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Sample records for single semiconductor switch

  1. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  2. Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2017-11-01

    Full Text Available In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

  3. A Component-Minimized Single-Phase Active Power Decoupling Circuit with Reduced Current Stress to Semiconductor Switches

    DEFF Research Database (Denmark)

    Tang, Yi; Blaabjerg, Frede

    2015-01-01

    component, e.g. inductors or film capacitors for ripple energy storage because this task can be accomplished by the dc-link capacitors, and therefore its implementation cost can be minimized. Another unique feature of the proposed topology is that the current stress of power semiconductors can be reduced...

  4. Timing and amplitude jitter in a gain-switched multimode semiconductor laser

    Science.gov (United States)

    Wada, Kenji; Kitagawa, Naoaki; Matsukura, Satoru; Matsuyama, Tetsuya; Horinaka, Hiromichi

    2016-04-01

    The differences in timing jitter between a gain-switched single-mode semiconductor laser and a gain-switched multimode semiconductor laser are examined using rate equations that include Langevin noise. The timing jitter in a gain-switched multimode semiconductor laser is found to be effectively suppressed by a decrease in the coherence time of the amplified spontaneous emission (ASE) based on a broad bandwidth of multimode oscillation. Instead, fluctuations in the ASE cause amplitude jitter in the pulse components of the respective modes. A pulse train of gain-switched pulses from a multimode semiconductor laser with timing jitter is equivalently simulated by assuming a high spontaneous emission factor and a short coherence time of the ASE in the single-mode semiconductor laser rate equations.

  5. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  6. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  7. Transistor electronics use of semiconductor components in switching operations

    CERN Document Server

    Rumpf, Karl-Heinz

    2014-01-01

    Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

  8. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  9. A new FET-bipolar combinational power semiconductor switch

    Science.gov (United States)

    Chen, D. Y.; Chandrasekaran, S.; Chin, S. A.

    1984-01-01

    A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

  10. An Electron-Beam Controlled Semiconductor Switch

    Science.gov (United States)

    1989-11-01

    transport processes are linear, i.e the drift velocity is v = pE and the diffusion coeffient follows the Einstein relation D = ikBT/e where k9 denotes...357/19 SEMICONDUC OR SWITCH WIrH 3,917,943 11/1975 Auston............................. 250/211 J CATHODOLLJNE SCENT ELECTRON

  11. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O' Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  12. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  13. Transparent ceramic photo-optical semiconductor high power switches

    Science.gov (United States)

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  14. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...... and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved....

  15. High gain photoconductive semiconductor switch having tailored doping profile zones

    Science.gov (United States)

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  16. Coherent manipulation of single spins in semiconductors.

    Science.gov (United States)

    Hanson, Ronald; Awschalom, David D

    2008-06-19

    During the past few years, researchers have gained unprecedented control over spins in the solid state. What was considered almost impossible a decade ago, in both conceptual and practical terms, is now a reality: single spins can be isolated, initialized, coherently manipulated and read out using both electrical and optical techniques. Progress has been made towards full control of the quantum states of single and coupled spins in a variety of semiconductors and nanostructures, and towards understanding the mechanisms through which spins lose coherence in these systems. These abilities will allow pioneering investigations of fundamental quantum-mechanical processes and provide pathways towards applications in quantum information processing.

  17. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  18. Transient Rayleigh scattering from single semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-12-04

    Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

  19. An investigation of semiconductor nanoparticles for application to all-optical switching

    Science.gov (United States)

    Born, Brandon; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2016-03-01

    A practical all-optical switch is necessary to alleviate electronic bottlenecks in fibre optic networks. Thus, a new alloptical switch is introduced here—exhibiting femtojoule switching energies and femtosecond switching times. The alloptical switches use 40 μm dielectric spheres to direct high-intensity photonic nanojets into peripheral coatings of semiconductor nanoparticles. Semiconductor nanoparticle coatings of Si, CdTe, InP, and CuO are studied and found to yield switching energies of approximately 1 pJ, 500 fJ, 400 fJ, and 300 fJ with switching times of 2 ps, 2.3 ps, 900 fs, and 350 fs, respectively.

  20. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

    Science.gov (United States)

    Cong, Wen; Li, Dechun; Zhao, Shengzhi; Yang, Kejian; Li, Xiangyang; Qiao, Hui; Liu, Ji

    2014-12-01

    Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser.

  1. Charge transport in single crystal organic semiconductors

    Science.gov (United States)

    Xie, Wei

    Organic electronics have engendered substantial interest in printable, flexible and large-area applications thanks to their low fabrication cost per unit area, chemical versatility and solution processability. Nevertheless, fundamental understanding of device physics and charge transport in organic semiconductors lag somewhat behind, partially due to ubiquitous defects and impurities in technologically useful organic thin films, formed either by vacuum deposition or solution process. In this context, single-crystalline organic semiconductors, or organic single crystals, have therefore provided the ideal system for transport studies. Organic single crystals are characterized by their high chemical purity and outstanding structural perfection, leading to significantly improved electrical properties compared with their thin-film counterparts. Importantly, the surfaces of the crystals are molecularly flat, an ideal condition for building field-effect transistors (FETs). Progress in organic single crystal FETs (SC-FETs) is tremendous during the past decade. Large mobilities ~ 1 - 10 cm2V-1s-1 have been achieved in several crystals, allowing a wide range of electrical, optical, mechanical, structural, and theoretical studies. Several challenges still remain, however, which are the motivation of this thesis. The first challenge is to delineate the crystal structure/electrical property relationship for development of high-performance organic semiconductors. This thesis demonstrates a full spectrum of studies spanning from chemical synthesis, single crystal structure determination, quantum-chemical calculation, SC-OFET fabrication, electrical measurement, photoelectron spectroscopy characterization and extensive device optimization in a series of new rubrene derivatives, motivated by the fact that rubrene is a benchmark semiconductor with record hole mobility ~ 20 cm2V-1s-1. With successful preservation of beneficial pi-stacking structures, these rubrene derivatives form

  2. Comparison of soft and hard-switching effiency in a three-level single phase 60kW dc-ac converter

    DEFF Research Database (Denmark)

    Munk-Nielsen, Stig; Teodorescu, Remus; Bech, Michael Møller

    2003-01-01

    Efficiency measurements on a three-level single-phase soft-switched converter are presented and show a slightly improved efficiency compared with the hard-switched converter for output powers higher than 25 % of rated power. The resonant converter switches are Zero Voltage Switched (ZVS......) and a simple resonant circuit is used. Increased resonant converter efficiency enables a reduction in the semiconductor size pr. watt output power or an increase the switching frequency....

  3. Chemical switches and logic gates based on surface modified semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Szacilowski; Wojciech, Macyk [Jagiellonian Univ., Dept. of Chemistry, Krakow (Poland)

    2006-02-15

    Photoelectrochemical properties of multicomponent photo-electrodes based on titanium dioxide and cadmium sulfide powders modified with hexacyanoferrate complexes have been examined. Photocurrent responses were recorded as functions of applied potential and photon energy. Surprisingly, the photocurrent can be switched between positive and negative values as a result of potential or photon energy changes. This new effect called Photo Electrochemical Photocurrent Switching (PEPS) opens a possibility of new chemical switches and logic gates construction. Boolean logic analysis and a tentative mechanism of the device are discussed. (authors)

  4. Multi-Valued Spin Switch in a Semiconductor Microcavity

    Science.gov (United States)

    Paraïso, T. K.; Wouters, M.; Léger, Y.; Morier-Genoud, F.; Deveaudhyphen; Plédran, B.

    2011-12-01

    In this work, we report on the first realization of multi-valued spin switching in the solid-state. We investigate the physics of spinor bistability with microcavity polaritons in a trap. Spinor interactions lead to special bistability regimes with decoupled thresholds for spin-up and spin-down polaritons. This allows us to establish state-of-the-art spin switching operations. We evidence polarization hysteresis and determine appropriate conditions to achieve spin multistability. For a given excitation condition, three stable spin states coexist for the system. These results open new pathways for the development of innovative spin-based logic gates and memory devices.

  5. Experimental and theoretical investigation of semiconductor optical amplifier (SOA) based all-optical switches

    DEFF Research Database (Denmark)

    Nielsen, Mads Lønstrup

    2004-01-01

    optical networks. The factors governing the modulation bandwidth of SOAs are determined, and schemes for reducing detrimental patterning effects are discussed. Three types of SOA-based switches are investigated numerically: so-called standardmode and differential-mode switches, and the filtering assisted......This thesis analyzes semiconductor optical amplifier (SOA) based all-optical switches experimentally and through numerical simulations. These devices are candidates for optical signal processing functionalities such as wavelength conversion, regeneration, and logic processing in future transparent...... switch. Differential -mode switches are shown to eliminate one contribution to the patterning effects, referred to as the linear patterning. This enables operation at bitrates far beyond the limit set by the carrier lifetime, but ultimately a saturation-induced patterning effect, nonlinear patterning...

  6. Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    , it compensates the mechanical size limitations of the Pearson current monitor. Finally, experimental studied are carried out with both discrete Silicon Carbide (SiC) MOSFET and high current (1000A) Silicon (Si) IGBT power modules. The experimental results validate the effectiveness of the proposed method.......This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...... regarding three essential qualities: high bandwidth, suitable physical size, and galvanic isolation. Then, the proposed current measurement method with SSCT is mathematically analyzed, which proves that the proposed method has the capability of measuring fast switching current. Simultaneously...

  7. Note: All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches.

    Science.gov (United States)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Fan, Yajun; Liu, Chunliang

    2016-08-01

    An all solid-state high repetitive sub-nanosecond risetime pulse generator featuring low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switches and a step-type transmission line is presented. The step-type transmission line with two stages is charged to a potential of 5.0 kV also biasing at the switches. The bulk GaAs avalanche semiconductor switch closes within sub-nanosecond range when illuminated with approximately 87 nJ of laser energy at 905 nm in a single pulse. An asymmetric dipolar pulse with peak-to-peak amplitude of 9.6 kV and risetime of 0.65 ns is produced on a resistive load of 50 Ω. A technique that allows for repetition-rate multiplication of pulse trains experimentally demonstrated that the parallel-connected bulk GaAs avalanche semiconductor switches are triggered in sequence. The highest repetition rate is decided by recovery time of the bulk GaAs avalanche semiconductor switch, and the operating result of 100 kHz of the generator is discussed.

  8. Single-photon imaging in complementary metal oxide semiconductor processes

    NARCIS (Netherlands)

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image

  9. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

    Science.gov (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

    2018-01-01

    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley – Read – Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  10. Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

    Science.gov (United States)

    Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

    2011-05-01

    The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

  11. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  12. High-power subnanosecond operation of a bistable optically controlled semiconductor switch (BOSS)

    International Nuclear Information System (INIS)

    Stoudt, D.C.; Richardson, M.A.; Demske, D.L.; Roush, R.A.; Eure, K.W.

    1994-01-01

    Recent high-power, subnanosecond-switching results of the Bistable Optically controlled Semiconductor Switch (BOSS) are presented. The process of persistent photoconductivity followed by photo-quenching have been demonstrated at megawatt power levels in copper-compensated, silicon-doped, semi-insulating gallium arsenide. These processes allow a switch to be developed that can be closed by the application of one laser pulse and opened by the application of a second laser pulse with a wavelength equal to twice that of the first laser. Switch closure is primarily achieved by elevating electrons from a deep copper center which has been diffused into the material. The opening phase is a two-step process which relies initially on the absorption of the 2-μm laser causing electrons to be elevated from the valance band back into the copper center, and finally on the recombination of electrons in the conduction band with boles in the valance band. The second step requires a sufficient concentration of recombination centers (RC) in the material for opening to occur in the subnanosecond regime. These RC's are generated in the bulk GaAs material by fast-neutron irradiation (∼ 1 MeV) at a fluence of about 3 x 10 15 cm -2 . High-power switching results which demonstrate that the BOSS switch can be opened in the subnanosecond regime are presented for the first time. Neutron-irradiated BOSS devices have been opened against a rising electric field of about 20 kV/cm (10 kV) in a time less than one nanosecond. Kilovolt electrical pulses have been generated with a FWHM of roughly 250 picoseconds

  13. Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

    Directory of Open Access Journals (Sweden)

    Fumihiko Tamura

    2002-06-01

    Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

  14. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1994-01-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

  15. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  16. Programmed Switching of Single Polymer Conformation on DNA Origami

    DEFF Research Database (Denmark)

    Krissanaprasit, Abhichart; Madsen, Mikael; Knudsen, Jakob Bach

    2016-01-01

    ) by DNA hybridization directed by single-stranded guiding strands and ssDNA tracks extending from the origami surface and polymer handle. We demonstrate switching of a conjugated organic polymer conformation between left- and right-turned conformations of the polymer on DNA origami based on toehold......-mediated strand displacement. The switching is observed by atomic force microscopy and by Förster resonance energy transfer between the polymer and two different organic dyes positioned in close proximity to the respective patterns. Using this method, the polymer conformation can be switched six times...... successively. This controlled nanomechanical switching of conjugated organic polymer conformation demonstrates unique control of the shape of a single polymer molecule, and it may constitute a new component for the development of reconfigurable nanophotonic and nanoelectronic devices....

  17. A Novel Single Phase Hybrid Switched Reluctance Motor Drive System

    DEFF Research Database (Denmark)

    Liang, Jianing; Xu, Guoqing; Jian, Linni

    2011-01-01

    phase boost converter is applied to improve the performance of this motor. It is easy to generate a double dclink voltage and dc-link voltage and switch both of them. The voltage of boost capacitor is self balance, so the protective circuit is not need to consider. The fast excitation mode helps hybrid......In this paper, a novel single phase hybrid switched reluctance motor(SRM) drive system is proposed. It integrated a single phase hybrid SRM and a novel single phase boost converter. This motor can reduce the number of phase switch. And the permanent magnet which is used in the motor can improve...... the performance and efficiency of SR motor. However, the inherent characteristic of this motor is that the negative torque is very sensitive with the excitation current near the turn-on angle. The slow excitation current limits the torque generation region and reduces the average torque. Therefore, a novel single...

  18. Single electron-spin memory with a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

    2007-01-01

    We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

  19. 1-D position sensitive single carrier semiconductor detectors

    International Nuclear Information System (INIS)

    Zhong He; Knoll, G.F.; Wehe, D.K.; Rojeski, R.; Mastrangelo, C.H.; Hammig, M.; Barrett, C.; Uritani, A.

    1996-01-01

    A single polarity charge sensing method has been studied using coplanar electrodes on 5 mm cubes of CdZnTe γ-ray detectors. This method can ameliorate the hole trapping problem of room-temperature semiconductor detectors. Our experimental results confirm that the energy resolution is dramatically improved compared with that obtained using the conventional readout method, but is still about an order of magnitude worse than the theoretical limit. A method to obtain the γ-ray interaction depth between the cathode and the anode is presented here. This technique could be used to correct for the electron trapping as a function of distance from the coplanar electrodes. Experimental results showed that a position resolution of about 0.9 mm FWHM at 122 keV can be obtained. These results will be of interest in the design of higher performance room-temperature semiconductor γ-ray detectors. (orig.)

  20. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten

    2015-04-16

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  1. All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

    OpenAIRE

    Al-Dirini, Feras; Hossain, Faruque M.; Nirmalathas, Ampalavanapillai; Skafidas, Efstratios

    2014-01-01

    Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of na...

  2. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    Science.gov (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  3. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Masoller, C. [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, ES-08222 Terrassa, Barcelona (Spain); Sukow, D. [Institute for Cross-Disciplinary Physics and Complex Systems, Campus Universitat de les Illes Balears, ES-07122 Palma de Mallorca (Spain); Gavrielides, A. [Air Force Research Laboratory, AFRL/EOARD, 86 Blenheim Crescent, Ruislip Middlesex HA4 7HB (United Kingdom); Sciamanna, M. [Optics and Electronics (OPTEL) Research Group, Laboratoire Materiaux Optiques, Photonique et Systemes (LMOPS), Supelec, 2 Rue Edouard Belin, FR-57070 Metz (France)

    2011-08-15

    We analyze the dynamics of two semiconductor lasers with so-called orthogonal time-delayed mutual coupling: the dominant TE (x) modes of each laser are rotated by 90 deg. (therefore, TM polarization or y) before being coupled to the other laser. Although this laser system allows for steady-state emission in either one or in both polarization modes, it may also exhibit stable time-periodic dynamics including square waveforms. A theoretical mapping of the switching dynamics unveils the region in parameter space where one expects to observe long-term time-periodic mode switching. Detailed numerical simulations illustrate the role played by the coupling strength, the mode frequency detuning, or the mode gain to loss difference. We complement our theoretical study with several experiments and measurements. We present time series and intensity spectra associated with the characteristics of the square waves and other waveforms observed as a function of the strength of the delay coupling. The experimental observations are in very good agreement with the analysis and the numerical results.

  5. Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

    KAUST Repository

    Niazi, Muhammad Rizwan

    2015-11-23

    Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of<1 V and low subthreshold swings <0.5 V dec−1). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

  6. Threshold switching in the amorphous semiconductor As/sub 15/Te/sub 70/Ge/sub 15/ and in the organic semiconductor melanin

    Energy Technology Data Exchange (ETDEWEB)

    Culp, C.H. III

    1976-06-01

    The threshold switching properties of the amorphous semiconductor As/sub 15/Te/sub 70/Ge/sub 15/ and the organic semiconductor melanin have been examined with threshold switching experiments. Measurements of delay time, energy and average resistance as functions of applied voltage were made by a computer controlled data acquisition system. These measurements were made on As/sub 15/Te/sub 70/Ge/sub 15/ at 243, 273 and 298/sup 0/K. A time dependent electrothermal model was solved numerically. The material parameters that were measured for this model are activation energy, sample thickness, conductivity at T equal to infinity, and area of the electrodes. With these measured parameters the calculation was compared to the experimental values of delay time, energy, and average resistance as functions of applied voltage. The measured data and the calculations are in good agreement. Melanin was prepared from a lyophilized powder into a hydrated pellet. The melanin pellets were studied at 298, 190, and 77/sup 0/K with a double pulse apparatus. Time dependent current versus voltage characteristics were also measured. Melanin exhibits threshold switching at low electric fields (about 10/sup 2/ V/cm). The results from the melanin experiments show that threshold switching in melanin can be explained by a thermal runaway model. A pseudo-memory effect was also found in melanin.

  7. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

    2002-01-01

    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  8. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    . This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved...

  9. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable....... This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved...

  10. Fast and flexible selection with a single switch.

    Directory of Open Access Journals (Sweden)

    Tamara Broderick

    Full Text Available Selection methods that require only a single-switch input, such as a button click or blink, are potentially useful for individuals with motor impairments, mobile technology users, and individuals wishing to transmit information securely. We present a single-switch selection method, "Nomon," that is general and efficient. Existing single-switch selection methods require selectable options to be arranged in ways that limit potential applications. By contrast, traditional operating systems, web browsers, and free-form applications (such as drawing place options at arbitrary points on the screen. Nomon, however, has the flexibility to select any point on a screen. Nomon adapts automatically to an individual's clicking ability; it allows a person who clicks precisely to make a selection quickly and allows a person who clicks imprecisely more time to make a selection without error. Nomon reaps gains in information rate by allowing the specification of beliefs (priors about option selection probabilities and by avoiding tree-based selection schemes in favor of direct (posterior inference. We have developed both a Nomon-based writing application and a drawing application. To evaluate Nomon's performance, we compared the writing application with a popular existing method for single-switch writing (row-column scanning. Novice users wrote 35% faster with the Nomon interface than with the scanning interface. An experienced user (author TB, with 10 hours practice wrote at speeds of 9.3 words per minute with Nomon, using 1.2 clicks per character and making no errors in the final text.

  11. Single-photon imaging in complementary metal oxide semiconductor processes

    Science.gov (United States)

    Charbon, E.

    2014-01-01

    This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

  12. Three new DC-to-DC Single-Switch Converters

    Directory of Open Access Journals (Sweden)

    Barry W. Williams

    2017-06-01

    Full Text Available This paper presents a new family of three previously unidentified dc-to-dc converters, buck, boost, and buck-boost voltage-transfer-function topologies, which offer advantageous transformer coupling features and low capacitor dc voltage stressing. The three single-switch, single-diode, converters offer the same features as basic dc-to-dc converters, such as the buck function with continuous output current and the boost function with continuous input current. Converter time-domain simulations and experimental results (including transformer coupling support and extol the dc-to-dc converter concepts and analysis presented.

  13. Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

    Science.gov (United States)

    2016-09-27

    ARL-TR-7819 ● SEP 2016 US Army Research Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs...Laboratory Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication by...Report 3. DATES COVERED (From - To) January 2016–September 2016 4. TITLE AND SUBTITLE Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs

  14. Probing and controlling fluorescence blinking of single semiconductor nanoparticles

    Directory of Open Access Journals (Sweden)

    Hsien-Chen Ko

    2011-02-01

    Full Text Available In this review we present an overview of the experimental and theoretical development on fluorescence intermittency (blinking and the roles of electron transfer in semiconductor crystalline nanoparticles. Blinking is a very interesting phenomenon commonly observed in single molecule/particle experiments. Under continuous laser illumination, the fluorescence time trace of these single nanoparticles exhibit random light and dark periods. Since its first observation in the mid-1990s, this intriguing phenomenon has attracted wide attention among researchers from many disciplines. We will first present the historical background of the discovery and the observation of unusual inverse power-law dependence for the waiting time distributions of light and dark periods. Then, we will describe our theoretical modeling efforts to elucidate the causes for the power-law behavior, to probe the roles of electron transfer in blinking, and eventually to control blinking and to achieve complete suppression of the blinking, which is an annoying feature in many applications of quantum dots as light sources and fluorescence labels for biomedical imaging.

  15. Spatially resolved Hall effect measurement in a single semiconductor nanowire

    Science.gov (United States)

    Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M.; Monemar, Bo; Samuelson, Lars

    2012-12-01

    Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

  16. On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos

    compared to Si semiconductors. Moreover, both semiconductor materials are particularly interesting for high temperature operation. These characteristics makes integration of SiC and GaN devices as the next logical step to further increase efficiency and power density in SMPS. This work is part of the Ph....../650 V range, and recent developments on the integration of GaN devices in SMPS are provided. The second part of the thesis provides an insight on semiconductor characterization and compares state-of-the-art Si technology to current available GaN switches. After this overview, a comparison between...... continuous (CCM) and boundary conduction modes (BCM) in PFC applications is provided based on the semiconductor characterization data. The comparison takes into consideration the electro magnetic interference (EMI) filter size and the converter input inductor volume, as a necessary part for evaluating...

  17. Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

    International Nuclear Information System (INIS)

    Ma Xiangrong; Shi Wei; Xiang Mei

    2013-01-01

    Experiments with the limited space-charge accumulation (LSA) mode of oscillation in a large gap semi-insulating (SI) GaAs photoconductive semiconductor switch (PCSS) are discussed. It has been observed that growth and drift of a photo-activated charge domain (PACD) are quenched only when the bias voltage is more than twice the threshold voltage. The original negative resistance characteristics are directly utilized in the LSA mode; during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity—electric field characteristic. The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time. The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage. (semiconductor devices)

  18. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    International Nuclear Information System (INIS)

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-01-01

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10 17  m −2 . We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching

  19. Study of all optical switching behaviour in semiconductor microresonator with nano-active layer

    International Nuclear Information System (INIS)

    Kheradmand, R; Aryan, H

    2010-01-01

    In this paper the behaviour of carriers in spontaneous patterns formation and patterns switching has been studied. Results demonstrate that with increasing length of cavity the range of required input field amplitude for patterns formation increased slightly and also the minimum perturbation coefficient for switching decreased greatly. Increasing nonradiative recombination rate of carriers about ten percent appeared that required input field amplitude for patterns formation raised more than before, albeit the minimum perturbation coefficient for switching and switching and switching time dose not vary considerably.

  20. Study of all optical switching behaviour in semiconductor microresonator with nano-active layer

    Energy Technology Data Exchange (ETDEWEB)

    Kheradmand, R; Aryan, H, E-mail: r_kheradmand@tabrizu.ac.i, E-mail: aryan86@ms.tabrizu.ac.i [Photonics Group, Research Institute for Applied Physics and Astronomy, Tabriz University, Tabriz (Iran, Islamic Republic of)

    2010-11-01

    In this paper the behaviour of carriers in spontaneous patterns formation and patterns switching has been studied. Results demonstrate that with increasing length of cavity the range of required input field amplitude for patterns formation increased slightly and also the minimum perturbation coefficient for switching decreased greatly. Increasing nonradiative recombination rate of carriers about ten percent appeared that required input field amplitude for patterns formation raised more than before, albeit the minimum perturbation coefficient for switching and switching and switching time dose not vary considerably.

  1. Optical label switching in telecommunication using semiconductor lasers, amplifiers and electro-absorption modulators

    DEFF Research Database (Denmark)

    Chi, Nan; Christiansen, Lotte Jin; Jeppesen, Palle

    2004-01-01

    We demonstrate all-optical label encoding and updating for an orthogonally labeled signal in combined IM/FSK modulation format utilizing semiconductor lasers, semiconductor optical amplifiers and electro-absorption modulators. Complete functionality of a network node including two-hop transmissio...

  2. Development of High Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders

    International Nuclear Information System (INIS)

    Tantawi, Sami

    2000-01-01

    We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band

  3. Drift estimation for single marker switching based imaging schemes.

    Science.gov (United States)

    Geisler, Claudia; Hotz, Thomas; Schönle, Andreas; Hell, Stefan W; Munk, Axel; Egner, Alexander

    2012-03-26

    In recent years, the diffraction barrier in fluorescence imaging has been broken and optical nanoscopes now routinely image with resolutions of down to 20 nm, an improvement of more than 10 fold. Because this allows imaging much smaller features and because all super-resolution approaches trade off speed for spatial resolution, mechanical instabilities of the microscopes become a limiting factor. Here, we propose a fully data-driven statistical registration method for drift detection and drift correction for single marker switching (SMS) imaging schemes, including a guideline for parameter choice and quality checks of the drift analysis. The necessary assumptions about the drift are minimal, allowing a model-free approach, but more specific models can easily be integrated. We determine the resulting performance on standard SMS measurements and show that the drift determination can be routinely brought to the range of precision achievable by fiducial marker-tracking methods.

  4. Switching Plasmons: Gold Nanorod-Copper Chalcogenide Core-Shell Nanoparticle Clusters with Selectable Metal/Semiconductor NIR Plasmon Resonances.

    Science.gov (United States)

    Muhammed, Madathumpady Abubaker Habeeb; Döblinger, Markus; Rodríguez-Fernández, Jessica

    2015-09-16

    Exerting control over the near-infrared (NIR) plasmonic response of nanosized metals and semiconductors can facilitate access to unexplored phenomena and applications. Here we combine electrostatic self-assembly and Cd(2+)/Cu(+) cation exchange to obtain an anisotropic core-shell nanoparticle cluster (NPC) whose optical properties stem from two dissimilar plasmonic materials: a gold nanorod (AuNR) core and a copper selenide (Cu(2-x)Se, x ≥ 0) supraparticle shell. The spectral response of the AuNR@Cu2Se NPCs is governed by the transverse and longitudinal plasmon bands (LPB) of the anisotropic metallic core, since the Cu2Se shell is nonplasmonic. Under aerobic conditions the shell undergoes vacancy doping (x > 0), leading to the plasmon-rich NIR spectrum of the AuNR@Cu(2-x)Se NPCs. For low vacancy doping levels the NIR optical properties of the dually plasmonic NPCs are determined by the LPBs of the semiconductor shell (along its major longitudinal axis) and of the metal core. Conversely, for high vacancy doping levels their NIR optical response is dominated by the two most intense plasmon modes from the shell: the transverse (along the shortest transversal axis) and longitudinal (along the major longitudinal axis) modes. The optical properties of the NPCs can be reversibly switched back to a purely metallic plasmonic character upon reversible conversion of AuNR@Cu(2-x)Se into AuNR@Cu2Se. Such well-defined nanosized colloidal assemblies feature the unique ability of holding an all-metallic, a metallic/semiconductor, or an all-semiconductor plasmonic response in the NIR. Therefore, they can serve as an ideal platform to evaluate the crosstalk between plasmonic metals and plasmonic semiconductors at the nanoscale. Furthermore, their versatility to display plasmon modes in the first, second, or both NIR windows is particularly advantageous for bioapplications, especially considering their strong absorbing and near-field enhancing properties.

  5. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this Phase II proposal we plan to design and develop a semiconductor, low phase/frequency noise, single-frequency, external cavity semiconductor laser (ECL)...

  6. Optimal design of semiconductor opening switches for use in the inductive stage of high power pulse generators

    Science.gov (United States)

    Engelko, A.; Bluhm, H.

    2004-05-01

    Semiconductor opening switches (SOS) are able to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 ns, operate at repetition rates up to 1 kHz, and possess lifetimes of more than 1011 pulses. If stacked, SOS diodes can hold off voltage levels up to several 100 kV. They are therefore ideal for the design of compact high voltage pulse generators of the GW-class for industrial applications. The aim of this work was to improve our understanding of the opening process in a semiconductor diode of SOS-type with a doping profile of p+pnn+ structure, obtainable through diffusion from the surfaces. To simulate the physical processes inside this diode the code POSEOSS was developed. It contains a detailed physical model of charge carrier transport under the influence of density gradients and electric fields and considers all relevant generation and recombination processes. It possesses a large degree of flexibility and is easy to use, and thus allows to carry out parameter studies to determine the influence of different physical quantities, such as doping and impurity levels, on the performance of the device. When applying the code some interesting results concerning the plasma dynamics during the opening process in the switch have been found. In particular, using realistic values for the charge carrier mobility, it was found that the opening process starts first at the n-n+ boundary. Also it has been possible to derive the physical conditions for the occurrence of the SOS-effect. Based on the simulation results a simplified SOS equivalent circuit model has been developed. This model can be used in the circuit simulation program PSPICE. A pulse generator scheme based on inductive storage is proposed, in which power multiplication is achieved by unloading the inductors, previously charged in series, in parallel. This scheme can be considered as the inductive equivalent of a Marx-generator. PSPICE simulations of such a scheme based on semiconductor opening

  7. Characterization of Disorder in Semiconductors via Single-Photon Interferometry

    Science.gov (United States)

    Bozsoki, P.; Thomas, P.; Kira, M.; Hoyer, W.; Meier, T.; Koch, S. W.; Maschke, K.; Varga, I.; Stolz, H.

    2006-12-01

    The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures. The theoretical expression for the angular correlations is derived and numerically evaluated for a model system. The results demonstrate how the proposed experimental method yields direct information about the spatial distribution of the relevant states and thus on the disorder present in the system.

  8. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  9. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  10. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  11. Measurement of switching field reduction of single domain particles in a two-dimensional array

    Science.gov (United States)

    Vértesy, G.; Pardavi-Horvath, M.

    2001-12-01

    The mechanism of switching of uniaxial, single domain, single crystalline epitaxial garnet particles on a two-dimensional square array was investigated, and the reason for the wide distribution of switching fields was studied. In spite that the particles were found very uniform, the existence of soft magnetic defects, not connected to visible crystalline or manufacturing defects of the material, was found to be responsible for the broad distribution of the switching field, Hc=280±85 Oe, as measured on a large number of individual particles. Very good quantitative correlation was found between the strength of the these defects and the switching field.

  12. 25–34 GHz Single-Pole, Double-Throw CMOS Switches for a Ka-Band Phased-Array Transceiver

    Directory of Open Access Journals (Sweden)

    Sangyong Park

    2018-01-01

    Full Text Available This paper presents two single-pole, double-throw (SPDT mm-wave switches for Ka-band phased-array transceivers, fabricated with a 65-nm complementary metal oxide semiconductor (CMOS process. One switch employs cross-biasing (CB control with a single supply, while the other uses dual-supply biasing (DSB control with positive and negative voltages. Negative voltages were generated internally, using a ring oscillator and a charge pump. Identical gate and body floated N-type metal oxide semiconductor field effect transistors (N-MOSFETs in a triple well were used as the switch core transistors. Inductors were used to improve the isolation between the transmitter (TX and receiver (RX, as well as insertion loss, by canceling the parasitic capacitance of the switch core transistors at resonance. The size of the proposed radio frequency (RF switch is 260 μm × 230 μm, excluding all pads. The minimum insertion losses of the CB and DSB switches were 2.1 dB at 28 GHz and 1.93 dB at 24 GHz, respectively. Between 25 GHz and 34 GHz, the insertion losses were less than 2.3 dB and 2.5 dB, the return losses were less than 16.7 dB and 17.3 dB, and the isolation was over 18.4 dB and 15.3 dB, respectively. The third order input intercept points (IIP3 of the CB and DSB switches were 38.4 dBm and 39 dBm at 28 GHz, respectively.

  13. A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

    OpenAIRE

    Ikeda, Hiroya; Salleh, Faiz

    2011-01-01

    We propose a novel single-electron refrigerator (SER) that can be fabricated from semiconductor materials such as a silicon-on-insulator wafer. The SER consists of a single-electron box and a single-electron pump (SEP). An equivalent circuit of the SEP refrigerator was derived. Its stability diagram (Coulomb diamond) was theoretically calculated and found to have a distorted honeycomb structure. In addition, a Monte Carlo simulation based on the orthodox theory for the Coulomb blockade phenom...

  14. A Single Molecule Study of Two Bacteriophage Epigenetic Switches

    Science.gov (United States)

    Wang, Haowei

    Epigenetic switches allow organisms to evolve into different states by activating/repressing different sets of genes without mutations of the underlying DNA sequence. The study of epigenetic switches is very important to understand the mechanism of human development, the origin of cancer, mental illness and fundamental processes such as gene regulation. The coliphage lambda epigenetic switch, which allows switching from lysogeny to lysis, has been studied for more than 50 years as a paradigm, and has recently received renewed attention. Atomic force microscopy (AFM) was used here to show that the lambda repressor oligomerizes on DNA, primarily as a dodecamer, to secure a DNA loop, which is the basis of the lambda switch. This study also provides support for the idea that specifically bound repressor stabilizes adjacent, non-specifically bound repressor molecules, which confers robustness to the switch. 186 is a member of a different coliphage family. One of the major differences between the two coliphage families is that lambda phages can be induced to switch from the lysogenic to the lytic state by UV radiation, but most coliphages of P2 family, to which 186 belongs, cannot. Interaction between coliphage 186 repressor and DNA is characterized by AFM and tethered particle motion (TPM). To expedite analysis of the AFM data, MatLab codes were written to automate the laborious, manual tracing procedures. The programs automatically recognize DNA segments and protein particles in an image, in order to measure the DNA length and position of bound particles as well as their height, diameter and volume. Application of these algorithms greatly improved the efficiency of AFM analysis. It was showed that 186 CI dimers form heptameric wheels, which induce DNA wrapping and different kinds of DNA looping producing various conformations of nucleoprotein complexes. Information about the dynamics of DNA wrapping and looping on 186 CI particles was also obtained by TPM.

  15. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  16. A Novel Single Switch Transformerless Quadratic DC/DC Buck-Boost Converter

    DEFF Research Database (Denmark)

    Mostaan, Ali; A. Gorji, Saman; N. Soltani, Mohsen

    2017-01-01

    A novel quadratic buck-boost DC/DC converter is presented in this study. The proposed converter utilizes only one active switch and can step-up/down the input voltage, while the existing single switch quadratic buck/boost converters can only work in step-up or step-down mode. First, the proposed ...

  17. Single-Mask Fabrication of Temperature Triggered MEMS Switch for Cooling Control in SSL System

    NARCIS (Netherlands)

    Wei, J.; Ye, H.; Van Zeijl, H.W.; Sarro, P.M.; Zhang, G.Q.

    2012-01-01

    A micro-electro-mechanical-system (MEMS) based, temperature triggered, switch is developed as a cost-effective solution for smart cooling control of solid-state-lighting systems. The switch (1.0x0.4 mm2) is embedded in a silicon substrate and fabricated with a single-mask 3D micro-machining process.

  18. Passive Fe2+ : ZnSe single-crystal Q switch for 3-mu m lasers

    NARCIS (Netherlands)

    Voronov, AA; Kozlovskii, [No Value; Korostelin, YV; Podmar'kov, YP; Polushkin, VG; Frolov, MP

    Passive Q-switching of 3-mu m lasers with the help of a Fe2+ : ZnSe single crystal is demonstrated. The 6-mJ, 50-ns giant pulses are obtained from a 2.9364-mu m Er : YAG laser by using this passive Q switch.

  19. Ultrafast Single and Multiexciton Energy Transfer in Semiconductor Nanoplatelets

    Science.gov (United States)

    Schaller, Richard

    Photophysical processes such as fluorescence resonance energy transfer (FRET) enable optical antennas, wavelength down-conversion in light-emitting diodes (LEDs), and optical bio-sensing schemes. The rate and efficiency of this donor to acceptor transfer of excitation between chromophores dictates the utility of FRET and can unlock new device operation motifs including quantum-funnel solar cells and reduced gain thresholds. However, the fastest reported FRET time constants involving spherical quantum dots (QDs) (0.12-1 ns), do not outpace biexciton Auger recombination (0.01-0.1 ns), which impedes multiexciton-driven applications including electrically-pumped lasers and carrier-multiplication-enhanced photovoltaics. Precisely controlled, few-monolayer thick semiconductor nano-platelets with tens-of-nanometer diameters exhibit intense optical transitions and hundreds-of-picosecond Auger recombination, but heretofore lack FRET characterizations. We examine binary CdSe NPL solids and show that inter-plate FRET (~6-23 ps, presumably for co-facial arrangements) can occur 15-50 times faster than Auger recombination and demonstrate multiexcitonic FRET, making such materials ideal candidates for advanced technologies. This work was performed at the Center for Nanoscale Materials, a U.S. Department of Energy Office of Science User Facility under Contract No. DE-AC02-06CH11357.

  20. Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.Y., E-mail: shouyu.wang@yahoo.com [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Guo, F.; Wang, X. [College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China); Liu, W.F., E-mail: wfliu@tju.edu.cn [Department of Applied Physics, Faculty of Science, Tianjin University, Weijin Road, Nankai District, Tianjin 300072 (China); Gao, J., E-mail: jugao@hku.hk [Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-11-30

    Highlights: • Bistable or tristable electrically conducting state is observed. • Coefficient can be tuned in situ by modulating carrier's density. • The RS effects may be of significance for multi-source controlled memory devices. - Abstract: Resistive switching (RS) effects based on a correlation between ferroelectric polarization and conductivity might become of particular interest for nonvolatile memory applications, because they are not subjected to the scaling restrictions. Here we report on RS behaviors modulated by a reversal of ferroelectric polarization in heterostructures comprising of a ferroelectric layer and a semiconducting manganite film. It is found that electrically conducting state is bistable or even tristable; and via the polarization flipping, a maximum resistive switching coefficient (R{sub max}/R{sub min}) is found to be larger than 3000 with bias of 6 V in Ag/BaTiO{sub 3}/La{sub 0.8}Ca{sub 0.2}MnO{sub 3} at room temperature. More importantly, employing field-effect structure with ferroelectric PMN-PT as substrate, we found that the resistive switching behaviors can be tuned in situ by modulating the concentration of carriers in the semiconducting manganite layer. Possible mechanisms are discussed on the basis of the interplay of bound ferroelectric charges, charged defects in ferroelectric layer and mobile carriers in manganite thin films. The giant RS effects observed here may be of significance for memory devices by combing electronic conduction with magnetic, spintronic, and optical functionalities.

  1. Structural Controllability of Temporal Networks with a Single Switching Controller

    Science.gov (United States)

    Yao, Peng; Hou, Bao-Yu; Pan, Yu-Jian; Li, Xiang

    2017-01-01

    Temporal network, whose topology evolves with time, is an important class of complex networks. Temporal trees of a temporal network describe the necessary edges sustaining the network as well as their active time points. By a switching controller which properly selects its location with time, temporal trees are used to improve the controllability of the network. Therefore, more nodes are controlled within the limited time. Several switching strategies to efficiently select the location of the controller are designed, which are verified with synthetic and empirical temporal networks to achieve better control performance. PMID:28107538

  2. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  3. High spatial resolution spectroscopy of single semiconductor nanostructures

    Science.gov (United States)

    Harris, T. D.; Gershoni, D.; Pfeiffer, L.; Nirmal, M.; Trautman, J. K.; Macklin, J. J.

    1996-11-01

    Low-temperature near-field scanning optical microscopy is used for the first time in spectroscopic studies of single, nanometre dimension, cleaved edge overgrown quantum wires. A direct experimental comparison between a two-dimensional system and a single genuinely one-dimensional quantum wire system, inaccessible to conventional far-field optical spectroscopy, is enabled by the enhanced spatial resolution. We show that the photoluminescence of a single quantum wire is easily distinguished from that of the surrounding quantum well. Emission from localized centres is shown to dominate the photoluminescence from both wires and wells at low temperatures. A factor of three oscillator strength enhancement for these wires compared with the wells is concluded from the photoluminescence excitation data. We also report room-temperature spectroscopy and dynamics of single CdSe nanocrystals. Photochemistry, trap dynamics and spectroscopy are easily determined.

  4. Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction.

    Science.gov (United States)

    Bi, Hai; Palma, Carlos-Andres; Gong, Yuxiang; Hasch, Peter; Elbing, Mark; Mayor, Marcel; Reichert, Joachim; Barth, Johannes V

    2018-04-11

    Precisely controlling well-defined, stable single-molecule junctions represents a pillar of single-molecule electronics. Early attempts to establish computing with molecular switching arrays were partly challenged by limitations in the direct chemical characterization of metal-molecule-metal junctions. While cryogenic scanning probe studies have advanced the mechanistic understanding of current- and voltage-induced conformational switching, metal-molecule-metal conformations are still largely inferred from indirect evidence. Hence, the development of robust, chemically sensitive techniques is instrumental for advancement in the field. Here we probe the conformation of a two-state molecular switch with vibrational spectroscopy, while simultaneously operating it by means of the applied voltage. Our study emphasizes measurements of single-molecule Raman spectra in a room-temperature stable single-molecule switch presenting a signal modulation of nearly 2 orders of magnitude.

  5. Spin and charge transport study in single crystal organic semiconductors

    Science.gov (United States)

    Raman, Karthik V.; Mulder, Carlijn L.; Baldo, Marc A.; Moodera, Jagadeesh S.

    2009-03-01

    Spin transport studies in amorphous rubrene films have shown exciting and promising results [1]. A large spin diffusion length in these amorphous films has increased the motivation to perform spin transport study in high purity single crystal rubrene. This will provide the fundamental understanding on the spin transport behavior in OS; not influenced by defects or traps. We will present work on small channel single crystal rubrene FET device with magnetic electrodes. For example, our preliminary studies have show mobility for FET with Co electrode to be 0.014cm^2/V-s. A study on the spin and charge transport properties in single crystals of OS with magnetic electrodes is being done and the results will be reported. The influence of gate voltage and applied magnetic field on the transport properties will be discussed. [1] J.H. Shim et al., PRL 100, 226603 (2008)

  6. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...

  7. Controlled switching of single-molecule junctions by mechanical motion of a phenyl ring

    Directory of Open Access Journals (Sweden)

    Yuya Kitaguchi

    2015-10-01

    Full Text Available Mechanical methods for single-molecule control have potential for wide application in nanodevices and machines. Here we demonstrate the operation of a single-molecule switch made functional by the motion of a phenyl ring, analogous to the lever in a conventional toggle switch. The switch can be actuated by dual triggers, either by a voltage pulse or by displacement of the electrode, and electronic manipulation of the ring by chemical substitution enables rational control of the on-state conductance. Owing to its simple mechanics, structural robustness, and chemical accessibility, we propose that phenyl rings are promising components in mechanical molecular devices.

  8. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  9. A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

    Science.gov (United States)

    Ikeda, Hiroya; Salleh, Faiz

    2011-06-01

    We propose a novel single-electron refrigerator (SER) that can be fabricated from semiconductor materials such as a silicon-on-insulator wafer. The SER consists of a single-electron box and a single-electron pump (SEP). An equivalent circuit of the SEP refrigerator was derived. Its stability diagram (Coulomb diamond) was theoretically calculated and found to have a distorted honeycomb structure. In addition, a Monte Carlo simulation based on the orthodox theory for the Coulomb blockade phenomenon predicts successful single-electron extraction and injection.

  10. Single-Molecule Rotational Switch on a Dangling Bond Dimer Bearing.

    Science.gov (United States)

    Godlewski, Szymon; Kawai, Hiroyo; Kolmer, Marek; Zuzak, Rafał; Echavarren, Antonio M; Joachim, Christian; Szymonski, Marek; Saeys, Mark

    2016-09-27

    One of the key challenges in the construction of atomic-scale circuits and molecular machines is to design molecular rotors and switches by controlling the linear or rotational movement of a molecule while preserving its intrinsic electronic properties. Here, we demonstrate both the continuous rotational switching and the controlled step-by-step single switching of a trinaphthylene molecule adsorbed on a dangling bond dimer created on a hydrogen-passivated Ge(001):H surface. The molecular switch is on-surface assembled when the covalent bonds between the molecule and the dangling bond dimer are controllably broken, and the molecule is attached to the dimer by long-range van der Waals interactions. In this configuration, the molecule retains its intrinsic electronic properties, as confirmed by combined scanning tunneling microscopy/spectroscopy (STM/STS) measurements, density functional theory calculations, and advanced STM image calculations. Continuous switching of the molecule is initiated by vibronic excitations when the electrons are tunneling through the lowest unoccupied molecular orbital state of the molecule. The switching path is a combination of a sliding and rotation motion over the dangling bond dimer pivot. By carefully selecting the STM conditions, control over discrete single switching events is also achieved. Combined with the ability to create dangling bond dimers with atomic precision, the controlled rotational molecular switch is expected to be a crucial building block for more complex surface atomic-scale devices.

  11. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 5.High-Repetition-Rate Marx Generator Using Thyristor Switches

    Science.gov (United States)

    Maeyama, Mitsuaki

    The Static Marx Generatoris a high-voltage impulse generator using semiconductor switches that borrow their simple trigger operation from the conventional Marx Generator. This commentary presents the principle of successive trigger operation, the high-speed and high-efficiency charging mechanism used in this Static Marx Generator circuit system, and the typical properties of the voltage amplification ratio, i.e. the rise time and charging efficiency.

  12. Radiation damage in dielectric and semiconductor single crystals (direct observation)

    CERN Document Server

    Adawi, M A; Varichenko, V S; Zaitsev, A M

    1998-01-01

    The surfaces of boron-doped synthetic and natural diamonds have been investigated by using the scanning tunnelling microscope (STM) and the scanning electronic microscope (SEM) before and after irradiating the samples with sup 4 sup 0 Ar (25 MeV), sup 8 sup 4 Kr (210 MeV) and sup 1 sup 2 sup 5 Xe (124 MeV) ions. The structures observed after irradiation showed craters with diameters ranging from 3 nm up to 20 nm, which could be interpreted as single ion tracks and multiple hits of ions at the nearest positions of the surface. In the case of argon ion irradiation, the surface was found to be completely amorphous, but after xenon irradiation one could see parts of surface without amorphism. This can be explained by the influence of high inelastic energy losses. The energy and temperature criteria of crater formation as a result of heavy ion irradiation are introduced.

  13. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  14. Molecular electronics: the single molecule switch and transistor

    NARCIS (Netherlands)

    Sotthewes, Kai; Geskin, Victor; Heimbuch, Rene; Kumar, Avijit; Zandvliet, Henricus J.W.

    2014-01-01

    In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected

  15. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

    2017-09-13

    The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

  16. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying

    2013-06-02

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control of thin-film morphology. Here, we report an approach - termed fluid-enhanced crystal engineering (FLUENCE) - that allows for a high degree of morphological control of solution-printed thin films. We designed a micropillar-patterned printing blade to induce recirculation in the ink for enhancing crystal growth, and engineered the curvature of the ink meniscus to control crystal nucleation. Using FLUENCE, we demonstrate the fast coating and patterning of millimetre-wide, centimetre-long, highly aligned single-crystalline organic semiconductor thin films. In particular, we fabricated thin films of 6,13-bis(triisopropylsilylethynyl) pentacene having non-equilibrium single-crystalline domains and an unprecedented average and maximum mobilities of 8.1±1.2 cm2 V-1 s -1 and 11 cm2 V-1 s-1. FLUENCE of organic semiconductors with non-equilibrium single-crystalline domains may find use in the fabrication of high-performance, large-area printed electronics. © 2013 Macmillan Publishers Limited. All rights reserved.

  17. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  18. Ultrafast Switching Superjunction MOSFETs for Single Phase PFC Applications

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive...... investigates the latest SJ devices in order to set a reference for future research on improvement over silicon (Si) attained with the introduction of wide bandgap devices in single phase PFC applications. The obtained results show that the latest generation of SJ devices set a new benchmark for its wide...

  19. Soft-Switched Neutral-Point-Clamped Single-Phase Boost Rectifier

    Science.gov (United States)

    Itoh, Ryozo; Ishizaka, Kouichi

    A soft-switched neutral-point-clamped single-phase boost rectifier capable of compensating the imbalance load voltage is studied. This is based on a single-phase rectifier, in which an inductor is placed in series with the AC supply to resonate with a capacitor connected across the DC output of a full-bridge rectifier and the switching transition is mainly governed by a series resonance. The experimental prototype using insulated-gate bipolar transistors is implemented to investigate the operation under the charge control. The experimental results confirm that the rectifier has a neutral-point-clamp feature providing a good quality AC current.

  20. Quantifying and optimizing single-molecule switching nanoscopy at high speeds.

    Directory of Open Access Journals (Sweden)

    Yu Lin

    Full Text Available Single-molecule switching nanoscopy overcomes the diffraction limit of light by stochastically switching single fluorescent molecules on and off, and then localizing their positions individually. Recent advances in this technique have greatly accelerated the data acquisition speed and improved the temporal resolution of super-resolution imaging. However, it has not been quantified whether this speed increase comes at the cost of compromised image quality. The spatial and temporal resolution depends on many factors, among which laser intensity and camera speed are the two most critical parameters. Here we quantitatively compare the image quality achieved when imaging Alexa Fluor 647-immunolabeled microtubules over an extended range of laser intensities and camera speeds using three criteria - localization precision, density of localized molecules, and resolution of reconstructed images based on Fourier Ring Correlation. We found that, with optimized parameters, single-molecule switching nanoscopy at high speeds can achieve the same image quality as imaging at conventional speeds in a 5-25 times shorter time period. Furthermore, we measured the photoswitching kinetics of Alexa Fluor 647 from single-molecule experiments, and, based on this kinetic data, we developed algorithms to simulate single-molecule switching nanoscopy images. We used this software tool to demonstrate how laser intensity and camera speed affect the density of active fluorophores and influence the achievable resolution. Our study provides guidelines for choosing appropriate laser intensities for imaging Alexa Fluor 647 at different speeds and a quantification protocol for future evaluations of other probes and imaging parameters.

  1. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2004-01-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...

  2. Flux Concentration and Pole Shaping in a Single Phase Hybrid Switched Reluctance Motor Drive

    DEFF Research Database (Denmark)

    Jakobsen, Uffe; Lu, Kaiyuan

    2010-01-01

    The single phase hybrid switched reluctance motor (HSRM) may be a good candidate for low-cost drives used for pump applications. This paper presents a new design of the HSRM with improved starting torque achieved by stator pole shaping, and a better arrangement of the embedded stator permanent...

  3. High step-up isolated efficient single switch DC-DC converter for renewable energy source

    Directory of Open Access Journals (Sweden)

    A. Gopi

    2014-12-01

    Full Text Available In this paper, an isolated high step-up single switch DC-DC converter for renewable energy source is proposed. In the proposed converter high step-up voltage is obtained by single power switching technique that operates low duty cycle with isolated transformer inductors and switched capacitors and power diodes. The disadvantage of conventional converters is that it has high duty ratio and high voltage stress on power devices with less efficiency. The proposed converter eliminates the switching losses and recycles the leakage energy which includes reverse recovery energy of the power diode by using passive clamp circuit. To achieve high output voltage gain, the isolated transformer primary terminal and secondary terminal are connected in series during switching operation. PSIM software has been used for simulation. Simulation circuit is analyzed at 40Vdc/400Vdc, 200 W and this operation is validated by implementing in the hardware model at 12Vdc/120Vdc, 60 W.

  4. On-Demand Final State Control of a Surface-Bound Bistable Single Molecule Switch.

    Science.gov (United States)

    Garrido Torres, José A; Simpson, Grant J; Adams, Christopher J; Früchtl, Herbert A; Schaub, Renald

    2018-04-12

    Modern electronic devices perform their defined action because of the complete reliability of their individual active components (transistors, switches, diodes, and so forth). For instance, to encode basic computer units (bits) an electrical switch can be used. The reliability of the switch ensures that the desired outcome (the component's final state, 0 or 1) can be selected with certainty. No practical data storage device would otherwise exist. This reliability criterion will necessarily need to hold true for future molecular electronics to have the opportunity to emerge as a viable miniaturization alternative to our current silicon-based technology. Molecular electronics target the use of single-molecules to perform the actions of individual electronic components. On-demand final state control over a bistable unimolecular component has therefore been one of the main challenges in the past decade (1-5) but has yet to be achieved. In this Letter, we demonstrate how control of the final state of a surface-supported bistable single molecule switch can be realized. On the basis of the observations and deductions presented here, we further suggest an alternative strategy to achieve final state control in unimolecular bistable switches.

  5. An empirical formula for yield estimation from singly truncated performance data of qualified semiconductor devices

    International Nuclear Information System (INIS)

    Liang Tao; Jia Xinzhang

    2012-01-01

    The problem of yield estimation merely from performance test data of qualified semiconductor devices is studied. An empirical formula is presented to calculate the yield directly by the sample mean and standard deviation of singly truncated normal samples based on the theoretical relation between process capability indices and the yield. Firstly, we compare four commonly used normality tests under different conditions, and simulation results show that the Shapiro—Wilk test is the most powerful test in recognizing singly truncated normal samples. Secondly, the maximum likelihood estimation method and the empirical formula are compared by Monte Carlo simulation. The results show that the simple empirical formulas can achieve almost the same accuracy as the maximum likelihood estimation method but with a much lower amount of calculations when estimating yield from singly truncated normal samples. In addition, the empirical formula can also be used for doubly truncated normal samples when some specific conditions are met. Practical examples of yield estimation from academic and IC test data are given to verify the effectiveness of the proposed method. (semiconductor integrated circuits)

  6. Semi-conductor switches

    International Nuclear Information System (INIS)

    1981-01-01

    Methods are described of improving certain electrical characteristics of bidirectional thyristors by selective irradiation of the boundary region between current-carrying portions of the device. Irradiation, preferably by electrons but also by neutrons, gamma radiation or protons, causes carrier lifetime reducing lattice defects. (U.K.)

  7. Dynamically Switching among Bundled and Single Tickets with Time-Dependent Demand Rates

    Directory of Open Access Journals (Sweden)

    Serhan Duran

    2012-01-01

    Full Text Available The most important market segmentation in sports and entertainment industry is the competition between customers that buy bundled and single tickets. A common selling practice is starting the selling season with bundled ticket sales and switching to selling single tickets later on. The aim of this practice is to increase the number of customers that buy bundles, which in return increases the load factor of the events with low demand. In this paper, we investigate the effect of time dependent demand on dynamic switching times from bundled to single ticket sales and the potential revenue gain over the case where the demand rate of events is assumed to be constant with time.

  8. Research Update: Molecular electronics: The single-molecule switch and transistor

    Directory of Open Access Journals (Sweden)

    Kai Sotthewes

    2014-01-01

    Full Text Available In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

  9. Single-Photon Switching and Entanglement of Solid- State Qubits in an Integrated Nanophotonic System

    Science.gov (United States)

    Evans, Ruffin; Sipahigil, Alp; Sukachev, Denis; Burek, Michael; Borregaard, Johannes; Bhaskar, Mihir; Nguyen, Christian; Pacheco, Jose; Bielejec, Edward; Loncar, Marko; Lukin, Mikhail

    2017-04-01

    Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable optical nonlinearities at the single-photon level. We demonstrate a platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to diamond nanodevices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable states and observe switching at the single-photon level. Raman transitions are used to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe quantum interference resulting from the superradiant emission of two entangled SiV centers. We also discuss current work to extend the coherence time of the SiV spin degree of freedom, engineer deterministic multi-emitter interactions via the cavity mode, and related work with the Germanium-Vacancy center.

  10. Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

    Science.gov (United States)

    Vezzoli, Andrea; Brooke, Richard J; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

    2017-11-08

    We demonstrate here a new concept for a metal-molecule-semiconductor nanodevice employing Au and GaAs contacts that acts as a photodiode. Current-voltage traces for such junctions are recorded using a STM, and the "blinking" or "I(t)" method is used to record electrical behavior at the single-molecule level in the dark and under illumination, with both low and highly doped GaAs samples and with two different types of molecular bridge: nonconjugated pentanedithiol and the more conjugated 1,4-phenylene(dimethanethiol). Junctions with highly doped GaAs show poor rectification in the dark and a low photocurrent, while junctions with low doped GaAs show particularly high rectification ratios in the dark (>10 3 for a 1.5 V bias potential) and a high photocurrent in reverse bias. In low doped GaAs, the greater thickness of the depletion layer not only reduces the reverse bias leakage current, but also increases the volume that contributes to the photocurrent, an effect amplified by the point contact geometry of the junction. Furthermore, since photogenerated holes tunnel to the metal electrode assisted by the HOMO of the molecular bridge, the choice of the latter has a strong influence on both the steady state and transient metal-molecule-semiconductor photodiode response. The control of junction current via photogenerated charge carriers adds new functionality to single-molecule nanodevices.

  11. Advanced single-wafer sequential multiprocessing techniques for semiconductor device fabrication

    International Nuclear Information System (INIS)

    Moslehi, M.M.; Davis, C.

    1989-01-01

    Single-wafer integrated in-situ multiprocessing (SWIM) is recognized as the future trend for advanced microelectronics production in flexible fast turn- around computer-integrated semiconductor manufacturing environments. The SWIM equipment technology and processing methodology offer enhanced equipment utilization, improved process reproducibility and yield, and reduced chip manufacturing cost. They also provide significant capabilities for fabrication of new and improved device structures. This paper describes the SWIM techniques and presents a novel single-wafer advanced vacuum multiprocessing technology developed based on the use of multiple process energy/activation sources (lamp heating and remote microwave plasma) for multilayer epitaxial and polycrystalline semiconductor as well as dielectric film processing. Based on this technology, multilayer in-situ-doped homoepitaxial silicon and heteroepitaxial strained layer Si/Ge x Si 1 - x /Si structures have been grown and characterized. The process control and the ultimate interfacial abruptness of the layer-to-layer transition widths in the device structures prepared by this technology will challenge the MBE techniques in multilayer epitaxial growth applications

  12. Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins.

    Science.gov (United States)

    Iwasaki, Takayuki; Naruki, Wataru; Tahara, Kosuke; Makino, Toshiharu; Kato, Hiromitsu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Hatano, Mutsuko

    2017-02-28

    The electric field inside semiconductor devices is a key physical parameter that determines the properties of the devices. However, techniques based on scanning probe microscopy are limited to sensing at the surface only. Here, we demonstrate the direct sensing of the internal electric field in diamond power devices using single nitrogen-vacancy (NV) centers. The NV center embedded inside the device acts as a nanoscale electric field sensor. We fabricated vertical diamond p-i-n diodes containing the single NV centers. By performing optically detected magnetic resonance measurements under reverse-biased conditions with an applied voltage of up to 150 V, we found a large splitting in the magnetic resonance frequencies. This indicated that the NV center senses the transverse electric field in the space-charge region formed in the i-layer. The experimentally obtained electric field values are in good agreement with those calculated by a device simulator. Furthermore, we demonstrate the sensing of the electric field in different directions by utilizing NV centers with different N-V axes. This direct and quantitative sensing method using an electron spin in a wide-band-gap material provides a way to monitor the electric field in operating semiconductor devices.

  13. Doppler wind lidar using a MOPA semiconductor laser at stable single-frequency operation

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2009-01-01

    A compact master-oscillator power-amplifier semiconductor laser (MOPA-SL) is a good candidate for a coherent light source (operating at 1550 nm) in a Doppler wind Lidar. The MOPA-SL requires two injection currents: Idfb for the distributed-feedback (DFB) laser section (master oscillator) and Iamp...... for the tapered amplifier section. The specified maximum current values are 0.7 A and 4.0 A for Idfb and Iamp. Although the MOPA-SL has been proven capable of producing single-frequency CW output beam, stable operation at this spectral condition has also been known to highly depend on the drive currents...... to the laser. This was done by observing the spectral characteristic of the laser using an optical spectrum at different drive current combinations. When using the laser for a Doppler wind Lidar application, a combination of (Idfb, Iamp) which is close to the center of an identified stable single...

  14. Single-electron switching effect in graphene parallel-coupled double quantum dots

    Science.gov (United States)

    Arai, M.; Masubuchi, S.; Machida, T.

    2011-12-01

    We have fabricated parallel-coupled quantum dots on single-layer graphene. The tunnel coupling between the quantum dots can be tuned by a graphene in-plane gate. Owing to the tunnel coupling, the Coulomb blockade oscillation peaks exhibit periodic shifts as the number of electron in the non-conducting side-coupled QD is changed. The result suggests the observation of the single electron switching effect, which is a prerequisite for a single photon detection scheme using parallel-coupled quantum dots.

  15. Switching behavior of double-decker single molecule magnets on a metal surface

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Yingshuang; Schwoebel, Joerg; Hoffmann, Germar; Brede, Jens; Wiesendanger, Roland [University of Hamburg, Hamburg (Germany); Dillulo, Andrew [Ohio University, Athens (United States); Klyatskaya, Svetlana [Karlsruhe Institute of Technology, Karlsruhe (Germany); Ruben, Mario [Karlsruhe Institute of Technology, Karlsruhe (Germany); Universite de Strasbourg, Strasbourg (France)

    2011-07-01

    Single molecule magnets (SMM) are most promising materials for spin based molecular electronics. Due to their large magnetic anisotropy stabilized by inside chemical bonds, SMM can potentially be used for information storage at the single molecule level. For applications, it is of importance to adsorb the SMM onto surfaces and to study their subsequent conformational, electronic and magnetic properties. We have investigated the adsorption behavior of Tb and Dy based double-decker SMM on an Ir(111) surface with low temperature scanning tunneling microscopy and spectroscopy. It is found that Tb double-decker molecules bind tightly to the Ir(111) surface. By resonantly injecting tunneling electrons into its LUMO or HOMO state, the Tb double-decker molecule can be switched from a four-lobed structure to an eight-lobed structure. After switching, energy positions of the HOMO and LUMO states both shift closer to the Fermi level. Dy double-decker molecules also exhibit the same switching properties on the Ir(111) surface. The switching behavior of the molecules is tentatively attributed to a conformational change of the double-decker molecular frame.

  16. SAFETY AND EFFECTIVENESS OF SINGLE ANASTOMOSIS DUODENAL SWITCH PROCEDURE: PRELIMINARY RESULT FROM A SINGLE INSTITUTION.

    Science.gov (United States)

    Nelson, Lars; Moon, Rena C; Teixeira, Andre F; Galvão, Manoel; Ramos, Almino; Jawad, Muhammad A

    Single anastomosis duodeno-ileal bypass with sleeve gastrectomy (SADI-S) was introduced into bariatric surgery by Sanchez-Pernaute et al. as an advancement of the biliopancreatic diversion with duodenal switch. To evaluate the SADI-S procedure with regard to weight loss, comorbidity resolution, and complication rate in the super obese population. A retrospective chart review was performed on initial 72 patients who underwent laparoscopic or robot-assisted laparoscopic SADI-S between December 17th, 2013 and July 29th, 2015. A total of 48 female and 21 male patients were included with a mean age of 42.4±10.0 years (range, 22-67). The mean body mass index (BMI) at the time of procedure was 58.4±8.3 kg/m2 (range, 42.3-91.8). Mean length of hospital stay was 4.3±2.6 days (range, 3-24). Thirty-day readmission rate was 4.3% (n=3), due to tachycardia (n=1), deep venous thrombosis (n=1), and viral gastroenteritis (n=1). Thirty-day reoperation rate was 5.8% (n=4) for perforation of the small bowel (n=1), leakage (n=1), duodenal stump leakage (n=1), and diagnostic laparoscopy (n=1). Percentage of excess weight loss (%EWL) was 28.5±8.8 % (range, 13.3-45.0) at three months (n=28), 41.7±11.1 % (range, 19.6-69.6) at six months (n=50), and 61.6±12.0 % (range, 40.1-91.2) at 12 months (n=23) after the procedure. A total of 18 patients (26.1%) presented with type II diabetes mellitus at the time of surgery. Of these patients, 9 (50.0%) had their diabetes resolved, and six (33.3%) had it improved by 6-12 months after SADI-S. SADI-S is a feasible operation with a promising weight loss and diabetes resolution in the super-obese population. Anastomose única em bypass duodenoileal com gastrectomia vertical (SADI-S) foi introduzida na cirurgia bariátrica por Sanchez-Pernaute et al. como um avanço da derivação biliopancreática com switch duodenal. Avaliar o procedimento SADI-S no que diz respeito à perda de peso, resolução de comorbidades e taxa de complicações na popula

  17. On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.

    Science.gov (United States)

    Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

    2017-09-13

    Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.

  18. Design methodology for a special single winding based bearingless switched reluctance motor

    Directory of Open Access Journals (Sweden)

    Madhurjya Dev Choudhury

    2017-06-01

    Full Text Available Bearingless switched reluctance motors (BSRMs have both magnetic bearing as well as conventional motor characteristics which make them suitable for diverse industrial applications. This study proposes a design methodology for a BSRM in order to calculate the appropriate geometrical dimensions essential for realising a minimum levitation force at every orientation of rotor. It is based on the stator–rotor overlap angle and helps in reducing the complexities associated with the self-bearing operation of a switched reluctance motor (SRM. Different from a conventional SRM, the motor under study deploys a special single set parallel winding scheme for simultaneous production of torque as well as radial force. An analytical model incorporating this single set winding is developed for calculating the torque and the radial force. The proposed bearingless design is verified by developing a two-dimensional finite-element model of a 12/8 SRM in ANSYS Maxwell.

  19. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  20. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  1. Diode-end-pumped single-longitudinal-mode passively Q-switched Nd:GGG laser

    Science.gov (United States)

    Xue, Feng; Zhang, Sasa; Cong, Zhenhua; Huang, Qingjie; Guan, Chen; Wu, Qianwen; Chen, Hui; Bai, Fen; Liu, Zhaojun

    2018-03-01

    Diode-end-pumped passively Q-switched Nd:GGG laser in a ring cavity at 1062 nm was demonstrated. Single-longitudinal-mode laser linewidth less than 0.5 pm was accomplished by unidirectional operation. The maximum output pulse energy was 437 µJ and the pulse width was 43 ns when Cr4+:YAG with an initial transmission of 61% was used.

  2. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

  3. Advanteges of using Two-Switch Forward in Single-Stage Power Factor Corrected Power Supplies

    DEFF Research Database (Denmark)

    Petersen, Lars

    2000-01-01

    A single-Stage power factor corrected power supply using a two-switch forward is proposed to increase efficiency. The converter is operated in the DCM (Discontinues Conduction Mode). This will insure the intermediate DC-bus to be controlled only by means of circuit parameters and therefore...... power supply has been implemented. The measured efficiency and power factor are about 87% and 0.96 respectively....

  4. Adaptive Morse-coded single-switch communication system for the disabled.

    Science.gov (United States)

    Luo, C H; Shih, C H

    1996-04-01

    Automatic recognition of Morse-code is generally developed at a fixed typing rate. However, this is not suitable for the disabled due to their difficulty in maintaining a stable typing rate. In this paper, a system recognizing varying typing speeds is developed using an adaptive technique, the Least-Mean Square (LMS) algorithm. This system helps the disabled have a wide latitude and varying typing speeds in single-switch communication with the Morse-code.

  5. Switching VO2 Single Crystals and Related Phenomena: Sliding Domains and Crack Formation

    Directory of Open Access Journals (Sweden)

    Bertina Fisher

    2017-05-01

    Full Text Available VO2 is the prototype material for insulator–metal transition (IMT. Its transition at TIMT = 340 K is fast and consists of a large resistance jump (up to approximately five orders of magnitude, a large change in its optical properties in the visible range, and symmetry change from monoclinic to tetragonal (expansion by 1% along the tetragonal c-axis and 0.5% contraction in the perpendicular direction. It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. Static or dynamic domain patterns in the mixed-state of self-heated single crystals during electric-field induced switching are in strong contrast with the percolative nature of the mixed state in switching VO2 films. The most impressive effect—so far unique to VO2—is the sliding of narrow semiconducting domains within a metallic background in the positive sense of the electric current. Here we show images from videos obtained using optical microscopy for sliding domains along VO2 needles and confirm a relation suggested in the past for their velocity. We also show images for the disturbing damage induced by the structural changes in switching VO2 crystals obtained for only a few current–voltage cycles.

  6. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Directory of Open Access Journals (Sweden)

    Shougui Ning

    2018-02-01

    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  7. Semiconductor optical amplifier pattern effect suppression with passive single microring resonator-based notch filter

    Science.gov (United States)

    Rizou, Z. V.; Zoiros, K. E.; Hatziefremidis, A.

    2014-10-01

    We propose to employ a passive single microring resonator (MRR) to suppress the pattern effect in a semiconductor optical amplifier (SOA). We specify the necessary conditions that must hold in order for the MRR to act as notch filter and compensate for the uneven spectral broadening of the amplified data pulses. This procedure allows us to find the permissible range of values of the MRR radius and suitably select this parameter so that the defined design criteria are satisfied and the employed figure-of-merits are acceptable. If designed and constructed as suggested, which is feasible with state-of-the-art technology, the MRR-based notch filter enables to significantly improve the pattern-dependent SOA performance and the quality characteristics of the amplified signal.

  8. Demultiplexing of OTDM-DPSK signals based on a single semiconductor optical amplifier and optical filtering

    DEFF Research Database (Denmark)

    Xu, Jing; Ding, Yunhong; Peucheret, Christophe

    2011-01-01

    We propose and demonstrate the use of a single semiconductor optical amplifier (SOA) and optical filtering to time demultiplex tributaries from an optical time division multiplexing-differential phase shift keying (OTDM-DPSK) signal. The scheme takes advantage of the fact that phase variations...... added to the target channel by cross-phase modulation from the control signal are effectively subtracted in the differential demodulation scheme employed for DPSK signals. Demultiplexing from 80 to 40 Gbit=s is demonstrated with moderate power penalty using an SOA with recovery time twice as long...... as the bit period at 80 Gbit=s. Large dynamic ranges for the input power and SOA current are experimentally demonstrated. The scheme is expected to be scalable toward higher bit rates. © 2011 Optical Society of America....

  9. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  10. Temperature induced Spin Switching in SmFeO3 Single Crystal

    Science.gov (United States)

    Cao, Shixun; Zhao, Huazhi; Kang, Baojuan; Zhang, Jincang; Ren, Wei

    2014-08-01

    The prospect of controlling the magnetization (M) of a material is of great importance from the viewpoints of fundamental physics and future applications of emerging spintronics. A class of rare-earth orthoferrites RFeO3 (R is rare-earth element) materials exhibit striking physical properties of spin switching and magnetization reversal induced by temperature and/or applied magnetic field. Furthermore, due to the novel magnetic, magneto-optic and multiferroic properties etc., RFeO3 materials are attracting more and more interests in recent years. We have prepared and investigated a prototype of RFeO3 materials, namely SmFeO3 single-crystal. And we report magnetic measurements upon both field cooling (FC) and zero-field cooling (ZFC) of the sample, as a function of temperature and applied magnetic field. The central findings of this study include that the magnetization of single-crystal SmFeO3 can be switched by temperature, and tuning the magnitude of applied magnetic field allows us to realize such spin switching even at room temperature.

  11. Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

    Science.gov (United States)

    Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

    2017-08-11

    Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

  12. Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

    Science.gov (United States)

    Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

    2017-08-01

    Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

  13. Stereoelectronic Effect-Induced Conductance Switching in Aromatic Chain Single-Molecule Junctions.

    Science.gov (United States)

    Xin, Na; Wang, Jinying; Jia, Chuancheng; Liu, Zitong; Zhang, Xisha; Yu, Chenmin; Li, Mingliang; Wang, Shuopei; Gong, Yao; Sun, Hantao; Zhang, Guanxin; Liu, Zhirong; Zhang, Guangyu; Liao, Jianhui; Zhang, Deqing; Guo, Xuefeng

    2017-02-08

    Biphenyl, as the elementary unit of organic functional materials, has been widely used in electronic and optoelectronic devices. However, over decades little has been fundamentally understood regarding how the intramolecular conformation of biphenyl dynamically affects its transport properties at the single-molecule level. Here, we establish the stereoelectronic effect of biphenyl on its electrical conductance based on the platform of graphene-molecule single-molecule junctions, where a specifically designed hexaphenyl aromatic chain molecule is covalently sandwiched between nanogapped graphene point contacts to create stable single-molecule junctions. Both theoretical and temperature-dependent experimental results consistently demonstrate that phenyl twisting in the aromatic chain molecule produces different microstates with different degrees of conjugation, thus leading to stochastic switching between high- and low-conductance states. These investigations offer new molecular design insights into building functional single-molecule electrical devices.

  14. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  15. Lower Side Switching Modification of SHEPWM for Single H-Bridge Unipolar Inverter

    Science.gov (United States)

    Aihsan, M. Z.

    2018-03-01

    Selective Harmonic Elimination Pulse Width Modulation (SHEPWM) is a famous fundamental frequency method for both single stage H-bridge inverter and cascaded multilevel inverters. The main function of SHEPWM is to eliminate the selective lower order of odd harmonic such 3rd, 5th 7th and 9th of the output voltage of the inverter but maintain the fundamental component. In this paper, the 5kHz of the unipolar SHEPWM switching scheme of the inverter is developed and later will be compared to the modified SHEPWM switching scheme. The performance of this inverter is measured through the final total harmonic distortion (THD), the efficiency of the whole system and the natural shape of the output after LC filter.

  16. Computer controlled data measurement and analysis system used for measuring switching parameters of semiconductors. [Employs HP 2114B minicomputer; reports contain all applicable coding in assembly language

    Energy Technology Data Exchange (ETDEWEB)

    Culp, C.H.; Eckels, D.E.

    1976-01-01

    A computer-controlled data acquisition system which was employed to measure the threshold switching parameters of amorphous semiconductors is described. This system is capable of measuring the delay time required for a sample to switch, the electrical energy put into a sample and the charge passing through it during the delay time, and its ambient temperature. With this equipment an experimenter is able to control the magnitude and maximum duration of the voltage applied to a sample, the time interval between applications of voltage, and the load resistor in series with a sample. An HP 2114B minicomputer provides control and analysis capabilities for this system. Basically, this apparatus is a constant voltage pulse generator and signal processor. Major modules of this system are a transistorized high voltage switch, a digitally controlled high voltage resistor and power supply, a low-thermal-noise input-scanner, a precision timer, and two analog integrators. The amplitude of a voltage pulse can be varied from 0V to 1 kV and the maximum duration can be varied from 10 ..mu..s to 300 s. During the voltage pulse, a signal which represents the current through a sample is processed by analog integrators and signal multipliers. If the sample switches to a low-resistance state during a voltage pulse, this equipment automatically detects the event and removes the voltage from the sample to prevent sample deterioration. Following the voltage pulse, a teletypewriter prints the raw data from the integrators, power supply, and timer and the calculated values of the charge and energy input. 44 figures, 2 tables. (auth)

  17. Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2012-01-01

    We investigate the self-phase modulation (SPM) of a single-cycle terahertz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the terahertz pulse, leading to an ultrafast reduction of the plasma frequency...

  18. Single Longitudinal Mode, High Repetition Rate, Q-switched Ho:YLF Laser for Remote Sensing

    Science.gov (United States)

    Bai, Yingxin; Yu, Jirong; Petzar, Paul; Petros, M.; Chen, Songsheng; Trieu, Bo; Lee, Nyung; Singh, U.

    2009-01-01

    Ho:YLF/LuLiF lasers have specific applications for remote sensing such as wind-speed measurement and carbon dioxide (CO2) concentration measurement in the atmosphere because the operating wavelength (around 2 m) is located in the eye-safe range and can be tuned to the characteristic lines of CO2 absorption and there is strong backward scattering signal from aerosol (Mie scattering). Experimentally, a diode pumped Ho:Tm:YLF laser has been successfully used as the transmitter of coherent differential absorption lidar for the measurement of with a repetition rate of 5 Hz and pulse energy of 75 mJ [1]. For highly precise CO2 measurements with coherent detection technique, a laser with high repetition rate is required to averaging out the speckle effect [2]. In addition, laser efficiency is critically important for the air/space borne lidar applications, because of the limited power supply. A diode pumped Ho:Tm:YLF laser is difficult to efficiently operate in high repetition rate due to the large heat loading and up-conversion. However, a Tm:fiber laser pumped Ho:YLF laser with low heat loading can be operated at high repetition rates efficiently [3]. No matter whether wind-speed or carbon dioxide (CO2) concentration measurement is the goal, a Ho:YLF/LuLiF laser as the transmitter should operate in a single longitudinal mode. Injection seeding is a valid technique for a Q-switched laser to obtain single longitudinal mode operation. In this paper, we will report the new results for a single longitudinal mode, high repetition rate, Q-switched Ho:YLF laser. In order to avoid spectral hole burning and make injection seeding easier, a four mirror ring cavity is designed for single longitudinal mode, high repetition rate Q-switched Ho:YLF laser. The ramp-fire technique is chosen for injection seeding.

  19. Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells

    Science.gov (United States)

    Ray, Biswajit; Baradwaj, Aditya G.; Khan, Mohammad Ryyan; Boudouris, Bryan W.; Alam, Muhammad Ashraful

    2015-01-01

    The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials. PMID:26290582

  20. Collection-limited theory interprets the extraordinary response of single semiconductor organic solar cells.

    Science.gov (United States)

    Ray, Biswajit; Baradwaj, Aditya G; Khan, Mohammad Ryyan; Boudouris, Bryan W; Alam, Muhammad Ashraful

    2015-09-08

    The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and therefore, would allow the use of broader range of organic semiconductors. Unfortunately, the photocurrent in standard SS-OPV devices is typically very low, which generally is attributed to inefficient charge separation of the photogenerated excitons. Here we show that the short-circuit current density from SS-OPV devices can be enhanced significantly (∼100-fold) through the use of inverted device configurations, relative to a standard OPV device architecture. This result suggests that charge generation may not be the performance bottleneck in OPV device operation. Instead, poor charge collection, caused by defect-induced electric field screening, is most likely the primary performance bottleneck in regular-geometry SS-OPV cells. We justify this hypothesis by: (i) detailed numerical simulations, (ii) electrical characterization experiments of functional SS-OPV devices using multiple polymers as active layer materials, and (iii) impedance spectroscopy measurements. Furthermore, we show that the collection-limited photocurrent theory consistently interprets typical characteristics of regular SS-OPV devices. These insights should encourage the design and OPV implementation of high-purity, high-mobility polymers, and other soft materials that have shown promise in organic field-effect transistor applications, but have not performed well in BHJ OPV devices, wherein they adopt less-than-ideal nanostructures when blended with electron-accepting materials.

  1. Far-field nanoscopy on a semiconductor quantum dot via a rapid-adiabatic-passage-based switch

    Science.gov (United States)

    Kaldewey, Timo; Kuhlmann, Andreas V.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.; Warburton, Richard J.

    2018-02-01

    The diffraction limit prevents a conventional optical microscope from imaging at the nanoscale. However, nanoscale imaging of molecules is possible by exploiting an intensity-dependent molecular switch1-3. This switch is translated into a microscopy scheme, stimulated emission depletion microscopy4-7. Variants on this scheme exist3,8-13, yet all exploit an incoherent response to the lasers. We present a scheme that relies on a coherent response to a laser. Quantum control of a two-level system proceeds via rapid adiabatic passage, an ideal molecular switch. We implement this scheme on an ensemble of quantum dots. Each quantum dot results in a bright spot in the image with extent down to 30 nm (λ/31). There is no significant loss of intensity with respect to confocal microscopy, resulting in a factor of 10 improvement in emitter position determination. The experiments establish rapid adiabatic passage as a versatile tool in the super-resolution toolbox.

  2. Parallel superconducting strip-line detectors: reset behaviour in the single-strip switch regime

    International Nuclear Information System (INIS)

    Casaburi, A; Heath, R M; Tanner, M G; Hadfield, R H; Cristiano, R; Ejrnaes, M; Nappi, C

    2014-01-01

    Superconducting strip-line detectors (SSLDs) are an important emerging technology for the detection of single molecules in time-of-flight mass spectrometry (TOF-MS). We present an experimental investigation of a SSLD laid out in a parallel configuration, designed to address selected single strip-lines operating in the single-strip switch regime. Fast laser pulses were tightly focused onto the device, allowing controllable nucleation of a resistive region at a specific location and study of the subsequent device response dynamics. We observed that in this regime, although the strip-line returns to the superconducting state after triggering, no effective recovery of the bias current occurs, in qualitative agreement with a phenomenological circuit simulation that we performed. Moreover, from theoretical considerations and by looking at the experimental pulse amplitude distribution histogram, we have the first confirmation of the fact that the phenomenological London model governs the current redistribution in these large area devices also after detection events. (paper)

  3. Parallel superconducting strip-line detectors: reset behaviour in the single-strip switch regime

    Science.gov (United States)

    Casaburi, A.; Heath, R. M.; Tanner, M. G.; Cristiano, R.; Ejrnaes, M.; Nappi, C.; Hadfield, R. H.

    2014-04-01

    Superconducting strip-line detectors (SSLDs) are an important emerging technology for the detection of single molecules in time-of-flight mass spectrometry (TOF-MS). We present an experimental investigation of a SSLD laid out in a parallel configuration, designed to address selected single strip-lines operating in the single-strip switch regime. Fast laser pulses were tightly focused onto the device, allowing controllable nucleation of a resistive region at a specific location and study of the subsequent device response dynamics. We observed that in this regime, although the strip-line returns to the superconducting state after triggering, no effective recovery of the bias current occurs, in qualitative agreement with a phenomenological circuit simulation that we performed. Moreover, from theoretical considerations and by looking at the experimental pulse amplitude distribution histogram, we have the first confirmation of the fact that the phenomenological London model governs the current redistribution in these large area devices also after detection events.

  4. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

    2009-01-01

    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  5. Current-Induced Switching of a Single-Molecule Magnet with Arbitrary Oriented Easy Axis

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2007-01-01

    The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current flowing through the system. To do this we consider a model system that consists of a SMM embedded in the nonmagnetic barrier of a magnetic tunnel junction. The anisotropy axis of the SMM forms an arbitrary angle with magnetic moments of the leads (the latt...

  6. Spectrum sensing using single-radio switched-beam antenna systems

    DEFF Research Database (Denmark)

    Tsakalaki, Elpiniki; Wilcox, David; De Carvalho, Elisabeth

    2012-01-01

    The paper describes spectrum sensing using single-radio switched-beam arrays with reactance-loaded parasitic elements. At a given frequency, the antenna's loading conditions (reactive loads) are optimized for maximum average beamforming gain in the beampattern look direction. Circular permutations...... of the reactive loads rotate the narrowband beampattern to different angular positions dividing the whole space around the cognitive receiver into several angular subspaces. The beampattern directionality leverages the performance of spectrum sensing algorithms like the energy detection by enhancing the receive...

  7. Position Estimation for Switched Reluctance Motor Based on the Single Threshold Angle

    Science.gov (United States)

    Zhang, Lei; Li, Pang; Yu, Yue

    2017-05-01

    This paper presents a position estimate model of switched reluctance motor based on the single threshold angle. In view of the relationship of between the inductance and rotor position, the position is estimated by comparing the real-time dynamic flux linkage with the threshold angle position flux linkage (7.5° threshold angle, 12/8SRM). The sensorless model is built by Maltab/Simulink, the simulation are implemented under the steady state and transient state different condition, and verified its validity and feasibility of the method..

  8. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  9. Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dal Savio, C.

    2006-02-20

    Single InAs quantum dots (QDs) grown with the Stranski-Krastanov method in a In{sub 0.12}Ga{sub 0.88}As quantum well embedded in GaAs and emitting in the near infrared have been optically investigated. To perform QD spectroscopy at low temperatures a very stable micro-photoluminescence ({mu}-PL) microscope set-up fully integrated in a liquid helium (LHe) cryostate has been successfully developed. The system is based on the cold finger technique and a Fourier Transform (FT) spectrometer combined with a nitrogen cooled Ge detector. Photoluminescence of the QDs was excited non resonantly with a He-Ne laser and single dot spectroscopy was carried out at temperatures below 60 K. The experimental set-up allows mapping of the optical emission by recording spectra for every point of a scan grid. This mapping mode is used to acquire optical images and to locate a particular dot for investigation. Series of measurement on a single QD were normally performed over a long time (from a few days to a week), with the need of daily adjustment in the sub-micrometer range. At low excitation power a single sharp line (E{sub x}) arising from recombination of a single exciton in the dot is observed. Varying the excitation density the spectra become more complex, with appearance of the biexciton emission line (E{sub xx}) on the lower energies side of the E{sub x} line, followed by emission from excitons occupying higher shells in the dot. Measured biexciton binding energies and power dependence are in good agreement with values reported in the literature. The temperature dependence of the optical emission was investigated. The energy shows the characteristic decrease related to the shrinking of the semiconductor band gap, while the linewidth evolution is compatible with broadening due to coupling with acoustic and optical phonons. A statistics of biexciton binding energies over a dozen of dots was acquired and the results compared with single QD spectroscopy data available in the

  10. Single-Switch User Interface for Robot Arm to Help Disabled People Using RT-Middleware

    Directory of Open Access Journals (Sweden)

    Yujin Wakita

    2011-01-01

    Full Text Available We are developing a manipulator system in order to support disabled people with less muscle strength such as muscular dystrophy patients. Such a manipulator should have an easy user interface for the users to control it. But the supporting manipulator for disabled people cannot make large industry, so we should offer inexpensive manufacturing way. These type products are called “orphan products.” We report on the construction of the user interface system using RT-Middleware which is an open software platform for robot systems. Therefore other user interface components or robot components which are adapted to other symptoms can be replaced with the user interface without any change of the contents. A single switch and scanning menu panel are introduced as the input device for the manual control of the robot arm. The scanning menu panel is designed to perform various actions of the robot arm with the single switch. A manipulator simulation system was constructed to evaluate the input performance. Two muscular dystrophy patients tried our user interface to control the robot simulator and made comments. According to the comments by them, we made several improvements on the user interface. This improvements examples prepare inexpensive manufacturing way for orphan products.

  11. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  12. Control of single photon emitters in semiconductor nanowires by surface acoustic waves

    Science.gov (United States)

    Lazić, S.; Hernández-Mínguez, A.; Santos, P. V.

    2017-08-01

    We report on an experimental study into the effects of surface acoustic waves on the optical emission of dot-in-a-nanowire heterostructures in III-V material systems. Under direct optical excitation, the excitonic energy levels in III-nitride dot-in-a-nanowire heterostructures oscillate at the acoustic frequency, producing a characteristic splitting of the emission lines in the time-integrated photoluminescence spectra. This acoustically induced periodic tuning of the excitonic transition energies is combined with spectral detection filtering and employed as a tool to regulate the temporal output of anti-bunched photons emitted from these nanowire quantum dots. In addition, the acoustic transport of electrons and holes along a III-arsenide nanowire injects the electric charges into an ensemble of quantum dot-like recombination centers that are spatially separated from the optical excitation area. The acoustic population and depopulation mechanism determines the number of carrier recombination events taking place simultaneously in the ensemble, thus allowing control of the anti-bunching degree of the emitted photons. The results presented are relevant for the dynamic control of single photon emission in III-V semiconductor heterostructures.

  13. Single Photon Detection with Semiconductor Pixel Arrays for Medical Imaging Applications

    CERN Document Server

    Mikulec, B

    2000-01-01

    This thesis explores the functioning of a single photon counting pixel detector for X-ray imaging. It considers different applications for such a device, but focuses mainly on the field of medical imaging. The new detector comprises a CMOS read-out chip called PCC containing 4096 identical channels each of which counts X-ray hits. The conversion of the X-rays to electric charge takes place in a semiconductor sensor which is segmented into 4096 matching square diodes of side length 170 um, the 'pixels'. The photon counting concept is based on setting a threshold in energy above which a hit is registered. The immediate advantages are the elimination of background and the in principle unlimited dynamic range. Moreover, this approach allows the use of an electronic shutter for arbitrary measurement periods. As the device was intended for operation in the energy range of ~10-70 keV, gallium arsenide was selected as the preferred sensor material. The development of this detector followed on from about 10 years of r...

  14. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  15. A Stochastic Single-Molecule Event Triggers Phenotype Switching of a Bacterial Cell

    Science.gov (United States)

    Xie, Sunney; Choi, Paul; Cai, Long

    2009-03-01

    By monitoring fluorescently labeled lactose permease with single-molecule sensitivity, we investigated the molecular mechanism of how an Escherichia coli cell with the lac operon switches from one phenotype to another. At intermediate inducer concentrations, a population of genetically identical cells exhibits two phenotypes: induced cells with highly fluorescent membranes and uninduced cells with a small number of membrane-bound permeases. We found that this basal-level expression results from partial dissociation of the tetrameric lactose repressor from one of its operators on looped DNA. In contrast, infrequent events of complete dissociation of the repressor from DNA result in large bursts of permease expression that trigger induction of the lac operon. Hence, a stochastic single-molecule event determines a cell's phenotype.

  16. Single-Phase Hybrid Switched Reluctance Motor for Low-Power Low-Cost Applications

    DEFF Research Database (Denmark)

    Lu, Kaiyuan; Rasmussen, Peter Omand; Jakobsen, Uffe

    2011-01-01

    This paper presents a new single-phase, Hybrid Switched Reluctance (HSR) motor for low-cost, low-power, pump or fan drive systems. Its single-phase configuration allows use of a simple converter to reduce the system cost. Cheap ferrite magnets are used and arranged in a special flux concentration...... manner to increase effectively the torque density and efficiency of this machine. The efficiency of this machine is comparable to the efficiency of a traditional permanent magnet machine in the similar power range. The cogging torque, due to the existence of the permanent magnetic field, is beneficially...... used to reduce the torque ripple and enable self-starting of the machine. The starting torque of this machine is significantly improved by a slight extension of the stator pole-arc. A prototype machine and a complete drive system has been manufactured and tested. Results are given in this paper....

  17. Synthesis and single crystal growth of perovskite semiconductor CsPbBr3

    Science.gov (United States)

    Zhang, Mingzhi; Zheng, Zhiping; Fu, Qiuyun; Chen, Zheng; He, Jianle; Zhang, Sen; Chen, Cheng; Luo, Wei

    2018-02-01

    As a typical representative of all-inorganic lead halide perovskites, cesium lead bromine (CsPbBr3) has attracted significant attention in recent years. The direct band gap semiconductor CsPbBr3 has a wide band gap of 2.25 eV and high average atomic number (Cs: 55, Pb: 82 and Br: 35), which meet most of the requirements for detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response. However, the growth of large volume CsPbBr3 single crystals remains a challenge. In this paper, the synthesis of CsPbBr3 polycrystalline powders by a chemical co-precipitation method was investigated and the optimum synthesis conditions were obtained. A large CsPbBr3 single crystal of 8 mm diameter and 60 mm length was obtained by a creative electronic dynamic gradient (EDG) method. X-ray diffraction (XRD) patterns and X-ray rocking curve showed that the CsPbBr3 crystal preferentially oriented in the (1 1 0) direction and had a low dislocation density and small residual stress in the crystal. The IR and UV-Vis transmittance and temperature-dependent photoluminescence (PL) spectra showed the crystal had a good basic optical performance. The almost linear current-voltage (I-V) curves implied good ohmic contact between the electrodes and crystal surfaces. The resistivity of the crystal was calculated 109-1010 Ω cm. The above results showed that the quality of the obtained crystal had met the demand of optoelectronic applications.

  18. Selective mode coupling in microring resonators for single mode semiconductor lasers

    Science.gov (United States)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  19. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  20. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang [Columbia Univ., New York, NY (United States); Frisbie, Daniel [Univ. of Minnesota, Minneapolis, MN (United States)

    2017-03-31

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering.

  1. Single-photon switch: Controllable scattering of photons inside a one-dimensional resonator waveguide

    Science.gov (United States)

    Zhou, L.; Gong, Z. R.; Liu, Y. X.; Sun, C. P.; Nori, F.

    2010-03-01

    We analyze the coherent transport of a single photon, which propagates in a one-dimensional coupled-resonator waveguide and is scattered by a controllable two-level system located inside one of the resonators of this waveguide. Our approach, which uses discrete coordinates, unifies low and high energy effective theories for single-photon scattering. We show that the controllable two-level system can behave as a quantum switch for the coherent transport of a single photon. This study may inspire new electro-optical single-photon quantum devices. We also suggest an experimental setup based on superconducting transmission line resonators and qubits. References: L. Zhou, Z.R. Gong, Y.X. Liu, C.P. Sun, F. Nori, Controllable scattering of photons inside a one-dimensional resonator waveguide, Phys. Rev. Lett. 101, 100501 (2008). L. Zhou, H. Dong, Y.X. Liu, C.P. Sun, F. Nori, Quantum super-cavity with atomic mirrors, Phys. Rev. A 78, 063827 (2008).

  2. Two-dimensional single fluid MHD simulations of plasma opening switches

    International Nuclear Information System (INIS)

    Roderick, N.F.; Payne, S.S.; Peterkin, R.E. Jr.; Frese, M.H.; Hussey, T.W.

    1989-01-01

    Simulations of plasma opening switch have been made using two-dimensional, single fluid, magnetohydrodynamic codes HAM and MACH2. A variety of mechanisms for magnetic field penetration have been investigated. These include plasma convection, classical and microturbulent resistive diffusion, and Hall effect transport. We find that plasma microturbulent models are necessary to explain the broad current channels observed in experiments. Both heuristic and consistent microturbulent models are able to explain observed channel widths and penetration features. The best results are obtained for a consistent model that includes the Buneman, ion acoustic, and lower hybrid microturbulent collision frequencies and threshold conditions. Maximum microturbulent collision frequencies of 5 ω p , are typical. Field transport and current channel profiles are in excellent agreement with experimental observations for GAMBLE I, GAMBLE II, and SUPERMITE experiments. Dominant field penetration mechanisms and center of mass plasma motion are current and density dependent. Including the Hall effect enhanced field penetration. Center of mass motion is negligible for the GAMBLE I experiments but significant for the GAMBLE II conditions. Scaling of plasma opening time with switch length and density can be fit by linear representations for lengths from 0.03 m to 0.24 m and ion densities from 10 18 m -3 to 1.5 times 10 19 m -3 . 15 refs., 7 figs., 1 tab

  3. Real-time observation of conformational switching in single conjugated polymer chains.

    Science.gov (United States)

    Tenopala-Carmona, Francisco; Fronk, Stephanie; Bazan, Guillermo C; Samuel, Ifor D W; Penedo, J Carlos

    2018-02-01

    Conjugated polymers (CPs) are an important class of organic semiconductors that combine novel optoelectronic properties with simple processing from organic solvents. It is important to study CP conformation in solution to understand the physics of these materials and because it affects the properties of solution-processed films. Single-molecule techniques are unique in their ability to extract information on a chain-to-chain basis; however, in the context of CPs, technical challenges have limited their general application to host matrices or semiliquid environments that constrain the conformational dynamics of the polymer. We introduce a conceptually different methodology that enables measurements in organic solvents using the single-end anchoring of polymer chains to avoid diffusion while preserving polymer flexibility. We explore the effect of organic solvents and show that, in addition to chain-to-chain conformational heterogeneity, collapsed and extended polymer segments can coexist within the same chain. The technique enables real-time solvent-exchange measurements, which show that anchored CP chains respond to sudden changes in solvent conditions on a subsecond time scale. Our results give an unprecedented glimpse into the mechanism of solvent-induced reorganization of CPs and can be expected to lead to a new range of techniques to investigate and conformationally manipulate CPs.

  4. Performance analysis of series-shunt and TEE types of microwave switches of different semiconductor materials for Satellite communications

    Directory of Open Access Journals (Sweden)

    Cirilo Gabino León Vega

    2014-01-01

    Full Text Available Se presenta un análisis de desempeño de conmutadores de microondas compuestos, de una entrada y una salida (SPST, diseñados con diodos p-i-n tipo masa con diferentes tipos de materiales semiconductores para las bandas de frecuencia Ku y Ka. Las dos configuraciones de conmutadores compuestos más comunes son aquellos con diodos p-i-n ubicados en diseños serie-paralelo y serie-paralelo-serie (TEE y aquí son analizados utilizando materiales semiconductores de Si, GaAs, GaN-WZ, GaN-ZB, GaSb, InP y SiC. Se presenta la metodología utilizada en los cálculos de resistencia serie y capacitancia de unión en los diodos p-i-n con el propósito de calcular los parámetros de desempeño propios de cada dispositivo conmutador. Estos parámetros son pérdida de inserción y aislamiento. Los conmutadores de tipo serie-paralelo, exceptuando el conmutador basado en diodo p-i-n de SiC-6 H, exhiben pérdidas de inserción menores a 0.2 dB y aislamiento hasta 41dB a la frecuencia de operación de 12 GHz. El conmutador diodo p-i-n tipo TEE con base en GaN-ZB tiene la mejor respuesta de pérdida de inserción menor a 0.23 dB y aislamiento hasta 52 dB, a las frecuencias de operación de 12 GHz y 30 GHz. El conmutador compuesto con base en diodo p-i-n de GaSb alcanza el mejor desempeño a la frecuencia de 12 GHz. Los conmutadores de microondas con configuración TEE tienen respuestas satisfactorias para la frecuencia de 30 GHz.

  5. Multichannel packets buffering in cascaded double-loop optical buffer based on the pure phase switching of gain-transparent semiconductor optical amplifier

    Science.gov (United States)

    Yongjun, Wang; Xiangjun, Xin; Chao, Shang

    2014-01-01

    An innovative cascaded double-loop optical buffer (DLOB) with a large dynamic variable delay suitable for buffering multichannel data packets is proposed and demonstrated. In this buffer, the pure phase modulation of the gain-transparent semiconductor optical amplifier (GT-SOA) is used as the optical switching, and then an experimental system with two buffering units is established. The data packets carried out on four different wavelengths have been stored for 12 round trips successively in DLOB1 and DLOB2, and a long delay time of 39.6 μs has been achieved. The pulse distortion, pattern effect, and channel crosstalk caused by the SOA's nonlinear gain, carrier recovery time, cross-phase modulation, and cross-gain modulation have been eliminated clearly, and the accumulation of ASE noise has also been effectively mitigated. The signal details, the eye diagrams, and the bit error ratio curves for all four wavelengths show that the proposed optical buffer is an effective approach for buffering multichannel data packets, especially when the GT-SOA's transmission loss decreases in the near future.

  6. High Power, Repetitive, Stacked Blumlein Pulse Generators Commuted by a Single Switching Element

    Science.gov (United States)

    Bhawalkar, Jayant Dilip

    In this work, the stacked Blumlein pulsers developed at the University of Texas at Dallas were characterized and shown to be versatile sources of pulse power for a variety of applications. These devices consisted of several triaxial Blumleins stacked in series at one end. The lines were charged in parallel and synchronously commuted repetitively with a single switching element at the other end. In this way, relatively low charging voltages were multiplied to give a high discharge voltage across an arbitrary load without the need for complex Marx bank circuitry. Several pulser parameters such as the number of stacked Blumlein lines, line configuration, type of switching element, and the length of the lines, were varied and the waveform characteristics were observed and analyzed. It was shown that these devices are capable of generating fast rising waveforms with a wide range of peak voltage and current values. The generation of high power waveforms with pulse durations in the range of 80-600 ns was demonstrated without degradation of the voltage gains. The results of this work indicated that unlike generators based on stacked transmission lines, the effects of parasitic modes were not appreciable for the stacked Blumlein pulsers. Opportunities for tactically packaging these pulsers were also investigated and a significant reduction in their size and weight was demonstrated. For this, dielectric lifetime and Blumlein spacing studies were performed on small scale prototypes. In addition to production of intense X-ray pulses, the possible applications for these novel pulsers include driving magnetrons for high power microwave generation, pumping laser media, or powering e-beam diodes. They could also serve as compact, tabletop sources of high power pulses for various research experiments.

  7. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  8. Single-chip MEMS 5 × 5 and 20 × 20 double-pole single-throw switch arrays for automating telecommunication networks

    International Nuclear Information System (INIS)

    Braun, S; Oberhammer, J; Stemme, G

    2008-01-01

    This paper reports on microelectromechanical (MEMS) switch arrays with 5 × 5 and 20 × 20 double-pole single-throw (DPST) switches embedded and packaged on a single chip, which are intended for automating main distribution frames in copper-wire telecommunication networks. Whenever a customer requests a change in his telecommunication services, the copper-wire network has to be reconfigured which is currently done manually by a costly physical re-routing of the connections in the main distribution frames. To reduce the costs, new methods for automating the network reconfiguration are sought after by the network providers. The presented devices comprise 5 × 5 or 20 × 20 double switches, which allow us to interconnect any of the 5 or 20 input lines to any of the 5 or 20 output lines. The switches are based on an electrostatic S-shaped film actuator with the switch contact on a flexible membrane, moving between a top and a bottom electrode. The devices are fabricated in two parts which are designed to be assembled using selective adhesive wafer bonding, resulting in a wafer-scale package of the switch array. The on-chip routing network consists of thick metal lines for low resistance and is embedded in bencocyclobutene (BCB) polymer layers. The packaged 5 × 5 switch arrays have a size of 6.7 × 6.4 mm 2 and the 20 × 20 arrays are 14 × 10 mm 2 large. The switch actuation voltages for closing/opening the switches averaged over an array were measured to be 21.2 V/15.3 V for the 5 × 5 array and 93.2 V/37.3 V for the 20 × 20 array, respectively. The total signal line resistances vary depending on the switch position within the array between 0.13 Ω and 0.56 Ω for the 5 × 5 array and between 0.08 Ω to 2.33 Ω for the 20 × 20 array, respectively. The average resistance of the switch contacts was determined to be 0.22 Ω with a standard deviation of 0.05 Ω

  9. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  10. Numerical analysis of intrinsic bistability and chromatic switching in Tm3+ single-doped systems under photon avalanche pumping scheme

    International Nuclear Information System (INIS)

    Li Li; Zhang Xinlu; Chen Lixue

    2008-01-01

    In this paper, we predict and numerically demonstrate the intrinsic intensity bistability, spectra bistability and chromatic switching of visible-infrared emission in Tm 3+ single-doped systems that are pumped by the photon avalanche scheme at 648 nm. Based on the coupled rate equation theory, the evolutions of the populations at various Tm 3+ energy levels, emission spectra and fluorescence intensity versus pump excitation are numerically investigated in detail. The results show that intrinsic optical bistability (IOB) associated with emission spectra and luminescence intensity takes place in the vicinity of the avalanche threshold (∼10 kW cm -2 ). When the pump excitation rises above the switching threshold (∼17.5 kW cm -2 ), the chromatic switching between the infrared (1716 nm) and the visible blue (452/469 nm) spectra can be performed. Moreover, the influences of system parameters on IOB and the origin of chromatic switching are discussed. These unique characteristics of Tm 3+ -doped systems would lead to the new possibility of the development of pump-controlled all-solid-state luminescence switches and optical bistability switches.

  11. Bianthrone in a Single-Molecule Junction: Conductance Switching with a Bistable Molecule Facilitated by Image Charge Effects

    DEFF Research Database (Denmark)

    Bjørnholm, Thomas

    2010-01-01

    Bianthrone is a sterically hindered compound that exists in the form of two nonplanar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated with molecular isomerizat...

  12. Manipulation of spin states in single II-VI-semiconductor quantum dots; Manipulation von Spinzustaenden in einzelnen II-VI-Halbleiter-Quantenpunkten

    Energy Technology Data Exchange (ETDEWEB)

    Hundt, Andreas

    2007-10-09

    Semiconductor quantum dots (QD) are objects on the nanometer scale, where charge carriers are confined in all three dimensions. This leads to a reduced interaction with the semiconductor lattice and to a discrete density of states. The spin state of a particle defines the polarisation of the emitted light when relaxating to an energetically lower state. Spin exchange and optical transition selection rules (conservation law for spin) define the optical control of spin states. In the examined QD in II-VI seminconductor systems the large polar character of the bindings enables to observe particle interactions by spectroscopy of the photo-luminescence (PL), making QD attractive for basic research. This work subjects in its first part single negatively charged non-magnetic QD. The odd number of carriers allows to study the latter in an unpaired state. By using polarization-resolved micro-PL spectroscopy, the spin-states of single, isolated QD can be studied reproducibly. Of special interest are exchange interactions in this few-particle system named trion. By excitation spectroscopy energetically higher states can be identified and characterized. The exchange interactions appearing here lead to state mixing and fine structure patterns in the spectra. Couplings in excited hole states show the way to the optical orientation of the resident electron spin. The spin configuration of the trion triplet state can be used to optically control the resident electron spin. Semimagnetic QD are focused in the second part of this work. The interaction with a paramagnetic environment of manganese spins leads to new magneto-optical properties of the QD. They reveal on a single dot level by line broadening due to spin fluctuations and by the giant Zeeman effect of the dot ensemble. Of special interest in this context is the influence of the reduced system dimension and the relatively larger surface of the system on the exchange mechanisms. The strong temperature dependence of the spin

  13. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  14. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  15. Phonon scattering inhibits simultaneous near-unity efficiency and indistinguishability in semiconductor single-photon sources

    DEFF Research Database (Denmark)

    Iles-Smith, Jake; McCutcheon, Dara P. S.; Nazir, Ahsan

    2017-01-01

    Semiconductor quantum dots (QDs) have recently emerged as a leading platform to generate highly indistinguishable photons efficiently, and this work addresses the timely question of how good these solid-state sources can ultimately be. We establish the crucial role of lattice relaxation in these ......Semiconductor quantum dots (QDs) have recently emerged as a leading platform to generate highly indistinguishable photons efficiently, and this work addresses the timely question of how good these solid-state sources can ultimately be. We establish the crucial role of lattice relaxation...... relationship, in which indistinguishability and efficiency cannot be simultaneously increased. For cavities, the frequency selectivity of the Purcell enhancement results in a more subtle trade-off, in which indistinguishability and efficiency can be increased simultaneously, although not arbitrarily, which...

  16. Immediate single tooth replacement with subepithelial connective tissue graft using platform switching implants: a case series.

    Science.gov (United States)

    Chung, Seunghwan; Rungcharassaeng, Kitichai; Kan, Joseph Y K; Roe, Phillip; Lozada, Jaime L

    2011-10-01

    This case series evaluated the facial gingival stability following single immediate tooth replacement in conjunction with subepithelial connective tissue graft (SCTG). Implant success rate and peri-implant tissue response were also reported. Ten patients (6 male, 4 female), with a mean age of 52.1 (range = 22.7 to 67.1) years, underwent immediate implant placement and provisionalization with SCTG and were evaluated clinically and radiographically at presurgery (T0), at the time of immediate tooth replacement and SCTG (T1), and 3 months (T2), 6 months (T3), and 12 months (T4) after surgery. Data were analyzed using the Friedman and Wilcoxon signed-ranks tests at the significance level of α = .05. At 1 year, 9 of 10 implants remained osseointegrated with the overall mean marginal bone change of -0.31 mm and a mean facial gingival level change of -0.05 mm. The modified plaque index scores showed that patients were able to maintain a good level of hygiene throughout the study. The papilla index score indicated that at T4, more than 50% of the papilla fill was observed in 89% of all sites. When proper 3-dimensional implant position is achieved and bone graft is placed into the implant-socket gap, favorable success rate and peri-implant tissue response of platform switching implants can be achieved following immediate tooth replacement in conjunction with subepithelial connective tissue graft.

  17. Deterministic switching of a magnetoelastic single-domain nano-ellipse using bending

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Cheng-Yen; Sepulveda, Abdon; Keller, Scott; Carman, Gregory P. [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, California 90095 (United States)

    2016-03-21

    In this paper, a fully coupled analytical model between elastodynamics with micromagnetics is used to study the switching energies using voltage induced mechanical bending of a magnetoelastic bit. The bit consists of a single domain magnetoelastic nano-ellipse deposited on a thin film piezoelectric thin film (500 nm) attached to a thick substrate (0.5 mm) with patterned electrodes underneath the nano-dot. A voltage applied to the electrodes produces out of plane deformation with bending moments induced in the magnetoelastic bit modifying the magnetic anisotropy. To minimize the energy, two design stages are used. In the first stage, the geometry and bias field (H{sub b}) of the bit are optimized to minimize the strain energy required to rotate between two stable states. In the second stage, the bit's geometry is fixed, and the electrode position and control mechanism is optimized. The electrical energy input is about 200 (aJ) which is approximately two orders of magnitude lower than spin transfer torque approaches.

  18. Mismatched single stranded antisense oligonucleotides can induce efficient dystrophin splice switching

    Directory of Open Access Journals (Sweden)

    Kole Ryszard

    2011-10-01

    Full Text Available Abstract Background Antisense oligomer induced exon skipping aims to reduce the severity of Duchenne muscular dystrophy by redirecting splicing during pre-RNA processing such that the causative mutation is by-passed and a shorter but partially functional Becker muscular dystrophy-like dystrophin isoform is produced. Normal exons are generally targeted to restore the dystrophin reading frame however, an appreciable subset of dystrophin mutations are intra-exonic and therefore have the potential to compromise oligomer efficiency, necessitating personalised oligomer design for some patients. Although antisense oligomers are easily personalised, it remains unclear whether all patient polymorphisms within antisense oligomer target sequences will require the costly process of producing and validating patient specific compounds. Methods Here we report preclinical testing of a panel of splice switching antisense oligomers, designed to excise exon 25 from the dystrophin transcript, in normal and dystrophic patient cells. These patient cells harbour a single base insertion in exon 25 that lies within the target sequence of an oligomer shown to be effective at removing exon 25. Results It was anticipated that such a mutation would compromise oligomer binding and efficiency. However, we show that, despite the mismatch an oligomer, designed and optimised to excise exon 25 from the normal dystrophin mRNA, removes the mutated exon 25 more efficiently than the mutation-specific oligomer. Conclusion This raises the possibility that mismatched AOs could still be therapeutically applicable in some cases, negating the necessity to produce patient-specific compounds.

  19. Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Aiswariya Sekar

    2015-11-01

    Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

  20. Advantages of using a two-switch forward in single-stage power factor corrected power supplies

    DEFF Research Database (Denmark)

    Petersen, Lars

    2000-01-01

    A single-stage power factor corrected power supply using a two-switch forward is proposed to increase efficiency. The converter is operated in the DCM (discontinues conduction mode) and it is shown that this operation mode ensures the intermediate DC-bus to be controlled only by means of circuit...... parameters and therefore independent of load variations. The DCM operation often has a diminishing effect on the efficiency but by use of the two-switch topology high efficiency with minimum circuit complexity can be achieved in this mode. A 500 W 70 V prototype of the two-switch boost-forward PFC power...... supply has been implemented. The measured efficiency is between 85% and 88.5% in the range 30 W-500 W and the measured power factor at full load is 0.95....

  1. Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulation

    Science.gov (United States)

    Mielke, Johannes; Selvanathan, Sofia; Peters, Maike; Schwarz, Jutta; Hecht, Stefan; Grill, Leonhard

    2012-10-01

    Three different molecules, each containing two azobenzene switching units, were synthesized, successfully deposited onto a Au(111) surface by sublimation and studied by scanning tunneling microscopy at low temperatures. To investigate the influence of electronic coupling between the switching units as well as to the surface, the two azo moieties were connected either via π-conjugated para-phenylene or decoupling meta-phenylene bridges, and the number of tert-butyl groups was varied in the meta-phenylene-linked derivatives. Single molecules were found to be intact after deposition as identified by their characteristic appearance in STM images. Due to their mobility on the Au(111) surface at room temperature, the molecules spontaneously formed self-organized molecular arrangements that reflected their chemical structure. While lateral displacement of the molecules was accomplished by manipulation, trans-cis isomerization processes, typical for azobenzene switches, could not be induced.

  2. Single Anastomosis Duodeno-Ileal Switch (SADIS): A Systematic Review of Efficacy and Safety.

    Science.gov (United States)

    Shoar, Saeed; Poliakin, Lauren; Rubenstein, Rebecca; Saber, Alan A

    2018-01-01

    Owing to the possibility of weight regain after the long-term follow-up of gastric bypass patients and because of the high morbidity of biliopancreatic diversion with duodenal switch, single-anastomosis duodeno-ileal switch (SADIS) has emerged as a rescue procedure in bariatric surgery. The purpose of this review is to summarize the literature data on SADIS. University Hospital, NY. A comprehensive literature review was performed through October 2016 to identify English studies on SADIS performed in human subjects. Outcomes of interest were technical considerations, postoperative complications, weight loss outcome, comorbidity resolution rate, and nutritional deficiency after SADIS. A total of 12 studies including 581 SADIS patients (217 males and 364 females) were included. SADIS was a primary procedure in 508 patients (87.4%) and a conversion procedure in 73 patients (12.6%). The length of common limb was 300 cm in 54.2%, 250 cm in 23%, and 200 cm in 13.4% of patients. Anastomosis technique was a linear stapler in 26.7% and a hand sewn suture technique in 73.3% of patients. Diarrhea was the most common complication (1.2%). The average %EWL was 30% at 3 months, 55% at 6 months, 70% at 1 year, and 85% at 2 years. Co-morbidity resolution rate was 74.1% for type 2 diabetes mellitus, 96.3% for hypertension, 68.3% for dyslipidemia, 63.3% for obstructive sleep apnea, and 87.5% for GERD. Overall, vitamin A, selenium, and iron deficiency were the most common nutritional deficiencies with the possibility of the protein malnutrition in up to 34% of the patients when measured. As a modified bariatric procedure, SADIS has promising outcomes for weight loss and comorbidity resolution in morbidly obese patients. When measured, there was a high prevalence of macro-nutrient deficiencies following SADIS. There is a high technical variability, and long-term data are required before any meaningful conclusion can be made.

  3. New switching processes using the integrated protections of power semi-conductors: application to the development of static converters with self-switching process; nouveaux mecanismes de commutation exploitant les protections integrees des semi-conducteurs de puissance: application a la conception de convertisseurs statiques a commutation automatique

    Energy Technology Data Exchange (ETDEWEB)

    Roux, N.

    2004-07-15

    This thesis deals with a new switching process which integrates the semiconductor protection directly in the switching principle, in order to generate new static converters. It consists of a self-controlled transition which proceeds on a non-zero current or voltage level. 2 It can be associated with controlled or naturally switching processes making it possible to go from two to five change of state types of a switching cell. So, new elementary operation rules of a switching cell emerge. Considering the great number of possible switches, a synthesis methodology of cells with a source reversibility, whose switches are identical, is presented making it possible to reveal various solutions, of which two seem particularly interesting: the self-breaking inverter and rectifier cells, both using the self-breaking thyristor-dual. This last is used as study support of the self-breaking principle. Then, the manuscript concentrates on the study of converters, associations of elementary cells, revealing in particular the DC-current transformer and the reversible three-phase self-breaking rectifier. This last had been developed as an industrial prototype. Lastly, starting from the concept of a wind chain, our assembly has been compared with what is presently done as network converters, revealing lesser losses as well as a higher energetic efficiency. (author)

  4. Determination of chlorine concentration using single temperature modulated semiconductor gas sensor

    Science.gov (United States)

    Woźniak, Ł.; Kalinowski, P.; Jasiński, G.; Jasiński, P.

    2016-11-01

    A periodic temperature modulation using sinusoidal heater voltage was applied to a commercial SnO2 semiconductor gas sensor. Resulting resistance response of the sensor was analyzed using a feature extraction method based on Fast Fourier Transformation (FFT). The amplitudes of the higher harmonics of the FFT from the dynamic nonlinear responses of measured gas were further utilized as an input for Artificial Neuron Network (ANN). Determination of the concentration of chlorine was performed. Moreover, this work evaluates the sensor performance upon sinusoidal temperature modulation.

  5. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  6. Q-Switched High Power Single Frequency 2 Micron Fiber Laser, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Accurate measurement of atmospheric parameters with high resolution needs advanced lasers. In this SBIR program we propose to develop innovative Q-switched high...

  7. Q-Switched High Power Single Frequency 2 Micron Fiber Laser Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Accurate measurement of atmospheric parameters with high resolution needs advanced lasers. In this SBIR program we propose to develop innovative Q-switched high...

  8. Dipolar molecules inside C-70: an electric field-driven room-temperature single-molecule switch

    Czech Academy of Sciences Publication Activity Database

    Foroutan-Nejad, C.; Andrushchenko, Valery; Straka, Michal

    2016-01-01

    Roč. 18, č. 48 (2016), s. 32673-32677 ISSN 1463-9076 R&D Projects: GA ČR(CZ) GA14-03564S Institutional support: RVO:61388963 Keywords : room-temperature single-molecule switch * electric field * endohedral fullerene * density functional calculations Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.123, year: 2016 http://pubs.rsc.org/en/content/articlepdf/2016/cp/c6cp06986j

  9. Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers.

    Science.gov (United States)

    Hintikka, Mikko; Hallman, Lauri; Kostamovaara, Juha

    2017-12-01

    Timing walk error in pulsed time-of-flight based laser range finding was studied using two different types of laser diode drivers. The study compares avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor switch based laser pulse drivers, both producing 1.35 ns current pulse length (full width at half maximum), and investigates how the slowly rising part of the current pulse of the avalanche BJT based driver affects the leading edge timing walk. The walk error was measured to be very similar with both drivers within an input signal dynamic range of 1:10 000 (receiver bandwidth of 700 MHz) but increased rapidly with the avalanche BJT based driver at higher values of dynamic range. The slowly rising part does not exist in the current pulse produced by the metal-oxide-semiconductor (MOS) based laser driver, and thus the MOS based driver can be utilized in a wider dynamic range.

  10. Emission dynamics in QD systems: from single QD resonance fluorescence to many-emitter laser switching

    DEFF Research Database (Denmark)

    Lorke, Michael; Lund, Anders Mølbjerg; Nielsen, Per Kær

    2012-01-01

    and photonic confinement. This combination opens the possibility to exploit the Purcell effect to enhance and direct the photon emission. In this contribution, we investigate multiple facets of the emission dynamics in semiconductor QDs, ranging from the resonance fluorescence of QDs under pulsed excitation...

  11. Heat and mass transfer in semiconductor melts during single-crystal growth processes

    Science.gov (United States)

    Kakimoto, Koichi

    1995-03-01

    The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

  12. A compact seven switches topology and reduced DC-link capacitor size for single-phase stand-alone PV system with hybrid energy storages

    DEFF Research Database (Denmark)

    Liu, Xiong; Wang, Peng; Loh, Poh Chiang

    2011-01-01

    Single-phase stand-alone PV system is suitable for household applications in remote area. Hybrid battery/ultra-capacitor energy storage can reduce charge and discharge cycles and avoid deep discharges of battery. This paper proposes a compact seven switches structure for stand-alone PV system......-order harmonic current caused by single-phase inverter. In the proposed compact topology, a small size DC-link capacitor can achieve the same function through charging/discharging control of ultra-capacitor to mitigate second-order ripple current. Simulation results are provided to validate the effectiveness......, which otherwise needs nine switches configuration, inclusive of one switch for boost converter, four switches for single-phase inverter and four switches for two DC/DC converters of battery and ultra-capacitor. It is well-known that a bulky DC-link capacitor is always required to absorb second...

  13. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  14. "Switching on" the properties of single-molecule magnetism in triangular manganese(III) complexes.

    Science.gov (United States)

    Stamatatos, Theocharis C; Foguet-Albiol, Dolos; Lee, Sheng-Chiang; Stoumpos, Constantinos C; Raptopoulou, Catherine P; Terzis, Aris; Wernsdorfer, Wolfgang; Hill, Stephen O; Perlepes, Spyros P; Christou, George

    2007-08-01

    -frequency EPR spectra of single crystals of 4.3CH2Cl2 have provided precise spin Hamiltonian parameters, giving D = -0.3 cm(-1), B40 = -3 x 10(-5) cm(-1), and g = 2.00. The spectra also suggest a significant transverse anisotropy of E > or = 0.015 cm(-1). The combined work demonstrates the feasibility that structural distortions of a magnetic core imposed by peripheral ligands can "switch on" the properties of an SMM.

  15. Research of all-optical ultra-wideband triplet signal source based on a single semiconductor optical amplifier

    Science.gov (United States)

    Xue, Fei; Li, Pei-li; Zheng, Jia-jin; Wang, Li-li; Liang, Wei-kang

    2013-07-01

    A novel scheme for all-optical ultra-wideband triplet signal pulse generation based on the cross-gain modulation (XGM) in a single semiconductor optical amplifier (SOA) is demonstrated. In this scheme, only one optical source and one SOA are needed, so the configuration is simple. Due to only one wavelength is included in the generated triplet pulse, no time difference between output signal light and probe light is introduced during the transmission process. By using the software of Optisystem 7.0, the impacts of the input signal width, the optical power and the wavelength of the optical source on the generated triplet pulse are numerically simulated and studied. The results show that the proposed scheme has better triplet signal pulse when the input signal pulse width is larger, and it is insensitive to the wavelength change within a certain range.

  16. Single-Switch Equalization Charger Using Multiple Stacked Buck-Boost Converters for Series-Connected Energy-Storage Modules

    Science.gov (United States)

    Uno, Masatoshi; Tanaka, Koji

    Series connections of energy-storage modules such as electric double-layer capacitors (EDLCs) and lithium-ion batteries result in voltage imbalance because of the nonuniform properties of individual modules. Conventional voltage equalizers based on traditional dc-dc converters require numerous switches and/or transformers, and therefore, their costs and complexity tend to increase. This paper proposes a novel single-switch equalization charger using multiple stacked buck-boost converters. The single-switch operation not only reduces the circuit complexity but also contributes to increasing the reliability. The fundamental operating principles and design procedures of key components are presented in detail. An experimental charge test using a 25W prototype of the proposed equalization charger was performed for four series-connected EDLC modules whose initial voltages were intentionally imbalanced. Experimental results demonstrated that the proposed equalization charger could charge the series-connected modules preferentially in the order of increasing module voltage and that all the modules could be charged up to a uniform voltage level.

  17. Six switches solution for single-phase AC/DC/AC converter with capability of second-order power mitigation in DC-link capacitor

    DEFF Research Database (Denmark)

    Liu, Xiong; Wang, Peng; Loh, Poh Chiang

    2011-01-01

    This paper proposes an approach for DC-link second-order harmonic power cancellation in single-phase AC/DC/AC converter with reduced number of switches. The proposed six-switch converter has two bridges with three switches in each of them, where the middle switch in each bridge is shared by the AC....../DC rectifier and DC/AC inverter. A small size DC-link capacitor can be achieved through coordination control of rectifier and inverter to cancel the second-order oscillation power. Maximum available phase difference between rectifier’s and inverter’s modulation references is investigated to be dependent...... on their modulation indices of the six-switch converter, and high modulation indices are proved to be feasible for second-order power cancellation in the DC-link based on the phase difference analysis. Both reduced switch numbers and DC electrolytic capacitor size can be achieved using the proposed converter...

  18. Switching to emtricitabine, tenofovir and rilpivirine as single tablet regimen in virologically suppressed HIV-1-infected patients: a cohort study.

    Science.gov (United States)

    Gantner, P; Reinhart, S; Partisani, M; Baldeyrou, M; Batard, M-L; Bernard-Henry, C; Cheneau, C; de Mautort, E; Priester, M; Fafi-Kremer, S; Muret, P; Rey, D

    2015-02-01

    Emtricitabine/tenofovir/rilpivirine as a single-tablet regimen (STR) is widely used without licence in treatment-experienced patients. The purpose of this retrospective observational study was to assess viral suppression of ART-experienced patients switching to STR. We assessed 131 pretreated patients switching to STR with HIV RNA E138K pattern. In intent-to-treat analysis, 92% of participants (120 of 131) achieved HIV RNA <40 copies/mL. Only grade 1 to 2 adverse events were observed, mainly consisting of increased liver enzymes (n=33). Systemic exposure to rilpivirine was above the usually observed steady-state levels for the 18 measurements assessed. Efficacy and tolerability are similar to those in treatment-naïve patients. © 2014 British HIV Association.

  19. Single-photon all-optical switching using coupled microring resonators

    Indian Academy of Sciences (India)

    Abstract. We study the nonlinear phase response of a microring resonator coupled to a bus waveguide and the use of this nonlinear phase shift to store information in the microring resonator and enhance the switching characteristics of a Mach–Zehnder interferometer (MZI). By introducing coupling between adjacent ...

  20. Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

    Science.gov (United States)

    Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

    2017-08-01

    Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

  1. Super-Resolution Definition of Coordinates of Single Semiconductor Nanocrystal (Quantum Dot: Luminescence Intensity Dependence

    Directory of Open Access Journals (Sweden)

    Eremchev M. Yu.

    2015-01-01

    Full Text Available In this research a relation between the accuracy of restoration of the single quantum dots (QD CdSe/CdS/ZnS cross-cut coordinates and luminescence intensity was investigated. It was shown that the limit of the accuracy of determining the coordinates of a single QD for a considerable total amount of registered photons approaches its limiting value that is comparable to the size of the QD. It also means that the installation used in the research is mechanically stable enough to reach the limiting values of determination accuracy of point emitters coordinates.

  2. An important rule for realizing metal → half-metal → semiconductor transition in single-molecule junctions

    International Nuclear Information System (INIS)

    Zeng, Jing; Chen, Ke-Qiu; Long, Mengqiu

    2017-01-01

    Recently, Zhong et al (2015 Nano Lett . 15 8091) found that two additional hydrogen atoms can be adsorbed to the opposite aza-bridging nitrogen atoms of the manganese phthalocyanine (MnPc) macrocycle when exposed to H 2 . Thus the symmetry of the MnPc molecule is changed from 4-fold to 2-fold. Motivated by this recent experiment, we theoretically investigate a MnPc-based single-molecule junction in this work and propose a simple and reliable way to realize the transition of its electronic properties. On the basis of spin-polarized density-functional theory calculations combined with the Keldysh nonequilibrium Green’s technique, we find that the gradual hydrogenation in MnPc molecules gives rise to the changes of the hardness of the electron density and spin-selective orbital decoupling, which eventually leads to the realization of the first ever metal  →  half-metal  →  semiconductor transition behavior in single-molecule junctions. Analysis of molecular projected self-consistent Hamiltonian, Mulliken population, and local density of states also reveals an important rule for realizing this transition behavior. Our research confirms that the hydrogenation of MnPc molecules can realize various molecular functionalities in unitary material background. (paper)

  3. An important rule for realizing metal → half-metal → semiconductor transition in single-molecule junctions

    Science.gov (United States)

    Zeng, Jing; Chen, Ke-Qiu; Long, Mengqiu

    2017-06-01

    Recently, Zhong et al (2015 Nano Lett. 15 8091) found that two additional hydrogen atoms can be adsorbed to the opposite aza-bridging nitrogen atoms of the manganese phthalocyanine (MnPc) macrocycle when exposed to H2. Thus the symmetry of the MnPc molecule is changed from 4-fold to 2-fold. Motivated by this recent experiment, we theoretically investigate a MnPc-based single-molecule junction in this work and propose a simple and reliable way to realize the transition of its electronic properties. On the basis of spin-polarized density-functional theory calculations combined with the Keldysh nonequilibrium Green’s technique, we find that the gradual hydrogenation in MnPc molecules gives rise to the changes of the hardness of the electron density and spin-selective orbital decoupling, which eventually leads to the realization of the first ever metal  →  half-metal  →  semiconductor transition behavior in single-molecule junctions. Analysis of molecular projected self-consistent Hamiltonian, Mulliken population, and local density of states also reveals an important rule for realizing this transition behavior. Our research confirms that the hydrogenation of MnPc molecules can realize various molecular functionalities in unitary material background.

  4. Sensorless control of low-cost single-phase hybrid switched reluctance motor drive

    DEFF Research Database (Denmark)

    Jakobsen, Uffe; Lu, Kaiyuan; Rasmussen, Peter Omand

    2013-01-01

    This paper presents a sensorless-controlled, low-cost, low-power, variable-speed drive system suitable for fan and pump applications. The main advantages of this drive system are the low system cost, simple converter structure, and simple but robust sensorless control technique. The drive motor...... is a special Hybrid Switched Reluctance Motor (HSRM). The proposed sensorless control method utilizes beneficially the stator side permanent magnet field and its performance is motor parameter independent. The unique low-cost drive system solution, simple and robust sensorless control features of this drive...

  5. Design comparison of single phase outer and inner-rotor hybrid excitation flux switching motor for hybrid electric vehicles

    Science.gov (United States)

    Mazlan, Mohamed Mubin Aizat; Sulaiman, Erwan; Husin, Zhafir Aizat; Othman, Syed Muhammad Naufal Syed; Khan, Faisal

    2015-05-01

    In hybrid excitation machines (HEMs), there are two main flux sources which are permanent magnet (PM) and field excitation coil (FEC). These HEMs have better features when compared with the interior permanent magnet synchronous machines (IPMSM) used in conventional hybrid electric vehicles (HEVs). Since all flux sources including PM, FEC and armature coils are located on the stator core, the rotor becomes a single piece structure similar with switch reluctance machine (SRM). The combined flux generated by PM and FEC established more excitation fluxes that are required to produce much higher torque of the motor. In addition, variable DC FEC can control the flux capabilities of the motor, thus the machine can be applied for high-speed motor drive system. In this paper, the comparisons of single-phase 8S-4P outer and inner rotor hybrid excitation flux switching machine (HEFSM) are presented. Initially, design procedures of the HEFSM including parts drawing, materials and conditions setting, and properties setting are explained. Flux comparisons analysis is performed to investigate the flux capabilities at various current densities. Then the flux linkages of PM with DC FEC of various DC FEC current densities are examined. Finally torque performances are analyzed at various armature and FEC current densities for both designs. As a result, the outer-rotor HEFSM has higher flux linkage of PM with DC FEC and higher average torque of approximately 10% when compared with inner-rotor HEFSM.

  6. Single Ion transient-IBIC analyses of semiconductor devices using a cryogenic temperature stage

    International Nuclear Information System (INIS)

    Laird, J.S.; Bardos, R.; Legge, G.J.F.; Jagadish, C.

    1998-01-01

    A new Transient - IBIC data acquisition and analysis system at MARC is described. A discussion on the need for single ion control and temperature control is also given. The recorded signal is used as the trigger for beam pulsing. The new cryostatic temperature control stage is introduced. Data is presented on line profiles across the edge of a Au-Si junction collected over the temperature range of 25-300K using a developed C-V and I-V variable temperature stage incorporating a liquid helium cryostat. It demonstrates the potential improvements in spatial resolution in materials of long lifetime by mapping on timing windows around the prompt charge component in the charge transient

  7. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    CERN Document Server

    Epperlein, Peter W

    2013-01-01

    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  8. Single Ion transient-IBIC analyses of semiconductor devices using a cryogenic temperature stage

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.; Legge, G.J.F. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Jagadish, C. [Australian National Univ., Canberra, ACT (Australia). School of Physics, Electronic Materials Engineering

    1998-06-01

    A new Transient - IBIC data acquisition and analysis system at MARC is described. A discussion on the need for single ion control and temperature control is also given. The recorded signal is used as the trigger for beam pulsing. The new cryostatic temperature control stage is introduced. Data is presented on line profiles across the edge of a Au-Si junction collected over the temperature range of 25-300K using a developed C-V and I-V variable temperature stage incorporating a liquid helium cryostat. It demonstrates the potential improvements in spatial resolution in materials of long lifetime by mapping on timing windows around the prompt charge component in the charge transient. 2 figs.

  9. Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

    Science.gov (United States)

    Sarau, George; Heilmann, Martin; Bashouti, Muhammad; Latzel, Michael; Tessarek, Christian; Christiansen, Silke

    2017-03-22

    While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

  10. Magnetic switching

    International Nuclear Information System (INIS)

    Kirbie, H.C.

    1989-01-01

    Magnetic switching is a pulse compression technique that uses a saturable inductor (reactor) to pass pulses of energy between two capacitors. A high degree of pulse compression can be achieved in a network when several of these simple, magnetically switched circuits are connected in series. Individual inductors are designed to saturate in cascade as a pulse moves along the network. The technique is particularly useful when a single-pulse network must be very reliable or when a multi-pulse network must operate at a high pulse repetition frequency (PRF). Today, magnetic switches trigger spark gaps, sharpen the risetimes of high energy pulses, power large lasers, and drive high PRF linear induction accelerators. This paper will describe the technique of magnetic pulse compression using simple networks and design equations. A brief review of modern magnetic materials and of their role in magnetic switch design will be presented. 12 refs., 8 figs

  11. Sensorless Control of Low-cost Single-phase Hybrid Switched Reluctance Motor Drive

    DEFF Research Database (Denmark)

    Jakobsen, Uffe; Lu, Kaiyuan; Rasmussen, Peter Omand

    2015-01-01

    This paper presents a sensorless-controlled, low-cost, low-power, and variable-speed drive system suitable for fan and pump applications. The main advantages of this drive system are the low system cost, simple converter structure, and simple but robust sensorless control technique. The drive motor...... is a special hybrid switched reluctance motor. The proposed sensorless control method beneficially utilizes the stator side PM field and its performance is motor parameter independent. The unique low-cost drive system solution, simple and robust sensorless control features of this drive system, is demonstrated...... in detail in this paper. Important design details for practical implementation of the sensorless control algorithm are included. The complete drive system performance is validated using a prototype drive system....

  12. Single-walled carbon nanohorns decorated with semiconductor quantum dots to evaluate intracellular transport

    Science.gov (United States)

    Zimmermann, Kristen A.; Inglefield, David L.; Zhang, Jianfei; Dorn, Harry C.; Long, Timothy E.; Rylander, Christopher G.; Rylander, M. Nichole

    2014-01-01

    Single-walled carbon nanohorns (SWNHs) have great potential to enhance thermal and chemotherapeutic drug efficiencies for cancer therapies. Despite their diverse capabilities, minimal research has been conducted so far to study nanoparticle intracellular transport, which is an important step in designing efficient therapies. SWNHs, like many other carbon nanomaterials, do not have inherent fluorescence properties making intracellular transport information difficult to obtain. The goals of this project were to (1) develop a simple reaction scheme to decorate the exohedral surface of SWNHs with fluorescent quantum dots (QDs) and improve conjugate stability, and (2) evaluate SWNH-QD conjugate cellular uptake kinetics and localization in various cancer cell lines of differing origins and morphologies. In this study, SWNHs were conjugated to CdSe/ZnS core/shell QDs using a unique approach to carbodiimide chemistry. Transmission electron microscopy and electron dispersive spectroscopy verified the conjugation of SWNHs and QDs. Cellular uptake kinetics and efficiency were characterized in three malignant cell lines: U-87 MG (glioblastoma), MDA-MB-231 (breast cancer), and AY-27 (bladder transitional cell carcinoma) using flow cytometry. Cellular distribution was verified by confocal microscopy, and cytotoxicity was also evaluated using an alamarBlue assay. Results indicate that cellular uptake kinetics and efficiency are highly dependent on cell type, highlighting the significance of studying nanoparticle transport at the cellular level. Nanoparticle intracellular transport investigations may provide information to optimize treatment parameters (e.g., SWNH concentration, treatment time, etc.) depending on tumor etiology.

  13. Distance dependence of the energy transfer rate from a single semiconductor nanostructure to graphene.

    Science.gov (United States)

    Federspiel, François; Froehlicher, Guillaume; Nasilowski, Michel; Pedetti, Silvia; Mahmood, Ather; Doudin, Bernard; Park, Serin; Lee, Jeong-O; Halley, David; Dubertret, Benoît; Gilliot, Pierre; Berciaud, Stéphane

    2015-02-11

    The near-field Coulomb interaction between a nanoemitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, (i) zero-dimensional CdSe/CdS nanocrystals and (ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances d, the energy transfer rate from individual nanocrystals to graphene decays as 1/d(4). In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.

  14. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear...

  15. Determination of trace inorganic anions in weak acids by single-pump column-switching ion chromatography.

    Science.gov (United States)

    Zhu, Haibao; Chen, Huadong; Zhong, Yingying; Ren, Dandan; Qian, Yaling; Tang, Hongfang; Zhu, Yan

    2010-08-01

    Ion chromatography has been proposed for the determination of three common inorganic anions (chloride, nitrate, and sulfate) in nine weak acids (tartaric acid, citric acid, formic acid, acetic acid, metacetonic acid, butyric acid, butanedioic acid, hexafluorophosphoric acid, and salicylic acid) using a single pump, two valves, a single eluent, and a single conductivity detector. The present system uses ion exclusion, concentrator, and anion-exchange columns connected in series via 6-port and 10-port valves in a Dionex ICS-2100 ion chromatograph. The valves were switched for the determination of three inorganic anions from weak acids in a single chromatographic run. Sample matrices of weak acids with a series of concentrations can be investigated. Complete separations of the previously mentioned anions are demonstrated within 40 min. Under the optimum conditions, the relative standard deviation values ranged from 1.3 to 3.8%. The detection limits of the three inorganic anions (S/N = 3) were in the range of 0.3-1.7 microg/L. The recoveries were in the range of 75.2-117.6%. With this system, automation for routine analysis, short analysis time, and low cost can be achieved.

  16. Single-frequency injection-seeded Q-switched Ho:YAG laser

    Science.gov (United States)

    Wang, Qing; Gao, Chunqing; Na, Quanxin; Zhang, Yixuan; Ye, Qing; Gao, Mingwei

    2017-04-01

    An injection-seeded Ho:YAG laser at 2090 nm with changeable pulse repetition frequency (PRF) is demonstrated. Containing a Ho:YAG nonplanar ring oscillator (NPRO) seed, a slave laser, and a single-pass amplifier, the laser delivered single-frequency pulses with energy ranging from 31.4 to 12.7 mJ. The corresponding pulse duration and PRF varied between 102-215 ns and 150-750 Hz, respectively. To the best of our knowledge, this is the highest PRF ever obtained from a single-frequency Ho:YAG laser.

  17. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    International Nuclear Information System (INIS)

    Heath, Robert M.; Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-01-01

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime

  18. Magnetization dynamics of single-domain nanodots and minimum energy dissipation during either irreversible or reversible switching

    Science.gov (United States)

    Madami, Marco; Gubbiotti, Gianluca; Tacchi, Silvia; Carlotti, Giovanni

    2017-11-01

    Single- or multi-layered planar magnetic dots, with lateral dimensions ranging from tens to hundreds of nanometers, are used as elemental switches in current and forthcoming devices for information and communication technology (ICT), including magnetic memories, spin-torque oscillators and nano-magnetic logic gates. In this review article, we will first discuss energy dissipation during irreversible switching protocols of dots of different dimensions, ranging from a few tens of nanometers to the micrometric range. Then we will focus on the fundamental energy limits of adiabatic (slow) erasure and reversal of a magnetic nanodot, showing that dissipationless operation is achievable, provided that both dynamic reversibility (arbitrarily slow application of external fields) and entropic reversibility (no free entropy increase) are insured. However, recent theoretical and experimental tests of magnetic-dot erasure reveal that intrinsic defects related to materials imperfections such as roughness or polycrystallinity, may cause an excess of dissipation if compared to the minimum theoretical limit. We will conclude providing an outlook on the most promising strategies to achieve a new generation of power-saving nanomagnetic logic devices based on clusters of interacting dots and on straintronics.

  19. Electrochemical Control of Single-Molecule Conductance by Fermi- Level Tuning and Conjugation Switching

    DEFF Research Database (Denmark)

    Baghernejad, Masoud; Zhao, Xiaotao; Ørnsø, Kristian Baruël

    2014-01-01

    Controlling charge transport through a single molecule connected to metallic electrodes remains one of the most fundamental challenges of nanoelectronics. Here we use electrochemical gating to reversibly tune the conductance of two different organic molecules, both containing anthraquinone (AQ...

  20. Peptide-coated semiconductor quantum dots and their applications in biological imaging of single molecules in live cells and organisms

    Science.gov (United States)

    Pinaud, Fabien Florent

    2007-12-01

    A new surface chemistry has been developed for the solubilization and biofunctionalization of inorganic semiconductor nanocrystals fluorescent probes, also known as quantum dots. This chemistry is based on the surface coating of quantum dots with custom-designed polycysteine peptides and yields water-soluble, small, monodispersed and colloidally stable probes that remain bright and photostable in complex biological milieus. This peptide coating strategy was successfully tested on several types of core and core-shell quantum dots emitting from the visible (e.g. CdSe/ZnS) to the NIR spectrum range (e.g. CdTe/CdSe/ZnS). By taking advantage of the versatile physico-chemical properties of peptides, a peptide "toolkit" was designed and employed to impart several biological functions to individual quantum dots and control their biochemical activity at the nanometer scale. These biofunctionalized peptide-coated quantum dots were exploited in very diverse biological applications. Near-infrared emitting quantum dot probes were engineered with optimized blood circulation and biodistribution properties for in vivo animal imaging. Visible emitting quantum dots were used for single molecule tracking of raft-associated GPI-anchored proteins in live cells. This last application revealed the presence of discrete and non-caveolar lipid microdomains capable of impeding free lateral diffusions in the plasma membrane of Hela cells. Imaging and tracking of peptide-coated quantum dots provided the first direct evidence that microdomains having the composition and behavior expected for lipid rafts can induce molecular compartmentalization in the membrane of living cells.

  1. An I-integral method for crack-tip intensity factor variation due to domain switching in ferroelectric single-crystals

    Science.gov (United States)

    Yu, Hongjun; Wang, Jie; Shimada, Takahiro; Wu, Huaping; Wu, Linzhi; Kuna, Meinhard; Kitamura, Takayuki

    2016-09-01

    In the present study, an I-integral method is established for solving the crack-tip intensity factors of ferroelectric single-crystals. The I-integral combined with the phase field model is successfully used to investigate crack-tip intensity factor variations due to domain switching in ferroelectricity subjected to electromechanical loadings, which exhibits several advantages over previous methods based on small-scale switching. First, the shape of the switching zone around a crack tip is predicted by the time-dependent Ginzburg-Landau equation, which does not require preset energy-based switching criterion. Second, the I-integral can directly solve the crack-tip intensity factors and decouple the crack-tip intensity factors of different modes based on superimposing an auxiliary state onto an actual state. Third, the I-integral is area-independent, namely, the I-integral is not affected by the integral area size, the polarization distributions, or domain walls. This makes the I-integral applicable to large-scale domain switching. To this end, the electro-elastic field intensity factors of an impermeable crack in PbTiO3 ferroelectric single crystals are evaluated under electrical, mechanical, and combined loading. The intensity factors obtained by the I-integral agree well with those obtained by the extrapolation technique. From numerical results, the following conclusions can be drawn with respect to fracture behavior of ferroelectrics under large-scale switching. Under displacement controlled mechanical loading, the stress intensity factors (SIFs) decrease monotonically due to the domain switching process, which means a crack tip shielding or effective switching-induced toughening occurs. If an external electric field is applied, the electric displacement intensity factor (EDIF) increases in all cases, i.e., the formed domain patterns enhance the electric crack tip loading. The energy release rate, expressed by the crack-tip J-integral, is reduced by the domain

  2. Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

    Directory of Open Access Journals (Sweden)

    Christoph Schreyvogel

    2016-11-01

    Full Text Available In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV− and a nuclear spin (of 15N or 13C for example of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.

  3. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  4. Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

    DEFF Research Database (Denmark)

    Stasch, R.; Hey, R.; Asche, M.

    1996-01-01

    Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n–-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime...

  5. A single molecule switch based on two Pd nanocrystals linked by a ...

    Indian Academy of Sciences (India)

    Abstract. Tunneling spectroscopy measurements have been carried out on a single mole- cule device formed by two Pd nanocrystals (dia. ~5 nm) electronically coupled by a con- ducting molecule, dimercaptodiphenylacetylene. The I–V data, obtained by positioning the tip over a nanocrystal electrode, exhibit negative ...

  6. A single molecule switch based on two Pd nanocrystals linked by a ...

    Indian Academy of Sciences (India)

    Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia. ∼ 5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. The – data, obtained by positioning the tip over a nanocrystal electrode, exhibit negative differential ...

  7. Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2015-01-01

    The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

  8. Single methyl groups can act as toggle switches to specify transmembrane protein-protein interactions

    DEFF Research Database (Denmark)

    He, Li; Steinocher, Helena; Shelar, Ashish

    2017-01-01

    of leucine and isoleucine (called LIL traptamers) that specifically activate the erythropoietin receptor (EPOR) in mouse cells to confer growth factor independence. We discovered that the placement of a single side chain methyl group at specific positions in a traptamer determined whether it associated......Transmembrane domains (TMDs) engage in protein-protein interactions that regulate many cellular processes, but the rules governing the specificity of these interactions are poorly understood. To discover these principles, we analyzed 26-residue model transmembrane proteins consisting exclusively...... productively with the TMD of the human EPOR, the mouse EPOR, or both receptors. Association of the traptamers with the EPOR induced EPOR oligomerization in an orientation that stimulated receptor activity. These results highlight the high intrinsic specificity of TMD interactions, demonstrate that a single...

  9. Single-photon all-optical switching using coupled microring resonators

    Indian Academy of Sciences (India)

    is the self-coupling coefficient of the coupler. a1 = exp(−α1l1/2) and φ0 = β1l1 are the single-pass field transmission and linear phase shift in the ring, respectively. α1 is the intensity attenuation coefficient, β1 is the wave propagation constant associated with the fundamental mode supported by the ring waveguide, and l1 is.

  10. Practical switching power supply design

    CERN Document Server

    Brown, Martin C

    1990-01-01

    Take the ""black magic"" out of switching power supplies with Practical Switching Power Supply Design! This is a comprehensive ""hands-on"" guide to the theory behind, and design of, PWM and resonant switching supplies. You'll find information on switching supply operation and selecting an appropriate topology for your application. There's extensive coverage of buck, boost, flyback, push-pull, half bridge, and full bridge regulator circuits. Special attention is given to semiconductors used in switching supplies. RFI/EMI reduction, grounding, testing, and safety standards are also deta

  11. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  12. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  13. Switching features of GMO single crystals by contrary motion of pair planar domain boundaries

    International Nuclear Information System (INIS)

    Alekseev, A.N.

    2003-01-01

    Gadolinium molybdate single crystal specimens in the form of square plates 1.2 mm thick, which provide similar conditions of nucleation of domains with differently oriented planar domain boundaries (PDB), are used to study processes of total change-over of orientation states by compressing mechanical action applied alternately to one of two pairs of opposite end faces of the specimen. It is revealed that successive acts of such change-over are always carried out by PDB pairs of alternating mutually orthogonal orientation. A closing stage for every successive change-over is realized through a collapse of either wedge-like or lenticular domain [ru

  14. A single mutation in Taiwanese H6N1 influenza hemagglutinin switches binding to human-type receptors

    Energy Technology Data Exchange (ETDEWEB)

    de Vries, Robert P.; Tzarum, Netanel; Peng, Wenjie; Thompson, Andrew J.; Ambepitiya Wickramasinghe, Iresha N.; de la Pena, Alba T. Torrents; van Breemen, Marielle J.; Bouwman, Kim M.; Zhu, Xueyong; McBride, Ryan; Yu, Wenli; Sanders, Rogier W.; Verheije, Monique H.; Wilson, Ian A.; Paulson, James C.

    2017-07-10

    In June 2013, the first case of human infection with an avian H6N1 virus was reported in a Taiwanese woman. Although this was a single non-fatal case, the virus continues to circulate in Taiwanese poultry. As with any emerging avian virus that infects humans, there is concern that acquisition of human-type receptor specificity could enable transmission in the human population. Despite mutations in the receptor-binding pocket of the human H6N1 isolate, it has retained avian-type (NeuAcα2-3Gal) receptor specificity. However, we show here that a single nucleotide substitution, resulting in a change from Gly to Asp at position 225 (G225D), completely switches specificity to human-type (NeuAcα2-6Gal) receptors. Significantly, G225D H6 loses binding to chicken trachea epithelium and is now able to bind to human tracheal tissue. Structural analysis reveals that Asp225 directly interacts with the penultimate Gal of the human-type receptor, stabilizing human receptor binding.

  15. Analysis of trace inorganic anions in weak acid salts by single pump cycling-column-switching ion chromatography.

    Science.gov (United States)

    Huang, Zhongping; Ni, Chengzhu; Zhu, Zhuyi; Pan, Zaifa; Wang, Lili; Zhu, Yan

    2015-05-01

    The application of ion chromatography with the single pump cycling-column-switching technique was described for the analysis of trace inorganic anions in weak acid salts within a single run. Due to the hydrogen ions provided by an anion suppressor electrolyzing water, weak acid anions could be transformed into weak acids, existing as molecules, after passing through the suppressor. Therefore, an anion suppressor and ion-exclusion column were adopted to achieve on-line matrix elimination of weak acid anions with high concentration for the analysis of trace inorganic anions in weak acid salts. A series of standard solutions consisting of target anions of various concentrations from 0.005 to 10 mg/L were analyzed, with correlation coefficients r ≥ 0.9990. The limits of detection were in the range of 0.67 to 1.51 μg/L, based on the signal-to-noise ratio of 3 and a 25 μL injection volume. Relative standard deviations for retention time, peak area, and peak height were all less than 2.01%. A spiking study was performed with satisfactory recoveries between 90.3 and 104.4% for all anions. The chromatographic system was successfully applied to the analysis of trace inorganic anions in five weak acid salts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Correction: Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-20

    Correction for 'Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material' by Xiao Zhu et al., Dalton Trans., 2018, DOI: 10.1039/c7dt04489e.

  17. Optical parametric generation by a simultaneously Q-switched mode-locked single-oscillator thulium-doped fiber laser in orientation-patterned gallium arsenide.

    Science.gov (United States)

    Donelan, Brenda; Kneis, Christian; Scurria, Giuseppe; Cadier, Benoît; Robin, Thierry; Lallier, Eric; Grisard, Arnaud; Gérard, Bruno; Eichhorn, Marc; Kieleck, Christelle

    2016-11-01

    Optical parametric generation is demonstrated in orientation-patterned gallium arsenide, pumped by a novel single-oscillator simultaneously Q-switched and mode-locked thulium-doped fiber laser, downconverting the pump radiation into the mid-infrared wavelength regime. The maximum output energy reached is greater than 2.0 μJ per pump pulse.

  18. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  19. Relaxation of a kinetic hole due to carrier-carrier scattering in multisubband single-quantum-well semiconductors

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe a theoretical model for carrier-carrier scattering in an inverted semiconductor quantum well structure using a multisubband diagram. The model includes all possible nonvanishing interaction terms within the static screening approximation, and it enables one to calculate accurately...

  20. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  1. Effect of semiconductor polymer backbone structures and side-chain parameters on the facile separation of semiconducting single-walled carbon nanotubes from as-synthesized mixtures

    Science.gov (United States)

    Lee, Dennis T.; Chung, Jong Won; Park, Geonhee; Kim, Yun-Tae; Lee, Chang Young; Cho, Yeonchoo; Yoo, Pil J.; Han, Jae-Hee; Shin, Hyeon-Jin; Kim, Woo-Jae

    2018-01-01

    Semiconducting single-walled carbon nanotubes (SWNTs) show promise as core materials for next-generation solar cells and nanoelectronic devices. However, most commercial SWNT production methods generate mixtures of metallic SWNTs (m-SWNTs) and semiconducting SWNT (sc-SWNTs). Therefore, sc-SWNTs must be separated from their original mixtures before use. In this study, we investigated a polymer-based, noncovalent sc-SWNT separation approach, which is simple to perform and does not disrupt the electrical properties of the SWNTs, thus improving the performance of the corresponding sc-SWNT-based applications. By systematically investigating the effect that different structural features of the semiconductor polymer have on the separation of sc-SWNTs, we discovered that the length and configuration of the alkyl side chains and the rigidity of the backbone structure exert significant effects on the efficiency of sc-SWNT separation. We also found that electron transfer between the semiconductor polymers and sc-SWNTs is strongly affected by their energy-level alignment, which can be tailored by controlling the donor-acceptor configuration in the polymer backbone structures. Among the polymers investigated, the highly planar P8T2Z-C12 semiconductor polymer showed the best sc-SWNT separation efficiency and unprecedentedly strong electronic interaction with the sc-SWNTs, which is important for improving their performance in applications.

  2. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  3. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  4. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  5. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  6. Ecological forensics : Using single point stable isotope values to infer seasonal schedules of animals after two diet switches

    NARCIS (Netherlands)

    Jouta, Jeltje; Dietz, Maurine W.; Reneerkens, Jeroen; Piersma, Theunis; Rakhimberdiev, Eldar; Hallgrímsson, Gunnar T.; Pen, Ido

    2017-01-01

    Animals adjust to seasonal challenges in physical, behavioural and spatial ways. Such adjustments are commonly associated with diet changes that often can be characterised isotopically. We introduce the 'double diet switch model', with which the occurrence and timing of two subsequent diet switches

  7. Single Switch Nonisolated Ultra-Step-Up DC-DC Converter with an Integrated Coupled Inductor for High Boost Applications

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede

    2017-01-01

    duty cycle. Furthermore, a passive lossless clamp circuit recycles the leakage energy of the coupled magnetics and alleviates the voltage spikes across the main switch. This feature along with low stress on the switching device enables the designer to use a low voltage and low RDS-on MOSFET, which...

  8. Integrated Optoelectronic Switching Technology for Fiber-Optic Communications Networks

    National Research Council Canada - National Science Library

    Fan, Regis

    1998-01-01

    .... most of the effort in optical amplifier switch modules have been focused on monolithic switches in which the entire device is fabricated on an InP substrate together with the semiconductor optical amplifiers (SOAs...

  9. Fast processes in semiconductor optical amplifiers: theory and experiment

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2002-01-01

    We review the physical processes responsible for ultrafast gain and index dynamics in semiconductor optical amplifiers and discuss their impact on optical switching applications......We review the physical processes responsible for ultrafast gain and index dynamics in semiconductor optical amplifiers and discuss their impact on optical switching applications...

  10. TERRA and hnRNPA1 orchestrate an RPA-to-POT1 switch on telomeric single-stranded DNA.

    Science.gov (United States)

    Flynn, Rachel Litman; Centore, Richard C; O'Sullivan, Roderick J; Rai, Rekha; Tse, Alice; Songyang, Zhou; Chang, Sandy; Karlseder, Jan; Zou, Lee

    2011-03-24

    Maintenance of telomeres requires both DNA replication and telomere 'capping' by shelterin. These two processes use two single-stranded DNA (ssDNA)-binding proteins, replication protein A (RPA) and protection of telomeres 1 (POT1). Although RPA and POT1 each have a critical role at telomeres, how they function in concert is not clear. POT1 ablation leads to activation of the ataxia telangiectasia and Rad3-related (ATR) checkpoint kinase at telomeres, suggesting that POT1 antagonizes RPA binding to telomeric ssDNA. Unexpectedly, we found that purified POT1 and its functional partner TPP1 are unable to prevent RPA binding to telomeric ssDNA efficiently. In cell extracts, we identified a novel activity that specifically displaces RPA, but not POT1, from telomeric ssDNA. Using purified protein, here we show that the heterogeneous nuclear ribonucleoprotein A1 (hnRNPA1) recapitulates the RPA displacing activity. The RPA displacing activity is inhibited by the telomeric repeat-containing RNA (TERRA) in early S phase, but is then unleashed in late S phase when TERRA levels decline at telomeres. Interestingly, TERRA also promotes POT1 binding to telomeric ssDNA by removing hnRNPA1, suggesting that the re-accumulation of TERRA after S phase helps to complete the RPA-to-POT1 switch on telomeric ssDNA. Together, our data suggest that hnRNPA1, TERRA and POT1 act in concert to displace RPA from telomeric ssDNA after DNA replication, and promote telomere capping to preserve genomic integrity.

  11. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

    Science.gov (United States)

    Li, Zuo; Khaled Husain, Muhammad; Yoshimoto, Hiroyuki; Tani, Kazuki; Sasago, Yoshitaka; Hisamoto, Digh; Fletcher, Jonathan David; Kataoka, Masaya; Tsuchiya, Yoshishige; Saito, Shinichi

    2017-07-01

    The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both p-type and n-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.

  12. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  13. Spontaneously formed high-performance charge-transport layers of organic single-crystal semiconductors on precisely synthesized insulating polymers

    Science.gov (United States)

    Makita, Tatsuyuki; Sasaki, Masayuki; Annaka, Tatsuro; Sasaki, Mari; Matsui, Hiroyuki; Mitsui, Chikahiko; Kumagai, Shohei; Watanabe, Shun; Hayakawa, Teruaki; Okamoto, Toshihiro; Takeya, Jun

    2017-04-01

    Charge-transporting semiconductor layers with high carrier mobility and low trap-density, desired for high-performance organic transistors, are spontaneously formed as a result of thermodynamic phase separation from a blend of π-conjugated small molecules and precisely synthesized insulating polymers dissolved in an aromatic solvent. A crystal film grows continuously to the size of centimeters, with the critical conditions of temperature, concentrations, and atmosphere. It turns out that the molecular weight of the insulating polymers plays an essential role in stable film growth and interfacial homogeneity at the phase separation boundary. Fabricating the transistor devices directly at the semiconductor-insulator boundaries, we demonstrate that the mixture of 3,11-didecyldinaphtho[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene and poly(methyl methacrylate) with the optimized weight-average molecular weight shows excellent device performances. The spontaneous phase separation with a one-step fabrication process leads to a high mobility up to 10 cm2 V-1 s-1 and a low subthreshold swing of 0.25 V dec-1 even without any surface treatment such as self-assembled monolayer modifications on oxide gate insulators.

  14. A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

    Science.gov (United States)

    Gollan, Tamar H.; Goldrick, Matthew

    2018-01-01

    The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

  15. Modularized Three-Phase Semiconductor Transformer with Bidirectional Power Flow for Medium Voltage Application

    Directory of Open Access Journals (Sweden)

    Do-Hyun Kim

    2016-08-01

    Full Text Available This paper describes a prototype of modularized three-phase semiconductor transformer that was developed in the lab for feasibility study. The developed prototype is composed of three units of single-phase semiconductor transformer coupled in Y-connection. Each single-phase unit has multiple units of high-voltage high-frequency resonant AC–DC converter, a low-voltage hybrid-switching DC–DC converter, and a low-voltage hybrid-switching DC–AC inverter. Also, each single-phase unit has two digital signal processor (DSP boards to control converter operation and to acquire monitoring data. The monitoring system was developed based on LabView by using controller area network (CAN communication between the DSP board and the personal computer (PC. Through diverse experimental analyses it was verified that the prototype operates with proper performance under normal and sag conditions. The developed prototype confirms the possibility of fabricating a commercial high-voltage high-power semiconductor transformer by increasing the number of series-connected converter modules in high-voltage side and improving the system efficiency with a new switching device such as an SiC device.

  16. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    Science.gov (United States)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Char, Kookrin

    2016-05-01

    We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  17. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Hoon Min Kim

    2016-05-01

    Full Text Available We report p-doping of the BaSnO3 (BSO by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  18. Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

    Science.gov (United States)

    Yang, Jingjuan; Han, Xiaoxiao; Yuan, Peipei; Bian, Baoan; Wang, Yixiang

    2018-01-01

    We investigate the electronic transport properties of dihydroazulene (DHA) and vinylheptafulvene (VHF) molecule sandwiched between two carbon nanotubes using density functional theory and non-equilibrium Green's function. The device displays significantly switching behavior between DHA and VHF isomerizations. It is found the different substitution position of F in the molecule influences the switching ratio of device, which is analyzed by transmission spectra and molecular projected self-consistent Hamiltonian. The observed negative differential resistance effect is explained by transmission spectra and transmission eigenstates of transmission peak in the bias window. The observed reverse of current in VHF form in which two H atoms on the right side of the benzene ring of the molecule are replaced by F is explained by transmission spectra and molecule-electrode coupling with the varied bias. The results suggest that the reasonable substitution position of molecule may improve the switching ratio, displaying a potential application in future molecular circuit.

  19. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  20. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    Science.gov (United States)

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T.

    2015-01-01

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  1. All-optical switching of localized surface plasmon resonance in single gold nanosandwich using GeSbTe film as an active medium

    Energy Technology Data Exchange (ETDEWEB)

    Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Kihara, Y.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

    2015-01-19

    Localized surface plasmon resonance (LSPR) switching was investigated in a Au/GeSbTe/Au nanosandwich as a key active element for plasmonic integrated circuits and devices. Near-infrared single-particle spectroscopy was conducted to examine the interaction of a Au nanorod (AuNR) and Au film, between which a GeSbTe layer was incorporated as an active phase-change media. Numerical calculation revealed that hybridized modes of the AuNR and Au film exhibit a significant change of scattering intensity with the phase change. In particular, the antisymmetric (magnetic resonance) mode can be modulated effectively by the extinction coefficient of GST, as well as its refractive index. Experimental demonstration of the switching operation was performed by alternate irradiation with a picosecond pulsed laser for amorphization and a continuous wave laser for crystallization. Repeatable modulation was obtained by monitoring the scattering light around the LSPR peak at λ = 1070 nm.

  2. A Digital Sine-Weighted switched-Gm mixer for Single-Clock Power-Scalable parallel receivers

    NARCIS (Netherlands)

    Kasri, Reda; Klumperink, Eric A.M.; Cathelin, Philippe; Tournier, Eric; Nauta, Bram

    2017-01-01

    Abstract— This paper presents a mixed A/D architecture for parallel channelized RF receiver applications. Its power consumption scales with the number of active receivers and hence with the available overall data rate. A digital sine-weighted switched-Gm mixer with a DDFS per channel is proposed as

  3. Note: Compact, reusable inductive-storage-cum-opening-switch based 1.5 GW single-shot pulsed power generator

    Science.gov (United States)

    Shukla, Rohit; Shyam, Anurag

    2014-03-01

    The results of a very-compact (Marx generator-cum-inductor confined into 0.20 m cylindrical diameter and 0.75 m length) and light-weight (Marx generator used as primary energy source and opening switch of exploding wire) make device very attractive. Marx generator shape itself provides the desired inductance for the inductive storage.

  4. Ecological forensics: using single point stable isotope values to infer seasonal schedules of animals after two diet switches

    NARCIS (Netherlands)

    Jouta, J.; Dietz, M.W.; Reneerkens, J.; Piersma, T.; Rakhimberdiev, E.; Hallgrimsson, G.T.; Pen, I.

    2017-01-01

    1.Animals adjust to seasonal challenges in physical, behavioural and spatial ways. Such adjustments are commonly associated with diet changes that often can be characterised isotopically.2.We introduce the ‘double diet switch model’, with which the occurrence and timing of two subsequent diet

  5. CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

    Science.gov (United States)

    Chung, In; Song, Jung-Hwan; Im, Jino; Androulakis, John; Malliakas, Christos D; Li, Hao; Freeman, Arthur J; Kenney, John T; Kanatzidis, Mercouri G

    2012-05-23

    CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise

  6. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  7. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  8. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  9. Development of a Single-Frequency Narrow Linewidth 1.5mm Semiconductor Laser Suitable for Spaceflight Operation Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Many space applications rely on the utilization of Light Detection and Raging (LIDAR) techniques. A key component of any LIDAR system is the laser source. Single...

  10. Monitoring Cellular Interactions during T Cell Activation at the Single Molecule Level Using Semiconductor Quantum-Dots

    National Research Council Canada - National Science Library

    Weiss, Shimon; Witte, Owen; Bentolila, Laurent; Pinaud, Fabien; Tsay, James; Radu, Caius; Wang, Lili

    2005-01-01

    ...) were developed. Two high-affinity targeting "velcro-pairs" based on avidin-biotin and fluorescine-antibody interactions were demonstrated and used to specifically target single proteins in membranes of live cells...

  11. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  12. Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-13

    Photoelectric dual-function features in bulk crystals or flexible thin films make them excellent candidates for important and thriving applications in storage, sensing and other information fields. Based on superior advantages such as easy and environmentally friendly processing, mechanical flexibility, and ability to fabricate films and bulk single crystals; we designed a type of molecular material with a photoelectric multi-function switch, [N(NH 2 CH 2 CH 2 ) 3 ] 2 Mn 2 Cl 12 (compound 1), which exhibits intriguing temperature-dependent dielectric and red emission switchable characteristics. This material perfectly explains the advantages of molecular materials, while 1 can also be used to fabricate a transparent unidirectional film with ultra-flexibility. Moreover, this material shows the highest record in signal contrast of ∼5 (exceeding all the known molecular materials/crystalline switches, revealing its potential to obtain high-efficiency signal-to-noise ratio), sensitive dielectric bi-stability, and excellent switching anti fatigue. These features give it a high application value in integrated circuits, optoelectronic seamless integration devices and flexible multifunctional devices.

  13. Effectiveness of Antiretroviral Therapy in Individuals Who for Economic Reasons Were Switched From a Once-Daily Single-Tablet Regimen to a Triple-Tablet Regimen

    DEFF Research Database (Denmark)

    Engsig, Frederik N; Gerstoft, Jan; Helleberg, Marie

    2014-01-01

    BACKGROUND: To assess the impact on virological outcomes of a switch from branded single-tablet regimen (STR) including tenofovir, efavirenz, and emtricitabine (STR-TEE) to generic triple-tablet regimen (TTR), including tenofovir, efavirenz, and lamivudine (TTR-TEL), which was implemented on April...... April 1, 2011 to March 31, 2012 (n = 56) and cART-experienced HIV patients who were on STR-TEE from April 1, 2010 (n = 356) or were switched from STR-TEE to TTR-TEL after April 1, 2011 (n = 512). We estimated the fraction with detectable HIV-RNA, development of the 184V/I resistance mutations, and time...... to switch of cART. Approximately 96.2% of cART-experienced patients on STR-TEE were shifted to TTR-TEL after April 1, 2011. For the naive STR-TEE and TTR-TEL patients, the fractions with detectable HIV-RNA at week 48 were 7.0% and 8.3% and for the cART experienced 4.0% and 4.4%, respectively. The 184V...

  14. The Effects of Different Electron-Phonon Couplings on the Spectral and Transport Properties of Small Molecule Single-Crystal Organic Semiconductors

    Directory of Open Access Journals (Sweden)

    Carmine Antonio Perroni

    2014-03-01

    Full Text Available Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene, aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low-frequency inter-molecular and high-frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes. For rubrene, a very accurate analysis in the relevant experimental configuration has allowed for the clarification of the origin of the temperature-dependent mobility observed in these organic semiconductors. With increasing temperature, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions has been calculated, including vertex corrections that give rise to a transport lifetime one order of magnitude smaller than the spectral lifetime of the states involved in the transport mechanism. The mobility always exhibits a power-law behavior as a function of temperature, in agreement with experiments in rubrene. In systems gated with polarizable dielectrics, the electron coupling to interface vibrational modes of the gate has to be included in addition to the intrinsic electron-phonon interaction. While the intrinsic bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the coupling with interface modes is dominant for the

  15. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Malic, Ermin

    2008-09-02

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  16. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    International Nuclear Information System (INIS)

    Malic, Ermin

    2008-01-01

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  17. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  18. A novel offset cancellation based on parasitic-insensitive switched-capacitor sensing circuit for the out-of-plane single-Gimbaled decoupled CMOS-MEMS gyroscope.

    Science.gov (United States)

    Chang, Ming-Hui; Huang, Han-Pang

    2013-03-14

    This paper presents a novel parasitic-insensitive switched-capacitor (PISC) sensing circuit design in order to obtain high sensitivity and ultra linearity and reduce the parasitic effect for the out-of-plane single-gimbaled decoupled CMOS-MEMS gyroscope (SGDG). According to the simulation results, the proposed PISC circuit has better sensitivity and high linearity in a wide dynamic range. Experimental results also show a better performance. In addition, the PISC circuit can use signal processing to cancel the offset and noise. Thus, this circuit is very suitable for gyroscope measurement.

  19. A Novel Offset Cancellation Based on Parasitic-Insensitive Switched-Capacitor Sensing Circuit for the Out-of-Plane Single-Gimbaled Decoupled CMOS-MEMS Gyroscope

    Science.gov (United States)

    Chang, Ming-Hui; Huang, Han-Pang

    2013-01-01

    This paper presents a novel parasitic-insensitive switched-capacitor (PISC) sensing circuit design in order to obtain high sensitivity and ultra linearity and reduce the parasitic effect for the out-of-plane single-gimbaled decoupled CMOS-MEMS gyroscope (SGDG). According to the simulation results, the proposed PISC circuit has better sensitivity and high linearity in a wide dynamic range. Experimental results also show a better performance. In addition, the PISC circuit can use signal processing to cancel the offset and noise. Thus, this circuit is very suitable for gyroscope measurement. PMID:23493122

  20. Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

    Science.gov (United States)

    Peng, Kaung-Jay; Wu, Chun-Lung; Lin, Yung-Hsiang; Wang, Hwai-Yung; Cheng, Chih-Hsien; Chi, Yu-Chieh; Lin, Gong-Ru

    2018-01-01

    Using the evanescent-wave saturation effect of hydrogen-free low-temperature synthesized few-layer graphene covered on the cladding region of a side-polished single-mode fiber, a blue pump/infrared probe-based all-optical switch is demonstrated with specific wavelength-dependent probe modulation efficiency. Under the illumination of a blue laser diode at 405 nm, the few-layer graphene exhibits cross-gain modulation at different wavelengths covering the C- and L-bands. At a probe power of 0.5 mW, the L-band switching throughput power variant of 16 μW results in a probe modulation depth of 3.2%. Blue shifting the probe wavelength from 1580 to 1520 nm further enlarges the switching throughput power variant to 24 mW and enhances the probe modulation depth to 5%. Enlarging the probe power from 0.5 to 1 mW further enlarges the switching throughput power variant from 25 to 58 μW to promote its probe modulation depth of up to 5.8% at 1520 nm. In contrast, the probe modulation depth degrades from 5.1% to 1.2% as the pumping power reduces from 85 to 24 mW, which is attributed to the saturable absorption of the few-layer graphene-based evanescent-wave absorber. The modulation depth at wavelength of 1550 nm under a probe power of 1 mW increases from 1.2% to 5.1%, as more carriers can be excited when increasing the blue laser power from 24 to 85 mW, whereas it decreases from 5.1% to 3.3% by increasing the input probe power from 1 to 2 mW to show an easier saturated condition at longer wavelength.

  1. High-power actively Q-switched single-mode 1342 nm Nd:YVO4 ring laser, injection-locked by a cw single-frequency microchip laser.

    Science.gov (United States)

    Koch, Peter; Bartschke, Juergen; L'huillier, Johannes A

    2015-11-30

    In this paper we report on the realization of a single-mode Q-switched Nd:YVO4 ring laser at 1342 nm. Unidirectional and single-mode operation of the ring laser is achieved by injection-locking with a continuous wave Nd:YVO4 microchip laser, emitting a single-frequency power of up to 40 mW. The ring laser provides a single-mode power of 13.9 W at 10 kHz pulse repetition frequency with a pulse duration of 18.2 ns and an excellent beam quality (M2 laser, a power of 8.7 W at 671 nm with a pulse duration of 14.8 ns and a beam propagation factor of M2 < 1.1 is obtained. The 671 nm radiation features a long-term spectral width of 75 MHz.

  2. Bianthrone in a Single-Molecule Junction: Conductance Switching with a Bistable Molecule Facilitated by Image Charge Effects

    DEFF Research Database (Denmark)

    Bjørnholm, Thomas

    2010-01-01

    isomerization events. Temperature dependence of the switching rate allows for an estimate of the activation energy of the process, on the order of 120 +/- 50 meV. Quantum-chemical calculations of the potential energy relief of neutral bianthrone and its anion, including identification of transition states......, yields the isolated molecule isomerization barriers too high vs the previous estimate, though compatible with previous experimental studies in solution. Nevertheless, we show that the attraction of the anion in the vicinity of the metal surface by its image charge can change the energetic landscape...

  3. Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

    Science.gov (United States)

    Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

    2018-01-01

    In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

  4. Submicrosecond Power-Switching Test Circuit

    Science.gov (United States)

    Folk, Eric N.

    2006-01-01

    A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a

  5. Photocatalytic engineering of single-walled carbon nanotubes: from metal-to-semiconductor conversion to cutting and patterning.

    Science.gov (United States)

    Nie, Yufeng; Zhang, Liming; Wu, Di; Chen, Yubin; Zhang, Guoming; Xie, Qin; Liu, Zhongfan

    2013-04-22

    With a TiO2 -based photocatalytic approach, both an arbitrary geometry tailoring of single-walled carbon nanotubes (SWCNTs) on various substrates and the conversion of metallic to semiconducting SWCNTs are demonstrated. Taking advantage of the selectivity on the diameter and metallicity of SWCNTs, 100% depletable SWCNT-based field-effect transistors are achieved, with Ion /Ioff improvements up to five orders of magnitude. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Probing single-molecule electron-hole transfer dynamics at a molecule-NiO semiconductor nanocrystalline interface.

    Science.gov (United States)

    Dhital, Bharat; Rao, Vishal Govind; Lu, H Peter

    2017-07-14

    Interfacial charge transfer dynamics in dye-sensitized NiO nanoparticles are being investigated for photocathodes in p-type dye-sensitized solar cells. In the photoreaction, after fast electron transfer from NiO to a molecule, the recombination of the hole in the nanoparticles with the electron in a reduced molecule plays an important role in the charge separation process and solar energy harvesting. Nevertheless, knowledge of the interfacial charge recombination (CR) rate and its mechanism is still limited due to the complex photoinduced electron and hole dynamics and lack of characterization of the inhomogeneity of the dynamics. Here, we report our work on probing interfacial charge recombination dynamics in Zn(ii)-5,10,15,20-tetra(3-carboxyphenyl)porphyrin (m-ZnTCPP) dye-sensitized NiO nanoparticles by correlating single-molecule fluorescence blinking dynamics with charge transfer dynamics using single-molecule photon-stamping spectroscopy. The correlated analyses of single-molecule fluorescence intensity, lifetime, and blinking reveal the intrinsic distribution and temporal fluctuation of interfacial charge transfer reactivity, which are closely related to site-specific molecular interactions and dynamics.

  7. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

  8. 10 mJ single-frequency, injection-seeded Q-switched Er:YAG laser pumped by a 1470 nm fiber-coupled LD

    Science.gov (United States)

    Gao, C. Q.; Shi, Y.; Ye, Q.; Wang, S.; Na, Q. X.; Wang, Q.; Gao, M. W.

    2018-02-01

    A 1645 nm injection-seeded Q-switched Er:YAG laser resonantly pumped by a 1470 nm fiber-coupled laser diode is demonstrated with a non-planar ring oscillator as a seed laser to realize the single-frequency operation. The maximum output pulse energy of the laser is 10.1 mJ, corresponding to a pulse width of 205 ns at a repetition rate of 200 Hz. The half-width of the pulse spectrum is 2.44 MHz measured by a heterodyne technique. The fluctuation of the center frequency of the pulsed laser is 1.43 MHz (RMS) in 1 h. To the best of our knowledge, this is highest energy obtained from a single-frequency, injection-seeded Er:YAG laser pumped by a laser diode.

  9. Semiconductor/High-Tc-Superconductor Hybrid ICs

    Science.gov (United States)

    Burns, Michael J.

    1995-01-01

    Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

  10. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  11. Selenium semiconductor core optical fibers

    Directory of Open Access Journals (Sweden)

    G. W. Tang

    2015-02-01

    Full Text Available Phosphate glass-clad optical fibers containing selenium (Se semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  12. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  13. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  14. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  15. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Bi-photon imaging and diagnostics using ultra-small diagnostic probes engineered from semiconductor nanocrystals and single-domain antibodies

    Science.gov (United States)

    Hafian, Hilal; Sukhanova, Alyona; Chames, Patrick; Baty, Daniel; Pluot, Michel; Cohen, Jacques H. M.; Nabiev, Igor R.; Millot, Jean-Marc

    2012-10-01

    Semiconductor fluorescent quantum dots (QDs) have just demonstrated their numerous advantages over organic dyes in bioimaging and diagnostics. One of characteristics of QDs is a very large cross section of their twophoton absorption. A common approach to biodetection by means of QDs is to use monoclonal antibodies (mAbs) for targeting. Recently, we have engineered ultrasmall diagnostic nanoprobes (sdAb-QD) based on highly oriented conjugates of QDs with the single-domain antibodies (sdAbs) against cancer biomarkers. With a molecular weight of only 13 kDa (12-fold smaller than full-size mAbs) and extreme stability and capacity to refolding, sdAbs are the smallest functional Ab fragments capable of binding antigens with affinities comparable to those of conventional Abs. Ultrasmall diagnostic sdAb-QD nanoprobes were engineered through oriented conjugation of QDs with sdAbs. This study is the first to demonstrate the possibility of immunohistochemical imaging of colon carcinoma biomarkers with sdAb-QD conjugates by means of two-photon excitation. The optimal excitation conditions for imaging of the markers in clinical samples with sdAb-QD nanoprobes have been determined. The absence of sample autofluorescence significantly improves the sensitivity of biomarker detection with the use of the two-photon excitation diagnostic setup.

  17. Predicting the neural effect of switching from donepezil to galantamine based on single-photon emission computed tomography findings in patients with Alzheimer's disease.

    Science.gov (United States)

    Oka, Mizuki; Nakaaki, Shutaro; Negi, Atsushi; Miyata, Jun; Nakagawa, Atsuo; Hirono, Nobutsugu; Mimura, Masaru

    2016-03-01

    A number of neuroimaging studies have addressed the specific effect of treatment with cholinesterase inhibitors on the frontal lobe in patients with Alzheimer's disease (AD). However, the neural effects of cholinesterase inhibitors on both apathy and executive dysfunction remain unclear. We examined whether baseline regional cerebral blood flow, as determined by using single-photon emission computed tomography, is capable of predicting changes in apathy and executive dysfunction in response to AD patients switching from donepezil to galantamine therapy. We conducted a 24-week, prospective, open-label study of AD patients treated with galantamine who did not respond to previous treatment with donepezil. Single-photon emission computed tomography was performed at baseline, and behaviour and cognitive assessments including the Mini-Mental State Examination, the Japanese version of the Alzheimer's Disease Assessment Scale-cognitive subscale, the Frontal Assessment Battery, the Neuropsychiatry Inventory Brief Questionnaire Form, and the Dysexecutive Questionnaire were conducted at three time points (baseline and after 12 and 24 weeks of galantamine therapy). After galantamine therapy, the Neuropsychiatry Inventory Brief Questionnaire Form scores (apathy, irritability, and aberrant motor symptoms) and the Dysexecutive Questionnaire score improved significantly. The single-photon emission computed tomography findings showed that lower baseline regional cerebral blood flow values in several frontal areas, including the dorsolateral and ventrolateral prefrontal cortex, the anterior cingulate, and the orbitofrontal cortex, predicted greater reductions in the score for apathy (distress) on the Neuropsychiatry Inventory Brief Questionnaire Form and the Dysexecutive Questionnaire score after patients switched from donepezil to galantamine therapy. Our study suggests that galantamine therapy, unlike donepezil, is characterized by a dual mechanism of action that may increase

  18. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  19. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  20. Energy gaps, electronic structures, and x-ray spectroscopies of finite semiconductor single-walled carbon nanotubes.

    Science.gov (United States)

    Gao, Bin; Jiang, Jun; Wu, ZiYu; Luo, Yi

    2008-02-28

    We report hybrid density functional theory calculations for electronic structures of hydrogen-terminated finite single-walled carbon nanotubes (6,5) and (8,3) up to 100 nm in length. Gap states that are mainly arisen from the hydrogen-terminated edges have been found in (8,3) tubes, but their contributions to the density of states become invisible when the tube is longer than 10 nm. The electronic structures of (6,5) and (8,3) tubes are found to be converged around 20 nm. The calculated band-gap energies of 100 nm long nanotubes are in good agreement with experimental results. The valence band structures of (6,5), (8,3), as well as (5,5) tubes are also investigated by means of ultraviolet photoelectron spectra (UPS), x-ray emission spectroscopy (XES), and the resonant inelastic x-ray scattering (RIXS) spectra theoretically. The UPS, XES and RIXS spectra become converged already at 10 nm. The length-dependent oscillation behavior is found in the RIXS spectra of (5,5) tubes, indicating that the RIXS spectra may be used to determine the size and length of metallic nanotubes. Furthermore, the chiral dependence observed in the simulated RIXS spectra suggests that RIXS spectra could be a useful technique for the determination of chirality of carbon nanotubes.

  1. Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors

    Science.gov (United States)

    Park, Noh-Hwal; Lee, Seung-Hoon; Jeong, Seung-Hyeon; Khim, Dongyoon; Kim, Yun Ho; Yoo, Sungmi; Noh, Yong-Young; Kim, Jang-Joo

    2018-03-01

    In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18 ± 0.85 cm2V-1s-1 average), on/off current ratio (107), and off current (˜1 pA). Thus, the combination of less purified PFDD-PD (98%-99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.

  2. Biologically inspired flexible quasi-single-mode random laser: An integration of Pieris canidia butterfly wing and semiconductors

    Science.gov (United States)

    Wang, Cih-Su; Chang, Tsung-Yuan; Lin, Tai-Yuan; Chen, Yang-Fang

    2014-10-01

    Quasi-periodic structures of natural biomaterial membranes have great potentials to serve as resonance cavities to generate ecological friendly optoelectronic devices with low cost. To achieve the first attempt for the illustration of the underlying principle, the Pieris canidia butterfly wing was embedded with ZnO nanoparticles. Quite interestingly, it is found that the bio-inspired quasi-single-mode random laser can be achieved by the assistance of the skeleton of the membrane, in which ZnO nanoparticles act as emitting gain media. Such unique characteristics can be interpreted well by the Fabry-Perot resonance existing in the window-like quasi-periodic structure of butterfly wing. Due to the inherently promising flexibility of butterfly wing membrane, the laser action can still be maintained during the bending process. Our demonstrated approach not only indicates that the natural biological structures can provide effective scattering feedbacks but also pave a new avenue towards designing bio-controlled photonic devices.

  3. Novel Family of Single-Phase Modified Impedance-Source Buck-Boost Multilevel Inverters with Reduced Switch Count

    DEFF Research Database (Denmark)

    Husev, Oleksandr; Strzelecki, Ryszard; Blaabjerg, Frede

    2016-01-01

    This paper describes novel single-phase solutions with increased inverter voltage levels derived by means of a nonstandard inverter configuration and impedance source networks. Operation principles based on special modulation techniques are presented. Detailed component design guidelines along wi...

  4. A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Liu Yi; Zhao Peng; Niu Xu

    2014-01-01

    A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than −45 dB isolation and maximum −103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator. (semiconductor integrated circuits)

  5. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  6. Nanowire assembly, e.g. for optical probes, comprises optically trapping high aspect ratio semiconductor nanowire with infrared single-beam optical trap and attaching nanowire to organic or inorganic structure

    OpenAIRE

    Pauzauskie, P.; Radenovic, A.; Trepagnier, E.; Liphardt, J.; Yang, P.

    2007-01-01

    NOVELTY - A nanowire assembly method comprises optically trapping a semiconductor nanowire with an infrared single-beam optical trap and attaching the nanowire to an organic or inorganic structure by laser fusing. The nanowire is further trapped in a fluid environment. The optical trap has a beam wavelength of 1064 nm. The nanowire has an aspect ratio greater than 100 and a diameter less than 100 (preferably less than 80) nm. The nanowire and the organic or inorganic structure form a heterost...

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Genetic wiring maps of single-cell protein states reveal an off-switch for GPCR signalling.

    Science.gov (United States)

    Brockmann, Markus; Blomen, Vincent A; Nieuwenhuis, Joppe; Stickel, Elmer; Raaben, Matthijs; Bleijerveld, Onno B; Altelaar, A F Maarten; Jae, Lucas T; Brummelkamp, Thijn R

    2017-06-08

    As key executers of biological functions, the activity and abundance of proteins are subjected to extensive regulation. Deciphering the genetic architecture underlying this regulation is critical for understanding cellular signalling events and responses to environmental cues. Using random mutagenesis in haploid human cells, we apply a sensitive approach to directly couple genomic mutations to protein measurements in individual cells. Here we use this to examine a suite of cellular processes, such as transcriptional induction, regulation of protein abundance and splicing, signalling cascades (mitogen-activated protein kinase (MAPK), G-protein-coupled receptor (GPCR), protein kinase B (AKT), interferon, and Wingless and Int-related protein (WNT) pathways) and epigenetic modifications (histone crotonylation and methylation). This scalable, sequencing-based procedure elucidates the genetic landscapes that control protein states, identifying genes that cause very narrow phenotypic effects and genes that lead to broad phenotypic consequences. The resulting genetic wiring map identifies the E3-ligase substrate adaptor KCTD5 (ref. 1) as a negative regulator of the AKT pathway, a key signalling cascade frequently deregulated in cancer. KCTD5-deficient cells show elevated levels of phospho-AKT at S473 that could not be attributed to effects on canonical pathway components. To reveal the genetic requirements for this phenotype, we iteratively analysed the regulatory network linked to AKT activity in the knockout background. This genetic modifier screen exposes suppressors of the KCTD5 phenotype and mechanistically demonstrates that KCTD5 acts as an off-switch for GPCR signalling by triggering proteolysis of Gβγ heterodimers dissociated from the Gα subunit. Although biological networks have previously been constructed on the basis of gene expression, protein-protein associations, or genetic interaction profiles, we foresee that the approach described here will enable the

  11. Q-switching and efficient harmonic generation from a single-mode LMA photonic bandgap rod fiber laser

    DEFF Research Database (Denmark)

    Laurila, Marko; Saby, Julien; Alkeskjold, Thomas T.

    2011-01-01

    We demonstrate a Single-Mode (SM) Large-Mode-Area (LMA) ytterbium-doped PCF rod fiber laser with stable and close to diffraction limited beam quality with 110W output power. Distributed-Mode-Filtering (DMF) elements integrated in the cladding of the rod fiber provide a robust spatial mode with a ...

  12. Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR

    Science.gov (United States)

    Lecocq, Vincent; Chomet, Baptiste; Ferrières, Laurence; Myara, Mikhaël.; Beaudoin, Grégoire; Sagnes, Isabelle; Cerutti, Laurent; Denet, Stéphane; Garnache, Arnaud

    2017-02-01

    Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, or atomic clock where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power, high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Built up in this field, our expertise allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8-1.1 μm and 2-2.5 μm spectral range. Here we demonstrate highly coherent broadly tunable single frequency laser micro-chip, intracavity element free, based on a patented VECSEL technology, integrated into a compact module with driving electronics. VECSEL devices emitting in the Near and Middle-IR developed in the frame of this work [2] exhibit exciting features compared to diode-pumped solid-state lasers and DFB diode lasers; they combine high power (>100mW) high temporal coherence together with a low divergence diffraction limited TEM00 beam. They exhibit a class-A dynamics with a Relative Intensity Noise as low as -140dB/Hz and at shot noise level reached above 200MHz RF frequency (up to 160GHz), a free running narrow linewidth at sub MHz level (fundamental limit at Hz level) with high spectral purity (SMSR >55dB), a linear polarization (>50dB suppression ratio), and broadband continuous tunability greater than 400GHz (state of the art commercial technologies thanks to a combination of power-coherence-wavelength tunability performances and integration.

  13. Next Generation Semiconductor Based Sequencing of the Donkey (Equus asinus Genome Provided Comparative Sequence Data against the Horse Genome and a Few Millions of Single Nucleotide Polymorphisms.

    Directory of Open Access Journals (Sweden)

    Francesca Bertolini

    Full Text Available Few studies investigated the donkey (Equus asinus at the whole genome level so far. Here, we sequenced the genome of two male donkeys using a next generation semiconductor based sequencing platform (the Ion Proton sequencer and compared obtained sequence information with the available donkey draft genome (and its Illumina reads from which it was originated and with the EquCab2.0 assembly of the horse genome. Moreover, the Ion Torrent Personal Genome Analyzer was used to sequence reduced representation libraries (RRL obtained from a DNA pool including donkeys of different breeds (Grigio Siciliano, Ragusano and Martina Franca. The number of next generation sequencing reads aligned with the EquCab2.0 horse genome was larger than those aligned with the draft donkey genome. This was due to the larger N50 for contigs and scaffolds of the horse genome. Nucleotide divergence between E. caballus and E. asinus was estimated to be ~ 0.52-0.57%. Regions with low nucleotide divergence were identified in several autosomal chromosomes and in the whole chromosome X. These regions might be evolutionally important in equids. Comparing Y-chromosome regions we identified variants that could be useful to track donkey paternal lineages. Moreover, about 4.8 million of single nucleotide polymorphisms (SNPs in the donkey genome were identified and annotated combining sequencing data from Ion Proton (whole genome sequencing and Ion Torrent (RRL runs with Illumina reads. A higher density of SNPs was present in regions homologous to horse chromosome 12, in which several studies reported a high frequency of copy number variants. The SNPs we identified constitute a first resource useful to describe variability at the population genomic level in E. asinus and to establish monitoring systems for the conservation of donkey genetic resources.

  14. Next Generation Semiconductor Based Sequencing of the Donkey (Equus asinus) Genome Provided Comparative Sequence Data against the Horse Genome and a Few Millions of Single Nucleotide Polymorphisms.

    Science.gov (United States)

    Bertolini, Francesca; Scimone, Concetta; Geraci, Claudia; Schiavo, Giuseppina; Utzeri, Valerio Joe; Chiofalo, Vincenzo; Fontanesi, Luca

    2015-01-01

    Few studies investigated the donkey (Equus asinus) at the whole genome level so far. Here, we sequenced the genome of two male donkeys using a next generation semiconductor based sequencing platform (the Ion Proton sequencer) and compared obtained sequence information with the available donkey draft genome (and its Illumina reads from which it was originated) and with the EquCab2.0 assembly of the horse genome. Moreover, the Ion Torrent Personal Genome Analyzer was used to sequence reduced representation libraries (RRL) obtained from a DNA pool including donkeys of different breeds (Grigio Siciliano, Ragusano and Martina Franca). The number of next generation sequencing reads aligned with the EquCab2.0 horse genome was larger than those aligned with the draft donkey genome. This was due to the larger N50 for contigs and scaffolds of the horse genome. Nucleotide divergence between E. caballus and E. asinus was estimated to be ~ 0.52-0.57%. Regions with low nucleotide divergence were identified in several autosomal chromosomes and in the whole chromosome X. These regions might be evolutionally important in equids. Comparing Y-chromosome regions we identified variants that could be useful to track donkey paternal lineages. Moreover, about 4.8 million of single nucleotide polymorphisms (SNPs) in the donkey genome were identified and annotated combining sequencing data from Ion Proton (whole genome sequencing) and Ion Torrent (RRL) runs with Illumina reads. A higher density of SNPs was present in regions homologous to horse chromosome 12, in which several studies reported a high frequency of copy number variants. The SNPs we identified constitute a first resource useful to describe variability at the population genomic level in E. asinus and to establish monitoring systems for the conservation of donkey genetic resources.

  15. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  16. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  17. 10-hydroxybenzo[h]quinoline: Switching between single and double-well proton transfer through structural modifications

    DEFF Research Database (Denmark)

    Hristova, S; Dobrikov, G; Kamounah, F. S.

    2015-01-01

    and excited singlet state. We observed that the incorporation of electron acceptor substituents on position 7 of the HBQ backbone led to appearance of a keto tautomer in ground state and changes in the excited state potential energy surface. Both processes were strongly solvent dependent. In the ground state...... the equilibrium could be driven from the enol to the keto form by change of solvent. The theoretical calculations explain the substitution-determined transition from a single- to a double-well proton transfer mechanism...

  18. Battery Management System—Balancing Modularization Based on a Single Switched Capacitor and Bi-Directional DC/DC Converter with the Auxiliary Battery

    Directory of Open Access Journals (Sweden)

    Mohamed Daowd

    2014-04-01

    Full Text Available Lithium-based batteries are considered as the most advanced batteries technology, which can be designed for high energy or high power storage systems. However, the battery cells are never fully identical due to the fabrication process, surrounding environment factors and differences between the cells tend to grow if no measures are taken. In order to have a high performance battery system, the battery cells should be continuously balanced for maintain the variation between the cells as small as possible. Without an appropriate balancing system, the individual cell voltages will differ over time and battery system capacity will decrease quickly. These issues will limit the electric range of the electric vehicle (EV and some cells will undergo higher stress, whereby the cycle life of these cells will be shorter. Quite a lot of cell balancing/equalization topologies have been previously proposed. These balancing topologies can be categorized into passive and active balancing. Active topologies are categorized according to the active element used for storing the energy such as capacitor and/or inductive component as well as controlling switches or converters. This paper proposes an intelligent battery management system (BMS including a battery pack charging and discharging control with a battery pack thermal management system. The BMS user input/output interfacing. The battery balancing system is based on battery pack modularization architecture. The proposed modularized balancing system has different equalization systems that operate inside and outside the modules. Innovative single switched capacitor (SSC control strategy is proposed to balance between the battery cells in the module (inside module balancing, IMB. Novel utilization of isolated bidirectional DC/DC converter (IBC is proposed to balance between the modules with the aid of the EV auxiliary battery (AB. Finally an experimental step-up has been implemented for the validation of the

  19. Switching antidepressants

    African Journals Online (AJOL)

    depressive disorder, with response rates of 50-60%. Switching within or between classes of antidepressants is often required in patients with an insufficient response to SSRIs.12 Because they share a similar mechanism of action, the immediate substitution of one SSRI for another is probably the easiest switching option.

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  1. Case presentation of two patients using diagonal platform-switched double implants for maxillary single-first-molar replacement as the alternative of a single-tooth implant.

    Science.gov (United States)

    Hotta, Yasunori; Ito, Koji; Komatsu, Shinichi; Saito, Takashi

    2015-12-01

    A single-tooth implant restoration is generally performed for maxillary single-first-molar replacement. If the interdental space between the second premolar and the second molar is large enough, a double-implant placement can be performed to avoid creating mesiodistal cantilever and to distribute occlusal loading forces.If there is not adequate space for a double-implant placement to be performed mesiodistally along the crest of the alveolar ridge line, they should be placed along a diagonal line offset lingually to increase the space. This procedure has two primary advantages. First, greater stability is provided by a double-implant placement. Resistance to lateral forces (palatal-buccal) is much stronger than two implants placed along the alveolar crest ridge line. Residual palatal and buccal bone can provide support against occlusal forces, provided that there is adequate residual bone in these regions.If anatomical conditions are favorable, the placement of two diagonal implants in the palatal and buccal residual bones can be a rational procedure.We report on two typical patients. The progress of these patients was followed using computed tomography for 7 and 6 years, respectively.

  2. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  3. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  4. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  5. Metal–semiconductor nanojunctions and their rectification ...

    Indian Academy of Sciences (India)

    Administrator

    tent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure. Keywords. Metal–semiconductor nanojunctions; rectification characteristics; nanostructure systems; single- walled carbon nanotubes. 1. Introduction. In recent years there have been a lot of research ...

  6. Measurement of spectral linewidths of semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Du Xiaocheng; He Zhengchuan; Tang Sulan

    1987-03-01

    Based on the van der Pol equation, formulas describing the measurement of spectral linewidths of semiconductor lasers with the delayed self-heterodyne method were deduced and the influence of the spectral parameters on the measurement are given. Experimental results of single frequency semiconductor lasers are reported.

  7. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  8. Design and partial implementation of RSFQ-based Batcher-banyan switch and support tools

    Science.gov (United States)

    Zinoviev, Dmitry Yurievich

    This paper describes the results of the analysis and implementation of ultra-fast low-power superconductor digital switching cores based on Rapid Single-Flux-Quantum (RSFQ) technology. In particular, RSFQ circuits for implementation of crossbar, Batcher-banyan and TDM shared bus switching cores are considered, and possible parameters of these circuits are estimated. The results show that the proposed RSFQ digital switches with overall throughput of 2.88 Tbps per chip operating at the exchange frequencies of ˜30GHz and dissipating very little power could effectively compete with their semiconductor and photonic counterparts. Based upon the results of the analysis, the Batcher-banyan switching core was chosen for the hardware implementation. Several low-level architectures of the so-called beta element, or 2 x 2 cross-point switch, and also address decoders for a sorting and for an expanding network nodes, were developed and mapped onto RSFQ elementary cells. We consider the support tools and concepts used for the simulation, modeling, and testing of the switching network, namely, physical-level and gate-level simulators of complex RSFQ circuits. Octopux-an automated setup for low-speed testing of digital and analog superconductor circuits-is also presented. A TDM-based beta-element which constitutes one of the most important parts of the core, and the systolic clock distribution network, were designed, fabricated in 3.5 μm niobium-trilayer technology and tested using Octopux.

  9. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  10. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2013-07-03

    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  11. Photonic Switching Devices Using Light Bullets

    Science.gov (United States)

    Goorjian, Peter M. (Inventor)

    1999-01-01

    A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

  12. All-optical devices for ultrafast packet switching

    DEFF Research Database (Denmark)

    Dorren, H.J.S.; HerreraDorren, J.; Raz, O.

    2007-01-01

    We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

  13. A new solid-state passive switch for neodymium lasers

    Science.gov (United States)

    Ziul'Kov, V. A.; Kazachenko, A. E.; Kotov, S. G.; Kovalev, D. V.; Stavrov, A. A.

    1992-07-01

    A new passive modulator based on CuInS2(1-x)Se2x-doped glass is proposed for Q-switching in neodymium lasers. It is noted that these solid-state passive switches can operate in a wide spectral range and do not require the use of semiconductor compounds of high optical quality.

  14. Silicon Controlled Switch for Detection of Ionizing Radiation

    Science.gov (United States)

    2015-12-01

    7 II. EXPERIMENTAL ANALYSIS OF KEY CIRCUIT ELEMENTS A. SCS STANDALONE I-V OPERATION A Silicon -Controlled Switch (SCS) is a semiconductor...NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited SILICON CONTROLLED...Master’s thesis 4. TITLE AND SUBTITLE SILICON CONTROLLED SWITCH FOR DETECTION OF IONIZING RADIATION 5. FUNDING NUMBERS 6. AUTHOR(S) Karl J

  15. Switchable dual-wavelength single-longitudinal-mode erbium-doped fiber laser using an inverse-Gaussian apodized fiber Bragg grating filter and a low-gain semiconductor optical amplifier.

    Science.gov (United States)

    Lin, Bo; Tjin, Swee Chuan; Zhang, Han; Tang, Dingyuan; Hao, Jianzhong; Dong, Bo; Liang, Sheng

    2010-12-20

    We present a stable and switchable dual-wavelength erbium-doped fiber laser. In the ring cavity, an inverse-Gaussian apodized fiber Bragg grating serves as an ultranarrow dual-wavelength passband filter, a semiconductor optical amplifier biased in the low-gain regime reduces the gain competition of the two wavelengths, and a feedback fiber loop acts as a mode filter to guarantee a stable single-longitudinal-mode operation. Two lasing lines with a wavelength separation of approximately 0.1 nm are obtained experimentally. A microwave signal at 12.51 GHz is demonstrated by beating the dual wavelengths at a photodetector.

  16. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  17. Caffeine improves anticipatory processes in task switching

    NARCIS (Netherlands)

    Tieges, Zoe; Snel, Jan; Kok, Albert; Wijnen, Jasper G.; Lorist, Monicque M.; Ridderinkhof, K. Richard

    We studied the effects of moderate amounts of caffeine on task switching and task maintenance using mixed-task (AABB) blocks, in which participants alternated predictably between two tasks, and single-task (AAAA, BBBB) blocks. Switch costs refer to longer reaction times (RT) on task switch trials

  18. A single-source solid-precursor method for making eco-friendly doped semiconductor nanoparticles emitting multi-color luminescence.

    Science.gov (United States)

    Manzoor, K; Aditya, V; Vadera, S R; Kumar, N; Kutty, T R N

    2007-02-01

    A novel synthesis method is presented for the preparation of eco-friendly, doped semiconductor nanocrystals encapsulated within oxide-shells, both formed sequentially from a single-source solid-precursor. Highly luminescent ZnS nanoparticles, in situ doped with Cu(+)-Al3+ pairs and encapsulated with ZnO shells are prepared by the thermal decomposition of a solid-precursor compound, zinc sulfato-thiourea-oxyhydroxide, showing layered crystal structure. The precursor compound is prepared by an aqueous wet-chemical reaction involving necessary chemical reagents required for the precipitation, doping and inorganic surface capping of the nanoparticles. The elemental analysis (C, H, N, S, O, Zn), quantitative estimation of different chemical groups (SO4(2-) and NH4(-)) and infrared studies suggested that the precursor compound is formed by the intercalation of thiourea, and/or its derivatives thiocarbamate (CSNH2(-)), dithiocarbamate (CS2NH2(-)), etc., and ammonia into the gallery space of zinc-sulfato-oxyhydroxide corbel where the Zn(II) ions are both in the octahedral as well as tetrahedral coordination in the ratio 3 : 2 and the dopant ions are incorporated within octahedral voids. The powder X-ray diffraction of precursor compound shows high intensity basal reflection corresponding to the large lattice-plane spacing of d = 11.23 angstroms and the Rietveld analysis suggested orthorhombic structure with a = 9.71 angstroms, b = 12.48 angstroms, c = 26.43 angstroms, and beta = 90 degrees. Transmission electron microscopy studies show the presence of micrometer sized acicular monocrystallites with prismatic platy morphology. Controlled thermolysis of the solid-precursor at 70-110 degrees C leads to the collapse of layered structure due to the hydrolysis of interlayer thiourea molecules or its derivatives and the S2- ions liberated thereby reacts with the tetrahedral Zn(II) atoms leading to the precipitation of ZnS nanoparticles at the gallery space. During this process

  19. Characterization of heterojunctions via x-ray and uv photoemission spectroscopy: energy level implications for single and mixed monolayer SAMs, cadmium selenide nanoparticle films, and organic semiconductor depositions

    Science.gov (United States)

    Graham, Amy L.

    This work has centered on the interface dipoles arising at heterojunctions between metals, semiconductor nanoparticles, self-assembled monolayers, and organic semiconductor materials. Alkanethiol self-assembled monolayers, CdSe nanocrystals, and the organic semiconductors zinc phthalocyanine (ZnPc) and Buckminster fullerene (C60) were the basis of these investigations. UV photoemission spectroscopy has proven to be an invaluable tool to observe the vacuum level shifts for these analyses while using XPS to corroborate surface structure. With a full evaluation of these surfaces, the shifts in the vacuum level, valence ionizations, and core ionizations, the impact of these interfaces, as well as their influence on the subsequent deposition of organic semiconductor layers is established. Alkanethiols possessing varying dipole moments were examined on gold and silver substrates. The viability of these alkanethiols was demonstrated to predictively adjust the work function of these metals as a function of their intrinsic dipole moments projected to surface normal, and established differences between Ag---S and Au---S bonds. The capability of the SAMs to modify the work function of gold provided an opportunity for mixed monolayers of the alkanethiols to produce a precise range of work functions by minimal adjustments of solution concentration, which were examined with a simple point dipole model. Photoemission spectroscopy offers a thorough analysis of CdSe nanoparticle films. Despite a plethora of research on these nanocrystals, there still is controversy on the magnitude of the shift in the valence band with diameter. In our research we found the majority of the valence band shift could be attributed to the interface dipole, ignored previously. Meanwhile, the valence band tethered films was obscured by the sulfur of the thiol tether. Finally, organic semiconductor layers deposited on SAMs on gold exhibited various interface dipole effects at these heterojunctions. Charge

  20. Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

    Science.gov (United States)

    Roy, Pinku; Maiti, Tanmoy

    2018-02-01

    Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

  1. Structure of the complex of [Ru(tpm)(dppz)py](2+) with a B-DNA oligonucleotide - a single-substituent binding switch for a metallo-intercalator.

    Science.gov (United States)

    Waywell, Philip; Gonzalez, Veronica; Gill, Martin R; Adams, Harry; Meijer, Anthony J H M; Williamson, Mike P; Thomas, James A

    2010-02-22

    We report the synthesis of three new complexes related to the achiral [Ru(tpm)(dppz)py](2+) cation (tpm=tripyridazole methane, dppz=dipyrido[3,2-a:2',3'-c]phenazine, py=pyridine) that contain an additional single functional group on the monodentate ancillary pyridyl ligand. Computational calculations indicate that the coordinated pyridyl rings are in a fixed orientation parallel to the dppz axis, and that the electrostatic properties of the complexes are very similar. DNA binding studies on the new complexes reveal that the nature and positioning of the functional group has a profound effect on the binding mode and affinity of these complexes. To explore the molecular and structural basis of these effects, circular dichroism and NMR studies on [Ru(tpm)(dppz)py]Cl(2) with the octanucleotides d(AGAGCTCT)(2) and d(CGAGCTCG)(2), were carried out. These studies demonstrate that the dppz ligand intercalates into the G(2)-A(3) step, with {Ru(tpm)py} in the minor groove. They also reveal that the complex intercalates into the binding site in two possible orientations with the pyridyl ligand of the major conformer making close contact with terminal base pairs. We conclude that substitution at the 2- or 3-position of the pyridine ring has little effect on binding, but that substitution at the 4-position drastically disrupts intercalative binding, particularly with a 4-amino substituent, because of steric and electronic interactions with the DNA. These results indicate that complexes derived from these systems have the potential to function as sequence-specific light-switch systems.

  2. Modeling of rf MEMS switches

    Science.gov (United States)

    Robertson, Barbara; Ho, Fat D.; Hudson, Tracy D.

    2001-10-01

    The microelectromechanical system (MEMS) switch offers many benefits in radio frequency (RF) applications. These benefits include low insertion loss, high quality factor (Q), low power, RF isolation, and low cost. The ability to manufacture mechanical switches on a chip with electronics can lead to higher functionality, such as single-chip arrays, and smart switches. The MEMS switch is also used as a building block in devices such as phase shifters, filters, and switchable antenna elements. The MEMS designer needs models of these basic elements in order to incorporate them into their applications. The objective of this effort is to develop lumped element models for MEMS RF switches, which are incorporated into a CAD software. Tanner Research Inc.'s Electronic Design Automation (EDA) software is being used to develop a suite of mixed-signal RF switch models. The suite will include switches made from cantilever beams and fixed-fixed beams. The switches may be actuated by electrostatic, piezoelectric or electromagnetic forces. The effort presented in this paper concentrates on switches actuated by electrostatic forces. The lumped element models use a current-force electrical-mechanical analogy. Finite element modeling and device testing will be used to verify the Tanner models. The effects of materials, geometries, temperature, fringing fields, and mounting geometries are considered.

  3. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  4. A new generation of high-power semiconductor devices

    Directory of Open Access Journals (Sweden)

    Drndarević Vujo R.

    2014-01-01

    Full Text Available Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material. However, in many applications, especially in the field of power electronics, the available Si components can not meet the demands that are placed on the issue of operating voltage, switching frequency, efficiency and reliability. In order to overcome the resulting limitations, intensive research of new semiconductor materials that enable cost-effective implementation of semiconductor components with required characteristics are carried out. This paper presents a comparative analysis of semiconductor materials with wide energy band gap bearing in mind the possibility of their application in the field of power electronics and provides an overview of commercially available switching components implemented using new technologies and materials.

  5. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  6. A high‐isolation switch based on a standard GaAs process

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy

    2011-01-01

    The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of......The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of...

  7. Optical fiber switch

    Science.gov (United States)

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  8. The physics and applications of amorphous semiconductors

    CERN Document Server

    Madan, Arun

    1988-01-01

    This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This boo

  9. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  10. Analyses of resource reservation schemes for optical burst switching networks

    Science.gov (United States)

    Solanska, Michaela; Scholtz, Lubomir; Ladanyi, Libor; Mullerova, Jarmila

    2017-12-01

    With growing demands of Internet Protocol services for transmission capacity and speed, the Optical Burst Switching presents the solution for future high-speed optical networks. Optical Burst Switching is a technology for transmitting large amounts of data bursts through a transparent optical switching network. To successfully transmit bursts over OBS network and reach the destination node, resource reservation schemes have to be implemented to allocate resources and configure optical switches for that burst at each node. The one-way resource reservation schemes and the performance evaluation of reservation schemes are presented. The OBS network model is performed using OMNeT++ simulation environment. During the reservation of network resources, the optical cross-connect based on semiconductor optical amplifier is used as the core node. Optical switches based on semiconductor optical amplifiers are a promising technology for high-speed optical communication networks.

  11. Dual Z-Source Inverter With Three-Level Reduced Common-Mode Switching

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

    2007-01-01

    This paper presents the design of a dual Z-source inverter that can be used with either a single dc source or two isolated dc sources. Unlike traditional inverters, the integration of a properly designed Z-source network and semiconductor switches to the proposed dual inverter allows buck......-boost power conversion to be performed over a wide modulation range, with three-level output waveforms generated. The connection of an additional transformer to the inverter ac output also allows all generic wye-or delta-connected loads with three-wire or four-wire configuration to be supplied by the inverter....... Modulationwise, the dual inverter can be controlled using a carefully designed carrier-based pulsewidth-modulation (PWM) scheme that will always ensure balanced voltage boosting of the Z-source network while simultaneously achieving reduced common-mode switching. Because of the omission of dead-time delays...

  12. Dual Z-Source Inverter With Three-Level Reduced Common-Mode Switching

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

    2007-01-01

    . Modulationwise, the dual inverter can be controlled using a carefully designed carrier-based pulsewidth-modulation (PWM) scheme that will always ensure balanced voltage boosting of the Z-source network while simultaneously achieving reduced common-mode switching. Because of the omission of dead-time delays...... without interruption, and for cases where two isolated sources are used, zero common-mode voltage can still be ensured. These theoretical findings, together with the inverter practicality, have been confirmed in simulations both using PSIM with Matlab/Simulink coupler and experimentally using a laboratory......This paper presents the design of a dual Z-source inverter that can be used with either a single dc source or two isolated dc sources. Unlike traditional inverters, the integration of a properly designed Z-source network and semiconductor switches to the proposed dual inverter allows buck...

  13. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures ...

  14. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  15. Strong Exciton-photon Coupling in Semiconductor Microcavities

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher

    1999-01-01

    The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....

  16. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  17. Tutorial: Integrated-photonic switching structures

    Science.gov (United States)

    Soref, Richard

    2018-02-01

    Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

  18. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    Ozpineci, B.

    2004-01-02

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  19. Filter optimization of Si and SiC semiconductor-based H5 and Conergy-NPC transformerless PV inverters

    DEFF Research Database (Denmark)

    Saridakis, Stefanos; Koutroulis, Eftichios; Blaabjerg, Frede

    2013-01-01

    Single-phase transformerless Photovoltaic (PV) inverters are synthesized by combining available solutions in terms of the power section topology, power semiconductors manufacturing technology and structure of the output filter. A design method is presented in this paper for optimizing the power...... semiconductors type (Si- or SiC-based), switching frequency and output filter (LCL- or LLCL-type) employed in H5 and Conergy-NPC PV inverters, considering the simultaneous impact of the factors affecting the PV energy processing performance and PV inverter cost. According to the design results, the optimized Si......-based counterparts will enhance the economic superiority of the resulting optimized H5 and Conergy-NPC PV inverters with respect to the cost of the electricity they generate....

  20. Cryogenic power conversion: Combining HT superconductors and semiconductors

    Science.gov (United States)

    Mueller, Otward

    1992-04-01

    The availability and use of high-temperature superconductors (HTS) will require and enforce completely new electronic systems concepts. One of many possible applications could and probably will be the field of ac/dc, dc/ac as well as RF power conversion at the multi-kilowatt level. Until HTS high frequency switches able to handle hundreds of volts and tens of amperes are invented and produced commercially existing semiconductor devices such as the power MOS field-effect transistor can be used advantageously in order to implement ultra-high efficiency circuits in combination with HTS components such as high Q inductors and capacitors. This marriage could result in a drastic size, weight and cost reduction for various suitable high power applications. The key to high efficiency power conversion are so-called zero-voltage switching circuits known as single transistor Class E and half-bridge Class D amplifiers. This paper analyzes and discusses some relevant design criteria such as conversion efficiency etc. versus temperature down to 77 K.

  1. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  2. Molecular Rotors as Switches

    Directory of Open Access Journals (Sweden)

    Kang L. Wang

    2012-08-01

    Full Text Available The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V revealed a temperature-dependent negative differential resistance (NDR associated with the device. The analysis of the device

  3. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  4. Switching Phenomena in a System with No Switches

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    2010-02-01

    It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

  5. Bistable four-wave mixing response in a semiconductor quantum dot coupled to a photonic crystal nanocavity.

    Science.gov (United States)

    Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun

    2017-10-16

    We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.

  6. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  7. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  8. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  9. Optimization of multi-branch switched diversity systems

    KAUST Repository

    Nam, Haewoon

    2009-10-01

    A performance optimization based on the optimal switching threshold(s) for a multi-branch switched diversity system is discussed in this paper. For the conventional multi-branch switched diversity system with a single switching threshold, the optimal switching threshold is a function of both the average channel SNR and the number of diversity branches, where computing the optimal switching threshold is not a simple task when the number of diversity branches is high. The newly proposed multi-branch switched diversity system is based on a sequence of switching thresholds, instead of a single switching threshold, where a different diversity branch uses a different switching threshold for signal comparison. Thanks to the fact that each switching threshold in the sequence can be optimized only based on the number of the remaining diversity branches, the proposed system makes it easy to find these switching thresholds. Furthermore, some selected numerical and simulation results show that the proposed switched diversity system with the sequence of optimal switching thresholds outperforms the conventional system with the single optimal switching threshold. © 2009 IEEE.

  10. Intraband effects on ultrafast pulse propagation in semiconductor ...

    Indian Academy of Sciences (India)

    An optimistic candidate to compete with this fast increasing data rate may be the semiconductor optical am- plifier (SOA) whose non-linear effects have been studied for different all-optical device applications such as in-line amplifiers, demultiplexers, wavelength convert- ers and optical switches in optical communication [1].

  11. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  12. Fabrication Processes for Surface-Emitting via External 45-DEGREE Reflectors, High-Power via Arrayed Ridge - Single-Mode Phase-Locked Aluminum Gallium Arsenide/gallium Arsenide Semiconductor Laser Sources.

    Science.gov (United States)

    Porkolab, Gyorgy Arpad

    The fabrication of monolithically integrated configurations of semiconductor lasers incorporating multiple functions is still an open issue today in engineering. A useful set of functions to integrate are: surface-emitting, high -power, phase-locked, single-mode, and collimated laser beam output. In this work new materials and advanced fabrication processes are developed for integrating the first four of the five functions listed. The interest in semiconductor lasers is due to their greater than 90% internal quantum efficiency in converting current-flux to photon-flux, their small size and weight, and their wavelength range from 400 to 1,550 nm. Multitudes of applications are possible for semiconductor laser sources ranging from the low-volume market of satellite-based communications systems to the high-volume market of image display screens. Semimetallic amorphous carbon (SMAC) thin film is introduced as an etch mask for chemically assisted ion beam etching (CAIBE) resulting in smooth etched facets in AlGaAs/GaAs at normal- and 45-degrees- incidence angles. A self-aligned etch technique is introduced using 4 separate photoresist selector-masks on top of a fixed SMAC master -mask on top of the AlGaAs/GaAs substrate to perform 4 separate CAIBE etches at 3 different angles and to 3 different depths to create self-aligned 3-dimensional microstructures of 1.3-μm deep ridge waveguides (RWG), 6-μm deep laser facets, and 11- μm long back-to-back 45-degree reflectors arranged in 3 by 100 arrays. Trenches on topside and underside of laser facets are introduced to deflect current away from laser facets. Silicon-rich nitro-oxide thin film is introduced as triple-use encapsulation to provide chemical passivation of AlGaAs/GaAs, optical anti-reflection coating by being refractive-index matched to AlGaAs/GaAs, and electrical insulation. A pincer-action sample-holder for CAIBE is introduced allowing samples to heat up by ion beam heating. Various surface preparations

  13. A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

    Science.gov (United States)

    Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

    2018-04-01

    This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

  14. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...... plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design...... of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires...

  15. Plasmonic effects in metal-semiconductor nanostructures

    CERN Document Server

    Toropov, Alexey A

    2015-01-01

    Metal-semiconductor nanostructures represent an important new class of materials employed in designing advanced optoelectronic and nanophotonic devices, such as plasmonic nanolasers, plasmon-enhanced light-emitting diodes and solar cells, plasmonic emitters of single photons, and quantum devices operating in infrared and terahertz domains. The combination of surface plasmon resonances in conducting structures, providing strong concentration of an electromagnetic optical field nearby, with sharp optical resonances in semiconductors, which are highly sensitive to external electromagnetic fields, creates a platform to control light on the nanoscale. The design of the composite metal-semiconductor system imposes the consideration of both the plasmonic resonances in metal and the optical transitions in semiconductors - a key issue being their resonant interaction providing a coupling regime. In this book the reader will find descriptions of electrodynamics of conducting structures, quantum physics of semiconducto...

  16. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  17. Semiconductor Modeling Techniques

    CERN Document Server

    Xavier, Marie

    2012-01-01

    This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

  18. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  19. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  20. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  1. Designing field-controllable graphene-dot-graphene single molecule switches: A quantum-theoretical proof-of-concept under realistic operating conditions.

    Science.gov (United States)

    Pejov, Ljupčo; Petreska, Irina; Kocarev, Ljupčo

    2015-12-28

    A theoretical proof of the concept that a particularly designed graphene-based moletronics device, constituted by two semi-infinite graphene subunits, acting as source and drain electrodes, and a central benzenoid ring rotator (a "quantum dot"), could act as a field-controllable molecular switch is outlined and analyzed with the density functional theory approach. Besides the ideal (0 K) case, we also consider the operation of such a device under realistic operating (i.e., finite-temperature) conditions. An in-depth insight into the physics behind device controllability by an external field was gained by thorough analyses of the torsional potential of the dot under various conditions (absence or presence of an external gating field with varying strength), computing the torsional correlation time and transition probabilities within the Bloembergen-Purcell-Pound formalism. Both classical and quantum mechanical tunneling contributions to the intramolecular rotation were considered in the model. The main idea that we put forward in the present study is that intramolecular rotors can be controlled by the gating field even in cases when these groups do not possess a permanent dipole moment (as in cases considered previously by us [I. Petreska et al., J. Chem. Phys. 134, 014708-1-014708-12 (2011)] and also by other groups [P. E. Kornilovitch et al., Phys. Rev. B 66, 245413-1-245413-7 (2002)]). Consequently, one can control the molecular switching properties by an external electrostatic field utilizing even nonpolar intramolecular rotors (i.e., in a more general case than those considered so far). Molecular admittance of the currently considered graphene-based molecular switch under various conditions is analyzed employing non-equilibrium Green's function formalism, as well as by analysis of frontier molecular orbitals' behavior.

  2. Generation of dark and bright pulses in an SOA-based Q-switched fiber laser

    Science.gov (United States)

    Pan, Honggang; Zhang, Ailing; Tong, Zhengrong

    2017-08-01

    Bright and dark pulses in a Q-switched optical fiber laser based on a semiconductor optical amplifier were demonstrated. By changing the setting of the polarization controllers, bright or dark pulses with differing pulse widths and frequency repetition rates can be obtained. The bright pulse and dark pulse are formed mainly by the effect of gain dispersion of the semiconductor optical amplifier.

  3. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  4. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  5. Switched on!

    CERN Multimedia

    2008-01-01

    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  6. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  7. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  8. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  9. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode.

    Science.gov (United States)

    Kuhlmann, Andreas V; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D; Warburton, Richard J

    2013-07-01

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

  10. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

    International Nuclear Information System (INIS)

    Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J.; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.

    2013-01-01

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10 7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance

  11. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

    Energy Technology Data Exchange (ETDEWEB)

    Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Brunner, Daniel [Instituto de Física Interdisciplinar y Sistemas Complejos, IFISC (CSIC-UIB), Campus Universitat Illes Balears, E-07122 Palma de Mallorca (Spain); Ludwig, Arne [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Reuter, Dirk [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Department Physik, Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany); Wieck, Andreas D. [Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)

    2013-07-15

    Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10{sup 7} and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

  12. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  13. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  14. Hydrogen in anion vacancies of semiconductors

    Science.gov (United States)

    Du, Mao-Hua; Singh, David

    2009-03-01

    Hydrogen typically terminates the dangling bonds around vacancies in semiconductors, thereby, partially or completely passivating the vacancies. However, it has been shown recently that hydrogen in anion vacancies of many semiconductors, such as ZnO, MgO, InN, SnO2, and GaN, takes multi-coordinated structures and acts as shallow donors, providing n-type conductivity to the materials. We study the hydrogen in the anion vacancies of a series of II-VI and III-V semiconductors using density functional calculations. The results on these materials show that, in the anion vacancies of polar II-VI semiconductors, the hydrogen is usually anionic and is coordinated with more than one cation atoms as a result of the relatively high ionicity of the host materials. The hydrogen coordination number depends on the host anion size. On the other hand, in more covalent semiconductors such as some III-V semiconductors, the single cation-H bonding configuration may become most stable. In the anion vacancies of ZnX and CdX where X represents anions, hydrogen is typically amphoteric except for oxides, in which the small anion size prohibits the formation of the cation-cation bond that is required for the acceptor configuration.

  15. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

    International Nuclear Information System (INIS)

    Gordeev, N. Yu.; Novikov, I. I.; Kuznetsov, A. M.; Shernyakov, Yu. M.; Maximov, M. V.; Zhukov, A. E.; Chunareva, A. V.; Payusov, A. S.; Livshits, D. A.; Kovsh, A. R.

    2010-01-01

    The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.

  16. Note: Multi-confocal fluorescence correlation spectroscopy in living cells using a complementary metal oxide semiconductor-single photon avalanche diode array

    Science.gov (United States)

    Kloster-Landsberg, M.; Tyndall, D.; Wang, I.; Walker, R.; Richardson, J.; Henderson, R.; Delon, A.

    2013-07-01

    Living cells are heterogeneous and rapidly changing biological samples. It is thus desirable to measure molecular concentration and dynamics in many locations at the same time. In this note, we present a multi-confocal setup capable of performing simultaneous fluorescence correlation spectroscopy measurements, by focusing the spots with a spatial light modulator and acquiring data with a monolithic 32 × 32 single-photon avalanche photodiode array. A post-processing method is proposed to correct cross-talk effects between neighboring spots. We demonstrate the applicability of our system by simultaneously measuring the diffusion of free enhanced Green Fluorescent Protein (eGFP) molecules at nine different points in living cells.

  17. The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

    International Nuclear Information System (INIS)

    Li Da-Wei; Qin Jun-Rui; Chen Shu-Ming

    2013-01-01

    Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation. (geophysics, astronomy, and astrophysics)

  18. The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

    Science.gov (United States)

    Li, Da-Wei; Qin, Jun-Rui; Chen, Shu-Ming

    2013-02-01

    Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation.

  19. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  20. Wide Bandgap Extrinsic Photoconductive Switches

    Science.gov (United States)

    Sullivan, James Stephen

    Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The

  1. Ultrafast Terahertz Dynamics and Switching in Quantum Dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2012-01-01

    In this Chapter we describe the experimental studies of ultrafast carrier dynamics and all-optical switching in semiconductor quantum dots (QDs) using ultrafast terahertz (THz) techniques. In the first part of this chapter we describe the studies of carrier capture into the QDs, and thermionic...

  2. Metal-Semiconductor Contacts

    Science.gov (United States)

    Pugh, D. I.

    Metal-semiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. The rectifying properties of metal points on metallic sulphides were used extensively as detectors in early radio experiments, while during the second world war the rectifying point contact diode became important as a frequency detector and low level microwave radar detector [1]. Since 1945 the development of metal semiconductor contacts has been stimulated by the intense activity in the field of semiconductor physics and has remained vital in the ohmic connection of semiconductor devices with the outside world. The developments in surface science and the increased use of Schottky barriers in microelectronics has lead to much research with the aim of obtaining a full understanding of the physics of barrier formation and of current transport across the metal-semiconductor interface. Large gain spin electronic devices are possible with appropriate designs by incorporating ferromagnetic layers with semiconductors such as silicon [2]. This inevitably leads to metal-semiconductor contacts, and the impact of such junctions on the device must be considered. In this section we aim to look simply at the physical models that can be used to understand the electrical properties that can arise from these contacts, and then briefly discuss how deviations of these models can occur in practical junctions.

  3. Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O₃ Single Crystal.

    Science.gov (United States)

    Zhu, Zhi; Tang, Xingui; Jiang, Yanping; Liu, Qiuxiang; Zhang, Tianfu; Li, Wenhua

    2017-03-28

    This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn 1/3 Nb 2/3 ) 0.91 Ti 0.09 O₃ (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signified the relaxer-type behavior of the sample. The value of the relaxation parameter γ = 1.48 was estimated from the linear fit of the modified Curie-Weiss law, indicating the relaxer nature. High-temperature dielectric relaxation behaviors were revealed in the temperature region of 400-650 °C. In addition, under the measuring frequency of 10 kHz, ε r was tunable by changing the electric field and the largest tunability of ε r reached 14.78%. At room temperature, the high pyroelectric coefficient and detectivity figure of merit were reported.

  4. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

    International Nuclear Information System (INIS)

    Huang Da; Wu Jun-Jie; Tang Yu-Hua

    2013-01-01

    With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

  5. Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch

    Directory of Open Access Journals (Sweden)

    Jian Sun

    2016-07-01

    Full Text Available The graphene nano-electro-mechanical switches are promising components due to their outstanding switching performance. However, most of the reported devices suffered from a large actuation voltages, hindering them from the integration in the conventional complementary metal-oxide-semiconductor (CMOS circuit. In this work, we demonstrated the graphene nano-electro-mechanical switches with the local actuation electrode via conventional nanofabrication techniques. Both cantilever-type and double-clamped beam switches were fabricated. These devices exhibited the sharp switching, reversible operation cycles, high on/off ratio, and a low actuation voltage of below 5 V, which were compatible with the CMOS circuit requirements.

  6. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  7. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  8. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  9. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  10. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  11. A multipurpose switched reluctance motor with a series commutation buffer

    Directory of Open Access Journals (Sweden)

    L.A. Vasil'ev

    2014-06-01

    Full Text Available In this paper, a power-supply circuit for a multipurpose switched reluctance motor with a series commutation buffer is presented. It is shown that a series buffer improves output characteristics of multipurpose switched reluctance motors under supply from a single-phase circuit and also lifts necessity of switching capacitors according to the motor power supply modes.

  12. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  13. Electrostatic model of semiconductor nanoparticles trapped

    Indian Academy of Sciences (India)

    A simple electrostatic model is applied to study the solvation energy and localization energy to inorganic semiconductor nanocrystallites trapped in polymer and ion conducting polymer electrolytes. The effective mass approximation has been applied to the system. In the single charge configuration, the dielectric constant of ...

  14. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  15. Electrostatic model of semiconductor nanoparticles trapped in ...

    Indian Academy of Sciences (India)

    A simple electrostatic model is applied to study the solvation energy and localization energy to inorganic semiconductor nanocrystallites trapped in polymer and ion conducting polymer electrolytes. The effective mass approximation has been applied to the system. In the single charge configuration, the dielectric constant of ...

  16. Ultranarrow polaritons in a semiconductor microcavity

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 mu eV), in a semiconductor lambda microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces...

  17. Prediction of left main or 3-vessel disease using myocardial perfusion reserve on dynamic thallium-201 single-photon emission computed tomography with a semiconductor gamma camera.

    Science.gov (United States)

    Shiraishi, Shinya; Sakamoto, Fumi; Tsuda, Noriko; Yoshida, Morikatsu; Tomiguchi, Seiji; Utsunomiya, Daisuke; Ogawa, Hisao; Yamashita, Yasuyuki

    2015-01-01

    Myocardial perfusion imaging (MPI) may fail to detect balanced ischemia. We evaluated myocardial perfusion reserve (MPR) using Tl dynamic single-photon emission computed tomography (SPECT) and a novel cadmium zinc telluride (CZT) camera for predicting 3-vessel or left main coronary artery disease (CAD). METHODS AND RESULTS: A total of 55 consecutive patients with suspected CAD underwent SPECT-MPI and coronary angiography. The MPR index was calculated using the standard 2-compartment kinetic model. We analyzed the utility of MPR index, other SPECT findings, and various clinical variables. On multivariate analysis, MPR index and history of previous myocardial infarction (MI) predicted left main and 3-vessel disease. The area under the receiver operating characteristic curve was 0.81 for MPR index, 0.699 for history of previous MI, and 0.86 for MPR index plus history of previous MI. MPR index ≤1.5 yielded the highest diagnostic accuracy. Sensitivity, specificity, and accuracy were 86%, 78%, and 80%, respectively, for MPR index, 64%, 76%, 73% for previous MI, and 57%, 93%, and 84% for MPR index plus history of previous MI. Quantification of MPR using dynamic SPECT and a novel CZT camera may identify balanced ischemia in patients with left main or 3-vessel disease.

  18. Analysis of High Switching Frequency Quasi-Z-Source Photovoltaic Inverter Using Wide Bandgap Devices

    Science.gov (United States)

    Kayiranga, Thierry

    Power inverters continue to play a key role in todays electrical system more than ever. Power inverters employ power semiconductors to converter direct current (DC) into alternating current (AC). The performance of the semiconductors is based on speed and efficiency. Until recently, Silicon (Si) semiconductors had been established as mature. However, the continuous optimization and improvements in the production process of Si to meet today technology requirements have pushed Si materials to their theoretical limits. In an effort to find a suitable replacement, wide bandgap devices mainly Gallium Nitride (GaN) and Silicon Carbide (SiC), have proved to be excellent candidates offering high operation temperature, high blocking voltage and high switching frequency; of which the latter makes GaN a better candidate in high switching low voltage in Distributed Generations (DG). The single stage Quasi-Z-Source Inverter (qZSI) is also able to draw continuous and constant current from the source making ideal for PV applications in addition to allowing shoot-through states. The qZSI find best applications in medium level ranges where multiples qZS inverters can be cascaded (qZS-CMI) by combining the benefit of the qZSI, boost capabilities and continuous and constant input current, and those of the CMI, low output harmonic content and independent MPPT. When used with GaN devices operating at very high frequency, the qZS network impedance can be significantly reduced. However, the impedance network becomes asymmetric. The asymmetric impedance network (AIN-qZSI) has several advantages such as increased power density, increases system lifetime, small size volume and size making it more attractive for module integrated converter (MIC) concepts. However, there are technical challenges. With asymmetric component, resonance is introduced in the system leading to more losses and audible noise. With small inductances, new operation states become available further increasing the system

  19. The Molecular Switch of Telomere Phages: High Binding Specificity of the PY54 Cro Lytic Repressor to a Single Operator Site

    Science.gov (United States)

    Hammerl, Jens Andre; Roschanski, Nicole; Lurz, Rudi; Johne, Reimar; Lanka, Erich; Hertwig, Stefan

    2015-01-01

    Temperate bacteriophages possess a molecular switch, which regulates the lytic and lysogenic growth. The genomes of the temperate telomere phages N15, PY54 and ϕKO2 harbor a primary immunity region (immB) comprising genes for the prophage repressor, the lytic repressor and a putative antiterminator. The roles of these products are thought to be similar to those of the lambda proteins CI, Cro and Q, respectively. Moreover, the gene order and the location of several operator sites in the prototype telomere phage N15 and in ϕKO2 are also reminiscent of lambda-like phages. By contrast, in silico analyses revealed the presence of only one operator (OR3) in PY54. The purified PY54 Cro protein was used for EMSA studies demonstrating that it exclusively binds to a 16-bp palindromic site (OR3) upstream of the prophage repressor gene. The OR3 operator sequences of PY54 and ϕKO2/N15 only differ by their peripheral base pairs, which are responsible for Cro specificity. PY54 cI and cro transcription is regulated by highly active promoters initiating the synthesis of a homogenious species of leaderless mRNA. The location of the PY54 Cro binding site and of the identified promoters suggests that the lytic repressor suppresses cI transcription but not its own synthesis. The results indicate an unexpected diversity of the growth regulation mechanisms in lambda-related phages. PMID:26043380

  20. Urbach Tail and Optical Absorption in Layered Semiconductor TlGaSe2(1-x)S2x Single Crystals

    Science.gov (United States)

    Duman, S.; Gürbulak, B.

    2005-01-01

    TlGaSe2(1 - x)S2x single crystals were grown by the modified Bridgman-Stockbarger method. None of the grown crystals had cracks and voids on the surface. The freshly cleaved crystals had mirror-like surfaces and there was no need for mechanical or chemical polishing treatments. The measurements were performed in steps of 10 K if changes were small, and with steps of 3 and 5 K if changes were large in the direct and indirect band gaps energies. The direct and indirect band gaps for TlGaSe2(1 - x)S2x (x = 0, 0.2, 0.4, 0.6, 0.8, 1) samples were calculated as a function of temperature. There is an abrupt change in the energy spectrum of TlGaSe2(1 - x)S2x in the temperature ranges 90 100, 100, 100 120, 160 180, 220 240, and 240 250 K. The values obtained from the energy peak change may be phase transition temperatures. It is the first time that Urbach's rule and steepness parameters of TlGaSe2(1 - x)S2x samples have been investigated. The steepness parameters and Urbach energies for TlGaSe2(1 - x)S2x samples increased with increasing sample temperature in the range 10 320 K. We have concluded that the compositions x are determined without using the other techniques during crystal growth considering band gaps energies.

  1. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  2. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  3. Semiconductor nuclear detectors

    International Nuclear Information System (INIS)

    Schaub, Bernard

    1976-01-01

    Three semiconductors are nowadays available for nuclear detection (germanium, mercury iodide, cadmium telluride). Their methods of elaboration are briefly described and, as a conclusion, a very close at-hand development of cadmium telluride is foreseen [fr

  4. Photoresistance switching of plasmonic nanopores.

    Science.gov (United States)

    Li, Yi; Nicoli, Francesca; Chen, Chang; Lagae, Liesbet; Groeseneken, Guido; Stakenborg, Tim; Zandbergen, Henny W; Dekker, Cees; Van Dorpe, Pol; Jonsson, Magnus P

    2015-01-14

    Fast and reversible modulation of ion flow through nanosized apertures is important for many nanofluidic applications, including sensing and separation systems. Here, we present the first demonstration of a reversible plasmon-controlled nanofluidic valve. We show that plasmonic nanopores (solid-state nanopores integrated with metal nanocavities) can be used as a fluidic switch upon optical excitation. We systematically investigate the effects of laser illumination of single plasmonic nanopores and experimentally demonstrate photoresistance switching where fluidic transport and ion flow are switched on or off. This is manifested as a large (∼ 1-2 orders of magnitude) increase in the ionic nanopore resistance and an accompanying current rectification upon illumination at high laser powers (tens of milliwatts). At lower laser powers, the resistance decreases monotonically with increasing power, followed by an abrupt transition to high resistances at a certain threshold power. A similar rapid transition, although at a lower threshold power, is observed when the power is instead swept from high to low power. This hysteretic behavior is found to be dependent on the rate of the power sweep. The photoresistance switching effect is attributed to plasmon-induced formation and growth of nanobubbles that reversibly block the ionic current through the nanopore from one side of the membrane. This explanation is corroborated by finite-element simulations of a nanobubble in the nanopore that show the switching and the rectification.

  5. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  6. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  7. Semiconductor Quantum Dot Structures for Integrated Optic Switches

    Science.gov (United States)

    2008-12-23

    quantum boxes. These pillars are extremely fragile at this stage and are set in place by placing a drop of BCB and spinning off the excess. After the... BCB has been cured, the top surface is cleaned off of the BCB using reactive ion etching. Another photolithographic stage is performed to delineate

  8. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  9. Acoustic charge manipulation in semiconductor nanostructures for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Voelk, Stefan

    2010-07-30

    Within this thesis, the influence of a surface acoustic wave (SAW) on the luminescence of semiconductor nanostructures is investigated. Beginning with the physics of low-dimensional semiconductor structures, the quantum mechanical and optical properties of quantum dot (QD) systems are discussed. In particular, intrinsic parameters of QDs such as morphology, composition, strain and occupation with carriers are taken into account. Subsequently, the influence of an applied electric field and of externally induced strain are introduced. From this general approach, the discussion is focused to quantum posts (QPs) which are columnar shaped semiconductor nanostructures. In contrast to conventional self-assembled QDs, the height of the QPs can be controlled by the epitaxial growth process. Due to the adjustable height, electronic states and therefore the exciton transition energies can be tailored. Furthermore, QPs are embedded in a matrix-quantum-well structure which has important influence on the carrier dynamic if a SAW is excited on the sample. Mainly, two effects have to be considered regarding the interaction of charge carriers with SAWs: deformation potential coupling and acousto-electric coupling. For the investigated material and used SAW frequencies, acousto-electric coupling dominates the interaction between charges and SAW. For a quantum well (QW) structure, the periodic band modulation dissociates excitons into sequential stripes of electrons and holes which then are conveyed by the SAW. This so called bipolar transport or charge conveyance effect can be used to inject carriers into remote QD structures and has already been demonstrated for QD ensembles. The injection of carriers into individual quantum posts is successfully demonstrated for the first time within this work. The spectrally resolved photoluminescence (PL) data of individual QPs show an unexpected switching of PL lines which cannot be induced by varying other parameters, e.g. the laser intensity

  10. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  11. Investigation of a metal-organic interface. Realization and understanding of a molecular switch

    Energy Technology Data Exchange (ETDEWEB)

    Neucheva, Olga [Forschungszentrum Juelich (DE). Institute of Bio- and Nanosystems (IBN), Functional Nanostructures at Surfaces (IBN-3)

    2010-07-01

    The field of molecular organic electronics is an emerging and very dynamic area. The continued trend to miniaturisation, combined with increasing complexity and cost of production in conventional semiconductor electronics, forces companies to turn their attention to alternatives that promise the next levels of scale at significantly lower cost. After consumer electronic devices based on organic transistors, such as TVs and book readers, have already been presented, molecular electronics is expected to offer the next breakthrough in feature size. Unfortunately, most of the organic/metal interfaces contain intrinsic defects that break the homogeneity of the interface properties. In this thesis, the electronic and structural properties of such defects were examined in order to understand the influence of the inhomogeneities on the quality of the interface layer. However, the main focus of this work was the investigation of the local properties of a single molecule. Taking advantage of the Scanning Tunnelling Microscope's (STM's) ability to act as a local probe, a single molecular switch was realized and studied. Moreover, in close collaboration with theory groups, the underlying mechanism driving the switching process was identified and described. Besides the investigation of the switching process, the ability of the STM to build nanostructures of different shapes from large organic molecules was shown. Knowing the parameters for realization and control of the switching process and for building the molecular corrals, the results of this investigation enable the reconstruction of the studied molecular ensemble and its deployment in electric molecular circuits, constituting a next step towards further miniaturization of electronic devices. (orig.)

  12. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    International Nuclear Information System (INIS)

    Pandey, R.K.

    2008-01-01

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

  13. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  14. Evaluation of 600V Superjunction Devices in Single Phase PFC Applications under CCM Operation

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper pr esents a power density/efficiency evaluation in single phase power factor correction (PFC) applications operating in continuous conduction mode (CCM). The comparison is based on semiconductor dynamic characterization and a mathematical model for prediction of the conducted electroma......This paper pr esents a power density/efficiency evaluation in single phase power factor correction (PFC) applications operating in continuous conduction mode (CCM). The comparison is based on semiconductor dynamic characterization and a mathematical model for prediction of the conducted...... electromagnetic interference (EMI). The dynamic characterization is based on a low inductive double pulse tester (DPT). The measured switching energy is used in order to evaluate the devices performance in a conventional PFC. This data is used together with the mathematical model for prediction of the conducted...... electromagnetic interference. The method allows comparing different devices and evaluating the performance as a function of the PFC power density and efficiency....

  15. Controller Architectures for Switching

    DEFF Research Database (Denmark)

    Niemann, Hans Henrik; Poulsen, Niels Kjølstad

    2009-01-01

    This paper investigate different controller architectures in connection with controller switching. The controller switching is derived by using the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization. A number of different architectures for the implementation of the YJBK parameterization...... are described and applied in connection with controller switching. An architecture that does not include inversion of the coprime factors is introduced. This architecture will make controller switching particular simple....

  16. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  17. A Mechanical Switch Using Spectral Microshifts

    Science.gov (United States)

    Mitchell, Gordon L.; Saaski, Elric W.; Hartl, James C.

    1989-02-01

    Among the simplest fiber optic sensors, are those which operate in a binary fashion; they were the first sensor types to be developed. Early experiments with fiber bundles and shutters produced demonstrations of, for example, displacement sensors. Typical applications range from position sensing for aircraft landing gear to counting objects on a production line. Because they frequently replace electrical snap action switches, binary sensors are generally called optical switches. Optical switch applications account for a much larger market than the more complex analog measurements discussed in the balance of this volume. This paper presents an optical switch concept that uses a single fiber and is tolerant of back reflections. The sensor element is a low finesse Fabry-Perot pressure sensor which replaces the electrical contact in a conventional snap action switch.

  18. Switching to Tenofovir Alafenamide, Coformulated With Elvitegravir, Cobicistat, and Emtricitabine, in HIV-Infected Patients With Renal Impairment: 48-Week Results From a Single-Arm, Multicenter, Open-Label Phase 3 Study.

    Science.gov (United States)

    Pozniak, Anton; Arribas, Jose R; Gathe, Joseph; Gupta, Samir K; Post, Frank A; Bloch, Mark; Avihingsanon, Anchalee; Crofoot, Gordon; Benson, Paul; Lichtenstein, Kenneth; Ramgopal, Moti; Chetchotisakd, Ploenchan; Custodio, Joseph M; Abram, Michael E; Wei, Xuelian; Cheng, Andrew; McCallister, Scott; SenGupta, Devi; Fordyce, Marshall W

    2016-04-15

    Tenofovir alafenamide (TAF) is a novel tenofovir prodrug with improved renal and bone safety compared with TDF-containing regimens. We report the 48 week safety and efficacy of a once-daily single tablet regimen of elvitegravir 150 mg (E), cobicistat 150 mg (C), emtricitabine 200 mg (F), and TAF 10 mg (E/C/F/TAF) in HIV-1-infected patients with mild to moderate renal impairment. We enrolled virologically suppressed HIV-1-infected subjects with estimated creatinine clearance (CrCl) 30-69 mL/min in a single-arm, open-label study to switch regimens to E/C/F/TAF. The primary endpoint was the change from baseline in glomerular filtration rate estimated using various formulae. This study is registered with ClinicalTrials.gov, number NCT01818596. We enrolled and treated 242 patients with mean age 58 years, 18% Black, 39% hypertension, 14% diabetes. Through week 48, no significant change in estimated CrCl was observed. Two patients (0.8%) discontinued study drug for decreased creatinine clearance, neither had evidence of renal tubulopathy and both had uncontrolled hypertension. Subjects had significant improvements in proteinuria, albuminuria, and tubular proteinuria (P Proteinuria, albuminuria and bone mineral density significantly improved. These data support the efficacy and safety of once daily E/C/F/TAF in HIV+ patients with mild or moderate renal impairment without dose adjustment.

  19. Theory of the optical properties of semiconductor nanostructures

    Science.gov (United States)

    Koch, S. W.; Meier, T.; Hoyer, W.; Kira, M.

    2002-04-01

    A microscopic many-body theory describing the optical and electronic properties of semiconductors and semiconductor nanostructures is briefly reviewed. At the semiclassical level, the optical response is computed using Maxwell's equations together with the semiconductor Bloch equations which describe the dynamics of the diagonal and the off-diagonal terms of the reduced single-particle density matrix. These equations include the coupling between the semiconductor and the optical field as well as Coulomb many-body interactions among the optically excited carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained from absorption spectra on the basis of the Kubo-Martin-Schwinger relation for conditions usually limited to the regime of optical gain (lasers). More generally, light emission has to be computed at a fully quantum mechanical level leading to semiconductor luminescence equations.

  20. Investigation of patterning effects in ultrafast SOA-based optical switches

    DEFF Research Database (Denmark)

    Xu, Jing; Zhang, Xinliang; Mørk, Jesper

    2010-01-01

    Ultrafast optical switching employing semiconductor optical amplifier (SOA) based optical switches has been demonstrated at bitrates up to 640 Gbit/s. However, patterning effects caused by relatively slow recovery processes in semiconductor structures remain as an important deteriorating factor...... that limits the ultimate speed at which SOA-based switches can be operated. In this paper, we investigate the patterning effects of SOA-based switches using a systematic approach. A simple condition for the lower bound limit of the bit pattern length that should be adopted in the performance evaluations...... of the switches is derived. It is shown that the minimum bit pattern length scales linearly with the bitrate and the recovery time of the SOA. To overcome the excessive computation time needed for numerical analysis at long pseudorandom binary sequence (PRBS) lengths, an effective method, i.e., periodic method...

  1. Performance Evaluation of Three-Level Z-Source Inverters Under Semiconductor-Failure Conditions

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Blaabjerg, Frede

    2009-01-01

    This paper evaluates and proposes various compensation methods for three-level Z-source inverters under semiconductor-failure conditions. Unlike the fault-tolerant techniques used in traditional three-level inverters, where either an extra phase-leg or collective switching states are used...... under semiconductor-failure conditions. For verifying these described performance features, PLECS simulation and experimental testing were performed with some results captured and shown in a later section for visual confirmation....

  2. Validating an infrared thermal switch as a novel access technology

    Directory of Open Access Journals (Sweden)

    Memarian Negar

    2010-08-01

    Full Text Available Abstract Background Recently, a novel single-switch access technology based on infrared thermography was proposed. The technology exploits the temperature differences between the inside and surrounding areas of the mouth as a switch trigger, thereby allowing voluntary switch activation upon mouth opening. However, for this technology to be clinically viable, it must be validated against a gold standard switch, such as a chin switch, that taps into the same voluntary motion. Methods In this study, we report an experiment designed to gauge the concurrent validity of the infrared thermal switch. Ten able-bodied adults participated in a series of 3 test sessions where they simultaneously used both an infrared thermal and conventional chin switch to perform multiple trials of a number identification task with visual, auditory and audiovisual stimuli. Participants also provided qualitative feedback about switch use. User performance with the two switches was quantified using an efficiency measure based on mutual information. Results User performance (p = 0.16 and response time (p = 0.25 with the infrared thermal switch were comparable to those of the gold standard. Users reported preference for the infrared thermal switch given its non-contact nature and robustness to changes in user posture. Conclusions Thermal infrared access technology appears to be a valid single switch alternative for individuals with disabilities who retain voluntary mouth opening and closing.

  3. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  4. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  5. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  6. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  7. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.

    1992-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

  8. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  9. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  10. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  11. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  12. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  13. Optoelectronic properties of semiconductor nanostructures

    Science.gov (United States)

    Maher, Kristin Nicole

    Semiconductor nanostructures have unique optical and electronic properties that have inspired research into their technological applications and basic science. This thesis presents approaches to the fabrication and characterization of optoelectronic devices incorporating individual semiconductor nanostructures. Nanowires of the II-VI semiconductors CdSe and CdS were synthesized using nanoparticle-catalysed solution-liquid-solid growth. Single-component nanowires and heterostructure nanowires with axial compositional modulation were generated using this method. Individual nanowires and nanocrystals were then incorporated into devices with a three-terminal field-effect transistor geometry. An experimental platform was developed which allows for simultaneous electrical characterization of devices and measurement of their optical properties. This setup enables the measurement of spatially and spectrally resolved electroluminescence (EL) and photoluminescence (PL) from individual nanostructures and nanostructure devices. It also allows the measurement of photon coincidence histograms for emitted light and the acquisition of photocurrent images via laser scanning microscopy. Electroluminescence was observed from individual CdSe nanocrystals contacted by gold electrodes. Concomitant transport measurements at low temperature showed clear evidence of Coulomb blockade at low bias voltage, with light only emitted from devices exhibiting asymmetric tunnel couplings between the nanocrystal and electrodes. Combined analyses of the data indicate that the resistances of the tunnel barriers are bias voltage dependent and that light emission results from the inelastic scattering of tunneling electrons. Three-terminal devices incorporating individual CdSe nanoNvires exhibited EL localized near the positively-biased electrode. Characterization of these devices by scanning photocurrent microscopy (SPCM) and Kelvin probe microscopy (KPM) indicates that while there are n-type Schottky

  14. Switching processes in financial markets.

    Science.gov (United States)

    Preis, Tobias; Schneider, Johannes J; Stanley, H Eugene

    2011-05-10

    For an intriguing variety of switching processes in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. Financial market fluctuations are characterized by many abrupt switchings creating upward trends and downward trends, on time scales ranging from macroscopic trends persisting for hundreds of days to microscopic trends persisting for a few minutes. The question arises whether these ubiquitous switching processes have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the transaction volume after each switching. Our findings can be interpreted as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in time intervals between transactions. We suggest that the well known catastrophic bubbles that occur on large time scales--such as the most recent financial crisis--may not be outliers but single dramatic representatives caused by the formation of increasing and decreasing trends on time scales varying over nine orders of magnitude from very large down to very small.

  15. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  16. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  17. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  18. Buck Converter with Soft-Switching Cells for PV Panel Applications

    Directory of Open Access Journals (Sweden)

    Cheng-Tao Tsai

    2016-03-01

    Full Text Available In power conversion of photovoltaic (PV energy, a hard-switching buck converter always generates some disadvantages. For example, serious electromagnetic interference (EMI, high switching losses, and stresses on an active switch (metal-oxide-semiconductor-field-effect-transistor, MOSFET, and high reverse-recovery losses of a freewheeling diode result in low conversion efficiency. To release these disadvantages, a buck converter with soft-switching cells for PV panel applications is proposed. To create zero-voltage-switching (ZVS features of the active switches, a simple active soft-switching cell with an inductor, a capacitor, and a MOSFET is incorporated into the proposed buck converter. Therefore, the switching losses and stresses of the active switches and EMI can be reduced significantly. To reduce reverse-recovery losses of a freewheeling diode, a simple passive soft-switching cell with a capacitor and two diodes is implemented. To verify the performance and the feasibility of the proposed buck converter with soft-switching cells for PV panel applications, a prototype soft-switching buck converter is built and implemented by using a maximum-power-point-tracking (MPPT method. Simulated and experimental results are presented from a 100 W soft-switching buck converter for PV panel applications.

  19. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  20. Intense terahertz excitation of semiconductors

    CERN Document Server

    Ganichev, S D

    2006-01-01

    This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

  1. Semiconductor radiation detectors device physics

    CERN Document Server

    Lutz, Gerhard

    1999-01-01

    Describes the field of modern semiconductor detectors used for energy and position measurement radiation. This book includes an introduction to semiconductor physics. It explains the principles of semiconductor radiation detectors, followed by formal quantitative analysis. It also covers electronic signal readout.

  2. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...

  3. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  4. Modelling switching-time effects in high-frequency power conditioning networks

    Science.gov (United States)

    Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

    1979-01-01

    Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

  5. Final report task order number B239641 between the Regents of the University of California and Institute of Experimental Physics task 2: Switch development

    International Nuclear Information System (INIS)

    Galakhov, I.V.; Gruzin, I.A.; Gudov, S.N.; Kirillov, G.A.; Logutenko, S.L.; Murugov, V.M.; Osin, V.A.; Zolotovskii, V.I.

    1994-01-01

    The LLNL project of the pulsed power system for the National Ignition Facility requires a switch with the following operational parameters: peak current of 400 kA, the transferred charge of 150 C, operating voltage of 25 kV, and reliable operating life of 10,000 shots. A review of high-power switches is given with detailed studies on vacuum switches and semiconductor switches

  6. Semiconductor nanowires: optics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, R. [University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA (United States); Lieber, C.M. [Harvard University, Department of Chemistry and Chemical Biology, and Division of Engineering Applied Sciences, Cambridge, MA (United States)

    2006-11-15

    Single crystalline semiconductor nanowires are being extensively investigated due to their unique electronic and optical properties and their potential use in novel electronic and photonic devices. The unique properties of nanowires arise owing to their anisotropic geometry, large surface to volume ratio, and carrier and photon confinement in two dimensions (1D system). Currently, tremendous efforts are being devoted to rational synthesis of nanowire structures with control over their composition, structure, dopant concentration, characterization, fundamental properties, and assembly into functional devices. In this article we will review the progress made in the area of nanowire optics and optoelectronic devices, including diodes, lasers, detectors, and waveguides, and will outline the general challenges that must be overcome and some potential solutions in order to continue the exponential progress in this exciting area of research. (orig.)

  7. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  8. A randomised, double-blind study in adults with major depressive disorder with an inadequate response to a single course of selective serotonin reuptake inhibitor or serotonin-noradrenaline reuptake inhibitor treatment switched to vortioxetine or agomelatine.

    Science.gov (United States)

    Montgomery, Stuart A; Nielsen, Rebecca Z; Poulsen, Lis H; Häggström, Lars

    2014-09-01

    This randomised, double-blind, 12-week study compared efficacy and tolerability of flexible-dose treatment with vortioxetine(10-20 mg/day) versus agomelatine (25-50 mg/day) in major depressive disorder patients with inadequate response to selective serotonin reuptake inhibitor (SSRI)/serotonin-noradrenaline reuptake inhibitor (SNRI) monotherapy. Patients were switched directly from SSRI/SNRI to vortioxetine or agomelatine. Primary endpoint was change from baseline to week 8 in the Montgomery-Åsberg Depression Rating Scale (MADRS) total score analysed by mixed model for repeated measurements, using a noninferiority test followed by a superiority test. Secondary endpoints included response and remission rates, anxiety symptoms(Hamilton Anxiety Rating Scale), Clinical Global Impression, overall functioning (Sheehan Disability Scale), health-related quality of life(EuroQol 5 Dimensions), productivity (work limitation questionnaire) and family functioning (Depression and Family Functioning Scale). Primary endpoint noninferiority was established and vortioxetine (n = 252) was superior to agomelatine (n = 241) by 2.2 MADRS points (pDepression and Family Functioning Scale at weeks 8 and 12. Fewer patients withdrew because of adverse events with vortioxetine (5.9% vs 9.5%). Adverse events (incidence ≥5%) were nausea, headache, dizziness and somnolence. Vortioxetine was noninferior and significantly superior to agomelatine in major depressive disorder patients with previous inadequate response to a single course of SSRI/SNRI monotherapy. Vortioxetine was safe and well tolerated.

  9. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  10. Nanomaterials based on II-VI Semiconductors

    OpenAIRE

    Cozzarini, Luca

    2012-01-01

    2010/2011 This thesis describes: (i) synthesis and characterization of colloidal nanocrystals of II-VI semiconductor compounds; (II) development of two novel materials using such nanocrystals as “building blocks”: (IIa) a nanocrystals/polymer composite, to be used as phosphor in LED-based lighting devices; (IIb) an inorganic, nano-structured multiphase material, showing a promising geometry as an electronic intermediate band material. Different typologies of nanocrystals (single-phase...

  11. Radar signal transmission and switching over optical networks

    Science.gov (United States)

    Esmail, Maged A.; Ragheb, Amr; Seleem, Hussein; Fathallah, Habib; Alshebeili, Saleh

    2018-03-01

    In this paper, we experimentally demonstrate a radar signal distribution over optical networks. The use of fiber enables us to distribute radar signals to distant sites with a low power loss. Moreover, fiber networks can reduce the radar system cost, by sharing precise and expensive radar signal generation and processing equipment. In order to overcome the bandwidth challenges in electrical switches, a semiconductor optical amplifier (SOA) is used as an all-optical device for wavelength conversion to the desired port (or channel) of a wavelength division multiplexing (WDM) network. Moreover, the effect of chromatic dispersion in double sideband (DSB) signals is combated by generating optical single sideband (OSSB) signals. The optimal values of the SOA device parameters required to generate an OSSB with a high sideband suppression ratio (SSR) are determined. We considered various parameters such as injection current, pump power, and probe power. In addition, the effect of signal wavelength conversion and transmission over fiber are studied in terms of signal dynamic range.

  12. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia; Peng, Fang Z.

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  13. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  14. Bipolar magnetic semiconductor in silicene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Farghadan, Rouhollah, E-mail: rfarghadan@kashanu.ac.ir

    2017-08-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  15. Bipolar magnetic semiconductor in silicene nanoribbons

    International Nuclear Information System (INIS)

    Farghadan, Rouhollah

    2017-01-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  16. A high-peak-power UV picosecond-pulse light source based on a gain-switched 1.55 microm laser diode and its application to time-resolved spectroscopy of blue-violet materials.

    Science.gov (United States)

    Sato, Aya; Kono, Shunsuke; Saito, Kyosuke; Sato, Ki-ichi; Yokoyama, Hiroyuki

    2010-02-01

    We generated sub-kilowatt peak-power and 6-ps duration 390-nm optical pulses via the fourth harmonic generation of amplified optical output from a gain-switched 1.55-microm laser diode. We obtained a power-conversion-efficiency of 12% from 1.55-microm to 390-nm light, and subsequently applied the ultraviolet pulses to time-resolved spectroscopy of blue-violet luminescent materials, including a Coumarine dye solution and nitride semiconductor materials using single-photon and two-photon excitation schemes.

  17. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  18. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  19. Rectification of graphene self-switching diodes: First-principles study

    Science.gov (United States)

    Ghaziasadi, Hassan; Jamasb, Shahriar; Nayebi, Payman; Fouladian, Majid

    2018-05-01

    The first principles calculations based on self-consistent charge density functional tight-binding have performed to investigate the electrical properties and rectification behavior of the graphene self-switching diodes (GSSD). The devices contained two structures called CG-GSSD and DG-GSSD which have metallic or semiconductor gates depending on their side gates have a single or double hydrogen edge functionalized. We have relaxed the devices and calculated I-V curves, transmission spectrums and maximum rectification ratios. We found that the DG-MSM devices are more favorable and more stable. Also, the DG-MSM devices have better maximum rectification ratios and current. Moreover, by changing the side gates widths and behaviors from semiconductor to metal, the threshold voltages under forward bias changed from +1.2 V to +0.3 V. Also, the maximum currents are obtained from 1.12 μA to 10.50 μA. Finally, the MSM and SSS type of all devices have minimum and maximum values of voltage threshold and maximum rectification ratios, but the 769-DG devices don't obey this rule.

  20. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  1. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  2. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  3. Active plasmonics in WDM traffic switching applications

    DEFF Research Database (Denmark)

    Papaioannou, S.; Kalavrouziotis, D.; Vyrsokinos, K.

    2012-01-01

    With metal stripes being intrinsic components of plasmonic waveguides, plasmonics provides a "naturally" energy-efficient platform for merging broadband optical links with intelligent electronic processing, instigating a great promise for low-power and small-footprint active functional circuitry....... The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce...... active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the smallest TO DLSPP-based Mach-Zehnder interferometric switch reported so far and showing its successful performance in 4310 Gb/s low-power and fast switching operation. The demonstration of the WDM...

  4. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  5. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    RCR    , (5) which considers all elastic scattering events on the energy shell kk EEE   , which is appropriate for all scattering...fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices and Microstructures 15, 225-228 (1994). 12. I. Dharssi and...εyy is consistently slightly tensile (≈ -1%), which agreed with theoretical calculations of εyy based on published values of elastic constants. An

  6. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  7. Semiconductor projectile impact detector

    Science.gov (United States)

    Shriver, E. L. (Inventor)

    1977-01-01

    A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

  8. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  9. Semiconductor detectors. Recent evolution

    International Nuclear Information System (INIS)

    Siffert, P.

    1977-01-01

    The recent evolution as well as the problems appearing in the use of semiconductor counters in both X and γ-ray as well as heavy ions spectroscopy are reviewed. For the photon counters the discussion is limited to cadmium telluride and mercuric iodide room temperature diodes, whereas for heavy ions, identification by means of thin ΔE/Δx counters and some problems related to the pulse amplitude in E detectors are considered [fr

  10. Higher-order photon bunching in a semiconductor microcavity

    DEFF Research Database (Denmark)

    Assmann, M.; Veit, F.; Bayer, M.

    2009-01-01

    in the single-mode emission of a semiconductor microcavity in the weak and strong coupling regimes. The counting statistics of single photons were recorded with picosecond time resolution, allowing quantitative measurement of the few-photon bunching inside light pulses. Our results show bunching behavior...

  11. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  12. Switchable diode effect in oxygen vacancy-modulated SrTiO{sub 3} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Xinqiang; Shuai, Yao; Wu, Chuangui; Luo, Wenbo; Sun, Xiangyu; Zeng, Huizhong; Bai, Xiaoyuan; Gong, Chaoguan; Jian, Ke; Zhang, Wanli [University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China); Zhang, Lu; Guo, Hongliang [University of Electronic Science and Technology of China, The Center for Robotics, Chengdu (China); Tian, Benlang [26th Institute of China Electronics Technology Group Corporation, Chongqing (China)

    2017-09-15

    SrTiO{sub 3} (STO) single crystal wafer was annealed in vacuum, and co-planar metal-insulator-metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n-n{sup +} junction or n{sup +}-n junction (n donated n-type semiconductor; n{sup +} donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n-n{sup +}/n{sup +}-n junction caused by the migration of the OVs under the electric field. (orig.)

  13. Optical Switching and Bit Rates of 40 Gbit/s and above

    DEFF Research Database (Denmark)

    Ackaert, A.; Demester, P.; O'Mahony, M.

    2003-01-01

    Optical switching in WDM networks introduces additional aspects to the choice of single channel bit rates compared to WDM transmission systems. The mutual impact of optical switching and bit rates of 40 Gbps and above is discussed....

  14. Analysis of Power Switching Losses Accounting Probe Modeling

    OpenAIRE

    Ammous , Kaiçar; Morel , Hervé; Ammous , Anis

    2010-01-01

    International audience; This paper focuses on the errors affecting the estimation of power switching losses in power semiconductor devices based on integration of the voltage by current product. It is shown that the measured waveforms are not simply delayed by the probes, but some overshoots and distortions are due to the probes, which may not easily be corrected. These effects are the source of errors, particularly in fast transients. This paper shows analyses of simulation and measurements,...

  15. Plasma erosion switch

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Goldstein, S.A.; Miller, P.A.

    1976-01-01

    The plasma erosion switch is a device capable of initially carrying high currents, and then of opening in nanoseconds to stand off high voltages. It depends upon the erosion of a plasma which initially fills the switch. The sheath between the plasma and the cathode behaves as a diode with a rapidly increasing A-K gap. Preliminary tests of the switch on the Proto I accelerator at Sandia will be described. In these tests, the switch consisted of a cylinder of highly ionized plasma four inches in diameter and one-inch thick surrounding a one-inch cathode. The switch shorted out prepulse voltages and allowed energy to be stored in the diode inductance outside the switch until the accelerator current reached 75 kA. The switch impedance then rose rapidly to approximately 100 ω in 5 nanoseconds, whereupon the accelerator current transferred to the cathode. Current rise rates of 3.10 13 A/sec were limited by cathode turn-on. Voltage rise rates of 10 15 V/sec were achieved. The elimination of prepulse and machine turn-on transients allowed A-K gaps of 2 mm to be used with 2.5 MV pulses, yielding average E fields of 12 MV/cm. Staged versions of the device are being built and should improve rise rates. The switch shows promise for use with future, higher power, lower inductance machines

  16. Switched reluctance motor drives

    Indian Academy of Sciences (India)

    Davis RM, Ray WF, Blake RJ 1981 Inverter drive for switched reluctance: circuits and component ratings. Inst. Elec. Eng. Proc. B128: 126-136. Ehsani M. 1991 Position Sensor elimination technique for the switched reluctance motor drive. US Patent No. 5,072,166. Ehsani M, Ramani K R 1993 Direct control strategies based ...

  17. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W

    2013-06-13

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  18. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  19. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  20. Self-compensation in semiconductors

    Science.gov (United States)

    Tsur, Y.; Riess, I.

    1999-09-01

    The problem of self-compensation of charged dopants is analyzed. Special emphasis is given to dopants in binary oxides. It is shown that one can determine the degree of self-compensation from the properties of the host material and dopant concentration alone. It is further shown that for a native p-type semiconductor, donors are compensated, mostly, by native ionic defects. On the other hand, doping with acceptors allows us to increase significantly the hole concentration, i.e., self-compensation is low under high doping levels. For a native n-type semiconductor the opposite is true, namely, extrinsic acceptors are mainly compensated by native ionic defects. It is shown that the changes in concentration of all the charged defects are simply related by a single factor, the doping factor f, or its power fk where k depends solely on the defect's charge. Quantitative calculations of f and defect concentrations are presented for Cu2O, which was used as a model material. It is found that for p-type Cu2O doping with donors results in f within the range of 1-10, depending on the dopant concentration and P(O2). This means that the hole concentration decreases and the electron concentration increases at most by a factor of 10. Therefore one does not expect to obtain a changeover from p- to n-type cuprous oxide by doping, under equilibrium conditions. Most of the donors are compensated by negative ionic defects. Self-compensation in the presence of amphoteric defects and Fermi level stabilization are discussed, using the former formalism.