4-(Prop-2-yn-1-yloxybenzene-1,2-dicarbonitrile

Directory of Open Access Journals (Sweden)

Yee Jan Chin

2012-07-01

Full Text Available In the title compound, C11H6N2O, the complete molecule is generated by the application of crystallographic twofold symmetry (the molecule is disordered about this axis. The prop-2-yn-1-yl residue is slightly twisted out of the plane of the benzene ring [C—O—C—C torsion angle = 173.1 (3°] and is orientated away from the nitrile substituents. In the crystal, supramolecular chains along the a axis, arising from C—H...N interactions, are connected into stacks along the c axis by π–π interactions between the benzene rings [centroid–centroid distance = 3.6978 (6 Å = length of the c axis].

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

Multiple effects of pentyl-4-yn-VPA enantiomers: from toxicity to short-term memory enhancement

DEFF Research Database (Denmark)

Gotfryd, Kamil; Owczarek, Sylwia; Hoffmann, Katrin

2006-01-01

and migration, neuronal differentiation and survival, intracellular signal transduction, synaptic plasticity and maturation, and short-term memory as determined by the social recognition test. The results show that the enantiomers of PE-4-yn-VPA largely had similar effects in vitro. However, in all in vitro......-differentiating properties. Moreover, the less teratogenic enantiomer, R-PE-4-yn-VPA, was recently shown to improve learning and memory. We here present a detailed investigation of the enantioselective properties of PE-4-yn-VPA using a range of in vitro and in vivo assays including measurements of cellular growth...... experiments the more teratogenic enantiomer, S-PE-4-yn-VPA, exhibited a stronger potency than R-PE-4-yn-VPA, and only S-PE-4-yn-VPA had a detrimental effect on cell survival. Interestingly, both the R- and S-enantiomer improved learning and memory. In contrast, the beneficial effect of S-PE-4-yn-VPA on memory...

Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

International Nuclear Information System (INIS)

Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

KAUST Repository

Shen, Youde

2014-08-13

Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.

The Chemistry of Alk-1-yn-1-yl DisulfidesA Review

DEFF Research Database (Denmark)

Senning, Alexander Erich Eugen

2009-01-01

The preparation and the properties of the elusive alk-1-yn-1-yl disulfides are reviewed, including the most recent quantum chemical findings with regard to their reactivity.......The preparation and the properties of the elusive alk-1-yn-1-yl disulfides are reviewed, including the most recent quantum chemical findings with regard to their reactivity....

Polarized Raman scattering study of PSN single crystals and epitaxial thin films

Directory of Open Access Journals (Sweden)

J. Pokorný

2015-06-01

Full Text Available This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc0.5Nb0.5O3 (PSN single crystals and epitaxially compressed thin films grown on (100-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.

Epitaxial growth of CZT(S,Se) on silicon

Science.gov (United States)

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

KAUST Repository

Janjua, Bilal

2017-03-03

The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.

Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

Directory of Open Access Journals (Sweden)

Mauguin O.

2012-11-01

Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

International Nuclear Information System (INIS)

Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

2007-01-01

In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

Extraordinary epitaxial alignment of graphene islands on Au(111)

International Nuclear Information System (INIS)

Wofford, Joseph M; Dubon, Oscar D; Starodub, Elena; Nie Shu; Bartelt, Norman C; Thürmer, Konrad; McCarty, Kevin F; Walter, Andrew L; Bostwick, Aaron; Rotenberg, Eli

2012-01-01

Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30° rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films. (paper)

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Directory of Open Access Journals (Sweden)

Kazuo Uchida

2012-12-01

Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Directory of Open Access Journals (Sweden)

Huaping Wu

2016-01-01

Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Orientation-dependent structural and photocatalytic properties of LaCoO3 epitaxial nano-thin films

Science.gov (United States)

Zhang, Yan-ping; Liu, Hai-feng; Hu, Hai-long; Xie, Rui-shi; Ma, Guo-hua; Huo, Ji-chuan; Wang, Hai-bin

2018-02-01

LaCoO3 epitaxial films were grown on (100), (110) and (111) oriented LaAlO3 substrates by the polymer-assisted deposition method. Crystal structure measurement and cross-section observation indicate that all the LaCoO3 films are epitaxially grown in accordance with the orientation of LaAlO3 substrates, with biaxial compressive strain in the ab plane. Owing to the different strain directions of CoO6 octahedron, the mean Co-O bond length increases by different amounts in (100), (110) and (111) oriented films compared with that of bulk LaCoO3, and the (100) oriented LaCoO3 has the largest increase. Photocatalytic degradation of methyl orange indicates that the order of photocatalytic activity of the three oriented films is (100) > (111) > (110). Combined with analysis of electronic nature and band structure for LaCoO3 films, it is found that the change of the photocatalytic activity is closely related to the crystal field splitting energy of Co3+ and Co-O binding energy. The increase in the mean Co-O bond length will decrease the crystal field splitting energy of Co3+ and Co-O binding energy and further reduce the value of band gap energy, thus improving the photocatalytic activity. This may also provide a clue for expanding the visible-light-induced photocatalytic application of LaCoO3.

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jenichen, B.; Herfort, J.; Jahn, U.; Trampert, A.; Riechert, H.

2014-01-01

We demonstrate Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe 3 Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe 3 Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe 3 Si film were found. The low substrate temperature T s of 150 °C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T s (225 °C) leads to a largely [111] oriented upper Fe 3 Si layer and polycrystal films. The high T s of 325 °C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. - Highlights: • Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures are grown by MBE. • The bottom Fe 3 Si film is always single crystalline. • The properties of the Ge film depend on the substrate temperature during deposition. • Optimum growth conditions lead to almost perfect epitaxy of Ge on Fe 3 Si

Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

International Nuclear Information System (INIS)

Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

2010-01-01

We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Y. H. Lin

2015-10-01

Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

2016-01-15

The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

Energy Technology Data Exchange (ETDEWEB)

Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2016-04-07

Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.

''Cube-on-hexagon'' orientation relationship for Fe on GaN(0001): The missing link in bcc/hcp epitaxy

International Nuclear Information System (INIS)

Gao Cunxu; Brandt, Oliver; Laehnemann, Jonas; Jahn, Uwe; Jenichen, Bernd; Schoenherr, Hans-Peter; Erwin, Steven C.

2010-01-01

We investigate, experimentally and theoretically, the epitaxy of body-centered-cubic Fe on hexagonal GaN. For growth on the Ga-polar GaN(0001) surface we find the well-known Pitsch-Schrader orientation relationship between Fe and GaN. On the N-polar GaN(0001) surface we observe coexistence between the familiar Burgers orientation and a new orientation in which the Fe(001) plane is parallel to GaN(0001). This 'cube-on-hexagon' orientation constitutes the high-symmetry link required for constructing a symmetry diagram for bcc/hcp systems in which all orientation relationships are connected by simple rotations.

Epitaxially Grown Films of Standing and Lying Pentacene Molecules on Cu(110) Surfaces

Science.gov (United States)

2011-01-01

Here, it is shown that pentacene thin films (30 nm) with distinctively different crystallographic structures and molecular orientations can be grown under essentially identical growth conditions in UHV on clean Cu(110) surfaces. By X-ray diffraction, we show that the epitaxially oriented pentacene films crystallize either in the “thin film” phase with standing molecules or in the “single crystal” structure with molecules lying with their long axes parallel to the substrate. The morphology of the samples observed by atomic force microscopy shows an epitaxial alignment of pentacene crystallites, which corroborates the molecular orientation observed by X-ray diffraction pole figures. Low energy electron diffraction measurements reveal that these dissimilar growth behaviors are induced by subtle differences in the monolayer structures formed by slightly different preparation procedures. PMID:21479111

Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nishiyama, Tsutomu; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

2010-01-01

Fe x Co 100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe x Co 100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe x Co 100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe 50 Co 50 /MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

Single-domain epitaxial silicene on diboride thin films

Energy Technology Data Exchange (ETDEWEB)

Fleurence, A., E-mail: antoine@jaist.ac.jp; Friedlein, R.; Aoyagi, K.; Yamada-Takamura, Y. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Gill, T. G. [School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Sadowski, J. T. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Copel, M.; Tromp, R. M. [IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Hirjibehedin, C. F. [London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH (United Kingdom); Department of Chemistry, UCL, London WC1H 0AJ (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom)

2016-04-11

Epitaxial silicene, which forms spontaneously on ZrB{sub 2}(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. The realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

UV detectors based on epitaxial diamond films grown on single-crystal diamond substrates by vapor-phase synthesis

International Nuclear Information System (INIS)

Sharonov, G.V.; Petrov, S.A.; Bol'shakov, A.P.; Ral'chenko, V.G.; Kazyuchits, N.M.

2010-01-01

The prospects for use of CVD-technology for epitaxial growth of single-crystal diamond films of instrumental quality in UHF plasma for the production of optoelectronic devices are discussed. A technology for processing diamond single crystals that provides a perfect surface crystal structure with roughness less than 0,5 nm was developed. It was demonstrated that selective UV detectors based on synthetic single-crystal diamond substrates coated with single-crystal films can be produced. A criterion for selecting clean and structurally perfect single crystals of synthetic diamond was developed for the epitaxial growth technology. (authors)

Epitaxial (100)-oriented Mo/V superlattice grown on MgO(100) by dcMS and HiPIMS

International Nuclear Information System (INIS)

Shayestehaminzadeh, S.; Magnusson, R.L.; Gislason, H.P.; Olafsson, S.

2013-01-01

Epitaxial (100)-oriented Mo/V superlattices have been grown by High Power Impulse Magnetron Sputtering (HiPIMS) and dc Magnetron Sputtering (dcMS) on single-crystalline MgO(100) substrates at growth temperatures ranging from 30 °C to 600 °C. Superlattice bilayer period of Mo/V around 12/12 monolayers and 15 repeat periods was studied. This study aims to investigate the effect of the HiPIMS process on reducing the growth temperature of Mo/V superlattices using the high energy ionized Mo, V species in the HiPIMS plasma. In one case, the Mo layer was only grown with the HiPIMS process and V layer grown using the dcMS process while in another both layers were grown with the HiPIMS process. The as-deposited films were characterized by X-ray reflection and diffraction techniques. The dcMS process was found to give superior superlattice growth at high growth temperatures while a mixed Mo HiPIMS and V dcMS process gives better result at lower growth temperatures (300 °C). Room temperature growth reveals that neither the mixed Mo HiPIMS and V dcMS process nor the pure HiPIMS for both materials can produce better result compared to the pure dcMS process, which gives a relatively better result. - Highlights: • Epitaxial (100)-oriented Mo/V superlattices have been grown by HiPIMS and dcMS on MgO(100) for various temperatures. • The study was aimed to investigate the effect of ionized HiPIMS process onlowering the growth temperature. • The dcMS process was found to give superior superlattice growth at high growth temperature. • The mixed Mo HiPIMS and V dcMS process gives best result at lower growth temperatures

Raman measurements of epitaxial YBa2Cu3O7-δ films

International Nuclear Information System (INIS)

Burns, G.; Dacol, F.H.; Gield, C.A.; Gupta, A.; Holtzberg, F.; Koren, G.; Laibowitz, R.; McGuire, T.R.; Segmuller, A.P.; Worthington, T.K.

1990-01-01

The authors report Raman measurements on good (high J c ) epitaxial YBa 2 Cu 3 O -δ (Y123) films (δ ∼ 0). The results are compared to those from oriented Y123 single crystals. The comparisons are made for superconducting δ ∼ 0 and semiconducting δ ∼ 1 materials

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

2010-01-01

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose

2010-06-22

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

International Nuclear Information System (INIS)

Ambrosch, K.-E.

1985-01-01

Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011)B3 single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Higuchi, Jumpei; Yabuhara, Osamu; Kirino, Fumiyoshi; Futamoto, Masaaki

2011-01-01

Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011) B3 single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar] bcc || GaAs(011)[011-bar] B3 . The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{011} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011) B3 substrates.

Epitaxial hexagonal materials on IBAD-textured substrates

Science.gov (United States)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

2013-12-16

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

International Nuclear Information System (INIS)

Lahourcade, L.

2009-10-01

This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

FY 1997 report on the study on lamination control technology for functional multi-element oxide thin films by complex beam epitaxy (CxBE) process; 1997 nendo chosa hokokusho (sakutaisen epitaxy (CxBE) ho ni yoru kinosei tagenso sankabutsu usumaku no sekiso seigyo gijutsu ni kansuru kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Complex beam epitaxy (CxBE) process was proposed and demonstrated as new deposition process of multi-element oxide thin films. This process radiates excimer laser onto a metal complex target of ethylenediamine-tetraacetate complex under reduced pressure oxygen atmosphere condition in a reaction vessel to supply raw material onto a heated substrate. This process allowed deposition of YBCO123 phase hetero-epitaxial film onto a single-crystalline SrTiO3 substrate. This process was proved to be promising through study on crystal orientation, composition transcription and surface smoothness of the obtained oxide thin films. In addition, epitaxial ZnO film was also deposited onto a single crystalline Al2O3 substrate by this process. The relation between the obtained film and substrate epitaxy was examined, and photoluminescence of specimens was measured by triple wave of Nd:YAG laser. As a result, it was clarified that the epitaxial ZnO film prepared by this process is useful as laser material. 60 refs., 48 figs., 5 tabs.

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

International Nuclear Information System (INIS)

Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

2004-01-01

Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

International Nuclear Information System (INIS)

Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Posadas, Agham B.; Demkov, Alexander A.; Hu, Chengqing; Yu, Edward T.; Bruley, John

2014-01-01

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure

Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

International Nuclear Information System (INIS)

Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

2013-01-01

Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

Epitaxial growth of bcc-Fe{sub x}Co{sub 100-x} thin films on MgO(1 1 0) single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Nishiyama, Tsutomu; Shikada, Kouhei [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

2010-07-15

Fe{sub x}Co{sub 100-x} (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe{sub x}Co{sub 100-x} film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe{sub x}Co{sub 100-x} crystals with very small errors less than +-0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe{sub 50}Co{sub 50}/MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

Crystal structure of 4,4′-bis[3-(piperidin-1-ylprop-1-yn-1-yl]-1,1′-biphenyl

Directory of Open Access Journals (Sweden)

Anqi Walbaum

2017-06-01

Full Text Available The title compound, C28H32N2, (I, is one of a second generation of compounds designed and synthesized based on a very potent and selective α9α10 nicotinic acetylcholine receptor antagonist ZZ161C {1,1′-[[1,1′-biphenyl]-4,4′-diylbis(prop-2-yne-3,1-diyl]bis(3,4-dimethylpyridin-1-ium bromide}, which has shown analgesic effects in a chemotherapy-induced neuropathy animal model. Compound (I was synthesized by the reaction of 4,4′-bis(3-bromoprop-1-yn-1-yl-1,1′-biphenyl with piperidine at room temperature in acetonitrile. The single-crystal used for X-ray analysis was obtained by dissolving (I in a mixture of dichloromethane and methanol, followed by slow evaporation of the solvent. In the crystal of (I, the biphenyl moiety has a twisted conformation, with a dihedral angle of 25.93 (4° between the benzene rings. Both piperidine head groups in (I are in the chair conformation and are oriented so that the N-atom lone pairs of each piperidine group point away from the central biphenyl moiety.

Long-Chain Acetylenic Ketones from the Micronesian Sponge Haliclona sp. Importance of the 1-yn-3-ol Group for Antitumor Activity

Directory of Open Access Journals (Sweden)

Guang-Xiong Zhou

2003-11-01

Full Text Available Abstract: Two new long-chain C33 polyacetylenic compounds, halicynones A and B were isolated from the marine sponge Haliclona sp. along with known analogs. The known compound pellynol A possessing a 1-yn-3-ol terminus, exhibited strong antitumor activity against the human colon tumor cell line HCT-116 (IC50 0.026 μg/mL, however, the corresponding 1-yn-3-one, halicynone A, was inactive, which suggests an important role for the terminal 1-yn-3-ol functional group in mediating cytotoxic activity.

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

Epitaxial hexagonal materials on IBAD-textured substrates

Energy Technology Data Exchange (ETDEWEB)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

International Nuclear Information System (INIS)

Schlom, D.G.; Merritt, B.A.; Madhavan, S.

1997-01-01

The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

KAUST Repository

Shekhah, Osama; Eddaoudi, Mohamed

2013-01-01

Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

Deposition of metal-organic frameworks by liquid-phase epitaxy: The influence of substrate functional group density on film orientation

KAUST Repository

Liu, J.

2012-09-05

The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4\\'-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

Deposition of metal-organic frameworks by liquid-phase epitaxy: The influence of substrate functional group density on film orientation

KAUST Repository

Liu, J.; Shekhah, O.; Stammer, X.; Arslan, H.K.; Liu, B.; Schupbach, B.; Terfort, A.; Woll, C.

2012-01-01

The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4'-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

Science.gov (United States)

Liu, Jinxuan; Shekhah, Osama; Stammer, Xia; Arslan, Hasan K.; Liu, Bo; Schüpbach, Björn; Terfort, Andreas; Wöll, Christof

2012-01-01

The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4’-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction.

Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011){sub B3} single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Higuchi, Jumpei; Yabuhara, Osamu [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

2011-09-30

Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011){sub B3} single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar]{sub bcc} || GaAs(011)[011-bar]{sub B3}. The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{l_brace}011{r_brace} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011){sub B3} substrates.

GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Hsu, C.-H. [Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

2016-08-22

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

DEFF Research Database (Denmark)

Pécz, Béla; Tóth, Lajos; Barna, Árpád

2013-01-01

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

2014-02-24

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

International Nuclear Information System (INIS)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah; Patriarche, Gilles; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Heer, Walt A. de; Berger, Claire

2016-01-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Energy Technology Data Exchange (ETDEWEB)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

2016-03-07

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation

Directory of Open Access Journals (Sweden)

Christof Wöll

2012-09-01

Full Text Available The liquid phase epitaxy (LPE of the metal-organic framework (MOF HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA, 4’-carboxyterphenyl-4-methanethiol (TPMTA and 9-carboxy-10-(mercaptomethyltriptycene (CMMT. The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100 direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111 direction.

Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

2008-07-01

Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

1987-09-01

We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

Synthesis of c-oriented YbBa2Cu3O7-δ films on single and polycrystalline substrates by oxidation of liquid alloys

International Nuclear Information System (INIS)

Luo, J.S.; Merchant, N.; Maroni, V.A.; Gruen, D.M.; Tani, B.S.; Sandhage, K.H.; Craven, C.A.

1991-11-01

Textured superconducting films of YbBa 2 Cu 3 O 7-δ supported on single and polycrystalline substrates were prepared by oxidation of a liquid precursor alloy. The substrates were coated by dipping them into a molten alloy (YbBa 2 Cu 3 , m.p. ∼870 degree C), withdrawing them from the melt, then oxidizing the adhering liquid alloy layer to the corresponding oxide phase, i.e., YbBa 2 Cu 3 O 7-δ . Samples prepared in this way exhibited a superconducting transition at ∼80 K following annealing in pure OP 2 at 500 degree C. With SrTiO 3 (100) and MgO (100) substrates, evidence was seen for the epitaxial growth of YbBa 2 Cu 3 O 7-δ crystals having their c-axis parallel to the [100] direction of the substrate. For polycrystalline MgO, x-ray diffraction and microstructural examination showed that the high-T c crystallites in the films were also oriented with their c-axis perpendicular to the substrate surface, but the a and b axes directions were randomly oriented rather than epitaxial

TEM study of xenon bubbles evolution in Xe-implanted Cu. Bubbles shape, epitaxial orientation and adsorption phenomenon

International Nuclear Information System (INIS)

Guillot, J.; Cartraud, M.; Garem, H.; Templier, C.; Desoyer, J.C.

1987-01-01

TEM is used to perform a study of xenon clusters changes in Xe-implanted Cu. After implantation, xenon is gathered into f.c.c. crystalline precipitates with a lattice parameter value of 0.580 nm. During annealing at 600 0 C large (110) facetted bubbles appear (2r≅35 nm) which contain fluid xenon. When cooling down to 100 K, xenon solidifies on bubbles facets in form of a thin membrane. The epitaxial orientations between solid xenon and copper are the same as adsorbed Xe on Cu(110) [fr

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Preferential orientation relationships in Ca2MnO4 Ruddlesden-Popper thin films

International Nuclear Information System (INIS)

Lacotte, M.; David, A.; Prellier, W.; Rohrer, G. S.; Salvador, P. A.

2015-01-01

A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca 2 MnO 4 Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr 2 TiO 4 substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001] film ∥ [100][001] substrate , or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001] film ∥ [100][010] substrate , or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth

Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

International Nuclear Information System (INIS)

Mishra, Amita; Dutta, Anirban; Samaddar, Sayanti; Gupta, Anjan K.

2013-01-01

We report the wet chemical deposition of single crystalline epitaxial thin films of the colossal magneto-resistive manganite La 0.67 Sr 0.33 MnO 3 on the lattice-matched (001)-face of a La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 substrate. Topographic images of these films taken with a scanning tunneling microscope show atomically flat terraces separated by steps of monatomic height. The resistivity of these films shows an insulator-metal transition at 310 K, nearly coincident with the Curie temperature of 340 K, found from magnetization measurements. The films show a magnetoresistance of 7% at 300 K and 1.2 T. Their saturation magnetization value at low temperatures is consistent with that of the bulk. - Highlights: ► Wet chemical deposition of La 0.67 Sr 0.33 MnO 3 (LSMO) on a lattice-matched substrate. ► Single crystalline epitaxial LSMO films obtained. ► Flat terraces separated by monatomic steps observed by scanning tunneling microscope

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

Science.gov (United States)

Xu, X.; Armitage, R.; Shinkai, Satoko; Sasaki, Katsutaka; Kisielowski, C.; Weber, E. R.

2005-05-01

Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN /HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

Energy Technology Data Exchange (ETDEWEB)

Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2015-12-15

Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(1 1 1)-(7 × 7) surfaces: Influence of short-range order on the substrate

International Nuclear Information System (INIS)

Roy, Anupam; Bhattacharjee, K.; Ghatak, J.; Dev, B.N.

2012-01-01

Clean Si(1 1 1)-(7 × 7) surfaces, followed by air-exposure, have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short-range (7 × 7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(1 1 1)-(7 × 7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ∼2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(1 1 1)-(7 × 7) surfaces has been investigated by in situ RHEED and STM and ex situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550 °C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [11 ¯ 0] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si along with its twin [1 ¯ 10] Ag ||[11 ¯ 0] Si , (1 1 1) Ag || (1 1 1) Si , as observed for epitaxial growth of Ag on Si(1 1 1) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si[1 1 1] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(1 1 1) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short-range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

Directory of Open Access Journals (Sweden)

Yu-Jun Zhang

2015-07-01

Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica

International Nuclear Information System (INIS)

Qi, J L; Nagashio, K; Nishimura, T; Toriumi, A

2014-01-01

Clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for top-gate insulator research on graphene, as well as graphene channel research, by transferring graphene on to SiO 2 /Si substrates. After adjusting the graphene growth conditions, the surface roughness of the graphene/Cu/mica substrate and the average smoothed areas are ∼0.34 nm and ∼100 μm 2 , respectively. The orientation of graphene in the graphene/Cu/mica substrate can be identified by the hexagonal void morphology of Cu. Moreover, we demonstrate a relatively high mobility of ∼4500 cm 2 V −1 s −1 in graphene transferred on the SiO 2 /Si substrate. These results suggest that the present graphene/Cu/mica substrate can be used for top-gate insulator research on graphene. (papers)

Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

Science.gov (United States)

Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

2017-06-01

The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

Preparation of hcp-Ni(112-bar 0) epitaxial thin films on Au(100) single-crystal underlayers

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

Ni epitaxial films with an hcp structure are successfully obtained on Au(100) single-crystal underlayers formed on MgO(100) substrates at temperatures lower than 300 0 C by molecular beam epitaxy. With increasing the substrate temperature, the volume ratio of more stable fcc phase inc r eases in the film. The Ni film prepared at 100 0 C consists primarily of hcp crystal with the (112-bar 0) plane parallel to the substrate surface coexisting with a small amount of fcc-Ni(100) crystal. The lattice constant of hcp-Ni crystal is determined as a = 0.249 nm, c = 0.398 nm, and c/a = 1.60.

Bi-epitaxial tilted out-of-plane YBCO junctions on NdGaO{sub 3} substrates with YSZ seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Benacka, S.; Strbik, V. (Institute of Electrical Engineering SAS, Bratislava (SK))

2008-10-15

Bi-epitaxial junctions with out-of plane tilt of the c axis were fabricated of YBCO superconducting thin films on NdGaO{sub 3} substrates with different miscut angles. Bi-epitaxial growth was provided by implementation of an Y:ZrO{sub 2} seeding layer on a certain part of the substrate. Junctions with different orientation of the bi-epitaxial boundaries were fabricated, their DC electrical properties were studied as a function of the boundary orientation angle. The junctions showed extremely high critical current densities for all tested miscut angles and bi-epitaxial boundary orientations (about 105 A/cm2 at 77 K and up to 106 A/cm2 at 4.2 K). The dependence of critical current density on the bi-epitaxial boundary orientation angle may be explained as an effect of a d-wave pairing mechanism in the HTSC with the simple Sigrist-Rice model. The studied boundaries may be considered as model structures for the grain boundaries in the coated conductors. (au)

(211) oriented ZnTe growth on m-plane sapphire by MBE

Energy Technology Data Exchange (ETDEWEB)

Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

2013-11-15

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

2016-01-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction

International Nuclear Information System (INIS)

Dadgar, A; Schulze, F; Wienecke, M; Gadanecz, A; Blaesing, J; Veit, P; Hempel, T; Diez, A; Christen, J; Krost, A

2007-01-01

GaN-on-silicon is a low-cost alternative to growth on sapphire or SiC. Today epitaxial growth is usually performed on Si(111), which has a threefold symmetry. The growth of single crystalline GaN on Si(001), the material of the complementary metal oxide semiconductor (CMOS) industry, is more difficult due to the fourfold symmetry of this Si surface leading to two differently aligned domains. We show that breaking the symmetry to achieve single crystalline growth can be performed, e.g. by off-oriented substrates to achieve single crystalline device quality GaN layers. Furthermore, an exotic Si orientation for GaN growth is Si(110), which we show is even better suited as compared to Si(111) for the growth of high quality GaN-on-silicon with a nearly threefold reduction in the full width at half maximum (FWHM) of the (1 1-bar 0 0)ω-scan. It is found that a twofold surface symmetry is in principal suitable for the growth of single crystalline GaN on Si

Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

International Nuclear Information System (INIS)

Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

2004-01-01

We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

Preparation of hcp-Ni(112-bar 0) epitaxial thin films on Au(100) single-crystal underlayers

Energy Technology Data Exchange (ETDEWEB)

Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

Ni epitaxial films with an hcp structure are successfully obtained on Au(100) single-crystal underlayers formed on MgO(100) substrates at temperatures lower than 300 {sup 0}C by molecular beam epitaxy. With increasing the substrate temperature, the volume ratio of more stable fcc phase inc{sub r}eases in the film. The Ni film prepared at 100 {sup 0}C consists primarily of hcp crystal with the (112-bar 0) plane parallel to the substrate surface coexisting with a small amount of fcc-Ni(100) crystal. The lattice constant of hcp-Ni crystal is determined as a = 0.249 nm, c = 0.398 nm, and c/a = 1.60.

Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

NARCIS (Netherlands)

Wan, X.; Houwman, Evert Pieter; Steenwelle, Ruud Johannes Antonius; van Schaijk, R.; Nguyen, Duc Minh; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

2014-01-01

Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti

Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

Energy Technology Data Exchange (ETDEWEB)

Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A., E-mail: bparkin1@uwyo.edu [Department of Chemistry, School of Energy Resources, University of Wyoming, Laramie, Wyoming 82071 (United States)

2015-01-15

Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

Role of Y in the oxidation resistance of CrAlYN coatings

Energy Technology Data Exchange (ETDEWEB)

Domínguez-Meister, S.; El Mrabet, S. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda., Américo Vespucio 49, Sevilla 41092 (Spain); Escobar-Galindo, R. [Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, Cantoblanco 28049 (Spain); Mariscal, A.; Jiménez de Haro, M.C.; Justo, A. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda., Américo Vespucio 49, Sevilla 41092 (Spain); Brizuela, M. [TECNALIA, Mikeletegui Pasealekua, 2, Donostia-San Sebastián 20009 (Spain); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda., Américo Vespucio 49, Sevilla 41092 (Spain); Sánchez-López, J.C., E-mail: jcslopez@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. Sevilla), Avda., Américo Vespucio 49, Sevilla 41092 (Spain)

2015-10-30

Highlights: • The oxidation behavior of CrAlYN films (Al < 10 at.%) depends on the Al/Y distribution. • ∼4 at.% Y enhances the oxidation resistance up to 1000 °C of CrAlYN-coated M2 steels. • Controlled inward oxygen diffusion affects positively the film oxidation resistance. • Mixed Al–Y oxides appear to block the diffusion of elements from the substrate. • Yttrium modifies the passivation layer composition by increasing the Al/Cr ratio. - Abstract: CrAlYN coatings with different aluminum (4–12 at.%) and yttrium (2–5 at.%) contents are deposited by d.c. reactive magnetron sputtering on silicon and M2 steel substrates using metallic targets and Ar/N{sub 2} mixtures. The influence of the nanostructure and chemical elemental distribution on the oxidation resistance after heating in air at 1000 °C is studied by means of cross-sectional scanning electron microscopy (X-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and glow discharge optical emission spectroscopy (GD-OES). The sequential exposure to the metallic targets during the synthesis leads to a multilayer structure where concentration of metallic elements (Cr, Al and Y) is changing periodically. A good oxidation resistance is observed when Al- and Y-rich regions are separated by well-defined CrN layers, maintaining crystalline coherence along the columnar structure. This protective behavior is independent of the type of substrate and corresponds to the formation of a thin mixed (Al, Cr)-oxide scale that protects the film underneath. The GD-OES and XRD analysis have demonstrated that Y acts as a reactive element, blocking the Fe and C atoms diffusion from the steel and favoring higher Al/Cr ratio in the passivation layer after heating. The coating with Y content around 4 at.% exhibited the best performance with a thinner oxide scale, a delay in the CrN decomposition and transformation to Cr{sub 2}N, and a more effective Fe and C blocking.

In situ control of As dimer orientation on Ge(100) surfaces

International Nuclear Information System (INIS)

Brückner, Sebastian; Döscher, Henning; Supplie, Oliver; Luczak, Johannes; Barrigón, Enrique; Rey-Stolle, Ignacio; Kleinschmidt, Peter; Hannappel, Thomas

2012-01-01

We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As 4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100):As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100):As surfaces.

In situ control of As dimer orientation on Ge(100) surfaces

Energy Technology Data Exchange (ETDEWEB)

Brueckner, Sebastian; Doescher, Henning [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Technische Universitaet Ilmenau, Institut fuer Physik, Postfach 10 05 65, 98684 Ilmenau (Germany); Supplie, Oliver; Luczak, Johannes [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Barrigon, Enrique; Rey-Stolle, Ignacio [Instituto de Energia Solar, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Kleinschmidt, Peter [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); CiS Forschungsinstitut fuer Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Strasse 14, 99099 Erfurt (Germany); Hannappel, Thomas [Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Technische Universitaet Ilmenau, Institut fuer Physik, Postfach 10 05 65, 98684 Ilmenau (Germany); CiS Forschungsinstitut fuer Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Strasse 14, 99099 Erfurt (Germany)

2012-09-17

We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As{sub 4} during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100):As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100):As surfaces.

Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

Directory of Open Access Journals (Sweden)

Ge FF

2010-01-01

Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

Preferential orientation relationships in Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films

Energy Technology Data Exchange (ETDEWEB)

Lacotte, M.; David, A.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)

2015-07-28

A high-throughput investigation of local epitaxy (called combinatorial substrate epitaxy) was carried out on Ca{sub 2}MnO{sub 4} Ruddlesden-Popper thin films of six thicknesses (from 20 to 400 nm), all deposited on isostructural polycrystalline Sr{sub 2}TiO{sub 4} substrates. Electron backscatter diffraction revealed grain-over-grain local epitaxial growth for all films, resulting in a single orientation relationship (OR) for each substrate-film grain pair. Two preferred epitaxial ORs accounted for more than 90% of all ORs on 300 different microcrystals, based on analyzing 50 grain pairs for each thickness. The unit cell over unit cell OR ([100][001]{sub film} ∥ [100][001]{sub substrate}, or OR1) accounted for approximately 30% of each film. The OR that accounted for 60% of each film ([100][001]{sub film} ∥ [100][010]{sub substrate}, or OR2) corresponds to a rotation from OR1 by 90° about the a-axis. OR2 is strongly favored for substrate orientations in the center of the stereographic triangle, and OR1 is observed for orientations very close to (001) or to those near the edge connecting (100) and (110). While OR1 should be lower in energy, the majority observation of OR2 implies kinetic hindrances decrease the frequency of OR1. Persistent grain over grain growth and the absence of variations of the OR frequencies with thickness implies that the growth competition is finished within the first few nm, and local epitaxy persists thereafter during growth.

Structural and electrical properties of c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 thin films

CERN Document Server

Zhang, S T; Sun, H P; Pan Xiao Qing; Tan, W S; Liu, Z G; Ming, N B

2003-01-01

c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 (SBTi) thin films were fabricated on (001)SrTiO sub 3 (STO) single-crystal substrates and Pt/Ti sub 2 /SiO sub 2 /Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including theta-2 theta-scans, rocking curve scans and phi-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD phi-scans to be (001)SBTi || (001)STO, [11-bar 0]SBTi || [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 21...

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

Directory of Open Access Journals (Sweden)

M. C. Onbasli

2014-10-01

Full Text Available Yttrium iron garnet (YIG, Y 3Fe5O12 films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12 substrates with (100 orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe, near-bulk room temperature saturation moments (∼135 emu cm−3, in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

Growth of Ca2MnO4 Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

International Nuclear Information System (INIS)

Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W.; Grygiel, C.; Rohrer, G. S.; Salvador, P. A.; Velazquez, M.; Kloe, R. de

2014-01-01

The local epitaxial growth of pulsed laser deposited Ca 2 MnO 4 films on polycrystalline spark plasma sintered Sr 2 TiO 4 substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca 2 MnO 4 grain had a single OR with the Sr 2 TiO 4 grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001] film ||[100][001] sub . The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

NARCIS (Netherlands)

Dusanowski, L.; Syperek, M.; Marynski, A.; Li, L.H.; Misiewicz, J.; Höfling, S.; Kamp, M.; Fiore, A.; Sek, G.

2015-01-01

We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo

2013-06-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo; Guo, Zaibing; Wang, Qingxiao; Yang, Yang; Bai, Haili

2013-01-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

Synthesis of Epitaxial Single-Layer MoS2 on Au(111).

Science.gov (United States)

Grønborg, Signe S; Ulstrup, Søren; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E; Lauritsen, Jeppe V; Hofmann, Philip; Miwa, Jill A

2015-09-08

We present a method for synthesizing large area epitaxial single-layer MoS2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2 islands to a continuous MoS2 layer. An exceptionally good control over the MoS2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2 nanoislands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within the MoS2 islands, we identify domains rotated by 60° that lead to atomically sharp line defects at domain boundaries. As the MoS2 coverage approaches the limit of a complete single layer, the formation of bilayer MoS2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2 layer from vacuum is not found to affect its quality.

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Organometallic vapor-phase epitaxy theory and practice

CERN Document Server

Stringfellow, Gerald B

1989-01-01

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

Strain dependent microstructural modifications of BiCrO{sub 3} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Kannan, Vijayanandhini, E-mail: kvnandhini@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Arredondo, Miryam; Johann, Florian; Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Labrugere, Christine [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); CeCaMA, University of Bordeaux, ICMCB, F-33600 Pessac (France); Maglione, Mario [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Vrejoiu, Ionela [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

2013-10-31

Strain-dependent microstructural modifications were observed in epitaxial BiCrO{sub 3} (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCO{sub STO} [BCO grown on buffered SrTiO{sub 3} (001)] and in-plane compressive strain, BCO{sub NGO} [BCO grown on buffered NdGaO{sub 3} (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCO{sub STO}, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCO{sub STO} films with d ≥ 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or “modulated structure”) as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM–energy dispersive X-ray analysis. In contrast, compressively strained BCO{sub NGO} films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ∼ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film. - Highlights: • Phase pure

Epitaxial YBa2Cu3O7 on biaxially textured (001) Ni: An approach to high critical current density superconducting tapes

International Nuclear Information System (INIS)

Norton, D.P.; Goyal, A.; Budai, J.D.

1997-01-01

In-plane aligned, c-axis oriented YBa 2 Cu 3 O 7 (YBCO) films with superconducting critical current densities, J c , as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (001) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure Ni, enables the growth of 1.5 micrometer-thick YBCO films with superconducting properties that are comparable to those observed for epitaxial films on single crystal oxide substrates. This result represents a viable approach for producing long-length superconducting tapes for high current, high field applications at 77 kelvin

Low temperature epitaxy of Ge-Sb-Te films on BaF{sub 2} (111) by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Thelander, E., E-mail: erik.thelander@iom-leipzig.de; Gerlach, J. W.; Ross, U.; Lotnyk, A.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung e.V., Leipzig 04318 (Germany)

2014-12-01

Pulsed laser deposition was employed to deposit epitaxial Ge{sub 2}Sb{sub 2}Te{sub 5}-layers on the (111) plane of BaF{sub 2} single crystal substrates. X-ray diffraction measurements show a process temperature window for epitaxial growth between 85 °C and 295 °C. No crystalline growth is observed for lower temperatures, whereas higher temperatures lead to strong desorption of the film constituents. The films are of hexagonal structure with lattice parameters consistent with existing models. X-ray pole figure measurements reveal that the films grow with one single out-of-plane crystal orientation, but rotational twin domains are present. The out-of-plane epitaxial relationship is determined to be Ge{sub 2}Sb{sub 2}Te{sub 5}(0001) || BaF{sub 2}(111), whereas the in-plane relationship is characterized by two directions, i.e., Ge{sub 2}Sb{sub 2}Te{sub 5} [-12-10] || BaF{sub 2}[1-10] and Ge{sub 2}Sb{sub 2}Te{sub 5}[1-210] || BaF{sub 2}[1-10]. Aberration-corrected high-resolution scanning transmission electron microscopy was used to resolve the local atomic structure and confirm the hexagonal structure of the films.

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface

International Nuclear Information System (INIS)

Zhou, H.; Narayan, J.

2006-01-01

Systems containing single domain magnetic particles are of great interest in view of their possible applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this work is plan-view STEM Z-contrast imaging study of the self-assembly growth of magnetic nickel nanostructures by domain matching epitaxy under Volmer-Weber (V-W) mode. The growth was carried out using pulsed laser deposition (PLD) technique with epitaxial titanium nitride film as the template, which was in turn grown on silicon (001) substrate via domain matching epitaxy. Our results show that the base of nickel islands is rectangular with the two principal edges parallel to two orthogonal directions, which is [110] and [1-bar 1 0] for [001] oriented growth. The size distribution of the islands is relatively narrow, comparable to that obtained from self-assembled islands grown under Stranski-Krastanow (S-K) mode. A certain degree of self-organization was also found in the lateral distribution of islands: island chains were observed along the directions close to , which are also the edge directions. The interaction between neighboring islands through the island edge-induced strain field is believed to be responsible for the size uniformity and the lateral ordering

Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2013-09-01

Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

Science.gov (United States)

2016-09-15

AFRL-AFOSR-VA-TR-2016-0319 Chirality -Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and...TELEPHONE NUMBER (Include area code) DISTRIBUTION A: Distribution approved for public release. 15-06-2016 final Jun 2014 - Jun 2016 Chirality ...for Public Release; Distribution is Unlimited. In this report, we present our efforts in establishing a novel and effective approach for chirality

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José ; Burriel, Mó nica

2010-01-01

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Bi-epitaxial YBa2Cu3Ox Thin Films on Tilted-axes NdGaO3 Substrates with CeO2 Seeding Layer

International Nuclear Information System (INIS)

Mozhaev, P B; Mozhaeva, J E; Jacobsen, C S; Hansen, J Bindslev; Bdikin, I K; Luzanov, V A; Kotelyanskii, I M; Zybtsev, S G

2006-01-01

Bi-epitaxial YBa 2 Cu 3 O x (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27 0 were manufactured using pulsed laser deposition on NdGaO 3 tilted-axes substrates with CeO 2 seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed

Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

Energy Technology Data Exchange (ETDEWEB)

Chawla, J. S.; Zhang, X. Y.; Gall, D. [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2011-08-15

Single-crystal Cu(001) layers, 4-1400 nm thick, were deposited on MgO(001) with and without a 2.5-nm-thick TiN(001) buffer layer. X-ray diffraction and reflection indicate that the TiN(001) surface suppresses Cu-dewetting, yielding a 4 x lower defect density and a 9 x smaller surface roughness than if grown on MgO(001) at 25 deg. C. In situ and low temperature electron transport measurements indicate that ultra-thin (4 nm) Cu(001) remains continuous and exhibits partial specular scattering at the Cu-vacuum boundary with a Fuchs-Sondheimer specularity parameter p = 0.6 {+-} 0.2, suggesting that the use of epitaxial wetting layers is a promising approach to create low-resistivity single-crystal Cu nanoelectronic interconnects.

Relationship between bias voltage and microstructure as well as properties of CrAlYN films

International Nuclear Information System (INIS)

Fu Ying-Ying; Li Hong-Xuan; Ji Li; Liu Xiao-Hong; Zhou Hui-Di; Chen Jian-Min; Liu Liu

2015-01-01

In this work, a series of CrAlYN films doped with 1 at.% yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 °C, and good friction and wear properties at 600 and 800 °C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400 °C) due to the serious abrasive wear. (paper)

Growth of Ca{sub 2}MnO{sub 4} Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lacotte, M.; David, A.; Pravarthana, D.; Prellier, W., E-mail: wilfrid.prellier@ensicaen.fr [Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Grygiel, C. [Laboratoire CIMAP, CEA, CNRS UMR 6252, ENSICAEN, Université de Basse-Normandie, 6 Bd Maréchal Juin, F-14050 Caen Cedex 4 (France); Rohrer, G. S.; Salvador, P. A. [Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Velazquez, M. [CNRS, Université de Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Kloe, R. de [AMETEK B.V, EDAX Application Laboratory, Tilburg (Netherlands)

2014-12-28

The local epitaxial growth of pulsed laser deposited Ca{sub 2}MnO{sub 4} films on polycrystalline spark plasma sintered Sr{sub 2}TiO{sub 4} substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew in a grain-over-grain pattern such that each Ca{sub 2}MnO{sub 4} grain had a single OR with the Sr{sub 2}TiO{sub 4} grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001]{sub film}||[100][001]{sub sub}. The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Bhasker, H. P.; Dhar, S.; Sain, A.; Kesaria, Manoj; Shivaprasad, S. M.

2012-01-01

Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Energy Technology Data Exchange (ETDEWEB)

Idigoras, O., E-mail: o.idigoras@nanogune.eu; Suszka, A. K.; Berger, A. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian (Spain); Vavassori, P. [CIC nanoGUNE Consolider, Tolosa Hiribidea 76, E-20018 Donostia-San Sebastian (Spain); IKERBASQUE, The Basque Foundation for Science, E-48011 Bilbao (Spain); Obry, B.; Hillebrands, B. [Fachbereich Physik and Landesforschungzentrum OPTIMAS, Technische Universität Kaiserslautern, Erwin-Schrödinger-Straße 56, D-67663 Kaiserslautern (Germany); Landeros, P. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparaíso (Chile)

2014-02-28

This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

Optical and Dielectric Properties of CuAl₂O₄ Films Synthesized by Solid-Phase Epitaxy

Energy Technology Data Exchange (ETDEWEB)

Leu, L. C. [University of Florida, Gainesville; Norton, David P. [University of Florida; Jellison Jr, Gerald Earle [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Xiong, X. [SuperPower Incorporated, Schenectady, New York

2007-01-01

The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl{sub 2}O{sub 4} was determined to be {approx} 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be {approx} 20-23 at 1-100 kHz.

Oriented hydroxyapatite single crystals produced by the electrodeposition method

Energy Technology Data Exchange (ETDEWEB)

Santos, E.A. dos, E-mail: euler@ufs.br [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Moldovan, M.S. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Jacomine, L. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France); Mateescu, M. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Werckmann, J. [IPCMS - Departement de Surfaces et Interfaces, 23, rue du Loess, BP 43, 67034 Strasbourg (France); Anselme, K. [IS2M - Equipe Interaction Surface-Matiere Vivant, 15, rue Jean Starcky, BP 2488, 68057 Mulhouse (France); Mille, P.; Pelletier, H. [INSA - Groupe Ingenierie des Surfaces, 24, Bld de la Victoire, 67084 Strasbourg (France)

2010-05-25

We propose here the use of cathodic electrodeposition as tool to fabricate implant coatings consisting in nano/micro single crystals of hydroxyapatite (HA), preferentially orientated along the c-axis. Coating characterization is the base of this work, where we discuss the mechanisms related to the deposition of oriented hydroxyapatite thin films. It is shown that when deposited on titanium alloys, the HA coating is constituted by two distinct regions with different morphologies: at a distance of few microns from the substrate, large HA single crystals are oriented along the c-axis and appear to grow up from a base material, consisting in an amorphous HA. This organized system has a great importance for cell investigation once the variables involved in the cell/surface interaction are reduced. The use of such systems could give a new insight on the effect of particular HA orientation on the osteoblast cells.

Single-Sex Schooling: Friendships, Dating, and Sexual Orientation.

Science.gov (United States)

Li, Gu; Wong, Wang Ivy

2018-05-01

Single-sex schooling has been controversial for decades. The current study investigated the differences in friendships, dating, and past, present, and ideal sexual orientation, between 207 college students who attended single-sex secondary schools and 249 college students who attended coeducational secondary schools in Hong Kong, controlling for personal characteristics such as socioeconomic status. We found that, compared to graduates of coeducational schools, graduates of single-sex schools reported a different gender composition in intimate friendships favoring the same sex, less romantic involvement with other-sex close friends, older age at first date, fewer boyfriends or girlfriends, and more past same-sex sexuality. In contrast, we found no significant differences in the interactions with same-sex versus other-sex friends, most aspects of past or present dating engagement, or self-reported present or ideal sexual orientation. These findings give insight into the interpersonal outcomes of single-sex schooling and fill a gap in previous research which has focused on academic achievement and gender role stereotypes.

Oriented growing and anisotropy of emission properties of lanthanum hexaboride single crystals

International Nuclear Information System (INIS)

Lazorenko, V.I.; Lotsko, D.V.; Platonov, V.F.; Kovalev, A.V.; Galasun, A.P.; Matvienko, A.A.; Klinkov, A.E.

1987-01-01

Single crystals of lanthanum hexaboride with preset crystallographic orientation are grown by the method of crucible-free zone melting. It is shown that oriented growing of single crystals of the given compound is possible only when using seed crystals of the required orientation because no predominant orientation of the LaB 6 growth is found in case of spontaneous crystallization. Orientation of spontaneously growing LaB 6 crystals does not depend on their growth rate, degree of the melt diffusion annealing, purity of the inital powder. Anisotropy of the electronic work function for single crystal lanthanum hexaboride is confirmed. Its value grows as (100)<(110)<(111). Conditions of the preliminary thermovacuum purification of the surface are shown to affect the measured work function

Singularities of 28Si electrical activation in a single crystal and epitaxial GaAs under radiation annealing

International Nuclear Information System (INIS)

Ardyshev, V.M.; Ardyshev, M.V.; Khludkov, S.S.

2000-01-01

Using the voltage-capacitance characteristics method, the concentration profiles of 28 Si that is implanted in monocrystal and epitaxial GaAs after fast thermal annealing (FTA) (825, 870, 950 deg C, 12 s) have been studied; using Van-der-Paw method, the electron Hall mobility temperature dependence in the range of 70-400 K has been measured. Unlike thermal annealing (800 deg C, 30 min), the silicon diffusion depth redistribution into GaAs is shown to occur for both types of material. The coefficient of diffusion of Si in the single crystal is 2 times greater, but the electrical activation efficiency is somewhat less than in the epitaxial GaAs for each of the temperatures of FTA. The analysis of the temperature dependence of the electron mobility in ion-implanted layers after FTA gives the evidence about the significantly lower concentration of defects restricting the mobility in comparison with results obtained at thermal annealing during 30 min [ru

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.

2010-01-21

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

Thin (111) oriented CoFe{sub 2}O{sub 4} and Co{sub 3}O{sub 4} films prepared by decomposition of layered cobaltates

Energy Technology Data Exchange (ETDEWEB)

Buršík, Josef, E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Soroka, Miroslav, E-mail: soroka@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Uhrecký, Róbert, E-mail: uhrecky@iic.cas.cz [Institute of Inorganic Chemistry of the Academy of Sciences of the Czech Republic, v.v.i., 250 68 Husinec-Řež 1001 (Czech Republic); Kužel, Radomír, E-mail: kuzel@karlov.mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Praha 2 (Czech Republic); Mika, Filip, E-mail: filip.mika@isibrno.cz [Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, v.v.i., Královopolská 147, 612 64 Brno (Czech Republic); Huber, Štěpán, E-mail: stepan.huber@vscht.cz [University of Chemistry and Technology, Faculty of Chemical Technology, Technická 5, 166 28 Prague 6 (Czech Republic)

2016-07-15

Graphical abstract: Pole figures of NaCoO{sub 2} (left) and of CoFe{sub 2}O{sub 4} (right) films formed through the transformation of O3-type NaCoO{sub 2} phase in consequence of sodium deintercalation occurring at 800 °C. Films were prepared by chemical solution deposition on MgO(111) substrate. - Highlights: • Epitaxial Na(CoFe)O{sub 2} thin films by means of chemical solution deposition were prepared. • Oriented spinel films through transformation of Na(CoFe)O{sub 2} were obtained. • Orientation relation to MgO, SrTiO{sub 3} and Zr(Y)O{sub 2} substrates were determined. • Structural aspects of Na(CoFe)O{sub 2} → CoFe{sub 2}O{sub 4} transformation pathway were elucidated. - Abstract: The formation and structural characterization of highly (111)-oriented Co{sub 3}O{sub 4} and CoFe{sub 2}O{sub 4} films prepared by a novel procedure from 00l-oriented NaCoO{sub 2} and Na(CoFe)O{sub 2} is reported. The Na(CoFe)O{sub 2} films were deposited on MgO, SrTiO{sub 3}, LaAlO{sub 3}, and Zr(Y)O{sub 2} single crystals with (100) and (111) orientations by chemical solution deposition method and crystallized at 700 °C. Subsequently they were transformed into (111)-oriented spinel phase during post-growth annealing at 800–1000 °C. Morphology and structure of the films was investigated by means of scanning electron microscopy and X-ray diffraction. While all spinel films exhibit pronounced out-of-plane orientation irrespective of substrate, the rate of in-plane orientation strongly depend on lattice misfit values. Different epitaxial phenomena ranging from true one-to-one epitaxy to the existence of many-to-one epitaxy involving two or more orientations were determined by full 3D texture analysis.

Orientation and magnetic properties of FePt and CoPt films grown on MgO(1 1 0) single-crystal substrate by electron-beam coevaporation

Energy Technology Data Exchange (ETDEWEB)

Yu Minghui [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States)], E-mail: myu1@uno.edu; Ohguchi, H.; Zambano, A.; Takeuchi, I. [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Liu, J.P. [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States); Josell, D.; Bendersky, L.A. [Metallurgy Division, Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

2007-09-25

We have studied the orientation and magnetic properties of FePt and CoPt films deposited by electron-beam co-evaporation on MgO(1 1 0) single-crystal substrates at substrate temperatures from 500 to 700 deg. C. We observed that long-range chemical ordering of the L1{sub 0} structure occurred over the entire range of substrate temperatures in FePt films and at 600 deg. C and up in CoPt films. Growth of FePt and CoPt yielded epitaxial films with cube-on-cube orientation of the pseudo-cubic L1{sub 0} lattice with respect to the cubic MgO. X-ray diffraction patterns and magnetization loops of the FePt and CoPt films revealed the existence of L1{sub 0} domains with the tetragonal c axis inclined at 45 deg. to the film plane, orientations (0 h h) and (h 0 h), as well as L1{sub 0} domains with the tetragonal c axis in the plane of the film, orientation (h h 0). The FePt and CoPt films for which X-ray diffraction indicated tetragonal phase was present all exhibited hard magnetic properties with easy axis along the [0 0 1] substrate direction as well as large in-plane magnetocrystalline anisotropy.

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Orientation-controlled synthesis and magnetism of single crystalline Co nanowires

International Nuclear Information System (INIS)

Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian

2012-01-01

Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.

Epitaxial growth of textured YBa2Cu3O7-δ films on silver

International Nuclear Information System (INIS)

Liu Dan-Min; Liu Wei-Peng; Suo Hong-Li; Zhou Mei-Ling

2005-01-01

YBa 2 Cu 3 O 7-δ (YBCO) films were deposited on (100), (110) and (111) oriented silver single crystals and {100} left angle 100 right angle, {110} left angle 211 right angle, {110} left angle 100 right angle +{110} left angle 011 right angle {110} left angle 011 right angle and {012} left angle 100 right angle textured Ag substrates using pulsed laser deposition. The relationship between the epitaxial growth YBCO film and silver substrate has been determined. It is shown that among polycrystalline Ag substrates, {110} left angle 011 right angle textured tape is suitable for the deposition of YBCO thin films having strong texture. (orig.)

Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

International Nuclear Information System (INIS)

Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

2003-01-01

An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

Cyclic saturation dislocation structures of multiple-slip-oriented copper single crystals

International Nuclear Information System (INIS)

Li, X.W.; Chinese Academy of Sciences, Shenyang; Umakoshi, Y.; Li, S.X.; Wang, Z.G.

2001-01-01

The dislocation structures of [011] and [ anti 111] multiple-slip-oriented Cu single crystals cyclically saturated at constant plastic strain amplitudes were investigated through transmission electron microscopy. The results obtained on [001] multiple-slip-oriented Cu single crystals were also included for summarization. Unlike the case for single-slip-oriented Cu single crystals, the crystallographic orientation has a strong effect on the saturation dislocation structure in these three multiple-slip-oriented crystals. For the [011] crystal, different dislocation patterns such as veins, PSB walls, labyrinths and PSB ladders were observed. The formation of PSB ladders is believed to be a major reason for the existence of a plateau region in the cyclic stress-strain (CSS) curve for the [011] crystal. The cyclic saturation dislocation structure of a [ anti 111] crystal cycled at a low applied strain amplitude γ pl of 2.0 x 10 -4 was found to consist of irregular cells, which would develop into a more regular arrangement (e. g. PSB ladder-like) and the scale of which tends to decrease with increasing γ pl . Finally, three kinds of representative micro-deformation mode were summarized and termed as labyrinth-mode (or [001]-mode), cell-mode (or [ anti 111]-mode) and PSB ladder-mode (or [011]-mode). (orig.)

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

Controllable factors affecting the epitaxial quality of LaCoO 3 films ...

Indian Academy of Sciences (India)

treatment temperature and a relatively rapid rate of heating can effectively preventnucleus from growing in other orientations, thereby improving the epitaxial quality of film. Besides, the choice of spin speed will directly affect the thickness and ...

Oriented circular dichroism analysis of chiral surface-anchored metal-organic frameworks grown by liquid-phase epitaxy and upon loading with chiral guest compounds

KAUST Repository

Gu, Zhigang

2014-06-17

Oriented circular dichroism (OCD) is explored and successfully applied to investigate chiral surface-anchored metal-organic frameworks (SURMOFs) based on camphoric acid (D- and Lcam) with the composition [Cu2(Dcam) 2x(Lcam)2-2x(dabco)]n (dabco=1,4-diazabicyclo- [2.2.2]-octane). The three-dimensional chiral SURMOFs with high-quality orientation were grown on quartz glass plates by using a layer-by-layer liquid-phase epitaxy method. The growth orientation, as determined by X-ray diffraction (XRD), could be switched between the [001] and [110] direction by using either OH- or COOH-terminated substrates. These SURMOFs were characterized by using OCD, which confirmed the ratio as well as the orientation of the enantiomeric linker molecules. Theoretical computations demonstrate that the OCD band intensities of the enantiopure [Cu2(Dcam)2(dabco)] n grown in different orientations are a direct result of the anisotropic nature of the chiral SURMOFs. Finally, the enantiopure [Cu 2(Dcam)2(dabco)]n and [Cu2(Lcam) 2(dabco)]n SURMOFs were loaded with the two chiral forms of ethyl lactate [(+)-ethyl-D-lactate and (-)-ethyl-L-lactate)]. An enantioselective enrichment of >60 % was observed by OCD when the chiral host scaffold was loaded from the racemic mixture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oriented circular dichroism analysis of chiral surface-anchored metal-organic frameworks grown by liquid-phase epitaxy and upon loading with chiral guest compounds

KAUST Repository

Gu, Zhigang; Bü rck, Jochen; Bihlmeier, Angela; Liu, Jinxuan; Shekhah, Osama; Weidler, Peter G.; Azucena, Carlos; Wang, Zhengbang; Heiß ler, Stefan; Gliemann, Hartmut; Klopper, Wim; Ulrich, Anne S.; Wö ll, Christof H.

2014-01-01

Oriented circular dichroism (OCD) is explored and successfully applied to investigate chiral surface-anchored metal-organic frameworks (SURMOFs) based on camphoric acid (D- and Lcam) with the composition [Cu2(Dcam) 2x(Lcam)2-2x(dabco)]n (dabco=1,4-diazabicyclo- [2.2.2]-octane). The three-dimensional chiral SURMOFs with high-quality orientation were grown on quartz glass plates by using a layer-by-layer liquid-phase epitaxy method. The growth orientation, as determined by X-ray diffraction (XRD), could be switched between the [001] and [110] direction by using either OH- or COOH-terminated substrates. These SURMOFs were characterized by using OCD, which confirmed the ratio as well as the orientation of the enantiomeric linker molecules. Theoretical computations demonstrate that the OCD band intensities of the enantiopure [Cu2(Dcam)2(dabco)] n grown in different orientations are a direct result of the anisotropic nature of the chiral SURMOFs. Finally, the enantiopure [Cu 2(Dcam)2(dabco)]n and [Cu2(Lcam) 2(dabco)]n SURMOFs were loaded with the two chiral forms of ethyl lactate [(+)-ethyl-D-lactate and (-)-ethyl-L-lactate)]. An enantioselective enrichment of >60 % was observed by OCD when the chiral host scaffold was loaded from the racemic mixture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nucleation Mechanisms of Aromatic Polyesters, PET, PBT, and PEN, on Single-Wall Carbon Nanotubes: Early Nucleation Stages

Directory of Open Access Journals (Sweden)

Adriana Espinoza-Martínez

2012-01-01

Full Text Available Nucleation mechanisms of poly(ethylene terephthalate (PET, poly(butylene terephthalate (PBT, and poly(ethylene naphthalate (PEN on single-wall carbon nanotubes (SWNTs are proposed, based on experimental evidence, theoretical epitaxy analysis, and semiempirical quantum chemical calculations. In order to elucidate early nucleation stages polyester-coated nanotubes were obtained from highly diluted solutions. High-resolution transmission electron microscopy (HRTEM revealed helical morphologies for PET/SWNTs and PEN/SWNTs and the formation of lobules with different orientations for PBT/SWNTs. To explain the morphological behavior one model was proposed based on crystallographic interactions, that is, epitaxy. Theoretical epitaxy calculations indicated that epitaxy is not possible from the strict epitaxy point of view. Instead, aromatic self-assembly mechanism was proposed based on π-π interactions and the chirality of the nanotube. It was proposed that the mechanism implies two steps to produce helical or lobular morphologies with different orientations. In the first step polymer chains were approached, aligned parallel to the nanotube axis and adsorbed due to electrostatic interactions and the flexibility of the molecule. However, due to π-π interactions between the aromatic rings of the polymer and the nanotube, in the second step chains reoriented on the nanotube surface depending on the chirality of the nanotube. The mechanism was supported by semi-empirical calculations.

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

2015-02-23

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

International Nuclear Information System (INIS)

Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

2015-01-01

Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

The crystal structure and twinning of neodymium gallium perovskite single crystals

International Nuclear Information System (INIS)

Ubizskii, S.B.; Vasylechko, L.O.; Savytskii, D.I.; Matkovskii, A.O.; Syvorotka, I.M.

1994-01-01

By means of X-ray structure analysis, the crystal structure of neodymium gallium perovskite (NGP) single crystals (NdGaO 3 ) being used as a substrate for HTSC film epitaxy has been refined and the position of atoms has been determined. The possibility of YBa 2 Cu 3 O 7-x film epitaxy on the plane (110) of NGP crystal as well as its advantages and pitfalls are analysed from structural data. The twinning types in the NGP crystal were established. The twinning structure of NGP substrates is found to be stable up to a temperature of 1173 K, as differentiated from the LaGaO 3 and LaAlO 3 substrates. It is intimated that the twinning in the NGP substrates oriented as (001) can result in creation of 90 degrees twin bonds in a film, and in the case of (110)-oriented plates it is possible to ignore the twinning presence in substrate completely. (author)

Epitaxial growth of Ge-Sb-Te based phase change materials

Energy Technology Data Exchange (ETDEWEB)

Perumal, Karthick

2013-07-30

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Microwave dynamics of YBCO bi-epitaxial Josephson structures

DEFF Research Database (Denmark)

Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

1996-01-01

The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

Z-Contrast STEM Imaging of Long-Range Ordered Structures in Epitaxially Grown CoPt Nanoparticles

Directory of Open Access Journals (Sweden)

Kazuhisa Sato

2013-01-01

Full Text Available We report on atomic structure imaging of epitaxial L10 CoPt nanoparticles using chemically sensitive high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM. Highly ordered nanoparticles formed by annealing at 973 K show single-variant structure with perpendicular c-axis orientation, while multivariant ordered domains are frequently observed for specimens annealed at 873 K. It was found that the (001 facets of the multivariant particles are terminated by Co atoms rather than by Pt, presumably due to the intermediate stage of atomic ordering. Coexistence of single-variant particles and multivariant particles in the same specimen film suggests that the interfacial energy between variant domains be small enough to form such structural domains in a nanoparticle as small as 4 nm in diameter.

Plasticity and microstructure of epitaxial Ag/Ni multilayers; Mechanische Eigenschaften und Mikrostruktur epitaktischer Ag/Ni-Multilagenschichten

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias K.

2007-10-15

To meet the still increasing technical demands of new materials, it is required to improve basic knowledge of thin films and multilayers. This thesis describes the microstructure and mechanical behaviour of thin epitaxial Ag/Ni-multilayers. Former investigations were only done on polycrystalline multilayers or epitaxial single layers. The manufacture of epitaxial Ag/Ni-multilayers on (111) orientated Si-substrates was performed by a magnetron sputtering technique under ultra high vacuum (UHV). The thickness of the alternating Ag- and Ni-layers varies between 100 and 400 nm, the thickness of the whole film varies between 200 and 800 nm. Hardness and flow stress of Ag/Ni-multilayers were measured with a nanoindentation technique, a substrate curvature method and by X-ray diffraction. The hardness of these multilayers varies between 1.5 and 2.0 GPa. The Ag single film hardness is 0.5 GPa and Ni film 1.8 GPa. The flow stress of the Ag/Ni-multilayers varies between 350 and 800 MPa. The Ag single layer shows a flow stress of 100 MPa and Ni of 450 MPa. Both hardness and flow stress increase with decreasing layer thickness. In situ TEM and HRTEM experiments showed a semicoherent Ag/Ni-interface. It was observed that these interfaces act as sources and sinks. Dislocation loops formed at the interface expand and shrink according to the stress state. They combine with loops from the opposite interface or with the interface itself and form threading dislocations. Dislocation loops penetrating an interface were not observed. Results were compared with various models which simulate flow stress in thin films and multilayers. The most important models are calculated by Nix-Freund, the Source-model after von Blanckenhagen and the Hall-Petch-model. (orig.)

Epitaxial TiO 2/SnO 2 core-shell heterostructure by atomic layer deposition

KAUST Repository

Nie, Anmin

2012-01-01

Taking TiO 2/SnO 2 core-shell nanowires (NWs) as a model system, we systematically investigate the structure and the morphological evolution of this heterostructure synthesized by atomic layer deposition/epitaxy (ALD/ALE). All characterizations, by X-ray diffraction, high-resolution transmission electron microscopy, selected area electron diffraction and Raman spectra, reveal that single crystalline rutile TiO 2 shells can be epitaxially grown on SnO 2 NWs with an atomically sharp interface at low temperature (250 °C). The growth behavior of the TiO 2 shells highly depends on the surface orientations and the geometrical shape of the core SnO 2 NW cross-section. Atomically smooth surfaces are found for growth on the {110} surface. Rough surfaces develop on {100} surfaces due to (100) - (1 × 3) reconstruction, by introducing steps in the [010] direction as a continuation of {110} facets. Lattice mismatch induces superlattice structures in the TiO 2 shell and misfit dislocations along the interface. Conformal epitaxial growth has been observed for SnO 2 NW cores with an octagonal cross-section ({100} and {110} surfaces). However, for a rectangular core ({101} and {010} surfaces), the shell also derives an octagonal shape from the epitaxial growth, which was explained by a proposed model based on ALD kinetics. The surface steps and defects induced by the lattice mismatch likely lead to improved photoluminescence (PL) performance for the yellow emission. Compared to the pure SnO 2 NWs, the PL spectrum of the core-shell nanostructures exhibits a stronger emission peak, which suggests potential applications in optoelectronics. © The Royal Society of Chemistry 2012.

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

Science.gov (United States)

Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

2014-09-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} Thin Films on Tilted-axes NdGaO{sub 3} Substrates with CeO{sub 2} Seeding Layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P B [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Mozhaeva, J E [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Jacobsen, C S [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Hansen, J Bindslev [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Bdikin, I K [CICECO, University of Aveiro, Aveiro, 3810-193 (Portugal); Luzanov, V A [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Kotelyanskii, I M [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Zybtsev, S G [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation)

2006-06-01

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27{sup 0} were manufactured using pulsed laser deposition on NdGaO{sub 3} tilted-axes substrates with CeO{sub 2} seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed.

Orientation sensors by defocused imaging of single gold nano-bipyramids

Science.gov (United States)

Zhang, Fanwei; Li, Qiang; Rao, Wenye; Hu, Hongjin; Gao, Ye; Wu, Lijun

2018-01-01

Optical probes for nanoscale orientation sensing have attracted much attention in the field of single-molecule detections. Noble metal especially Au nanoparticles (NPs) exhibit extraordinary plasmonic properties, great photostability, excellent biocompatibility and nontoxicity, and thereby could be alternative labels to conventional applied organic dyes or quantum dots. One type of the most interesting metallic NPs is Au nanorods (AuNRs). Its anisotropic emission accompanied with anisotropic shape is potentially applicable in orientation sensing. Recently, we resolved the 3D orientation of single AuNRs within one frame by deliberately introducing an aberration (slight shift of the dipole away from the focal plane) to the imaging system1 . This defocused imaging technique is based on the electron transition dipole approximation and the fact that the dipole radiation exhibits an angular anisotropy. Since the photoluminescence quantum yield (PLQY) can be enhanced by the "lightning rod effect" (at a sharp angled surface) and localized SPR modes, that of the single Au nano-bipyramid (AuNB) with more sharp tips or edges was found to be doubled comparing to AuNRs with a same effective size2. Here, with a 532 nm excitation, we find that the PL properties of individual AuNBs can be described by three perpendicularly-arranged dipoles (with different ratios). Their PL defocused images are bright, clear and exhibit obvious anisotropy. These properties suggest that AuNBs are excellent candidates for orientation sensing labels in single molecule detections.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Directory of Open Access Journals (Sweden)

Rui Sun

2016-06-01

Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Energy Technology Data Exchange (ETDEWEB)

Sun, Rui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Makise, Kazumasa; Terai, Hirotaka [Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan); Zhang, Lu [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Wang, Zhen, E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Tech University, Shanghai 201210 (China)

2016-06-15

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Orientational epitaxy in adsorbed monolayers

International Nuclear Information System (INIS)

Novaco, A.D.; McTague, J.P.

1977-01-01

The ground state for adsorbed monolayers on crystalline substrates is shown to involve a definite relative orientation of the substrate and adsorbate crystal axes, even when the relative lattice parameters are incommensurate. The rotation angle which defines the structure of the monolayer-substrate system is determined by the competition between adsorbate-substrate and adsorbate-adsorbate energy terms, and is generally not a symmetry angle. Numerical predictions are presented for the rare gas-graphite systems, whose interaction potentials are rather well known. Recent LEED data for some of these systems appear to corroborate these predictions

Epitaxial patterning of thin-films: conventional lithographies and beyond

International Nuclear Information System (INIS)

Zhang, Wei; Krishnan, Kannan M

2014-01-01

Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices. (topical review)

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Liquid-phase epitaxy of InGaAsP solid solutions on profiled substrates of InP(100)

International Nuclear Information System (INIS)

Dvoryankin, V.F.; Kaevitser, L.R.; Komarov, A.A.; Telegin, A.A.; Khusid, L.B.; Chernushin, M.D.

1990-01-01

Peculiarities of selective growth of InGaAsP solid solutions under liquid-phase epitaxy in shallow grooves are considered. InGaAsP crystals grown in grooves oriented along crystallografic [110] and [011] directions are determined to trend to equilibrium form under two-phase epitaxy, while wedge-shaped form of In 0.77 Ga 0.23 As 0.53 P 0.45 and In 0.53 P o.45 and IN 0.59 Ga 0.41 As 0.83 P 0.12 epitaxial layers obtained in grooves is determined by their composition only and does not depend on groove configuration

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

Energy Technology Data Exchange (ETDEWEB)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

International Nuclear Information System (INIS)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Task-oriented control of Single-Master Multi-Slave Manipulator System

International Nuclear Information System (INIS)

Kosuge, Kazuhiro; Ishikawa, Jun; Furuta, Katsuhisa; Hariki, Kazuo; Sakai, Masaru.

1994-01-01

A master-slave manipulator system, in general, consists of a master arm manipulated by a human and a slave arm used for real tasks. Some tasks, such as manipulation of a heavy object, etc., require two or more slave arms operated simultaneously. A Single-Master Multi-Slave Manipulator System consists of a master arm with six degrees of freedom and two or more slave arms, each of which has six or more degrees of freedom. In this system, a master arm controls the task-oriented variables using Virtual Internal Model (VIM) based on the concept of 'Task-Oriented Control'. VIM is a reference model driven by sensory information and used to describe the desired relation between the motion of a master arm and task-oriented variables. The motion of slave arms are controlled based on the task oriented variables generated by VIM and tailors the system to meet specific tasks. A single-master multi-slave manipulator system, having two slave arms, is experimentally developed and illustrates the concept. (author)

Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: nukaga@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

2010-01-01

Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 {sup 0}C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90{sup 0} each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

International Nuclear Information System (INIS)

Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

Epitaxial growth of mixed conducting layered Ruddlesden–Popper Lan+1NinO3n+1 (n = 1, 2 and 3) phases by pulsed laser deposition

International Nuclear Information System (INIS)

Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J.

2013-01-01

Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO 3 and NdGaO 3 substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La n+1 Ni n O 3n+1 (n = 1, 2 and 3) have been epitaxially grown on SrTiO 3 (0 0 1) or NdGaO 3 (1 1 0) single crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time

Role of crystal orientation on chemical mechanical polishing of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang

2016-11-15

Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.

Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

International Nuclear Information System (INIS)

Chen, Yen-Ting; Araki, Tsutomu; Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens; Chen, Li-Chyong; Chen, Kuei-Hsien; Nanishi, Yasushi

2013-01-01

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm

Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

2013-11-11

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

International Nuclear Information System (INIS)

McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

1989-01-01

This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

Orientation dependence of the thermal fatigue of nickel alloy single crystals

Energy Technology Data Exchange (ETDEWEB)

Dul' nev, R A; Svetlov, I L; Bychkov, N G; Rybina, T V; Sukhanov, N N

1988-11-01

The orientation dependence of the thermal stability and the thermal fatigue fracture characteristics of single crystals of MAR-M200 nickel alloy are investigated experimentally using X-ray diffraction analysis and optical and scanning electron microscopy. It is found that specimens with the 111-line orientation have the highest thermal stability and fatigue strength. Under similar test conditions, the thermal fatigue life of single crystals is shown to be a factor of 1.5-2 higher than that of the directionally solidified and equiaxed alloys. 6 references.

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films.

Science.gov (United States)

Kaspar, Tiffany C; Hong, Seungbum; Bowden, Mark E; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R; Comes, Ryan B; Ramuhalli, Pradeep; Henager, Charles H

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200 °C due to the low Curie temperature of the piezoelectric material. Strengthening the piezoelectric coupling of high-temperature piezoelectric materials, such as La 2 Ti 2 O 7 (LTO), would allow sensors to operate across a broad temperature range. The crystalline orientation and piezoelectric coupling direction of LTO thin films can be controlled by epitaxial matching to SrTiO 3 (001), SrTiO 3 (110), and rutile TiO 2 (110) substrates via pulsed laser deposition. The structure and phase purity of the films are investigated by x-ray diffraction and scanning transmission electron microscopy. Piezoresponse force microscopy is used to measure the in-plane and out-of-plane piezoelectric coupling in the films. The strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO 2 (110) results in epitaxial La 2/3 TiO 3 , an orthorhombic perovskite of interest as a microwave dielectric material and an ion conductor. La 2/3 TiO 3 can be difficult to stabilize in bulk form, and epitaxial stabilization on TiO 2 (110) is a promising route to realize La 2/3 TiO 3 for both fundamental studies and device applications. Overall, these results confirm that control of the crystalline orientation of epitaxial LTO-based materials can govern the resulting functional properties.

Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

2008-03-15

Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

Propensity rules for orientation in singly-charged ion-atom collisions

International Nuclear Information System (INIS)

Nielsen, S.E.; Dubois, A.; Hansen, J.P.

1990-01-01

Orientation effects for electron capture and excitation in singly-charged ion-atom collisions are analysed using the atomic basis impact parameter method with full inclusion of electron translational factors. We find that the orientation preferences previously predicted for excitation in terms of propensity rules may still be observed when capture is present in ion-atom collisions. Furthermore, in spite of intricate behaviour of the direct capture couplings during the collision, we draw some parallel conclusions for the orientation of the capture states. We illustrate these perturbative predictions by close-coupling calculations for H + -Na(3s) collisions where clear propensity for orientation of the H(2p) capture state is demonstrated in impact parameter and velocity dependences. Finally we predict pronounced orientation effects for H(2s) and H(2p) capture in collisions of H + with initially oriented Na(3p) states. (author)

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

International Nuclear Information System (INIS)

Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

2011-01-01

GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

Strength and deformation of shocked diamond single crystals: Orientation dependence

Science.gov (United States)

Lang, J. M.; Winey, J. M.; Gupta, Y. M.

2018-03-01

Understanding and quantifying the strength or elastic limit of diamond single crystals is of considerable scientific and technological importance, and has been a subject of long standing theoretical and experimental interest. To examine the effect of crystalline anisotropy on strength and deformation of shocked diamond single crystals, plate impact experiments were conducted to measure wave profiles at various elastic impact stresses up to ˜120 GPa along [110] and [111] crystal orientations. Using laser interferometry, particle velocity histories and shock velocities in the diamond samples were measured and were compared with similar measurements published previously for shock compression along the [100] direction. Wave profiles for all three orientations showed large elastic wave amplitudes followed by time-dependent inelastic deformation. From the measured wave profiles, the elastic limits were determined under well characterized uniaxial strain loading conditions. The measured elastic wave amplitudes for the [110] and [111] orientations were lower for higher elastic impact stress (stress attained for an elastic diamond response), consistent with the result reported previously for [100] diamond. The maximum resolved shear stress (MRSS) on the {111}⟨110⟩ slip systems was determined for each orientation, revealing significant orientation dependence. The MRSS values for the [100] and [110] orientations (˜33 GPa) are 25%-30% of theoretical estimates; the MRSS value for the [111] orientation is significantly lower (˜23 GPa). Our results demonstrate that the MRSS depends strongly on the stress component normal to the {111} planes or the resolved normal stress (RNS), suggesting that the RNS plays a key role in inhibiting the onset of inelastic deformation. Lower elastic wave amplitudes at higher peak stress and the effect of the RNS are inconsistent with typical dislocation slip mechanisms of inelastic deformation, suggesting instead an inelastic response

Laser molecular beam epitaxy of ZnO thin films and heterostructures

International Nuclear Information System (INIS)

Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

2014-01-01

We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

KAUST Repository

Wan, Yi

2017-12-19

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

KAUST Repository

Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun

2017-01-01

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.

Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

Science.gov (United States)

Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

2018-05-01

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

High temperature tribological performance of CrAlYN/CrN nanoscale multilayer coatings deposited on ?-TiAl

OpenAIRE

Walker, J.C.; Ross, I.M.; Reinhard, C.; Rainforth, W.M.; Hovsepian, P.Eh.

2009-01-01

This paper details the effect of temperature on the frictional behaviour of highly novel CrAlYN/CrN multilayer coatings, deposited by High Power Impulse Magnetron Sputtering (HIPIMS) on a Titanium Aluminide alloy used as fan blade material in the aerospace and a turbo-charger wheel in the automotive industries. The work was the first to discover the high temperature oxide 'glaze' layer formation which occurred on CrN multilayer-type coatings at higher temperatures and has received significant...

Epitaxial growth and control of the sodium content in Na{sub x}CoO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Sandra; Komissinskiy, Philipp [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Major, Marton [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); WIGNER RCP, RMKI, H-1525 Budapest, P.O.B. 49 (Hungary); Donner, Wolfgang [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Alff, Lambert, E-mail: alff@oxide.tu-darmstadt.de [Institute for Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2013-10-31

Single-phase c-axis oriented Na{sub x}CoO{sub 2} thin films were grown on (001) SrTiO{sub 3} single-crystal substrates, using pulsed laser deposition. X-ray diffraction analysis indicates the epitaxial growth of Na{sub x}CoO{sub 2} thin films in two domains, rotated in-plane by 15 and 45 degrees relative to [100] SrTiO{sub 3}. The sodium stoichiometry x of the films can be controlled in a range of 0.38 < x < 0.84 by in-situ post-deposition annealing the Na{sub x}CoO{sub 2} films at 720 – 760 °C in oxygen for 10 – 30 min. γ - Na{sub x}CoO{sub 2} films are obtained with a full width at half maximum of the (002) Na{sub x}CoO{sub 2} rocking curve below 0.2 degrees. The post-deposition annealing can substitute commonly used chemical deintercalation of Na which is typically associated with a loss in crystallinity. - Highlights: • Single phase Na{sub x}CoO{sub 2} thin films grown by pulsed laser deposition • Epitaxial relations of Na{sub x}CoO{sub 2} thin films on (001) SrTiO{sub 3} substrates • Multi-domain thin films • Control of sodium content by in-situ annealing of Na{sub x}CoO{sub 2} thin films.

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Formation of oriented nitrides by N+ ion implantation in iron single crystals

International Nuclear Information System (INIS)

Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.

2014-01-01

Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N

Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

Energy Technology Data Exchange (ETDEWEB)

Kaspar, Tiffany C.; Hong, Seungbum; Bowden, Mark E.; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R.; Comes, Ryan B.; Ramuhalli, Pradeep; Henager, Charles H.

2018-02-14

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-ray diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Epitaxy physical principles and technical implementation

CERN Document Server

Herman, Marian A; Sitter, Helmut

2004-01-01

Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Isobe, Shigehito [Creative Research Institution, Hokkaido University, Sapporo 001-0021 (Japan); Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Orimo, Shin-ichi [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Isobe, Shigehito; Kuwano, Hiroki; Shiraki, Susumu; Hitosugi, Taro; Orimo, Shin-ichi

2015-01-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10 −2 Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R RMS of ∼0.4 nm

Microstructure of epitaxial thin films of the ferromagnetic shape memory alloy Ni{sub 2}MnGa

Energy Technology Data Exchange (ETDEWEB)

Eichhorn, Tobias

2011-12-09

This work is concerned with the preparation and detailed characterization of epitaxial thin films of the Heusler compound Ni{sub 2}MnGa. This multiferroic compound is of both technological and scientific interest due to the outstanding magnetic shape memory (MSM) behavior. Huge magnetic-field-induced strains up to 10 % have been observed for single crystals close to a Ni{sub 2}MnGa composition. The effect is based on a redistribution of crystallographic twin variants of tetragonal or orthorhombic symmetry. Under the driving force of the external magnetic field twin boundaries can move through the crystal, which largely affects the macroscopic shape. The unique combination of large reversible strain, high switching frequency and high work output makes the alloy a promising actuator material. Since the MSM effect results from an intrinsic mechanism, MSM devices possess great potential for implementation in microsystems, e.g. microfluidics. So far significant strains, in response to an external magnetic field, have been observed for bulk single crystals and foams solely. In order to take advantage of the effect in applications concepts for miniaturization are needed. The rather direct approach, based on epitaxial thin films, is explored in the course of this work. This involves sample preparation under optimized deposition parameters and fabrication of freestanding single-crystalline films. Different methods to achieve freestanding microstructures such as bridges and cantilevers are presented. The complex crystal structure is extensively studied by means of X-ray diffraction. Thus, the different crystallographic twin variants that are of great importance for the MSM effect are identified. In combination with microscopy the twinning architecture for films of different crystallographic orientation is clarified. Intrinsic blocking effects in samples of (100) orientation are explained on basis of the variant configuration. In contrast, a promising twinning microstructure

Self-assembled single-phase perovskite nanocomposite thin films.

Science.gov (United States)

Kim, Hyun-Suk; Bi, Lei; Paik, Hanjong; Yang, Dae-Jin; Park, Yun Chang; Dionne, Gerald F; Ross, Caroline A

2010-02-10

Thin films of perovskite-structured oxides with general formula ABO(3) have great potential in electronic devices because of their unique properties, which include the high dielectric constant of titanates, (1) high-T(C) superconductivity in cuprates, (2) and colossal magnetoresistance in manganites. (3) These properties are intimately dependent on, and can therefore be tailored by, the microstructure, orientation, and strain state of the film. Here, we demonstrate the growth of cubic Sr(Ti,Fe)O(3) (STF) films with an unusual self-assembled nanocomposite microstructure consisting of (100) and (110)-oriented crystals, both of which grow epitaxially with respect to the Si substrate and which are therefore homoepitaxial with each other. These structures differ from previously reported self-assembled oxide nanocomposites, which consist either of two different materials (4-7) or of single-phase distorted-cubic materials that exhibit two or more variants. (8-12) Moreover, an epitaxial nanocomposite SrTiO(3) overlayer can be grown on the STF, extending the range of compositions over which this microstructure can be formed. This offers the potential for the implementation of self-organized optical/ferromagnetic or ferromagnetic/ferroelectric hybrid nanostructures integrated on technologically important Si substrates with applications in magnetooptical or spintronic devices.

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

NARCIS (Netherlands)

Bayraktar, Muharrem; Chopra, A.; Bijkerk, Frederik; Rijnders, Augustinus J.H.M.

2014-01-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Directory of Open Access Journals (Sweden)

Sangmo Koo

2016-09-01

Full Text Available The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100 and (110 orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D structure.

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Directory of Open Access Journals (Sweden)

Kurmashev Sh. D.

2014-12-01

Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Variation in orgasm occurrence by sexual orientation in a sample of U.S. singles.

Science.gov (United States)

Garcia, Justin R; Lloyd, Elisabeth A; Wallen, Kim; Fisher, Helen E

2014-11-01

Despite recent advances in understanding orgasm variation, little is known about ways in which sexual orientation is associated with men's and women's orgasm occurrence. To assess orgasm occurrence during sexual activity across sexual orientation categories. Data were collected by Internet questionnaire from 6,151 men and women (ages 21-65+ years) as part of a nationally representative sample of single individuals in the United States. Analyses were restricted to a subsample of 2,850 singles (1,497 men, 1,353 women) who had experienced sexual activity in the past 12 months. Participants reported their sex/gender, self-identified sexual orientation (heterosexual, gay/lesbian, bisexual), and what percentage of the time they experience orgasm when having sex with a familiar partner. Mean occurrence rate for experiencing orgasm during sexual activity with a familiar partner was 62.9% among single women and 85.1% among single men, which was significantly different (F1,2848  = 370.6, P sexual orientation: heterosexual men 85.5%, gay men 84.7%, bisexual men 77.6% (F2,1494  = 2.67, P = 0.07, η(2)  = 0.004). For women, however, mean occurrence rate of orgasm varied significantly by sexual orientation: heterosexual women 61.6%, lesbian women 74.7%, bisexual women 58.0% (F2,1350  = 10.95, P sexual orientation, have less predictable, more varied orgasm experiences than do men and that for women, but not men, the likelihood of orgasm varies with sexual orientation. These findings demonstrate the need for further investigations into the comparative sexual experiences and sexual health outcomes of sexual minorities. © 2014 International Society for Sexual Medicine.

Spin-dependent transport in epitaxial Fe wires on GaAs(110); Spinabhaengiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)

Energy Technology Data Exchange (ETDEWEB)

Hassel, Christoph

2009-08-11

In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at

Deformation Mechanism and Recrystallization Relationships in Galfenol Single Crystals: On the Origin of Goss and Cube Orientations

Science.gov (United States)

Na, Suok-Min; Smith, Malcolm; Flatau, Alison B.

2018-06-01

In this work, deformation mechanism related to recrystallization behavior in single-crystal disks of Galfenol (Fe-Ga alloy) was investigated to gain insights into the influence of crystal orientations on structural changes and selective grain growth that take place during secondary recrystallization. We started with the three kinds of single-crystal samples with (011)[100], (001)[100], and (001)[110] orientations, which were rolled and annealed to promote the formation of different grain structures and texture evolutions. The initial Goss-oriented (011)[100] crystal mostly rotated into {111} orientations with twofold symmetry and shear band structures by twinning resulted in the exposure of rolled surface along {001} orientation during rolling. In contrast, the Cube-oriented (001)[100] single crystal had no change in texture during rolling with the thickness reduction up to 50 pct. The {123} slip systems were preferentially activated in these single crystals during deformation as well as {112} slip systems that are known to play a role in primary slip of body-centered cubic (BCC) materials such as α-iron and Fe-Si alloys. After annealing, the deformed Cube-oriented single crystal had a small fraction ( orientation, associated with {123} slip systems as well. This was expected to provide potential sites of nucleation for secondary recrystallization; however, no Goss- and Cube-oriented components actually developed in this sample during secondary recrystallization. Those results illustrated how the recrystallization behavior can be influenced by deformed structure and the slip systems.

Multiple growths of epitaxial lift-off solar cells from a single InP substrate

International Nuclear Information System (INIS)

Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

2010-01-01

We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

Optimal numerical methods for determining the orientation averages of single-scattering properties of atmospheric ice crystals

International Nuclear Information System (INIS)

Um, Junshik; McFarquhar, Greg M.

2013-01-01

The optimal orientation averaging scheme (regular lattice grid scheme or quasi Monte Carlo (QMC) method), the minimum number of orientations, and the corresponding computing time required to calculate the average single-scattering properties (i.e., asymmetry parameter (g), single-scattering albedo (ω o ), extinction efficiency (Q ext ), scattering efficiency (Q sca ), absorption efficiency (Q abs ), and scattering phase function at scattering angles of 90° (P 11 (90°)), and 180° (P 11 (180°))) within a predefined accuracy level (i.e., 1.0%) were determined for four different nonspherical atmospheric ice crystal models (Gaussian random sphere, droxtal, budding Bucky ball, and column) with maximum dimension D=10μm using the Amsterdam discrete dipole approximation at λ=0.55, 3.78, and 11.0μm. The QMC required fewer orientations and less computing time than the lattice grid. The calculations of P 11 (90°) and P 11 (180°) required more orientations than the calculations of integrated scattering properties (i.e., g, ω o , Q ext , Q sca , and Q abs ) regardless of the orientation average scheme. The fewest orientations were required for calculating g and ω o . The minimum number of orientations and the corresponding computing time for single-scattering calculations decreased with an increase of wavelength, whereas they increased with the surface-area ratio that defines particle nonsphericity. -- Highlights: •The number of orientations required to calculate the average single-scattering properties of nonspherical ice crystals is investigated. •Single-scattering properties of ice crystals are calculated using ADDA. •Quasi Monte Carlo method is more efficient than lattice grid method for scattering calculations. •Single-scattering properties of ice crystals depend on a newly defined parameter called surface area ratio

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Two-motor single-inverter field-oriented induction machine drive ...

Indian Academy of Sciences (India)

Multi-machine, single-inverter induction motor drives are attractive in situations in which all machines are of similar ratings, and operate at approximately the same load torques. The advantages include small size compared to multi-inverter system, lower weight and overall cost. However, field oriented control of such drives ...

Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

International Nuclear Information System (INIS)

Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

2015-01-01

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

Preparation of YBa2Cu3O7-δ epitaxial thin films by pulsed ion-beam evaporation

International Nuclear Information System (INIS)

Sorasit, S.; Yoshida, G.; Suzuki, T.; Suematsu, H.; Jiang, W.; Yatsui, K.

2001-01-01

Thin films of YBa 2 Cu 3 O 7-δ (Y-123) grown epitaxially have been successfully deposited by ion-beam evaporation (IBE). The c-axis oriented YBa 2 Cu 3 O 7-δ thin films were successfully deposited on MgO and SrTiO 3 substrates. The Y-123 thin films which were prepared on the SrTiO 3 substrates were confirmed to be epitaxially grown, by X-ray diffraction analysis. The instantaneous deposition rate of the Y-123 thin films was estimated as high as 4 mm/s. (author)

New insights into microstructural evolution of epitaxial Ni-Mn-Ga films on MgO (1 0 0) substrate by high-resolution X-ray diffraction and orientation imaging investigations

Science.gov (United States)

Sharma, Amit; Mohan, Sangeneni; Suwas, Satyam

2018-04-01

In this work, a detailed investigation has been performed on hetero-epitaxial growth and microstructural evolution in highly oriented Ni-Mn-Ga (1 0 0) films grown on MgO (1 0 0) substrate using high-resolution X-ray diffraction and orientation imaging microscopy. Mosaicity of the films has been analysed in terms of tilt angle, twist angle, lateral and vertical coherence length and threading dislocation densities by performing rocking curve measurements and reciprocal space mapping. Density of edge dislocations is found to be an order of magnitude higher than the density of screw dislocations, irrespective of film thickness. X-ray pole figure measurements have revealed an orientation relationship of ? || (1 0 0)MgO; ? || [0 0 1]MgO between the film and substrate. Microstructure predicted by X-ray diffraction is in agreement with that obtained from electron microscopy and atomic force microscopy. The evolution of microstructure in the film with increasing thickness has been explained vis-à-vis dislocation generation and growth mechanisms. Orientation imaging microscopy observations indicate evolutionary growth of film by overgrowth mechanism. Decrease in coercivity with film thickness has been explained as an interplay between stress field developed due to crystal defects and magnetic domain pinning due to surface roughness.

Crystallography and Growth of Epitaxial Oxide Films for Fundamental Studies of Cathode Materials Used in Advanced Li-Ion Batteries

Directory of Open Access Journals (Sweden)

Leonid A. Bendersky

2017-05-01

Full Text Available Li-ion battery systems, synthesized as epitaxial thin films, can provide powerful insights into their electrochemical processes. Crystallographic analysis shows that many important cathode oxides have an underlying similarity: their structures can be considered as different ordering schemes of Li and transition metal ions within a pseudo-cubic sublattice of oxygen anions arranged in a face-center cubic (FCC fashion. This oxygen sublattice is compatible with SrTiO3 and similar perovskite oxides, thus perovskites can be used as supporting substrates for growing epitaxial cathode films. The predicted epitaxial growth and crystallographic relations were experimentally verified for different oxide films deposited by pulsed laser deposition (PLD on SrTiO3 or SrRuO3/SrTiO3 of different orientations. The results based on cross-sectional high-resolution TEM of the following films are presented in the paper: (a trigonal LiCoO2; (b orthorhombic LiMnO2; (c monoclinic Li2MnO3; (d compositionally-complex monoclinic Li1.2Mn0.55Ni0.15Co0.1O2. All results demonstrated the feasibility of epitaxial growth for these materials, with the growth following the predicted cube-on-cube orientation relationship between the cubic and pseudo-cubic oxygen sublattices of a substrate and a film, respectively.

Complex Nanostructures by Pulsed Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Noboyuki Koguchi

2011-06-01

Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

Low-temperature epitaxy of silicon by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

2007-07-16

In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

KAUST Repository

Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

2013-01-01

Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

KAUST Repository

Lee, Dongkyu

2013-09-19

Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials.

Science.gov (United States)

Jang, Seon-Min; Yang, Su Chul

2018-06-08

Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO 2 epitaxial growth and BaTiO 3 conversion. Through the TiO 2 epitaxial growth on FTO substrate, (001) oriented TiO 2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO 2 NBA was conducted to enlarge the surface area for effective Ba 2+ ion diffusion during the perovskite conversion process from TiO 2 to BaTiO 3 . The final structure of perovskite BaTiO 3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO 3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials

Science.gov (United States)

Jang, Seon-Min; Yang, Su Chul

2018-06-01

Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO2 epitaxial growth and BaTiO3 conversion. Through the TiO2 epitaxial growth on FTO substrate, (001) oriented TiO2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO2 NBA was conducted to enlarge the surface area for effective Ba2+ ion diffusion during the perovskite conversion process from TiO2 to BaTiO3. The final structure of perovskite BaTiO3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

Epitaxial growth of hybrid nanostructures

Science.gov (United States)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

Science.gov (United States)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Spall behaviour of single crystal aluminium at three principal orientations

Science.gov (United States)

Owen, G. D.; Chapman, D. J.; Whiteman, G.; Stirk, S. M.; Millett, J. C. F.; Johnson, S.

2017-10-01

A series of plate impact experiments have been conducted to study the spall strength of the three principal crystallographic orientations of single crystal aluminium ([100], [110] and, [111]) and ultra-pure polycrystalline aluminium. The samples have been shock loaded at two impact stresses (4 GPa and 10 GPa). Significant differences have been observed in the elastic behaviour, the pullback velocities, and the general shape of the wave profiles, which can be accounted for by considerations of the microscale homogeneity, the dislocation density, and the absence of grain boundaries in the single crystal materials. The data have shown that there is a consistent order of spall strength measured for the four sample materials. The [111] orientation has the largest spall strength and elastic limit, followed closely by [110], [100], and then the polycrystalline material. This order is consistent with both quasi-static data and geometrical consideration of Schmid factors.

Single molecule optical measurements of orientation and rotations of biological macromolecules.

Science.gov (United States)

Shroder, Deborah Y; Lippert, Lisa G; Goldman, Yale E

2016-11-22

Subdomains of macromolecules often undergo large orientation changes during their catalytic cycles that are essential for their activity. Tracking these rearrangements in real time opens a powerful window into the link between protein structure and functional output. Site-specific labeling of individual molecules with polarized optical probes and measurement of their spatial orientation can give insight into the crucial conformational changes, dynamics, and fluctuations of macromolecules. Here we describe the range of single molecule optical technologies that can extract orientation information from these probes, review the relevant types of probes and labeling techniques, and highlight the advantages and disadvantages of these technologies for addressing specific inquiries.

Preparation of ZnO:N films by radical beam gettering epitaxy

International Nuclear Information System (INIS)

Rogozin, I. V.

2007-01-01

ZnO:N epitaxial films are obtained by radical beam gettering epitaxy. The properties of the films are studied using X-ray diffraction, atomic-force microscopy, secondary-ion mass spectroscopy, and photoluminescence. A narrow (002) peak is observed in the X-ray diffraction spectra, which indicates that the ZnO:N films are oriented along the c axis. Secondary-ion mass spectroscopy indicates that N is present in the ZnO films. In the low-energy luminescence spectrum of the ZnO:N films, a peak at 3.31 eV is observed. This peak is presumably attributed to the exciton bound at the neutral acceptor N O . The postannealing of the ZnO:N films was carried out in atomic oxygen. The nature of the donor-acceptor (3.23 eV) and green (2.56 eV) luminescence bands is discussed

Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

KAUST Repository

Chernikova, Valeriya; Shekhah, Osama; Eddaoudi, Mohamed

2016-01-01

Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method

Orientational imaging of a single plasmonic nanoparticle using dark-field hyperspectral imaging

Science.gov (United States)

Mehta, Nishir; Mahigir, Amirreza; Veronis, Georgios; Gartia, Manas Ranjan

2017-08-01

Orientation of plasmonic nanostructures is an important feature in many nanoscale applications such as catalyst, biosensors DNA interactions, protein detections, hotspot of surface enhanced Raman spectroscopy (SERS), and fluorescence resonant energy transfer (FRET) experiments. However, due to diffraction limit, it is challenging to obtain the exact orientation of the nanostructure using standard optical microscope. Hyperspectral Imaging Microscopy is a state-of-the-art visualization technology that combines modern optics with hyperspectral imaging and computer system to provide the identification and quantitative spectral analysis of nano- and microscale structures. In this work, initially we use transmitted dark field imaging technique to locate single nanoparticle on a glass substrate. Then we employ hyperspectral imaging technique at the same spot to investigate orientation of single nanoparticle. No special tagging or staining of nanoparticle has been done, as more likely required in traditional microscopy techniques. Different orientations have been identified by carefully understanding and calibrating shift in spectral response from each different orientations of similar sized nanoparticles. Wavelengths recorded are between 300 nm to 900 nm. The orientations measured by hyperspectral microscopy was validated using finite difference time domain (FDTD) electrodynamics calculations and scanning electron microscopy (SEM) analysis. The combination of high resolution nanometer-scale imaging techniques and the modern numerical modeling capacities thus enables a meaningful advance in our knowledge of manipulating and fabricating shaped nanostructures. This work will advance our understanding of the behavior of small nanoparticle clusters useful for sensing, nanomedicine, and surface sciences.

Microwave single-scattering properties of randomly oriented soft-ice hydrometeors

Directory of Open Access Journals (Sweden)

D. Casella

2008-11-01

Full Text Available Large ice hydrometeors are usually present in intense convective clouds and may significantly affect the upwelling radiances that are measured by satellite-borne microwave radiometers – especially, at millimeter-wavelength frequencies. Thus, interpretation of these measurements (e.g., for precipitation retrieval requires knowledge of the single scattering properties of ice particles. On the other hand, shape and internal structure of these particles (especially, the larger ones is very complex and variable, and therefore it is necessary to resort to simplifying assumptions in order to compute their single-scattering parameters.

In this study, we use the discrete dipole approximation (DDA to compute the absorption and scattering efficiencies and the asymmetry factor of two kinds of quasi-spherical and non-homogeneous soft-ice particles in the frequency range 50–183 GHz. Particles of the first kind are modeled as quasi-spherical ice particles having randomly distributed spherical air inclusions. Particles of the second kind are modeled as random aggregates of ice spheres having random radii. In both cases, particle densities and dimensions are coherent with the snow hydrometeor category that is utilized by the University of Wisconsin – Non-hydrostatic Modeling System (UW-NMS cloud-mesoscale model. Then, we compare our single-scattering results for randomly-oriented soft-ice hydrometeors with corresponding ones that make use of: a effective-medium equivalent spheres, b solid-ice equivalent spheres, and c randomly-oriented aggregates of ice cylinders. Finally, we extend to our particles the scattering formulas that have been developed by other authors for randomly-oriented aggregates of ice cylinders.

Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

International Nuclear Information System (INIS)

Noda, Takeshi; Mano, Takaaki

2008-01-01

An InAs ring structure accompanying the formation of quantum dots (QDs) was fabricated on (1 0 0)GaAs using droplet epitaxy. The QDs were located in the vicinity of the ring, due to the diffusion of In atoms from the In droplets. In addition, the dots were found to have distributed elliptically and preferentially along the [0 1 1] direction, implying that In itself prefers to diffuse along the [0 1 1] direction, which is the opposite of the favorable diffusion orientation of group III atoms on (1 0 0)GaAs under a commonly used As-stabilized growth condition. This is the first observation of a ring structure accompanying the formation of quantum dots in droplet epitaxy

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Science.gov (United States)

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

2014-01-01

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Energy Technology Data Exchange (ETDEWEB)

Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

2014-01-30

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Conductivity of epitaxial and CVD graphene with correlated line defects

DEFF Research Database (Denmark)

Radchenko, T. M.; Shylau, Artsem; Zozoulenko, I. V.

2014-01-01

Transport properties of single-layer graphene with correlated one-dimensional defects are studied theoretically using the computational model within the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and steps due...

Molecular beam epitaxy of single crystal colossal magnetoresistive material

International Nuclear Information System (INIS)

Eckstein, J.N.; Bozovic, I.; Rzchowski, M.; O'Donnell, J.; Hinaus, B.; Onellion, M.

1996-01-01

The authors have grown films of (LaSr)MnO 3 (LSMO) and (LaCa)MnO 3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T -1

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

2010-01-01

We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

Science.gov (United States)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals

CERN Document Server

Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.

2005-01-01

The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

International Nuclear Information System (INIS)

Yugov, A. A.; Malahov, S. S.; Donskov, A. A.; Duhnovskii, M. P.; Knyazev, S. N.; Kozlova, Yu. P.; Yugova, T. G.; Belogorokhov, I. A.

2016-01-01

The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al_2O_3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN epitaxial layer self-separation from the substrate is revealed. The titanium-nanolayer thickness at which thick GaN layer is reproducibly self-separated is within 20–40 nm.

Continuous epitaxial growth of extremely strong Cu6Sn5 textures at liquid-Sn/(111)Cu interface under temperature gradient

Science.gov (United States)

Zhong, Y.; Zhao, N.; Liu, C. Y.; Dong, W.; Qiao, Y. Y.; Wang, Y. P.; Ma, H. T.

2017-11-01

As the diameter of solder interconnects in three-dimensional integrated circuits (3D ICs) downsizes to several microns, how to achieve a uniform microstructure with thousands of interconnects on stacking chips becomes a critical issue in 3D IC manufacturing. We report a promising way for fabricating fully intermetallic interconnects with a regular grain morphology and a strong texture feature by soldering single crystal (111) Cu/Sn/polycrystalline Cu interconnects under the temperature gradient. Continuous epitaxial growth of η-Cu6Sn5 at cold end liquid-Sn/(111)Cu interfaces has been demonstrated. The resultant η-Cu6Sn5 grains show faceted prism textures with an intersecting angle of 60° and highly preferred orientation with their ⟨ 11 2 ¯ 0 ⟩ directions nearly paralleling to the direction of the temperature gradient. These desirable textures are maintained even after soldering for 120 min. The results pave the way for controlling the morphology and orientation of interfacial intermetallics in 3D packaging technologies.

Interdiffusion in epitaxial, single-crystalline Au/Ag thin films studied by Auger electron spectroscopy sputter-depth profiling and positron annihilation

International Nuclear Information System (INIS)

Noah, Martin A.; Flötotto, David; Wang, Zumin; Reiner, Markus; Hugenschmidt, Christoph; Mittemeijer, Eric J.

2016-01-01

Interdiffusion in epitaxial, single-crystalline Au/Ag bilayered thin films on Si (001) substrates was investigated by Auger electron spectroscopy (AES) sputter-depth profiling and by in-situ positron annihilation Doppler broadening spectroscopy (DBS). By the combination of these techniques identification of the role of vacancy sources and sinks on interdiffusion in the Au/Ag films was possible. It was found that with precise knowledge of the concentration-dependent self-diffusion and impurity diffusion coefficients a distinction between the Darken-Manning treatment and Nernst-Planck treatment can be made, which is not possible on the basis of the determined concentration-depth profiles alone.

Formation of defect-fluorite structured NdNiOxHy epitaxial thin films via a soft chemical route from NdNiO3 precursors.

Science.gov (United States)

Onozuka, T; Chikamatsu, A; Katayama, T; Fukumura, T; Hasegawa, T

2016-07-26

A new phase of oxyhydride NdNiOxHy with a defect-fluorite structure was obtained by a soft chemical reaction of NdNiO3 epitaxial thin films on a substrate of SrTiO3 (100) with CaH2. The epitaxial relationship of this phase relative to SrTiO3 could be controlled by changing the reaction temperature. At 240 °C, NdNiOxHy grew with a [001] orientation, forming a thin layer of infinite-layer NdNiO2 at the interface between the NdNiOxHy and the substrate. Meanwhile, a high-temperature reaction at 400 °C formed [110]-oriented NdNiOxHy without NdNiO2.

Control growth of silicon nanocolumns' epitaxy on silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

2013-04-15

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial growth of mixed conducting layered Ruddlesden–Popper La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) phases by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J., E-mail: s.skinner@imperial.ac.uk

2013-10-15

Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO{sub 3} and NdGaO{sub 3} substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) have been epitaxially grown on SrTiO{sub 3} (0 0 1) or NdGaO{sub 3} (1 1 0) single crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time.

Orientation effect on recovery and recrystallization of cold rolled niobium single crystals

Energy Technology Data Exchange (ETDEWEB)

Srinivasan, R. [Center for Accelerated Maturation of Materials, Department of Materials Science and Engineering, Ohio State University, Columbus, OH 43210 (United States)], E-mail: rajagopalan.5@osu.edu; Viswanathan, G.B.; Levit, V.I.; Fraser, H.L. [Center for Accelerated Maturation of Materials, Department of Materials Science and Engineering, Ohio State University, Columbus, OH 43210 (United States)

2009-05-15

Single crystal sheets of niobium with initial orientations of (0 0 1) [11-bar0], (1 1 0) [11-bar 0] and (1 1 1) [11-bar0] were rolled at room temperature in the strain range of 25-50%. The deformed specimens were vacuum annealed at temperatures of 800 deg. C, 1000 deg. C, and 1200 deg. C for 3 h. TEM, SEM-OIM and optical microscopy revealed orientation stability in (0 0 1) and (1 1 0) rolled samples with no recrystallization observed after annealing. Samples rolled along (1 1 1) partially recrystallized after annealing at 1000 deg. C and 1200 deg. C. A relatively small increase was observed in hardness of (0 0 1) rolled crystals between 25% and 50% strain, implying low work hardening rates. (1 1 1) rolled samples showed higher hardening rates, and enhanced recovery in hardness values after annealing, due to partial recrystallization. Conditions have been identified for the deformation and annealing of niobium single crystals, enabling the preservation of single crystal structure and near-complete recovery of mechanical properties. A simple crystallographic model is proposed, giving an explanation for the observed orientation stability in (0 0 1) and (1 1 0) rolled samples, and the tendency towards instability and recrystallization in (1 1 1) rolled samples.

Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy

International Nuclear Information System (INIS)

Pertsev, N A; Petraru, A; Kohlstedt, H; Waser, R; Bdikin, I K; Kiselev, D; Kholkin, A L

2008-01-01

Ferroelectric nanodomains were created in BaTiO 3 thin films by applying a voltage to a sharp conducting tip of a scanning force microscope (SFM). The films were epitaxially grown on SrRuO 3 -covered (001)-oriented SrTiO 3 substrates by a high-pressure sputtering. They appeared to be single-crystalline with the (001) crystallographic orientation relative to the substrate. Using the piezoresponse mode of the SFM to detect the out-of-plane film polarization, the domain sizes were measured as a function of the applied writing voltage and the pulse time. It was found that the time dependence of the domain diameter in a 60 nm thick BaTiO 3 film deviates significantly from the logarithmic law observed earlier in Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) films. At a given writing time, the domain size increases nonlinearly with increasing applied voltage, in contrast to the linear behavior reported earlier for PZT films and LiNbO 3 single crystals. The dynamics of domain growth is analyzed theoretically taking into account the strong inhomogeneity of the external electric field in the film and the influence of the bottom electrode. It is shown that the observed writing time and voltage dependences of the domain size can be explained by the domain-wall creep in the presence of random-bond disorder

Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties

KAUST Repository

Mi, Wenbo; Guo, Zaibing; Feng, X. P.; Bai, Haili

2013-01-01

Epitaxial γ′-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray θ-2θ and φ scans, pole figures and high-resolution transmission electron microscopy. The film surface

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

KAUST Repository

Pergolesi, Daniele

2015-02-01

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

Directory of Open Access Journals (Sweden)

C. C. Fan

2017-08-01

Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

Structural Studies of the Initial Stages of Fluoride Epitaxy on Silicon and GERMANIUM(111)

Science.gov (United States)

Denlinger, Jonathan David

lateral discommensuration of the overlayer for lattice mismatches of >5% relative to the substrate. XPD also reveals a transition from single - to mixed-domains of overlayer crystallographic orientation for mismatches >=3.5%.

Effects of seed orientation on the growth behavior of single grain REBCO bulk superconductors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hee Gyoun [Korea Polytechnic University, Siheung (Korea, Republic of)

2017-06-15

This study presents a simple method to control the seed orientation which leads to the various growth characteristics of a single grain REBCO (RE: rare-earth elements) bulk superconductors. Seed orientation was varied systematically from c-axis to a-axis with every 30 degree rotation around b-axis. Orientations of a REBCO single grain was successfully controlled by placing the seed with various angles on the prismatic indent prepared on the surface of REBCO powder compacts. Growth pattern was changed from cubic to rectangular when the seed orientation normal to compact surface was varied from c-axis to a-axis. Macroscopic shape change has been explained by the variation of the wetting angle of un-reacted melt depending on the interface energy between YBa2Cu3O7-y (Y123) grain and melt. Higher magnetic levitation force was obtained for the specimen prepared using tilted seed with an angle of 30 degree rotation around b-axis.

Fabrication of 5 cm long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer on textured Ni-5%W substrate for YBCO coated conductors via dip-coating PACSD method

Energy Technology Data Exchange (ETDEWEB)

Lei, M.; Wang, W.T.; Pu, M.H.; Yang, X.S.; He, L.J. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia); Zhao, Y., E-mail: yzhao@home.swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Science and Engineering, University of New South Wales, Sydney 2052, New South Wales (Australia)

2011-11-15

Epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} single buffer layer for YBCO coated conductors was deposited via fluorine-free dip-coating CSD. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by carefully controlling the processing. YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via CSD approach. Five centimeters long epitaxial Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer for YBCO coated conductors was deposited via dip-coating polymer-assisted chemical solution deposition (PACSD) approach on bi-axially textured Ni-5%W (2 0 0) alloy substrate. The film formation and texture evolution were investigated using X-ray diffraction and scanning electron microscopy. Flat, dense and crack-free SCO films with sharp (2 0 0) c-axis texture were obtained by way of carefully controlling the concentration of precursor solution, withdrawing speed, annealing temperature and dwelling time. On consideration of both microstructure and texture, epitaxial SCO single buffer layers were fabricated using precursor solution of 0.3 M cationic concentration, the withdrawing speed of 10 mm/min and heat treatment at 1100 deg. C in Ar-5%H{sub 2} mixture gas for 0.5 h. Epitaxial YBCO thin films with a homogeneous surface microstructure were deposited on the SCO-buffered NiW substrate via dip-coating PACSD approach. The PACSD approach was a promising way to fabricate long and low-cost YBCO coated conductors.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

2010-07-01

Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Jumpei, E-mail: higuchi@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Sato, Yoichi [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

2011-09-30

NiFe epitaxial films are prepared on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

International Nuclear Information System (INIS)

Higuchi, Jumpei; Ohtake, Mitsuru; Sato, Yoichi; Kirino, Fumiyoshi; Futamoto, Masaaki

2011-01-01

NiFe epitaxial films are prepared on Cr(211) bcc and Cr(100) bcc underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211) bcc and Cr(100) bcc underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Sub-monolayer growth of titanium, cobalt, and palladium on epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Sokolova, Anastasia; Kilchert, Franziska; Schneider, M. Alexander [Lehrstuhl fuer Festkoerperphysik, Friedrich-Alexander Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Link, Stefan; Stoehr, Alexander; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2017-11-15

We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene on SiC(0001) and studied the early stages of growth in the sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three metals do not wet the substrate and Ostwalt ripening occurs at temperatures below 400 K. The analysis of the epitaxial orientation of the metal adislands revealed their specific alignment to the graphene lattice. It is found that the apparent height of the islands as measured by STM strongly deviates from their true topographic height. This is interpreted as an indication of the presence of scattering processes within the metal particles that increase the transparency of the metal-graphene interface for electrons. Even large islands are easily picked up by the tip of the STM allowing insight into the bonding between metal island and graphene surface and into mechanisms leading to metal intercalation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

Energy Technology Data Exchange (ETDEWEB)

Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

2015-02-01

Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

International Nuclear Information System (INIS)

Ma, Chunrui; Wu, Judy; Ma, Beihai; Mi, Shao-Bo; Liu, Ming

2014-01-01

High quality c-axis oriented epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films were fabricated using pulsed laser deposition on (001) LaAlO 3 substrates with conductive LaNiO 3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

Science.gov (United States)

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

As-free pnictide LaNi{sub 1-x}Sb{sub 2} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

2012-07-01

We use reactive molecular beam epitaxy (RMBE) as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaNi{sub 1-x}Sb{sub 2} were grown on (100)MgO substrates from elemental sources by simultaneous evaporation of high purity La, Ni and Sb metals by e-gun. The LaNi{sub 1-x}Sb{sub 2} thin films grow epitaxially and are (00l) oriented with high crystalline quality, as evident from RHEED and X-Ray diffraction studies. The Ni deficient LaNi{sub 1-x}Sb{sub 2} thin films show metallic behavior with a room temperature resistivity of 110 {mu}{Omega} cm, while the stoichiometric compound is a semiconductor/insulator. The isostructural compound with Bi as pnictide shows a superconducting transition with a T{sub C}(0) of 3.1 K.

Single Molecule 3D Orientation in Time and Space: A 6D Dynamic Study on Fluorescently Labeled Lipid Membranes

DEFF Research Database (Denmark)

Börner, Richard; Ehrlich, Nicky; Hohlbein, Johannes

2016-01-01

Interactions between single molecules profoundly depend on their mutual three-dimensional orientation. Recently, we demonstrated a technique that allows for orientation determination of single dipole emitters using a polarization-resolved distribution of fluorescence into several detection channels...... interesting in non-isotropic environments such as lipid membranes, which are of great importance in biology. We used giant unilamellar vesicles (GUVs) labeled with fluorescent dyes down to a single molecule concentration as a model system for both, assessing the robustness of the orientation determination...

Epitaxy of Polar Oxides and Semiconductors

Science.gov (United States)

Shelton, Christopher Tyrel

Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some

Three-dimensional orientation-unlimited polarization encryption by a single optically configured vectorial beam.

Science.gov (United States)

Li, Xiangping; Lan, Tzu-Hsiang; Tien, Chung-Hao; Gu, Min

2012-01-01

The interplay between light polarization and matter is the basis of many fundamental physical processes and applications. However, the electromagnetic wave nature of light in free space sets a fundamental limit on the three-dimensional polarization orientation of a light beam. Although a high numerical aperture objective can be used to bend the wavefront of a radially polarized beam to generate the longitudinal polarization state in the focal volume, the arbitrary three-dimensional polarization orientation of a beam has not been achieved yet. Here we present a novel technique for generating arbitrary three-dimensional polarization orientation by a single optically configured vectorial beam. As a consequence, by applying this technique to gold nanorods, orientation-unlimited polarization encryption with ultra-security is demonstrated. These results represent a new landmark of the orientation-unlimited three-dimensional polarization control of the light-matter interaction.

Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

International Nuclear Information System (INIS)

Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

2013-01-01

SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Wiedwald, Ulf [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg (Germany)

2014-01-14

FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

Fabrication of single-crystalline plasmonic nanostructures on transparent and flexible amorphous substrates

Science.gov (United States)

Mori, Tomohiro; Mori, Takeshi; Tanaka, Yasuhiro; Suzaki, Yoshifumi; Yamaguchi, Kenzo

2017-02-01

A new experimental technique is developed for producing a high-performance single-crystalline Ag nanostructure on transparent and flexible amorphous substrates for use in plasmonic sensors and circuit components. This technique is based on the epitaxial growth of Ag on a (001)-oriented single-crystalline NaCl substrate, which is subsequently dissolved in ultrapure water to allow the Ag film to be transferred onto a wide range of different substrates. Focused ion beam milling is then used to create an Ag nanoarray structure consisting of 200 cuboid nanoparticles with a side length of 160 nm and sharp, precise edges. This array exhibits a strong signal and a sharp peak in plasmonic properties and Raman intensity when compared with a polycrystalline Ag nanoarray.

Growth of n-alkane films on a single-crystal substrate

DEFF Research Database (Denmark)

Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

2001-01-01

The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

Characterization of bicrystalline epitaxial LaNiO{sub 3} films fabricated on MgO (1 0 0) substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng Liang [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Zhu Jun [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)]. E-mail: junzhu@uestc.edu.cn; Zhang Ying [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Jiang Shuwen [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Yanrong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Huawei Xian [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China); Li Jinlong [School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054 (China)

2006-03-15

A series of metallic LaNiO{sub 3} (LNO) thin films were deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD) under the oxygen pressure of 20 Pa at different substrate temperatures from 450 to 750 deg. C. X-ray diffraction (XRD) was used to characterize the crystal structure of LNO films. {theta}-2{theta} scans of XRD indicate that LNO film deposited at a substrate temperature of 700 deg. C has a high orientation of (l l 0). At other substrate temperatures, the LNO films have mixed phases of (l l 0) and (l 0 0). Furthermore, pole figure measurements show that LNO thin films, with the bicrystalline structure, were epitaxially deposited on MgO (1 0 0) substrates in the mode of LNO (1 1 0)//MgO (1 0 0) at 700 deg. C. Reflection high-energy electric diffraction (RHEED) and atomic force microscopy (AFM) were also performed to investigate the microstructure of LNO films with the high (l l 0) orientation. RHEED patterns clearly confirm this epitaxial relationship. An atomically smooth surface of LNO films at 700 deg. C was obtained. In addition, bicrystalline epitaxial LNO films, fabricated at 700 deg. C, present a excellent conductivity with a lower electrical resistivity of 300 {mu} {omega} cm. Thus, the obtained results indicate that bicystalline epitaxial LNO films could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.

Coupled quantum dot-ring structures by droplet epitaxy

International Nuclear Information System (INIS)

Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S

2011-01-01

The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

Structural defects and epitaxial rotation of C-60 and C-70(111) films on GeS(001)

DEFF Research Database (Denmark)

Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.

1996-01-01

A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied...

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Orientational Phase Transition Around 274 K in C60 Single Crystal

Institute of Scientific and Technical Information of China (English)

徐亚伯; 何丕模; 杨宏顺; 郑萍; 余朝文; 陈兆甲; 张宣嘉; 李文铸

1994-01-01

The electrical conductivity of a C60 single crystal around 274 K and the specific heat of C60 crystals from 150 to 340 K have been measured.The delta-like specific heat peak at about 251 K related to the first-order phase transition has been reported.The activation energy change around 274 K and the lambda-like specific heat peak beginning at 270 K and ending at 310 K show that there is an orientational phase transition in fcc C60 crystals above 251 K.By taking the symmetry into consideration and further analyzing lambda-like specific heat peak and the activation energy change around 274 K,the conclusion has been reached that this new phase transition is an orientational structure transition from the merohedral twinning fcc to the orientationally disordered fcc.The temperature of free rotation of C60 molecules is about 281 K.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

International Nuclear Information System (INIS)

Ashrafi, Almamun; Aminuzzaman, Mohammod

2011-01-01

ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2) ZnO ||(0 0 0 6) SiC and [112-bar 0] ZnO ||[112-bar 0] SiC . Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

Science.gov (United States)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Thin epitaxial silicon detectors

International Nuclear Information System (INIS)

Stab, L.

1989-01-01

Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

Orientation dependent emission properties of columnar quantum dash laser structures

NARCIS (Netherlands)

Hein, S.; Podemski, P.; Sek, G.; Misiewicz, J.; Ridha, P.; Fiore, A.; Patriarche, G.; Höfling, S.; Forchel, A.

2009-01-01

InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/ cm2, dependent on the CQDash orientation within the cavity.

Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

International Nuclear Information System (INIS)

Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

2004-01-01

Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

Large-area selective CVD epitaxial growth of Ge on Si substrates

NARCIS (Netherlands)

Sammak, A.; De Boer, W.; Nanver, L.K.

2011-01-01

Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

Large anisotropy in colossal magnetoresistance of charge orbital ordered epitaxial Sm0.5Ca0.5MnO3 films

DEFF Research Database (Denmark)

Chen, Yunzhong; Sun, J.R.; Zhao, J.L.

2009-01-01

We investigated the structure and magnetotransport properties of Sm0.5Ca0.5MnO3 (SCMO) films epitaxially grown on (011)-oriented SrTiO3 substrates, which exhibited clear charge/orbital ordering transition. A significant anisotropy of ~1000 in the colossal magnetoresistance (CMR) effect was observ...

For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

Directory of Open Access Journals (Sweden)

Mengmeng Yang

2015-10-01

Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

2007-01-01

Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

Structural analysis of LaVO3 thin films under epitaxial strain

Directory of Open Access Journals (Sweden)

H. Meley

2018-04-01

Full Text Available Rare earth vanadate perovskites exhibit a phase diagram in which two different types of structural distortions coexist: the strongest, the rotation of the oxygen octahedra, comes from the small tolerance factor of the perovskite cell (t = 0.88 for LaVO3 and the smaller one comes from inter-site d-orbital interactions manifesting as a cooperative Jahn-Teller effect. Epitaxial strain acts on octahedral rotations and crystal field symmetry to alter this complex lattice-orbit coupling. In this study, LaVO3 thin film structures have been investigated by X-ray diffraction and scanning transmission electron microscopy. The analysis shows two different orientations of octahedral tilt patterns, as well as two distinct temperature behaviors, for compressive and tensile film strain states. Ab initio calculations capture the strain effect on the tilt pattern orientation in agreement with experimental data.

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

ORIENTATIONAL MICRO-RAMAN SPECTROSCOPY ON HYDROXYAPATITE SINGLE-CRYSTALS AND HUMAN ENAMEL CRYSTALLITES

NARCIS (Netherlands)

TSUDA, H; ARENDS, J

Single crystals of synthetic hydroxyapatite have been examined by orientational micro-Raman spectroscopy. The observed Raman bands include the PO43-/OH- internal and external. modes over the spectral range from 180 to 3600 cm(-1). The Raman-active symmetry tensors (A, E(1), and E(2)) of

Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

Energy Technology Data Exchange (ETDEWEB)

Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

1991-10-01

The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

International Nuclear Information System (INIS)

Shayduk, Roman

2010-01-01

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Synthesis of single phase of CuTl-1234 thin films

CERN Document Server

Khan, N A; Ishida, K; Tateai, F; Kojima, T; Terada, N; Ihara, H

1999-01-01

Thin films of CuTl-1234 superconductor have been prepared for the first time using an amorphous phase epitaxy method (APE). In this method, an amorphous phase is sputtered from a target of stoichiometric composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub x/. Thin films on the SrTiO/sub 3/ substrate after the thallium treatment are biaxially oriented. The XRD reflected a predominant single phase with c-axis 18.7 AA and pole figure measurements of (103) reflections showed a-axis oriented films with Delta phi =0.8 degrees . Resistivity measurements showed T/sub c/=113 K and preliminary J/sub c/ measurements manifested a current density of 1.0*10/sup 6/ A/cm (77 K, 0 T). The composition of films after EDX measurements is Cu /sub 0.3/Tl/sub 0.7/CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. (8 refs).

Formation of Monocrystalline 1D and 2D Architectures via Epitaxial Attachment: Bottom-Up Routes through Surfactant-Mediated Arrays of Oriented Nanocrystals.

Science.gov (United States)

Nakagawa, Yoshitaka; Kageyama, Hiroyuki; Oaki, Yuya; Imai, Hiroaki

2015-06-09

Monocrystalline architectures with well-defined shapes were achieved by bottom-up routes through epitaxial attachment of Mn3O4 nanocrystals. The crystallographically continuous 1D chains elongated in the a axis and 2D panels having large a or c faces were obtained by removal of the organic mediator from surfactant-mediated 1D and 2D arrays of Mn3O4 nanocrystals, respectively. Our basal approach indicates that the epitaxial attachment through the surfactant-mediated arrays is utilized for fabrication of a wide variety of micrometric architectures from nanometric crystalline units.

Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

Directory of Open Access Journals (Sweden)

Yuanzhou Gu

2014-04-01

Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

Structural, magnetic and electrical transport properties in electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} epitaxial film

Energy Technology Data Exchange (ETDEWEB)

Han, Li-an; Zhu, Hua-ze; Zhang, Tao [Xi' an University of Science and Technology, Department of Applied Physics, Xi' an (China); Ma, Zi-wei [Yuncheng University, Department of Physics and Electronic Engineering, Yuncheng (China); Chen, Chang-le [Northwestern Polytechnical University, Department of Applied Physics, Xi' an (China)

2017-03-15

Using a pulsed laser deposition method, the electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} (LHMO) film with the thickness of 90 nm was epitaxially grown on LaAlO{sub 3} (001) single crystal substrate. The structural, magnetic and electrical transport properties of the film have been studied comprehensively. The X-ray diffraction patterns confirm that LHMO film is of single phase, good quality and c axis orientation. The film undergoes a ferromagnetic-like ordering to paramagnetic states at T{sub C} =280 K. Moreover, a spin glass behavior observed in the film may be attributed to the strain effects. Using the percolation theory, we have analyzed the resistivity data ρ (T) of the film and given an excellent fit in the whole temperature range. Particularly, large temperature coefficient of resistance of 11.27% K{sup -} {sup 1} has been discovered near sub-room-temperature, indicating that LHMO film could be useful for bolometric applications. (orig.)

Epitaxial growth of rhenium with sputtering

Energy Technology Data Exchange (ETDEWEB)

Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

2006-02-21

We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

Orientation dependence of deformation and penetration behavior of tungsten single-crystal rods

International Nuclear Information System (INIS)

Bruchey, W.J.; Horwath, E.J.; Kingman, P.W.

1991-01-01

This paper reports on the performance of tungsten single crystals as kinetic energy penetrator materials that was investigated in a high length-to-diameter (L/D) rod geometry at sub-scale (1/4 geometric scale). The [111]. [110], and [100] crystal orientations were tested in this 74-g LD = 15 geometry penetrator (6.90-mm diameter x 102.5-mm length). Several 93% tungsten alloy and uranium 3/4 titanium rod geometries were also tested to baseline expected performance of typical penetrator material/geometry combinations. Performance was determined for semi-infinite penetration into RHA steel and finite penetration into 76.20-mm RHA steel. Of the orientation tested, the [100] orientation provided the best ballistic results, with superior performance to mass and geometric equivalent 93% tungsten alloy rods. The [100] orientation also provided similar performance to geometric equivalent uranium 3/4 titanium rods. Favorable slip/cleavage during the compressive loading of the penetration process to allow penetrator material flow without large scale plastic deformation, and final shear localization at a favorable angle for easy material flow away from the penetration interface, contribute to the [100] orientation crystals' excellent performance. The net result was less energy expenditure during penetrator flow and, therefore, more energy for deformation of RHA

Orientation dependent size effects in single crystalline anisotropic nanoplates with regard to surface energy

International Nuclear Information System (INIS)

Assadi, Abbas; Salehi, Manouchehr; Akhlaghi, Mehdi

2015-01-01

In this work, size dependent behavior of single crystalline normal and auxetic anisotropic nanoplates is discussed with consideration of material surface stresses via a generalized model. Bending of pressurized nanoplates and their fundamental resonant frequency are discussed for different crystallographic directions and anisotropy degrees. It is explained that the orientation effects are considerable when the nanoplates' edges are pinned but for clamped nanoplates, the anisotropy effect may be ignored. The size effects are the highest when the simply supported nanoplates are parallel to [110] direction but as the anisotropy gets higher, the size effects are reduced. The orientation effect is also discussed for possibility of self-instability occurrence in nanoplates. The results in simpler cases are compared with previous experiments for nanowires but with a correction factor. There are still some open questions for future studies. - Highlights: • Size effects in single crystalline anisotropic nanoplates are discussed. • A generalized model is established containing some physical assumptions. • Orientation dependent size effects due to material anisotropy are explained. • Bending, instability and frequencies are studied at normal/auxetic domain

Epitaxial growth of YBa2Cu3O7-δ thin films on LiNbO3 substrates

International Nuclear Information System (INIS)

Lee, S.G.; Koren, G.; Gupta, A.; Segmuller, A.; Chi, C.C.

1989-01-01

In situ epitaxial growth of YBa 2 Cu 3 O 7-δ thin films on Y-cut LiNbO 3 substrates using a standard laser ablation technique is reported. Resistance of the films shows a normal metallic behavior and a very sharp ( c (R=0) of 92 K. High critical current density of J c (77 K)=2x10 5 A/cm 2 is observed, which is in accordance with epitaxial growth. Film orientation observed from x-ray diffraction spectra indicates that the c axis is normal to the substrate plane and the a axis is at 45 degree to the [11.0] direction of the hexagonal lattice of the substrate with two domains in mirror image to the (110) plane

Vapor phase epitaxial growth of FeS sub 2 pyrite and evaluation of the carrier collection in liquid-junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Schlichthoerl, G.; Fiechter, S.; Tributsch, H. (Hahn-Meitner-Inst., Abt. Solare Energetik und Materialforschung, Berlin (Germany))

1992-01-01

Photoactive epitaxial layers of FeS{sub 2} were grown using bromine as a transport agent and a simple closed ampoule technique. The substrates used were (100)-oriented slices of natural pyrite 1 mm thick. A vapor-liquid-solid (VLS) growth mechanism was elucidated by means of optical microscopy. Macrosteps, terrace surfaces and protuberances are often accompanied with the presence of liquid FeBr{sub 3} droplets. In the absence of a liquid phase growth hillocks are found. Localized photovoltaic response for the evaluation of carrier collection using a scanning laser spot system has been used to effectively locate and characterize non-uniformities present in the epitaxial thin films. (orig.).

Domain matching epitaxy of cubic In{sub 2}O{sub 3} on r-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Vogt, Patrick; Trampert, Achim; Ramsteiner, Manfred; Bierwagen, Oliver [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117, Berlin (Germany)

2015-07-15

Undoped, Sn-doped, and Mg-doped In{sub 2}O{sub 3} layers were grown on rhombohedral r-plane sapphire (α-Al{sub 2}O{sub 3} (10.2)) by plasma-assisted molecular beam epitaxy. X-ray diffraction and Raman scattering experiments demonstrated the formation of phase-pure, cubic (110)-oriented In{sub 2}O{sub 3} for Sn- and Mg-concentrations up to 2 x 10{sup 20} and 6 x 10{sup 20} cm{sup -3}, respectively. Scanning electron microscopy images showed facetted domains without any surface-parallel (110) facets. High Mg- or Sn-doping influenced surface morphology and the facet formation. X-ray diffraction Φ-scans indicated the formation of two rotational domains separated by an angle Φ = 86.6 due to the substrate mirror-symmetry around the in-plane-projected Al{sub 2}O{sub 3} c-axis. The in-plane epitaxial relationships to the substrate were determined for both domains. For the first domain it is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 3 anti 4]. For the second domain the inplane epitaxial relation is Al{sub 2}O{sub 3}[01.0] parallel In{sub 2}O{sub 3}[3 anti 34]. A low-mismatch coincidence lattice of indium atoms from the film and oxygen atoms from the substrate rationalizes this epitaxial relation by domain-matched epitaxy. Cross-sectional transmission-electron microscopy showed a columnar domain-structure, indicating the vertical growth of the rotational domains after their nucleation. Coincidence structure of In{sub 2}O{sub 3} (110) (In atoms in red) grown on Al{sub 2}O{sub 3} (10.2) (O atoms in blue) showing two rotational domians. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

2004-01-01

Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

Epitaxial growth mechanisms of graphene and effects of substrates

OpenAIRE

Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

2012-01-01

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-hepta...

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Mechanical properties of metal-organic frameworks: An indentation study on epitaxial thin films

Science.gov (United States)

Bundschuh, S.; Kraft, O.; Arslan, H. K.; Gliemann, H.; Weidler, P. G.; Wöll, C.

2012-09-01

We have determined the hardness and Young's modulus of a highly porous metal-organic framework (MOF) using a standard nanoindentation technique. Despite the very low density of these films, 1.22 g cm-3, Young's modulus reaches values of almost 10 GPa for HKUST-1, demonstrating that this porous coordination polymer is substantially stiffer than normal polymers. This progress in characterizing mechanical properties of MOFs has been made possible by the use of high quality, oriented thin films grown using liquid phase epitaxy on modified Au substrates.

Preparation of biaxially oriented TlCu-1234 thin films

CERN Document Server

Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

1999-01-01

The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO3 interface (invited)

International Nuclear Information System (INIS)

Radaelli, G.; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R.

2014-01-01

Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO 3 (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures

Xe ion beam induced rippled structures on differently oriented single-crystalline Si surfaces

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan [Forschungszentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, PO Box 510119, 01314 Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich, E-mail: A.Hanisch@fzd.d [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany)

2010-03-24

We report on Xe{sup +} induced ripple formation at medium energy on single-crystalline silicon surfaces of different orientations using substrates with an intentional miscut from the [0 0 1] direction and a [1 1 1] oriented wafer. The ion beam incidence angle with respect to the surface normal was kept fixed at 65{sup 0} and the ion beam projection was parallel or perpendicular to the [1 1 0] direction. By a combination of atomic force microscopy, x-ray diffraction and high-resolution transmission electron microscopy we found that the features of the surface and subsurface rippled structures such as ripple wavelength and amplitude and the degree of order do not depend on the surface orientation as assumed in recent models of pattern formation for semiconductor surfaces. (fast track communication)

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

ZnO epitaxy on SiC(0001-bar) substrate: Comparison with ZnO/SiC(0 0 0 1) heterostructure

Energy Technology Data Exchange (ETDEWEB)

Ashrafi, Almamun, E-mail: ash2phy@gmail.com [Department of Physics, University of Vermont, VT 05405 (United States); Aminuzzaman, Mohammod [Department of Chemical Science, Universiti Tunku Abdul Rahman, Perak (Malaysia)

2011-05-01

ZnO thin layers deposited on 6H-SiC substrates showed six-fold crystal symmetry with an epitaxial relationship of (0 0 0 2){sub ZnO}||(0 0 0 6){sub SiC} and [112-bar 0]{sub ZnO}||[112-bar 0]{sub SiC}. Despite the different 6H-SiC substrate surface orientations for the ZnO epitaxy, the orientation relationship of ZnO/6H-SiC heterostructures is identical, as confirmed by X-ray diffraction studies. In these ZnO/6H-SiC(0 0 0 1) and ZnO/6H-SiC(0001-bar) heterostructures, the valence band offsets are measured to be 1.12 eV and 1.09 eV, leading to the conduction band offset values of 0.75 eV and 0.72 eV, respectively. These slightly different band-offset values in ZnO/6H-SiC heterojunctions are attributed to the variation of valence band maximums and the different interface charge compensation mechanisms.

Magnetic properties of novel epitaxial films

International Nuclear Information System (INIS)

Bader, S.D.; Moog, E.R.

1986-09-01

The surface magneto-optic Kerr effect (SMOKE) is used to explore the magnetism of ultra-thin Fe Films extending into the monolayer regime. Both bcc α-Fe and fcc γ-Fe single-crystalline, multilayer films are prepared on the bulk-terminated (1 x 1) structures of Au(100) and Cu(100), respectively. The characterizations of epitaxy and growth mode are performed using low energy electron diffraction and Auger electron spectroscopy. Monolayer-range Fe/Au(100) is ferromagnetic with a lower Curie temperature than bulk α-Fe. The controversial γ-Fe/Cu(100) system exhibits a striking, metastable, surface magnetic phase at temperatures above room temperature, but does not exhibit bulk ferromagnetism

Orientation dependence of deformation and penetration behavior of tungsten single crystal rods

International Nuclear Information System (INIS)

Bruchey, W.J. Jr.; Horwath, E.J.; Kingman, P.W.

1991-01-01

This paper reports on deformation and flow at a target/penetrator interface that occurs under conditions of high hydrostatic pressure and associated heat generation. To further elucidate the role of material structure in the penetration process, oriented single crystals of tungsten have been launched into steel targets and the residual penetrators recovered and analyzed. Both the penetration depth and the deformation characteristics were strongly influenced by the crystallographic orientation. Deformation modes for the left-angle 100 right-angle rod, which exhibited the best performance, appeared to involve considerable localized slip/cleavage and relatively less plastic working; the residual penetrator was extensively cracked and the eroded penetrator material was extruded in a smooth tube lined with an oriented array of discrete particle exhibiting cleavage fractures. Deformation appeared to be much less localized and to involve more extensive plastic working in the left-angle 011 right-angle rod, which exhibited the poorest penetration, while the left-angle 111 right-angle behaved in an intermediate fashion

Thermally induced texture flip in semiconducting polymer stabilized by epitaxial relationship

Science.gov (United States)

O'Hara, Kathryn A.; Pokuri, Balaji S. S.; Takacs, Christopher J.; Beaujuge, Pierre M.; Ganapathysubramanian, Baskar; Chabinyc, Michael L.

The morphology of semiconducting polymer films has a large effect on the charge transport properties. Charges can move easily along the conjugated backbone and in the pi-pi stacking direction. However, transport through the film is determined by the connectivity between domains, which is not well understood. We previously observed quadrites in the polymer, PSBTBT, and proposed that the preferential overlap between lamellae may improve connectivity and provide an additional conduction pathway. Now, the presence of quadrites is revealed in another successful donor polymer, PBDTTPD, using high resolution transmission electron microscopy (HRTEM). A study of how side-chain substitution affects the epitaxial crossing is conducted by examining several PBDTTPD derivatives. The stability of the film texture with annealing is also examined as a function of quadrite formation. It has been shown that heating some semicrystalline polymers above the melting temperature and slow cooling can flip the lamellar texture from face-on to edge-on. We hypothesize that the orientation of lamellar crystallites in PBDTTPD films is stabilized by the epitaxial overlap between adjacent crystalline domains. This may have important implications for the electronic transport properties.

A low-temperature sample orienting device for single crystal spectroscopy at the SNS

Energy Technology Data Exchange (ETDEWEB)

Sherline, T E; Solomon, L; Roberts, C K II; Bruce, D; Gaulin, B; Granroth, G E, E-mail: sherlinete@ornl.gov

2010-11-01

A low temperature sample orientation device providing three axes of rotation has been successfully built and is in testing for use on several spectrometers at the spallation neutron source (SNS). Sample rotation about the vertical ({omega}) axis of nearly 360 deg. and out of plane tilts ({phi} and v) of from -3.4 deg. to 4.4 deg. and from -2.8 deg. to 3.5 deg., respectively, are possible. An off-the-shelf closed cycle refrigerator (CCR) is mounted on a room temperature sealed rotary flange providing {omega} rotations of the sample. Out-of-plane tilts are made possible by piezoelectric actuated angular positioning devices mounted on the low temperature head of the CCR. Novel encoding devices based on magnetoresistive sensors have been developed to measure the tilt stage angles. This combination facilitates single crystal investigations from room temperature to 3.1 K. Commissioning experiments of the rotating CCR for both powder and single crystal samples have been performed on the ARCS spectrometer at the SNS. For the powder sample this device was used to continuously rotate the sample and thus average out any partial orientation of the powder. The powder rings observed in S(Q) are presented. For the single crystal sample, the rotation was used to probe different regions of momentum transfer (Q-space). Laue patterns obtained from a single crystal sample at two rotation angles are presented.

Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic (β) Silicon Carbide

Energy Technology Data Exchange (ETDEWEB)

Pharr, M.; Katoh, Y.; Bei, H.

2006-01-01

Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline β-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the <1 1 0> direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline β-SiC has a strong fracture toughness anisotropy.

Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Prohl, Christopher; Lenz, Andrea, E-mail: alenz@physik.tu-berlin.de [Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin (Germany); Döscher, Henning; Kleinschmidt, Peter; Hannappel, Thomas [Helmholtz Center Berlin for Materials and Energy, 14109 Berlin (Germany)

2016-05-15

In a fundamental cross-sectional scanning tunneling microscopy investigation on epitaxially grown GaP layers on a Si(001) substrate, differently oriented antiphase boundaries are studied. They can be identified by a specific contrast and by surface step edges starting/ending at the position of an antiphase boundary. Moreover, a change in the atomic position of P and Ga atoms along the direction of growth is observed in agreement with the structure model of antiphase boundaries in the GaP lattice. This investigation opens the perspective to reveal the orientation and position of the antiphase boundaries at the atomic scale due to the excellent surface sensitivity of this method.

Performance study on the east-west oriented single-axis tracked panel

International Nuclear Information System (INIS)

Chang, Tian Pau

2009-01-01

A theoretical study on the performance of an east-west oriented single-axis tracked panel was originally proposed in this paper. Mathematic expressions applicable for calculating the angle that the tracked panel should rotate by to follow the Sun are derived. The incident angle of sunlight upon the panel as well as the instantaneous increments of solar energy captured by the panel relative to a fixed horizontal surface are then demonstrated graphically. To simulate different operation environments, three kinds of radiation sources will be considered, i.e. the extraterrestrial radiation, global radiation predicted by empirical models under clear sky situation and global radiation observed in Taiwan. Simulation results show that the yearly gains correlate positively with the radiation level, i.e. 21.2%, 13.5% and 7.4% for the extraterrestrial, predicted and observed radiations, respectively, which are far less than those obtained from a north-south oriented single-axis tracked panel. The irradiation increases with the maximum rotation angle of the panel, the benefit of increasing the rotation in overcast environment is not as good as in clear sky, for annual energy collection 45 o is recommended. The irradiation received decreases with latitude, but it has a greater gain in higher latitude zone.

Mechanical exfoliation of epitaxial graphene on Ir(111) enabled by Br2 intercalation.

Science.gov (United States)

Herbig, Charlotte; Kaiser, Markus; Bendiab, Nedjma; Schumacher, Stefan; Förster, Daniel F; Coraux, Johann; Meerholz, Klaus; Michely, Thomas; Busse, Carsten

2012-08-08

We show here that Br(2) intercalation is an efficient method to enable exfoliation of epitaxial graphene on metals by adhesive tape. We exemplify this method for high-quality graphene of macroscopic extension on Ir(111). The sample quality and the transfer process are monitored using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), scanning electron microscopy (SEM) and Raman spectroscopy. The developed process provides an opportunity for preparing graphene of strictly monatomic thickness and well-defined orientation including the transfer to poly(ethylene terephthalate) (PET) foil.

Structure and functional properties of epitaxial PBZRxTI1-xO3 films

NARCIS (Netherlands)

Vergeer, Kurt

2017-01-01

The work described in this thesis is focused on the characterization and understanding of epitaxial, clamped, dense PbZrxTi1-xO3 (PZT) films. A thermodynamic model is developed, which is used to simulate properties of clamped PZT films throughout this work. The free energy equations for single- and

Magnetic structural effect (MSE in epitaxial films of cerium oxide and lanthanum zirconate

Directory of Open Access Journals (Sweden)

Fatima Kh. Chibirova

2015-06-01

Full Text Available Increasing the critical current density in the second generation high-temperature superconducting wires (2G HTS is the major challenge for researchers and manufacturers of 2G HTS wires all over the world. We proposed a new approach to increase the number of percolation paths for supercurrent, i.e. increasing the number of low angle grain boundaries (<5° in the epitaxial superconducting YBCO layer by magnetic structural processing (MSP of buffer layers. New experimental results have been presented on the application of MSP for improving the structure and increasing the texture sharpness of buffer in electrical conducting element of 2G HTS wire. The influence of MCO on the structural and textural properties has been investigated in a buffer consisting of epitaxial films of cerium oxide CeO2 and lanthanum zirconate La2Zr2O7 in the CeO2/4La2Zr2O7 architecture. The influence of the magnetic processing of the epitaxial La2Zr2O7 buffer film on the shape of grains has been found. An atomic force microscopical study has shown that after magnetic processing the shape of grains improved significantly. A multilayer CeO2/4La2Zr2O7 buffer each layer of which was processed in a magnetic field has a high degree of orientation: only one diffraction peak with (200 indexes is observed in the X-ray spectrum. The X-ray settings of the (200 diffraction peak indicate a well developed epitaxial structure of CeO2 and La2Zr2O7 layers. The texture of the buffer is by more than 2° sharper than that of the Ni–5 at% W substrate.

Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Ross, Ulrich; Lotnyk, Andriy, E-mail: andriy.lotnyk@iom-leipzig.de; Thelander, Erik; Rauschenbach, Bernd

2016-08-15

The thin film deposition and structure of highly oriented telluride compounds is of particular interest for phase-change applications in next-generation non-volatile memory such as heterostructure designs, as well as for the investigation of novel optical, thermoelectric and ferroelectric properties in layered telluride compounds. In this work, epitaxial Ge-Sb-Te thin films were successfully produced by pulsed laser deposition on silicon with and without amorphous SiO{sub x} interlayer at elevated process temperatures from a Ge{sub 2}Sb{sub 2}Te{sub 5} target. Aberration-corrected high-resolution scanning transmission electron microscopy (STEM) imaging reveals a distinct interface configuration of the trigonal phase connected by a quasi van der Waals gap (vacancy) to the Sb/Te-passivated single crystalline Si substrate, yet also an intermediate textured growth regime in which the substrate symmetry is only weakly coupled to the thin film orientation, as well as strong deviation of composition at high deposition temperatures. Textured growth of Ge-Sb-Te thin film was also observed on SiO{sub x}/Si substrate with no evidence of an intermediate Sb/Te surface layer on top of an SiO{sub x} layer. In addition, particular defect structures formed by local reorganization of the stacking sequence across the vacancy gap are observed and appear to be intrinsic to these van der Waals-layered compounds. Theoretical image simulations of preferred stacking sequences can be matched to individual building blocks in the Ge-Sb-Te grain. - Highlights: • Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films. • Changing of overall composition with increasing deposition temperature. • Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface. • The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.

The growth of noble metals in (112-bar0)-oriented hexagonal close-packed nano-films by epitaxy on Nb(001)

International Nuclear Information System (INIS)

Hueger, E.; Osuch, K.

2005-01-01

The morphology and crystal structure of noble metal nano-films deposited on oxygen contaminated and oxygen-free Nb(001) surfaces have been studied with angle-resolved ultraviolet photoelectron spectroscopy, X-ray photo-electron diffraction, and reflection high energy electron diffraction. In the both cases a deposited noble metal film aligns its direction with the [110] direction of the Nb(001) surface. But, while a noble metal grows on an oxygen contaminated Nb(001) surface with the hexagonal close-packed (hcp) (111) planes parallel to the surface (i.e. in the (111)-oriented face centred cubic phase (fcc)), on a non-contaminated Nb(001) it grows with its hcp planes perpendicular to the surface. The latter happens because in the initial stages of the epitaxy the first two monolayers (MLs) of the noble metal grow pseudomorphically on a contamination-free Nb(001). The pseudomorphic layer is strongly extended parallel to the Nb(001) surface in comparison to its natural fcc (001) plane. As a consequence of the atomic volume conservation principle the out-of-plane lattice of the pseudomorphic layer is contracted. Thus, its body centred tetragonal (110) planes, which stay perpendicular to the surface, contract into denser-packed planes, i.e. in hcp ones. In the direction perpendicular to the surface, where the substrate does not have a direct influence on the film, the pseudomorphic layer relaxes into its natural close-packed phase, i.e. into hcp atomic planes. These planes appear as soon as the third pseudomorphic ML begins to grow. The stacking axis of the planes lies in the (100) surface of Nb and is locked by it. The fact that thick nano-films of Cu (up to 50 MLs), Ag and Au (up to 100 MLs) grow in the (112-bar0)-oriented hcp phase can be attributed to a much better fit of the hcp than of fcc stacking sequence to the four-fold symmetry of the Nb(001) surface

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Shayduk, Roman

2010-05-20

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

International Nuclear Information System (INIS)

Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

2014-01-01

Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

Absence of strain-mediated magnetoelectric coupling at fully epitaxial Fe/BaTiO{sub 3} interface (invited)

Energy Technology Data Exchange (ETDEWEB)

Radaelli, G., E-mail: greta.radaelli@gmail.com; Petti, D.; Cantoni, M.; Rinaldi, C.; Bertacco, R. [LNESS Center - Dipartimento di Fisica del Politecnico di Milano, Como 22100 (Italy)

2014-05-07

Interfacial MagnetoElectric coupling (MEC) at ferroelectric/ferromagnetic interfaces has recently emerged as a promising route to achieve electrical writing of magnetic information in spintronic devices. For the prototypical Fe/BaTiO{sub 3} (BTO) system, various MEC mechanisms have been theoretically predicted. Experimentally, it is well established that using BTO single crystal substrates MEC is dominated by strain-mediated mechanisms. In case of ferromagnetic layers epitaxially grown onto BTO films, instead, no direct evidence for MEC has been provided, apart from the results obtained on tunneling junction sandwiching a BTO tunneling barrier. In this paper, MEC at fully epitaxial Fe/BTO interface is investigated by Magneto-Optical Kerr Effect and magnetoresistance measurements on magnetic tunnel junctions fabricated on BTO. We find no evidence for strain-mediated MEC mechanisms in epitaxial systems, likely due to clamping of BTO to the substrate. Our results indicate that pure electronic MEC is the route of choice to be explored for achieving the electrical writing of information in epitaxial ferromagnet-ferroelectric heterostructures.

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

International Nuclear Information System (INIS)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

2009-01-01

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

2009-06-15

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

Effect of Crystal Orientation on Fatigue Failure of Single Crystal Nickel Base Turbine Blade Superalloys

Science.gov (United States)

Arakere, Nagaraj K.; Swanson, Gregory R.

2000-01-01

High Cycle Fatigue (HCF) induced failures in aircraft gas-turbine engines is a pervasive problem affecting a wide range of components and materials. HCF is currently the primary cause of component failures in gas turbine aircraft engines. Turbine blades in high performance aircraft and rocket engines are increasingly being made of single crystal nickel superalloys. Single-crystal Nickel-base superalloys were developed to provide superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys previously used in the production of turbine blades and vanes. Currently the most widely used single crystal turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. PWA1493, identical to PWA1480, but with tighter chemical constituent control, is used in the NASA SSME (Space Shuttle Main Engine) alternate turbopump, a liquid hydrogen fueled rocket engine. Objectives for this paper are motivated by the need for developing failure criteria and fatigue life evaluation procedures for high temperature single crystal components, using available fatigue data and finite element modeling of turbine blades. Using the FE (finite element) stress analysis results and the fatigue life relations developed, the effect of variation of primary and secondary crystal orientations on life is determined, at critical blade locations. The most advantageous crystal orientation for a given blade design is determined. Results presented demonstrates that control of secondary and primary crystallographic orientation has the potential to optimize blade design by increasing its resistance to fatigue crack growth without adding additional weight or cost.

In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

Science.gov (United States)

Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

2005-08-01

In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

2017-09-01

Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

International Nuclear Information System (INIS)

Peng, W.; Lemee, N.; Holc, J.; Kosec, M.; Blinc, R.; Karkut, M.G.

2009-01-01

We have grown lead iron niobate thin films with composition Pb(Fe 1/2 Nb 1/2 )O 3 (PFN) on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely c-axis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHM≤0.09 deg.). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nm-thick films. We also observe a correlation between grain size, surface roughness and film thickness.

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Science.gov (United States)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Inelastic x-ray study of plasmons in oriented single and multi-walled carbon nanotubes

International Nuclear Information System (INIS)

Casa, D.M.; Upton, M.H.; Gog, T.; Misewich, J.; Hill, J.P.; Lowndes, D.; Eres, G.

2006-01-01

Carbon nanotubes (CNT) have a wide variety of interesting properties and a large number of potential aplications in electronic and optical devices. In this study we concentrate on one important aspect of their electronic stucture: the plasmon dispersions in both single- and multi-wall CNTs and their relation to those in graphite. For the first time inelastic X-ray scattering is used to study these collective electronic excitations in oriented CNT samples. The experiments were performed on the IXS instrument at beamline 9ID CMC-XOR, APS, ANL. The incident energy was defined by a Si(333) monochromator, a spherically bent Ge(733) diced analyzer at the end of a 1-m arm focused the incident radiation onto a solid-state detector. The overall resolution was ∼300 meV FWHM. The incident photons were linearly polarized perpendicular to the scattering plane. Energy loss scans were taken by varying the incident energy while keeping the exit energy fixed at 8.9805 keV. The momentum transfer was kept along the nanotubes axis. Spectra were taken at room temperature. The samples were oriented CNTs (both single- and multi-wall) grown on a Si substrate. The samples referred to as 'single-wall' were in fact a few walls at most (1-5) while the multi-walled ones had ∼12 walls. Fig. 1. shows the inelastic spectra for the single-, multi-wall, and highly oriented pyrolithic graphite (HOPG) from top to bottom. Momentum transfer was Q = 0.79 (angstrom) -1 in all cases, its direction was along the tubes for the first two samples or parallel to the sheets for graphite. The peaks at ∼10 and ∼30 eV are known as the π and σ + π plasmons respectively. Fig. 2. shows the complete dispersion curves for both plasmon modes as a function of momentum transfer for all three samples.

Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

International Nuclear Information System (INIS)

Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

2016-01-01

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

Science.gov (United States)

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Metody fizykalne w terapii odleżyn = Physical methods for the treatment of bedsores

Directory of Open Access Journals (Sweden)

Agnieszka Radzimińska

2015-04-01

• 5.      Uniwersytet Kazimierza Wielkiego w Bydgoszczy, Bydgoszcz, Polska   Adres do korespondencji: dr n. med. Agnieszka Radzimińska Uniwersytet Mikołaja Kopernika w Toruniu Collegium Medicum im. Ludwika Rydygiera w Bydgoszczy Katedra Fizjoterapii ul. Marii Skłodowskiej-Curie 9, 85-094 Bydgoszcz e-mail: agnieszka.radziminska@gmail.com   Streszczenie Odleżyny (obok zakażeń szpitalnych to najpoważniejsze powikłania występujące u pacjentów hospitalizowanych. Od lat poszukuje się najskuteczniejszych metod leczenia zachowawczego odleżyn. Wśród tych metod należy zwrócić uwagę na metody leczenia fizykalnego, a wśród nich: fototerapię, elektroterapię, magnetoterapię i sonoterapię.   Summary Pressure ulcers (next to nosocomial infections are the most serious complications occurring in hospitalized patients. For years he sought the most effective methods of conservative treatment of pressure ulcers. Among these methods, you must pay attention to the methods of physical treatment, among them: phototherapy, electrotherapy, magnetic fields and sonotherapy.   Słowa kluczowe: metody fizykalne; terapia; odleżyny. Keywords: physical methods; therapy; bedsores.

Family policy instruments oriented towards single parent families in the Czech Republic and in selected European countries

OpenAIRE

Kohlová, Hana

2014-01-01

This bachelor thesis deals with family policy oriented towards single parent families. This thesis tries to define reasons why single parent families are arising. It addresses the divorce rate, birth rate, and extramarital fertility. Differences between families with both parents and single parent families are defined and the subjective views of single parents in the Czech Republic are described in this thesis. Provisions from family policy, which take into account single parent families in t...

Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

International Nuclear Information System (INIS)

Zytkiewicz, Z.R.

1998-01-01

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

Out-of-plane tilted Josephson junctions of bi-epitaxial YBa2Cu3O x thin films on tilted-axes NdGaO3 substrates with CeO2 seeding layer

International Nuclear Information System (INIS)

Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Kotelyanskii, Iosif M.; Luzanov, Valery A.; Zybtsev, Sergey G.; Hansen, Jorn Bindslev; Jacobsen, Claus S.

2006-01-01

Bi-epitaxial heterostructures YBa 2 Cu 3 O x (YBCO)/CeO 2 /NdGaO 3 were prepared on tilted-axes NdGaO 3 substrates using laser ablation technique. The heterostructures were patterned for electrical measurements using photolithography and ion-beam milling. Electrical anisotropy of the YBCO film was tested on the ion-beam etched surface. Bi-epitaxial junctions with four different orientations of the bi-epitaxial border were fabricated and studied. The measured I V curves showed flux-flow behavior with critical current density 2.5 x 10 4 A/cm 2 for the twist-type junctions and 1.5 x 10 3 A/cm 2 for [1 0 0]-tilt type junctions

Effect of loading orientations on the microstructure and property of Al−Cu single crystal during stress aging

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiqiang [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Chen, Zhiguo, E-mail: zgchen@mail.csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Hunan University of Humanities, Science and Technology, Loudi 417000 (China); Deng, Yunlai [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of High Performance and Complex Manufacturing, Central South University, Changsha 410083 (China); Guo, Xiaobin; Ren, Jieke [School of Material Science and Engineering, Central South University, Changsha 410083 (China)

2016-07-15

The precipitation behavior and property of Al−Cu alloy during stress aging under various loading orientations were investigated using single crystals. The resulting microstructures and the strength property were examined by transmission electron microscope (TEM) and compression test, respectively, and the effect of the distribution of θ′-plates on strength property were discussed. The results show that the precipitation distribution of θ′ was significantly affected by the loading orientation during stress aging of Al−Cu single crystals. Loading along close to 〈011〉{sub Al} directions provided more uniform precipitation distribution of θ′ as compared to loading along close to 〈001〉{sub Al} directions, and therefore provided higher strengthening stress of the θ′-plates for the stress aging sample. The results suggested that regulating the distribution of θ′ and therefore improving strength property are possible via controlling the loading orientation during stress aging. - Highlights: • We studied the effect of loading directions on stress aging of Al−Cu single crystal. • Precipitation distribution of θ′ was noticeably affected by the loading direction. • Loading along close to 〈011〉{sub Al} directions reduced the stress-orienting effect. • The strength property is closely related to the precipitation distribution of θ′. • It is possible to regulate the distribution of θ′ and improve strength property.

Enhanced dielectric nonlinearity in epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Ma, Chunrui, E-mail: chunrui.ma@gmail.com, E-mail: jwu@ku.edu; Wu, Judy, E-mail: chunrui.ma@gmail.com, E-mail: jwu@ku.edu [Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas, 66045 (United States); Ma, Beihai [Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Mi, Shao-Bo [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi' an Jiaotong University, Xi' an 710049 (China); Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Liu, Ming [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi' an Jiaotong University, Xi' an 710049 (China)

2014-04-21

High quality c-axis oriented epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films were fabricated using pulsed laser deposition on (001) LaAlO{sub 3} substrates with conductive LaNiO{sub 3} buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices.

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

2007-08-01

The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Strain-Modulated Epitaxy

National Research Council Canada - National Science Library

Brown, April

1999-01-01

Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

Evolution of spirals during molecular beam epitaxy of GaN on 6H-SiC(0001)

International Nuclear Information System (INIS)

Cui, Y.; Li, L.

2002-01-01

Evolution of spirals during molecular beam epitaxy growth of GaN films on 6H-SiC(0001) was studied by in situ scanning tunneling microscopy. It was found that dislocations emerge at the film surface, creating straight steps with orientation along directions with a density of 10 10 cm -2 for 40-nm-thick films. During subsequent growth, these straight steps wind around dislocations and develop into spirals with a density of 10 9 cm -2 for 100-nm-thick films. The spirals can be classified into three types: single arm, interlocking double arm, and closed loop. The first two types originate from steps with one end pinned, and the third type results from steps with both ends pinned. At film thickness larger than 200 nm, these spirals further evolve into spiral mounds with a density of 10 7 cm -2 . Based on the Burton, Cabrera, and Frank theory, a model is proposed to explain the formation of different types of spirals and the reduction of their densities

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

Science.gov (United States)

Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

2015-11-01

The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

Epitaxial growth of lithium fluoride on the (1 1 1) surface of CaF 2

Science.gov (United States)

Klumpp, St; Dabringhaus, H.

1999-08-01

Growth of lithium fluoride by molecular beam epitaxy on the (1 1 1) surface of calcium fluoride crystals was studied by TEM and LEED for crystal temperatures from 400 to 773 K and impinging lithium fluoride fluxes from 3×10 11 to 3×10 14 cm -2 s -1. Growth starts, usually, at the steps on the (1 1 1) surface of CaF 2. For larger step distances and at later growth stages also growth on the terraces between the steps is found. Preferably, longish, roof-like crystallites are formed, which can be interpreted by growth of LiF(2 0 1¯)[0 1 0] parallel to CaF 2(1 1 1)[ 1¯ 0 1]. To a lesser extent square crystallites, i.e. growth with LiF(0 0 1), and, rarely, three-folded pyramidal crystallites, i.e. growth with LiF(1 1 1) parallel to CaF 2(1 1 1), are observed. While the pyramidal crystallites show strict epitaxial orientation with LiF[ 1¯ 0 1]‖CaF 2[ 1¯ 0 1] and LiF[ 1¯ 0 1]‖CaF 2[1 2¯ 1], only about 80% of the square crystallites exhibit an epitaxial alignment, where LiF[1 0 0]‖CaF 2[ 1¯ 0 1] is preferred to LiF[1 1 0]‖CaF 2[ 1¯ 0 1]. The epitaxial relationships are discussed on the basis of theoretically calculated adsorption positions of the lithium fluoride monomer and dimer on the terrace and at the steps of the CaF 2(1 1 1) surface.

Epitaxial growth mechanisms of graphene and effects of substrates

Science.gov (United States)

Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

2012-06-01

The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

New synthesis method for the growth of epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Yu, X.Z. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China); Hwang, C.G.; Jozwiak, C.M.; Koehl, A. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Schmid, A.K. [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94709 (United States); Lanzara, A., E-mail: ALanzara@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2011-04-15

Highlights: {yields} We report a new straightforward method for the synthesis of micrometer scale graphene sheets. {yields} The process is based on a face to face mehtod in which two SiC substrates are placed one on top of the other and are heated simultaneously, leading to highly homogeneous samples. {yields} The number of graphene layers is determined by the annealing temperature. - Abstract: As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely 'face-to-face' method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover, the graphene thickness can be easily controlled by changing annealing temperature.

Influence of Fiber Orientation on Single-Point Cutting Fracture Behavior of Carbon-Fiber/Epoxy Prepreg Sheets

Directory of Open Access Journals (Sweden)

Yingying Wei

2015-10-01

Full Text Available The purpose of this article is to investigate the influences of carbon fibers on the fracture mechanism of carbon fibers both in macroscopic view and microscopic view by using single-point flying cutting method. Cutting tools with three different materials were used in this research, namely, PCD (polycrystalline diamond tool, CVD (chemical vapor deposition diamond thin film coated carbide tool and uncoated carbide tool. The influence of fiber orientation on the cutting force and fracture topography were analyzed and conclusions were drawn that cutting forces are not affected by cutting speeds but significantly influenced by the fiber orientation. Cutting forces presented smaller values in the fiber orientation of 0/180° and 15/165° but the highest one in 30/150°. The fracture mechanism of carbon fibers was studied in different cutting conditions such as 0° orientation angle, 90° orientation angle, orientation angles along fiber direction, and orientation angles inverse to the fiber direction. In addition, a prediction model on the cutting defects of carbon fiber reinforced plastic was established based on acoustic emission (AE signals.

Influence of Fiber Orientation on Single-Point Cutting Fracture Behavior of Carbon-Fiber/Epoxy Prepreg Sheets.

Science.gov (United States)

Wei, Yingying; An, Qinglong; Cai, Xiaojiang; Chen, Ming; Ming, Weiwei

2015-10-02

The purpose of this article is to investigate the influences of carbon fibers on the fracture mechanism of carbon fibers both in macroscopic view and microscopic view by using single-point flying cutting method. Cutting tools with three different materials were used in this research, namely, PCD (polycrystalline diamond) tool, CVD (chemical vapor deposition) diamond thin film coated carbide tool and uncoated carbide tool. The influence of fiber orientation on the cutting force and fracture topography were analyzed and conclusions were drawn that cutting forces are not affected by cutting speeds but significantly influenced by the fiber orientation. Cutting forces presented smaller values in the fiber orientation of 0/180° and 15/165° but the highest one in 30/150°. The fracture mechanism of carbon fibers was studied in different cutting conditions such as 0° orientation angle, 90° orientation angle, orientation angles along fiber direction, and orientation angles inverse to the fiber direction. In addition, a prediction model on the cutting defects of carbon fiber reinforced plastic was established based on acoustic emission (AE) signals.

Epitaxial growth of Er, Ti doped LiNbO3 films prepared by sol-gel method

International Nuclear Information System (INIS)

Takahashi, Makoto; Yoshiga, Tsuyoshi; Kajitani, Naofumi; Takeda, Yuki; Sato, Shoji; Wakita, Koichi; Ohnishi, Naoyuki; Hotta, Kazutoshi; Kurachi, Masato

2006-01-01

Erbium (Er 3+ ) doped lithium niobate (LiNbO 3 ) thick films were deposited on z-cut congruent LiNbO 3 (LN) substrate by the sol-gel method from the 0.20 mol/dm 3 precursor solution containing various Er 3+ concentration and 0.10 mol/dm 3 poly(vinyl alcohol) (PVA), and their crystal characteristics were evaluated. The Er 3+ concentration in the LN film was controlled by the Er 3+ concentration in the starting solution. The orientation relationships between Er doped LN films and substrates were determined by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy, and (006) oriented Er doped LN epitaxial layers with parallel epitaxial relationships could be grown on the z-cut LN wafer. Moreover, it was made clear from the electron beam diffraction measurements that the film came to be polycrystalline, when the Er concentration was over 3 mol%. The refractive index of Er-doped LN films decreased with increasing Er concentration. 1.5 mol% Ti: 1.0 mol% Er LN films, which acted as a waveguide, were prepared by our so-gel method. It showed the 1530 nm emission by 980 nm excitation, which was considered to be due to the Er 3+ corresponding to the 4 I 13/2 → 4 I 15/2 transition. (author)

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

2011-01-01

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

GEOMETRIC CONTEXT AND ORIENTATION MAP COMBINATION FOR INDOOR CORRIDOR MODELING USING A SINGLE IMAGE

Directory of Open Access Journals (Sweden)

A. B. Jahromi

2016-06-01

Full Text Available Since people spend most of their time indoors, their indoor activities and related issues in health, security and energy consumption have to be understood. Hence, gathering and representing spatial information of indoor spaces in form of 3D models become very important. Considering the available data gathering techniques with respect to the sensors cost and data processing time, single images proved to be one of the reliable sources. Many of the current single image based indoor space modeling methods are defining the scene as a single box primitive. This domain-specific knowledge is usually not applicable in various cases where multiple corridors are joined at one scene. Here, we addressed this issue by hypothesizing-verifying multiple box primitives which represents the indoor corridor layout. Middle-level perceptual organization is the foundation of the proposed method, which relies on finding corridor layout boundaries using both detected line segments and virtual rays created by orthogonal vanishing points. Due to the presence of objects, shadows and occlusions, a comprehensive interpretation of the edge relations is often concealed. This necessitates the utilization of virtual rays to create a physically valid layout hypothesis. Many of the former methods used Orientation Map or Geometric Context to evaluate their proposed layout hypotheses. Orientation map is a map that reveals the local belief of region orientations computed from line segments, and in a segmented image geometric context uses color, texture, edge, and vanishing point cues to estimate the likelihood of each possible label for all super-pixels. Here, the created layout hypotheses are evaluated by an objective function which considers the fusion of orientation map and geometric context with respect to the horizontal viewing angle at each image pixel. Finally, the best indoor corridor layout hypothesis which gets the highest score from the scoring function will be selected

Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

NARCIS (Netherlands)

Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.

2011-01-01

We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be

Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

International Nuclear Information System (INIS)

Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

2008-01-01

Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

Interface relaxation and band gap shift in epitaxial layers

Directory of Open Access Journals (Sweden)

Ziming Zhu

2012-12-01

Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

Energy Technology Data Exchange (ETDEWEB)

Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

2008-08-18

We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

International Nuclear Information System (INIS)

Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

1991-01-01

Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Prater, John T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Punugupati, Sandhyarani; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-04-04

We report on the ferromagnetic-like behavior in otherwise diamagnetic BaTiO{sub 3} (BTO) thin films upon doping with non-magnetic element Sr having the composition Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST). The epitaxial integration of BST (∼800 nm) thick films on Si (100) substrate was achieved using MgO (40 nm) and TiN (20 nm) as buffer layers to prepare BST/MgO/TiN/Si (100) heterostructure by pulsed laser deposition. The c-axis oriented and cube-on-cube epitaxial BST is formed on Si (100) as evidenced by the in-plane and out-of-plane X-ray diffraction. All the deposited films are relaxed through domain matching epitaxy paradigm as observed from X-ray diffraction pattern and A{sub 1}TO{sub 3} mode (at 521.27 cm{sup −1}) of Raman spectra. As-deposited BST thin films reveal ferromagnetic-like properties, which persist up to 400 K. The magnetization decreases two-fold upon oxygen annealing. In contrast, as-deposited un-doped BTO films show diamagnetism. Electron spin resonance measurements reveal no evidence of external magnetic impurities. XRD and X-ray photoelectron spectroscopy spectra show significant changes influenced by Sr doping in BTO. The ferromagnetic-like behavior in BST could be due to the trapped electron donors from oxygen vacancies resulting from Sr-doping.

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Science.gov (United States)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Pulsed laser deposition of epitaxial Sr(RuxSn1-x)O3 thin film electrodes and KNbO3/Sr(RuxSn1-x)O3 bilayers

International Nuclear Information System (INIS)

Christen, H.M.; Boatner, L.A.; English, L.Q.; Geea, L.A.; Marrero, P.J.; Norton, D.P.

1995-01-01

Sr(Ru x Sn 1-x ) 3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru o 48 Sn 0.52 )0 3 composition exhibits an excellent lattice match with (100)-oriented KTaO 3 , and films of this composition grown by pulsed laser deposition on KTaO 3 , SrTiO 3 , and LaAlO 3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO 3 /Sr(Ru 0.48 Sn 0.52 )O 3 bilayers have been successfully grown

Role of Y in the oxidation resistance of CrAlYN coatings

Science.gov (United States)

Domínguez-Meister, S.; El Mrabet, S.; Escobar-Galindo, R.; Mariscal, A.; Jiménez de Haro, M. C.; Justo, A.; Brizuela, M.; Rojas, T. C.; Sánchez-López, J. C.

2015-10-01

CrAlYN coatings with different aluminum (4-12 at.%) and yttrium (2-5 at.%) contents are deposited by d.c. reactive magnetron sputtering on silicon and M2 steel substrates using metallic targets and Ar/N2 mixtures. The influence of the nanostructure and chemical elemental distribution on the oxidation resistance after heating in air at 1000 °C is studied by means of cross-sectional scanning electron microscopy (X-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and glow discharge optical emission spectroscopy (GD-OES). The sequential exposure to the metallic targets during the synthesis leads to a multilayer structure where concentration of metallic elements (Cr, Al and Y) is changing periodically. A good oxidation resistance is observed when Al- and Y-rich regions are separated by well-defined CrN layers, maintaining crystalline coherence along the columnar structure. This protective behavior is independent of the type of substrate and corresponds to the formation of a thin mixed (Al, Cr)-oxide scale that protects the film underneath. The GD-OES and XRD analysis have demonstrated that Y acts as a reactive element, blocking the Fe and C atoms diffusion from the steel and favoring higher Al/Cr ratio in the passivation layer after heating. The coating with Y content around 4 at.% exhibited the best performance with a thinner oxide scale, a delay in the CrN decomposition and transformation to Cr2N, and a more effective Fe and C blocking.

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

International Nuclear Information System (INIS)

Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

2002-01-01

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Morphology development and oriented growth of single crystalline ZnO nanorod

International Nuclear Information System (INIS)

Wu Lili; Wu Youshi; Lue Wei; Wei Huiying; Shi Yuanchang

2005-01-01

Single crystalline ZnO nanorods were achieved by the assembly of nanocrystallines in tens of nanometer under hydrothermal conditions with the assistance of surfactant cetyltrimethylammonium bromide (CTAB). The obtained nanorod has rough surface as a result of oriented attachment growth. Transmission electron microscope (TEM) images showed the morphology evolution of the nanorod at different reaction time. Defects were observed and porous structure was left after the assembly of hundreds of nanocrystalline building blocks. Effect of pH condition on the morphology of the nanorod was also investigated

Subcortical orientation biases explain orientation selectivity of visual cortical cells.

Science.gov (United States)

Vidyasagar, Trichur R; Jayakumar, Jaikishan; Lloyd, Errol; Levichkina, Ekaterina V

2015-04-01

The primary visual cortex of carnivores and primates shows an orderly progression of domains of neurons that are selective to a particular orientation of visual stimuli such as bars and gratings. We recorded from single-thalamic afferent fibers that terminate in these domains to address the issue whether the orientation sensitivity of these fibers could form the basis of the remarkable orientation selectivity exhibited by most cortical cells. We first performed optical imaging of intrinsic signals to obtain a map of orientation domains on the dorsal aspect of the anaesthetized cat's area 17. After confirming using electrophysiological recordings the orientation preferences of single neurons within one or two domains in each animal, we pharmacologically silenced the cortex to leave only the afferent terminals active. The inactivation of cortical neurons was achieved by the superfusion of either kainic acid or muscimol. Responses of single geniculate afferents were then recorded by the use of high impedance electrodes. We found that the orientation preferences of the afferents matched closely with those of the cells in the orientation domains that they terminated in (Pearson's r = 0.633, n = 22, P = 0.002). This suggests a possible subcortical origin for cortical orientation selectivity. © 2015 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

Magnetic-property changes in epitaxial metal-film sandwiches

International Nuclear Information System (INIS)

Brodsky, M.B.

1982-08-01

Epitaxial metal-film sandwiches (EMFS) containing Pd or Cr, have been prepared between single-crystal Ag or Au. The modified Pd/Cr show major changes in physical properties. Pd has a stretched lattice parameter in Au-Pd-Au, which combines with a tetragonal distortion to cause exchange enhancements up to 28,000 and spin-fluctuation temperatures of 1 to 10 K. In Au-Cr-Au, Cr takes up the fcc structure, leading to superconductivity due to a high N(E/sub F/). These results are contrasted to data for Ag-Pd-Ag and Ag-Cr-Ag EMFS

Point defect balance in epitaxial GaSb

International Nuclear Information System (INIS)

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014-01-01

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

Energy Technology Data Exchange (ETDEWEB)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A.

2016-05-25

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

International Nuclear Information System (INIS)

Wessels, B.W.

1980-01-01

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

International Nuclear Information System (INIS)

Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

1996-12-01

The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

International Nuclear Information System (INIS)

Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

2009-01-01

Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

Domain-orientation dependence of levitation force in seeded melt grown single-domain YBa2Cu3Ox

International Nuclear Information System (INIS)

Shi, D.; Qu, D.; Sagar, S.; Lahiri, K.

1997-01-01

Domain-orientation dependence of levitation force has been determined for single-domain YBa 2 Cu 3 O x . The single-domain material is obtained from a seeded melt growth process. The levitation force has been found to reach a maximum as the c axis of the domain is parallel to the direction of the force. The levitation force decreases in a cosine law fashion as the angle θ (the angle between the direction of the force and the c axis) increases from 0 degree to 60 degree. A maximum anisotropy of levitation force of 2.29 has been found. A physical model is proposed to explain the observed orientation dependence. copyright 1997 American Institute of Physics

AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

International Nuclear Information System (INIS)

Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

2016-01-01

Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

Energy Technology Data Exchange (ETDEWEB)

Kordatos, Apostolis [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Kelaidis, Nikolaos, E-mail: n.kelaidis@inn.demokritos.gr [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Giamini, Sigiava Aminalragia [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); University of Athens, Department of Physics, Section of Solid State Physics, Athens, 15684 Greece (Greece); Marquez-Velasco, Jose [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); National Technical University of Athens, Department of Physics, Athens, 15784 Greece (Greece); Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece)

2016-04-30

Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

Energy Technology Data Exchange (ETDEWEB)

Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

2011-11-01

A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

Science.gov (United States)

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Dual-modality single particle orientation and rotational tracking of intracellular transport of nanocargos.

Science.gov (United States)

Sun, Wei; Gu, Yan; Wang, Gufeng; Fang, Ning

2012-01-17

The single particle orientation and rotational tracking (SPORT) technique was introduced recently to follow the rotational motion of plasmonic gold nanorod under a differential interference contrast (DIC) microscope. In biological studies, however, cellular activities usually involve a multiplicity of molecules; thus, tracking the motion of a single molecule/object is insufficient. Fluorescence-based techniques have long been used to follow the spatial and temporal distributions of biomolecules of interest thanks to the availability of multiplexing fluorescent probes. To know the type and number of molecules and the timing of their involvement in a biological process under investigation by SPORT, we constructed a dual-modality DIC/fluorescence microscope to simultaneously image fluorescently tagged biomolecules and plasmonic nanoprobes in living cells. With the dual-modality SPORT technique, the microtubule-based intracellular transport can be unambiguously identified while the dynamic orientation of nanometer-sized cargos can be monitored at video rate. Furthermore, the active transport on the microtubule can be easily separated from the diffusion before the nanocargo docks on the microtubule or after it undocks from the microtubule. The potential of dual-modality SPORT is demonstrated for shedding new light on unresolved questions in intracellular transport.

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Epitaxial growth of high quality SrFeO ₃ films on (001) oriented (LaAlO ₃ ) _0.3 (Sr ₂ TaAlO ₆ ) _0.7

Energy Technology Data Exchange (ETDEWEB)

Hong, Deshun [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Liu, Changjiang [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Pearson, John [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Bhattacharya, Anand [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2017-12-04

Growth of strontium ferrite SrFeO3 films with stoichiometry of (1:1:3) is challenging as the unstable Fe4+ oxidation state favors the formation of O vacancies. Here, we report layer by layer growth of SrFeO3 on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7 using ozone assisted molecular beam epitaxy. Upon cooling from room temperature, the film’s resistivity decreased from 750 Ω ∙ to 150 Ω ∙ , as low as the best single crystals, with two identifiable transition points near 110 K and 60 K in resistivity measurements, being hysteretic between cooling and warming through the 60 K transition. During various annealing steps, the low temperature resistivity changes by orders of magnitude, accompanied by an increase in the c-axis lattice parameter. The hysteresis near 60 K persists for a wide range of annealing conditions. We have identified conditions under which changes due to annealing can be reversed. We attribute changes in resistivity and out of plane lattice parameter to the reversible movement of oxygen ions in the lattice. SrFeO3 may be a promising material for resistive memory applications based upon the control of oxygen vacancies.

All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

2016-01-28

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

Magnetic properties of epitaxial bismuth ferrite-garnet mono- and bilayers

International Nuclear Information System (INIS)

Semuk, E.Yu.; Berzhansky, V.N.; Prokopov, A.R.; Shaposhnikov, A.N.; Karavainikov, A.V.; Salyuk, O.Yu.; Golub, V.O.

2015-01-01

Magnetic properties of Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 (84 nm) and Bi 2.8 Y 0.2 Fe 5 O 12 (180 nm) films epitaxially grown on gallium-gadolinium garnet (GGG) single crystal (111) substrate as well as Bi 1.5 Gd 1.5 Fe 4.5 Al 0.5 O 12 /Bi 2.8 Y 0.2 Fe 5 O 12 bilayer were investigated using ferromagnetic resonance technique. The mismatch of the lattice parameters of substrate and magnetic layers leads to formation of adaptive layers which affect on the high order anisotropy constant of the films but practically do not affect on uniaxial perpendicular magnetic anisotropy The magnetic properties of the bilayer film were explained in supposition of strong exchange coupling between magnetic layers taking into account film-film and film-substrate elastic interaction. - Highlights: • Magnetic parameters of epitaxial Bi-YIG films and bilayers on GGG substrate. • Adaptive layers affect on high order magnetic anisotropy. • Magnetic properties of bilayers are result of strong exchange interaction

The impact of white matter fiber orientation in single-acquisition quantitative susceptibility mapping.

Science.gov (United States)

Lancione, Marta; Tosetti, Michela; Donatelli, Graziella; Cosottini, Mirco; Costagli, Mauro

2017-11-01

The aim of this work was to assess the impact of tissue structural orientation on quantitative susceptibility mapping (QSM) reliability, and to provide a criterion to identify voxels in which measures of magnetic susceptibility (χ) are most affected by spatial orientation effects. Four healthy volunteers underwent 7-T magnetic resonance imaging (MRI). Multi-echo, gradient-echo sequences were used to obtain quantitative maps of frequency shift (FS) and χ. Information from diffusion tensor imaging (DTI) was used to investigate the relationship between tissue orientation and FS measures and QSM. After sorting voxels on the basis of their fractional anisotropy (FA), the variations in FS and χ values over tissue orientation were measured. Using a K-means clustering algorithm, voxels were separated into two groups depending on the variability of measures within each FA interval. The consistency of FS and QSM values, observed at low FA, was disrupted for FA > 0.6. The standard deviation of χ measured at high FA (0.0103 ppm) was nearly five times that at low FA (0.0022 ppm). This result was consistent through data across different head positions and for different brain regions considered separately, which confirmed that such behavior does not depend on structures with different bulk susceptibility oriented along particular angles. The reliability of single-orientation QSM anticorrelates with local FA. QSM provides replicable values with little variability in brain regions with FA < 0.6, but QSM should be interpreted cautiously in major and coherent fiber bundles, which are strongly affected by structural anisotropy and magnetic susceptibility anisotropy. Copyright © 2017 John Wiley & Sons, Ltd.

Epitaxial Sb-doped SnO{sub 2} and Sn-doped In{sub 2}O{sub 3} transparent conducting oxide contacts on GaN-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Tsai, Min-Ying [Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (United States); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Materials Department, University of California, Santa Barbara, CA 93106 (United States); Paul-Drude-Insitut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, James S. [Materials Department, University of California, Santa Barbara, CA 93106 (United States)

2016-04-30

We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO{sub 2} (ATO) and (111)-oriented, cubic Sn-doped In{sub 2}O{sub 3} (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO{sub Domain1}[‐ 211]|| ITO{sub Domain2}[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10{sup −} {sup 3} Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga{sub 2}O{sub 3} interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10{sup −4} Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO{sub 2}:Sb (ATO) and In{sub 2}O{sub 3}:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short

Orientation dependence of shape memory and super elastic effects in Ti-30% Ni-20% Cu single crystals

International Nuclear Information System (INIS)

Chumlyakov, Yu.I.; Kireeva, I.V.

1999-01-01

Single crystals of Ti-30% Ni-20% Cu (at.%) alloy experiencing B2-B19 martensitic transformation are used to study the dependence of deforming stress σ cr , shape memory effect and super elasticity on test temperature, crystal orientation and the sign of tension/compression stresses. It is shown that experimental values of shape memory effect and super elasticity as well as their dependences on orientation and loading regime are described within the frameworks of the model taking into account lattice distortions only. The orientation dependence and axial stress asymmetry in the temperature range of stress-induced martensite formation are determined by the dependence of lattice distortion during B2-B19 martensitic transformations on the orientation and the sign of applied stresses [ru

Reliability-Oriented Design and Analysis of Input Capacitors in Single-Phase Transformer-less Photovoltaic Inverters

DEFF Research Database (Denmark)

Wang, Huai; Yang, Yongheng; Blaabjerg, Frede

2013-01-01

While 99% efficiency has been reported, the target of 20 years of service time imposes new challenge to cost-effective solutions for grid-connected photovoltaic (PV) inverters. Aluminum electrolytic capacitors are the weak-link in terms of reliability and lifetime in single-phase PV systems....... A reliability-oriented design guideline is proposed in this paper for the input capacitors in single-phase transformer-less PV inverters. The guideline ensures that the service time requirement is to be accomplished under different power levels and ambient temperature profiles. The theoretical analysis has been...... demonstrated by a 1 kW single-phase PV inverter....

Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

Science.gov (United States)

Xie, Yali; Zhan, Qingfeng; Shang, Tian; Yang, Huali; Wang, Baomin; Tang, Jin; Li, Run-Wei

2017-05-01

We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO) and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO) displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

Effect of epitaxial strain and lattice mismatch on magnetic and transport behaviors in metamagnetic FeRh thin films

Directory of Open Access Journals (Sweden)

Yali Xie

2017-05-01

Full Text Available We grew 80 nm FeRh films on different single crystals with various lattice constants. FeRh films on SrTiO3 (STO and MgO substrates exhibit an epitaxial growth of 45° in-plane structure rotation. In contrast, FeRh on LaAlO3 (LAO displays a mixed epitaxial growth of both 45° in-plane structure rotation and cube-on-cube relationships. Due to the different epitaxial growth strains and lattice mismatch values, the critical temperature for the magnetic phase transition of FeRh can be changed between 405 and 360 K. In addition, the external magnetic field can shift this critical temperature to low temperature in different rates for FeRh films grown on different substrates. The magnetoresistance appears a maximum value at different temperatures between 320 and 380 K for FeRh films grown on different substrates.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

Science.gov (United States)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

A new hybrid two-zone/crucible furnace process for the growth of epitaxial Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} superconducting films

Energy Technology Data Exchange (ETDEWEB)

Siegal, M.P.; Overmyer, D.L.; Venturini, E.L.; Dominguez, F.; Padilla, R.R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States)

1998-12-01

Epitaxial Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8} (Tl-2212) films {approximately}5500 {Angstrom} thick are grown on LaAlO{sub 3}(100) substrates using a new hybrid two-zone/crucible furnace process enabling precise control of thallination. This method combines the best features of both conventional crucible and two-zone processing for the first time: superb film properties and reduced handling of hazardous Tl-oxide powders. Single-phase, highly {ital c}-axis oriented Tl-2212 films are grown with smooth morphology, Meissner transition {approximately}103 K, and critical current density {approximately}1.1{times}10{sup 7}A/cm{sup 2} at 5 K for twenty consecutive runs without having to change or add to the Tl-oxide source. {copyright} {ital 1998 Materials Research Society.}

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0 �

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

Transition metal (TM) nitrides, due to their unique combination of remarkable physical properties and simple NaCl structure, are presently utilized in a broad range of applications and as model systems in the investigation of complex phenomena. Group-IVB nitrides TiN, ZrN, and HfN have transport properties which include superconductivity and high electrical conductivity; consequentially, they have become technologically important as electrodes and contacts in the semiconducting and superconducting industries. The Group-VB nitride VN, which exhibits enhanced ductility, is a fundamental component in superhard and tough nanostructured hard coatings. In this thesis, I investigate the lattice dynamics responsible for controlling superconductivity and electrical conductivities in Group-IVB nitrides and elasticity and structural stability of the NaCl-structure Group-VB nitride VN. Our group has already synthesized high-quality epitaxial TiN, HfN, and CeN layers on MgO(001) substrates. By irradiating the growth surface with high ion fluxes at energies below the bulk lattice-atom displacement threshold, dense epitaxial single crystal TM nitride films with extremely smooth surfaces have been grown using ultra-high vacuum magnetically-unbalanced magnetron sputter deposition. Using this approach, I completed the Group-IVB nitride series by growing epitaxial ZrN/MgO(001) films and then grew Group-VB nitride VN films epitaxially on MgO(001), MgO(011), and MgO(111). The combination of high-resolution x-ray diffraction (XRD) reciprocal lattice maps (RLMs), high-resolution cross-sectional transmission electron microscopy (HR-XTEM), and selected-area electron diffraction (SAED) show that single-crystal stoichiometric ZrN films grown at 450 °C are epitaxially oriented cube-on-cube with respect to their MgO(001) substrates, (001) ZrN||(001)MgO and [100]ZrN||[100]MgO. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm. X-ray reflectivity results reveal that

Reclamation of a molecular beam epitaxy system and conversion for oxide epitaxy

International Nuclear Information System (INIS)

Carver, Alexander G.; Henderson, Walter; Doolittle, W. Alan

2008-01-01

An early 1980s vintage molecular beam epitaxy system, a Varian Gen II system, originally used for HgCdTe epitaxy, was converted into a system capable of growing thin-film complex metal oxides. The nature of some of the alternative oxides requires a thorough cleaning and, in some cases, complete replacement of system components. Details are provided regarding the chemistry of the etchants used, safety requirements for properly handling, and disposal of large quantities of etchants and etch by-products, and components that can be reused versus components that require replacement are given. Following the given procedures, an ultimate base pressure of 2x10 -10 Torr was obtained. Films grown in the system after reclamation contained no evidence of previously present materials down to the detection limit of secondary ion mass spectrometry

Coercive force features in stressed epitaxial ferrite-garnet films

International Nuclear Information System (INIS)

Dubinko, S.V.; Nedviga, A.S.; Vishnevskij, V.G.; Shaposhnikov, A.N.; Yagupov, V.S.; Nesteruk, A.G.; Prokopov, A.R.

2005-01-01

One has investigated into effect of a relative mismatching of periods of lattices of a film and of a substrate within 0.5-0.85% range on behavior of the coercive force of (Bi, Sm, Lu, Ca) 3 (Fe, Sc, Ga, Al) 5 O 12 composition ferrite garnet epitaxial films (FGEF) synthesized at (111) orientation gadolinium-gallium garnet substrates. One has revealed that the FGEF coercive force at increase of the relative mismatching of periods of lattices of a film and of a substrate increases at first, while when reaching the maximum value it begins to decrease. The coercive force maximum value is shown to result from the periodical localized stresses. The period of the localized stresses is determined by the value of mismatching of periods of lattices of a film and of a substrate [ru

Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

International Nuclear Information System (INIS)

Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

2013-01-01

In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers

Directory of Open Access Journals (Sweden)

Jutta Schwarzkopf

2017-08-01

Full Text Available The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzburg–Devonshire theory. In this paper, we illustrate the opportunity of ferroelectric domain engineering in the KxNa1−xNbO3 lead-free material system. In particular, the following examples are discussed in detail: (i Different substrates (NdGaO3, SrTiO3, DyScO3, TbScO3, and GdScO3 are used to systematically tune the incorporated epitaxial strain from compressive to tensile. This can be exploited to adjust the NaNbO3 thin film surface orientation and, concomitantly, the vector of electrical polarization, which rotates from mainly vertical to exclusive in-plane orientation. (ii In ferroelectric NaNbO3, thin films grown on rare-earth scandate substrates, highly regular stripe domain patterns are observed. By using different film thicknesses, these can be tailored with regard to domain periodicity and vertical polarization component. (iii A featured potassium concentration of x = 0.9 of KxNa1−xNbO3 thin films grown on (110 NdScO3 substrates favors the coexistence of two equivalent, monoclinic, but differently oriented ferroelectric phases. A complicated herringbone domain pattern is experimentally observed which consists of alternating MC and a1a2 domains. The coexistence of different types of ferroelectric domains leads to polarization discontinuities at the domain walls, potentially enabling high piezoelectric responses. In each of these examples, the experimental results are in excellent agreement with predictions based on the linear elasticity theory.

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

International Nuclear Information System (INIS)

Chen, S.Y.; Chen, L.J.

2006-01-01

Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

Epitaxial solution deposition of YBa2Cu3O7-6 coated conductors.

Energy Technology Data Exchange (ETDEWEB)

Overmyer, Donald L.; Clem, Paul Gilbert; Siegal, Michael P.; Holesinger, Terry A. (Los Alamos National Laboratory, Los Alamos, NM); Voigt, James A.; Richardson, Jacob J.; Dawley, Jeffrey Todd

2004-11-01

A variety of solution deposition routes have been reported for processing complex perovskite-based materials such as ferroelectric oxides and conductive electrode oxides, due to ease of incorporating multiple elements, control of chemical stoichiometry, and feasibility for large area deposition. Here, we report an extension of these methods toward long length, epitaxial film solution deposition routes to enable biaxially oriented YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)-coated conductors for superconducting transmission wires. Recent results are presented detailing an all-solution deposition approach to YBCO-coated conductors with critical current densities J{sub c} (77 K) > 1 MA/cm{sup 2} on rolling-assisted, biaxially textured, (200)-oriented Ni-W alloy tapes. Solution-deposition methods such as this approach and those of other research groups appear to have promise to compete with vapor phase methods for superconductor electrical properties, with potential advantages for large area deposition and low cost/kA {center_dot} m of wire.

Molecular beam epitaxy a short history

CERN Document Server

Orton, J W

2015-01-01

This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

Socioeconomic Status, Parenting, and Externalizing Problems in African American Single-Mother Homes: A Person-Oriented Approach

Science.gov (United States)

Anton, Margaret T.; Jones, Deborah J.; Youngstrom, Eric A.

2016-01-01

African American youth, particularly those from single-mother homes, are overrepresented in statistics on externalizing problems. The family is a central context in which to understand externalizing problems; however, reliance on variable-oriented approaches to the study of parenting, which originate from work with intact, middle-income, European American families, may obscure important information regarding variability in parenting styles among African American single mothers, and in turn, variability in youth outcomes as well. The current study demonstrated that within African American single-mother families: (a) a person-, rather than variable-, oriented approach to measuring parenting style may further elucidate variability; (b) socioeconomic status may provide 1 context within which to understanding variability in parenting style; and (c) 1 marker of socioeconomic status, income, and parenting style may each explain variability in youth externalizing problems; however, the interaction between income and parenting style was not significant. Findings have potential implications for better understanding the specific contexts in which externalizing problems may be most likely to occur within this at-risk and underserved group. PMID:26053349

Socioeconomic status, parenting, and externalizing problems in African American single-mother homes: A person-oriented approach.

Science.gov (United States)

Anton, Margaret T; Jones, Deborah J; Youngstrom, Eric A

2015-06-01

African American youth, particularly those from single-mother homes, are overrepresented in statistics on externalizing problems. The family is a central context in which to understand externalizing problems; however, reliance on variable-oriented approaches to the study of parenting, which originate from work with intact, middle-income, European American families, may obscure important information regarding variability in parenting styles among African American single mothers, and in turn, variability in youth outcomes as well. The current study demonstrated that within African American single-mother families: (a) a person-, rather than variable-, oriented approach to measuring parenting style may further elucidate variability; (b) socioeconomic status may provide 1 context within which to understanding variability in parenting style; and (c) 1 marker of socioeconomic status, income, and parenting style may each explain variability in youth externalizing problems; however, the interaction between income and parenting style was not significant. Findings have potential implications for better understanding the specific contexts in which externalizing problems may be most likely to occur within this at-risk and underserved group. (c) 2015 APA, all rights reserved).

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

Science.gov (United States)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

Science.gov (United States)

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

KAUST Repository

Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tao

2016-01-01

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

KAUST Repository

Shen, Youde

2016-06-02

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. © 2016 American Chemical Society.

Spin-injection into epitaxial graphene on silicon carbide

Science.gov (United States)

Konishi, Keita; Cui, Zhixin; Hiraki, Takahiro; Yoh, Kanji

2013-09-01

We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 Å) and a ferromagnetic Co (600 Å) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement.

Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

Energy Technology Data Exchange (ETDEWEB)

Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

2010-01-10

Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

2016-11-01

Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

International Nuclear Information System (INIS)

Chien, C.J.; Bravman, J.C.

1990-01-01

The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

Compositional dependence of the Young's modulus and piezoelectric coefficient of (110)-oriented pulsed laser deposited PZT thin films

NARCIS (Netherlands)

Nazeer, H.; Nguyen, Duc Minh; Rijnders, Augustinus J.H.M.; Sardan Sukas, Ö.; Abelmann, Leon; Elwenspoek, Michael Curt

2014-01-01

In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrₓTi₿₋ₓ)O₃ (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric

High-quality EuO thin films the easy way via topotactic transformation

Science.gov (United States)

Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

2015-07-01

Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. As the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

Epitaxially grown strained pentacene thin film on graphene membrane.

Science.gov (United States)

Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

2015-05-06

Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single molecule fluorescence image patterns linked to dipole orientation and axial position: application to myosin cross-bridges in muscle fibers.

Directory of Open Access Journals (Sweden)

Thomas P Burghardt

2011-02-01

Full Text Available Photoactivatable fluorescent probes developed specifically for single molecule detection extend advantages of single molecule imaging to high probe density regions of cells and tissues. They perform in the native biomolecule environment and have been used to detect both probe position and orientation.Fluorescence emission from a single photoactivated probe captured in an oil immersion, high numerical aperture objective, produces a spatial pattern on the detector that is a linear combination of 6 independent and distinct spatial basis patterns with weighting coefficients specifying emission dipole orientation. Basis patterns are tabulated for single photoactivated probes labeling myosin cross-bridges in a permeabilized muscle fiber undergoing total internal reflection illumination. Emitter proximity to the glass/aqueous interface at the coverslip implies the dipole near-field and dipole power normalization are significant affecters of the basis patterns. Other characteristics of the basis patterns are contributed by field polarization rotation with transmission through the microscope optics and refraction by the filter set. Pattern recognition utilized the generalized linear model, maximum likelihood fitting, for Poisson distributed uncertainties. This fitting method is more appropriate for treating low signal level photon counting data than χ(2 minimization.Results indicate that emission dipole orientation is measurable from the intensity image except for the ambiguity under dipole inversion. The advantage over an alternative method comparing two measured polarized emission intensities using an analyzing polarizer is that information in the intensity spatial distribution provides more constraints on fitted parameters and a single image provides all the information needed. Axial distance dependence in the emission pattern is also exploited to measure relative probe position near focus. Single molecule images from axial scanning fitted

Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

International Nuclear Information System (INIS)

Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

1995-01-01

The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

High quality GaAs single photon emitters on Si substrate

International Nuclear Information System (INIS)

Bietti, S.; Sanguinetti, S.; Cavigli, L.; Accanto, N.; Vinattieri, A.; Minari, S.; Abbarchi, M.; Isella, G.; Frigeri, C.; Gurioli, M.

2013-01-01

We describe a method for the direct epitaxial growth of a single photon emitter, based on GaAs quantum dots fabricated by droplet epitaxy, working at liquid nitrogen temperatures on Si substrates. The achievement of quantum photon statistics up to T=80 K is directly proved by antibunching in the second order correlation function as measured with a H anbury Brown and Twiss interferometer

MBE-grown Si and Si1−xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

International Nuclear Information System (INIS)

Manna, S; Aluguri, R; Katiyar, A; Ray, S K; Das, S; Laha, A; Osten, H J

2013-01-01

Si and Si 1−x Ge x quantum dots embedded within epitaxial Gd 2 O 3 grown by molecular beam epitaxy have been studied for application in floating gate memory devices. The effect of interface traps and the role of quantum dots on the memory properties have been studied using frequency-dependent capacitance–voltage and conductance–voltage measurements. Multilayer quantum dot memory comprising four and five layers of Si quantum dots exhibits a superior memory window to that of single-layer quantum dot memory devices. It has also been observed that single-layer Si 1−x Ge x quantum dots show better memory characteristics than single-layer Si quantum dots. (paper)

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Science.gov (United States)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

Energy Technology Data Exchange (ETDEWEB)

Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

2011-10-31

Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

Tuning structure in epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} thin films by using miscut substrates

Energy Technology Data Exchange (ETDEWEB)

Mietschke, M., E-mail: m.mietschke@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Dresden University of Technology, Faculty of Mechanical Science and Engineering, D-01062 Dresden (Germany); Oswald, S.; Fähler, S. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schultz, L. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Dresden University of Technology, Faculty of Mechanical Science and Engineering, D-01062 Dresden (Germany); Hühne, R. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany)

2015-08-31

Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} (PMN–PT) is one of the most promising ferroelectric material for actuator, dielectric and electrocaloric applications. However, oriented and phase pure thin films are essential to use the outstanding properties of these compounds. In this work it is demonstrated that the use of miscut substrates influences the growth mechanism leading to a significantly broader deposition window to achieve the required film quality. Therefore, epitaxial 0.68Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–0.32PbTiO{sub 3} films were grown by pulsed laser deposition on (001)-oriented single crystalline SrTiO{sub 3} (STO) substrates with a miscut angle between 0 and 15° towards the [100] direction using a conducting La{sub 0.7}Sr{sub 0.3}CoO{sub 3} buffer layer. The influence of the vicinal angle on the PMN–PT structure was studied by high resolution X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy. A nearly pure perovskite phase growth with a cube-on-cube epitaxial relationship was obtained on all miscut STO substrates, whereas a significant volume fraction of the pyrochlore phase was present on the standard substrate. Reciprocal space measurements revealed a peak split of the perovskite reflections indicating structural variants of PMN–PT with different c/a ratios. An additional tilting of the PMN–PT planes with respect to the buffer layer was observed on some samples, which might be explained with the incorporation of dislocations according to the Nagai model. Polarization loops were measured in a temperature range between room temperature and 150 °C showing a sharp drop of the remanent polarization above 65 °C on vicinal substrates. - Highlights: • Epitaxial growth of pure perovskite Pb (Mg{sub 1}/{sub 3}Nb{sub 2}/{sub 3})O{sub 3}–PbTiO{sub 3} on miscut SrTiO{sub 3}. • Significant broadening of the deposition window for pyrochlore-free films. • Dependence of the structural parameters

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

Science.gov (United States)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

Energy Technology Data Exchange (ETDEWEB)

Goto, Kaname [Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yamashita, Kenichi, E-mail: yamasita@kit.ac.jp [Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan); Yanagi, Hisao [Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Yamao, Takeshi; Hotta, Shu [Faculty of Materials Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585 (Japan)

2016-08-08

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

Science.gov (United States)

Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

2016-08-01

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ˜100 meV even in the "half-vertical cavity surface emitting lasing" microcavity structure.

Strong exciton-photon coupling in organic single crystal microcavity with high molecular orientation

International Nuclear Information System (INIS)

Goto, Kaname; Yamashita, Kenichi; Yanagi, Hisao; Yamao, Takeshi; Hotta, Shu

2016-01-01

Strong exciton-photon coupling has been observed in a highly oriented organic single crystal microcavity. This microcavity consists of a thiophene/phenylene co-oligomer (TPCO) single crystal laminated on a high-reflection distributed Bragg reflector. In the TPCO crystal, molecular transition dipole was strongly polarized along a certain horizontal directions with respect to the main crystal plane. This dipole polarization causes significantly large anisotropies in the exciton transition and optical constants. Especially the anisotropic exciton transition was found to provide the strong enhancement in the coupling with the cavity mode, which was demonstrated by a Rabi splitting energy as large as ∼100 meV even in the “half-vertical cavity surface emitting lasing” microcavity structure.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

2014-01-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

2014-09-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

NARCIS (Netherlands)

Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

2013-01-01

We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

A single theoretical framework for circular features processing in humans: orientation and direction of motion compared

Directory of Open Access Journals (Sweden)

Tzvetomir eTzvetanov

2012-05-01

Full Text Available Common computational principles underly processing of various visual features in the cortex. They are considered to create similar patterns of contextual modulations in behavioral studies for different features as orientation and direction of motion. Here, I studied the possibility that a single theoretical framework, implemented in different visual areas, of circular feature coding and processing could explain these similarities in observations. Stimuli were created that allowed direct comparison of the contextual effects on orientation and motion direction with two different psychophysical probes: changes in weak and strong signal perception. One unique simplified theoretical model of circular feature coding including only inhibitory interactions, and decoding through standard vector average, successfully predicted the similarities in the two domains, while different feature population characteristics explained well the differences in modulation on both experimental probes. These results demonstrate how a single computational principle underlies processing of various features across the cortices.

Buffer-layer enhanced crystal growth of BaB6 (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng; Tsuchimine, Nobuo; Kobayashi, Susumu; Saeki, Kazuhiko; Takezawa, Nobutaka; Mitsuhashi, Masahiko; Kaneko, Satoru; Yoshimoto, Mamoru

2012-01-01

Crystalline BaB 6 (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB 6 (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB 6 (1 0 0)/SrB 6 (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB 6 thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB 6 thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB 6 epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 × 10 -1 Ω cm at room temperature.

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

2008-01-01

Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

Simultaneous positioning and orientation of a single nano-object by flow control: theory and simulations

International Nuclear Information System (INIS)

Mathai, Pramod P; Berglund, Andrew J; Alexander Liddle, J; Shapiro, Benjamin A

2011-01-01

In this paper, we theoretically describe a method to simultaneously control both the position and orientation of single nano-objects in fluids by precisely controlling the flow around them. We develop and simulate a control law that uses electro-osmotic flow (EOF) actuation to translate and rotate rigid nano-objects in two spatial dimensions. Using EOF to control nano-objects offers advantages as compared to other approaches: a wide class of objects can be manipulated (no magnetic or electric dipole moments are needed), the object can be controlled over a long range (>100 μm) with sub-micrometer accuracy, and control may be achieved with simple polydimethylsiloxane (PDMS) devices. We demonstrate the theory and numerical solutions that will enable deterministic control of the position and orientation of a nano-object in solution, which can be used, for example, to integrate nanostructures in circuits and orient sensors to probe living cells.

Growth orientation dependence of Si doping in GaAsN

Energy Technology Data Exchange (ETDEWEB)

Han, Xiuxun, E-mail: xxhan@semi.ac.cn [Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Dong, Chen [Laboratory of Clean Energy Chemistry and Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Feng, Qiang [Optoelectronic Department, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 (Japan)

2015-02-07

The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N.

Magnetic orientation of single-walled carbon nanotubes or their composites using polymer wrapping

Directory of Open Access Journals (Sweden)

Hiroaki Yonemura et al

2008-01-01

Full Text Available The magnetic orientation of single-walled carbon nanotubes (SWNTs or the SWNT composites wrapped with polymer using poly[2-methoxy-5-(2'-ethylhexyloxy-1,4-phenylene vinylene] (MEHPPV as the conducting polymer were examined. The formation of SWNT/MEHPPV composites was confirmed by examining absorption and fluorescence spectra. The N,N-dimethylformamide solution of SWNT/MEHPPV composites or the aqueous solution of the shortened SWNTs was introduced dropwise onto a mica or glass plate. The magnetic processing of the composites or the SWNTs was carried out using a superconducting magnet with a horizontal direction (8 T. The AFM images indicated that the SWNT/MEHPPV composites or the SWNTs were oriented randomly without magnetic processing, while with magnetic processing (8 T, they were oriented with the tube axis of the composites or the SWNTs parallel to the magnetic field. In polarized absorption spectra of SWNT/MEHPPV composites on glass plates without magnetic processing, the absorbance due to semiconducting SWNT in the near-IR region in horizontal polarized light was almost the same as that in vertical polarized light. In contrast, with magnetic processing (8 T, the absorbance due to semiconducting SWNT in the horizontal polarization direction against the direction of magnetic field was stronger than that in the vertical polarization direction. Similar results were obtained from the polarized absorption spectra for the shortened SWNTs. These results of polarized absorption spectra also support the magnetic orientation of the SWNT/MEHPPV composites or the SWNTs. On the basis of a comparison of the composites and the SWNTs alone, the magnetic orientation of SWNT/MEHPPV composites is most likely ascribable to the anisotropy in susceptibilities of SWNTs.

Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Tous, Jan; Blazek, Karel; Kucera, Miroslav; Nikl, Martin; Mares, Jiri A.

2012-01-01

Very thin scintillator imaging plates have recently become of great interest. In high resolution X-ray radiography, very thin scintillator layers of about 5–20 μm are used to achieve 2D-spatial resolutions below 1 μm. Thin screens can be prepared by mechanical polishing from single crystals or by epitaxial growth on single-crystal substrates using the Liquid Phase Epitaxy technique (LPE). Other types of screens (e.g. deposited powder) do no reach required spatial resolutions. This work compares LPE-grown YAG and LuAG scintillator films doped with different rare earth ions (Cerium, Terbium and Europium). Two different fluxes were used in the LPE growth procedure. These LPE films are compared to YAG:Ce and LuAG:Ce screens made from bulk single crystals. Relative light yield was detected by a highly sensitive CCD camera. Scintillator screens were excited by a micro-focus X-ray source and the generated light was gathered by the CCD camera’s optical system. Scintillator 2D-homogeneity is examined in an X-ray imaging setup also using the CCD camera.

Out-of-plane tilted Josephson junctions of bi-epitaxial YBa{sub 2}Cu{sub 3}O {sub x} thin films on tilted-axes NdGaO{sub 3} substrates with CeO{sub 2} seeding layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, Peter B. [Institute of Physics and Technology RAS, Moscow 117218 (Russian Federation) and Department of Physics, Technical University of Denmark, Lyngby DK-2800 (Denmark)]. E-mail: pbmozh@nm.ru; Mozhaeva, Julia E. [Institute of Physics and Technology RAS, Moscow 117218 (Russian Federation); Department of Physics, Technical University of Denmark, Lyngby DK-2800 (Denmark); Bdikin, Igor K. [CICECO, University of Aveiro, Aveiro 3810-193 (Portugal); Kotelyanskii, Iosif M. [Institute of Radio Engineering and Electronics RAS, Moscow 125009 (Russian Federation); Luzanov, Valery A. [Institute of Radio Engineering and Electronics RAS, Moscow 125009 (Russian Federation); Zybtsev, Sergey G. [Institute of Radio Engineering and Electronics RAS, Moscow 125009 (Russian Federation); Hansen, Jorn Bindslev [Department of Physics, Technical University of Denmark, Lyngby DK-2800 (Denmark); Jacobsen, Claus S. [Department of Physics, Technical University of Denmark, Lyngby DK-2800 (Denmark)

2006-03-15

Bi-epitaxial heterostructures YBa{sub 2}Cu{sub 3}O {sub x}(YBCO)/CeO{sub 2}/NdGaO{sub 3} were prepared on tilted-axes NdGaO{sub 3} substrates using laser ablation technique. The heterostructures were patterned for electrical measurements using photolithography and ion-beam milling. Electrical anisotropy of the YBCO film was tested on the ion-beam etched surface. Bi-epitaxial junctions with four different orientations of the bi-epitaxial border were fabricated and studied. The measured I V curves showed flux-flow behavior with critical current density 2.5 x 10{sup 4} A/cm{sup 2} for the twist-type junctions and 1.5 x 10{sup 3} A/cm{sup 2} for [1 0 0]-tilt type junctions.

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

KAUST Repository

Shen, Youde; Turner, Stuart G.; Yang, Ping; Van Tendeloo, Gustaaf; Lebedev, Oleg I.; Wu, Tao

2014-01-01

challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

Science.gov (United States)

Fireman, M. N.; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Speck, James S.

2017-05-01

InAlN dipole diodes were developed and fabricated on both (0001) Ga-Face and (" separators="| 000 1 ¯) N-face oriented GaN on sapphire templates by molecular beam epitaxy. The orientation and direction of the InAlN polarization dipole are functions of the substrate orientation and composition, respectively. Special consideration was taken to minimize growth differences and impurity uptake during growth on these orientations of opposite polarity. Comparison of devices on similarly grown structures with In compositions in excess of 50% reveals that dipole diodes shows poorer forward bias performance and exhibited an increase in reverse bias leakage, regardless of orientation. Similarly, (0001) Ga-face oriented InAlN at a lowered 40% In composition had poor device characteristics, namely, the absence of expected exponential turn on in forward bias. By contrast, at In compositions close to 40%, (" separators="| 000 1 ¯) N-face oriented InAlN devices had excellent performance, with over five orders of magnitude of rectification and extracted barrier heights of 0.53- 0.62 eV; these values are in close agreement with simulation. Extracted ideality factors ranging from 1.08 to 1.38 on these devices are further evidence of their optimal performance. Further discussion focuses on the growth and orientation conditions that may lead to this discrepancy yet emphasizes that with proper design and growth strategy, the rectifying dipole diodes can be achieved with InAlN nitride dipole layers.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...