundara, Muthu B J

2011-01-01

Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Boron Carbide: Stabilization of Highly-Loaded Aqueous Suspensions, Pressureless Sintering, and Room Temperature Injection Molding

Science.gov (United States)

Diaz-Cano, Andres

Boron carbide (B4C) is the third hardest material after diamond and cubic boron nitride. It's unique combination of properties makes B4C a highly valuable material. With hardness values around 35 MPa, a high melting point, 2450°C, density of 2.52 g/cm3, and high chemical inertness, boron carbide is used in severe wear components, like cutting tools and sandblasting nozzles, nuclear reactors' control rots, and finally and most common application, armor. Production of complex-shaped ceramic component is complex and represents many challenges. Present research presents a new and novel approach to produce complex-shaped B4C components. Proposed approach allows forming to be done at room temperatures and under very low forming pressures. Additives and binder concentrations are kept as low as possible, around 5Vol%, while ceramics loadings are maximized above 50Vol%. Given that proposed approach uses water as the main solvent, pieces drying is simple and environmentally safe. Optimized formulation allows rheological properties to be tailored and adjust to multiple processing approaches, including, injection molding, casting, and additive manufacturing. Boron carbide samples then were pressureless sintered. Due to the high covalent character of boron carbide, multiples sintering aids and techniques have been proposed in order to achieve high levels of densification. However, is not possible to define a clear sintering methodology based on literature. Thus, present research developed a comprehensive study on the effect of multiple sintering aids on the densification of boron carbide when pressureless sintered. Relative densities above 90% were achieved with values above 30MPa in hardness. Current research allows extending the uses and application of boron carbide, and other ceramic systems, by providing a new approach to produce complex-shaped components with competitive properties.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Simulations of Proton Implantation in Silicon Carbide (SiC)

Science.gov (United States)

2016-03-31

Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

International Nuclear Information System (INIS)

Baney, Ronald

2008-01-01

The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process

High pressure sintering (HP-HT) of diamond powders with titanium and titanium carbide

International Nuclear Information System (INIS)

Jaworska, L.

1999-01-01

Polycrystalline diamond compacts for cutting tools are mostly manufactured using high pressure sintering (HP-HT). The standard diamond compacts are prepared by diamond powders sintering with metallic binding phase. The first group of metallic binder are metals able to solve carbon - Co, Ni. The second group of metal binders are carbide forming elements - Ti, Cr, W and others. The paper describes high pressure sintering of diamond powder with titanium and nonstoichiometry titanium carbide for cutting tool application. A type of binding phase has the significant influence on microstructure and mechanical properties of diamond compacts. Very homogeneous structure was achieved in case of compacts obtained from metalized diamond where diamond-TiC-diamond connection were predominant. In the case of compacts prepared by mechanical mixing of diamond with titanium powders the obtained structure was nonhomogeneous with titanium carbide clusters. They had more diamond to diamond connections. These compacts compared to the compact made of metallized diamond have greater wear resistance. In the case of the diamond and TiC 0.92 sintering the strong bonding of TiC diamond grains was obtained. The microstructure observations for diamond with 5% wt. Ti and diamond with 5% wt. TiC 0.92 (the initial composition) compacts were performed in transmission microscope. For two type of compacts the strong bonding phase TiC without defects is creating. (author)

Influence of nanometric silicon carbide on phenolic resin composites ...

Indian Academy of Sciences (India)

Abstract. This paper presents a preliminary study on obtaining and characterization of phenolic resin-based com- posites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ...

Single-Event Effects in Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Nondestructive ultrasonic characterization of armor grade silicon carbide

Science.gov (United States)

Portune, Andrew Richard

Ceramic materials have traditionally been chosen for armor applications for their superior mechanical properties and low densities. At high strain rates seen during ballistic events, the behavior of these materials relies upon the total volumetric flaw concentration more so than any single anomalous flaw. In this context flaws can be defined as any microstructural feature which detriments the performance of the material, potentially including secondary phases, pores, or unreacted sintering additives. Predicting the performance of armor grade ceramic materials depends on knowledge of the absolute and relative concentration and size distribution of bulk heterogeneities. Ultrasound was chosen as a nondestructive technique for characterizing the microstructure of dense silicon carbide ceramics. Acoustic waves interact elastically with grains and inclusions in large sample volumes, and were well suited to determine concentration and size distribution variations for solid inclusions. Methodology was developed for rapid acquisition and analysis of attenuation coefficient spectra. Measurements were conducted at individual points and over large sample areas using a novel technique entitled scanning acoustic spectroscopy. Loss spectra were split into absorption and scattering dominant frequency regimes to simplify analysis. The primary absorption mechanism in polycrystalline silicon carbide was identified as thermoelastic in nature. Correlations between microstructural conditions and parameters within the absorption equation were established through study of commercial and custom engineered SiC materials. Nonlinear least squares regression analysis was used to estimate the size distributions of boron carbide and carbon inclusions within commercial SiC materials. This technique was shown to additionally be capable of approximating grain size distributions in engineered SiC materials which did not contain solid inclusions. Comparisons to results from electron microscopy

Mechanical alloying and sintering of nanostructured tungsten carbide-reinforced copper composite and its characterization

International Nuclear Information System (INIS)

Yusoff, Mahani; Othman, Radzali; Hussain, Zuhailawati

2011-01-01

Research highlights: → W 2 C phase was formed at short milling time while WC only appears after longer milling time. → Cu crystallite size decreased but internal strain increased with increasing milling time. → Increasing milling time induced more WC formation, thus improving the hardness of the composite. → Electrical conductivity is reduced due to powder refinement and the presence of carbide phases. -- Abstract: Elemental powders of copper (Cu), tungsten (W) and graphite (C) were mechanically alloyed in a planetary ball mill with different milling durations (0-60 h), compacted and sintered in order to precipitate hard tungsten carbide particles into a copper matrix. Both powder and sintered composite were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) and assessed for hardness and electrical conductivity to investigate the effects of milling time on formation of nanostructured Cu-WC composite and its properties. No carbide peak was detected in the powder mixtures after milling. Carbide WC and W 2 C phases were precipitated only in the sintered composite. The formation of WC began with longer milling times, after W 2 C formation. Prolonged milling time decreased the crystallite size as well as the internal strain of Cu. Hardness of the composite was enhanced but electrical conductivity reduced with increasing milling time.

An improved method of preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1979-01-01

A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Effects of lower cobalt binder concentrations in sintering of tungsten carbide

International Nuclear Information System (INIS)

Li Tao; Li Qingfa; Fuh, J.Y.H.; Yu, P.C.; Wu, C.C.

2006-01-01

Cemented tungsten carbides have received much attention because of their superior characteristics. Traditional cemented tungsten carbides usually contain 3-30 wt% binder phase. In this paper, WC with low Co concentration less than 3 wt% is studied using traditional powder metallurgy. The binder phase has tremendous effect on sinterability of WC. High sinterability and high hardness can be achieved for the WC (0.7 μm) with 0.5 wt% Co. Abnormal grain growth (AGG) is often observed in sintering WC with small amount of Co. It seems that AGG is affected by the concentration of Co and a range of Co concentrations may exist for the large amount of AGG. To control the grain size, VC is added to inhibit the grain growth of WC. It is observed that the hardness is affected by the amount of addition of VC. Controlling the ratio of C/W less than unity at low Co concentrations will result in the production of W 2 C phase. The hardness of WC-Co is affected by the amount of W 2 C phase in the sample and W 2 C is stable during the normal cooling process

Review article: silicon carbide. Structure, properties and processing Artigo revisão: carbeto de silício, estrtutura, propriedades e processamento

Directory of Open Access Journals (Sweden)

V. A. Izhevskyi

2000-03-01

Full Text Available In view of considerable interest in the development of liquid phase sintered structural and high-temperature ceramics on the base of silicon carbide, a comprehensive review of the data on structure, properties and the known methods of processing of silicon carbide seems timely. The most striking feature of silicon carbide is its polytypism, i.e. formation of a great number of different structural modifications without any change in composition. Although this feature of silicon carbide was extensively studied, no systematic up to date analysis was done. However, polytypism and the tendency of the polytypes to undergo structural transformations at working temperatures may lead to uncontrollable modification of the materials properties, and therefore needs to be fully understood. Furthermore, the recently developed liquid phase sintering technique for silicon carbide densification is of an undoubtful interest and the overview of the results achieved until present time may provide some guidelines for the ceramists.Em vista do considerável interesse no desenvolvimento de cerâmicas estruturais e para aplicações em alta temperatura, é oportuna uma revisão quanto a estrutura, propriedades e métodos conhecidos de processamento de cerâmicas a base de carbeto de silício sinterizados via fase líquida. A característica mais interessante do carbeto de silício é o seu politipismo, isto é, a formação de um grande número modificações estruturais para uma mesma composição. Embora este fenômeno venha sendo extensivamente estudado, não se tem até o momento, uma análise sistemática do mesmo, o que seria de extrema importância, uma vez que o politipismo e a tendência à transformação estrutural destes politipos em temperaturas típicas de trabalho podem levar a incontroláveis modificações nas propriedades do material. Além disso, os recentes avanços obtidos na densificação do carbeto de silício através da técnica de sinteriza

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Reaction sintering of two-dimensional silicon carbide fiber-reinforced silicon carbide composite by sheet stacking method

International Nuclear Information System (INIS)

Yoshida, Katsumi; Mukai, Hideki; Imai, Masamitsu; Hashimoto, Kazuaki; Toda, Yoshitomo; Hyuga, Hideki; Kondo, Naoki; Kita, Hideki; Yano, Toyohiko

2007-01-01

Two-dimensionally plain woven SiC fiber-reinforced SiC composite has been developed by reaction sintering using a sheet stacking method in order to further increase mechanical and thermal properties of the composite and to obtain flexibility of manufacturing process of 2D woven SiC/SiC composites which can be applied to the fabrication of larger parts. In addition, sinterability and mechanical properties of the composite were investigated. In this study, relative density of the composites was about 90-93% and a dense composite could be obtained by reaction sintering using the sheet stacking method. The bulk density and maximum bending strength of SiC/SiC composite with a C/SiC weight ratio of 0.6 were higher than that of the composite with C/SiC ratios of 0.5 or 0.7. The values were 2.9 g/cm 3 and 200 MPa, respectively. However, the composites obtained in this study fractured in almost brittle manner due to the lower fiber volume fraction

Broadband antireflective silicon carbide surface produced by cost-effective method

DEFF Research Database (Denmark)

Argyraki, Aikaterini; Ou, Yiyu; Ou, Haiyan

2013-01-01

A cost-effective method for fabricating antireflective subwavelength structures on silicon carbide is demonstrated. The nanopatterning is performed in a 2-step process: aluminum deposition and reactive ion etching. The effect, of the deposited aluminum film thickness and the reactive ion etching...... conditions, on the average surface reflectance and nanostructure landscape have been investigated systematically. The average reflectance of silicon carbide surface is significantly suppressed from 25.4% to 0.05%, under the optimal experimental conditions, in the wavelength range of 390-784 nm. The presence...... of stochastic nanostructures also changes the wetting properties of silicon carbide surface from hydrophilic (47°) to hydrophobic (108°)....

Silver diffusion through silicon carbide in microencapsulated nuclear fuels TRISO

International Nuclear Information System (INIS)

Cancino T, F.; Lopez H, E.

2013-10-01

The silver diffusion through silicon carbide is a challenge that has persisted in the development of microencapsulated fuels TRISO (Tri structural Isotropic) for more than four decades. The silver is known as a strong emitter of gamma radiation, for what is able to diffuse through the ceramic coatings of pyrolytic coal and silicon carbide and to be deposited in the heat exchangers. In this work we carry out a recount about the art state in the topic of the diffusion of Ag through silicon carbide in microencapsulated fuels and we propose the role that the complexities in the grain limit can have this problem. (Author)

A Review of Metal Injection Molding- Process, Optimization, Defects and Microwave Sintering on WC-Co Cemented Carbide

Science.gov (United States)

Shahbudin, S. N. A.; Othman, M. H.; Amin, Sri Yulis M.; Ibrahim, M. H. I.

2017-08-01

This article is about a review of optimization of metal injection molding and microwave sintering process on tungsten cemented carbide produce by metal injection molding process. In this study, the process parameters for the metal injection molding were optimized using Taguchi method. Taguchi methods have been used widely in engineering analysis to optimize the performance characteristics through the setting of design parameters. Microwave sintering is a process generally being used in powder metallurgy over the conventional method. It has typical characteristics such as accelerated heating rate, shortened processing cycle, high energy efficiency, fine and homogeneous microstructure, and enhanced mechanical performance, which is beneficial to prepare nanostructured cemented carbides in metal injection molding. Besides that, with an advanced and promising technology, metal injection molding has proven that can produce cemented carbides. Cemented tungsten carbide hard metal has been used widely in various applications due to its desirable combination of mechanical, physical, and chemical properties. Moreover, areas of study include common defects in metal injection molding and application of microwave sintering itself has been discussed in this paper.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

DC characteristics and parameters of silicon carbide high-voltage power BJTs

International Nuclear Information System (INIS)

Patrzyk, Joanna; Zarębski, Janusz; Bisewski, Damian

2016-01-01

The paper shows the static characteristics and operating parameters of the bipolar power transistors made of silicon carbide and for comparison their equivalents made of classical silicon technology. The characteristics and values of selected operating parameters with special emphasis on the effect of temperature and operating point of considered devices are discussed. Quantitative as well as qualitative differences between the characteristics of the transistor made of silicon and silicon carbide are indicated as well

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Microstructural designs of spark-plasma sintered silicon carbide ceramic scaffolds

Energy Technology Data Exchange (ETDEWEB)

Roman-Manso, B.; Pablos, A. de; Belmonte, M.; Osendi, M. I.; Miranzo, P.

2014-04-01

Concentrated ceramic inks based on (SiC) powders, with different amounts of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} as sintering aids, are developed for the adequate production of SiC scaffolds, with different patterned morphologies, by the Robocasting technique. The densification of the as-produced 3D structures, previously heat treated in air at 600 degree centigrade for the organics burn-out, is achieved with a Spark Plasma Sintering (SPS) furnace. The effects of the amount of sintering additives (7 - 20 wt. %) and the size of the SiC powders (50 nm and 0.5 {mu}m) on the processing of the inks, microstructure, hardness and elastic modulus of the sintered scaffolds, are studied. The use of nano-sized (SiC) powders significantly restricts the attainable maximum solids volume fraction of the ink (0.32 compared to 0.44 of the submicron-sized powders-based ink), involving a much larger porosity of the green ceramic bodies. Furthermore, reduced amounts of additives improve the mechanical properties of the ceramic skeleton; particularly, the stiffness. The grain size and specific surface area of the starting powders, the ink solids content, green porosity, amount of sintering additives and SPS temperatures are the main parameters to be taken into account for the production of these SiC cellular ceramics. (Author)

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

Muonium states in silicon carbide

International Nuclear Information System (INIS)

Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

1986-01-01

Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics. Materials Characterization

Science.gov (United States)

Singh, M.; Leonhardt, T. A.

1995-01-01

Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

2013-01-01

Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

2015-02-23

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

International Nuclear Information System (INIS)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

2015-01-01

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness.

Science.gov (United States)

Sun, Rongyan; Yang, Xu; Ohkubo, Yuji; Endo, Katsuyoshi; Yamamura, Kazuya

2018-02-05

In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion. However, RS-SiC is difficult to machine owing to its high hardness and chemical inertness and because it contains multiple components. To overcome the problem of the poor machinability of RS-SiC in conventional machining, the application of atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) to RS-SiC was proposed. As a highly efficient and damage-free figuring technique, AP-PCVM has been widely applied for the figuring of single-component materials, such as Si, SiC, quartz crystal wafers, and so forth. However, it has not been applied to RS-SiC since it is composed of multiple components. In this study, we investigated the AP-PCVM etching characteristics for RS-SiC by optimizing the gas composition. It was found that the different etching rates of the different components led to a large surface roughness. A smooth surface was obtained by applying the optimum gas composition, for which the etching rate of the Si component was equal to that of the SiC component.

Melting of Grey Cast Iron Based on Steel Scrap Using Silicon Carbide

Directory of Open Access Journals (Sweden)

Stojczew A.

2014-08-01

Full Text Available The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its chemical composition (30% C and 70% Si which causes significant silicon content in iron increase, the carbon deficit can be partly compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Westerheide, R.; Woetting, G.; Schmitz, H.W.

1998-07-01

The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

Doping of silicon carbide by ion implantation

International Nuclear Information System (INIS)

Gimbert, J.

1999-01-01

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

Directory of Open Access Journals (Sweden)

V. N. Kovalevsky

2010-01-01

Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

Microstructural Evaluation of Inductively Sintered Aluminum Matrix Nanocomposites Reinforced with Silicon Carbide and/or Graphene Nanoplatelets for Tribological Applications

Science.gov (United States)

Islam, Mohammad; Khalid, Yasir; Ahmad, Iftikhar; Almajid, Abdulhakim A.; Achour, Amine; Dunn, Theresa J.; Akram, Aftab; Anwar, Saqib

2018-04-01

Silicon carbide (SiC) nanoparticles (NP) and/or graphene nanoplatelets (GNP) were incorporated into the aluminum matrix through colloidal dispersion and mixing of the powders, followed by consolidation using a high-frequency induction heat sintering process. All the nanocomposite samples exhibited high densification (> 96 pct) with a maximum increase in Vickers microhardness by 92 pct relative to that of pure aluminum. The tribological properties of the samples were determined at the normal frictional forces of 10 and 50 N. At relatively low load of 10 N, the adhesive wear was found to be the predominant wear mechanism, whereas in the case of a 50 N normal load, there was significant contribution from abrasive wear possibly by hard SiC NP. From wear tests, the values for the coefficient of friction (COF) and the normalized wear rate were determined. The improvement in hardness and wear resistance may be attributed to multiple factors, including high relative density, uniform SiC and GNP dispersion in the aluminum matrix, grain refinement through GNP pinning, as well as inhibition of dislocation movement by SiC NP. The nanocomposite sample containing 10 SiC and 0.5 GNP (by wt pct) yielded the maximum wear resistance at 10 N normal load. Microstructural characterization of the nanocomposite surfaces and wear debris was performed using scanning electron microscope (SEM) and transmission electron microscope (TEM). The synergistic effect of the GNP and SiC nanostructures accounts for superior wear resistance in the aluminum matrix nanocomposites.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Novel fabrication of silicon carbide based ceramics for nuclear applications

Science.gov (United States)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

Science.gov (United States)

Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

2017-07-07

Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Enhanced optical performance of electrochemically etched porous silicon carbide

International Nuclear Information System (INIS)

Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

2013-01-01

Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

Preparation of silicon carbide/carbon fiber composites through high-temperature spark plasma sintering

Directory of Open Access Journals (Sweden)

Ehsan Ghasali

2017-12-01

Full Text Available This study discusses the potentials of spark plasma sintering (SPS integrated with high temperature process that can enable sintering of SiC/Cf composites without any sintering aids. The random distribution of carbon fibers was obtained through mixing composite components in ethanol by using a shaker mill for 10 min. The corresponding sintering process was carried out at 1900 and 2200 °C with 50 MPa pressure applied at maximum temperature. The results showed that 89 ± 0.9 and 97 ± 0.8% of the theoretical density can be obtained for sintering temperatures of 1900 and 2200 °C, respectively. The densification curves were plotted to monitor sintering behavior with punch displacement changes. The appropriate bonding between SiC particles and carbon fibers was detected using FE-SEM for sample which was sintered at 2200 °C. The clear maximum in hardness (2992 ± 33 Vickers, bending strength (427 ± 26 MPa and fracture toughness (4.2 ± 0.3 MPa m1/2 were identified for sample sintered at 2200 °C. XRD investigations supposed that SiC and carbon were the only crystalline phases in both sintered samples.

On electronic structure of polymer-derived amorphous silicon carbide ceramics

Science.gov (United States)

Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

2014-06-01

The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

Linear electro-optic effect in cubic silicon carbide

Science.gov (United States)

Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping; Spencer, Michael G.

1991-01-01

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

Emission of blue light from hydrogenated amorphous silicon carbide

Science.gov (United States)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Metallographic preparation of sintered oxides, carbides and nitrides of uranium and plutonium

International Nuclear Information System (INIS)

Martin, A.; Arles, L.

1967-12-01

We describe the methods of polishing, attack and coloring used at the section of plutonium base ceramics studies. These methods have stood the test of experience on the uranium and plutonium carbides, nitrides and carbonitrides as well on the mixed uranium and plutonium oxides. These methods have been particularly adapted to fit to the low dense and sintered samples [fr

Characterisation of silicon carbide films deposited by plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao; Wei Jiashen; Pang, A.J.

2008-01-01

The paper presents a characterisation of amorphous silicon carbide films deposited in plasma-enhanced chemical vapour deposition (PECVD) reactors for MEMS applications. The main parameter was optimised in order to achieve a low stress and high deposition rate. We noticed that the high frequency mode (13.56 MHz) gives a low stress value which can be tuned from tensile to compressive by selecting the correct power. The low frequency mode (380 kHz) generates high compressive stress (around 500 MPa) due to ion bombardment and, as a result, densification of the layer achieved. Temperature can decrease the compressive value of the stress (due to annealing effect). A low etching rate of the amorphous silicon carbide layer was noticed for wet etching in KOH 30% at 80 o C (around 13 A/min) while in HF 49% the layer is practically inert. A very slow etching rate of amorphous silicon carbide layer in XeF 2 -7 A/min- was observed. The paper presents an example of this application: PECVD-amorphous silicon carbide cantilevers fabricated using surface micromachining by dry-released technique in XeF 2

Dependence of silicon carbide coating properties on deposition parameters: preliminary report

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1980-05-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide, which acts as a pressure vessel and provides containment of metallic fission products. The silicon carbide (SiC) is deposited by the thermal decomposition of methyltrichlorosilane (CH 3 SiCl 3 or MTS) in an excess of hydrogen. The purpose of the current study is to determine how the deposition variables affect the structure and properties of the SiC layer

Silicon Carbide Corrugated Mirrors for Space Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

Silicon Carbide Power Devices and Integrated Circuits

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

Contribution to the densification study of silicon and zirconium carbides by an innovating process: the Spark Plasma Sintering; Contribution a l'etude de la densification des carbures de silicium et de zirconium par un procede innovant: le spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Allemand, A. [CEA Saclay, Dept. des Materiaux pour le Nucleaire (DEN/DMN/SRMA/LTMEx), 91 - Gif-sur-Yvette (France); Guillard, F.; Galy, J. [Centre d' Elaboration de Materiaux et d' Etudes Structurales (CEMES-CNRS), 31 - Toulouse (France)

2007-07-01

In the framework of the CPR ISMIR, the works presented here take up the results of the thesis of F. Guillard defended on december 2006. This thesis has dealt with the Spark Plasma Sintering (SPS) technique and more particularly have been studied: 1)the {beta}SiC and ZrC sintering 2)the modelling of ZrC sintering by the SPS technique and 3)the studies of the carbides/oxides interfaces carried out by SPS. Concerning the {beta}SiC and ZrC sintering: the two carbides have been sintered between 1450 and 1950 C with times periods of 10 minutes and pressures between 50 and 150 MPa. These experiments have shown that the way to apply the pressure is of major importance. Moreover, 92% of densification can be reached after 5 minutes in 1850 C for SiC. For ZrC, 95% of densification is reached as soon as 5 minutes in 1750 C. Different correlations between grains size, density and the way to apply pressure are presented. For the SPS modelling of ZrC, two existing models, taking into account the diffusion laws, are used to try to model the SPS. The results are presented and discussed. At last, the SPS allows to make interfaces starting from powders or materials previously sintered. The SiC/ZrC and ZrO{sub 2}/SiC interfaces have been studied. A microstructural study is presented as well as a technique which allows the assembling with no cracks of SiC and ZrC. (O.M.)

Influence of edge radius of sintered-carbide tip on roughness of machined surface

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Jiří Votava

2013-01-01

Full Text Available Increasing of cutting speed and thus increasing labour productivity is observed as a current trend in engineering production. This effort results to development of new cutting materials which are more capable to resist increased requirements on machined surface as well as operating life of the instrument. Nowadays, the most widely used materials used for cutting instruments are sintered carbides which are alloyed by other metals. The goal of this paper is to analyse change in quality of machined surface depending on the change of cutting conditions. For cutting operation, there were used a milling cutter high-speed steel 90 (HSS and removable sintered-carbide tips with different radius. Steel 12 050 hardened for 17 HRC was used as a machined material. Firstly, hardness of machined as well as machining materials was analysed. Further, metallographic analysis and measurement of microhardness of the individual structure phases was processed. Cutting conditions of both instruments were selected depending on the machined material. Surface roughness indicates the quality of machined surface.

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

International Nuclear Information System (INIS)

Miyoshi, K.; Buckley, D.H.

1978-04-01

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

Low temperature CVD deposition of silicon carbide

International Nuclear Information System (INIS)

Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

1991-04-01

The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

An improved method for preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1980-01-01

A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

Microstructure and thermal properties of Cu-SiC composite materials depending on the sintering technique

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Chmielewski Marcin

2017-01-01

Full Text Available The presented paper investigates the relationship between the microstructure and thermal properties of copper-silicon carbide composites obtained through hot pressing (HP and spark plasma sintering (SPS techniques. The microstructural analysis showed a better densification in the case of composites sintered in the SPS process. TEM investigations revealed the presence of silicon in the area of metallic matrix in the region close to metal-ceramic boundary. It is the product of silicon dissolving process in copper occurring at an elevated temperature. The Cu-SiC interface is significantly defected in composites obtained through the hot pressing method, which has a major influence on the thermal conductivity of materials.

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

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Shalini Saxena

2015-08-01

Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

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Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

A re-examination of two-step lateral stress history in silicon carbide

International Nuclear Information System (INIS)

Dandekar, Dattatraya P.

2004-01-01

The observed two-step lateral stress history in silicon carbide, SiC-B under plane shock wave propagation [N. K. Bourne, J. Millett, and I. Pickup, J. Appl. Phys. 81, 6019 (1997)] is attributed to a delayed failure in SiC-B due to propagation of a slow moving front traveling behind the main shock wave. According to this attribution, the first lower magnitude, step corresponds to the lateral stress in intact shock compressed silicon carbide as a result of the fast moving plane shock wave. The second step of higher magnitude, observed after a few hundred nanoseconds, corresponds to the lateral stress in failed silicon carbide due to propagation of the slower moving front. The current analysis, takes into account additional relevant existing results dealing with shock response of SiC-B, and shows that the suggested explanation for the observed phenomenon remains in doubt

Silicon carbide layer structure recovery after ion implantation

International Nuclear Information System (INIS)

Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

1984-01-01

The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

Development of silicon carbide composites for fusion

International Nuclear Information System (INIS)

Snead, L.L.

1993-01-01

The use of silicon carbide composites for structural materials is of growing interest in the fusion community. However, radiation effects in these materials are virtually unexplored, and the general state of ceramic matrix composites for nonnuclear applications is still in its infancy. Research into the radiation response of the most popular silicon carbide composite, namely, the chemically vapor-deposited (CVD) SiC-carbon-Nicalon fiber system is discussed. Three areas of interest are the stability of the fiber and matrix materials, the stability of the fiber-matrix interface, and the true activation of these open-quotes reduced activityclose quotes materials. Two methods are presented that quantitatively measure the effect of radiation on fiber and matrix elastic modulus as well as the fiber-matrix interfacial strength. The results of these studies show that the factor limiting the radiation performance of the CVD SiC-carbon-Nicalon system is degradation of the Nicalon fiber, which leads to a weakened carbon interface. The activity of these composites is significantly higher than expected and is dominated by impurity isotopes. 52 refs., 12 figs., 3 tabs

Synthesis of carbon fibre-reinforced, silicon carbide composites by ...

Indian Academy of Sciences (India)

carbon fibre (Cf) reinforced, silicon carbide matrix composites which are ... eral applications, such as automotive brakes, high-efficiency engine systems, ... The PIP method is based on the use of organo metallic pre-ceramic precursors.

Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

Science.gov (United States)

Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

2014-05-27

A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

Effect of repressing of briquettes at high hydrostatic pressures on fine structure of carbide fraction in compacts and sintered BK10 alloy

International Nuclear Information System (INIS)

Chernyj, Yu.F.; Mikhajlenko, G.P.; Labinskaya, N.G.; Vangengeim, S.D.; Fal'kovskij, V.A.; Lavrukhina, L.I.

1977-01-01

The effect was studied of the repressing at high hydrostatic pressures of preforms of hard alloy powder mixture with different degree of fineness on changes in fine structure of the carbide phase of compacts and the VK10 sintered alloy. X-ray diffraction method was used. Sufficient widening of diffraction lines of the WC phase in compacts and in a sintered alloy with the increase in hydrostatic pressure testifies to the fact of the production of more inperfect carbide substructure mainly due to fragmentation subgrains. The effect of processing pressure manifests itself to a greater extent in compacts of the coarse-ground mixture; in the sintered alloy the repressing pressure effect ''is being smoothed'' to some extent. The density of dislocation in the compacts and the sintered alloy were evaluated quantatively depending on the hydrostatic pressure values during processing of preforms

GRANULATION TRIALS OF WASTE THE DUST SILICON CARBIDE FOR UTILIZATION IN METALLURGY

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Gabriel Borowski

2016-09-01

Full Text Available The article presents the results of laboratory granulation tests of dust silicon carbide and the results of research on the selection of the binder and the properties of the granules obtained. The research material was a waste of the silicon carbide powder with a high fragmentation, mixed with a cement or an organic modified starch specimen. Six tests were performed in a disc granulator with 100 cm in diameter. In each series of trial specified: the type and share of the binder, the diameter of the granules, tenderness, type of structure and mechanical properties. Good granules of silicon carbide obtained with the addition of cement binder with 4% of the mass fraction and at least 24 hours of seasoning. The binder should be added twice by powdering, first in a stirred granulator, and again after manufacture. It was found that the resulting granules may be used as a replacement of ferrosilicon in the process of steelmaking.

Microstructural designs of spark-plasma sintered silicon carbide ceramic scaffolds

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Román-Manso, B.

2014-04-01

Full Text Available Concentrated ceramic inks based on β-SiC powders, with different amounts of Y2O3 and Al2O3 as sintering aids, are developed for the adequate production of SiC scaffolds, with different patterned morphologies, by the Robocasting technique. The densifi cation of the as-produced 3D structures, previously heat treated in air at 600 ºC for the organics burn-out, is achieved with a Spark Plasma Sintering (SPS furnace. The effects of the amount of sintering additives (7 - 20 wt. % and the size of the SiC powders (50 nm and 0.5 μm on the processing of the inks, microstructure, hardness and elastic modulus of the sintered scaffolds, are studied. The use of nano-sized β-SiC powders significantly restricts the attainable maximum solids volume fraction of the ink (0.32 compared to 0.44 of the submicron-sized powders-based ink, involving a much larger porosity of the green ceramic bodies. Furthermore, reduced amounts of additives improve the mechanical properties of the ceramic skeleton; particularly, the stiffness. The grain size and specific surface area of the starting powders, the ink solids content, green porosity, amount of sintering additives and SPS temperatures are the main parameters to be taken into account for the production of these SiC cellular ceramics.Se han fabricado andamiajes de carburo de silicio (SiC usando la técnica de “Robocasting”, a partir de tintas cerámicas conteniendo β-SiC y distintas cantidades de Y2O3 and Al2O3, como aditivos de sinterización. La densificación de las estructuras tridimensionales, previamente calcinadas a 600 ºC para eliminar los aditivos orgánicos, se realizó en un horno de “Spark Plasma Sintering” (SPS. Se analizó el efecto de la cantidad de aditivos de sinterización (7-20 % en peso y del tamaño de partícula inicial del polvo de SiC (50 nm y 0.5 μm en el procesado de las tintas, en la microestructura, la dureza y el módulo elástico de las estructuras sinterizadas. El uso de polvo

Field assisted sintering of refractory carbide ceramics and fiber reinforced ceramic matrix composites

Science.gov (United States)

Gephart, Sean

The sintering behaviors of silicon carbide (SiC) and boron carbide (B4C) based materials were investigated using an emerging sintering technology known as field assisted sintering technology (FAST), also known as spark plasma sintering (SPS) and pulse electric current sintering (PECS). Sintering by FAST utilizes high density electric current, uniaxial pressure, and relatively high heating rate compared to conventional sintering techniques. This effort investigated issues of scaling from laboratory FAST system (25 ton capacity) to industrial FAST system (250 ton capacity), as well as exploring the difference in sintering behavior of single phase B4C and SiC using FAST and conventional sintering techniques including hot-pressing (HP) and pressure-less sintering (PL). Materials were analyzed for mechanical and bulk properties, including characterization of density, hardness, fracture toughness, fracture (bend) strength, elastic modulus and microstructure. A parallel investigation was conducted in the development of ceramic matrix composites (CMC) using SiC powder impregnation of fiber compacts followed by FAST sintering. The FAST technique was used to sinter several B4C and SiC materials to near theoretical density. Preliminary efforts established optimized sintering temperatures using the smaller 25 ton laboratory unit, targeting a sample size of 40 mm diameter and 8 mm thickness. Then the same B4C and SiC materials were sintered by the larger 250 ton industrial FAST system, a HP system, and PL sintering system with a targeted dense material geometry of 4 x 4 x 0.315 inches3 (101.6 x 101.6 x 8 mm3). The resulting samples were studied to determine if the sintering dynamics and/or the resulting material properties were influenced by the sintering technique employed. This study determined that FAST sintered ceramic materials resulted in consistently higher averaged values for mechanical properties as well as smaller grain size when compared to conventionally sintered

Damage characterisation of silicon carbides for applications in gas turbines in complex load conditions; Charakterisierung des Schaedigungsverhaltens von Siliciumcarbiden fuer den Einsatz in Gasturbinen unter komplexen Beanspruchungsbedingungen

Energy Technology Data Exchange (ETDEWEB)

Nestle, E.

2000-06-01

A tensile test facility for simultaneous thermal, mechanical and corrosive loading was developed and constructed for the purpose of characterizing the damage characteristics of ceramic high-temperature materials. Apart from tensile tests for up to 830 h, tests were also carried out on four-point bending test pieces and disk-shaped oxidation test pieces. The experiments were made at 1450 - 1550 C in dry or moist air. The materials investigated were one hot-pressed silicon carbide and two sintered silicon carbides. [German] Um keramische Hochtemperaturwerkstoffe bezueglich ihres Schaedigungsverhaltens charakterisieren zu koennen, wurde im Rahmen der vorliegenden Arbeit eine Zugpruefanlage zur gleichzeitigen Beanspruchung unter thermischen, mechanischen und korrosiven Bedingungen entwickelt und aufgebaut. Neben den in dieser Anlage durchgefuehrten Zugpruefungen mit Versuchszeiten bis zu 830 h wurden begleitende Untersuchungen an Vierpunkt-Biegeproben und scheibenfoermigen Oxidationsproben durchgefuehrt. Die Versuche konzentrierten sich auf den Temperaturbereich 1450-1550 unter trockenen und feuchten Luftatmosphaeren. Bei den untersuchten Werkstoffen handelte es sich um eine heissgepresste und zwei gesinterte Siliciumcarbid-Qualitaeten. (orig.)

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

Directory of Open Access Journals (Sweden)

Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

High frequency three-phase PWM grid connected drive using silicon-carbide switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Pedersen, Jacob Lykke; Nymand, Morten

2016-01-01

This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared with the ......This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared...

Microwave sintering of hydroxyapatite-based composites

International Nuclear Information System (INIS)

Fang, Y.; Roy, D.M.; Cheng, J.; Roy, R.; Agrawal, D.K.

1993-01-01

Composites of hydroxyapatite/partially stabilized zirconia (HAp/PSZ) and hydroxyapatite/silicon carbide whiskers (HAp/SiC) were sintered at 1100-1200 degrees C by microwave at 2.45 GHz. Characterization of the sintered composites was carried out by density, microstructure, phase composition, and fracture toughness measurements. The results show that although not yet fully densified, a much higher sintered density in the HAp/PSZ composite was achieved by microwave sintering than by conventional sintering at the same temperature. A relative density of 93% was achieved by 20 min. microwave processing at 1200 degrees C. Comparatively, 2 h conventional sintering of the same material at 1200 degrees C led to only 75.5% relative density. K IC of this microwave sintered HAp/PSZ of 93% density was found to be 3.88 MPa√m, which is 250% of the value for pure HAp of the same density. A further increase in K IC could be expected if full or nearly full densification was achieved. Sintering of PSZ particles in the HAp/PSZ composite was also observed in the microwave processed sample. Microwave sintering of HAp/SiC was not successful in the current study due to the oxidation of SiC in air at high temperature. 8 refs., 4 figs., 1 tab

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Science.gov (United States)

Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

2018-03-01

Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

Thermogravimetric analysis of silicon carbide-silicon nitride fibers at ambient to 1000 C in air

Science.gov (United States)

Daniels, J. G.; Ledbetter, F. E., III; Clemons, J. M.; Penn, B. G.

1984-01-01

Thermogravimetric analysis of silicon carbide-silicon nitride fibers was carried out at ambient to 1000 C in air. The weight loss over this temperature range was negligible. In addition, the oxidative stability at high temperature for a short period of time was determined. Fibers heated at 1000 C in air for fifteen minutes showed negligible weight loss (i.e., less than 1 percent).

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

Performance of biomorphic Silicon Carbide as particulate filter in diesel boilers.

Science.gov (United States)

Orihuela, M Pilar; Gómez-Martín, Aurora; Becerra, José A; Chacartegui, Ricardo; Ramírez-Rico, Joaquín

2017-12-01

Biomorphic Silicon Carbide (bioSiC) is a novel porous ceramic material with excellent mechanical and thermal properties. Previous studies have demonstrated that it may be a good candidate for its use as particle filter media of exhaust gases at medium or high temperature. In order to determine the filtration efficiency of biomorphic Silicon Carbide, and its adequacy as substrate for diesel particulate filters, different bioSiC-samples have been tested in the flue gases of a diesel boiler. For this purpose, an experimental facility to extract a fraction of the boiler exhaust flow and filter it under controlled conditions has been designed and built. Several filter samples with different microstructures, obtained from different precursors, have been tested in this bench. The experimental campaign was focused on the measurement of the number and size of particles before and after placing the samples. Results show that the initial efficiency of filters made from natural precursors is severely determined by the cutting direction and associated microstructure. In biomorphic Silicon Carbide derived from radially cut wood, the initial efficiency of the filter is higher than 95%. Nevertheless, when the cut of the wood is axial, the efficiency depends on the pore size and the permeability, reaching in some cases values in the range 70-90%. In this case, the presence of macropores in some of the samples reduces their efficiency as particle traps. In continuous operation, the accumulation of particles within the porous media leads to the formation of a soot cake, which improves the efficiency except in the case when extra-large pores exist. For all the samples, after a few operation cycles, capture efficiency was higher than 95%. These experimental results show the potential for developing filters for diesel boilers based on biomorphic Silicon Carbide. Copyright © 2017 Elsevier Ltd. All rights reserved.

Irradiation and annealing of p-type silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

2014-02-21

The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

Science.gov (United States)

Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2018-05-01

We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Synergistic effect of carbon nanotube as sintering aid and toughening agent in spark plasma sintered molybdenum disilicide-hafnium carbide composite

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Biswajyoti; Asiq Rahman, O.S.; Sribalaji, M [Materials Science and Engineering, Indian Institute of Technology Patna, Bihta Kanpa Road, Bihta, Patna, Bihar 801103 (India); Bakshi, Srinivasa Rao [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036 (India); Keshri, Anup Kumar, E-mail: anup@iitp.ac.in [Materials Science and Engineering, Indian Institute of Technology Patna, Bihta Kanpa Road, Bihta, Patna, Bihar 801103 (India)

2016-12-15

Hafnium carbide (HfC) along with sintering aids was consolidated at a relatively lower temperature i.e. 1600 °C (i.e. T=~0.41 T{sub m}) under a uniaxial load of 50 MPa by spark plasma sintering. Two different sintering aids such as molybdenum disilicide (MoSi{sub 2}) and carbon nanotube (CNT) were added to enhance the densification and lower the extent of grain growth in the sintered pellets. Density of the sintered pellet increased from 96.0±0.8% in HfC +5 wt% MoSi{sub 2} (HM) to 99.0±0.5% with the addition of 2 wt% CNT in HfC+5 wt% MoSi{sub 2} (HMC) at sintering temperature of 1600 °C. Further, the extent of grain growth drastically reduced from 204% in HM to 50% in HMC. Analysis of linear shrinkage during densification revealed that CNT addition increased densification rate and decreased the time required to reach the density of 99.0±0.5% at 1600 °C. Increased densification and lower degree of grain growth could be due to the synergistic effect offered by the CNT, which are as follows: (i) Lubrication effect of CNT, (ii) Lower activation energy for grain boundary diffusion (iii) Reduction in liquid phase sintering temperature and (iv) Grain boundary pinning. Fracture toughness of the sintered HM and HMC composite was obtained using indentation technique. By the addition of 2 wt% CNT in HM, drastic increase of 91% in fracture toughness was seen. This significant improvement in fracture toughness was due to the enhanced densification and relatively lower grain size of HMC. Also crack bridging, crack deflection, crack arrest, CNT and graphene sheet pull-out and swording played major role in toughening of HMC pellet.

Synthesis and investigation of silicon carbide nanowires by HFCVD ...

Indian Academy of Sciences (India)

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

The Influence of Sintering Temperature of Reactive Sintered (Ti, MoC-Ni Cermets

Directory of Open Access Journals (Sweden)

Marek Jõeleht

2015-09-01

Full Text Available Titanium-molybdenum carbide nickel cermets ((Ti, MoC-Ni were produced using high energy milling and reactive sintering process. Compared to conventional TiC-NiMo cermet sintering the parameters for reactive sintered cermets vary since additional processes are present such as carbide synthesis. Therefore, it is essential to acquire information about the suitable sintering regime for reactive sintered cermets. One of the key parameters is the final sintering temperature when the liquid binder Ni forms the final matrix and vacancies inside the material are removed. The influence of the final sintering temperature is analyzed by scanning electron microscopy. Mechanical properties of the material are characterized by transverse rupture strength, hardness and fracture toughness.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7179

Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

International Nuclear Information System (INIS)

Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

2015-01-01

Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

Energy Technology Data Exchange (ETDEWEB)

Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2016-08-01

Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

The effect of fiber microstructure on evolution of residual stresses in silicon carbide/titanium aluminide composites

Science.gov (United States)

Pindera, Marek-Jerzy; Freed, Alan D.

1992-01-01

This paper examines the effect of the morphology of the SCS6 silicon carbide fiber on the evolution of residual stresses in SiC/Ti composites. A micromechanics model based on the concentric cylinder concept is presented which is used to calculate residual stresses in a SiC/Ti composite during axisymmetric cooling by a spatially uniform temperature change. The silicon carbide fiber is modeled as a layered material with five distinct transversely isotropic and orthotropic, elastic layers, whereas the titanium matrix is taken to be isotropic, with temperature-dependent elastoplastic properties. The results arc compared with those obtained based on the assumption that the silicon carbide fiber is isotropic and homogeneous.

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Low-temperature synthesis of silicon carbide powder using shungite

International Nuclear Information System (INIS)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-01-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Low-temperature synthesis of silicon carbide powder using shungite

Energy Technology Data Exchange (ETDEWEB)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-07-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Synergistic methods for the production of high-strength and low-cost boron carbide

Science.gov (United States)

Wiley, Charles Schenck

2011-12-01

Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-03-05

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

International Nuclear Information System (INIS)

Naderi, N.; Hashim, M.R.

2013-01-01

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

International Nuclear Information System (INIS)

Cheng Qijin; Xu, S.

2007-01-01

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

Influence of nanometric silicon carbide on phenolic resin composites

Indian Academy of Sciences (India)

The results highlight the positive effect of the nanometric silicon carbide addition in phenolic resin on mechanical, thermo-mechanical and tribological performance, improving their strength, stiffness and abrasive properties. The best results were obtained for 1 wt% nSiC, proving that this value is the optimum nanometric ...

PECVD silicon carbide surface micromachining technology and selected MEMS applications

NARCIS (Netherlands)

Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

2011-01-01

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

Analysis of obsydians and films of silicon carbide by RBS technique

International Nuclear Information System (INIS)

Franco S, F.

1998-01-01

Motivated by archaeological interest this work is presented, which consist in the characterization of obsydian samples from different mineral sites in Mexico and films of silicon carbide, undertaken by an Ion Beam Analysis: RBS (Rutherford Back Scattering). As part of an intensive investigation of obsydian in Mesoamerica by anthropologists from Mexico National Institute of Anthropology and History, 818 samples were collected from different volcanic sources in Central Mexico for the purpose of establishing a data bank of element concentrations of each source. Part of this collection was analyzed by Neutron activation analysis and most of the important elements concentrations reported. In the first part of this work, the non-destructive IBA technique, RBS are used to analyze obsydian samples. The last part is an analysis of thin films of silicon carbide as a part of a research program of the Universidad Nacional Autonoma de Mexico and ININ. The application of this technique were carried out at the IF-UNAM, and the analysis was performed at laboratories of the ININ Nuclear Centre facilities. The samples considered in this work were mounted on a sample holder designed for the purpose of exposing each sample to the alpha particles beam. This RBS analysis was carried out with an ET Tandem accelerator at the IF UNAM. The spectrometry was carried out with employing a Si(Li) detector set at 15 degrees in relation to the target normal. The mean projectile energy was 2.00 MeV, and the beam profile was about 4 mm in diameter. As results were founded elemental concentrations of a set of samples from ten different sources: Altotonga (Veracruz), Penjamo (Guanajuato), Otumba (Mexico), Zinapecuaro (MIchoacan), Ucareo (Michoacan), Tres Cabezas (Puebla), Sierra Navajas (Hidalgo), Zaragoza (Puebla), Guadalupe Victoria (Puebla) and Oyameles (Puebla). The mean values are accompanied by errors expressed as one standard devistion of the mean for each element

Thermodynamic analysis of thermal plasma process of composite zirconium carbide and silicon carbide production from zircon concentrates

International Nuclear Information System (INIS)

Kostic, Z.G.; Stefanovic, P.Lj.; Pavlovic; Pavlovic, Z.N.; Zivkovic, N.V.

2000-01-01

Improved zirconium ceramics and composites have been invented in an effort to obtain better resistance to ablation at high temperature. These ceramics are suitable for use as thermal protection materials on the exterior surfaces of spacecraft, and in laboratory and industrial environments that include flows of hot oxidizing gases. Results of thermodynamic consideration of the process for composite zirconium carbide and silicon carbide ultrafine powder production from ZrSiO 4 in argon thermal plasma and propane-butane gas as reactive quenching reagents are presented in the paper. (author)

Hydrogen adsorption in metal-decorated silicon carbide nanotubes

Science.gov (United States)

Singh, Ram Sevak; Solanki, Ankit

2016-09-01

Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

A new metal electrocatalysts supported matrix: Palladium nanoparticles supported silicon carbide nanoparticles and its application for alcohol electrooxidation

International Nuclear Information System (INIS)

Dai Hong; Chen Yanling; Lin Yanyu; Xu Guifang; Yang Caiping; Tong Yuejin; Guo Longhua; Chen Guonan

2012-01-01

In this paper, we propose a facile approach for palladium nanoparticles load using silicon carbide nanoparticles as the new supported matrix and a familiar NaBH 4 as reducer. Detailed X-ray photoelectron spectrum (XPS) and transmission electron microscopy (TEM) analysis of the resultant products indicated that palladium nanoparticles are successfully immobilized onto the surface of the silicon carbide nanoparticles with uniform size distribution between 5 and 7 nm. The relative electrochemical characterization clearly demonstrated excellent electrocatalytic activity of this material toward alcohol in alkaline electrolytes. Investigation on the characteristics of the electrocatalytic activity of this material further indicated that the palladium nanoparticles supporting on SiC are very promising for direct alcohol fuel cells (DMFCs), biosensor and electronic devices. Moreover, it was proved that silicon carbide nanoparticles with outstanding properties as support for catalysis are of strong practical interest. And the silicon carbide could perform attractive role in adsorbents, electrodes, biomedical applications, etc.

Abrasive wear behavior of heat-treated ABC-silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiao Feng; Lee, Gun Y.; Chen, Da; Ritchie, Robert O.; De Jonghe, Lutgard C.

2002-06-17

Hot-pressed silicon carbide, containing aluminum, boron, and carbon additives (ABC-SiC), was subjected to three-body and two-body wear testing using diamond abrasives over a range of sizes. In general, the wear resistance of ABC-SiC, with suitable heat treatment, was superior to that of commercial SiC.

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

Thermogravimetric analysis of silicon carbide-silicon nitride polycarbosilazane precursor during pyrolysis from ambient to 1000 C

Science.gov (United States)

Ledbetter, F. E., III; Daniels, J. G.; Clemons, J. M.; Hundley, N. H.; Penn, B. G.

1984-01-01

Thermogravimetric analysis data are presented on the unmeltable polycarbosilazane precursor of silicon carbide-silicon nitride fibers, over the room temperature-1000 C range in a nitrogen atmosphere, in order to establish the weight loss at various temperatures during the precursor's pyrolysis to the fiber material. The fibers obtained by this method are excellent candidates for use in applications where the oxidation of carbon fibers (above 400 C) renders them unsuitable.

Effect of sintering temperature and boron carbide content on the wear behavior of hot pressed diamond cutting segments

Directory of Open Access Journals (Sweden)

Islak S.

2015-01-01

Full Text Available The aim of this study was to investigate the effect of sintering temperature and boron carbide content on wear behavior of diamond cutting segments. For this purpose, the segments contained 2, 5 and 10 wt.% B4C were prepared by hot pressing process carried out under a pressure of 35 MPa, at 600, 650 and 700 °C for 3 minutes. The transverse rupture strength (TRS of the segments was assessed using a three-point bending test. Ankara andesite stone was cut to examine the wear behavior of segments with boron carbide. Microstructure, surfaces of wear and fracture of segments were determined by scanning electron microscopy (SEM-EDS, and X-ray diffraction (XRD analysis. As a result, the wear rate decreased significantly in the 0-5 wt.% B4C contents, while it increased in the 5-10 wt.% B4C contents. With increase in sintering temperature, the wear rate decreased due to the hard matrix.

Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

Science.gov (United States)

Baumgartner, H. R.

1978-01-01

Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

Science.gov (United States)

Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

1975-01-01

Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

Stress envelope of silicon carbide composites at elevated temperatures

International Nuclear Information System (INIS)

Nozawa, Takashi; Kim, Sunghun; Ozawa, Kazumi; Tanigawa, Hiroyasu

2014-01-01

To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case

Stress envelope of silicon carbide composites at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan); Kim, Sunghun [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Ozawa, Kazumi; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan)

2014-10-15

To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case.

The Affordable Pre-Finishing of Silicon Carbide for Optical Applications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Creare proposes to develop a novel, laser-assisted, pre-finishing process for chemical vapor deposition (CVD) coated silicon-carbide ceramics. Our innovation will...

Ultrafast nonlinear response of silicon carbide to intense THz fields

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Kaltenecker, Korbinian J.

2017-01-01

We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes...

Low-Cost, Silicon Carbide Replication Technique for LWIR Mirror Fabrication, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — SSG proposes an innovative optical manufacturing approach that will enable the low-cost fabrication of lightweighted, Long Wave Infrared (LWIR) Silicon Carbide (SiC)...

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

Science.gov (United States)

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

Joining technique of silicon nitride and silicon carbide in a mixture and/or in contact with high-melting metals and alloys

International Nuclear Information System (INIS)

Mueller-Zell, A.

1980-01-01

The following work gives a survey on possible joining techniques of silicon nitride (Si 3 N 4 ) and silicon carbide (SiC) in a mixture and/or in contact with high-melting metals and alloys. The problem arose because special ceramic materials such as Si 3 N 4 and SiC are to be used in gas turbines. The special ceramics in use may unavoidably come into contact with metals or the one hand, or form intended composite systems with them on the other hand, like e.g. the joining of a Si 3 N 4 disc with a metallic drive axis or ceramic blades with a metal wheel. The mixed body of X% ceramic (Si 3 N 4 , SiC) and Y% metal powder were prepared depending on the material combination at 1200 0 C-1750 0 C by hot-pressing or at 1200 0 C-2050 0 C by hot-pressing or pressureless sintering. The following possible ways were chosen as interlaminar bonding ceramic/metal/ceramic: on the one hand pressure welding (composite hot pressing) and the solid-state bonding in direct contact and by means of artificially included transition mixed layers, as well as material intermediate layers between metal and ceramic and on the other hand, soldering with active solder with molten phase. (orig./RW) [de

SnO2*CoO ceramic obtained by microwave sintering

International Nuclear Information System (INIS)

Bordignon, M.A.N; Moura, F.; Zaghete, M.A.; Varela, J.A.; Perazolli, L.

2009-01-01

This work consists in the sintering study of CoO doped SnO 2 using microwave sintering oven and silicon carbide as a susceptor. The powders were obtained by dry oxides mixture and conformed in cylindrical shapes with 6mmx8mm and green density to 60%. Then the compacts were sintering up to 1.050 deg C, using heating rate of 50 deg C/min and isotherm up to 30min. The densities obtained were above 95% for both techniques. It was observed that occurred a temperature reducing of 400 deg C and time reducing of 210min to obtain the same densities, when was used the microwave oven without the phenomena of thermal runaway. So the sintered compacts were accomplished using DRX and SEM. It was made the electrical characterization (current x voltage) and it was found to have great potential in the production of dense ceramic-based SnO 2 with low resistivity to obtain electro-ceramic devices. (author)

A review of oxide, silicon nitride, and silicon carbide brazing

International Nuclear Information System (INIS)

Santella, M.L.; Moorhead, A.J.

1987-01-01

There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

Damage radiation alpha effects in sintered waste form

International Nuclear Information System (INIS)

Messi de Bernasconi, Norma B.; Prado, Miguel O.; Bevilacqua, Arturo M.; Arribere, Maria; Heredia, Arturo D.; Sanfilippo, Miguel

1999-01-01

We have subjected the borosilicate glass to thermal neutron irradiation in a reactor, with an accumulated fluence equivalent to approximately E3, E4, E5, y E6 years of waste disposal. We considered the following potential effects of accumulated alpha decay: a) Changes in the density; b) Changes in the dissolution rates; c) Changes in the microstructure of the sintered glass. (author)

Flash sintering of ceramic materials

Science.gov (United States)

Dancer, C. E. J.

2016-10-01

During flash sintering, ceramic materials can sinter to high density in a matter of seconds while subjected to electric field and elevated temperature. This process, which occurs at lower furnace temperatures and in shorter times than both conventional ceramic sintering and field-assisted methods such as spark plasma sintering, has the potential to radically reduce the power consumption required for the densification of ceramic materials. This paper reviews the experimental work on flash sintering methods carried out to date, and compares the properties of the materials obtained to those produced by conventional sintering. The flash sintering process is described for oxides of zirconium, yttrium, aluminium, tin, zinc, and titanium; silicon and boron carbide, zirconium diboride, materials for solid oxide fuel applications, ferroelectric materials, and composite materials. While experimental observations have been made on a wide range of materials, understanding of the underlying mechanisms responsible for the onset and latter stages of flash sintering is still elusive. Elements of the proposed theories to explain the observed behaviour include extensive Joule heating throughout the material causing thermal runaway, arrested by the current limitation in the power supply, and the formation of defect avalanches which rapidly and dramatically increase the sample conductivity. Undoubtedly, the flash sintering process is affected by the electric field strength, furnace temperature and current density limit, but also by microstructural features such as the presence of second phase particles or dopants and the particle size in the starting material. While further experimental work and modelling is still required to attain a full understanding capable of predicting the success of the flash sintering process in different materials, the technique non-etheless holds great potential for exceptional control of the ceramic sintering process.

The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

A comparative study of the constitutive models for silicon carbide

Science.gov (United States)

Ding, Jow-Lian; Dwivedi, Sunil; Gupta, Yogendra

2001-06-01

Most of the constitutive models for polycrystalline silicon carbide were developed and evaluated using data from either normal plate impact or Hopkinson bar experiments. At ISP, extensive efforts have been made to gain detailed insight into the shocked state of the silicon carbide (SiC) using innovative experimental methods, viz., lateral stress measurements, in-material unloading measurements, and combined compression shear experiments. The data obtained from these experiments provide some unique information for both developing and evaluating material models. In this study, these data for SiC were first used to evaluate some of the existing models to identify their strength and possible deficiencies. Motivated by both the results of this comparative study and the experimental observations, an improved phenomenological model was developed. The model incorporates pressure dependence of strength, rate sensitivity, damage evolution under both tension and compression, pressure confinement effect on damage evolution, stiffness degradation due to damage, and pressure dependence of stiffness. The model developments are able to capture most of the material features observed experimentally, but more work is needed to better match the experimental data quantitatively.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

Effect of processing on fracture toughness of silicon carbide as determined by Vickers indentations

Science.gov (United States)

Dannels, Christine M.; Dutta, Sunil

1989-01-01

Several alpha-SiC materials were processed by hot isostatic pressing (HIPing) and by sintering an alpha-SiC powder containing boron and carbon. Several beta-SiC materials were processed by HIPing a beta-SiC powder with boron and carbon additions. The fracture toughnesses K(sub 1c) of these beta- and alpha-SiC materials were estimated from measurements of Vickers indentations. The three formulas used to estimate K(sub 1c) from the indentation fracture patterns resulted in three ranges of K(sub 1c) estimates. Furthermore, each formula measured the effects of processing differently. All three estimates indicated that fine-grained HIPed alpha-SiC has a higher K(sub 1c) than coarsed-grained sintered alpha-SiC. Hot isostatically pressed beta-SiC, which had an ultrafine grain structure, exhibited a K(sub 1c) comparable to that of HIPed alpha-SiC.

The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

Mechanical characterization of cemented carbide WC-6Co (%wt) manufactured by SPS (Spark Plasma Sintering

International Nuclear Information System (INIS)

Boidi, G.; Tertuliano, A.J.; Machado, I.F.

2016-01-01

This work aimed to manufacture cemented carbide (WC-6%wtCo) obtained by SPS (Spark Plasma Sintering) process and to carry out the mechanical characterization by hardness and fracture toughness. The material was consolidated at 1100 deg C for different holding times (1 min, 5 min, 10 min), in order to evaluate the densification. A reference sample was also used to be compared to SPS. Optical and scanning electron microscopy were carried out to characterize the microstructural features of the samples and mechanical properties were obtained by hardness measurements (micro and macro) and instrumented indentation. The fracture toughness was calculated with the method of Palmqvist. Best results were found in the material sintered by SPS for 10 minutes of holding time, in which 97% of relative density and about 1600 HV_1_0 was reached. (author)

Properties of forced convection experimental with silicon carbide based nano-fluids

Science.gov (United States)

Soanker, Abhinay

With the advent of nanotechnology, many fields of Engineering and Science took a leap to the next level of advancements. The broad scope of nanotechnology initiated many studies of heat transfer and thermal engineering. Nano-fluids are one such technology and can be thought of as engineered colloidal fluids with nano-sized colloidal particles. There are different types of nano-fluids based on the colloidal particle and base fluids. Nano-fluids can primarily be categorized into metallic, ceramics, oxide, magnetic and carbon based. The present work is a part of investigation of the thermal and rheological properties of ceramic based nano-fluids. alpha-Silicon Carbide based nano-fluid with Ethylene Glycol and water mixture 50-50% volume concentration was used as the base fluid here. This work is divided into three parts; Theoretical modelling of effective thermal conductivity (ETC) of colloidal fluids, study of Thermal and Rheological properties of alpha-SiC nano-fluids, and determining the Heat Transfer properties of alpha-SiC nano-fluids. In the first part of this work, a theoretical model for effective thermal conductivity (ETC) of static based colloidal fluids was formulated based on the particle size, shape (spherical), thermal conductivity of base fluid and that of the colloidal particle, along with the particle distribution pattern in the fluid. A MATLAB program is generated to calculate the details of this model. The model is specifically derived for least and maximum ETC enhancement possible and thereby the lower and upper bounds was determined. In addition, ETC is also calculated for uniform colloidal distribution pattern. Effect of volume concentration on ETC was studied. No effect of particle size was observed for particle sizes below a certain value. Results of this model were compared with Wiener bounds and Hashin- Shtrikman bounds. The second part of this work is a study of thermal and rheological properties of alpha-Silicon Carbide based nano

REFEL silicon carbide. The development of a ceramic for a nuclear engineering application

Energy Technology Data Exchange (ETDEWEB)

Kennedy, P.; Shennan, J. V.

1974-10-15

REFEL silicon carbide is a strong, uniform, fine-grain material which retains its strength and is stable in an oxidizing environment up to 1400 deg C. REFEL silicon carbide tube can be produced in quantity and by a combination of process controls, visual examination, NDT and proof testing, a very consistent product can be made. The material was developed as a nuclear fuel cladding capable of operating at temperatures o 1100 deg C in a CO₂-cooled reactor and the combination of excellent physical, mechanical and chemical properties together with product consistency ave confirmed the feasibility of this application. In a series of irradiation experiments, REFEL silicon carbide clad fuel pins have behaved predictably. At irradiation temperatures below about 800 deg C, the thermal conductivity falls sharply, the associate thermal stress increases, and the probability of failure, for the same rating, increases. It has been demonstrated theoretically that this effect can be overcome by halving the tube wall thickness. In addition to the thermal stress enhancement, the strength and Weibull modulus also fall under irradiation and consequently the safe working stress is reduced, Calculations show that in the absence of irradiation a fourfold increase in rating cold be tolerated. Thus, the material should have excellent thermal stress resistance in non-nuclear applications such as gas turbine components. (auth)

Nondestructive neutron activation analysis of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Vandergraaf, T. T.; Wikjord, A. G.

1973-10-15

Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)

Characterisation of nuclear dispersion fuels. The non-destructive examination of silicon carbide by selenium immersion

Energy Technology Data Exchange (ETDEWEB)

Ambler, J.F.R.; Ferguson, I.F.

1974-07-15

The non-destructive microscopic examination of silicon-carbide-coated spheres containing uranium carbide, which involves immersing the coated spheres in selenium, is particularly suited for the examination of flaws in the coats but it is not possible to measure coating thicknesses by this method. Some coats are found to be opaque and this is related to their porosity. (auth)

Progress in Studies on Carbon and Silicon Carbide Nanocomposite Materials

International Nuclear Information System (INIS)

Xiao, P.; Chen, J.; Xian-feng, X.

2010-01-01

Silicon carbide nanofiber and carbon nanotubes are introduced. The structure and application of nanotubers (nanofibers) in carbon/carbon composites are emphatically presented. Due to the unique structure of nanotubers (nanofibers), they can modify the microstructure of pyrocarbon and induce the deposition of pyrocarbon with high text in carbon/carbon composites. So the carbon/carbon composites modified by CNT/CNF have more excellent properties.

Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

Science.gov (United States)

Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

2018-03-01

Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

Science.gov (United States)

Neudeck, Philip G.

1998-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

Device for fracturing silicon-carbide coatings on nuclear-fuel particles

Science.gov (United States)

Turner, L.J.; Willey, M.G.; Tiegs, S.M.; Van Cleve, J.E. Jr.

This invention is a device for fracturing particles. It is designed especially for use in hot cells designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel materials, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Method for fracturing silicon-carbide coatings on nuclear-fuel particles

Science.gov (United States)

Turner, Lloyd J.; Willey, Melvin G.; Tiegs, Sue M.; Van Cleve, Jr., John E.

1982-01-01

This invention is a device for fracturing particles. It is designed especially for use in "hot cells" designed for the handling of radioactive materials. In a typical application, the device is used to fracture a hard silicon-carbide coating present on carbon-matrix microspheres containing nuclear-fuel material, such as uranium or thorium compounds. To promote remote control and facilitate maintenance, the particle breaker is pneumatically operated and contains no moving parts. It includes means for serially entraining the entrained particles on an anvil housed in a leak-tight chamber. The flow rate of the gas is at a value effecting fracture of the particles; preferably, it is at a value fracturing them into product particulates of fluidizable size. The chamber is provided with an outlet passage whose cross-sectional area decreases in the direction away from the chamber. The outlet is connected tangentially to a vertically oriented vortex-flow separator for recovering the product particulates entrained in the gas outflow from the chamber. The invention can be used on a batch or continuous basis to fracture the silicon-carbide coatings on virtually all of the particles fed thereto.

Ion beam figuring of CVD silicon carbide mirrors

Science.gov (United States)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

The preparation method of solid boron solution in silicon carbide in the form of micro powder

International Nuclear Information System (INIS)

Pampuch, R.; Stobierski, L.; Lis, J.; Bialoskorski, J.; Ermer, E.

1993-01-01

The preparation method of solid boron solution in silicon carbide in the form of micro power has been worked out. The method consists in introducing mixture of boron, carbon and silicon and heating in the atmosphere of inert gas to the 1573 K

Formation of Porous Silicon Carbide and its Suitability as a Chemical and Temperature Detector

National Research Council Canada - National Science Library

Rittenhouse, Tilghman

2004-01-01

.... A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC the electroless process does not require electrical contact during etching...

Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

International Nuclear Information System (INIS)

Gemini, Laura; Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji; Limpouch, Jiri; Mocek, Tomas

2013-01-01

Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig; Wang, Xiongfei

2016-01-01

This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influ......This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then......, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance...... of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed...

Some new aspects of microstructural development during sintering of silicon nitride

International Nuclear Information System (INIS)

Feuer, H.; Woetting, G.; Gugel, E.

1994-01-01

The mechanical properties of silicon nitride ceramics strongly depend on their microstructure. However, there is still a lively discussion about the parameters controlling the microstructural development. The current research was stimulated by the observation that a bimodal grain-size distribution in dense silicon nitride has a very beneficial effect on the mechanical properties, especially on the fracture toughness. This paper is focused on the relationship between the α-β-transformation and the densification of silicon nitride powders with different characteristics and sintering additives. Effects of β-grains originally present in the silicon nitride powder, of added β-silicon nitride seeds and of β-crystals formed by the α/β-transformation on the resulting microstructure and on the properties are discussed. The results are summarised in a model describing prerequisites and processing conditions, which are necessary to achieve a bimodal microstructure, i. e. a self-reinforced silicon nitride ceramic. (orig.)

Surface/subsurface observation and removal mechanisms of ground reaction bonded silicon carbide

Science.gov (United States)

Yao, Wang; Zhang, Yu-Min; Han, Jie-cai; Zhang, Yun-long; Zhang, Jian-han; Zhou, Yu-feng; Han, Yuan-yuan

2006-01-01

Reaction Bonded Silicon Carbide (RBSiC) has long been recognized as a promising material for optical applications because of its unique combination of favorable properties and low-cost fabrication. Grinding of silicon carbide is difficult because of its high hardness and brittleness. Grinding often induces surface and subsurface damage, residual stress and other types of damage, which have great influence on the ceramic components for optical application. In this paper, surface integrity, subsurface damage and material removal mechanisms of RBSiC ground using diamond grinding wheel on creep-feed surface grinding machine are investigated. The surface and subsurface are studied with scanning electron microscopy (SEM) and optical microscopy. The effects of grinding conditions on surface and subsurface damage are discussed. This research links the surface roughness, surface and subsurface cracks to grinding parameters and provides valuable insights into the material removal mechanism and the dependence of grind induced damage on grinding conditions.

UV laser ablation of silicon carbide ring surfaces for mechanical seal applications

Science.gov (United States)

Daurelio, Giuseppe; Bellosi, Alida; Sciti, Diletta; Chita, Giuseppe; Allegretti, Didio; Guerrini, Fausto

2000-02-01

Silicon carbide ceramic seal rings are treated by KrF excimer laser irradiation. Surface characteristics, induced by laser treatment, depend upon laser fluence, the number of laser pulses, their energy and frequency, the rotation rate of the ring and the processing atmosphere. It was ascertained that silicon carbide has to be processed under an inert atmosphere to avoid surface oxidation. Microstructural analyses of surface and cross section of the laser processed samples showed that the SiC surface is covered by a scale due to the melting/resolidification processes. At high fluence there are no continuous scales on the surfaces; materials is removed by decomposition/vaporization and the ablation depth is linearly dependent on the number of pulses. Different surface morphologies are observed. The evolution of surface morphology and roughness is discussed with reference to compositions, microstructure and physical and optical properties of the ceramic material and to laser processing parameters. Preliminary results on tribological behavior of the treated seals are reported.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Multi-quantum spin resonances of intrinsic defects in silicon carbide

International Nuclear Information System (INIS)

Georgy Astakhov

2014-01-01

We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

Fluidized bed deposition and evaluation of silicon carbide coatings on microspheres

International Nuclear Information System (INIS)

Federer, J.I.

1977-01-01

The fuel element for the HTGR is an array of closely packed fuel microspheres in a carbonaceous matrix. A coating of dense silicon carbide (SiC), along with pyrocarbon layers, is deposited on the fueled microspheres to serve as a barrier against diffusion of fission products. The microspheres are coated with silicon carbide in a fluidized bed by reaction of methyltrichlorosilane (CH 3 SiCl 3 or MTS) and hydrogen at elevated temperatures. The principal variables of coating temperature and reactant gas composition (H 2 /MTS ratio) have been correlated with coating rate, morphology, stoichiometry, microstructure, and density. The optimum temperature for depositing highly dense coatings is in the range 1475 to 1675 0 C. Lower temperatures result in silicon-rich deposits, while higher temperatures may cause unacceptable porosity. The optimum H 2 /MTS ratio for highly dense coatings is 20 or more (approximately 5% MTS or less). The amount of grown-in porosity increases as the H 2 /MTS ratio decreases below 20. The requirement that the H 2 /MTS ratio be about 20 or more imposes a practical restraint on coating rate, since increasing the total flow rate would eventually expel microspheres from the coating tube. Evaluation of stoichiometry, morphology, and microstructure support the above mentioned optimum conditions of temperature and reactant gas composition. 18 figures, 3 tables

Evaluation of sintering effects on SiC-incorporated UO2 kernels under Ar and Ar–4%H2 environments

International Nuclear Information System (INIS)

Silva, Chinthaka M.; Lindemer, Terrence B.; Hunt, Rodney D.; Collins, Jack L.; Terrani, Kurt A.; Snead, Lance L.

2013-01-01

Silicon carbide (SiC) is suggested as an oxygen getter in UO 2 kernels used for tristructural isotropic (TRISO) particle fuels and to prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that an internal gelation process can be used to incorporate SiC in UO 2 fuel kernels. Even though the presence of UC in either argon (Ar) or Ar–4%H 2 sintered samples suggested a lowering of the SiC up to 3.5–1.4 mol%, respectively, the presence of other silicon-related chemical phases indicates the preservation of silicon in the kernels during sintering process. UC formation was presumed to occur by two reactions. The first was by the reaction of SiC with its protective SiO 2 oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO 2 to form UC. The second process was direct UO 2 reaction with SiC grains to form SiO, CO, and UC. A slightly higher density and UC content were observed in the sample sintered in Ar–4%H 2 , but both atmospheres produced kernels with ∼95% of theoretical density. It is suggested that incorporating CO in the sintering gas could prevent UC formation and preserve the initial SiC content

Creation of leak-proof silicon carbide diffusion barriers by means of pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Reinecke, A.-M.; Lustfeld, M.; Lippmann, W., E-mail: wolfgang.lippmann@tu-dresden.de; Hurtado, A.

2014-05-01

TRISO (tristructural isotropic) coated fuel particles are a crucial element of the HTR safety concept. While TRISO coated particles have been proven as a very efficient barrier for a large range of fission products in HTR experimental reactors, some particular fission products could still diffuse at a considerable rate. Most importantly, radioactive silver {sup 110m}Ag was found to be released from coated particles. In future HTRs with active components like a gas turbine in the primary circuit, such silver contamination may severely limit maintainability of these parts with the result of reduced life-time performance. So far, experimental analyses on silver diffusion through silicon carbide have led to contradictory results. In this work, an alternative method was used to generate silicon carbide layers as a basis for analysis of silver diffusion. With pulsed laser deposition (PLD), it is possible to generate coatings of different materials and various kinds of compounds. In particular, this technology allows the generation of layers very well defined with respect to their composition, purity and density. The microstructure can precisely be manipulated through various parameters. Based on different silicon carbide coatings with well-defined properties, we are going to investigate the silver diffusion process. Our goal is to derive the properties of an ideal silicon carbide coating preventing silver diffusion entirely. In this paper we present the major aspects of our work creating crystalline SiC layers as well as silver and CsI layers both on plane and spherical substrates. Analyses with X-ray diffraction, X-ray spectrometry and secondary ion mass spectrometry show that complex multilayer systems comprising a graphite substrate, a crystalline SiC layer and an intermediate silver layer were successfully created. Major challenges to approach in the future are the handling of high-level intrinsic stresses forming in the layer structure as well as the high vapour

Stored energy in irradiated silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

1997-04-01

This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

Single Photon Sources in Silicon Carbide

International Nuclear Information System (INIS)

Brett Johnson

2014-01-01

Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

Time-Dependent Stress Rupture Strength Degradation of Hi-Nicalon Fiber-Reinforced Silicon Carbide Composites at Intermediate Temperatures

Science.gov (United States)

Sullivan, Roy M.

2016-01-01

The stress rupture strength of silicon carbide fiber-reinforced silicon carbide composites with a boron nitride fiber coating decreases with time within the intermediate temperature range of 700 to 950 degree Celsius. Various theories have been proposed to explain the cause of the time-dependent stress rupture strength. The objective of this paper is to investigate the relative significance of the various theories for the time-dependent strength of silicon carbide fiber-reinforced silicon carbide composites. This is achieved through the development of a numerically based progressive failure analysis routine and through the application of the routine to simulate the composite stress rupture tests. The progressive failure routine is a time-marching routine with an iterative loop between a probability of fiber survival equation and a force equilibrium equation within each time step. Failure of the composite is assumed to initiate near a matrix crack and the progression of fiber failures occurs by global load sharing. The probability of survival equation is derived from consideration of the strength of ceramic fibers with randomly occurring and slow growing flaws as well as the mechanical interaction between the fibers and matrix near a matrix crack. The force equilibrium equation follows from the global load sharing presumption. The results of progressive failure analyses of the composite tests suggest that the relationship between time and stress-rupture strength is attributed almost entirely to the slow flaw growth within the fibers. Although other mechanisms may be present, they appear to have only a minor influence on the observed time-dependent behavior.

Lattice location of impurities in silicon Carbide

CERN Document Server

AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

Neutron detection performance of silicon carbide and diamond detectors with incomplete charge collection properties

Energy Technology Data Exchange (ETDEWEB)

Hodgson, M., E-mail: michael.hodgson@becq.co.uk [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Lohstroh, A.; Sellin, P. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomas, D. [NPL, Teddington TW11 0LW (United Kingdom)

2017-03-01

The benefits of neutron detection and spectroscopy with carbon based, wide band gap, semiconductor detectors have previously been discussed within the literature. However, at the time of writing there are still limitations with these detectors related to availability, cost, size and perceived quality. This study demonstrates that lower quality materials—indicated by lower charge collection efficiency (CCE), poor resolution and polarisation effect—available at wafer scale and lower cost, can fulfil requirements for fast neutron detection and spectroscopy for fluxes over several orders of magnitude, where only coarse energy discrimination is required. In this study, a single crystal diamond detector (D-SC, with 100% CCE), a polycrystalline diamond (D-PC, with ≈4% CCE) and semi-insulating silicon carbide (SiC-SI, with ≈35% CCE) have been compared for alpha and fast neutron performance. All detectors demonstrated alpha induced polarisation effects in the form of a change of both energy peak position and count rate with irradiation time. Despite these operational issues the ability to detect fast neutrons and distinguish neutron energies was observed. This performance was demonstrated over a wide dynamic range (500–40,000 neutrons/s), with neutron induced polarisation being demonstrated in D-PC and SiC-SI at high fluxes.

Lattice dynamics of {alpha} boron and of boron carbide; Proprietes vibrationnelles du bore {alpha} et du carbure de bore

Energy Technology Data Exchange (ETDEWEB)

Vast, N

1999-07-01

The atomic structure and the lattice dynamics of {alpha} boron and of B{sub 4}C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In {alpha} boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B{sub 4}C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

Science.gov (United States)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

Use of spectroscopic techniques for the chemical analysis of biomorphic silicon carbide ceramics

International Nuclear Information System (INIS)

Pavon, J.M. Cano; Alonso, E. Vereda; Cordero, M.T. Siles; Torres, A. Garcia de; Lopez-Cepero, J.M.

2005-01-01

Biomorphic silicon carbide ceramics are a new class of materials prepared by several complex processing steps including pre-processing (shaping, drying, high-temperature pyrolysis in an inert atmosphere) and reaction with liquid silicon to obtain silicon-carbide. The results of industrial process of synthesis (measured by the SiC content) must be evaluated by means of fast analytical methods. In the present work, diverse samples of biomorphic ceramics derived from wood are studied for to evaluate the capability of the different analytical techniques (XPS, LIBS, FT-IR and also atomic spectroscopy applied to previously dissolved samples) for the analysis of these materials. XPS and LIBS gives information about the major components, whereas XPS and FT-IR can be used to evaluate the content of SiC. On the other hand, .the use of atomic techniques (as ICP-MS and ETA-AAS) is more adequate for the analysis of metal ions, specially at trace level. The properties of ceramics depend decisively of the content of chemical elements. Major components found were C, Si, Al, S, B and Na in all cases. Previous dissolution of the samples was optimised by acid attack in an oven under microwave irradiation

High yield silicon carbide pre-ceramic polymers

International Nuclear Information System (INIS)

Baney, R.H.

1982-01-01

Polysilanes which are substituted with (CH 3 ) 3 SiO-groups are useful for the preparation in high yields of fine grained silicon carbide ceramic materials. They consist of 0 to 60 mole % (CH 3 ) 2 Si units and 100 to 40 mole % CH 3 Si units, all Si valences not satisfied by CH 3 groups or Si atoms being directed to groups (CH 3 ) 3 SiO-, which siloxane groups amount to 23 to 61 weight % of the polysilane. They are prepared by reaction of the corresponding chloro- or bromo-methyl polysilanes with at least the stoichiometric amounts of (CH 3 ) 3 SiOSi(CH 3 ) 3 and water in the presence of a strong acid. (author)

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

Energy Technology Data Exchange (ETDEWEB)

Gimbert, J

1999-03-04

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

Energy Technology Data Exchange (ETDEWEB)

Buss, R.J.

1997-02-01

A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

High temperature Hexoloy{trademark} SX silicon carbide. Final report

Energy Technology Data Exchange (ETDEWEB)

Srinivasan, G.V.; Lau, S.K.; Storm, R.S. [Carborundum Co., Niagara Falls, NY (United States)

1994-09-01

HEXOLOY{reg_sign} SX-SiC, fabricated with Y and Al containing compounds as sintering aids, has been shown to possess significantly improved strength and toughness over HEXOLOY{reg_sign}SA-SiC. This study was undertaken to establish and benchmark the complete mechanical property database of a first generation material, followed by a process optimization task to further improve the properties. Mechanical characterization on the first generation material indicated that silicon-rich pools, presumably formed as a reaction product during sintering, controlled the strength from room temperature to 1,232 C. At 1,370 C in air, the material was failing due to a glass-phase formation at the surface. This glass-phase formation was attributed to the reaction of yttrium aluminates, which exist as a second phase in the material, with the ambient. This process was determined to be a time-dependent one that leads to slow crack growth. Fatigue experiments clearly indicated that the slow crack growth driven by the reaction occurred only at temperatures >1,300 C, above the melting point of the glass phase. Process optimization tasks conducted included the selection of the best SiC powder source, studies on mixing/milling conditions for SiC powder with the sintering aids, and a designed experiment involving a range of sintering and post-treatment conditions. The optimization study conducted on the densification variables indicated that lower sintering temperatures and higher post-treatment pressures reduce the Si-rich pool formation, thereby improving the room-temperature strength. In addition, it was also determined that furnacing configuration and atmosphere were critical in controlling the Si-rich formation.

Alpha radiation detection using silicon memory chips - preliminary studies

International Nuclear Information System (INIS)

Pace, R.; Paix, D.; Haskard, M.

1993-01-01

Alpha radiation dosage is an important occupational health factor in the mining of uranium and mineral sands. Alpha radiation induced errors in the data of silicon based memory chips provide the foundation for a new type of sensor, with the potential for affordable and prompt measurement of personal alpha doses. With particular reference to Dynamic Random Access Memories (DRAM) this paper introduces the operating principle of a memory based radiation sensor, which is the error mechanism in silicon integrated circuits. 14 refs., 3 figs

Corrosion behaviour of 2124 aluminium alloy-silicon carbide metal matrix composites in sodium chloride environment

International Nuclear Information System (INIS)

Singh, Nirbhay; Vadera, K.K.; Ramesh Kumar, A.V.; Singh, R.S.; Monga, S.S.; Mathur, G.N.

1999-01-01

Aluminium alloy based particle reinforced metal matrix composites (MMCs) are being considered for a range of applications. Their mechanical properties have been investigated in detail, but more information about their corrosion resistance is needed. In this investigation, the corrosion behaviour of silicon carbide particulates (SiC p )-2124 aluminium metal matrix composites was studied in 3 wt% sodium chloride solution by means of electrochemical technique and optical microscope. The effects of weight percentages and particle size of silicon carbide particulates on corrosion behaviour of the composite were studied in NaCl and it was observed that corrosion rate increases linearly with the increasing weight percentage of SiC p . The corrosion rate of the MMC increases by increasing the size of SiC particles. Anodization improved corrosion resistance of the composites. (author)

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

Silver diffusion through silicon carbide in microencapsulated nuclear fuels TRISO; Difusion de plata a traves de carburo de silicio en combustibles nucleares microencapsulados TRISO

Energy Technology Data Exchange (ETDEWEB)

Cancino T, F.; Lopez H, E., E-mail: Felix.cancino@cinvestav.edu.mx [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Saltillo, Av. Industria Metalurgica No. 1062, Col. Ramos Arizpe, 25900 Saltillo, Coahuila (Mexico)

2013-10-15

The silver diffusion through silicon carbide is a challenge that has persisted in the development of microencapsulated fuels TRISO (Tri structural Isotropic) for more than four decades. The silver is known as a strong emitter of gamma radiation, for what is able to diffuse through the ceramic coatings of pyrolytic coal and silicon carbide and to be deposited in the heat exchangers. In this work we carry out a recount about the art state in the topic of the diffusion of Ag through silicon carbide in microencapsulated fuels and we propose the role that the complexities in the grain limit can have this problem. (Author)

Generation of damage cross section for silicon carbide

International Nuclear Information System (INIS)

Chang, Jonghwa; Lee, Wonjae

2013-01-01

There is practically no cross section library for current reactor physics codes which will be used for DPA calculation. Silicon carbide(SiC) is an important material used in gas-cooled reactor, advanced nuclear fuel, and fusion applications. There are more than 200 polytypes of SiC. However β-SiC, which is produced under 1700 .deg. C, is the polytype interesting for a nuclear application. This work has been carried out under the Korea-US I-NERI program supported by Korea Ministry of Education Science and Technology and US Department of Energy. Authors express gratitude to C. S. Gil of KAERI nuclear data center for NJOY processing

The Alpha Magnetic Spectrometer Silicon Tracker

CERN Document Server

Burger, W J

1999-01-01

The Alpha Magnetic Spectrometer (AMS) is designed as a independent module for installation on the International Space Station Alpha (ISSA) in the year 2002 for an operational period of three years. The principal scientific objectives are the searches for antimatter and dark matter in cosmic rays. The AMS uses 5.5 m sup 2 of silicon microstrip sensors to reconstruct charged particle trajectories in the field of a permanent magnet. The detector design and construction covered a 3 yr period which terminated with a test flight on the NASA space shuttle Discovery during June 2-12, 1988. In this contribution, we describe the shuttle version of the AMS silicon tracker, including preliminary results of the tracker performance during the flight. (author)

Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Leparoux, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)], E-mail: susanne.leparoux@empa.ch; Diot, C. [Consultant, allee de Mozart 10, F-92300 Chatillon (France); Dubach, A. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Vaucher, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)

2007-10-15

When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (1 1 1) as well as on the (1 0 0) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (1 1 1) faces of diamond while prismatic crystals are found on the (1 0 0) faces. The crystal growth seems to be favored in the plane parallel to the face (1 1 1)

Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

International Nuclear Information System (INIS)

Leparoux, S.; Diot, C.; Dubach, A.; Vaucher, S.

2007-01-01

When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (1 1 1) as well as on the (1 0 0) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (1 1 1) faces of diamond while prismatic crystals are found on the (1 0 0) faces. The crystal growth seems to be favored in the plane parallel to the face (1 1 1)

Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

International Nuclear Information System (INIS)

Schnabel, Manuel

2015-01-01

Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

Science.gov (United States)

Ueno, K.; Toibana, Y.

1984-01-01

The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

Reaction of boron carbide with molybdenum disilicide

International Nuclear Information System (INIS)

Novikov, A.V.; Melekhin, V.F.; Pegov, V.S.

1989-01-01

The investigation results of interaction in the B 4 C-MoSi 2 system during sintering in vacuum are presented. Sintering of boron carbide with molybdenum disilicide is shown to lead to the formation of MoB 2 , SiC, Mo 5 Si 3 compounds, the presence of carbon-containing covering plays an important role in sintering

DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS

International Nuclear Information System (INIS)

Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate

2013-01-01

Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

CSIR Research Space (South Africa)

Adebiyia, DI

2016-06-01

Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

Method of producing silicon carbide articles

International Nuclear Information System (INIS)

Milewski, J.V.

1985-01-01

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity

High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Science.gov (United States)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures

International Nuclear Information System (INIS)

Katoh, Yutai; Kondo, Sosuke; Snead, Lance L.

2008-01-01

Microstructures of silicon carbide were examined by transmission electron microscopy (TEM) after creep deformation under neutron irradiation. Thin strip specimens of polycrystalline and monocrystalline, chemically vapor-deposited, beta-phase silicon carbide were irradiated in the high flux isotope reactor to 0.7-4.2 dpa at nominal temperatures of 640-1080 deg. C in an elastically pre-strained bend stress relaxation configuration with the initial stress of ∼100 MPa. Irradiation creep caused permanent strains of 0.6 to 2.3 x 10 -4 . Tensile-loaded near-surface portions of the crept specimens were examined by TEM. The main microstructural features observed were dislocation loops in all samples, and appeared similar to those observed in samples irradiated in non-stressed conditions. Slight but statistically significant anisotropy in dislocation loop microstructure was observed in one irradiation condition, and accounted for at least a fraction of the creep strain derived from the stress relaxation. The estimated total volume of loops accounted for 10-45% of the estimated total swelling. The results imply that the early irradiation creep deformation of SiC observed in this work was driven by anisotropic evolutions of extrinsic dislocation loops and matrix defects with undetectable sizes

[Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

Science.gov (United States)

Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

2013-06-01

Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

Silicon vertex detector upgrade in the ALPHA experiment

CERN Document Server

Amole, C; Ashkezari, M.D; Baquero-Ruiz, M; Bertsche, W; Burrows, C; Butler, E; Capra, A; Cesar, C.L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M.C; Gill, D.R; Gutierrez, A; Hangst, J.S; Hardy, W.N; Hayden, M.E; Humphries, A.J; Isaac, C.A; Jonsell, S; Kurchaninov, L; Little, A; Madsen, N; McKenna, J.T.K; Menary, S; Napoli, S.C; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C.Ø; Robicheaux, F; Sacramento, R.L; Sampson, J.A; Sarid, E; Seddon, D; Silveira, D.M; So, C; Stracka, S; Tharp, T; Thompson, R.I; Thornhill, J; Tooley, M.P; Van Der Werf, D.P; Wells, D

2013-01-01

The Silicon Vertex Detector (SVD) is the main diagnostic tool in the ALPHA-experiment. It provides precise spatial and timing information of antiproton (antihydrogen) annihilation events (vertices), and most importantly, the SVD is capable of directly identifying and analysing single annihilation events, thereby forming the basis of ALPHA ' s analysis. This paper describes the ALPHA SVD and its upgrade, installed in the ALPHA ' s new neutral atom trap.

Silicon vertex detector upgrade in the ALPHA experiment

Energy Technology Data Exchange (ETDEWEB)

Amole, C. [Department of Physics and Astronomy, York University, Toronto, ON, M3J 1P3 (Canada); Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, V5A 1S6 (Canada); Baquero-Ruiz, M. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Bertsche, W. [School of Physics and Astronomy, University of Manchester, M13 9PL Manchester (United Kingdom); The Cockcroft Institute, Daresbury Laboratory, WA4 4AD Warrington (United Kingdom); Burrows, C. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); Butler, E. [Physics Department, CERN, CH-1211 Geneva 23 (Switzerland); Capra, A. [Department of Physics and Astronomy, York University, Toronto, ON, M3J 1P3 (Canada); Cesar, C.L. [Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); Fujiwara, M.C. [Department of Physics and Astronomy, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, V6T 1Z4 (Canada); and others

2013-12-21

The Silicon Vertex Detector (SVD) is the main diagnostic tool in the ALPHA-experiment. It provides precise spatial and timing information of antiproton (antihydrogen) annihilation events (vertices), and most importantly, the SVD is capable of directly identifying and analysing single annihilation events, thereby forming the basis of ALPHA's analysis. This paper describes the ALPHA SVD and its upgrade, installed in the ALPHA's new neutral atom trap.

Reaction sintering of a clay-containing silicon nitride bonded silicon carbide refractory

International Nuclear Information System (INIS)

Swenser, S.P.; Cheng, Y.B.

1998-01-01

Aspects of the reaction sequence for the reaction bonding of a cast refractory, which in the green state was composed of 79 wt-% SiC grit, 16 wt-% Si powder and 5 wt-% clay were established. As it was fired up to 1600 deg C in flowing N 2 (g), weight gains were noted and phase evolution was monitored by X-ray diffraction. However, details of the reaction sequence were not determined directly from this material because several reaction-bonding processes occurred simultaneously. Reaction features were ascertained by contrasting the weight changes and phase evolution in the refractory with those observed during reaction-bonding of (a) Si and clay without the SiC and (b) SiC and clay without the Si. In addition to silicon nitridation and the development of sialon phases by silicothermal and carbothermal reduction-nitridation processes, indirect evidence suggested that α-Si 3 N 4 formed by the carbothermal reduction-nitridation (CRN) of SiO(g). Copyright (1998) Australasian Ceramic Society

Structures of sub-monolayered silicon carbide films

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

Degradation of Silicon Carbide Reflective Surfaces in the LEO Environment

Science.gov (United States)

Mileti, Sandro; Coluzzi, Plinio; Marchetti, Mario

2009-01-01

Space mirrors in Low Earth Orbit (LEO) encounter a degradation problem caused by the impact of atomic oxygen (ATOX) in the space environment. This paper presents an experiment of the atomic oxygen impact degradation and UV synergic effects on ground simulation. The experiment was carried out in a dedicated ATOX simulation vacuum chamber. As target materials, a polished CVD Beta-silicon carbide (SiC) coating was investigated. The selection of silicon carbide is due to its high potential candidate as a mirror layer substrate material for its good reflectance at UV wavelengths and excellent thermal diffusivity. It has highly desirable mechanical and thermal properties and can achieve an excellent surface finish. The deposition of the coatings were on carbon-based material substrate; i.e., silicon impregnated carbon fiber composite (C/SiC). Mechanical and thermal properties of the coatings such as hardness and Coefficient of Thermal Expansion (CTE) were achieved. Several atomic oxygen impact angles were studied tilting the target samples respect to the flux direction. The various impact angles permitted to analyze the different erosion rates and typologies which the mirrors would encounter in LEO environment. The degradation was analyzed in various aspects. Macroscopic mass loss per unit area, surface roughness and morphology change were basically analyzed. The exposed surfaces of the materials were observed through a Scanning Electron Microscope (SEM). Secondly, optical diagnostic of the surfaces were performed in order to investigate their variation in optical properties as the evaluation of reflectance degradation. The presence of micro-cracks caused by shrinkage, grinding, polishing or thermal cycling and the porosity in the coatings, could have led to the undercutting phenomenon. Observation of uprising of undercutting was also conducted. Remarks are given regarding capabilities in short-term mission exposures to the LEO environment of this coating.

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

Energy Technology Data Exchange (ETDEWEB)

Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

2014-09-01

Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

Evaluation of sintering effects on SiC-incorporated UO{sub 2} kernels under Ar and Ar–4%H{sub 2} environments

Energy Technology Data Exchange (ETDEWEB)

Silva, Chinthaka M., E-mail: silvagw@ornl.gov [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee TN 37831-6223 (United States); Materials Science and Engineering, The University of Tennessee Knoxville, TN 37996-2100, United States. (United States); Lindemer, Terrence B.; Hunt, Rodney D.; Collins, Jack L.; Terrani, Kurt A.; Snead, Lance L. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee TN 37831-6223 (United States)

2013-11-15

Silicon carbide (SiC) is suggested as an oxygen getter in UO{sub 2} kernels used for tristructural isotropic (TRISO) particle fuels and to prevent kernel migration during irradiation. Scanning electron microscopy and X-ray diffractometry analyses performed on sintered kernels verified that an internal gelation process can be used to incorporate SiC in UO{sub 2} fuel kernels. Even though the presence of UC in either argon (Ar) or Ar–4%H{sub 2} sintered samples suggested a lowering of the SiC up to 3.5–1.4 mol%, respectively, the presence of other silicon-related chemical phases indicates the preservation of silicon in the kernels during sintering process. UC formation was presumed to occur by two reactions. The first was by the reaction of SiC with its protective SiO{sub 2} oxide layer on SiC grains to produce volatile SiO and free carbon that subsequently reacted with UO{sub 2} to form UC. The second process was direct UO{sub 2} reaction with SiC grains to form SiO, CO, and UC. A slightly higher density and UC content were observed in the sample sintered in Ar–4%H{sub 2}, but both atmospheres produced kernels with ∼95% of theoretical density. It is suggested that incorporating CO in the sintering gas could prevent UC formation and preserve the initial SiC content.

Effect of sintering temperature on the densification of B4C pellets

International Nuclear Information System (INIS)

Gomide, R.G.; Durazzo, M.; Riella, H.G.

1990-01-01

Boron is largely used in several types of nuclear reactors control and safety systems. In the majority of these applications sintered boron carbide pellets are used. Near stoichiometric B 4 C hardly densifies during pressureless sintering. As a starting point of an overall program to produce > 70% TD B 4 C pellets pressing parameters have been studied for further study of the influence of sintering temperature in the densification of this ceramic material. Dilatometric analyses show that sintering starts at 1760 0 C for the F 1200 ESK - type boron carbide powders. Moreover, the sintering experiments show that up to 92% TD pellets can be obtained. (author) [pt

Fine defective structure of silicon carbide powders obtained from different starting materials

Directory of Open Access Journals (Sweden)

Tomila T.V.

2006-01-01

Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

International Nuclear Information System (INIS)

Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

1998-01-01

The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

Facile synthesis of silicon carbide-titanium dioxide semiconducting nanocomposite using pulsed laser ablation technique and its performance in photovoltaic dye sensitized solar cell and photocatalytic water purification

Energy Technology Data Exchange (ETDEWEB)

Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Ilyas, A.M. [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Baig, Umair [Laser Research Group, Physics Department & Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Center of Excellence for Scientific Research Collaboration with MIT, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

2016-08-15

Highlights: • SiC–TiO{sub 2} semiconducting nanocomposites synthesized by nanosecond PLAL technique. • Synthesized nanocomposites were morphologically and optically characterized. • Nanocomposites were applied for the photocatalytic degradation of toxic organic dye. • Photovoltaic performance was investigated in dye sensitized solar cell. - Abstract: Separation of photo-generated charge carriers (electron and holes) is a major approach to improve the photovoltaic and photocatalytic performance of metal oxide semiconductors. For harsh environment like high temperature applications, ceramic like silicon carbide is very prominent. In this work, 10%, 20% and 40% by weight of pre-oxidized silicon carbide was coupled with titanium dioxide (TiO{sub 2}) to form nanocomposite semiconductor via elegant pulsed laser ablation in liquid technique using second harmonic 532 nm wavelength of neodymium-doped yttrium aluminium garnet (Nd-YAG) laser. In addition, the effect of silicon carbide concentration on the performance of silicon carbide-titanium dioxide nanocomposite as photo-anode in dye sensitized solar cell and as photocatalyst in photodegradation of methyl orange dye in water was also studied. The result obtained shows that photo-conversion efficiency of the dye sensitized solar cell was improved from 0.6% to 1.65% and the percentage of methyl orange dye removed was enhanced from 22% to 77% at 24 min under ultraviolet–visible solar spectrum in the nanocomposite with 10% weight of silicon carbide. This remarkable performance enhancement could be due to the improvement in electron transfer phenomenon by the presence of silicon carbide on titanium dioxide.

Study on Microstructures and Mechanical Properties of Foam Titanium Carbide Ceramics Fabricated by Reaction Sintering Process

Science.gov (United States)

Ma, Yana; Bao, Chonggao; Chen, Jie; Song, Suocheng; Han, Longhao

2018-05-01

Foam titanium carbide (TiC) ceramics with a three-dimensional network structure were fabricated by the reaction sintering process, in which polyurethane foam was taken as the template, and TiO2 and phenolic resin were used as the reactants. Phase, microstructures and fracture morphologies of foam TiC ceramics were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The results show that when the mass ratios of phenolic resin and TiO2 (F/T) are (0.8-1.2): 1, foam TiC ceramics with pure TiC phase can be formed. As the F/T ratios increase, crystal lattice parameters of fabricated foam TiC ceramics become bigger. When the value of F/T decreases from 1.2 to 0.8, grain size of TiC grows larger and microstructures get denser; meanwhile, the compressive strength increases from 0.10 to 1.05 MPa. Additionally, either raising the sintering temperatures or extending holding time can facilitate the completion of the reaction process and increase the compressive strength.

The suitability of silicon carbide for photocatalytic water oxidation

Science.gov (United States)

Aslam, M.; Qamar, M. T.; Ahmed, Ikram; Rehman, Ateeq Ur; Ali, Shahid; Ismail, I. M. I.; Hameed, Abdul

2018-04-01

Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is widely used in the manufacturing industry. Despite the semiconducting nature and morphology-tuned band gap, its efficacy as photocatalysts has not been thoroughly investigated. The current study reports the synthesis, characterization and the evaluation of the capability of silicon carbide for hydrogen generation from water splitting. The optical characterization of the as-synthesized powder exposed the formation of multi-wavelength absorbing entities in synthetic process. The structural analysis by XRD and the fine microstructure analysis by HRTEM revealed the cubic 3C-SiC (β-SiC) and hexagonal α-polymorphs (2H-SiC and 6H-SiC) as major and minor phases, respectively. The Mott-Schottky analysis verified the n-type nature of the material with the flat band potential of - 0.7 V. In the electrochemical evaluation, the sharp increase in the peak currents in various potential ranges, under illumination, revealed the plausible potential of the material for the oxidation of water and generation of hydrogen. The generation of hydrogen and oxygen, as a consequence of water splitting in the actual photocatalytic experiments, was observed and measured. A significant increase in the yield of hydrogen was noticed in the presence of methanol as h + scavenger, whereas a retarding effect was offered by the Fe3+ entities that served as e - scavengers. The combined effect of both methanol and Fe3+ ions in the photocatalytic process was also investigated. Besides hydrogen gas, the other evolved gasses such as methane and carbon monoxide were also measured to estimate the mechanism of the process.

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

Ti₃SiC₂ Synthesis by Powder Metallurgical Methods

OpenAIRE

Kero, Ida; Antti, Marta-Lena; Odén, Magnus

2007-01-01

Titanium silicon carbide MAX phase was synthesised by a powder metallurgical method from ball milled TiC/Si powders of two different compositions, with TiC/Si ratios of 3:2 and 3:2.2 respectively. The cold pressed samples were analysed by dilatometry under flowing argon or sintered under vacuum for different times. The sintered samples were evaluated using x-ray diffraction (XRD). This study showed that titanium carbide was always present as a secondary phase and silicon carbide accompanied t...

Locking of electron spin coherence above 20 ms in natural silicon carbide

Science.gov (United States)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

HIP (hot isostatic pressing) sintering of Tantalum (Ta) and tantalum carbide (TaC) powder mixture: relations between microstructure and properties

International Nuclear Information System (INIS)

Valin, F.; Schnedecker, M.

1994-01-01

HIP sintering at 1630 C and 195 MPa, during 2 hours, can be used for complete densification of mixtures of commercial tantalum carbide and tantalum powders. HIPed material properties are depending upon initial compositions. For C/Ta ratios inferior to 80%, the monocarbide structure is preserved. A partial ordering of the carbon vacancies will result, for TaC(0.80), in microhardness maximization. The microstructurally homogenous TaC(0.45) shows an excellent toughness. 2 figs., 2 refs

Decomposition of silicon carbide at high pressures and temperatures

Energy Technology Data Exchange (ETDEWEB)

Daviau, Kierstin; Lee, Kanani K. M.

2017-11-01

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

Ceramic design methodology and the AGT-101

Energy Technology Data Exchange (ETDEWEB)

Boyd, G.L.; Carruthers, W.D.; Evershed, R.J.; Kidwell, J.R.

1985-03-01

The Garrett/Ford Advanced Gas Turbine (AGT101) technology project has made significant progress in the areas of ceramic component design, analysis, and test evaluation using an iterative approach. Design stress limits are being defined for state-of-the-art fine ceramics with good correlation between analytical predictions and empirical results. Recent tests in both rigs and engines are demonstrating the feasibility of high temperature/strength ceramic materials in the gas turbine environment. Component transient stress fields are being defined providing the data base for lower stress/longer life component design. Thermally induced transient stresses to 220 MPa (32 ksi) in reaction bonded silicon nitride (RBSN), 310 Mpa (45 ksi) in sintered alpha silicon carbide (SASC), and 345 MPa (50 ksi) in sintered silicon nitride (SSN) have been successfully demonstrated in AGT101 component screening and qualification test rigs.

Mechanical characterization of cemented carbide WC-6Co (%wt) manufactured by SPS (Spark Plasma Sintering; Caracterizacao mecanica de metal duro WC-6Co (%massa) sinterizado via SPS (Spark Plasma Sintering)

Energy Technology Data Exchange (ETDEWEB)

Boidi, G.; Tertuliano, A.J.; Machado, I.F., E-mail: guido.boidi@usp.br [Universidade de Sao Paulo (USP), SP (Brazil). Departamento de Engenharia Mecatronica e Sistemas Mecanicos; Rodrigues, D. [BRATS- Filtros Sinterizados e Pos Metalicos, Cajamar, SP (Brazil)

2016-07-01

This work aimed to manufacture cemented carbide (WC-6%wtCo) obtained by SPS (Spark Plasma Sintering) process and to carry out the mechanical characterization by hardness and fracture toughness. The material was consolidated at 1100 deg C for different holding times (1 min, 5 min, 10 min), in order to evaluate the densification. A reference sample was also used to be compared to SPS. Optical and scanning electron microscopy were carried out to characterize the microstructural features of the samples and mechanical properties were obtained by hardness measurements (micro and macro) and instrumented indentation. The fracture toughness was calculated with the method of Palmqvist. Best results were found in the material sintered by SPS for 10 minutes of holding time, in which 97% of relative density and about 1600 HV{sub 10} was reached. (author)

Threshold irradiation dose for amorphization of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

White light emission from engineered silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan

Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

Energy Technology Data Exchange (ETDEWEB)

Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

2012-08-01

Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

Optical characterisation of cubic silicon carbide

International Nuclear Information System (INIS)

Jackson, S.M.

1998-09-01

The varied properties of Silicon Carbide (SiC) are helping to launch the material into many new applications, particularly in the field of novel semiconductor devices. In this work, the cubic form of SiC is of interest as a basis for developing integrated optical components. Here, the formation of a suitable SiO 2 buried cladding layer has been achieved by high dose oxygen ion implantation. This layer is necessary for the optical confinement of propagating light, and hence optical waveguide fabrication. Results have shown that optical propagation losses of the order of 20 dB/cm are obtainable. Much of this loss can be attributed to mode leakage and volume scattering. Mode leakage is a function of the effective oxide thickness, and volume scattering related to the surface layer damage. These parameters have been shown to be controllable and so suggests that further reduction in the waveguide loss is feasible. Analysis of the layer growth mechanism by RBS, XTEM and XPS proves that SiO 2 is formed, and that the extent, of formation depends on implant dose and temperature. The excess carbon generated is believed to exit the oxide layer by a number of varying mechanisms. The result of this appears to be a number of stable Si-C-O intermediaries that, form regions to either depth extreme of the SiO 2 layer. Early furnace tests suggest a need to anneal at, temperatures approaching the melting point of the silicon substrate, and that the quality of the virgin material is crucial in controlling the resulting oxide growth. (author)

Precision Surface Grinding of Silicon Carbide

Directory of Open Access Journals (Sweden)

Mohamed Konneh

2016-12-01

Full Text Available Silicon carbide (SiC is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. Among the engineering applications of this material, it is an excellent candidate for optic mirrors used in an Airbone Laser (ABL device. However, the low fracture toughness and extreme brittleness characteristics of SiC are predominant factors for its poor machinability. This paper presents surface grinding of SiC using diamond cup wheels to assess the performance of diamond grits with respect to the roughness produced on the machined surfaces and also the morphology of the ground work-piece. Resin bonded diamond cup wheels of grit sizes 46 µm, 76 µm and 107 µm; depth of cut of 10 µm, 20 µm and 30 µm; and feed rate of 2 mm/min, 12 mm/min and 22 mm/min were used during this machining investigation. It has been observed that the 76 grit performs better in terms of low surface roughness value and morphology.

Covalently Attached Organic Monolayers onto Silicon Carbide from 1-Alkynes: Molecular Structure and Tribological Properties

NARCIS (Netherlands)

Pujari, S.P.; Scheres, L.M.W.; Weidner, T.; Baio, J.E.; Cohen Stuart, M.A.; Rijn, van C.J.M.; Zuilhof, H.

2013-01-01

In order to achieve improved tribological and wear properties at semiconductor interfaces, we have investigated the thermal grafting of both alkylated and fluorine-containing ((CxF2x+1)–(CH2)n-) 1-alkynes and 1-alkenes onto silicon carbide (SiC). The resulting monolayers display static water contact

Influence of high sintering pressure on the microhardness and wear resistance of diamond powder and silicon carbide-based composites

Directory of Open Access Journals (Sweden)

Osipov Oleksandr Sergueevitch

2004-01-01

Full Text Available The work reported on here involved the development of several samples of "diamond-SiC" composite produced under sintering pressures of up to 9.0 GPa at temperatures of up to 1973 7K. The average size of the diamond micropowder crystals used was 40/28 µm. The sintering process was carried out in a 2500-ton hydraulic press equipped with an anvil-type high-pressure device having a toroidal work surface and a central concavity diameter of 20 mm. The microhardness and wear resistance of the samples were found to be dependent on the sintering pressure. The experimental results indicated that the maximum microhardness and minimum wear resistance coefficients of each compact were attained when the pressure applied during sintering exceeded 6.5 GPa. Based on the established values of pressure, this study served to identify the types of devices applicable for the manufacture of composite material inserts for a variety of rock drilling applications.

Body of Knowledge for Silicon Carbide Power Electronics

Science.gov (United States)

Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

2016-01-01

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

DEFF Research Database (Denmark)

Ou, Yiyu

light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... rendering performance and a much longer material lifetime compared with the commonly used wavelength-conversion material like Phosphors. In this thesis, f-SiC with different doping concentrations are analyzed and optimized in order to enhance the quantum efficiency. On the other hand, semiconductor...

On the characterisation of the dynamic compressive behaviour of silicon carbides subjected to isentropic compression experiments

Directory of Open Access Journals (Sweden)

Zinszner Jean-Luc

2015-01-01

Full Text Available Ceramic materials are commonly used as protective materials particularly due to their very high hardness and compressive strength. However, the microstructure of a ceramic has a great influence on its compressive strength and on its ballistic efficiency. To study the influence of microstructural parameters on the dynamic compressive behaviour of silicon carbides, isentropic compression experiments have been performed on two silicon carbide grades using a high pulsed power generator called GEPI. Contrary to plate impact experiments, the use of the GEPI device and of the lagrangian analysis allows determining the whole loading path. The two SiC grades studied present different Hugoniot elastic limit (HEL due to their different microstructures. For these materials, the experimental technique allowed evaluating the evolution of the equivalent stress during the dynamic compression. It has been observed that these two grades present a work hardening more or less pronounced after the HEL. The densification of the material seems to have more influence on the HEL than the grain size.

Graphene ribbon growth on structured silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

2017-11-15

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

Science.gov (United States)

Matsusue, K.; Takahara, K.; Hashimoto, R.

1984-01-01

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Fiber-reinforced ceramic matrix composites processed by a hybrid technique based on chemical vapor infiltration, slurry impregnation and spark plasma sintering

International Nuclear Information System (INIS)

Magnant, J.; Pailler, R.; Le Petitcorps, Y.; Maille, L.; Guette, A.; Marthe, J.

2013-01-01

Fabrication of multidirectional continuous carbon and silicon carbide fiber reinforced ceramic matrix composites (CMC) by a new short time hybrid process was studied. This process is based, first, on the deposition of fiber interphase and coating by chemical vapor infiltration, next, on the introduction of silicon nitride powders into the fibrous preform by slurry impregnation and, finally, on the densification of the composite by liquid phase spark plasma sintering (LP-SPS). The homogeneous introduction of the ceramic charges into the multidirectional fiber pre-forms was realized by slurry impregnation from highly concentrated and well-dispersed aqueous colloid suspensions. The chemical degradation of the carbon fibers during the fabrication was prevented by adapting the sintering pressure cycle. The composites manufactured are dense. Microstructural analyses were conducted to explain the mechanical properties achieved. One main important result of this study is that LP-SPS can be used in some hybrid processes to densify fiber reinforced CMC. (authors)

Microstructure of reactive synthesis TiC/Cr18Ni8 stainless steel bonded carbides

Institute of Scientific and Technical Information of China (English)

Jiang Junsheng; Liu Junbo; Wang Limei

2008-01-01

TiC/Cr18Ni8 steel bonded carbides were synthesized by vacuum sintering with mixed powders of iron, ferrotitanium, ferrochromium, colloidal graphite and nickel as raw materials. The microstructure and microhardness of the steel bonded carbides were analyzed by scanning electron microscope (SEM),X-ray diffraction (XRD) and Rockwell hardometer. Results show that the phases of steel bonded carbides mainly consist of TiC and Fe-Cr-Ni solid solution. The synthesized TiC particles are fine. Most of them are not more than 1 μm With the increase of sintering temperature, the porosity of TiC/Cr18Ni8 steel bonded carbides decreases and the density and hardness increase, but the size of TiC panicles slightly increases. Under the same sintering conditions, the density and hardness of steel bonded carbides with C/Ti atomic ratio 0.9 are higher than those with C/Ti atomic ratio 1.0.The TiC particles with C/Ti atomic ratio 0.9 are much finer and more homogeneous.

Manufacture of sintered bricks of high density from beryllium oxide

International Nuclear Information System (INIS)

Pointud, R.; Rispal, Ch.; Le Garec, M.

1959-01-01

Beryllium oxide bricks of nuclear purity 100 x 100 x 50 and 100 x 100 x 100 mm of very high density (between 2.85 and 3.00) are manufactured by sintering under pressure in graphite moulds at temperatures between 1,750 and 1,850 deg. C, and under a pressure of 150 kg/cm 2 . The physico-chemical state of the saw material is of considerable importance with regard to the success of the sintering operation. In addition, a study of the sintering of a BeO mixture with 3 to 5 per cent of boron introduced in the form of boric acid, boron carbide or elementary boron shows that high densities can only be obtained by sintering under pressure. For technical reasons of manufacture, only the mixture based on boron carbide is used. The sintering is carried out in graphite moulds at 1500 deg. C under 150 kg/cm 2 pressure, and bricks can be obtained with density between 2,85 and 2,90. Laboratory studies and the industrial manufacture of various sinters are described in detail. (author) [fr

Microstructure and Mechanical Properties of Highly Alloyed FeCrMoVC Steel Fabricated by Spark Plasma Sintering

Science.gov (United States)

Oh, Seung-Jin; Jun, Joong-Hwan; Lee, Min-Ha; Shon, In-Jin; Lee, Seok-Jae

2018-05-01

In this study, we successfully fabricated highly alloyed FeCrMoVC specimens within 2 min by using the spark plasma sintering (SPS) method. The densities of the sintered specimens were almost identical to their theoretical values. Fine (Mo, V)-rich carbides with lamellar structure were precipitated along the grain boundaries of the as-sintered specimen, whereas relatively large carbides were formed additionally in the transgranular region during the tempering treatment. Compared with the specimen produced by a conventional casting method, the FeCrMoVC specimens from SPS showed smaller grain size with finer carbides and higher hardness values.

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Densification rate and interfacial adhesion of bilayer cemented tungsten carbide and steel

Energy Technology Data Exchange (ETDEWEB)

Ojo-kupoluyi, Oluwatosin Job; Tahir, Suraya Mohd; Ariff, Azmah Hanim Mohamed; Baharudin, B.T. Hang Tuah [Univ. Putra Malaysia, Selangor (Malaysia). Dept. of Mechanical and Manufacturing Engineering; Matori, Khamirul Amin [Univ. Putra Malaysia, Selangor (Malaysia). Dept. of Physics; Univ. Putra Malaysia, Selangor (Malaysia). Inst. of Advanced Technology (ITMA); Shamsul Anuar, Mohd [Univ. Putra Malaysia, Selangor (Malaysia). Dept. of Process and Food Engineering

2017-12-15

Manufacturing tailored materials is commonly faced with the challenge of shrinkage mismatch between layers resulting in delamination. The effects of sintering temperature and carbon variation on the densification and interfacial bond strength of bilayer cemented tungsten carbide and steel processed through powder metallurgy are analyzed. It is revealed through field-emission scanning electron microscopy images that inter-layer diffusion induced by liquid-phase sintering plays a major role in the densification and bonding of layers. Through dimensional analysis of sintered bilayer specimens, the strain rate of cemented tungsten carbide is observed to surpass that of steel. An enhanced densification rate of 6.1 % and M{sub 6}C (eta carbide) reduction with increased carbon level results in strong interfacial bonding in specimens sintered at 1 280 C. At 1 295 C, diffusion accelerates and the axial and radial shrinkage increase by 14.05 % and 13.35 %, respectively, in 93.8 wt.% WC - 6 wt.% Fe - 0.2 wt.% C and 93.2 wt.% Fe - 6 wt.% WC - 0.8 wt.% C, thereby increasing the tendency for complete delamination.

Densification rate and interfacial adhesion of bilayer cemented tungsten carbide and steel

International Nuclear Information System (INIS)

Ojo-kupoluyi, Oluwatosin Job; Tahir, Suraya Mohd; Ariff, Azmah Hanim Mohamed; Baharudin, B.T. Hang Tuah; Shamsul Anuar, Mohd

2017-01-01

Manufacturing tailored materials is commonly faced with the challenge of shrinkage mismatch between layers resulting in delamination. The effects of sintering temperature and carbon variation on the densification and interfacial bond strength of bilayer cemented tungsten carbide and steel processed through powder metallurgy are analyzed. It is revealed through field-emission scanning electron microscopy images that inter-layer diffusion induced by liquid-phase sintering plays a major role in the densification and bonding of layers. Through dimensional analysis of sintered bilayer specimens, the strain rate of cemented tungsten carbide is observed to surpass that of steel. An enhanced densification rate of 6.1 % and M 6 C (eta carbide) reduction with increased carbon level results in strong interfacial bonding in specimens sintered at 1 280 C. At 1 295 C, diffusion accelerates and the axial and radial shrinkage increase by 14.05 % and 13.35 %, respectively, in 93.8 wt.% WC - 6 wt.% Fe - 0.2 wt.% C and 93.2 wt.% Fe - 6 wt.% WC - 0.8 wt.% C, thereby increasing the tendency for complete delamination.

Application of silicon carbide to synchrotron-radiation mirrors

International Nuclear Information System (INIS)

Takacs, P.Z.; Hursman, T.L.; Williams, J.T.

1983-09-01

Damage to conventional mirror materials exposed to the harsh synchrotron radiation (SR) environment has prompted the SR user community to search for more suitable materials. Next-generation insertion devices, with their attendant flux increases, will make the problem of mirror design even more difficult. A parallel effort in searching for better materials has been underway within the laser community for several years. The technology for dealing with high thermal loads is highly developed among laser manufacturers. Performance requirements for laser heat exchangers are remarkably similar to SR mirror requirements. We report on the application of laser heat exchanger technology to the solution of typical SR mirror design problems. The superior performance of silicon carbide for laser applications is illustrated by various material trades studies, and its superior performance for SR applications is illustrated by means of model calculations

Fabrication of chamfered uranium-plutonium mixed carbide pellets

International Nuclear Information System (INIS)

Arai, Yasuo; Iwai, Takashi; Shiozawa, Kenichi; Handa, Muneo

1985-10-01

Chamfered uranium-plutonium mixed carbide pellets for high burnup irradiation test in JMTR were fabricated in glove boxes with purified argon gas. The size of die and punch in a press was decided from pellet densities and dimensions including the angle of chamfered parts. No chip or crack caused by adopting chamfered pellets was found in both pressing and sintering stages. In addition to mixed carbide pellets, uranium carbide pellets used as insulators were also successfully fabricated. (author)

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Directory of Open Access Journals (Sweden)

Sofiane Khachroumi

2010-01-01

Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Science.gov (United States)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Latest Advances in the Generation of Single Photons in Silicon Carbide

Directory of Open Access Journals (Sweden)

Albert Boretti

2016-06-01

Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

Design of experiment approach for sintering study of nanocrystalline SiC fabricated using plasma pressure compaction

Directory of Open Access Journals (Sweden)

Bothara M.G.

2009-01-01

Full Text Available Plasma pressure compaction (P2C is a novel sintering technique that enables the consolidation of silicon carbide with a nanoscale microstructure at a relatively low temperature. To achieve a high final density with optimized mechanical properties, the effects of various sintering factors pertaining to the temperature-time profile and pressure were characterized. This paper reports a design of experiment approach used to optimize the processing for a 100 nm SiC powder focused on four sintering factors: temperature, time, pressure, and heating rate. Response variables included the density and mechanical properties. A L9 orthogonal array approach that includes the signal-to-noise (S/N ratio and analysis of variance (ANOVA was employed to optimize the processing factors. All of the sintering factors have significant effect on the density and mechanical properties. A final density of 98.1% was achieved with a temperature of 1600°C, hold time of 30 min, pressure of 50 MPa, and heating rate of 100°C/min. The hardness reached 18.4 GPa with a fracture toughness of 4.6 MPa√m, and these are comparable to reports from prior studies using higher consolidation temperatures.

Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

Science.gov (United States)

Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

2018-01-01

Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

Electrical and microstructural properties of microwave sintered SnO{sub 2}-based varistors

Energy Technology Data Exchange (ETDEWEB)

Furtado, P.S.; Oliveira, M.M.; Vasconcelos, J.S.; Rangel, J.H.G., E-mail: periclesft@ifma.edu.br, E-mail: marcelo@ifma.edu.br, E-mail: jomar@ifma.edu.br, E-mail: hiltonrangel@ifma.edu.br [IFMA-DAQ- PPGEM, S. Luis, MA (Brazil); Longo, E., E-mail: elson@iq.unesp.br [CMDMC, LIEC, Instituto de Quimica, UNESP, Araraquara, SP (Brazil); Sousa, V.C. de, E-mail: vania.sousa@ufrgs.br [DEMAT, Universidade Federal do Rio Grande do Sul - UFRGS, Porto Alegre, RS (Brazil)

2012-04-15

An investigation was made of the microstructural and electrical properties of SnO{sub 2} -based varistors microwave sintered at 1200 deg C, applying a heating rate of 120 deg C/min and treatment times of 10, 20, 30, 40, 50 and 60 min. The system used in this study was (98.95-X)%SnO{sub 2}.1.0%CoO.0.05%Cr{sub 2}O{sub 3}.X%Ta{sub 2}O{sub 5}, where X corresponds to 0.05 and 0.065 mol%. Sintering was carried out in a domestic microwave oven (2.45 GHz) fitted for lab use. Silicon carbide was placed in a refractory vessel to form a heating chamber surrounding the sample holder. The pellets were examined by scanning electron microscopy, X-ray diffractometry, direct current measurements and impedance spectroscopy. The parameters of density, medium grain size, coefficient of nonlinearity, breakdown electrical field, leakage current, and height and width of the potential barrier were analyzed. (author)

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Science.gov (United States)

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Corrosion behaviour of porous chromium carbide/oxide based ceramics in supercritical water

International Nuclear Information System (INIS)

Dong, Z.; Xin, T.; Chen, W.; Zheng, W.; Guzonas, D.

2011-01-01

Porous chromium carbide with a high density of open pores was fabricated by a reactive sintering method. Chromium oxide ceramics were obtained by re-oxidizing the porous chromium carbides formed. Some samples were added with yttria at 5 wt. %, prior to reactive sintering to form porous structures. Corrosion tests in SCW were performed at temperatures ranging from 375 o C to 625 o C with a fixed pressure at around 25∼30 MPa. The results show that chromium carbide is stable in SCW environments at temperatures up to 425 o C, above which disintegration of carbides through oxidation occurs. Porous chromium oxide samples show better corrosion resistance than porous chromium carbide, but disintegrate in SCW at around 625 o C. Among all the samples tested, chromium oxide ceramics with added yttria exhibited much better corrosion resistance compared with the pure chromium carbide/oxides. No evidence of weight change or disintegration of porous chromium oxides with 5 wt % added yttria was observed after exposure at 625 o C in SCW for 600 hours. (author)

Distribution and characterization of iron in implanted silicon carbide

International Nuclear Information System (INIS)

Bentley, J.; Romana, L.J.; Horton, L.L.; McHargue, C.J.

1991-01-01

Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal α-silicon carbide implanted at room temperature with 160 keV 57 Fe ions to fluences of 1, 3, and 6 x 10 16 ions/cm 2 . Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Moessbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600 degrees C with some redistribution of the implanted iron

Sintering study and properties of alumina matrix composites reinforced with NbC, TiC and TaC

International Nuclear Information System (INIS)

Tonello, K.P.S.; Trombini, V.; Bressiani, A.H.A.; Bressiani, J.C.

2011-01-01

Al_2O_3 based composite materials are very promising due to their good mechanical properties, and have been studied as an alternative for the production of materials with high wear resistance. In alumina based composites the addition of carbides can change and improve the sintering and mechanical properties of materials. The objective was to study the effect of adding small concentrations of NbC, TaC and TiC in the sintering, microstructure and mechanical properties of alumina composites. The sintering study was conducted in dilatometer, with heating rate of 20 ° C / min. up to 1800 ° C, and the study of microstructure and properties of the composites was performed in hot pressed samples, sintered at 1500°C/30min with constant pressure of 20MPa. The results indicated that the addition of carbides modified the sintering behavior and also indicated that the hardness and fracture toughness were improved by the presence of carbide particles. (author)

Reactive sintering and microstructure development of tungsten carbide-AISI 304 stainless steel cemented carbides

Energy Technology Data Exchange (ETDEWEB)

Fernandes, C.M. [Department of Materials and Ceramics Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); CEMUC-Mechanical Engineering Department, University of Coimbra, Rua Luís Reis Santos, Pinhal de Marrocos, 3030-788 Coimbra (Portugal); Oliveira, F.J. [Department of Materials and Ceramics Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Senos, A.M.R., E-mail: anamor@ua.pt [Department of Materials and Ceramics Engineering, CICECO, University of Aveiro, 3810-193 Aveiro (Portugal)

2017-06-01

Sintering of WC-stainless steel (SS) composites within a typical binder range from 6 up to 15 wt% SS was investigated through constant heating rate dilatometry, in vacuum conditions, complemented by differential thermal analysis and by the study of the high temperature wetting behavior of SS on WC. The densification starts ∼900 °C with a typical densification curve for all compositions, where three distinct regions are discernible: the first one with a slow densification rate, followed by a second region where a sharp increase in the densification rate up to a maximum value dependent on the binder amount is observed and, finally, a third one with a slowdown of the densification rate until the end of the thermal cycle. The attained final density at 1450 °C is dependent on the binder amount, increasing proportionally to its initial content. The final microstructure presents a normal grain size distribution and appreciable amounts of eta-phase, besides the major WC phase and residual iron rich phase. The reactive densification behavior and the role of the liquid phase are interpreted accordingly with structural and kinetic data. - Highlights: • Sintering of WC-AISI304 composites starts ∼900 °C and involves three stages. • Densification is largely dominated by a reactive liquid phase sintering process. • Eta-phase constitutes a transient liquid phase during sintering. • Sintering cycles are dependent on the initial binder content.

The etching behaviour of silicon carbide compacts

International Nuclear Information System (INIS)

Jepps, N.W.; Page, T.F.

1981-01-01

A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

Friction and wear performance of diamond-like carbon, boron carbide, and titanium carbide coatings against glass

International Nuclear Information System (INIS)

Daniels, B.K.; Brown, D.W.; Kimock, F.M.

1997-01-01

Protection of glass substrates by direct ion beam deposited diamond-like carbon (DLC) coatings was observed using a commercial pin-on-disk instrument at ambient conditions without lubrication. Ion beam sputter-deposited titanium carbide and boron carbide coatings reduced sliding friction, and provided tribological protection of silicon substrates, but the improvement factor was less than that found for DLC. Observations of unlubricated sliding of hemispherical glass pins at ambient conditions on uncoated glass and silicon substrates, and ion beam deposited coatings showed decreased wear in the order: uncoated glass>uncoated silicon>boron carbide>titanium carbide>DLC>uncoated sapphire. Failure mechanisms varied widely and are discussed. Generally, the amount of wear decreased as the sliding friction decreased, with the exception of uncoated sapphire substrates, for which the wear was low despite very high friction. There is clear evidence that DLC coatings continue to protect the underlying substrate long after the damage first penetrates through the coating. The test results correlate with field use data on commercial products which have shown that the DLC coatings provide substantial extension of the useful lifetime of glass and other substrates. copyright 1997 Materials Research Society

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

DEFF Research Database (Denmark)

Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

2014-01-01

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding...... short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account...

Mullite-based coating on silicon carbide refractory obtained from PMSQ [poly(methylsilsesquioxane)

International Nuclear Information System (INIS)

Machado, Glauson Aparecido Ferreira

2017-01-01

Silicon carbide (SiC) presents low thermal expansion, high strength and thermal conductivity. For this reason it is used as kiln furniture for materials sintering. On the other hand, SiC degrades at high temperature under aggressive atmosphere. The use of protective coatings can avoid the right exposition of SiC surface to the furnace atmosphere. Mullite can be a suitable material as protective coating because of its high corrosion resistance and thermal expansion coefficient matching that of SiC (4,7 x 10 -6 /°C e 5,3 x 10 -6 /°C, respectively). In the present work a mullite coating obtained from ceramic precursor polymer and aluminium powder was studied to be applied over SiC refractories. Compositions were prepared with 10, 20, 30 and 50% (vol.) of aluminium powder added to the polymer. They were used aluminium powders with different distributions sizes These compositions were heat treated at different thermal cycles to determine a suitable condition to obtain a high mullite content. The composition with 20% of the smaller particle size Al powder was selected and used to be applied as a suspension over SiC refractory. The applied suspension, after dried, crosslinked and heat treated, formed a mullite coating over SiC refractory. Cycles of thermal shock were performed in coated and uncoated SiC samples to compare each other. They were carried out 26 cycles of thermal shock, in the following conditions: 600°C/30 min. and air cooling to room temperature. After each thermal shock, samples were analysed by mean of optical and electron microscopy, elastic modulus was also determined. After thermal shock cycles the coating presented good adhesion and no significant damage were observed. (author)

SnO{sub 2}{sup *}CoO ceramic obtained by microwave sintering; Ceramicas de SnO{sub 2} {sup *}CoO obtidas por sinterizacao microondas

Energy Technology Data Exchange (ETDEWEB)

Bordignon, M.A.N; Moura, F.; Zaghete, M.A.; Varela, J.A.; Perazolli, L. [Universidade Estadual Paulista (UNESP), Araraquara, SP (Brazil). Chemistry Institute. Dept. de Biochemistry and Technological Chemistryl

2009-07-01

This work consists in the sintering study of CoO doped SnO{sub 2} using microwave sintering oven and silicon carbide as a susceptor. The powders were obtained by dry oxides mixture and conformed in cylindrical shapes with 6mmx8mm and green density to 60%. Then the compacts were sintering up to 1.050 deg C, using heating rate of 50 deg C/min and isotherm up to 30min. The densities obtained were above 95% for both techniques. It was observed that occurred a temperature reducing of 400 deg C and time reducing of 210min to obtain the same densities, when was used the microwave oven without the phenomena of thermal runaway. So the sintered compacts were accomplished using DRX and SEM. It was made the electrical characterization (current x voltage) and it was found to have great potential in the production of dense ceramic-based SnO{sub 2} with low resistivity to obtain electro-ceramic devices. (author)

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2017-01-01

Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

Extended vapor-liquid-solid growth of silicon carbide nanowires.

Science.gov (United States)

Rajesh, John Anthuvan; Pandurangan, Arumugam

2014-04-01

We developed an alloy catalytic method to explain extended vapor-liquid-solid (VLS) growth of silicon carbide nanowires (SiC NWs) by a simple thermal evaporation of silicon and activated carbon mixture using lanthanum nickel (LaNi5) alloy as catalyst in a chemical vapor deposition process. The LaNi5 alloy binary phase diagram and the phase relationships in the La-Ni-Si ternary system were play a key role to determine the growth parameters in this VLS mechanism. Different reaction temperatures (1300, 1350 and 1400 degrees C) were applied to prove the established growth process by experimentally. Scanning electron microscopy and transmission electron microscopy studies show that the crystalline quality of the SiC NWs increases with the temperature at which they have been synthesized. La-Ni alloyed catalyst particles observed on the top of the SiC NWs confirms that the growth process follows this extended VLS mechanism. The X-ray diffraction and confocal Raman spectroscopy analyses demonstrate that the crystalline structure of the SiC NWs was zinc blende 3C-SiC. Optical property of the SiC NWs was investigated by photoluminescence technique at room temperature. Such a new alloy catalytic method may be extended to synthesis other one-dimensional nanostructures.

Effect of deposition conditions on the properties of pyrolytic silicon carbide coatings for high-temperature gas-cooled reactor fuel particles

International Nuclear Information System (INIS)

Stinton, D.P.; Lackey, W.J.

1977-10-01

Silicon carbide coatings on HTGR microsphere fuel act as the barrier to contain metallic fission products. Silicon carbide coatings were applied by the decomposition of CH 3 SiCl 3 in a 13-cm-diam (5-in.) fluidized-bed coating furnace. The effects of temperature, CH 3 SiCl 3 supply rate and the H 2 :CH 3 SiCl 3 ratio on coating properties were studied. Deposition temperature was found to control coating density, whole particle crushing strength, coating efficiency, and microstructure. Coating density and microstructure were also partially determined by the H 2 :CH 3 SiCl 3 ratio. From this work, it appears that the rate at which high quality SiC can be deposited can be increased from 0.2 to 0.5 μm/min

Liquid Phase Sintering of (Ti,Zr)C with WC-Co.

Science.gov (United States)

Ma, Taoran; Borrajo-Pelaez, Rafael; Hedström, Peter; Blomqvist, Andreas; Borgh, Ida; Norgren, Susanne; Odqvist, Joakim

2017-01-11

(Ti,Zr)C powder was sintered with WC-Co following an industrial process, including an isotherm at 1410 °C. A series of interrupted sintering trials was performed with the aim of studying the sintering behavior and the microstructural evolution during both solid-state and liquid-state sintering. Reference samples, using the same elemental compositions but with the starting components TiC and ZrC instead of (Ti,Zr)C, were also sintered. The microstructure was investigated using scanning electron microscopy and energy dispersive X-ray spectroscopy. It is found that the (Ti,Zr)C phase decomposes into Ti-rich and Zr-rich nano-scale lamellae before the liquid-state of the sintering initiates. The final microstructure consists of the binder and WC as well as two different γ phases, rich in either Ti (γ₁) or Zr (γ₂). The γ₂ phase grains have a core-shell structure with a (Ti,Zr)C core following the full sintering cycle. The major differences observed in (Ti,Zr)C with respect to the reference samples after the full sintering cycle were the referred core-shell structure and the carbide grain sizes; additionally, the microstructural evolution during sintering differs. The grain size of carbides (WC, γ₁, and γ₂) is about 10% smaller in WC-(Ti,Zr)C-Co than WC-TiC-ZrC-Co. The shrinkage behavior and hardness of both composites are reported and discussed.

Liquid Phase Sintering of (Ti,ZrC with WC-Co

Directory of Open Access Journals (Sweden)

Taoran Ma

2017-01-01

Full Text Available (Ti,ZrC powder was sintered with WC-Co following an industrial process, including an isotherm at 1410 °C. A series of interrupted sintering trials was performed with the aim of studying the sintering behavior and the microstructural evolution during both solid-state and liquid-state sintering. Reference samples, using the same elemental compositions but with the starting components TiC and ZrC instead of (Ti,ZrC, were also sintered. The microstructure was investigated using scanning electron microscopy and energy dispersive X-ray spectroscopy. It is found that the (Ti,ZrC phase decomposes into Ti-rich and Zr-rich nano-scale lamellae before the liquid-state of the sintering initiates. The final microstructure consists of the binder and WC as well as two different γ phases, rich in either Ti (γ1 or Zr (γ2. The γ2 phase grains have a core-shell structure with a (Ti,ZrC core following the full sintering cycle. The major differences observed in (Ti,ZrC with respect to the reference samples after the full sintering cycle were the referred core-shell structure and the carbide grain sizes; additionally, the microstructural evolution during sintering differs. The grain size of carbides (WC, γ1, and γ2 is about 10% smaller in WC-(Ti,ZrC-Co than WC-TiC-ZrC-Co. The shrinkage behavior and hardness of both composites are reported and discussed.

Interaction of noble-metal fission products with pyrolytic silicon carbide

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1982-01-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain layers of pyrolytic carbon and silicon carbide, which act as a miniature pressure vessel and form the primary fission product barrier. Of the many fission products formed during irradiation, the noble metals are of particular interest because they interact significantly with the SiC layer and their concentrations are somewhat higher in the low-enriched uranium fuels currently under consideration. To study fission product-SiC interactions, particles of UO 2 or UC 2 are doped with fission product elements before coating and are then held in a thermal gradient up to several thousand hours. Examination of the SiC coatings by TEM-AEM after annealing shows that silver behaves differently from the palladium group

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

Science.gov (United States)

Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

2013-01-01

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

Encapsulating of high-level radioactive waste with use of pyrocarbon and silicon carbide coatings

International Nuclear Information System (INIS)

Chernikov, A.

2007-01-01

It is known that high-level radioactive waste (HLW) constitute a real danger to biosphere, especially that their part, which contains transuranium and long-lived radionuclides resulting during reprocessing of nuclear fuel industrial and power reactors. Such waste contains approximately 99 % of long-lived fission products and transplutonium elements. At present, the concept of multi barrier protection of biosphere from radioactive waste is generally acknowledged. The main barriers are the physicochemical form of waste and enclosing strata of geological formation at places of waste-disposal. Applied methods of solidification of HLW with preparation of phosphatic and borosilicate glasses do not guarantee in full measure safety of places of waste-disposal of solidified waste in geological formations during thousand years. One promising way to improve HLW handling safety is placing of radionuclides in mineral-like matrixes similar to natural materials. The other possible way to increase safety of HLW disposal places is suggested for research by experts of Russian research institutes, for example, in the proposal for the Project of ISTC and considered in the present report, is to introduce an additional barrier on a radionuclides migration path by coating of HLW particles. Unique protective properties of pyrocarbon and silicon carbide such as low coefficients of diffusion of gaseous and solid fission products and high chemical and radiation stability [1] attract attention to these materials for coating of solidified HLW. The objective of the Project is the development of method of HLW encapsulating with use of pyrocarbon and silicon carbide coatings. To gain this end main direction of researches, including analysis of various encapsulation processes of fractionated HLW, and expected results are presented. Realization of the Project will allow to prove experimentally the efficiency of the proposed approach in the solution of the problem of HLW conditioning and ecological

Synthesis and characterisation of star polymer/silicon carbide nanocomposites

International Nuclear Information System (INIS)

Majewski, Peter; Choudhury, Namita Roy; Spori, Doris; Wohlfahrt, Ellen; Wohlschloegel, Markus

2006-01-01

A new type of composite material's preparation and property are reported in this paper. The composite was formed by solution blending a styrene ethylene butylenes (SEBS) star polymer with silicon carbide at various compositions. The composites were characterised using spectroscopic, microscopic and thermal techniques. Photo-acoustic Fourier transform infrared spectroscopy (PA-FT-IR) and transmission electron microscopy (TEM) results show that the SiC resides uniformly in the organic network. Thermogravimetric analysis (TGA) of the hybrid shows that the thermal stability of the composite is higher than that of the star polymer. The maximum decomposition temperature increases by 73 deg. C. Dynamic mechanical analysis (DMA) of the hybrid shows that the storage modulus of the star polymer increases after the composite formation, indicating the existence of thermodynamically stable SiC nanoparticles mostly in the micro-phase separated multiarm structure of the polymer

Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Speck, Florian; Ostler, Markus; Wanke, Martina; Seyller, Thomas [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Technische Universitaet Chemnitz, Institut fuer Physik (Germany); Besendoerfer, Sven [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Krone, Julia [Technische Universitaet Chemnitz, Institut fuer Physik (Germany)

2017-11-15

Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are determined by the targeted application. Growth of so-called epitaxial graphene on silicon carbide by sublimation of silicon in an argon atmosphere is one particular method that could potentially lead to electronic applications. In this contribution we summarize our recent work on different aspects of epitaxial graphene growth and interface manipulation by intercalation, which was performed by a combination of low-energy electron microscopy, low-energy electron diffraction, atomic force microscopy and photoelectron spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

Directory of Open Access Journals (Sweden)

D. Simin

2016-07-01

Full Text Available We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-^{28}SiC and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/sqrt[Hz] within a volume of 3×10^{-7}mm^{3} at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm^{3}, the projection noise limit is below 100  fT/sqrt[Hz].

Silicon carbide devices: more reliability for transmission and distribution systems; Dispositivos de SiC: mais confiabilidade para sistemas de transmissao e distribuicao

Energy Technology Data Exchange (ETDEWEB)

Basset, Roger; Ballad, John [Areva T and D Tecnology Centre (United Kingdom)

2006-05-15

The silicon carbide power semiconductors will represent an essential role in relation to electrical nets in the future. Counting with higher voltage levels, more rapid commutations and allowing higher temperatures then the current silicon semiconductors, they will result in power electronic equipment with lower dissipation and smaller amount of components, becoming more compacts and reliable.

Friction and Wear of Metals With a Single-Crystal Abrasive Grit of Silicon Carbide - Effect of Shear Strength of Metal

National Research Council Canada - National Science Library

Miyoshi, Kazuhisa

1978-01-01

An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...

Silicon Carbide Defect Qubits/Quantum Memory with Field-Tuning: OSD Quantum Science and Engineering Program (QSEP)

Science.gov (United States)

2017-08-01

TECHNICAL REPORT 3073 August 2017 Silicon Carbide Defect Qubits/Quantum Memory with Field-tuning: OSD Quantum Science and Engineering Program...Quantum Science and Engineering Program) by the Advanced Concepts and Applied Research Branch (Code 71730), the Energy and Environmental Sustainability...the Secretary of Defense (OSD) Quantum Science and Engineering Program (QSEP). Their collaboration topic was to examine the effect of electric-field

Process for the preparation of fine grain metal carbide powders

International Nuclear Information System (INIS)

Gortsema, F.P.

1976-01-01

Fine grain metal carbide powders are conveniently prepared from the corresponding metal oxide by heating in an atmosphere of methane in hydrogen. Sintered articles having a density approaching the theoretical density of the metal carbide itself can be fabricated from the powders by cold pressing, hot pressing or other techniques. 8 claims, no drawings

Silicon Carbide Printed Structures

Data.gov (United States)

National Aeronautics and Space Administration — The plan is to design a process that will allow precision fabrication of SiC structures using a sterolithographty printer and an oven process to sinter the material...

Threshold irradiation dose for amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1997-01-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Optical spectroscopy of vacancy related defects in silicon carbide generated by proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Kasper, C.; Sperlich, A.; Simin, D.; Astakhov, G.V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Kraus, H. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); Makino, T.; Sato, S.I.; Ohshima, T. [Japan Atomic EnergyAgency, Takasaki, Gunma (Japan); Dyakonov, V. [Experimental Physics VI, Julius Maximilian University of Wuerzburg (Germany); ZAE Bayern, Wuerzburg (Germany)

2016-07-01

Defects in silicon carbide (SiC) received growing attention in recent years, because they are promising candidates for spin based quantum information processing. In this study we examine silicon vacancies in 4H-SiC crystals generated by proton irradiation. By the use of confocal microscopy the implantation depth of Si vacancies for varying proton energies can be verified. An important issue is to ascertain the nature and distribution of the defects. For this purpose, we use the characteristic photoluminescence spectrum of Si vacancies, whose intensity is proportional to the defect density. Using xyz-scans, where the photoluminescence at each mapping point is recorded, one can thus determine the vacancies nature and their distribution in the SiC crystal. Additionally we verify the nature of the examined defects by measuring their uniquely defined zero-field-splitting by using ODMR associated with defect spins.

The preparation of titanium-vanadium carbide/nickel cermets. Technical report

International Nuclear Information System (INIS)

Precht, W.; Sprissler, B.

1976-01-01

Titanium/vanadium alloy carbide rods were prepared by a zone melting procedure. Wetting studies were carried out using sections of the fused rods and candidate matrix material. It was established that nickel exhibits excellent wetting of (Ti, V) C, and accordingly cermet blends were prepared and liquid phase sintered. Processing parameters are discussed as well as their effect on the final microstructure. Alternate methods for cermet preparation are offered which use as received titanium carbide and vanadium carbide powders

Fabrication and characterization of reaction bonded silicon carbide/carbon nanotube composites

International Nuclear Information System (INIS)

Thostenson, Erik T; Karandikar, Prashant G; Chou, T.-W.

2005-01-01

Carbon nanotubes have generated considerable excitement in the scientific and engineering communities because of their exceptional mechanical and physical properties observed at the nanoscale. Carbon nanotubes possess exceptionally high stiffness and strength combined with high electrical and thermal conductivities. These novel material properties have stimulated considerable research in the development of nanotube-reinforced composites (Thostenson et al 2001 Compos. Sci. Technol. 61 1899, Thostenson et al 2005 Compos. Sci. Technol. 65 491). In this research, novel reaction bonded silicon carbide nanocomposites were fabricated using melt infiltration of silicon. A series of multi-walled carbon nanotube-reinforced ceramic matrix composites (NT-CMCs) were fabricated and the structure and properties were characterized. Here we show that carbon nanotubes are present in the as-fabricated NT-CMCs after reaction bonding at temperatures above 1400 deg. C. Characterization results reveal that a very small volume content of carbon nanotubes, as low as 0.3 volume %, results in a 75% reduction in electrical resistivity of the ceramic composites. A 96% decrease in electrical resistivity was observed for the ceramics with the highest nanotube volume fraction of 2.1%

FLiNaK compatibility studies with Inconel 600 and silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Yoder, Graydon L., E-mail: yodergljr@ornl.gov [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Heatherly, Dennis; Wilson, Dane [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Caja, Mario [Electrochemical Systems, Inc. (ESI), 9320 Collingwood Rd., Knoxville, TN 37922 (United States)

2016-10-15

Highlights: • A versatile experimental design has been developed to examine liquid fluoride salt materials compatibility behavior. • Samples of silicon carbide and a grafoil/nickel spiral wound gasket were exposed to FLiNaK salt at 700 °C for 90 days and showed no degradation. • Alloy 600 showed material effects penetrating up to 300 μm below the salt interface after exposure to the salt for 90 days at 700 °C. • Comparison of the Alloy 600 corrosion results with existing data indicated that results were comparable to the few corrosion results available for Alloy 600. • Sapphire viewing windows incorporated in the experiment showed fogging by condensed salt components at the highest test temperatures. - Abstract: A small liquid fluoride salt test apparatus has been constructed and testing has been conducted to examine the compatibility of silicon carbide (SiC), Inconel 600 and a spiral wound gasket material in FLiNaK, the ternary eutectic alkaline metal fluoride salt mixture. These tests were conducted to evaluate materials and sealing systems that could be used in fluoride salt systems. Three months of testing at 700 °C was conducted to assure that these materials and seals would be acceptable when operating under prototypic operating conditions. The SiC specimens showed little or no change over the test period, while the spiral wound gasket material did not show any degradation except that salt might have been seeping into the outermost spirals of the gasket. The Inconel 600 specimens showed regions of voiding which penetrated the specimen surface to about 250 μm in depth. Analysis indicated that the salt had leached chrome from the Inconel surface, as was expected for this material.

Single Side Electrolytic In-Process Dressing (ELID) Grinding with Lapping Kinematics of Silicon Carbide

Science.gov (United States)

Khoshaim, Ahmed Bakr

The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.

The effect of sintering time on synthesis of in situ submicron {alpha}-Al{sub 2}O{sub 3} particles by the exothermic reactions of CuO particles in molten pure Al

Energy Technology Data Exchange (ETDEWEB)

Dikici, Burak, E-mail: burakdikici@yyu.edu.tr [Yuzuncu Yil University, Department of Mechanical Engineering, 65080 Van (Turkey); Gavgali, Mehmet [Ataturk University, Department of Mechanical Engineering, 25240 Erzurum (Turkey)

2013-02-25

Highlights: Black-Right-Pointing-Pointer Al-Cu/Al{sub 2}O{sub 3} composites were prepared successfully by means of hot pressing method. Black-Right-Pointing-Pointer Sintering time of the Al-CuO system effect the reaction rate and formation of Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Increase in sintering time accelerates formation of submicron in situ {alpha}-Al{sub 2}O{sub 3} phase. Black-Right-Pointing-Pointer Hardness of the sintered composite for 30 min at 1000 Degree-Sign C increased from 60 to 174 HV. - Abstract: In this study, in situ {alpha}-Al{sub 2}O{sub 3} reinforcing particles have been successfully synthesised in an Al-Cu matrix alloy by means of the conventional Hot Pressing (HP) method. The effect of sintering time on the forming of the {alpha}-Al{sub 2}O{sub 3} phase at 1000 Degree-Sign C was investigated using Differential Thermal Analysis (DTA), X-ray Diffraction (XRD) and a Scanning Electron Microscope (SEM). The sintered composites contained thermodynamically stable {alpha}-Al{sub 2}O{sub 3} particles and {theta}-Al{sub 2}Cu eutectic phases, which were embedded in the Al-Cu matrix. The in situ {alpha}-Al{sub 2}O{sub 3} particles were generally spherical and their mean size was observed to be less than 0.5 {mu}m. The results showed that sintering time influences not only the reaction rate of copper and the formation of Al{sub 2}O{sub 3}. Also, an increase in the sintering time accelerates the formation of submicron in situ {alpha}-Al{sub 2}O{sub 3} particles and decreases the quantity of {theta}-Al{sub 2}Cu intermetallic phase in the liquid aluminium. Additionally, sintering of composite for 30 min at 1000 Degree-Sign C increased the hardness from 60 to 174 HV.

RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

International Nuclear Information System (INIS)

Irwin, R.B.

1984-01-01

Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors

Science.gov (United States)

Kim, Myeongjin; Yoo, Youngjae; Kim, Jooheon

2014-11-01

Synthesis of microsphere silicon carbide/nanoneedle MnO2 (SiC/N-MnO2) composites for use as high-performance materials in supercapacitors is reported herein. The synthesis procedure involves the initial treatment of silicon carbide (SiC) with hydrogen peroxide to obtain oxygen-containing functional groups to provide anchoring sites for connection of SiC and the MnO2 nanoneedles (N-MnO2). MnO2 nanoneedles are subsequently formed on the SiC surface. The morphology and microstructure of the as-prepared composites are characterized via X-ray diffractometry, field-emission scanning electron microscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The characterizations indicate that MnO2 nanoneedles are homogeneously formed on the SiC surface in the composite. The capacitive properties of the as-prepared SiC/N-MnO2 electrodes are evaluated using cyclic voltammetry, galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy in a three-electrode experimental setup using a 1-M Na2SO4 aqueous solution as the electrolyte. The SiC/N-MnO2(5) electrode, for which the MnO2/SiC feed ratio is 5:1, displays a specific capacitance as high as 273.2 F g-1 at 10 mV s-1.

On the use of Raman spectroscopy and instrumented indentation for characterizing damage in machined carbide ceramics

Science.gov (United States)

Groth, Benjamin Peter

Machining is a necessary post-processing step in the manufacturing of many ceramic materials. Parts are machined to meet specific dimensions, with tight tolerances, not attainable from forming alone, as well as to achieve a desired surface finish. However, the machining process is very harsh, often employing the use of high temperatures and pressures to achieve the wanted result. In the case of silicon carbide, a material with extremely high hardness and stiffness, machining is very difficult and requires machining conditions that are highly aggressive. This can leave behind residual stresses in the surface of the material, cause unwanted phase transformations, and produce sub-surface deformation that can lead to failure. This thesis seeks to determine the effect of various machining conditions on the Raman spectra and elastic properties of sintered silicon carbide materials. Sample sets examined included hot-pressed silicon carbide tiles with four different surface finishes, as well as "ideal" single crystal silicon carbide wafers. The surface finishes studied were as follows: an as-pressed finish; a grit blast finish; a harsh rotary ground finish; and a mirror polish. Each finish imparts a different amount, as well as type, of deformation to the sample and are each utilized for a specific application. The sample surfaces were evaluated using a combination of Raman spectroscopy, for phase identification and stress analysis, and nanoindentation, for obtaining elastic properties and imparting uniform controlled deformation to the samples. Raman spectroscopy was performed over each sample surface using 514- and 633-nm wavelength excitation, along with confocal and non-confocal settings to study depth variation. Surfaces stresses were determined using peak shift information extracted from Raman spectra maps, while other spectral variations were used to compare levels of machining damage. Elastic modulus, hardness, and plastic work of indentation maps were generated

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Energy Technology Data Exchange (ETDEWEB)

King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2015-09-15

Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

SILICON CARBIDE MICRO-DEVICES FOR COMBUSTION GAS SENSING UNDER HARSH CONDITIONS

Energy Technology Data Exchange (ETDEWEB)

Ruby N. Ghosh; Peter Tobias; Roger G. Tobin

2004-04-01

A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. Robust metallization and electrical contacting techniques have been developed for device operation at elevated temperatures. To characterize the time response of the sensor responses in the millisecond range, a conceptually new apparatus has been built. Software has been developed to cope with the requirements of fast sensor control and data recording. In addition user friendly software has been developed to facilitate use of the SiC sensors for industrial process control applications.

Fracture mechanics of ceramics. Vol. 8. Microstructure, methods, design, and fatigue

International Nuclear Information System (INIS)

Bradt, R.C.; Evans, A.G.; Hasselman, D.P.H.; Lange, F.F.

1986-01-01

This paper presents information on the following topics: fracture mechanics and microstructures; non-lubricated sliding wear of Al 2 O 3 , PSZ and SiC; mixed-mode fracture of ceramics; some fracture properties of alumina-containing electrical porcelains; transformation toughening in the Al 2 O 3 -Cr 2 O 3 /ZrO 2 -HfO 2 system; strength toughness relationships for transformation toughened ceramics; tensile strength and notch sensitivity of Mg-PSZ; fracture mechanisms in lead zirconate titanate ceramics; loading-unloading techniques for determining fracture parameters of brittle materials utilizing four-point bend, chevron-notched specimens; application of the potential drop technique to the fracture mechanics of ceramics; ceramics-to-metal bonding from a fracture mechanics perspective; observed changes in fracture strength following laser irradiation and ion beam mixing of Ni overlayers on sintered alpha-SiC; crack growth in single-crystal silicon; a fracture mechanics and non-destructive evaluation investigation of the subcritical-fracture process in rock; slow crack growth in sintered silicon nitride; uniaxial tensile fatigue testing of sintered silicon carbide under cyclic temperature change; and effect of surface corrosion on glass fracture

RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

International Nuclear Information System (INIS)

Intarasiri, S.; Kamwanna, T.; Hallen, A.; Yu, L.D.; Janson, M.S.; Thongleum, C.; Possnert, G.; Singkarat, S.

2006-01-01

For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He 2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I 8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 deg. C had quite limited effect on the redistribution of carbon in silicon

On the sintering behaviour of steel bonded TiC-Cr3C2 and TiC-Cr3C2-WC mixed carbides

International Nuclear Information System (INIS)

Stojanov, L.G.; Exner, H.E.

1978-01-01

Powder mixtures of TiC+Cr 3 C 2 and TiC+Cr 3 C 2 + WC were hot pressed to nearly full density. The lattice parameter of the resulting cubic mixed crystal decreases linearly with increasing additions of Cr 3 C 2 and (Cr 3 C 2 +WC 1:1). Microhardness increases with Cr 3 C 2 content up to 20 wt.%. By addition of WC, microhardness is increased further and reaches a maximum value of approx. 38 000 MN/m 2 for 20 wt.% Cr 3 C 2 and 20 wt.% WC. From these solid solutions powder compositions of Ferro-TiC type were produced by milling with 55 wt.% Fe and 0.4 wt.% C. The sintering behaviour of these powders was studied in a vacuum dilatometer. The pronounced increase of shrinkage by Cr 3 C 2 and higher amounts of Cr 3 C 2 +WC dissolved in TiC previous to binder phase melting is attributed to the increased solubility of the carbide in solid iron. Presintering at 700 0 C in hydrogen has a negative influence on sintering activity and requires much higher temperatures for complete densification during subsequent vacuum sintering. (orig.) [de

Microstructure and orientation effects on properties of discontinuous silicon carbide/aluminum composites

Science.gov (United States)

Mcdanels, D. L.; Hoffman, C. A.

1984-01-01

Composite panels containing up to 40 vol % discontinuous silicon carbide SiC whisker, nodule, or particulate reinforcement in several aluminum matrices are commercially fabricated and the mechanical properties and microstructual characteristics are evaluated. The yield and tensile strengths and the ductility are controlled primarily by the matrix alloy, the temper condition, and the reinforcement content. Particulate and nodule reinforcements are as effective as whisker reinforcement. Increased ductility is attributed to purer, more uniform starting materials and to more mechanical working during fabrication. Comparing mechanical properties with those of other aluminum alloys shows that these low cost, lightweight composites demonstrate very good potential for application to aerospace structures.

Evolution of Shock Waves in Silicon Carbide Rods

International Nuclear Information System (INIS)

Balagansky, I. A.; Balagansky, A. I.; Razorenov, S. V.; Utkin, A. V.

2006-01-01

Evolution of shock waves in self-bonded silicon carbide bars in the shape of 20 mm x 20 mm square prisms of varying lengths (20 mm, 40 mm, and 77.5 mm) is investigated. The density and porosity of the test specimens were 3.08 g/cm3 and 2%, respectively. Shock waves were generated by detonating a cylindrical shaped (d=40 mm and 1=40 mm) stabilized RDX high explosive charge of density 1.60 g/cm3. Embedded manganin gauges at various distances from the impact face were used to monitor the amplitude of shock pressure profiles. Propagation velocity of the stress pulse was observed to be equal to the elastic bar wave velocity of 11 km/s and was independent of the amplitude of the impact pulse. Strong fuzziness of the stress wave front is observed. This observation conforms to the theory on the instability of the shock formation in a finite size elastic body. This phenomenon of wave front fuzziness may be useful for desensitization of heterogeneous high explosives

Thermo-Mechanical Properties of Unsaturated Polyester Reinforced with SiliconCarbide Powder And with Chopped Glass Fiber

Directory of Open Access Journals (Sweden)

Bushra Hosnie Musa

2018-02-01

Full Text Available The work studied the effectoffine silicon carbide (SiC powder with (0,3,5,7wt % on the thermal conductivity and mechanical properties of unsaturated polyester composite in the presence of a fixed amount of chopped glass fiber. The hand lay-up technique was employed to preparethe required samples. Results showed that tensile, impact strength and thermal conductivity increased with increasing the weight fraction of reinforced materials.

Influence of spark plasma sintering conditions on the sintering and functional properties of an ultra-fine grained 316L stainless steel obtained from ball-milled powder

Energy Technology Data Exchange (ETDEWEB)

Keller, C., E-mail: clement.keller@insa-rouen.fr [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Tabalaiev, K.; Marnier, G. [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Noudem, J. [Laboratoire de Cristallographie des Matériaux, CNRS-UMR 6508, Université de Caen, ENSICAEN, 7 bd du Maréchal Juin, 14050 Caen (France); Sauvage, X. [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Hug, E. [Laboratoire de Cristallographie des Matériaux, CNRS-UMR 6508, Université de Caen, ENSICAEN, 7 bd du Maréchal Juin, 14050 Caen (France)

2016-05-17

In this work, 316L samples with submicrometric grain size were sintered by spark plasma sintering. To this aim, 316L powder was first ball-milled with different conditions to obtain nanostructured powder. The process control agent quantity and milling time were varied to check their influence on the crystallite size of milled powder. Samples were then sintered by spark plasma sintering using different sets of sintering parameters (temperature, dwell time and pressure). For each sample, grain size and density were systematically measured in order to investigate the influence of the sintering process on these two key microstructure parameters. Results show that suitable ball-milling and subsequent sintering can be employed to obtain austenitic stainless steel samples with grain sizes in the nanometer range with porosity lower than 3%. However, ball-milling and subsequent sintering enhance chromium carbides formation at the sample surface in addition to intragranular and intergranular oxides in the sample as revealed by X-ray diffraction and transmission electron microscopy. It has been shown that using Boron nitride together with graphite foils to protect the mold from powder welding prevent such carbide formation. For mechanical properties, results show that the grain size refinement strongly increases the hardness of the samples without deviation from Hall-Petch relationship despite the oxides formation. For corrosion resistance, grain sizes lower than a few micrometers involve a strong decrease in the pitting potential and a strong increase in passivation current. As a consequence, spark plasma sintering can be considered as a promising tool for ultra-fine grained austenitic stainless steel.

3C-Silicon Carbide Microresonators for Timing and Frequency Reference

Directory of Open Access Journals (Sweden)

Graham S. Wood

2016-11-01

Full Text Available In the drive to miniaturise and integrate reference oscillator components, microelectromechanical systems (MEMS resonators are excellent candidates to replace quartz crystals. Silicon is the most utilised resonator structural material due to its associated well-established fabrication processes. However, when operation in harsh environments is required, cubic silicon carbide (3C-SiC is an excellent candidate for use as a structural material, due to its robustness, chemical inertness and high temperature stability. In order to actuate 3C-SiC resonators, electrostatic, electrothermal and piezoelectric methods have been explored. Both electrothermal and piezoelectric actuation can be accomplished with simpler fabrication and lower driving voltages, down to 0.5 V, compared to electrostatic actuation. The vibration amplitude at resonance can be maximised by optimising the design and location of the electrodes. Electrical read out of the resonator can be performed with electrostatic or piezoelectric transduction. Finally, a great deal of research has focused on tuning the resonant frequency of a 3C-SiC resonator by adjusting the DC bias applied to the electrodes, with a higher (up to 160-times tuning range for electrothermal tuning compared to piezoelectric tuning. Electrothermal tuning lowers the frequency, while piezoelectric tuning can be used to raise the frequency.

Influence of binders on infrared laser ablation of powdered tungsten carbide pressed pellets in comparison with sintered tungsten carbide hardmetals studied by inductively coupled plasma atomic emission spectrometry

International Nuclear Information System (INIS)

Hola, Marketa; Otruba, Vitezslav; Kanicky, Viktor

2006-01-01

Laser ablation (LA) was studied as a sample introduction technique for the analysis of powdered and sintered tungsten carbides (WC/Co) by inductively coupled plasma optical emission spectrometry (ICP-OES). The possibility to work with powdered and compact materials with close chemical composition provided the opportunity to compare LA sampling of similar substances in different forms that require different preparation procedures. Powdered WC/Co precursors of sintered hardmetals were prepared for the ablation as pressed pellets with and without powdered silver as a binder, while sintered hardmetal blocks were embedded into a resin to obtain discs, which were then smoothed and polished. A Q-switched Nd:YAG laser operated at its fundamental wavelength of 1064 nm with a pulse frequency of 10 Hz and maximum pulse energy of 220 mJ was used. A single lens was used for the laser beam focusing. An ablation cell (14 cm 3 ) mounted on a PC-controlled XY-translator was connected to an ICP spectrometer Jobin Yvon 170 Ultrace (laterally viewed ICP, mono- and polychromator) using a 1.5-m tubing (4 mm i.d.). Ablation was performed in a circular motion (2 mm diameter). Close attention was paid to the study of the crater parametres depending on hardness, cohesion and Ag binder presence in WC/Co samples. The influence of the Co content on the depth and structure of the ablation craters of the binderless pellets was also studied. Linear calibration plots of Nb, Ta and Ti were obtained for cemented WC/Co samples, binderless and binder-containing pellets. Relative widths of uncertainty intervals about the centroids vary between ± 3% and ± 7%, and exceptionally reach a value above 10%. The lowest determinable quantities (LDQ) of Nb, Ta and Ti calculated from the calibration lines were less than 0.5% (m/m). To evaluate the possibility of quantitative elemental analysis by LA-ICP-OES, two real sintered WC/Co samples and two real samples of powdered WC/Co materials were analysed. The

Influence of binders on infrared laser ablation of powdered tungsten carbide pressed pellets in comparison with sintered tungsten carbide hardmetals studied by inductively coupled plasma atomic emission spectrometry

Energy Technology Data Exchange (ETDEWEB)

Hola, Marketa [Research Centre for Environmental Chemistry and Ecotoxicology and Laboratory of Atomic Spectrochemistry, Faculty of Science, Masaryk University in Brno, Kotlarska 2, CZ 611 37 Brno (Czech Republic); Otruba, Vitezslav [Research Centre for Environmental Chemistry and Ecotoxicology and Laboratory of Atomic Spectrochemistry, Faculty of Science, Masaryk University in Brno, Kotlarska 2, CZ 611 37 Brno (Czech Republic); Kanicky, Viktor [Research Centre for Environmental Chemistry and Ecotoxicology and Laboratory of Atomic Spectrochemistry, Faculty of Science, Masaryk University in Brno, Kotlarska 2, CZ 611 37 Brno (Czech Republic)]. E-mail: viktork@chemi.muni.cz

2006-05-15

Laser ablation (LA) was studied as a sample introduction technique for the analysis of powdered and sintered tungsten carbides (WC/Co) by inductively coupled plasma optical emission spectrometry (ICP-OES). The possibility to work with powdered and compact materials with close chemical composition provided the opportunity to compare LA sampling of similar substances in different forms that require different preparation procedures. Powdered WC/Co precursors of sintered hardmetals were prepared for the ablation as pressed pellets with and without powdered silver as a binder, while sintered hardmetal blocks were embedded into a resin to obtain discs, which were then smoothed and polished. A Q-switched Nd:YAG laser operated at its fundamental wavelength of 1064 nm with a pulse frequency of 10 Hz and maximum pulse energy of 220 mJ was used. A single lens was used for the laser beam focusing. An ablation cell (14 cm{sup 3}) mounted on a PC-controlled XY-translator was connected to an ICP spectrometer Jobin Yvon 170 Ultrace (laterally viewed ICP, mono- and polychromator) using a 1.5-m tubing (4 mm i.d.). Ablation was performed in a circular motion (2 mm diameter). Close attention was paid to the study of the crater parametres depending on hardness, cohesion and Ag binder presence in WC/Co samples. The influence of the Co content on the depth and structure of the ablation craters of the binderless pellets was also studied. Linear calibration plots of Nb, Ta and Ti were obtained for cemented WC/Co samples, binderless and binder-containing pellets. Relative widths of uncertainty intervals about the centroids vary between {+-} 3% and {+-} 7%, and exceptionally reach a value above 10%. The lowest determinable quantities (LDQ) of Nb, Ta and Ti calculated from the calibration lines were less than 0.5% (m/m). To evaluate the possibility of quantitative elemental analysis by LA-ICP-OES, two real sintered WC/Co samples and two real samples of powdered WC/Co materials were analysed

Sintering of Si C by hot-pressing with addition of Al2O3 and concentrate of rare earths

International Nuclear Information System (INIS)

Hwang, M.K.; Silva, C.R.M.

2004-01-01

Silicon carbide (SiC) has essentially covalent bonds (∼88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

Radiation stable, hybrid, chemical vapor infiltration/preceramic polymer joining of silicon carbide components

Energy Technology Data Exchange (ETDEWEB)

Khalifa, Hesham E., E-mail: hesham.khalifa@ga.com [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States); Koyanagi, Takaaki [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge 37831, TN (United States); Jacobsen, George M.; Deck, Christian P.; Back, Christina A. [General Atomics, 3550 General Atomics Ct., San Diego 92121, CA (United States)

2017-04-15

This paper reports on a nuclear-grade joining material for bonding of silicon carbide-based components. The joint material is fabricated via a hybrid preceramic polymer, chemical vapor infiltration process. The joint is comprised entirely of β-SiC and results in excellent mechanical and permeability performance. The joint strength, composition, and microstructure have been characterized before and after irradiation to 4.5 dpa at 730 °C in the High Flux Isotope Reactor. The hybrid preceramic polymer-chemical vapor infiltrated joint exhibited complete retention of shear strength and no evidence of microstructural evolution or damage was detected following irradiation.

Characterization of Nanometric-Sized Carbides Formed During Tempering of Carbide-Steel Cermets

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Matus K.

2016-06-01

Full Text Available The aim of this article of this paper is to present issues related to characterization of nanometric-sized carbides, nitrides and/or carbonitrides formed during tempering of carbide-steel cermets. Closer examination of those materials is important because of hardness growth of carbide-steel cermet after tempering. The results obtained during research show that the upswing of hardness is significantly higher than for high-speed steels. Another interesting fact is the displacement of secondary hardness effect observed for this material to a higher tempering temperature range. Determined influence of the atmosphere in the sintering process on precipitations formed during tempering of carbide-steel cermets. So far examination of carbidesteel cermet produced by powder injection moulding was carried out mainly in the scanning electron microscope. A proper description of nanosized particles is both important and difficult as achievements of nanoscience and nanotechnology confirm the significant influence of nanocrystalline particles on material properties even if its mass fraction is undetectable by standard methods. The following research studies have been carried out using transmission electron microscopy, mainly selected area electron diffraction and energy dispersive spectroscopy. The obtained results and computer simulations comparison were made.

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

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Sangchoel Kim

2013-10-01

Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

Application of La-ZSM-5 Coated Silicon Carbide Foam Catalyst for Toluene Methylation with Methanol

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Debarpita Ghosal

2015-07-01

Full Text Available The performance of toluene methylation reaction was studied on H-ZSM-5 catalyst modified with La, Ce and Nb at different percentage loading. It was found that 10% metal loading produced the best performance in the reaction in terms of toluene conversion. The catalyst was coated on silicon carbide foam support which showed better conversion than the pelleted catalyst. Again, among the treated and untreated H-ZSM-5, the La-ZSM-5 catalyst is chosen for the reaction for its highest selectivity towards xylene, the main product. All catalysts were characterized in terms of surface properties, SEM, XRD and NH3-TPD. Kinetic study was done on La-ZSM-5 catalyst with 10% loading. In this kineticstudy, Langmuir Hinshelwood kinetic model with surface reaction as rate controlling step was selected as the rate equation. The activation energy was found to be 47 kJ/mol. © 2015 BCREC UNDIP. All rights reserved. Received: 9th December 2014; Revised: 27th April 2015; Accepted: 29th April 2015  How to Cite: Ghosal, D., Basu, J.K., Sengupta, S. (2015. Application of La-ZSM-5 Coated Silicon Carbide Foam Catalyst for Toluene Methylation with Methanol. Bulletin of Chemical Reaction Engineering & Catalysis, 10 (2: 201-209. (doi:10.9767/bcrec.10.2.7872.201-209 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.10.2.7872.201-209  

Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

International Nuclear Information System (INIS)

Nozawa, Takashi; Ozawa, Kazumi; Tanigawa, Hiroyasu

2013-01-01

A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria

Re-defining failure envelopes for silicon carbide composites based on damage process analysis by acoustic emission

Energy Technology Data Exchange (ETDEWEB)

Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp; Ozawa, Kazumi; Tanigawa, Hiroyasu

2013-10-15

A silicon carbide fiber reinforced silicon carbide matrix (SiC/SiC) composite is a promising candidate for a fusion DEMO blanket. To develop design codes in practical use of them, strength anisotropy is an important issue to be clarified and therefore this study aimed to evaluate the failure behavior of the SiC/SiC composites to provide a strength map. For this purpose, detailed tensile, compressive and in-plane shear failure behaviors were evaluated by the acoustic emission (AE) technique for a plain–weave (P/W) chemically vapor-infiltration (CVI) SiC/SiC composite. The AE results distinguished damage accumulation processes by separately discussing localized variations of power within a time series by wavelet analysis. Of particular emphasis is that matrix cracking occurred prior to the proportional limit stress (PLS) by both tensile and compressive tests. This is because the rough-surface of SiC fibers resulted in the strong frictional stress at the fiber/matrix (F/M) interface, showing linearity in the stress–strain curve beyond the actual matrix cracking stress (i.e., possibly no sliding of the fibers at the F/M interface). In this paper, an updated failure envelope was provided by referring the true matrix cracking stresses as more realistic and reasonable failure criteria.

Preparation and Fatigue Properties of Functionally Graded Cemented Carbides

International Nuclear Information System (INIS)

Liu Yong; Liu Fengxiao; Liaw, Peter K.; He Yuehui

2008-01-01

Cemented carbides with a functionally graded structure have significantly improved mechanical properties and lifetimes in cutting, drilling and molding. In this work, WC-6 wt.% Co cemented carbides with three-layer graded structure (surface layer rich in WC, mid layer rich in Co and the inner part of the average composition) were prepared by carburizing pre-sintered η-phase-containing cemented carbides. The three-point bending fatigue tests based on the total-life approach were conducted on both WC-6wt%Co functionally graded cemented carbides (FGCC) and conventional WC-6wt%Co cemented carbides. The functionally graded cemented carbide shows a slightly higher fatigue limit (∼100 MPa) than the conventional ones under the present testing conditions. However, the fatigue crack nucleation behavior of FGCC is different from that of the conventional ones. The crack nucleates preferentially along the Co-gradient and perpendicular to the tension surface in FGCC, while parallel to the tension surface in conventional cemented carbides

Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

Science.gov (United States)

Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

2009-12-01

By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

Study of irradiation effects in the silicon carbide cubic polytype by photoluminescence and electron spin resonance spectroscopies

International Nuclear Information System (INIS)

Lefevre, J.

2008-01-01

This experimental work has consisted in the study of point defects induced by an electronic irradiation in the cubic crystallographic structure of silicon carbide with low temperature photoluminescence and electron spin resonance spectroscopies. The first one of these measurement tools has allowed to estimate the displacement threshold energy in the silicon sub-lattice and then to analyze the thermal stability of the irradiation defects in the low temperature range: (10-300 K) and then in the high temperature range: (300-1400 K). Besides, on the base of a recent theoretical model, this thesis has confirmed the proposition of the isolated silicon antisite for the D1 center whose running beyond the nominal running temperature of fission nuclear reactors (generation IV), for which SiC is in part intended, seems to be particularly problematic. Measurements carried out by ESR under lighting have at last allowed to detect a new defect in its metastable spin state S=1, possibly associated to a silicon interstitial configuration. (O.M.)

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic

International Nuclear Information System (INIS)

Reau, A.

2008-01-01

Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC f /SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC f /SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

The valve effect of the carbide interlayer of an electric resistance plug

International Nuclear Information System (INIS)

Lakomskii, V.

1998-01-01

The welded electric resistance plug (ERP) usually contains a carbide interlayer at the plug-carbon material interface. The interlayer forms during welding the contact metallic alloy with the carbon material when the oxide films of the alloy are reduced on the interface surface by carbon to the formation of carbides and the surface layer of the plug material dissolves carbon to saturation. Subsequently, during solidification of the plug material it forms carbides with the alloy components. The structural composition of the carbide interlayer is determined by the chemical composition of the contact alloy. In alloys developed by the author and his colleagues the carbide forming elements are represented in most cases by silicon and titanium and, less frequently, by chromium and manganese. Therefore, the carbide interlayers in the ERP consisted mainly of silicon and titanium carbides

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

International Nuclear Information System (INIS)

Emelchenko, G.A.; Zhokhov, A.A.; Masalov, V.M.; Kudrenko, E.A.; Tereshenko, A.N.; Steinman, E.A.; Khodos, I.I.; Zinenko, V.I.; Agafonov, Yu.A.

2011-01-01

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

Joining of silicon carbide using interlayer with matching coefficient of thermal expansion

International Nuclear Information System (INIS)

Perham, T.

1996-11-01

The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC f /SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite

Diorganosilacetylene-alt-diorganosilvinylene polymers and a process densifying porous silicon-carbide bodies

Science.gov (United States)

Barton, Thomas J.; Ijadi-Maghsoodi, Sina; Pang, Yi

1994-05-17

The present invention provides linear organosilicon polymers including acetylene and vinylene moieties, and a process for their preparation. These diorganosilacetylene-alt-diorganosilvinylene linear polymers can be represented by the formula: --[--(R.sup.1)(R.sup.2)Si--C.tbd.C--(R.sup.3)(R.sup.4)Si--CH=CH--].sub.n-- , wherein n.gtoreq.2; and each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently selected from the group consisting of hydrogen, halogen, alkyl, alkenyl, aryl, and aralkyl radicals. The polymers are soluble in organic solvents, air stable, and can be pulled into fibers or cast into films. They can be thermally converted into silicon carbide ceramic materials.

The influence of processing conditions on the microstructure and the mechanical properties of reaction sintered silicon nitride

International Nuclear Information System (INIS)

Heinrich, J.

1979-09-01

The microstructure of reaction sintered silicon nitride (RBSN) was changed in a wide range of varying green density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behaviour, and resistance to thermal shock has been investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of α- and β-Si 3 N 4 . In view of high temperature engineering applications of RBSN possibilities to optimize the material's properties by controlled processing are discussed. (orig.) [de

Impact strength of sintered astaloy CrM powders

International Nuclear Information System (INIS)

Kazior, J.; Ploszczak, J.; Nykiel, M.; Pieczonka, T.

2003-01-01

In this paper results of a series of impact tests on sintered Astaloy CrM powders alloys modified by boron are presented and discussed. Boron in different forms, i.e. as elemental boron powder, boron carbide B 4 C powder or mixture of boron and carbon elemental powders, was used in different weight percentage to activate sintering of Astaloy CrM powder and to increase hardenability, with aim of increasing impact strength in view of structural applications. (author)

Creating and Controlling Single Spins in Silicon Carbide

Science.gov (United States)

Christle, David

Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.

Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

Directory of Open Access Journals (Sweden)

Oluwagbenga Babajide Fatile

2014-10-01

Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

Improving the back surface field on an amorphous silicon carbide (a-SiC:H) thin film photocathode for solar water splitting

NARCIS (Netherlands)

Perez Rodriguez, P.; Cardenas-Morcoso, Drialys; Digdaya, I.A.; Mangel Raventos, A.; Procel Moya, P.A.; Isabella, O.; Gimenez, Sixto; Zeman, M.; Smith, W.A.; Smets, A.H.M.

2018-01-01

Amorphous silicon carbide (a-SiC:H) is a promising material for photoelectrochemical water splitting owing to its relatively small band-gap energy and high chemical and optoelectrical stability. This work studies the interplay between charge-carrier separation and collection, and their injection

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

Science.gov (United States)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Nanoparticles and nanorods of silicon carbide from the residues of corn

Science.gov (United States)

Qadri, S. B.; Gorzkowski, E.; Rath, B. B.; Feng, J.; Qadri, S. N.; Kim, H.; Caldwell, J. D.; Imam, M. A.

2015-01-01

We have investigated the thermally induced transformation of various residues of the corn plant into nanoparticles and nanorods of different silicon carbide (SiC) polytypes. This has been accomplished by both microwave-induced and conventional furnace pyrolysis in excess of 1450 °C in an inert atmosphere. This simple process of producing nanoparticles of different polytypes of SiC from the corn plant opens a new method of utilizing agricultural waste to produce viable industrial products that are technologically important for nanoelectronics, molecular sensors, nanophotonics, biotechnology, and other mechanical applications. Using x-ray and Raman scattering characterization, we have demonstrated that the processed samples of corn husk, leaves, stalks, and cob consist of SiC nanostructures of the 2H, 3C, 4H, and 6H polytypes.

Tantalum and niobium carbides obtention by carbothermic reduction of columbotantalite ores

International Nuclear Information System (INIS)

Gordo, E.; Garcia-Carcedo, F.; Torralba, J.M.

1998-01-01

Tantalum and niobium carbides are characterized by its high hardness and chemical corrosion resistance. Both carbides, but mainly TaC, are used in hard metals (sintered carbides), together with their carbides, to manufacture cutting tools and dies in special machining applications involving mechanical shock at high temperature. Its use as reinforcement of wear resistant materials through powder metallurgy techniques are being investigated. However, the use of TaC is usually limited because of its high cost. Therefore tantalum carbide with niobium content, which is cheaper, is used. In this work the obtention of complex tantalum and niobium carbides from a Spanish columbotantalite ore is studied through relatively cheap and simple process as it is carbothermic reduction. Concentration of the ore, its reduction and the characterization of products are described. (Author) 11 refs

ELASTO-PLASTIC DEFORMATION OF COMPOSITE POWDERS WITH LAYERED CARBON AND CARBIDE-FORMING ELEMENT COATING

Directory of Open Access Journals (Sweden)

V. N. Kovalevsky

2012-01-01

Full Text Available Coating structure formation under magnetron spraying of titanium and carbon cathodes and combined cathodes, namely cobalt (EP 131 – nickel, tungsten – carbon have been investigated under conditions of carbide separate synthesis within the temperature range of 650–1200 °C. Usage of cobalt and nickel particles as matrix material leads to their rapid thermal expansion under heating during sintering process in the dilatometer. Subsequent plastic deformation of sintered samples provides obtaining a composite powder material that is a composite with framing structure of cobalt, titanium and tungsten carbides in the coatings.

Electronic properties of intrinsic and doped amorphous silicon carbide films

International Nuclear Information System (INIS)

Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

2006-01-01

Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

Electronic properties of epitaxial 6H silicon carbide

International Nuclear Information System (INIS)

Wessels, B.W.; Gatos, H.C.

1977-01-01

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

Silicon carbide transparent chips for compact atomic sensors

Science.gov (United States)

Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

2017-11-01

Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

Development and Characterization of Carbon Nanotubes (CNTs) and Silicon Carbide (SiC) Reinforced Al-based Nanocomposites

Science.gov (United States)

Gujba, Kachalla Abdullahi

Composites are engineered materials developed from constituent materials; matrix and reinforcements, to attain synergistic behavior at the micro and macroscopic level which are different from the individual materials. The high specific strength, low weight, excellent chemical resistance and fatigue endurance makes these composites superior than other materials despite anisotropic behaviors. Metal matrix composites (MMCs) have excellent physical and mechanical properties and alumium (Al) alloy composites have gained considerable interest and are used in multiple industries including: aerospace, structural and automotive. The aim of this research work is to develop an advanced Al-based nanocomposites reinforced with Carbon nanotubes (CNTs) and silicon carbide particulates (SiCp) nanophases using mechanical alloying and advanced consolidation procedure (Non-conventional) i.e. Spark Plasma Sintering (SPS) using two types of aluminum alloys (Al-7Si-0.3mg and Al-12Si-0.3Mg). Different concentrations of SiCp and CNTs were added and ball milled for different milling periods under controlled atmosphere to study the effect of milling time and the distribution of the second phases. Characterization techniques were used to investigate the morphology of the as received monolithic and milled powder using Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive Spectroscopy (EDS), X-Ray Mapping, X-Ray Diffraction (XRD) and Particle Size Analyses (PSA). The results revealed that the addition of high concentrations of SiCp and CNTs in both alloys aided in refining the structure of the resulting powder further as the reinforcement particles acted like a grinding agent. Good distribution of reinforcing particles was observed from SEM and no compositional fluctuations were observed from the EDS. Some degree of agglomerations was observed despite the ethyl alcohol sonication effect of the CNTs before ball milling. From the XRD; continuous reduction in crystallite size and

Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

Energy Technology Data Exchange (ETDEWEB)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, District of Columbia 20375 (United States)

2015-09-14

Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.

Joining silicon carbide to austenitic stainless steel through diffusion welding; Stellingen behorende bij het proefschrift

Energy Technology Data Exchange (ETDEWEB)

Krugers, Jan-Paul

1993-01-19

In this thesis, the results are presented of a study dealing with joining silicon carbide to austenitic stainless steel AIS316 by means of diffusion welding. Welding experiments were carried out without and with the use of a metallic intermediate, like copper, nickel and copper-nickel alloys at various conditions of process temperature, process time, mechanical pressure and interlayer thickness. Most experiments were carried out in high vacuum. For reasons of comparison, however, some experiments were also carried out in a gas shielded environment of 95 vol.% Ar and 5 vol.% H₂.

Fracture properties of hydrogenated amorphous silicon carbide thin films

International Nuclear Information System (INIS)

Matsuda, Y.; King, S.W.; Bielefeld, J.; Xu, J.; Dauskardt, R.H.

2012-01-01

The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si ≈ 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic–inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si ≈ 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (∼9.5 J m −2 ) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films.

Atomistic simulation of rapid compression of fractured silicon carbide

International Nuclear Information System (INIS)

Romano, A.; Li, J.; Yip, S.

2006-01-01

Deformation mechanisms of a crack in silicon carbide under high-rate compression are investigated by molecular dynamics simulation. The penny-shaped crack is in tension throughout the simulation while a variable compression is applied in an in-plane direction. Two different mechanisms of crack-tip response are observed: (1) At low tension, a disordered band forms from the crack surface in the direction orthogonal to the compression, which grows as the compressional force is increased in a manner suggesting a stress-induced transition from an ordered to a disordered phase. Moreover the crack is observed to close. (2) At a tension sufficient to allow the crack to remain open, the compressional stress induces formation of disordered regions along the boundaries of the opened crack, which grow and merge into a band as the compression proceeds. This process is driven by bending of the initial crack, which transforms into a curved slit. This mechanism induces incorporation of fragments of perfect crystal into the disordered band. Similar mechanisms have been experimentally observed to occur in porous SiC under high-strain rate compression

Silicon carbide composites as fusion power reactor structural materials

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

2011-10-01

Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

Thermodynamic calculations for chemical vapor deposition of silicon carbide

International Nuclear Information System (INIS)

Minato, Kazuo; Fukuda, Kousaku; Ikawa, Katsuichi

1985-03-01

The composition of vapor and condensed phases at equilibrium and CVD phase diagrams were calculated for the CH 3 SiCl 3 -H 2 -Ar system using a computer code SOLGASMIX-PV, which is based on the free energy minimization method. These calculations showed that β-SiC, β-SiC+C(s), β-SiC+Si(s), β-SiC+Si(l), Si(s), Si(l), or C(s) would be deposited depending on deposition parameters. In the CH 3 SiCl 3 -Ar system, condensed phase was found to be β-SiC+C(s) or C(s). Comparing the calculated CVD phase diagrams with the experimental results from the literature, β-SiC+C(s) and β-SiC+Si(s) were deposited in the experiments at the high temperature (more than 2000K) and low temperature (less than 1700K) parts of a resion, respectively, where only β-SiC would be deposited in the calculations. These are remakable results to consider the deposition mechanism of silicon carbide. (author)

Synthesis of silicon carbide by carbothermal reduction of silica

International Nuclear Information System (INIS)

Abel, Joao Luis

2009-01-01

The production of silicon carbide (SiC) in an industrial scale still by carbothermal reduction of silica. This study aims to identify, in a comparative way, among the common reducers like petroleum coke, carbon black, charcoal and graphite the carbothermal reduction of silica from the peat. It is shown, that the peat, also occurs in nature together with high purity silica sand deposits, where the proximity of raw materials and their quality are key elements that determine the type, purity and cost of production of SiC. Tests were running from samples produced in the electric resistance furnace with controlled atmosphere at temperatures of 1550 degree C, 1600 degree C and 1650 degree C, both the precursors and products of reaction of carbothermal reduction were characterized by applying techniques of X-ray diffraction, scanning electron microscopy (SEM) and Energy-Dispersive X-ray analysis Spectroscopy (EDS). The results showed the formation of SiC for all common reducers, as well as for peat, but it was not possible to realize clearly the difference between them, being necessary, specific tests. (author)

Ternary carbide uranium fuels for advanced reactor design applications

International Nuclear Information System (INIS)

Knight, Travis; Anghaie, Samim

1999-01-01

Solid-solution mixed uranium/refractory metal carbides such as the pseudo-ternary carbide, (U, Zr, Nb)C, hold significant promise for advanced reactor design applications because of their high thermal conductivity and high melting point (typically greater than 3200 K). Additionally, because of their thermochemical stability in a hot-hydrogen environment, pseudo-ternary carbides have been investigated for potential space nuclear power and propulsion applications. However, their stability with regard to sodium and improved resistance to attack by water over uranium carbide portends their usefulness as a fuel for advanced terrestrial reactors. An investigation into processing techniques was conducted in order to produce a series of (U, Zr, Nb)C samples for characterization and testing. Samples with densities ranging from 91% to 95% of theoretical density were produced by cold pressing and sintering the mixed constituent carbides at temperatures as high as 2650 K. (author)

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Estimate of toxically influence of silicon carbide nanoparticles according histopatologycal changes

Directory of Open Access Journals (Sweden)

Grozdanov Anita

2013-07-01

Full Text Available Taking in consideration a very wide application of nanoparticules in different industrial sectors due to their remarkable properties for implementation in different products, very important part for future development of nanotechology is following a histopatologycal changes provoke of this material.Silicon carbide (SiC as ceramic material with high thermal conductivity, high stability, good wear resistance and small thermal expansion coefficient is very applied in ceramic’s industry, power electronics, biomaterials, pharmaceutics etc. Histopathological changes of SiC particles were investigate on 4 weeks old female Wistar rats divided into four groups (two control and two experimental groups, sacrificed 2, 7 and 14 days after treatment. Histopathological diagnosis was performed on heart, liver, spleen, kidneys, lung, brain, gastrointestinal tract, using standard Hematoxilin-eosin staining methods. The main toxicological influences of SiC were observed on liver, lungs and gastrointestinal tract.

Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

Energy Technology Data Exchange (ETDEWEB)

Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

1993-03-01

One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

2014-01-01

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

International Nuclear Information System (INIS)

Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

2004-01-01

We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

Silicon nanowires nanogenerator based on the piezoelectricity of alpha-quartz.

Science.gov (United States)

Yin, Kui; Lin, Haiyang; Cai, Qian; Zhao, Yi; Lee, Shuit-Tong; Hu, Fei; Shao, Mingwang

2013-12-21

Silicon nanowires are important semiconductor with core/shell structure. In this work, the piezoelectric material alpha-quartz was grown in the interface of silicon nanowires by thermal treatment at 600 °C for 0.5 h. These nanowires were employed as starting materials to fabricate piezoelectric nanogenerators, which could convert kinetic energy into electrical one, exhibiting an output voltage of 36.5 V and a response current of 1.4 μA under a free-falling object of 300 g at a height of 30 cm.

Contribution to the study of the sintering of ex-carbonyl iron in the {alpha} and {gamma} phases using the micro-fractographic technique; Contribution a l'etude du frittage du fer ex-carbonyle en phases {alpha} et {gamma} par examen des surfaces de rupture au microscope electronique

Energy Technology Data Exchange (ETDEWEB)

Oxley Gaborit de Montjou, M.Th. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1966-07-01

The micro-fractographic study of the sintering of ex-carbonyl iron has shown or confirmed a number of phenomena of which the principal are as followed: Sintering in the a phase: -) existence of two stages of sintering differentiated by the type of rupture (inter or trans-crystalline); -) marked influence of the content of oxygen in the atmosphere and in the initial compressed sample on the speed of sintering; -) formation of striations on the grain-boundary surfaces and on the inner surface of pores caused by the presence of oxygen. Sintering in the {gamma} phase: -) a pronounced decrease in the speed of sintering: the grains in the initial powder remain in the granular state within the final {alpha} crystal in the iron sintered in the lower {gamma} range even after several hours of sintering; -) this granular structure can be eliminated by intermediate compression thus enabling the sintering process to proceed. A considerable decrease in the speed of sintering if the A{sub 3} point is passed one or more times in the {alpha} range sintering. A high speed sintering if the treatment in the {gamma} range is carried out at or above 1300 C. The results of this study agree with micrographic investigation as well as with dilatometric measurements and known auto-diffusion coefficients. (author) [French] L'etude microfractographique du frittage du fer ex-carbonyle a permis de mettre en evidence ou verifier plusieurs phenomenes dont les principaux sont les suivants: Pour le frittoge en phase {alpha}: -) existence de deux stades de frittage differencies par le type de rupture (inter et transcristalline); -) importance de la teneur en oxygene dans l'atmosphere et dans le comprime initial sur la vitesse de frittage; -) formation de stries dues a la presence d'oxygene sur les plans de joints et a l'interieur des pores. Pour le frittage en phase {gamma}: -) un ralentissement tres prononce de la cinetique du frittage: les granules de la poudre initiale demeurent a l'etat de

A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

Energy Technology Data Exchange (ETDEWEB)

Valentín, L. A.; Betancourt, J.; Fonseca, L. F., E-mail: luis.fonseca@upr.edu [Department of Physics University of Puerto Rico, Rio Piedras (Puerto Rico); Pettes, M. T.; Shi, L. [Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States); Soszyński, M.; Huczko, A. [Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)

2013-11-14

The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

Science.gov (United States)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Surface metallurgy of cemented carbide tools

International Nuclear Information System (INIS)

Chopra, K.L.; Kashyap, S.C.; Rao, T.V.; Rajagopalan, S.; Srivastava, P.K.

1983-01-01

Transition metal carbides, owing to their high melting point, hardness and wear resistance, are potential candidates for specific application in rockets, nuclear engineering equipment and cutting tools. Tungsten carbide sintered with a binder (either cobalt metal or a mixture of Co + TiC and/or TaC(NbC)) is used for cutting tools. The surface metallurgy of several commercially available cemented carbide tools was studied by Auger electron spectroscopy and X-ray photoelectron spectroscopy techniques. The tool surfaces were contaminated by adsorbed oxygen up to a depth of nearly 0.3 μm causing deterioration of the mechanical properties of the tools. Studies of fractured samples indicated that the tool surfaces were prone to oxygen adsorption. The fracture path passes through the cobalt-rich regions. The ineffectiveness of a worn cutting tool is attributed to the presence of excessive iron from the steel workpiece and carbon and oxygen in the surface layers of the tool. The use of appropriate hard coatings on cemented carbide tools is suggested. (Auth.)

Development of Gradient Cemented Carbides Through ICME Strategy

Science.gov (United States)

Du, Yong; Peng, Yingbiao; Zhang, Weibin; Chen, Weimin; Zhou, Peng; Xie, Wen; Cheng, Kaiming; Zhang, Lijun; Wen, Guanghua; Wang, Shequan

An integrated computational materials engineering (ICME) including CALPHAD method is a powerful tool for materials process optimization and alloy design. The quality of CALPHAD-type calculations is strongly dependent on the quality of the thermodynamic and diffusivity databases. The development of a thermodynamic database, CSUTDCC1, and a diffusivity database, CSUDDCC1, for cemented carbides is described. Several gradient cemented carbides sintered under vacuum and various partial pressures of N2 have been studied via experiment and simulation. The microstructure and concentration profile of the gradient zones have been investigated via SEM and EPMA. Examples of ICME applications in design and manufacture for different kinds of cemented carbides are shown using the databases and comparing where possible against experimental data, thereby validating its accuracy.

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Energy Technology Data Exchange (ETDEWEB)

Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Tuttle, Blair R. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

2015-06-15

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

Bulletin of Materials Science | News

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 25; Issue 3 ... Sintering of nano crystalline silicon carbide by doping with boron carbide ... of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. ... pp 213-217 Alloys and Steels.

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

Science.gov (United States)

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a...Shukla, K., “Thermo-fluid dynamics of Loop Heat Pipe Operation,” International Communications in Heat and Mass Transfer , Vol. 35, No. 8, 2008, pp

Pulverization of boron element and proportions of boron carbide in boron

International Nuclear Information System (INIS)

Lang, F.M.; Finck, C.

1956-01-01

It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

Vaporization thermodynamics and enthalpy of formation of aluminum silicon carbide

International Nuclear Information System (INIS)

Behrens, R.G.; Rinehart, G.H.

1984-01-01

The vaporization thermodynamics of aluminum silicon carbide was investigated using Knudsen effusion mass spectrometry. Vaporization occurred incongruently to give Al(g), SiC(s), and graphite as reaction products. The vapor pressure of aluminum above (Al 4 SiC 4 + SiC + C) was measured using graphite effusion cells with orifice areas between 1.1 X 10 -2 and 3.9 X 10 -4 cm 2 . The vapor pressure of aluminum obtained between 1427 and 1784 K using an effusion cell with the smallest orifice area, 3.9 X 10 -4 cm 2 , is expressed as log p (Pa) = - (18567 + or - 86) (K/T) + (12.143 + or - 0.054) The third-law calculation of the enthalpy change for the reaction Al 4 SiC 4 (s) = 4Al(g) + SiC(hex) + 3C(s) using the present aluminum pressures gives ΔH 0 (298.15 K) = (1455 + or - 79) kJ /SUP ./ mol -1 . The corresponding second-law result is ΔH 0 (298.15 K) = (1456 + or - 47) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from the elements calculated from the present vaporization enthalpy (third-law calculation) and the enthalpies of formation of Al(g) and hexagonal SiC is ΔH 0 /SUB f/ (298.15 K) = -(221 + or - 85) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from its constituent carbides Al 4 C 3 (s) and SiC(c, hex) is calculated to be ΔH 0 (298.15 K) = (38 + or - 92) KJ /SUP ./ mol -1

The effect of carbon mole ratio on the fabrication of silicon carbide

Directory of Open Access Journals (Sweden)

Sutham Niyomwas

2008-03-01

Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

Processes and applications of silicon carbide nanocomposite fibers

International Nuclear Information System (INIS)

Shin, D G; Cho, K Y; Riu, D H; Jin, E J

2011-01-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al 2 O 3 . Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Processes and applications of silicon carbide nanocomposite fibers

Energy Technology Data Exchange (ETDEWEB)

Shin, D G; Cho, K Y; Riu, D H [Nanomaterials Team, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Guemcheon-gu, Seoul 153-801 (Korea, Republic of); Jin, E J, E-mail: dhriu15@seoultech.ac.kr [Battelle-Korea Laborotary, Korea University, Anamdong, Seongbuk-gu, Seoul (Korea, Republic of)

2011-10-29

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and {gamma}-Al{sub 2}O{sub 3}. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Processes and applications of silicon carbide nanocomposite fibers

Science.gov (United States)

Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

2011-10-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Quantum Chemistry, and Eclectic Mix: From Silicon Carbide to Size Consistency

Energy Technology Data Exchange (ETDEWEB)

Rintelman, Jamie Marie [Iowa State Univ., Ames, IA (United States)

2004-12-19

Chemistry is a field of great breadth and variety. It is this diversity that makes for both an interesting and challenging field. My interests have spanned three major areas of theoretical chemistry: applications, method development, and method evaluation. The topics presented in this thesis are as follows: (1) a multi-reference study of the geometries and relative energies of four atom silicon carbide clusters in the gas phase; (2) the reaction of acetylene on the Si(100)-(2x1) surface; (3) an improvement to the Effective Fragment Potential (EFP) solvent model to enable the study of reactions in both aqueous and nonaqueous solution; and (4) an evaluation of the size consistency of Multireference Perturbation Theory (MRPT). In the following section, the author briefly discusses two topics central to, and present throughout, this thesis: Multi-reference methods and Quantum Mechanics/Molecular Mechanics (QM/MM) methods.

EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

Science.gov (United States)

Karray, Fekri; Kassiba, Abdelhadi

2012-06-01

Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

Energy Technology Data Exchange (ETDEWEB)

Karray, Fekri [Laboratoire des materiaux Ceramiques Composites et Polymeres, Faculte des Sciences de Sfax, BP 802, 3018 Sfax (Tunisia); Kassiba, Abdelhadi, E-mail: kassiba@univ-lemans.fr [Institute of Molecules and Materials of Le Mans (I3M), UMR-CNRS 6283, Universite du Maine, 72085 Le Mans (France)

2012-06-15

Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

Reactive Sintering of Bimodal WC-Co Hardmetals

Directory of Open Access Journals (Sweden)

Marek Tarraste

2015-09-01

Full Text Available Bimodal WC-Co hardmetals were produced using novel technology - reactive sintering. Milled and activated tungsten and graphite powders were mixed with commercial coarse grained WC-Co powder and then sintered. The microstructure of produced materials was free of defects and consisted of evenly distributed coarse and fine tungsten carbide grains in cobalt binder. The microstructure, hardness and fracture toughness of reactive sintered bimodal WC-Co hardmetals is exhibited. Developed bimodal hardmetal has perspective for demanding wear applications for its increased combined hardness and toughness. Compared to coarse material there is only slight decrease in fracture toughness (K1c is 14.7 for coarse grained and 14.4 for bimodal, hardness is increased from 1290 to 1350 HV units.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7511

Graphite and boron carbide composites made by hot-pressing

International Nuclear Information System (INIS)

Miyazaki, K.; Hagio, T.; Kobayashi, K.

1981-01-01

Composites consisting of graphite and boron carbide were made by hot-pressing mixed powders of coke carbon and boron carbide. The change of relative density, mechanical strength and electrical resistivity of the composites and the X-ray parameters of coke carbon were investigated with increase of boron carbide content and hot-pressing temperature. From these experiments, it was found that boron carbide powder has a remarkable effect on sintering and graphitization of coke carbon powder above the hot-pressing temperature of 2000 0 C. At 2200 0 C, electrical resistivity of the composite and d(002) spacing of coke carbon once showed minimum values at about 5 to 10 wt% boron carbide and then increased. The strength of the composite increased with increase of boron carbide content. It was considered that some boron from boron carbide began to diffuse substitutionally into the graphite structure above 2000 0 C and densification and graphitization were promoted with the diffusion of boron. Improvements could be made to the mechanical strength, density, oxidation resistance and manufacturing methods by comparing with the properties and processes of conventional graphites. (author)

Sintering behavior and mechanical properties of a metal injection molded Ti–Nb binary alloy as biomaterial

International Nuclear Information System (INIS)

Zhao, Dapeng; Chang, Keke; Ebel, Thomas; Nie, Hemin; Willumeit, Regine; Pyczak, Florian

2015-01-01

Highlights: • The sintering of the MIM Ti–Nb alloy consists of three steps. • The Nb particles act as diffusion barriers during sintering. • The TiC x only precipitate in the cooling step during sintering. • The TiC x hardly influence the sintering process of MIM Ti–Nb alloy. • The MIM Ti–Nb alloy exhibits high strength, low Young’s modulus but poor ductility. - Abstract: Sintering behavior, microstructure and mechanical properties of a Ti–16Nb alloy processed by metal injection molding (MIM) technology using elemental powders were investigated in this work by optical microscopy, X-ray diffraction (XRD), dilatometer, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). It was found that from 700 °C to 1500 °C the homogenization and densification process of MIM Ti–16Nb alloy consisted of three steps, i.e., Ti-diffusion-controlled step, Ti–Nb-diffusion step and matrix-diffusion step. Titanium carbide formation was observed in the samples sintered at 1300 °C and 1500 °C, but not in the ones sintered at 900 °C and 1100 °C. The MIM Ti–16Nb specimens sintered at 1500 °C exhibited a good combination of high tensile strength and low Young’s modulus. However, the titanium carbide particles led to poor ductility

A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries.

Science.gov (United States)

Chen, Bing-Hong; Chuang, Shang-I; Liu, Wei-Ren; Duh, Jenq-Gong

2015-12-30

In this study, a jumbo silicon/silicon carbide (Si/SiC) composite (JSC), a novel anode material source, was extracted from solar power industry cutting waste and used as a material for lithium-ion batteries (LIBs), instead of manufacturing the nanolized-Si. Unlike previous methods used for preventing volume expansion and solid electrolyte interphase (SEI), the approach proposed here simply entails applying surface modification to JSC-based electrodes by using nitrogen-atmospheric pressure plasma jet (N-APPJ) treatment process. Surface organic bonds were rearranged and N-doped compounds were formed on the electrodes through applying different plasma treatment durations, and the qualitative examinations of before/after plasma treatment were identified by X-ray photoelectron spectroscopy (XPS) and electron probe microanalyzer (EPMA). The surface modification resulted in the enhancement of electrochemical performance with stable capacity retention and high Coulombic efficiency. In addition, depth profile and scanning electron microscope (SEM) images were executed to determine the existence of Li-N matrix and how the nitrogen compounds change the surface conditions of the electrodes. The N-APPJ-induced rapid surface modification is a major breakthrough for processing recycled waste that can serve as anode materials for next-generation high-performance LIBs.

Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

Science.gov (United States)

Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

2018-03-01

A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

DEFF Research Database (Denmark)

Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

Evaluation of CVD silicon carbide for synchrotron radiation mirrors

International Nuclear Information System (INIS)

Takacs, P.Z.

1981-07-01

Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods

Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

International Nuclear Information System (INIS)

Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

2015-01-01

Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H deposition. • μc-SiC:H/μc-SiO x :H/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H provides a high transparency and electrical conductivity.