WorldWideScience

Sample records for single silicon wafer

  1. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  2. Fabrication of silicon condenser microphones using single wafer technology

    NARCIS (Netherlands)

    Scheeper, P.R.; van der Donk, A.G.H.; Olthuis, Wouter; Bergveld, Piet

    1992-01-01

    A condenser microphone design that can be fabricated using the sacrificial layer technique is proposed and tested. The microphone backplate is a 1-¿m plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride film with a high density of acoustic holes (120-525 holes/mm2), covered with a thin

  3. Comparison of slowness profiles of lamb wave with elastic moduli and crystal structure in single crystalline silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Min, Young Jae; Yun, Gyeong Won; Kim, Kyung Min; Roh, Yuji; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan (Korea, Republic of)

    2016-02-15

    Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

  4. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  5. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  6. Crack Detection in Single-Crystalline Silicon Wafer Using Laser Generated Lamb Wave

    Directory of Open Access Journals (Sweden)

    Min-Kyoo Song

    2013-01-01

    Full Text Available In the semiconductor industry, with increasing requirements for high performance, high capacity, high reliability, and compact components, the crack has been one of the most critical issues in accordance with the growing requirement of the wafer-thinning in recent years. Previous researchers presented the crack detection on the silicon wafers with the air-coupled ultrasonic method successfully. However, the high impedance mismatching will be the problem in the industrial field. In this paper, in order to detect the crack, we propose a laser generated Lamb wave method which is not only noncontact, but also reliable for the measurement. The laser-ultrasonic generator and the laser-interferometer are used as a transmitter and a receiver, respectively. We firstly verified the identification of S0 and A0 lamb wave modes and then conducted the crack detection under the thermoelastic regime. The experimental results showed that S0 and A0 modes of lamb wave were clearly generated and detected, and in the case of the crack detection, the estimated crack size by 6 dB drop method was almost equal to the actual crack size. So, the proposed method is expected to make it possible to detect the crack in the silicon wafer in the industrial fields.

  7. Making Porous Luminescent Regions In Silicon Wafers

    Science.gov (United States)

    Fathauer, Robert W.; Jones, Eric W.

    1994-01-01

    Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

  8. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  9. Silicon wafers for integrated circuit process

    OpenAIRE

    Leroy , B.

    1986-01-01

    Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

  10. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus

    2007-01-01

    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  11. Lamb wave propagation in monocrystalline silicon wafers

    OpenAIRE

    Fromme, P.; Pizzolato, M.; Robyr, J-L; Masserey, B.

    2018-01-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness a...

  12. Silicon waveguides produced by wafer bonding

    DEFF Research Database (Denmark)

    Poulsen, Mette; Jensen, Flemming; Bunk, Oliver

    2005-01-01

    X-ray waveguides are successfully produced employing standard silicon technology of UV photolithography and wafer bonding. Contrary to theoretical expectations for similar systems even 100 mu m broad guides of less than 80 nm height do not collapse and can be used as one dimensional waveguides...

  13. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

    Energy Technology Data Exchange (ETDEWEB)

    Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

    2017-05-08

    A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

  14. Low-cost silicon wafer dicing using a craft cutter

    KAUST Repository

    Fan, Yiqiang

    2014-05-20

    This paper reports a low-cost silicon wafer dicing technique using a commercial craft cutter. The 4-inch silicon wafers were scribed using a crafter cutter with a mounted diamond blade. The pre-programmed automated process can reach a minimum die feature of 3 mm by 3 mm. We performed this scribing process on the top polished surface of a silicon wafer; we also created a scribing method for the back-unpolished surface in order to protect the structures on the wafer during scribing. Compared with other wafer dicing methods, our proposed dicing technique is extremely low cost (lower than $1,000), and suitable for silicon wafer dicing in microelectromechanical or microfluidic fields, which usually have a relatively large die dimension. The proposed dicing technique is also usable for dicing multiple project wafers, a process where dies of different dimensions are diced on the same wafer.

  15. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

    International Nuclear Information System (INIS)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

    2014-01-01

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

  16. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Short, K.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Sol-gel bonds have been produced between smooth, clean silicon substrates by spin-coating solutions containing partially hydrolysed silicon alkoxides. The two coated substrates were assembled and the resulting sandwich fired at temperatures ranging from 60 to 600 deg. C. The sol-gel coatings were characterised using attenuated total reflectance Fourier transform infrared spectroscopy, ellipsometry, and atomic force microscopy, while the corresponding bonded specimens were investigated using scanning electron microscopy and cross-sectional transmission electron microscopy. Mechanical properties were characterised using both microindentation and tensile testing. Bonding of silicon wafers has been successfully achieved at temperatures as low as 60 deg. C. At 300 deg. C, the interfacial fracture energy was 1.55 J/m 2 . At 600 deg. C, sol-gel bonding provided superior interfacial fracture energy over classical hydrophilic bonding (3.4 J/m 2 vs. 1.5 J/m 2 ). The increase in the interfacial fracture energy is related to the increase in film density due to the sintering of the sol-gel interface with increasing temperature. The superior interfacial fracture energy obtained by sol-gel bonding at low temperature is due to the formation of an interfacial layer, which chemically bonds the two sol-gel coatings on each wafer. Application of a tensile stress on the resulting bond leads to fracture of the samples at the silicon/sol-gel interface

  17. Lamb wave propagation in monocrystalline silicon wafers.

    Science.gov (United States)

    Fromme, Paul; Pizzolato, Marco; Robyr, Jean-Luc; Masserey, Bernard

    2018-01-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness and beam skewing of the two fundamental Lamb wave modes A 0 and S 0 were investigated. Experimental measurements using contact wedge transducer excitation and laser measurement were conducted. Good agreement was found between the theoretically calculated angular dependency of the phase slowness and measurements for different propagation directions relative to the crystal orientation. Significant wave skew and beam widening was observed experimentally due to the anisotropy, especially for the S 0 mode. Explicit finite element simulations were conducted to visualize and quantify the guided wave beam skew. Good agreement was found for the A 0 mode, but a systematic discrepancy was observed for the S 0 mode. These effects need to be considered for the non-destructive testing of wafers using guided waves.

  18. Chemical polishing of epitoxial silicon wafer

    International Nuclear Information System (INIS)

    Osada, Shohei

    1978-01-01

    SSD telescopes are used for the determination of the kind and energy of charged particles produced by nuclear reactions, and are the equipments combining ΔE counters and E counters. The ΔE counter is a thin SSD which is required to be thin and homogeneous enough to get the high resolution of measurement. The SSDs for ΔE counters have so far been obtained by polishing silicon plates mechanically and chemically or by applying electrolytic polishing method on epitaxial silicon wafers, but it was very hard to obtain them. The creative etching equipment and technique developed this time make it possible to obtain thin SSDs for ΔE counters. The outline of the etching equipment and its technique are described in the report. The etching technique applied for the silicon films for ΔE counters with thickness of about 10 μm was able to be experimentally established in this study. (Kobatake, H.)

  19. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  20. Characterization of silicon-on-insulator wafers

    Science.gov (United States)

    Park, Ki Hoon

    The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

  1. Single wafer rapid thermal multiprocessing

    International Nuclear Information System (INIS)

    Saraswat, K.C.; Moslehi, M.M.; Grossman, D.D.; Wood, S.; Wright, P.; Booth, L.

    1989-01-01

    Future success in microelectronics will demand rapid innovation, rapid product introduction and ability to react to a change in technological and business climate quickly. These technological advances in integrated electronics will require development of flexible manufacturing technology for VLSI systems. However, the current approach of establishing factories for mass manufacturing of chips at a cost of more than 200 million dollars is detrimental to flexible manufacturing. The authors propose concepts of a micro factory which may be characterized by more economical small scale production, higher flexibility to accommodate many products on several processes, and faster turnaround and learning. In-situ multiprocessing equipment where several process steps can be done in sequence may be a key ingredient in this approach. For this environment to be flexible, the equipment must have ability to change processing environment, requiring extensive in-situ measurements and real time control. This paper describes the development of a novel single wafer rapid thermal multiprocessing (RTM) reactor for next generation flexible VLSI manufacturing. This reactor will combine lamp heating, remote microwave plasma and photo processing in a single cold-wall chamber, with applications for multilayer in-situ growth and deposition of dielectrics, semiconductors and metals

  2. High frequency guided wave propagation in monocrystalline silicon wafers

    OpenAIRE

    Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

    2017-01-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

  3. Tests of a silicon wafer based neutron collimator

    International Nuclear Information System (INIS)

    Cussen, L.D.; Vale, C.J.; Anderson, I.S.; Hoeghoj, P.

    2001-01-01

    A Soller slit neutron collimator has been prepared by stacking 160 μm thick single crystal silicon wafers coated on one surface with 4 μm of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators

  4. Tests of a silicon wafer based neutron collimator

    CERN Document Server

    Cussen, L D; Anderson, I S; Hoeghoj, P

    2001-01-01

    A Soller slit neutron collimator has been prepared by stacking 160 mu m thick single crystal silicon wafers coated on one surface with 4 mu m of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators.

  5. Direct Electroplating on Highly Doped Patterned Silicon Wafers

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

  6. Low-cost silicon wafer dicing using a craft cutter

    KAUST Repository

    Fan, Yiqiang; Carreno, Armando Arpys Arevalo; Li, Huawei; Foulds, Ian G.

    2014-01-01

    feature of 3 mm by 3 mm. We performed this scribing process on the top polished surface of a silicon wafer; we also created a scribing method for the back-unpolished surface in order to protect the structures on the wafer during scribing. Compared

  7. Sol-gel bonding of silicon wafers

    International Nuclear Information System (INIS)

    Barbe, C.J.; Cassidy, D.J.; Triani, G.; Latella, B.A.; Mitchell, D.R.G.; Finnie, K.S.; Bartlett, J.R.; Woolfrey, J.L.; Collins, G.A.

    2005-01-01

    Low temperature bonding of silicon wafers was achieved using sol-gel technology. The initial sol-gel chemistry of the coating solution was found to influence the mechanical properties of the resulting bonds. More precisely, the influence of parameters such as the alkoxide concentration, water-to-alkoxide molar ratio, pH, and solution aging on the final bond morphologies and interfacial fracture energy was studied. The thickness and density of the sol-gel coating were characterised using ellipsometry. The corresponding bonded specimens were investigated using attenuated total reflectance Fourier transformed infrared spectroscopy to monitor their chemical composition, infrared imaging to control bond integrity, and cross-sectional transmission electron microscopy to study their microstructure. Their interfacial fracture energy was measured using microindentation. An optimum water-to-alkoxide molar ratio of 10 and hydrolysis water at pH = 2 were found. Such conditions led to relatively dense films (> 90%), resulting in bonds with a fracture energy of 3.5 J/m 2 , significantly higher than those obtained using classical hydrophilic bonding (typically 1.5-2.5 J/m 2 ). Ageing of the coating solution was found to decrease the bond strength

  8. Coherent spin transport through a 350 micron thick silicon wafer.

    Science.gov (United States)

    Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

    2007-10-26

    We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

  9. Guided ultrasonic wave beam skew in silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2018-04-01

    In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

  10. Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

    Science.gov (United States)

    Ostapenko, S.; Tarasov, I.

    2000-04-01

    A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

  11. Preparation and characterisation of immobilised humic acid on silicon wafer

    International Nuclear Information System (INIS)

    Szabo, Gy.; Guczi, J.; Telegdi, J.; Pashalidis, I.; Szymczak, W.; Buckau, G.

    2005-01-01

    Full text of publication follows: The chemistry of the interactions of radionuclides with humic acid needs to be understood in details so that humate-mediated migration of radionuclides through the environment can be predicted. To achieve such a data in microscopic scale, several detective techniques, such as atomic force microscopy (AFM), chemical force microscopy (CFM), nuclear microprobe analysis (NMA) and X-ray photoelectron spectroscopy (XPS) can be used to measure intermolecular forces and to visualize the surface morphology. The main aim of this work was to provide humic material with specific properties in order to study with different spectroscopic techniques, the complexation behaviour of surface bound humic acid in microscopic scale. Namely, humic acid has been immobilised on silicon wafers in order to mimic surface bound humic substances in natural aquatic systems. In this communication, we present a simple protocol to immobilize humic acid on silicon wafer surface. A tri-functional silane reagent 3-amino-propyl-tri-methoxy-silane (APTES) was used to modify the surface of silicon wafers and appeared to be able to strongly attached soluble humic acid through their carboxylic groups to solid support. Characterisation of the surfaces, after any preparation steps, was done by ATR-FTIR, AFM and TOF-SIMS. These methods have proved that the humic acid forms a relatively homogeneous layer on the wafers. Immobilisation of humic acid on silicon wafer was further proved by binding isotherm of Am/Nd. (authors)

  12. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  13. Hydrogen Incorporation during Aluminium Anodisation on Silicon Wafer Surfaces

    International Nuclear Information System (INIS)

    Lu, Pei Hsuan Doris; Strutzberg, Hartmuth; Wenham, Stuart; Lennon, Alison

    2014-01-01

    Hydrogen can act to reduce recombination at silicon surfaces for solar cell devices and consequently the ability of dielectric layers to provide a source of hydrogen for this purpose is of interest. However, due to the ubiquitous nature of hydrogen and its mobility, direct measurements of hydrogen incorporation in dielectric layers are challenging. In this paper, we report the use of secondary ion mass spectrometry measurements to show that deuterium from an electrolyte can be incorporated in an anodic aluminium oxide (AAO) layer and be introduced into an underlying amorphous silicon layer during anodisation of aluminium on silicon wafers. After annealing at 400 °C, the concentration of deuterium in the AAO was reduced by a factor of two, as the deuterium was re-distributed to the interface between the amorphous silicon and AAO and to the amorphous silicon. The assumption that hydrogen, from an aqueous electrolyte, could be similarly incorporated in AAO, is supported by the observation that the hydrogen content in the underlying amorphous silicon was increased by a factor of ∼ 3 after anodisation. Evidence for hydrogen being introduced into crystalline silicon after aluminium anodisation was provided by electrochemical capacitance voltage measurements indicating boron electrical deactivation in the underlying crystalline silicon. If introduced hydrogen can electrically deactivate dopant atoms at the surface, then it is reasonable to assume that it could also deactivate recombination-active states at the crystalline silicon interface therefore enabling higher minority carrier lifetimes in the silicon wafer

  14. First thin AC-coupled silicon strip sensors on 8-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

    2016-09-11

    The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

  15. Cohesive zone model for direct silicon wafer bonding

    Science.gov (United States)

    Kubair, D. V.; Spearing, S. M.

    2007-05-01

    Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

  16. Surface etching technologies for monocrystalline silicon wafer solar cells

    Science.gov (United States)

    Tang, Muzhi

    With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

  17. DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

    Directory of Open Access Journals (Sweden)

    V. A. Solodukha

    2016-01-01

    Full Text Available The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield intensity. In order to measure the disrupted layer with the help of Auger spectroscopy it is necessary to determine dependence of the released Auger electron amount on sputtering time (profile and then the dependence is analyzed. Silicon amount in the disrupted layer is less than in the volume. While going deeper the disruptive layer is decreasing that corresponds to an increase of atom density in a single layer. The essence of the method lies in the fact the disruptive layer is removed by ion beam sputtering and detection of interface region is carried out with the help of registration of the Auger electron yield intensity from the sputtered surface up to the moment when it reaches the value which is equal to the Auger electron yield intensity for single-crystal silicon. While removing surface silicon layers the registration of the Auger electron yield intensity from silicon surface makes it possible to control efficiently a presence of the disrupted layer on the silicon wafer surface. In this case depth control locality is about 1.0 nm due to some peculiarities of Auger spectroscopy method. The Auger electron yield intensity is determined automatically while using Auger spectrometer and while removing the disrupted layer the intensity is gradually increasing. Depth of the disrupted layer is determined by measuring height of the step which has been formed as a result of removal of the disrupted layer from the silicon wafer surface. Auger spectroscopy methods ensures an efficient depth control surface disruptions at the manufacturing stages of silicon wafers and integrated circuits. The depth measurement range of disruptions constitutes 0.001–1.000 um.

  18. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  19. Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

    NARCIS (Netherlands)

    Fazal, I.; Berenschot, Johan W.; de Boer, J.H.; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2005-01-01

    The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing

  20. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  1. Denuded zone in Czochralski silicon wafer with high carbon content

    International Nuclear Information System (INIS)

    Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

    2006-01-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

  2. Denuded zone in Czochralski silicon wafer with high carbon content

    Science.gov (United States)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

    2006-12-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

  3. Peptide and protein loading into porous silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Prestidge, C.A.; Barnes, T.J.; Mierczynska-Vasilev, A.; Kempson, I.; Peddie, F. [Ian Wark Research Institute, University of South Australia, Mawson Lakes (Australia); Barnett, C. [Medica Ltd, Malvern, Worcestershire, UK WR14 3SZ (United Kingdom)

    2008-02-15

    The influence of peptide/protein size and hydrophobicity on the physical and chemical aspects of loading within porous silicon (pSi) wafer samples has been determined using Atomic Force Microscopy (AFM) and Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). Both Gramicidin A (a small hydrophobic peptide) and Papain (a larger hydrophilic protein) were observed (ToF-SIMS) to penetrate across the entire pSi layer, even at low loading levels. AFM surface imaging of pSi wafers during peptide/protein loading showed that surface roughness increased with Papain loading, but decreased with Gramicidin A loading. For Papain, the loading methodology was also found to influence loading efficiency. These differences indicate more pronounced surface adsorption of Papain. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Contacting graphene in a 200 mm wafer silicon technology environment

    Science.gov (United States)

    Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

    2018-06-01

    Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

  5. Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

    Science.gov (United States)

    Kulshreshtha, Prashant Kumar

    This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent

  6. Residual stress in silicon wafer using IR polariscope

    Science.gov (United States)

    Lu, Zhijia; Wang, Pin; Asundi, Anand

    2008-09-01

    The infrared phase shift polariscope (IR-PSP) is a full-field optical technique for stress analysis in Silicon wafers. Phase shift polariscope is preferred to a conventional polariscope, as it can provide quantitative information of the normal stress difference and the shear stress in the specimen. The method is based on the principles of photoelasticity, in which stresses induces temporary birefringence in materials which can be quantitatively analyzed using a phase shift polariscope. Compared to other stress analysis techniques such as x-ray diffraction or laser scanning, infrared photoelastic stress analysis provides full-field information with high resolution and in near real time. As the semiconductor fabrication is advancing, larger wafers, thinner films and more compact packages are being manufactured. This results in a growing demand of process control. Residual stress exist in silicon during semiconductor fabrication and these stresses may make cell processing difficult or even cause the failure of the silicon. Reducing these stresses would improve manufacturability and reliability. Therefore stress analysis is essential to trace the root cause of the stresses. The polariscope images are processed using MATLAB and four-step phase shifting method to provide quantitative as well as qualitative information regarding the residual stress of the sample. The system is calibrated using four-point bend specimen and then the residual stress distribution in a MEMS sample is shown.

  7. Ambient plasma treatment of silicon wafers for surface passivation recovery

    Science.gov (United States)

    Ge, Jia; Prinz, Markus; Markert, Thomas; Aberle, Armin G.; Mueller, Thomas

    2017-08-01

    In this work, the effect of an ambient plasma treatment powered by compressed dry air on the passivation quality of silicon wafers coated with intrinsic amorphous silicon sub-oxide is investigated. While long-time storage deteriorates the effective lifetime of all samples, a short ambient plasma treatment improves their passivation qualities. By studying the influence of the plasma treatment parameters on the passivation layers, an optimized process condition was identified which even boosted the passivation quality beyond its original value obtained immediately after deposition. On the other hand, the absence of stringent requirement on gas precursors, vacuum condition and longtime processing makes the ambient plasma treatment an excellent candidate to replace conventional thermal annealing in industrial heterojunction solar cell production.

  8. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  9. Locally-enhanced light scattering by a monocrystalline silicon wafer

    Directory of Open Access Journals (Sweden)

    Li Ma

    2018-03-01

    Full Text Available We study the optical properties of light scattering by a monocrystalline silicon wafer, by using transparent material to replicate its surface structure and illuminating a fabricated sample with a laser source. The experimental results show that the scattering field contains four spots of concentrated intensity with high local energy, and these spots are distributed at the four vertices of a square with lines of intensity linking adjacent spots. After discussing simulations of and theory about the formation of this light scattering, we conclude that the scattering field is formed by the effects of both geometrical optics and physical optics. Moreover, we calculate the central angle of the spots in the light field, and the result indicates that the locally-enhanced intensity spots have a definite scattering angle. These results may possibly provide a method for improving energy efficiency within mono-Si based solar cells.

  10. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

    Science.gov (United States)

    Sun, Q. M.; Melnikov, A.; Mandelis, A.

    2015-06-01

    Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

  12. Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

    International Nuclear Information System (INIS)

    Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

    1999-01-01

    The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

  13. Electronic properties of interfaces produced by silicon wafer hydrophilic bonding

    Energy Technology Data Exchange (ETDEWEB)

    Trushin, Maxim

    2011-07-15

    The thesis presents the results of the investigations of electronic properties and defect states of dislocation networks (DNs) in silicon produced by wafers direct bonding technique. A new insight into the understanding of their very attractive properties was succeeded due to the usage of a new, recently developed silicon wafer direct bonding technique, allowing to create regular dislocation networks with predefined dislocation types and densities. Samples for the investigations were prepared by hydrophilic bonding of p-type Si (100) wafers with same small misorientation tilt angle ({proportional_to}0.5 ), but with four different twist misorientation angles Atw (being of < , 3 , 6 and 30 , respectively), thus giving rise to the different DN microstructure on every particular sample. The main experimental approach of this work was the measurements of current and capacitance of Schottky diodes prepared on the samples which contained the dislocation network at a depth that allowed one to realize all capabilities of different methods of space charge region spectroscopy (such as CV/IV, DLTS, ITS, etc.). The key tasks for the investigations were specified as the exploration of the DN-related gap states, their variations with gradually increasing twist angle Atw, investigation of the electrical field impact on the carrier emission from the dislocation-related states, as well as the establishing of the correlation between the electrical (DLTS), optical (photoluminescence PL) and structural (TEM) properties of DNs. The most important conclusions drawn from the experimental investigations and theoretical calculations can be formulated as follows: - DLTS measurements have revealed a great difference in the electronic structure of small-angle (SA) and large-angle (LA) bonded interfaces: dominating shallow level and a set of 6-7 deep levels were found in SA-samples with Atw of 1 and 3 , whereas the prevalent deep levels - in LA-samples with Atw of 6 and 30 . The critical twist

  14. Surface modification of silicon wafer by grafting zwitterionic polymers to improve its antifouling property

    Science.gov (United States)

    Sun, Yunlong; Chen, Changlin; Xu, Heng; Lei, Kun; Xu, Guanzhe; Zhao, Li; Lang, Meidong

    2017-10-01

    Silicon (111) wafer was modified by triethoxyvinylsilane containing double bond as an intermedium, and then P4VP (polymer 4-vinyl pyridine) brush was "grafted" onto the surface of silicon wafer containing reactive double bonds by adopting the "grafting from" way and Si-P4VP substrate (silicon wafer grafted by P4VP) was obtained. Finally, P4VP brush of Si-P4VP substrate was modified by 1,3-propanesulfonate fully to obtain P4VP-psl brush (zwitterionic polypyridinium salt) and the functional Si-P4VP-psl substrate (silicon wafer grafted by zwitterionic polypyridinium salt based on polymer 4-vinyl pyridine) was obtained successfully. The antifouling property of the silicon wafer, the Si-P4VP substrate and the Si-P4VP-psl substrate was investigated by using bovine serum albumin, mononuclear macrophages (RAW 264.7) and Escherichia coli (E. coli) ATTC25922 as model bacterium. The results showed that compared with the blank sample-silicon wafer, the Si-P4VP-psl substrate had excellent anti-adhesion ability against bovine serum albumin, cells and bacterium, due to zwitterionic P4VP-psl brush (polymer 4-vinyl pyridine salt) having special functionality like antifouling ability on biomaterial field.

  15. Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

    International Nuclear Information System (INIS)

    Reznicek, A.; Scholz, R.; Senz, S.; Goesele, U.

    2003-01-01

    Wafers of Czochralski-grown silicon were bonded hydrophilically, hydrophobically and in ultrahigh vacuum (UHV) at room temperature. Wafers bonded hydrophilically adhere together by hydrogen bonds, those bonded hydrophobically by van der Waals forces and UHV-bonded ones by covalent bonds. Annealing the pre-bonded hydrophilic and hydrophobic wafer pairs in argon for 2 h at different temperatures increases the initially low bonding energy. UHV-bonded wafer pairs were also annealed to compare the results. Transmission electron microscopy (TEM) investigations show nano-voids at the interface. The void density depends on the initial bonding strength. During annealing the shape, coverage and density of the voids change significantly

  16. Synchrotron radiation total reflection x-ray fluorescence analysis; of polymer coated silicon wafers

    International Nuclear Information System (INIS)

    Brehm, L.; Kregsamer, P.; Pianetta, P.

    2000-01-01

    It is well known that total reflection x-ray fluorescence (TXRF) provides an efficient method for analyzing trace metal contamination on silicon wafer surfaces. New polymeric materials used as interlayer dielectrics in microprocessors are applied to the surface of silicon wafers by a spin-coating process. Analysis of these polymer coated wafers present a new challenge for TXRF analysis. Polymer solutions are typically analyzed for bulk metal contamination prior to application on the wafer using inductively coupled plasma mass spectrometry (ICP-MS). Questions have arisen about how to relate results of surface contamination analysis (TXRF) of a polymer coated wafer to bulk trace analysis (ICP-MS) of the polymer solutions. Experiments were done to explore this issue using synchrotron radiation (SR) TXRF. Polymer solutions were spiked with several different concentrations of metals. These solutions were applied to silicon wafers using the normal spin-coating process. The polymer coated wafers were then measured using the SR-TXRF instrument set-up at the Stanford Synchrotron Radiation Laboratory (SSRL). Several methods of quantitation were evaluated. The best results were obtained by developing calibration curves (intensity versus ppb) using the spiked polymer coated wafers as standards. Conversion of SR-TXRF surface analysis results (atoms/cm 2 ) to a volume related concentration was also investigated. (author)

  17. Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers

    International Nuclear Information System (INIS)

    Belyaev, A.; Polupan, O.; Dallas, W.; Ostapenko, S.; Hess, D.; Wohlgemuth, J.

    2006-01-01

    An experimental approach for fast crack detection and length determination in full-size solar-grade crystalline silicon wafers using a resonance ultrasonic vibrations (RUV) technique is presented. The RUV method is based on excitation of the longitudinal ultrasonic vibrations in full-size wafers. Using an external piezoelectric transducer combined with a high sensitivity ultrasonic probe and computer controlled data acquisition system, real-time frequency response analysis can be accomplished. On a set of identical crystalline Si wafers with artificially introduced periphery cracks, it was demonstrated that the crack results in a frequency shift in a selected RUV peak to a lower frequency and increases the resonance peak bandwidth. Both characteristics were found to increase with the length of the crack. The frequency shift and bandwidth increase serve as reliable indicators of the crack appearance in silicon wafers and are suitable for mechanical quality control and fast wafer inspection

  18. Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

    Science.gov (United States)

    Miki, N.; Spearing, S. M.

    2003-11-01

    Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is quantified by the apparent bonding energy, and the surface morphology via the bearing ratio, which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE, HF:NH4F=1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished "monitor" wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ˜1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature, which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

  19. The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

    Science.gov (United States)

    Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

    2017-02-01

    The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

  20. 120 mm Single-crystalline perovskite and wafers: towards viable applications

    Institute of Scientific and Technical Information of China (English)

    Yucheng Liu; Bo Wang; Qingbo Wei; Fengwei Xiao; Haibo Fan; Hao Deng; Liangping Deng; Shengzhong (Frank) Liu; Xiaodong Ren; Jing Zhang; Zhou Yang; Dong Yang; Fengyang Yu; Jiankun Sun; Changming Zhao; Zhun Yao

    2017-01-01

    As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells,it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics,optoelectronics,lasers,photodetectors,light emitting diodes (LEDs),etc.Here we report a method to grow large single-crystalline perovskites including single-halide crystals:CH3NH3PbX3 (X=Ⅰ,Br,Cl),and dual-halide ones:CH3NH3Pb(ClxBr1-x)3 and CH3NH3Pb(BrxI1-x)3,with the largest crystal being 120 mm in length.Meanwhile,we have advanced a process to slice the large perovskite crystals into thin wafers.It is found that the wafers exhibit remarkable features:(1) its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films (MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as 910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 ℃,the wafer is stable at high temperature up to 270 ℃;(5) when exposed to high humidity (75% RH),MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart.A few electronic devices have been fabricated using the crystalline wafers.Among them,the Hall test gives low carrier concentration with high mobility.The trap-state density is measured much lower than common semiconductors.Moreover,the large SC-wafer is found particularly useful for mass production of integrated circuits.By adjusting the halide composition,both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm.It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites.With fewer trap states,high mobility,broader absorption,and humidity resistance,it is

  1. Wafer scale nano-membrane supported on a silicon microsieve using thin-film transfer technology

    NARCIS (Netherlands)

    Unnikrishnan, S.; Jansen, Henricus V.; Berenschot, Johan W.; Elwenspoek, Michael Curt

    A new micromachining method to fabricate wafer scale nano-membranes is described. The delicate thin-film nano-membrane is supported on a robust silicon microsieve fabricated by plasma etching. The silicon sieve is micromachined independently of the thin-film, which is later transferred onto it by

  2. Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

    Science.gov (United States)

    Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

    2014-05-13

    The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

  3. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang, Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-12-10

    To develop x-ray mirrors for micropore optics, smooth silicon (111) sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 microm wide (111) sidewalls was fabricated using a 220 microm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time, x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements.

  4. Micropore x-ray optics using anisotropic wet etching of (110) silicon wafers

    International Nuclear Information System (INIS)

    Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Mitsuda, Kazuhisa; Hoshino, Akio; Ishisaki, Yoshitaka; Yang Zhen; Takano, Takayuki; Maeda, Ryutaro

    2006-01-01

    To develop x-ray mirrors for micropore optics, smooth silicon (111)sidewalls obtained after anisotropic wet etching of a silicon (110) wafer were studied. A sample device with 19 μm wide (111) sidewalls was fabricated using a 220 μm thick silicon (110) wafer and potassium hydroxide solution. For what we believe to be the first time,x-ray reflection on the (111) sidewalls was detected in the angular response measurement. Compared to ray-tracing simulations, the surface roughness of the sidewalls was estimated to be 3-5 nm, which is consistent with the atomic force microscope and the surface profiler measurements

  5. Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

    KAUST Repository

    Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

    2014-01-01

    This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

  6. Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

    KAUST Repository

    Yang, Xiaoming

    2014-10-01

    This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

  7. Surface evolution and stability transition of silicon wafer subjected to nano-diamond grinding

    Directory of Open Access Journals (Sweden)

    Shisheng Cai

    2017-03-01

    Full Text Available In order to obtain excellent physical properties and ultrathin devices, thinning technique plays an important role in semiconductor industry with the rapid development of wearable electronic devices. This study presents a physical nano-diamond grinding technique without any chemistry to obtain ultrathin silicon substrate. The nano-diamond with spherical shape repeats nano-cutting and penetrating surface to physically etch silicon wafer during grinding process. Nano-diamond grinding induces an ultrathin “amorphous layer” on silicon wafer and thus the mismatch strain between the amorphous layer and substrate leads to stability transition from the spherical to non-spherical deformation of the wafer. Theoretical model is proposed to predict and analyze the deformation of amorphous layer/silicon substrate system. Furthermore, the deformation bifurcation behavior of amorphous layer/silicon substrate system is analyzed. As the mismatch strain increases or thickness decreases, the amorphous layer/silicon substrate system may transit to non-spherical deformation, which is consistent to the experimental results. The amorphous layer stresses are also obtained to predict the damage of silicon wafer.

  8. Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

    Science.gov (United States)

    Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

    2017-08-01

    Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

  9. Uniformity across 200 mm silicon wafers printed by nanoimprint lithography

    International Nuclear Information System (INIS)

    Gourgon, C; Perret, C; Tallal, J; Lazzarino, F; Landis, S; Joubert, O; Pelzer, R

    2005-01-01

    Uniformity of the printing process is one of the key parameters of nanoimprint lithography. This technique has to be extended to large size wafers to be useful for several industrial applications, and the uniformity of micro and nanostructures has to be guaranteed on large surfaces. This paper presents results of printing on 200 mm diameter wafers. The residual thickness uniformity after printing is demonstrated at the wafer scale in large patterns (100 μm), in smaller lines of 250 nm and in sub-100 nm features. We show that a mould deformation occurs during the printing process, and that this deformation is needed to guarantee printing uniformity. However, the mould deformation is also responsible for the potential degradation of the patterns

  10. Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

    Science.gov (United States)

    Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

    2014-07-21

    Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

  11. Friction mechanisms of silicon wafer and silicon wafer coated with diamond-like carbon film and two monolayers

    International Nuclear Information System (INIS)

    Singh, R. Arvind; Yoon, Eui Sung; Han, Hung Gu; Kong, Ho Sung

    2006-01-01

    The friction behaviour of Si-wafer, Diamond-Like Carbon (DLC) and two Self-Assembled Monolayers(SAMs) namely DiMethylDiChlorosilane (DMDC) and DiPhenyl-DiChlorosilane (DPDC) coated on Si-wafer was studied under loading conditions in milli-Newton (mN) range. Experiments were performed using a ball-on-flat type reciprocating micro-tribo tester. Glass balls with various radii 0.25 mm, 0.5 mm and 1 mm were used. The applied normal load was in the range of 1.5 mN to 4.8 mN. Results showed that the friction increased with the applied normal load in the case of all the test materials. It was also observed that friction was affected by the ball size. Friction increased with the increase in the ball size in the case of Si-wafer. The SAMs also showed a similar trend, but had lower values of friction than those of Si-wafer. Interestingly, for DLC it was observed that friction decreased with the increase in the ball size. This distinct difference in the behavior of friction in DLC was attributed to the difference in the operating mechanism. It was observed that Si-wafer and DLC exhibited wear, whereas wear was absent in the SAMs. Observations showed that solid-solid adhesion was dominant in Si-wafer, while plowing in DLC. The wear in these two materials significantly influenced their friction. In the case of SAMs their friction behaviour was largely influenced by the nature of their molecular chains

  12. Uncertainty evaluation of thickness and warp of a silicon wafer measured by a spectrally resolved interferometer

    Science.gov (United States)

    Praba Drijarkara, Agustinus; Gergiso Gebrie, Tadesse; Lee, Jae Yong; Kang, Chu-Shik

    2018-06-01

    Evaluation of uncertainty of thickness and gravity-compensated warp of a silicon wafer measured by a spectrally resolved interferometer is presented. The evaluation is performed in a rigorous manner, by analysing the propagation of uncertainty from the input quantities through all the steps of measurement functions, in accordance with the ISO Guide to the Expression of Uncertainty in Measurement. In the evaluation, correlation between input quantities as well as uncertainty attributed to thermal effect, which were not included in earlier publications, are taken into account. The temperature dependence of the group refractive index of silicon was found to be nonlinear and varies widely within a wafer and also between different wafers. The uncertainty evaluation described here can be applied to other spectral interferometry applications based on similar principles.

  13. Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

    Science.gov (United States)

    Franta, Daniel; Franta, Pavel; Vohánka, Jiří; Čermák, Martin; Ohlídal, Ivan

    2018-05-01

    Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable for this purpose. Because the linear thermal expansion of crystalline silicon is known, the temperatures of the wafers can be determined with high precision from the evolution of the interference patterns at elevated temperatures.

  14. Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

    Science.gov (United States)

    Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

    2015-03-30

    A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

  15. Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

    International Nuclear Information System (INIS)

    Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

    2006-01-01

    The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

  16. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  17. Sample pretreatment for the determination of metal impurities in silicon wafer

    International Nuclear Information System (INIS)

    Chung, H. Y.; Kim, Y. H.; Yoo, H. D.; Lee, S. H.

    1999-01-01

    The analytical results obtained by microwave digestion and acid digestion methods for sample pretreatment to determine metal impurities in silicon wafer by inductively coupled plasma--mass spectrometry(ICP-MS) were compared. In order to decompose the silicon wafer, a mixed solution of HNO 3 and HF was added to the sample and the metal elements were determined after removing the silicon matrix by evaporating silicon in the form of Si-F. The recovery percentages of Ni, Cr and Fe were found to be 95∼106% for both microwave digestion and acid digestion methods. The recovery percentage of Cu obtained by the acid digestion method was higher than that obtained by the microwave digestion method. For Zn, however, the microwave digestion method gave better result than the acid digestion method. Fe was added to a silicon wafer using a spin coater. The concentration of Fe in this sample was determined by ICP-MS, and the same results were obtained in the two pretreatment methods

  18. Large-aperture focusing of x rays with micropore optics using dry etching of silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Moriyama, Teppei; Ogawa, Tomohiro; Kakiuchi, Takuya; Mitsuishi, Ikuyuki; Mitsuda, Kazuhisa; Aoki, Tatsuhiko; Morishita, Kohei; Nakajima, Kazuo

    2012-03-01

    Large-aperture focusing of Al K(α) 1.49 keV x-ray photons using micropore optics made from a dry-etched 4 in. (100 mm) silicon wafer is demonstrated. Sidewalls of the micropores are smoothed with high-temperature annealing to work as x-ray mirrors. The wafer is bent to a spherical shape to collect parallel x rays into a focus. Our result supports that this new type of optics allows for the manufacturing of ultralight-weight and high-performance x-ray imaging optics with large apertures at low cost. © 2012 Optical Society of America

  19. Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

    Science.gov (United States)

    Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

    1986-01-01

    The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

  20. Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers

    International Nuclear Information System (INIS)

    Amer, M.S.; El-Ashry, M.A.; Dosser, L.R.; Hix, K.E.; Maguire, J.F.; Irwin, Bryan

    2005-01-01

    Laser micromachining has proven to be a very successful tool for precision machining and microfabrication with applications in microelectronics, MEMS, medical device, aerospace, biomedical, and defense applications. Femtosecond (FS) laser micromachining is usually thought to be of minimal heat-affected zone (HAZ) local to the micromachined feature. The assumption of reduced HAZ is attributed to the absence of direct coupling of the laser energy into the thermal modes of the material during irradiation. However, a substantial HAZ is thought to exist when machining with lasers having pulse durations in the nanosecond (NS) regime. In this paper, we compare the results of micromachining a single crystal silicon wafer using a 150-femtosecond and a 30-nanosecond lasers. Induced stress and amorphization of the silicon single crystal were monitored using micro-Raman spectroscopy as a function of the fluence and pulse duration of the incident laser. The onset of average induced stress occurs at lower fluence when machining with the femtosecond pulse laser. Induced stresses were found to maximize at fluence of 44 J cm -2 and 8 J cm -2 for nanosecond and femtosecond pulsed lasers, respectively. In both laser pulse regimes, a maximum induced stress is observed at which point the induced stress begins to decrease as the fluence is increased. The maximum induced stress was comparable at 2.0 GPa and 1.5 GPa for the two lasers. For the nanosecond pulse laser, the induced amorphization reached a plateau of approximately 20% for fluence exceeding 22 J cm -2 . For the femtosecond pulse laser, however, induced amorphization was approximately 17% independent of the laser fluence within the experimental range. These two values can be considered nominally the same within experimental error. For femtosecond laser machining, some effect of the laser polarization on the amount of induced stress and amorphization was also observed

  1. Micro-spectroscopy on silicon wafers and solar cells

    Directory of Open Access Journals (Sweden)

    Gundel Paul

    2011-01-01

    Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

  2. Qualification of multi-crystalline silicon wafers by optical imaging for industrial use

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, G.J.M.; Van der Borg, N.J.C.M.; Manshanden, P.; De Bruijne, M.; Bende, E.E. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    We have developed a method to qualify multi-crystalline silicon (mc-Si) wafers that are being used in a production process. An optical image of an etched wafer is made. This etching can be a standard industrial acid etching for mc-Si wafers as is commonly used for saw damage removal and simultaneous iso-texturing. Digital image processing is then applied to identify the number of dislocations and their distribution over the wafer. This information is used as input for a cell performance prediction model, where the performance is characterized by the open circuit voltage (Voc) or the efficiency. The model can include various levels of sophistication, i.e. from using an average density of dislocations to the full spatial resolution of the dislocations in a 2D simulation that includes also the metallization pattern on the cell. The predicted performance is then evaluated against pre-selected criteria. The possibility to apply this optical qualification method in an initial stage in the production enables early rejection of the wafers, further tailoring of the cell production process or identification of instabilities in the production process.

  3. External self-gettering of nickel in float zone silicon wafers

    Science.gov (United States)

    Gay, N.; Martinuzzi, S.

    1997-05-01

    During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni-Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source.

  4. Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

    Science.gov (United States)

    Hashmi, Galib; Hasanuzzaman, Muhammad; Basher, Mohammad Khairul; Hoq, Mahbubul; Rahman, Md. Habibur

    2018-06-01

    Implementing texturization process on the monocrystalline silicon substrate reduces reflection and enhances light absorption of the substrate. Thus texturization is one of the key elements to increase the efficiency of solar cell. Considering as-cut monocrystalline silicon wafer as base substrate, in this work different concentrations of Na2CO3 and NaHCO3 solution, KOH-IPA (isopropyl alcohol) solution and tetramethylammonium hydroxide solution with different time intervals have been investigated for texturization process. Furthermore, saw damage removal process was conducted with 10% NaOH solution, 20 wt% KOH-13.33 wt% IPA solution and HF/nitric/acetic acid solution. The surface morphology of saw damage, saw damage removed surface and textured wafer were observed using optical microscope and field emission scanning electron microscopy. Texturization causes pyramidal micro structures on the surface of (100) oriented monocrystalline silicon wafer. The height of the pyramid on the silicon surface varies from 1.5 to 3.2 µm and the inclined planes of the pyramids are acute angle. Contact angle value indicates that the textured wafer's surface fall in between near-hydrophobic to hydrophobic range. With respect to base material absolute reflectance 1.049-0.75% within 250-800 nm wavelength region, 0.1-0.026% has been achieved within the same wavelength region when textured with 0.76 wt% KOH-4 wt% IPA solution for 20 min. Furthermore, an alternative route of using 1 wt% Na2CO3-0.2 wt% NaHCO3 solution for 50 min has been exploited in the texturization process.

  5. An attempt to specify thermal history in CZ silicon wafers and possibilities for its modification

    International Nuclear Information System (INIS)

    Kissinger, G.; Sattler, A.; Mueller, T.; Ammon, W. von

    2007-01-01

    The term thermal history of silicon wafers represents the whole variety of process parameters of crystal growth. The aim of this contribution is an attempt to specify thermal history by one parameter that is directly correlated to the bulk microdefect density. The parameter that reflects thermal history and correlates it with nucleation of oxide precipitates is the concentration of VO 2 complexes. The VO 2 concentration in silicon wafers is too low to be measured by FTIR but it can be obtained from the loss of interstitial oxygen during a standardized thermal treatment. Based on this, the vacancy concentration frozen during crystal cooling in the ingot can be calculated. RTA treatments above 1150 deg. C create a well defined level of the VO 2 concentration in silicon wafers. This means that a well controlled modification of the thermal history is possible. We also investigated the kinetics of reduction of the as-grown excess VO 2 concentration during RTA treatments at 950 deg. C and 1050 deg. C and the effectiveness of this attempt to totally delete the thermal history

  6. Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

    Science.gov (United States)

    Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

    2018-01-01

    Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

  7. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    Energy Technology Data Exchange (ETDEWEB)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  8. A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

    International Nuclear Information System (INIS)

    Annamalai, N.K.; Bockman, J.F.; McGruer, N.E.; Chapski, J.

    1990-01-01

    The current through the buried oxides of single and multiple implant SIMOX and bond and etch back silicon-on-insulator (BESOI) wafers were measured as a function of radiation dose. From these measurements, conductivity and static capacitances were derived. High frequency capacitances were also measured. Leakage current through the buried oxide of multiple implant SIMOX is considerably less than that of single implant SIMOX (more than an order of magnitude). High frequency and static capacitances, as a function of total dose, were used to study the buried oxide---top silicon interface and the buried oxide---bottom silicon interface. Multiple implant had fewer interface traps than single implant at pre-rad and after irradiation

  9. Advanced single-wafer sequential multiprocessing techniques for semiconductor device fabrication

    International Nuclear Information System (INIS)

    Moslehi, M.M.; Davis, C.

    1989-01-01

    Single-wafer integrated in-situ multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn- around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/Ge x Si 1 - x /Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications

  10. Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system

    International Nuclear Information System (INIS)

    Rosler, R.S.; Mendonca, J.; Rice, M.J. Jr.

    1988-01-01

    Several workers have recently begun using silane as a high-rate, low-temperature alternative to hydrogen for the reduction of WF 6 in the chemical vapor deposition of W. The deposition and film characteristics of both selective and blanket W using this new chemistry are explored in a radiantly heated single wafer system using closed-loop temperature control with a thermocouple in direct contact with the backside of the wafer. Selective W deposition rates of up to 1.5 μm/min were measured over the temperature range 250--550 0 C with blanket W rates typically 2--5 x lower. Resistivity is in the 10--15 μΩcm range at 300 0 C for SiH 4 /WF 6 ratios of 0.2 to 1.0, while above 400 0 C the range is 7.5--8.5 μΩcm. Si content in the W films is quite low at 10 16 to 10 17 atoms/cm 3 . Adhesion to silicon is excellent at temperatures of 350 0 C and above. Selective W using SiH 4 reduction for doped silicon contact fill shows none of the consumption or encroachment problems common to H 2 reduction, although selectivity is more sensitive. Contact resistance for p + and n + silicon contacts are comparable to aluminum controls and to previously published data. Blanket deposition into narrow geometries gives ≥0% step coverage and without keyholes in the 250--450 0 C deposition temperature range. For low-SiH 4 flows, deposition at 500 0 C causes small keyholes, while at 550 0 C even larger keyholes result. At higher SiH 4 flows, keyholes are typically not seen from 250 to 550 0 C

  11. Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

    International Nuclear Information System (INIS)

    Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

    2002-01-01

    Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

  12. Non-axisymmetric flexural vibrations of free-edge circular silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, A.V., E-mail: dmitriev@hbar.phys.msu.ru; Gritsenko, D.S.; Mitrofanov, V.P., E-mail: mitr@hbar.phys.msu.ru

    2014-02-07

    Non-axisymmetric flexural vibrations of circular silicon (111) wafers are investigated. The modes with azimuthal index 2⩽k⩽30 are electrostatically excited and monitored by a capacitive sensor. The splitting of the mode frequencies associated with imperfection of the wafer is observed. The measured loss factors for the modes with 6≲k≲26 are close to those calculated according to the thermoelastic damping theory, while clamping losses likely dominate for k≲6, and surface losses at the level of inverse Q-factor Q{sup −1}≈4×10{sup −6} prevail for the modes with large k. The modes demonstrate nonlinear behavior of mainly geometrical origin at large amplitudes.

  13. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    Science.gov (United States)

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  14. The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p—n-junctions

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2012-02-01

    Full Text Available A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package. The dependence of solar cell characteristics on the silicon wafer thickness is investigated for a wide range of values.

  15. Automated and inexpensive method to manufacture solid- state nanopores and micropores in robust silicon wafers

    International Nuclear Information System (INIS)

    Vega, M; Lasorsa, C; Lerner, B; Perez, M; Granell, P

    2016-01-01

    In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by neutralization etchant (KOH) with a strong acid (HCl). Thus, a local neutralization is produced around the nanopore, which stops the silicon etching. The etching process was performed with 7M KOH at 80°C, where 1.23µm/min etching speed was obtained, similar to those published in literature. The control of the pore formation with the braking acid method was done using 12M HCl and different extreme conditions: i) at 25°C, ii) at 80°C and iii) at 80°C applying an electric potential. In these studies, it was found that nanopores and micropores can be obtained automatically and at a low cost. Additionally, the process was optimized to obtain clean silicon wafers after the pore fabrication process. This method opens the possibility for an efficient scale-up from laboratory production. (paper)

  16. Automated and inexpensive method to manufacture solid- state nanopores and micropores in robust silicon wafers

    Science.gov (United States)

    Vega, M.; Granell, P.; Lasorsa, C.; Lerner, B.; Perez, M.

    2016-02-01

    In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by neutralization etchant (KOH) with a strong acid (HCl). Thus, a local neutralization is produced around the nanopore, which stops the silicon etching. The etching process was performed with 7M KOH at 80°C, where 1.23µm/min etching speed was obtained, similar to those published in literature. The control of the pore formation with the braking acid method was done using 12M HCl and different extreme conditions: i) at 25°C, ii) at 80°C and iii) at 80°C applying an electric potential. In these studies, it was found that nanopores and micropores can be obtained automatically and at a low cost. Additionally, the process was optimized to obtain clean silicon wafers after the pore fabrication process. This method opens the possibility for an efficient scale-up from laboratory production.

  17. Eutectic and solid-state wafer bonding of silicon with gold

    International Nuclear Information System (INIS)

    Abouie, Maryam; Liu, Qi; Ivey, Douglas G.

    2012-01-01

    Highlights: ► Eutectic and solid-state Au-Si bonding are compared for both a-Si and c-Si samples. ► Exchange of a-Si and Au layer was observed in both types of bonded samples. ► Use of c-Si for bonding resulted in formation of craters at the Au/c-Si interface. ► Solid-state Au-Si bonding produces better bonds in terms of microstructure. - Abstract: The simple Au-Si eutectic, which melts at 363 °C, can be used to bond Si wafers. However, faceted craters can form at the Au/Si interface as a result of anisotropic and non-uniform reaction between Au and crystalline silicon (c-Si). These craters may adversely affect active devices on the wafers. Two possible solutions to this problem were investigated in this study. One solution was to use an amorphous silicon layer (a-Si) that was deposited on the c-Si substrate to bond with the Au. The other solution was to use solid-state bonding instead of eutectic bonding, and the wafers were bonded at a temperature (350 °C) below the Au-Si eutectic temperature. The results showed that the a-Si layer prevented the formation of craters and solid-state bonding not only required a lower bonding temperature than eutectic bonding, but also prevented spill out of the solder resulting in strong bonds with high shear strength in comparison with eutectic bonding. Using amorphous silicon, the maximum shear strength for the solid-state Au-Si bond reached 15.2 MPa, whereas for the eutectic Au-Si bond it was 13.2 MPa.

  18. Magnetic structure of cross-shaped permalloy arrays embedded in silicon wafers

    International Nuclear Information System (INIS)

    Machida, Kenji; Tezuka, Tomoyuki; Yamamoto, Takahiro; Ishibashi, Takayuki; Morishita, Yoshitaka; Koukitu, Akinori; Sato, Katsuaki

    2005-01-01

    This paper describes the observed magnetic structure and the micromagnetic simulation of cross-shaped, permalloy (Ni 80 Fe 20 ) arrays embedded in silicon wafers. The nano-scale-width, cross-shaped patterns were fabricated using the damascene technique, electron beam lithography, and chemical mechanical polishing. The magnetic poles were observed as two pairs of bright and dark spots at the ends of the crossed-bars using a magnetic force microscope. The force gradient distributions were simulated based on micromagnetic calculations and tip's stray field calculations using the integral equation method. This process of calculation successfully explains the appearance of the poles and complicated spin structure at the crossing region

  19. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    Ngo, H-D; Hiess, Andre; Seidemann, Volker; Studzinski, Daniel; Lange, Martin; Leib, Juergen; Shariff, Dzafir; Ashraf, Huma; Steel, Mike; Atabo, Lilian; Reast, Jon

    2006-01-01

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  20. Detection of trace contamination of copper on a silicon wafer with TXRF

    International Nuclear Information System (INIS)

    Yamada, T.; Matsuo, M.; Kohno, H.; Mori, Y.

    2000-01-01

    The element copper on silicon wafers is one of the most important metals to be detected among the contamination in semiconductor industries. When W-Lβ 1 (9.67 keV) line is used for the excitation in TXRF instrument and when Si(Li) is used as its detector, an escape peak appears at 7.93 keV which is close to the energy of Cu-Kα line(8.04 keV). When the concentration of copper is lower than 10 10 atoms/cm 2 , accurate quantitative analysis is difficult because of the overlapping of the peaks. When Au-Lβ 1 line(11.44 keV) is used for the excitation, the escape peak appears at 9.70 keV which is far enough from the energy of Cu-Ka line. We prepared silicon wafers intentionally contaminated with copper in a low concentration range of 10 8 to 10 10 atoms/cm 2 and measured them with a TXRF instrument having Au-Lβ 1 line for excitation. The contaminated samples were made with IAP method and their Cu concentrations were calibrated with VPD-AAS method (recovery solution: 2 % HF + 2 % H 2 O 2 ). A figure shows the correlation between the results with TXRF and those with AAS. The horizontal axis is the value of concentration decided by AAS and the vertical axis is the intensity of Cu-Kα line measured with the TXRF. Six wafers of different concentration were used and five points on each wafer including the center were measured with TXRF. Five points at each concentration in the figure correspond to the results measured on one wafer. Intensities of Cu-Kα line are weak in these low concentration ranges but the background of them are also very small (less than 0.05 cps). Therefore the peak of Cu-Kα line can be distinguished from the background. It can be said that a calibration curve can be drawn to the middle range of 10 9 atoms/cm 2 . The same samples were measured with another TXRF instrument having W-Lβ 1 line for excitation. It was difficult to draw a calibration curve in this case. We will present both results taken with Au-Lβ 1 line and with W-Lβ 1 line. (author)

  1. Formation of cross-cutting structures with different porosity on thick silicon wafers

    Directory of Open Access Journals (Sweden)

    Vera A. Yuzova

    2017-06-01

    The second type pass-through structures include a macroporous silicon layer with a thickness of 250 μm which interlock in the depth of the silicon wafer to form a cavity with a size of 4–8 μm. For the formation of the second type structures we only used the first one of the abovementioned stages, the etching time being longer, i.e. 210 min. All the etching procedures were carried out in a cooling chamber at 5 °C. The developed technology will provided for easier and more reliable formation of the monolithic structures of membrane-electrode assembly micro fuel cells.

  2. EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS

    Directory of Open Access Journals (Sweden)

    S. A. Chizhik

    2013-01-01

    Full Text Available The advantages of using an atomic force microscopy in manufacturing of submicron integrated circuits are described. The possibilities of characterizing the surface morphology and the etching profile for silicon substrate and bus lines, estimation of the periodicity and size of bus lines, geometrical stability for elementary bus line are shown. Methods of optical and atomic force microcopies are combined in one diagnostic unit. Scanning  probe  microscope  (SPM  200  is  designed  and  produced.  Complex  SPM  200  realizes  nondestructive control of microelectronics elements made on silicon wafers up to 200 mm in diameter and it is introduced by JSC «Integral» for the purpose of operational control, metrology and acceptance of the final product.

  3. Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

    Science.gov (United States)

    Gemmel, Catherin; Hensen, Jan; David, Lasse; Kajari-Schröder, Sarah; Brendel, Rolf

    2018-04-01

    Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing window appears to be a challenge for this process. This holds in particularly for the etching current density of the separation layer that leads to lift-off failures if it is too large or too low. Here we present kerfless PSI wafers of high electronic quality that we fabricate on weakly reorganized porous Si with etch current densities varying in a wide process window from 110 to 150 mA/cm2. We are able to detach all 17 out of 17 epitaxial wafers. All wafers exhibit charge carrier lifetimes in the range of 1.9 to 4.3 ms at an injection level of 1015 cm-3 without additional high-temperature treatment. We find even higher lifetimes in the range of 4.6 to 7.0 ms after applying phosphorous gettering. These results indicate that a weak reorganization of the porous layer can be beneficial for a large lift-off process window while still allowing for high carrier lifetimes.

  4. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted.

    Science.gov (United States)

    Zhai, Ke; He, Qing; Li, Liang; Ren, Yi

    2017-09-01

    Chemical mechanical polishing (CMP) is the primary method to realize the global planarization of silicon wafer. In order to improve this process, a novel method which combined megasonic vibration to assist chemical mechanical polishing (MA-CMP) is developed in this paper. A matching layer structure of polishing head was calculated and designed. Silicon wafers are polished by megasonic assisted chemical mechanical polishing and traditional chemical mechanical polishing respectively, both coarse polishing and precision polishing experiments were carried out. With the use of megasonic vibration, the surface roughness values Ra reduced from 22.260nm to 17.835nm in coarse polishing, and the material removal rate increased by approximately 15-25% for megasonic assisted chemical mechanical polishing relative to traditional chemical mechanical polishing. Average Surface roughness values Ra reduced from 0.509nm to 0.387nm in precision polishing. The results show that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The material removal and finishing mechanisms of megasonic vibration assisted polishing are investigated too. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Process induced sub-surface damage in mechanically ground silicon wafers

    International Nuclear Information System (INIS)

    Yang Yu; De Munck, Koen; Teixeira, Ricardo Cotrin; Swinnen, Bart; De Wolf, Ingrid; Verlinden, Bert

    2008-01-01

    Micro-Raman spectroscopy, scanning electron microcopy, atomic force microscopy and preferential etching were used to characterize the sub-surface damage induced by the rough and fine grinding steps used to make ultra-thin silicon wafers. The roughly and ultra-finely ground silicon wafers were examined on both the machined (1 0 0) planes and the cross-sectional (1 1 0) planes. They reveal similar multi-layer damage structures, consisting of amorphous, plastically deformed and elastically stressed layers. However, the thickness of each layer in the roughly ground sample is much higher than its counterpart layers in the ultra-finely ground sample. The residual stress after rough and ultra-fine grinding is in the range of several hundreds MPa and 30 MPa, respectively. In each case, the top amorphous layer is believed to be the result of sequential phase transformations (Si-I to Si-II to amorphous Si). These phase transformations correspond to a ductile grinding mechanism, which is dominating in ultra-fine grinding. On the other hand, in rough grinding, a mixed mechanism of ductile and brittle grinding causes multi-layer damage and sub-surface cracks

  6. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.

    2018-01-02

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  7. Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

    KAUST Repository

    Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2018-01-01

    Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

  8. Effect of Anisotropy on Shape Measurement Accuracy of Silicon Wafer Using Three-Point-Support Inverting Method

    Science.gov (United States)

    Ito, Yukihiro; Natsu, Wataru; Kunieda, Masanori

    This paper describes the influences of anisotropy found in the elastic modulus of monocrystalline silicon wafers on the measurement accuracy of the three-point-support inverting method which can measure the warp and thickness of thin large panels simultaneously. Deflection due to gravity depends on the crystal orientation relative to the positions of the three-point-supports. Thus the deviation of actual crystal orientation from the direction indicated by the notch fabricated on the wafer causes measurement errors. Numerical analysis of the deflection confirmed that the uncertainty of thickness measurement increases from 0.168µm to 0.524µm due to this measurement error. In addition, experimental results showed that the rotation of crystal orientation relative to the three-point-supports is effective for preventing wafer vibration excited by disturbance vibration because the resonance frequency of wafers can be changed. Thus, surface shape measurement accuracy was improved by preventing resonant vibration during measurement.

  9. Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

    Science.gov (United States)

    Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

    2018-03-01

    A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

  10. High sensitivity detection and characterization of the chemical state of trace element contamination on silicon wafers

    CERN Document Server

    Pianetta, Piero A; Baur, K; Brennan, S; Homma, T; Kubo, N

    2003-01-01

    Increasing the speed and complexity of semiconductor integrated circuits requires advanced processes that put extreme constraints on the level of metal contamination allowed on the surfaces of silicon wafers. Such contamination degrades the performance of the ultrathin SiO sub 2 gate dielectrics that form the heart of the individual transistors. Ultimately, reliability and yield are reduced to levels that must be improved before new processes can be put into production. It should be noted that much of this metal contamination occurs during the wet chemical etching and rinsing steps required for the manufacture of integrated circuits and industry is actively developing new processes that have already brought the metal contamination to levels beyond the measurement capabilities of conventional analytical techniques. The measurement of these extremely low contamination levels has required the use of synchrotron radiation total reflection X-ray fluorescence (SR-TXRF) where sensitivities 100 times better than conv...

  11. Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

    Directory of Open Access Journals (Sweden)

    Jin-Seok Lee

    2012-01-01

    Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

  12. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    International Nuclear Information System (INIS)

    Mou, Chun-Yueh; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-01-01

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate

  13. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mou, Chun-Yueh, E-mail: cymou165@gmail.com; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-06-30

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate.

  14. Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

    Science.gov (United States)

    Wang, Shing-Dar; Chen, Ting-Wei

    2018-06-01

    In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

  15. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  16. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  17. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  18. Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

  19. Wafer scale formation of monocrystalline silicon-based Mie resonators via silicon-on-insulator dewetting.

    Science.gov (United States)

    Abbarchi, Marco; Naffouti, Meher; Vial, Benjamin; Benkouider, Abdelmalek; Lermusiaux, Laurent; Favre, Luc; Ronda, Antoine; Bidault, Sébastien; Berbezier, Isabelle; Bonod, Nicolas

    2014-11-25

    Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.

  20. Quantitative analysis of phosphosilicate glass films on silicon wafers for calibration of x-ray fluorescence spectrometry standards

    International Nuclear Information System (INIS)

    Weissman, S.H.

    1983-01-01

    The phosphorus and silicon contents of phosphosilicate glass films deposited by chemical vapor deposition (CVD) on silicon wafers were determined. These films were prepared for use as x-ray fluorescence (XRF) spectrometry standards. The thin films were removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si concentrations in solution were determined by inductively coupled plasma atomic emission spectroscopy (ICP). The calculated phosphorus concentration ranged from 2.2 to 12 wt %, with an uncertainty of 2.73 to 10.1 relative percent. Variation between the calculated weight loss (summation of P 2 O 5 and SiO 2 amounts as determined by ICP) and the measured weight loss (determined gravimetrically) averaged 4.9%. Results from the ICP method, Fourier transform-infrared spectroscopy (FT-IR), dispersive infrared spectroscopy, electron microprobe, and x-ray fluorescence spectroscopy for the same samples are compared

  1. Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

    Science.gov (United States)

    Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

    2013-05-06

    Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

  2. Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques

    Science.gov (United States)

    Syed, Ahmed Rashid

    Among the great physical challenges faced by the current front-end semiconductor equipment manufacturers is the accurate and repeatable surface temperature measurement of wafers during various fabrication steps. Close monitoring of temperature is essential in that it ensures desirable device characteristics to be reliably reproduced across various wafer lots. No where is the need to control temperature more pronounced than it is during Rapid Thermal Processing (RTP) which involves temperature ramp rates in excess of 200°C/s. This dissertation presents an elegant and practical approach to solve the wafer surface temperature estimation problem, in context of RTP, by deploying hardware that acquires the necessary data while preserving the integrity and purity of the wafer. In contrast to the widely used wafer-contacting (and hence contaminating) methods, such as bonded thermocouples, or environment sensitive schemes, such as light-pipes and infrared pyrometry, the proposed research explores the concept of utilizing Lamb (acoustic) waves to detect changes in wafer surface temperature, during RTP. Acoustic waves are transmitted to the wafer via an array of quartz rods that normally props the wafer inside an RTP chamber. These waves are generated using piezoelectric transducers affixed to the bases of the quartz rods. The group velocity of Lamb waves traversing the wafer surface undergoes a monotonic decrease with rise in wafer temperature. The correspondence of delay in phase of the received Lamb waves and the ambient temperature, along all direct paths between sending and receiving transducers, yields a psuedo real-time thermal image of the wafer. Although the custom built hardware-setup implements the above "proof-of-concept" scheme by transceiving acoustic signals at a single frequency, the real-world application will seek to enhance the data acquistion. rate (>1000 temperature measurements per seconds) by sending and receiving Lamb waves at multiple frequencies (by

  3. Self-diffusion in single crystalline silicon nanowires

    Science.gov (United States)

    Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

    2018-04-01

    Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

  4. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    Science.gov (United States)

    Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

    2014-10-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

  5. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

    2014-01-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

  6. Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

    2017-09-01

    SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

  7. Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

    Science.gov (United States)

    Wang, Chenxi; Xu, Jikai; Zeng, Xiaorun; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

    2018-02-01

    We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a two-step wet chemical surface cleaning. After a post-annealing at 200 °C, strong bonding interfaces with no defects or microcracks were obtained. On the basis of the detailed surface and bonding interface characterizations, the bonding mechanism was explored and discussed. The amino groups terminated on the cleaned surfaces might contribute to the bonding strength enhancement during the annealing. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring a vacuum system.

  8. Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

    Directory of Open Access Journals (Sweden)

    Di Di

    2014-01-01

    Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

  9. Linear self-assembly and grafting of gold nanorods into arrayed micrometer-long nanowires on a silicon wafer via a combined top-down/bottom-up approach.

    Science.gov (United States)

    Lestini, Elena; Andrei, Codrin; Zerulla, Dominic

    2018-01-01

    Macroscopically long wire-like arrangements of gold nanoparticles were obtained by controlled evaporation and partial coalescence of an aqueous colloidal solution of capped CTAB-Au nanorods onto a functionalised 3-mercaptopropyl trimethoxysilane (MPTMS) silicon substrate, using a removable, silicon wafer with a hydrophobic surface that serves as a "handrail" for the initial nanorods' linear self-assembly. The wire-like structures display a quasi-continuous pattern by thermal annealing of the gold nanorods when the solvent (i.e. water) is evaporated at temperatures rising from 20°C to 140°C. Formation of both single and self-replicating parallel 1D-superstructures consisting of two or even three wires is observed and explained under such conditions.

  10. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hemmi, A.; Bernard, C.; Cun, H.; Roth, S.; Klöckner, M.; Kälin, T.; Osterwalder, J.; Greber, T., E-mail: greber@physik.uzh.ch [Physik-Institut, Universität Zürich, CH-8057 Zürich (Switzerland); Weinl, M.; Gsell, S.; Schreck, M. [Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)

    2014-03-15

    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

  11. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  12. Disposable attenuated total reflection-infrared crystals from silicon wafer: a versatile approach to surface infrared spectroscopy.

    Science.gov (United States)

    Karabudak, Engin; Kas, Recep; Ogieglo, Wojciech; Rafieian, Damon; Schlautmann, Stefan; Lammertink, R G H; Gardeniers, Han J G E; Mul, Guido

    2013-01-02

    Attenuated total reflection-infrared (ATR-IR) spectroscopy is increasingly used to characterize solids and liquids as well as (catalytic) chemical conversion. Here we demonstrate that a piece of silicon wafer cut by a dicing machine or cleaved manually can be used as disposable internal reflection element (IRE) without the need for polishing and laborious edge preparation. Technical aspects, fundamental differences, and pros and cons of these novel disposable IREs and commercial IREs are discussed. The use of a crystal (the Si wafer) in a disposable manner enables simultaneous preparation and analysis of substrates and application of ATR spectroscopy in high temperature processes that may lead to irreversible interaction between the crystal and the substrate. As representative application examples, the disposable IREs were used to study high temperature thermal decomposition and chemical changes of polyvinyl alcohol (PVA) in a titania (TiO(2)) matrix and assemblies of 65-450 nm thick polystyrene (PS) films.

  13. Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

    Science.gov (United States)

    Norris, D J; Myronov, M; Leadley, D R; Walther, T

    2017-12-01

    We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemical vapour deposition and forms islands on the surface of all Si wafers; however, the morphology (aspect ratio) of the deposited islands is different for each type of wafer. Moreover, the mechanism for strain relaxation is different for each type of wafer owing to the different orientation of the (111) slip planes with the growth surface. Ge grown on (001)Si is initially pseudomorphically strained, yielding small, almost symmetrical islands of high aspect ratio (clusters or domes) on top interdiffused SiGe pedestals, without any evidence of plastic relaxation by dislocations, which would nucleate later-on when the islands might have coalesced and then the Matthews-Blakeslee limit is reached. For (11¯0)Si, islands are flatter and more asymmetric, and this is correlated with plastic relaxation of some islands by dislocations. In the case of growth on (11¯1)Si wafers, there is evidence of immediate strain relaxation taking place by numerous dislocations and also twinning. In the case of untwined film/substrate interfaces, Burgers circuits drawn around certain (amorphous-like) regions show a nonclosure with an edge-type a/4[1¯12] Burgers vector component visible in projection along [110]. Microtwins of multiples of half unit cells in thickness have been observed which occur at the growth interface between the Si(11¯1) buffer layer and the overlying Ge material. Models of the growth mechanisms to explain the interfacial configurations of each type of wafer are suggested. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  14. Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

    Science.gov (United States)

    Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

    2014-03-01

    Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

  15. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  16. Synthesis of thermoresponsive poly(N-isopropylacrylamide) brush on silicon wafer surface via atom transfer radical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Turan, Eylem; Demirci, Serkan [Department of Chemistry, Faculty of Art and Science, Gazi University, 06500 Besevler, Ankara (Turkey); Caykara, Tuncer, E-mail: caykara@gazi.edu.t [Department of Chemistry, Faculty of Art and Science, Gazi University, 06500 Besevler, Ankara (Turkey)

    2010-08-31

    Thermoresponsive poly(N-isopropylacrylamide) [poly(NIPAM)] brush on silicon wafer surface was prepared by combining the self-assembled monolayer of initiator and atom transfer radical polymerization (ATRP). The resulting polymer brush was characterized by in situ reflectance Fourier transform infrared spectroscopy, atomic force microscopy and ellipsometry techniques. Gel permeation chromatography determination of the number-average molecular weight and polydispersity index of the brush detached from the silicon wafer surface suggested that the surface-initiated ATRP method can provide relatively homogeneous polymer brush. Contact angle measurements exhibited a two-stage increase upon heating over the board temperature range 25-45 {sup o}C, which is in contrast to the fact that free poly(NIPAM) homopolymer in aqueous solution exhibits a phase transition at ca. 34 {sup o}C within a narrow temperature range. The first de-wetting transition takes place at 27 {sup o}C, which can be tentatively attributed to the n-cluster induced collapse of the inner region of poly(NIPAM) brush close to the silicon surface; the second de-wetting transition occurs at 38 {sup o}C, which can be attributed to the outer region of poly(NIPAM) brush, possessing much lower chain density compared to that of the inner part.

  17. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  18. Wiping frictional properties of electrospun hydrophobic/hydrophilic polyurethane nanofiber-webs on soda-lime glass and silicon-wafer.

    Science.gov (United States)

    Watanabe, Kei; Wei, Kai; Nakashima, Ryu; Kim, Ick Soo; Enomoto, Yuji

    2013-04-01

    In the present work, we conducted the frictional tests of hydrophobic and hydrophilic polyurethane (PUo and PUi) nanofiber webs against engineering materials; soda-lime glass and silicon wafer. PUi/glass combination, with highest hydrophilicity, showed the highest friction coefficient which decrease with the increase of the applied load. Furthermore, the effects of fluorine coating are also investigated. The friction coefficient of fluorine coated hydrophobic PU nanofiber (PUof) shows great decrease against the silicon wafer. Finally, wiping ability and friction property are investigated when the substrate surface is contaminated. Nano-particle dusts are effectively collected into the pores by wiping with PUo and PUi nanofiber webs both on glass and silicon wafer. The friction coefficient gradually increased with the increase of the applied load.

  19. Terahertz transmission properties of silicon wafers using continuous-wave terahertz spectroscopy

    Science.gov (United States)

    Kim, Chihoon; Ahn, Jae Sung; Ji, Taeksoo; Eom, Joo Beom

    2017-04-01

    We present the spectral properties of Si wafers using continuous-wave terahertz (CW-THz) spectroscopy. By using a tunable laser source and a fixed distributed-feedback laser diode (DFB-LD), a stably tunable beat source for CW-THz spectroscopy system can be implemented. THz radiation is generated in the frequency range of 100 GHz-800 GHz by photomixing in a photoconductive antenna. We also measured CW-THz waveforms by changing the beat frequency and confirmed repeatability through repeated measurement. We calculated the peaks of the THz frequency by taking fast Fourier transforms (FFTs) of measured THz waveforms. The feasibility of CW-THz spectroscopy is demonstrated by the THz spectra of Si wafers with different resistivities, mobilities, and carrier concentrations. The results show that Si wafers with a lower resistivity absorb more THz waves. Thus, we expect our CW-THz system to have the advantage of being able to perform fast non-destructive analysis.

  20. Terahertz transmission properties of silicon wafers using continuous-wave terahertz spectroscopy

    International Nuclear Information System (INIS)

    Kim, Chihoon; Ahn, Jae Sung; Eom, Joo Beom; Ji, Taeksoo

    2017-01-01

    We present the spectral properties of Si wafers using continuous-wave terahertz (CW-THz) spectroscopy. By using a tunable laser source and a fixed distributed-feedback laser diode (DFB-LD), a stably tunable beat source for CW-THz spectroscopy system can be implemented. THz radiation is generated in the frequency range of 100 GHz–800 GHz by photomixing in a photoconductive antenna. We also measured CW-THz waveforms by changing the beat frequency and confirmed repeatability through repeated measurement. We calculated the peaks of the THz frequency by taking fast Fourier transforms (FFTs) of measured THz waveforms. The feasibility of CW-THz spectroscopy is demonstrated by the THz spectra of Si wafers with different resistivities, mobilities, and carrier concentrations. The results show that Si wafers with a lower resistivity absorb more THz waves. Thus, we expect our CW-THz system to have the advantage of being able to perform fast non-destructive analysis. (paper)

  1. Methods for characterization of wafer-level encapsulation applied on silicon to LTCC anodic bonding

    International Nuclear Information System (INIS)

    Khan, M F; Ghavanini, F A; Enoksson, P; Haasl, S; Löfgren, L; Persson, K; Rusu, C; Schjølberg-Henriksen, K

    2010-01-01

    This paper presents initial results on generic characterization methods for wafer-level encapsulation. The methods, developed specifically to evaluate anodic bonding of low-temperature cofired ceramics (LTCC) to Si, are generally applicable to wafer-level encapsulation. Different microelectromechanical system (MEMS) structures positioned over the whole wafer provide local information about the bond quality. The structures include (i) resonating cantilevers as pressure sensors for bond hermeticity, (ii) resonating bridges as stress sensors for measuring the stress induced by the bonding and (iii) frames/mesas for pull tests. These MEMS structures have been designed, fabricated and characterized indicating that local information can easily be obtained. Buried electrodes to enable localized bonding have been implemented and their effectiveness is indicated from first results of the novel Si to LTCC anodic bonding.

  2. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

    Science.gov (United States)

    Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

    2018-05-01

    A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

  3. Interfacial Characteristics of TiN Coatings on SUS304 and Silicon Wafer Substrates with Pulsed Laser Thermal Shock

    International Nuclear Information System (INIS)

    Seo, Nokun; Jeon, Seol; Choi, Youngkue; Shin, Hyun-Gyoo; Lee, Heesoo; Jeon, Min-Seok

    2014-01-01

    TiN coatings prepared on different substrates that had different coefficients of thermal expansion were subjected to pulsed laser thermal shock and observed by using FIB milling to compare the deterioration behaviors. TiN coating on SUS304, which had a larger CTE (⁓17.3 × 10 - 6 /℃) than the coating was degraded with pores and cracks on the surface and showed significant spalling of the coating layer over a certain laser pulses. TiN coating on silicon wafer with a smaller CTE value, ⁓4.2 × 10‒6 /℃, than the coating exhibited less degradation of the coating layer at the same ablation condition. Cracks propagated at the interface were observed in the coating on the silicon wafer, which induced a compressive stress to the coating. The coating on the SUS304 showed less interface cracks while the tensile stress was applied to the coating. Delamination of the coating layer related to the intercolumnar cracks at the interface was observed in both coatings through bright-field TEM analysis.

  4. Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface

    International Nuclear Information System (INIS)

    Takahara, Hikari; Mori, Yoshihiro; Shibata, Harumi; Shimazaki, Ayako; Shabani, Mohammad B.; Yamagami, Motoyuki; Yabumoto, Norikuni; Nishihagi, Kazuo; Gohshi, Yohichi

    2013-01-01

    Vapor phase treatment (VPT) was under investigation by the International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) to improve the detection limit of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis of silicon wafers. Round robin test results have confirmed that TXRF intensity increased by VPT for intentional contamination with 5 × 10 9 and 5 × 10 10 atoms/cm 2 Fe and Ni. The magnification of intensity enhancement varied greatly (1.2–4.7 in VPT factor) among the participating laboratories, though reproducible results could be obtained for average of mapping measurement. SEM observation results showed that various features, sizes, and surface densities of particles formed on the wafer after VPT. The particle morphology seems to have some impact on the VPT efficiency. High resolution SEM observation revealed that a certain number of dots with SiO 2 , silicate and/or carbon gathered to form a particle and heavy metals, Ni and Fe in this study were segregated on it. The amount and shape of the residue should be important to control VPT factor. - Highlights: • This paper presents a summary of study results of VPT–TXRF using ISO/TC201/WG2. • Our goal is to analyze the trace metallic contamination on silicon wafer with concentrations below 1 × 10 10 atoms/cm 2 . • The efficiency and mechanism of VPT are discussed under several round robin tests and systematic studies

  5. Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force

    Energy Technology Data Exchange (ETDEWEB)

    Schiwek, Simon; Stark, Robert W., E-mail: stark@csi.tu-darmstadt.de, E-mail: dietz@csi.tu-darmstadt.de; Dietz, Christian, E-mail: stark@csi.tu-darmstadt.de, E-mail: dietz@csi.tu-darmstadt.de [Center of Smart Interfaces, Technische Universität Darmstadt, Alarich-Weiss-Str. 10, 64287 Darmstadt (Germany); Physics of Surfaces, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 16, 64287 Darmstadt (Germany); Heim, Lars-Oliver [Center of Smart Interfaces, Technische Universität Darmstadt, Alarich-Weiss-Str. 10, 64287 Darmstadt (Germany)

    2015-03-14

    The friction force between nanoparticles and a silicon wafer is a crucial parameter for cleaning processes in the semiconductor industry. However, little is known about the pH-dependency of the friction forces and the shear strength at the interface. Here, we push polystyrene nanoparticles, 100 nm in diameter, with the tip of an atomic force microscope and measure the pH-dependency of the friction, adhesion, and normal forces on a silicon substrate covered with a native silicon dioxide layer. The peak force tapping mode was applied to control the vertical force on these particles. We successively increased the applied load until the particles started to move. The main advantage of this technique over single manipulation processes is the achievement of a large number of manipulation events in short time and in a straightforward manner. Geometrical considerations of the interaction forces at the tip-particle interface allowed us to calculate the friction force and shear strength from the applied normal force depending on the pH of an aqueous solution. The results clearly demonstrated that particle removal should be performed with a basic solution at pH 9 because of the low interaction forces between particle and substrate.

  6. Hybrid integrated single-wavelength laser with silicon micro-ring reflector

    Science.gov (United States)

    Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

    2018-02-01

    A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

  7. Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

    Science.gov (United States)

    Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

    2013-08-20

    To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti Kα 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

  8. Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

    Energy Technology Data Exchange (ETDEWEB)

    Qiusheng, Y., E-mail: qsyan@gdut.edu.cn; Senkai, C., E-mail: senkite@sina.com; Jisheng, P., E-mail: panjisheng@gdut.edu.cn [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou, 510006 (China)

    2015-03-30

    Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

  9. Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures

    NARCIS (Netherlands)

    Westerik, P. J.; Vijselaar, W. J.C.; Berenschot, J. W.; Tas, N. R.; Huskens, J.; Gardeniers, J. G.E.

    2018-01-01

    For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that

  10. Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

    International Nuclear Information System (INIS)

    Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

    2007-01-01

    The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

  11. Analysis and optimization of silicon wafers wire sawing; Analyse et optimisation du procede de decoupe de plaques de silicium

    Energy Technology Data Exchange (ETDEWEB)

    Rouault de Coligny, P.

    2002-09-15

    This work has been done at the Centre de Mise en Forme des Materiaux and supported by the Agence de l'Environnement et la Maitrise de l'Energie and Photowatt International SA. It concerns one of the stages of the production of photovoltaic solar cells: the cutting of multi-crystalline silicon wafers by wire sawing. A review of the literature combined with the observation of rough wafers shows that wire sawing involves 3-body abrasion and that material removal is achieved in a ductile manner and forms micro-chips. Therefore, the depth of indentation which is necessary for the ductile-fragile transition as shown by the review of the literature is not reached. The resulting abrasion can be described thanks to Archard's Law. The subsurface damage is 2.5 {mu}m deep. A thermal study has shown that the temperature of the cutting is no higher than about 50 deg. C and that it depends on how much heat can be evacuated by the wire. Analyzing the flaws of the wafers has enabled us to identify their origins and to find solutions. The study of the wire's wear has proved that its diameter can be reduced only if the wire is drawn continuously. Energy can be saved at various stages, the surface of the wafers can be improved, these three arguments plead for the suppression of the back and forth. A tribological device has been set up which allows us to study the abrasion of silicon in the same conditions as in the wire sawing. A mechanical model linking the bending of the wire to the parameters collected during the wire sawing process can predict how high the wire web will be in the transitional and permanent regimes, the contact pressure and the wire wear. Material removal by plane strain scratch tests has been numerically simulated. The orders of magnitude of wear coefficients are identical to those deduced from tribological simulations and to those measured on the saws. This approach has opened new prospects which will improve the process by optimizing the

  12. Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

    Science.gov (United States)

    Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

    2013-11-15

    We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

  13. A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

    Directory of Open Access Journals (Sweden)

    P. S. Pa

    2013-01-01

    Full Text Available A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4 layer easily and cleanly.

  14. An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

    Science.gov (United States)

    Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

    2017-06-01

    Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

  15. An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Teo, Adrian J T; Li, Holden; Yoon, Yong-Jin; Tan, Say Hwa

    2017-01-01

    Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G −1 , and a highest recorded sensitivity of 44.1 mV G −1 . A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices. (technical note)

  16. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

    International Nuclear Information System (INIS)

    Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

    1991-01-01

    Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

  17. Fabrication of an integrated ΔE-E-silicon detector by wafer bonding using cobalt disilicide

    International Nuclear Information System (INIS)

    Thungstroem, G.; Veldhuizen, E.J. van; Westerberg, L.; Norlin, L.-O.; Petersson, C.S.

    1997-01-01

    The problem concerning mechanical stability of thin self-supporting ΔE detector in a ΔE-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wafer bonding using cobalt disilicide. The ΔE-detector has a thickness of 6.5 μm and the E detector 290 μm with an area of 24.8 mm 2 . The system was characterized with secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), electrical measurement, particle measurement and two-dimensional electrical simulation. (orig.)

  18. Fabrication of an integrated {Delta}E-E-silicon detector by wafer bonding using cobalt disilicide

    Energy Technology Data Exchange (ETDEWEB)

    Thungstroem, G. [Mid-Sweden Univ., Sundsvall (Sweden). Dept. of Inf. Technol.]|[Royal Institute of Technology, Department of Electronics, Electrum 229, S-164 40 Kista (Sweden); Veldhuizen, E.J. van [Uppsala University, Department of Radiation Science, Box 535, S-751 21 Uppsala (Sweden); Westerberg, L. [Uppsala University, The Svedberg Laboratory, Box 533, S-751 21 Uppsala (Sweden); Norlin, L.-O. [Royal Institute of Technology, Department of Physics, Frescativaegen 24, S-104 05 Stockholm (Sweden); Petersson, C.S. [Royal Institute of Technology, Department of Electronics, Electrum 229, S-164 40 Kista (Sweden)

    1997-06-01

    The problem concerning mechanical stability of thin self-supporting {Delta}E detector in a {Delta}E-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wafer bonding using cobalt disilicide. The {Delta}E-detector has a thickness of 6.5 {mu}m and the E detector 290 {mu}m with an area of 24.8 mm{sup 2}. The system was characterized with secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), electrical measurement, particle measurement and two-dimensional electrical simulation. (orig.).

  19. Preliminary reduction of chromium ore using Si sludge generated in silicon wafer manufacturing process

    Directory of Open Access Journals (Sweden)

    Jung W.-G.

    2018-01-01

    Full Text Available In order to promote the recycling of by-product from Si wafer manufacturing process and to develop environment-friend and low cost process for ferrochrome alloy production, a basic study was performed on the preliminary reduction reaction between chromium ore and the Si sludge, comprised of SiC and Si particles, which is recovered from the Si wafer manufacturing process for the semiconductor and solar cell industries. Pellets were first made by mixing chromium ore, Si sludge, and some binders in the designed mixing ratios and were then treated at different temperatures in the 1116°C–1388°C range in an ambient atmosphere. Cordierite and SiO2 were confirmed to be formed in the products after the reduction. Additionally, metal particles were observed in the product with Fe, Cr, and Si components. It is found that temperatures above 1300°C are necessary for the reduction of the chromium ore by the Si sludge. The reduction ratio for Fe was evaluated quantitatively for our experimental conditions, and the proper mixing ratio was suggested for the pre-reduction of the chromium ore by the Si sludge. This study provides basic information for the production of ferrochrome alloys on the pre-reduction of chromium ore using Si sludge.

  20. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  1. Large Out-of-Plane Displacement Bistable Electromagnetic Microswitch on a Single Wafer.

    Science.gov (United States)

    Miao, Xiaodan; Dai, Xuhan; Huang, Yi; Ding, Guifu; Zhao, Xiaolin

    2016-05-05

    This paper presents a bistable microswitch fully batch-fabricated on a single glass wafer, comprising of a microactuator, a signal transformer, a microspring and a permanent magnet. The bistable mechanism of the microswitch with large displacement of 160 μm depends on the balance of the magnetic force and elastic force. Both the magnetic force and elastic force were optimized by finite-element simulation to predict the reliable of the device. The prototype was fabricated and characterized. By utilizing thick laminated photoresist sacrificial layer, the large displacement was obtained to ensure the insulation of the microswitch. The testing results show that the microswitch realized the bistable mechanism at a 3-5 V input voltage and closed in 0.96 ms, which verified the simulation.

  2. Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

    Directory of Open Access Journals (Sweden)

    Ali Attaran

    2014-01-01

    Full Text Available Fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process has been presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200 μm thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.

  3. Possibility of whole-surface analysis of a silicon wafer with ordinary straight TXRF

    International Nuclear Information System (INIS)

    Mori, Y.; Uemura, K.; Iizuka, Y.

    2000-01-01

    For the analysis of average metal concentration on a semiconductor surface, we customarily use the wet techniques (AAS, typically), that require skilled operators or expensive automated machines for sample pretreatment. The straight TXRF require no pretreatment, on the other hand. However, its detection area is too small (1-2 cm 2 ) to conduct a whole-surface analysis. In fact, it takes more than one day per one wafer (500 s/point x 100-300 points) for a complete mapping. Therefore it has been believed that the whole-surface analysis with straight TXRF is impracticable. It should be noted that the absolute lower limit of detection (LLD) of the straight TXRF is superior to AAS. As an example, the absolute LLD of TXRF for Fe is 0.2 pg (500 s integration), while that of AAS is l0 pg. The required integration time for TXRF to obtain the same LLD of AAS is calculated to be only 0.2 s. This means, in principle, that the whole-surface contamination can be measured in some ten seconds by accumulating 0.2 s mapping. But actually, the adjustment of glancing angle requires several ten seconds per one point, so the above mapping still takes several hours. That is why such a measurement has not been applied to daily analysis so far. However, the influence of glancing angle errors is expected to be reduced through the multi-point measurement. Figure 1 shows an accumulated spectrum of 20 s x 25 points mapping for an IAP wafer doped with Ni. In this measurement, glancing angles were not precisely controlled (the error of glancing angle is ±15 %). A spectrum of 500 s x 1 point measurement for the same wafer is shown in Figure 2. Figures 1 and 2 are almost identical. This suggests that the reduction of glancing angle errors actually works well through multi-points measurement. This method is expected to give better results by increasing the number of measuring points. The overall variation for the final measurement value obtained by multi-point measurement can be assessed by the

  4. Synchrotron Radiation Total Reflection X-ray Fluorescence Spectroscopy for Microcontamination Analysis on Silicon Wafer Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Takaura, Norikatsu

    1997-10-01

    As dimensions in state-of-the-art CMOS devices shrink to less than 0.1 pm, even low levels of impurities on wafer surfaces can cause device degradation. Conventionally, metal contamination on wafer surfaces is measured using Total Reflection X-Ray Fluorescence Spectroscopy (TXRF). However, commercially available TXRF systems do not have the necessary sensitivity for measuring the lower levels of contamination required to develop new CMOS technologies. In an attempt to improve the sensitivity of TXRF, this research investigates Synchrotron Radiation TXRF (SR TXRF). The advantages of SR TXRF over conventional TXRF are higher incident photon flux, energy tunability, and linear polarization. We made use of these advantages to develop an optimized SR TXRF system at the Stanford Synchrotron Radiation Laboratory (SSRL). The results of measurements show that the Minimum Detection Limits (MDLs) of SR TXRF for 3-d transition metals are typically at a level-of 3x10{sup 8} atoms/cm{sup 2}, which is better than conventional TXRF by about a factor of 20. However, to use our SR TXRF system for practical applications, it was necessary to modify a commercially available Si (Li) detector which generates parasitic fluorescence signals. With the modified detector, we could achieve true MDLs of 3x10{sup 8} atoms/cm{sup 2} for 3-d transition metals. In addition, the analysis of Al on Si wafers is described. Al analysis is difficult because strong Si signals overlap the Al signals. In this work, the Si signals are greatly reduced by tuning the incident beam energy below the Si K edge. The results of our measurements show that the sensitivity for Al is limited by x-ray Raman scattering. Furthermore, we show the results of theoretical modeling of SR TXRF backgrounds consisting of the bremsstrahlung generated by photoelectrons, Compton scattering, and Raman scattering. To model these backgrounds, we extended conventional theoretical models by taking into account several aspects particular

  5. Radiation hardness of silicon detectors manufactured on wafers from various sources

    International Nuclear Information System (INIS)

    Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

    1997-01-01

    Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

  6. Damage-free polishing of monocrystalline silicon wafers without chemical additives

    International Nuclear Information System (INIS)

    Biddut, A.Q.; Zhang, L.C.; Ali, Y.M.; Liu, Z.

    2008-01-01

    This investigation explores the possibility and identifies the mechanism of damage-free polishing of monocrystalline silicon without chemical additives. Using high resolution electron microscopy and contact mechanics, the study concludes that a damage-free polishing process without chemicals is feasible. All forms of damages, such as amorphous Si, dislocations and plane shifting, can be eliminated by avoiding the initiation of the β-tin phase of silicon during polishing. When using 50 nm abrasives, the nominal pressure to achieve damage-free polishing is 20 kPa

  7. Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

    Science.gov (United States)

    Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

    2017-02-15

    An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

  8. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  9. Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates.

    Science.gov (United States)

    Deng, Bing; Pang, Zhenqian; Chen, Shulin; Li, Xin; Meng, Caixia; Li, Jiayu; Liu, Mengxi; Wu, Juanxia; Qi, Yue; Dang, Wenhui; Yang, Hao; Zhang, Yanfeng; Zhang, Jin; Kang, Ning; Xu, Hongqi; Fu, Qiang; Qiu, Xiaohui; Gao, Peng; Wei, Yujie; Liu, Zhongfan; Peng, Hailin

    2017-12-26

    Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

  10. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    International Nuclear Information System (INIS)

    Jung, Y. J.; Kim, W. K.; Jung, J. H.

    2014-01-01

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  11. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

    2014-08-15

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  12. Internal Friction and Young's Modulus Measurements on SiO2 and Ta2O5 Films Done with an Ultra-High Q Silicon-Wafer Suspension

    Directory of Open Access Journals (Sweden)

    Granata M.

    2015-04-01

    Full Text Available In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension has been developed. The key features of this system are: i the possibility to use substrates easily available like silicon wafers; ii extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv absence of clamping; v the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

  13. Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C.; Bechtel, Hans A.; Bokor, Jeffrey; Schenkel, Thomas

    2009-06-10

    We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

  14. Neutron activation analysis of low-level element contents in silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, W [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Berger, A [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Niese, S [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Koehler, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Matthes, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Gawlik, D [Hahn-Meitner-Institut, Berlin (Germany)

    1997-03-01

    Semiconductor silicon is among the purest materials having ever been produced by modern technology. Thus, it is quite suitable as a primary reference material validating the correctness and the detection capabilities of developed analytical methods. Among them neutron activation analysis plays a competitive role. The U.S. National Institute of Science and Technology (NIST) has initiated and carried out an interlaboratory comparison in order to study the spread of analytical results worldwide evolved by several laboratories dealing with specimens of extreme purity. The outcome of the experiment was intended to review the capabilities of NAA as well as to differentiate between bulk and surface contamination. (orig./DG)

  15. Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

    Science.gov (United States)

    Raghavan, Ashwin S.

    The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances

  16. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  17. Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

    International Nuclear Information System (INIS)

    Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

    2013-01-01

    This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

  18. Silicon Wafer-Based Platinum Microelectrode Array Biosensor for Near Real-Time Measurement of Glutamate in Vivo

    Directory of Open Access Journals (Sweden)

    Nigel T. Maidment

    2008-08-01

    Full Text Available Using Micro-Electro-Mechanical-Systems (MEMS technologies, we have developed silicon wafer-based platinum microelectrode arrays (MEAs modified with glutamate oxidase (GluOx for electroenzymatic detection of glutamate in vivo. These MEAs were designed to have optimal spatial resolution for in vivo recordings. Selective detection of glutamate in the presence of the electroactive interferents, dopamine and ascorbic acid, was attained by deposition of polypyrrole and Nafion. The sensors responded to glutamate with a limit of detection under 1μM and a sub-1-second response time in solution. In addition to extensive in vitro characterization, the utility of these MEA glutamate biosensors was also established in vivo. In the anesthetized rat, these MEA glutamate biosensors were used for detection of cortically-evoked glutamate release in the ventral striatum. The MEA biosensors also were applied to the detection of stress-induced glutamate release in the dorsal striatum of the freely-moving rat.

  19. Analysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devices

    International Nuclear Information System (INIS)

    Yoon, Sang Won; Lee, Sangwoo; Najafi, Khalil; Perkins, Noel C

    2011-01-01

    This paper presents the analysis and preliminary design, fabrication, and measurement for mechanical vibration-isolation platforms especially designed for resonating MEMS devices including gyroscopes. Important parameters for designing isolation platforms are specified and the first platform (in designs with cascaded multiple platforms) is crucial for improving vibration-isolation performance and minimizing side-effects on integrated gyroscopes. This isolation platform, made from a thick silicon wafer substrate for an environment-resistant MEMS package, incorporates the functionalities of a previous design including vacuum packaging and thermal resistance with no additional resources. This platform consists of platform mass, isolation beams, vertical feedthroughs, and bonding pads. Two isolation platform designs follow from two isolation beam designs: lateral clamped–clamped beams and vertical torsion beams. The beams function simultaneously as mechanical springs and electrical interconnects. The vibration-isolation platform can yield a multi-dimensional, high-order mechanical low pass filter. The isolation platform possesses eight interconnects within a 12.2 × 12.2 mm 2 footprint. The contact resistance ranges from 4–11 Ω depending on the beam design. Vibration measurements using a laser-Doppler vibrometer demonstrate that the lateral vibration-isolation platform suppresses external vibration having frequencies exceeding 2.1 kHz.

  20. Electrodeposition of three-dimensionally assembled platinum spheres on a gold-coated silicon wafer, and its application to nonenzymatic sensing of glucose

    International Nuclear Information System (INIS)

    Roh, Seongjin; Kim, Jongwon

    2015-01-01

    We report on a method of single-step electrodeposition of three-dimensionally (3-D) assembled Pt spheres on a gold-coated silicon wafer. The 3-D interconnected Pt spheres could be electrodeposited by applying a negative potential (−0.8 V, vs. Ag/AgCl) in neutral electrolytes containing KClO 4 . The application of such a negative potential is not possible in acidic solutions because of the formation of hydrogen. Scanning electron microscopy revealed that the seed Pt particles first grew to a certain size, and then form Pt spheres interconnected in multiple layers. The resulting 3-D assembled Pt sphere structures warrants a high surface area, and this property was utilized for the selective and sensitive amperometric determination of glucose at a working potential of 0.4 V (vs. Ag/AgCl), at near neutral pH values and in the presence of 0.1 M chloride. This straightforward method for the fabrication of 3-D assembled Pt sphere structures offers new opportunities for electroanalytical and electrocatalytic sensing based on porous Pt surfaces (author)

  1. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  2. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  3. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  4. Determination of ultra-trace contaminants on silicon wafer surfaces using TXRF. Present state of the art

    International Nuclear Information System (INIS)

    Pahlke, S.; Fabry, L.; Kotz, L.; Mantler, C.; Ehmann, T.

    2000-01-01

    Recently, TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use now up to 300 diameter. Wafer makers strive for an all-over metallic cleanliness of 10 atoms x cm -2 . Therefore an analytical tools must cover LOD in a range 9 atoms x cm -2 or lower. The all-over cleanliness of the whole wafer surface can analyzed using VPD/TXRF. For this chemical wafer-pre-preparation under cleanroom conditions class 1 we have developed a full automatic 'Wafer Surface Preparation System' coupled with a new generation TXRF. We have also combined this system with other independent methods for Na, Al, anions and cations. Only the combination of automatic wafer handling systems, modem analytical tools, ultra-pure water, ULSI chemicals and special cleanroom conditions provides us a chance to achieve the present and the future demands for semiconductor industry. (author)

  5. Optothermal response of a single silicon nanotip

    Science.gov (United States)

    Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

    2018-02-01

    The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

  6. Wafer of Intel Pentium 4 Prescott Chips

    CERN Multimedia

    Silicon wafer with hundreds of Penryn cores (microprocessor). There are around four times as many Prescott chips can be made per wafer than with the previous generation of Northwood-core Pentium 4 processors. It is faster and cheaper.

  7. Single Photon Sources in Silicon Carbide

    International Nuclear Information System (INIS)

    Brett Johnson

    2014-01-01

    Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

  8. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  9. Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

    International Nuclear Information System (INIS)

    Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

    2007-01-01

    Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

  10. A facility for plastic deformation of germanium single-crystal wafers

    DEFF Research Database (Denmark)

    Lebech, B.; Theodor, K.; Breiting, B.

    1998-01-01

    . All movements and temperature changes are done by a robot via a PLC-control system. Two nine-crystal focusing monochromators (54 x 116 and 70 x 116 mm(2)) made from 100 wafers with average mosaicity similar to 13' have been constructed. Summaries of the test results are presented. (C) 1998 Elsevier...

  11. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

  12. Stress and phase changes in a low-thermal-expansion Al-3at.%Ge alloy film on oxidized silicon wafers

    International Nuclear Information System (INIS)

    Tu, K.N.; Rodbell, K.P.; Herd, S.R.; Mikalsen, D.J.

    1993-01-01

    The alloy of Al-3at.%Ge has been found to have a low thermal expansion and contraction in the temperature range of room temperature to 400 C. The reason for the low thermal contraction (or expansion) is the precipitation (or dissolution) of Ge in the alloy. The Ge precipitates have a diamond structure in which each Ge atom occupies a much larger atomic volume than a Ge atom dissolved substitutionally in Al. The volume difference compensates for the effect of thermal expansion and contraction with changing temperature which in turn reduces the thermal stress due to thermal mismatch. The technique of wafer bending was used to determine the stress of the alloy film on oxidized silicon wafers upon thermal cycling; indeed, it is much lower than that of pure Al on identical wafers. The morphology of precipitation and dissolution of Ge in Al has been studied by transmission and scanning electron microscopy. It is found that the precipitation follows a discontinuous mode and occurs predominantly along grain boundaries. In dissolving the Ge precipitates into Al, voids are left behind because of the volume difference. It is proposed that this may explain the enhancement of nucleation of voids in the alloy film upon thermal cycling. (orig.)

  13. Robust Wafer-Level Thin-Film Encapsulation (Packaging) of Microstructures (MEMS) using Low Stress PECVD Silicon Carbide

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Pham, H.T.M.; Sarro, P.M.; French, P.J.

    2009-01-01

    This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide

  14. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  15. An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers.

    Science.gov (United States)

    Partanen, J; Tuomi, T

    1990-01-01

    X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph.

  16. MICROSTRUCTURING OF SILICON SINGLE CRYSTALS BY FIBER LASER IN HIGH-SPEED SCANNING MODE

    Directory of Open Access Journals (Sweden)

    T. A. Trifonova

    2015-11-01

    Full Text Available Subject of Study. The surface structure of the silicon wafers (substrate with a thermally grown silicon dioxide on the surface (of SiO2/Si is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111 with the source (natural silicon dioxide (SiO2 with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100 with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film

  17. Elastocapillary folding of three dimensional micro-structures using water pumped through the wafer via a silicon nitride tube

    NARCIS (Netherlands)

    Legrain, A.B.H.; Berenschot, Johan W.; Sanders, Remco G.P.; Ma, Kechun; Tas, Niels Roelof; Abelmann, Leon

    2011-01-01

    In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water

  18. Electrostatic bonding of thin (cycle sine 3 mil) 7070 cover glass to Ta2O5 AR-coated thin (cycle sine 2 mil) silicon wafers and solar cells

    Science.gov (United States)

    Egelkrout, D. W.

    1981-01-01

    Electrostatic bonding of thin cover glass to thin solar cells was researched. Silicon solar cells, wafers, and Corning 7070 glass of from about 0.002" to about 0.003" in thickness were used in the investigation to establish optimum parameters for producing mechanically acceptable bonds while minimizing thermal stresses and resultant solar cell electrical parameter degradation.

  19. Serial section scanning electron microscopy (S3EM) on silicon wafers for ultra-structural volume imaging of cells and tissues.

    Science.gov (United States)

    Horstmann, Heinz; Körber, Christoph; Sätzler, Kurt; Aydin, Daniel; Kuner, Thomas

    2012-01-01

    High resolution, three-dimensional (3D) representations of cellular ultrastructure are essential for structure function studies in all areas of cell biology. While limited subcellular volumes have been routinely examined using serial section transmission electron microscopy (ssTEM), complete ultrastructural reconstructions of large volumes, entire cells or even tissue are difficult to achieve using ssTEM. Here, we introduce a novel approach combining serial sectioning of tissue with scanning electron microscopy (SEM) using a conductive silicon wafer as a support. Ribbons containing hundreds of 35 nm thick sections can be generated and imaged on the wafer at a lateral pixel resolution of 3.7 nm by recording the backscattered electrons with the in-lens detector of the SEM. The resulting electron micrographs are qualitatively comparable to those obtained by conventional TEM. S(3)EM images of the same region of interest in consecutive sections can be used for 3D reconstructions of large structures. We demonstrate the potential of this approach by reconstructing a 31.7 µm(3) volume of a calyx of Held presynaptic terminal. The approach introduced here, Serial Section SEM (S(3)EM), for the first time provides the possibility to obtain 3D ultrastructure of large volumes with high resolution and to selectively and repetitively home in on structures of interest. S(3)EM accelerates process duration, is amenable to full automation and can be implemented with standard instrumentation.

  20. Serial section scanning electron microscopy (S3EM on silicon wafers for ultra-structural volume imaging of cells and tissues.

    Directory of Open Access Journals (Sweden)

    Heinz Horstmann

    Full Text Available High resolution, three-dimensional (3D representations of cellular ultrastructure are essential for structure function studies in all areas of cell biology. While limited subcellular volumes have been routinely examined using serial section transmission electron microscopy (ssTEM, complete ultrastructural reconstructions of large volumes, entire cells or even tissue are difficult to achieve using ssTEM. Here, we introduce a novel approach combining serial sectioning of tissue with scanning electron microscopy (SEM using a conductive silicon wafer as a support. Ribbons containing hundreds of 35 nm thick sections can be generated and imaged on the wafer at a lateral pixel resolution of 3.7 nm by recording the backscattered electrons with the in-lens detector of the SEM. The resulting electron micrographs are qualitatively comparable to those obtained by conventional TEM. S(3EM images of the same region of interest in consecutive sections can be used for 3D reconstructions of large structures. We demonstrate the potential of this approach by reconstructing a 31.7 µm(3 volume of a calyx of Held presynaptic terminal. The approach introduced here, Serial Section SEM (S(3EM, for the first time provides the possibility to obtain 3D ultrastructure of large volumes with high resolution and to selectively and repetitively home in on structures of interest. S(3EM accelerates process duration, is amenable to full automation and can be implemented with standard instrumentation.

  1. A simple chemical method for the separation of phosphorus interfering the trace element determinations by neutron activation analysis in high doped silicon wafers

    International Nuclear Information System (INIS)

    Wagler, H.; Flachowsky, J.

    1986-01-01

    Neutron activation analysis is one of the most available method for the determination of trace elements, but in the case of P-doped silicon wafers the 32 P-activity interferes the gamma spectrometry. It is not possible to determine the trace elements without chemical manipulations. On the other hand, time consuming chemical separations should be avoided. Therefore, a simple and rapid P-separation method has to be developed, in which the following twelve trace elements should be taken into consideration: Ag, As, Au, Co, Cr, Cu, Fe, Mo, Na, Sb, W, and Zn. After acid oxidative dissolution of the activated sample, P is present as phosphate ion. The phosphate ion is removed by precipitation as BiPO 4 . (author)

  2. Crystallization behavior of polyethylene on silicon wafers in solution casting processes traced by time-resolved measurements of synchrotron grazing-incidence small-angle and wide-angle X-ray scattering

    International Nuclear Information System (INIS)

    Sasaki, S; Masunaga, H; Takata, M; Itou, K; Tashiro, K; Okuda, H; Takahara, A

    2009-01-01

    Crystallization behavior of polyethylene (PE) on silicon wafers in solution casting processes has been successfully traced by time-resolved grazing-incidence small-angle and wide-angle X-ray scattering (GISWAXS) measurements utilizing synchrotron radiation. A p-xylene solution of PE kept at ca. 343 K was dropped on a silicon wafer at ca. 298 K. While the p-xylene evaporated naturally from the dropped solution sample, PE chains crystallized to be a thin film. Raman spectral measurements were performed simultaneously with the GISWAXS measurements to evaluate quantitatively the p-xylene the dropped solution contained. Grazing-incidence wide-angle X-ray scattering (GIWAXS) patterns indicated nucleation and crystal growth in the dropped solution and the following as-cast film. GIWAXS and Raman spectral data revealed that crystallization of PE was enhanced after complete evaporation of the p-xylene from the dropped solution. The [110] and [200] directions of the orthorhombic PE crystal became relatively parallel to the wafer surface with time, which implied that the flat-on lamellae with respect to the wafer surface were mainly formed in the as-cast film. On the other hand, grazing-incidence small-angle X-ray scattering (GISAXS) patterns implied formation of isolated lamellae in the dropped solution. The lamellae and amorphous might alternatively be stacked in the preferred direction perpendicular to the wafer surface. The synchrotron GISWAXS experimental method could be applied for kinetic study on hierarchical structure of polymer thin films.

  3. Wafer bonding applications and technology

    CERN Document Server

    Gösele, Ulrich

    2004-01-01

    During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

  4. Resistivity distribution of silicon single crystals using codoping

    Science.gov (United States)

    Wang, Jong Hoe

    2005-07-01

    Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

  5. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  6. Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers.

    Science.gov (United States)

    Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

    2010-02-20

    The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K(alpha)0.28 keV and Al K(alpha)1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K(alpha) (approximately 6 nm rms) is significantly larger than approximately 1 nm at Al K(alpha). This can be explained by different coherent lengths at two energies.

  7. Evaluation of the soft x-ray reflectivity of micropore optics using anisotropic wet etching of silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Koshiishi, Masaki; Mita, Makoto; Maeda, Yoshitomo; Yamasaki, Noriko Y.; Mitsuda, Kazuhisa; Shirata, Takayuki; Hayashi, Takayuki; Takano, Takayuki; Maeda, Ryutaro

    2010-02-20

    The x-ray reflectivity of an ultralightweight and low-cost x-ray optic using anisotropic wet etching of Si (110) wafers is evaluated at two energies, C K{alpha}0.28 keV and Al K{alpha}1.49 keV. The obtained reflectivities at both energies are not represented by a simple planar mirror model considering surface roughness. Hence, an geometrical occultation effect due to step structures upon the etched mirror surface is taken into account. Then, the reflectivities are represented by the theoretical model. The estimated surface roughness at C K{alpha} ({approx}6 nm rms) is significantly larger than {approx}1 nm at Al K{alpha}. This can be explained by different coherent lengths at two energies.

  8. Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers

    International Nuclear Information System (INIS)

    Sultan, D.M.S.; Mendicino, R.; Betta, G.-F. Dalla; Boscardin, M.; Ronchin, S.; Zorzi, N.

    2015-01-01

    Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades

  9. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

    Science.gov (United States)

    Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

    2013-11-22

    Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  10. Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers.

    Science.gov (United States)

    Wang, Yu; Yu, Kai; Qi, H Jerry; Xiao, Jianliang

    2017-10-25

    Shape memory polymers (SMPs) can remember two or more distinct shapes, and thus can have a lot of potential applications. This paper presents combined experimental and theoretical studies on the wrinkling of single-crystal Si ribbons on SMPs and the temperature dependent evolution. Using the shape memory effect of heat responsive SMPs, this study provides a method to build wavy forms of single-crystal silicon thin films on top of SMP substrates. Silicon ribbons obtained from a Si-on-insulator (SOI) wafer are released and transferred onto the surface of programmed SMPs. Then such bilayer systems are recovered at different temperatures, yielding well-defined, wavy profiles of Si ribbons. The wavy profiles are shown to evolve with time, and the evolution behavior strongly depends on the recovery temperature. At relatively low recovery temperatures, both wrinkle wavelength and amplitude increase with time as evolution progresses. Finite element analysis (FEA) accounting for the thermomechanical behavior of SMPs is conducted to study the wrinkling of Si ribbons on SMPs, which shows good agreement with experiment. Merging of wrinkles is observed in FEA, which could explain the increase of wrinkle wavelength observed in the experiment. This study can have important implications for smart stretchable electronics, wrinkling mechanics, stimuli-responsive surface engineering, and advanced manufacturing.

  11. Silicon Nanowire Fabrication Using Edge and Corner Lithography

    NARCIS (Netherlands)

    Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

    2010-01-01

    This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

  12. Silicon Dioxide Thin Film Mediated Single Cell Nucleic Acid Isolation

    Science.gov (United States)

    Bogdanov, Evgeny; Dominova, Irina; Shusharina, Natalia; Botman, Stepan; Kasymov, Vitaliy; Patrushev, Maksim

    2013-01-01

    A limited amount of DNA extracted from single cells, and the development of single cell diagnostics make it necessary to create a new highly effective method for the single cells nucleic acids isolation. In this paper, we propose the DNA isolation method from biomaterials with limited DNA quantity in sample, and from samples with degradable DNA based on the use of solid-phase adsorbent silicon dioxide nanofilm deposited on the inner surface of PCR tube. PMID:23874571

  13. Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

    Science.gov (United States)

    Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

    2018-03-01

    We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

  14. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

    Directory of Open Access Journals (Sweden)

    Kenji Okabe

    2015-12-01

    Full Text Available In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI chip on the very thin parylene film (5 μm enables the integration of the rectifier circuits and the flexible antenna (rectenna. In the demonstration of wireless power transmission (WPT, the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  15. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

    Science.gov (United States)

    Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

    2015-12-16

    In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  16. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  17. Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast

    Energy Technology Data Exchange (ETDEWEB)

    Argunova, T. S., E-mail: argunova2002@mail.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Kohn, V. G. [National Research Centre “Kurchatov Institute” (Russian Federation); Lim, J. H. [Pohang Accelerator Laboratory (Korea, Republic of); Je, J. H. [Pohang University of Science and Technology, Department of Materials Science and Engineering (Korea, Republic of)

    2016-11-15

    The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown beforehand.

  18. Controlling growth density and patterning of single crystalline silicon nanowires

    International Nuclear Information System (INIS)

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  19. Reduction of absorption loss in multicrystalline silicon via combination of mechanical grooving and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    Surface texturing of silicon wafer is a key step to enhance light absorption and to improve the solar cell performances. While alkaline-texturing of single crystalline silicon wafers was well established, no efficient chemical solution has been successfully developed for multicrystalline silicon wafers. Thus, the use of alternative new methods for effective texturization of multicrystalline silicon is worth to be investigated. One of the promising texturing techniques of multicrystalline silicon wafers is the use of mechanical grooves. However, most often, physical damages occur during mechanical grooves of the wafer surface, which in turn require an additional step of wet processing-removal damage. Electrochemical surface treatment seems to be an adequate solution for removing mechanical damage throughout porous silicon formation. The topography of untreated and porous silicon-treated mechanically textured surface was investigated using scanning electron microscopy (SEM). As a result of the electrochemical surface treatment, the total reflectivity drops to about 5% in the 400-1000 nm wavelength range and the effective minority carrier diffusion length enhances from 190 {mu}m to about 230 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Spectral diffusion of quasi localized excitons in single silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Joerg; Cichos, Frank [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany); Borczyskowski, Christian von, E-mail: Borczyskowski@physik.tu-chemnitz.de [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany)

    2012-08-15

    Evolution in time of photoluminescence spectra of SiO{sub x} capped single silicon nanocrystals has been investigated by means of confocal optical spectroscopy at room temperature. Large spectral jumps between subsequent spectra of up to 40 meV have been detected leading to noticeable line broadening and variation in the electron-phonon coupling. Further, a correlation between emission energy and emission intensity has been found and discussed in terms of an intrinsic Stark effect. Anti-correlated variations of the electron-phonon coupling to Si and SiO{sub 2} phonons as a function of photoluminescence energy indicate that the nearly localized excition is to some extent coupled to phonons in the shell covering the silicon nanocrystal. However, coupling is reduced upon increasing Stark effect, while at the same time coupling to phonons of the Si core increases. - Highlights: Black-Right-Pointing-Pointer Single silicon nanocrystals are detected via confocal microscopy. Black-Right-Pointing-Pointer Photoluminescence energies fluctuate strongly in time. Black-Right-Pointing-Pointer Spectral fluctuation is described in the form of spectral diffusion. Black-Right-Pointing-Pointer Dynamic processes are strongly controlled by electron-phonon coupling.

  1. Isolating and moving single atoms using silicon nanocrystals

    Science.gov (United States)

    Carroll, Malcolm S.

    2010-09-07

    A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

  2. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  3. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  4. The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

    Science.gov (United States)

    Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

    2017-10-01

    Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

  5. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  6. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  7. Anisotropy of Single-Crystal Silicon in Nanometric Cutting.

    Science.gov (United States)

    Wang, Zhiguo; Chen, Jiaxuan; Wang, Guilian; Bai, Qingshun; Liang, Yingchun

    2017-12-01

    The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.

  8. Comparison of aggregation behaviors between ionic liquid-type imidazolium gemini surfactant [C12-4-C12im]Br2 and its monomer [C12mim]Br on silicon wafer.

    Science.gov (United States)

    Ao, Mingqi; Xu, Guiying; Pang, Jinyu; Zhao, Taotao

    2009-09-01

    The aggregation of ionic liquid-type imidazolium gemini surfactant [C(12)-4-C(12)im]Br(2) on silicon wafer, which is compared with its monomer [C(12)mim]Br, have been studied. AFM morphology images and contact angle measurements suggest that the aggregations of [C(12)-4-C(12)im]Br(2) and [C(12)mim]Br on silicon wafer follow different mechanisms. Below the critical surface aggregation concentrations (CSAC), both surfactant molecules are adsorbed with their hydrophobic tails facing the air. But above the CSAC, [C(12)-4-C(12)im]Br(2) molecules finally form a bilayer structure with hydrophilic head groups facing the air, whereas [C(12)mim]Br molecules form a multilayer structure, and with increasing its concentration, the layer numbers increase with the hydrophobic chains and hydrophilic head groups facing the air by turns. Besides, the watery wettability of [C(12)-4-C(12)im]Br(2)-treated silica surface is lower than that of [C(12)mim]Br at the concentration of 5.0 cmc, and the infrared spectroscopy suggests that the poorer watery wettability of [C(12)-4-C(12)im]Br(2) may be relative to the less-ordered packing of methylene chains inside the aggregate. These different aggregation behaviors for the two surfactants ascribe to the different molecular structures and electrostatic interactions. This work would have certain theoretical guidance meaning on the modification of solid surface.

  9. Single-phase {beta}-FeSi{sub 2} thin films prepared on Si wafer by femtosecond laser ablation and its photoluminescence at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Lu Peixiang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)]. E-mail: lupeixiang@mail.hust.edu.cn; Zhou Youhua [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China) and Physics and Information School, Jianghan University, Wuhan 430056 (China)]. E-mail: yhzhou@jhun.edu.cn; Zheng Qiguang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yang Guang [State Key Laboratory of Laser Technology and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2006-02-06

    Single-phase {beta}-FeSi{sub 2} thin films were prepared on Si(100) and Si(111) wafers by using femtosecond laser deposition with a FeSi{sub 2} alloy target for the first time. X-ray diffraction (XRD), field scanning electron microscopy (FSEM), scanning probe microscopy (SPM), electron backscattered diffraction pattern (EBSD), and Fourier-transform Raman infrared spectroscopy (FTRIS) were used to characterize the structure, composition, and properties of the {beta}-FeSi{sub 2}/Si films. The orientation of {beta}-FeSi{sub 2} grains was found to depend on the orientation of the Si substrates, and photoluminescence at wavelength of 1.53 {mu}m was observed from the single-phase {beta}-FeSi{sub 2}/Si thin film at room temperature (20 {sup o}C)

  10. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  11. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  12. Microthermogravimetry of a single microcapsule using silicon microresonators.

    Science.gov (United States)

    Lee, Dongkyu; Park, Yongbeom; Cho, Soo Hyoun; Yoo, Myungsun; Jung, Namchul; Yun, Minhyuk; Ko, Wooree; Jeon, Sangmin

    2010-07-01

    A chlorobenzene-containing polyurethane microcapsule was placed on the free end of a silicon cantilever, and the temperature dependence of the resonance frequency was measured. As the cantilever was heated, the resonance frequency showed steplike increases at 109 and 270 degrees C that were due to the rupture of the capsule and the thermal degradation of the polyurethane shell, respectively. The frequency changes due to the rupture of a single capsule measured by the cantilever were much sharper than the transitions measured by conventional thermogravimetric analysis (TGA), which measures the average mass change of a collection of capsules characterized by a large size distribution. When two capsules were placed on the cantilever, their individual rupture temperatures could be clearly identified. In addition, the permeability of the polyurethane shell, with respect to chlorobenzene, was measured, and the rupture temperature was observed to decrease with increasing permeability.

  13. The uses of Man-Made diamond in wafering applications

    Science.gov (United States)

    Fallon, D. B.

    1982-01-01

    The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

  14. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  15. Creating and Controlling Single Spins in Silicon Carbide

    Science.gov (United States)

    Christle, David

    Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.

  16. RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

    International Nuclear Information System (INIS)

    Irwin, R.B.

    1984-01-01

    Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

  17. Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

    International Nuclear Information System (INIS)

    Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

    2015-01-01

    Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

  18. New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

    Science.gov (United States)

    Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

    2017-06-01

    In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay

  19. Wafer level packaging of MEMS

    International Nuclear Information System (INIS)

    Esashi, Masayoshi

    2008-01-01

    Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review. (topical review)

  20. I-line stepper based overlay evaluation method for wafer bonding applications

    Science.gov (United States)

    Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

    2018-03-01

    In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the

  1. Buckling of Single-Crystal Silicon Nanolines under Indentation

    Directory of Open Access Journals (Sweden)

    Min K. Kang

    2008-01-01

    Full Text Available Atomic force microscope-(AFM- based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.

  2. Wafer-Level Membrane-Transfer Process for Fabricating MEMS

    Science.gov (United States)

    Yang, Eui-Hyeok; Wiberg, Dean

    2003-01-01

    A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

  3. Fabrication of a novel silicon single electron transistor for Si:P quantum computer devices

    International Nuclear Information System (INIS)

    Angus, S.J.; Smith, C.E.A.; Gauja, E.; Dzurak, A.S.; Clark, R.G.; Snider, G.L.

    2004-01-01

    Full text: Quantum computation relies on the successful measurement of quantum states. Single electron transistors (SETs) are known to be able to perform fast and sensitive charge measurements of solid state qubits. However, due to their sensitivity, SETs are also very susceptible to random charge fluctuations in a solid-state materials environment. In previous dc transport measurements, silicon-based SETs have demonstrated greater charge stability than A1/A1 2 O 3 SETs. We have designed and fabricated a novel silicon SET architecture for a comparison of the noise characteristics of silicon and aluminium based devices. The silicon SET described here is designed for controllable and reproducible low temperature operation. It is fabricated using a novel dual gate structure on a silicon-on-insulator substrate. A silicon quantum wire is formed in a 100nm thick high-resistivity superficial silicon layer using reactive ion etching. Carriers are induced in the silicon wire by a back gate in the silicon substrate. The tunnel barriers are created electrostatically, using lithographically defined metallic electrodes (∼40nm width). These tunnel barriers surround the surface of the quantum wire, thus producing excellent electrostatic confinement. This architecture provides independent control of tunnel barrier height and island occupancy, thus promising better control of Coulomb blockade oscillations than in previously investigated silicon SETs. The use of a near intrinsic silicon substrate offers compatibility with Si:P qubits in the longer term

  4. Transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  5. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

    2013-04-15

    Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

  6. Development of thin film measurement program of wafer for spin etcher

    International Nuclear Information System (INIS)

    Seo, Hak Suk; Kim, No Hyu; Kim, Young Chul; Cho, Jung Keun; Bae, Jung Yong

    2001-01-01

    This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12 inch silicon wafer for spin etcher. Krypton lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and filtering. Test wafers with two kinds of priori-known films, silicon-oxide(100nm) and poly-silicon(300nm), are measured under the condition that the wafer is spinning at 20Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 6.5% error.

  7. Development of thin film measurement program of wafer for spin etcher

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Hak Suk; Kim, No Hyu; Kim, Young Chul [Korea University of Technology and Education, Cheonan (Korea, Republic of); Cho, Jung Keun; Bae, Jung Yong [Korea DNS, Cheonan (Korea, Republic of)

    2001-11-15

    This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12 inch silicon wafer for spin etcher. Krypton lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and filtering. Test wafers with two kinds of priori-known films, silicon-oxide(100nm) and poly-silicon(300nm), are measured under the condition that the wafer is spinning at 20Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 6.5% error.

  8. Silicon Nanowire Field-effect Chemical Sensor

    OpenAIRE

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A novel top-down fabrication technique was presented for single-crystal Si-NW fabrication realized with conventional microfabrication technique. High quality triangular Si-NWs were made with high wafer-s...

  9. Strong coupling of a single electron in silicon to a microwave photon

    Science.gov (United States)

    Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

    2017-01-01

    Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

  10. Rehabilitation of single finger amputation with customized silicone prosthesis

    OpenAIRE

    Yadav, Niharika; Chand, Pooran; Jurel, Sunit Kumar

    2016-01-01

    Finger amputations are common in accidents at home, work, and play. Apart from trauma, congenital disease and deformity also leads to finger amputation. This results in loss of function, loss of sensation as well as loss of body image. Finger prosthesis offers psychological support and social acceptance in such cases. This clinical report describes a method to fabricate ring retained silicone finger prosthesis in a patient with partial finger loss.

  11. Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

    Science.gov (United States)

    Turner, K. T.; Spearing, S. M.

    2002-12-01

    Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

  12. Reticle variation influence on manufacturing line and wafer device performance

    Science.gov (United States)

    Nistler, John L.; Spurlock, Kyle

    1994-01-01

    Cost effective manufacturing of devices at 0.5, 0.35 and 0.25μm geometries will be highly dependent on a companys' ability to obtain an economic return on investment. The high capital investment in equipment and facilities, not to mention the related chemical and wafer costs, for producing 200mm silicon wafers requires aspects of wafer processing to be tightly controlled. Reduction in errors and enhanced yield management requires early correction or avoidance of reticle problems. It is becoming increasingly important to recognize and track all pertinent factors impacting both the technical and financial viability of a wafer manufacturing fabrication area. Reticle related effects on wafer manufacturing can be costly and affect the total quality perceived by the device customer.

  13. FY 1999 report on the results of R and D projects by local consortiums for immediate effects. R and D regarding high quality/high performance of lithium tantalate single crystal's solidifying growth and SAW wafer; 1999 nendo sankabutsu tankessho no ikusei to wafer no kohinshitsu konoritsuka ni kansuru kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    The R and D project has been implemented for establishing, e.g., methods for growing oxide single crystals (e.g., lithium tantalate, LiTaO{sub 3}) to have the large and/or long products, technologies for polishing/cleaing the wafer products, and technologies for evaluating device performance. For solidifying growth and production technologies for lithium tantalate single crystals, pulling-up of the single crystal, 154 mm in body length and 12.9 kg, is succeeded by reducing temperature gradient at the crystal solid-liquid interface, increasing oxygen concentration, and improving the seed-sustaining system. Bright prospects have been obtained for the automated crystal pulling-up system, and high-precision control of crystal weight. For technologies for polishing/cleaning the wafers, the investigated cleaning methods include ELID polishing, mechanochemical polishing, and supersonic cleaning which uses two frequency bands of multi-supersonic and megasonic waves. For development of the technologies for evaluation/examination of the highly functional devices, the non-contact type method has been developed, which can measure the absolute level of SAW speed at a high speed and precision. (NEDO)

  14. FY 1999 report on the results of R and D projects by local consortiums for immediate effects. R and D regarding high quality/high performance of lithium tantalate single crystal's solidifying growth and SAW wafer; 1999 nendo sankabutsu tankessho no ikusei to wafer no kohinshitsu konoritsuka ni kansuru kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    The R and D project has been implemented for establishing, e.g., methods for growing oxide single crystals (e.g., lithium tantalate, LiTaO{sub 3}) to have the large and/or long products, technologies for polishing/cleaing the wafer products, and technologies for evaluating device performance. For solidifying growth and production technologies for lithium tantalate single crystals, pulling-up of the single crystal, 154 mm in body length and 12.9 kg, is succeeded by reducing temperature gradient at the crystal solid-liquid interface, increasing oxygen concentration, and improving the seed-sustaining system. Bright prospects have been obtained for the automated crystal pulling-up system, and high-precision control of crystal weight. For technologies for polishing/cleaning the wafers, the investigated cleaning methods include ELID polishing, mechanochemical polishing, and supersonic cleaning which uses two frequency bands of multi-supersonic and megasonic waves. For development of the technologies for evaluation/examination of the highly functional devices, the non-contact type method has been developed, which can measure the absolute level of SAW speed at a high speed and precision. (NEDO)

  15. Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

    Directory of Open Access Journals (Sweden)

    Xiang Zhang

    2016-08-01

    Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

  16. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  17. Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

    Science.gov (United States)

    Shen, Jie; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Shahid, Ijaz; Zhang, Xiaofu; Yan, Sha; Le, Xiaoyun

    2018-04-01

    Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

  18. Acoustically driven degradation in single crystalline silicon solar cell

    Science.gov (United States)

    Olikh, O. Ya.

    2018-05-01

    The influence of ultrasound on current-voltage characteristics of crystalline silicon solar sell was investigated experimentally. The transverse and longitudinal acoustic waves were used over a temperature range of 290-340 K. It was found that the ultrasound loading leads to the reversible decrease in the photogenerated current, open-circuit voltage, fill factor, carrier lifetime, and shunt resistance as well as the increase in the ideality factor. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The contribution of the boron-oxygen related defects, iron-boron pairs, and oxide precipitates to both the carrier recombination and acousto-defect interaction was discussed. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations.

  19. The charge collection in single side silicon microstrip detectors

    CERN Document Server

    Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

    2003-01-01

    The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

  20. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  1. Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Djessas, K. [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Bouchama, I., E-mail: bouchama.idris@yahoo.fr [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Département d' Electronique, Faculté de Technologie, Université de Msila, 28000 (Algeria); Gauffier, J.L. [Département de Physique, INSA de Toulouse, 135 Avenue de Rangueil, 31077 Toulouse Cedex 4 (France); Ayadi, Z. Ben [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement (LaPhyMNE), Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia)

    2014-03-31

    In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [In]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol–gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10{sup −3} Ω·cm and high mobility of 4 cm{sup 2}/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p–n junction involved in an Au/In{sub 2}O{sub 3}:SnO{sub 2}/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density–voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%. - Highlights: • ZnO:In thin films were prepared by rf-magnetron sputtering. • No significant changes were observed in the ZnO:In properties. • In-doped ZnO shows superior electric properties compared with pure ZnO. • Interesting photovoltaic effect observed in ITO/ZnO:In(n)/c-Si(p) heterostructure • Good quality of p–n junction in the ZnO:In(n)/c-Si(p) solar cell.

  2. Genesis of nanostructured, magnetically tunable ceramics from the pyrolysis of cross-linked polyferrocenylsilane networks and formation of shaped macroscopic objects and micron scale patterns by micromolding inside silicon wafers.

    Science.gov (United States)

    Ginzburg, Madlen; MacLachlan, Mark J; Yang, San Ming; Coombs, Neil; Coyle, Thomas W; Raju, Nandyala P; Greedan, John E; Herber, Rolfe H; Ozin, Geoffrey A; Manners, Ian

    2002-03-20

    The ability to form molded or patterned metal-containing ceramics with tunable properties is desirable for many applications. In this paper we describe the evolution of a ceramic from a metal-containing polymer in which the variation of pyrolysis conditions facilitates control of ceramic structure and composition, influencing magnetic and mechanical properties. We have found that pyrolysis under nitrogen of a well-characterized cross-linked polyferrocenylsilane network derived from the ring-opening polymerization (ROP) of a spirocyclic [1]ferrocenophane precursor gives shaped macroscopic magnetic ceramics consisting of alpha-Fe nanoparticles embedded in a SiC/C/Si(3)N(4) matrix in greater than 90% yield up to 1000 degrees C. Variation of the pyrolysis temperature and time permitted control over the nucleation and growth of alpha-Fe particles, which ranged in size from around 15 to 700 A, and the crystallization of the surrounding matrix. The ceramics contained smaller alpha-Fe particles when prepared at temperatures lower than 900 degrees C and displayed superparamagnetic behavior, whereas the materials prepared at 1000 degrees C contained larger alpha-Fe particles and were ferromagnetic. This flexibility may be useful for particular materials applications. In addition, the composition of the ceramic was altered by changing the pyrolysis atmosphere to argon, which yielded ceramics that contain Fe(3)Si(5). The ceramics have been characterized by a combination of physical techniques, including powder X-ray diffraction, TEM, reflectance UV-vis/near-IR spectroscopy, elemental analysis, XPS, SQUID magnetometry, Mössbauer spectroscopy, nanoindentation, and SEM. Micromolding of the spirocyclic [1]ferrocenophane precursor within soft lithographically patterned channels housed inside silicon wafers followed by thermal ROP and pyrolysis enabled the formation of predetermined micron scale designs of the magnetic ceramic.

  3. Preparation and characterization of tempered tungsten layers on single crystalline silicon

    International Nuclear Information System (INIS)

    Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

    1984-01-01

    Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

  4. A comparison of gettering in single- and multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L. [National Renewable Energy Lab., Golden, CO (United States); Jastrzebski, L.; Tan, T.

    1996-05-01

    The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.

  5. Annihilation of unthermalized positrons in a silicon single crystal at 770K

    International Nuclear Information System (INIS)

    Zaitsev, Yu.E.; Mungir, L.; Ue'pe, L.R.

    1984-01-01

    A model is considered for the annihilation of nonrelativistic positrons from quantized states in lattice channels. Annihilation gamma rays of energy over 511 keV have been observed when the positrons from an Na 22 source strike a silicon single crystal at 77 0 K. The experimental results agree well with the proposed model

  6. Bright trions in direct-bandgap silicon nanocrystals revealed bylow-temperature single-nanocrystal spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Pelant, Ivan; Valenta, J.

    2015-01-01

    Roč. 4, Oct (2015), e336 ISSN 2047-7538 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * single-nanocrystal spectroscopy * luminescing trions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.600, year: 2015

  7. Evolution of single-particle structure of silicon isotopes

    Science.gov (United States)

    Bespalova, O. V.; Fedorov, N. A.; Klimochkina, A. A.; Markova, M. L.; Spasskaya, T. I.; Tretyakova, T. Yu.

    2018-01-01

    New data on proton and neutron single-particle energies E_{nlj} of Si isotopes with neutron number N from 12 to 28 as well as occupation probabilities N_{nlj} of single-particle states of stable isotopes 28, 30Si near the Fermi energy were obtained by the joint evaluation of the stripping and pick-up reaction data and excited state decay schemes of neighboring nuclei. The evaluated data indicate the following features of single-particle structure evolution: persistence of Z = 14 subshell closure with N increase, the new magicity of the number N = 16, and the conservation of the magic properties of the number N = 20 in Si isotopic chain. The features were described by the dispersive optical model. The calculation also predicts the weakening of N = 28 shell closure and demonstrates evolution of a bubble-like structure of the proton density distributions in neutron-rich Si isotopes.

  8. Evolution of single-particle structure of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Bespalova, O.V.; Klimochkina, A.A.; Spasskaya, T.I.; Tretyakova, T.Yu. [Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow (Russian Federation); Fedorov, N.A.; Markova, M.L. [Lomonosov Moscow State University, Faculty of Physics, Moscow (Russian Federation)

    2018-01-15

    New data on proton and neutron single-particle energies E{sub nlj} of Si isotopes with neutron number N from 12 to 28 as well as occupation probabilities N{sub nlj} of single-particle states of stable isotopes {sup 28,30}Si near the Fermi energy were obtained by the joint evaluation of the stripping and pick-up reaction data and excited state decay schemes of neighboring nuclei. The evaluated data indicate the following features of single-particle structure evolution: persistence of Z = 14 subshell closure with N increase, the new magicity of the number N = 16, and the conservation of the magic properties of the number N = 20 in Si isotopic chain. The features were described by the dispersive optical model. The calculation also predicts the weakening of N = 28 shell closure and demonstrates evolution of a bubble-like structure of the proton density distributions in neutron-rich Si isotopes. (orig.)

  9. Laser induced single-crystal transition in polycrystalline silicon

    International Nuclear Information System (INIS)

    Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.

    1978-01-01

    Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de

  10. 1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2017-05-10

    For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10 billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).

  11. Latest Advances in the Generation of Single Photons in Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Albert Boretti

    2016-06-01

    Full Text Available The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

  12. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  13. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  14. Analysis of single-photon time resolution of FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, Fabio; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-01-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm 2 and 3×3 mm 2 SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution

  15. Analysis of single-photon time resolution of FBK silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Acerbi, Fabio, E-mail: acerbi@fbk.eu; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-07-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm{sup 2} and 3×3 mm{sup 2} SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution.

  16. Wafer integrated micro-scale concentrating photovoltaics

    Science.gov (United States)

    Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

    2017-09-01

    Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

  17. PLA and single component silicone rubber blends for sub-zero temperature blown film packaging applications

    Science.gov (United States)

    Meekum, Utai; Khiansanoi, Apichart

    2018-06-01

    The poly(lactic acid) (PLA) blend with single component silicone rubber in the presence of reactive amino silane coupling agent and polyester polyols plasticizer were studied. The manufacturing of film packaging for sub-zero temperature applications from the PLA blend was the main objective. The mechanical properties, especially the impact strengths, of PLA/silicone blends were significantly depended on the silicone loading. The outstanding impact strengths, tested at sub-zero temperature, of the blend having silicone content of 8.0 phr was achieved. It was chosen as the best candidate for the processability improvement. Adding the talc filler into the PLA/silicone blend to enhance the rheological properties was investigated. The ductility of the talc filled blends were decreased with increasing the filler contents. However, the shear viscosity of the blend was raised with talc loading. The blend loaded with 40 phr of talc filler was justified as the optimal formula for the blown film process testing and it was successfully performed with a few difficulties. The obtained blown film showed relative good flexibility in comparison with LDPE but it has low transparency.

  18. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  19. Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

    Science.gov (United States)

    Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

    2016-03-01

    We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

  20. Microelectronic temperature sensor; silicon temperature sensor

    International Nuclear Information System (INIS)

    Beitner, M.; Kanert, W.; Reichert, H.

    1982-01-01

    The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

  1. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole

    2003-01-01

    and a final sealing at the interconnects can be performed using a suitable polymer. Packaged MEMS on glass are advantageous within Optical MEMS and for sensitive capacitive devices. We report on experiences with bonding SOI to Pyrex. Uniform DRIE shallow and deep etching was achieved by a combination......A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...... of an optimized device layout and an optimized process recipe. The behavior of the buried oxide membrane when used as an etch stop for the through-hole etch is described. No harmful buckling or fracture of the membrane is observed for an oxide thickness below 1 μm, but larger and more fragile released structures...

  2. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  3. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  4. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  5. Cost of Czochralski wafers as a function of diameter

    Science.gov (United States)

    Leipold, M. H.; Radics, C.; Kachare, A.

    1980-02-01

    The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/sq m (1980 $) depending upon technique used.

  6. Temperature effect on phase states of quartz nano-crystals in silicon single crystal

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

    2006-01-01

    Full text: Oxygen penetrates into the silicon lattice up to the concentration of 2·10 18 cm -3 in the course of growing [1]. By the author's opinion at a low oxygen content the formation of solid solution is possible in the local defect places of the silicon single crystal lattice due to the difference in effective ion radius of oxygen and silicon (r O 0.176 and r Si = 0.065 nm). Upon reaching some critical content (∼ 10 17 cm -3 ), it becomes favorable energetically for oxygen ions to form precipitates (SiO x ) and finally a dielectric layer (stoichiometric inclusions of SiO 2 ). It was shown later that depending on the growth conditions, indeed the quartz crystal inclusions are formed in the silicon single crystals at an amount of 0.3 /0.5 wt. % [2]. However the authors did not study a phase state of the quartz inclusions. Therefore the aim of this work was to study a phase state of the quartz inclusions in silicon crystal at various temperatures. We examined the silicon single crystals grown by Czochralski technique, which were cut in (111) plane in the form of disk of 20 mm diameter and 1.5 thickness and had hole conductivity with the specific resistance ρ o ≅ 1/10 Ohm cm. The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N 0 ≅ 2/ 4·10 17 cm -3 and N B ≅ 3*10 15 cm -3 . Structure was analyzed at the set-up DRON-UM1 with high temperature supply UVD-2000 ( CuK = 0.1542 nm) at the temperatures of 300, 1173 and 1573 K measured with platinum-platinum-rhodium thermocouple. The high temperature diffraction spectrum measured at 1573 K in the angle range (2Θ≅10/70 d egree ) there is only one main structure reflection (111) with a high intensity and d/n ≅ 0.3136 nm (2 Θ≅ 28.5 d egree ) from the matrix lattice of silicon single crystal. The weak line at 2 Θ≅ 25.5 d egree ( d/n≅0.3136 nm) is β component of the main reflection (111), and the weak structure peak at 2Θ≅59 d egree ( d/n≅ 0.1568 nm

  7. High-precision drop shape analysis (HPDSA) of quasistatic contact angles on silanized silicon wafers with different surface topographies during inclining-plate measurements: Influence of the surface roughness on the contact line dynamics

    International Nuclear Information System (INIS)

    Heib, F.; Hempelmann, R.; Munief, W.M.; Ingebrandt, S.; Fug, F.; Possart, W.; Groß, K.; Schmitt, M.

    2015-01-01

    Highlights: • Analysis of the triple line motion on surfaces with nanoscale surface topographies. • Analysis of the triple line motion is performed in sub-pixel resolution. • A special fitting and statistical approach for contact angle analysis is applied. • The analyses result set of contact angle data which is independent of “user-skills”. • Characteristically density distributions in dependence on the surface properties. - Abstract: Contact angles and wetting of solid surfaces are strongly influenced by the physical and chemical properties of the surfaces. These influence quantities are difficult to distinguish from each other if contact angle measurements are performed by measuring only the advancing θ a and the receding θ r contact angle. In this regard, time-dependent water contact angles are measured on two hydrophobic modified silicon wafers with different physical surface topographies. The first surface is nearly atomically flat while the second surface is patterned (alternating flat and nanoscale rough patterns) which is synthesized by a photolithography and etching procedure. The different surface topographies are characterized with atomic force microscopy (AFM), Fourier transform infrared reflection absorption spectroscopy (FTIRRAS) and Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR). The resulting set of contact angle data obtained by the high-precision drop shape analysis approach is further analyzed by a Gompertzian fitting procedure and a statistical counting procedure in dependence on the triple line velocity. The Gompertzian fit is used to analyze overall properties of the surface and dependencies between the motion on the front and the back edge of the droplets. The statistical counting procedure results in the calculation of expectation values E(p) and standard deviations σ(p) for the inclination angle φ, contact angle θ, triple line velocity vel and the covered distance of the triple line dis

  8. High-precision drop shape analysis (HPDSA) of quasistatic contact angles on silanized silicon wafers with different surface topographies during inclining-plate measurements: Influence of the surface roughness on the contact line dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Heib, F., E-mail: f.heib@mx.uni-saarland.de [Department of Physical Chemistry, Saarland University, 66123 Saarbrücken (Germany); Hempelmann, R. [Department of Physical Chemistry, Saarland University, 66123 Saarbrücken (Germany); Munief, W.M.; Ingebrandt, S. [Department of Informatics and Microsystem Technology, University of Applied Sciences, Kaiserslautern, 66482 Zweibrücken (Germany); Fug, F.; Possart, W. [Department of Adhesion and Interphases in Polymers, Saarland University, 66123 Saarbrücken (Germany); Groß, K.; Schmitt, M. [Department of Physical Chemistry, Saarland University, 66123 Saarbrücken (Germany)

    2015-07-01

    Highlights: • Analysis of the triple line motion on surfaces with nanoscale surface topographies. • Analysis of the triple line motion is performed in sub-pixel resolution. • A special fitting and statistical approach for contact angle analysis is applied. • The analyses result set of contact angle data which is independent of “user-skills”. • Characteristically density distributions in dependence on the surface properties. - Abstract: Contact angles and wetting of solid surfaces are strongly influenced by the physical and chemical properties of the surfaces. These influence quantities are difficult to distinguish from each other if contact angle measurements are performed by measuring only the advancing θ{sub a} and the receding θ{sub r} contact angle. In this regard, time-dependent water contact angles are measured on two hydrophobic modified silicon wafers with different physical surface topographies. The first surface is nearly atomically flat while the second surface is patterned (alternating flat and nanoscale rough patterns) which is synthesized by a photolithography and etching procedure. The different surface topographies are characterized with atomic force microscopy (AFM), Fourier transform infrared reflection absorption spectroscopy (FTIRRAS) and Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR). The resulting set of contact angle data obtained by the high-precision drop shape analysis approach is further analyzed by a Gompertzian fitting procedure and a statistical counting procedure in dependence on the triple line velocity. The Gompertzian fit is used to analyze overall properties of the surface and dependencies between the motion on the front and the back edge of the droplets. The statistical counting procedure results in the calculation of expectation values E(p) and standard deviations σ(p) for the inclination angle φ, contact angle θ, triple line velocity vel and the covered distance of the triple

  9. Handbook of wafer bonding

    CERN Document Server

    Ramm, Peter; Taklo, Maaike M V

    2011-01-01

    Written by an author and editor team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies.In the first part, researchers from companies and institutions around the world discuss the most reliable and reproducible technologies for the production of bonded wafers. The second part is devoted to current and emerging applications, including microresonators, biosensors and precise measuring devices.

  10. Silicon Wafer X-ray Mirror Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to undertake the initial development of a Kirkpatrick-Baez (K-B) type X-ray mirror using the relatively recent availability of high quality, inexpensive,...

  11. Silicon Wafer X-ray Mirror

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to undertake the initial development of a Kirkpatrick-Baez (K-B) type X-ray mirror using the relatively recent availability of high quality, inexpensive,...

  12. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, Vincent L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for as well resist spinning and layer patterning as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a

  13. CO2 laser-induced directional recrystallization to produce single crystal silicon-core optical fibers with low loss

    OpenAIRE

    Healy, Noel; Fokine, Michael; Franz, Yohann; Hawkins, Thomas; Jones, Maxwell; Ballato, John; Peacock, Anna C.; Gibson, Ursula J.

    2016-01-01

    Reduced losses in silicon-core fibers are obtained using CO2 laser directional recrystallization of the core. Single crystals with aspect ratios up to 1500:1 are reported, limited by the scan range of the equipment. This processing technique holds promise for bringing crystalline silicon-core fibers to a central role in nonlinear optics and signal processing applications.

  14. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

    Science.gov (United States)

    Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

    2018-03-01

    Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

  15. Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon

    Science.gov (United States)

    Luhman, D. R.; Nguyen, K.; Tracy, L. A.; Carr, S. M.; Borchardt, J.; Bishop, N. C.; Ten Eyck, G. A.; Pluym, T.; Wendt, J.; Carroll, M. S.; Lilly, M. P.

    2014-03-01

    The spin of an electron bound to a single donor implanted in silicon is potentially useful for quantum information processing. We report on our efforts to measure and manipulate the spin of an electron bound to a single P donor in silicon. A low number of P donors are implanted using a self-aligned process into a silicon substrate in close proximity to a single-electron-transistor (SET) defined by lithographically patterned polysilicon gates. The SET is used to sense the occupancy of the electron on the donor and for spin read-out. An adjacent transmission line allows the application of microwave pulses to rotate the spin of the electron. We will present data from various experiments designed to exploit these capabilities. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  16. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

    Energy Technology Data Exchange (ETDEWEB)

    Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

    2017-02-15

    Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

  17. Advantages and Disadvantages of Combined Chemotherapy with Carmustine Wafer and Bevacizumab in Patients with Newly Diagnosed Glioblastoma: A Single-Institutional Experience.

    Science.gov (United States)

    Akiyama, Yukinori; Kimura, Yuusuke; Enatsu, Rei; Mikami, Takeshi; Wanibuchi, Masahiko; Mikuni, Nobuhiro

    2018-05-01

    To retrospectively determine the safety and efficacy of combined chemotherapy with carmustine (BCNU) wafer, bevacizumab, and temozolomide plus radiotherapy in patients with newly diagnosed glioblastoma (GBM). A total of 54 consecutive newly diagnosed GBMs were resected at our institution between 2010 and 2016. Twenty-nine patients underwent BCNU wafer implantation into the resection cavity followed by standard radiochemotherapy with temozolomide (TMZ, Stupp regimen) plus additional bevacizumab treatment between 2013 and 2016. Twenty-five patients who underwent resection without BCNU implantation between 2010 and 2012 were enrolled as a control group; these patients were treated with the Stupp regimen and did not receive bevacizumab. This retrospective study included evaluation of progression-free survival and overall survival, plus comparisons between the combined therapy group and the control group. There were no significant differences in age, sex, Karnofsky Performance Status on admission, isocitrate dehydrogenase 1/2 mutation ratio, or resection rate between the combined and standard therapy groups. The median overall survival in the combined therapy group and control group was 24.2 months and 15.30, respectively (P = 0.027). The median progression-free survival was 16.8 months and 7.30 months, respectively (P = 0.009). Overall, the incidence of adverse events leading to discontinuation of the study drug was similar between the treatment groups, except for infection, which was more common in the combined treatment group and required repeat surgery. The combined therapy showed higher efficacy compared with standard therapy in patients with GBM. Therefore, combined therapy seems to be effective with an acceptable toxicity profile. Copyright © 2018 Elsevier Inc. All rights reserved.

  18. Electronic spectrum of a deterministic single-donor device in silicon

    International Nuclear Information System (INIS)

    Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2013-01-01

    We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants

  19. High surface area silicon materials: fundamentals and new technology.

    Science.gov (United States)

    Buriak, Jillian M

    2006-01-15

    Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

  20. The chemo-mechanical effect of cutting fluid on material removal in diamond scribing of silicon

    Science.gov (United States)

    Kumar, Arkadeep; Melkote, Shreyes N.

    2017-07-01

    The mechanical integrity of silicon wafers cut by diamond wire sawing depends on the damage (e.g., micro-cracks) caused by the cutting process. The damage type and extent depends on the material removal mode, i.e., ductile or brittle. This paper investigates the effect of cutting fluid on the mode of material removal in diamond scribing of single crystal silicon, which simulates the material removal process in diamond wire sawing of silicon wafers. We conducted scribing experiments with a diamond tipped indenter in the absence (dry) and in the presence of a water-based cutting fluid. We found that the cutting mode is more ductile when scribing in the presence of cutting fluid compared to dry scribing. We explain the experimental observations by the chemo-mechanical effect of the cutting fluid on silicon, which lowers its hardness and promotes ductile mode material removal.

  1. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon

    Science.gov (United States)

    Tracy, Lisa; Luhman, Dwight; Carr, Stephen; Borchardt, John; Bishop, Nathaniel; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Witzel, Wayne; Blume-Kohout, Robin; Nielsen, Erik; Lilly, Michael; Carroll, Malcolm

    In this talk we will discuss electron spin resonance experiments in single donor silicon qubit devices fabricated at Sandia National Labs. A self-aligned device structure consisting of a polysilicon gate SET located adjacent to the donor is used for donor electron spin readout. Using a cryogenic HEMT amplifier next to the silicon device, we demonstrate spin readout at 100 kHz bandwidth and Rabi oscillations with 0.96 visibility. Electron spin resonance measurements on these devices show a linewidth of 30 kHz and coherence times T2* = 10 us and T2 = 0.3 ms. We also discuss estimates of the fidelity of our donor electron spin qubit measurements using gate set tomography. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon.

  2. Single- and double- lumen silicone breast implant integrity: prospective evaluation of MR and US criteria.

    Science.gov (United States)

    Berg, W A; Caskey, C I; Hamper, U M; Kuhlman, J E; Anderson, N D; Chang, B W; Sheth, S; Zerhouni, E A

    1995-10-01

    To evaluate the accuracy of magnetic resonance (MR) and ultrasound (US) criteria for breast implant integrity. One hundred twenty-two single-lumen silicone breast implants and 22 bilumen implants were evaluated with surface coil MR imaging and US and surgically removed. MR criteria for implant failure were a collapsed implant shell ("linguine sign"), foci of silicone outside the shell ("noose sign"), and extracapsular gel, US criteria were collapsed shell, low-level echoes within the gel, and "snowstorm" echoes of extracapsular silicone. Among single-lumen implants, MR imaging depicted 39 of 40 ruptures, 14 of 28 with minimal leakage; 49 of 54 intact implants were correctly interpreted. US depicted 26 of 40 ruptured implants, four of 28 with minimal leakage, and 30 of 54 intact implants. Among bilumen implants, MR imaging depicted four of five implants with rupture of both lumina and nine of 10 as intact; US depicted one rupture and helped identify two of 10 as intact. Mammography accurately depicted the status of 29 of 30 bilumen implants with MR imaging correlation. MR imaging depicts implant integrity more accurately than US; neither method reliably depicts minimal leakage with shell collapse. Mammography is useful in screening bilumen implant integrity.

  3. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  4. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  5. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Johan W.; Sarajlic, Edin; Tas, Niels Roelof; Jansen, Henricus V.

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using $\\langle$111$\\rangle$ silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom

  6. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    International Nuclear Information System (INIS)

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I.; Bondarenko, V. P.; Ishikawa, Y.

    2011-01-01

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550°C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  7. IR and UV laser-induced morphological changes in silicon surface under oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Jarquin, J.; Fernandez-Guasti, M.; Haro-Poniatowski, E.; Hernandez-Pozos, J.L. [Laboratorio de Optica Cuantica, Departamento de Fisica, Universidad Autonoma Metropolitana-Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, C.P. 09340, Mexico D.F. (Mexico)

    2005-08-01

    We irradiated silicon (100) wafers with IR (1064 nm) and UV (355 nm) nanosecond laser pulses with energy densities within the ablation regime and used scanning electron microscopy to analyze the morphological changes induced on the Si surface. The changes in the wafer morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however if the experiment is carried out in O{sub 2} the final result is an array of microcones. We also employed a random scanning technique to irradiate the silicon wafer over large areas, in this case the microstructure patterns consist of a ''semi-ordered'' array of micron-sized cones. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

    Science.gov (United States)

    Tong, Q.-Y.; Gan, Q.; Fountain, G.; Enquist, P.; Scholz, R.; Gösele, U.

    2004-10-01

    The bonding energy of bonded native-oxide-covered silicon wafers treated in the HNO3/H2O/HF or the HNO3/HF solution prior to room-temperature contact is significantly higher than bonded standard RCA1 cleaned wafer pairs after low-temperature annealing. The bonding energy reaches over 2000mJ/m2 after annealing at 100 °C. The very slight etching and fluorine in the chemically grown oxide are believed to be the main contributors to the enhanced bonding energy. Transmission-electron-microscopic images have shown that the chemically formed native oxide at bonding interface is embedded with many flake-like cavities. The cavities can absorb the by-products of the interfacial reactions that result in covalent bond formation at low temperatures allowing the strong bond to be retained.

  9. Wafer scale integration of catalyst dots into nonplanar microsystems

    DEFF Research Database (Denmark)

    Gjerde, Kjetil; Kjelstrup-Hansen, Jakob; Gammelgaard, Lauge

    2007-01-01

    In order to successfully integrate bottom-up fabricated nanostructures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reliable ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm...... diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end...

  10. The microstructure matters: breaking down the barriers with single crystalline silicon as negative electrode in Li-ion batteries

    Science.gov (United States)

    Sternad, M.; Forster, M.; Wilkening, M.

    2016-01-01

    Silicon-based microelectronics forms a major foundation of our modern society. Small lithium-ion batteries act as the key enablers of its success and have revolutionised portable electronics used in our all everyday’s life. While large-scale LIBs are expected to help establish electric vehicles, on the other end of device size chip-integrated Si-based μ-batteries may revolutionise microelectronics once more. In general, Si is regarded as one of the white hopes since it offers energy densities being ten times higher than conventional anode materials. The use of monocrystalline, wafer-grade Si, however, requires several hurdles to be overcome since it its volume largely expands during lithiation. Here, we will show how 3D patterned Si wafers, prepared by the sophisticated techniques from semiconductor industry, are to be electrochemically activated to overcome these limitations and to leverage their full potential being reflected in stable charge capacities (>1000 mAhg–1) and high Coulomb efficiencies (98.8%). PMID:27531589

  11. Silicon Photomultipliers: Dark Current and its Statistical Spread

    Directory of Open Access Journals (Sweden)

    Roberto PAGANO

    2012-03-01

    Full Text Available Aim of this paper is to investigate on a statistical basis at the wafer level the relationship existing among the dark currents of the single pixel compared to the whole Silicon Photomultiplier array. This is the first time to our knowledge that such a comparison is made, crucial to pass this new technology to the semiconductor manufacturing standards. In particular, emission microscopy measurements and current measurements allowed us to conclude that optical trenches strongly improve the device performances.

  12. Efficient generation of single and entangled photons on a silicon photonic integrated chip

    International Nuclear Information System (INIS)

    Mower, Jacob; Englund, Dirk

    2011-01-01

    We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

  13. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    International Nuclear Information System (INIS)

    Miyoshi, K.; Buckley, D.H.

    1978-04-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

  14. In-depth study of single photon time resolution for the Philips digital silicon photomultiplier

    International Nuclear Information System (INIS)

    Liu, Z.; Pizzichemi, M.; Ghezzi, A.; Paganoni, M.; Gundacker, S.; Auffray, E.; Lecoq, P.

    2016-01-01

    The digital silicon photomultiplier (SiPM) has been commercialised by Philips as an innovative technology compared to analog silicon photomultiplier devices. The Philips digital SiPM, has a pair of time to digital converters (TDCs) connected to 12800 single photon avalanche diodes (SPADs). Detailed measurements were performed to understand the low photon time response of the Philips digital SiPM. The single photon time resolution (SPTR) of every single SPAD in a pixel consisting of 3200 SPADs was measured and an average value of 85 ps full width at half maximum (FWHM) was observed. Each SPAD sends the signal to the TDC with different signal propagation time, resulting in a so called trigger network skew. This distribution of the trigger network skew for a pixel (3200 SPADs) has been measured and a variation of 50 ps FWHM was extracted. The SPTR of the whole pixel is the combination of SPAD jitter, trigger network skew, and the SPAD non-uniformity. The SPTR of a complete pixel was 103 ps FWHM at 3.3 V above breakdown voltage. Further, the effect of the crosstalk at a low photon level has been studied, with the two photon time resolution degrading if the events are a combination of detected (true) photons and crosstalk events. Finally, the time response to multiple photons was investigated.

  15. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  16. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  17. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  18. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  19. Deflection of high energy channeled charged particles by elastically bent silicon single crystals

    International Nuclear Information System (INIS)

    Gibson, W.M.; Kim, I.J.; Pisharodoy, M.; Salman, S.M.; Sun, C.R.; Wang, G.H.; Wijayawardana, R.; Forster, J.S.; Mitchell, I.V.; Baker, S.I.; Carrigan, R.A. Jr.; Toohig, T.E.; Avdeichikov, V.V.; Ellison, J.A.; Siffert, P.

    1984-01-01

    An experiment has been carried out to observe the deflection of charged particles by planar channeling in bent single crystals of silicon for protons with energy up to 180 GeV. Anomolous loss of particles from the center point of a three point bending apparatus was observed at high incident particle energy. This effect has been exploited to fashion a 'dechanneling spectrometer' to study dechanneling effects due to centripital displacement of channeled particle trajectories in a bent crystal. The bending losses generally conform to the predictions of calculations based on a classical model. (orig.)

  20. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  1. Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Verkhovtseva, A. V.; Gergel, V. A.

    2009-01-01

    Statistical fluctuations of the avalanche's multiplication efficiency were studied as applied to the single-photon (Geiger) mode of avalanche photodiodes. The distribution function of partial multiplication factors with an anomalously wide (of the order of the average) dispersion was obtained. Expressions for partial feedback factors were derived in terms of the average gain and the corresponding dependences on the diode's overvoltage were calculated. Final expressions for the photon-electric pulse's conversion were derived by averaging corresponding formulas over the coordinate of initiating photoelectron generation using the functions of optical photon absorption in silicon.

  2. Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

    Science.gov (United States)

    Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

    2018-04-01

    In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

  3. Formation and properties of porous silicon layers

    International Nuclear Information System (INIS)

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  4. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  5. Functionalization of silicon-doped single walled carbon nanotubes at the doping site: An ab initio study

    International Nuclear Information System (INIS)

    Song Chen; Xia Yueyuan; Zhao Mingwen; Liu Xiangdong; Li Feng; Huang Boda; Zhang Hongyu; Zhang Bingyun

    2006-01-01

    We performed ab initio calculations on the cytosine-functionalized silicon-doped single walled carbon nanotubes (SWNT). The results show that silicon substitutional doping to SWNT can dramatically change the atomic and electronic structures of the SWNT. And more importantly, it may provide an efficient pathway for further sidewall functionalization to synthesize more complicated SWNT based complex materials, for example, our previously proposed base-functionalized SWNTs, because the doping silicon atom can improve the reaction activity of the tube at the doping site due to its preference to form sp3 hybridization bonding

  6. Optical properties of a single free standing nanodiamond

    Energy Technology Data Exchange (ETDEWEB)

    Sun, K W; Wang, C Y [Department of Applied Chemistry and Institute of Molecular Science, National Chiao Tung University, Hsinchu, 300, Taiwan (China)

    2007-12-15

    We report the techniques for measuring optical properties of a single nanometer-sized diamond. The electron beam (e-beam) lithography defined coordination markers on a silicon wafer provide us a convenient tool for allocating a single nanodiamond immobilized on the surface. By combining a confocal microscope with the e-beam lithography patterned smart substrate, we are able to measure the Raman and photoluminescence spectra from a single nanodiamond with a size less than 100 nm.

  7. Optical properties of a single free standing nanodiamond

    International Nuclear Information System (INIS)

    Sun, K W; Wang, C Y

    2007-01-01

    We report the techniques for measuring optical properties of a single nanometer-sized diamond. The electron beam (e-beam) lithography defined coordination markers on a silicon wafer provide us a convenient tool for allocating a single nanodiamond immobilized on the surface. By combining a confocal microscope with the e-beam lithography patterned smart substrate, we are able to measure the Raman and photoluminescence spectra from a single nanodiamond with a size less than 100 nm

  8. Characterizing SOI Wafers By Use Of AOTF-PHI

    Science.gov (United States)

    Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

    1995-01-01

    Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

  9. Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

    Science.gov (United States)

    Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

    2014-01-01

    Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

  10. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  11. Single Side Electrolytic In-Process Dressing (ELID) Grinding with Lapping Kinematics of Silicon Carbide

    Science.gov (United States)

    Khoshaim, Ahmed Bakr

    The demand for Silicon Carbide ceramics (SiC) has increased significantly in the last decade due to its reliable physical and chemical properties. The silicon carbide is widely used for aerospace segments in addition to many uses in the industry. Sometimes, a single side grinding is preferable than conventional grinding, for it has the ability to produce flat ceramics. However, the manufacturing cost is still high because of the high tool wear and long machining time. Part of the solution is to use electrolytic in process dressing (ELID) to reduce the processing time. The study on ELID single side grinding of ceramics has never been attempted before. The study involves four variables with three levels each. One of the variables, which is the eccentricity, is being investigated for the first time on ceramics. A full factorial design, for both the surface roughness and material removal rate, guides to calculate mathematical models that can predict future results. Three grinding wheel mesh sizes are used. An investigation of the influence of different grain size on the results can then be evaluated. The kinematics of the process was studied based on eccentricity in order to optimize the pattern of the diamond grains. The experiment is performed with the assist of the proposed specialized ELID fluid, TRIM C270E.

  12. Oxygen recoil implant from SiO2 layers into single-crystalline silicon

    International Nuclear Information System (INIS)

    Wang, G.; Chen, Y.; Li, D.; Oak, S.; Srivastav, G.; Banerjee, S.; Tasch, A.; Merrill, P.; Bleiler, R.

    2001-01-01

    It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF 2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. [copyright] 2001 American Institute of Physics

  13. Single molecule localization imaging of exosomes using blinking silicon quantum dots

    Science.gov (United States)

    Zong, Shenfei; Zong, Junzhu; Chen, Chen; Jiang, Xiaoyue; Zhang, Yizhi; Wang, Zhuyuan; Cui, Yiping

    2018-02-01

    Discovering new fluorophores, which are suitable for single molecule localization microscopy (SMLM) is important for promoting the applications of SMLM in biological or material sciences. Here, we found that silicon quantum dots (Si QDs) possess a fluorescence blinking behavior, making them an excellent candidate for SMLM. The Si QDs are fabricated using a facile microwave-assisted method. Blinking of Si QDs is confirmed by single particle fluorescence measurement and the spatial resolution achieved is about 30 nm. To explore the potential application of Si QDs as the nanoprobes for SMLM imaging, cell derived exosomes are chosen as the object owing to their small size (50-100 nm in diameter). Since CD63 is commonly presented on the membrane of exosomes, CD63 aptamers are attached to the surface of Si QDs to form nanoprobes which can specifically recognize exosomes. SMLM imaging shows that Si QDs based nanoprobes can indeed realize super resolved optical imaging of exosomes. More importantly, blinking of Si QDs is observed in water or PBS buffer with no need for special imaging buffers. Besides, considering that silicon is highly biocompatible, Si QDs should have minimal cytotoxicity. These features make Si QDs quite suitable for SMLM applications especially for live cell imaging.

  14. Investigation of a new low cost and low consumption single poly-silicon memory

    Directory of Open Access Journals (Sweden)

    Patrick Calenzo

    2010-10-01

    Full Text Available In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentificationapplications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases.

  15. Transverse wave propagation in [ab0] direction of silicon single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Sang Jin; Kim, Hye Jeong; Kwon, Se Ho; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan(Korea, Republic of)

    2015-12-15

    The speed and oscillation directions of elastic waves propagating in the [ab0] direction of a silicon single crystal were obtained by solving Christoffel's equation. It was found that the quasi waves propagate in the off-principal axis, and hence, the directions of the phase and group velocities are not the same. The maximum deviation of the two directions was 7.2 degree angle. Two modes of the pure transverse waves propagate in the [110] direction with different speeds, and hence, two peaks were observed in the pulse echo signal. The amplitude ratio of the two peaks was dependent on the initial oscillating direction of the incident wave. The pure and quasi-transverse waves propagate in the [210] direction, and the oscillation directions of these waves are perpendicular to each other. The skewing angle of the quasi wave was calculated as 7.14 degree angle, and it was measured as 9.76 degree angle. The amplitude decomposition in the [210] direction was similar to that in the [110] direction, since the oscillation directions of these waves are perpendicular to each other. These results offer useful information in measuring the crystal orientation of the silicon single crystal.

  16. Proposed method of assembly for the BCD silicon strip vertex detector modules

    International Nuclear Information System (INIS)

    Lindenmeyer, C.

    1989-01-01

    The BCD Silicon strip Vertex Detector is constructed of 10 identical central region modules and 18 similar forward region modules. This memo describes a method of assembling these modules from individual silicon wafers. Each wafer is fitted with associated front end electronics and cables and has been tested to insure that only good wafers reach the final assembly stage. 5 figs

  17. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  18. Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

    International Nuclear Information System (INIS)

    Bayn, I.; Mouradian, S.; Li, L.; Goldstein, J. A.; Schröder, T.; Zheng, J.; Chen, E. H.; Gaathon, O.; Englund, Dirk; Lu, M.; Stein, A.; Ruggiero, C. A.; Salzman, J.; Kalish, R.

    2014-01-01

    A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10 6 ) photonic crystal cavities with low mode volume (V m  = 1.062 × (λ/n) 3 ), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10 3

  19. Memory effect in silicon time-gated single-photon avalanche diodes

    International Nuclear Information System (INIS)

    Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-01-01

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

  20. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  1. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    International Nuclear Information System (INIS)

    Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi

    2015-01-01

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations

  2. Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

    Science.gov (United States)

    Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

    2015-06-01

    Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

  3. New method for evaluating effective recovery time and single photoelectron response in silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Grodzicka, Martyna, E-mail: m.grodzicka@ncbj.gov.pl; Szczęśniak, Tomasz; Moszyński, Marek; Szawłowski, Marek; Grodzicki, Krystian

    2015-05-21

    The linearity of a silicon photomultiplier (SiPM) response depends on the number of APD cells and its effective recovery time and it is related to the intensity and duration of the detected light pulses. The aim of this study was to determine the effective recovery time on the basis of the measured SiPM response to light pulses of different durations. A closer analysis of the SiPM response to the light pulses shorter than the effective recovery time of APD cells led to a method for the evaluation of the single photoelectron response of the devices where the single photoelectron peak cannot be clearly measured. This is necessary in the evaluation of the number of fired APD cells (or the number of photoelectrons) in measurements with light pulses of various durations. Measurements were done with SiPMs manufactured by two companies: Hamamatsu and SensL.

  4. Effects of laser fluence on silicon modification by four-beam laser interference

    International Nuclear Information System (INIS)

    Zhao, Le; Li, Dayou; Wang, Zuobin; Yue, Yong; Zhang, Jinjin; Yu, Miao; Li, Siwei

    2015-01-01

    This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm 2 , 495 mJ/cm 2 , and 637 mJ/cm 2 , the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications

  5. Silicon pore optics for future x-ray telescopes

    DEFF Research Database (Denmark)

    Wille, Eric; Bavdaz, Marcos; Wallace, Kotska

    2017-01-01

    arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor...... industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested...

  6. Investigating reliability attributes of silicon photovoltaic cells - An overview

    Science.gov (United States)

    Royal, E. L.

    1982-01-01

    Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

  7. Wafer plane inspection with soft resist thresholding

    Science.gov (United States)

    Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

    2008-10-01

    Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just

  8. Large-scale membrane transfer process: its application to single-crystal-silicon continuous membrane deformable mirror

    International Nuclear Information System (INIS)

    Wu, Tong; Sasaki, Takashi; Hane, Kazuhiro; Akiyama, Masayuki

    2013-01-01

    This paper describes a large-scale membrane transfer process developed for the construction of large-scale membrane devices via the transfer of continuous single-crystal-silicon membranes from one substrate to another. This technique is applied for fabricating a large stroke deformable mirror. A bimorph spring array is used to generate a large air gap between the mirror membrane and the electrode. A 1.9 mm × 1.9 mm × 2 µm single-crystal-silicon membrane is successfully transferred to the electrode substrate by Au–Si eutectic bonding and the subsequent all-dry release process. This process provides an effective approach for transferring a free-standing large continuous single-crystal-silicon to a flexible suspension spring array with a large air gap. (paper)

  9. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  10. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

    2017-01-01

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

  11. Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

    International Nuclear Information System (INIS)

    Li, Jia; Fang, Qihong; Zhang, Liangchi; Liu, Youwen

    2015-01-01

    Highlights: • Molecular dynamic model of nanoscale high speed grinding of silicon workpiece has been established. • The effect of grinding speed on subsurface damage and grinding surface integrity by analyzing the chip, dislocation movement, and phase transformation during high speed grinding process are thoroughly investigated. • Subsurface damage is studied by the evolution of surface area at first time for more obvious observation on transition from ductile to brittle. • The hydrostatic stress and von Mises stress by the established analytical model are studied subsurface damage mechanism during nanoscale grinding. - Abstract: Three-dimensional molecular dynamics (MD) simulations are performed to investigate the nanoscale grinding process of single crystal silicon using diamond tool. The effect of grinding speed on subsurface damage and grinding surface integrity by analyzing the chip, dislocation movement, and phase transformation are studied. We also establish an analytical model to calculate several important stress fields including hydrostatic stress and von Mises stress for studying subsurface damage mechanism, and obtain the dislocation density on the grinding subsurface. The results show that a higher grinding velocity in machining brittle material silicon causes a larger chip and a higher temperature, and reduces subsurface damage. However, when grinding velocity is above 180 m s −1 , subsurface damage thickness slightly increases because a higher grinding speed leads to the increase in grinding force and temperature, which accelerate dislocation nucleation and motion. Subsurface damage is studied by the evolution of surface area at first time for more obvious observation on transition from ductile to brittle, that provides valuable reference for machining nanometer devices. The von Mises stress and the hydrostatic stress play an important role in the grinding process, and explain the subsurface damage though dislocation mechanism under high

  12. Silicon microstrip detectors on 6'' technology

    CERN Document Server

    Bölla, G; Günther, M; Martignon, G; Bacchetta, N; Bisello, D; Leonardi, G L; Lucas, T; Wilburn, C

    1999-01-01

    The fabrication of microstrip detectors on 4'' high-resistivity wafers that allow for a maximum workable area of about 42 cm sup 2 has been well established. Using 6'' wafers the workable area increases up to 100 cm sup 2 (more than twice the area of a 4'' wafer) allowing a larger number of detectors to be processed at the same time on the same wafer resulting in a sizable reduction of cost. After a prototyping stage, the CDF silicon tracker upgrade is now receiving final production sensors from Micron Semiconductor Ltd. The performance of double-sided single-metal small stereo angle sensors for the CDF SVXII and ISL detectors has been studied. Results include probe station measurements and test beam results. The problems encountered from prototyping to the final devices are described. A brief overview of the response of the sensors to irradiation with gamma-rays and p sup + up to a dose of 0.5 Mrad (well above the doses expected during Run II of the Tevatron) is included. (author)

  13. Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD

    Science.gov (United States)

    Tiffenberg, Javier; Sofo-Haro, Miguel; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

    2017-09-01

    We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068 e- rms /pixel . This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while future astronomical applications may include direct imaging and spectroscopy of exoplanets.

  14. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Directory of Open Access Journals (Sweden)

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  15. Addressable Inverter Matrix Tests Integrated-Circuit Wafer

    Science.gov (United States)

    Buehler, Martin G.

    1988-01-01

    Addressing elements indirectly through shift register reduces number of test probes. With aid of new technique, complex test structure on silicon wafer tested with relatively small number of test probes. Conserves silicon area by reduction of area devoted to pads. Allows thorough evaluation of test structure characteristics and of manufacturing process parameters. Test structure consists of shift register and matrix of inverter/transmission-gate cells connected to two-by-ten array of probe pads. Entire pattern contained in square area having only 1.6-millimeter sides. Shift register is conventional static CMOS device using inverters and transmission gates in master/slave D flip-flop configuration.

  16. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

    Science.gov (United States)

    Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

    2010-06-01

    This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

  17. Lightweight and High-Resolution Single Crystal Silicon Optics for X-ray Astronomy

    Science.gov (United States)

    Zhang, William W.; Biskach, Michael P.; Chan, Kai-Wing; Mazzarella, James R.; McClelland, Ryan S.; Riveros, Raul E.; Saha, Timo T.; Solly, Peter M.

    2016-01-01

    We describe an approach to building mirror assemblies for next generation X-ray telescopes. It incorporates knowledge and lessons learned from building existing telescopes, including Chandra, XMM-Newton, Suzaku, and NuSTAR, as well as from our direct experience of the last 15 years developing mirror technology for the Constellation-X and International X-ray Observatory mission concepts. This approach combines single crystal silicon and precision polishing, thus has the potential of achieving the highest possible angular resolution with the least possible mass. Moreover, it is simple, consisting of several technical elements that can be developed independently in parallel. Lastly, it is highly amenable to mass production, therefore enabling the making of telescopes of very large photon collecting areas.

  18. Nanopore arrays in a silicon membrane for parallel single-molecule detection: fabrication

    Science.gov (United States)

    Schmidt, Torsten; Zhang, Miao; Sychugov, Ilya; Roxhed, Niclas; Linnros, Jan

    2015-08-01

    Solid state nanopores enable translocation and detection of single bio-molecules such as DNA in buffer solutions. Here, sub-10 nm nanopore arrays in silicon membranes were fabricated by using electron-beam lithography to define etch pits and by using a subsequent electrochemical etching step. This approach effectively decouples positioning of the pores and the control of their size, where the pore size essentially results from the anodizing current and time in the etching cell. Nanopores with diameters as small as 7 nm, fully penetrating 300 nm thick membranes, were obtained. The presented fabrication scheme to form large arrays of nanopores is attractive for parallel bio-molecule sensing and DNA sequencing using optical techniques. In particular the signal-to-noise ratio is improved compared to other alternatives such as nitride membranes suffering from a high-luminescence background.

  19. Stark tuning and electrical charge state control of single divacancies in silicon carbide

    Science.gov (United States)

    de las Casas, Charles F.; Christle, David J.; Ul Hassan, Jawad; Ohshima, Takeshi; Son, Nguyen T.; Awschalom, David D.

    2017-12-01

    Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make them promising for scalable quantum communication technologies compatible with existing fiber optic networks. However, local strain inhomogeneity can randomly perturb their optical transition frequencies, which degrades the indistinguishability of photons emitted from separate defects and hinders their coupling to optical cavities. Here, we show that electric fields can be used to tune the optical transition frequencies of single neutral divacancy defects in 4H-SiC over a range of several GHz via the DC Stark effect. The same technique can also control the charge state of the defect on microsecond timescales, which we use to stabilize unstable or non-neutral divacancies into their neutral charge state. Using fluorescence-based charge state detection, we show that both 975 nm and 1130 nm excitation can prepare their neutral charge state with near unity efficiency.

  20. Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface

    International Nuclear Information System (INIS)

    Ogawa, Masatoshi; Kamiya, Shoji; Izumi, Hayato; Tokuda, Yutaka

    2012-01-01

    This paper focuses on the effects of temperature and environment on the electronic properties of dislocations in n-type single crystal silicon near the surface. Deep level transient spectroscopy (DLTS) analyses were carried out with Schottky electrodes and p + -n junctions. The trap level, originally found at E C -0.50 eV (as commonly reported), shifted to a shallower level at E C -0.23 eV after a heat treatment at 350 K in an inert environment. The same heat treatment in lab air, however, did not cause any shift. The trap level shifted by the heat treatment in an inert environment was found to revert back to the original level when the specimens were exposed to lab air again. Therefore, the intrinsic trap level is expected to occur at E C -0.23 eV and shift sensitively with gas adsorption in air.

  1. Study of the signal formation in single-type column 3D silicon detectors

    International Nuclear Information System (INIS)

    Piemonte, Claudio; Boscardin, Maurizio; Bosisio, Luciano; Dalla Betta, Gian-Franco; Pozza, Alberto; Ronchin, Sabina; Zorzi, Nicola

    2007-01-01

    Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving more and more interest for application in the innermost layers of tracker systems for experiments running in very high luminosity colliders. Their short electrode distance allows for both a low depletion voltage and a high charge collection efficiency even at extremely high radiation fluences. In order to fully understand the properties of a 3D detector, a thorough characterization of the signal formation mechanism is of paramount importance. In this work the shape of the current induced by localized and uniform charge depositions in a single-type column 3D detector is studied. A first row estimation is given applying the Ramo theorem, then a more complete TCAD simulation is used to provide a more realistic pulse shape

  2. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  3. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  4. Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

    Science.gov (United States)

    Yoo, H. I.; Iles, P. A.; Tanner, D. P.

    1979-01-01

    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

  5. Modification of the properties of porous silicon on adsorption of iodine molecules

    International Nuclear Information System (INIS)

    Vorontsov, A. S.; Osminkina, L. A.; Tkachenko, A. E.; Konstantinova, E. A.; Elenskii, V. G.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2007-01-01

    Infrared spectroscopy and electron spin resonance measurements are used to study the properties of porous silicon layers on adsorption of the I 2 iodine molecules. The layers are formed on the p-an n-Si single-crystal wafers. It is established that, in the atmosphere of I 2 molecules, the charge-carrier concentration in the layers produced on the p-type wafers can be noticeably increased: the concentration of holes can attain values on the order of ∼10 18 -10 19 cm -3 . In porous silicon layers formed on the n-type wafers, the adsorption-induced inversion of the type of charge carriers and the partial substitution of silicon-hydrogen bonds by silicon-iodine bonds are observed. A decrease in the concentration of surface paramagnetic defects, P b centers, is observed in the samples with adsorbed iodine. The experimental data are interpreted in the context of the model in which it is assumed that both deep and shallow acceptor states are formed at the surface of silicon nanocrystals upon the adsorption of I 2 molecules

  6. 112 Gbit/s single-polarization silicon coherent receiver with hybrid-integrated BiCMOS linear TIA

    NARCIS (Netherlands)

    Verbist, J.; Zhang, J.; Moeneclaey, B.; van Weerdenburg, J.; van Uden, R.; Okonkwo, C.; Yin, X.; Bauwelinck, J.; Roelkens, G.

    2015-01-01

    We report the design, fabrication and verification of a single-polarization silicon coherent receiver with a low-power linear TIA array. Error-free operation assuming FEC is shown at bitrates of 112 Gbit/s (28 Gbaud 16-QAM) and 56 Gbit/s (28 Gbaud QPSK).

  7. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    DEFF Research Database (Denmark)

    Lloret, Juan; Sancho, Juan; Pu, Minhao

    2011-01-01

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploit...

  8. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  9. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  10. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Science.gov (United States)

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  11. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  12. Electron Spin Resonance Experiments on a Single Electron in Silicon Implanted with Phosphorous

    Science.gov (United States)

    Luhman, Dwight R.; Nguyen, K.; Tracy, L. A.; Carr, S.; Borchardt, J.; Bishop, N.; Ten Eyck, G.; Pluym, T.; Wendt, J.; Lilly, M. P.; Carroll, M. S.

    2015-03-01

    In this talk we will discuss the results of our ongoing experiments involving electron spin resonance (ESR) on a single electron in a natural silicon sample. The sample consists of an SET, defined by lithographic polysilicon gates, coupled to nearby phosphorous donors. The SET is used to detect charge transitions and readout the spin of the electron being investigated with ESR. The measurements were done with the sample at dilution refrigerator temperatures in the presence of a 1.3 T magnetic field. We will present data demonstrating Rabi oscillations of a single electron in this system as well as measurements of the coherence time, T2. We will also discuss our results using these and various other pulsing schemes in the context of a donor-SET system. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  13. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-05-04

    In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

  14. Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

    Science.gov (United States)

    Backe, H.; Lauth, W.; Tran Thi, T. N.

    2018-04-01

    Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV . This observation motivated us to initiate dechanneling length measurements as function of the beam energy since the occupation of quantum states in the channeling potential is expected to enhance the dechanneling length. High energy loss signals, generated as a result of emission of a bremsstrahlung photon with about half the beam energy at channeling of 450 and 855 MeV electrons, were measured as function of the crystal thickness. The analysis required additional assumptions which were extracted from the numerical solution of the Fokker-Planck equation. Preliminary results for diamond are presented. In addition, we reanalyzed dechanneling length measurements at silicon single crystals performed previously at the Mainz Microtron MAMI at beam energies between 195 and 855 MeV from which we conclude that the quality of our experimental data set is not sufficient to derive definite conclusions on the dechanneling length. Our experimental results are below the predictions of the Fokker-Planck equation and somewhat above the results of simulation calculations of A. V. Korol and A. V. Solov'yov et al. on the basis of the MBN Explorer simulation package. We somehow conservatively conclude that the prediction of the asymptotic dechanneling length on the basis of the Fokker-Planck equation represents an upper limit.

  15. Influence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation

    International Nuclear Information System (INIS)

    Gautier, G; Ventura, L; Jerisian, R

    2005-01-01

    Deep single trenches can be produced at the edge of apertures of protective films masking the surface of silicon samples. This macropore formation, from polarized HF based solutions, is electrically activated depending on the mask geometrical and physical parameters whatever the silicon type or the electrolyte composition. The mask thickness increase is known to induce deeper trenches. In this paper, we show that we can predict and localize this phenomenon by simulating two dimensional hole current distributions below the mask. We demonstrate also the influence of the material permittivity on trench depth. These 2D simulation results are correlated with experimental results

  16. Quality evaluation of resistivity-controlled silicon crystals

    Science.gov (United States)

    Wang, Jong Hoe

    2006-01-01

    The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

  17. CMOS-MEMS Test-Key for Extracting Wafer-Level Mechanical Properties

    Directory of Open Access Journals (Sweden)

    Pei-Zen Chang

    2012-12-01

    Full Text Available This paper develops the technologies of mechanical characterization of CMOS-MEMS devices, and presents a robust algorithm for extracting mechanical properties, such as Young’s modulus, and mean stress, through the external electrical circuit behavior of the micro test-key. An approximate analytical solution for the pull-in voltage of bridge-type test-key subjected to electrostatic load and initial stress is derived based on Euler’s beam model and the minimum energy method. Then one can use the aforesaid closed form solution of the pull-in voltage to extract the Young’s modulus and mean stress of the test structures. The test cases include the test-key fabricated by a TSMC 0.18 μm standard CMOS process, and the experimental results refer to Osterberg’s work on the pull-in voltage of single crystal silicone microbridges. The extracted material properties calculated by the present algorithm are valid. Besides, this paper also analyzes the robustness of this algorithm regarding the dimension effects of test-keys. This mechanical properties extracting method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test process is non-destructive.

  18. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  19. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  20. Probing and irradiation tests of ALICE pixel chip wafers and sensors

    CERN Document Server

    Cinausero, M; Antinori, F; Chochula, P; Dinapoli, R; Dima, R; Fabris, D; Galet, G; Lunardon, M; Manea, C; Marchini, S; Martini, S; Moretto, S; Pepato, Adriano; Prete, G; Riedler, P; Scarlassara, F; Segato, G F; Soramel, F; Stefanini, G; Turrisi, R; Vannucci, L; Viesti, G

    2004-01-01

    In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs).

  1. Wafer-Level Packaging Method for RF MEMS Applications Using Pre-Patterned BCB Polymer

    OpenAIRE

    Zhuhao Gong; Yulong Zhang; Xin Guo; Zewen Liu

    2018-01-01

    A radio-frequency micro-electro-mechanical system (RF MEMS) wafer-level packaging (WLP) method using pre-patterned benzo-cyclo-butene (BCB) polymers with a high-resistivity silicon cap is proposed to achieve high bonding quality and excellent RF performance. In this process, the BCB polymer was pre-defined to form the sealing ring and bonding layer by the spin-coating and patterning of photosensitive BCB before the cavity formation. During anisotropic wet etching of the silicon wafer to gener...

  2. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  3. Through-glass copper via using the glass reflow and seedless electroplating processes for wafer-level RF MEMS packaging

    International Nuclear Information System (INIS)

    Lee, Ju-Yong; Lee, Sung-Woo; Lee, Seung-Ki; Park, Jae-Hyoung

    2013-01-01

    We present a novel method for the fabrication of void-free copper-filled through-glass-vias (TGVs), and their application to the wafer-level radio frequency microelectromechanical systems (RF MEMS) packaging scheme. By using the glass reflow process with a patterned silicon mold, a vertical TGV with smooth sidewall and fine pitch could be achieved. Bottom-up void-free filling of the TGV is successfully demonstrated through the seedless copper electroplating process. In addition, the proposed process allows wafer-level packaging with glass cap encapsulation using the anodic bonding process, since the reflowed glass interposer is only formed in the device area surrounded with silicon substrate. A simple coplanar waveguide (CPW) line was employed as the packaged device to evaluate the electrical characteristics and thermo-mechanical reliability of the proposed packaging structure. The fabricated packaging structure showed a low insertion loss of 0.116 dB and a high return loss of 35.537 dB at 20 GHz, which were measured through the whole electrical path, including the CPW line, TGVs and contact pads. An insertion loss lower than 0.1 dB and a return loss higher than 30 dB could be achieved at frequencies of up to 15 GHz, and the resistance of the single copper via was measured to be 36 mΩ. Furthermore, the thermo-mechanical reliability of the proposed packaging structure was also verified through thermal shock and pressure cooker test. (paper)

  4. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  5. Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic (β) Silicon Carbide

    Energy Technology Data Exchange (ETDEWEB)

    Pharr, M.; Katoh, Y.; Bei, H.

    2006-01-01

    Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline β-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the <1 1 0> direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline β-SiC has a strong fracture toughness anisotropy.

  6. Two- and three-dimensional folding of thin film single-crystalline silicon for photovoltaic power applications.

    Science.gov (United States)

    Guo, Xiaoying; Li, Huan; Ahn, Bok Yeop; Duoss, Eric B; Hsia, K Jimmy; Lewis, Jennifer A; Nuzzo, Ralph G

    2009-12-01

    Fabrication of 3D electronic structures in the micrometer-to-millimeter range is extremely challenging due to the inherently 2D nature of most conventional wafer-based fabrication methods. Self-assembly, and the related method of self-folding of planar patterned membranes, provide a promising means to solve this problem. Here, we investigate self-assembly processes driven by wetting interactions to shape the contour of a functional, nonplanar photovoltaic (PV) device. A mechanics model based on the theory of thin plates is developed to identify the critical conditions for self-folding of different 2D geometrical shapes. This strategy is demonstrated for specifically designed millimeter-scale silicon objects, which are self-assembled into spherical, and other 3D shapes and integrated into fully functional light-trapping PV devices. The resulting 3D devices offer a promising way to efficiently harvest solar energy in thin cells using concentrator microarrays that function without active light tracking systems.

  7. Silicon-Film(TM) Solar Cells by a Flexible Manufacturing System: Final Report, 16 April 1998 -- 31 March 2001

    Energy Technology Data Exchange (ETDEWEB)

    Rand, J.

    2002-02-01

    This report describes the overall goal to engineer and develop flexible manufacturing methods and equipment to process Silicon-Film solar cells and modules. Three major thrusts of this three-year effort were to: develop a new larger-area (208 mm x 208 mm) Silicon-Film solar cell, the APx-8; construct and operate a new high-throughput wafer-making system; and develop a 15-MW single-thread manufacturing process. Specific technical accomplishments from this period are: Increase solar cell area by 80%, increase the generation capacity of a Silicon-Film wafer-making system by 350%, use a new in-line HF etch system in solar cell production, design and develop an in-line NaOH etch system, eliminate cassettes in solar cell processing, and design a new family of module products.

  8. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    International Nuclear Information System (INIS)

    Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

  9. Physical mechanisms of Cu-Cu wafer bonding

    International Nuclear Information System (INIS)

    Rebhan, B.

    2014-01-01

    Modern manufacturing processes of complex integrated semiconductor devices are based on wafer-level manufacturing of components which are subsequently interconnected. When compared with classical monolithic bi-dimensional integrated circuits (2D ICs), the new approach of three-dimensional integrated circuits (3D ICs) exhibits significant benefits in terms of signal propagation delay and power consumption due to the reduced metal interconnection length and allows high integration levels with reduced form factor. Metal thermo-compression bonding is a process suitable for 3D interconnects applications at wafer level, which facilitates the electrical and mechanical connection of two wafers even processed in different technologies, such as complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS). Due to its high electrical conductivity, copper is a very attractive material for electrical interconnects. For Cu-Cu wafer bonding the process requires typically bonding for around 1 h at 400°C and high contact pressure applied during bonding. Temperature reduction below such values is required in order to solve issues regarding (i) throughput in the wafer bonder, (ii) wafer-to-wafer misalignment after bonding and (iii) to minimise thermo-mechanical stresses or device degradation. The aim of this work was to study the physical mechanisms of Cu-Cu bonding and based on this study to further optimise the bonding process for low temperatures. The critical sample parameters (roughness, oxide, crystallinity) were identified using selected analytical techniques and correlated with the characteristics of the bonded Cu-Cu interfaces. Based on the results of this study the impact of several materials and process specifications on the bonding result were theoretically defined and experimentally proven. These fundamental findings subsequently facilitated low temperature (LT) metal thermo-compression Cu-Cu wafer bonding and even room temperature direct

  10. Fabrication of CVD graphene-based devices via laser ablation for wafer-scale characterization

    DEFF Research Database (Denmark)

    Mackenzie, David; Buron, Jonas Christian Due; Whelan, Patrick Rebsdorf

    2015-01-01

    Selective laser ablation of a wafer-scale graphene film is shown to provide flexible, high speed (1 wafer/hour) device fabrication while avoiding the degradation of electrical properties associated with traditional lithographic methods. Picosecond laser pulses with single pulse peak fluences of 140......-effect mobility, doping level, on–off ratio, and conductance minimum before and after laser ablation fabrication....

  11. Bondability of processed glass wafers

    NARCIS (Netherlands)

    Pandraud, G.; Gui, C.; Lambeck, Paul; Pigeon, F.; Parriaux, O.; Gorecki, Christophe

    1999-01-01

    The mechanism of direct bonding at room temperature has been attributed to the short range inter-molecular and inter-atomic attraction forces, such as Van der Waals forces. Consequently, the wafer surface smoothness becomes one of the most critical parameters in this process. High surface roughness

  12. Helium interaction with vacancy-type defects created in silicon carbide single crystal

    Science.gov (United States)

    Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

    2013-05-01

    Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

  13. Helium interaction with vacancy-type defects created in silicon carbide single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Linez, F., E-mail: florence.linez@aalto.fi [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France); Gilabert, E. [CENBG, U.R.A. 451 CNRS, Université de Bordeaux I, BP120, Le Haut Vigneau, 33175 Gradignan Cedex (France); Debelle, A. [CSNSM, Univ. Paris-Sud, CNRS-IN2P3, 91405 Orsay Campus (France); Desgardin, P.; Barthe, M.-F. [CEMHTI CNRS, 3A rue de la Férollerie, 45071 Orléans (France)

    2013-05-15

    Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H–SiC single crystals have been implanted with 50 keV-He ions at 2 × 10{sup 14} and 10{sup 15} cm{sup −2} and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

  14. Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

    KAUST Repository

    Del Gobbo, Silvano; Castrucci, P.; Fedele, S.; Riele, L.; Convertino, A.; Morbidoni, M.; De Nicola, F.; Scarselli, M.; Camilli, L.; De Crescenzi, M.

    2013-01-01

    Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

  15. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  16. Single-crystal-silicon-based microinstrument to study friction and wear at MEMS sidewall interfaces

    International Nuclear Information System (INIS)

    Ansari, N; Ashurst, W R

    2012-01-01

    Since the advent of microelectromechanical systems (MEMS) technology, friction and wear are considered as key factors that determine the lifetime and reliability of MEMS devices that contain contacting interfaces. However, to date, our knowledge of the mechanisms that govern friction and wear in MEMS is insufficient. Therefore, systematically investigating friction and wear at MEMS scale is critical for the commercial success of many potential MEMS devices. Specifically, since many emerging MEMS devices contain more sidewall interfaces, which are topographically and chemically different from in-plane interfaces, studying the friction and wear characteristics of MEMS sidewall surfaces is important. The microinstruments that have been used to date to investigate the friction and wear characteristics of MEMS sidewall surfaces possess several limitations induced either by their design or the structural film used to fabricate them. Therefore, in this paper, we report on a single-crystal-silicon-based microinstrument to study the frictional and wear behavior of MEMS sidewalls, which not only addresses some of the limitations of other microinstruments but is also easy to fabricate. The design, modeling and fabrication of the microinstrument are described in this paper. Additionally, the coefficients of static and dynamic friction of octadecyltrichlorosilane-coated sidewall surfaces as well as sidewall surfaces with only native oxide on them are also reported in this paper. (paper)

  17. Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure.

    Science.gov (United States)

    Zhang, Chunyang; Chen, Lingzhi; Zhu, Yingjie; Guan, Zisheng

    2018-04-03

    This paper reports inverted pyramid microstructure-based single-crystalline silicon (sc-Si) solar cell with a conversion efficiency up to 20.19% in standard size of 156.75 × 156.75 mm 2 . The inverted pyramid microstructures were fabricated jointly by metal-assisted chemical etching process (MACE) with ultra-low concentration of silver ions and optimized alkaline anisotropic texturing process. And the inverted pyramid sizes were controlled by changing the parameters in both MACE and alkaline anisotropic texturing. Regarding passivation efficiency, the textured sc-Si with normal reflectivity of 9.2% and inverted pyramid size of 1 μm was used to fabricate solar cells. The best batch of solar cells showed a 0.19% higher of conversion efficiency and a 0.22 mA cm -2 improvement in short-circuit current density, and the excellent photoelectric property surpasses that of the same structure solar cell reported before. This technology shows great potential to be an alternative for large-scale production of high efficient sc-Si solar cells in the future.

  18. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  19. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  20. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    Science.gov (United States)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  1. Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

    Science.gov (United States)

    Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

    1993-07-01

    A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14-18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.

  2. Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion

    Science.gov (United States)

    Rong, Youying; Ma, Jianhui; Chen, Lingxiao; Liu, Yan; Siyushev, Petr; Wu, Botao; Pan, Haifeng; Jelezko, Fedor; Wu, E.; Zeng, Heping

    2018-05-01

    We report a method with high time resolution to measure the excited-state lifetime of silicon vacancy centers in bulk diamond avoiding timing jitter from the single-photon detectors. Frequency upconversion of the fluorescence emitted from silicon vacancy centers was achieved from 738 nm to 436 nm via sum frequency generation with a short pump pulse. The excited-state lifetime can be obtained by measuring the intensity of upconverted light while the pump delay changes. As a probe, a pump laser with pulse duration of 11 ps provided a high temporal resolution of the measurement. The lifetime extracted from the pump–probe curve was 0.755 ns, which was comparable to the timing jitter of the single-photon detectors.

  3. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  4. Trace analysis for 300 MM wafers and processes with TXRF

    International Nuclear Information System (INIS)

    Nutsch, A.; Erdmann, V.; Zielonka, G.; Pfitzner, L.; Ryssel, H.

    2000-01-01

    Efficient fabrication of semiconductor devices is combined with an increasing size of silicon wafers. The contamination level of processes, media, and equipment has to decrease continuously. A new test laboratory for 300 mm was installed in view of the above mentioned aspects. Aside of numerous processing tools this platform consist electrical test methods, particle detection, vapor phase decomposition (VPD) preparation, and TXRF. The equipment is installed in a cleanroom. It is common to perform process or equipment control, development, evaluation and qualification with monitor wafers. The evaluation and the qualification of 300 mm equipment require direct TXRF on 300 mm wafers. A new TXRF setup was installed due to the wafer size of 300 mm. The 300 mm TXRF is equipped with tungsten and molybdenum anode. This combination allows a sensitive detection of elements with fluorescence energy below 10 keV for tungsten excitation. The molybdenum excitation enables the detection of a wide variety of elements. The detection sensitivity for the tungsten anode excited samples is ten times higher than for molybdenum anode measured samples. The system is calibrated with 1 ng Ni. This calibration shows a stability within 5 % when monitored to control system stability. Decreasing the amount of Ni linear results in a linear decrease of the measured Ni signal. This result is verified for a range of elements by multielement samples. New designs demand new processes and materials, e.g. ferroelectric layers and copper. The trace analysis of many of these materials is supported by the higher excitation energy of the molybdenum anode. Reclaim and recycling of 300 mm wafers demand for an accurate contamination control of the processes to avoid cross contamination. Polishing or etching result in modified surfaces. TXRF as a non-destructive test method allows the simultaneously detection of a variety of elements on differing surfaces in view of contamination control and process

  5. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  6. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  7. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  8. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  9. Temperature Dependent Electrical Properties of PZT Wafer

    Science.gov (United States)

    Basu, T.; Sen, S.; Seal, A.; Sen, A.

    2016-04-01

    The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

  10. Analysis about diamond tool wear in nano-metric cutting of single crystal silicon using molecular dynamics method

    Science.gov (United States)

    Wang, Zhiguo; Liang, Yingchun; Chen, Mingjun; Tong, Zhen; Chen, Jiaxuan

    2010-10-01

    Tool wear not only changes its geometry accuracy and integrity, but also decrease machining precision and surface integrity of workpiece that affect using performance and service life of workpiece in ultra-precision machining. Scholars made a lot of experimental researches and stimulant analyses, but there is a great difference on the wear mechanism, especially on the nano-scale wear mechanism. In this paper, the three-dimensional simulation model is built to simulate nano-metric cutting of a single crystal silicon with a non-rigid right-angle diamond tool with 0 rake angle and 0 clearance angle by the molecular dynamics (MD) simulation approach, which is used to investigate the diamond tool wear during the nano-metric cutting process. A Tersoff potential is employed for the interaction between carbon-carbon atoms, silicon-silicon atoms and carbon-silicon atoms. The tool gets the high alternating shear stress, the tool wear firstly presents at the cutting edge where intension is low. At the corner the tool is splitted along the {1 1 1} crystal plane, which forms the tipping. The wear at the flank face is the structure transformation of diamond that the diamond structure transforms into the sheet graphite structure. Owing to the tool wear the cutting force increases.

  11. Electrodeposition of cadmium on n-type silicon single crystals of ...

    African Journals Online (AJOL)

    sea

    type silicon have been studied as a function of different potential steps. Within appropriate potential ... including progressive nucleation on active sites and diffusion controlled cluster growth. ..... al CdSe nanocrystals on {111} gold. Surf. Sci.

  12. Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

    Science.gov (United States)

    Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

    2018-03-01

    It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up

  13. Remarkable effects of disorder on superconductivity of single atomic layers of lead on silicon

    Science.gov (United States)

    Brun, Christophe

    2015-03-01

    It is well known that conventional superconductivity is very robust against non-magnetic disorder. Nevertheless for thin and ultrathin films the structural properties play a major role in determining the superconducting properties, through a subtle interplay between disorder and Coulomb interactions. Unexpectedly, in 2010 superconductivity was discovered in single atomic layers of lead and indium grown on silicon substrate using scanning tunneling spectroscopy and confirmed later on by macroscopic transport measurements. Such well-controlled and tunable crystalline monolayers are ideal systems for studying the influence of various kinds of structural defects on the superconducting properties at the atomic and mesoscopic scale. In particular, Pb monolayers offer the opportunity of probing new effects of disorder because not only superconductivity is 2D but also the electronic wave functions are 2D. Our study of two Pb monolayers of different crystal structures by very-low temperature STM (300 mK) under magnetic field reveals unexpected results involving new spatial spectroscopic variations. Our results show that although the sheet resistance of the Pb monolayers is much below the resistance quantum, strong non-BCS corrections appear leading to peak heights fluctuations in the dI/dV tunneling spectra at a spatial scale much smaller than the superconducting coherence length. Furthermore, strong local evidence of the signature of Rashba effect on the superconductivity of the Pb/Si(111) monolayer is revealed through filling of in gap states and local spatial variations of this filling. Finally the nature of vortices in a monolayer is found to be very sensitive to the properties of step edges areas. This work was supported by University Pierre et Marie Curie UPMC `Emergence' project, French ANR Project `ElectroVortex,' ANR-QuDec and Templeton Foundation (40381), ARO (W911NF-13-1-0431) and CNRS PICS funds. Partial funding by US-DOE Grant DE-AC02-07CH1.

  14. Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Diamare, D., E-mail: d.diamare@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Wojdak, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Lettieri, S. [Institute for Superconductors and Innovative Materials, National Council of Research (CNR-SPIN), Via Cintia 80126, Naples (Italy); Department of Physical Sciences, University of Naples “Federico II”, Via Cintia 80126, Naples (Italy); Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom)

    2013-04-15

    We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at temperatures between 700 °C and 1150 °C. While the near infrared emission of Si NCs has long been studied, visible light emission has only recently attracted interest due to its very short decay times and its recently-reported redshift with decreasing NCs size. We analyse the PL decay dynamics in the range 450–700 nm with picosecond time resolution using Time Correlated Single Photon Counting. In the resultant multi-exponential decays two dominant components can clearly be distinguished: a very short component, in the range of hundreds of picoseconds, and a nanosecond component. In this wavelength range we do not detect the microsecond component generally associated with excitonic recombination. We associate the nanosecond component to defect relaxation: it decreases in intensity in the sample annealed at higher temperature, suggesting that the contribution from defects decreases with increasing temperature. The origin of the very fast PL component (ps time region) is also discussed. We show that it is consistent with the Auger recombination times of multiple excitons. Further work needs to be done in order to assess the contribution of the Auger-controlled recombinations to the defect-assisted mechanism of photoluminescence. -- Highlights: ► We report time-resolved PL measurements of Si-Ncs embedded in SiO{sub 2} matrix. ► Net decrease of PL with increasing the annealing temperature has been observed. ► Lifetime distribution analysis revealed a multiexponential decay with ns and ps components. ► Ps components are consistent with the lifetime range of the Auger recombination times. ► No evidence for a fast direct transition at the Brillouin zone centre.

  15. Multimodality Imaging-based Evaluation of Single-Lumen Silicone Breast Implants for Rupture.

    Science.gov (United States)

    Seiler, Stephen J; Sharma, Pooja B; Hayes, Jody C; Ganti, Ramapriya; Mootz, Ann R; Eads, Emily D; Teotia, Sumeet S; Evans, W Phil

    2017-01-01

    Breast implants are frequently encountered on breast imaging studies, and it is essential for any radiologist interpreting these studies to be able to correctly assess implant integrity. Ruptures of silicone gel-filled implants often occur without becoming clinically obvious and are incidentally detected at imaging. Early diagnosis of implant rupture is important because surgical removal of extracapsular silicone in the breast parenchyma and lymphatics is difficult. Conversely, misdiagnosis of rupture may prompt a patient to undergo unnecessary additional surgery to remove the implant. Mammography is the most common breast imaging examination performed and can readily depict extracapsular free silicone, although it is insensitive for detection of intracapsular implant rupture. Ultrasonography (US) can be used to assess the internal structure of the implant and may provide an economical method for initial implant assessment. Common US signs of intracapsular rupture include the "keyhole" or "noose" sign, subcapsular line sign, and "stepladder" sign; extracapsular silicone has a distinctive "snowstorm" or echogenic noise appearance. Magnetic resonance (MR) imaging is the most accurate and reliable means for assessment of implant rupture and is highly sensitive for detection of both intracapsular and extracapsular rupture. MR imaging findings of intracapsular rupture include the keyhole or noose sign, subcapsular line sign, and "linguine" sign, and silicone-selective MR imaging sequences are highly sensitive to small amounts of extracapsular silicone. © RSNA, 2017.

  16. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  17. Friction and Wear of Metals With a Single-Crystal Abrasive Grit of Silicon Carbide - Effect of Shear Strength of Metal

    National Research Council Canada - National Science Library

    Miyoshi, Kazuhisa

    1978-01-01

    An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...

  18. Low temperature sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1994-01-01

    A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique

  19. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  20. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  1. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  2. Single Stage Silicone Border Molded Closed Mouth Impression Technique-Part II.

    Science.gov (United States)

    Solomon, E G R

    2011-09-01

    Functioning of a complete denture depends to a great extent on the impression technique. Several impression techniques have been described in the literature since the turn of this century when Greene [Clinical courses in dental prothesis, 1916] brothers introduced the first scientific system of recording dental impression. Advocates of each technique have their own claim of superiority over the other. The introduction of elastomeric impression materials [Skinner and Cooper, J Am Dent Assoc 51:523-536, 1955] has made possible new techniques of recording impression for complete denture construction. These rubber like materials are of two types; one has a polysulfide base and is popularily known as polysulfide rubber (Thiokol and Mercaptan). The other variety has a silicone base known as silicone rubber or silicone elastomer. Silicone elastomers are available in four different consistencies; a thin easy flowing light bodied material,a creamy medium bodied material, a highly viscous heavy bodied material and a kneadable putty material. This paper describes an active closed mouth impression technique with one stage border molding using putty silicone material as a substitute for low fusing compound.

  3. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    International Nuclear Information System (INIS)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V; Gracia-Jimenez, J M

    2009-01-01

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R m ). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm -2 .

  4. Design, fabrication and characterization of a two-step released silicon dioxide piezoresistive microcantilever immunosensor

    International Nuclear Information System (INIS)

    Zhou, Youzheng; Wang, Zheyao; Wang, Chaonan; Ruan, Wenzhou; Liu, Litian

    2009-01-01

    This paper presents the design, fabrication and characterization of a silicon dioxide piezoresistive microcantilever immunosensor fabricated on silicon-on-insulator (SOI) wafers. The microcantilever consists of two strips of single crystalline silicon piezoresistors sandwiched in between two silicon dioxide layers. A theoretical model for the laminated microcantilever with a discontinuous layer is deduced using classic laminated beam theory. A two-step release method combining anisotropic and isotropic etching is developed to suspend the microcantilever, and the fabrication results show an excellent yield. The residual stress-induced free bending of the microcantilever and the stress caused by self-heating of the piezoresistors are discussed. The microcantilever sensor is characterized as an immunosensor using specific binding of antigen and antibody. These methods and some conclusions are also applicable to the development of other piezoresistive sensors that use laminated structures

  5. Morphology of IR and UV Laser-induced Structural Changes on Silicon Surfaces

    International Nuclear Information System (INIS)

    Jimenez-Jarquin, J.; Haro-Poniatowski, E.; Fernandez-Guasti, M.; Hernandez-Pozos, J.L.

    2005-01-01

    Using scanning electronic microscopy, we analyze the structural changes induced in silicon (100) wafers by focused IR (1064 nm) and UV (355 nm) nanosecond laser pulses. The experiments were performed in the laser ablation regime. When a silicon surface is irradiated by laser pulses in an O2 atmosphere conical microstructures are obtained. The changes in silicon surface morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however the final result consist of an array of microcones when the experiment is carried out in oxygen. We employ a random scanning technique to irradiate silicon surfaces over large areas. In this form we have obtained large patterned areas

  6. Novel method of separating macroporous arrays from p-type silicon substrate

    International Nuclear Information System (INIS)

    Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

    2012-01-01

    This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

  7. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Directory of Open Access Journals (Sweden)

    Kae Dal Kwack

    2011-01-01

    Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  8. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  9. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

  10. Laser plasma generation of hydrogen-free diamond-like carbon thin films on Zr-2.5Nb CANDU pressure tube materials and silicon wafers with a pulsed high-power CO2 laser

    International Nuclear Information System (INIS)

    Ebrahim, N.A.; Mouris, J.F.; Hoffmann, C.R.J.; Davis, R.W.

    1995-06-01

    We report the first experiments on the laser plasma deposition of hydrogen-free, diamond-like carbon (DLC) films on Zr-2.5Nb CANDU pressure-tube materials and silicon substrates, using the short-pulse, high-power, CO 2 laser in the High-Power Laser Laboratory at Chalk River Laboratories. The films were (AFM). The thin films show the characteristic signature of DLC films in the Raman spectra obtained using a krypton-ion (Kr + ) laser. The Vickers ultra-low-load microhardness tests show hardness of the coated surface of approximately 7000 Kg force mm -2 , which is consistent with the hardness associated with DLC films. AFM examination of the film morphology shows diamond-like crystals distributed throughout the film, with film thicknesses of up to 0.5 μm generated with 50 laser pulses. With significantly more laser pulses, it is expected that very uniform diamond-like films would be produced. These experiments suggest that it should be possible to deposit hydrogen-free, diamond-like films of relevance to nuclear reactor components with a high-power and high-repetition-rate laser facility. (author). 7 refs., 2 tabs., 15 figs

  11. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  12. MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

    International Nuclear Information System (INIS)

    Kamwanna, T.; Pasaja, N.; Yu, L.D.; Vilaithong, T.; Anders, A.; Singkarat, S.

    2008-01-01

    Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He 2+ ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film.

  13. Single-particle properties of N = 12 to N = 20 silicon isotopes within the dispersive optical model

    Science.gov (United States)

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Spasskaya, T. I.

    2017-09-01

    Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope 28Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1 d and 2 s 1/2 neutron states in the isotopes 26,28,30,32,34Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes 30,32,34Si and the N = 20 neutron shell.

  14. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  15. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  16. MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

    Science.gov (United States)

    Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

    2013-12-03

    In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

  17. High Speed On-Wafer Characterization Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At the High Speed On-Wafer Characterization Laboratory, researchers characterize and model devices operating at terahertz (THz) and millimeter-wave frequencies. The...

  18. FISH & CHIPS: Single Chip Silicon MEMS CTDL Salinity, Temperature, Pressure and Light sensor for use in fisheries research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Hansen, Ole; Thomsen, Erik Vilain

    2005-01-01

    A single-chip silicon MEMS CTDL multi sensor for use in aqueous environments is presented. The new sensor chip consists of a conductivity sensor based on platinum electrodes (C), an ion-implanted thermistor temperature sensor (T), a piezoresistive pressure sensor (D for depth/pressure) and an ion......-implanted p-n junction light sensor (L). The design and fabrication process is described. A temperature sensitivity of 0.8 × 10-3K-1 has been measured and detailed analysis of conductivity measurement data shows a cell constant of 81 cm-1....

  19. Self-supporting film method of silicon single crystal by ion implantation and it`s application

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Kazuo; Nakao, Setsuo; Niwa, Hiroaki; Miyagawa, Soji [National Industrial Research Inst. of Nagoya (Japan)

    1996-12-01

    A few {mu}m of thickness of self-supporting film of silicon single crystal was produced by the ion implantation and the selective etching. This materials are distinguished by a uniform film thickness, good controllability, crystallization and the mechanical strength. For applying it to device, the detailed process has to be established, because there are some improved problems such as pinhole and morphology on the surface. This materials are very useful to the basic experiment of the base for epitaxial growth under irradiation of ion beams and the ion beam analysis in the atmosphere. (S.Y.)

  20. A new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.; Park, C.; Yang, S.; Morris, S.; Do, V.; Tasch, F.

    1992-01-01

    We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This paper reports that this new model is based on the dual Pearson semi-empirical implant depth profile model and the UT-MARLOWE Monte Carlo boron ion implantation model. This new model can predict with very high computational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness

  1. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-on-insulator microring resonator.

    Science.gov (United States)

    Lloret, Juan; Sancho, Juan; Pu, Minhao; Gasulla, Ivana; Yvind, Kresten; Sales, Salvador; Capmany, José

    2011-06-20

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window based scenarios are evaluated for improving the filter performance in terms of the side-lobe level.

  2. Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

    CERN Document Server

    Adriani, O

    1997-01-01

    We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

  3. Science and technology of plasma activated direct wafer bonding

    Science.gov (United States)

    Roberds, Brian Edward

    This dissertation studied the kinetics of silicon direct wafer bonding with emphasis on low temperature bonding mechanisms. The project goals were to understand the topological requirements for initial bonding, develop a tensile test to measure the bond strength as a function of time and temperature and, using the kinetic information obtained, develop lower temperature methods of bonding. A reproducible surface metrology metric for bonding was best described by power spectral density derived from atomic force microscopy measurements. From the tensile strength kinetics study it was found that low annealing temperatures could be used to obtain strong bonds, but at the expense of longer annealing times. Three models were developed to describe the kinetics. A diffusion controlled model and a reaction rate controlled model were developed for the higher temperature regimes (T > 600sp°C), and an electric field assisted oxidation model was proposed for the low temperature range. An in situ oxygen plasma treatment was used to further enhance the field-controlled mechanism which resulted in dramatic increases in the low temperature bonding kinetics. Multiple internal transmission Fourier transform infrared spectroscopy (MIT-FTIR) was used to monitor species evolution at the bonded interface and a capacitance-voltage (CV) study was undertaken to investigate charge distribution and surface states resulting from plasma activation. A short, less than a minute, plasma exposure prior to contacting the wafers was found to obtain very strong bonds for hydrophobic silicon wafers at very low temperatures (100sp°C). This novel bonding method may enable new technologies involving heterogeneous material systems or bonding partially fabricated devices to become realities.

  4. Multiproject wafers: not just for million-dollar mask sets

    Science.gov (United States)

    Morse, Richard D.

    2003-06-01

    With the advent of Reticle Enhancement Technologies (RET) such as Optical Proximity Correction (OPC) and Phase Shift Masks (PSM) required to manufacture semiconductors in the sub-wavelength era, the cost of photomask tooling has skyrocketed. On the leading edge of technology, mask set prices often exceed $1 million. This shifts an enormous burden back to designers and Electronic Design Automation (EDA) software vendors to create perfect designs at a time when the number of transistors per chip is measured in the hundreds of millions, and gigachips are on the drawing boards. Moore's Law has driven technology to incredible feats. The prime beneficiaries of the technology - memory and microprocessor (MPU) manufacturers - can continue to fit the model because wafer volumes (and chip prices in the MPU case) render tooling costs relatively insignificant. However, Application-Specific IC (ASIC) manufacturers and most foundry clients average very small wafer per reticle ratios causing a dramatic and potentially insupportable rise in the cost of manufacturing. Multi-Project wafers (MPWs) are a way to share the cost of tooling and silicon by putting more than one chip on each reticle. Lacking any unexpected breakthroughs in simulation, verification, or mask technology to reduce the cost of prototyping, more efficient use of reticle space becomes a viable and increasingly attractive choice. It is worthwhile therefore, to discuss the economics of prototyping in the sub-wavelength era and the increasing advantages of the MPW, shared-silicon approach. However, putting together a collection of different-sized chips during tapeout can be challenging and time consuming. Design compatibility, reticle field optimization, and frame generation have traditionally been the biggest worries but, with the advent of dummy-fill for planarization and RET for resolution, another layer of complexity has been added. MPW automation software is quite advanced today, but the size of the task

  5. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  6. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca; Diab, Amer El Hajj; Ionica, Irina; Ghibaudo, Gerard; Faraone, Lorenzo; Cristoloveanu, Sorin

    2015-01-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  7. Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

    KAUST Repository

    Pirro, Luca

    2015-09-01

    Recent experimental results have demonstrated the possibility of characterizing silicon-on-insulator (SOI) wafers through split C-V measurements in the pseudo-MOSFET configuration. This paper analyzes the capacitance and conductance versus frequency characteristics. We discuss the conditions under which it is possible to extract interface trap density in bare SOI wafers. The results indicate, through both measurements and simulations, that the signature due to interface trap density is present in small-area samples, but is masked by the RC response of the channel in regular, large-area ones, making the extraction in standard samples problematic. © 1963-2012 IEEE.

  8. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  9. High-Fidelity Microwave Control of Single-Atom Spin Qubits in Silicon

    Science.gov (United States)

    2014-07-08

    reality. Every electronic device found in our homes, offices, cars, pockets contains a brain made up of silicon transistors. Naturally, the trillion-dollar...to 6 GHz) and digital IQ modulation. AlazarTech ATS9440 This digitiser samples signals and stores them in memory for analysis, and has a graphical...nanostructures. Spin resonance experiments on donors in enriched 28Si have raised the suspicion that the proximity to a Si/SiO2 interface deteriorates

  10. One - step nanosecond laser microstructuring, sulfur hyperdoping, and annealing of silicon surfaces in liquid carbondisulfide

    Science.gov (United States)

    Van Luong, Nguyen; Danilov, P. A.; Ionin, A. A.; Khmel'nitskii, P. A.; Kudryashov, S. I.; Mel'nik, N. N.; Saraeva, I. N.; Смirnov, H. A.; Rudenko, A. A.; Zayarny, D. A.

    2017-09-01

    We perform a single-shot IR nanosecond laser processing of commercial silicon wafers in ambient air and under a 2 mm thick carbon disulfide liquid layer. We characterize the surface spots modified in the liquid ambient and the spots ablated under the same conditions in air in terms of its surface topography, chemical composition, band-structure modification, and crystalline structure by means of SEM and EDX microscopy, as well as of FT-IR and Raman spectroscopy. These studies indicate that single-step microstructuring and deep (up to 2-3% on the surface) hyperdoping of the crystalline silicon in its submicron surface layer, preserving via pulsed laser annealing its crystallinity and providing high (103 - 104 cm-1) spectrally at near- and mid-IR absorption coefficients, can be obtained in this novel approach, which is very promising for thin - film silicon photovoltaic devices

  11. Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

    Science.gov (United States)

    Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

    2017-09-01

    The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

  12. Monte Carlo simulation of boron-ion implantation into single-crystal silicon

    International Nuclear Information System (INIS)

    Klein, K.M.

    1991-01-01

    A physically based Monte Carlo boron implantation model developed comprehends previously neglected but important implant parameters such as native oxide layers, wafer temperature, beam divergence, tilt angle, rotation (twist) angle, and dose, in addition to energy. This model uses as its foundation the MARLOWE Monte Carlo simulation code developed at Oak Ridge National Laboratory for the analysis of radiation effects in materials. This code was carefully adapted for the simulation of ion implantation, and a number of significant improvements have been made, including the addition of atomic pair specific interatomic potentials, the implementation of a newly developed local electron concentration dependent electronic stopping model, and the implementation of a newly developed cumulative damage model. This improved version of the code, known as UT-MARLOWE, allows boron implantation profiles to be accurately predicted as a function of energy, tilt angle, rotation angle, and dose. This code has also been used in the development and implementation of an accurate and efficient two-dimensional boron implantation model

  13. Methane production using resin-wafer electrodeionization

    Science.gov (United States)

    Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

    2014-03-25

    The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

  14. Microstructure and Mechanical Aspects of Multicrystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Popovich, V.A.

    2013-01-01

    Due to pressure from the photovoltaic industry to decrease the cost of solar cell production, there is a tendency to reduce the thickness of silicon wafers. Unfortunately, wafers contain defects created by the various processing steps involved in solar cell production, which significantly reduce the

  15. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  16. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  17. Comparison of laser chemical processing and lasermicrojet for structuring and cutting silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hopman, Sybille; Fell, Andreas; Mayer, Kuno; Mesec, Matthias; Rodofili, Andreas; Kray, Daniel [Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)

    2009-06-15

    This paper deals with the development of a new cutting method for thin silicon solar wafers with liquid-jet-guided lasers (lasermicrojet {sup registered}, LMJ, and laser chemical processing, LCP). Several laser systems with different wavelengths were tested to find the optimum laser system and processing parameters in terms of efficient material removal and deep laser cutting. Water and potassium hydroxide were used as carrier liquids to enhance laser ablation. The ablation efficiency was defined as a target parameter and experimentally determined by performing single laser grooves. It is demonstrated that the ablation process of LMJ is mainly affected by silicon melting and then removing by the liquid-jet momentum for single laser grooves. Best result for deep laser grooves is achieved if evaporation dominates the ablation process. Better surface quality referred to laser-induced crystalline damage is presented for a cut wafer with LMJ in comparison to a standard multiwire slurry saw. This shows a great potential of wafering with liquid-jet-guided lasers although no optimal liquid media was used. (orig.)

  18. Morphological and optical properties of n-type porous silicon

    Indian Academy of Sciences (India)

    type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ( J ). Porosity and PS layer thickness, obtained by the gravimetric method, ...

  19. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    CERN Document Server

    Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

  20. Efficacy of the Power Balance Silicone Wristband: a single-blind, randomized, triple placebo-controlled study.

    Science.gov (United States)

    Pothier, David D; Thiel, Gundula; Khoo, S G; Dillon, Wanda A; Sulway, Shaleen; Rutka, John A

    2012-06-01

    The Power Balance Silicone Wristband (Power Balance LLC, Laguna Niguel, CA) (power balance band; PBB) consists of a silicone wristband, incorporating two holograms, which is meant to confer improvements in balance on the wearer. Despite its popularity, the PBB has become somewhat controversial, with a number of articles being published in the news media regarding its efficacy. The PBB has not been formally evaluated but remains popular, largely based on anecdotal evidence. This study subjectively and objectively measured the effects of the PBB on balance in normal participants. A prospective, single-blind, randomized, triple placebo-controlled crossover study was undertaken. Twenty participants underwent measurement using the modified Test of Sensory Interaction on Balance (mCTSIB) and gave subjective feedback (visual analogue scale [VAS]) for each of four band conditions: no band, a silicone band, a deactivated PBB, and the PBB. Participants acted as their own controls. The mean of the four mCTSIB conditions (eyes open and closed on both firm and compliant surfaces) was calculated. This mean value and condition 4 of the mCTSIB were compared between band conditions using path length (PL) and root mean square (RMS) as outcome measures. No significant differences were found between band conditions for PL (p  =  .91 and p  =  .94, respectively) and RMS (p  =  .85 and p  =  .96, respectively). VASs also showed no difference between bands (p  =  .25). The PBB appears to have no effect on mCTSIB or VAS measurements of balance.

  1. Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

    International Nuclear Information System (INIS)

    Shieh, S.Y.; Evans, J.W.

    1992-01-01

    This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

  2. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  3. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  4. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  5. Periodic patterning of silicon by direct nanosecond laser interference ablation

    International Nuclear Information System (INIS)

    Tavera, T.; Pérez, N.; Rodríguez, A.; Yurrita, P.; Olaizola, S.M.; Castaño, E.

    2011-01-01

    The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm -2 , 1.3 J cm -2 , 2.0 J cm -2 ) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm -2 , probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate.

  6. 14 MeV neutron activation analysis for oxygen determination in silicon single-crystals

    International Nuclear Information System (INIS)

    Timus, D.M.; Galatanu, V.; Catana, D.

    1985-01-01

    The nondestructive fast neutron activation method has been applied for the total oxygen content determination with regards to the correlation of this content with the material properties of the silicon. The nuclear reaction used is: 16 O (n,p) 16 N, (Tsub(1/2)=7,4 s). The equipment and experimental set-up of the analytical system contained fast neutron generator GENEDAC, gamma scintillation detector (NaI crystal), a photomultiplier, a preamplifier, a linear amplifier with variable energy discrimination thresholds and a pneumatic conveyor system. The method proposed is rapid (total analysis time is less than 60 s), specific (allows a good energetic discrimination in relation to other elements) and precise, being able to characterize nondestructively the whole volume of the analysed sample

  7. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  8. Thermal detection of single e-h pairs in a biased silicon crystal detector

    Science.gov (United States)

    Romani, R. K.; Brink, P. L.; Cabrera, B.; Cherry, M.; Howarth, T.; Kurinsky, N.; Moffatt, R. A.; Partridge, R.; Ponce, F.; Pyle, M.; Tomada, A.; Yellin, S.; Yen, J. J.; Young, B. A.

    2018-01-01

    We demonstrate that individual electron-hole pairs are resolved in a 1 cm2 by 4 mm thick silicon crystal (0.93 g) operated at ˜35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted electro-thermal-feedback transition edge sensor arrays held near ground potential. The other side contains a bias grid with 20% coverage. Bias potentials up to ±160 V were used in the work reported here. A fiber optic provides 650 nm (1.9 eV) photons that each produce an electron-hole (e- h+) pair in the crystal near the grid. The energy of the drifting charges is measured with a phonon sensor noise σ ˜0.09 e- h+ pair. The observed charge quantization is nearly identical for h+s or e-s transported across the crystal.

  9. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    International Nuclear Information System (INIS)

    Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

    2010-01-01

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  10. Atomic hydrogen and oxygen adsorptions in single-walled zigzag silicon nanotubes

    International Nuclear Information System (INIS)

    Chen, Haoliang; Ray, Asok K.

    2013-01-01

    Ab initio calculations have been performed to study the electronic and geometric structure properties of zigzag silicon nanotubes. Full geometry and spin optimizations have been performed without any symmetry constraints with an all electron 3-21G* basis set and the B3LYP hybrid functional. The largest zigzag SiNT studied here, (12, 0), has a binding energy per atom of 3.584 eV. Atomic hydrogen and oxygen adsorptions on (9, 0) and (10, 0) nanotubes have also been studied by optimizing the distances of the adatoms from both inside and outside the tube. The adatom is initially placed in four adsorption sites-parallel bridge (PB), zigzag bridge (ZB), hollow, and on-top site. The on-top site is the most preferred site for hydrogen atom adsorbed on (9, 0), with an adsorption energy of 3.0 eV and an optimized distance of 1.49 Å from the adatom to the nearest silicon atom. For oxygen adsorption on (9, 0), the most preferred site is the ZB site, with an adsorption energy of 5.987 eV and an optimized distance of 1.72 Å. For atomic hydrogen adsorption on (10, 0), the most preferred site is also the on-top site with an adsorption energy of 3.174 eV and an optimized distance of 1.49 Å. For adsorption of atomic oxygen on (10, 0), the most preferred site is PB site, with an adsorption energy of 6.306 eV and an optimized distance of 1.71 Å. The HOMO–LUMO gaps of (9, 0) after adsorptions of hydrogen and oxygen atoms decrease while the HOMO–LUMO gaps of (10, 0) increase after adsorption of hydrogen and oxygen

  11. Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

    Science.gov (United States)

    Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

    2014-04-01

    There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

  12. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes/polymer composite thin film.

    Science.gov (United States)

    Rajanna, Pramod Mulbagal; Gilshteyn, Evgenia; Yagafarov, Timur; Alekseeva, Alena; Anisimov, Anton; Sergeev, Oleg; Neumueller, Alex; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert

    2018-01-09

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and a thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high quality SWCNTs with an enhanced conductivity by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with different SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit Jsc, open-circuit Voc, and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and efficiency of 3.4% under simulated one-sun AM 1.5G direct illumination. © 2018 IOP Publishing Ltd.

  13. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  14. GeSn-on-insulator substrate formed by direct wafer bonding

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Lee, Kwang Hong; Wang, Bing [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); Bao, Shuyu [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Tan, Chuan Seng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-07-11

    GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

  15. Study of irradiation induced defects in silicon

    International Nuclear Information System (INIS)

    Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

    2000-01-01

    Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

  16. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  17. Wafer-level manufacturing technology of glass microlenses

    Science.gov (United States)

    Gossner, U.; Hoeftmann, T.; Wieland, R.; Hansch, W.

    2014-08-01

    In high-tech products, there is an increasing demand to integrate glass lenses into complex micro systems. Especially in the lighting industry LEDs and laser diodes used for automotive applications require encapsulated micro lenses. To enable low-cost production, manufacturing of micro lenses on wafer level base using a replication technology is a key technology. This requires accurate forming of thousands of lenses with a diameter of 1-2 mm on a 200 mm wafer compliant with mass production. The article will discuss the technical aspects of a lens manufacturing replication process and the challenges, which need to be solved: choice of an appropriate master for replication, thermally robust interlayer coating, choice of replica glass, bonding and separation procedure. A promising approach for the master substrate material is based on a lens structured high-quality glass wafer with high melting point covered by a coating layer of amorphous silicon or germanium. This layer serves as an interlayer for the glass bonding process. Low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition processes allow a deposition of layer coatings with different hydrogen and doping content influencing their chemical and physical behavior. A time reduced molding process using a float glass enables the formation of high quality lenses while preserving the recyclability of the mother substrate. The challenge is the separation of the replica from the master mold. An overview of chemical methods based on optimized etching of coating layer through small channels will be given and the impact of glass etching on surface roughness is discussed.

  18. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  19. Optimization of the Surface Structure on Black Silicon for Surface Passivation.

    Science.gov (United States)

    Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

    2017-12-01

    Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

  20. 77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

    KAUST Repository

    Sallam, M. O.

    2011-07-01

    Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

  1. Modelling deformation and fracture in confectionery wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John [Mechanical Engineering Department, Imperial College London, South Kensington, London, SW7 2AZ, United Kingdom and Nestec York Ltd., Nestlé Product Technology Centre, Haxby Road, PO Box 204, York YO91 1XY (United Kingdom)

    2015-01-22

    The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

  2. Silicon on insulator by ion implantation: A dream or a reality

    Energy Technology Data Exchange (ETDEWEB)

    Pinizzotto, R F [Ultrastructure, Inc., Richardson, TX (USA)

    1985-03-01

    One method of producing a silicon-on-oxide structure is to implant a sufficient dose of oxygen into a conventional silicon substrate to synthesize a layer of SiO/sub 2/ just below the surface. If the proper implant conditions are maintained, the top silicon layer will be a single crystal. The required doses are large, but the use of commercially available medium current implanters can reduce the time to 25 minutes per wafer. This adds about $ 10 per chip in process related costs. A very large implanter (100 mA analyzed beam) may not be the best approach for scaling up the process. The power in the beam and the power required for operation of the machine are both enormous. A more conservative approach of using multiple medium current implanters may prove to be more economical in the long run.

  3. Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

    Science.gov (United States)

    Zoutendyk, J. A.

    1976-01-01

    Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

  4. Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

    Science.gov (United States)

    Cho, Bomin; Um, Sungyong; Sohn, Honglae

    2014-07-01

    Asymmetric porous silicon multilayer (APSM)-based optical biosensor was developed to specify human Immunoglobin G (Ig G). APSM chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon multilayer. APSM prepared from anisotropic etching conditions displayed a sharp reflection resonance in the reflectivity spectrum. Each spot displayed single reflection resonance at different wavelengths as a function of the lateral distance from the Pt counter electrode. The sensor system was consisted of the 3 x 3 spot array of APSM modified with protein A. The system was probed with an aqueous human Ig G. Molecular binding and specificity was monitored as a shift in wavelength of reflection resonance.

  5. Switchable static friction of piezoelectric composite-silicon wafer contacts

    NARCIS (Netherlands)

    Ende, D.A. van den; Fischer, H.R.; Groen, W.A.; Zwaag, S. van der

    2013-01-01

    The meso-scale surface roughness of piezoelectric fiber composites can be manipulated by applying an electric field to a piezocomposite with a polished surface. In the absence of an applied voltage, the tips of the embedded piezoelectric ceramic fibers are below the surface of the piezocomposite and

  6. Switchable static friction of piezoelectric composite—silicon wafer contacts

    NARCIS (Netherlands)

    Van den Ende, D.A.; Fischer, H.R.; Groen, W.A.; Van der Zwaag, S.

    2013-01-01

    The meso-scale surface roughness of piezoelectric fiber composites can be manipulated by applying an electric field to a piezocomposite with a polished surface. In the absence of an applied voltage, the tips of the embedded piezoelectric ceramic fibers are below the surface of the piezocomposite and

  7. Improvement of multicrystalline silicon wafer solar cells by post ...

    Indian Academy of Sciences (India)

    Administrator

    post-fabrication wet-chemical etching in phosphoric acid. A MEFOUED1,2,*, M FATHI1, ... and RCA decontamination stages by putting them in a bath made of ... found to be decreasing after chemical attack as shown in figure 2. In order to ...

  8. Wafer Cakes of Improved Amino Acid Structure

    Directory of Open Access Journals (Sweden)

    Roksolana Boidunyk

    2017-11-01

    Full Text Available The article presents the results of the study of the amino acid composition of newly developed wafer cakes with adipose fillings combined with natural additives. The appropriateness of the using non-traditional raw materials (powder of willow herb, poppy oilcake, carob, as well as skimmed milk powder in order to increase the biological value of wafer cakes and improve their amino acid composition is proven.

  9. On the design and implementation of a wafer yield editor

    NARCIS (Netherlands)

    Pineda de Gyvez, J.; Jess, J.A.G.

    1989-01-01

    An interactive environment is presented for the analysis of yield information required on modern integrated circuit manufacturing lines. The system estimates wafer yields and wafer-yield variations, quantifies regional yield variations within wafers, identifies clusters in wafers and/or in lots, and

  10. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  11. Development of a classical force field for the oxidized Si surface: application to hydrophilic wafer bonding.

    Science.gov (United States)

    Cole, Daniel J; Payne, Mike C; Csányi, Gábor; Spearing, S Mark; Colombi Ciacchi, Lucio

    2007-11-28

    We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidized Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO(2) polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress, and interactions with single water molecules of a natively oxidized Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidized and amorphous silica surfaces of 97 and 90 mJm(2), respectively, at a water adsorption coverage of approximately 1 ML. The difference arises from the stronger interaction of the natively oxidized surface with liquid water, resulting in a higher heat of immersion (203 vs 166 mJm(2)), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller densities with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.

  12. Local structure of the silicon implanted in a graphite single crystal

    International Nuclear Information System (INIS)

    Baba, Yuji; Shimoyama, Iwao; Sekiguchi, Tetsuhiro

    2002-01-01

    Solid carbon forms two kinds of local structures, i.e., diamond-like and two-dimensional graphite structures. In contrast, silicon carbide tends to prefer only diamond structure that is composed of sp 3 bonds. In order to clarify weather or not two-dimensional graphitic Si x C layer exists, we investigate the local structures of Si x C layer produced by Si + -ion implantation into highly oriented pyrolytic graphite (HOPG) by means of near-edge X-ray absorption fine structure (NEXAFS). The energy of the resonance peak in the Si K-edge NEXAFS spectra for Si + -implanted HOPG is lower than those for any other Si-containing materials. The intensity of the resonance peak showed a strong polarization dependence. These results suggests that the final state orbitals around Si atoms have π*-like character and the direction of this orbital is perpendicular to the graphite plane. It is elucidated that the Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms a two-dimensionally spread graphite-like layer with sp 2 bonds. (author)

  13. Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions.

    Science.gov (United States)

    Kim, Sung Wook; Lee, Jaejun; Sung, Ji Ho; Seo, Dong-jae; Kim, Ilsoo; Jo, Moon-Ho; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2014-07-22

    Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.

  14. Modelling of heating and photoexcitation of single-crystal silicon under multipulse irradiation by a nanosecond laser at 1.06 μm

    Science.gov (United States)

    Polyakov, D. S.; Yakovlev, E. B.

    2018-03-01

    We report a theoretical study of heating and photoexcitation of single-crystal silicon by nanosecond laser radiation at a wavelength of 1.06 μm. The proposed physicomathematical model of heating takes into account the complex nonlinear dynamics of the interband absorption coefficient of silicon and the contribution of the radial heat removal to the cooling of silicon between pulses under multipulse irradiation, which allows one to obtain a satisfactory agreement between theoretical predictions of silicon melting thresholds at different nanosecond pulse durations and experimental data (both under single-pulse and multipulse irradiation). It is found that under irradiation by nanosecond pulses at a wavelength of 1.06 μm, the dynamic Burshtein–Moss effect can play an important role in processes of photoexcitation and heating. It is shown that with the regimes typical for laser multipulse microprocessing of silicon (the laser spot diameter is less than 100 μm, and the repetition rate of pulses is about 100 kHz), the radial heat removal cannot be neglected in the analysis of heat accumulation processes.

  15. Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding

    Science.gov (United States)

    Lebedev, V.; Lisec, T.; Yoshikawa, T.; Reusch, M.; Iankov, D.; Giese, C.; Žukauskaitė, A.; Cimalla, V.; Ambacher, O.

    2017-06-01

    In this work, the adhesive wafer bonding of diamond thin films onto 8″ silicon substrates is reported. In order to characterize bonded nano-crystalline diamond layers, vibrometry and interferometry studies of micro-fabricated flexural beam and disk resonators were carried out. In particular, surface topology along with resonant frequencies, eigenmodes and mechanical quality factors were recorded and analyzed in order to obtain physical parameters of the transferred films. The vibration properties of the bonded resonators were compared to those fabricated directly on 3″ silicon substrates.

  16. Modeling the wafer temperature profile in a multiwafer LPCVD furnace

    Energy Technology Data Exchange (ETDEWEB)

    Badgwell, T.A. [Rice Univ., Houston, TX (United States). Dept. of Chemical Engineering; Trachtenberg, I.; Edgar, T.F. [Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering

    1994-01-01

    A mathematical model has been developed to predict wafer temperatures within a hot-wall multiwafer low pressure chemical vapor deposition (LPCVD) reactor. The model predicts both axial (wafer-to-wafer) and radial (across-wafer) temperature profiles. Model predictions compare favorably with in situ wafer temperature measurements described in an earlier paper. Measured axial and radial temperature nonuniformities are explained in terms of radiative heat-transfer effects. A simulation study demonstrates how changes in the outer tube temperature profile and reactor geometry affect wafer temperatures. Reactor design changes which could improve the wafer temperature profile are discussed.

  17. III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

    Science.gov (United States)

    Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

    2018-04-01

    Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

  18. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  19. Field induced decrystallization of silicon: Evidence of a microwave non-thermal effect

    Science.gov (United States)

    Nozariasbmarz, Amin; Dsouza, Kelvin; Vashaee, Daryoosh

    2018-02-01

    It is rather strange and not fully understood that some materials decrystallize when exposed to microwave radiation, and it is still debatable if such a transformation is a thermal or non-thermal effect. We hereby report experimental evidences that weight the latter effect. First, a single crystal silicon wafer exposed to microwaves showed strong decrystallization at high temperature. Second, when some areas of the wafer were masked with metal coating, only the exposed areas underwent decrystallization. Transmission electron microscopy analysis, x-ray diffraction data, and thermal conductivity measurements all indicated strong decrystallization, which occurred in the bulk of the material and was not a surface effect. These observations favor the existence of a non-thermal microwave effect.

  20. Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation

    International Nuclear Information System (INIS)

    Drosd, R.M.

    1979-11-01

    The recrystallization behavior during annealing of thin films of amorphous (α) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77 0 K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77 0 K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100 0 C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations