WorldWideScience

Sample records for silicon spatial light

  1. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  2. Spatial decoupling of light absorption and catalytic activity of Ni-Mo-loaded high-aspect-ratio silicon microwire photocathodes

    Science.gov (United States)

    Vijselaar, Wouter; Westerik, Pieter; Veerbeek, Janneke; Tiggelaar, Roald M.; Berenschot, Erwin; Tas, Niels R.; Gardeniers, Han; Huskens, Jurriaan

    2018-03-01

    A solar-driven photoelectrochemical cell provides a promising approach to enable the large-scale conversion and storage of solar energy, but requires the use of Earth-abundant materials. Earth-abundant catalysts for the hydrogen evolution reaction, for example nickel-molybdenum (Ni-Mo), are generally opaque and require high mass loading to obtain high catalytic activity, which in turn leads to parasitic light absorption for the underlying photoabsorber (for example silicon), thus limiting production of hydrogen. Here, we show the fabrication of a highly efficient photocathode by spatially and functionally decoupling light absorption and catalytic activity. Varying the fraction of catalyst coverage over the microwires, and the pitch between the microwires, makes it possible to deconvolute the contributions of catalytic activity and light absorption to the overall device performance. This approach provided a silicon microwire photocathode that exhibited a near-ideal short-circuit photocurrent density of 35.5 mA cm-2, a photovoltage of 495 mV and a fill factor of 62% under AM 1.5G illumination, resulting in an ideal regenerative cell efficiency of 10.8%.

  3. Adaptive optics scanning laser ophthalmoscope using liquid crystal on silicon spatial light modulator: Performance study with involuntary eye movement

    Science.gov (United States)

    Huang, Hongxin; Toyoda, Haruyoshi; Inoue, Takashi

    2017-09-01

    The performance of an adaptive optics scanning laser ophthalmoscope (AO-SLO) using a liquid crystal on silicon spatial light modulator and Shack-Hartmann wavefront sensor was investigated. The system achieved high-resolution and high-contrast images of human retinas by dynamic compensation for the aberrations in the eyes. Retinal structures such as photoreceptor cells, blood vessels, and nerve fiber bundles, as well as blood flow, could be observed in vivo. We also investigated involuntary eye movements and ascertained microsaccades and drifts using both the retinal images and the aberrations recorded simultaneously. Furthermore, we measured the interframe displacement of retinal images and found that during eye drift, the displacement has a linear relationship with the residual low-order aberration. The estimated duration and cumulative displacement of the drift were within the ranges estimated by a video tracking technique. The AO-SLO would not only be used for the early detection of eye diseases, but would also offer a new approach for involuntary eye movement research.

  4. Light Trapping with Silicon Light Funnel Arrays

    Directory of Open Access Journals (Sweden)

    Ashish Prajapati

    2018-03-01

    Full Text Available Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase. This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization.

  5. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  6. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

  7. Liquid crystal television spatial light modulators

    Science.gov (United States)

    Liu, Hua-Kuang; Chao, Tien-Hsin

    1989-01-01

    The spatial light modulation characteristics and capabilities of the liquid crystal television (LCTV) spatial light modulators (SLMs) are discussed. A comparison of Radio Shack, Epson, and Citizen LCTV SLMs is made.

  8. Visible light emission from porous silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang

    2017-01-01

    Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

  9. White light emission from engineered silicon carbide

    DEFF Research Database (Denmark)

    Ou, Haiyan

    Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

  10. Nonclassical light sources for silicon photonics

    Science.gov (United States)

    Bajoni, Daniele; Galli, Matteo

    2017-09-01

    Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

  11. Lighting emitting microstructures in porous silicon

    International Nuclear Information System (INIS)

    Squire, E.

    1999-01-01

    Experimental and theoretical techniques are used to examine microstructuring effects on the optical properties of single layer, multilayer, single and multiple microcavity structures fabricated from porous silicon. Two important issues regarding the effects of the periodic structuring of this material are discussed. Firstly, the precise role played by this microstructuring, given that the luminescence is distributed throughout the entire structure and the low porosity layers are highly absorbing at short wavelengths. The second issue examined concerns the observed effects on the optical spectra of the samples owing to the emission bandwidth of the material being greater than the optical stopband of the structure. Measurements of the reflectivity and photoluminescence spectra of different porous silicon microstructures are presented and discussed. The results are modelled using a transfer matrix technique. The matrix method has been modified to calculate the optical spectra of porous silicon specifically by accounting for the effects of dispersion, absorption and emission within the material. Layer thickness and porosity gradients have also been included in the model. The dielectric function of the two component layers (i.e. silicon and air) is calculated using the Looyenga formula. This approach can be adapted to suit other porous semiconductors if required. Examination of the experimental results have shown that the emitted light is strongly controlled by the optical modes of the structures. Furthermore, the data display an interplay of a wide variety of effects dependent upon the structural composition. Comparisons made between the experimental and calculated reflectivity and photoluminescence spectra of many different porous silicon microstructures show very good agreement. (author)

  12. Planar Silicon Optical Waveguide Light Modulators

    DEFF Research Database (Denmark)

    Leistiko, Otto; Bak, H.

    1994-01-01

    that values in the nanosecond region should be possible, however, the measured values are high, 20 microseconds, due to the large area of the injector junctions, 1× 10¿2 cm2, and the limitations imposed by the detection circuit. The modulating properties of these devices are impressive, measurements......The results of an experimental investigation of a new type of optical waveguide based on planar technology in which the liglht guiding and modulation are achieved by exploiting free carrier effects in silicon are presented. Light is guided between the n+ substrate and two p+ regions, which also...... serve as carrier injectors for controling absorption. Light confinement of single mode devices is good, giving spot sizes of 9 ¿m FWHM. Insertion loss measurements indicate that the absorption losses for these waveguides are extremely low, less 1 dB/cm. Estimates of the switching speed indicate...

  13. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  14. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  15. Pulse shaping using a spatial light modulator

    CSIR Research Space (South Africa)

    Botha, N

    2009-07-01

    Full Text Available Femtosecond pulse shaping can be done by different kinds of pulse shapers, such as liquid crystal spatial light modulators (LC SLM), acousto optic modulators (AOM) and deformable and movable mirrors. A few applications where pulse shaping...

  16. Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals

    Directory of Open Access Journals (Sweden)

    Safaa Hassan

    2017-12-01

    Full Text Available Light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs with dual periodicity and dual basis is herein explored for the first time. Broadband, wide-incident-angle, and polarization-independent light-trapping enhancement was achieved in silicon solar cells patterned with these GPSCs. These super-crystals were designed by multi-beam interference, rendering them flexible and efficient. The optical response of the patterned silicon solar cell retained Bloch-mode resonance; however, light absorption was greatly enhanced in broadband wavelengths due to the graded, complex unit super-cell nanostructures, leading to the overlap of Bloch-mode resonances. The broadband, wide-angle light coupling and trapping enhancement mechanism are understood to be due to the spatial variance of the index of refraction, and this spatial variance is due to the varying filling fraction, the dual basis, and the varying lattice constants in different directions.

  17. Exploiting the spatial profiles of light

    CSIR Research Space (South Africa)

    Dudley, Angela L

    2017-01-01

    Full Text Available We implement digital holograms for the creation and detection of the spatial modes of light. We make use of modal decomposition theory to determine the numerous properties of light, from the modal content of laser beams to decoding the information...

  18. Light-Induced Degradation of Thin Film Silicon Solar Cells

    International Nuclear Information System (INIS)

    Hamelmann, F U; Weicht, J A; Behrens, G

    2016-01-01

    Silicon-wafer based solar cells are still domination the market for photovoltaic energy conversion. However, most of the silicon is used only for mechanical stability, while only a small percentage of the material is needed for the light absorption. Thin film silicon technology reduces the material demand to just some hundred nanometer thickness. But even in a tandem stack (amorphous and microcrystalline silicon) the efficiencies are lower, and light-induced degradation is an important issue. The established standard tests for characterisation are not precise enough to predict the performance of thin film silicon solar cells under real conditions, since many factors do have an influence on the degradation. We will show some results of laboratory and outdoor measurements that we are going to use as a base for advanced modelling and simulation methods. (paper)

  19. Estimation and Compensation of aberrations in Spatial Light Modulators

    International Nuclear Information System (INIS)

    Arias, Augusto; Castaneda, Roman

    2011-01-01

    The spatial light modulator (SLM) Holoeye LC-R720 is based on LCoS (Liquid Crystal on Silicon) technology. Due to the induced curvatures on the silicon plate by the production process, there are static aberrations in the wave-fronts modified by the SLM. In order to calculate the aberrated wave-front we used phase-shifting interferometry, an optimization algorithm for far field propagation, and the geometric characterization of the focal spot along the caustic. Zernike polynomials were used for expanding and comparing the wave-fronts. The aberration compensation was carried out by displaying the conjugated transmittance on the SLM. The complexity of the experimental setup and the requirements of the digital processing of each estimation method were comparatively analyzed.

  20. Light-induced defect creation in hydrogenated polymorphous silicon

    International Nuclear Information System (INIS)

    Morigaki, K.; Takeda, K.; Hikita, H.; Roca i Cabarrocas, P.

    2005-01-01

    Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 deg. C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films

  1. Spatial resolution of wedge shaped silicon microstrip detectors

    International Nuclear Information System (INIS)

    Anticic, T.; Barnett, B.; Blumenfeld, B.; Chien, C.Y.; Fisher, P.; Gougas, A.; Krizmanic, J.; Madansky, L.; Newman, D.; Orndorff, J.; Pevsner, A.; Spangler, J.

    1995-01-01

    Several wedge-shaped silicon microstrip detectors with pitches from 30 to 100 μm have been designed by our group and beam tested at the CERN SPS. We find the spatial resolution σ becomes larger at the rate of 0.21 μm per 1 μm increase in pitch, but the number of strips per cluster remains about the same as the pitch varies from 30 to 100 μm. (orig.)

  2. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Christmann, Gabriel; Descoeudres, Antoine; Nicolay, Sylvain; Despeisse, Matthieu; Watabe, Yoshimi; Ballif, Christophe

    2016-01-01

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  3. Light-induced performance increase of silicon heterojunction solar cells

    KAUST Repository

    Kobayashi, Eiji

    2016-10-11

    Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.

  4. Enhanced Interferometry with Programmable Spatial Light Modulator

    Science.gov (United States)

    2010-06-07

    Interferometry, Spatial Light Modulator, Surface Accuracy, Optics, Mirror, Zernike , Freeform Optics, Null Testing, Hartman, Wavefront 16. SECURITY...S L M P ix e l- c a m Tilted Flat Mirror L a s e r PV. ± 3.4 λ -Tilt by the flat mirror, ~7 waves ~ 14 fringes Interferogram 3D view (Various...Interferogram ( 3D view) x- profile y- profile (Various waveplates and telescopes not shown) SLM can compensate tilted wavefronts with an accuracy of

  5. Preventing light-induced degradation in multicrystalline silicon

    Science.gov (United States)

    Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

    2014-04-01

    Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

  6. Flicker in a twisted nematic spatial light modulator

    Science.gov (United States)

    Calderón-Hermosillo, Yuliana; García-Márquez, Jorge; Espinosa-Luna, Rafael; Ochoa, Noé Alcalá; López, Víctor; Aguilar, Alberto; Noé-Arias, Enrique; Alayli, Yasser

    2013-06-01

    Liquid Crystal on Silicon (LCoS) Spatial Light Modulators (SLM) are widely used for their capability to control beams howbeit fluctuations in phase and amplitude. It is then necessary to understand the negative effects of these fluctuations, also known as flicker, and the means to mitigate them. The flicker is observed either as high frequency variations of polarization, attenuation or high phase fluctuations on the wave front modulated by the LCoS device. Here, we compare the flicker behavior in a twisted nematic (TN) LCoS-SLM for different polarization schemes and temperatures. The quantitative evaluation shows that flicker is effectively reduced only by chilling the LCoS panel to temperatures just below 0 °C but, the LCoS modulation capability is also affected.

  7. Spatial light modulation for mode conditioning

    DEFF Research Database (Denmark)

    Glückstad, Jesper; Palima, Darwin

    We demonstrate patented techniques for generating tuneable complex field distributions for controllable coupling to high-order guided modes of micro-structured fibres. The optical Fourier transform of binary phase-only patterns which are encoded on a computer-controlled spatial light modulator......, generates complex field distributions for selective launching of a desired mode. Both the amplitude and the phase of the programmable fields are modulated by straightforward and fast adjustments of simple pre-defined binary phase-only diffractive patterns. Experiments demonstrate tuneable coupling...

  8. Consequences of Spatial Antisymmetry on Light

    Energy Technology Data Exchange (ETDEWEB)

    Mascarenhas, Angelo; Fluegel, Brian

    2016-12-21

    Light propagation in two and three dimensional lattices for which the index of refraction exhibits spatial antisymmetry is investigated in the ray and photonic crystal regimes. In these regimes, all the two dimensional antisymmetry groups for which light fails to propagate are identified. In the ray-regime, it is observed that in tilings described by 7 of the 46 two dimensional antisymmetric groups, light is localized within a fundamental domain and does not propagate through the tiling, in contrast to the behavior in the other 39 groups. To understand the above phenomenon, a rule based on the number of anti-mirror planes passing through a single Bravais lattice point is derived. In the wave regime for photonic crystals, it is observed that there are no propagating eigensolutions for the same 7 tilings as above, whereas propagating solutions and energy pass band dispersion curves can be obtained for the other 39 groups. The reasons underlying this peculiar behavior are analyzed using the topological approach for modeling flow in dynamical billiards to shed light on the applicability of Bloch's theorem for these periodic antisymmetric lattices.

  9. Light emission from silicon with tin-containing nanocrystals

    Directory of Open Access Journals (Sweden)

    Søren Roesgaard

    2015-07-01

    Full Text Available Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

  10. Indoor Measurement of Angle Resolved Light Absorption by Black Silicon

    DEFF Research Database (Denmark)

    Amdemeskel, Mekbib Wubishet; Iandolo, Beniamino; Davidsen, Rasmus Schmidt

    2017-01-01

    Angle resolved optical spectroscopy of photovoltaic (PV) samples gives crucial information on PV panels under realistic working conditions. Here, we introduce measurements of angle resolved light absorption by PV cells, performed indoors using a collimated high radiance broadband light source. Our...... indoor method offers a significant simplification as compared to measurements by solar trackers. As a proof-of-concept demonstration, we show characterization of black silicon solar cells. The experimental results showed stable and reliable optical responses that makes our setup suitable for indoor......, angle resolved characterization of solar cells....

  11. Plasmonic nanofocusing of light in an integrated silicon photonics platform.

    Science.gov (United States)

    Desiatov, Boris; Goykhman, Ilya; Levy, Uriel

    2011-07-04

    The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

  12. CLASSiC: Cherenkov light detection with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Adriani, Oscar [Physics Dept., University of Florence, Via Sansone 1, 50019, Sesto Fiorentino (Italy); INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Albergo, Sebastiano [Physics Dept., University of Catania, Via Santa Sofia 64, 95123 Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy); D' Alessandro, Raffaello [Physics Dept., University of Florence, Via Sansone 1, 50019, Sesto Fiorentino (Italy); INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Lenzi, Piergiulio [INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Sciuto, Antonella [CNR-IMM, VIII Strada 5, Zona Industriale, Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy); Starodubtsev, Oleksandr [INFN dep. of Florence, Via Bruno Rossi 1, 50019 Sesto Fiorentino (Italy); Tricomi, Alessia [Physics Dept., University of Catania, Via Santa Sofia 64, 95123 Catania (Italy); INFN dep. of Catania, Via Santa Sofia 64, 95123 Catania (Italy)

    2017-02-11

    We present the CLASSiC R&D for the development of a silicon carbide (SiC) based avalanche photodiode for the detection of Cherenkov light. SiC is a wide-bandgap semiconductor material, which can be used to make photodetectors that are insensitive to visible light. A SiC based light detection device has a peak sensitivity in the deep UV, making it ideal for Cherenkov light. Moreover, the visible blindness allows such a device to disentangle Cherenkov light and scintillation light in all those materials that scintillate above 400 nm. Within CLASSiC, we aim at developing a device with single photon sensitivity, having in mind two main applications. One is the use of the SiC APD in a new generation ToF PET scanner concept, using the Cherenov light emitted by the electrons following 511 keV gamma ray absorption as a time-stamp. Cherenkov is intrinsically faster than scintillation and could provide an unprecedentedly precise time-stamp. The second application concerns the use of SiC APD in a dual readout crystal based hadronic calorimeter, where the Cherenkov component is used to measure the electromagnetic fraction on an event by event basis. We will report on our progress towards the realization of the SiC APD devices, the strategies that are being pursued toward the realization of these devices and the preliminary results on prototypes in terms of spectral response, quantum efficiency, noise figures and multiplication.

  13. Locally-enhanced light scattering by a monocrystalline silicon wafer

    Directory of Open Access Journals (Sweden)

    Li Ma

    2018-03-01

    Full Text Available We study the optical properties of light scattering by a monocrystalline silicon wafer, by using transparent material to replicate its surface structure and illuminating a fabricated sample with a laser source. The experimental results show that the scattering field contains four spots of concentrated intensity with high local energy, and these spots are distributed at the four vertices of a square with lines of intensity linking adjacent spots. After discussing simulations of and theory about the formation of this light scattering, we conclude that the scattering field is formed by the effects of both geometrical optics and physical optics. Moreover, we calculate the central angle of the spots in the light field, and the result indicates that the locally-enhanced intensity spots have a definite scattering angle. These results may possibly provide a method for improving energy efficiency within mono-Si based solar cells.

  14. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

  15. Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2015-09-01

    Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

  16. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  17. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    International Nuclear Information System (INIS)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V; Gracia-Jimenez, J M

    2009-01-01

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R m ). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm -2 .

  18. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Science.gov (United States)

    Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

    2018-02-01

    A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  19. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Directory of Open Access Journals (Sweden)

    Zahra Bisadi

    2018-02-01

    Full Text Available A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  20. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    Energy Technology Data Exchange (ETDEWEB)

    Niaz, Shanawer, E-mail: shanawersi@gmail.com [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Zdetsis, Aristides D.; Koukaras, Emmanuel N. [Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Gülseren, Oǧuz [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Sadiq, Imran [Centre of Excellence in Solid State Physics, University of the Punjab, Lahore (Pakistan)

    2016-11-30

    Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si{sub 29} nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  1. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    International Nuclear Information System (INIS)

    Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

    2016-01-01

    Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si 29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  2. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    Science.gov (United States)

    Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

    2016-11-01

    In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  3. Disorder Improves Light Absorption in Thin Film Silicon Solar Cells with Hybrid Light Trapping Structure

    Directory of Open Access Journals (Sweden)

    Yanpeng Shi

    2016-01-01

    Full Text Available We present a systematic simulation study on the impact of disorder in thin film silicon solar cells with hybrid light trapping structure. For the periodical structures introducing certain randomness in some parameters, the nanophotonic light trapping effect is demonstrated to be superior to their periodic counterparts. The nanophotonic light trapping effect can be associated with the increased modes induced by the structural disorders. Our study is a systematic proof that certain disorder is conceptually an advantage for nanophotonic light trapping concepts in thin film solar cells. The result is relevant to the large field of research on nanophotonic light trapping which currently investigates and prototypes a number of new concepts including disordered periodic and quasiperiodic textures. The random effect on the shape of the pattern (position, height, and radius investigated in this paper could be a good approach to estimate the influence of experimental inaccuracies for periodic or quasi-periodic structures.

  4. Crystalline silicon cell performance at low light intensities

    Energy Technology Data Exchange (ETDEWEB)

    Reich, N.H.; van Sark, W.G.J.H.M.; Alsema, E.A.; Turkenburg, W.C. [Utrecht University, Faculty of Science, Copernicus Institute for Sustainable Development and Innovation, Department of Science, Techonology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Lof, R.W.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Device, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Sinke, W.C. [Energy research Centre of the Netherlands (ECN), P.O. Box 1, 1755 ZG Petten (Netherlands)

    2009-09-15

    Measured and modelled JV characteristics of crystalline silicon cells below one sun intensity have been investigated. First, the JV characteristics were measured between 3 and 1000 W/m{sup 2} at 6 light levels for 41 industrially produced mono- and multi-crystalline cells from 8 manufacturers, and at 29 intensity levels for a single multi-crystalline silicon between 0.01 and 1000 W/m{sup 2}. Based on this experimental data, the accuracy of the following four modelling approaches was evaluated: (1) empirical fill factor expressions, (2) a purely empirical function, (3) the one-diode model and (4) the two-diode model. Results show that the fill factor expressions and the empirical function fail at low light intensities, but a new empirical equation that gives accurate fits could be derived. The accuracy of both diode models are very high. However, the accuracy depends considerably on the used diode model parameter sets. While comparing different methods to determine diode model parameter sets, the two-diode model is found to be preferred in principle: particularly its capability in accurately modelling V{sub OC} and efficiency with one and the same parameter set makes the two-diode model superior. The simulated energy yields of the 41 commercial cells as a function of irradiance intensity suggest unbiased shunt resistances larger than about 10 k{omega} cm{sup 2} may help to avoid low energy yields of cells used under predominantly low light intensities. Such cells with diode currents not larger than about 10{sup -9} A/cm{sup 2} are excellent candidates for Product Integrated PV (PIPV) appliances. (author)

  5. Optimization of the digital Silicon Photomultiplier for Cherenkov light detection

    International Nuclear Information System (INIS)

    Frach, T

    2012-01-01

    The Silicon Photomultiplier is a promising alternative to fast vacuum photodetectors. We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. Photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic has the added benefit of low power consumption and possible integration of data post-processing in the sensor. In this paper, we discuss the sensor architecture together with its characteristics, and its possible optimizations for applications requiring the detection of Cherenkov light.

  6. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

  7. Interaction of Light with Metallized Ultrathin Silicon Membrane

    Science.gov (United States)

    Shome, Krishanu

    Freestanding metallized structures, a few tens of nanometer thick, show promise in creating flow-through sensors, single molecule detectors and novel solar cells. In this thesis we study test structures that are a step towards creating such devices. Finite- difference time-domain simulations have been used to understand and predict the interaction of light with such devices. Porous nanocrystalline silicon membrane is a novel freestanding layer structure that has been used as a platform to fabricate and study sensors and novel slot nanohole devices. Optical mode studies of the sensing structures, together with the method of fabrication inspired the creation of ultrathin freestanding hydrogenated amorphous silicon p-i-n junctions solar cells. All the freestanding structures used in this thesis are just a few tens of nanometers in thicknesses. In the first part of the thesis the sensing properties of the metallized porous nanocrystalline structure are studied. The surprising blueshift associated with the sensing peak is observed experimentally and predicted theoretically with the help of simulations. Polarization dependence of the membranes is predicted and confirmed for angled deposition of metal on the membranes. In the next part, a novel slot structure is fabricated and modeled to study the slot effect in nanohole metal-insulator-metal structures. Atomic layer deposition of alumina is used to conformally deposit alumina within the nanohole to create the slot structure. Simulation models were used to calculate the lowest modal volume of 4x10-5 mum3 for an optimized structure. In the last part of the thesis, freestanding solar cells are fabricated by effectively replacing the porous nanocrystalline silicon layer of the membranes with a hydrogenated amorphous silicon p-i-n junction with metal layers on both sides of the p-i-n junction. The metal layers act both as electrical contacts as well as mirrors for a Fabry Perot cavity resonator. This helps in tuning the

  8. Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

    2014-11-03

    Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

  9. Spatially resolved determination of the short-circuit current density of silicon solar cells via lock-in thermography

    International Nuclear Information System (INIS)

    Fertig, Fabian; Greulich, Johannes; Rein, Stefan

    2014-01-01

    We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.

  10. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Iftiquar, S.M.; Jung, Juyeon; Park, Hyeongsik; Cho, Jaehyun; Shin, Chonghoon; Park, Jinjoo; Jung, Junhee; Bong, Sungjae; Kim, Sunbo; Yi, Junsin

    2015-01-01

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V oc ) of 0.87, 0.90 V, short circuit current densities (J sc ) of 14.2, 15.36 mA/cm 2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d i ) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d i while the V oc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d i = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J sc and red response of the external quantum efficiency to 16.6 mA/cm 2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J sc increases and V oc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J sc improved from 15.4 mA/cm 2 to 16.6 mA/cm 2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  11. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  12. Practical silicon Light emitting devices fabricated by standard IC technology

    International Nuclear Information System (INIS)

    Aharoni, H.; Monuko du Plessis; Snyman, L.W.

    2004-01-01

    Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

  13. Temporal and spatial variation in the fouling of silicone coatings in Pearl Harbor, Hawaii.

    Science.gov (United States)

    Holm, E R; Nedved, B T; Phillips, N; Deangelis, K L; Hadfield, M G; Smith, C M

    2000-01-01

    An antifouling or foul-release coating cannot be globally effective if it does not perform well in a range of environmental conditions, against a diversity of fouling organisms. From 1996 to 1998, the field test sites participating in the United States Navy's Office of Naval Research 6.2 Biofouling program examined global variation in the performance of 3 silicone foul-release coatings, viz. GE RTV11, Dow Corning RTV 3140, and Intersleek (International Coatings Ltd), together with a control anticorrosive coating (Ameron Protective Coatings F-150 series). At the University of Hawaii's test site in Pearl Harbor, significant differences were observed among the coatings in the rate of accumulation of fouling. The control coating failed rapidly; after 180-220 d immersion a community dominated by molluscs and sponges developed that persisted for the remainder of the experiment. Fouling of the GE and Dow Corning silicone coatings was slower, but eventually reached a similar community structure and coverage as the control coatings. The Intersleek coating remained lightly fouled throughout the experiment. Spatial variation in the structure of the community fouling the coatings was observed, but not in the extent of fouling. The rate of accumulation of fouling reflected differences among the coatings in adhesion of the tubeworm Hydroides elegans. The surface properties of these coatings may have affected the rate of fouling and the structure of the fouling community through their influence on larval settlement and subsequent interactions with other residents, predators, and the physical environment.

  14. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  15. The Influence of Environmental Spatial Layout on Perceived Lightness

    Science.gov (United States)

    Kanari, Kei; Inagami, Makoto; Kaneko, Hirohiko

    2011-01-01

    It is obvious that perceived lightness of a surface depends on the surrounding luminance distribution in 2D and 3D. These effects are usually explained by the mechanisms at relatively low level of visual system. However, there seems to be a relation between the illuminance and spatial layout of the scene regardless of the surrounding luminance distribution. If this is valid, perceived lightness of a surface in the scene could be influenced by the spatial layout in the scene. In this research, we investigated the relation between the perceived lightness of surface and the spatial layout of the scene. The subject matched the lightness of test patch presented on a natural picture with various spatial layout to that of comparison stimulus presented on a uniform gray background. The mean luminance of the surround stimuli were the same and the local contrast between the text patch and the surround was kept constant. Results showed that the perceived lightness of a stimulus depended on the spatial structure presented in the background. This result indicates that the spatial layout of the scene is related to the illuminance of that and influenced on perceived lightness.

  16. Laser trapping and spatial light modulators

    DEFF Research Database (Denmark)

    Glückstad, Jesper

    2012-01-01

    INVITED: Robotics at the macro-scale typically uses light for carrying information in machine vision for monitoring and feedback in intelligent robotic guidance systems. With light’s miniscule momentum, shrinking robots down to the micro-scale regime creates opportunities for exploiting optical f...

  17. Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing

    Science.gov (United States)

    Chen, Christine P.

    The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post

  18. Beam-quality measurements using a spatial light modulator

    CSIR Research Space (South Africa)

    Schulze, C

    2012-11-01

    Full Text Available We present a fast and easy technique for measuring the beam propagation ratio, M2, of laser beams using a spatial light modulator. Our technique is based on digitally simulating the free-space propagation of light, thus eliminating the need...

  19. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  20. High throughput diffractive multi-beam femtosecond laser processing using a spatial light modulator

    Energy Technology Data Exchange (ETDEWEB)

    Kuang Zheng [Laser Group, Department of Engineering, University of Liverpool Brownlow Street, Liverpool L69 3GQ (United Kingdom)], E-mail: z.kuang@liv.ac.uk; Perrie, Walter [Laser Group, Department of Engineering, University of Liverpool Brownlow Street, Liverpool L69 3GQ (United Kingdom); Leach, Jonathan [Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Sharp, Martin; Edwardson, Stuart P. [Laser Group, Department of Engineering, University of Liverpool Brownlow Street, Liverpool L69 3GQ (United Kingdom); Padgett, Miles [Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Dearden, Geoff; Watkins, Ken G. [Laser Group, Department of Engineering, University of Liverpool Brownlow Street, Liverpool L69 3GQ (United Kingdom)

    2008-12-30

    High throughput femtosecond laser processing is demonstrated by creating multiple beams using a spatial light modulator (SLM). The diffractive multi-beam patterns are modulated in real time by computer generated holograms (CGHs), which can be calculated by appropriate algorithms. An interactive LabVIEW program is adopted to generate the relevant CGHs. Optical efficiency at this stage is shown to be {approx}50% into first order beams and real time processing has been carried out at 50 Hz refresh rate. Results obtained demonstrate high precision surface micro-structuring on silicon and Ti6Al4V with throughput gain >1 order of magnitude.

  1. Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

    Directory of Open Access Journals (Sweden)

    Ruinan Sun

    2017-01-01

    Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

  2. Controlling the flow of light with silicon nanostructures

    International Nuclear Information System (INIS)

    Park, W

    2010-01-01

    Silicon is an important material for integrated photonics applications. High refractive index and transparency in the infrared region makes it an ideal platform to implement nanostructures for novel optical devices. We fabricated silicon photonic crystals and experimentally demonstrated negative refraction and self-collimation. We also used heterodyne near-field scanning optical microscope to directly visualize the anomalous wavefronts. When the periodicity is much smaller than wavelength, silicon photonic crystal can be described by the effective medium theory. By engineering effective refractive index with silicon nanorod size, we demonstrated an all-dielectric cloak structure which can hide objects in front of a highly reflecting plane. The work discussed in this review shows the powerful design flexibility and versatility of silicon nanostructures

  3. White-light emission from porous-silicon-aluminium Schottky junctions

    International Nuclear Information System (INIS)

    Masini, G.; La Monica, S.; Maiello, G.

    1996-01-01

    Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminium treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region

  4. Erbium environments in erbium-silicon/silica light emitting nanostructures

    International Nuclear Information System (INIS)

    Kashtiban, R J; Bangert, U; Crowe, I F; Halsall, M P

    2011-01-01

    Co-doping of SiO 2 with Si and Er to achieve silica fibre amplifiers has resulted in encouraging levels of light emission, much above those of Er-only doped SiO 2 . However, different fabrication methods, i.e., co-implantion and sequential implantation of Er and Si, has led to several factors difference in light levels. This paper looks into the reasons for these differences by establishing structure and local stoichiometry of the created entities via analytical transmission electron microscopy. In both cases Si-nanocrystals (NCs) have formed in the SiO 2 matrix. In the former case Er-ions are co-located with /integrated within the NCs, in the latter case NCs and Er are separate. By assessing the NCs' internal and interfacial structure with the surrounding material, we attempt to identify chemical/structural Er-phases/defects and their effect on the sensitising efficiency in the Er:Si-NCs system; high resolution phase contrast- and high angle dark field imaging as well as nano-scale spatially resolved electron energy core loss- and plasmon-spectroscopy carried out in an aberration corrected dedicated STEM lend valuable support to these studies.

  5. Spatial and temporal variation of light inside peach trees

    International Nuclear Information System (INIS)

    Genard, M.; Baret, F.

    1994-01-01

    Gap fractions measured with hemispherical photographs were used to describe spatial and temporal variations of diffuse and direct light fractions transmitted to shoots within peach trees. For both cultivars studied, spatial variability of daily diffuse and direct light transmitted to shoots was very high within the tree. Diffuse and daily direct light fractions transmitted to shoots increased with shoot height within the tree and for more erect shoots. Temporal variations of hourly direct light were also large among shoots. Hourly direct light fractions transmitted to shoots were analyzed using recent developments in multivariate exploratory analysis. A gradient was observed between shoots sunlit almost all day and other shoots almost never sunlit. Well sunlit shoots were mostly located at the top of the tree and were more erect. Shoots located in the outer parts of the tree crown were slightly but significantly more sunlit than others for one cultivar. Principal component analysis additionally discriminated shoots according to the time of the day they were sunlit. This classification was related to shoot compass position for one cultivar. Spatial location of the shoot in the tree explained only a small part of light climate variability. Consequences of modeling light climate within the tree are discussed

  6. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Directory of Open Access Journals (Sweden)

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  7. Focus of spatial attention during spatial working memory maintenance : Evidence from pupillary light response

    NARCIS (Netherlands)

    Fabius, J. H.; Mathôt, Sebastiaan; Schut, M. J.; Nijboer, T. C.W.; Van der Stigchel, S.

    2017-01-01

    In this experiment, we demonstrate modulation of the pupillary light response by spatial working memory (SWM). The pupillary light response has previously been shown to reflect the focus of covert attention, as demonstrated by smaller pupil sizes when a subject covertly attends a location on a

  8. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  9. Optimal Fisher Discriminant Ratio for an Arbitrary Spatial Light Modulator

    Science.gov (United States)

    Juday, Richard D.

    1999-01-01

    Optimizing the Fisher ratio is well established in statistical pattern recognition as a means of discriminating between classes. I show how to optimize that ratio for optical correlation intensity by choice of filter on an arbitrary spatial light modulator (SLM). I include the case of additive noise of known power spectral density.

  10. Creation and detection of optical modes with spatial light modulators

    CSIR Research Space (South Africa)

    Forbes, A

    2016-06-01

    Full Text Available (1979). 24. J. A. Davis, K. O. Valade´z, and D. M. Cottrell, “Encoding amplitude and phase information onto a binary phase-only spatial light modulator,” Appl. Opt. 42, 2003–2008 (2003). 25. E. Bolduc, N. Bent, E. Santamato, E. Karimi, and R. W. Boyd...

  11. Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

    NARCIS (Netherlands)

    van den Beld, Wesley Theodorus Eduardus; van den Berg, Albert; Eijkel, Jan C.T.

    2016-01-01

    In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated

  12. The spatial resolution of silicon-based electron detectors in beta-autoradiography.

    Science.gov (United States)

    Cabello, Jorge; Wells, Kevin

    2010-03-21

    Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

  13. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  14. Plasmonic scattering back reflector for light trapping in flat nano-crystalline silicon solar cells

    NARCIS (Netherlands)

    van Dijk, L.; van de Groep, J.; Veldhuizen, L.W.; Di Vece, M.; Polman, A.; Schropp, R.E.I.

    2016-01-01

    Most types of thin film solar cells require light management to achieve sufficient light absorptance. We demonstrate a novel process for fabricating a scattering back reflector for flat, thin film hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. This scattering back reflector consists of

  15. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    DEFF Research Database (Denmark)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

    2017-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally...... in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines...

  16. Optical particle trapping and dynamic manipulation using spatial light modulation

    DEFF Research Database (Denmark)

    Eriksen, René Lynge

    suitable for optical trapping. A phaseonly spatial light modulator (SLM) is used for the phase encoding of the laser beam. The SLM is controlled directly from a standard computer where phase information is represented as gray-scale image information. Experimentally, both linear and angular movements......This thesis deals with the spatial phase-control of light and its application for optical trapping and manipulation of micron-scale objects. Utilizing the radiation pressure, light exerts on dielectric micron-scale particles, functionality of optical tweezers can be obtained. Multiple intensity...... compression factors of two, which is not achievable with binary phase encoding, have been successfully demonstrated. In addition, the GPC method has been miniaturized and implemented in a planar optical platform and shown to work acceptably, with relatively high visibility. Furthermore, the GPC method has...

  17. Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Brett Hallam

    2017-12-01

    Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

  18. Light propagation in one-dimensional porous silicon complex systems

    NARCIS (Netherlands)

    Oton, C.J.; Dal Negro, L.; Gaburro, Z.; Pavesi, L.; Johnson, P.J.; Lagendijk, Aart; Wiersma, D.S.

    2003-01-01

    We discuss the optical properties of one-dimensional complex dielectric systems, in particular the time-resolved transmission through thick porous silicon quasiperiodic multi-layers. Both in numerical calculations and experiments we find dramatic distortion effects, i.e. pulse stretching and

  19. Converting sunlight into red light in fluorosilicate glass for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Chengguo, E-mail: mingchengguo1978@163.com [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Song, Feng [Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); Ren, Xiaobin [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Yuan, Fengying; Qin, Yueting [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); An, Liqun; Cai, Yuanxue [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China)

    2017-03-15

    Fluorosilicate glass was prepared by high-temperature melting method to explore highly efficient luminescence materials for amorphous silicon solar cells. Absorption, excitation and emission spectra of the glass were measured. The optical characters of the glass were discussed in details. The glass can efficiently convert sunlight into red light. Our glass can be applied to amorphous silicon solar cells as a converter of solar spectrum.

  20. Diffuse optical imaging using spatially and temporally modulated light

    Science.gov (United States)

    O'Sullivan, Thomas D.; Cerussi, Albert E.; Cuccia, David J.; Tromberg, Bruce J.

    2012-07-01

    The authors describe the development of diffuse optical imaging (DOI) technologies, specifically the use of spatial and temporal modulation to control near infrared light propagation in thick tissues. We present theory and methods of DOI focusing on model-based techniques for quantitative, in vivo measurements of endogenous tissue absorption and scattering properties. We specifically emphasize the common conceptual framework of the scalar photon density wave for both temporal and spatial frequency-domain approaches. After presenting the history, theoretical foundation, and instrumentation related to these methods, we provide a brief review of clinical and preclinical applications from our research as well as our outlook on the future of DOI technology.

  1. Topography and refractometry of nanostructures using spatial light interference microscopy.

    Science.gov (United States)

    Wang, Zhuo; Chun, Ik Su; Li, Xiuling; Ong, Zhun-Yong; Pop, Eric; Millet, Larry; Gillette, Martha; Popescu, Gabriel

    2010-01-15

    Spatial light interference microscopy (SLIM) is a novel method developed in our laboratory that provides quantitative phase images of transparent structures with a 0.3 nm spatial and 0.03 nm temporal accuracy owing to the white light illumination and its common path interferometric geometry. We exploit these features and demonstrate SLIM's ability to perform topography at a single atomic layer in graphene. Further, using a decoupling procedure that we developed for cylindrical structures, we extract the axially averaged refractive index of semiconductor nanotubes and a neurite of a live hippocampal neuron in culture. We believe that this study will set the basis for novel high-throughput topography and refractometry of man-made and biological nanostructures.

  2. Emission of blue light from hydrogenated amorphous silicon carbide

    Science.gov (United States)

    Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

    1994-04-01

    THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

  3. Enhanced UV light detection using wavelength-shifting properties of Silicon nanoparticles

    International Nuclear Information System (INIS)

    Magill, S.; Xie, J.; Nayfeh, M.; Fizari, M.; Malloy, J.; Maximenko, Y.; Yu, H.

    2015-01-01

    Detection of UV photons is becoming increasingly necessary with the use of noble gases and liquids in elementary particle experiments. Cerenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments all require sensitivity to UV photons. New sensor materials are needed that can directly detect UV photons and/or absorb UV photons and re-emit light in the visible range measurable by existing photosensors. It has been shown that silicon nanoparticles are sensitive to UV light in a wavelength range around ∼ 200 nm. UV light is absorbed and re-emitted at wavelengths in the visible range depending on the size of the nanoparticles. Initial tests of the wavelength-shifting properties of silicon nanoparticles are presented here that indicate by placing a film of nanoparticles in front of a standard visible-wavelength detecting photosensor, the response of the sensor is significantly enhanced at wavelengths < 320 nm

  4. Enhanced four-wave mixing in graphene-silicon slow-light photonic crystal waveguides

    International Nuclear Information System (INIS)

    Zhou, Hao; Gu, Tingyi; McMillan, James F.; Wong, Chee Wei; Petrone, Nicholas; Zande, Arend van der; Hone, James C.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan

    2014-01-01

    We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

  5. Studying of Perovskite Nanoparticles in PMMA Matrix Used As Light Converter for Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lipiński M.

    2017-09-01

    Full Text Available The nanoparticles of CH3NH3PbBr3 hybrid perovskites were synthesized. These perovskite nanoparticles we embedded in polymethyl methacrylate (PMMA in order to obtain the composite, which we used as light converter for silicon solar cells. It was shown that the composite emit the light with the intensity maximum at about 527 nm when exited by a short wavelength (300÷450 nm of light. The silicon solar cells were used to examine the effect of down-conversion (DC process by perovskite nanoparticles embedded in PMMA. For experiments, two groups of monocrystalline silicon solar cells were used. The first one included the solar cells without surface texturization and antireflection coating. The second one included the commercial cells with surface texturization and antireflection coating. In every series of the cells one part of the cells were covered by composite (CH3NH3PbBr3 in PMMA layer and second part of cells by pure PMMA for comparison. It was shown that External Quantum Efficiency EQE of the photovoltaic cells covered by composite (CH3NH3PbBr3 in PMMA layer was improved in both group of the cells but unfortunately the Internal Quantum Efficiency was reduced. This reduction was caused by high absorption of the short wavelength light and reabsorption of the luminescence light. Therefore, the CH3NH3PbBr3 perovskite nanoparticles embedded in PMMA matrix were unable to increase silicon solar cell efficiency in the tested systems.

  6. Strong white light emission from a processed porous silicon and its photoluminescence mechanism

    International Nuclear Information System (INIS)

    Karacali, T.; Cicek, K.

    2011-01-01

    We have prepared various porous silicon (PS) structures with different surface conditions (any combination of oxidation, carbonization as well as thermal annealing) to increase the intensity of photoluminescence (PL) spectrum in the visible range. Strong white light (similar to day-light) emission was achieved by carrying out thermal annealing at 1100 deg. C after surface modification with 1-decene of anodic oxidized PS structures. Temperature-dependent PL measurements were first performed by gradually increasing the sample temperature from 10 to 300 K inside a cryostat. Then, we analyzed the measured spectrum of all prepared samples. After the analysis, we note that throughout entire measured spectrum, only two main peaks corresponding to blue and green-orange emission lines (which can be interpreted by quantum size effect and/or configuration coordinate model) were seem to be predominant for all temperature range. To further reveal and analysis these peaks, finally, measured data were inputted into the formula of activation energy of thermal excitation. We found that activation energies of blue and green-orange lines were approximately 49.3 and 44.6 meV, respectively. - Highlights: →Light emitting devices based on silicon technology are of great interest in illumination and display applications. → We have achieved strong white light (similar to day-light) emission from porous silicon. → The most important impact of carbonization on porous silicon and post annealing is the enhancement of room temperature luminescence.

  7. Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

    Science.gov (United States)

    Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

    2018-04-01

    Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

  8. Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight, so ambient light will increase the noise and may even damage them.

    CERN Multimedia

    Nooren, G.

    2004-01-01

    Installation of the light tight cover for the SSD modules (the modules are behind the aluminium plate). The silicon sensors are sensitive to light tight , so ambient light will increase the noise and may even damage them.

  9. Building blocks for future detectors: Silicon test masses and 1550 nm laser light

    International Nuclear Information System (INIS)

    Schnabel, R; Britzger, M; Burmeister, O; Danzmann, K; Duck, J; Eberle, T; Friedrich, D; Luck, H; Mehmet, M; Steinlechner, S; Willke, B; Brueckner, F; Nawrodt, R

    2010-01-01

    Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection.

  10. Shaping and detecting mid-IR light with a spatial light modulator

    CSIR Research Space (South Africa)

    Maweza, Elijah L

    2016-10-01

    Full Text Available modulator Maweza, Elijah L Gailele, Lucas M Strauss, Hencharl J Litvin, Ihar Forbes, Andrew Dudley, Angela L ABSTRACT: We demonstrate the operation and calibration of a spatial light modulator in the mid-IR region by creating and measuring...

  11. Light management in large area thin-film silicon solar modules

    Czech Academy of Sciences Publication Activity Database

    Losio, P.A.; Caglar, O.; Cashmore, J.S.; Hötzel, J.E.; Ristau, S.; Holovský, Jakub; Remeš, Zdeněk; Sinicco, I.

    2015-01-01

    Roč. 143, Dec (2015), s. 375-385 ISSN 0927-0248 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : micromorph * thin-film silicon solar cells * light management * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  12. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

    2010-12-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

  13. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2010-01-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

  14. Effect of light intensity on the performance of silicon solar cell ...

    African Journals Online (AJOL)

    This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage ...

  15. 3D study of bifacial silicon solar cell under intense light ...

    African Journals Online (AJOL)

    This work presents a three-dimensional study of bifacial silicon solar cell under intense light concentration and under constant magnetic field. This approach is based on the resolution of the minority continuity equation, taking into account the distribution of the electric field in the bulk evaluated as a function of both majority ...

  16. effect of light intensity on the performance of silicon solar cell

    African Journals Online (AJOL)

    (Received 31 January 2017; Revision Accepted 7 April 2017). ABSTRACT. This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt ... level, which is a source of carrier photogeneration,. 123. Martial Zoungrana, Laboratory of ...

  17. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    Science.gov (United States)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  18. Fourth-Order Spatial Correlation of Thermal Light

    International Nuclear Information System (INIS)

    Wen Feng; Zhang Xun; Sun Jia; Song Jian-Ping; Zhang Yan-Peng; Xue Xin-Xin

    2014-01-01

    We investigate the fourth-order spatial correlation properties of pseudo-thermal light in the photon counting regime, and apply the Klyshko advanced-wave picture to describe the process of four-photon coincidence counting measurement. We deduce the theory of a proof-of-principle four-photon coincidence counting configuration, and find that if the four randomly radiated photons come from the same radiation area and are indistinguishable in principle, the fourth-order correlation of them is 24 times larger than that when four photons come from different radiation areas. In addition, we also show that the higher-order spatial correlation function can be decomposed into multiple lower-order correlation functions, and the contrast and visibility of low-order correlation peaks are less than those of higher orders, while the resolutions all are identical. This study may be useful for better understanding the four-photon interference and multi-channel correlation imaging

  19. Optical trapping and tweezing using a spatial light modulator

    CSIR Research Space (South Africa)

    Ismail, Y

    2009-07-01

    Full Text Available using a spatial light modulator Y.Ismail1,2, M. G. Mclaren1,3, A. Forbes1,2,4 1 CSIR National Laser Centre 2 School of Physics, University of KwaZulu-Natal 3 School of Physics, University of the Witwatersrand 4 School of Physics, University... of Stellenbosch Presented at the 2009 South African Institute of Physics Annual Conference University of KwaZulu-Natal Durban, South Africa 6-10 July 2009 Optical tweezing is based on the manipulation of micron sized particles in 3 dimensions 100X...

  20. Aberration compensation using a spatial light modulator LCD

    International Nuclear Information System (INIS)

    Amezquita, R; Rincon, O; Torres, Y M

    2011-01-01

    The dynamic correction of aberrations introduced in optical systems have been a widely discussed topic in the past 10 years. Adaptive optics is the most important developed field where the Shack-Hartmann sensors and deformable mirrors are used for the measurement and correction of wavefronts. In this paper, an interferometric set-up which uses a Spatial Light Modulator (SLM) as an active element is proposed. Using this SLM a procedure for the compensation of all phase aberrations present in the experimental setup is shown.

  1. Spatial filtering of light by chirped photonic crystals

    International Nuclear Information System (INIS)

    Staliunas, Kestutis; Sanchez-Morcillo, Victor J.

    2009-01-01

    We propose an efficient method for spatial filtering of light beams by propagating them through two-dimensional (also three dimensional) chirped photonic crystals, i.e., through the photonic structures with fixed transverse lattice period and with the longitudinal lattice period varying along the direction of the beam propagation. We prove the proposed idea by numerically solving the paraxial propagation equation in refraction-index-modulated media and we evaluate the efficiency of the process by harmonic-expansion analysis. The technique can be also applied for filtering (for cleaning) of the packages of atomic waves (Bose condensates), also to improve the directionality of acoustic and mechanical waves.

  2. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  3. Plasmonic Light Scattering in Textured Silicon Solar Cells with Indium Nanoparticles from Normal to Non-Normal Light Incidence

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-07-01

    Full Text Available In this study, we sought to improve the light trapping of textured silicon solar cells using the plasmonic light scattering of indium nanoparticles (In NPs of various dimensions. The light trapping modes of textured-silicon surfaces with and without In NPs were investigated at an angle of incidence (AOI ranging from 0° to 75°. The optical reflectance, external quantum efficiency (EQE, and photovoltaic performance were first characterized under an AOI of 0°. We then compared the EQE and photovoltaic current density-voltage (J-V as a function of AOI in textured silicon solar cells with and without In NPs. We observed a reduction in optical reflectance and an increase in EQE when the cells textured with pyramidal structures were coated with In NPs. We also observed an impressive increase in the average weighted external quantum efficiency (∆EQEw and short-circuit current-density (∆Jsc in cells with In NPs when illuminated under a higher AOI. The ∆EQEw values of cells with In NPs were 0.37% higher than those without In NPs under an AOI of 0°, and 3.48% higher under an AOI of 75°. The ∆Jsc values of cells with In NPs were 0.50% higher than those without In NPs under an AOI of 0°, and 4.57% higher under an AOI of 75°. The application of In NPs clearly improved the light trapping effects. This can be attributed to the effects of plasmonic light-scattering over the entire wavelength range as well as an expanded angle of incident light.

  4. Epitaxial Growth of Germanium on Silicon for Light Emitters

    Directory of Open Access Journals (Sweden)

    Chengzhao Chen

    2012-01-01

    Full Text Available This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

  5. Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

    Science.gov (United States)

    Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

    2017-08-31

    Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI 3 ) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

  6. Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

    Science.gov (United States)

    Deng, Can; Tan, Xinyu; Jiang, Lihua; Tu, Yiteng; Ye, Mao; Yi, Yasha

    2018-01-01

    Structural design with high light absorption is the key challenge for thin film solar cells because of its poor absorption. In this paper, the light-trapping performance of silicon inclined nanohole arrays is systematically studied. The finite difference time domain method is used to calculate the optical absorption of different inclination angles in different periods and diameters. The results indicate that the inclined nanoholes with inclination angles between 5° and 45° demonstrate greater light-trapping ability than their counterparts of the vertical nanoholes, and they also show that by choosing the optimal parameters for the inclined nanoholes, a 31.2 mA/cm2 short circuit photocurrent density could be achieved, which is 10.25% higher than the best vertical nanohole system and 105.26% higher than bare silicon with a thickness of 2330 nm. The design principle proposed in this work gives a guideline for choosing reasonable parameters in the application of solar cells.

  7. Recent advances in IR liquid crystal spatial light modulators

    Science.gov (United States)

    Peng, Fenglin; Twieg, Robert J.; Wu, Shin-Tson

    2015-09-01

    Liquid crystal (LC) is an amazing class of electro-optic media; its applications span from visible to infrared, millimeter wave, and terahertz regions. In the visible and short-wavelength infrared (SWIR) regions, most LCs are highly transparent. However, to extend the electro-optic application of LCs into MWIR and LWIR, several key technical challenges have to be overcome: (1) low absorption loss, (2) high birefringence, (3) low operation voltage, and (4) fast response time. In the MWIR and LWIR regions, several fundamental molecular vibration bands and overtones exist, which contribute to high absorption loss. The absorbed light turns to heat and then alters the birefringence locally, which in turns causes spatially non-uniform phase modulation. To suppress the optical loss, several approaches have been investigated: (1) Employing thin cell gap by choosing a high birefringence LC mixture; (2) Shifting the absorption bands outside the spectral region of interest by deuteration, fluorination, or chlorination; (3) Reducing the overtone absorption by using a short alkyl chain. In this paper, we report some recently developed chlorinated LC compounds and mixtures with low absorption loss in the SWIR and MWIR regions. To achieve fast response time, we demonstrated a polymer network liquid crystal with 2π phase change at MWIR and response time less than 5 ms. Approaches to extend such a liquid crystal spatial light modulator to long-wavelength infrared will be discussed.

  8. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

    International Nuclear Information System (INIS)

    Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

    2001-01-01

    A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

  9. Speckless head-up display on two spatial light modulators

    Science.gov (United States)

    Siemion, Andrzej; Ducin, Izabela; Kakarenko, Karol; Makowski, Michał; Siemion, Agnieszka; Suszek, Jarosław; Sypek, Maciej; Wojnowski, Dariusz; Jaroszewicz, Zbigniew; Kołodziejczyk, Andrzej

    2010-12-01

    There is a continuous demand for the computer generated holograms to give an almost perfect reconstruction with a reasonable cost of manufacturing. One method of improving the image quality is to illuminate a Fourier hologram with a quasi-random, but well known, light field phase distribution. It can be achieved with a lithographically produced phase mask. Up to date, the implementation of the lithographic technique is relatively complex and time and money consuming, which is why we have decided to use two Spatial Light Modulators (SLM). For the correctly adjusted light polarization a SLM acts as a pure phase modulator with 256 adjustable phase levels between 0 and 2π. The two modulators give us an opportunity to use the whole surface of the device and to reduce the size of the experimental system. The optical system with one SLM can also be used but it requires dividing the active surface into halves (one for the Fourier hologram and the second for the quasi-random diffuser), which implies a more complicated optical setup. A larger surface allows to display three Fourier holograms, each for one primary colour: red, green and blue. This allows to reconstruct almost noiseless colourful dynamic images. In this work we present the results of numerical simulations of image reconstructions with the use of two SLM displays.

  10. Ultraviolet Plasmonic Aluminium Nanoparticles for Highly Efficient Light Incoupling on Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Yinan Zhang

    2016-05-01

    Full Text Available Plasmonic metal nanoparticles supporting localized surface plasmon resonances have attracted a great deal of interest in boosting the light absorption in solar cells. Among the various plasmonic materials, the aluminium nanoparticles recently have become a rising star due to their unique ultraviolet plasmonic resonances, low cost, earth-abundance and high compatibility with the complementary metal-oxide semiconductor (CMOS manufacturing process. Here, we report some key factors that determine the light incoupling of aluminium nanoparticles located on the front side of silicon solar cells. We first numerically study the scattering and absorption properties of the aluminium nanoparticles and the influence of the nanoparticle shape, size, surface coverage and the spacing layer on the light incoupling using the finite difference time domain method. Then, we experimentally integrate 100-nm aluminium nanoparticles on the front side of silicon solar cells with varying silicon nitride thicknesses. This study provides the fundamental insights for designing aluminium nanoparticle-based light trapping on solar cells.

  11. Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

    International Nuclear Information System (INIS)

    Sokolovskij, R; Liu, P; Van Zeijl, H W; Mimoun, B; Zhang, G Q

    2015-01-01

    Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies. (paper)

  12. Spatial and Angular Resolution Enhancement of Light Fields Using Convolutional Neural Networks

    Science.gov (United States)

    Gul, M. Shahzeb Khan; Gunturk, Bahadir K.

    2018-05-01

    Light field imaging extends the traditional photography by capturing both spatial and angular distribution of light, which enables new capabilities, including post-capture refocusing, post-capture aperture control, and depth estimation from a single shot. Micro-lens array (MLA) based light field cameras offer a cost-effective approach to capture light field. A major drawback of MLA based light field cameras is low spatial resolution, which is due to the fact that a single image sensor is shared to capture both spatial and angular information. In this paper, we present a learning based light field enhancement approach. Both spatial and angular resolution of captured light field is enhanced using convolutional neural networks. The proposed method is tested with real light field data captured with a Lytro light field camera, clearly demonstrating spatial and angular resolution improvement.

  13. III–V quantum light source and cavity-QED on Silicon

    Science.gov (United States)

    Luxmoore, I. J.; Toro, R.; Pozo-Zamudio, O. Del; Wasley, N. A.; Chekhovich, E. A.; Sanchez, A. M.; Beanland, R.; Fox, A. M.; Skolnick, M. S.; Liu, H. Y.; Tartakovskii, A. I.

    2013-01-01

    Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III–V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III–V material grown directly on silicon substrates. The high quality of the III–V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. PMID:23393621

  14. III-V quantum light source and cavity-QED on silicon.

    Science.gov (United States)

    Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

    2013-01-01

    Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

  15. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  16. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  17. Measurement of the spatial resolution of wide-pitch silicon strip detectors with large incident angle

    International Nuclear Information System (INIS)

    Kawasaki, T.; Hazumi, M.; Nagashima, Y.

    1996-01-01

    As a part of R ampersand D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0 degrees to 75 degrees. These detectors have strips with pitches of 50, 125 and 250 μm on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 μm for normal incidence with a pitch of 50 μm, and 29 μm for incident angle of 75 degrees with a pitch of 250μm

  18. Light trapping with plasmonic back contacts in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paetzold, Ulrich Wilhelm

    2013-02-08

    Trapping light in silicon solar cells is essential as it allows an increase in the absorption of incident sunlight in optically thin silicon absorber layers. This way, the costs of the solar cells can be reduced by lowering the material consumption and decreasing the physical constraints on the material quality. In this work, plasmonic light trapping with Ag back contacts in thin-film silicon solar cells is studied. Solar cell prototypes with plasmonic back contacts are presented along with optical simulations of these devices and general design considerations of plasmonic back contacts. Based on three-dimensional electromagnetic simulations, the conceptual design of plasmonic nanostructures on Ag back contacts in thin-film silicon solar cells is studied in this work. Optimizations of the nanostructures regarding their ability to scatter incident light at low optical losses into large angles in the silicon absorber layers of the thin-film silicon solar cells are presented. Geometrical parameters as well as the embedding dielectric layer stack of the nanostructures on Ag layers are varied. Periodic as well as isolated hemispherical Ag nanostructures of dimensions above 200 nm are found to scatter incident light at high efficiencies and low optical losses. Hence, these nanostructures are of interest for light trapping in solar cells. In contrast, small Ag nanostructures of dimension below 100 nm are found to induce optical losses. At the surface of randomly textured Ag back contacts small Ag nanostructures exist which induce optical losses. In this work, the relevance of these localized plasmon induced optical losses as well as optical losses caused by propagating plasmons are investigated with regard to the reflectance of the textured back contacts. In state-of-the-art solar cells, the plasmon-induced optical losses are shifted out of the relevant wavelength range by incorporating a ZnO:Al interlayer of low refractive index at the back contact. The additional but

  19. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H; Naddaf, M; Jazmati, A

    2008-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  20. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

    2008-12-21

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  1. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    International Nuclear Information System (INIS)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2009-01-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

  2. Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

    Science.gov (United States)

    Hamadeh, H.; Naddaf, M.; Jazmati, A.

    2008-12-01

    Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

  3. Silicon Mie resonators for highly directional light emission from monolayer MoS2

    Science.gov (United States)

    Cihan, Ahmet Fatih; Curto, Alberto G.; Raza, Søren; Kik, Pieter G.; Brongersma, Mark L.

    2018-05-01

    Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.

  4. Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

    Science.gov (United States)

    Xiao, Sanshui; Mortensen, Niels A.

    2012-10-01

    Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

  5. Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Pelant, Ivan; Valenta, J.; Kromka, Alexander; Elliman, R. G.

    2017-01-01

    Roč. 7, č. 1 (2017), s. 1-8, č. článku 5763. ISSN 2045-2322 R&D Projects: GA ČR GJ16-09692Y; GA MŠk(CZ) LD15003 Institutional support: RVO:68378271 Keywords : photonic crystal slab * silicon nanocrystals * light emission Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.259, year: 2016

  6. Electro-optical properties of dislocations in silicon and their possible application for light emitters

    Energy Technology Data Exchange (ETDEWEB)

    Arguirov, Tzanimir Vladimirov

    2007-10-14

    This thesis addresses the electro-optical properties of silicon, containing dislocations. The work demonstrates that dislocation specific radiation may provide a means for optical diagnostics of solar cell grade silicon. It provides insight into the mechanisms governing the dislocation recombination activity, their radiation, and how are they influenced by other defects present in silicon. We demonstrate that photoluminescence mapping is useful for monitoring the recombination activity in solar cell grade silicon and can be applied for identification of contaminants, based on their photoluminescence signatures. It is shown that the recombination at dislocations is strongly influenced by the presence of metals at the dislocation sites. The dislocation radiation activity correlates with their electrical activity. It is shown that the dislocation and band-to-band luminescence are essentially anti-correlated. {beta}FeSi{sub 2} precipitates, with a luminescence at 0.8 eV, were detected within the grains of block cast materials. They exhibit a characteristic feature of quantum dots, namely blinking. The second aspect of the thesis concerns the topic of silicon based light emitters for on-chip optical interconnects. The goal is an enhancement of sub-band-gap or band-to-band radiation by controlled formation of dislocation-rich areas in microelectronics-grade silicon as well as understanding of the processes governing such enhancement. For light emitters based on band-to-band emission it is shown, that internal quantum efficiency of nearly 2 % can be achieved, but the emission is essentially generated in the bulk of the wafer. On the other hand, light emitters utilizing the emission from dislocation-rich areas of a well localized wafer depth were explored. Three different methods for reproducible formation of a dislocation-rich region beneath the wafer surface were investigated and evaluated in view of their room temperature sub-band-gap radiation: (1) silicon implantation

  7. Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

    Science.gov (United States)

    Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

    2013-01-01

    When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

  8. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji

    2017-06-24

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar cells increase their operating voltages and thus their conversion efficiencies during light exposure. We found that this performance increase is due to improved passivation of the a-Si:H/c-Si interface and is induced by injected charge carriers (either by light soaking or forward-voltage biasing of the device). Here, we discuss this counterintuitive behavior and establish that: (i) the performance increase is observed in solar cells as well as modules; (ii) this phenomenon requires the presence of doped a-Si:H films, but is independent from whether light is incident from the a-Si:H(p) or the a-Si:H(n) side; (iii) UV and blue photons do not play a role in this effect; (iv) the performance increase can be observed under illumination intensities as low as 20Wm (0.02-sun) and appears to be almost identical in strength when under 1-sun (1000Wm); (v) the underlying physical mechanism likely differs from annealing-induced surface passivation.

  9. Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu

    light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... rendering performance and a much longer material lifetime compared with the commonly used wavelength-conversion material like Phosphors. In this thesis, f-SiC with different doping concentrations are analyzed and optimized in order to enhance the quantum efficiency. On the other hand, semiconductor...

  10. Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon

    OpenAIRE

    Park, H. R.; Liu, J. Z.; Roca i Cabarrocas, P.; Maruyama, A.; Isomura, M.; Wagner, S.; Abelson, J. R.; Finger, F.

    2008-01-01

    We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlat...

  11. All-silicon Michelson instrument on chip: Distance and surface profile measurement and prospects for visible light spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Malak, M.; Marty, F.; Bourouina, T. [Universite Paris-Est, Laboratoire ESYCOM, ESIEE Paris, Cite Descartes, 2 Boulevard Blaise Pascal, 93162 Noisy-le-Grand Cedex (France); Nouira, H.; Vailleau, G. [Laboratoire National de Metrologie et d' Essais, 1 rue Gaston Boissier, 75724 Paris Cedex 15 (France)

    2013-04-08

    A miniature Michelson interferometer is analyzed theoretically and experimentally. The fabricated micro-interferometer is incorporated at the tip of a monolithic silicon probe to achieve contactless distance measurements and surface profilometry. For infrared operation, two approaches are studied, based on the use of monochromatic light and wavelength sweep, respectively. A theoretical model is devised to depict the system characteristics taking into account Gaussian beam divergence and light spot size. Furthermore, preliminary results using visible light demonstrate operation of the probe as a visible light spectrometer, despite silicon absorbance, thanks to the micrometer thickness involved in the beam splitter.

  12. All-silicon Michelson instrument on chip: Distance and surface profile measurement and prospects for visible light spectrometry

    International Nuclear Information System (INIS)

    Malak, M.; Marty, F.; Bourouina, T.; Nouira, H.; Vailleau, G.

    2013-01-01

    A miniature Michelson interferometer is analyzed theoretically and experimentally. The fabricated micro-interferometer is incorporated at the tip of a monolithic silicon probe to achieve contactless distance measurements and surface profilometry. For infrared operation, two approaches are studied, based on the use of monochromatic light and wavelength sweep, respectively. A theoretical model is devised to depict the system characteristics taking into account Gaussian beam divergence and light spot size. Furthermore, preliminary results using visible light demonstrate operation of the probe as a visible light spectrometer, despite silicon absorbance, thanks to the micrometer thickness involved in the beam splitter.

  13. Fabrication and optical characterization of light trapping silicon nanopore and nanoscrew devices

    International Nuclear Information System (INIS)

    Jin, Hyunjong; Logan Liu, G

    2012-01-01

    We have fabricated nanotextured Si substrates that exhibit controllable optical reflection intensities and colors. Si nanopore has a photon trapping nanostructure but has abrupt changes in the index of refraction displaying a darkened specular reflection. Nanoscrew Si shows graded refractive-index photon trapping structures that enable diffuse reflection to be as low as 2.2% over the visible wavelengths. By tuning the 3D nanoscale silicon structure, the optical reflection peak wavelength and intensity are changed in the wavelength range of 300–800 nm, making the surface have different reflectivity and apparent colors. The relation between the surface optical properties with the spatial features of the photon trapping nanostructures is examined. Integration of photon trapping structures with planar Si structure on the same substrate is also demonstrated. The tunable photon trapping silicon structures have potential applications in enhancing the performance of semiconductor photoelectric devices. (paper)

  14. Advanced methods for light trapping in optically thin silicon solar cells

    Science.gov (United States)

    Nagel, James Richard

    2011-12-01

    The field of light trapping is the study of how best to absorb light in a thin film of material when most light either reflects away at the surface or transmits straight through to the other side. This has tremendous application to the field of photovoltaics where thin silicon films can be manufactured cheaply, but also fail to capture all of the available photons in the solar spectrum. Advancements in light trapping therefore bring us closer to the day when photovoltaic devices may reach grid parity with traditional fossil fuels on the electrical energy market. This dissertation advances our understanding of light trapping by first modeling the effects of loss in planar dielectric waveguides. The mathematical framework developed here can be used to model any arbitrary three-layer structure with mixed gain or loss and then extract the total field solution for the guided modes. It is found that lossy waveguides possess a greater number of eigenmodes than their lossless counterparts, and that these "loss guided" modes attenuate much more rapidly than conventional modes. Another contribution from this dissertation is the exploration of light trapping through the use of dielectric nanospheres embedded directly within the active layer of a thin silicon film. The primary benefit to this approach is that the device can utilize a surface nitride layer serving as an antireflective coating while still retaining the benefits of light trapping within the film. The end result is that light trapping and light injection are effectively decoupled from each other and may be independently optimized within a single photovoltaic device. The final contribution from this work is a direct numerical comparison between multiple light trapping schemes. This allows us to quantify the relative performances of various design techniques against one another and objectively determine which ideas tend to capture the most light. Using numerical simulation, this work directly compares the absorption

  15. Performance evaluation of a sub-millimeter spatial resolution PET detector module using a digital silicon photomultiplier coupled LGSO array

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Hyun Tae [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Choi, Yong, E-mail: ychoi@sogang.ac.kr [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Kim, Kyu Bom; Lee, Sangwon [Molecular Imaging Research & Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Yamamoto, Seiichi [Department of Medical Technology, Nagoya University Graduate School of Medicine, Nagoya (Japan); Yeom, Jung-Yeol, E-mail: jungyeol@korea.ac.kr [School of Biomedical Engineering, Korea University, Seoul (Korea, Republic of)

    2017-02-21

    In positron emission tomography (PET) for breast, brain and small animal imaging, the spatial resolution of a PET detector is crucial to obtain high quality PET images. In this study, a PET detector for sub-millimeter spatial resolution imaging purpose was assembled using 4×4 pixels of a digital silicon photomultiplier (dSiPM, DPC-3200-22-44, Philips) coupled with a 15×15 LGSO array with BaSO{sub 4} reflector, and a 1 mm thick acrylic light guide for light distribution between the dSiPM pixels. The active area of each dSiPM pixel was 3.2×3.9 mm{sup 2} and the size of each LGSO scintillator element was 0.7×0.7×6 mm{sup 3}. In this paper, we experimentally demonstrated the performance of the PET detector by measuring the energy resolution, 2D flood map, peak to valley (P/V) ratio, and coincidence resolving time (CRT). All measurements were performed at a temperature of 10±1 ℃. The average energy resolution was 15.6% (without correcting for saturation effects) at 511 keV and the best CRT was 242±5 ps. The 2D flood map obtained with an energy window of 400–600 keV demonstrated clear identification of all pixels, and the average P/V ratio of the X- and Y-directions were 7.31 and 7.81, respectively. This study demonstrated that the PET detector could be suitable for application in high resolution PET while achieving good timing resolution.

  16. Effect of light aging on silicone-resin bond strength in maxillofacial prostheses.

    Science.gov (United States)

    Polyzois, Gregory; Pantopoulos, Antonis; Papadopoulos, Triantafillos; Hatamleh, Muhanad

    2015-04-01

    The aim of this study was to investigate the effect of accelerated light aging on bond strength of a silicone elastomer to three types of denture resin. A total of 60 single lap joint specimens were fabricated with auto-, heat-, and photopolymerized (n = 20) resins. An addition-type silicone elastomer (Episil-E) was bonded to resins treated with the same primer (A330-G). Thirty specimens served as controls and were tested after 24 hours, and the remaining were aged under accelerated exposure to daylight for 546 hours (irradiance 765 W/m(2) ). Lap shear joint tests were performed to evaluate bond strength at 50 mm/min crosshead speed. Two-way ANOVA and Tukey's test were carried out to detect statistical significance (p Accelerated light aging for 546 hours affects the bond strength of an addition-type silicone elastomer to three different denture resins. The bond strength significantly increased after aging for photo- and autopolymerized resins. All the bonds failed adhesively. © 2014 by the American College of Prosthodontists.

  17. White light scanner-based repeatability of 3-dimensional digitizing of silicon rubber abutment teeth impressions.

    Science.gov (United States)

    Jeon, Jin-Hun; Lee, Kyung-Tak; Kim, Hae-Young; Kim, Ji-Hwan; Kim, Woong-Chul

    2013-11-01

    The aim of this study was to evaluate the repeatability of the digitizing of silicon rubber impressions of abutment teeth by using a white light scanner and compare differences in repeatability between different abutment teeth types. Silicon rubber impressions of a canine, premolar, and molar tooth were each digitized 8 times using a white light scanner, and 3D surface models were created using the point clouds. The size of any discrepancy between each model and the corresponding reference tooth were measured, and the distribution of these values was analyzed by an inspection software (PowerInspect 2012, Delcamplc., Birmingham, UK). Absolute values of discrepancies were analyzed by the Kruskal-Wallis test and multiple comparisons (α=.05). The discrepancy between the impressions for the canine, premolar, and molar teeth were 6.3 µm (95% confidence interval [CI], 5.4-7.2), 6.4 µm (95% CI, 5.3-7.6), and 8.9 µm (95% CI, 8.2-9.5), respectively. The discrepancy of the molar tooth impression was significantly higher than that of other tooth types. The largest variation (as mean [SD]) in discrepancies was seen in the premolar tooth impression scans: 26.7 µm (95% CI, 19.7-33.8); followed by canine and molar teeth impressions, 16.3 µm (95% CI, 15.3-17.3), and 14.0 µm (95% CI, 12.3-15.7), respectively. The repeatability of the digitizing abutment teeth's silicon rubber impressions by using a white light scanner was improved compared to that with a laser scanner, showing only a low mean discrepancy between 6.3 µm and 8.9 µm, which was in an clinically acceptable range. Premolar impression with a long and narrow shape showed a significantly larger discrepancy than canine and molar impressions. Further work is needed to increase the digitizing performance of the white light scanner for deep and slender impressions.

  18. Graphene metamaterial spatial light modulator for infrared single pixel imaging.

    Science.gov (United States)

    Fan, Kebin; Suen, Jonathan Y; Padilla, Willie J

    2017-10-16

    High-resolution and hyperspectral imaging has long been a goal for multi-dimensional data fusion sensing applications - of interest for autonomous vehicles and environmental monitoring. In the long wave infrared regime this quest has been impeded by size, weight, power, and cost issues, especially as focal-plane array detector sizes increase. Here we propose and experimentally demonstrated a new approach based on a metamaterial graphene spatial light modulator (GSLM) for infrared single pixel imaging. A frequency-division multiplexing (FDM) imaging technique is designed and implemented, and relies entirely on the electronic reconfigurability of the GSLM. We compare our approach to the more common raster-scan method and directly show FDM image frame rates can be 64 times faster with no degradation of image quality. Our device and related imaging architecture are not restricted to the infrared regime, and may be scaled to other bands of the electromagnetic spectrum. The study presented here opens a new approach for fast and efficient single pixel imaging utilizing graphene metamaterials with novel acquisition strategies.

  19. Design and fabrication of a TiO2/nano-silicon composite visible light photocatalyst

    International Nuclear Information System (INIS)

    Lin, C.Y.; Fang, Y.K.; Kuo, C.H.; Chen, S.F.; Lin, C.-S.; Chou, T.H.; Lee, Y.-H.; Lin, J.-C.; Hwang, S.-B.

    2006-01-01

    Nano-silicon (nc-Si) was utilized as the charges generator to promote the photocatalytic and super-hydrophilic reactivity of TiO 2 film under visible light irradiation. The photocatalytic ability of TiO 2 /nc-Si composite photocatalyst was evaluated by a set of experiments to photodecompose 100 ppm methylene blue (MB) in aqueous solution. And the super-hydrophilic property was characterized by measuring the water droplet contacts angle, under visible light irradiation in atmospheric air and at room temperature. Under 100 mW/cm 2 visible light irradiation, the droplet contact angles were reduced to 0 deg. within 4 h with nc-Si charge generator. Additionally, the rate constant of MB photo-degradation was promoted 6.6 times

  20. Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

    International Nuclear Information System (INIS)

    Zhou, Hao; Gu, Tingyi; McMillan, James F.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan; Wong, Chee Wei

    2016-01-01

    We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

  1. Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

    Science.gov (United States)

    Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2011-10-10

    We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

  2. Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H PIN solar cells. To explain the particular light-soaking behavior of such cells – namely an increase of the open circuit voltage (Voc and a rapid drop of the short circuit current density (Jsc – we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns. Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.

  3. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    Directory of Open Access Journals (Sweden)

    Ming-Jay Yang

    2017-03-01

    Full Text Available We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  4. Enhanced light absorption of silicon solar cells with dielectric nanostructured back reflector

    Science.gov (United States)

    Ren, Rui; Zhong, Zheng

    2018-06-01

    This paper investigates the light absorption property of nanostructured dielectric reflectors in silicon thin film solar cells using numerical simulation. Flat thin film solar cell with ZnO nanostructured back reflector can produce comparable photocurrent to the control model with Ag nanostructured back reflector. Furthermore, when it is integrated with nano-pillar surface decoration, a photocurrent density of 29.5 mA/cm2 can be achieved, demonstrating a photocurrent enhancement of 5% as compared to the model with Ag nanostructured back reflector.

  5. A spatial interpretation of emerging superconductivity in lightly doped cuprates

    Science.gov (United States)

    Deutscher, Guy; de Gennes, Pierre-Gilles

    The formation of domains comprising alternating 'hole rich' and 'hole poor' ladders recently observed by Scanning Tunneling Microscopy by Kohsaka et al., on lightly hole doped cuprates, is interpreted in terms of an attractive mechanism which favors the presence of doped holes on Cu sites located each on one side of an oxygen atom. This mechanism leads to a geometrical pattern of alternating hole-rich and hole-poor ladders with a periodicity equal to 4 times the lattice spacing in the CuO plane, as observed experimentally. Cuprates supraconducteurs peu dopés : une interprétation des structures spatiales. Des arrangements électroniques réguliers ont été détectés récemment par Kohsaka et al. dans des cuprates sous dopés (via une sonde tunnel locale). Certaines paires Cu-O-Cu sont « actives », et forment une échelle. Les autres sites sont peu actifs. Pour expliquer ces structures, nous postulons que, lorsqu'une liaison Cu-O-Cu est occupée par deux trous, la distance (Cu-Cu) rétrécit et l'intégrale de transfert (t) est fortement augmentée. Ceci peut engendrer des paires localisées (réelles ou virtuelles). Aux taux de dopage étudiés, la période de répétition vaudrait 4 mailles élémentaires.

  6. Surface potential on gold nanodisc arrays fabricated on silicon under light irradiation

    Science.gov (United States)

    Ezaki, Tomotarou; Matsutani, Akihiro; Nishioka, Kunio; Shoji, Dai; Sato, Mina; Okamoto, Takayuki; Isobe, Toshihiro; Nakajima, Akira; Matsushita, Sachiko

    2018-06-01

    This paper proposes Kelvin probe force microscopy (KFM) as a new measurement method of plasmon phenomenon. The surface potential of two arrays, namely, a monomeric array and a tetrameric array, of gold nanodiscs (600 nm diameter) on a silicon substrate fabricated by electron beam lithography was investigated by KFM with the view point of irradiation light wavelength change. In terms of the value of the surface potential, contrasting behaviour, a negative shift in the monomeric disc array and a positive shift in the tetrameric disc array, was observed by light irradiation. This interesting behaviour is thought to be related to a difference in localised plasmons caused by the disc arrangement and was investigated from various viewpoints, including Rayleigh anomalies. Finally, this paper reveals that KFM is powerful not only to investigate the plasmonic behaviour but also to predict the electron transportation.

  7. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

    2017-01-01

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

  8. Superior light trapping in thin film silicon solar cells through nano imprint lithography

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W.J.; Dorenkamper, M.S.; Schropp, R.E.I.; Pex, P.P.A.C.

    2013-10-15

    ECN and partners have developed a fabrication process based on nanoimprint lithography (NIL) of textures for light trapping in thin film solar cells such as thin-film silicon, OPV, CIGS and CdTe. The process can be applied in roll-to-roll mode when using a foil substrate or in roll-to-plate mode when using a glass substrate. The lacquer also serves as an electrically insulating layer for cells if steel foil is used as substrate, to enable monolithic series interconnection. In this paper we will show the superior light trapping in thin film silicon solar cells made on steel foil with nanotextured back contacts. We have made single junction a-Si and {mu}c-Si and a-Si/{mu}c-Si tandem cells, where we applied several types of nano-imprints with random and periodic structures. We will show that the nano-imprinted back contact enables more than 30% increase of current in comparison with non-textured back contacts and that optimized periodic textures outperform state-of-the-art random textures. For a-Si cells we obtained Jsc of 18 mA/cm{sup 2} and for {mu}c-Si cells more than 24 mA/cm{sup 2}. Tandem cells with a total Si absorber layer thickness of only 1350 nm have an initial efficiency of 11%.

  9. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

    2017-01-01

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

  10. Experimental study of the organic light emitting diode with a p-type silicon anode

    International Nuclear Information System (INIS)

    Ma, G.L.; Xu, A.G.; Ran, G.Z.; Qiao, Y.P.; Zhang, B.R.; Chen, W.X.; Dai, L.; Qin, G.G.

    2006-01-01

    We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO 2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m 2 at 17 V and 1800 mA/cm 2 , the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO 2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode

  11. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  12. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  13. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  14. Light-trapping optimization in wet-etched silicon photonic crystal solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eyderman, Sergey, E-mail: sergey.eyderman@utoronto.ca [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); John, Sajeev [Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada); Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Hafez, M.; Al-Ameer, S. S.; Al-Harby, T. S.; Al-Hadeethi, Y. [Department of Physics, King Abdul-Aziz University, Jeddah (Saudi Arabia); Bouwes, D. M. [iX-factory GmbH, Konrad Adenauer–Allee 11, 44263 Dortmund (Germany)

    2015-07-14

    We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

  15. Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

    Directory of Open Access Journals (Sweden)

    José Ernesto Nájera-Carpio

    2015-07-01

    Full Text Available In this work, the irreversible processes in light heating of Silicon (Si and Germanium (Ge thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

  16. Light extraction from GaN-based LED structures on silicon-on-insulator substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, S.; Teo, S.L.; Lin, V.K.X.; Chen, M.F. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 117602 (Singapore); Dadgar, A.; Krost, A. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany); AZZURRO Semiconductors AG, Universitaetsplatz 1, 39016 Magdeburg (Germany); Christen, J. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany)

    2010-01-15

    Nano-patterning of GaN-based devices is a promising technology in the development of high output power devices. Recent researches have been focused on the realization of two-dimensional (2D) photonic crystal (PhC) structure to improve light extraction efficiency and to control the direction of emission. In this study, we have demonstrated improved light extraction from green light emitting diode (LED) structures on thin silicon-on-insulator (SOI) substrates using surface nanopatterning. Scanning electron microscopy (SEM) is used to probe the size, shape, and etch depth of nano-patterns on the LED surfaces. Different types of nanopatterns were created by e-beam lithography and inductively coupled plasma etching. The LED structures after post processing are studied by photoluminescence (PL) measurements. The GaN nanophotonic structures formed by ICP etching led to more than five-fold increase in the intensity of the green emission. The improved light extraction is due to the combination of SOI substrate reflectivity and photonic structures on top GaN LED surfaces. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Managing the spatial properties and photon correlations in squeezed non-classical twisted light

    Science.gov (United States)

    Zakharov, R. V.; Tikhonova, O. V.

    2018-05-01

    Spatial photon correlations and mode content of the squeezed vacuum light generated in a system of two separated nonlinear crystals is investigated. The contribution of both the polar and azimuthal modes with non-zero orbital angular momentum is analyzed. The control and engineering of the spatial properties and degree of entanglement of the non-classical squeezed light by changing the distance between crystals and pump parameters is demonstrated. Methods for amplification of certain spatial modes and managing the output mode content and intensity profile of quantum twisted light are suggested.

  18. Blue light filtered white light induces depression-like responses and temporary spatial learning deficits in rats.

    Science.gov (United States)

    Meng, Qinghe; Lian, Yuzheng; Jiang, Jianjun; Wang, Wei; Hou, Xiaohong; Pan, Yao; Chu, Hongqian; Shang, Lanqin; Wei, Xuetao; Hao, Weidong

    2018-04-18

    Ambient light has a vital impact on mood and cognitive functions. Blue light has been previously reported to play a salient role in the antidepressant effect via melanopsin. Whether blue light filtered white light (BFW) affects mood and cognitive functions remains unclear. The present study aimed to investigate whether BFW led to depression-like symptoms and cognitive deficits including spatial learning and memory abilities in rats, and whether they were associated with the light-responsive function in retinal explants. Male Sprague-Dawley albino rats were randomly divided into 2 groups (n = 10) and treated with a white light-emitting diode (LED) light source and BFW light source, respectively, under a standard 12 : 12 h L/D condition over 30 days. The sucrose consumption test, forced swim test (FST) and the level of plasma corticosterone (CORT) were employed to evaluate depression-like symptoms in rats. Cognitive functions were assessed by the Morris water maze (MWM) test. A multi-electrode array (MEA) system was utilized to measure electro-retinogram (ERG) responses induced by white or BFW flashes. The effect of BFW over 30 days on depression-like responses in rats was indicated by decreased sucrose consumption in the sucrose consumption test, an increased immobility time in the FST and an elevated level of plasma CORT. BFW led to temporary spatial learning deficits in rats, which was evidenced by prolonged escape latency and swimming distances in the spatial navigation test. However, no changes were observed in the short memory ability of rats treated with BFW. The micro-ERG results showed a delayed implicit time and reduced amplitudes evoked by BFW flashes compared to the white flash group. BFW induces depression-like symptoms and temporary spatial learning deficits in rats, which might be closely related to the impairment of light-evoked output signals in the retina.

  19. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  20. The experimental method of measurement for spatial distribution of full aperture backscatter light by circular PIN-array

    International Nuclear Information System (INIS)

    Zhao Xuefeng; Wang Chuanke; Hu Feng; Kuang Longyu; Wang Zhebin; Li Sanwei; Liu Shengye; Jiang Gang

    2011-01-01

    The spatial distribution of backscatter light is very important for understanding the production of backscatter light. The experimental method of spatial distribution of full aperture backscatter light is based on the circular PIN array composed of concentric orbicular multi-PIN detectors. The image of backscatter light spatial distribution of full aperture SBS is obtained by measuring spatial distribution of full aperture backscatter light using the method in the experiment of laser hohlraum targets interaction at 'Shenguang II'. A preliminary method to measure spatial distribution of full aperture backscatter light is established. (authors)

  1. Light-Ion Production in the Interaction of 96 MeV Neutrons with Silicon

    International Nuclear Information System (INIS)

    Tippawan, U.; Dangtip, S.; Pomp, S.; Atac, A.; Bergenwall, B.; Blomgren, J.; Hildebrand, A.; Johansson, C.; Klug, J.; Mermod, P.; Oesterlund, M.; Nilsson, L.; Elmgren, K.; Olsson, N.; Jonsson, O.; Prokofiev, A.V.; Renberg, P.-U.; Nadel-Turonski, P.; Corcalciuc, V.; Watanabe, Y.

    2005-01-01

    Radiation effects induced by terrestrial cosmic rays in microelectronics, on board aircrafts as well as at sea level, have recently attracted much attention. The most important particle radiation is due to spallation neutrons, created in the atmosphere by cosmic-ray protons. When, e.g., an electronic memory circuit is exposed to neutron radiation, charged particles can be produced in a nuclear reaction. The charge released by ionization can cause a flip of the memory content in a bit, which is called a single-event upset (SEU). This induces no hardware damage to the circuit, but unwanted re-programming of memories, CPUs, etc., can have consequences for the reliability, and ultimately also for the safety of the system.Data on energy and angular distributions of the secondary particles produced by neutrons in silicon nuclei are essential input for analyses and calculation of SEU rate. In this work, double-differential cross sections of inclusive light-ion (p, d, t, 3He and α) production in silicon, induced by 96 MeV neutrons, are presented. Energy distributions are measured at eight laboratory angles from 20 deg. to 160 deg. in steps of 20 deg. Deduced energy-differential and production cross sections are reported as well. Experimental cross sections are compared to theoretical reaction model calculations and existing experimental data in the literature

  2. Detection and light enhancement of glucose oxidase adsorbed on porous silicon microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Palestino, Gabriela [GES-UMR 5650, CNRS-Universite Montpellier II, Montpellier (France); Facultad de Ciencias Quimicas, Universidad Autonoma de San Luis Potosi, San Luis Potosi (Mexico); Martin, Marta; Legros, Rene; Cloitre, Thierry; Gergely, Csilla [GES-UMR 5650, CNRS-Universite Montpellier II, Montpellier (France); Agarwal, Vivechana [CIICAP, Universidad Autonoma del Estado de Morelos, Cuernavaca (Mexico); Zimanyi, Laszlo [EA4203, Faculte d' Odontologie, Universite Montpellier I, Montpellier (France); Institute of Biophysics, Biological Research Center, Hungarian Academy of Sciences, Szeged (Hungary)

    2009-07-15

    Porous silicon (PSi) structure is used as support material to detect protein infiltration and to induce fluorescence and second harmonic light enhancement from glucose oxidase (GOX). Functionalization and protein infiltration is monitored by specular reflectometry. Optical response enhancement of PSi microcavity structures compared to PSi single layers or Bragg mirrors is observed, when GOX is impregnated. Penetration of organic molecules along the PSi microcavity structure is demonstrated by energy dispersive X-ray profile. Enhanced fluorescence emission of GOX when adsorbed on PSi microcavity is evidenced by multi-photon microscopy (MPM). Second harmonic light generation is observed at some particular pores of PSi and subsequent resonance enhancement of the signal arising from the GOX adsorbed within the pores is detected. Our work evidences an improved device functionality of GOX-PSi microcavities due to strongly confined and localized light emission within these structures. This opens the way towards the application of PSi microcavity structures as amended biosensors based on their locally enhanced optical response. The second main achievement lies in the novelty of the used techniques. In contrast to the specular reflectometry used to monitor the macroscopic optical response of PSi structures, MPM presents a valuable alternative microscopic technique probing individual pores. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  4. Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

    International Nuclear Information System (INIS)

    Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin

    2015-01-01

    Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons

  5. Nano imprint lithography of textures for light trapping in thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Soppe, W.J.; Dorenkamper, M.S.; Notta, J.B.; Pex, P.P.A.C. [ECN-Solliance, High Tech Campus 5, 5656 AE Eindhoven (Netherlands); Schipper, W.; Wilde, R. [Nanoptics GmbH, Innungsstrasse 5, 21244 Buchholz (Germany)

    2012-09-15

    Nano Imprint Lithography (NIL) is a versatile and commercially viable technology for fabrication of structures for light trapping in solar cells. We demonstrate the applicability of NIL in thin film silicon solar cells in substrate configuration, where NIL is used to fabricate a textured rear contact of the solar cells. We applied random structures, based on the natural texture of SnO:F grown by APCVD, and designed 2D periodic structures and show that for single junction {mu}c-Si cells these textured rear contacts lead to an increase of Jsc of more than 40 % in comparison to cells with flat rear contacts. Cells on optimized periodic textures showed higher fill factors which can be attributed to reduced microcrack formation, leading to less shunting in comparison to cells on random textures.

  6. Silicon coupled-ring resonator structures for slow light applications: potential, impairments and ultimate limits

    International Nuclear Information System (INIS)

    Canciamilla, A; Torregiani, M; Ferrari, C; Morichetti, F; Melloni, A; De La Rue, R M; Samarelli, A; Sorel, M

    2010-01-01

    Coupled-ring resonator-based slow light structures are reported and discussed. By combining the advantages of high index contrast silicon-on-insulator technology with an efficient thermo-optical activation, they provide an on-chip solution with a bandwidth of up to 100 GHz and a slowdown factor of up to 16, as well as a continuous reconfiguration scheme and a fine tunability. The performance of these devices is investigated in detail for both static and dynamic operation, in order to evaluate their potential in optical signal processing applications at high bit rate. The main impairments imposed by fabrication imperfections are also discussed in relation to the slowdown factor. In particular, the analysis of the impact of backscatter, disorder and two-photon absorption on the device transfer function reveals the ultimate limits of these structures and provides valuable design rules for their optimization

  7. Theoretical and experimental investigations of efficient light coupling with spatially varied all dielectric striped waveguides

    Science.gov (United States)

    Yilmaz, Y. A.; Tandogan, S. E.; Hayran, Z.; Giden, I. H.; Turduev, M.; Kurt, H.

    2017-07-01

    Integrated photonic systems require efficient, compact, and broadband solutions for strong light coupling into and out of optical waveguides. The present work investigates an efficient optical power transferring the problem between optical waveguides having different widths of in/out terminals. We propose a considerably practical and feasible concept to implement and design an optical coupler by introducing gradually index modulation to the coupler section. The index profile of the coupler section is modulated with a Gaussian function by the help of striped waveguides. The effective medium theory is used to replace the original spatially varying index profile with dielectric stripes of a finite length/width having a constant effective refractive index. 2D and 3D finite-difference time-domain analyzes are utilized to investigate the sampling effect of the designed optical coupler and to determine the parameters that play a crucial role in enhancing the optical power transfer performance. Comparing the coupling performance of conventional benchmark adiabatic and butt couplers with the designed striped waveguide coupler, the corresponding coupling efficiency increases from approximately 30% to 95% over a wide frequency interval. In addition, to realize the realistic optical coupler appropriate to integrated photonic applications, the proposed structure is numerically designed on a silicon-on-insulator wafer. The implemented SOI platform based optical coupler operates in the telecom wavelength regime (λ = 1.55 μm), and the dimensions of the striped coupler are kept as 9.77 μm (along the transverse to propagation direction) and 7.69 μm (along the propagation direction) where the unit distance is fixed to be 465 nm. Finally, to demonstrate the operating design principle, the microwave experiments are conducted and the spot size conversion ratio as high as 7.1:1 is measured, whereas a coupling efficiency over 60% in the frequency range of 5.0-16.0 GHz has been also

  8. Special features of local spatial spectrum of Bessel light beams

    CSIR Research Space (South Africa)

    Belyi, VN

    2011-11-01

    Full Text Available In this paper the authors consider the angular spectrum of an apertured Bessel beam when the aperture is circular and shifted laterally with respect to the optical axis. Since the perturbation of the resulting angular spectrum is due to a spatially...

  9. Focusing of atoms with spatially localized light pulses

    International Nuclear Information System (INIS)

    Helseth, Lars Egil

    2002-01-01

    We theoretically study the focusing of atoms using strongly localized light pulses. It is shown that when inhomogenously polarized light is focused at high angular apertures, one may obtain useful potentials for atom focusing. Here we analyze the case of pulsed light potentials for red- and blue-detuned focusings of atoms. In particular, we show that the atomic beam aperture must be stopped considerably down in order to reduce the sidelobes of the atomic density, which is similar to the situation often encountered in conventional optics. It is suggested that an annular aperture in front of the atomic beam could be useful for increasing the resolution, at the cost of a lower atomic density

  10. Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

    Science.gov (United States)

    Peters, M; Battaglia, C; Forberich, K; Bläsi, B; Sahraei, N; Aberle, A G

    2012-12-31

    Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

  11. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    International Nuclear Information System (INIS)

    Kuang, Y.; Lare, M. C. van; Polman, A.; Veldhuizen, L. W.; Schropp, R. E. I.; Rath, J. K.

    2015-01-01

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials

  12. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Lare, M. C. van; Polman, A. [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Veldhuizen, L. W.; Schropp, R. E. I., E-mail: r.e.i.schropp@tue.nl [Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rath, J. K. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands)

    2015-11-14

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials.

  13. Continuous-wave spatial quantum correlations of light induced by multiple scattering

    DEFF Research Database (Denmark)

    Smolka, Stephan; Ott, Johan Raunkjær; Huck, Alexander

    2012-01-01

    and reflectance. Utilizing frequency-resolved quantum noise measurements, we observe that the strength of the spatial quantum correlation function can be controlled by changing the quantum state of an incident bright squeezed-light source. Our results are found to be in excellent agreement with the developed......We present theoretical and experimental results on spatial quantum correlations induced by multiple scattering of nonclassical light. A continuous-mode quantum theory is derived that enables determining the spatial quantum correlation function from the fluctuations of the total transmittance...... theory and form a basis for future research on, e. g., quantum interference of multiple quantum states in a multiple scattering medium....

  14. Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Idrobo, Juan C., E-mail: idrobojc@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Walkosz, Weronika [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Klie, Robert F.; Oeguet, Serdar [Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States)

    2012-12-15

    In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si{sub 3}N{sub 4}/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si{sub 3}N{sub 4}/SiO{sub 2} interface and in bulk Si{sub 3}N{sub 4} using aberration-corrected scanning transmission electron microscopy. -- Highlights: Black-Right-Pointing-Pointer Revealing the atomic structure of the {alpha}-Si{sub 3}N{sub 4}/SiO{sub 2} interface. Black-Right-Pointing-Pointer Identification and lattice location of oxygen impurities in bulk {alpha}-Si{sub 3}N{sub 4}. Black-Right-Pointing-Pointer Short range ordering of nitrogen and oxygen at the {beta}-Si{sub 3}N{sub 4}/SiO{sub 2} interface.

  15. Two-dimensionally grown single-crystal silicon nanosheets with tunable visible-light emissions.

    Science.gov (United States)

    Kim, Sung Wook; Lee, Jaejun; Sung, Ji Ho; Seo, Dong-jae; Kim, Ilsoo; Jo, Moon-Ho; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

    2014-07-22

    Since the discovery of graphene, growth of two-dimensional (2D) nanomaterials has greatly attracted attention. However, spontaneous growth of atomic two-dimensional (2D) materials is limitedly permitted for several layered-structure crystals, such as graphene, MoS2, and h-BN, and otherwise it is notoriously difficult. Here we report the gas-phase 2D growth of silicon (Si), that is cubic in symmetry, via dendritic growth and an interdendritic filling mechanism and to form Si nanosheets (SiNSs) of 1 to 13 nm in thickness. Thin SiNSs show strong thickness-dependent photoluminescence in visible range including red, green, and blue (RGB) emissions with the associated band gap energies ranging from 1.6 to 3.2 eV; these emission energies were greater than those from Si quantum dots (SiQDs) of the similar sizes. We also demonstrated that electrically driven white, as well as blue, emission in a conventional organic light-emitting diode (OLED) geometry with the SiNS assembly as the active emitting layers. Tunable light emissions in visible range in our observations suggest practical implications for novel 2D Si nanophotonics.

  16. High Incidence of Breast Cancer in Light-Polluted Areas with Spatial Effects in Korea.

    Science.gov (United States)

    Kim, Yun Jeong; Park, Man Sik; Lee, Eunil; Choi, Jae Wook

    2016-01-01

    We have reported a high prevalence of breast cancer in light-polluted areas in Korea. However, it is necessary to analyze the spatial effects of light polluted areas on breast cancer because light pollution levels are correlated with region proximity to central urbanized areas in studied cities. In this study, we applied a spatial regression method (an intrinsic conditional autoregressive [iCAR] model) to analyze the relationship between the incidence of breast cancer and artificial light at night (ALAN) levels in 25 regions including central city, urbanized, and rural areas. By Poisson regression analysis, there was a significant correlation between ALAN, alcohol consumption rates, and the incidence of breast cancer. We also found significant spatial effects between ALAN and the incidence of breast cancer, with an increase in the deviance information criterion (DIC) from 374.3 to 348.6 and an increase in R2 from 0.574 to 0.667. Therefore, spatial analysis (an iCAR model) is more appropriate for assessing ALAN effects on breast cancer. To our knowledge, this study is the first to show spatial effects of light pollution on breast cancer, despite the limitations of an ecological study. We suggest that a decrease in ALAN could reduce breast cancer more than expected because of spatial effects.

  17. Photonic Structures for Light Trapping in Thin Film Silicon Solar Cells: Design and Experiment

    Directory of Open Access Journals (Sweden)

    Yi Ding

    2017-12-01

    Full Text Available One of the foremost challenges in designing thin-film silicon solar cells (TFSC is devising efficient light-trapping schemes due to the short optical path length imposed by the thin absorber thickness. The strategy relies on a combination of a high-performance back reflector and an optimized texture surface, which are commonly used to reflect and scatter light effectively within the absorption layer, respectively. In this paper, highly promising light-trapping structures based on a photonic crystal (PC for TFSCs were investigated via simulation and experiment. Firstly, a highly-reflective one-dimensional photonic crystal (1D-PC was designed and fabricated. Then, two types of 1D-PC-based back reflectors (BRs were proposed: Flat 1D-PC with random-textured aluminum-doped zinc oxide (AZO or random-textured 1D-PC with AZO. These two newly-designed BRs demonstrated not only high reflectivity and sufficient conductivity, but also a strong light scattering property, which made them efficient candidates as the electrical contact and back reflector since the intrinsic losses due to the surface plasmon modes of the rough metal BRs can be avoided. Secondly, conical two-dimensional photonic crystal (2D-PC-based BRs were investigated and optimized for amorphous a-SiGe:H solar cells. The maximal absorption value can be obtained with an aspect ratio of 1/2 and a period of 0.75 µm. To improve the full-spectral optical properties of solar cells, a periodically-modulated PC back reflector was proposed and experimentally demonstrated in the a-SiGe:H solar cell. This periodically-modulated PC back reflector, also called the quasi-crystal structure (QCS, consists of a large periodic conical PC and a randomly-textured Ag layer with a feature size of 500–1000 nm. The large periodic conical PC enables conformal growth of the layer, while the small feature size of Ag can further enhance the light scattering. In summary, a comprehensive study of the design, simulation

  18. Mapping lightscapes: spatial patterning of artificial lighting in an urban landscape.

    Science.gov (United States)

    Hale, James D; Davies, Gemma; Fairbrass, Alison J; Matthews, Thomas J; Rogers, Christopher D F; Sadler, Jon P

    2013-01-01

    Artificial lighting is strongly associated with urbanisation and is increasing in its extent, brightness and spectral range. Changes in urban lighting have both positive and negative effects on city performance, yet little is known about how its character and magnitude vary across the urban landscape. A major barrier to related research, planning and governance has been the lack of lighting data at the city extent, particularly at a fine spatial resolution. Our aims were therefore to capture such data using aerial night photography and to undertake a case study of urban lighting. We present the finest scale multi-spectral lighting dataset available for an entire city and explore how lighting metrics vary with built density and land-use. We found positive relationships between artificial lighting indicators and built density at coarse spatial scales, whilst at a local level lighting varied with land-use. Manufacturing and housing are the primary land-use zones responsible for the city's brightly lit areas, yet manufacturing sites are relatively rare within the city. Our data suggests that efforts to address light pollution should broaden their focus from residential street lighting to include security lighting within manufacturing areas.

  19. Spatial heterogeneity in light supply affects intraspecific competition of a stoloniferous clonal plant.

    Directory of Open Access Journals (Sweden)

    Pu Wang

    Full Text Available Spatial heterogeneity in light supply is common in nature. Many studies have examined the effects of heterogeneous light supply on growth, morphology, physiology and biomass allocation of clonal plants, but few have tested those effects on intraspecific competition. In a greenhouse experiment, we grew one (no competition or nine ramets (with intraspecific competition of a stoloniferous clonal plant, Duchesnea indica, in three homogeneous light conditions (high, medium and low light intensity and two heterogeneous ones differing in patch size (large and small patch treatments. The total light in the two heterogeneous treatments was the same as that in the homogeneous medium light treatment. Both decreasing light intensity and intraspecific competition significantly decreased the growth (biomass, number of ramets and total stolon length of D. indica. As compared with the homogeneous medium light treatment, the large patch treatment significantly increased the growth of D. indica without intraspecific competition. However, the growth of D. indica with competition did not differ among the homogeneous medium light, the large and the small patch treatments. Consequently, light heterogeneity significantly increased intraspecific competition intensity, as measured by the decreased log response ratio. These results suggest that spatial heterogeneity in light supply can alter intraspecific interactions of clonal plants.

  20. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

  1. Monochromator for synchrotron light with temperature controlled by electrical current on silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Cusatis, Cesar; Souza, Paulo E.N. [Universidade Federal do Parana (LORXI/UFPR), Curitiba, PR (Brazil). Dept. de Fisica. Lab. de Optica de Raios X e Instrumentacao; Franco, Margareth Kobayaski; Kakuno, Edson [Laboratorio Nacional de Luz Sincroton (LNLS), Campinas, SP (Brazil); Gobbi, Angelo; Carvalho Junior, Wilson de [Centro de Pesquisa e Desenvolvimento em Telecomunicacoes (CPqD), Campinas, SP (Brazil)

    2011-07-01

    Full text. doped silicon crystal was used simultaneously as a monochromator, sensor and actuator in such way that its temperature could be controlled. Ohmic contacts allowed resistance measurements on a perfect silicon crystal, which were correlated to its temperature. Using the ohmic contacts, an electrical current caused Joule heating on the monochromator that was used to control its temperature. A simple stand-alone electronic box controlled the system. The device was built and tested with white beam synchrotron light on the double crystal monochromator of the XRD line of LNLS, Laboratorio Nacional de Luz Sincrotron, Campinas. The first crystal of a double crystal monochromator determines the energy that is delivered to a synchrotron experimental station and its temperature instability is a major source of energy and intensity instability. If the (333) silicon monochromator is at theta Bragg near 45 degree the variation of the diffraction angle is around one second of arc per degree Kelvin. It may take several minutes for the first crystal temperature to stabilize at the beginning of the station operation when the crystal and its environment are cold. With water refrigeration, the average overall temperature of the crystal may be constant, but the temperature of the surface changes with and without the white beam. The time used to wait for stabilization of the beam energy/intensity is lost unless the temperature of the crystal surface is kept constant. One solution for keeping the temperature of the monochromator and its environment constant or nearly constant is Joule heating it with a controlled small electrical current flowing on the surface of a doped perfect crystal. When the white beam is on, this small amount of extra power will be more concentrated at the beam footpath because the resistance is lower in this region due to the higher temperature. In addition, if the crystal itself is used to detect the temperature variation by measuring the electrical

  2. Efficient Sub-Bandgap Light Absorption and Signal Amplification in Silicon Photodetectors

    Science.gov (United States)

    Liu, Yu-Hsin

    This thesis focuses on two areas in silicon photodetectors, the first being enhancing the sub-bandgap light absorption of IR wavelenghts in silicon, and the second being intrinsic signal amplification in silicon photodetectors. Both of these are achieved using heavily doped p-n junction devices which create localized states that relax the k-selection rule of indirect bandgap material. The probability of transitions between impurity band and the conduction/valence band would be much more efficient than the one between band-to-band transition. The waveguide-coupled epitaxial p-n photodetector was demonstrated for 1310 nm wavelength detection. Incorporated with the Franz-Keldysh effect and the quasi-confined epitaxial layer design, an absorption coefficient around 10 cm-1 has been measured and internal quantum efficiency nearly 100% at -2.5V. The absorption coefficient is calculated from the wave function of the electron and hole in p-n diode. The heavily doped impurity wave function can be formulated as a delta function, and the quasi-confined conduction band energy states, and the wave function on each level can be obtained from the Silvaco software. The calculated theoretical absorption coefficient increases with the increasing applied bias and the doping concentration, which matches the experimental results. To solve the issues of large excess noise and high operation bias for avalanche photodiodes based on impact ionization, I presented a detector using the Cycling Excitation Process (CEP) for signal amplification. This can be realized in a heavily doped and highly compensated Si p-n junction, showing ultra high gain about 3000 at very low bias (<4 V), and possessing an intrinsic, phonon-mediated regulation process to keep the device stable without any quenching device required in today's Geiger-mode avalanche detectors. The CEP can be formulated with the rate equations in conduction bands and impurity states. The gain expression, which is a function of the

  3. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  4. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  5. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Directory of Open Access Journals (Sweden)

    Yulong Zhang

    2018-05-01

    Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  6. Enhanced light emission in photonic crystal nanocavities with Erbium-doped silicon nanocrystals

    International Nuclear Information System (INIS)

    Makarova, Maria; Sih, Vanessa; Vuckovic, Jelena; Warga, Joe; Li Rui; Dal Negro, Luca

    2008-01-01

    Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence

  7. High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

    Science.gov (United States)

    Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

    2018-05-01

    High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

  8. Generation of sinusoidal fringes with a holographic phase grating and a phase-only spatial light modulator

    International Nuclear Information System (INIS)

    Berberova, Natalia; Stoykova, Elena; Sainov, Ventseslav

    2012-01-01

    A variety of pattern projection methods for the three-dimensional capture of objects is based on the generation of purely sinusoidal fringes. This is not an easy task, especially when a portable non-interferometric system for outdoor usage is required. The use of phase gratings with coherent illumination as a possible solution has the advantage of providing good stability and a large measurement volume. In this work, we analyze the quality of fringes projected with two sinusoidal phase gratings. The first grating is recorded on a silver-halide holographic plate by means of a Michelson interferometer. The spatial resolution of the silver-halide material used is greater than 6000 lines per millimeter, and the recorded grating is practically analogous to a smooth variation of the phase profile. The second grating is formed as a sinusoidal phase variation on a liquid crystal-on-silicon phase-only reflective display with a resolution of 1920×1080 pixels, a pixel pitch of 8 μm and 256 phase levels. The frequency content of the fringes projected with both gratings is analyzed and compared on the basis of the calculated Fresnel diffraction pattern, taking into account that the sinusoidal phase distribution in the case of a spatial light modulator is both sampled and quantized. Experimental fringe patterns projected using both gratings are also provided.

  9. Three-dimension reconstruction based on spatial light modulator

    International Nuclear Information System (INIS)

    Deng Xuejiao; Zhang Nanyang; Zeng Yanan; Yin Shiliang; Wang Weiyu

    2011-01-01

    Three-dimension reconstruction, known as an important research direction of computer graphics, is widely used in the related field such as industrial design and manufacture, construction, aerospace, biology and so on. Via such technology we can obtain three-dimension digital point cloud from a two-dimension image, and then simulate the three-dimensional structure of the physical object for further study. At present, the obtaining of three-dimension digital point cloud data is mainly based on the adaptive optics system with Shack-Hartmann sensor and phase-shifting digital holography. Referring to surface fitting, there are also many available methods such as iterated discrete fourier transform, convolution and image interpolation, linear phase retrieval. The main problems we came across in three-dimension reconstruction are the extraction of feature points and arithmetic of curve fitting. To solve such problems, we can, first of all, calculate the relevant surface normal vector information of each pixel in the light source coordinate system, then these vectors are to be converted to the coordinates of image through the coordinate conversion, so the expectant 3D point cloud get arise. Secondly, after the following procedures of de-noising, repairing, the feature points can later be selected and fitted to get the fitting function of the surface topography by means of Zernike polynomial, so as to reconstruct the determinand's three-dimensional topography. In this paper, a new kind of three-dimension reconstruction algorithm is proposed, with the assistance of which, the topography can be estimated from its grayscale at different sample points. Moreover, the previous stimulation and the experimental results prove that the new algorithm has a strong capability to fit, especially for large-scale objects .

  10. Three-dimension reconstruction based on spatial light modulator

    Energy Technology Data Exchange (ETDEWEB)

    Deng Xuejiao; Zhang Nanyang; Zeng Yanan; Yin Shiliang; Wang Weiyu, E-mail: daisydelring@yahoo.com.cn [Huazhong University of Science and Technology (China)

    2011-02-01

    Three-dimension reconstruction, known as an important research direction of computer graphics, is widely used in the related field such as industrial design and manufacture, construction, aerospace, biology and so on. Via such technology we can obtain three-dimension digital point cloud from a two-dimension image, and then simulate the three-dimensional structure of the physical object for further study. At present, the obtaining of three-dimension digital point cloud data is mainly based on the adaptive optics system with Shack-Hartmann sensor and phase-shifting digital holography. Referring to surface fitting, there are also many available methods such as iterated discrete fourier transform, convolution and image interpolation, linear phase retrieval. The main problems we came across in three-dimension reconstruction are the extraction of feature points and arithmetic of curve fitting. To solve such problems, we can, first of all, calculate the relevant surface normal vector information of each pixel in the light source coordinate system, then these vectors are to be converted to the coordinates of image through the coordinate conversion, so the expectant 3D point cloud get arise. Secondly, after the following procedures of de-noising, repairing, the feature points can later be selected and fitted to get the fitting function of the surface topography by means of Zernike polynomial, so as to reconstruct the determinand's three-dimensional topography. In this paper, a new kind of three-dimension reconstruction algorithm is proposed, with the assistance of which, the topography can be estimated from its grayscale at different sample points. Moreover, the previous stimulation and the experimental results prove that the new algorithm has a strong capability to fit, especially for large-scale objects .

  11. Three-dimension reconstruction based on spatial light modulator

    Science.gov (United States)

    Deng, Xuejiao; Zhang, Nanyang; Zeng, Yanan; Yin, Shiliang; Wang, Weiyu

    2011-02-01

    Three-dimension reconstruction, known as an important research direction of computer graphics, is widely used in the related field such as industrial design and manufacture, construction, aerospace, biology and so on. Via such technology we can obtain three-dimension digital point cloud from a two-dimension image, and then simulate the three-dimensional structure of the physical object for further study. At present, the obtaining of three-dimension digital point cloud data is mainly based on the adaptive optics system with Shack-Hartmann sensor and phase-shifting digital holography. Referring to surface fitting, there are also many available methods such as iterated discrete fourier transform, convolution and image interpolation, linear phase retrieval. The main problems we came across in three-dimension reconstruction are the extraction of feature points and arithmetic of curve fitting. To solve such problems, we can, first of all, calculate the relevant surface normal vector information of each pixel in the light source coordinate system, then these vectors are to be converted to the coordinates of image through the coordinate conversion, so the expectant 3D point cloud get arise. Secondly, after the following procedures of de-noising, repairing, the feature points can later be selected and fitted to get the fitting function of the surface topography by means of Zernike polynomial, so as to reconstruct the determinand's three-dimensional topography. In this paper, a new kind of three-dimension reconstruction algorithm is proposed, with the assistance of which, the topography can be estimated from its grayscale at different sample points. Moreover, the previous stimulation and the experimental results prove that the new algorithm has a strong capability to fit, especially for large-scale objects .

  12. Origins of visible-light emissions in hydrogen-coated silicon nanocrystals: Role of passivating coating

    International Nuclear Information System (INIS)

    Tit, Nacir; Yamani, Z.H.; Graham, J.; Ayesh, A.

    2010-01-01

    We present a theoretical investigation of the electronic and optical properties of hydrogen-coated silicon nanocrystals (Si:H NCs). On one hand, the density-functional theory (DFT) is used to both calculate the total energy and relax the NCs. On a second hand, the tight-binding method, which includes the minimal sp 3 -basis set within the second-nearest-neighbor interaction scheme, is applied to calculate the electronic structures, oscillator strength (OS) and recombination rate (RR) versus the NC size, coating and atomic relaxation. Three main findings are reported: (i) The quantum confinement in these NCs do follow similar rule to the case of a single-particle in a box, where the confinement energy decays in power-law with the increasing NC's size. (ii) The coating is shown to play the essential role in creation of large band-gap energy lying within the visible-light energy spectrum. (iii) The surface atomic relaxation is found to reduce the band-gap energy by about 150 meV and enhance both OS and RR. Our claims are corroborated by the available experimental data.

  13. A high-power spatial filter for Thomson scattering stray light reduction

    Science.gov (United States)

    Levesque, J. P.; Litzner, K. D.; Mauel, M. E.; Maurer, D. A.; Navratil, G. A.; Pedersen, T. S.

    2011-03-01

    The Thomson scattering diagnostic on the High Beta Tokamak-Extended Pulse (HBT-EP) is routinely used to measure electron temperature and density during plasma discharges. Avalanche photodiodes in a five-channel interference filter polychromator measure scattered light from a 6 ns, 800 mJ, 1064 nm Nd:YAG laser pulse. A low cost, high-power spatial filter was designed, tested, and added to the laser beamline in order to reduce stray laser light to levels which are acceptable for accurate Rayleigh calibration. A detailed analysis of the spatial filter design and performance is given. The spatial filter can be easily implemented in an existing Thomson scattering system without the need to disturb the vacuum chamber or significantly change the beamline. Although apertures in the spatial filter suffer substantial damage from the focused beam, with proper design they can last long enough to permit absolute calibration.

  14. Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

    Science.gov (United States)

    Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

    2010-03-29

    Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

  15. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

  16. Spatial equity analysis on expressway network development in Japan: Empirical approach using the spatial computable general equilibrium model RAEM-light

    NARCIS (Netherlands)

    Koike, A.; Tavasszy, L.; Sato, K.

    2009-01-01

    The authors apply the RAEM-Light model to analyze the distribution of social benefits from expressway network projects from the viewpoint of spatial equity. The RAEM-Light model has some innovative features. The spatial behavior of producers and consumers is explicitly described and is endogenously

  17. Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

    KAUST Repository

    Li, Ting

    2016-07-21

    Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits excellent photocatalytic ability and stability after 10 cycles in degrading methyl orange under visible light irradiation, owing to its unique mesoporous network, abundant surface hydrides and efficient light harvesting. This work showcases the profound effects of surface area, crystallinity, pore topology on charge migration/recombination and mass transportation. Therein the ordered 1D channel array has outperformed the interconnected 3D porous network by greatly accelerating the mass diffusion and enhancing the accessibility of the active sites on the extensive surfaces. © 2016 The Royal Society of Chemistry.

  18. Spatial layout optimization design of multi-type LEDs lighting source based on photoelectrothermal coupling theory

    Science.gov (United States)

    Xue, Lingyun; Li, Guang; Chen, Qingguang; Rao, Huanle; Xu, Ping

    2018-03-01

    Multiple LED-based spectral synthesis technology has been widely used in the fields of solar simulator, color mixing, and artificial lighting of plant factory and so on. Generally, amounts of LEDs are spatially arranged with compact layout to obtain the high power density output. Mutual thermal spreading among LEDs will produce the coupled thermal effect which will additionally increase the junction temperature of LED. Affected by the Photoelectric thermal coupling effect of LED, the spectrum of LED will shift and luminous efficiency will decrease. Correspondingly, the spectral synthesis result will mismatch. Therefore, thermal management of LED spatial layout plays an important role for multi-LEDs light source system. In the paper, the thermal dissipation network topology model considering the mutual thermal spreading effect among the LEDs is proposed for multi-LEDs system with various types of power. The junction temperature increment cased by the thermal coupling has the great relation with the spatial arrangement. To minimize the thermal coupling effect, an optimized method of LED spatial layout for the specific light source structure is presented and analyzed. The results showed that layout of LED with high-power are arranged in the corner and low-power in the center. Finally, according to this method, it is convenient to determine the spatial layout of LEDs in a system having any kind of light source structure, and has the advantages of being universally applicable to facilitate adjustment.

  19. Optimization of spatial light distribution through genetic algorithms for vision systems applied to quality control

    International Nuclear Information System (INIS)

    Castellini, P; Cecchini, S; Stroppa, L; Paone, N

    2015-01-01

    The paper presents an adaptive illumination system for image quality enhancement in vision-based quality control systems. In particular, a spatial modulation of illumination intensity is proposed in order to improve image quality, thus compensating for different target scattering properties, local reflections and fluctuations of ambient light. The desired spatial modulation of illumination is obtained by a digital light projector, used to illuminate the scene with an arbitrary spatial distribution of light intensity, designed to improve feature extraction in the region of interest. The spatial distribution of illumination is optimized by running a genetic algorithm. An image quality estimator is used to close the feedback loop and to stop iterations once the desired image quality is reached. The technique proves particularly valuable for optimizing the spatial illumination distribution in the region of interest, with the remarkable capability of the genetic algorithm to adapt the light distribution to very different target reflectivity and ambient conditions. The final objective of the proposed technique is the improvement of the matching score in the recognition of parts through matching algorithms, hence of the diagnosis of machine vision-based quality inspections. The procedure has been validated both by a numerical model and by an experimental test, referring to a significant problem of quality control for the washing machine manufacturing industry: the recognition of a metallic clamp. Its applicability to other domains is also presented, specifically for the visual inspection of shoes with retro-reflective tape and T-shirts with paillettes. (paper)

  20. Observation of spatial quantum correlations induced by multiple scattering of nonclassical light

    DEFF Research Database (Denmark)

    Smolka, Stephan; Huck, Alexander; Andersen, Ulrik Lund

    2009-01-01

    and negative spatial quantum correlations are observed when varying the quantum state incident to the multiple scattering medium, and the strength of the correlations is controlled by the number of photons. The experimental results are in excellent agreement with recent theoretical proposals by implementing......We present the experimental realization of spatial quantum correlations of photons that are induced by multiple scattering of squeezed light. The quantum correlation relates photons propagating along two different light paths through the random medium and is infinite in range. Both positive...... the full quantum model of multiple scattering....

  1. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

    2016-03-05

    Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  2. Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Falcone, A., E-mail: andrea.falcone@pv.infn.it [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bertoni, R. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Boffelli, F. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bonesini, M. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Cervi, T. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Menegolli, A. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Montanari, C.; Prata, M.C.; Rappoldi, A.; Raselli, G.L.; Rossella, M.; Simonetta, M. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Spanu, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Torti, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Zani, A. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy)

    2015-07-01

    We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied. - Highlights: • We tested 2 SiPMs both at room and at cryogenic temperature. • Breakdown voltage, quenching resistance, gain and dark rate were measured. • Efficiency for VUV light detection was measured.

  3. THE EFFECT OF MAGNETIC FIELD ON THE EFFICIENCY OF A SILICON SOLAR CELL UNDER AN INTENSE LIGHT CONCENTRATION

    Directory of Open Access Journals (Sweden)

    Zoungrana Martial

    2017-06-01

    Full Text Available This work put in evidence, magnetic field effect the electrical parameters of a silicon solar cell illuminated by an intense light concentration: external load electric power, conversion efficiency, fill factor, external optimal charge load. Due to the high photogeneration of carrier in intense light illumination mode, in addition of magnetic field, we took into account the carrier gradient electric field in the base of the solar cell. Taking into account this electric field and the applied magnetic field in our model led to new analytical expressions of the continuity equation, the photocurrent and the photovoltage.

  4. Nanoimprint lithography of light trapping patterns in sol-gel coatings for thin film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Heijna, M.; Loffler, J.; Van Aken, B.B.; Soppe, W.J. [ECN Solar Energy, Petten (Netherlands); Borg, H.; Peeters, P. [OM and T, Eindhoven (Netherlands)

    2008-04-15

    For thin-film silicon solar cells, light trapping schemes are of uppermost importance to harvest all available sunlight. Typically, randomly textured TCO front layers are used to scatter the light diffusively in p-i-n cells on glass. Here, we investigate methods to texture the back contact with both random and periodic textures, for use in n-i-p cells on opaque foil. We applied an electrically insulating SiOx-polymer coating on a stainless steel substrate, and textured this barrier layer by nanoimprint. On this barrier layer the back contact is deposited for further use in the solar cell stack. Replication of masters with various random and periodic patterns was tested, and, using scanning electron microscopy, replicas were found to compare well with the originals. Masters with U-grooves of various sub micrometer widths have been used to investigate the optimal dimensions of regular patterns for light trapping in the silicon layers. Angular reflection distributions were measured to evaluate the light scattering properties of both periodic and random patterns. Diffraction gratings show promising results in scattering the light to specific angles, enhancing the total internal reflection in the solar cell.

  5. A> L1-TV algorithm for robust perspective photometric stereo with spatially-varying lightings

    DEFF Research Database (Denmark)

    Quéau, Yvain; Lauze, Francois Bernard; Durou, Jean-Denis

    2015-01-01

    We tackle the problem of perspective 3D-reconstruction of Lambertian surfaces through photometric stereo, in the presence of outliers to Lambert's law, depth discontinuities, and unknown spatially-varying lightings. To this purpose, we introduce a robust $L^1$-TV variational formulation of the re...

  6. Formation of temperature fields in doped anisotropic crystals under spatially inhomogeneous light beams passing through them

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. V.; Markelov, A. S.; Trushin, V. N., E-mail: trushin@phys.unn.ru; Chuprunov, E. V. [Nizhni Novgorod State University (Russian Federation)

    2013-12-15

    The features of formation of thermal fields in potassium dihydrophosphate crystal doped with potassium permanganate under a 532-nm laser beam passing through it have been investigated. Data on the influence of birefringence on the temperature distribution in an anisotropic crystal whose surface is illuminated by a spatially modulated light beam are presented.

  7. Improved size distribution control of silicon nanocrystals in a spatially confined remote plasma

    NARCIS (Netherlands)

    Dogan, I.; Westerman, R. H. J.; M. C. M. van de Sanden,

    2015-01-01

    This work demonstrates how to improve the size distribution of silicon nanocrystals (Si-NCs) synthesized in a remote plasma, in which the flow dynamics and the particular chemistry initially resulted in the formation of small (2-10 nm) and large (50-120 nm) Si-NCs. Plasma consists of two regions: an

  8. Development of ocular hypertension secondary to tamponade with light versus heavy silicone oil: A systematic review

    Directory of Open Access Journals (Sweden)

    Vito Romano

    2015-01-01

    Full Text Available Aim: The intraocular silicone oil (SO tamponades used in the treatment of retinal detachment (RD have been associated with a difference ocular hypertension (OH rate. To clarify, if this complication was associated to use of standard SO (SSO versus heavy SO (HSO, we performed a systematic review and meta-analysis of comparative study between two kind of SO (standard or light vs. heavy for the treatment of RD and macular hole, without restriction to study design. Materials and Methods: The methodological quality of two randomized clinical trials (RCTs were evaluated using the criteria given in the Cochrane Handbook for Systematic Reviews of Intervention, while three non-RCTs were assessed with the Newcastle-Ottawa Scale and Strengthening the Reporting of Observational Studies in Epidemiology checklists. We calculated Mantel-Haenszel risk ratio (RR with 95% confidence intervals (95% CIs. The primary outcome was the rate of patients with OH treated with SSO compared to HSO. Results: There were a higher number of rates of OH in HSO compared to SSO. This difference was statistically significant with the fixed effect model (Mantel-Haenszel RR; 1.55; 95% CI, 1.06-2.28; P = 0.02 while there was not significative difference with the random effect model (Mantel-Haenszel RR; 1.51; 95% CI, 0.98-2.33; P = 0.06. Conclusion: We noted a trend that points out a higher OH rate in HSO group compared to SSO, but this finding, due to the small size and variable design of studies, needs to be confirmed in well-designed and large size RCTs.

  9. Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

    Science.gov (United States)

    Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

    2018-02-14

    Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

  10. Measuring spatially- and directionally-varying light scattering from biological material.

    Science.gov (United States)

    Harvey, Todd Alan; Bostwick, Kimberly S; Marschner, Steve

    2013-05-20

    Light interacts with an organism's integument on a variety of spatial scales. For example in an iridescent bird: nano-scale structures produce color; the milli-scale structure of barbs and barbules largely determines the directional pattern of reflected light; and through the macro-scale spatial structure of overlapping, curved feathers, these directional effects create the visual texture. Milli-scale and macro-scale effects determine where on the organism's body, and from what viewpoints and under what illumination, the iridescent colors are seen. Thus, the highly directional flash of brilliant color from the iridescent throat of a hummingbird is inadequately explained by its nano-scale structure alone and questions remain. From a given observation point, which milli-scale elements of the feather are oriented to reflect strongly? Do some species produce broader "windows" for observation of iridescence than others? These and similar questions may be asked about any organisms that have evolved a particular surface appearance for signaling, camouflage, or other reasons. In order to study the directional patterns of light scattering from feathers, and their relationship to the bird's milli-scale morphology, we developed a protocol for measuring light scattered from biological materials using many high-resolution photographs taken with varying illumination and viewing directions. Since we measure scattered light as a function of direction, we can observe the characteristic features in the directional distribution of light scattered from that particular feather, and because barbs and barbules are resolved in our images, we can clearly attribute the directional features to these different milli-scale structures. Keeping the specimen intact preserves the gross-scale scattering behavior seen in nature. The method described here presents a generalized protocol for analyzing spatially- and directionally-varying light scattering from complex biological materials at multiple

  11. Raman mapping of microcrystalline silicon thin films with high spatial resolution

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Vetushka, Aliaksi; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2010-01-01

    Roč. 7, 3-4 (2010), s. 704-707 ISSN 1862-6351 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : Raman * atomic force microscopy * microcrystalline silicon Subject RIV: BM - Solid Matter Physics ; Magnetism http://www3.interscience.wiley.com/journal/123277609/abstract

  12. Research on photodiode detector-based spatial transient light detection and processing system

    Science.gov (United States)

    Liu, Meiying; Wang, Hu; Liu, Yang; Zhao, Hui; Nan, Meng

    2016-10-01

    In order to realize real-time signal identification and processing of spatial transient light, the features and the energy of the captured target light signal are first described and quantitatively calculated. Considering that the transient light signal has random occurrence, a short duration and an evident beginning and ending, a photodiode detector based spatial transient light detection and processing system is proposed and designed in this paper. This system has a large field of view and is used to realize non-imaging energy detection of random, transient and weak point target under complex background of spatial environment. Weak signal extraction under strong background is difficult. In this paper, considering that the background signal changes slowly and the target signal changes quickly, filter is adopted for signal's background subtraction. A variable speed sampling is realized by the way of sampling data points with a gradually increased interval. The two dilemmas that real-time processing of large amount of data and power consumption required by the large amount of data needed to be stored are solved. The test results with self-made simulative signal demonstrate the effectiveness of the design scheme. The practical system could be operated reliably. The detection and processing of the target signal under the strong sunlight background was realized. The results indicate that the system can realize real-time detection of target signal's characteristic waveform and monitor the system working parameters. The prototype design could be used in a variety of engineering applications.

  13. Spatial distribution of fluorescent light emitted from neon and nitrogen excited by low energy electron beams

    International Nuclear Information System (INIS)

    Morozov, A.; Kruecken, R.; Ulrich, A.; Wieser, J.

    2006-01-01

    Side-view intensity profiles of fluorescent light were measured for neon and nitrogen excited with 12 keV electron beams at gas pressures from 250 to 1400 hPa. The intensity profiles were compared with theoretical profiles calculated using the CASINO program which performs Monte Carlo simulations of electron scattering. It was assumed that the spatial distribution of fluorescent intensity is directly proportional to the spatial distribution of energy loss by primary electrons. The comparison shows good correlation of experimental data and the results of numeric simulations

  14. Trinary Encoder, Decoder, Multiplexer and Demultiplexer Using Savart Plate and Spatial Light Modulator

    Science.gov (United States)

    Ghosh, Amal K.; Singha Roy, Souradip; Mandal, Sudipta; Basuray, Amitabha

    Optoelectronic processors have already been developed with the strong potentiality of optics in information and data processing. Encoder, Decoder, Multiplexers and Demultiplexers are the most important components in modern system designs and in communications. We have implemented the same using trinary logic gates with signed magnitude defined as Modified Trinary Number (MTN). The Spatial Light Modulator (SLM) based optoelectronic circuit is suitable for high speed data processing and communications using photon as carrier. We also presented here a possible method of implementing the same using light with photon as carrier of information. The importance of the method is that all the basic gates needed may be fabricated based on basic building block.

  15. Spectral and spatial characteristics of third-harmonic generation in conical light beams

    International Nuclear Information System (INIS)

    Peet, V.E.; Shchemeljov, S.V.

    2003-01-01

    Generation of resonance-enhanced third harmonic in Bessel and other conical beams is analyzed from a simple picture, where the fundamental light field is decomposed into elementary configurations of crossed plain-wave sub-beams. We show that the overall harmonic output can be derived as a superposition of all partial harmonic components driven by elementary configurations of the fundamental field. Good agreement with experimental observations has been obtained in simulation of spectral and spatial characteristics of the generated third harmonic. Some peculiarities of harmonic generation in conical light fields are discussed

  16. Modeling and simulation of a 3D-CMOS silicon photodetector for low-intensity light detection

    Science.gov (United States)

    Sabri Alirezaei, Iman; Burte, Edmund P.

    2016-03-01

    This paper presents a design and simulation of a novel high performance 3D-silicon photodetector for implementing in the low intensity light detection at room temperature (300K). The photodetector is modeled by inspiration of general MEMS fabrication to make a 3D- structure in the silicon substrate using a bulk micromachining process, and based on a complementary metal-oxide semiconductor (CMOS) technology. The design includes a vertical n+/p junction as an optical window for lateral illumination. The simulation is carried out using COMSOL Multiphysics relying on theoretical and physical concepts, and then, the assessment of the results is done by the numerical analysis with SILVACO (Atlas) device simulator. Light is regarded as a monochromatic beam with a wavelength of 633nm that is placed 1μm far from the optical window. The simulation is considered under the reverse bias dc voltage in the steadystate. We present photocurrent-voltage (Iph-V) characteristics under different light intensities (2… 10[mW/cm2]), and dark current-voltage (Id-V) characteristics. Comparative studies of sensitivity dependence on the dopant concentration in the substrate as an intrinsic region are accomplished utilizing two different p-type silicon substrates with 1×1015 [1/cm3] and 4×1012 [1/cm3] doping concentration. Moreover, the sensitivity is evaluated with respect to the active substrate thickness. The simulated results confirmed that the high optical sensitivity of the photodetector with low dark current can be realized in this model.

  17. One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

    International Nuclear Information System (INIS)

    Bai, Fan; Li, Meicheng; Song, Dandan; Yu, Hang; Jiang, Bing; Li, Yingfeng

    2012-01-01

    One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO 3 /H 2 O 2 solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H 2 O 2 , which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 μm, 20 nm, 10 nm, and 1 μm, respectively. Highlights: ► Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. ► Etching process and mechanism are illustrated with etching model from a novel standpoint. ► As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

  18. Topography and refractometry of nanostructures using spatial light interference microscopy (SLIM)

    Science.gov (United States)

    Wang, Zhuo; Chun, Ik Su; Li, Xiuling; Ong, Zhun-Yong; Pop, Eric; Millet, Larry; Gillette, Martha; Popescu, Gabriel

    2010-01-01

    Spatial Light Interference Microscopy (SLIM) is a novel method developed in our laboratory that provides quantitative phase images of transparent structures with 0.3 nm spatial and 0.03 nm temporal accuracy owing to the white light illumination and its common path interferometric geometry. We exploit these features and demonstrate SLIM's ability to perform topography at a single atomic layer in graphene. Further, using a decoupling procedure that we developed for cylindrical structures, we extract the axially-averaged refractive index of semiconductor nanotubes and a neurite of a live hippocampal neuron in culture. We believe that this study will set the basis for novel high-throughput topography and refractometry of man-made and biological nanostructures. PMID:20081970

  19. Ray trace visualization of negative refraction of light in two-dimensional air-bridged silicon photonic crystal slabs at 1.55 microm.

    Science.gov (United States)

    Gan, Lin; Liu, Ya-Zhao; Li, Jiang-Yan; Zhang, Ze-Bo; Zhang, Dao-Zhong; Li, Zhi-Yuan

    2009-06-08

    We demonstrate design, fabrication, and ray trace observation of negative refraction of near-infrared light in a two-dimensional square lattice of air holes etched into an air-bridged silicon slab. Special surface morphologies are designed to reduce the impedance mismatch when light refracts from a homogeneous silicon slab into the photonic crystal slab. We clearly observed negative refraction of infrared light for TE-like modes in a broad wavelength range by using scanning near-field optical microscopy technology. The experimental results are in good agreement with finite-difference time-domain simulations. The results indicate the designed photonic crystal structure can serve as polarization beam splitter.

  20. FISH & CHIPS: Single Chip Silicon MEMS CTDL Salinity, Temperature, Pressure and Light sensor for use in fisheries research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Hansen, Ole; Thomsen, Erik Vilain

    2005-01-01

    A single-chip silicon MEMS CTDL multi sensor for use in aqueous environments is presented. The new sensor chip consists of a conductivity sensor based on platinum electrodes (C), an ion-implanted thermistor temperature sensor (T), a piezoresistive pressure sensor (D for depth/pressure) and an ion......-implanted p-n junction light sensor (L). The design and fabrication process is described. A temperature sensitivity of 0.8 × 10-3K-1 has been measured and detailed analysis of conductivity measurement data shows a cell constant of 81 cm-1....

  1. Two spatial light modulator system for laboratory simulation of random beam propagation in random media.

    Science.gov (United States)

    Wang, Fei; Toselli, Italo; Korotkova, Olga

    2016-02-10

    An optical system consisting of a laser source and two independent consecutive phase-only spatial light modulators (SLMs) is shown to accurately simulate a generated random beam (first SLM) after interaction with a stationary random medium (second SLM). To illustrate the range of possibilities, a recently introduced class of random optical frames is examined on propagation in free space and several weak turbulent channels with Kolmogorov and non-Kolmogorov statistics.

  2. Spatial extrapolation of light use efficiency model parameters to predict gross primary production

    Directory of Open Access Journals (Sweden)

    Karsten Schulz

    2011-12-01

    Full Text Available To capture the spatial and temporal variability of the gross primary production as a key component of the global carbon cycle, the light use efficiency modeling approach in combination with remote sensing data has shown to be well suited. Typically, the model parameters, such as the maximum light use efficiency, are either set to a universal constant or to land class dependent values stored in look-up tables. In this study, we employ the machine learning technique support vector regression to explicitly relate the model parameters of a light use efficiency model calibrated at several FLUXNET sites to site-specific characteristics obtained by meteorological measurements, ecological estimations and remote sensing data. A feature selection algorithm extracts the relevant site characteristics in a cross-validation, and leads to an individual set of characteristic attributes for each parameter. With this set of attributes, the model parameters can be estimated at sites where a parameter calibration is not possible due to the absence of eddy covariance flux measurement data. This will finally allow a spatially continuous model application. The performance of the spatial extrapolation scheme is evaluated with a cross-validation approach, which shows the methodology to be well suited to recapture the variability of gross primary production across the study sites.

  3. Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

    Science.gov (United States)

    Grant, Nicholas E.

    2016-01-01

    A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<1012 cm-3). PMID:26779939

  4. Light Trapping in Thin Film Silicon Solar Cells on Plastic Substrates

    NARCIS (Netherlands)

    de Jong, M.M.

    2013-01-01

    In the search for sustainable energy sources, solar energy can fulfil a large part of the growing demand. The biggest threshold for large-scale solar energy harvesting is the solar panel price. For drastic cost reductions, roll-to-roll fabrication of thin film silicon solar cells using plastic

  5. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    NARCIS (Netherlands)

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of

  6. Spatial and temporal variability of canopy cover and understory light in a Cerrado of Southern Brazil

    Directory of Open Access Journals (Sweden)

    JP. Lemos-Filho

    Full Text Available Canopy cover has significant effects on the understory environment, including upon light availability for seedling growth. The aim of the present study was to verify spatial heterogeneity and seasonal changes in the canopy cover of a dense Cerrado area, and their relationship to understory photosynthetic active radiation availability. Leaf area index (LAI values in the rainy season varied from 0.9 to 4.83, with 40% of the values ranging from 4.0 to 5.0, while in the dry season LAI varied from 0.74 to 3.3, with 53% of the values oscilating from 2.0 to 3.0. Understory light (Qi and the Lambert-Beer ratio (Qi/Qo were taken around noon on sunny days (between 11:00 AM and 1:00 PM. They were also statistically different (p < 0.01 between the dry and wet seasons, with 72% of sampled points in the rainy season presenting photosynthetic photon flux density (PPFD values lower than 250 μmol.m-2/s around noon, whereas in the dry season, most PPFD values varied from 1500 to 1817 μmol.m-2/s , thus providing high light availability for understory plants. In most of the studied sites, understory plants did not even receive enough light for 50% of their photosynthetic capacity in the wet season. In contrast during the dry season, Qi/Qo values of 0.8 to 1.0 were observed in more than 50% of the points, thereby allowing for photosynthetic light saturation. Thus, light variability around noon was higher during the dry season than in the wet season, its heterogeneity being related to spatial complexity in the canopy cover.

  7. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

    KAUST Repository

    Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab K.; Ooi, Boon S.

    2011-01-01

    High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

  8. Single-photon three-qubit quantum logic using spatial light modulators.

    Science.gov (United States)

    Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

    2017-09-29

    The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

  9. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  10. Spatially explicit feedbacks between seagrass meadow structure, sediment and light: Habitat suitability for seagrass growth

    Science.gov (United States)

    Carr, Joel; D'Odorico, Paul; McGlathery, Karen; Wiberg, Patricia L.

    2016-01-01

    In shallow coastal bays where nutrient loading and riverine inputs are low, turbidity, and the consequent light environment are controlled by resuspension of bed sediments due to wind-waves and tidal currents. High sediment resuspension and low light environments can limit benthic primary productivity; however, both currents and waves are affected by the presence of benthic plants such as seagrass. This feedback between the presence of benthic primary producers such as seagrass and the consequent light environment has been predicted to induce bistable dynamics locally. However, these vegetated areas influence a larger area than they footprint, including a barren adjacent downstream area which exhibits reduced shear stresses. Here we explore through modeling how the patchy structure of seagrass meadows on a landscape may affect sediment resuspension and the consequent light environment due to the presence of this sheltered region. Heterogeneous vegetation covers comprising a mosaic of randomly distributed patches were generated to investigate the effect of patch modified hydrodynamics. Actual cover of vegetation on the landscape was used to facilitate comparisons across landscape realizations. Hourly wave and current shear stresses on the landscape along with suspended sediment concentration and light attenuation characteristics were then calculated and spatially averaged to examine how actual cover and mean water depth affect the bulk sediment and light environment. The results indicate that an effective cover, which incorporates the sheltering area, has important controls on the distributions of shear stress, suspended sediment, light environment, and consequent seagrass habitat suitability. Interestingly, an optimal habitat occurs within a depth range where, if actual cover is reduced past some threshold, the bulk light environment would no longer favor seagrass growth.

  11. Spatially Explicit Estimation of Optimal Light Use Efficiency for Improved Satellite Data Driven Ecosystem Productivity Modeling

    Science.gov (United States)

    Madani, N.; Kimball, J. S.; Running, S. W.

    2014-12-01

    Remote sensing based light use efficiency (LUE) models, including the MODIS (MODerate resolution Imaging Spectroradiometer) MOD17 algorithm are commonly used for regional estimation and monitoring of vegetation gross primary production (GPP) and photosynthetic carbon (CO2) uptake. A common model assumption is that plants in a biome matrix operate at their photosynthetic capacity under optimal climatic conditions. A prescribed biome maximum light use efficiency parameter defines the maximum photosynthetic carbon conversion rate under prevailing climate conditions and is a large source of model uncertainty. Here, we used tower (FLUXNET) eddy covariance measurement based carbon flux data for estimating optimal LUE (LUEopt) over a North American domain. LUEopt was first estimated using tower observed daily carbon fluxes, meteorology and satellite (MODIS) observed fraction of photosynthetically active radiation (FPAR). LUEopt was then spatially interpolated over the domain using empirical models derived from independent geospatial data including global plant traits, surface soil moisture, terrain aspect, land cover type and percent tree cover. The derived LUEopt maps were then used as primary inputs to the MOD17 LUE algorithm for regional GPP estimation; these results were evaluated against tower observations and alternate MOD17 GPP estimates determined using Biome-specific LUEopt constants. Estimated LUEopt shows large spatial variability within and among different land cover classes indicated from a sparse North American tower network. Leaf nitrogen content and soil moisture are two important factors explaining LUEopt spatial variability. GPP estimated from spatially explicit LUEopt inputs shows significantly improved model accuracy against independent tower observations (R2 = 0.76; Mean RMSE plant trait information can explain spatial heterogeneity in LUEopt, leading to improved GPP estimates from satellite based LUE models.

  12. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

    Science.gov (United States)

    Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

    2016-03-07

    We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

  13. Light-Addressable Potentiometric Sensors for Quantitative Spatial Imaging of Chemical Species.

    Science.gov (United States)

    Yoshinobu, Tatsuo; Miyamoto, Ko-Ichiro; Werner, Carl Frederik; Poghossian, Arshak; Wagner, Torsten; Schöning, Michael J

    2017-06-12

    A light-addressable potentiometric sensor (LAPS) is a semiconductor-based chemical sensor, in which a measurement site on the sensing surface is defined by illumination. This light addressability can be applied to visualize the spatial distribution of pH or the concentration of a specific chemical species, with potential applications in the fields of chemistry, materials science, biology, and medicine. In this review, the features of this chemical imaging sensor technology are compared with those of other technologies. Instrumentation, principles of operation, and various measurement modes of chemical imaging sensor systems are described. The review discusses and summarizes state-of-the-art technologies, especially with regard to the spatial resolution and measurement speed; for example, a high spatial resolution in a submicron range and a readout speed in the range of several tens of thousands of pixels per second have been achieved with the LAPS. The possibility of combining this technology with microfluidic devices and other potential future developments are discussed.

  14. Comparison of Light Trapping in Silicon Nanowire and Surface Textured Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Rion Parsons

    2017-04-01

    Full Text Available The optics of axial silicon nanowire solar cells is investigated and compared to silicon thin-film solar cells with textured contact layers. The quantum efficiency and short circuit current density are calculated taking a device geometry into account, which can be fabricated by using standard semiconductor processing. The solar cells with textured absorber and textured contact layers provide a gain of short circuit current density of 4.4 mA/cm2 and 6.1 mA/cm2 compared to a solar cell on a flat substrate, respectively. The influence of the device dimensions on the quantum efficiency and short circuit current density will be discussed.

  15. Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina

    2012-01-01

    Roč. 9, 8/9 (2012), s. 717-731 ISSN 1475-7435 R&D Projects: GA AV ČR(CZ) IAA101120804; GA MŠk LC510; GA AV ČR KJB100100903 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * surface passivation * photoluminescence * lasing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  16. Light-induced spatial control of pH-jump reaction at smart gel interface.

    Science.gov (United States)

    Techawanitchai, Prapatsorn; Ebara, Mitsuhiro; Idota, Naokazu; Aoyagi, Takao

    2012-11-01

    We proposed here a 'smart' control of an interface movement of proton diffusion in temperature- and pH-responsive hydrogels using a light-induced spatial pH-jump reaction. A photoinitiated proton-releasing reaction of o-nitrobenzaldehyde (NBA) was integrated into poly(N-isopropylacrylamide-o-2-carboxyisopropylacrylamide) (P(NIPAAm-co-CIPAAm)) hydrogels. NBA-integrated hydrogels demonstrated quick release of proton upon UV irradiation, allowing the pH inside the gel to decrease below the pK(a) of P(NIPAAm-co-CIPAAm) within a minute. The NBA-integrated gel was shown to shrink rapidly upon UV irradiation without polymer "skin layer" formation due to a uniform decrease of pH inside the gel. Spatial control of gel shrinking was also created by irradiating UV light to a limited region of the gel through a photomask. The interface of proton diffusion ("active interface") gradually moved toward non-illuminated area. The apparent position of "active interface", however, did not change remarkably above the LCST, while protons continuously diffused outward direction. This is because the "active interface" also moved inward direction as gel shrank above the LCST. As a result, slow movement of the apparent interface was observed. The NBA-integrated gel was also successfully employed for the controlled release of an entrapped dextran in a light controlled manner. This system is highly promising as smart platforms for triggered and programmed transportation of drugs. Copyright © 2011 Elsevier B.V. All rights reserved.

  17. Spatial light modulators for full cross-connections in optical networks

    Science.gov (United States)

    Juday, Richard D. (Inventor)

    2004-01-01

    A polarization-independent optical switch is disclosed for switching at least one incoming beam from at least one input source to at least one output drain. The switch includes a polarizing beam splitter to split each of the at least one incoming beam into a first input beam and a second input beam, wherein the first input beam and the second input beams are independently polarized; a wave plate optically coupled to the second input beam for converting the polarization of the second input beam to an appropriately polarized second input beam; a beam combiner optically coupled to the first input beam and the modified second input beam, wherein the beam combiner accepts the first input beam and the modified second input beam to produce a combined beam; the combined beam is invariant to the polarization state of the input source's polarization; and a controllable spatial light modulator optically coupled to the combined beam, wherein the combined beam is diffracted by the controllable spatial light modulator to place light at a plurality of output locations.

  18. Automated measurement of spatial preference in the open field test with transmitted lighting.

    Science.gov (United States)

    Kulikov, Alexander V; Tikhonova, Maria A; Kulikov, Victor A

    2008-05-30

    New modification of the open field was designed to improve automation of the test. The main innovations were: (1) transmitted lighting and (2) estimation of probability to find pixels associated with an animal in the selected region of arena as an objective index of spatial preference. Transmitted (inverted) lighting significantly ameliorated the contrast between an animal and arena and allowed to track white animals with similar efficacy as colored ones. Probability as a measure of preference of selected region was mathematically proved and experimentally verified. A good correlation between probability and classic indices of spatial preference (number of region entries and time spent therein) was shown. The algorithm of calculation of probability to find pixels associated with an animal in the selected region was implemented in the EthoStudio software. Significant interstrain differences in locomotion and the central zone preference (index of anxiety) were shown using the inverted lighting and the EthoStudio software in mice of six inbred strains. The effects of arena shape (circle or square) and a novel object presence in the center of arena on the open field behavior in mice were studied.

  19. Super-resolution with an optically-addressable liquid crystal spatial light modulator

    International Nuclear Information System (INIS)

    McOrist, J.; Sharma, M.D.; Sheppard, C.J.R.

    2002-01-01

    Full text: An optically-addressable liquid crystal spatial light modulator has been used to generate super-resolving masks. This approach avoids problems of low efficiency and coupling between amplitude and phase modulation, that occur when using conventional liquid crystal modulators. When addressed by a programmed light intensity distribution, it allows filters to be changed rapidly to modify the response of a system or permit the investigation of different filter designs. The device used is not pixellated, with a spatial resolution of 30 line pairs/mm over an area 18mm X 18mm, and can achieve continuously-variable phase modulation up to 1.5 wavelengths. The system consists of a write-beam that is collimated from a white-light source. An input mask was used in our experiments determines the modulation pattern of the read-beam. The read-beam from a HeNe laser reflects from the modulator and is focused by a microscope objective. The value of the phase change induced by the transparent regions of the mask can be altered continuously by adjusting the brightness of the write-beam. We have used this system to attain super-resolution by simple Toraldo filters, consisting of arrays of rings. Copyright (2002) Australian Society for Electron Microscopy Inc

  20. Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

    KAUST Repository

    Abdallah, Amir

    2017-09-22

    We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell\\'s configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

  1. Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

    KAUST Repository

    Abdallah, Amir; Daif, Ounsi El; Aï ssa, Brahim; Kivambe, Maulid; Tabet, Nouar; Seif, Johannes; Haschke, Jan; Cattin, Jean; Boccard, Mathieu; De Wolf, Stefaan; Ballif, Christophe

    2017-01-01

    We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.

  2. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  3. Spatially resolved determination of lattice distortions in silicon nanostructures by means of electron-backscattering diffraction

    International Nuclear Information System (INIS)

    Krause, Michael

    2013-01-01

    In the submitted thesis, a novel combined approach of both focused ion beam (FIB) based target preparation and strain determination using electron backscatter diffraction (EBSD) in semiconductor nanostructures is presented. In the first part, a powerful cross-correlation algorithm for detecting small feature shifts within EBSD patterns and, consequently, determining the strain, is presented. The corresponding strain sensitivity is demonstrated using dynamically simulated diffraction patterns. Furthermore, novel procedures for automated pattern analysis are introduced. Results of systematic studies concerning the influence of ion species, ion energy and dose density on the surface quality of silicon surfaces are presented in the second part. For that matter, the assessment of surface amorphization and rippling is based on high resolution microstructural diagnostics (TEM, AFM, Raman) and molecular dynamics simulation. The high application potential of combined FIB preparation and strain analysis using EBSD is exemplarily demonstrated for a 60 nm thick sSOI-sample. The good agreement with established techniques like Raman spectroscopy and X-ray diffraction is also shown.

  4. Generating shaped femtosecond pulses in the far infrared using a spatial light modulator and difference frequency generation

    CSIR Research Space (South Africa)

    Botha, N

    2010-08-31

    Full Text Available Femtosecond pulse shaping can be done by different kinds of pulse shapers, such as liquid crystal spatial light modulators (LC SLM), acousto optic modulators (AOM) and deformable and movable mirrors. A few applications where pulse shaping...

  5. Improvement in the photocurrent collection due to enhanced absorption of light by synthesizing staggered layers of silver nanoclusters in silicon

    International Nuclear Information System (INIS)

    Dhoubhadel, Mangal S.; Lakshantha, Wickramaarachchige J.; Rout, Bibhudutta; McDaniel, Floyd D.; Lightbourne, Sherard; D’Souza, Francis

    2015-01-01

    The quest for increased efficiency of solar cells has driven the research in synthesizing photovoltaic cells involving Si based materials. The efficiency of solar cells involving crystalline Si is stalled around 25% for the last decade. Recently Shi et al. had shown that light trapping can be enhanced by fabricating double layers of Ag nanoparticles in silicon based materials. The light trapping is critically important in a photo devices such as solar cells in order to increase light absorption and efficiency. In the present work, we report enhancement in the absorption of light in Ag ion implanted Si substrates. Multiple low energies Ag ions, ranging from ∼80 keV to ∼30 keV, with different fluences ranging from ∼1 × 10 16 to ∼1 × 10 17 atoms/cm 2 were sequentially implanted into commercially available Si (100) substrates followed by post-thermal annealing to create different sizes of Ag nanoclusters (NC) at different depths in the top 100 nm of the Si. The absorbance of light is increased in Ag implanted Si with a significant increase in the current collection in I-V (current-voltage) photo switching measurements. The experimental photovoltaic cells fabricated with the Ag-implanted Si samples were optically characterized under AM (air mass) 1.5 solar radiation conditions (∼1.0 kW/m 2 ). An enhancement in the charge collection were measured in the annealed samples, where prominent Ag NCs were formed in the Si matrix compared to the as-implanted samples with amorphous layers. We believe the enhancement of the photo-current density from the samples with Ag NC is due to the improvement of efficiency of charge collection of e − -h + pairs produced by the incident light

  6. Index mismatch aberration correction over long working distances using spatial light modulation.

    Science.gov (United States)

    Gjonaj, Bergin; Johnson, Patrick; Bonn, Mischa; Domke, Katrin F

    2012-11-20

    For many microscopy applications, millimeters-long free working distances (LWD) are required. However, the high resolution and contrast of LWD objectives operated in air are lost when introducing glass and/or liquid with the sample. We propose to use spatial light modulation to correct for such beam aberrations caused by refractive index mismatches. Focusing a monochromatic laser beam with a 10 mm working distance air objective (50×, 0.5 NA) through air, glass, and water, we manage to restore a sharp, intense focus (FWHMLWD air objectives, extending their usage beyond applications in air.

  7. Simulating atmospheric turbulence using a phase-only spatial light modulator

    CSIR Research Space (South Africa)

    Burger, L

    2008-04-01

    Full Text Available is zero and the outer scale is infinity. These assumptions lead to a well-defined distribution for the randomness in the refractive index of the atmosphere, which can be applied in the laboratory, giving a good approximation for a real atmosphere.1.... There are two basic aims: first, to expound on the steps required to actually simulate atmospheric turbulence in the laboratory, and second, to point out some of the limitations in using spatial light modula- Research Articles South African Journal of Science...

  8. Orthogonal decomposition of a optical random field using a spatial modulator of light of liquid crystal

    International Nuclear Information System (INIS)

    Velez Juarez, Esteban; Rodriguez Garciapinna, Jorge L.; Ostrovsky, Andrey S.

    2016-01-01

    A technique for experimental determining the coherent-mode structure of electromagnetic field is proposed. This technique is based on the coherence measurements of the field in some reference basis and represents a nontrivial vector generalization of the dual-mode field correlation method recently reported by F. Ferreira and M. Belsley. The justifiability and efficiency of the proposed technique is illustrated by an example of determining the coherent-mode structure of some specially generated and experimentally characterized secondary electromagnetic source using a spatial modulator of light of liquid crystal (SLM-LC). (Author)

  9. Gray Scale Operation Of A Multichannel Optical Convolver Using The Semetex Magnetooptic Spatial Light Modulator

    Science.gov (United States)

    Davis, Jeffrey A.; Day, Timothy; Lilly, Roger A.; Taber, Donald B.; Liu, Hua-Kuang; Davis, J. A.; Day, T.; Lilly, R. A.; Taber, D. B.; Liu, H.-K.

    1988-02-01

    We present a new multichannel optical correlator/convolver architecture which uses an acoustooptic light modulator (AOLM) for the input channel and a Semetex magnetooptic spatial light modulator (MOSLM) for the set of parallel reference channels. Details of the anamorphic optical system are discussed. Experimental results illustrate use of the system as a convolver for performing digital multiplication by analog convolution (DMAC). A limited gray scale capability for data stored by the MOSLM is demonstrated by implementing this DMAC algorithm with trinary logic. Use of the MOSLM allows the number of parallel channels for the convolver to be increased significantly compared with previously reported techniques while retaining the capability for updating both channels at high speeds.

  10. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully...

  11. Female Sprague Dawley Rats Show Impaired Spatial Memory in the 8-Arm Radial Maze under Dim Blue and Red Light

    Directory of Open Access Journals (Sweden)

    Michael Pirchl

    2010-01-01

    Full Text Available Light intensity and wavelength strongly influence mood and cognition in humans and rodent animal models. The aim of the present study was to explore if dim white (7.6–17.7 lux , blue (1.3–2.3 lux, and red light (0.8–1.4 lux affect spatial memory of male and female Sprague Dawley rats in the 8-arm radial maze. Our data show that spatial memory significantly improved within 5 daily learning sessions (each 5 trials under dim white light, which was not different between male and female rats. However, dim blue and red light significantly reduced spatial learning of female rats in the 8-arm radial maze in the last training session (session 5. In conclusion, we suggest that female Sprague Dawley rats show reduced learning under blue and red light.

  12. Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Paetzold, Ulrich W., E-mail: u.paetzold@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Meier, Matthias, E-mail: ma.meier@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Moulin, Etienne, E-mail: e.moulin@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Smirnov, Vladimir, E-mail: v.smirnov@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Pieters, Bart E., E-mail: b.pieters@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Rau, Uwe, E-mail: u.rau@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany); Carius, Reinhard, E-mail: r.carius@fz-juelich.de [IEK5-Photovoltaik, Forschungszentrum Juelich, D-52425 Juelich (Germany)

    2013-05-15

    In this work, we investigate the light trapping of thin-film silicon solar cells which apply plasmonic Ag back contacts with non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. The measured reflectance spectra of the Ag back contacts with non-ordered nanostructures in air are well reproduced in reflectance spectra derived from the three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. The light–matter interaction of these nanostructures is given by localized surface plasmons and, thus, the measured diffuse reflectance of the back contacts is attributed to plasmon-induced light scattering. A significant plasmonic light-trapping effect in n-i-p substrate-type μc-Si:H thin-film solar cell prototypes which apply a Ag back contact with non-ordered nanostructures is identified when compared with flat reference solar cells.

  13. Plasmonic back contacts with non-ordered Ag nanostructures for light trapping in thin-film silicon solar cells

    International Nuclear Information System (INIS)

    Paetzold, Ulrich W.; Meier, Matthias; Moulin, Etienne; Smirnov, Vladimir; Pieters, Bart E.; Rau, Uwe; Carius, Reinhard

    2013-01-01

    In this work, we investigate the light trapping of thin-film silicon solar cells which apply plasmonic Ag back contacts with non-ordered Ag nanostructures. The preparation, characterization and three-dimensional electromagnetic simulations of these back contacts with various distributions of non-ordered Ag nanostructures are presented. The measured reflectance spectra of the Ag back contacts with non-ordered nanostructures in air are well reproduced in reflectance spectra derived from the three-dimensional electromagnetic simulations of isolated nanostructures on Ag back contacts. The light–matter interaction of these nanostructures is given by localized surface plasmons and, thus, the measured diffuse reflectance of the back contacts is attributed to plasmon-induced light scattering. A significant plasmonic light-trapping effect in n-i-p substrate-type μc-Si:H thin-film solar cell prototypes which apply a Ag back contact with non-ordered nanostructures is identified when compared with flat reference solar cells

  14. Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

    Science.gov (United States)

    Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

    2015-01-01

    Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

  15. Experimental investigation of silicon photomultipliers as compact light readout systems for gamma-ray spectroscopy applications in fusion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Nocente, M., E-mail: massimo.nocente@mib.infn.it; Gorini, G. [Dipartimento di Fisica “G. Occhialini,” Università degli Studi di Milano-Bicocca, Milano (Italy); Istituto di Fisica del Plasma “P. Caldirola,” EURATOM-ENEA-CNR Association, Milano (Italy); Fazzi, A.; Lorenzoli, M.; Pirovano, C. [Dipartimento di Energia, CeSNEF, Politecnico di Milano, Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, Milano (Italy); Tardocchi, M. [Istituto di Fisica del Plasma “P. Caldirola,” EURATOM-ENEA-CNR Association, Milano (Italy); Cazzaniga, C.; Rebai, M. [Dipartimento di Fisica “G. Occhialini,” Università degli Studi di Milano-Bicocca, Milano (Italy); Uboldi, C.; Varoli, V. [Dipartimento di Energia, CeSNEF, Politecnico di Milano, Milano (Italy)

    2014-11-15

    A matrix of Silicon Photo Multipliers has been developed for light readout from a large area 1 in. × 1 in. LaBr{sub 3} crystal. The system has been characterized in the laboratory and its performance compared to that of a conventional photo multiplier tube. A pulse duration of 100 ns was achieved, which opens up to spectroscopy applications at high counting rates. The energy resolution measured using radioactive sources extrapolates to 3%–4% in the energy range E{sub γ} = 3–5 MeV, enabling gamma-ray spectroscopy measurements at good energy resolution. The results reported here are of relevance in view of the development of compact gamma-ray detectors with spectroscopy capabilities, such as an enhanced gamma-ray camera for high power fusion plasmas, where the use of photomultiplier is impeded by space limitation and sensitivity to magnetic fields.

  16. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    Energy Technology Data Exchange (ETDEWEB)

    Andrianov, A V; Valov, P M; Sukhanov, V L; Tuchkevich, V V; Shmidt, N M [AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

    1980-05-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO/sub 2/-laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO/sub 2/-laser irradiation.

  17. Photoeffect on the p-n silicon junction under conditions of interband heating of carriers by light

    International Nuclear Information System (INIS)

    Andrianov, A.V.; Valov, P.M.; Sukhanov, V.L.; Tuchkevich, V.V.; Shmidt, N.M.

    1980-01-01

    Photoeffect on the p-n silicon junction conditioned by interband heating of carriers by the CO 2 -laser light has been studied experimentally at room temperature and under nonstationary conditions. Photoelectromotive force (p.e.m.f.) with the sign opposite to the value p.e.m.f. appears in the case of direct displacement of p-n structures. The p.e.m.f. value increases with the increase of direct desplacement. Photoelectrons are shown to make the main contribution into the mechanism of p.e.m.f. formation. Lateral p.e.m.f. connected with spreading currents in the direction parallel to the surface of the p-n junction appears in the p-n structure base. It has been found out that structures with highly alloyed emitter at reverse displacement operates under standard photodiod conditions, that is due to the semiconductor lattice heating by CO 2 -laser irradiation

  18. Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

    Energy Technology Data Exchange (ETDEWEB)

    Arguirov, Tzanimir; Kittler, Martin [IHP - Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); IHP/BTU Joint Lab BTU Cottbus, Konrad-Wachsmann-Allee 1, 03013 Cottbus (Germany); Wenger, Christian; Lukosius, Mindaugas [IHP - Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Mchedlidze, Teimuraz [IHP/BTU Joint Lab BTU Cottbus, Konrad-Wachsmann-Allee 1, 03013 Cottbus (Germany); Reiche, Manfred [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2011-04-15

    We report on electro-luminescence from metal-insulator-semiconductor diodes (MISLED). MISLEDs prepared on silicon with HfO2 layers of different thicknesses were investigated and their properties compared with such prepared by using SiO2 insulator layer. The role of the insulator layer was studied in view of the efficiency of the band-to-band radiation from silicon. We show that the luminescence efficiency depends on the dielectric constant of the insulator as well as on its ability to conduct carriers by tunnelling. Efficiency enhancement of 3.3 times was detected when the SiO{sub 2} insulator was substituted by HfO{sub 2} in the MIS emitter. Optimal injection current exists, which leads to a maximal efficiency of the luminescence. The optimal current depends strongly on the thickness of the oxide. We relate the existence of an optimal current with the depth at which the injected minority carriers recombine radiatively. Thus the electric field in the semiconductor and the surface recombination are the factors determining the optimal injection (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. An event-related potential study on the interaction between lighting level and stimulus spatial location

    Directory of Open Access Journals (Sweden)

    Luis eCarretié

    2015-11-01

    Full Text Available Due to heterogeneous photoreceptor distribution, spatial location of stimulation is crucial to study visual brain activity in different light environments. This unexplored issue was studied through occipital event-related potentials (ERPs recorded from 40 participants in response to discrete visual stimuli presented at different locations and in two environmental light conditions, low mesopic (L, 0.03 lux and high mesopic (H, 6.5 lux, characterized by a differential photoreceptor activity balance: rod>cone and rodspatial location of stimulation: differences were greater in response to peripheral stimuli than to stimuli presented at fixation. Moreover, in the former case, significance of L vs. H differences was even stronger in response to stimuli presented at the horizontal than at the vertical periphery. These low vs. high mesopic differences may be explained by photoreceptor activation and their retinal distribution, and confirm that ERPs discriminate between rod- and cone-originated visual processing.

  20. Study of high energy ion implantation of boron and oxygen in silicon

    International Nuclear Information System (INIS)

    Thevenin, P.

    1991-06-01

    Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

  1. Manipulating femtosecond laser interactions in bulk glass and thin-film with spatial light modulation (Conference Presentation)

    Science.gov (United States)

    Alimohammadian, Ehsan; Ho, Stephen; Ertorer, Erden; Gherghe, Sebastian; Li, Jianzhao; Herman, Peter R.

    2017-03-01

    Spatial Light Modulators (SLM) are emerging as a power tool for laser beam shaping whereby digitally addressed phase shifts can impose computer-generated hologram patterns on incoming laser light. SLM provide several additional advantages with ultrashort-pulsed lasers in controlling the shape of both surface and internal interactions with materials. Inside transparent materials, nonlinear optical effects can confine strong absorption only to the focal volume, extend dissipation over long filament tracks, or reach below diffraction-limited spot sizes. Hence, SLM beam shaping has been widely adopted for laser material processing applications that include parallel structuring, filamentation, fiber Bragg grating formation and optical aberration correction. This paper reports on a range of SLM applications we have studied in femtosecond processing of transparent glasses and thin films. Laser phase-fronts were tailored by the SLM to compensate for spherical surface aberration, and to further address the nonlinear interactions that interplay between Kerr-lens self-focusing and plasma defocusing effects over shallow and deep focusing inside the glass. Limits of strong and weak focusing were examined around the respective formation of low-loss optical waveguides and long uniform filament tracks. Further, we have employed the SLM for beam patterning inside thin film, exploring the limits of phase noise, resolution and fringe contrast during interferometric intra-film structuring. Femtosecond laser pulses of 200 fs pulse duration and 515 nm wavelength were shaped by a phase-only LCOS-SLM (Hamamatsu X10468-04). By imposing radial phase profiles, axicon, grating and beam splitting gratings, volume shape control of filament diameter, length, and uniformity as well as simultaneous formation of multiple filaments has been demonstrated. Similarly, competing effects of spherical surface aberration, self-focusing, and plasma de-focusing were studied and delineated to enable formation

  2. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography.

    Science.gov (United States)

    Van Elburg, Devin J; Noble, Scott D; Hagey, Simone; Goertzen, Andrew L

    2018-02-26

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials ('100MP', 'A100', and 'GPA') were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude degradation

  3. Comparison of acrylic polymer adhesive tapes and silicone optical grease in light sharing detectors for positron emission tomography

    Science.gov (United States)

    Van Elburg, Devin J.; Noble, Scott D.; Hagey, Simone; Goertzen, Andrew L.

    2018-03-01

    Optical coupling is an important factor in detector design as it improves optical photon transmission by mitigating internal reflections at light-sharing boundaries. In this work we compare optical coupling materials, namely double-sided acrylic polymer tapes and silicone optical grease (SiG), in the context of positron emission tomography. Four double-sided tapes from 3 M of varying thicknesses (0.229 mm-1.016 mm) and adhesive materials (‘100MP’, ‘A100’, and ‘GPA’) were characterized with spectrophotometer measurements as well as photopeak amplitude and energy resolution measurements using lutetium-yttrium oxy-orthosilicate (LYSO) coupled to photomultiplier tubes (PMT) or silicon photomultipliers (SiPMs). Transmission spectra from the spectrophotometer showed over 80% transmission for all tapes at 420 nm and above, with 89.6% and 88.8% transmission for the 0.508 mm and 1.016 mm thick GPA tapes, respectively, at 420 nm. Measurements with single-pixel LYSO-PMT and 4  ×  4 array (one-to-one coupled) LYSO-SiPM setups determined that SiG had the greatest photopeak amplitude, with tapes showing 2.1%-14.8% reduction in photopeak amplitude with respect to SiG. Energy resolution changed by less than 4% on a relative basis between tapes and SiG with PMT measurements, however for the SiPM array measurements the energy resolution improved from 15.6%  ±  2.7% full-width at half-maximum to 11.4%  ±  1.2% for SiG and 1 mm GPA respectively. Data acquired with dual-layer offset LYSO arrays (light sharing detector designs) demonstrated that a detector coupled with 1 mm thick GPA tape produced equivalent detector flood histograms to those from a design coupled with SiG and a 1 mm thick glass lightguide. No significant degradation in photopeak amplitude and energy resolution was observed over five months of measurements, indicating the tapes maintain their coupling integrity over several months. Though minimal photopeak amplitude

  4. Female Sprague Dawley Rats Show Impaired Spatial Memory in the 8-Arm Radial Maze under Dim Blue and Red Light

    OpenAIRE

    Pirchl, Michael; Kemmler, Georg; Humpel, Christian

    2010-01-01

    Light intensity and wavelength strongly influence mood and cognition in humans and rodent animal models. The aim of the present study was to explore if dim white (7.6–17.7 lux) , blue (1.3–2.3 lux), and red light (0.8–1.4 lux) affect spatial memory of male and female Sprague Dawley rats in the 8-arm radial maze. Our data show that spatial memory significantly improved within 5 daily learning sessions (each 5 trials) under dim white light, which was not different between male and female rats. ...

  5. Visible light emission from silicon implanted and annealed SiO2layers

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

    1997-01-01

    Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

  6. Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

    Science.gov (United States)

    Torchynska, T.; Khomenkova, L.; Slaoui, A.

    2018-04-01

    Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.

  7. Nanocrystalline silicon as the light emitting material of a field emission display device

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

    2008-01-01

    A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

  8. Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

    KAUST Repository

    Li, Ting; Li, Jun; Zhang, Qiang; Blazeby, Emma; Shang, Congxiao; Xu, Hualong; Zhang, Xixiang; Chao, Yimin

    2016-01-01

    Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits

  9. Son et lumière: Sound and light effects on spatial distribution and swimming behavior in captive zebrafish.

    Science.gov (United States)

    Shafiei Sabet, Saeed; Van Dooren, Dirk; Slabbekoorn, Hans

    2016-05-01

    Aquatic and terrestrial habitats are heterogeneous by nature with respect to sound and light conditions. Fish may extract signals and exploit cues from both ambient modalities and they may also select their sound and light level of preference in free-ranging conditions. In recent decades, human activities in or near water have altered natural soundscapes and caused nocturnal light pollution to become more widespread. Artificial sound and light may cause anxiety, deterrence, disturbance or masking, but few studies have addressed in any detail how fishes respond to spatial variation in these two modalities. Here we investigated whether sound and light affected spatial distribution and swimming behavior of individual zebrafish that had a choice between two fish tanks: a treatment tank and a quiet and light escape tank. The treatments concerned a 2 × 2 design with noisy or quiet conditions and dim or bright light. Sound and light treatments did not induce spatial preferences for the treatment or escape tank, but caused various behavioral changes in both spatial distribution and swimming behavior within the treatment tank. Sound exposure led to more freezing and less time spent near the active speaker. Dim light conditions led to a lower number of crossings, more time spent in the upper layer and less time spent close to the tube for crossing. No interactions were found between sound and light conditions. This study highlights the potential relevance for studying multiple modalities when investigating fish behavior and further studies are needed to investigate whether similar patterns can be found for fish behavior in free-ranging conditions. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. A multi-modal stereo microscope based on a spatial light modulator.

    Science.gov (United States)

    Lee, M P; Gibson, G M; Bowman, R; Bernet, S; Ritsch-Marte, M; Phillips, D B; Padgett, M J

    2013-07-15

    Spatial Light Modulators (SLMs) can emulate the classic microscopy techniques, including differential interference (DIC) contrast and (spiral) phase contrast. Their programmability entails the benefit of flexibility or the option to multiplex images, for single-shot quantitative imaging or for simultaneous multi-plane imaging (depth-of-field multiplexing). We report the development of a microscope sharing many of the previously demonstrated capabilities, within a holographic implementation of a stereo microscope. Furthermore, we use the SLM to combine stereo microscopy with a refocusing filter and with a darkfield filter. The instrument is built around a custom inverted microscope and equipped with an SLM which gives various imaging modes laterally displaced on the same camera chip. In addition, there is a wide angle camera for visualisation of a larger region of the sample.

  11. Efficient illumination of spatial light modulators for optical trapping and manipulation

    DEFF Research Database (Denmark)

    Bañas, Andrew Rafael; Kopylov, Oleksii; Raaby, Peter

    Energy efficiency is always desirable. This is particularly true with lasers that find many applications in research and industry. Combined with spatial light modulators (SLMs) lasers are used for optical trapping and manipulation, sorting, microscopy or biological stimulation1. Besides efficiency....... We have also shown dynamic SLM-generated patterns for materials processing and biological research. To efficiently illuminate an SLM, we used a compact pen-sized GPC-LS in place of an iris. For the same input power, hologram reconstructions are ~3x brighter or alternatively ~3x more focal spots can...... be addressed. This allows better response or increased parallel addressing for e.g. optical manipulation and sorting. Simple yet effective, a GPC-LS could save substantial power in applications that truncate lasers to a specific shape....

  12. A low-voltage high-speed terahertz spatial light modulator using active metamaterial

    Directory of Open Access Journals (Sweden)

    Saroj Rout

    2016-11-01

    Full Text Available An all solid-state metamaterial based terahertz (THz spatial light modulator (SLM is presented which uses high mobility 2DEG to manipulate the metamaterial resonant frequency (0.45 THz leading to terahertz wave modulation. The 2DEG is created by embedding pseudomorphic high-electron mobility transistors in the capacitive gap of each electrical-LC resonator, allowing the charge density to be controlled with very low voltage (1 V and modulating speeds up to 10 MHz while consuming sub-milliwatt power. We have demonstrated our SLM as a 2 × 2 pixel array operating around 0.45 THz by raster scanning a 6 × 6 image of an occluded metal object behind a thick polystyrene screen using a single-pixel THz imaging setup.

  13. Topography and refractometry of sperm cells using spatial light interference microscopy.

    Science.gov (United States)

    Liu, Lina; Kandel, Mikhail E; Rubessa, Marcello; Schreiber, Sierra; Wheeler, Mathew B; Popescu, Gabriel

    2018-02-01

    Characterization of spermatozoon viability is a common test in treating infertility. Recently, it has been shown that label-free, phase-sensitive imaging can provide a valuable alternative for this type of assay. We employ spatial light interference microscopy (SLIM) to perform high-accuracy single-cell phase imaging and decouple the average thickness and refractive index information for the population. This procedure was enabled by quantitative-phase imaging cells on media of two different refractive indices and using a numerical tool to remove the curvature from the cell tails. This way, we achieved ensemble averaging of topography and refractometry of 100 cells in each of the two groups. The results show that the thickness profile of the cell tail goes down to 150 nm and the refractive index can reach values of 1.6 close to the head. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

  14. Optical Implementation Of The Hopfield Model Using A Spatial Light Modulator Discussion Of Properties And Performance

    Science.gov (United States)

    Torzynski, Marc

    1989-01-01

    In this paper we propose an optical design for implementation of neuronic Hopfield network. We describe the algorithm and its potential possibilities as associative (or content addressable) memory. We then describe the optical set (using a magneto-optic spatial light modulator) and explaning its operating mode: the binary transparency of the SLM does not allow a direct and accurate experimental realisation of the theoretical algorithm. However, there is a particular setup that can implemented it powerfully but with a reduction of the effective number of neurons. The operating speed is then evaluated from the characteristics of the SLM "Sight-Mod" manufactured by SEMETEX corp.: the maximun operating frequency seems limited by the speed of the optical valve.

  15. Efficient and accurate laser shaping with liquid crystal spatial light modulators

    Energy Technology Data Exchange (ETDEWEB)

    Maxson, Jared M.; Bartnik, Adam C.; Bazarov, Ivan V. [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States)

    2014-10-27

    A phase-only spatial light modulator (SLM) is capable of precise transverse laser shaping by either functioning as a variable phase grating or by serving as a variable mask via polarization rotation. As a phase grating, the highest accuracy algorithms, based on computer generated holograms (CGHs), have been shown to yield extended laser shapes with <10% rms error, but conversely little is known about the experimental efficiency of the method in general. In this work, we compare the experimental tradeoff between error and efficiency for both the best known CGH method and polarization rotation-based intensity masking when generating hard-edged flat top beams. We find that the masking method performs comparably with CGHs, both having rms error < 10% with efficiency > 15%. Informed by best practices for high efficiency from a SLM phase grating, we introduce an adaptive refractive algorithm which has high efficiency (92%) but also higher error (16%), for nearly cylindrically symmetric cases.

  16. Adaptive electron beam shaping using a photoemission gun and spatial light modulator

    Science.gov (United States)

    Maxson, Jared; Lee, Hyeri; Bartnik, Adam C.; Kiefer, Jacob; Bazarov, Ivan

    2015-02-01

    The need for precisely defined beam shapes in photoelectron sources has been well established. In this paper, we use a spatial light modulator and simple shaping algorithm to create arbitrary, detailed transverse laser shapes with high fidelity. We transmit this shaped laser to the photocathode of a high voltage dc gun. Using beam currents where space charge is negligible, and using an imaging solenoid and fluorescent viewscreen, we show that the resultant beam shape preserves these detailed features with similar fidelity. Next, instead of transmitting a shaped laser profile, we use an active feedback on the unshaped electron beam image to create equally accurate and detailed shapes. We demonstrate that this electron beam feedback has the added advantage of correcting for electron optical aberrations, yielding shapes without skew. The method may serve to provide precisely defined electron beams for low current target experiments, space-charge dominated beam commissioning, as well as for online adaptive correction of photocathode quantum efficiency degradation.

  17. Visualizing Escherichia coli sub-cellular structure using sparse deconvolution Spatial Light Interference Tomography.

    Directory of Open Access Journals (Sweden)

    Mustafa Mir

    Full Text Available Studying the 3D sub-cellular structure of living cells is essential to our understanding of biological function. However, tomographic imaging of live cells is challenging mainly because they are transparent, i.e., weakly scattering structures. Therefore, this type of imaging has been implemented largely using fluorescence techniques. While confocal fluorescence imaging is a common approach to achieve sectioning, it requires fluorescence probes that are often harmful to the living specimen. On the other hand, by using the intrinsic contrast of the structures it is possible to study living cells in a non-invasive manner. One method that provides high-resolution quantitative information about nanoscale structures is a broadband interferometric technique known as Spatial Light Interference Microscopy (SLIM. In addition to rendering quantitative phase information, when combined with a high numerical aperture objective, SLIM also provides excellent depth sectioning capabilities. However, like in all linear optical systems, SLIM's resolution is limited by diffraction. Here we present a novel 3D field deconvolution algorithm that exploits the sparsity of phase images and renders images with resolution beyond the diffraction limit. We employ this label-free method, called deconvolution Spatial Light Interference Tomography (dSLIT, to visualize coiled sub-cellular structures in E. coli cells which are most likely the cytoskeletal MreB protein and the division site regulating MinCDE proteins. Previously these structures have only been observed using specialized strains and plasmids and fluorescence techniques. Our results indicate that dSLIT can be employed to study such structures in a practical and non-invasive manner.

  18. From physics to devices light emissions in silicon from physics to devices

    CERN Document Server

    Lockwood, David J; Weber, Eicke R; Lockwood, David J

    1997-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  19. Use of silicon drift detectors for the detection of medium-light elements in PIXE

    International Nuclear Information System (INIS)

    Alberti, R.; Bjeoumikhov, A.; Grassi, N.; Guazzoni, C.; Klatka, T.; Longoni, A.; Quattrone, A.

    2008-01-01

    In order to fully exploit in PIXE the superior performance of silicon drift detectors especially for the detection of low- and medium-energy X-rays, avoiding in particular the negative effects of backscattered particles, we developed a custom spectrometer based on a 10 mm 2 chip with a thermoelectric Peltier cooler and home-designed front-end electronics, coupled to a weakly focusing polycapillary lens. This paper briefly describes the detector + lens assembly and reports the results of first tests carried out at an external beam line of the LABEC laboratory in Florence. Excellent energy resolution is achieved under real operating conditions in a PIXE run (measured FWHM at 1 keV is 81 eV with a count-rate of 480 cps) and also the lineshapes are very good (FW1/10M over FWHM ratio is 2.1). As a whole, our preliminary tests gave encouraging results and also helped to point out some aspects which it is worthwhile to investigate further (e.g. how X-ray peak intensity ratios may be affected by inaccurate lens alignment), in order to profit fully from such a good performance of the spectrometer

  20. Gold-silicon nanofiber synthesized by femtosecond laser radiation for enhanced light absorptance.

    Science.gov (United States)

    Mahmood, Abdul Salam; Venkatakrishnan, Krishnan; Tan, Bo

    2014-01-01

    In this study, we devised a new concept for the precise nanofabrication of Au-Si fibrous nanostructures using megahertz femtosecond laser irradiation in air and atmospheric pressure conditions. The weblike fibrous nanostructures of Au thin layer on silicon substrate, which are proposed for the application of solar cells, exhibit a specific improvement of the optical properties in visible wavelength. Varying numbers of laser interaction pulses were used to control the synthesis of the nanofibrous structures. Electron microscopy analysis revealed that the nanostructures are formed due to the aggregation of polycrystalline nanoparticles of the respective constituent materials with diameters varying between 30 and 90 nm. Measurement of the reflectance through a spectroradiometer showed that the coupling of incident electromagnetic irradiation was greatly improved over the broadband wavelength range. Lower reflectance intensity was obtained with a higher number of laser pulses due to the bulk of gold nanoparticles being agglomerated by the mechanism of fusion. This forms interweaving fibrous nanostructures which reveal a certain degree of assembly. 81.05.Zx; 81.07.-b.

  1. Demonstration of spatial-light-modulation-based four-wave mixing in cold atoms

    Science.gov (United States)

    Juo, Jz-Yuan; Lin, Jia-Kang; Cheng, Chin-Yao; Liu, Zi-Yu; Yu, Ite A.; Chen, Yong-Fan

    2018-05-01

    Long-distance quantum optical communications usually require efficient wave-mixing processes to convert the wavelengths of single photons. Many quantum applications based on electromagnetically induced transparency (EIT) have been proposed and demonstrated at the single-photon level, such as quantum memories, all-optical transistors, and cross-phase modulations. However, EIT-based four-wave mixing (FWM) in a resonant double-Λ configuration has a maximum conversion efficiency (CE) of 25% because of absorptive loss due to spontaneous emission. An improved scheme using spatially modulated intensities of two control fields has been theoretically proposed to overcome this conversion limit. In this study, we first demonstrate wavelength conversion from 780 to 795 nm with a 43% CE by using this scheme at an optical density (OD) of 19 in cold 87Rb atoms. According to the theoretical model, the CE in the proposed scheme can further increase to 96% at an OD of 240 under ideal conditions, thereby attaining an identical CE to that of the previous nonresonant double-Λ scheme at half the OD. This spatial-light-modulation-based FWM scheme can achieve a near-unity CE, thus providing an easy method of implementing an efficient quantum wavelength converter for all-optical quantum information processing.

  2. Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

    Science.gov (United States)

    Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

    2017-12-13

    We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

  3. Plasmonic Nanostructure for Enhanced Light Absorption in Ultrathin Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jinna He

    2012-01-01

    Full Text Available The performances of thin film solar cells are considerably limited by the low light absorption. Plasmonic nanostructures have been introduced in the thin film solar cells as a possible solution around this issue in recent years. Here, we propose a solar cell design, in which an ultrathin Si film covered by a periodic array of Ag strips is placed on a metallic nanograting substrate. The simulation results demonstrate that the designed structure gives rise to 170% light absorption enhancement over the full solar spectrum with respect to the bared Si thin film. The excited multiple resonant modes, including optical waveguide modes within the Si layer, localized surface plasmon resonance (LSPR of Ag stripes, and surface plasmon polaritons (SPP arising from the bottom grating, and the coupling effect between LSPR and SPP modes through an optimization of the array periods are considered to contribute to the significant absorption enhancement. This plasmonic solar cell design paves a promising way to increase light absorption for thin film solar cell applications.

  4. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  5. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  6. Self-organized broadband light trapping in thin film amorphous silicon solar cells.

    Science.gov (United States)

    Martella, C; Chiappe, D; Delli Veneri, P; Mercaldo, L V; Usatii, I; Buatier de Mongeot, F

    2013-06-07

    Nanostructured glass substrates endowed with high aspect ratio one-dimensional corrugations are prepared by defocused ion beam erosion through a self-organized gold (Au) stencil mask. The shielding action of the stencil mask is amplified by co-deposition of gold atoms during ion bombardment. The resulting glass nanostructures enable broadband anti-reflection functionality and at the same time ensure a high efficiency for diffuse light scattering (Haze). It is demonstrated that the patterned glass substrates exhibit a better photon harvesting than the flat glass substrate in p-i-n type thin film a-Si:H solar cells.

  7. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  8. Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

    Science.gov (United States)

    Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

    2018-01-01

    The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

  9. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  10. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  11. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    International Nuclear Information System (INIS)

    Reyes, R; Cremona, M; Achete, C A

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq 3 ) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq 3 /Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  12. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  13. GDP Spatialization and Economic Differences in South China Based on NPP-VIIRS Nighttime Light Imagery

    Science.gov (United States)

    Zhao, M.

    2017-12-01

    Accurate data on gross domestic product (GDP) at pixel level are needed to understand the dynamics of regional economies. GDP spatialization is the basis of quantitative analysis on economic diversities of different administrative divisions and areas with different natural or humanistic attributes. Data from the Visible Infrared Imaging Radiometer Suite (VIIRS), carried by the Suomi National Polar-orbiting Partnership (NPP) satellite, are capable of estimating GDP, but few studies have been conducted for mapping GDP at pixel level and further pattern analysis of economic differences in different regions using the VIIRS data. This paper produced a pixel-level (500 m × 500 m) GDP map for South China in 2014 and quantitatively analyzed economic differences among diverse geomorphological types. Based on a regression analysis, the total nighttime light (TNL) of corrected VIIRS data were found to exhibit R2 values of 0.8935 and 0.9243 for prefecture GDP and county GDP, respectively. This demonstrated that TNL showed a more significant capability in reflecting economic status (R2 > 0.88) than other nighttime light indices (R2 simple linear correlations at both prefecture and county levels. The corrected NPP-VIIRS data showed a better fit than the original data, and the estimation at the county level was better than at the prefecture level. The pixel-level GDP map indicated that: (a) economic development in coastal areas was higher than that in inland areas; (b) low altitude plains were the most developed areas, followed by low altitude platforms and low altitude hills; and (c) economic development in middle altitude areas, and low altitude hills and mountains remained to be strengthened.

  14. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  15. Study the effects of varying interference upon the optical properties of turbid samples using NIR spatial light modulation

    Science.gov (United States)

    Shaul, Oren; Fanrazi-Kahana, Michal; Meitav, Omri; Pinhasi, Gad A.; Abookasis, David

    2018-03-01

    Optical properties of biological tissues are valuable diagnostic parameters which can provide necessary information regarding tissue state during disease pathogenesis and therapy. However, different sources of interference, such as temperature changes may modify these properties, introducing confounding factors and artifacts to data, consequently skewing their interpretation and misinforming clinical decision-making. In the current study, we apply spatial light modulation, a type of diffuse reflectance hyperspectral imaging technique, to monitor the variation in optical properties of highly scattering turbid media in the presence varying levels of the following sources of interference: scattering concentration, temperature, and pressure. Spatial near-infrared (NIR) light modulation is a wide-field, non-contact emerging optical imaging platform capable of separating the effects of tissue scattering from those of absorption, thereby accurately estimating both parameters. With this technique, periodic NIR illumination patterns at alternately low and high spatial frequencies, at six discrete wavelengths between 690 to 970 nm, were sequentially projected upon the medium while a CCD camera collects the diffusely reflected light. Data analysis based assumptions is then performed off-line to recover the medium's optical properties. We conducted a series of experiments demonstrating the changes in absorption and reduced scattering coefficients of commercially available fresh milk and chicken breast tissue under different interference conditions. In addition, information on the refractive index was study under increased pressure. This work demonstrates the utility of NIR spatial light modulation to detect varying sources of interference upon the optical properties of biological samples.

  16. Utilization of a liquid crystal spatial light modulator in a gray scale detour phase method for Fourier holograms.

    Science.gov (United States)

    Makey, Ghaith; El-Daher, Moustafa Sayem; Al-Shufi, Kanj

    2012-11-10

    This paper introduces a new modification for the well-known binary detour phase method, which is largely used to represent Fourier holograms; the modification utilizes gray scale level control provided by a liquid crystal spatial light modulator to improve the traditional binary detour phase. Results are shown by both simulation and experiment.

  17. Spatial light modulator array with heat minimization and image enhancement features

    Science.gov (United States)

    Jain, Kanti [Briarcliff Manor, NY; Sweatt, William C [Albuquerque, NM; Zemel, Marc [New Rochelle, NY

    2007-01-30

    An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

  18. Non-Contact Surface Roughness Measurement by Implementation of a Spatial Light Modulator

    Directory of Open Access Journals (Sweden)

    Laura Aulbach

    2017-03-01

    Full Text Available The surface structure, especially the roughness, has a significant influence on numerous parameters, such as friction and wear, and therefore estimates the quality of technical systems. In the last decades, a broad variety of surface roughness measurement methods were developed. A destructive measurement procedure or the lack of feasibility of online monitoring are the crucial drawbacks of most of these methods. This article proposes a new non-contact method for measuring the surface roughness that is straightforward to implement and easy to extend to online monitoring processes. The key element is a liquid-crystal-based spatial light modulator, integrated in an interferometric setup. By varying the imprinted phase of the modulator, a correlation between the imprinted phase and the fringe visibility of an interferogram is measured, and the surface roughness can be derived. This paper presents the theoretical approach of the method and first simulation and experimental results for a set of surface roughnesses. The experimental results are compared with values obtained by an atomic force microscope and a stylus profiler.

  19. Holographic Fabrication of Designed Functional Defect Lines in Photonic Crystal Lattice Using a Spatial Light Modulator

    Directory of Open Access Journals (Sweden)

    Jeffrey Lutkenhaus

    2016-04-01

    Full Text Available We report the holographic fabrication of designed defect lines in photonic crystal lattices through phase engineering using a spatial light modulator (SLM. The diffracted beams from the SLM not only carry the defect’s content but also the defect related phase-shifting information. The phase-shifting induced lattice shifting in photonic lattices around the defects in three-beam interference is less than the one produced by five-beam interference due to the alternating shifting in lattice in three beam interference. By designing the defect line at a 45 degree orientation and using three-beam interference, the defect orientation can be aligned with the background photonic lattice, and the shifting is only in one side of the defect line, in agreement with the theory. Finally, a new design for the integration of functional defect lines in a background phase pattern reduces the relative phase shift of the defect and utilizes the different diffraction efficiency between the defect line and background phase pattern. We demonstrate that the desired and functional defect lattice can be registered into the background lattice through the direct imaging of designed phase patterns.

  20. PHASE QUANTIZATION STUDY OF SPATIAL LIGHT MODULATOR FOR EXTREME HIGH-CONTRAST IMAGING

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Jiangpei; Ren, Deqing, E-mail: jpdou@niaot.ac.cn, E-mail: jiangpeidou@gmail.com [Physics and Astronomy Department, California State University Northridge, 18111 Nordhoff Street, Northridge, CA 91330 (United States)

    2016-11-20

    Direct imaging of exoplanets by reflected starlight is extremely challenging due to the large luminosity ratio to the primary star. Wave-front control is a critical technique to attenuate the speckle noise in order to achieve an extremely high contrast. We present a phase quantization study of a spatial light modulator (SLM) for wave-front control to meet the contrast requirement of detection of a terrestrial planet in the habitable zone of a solar-type star. We perform the numerical simulation by employing the SLM with different phase accuracy and actuator numbers, which are related to the achievable contrast. We use an optimization algorithm to solve the quantization problems that is matched to the controllable phase step of the SLM. Two optical configurations are discussed with the SLM located before and after the coronagraph focal plane mask. The simulation result has constrained the specification for SLM phase accuracy in the above two optical configurations, which gives us a phase accuracy of 0.4/1000 and 1/1000 waves to achieve a contrast of 10{sup -10}. Finally, we have demonstrated that an SLM with more actuators can deliver a competitive contrast performance on the order of 10{sup -10} in comparison to that by using a deformable mirror.

  1. Adaptive electron beam shaping using a photoemission gun and spatial light modulator

    Directory of Open Access Journals (Sweden)

    Jared Maxson

    2015-02-01

    Full Text Available The need for precisely defined beam shapes in photoelectron sources has been well established. In this paper, we use a spatial light modulator and simple shaping algorithm to create arbitrary, detailed transverse laser shapes with high fidelity. We transmit this shaped laser to the photocathode of a high voltage dc gun. Using beam currents where space charge is negligible, and using an imaging solenoid and fluorescent viewscreen, we show that the resultant beam shape preserves these detailed features with similar fidelity. Next, instead of transmitting a shaped laser profile, we use an active feedback on the unshaped electron beam image to create equally accurate and detailed shapes. We demonstrate that this electron beam feedback has the added advantage of correcting for electron optical aberrations, yielding shapes without skew. The method may serve to provide precisely defined electron beams for low current target experiments, space-charge dominated beam commissioning, as well as for online adaptive correction of photocathode quantum efficiency degradation.

  2. Dynamic wavefront sensing and correction with low-cost twisted nematic spatial light modulators

    International Nuclear Information System (INIS)

    Duran, Vicente; Climent, Vicent; Lancis, Jesus; Tajahuerce, Enrique; Bara, Salvador; Arines, Justo; Ares, Jorge; Andres, Pedro; Jaroszewicz, Zbigniew

    2010-01-01

    Off-the-shelf twisted nematic liquid crystal displays (TNLCDs) show some interesting features such as high spatial resolution, easy handling, wide availability, and low cost. We describe a compact adaptive optical system using just one TNLCD to measure and compensate optical aberrations. The current system operates at a frame rate of the order of 10 Hz with a four level codification scheme. Wavefront estimation is performed through conventional Hartmann-Shack sensing architecture. The system has proved to work properly with a maximum rms aberration of 0.76 microns and wavefront gradient of 50 rad/mm at a wavelength of 514 nm. These values correspond to typical aberrations found in human eyes. The key of our approach is careful characterization and optimization of the TNLCD for phase-only modulation. For this purpose, we exploit the so-called retarder-rotator approach for twisted nematic liquid crystal cells. The optimization process has been successfully applied to SLMs working either in transmissive or in reflective mode, even when light depolarization effects are observed.

  3. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  4. The Suitability of Different Nighttime Light Data for GDP Estimation at Different Spatial Scales and Regional Levels

    Directory of Open Access Journals (Sweden)

    Zhaoxin Dai

    2017-02-01

    Full Text Available Nighttime light data offer a unique view of the Earth’s surface and can be used to estimate the spatial distribution of gross domestic product (GDP. Historically, using a simple regression function, the Defense Meteorological Satellite Program’s Operational Linescan System (DMSP/OLS has been used to correlate regional and global GDP values. In early 2013, the first global Suomi National Polar-orbiting Partnership (NPP visible infrared imaging radiometer suite (VIIRS nighttime light data were released. Compared with DMSP/OLS, they have a higher spatial resolution and a wider radiometric detection range. This paper aims to study the suitability of the two nighttime light data sources for estimating the GDP relationship between the provincial and city levels in Mainland China, as well as of different regression functions. First, NPP/VIIRS nighttime light data for 2014 are corrected with DMSP/OLS data for 2013 to reduce the background noise in the original data. Subsequently, three regression functions are used to estimate the relationship between nighttime light data and GDP statistical data at the provincial and city levels in Mainland China. Then, through the comparison of the relative residual error (RE and the relative root mean square error (RRMSE parameters, a systematical assessment of the suitability of the GDP estimation is provided. The results show that the NPP/VIIRS nighttime light data are better than the DMSP/OLS data for GDP estimation, whether at the provincial or city level, and that the power function and polynomial models are better for GDP estimation than the linear regression model. This study reveals that the accuracy of GDP estimation based on nighttime light data is affected by the resolution of the data and the spatial scale of the study area, as well as by the land cover types and industrial structures of the study area.

  5. Influence of the distance between target surface and focal point on the expansion dynamics of a laser-induced silicon plasma with spatial confinement

    Science.gov (United States)

    Zhang, Dan; Chen, Anmin; Wang, Xiaowei; Wang, Ying; Sui, Laizhi; Ke, Da; Li, Suyu; Jiang, Yuanfei; Jin, Mingxing

    2018-05-01

    Expansion dynamics of a laser-induced plasma plume, with spatial confinement, for various distances between the target surface and focal point were studied by the fast photography technique. A silicon wafer was ablated to induce the plasma with a Nd:YAG laser in an atmospheric environment. The expansion dynamics of the plasma plume depended on the distance between the target surface and focal point. In addition, spatially confined time-resolved images showed the different structures of the plasma plumes at different distances between the target surface and focal point. By analyzing the plume images, the optimal distance for emission enhancement was found to be approximately 6 mm away from the geometrical focus using a 10 cm focal length lens. This optimized distance resulted in the strongest compression ratio of the plasma plume by the reflected shock wave. Furthermore, the duration of the interaction between the reflected shock wave and the plasma plume was also prolonged.

  6. A depth-encoding PET detector that uses light sharing and single-ended readout with silicon photomultipliers

    Science.gov (United States)

    Kuang, Zhonghua; Yang, Qian; Wang, Xiaohui; Fu, Xin; Ren, Ning; Sang, Ziru; Wu, San; Zheng, Yunfei; Zhang, Xianming; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

    2018-02-01

    Detectors with depth-encoding capability and good timing resolution are required to develop high-performance whole-body or total-body PET scanners. In this work, depth-encoding PET detectors that use light sharing between two discrete crystals and single-ended readout with silicon photomultipliers (SiPMs) were manufactured and evaluated. The detectors consisted of two unpolished 3  ×  3  ×  20 mm3 LYSO crystals with different coupling materials between them and were read out by Hamamatsu 3  ×  3 mm2 SiPMs with one-to-one coupling. The ratio of the energy of one SiPM to the total energy of two SiPMs was used to measure the depth of interaction (DOI). Detectors with different coupling materials in-between the crystals were measured in the singles mode in an effort to obtain detectors that can provide good DOI resolution. The DOI resolution and energy resolution of three types of detector were measured and the timing resolution was measured for the detector with the best DOI and energy resolution. The optimum detector, with 5 mm optical glue, a 9 mm triangular ESR and a 6 mm rectangular ESR in-between the unpolished crystals, provides a DOI resolution of 2.65 mm, an energy resolution of 10.0% and a timing resolution of 427 ps for events of E  >  400 keV. The detectors simultaneously provide good DOI and timing resolution, and show great promise for the development of high-performance whole-body and total-body PET scanners.

  7. Tilt-effect of holograms and images displayed on a spatial light modulator.

    Science.gov (United States)

    Harm, Walter; Roider, Clemens; Bernet, Stefan; Ritsch-Marte, Monika

    2015-11-16

    We show that a liquid crystal spatial light modulator (LCOS-SLM) can be used to display amplitude images, or phase holograms, which change in a pre-determined way when the display is tilted, i.e. observed under different angles. This is similar to the tilt-effect (also called "latent image effect") known from various security elements ("kinegrams") on credit cards or bank notes. The effect is achieved without any specialized optical components, simply by using the large phase shifting capability of a "thick" SLM, which extends over several multiples of 2π, in combination with the angular dependence of the phase shift. For hologram projection one can use the fact that the phase of a monochromatic wave is only defined modulo 2π. Thus one can design a phase pattern extending over several multiples of 2π, which transforms at different readout angles into different 2π-wrapped phase structures, due to the angular dependence of the modulo 2π operation. These different beams then project different holograms at the respective readout angles. In amplitude modulation mode (with inserted polarizer) the intensity of each SLM pixel oscillates over several periods when tuning its control voltage. Since the oscillation period depends on the readout angle, it is possible to find a certain control voltage which produces two (or more) selectable gray levels at a corresponding number of pre-determined readout angles. This is done with all SLM pixels individually, thus constructing different images for the selected angles. We experimentally demonstrate the reconstruction of multiple (Fourier- and Fresnel-) holograms, and of different amplitude images, by readout of static diffractive patterns in a variable angular range between 0° and 60°.

  8. Correcting the wavefront aberration of membrane mirror based on liquid crystal spatial light modulator

    Science.gov (United States)

    Yang, Bin; Wei, Yin; Chen, Xinhua; Tang, Minxue

    2014-11-01

    Membrane mirror with flexible polymer film substrate is a new-concept ultra lightweight mirror for space applications. Compared with traditional mirrors, membrane mirror has the advantages of lightweight, folding and deployable, low cost and etc. Due to the surface shape of flexible membrane mirror is easy to deviate from the design surface shape, it will bring wavefront aberration to the optical system. In order to solve this problem, a method of membrane mirror wavefront aberration correction based on the liquid crystal spatial light modulator (LCSLM) will be studied in this paper. The wavefront aberration correction principle of LCSLM is described and the phase modulation property of a LCSLM is measured and analyzed firstly. Then the membrane mirror wavefront aberration correction system is designed and established according to the optical properties of a membrane mirror. The LCSLM and a Hartmann-Shack sensor are used as a wavefront corrector and a wavefront detector, respectively. The detected wavefront aberration is calculated and converted into voltage value on LCSLM for the mirror wavefront aberration correction by programming in Matlab. When in experiment, the wavefront aberration of a glass plane mirror with a diameter of 70 mm is measured and corrected for verifying the feasibility of the experiment system and the correctness of the program. The PV value and RMS value of distorted wavefront are reduced and near diffraction limited optical performance is achieved. On this basis, the wavefront aberration of the aperture center Φ25 mm in a membrane mirror with a diameter of 200 mm is corrected and the errors are analyzed. It provides a means of correcting the wavefront aberration of membrane mirror.

