Fabrication of free standing LiNbO3 single crystal micro-platelets and their integration to Si-on-insulator platforms

International Nuclear Information System (INIS)

Lee, Yoo Seung; Lee, Sang-Shin; Lee, Wan-Gyu; Steier, William H.

2011-01-01

Free standing single crystal LiNbO 3 micro-platelets (mm long and 1 μm thick) have been obtained from a z-cut LiNbO 3 wafer by ion implantation and thermal treatment. X-ray diffraction measurement has proved that they have a single crystal structure. Their surface roughness and film quality have been investigated by atomic force microscope and field emission scanning electron microscope. These micro-platelets are transferable and bondable to other materials which require material properties of LiNbO 3 . They have been transferred, positioned and bonded to SiO 2 /LiNbO 3 , SiO 2 /Si, and Si-on-insulator (SOI: Si/SiO 2 /Si) by direct bonding method with optimum annealing conditions. For SiO 2 /Si and SOI substrates, there were large thermal mismatch between LiNbO 3 and Si. They were, however, bonded at high temperature since these ultra thin micro-platelets were flexible and stretchable. Finally, to realize multifunctional SOI applications, a hybrid structure of LiNbO 3 film and Si waveguide has been demonstrated.

A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constant

Science.gov (United States)

Abrosimov, N. V.; Aref'ev, D. G.; Becker, P.; Bettin, H.; Bulanov, A. D.; Churbanov, M. F.; Filimonov, S. V.; Gavva, V. A.; Godisov, O. N.; Gusev, A. V.; Kotereva, T. V.; Nietzold, D.; Peters, M.; Potapov, A. M.; Pohl, H.-J.; Pramann, A.; Riemann, H.; Scheel, P.-T.; Stosch, R.; Wundrack, S.; Zakel, S.

2017-08-01

A metrological challenge is currently underway to replace the present definition of the kilogram. One prerequisite for this is that the Avogadro constant, N A, which defines the number of atoms in a mole, needs to be determined with a relative uncertainty of better than 2  ×  10-8. The method applied in this case is based on the x-ray crystal density experiment using silicon crystals. The first attempt, in which silicon of natural isotopic composition was used, failed. The solution chosen subsequently was the usage of silicon highly enriched in 28Si from Russia. First, this paper reviews previous efforts from the very first beginnings to an international collaboration with the goal of producing a 28Si single crystal with a mass of 5 kg, an enrichment greater than 0.9999 and of sufficient chemical purity. Then the paper describes the activities of a follow-up project, conducted by PTB, to produce a new generation of highly enriched silicon in order to demonstrate the quasi-industrial and reliable production of more than 12 kg of the 28Si material with enrichments of five nines. The intention of this project is also to show the availability of 28Si single crystals as a guarantee for the future realisation of the redefined kilogram.

Growth and characterization of Nd:Bi12SiO20 single crystal

Science.gov (United States)

Xu, Honghao; Zhang, Yuanyuan; Zhang, Huaijin; Yu, Haohai; Pan, Zhongben; Wang, Yicheng; Sun, Shangqian; Wang, Jiyang; Boughton, R. I.

2012-09-01

A Nd:Bi12SiO20 crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10-6 K-1 over the temperature range of 295-775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg-1 k-1 and 0.584 mm2/s, respectively at 302 K. The density was measured to be 9.361 g/cm3 by the buoyancy method. The thermal conductivity of Nd:Bi12SiO20 was calculated to be 1.328 Wm-1 K-1 at room temperature (302 K). The refractive index of Nd:Bi12SiO20 was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi12SiO20 crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi12SiO20 can serve as a laser crystal.

Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

Science.gov (United States)

Qamar, Afzaal; Dao, Dzung Viet; Phan, Hoang-Phuong; Dinh, Toan; Dimitrijev, Sima

2016-08-01

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P 12 = ( 5.3 ± 0.4 ) × 10 - 11 Pa - 1 , P 11 = ( - 2.6 ± 0.6 ) × 10 - 11 Pa - 1 , and P 44 = ( 11.42 ± 0.6 ) × 10 - 11 Pa - 1 . Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.

Growth of ZrSiO4 single crystal by flux method

International Nuclear Information System (INIS)

Ushio, Masumi; Nishitani, Yoshinari

1982-01-01

ZrSiO 4 single crystals were grown from the Na 2 O.3 V 2 O 5 fluxed melt at constant soaking temperatures of 900 0 C and 1000 0 C for periods up to 1710h, using the natural zircon seeds. Temperature difference between the seed and nutrient was 0.5 -- 5 0 C. A solubility curve of the natural zircon in Na 2 O.3 V 2 O 5 was determined. It was found that about 5.7g of the natural crystal dissolved in Na 2 O.3 V 2 O 5 in 48h at 1000 0 C and about 7.5g at 1200 0 C. .the maximum growth weight was about 0.35 2 g under conditions of the temperature difference of 2 0 C and the soaking for 1205h at 1000 0 C. The grown crystal was initially bounded with the c-, m-, p-, a-planes and very small planes consisting of the u- and x-, and finally bounded with the m- and p-planes. The observed linear growth rates of planes of ZrSiO 4 single crystals were in the following order:a(100) > c(001) > p(111) > m(110). The growth rates of a- and m-planes were about 5 -- 7 x 10 -4 mm/h and 0.9 -- 1.0 x 10 -4 mm/h, respectively. The growth hillocks of rounded triangular shape and elliptic shape extended to the direction of c-axis, were observed on the p- and m-planes, respectively. The observed step distence of the spiral and the step height were about 0.97 5 μm and 0.17 2 μm, respectively. The observed linear rate of advance of the step on the m-plane was about 0.4 0 -- 1.2 x 10 -8 cm/s. A linear growth rate of the m-plane was then calculated to be 0.2 5 -- 0.7 1 x 10 -4 mm/h by the BCF theory, which agreed in order of magnitude with the observes growth rate of the m-plabe. (author)

Anisotropy of single-crystal 3C–SiC during nanometric cutting

International Nuclear Information System (INIS)

Goel, Saurav; Stukowski, Alexander; Luo, Xichun; Agrawal, Anupam; Reuben, Robert L

2013-01-01

3C–SiC (the only polytype of SiC that resides in a diamond cubic lattice structure) is a relatively new material that exhibits most of the desirable engineering properties required for advanced electronic applications. The anisotropy exhibited by 3C–SiC during its nanometric cutting is significant, and the potential for its exploitation has yet to be fully investigated. This paper aims to understand the influence of crystal anisotropy of 3C–SiC on its cutting behaviour. A molecular dynamics simulation model was developed to simulate the nanometric cutting of single-crystal 3C–SiC in nine (9) distinct combinations of crystal orientations and cutting directions, i.e. (1 1 1) 〈−1 1 0〉, (1 1 1) 〈−2 1 1〉, (1 1 0) 〈−1 1 0〉, (1 1 0) 〈0 0 1〉, (1 1 0) 〈1 1 −2〉, (0 0 1) 〈−1 1 0〉, (0 0 1) 〈1 0 0〉, (1 1 −2) 〈1 −1 0〉 and (1 −2 0) 〈2 1 0〉. In order to ensure the reliability of the simulation results, two separate simulation trials were carried out with different machining parameters. In the first trial, a cutting tool rake angle of −25°, d/r (uncut chip thickness/cutting edge radius) ratio of 0.57 and cutting velocity of 10 m s −1 were used whereas a second trial was done using a cutting tool rake angle of −30°, d/r ratio of 1 and cutting velocity of 4 m s −1 . Both the trials showed similar anisotropic variation. The simulated orthogonal components of thrust force in 3C–SiC showed a variation of up to 45%, while the resultant cutting forces showed a variation of 37%. This suggests that 3C–SiC is highly anisotropic in its ease of deformation. These results corroborate with the experimentally observed anisotropic variation of 43.6% in Young's modulus of 3C–SiC. The recently developed dislocation extraction algorithm (DXA) [1, 2] was employed to detect the nucleation of dislocations in the MD simulations of varying cutting orientations

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

Science.gov (United States)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-05-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values ( θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate ( θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

Science.gov (United States)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-04-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values (θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate (θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM

Crystal Growth of Ca3Nb(Ga1−xAlx3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

Directory of Open Access Journals (Sweden)

Yuui Yokota

2015-08-01

Full Text Available Ca3Nb(Ga1−xAlx3Si2O14 (CNGAS single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

Growth of Ba-hexaferrite films on single crystal 6-H SiC

International Nuclear Information System (INIS)

Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.

2006-01-01

Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits

Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire

International Nuclear Information System (INIS)

Yang, W F; Lee, S J; Liang, G C; Whang, S J; Kwong, D L

2008-01-01

In this work, we fabricated an Si 1-x Ge x nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si 1-x Ge x NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-x Ge x NWs. It is found that both undoped and phosphorus-doped Si 1-x Ge x NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I on ∼100 nA and I on /I off ∼10 5 are achieved from phosphorus-doped Si 1-x Ge x NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec -1 was obtained by reducing HfO 2 gate dielectric thickness. A comprehensive study on SBH between the Si 1-x Ge x NW channel and Pd source/drain shows that a doped Si 1-x Ge x NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH

Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)3Si2O14 bulk single crystal

Science.gov (United States)

Igarashi, Yu; Yokota, Yuui; Ohashi, Yuji; Inoue, Kenji; Yamaji, Akihiro; Shoji, Yasuhiro; Kamada, Kei; Kurosawa, Shunsuke; Yoshikawa, Akira

2018-03-01

Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant ε11T/ε0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

Lu.sub.2./sub.SiO.sub.5./sub.:Ce and Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystals and single crystalline film scintillators: comparisom of the luminescent and scintillation properties

Czech Academy of Sciences Publication Activity Database

Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Zorenko, T.; Grinyov, B.; Sidletskiy, O.; Fedorov, A.; Mareš, Jiří A.; Nikl, Martin; Kučera, M.

2013-01-01

Roč. 56, SEP (2013), s. 84-89 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation 2012 /8./, LUMDETR 2012. Halle (Saale), 10.09.2012-14.09.2012] R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : Lu 2 SiO 5 :Ce * Y 2 SiO 2 * single crystalline film, * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.140, year: 2013

Channeling effect studies in V3Si single crystals

International Nuclear Information System (INIS)

Meyer, O.

1978-01-01

Angular scans through the [100] and [110] channeling directions in V 3 Si have been performed using elastically scattered He ions for the V-rows and the 28 Si(d,p 8 ) 29 Si reaction for the Si-rows. The amplitude of thermal vibration perpendicular to the V-chains was found to be larger than that at 45 0 to them. The Si atoms however vibrate isotropically. The use of multi-row potentials instead of single-row potentials leads to better overall agreement between measured and calculated critical angles. (Auth.)

X-ray diffraction study of stacking faults in a single crystal of 2H SiC

International Nuclear Information System (INIS)

Pandey, D.; Krishna, P.

1977-01-01

The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been investigated by studying the broadening of x-ray diffraction maxima. The intensity distribution along the 10.1 reciprocal lattice row was recorded on a four-circle, computer-controlled single crystal diffractometer. The 10.1 reflections with 1 even were found to be considerably broadened showing that the stacking faults present are predominantly intrinsic faults ( both growth and deformation faults). A careful study of the half-width values of different 10.1 reflections revealed that the fault probabilities are large. Exact expressions for the diffracted intensity and the observable diffraction effects were obtained and these were then used to calculate the deformation and growth fault probabilities which were found to be 0.20 and 0.11 respectively. It is suggested that several deformation fault configurations result from a clustering of growth faults. The results obtained are compared with those obtained for 2H ZnS crystals. (author)

Laser induced single-crystal transition in polycrystalline silicon

International Nuclear Information System (INIS)

Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.

1978-01-01

Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de

Effect of neutron irradiation on single crystal V3Si

International Nuclear Information System (INIS)

Viswanathan, R.; Caton, R.; Cox, D.E.; Guha, A.; Sarachik, M.P.; Smith, F.W.; Testardi, L.R.

1977-01-01

We We have investigated the effect of successive neutron irradiation up to a fluence of approximately 2 x 10 19 n/cm 2 , by measurements of heat capacity, susceptibility, resistivity, acoustic velocity and neutron diffraction in a single crystal V 3 Si. We find that for low level doses (phi t greater than or equal to 3.5 x 10 18 n/cm 2 ) (a) the structural transformation is very sensitive, whereas the suerconducting transition temperature, T/sub c/, is hardly affected, and (b) except for low temperature heat capacity, most of the other measurements show very little change. For the highest fluence of 2 x 10 19 n/cm 2 used to date, the T/sub c/ dropped to 7.5 K with large changes in the linear heat capacity coefficient, magnetic susceptibility and sound velocity. These results are discussed briefly in this paper

Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

Science.gov (United States)

Grimberg, I.; Weiss, B. Z.

1995-04-01

The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

A review on solar cells from Si-single crystals to porous materials and quantum dots.

Science.gov (United States)

Badawy, Waheed A

2015-03-01

Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

A review on solar cells from Si-single crystals to porous materials and quantum dots

Directory of Open Access Journals (Sweden)

Waheed A. Badawy

2015-03-01

Full Text Available Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed.

Single-crystal X-ray diffraction study of Cs2Er[Si6O14]F and Cs2Er[Si4O10]F

International Nuclear Information System (INIS)

Dabic, Predrag; Kremenovic, Aleksandar; Vulic, Predag; Kahlenberg, Volker; Schmidmair, Daniela

2016-01-01

Single-crystal growth experiments in the system CsF-Er 2 O 3 -SiO 2 resulted in the simultaneous crystallization of two chemically related compounds within the same run: Cs 2 Er[Si 6 O 14 ]F (phase I) and Cs 2 Er[Si 4 O 10 ]F (phase II). They represent the first examples for cesium erbium silicates containing fluorine. Basic crystallographic data are - phase I: space group Cmca, a=17.2556(6) Aa, b=24.6565(7) Aa, c=14.4735(5) Aa, V=6157.9(3) Aa 3 , Z=16; phase II: space group Pnma, a=22.3748(7) Aa, b=8.8390(2) Aa, c=11.9710(4) Aa, V=2367.5(1) Aa 3 , Z=8. The structures were determined by direct methods and refined to residuals of R(vertical stroke F vertical stroke)=0.0229 for 2920 (phase I) and 0.0231 for 2314 (phase II) independent observed reflections with I>2σ(I). The structure of phase I represents a previously unknown structure type with a three dimensional tetrahedral framework consisting of Q 3 and Q 4 groups in the ratio 2:1. Basic building units of the network are unbranched sechser single-chains running parallel to [001]. The network can be conveniently built up from the condensation of tetrahedral layers parallel to (010) or (100), respectively. The crystal structure of phase II can be classified as a tubular or columnar chain silicate indicating that the backbones of the structure are multiple chains of silicate tetrahedra. This structure is isotypic to a Cs 2 Y[Si 4 O 10 ]F, a compound that has been characterized previously. Alternatively, both compounds can be described as mixed octahedral-tetrahedral frameworks, which can be classified according to their polyhedral microensembles. A topological analysis of both nets is presented.

Solid-state syntheses and single-crystal characterizations of three tetravalent thorium and uranium silicates

International Nuclear Information System (INIS)

Jin, Geng Bang; Soderholm, L.

2015-01-01

Colorless crystals of ThSiO 4 (huttonite) (1) and (Ca 0.5 Na 0.5 ) 2 NaThSi 8 O 20 (2) have been synthesized by the solid-state reactions of ThO 2 , CaSiO 3 , and Na 2 WO 4 at 1073 K. Green crystals of (Ca 0.5 Na 0.5 ) 2 NaUSi 8 O 20 (3) have been synthesized by the solid-state reactions of UO 2 , CaSiO 3 , and Na 2 WO 4 at 1003 K. All three compounds have been characterized by single-crystal X-ray diffraction. Compound 1 adopts a monazite-type three-dimensional condensed structure, which is built from edge- and corner-shared ThO 9 polyhedra and SiO 4 tetrahedra. Compounds 2 and 3 are isostructural and they crystallize in a steacyite-type structure. The structure consists of discrete pseudocubic [Si 8 O 20 ] 8− polyanions, which are connected by An 4+ cations into a three-dimensional framework. Each An atom coordinates to eight monodentate [Si 8 O 20 ] 8− moieties in a square antiprismatic geometry. Na + and Ca 2+ ions reside in the void within the framework. Raman spectra of 1, 2, and 3 were collected on single crystal samples. 1 displays more complex vibrational bands than thorite. Raman spectra of 2 and 3 are analogous with most of vibrational bands located at almost the same regions. - Graphical abstract: A Raman spectrum and crystal structures of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U), which contain pseudocubic [Si 8 O 20 ] 8− polyanions and eight-coordinate An 4+ cations. - Highlights: • Single crystal growth of three tetravalent actinide silicates from melts. • Single-crystal structures and Raman spectra of (Ca 0.5 Na 0.5 ) 2 NaAnSi 8 O 20 (An=Th, U). • First report of Raman spectrum of huttonite on single crystal samples

The spin chirality in MnSi single crystal probed by small angle scattering with polarized neutrons

International Nuclear Information System (INIS)

Okorokov, A.I.; Grigoriev, S.V.; Chetverikov, Yu.O.; Georgii, R.; Boeni, P.; Eckerlebe, H.; Pranzas, K.; Roessli, B.

2004-01-01

The weak itinerant ferromagnet MnSi orders with a left-handed helical spin structure below T C =29 K. The helicity with a vector m=[S 1 xS 2 ]/S 2 along the crystallographic axis [1 1 1] is realized by an antisymmetric Dzyaloshinski-Moriya interaction. The small angle diffraction study with polarized neutrons on a single MnSi crystal was performed within the temperature range from 10 K to T C and the magnetic field B from 1 to 350 mT. The single crystal was oriented in such a way that two axes [1 1 1] and [1 1 -1] were set in a plane perpendicular to the incident beam. Four major diffraction peaks at ±q 1 and ±q 2 along the axes and four minor peaks at q=±q 1 ±q 2 were observed. The intensity I p =I(+P 0 )+I(-P 0 ), the polarization P p =[I(+P 0 )-I(-P 0 )]/I p and the position q p of the peaks were measured as a function of the temperature and the magnetic field. From intensity of the peaks the chiral critical exponent is obtained as β=0.47±0.04

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

Science.gov (United States)

Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

2014-05-01

A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

International Nuclear Information System (INIS)

Huang Huan; Li Simian; Zhai Fengxiao; Wang Yang; Lai Tianshu; Wu Yiqun; Gan Fuxi

2011-01-01

Highlights: → We reported crystallization dynamics of a novel SiSb phase change material. → We measured optical constants of as-deposited and irradiated SiSb areas. → Optical properties of as-deposited and irradiated SiSb thin film were compared. → Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. → The heat conduction effect of lower metal layer of multi-layer films was studied. - Abstract: Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.

Thermopower, electrical and Hall conductivity of undoped and doped iron disilicide single crystals

Energy Technology Data Exchange (ETDEWEB)

Heinrich, A; Behr, G; Griessmann, H; Teichert, S; Lange, H

1997-07-01

The electrical transport properties of {beta}-FeSi{sub 2} single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conductivity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeneity range of {beta}-FeSi{sub 2} which is explained by different intrinsic defects at the Si-rich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behavior determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

Na-Si binary phase diagram and solution growth of silicon crystals

International Nuclear Information System (INIS)

Morito, H.; Yamada, T.; Ikeda, T.; Yamane, H.

2009-01-01

In the present study, a Na-Si binary phase diagram was first presented from the results of differential thermal analysis and X-ray diffraction. Based on the phase diagram, we performed low-temperature formation of single crystals, film and porous bulk of Si by vaporizing Na from a Na-Si melt at 800 or 900 deg. C.

The influence of Si on the superconducting properties of LiFeAs single crystals

International Nuclear Information System (INIS)

Shlyk, L; Bischoff, M; Niewa, R

2012-01-01

The results of Si doping on the superconducting transition temperature, critical current density, irreversibility field, upper critical field, coherence length and magnetic relaxation of LiFeAs single crystals are reported for H ∥ c. The superconducting transition temperature of the Si doped sample decreases by about of 6.4 K/at.%, which is likely due to the pair breaking effect. The presence of a secondary high-field fishtail maximum, which shifts progressively with temperature, is associated with the extrinsic pinning centers created by Si. The increase of the critical current densities in intermediate magnetic fields of about three times as compared to our undoped material indicates that very small amounts of Si act as effective pinning sites for the flux pinning enhancement in the material. Pinning force curves measured at different temperatures obey a normalized form of Kramer’s law, which indicates that the critical current density is limited by one predominant flux pinning mechanism. Analysis of the temperature and field dependences of the magnetic relaxation is consistent with the collective pinning model. The magnetic relaxation measurements combined with the peak position of the critical current density in the B–T phase diagram suggest an elastic–plastic transition of the vortex lattice at higher temperatures and fields. (paper)

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

Single Crystals Grown Under Unconstrained Conditions

Science.gov (United States)

Sunagawa, Ichiro

Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).

Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.

Science.gov (United States)

Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro

2016-01-19

We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.

Properties of laser-crystallized polycrystalline SiGe thin films

Energy Technology Data Exchange (ETDEWEB)

Weizman, Moshe

2008-06-06

In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0crystallization of amorphous Si{sub 1-x}Ge{sub x} thin films with 0.3SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0crystallization method and Ge content. The defect density for solid-phase crystallized SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

Twinning processes in Cu-Al-Ni martensite single crystals investigated by neutron single crystal diffraction method

Czech Academy of Sciences Publication Activity Database

Molnar, P.; Šittner, P.; Novák, V.; Lukáš, Petr

2008-01-01

Roč. 481, Sp.Iss.SI (2008), s. 513-517 ISSN 0921-5093 R&D Projects: GA AV ČR IAA100480704 Institutional research plan: CEZ:AV0Z10480505 Keywords : Cu-Al-Ni * single crystals * neutron diffraction Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.806, year: 2008

Shock and Release Data on Forsterite (Mg2SiO4) Single Crystals

Science.gov (United States)

Root, S.; Townsend, J. P.; Shulenburger, L.; Davies, E.; Kraus, R. G.; Spaulding, D.; Stewart, S. T.; Jacobsen, S. B.; Mattsson, T. R.

2016-12-01

The Kepler mission has discovered numerous extra-solar rocky planets with sizes ranging from Earth-size to the super-Earths with masses 40 times larger than Earth. The solid solution series of (Mg, Fe)2SiO4 (olivine) is a major component in the mantle of Earth and likely these extra-solar rocky planets. However, understanding how the (Mg, Fe)2SiO4 system behaves at Earth like and super-Earth like pressures is still unknown. Using Sandia's Z machine facility, we shock compress single crystal forsterite, the Mg end-member of the olivine series. Solid aluminum flyers are accelerated up to 28 km/s to generate steady shock states up to 950 GPa. Release states from the Hugoniot are determined as well. In addition to experiments, we perform density functional theory (DFT) calculations to examine the potential phases along the Mg2SiO4 Hugoniot. We compare our results to other recent shock experiments on forsterite. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Crystal growth of the intermetallic compound Nd{sub 2}PdSi{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Xu, Y. [IFW Dresden, Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Helmholtzstr. 20, 01171 Dresden (Germany); State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Loeser, W.; Blum, C.G.F.; Buechner, B. [IFW Dresden, Leibniz-Institut fuer Festkoerper- und Werkstoffforschung, Helmholtzstr. 20, 01171 Dresden (Germany); Tang, F. [Institut fuer Festkoerperphysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Liu, L. [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

2011-02-15

Nd{sub 2}PdSi{sub 3} single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibits congruent melting behavior at a liquidus temperature of about 1790 C. The actual crystal composition (35.3 {+-} 0.5) at.% Nd, (16.2 {+-} 0.5) at.% Pd, and (48.5 {+-} 0.5) at.% Si is slightly depleted in Pd and Si with respect to the nominal stoichiometry. Therefore, the gradual accumulation of these elements in the traveling zone led to a decrease of the operating temperature during the growth process. Single crystalline samples exhibit a large anisotropy due to the crystal electric field effect and order ferromagnetically below the Curie temperature T{sub C}=15.1 K. The [001] orientation was identified as the magnetic easy axis at low temperatures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Luminescence and scintillation timing characteristics of (Lu{sub x}Gd{sub 2−x})SiO{sub 5}:Ce single crystals

Energy Technology Data Exchange (ETDEWEB)

Yawai, Nattasuda; Chewpraditkul, Warut; Sakthong, Ongsa [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Chewpraditkul, Weerapong, E-mail: weerapong.che@kmutt.ac.th [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Wantong, Kriangkrai [Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok10140 (Thailand); Szczesniak, Tomasz; Swiderski, Lukasz; Moszynski, Marek [National Centre for Nuclear Research, A. Soltana 7, PL 05-400 Otwock-Swierk (Poland); Sidletskiy, Oleg [Institute for Scintillation Materials NAS of Ukraine, 60 Nauky Avenue, 61001 Kharkiv (Ukraine)

2017-02-01

The luminescence and scintillation characteristics of cerium-doped lutetium-gadolinium orthosilicate (Lu{sub x}Gd{sub 2−x}SiO{sub 5}:Ce; x=0, 0.8, 1.8) single crystals were investigated. At 662 keV γ-rays, the light yield of 29,800±3000 ph MeV{sup −1} obtained for Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce is higher than that of 20,200±2000 and 11,800±1200 ph MeV{sup −1} obtained for Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce and Gd{sub 2}SiO{sub 5}:Ce, respectively. The fast component decay time of 32, 18 and 17 ns was measured in the scintillation decay of Gd{sub 2}SiO{sub 5}:Ce, Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce and Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce, respectively. The coincidence time spectra for 511 keV annihilation quanta were measured in reference to a fast BaF{sub 2} detector and time resolution was discussed in terms of a number of photoelectrons and decay time of the fast component. The mass attenuation coefficient for studied crystals at 60 and 662 keV γ-rays was also evaluated and discussed. - Highlights: • Scintillation timing characteristics of Lu{sub x}Gd{sub 2−x}SiO{sub 5}:Ce crystals are studied. • Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce exhibits excellent light yield and timing response. • Energy resolution of 6% @662 keV is obtained for Lu{sub 0.8}Gd{sub 1.2}SiO{sub 5}:Ce. • Coincidence time resolution of 368 ps is obtained for Lu{sub 1.8}Gd{sub 0.2}SiO{sub 5}:Ce.

Density functional theory for calculation of elastic properties of orthorhombic crystals: Application to TiSi2

International Nuclear Information System (INIS)

Ravindran, P.; Fast, L.; Korzhavyi, P.A.; Johansson, B.; Wills, J.; Eriksson, O.

1998-01-01

A theoretical formalism to calculate the single crystal elastic constants for orthorhombic crystals from first principle calculations is described. This is applied for TiSi 2 and we calculate the elastic constants using a full potential linear muffin-tin orbital method using the local density approximation (LDA) and generalized gradient approximation (GGA). The calculated values compare favorably with recent experimental results. An expression to calculate the bulk modulus along crystallographic axes of single crystals, using elastic constants, has been derived. From this the calculated linear bulk moduli are found to be in good agreement with the experiments. The shear modulus, Young's modulus, and Poisson's ratio for ideal polycrystalline TiSi 2 are also calculated and compared with corresponding experimental values. The directional bulk modulus and the Young's modulus for single crystal TiSi 2 are estimated from the elastic constants obtained from LDA as well as GGA calculations and are compared with the experimental results. The shear anisotropic factors and anisotropy in the linear bulk modulus are obtained from the single crystal elastic constants. From the site and angular momentum decomposed density of states combined with a charge density analysis and the elastic anisotropies, the chemical bonding nature between the constituents in TiSi 2 is analyzed. The Debye temperature is calculated from the average elastic wave velocity obtained from shear and bulk modulus as well as the integration of elastic wave velocities in different directions of the single crystal. The calculated elastic properties are found to be in good agreement with experimental values when the generalized gradient approximation is used for the exchange and correlation potential. copyright 1998 American Institute of Physics

Aluminum-rich mesoporous MFI - type zeolite single crystals

DEFF Research Database (Denmark)

Kustova, Marina; Kustov, Arkadii; Christensen, Christina Hviid

2005-01-01

Zeolitcs are crystalline materials, which are widely used as solid acid catalysts and supports in many industrial processes. Recently, mesoporous MFI-type zeolite single crystals were synthesized by use of carbon particles as a mesopore template and sodium aluminate as the aluminum Source....... With this technique, only zeolites with relatively low Al contents were reported (Si/Al ratio about 100). In this work, the preparation of aluminum-rich mesoporous MFI-type zeolite single crystals (Si/Al similar to 16-50) using aluminum isopropoxide as the aluminum Source is reported for the first time. All samples...... are characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), ammonia temperature programmed desorption (NH3-TPD), and N-2 adsorption measurements. The obtained zeolites combine the high crystallinity and the characteristic micropores of zeolites with an intracrystalline mesopore system...

Single Crystal Filters for Neutron Spectrometry

International Nuclear Information System (INIS)

Habib, N.

2008-01-01

A study of neutron transmission properties trough a large single crystals specimens of Si, Ge, Pb, Bi and sapphire at 300 K and 80 K have been made for a wide range of neutron energies. The effectiveness of such filters is given by the ratio of the total cross-section of unwanted epithermal neutrons to that the desired thermal neutron beam and by the optimum choice of the crystal orientation, its mosaic spread, thickness and temperature.Our study indicates that sapphire is significantly more effective than the others for a wide range of neutron energies

Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

International Nuclear Information System (INIS)

Wang, H.; Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D.; Huang, Y.D.

2016-01-01

An Er 3+ -doped Gd 2 SiO 5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er 3+ –Yb 3+ co-doped Gd 2 SiO 5 crystal was evaluated.

Non-isothermal crystallization kinetics and phase transformation of Bi2O3-SiO2 glass-ceramics

Directory of Open Access Journals (Sweden)

Guo H.W.

2011-01-01

Full Text Available The Bi2O3-SiO2 (BS glass-ceramics were prepared by melt-quench technique, and the crystallization kinetics and phase transformation behavior were investigated in accordance with Kissinger and Johson-Mehl-Avrami equation, DSC, XRD and SEM. The results show that in the heat treatment process (or termed as re-crystallizing process Bi2SiO5 and Bi4Si3O12 crystals were found consequently. Respectively, the crystallization activation energies of the two crystals are Ep1=14.8kJ/mol and Ep2=34.1kJ/mol. And the average crystallization index of n1=1.73 and n2=1.38 suggested volume nucleation, one-dimensional growth and surface nucleation, one-dimensional growth from surface to the inside respectively. The meta-stable needle-like Bi2SiO5 crystals are easily to be transformed into stable prismatic Bi4Si3O12 crystals. By quenching the melt and hold in 850°C for 1h, the homogenous single Bi4Si3O12 crystals were found in the polycrystalline phase of the BS glassceramics system.

Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

International Nuclear Information System (INIS)

Nasir, Navida; Melnychenko-Koblyuk, Nataliya; Grytsiv, Andriy; Rogl, Peter; Giester, Gerald; Wosik, Jaroslaw; Nauer, Gerhard E.

2010-01-01

Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 deg. C) and Sr-Cu-Si (800 deg. C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi 3 (BaNiSn 3 -type) and SrNi 9-x Si 4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni x Si 1-x ) 2 (AlB 2 -type). The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi 5.5 Si 6.5 □ 1.0 . Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu 2-x Si 2+x (ThCr 2 Si 2 -type), Sr(Cu x Si 1-x ) 2 (AlB 2 -type), SrCu 9-x Si 4+x (0≤x≤1.0; CeNi 8.5 Si 4.5 -type) and SrCu 13-x Si x (4≤x≤1.8; NaZn 13 -type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems. Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba. - Graphical abstract: The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type and is related to CeNi 8.5 Si 4.5 -type.

Crystal growth and magnetic property of a new compound CeAu4Si2

International Nuclear Information System (INIS)

Nakashima, Hiroshi; Thamizhavel, Arumugam; Matsuda, Tatsuma D.; Haga, Yoshinori; Takeuchi, Tetsuya; Sugiyama, Kiyohiro; Settai, Rikio; Onuki, Yoshichika

2006-01-01

We have succeeded in growing a new ternary Ce compound CeAu 4 Si 2 . This compound crystallizes in the tetragonal crystal structure P4-bar m2 (-bar 1-bar 1-bar 5) with lattice parameters a=4.3304 -bar A and c=27.409 -bar A. The local environment around Ce atoms is similar to that of the well-known ThCr 2 Si 2 -type tetragonal structure in CeAu 2 Si 2 . Single crystals of CeAu 4 Si 2 were grown by the flux method using an Au 4.37 Si eutectic alloy as flux. Electrical resistivity, specific heat and magnetization measurements revealed a ferromagnetic ordering at T C =5.3 -bar K with a saturation moment of 1.7-bar μ B /Ce. Anisotropic features in the magnetic susceptibility and magnetization were well explained by a crystalline electric field (CEF) model. Estimated excitation energies from the ground state doublet to two excited doublets are 284 and 340-bar K, respectively

Defects Identification and Effects of Annealing on Lu2(1-xY2xSiO5 (LYSO Single Crystals for Scintillation Application

Directory of Open Access Journals (Sweden)

Samuel Blahuta

2011-07-01

Full Text Available The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL in Lu2(1-xY2xSiO5 (LYSO single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ, revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Ge-Si single crystal growth when the begining of an ingot prepared by a new method is used as the begining of the feeding alloy

International Nuclear Information System (INIS)

Tahirov, V.I.; Quliyev, A.F.; Hasanov, Z.Y.; Qahramanov, N.F.

2008-01-01

Ge-Si system is used to describe binary solid solution single crystal growth when the beginning of the ingot prepared by a new method is used as the beginning of the feeding alloy. At first the feeding ingot is prepared by Bridgman method, then it is exposed to the zone melting. Content distribution of the feeding alloy and the grown crystal is determined by solving the continuity equation. The crystals grown by this method can be used for construction of the vary-zone structures

Ni-Si oxide as an inducing crystallization source for making poly-Si

Energy Technology Data Exchange (ETDEWEB)

Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

2010-04-15

Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

N and Si Implantation Effect on Structural and Electrical Properties of Bridgman grown GaSe Single Crystal

International Nuclear Information System (INIS)

Karabulut, O.

2004-01-01

N and Si implantation to GaSe single crystals were carried out parallel to c-axis with ion beam of about 10 1 6 ions/cm 2 dose having energy values 30, 60 and 100 keV. Ion implantation modifications on Bridgman grown GaSe single crystals have been investigated by means of XRD, electrical conductivity, absorption and photoconductivity measurements. XRD measurements revealed that annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. It was observed that both N- and Siimplantation followed by annealing process decreased the resistivity values from 10 7 to 10 3 .-cm. The analysis of temperature dependent conductivity showed that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Absorption and spectral photoconductivity measurements showed that the band edge is shifted in the implanted sample. All these modifications were attributed to the structural modifications and continuous shallow trap levels introduced upon implantation and annealing

Singularities of 28Si electrical activation in a single crystal and epitaxial GaAs under radiation annealing

International Nuclear Information System (INIS)

Ardyshev, V.M.; Ardyshev, M.V.; Khludkov, S.S.

2000-01-01

Using the voltage-capacitance characteristics method, the concentration profiles of 28 Si that is implanted in monocrystal and epitaxial GaAs after fast thermal annealing (FTA) (825, 870, 950 deg C, 12 s) have been studied; using Van-der-Paw method, the electron Hall mobility temperature dependence in the range of 70-400 K has been measured. Unlike thermal annealing (800 deg C, 30 min), the silicon diffusion depth redistribution into GaAs is shown to occur for both types of material. The coefficient of diffusion of Si in the single crystal is 2 times greater, but the electrical activation efficiency is somewhat less than in the epitaxial GaAs for each of the temperatures of FTA. The analysis of the temperature dependence of the electron mobility in ion-implanted layers after FTA gives the evidence about the significantly lower concentration of defects restricting the mobility in comparison with results obtained at thermal annealing during 30 min [ru

Single-crystal X-ray diffraction study of Cs{sub 2}Er[Si{sub 6}O{sub 14}]F and Cs{sub 2}Er[Si{sub 4}O{sub 10}]F

Energy Technology Data Exchange (ETDEWEB)

Dabic, Predrag; Kremenovic, Aleksandar; Vulic, Predag [Belgrade Univ. (Serbia). Lab. of Crystallography; Kahlenberg, Volker; Schmidmair, Daniela [Innsbruck Univ. (Austria). Inst. of Mineralogy and Petrography

2016-07-01

Single-crystal growth experiments in the system CsF-Er{sub 2}O{sub 3}-SiO{sub 2} resulted in the simultaneous crystallization of two chemically related compounds within the same run: Cs{sub 2}Er[Si{sub 6}O{sub 14}]F (phase I) and Cs{sub 2}Er[Si{sub 4}O{sub 10}]F (phase II). They represent the first examples for cesium erbium silicates containing fluorine. Basic crystallographic data are - phase I: space group Cmca, a=17.2556(6) Aa, b=24.6565(7) Aa, c=14.4735(5) Aa, V=6157.9(3) Aa{sup 3}, Z=16; phase II: space group Pnma, a=22.3748(7) Aa, b=8.8390(2) Aa, c=11.9710(4) Aa, V=2367.5(1) Aa{sup 3}, Z=8. The structures were determined by direct methods and refined to residuals of R(vertical stroke F vertical stroke)=0.0229 for 2920 (phase I) and 0.0231 for 2314 (phase II) independent observed reflections with I>2σ(I). The structure of phase I represents a previously unknown structure type with a three dimensional tetrahedral framework consisting of Q{sup 3} and Q{sup 4} groups in the ratio 2:1. Basic building units of the network are unbranched sechser single-chains running parallel to [001]. The network can be conveniently built up from the condensation of tetrahedral layers parallel to (010) or (100), respectively. The crystal structure of phase II can be classified as a tubular or columnar chain silicate indicating that the backbones of the structure are multiple chains of silicate tetrahedra. This structure is isotypic to a Cs{sub 2}Y[Si{sub 4}O{sub 10}]F, a compound that has been characterized previously. Alternatively, both compounds can be described as mixed octahedral-tetrahedral frameworks, which can be classified according to their polyhedral microensembles. A topological analysis of both nets is presented.

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Influence of nano-size inclusions on spall fracture of copper single crystals

International Nuclear Information System (INIS)

Razorenov, S. V.; Ivanchihina, G. E.; Kanel, G. I.; Herrmann, B.; Zaretsky, E. B.

2007-01-01

Spall experiments have been carried out for copper in different structural states. The samples were copper single crystals, crystals of Cu+0.1% Si, copper crystals with silica particles of 180 nm average size, and polycrystalline copper. In experiments, the free surface velocity histories were recorded with the VISAR. The recovered samples were studied using optical microscopy and SEM. Solid solution Cu+0.1% Si demonstrates slower spall process than pure copper crystals. At longer pulse durations its spall strength is slightly less than that of pure crystals but approaches the latter with decreasing pulse duration. Fracture of copper with silica inclusions is completed much faster. The spall strength of this material is close to that of Cu+0.1% Si crystals at longer pulse duration and approaches the strength of polycrystalline copper with decreasing the load duration. Fractography of the spall surfaces correlates with the free surface velocity histories. The main fracture surface of the Cu+0.1% Si grains consists of net of dimples ∼4 μm to 40 μm mean diameter. The fracture surfaces of copper with silica inclusions is covered by a net of dimples of 1 μm to 5 μm size

Synthesis and Crystal Structure of a New Ruthenium Silicophosphate: RuP 3SiO 11

Science.gov (United States)

Fukuoka, Hiroshi; Imoto, Hideo; Saito, Taro

1996-01-01

A new ruthenium silicophosphate RuP3SiO11was obtained and the structure was determined by single-crystal X-ray diffraction. It crystallizes in the trigonal space groupR3cwitha= 8.253(3)Å,c= 39.317(4)Å,V= 2319(2)Å3,Z= 12,R= 0.029, andRW= 0.026. The structure is composed of RuO6, Si2O7, and P2O7units. The Si2O7unit shares the six oxygen atoms with six P2O7units, while the P2O7unit shares the six oxygen atoms with two Si2O7units and four RuO6octahedra. The anionic part forms an infinite three-dimensional network of silicophosphate. RuP3SiO11is isotypic with MoP3SiO11.

A multistep single-crystal-to-single-crystal bromodiacetylene dimerization

Science.gov (United States)

Hoheisel, Tobias N.; Schrettl, Stephen; Marty, Roman; Todorova, Tanya K.; Corminboeuf, Clémence; Sienkiewicz, Andrzej; Scopelliti, Rosario; Schweizer, W. Bernd; Frauenrath, Holger

2013-04-01

Packing constraints and precise placement of functional groups are the reason that organic molecules in the crystalline state often display unusual physical or chemical properties not observed in solution. Here we report a single-crystal-to-single-crystal dimerization of a bromodiacetylene that involves unusually large atom displacements as well as the cleavage and formation of several bonds. Density functional theory computations support a mechanism in which the dimerization is initiated by a [2 + 1] photocycloaddition favoured by the nature of carbon-carbon short contacts in the crystal structure. The reaction proceeded up to the theoretical degree of conversion without loss of crystallinity, and it was also performed on a preparative scale with good yield. Moreover, it represents the first synthetic pathway to (E)-1,2-dibromo-1,2-diethynylethenes, which could serve as synthetic intermediates for the preparation of molecular carbon scaffolds. Our findings both extend the scope of single-crystal-to-single-crystal reactions and highlight their potential as a synthetic tool for complex transformations.

Superconducting and charge density wave transition in single crystalline LaPt2Si2

Science.gov (United States)

Gupta, Ritu; Dhar, S. K.; Thamizhavel, A.; Rajeev, K. P.; Hossain, Z.

2017-06-01

We present results of our comprehensive studies on single crystalline LaPt2Si2. Pronounced anomaly in electrical resistivity and heat capacity confirms the bulk nature of superconductivity (SC) and charge density wave (CDW) transition in the single crystals. While the charge density wave transition temperature is lower, the superconducting transition temperature is higher in single crystal compared to the polycrystalline sample. This result confirms the competing nature of CDW and SC. Another important finding is the anomalous temperature dependence of upper critical field H C2(T). We also report the anisotropy in the transport and magnetic measurements of the single crystal.

Magnetic properties of single crystalline Mn{sub 4}Si{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Gottlieb, U.; Sulpice, A.; Lambert-Andron, B.; Laborde, O

2003-10-27

A single crystal of MnSi{sub 2-x} was obtained by a modified Czochralski pulling technique in a cold copper crucible. The quality and the nature of the sample were checked by an accurate crystal structure determination, which revealed the sample to be Mn{sub 4}Si{sub 7}. Resistivity and magnetic measurements were performed on this sample in the temperature range between 2 K and room temperature and in magnetic fields up to 7.5 T. Mn{sub 4}Si{sub 7} shows a metallic behaviour and the good crystal quality was revealed by the high residual resistance ratio of 360. For the magnetic susceptibility we observed a Curie-Weiss law above about 40 K with a low effective moment of p{sub eff}=0.365 {mu}{sub B}/Mn. Below this temperature, moments order in an anisotropic helical state, and in fields above 1 T, they align with a saturation moment of p{sub sat}=0.012 {mu}{sub B}/Mn. Mn{sub 4}Si{sub 7} is a weak itinerant magnetic system that could be a good candidate for the observation of the critical quantum fluctuations expected for marginal Fermi liquids.

The Tl{sub 2}S–PbS–SiS{sub 2} system and the crystal and electronic structure of quaternary chalcogenide Tl{sub 2}PbSiS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mozolyuk, M.Y.; Piskach, L.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, 79010, Lviv (Ukraine); Olekseyuk, I.D.; Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142, Kyiv (Ukraine)

2017-07-01

Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized in the evacuated silica ampoules by the melting and annealing technique. Phase equilibria in the system was investigated by XRD method. Isothermal section of the system was studied, and two intermediate quaternary phases were discovered to exist (Tl{sub 2}PbSiS{sub 4}, ∼Tl{sub 2}PbSi{sub 3}S{sub 8}). The quasi-binary section Tl{sub 2}SiS{sub 3}–PbS was investigated by DTA. Its phase diagram was constructed, and it was established that the equimolar compound melts incongruently at 818 K. The crystal structure of the quaternary compound Tl{sub 2}PbSiS{sub 4} was determined by X-ray powder diffraction. It crystallizes in the monoclinic space group P2{sub 1}/a with the unit-cell parameters a = 8.8141(4), b = 9.0150(5), c = 10.4383(5) Å, and β = 94.490(4)° (Tl{sub 2}PbGeS{sub 4} structure type). Reliability factors calculated in the isotropic approximation were found to be R{sub I} = 0.0564 and R{sub P} = 0.1070. The Tl{sub 2}PbSiS{sub 4} single crystal was tested with X-ray photoelectron spectroscopy. In particular, the XPS core-level and valence-band spectra were recorded for pristine and Ar{sup +}-ion bombarded surfaces of Tl{sub 2}PbSiS{sub 4}. The Tl{sub 2}PbSiS{sub 4} single crystal was found to be rather stable with respect to Ar{sup +}-ion irradiation. We have also measured the X-ray emission band depicting the energy distribution of mainly the S 3p states and compared it on a common energy scale with the XPS valence-band spectrum of the Tl{sub 2}PbSiS{sub 4} crystal. The above comparison indicates that the S 3p states contribute substantively in the upper portion of the valence band of Tl{sub 2}PbSiS{sub 4}, with their significant contributions in other portions of the valence-band region. - Highlights: • Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized. • Two intermediate quaternary phases were discovered to exist (Tl

Crystal field excitations of YbMn{sub 2}Si{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Mole, R.A. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW 2234 (Australia); School of Physical, Environmental and Mathematical Sciences, The University of New South Wales at the Australian Defence Force Academy, Canberra, ACT 2600 (Australia); Hofmann, M. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales at the Australian Defence Force Academy, Canberra, ACT 2600 (Australia); Forschungsneutronenquelle Heinz Maier-Leibnitz (FRM II), Technische Universität München, 85747 Garching (Germany); Adroja, D.T. [ISIS Facility, Science and Technology Facilities Council, Rutherford Appleton Laboratory, Didcot, OX11 OQX (United Kingdom); Moze, O. [Dipartimento di Fisica, Università degli Studi di Modena e Reggio Emilia, Modena (Italy); Campbell, S.J., E-mail: stewart.campbell@adfa.edu.au [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales at the Australian Defence Force Academy, Canberra, ACT 2600 (Australia)

2013-12-15

The crystal field excitations of the rare earth intermetallic compound YbMn{sub 2}Si{sub 2} have been measured by inelastic neutron scattering over the temperature range 2.5–50 K. The YbMn{sub 2}Si{sub 2} spectra exhibit three low energy excitations (∼3–7 meV) in the antiferromagnetic AFil region above the magnetic phase transition at T{sub N2} = 30(5) K. The crystal field parameters have been determined for YbMn{sub 2}Si{sub 2} in the antiferromagnetic AFil region. A further two inelastic excitations (∼9 meV, 17 meV) are observed below T{sub N2}=30(5) K, the temperature at which the high temperature antiferromagnetic structure is reported to exhibit doubling of the magnetic cell. Energy level diagrams have been determined for Yb{sup 3+} ions in the different sites above (single site) and below the magnetic transition temperature (two sites). The excitation energies for both sites are shown to be temperature independent with the temperature dependences of the transition intensities for the two sites described well by a simple Boltzmann model. The spectra below T{sub N2} cannot be described fully in terms of molecular field models based on either a single Yb{sup 3+} site or two Yb{sup 3+} sites. This indicates that the magnetic behaviour of YbMn{sub 2}Si{sub 2} is more complicated than previously considered. The inability to account fully for excitations below the magnetic phase transition may be due to an, as yet, unresolved structural transition associated with the magnetic transition. - Highlights: • The inelastic neutron scattering from YbMn{sub 2}Si{sub 2} has been investigated over the temperature range 2.5–50 K. • The crystal field splitting has been monitored through the magnetic transition at 30(5) K. • We have determined the crystal field parameters for the antiferromagnetic AFil region. • The transition intensities are described well by Boltzmann occupancy models. • The spectra below the magnetic transition have been analysed by

Large area crystallization of amorphous Si with overlapping high repetition rate laser pulses

KAUST Repository

Ryu, Sang-Gil

2012-09-01

This paper presents a pulsed laser crystallization technique, enabling large area crystallization of amorphous Si to produce grains having well-defined size and orientation. The method is developed by first determining the parameters influencing crystallization induced by single laser pulses of circular cross-sectional profile. In a second step, crystallization by overlapping round spots is examined. The experiments reveal three zones characterized by distinctly different crystallized morphologies following the laser irradiation. One of these zones corresponds to the regime of lateral crystal growth, wherein grains are driven towards the center of the spot by the radial temperature gradient. These findings are then applied to processing via line beam profiles that facilitate large area crystallization upon rapid translation of the specimen. Crystallization of extended areas hinges on the determination of the crystal growth length for a single spot. The pitch between successive pulses is then set on the basis of this information. It is shown that the pulse energy has only a weak effect on the crystal growth length. © 2012 Elsevier B.V.

Quantitative analysis of screw dislocations in 6H-SiC single crystals

International Nuclear Information System (INIS)

Dudley, M.; Si, W.; Wang, S.

1997-01-01

Screw dislocations along the [0001[ axis in 6H-SiC single crystals have been studied extensively by Synchrotron White-Beam X-ray Topography (SWBXT), Scanning Electron Microscopy (SEM), and Nomarski Optical Microscopy (NOM). Using SWBXT, the magnitude of the Burgers vector of screw dislocations has been determined by measuring the following four parameters: 1) the diameter of dislocation images in back-reflection topographs; 2) the width of bimodal dislocation images in transmission topographs; 3) the magnitude of the tilt of lattice planes on both sides of dislocation core in projection topographs; and 4) the magnitude of the tilt of lattice planes in section topographs. The four methods show good agreement. SEM results reveal that micropipes in the form of hollow tubes run through the crystal emerging as holes on the as-grown surface, with their diameters ranging from about 0.1 to a few micrometers. Correlation between topographic images and SEM micrographs shows that micropipes are screw dislocations with Burgers vector magnitudes from 2c to 7c (c is the lattice constant along the [0001[ axis). There is no empirical evidence that 1c dislocations have hollow cores. The Burgers vector magnitude of screw dislocations, b, and the diameter of associated micropipes, D, were fitted to Frank's prediction for hollow-core screw dislocations: D = μb 2 / 4π 2 γ, where μ is the shear modulus and γ is the specific surface energy. Statistical analysis of the relationship between D and b 2 shows that it is approximately linear, and the constant, γ / μ ranges from 1.1 x 10 -3 to 1.6 x 10 -3 nm

Crystallization in Y-Si-Al-O-N glasses

Energy Technology Data Exchange (ETDEWEB)

Leng-Ward, G; Lewis, M H

1985-05-01

The development of crystallization in oxynitride glasses has been characterized using transmission electron microscopy and scanning electron microscopy, X-ray (energy-dispersive) microanalysis, and powder X-ray diffraction techniques. A series of glasses was prepared while maintaining the ratio of yttrium-to-silicon-to-aluminium, but replacing oxygen with nitrogen up to the nitrogen solubility limit. On annealing at 1250 C, the oxide glass fully crystallized into yttrium disilicate (Y2Si2O7). Al2O3 and mullite (Al6Si2O13) while, with increasing nitrogen content, the disilicate phase was progressively replaced by yttrium aluminium garnet (Y3Al5O12) and nitrogen was mainly incorporated into Si2N2O. Annealing of the nitrogen glasses at 1100 C produced partial crystallization involving an intermediate phase related to nitrogen-wollastonite. Phase separation in an as-quenched SiO2-rich Y-Si-Al-O composition glass is illustrated. 9 references.

Ion beam synthesis of buried single crystal erbium silicide

International Nuclear Information System (INIS)

Golanski, A.; Feenstra, R.; Galloway, M.D.; Park, J.L.; Pennycook, S.J.; Harmon, H.E.; White, C.W.

1990-01-01

High doses (10 16 --10 17 /cm 2 ) of 170 keV Er + were implanted into single-crystal left-angle 111 right-angle Si at implantation temperatures between 350 degree C and 520 degree C. Annealing at 800 degree C in vacuum following the implant, the growth and coalescence of ErSi 2 precipitates leads to a buried single crystalline ErSi 2 layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520 degree C using an Er dose of 7 x 10 16 /cm 2 and thermally annealed were subsequently used as seeds for the mesoepitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi 2 layer strongly depends on the temperature during the second implantation. 12 refs., 4 figs

Growth of binary solid solution single crystals and calculation of melt surface displacement velocity

International Nuclear Information System (INIS)

Agamaliyev, Z.A.; Tahirov, V.I.; Hasanov, Z.Y.; Quliyev, A.F.

2007-01-01

A binary solid solution single crystal growth method has been worked out. Cylinder feeding alloy with complex content distribution and truncated cone crucible are used. Second component distribution coefficient is more than unit. Content distribution along grown crystal is found by solving continuity equation. After reaching dynamic equilibrium state second component concentration in grown crystal is saturated the value of which is less than the average ona in the feeding alloy. Using the method Ge-Si perfect single crystals has been grown. Calculation method of melt surface displacement velocity has been offered as well

Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

International Nuclear Information System (INIS)

Qi, Q.; Zhang, W.Z.; Shi, L.Q.; Zhang, W.Y.; Zhang, W.; Zhang, B.

2012-01-01

Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated. - Highlights: ► Single-crystal films of TiC (111) have been synthesized by RF magnetron sputtering. ► Both temperature and bias affect greatly the TiC crystal structure. ► Al 2 O 3 substrate is much better than Si substrate for TiC epitaxial growth. ► TiC (111) epitaxial film can be grown on Al 2 O 3 (0001) at room temperature.

Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

International Nuclear Information System (INIS)

Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

2008-01-01

The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

Multiband superconductivity in heavy fermion compound CePt3Si without inversion symmetry. An NMR study on a high-quality single crystal

International Nuclear Information System (INIS)

Mukuda, Hidekazu; Nishide, Sachihiro; Harada, Atsushi

2009-01-01

We report on novel superconducting characteristics of the heavy fermion (HF) superconductor CePt 3 Si without inversion symmetry through 195 Pt-NMR study on a single crystal with T c =0.46 K that is lower than T c - 0.75 K for polycrystals. We show that the intrinsic superconducting characteristics inherent to CePt 3 Si can be understood in terms of the unconventional strong-coupling state with a line-node gap below T c =0.46 K. The mystery about the sample dependence of T c is explained by the fact that more or less polycrystals and single crystals inevitably contain some disordered domains, which exhibit a conventional BCS s-wave superconductivity (SC) below 0.8 K. In contrast, the Neel temperature T N - 2.2 K is present regardless of the quality of samples, revealing that the Fermi surface responsible for SC differ from that for the antiferromagnetic order. These unusual characteristics of CePt 3 Si can be also described by a multiband model; in the homogeneous domains, the coherent HF bands are responsible for the unconventional SC, whereas in the disordered domains the conduction bands existing commonly in LaPt 3 Si may be responsible for the conventional s-wave SC. We remark that some impurity scatterings in the disordered domains break up the 4f-electrons-derived coherent bands but not others. In this context, the small peak in 1/T 1 just below T c reported before [Yogi et al. (2004)] is not due to a two-component order parameter composed of spin-singlet and spin-triplet Cooper pairing states, but due to the contamination of the disorder domains which are in the s-wave SC state. (author)

Polarized spectroscopic properties of Er{sup 3+}:Gd{sub 2}SiO{sub 5} crystal and evaluation of Er{sup 3+}:Yb{sup 3+}:Gd{sub 2}SiO{sub 5} crystal as a 1.55 μm laser medium

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang, Y.D., E-mail: huyd@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2016-10-01

An Er{sup 3+}-doped Gd{sub 2}SiO{sub 5} single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er{sup 3+}–Yb{sup 3+} co-doped Gd{sub 2}SiO{sub 5} crystal was evaluated.

Synthesis, Crystal and Electronic Structure of the Quaternary Magnetic EuTAl4Si2 (T = Rh and Ir) Compounds

Energy Technology Data Exchange (ETDEWEB)

Maurya, Arvind [Tata Institute of Fundamental Research; Thamizhavel, Arumugam [Tata Institute of Fundamental Research; Provino, Alessia [University of Genova; Pani, Marcella [University of Genova; Manfrinetti, Pietro [University of Genova; Paudyal, Durga [Ames Laboratory; Dhar, Sudesh Kumar [Tata Institute of Fundamental Research

2014-01-22

Single crystals of the quaternary europium compounds EuRhAl4Si2 and EuIrAl4Si2 were synthesized by using the Al–Si binary eutectic as a flux. The structure of the two quaternary compounds has been refined by single crystal X-ray diffraction. Both compounds are stoichiometric and adopt an ordered derivative of the ternary KCu4S3 structure type (tetragonal tP8, P4/mmm). The two compounds reported here represent the first example of a quaternary and truly stoichiometric 1:1:4:2 phase crystallizing with this structure type. In light of our present results, the structure of the BaMg4Si3 compound given in literature as representing a new prototype is actually isotypic with the KCu4S3 structure. Local spin density approximation including the Hubbard U parameter (LSDA + U) calculations show that Eu ions are in the divalent state, with a significant hybridization between the Eu 5d, Rh (Ir) 4d (5d), Si 3p and Al 3p states. Magnetic susceptibility measured along the [001] direction confirms the divalent nature of the Eu ions in EuRhAl4Si2 and EuIrAl4Si2, which order magnetically near 11 and 15 K, respectively.

Crystal growth and dislocation etch pits observation of chalcopyrite CdSiP2

Science.gov (United States)

He, Zhiyu; Zhao, Beijun; Zhu, Shifu; Chen, Baojun; Huang, Wei; Lin, Li; Feng, Bo

2018-01-01

CdSiP2 is the only crystal that can offer Non-critical Phase Matching (NCPM) for a 1064 nm pumped optical parametric oscillation (OPO) with idler output in the 6 μm range. In this paper, a large, crack-free CdSiP2 single crystal measuring 18 mm in diameter and 65 mm in length was successfully grown by the Vertical Bridgman method (MVB) with an explosion-proof quartz ampoule. The results of lattice parameters, element composition and IR transmittance of the as-grown crystal characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDS) and Fourier transformation infrared spectrometer (FTIR) showed the as grown crystal crystallized well and the absorption coefficients at 4878 cm-1 and 2500 cm-1 were 0.14 cm-1 and 0.06 cm-1. Moreover, a new etchant composed of Br2, HCl, HNO3, CH3OH and H2O (1:800:800:400:400 in volume ratio) was prepared and the dislocation etch pits on oriented faces of as-grown CdSiP2 crystal were observed for the first time. It is found the etch pits are in rectangular structure on the (1 0 1) face, but in trigonal pyramid structure on (3 1 2) face. According to the quantities of the etch pits, the average densities of dislocation were evaluated to be 2.28 × 105/cm2 and 1.4 × 105/cm2, respectively.

A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

Science.gov (United States)

Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki

2012-05-01

In 1982, Voronkov presented a model describing point defect behavior during the growth of single crystal Si from a melt and derived an expression to predict if the crystal was vacancy- or self-interstitial-rich. Recently, Vanhellemont claimed that one should take into account the impact of compressive stress introduced by the thermal gradient at the melt/solid interface by considering the hydrostatic pressure dependence of the formation enthalpy of the intrinsic point defects. To evaluate the impact of thermal stress more correctly, the pressure dependence of both the formation enthalpy (Hf) and the migration enthalpy (Hm) of the intrinsic point defects should be taken into account. Furthermore, growing single crystal Si is not under hydrostatic pressure but almost free of external pressure (generally in Ar gas under reduced pressure). In the present paper, the dependence of Hf and Hm on the pressure P, or in other words, the pressure dependence of the formation energy (Ef) and the relaxation volume (vf), is quantified by density functional theory calculations. Although a large number of ab initio calculations of the properties of intrinsic point defects have been published during the last years, calculations for Si crystals under pressure are rather scarce. For vacancies V, the reported pressure dependences of HfV are inconsistent. In the present study, by using 216-atom supercells with a sufficient cut-off energy and mesh of k-points, the neutral I and V are found to have nearly constant formation energies EfI and EfV for pressures up to 1 GPa. For the relaxation volume, vfI is almost constant while vfV decreases linearly with increasing pressure P. In case of the hydrostatic pressure Ph, the calculated formation enthalpy HfI and migration enthalpy HmI at the [110] dumbbell site are given by HfI = 3.425 - 0.057 × Ph (eV) and HmI = 0.981 - 0.039 × Ph (eV), respectively, with Ph given in GPa. The calculated HfV and HmV dependencies on Ph given by HfV = 3.543 - 0

Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Directory of Open Access Journals (Sweden)

Ziwei Wang

2016-06-01

Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

Science.gov (United States)

Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

2017-12-01

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

Magnetization of correlated electron systems. MnSi thin films, CrB2 single crystals and two-dimensional electron systems in MgZnO/ZnO

International Nuclear Information System (INIS)

Brasse, Matthias

2014-01-01

Torque magnetometry at low temperature is performed to investigate the magnetic properties of MnSi thin films, of a CrB 2 single crystal and of a two-dimensional electron system (2DESs) formed at the interface of MgZnO/ZnO. The magnetic anisotropy and phase diagram of MnSi as well as information on the electronic structure of CrB 2 are obtained. The MgZnO/ZnO 2DESs exhibits the de Haas-van Alphen effect and non-equilibrium currents which are analyzed in order to determine ground state properties and excited states, respectively.

The accuracy of the crystal chemical parameters at high-pressure conditions from single-crystal X-ray diffraction in diamond-anvil cell

DEFF Research Database (Denmark)

Periotto, Benedetta

-ray instruments. At the same time, the high-pressure experiments have benefited by the strong improvements on the high-pressure devices, in particular the diamond-anvil cell (DAC). The aim of this research project is to assess the quality of the data obtained by means of the single-crystal X-ray diffraction...... technique through the study of different mineral phases. The procedure for setting up an experiment under high-pressure conditions, using a single crystal as sample held within a DAC, are presented here with all the details of the in situ measurements at high-pressure conditions. The research project...... started with a comparison between two different DACs, in order to define the capabilities of one of the most common types of pressure device, the ETH-type DAC. Application examples of data quality analysis have been conducted on pyroxenes (NaInSi2O6, orthoenstatite MgSiO3 and LiCrSi2O6), which...

Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

2008-01-01

Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

Growth and characterization of the La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} piezoelectric single crystal

Energy Technology Data Exchange (ETDEWEB)

Dou, Renqin [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Ding, Shoujun; Sun, Dunlu [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); Zhang, Qi [Anhui Firesky Crystal Science and Technology Co. Ltd, Tongling (China); Shi, Zibin [26th Institute of China Electronics Technology Group Corporation, Chongqing (China); Wang, Jiyang [Shandong University, State Key Laboratory of Crystal Materials, Jinan (China)

2017-01-15

A new piezoelectric single crystal La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k{sub eff} of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm{sup -3} by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H{sub 2}SO{sub 4} etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ε {sub 11}, ε {sub 33}, d{sub 11}, and d{sub 14} are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense. (orig.)

New multicell model for describing the atomic structure of La{sub 3}Ga{sub 5}SiO{sub 14} piezoelectric crystal: Unit cells of different compositions in the same single crystal

Energy Technology Data Exchange (ETDEWEB)

Dudka, A. P., E-mail: dudka@ns.crys.ras.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)

2017-03-15

Accurate X-ray diffraction study of langasite (La{sub 3}Ga{sub 5}SiO{sub 14}) single crystal has been performed using the data obtained on a diffractometer equipped with a CCD area detector at 295 and 90.5 K. Within the known La{sub 3}Ga{sub 5}SiO{sub 14} model, Ga and Si cations jointly occupy the 2d site. A new model of a “multicell” consisting of two different unit cells is proposed. Gallium atoms occupy the 2d site in one of these cells, and silicon atoms occupy this site in the other cell; all other atoms correspondingly coordinate these cations. This structure implements various physical properties exhibited by langasite family crystals. The conclusions are based on processing four data sets obtained with a high resolution (sin θ/λ ≤ 1.35 Å{sup –1}), the results reproduced in repeated experiments, and the high relative precision of the study (sp. gr. P321, Z = 1; at 295 K, a = 8.1652(6) Å, c = 5.0958(5) Å, R/wR = 0.68/0.68%, 3927 independent reflections; at 90.5 K, a = 8.1559(4) Å, c = 5.0913(6) Å, R/wR = 0.92/0.93%, 3928 reflections).

Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

Science.gov (United States)

Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

2017-06-01

The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

NARCIS (Netherlands)

Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

1986-01-01

Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

Spin-reorientation and anisotropy of the magnetization in single crystalline Ho2Co15Si2

International Nuclear Information System (INIS)

Tegus, O.

2000-01-01

We have studied the magnetic properties of a Ho 2 Co 15 Si 2 single crystal. The easy magnetization direction is parallel to the c-axis in an extended temperature region below the Curie temperature. A spin-reorientation transition takes place at 323 K, leading to an easy magnetization direction perpendicular to the c-axis below this temperature. We have compared the present results with those obtained previously on various R 2 Co 17 single crystals and found that Si substitution not only leads to a sign reversal in the Co sublattice anisotropy but also leads to a substantial anisotropy of the saturation magnetization. Sign and magnitude of the magnetization anisotropy are conserved during the spin-reorientation transition. (orig.)

Modeling and simulation of Si crystal growth from melt

Energy Technology Data Exchange (ETDEWEB)

Liu, Lijun; Liu, Xin; Li, Zaoyang [National Engineering Research Center for Fluid Machinery and Compressors, School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Miyazawa, Hiroaki; Nakano, Satoshi; Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)

2009-07-01

A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three-dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate requirement of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Crystal structure of the Hg4SiS6 and Hg4SiSe6 compounds

International Nuclear Information System (INIS)

Gulay, L.D.; Olekseyuk, I.D.; Parasyuk, O.V.

2002-01-01

The crystal structures of Hg 4 SiS 6 and Hg 4 SiSe 6 compounds were investigated using X-ray powder diffraction. These compounds crystallize in the monoclinic Cc space group with the lattice parameters a=1.23020(5), b=0.71031(4), c=1.22791(4) nm, β=109.721(3) deg. for Hg 4 SiS 6 and a=1.28110(4), b=0.74034(4), c=1.27471(1) nm, β=109.605(3) deg. for Hg 4 SiSe 6 . Atomic parameters were refined in the isotropic approximation (R I =0.0571 and R I =0.0555 for the Hg 4 SiS 6 and Hg 4 SiSe 6 , respectively)

single crystals

Indian Academy of Sciences (India)

2018-05-18

May 18, 2018 ... Abstract. 4-Nitrobenzoic acid (4-NBA) single crystals were studied for their linear and nonlinear optical ... studies on the proper growth, linear and nonlinear optical ..... between the optic axes and optic sign of the biaxial crystal.

Domain wall motion and magnetization reversal processes in a FeSi picture frame single crystal studied by the time-dependent neutron depolarization technique

International Nuclear Information System (INIS)

Schaik, F.J. van.

1979-01-01

The three dimensional neutron depolarization technique, which gives detailed information about the static properties of ferromagnetic materials, has been extended to a method by means of which the time dependence of magnetic phenomena can be studied. The measurement of the neutron depolarization against time is made possible by applying a periodical magnetic field on the investigated specimen and by continuous sampling of the transmitted neutron intensity in time channels, which are started synchronously with the applied field. The technique has been used in the study of the magnetic domain structure at room temperature of a (010) [001] picture frame FeSi single crystal (3.5 wt.% Si) with outer dimensions of (15 x 10 x 0.26) mm and a frame width of 2.78 mm. (Auth.)

SiPM based readout system for PbWO4 crystals

Science.gov (United States)

Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

2013-08-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20-100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

SiPM based readout system for PbWO4 crystals

International Nuclear Information System (INIS)

Berra, A.; Bolognini, D.; Bonfanti, S.; Bonvicini, V.; Lietti, D.; Penzo, A.; Prest, M.; Stoppani, L.; Vallazza, E.

2013-01-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20–100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs

Magnetic SiO2/Fe3O4 colloidal crystals

International Nuclear Information System (INIS)

Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

2008-01-01

We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

Results on the Coherent Interaction of High Energy Electrons and Photons in Oriented Single Crystals

CERN Document Server

Apyan, A.; Badelek, B.; Ballestrero, S.; Biino, C.; Birol, I.; Cenci, P.; Connell, S.H.; Eichblatt, S.; Fonseca, T.; Freund, A.; Gorini, B.; Groess, R.; Ispirian, K.; Ketel, T.J.; Kononets, Yu.V.; Lopez, A.; Mangiarotti, A.; van Rens, B.; Sellschop, J.P.F.; Shieh, M.; Sona, P.; Strakhovenko, V.; Uggerhoj, E.; Uggerhj, Ulrik Ingerslev; Unel, G.; Velasco, M.; Vilakazi, Z.Z.; Wessely, O.; Kononets, Yu.V.

2005-01-01

The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence ...

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Directory of Open Access Journals (Sweden)

Kaoru Toko

2015-01-01

Full Text Available Producing large-grained polycrystalline Si (poly-Si film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C Al-induced crystallization (AIC. The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100 was preferred for Al-doped-ZnO (AZO and indium-tin-oxide (ITO; (111 was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

International Nuclear Information System (INIS)

Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

2015-01-01

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi 2 phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi 2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni 3 Si 2 . Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization

Crystal growth velocity in deeply undercooled Ni-Si alloys

Science.gov (United States)

Lü, Y. J.

2012-02-01

The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

Design of a crystalline undulator based on patterning by tensile Si3N4 strips on a Si crystal

International Nuclear Information System (INIS)

Guidi, V.; Lanzoni, L.; Mazzolari, A.; Martinelli, G.; Tralli, A.

2007-01-01

A crystalline undulator consists of a crystal with a periodic deformation in which channeled particles undergo oscillations and emit coherent undulator radiation. Patterning by an alternate series of tensile Si 3 N 4 strips on a Si crystal is shown to be a tractable method to construct a crystalline undulator. The method allows periodic deformation of the crystal with the parameters suitable for implementation of a crystalline undulator. The resulting periodic deformation is present in the bulk of the Si crystal with an essentially uniform amplitude, making the entire volume of the crystal available for channeling and in turn for emission of undulator radiation

Current developments in CZ Si crystal growing technology; Aktuelle Entwicklungen in der Zuechtungstechnologie von CZ-Si-Kristallen

Energy Technology Data Exchange (ETDEWEB)

Altekrueger, Burkhard; Volk, Michael [PVA TePla AG, Wettenberg (Germany)

2011-02-15

The industrial growing of increasingly large and perfect silicon (Si) monocrystals for applications in microelectronics and photovoltaics requires continuous improvement of process control and growing technology. Continuous adaptation and optimization of system technology in terms of reliability, process flexibility and dimensioning are also necessary. The basic principles of industrial silicon crystal growing and the resultant requirements for the Si process and system technologies are described in the first part of this series of articles. The constantly increasing requirements for the performance and complexity of the electronic circuits (chips) in accordance with Moore's Law mean that the requirements for the perfection and dimensions of monocrystalline Si wafers and Si crystals are also continuously rising. After the introduction of the 300 mm Si wafer generation in recent years, the next Si wafer generation (450 mm) is therefore being discussed already. The technological and economic effects of these constantly increasing requirements for the necessary system technologies will be set out and discussed in the subsequent articles on the basis of current Si CZ crystal growing systems as well as new system concepts. (orig.)

Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

Energy Technology Data Exchange (ETDEWEB)

Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

2014-11-17

We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

Thermal shock cracking of GSO single crystal

International Nuclear Information System (INIS)

Miyazaki, Noriyuki; Yamamoto, Kazunari; Tamura, Takaharu; Kurashige, Kazuhisa; Ishibashi, Hiroyuki; Susa, Kenzo

1998-01-01

The quantitative estimation of the failure stress of a gadolinium orthosilicate (Gd 2 SiO 5 , hereafter abbreviated as GSO) single crystal due to thermal shock was investigated. A cylindrical test specimen was heated in a silicone oil bath, then subjected to thermal shock by pouring room temperature silicone oil. Cracking occurred during cooling. The heat conduction analysis was performed to obtain temperature distribution in a GSO single crystal at cracking, using the surface temperatures measured in the thermal shock cracking test. Then the thermal stress was calculated using temperature profile of the test specimen obtained from the heat conduction analysis. It is found from the results of the thermal stress analysis and the observation of the cracking in test specimens that the thermal shock cracking occurs in a cleavage plane due to the stress normal to the plane. Three-point bending tests were also performed to examine the relationship between the critical stress for thermal shock cracking and the three-point bending strength obtained from small-sized test specimens. (author)

Comparative studies on the pest reactions of single- and poly- crystalline MoSi2

International Nuclear Information System (INIS)

Chou, T.C.; Nieh, T.G.

1992-01-01

Molybdenum disilicide (MoSi 2 ) has many attractive properties, e.g., high melting point (2020 degrees C), relatively low density (6.28 g/cm 3 ), good thermal stability and thermal shock resistance, and excellent oxidation resistance, for potential high temperature applications. Specifically, it is oxidation resistant at temperatures up to about 1900 degrees C, resulting from the formation of a self-healing, glassy silica (SiO 2 ) surface layer. Because of its suitability for use as a high temperature coating and as heating elements, the oxidation properties of MoSi 2 have been extensively studied in the past 30 years, but mainly in the high temperature regimes. In this paper, the authors investigate the evolution and morphological characteristics of the oxidation products of both MoSi 2 single crystals and cast polycrystals. Special attention is given to addressing the nucleation of pest in single crystalline material. The results from both the single- and poly-crystalline samples are correlated with an effort to resolve the origin of MoSi 2 pest. Their implications to the early-stage formation (nucleation) of pest are discussed

Giant crystal-electric-field effect and complex magnetic behavior in single-crystalline CeRh3Si2

Science.gov (United States)

Pikul, A. P.; Kaczorowski, D.; Gajek, Z.; Stȩpień-Damm, J.; Ślebarski, A.; Werwiński, M.; Szajek, A.

2010-05-01

Single-crystalline CeRh3Si2 was investigated by means of x-ray diffraction, magnetic susceptibility, magnetization, electrical resistivity, and specific-heat measurements carried out in wide temperature and magnetic field ranges. Moreover, the electronic structure of the compound was studied at room temperature by cerium core-level x-ray photoemission spectroscopy (XPS). The physical properties were analyzed in terms of crystalline electric field and compared with results of ab initio band-structure calculations performed within the density-functional theory approach. The compound was found to crystallize in the orthorhombic unit cell of the ErRh3Si2 type (space group Imma No.74, Pearson symbol: oI24 ) with the lattice parameters a=7.1330(14)Å , b=9.7340(19)Å , and c=5.6040(11)Å . Analysis of the magnetic and XPS data revealed the presence of well-localized magnetic moments of trivalent cerium ions. All the physical properties were found to be highly anisotropic over the whole temperature range studied and influenced by exceptionally strong crystalline electric field with the overall splitting of the 4f1 ground multiplet exceeding 5700 K. Antiferromagnetic order of the cerium magnetic moments at TN=4.70(1)K and their subsequent spin rearrangement at Tt=4.48(1)K manifest themselves as distinct anomalies in the temperature characteristic of all the physical properties investigated and exhibit complex evolution in an external magnetic field. A tentative magnetic B-T phase diagram, constructed for B parallel to the b axis being the easy magnetization direction, shows very complex magnetic behavior of CeRh3Si2 , similar to that recently reported for an isostructural compound CeIr3Si2 . The electronic band-structure calculations corroborated the antiferromagnetic ordering of the cerium magnetic moments and well-reproduced the experimental XPS valence-band spectrum.

Ball-milling-induced crystallization and ball-milling effect on thermal crystallization kinetics in an amorphous FeMoSiB alloy

International Nuclear Information System (INIS)

Guo, F.Q.; Lu, K.

1997-01-01

Microstructure evolution in a melt-spun amorphous Fe 77.2 Mo 0.8 Si 9 B 13 alloy subjected to high-energy ball milling was investigated by means of X-ray diffraction (XRD), a transmission electron microscope (TEM), and a differential scanning calorimeter (DSC). It was found that during ball milling, crystallization occurs in the amorphous ribbon sample with precipitation of an α-Fe solid solution, and the amorphous sample crystallizes completely into a single α-Fe nanostructure (rather than α-Fe and borides as in the usual thermal crystallization products) when the milling time exceeds 135 hours. The volume fraction of material crystallized was found to be approximately proportional to the milling time. The fully crystallized sample with a single α-Fe nanophase exhibits an intrinsic thermal stability against phase separation upon annealing at high temperatures. The ball-milling effect on the subsequent thermal crystallization of the amorphous phase in an as-milled sample was studied by comparison of the crystallization products and kinetic parameters between the as-quenched amorphous sample and the as-milled sample was studied by comparison of the crystallization products and kinetic parameters between the as-quenched amorphous sample and the as-milled partially crystallized samples. The crystallization temperatures and activation energies for the crystallization processes of the residual amorphous phase were considerably decreased due to ball milling, indicating that ball milling has a significant effect on the depression of thermal stability of the residual amorphous phase

Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

Science.gov (United States)

Pramann, Axel; Rienitz, Olaf

2016-06-07

A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers.

Science.gov (United States)

Wang, Yu; Yu, Kai; Qi, H Jerry; Xiao, Jianliang

2017-10-25

Shape memory polymers (SMPs) can remember two or more distinct shapes, and thus can have a lot of potential applications. This paper presents combined experimental and theoretical studies on the wrinkling of single-crystal Si ribbons on SMPs and the temperature dependent evolution. Using the shape memory effect of heat responsive SMPs, this study provides a method to build wavy forms of single-crystal silicon thin films on top of SMP substrates. Silicon ribbons obtained from a Si-on-insulator (SOI) wafer are released and transferred onto the surface of programmed SMPs. Then such bilayer systems are recovered at different temperatures, yielding well-defined, wavy profiles of Si ribbons. The wavy profiles are shown to evolve with time, and the evolution behavior strongly depends on the recovery temperature. At relatively low recovery temperatures, both wrinkle wavelength and amplitude increase with time as evolution progresses. Finite element analysis (FEA) accounting for the thermomechanical behavior of SMPs is conducted to study the wrinkling of Si ribbons on SMPs, which shows good agreement with experiment. Merging of wrinkles is observed in FEA, which could explain the increase of wrinkle wavelength observed in the experiment. This study can have important implications for smart stretchable electronics, wrinkling mechanics, stimuli-responsive surface engineering, and advanced manufacturing.

Residual stress and mechanical properties of SiC ceramic by heat treatment

International Nuclear Information System (INIS)

Yoon, H.K.; Kim, D.H.; Shin, B.C.

2007-01-01

Full text of publication follows: Silicon carbide is a compound of relatively low density, high hardness, elevated thermal stability and good thermal conductivity, resulting in good thermal shock resistance. Because of these properties, SiC materials are widely used as abrasives and refractories. In this study, SiC single and poly crystals was grown by the sublimation method using the SiC seed crystal and SiC powder as the source material. Mechanical properties of SiC single and poly crystals are carried out by using the nano-indentation method and small punch test after the heat treatment. As a result, mechanical properties of SiC poly crystal had over double than single. And SiC single and poly crystals were occurred residual stress, but residual stress was shown relaxant properties by the effect of heat treatment. (authors)

Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

Science.gov (United States)

da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

2015-06-25

Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

Plastic deformation of single crystals of WSi2 with the C11b structure

International Nuclear Information System (INIS)

Ito, K.; Yano, T.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

1999-01-01

The deformation behavior of single crystals of WSi 2 has been investigated as a function of crystal orientation in the temperature range from room temperature to 1500 C in compression. Single crystals of WSi 2 can be deformed only at high temperatures above 1100 C, in contrast to MoSi 2 in which plastic flow is possible even at room temperature. Four slip systems, {110} left-angle 111 right-angle, {011} left-angle 100 right-angle, {023} left-angle 100 right-angle and (001)left-angle 100 right-angle, are identified. While the former three slip systems are operative also in MoSi 2 , the (001)left-angle 100 right-angle slip is only operative in WSi 2 . The (001)left-angle 100 right-angle slip in WSi 2 is the alternative to {013} left-angle 331 right-angle slip in MoSi 2 since they are operative in the same orientation range. Slip on {110} left-angle 331 right-angle is hardly observed in WSi 2 . The values of critical resolved shear stress (CRSS) for the commonly observed slip systems are much higher in WSi 2 than in MoSi 2 with the largest difference for {110} left-angle 111 right-angle slip. The higher CRSS values in WSi 2 are not only due to the intrinsic difference in the deformation behavior but also due to the existence of numerous grown-in stacking faults on (001)

Crystallization behavior and controlling mechanism of iron-containing Si-C-N ceramics.

Science.gov (United States)

Francis, Adel; Ionescu, Emanuel; Fasel, Claudia; Riedel, Ralf

2009-11-02

The crystallization behavior and controlling mechanism of the Si-Fe-C-N system based on polymer-derived SiCN ceramic filled with iron metal powder has been studied. The composite preparation conditions allow the formation of a random distribution of metallic particles in the polymer matrix volume for the Si-C-N system. Pyrolysis of the composite material at 1100 degrees C indicates the presence of one crystalline phase Fe(3)Si. While the sample pyrolyzed at 1200 degrees C reveals the formation of both Fe(3)Si and Fe(5)Si(3) phases, a crystallization of beta-SiC is additionally observed by increasing the temperature up to 1300 degrees C. The propensity for the formation of SiC is due to the presence of Fe(5)Si(3), where a solid-liquid-solid (SLS) growth mechanism was suggested to occur. X-ray diffraction (XRD), scanning electron microscopy (SEM), differential thermal analysis (DTA), and thermal gravimetric analysis with mass spectroscopic detection (TGA-MS) were employed to investigate the crystallization behavior of the Si-Fe-C-N system.

Anomalous effect of high-frequency ultrasound on radiation diffraction in deformed single crystals

International Nuclear Information System (INIS)

Iolin, E.M.; Rajtman, Eh.A.; Kuvaldin, B.V.; Zolotoyabko, Eh.V.

1988-01-01

Results are presented of a theoretical and experimental study of neutron and X-ray diffraction in defromed single crystals on high-frequency ultrasonic excitation. It is demonstrated theoretically that at a frequency exceeding a certain threshold value the ultrasound violates the adiabatic conditions for the excitation point motion on the dispersion surface branches. This leads to an anomalous (compared to diffraction for a perfect crystal) dependence of the diffraction intensity on the ultrasonic wave amplitude. The experimental data for Si crystals are in good agreement with the theoretical predictions

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Energy Technology Data Exchange (ETDEWEB)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

Science.gov (United States)

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Principles of crystallization, and methods of single crystal growth

International Nuclear Information System (INIS)

Chacra, T.

2010-01-01

Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)

SiPM based readout system for PbWO{sub 4} crystals

Energy Technology Data Exchange (ETDEWEB)

Berra, A., E-mail: alessandro.berra@gmail.com [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Bolognini, D.; Bonfanti, S. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Lietti, D. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Penzo, A. [INFN sezione di Trieste (Italy); Prest, M.; Stoppani, L. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11-22100 Como (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

2013-08-01

Silicon PhotoMultipliers (SiPMs) consist of a matrix of small passively quenched silicon avalanche photodiodes operated in limited Geiger-mode (GM-APDs) and read out in parallel from a common output node. Each pixel (with a typical size in the 20–100 μm range) gives the same current response when hit by a photon; the SiPM output signal is the sum of the signals of all the pixels, which depends on the light intensity. The main advantages of SiPMs with respect to photomultiplier tubes (PMTs) are essentially the small dimensions, the insensitivity to magnetic fields and a low bias voltage. This contribution presents the performance of a SiPM based readout system for crystal calorimeters developed in the framework of the FACTOR/TWICE collaboration. The SiPM used for the test is a new device produced by FBK-irst which consists in a matrix of four sensors embedded in the same silicon substrate, called QUAD. The SiPM has been coupled to a lead tungstate crystal, an early-prototype version of the crystals developed for the electromagnetic calorimeter of the CMS experiment. New tests are foreseen using a complete module consisting of nine crystals, each one readout by two QUADs.

Monte-Carlo-calculations for the simulation of channelling-experiments with V3Si-single-crystals

International Nuclear Information System (INIS)

Kaufmann, R.

1978-05-01

The results of channelling-investigations on single-crystals of A15-type structure, like e.g. V 3 Si, are not directly comparable to analytical model-calculations. Therefore the channelling-process was simulated in a Monte-Carlo-program on the basis of the binary-collision-model. The calculated values for the minimum yield, Chisub(min), and the critical angle, Psisub(1/2), were in good agreement with the results of experiments with 2 MeV- 4 He + -particles. The lattice damage in the range of 2,000 Angstroem at the surface after an irradiation with a fluence of 6 x 10 16 - 4 He + /cm 2 at 300 KeV could be explained by normally distributed static displacements of the V-atoms with a mean value of 0.05 A. The transverse damage structure after an irradiation with a fluence of 1.5 x 10 16 - 4 He + /cm 2 at 50 KeV could be simulated by a step profile of 50% displacements of the V-atoms with a maximum value of 0.5 Angstroem at the depth of the projected range. (orig./HPOE) [de

Anelastic relaxation peaks in single crystals of zirconium-oxygen alloys

International Nuclear Information System (INIS)

Ritchie, I.G.; Sprungmann, K.W.; Atrens, A.; Rosinger, H.E.; CEA Centre d'Etudes Nucleaires de Grenoble, 38

1977-01-01

Relaxations of the compliances S 11 -S 12 and S 44 have been observed in single crystals of zirconium-oxygen alloys tested in flexure and in torsion respectively. The relaxations are attributed to the stress-induced reorientation of substitutional impurity atoms (s) paired with interstitial oxygen atoms (i). The results demonstrate that the jump of the interstitial parallel to the basal plane dominates in the reorientation of the s-i pair

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

Directory of Open Access Journals (Sweden)

Sangsoo Lee

2014-07-01

Full Text Available The advanced solid phase crystallization (SPC method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Temperature effect on phase states of quartz nano-crystals in silicon single crystal

International Nuclear Information System (INIS)

Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

2006-01-01

Full text: Oxygen penetrates into the silicon lattice up to the concentration of 2·10 18 cm -3 in the course of growing [1]. By the author's opinion at a low oxygen content the formation of solid solution is possible in the local defect places of the silicon single crystal lattice due to the difference in effective ion radius of oxygen and silicon (r O 0.176 and r Si = 0.065 nm). Upon reaching some critical content (∼ 10 17 cm -3 ), it becomes favorable energetically for oxygen ions to form precipitates (SiO x ) and finally a dielectric layer (stoichiometric inclusions of SiO 2 ). It was shown later that depending on the growth conditions, indeed the quartz crystal inclusions are formed in the silicon single crystals at an amount of 0.3 /0.5 wt. % [2]. However the authors did not study a phase state of the quartz inclusions. Therefore the aim of this work was to study a phase state of the quartz inclusions in silicon crystal at various temperatures. We examined the silicon single crystals grown by Czochralski technique, which were cut in (111) plane in the form of disk of 20 mm diameter and 1.5 thickness and had hole conductivity with the specific resistance ρ o ≅ 1/10 Ohm cm. The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N 0 ≅ 2/ 4·10 17 cm -3 and N B ≅ 3*10 15 cm -3 . Structure was analyzed at the set-up DRON-UM1 with high temperature supply UVD-2000 ( CuK = 0.1542 nm) at the temperatures of 300, 1173 and 1573 K measured with platinum-platinum-rhodium thermocouple. The high temperature diffraction spectrum measured at 1573 K in the angle range (2Θ≅10/70 d egree ) there is only one main structure reflection (111) with a high intensity and d/n ≅ 0.3136 nm (2 Θ≅ 28.5 d egree ) from the matrix lattice of silicon single crystal. The weak line at 2 Θ≅ 25.5 d egree ( d/n≅0.3136 nm) is β component of the main reflection (111), and the weak structure peak at 2Θ≅59 d egree ( d/n≅ 0.1568 nm

Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Science.gov (United States)

Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

2014-09-01

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

Large-scale membrane transfer process: its application to single-crystal-silicon continuous membrane deformable mirror

International Nuclear Information System (INIS)

Wu, Tong; Sasaki, Takashi; Hane, Kazuhiro; Akiyama, Masayuki

2013-01-01

This paper describes a large-scale membrane transfer process developed for the construction of large-scale membrane devices via the transfer of continuous single-crystal-silicon membranes from one substrate to another. This technique is applied for fabricating a large stroke deformable mirror. A bimorph spring array is used to generate a large air gap between the mirror membrane and the electrode. A 1.9 mm × 1.9 mm × 2 µm single-crystal-silicon membrane is successfully transferred to the electrode substrate by Au–Si eutectic bonding and the subsequent all-dry release process. This process provides an effective approach for transferring a free-standing large continuous single-crystal-silicon to a flexible suspension spring array with a large air gap. (paper)

Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

Directory of Open Access Journals (Sweden)

Hui-Jun Guo

2014-09-01

Full Text Available Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.

Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

International Nuclear Information System (INIS)

Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

2011-01-01

Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

Twinning processes in Cu-Al-Ni martensite single crystals investigated by neutron single crystal diffraction method

International Nuclear Information System (INIS)

Molnar, P.; Sittner, P.; Novak, V.; Lukas, P.

2008-01-01

A neutron single crystal diffraction method for inspecting the quality of martensite single crystals is introduced. True interface-free martensite single crystals are indispensable for, e.g. measurement of elastic constants of phases by ultrasonic techniques. The neutron diffraction method was used to detect and distinguish the presence of individual lattice correspondence variants of the 2H orthorhombic martensite phase in Cu-Al-Ni as well as to follow the activity of twinning processes during the deformation test on the martensite variant single crystals. When preparing the martensite single variant prism-shaped crystals by compression deformation method, typically a small fraction of second unwanted martensitic variant (compound twin) remains in the prism samples. Due to the very low stress (∼1 MPa) for the compound twinning in many shape memory alloys, it is quite difficult not only to deplete the martensite prisms of all internal interfaces but mainly to keep them in the martensite single variant state for a long time needed for further investigations

Buckling of Single-Crystal Silicon Nanolines under Indentation

Directory of Open Access Journals (Sweden)

Min K. Kang

2008-01-01

Full Text Available Atomic force microscope-(AFM- based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.

Investigation of the vibration spectrum of SbSI crystals in harmonic and in anharmonic approximations

International Nuclear Information System (INIS)

Audzijonis, A.; Zigas, L.; Vinokurova, I.V.; Farberovic, O.V.; Zaltauskas, R.; Cijauskas, E.; Pauliukas, A.; Kvedaravicius, A.

2006-01-01

The force constants of SbSI crystal have been calculated by the pseudo-potential method. The frequencies and normal coordinates of SbSI vibration modes along the c (z) direction have been determined in harmonic approximation. The potential energies of SbSI normal modes dependence on normal coordinates along the c (z) direction V(z) have been determined in anharmonic approximation, taking into account the interaction between the phonons. It has been found, that in the range of 30-120 cm -1 , the vibrational spectrum is determined by a V(z) double-well normal mode, but in the range of 120-350 cm -1 , it is determined by a V(z) single-well normal mode

Oxide meets silicide. Synthesis and single-crystal structure of Ca{sub 21}SrSi{sub 24}O{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology

2017-06-01

A few black, rectangular thin plates of Ca{sub 21}SrSi{sub 24}O{sub 2} were obtained by serendipity in a solid-state reaction of calcium metal, strontium chloride and silicon powder at 1200 K for 2 days designed to produce 'Ca{sub 2}SrCl{sub 2}[Si{sub 3}]'. The title compound forms next to some CaSi and some remaining educts. Ca{sub 21}SrSi{sub 24}O{sub 2} crystallizes in the monoclinic space group C2/m (no. 12) with unit cell parameters of a=1895.2(2), b=450.63(5) and c=1397.33(18) pm and β=112.008(7) (Z=1). The title compound shows planar, eight-membered, kinked Si{sub 8} chains with Si-Si distances between 241.4 and 245.0 pm indicating bonding interactions and kinked 'rope ladders' connecting the chains with interatomic Si-Si distances in the range 268.1-274.7 pm. Embedded in between these silicon substructures are columns of oxygen centered, apex sharing [(Ca{sub 1-x} Sr{sub x}){sub 6/2}O] octahedra and calcium ions.

Normal state resistivity of single crystalline V3Si as a function of neutron irradiation

International Nuclear Information System (INIS)

Caton, R.; Viswanathan, R.

1978-01-01

Analysis of the normal state resistivity of a neutron damaged single crystal of V 3 Si shows two different regions of behavior: one for T/sub c/ equal to or greater than 10 0 K and another for T/sub c/ equal to or less than 10 0 K

Crystal structure and anisotropic magnetic properties of new ferromagnetic Kondo lattice compound Ce(Cu,Al,Si){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Maurya, A.; Thamizhavel, A.; Dhar, S.K. [Department of Condensed Matter Physics & Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400 005 (India); Provino, A.; Pani, M.; Costa, G.A. [Department of Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova (Italy); Institute SPIN-CNR, Corso Perrone 24, 16152 Genova (Italy)

2017-03-15

Single crystals of the new compound CeCu{sub 0.18}Al{sub 0.24}Si{sub 1.58} have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi{sub 2} (tetragonal α-ThSi{sub 2}-type, Pearson symbol tI12, space group I4{sub 1}/amd) obtained by partial substitution of Si by Cu and Al atoms but showing full occupation of the Si crystal site (8e). While CeSi{sub 2} is a well-known valence-fluctuating paramagnetic compound, the CeCu{sub 0.18}Al{sub 0.24}Si{sub 1.58} phase orders ferromagnetically at T{sub C}=9.3 K. At low temperatures the easy-axis of magnetization is along the a-axis, which re-orients itself along the c-axis above 30 K. The presence of hysteresis in the magnetization curve, negative temperature coefficient of resistivity at high temperatures, reduced jump in the heat capacity and a relatively lower entropy released up to the ordering temperature, and enhanced Sommerfeld coefficient (≈100 mJ/mol K{sup 2}) show that CeCu{sub 0.18}Al{sub 0.24}Si{sub 1.58} is a Kondo lattice ferromagnetic, moderate heavy fermion compound. Analysis of the high temperature heat capacity data in the paramagnetic region lets us infer that the crystal electric field split doublet levels are located at 178 and 357 K, respectively, and Kondo temperature (8.4 K) is of the order of T{sub C} in CeCu{sub 0.18}Al{sub 0.24}Si{sub 1.58}.

Depth-of-interaction measurement in a single-layer crystal array with a single-ended readout using digital silicon photomultiplier

International Nuclear Information System (INIS)

Lee, Min Sun; Lee, Jae Sung

2015-01-01

We present the first experimental evaluation of a depth-of-interaction (DOI) positron emission tomography (PET) detector using a digital silicon photomultiplier (dSiPM). To measure DOI information from a mono-layer array of scintillation crystals with a single-ended readout, our group has previously proposed and developed a new method based on light spread using triangular reflectors. Since this method relies on measurement of the light distribution, dSiPM, which has a fully digital interface, has several merits for our DOI measurement. The DOI PET detector comprised of a dSiPM sensor (DPC-3200-22-44) coupled with a 14   ×   14 array of 2 mm  ×  2 mm  ×  20 mm unpolished LGSO crystals. All crystals were covered with triangular reflectors. To obtain a good performance of the DOI PET detector, several parameters of detector were selected as a preliminary experiment. Detector performance was evaluated with the selected parameters and the optimal experimental setup, and a DOI measurement was conducted by irradiating the crystal block at five DOI positions spaced at intervals of 4 mm. Maximum-likelihood estimation was employed for DOI positioning and the optimal DOI estimation scheme was also investigated in this study. As a result, the DOI PET detector showed clear crystal identification. The energy resolution (full-width at half-maximum (FWHM)) averaged over all depths was 10.21%  ±  0.15% at 511 keV, and time resolution averaged over all depths was 1198.61   ±   39.70 ps FWHM. The average DOI positioning accuracy for all depths was 74.22%  ±  6.77%, which equates to DOI resolution of 4.67 mm. Energy and DOI resolutions were uniform over all crystal positions except for the back parts of the array. Furthermore, additional simulation studies were conducted to verify the results of our DOI measurement method that is combined with dSiPM technology. In conclusion, our continuous DOI PET detector

Single crystal growth and nonlinear optical properties of Nd3+ doped STGS crystal for self-frequency-doubling application

Science.gov (United States)

Chen, Feifei; Wang, Lijuan; Wang, Xinle; Cheng, Xiufeng; Yu, Fapeng; Wang, Zhengping; Zhao, Xian

2017-11-01

The self-frequency-doubling crystal is an important kind of multi-functional crystal materials. In this work, Nd3+ doped Sr3TaGa3Si2O14 (Nd:STGS) single crystals were successfully grown by using Czochralski pulling method, in addition, the nonlinear and laser-frequency-doubling properties of Nd:STGS crystals were studied. The continuous-wave laser at 1064 nm was demonstrated along different physical axes, where the maximum output power was obtained to be 295 mW for the Z-cut samples, much higher than the Y-cut (242 mW) and X-cut (217 mW) samples. Based on the measured refractive indexes, the phase matching directions were discussed and determined for type I (42.5°, 30°) and type II (69.5°, 0°) crystal cuts. As expected, self-frequency-doubling green laser at 529 nm was achieved with output powers being around 16 mW and 12 mW for type I and type II configurations, respectively.

Single-crystal growth of ceria-based materials

International Nuclear Information System (INIS)

Ulbrich, Gregor

2015-01-01

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Polysilicon tft's fabricated by crystallization of a-si:h enhanced by hydrogen plasma

International Nuclear Information System (INIS)

Gallegos, O.; Garcia, R.; Estrada, M.; Cerdeira, A.; Leyva, A.

2001-01-01

Poly-silicon thin film transistors (TFTs) are widely applied in integrated LCD driving circuits and image sensors, because they have better characteristics than a-Si:H TFTs. Poly-silicon can deposited or obtained by crystallization of amorphous silicon layers after annealing above 900 oC. For the last years, research is been done in order to crystallize a- Si:H films at low temperature and time budget. In this work we present crystallization at 650 oC of intrinsic and doped a-Si:H layers after a hydrogen plasma annealing to enhanced the crystallization process. Intrinsic layers crystallized in 4-6 hours after annealing in hydrogen plasma, while doped layers crystallized for the same annealing times, independently of been or not annealed in hydrogen plasma. Layers were characterized by XRD and by resistivity measurements. Resistivity of n-type layers changed from 300 to 0.02 cm after crystallization. Resistivity of i-layers also decreased, but both values are very high and it is difficult to determine with precision its change. The high resistivity of the polycrystalline layers is determined by the small grain size. Poly-silicon TFTs were fabricated using the above procedure to crystallize the amorphous layers. The complete fabrication process is presented. Output characteristics are shown and compared to same characteristics for a-Si:H TFTs fabricated simultaneously with the exception of the crystallization process. TFTs' sensibility to light was also used to verify that crystallization took place

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

International Nuclear Information System (INIS)

Taboada, A. G.; Kreiliger, T.; Falub, C. V.; Känel, H. von; Isa, F.; Isella, G.; Salvalaglio, M.; Miglio, L.; Wewior, L.; Fuster, D.; Alén, B.; Richter, M.; Uccelli, E.; Niedermann, P.; Neels, A.; Dommann, A.; Mancarella, F.

2014-01-01

We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Energy Technology Data Exchange (ETDEWEB)

Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Isa, F.; Isella, G. [L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Wewior, L.; Fuster, D.; Alén, B. [IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), C/Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Richter, M.; Uccelli, E. [Functional Materials Group, IBM Research-Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Niedermann, P.; Neels, A.; Dommann, A. [Centre Suisse d' Electronique et Microtechnique, Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Mancarella, F. [CNR-IMM of Bologna, Via Gobetti 101, I-40129 Bologna (Italy)

2014-01-13

We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

Crystallization of amorphous Fe78Si9B13 alloy

International Nuclear Information System (INIS)

Jakubczyk, E; Krajczyk, A; Jakubczyk, M

2007-01-01

The crystallization process of Fe 78 Si 9 B 13 metallic glass was investigated by DSC, X-ray diffraction, electrical resistivity, Hall effect and TEM methods. The investigations proved two-stages crystallization. By means of non-isothermal DSC experiments the activation energy and the Avrami exponent were determined for both stages. The created phases: α-Fe(Si) and (Fe,Si) 2 B were identified on the basis of X-ray and TEM investigations. However, TEM observations showed also a little amount of the FeB 49 phase as well as some rest of the amorphous phase. The electrical and Hall resistivities decrease abruptly after the creation of the phases out of the amorphous matrix

Crystallization kinetics in Si-1 at%Sn during rapid solidification in undercooled melt

Science.gov (United States)

Kuribayashi, K.; Ozawa, S.; Nagayama, K.; Inatomi, Y.

2017-06-01

In order to elucidate the cause of the morphological transition of crystals growing in an undercooled melt of semiconducting materials, we carried out the containerless solidification of undoped Si and Si-1 at%Sn using a CO2 laser-equipped electromagnetic levitator (EML). The crystallization of these materials was successfully achieved under controlled undercooling. The relation between the shape of growing crystals and the degree of undercooling in Si-1 at%Sn was similar to that in undoped Si; that is, plate-like needle crystals were observed at low undercooling, whereas at medium and high undercooling the shape of growing crystals changed to massive dendrites. The grain-size of as-solidified samples of Si-1 at%Sn was remarkably small compared with that of undoped Si. The surface morphologies of samples solidified by dropping the melt onto a chill plate of mirror-polished silicon consisted of typical twin-related dendrites. On the other hand, samples that were dropped from the undercooled state consisted of twin-free dendrites. The nucleation rate of two-dimensional nuclei calculated on the basis of two mechanisms, which are the twin-plane re-entrant edge mechanism and the twin-free mechanism, suggested that the morphological transition to twin-free dendrites from twin-related dendrites occurs when the degree of undercooling becomes larger than the critical value. These results indicate that the cause of the morphological transition of Si growing in the undercooled melt is not the roughening transition of the crystal-melt interface but the transition of the nucleation kinetics to the twin-free mechanism from the twin-related mechanism.

Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

Science.gov (United States)

2017-10-09

for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

2016-10-30

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

International Nuclear Information System (INIS)

Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

2016-01-01

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

Attenuation of Reactor Gamma Radiation and Fast Neutrons Through Large Single-Crystal Materials

International Nuclear Information System (INIS)

Adib, M.

2009-01-01

A generalized formula is given which, for neutron energies in the range 10-4< E< 10 eV and gamma rays with average energy 2 MeV , permits calculation of the transmission properties of several single crystal materials important for neutron scattering instrumentation. A computer program Filter was developed which permits the calculation of attenuation of gamma radiation, nuclear capture, thermal diffuse and Bragg-scattering cross-sections as a function of materials constants, temperature and neutron energy. The applicability of the deduced formula along with the code checked from the obtained agreement between the calculated and experimental neutron transmission through various single-crystals A feasibility study for use of Si, Ge, Pb, Bi and sapphire is detailed in terms of optimum crystal thickness, mosaic spread and cutting plane for efficient transmission of thermal reactor neutrons and for rejection of the accompanying fast neutrons and gamma rays.

Structural study of quasi-one-dimensional vanadium pyroxene LiVSi{sub 2}O{sub 6} single crystals

Energy Technology Data Exchange (ETDEWEB)

Ishii, Yuto [Department of Physics, Hokkaido University, Sapporo 060-0810 (Japan); Matsushita, Yoshitaka [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Oda, Migaku; Yoshida, Hiroyuki [Department of Physics, Hokkaido University, Sapporo 060-0810 (Japan)

2017-02-15

Single crystals of quasi-one-dimensional vanadium pyroxene LiVSi{sub 2}O{sub 6} were synthesized and the crystal structures at 293 K and 113 K were studied using X-ray diffraction experiments. We found a structural phase transition from the room-temperature crystal structure with space group C2/c to a low-temperature structure with space group P2{sub 1}/c, resulting from a rotational displacement of SiO{sub 4} tetrahedra. The temperature dependence of magnetic susceptibility shows a broad maximum around 116 K, suggesting an opening of the Haldane gap expected for one-dimensional antiferromagnets with S=1. However, an antiferromagnetic long-range order was developed below 24 K, probably caused by a weak inter-chain magnetic coupling in the compound. - Graphical abstract: Low temperature crystal structure of LiVSi{sub 2}O{sub 6} and an orbital arrangement within the V-O zig-zag chain along the c-axis. - Highlights: • A low temperature structure of LiVSi{sub 2}O{sub 6} was determined by single crystal X-ray diffraction measurements. • The origin of the structural transition is a rotational displacement of SiO{sub 4} tetrahedra. • The uniform orbital overlap in the V-O zigzag chain makes the system a quasi one-dimensional antiferromagnet.

Crystallization kinetics and magnetic properties of FeSiCr amorphous alloy powder cores

Energy Technology Data Exchange (ETDEWEB)

Xu, Hu-ping [School of Logistics Engineering, Wuhan University of Technology, Wuhan 430063 (China); Wang, Ru-wu, E-mail: ruwuwang@hotmail.com [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China); College of Materials Science and Metallurgical Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Wei, Ding [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Zeng, Chun [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China)

2015-07-01

The crystallization kinetics of FeSiCr amorphous alloy, characterized by the crystallization activation energy, Avrami exponent and frequency factor, was studied by non-isothermal differential scanning calorimetric (DSC) measurements. The crystallization activation energy and frequency factor of amorphous alloy calculated from Augis–Bennett model were 476 kJ/mol and 5.5×10{sup 18} s{sup −1}, respectively. The Avrami exponent n was calculated to be 2.2 from the Johnson–Mehl–Avrami (JMA) equation. Toroid-shaped Fe-base amorphous powder cores were prepared from the commercial FeSiCr amorphous alloy powder and subsequent cold pressing using binder and insulation. The characteristics of FeSiCr amorphous alloy powder and the effects of compaction pressure and insulation content on the magnetic properties, i.e., effective permeability μ{sub e}, quality factor Q and DC-bias properties of FeSiCr amorphous alloy powder cores, were investigated. The FeSiCr amorphous alloy powder cores exhibit a high value of quality factor and a stable permeability in the frequency range up to 1 MHz, showing superior DC-bias properties with a “percent permeability” of more than 82% at H=100 Oe. - Highlights: • The crystallization kinetics of FeSiCr amorphous alloy was investigated. • The FeSiCr powder cores exhibit a high value of Q and a stable permeability. • The FeSiCr powder cores exhibit superior DC-bias properties.

Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Preidel, V., E-mail: veit.preidel@helmholtz-berlin.de; Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Division Renewable Energy, Kekuléstr. 5, 12489 Berlin (Germany)

2015-06-14

Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

Premonochromator characteristics of Si and Ge crystals for nuclear Bragg scattering

International Nuclear Information System (INIS)

Harami, Taikan

1990-07-01

The use of monochromator plays an important role as monochromatizing the photon from a facility having an electron storage ring to a narrow band width about the wavelength determined by the Bragg condition. This paper describes the dynamical diffraction formulae and collects the characteristics data of premonochromators of Si and Ge crystals for nuclear Bragg scattering. The numerical studies show the following data. (1) Reflectivity, Bragg reflection width, energy resolution and integral reflecting power for the various reflections of Si and Ge crystals at the photon with the resonance excitation energy of the Moessbauer nuclei of 181 Tm(6.21 keV), 169 Tm(8.42 keV), 57 Fe(14.41 keV), 119 Sn(23.87 keV) and 238 U(44.70 keV). (2) Tables of susceptibilities and figures of rocking curves for the various reflections of Si and Ge crystals. (author)

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

Science.gov (United States)

Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

2013-11-15

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

Growth of emerald single crystals

International Nuclear Information System (INIS)

Bukin, G.V.; Godovikov, A.A.; Klyakin, V.A.; Sobolev, V.S.

1986-01-01

In addition to its use for jewelry, emerald can also be used in low-noise microwave amplifiers. The authors discuss flux crystallization of emerald and note that when emerald is grown by this method, it is desirable to use solvents which dissolve emerald with minimum deviations from congruence but at the same time with sufficient high efficiency. Emerald synthesis and crystal growth from slowly cooled solutions is discussed as another possibility. The techniques are examined. Vapor synthesis and growht of beryl crystals re reviewed and the authors experimentally study the seeded CVD crystallization of beryl from BeO, Al 2 O 3 and SiO 2 oxides, by using complex compounds as carrier agents. The color of crystals of emerald and other varieties of beryl is detemined by slelective light absorption in teh visible part of the spectrum and depends on the density and structural positions of chromphore ions: chromium, iron, vanadium, nickel, manganese and cobalt

Structure of single-chain single crystals of isotactic polystyrene and their radiation resistance

International Nuclear Information System (INIS)

Bu Haishan; Cao Jie; Xu Shengyong; Zhang Ze

1997-01-01

The structure of the single-chain single crystals of isotactic polystyrene (i-PS) was investigated by electron diffraction (ED) and high resolution electron microscopy (HREM). The nano-scale single-chain single crystals were found to be very stable to electron irradiation. According to the unit cell of i-PS crystals, the reflection rings in ED pattern and the lattice fringes in HREM images could be indexed, but the lower-index diffractions were not found. It is proposed that the single-chain single crystals are very small, thus secondary electrons may be allowed to escape and radiation damage is highly reduced, and that there are less lower-index lattice planes in the single-chain single crystals to provide sufficient diffraction intensity for recording. HREM images can be achieved at room temperature in the case of single-chain single crystals because of its stability to electron irradiation, therefore, this might be a novel experimental approach to the study of crystal structure of macromolecules

Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

International Nuclear Information System (INIS)

Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

2011-01-01

We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

Free-standing nanomechanical and nanophotonic structures in single-crystal diamond

Science.gov (United States)

Burek, Michael John

Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast

Ion-beam-driven amorphization of Ca2La8(SiO4)6O2 single crystals

International Nuclear Information System (INIS)

Weber, W.J.; Hess, N.J.; Wang, L.M.

1993-11-01

Single crystals of Ca 2 La 8 (SiO 4 ) 6 O 2 , with 1% Nd substituted for La, were irradiated with 0.8 MeV Ne + and 1.5 MeV Kr + ions from 15 to 773 K. The irradiations were carried out using the HVEM-Tandem Facility at Argonne National Laboratory. The structural changes and the ion fluence for complete amorphization were determined by in situ transmission electron microscopy. The ion fluence for complete amorphization increased with temperature in two stages associated with defect annealing processes. The critical temperature for amorphization increased from ∼360 K for 0.8 MeV Ne + to ∼710 K for 1.5 MeV Kr + . During in situ annealing studies, irradiation-enhanced recrystallization was observed at 923 K. Spatially-resolved fluorescence spectra of the Nd ion excited with 488.0 mn laser excitation showed marked line-broadening toward the center of the amorphous regions. Initial measurements indicate the subtle shifts of the 9 I 9/2 groundstate energy levels can be measured by pumping directly into the excited state 4 F 3/2 manifold suggesting that the line broadening observed originates from a distribution of geometrically distorted Nd sites

Growth of single crystals of BaFe12O19 by solid state crystal growth

International Nuclear Information System (INIS)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-01-01

Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

Pilot tests of a PET detector using the TOF-PET ASIC based on monolithic crystals and SiPMs

International Nuclear Information System (INIS)

Aguilar, A.; González-Montoro, A.; González, A.J.; Hernández, L.; Monzó, J.M.; Benlloch, J.M.; Bugalho, R.; Ferramacho, L.

2016-01-01

In this work we show pilot tests of PET detector blocks using the TOF-PET ASIC, coupled to SiPM detector arrays and different crystal configurations. We have characterized the main ASIC features running calibration processes to compensate the time dispersion among the different ASIC/SiPM paths as well as for the time walk on the arrival of optical photons. The aim of this work is to use of LYSO monolithic crystals and explore their photon Depth of Interaction (DOI) capabilities, keeping good energy and spatial resolutions. First tests have been carried out with crystal arrays. Here we made it possible to reach a coincidence resolving times (CRT) of 370 ps FWHM, with energy resolutions better than 20% and resolving well 2 mm sized crystal elements. When using monolithic crystals, a single-pixel LYSO reference crystal helped to explore the CRT performance. We studied different strategies to provide the best timestamp determination in the monolithic scintillator. Times around 1 ns FWHM have been achieved in these pilot studies. In terms of spatial and energy resolution, values of about 3 mm and better than 30% were found, respectively. We have also demonstrated the capability of this system (monolithic and ASIC) to return accurate DOI information.

Effect of Si and Co on the crystallization of Al-Ni-RE amorphous alloys

Energy Technology Data Exchange (ETDEWEB)

Wang, S.H. [Key Lab of Liquid structure and Heredity of Materials, Ministry of Education, South Campus of Shandong University, Jinan 250061 (China); Bian, X.F. [Key Lab of Liquid structure and Heredity of Materials, Ministry of Education, South Campus of Shandong University, Jinan 250061 (China)], E-mail: xfbian@sdu.edu.cn

2008-04-03

Crystallization of Al{sub 83}Ni{sub 10}Si{sub 2}Ce{sub 5}, Al{sub 85}Ni{sub 10}Ce{sub 5}, Al{sub 87}Ni{sub 7}Nd{sub 6} and Al{sub 87}Ni{sub 5}Co{sub 2}Nd{sub 6} amorphous alloys has been studied by using X-ray diffraction (XRD) and differential scanning calorimetry (DSC). The multiple transition metal (TM) (containing metalloid element) have significant effect on the crystallization behavior. A small addition of Si transforms a eutectic crystallization (Al{sub 85}Ni{sub 10}Ce{sub 5}) to a primary crystallization (Al{sub 83}Ni{sub 10}Si{sub 2}Ce{sub 5}); while a small addition of Co transforms a primary crystallization (Al{sub 87}Ni{sub 7}Nd{sub 6}) to a eutectic crystallization (Al{sub 87}Ni{sub 5}Co{sub 2}Nd{sub 6}). In addition, the activation energies for crystallization (E{sub a}) are obtained to be 191, 290, 221 and 166 kJ/mol for the Al{sub 83}Ni{sub 10}Si{sub 2}Ce{sub 5}, Al{sub 85}Ni{sub 10}Ce{sub 5}, Al{sub 87}Ni{sub 5}Co{sub 2}Nd{sub 6} and Al{sub 87}Ni{sub 7}Nd{sub 6} amorphous alloys based on the Kissinger method, respectively. It is found that the primary crystallization of fcc-Al is characteristic of a lower E{sub a}, as compared with eutectic crystallization.

Relaxor-PT Single Crystal Piezoelectric Sensors

Directory of Open Access Journals (Sweden)

Xiaoning Jiang

2014-07-01

Full Text Available Relaxor-PbTiO3 piezoelectric single crystals have been widely used in a broad range of electromechanical devices, including piezoelectric sensors, actuators, and transducers. This paper reviews the unique properties of these single crystals for piezoelectric sensors. Design, fabrication and characterization of various relaxor-PT single crystal piezoelectric sensors and their applications are presented and compared with their piezoelectric ceramic counterparts. Newly applicable fields and future trends of relaxor-PT sensors are also suggested in this review paper.

Phenomenological crystal-field model of the magnetic and thermal properties of the Kondo-like system UCu2Si2

Science.gov (United States)

Troć, R.; Gajek, Z.; Pikul, A.; Misiorek, H.; Colineau, E.; Wastin, F.

2013-07-01

The transport properties described previously [Troć , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.85.224434 85, 224434 (2012)] as well as the magnetic and thermal properties presented in this paper, observed for single-crystalline UCu2Si2, are discussed by assuming a dual (localized-itinerant) scenario. The electronic states of the localized 5f electrons in UCu2Si2 are constructed using the effective Hamiltonian known for ionic systems, allowing us to treat the Coulomb, spin-orbital, and crystal-field interactions on equal footing. The space of parameters has been restricted in the initial steps with the aid of the angular overlap model approximation. The final crystal-field parameters, obtained from the refined steps of calculations, are relatively large (in absolute values), which we attribute to the hybridization characteristic of the metallic systems on the verge of localization. The proposed crystal-field model reproduces correctly with satisfactory accuracy the magnetic and thermal properties of UCu2Si2 in agreement also with the transport properties reported previously. Considerable crystal-field splitting of the ground multiplet of 2760 K is responsible for a large anisotropy in the magnetic behavior, observed in the whole temperature range explored.

Preparation of TiC single crystals

International Nuclear Information System (INIS)

Scheerer, B.; Fink, J.; Reichardt, W.

1975-07-01

TiC single crystals were prepared by vertical zone melting for measurements of the phonon dispersion by inelastic neutron scattering. The influence of the starting material and of the growing conditions on the growth of the crystal were studied. The crystals were characterized by chemical methods, EMX and neutron diffraction. It was possible to grow single crystals with a volume of up to 0.6 cm 3 and mosaic spread of less then 0.4 0 . (orig.) [de

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

International Nuclear Information System (INIS)

Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

2005-01-01

Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

Electrically Anisotropic Layered Perovskite Single Crystal

KAUST Repository

Li, Ting-You

2016-04-01

Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.

Structure, magnetism, and transport of single-crystalline R NiSi3 (R = Y, Gd-Tm, Lu)

Science.gov (United States)

Arantes, Fabiana R.; Aristizábal-Giraldo, Deisy; Masunaga, Sueli H.; Costa, Fanny N.; Ferreira, Fabio F.; Takabatake, Toshiro; Mendonça-Ferreira, Leticie; Ribeiro, Raquel A.; Avila, Marcos A.

2018-04-01

We report on the physical properties of the intermetallic series R NiSi3 (R =Y , Gd-Tm, Lu). High quality single crystals with platelike morphology were grown using the Sn flux method. X-ray powder diffraction data show that this series crystallizes in the orthorhombic space group Cmmm, and Laue patterns indicate that the b axis remains perpendicular to the plane of the plates. Magnetization measurements show anisotropic antiferromagnetic ground states for R = Gd-Tm with Néel temperatures ranging from TN=2.6 K (TmNiSi3) up to 32.2 K (TbNiSi3), as well as metamagnetic transitions that in some cases appear together with hysteresis (TbNiSi3,DyNiSi3, and HoNiSi3). The easy axis changes from a axis to b axis on going from R = Gd-Ho to R = Er-Tm. All transitions from antiferromagnetic to paramagnetic states are clearly marked by sharp peaks in specific heat as well as in the derivative of resistivity measurements, which show metallic temperature dependence for all compounds and residual values in the range of 1 μ Ω cm . DyNiSi3 has two close phase transitions, while HoNiSi3 presents distinct critical temperatures for applied fields in the a or c directions (10.4 and 6.3 K, respectively), pointing to possible component-specific ordering of the local magnetic moments.

Magnetic properties of a URhSi single crystal

Czech Academy of Sciences Publication Activity Database

Honda, F.; Andreev, Alexander V.; Sechovský, V.; Prokeš, K.

329-333, - (2003), s. 486-488 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Keywords : URhSi * magnetization * magnetic susceptibility * specific heat Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.908, year: 2003

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

Science.gov (United States)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Photoluminescence topography of fluorescent SiC and its corresponding source crystals

DEFF Research Database (Denmark)

Wilhelm, M.; Kaiser, M.; Jokubavicus, V.

2013-01-01

The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence...

Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

Energy Technology Data Exchange (ETDEWEB)

Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

1998-06-01

It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

Deformation Mechanism and Recrystallization Relationships in Galfenol Single Crystals: On the Origin of Goss and Cube Orientations

Science.gov (United States)

Na, Suok-Min; Smith, Malcolm; Flatau, Alison B.

2018-06-01

In this work, deformation mechanism related to recrystallization behavior in single-crystal disks of Galfenol (Fe-Ga alloy) was investigated to gain insights into the influence of crystal orientations on structural changes and selective grain growth that take place during secondary recrystallization. We started with the three kinds of single-crystal samples with (011)[100], (001)[100], and (001)[110] orientations, which were rolled and annealed to promote the formation of different grain structures and texture evolutions. The initial Goss-oriented (011)[100] crystal mostly rotated into {111} orientations with twofold symmetry and shear band structures by twinning resulted in the exposure of rolled surface along {001} orientation during rolling. In contrast, the Cube-oriented (001)[100] single crystal had no change in texture during rolling with the thickness reduction up to 50 pct. The {123} slip systems were preferentially activated in these single crystals during deformation as well as {112} slip systems that are known to play a role in primary slip of body-centered cubic (BCC) materials such as α-iron and Fe-Si alloys. After annealing, the deformed Cube-oriented single crystal had a small fraction ( orientation, associated with {123} slip systems as well. This was expected to provide potential sites of nucleation for secondary recrystallization; however, no Goss- and Cube-oriented components actually developed in this sample during secondary recrystallization. Those results illustrated how the recrystallization behavior can be influenced by deformed structure and the slip systems.

Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

Science.gov (United States)

Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

2011-08-23

We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

Electrically Anisotropic Layered Perovskite Single Crystal

KAUST Repository

Li, Ting-You

2016-01-01

-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

Science.gov (United States)

Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

2016-10-05

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Properties of single crystal beta''-aluminas

International Nuclear Information System (INIS)

Bates, J.B.; Brown, G.M.; Kaneda, T.; Brundage, W.E.; Wang, J.C.; Engstrom, H.

1979-01-01

Large single crystals of sodium beta''-alumina were grown by slow evaporation of Na 2 O at 1690 0 C from a mixture of Na 2 CO 3 , MgO, and Al 2 O 3 . Polarized Raman measurements were made on the Na β'' single crystals and on single crystals of Li, K, Rb, and Ag β'' prepared by ion exchange of Na β''. The low frequency Raman spectra of Na, K, Rb, and Ag β'' contained four or more bands due to vibrations of the mobile cations. These results were analyzed by assuming the spectra to be due to the normal modes of a defect cluster consisting of a cation vacancy surrounded by three cations. From model calculations, the Raman band of Na β'' at 33 cm -1 is assigned to the attempt mode for diffusion of Na + ions. The structure of a Ag β'' single crystal was investigated by neutron diffraction, and 20% of the Ag + ion sites were found to be vacant

Ultra-large single crystals by abnormal grain growth.

Science.gov (United States)

Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke

2017-08-25

Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

Impact-parameter dependence of energy loss for 625-keV H+ ions in Si single crystals

International Nuclear Information System (INIS)

Dygo, A.; Boshart, M.A.; Seiberling, L.E.; Kabachnik, N.M.

1994-01-01

The energy distributions for 625-keV H + ions transmitted through thin Si single crystals are studied for detailed angular scans through the left-angle 110 right-angle and left-angle 100 right-angle axial as well as the {111} and {110} planar channels. Well-resolved structures in the distributions taken near the left-angle 110 right-angle axial direction are observed. The experimental energy-loss distributions are very well reproduced by a Monte Carlo simulation using the semiclassical approximation model for core electrons and the two-component free-electron-gas model for valence electrons. The best fit to the data is obtained if the model energy losses are scaled up for core electrons and down for valence electrons by several percent. The experimental distributions can also be reproduced by assuming the mean excitation energy for distant collisions of the ion with core electrons equal to 1.4 times the binding energy for a given shell. No significant differences between the distributions obtained using the solid-state and free-atom valence electron densities have been found. The evolution of the distributions for the left-angle 110 right-angle axial scan is discussed in terms of ion trajectories and the flux distribution. Also, the azimuthally averaged mean energy loss is studied as a function of tilt angle with respect to the left-angle 110 right-angle axis

Growth and characterisation of lead iodide single crystals

International Nuclear Information System (INIS)

Tonn, Justus

2012-01-01

The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of

Isotopically pure single crystal epitaxial diamond films and their preparation

International Nuclear Information System (INIS)

Banholzer, W.F.; Anthony, T.R.; Williams, D.M.

1992-01-01

The present invention is directed to the production of single crystal diamond consisting of isotopically pure carbon-12 or carbon-13. In the present invention, isotopically pure single crystal diamond is grown on a single crystal substrate directly from isotopically pure carbon-12 or carbon-13. One method for forming isotopically pure single crystal diamond comprises the steps of placing in a reaction chamber a single substrate heated to an elevated diamond forming temperature. Another method for forming isotopically pure single crystal diamond comprises diffusing isotopically pure carbon-12 or carbon-13 through a metallic catalyst under high pressure to a region containing a single crystal substrate to form an isotopically pure single crystal diamond layer on said single crystal substrate

ThSi_2 type ytterbium disilicide and its analogues YbT_xSi_2_-_x (T = Cr, Fe, Co)

International Nuclear Information System (INIS)

Peter, Sebastian C.; Kanatzidis, Mercouri G.

2012-01-01

YbSi_2 and the derivatives YbT_xSi_2_-_x (T = Cr, Fe, Co) crystallizing in the α-ThSi_2 structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single-crystal X-ray diffraction, I4_1/amd space group and the lattice constants are: a = 3.9868(6) Aa and c = 13.541(3) Aa for YbSi_2, a = 4.0123(6) Aa and c = 13.542(3) Aa for YbCr_0_._2_7Si_1_._7_3, a = 4.0142(6) Aa and c = 13.830(3) Aa for YbCr_0_._7_1Si_1_._2_9, a = 4.0080(6) Aa and c = 13.751(3) Aa for YbFe_0_._3_4Si_1_._6_6, and a = 4.0036(6) Aa, c = 13.707(3) Aa for YbCo_0_._2_1Si_1_._7_9. YbSi_2 and YbT_xSi_2_-_x compounds are polar intermetallics with three-dimensional Si and M (T+Si) polyanion sub-networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Multiple superconducting gaps in MgB2 single crystals from magnetic torque

International Nuclear Information System (INIS)

Atsumi, Toshiyuki; Xu, Mingxiang; Kitazawa, Hideaki; Ishida, Takekazu

2004-01-01

We have measured the magnetic torque of an MgB 2 single crystal in the various different fields below 10 kG by using a torque magnetometer and a 4 K closed cycle refrigerator. The MgB 2 single crystal was synthesized by the vapor transport method. The torque can be measured as an off-balance signal of the Wheatstone bridge of the four piezoresistors on a Si cantilever. The torque curves are analyzed by the Kogan model. The superconducting anisotropy γ is rather independent of temperature in 5 and 10 kG, but is dependent on field up to 60 kG. We consider that the field dependence of γ comes from the nature of the multiple superconducting gaps. The experimental results show that the π-band superconducting gaps have been deteriorated gradually up to a crossover field H * (π) ∼ 20 kG at 10 K when the magnetic field increases

Regrowth of Si and Ge under laser irradiation

International Nuclear Information System (INIS)

Bertolotti, M.; Vitali, G.

1979-01-01

The effects of pulsed laser irradiation on amorphous layers of Si and Ge obtained via ion implantation are considered. Amorphous-polycrystalline, amorphous-single crystal and polycrystalline-single crystal transitions have been obtained. Residual disorder and mechanical damage are considered. (author)

DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT

Directory of Open Access Journals (Sweden)

L. I. Guzilova

2015-05-01

Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values ​​ were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values ​​obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.

Structure and crystallization of SiO2 and B2O3 doped lithium disilicate glasses from theory and experiment.

Science.gov (United States)

Erlebach, Andreas; Thieme, Katrin; Sierka, Marek; Rüssel, Christian

2017-09-27

Solid solutions of SiO 2 and B 2 O 3 in Li 2 O·2SiO 2 are synthesized and characterized for the first time. Their structure and crystallization mechanisms are investigated employing a combination of simulations at the density functional theory level and experiments on the crystallization of SiO 2 and B 2 O 3 doped lithium disilicate glasses. The remarkable agreement of calculated and experimentally determined cell parameters reveals the preferential, kinetically controlled incorporation of [SiO 4 ] and [BO 4 ] at the Li + lattice sites of the Li 2 O·2SiO 2 crystal structure. While the addition of SiO 2 increases the glass viscosity resulting in lower crystal growth velocities, glasses containing B 2 O 3 show a reduction of both viscosities and crystal growth velocities. These observations could be rationalized by a change of the chemical composition of the glass matrix surrounding the precipitated crystal phase during the course of crystallization, which leads to a deceleration of the attachment of building units required for further crystal growth at the liquid-crystal interface.

Confinement stabilises single crystal vaterite rods.

OpenAIRE

Schenk, AS; Albarracin, EJ; Kim, YY; Ihli, J; Meldrum, FC

2014-01-01

Single-crystals of vaterite, the least-stable anhydrous polymorph of CaCO3, are rare in biogenic and synthetic systems. We here describe the synthesis of high aspect ratio single crystal vaterite rods under additive-free conditions by precipitating CaCO3 within the cylindrical pores of track-etch membranes.

Reshock and release response of aluminum single crystal

International Nuclear Information System (INIS)

Huang, H.; Asay, J. R.

2007-01-01

Reshock and release experiments were performed on single crystal aluminum along three orientations and on polycrystalline 1050 aluminum with 50 μm grain size at shock stresses of 13 and 21 GPa to investigate the mechanisms for previously observed quasielastic recompression behavior. Particle velocity profiles obtained during reshocking both single crystals and polycrystalline aluminum from initial shock stresses of 13-21 GPa show similar quasielastic recompression behavior. Quasielastic release response is also observed in all single crystals, but the magnitude of the effect is crystal orientation dependent, with [111] and [110] exhibiting more ideal elastic-plastic release for unloading from the shocked state than for the [100] orientation and polycrystalline aluminum. The quasielastic response of 1050 aluminum is intermediate to that of the [100] and [111] orientations. Comparison of the wave profiles obtained for both unloading and reloading of single crystals and polycrystalline 1050 aluminum from shocked states suggests that the observed quasielastic response of polycrystalline aluminum results from the averaging response of single crystals for shock propagation along different orientations, and that the response of 1050 aluminum with large grain boundaries is not significantly different from the results obtained on single crystal aluminum. The yield strength of the single crystals and 1050 aluminum is found to increase with shock stress, which is consistent with previous results [H. Huang and I. R. Asay, J. Appl. Phys. 98, 033524 (2005)

Growth of single crystals of BaFe12O19 by solid state crystal growth

Science.gov (United States)

Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

2016-10-01

Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

Rare earth concentration in the primary Si crystal in rare earth added Al-21 wt. % Si alloy

Energy Technology Data Exchange (ETDEWEB)

Chang, J.Y.; Kim, G.H. [Korea Inst. of Science and Technology, Seoul (Korea, Republic of); Moon, I.G.; Choi, C.S. [Yonsei Univ., Seoul (Korea, Republic of). Dept. of Metallurgical Engineering

1998-07-03

Al-Si alloys containing more than about 12 wt. % Si exhibit a hypereutectic microstructure, normally consisting of a primary silicon phase in an eutectic matrix. The primary silicon in normal hypereutectic alloys is usually very coarse and thus leads to poor properties to these alloys. Therefore, alloys with a predominantly coarse primary silicon crystal must be modified to ensure adequate mechanical strength and ductility. Further improvement of mechanical properties of these alloys can be achieved by the modification of eutectic microstructure. Therefore, development of a modifier or refiner that can produce both fine primary and eutectic Si is a major factor which can lead to significant enhancement of mechanical properties in hypereutectic Al-Si alloys. Refinement of primary silicon is usually achieved by the addition of phosphor to the melt. On the other hand, it is reported that the rare earth (RE) elements are capable of modifying the eutectic structure of cast Al-Si alloys. According to the literature, Phosphor acts as a heterogeneous nucleation site of Si crystal by forming AlP intermetallic particles at high temperature, i.e., above liquidus temperature of Al-Si alloy. Unlike phosphor, RE was not known to form a stable compound with Al that can act as a nucleation site at high temperature. Therefore, the role of RE as a refiner should be considered by examining the behavior of RE as a solute in the melt. The distribution of RE within the primary Si and in the matrix of the alloy will provide a clue to the role of RE on the modification of primary Si during solidification.

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying; Ren, Zhaohui; Zhu, Yihan; Xiao, Zhen; Liu, Zhenya; Xú , Gang; Mai, Jiangquan; Li, Xiang; Shen, Ge; Han, Gaorong

2012-01-01

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single

Crystallization and chemical durability of glasses in the system Bi2O3-SiO2

International Nuclear Information System (INIS)

Fredericci, C.

2011-01-01

The crystallization of the Bi 2 O 3 -SiO 2 -TiO 2 -Al 2 O 3 -Na 2 O-K 2 O and Bi 2 O 3 -SiO 2 -ZnO-Al 2 O 3 -B 2 O 3 -Na 2 O glasses was studied using glass samples prepared by traditional melt-quench method. Differential thermal analysis (DTA) curves suggested that surface crystallization played a major role in the crystallization of the glass samples. X-ray diffraction (XRD) analysis revealed the crystallization of bismuth silicate for both glasses and bismuth silicate and zinc silicate for the glass containing ZnO. Through scanning electron microscopy (MEV) and energy dispersive spectroscopy (EDS), it was possible to observe that the crystals of zinc silicate (Zn 2 SiO 4 ) were readily attacked by hot 0,1 N sulfuric acid, whereas bismuth silicate crystals were more resistant to acidic attack etching. (author)

Composition and crystallization kinetics of R2O-Al2O3-SiO2 glass-ceramics

International Nuclear Information System (INIS)

Xiong, Dehua; Cheng, Jinshu; Li, Hong

2010-01-01

The crystallization behavior and microstructure of R 2 O-Al 2 O 3 -SiO 2 (R means K, Na and Li) glass were investigated by means of differential scanning calorimeter (DSC), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The crystallization kinetic parameters including the crystallization apparent activation energy (E a ), the Avrami parameter (n), glass transition temperature (T g ) and the activity energy of glass transition (E t ) were also measured with different methods. The results have shown that: the DSC traces of composition A parent glass have two different precipitation crystallization peaks corresponding to E a1 (A) = 151.4 kJ/mol (Li 2 SiO 3 ) and E a2 (A) = 623.1 kJ/mol (Li 2 Si 2 O 5 ), the average value of n = 1.70 (Li 2 Si 2 O 5 ) for the surface crystallization and E t (A) = 202.8 kJ/mol. And E a (B) = 50.7 kJ/mol (Li 2 SiO 3 ), the average value of n = 3.89 (Li 2 SiO 3 ) for the bulk crystallization and E t (B) = 220.4 kJ/mol for the composition B parent glass. Because of the content of R 2 O is bigger than composition A, composition B parent glass has a lower E a , T g and a larger n, E t .

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

Science.gov (United States)

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Inkjet printing of single-crystal films.

Science.gov (United States)

Minemawari, Hiromi; Yamada, Toshikazu; Matsui, Hiroyuki; Tsutsumi, Jun'ya; Haas, Simon; Chiba, Ryosuke; Kumai, Reiji; Hasegawa, Tatsuo

2011-07-13

The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science. Whether based on inorganic or organic materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. 'Printed electronics' is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials. However, because of the strong self-organizing tendency of the deposited materials, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid-air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C(8)-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm(2) V(-1) s(-1). This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Investigations of the energy and angular dependence of ultra-short radiation lengths in Si, Ge and W single crystals

CERN Multimedia

Very recently, experiments NA33 and WA81 have shown that pair production by energetic photons incident along crystalline directions is strongly enhanced as compared to the Bethe-Heitler value for amorphous targets. The enhanced pair production sets in at around 40 GeV in Ge crystals and rises almost linearly with photon energy up to a calculated maximum enhancement of around thirty. In Si, this maximum is expected to be nearly two orders of magnitude above the Bethe-Heitler value.\\\\ For GeV electrons/positrons incident along crystal axes, the radiation energy loss also shows a very large enhancement of approximately two orders of magnitude. In a 0.4 mm W crystal, a 100 GeV electron is expected to emit on average 70% of its total energy.\\\\ The combination of these two dramatic enhancements means that the electromagnetic shower develops much faster around crystalline directions, corresponding to ultrashort radiation lengths.\\\\ The aim of this experiment is to investigate the shower development in ...

Magnetic order of Nd5Pb3 single crystals

Science.gov (United States)

Yan, J.-Q.; Ochi, M.; Cao, H. B.; Saparov, B.; Cheng, J.-G.; Uwatoko, Y.; Arita, R.; Sales, B. C.; Mandrus, D. G.

2018-04-01

We report millimeter-sized Nd5Pb3 single crystals grown out of a Nd-Co flux. We experimentally study the magnetic order of Nd5Pb3 single crystals by measuring the anisotropic magnetic properties, electrical resistivity under high pressure up to 8 GPa, specific heat, and neutron single crystal diffraction. Two successive magnetic orders are observed at T N1  =  44 K and T N2  =  8 K. The magnetic cells can be described with a propagation vector k=(0.5, 0, 0) . Cooling below T N1, Nd1 and Nd3 order forming ferromagnetic stripes along the b-axis, and the ferromagnetic stripes are coupled antiferromagnetically along the a-axis for the k=(0.5, 0, 0) magnetic domain. Cooling below T N2, Nd2 orders antiferromagnetically to nearby Nd3 ions. All ordered moments align along the crystallographic c-axis. The magnetic order at T N1 is accompanied by a quick drop of electrical resistivity upon cooling and a lambda-type anomaly in the temperature dependence of specific heat. At T N2, no anomaly was observed in electrical resistivity but there is a weak feature in specific heat. The resistivity measurements under hydrostatic pressures up to 8 GPa suggest a possible phase transition around 6 GPa. Our first-principles band structure calculations show that Nd5Pb3 has the same electronic structure as does Y5Si3 which has been reported to be a one-dimensional electride with anionic electrons that do not belong to any atom. Our study suggests that R 5Pb3 (R  =  rare earth) can be a materials playground for the study of magnetic electrides. This deserves further study after experimental confirmation of the presence of anionic electrons.

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Magnetization study of a URhSi single crystal

Czech Academy of Sciences Publication Activity Database

Andreev, Alexander V.; Honda, F.; Sechovský, V.; Prokeš, K.

2003-01-01

Roč. 34, č. 2 (2003), s. 1437-1440 ISSN 0587-4254. [International Conference on Strongly Correlated Electron Systems (SCES 02). Cracow, 10.07.2002-13.07.2002] R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : URhSi * ferromagnetism * magnetic measurements Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.752, year: 2003

Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes

International Nuclear Information System (INIS)

Givargizov, E. I.

2006-01-01

The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy

Discovery of iron group impurity ion spin states in single crystal Y{sub 2}SiO{sub 5} with strong coupling to whispering gallery photons

Energy Technology Data Exchange (ETDEWEB)

Goryachev, Maxim; Farr, Warrick G.; Carmo Carvalho, Natalia do; Creedon, Daniel L.; Le Floch, Jean-Michel [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley WA 6009 (Australia); Probst, Sebastian [Physikalisches Institut, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany); Tobar, Michael E., E-mail: michael.tobar@uwa.edu.au [ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Western Australia, Crawley 6009 (Australia)

2015-06-08

Interaction of Whispering Gallery Modes (WGMs) with dilute spin ensembles in solids is an interesting paradigm of Hybrid Quantum Systems potentially beneficial for Quantum Signal Processing applications. Unexpected ion transitions are measured in single crystal Y{sub 2}SiO{sub 5} using WGM spectroscopy with large Zero Field Splittings at 14.7 GHz, 18.4 GHz, and 25.4 GHz, which also feature considerable anisotropy of the g-tensors as well as two inequivalent lattice sites, indicating spins from Iron Group Ion (IGI) impurities. The comparison of undoped and Rare-Earth doped crystals reveal that the IGIs are introduced during co-doping of Eu{sup 3+} or Er{sup 3+} with concentration at much lower levels of order 100 ppb. The strong coupling regime between an ensemble of IGI spins and WGM photons have been demonstrated at 18.4 GHz and near zero field. This approach together with useful optical properties of these ions opens avenues for “spins-in-solids” Quantum Electrodynamics.

Crystal structure and magnetic susceptibility of UOSe single crystals

International Nuclear Information System (INIS)

Kaczorowski, D.; Muenster Univ.; Poettgen, R.; Jeitschko, W.; Gajek, Z.; Zygmunt, A.

1993-01-01

The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T N =100±2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author)

Crystal structure and magnetic susceptibility of UOSe single crystals

Energy Technology Data Exchange (ETDEWEB)

Kaczorowski, D. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Poettgen, R.; Jeitschko, W. (Muenster Univ. (Germany). Anorganisch-Chemisches Inst.); Gajek, Z.; Zygmunt, A. (Polish Academy of Sciences, Wroclaw (Poland). Inst. for Low Temperature and Structure Research)

1993-01-01

The crystal structure and magnetic susceptibility behaviour of UOSe single crystals have been studied. UOSe crystalizes in the tetragonal PbFC1-type structure (space group P4/nmm) with the lattice parameters: a = 390.38(5) pm and c = 698.05(9) pm. It orders antiferromagnetically at T[sub N]=100[+-]2 K and exhibits a very strong anisotropy in the susceptibility vs temperature variation. The magnetic and thermodynamic properties of UOSe are successfully interpreted in the framework of a perturbative ab initio crystal field approach. (Author).

Crystallization and Martensitic Transformation Behavior of Ti-Ni-Si Alloy Ribbons Prepared via Melt Spinning.

Science.gov (United States)

Park, Ju-Wan; Kim, Yeon-Wook; Nam, Tae-Hyun

2018-09-01

Ti-(50-x)Ni-xSi (at%) (x = 0.5, 1.0, 3.0, 5.0) alloy ribbons were prepared via melt spinning and their crystallization procedure and transformation behavior were investigated using differential scanning calorimtry, X-ray diffraction, and transmission electron microscopy. Ti-Ni-Si alloy ribbons with Si content less than 1.0 at% were crystalline, whereas those with Si content more than 3.0 at% were amorphous. Crystallization occurred in the sequence of amorphous →B2 → B2 → Ti5Si4 + TiNi3 → B2 + Ti5Si4 + TiNi3 + TiSi in the Ti-47.0Ni-3.0Si alloy and amorphous →R → R + Ti5Si4 + TiNi3 → R + Ti5Si4 + TiNi3 + TiSi in the Ti-45.0Ni-5.0Si alloy. The activation energy for crystallization was 189 ±8.6 kJ/mol for the Ti-47Ni-3Si alloy and 212±8.6 kJ/mol for the Ti-45Ni-5Si alloy. One-stage B2-R transformation behavior was observed in Ti-49.5Ni-0.5Si, Ti-49.0Ni-1.0Si, and Ti-47.0Ni- 3.0Si alloy ribbons after heating to various temperatures in the range of 873 K to 1073 K. In the Ti-45.0Ni-5.0Si alloy, one-stage B2-R transformation occurred after heating to 893 K, two-stage B2-R-B19' occurred after heating to 973 K, and two-stage B2-R-B19' occurred on cooling and one-stage B19'-B2 occurred on heating, after heating to 1073 K.

Non-isothermal crystallization kinetic of poly(ethylene terephthalate)/fumed silica (PET/SiO2) prepared by in situ polymerization

International Nuclear Information System (INIS)

Antoniadis, G.; Paraskevopoulos, K.M.; Bikiaris, D.; Chrissafis, K.

2010-01-01

A number of poly(ethylene terephthalate) (PET) nanocomposites were prepared by in situ polymerization using different amounts (0.5, 1, 2, 3 and 4 wt%) of fumed silica (SiO 2 ). The polymerization of PET was carried out by the two-stage melt polycondensation method. From DSC studies it was found that the melting point of the nanocomposites was shifted slightly to higher temperatures by the addition of SiO 2 till 3 wt% while for PET-4 wt% SiO 2 nanocomposite the melting point was reduced. As the amount of SiO 2 was increased the crystallization became faster, and there was, also, a shifting of the temperature of the crystallization peak to higher values, this being evidence that SiO 2 can act as nucleating agent. At higher content (3 and 4 wt%) the temperature of the crystallization peak is lower than that of PET-2 wt% SiO 2 due to the formation of crosslinked macromolecules. The activation energy is calculated with the Friedman's method. PET/SiO 2 samples present lower activation energy compared to that of neat PET, except those of PET-4% SiO 2 , in which the activation energy have a maximum value for α = 0.8 probably due to the second crystallization peak. Extensive crystallization studies by using Avrami, Ozawa and Malek methods verified that PET and its nanocomposites must be crystallized by two mechanisms with different activation energies taking place in different degrees of crystallization.

Creep Properties of NiAl-1Hf Single Crystals Re-Investigated

Science.gov (United States)

Whittenberger, J. Daniel; Locci, Ivan E.; Darolia, Ram; Bowman, Randy R.

2000-01-01

NiAl-1Hf single crystals have been shown to be quite strong at 1027 C, with strength levels approaching those of advanced Ni-based superalloys. Initial testing, however, indicated that the properties might not be reproducible. Study of the 1027 C creep behavior of four different NiAl-1Hf single-crystal ingots subjected to several different heat treatments indicated that strength lies in a narrow band. Thus, we concluded that the mechanical properties are reproducible. Recent investigations of the intermetallic NiAl have confirmed that minor alloying additions combined with single-crystal growth technology can produce elevated temperature strength levels approaching those of Ni-based superalloys. For example, General Electric alloy AFN 12 {Ni-48.5(at.%) Al-0.5Hf-1Ti-0.05Ga} has a creep rupture strength equivalent to Rene 80 combined with a approximately 30-percent lower density, a fourfold improvement in thermal conductivity, and the ability to form a self-protective alumina scale in aggressive environments. Although the compositions of strong NiAl single crystals are relatively simple, the microstructures are complex and vary with the heat treatment and with small ingot-toingot variations in the alloy chemistry. In addition, initial testing suggested a strong dependence between microstructure and creep strength. If these observations were true, the ability to utilize NiAl single-crystal rotating components in turbine machinery could be severely limited. To investigate the possible limitations in the creep response of high-strength NiAl single crystals, the NASA Glenn Research Center at Lewis Field initiated an in depth investigation of the effect of heat treatment on the microstructure and subsequent 1027 C creep behavior of [001]-oriented NiAl-1Hf with a nominal chemistry of Ni-47.5Al-1Hf-0.5Si. This alloy was selected since four ingots, grown over a number of years and possessing slightly different compositions, were available for study. Specimens taken from the

Methods for growth of relatively large step-free SiC crystal surfaces

Science.gov (United States)

Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

2002-01-01

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Crystal growth and optical properties of Gd admixed Ce-doped Lu.sub.2./sub.Si.sub.2./sub.O.sub.7./sub. single crystals

Czech Academy of Sciences Publication Activity Database

Horiai, T.; Kurosawa, S.; Murakami, R.; Yamaji, A.; Shoji, Y.; Ohashi, Y.; Pejchal, Jan; Kamada, K.; Yokota, Y.; Yoshikawa, A.

2017-01-01

Roč. 468, Jun (2017), s. 391-394 ISSN 0022-0248 Grant - others:AV ČR(CZ) JSPS-17-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : growth from melt * seed crystals * single crystal growth * oxides * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Distributed Feedback Laser Based on Single Crystal Perovskite

Science.gov (United States)

Sun, Shang; Xiao, Shumin; Song, Qinghai

2017-06-01

We demonstrate a single crystal perovskite based, with grating-structured photoresist on top, highly polarized distributed feedback laser. A lower laser threshold than the Fabry-Perot mode lasers from the same single crystal CH3NH3PbBr3 microplate was obtained. Single crystal CH3NH3PbBr3 microplates was synthesized with one-step solution processed precipitation method. Once the photoresist on top of the microplate was patterned with electron beam, the device was realized. This one-step fabrication process utilized the advantage of single crystal to the greatest extend. The ultra-low defect density in single crystalline microplate offer an opportunity for lower threshold lasing action compare with poly-crystal perovskite films. In the experiment, the lasing action based on the distributed feedback grating design was found with lower threshold and higher intensity than the Fabry-Perot mode lasers supported by the flat facets of the same microplate.

Quasi-periodic photonic crystal Fabry–Perot optical filter based on Si/SiO2 for visible-laser spectral selectivity

Science.gov (United States)

Qi, Dong; Wang, Xian; Cheng, Yongzhi; Chen, Fu; Liu, Lei; Gong, Rongzhou

2018-06-01

We report on a 1D quasi-periodic photonic crystal Fabry–Perot optical filter Cs(Si/SiO2)3(SiO2/Si)3 for spectral selectivity of visible light and 1.55 µm laser. A material transparency interval of 1.03–2.06 µm makes Si a unique choice of high refractive index material. Owing to the CIE 1931 standard and equal inclination interference, the designed structure can be successfully fabricated with a certain color (brown, khaki, or blue) corresponding to the different Cs physical thickness d and response R(λ). In addition, the peak transmittance T max of the proposed structure can reach as high as 92.56% (Cs  =  20 nm), 90.83% (Cs  =  40 nm), and 88.85% (Cs  =  60 nm) with a relatively narrow full width at half maximum of 4.4, 4.6, and 4.8 nm at 1.55 µm. The as-prepared structure indicates that it is feasible for a photonic crystal Fabry–Perot optical filter to achieve visible-laser (1.55 µm) spectral selectivity.

Timing characteristics of Ce doped Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12} single crystals in comparison with CsI(Tl) scintillators

Energy Technology Data Exchange (ETDEWEB)

Tyagi, M.; Singh, A.K.; Singh, S.G.; Sen, S.; Gadkari, S.C. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Desai, V.V.; Nayak, B.K. [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India)

2015-10-15

Single crystals of Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12}:Ce with B codopants were successfully grown using the Czochralski technique. The timing characteristics of the crystal was measured by coupling the crystal to photomultiplier tubes (PMT) or silicon photodiodes [Si(PIN)]. The two prompt γ-rays emitted in a cascade from {sup 60}Co or {sup 22}Na source were detected in coincidence using Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12}:Ce,B crystal detectors and a BaF{sub 2} detector. The time resolution of these crystals are observed to be better than that measured for CsI:Tl crystal coupled to PMT or Si(PIN) in an identical measurement setup. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba8-ySryAl14Si32 (0.6≤y≤1.3) prepared by aluminum flux

International Nuclear Information System (INIS)

Roudebush, John H.; Toberer, Eric S.; Hope, Hakon; Jeffrey Snyder, G.; Kauzlarich, Susan M.

2011-01-01

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3-bar n. Electron microprobe characterization indicates the composition to be Ba 8-y Sr y Al 14.2(2) Si 31.8(2) (0.77 1 =0.0233, wR 2 =0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered. -- Graphical abstract: The inorganic type-I clathrate phase with nominal composition Ba 7 Sr 1 Al 14 Si 32 has been prepared by Al flux. Single crystal diffraction at 90 and 12 K reveal that the framework is fully occupied with the cation sites nearly fully occupied. The lattice thermal conductivity is low thereby suggesting further optimization of the carrier concentration will lead to a high zT. Display Omitted Highlights: → Ba 7 Sr 1 Al 14 Si 32 is a light element phase ideal for thermoelectric power generation. → Ba 7 Sr 1 Al 14 Si 32 is a high melting point cubic structure ideal for efficient power generation. → The framework is fully occupied with the cation sites nearly fully occupied. → Further optimization of the carrier concentration is expected to lead to a high zT.

Study of Non-Isothermal Crystallization Kinetics of Biodegradable Poly(ethylene adipate/SiO2 Nanocomposites

Directory of Open Access Journals (Sweden)

M. R. Memarzadeh

2013-09-01

Full Text Available Poly(ethylene adipte and poly(ethylene adipate/silica nanocomposite (PEAd/SiO2 containing 3 wt. % SiO2  were prepared by an in situ method. The examinations on the non-isothermal crystallization kinetic behavior have been conducted by means of differential scanning calorimeter (DSC. The Avrami, Ozawa, and combined Avrami and Ozawa equations were applied to describe the crystallization kinetics and to determine the crystallization parameters of the prepared PEAd/SiO2 nanocomposites. It is found that the inclusion of the silica nanoparticles can accelerate the nucleation rate due to heterogeneous nucleation effect of silica on the polymer matrix. According to the obtained results, the combined Avrami and Ozawa equation shown that the better model for examination of this system.

Growth and surface topography of WSe_2 single crystal

International Nuclear Information System (INIS)

Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2016-01-01

Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

International Nuclear Information System (INIS)

Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

2006-01-01

The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

Science.gov (United States)

Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

First observations of stimulated emission and of stimulated Raman scattering in acentric cubic Nd3+:Bi12SiO20 crystals

International Nuclear Information System (INIS)

Kaminskii, Alexandr A; Bagayev, S N; Garsia, Sole J; Jaque, D; Eichler, H J; Findeisen, J; Fernandez, J; Balda, R; Agullo, Rueda F

1999-01-01

Laser action (in the 4 F 3/2 - 4 I 11/2 channel) and stimulated Raman scattering were excited for the first time in an Nd 3+ :Bi 12 SiO 20 single crystal at room temperature. All the observed stimulated emission and multiple Stokes and anti-Stokes lines were identified. (letters to the editor)

Crystallization kinetics of bioactive glasses in the ZnO-Na2O-CaO-SiO2 system.

Science.gov (United States)

Malavasi, Gianluca; Lusvardi, Gigliola; Pedone, Alfonso; Menziani, Maria Cristina; Dappiaggi, Monica; Gualtieri, Alessandro; Menabue, Ledi

2007-08-30

The crystallization kinetics of Na(2)O.CaO.2SiO(2) (x = 0) and 0.68ZnO.Na(2)O.CaO.2SiO(2) (x = 0.68, where x is the ZnO stoichiometric coefficient in the glass formula) bioactive glasses have been studied using both nonisothermal and isothermal methods. The results obtained from isothermal XRPD analyses have showed that the first glass crystallizes into the isochemical Na(2)CaSi(2)O(6) phase, whereas the Na(2)ZnSiO(4) crystalline phase is obtained from the Zn-rich glass, in addition to Na(2)CaSi(2)O(6). The activation energy (Ea) for the crystallization of the Na(2)O.CaO.2SiO(2) glass is 193 +/- 10 and 203 +/- 5 kJ/mol from the isothermal in situ XRPD and nonisothermal DSC experiments, respectively. The Avrami exponent n determined from the isothermal method is 1 at low temperature (530 degrees C), and its value increases linearly with temperature increase up to 2 at 607 degrees C. For the crystallization of Na(2)CaSi(2)O(6) from the Zn-containing glass, higher values of both the crystallization temperature (667 and 661 degrees C) and Ea (223 +/- 10 and 211 +/- 5 kJ/mol) have been found from the isothermal and nonisothermal methods, respectively. The Na(2)ZnSiO(4) crystalline phase crystallizes at lower temperature with respect to Na(2)CaSi(2)O(6), and the Ea value is 266 +/- 20 and 245 +/- 15 kJ/mol from the isothermal and nonisothermal methods, respectively. The results of this work show that the addition of Zn favors the crystallization from the glass at lower temperature with respect to the Zn-free glass. In fact, it causes an increase of Ea for the Na diffusion process, determined using MD simulations, and consequently an overall increase of Ea for the crystallization process of Na(2)CaSi(2)O(6). Our results show good agreement between the Ea and n values obtained with the two different methods and confirm the reliability of the nonisothermal method applied to kinetic crystallization of glassy systems. This study allows the determination of the temperature

First investigations on the quaternary system Na2O-K2O-CaO-SiO2: synthesis and crystal structure of the mixed alkali calcium silicate K1.08Na0.92Ca6Si4O15

Science.gov (United States)

Kahlenberg, Volker; Mayerl, Michael Jean-Philippe; Schmidmair, Daniela; Krüger, Hannes; Tribus, Martina

2018-04-01

In the course of an exploratory study on the quaternary system Na2O-K2O-CaO-SiO2 single crystals of the first anhydrous sodium potassium calcium silicate have been obtained from slow cooling of a melt in the range between 1250 and 1050 °C. Electron probe micro analysis suggested the following idealized molar ratios of the oxides for the novel compound: K2O:Na2O:CaO:SiO2 = 1:1:12:8 (or KNaCa6Si4O15). Single-crystal diffraction measurements on a crystal with chemical composition K1.08Na0.92Ca6Si4O15 resulted in the following basic crystallographic data: monoclinic symmetry, space group P 21/ c, a = 8.9618(9) Å, b = 7.3594(6) Å, c = 11.2453(11) Å, β= 107.54(1)°, V = 707.2(1) Å3, Z = 2. Structure solution was performed using direct methods. The final least-squares refinement converged at a residual of R(|F|) = 0.0346 for 1288 independent reflections and 125 parameters. From a structural point of view, K1.08Na0.92Ca6Si4O15 belongs to the group of mixed-anion silicates containing [Si2O7]- and [SiO4]-units in the ratio 1:2. The mono- and divalent cations occupy a total of four crystallographically independent positions located in voids between the tetrahedra. Three of these sites are exclusively occupied by calcium. The fourth site is occupied by 54(1)% K and 46%(1) Na, respectively. Alternatively, the structure can be described as a heteropolyhedral framework based on corner-sharing silicate tetrahedra and [CaO6]-octahedra. The network can build up from kröhnkite-like [Ca(SiO4)2O2]-chains running along [001]. A detailed comparison with other A2B6Si4O15-compounds including topological and group-theoretical aspects is presented.

Growth, optical and EPR studies of {sup 151}Eu{sup 2+}:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Petrosyan, A.G., E-mail: pet@ipr.sci.am [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Asatryan, H.R. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Hovhannesyan, K.L.; Derdzyan, M.V. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia); Feofilov, S.P. [Ioffe Physical-Technical Institute, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation); Eganyan, A.V.; Sargsyan, R.S. [Institute for Physical Research, National Academy of Sciences, Ashtarak, 0203 (Armenia)

2017-01-01

Single crystals of {sup 151}Eu:YAG were grown by the vertical Bridgman method using Eu{sub 2}O{sub 3} with isotopic enrichment of {sup 151}Eu of 97.5%. Additional Hf{sup 4+}or Si{sup 4+} ions were introduced to favor a high concentrations of Eu{sup 2+}. As compared to Eu:YAG with natural isotope composition, the EPR spectra of YAG doped with {sup 151}Eu isotope show a reduced number of hyperfine structure components and a well-resolved structure of a bigger number of electronic transitions. Optical properties of obtained crystals and the effects of heat treatments under oxidizing and reducing conditions are reported. Based on the analysis of Eu{sup 3+} distribution in oxidized Eu,Hf:YAG, in comparison to that in Eu:YAG, the concentration of Eu{sup 2+} in as-grown Eu,Hf:YAG is determined. - Highlights: • YAG:Eu,Hf single crystals containing only {sup 151}Eu isotopes were prepared. • isotopic enriched crystals gave a well-resolved EPR hyperfine structure of Eu{sup 2+} centers. • the redox ratio was followed through the Eu{sup 2+} associated absorption band at 250 nm. • the band intensities at 378 nm correlate with the Eu{sup 2+} concentration.

Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

International Nuclear Information System (INIS)

Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

1979-01-01

Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

Production and several properties of single crystal austenitic stainless steels

International Nuclear Information System (INIS)

Okamoto, Kazutaka; Yoshinari, Akira; Kaneda, Junya; Aono, Yasuhisa; Kato, Takahiko

1998-01-01

The single crystal austenitic stainless steels Type 316L and 304L were grown in order to improve the resistance to stress corrosion cracking (SCC) using a unidirectional solidification method which can provide the large size single crystals. The mechanical properties and the chemical properties were examined. The orientation and temperature dependence of tensile properties of the single crystals were measured. The yield stress of the single crystal steels are lower than those of the conventional polycrystal steels because of the grain boundary strength cannot be expected in the single crystal steels. The tensile properties of the single crystal austenitic stainless steel Type 316L depend strongly on the orientation. The tensile strength in orientation are about 200 MPa higher than those in the and orientations. The microstructure of the single crystal consists of a mixture of the continuous γ-austenitic single crystal matrix and the δ-ferrite phase so that the effects of the γ/δ boundaries on the chemical properties were studied. The effects of the δ-ferrite phases and the γ/δ boundaries on the resistance to SCC were examined by the creviced bent beam test (CBB test). No crack is observed in all the CBB test specimens of the single crystals, even at the γ/δ boundaries. The behavior of the radiation induced segregation (RIS) at the γ/δ boundaries in the single crystal austenitic stainless steel Type 316L was evaluated by the electron irradiation test in the high voltage electron microscope (HVEM). The depletion of oversized solute chromium at the γ/δ boundary in the single crystal austenitic stainless steel Type 316L is remarkably lower than that at the grain boundary in the polycrystalline-type 316L. (author)

Crystallization kinetics of BaO-Al2O3-SiO2 glasses

Science.gov (United States)

Bansal, Narottam P.; Hyatt, Mark J.

1989-01-01

Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

The ion capturing effect of 5° SiOx alignment films in liquid crystal devices

Science.gov (United States)

Huang, Yi; Bos, Philip J.; Bhowmik, Achintya

2010-09-01

We show that SiOx, deposited at 5° to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5° SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/μm2. These types of materials are useful for new types of very low power liquid crystal devices such as e-books.

Moessbauer and channeling experiments on TeSi and SmSi

International Nuclear Information System (INIS)

Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

1980-01-01

Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Organic field-effect transistors using single crystals

International Nuclear Information System (INIS)

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

Prospects for the synthesis of large single-crystal diamonds

International Nuclear Information System (INIS)

Khmelnitskiy, R A

2015-01-01

The unique properties of diamond have stimulated the study of and search for its applications in many fields, including optics, optoelectronics, electronics, biology, and electrochemistry. Whereas chemical vapor deposition allows the growth of polycrystalline diamond plates more than 200 mm in diameter, most current diamond application technologies require large-size (25 mm and more) single-crystal diamond substrates or films suitable for the photolithography process. This is quite a challenge, because the largest diamond crystals currently available are 10 mm or less in size. This review examines three promising approaches to fabricating large-size diamond single crystals: growing large-size single crystals, the deposition of heteroepitaxial diamond films on single-crystal substrates, and the preparation of composite diamond substrates. (reviews of topical problems)

Growth of Ga2O3 single crystal

OpenAIRE

龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki

2010-01-01

Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...

Electron excitations in BeAl2O4, Be2SiO4 and Be3Al2Si6O18 crystals

International Nuclear Information System (INIS)

Ivanov, V.Yu.; Pustovarov, V.A.; Shlygin, E.S.; Korotaev, A.V.; Kruzhalov, A.V.

2005-01-01

Low-temperature (T = 7 K) time-resolved selectively photoexcited luminescence spectra (2-6 eV) and luminescence excitation spectra (8-35 eV) of wide-bandgap chrysoberyl BeAl 2 O 4 , phenacite Be 2 SiO 4 , and beryl Be 3 Al 2 Si 6 O 18 crystals have been studied using time-resolved VUV spectroscopy. Both the intrinsic luminescence of the crystals and the luminescence associated with structural defects were assigned. Energy transfer to impurity luminescence centers in alexandrite and emerald was investigated. Luminescence characteristics of stable crystal lattice defects were probed by 3.6-MeV accelerated helium ion beams [ru

Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals

International Nuclear Information System (INIS)

Pagava, T. A.

2006-01-01

The n-Si single crystals are studied in order to gain insight into the effect of the temperature of irradiation T irr on the defect-production process. The samples under study were irradiated with 2-MeV electrons in the range T irr = 20-400 deg. C. Irradiated crystals were annealed isochronously in the temperature range from 80 to 600 deg. C. Measurements were carried out by the Hall method in the temperature range from 77 to 300 K. It is shown that the efficiency of introduction of radiation defects with a high thermal stability (T ann ≥ 350 deg. C) attains a maximum at T irr = 150 deg. C. The observed effect is accounted for by formation of multivacancy defects PV 2 on the basis of ionized E centers and nonequilibrium vacancies

Thermal diffusion boron doping of single-crystal natural diamond

Energy Technology Data Exchange (ETDEWEB)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2016-05-28

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Thermal diffusion boron doping of single-crystal natural diamond

International Nuclear Information System (INIS)

Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

2016-01-01

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

Investigation of pyroelectric electron emission from monodomain lithium niobate single crystals

International Nuclear Information System (INIS)

Bourim, El Mostafa; Moon, Chang-Wook; Lee, Seung-Woon; Kyeong Yoo, In

2006-01-01

The behaviors of thermally stimulated electron emission from pyroelectric monodomain lithium niobate single crystal (LiNbO 3 ) were investigated by utilizing a Si p-n junction photodiode as electron detector and a receptive electron beam resist (E-beam resist) as electron collector. In high vacuum (10 -6 Torr), the pyroelectric electron emission (PEE) was found to depend on the exposed emitting polar crystal surface (+Z face or -Z face) and was significantly influenced by the emitter-electron receiver gap distances. Thus, the PEE from +Z face was detected during heating and was activated, in small gaps ( 2 mm) the emission was simply mastered by field emission effect. Whereas, The PEE from -Z face was detected during cooling and was solely due to the field ionization effect. Therewith, for small gaps ( 2 mm) PEE was governed by field ionization generating a soft and continuous plasma ambient atmosphere. Significant decrease of electron emission current was observed from +Z face after successive thermal cycles. A fast and fully emission recovery was established after a brief exposure of crystal to a poor air vacuum of 10 -1 Torr

Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

Energy Technology Data Exchange (ETDEWEB)

Lv, Yang-Yang; Zhang, Bin-Bin; Yao, Shu-Hua, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhou, Jian, E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn; Zhang, Shan-Tao; Lu, Ming-Hui [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Li, Xiao; Chen, Y. B., E-mail: shyao@nju.edu.cn, E-mail: ybchen@nju.edu.cn, E-mail: zhoujian@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chen, Yan-Feng [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Microstructure, Nanjing University, Nanjing 210093 (China)

2016-06-13

Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe{sub 2}, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 10{sup 4}% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (∼1.4 × 10{sup 4}%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.

High-quality bulk hybrid perovskite single crystals within minutes by inverse temperature crystallization

KAUST Repository

Saidaminov, Makhsud I.

2015-07-06

Single crystals of methylammonium lead trihalide perovskites (MAPbX3; MA=CH3NH3+, X=Br− or I−) have shown remarkably low trap density and charge transport properties; however, growth of such high-quality semiconductors is a time-consuming process. Here we present a rapid crystal growth process to obtain MAPbX3 single crystals, an order of magnitude faster than previous reports. The process is based on our observation of the substantial decrease of MAPbX3 solubility, in certain solvents, at elevated temperatures. The crystals can be both size- and shape-controlled by manipulating the different crystallization parameters. Despite the rapidity of the method, the grown crystals exhibit transport properties and trap densities comparable to the highest quality MAPbX3 reported to date. The phenomenon of inverse or retrograde solubility and its correlated inverse temperature crystallization strategy present a major step forward for advancing the field on perovskite crystallization.

Attenuation of thermal neutrons by an imperfect single crystal

Energy Technology Data Exchange (ETDEWEB)

Naguib, K.; Adib, M. [National Research Centre, Cairo (Egypt). Reactor and Neutron Physics Dept.

1996-06-14

A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3-40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range. (author).

Attenuation of thermal neutrons by an imperfect single crystal

Science.gov (United States)

Naguib, K.; Adib, M.

1996-06-01

A semi-empirical formula is given which allows one to calculate the total thermal cross section of an imperfect single crystal as a function of crystal constants, temperature and neutron energy E, in the energy range between 3 meV and 10 eV. The formula also includes the contribution of the parasitic Bragg scattering to the total cross section that takes into account the crystal mosaic spread value and its orientation with respect to the neutron beam direction. A computer program (ISCANF) was developed to calculate the total attenuation of neutrons using the proposed formula. The ISCANF program was applied to investigate the neutron attenuation through a copper single crystal. The calculated values of the neutron transmission through the imperfect copper single crystal were fitted to the measured ones in the energy range 3 - 40 meV at different crystal orientations. The result of fitting shows that use of the computer program ISCANF allows one to predict the behaviour of the total cross section of an imperfect copper single crystal for the whole energy range.

Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD

Directory of Open Access Journals (Sweden)

M. Maleki

2015-12-01

Full Text Available In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500◦C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

How far could energy transport within a single crystal

Science.gov (United States)

Zhang, Yifan; Che, Yanke; Zhao, Jincai; Steve, Granick

Efficient transport of excitation energy over long distance is a vital process in light-harvesting systems and molecular electronics. The energy transfer distance is largely restricted by the probability decay of the exciton when hopping within a single crystal. Here, we fabricated an organic single crystal within which the energy could transfer more than 100 μm, a distance only limited by its crystal size. Our system could be regarded as a ``Sprint relay game'' performing on different surface of tracks. Photoinduced ``athletes'' (excitons) triggered intermolecular ``domino'' reaction to propagate energy for a long distance. In addition, athletes with the same ability runs much farther on smooth ideal track (single crystal assembled from merely van der Waals interaction) than bumpy mud track (crystal assembled from combination of pi-stacking, hydrogen bond and van der Waals interactions). Our finding presents new physics on enhancing energy transfer length within a single crystal. Current Affiliation: Institute for Basic Science, South Korea.

Laser direct-write and crystallization of FeSi II micro-dot array for NIR light-emitting device application

Science.gov (United States)

Narazaki, Aiko; Kurosaki, Ryozo; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki

2007-02-01

We printed FeSi II micro-dot array on various kinds of substrates utilizing laser-induced forward transfer (LIFT). An amorphous FeSi II was deposited by sputtering on a transparent plate as a source film. A single KrF excimer laser pulse through a mask-projection system was imaged with a small micrometer-sized grid pattern onto a film/plate interface, resulting in the deposition of FeSi II micro-dot array on a facing substrate with a high number density of 10 4 mm -2. FeSi II in the β crystalline phase is a promising eco-friendly semiconductor because of NIR electroluminescence used for optical networking as well as abundant components reserve on the earth and non-toxicity. However, the β-FeSi II film fabrication generally required high-temperature multi-processes which hamper its integration and performance reproducibility. Using the LIFT of micro-dot array, we succeeded in room-temperature preparation of β-FeSi II. Micro-Raman spectroscopy confirmed the β crystalline phase in the micro-dots deposited on an unheated silica glass substrate. Thus, the LIFT is useful for integrating functional micro-dot array accompanied by the crystallization at lower temperatures.

Tuning of Hidden Order and Superconductivity in URu2Si2 by Applied Pressure and Re Substitution

International Nuclear Information System (INIS)

Nicholas P. Butch; Jason R. Jeffries; Benjamin T. Yukich; M. Brian Maple

2006-01-01

Single crystals of URu2-xRexSi2 have been grown via the Czochralski technique. Detailed electrical transport studies under pressure on single crystals of URu2Si2 confirm that the zero- temperature critical field is suppressed smoothly towards an extrapolated critical pressure of 15 kbar, which also corresponds to the accepted critical pressure of the hidden order phase. Improving on previous work on polycrystalline samples, studies of single crystals of URu2-xRexSi2 have provided more precise tracking of the suppression of both the hidden order phase at low doping and the ferromagnetic phase at intermediate Re concentrations

Structural variations and dielectric properties of (Bi1-xL ax ) 2Si O5 (0 ≤x ≤0.1 ): Polycrystallines synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses

Science.gov (United States)

Taniguchi, Hiroki; Tatewaki, Shingo; Yasui, Shintaro; Fujii, Yasuhiro; Yamaura, Jun-ichi; Terasaki, Ichiro

2018-04-01

This paper focuses on effects of isovalent La substitution on the crystal structure and dielectric properties of ferroelectric B i2Si O5 . Polycrystalline samples of (Bi1-xL ax ) 2Si O5 are synthesized by crystallization of Bi-Si-O and Bi-La-Si-O glasses with a composition range of 0 ≤x ≤0.1 . The crystal structure changes from monoclinic to tetragonal with increasing La-substitution rate x at room temperature. This structural variation stems from the change in orientation of Si O4 tetrahedra that form one-dimensional chains when they are in the ordered configuration, thus suggesting that lone-pair electrons play an important role in sustaining one-dimensional chains of Si O4 tetrahedra. Synchronizing with the disordering of Si O4 chains, ferroelectric phase transition temperature of (Bi1-xL ax ) 2Si O5 sharply decreases as x increases, and ferroelectricity finally vanishes at around x =0.03 . The present results demonstrate that lone-pair electrons of Bi play an important role in the ferroelectricity of B i2Si O5 through propping the ordered structure of one-dimensional Si O4 chains with stereochemical activity. Furthermore, an additional phase transition has been first discovered in the low-temperature region of (Bi1-xL ax ) 2Si O5 with x ≤0.01 , where the ordered one-dimensional Si O4 chains remain.

Role of crystal orientation on chemical mechanical polishing of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Zhu, Aibin, E-mail: abzhu@mail.xjtu.edu.cn; He, Dayong; Luo, Wencheng; Liu, Yangyang

2016-11-15

Highlights: • The role of crystal orientation in cooper CMP by quasi-continuum was studied. • The atom displacement diagrams were obtained and analyzed. • The stress distribution diagrams and load-displacement curves were analyzed. • This research is helpful to revealing the material removal mechanism of CMP. - Abstract: The material removal mechanism of single crystal copper in chemical mechanical polishing (CMP) has not been intensively investigated. And the role of crystal orientation in CMP of single crystal cooper is not quite clear yet. Quasi-continuum method was adopted in this paper to simulate the process of nano-particles grinding on single crystal copper in CMP process. Three different crystal orientations, i.e. x[100]y[001], x[001]y[110] and x[–211]y[111], were chosen for analysis. The atom displacement diagrams, stress distribution diagrams and load-displacement curves were obtained. After analyzing the deformation mechanism, residual stress of the work piece material and cutting force, results showed that, the crystal orientation of work piece has great influence on the deformation characteristics and surface quality of work piece during polishing. In the A(001)[100] orientation, the residual stress distribution after polishing is deeper, and the stress is larger than that in the B(110)[001] and C(111)[–211] orientations. And the average tangential cutting force in the A(001)[100] orientation is much larger than those in the other two crystal orientation. This research is helpful to revealing the material removal mechanism of CMP process.

Magnetostriction of a U.sub.2./sub.Fe.sub.13./sub.Si.sub.4./sub. single crystal

Czech Academy of Sciences Publication Activity Database

Andreev, Alexander V.; Tereshina, Evgeniya; Prokleška, J.

2010-01-01

Roč. 491, 1-2 (2010), s. 4-7 ISSN 0925-8388 R&D Projects: GA ČR GA202/09/0339 Institutional research plan: CEZ:AV0Z10100520 Keywords : uranium intermetallics * single crystals * ferromagnetism * magnetostriction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.138, year: 2010

Hidden order and disorder effects in URu2Si2

Science.gov (United States)

Bernal, O. O.; Moroz, M. E.; Ishida, K.; Murakawa, H.; Reyes, A. P.; Kuhns, P. L.; MacLaughlin, D. E.; Mydosh, J. A.; Gortenmulder, T. J.

2006-05-01

NMR experiments at ambient pressure in URu 2Si 2 demonstrate a linewidth enhancement effect below the hidden order transition temperature T0. We present single-crystal 29Si NMR parameters for various temperatures and for an applied magnetic field perpendicular to the crystal c-axis. By comparing oriented-powder and single-crystal data, we observe that the size of the linewidth enhancement below T0 correlates with the size of the high- T broadening. We measure a 29Si up-field line shift below T0 which indicates the presence of an internal-field average for the entire crystal. This shift also correlates with the high-temperature width. The 101Ru NQR frequency as a function of temperature was also measured. No strong effect on the NQR frequency is observed at T0. Both NMR and NQR measurements suggest a connection between linewidth/disorder effects and the transition to hidden order.

Organic field-effect transistors using single crystals

Directory of Open Access Journals (Sweden)

Tatsuo Hasegawa and Jun Takeya

2009-01-01

Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

Crystal ball single event display

International Nuclear Information System (INIS)

Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL

1997-01-01

The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer

Tensile properties of electron-beam-welded single crystals of molybdenum

International Nuclear Information System (INIS)

Hiraoka, Yutaka; Okada, Masatoshi; Irie, Hirosada; Fujii, Tadayuki.

1987-01-01

The purpose of this study is to investigate the macro- and microstructures and the tensile properties of electron-beam-welded single crystals of molybdenum. The single-crystal sheets were prepared by means of secondary recrystallization. The welding was carried out by a melt-run technique. The weld metal had the same crystallographic orientation as the base metal, and no grain boundary was observed. However, many large weld pores were formed mostly along the weld bond. The strength and ductility of the welded joints of single crystals were almost the same as those of the base metal (''annealed'' single crystals). It is concluded that the joint efficiency of molybdenum single crystals at room temperature or above was excellent and nearly 100 %. (author)

Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

Science.gov (United States)

Yang, Zhen

Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

Electroerosion impulse effect on W single crystal structure

International Nuclear Information System (INIS)

Aleshina, S.A.; Khvostikova, V.D.; Zolotykh, B.N.; Marchuk, A.I.

1977-01-01

The mechanism has been studied of brittle failure of single crystal tungsten on planes of crystallographic orientations [100], [110]; [111] in the process of electro-erosion machining by pulses of energies ranging from 1200 to 5000 μJ and of duration of 1 μs. It is shown that the electro-erosion machining of single crystal tungsten is characterized by the formation of a defect layer with a grid of microcracks which lie at a depth of approximately 80 μm. The appearance and the distribution of cracks on the surface of single crystals depends on the crystallogrpahic orientation

Roymillerite, Pb24Mg9(Si9AlO28)(SiO4)(BO3)(CO3)10(OH)14O4, a new mineral: mineralogical characterization and crystal chemistry

Science.gov (United States)

Chukanov, Nikita V.; Jonsson, Erik; Aksenov, Sergey M.; Britvin, Sergey N.; Rastsvetaeva, Ramiza K.; Belakovskiy, Dmitriy I.; Van, Konstantin V.

2017-11-01

The new mineral roymillerite Pb24Mg9(Si9AlO28)(SiO4)(BO3)(CO3)10(OH)14O4, related to britvinite and molybdophyllite, was discovered in a Pb-rich assemblage from the Kombat Mine, Grootfontein district, Otjozondjupa region, Namibia, which includes also jacobsite, cerussite, hausmannite, sahlinite, rhodochrosite, barite, grootfonteinite, Mn-Fe oxides, and melanotekite. Roymillerite forms platy single-crystal grains up to 1.5 mm across and up to 0.3 mm thick. The new mineral is transparent, colorless to light pink, with a strong vitreous lustre. Cleavage is perfect on (001). Density calculated using the empirical formula is equal to 5.973 g/cm3. Roymillerite is optically biaxial, negative, α = 1.86(1), β ≈ γ = 1.94(1), 2 V (meas.) = 5(5)°. The IR spectrum shows the presence of britvinite-type tetrahedral sheets, {CO}3^{2 - }, {BO}3^{3 - }, and OH- groups. The chemical composition is (wt%; electron microprobe, H2O and CO2 determined by gas chromatography, the content of B2O3 derived from structural data): MgO 4.93, MnO 1.24, FeO 0.95, PbO 75.38, B2O3 0.50, Al2O3 0.74, CO2 5.83, SiO2 7.90, H2O 1.8, total 99.27. The empirical formula based on 83 O atoms pfu (i.e. Z = 1) is Pb24.12Mg8.74Mn1.25Fe0.94B1.03Al1.04C9.46Si9.39H14.27O83. The crystal structure was determined using single-crystal X-ray diffraction data. The new mineral is triclinic, space group P \\bar{1}, with a = 9.315(1), b = 9.316(1), c = 26.463(4) Å, α = 83.295(3)°, β = 83.308(3)°, γ = 60.023(2)°, V = 1971.2(6) Å3. The crystal structure of roymillerite is based built by alternating pyrophyllite-type TOT-modules Mg9(OH)8[(Si,Al)10O28] and I-blocks Pb24(OH)6O4(CO3)10(BO3,SiO4). The strongest lines of the powder X-ray diffraction pattern [ d, Å (I, %) ( hkl)] are: 25.9 (100) (001), 13.1 (11) (002), 3.480 (12) (017, 107, -115, 1-15), 3.378 (14) (126, 216), 3.282 (16) (-2-15, -1-25), 3.185 (12) (-116, 1-16), 2.684 (16) (031, 301, 030, 300, 332, -109, 0-19, 1-18), 2.382 (11) (0.0.-11). Roymillerite is

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

Science.gov (United States)

Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

2017-08-17

We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

Nanomechanical resonant structures in single-crystal diamond

OpenAIRE

Burek, Michael J.; Ramos, Daniel; Patel, Parth; Frank, Ian W.; Lončar, Marko

2013-01-01

With its host of outstanding material properties, single-crystal diamond is an attractive material for nanomechanical systems. Here, the mechanical resonance characteristics of freestanding, single-crystal diamond nanobeams fabricated by an angled-etching methodology are reported. Resonance frequencies displayed evidence of significant compressive stress in doubly clamped diamond nanobeams, while cantilever resonance modes followed the expected inverse-length-squared trend. Q-factors on the o...

Crystal growth, spectral and laser properties of Nd:LSAT single crystal

Science.gov (United States)

Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

2011-10-01

Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

X-ray diffraction studies of structures of Be, Al, LiF, Fe+3%Si, Si, SiO2, KCl under dynamic pressures from 2 Gpa to 20 Gpa

International Nuclear Information System (INIS)

Egorov, L.A.; Barenboim, A.I.; Mokhova, V.V.; Dorohin, V.V.; Samoilov, A.I.

1997-01-01

Currently, the only direct method to study behaviour of solid crystal substance structures under dynamic compression is method to record X-rays diffraction pictures of crystal structures under shock compression. Thepaper presents results of X-rays diffraction measurements concerning structural parameters of shock compressed substances at pressures higher than Hugoniot elastic limit (Be, Al, LiF, Fe+3%Si), lower than Hugoniot elastic limit (Si, SiO 2 , LiF) and in the area of pressures of phase transformation beginning (KCl, Si). Recorded states of shock-compressed substance structures demonstrate identity of structural deformations at pressures higher and lower than Hugoniot elastic limit as well as at pressures above the phase transformation point, which can be characterized as single-axial deformations. (orig.)

Unidirectional growth and characterization of L-arginine monohydrochloride monohydrate single crystals

International Nuclear Information System (INIS)

Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.

2011-01-01

Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.

Mesoporous Zeolite Single Crystals for Catalytic Hydrocarbon Conversion

DEFF Research Database (Denmark)

Schmidt, I.; Christensen, Claus H.; Kustova, Marina

2005-01-01

Recently, mesoporous zeolite single crystals were discovered. They constitute a novel family of materials that features a combined micropore and mesopore architecture within each individual crystal. Here, we briefly summarize recent catalytic results from cracking and isomerization of alkalies......, alkylation of aromatics and present new results on isomerization of aromatics. Specifically, the shape-selective isomerization of meta-xylenc into para-xylene and ortho-xylene is studied. In all these reactions, rnesoporous zeolite single crystals prove to be unique catalysts since they provide easy...... transport to and from active sites and at the same time maintain the shape-selectivity required. Thus, all these results support the idea that the beneficial effect of the mesopores system in the mesoporous zeolite single crystals call be solely attributed to enhanced mass transport....

Resistivity distribution of silicon single crystals using codoping

Science.gov (United States)

Wang, Jong Hoe

2005-07-01

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

Solar cell structure incorporating a novel single crystal silicon material

Science.gov (United States)

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

International Nuclear Information System (INIS)

Taboada, A. G.; Kreiliger, T.; Falub, C. V.; Känel, H. von; Meduňa, M.; Salvalaglio, M.; Miglio, L.; Isa, F.; Barthazy Meier, E.; Müller, E.; Isella, G.

2016-01-01

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images

Numerical study of slip system activity and crystal lattice rotation under wedge nanoindents in tungsten single crystals

Science.gov (United States)

Volz, T.; Schwaiger, R.; Wang, J.; Weygand, S. M.

2018-05-01

Tungsten is a promising material for plasma facing components in future nuclear fusion reactors. In the present work, we numerically investigate the deformation behavior of unirradiated tungsten (a body-centered cubic (bcc) single crystal) underneath nanoindents. A finite element (FE) model is presented to simulate wedge indentation. Crystal plasticity finite element (CPFE) simulations were performed for face-centered and body-centered single crystals accounting for the slip system family {110} in the bcc crystal system and the {111} slip family in the fcc system. The 90° wedge indenter was aligned parallel to the [1 ¯01 ]-direction and indented the crystal in the [0 1 ¯0 ]-direction up to a maximum indentation depth of 2 µm. In both, the fcc and bcc single crystals, the activity of slip systems was investigated and compared. Good agreement with the results from former investigations on fcc single crystals was observed. Furthermore, the in-plane lattice rotation in the material underneath an indent was determined and compared for the fcc and bcc single crystals.

High-quality single crystals for neutron experiments

Indian Academy of Sciences (India)

studies and our collaborative research projects with other UK and international groups will be discussed. Keywords. Crystal growth; floating zone method; neutron scattering. ... of single crystals of new materials is a highly competitive business.

Natural gels: crystal-chemistry of short range ordered components in Al, Fe, and Si systems

International Nuclear Information System (INIS)

Ildefonse, Ph.; Calas, G.

1997-01-01

In this review, the most important inorganic natural gels are presented: opal, aluminosilicate (allophanes) and hydrous iron oxides and silicates. It is demonstrated that natural gels are ordered at the atomic scale. In allophanes, Al is distributed between octahedral and tetrahedral sites. The amount of Al increases as Al/Si ratio decreases. Si-rich allophane have a local structure around Al and Si very different of that is known in kaolinite or halloysite. Transformation of Si-rich allophanes to crystallized minerals implies dissolution-recrystallization processes. On the contrary, in iron silicate with Fe/Si = 0.72, Si and Fe environments are close to those found in nontronite. The gel transformation to Fe-smectite may occur by long range ordering during ageing. In ferric silicate gels, the similarity of local structure around Fe in poorly ordered precursors and what is known in crystallized minerals suggests a solid transformation during ageing. This difference between iron and aluminium is mainly due to the ability of Al to enter both tetrahedral and octahedral sites, while the affinity of iron for octahedral sites is higher at low temperature

Self-templated synthesis of single-crystal and single-domain ferroelectric nanoplates

KAUST Repository

Chao, Chunying

2012-08-15

Free-standing single-crystal PbTiO 3 nanoplates (see picture) were synthesized by a facile hydrothermal method. A "self-templated" crystal growth is presumed to lead to the formation of the PbTiO 3 nanoplates, which have ferroelectric single-domain structures, whose polarization areas can be manipulated by writing and reading. The nanoplates are also effective catalysts for the oxidation of carbon monoxide. © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigations on the crystal-structure and non-ambient behaviour of K2Ca2Si8O19 - a new potassium calcium silicate

Science.gov (United States)

Schmidmair, Daniela; Kahlenberg, Volker; Praxmarer, Alessandra; Perfler, Lukas; Mair, Philipp

2017-09-01

Within the context of a systematic re-investigation of phase relationships between compounds of the ternary system K2O-CaO-SiO2 a new potassium calcium silicate with the chemical formula K2Ca2Si8O19 was synthesized via solid state reactions as well as the flux method using KCl as a solvent. Its crystal structure was determined from single-crystal X-ray diffraction data by applying direct methods. The new compound crystallizes in the triclinic space group P 1 bar . Unit cell dimensions are a = 7.4231(7) Å, b = 10.7649(10) Å, c = 12.1252(10) Å, α = 70.193(8)°, β = 83.914(7)° and γ = 88.683(7)°. K2Ca2Si8O19 is built up of corner-connected, slightly distorted [SiO4]-tetrahedra forming double-sheets, which are linked by double-chains of edge-sharing [CaO6]-octahedra. Electroneutrality of the material is provided by additional potassium atoms that are located within the voids of the silicate layers and between adjacent [Ca2O6]-double-chains. Further characterization of the compound was performed by Raman spectroscopy and differential thermal analysis. The behaviour of K2Ca2Si8O19 under high-temperature and high-pressure was investigated by in-situ high-temperature powder X-ray diffraction up to a maximum temperature of 1125 °C and a piston cylinder experiment at 1.5 GPa and 1100 °C. Additionally an overview of known double-layer silicates is given as well as a comparison of K2Ca2Si8O19 to closely related structures.

Gallium arsenide single crystal solar cell structure and method of making

Science.gov (United States)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Single-Photon Source for Quantum Information Based on Single Dye Molecule Fluorescence in Liquid Crystal Host

International Nuclear Information System (INIS)

Lukishova, S.G.; Knox, R.P.; Freivald, P.; McNamara, A.; Boyd, R.W.; Stroud, Jr. C.R.; Schmid, A.W.; Marshall, K.L.

2006-01-01

This paper describes a new application for liquid crystals: quantum information technology. A deterministically polarized single-photon source that efficiently produces photons exhibiting antibunching is a pivotal hardware element in absolutely secure quantum communication. Planar-aligned nematic liquid crystal hosts deterministically align the single dye molecules which produce deterministically polarized single (antibunched) photons. In addition, 1-D photonic bandgap cholesteric liquid crystals will increase single-photon source efficiency. The experiments and challenges in the observation of deterministically polarized fluorescence from single dye molecules in planar-aligned glassy nematic-liquid-crystal oligomer as well as photon antibunching in glassy cholesteric oligomer are described for the first time

Angular distributions of ions channeled in the Si crystals

International Nuclear Information System (INIS)

Petrovic, S.; Korica, S.; Kokkoris, M.; Neskovic, N.

2002-01-01

In this study we analyze the angular distributions of Ne 10+ ions channeled in the Si crystals. The ion energy is 60 MeV and the crystal thickness is varied from 286 to 3435 nm. This thickness range corresponds to the reduced crystal thickness range from 0.5 to 6, i.e. from the second to the twelfth rainbow cycle. The angular distributions were obtained via the numerical solution of the ion equations of motion and the computer simulation method. The analysis shows that the angular distribution has a periodic behavior. We also analyze the transmission patterns corresponding to the angular distributions. These patterns should be compared to the experimental patterns obtainable by a two-dimensional position sensitive detector. We demonstrate that, when the ion beam divergence is sufficiently large, i.e. much larger than the critical angle for channeling, the channeling star effect occurs in the transmission patterns

Crystal plasticity study of single crystal tungsten by indentation tests

International Nuclear Information System (INIS)

Yao, Weizhi

2012-01-01

Owing to its favorable material properties, tungsten (W) has been studied as a plasma-facing material in fusion reactors. Experiments on W heating in plasma sources and electron beam facilities have shown an intense micro-crack formation at the heated surface and sub-surface. The cracks go deep inside the irradiated sample, and often large distorted areas caused by local plastic deformation are present around the cracks. To interpret the crack-induced microscopic damage evolution process in W, one needs firstly to understand its plasticity on a single grain level, which is referred to as crystal plasticity. In this thesis, the crystal plasticity of single crystal tungsten (SCW) has been studied by spherical and Berkovich indentation tests and the finite element method with a crystal plasticity model. Appropriate values of the material parameters included in the crystal plasticity model are determined by fitting measured load-displacement curves and pile-up profiles with simulated counterparts for spherical indentation. The numerical simulations reveal excellent agreement with experiment. While the load-displacement curves and the deduced indentation hardness exhibit little sensitivity to the indented plane at small indentation depths, the orientation of slip directions within the crystals governs the development of deformation hillocks at the surface. It is found that several factors like friction, indentation depth, active slip systems, misoriented crystal orientation, misoriented sample surface and azimuthal orientation of the indenter can affect the indentation behavior of SCW. The Berkovich indentation test was also used to study the crystal plasticity of SCW after deuterium irradiation. The critical load (pop-in load) for triggering plastic deformation under the indenter is found to depend on the crystallographic orientation. The pop-in loads decrease dramatically after deuterium plasma irradiation for all three investigated crystallographic planes.

Photoluminescence properties of boron doped InSe single crystals

International Nuclear Information System (INIS)

Ertap, H.; Bacıoğlu, A.; Karabulut, M.

2015-01-01

Undoped and boron doped InSe single crystals were grown by Bridgman–Stockbarger technique. The PL properties of undoped, 0.1% and 0.5% boron doped InSe single crystals have been investigated at different temperatures. PL measurements revealed four emission bands labeled as A, B, C and D in all the single crystals studied. These emission bands were associated with the radiative recombination of direct free excitons (n=1), impurity-band transitions, donor–acceptor recombinations and structural defect related band (impurity atoms, defects, defect complexes, impurity-vacancy complex etc.), respectively. The direct free exciton (A) bands of undoped, 0.1% and 0.5% boron doped InSe single crystals were observed at 1.337 eV, 1.335 eV and 1.330 eV in the PL spectra measured at 12 K, respectively. Energy positions and PL intensities of the emission bands varied with boron addition. The FWHM of direct free exciton band increases while the FWHM of the D emission band decreases with boron doping. Band gap energies of undoped and boron doped InSe single crystals were calculated from the PL measurements. It was found that the band gap energies of InSe single crystals decreased with increasing boron content. - Highlights: • PL spectra of InSe crystals have been studied as a function of temperature. • Four emission bands were observed in the PL spectra at low temperatures. • PL intensity and position of free exciton band vary with doping and temperature. • Temperature dependences of the bands observed in the PL spectra were analyzed