  9. Free-space data transfer using the spatial modes of light

    CSIR Research Space (South Africa)

    Gailele, Lucas M

    2016-07-01

    Full Text Available The orbital angular momentum (OAM) of light has become the focus of intensive research. Traditional optical communication systems optimize multiplexing in the polarization and the wavelength of light to attain an increase in bandwith. However we...

  10. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    OpenAIRE

    Aceves-Mijares, M.; González-Fernández, A. A.; López-Estopier, R.; Luna-López, A.; Berman-Mendoza, D.; Morales, A.; Falcony, C.; Domínguez, C.; Murphy-Arteaga, R.

    2012-01-01

    Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept th...

  11. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  12. Lighting.

    Energy Technology Data Exchange (ETDEWEB)

    United States. Bonneville Power Administration.

    1992-09-01

    Since lighting accounts for about one-third of the energy used in commercial buildings, there is opportunity to conserve. There are two ways to reduce lighting energy use: modify lighting systems so that they used less electricity and/or reduce the number of hours the lights are used. This booklet presents a number of ways to do both. Topics covered include: reassessing lighting levels, reducing lighting levels, increasing bulb & fixture efficiency, using controls to regulate lighting, and taking advantage of daylight.

  13. Study on spatial-temporal change of Changsha-Zhuzhou-Xiangtan urban agglomeration based on DMSP / OLS night light data

    Science.gov (United States)

    Li, Mao; Li, Lel-in

    2018-03-01

    For the sake of curbing the spreading of Changsha-Zhuzhou-Xiangtan urban agglomeration and spatial disorder in the process of urbanization development on the regional bearing capacity of land resources and ecological environment and assisting to plan the integration process of ChangZhuTan,this paper uses the DMSP/OLS night light data of Chang ZhuTan in 1992 to 2013 to invert the urbanization process index of ChangZhuTan urban agglomeration. Based on the two scales of time and space, this paper analyzes the average index of lights, the speed of urban expansion and urban compactness index et al and studies the temporal and spatial characteristics of ChangZhuTan urban agglomeration in this period.

  14. Spatial and spectral image distortions caused by diffraction of an ordinary polarised light beam by an ultrasonic wave

    Energy Technology Data Exchange (ETDEWEB)

    Machikhin, A S; Pozhar, V E [Scientific and Technological Centre of Unique Instrumentation, Russian Academy of Sciences, Moscow (Russian Federation)

    2015-02-28

    We consider the problem of determining the spatial and spectral image distortions arising from anisotropic diffraction by ultrasonic waves in crystals with ordinary polarised light (o → e). By neglecting the small-birefringence approximation, we obtain analytical solutions that describe the dependence of the diffraction angles and wave mismatch on the acousto-optic (AO) interaction geometry and crystal parameters. The formulas derived allow one to calculate and analyse the magnitude of diffraction-induced spatial and spectral image distortions and to identify the main types of distortions: chromatic compression and trapezoidal deformation. A comparison of the values of these distortions in the diffraction of ordinary and extraordinary polarised light shows that they are almost equal in magnitude and opposite in signs, so that consistent diffraction (o → e → o or e → o → e) in two identical AO cells rotated through 180° in the plane of diffraction can compensate for these distortions. (diffraction of radiation)

  15. Hot electron spatial distribution under presence of laser light self-focusing in over-dense plasmas

    International Nuclear Information System (INIS)

    Tanimoto, T; Yabuuchi, T; Habara, H; Kondo, K; Kodama, R; Mima, K; Tanaka, K A; Lei, A L

    2008-01-01

    In fast ignition for laser thermonuclear fusion, an ultra intense laser (UIL) pulse irradiates an imploded plasma in order to fast-heat a high-density core with hot electrons generated in laser-plasma interactions. An UIL pulse needs to make plasma channel via laser self-focusing and to propagate through the corona plasma to reach close enough to the core. Hot electrons are used for heating the core. Therefore the propagation of laser light in the high-density plasma region and spatial distribution of hot electron are important in issues in order to study the feasibility of this scheme. We measure the spatial distribution of hot electron when the laser light propagates into the high-density plasma region by self-focusing

  16. Delineating Spatial Patterns in Human Settlements Using VIIRS Nighttime Light Data: A Watershed-Based Partition Approach

    Directory of Open Access Journals (Sweden)

    Ting Ma

    2018-03-01

    Full Text Available As an informative proxy measure for a range of urbanization and socioeconomic variables, satellite-derived nighttime light data have been widely used to investigate diverse anthropogenic activities in human settlements over time and space from the regional to the national scale. With a higher spatial resolution and fewer over-glow and saturation effects, nighttime light data derived from the Visible Infrared Imaging Radiometer Suite (VIIRS instrument with day/night band (DNB, which is on the Suomi National Polar-Orbiting Partnership satellite (Suomi-NPP, may further improve our understanding of spatiotemporal dynamics and socioeconomic activities, particularly at the local scale. Capturing and identifying spatial patterns in human settlements from VIIRS images, however, is still challenging due to the lack of spatially explicit texture characteristics, which are usually crucial for general image classification methods. In this study, we propose a watershed-based partition approach by combining a second order exponential decay model for the spatial delineation of human settlements with VIIRS-derived nighttime light images. Our method spatially partitions the human settlement into five different types of sub-regions: high, medium-high, medium, medium-low and low lighting areas with different degrees of human activity. This is primarily based on the local coverage of locally maximum radiance signals (watershed-based and the rank and magnitude of the nocturnal radiance signal across the whole region, as well as remotely sensed building density data and social media-derived human activity information. The comparison results for the relationship between sub-regions with various density nighttime brightness levels and human activities, as well as the densities of different types of interest points (POIs, show that our method can distinctly identify various degrees of human activity based on artificial nighttime radiance and ancillary data. Furthermore

  17. Parity generator and parity checker in the modified trinary number system using savart plate and spatial light modulator

    Science.gov (United States)

    Ghosh, Amal K.

    2010-09-01

    The parity generators and the checkers are the most important circuits in communication systems. With the development of multi-valued logic (MVL), the proposed system with parity generators and checkers is the most required using the recently developed optoelectronic technology in the modified trinary number (MTN) system. This system also meets up the tremendous needs of speeds by exploiting the savart plates and spatial light modulators (SLM) in the optical tree architecture (OTA).

  18. Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

    International Nuclear Information System (INIS)

    Gemini, Laura; Hashida, Masaki; Shimizu, Masahiro; Miyasaka, Yasuhiro; Inoue, Shunsuke; Tokita, Shigeki; Sakabe, Shuji; Limpouch, Jiri; Mocek, Tomas

    2013-01-01

    Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material

  19. An environmental index of noise and light pollution at EU by spatial correlation of quiet and unlit areas.

    Science.gov (United States)

    Votsi, Nefta-Eleftheria P; Kallimanis, Athanasios S; Pantis, Ioannis D

    2017-02-01

    Quietness exists in places without human induced noise sources and could offer multiple benefits to citizens. Unlit areas are sites free of human intense interference at night time. The aim of this research is to develop an integrated environmental index of noise and light pollution. In order to achieve this goal the spatial pattern of quietness and darkness of Europe was identified, as well as their overlap. The environmental index revealed that the spatial patterns of Quiet and Unlit Areas differ to a great extent highlighting the importance of preserving quietness as well as darkness in EU. The spatial overlap of these two environmental characteristics covers 32.06% of EU surface area, which could be considered a feasible threshold for protection. This diurnal and nocturnal metric of environmental quality accompanied with all direct and indirect benefits to human well-being could indicate a target for environmental protection in the EU policy and practices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Lighting

    Data.gov (United States)

    Federal Laboratory Consortium — Lighting Systems Test Facilities aid research that improves the energy efficiency of lighting systems. • Gonio-Photometer: Measures illuminance from each portion of...

  1. Replacement of a photomultiplier tube in a 2-inch thallium-doped sodium iodide gamma spectrometer with silicon photomultipliers and a light guide

    Directory of Open Access Journals (Sweden)

    Chankyu Kim

    2015-06-01

    Full Text Available The thallium-doped sodium iodide [NaI(Tl] scintillation detector is preferred as a gamma spectrometer in many fields because of its general advantages. A silicon photomultiplier (SiPM has recently been developed and its application area has been expanded as an alternative to photomultiplier tubes (PMTs. It has merits such as a low operating voltage, compact size, cheap production cost, and magnetic resonance compatibility. In this study, an array of SiPMs is used to develop an NaI(Tl gamma spectrometer. To maintain detection efficiency, a commercial NaI(Tl 2′ × 2′ scintillator is used, and a light guide is used for the transport and collection of generated photons from the scintillator to the SiPMs without loss. The test light guides were fabricated with polymethyl methacrylate and reflective materials. The gamma spectrometer systems were set up and included light guides. Through a series of measurements, the characteristics of the light guides and the proposed gamma spectrometer were evaluated. Simulation of the light collection was accomplished using the DETECT 97 code (A. Levin, E. Hoskinson, and C. Moison, University of Michigan, USA to analyze the measurement results. The system, which included SiPMs and the light guide, achieved 14.11% full width at half maximum energy resolution at 662 keV.

  2. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  3. Light pollution: spatial analysis and potential ecological effects in rural Ireland

    OpenAIRE

    ESPEY, BRIAN

    2017-01-01

    PUBLISHED This paper examines the implications of light pollution for the region of the Mayo Dark Sky Park in the Wild Nephin/Ballycroy area using a combination of satellite and in-situ light pollution measurements and studies of resident species sensitivity.

  4. Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

    2015-12-01

    In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

  5. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido; Printemps, Tony; Licitra, Christophe; Sogne, Elisa; D’ Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele; Ricci, Pier Carlo; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea

    2017-01-01

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  6. Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

    KAUST Repository

    Mula, Guido

    2017-07-14

    Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn\\'t be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.

  7. Light

    DEFF Research Database (Denmark)

    Prescott, N.B.; Kristensen, Helle Halkjær; Wathes, C.M.

    2004-01-01

    This chapter presents the effect of artificial light environments (light levels, colour, photoperiod and flicker) on the welfare of broilers in terms of vision, behaviour, lameness and mortality......This chapter presents the effect of artificial light environments (light levels, colour, photoperiod and flicker) on the welfare of broilers in terms of vision, behaviour, lameness and mortality...

  8. Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

    International Nuclear Information System (INIS)

    Das, Sonali; Kundu, Avra; Saha, Hiranmay; Datta, Swapan K

    2016-01-01

    Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (∼10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (∼3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon–electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good

  9. On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Zinine, A.; Bankras, R.G.; Wormeester, Herbert; Poelsema, Bene; Schmitz, Jurriaan

    2006-01-01

    After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable

  10. Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng; Hu, Liangbing; Choi, Jang Wook; Cui, Yi

    2010-01-01

    and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon

  11. Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

    KAUST Repository

    Cui, Li-Feng

    2010-07-27

    Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both mechanical support and electrical conductor and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon films with similar thicknesses. Scanning electron micrographs show that Si is still connected by the CNT network even when small breaking or cracks appear in the film after cycling. The film can also "ripple up" to release the strain of a large volume change during lithium intercalation. The conductive composite film can function as both anode active material and current collector. It offers ∼10 times improvement in specific capacity compared with widely used graphite/copper anode sheets. © 2010 American Chemical Society.

  12. Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

    Directory of Open Access Journals (Sweden)

    Daoxin Dai

    2012-03-01

    Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

  13. Measurement of Spatial Coherence of Light Propagating in a Turbulent Atmosphere

    Directory of Open Access Journals (Sweden)

    P. Barcik

    2013-04-01

    Full Text Available A lot of issues have to be taken into account when designing a reliable free space optical communication link. Among these are e.g.,beam wander, fluctuation of optical intensity and loss of spatial coherence that are caused by atmospheric turbulence. This paper presents experimental measurements of spatial coherence of a laser beam. The experimental setup is based on Young's double pinhole experiment. Fringe patterns under atmospheric turbulence for four different pinhole separations are presented. From these fringe patterns, visibility is determined and the coherence radius is estimated.

  14. Self-compression of spatially limited laser pulses in a system of coupled light-guides

    Science.gov (United States)

    Balakin, A. A.; Litvak, A. G.; Mironov, V. A.; Skobelev, S. A.

    2018-04-01

    The self-action features of wave packets propagating in a 2D system of equidistantly arranged fibers are studied analytically and numerically on the basis of the discrete nonlinear Schrödinger equation. Self-consistent equations for the characteristic scales of a Gaussian wave packet are derived on the basis of the variational approach, which are proved numerically for powers P beams become filamented, and their amplitude is limited due to the nonlinear breaking of the interaction between neighboring light-guides. This makes it impossible to collect a powerful wave beam in a single light-guide. Variational analysis shows the possibility of the adiabatic self-compression of soliton-like laser pulses in the process of 3D self-focusing on the central light-guide. However, further increase of the field amplitude during self-compression leads to the development of longitudinal modulation instability and the formation of a set of light bullets in the central fiber. In the regime of hollow wave beams, filamentation instability becomes predominant. As a result, it becomes possible to form a set of light bullets in optical fibers located on the ring.

  15. Determination of the complex refractive index segments of turbid sample with multispectral spatially modulated structured light and models approximation

    Science.gov (United States)

    Meitav, Omri; Shaul, Oren; Abookasis, David

    2017-09-01

    Spectral data enabling the derivation of a biological tissue sample's complex refractive index (CRI) can provide a range of valuable information in the clinical and research contexts. Specifically, changes in the CRI reflect alterations in tissue morphology and chemical composition, enabling its use as an optical marker during diagnosis and treatment. In the present work, we report a method for estimating the real and imaginary parts of the CRI of a biological sample using Kramers-Kronig (KK) relations in the spatial frequency domain. In this method, phase-shifted sinusoidal patterns at single high spatial frequency are serially projected onto the sample surface at different near-infrared wavelengths while a camera mounted normal to the sample surface acquires the reflected diffuse light. In the offline analysis pipeline, recorded images at each wavelength are converted to spatial phase maps using KK analysis and are then calibrated against phase-models derived from diffusion approximation. The amplitude of the reflected light, together with phase data, is then introduced into Fresnel equations to resolve both real and imaginary segments of the CRI at each wavelength. The technique was validated in tissue-mimicking phantoms with known optical parameters and in mouse models of ischemic injury and heat stress. Experimental data obtained indicate variations in the CRI among brain tissue suffering from injury. CRI fluctuations correlated with alterations in the scattering and absorption coefficients of the injured tissue are demonstrated. This technique for deriving dynamic changes in the CRI of tissue may be further developed as a clinical diagnostic tool and for biomedical research applications. To the best of our knowledge, this is the first report of the estimation of the spectral CRI of a mouse head following injury obtained in the spatial frequency domain.

  16. Change in spatial coherence of light on refraction and on reflection.

    Science.gov (United States)

    Lahiri, Mayukh; Wolf, Emil

    2013-06-01

    A theory of refraction and reflection of partially coherent electromagnetic beams has been recently developed. In this paper, we apply it to study the change in spatial coherence caused by refraction and by reflection more fully. By considering a Gaussian Schell-model beam, we show that the change is, in general, dependent on the angle of incidence.

  17. Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

    Science.gov (United States)

    Efron, Uzi (Editor)

    1990-01-01

    Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

  18. Trinary flip-flops using Savart plate and spatial light modulator for optical computation in multivalued logic

    Science.gov (United States)

    Ghosh, Amal K.; Basuray, Amitabha

    2008-11-01

    The memory devices in multi-valued logic are of most significance in modern research. This paper deals with the implementation of basic memory devices in multi-valued logic using Savart plate and spatial light modulator (SLM) based optoelectronic circuits. Photons are used here as the carrier to speed up the operations. Optical tree architecture (OTA) has been also utilized in the optical interconnection network. We have exploited the advantages of Savart plates, SLMs and OTA and proposed the SLM based high speed JK, D-type and T-type flip-flops in a trinary system.

  19. Cross-calibrating Spatial Positions of Light-viewing Diagnostics using Plasma Edge Sweeps in DIII-D

    International Nuclear Information System (INIS)

    Solomon, W.M.; Burrell, K.H.; Gohil, P.; Groebner, R.; Kaplan, D.

    2003-01-01

    An experimental technique is presented that permits diagnostics viewing light from the plasma edge to be spatially calibrated relative to one another. By sweeping the plasma edge, each chord of each diagnostic sweeps out a portion of the light emission profile. A nonlinear least-squares fit to such data provides superior cross-calibration of diagnostics located at different toroidal locations compared with simple surveying. Another advantage of the technique is that it can be used to monitor the position of viewing chords during an experimental campaign to ensure that alignment does not change over time. Moreover, should such a change occur, the data can still be cross-calibrated and its usefulness retained

  20. A cortical edge-integration model of object-based lightness computation that explains effects of spatial context and individual differences

    Science.gov (United States)

    Rudd, Michael E.

    2014-01-01

    Previous work has demonstrated that perceived surface reflectance (lightness) can be modeled in simple contexts in a quantitatively exact way by assuming that the visual system first extracts information about local, directed steps in log luminance, then spatially integrates these steps along paths through the image to compute lightness (Rudd and Zemach, 2004, 2005, 2007). This method of computing lightness is called edge integration. Recent evidence (Rudd, 2013) suggests that human vision employs a default strategy to integrate luminance steps only along paths from a common background region to the targets whose lightness is computed. This implies a role for gestalt grouping in edge-based lightness computation. Rudd (2010) further showed the perceptual weights applied to edges in lightness computation can be influenced by the observer's interpretation of luminance steps as resulting from either spatial variation in surface reflectance or illumination. This implies a role for top-down factors in any edge-based model of lightness (Rudd and Zemach, 2005). Here, I show how the separate influences of grouping and attention on lightness can be modeled in tandem by a cortical mechanism that first employs top-down signals to spatially select regions of interest for lightness computation. An object-based network computation, involving neurons that code for border-ownership, then automatically sets the neural gains applied to edge signals surviving the earlier spatial selection stage. Only the borders that survive both processing stages are spatially integrated to compute lightness. The model assumptions are consistent with those of the cortical lightness model presented earlier by Rudd (2010, 2013), and with neurophysiological data indicating extraction of local edge information in V1, network computations to establish figure-ground relations and border ownership in V2, and edge integration to encode lightness and darkness signals in V4. PMID:25202253

  1. A Cortical Edge-integration Model of Object-Based Lightness Computation that Explains Effects of Spatial Context and Individual Differences

    Directory of Open Access Journals (Sweden)

    Michael E Rudd

    2014-08-01

    Full Text Available Previous work demonstrated that perceived surface reflectance (lightness can be modeled in simple contexts in a quantitatively exact way by assuming that the visual system first extracts information about local, directed steps in log luminance, then spatial integrates these steps along paths through the image to compute lightness (Rudd & Zemach, 2004, 2005, 2007. This method of computing lightness is called edge integration. Recent evidence (Rudd, 2013 suggests that the human vision employs a default strategy to integrate luminance steps only along paths from a common background region to the targets whose lightness is computed. This implies a role for gestalt grouping in edge-based lightness computation. Rudd (2010 further showed the perceptual weights applied to edges in lightness computation can be influenced by the observer’s interpretation of luminance steps as resulting from either spatial variation in surface reflectance or illumination. This implies a role for top-down factors in any edge-based model of lightness (Rudd & Zemach, 2005. Here, I show how the separate influences of grouping and attention on lightness can be together modeled by a cortical mechanism that first employs top-down signals to spatially select regions of interest for lightness computation. An object-based network computation, involving neurons that code for border-ownership, then automatically sets the neural gains applied to edge signals surviving the earlier spatial selection stage. Only the borders that survive both processing stages are spatially integrated to compute lightness. The model assumptions are consistent with those of the cortical lightness model presented earlier by Rudd (2010, 2013, and with neurophysiological data indicating extraction of local edge information in V1, network computations to establish figure-ground relations and border ownership in V2, and edge integration to encode lightness and darkness signals in V4.

  2. A cortical edge-integration model of object-based lightness computation that explains effects of spatial context and individual differences.

    Science.gov (United States)

    Rudd, Michael E

    2014-01-01

    Previous work has demonstrated that perceived surface reflectance (lightness) can be modeled in simple contexts in a quantitatively exact way by assuming that the visual system first extracts information about local, directed steps in log luminance, then spatially integrates these steps along paths through the image to compute lightness (Rudd and Zemach, 2004, 2005, 2007). This method of computing lightness is called edge integration. Recent evidence (Rudd, 2013) suggests that human vision employs a default strategy to integrate luminance steps only along paths from a common background region to the targets whose lightness is computed. This implies a role for gestalt grouping in edge-based lightness computation. Rudd (2010) further showed the perceptual weights applied to edges in lightness computation can be influenced by the observer's interpretation of luminance steps as resulting from either spatial variation in surface reflectance or illumination. This implies a role for top-down factors in any edge-based model of lightness (Rudd and Zemach, 2005). Here, I show how the separate influences of grouping and attention on lightness can be modeled in tandem by a cortical mechanism that first employs top-down signals to spatially select regions of interest for lightness computation. An object-based network computation, involving neurons that code for border-ownership, then automatically sets the neural gains applied to edge signals surviving the earlier spatial selection stage. Only the borders that survive both processing stages are spatially integrated to compute lightness. The model assumptions are consistent with those of the cortical lightness model presented earlier by Rudd (2010, 2013), and with neurophysiological data indicating extraction of local edge information in V1, network computations to establish figure-ground relations and border ownership in V2, and edge integration to encode lightness and darkness signals in V4.

  3. Impact of the spectral and spatial properties of natural light on indoor gas-phase chemistry: Experimental and modeling study.

    Science.gov (United States)

    Blocquet, M; Guo, F; Mendez, M; Ward, M; Coudert, S; Batut, S; Hecquet, C; Blond, N; Fittschen, C; Schoemaecker, C

    2018-05-01

    The characteristics of indoor light (intensity, spectral, spatial distribution) originating from outdoors have been studied using experimental and modeling tools. They are influenced by many parameters such as building location, meteorological conditions, and the type of window. They have a direct impact on indoor air quality through a change in chemical processes by varying the photolysis rates of indoor pollutants. Transmittances of different windows have been measured and exhibit different wavelength cutoffs, thus influencing the potential of different species to be photolysed. The spectral distribution of light entering indoors through the windows was measured under different conditions and was found to be weakly dependent on the time of day for indirect cloudy, direct sunshine, partly cloudy conditions contrary to the light intensity, in agreement with calculations of the transmittance as a function of the zenithal angle and the calculated outdoor spectral distribution. The same conclusion can be drawn concerning the position within the room. The impact of these light characteristics on the indoor chemistry has been studied using the INCA-Indoor model by considering the variation in the photolysis rates of key indoor species. Depending on the conditions, photolysis processes can lead to a significant production of radicals and secondary species. © 2018 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  4. An electro-optic spatial light modulator for thermoelastic generation of programmably focused ultrasound

    Science.gov (United States)

    1984-12-01

    The concept proposed is an electro-optic technique that would make it possible to spatially modulate a high power pulsed laser beam to thermoelastically induce focused ultrasound in a test material. Being a purely electro-optic device, the modulator, and therefore the depth at which the acoustic focus occurs, can be programmed electronically at electronic speeds. If successful, it would become possible to scan ultrasound continuously in three dimensions within the component or structure under test.

  5. Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

    KAUST Repository

    Tsai, Meng-Lin

    2017-04-21

    Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated at room temperature; therefore, these devices require additional cooling systems to detect weak or dim light. Conventional solar cells also face the challenge of poor light-harvesting capabilities in hazy or cloudy weather. The real world features such varying levels of light, which makes it important to develop strategies that allow optical devices to function when conditions are less than optimal. In this work, we report an organic/inorganic hybrid device that consists of graphene quantum dot-modified poly(3,4-ethylenedioxythiophene) polystyrenesulfonate spin-coated on Si for the detection/harvest of weak light. The hybrid configuration provides the device with high responsivity and detectability, omnidirectional light trapping, and fast operation speed. To demonstrate the potential of this hybrid device in real world applications, we measured near-infrared light scattered through human tissue to demonstrate noninvasive oximetric photodetection as well as characterized the device\\'s photovoltaic properties in outdoor (i.e., weather-dependent) and indoor weak light conditions. This organic/inorganic device configuration demonstrates a promising strategy for developing future high-performance low-light compatible photodetectors and photovoltaics.

  6. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  7. Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Hruška, Karel; Fait, J.; Kapusta, Peter

    2017-01-01

    Roč. 11, č. 3 (2017), s. 2972-2981 ISSN 1936-0851 R&D Projects: GA ČR GJ16-09692Y; GA MŠk LD15003; GA ČR(CZ) GBP208/12/G016 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : photonic crystal * diamond * silicon vacancy center Subject RIV: BM - Solid Matter Physics ; Magnetism; CF - Physical ; Theoretical Chemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W) Impact factor: 13.942, year: 2016

  8. Spatial Recognition of the Urban-Rural Fringe of Beijing Using DMSP/OLS Nighttime Light Data

    Directory of Open Access Journals (Sweden)

    Yuli Yang

    2017-11-01

    Full Text Available Spatial identification of the urban-rural fringes is very significant for deeply understanding the development processes and regulations of urban space and guiding urban spatial development in the future. Traditionally, urban-rural fringe areas are identified using statistical analysis methods that consider indexes from single or multiple factors, such as population densities, the ratio of building land, the proportion of the non-agricultural population, and economic levels. However, these methods have limitations, for example, the statistical data are not continuous, the statistical standards are not uniform, the data is seldom available in real time, and it is difficult to avoid issues on the statistical effects from edges of administrative regions or express the internal differences of these areas. This paper proposes a convenient approach to identify the urban-rural fringe using nighttime light data of DMSP/OLS images. First, a light characteristics–combined value model was built in ArcGIS 10.3, and the combined characteristics of light intensity and the degree of light intensity fluctuation are analyzed in the urban, urban-rural fringe, and rural areas. Then, the Python programming language was used to extract the breakpoints of the characteristic combination values of the nighttime light data in 360 directions taking Tian An Men as the center. Finally, the range of the urban-rural fringe area is identified. The results show that the urban-rural fringe of Beijing is mainly located in the annular band around Tian An Men. The average inner radius is 19 km, and the outer radius is 26 km. The urban-rural fringe includes the outer portions of the four city center districts, which are the Chaoyang District, Haidian District, Fengtai District, and Shijingshan District and the part area border with Daxing District, Tongzhou District, Changping District, Mentougou District, Shunyi District, and Fangshan District. The area of the urban-rural fringe

  9. Improvement of diffraction efficiency of three-dimensional magneto-optic spatial light modulator with magnetophotonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, K.; Takagi, H., E-mail: takagi@ee.tut.ac.jp; Lim, P. B.; Inoue, M., E-mail: inoue@tut.ac.jp [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441 8580 (Japan); Goto, Taichi [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441 8580 (Japan); JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Horimai, H. [HolyMine Corporation, Atsugi, Kanagawa 243 0813 (Japan); Yoshikawa, H. [Department of Computer Engineering, College of Science and Technology, Nihon University, Funabashi, Chiba 274 8501 (Japan); Bove, V. M. [MIT Media Lab, Cambridge, Massachusetts 02139 (United States)

    2016-01-11

    We have developed three-dimensional magneto-optic spatial light modulators (3D-MOSLMs) that use magnetic domains as submicron scale pixels to represent holograms. Our display system uses a submicron-scale magnetic pixel array on an amorphous TbFe film to create a wide viewing angle hologram. However, in previous work the reconstructed images had a low intensity and a low optical contrast; brightness of the reconstructed image was 4.4 × 10{sup −2 }cd/m{sup 2} with 532 nm illumination light at 10.8 mW/cm{sup 2}, while display standard ISO13406 recommends 100 cd/m{sup 2} or more. In this paper, we describe our development of a 3D-MOSLM composed of an artificial magnetic lattice structure of magnetophotonic crystals (MPCs). The MPCs enhance the diffraction efficiency of reconstructed 3D images and reduce the power consumption for controlling the magnetic pixels by a light localization effect. We demonstrate reconstructed 3D images using the MPC and show significant brightness improvement.

  10. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  11. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  12. Atomic-level spatial distributions of dopants on silicon surfaces: toward a microscopic understanding of surface chemical reactivity

    Science.gov (United States)

    Hamers, Robert J.; Wang, Yajun; Shan, Jun

    1996-11-01

    We have investigated the interaction of phosphine (PH 3) and diborane (B 2H 6) with the Si(001) surface using scanning tunneling microscopy, infrared spectroscopy, and ab initio molecular orbital calculations. Experiment and theory show that the formation of PSi heterodimers is energetically favorable compared with formation of PP dimers. The stability of the heterodimers arises from a large strain energy associated with formation of PP dimers. At moderate P coverages, the formation of PSi heterodimers leaves the surface with few locations where there are two adjacent reactive sites. This in turn modifies the chemical reactivity toward species such as PH 3, which require only one site to adsorb but require two adjacent sites to dissociate. Boron on Si(001) strongly segregates into localized regions of high boron concentration, separated by large regions of clean Si. This leads to a spatially-modulated chemical reactivity which during subsequent growth by chemical vapor deposition (CVD) leads to formation of a rough surface. The implications of the atomic-level spatial distribution of dopants on the rates and mechanisms of CVD growth processes are discussed.

  13. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  14. Silicon isotope separation utilizing infrared multiphoton dissociation of Si{sub 2}F{sub 6} irradiated with two-color CO{sub 2} laser light

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Atsushi; Ohba, Hironori; Hashimoto, Masashi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Ishii, Takeshi; Ohya, Akio [Nuclear Development Corp., Tokai, Ibaraki (Japan); Arai, Shigeyoshi [Hill Research Co. Ltd., Tokyo (Japan)

    2002-08-01

    Silicon isotope separation has been done by utilizing the Infrared Multiphoton Dissociation (IRMPD) of Si{sub 2}F{sub 6} irradiated with two-color CO{sub 2} laser lights. The two-color excitation method improved the separation efficiency keeping the high enrichment factors. For example, 99.74% of {sup 28}Si was obtained at 49.63% dissociation of Si{sub 2}F{sub 6} after the simultaneous irradiation of 200 pulses with 966.23 cm{sup -1} photons (0.084 J/cm{sup 2}) and 954.55 cm{sup -1} photons (0.658 J/cm{sup 2}), while 2000 pulses were needed to obtain 99.35% of {sup 28}Si at 35.6% dissociation in the case of only one-color irradiation at 954.55 cm{sup -1} (0.97 J/cm{sup 2}). (author)

  15. Silicon isotope separation utilizing infrared multiphoton dissociation of Si2F6 irradiated with two-color CO2 laser light

    International Nuclear Information System (INIS)

    Yokoyama, Atsushi; Ohba, Hironori; Hashimoto, Masashi; Arai, Shigeyoshi

    2002-01-01

    Silicon isotope separation has been done by utilizing the Infrared Multiphoton Dissociation (IRMPD) of Si 2 F 6 irradiated with two-color CO 2 laser lights. The two-color excitation method improved the separation efficiency keeping the high enrichment factors. For example, 99.74% of 28 Si was obtained at 49.63% dissociation of Si 2 F 6 after the simultaneous irradiation of 200 pulses with 966.23 cm -1 photons (0.084 J/cm 2 ) and 954.55 cm -1 photons (0.658 J/cm 2 ), while 2000 pulses were needed to obtain 99.35% of 28 Si at 35.6% dissociation in the case of only one-color irradiation at 954.55 cm -1 (0.97 J/cm 2 ). (author)

  16. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  17. Visible Light Emission from Atomic Scale Patterns Fabricated by the Scanning Tunneling Microscope

    DEFF Research Database (Denmark)

    Thirstrup, C.; Sakurai, M.; Stokbro, Kurt

    1999-01-01

    Scanning tunneling microscope (STM) induced light emission from artificial atomic scale structures comprising silicon dangling bonds on hydrogen-terminated Si(001) surfaces has been mapped spatially and analyzed spectroscopically in the visible spectral range. The light emission is based on a novel...

  18. Light

    CERN Document Server

    Robertson, William C

    2003-01-01

    Why is left right and right left in the mirror? Baffled by the basics of reflection and refraction? Wondering just how the eye works? If you have trouble teaching concepts about light that you don t fully grasp yourself, get help from a book that s both scientifically accurate and entertaining with Light. By combining clear explanations, clever drawings, and activities that use easy-to-find materials, this book covers what science teachers and parents need to know to teach about light with confidence. It uses ray, wave, and particle models of light to explain the basics of reflection and refraction, optical instruments, polarization of light, and interference and diffraction. There s also an entire chapter on how the eye works. Each chapter ends with a Summary and Applications section that reinforces concepts with everyday examples. Whether you need a deeper understanding of how light bends or a good explanation of why the sky is blue, you ll find Light more illuminating and accessible than a college textbook...

  19. Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device

    KAUST Repository

    Tsai, Meng-Lin; Tsai, Dung-Sheng; Tang, Libin; Chen, Lih-Juann; Lau, Shu Ping; He, Jr-Hau

    2017-01-01

    Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated

  20. Plasmonic Circuit Theory for Multiresonant Light Funneling to a Single Spatial Hot Spot.

    Science.gov (United States)

    Hughes, Tyler W; Fan, Shanhui

    2016-09-14

    We present a theoretical framework, based on plasmonic circuit models, for generating a multiresonant field intensity enhancement spectrum at a single "hot spot" in a plasmonic device. We introduce a circuit model, consisting of an array of coupled LC resonators, that directs current asymmetrically in the array, and we show that this circuit can funnel energy efficiently from each resonance to a single element. We implement the circuit model in a plasmonic nanostructure consisting of a series of metal bars of differing length, with nearest neighbor metal bars strongly coupled electromagnetically through air gaps. The resulting nanostructure resonantly traps different wavelengths of incident light in separate gap regions, yet it funnels the energy of different resonances to a common location, which is consistent with our circuit model. Our work is important for a number of applications of plasmonic nanoantennas in spectroscopy, such as in single-molecule fluorescence spectroscopy or Raman spectroscopy.

  1. Design and implementation of an integrated architecture for massive parallel data treatment of analogue signals supplied by silicon detectors of very high spatial resolution

    International Nuclear Information System (INIS)

    Michel, J.

    1993-02-01

    This doctorate thesis studies an integrated architecture designed to a parallel massive treatment of analogue signals supplied by silicon detectors of very high spatial resolution. The first chapter is an introduction presenting the general outline and the triggering conditions of the spectrometer. Chapter two describes the operational structure of a microvertex detector made of Si micro-plates associated to the measuring chains. Information preconditioning is related to the pre-amplification stage, to the pile-up effects and to the reduction in the time characteristic due to the high counting rates. The chapter three describes the architecture of the analogue delay buffer, makes an analysis of the intrinsic noise and presents the operational testings and input/output control operations. The fourth chapter is devoted to the description of the analogue pulse shape processor and gives also the testings and the corresponding measurements on the circuit. Finally, the chapter five deals with the simplest modeling of the entire conditioning chain. Also, the testings and measuring procedures are here discussed. In conclusion the author presents some prospects for improving the signal-to-noise ratio by summation of the de-convoluted micro-paths. 78 refs., 78 figs., 1 annexe

  2. High-efficiency and flexible generation of vector vortex optical fields by a reflective phase-only spatial light modulator.

    Science.gov (United States)

    Cai, Meng-Qiang; Wang, Zhou-Xiang; Liang, Juan; Wang, Yan-Kun; Gao, Xu-Zhen; Li, Yongnan; Tu, Chenghou; Wang, Hui-Tian

    2017-08-01

    The scheme for generating vector optical fields should have not only high efficiency but also flexibility for satisfying the requirements of various applications. However, in general, high efficiency and flexibility are not compatible. Here we present and experimentally demonstrate a solution to directly, flexibly, and efficiently generate vector vortex optical fields (VVOFs) with a reflective phase-only liquid crystal spatial light modulator (LC-SLM) based on optical birefringence of liquid crystal molecules. To generate the VVOFs, this approach needs in principle only a half-wave plate, an LC-SLM, and a quarter-wave plate. This approach has some advantages, including a simple experimental setup, good flexibility, and high efficiency, making the approach very promising in some applications when higher power is need. This approach has a generation efficiency of 44.0%, which is much higher than the 1.1% of the common path interferometric approach.

  3. Lighting up the World The first global application of the open source, spatial electrification toolkit (ONSSET)

    Science.gov (United States)

    Mentis, Dimitrios; Howells, Mark; Rogner, Holger; Korkovelos, Alexandros; Siyal, Shahid; Broad, Oliver; Zepeda, Eduardo; Bazilian, Morgan

    2016-04-01

    In September 2015, the international community has adopted a new set of targets, following and expanding on the millennium development goals (MDGs), the Sustainable Development Goals (SDGs). Ensuring access to affordable, reliable, sustainable and modern energy for all is one of the 17 set goals that each country should work towards realizing. According to the latest Global Tracking Framework, 15% of the global population live without access to electricity. The majority of those (87%) reside in rural areas. Countries can reach universal access through various electrification options, depending on different levels of energy intensity and local characteristics of the studied areas, such as renewable resources availability, spatially differentiated costs of diesel-fuelled electricity generation, distance from power network and major cities, population density and others, data which are usually inadequate in national databases. This general paucity of reliable energy-related information in developing countries calls for the utilization of geospatial data. This paper presents a Geographic Information Systems (GIS) based electrification analysis for all countries that have not yet reached full access to electricity (Sub-Saharan Africa, Developing Asia, Latin America and Middle East). The cost optimal mix of electrification options ranges from grid extensions to mini-grid and stand-alone applications and is identified for all relevant countries. It is illustrated how this mix is influenced by scrolling through various electrification levels and different oil prices. Such an analysis helps direct donors and investors and inform multinational actions with regards to investments related to energy access.

  4. Multi-point laser spark generation for internal combustion engines using a spatial light modulator

    International Nuclear Information System (INIS)

    Lyon, Elliott; Kuang, Zheng; Dearden, Geoff; Cheng, Hua; Page, Vincent; Shenton, Tom

    2014-01-01

    This paper reports on a technique demonstrating for the first time successful multi-point laser-induced spark generation, which is variable in three dimensions and derived from a single laser beam. Previous work on laser ignition of internal combustion engines found that simultaneously igniting in more than one location resulted in more stable and faster combustion – a key potential advantage over conventional spark ignition. However, previous approaches could only generate secondary foci at fixed locations. The work reported here is an experimental technique for multi-point laser ignition, in which several sparks with arbitrary spatial location in three dimensions are created by variable diffraction of a pulsed single laser beam source and transmission through an optical plug. The diffractive multi-beam arrays and patterns are generated using a spatial light modulator on which computer generated holograms are displayed. A gratings and lenses algorithm is used to accurately modulate the phase of the input laser beam and create multi-beam output. The underpinning theory, experimental arrangement and results obtained are presented and discussed. (paper)

  5. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  6. Improving calibration and validation of cosmic-ray neutron sensors in the light of spatial sensitivity

    Directory of Open Access Journals (Sweden)

    M. Schrön

    2017-10-01

    Full Text Available In the last few years the method of cosmic-ray neutron sensing (CRNS has gained popularity among hydrologists, physicists, and land-surface modelers. The sensor provides continuous soil moisture data, averaged over several hectares and tens of decimeters in depth. However, the signal still may contain unidentified features of hydrological processes, and many calibration datasets are often required in order to find reliable relations between neutron intensity and water dynamics. Recent insights into environmental neutrons accurately described the spatial sensitivity of the sensor and thus allowed one to quantify the contribution of individual sample locations to the CRNS signal. Consequently, data points of calibration and validation datasets are suggested to be averaged using a more physically based weighting approach. In this work, a revised sensitivity function is used to calculate weighted averages of point data. The function is different from the simple exponential convention by the extraordinary sensitivity to the first few meters around the probe, and by dependencies on air pressure, air humidity, soil moisture, and vegetation. The approach is extensively tested at six distinct monitoring sites: two sites with multiple calibration datasets and four sites with continuous time series datasets. In all cases, the revised averaging method improved the performance of the CRNS products. The revised approach further helped to reveal hidden hydrological processes which otherwise remained unexplained in the data or were lost in the process of overcalibration. The presented weighting approach increases the overall accuracy of CRNS products and will have an impact on all their applications in agriculture, hydrology, and modeling.

  7. Improving calibration and validation of cosmic-ray neutron sensors in the light of spatial sensitivity

    Science.gov (United States)

    Schrön, Martin; Köhli, Markus; Scheiffele, Lena; Iwema, Joost; Bogena, Heye R.; Lv, Ling; Martini, Edoardo; Baroni, Gabriele; Rosolem, Rafael; Weimar, Jannis; Mai, Juliane; Cuntz, Matthias; Rebmann, Corinna; Oswald, Sascha E.; Dietrich, Peter; Schmidt, Ulrich; Zacharias, Steffen

    2017-10-01

    In the last few years the method of cosmic-ray neutron sensing (CRNS) has gained popularity among hydrologists, physicists, and land-surface modelers. The sensor provides continuous soil moisture data, averaged over several hectares and tens of decimeters in depth. However, the signal still may contain unidentified features of hydrological processes, and many calibration datasets are often required in order to find reliable relations between neutron intensity and water dynamics. Recent insights into environmental neutrons accurately described the spatial sensitivity of the sensor and thus allowed one to quantify the contribution of individual sample locations to the CRNS signal. Consequently, data points of calibration and validation datasets are suggested to be averaged using a more physically based weighting approach. In this work, a revised sensitivity function is used to calculate weighted averages of point data. The function is different from the simple exponential convention by the extraordinary sensitivity to the first few meters around the probe, and by dependencies on air pressure, air humidity, soil moisture, and vegetation. The approach is extensively tested at six distinct monitoring sites: two sites with multiple calibration datasets and four sites with continuous time series datasets. In all cases, the revised averaging method improved the performance of the CRNS products. The revised approach further helped to reveal hidden hydrological processes which otherwise remained unexplained in the data or were lost in the process of overcalibration. The presented weighting approach increases the overall accuracy of CRNS products and will have an impact on all their applications in agriculture, hydrology, and modeling.

  8. Autostereoscopic three-dimensional display by combining a single spatial light modulator and a zero-order nulled grating

    Science.gov (United States)

    Su, Yanfeng; Cai, Zhijian; Liu, Quan; Lu, Yifan; Guo, Peiliang; Shi, Lingyan; Wu, Jianhong

    2018-04-01

    In this paper, an autostereoscopic three-dimensional (3D) display system based on synthetic hologram reconstruction is proposed and implemented. The system uses a single phase-only spatial light modulator to load the synthetic hologram of the left and right stereo images, and the parallax angle between two reconstructed stereo images is enlarged by a grating to meet the split angle requirement of normal stereoscopic vision. To realize the crosstalk-free autostereoscopic 3D display with high light utilization efficiency, the groove parameters of the grating are specifically designed by the rigorous coupled-wave theory for suppressing the zero-order diffraction, and then the zero-order nulled grating is fabricated by the holographic lithography and the ion beam etching. Furthermore, the diffraction efficiency of the fabricated grating is measured under the illumination of a laser beam with a wavelength of 532 nm. Finally, the experimental verification system for the proposed autostereoscopic 3D display is presented. The experimental results prove that the proposed system is able to generate stereoscopic 3D images with good performances.

  9. DEM RECONSTRUCTION USING LIGHT FIELD AND BIDIRECTIONAL REFLECTANCE FUNCTION FROM MULTI-VIEW HIGH RESOLUTION SPATIAL IMAGES

    Directory of Open Access Journals (Sweden)

    F. de Vieilleville

    2016-06-01

    Full Text Available This paper presents a method for dense DSM reconstruction from high resolution, mono sensor, passive imagery, spatial panchromatic image sequence. The interest of our approach is four-fold. Firstly, we extend the core of light field approaches using an explicit BRDF model from the Image Synthesis community which is more realistic than the Lambertian model. The chosen model is the Cook-Torrance BRDF which enables us to model rough surfaces with specular effects using specific material parameters. Secondly, we extend light field approaches for non-pinhole sensors and non-rectilinear motion by using a proper geometric transformation on the image sequence. Thirdly, we produce a 3D volume cost embodying all the tested possible heights and filter it using simple methods such as Volume Cost Filtering or variational optimal methods. We have tested our method on a Pleiades image sequence on various locations with dense urban buildings and report encouraging results with respect to classic multi-label methods such as MIC-MAC, or more recent pipelines such as S2P. Last but not least, our method also produces maps of material parameters on the estimated points, allowing us to simplify building classification or road extraction.

  10. Light

    CERN Document Server

    Ditchburn, R W

    1963-01-01

    This classic study, available for the first time in paperback, clearly demonstrates how quantum theory is a natural development of wave theory, and how these two theories, once thought to be irreconcilable, together comprise a single valid theory of light. Aimed at students with an intermediate-level knowledge of physics, the book first offers a historical introduction to the subject, then covers topics such as wave theory, interference, diffraction, Huygens' Principle, Fermat's Principle, and the accuracy of optical measurements. Additional topics include the velocity of light, relativistic o

  11. Solar cells based on particulate structure of active layer: Investigation of light absorption by an ordered system of spherical submicron silicon particles

    Science.gov (United States)

    Miskevich, Alexander A.; Loiko, Valery A.

    2015-12-01

    Enhancement of the performance of photovoltaic cells through increasing light absorption due to optimization of an active layer is considered. The optimization consists in creation of particulate structure of active layer. The ordered monolayers and multilayers of submicron crystalline silicon (c-Si) spherical particles are examined. The quasicrystalline approximation (QCA) and the transfer matrix method (TMM) are used to calculate light absorption in the wavelength range from 0.28 μm to 1.12 μm. The integrated over the terrestial solar spectral irradiance "Global tilt" ASTM G173-03 absorption coefficient is calculated. In the wavelength range of small absorption index of c-Si (0.8-1.12 μm) the integral absorption coefficient of monolayer can be more than 20 times higher than the one of the plane-parallel plate of the equivalent volume of material. In the overall considered range (0.28-1.12 μm) the enhancement factor up to ~1.45 for individual monolayer is observed. Maximum value of the spectral absorption coefficient approaches unity for multilayers consisting of large amount of sparse monolayers of small particles. Multilayers with variable concentration and size of particles in the monolayer sequences are considered. Absorption increasing by such gradient multilayers as compared to the non-gradient ones is illustrated. The considered structures are promising for creation of high efficiency thin-film solar cells.

  12. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of t...

  13. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2014-01-01

    Photovoltaic system (PV) maintenance and diagnostic tools are often based on performance models of the system, complemented with light current-voltage (I-V) measurements, visual inspection and/or thermal imaging. Although these are invaluable tools in diagnosing PV system performance losses and f...

  14. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  15. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  16. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  17. Silicon photomultipliers for the detection of VUV scintillation light in LXe for the nEXO experiment

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Tobias; Jamil, Ako; Bayerlein, Reimund; Hoessl, Juergen; Hufschmidt, Patrick; Schneider, Judith; Wagenpfeil, Michael; Wrede, Gerrit; Anton, Gisela; Michel, Thilo [Erlangen Centre for Astroparticle Physics, Erlangen 91058 (Germany)

    2016-07-01

    The future nEXO (next Enriched Xenon Observatory) experiment with a single phase TPC design will use about 4 m{sup 2} of SiPMs for the detection of the VUV (vacuum ultraviolet) scintillation light (λ=175 nm) from LXe to search for the neutrinoless double beta (0νββ) decay of {sup 136}Xe. Commercially available SiPMs are not sensitive to ultraviolet light, because of an antireflective coating on top of the sensitive area. In addition, they suffer from relatively high dark count rate at room temperature and correlated avalanches, such as crosstalk and afterpulsing. The core criteria, for having an energy resolution of about 1% (σ) at the Q-value of the 0νββ decay of {sup 136}Xe (2457.8 keV), are a photon detection efficiency (PDE) of at least 15% at 175 nm and a correlated avalanche probability (CAP) of less than 20% at -100 C. We considered different approaches for optimizing both PDE and CAP. These improved SiPMs from several vendors were tested in different test setups at temperatures of about -100 C with respect to the criteria required in the nEXO experiment.

  18. Polycrystalline magnetic garnet films comprising weakly coupled crystallites for piezoelectrically-driven magneto-optic spatial light modulators

    Energy Technology Data Exchange (ETDEWEB)

    Mito, S.; Sakurai, H.; Takagi, H.; Inoue, M. [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Baryshev, A. V. [Electronics-Inspired Interdisciplinary Research Institute Toyohashi, Aichi 441-8580 (Japan); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation)

    2012-04-01

    We have investigated the magnetization process of the polycrystalline magnetic garnet films in order to determine the most suitable composition of garnet films for piezoelectrically-driven magneto-optic spatial light modulators (MOSLMs). For experiment, the bismuth-dysprosium-aluminum-substituted yttrium iron (Bi{sub 1.3}Dy{sub 0.7}Y{sub 1.0}Fe{sub 3.1}Al{sub 1.9}O{sub 12}) garnet films were deposited by an RF magnetron sputter and annealed at 700 deg. C in air. The annealing time was varied in a range of several minutes to control the grain size. The saturation magnetization, the remanent magnetization and the composition of the fabricated garnet films slightly changed versus the annealing time. Experiments showed that the coercivity and the grain size increased at longer annealing; the coercivity was larger for films with bigger grains. This work shows that garnet films with smaller coercivity are most suitable for controlling the magnetization of garnet and, correspondingly, the magneto-optical rotation of MOSLM pixels driven by piezoelectrics.

  19. Radiative Absorption by Light Absorbing Carbon: Uncertainty, Temporal and Spatial Variation in a Typical Polluted City in Yangtze River Delta

    Science.gov (United States)

    Chen, D.; Zhao, Y.; Lyu, R.

    2017-12-01

    The optical properties of light absorbing carbon (LAC) in atmospheric aerosols, including their uncertainties, temporal change and spatial pattern were studied at suburban, urban and industrial sites in Nanjing, a typical polluted city in Yangtze River Delta (YRD). The optical properties of black carbon (BC) and the uncertainty in radiative absorption of BC were quantified combining cavity attenuated phase shift (CAPS) and thermal-optical techniques. It was found that applying a constant value from previous studies for multiple scattering factor could not well represent the actual absorption characteristics of aerosols in Nanjing. The relative deviation between calculated and measured absorption coefficient of BC was up to 56 ± 34%. A significant positive correlation (R2=0.95) was found between multiple scattering factor (C*) and the mixing state of EC (ECopt/EC) within the ECopt/EC ranged 0.43 0.92 (C*=1.64(ECopt/EC)+1.47, 0.43opt/ECcities with heavy particle pollution, since MSOC served as a surrogate for BrC and EC was measured with reliable and effective methods.

  20. Modulation of the pupil function of microscope objective lens for multifocal multi-photon microscopy using a spatial light modulator

    Science.gov (United States)

    Matsumoto, Naoya; Okazaki, Shigetoshi; Takamoto, Hisayoshi; Inoue, Takashi; Terakawa, Susumu

    2014-02-01

    We propose a method for high precision modulation of the pupil function of a microscope objective lens to improve the performance of multifocal multi-photon microscopy (MMM). To modulate the pupil function, we adopt a spatial light modulator (SLM) and place it at the conjugate position of the objective lens. The SLM can generate an arbitrary number of spots to excite the multiple fluorescence spots (MFS) at the desired positions and intensities by applying an appropriate computer-generated hologram (CGH). This flexibility allows us to control the MFS according to the photobleaching level of a fluorescent protein and phototoxicity of a specimen. However, when a large number of excitation spots are generated, the intensity distribution of the MFS is significantly different from the one originally designed due to misalignment of the optical setup and characteristics of the SLM. As a result, the image of a specimen obtained using laser scanning for the MFS has block noise segments because the SLM could not generate a uniform MFS. To improve the intensity distribution of the MFS, we adaptively redesigned the CGH based on the observed MFS. We experimentally demonstrate an improvement in the uniformity of a 10 × 10 MFS grid using a dye solution. The simplicity of the proposed method will allow it to be applied for calibration of MMM before observing living tissue. After the MMM calibration, we performed laser scanning with two-photon excitation to observe a real specimen without detecting block noise segments.

  1. Local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator for three-dimensional microfabrication

    Science.gov (United States)

    Matsuura, Toshiki; Takai, Takanari; Iwata, Futoshi

    2017-10-01

    We describe a novel three-dimensional fabrication technique using local electrophoresis deposition assisted by laser trapping coupled with a spatial light modulator (SLM). In a solution containing nanometer-scale colloidal Au particles, multiple laser spots formed on a conductive substrate by the SLM gathered the nanoparticles together, and then the nanoparticles were electrophoretically deposited onto the substrate by an applied electrical field. However, undesirable sub-spots often appeared due to optical interference from the multiple laser spots, which deteriorated the accuracy of the deposition. To avoid the appearance of undesirable sub-spots, we proposed a method using quasi-multiple spots, which we realized by switching the position of a single spot briefly using the SLM. The method allowed us to deposit multiple dots on the substrate without undesirable sub-dot deposition. By moving the substrate downward during deposition, multiple micro-pillar structures could be fabricated. As a fabrication property, the dependence of the pillar diameter on laser intensity was investigated by changing the number of laser spots. The smallest diameter of the four pillars fabricated in this study was 920 nm at the laser intensity of 2.5 mW. To demonstrate the effectiveness of the method, multiple spiral structures were fabricated. Quadruple spirals of 46 µm in height were successfully fabricated with a growth rate of 0.21 µm/s using 2200 frames of the CGH patterns displayed in the SLM at a frame rate of 10 fps.

  2. Computational hologram synthesis and representation on spatial light modulators for real-time 3D holographic imaging

    International Nuclear Information System (INIS)

    Reichelt, Stephan; Leister, Norbert

    2013-01-01

    In dynamic computer-generated holography that utilizes spatial light modulators, both hologram synthesis and hologram representation are essential in terms of fast computation and high reconstruction quality. For hologram synthesis, i.e. the computation step, Fresnel transform based or point-source based raytracing methods can be applied. In the encoding step, the complex wave-field has to be optimally represented by the SLM with its given modulation capability. For proper hologram reconstruction that implies a simultaneous and independent amplitude and phase modulation of the input wave-field by the SLM. In this paper, we discuss full complex hologram representation methods on SLMs by considering inherent SLM parameter such as modulation type and bit depth on their reconstruction performance such as diffraction efficiency and SNR. We review the three implementation schemes of Burckhardt amplitude-only representation, phase-only macro-pixel representation, and two-phase interference representation. Besides the optical performance we address their hardware complexity and required computational load. Finally, we experimentally demonstrate holographic reconstructions of different representation schemes as obtained by functional prototypes utilizing SeeReal's viewing-window holographic display technology. The proposed hardware implementations enable a fast encoding of complex-valued hologram data and thus will pave the way for commercial real-time holographic 3D imaging in the near future.

  3. Contrast sensitivity to spatial gratings in moderate and dim light conditions in patients with diabetes in the absence of diabetic retinopathy.

    Science.gov (United States)

    Safi, Sare; Rahimi, Anoushiravan; Raeesi, Afsaneh; Safi, Hamid; Aghazadeh Amiri, Mohammad; Malek, Mojtaba; Yaseri, Mehdi; Haeri, Mohammad; Middleton, Frank A; Solessio, Eduardo; Ahmadieh, Hamid

    2017-01-01

    To evaluate the ability of contrast sensitivity (CS) to discriminate loss of visual function in diabetic subjects with no clinical signs of retinopathy relative to that of normal subjects. In this prospective cross-sectional study, we measured CS in 46 diabetic subjects with a mean age of 48±6 years, a best-corrected visual acuity of 20/20 and no signs of diabetic retinopathy. The CS in these subjects was compared with CS measurements in 46 normal control subjects at four spatial frequencies (3, 6, 12, 18 cycles per degree) under moderate (500 lux) and dim (less than 2 lux) background light conditions. CS was approximately 0.16 log units lower in patients with diabetes relative to controls both in moderate and in dim background light conditions. Logistic regression classification and receiver operating characteristic curve analysis indicated that CS analysis using two light conditions was more accurate (0.78) overall compared with CS analysis using only a single illumination condition (accuracy values were 0.67 and 0.70 in moderate and dim light conditions, respectively). Our results showed that patients with diabetes without clinical signs of retinopathy exhibit a uniform loss in CS at all spatial frequencies tested. Measuring the loss in CS at two spatial frequencies (3 and 6 cycles per degree) and two light conditions (moderate and dim) is sufficiently robust to classify diabetic subjects with no retinopathy versus control subjects.

  4. The response of silicon PNCCD sensors with aluminium on-chip filter to visible light, UV- and X-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Granato, Stefanie

    2012-10-18

    There are various scientific applications, from astronomical observations to free electron lasers, that make use of X-ray semiconductor detectors like PNCCDs. The PNCCD is a pixelized semiconductor detector for simultaneous X-ray imaging and spectroscopy. For the seven PNCCD cameras of the eROSITA space telescope, a radiation entrance window including an on-chip optical blocking filter has been designed. The blocking filter is a necessity to minimize electron generation by visible light and UV radiation affecting X-ray spectroscopy. A PNCCD with such a blocking filter has not been used so far in astronomy. The following work deals with the analysis of the response of PNCCDs with on-chip filter. This includes the study of photon absorption and emission processes as well as the transport of electrons inside the detector entrance window. Furthermore it comprises the experimental characterization of the detector properties regarding the attenuation of light as well as their X-ray spectral redistribution function and quantum efficiency. With the ability to reveal the involved physical processes, the PNCCD is subject of analysis and measurement device at the same time. In addition to the results of the measurements, simulations of the solid state physics inside the detector are presented. A Geant4 Monte-Carlo code is extended by the treatment of charge loss in the entrance window and is verified by comparison with experimental data. Reproducing the chain of processes from photon absorption to charge collection, this work provides a detailed understanding of the formation of PNCCD spectra. The spectral features observed in the measurements are attributed to their point of origin inside the detector volume and explained by the model. The findings of this work allow high precision analysis of spectra of silicon detectors, e.g. of the eROSITA data, based on the presented detailed spectral response model.

  5. The response of silicon PNCCD sensors with aluminium on-chip filter to visible light, UV- and X-ray radiation

    International Nuclear Information System (INIS)

    Granato, Stefanie

    2012-01-01

    There are various scientific applications, from astronomical observations to free electron lasers, that make use of X-ray semiconductor detectors like PNCCDs. The PNCCD is a pixelized semiconductor detector for simultaneous X-ray imaging and spectroscopy. For the seven PNCCD cameras of the eROSITA space telescope, a radiation entrance window including an on-chip optical blocking filter has been designed. The blocking filter is a necessity to minimize electron generation by visible light and UV radiation affecting X-ray spectroscopy. A PNCCD with such a blocking filter has not been used so far in astronomy. The following work deals with the analysis of the response of PNCCDs with on-chip filter. This includes the study of photon absorption and emission processes as well as the transport of electrons inside the detector entrance window. Furthermore it comprises the experimental characterization of the detector properties regarding the attenuation of light as well as their X-ray spectral redistribution function and quantum efficiency. With the ability to reveal the involved physical processes, the PNCCD is subject of analysis and measurement device at the same time. In addition to the results of the measurements, simulations of the solid state physics inside the detector are presented. A Geant4 Monte-Carlo code is extended by the treatment of charge loss in the entrance window and is verified by comparison with experimental data. Reproducing the chain of processes from photon absorption to charge collection, this work provides a detailed understanding of the formation of PNCCD spectra. The spectral features observed in the measurements are attributed to their point of origin inside the detector volume and explained by the model. The findings of this work allow high precision analysis of spectra of silicon detectors, e.g. of the eROSITA data, based on the presented detailed spectral response model.

  6. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    International Nuclear Information System (INIS)

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok; Yoo, Suk Jae; Lee, Bonju; Hong, MunPyo

    2011-01-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  7. Neutronics performances study of silicon carbide as an inert matrix to achieve very high burn-up for light water reactor fuels

    International Nuclear Information System (INIS)

    Chabert, C.; Coulon-Picard, E.; Pelletier, M.

    2007-01-01

    In order to extend the actual limits of light water reactors, the Cea has put emphasis on the exploration of major fuel innovations that would allow us to increase the competitiveness, the safety and flexibility, while keeping the standard PWR environment. Different fuel concepts have been chosen and are actually studied to evaluate their advantages and drawbacks. The objectives of these new fuels are to increase the safety performances and to achieve a very high burn-up. One concept is a CERCER fuel with silicon carbide (SiC) as an inert matrix devoted to reduce the fuel temperature at nominal conditions. Besides the investigation of the neutronic performance, analyses on the thermomechanical performances, the fuel fabrication, the fuel reprocessing and economic aspects have been performed. This paper presents particularly neutronic results obtained for the CERCER fuel. The results show that a very high burn-up, a high safety performance and a better competitiveness cannot be achieved with this fuel concept. (authors)

  8. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  9. Porous silicon: X-rays sensitivity

    International Nuclear Information System (INIS)

    Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

    1994-01-01

    We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

  10. Development of Adaptive Feedback Control System of Both Spatial and Temporal Beam Shaping for UV-Laser Light Source for RF Gun

    CERN Document Server

    Tomizawa, H; Dewa, H; Hanaki, H; Kobayashi, T; Mizuno, A; Suzuki, S; Taniuchi, T; Yanagida, K

    2004-01-01

    The ideal spatial and temporal profiles of a shot-by-shot single laser pulse are essential to suppress the emittance growth of the electron beam from a photo-cathode rf gun. We have been developing highly qualified UV-laser pulse as a light source of the rf gun for an injector candidate of future light sources. The gun cavity is a single-cell pillbox, and the copper inner wall is used as a photo cathode. The electron beam was accelerated up to 4.1 MeV at the maximum electric field on the cathode surface of 175 MV/m. For emittance compensation, two solenoid coils were used. As the first test run, with a microlens array as a simple spatial shaper, we obtained a minimum emittance value of 2 π·mm·mrad with a beam energy of 3.1 MeV, holding its charge to 0.1 nC/bunch. In the next test run, we prepared a deformable mirror for spatial shaping, and a spatial light modulator based on fused-silica plates for temporal shaping. We applied the both adaptive optics to automatically shape the bot...

  11. The development of a colour liquid crystal display spatial light modulator and applications in polychromatic optical data processing

    Science.gov (United States)

    Aiken, John Charles

    The development of a colour Spatial Light Modulator (SLM) and its application to optical information processing is described. Whilst monochrome technology has been established for many years, this is not the case for colour where commercial systems are unavailable. A main aspect of this study is therefore, how the use of colour can add an additional dimension to optical information processing. A well established route to monochrome system development has been the use of (black and white) liquid crystal televisions (LCTV) as SLM, providing useful performance at a low-cost. This study is based on the unique use of a colour display removed from a LCTV and operated as a colour SLM. A significant development has been the replacement of the original TV electronics operating the display with enhanced drive electronics specially developed for this application. Through a computer interface colour images from a drawing package or video camera can now be readily displayed on the LCD as input to an optical system. A detailed evaluation of the colour LCD optical properties, indicates that the new drive electronics have considerably improved the operation of the display for use as a colour SLM. Applications are described employing the use of colour in Fourier plane filtering, image correlation and speckle metrology. The SLM (and optical system) developed demonstrates, how the addition of colour has greatly enhanced its capabilities to implement principles of optical data processing, conventionally performed monochromatically. The hybrid combination employed, combining colour optical data processing with electronic techniques has resulted in a capable development system. Further development of the system using current colour LCDs and the move towards a portable system, is considered in the study conclusion.

  12. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  13. Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

    Directory of Open Access Journals (Sweden)

    V. B. Neimash

    2018-01-01

    Full Text Available This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy in thin-film structures Si-Sn-Si irradiated with pulsed laser light. We have found and analyzed dependencies of the nanocrystals’ size and concentration on the laser pulse intensity for 10 ns and 150 μm duration laser pulses at the wavelengths of 535 nm and 1070 nm. Efficient transformation of the amorphous silicon into a crystalline phase during the 10 ns time interval of the acting laser pulse in the 200 nm thickness films of the amorphous silicon was demonstrated. The results were analyzed theoretically by modeling the spatial and temporal distribution of temperature in the amorphous silicon sample within the laser spot location. Simulations confirmed importance of light absorption depth (irradiation wavelength in formation and evolution of the temperature profile that affects the crystallization processes in irradiated structures.

  14. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  15. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  16. Spatial Terahertz Modulator

    Science.gov (United States)

    Xie, Zhenwei; Wang, Xinke; Ye, Jiasheng; Feng, Shengfei; Sun, Wenfeng; Akalin, Tahsin; Zhang, Yan

    2013-11-01

    Terahertz (THz) technology is a developing and promising candidate for biological imaging, security inspection and communications, due to the low photon energy, the high transparency and the broad band properties of the THz radiation. However, a major encountered bottleneck is lack of efficient devices to manipulate the THz wave, especially to modulate the THz wave front. A wave front modulator should allow the optical or electrical control of the spatial transmission (or reflection) of an input THz wave and hence the ability to encode the information in a wave front. Here we propose a spatial THz modulator (STM) to dynamically control the THz wave front with photo-generated carriers. A computer generated THz hologram is projected onto a silicon wafer by a conventional spatial light modulator (SLM). The corresponding photo-generated carrier spatial distribution will be induced, which forms an amplitude hologram to modulate the wave front of the input THz beam. Some special intensity patterns and vortex beams are generated by using this method. This all-optical controllable STM is structure free, high resolution and broadband. It is expected to be widely used in future THz imaging and communication systems.

  17. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  18. Analysis of the unmodulated diffraction beam of the phase-only liquid crystal spatial light modulator and a method for reducing its influence

    International Nuclear Information System (INIS)

    Qi, Yue; Li, Dayu; Hu, Lifa; Xuan, Li; Xia, Mingliang

    2012-01-01

    As a wavefront corrector, the phase-only liquid crystal spatial light modulator has been widely using in adaptive optics systems. However, the unmodulated diffracted beam of the modulator will affect the light spot centroid detection accuracy of a Shack–Hartmann wavefront sensor and decrease the image quality after correction. In this paper, we have diminished the effect by introducing a modified weight algorithm in our closed-loop adaptive optics system. The Strehl ratio of the image is higher than 0.8 after correction, even when the wavefront aberration is larger than 3 μm. The correction precision and image quality are both improved significantly. (paper)

  19. Energy spectrum of surface electrons over a {sup 3}He – {sup 4}He solution with a spatially non-uniform distribution of the light isotope

    Energy Technology Data Exchange (ETDEWEB)

    Bezsmolnyy, Ya.Yu.; Sokolova, E.S.; Sokolov, S.S. [B.Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, 47 Prospekt Nauky, 61103 Kharkov (Ukraine); Studart, Nelson [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Av. dos Estados, 5001, 09210-580 Santo André, São Paulo (Brazil); Departamento de Física, Universidade Federal de São Carlos, via Washington Luís, km 235, 13565-905 Säo Carlos, São Paulo (Brazil)

    2017-02-15

    The energy gap between the ground and first excited energy levels of surface electrons deposited over a dilute {sup 3}He - {sup 4}He solution is evaluated. Two spatial distributions of {sup 3}He atoms near the free surface solution are considered. One consists of a thin though macroscopic {sup 3}He film and in the other the {sup 3}He concentration varies continuously from the surface inside the liquid. The energy gap is calculated as a function of the parameters of the {sup 3}He spatial distribution for these distributions. It is shown that the energy gap dependence on the distribution parameters allows using measurements of intersubband transitions of the surface electrons to determine the {sup 3}He concentration distribution and, in principle, the nature of the spatial distribution of the light isotope near the surface of the solution.

  20. Exploring the spatial distribution of light interception and photosynthesis of canopies by means of a functional–structural plant model

    Science.gov (United States)

    Sarlikioti, V.; de Visser, P. H. B.; Marcelis, L. F. M.

    2011-01-01

    Background and Aims At present most process-based models and the majority of three-dimensional models include simplifications of plant architecture that can compromise the accuracy of light interception simulations and, accordingly, canopy photosynthesis. The aim of this paper is to analyse canopy heterogeneity of an explicitly described tomato canopy in relation to temporal dynamics of horizontal and vertical light distribution and photosynthesis under direct- and diffuse-light conditions. Methods Detailed measurements of canopy architecture, light interception and leaf photosynthesis were carried out on a tomato crop. These data were used for the development and calibration of a functional–structural tomato model. The model consisted of an architectural static virtual plant coupled with a nested radiosity model for light calculations and a leaf photosynthesis module. Different scenarios of horizontal and vertical distribution of light interception, incident light and photosynthesis were investigated under diffuse and direct light conditions. Key Results Simulated light interception showed a good correspondence to the measured values. Explicitly described leaf angles resulted in higher light interception in the middle of the plant canopy compared with fixed and ellipsoidal leaf-angle distribution models, although the total light interception remained the same. The fraction of light intercepted at a north–south orientation of rows differed from east–west orientation by 10 % on winter and 23 % on summer days. The horizontal distribution of photosynthesis differed significantly between the top, middle and lower canopy layer. Taking into account the vertical variation of leaf photosynthetic parameters in the canopy, led to approx. 8 % increase on simulated canopy photosynthesis. Conclusions Leaf angles of heterogeneous canopies should be explicitly described as they have a big impact both on light distribution and photosynthesis. Especially, the vertical

  1. Exploring the spatial distribution of light interception and photosynthesis of canopies by means of a functional-structural plant model.

    Science.gov (United States)

    Sarlikioti, V; de Visser, P H B; Marcelis, L F M

    2011-04-01

    At present most process-based models and the majority of three-dimensional models include simplifications of plant architecture that can compromise the accuracy of light interception simulations and, accordingly, canopy photosynthesis. The aim of this paper is to analyse canopy heterogeneity of an explicitly described tomato canopy in relation to temporal dynamics of horizontal and vertical light distribution and photosynthesis under direct- and diffuse-light conditions. Detailed measurements of canopy architecture, light interception and leaf photosynthesis were carried out on a tomato crop. These data were used for the development and calibration of a functional-structural tomato model. The model consisted of an architectural static virtual plant coupled with a nested radiosity model for light calculations and a leaf photosynthesis module. Different scenarios of horizontal and vertical distribution of light interception, incident light and photosynthesis were investigated under diffuse and direct light conditions. Simulated light interception showed a good correspondence to the measured values. Explicitly described leaf angles resulted in higher light interception in the middle of the plant canopy compared with fixed and ellipsoidal leaf-angle distribution models, although the total light interception remained the same. The fraction of light intercepted at a north-south orientation of rows differed from east-west orientation by 10 % on winter and 23 % on summer days. The horizontal distribution of photosynthesis differed significantly between the top, middle and lower canopy layer. Taking into account the vertical variation of leaf photosynthetic parameters in the canopy, led to approx. 8 % increase on simulated canopy photosynthesis. Leaf angles of heterogeneous canopies should be explicitly described as they have a big impact both on light distribution and photosynthesis. Especially, the vertical variation of photosynthesis in canopy is such that the

  2. Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    2016-01-01

    In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping pro......, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow......In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping...

  3. Probing Photocurrent Nonuniformities in the Subcells of Monolithic Perovskite/Silicon Tandem Solar Cells

    KAUST Repository

    Song, Zhaoning

    2016-11-23

    Perovskite/silicon tandem solar cells with high power conversion efficiencies have the potential to become a commercially viable photovoltaic option in the near future. However, device design and optimization is challenging because conventional characterization methods do not give clear feedback on the localized chemical and physical factors that limit performance within individual subcells, especially when stability and degradation is a concern. In this study, we use light beam induced current (LBIC) to probe photocurrent collection nonuniformities in the individual subcells of perovskite/silicon tandems. The choices of lasers and light biasing conditions allow efficiency-limiting effects relating to processing defects, optical interference within the individual cells, and the evolution of water-induced device degradation to be spatially resolved. The results reveal several types of microscopic defects and demonstrate that eliminating these and managing the optical properties within the multilayer structures will be important for future optimization of perovskite/silicon tandem solar cells.

  4. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  5. Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Solodar, A., E-mail: asisolodar@gmail.com; Arun Kumar, T.; Sarusi, G.; Abdulhalim, I. [Department of Electro-Optics Engineering and The Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Beer Sheva 84105 (Israel)

    2016-01-11

    Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP, thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.

  6. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  7. Performance characterization of silicon pore optics

    Science.gov (United States)

    Collon, M. J.; Kraft, S.; Günther, R.; Maddox, E.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Wallace, K.; Krumrey, M.; Cibik, L.; Freyberg, M.

    2006-06-01

    The characteristics of the latest generation of assembled silicon pore X-ray optics are discussed in this paper. These very light, stiff and modular high performance pore optics (HPO) have been developed [1] for the next generation of astronomical X-ray telescopes, which require large collecting areas whilst achieving angular resolutions better than 5 arcseconds. The suitability of 12 inch silicon wafers as high quality optical mirrors and the automated assembly process are discussed elsewhere in this conference. HPOs with several tens of ribbed silicon plates are assembled by bending the plates into an accurate cylindrical shape and directly bonding them on top of each other. The achievable figure accuracy is measured during assembly and in test campaigns at X-ray testing facilities like BESSY-II and PANTER. Pencil beam measurements allow gaining information on the quality achieved by the production process with high spatial resolution. In combination with full beam illumination a complete picture of the excellent performance of these optics can be derived. Experimental results are presented and discussed in detail. The results of such campaigns are used to further improve the production process in order to match the challenging XEUS requirements [2] for imaging resolution and mass.

  8. A novel segmentation method for uneven lighting image with noise injection based on non-local spatial information and intuitionistic fuzzy entropy

    Science.gov (United States)

    Yu, Haiyan; Fan, Jiulun

    2017-12-01

    Local thresholding methods for uneven lighting image segmentation always have the limitations that they are very sensitive to noise injection and that the performance relies largely upon the choice of the initial window size. This paper proposes a novel algorithm for segmenting uneven lighting images with strong noise injection based on non-local spatial information and intuitionistic fuzzy theory. We regard an image as a gray wave in three-dimensional space, which is composed of many peaks and troughs, and these peaks and troughs can divide the image into many local sub-regions in different directions. Our algorithm computes the relative characteristic of each pixel located in the corresponding sub-region based on fuzzy membership function and uses it to replace its absolute characteristic (its gray level) to reduce the influence of uneven light on image segmentation. At the same time, the non-local adaptive spatial constraints of pixels are introduced to avoid noise interference with the search of local sub-regions and the computation of local characteristics. Moreover, edge information is also taken into account to avoid false peak and trough labeling. Finally, a global method based on intuitionistic fuzzy entropy is employed on the wave transformation image to obtain the segmented result. Experiments on several test images show that the proposed method has excellent capability of decreasing the influence of uneven illumination on images and noise injection and behaves more robustly than several classical global and local thresholding methods.

  9. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  10. Towards real-time non contact spatial resolved oxygenation monitoring using a multi spectral filter array camera in various light conditions

    Science.gov (United States)

    Bauer, Jacob R.; van Beekum, Karlijn; Klaessens, John; Noordmans, Herke Jan; Boer, Christa; Hardeberg, Jon Y.; Verdaasdonk, Rudolf M.

    2018-02-01

    Non contact spatial resolved oxygenation measurements remain an open challenge in the biomedical field and non contact patient monitoring. Although point measurements are the clinical standard till this day, regional differences in the oxygenation will improve the quality and safety of care. Recent developments in spectral imaging resulted in spectral filter array cameras (SFA). These provide the means to acquire spatial spectral videos in real-time and allow a spatial approach to spectroscopy. In this study, the performance of a 25 channel near infrared SFA camera was studied to obtain spatial oxygenation maps of hands during an occlusion of the left upper arm in 7 healthy volunteers. For comparison a clinical oxygenation monitoring system, INVOS, was used as a reference. In case of the NIRS SFA camera, oxygenation curves were derived from 2-3 wavelength bands with a custom made fast analysis software using a basic algorithm. Dynamic oxygenation changes were determined with the NIR SFA camera and INVOS system at different regional locations of the occluded versus non-occluded hands and showed to be in good agreement. To increase the signal to noise ratio, algorithm and image acquisition were optimised. The measurement were robust to different illumination conditions with NIR light sources. This study shows that imaging of relative oxygenation changes over larger body areas is potentially possible in real time.

  11. Spectral and spatial properties of polarized light reflections from the arms of squid (Loligo pealeii) and cuttlefish (Sepia officinalis L.).

    Science.gov (United States)

    Chiou, Tsyr-Huei; Mäthger, Lydia M; Hanlon, Roger T; Cronin, Thomas W

    2007-10-01

    On every arm of cuttlefish and squid there is a stripe of high-reflectance iridophores that reflects highly polarized light. Since cephalopods possess polarization vision, it has been hypothesized that these polarized stripes could serve an intraspecific communication function. We determined how polarization changes when these boneless arms move. By measuring the spectral and polarizing properties of the reflected light from samples at various angles of tilt and rotation, we found that the actual posture of the arm has little or no effect on partial polarization or the e-vector angle of the reflected light. However, when the illumination angle changed, the partial polarization of the reflected light also changed. The spectral reflections of the signals were also affected by the angle of illumination but not by the orientation of the sample. Electron microscope samples showed that these stripes are composed of several groups of multilayer platelets within the iridophores. The surface normal to each group is oriented at a different angle, which produces essentially constant reflection of polarized light over a range of viewing angles. These results demonstrate that cuttlefish and squid could send out reliable polarization signals to a receiver regardless of arm orientation.

  12. Trinary arithmetic and logic unit (TALU) using savart plate and spatial light modulator (SLM) suitable for optical computation in multivalued logic

    Science.gov (United States)

    Ghosh, Amal K.; Bhattacharya, Animesh; Raul, Moumita; Basuray, Amitabha

    2012-07-01

    Arithmetic logic unit (ALU) is the most important unit in any computing system. Optical computing is becoming popular day-by-day because of its ultrahigh processing speed and huge data handling capability. Obviously for the fast processing we need the optical TALU compatible with the multivalued logic. In this regard we are communicating the trinary arithmetic and logic unit (TALU) in modified trinary number (MTN) system, which is suitable for the optical computation and other applications in multivalued logic system. Here the savart plate and spatial light modulator (SLM) based optoelectronic circuits have been used to exploit the optical tree architecture (OTA) in optical interconnection network.

  13. Color-filter-free spatial visible light communication using RGB-LED and mobile-phone camera.

    Science.gov (United States)

    Chen, Shih-Hao; Chow, Chi-Wai

    2014-12-15

    A novel color-filter-free visible-light communication (VLC) system using red-green-blue (RGB) light emitting diode (LED) and mobile-phone camera is proposed and demonstrated for the first time. A feature matching method, which is based on the scale-invariant feature transform (SIFT) algorithm for the received grayscale image is used instead of the chromatic information decoding method. The proposed method is simple and saves the computation complexity. The signal processing is based on the grayscale image computation; hence neither color-filter nor chromatic channel information is required. A proof-of-concept experiment is performed and high performance channel recognition is achieved.

  14. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  15. The generation of flat-top beams by complex amplitude modulation with a phase-only spatial light modulator

    CSIR Research Space (South Africa)

    Hendriks, A

    2012-08-01

    Full Text Available amplitude modulation of the light, i.e., in amplitude and phase. We outline the theoretical concept, and then illustrate its use with the example of the laser beam shaping of Gaussian beams into flat-top beams. We quantify the performance of this approach...

  16. Exploring the spatial distribution of light interception and photosynthesis of canopies by means of a functional-structural plant model

    NARCIS (Netherlands)

    Sarlikioti, V.; Visser, de P.H.B.; Marcelis, L.F.M.

    2011-01-01

    Background and Aims - At present most process-based models and the majority of three-dimensional models include simplifications of plant architecture that can compromise the accuracy of light interception simulations and, accordingly, canopy photosynthesis. The aim of this paper is to analyse canopy

  17. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  18. Towards Hydrological Applications of Stationary and Roving Cosmic-Ray Neutron Sensors in the Light of Spatial Sensitivity

    Science.gov (United States)

    Schrön, M.; Köhli, M.; Rosolem, R.; Baroni, G.; Bogena, H. R.; Brenner, J.; Zink, M.; Rebmann, C.; Oswald, S. E.; Dietrich, P.; Samaniego, L. E.; Zacharias, S.

    2017-12-01

    Cosmic-Ray Neutron Sensing (CRNS) has become a promising and unique method to monitor water content at an effective scale of tens of hectares in area and tens of centimeters in depth. The large footprint is particularly beneficial for hydrological models that operate at these scales.However, reliable estimates of average soil moisture require a detailed knowledge about the sensitivity of the signal to spatial inhomogeneity within the footprint. From this perspective, the large integrating volume challenges data interpretation, validation, and calibration of the sensor. Can we still generate reliable data for hydrological applications? One of the top challenges in the last years was to find out where the signal comes from, and how sensitive it is to spatial variabilities of moisture. Neutron physics simulations have shown that the neutron signal represents a non-linearly weighted average of soil water in the footprint. With the help of the so-called spatial sensitivity functions it is now possible to quantify the contribution of certain regions to the neutron signal. We present examples of how this knowledge can help (1) to understand the contribution of irrigated and sealed areas in the footprint, (2) to improve calibration and validation of the method, and (3) to even reveal excess water storages, e.g. from ponding or rain interception.The spatial sensitivity concept can also explain the influence of dry roads on the neutron signal. Mobile surveys with the CRNS rover have been a common practice to measure soil moisture patterns at the kilometer scale. However, dedicated experiments across agricultural fields in Germany and England have revealed that field soil moisture is significantly underestimated when moving the sensor on roads. We show that knowledge about the spatial sensitivity helps to correct survey data for these effects, depending on road material, width, and distance from the road. The recent methodological advances allow for improved signal

  19. Wetland Accretion Rates Along Coastal Louisiana: Spatial and Temporal Variability in Light of Hurricane Isaac’s Impacts

    Directory of Open Access Journals (Sweden)

    Thomas A. Bianchette

    2015-12-01

    Full Text Available The wetlands of the southern Louisiana coast are disappearing due to a host of environmental stressors. Thus, it is imperative to analyze the spatial and temporal variability of wetland vertical accretion rates. A key question in accretion concerns the role of landfalling hurricanes as a land-building agent, due to their propensity to deposit significant volumes of inorganic sediments. Since 1996, thousands of accretion measurements have been made at 390 sites across coastal Louisiana as a result of a regional monitoring network, called the Coastal Reference Monitoring System (CRMS. We utilized this dataset to analyze the spatial and temporal patterns of accretion by mapping rates during time periods before, around, and after the landfall of Hurricane Isaac (2012. This analysis is vital for quantifying the role of hurricanes as a land-building agent and for understanding the main mechanism causing heightened wetland accretion. The results show that accretion rates averaged about 2.89 cm/year from stations sampled before Isaac, 4.04 cm/year during the period encompassing Isaac, and 2.38 cm/year from sites established and sampled after Isaac. Accretion rates attributable to Isaac’s effects were therefore 40% and 70% greater than before and after the event, respectively, indicating the event’s importance toward coastal land-building. Accretion associated with Isaac was highest at sites located 70 kilometers from the storm track, particularly those near the Mississippi River and its adjacent distributaries and lakes. This spatial pattern of elevated accretion rates indicates that freshwater flooding from fluvial channels, rather than storm surge from the sea per se, is the main mechanism responsible for increased wetland accretion. This significance of riverine flooding has implications toward future coastal restoration policies and practices.

  20. Electrically driven light emission from an array of Si nanoclusters

    International Nuclear Information System (INIS)

    Mazzitello, K I; Martin, H O; Aldao, C M; Roman, H E

    2004-01-01

    Charge transport and light emission properties of an array of silicon nanoclusters (NCs), sandwiched between a p-type and an n-type doped silicon crystal, are studied theoretically by assuming that electrons and holes enter from the opposite sides of the array in response to an applied electric field. The size of the NCs considered ranges from 16 nm down to 3.6 nm and their spatial distribution is optimized so that light emission, resulting from radiative recombinations, is peaked in the visible red around 1.8 eV. The light emission efficiency is limited by the carrier hopping times and is found to be in the range 2-0.5%, for fields ranging from 100 kV cm -1 to 500 kV cm -1 , respectively

  1. CW-Laser-Induced Solid-State Reactions in Mixed Micron-Sized Particles of Silicon Monoxide and Titanium Monoxide: Nano-Structured Composite with Visible Light Absorption

    Czech Academy of Sciences Publication Activity Database

    Křenek, T.; Tesař, J.; Kupčík, Jaroslav; Netrvalová, M.; Pola, M.; Jandová, Věra; Pokorná, Dana; Cuřínová, Petra; Bezdička, Petr; Pola, Josef

    2017-01-01

    Roč. 27, č. 6 (2017), s. 1640-1648 ISSN 1574-1443 Institutional support: RVO:61388980 ; RVO:67985858 Keywords : Cw CO2 laser heating * IR laser imaging * Silicon monoxide * Solid state redox reactions * Ti/Si/O composite * Titanium monoxide Subject RIV: CA - Inorganic Chemistry; CI - Industrial Chemistry, Chemical Engineering (UCHP-M) OBOR OECD: Inorganic and nuclear chemistry; Chemical process engineering (UCHP-M) Impact factor: 1.577, year: 2016

  2. SPATIALLY RESOLVING THE HK Tau B EDGE-ON DISK FROM 1.2 TO 4.7 μm: A UNIQUE SCATTERED LIGHT DISK

    International Nuclear Information System (INIS)

    McCabe, C.; Duchene, G.; Pinte, C.; Menard, F.; Stapelfeldt, K. R.; Ghez, A. M.

    2011-01-01

    We present spatially resolved scattered light images of the circumstellar disk around HK Tau B at 3.8 and 4.7 μm taken with the Keck Telescope Laser Guide Star Adaptive Optics (AO) system, and 1.6-2.12 μm images taken with the Very Large Telescope/NACO AO system. Combined with previously published optical Hubble Space Telescope data, we investigate the spatially resolved scattered light properties of this edge-on circumstellar disk and probe for the presence of large grains. The 0.6-3.8 μm scattered light observations reveal strong, and in some cases, unusual, wavelength dependencies in the observed disk morphology. The separation between the two scattered light nebulae, which is directly proportional to the disk-mass-opacity product, decreases by 30% between 0.6 and 3.8 μm. Over the same wavelength range, the FWHM of the disk nebulosity declines by a factor of two, while the flux ratio between the two nebulae increases by a factor of ∼8. No other disk known to date shows a flux ratio that increases with wavelength. Both the FWHM and nebula flux ratio are affected by the scattering phase function and the observed behavior can most readily be explained by a phase function that becomes more forward throwing with wavelength. The multi-wavelength scattered light observations also confirm the asymmetric nature of the disk and show that the level of asymmetry is a function of wavelength. We use the MCFOST radiative transfer code to model the disk at four wavelengths, corresponding to the I, H, Ks, and L' bandpasses. A single power-law grain size distribution can recreate the observed disk properties simultaneously at all four wavelengths. Bayesian analysis of the dust parameters finds a 99% probability that the maximum grain size is 5.5 μm or larger. We also find that the grain size distribution is steep, with a 99% probability of a power-law index of 4.2 or larger, suggesting that these large grains are a small fraction of the overall dust population. The best

  3. The charge collection in silicon strip detectors

    International Nuclear Information System (INIS)

    Boehringer, T.; Hubbeling, L.; Weilhammer, P.; Kemmer, J.; Koetz, U.; Riebesell, M.; Belau, E.; Klanner, R.; Lutz, G.; Neugebauer, E.; Seebrunner, H.J.; Wylie, A.

    1983-02-01

    The charge collection in silicon detectors has been studied, by measuring the response to high-energy particles of a 20μm pitch strip detector as a function of applied voltage and magnetic field. The results are well described by a simple model. The model is used to predict the spatial resolution of silicon strip detectors and to propose a detector with optimized spatial resolution. (orig.)

  4. Study of the defects related to oxygen in Czochralski silicon destined to photovoltaic solar cells - Influence of isovalent impurities

    International Nuclear Information System (INIS)

    Tanay, Florent

    2013-01-01

    This study aims at understanding the effects of two main defects related to oxygen, the boron-oxygen complexes (responsible for light-induced degradation of the carrier lifetime) and the thermal donors (among other things, responsible for variations of the conductivity), on the electric and photovoltaic properties of silicon. More precisely, the interactions of isovalent impurities, known for modifying the oxygen spatial distribution, with these defects were studied. Two experimental protocols were first developed to evaluate the light-induced degradation of the carrier lifetime in iron-rich silicon. Then, the introduction in silicon of germanium and tin in high quantity were shown not to significantly influence the conversion efficiency of the cells. However, contrary to recent studies from the literature, no reduction due to germanium co-doping or to tin co-doping of the light-induced degradation of the photovoltaic performances was observed. However carbon was shown to lead to a slowdown of the degradation due to boron-oxygen complexes. Moreover contrary to tin which has no influence on the thermal donor generation, germanium slows down their formation. An empirical expression has been proposed to take into account this effect for a large range of germanium concentrations. Eventually in highly doped and compensated silicon, the thermal donor generation is identical as in conventional silicon, which experimentally confirms that the thermal donor formation is limited by the electron density. (author) [fr

  5. Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

    International Nuclear Information System (INIS)

    Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo

    2006-01-01

    An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

  6. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Directory of Open Access Journals (Sweden)

    Kae Dal Kwack

    2011-01-01

    Full Text Available A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  7. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  8. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

  9. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  10. Optical and microstructural investigations of porous silicon

    Indian Academy of Sciences (India)

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  11. The spectral and spatial distribution of light pollution in the waters of the northern Gulf of Aqaba (Eilat).

    Science.gov (United States)

    Tamir, Raz; Lerner, Amit; Haspel, Carynelisa; Dubinsky, Zvy; Iluz, David

    2017-02-10

    The urbanization of the shores of the Gulf of Aqaba has exposed the marine environment there, including unique fringing coral reefs, to strong anthropogenic light sources. Here we present the first in situ measurements of artificial nighttime light under water in such an ecosystem, with irradiance measured in 12 wavelength bands, at 19 measurement stations spread over 44 square km, and at 30 depths down to 30-m depth. At 1-m depth, we find downwelling irradiance values that vary from 4.6 × 10 -4  μW cm -2  nm -1 500 m from the city to 1 × 10 -6  μW cm -2  nm -1 in the center of the gulf (9.5 km from the city) in the yellow channel (589-nm wavelength) and from 1.3 × 10 -4  μW cm -2  nm -1 to 4.3 × 10 -5  μW cm -2  nm -1 in the blue channel (443-nm wavelength). Down to 10-m depth, we find downwelling irradiance values that vary from 1 × 10 -6  μW cm -2  nm -1 to 4.6 × 10 -4  μW cm -2  nm -1 in the yellow channel and from 2.6 × 10 -5  μW cm -2  nm -1 to 1.3 × 10 -4  μW cm -2  nm -1 in the blue channel, and we even detected a signal at 30-m depth. This irradiance could influence such biological processes as the tuning of circadian clocks, the synchronization of coral spawning, recruitment and competition, vertical migration of demersal plankton, feeding patterns, and prey/predator visual interactions.

  12. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  13. InP membrane on silicon integration technology

    NARCIS (Netherlands)

    Smit, M.K.

    2013-01-01

    Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

  14. Porous silicon nanoparticles for target drag delivery: structure and morphology

    International Nuclear Information System (INIS)

    Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

    2015-01-01

    Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

  15. Hole Injection at the Silicon/Aqueous Electrolyte Interface: A Possible Mechanism for Chemiluminescence from Porous Silicon

    NARCIS (Netherlands)

    Kooij, Ernst S.; Butter, K.; Kelly, J.J.

    1998-01-01

    The reduction mechanism of oxidizing agents at silicon and porous silicon electrodes has been investigated in relation to light emission from the porous semiconductor. Oxidizing agents with a positive redox potential are shown to inject holes into HF-pretreated silicon. However, as the degree of

  16. Investigation of the thermal and optical performance of a spatial light modulator with high average power picosecond laser exposure for materials processing applications

    Science.gov (United States)

    Zhu, G.; Whitehead, D.; Perrie, W.; Allegre, O. J.; Olle, V.; Li, Q.; Tang, Y.; Dawson, K.; Jin, Y.; Edwardson, S. P.; Li, L.; Dearden, G.

    2018-03-01

    Spatial light modulators (SLMs) addressed with computer generated holograms (CGHs) can create structured light fields on demand when an incident laser beam is diffracted by a phase CGH. The power handling limitations of these devices based on a liquid crystal layer has always been of some concern. With careful engineering of chip thermal management, we report the detailed optical phase and temperature response of a liquid cooled SLM exposed to picosecond laser powers up to 〈P〉  =  220 W at 1064 nm. This information is critical for determining device performance at high laser powers. SLM chip temperature rose linearly with incident laser exposure, increasing by only 5 °C at 〈P〉  =  220 W incident power, measured with a thermal imaging camera. Thermal response time with continuous exposure was 1-2 s. The optical phase response with incident power approaches 2π radians with average power up to 〈P〉  =  130 W, hence the operational limit, while above this power, liquid crystal thickness variations limit phase response to just over π radians. Modelling of the thermal and phase response with exposure is also presented, supporting experimental observations well. These remarkable performance characteristics show that liquid crystal based SLM technology is highly robust when efficiently cooled. High speed, multi-beam plasmonic surface micro-structuring at a rate R  =  8 cm2 s-1 is achieved on polished metal surfaces at 〈P〉  =  25 W exposure while diffractive, multi-beam surface ablation with average power 〈P〉  =100 W on stainless steel is demonstrated with ablation rate of ~4 mm3 min-1. However, above 130 W, first order diffraction efficiency drops significantly in accord with the observed operational limit. Continuous exposure for a period of 45 min at a laser power of 〈P〉  =  160 W did not result in any detectable drop in diffraction efficiency, confirmed afterwards by the efficient

  17. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  18. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  19. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  20. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  1. Fabrication and characterization of Zn O:Zn(n{sup +})/porous-silicon/Si(p) heterojunctions for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez A, M. A. [INAOE, Department of Electronics, 72840 Puebla, Pue. (Mexico); Romero P, G.; Pena S, R. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Ingenieria Electrica, SEES, Av. Intituto Politecnico Nacional No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de Mexico (Mexico); Andraca A, J. A. [IPN, Centro de Nanociencias y Micro y Nanotecnologias, Av. Luis Enrique Erro s/n, Col. San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    The fabrication and characterization of electro luminescent Zn O:Zn(n{sup +})/porous silicon/Si(p) heterojunctions is presented. Highly conductive Zn O films (Zn O:Zn(n{sup +})) were produced by applying a temperature annealing at 400 degrees Celsius by 5 min to the Zn O/Zn/Zn O arrange formed by DC sputtering, and the porous silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The Zn O: Zn(n{sup +})/PS/Si(p) heterojunction is accomplished by applying a brief temperature annealing stage to the entire Zn O/Zn/Zn O/PS/Si structure to preserve the PS luminescent characteristics. The Zn O:Zn(n{sup +}) films were characterized by X-ray diffraction and Hall-van der Pauw measurements. The PS and Zn O:Zn(n{sup +}) films were also studied by photoluminescence (Pl) measurements. The current-voltage characteristics of the heterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor is explained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and into the PS film. The saturation current and the series resistance of the heterostructure were 4 x 10{sup -7} A/cm{sup 2} and 16 Ω-cm{sup 2}, respectively. White color electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 Khz. (Author)

  2. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  3. Design of a photonic integrated circuit (pic) in silicon on isolator (soi) technology for a novel chaotic integrated laser light source (chill)

    NARCIS (Netherlands)

    Westerveld, W.J.

    2009-01-01

    A light source with the brightness of a laser but the bandwidth of a LED is required for different fields of applications, such as inspection and metrology in the semiconductor industry, data encryption in telecommunications and LIDAR. Currently, this issue is addressed by so-called coherence

  4. A light-driven modulation of electric conductance through the adsorption of azobenzene onto silicon-doped- and pyridine-like N3-vacancy graphene.

    Science.gov (United States)

    Zhao, Jun; Liu, Chunyan; Ma, Jing

    2017-12-14

    The ability to modulate the conductance of an electronic device under light irradiation is crucial to the practical applications of nanoscale electronics. Density functional theory calculations predict that the conductance of the photo-responsive graphene-based nanocomposites can be tuned through the noncovalent adsorption of an azobenzene (AB) derivative onto pristine, Si-doped, and pyridine-like N 3 -vacancy graphene. AB@graphene systems were found to exhibit a visible-light response within the low-frequency region, rendering the trans-to-cis isomerizations of these nanocomposites under the irradiation of solar light. The excellent solar light absorption performances of these hybrids can then be used to modulate the conductance of both N 3 -vacancy- and Si-doped-graphene AB hybrids effectively through the reversible change of the effective conjugate length of the AB molecule in the photoisomerization. In addition, the solar thermal energy up to 1.53 eV per AB molecule can be stored in the designed nanocomposites with the doped graphene. These findings provide clues for making multifunctional materials with potential applications as both optically controlled nanoelectronics and solar energy storage devices.

  5. Tight control of light trapping in surface addressable photonic crystal membranes: application to spectrally and spatially selective optical devices (Conference Presentation)

    Science.gov (United States)

    Letartre, Xavier; Blanchard, Cédric; Grillet, Christian; Jamois, Cécile; Leclercq, Jean-Louis; Viktorovitch, Pierre

    2016-04-01

    Surface addressable Photonic Crystal Membranes (PCM) are 1D or 2D photonic crystals formed in a slab waveguides where Bloch modes located above the light line are exploited. These modes are responsible for resonances in the reflection spectrum whose bandwidth can be adjusted at will. These resonances result from the coupling between a guided mode of the membrane and a free-space mode through the pattern of the photonic crystal. If broadband, these structures represent an ideal mirror to form compact vertical microcavity with 3D confinement of photons and polarization selectivity. Among numerous devices, low threshold VCSELs with remarkable and tunable modal properties have been demonstrated. Narrow band PCMs (or high Q resonators) have also been extensively used for surface addressable optoelectronic devices where an active material is embedded into the membrane, leading to the demonstration of low threshold surface emitting lasers, nonlinear bistables, optical traps... In this presentation, we will describe the main physical rules which govern the lifetime of photons in these resonant modes. More specifically, it will be emphasized that the Q factor of the PCM is determined, to the first order, by the integral overlap between the electromagnetic field distributions of the guided and free space modes and of the dielectric periodic perturbation which is applied to the homogeneous membrane to get the photonic crystal. It turns out that the symmetries of these distributions are of prime importance for the strength of the resonance. It will be shown that, by molding in-plane or vertical symmetries of Bloch modes, spectrally and spatially selective light absorbers or emitters can be designed. First proof of concept devices will be also presented.

  6. Adaptive Lighting

    DEFF Research Database (Denmark)

    Petersen, Kjell Yngve; Kongshaug, Jesper; Søndergaard, Karin

    2015-01-01

    offered by adaptive lighting control are created by the ways that the system components, the network and data flow can be coordinated through software so that the dynamic variations are controlled in ways that meaningfully adapt according to people’s situations and design intentions. This book discusses...... to be static, and no longer acts as a kind of spatial constancy maintaining stability and order? Moreover, what new potentials open in lighting design? This book is one of four books that is published in connection with the research project entitled LED Lighting; Interdisciplinary LED Lighting Research...

  7. Light scattering effect of ITO:Zr/AZO films deposited on periodic textured glass surface morphologies for silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Shahzada Qamar [Sungkyunkwan University, Department of Energy Science, Suwon (Korea, Republic of); COMSATS Institute of Information Technology, Department of Physics, Lahore (Pakistan); Kwon, Gi Duk; Kim, Sunbo; Balaji, Nagarajan; Shin, Chonghoon; Kim, Sangho; Khan, Shahbaz; Pribat, Didier [Sungkyunkwan University, Department of Energy Science, Suwon (Korea, Republic of); Ahn, Shihyun; Le, Anh Huy Tuan; Park, Hyeongsik; Raja, Jayapal; Lee, Youn-Jung [Sungkyunkwan University, College of Information and Communication Engineering, Suwon (Korea, Republic of); Razaq, Aamir [COMSATS Institute of Information Technology, Department of Physics, Lahore (Pakistan); Velumani, S. [Sungkyunkwan University, College of Information and Communication Engineering, Suwon (Korea, Republic of); Department of Electrical Engineering (SEES), Mexico City (Mexico); Yi, Junsin [Sungkyunkwan University, Department of Energy Science, Suwon (Korea, Republic of); Sungkyunkwan University, College of Information and Communication Engineering, Suwon (Korea, Republic of)

    2015-09-15

    Various SF{sub 6}/Ar plasma-textured periodic glass surface morphologies for high transmittance, haze ratio and low sheet resistance of ITO:Zr films are reported. The SF{sub 6}/Ar plasma-textured glass surface morphologies were changed from low aspect ratio to high aspect ratio with the increase in RF power from 500 to 600 W. The micro- and nano-size features of textured glass surface morphologies enhanced the haze ratio in visible as well as NIR wavelength region. Micro-size textured features also influenced the sheet resistance and electrical characteristics of ITO:Zr films due to step coverage. The ITO:Zr/AZO bilayer was used as front TCO electrode for p-i-n amorphous silicon thin film solar cells with current density-voltage characteristics as: V{sub oc} = 875 mV, FF = 70.90 %, J{sub sc} = 11.31 mA/cm{sup 2}, η = 7.02 %. (orig.)

  8. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  9. Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

    Science.gov (United States)

    Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-10-05

    A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

  10. Reaction analysis of initial oxidation of silicon by UV-light-excited ozone and the application to rapid and uniform SiO2 film growth

    International Nuclear Information System (INIS)

    Tosaka, Aki; Nonaka, Hidehiko; Ichimura, Shingo; Nishiguchi, Tetsuya

    2007-01-01

    UV-light-excited O 3 prepared by irradiation of nearly 100% pure O 3 with a KrF excimer laser (λ=248 nm, irradiated area=30x10 mm 2 ) was utilized for low-temperature Si oxidation. The initial oxidation rate was determined, and the activation energy was shown to be almost zero (0.049 eV). To clarify the optimum oxidation conditions, the dependence of the SiO 2 film growth rate on the total photon number and the photon density was investigated. The evolution of O 3 density after UV-light irradiation was experimentally measured, and the O( 1 D) density change is discussed. O( 1 D) density changes are successfully explained by using a second-order reaction model, indicating that a pulse supply of oxygen atoms is essential in the initial oxidation process. The uniform oxidation of 8 in. Si wafer has been carried out using a wafer-transfer type chamber by irradiating the wafer with KrF excimer laser light expanded linearly to the wafer width by a concave lens

  11. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  12. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  13. A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Trwoga, P.F.

    1998-01-01

    Silicon is the most studied electronic material known to man and dominates the electronics industry in its use as a semiconductors for nearly all integrated electronics. However, optoelectronics is almost entirely based on III-V materials. This technology is used because silicon is a very inefficient light source, whereas the III-V band structure can lend itself to efficient light emission by electron injection. However, due to the overwhelming dominance of silicon based electronics it is still a highly desirable goal to generate light efficiently from silicon based materials. Recently, studies have demonstrated that efficient visible luminescence can be obtained from certain novel forms of silicon. These materials include porous silicon, hydrogenated amorphous silicon, and silicon-rich silica (SiO x x x is studied in detail; in addition, electroluminescence and rare-earth doping of silicon-rich silica is also addressed. (author)

  14. Quantum confinement and disorder in porous silicon: effects on the optical and transport properties

    International Nuclear Information System (INIS)

    Amato, G.; Boarino, L.; Brunetto, N.; Rossi, A.M.

    1996-01-01

    In this report the authors report new optical data showing that disorder in porous silicon leads to strong carrier localisation. Light emission in PS (porous silicon) is suggested to occur through transitions involving localized states

  15. Molecular Chemical Structure of Barley Proteins Revealed by Ultra-Spatially Resolved Synchrotron Light Sourced FTIR Microspectroscopy: Comparison of Barley Varieties

    International Nuclear Information System (INIS)

    Yu, P.

    2007-01-01

    Barley protein structure affects the barley quality, fermentation, and degradation behavior in both humans and animals among other factors such as protein matrix. Publications show various biological differences among barley varieties such as Valier and Harrington, which have significantly different degradation behaviors. The objectives of this study were to reveal the molecular structure of barley protein, comparing various varieties (Dolly, Valier, Harrington, LP955, AC Metcalfe, and Sisler), and quantify protein structure profiles using Gaussian and Lorentzian methods of multi-component peak modeling by using the ultra-spatially resolved synchrotron light sourced Fourier transform infrared microspectroscopy (SFTIRM). The items of the protein molecular structure revealed included protein structure α-helices, β-sheets, and others such as β-turns and random coils. The experiment was performed at the National Synchrotron Light Source in Brookhaven National Laboratory (BNL, US Department of Energy, NY). The results showed that with the SFTIRM, the molecular structure of barley protein could be revealed. Barley protein structures exhibited significant differences among the varieties in terms of proportion and ratio of model-fitted α-helices, β-sheets, and others. By using multi-component peaks modeling at protein amide I region of 1710-1576 cm -1 , the results show that barley protein consisted of approximately 18-34% of α-helices, 14-25% of β-sheets, and 44-69% others. AC Metcalfe, Sisler, and LP955 consisted of higher (P 0.05). The ratio of α-helices to others (0.3 to 1.0, P < 0.05) and that of β-sheets to others (0.2 to 0.8, P < 0.05) were different among the barley varieties. It needs to be pointed out that using a multi-peak modeling for protein structure analysis is only for making relative estimates and not exact determinations and only for the comparison purpose between varieties. The principal component analysis showed that protein amide I Fourier

  16. Organic light emitting diode with light extracting layer

    Science.gov (United States)

    Lu, Songwei

    2016-06-14

    A light extraction substrate includes a glass substrate having a first surface and a second surface. A light extraction layer is formed on at least one of the surfaces. The light extraction layer is a coating, such as a silicon-containing coating, incorporating nanoparticles.

  17. 1.54 μm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

    International Nuclear Information System (INIS)

    Zhao, W Q; Wang, P F; Ran, G Z; Ma, G L; Zhang, B R; Liu, W M; Wu, S K; Dai, L; Qin, G G

    2006-01-01

    By doping an erbium complex, erbium (III) 2, 4-pentanedionate (Er(acac) 3 ), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO 2 /NPB/ALQ/ ALQ:Er(acac) 3 /ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 μm emission from Er 3+ is observed. The impact of doping level of Er(acac) 3 in ALQ on 1.54 μm electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac) 3 to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac) 3 is found and the Er 3+ ions excitations are attributed to energy transfer from the ligands to Er ions

  18. Large-scale quantum photonic circuits in silicon

    Directory of Open Access Journals (Sweden)

    Harris Nicholas C.

    2016-08-01

    Full Text Available Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3 of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.

  19. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Directory of Open Access Journals (Sweden)

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  20. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  1. USING COORDINATED OBSERVATIONS IN POLARIZED WHITE LIGHT AND FARADAY ROTATION TO PROBE THE SPATIAL POSITION AND MAGNETIC FIELD OF AN INTERPLANETARY SHEATH

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Ming; Feng, Xueshang; Liu, Ying D. [State Key Laboratory of Space Weather, Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing (China); Davies, Jackie A.; Harrison, Richard A. [Rutherford-Appleton Laboratory (RAL) Space, Harwell Oxford (United Kingdom); Owens, Mathew J.; Davis, Chris J., E-mail: mxiong@spacweather.ac.cn [Reading University, Reading (United Kingdom)

    2013-11-01

    Coronal mass ejections (CMEs) can be continuously tracked through a large portion of the inner heliosphere by direct imaging in visible and radio wavebands. White light (WL) signatures of solar wind transients, such as CMEs, result from Thomson scattering of sunlight by free electrons and therefore depend on both viewing geometry and electron density. The Faraday rotation (FR) of radio waves from extragalactic pulsars and quasars, which arises due to the presence of such solar wind features, depends on the line-of-sight magnetic field component B{sub ∥} and the electron density. To understand coordinated WL and FR observations of CMEs, we perform forward magnetohydrodynamic modeling of an Earth-directed shock and synthesize the signatures that would be remotely sensed at a number of widely distributed vantage points in the inner heliosphere. Removal of the background solar wind contribution reveals the shock-associated enhancements in WL and FR. While the efficiency of Thomson scattering depends on scattering angle, WL radiance I decreases with heliocentric distance r roughly according to the expression I∝r {sup –3}. The sheath region downstream of the Earth-directed shock is well viewed from the L4 and L5 Lagrangian points, demonstrating the benefits of these points in terms of space weather forecasting. The spatial position of the main scattering site r{sub sheath} and the mass of plasma at that position M{sub sheath} can be inferred from the polarization of the shock-associated enhancement in WL radiance. From the FR measurements, the local B{sub ∥sheath} at r{sub sheath} can then be estimated. Simultaneous observations in polarized WL and FR can not only be used to detect CMEs, but also to diagnose their plasma and magnetic field properties.

  2. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  3. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  4. Direct bandgap silicon: tensile-strained silicon nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Hapala, Prokop; Valenta, J.; Jelínek, Pavel; Cibulka, Ondřej; Ondič, Lukáš; Pelant, Ivan

    2014-01-01

    Roč. 1, č. 2 (2014), "1300042-1"-"1300042-9" ISSN 2196-7350 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235; GA ČR GAP204/10/0952 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * badstructure * light emission * direct bandgap * surface capping Subject RIV: BM - Solid Matter Physics ; Magnetism

  5. Analysis of photon statistics with Silicon Photomultiplier

    International Nuclear Information System (INIS)

    D'Ascenzo, N.; Saveliev, V.; Wang, L.; Xie, Q.

    2015-01-01

    The Silicon Photomultiplier (SiPM) is a novel silicon-based photodetector, which represents the modern perspective of low photon flux detection. The aim of this paper is to provide an introduction on the statistical analysis methods needed to understand and estimate in quantitative way the correct features and description of the response of the SiPM to a coherent source of light

  6. All silicon waveguide spherical microcavity coupler device.

    Science.gov (United States)

    Xifré-Pérez, E; Domenech, J D; Fenollosa, R; Muñoz, P; Capmany, J; Meseguer, F

    2011-02-14

    A coupler based on silicon spherical microcavities coupled to silicon waveguides for telecom wavelengths is presented. The light scattered by the microcavity is detected and analyzed as a function of the wavelength. The transmittance signal through the waveguide is strongly attenuated (up to 25 dB) at wavelengths corresponding to the Mie resonances of the microcavity. The coupling between the microcavity and the waveguide is experimentally demonstrated and theoretically modeled with the help of FDTD calculations.

  7. CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

    Directory of Open Access Journals (Sweden)

    V. А. Pilipenko

    2017-01-01

    Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

  8. X-ray excited optical luminescence (XEOL) and its application to porous silicon

    International Nuclear Information System (INIS)

    Hill, D.A.

    1998-09-01

    X-ray Excited Optical Luminescence (XEOL) is investigated as a local structural probe of the light-emitting sites in porous silicon. A detailed microscopic model of the XEOL process in porous silicon is proposed. A central aspect of the technique is an assessment of the spatial separation between the primary photoionisation event and subsequent optical radiative recombination. By constructing a Monte Carlo simulation of hot electron propagation in silicon using both elastic and inelastic scattering cross-sections, the mean minimum range of luminescence excitation can be calculated. This range is estimated as 546±1A for the silicon K-edge (∼ 1839eV), but is reduced to 8.9±0.1A for the silicon L 2,3 -edge (∼ 99eV). From known porous silicon properties, it is concluded that this mean minimum range is comparable to the actual range of excitation. Hence, more localised structural information may be obtained from L 2,3 -edge XEOL measurements. This important difference between the two spectra has been neglected in previous studies. Simultaneous measurements of the XEOL and total electron yield (TEY) x-ray absorption spectra (XAS) have been conducted at both the silicon K-edge and L 2,3 -edge for various porous silicon samples and related materials. Measurements have been conducted at the Si K-edge on a rapid thermally oxidised (RTO) porous silicon sample. XEOL spectra yield two distinct luminescence bands in the visible region. From multi-bunch wavelength-selective XEOL measurements, it is concluded that there are blue luminescent defective silica sites together with a red luminescent site originating from silicon-like material. The spectral time decay curve under pulsed x-ray excitation gives two distinct decay components; one fast in the range of a few nanoseconds and the other slow in the range of microseconds. Time-resolved XEOL measurements in single-bunch mode show that the fast band mirrors the blue wavelength XEOL whereas the slow band correlates with the

  9. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  10. Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging

    Directory of Open Access Journals (Sweden)

    Jan Schmidt

    2007-01-01

    Full Text Available This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discuss—in more detail—the technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.

  11. Atomic and electronic structures of novel silicon surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.H. Jr.

    1997-03-01

    The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

  12. Effect of γ irradiation on the photoluminescence kinetics of porous silicon

    International Nuclear Information System (INIS)

    Agekyan, V.F.; Stepanov, Yu.A.; Emtsev, V.V.; Lebedev, A.A.; Poloskin, D.S.; Remenyuk, A.D.

    1999-01-01

    The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time

  13. An analog silicon retina with multichip configuration.

    Science.gov (United States)

    Kameda, Seiji; Yagi, Tetsuya

    2006-01-01

    The neuromorphic silicon retina is a novel analog very large scale integrated circuit that emulates the structure and the function of the retinal neuronal circuit. We fabricated a neuromorphic silicon retina, in which sample/hold circuits were embedded to generate fluctuation-suppressed outputs in the previous study [1]. The applications of this silicon retina, however, are limited because of a low spatial resolution and computational variability. In this paper, we have fabricated a multichip silicon retina in which the functional network circuits are divided into two chips: the photoreceptor network chip (P chip) and the horizontal cell network chip (H chip). The output images of the P chip are transferred to the H chip with analog voltages through the line-parallel transfer bus. The sample/hold circuits embedded in the P and H chips compensate for the pattern noise generated on the circuits, including the analog communication pathway. Using the multichip silicon retina together with an off-chip differential amplifier, spatial filtering of the image with an odd- and an even-symmetric orientation selective receptive fields was carried out in real time. The analog data transfer method in the present multichip silicon retina is useful to design analog neuromorphic multichip systems that mimic the hierarchical structure of neuronal networks in the visual system.

  14. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  15. Adaptive Generation and Diagnostics of Linear Few-Cycle Light Bullets

    Directory of Open Access Journals (Sweden)

    Martin Bock

    2013-02-01

    Full Text Available Recently we introduced the class of highly localized wavepackets (HLWs as a generalization of optical Bessel-like needle beams. Here we report on the progress in this field. In contrast to pulsed Bessel beams and Airy beams, ultrashort-pulsed HLWs propagate with high stability in both spatial and temporal domain, are nearly paraxial (supercollimated, have fringe-less spatial profiles and thus represent the best possible approximation to linear “light bullets”. Like Bessel beams and Airy beams, HLWs show self-reconstructing behavior. Adaptive HLWs can be shaped by ultraflat three-dimensional phase profiles (generalized axicons which are programmed via calibrated grayscale maps of liquid-crystal-on-silicon spatial light modulators (LCoS-SLMs. Light bullets of even higher complexity can either be freely formed from quasi-continuous phase maps or discretely composed from addressable arrays of identical nondiffracting beams. The characterization of few-cycle light bullets requires spatially resolved measuring techniques. In our experiments, wavefront, pulse and phase were detected with a Shack-Hartmann wavefront sensor, 2D-autocorrelation and spectral phase interferometry for direct electric-field reconstruction (SPIDER. The combination of the unique propagation properties of light bullets with the flexibility of adaptive optics opens new prospects for applications of structured light like optical tweezers, microscopy, data transfer and storage, laser fusion, plasmon control or nonlinear spectroscopy.

  16. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  17. The LHCb Silicon Inner Tracker

    International Nuclear Information System (INIS)

    Sievers, P.

    2002-01-01

    A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

  18. Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1997-01-01

    Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

  19. Excimer laser decomposition of silicone

    International Nuclear Information System (INIS)

    Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

    2003-01-01

    Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

  20. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  1. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  2. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  3. Hydrothermal deposition and characterization of silicon oxide nanospheres

    International Nuclear Information System (INIS)

    Pei, L.Z.

    2008-01-01

    Silicon oxide nanospheres with the average diameter of about 100 nm have been synthesized by hydrothermal deposition process using silicon and silica as the starting materials. The silicon oxide nanospheres were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectrum, respectively. The results show that large scale silicon oxide nanospheres with the uniform size are composed of Si and O showing the amorphous structure. Strong PL peak at 435 nm is observed demonstrating the good blue light emission property

  4. First results of systematic studies done with silicon photomultipliers

    International Nuclear Information System (INIS)

    Bosio, C.; Gentile, S.; Kuznetsova, E.; Meddi, F.

    2008-01-01

    Multicell avalanche photodiode structure operated in Geiger mode usually referred as silicon photomultiplier is a new intensively developing technology for photon detection. Insensitivity to magnetic fields, low operation voltage and small size make silicon photomultipliers very attractive for high-energy physics, astrophysics and medical applications. The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse samples of silicon photomultipliers available on market. The response to low-intensity light was studied for silicon photomultipliers produced by CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).

  5. Synchrotron X-ray imaging applied to solar photovoltaic silicon

    International Nuclear Information System (INIS)

    Lafford, T A; Villanova, J; Plassat, N; Dubois, S; Camel, D

    2013-01-01

    Photovoltaic (PV) cell performance is dictated by the material of the cell, its quality and purity, the type, quantity, size and distribution of defects, as well as surface treatments, deposited layers and contacts. A synchrotron offers unique opportunities for a variety of complementary X-ray techniques, given the brilliance, spectrum, energy tunability and potential for (sub-) micron-sized beams. Material properties are revealed within in the bulk and at surfaces and interfaces. X-ray Diffraction Imaging (X-ray Topography), Rocking Curve Imaging and Section Topography reveal defects such as dislocations, inclusions, misorientations and strain in the bulk and at surfaces. Simultaneous measurement of micro-X-Ray Fluorescence (μ-XRF) and micro-X-ray Beam Induced Current (μ-XBIC) gives direct correlation between impurities and PV performance. Together with techniques such as microscopy and Light Beam Induced Current (LBIC) measurements, the correlation between structural properties and photovoltaic performance can be deduced, as well as the relative influence of parameters such as defect type, size, spatial distribution and density (e.g [1]). Measurements may be applied at different stages of solar cell processing in order to follow the evolution of the material and its properties through the manufacturing process. Various grades of silicon are under study, including electronic and metallurgical grades in mono-crystalline, multi-crystalline and mono-like forms. This paper aims to introduce synchrotron imaging to non-specialists, giving example results on selected solar photovoltaic silicon samples.

  6. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  7. Full-color OLED on silicon microdisplay

    Science.gov (United States)

    Ghosh, Amalkumar P.

    2002-02-01

    eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

  8. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-01-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  9. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  10. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  11. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

    Science.gov (United States)

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

    2014-11-01

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

  12. Silicon Nano wires with MoS_x and Pt as Electrocatalysts for Hydrogen Evolution Reaction

    International Nuclear Information System (INIS)

    Hsieh, S.H.; Ho, S.T.; Chen, W.J.

    2016-01-01

    A convenient method was used for synthesizing Pt-nanoparticle//silicon nano wires nano composites. Obtained Pt-/silicon nano wires electrocatalysts were characterized by transmission electron microscopy (TEM). The hydrogen evolution reaction efficiency of the Pt-/silicon nano wire nano composite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-/silicon nano wire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-/silicon nano wires is also comparable to /silicon nano wires and Pt/silicon nano wires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-/silicon nano wires can be attributed to the fast electron transfer between Pt-/silicon nano wire electrodes and electrolyte interfaces.

  13. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  14. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  15. New dynamic silicon photonic components enabled by MEMS technology

    Science.gov (United States)

    Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

    2018-02-01

    Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

  16. Correlation between surface microstructure and optical properties of porous silicon

    Directory of Open Access Journals (Sweden)

    Saeideh Rhramezani Sani

    2007-12-01

    Full Text Available   We have studied the effect of increasing porosity and its microstructure surface variation on the optical and dielectric properties of porous silicon. It seems that porosity, as the surface roughness within the range of a few microns, shows quantum effect in the absorption and reflection process of porous silicon. Optical constants of porous silicon at normal incidence of light with wavelength in the range of 250-3000 nm have been calculated by Kramers-Kroning method. Our experimental analysis shows that electronic structure and dielectric properties of porous silicon are totally different from silicon. Also, it shows that porous silicon has optical response in the visible region. This difference was also verified by effective media approximation (EMA.

  17. Nanostructured silicon for photonics from materials to devices

    CERN Document Server

    Gaburro, Z; Daldosso, N

    2006-01-01

    The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of elec

  18. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  19. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  20. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared