WorldWideScience

Sample records for silicon oxide layer

  1. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  2. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Oxide layers for silicon detector protection against enviroment effects

    International Nuclear Information System (INIS)

    Bel'tsazh, E.; Brylovska, I.; Valerian, M.

    1986-01-01

    It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

  4. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  5. Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

    Science.gov (United States)

    Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-02-01

    In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

  6. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  7. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  8. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  9. Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

    CERN Document Server

    Baraban, A P

    2002-01-01

    One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

  10. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  11. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  12. Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

    International Nuclear Information System (INIS)

    Badawy, Waheed A.

    2008-01-01

    Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

  13. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  14. Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

    International Nuclear Information System (INIS)

    Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

    1998-01-01

    Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

  15. The effect of oxidation on physical properties of porous silicon layers for optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

    2006-12-15

    In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

  16. Designing high performance precursors for atomic layer deposition of silicon oxide

    Energy Technology Data Exchange (ETDEWEB)

    Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  17. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  18. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  19. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  20. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  1. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  2. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

    2013-04-15

    Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

  3. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  4. Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

    International Nuclear Information System (INIS)

    Bietti, S; Somaschini, C; Esposito, L; Sanguinetti, S; Frigeri, C; Fedorov, A; Geelhaar, L

    2014-01-01

    We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (paper)

  5. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    KAUST Repository

    Werner, Jérémie

    2016-12-05

    Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)

  6. Barrier layer arrangement for conductive layers on silicon substrates

    International Nuclear Information System (INIS)

    Hung, L.S.; Agostinelli, J.A.

    1990-01-01

    This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide

  7. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  8. Strong and reversible modulation of carbon nanotube-silicon heterojunction solar cells by an interfacial oxide layer.

    Science.gov (United States)

    Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai

    2012-06-21

    Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.

  9. Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

    International Nuclear Information System (INIS)

    El-Dessouki, M.S.; Galloni, R.

    1987-10-01

    Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

  10. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  11. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

    International Nuclear Information System (INIS)

    Tinoco, J.C.; Estrada, M.; Baez, H.; Cerdeira, A.

    2006-01-01

    In this paper we present basic features and oxidation law of the room temperature plasma oxidation (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO 2 , and high-k layers of TiO 2 . We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO 2 layers with surface roughness similar to thermal oxide films, surface state density below 3 x 10 11 cm -2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm 2 and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O 2 and N 2 O as reactive gases. MOS capacitors with TiO 2 layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO 2 over SiO 2 , both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO 2 as a candidate for next technology nodes

  12. Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

    Science.gov (United States)

    Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Yu Yu; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Strugovshchikov, E.; Mamedov, D.; Pishtshev, A.; Karazhanov, S. Zh

    2018-05-01

    We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma flux expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and a SiO2/Si (0 0 1) sample. The laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with a YAG:Nd3  +  laser having a pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. The depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of x-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy methods. Analysis of the chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on the local concentration of thorium atoms, the experimentally established band gaps were located in the range 6.0–9.0 eV. Theoretical studies of the optical properties of the SiO2 and ThO2 crystalline systems were performed by ab initio calculations within hybrid functional. The optical properties of the SiO2/ThO2 composite were interpreted on the basis of the Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in ‘hot’ laser plasma at the early stages of expansion was performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in a 229Th isotope with energy of 7.8 +/- 0.5 eV.

  13. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  14. Formation and electrical characteristics of silicon dioxide layers by use of nitric acid oxidation method

    International Nuclear Information System (INIS)

    Imal, S.; Takahashi, M.; Matsuba, K.; Asuha; Ishikawa, Y.; Kobayashi, Hikaru

    2005-01-01

    SiO 2 /Si structure can be formed at low temperatures by use of nitric acid (HNO 3 ) oxidation of Si (NAOS) method. When Si wafers are immersed in ∼ 40 wt% HNO 3 solutions at 108 deg C, ∼ 1 nm SiO 2 layers are formed. The subsequent immersion in 68 wt% HNO 3 (i.e., azeotropic mixture of HNO 3 with water) at 121 deg C increases the SiO 2 thickness. The 3,5 nm-thick SiO 2 layers produced by this two-step NAOS method possess a considerably low leakage current density (e.g. 1 x 10 2 A/cmi 2 at the forward gate bias, V G , of 1.5 V), in spite of the low temperature oxidation, and further decreased (e.g., 8 x 10 4 A/cm 2 at V G = 1.5 V) by post-metallization annealing at 250 deg C in hydrogen atmosphere. In order to increase the SiO 2 thickness, a bias voltage is applied during the NAOS method. When 10 V is applied to Si with respect to a Pt counter electrode both immersed in 1 M HNO 3 solutions at 25 deg C, SiO 2 layers with 8 nm thickness can be formed for 1 h(Authors)

  15. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  16. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  17. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  18. Atomic layer deposited ZnO:B as transparent conductive oxide for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Gatz, H.A.; Koushik, D.; Rath, J.K.; Kessels, W.M.M.; Schropp, R.E.I.

    A key factor to improve the performance of silicon heterojunction solar cells (SHJ) is increasing their short circuit density (Jsc) by reducing the parasitic absorption of light in the front side of the cell. Therefore, we have investigated the replacement of the conventional sputtered ITO on the

  19. Ultra-high temperature oxidation behavior of chemical vapor deposited silicon carbide layers

    International Nuclear Information System (INIS)

    Goto, Takashi

    2003-01-01

    The active oxidation, passive oxidation and bubble formation of CVD SiC were studied in O 2 and CO 2 at temperatures from 1650 to 2000 K. The active oxidation rates in O 2 increased with increasing oxygen partial pressure (P o2 ); however, those in CO 2 showed the maxima at specific P o2 . The passive oxidation kinetics in O 2 were either linear-parabolic or parabolic depending on temperature and P o2 , whereas that in CO 2 was always parabolic. The activation energies for the parabolic oxidation in O 2 and CO 2 were 210 and 150 kJ/mol, respectively, suggesting different rate-determining process between these atmospheres. The bubble formation was controlled by temperature and P o2 being independent of oxidant gas species. (author)

  20. Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

    International Nuclear Information System (INIS)

    Oude Elferink, J.B.

    1989-01-01

    In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

  1. Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

    Science.gov (United States)

    An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

    2015-09-01

    Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

  2. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  3. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

    Energy Technology Data Exchange (ETDEWEB)

    Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

    2017-02-15

    Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

  4. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

    KAUST Repository

    Werner, Jé ré mie; Walter, Arnaud; Rucavado, Esteban; Moon, Soo Jin; Sacchetto, Davide; Rienaecker, Michael; Peibst, Robby; Brendel, Rolf; Niquille, Xavier; De Wolf, Stefaan; Lö per, Philipp; Morales-Masis, Monica; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

    2016-01-01

    the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem

  5. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Science.gov (United States)

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  6. The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

    Directory of Open Access Journals (Sweden)

    Kulinich O. A.

    2008-10-01

    Full Text Available The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.

  7. Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun; Sun Jian; Ni Jian; Zhao Ying

    2011-01-01

    Indium doped zinc oxide (ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10 −3 Ω·cm and particle grains. The double-layers structure is designed to fabricate the ZnO:In thin film with low resistivity (2.58×10 −3 Ω·cm) and good surface morphology. It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substrate-layer, and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film. Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region. Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. High-density oxidized porous silicon

    International Nuclear Information System (INIS)

    Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

    2012-01-01

    We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

  9. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  10. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  11. Contribution to the study of low-energy X-ray-induced degradations on the oxide-silicon interfacial transition layer of MOS structures

    International Nuclear Information System (INIS)

    Boukabache, Ali

    1983-01-01

    The Si-SiO_2 interface is considered as a transition layer. Its thickness is typically about 10 A. It contains traps which exchange charges with silicon by a tunneling mechanism. Its influence on MOS capacitor, gate-controlled diode and MOS transistor is analyzed. Long channel MOST's (P-Substrate) are irradiated with low energy X-ray (between 0 and 240 Krads) in order to validate the model. Capacitance, recombination velocity and 1/f noise measurements indicate that the X- ray induce traps distributed in space and in energy. These traps provoke a decrease in mobility. Additionally, X-rays create a fixed oxide charge which induce a shift in the characteristics of MOS structures. Finally, under irradiation the behaviour of the gate-controlled diode and the MOS capacitor are in accordance with theoretical model of the interfacial layer. The overall noise behaviour cannot be explained by existing theoretical models. (author) [fr

  12. Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature

    International Nuclear Information System (INIS)

    Tsuji, Hiroshi; Arai, Nobutoshi; Matsumoto, Takuya; Ueno, Kazuya; Gotoh, Yasuhito; Adachi, Kouichiro; Kotaki, Hiroshi; Ishikawa, Junzo

    2004-01-01

    Formation of silver nanoparticles formed by silver negative-ion implantation in a thin SiO 2 layer and its I-V characteristics were investigated for development single electron devices. In order to obtain effective Coulomb blockade phenomenon at room temperature, the isolated metal nanoparticles should be in very small size and be formed in a thin insulator layer such as gate oxide on the silicon substrate. Therefore, conditions of a fine particles size, high particle density and narrow distribution should be controlled at their formation without any electrical breakdown of the thin insulator layer. We have used a negative-ion implantation technique with an advantage of 'charge-up free' for insulators, with which no breakdown of thin oxide layer on Si was obtained. In the I-V characteristics with Au electrode, the current steps were observed with a voltage interval of about 0.12 V. From the step voltage the corresponded capacitance was calculated to be 0.7 aF. In one nanoparticle system, this value of capacitance could be given by a nanoparticle of about 3 nm in diameter. This consideration is consistent to the measured particle size in the cross-sectional TEM observation. Therefore, the observed I-V characteristics with steps are considered to be Coulomb staircase by the Ag nanoparticles

  13. Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

    International Nuclear Information System (INIS)

    Liu Junfu; Nistorica, Corina; Gory, Igor; Skidmore, George; Mantiziba, Fadziso M.; Gnade, Bruce E.

    2005-01-01

    This work reports layer-by-layer deposition of zirconium oxide on a Si surface from aqueous solutions using the successive ionic layer adsorption and reaction technique. The process consists of repeated cycles of adsorption of zirconium precursors, water rinse, and hydrolysis. The film composition was determined by X-ray photoelectron spectroscopy. The film thickness was determined by Rutherford backscattering spectrometry, by measuring the Zr atom concentration. The average deposition rate from a 0.1 M Zr(SO 4 ) 2 solution on a SiO 2 /Si surface is 0.62 nm per cycle. Increasing the acidity of the zirconium precursor solution inhibits the deposition of the zirconium oxide film. Atomic force microscopy shows that the zirconium oxide film consists of nanoparticles of 10-50 nm in the lateral dimension. The surface roughness increased with increasing number of deposition cycles. Friction measurements made with a microelectromechanical system device reveal a reduction of 45% in the friction coefficient of zirconium oxide-coated surfaces vs. uncoated surfaces in air

  14. What Governs Friction of Silicon Oxide in Humid Environment: Contact Area between Solids, Water Meniscus around the Contact, or Water Layer Structure?

    Science.gov (United States)

    Chen, Lei; Xiao, Chen; Yu, Bingjun; Kim, Seong H; Qian, Linmao

    2017-09-26

    In order to understand the interfacial parameters governing the friction force (F t ) between silicon oxide surfaces in humid environment, the sliding speed (v) and relative humidity (RH) dependences of F t were measured for a silica sphere (1 μm radius) sliding on a silicon oxide (SiO x ) surface, using atomic force microscopy (AFM), and analyzed with a mathematical model describing interfacial contacts under a dynamic condition. Generally, F t decreases logarithmically with increasing v to a cutoff value below which its dependence on interfacial chemistry and sliding condition is relatively weak. Above the cutoff value, the logarithmic v dependence could be divided into two regimes: (i) when RH is lower than 50%, F t is a function of both v and RH; (ii) in contrast, at RH ≥ 50%, F t is a function of v only, but not RH. These complicated v and RH dependences were hypothesized to originate from the structure of the water layer adsorbed on the surface and the water meniscus around the annulus of the contact area. This hypothesis was tested by analyzing F t as a function of the water meniscus area (A m ) and volume (V m ) estimated from a thermally activated water-bridge formation model. Surprisingly, it was found that F t varies linearly with V m and correlates poorly with A m at RH contact under ambient conditions.

  15. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  16. AFM investigation of effect of absorbed water layer structure on growth mechanism of octadecyltrichlorosilane self-assembled monolayer on oxidized silicon

    International Nuclear Information System (INIS)

    Li, Shaowei; Zheng, Yanjun; Chen, Changfeng

    2016-01-01

    The growth mechanism of an octadecyltrichlorosilane (OTS) self-assembled monolayer on a silicon oxide surface at various relative humidities has been investigated. Atomic force microscopy images show that excess water may actually hinder the nucleation and growth of OTS islands. A moderate amount of water is favorable for the nucleation and growth of OTS islands in the initial stage; however, the completion of the monolayer is very slow in the final stage. The growth of OTS islands on a low-water-content surface maintains a relatively constant speed and requires the least amount of time. The mobility of water molecules is thought to play an important role in the OTS monolayers, and a low-mobility water layer provides a steady condition for OTS monolayer growth.

  17. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    Energy Technology Data Exchange (ETDEWEB)

    Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

    2017-01-15

    The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

  18. Oxidation of ultra low carbon and silicon bearing steels

    Energy Technology Data Exchange (ETDEWEB)

    Suarez, Lucia [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: lucia.suarez@ctm.com.es; Rodriguez-Calvillo, Pablo [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: pablo.rodriguez@ctm.com.es; Houbaert, Yvan [Department of Materials Science and Engineering, University of Ghent (Belgium)], E-mail: Yvan.Houbaert@UGent.be; Colas, Rafael [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)], E-mail: rcolas@mail.uanl.mx

    2010-06-15

    Oxidation tests were carried out in samples from an ultra low carbon and two silicon bearing steels to determine the distribution and morphology of the oxide species present. The ultra low carbon steel was oxidized for short periods of time within a chamber designed to obtain thin oxide layers by controlling the atmosphere, and for longer times in an electric furnace; the silicon steels were reheated only in the electric furnace. The chamber was constructed to study the behaviour encountered during the short period of time between descaling and rolling in modern continuous mills. It was found that the oxide layers formed on the samples reheated in the electric furnace were made of different oxide species. The specimens treated in the chamber had layers made almost exclusively of wustite. Selected oxide samples were studied by scanning electron microscopy to obtain electron backscattered diffraction patterns, which were used to identify the oxide species in the layer.

  19. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  20. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  1. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  2. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  4. Hopping absorption edge in silicon inversion layers

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1983-09-01

    The low frequency gap observed in the absorption spectrum of silicon inversion layers is related to the AC variable range hopping. The frequency dependence of the absorption coefficient is calculated. (author)

  5. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  6. UV radiation hardness of silicon inversion layer solar cells

    International Nuclear Information System (INIS)

    Hezel, R.

    1990-01-01

    For full utilization of the high spectral response of inversion layer solar cells in the very-short-wavelength range of the solar spectrum sufficient ultraviolet-radiation hardness is required. In addition to the charge-induced passivation achieved by cesium incorporation into the silicon nitride AR coating, in this paper the following means for further drastic reduction of UV light-induced effects in inversion layer solar cells without encapsulation are introduced and interpretations are given: increasing the nitride deposition temperature, silicon surface oxidation at low temperatures, and texture etching and using higher substrate resistivities. High UV radiation tolerance and improvement of the cell efficiency could be obtained simultaneously

  7. Formation and properties of porous silicon layers

    International Nuclear Information System (INIS)

    Vitanov, P.; Kamenova, M.; Dimova-Malinovska, D.

    1993-01-01

    Preparation, properties and application of porous silicon films are investigated. Porous silicon structures were formed by an electrochemical etching process resulting in selective dissolution of the silicon substrate. The silicon wafers used with a resistivity of 5-10Ω.cm were doped with B to concentrations 6x10 18 -1x10 19 Ω.cm -3 in the temperature region 950 o C-1050 o C. The density of each porous films was determined from the weight loss during the anodization and it depends on the surface resistivity of the Si wafer. The density decreases with decreasing of the surface resistivity. The surface of the porous silicon layers was studied by X-ray photoelectron spectroscopy which indicates the presence of SiF 4 . The kinetic dependence of the anode potential and the porous layer thickness on the time of anodization in a galvanostatic regime for the electrolytes with various HF concentration were studied. In order to compare the properties of the resulting porous layers and to establish the dependence of the porosity on the electrolyte, three types of electrolytes were used: concentrated HF, diluted HF:H 2 O=1:1 and ethanol-hydrofluoric solutions HF:C 2 H 5 OH:H 2 O=2:1:1. High quality uniform and reproducible layers were formed using aqueous-ethanol-hydrofluoric electrolyte. Both Kikuchi's line and ring patterns were observed by TEM. The porous silicon layer was single crystal with the same orientation as the substrate. The surface shows a polycrystalline structure only. The porous silicon layers exhibit visible photoluminescence (PL) at room temperature under 480 nm Ar + laser line excitation. The peak of PL was observed at about 730 nm with FWHM about 90 nm. Photodiodes was made with a W-porous silicon junction. The current voltage and capacity voltage characteristics were similar to those of an isotype heterojunction diode. (orig.)

  8. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  9. Electrochemical impedance spectroscopy of oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Tiddia, Maria V. [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d' Armi, 09126 Cagliari (Italy)

    2014-04-01

    We present a study of the electrochemical oxidation process of porous silicon. We analyze the effect of the layer thickness (1.25–22 μm) and of the applied current density (1.1–11.1 mA/cm{sup 2}, values calculated with reference to the external samples surface) on the oxidation process by comparing the galvanostatic electrochemical impedance spectroscopy (EIS) measurements and the optical specular reflectivity of the samples. The results of EIS were interpreted using an equivalent circuit to separate the contribution of different sample parts. A different behavior of the electrochemical oxidation process has been found for thin and thick samples: whereas for thin samples the oxidation process is univocally related to current density and thickness, for thicker samples this is no more true. Measurements by Energy Dispersive Spectroscopy using a Scanning Electron Microscopy confirmed that the inhomogeneity of the electrochemical oxidation process is increased by higher thicknesses and higher currents. A possible explanation is proposed to justify the different behavior of thin and thick samples during the electrochemical process. - Highlights: • A multidisciplinary approach on porous Si electrochemical oxidation is proposed. • Electrochemical, optical, and structural characterizations are used. • Layer thickness and oxidation current effects are shown. • An explanation of the observed behavior is proposed.

  10. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

    International Nuclear Information System (INIS)

    Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

    2002-01-01

    In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

  11. High-temperature oxidation of silicide-aluminide layer on the TiAl6V4 alloy prepared by liquid-phase siliconizing

    Czech Academy of Sciences Publication Activity Database

    Kubatík, Tomáš František

    2016-01-01

    Roč. 50, č. 2 (2016), s. 257-261 ISSN 1580-2949 Institutional support: RVO:61389021 Keywords : TiAl6V4 * silicides * high-temperature oxidation * liquid-phase silicon izing Subject RIV: JG - Metallurgy Impact factor: 0.436, year: 2016

  12. Field effect of fixed negative charges on oxidized silicon induced by AlF3 layers with fluorine deficiency

    International Nuclear Information System (INIS)

    Koenig, D.; Zahn, D.R.T.; Ebest, G.

    2004-01-01

    We recently discovered that in an AlF 3 /SiO 2 /Si structure extrinsic electrons are trapped at fluorine (F) vacancies in AlF 3 at the interface with SiO 2 , generating a high sheet density of fixed negative charges. p- and n-Type Si substrates were oxidized using rapid thermal oxidation (RTO) or furnace oxidation (th); some samples were passivated in hydrogen (H 2 ). AlF 3 was deposited onto oxidized Si wafers by a modified PVD process, leading to a F deficiency (AlF x ). Samples were characterized by mercury probe (Hg) CV and microwave photo conduction decay (μW-PCD), determining charge and trap densities and effective carrier lifetime τ eff , respectively. An effective charge density of up to |Q eff = -6.9 x 10 12 cm -2 is reached due to electrons tunneling from Si into AlF 3 , occupying F vacancies. Lifetime scans of p-type float zone (FZ) Si samples with 1.5 nm RTO and 20 nm AlF 3 show an increase in effective minority carrier lifetime by a factor of 8.4 compared to samples with 1.5 nm RTO only. The fixed negative charge density increases with exposure time to sunlight or at simulated ageing by a 24 h anneal at 200 deg. C in air

  13. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  14. Study of oxide facing at silicone detectors of ionization detectors

    International Nuclear Information System (INIS)

    Kopestansky, J.; Tykva, R.

    1999-01-01

    Formation of oxide facing on silicone in discrete phases of technological preparation of detectors and interaction of gold (aluminium) steamed with SiO x layer were studied. The homogeneity of Au and Si) x layers and interface Au-SiO x and SiO x -Si were examined. The methods SIMS, and partially XPS, AES and RBS were used

  15. Protective silicon coating for nanodiamonds using atomic layer deposition

    International Nuclear Information System (INIS)

    Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

    2007-01-01

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

  16. Protective silicon coating for nanodiamonds using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

    2007-01-30

    Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

  17. Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Carriere, B.; Deville, J.P.; El Maachi, A.

    1987-06-01

    The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

  18. Oxidation of mullite-zirconia-alumina-silicon carbide composites

    International Nuclear Information System (INIS)

    Baudin, C.; Moya, J.S.

    1990-01-01

    This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

  19. Catalytic oxidation of silicon by cesium ion bombardment

    International Nuclear Information System (INIS)

    Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

    1991-01-01

    Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

  20. Electrical behavior of free-standing porous silicon layers

    International Nuclear Information System (INIS)

    Bazrafkan, I.; Dariani, R.S.

    2009-01-01

    The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

  1. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie; Dré on, Julie; Rucavado, Esteban; Mews, Mathias; Koida, Takashi; Boccard, Mathieu; Werner, Jé ré mie; Geissbü hler, Jonas; Lö per, Philipp; Morales-Masis, Monica; Korte, Lars; De Wolf, Stefaan; Balllif, Christophe

    2018-01-01

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient

  2. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  3. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  4. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  5. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  6. Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1980-01-01

    Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

  7. Subsurface oxidation for micropatterning silicon (SOMS).

    Science.gov (United States)

    Zhang, Feng; Sautter, Ken; Davis, Robert C; Linford, Matthew R

    2009-02-03

    Here we present a straightforward patterning technique for silicon: subsurface oxidation for micropatterning silicon (SOMS). In this method, a stencil mask is placed above a silicon surface. Radio-frequency plasma oxidation of the substrate creates a pattern of thicker oxide in the exposed regions. Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon, respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy. The oxidation process itself is studied under a variety of reaction conditions, including higher and lower oxygen pressures (2 and 0.5 Torr), a variety of powers (50-400 W), different times and as a function of reagent purity (99.5 or 99.994% oxygen). SOMS can be easily executed in any normal chemistry laboratory with a plasma generator. Because of its simplicity, it may have industrial viability.

  8. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    International Nuclear Information System (INIS)

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I.; Bondarenko, V. P.; Ishikawa, Y.

    2011-01-01

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550°C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  9. Layered structure in core–shell silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

    2014-10-15

    Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

  10. Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

    CERN Document Server

    Askinazi, A Y; Miloglyadova, L V

    2002-01-01

    One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

  11. Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

    Science.gov (United States)

    Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

    2013-04-01

    In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

  12. Substrate and p-layer effects on polymorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Abolmasov S.N.

    2014-07-01

    Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

  13. Field oxide radiation damage measurements in silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

    1993-04-01

    Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

  14. Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

    OpenAIRE

    Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

    2015-01-01

    A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

  15. Broadband dielectric spectroscopy of oxidized porous silicon

    International Nuclear Information System (INIS)

    Axelrod, Ekaterina; Urbach, Benayahu; Sa'ar, Amir; Feldman, Yuri

    2006-01-01

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals

  16. Broadband dielectric spectroscopy of oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Axelrod, Ekaterina [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Urbach, Benayahu [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Sa' ar, Amir [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Feldman, Yuri [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel)

    2006-04-07

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals.

  17. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

  18. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  19. Boosting water oxidation layer-by-layer.

    Science.gov (United States)

    Hidalgo-Acosta, Jonnathan C; Scanlon, Micheál D; Méndez, Manuel A; Amstutz, Véronique; Vrubel, Heron; Opallo, Marcin; Girault, Hubert H

    2016-04-07

    Electrocatalysis of water oxidation was achieved using fluorinated tin oxide (FTO) electrodes modified with layer-by-layer deposited films consisting of bilayers of negatively charged citrate-stabilized IrO2 NPs and positively charged poly(diallyldimethylammonium chloride) (PDDA) polymer. The IrO2 NP surface coverage can be fine-tuned by controlling the number of bilayers. The IrO2 NP films were amorphous, with the NPs therein being well-dispersed and retaining their as-synthesized shape and sizes. UV/vis spectroscopic and spectro-electrochemical studies confirmed that the total surface coverage and electrochemically addressable surface coverage of IrO2 NPs increased linearly with the number of bilayers up to 10 bilayers. The voltammetry of the modified electrode was that of hydrous iridium oxide films (HIROFs) with an observed super-Nernstian pH response of the Ir(III)/Ir(IV) and Ir(IV)-Ir(IV)/Ir(IV)-Ir(V) redox transitions and Nernstian shift of the oxygen evolution onset potential. The overpotential of the oxygen evolution reaction (OER) was essentially pH independent, varying only from 0.22 V to 0.28 V (at a current density of 0.1 mA cm(-2)), moving from acidic to alkaline conditions. Bulk electrolysis experiments revealed that the IrO2/PDDA films were stable and adherent under acidic and neutral conditions but degraded in alkaline solutions. Oxygen was evolved with Faradaic efficiencies approaching 100% under acidic (pH 1) and neutral (pH 7) conditions, and 88% in alkaline solutions (pH 13). This layer-by-layer approach forms the basis of future large-scale OER electrode development using ink-jet printing technology.

  20. Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1997-01-01

    Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

  1. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  2. A parametric study of laser induced ablation-oxidation on porous silicon surfaces

    International Nuclear Information System (INIS)

    De Stefano, Luca; Rea, Ilaria; Nigro, M Arcangela; Della Corte, Francesco G; Rendina, Ivo

    2008-01-01

    We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 μm and with thicknesses between 100 nm and 5 μm have been produced, depending on the porosity of the porous silicon, by using a 40 x focusing objective

  3. Charge state of oxide layer of SIMOX-structures

    CERN Document Server

    Askinazi, A Y; Dmitriev, V A; Miloglyadova, L V

    2001-01-01

    The charge state of the oxide layer of the SIMOX-structures, obtained in the course of forming the oxide layers, bricked up in the silicon volume, through the oxygen ions implantation into the Si, is studied. The charge state of the given structures is studied through the method of the layer-by-layer profiling, which makes it possible to obtain the dependence of the plane zones potential on the oxide layer thickness. It is established, that during the process of the SIMOX-structures formation in the oxide layer near the boundary with the Si there appear defects, responsible for the charge. The radiation from the near-the-ultraviolet (NUV) area without the applied electric field neutralizes the given charge. The simultaneous impact of the NUV-radiation and electric field leads to the formation of significantly positive charge

  4. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  5. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  6. Thermal oxidation of silicon with two oxidizing species

    International Nuclear Information System (INIS)

    Vild-Maior, A.A.; Filimon, S.

    1979-01-01

    A theoretical model for the thermal oxidation of silicon in wet oxygen is presented. It is shown that the presence of oxygen in the oxidation furnace has an important effect when the water temperature is not too high (less than about 65 deg C). The model is in good agreement with the experimental data. (author)

  7. Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

    Science.gov (United States)

    Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

    2011-01-01

    A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

  8. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  9. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

    2000-11-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

  10. Polyenergy ion beam synthesis of buried oxynitride layer in silicon

    International Nuclear Information System (INIS)

    Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

    2000-01-01

    The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

  11. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  12. Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

    Science.gov (United States)

    Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

    2017-11-01

    Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

  13. Microstructure and oxidative degradation behavior of silicon carbide fiber Hi-Nicalon type S

    International Nuclear Information System (INIS)

    Takeda, M.; Urano, A.; Sakamoto, J.; Imai, Y.

    1998-01-01

    Polycarbosilane-derived SiC fibers, Nicalon, Hi-Nicalon, and Hi-Nicalon type S were exposed for 1 to 100 h at 1273-1773 K in air. Oxide layer growth and tensile strength change of these fibers were examined after the oxidation test. As a result, three types of SiC fibers decreased their strength as oxide layer thickness increased. Fracture origins were determined at near the oxide layer-fiber interface. Adhered fibers arised from softening of silicon oxide at high temperature were also observed. In this study, Hi-Nicalon type S showed better oxidation resistance than other polycarbosilane-derived SiC fibers after 1673 K or higher temperature exposure in air for 10 h. This result was explained by the poreless silicon oxide layer structure of Hi-Nicalon type S. (orig.)

  14. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  15. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  16. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  17. Ultra thin buried oxide layers formed by low dose Simox process

    Energy Technology Data Exchange (ETDEWEB)

    Aspar, B.; Pudda, C.; Papon, A.M. [CEA Centre d`Etudes de Grenoble, 38 (France). Lab. d`Electronique et d`Instrumentation; Auberton Herve, A.J.; Lamure, J.M. [SOITEC, 38 - Grenoble (France)

    1994-12-31

    Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO{sub 2} precipitates. For 120 keV, this silicon layer is free of SiO{sub 2} precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs.

  18. Ultra thin buried oxide layers formed by low dose Simox process

    International Nuclear Information System (INIS)

    Aspar, B.; Pudda, C.; Papon, A.M.

    1994-01-01

    Oxygen low dose implantation is studied for two implantation energies. For 190 keV, a continuous buried oxide layer is obtained with a high dislocation density in the top silicon layer due to SiO 2 precipitates. For 120 keV, this silicon layer is free of SiO 2 precipitate and has a low dislocation density. Low density of pin-holes is observed in the buried oxide. The influence of silicon islands in the buried oxide on the breakdown electric fields is discussed. (authors). 6 refs., 5 figs

  19. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  20. Photonic intermediate layer for silicon tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

    2008-07-01

    The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

  1. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  2. Investigation of the interface region between a porous silicon layer and a silicon substrate

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

    2005-01-01

    Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

  3. Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

    Science.gov (United States)

    Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

    2017-04-19

    Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

  4. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  5. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  6. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  7. Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

    Science.gov (United States)

    Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

    2018-01-01

    Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

  8. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  9. Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

    International Nuclear Information System (INIS)

    Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

    1984-01-01

    Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

  10. Effects of silicon:carbon P+ layer interfaces on solar cells

    International Nuclear Information System (INIS)

    Jeffrey, F.R.; Vernstrom, G.D.; Weber, M.F.; Gilbert, J.R.

    1987-01-01

    Results are presented showing the effects on amorphous silicon (a-Si) photovoltaic performance of the interfaces associated with a silicon carbide (a-Si:C) p+ layer. Carbon grading into the intrinsic layer from the p+ layer increases open circuit voltage (Voc) from 0.7V to 0.88V. This effect is very similar to the boron profile effect reported earlier and supports the contention that Voc is being limited by an electron current at the p-i interface. The interface between the p+ a-Si:C layer and the transparent conductive oxide (TCO) is shown to be a potential source of high series resistance, with an abrupt interface showing the most serious problem. The effect is explained by electron injection from the TCO into the p+ layer being inhibited as a result of band mismatch

  11. Design criteria for XeF{sub 2} enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory (INL) and Integrated Disruptive Electronics Applications (IDEA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology - KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF{sub 2}) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  12. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  13. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2016-01-01

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  14. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  15. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  16. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  17. Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

    Energy Technology Data Exchange (ETDEWEB)

    Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

    2016-01-28

    The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

  18. Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-12-15

    Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

  19. Thermal processing and native oxidation of silicon nanoparticles

    International Nuclear Information System (INIS)

    Winters, Brandon J.; Holm, Jason; Roberts, Jeffrey T.

    2011-01-01

    In this study, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS) were used to investigate in-air oxidation of silicon nanoparticles ca. 11 nm in diameter. Particle samples were prepared first by extracting them from an RF plasma synthesis reactor, and then heating them in an inert carrier gas stream. The resulting particles had varying surface hydrogen coverages and relative amounts of SiH x (x = 1, 2, and 3), depending on the temperature to which they had been heated. The particles were allowed to oxidize in-air for several weeks. FTIR, XPS, and EELS analyses that were performed during this period clearly establish that adsorbed hydrogen retards oxidation, although in complex ways. In particular, particles that have been heated to intermediate hydrogen coverages oxidize more slowly in air than do freshly generated particles that have a much higher hydrogen content. In addition, the loss of surface hydride species at high processing temperatures results in fast initial oxidation and the formation of a self-limiting oxide layer. Analogous measurements made on deuterium-covered particles show broadly similar behavior; i.e., that oxidation is the slowest at some intermediate coverage of adsorbed deuterium.

  20. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2017-01-01

    Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

  1. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

  2. Hydrothermal deposition and characterization of silicon oxide nanospheres

    International Nuclear Information System (INIS)

    Pei, L.Z.

    2008-01-01

    Silicon oxide nanospheres with the average diameter of about 100 nm have been synthesized by hydrothermal deposition process using silicon and silica as the starting materials. The silicon oxide nanospheres were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectrum, respectively. The results show that large scale silicon oxide nanospheres with the uniform size are composed of Si and O showing the amorphous structure. Strong PL peak at 435 nm is observed demonstrating the good blue light emission property

  3. Mobility of charge carriers in porous silicon layers

    International Nuclear Information System (INIS)

    Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2008-01-01

    The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

  4. The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon

    International Nuclear Information System (INIS)

    Bulakh, B. M.; Korsunska, N. E.; Khomenkova, L. Yu.; Staraya, T. R.; Sheinkman, M. K.

    2006-01-01

    The photoluminescence spectra of porous silicon and their temperature dependences and transformations on aging are studied. It is shown that the infrared band prevailing in the spectra of as-prepared samples is due to exciton recombination in silicon crystallites. On aging, a well-pronounced additional band is observed at shorter wavelengths of the spectra. It is assumed that this band is due to the recombination of carriers that are excited in silicon crystallites and recombine via some centers located in oxide. It is shown that the broad band commonly observable in oxidized porous silicon is a superposition of the above two bands. The dependences of the peak positions and integrated intensities of the bands on time and temperature are studied. The data on the distribution of oxide centers with depth in the porous layer are obtained

  5. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  6. XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Schulze, D.; Finster, J.

    1983-01-01

    SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

  7. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  8. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  9. The oxidized porous silicon field emission array

    International Nuclear Information System (INIS)

    Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

    1993-01-01

    The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

  10. Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

    International Nuclear Information System (INIS)

    Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

  11. Increasing the radiation resistance of single-crystal silicon epitaxial layers

    Directory of Open Access Journals (Sweden)

    Kurmashev Sh. D.

    2014-12-01

    Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

  12. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2013-01-01

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ eff ) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ eff ) from 3.11 μs to 134.74 μs and the surface recombination velocity (S eff ) have decreased from 8441 cm s −1 to 195 cm s −1 . The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  13. High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

    International Nuclear Information System (INIS)

    Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

    2007-01-01

    Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

  14. Combined analyses of ion beam synthesized layers in porous silicon

    International Nuclear Information System (INIS)

    Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

    2001-01-01

    High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

  15. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  16. Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2007-01-01

    The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

  17. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  18. Indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  19. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  20. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  1. Spontaneous layering of porous silicon layers formed at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Parkhutik, Vitali; Curiel-Esparza, Jorge; Millan, Mari-Carmen [R and D Center MTM, Technical University of Valencia, Valencia (Spain); Albella, Jose [Institute of Materials Science (ICMM CSIC) Madrid (Spain)

    2005-06-01

    We report here a curious effect of spontaneous fracturing of the silicon layers formed in galvanostatic conditions at medium and high current densities. Instead of formation of homogeneous p-Si layer as at low currents, a stack of thin layers is formed. Each layer is nearly separated from others and possesses rather flat interfaces. The effects is observed using p{sup +}-Si wafers for the p-Si formation and starts being noticeable at above 100 mA/cm{sup 2}. We interpret these results in terms of the porous silicon growth model where generation of dynamic mechanical stress during the p-Si growth causes sharp changes in Si dissolution mechanism from anisotropic etching of individual needle-like pores in silicon to their branching and isotropic etching. At this moment p-Si layer loses its adhesion to the surface of Si wafer and another p-Si layer starts growing. One of the mechanisms triggering on the separation of p-Si layers from one another is a fluctuation of local anodic current in the pore bottoms associated with gas bubble evolution during the p-Si formation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Reflectance analysis of porosity gradient in nanostructured silicon layers

    Science.gov (United States)

    Jurečka, Stanislav; Imamura, Kentaro; Matsumoto, Taketoshi; Kobayashi, Hikaru

    2017-12-01

    In this work we study optical properties of nanostructured layers formed on silicon surface. Nanostructured layers on Si are formed in order to reach high suppression of the light reflectance. Low spectral reflectance is important for improvement of the conversion efficiency of solar cells and for other optoelectronic applications. Effective method of forming nanostructured layers with ultralow reflectance in a broad interval of wavelengths is in our approach based on metal assisted etching of Si. Si surface immersed in HF and H2O2 solution is etched in contact with the Pt mesh roller and the structure of the mesh is transferred on the etched surface. During this etching procedure the layer density evolves gradually and the spectral reflectance decreases exponentially with the depth in porous layer. We analyzed properties of the layer porosity by incorporating the porosity gradient into construction of the layer spectral reflectance theoretical model. Analyzed layer is splitted into 20 sublayers in our approach. Complex dielectric function in each sublayer is computed by using Bruggeman effective media theory and the theoretical spectral reflectance of modelled multilayer system is computed by using Abeles matrix formalism. Porosity gradient is extracted from the theoretical reflectance model optimized in comparison to the experimental values. Resulting values of the structure porosity development provide important information for optimization of the technological treatment operations.

  3. Surface and Core Electronic Structure of Oxidized Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Noor A. Nama

    2010-01-01

    Full Text Available Ab initio restricted Hartree-Fock method within the framework of large unit cell formalism is used to simulate silicon nanocrystals between 216 and 1000 atoms (1.6–2.65 nm in diameter that include Bravais and primitive cell multiples. The investigated properties include core and oxidized surface properties. Results revealed that electronic properties converge to some limit as the size of the nanocrystal increases. Increasing the size of the core of a nanocrystal resulted in an increase of the energy gap, valence band width, and cohesive energy. The lattice constant of the core and oxidized surface parts shows a decreasing trend as the nanocrystal increases in a size that converges to 5.28 Ǻ in a good agreement with the experiment. Surface and core convergence to the same lattice constant reflects good adherence of oxide layer at the surface. The core density of states shows highly degenerate states that split at the oxygenated (001-(1×1 surface due to symmetry breaking. The nanocrystal surface shows smaller gap and higher valence and conduction bands when compared to the core part, due to oxygen surface atoms and reduced structural symmetry. The smaller surface energy gap shows that energy gap of the nanocrystal is controlled by the surface part. Unlike the core part, the surface part shows a descending energy gap that proves its obedience to quantum confinement effects. Nanocrystal geometry proved to have some influence on all electronic properties including the energy gap.

  4. Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Hiraki, A; Okamoto, H

    1982-01-01

    Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.

  5. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.

    2010-11-19

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  6. Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

    KAUST Repository

    Alshareef, Husam N.; Caraveo-Frescas, J. A.; Cha, D. K.

    2010-01-01

    Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.

  7. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  8. Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

    Science.gov (United States)

    Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

    2018-01-01

    Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

  9. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  10. Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

    2015-09-15

    A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

  11. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  12. The kinetics of dewetting ultra-thin Si layers from silicon dioxide

    International Nuclear Information System (INIS)

    Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

    2012-01-01

    In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

  13. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy

    2012-08-20

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  14. Optical characteristics of silicon nanowires grown from tin catalyst layers on silicon coated glass

    KAUST Repository

    Ball, Jeremy; Centeno, Anthony; Mendis, Budhika G.; Reehal, H. S.; Alford, Neil

    2012-01-01

    The optical characteristics of silicon nanowires grown on Si layers on glass have been modeled using the FDTD (Finite Difference Time Domain) technique and compared with experimental results. The wires were grown by the VLS (vapour-liquid-solid) method using Sn catalyst layers and exhibit a conical shape. The resulting measured and modeled absorption, reflectance and transmittance spectra have been investigated as a function of the thickness of the underlying Si layer and the initial catalyst layer, the latter having a strong influence on wire density. High levels of absorption (>90% in the visible wavelength range) and good agreement between the modeling and experiment have been observed when the nanowires have a relatively high density of ∼4 wires/μ m2. The experimental and modeled results diverge for samples with a lower density of wire growth. The results are discussed along with some implications for solar cell fabrication. © 2012 Optical Society of America.

  15. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    Science.gov (United States)

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  16. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  17. Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon

    International Nuclear Information System (INIS)

    Du, Wentao; Zhang, Xiaoning; Zhang, Yujuan; Wang, Wenjiang; Duan, Xiaotao

    2012-01-01

    Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler–Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.

  18. Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

    International Nuclear Information System (INIS)

    Shieh, S.Y.; Evans, J.W.

    1992-01-01

    This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

  19. Oxygen recoil implant from SiO2 layers into single-crystalline silicon

    International Nuclear Information System (INIS)

    Wang, G.; Chen, Y.; Li, D.; Oak, S.; Srivastav, G.; Banerjee, S.; Tasch, A.; Merrill, P.; Bleiler, R.

    2001-01-01

    It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF 2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. [copyright] 2001 American Institute of Physics

  20. Surface layers in the 4A group metals with implanted silicon ions

    International Nuclear Information System (INIS)

    Kovneristyj, Yu.K.; Vavilova, V.V.; Krasnopevtsev, V.V.; Galkin, L.N.; Kudyshev, A.N.; Klechkovskaya, V.V.

    1987-01-01

    A study was made on the change of structure and phase composition of fine near the surface layers of 4A group metals (Hf, Zr, Ti) during ion Si implantation and successive thermal annealing at elevated temperatures. Implantation of Si + ions with 30 or 16 keV energy in Ti, Zr and Hf at room temperature results to amorphization of metal surface layer. The surface hafnium and titanium layer with implanted Si atoms due to interaction with residual atmosphere of oxygen turns during annealing at 870 K to amorphous solid solution of HfO 2m or TiO 2 with Si, preventing further metal oxidation; layers of amorphous alloy are characterized by thermal stability up to 1270 K. Oxidation of the surface amorphous layer in residual oxygen atmosphere and its crystallization in ZrO 2 take place in result of Zr annealing with implanted Si ions at temperature not exceeding 870 K. Similar phenomena are observed in the case of hafnium with implanted oxygen ions or small dose of silicon ions. Thermal stability of amorphous layers produced during ion implantation of Si in Ti, Zr and Hf corresponds to scale resistance of monolithic alloys in Ti-Si, Zr-Si and Hf-Si systems

  1. Waveguiding properties of Er-implanted silicon-rich oxides

    International Nuclear Information System (INIS)

    Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

    2007-01-01

    The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

  2. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    International Nuclear Information System (INIS)

    Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

    2005-01-01

    Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

  3. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, S. David; Pedersen, Thomas

    2013-01-01

    The present work demonstrates that tuning the donor density of protective TiO2 layers on a photocathode has dramatic consequences for electronic conduction through TiO2 with implications for the stabilization of oxidation-sensitive catalysts on the surface. Vacuum annealing at 400 °C for 1 hour o...

  4. Carbon nanotube network-silicon oxide non-volatile switches.

    Science.gov (United States)

    Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

    2014-12-08

    The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

  5. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  6. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Science.gov (United States)

    Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

    2018-05-01

    Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

  7. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Directory of Open Access Journals (Sweden)

    Zhiwei Zhang

    2018-05-01

    Full Text Available Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young’s modulus, ultimate tensile strength (UTS, and strain at fracture is observed.

  8. Effect of p-layer properties on nanocrystalline absorber layer and thin film silicon solar cells

    International Nuclear Information System (INIS)

    Chowdhury, Amartya; Adhikary, Koel; Mukhopadhyay, Sumita; Ray, Swati

    2008-01-01

    The influence of the p-layer on the crystallinity of the absorber layer and nanocrystalline silicon thin film solar cells has been studied. Boron doped Si : H p-layers of different crystallinities have been prepared under different power pressure conditions using the plasma enhanced chemical vapour deposition method. The crystalline volume fraction of p-layers increases with the increase in deposition power. Optical absorption of the p-layer reduces as the crystalline volume fraction increases. Structural studies at the p/i interface have been done by Raman scattering studies. The crystalline volume fraction of the i-layer increases as that of the p-layer increases, the effect being more prominent near the p/i interface. Grain sizes of the absorber layer decrease from 9.2 to 7.2 nm and the density of crystallites increases as the crystalline volume fraction of the p-layer increases and its grain size decreases. With increasing crystalline volume fraction of the p-layer solar cell efficiency increases

  9. Oxidation kinetics of CVD silicon carbide and silicon nitride

    Science.gov (United States)

    Fox, Dennis S.

    1992-01-01

    The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

  10. Study of Silicon/silicon, Silicon/silicon Dioxide, and Metal-Oxide

    Science.gov (United States)

    Leung, To Chi

    A variable-energy positron beam is used to study Si/Si, Si/SiO_2, and metal-oxide -semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300^circC) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO_2. Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO_2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C -V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO_2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties.

  11. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  12. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  13. Improved adhesion of metal oxide layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention relates to: a method of preparing a coating ink for forming a zinc oxide layer, which method comprises the steps of: a) mixing zinc acetate and AlOH (OAc)2 in water or methanol and b) filtering out solids; a coating ink comprising zinc acetate and AlOH (OAc)2 in aqueous or m...

  14. Isothermal and cyclic oxidation resistance of pack siliconized Mo–Si–B alloy

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Sanjib, E-mail: sanjib@barc.gov.in

    2017-08-31

    Highlights: • Pack-siliconizing of Mo–Si–B alloy improves its oxidation resistance at 750, 900 and 1400 °C. • A marginal weight change of the coated alloy is detected in isothermal and cyclic oxidation tests. • Kinetics of growth of protective SiO{sub 2} scale is much faster at 1400 °C. • Self-healing SiO{sub 2} is developed at the cracks formed in MoSi{sub 2} layer during cyclic oxidation tests. - Abstract: Oxidation behaviour of MoSi{sub 2} coated Mo–9Si–8B–0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi{sub 2} layer during thermal cycling. The dominant oxidation mechanisms at 750–900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

  15. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    International Nuclear Information System (INIS)

    Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-01-01

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  16. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

    International Nuclear Information System (INIS)

    Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

    2006-01-01

    It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

  17. Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

    Science.gov (United States)

    Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

    2005-01-01

    Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

  18. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  19. Low-stress silicon nitride layers for MEMS applications

    Science.gov (United States)

    Iliescu, Ciprian; Wei, Jiashen; Chen, Bangtao; Ong, Poh Lam; Tay, Francis E. H.

    2006-12-01

    The paper presents two deposition methods for generation of SiN x layers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode, the combined deposition rate of mix frequency is quite small in order to produce homogenous SiN x layers. In the second method, a high power which was up to 600 W has been used, may also produce low residual stress (0-20 MPa), with higher deposition rate (250 to 350 nm/min). The higher power not only leads to higher dissociation rates of gases which results in higher deposition rates, but also brings higher N bonding in the SiN x films and higher compressive stress from higher volume expansion of SiN x films, which compensates the tensile stress and produces low residual stress. In addition, the paper investigates the influence of other important parameters which have great impact to the residual stress and deposition rates, such as reactant gases flow rate and pressure. By using the final optimized recipe, masking layer for anisotropic wet etching in KOH and silicon nitride cantilever have been successfully fabricated based on the low stress SiN x layers. Moreover, nanoporous membrane with 400nm pores has also been fabricated and tested for cell culture. By cultivating the mouse D1 mesenchymal stem cells on top of the nanoporous membrane, the results showed that mouse D1 mesenchymal stem cells were able to grow well. This shows that the nanoporous membrane can be used as the platform for interfacing with living cells to become biocapsules for biomolecular separation.

  20. About the optical properties of oxidized black silicon structures

    Science.gov (United States)

    Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

    2017-02-01

    The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

  1. Bovine serum albumin adsorption on passivated porous silicon layers

    Science.gov (United States)

    Lockwood, David; Boukherroub, Rabah

    2005-03-01

    Hydrogen-terminated porous silicon (pSi) films were fabricated through electrochemical anodization of crystalline Si in HF-based solutions. The pSi-H surface was chemically functionalized by thermal reaction with undecylenic acid to produce an organic monolayer covalently attached to the silicon surface through Si-C bonds and bearing an acid terminal group. Bovine serum albumin (BSA) was then adsorbed onto the modified surface. SEM showed that the porous films were damaged and partially lifted off the Si substrate after a prolonged BSA adsorption. Ellipsometry revealed that the BSA had penetrated ˜ 1.3 micrometers into the porous structure. The film damage results from BSA anchoring itself tightly through strong electrostatic interactions to the acid-covered Si sidewalls. A change in surface tension during BSA film formation then causes the pSi layer to buckle and lift-off the underlying Si substrate. FTIR results from the modified pSi surfaces showed the presence of strong characteristic Amide I, II and III vibrational bands after BSA adsorption.

  2. The influence of oxidation properties on the electron emission characteristics of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    He, Li [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Xiaoning, E-mail: znn@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Wenjiang [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Haicheng [School of Electrical and Information Engineering, Beifang University of Nationalities, Yinchuan750021 (China)

    2016-09-30

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm{sup 2} and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  3. The influence of oxidation properties on the electron emission characteristics of porous silicon

    International Nuclear Information System (INIS)

    He, Li; Zhang, Xiaoning; Wang, Wenjiang; Wei, Haicheng

    2016-01-01

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm"2 and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  4. Y-Ba-Cu-O superconducting film on oxidized silicon

    International Nuclear Information System (INIS)

    Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

    1988-01-01

    We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

  5. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  6. Fluorescence studies of Rhodamine 6G functionalized silicon oxide nanostructures

    International Nuclear Information System (INIS)

    Baumgaertel, Thomas; Borczyskowski, Christian von; Graaf, Harald

    2010-01-01

    Selective anchoring of optically active molecules on nanostructured surfaces is a promising step towards the creation of nanoscale devices with new functionalities. Recently we have demonstrated the electrostatic attachment of charged fluorescent molecules on silicon oxide nanostructures prepared by atomic force microscopy (AFM) nanolithography via local anodic oxidation (LAO) of dodecyl-terminated silicon. In this paper we report on our findings from a more detailed optical investigation of the bound dye Rhodamine 6G. High sensitivity optical wide field microscopy as well as confocal laser microscopy have been used to characterize the Rhodamine fluorescence emission. A highly interesting question concerns the interaction between an emitter close to a silicon surface because mechanisms such as energy transfer and fluorescence quenching will occur which are still not fully understood. Since the oxide thickness can be varied during preparation continuously from 1 to ∼ 5 nm, it is possible to investigate the fluorescence of the bound dye in close proximity to the underlying silicon. Using confocal laser microscopy we were also able to obtain optical spectra from the bound molecules. Together with the results from an analysis of their photochemical bleaching behaviour, we conjecture that some of the Rhodamine 6G molecules on the structure are interacting with the oxide, causing a spectral shift and differences in their photochemical properties.

  7. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  8. Alternative method for steam generation for thermal oxidation of silicon

    Science.gov (United States)

    Spiegelman, Jeffrey J.

    2010-02-01

    Thermal oxidation of silicon is an important process step in MEMS device fabrication. Thicker oxide layers are often used as structural components and can take days or weeks to grow, causing high gas costs, maintenance issues, and a process bottleneck. Pyrolytic steam, which is generated from hydrogen and oxygen combustion, was the default process, but has serious drawbacks: cost, safety, particles, permitting, reduced growth rate, rapid hydrogen consumption, component breakdown and limited steam flow rates. Results from data collected over a 24 month period by a MEMS manufacturer supports replacement of pyrolytic torches with RASIRC Steamer technology to reduce process cycle time and enable expansion previously limited by local hydrogen permitting. Data was gathered to determine whether Steamers can meet or exceed pyrolytic torch performance. The RASIRC Steamer uses de-ionized water as its steam source, eliminating dependence on hydrogen and oxygen. A non-porous hydrophilic membrane selectively allows water vapor to pass. All other molecules are greatly restricted, so contaminants in water such as dissolved gases, ions, total organic compounds (TOC), particles, and metals can be removed in the steam phase. The MEMS manufacturer improved growth rate by 7% over the growth range from 1μm to 3.5μm. Over a four month period, wafer uniformity, refractive index, wafer stress, and etch rate were tracked with no significant difference found. The elimination of hydrogen generated a four-month return on investment (ROI). Mean time between failure (MTBF) was increased from 3 weeks to 32 weeks based on three Steamers operating over eight months.

  9. Effect of backbond oxidation on silicon nanocrystallites

    International Nuclear Information System (INIS)

    Ramos, L.E.; Furthmueller, J.; Bechstedt, F.

    2004-01-01

    We employ density functional calculations to study properties of Si nanocrystals after backbond oxidation in comparison to the ones passivated with hydrogen or hydroxyl. Structural parameters, pair excitation energies, quasiparticle gaps, and electrostatic potentials vary significantly in dependence on degree of oxidation and surface passivation. The variations are discussed within a quantum confinement picture. Blueshifts and redshifts observed in photoluminescence are related to the size of the Si nanocrystallite cores and the oxygen incorporation via passivation with group OH or oxidation

  10. DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

    Directory of Open Access Journals (Sweden)

    V. A. Solodukha

    2016-01-01

    Full Text Available The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield intensity. In order to measure the disrupted layer with the help of Auger spectroscopy it is necessary to determine dependence of the released Auger electron amount on sputtering time (profile and then the dependence is analyzed. Silicon amount in the disrupted layer is less than in the volume. While going deeper the disruptive layer is decreasing that corresponds to an increase of atom density in a single layer. The essence of the method lies in the fact the disruptive layer is removed by ion beam sputtering and detection of interface region is carried out with the help of registration of the Auger electron yield intensity from the sputtered surface up to the moment when it reaches the value which is equal to the Auger electron yield intensity for single-crystal silicon. While removing surface silicon layers the registration of the Auger electron yield intensity from silicon surface makes it possible to control efficiently a presence of the disrupted layer on the silicon wafer surface. In this case depth control locality is about 1.0 nm due to some peculiarities of Auger spectroscopy method. The Auger electron yield intensity is determined automatically while using Auger spectrometer and while removing the disrupted layer the intensity is gradually increasing. Depth of the disrupted layer is determined by measuring height of the step which has been formed as a result of removal of the disrupted layer from the silicon wafer surface. Auger spectroscopy methods ensures an efficient depth control surface disruptions at the manufacturing stages of silicon wafers and integrated circuits. The depth measurement range of disruptions constitutes 0.001–1.000 um.

  11. Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

    International Nuclear Information System (INIS)

    Park, Jeong-Yong; Lee, Jong-Hyun

    2003-01-01

    This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

  12. Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

    KAUST Repository

    Essig, Stephanie

    2018-02-21

    Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.

  13. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  14. Development of an oxidized porous silicon vacuum microtriode

    Energy Technology Data Exchange (ETDEWEB)

    Smith, II, Don Deewayne [Texas A & M Univ., College Station, TX (United States)

    1994-05-01

    In order to realize a high-power microwave amplifier design known as a gigatron, a gated field emission array must be developed that can deliver a high-intensity electron beam at gigahertz frequencies. No existing field emission device meets the requirements for a gigatron cathode. In the present work, a porous silicon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the nanometer scale, and a true two-dimensional array geometry can be approached. A wide number of applications for such a device exist in various disciplines. Oxidized porous silicon vacuum diodes were first developed in 1990. No systematic study had been done to characterize the performance of these devices as a function of the process parameters. The author has done the first such study, fabricating diodes from p<100>, p<111>, and n<100> silicon substrates. Anodization current densities from 11 mA/cm2 to 151 mA/cm2 were used, and Fowler-Nordheim behavior was observed in over 80% of the samples. In order to effectively adapt this technology to mainstream vacuum microelectronic applications, a means of creating a gated triodic structure must be found. No previous attempts had successfully yielded such a device. The author has succeeded in utilizing a novel metallization method to fabricate the first operational oxidized porous silicon vacuum microtriodes, and results are encouraging.

  15. On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Zinine, A.; Bankras, R.G.; Wormeester, Herbert; Poelsema, Bene; Schmitz, Jurriaan

    2006-01-01

    After a cleaning procedure, a silicon surface can be terminated by Si-OH groups which results in a high chemical activity. As it is accepted, after removing the wet-chemically grown oxide layer using an HF solution, the surface becomes terminated with Si-H groups. This results in a chemically stable

  16. XPS studies of SiO/sub 2/ surface layers formed by oxygen ion implantation into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, D.; Finster, J. (Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie); Hensel, E.; Skorupa, W.; Kreissig, U. (Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic))

    1983-03-16

    SiO/sub 2/ surface layers of 160 nm thickness formed by /sup 16/O/sup +/ ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO/sub 2/. There is no evidence for Si or SiO/sub x/ (0oxide layers. Only its thickness is somewhat larger than in thermal oxide.

  17. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  18. Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

    Science.gov (United States)

    Fox, D. S.

    1994-01-01

    Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

  19. Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

    Science.gov (United States)

    Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

    2007-05-28

    We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

  20. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  1. Oxidation and corrosion of silicon-based ceramics and composites

    International Nuclear Information System (INIS)

    Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

    1997-01-01

    Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

  2. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  3. Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation

    Science.gov (United States)

    Carroll, M. S.; Chang, C.-L.; Sturm, J. C.; Büyüklimanli, T.

    1998-12-01

    In this letter, we show the ability, through introduction of a thin Si1-x-yGexCy layer, to eliminate the enhancement of enhanced boron diffusion in silicon due to an oxidizing surface or ion implant damage. This reduction of diffusion is accomplished through a low-temperature-grown thin epitaxial Si1-x-yGexCy layer which completely filters out excess interstitials introduced by oxidation or ion implant damage. We also quantify the oxidation-enhanced diffusion (OED) and transient-enhanced diffusion (TED) dependence on substitutional carbon level, and further report both the observation of carbon TED and OED, and its dependence on carbon levels.

  4. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Science.gov (United States)

    Yoo, Hana; Park, Soojin

    2010-06-01

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

  5. The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

    2010-06-18

    We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

  6. Influence of sample oxidation on the nature of optical luminescence from porous silicon

    International Nuclear Information System (INIS)

    Coulthard, I.; Antel, W. J. Jr.; Freeland, J. W.; Sham, T. K.; Naftel, S. J.; Zhang, P.

    2000-01-01

    Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (c) 2000 American Institute of Physics

  7. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-04-15

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  8. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jambois, O. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)]. E-mail: ojambois@el.ub.es; Vila, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Pellegrino, P. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Carreras, J. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Perez-Rodriguez, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Garrido, B. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Bonafos, C. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France); BenAssayag, G. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France)

    2006-12-15

    The electrical conductivity of silicon oxides containing silicon and silicon-carbon nanoparticles has been investigated. By use of sequential Si{sup +} and C{sup +} ion implantations in silicon oxide followed by an annealing at 1100 deg. C, luminescent Si nanocrystals and SiC nanoparticles were precipitated. The characterization of the electrical transport has been carried out on two kinds of structures, allowing parallel or perpendicular transport, with respect to the substrate. The first type of samples were elaborated by means of a focus-ion-beam technique: electrical contacts to embedded nanoparticles were made by milling two nanotrenches on the sample surface until reaching the buried layer, then filling them with tungsten. The distance between the electrodes is about 100 nm. The second type of samples correspond to 40 nm thick typical MOS capacitors. The electron transport along the buried layer has shown a dramatic lowering of the electrical current, up to five orders of magnitude, when applying a sequence of voltages. It has been related to a progressive charge retention inside the nanoparticles, which, on its turn, suppresses the electrical conduction along the layer. On the other hand, the MOS capacitors show a reversible carrier charge and discharge effect that limits the current at low voltage, mostly due to the presence of C in the layers. A typical Fowler-Nordheim injection takes place at higher applied voltages, with a threshold voltage equal to 23 V.

  10. Effect of the number of iron oxide nanoparticle layers on the magnetic properties of nanocomposite LbL assemblies

    International Nuclear Information System (INIS)

    Dincer, Ilker; Tozkoparan, Onur; German, Sergey V.; Markin, Alexey V.; Yildirim, Oguz; Khomutov, Gennady B.; Gorin, Dmitry A.; Venig, Sergey B.; Elerman, Yalcin

    2012-01-01

    Aqueous colloidal suspension of iron oxide nanoparticles has been synthesized. Z-potential of iron oxide nanoparticles stabilized by citric acid was −35±3 mV. Iron oxide nanoparticles have been characterized by the light scattering method and transmission electron microscopy. The polyelectrolyte/iron oxide nanoparticle thin films with different numbers of iron oxide nanoparticle layers have been prepared on the surface of silicon substrates via the layer-by-layer assembly technique. The physical properties and chemical composition of nanocomposite thin films have been studied by atomic force microscopy, magnetic force microscopy, magnetization measurements, Raman spectroscopy. Using the analysis of experimental data it was established, that the magnetic properties of nanocomposite films depended on the number of iron oxide nanoparticle layers, the size of iron oxide nanoparticle aggregates, the distance between aggregates, and the chemical composition of iron oxide nanoparticles embedded into the nanocomposite films. The magnetic permeability of nanocomposite coatings has been calculated. The magnetic permeability values depend on the number of iron oxide nanoparticle layers in nanocomposite film. - Highlights: ► The magnetic properties of nanocomposite films depended on the number of iron oxide nanoparticle layers. ► The iron oxide nanoparticle phase in nanocomposite coatings is a mixture of magnetite and maghemite phases. ► The magnetite and maghemite phases depend on a number of iron oxide nanoparticle layers because the iron oxide nanoparticles are oxidized from magnetite to maghemite.

  11. Transition of hydrated oxide layer for aluminum electrolytic capacitors

    International Nuclear Information System (INIS)

    Chi, Choong-Soo; Jeong, Yongsoo; Ahn, Hong-Joo; Lee, Jong-Ho; Kim, Jung-Gu; Lee, Jun-Hee; Jang, Kyung-Wook; Oh, Han-Jun

    2007-01-01

    A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides

  12. Contribution to implanted silicon layers and their annealing

    International Nuclear Information System (INIS)

    Combasson, J.-L.

    1976-01-01

    Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

  13. Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Luis G. Gerling

    2015-10-01

    Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

  14. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  15. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  16. Eddy current imaging for electrical characterization of silicon solar cells and TCO layers

    Science.gov (United States)

    Hwang, Byungguk; Hillmann, Susanne; Schulze, Martin; Klein, Marcus; Heuer, Henning

    2015-03-01

    Eddy Current Testing has been mainly used to determine defects of conductive materials and wall thicknesses in heavy industries such as construction or aerospace. Recently, high frequency Eddy Current imaging technology was developed. This enables the acquirement of information of different depth level in conductive thin-film structures by realizing proper standard penetration depth. In this paper, we summarize the state of the art applications focusing on PV industry and extend the analysis implementing achievements by applying spatially resolved Eddy Current Testing. The specific state of frequency and complex phase angle rotation demonstrates diverse defects from front to back side of silicon solar cells and characterizes homogeneity of sheet resistance in Transparent Conductive Oxide (TCO) layers. In order to verify technical feasibility, measurement results from the Multi Parameter Eddy Current Scanner, MPECS are compared to the results from Electroluminescence.

  17. Formation of porous surface layers in reaction bonded silicon nitride during processing

    Science.gov (United States)

    Shaw, N. J.; Glasgow, T. K.

    1979-01-01

    Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

  18. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  19. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  20. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    Science.gov (United States)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  1. Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

    2015-08-01

    A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

  2. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  3. Influence of silicon on hot-dip aluminizing process and subsequent oxidation for preparing hydrogen/tritium permeation barrier

    Energy Technology Data Exchange (ETDEWEB)

    Han, Shilei; Li, Hualing; Wang, Shumao; Jiang, Lijun; Liu, Xiaopeng [Energy Materials and Technology Research Institute, General Research Institute for Nonferrous Metals, Beijing 100088 (China)

    2010-04-15

    The development of the International Thermonuclear Experimental Reactor (ITER) requires the production of a material capable of acting as a hydrogen/tritium permeation barrier on low activation steel. It is well known that thin alumina layer can reduce the hydrogen permeation rate by several orders of magnitude. A technology is introduced here to form a ductile Fe/Al intermetallic layer on the steel with an alumina over-layer. This technology, consisting of two main steps, hot-dip aluminizing (HDA) and subsequent oxidation behavior, seems to be a promising coating method to fulfill the required goals. According to the experiments that have been done in pure Al, the coatings were inhomogeneous and too thick. Additionally, a large number of cracks and porous band could be observed. In order to solve these problems, the element silicon was added to the aluminum melt with a nominal composition. The influence of silicon on the aluminizing and following oxidation process was investigated. With the addition of silicon into the aluminum melt, the coating became thinner and more homogeneous. The effort of the silicon on the oxidation behavior was observed as well concerning the suppression of porous band and cracks. (author)

  4. Optical study of planar waveguides based on oxidized porous silicon impregnated with laser dyes

    Energy Technology Data Exchange (ETDEWEB)

    Chouket, A. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT-6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)], E-mail: habib.elhouichet@fst.rnu.tn; Oueslati, M. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)

    2009-05-15

    Oxidized porous silicon optical planar waveguides were elaborated and impregnated with rhodamine B and rhodamine 6G. The waveguiding, absorption, and photoluminescence properties of these impregnated waveguides were studied. Successful impregnation of the structure with laser dyes is shown from photoluminescence and reflectivity measurements. Furthermore, the reflectivity spectra prove the homogenous incorporation of both dye molecules inside the pores of the matrices. The refractive indices of waveguide layers were determined before and after dye impregnation to indicate the conservation of guiding conditions. The optical losses in the visible wavelengths are studied as a function of dye concentration. The dye absorption is the main reason for these losses.

  5. Characterization of up-converter layers on bifacial silicon solar cells

    International Nuclear Information System (INIS)

    Pan, A.C.; Canizo, C. del; Luque, A.

    2009-01-01

    Photon converters can enhance the performance of solar cells as they have the ability to condition the solar spectrum, thus suiting the semiconductor bandgap better. This paper analyzes the implementation and characterization of rare earth-doped up-converters on bifacial silicon solar cells. The bifacial structures considered absorb the light emitted by the up-converter layer located at the rear of the cell. Two different ways of attaching the up-converter to the bifacial solar cell have been implemented: by dissolving the powder in a spin-on oxide and by dissolving it in a silicone gel. The characterization of this system through measurements of quantum efficiency and photocurrent is described. The measurement setup has been adapted to detect the device response in the NIR (near-infrared) range. A key aspect is the light power impinging on the cell; the system has a quartz-tungsten-halogen lamp as a source, and is capable of giving 240 mW m -2 . As the signals we want to detect are very small, an effort has been made to enhance the signal-to-noise ratio by using a low noise pre-amplifier, optimizing the power of the lamp and reducing the chopper frequency. The characterization of two commercial up-converter materials shows the functioning of the approach, as an increase in the photocurrent when illuminated in the 1500 nm wavelength range is detected in some of the cases.

  6. Second-harmonic generation in substoichiometric silicon nitride layers

    Science.gov (United States)

    Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

    2013-03-01

    Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

  7. Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

    Science.gov (United States)

    Hess, P.; Patzner, P.; Osipov, A. V.; Hu, Z. G.; Lingenfelser, D.; Prunici, P.; Schmohl, A.

    2006-08-01

    VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F II laser) in pure O II and pure H IIO atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.

  8. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

    2016-05-15

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  9. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  10. Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

    Science.gov (United States)

    Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

    2017-12-26

    The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

  11. Self-limiting and complete oxidation of silicon nanostructures produced by laser ablation in water

    Energy Technology Data Exchange (ETDEWEB)

    Vaccaro, L.; Messina, F.; Camarda, P.; Gelardi, F. M.; Cannas, M., E-mail: marco.cannas@unipa.it [Dipartimento di Fisica e Chimica, Università di Palermo, Via Archirafi 36, I-90123 Palermo (Italy); Popescu, R.; Schneider, R.; Gerthsen, D. [Laboratory for Electron Microscopy, Karlsruhe Institute of Technology, Engesserstrasse 7, 76131 Karlsruhe (Germany)

    2016-07-14

    Oxidized Silicon nanomaterials produced by 1064 nm pulsed laser ablation in deionized water are investigated. High-resolution transmission electron microscopy coupled with energy dispersive X-ray spectroscopy allows to characterize the structural and chemical properties at a sub-nanometric scale. This analysis clarifies that laser ablation induces both self-limiting and complete oxidation processes which produce polycrystalline Si surrounded by a layer of SiO{sub 2} and amorphous fully oxidized SiO{sub 2}, respectively. These nanostructures exhibit a composite luminescence spectrum which is investigated by time-resolved spectroscopy with a tunable laser excitation. The origin of the observed luminescence bands agrees with the two structural typologies: Si nanocrystals emit a μs-decaying red band; defects of SiO{sub 2} give rise to a ns-decaying UV band and two overlapping blue bands with lifetime in the ns and ms timescale.

  12. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, R., E-mail: riahirim01@gmail.com [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Faculty of Sciences Tunis–El Manar University (Tunisia); Derbali, L. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Ouertani, B. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Environment Science and Technology of Borj-Cedria (Tunisia); Ezzaouia, H. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

    2017-05-15

    Highlights: • The treatment of porous silicon (PS) with nickel oxide (NiO) decreases the reflectivity significantly. • FTIR analysis showed a substitution of Si−H bonds to Si−O−Si and Si−O−Ni after the thermal annealing. • Annealing the treated NiO/PS at 400 °C leads to a noticeable improvement of the photoluminescence (PL) intensity. • A blueshift was obtained in the PL spectra due to the decrease of silicon nanocrystallites size after exceeding 400 °C. - Abstract: This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total

  13. Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

    International Nuclear Information System (INIS)

    Riahi, R.; Derbali, L.; Ouertani, B.; Ezzaouia, H.

    2017-01-01

    Highlights: • The treatment of porous silicon (PS) with nickel oxide (NiO) decreases the reflectivity significantly. • FTIR analysis showed a substitution of Si−H bonds to Si−O−Si and Si−O−Ni after the thermal annealing. • Annealing the treated NiO/PS at 400 °C leads to a noticeable improvement of the photoluminescence (PL) intensity. • A blueshift was obtained in the PL spectra due to the decrease of silicon nanocrystallites size after exceeding 400 °C. - Abstract: This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total

  14. Retinal Layers Measurements following Silicone Oil Tamponade for Retinal Detachment Surgery.

    Science.gov (United States)

    Jurišić, Darija; Geber, Mia Zorić; Ćavar, Ivan; Utrobičić, Dobrila Karlica

    2017-12-19

    This study aimed to investigate the influence of silicone oil on the retinal nerve fiber layer (RNFL) thickness in patients with primary rhegmatogenous retinal detachment who underwent vitreoretinal surgery. The study included 47 patients (eyes), who underwent a pars plana vitrectomy with the silicone oil tamponade. The control group included unoperated eye of all participants. Spectral-domain optical coherence tomography (SD-OCT) was used for the measurements of peripapilar and macular RNFL thickness. The average peripapillary RNFL thickness was significantly higher in the silicone oil filled eyes during endotamponade and after its removal. The eyes with elevated IOP had less thickening of the RNFL in comparison to the eyes with normal IOP. Central macular thickness and macular volume were decreased in the silicone oil filled eyes in comparison to the control eyes. In conclusion, silicone oil caused peripapilar RNFL thickening in the vitrectomized eyes during endotamponade and after silicone oil removal.

  15. Self-cleaning glass coating containing titanium oxide and silicon

    International Nuclear Information System (INIS)

    Araujo, A.O. de; Alves, A.K.; Berutti, F.A.; Bergmann, C.P.

    2009-01-01

    Using the electro spinning technique nano fibers of titanium oxide doped with silicon were synthesized. As precursor materials, titanium propoxide, silicon tetra propoxide and a solution of polyvinylpyrrolidone were used. The non-tissue material obtained was characterized by X-ray diffraction to determine the phase and crystallite size, BET method to determine the surface and SEM to analyze the microstructure of the fibers. After ultrasound dispersion of this material in ethanol, the glass coatings were made by dip-coating methodology. The influence of the removal velocity, the solution composition and the glass surface preparation were evaluated. The film was characterized by the contact angle of a water droplet in its surface. (author)

  16. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  17. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  18. Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

    Science.gov (United States)

    Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

    2018-05-01

    An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

  19. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  20. Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

    Science.gov (United States)

    Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

    2015-10-01

    We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

  1. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  2. High resolution medium energy ion scattering study of silicon oxidation and oxy nitridation

    International Nuclear Information System (INIS)

    Gusev, E.P.; Lu, H.C.; Garfunkel, E.; Gustafsson, T.

    1998-01-01

    Full text: Silicon oxide is likely to remain the material of choice for gate oxides in microelectronics for the foreseeable future. As device become ever smaller and faster, the thickness of these layers in commercial products is predicted to be less than 50 Angstroms in just a few years. An understanding of such devices will therefore likely to be based on microscopic concepts and should now be investigated by atomistic techniques. With medium energy ion scattering (MEIS) using an electrostatic energy analyzer, depth profiling of thin (<60 Angstroms) silicon oxide films on Si(100) with 3 - 5 Angstroms depth resolution in the near region has been done. The growth mechanism of thin oxide films on Si(100) has been studied, using sequential oxygen isotope exposures. It is found that the oxide films are stoichiometric to within approx. 10 Angstroms of the interface. It is also found that the oxidation reactions occur at the surface, in the transition region and at interface, with only the third region being included in the conventional (Deal-Grove) model for oxide formation. Nitrogen is sometimes added to gate oxides, as it has been found empirically that his improves some of the electrical properties. The role, location and even the amount of nitrogen that exists in such films are poorly understood, and represent interesting analytical challenges. MEIS data will be presented that address these questions, measured for a number of different processing conditions. We have recently demonstrated how to perform nitrogen nano-engineering in such ultrathin gate dielectrics, and these results will also be discussed

  3. Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

    International Nuclear Information System (INIS)

    Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

    2008-01-01

    Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

  4. Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching

    Science.gov (United States)

    Karyaoui, M.; Bardaoui, A.; Ben Rabha, M.; Harmand, J. C.; Amlouk, M.

    2012-05-01

    In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.

  5. Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

    Science.gov (United States)

    Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

    2018-03-07

    Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

  6. Microarc Oxidation of the High-Silicon Aluminum AK12D Alloy

    Directory of Open Access Journals (Sweden)

    S. K. Kiseleva

    2015-01-01

    Full Text Available The aim of work is to study how the high-silicon aluminum AK12D alloy microstructure and MAO-process modes influence on characteristics (microhardness, porosity and thickness of the oxide layer of formed surface layer.Experimental methods of study:1 MAO processing of AK12D alloy disc-shaped samples. MAO modes features are concentration of electrolyte components – soluble water glass Na2SiO3 and potassium hydroxide (KOH. The content of two components both the soluble water glass and the potassium hydroxide was changed at once, with their concentration ratio remaining constant;2 metallographic analysis of AK12D alloy structure using an optical microscope «Olympus GX51»;3 image analysis of the system "alloy AK12D - MAO - layer" using a scanning electron microscope «JEOL JSM 6490LV»;4 hardness evaluation of the MAO-layers using a micro-hardness tester «Struers Duramin».The porosity, microhardness and thickness of MAO-layer formed on samples with different initial structures are analyzed in detail. Attention is paid to the influence of MAO process modes on the quality layer.It has been proved that the MAO processing allows reaching quality coverage with high microhardness values of 1200-1300HV and thickness up to 114 μm on high-silicon aluminum alloy. It has been found that the initial microstructure of alloy greatly affects the thickness of the MAO - layer. The paper explains the observed effect using the physical principles of MAO process and the nature of silicon particles distribution in the billet volume.It has been shown that increasing concentration of sodium silicate and potassium hydroxide in the electrolyte results in thicker coating and high microhardness.It has been revealed that high microhardness is observed in the thicker MAO-layers.Conclusions:1 The microstructure of aluminum AK12D alloy and concentration of electrolyte components - liquid glass Na2SiO3 and potassium hydroxide affect the quality of coating resulted from MAO

  7. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

    Science.gov (United States)

    Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

    2018-05-02

    Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

  8. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  9. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    Science.gov (United States)

    Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  10. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  11. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  12. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  13. Electrochemical Deposition of Conformal and Functional Layers on High Aspect Ratio Silicon Micro/Nanowires.

    Science.gov (United States)

    Ozel, Tuncay; Zhang, Benjamin A; Gao, Ruixuan; Day, Robert W; Lieber, Charles M; Nocera, Daniel G

    2017-07-12

    Development of new synthetic methods for the modification of nanostructures has accelerated materials design advances to furnish complex architectures. Structures based on one-dimensional (1D) silicon (Si) structures synthesized using top-down and bottom-up methods are especially prominent for diverse applications in chemistry, physics, and medicine. Yet further elaboration of these structures with distinct metal-based and polymeric materials, which could open up new opportunities, has been difficult. We present a general electrochemical method for the deposition of conformal layers of various materials onto high aspect ratio Si micro- and nanowire arrays. The electrochemical deposition of a library of coaxial layers comprising metals, metal oxides, and organic/inorganic semiconductors demonstrate the materials generality of the synthesis technique. Depositions may be performed on wire arrays with varying diameter (70 nm to 4 μm), pitch (5 μ to 15 μ), aspect ratio (4:1 to 75:1), shape (cylindrical, conical, hourglass), resistivity (0.001-0.01 to 1-10 ohm/cm 2 ), and substrate orientation. Anisotropic physical etching of wires with one or more coaxial shells yields 1D structures with exposed tips that can be further site-specifically modified by an electrochemical deposition approach. The electrochemical deposition methodology described herein features a wafer-scale synthesis platform for the preparation of multifunctional nanoscale devices based on a 1D Si substrate.

  14. Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

    International Nuclear Information System (INIS)

    Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

    2004-01-01

    Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0

  15. Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

    DEFF Research Database (Denmark)

    Ubaldi, F; Pozzi, G; Kasama, Takeshi

    2010-01-01

    Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

  16. Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells.

    Science.gov (United States)

    Lee, Kyung D; Park, Myung J; Kim, Do-Yeon; Kim, Soo M; Kang, Byungjun; Kim, Seongtak; Kim, Hyunho; Lee, Hae-Seok; Kang, Yoonmook; Yoon, Sam S; Hong, Byung H; Kim, Donghwan

    2015-09-02

    Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

  17. A model for the formation of lattice defects at silicon oxide precipitates in silicon

    International Nuclear Information System (INIS)

    Vanhellemont, J.; Gryse, O. de; Clauws, P.

    2003-01-01

    The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared with published experimental data. A model for stacking fault nucleation at oxide precipitates is developed based on strain and self-interstitial accumulation during the thermal history of the wafer. During a low-temperature treatment high levels of strain develop. During subsequent high-temperature treatment, excess strain energy in the precipitate is released by self-interstitial emission leading to favourable conditions for stacking fault nucleation

  18. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  19. Plated copper front side metallization on printed seed-layers for silicon solar cells

    OpenAIRE

    Kraft, Achim

    2015-01-01

    A novel copper front side metallization architecture for silicon solar cells based on a fine printed silver seed-layer, plated with nickel, copper and silver, is investigated. The work focuses on the printing of fine seed-layers with low silver consumption, the corrosion of the printed seed-layers by the interaction with electrolyte solutions and the encapsulation material on module level and on the long term stability of the cells due to copper migration. The investigation of the correlation...

  20. Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

    International Nuclear Information System (INIS)

    Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

    2013-01-01

    We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

  1. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  2. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    Energy Technology Data Exchange (ETDEWEB)

    Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  3. Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

    Energy Technology Data Exchange (ETDEWEB)

    Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

    2011-06-15

    The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Magnetic oxide heterostructures. EuO on cubic oxides and on silicon

    International Nuclear Information System (INIS)

    Caspers, Christian

    2013-01-01

    to clearly below a closed interface coverage. Thus, we could confirm a heteroepitaxial integration of EuO on Si (001), which is the experimental basis for possible band-matched coherent tunneling. This is the first time that a direct integration of high quality EuO on silicon was experimentally realized - without insertion of additional oxide buffer layers. Such optimized EuO/Si (001) heterointerfaces are paving the pathway for near-future spin-functional devices using EuO tunnel contacts.

  5. Activity and lifetime of urease immobilized using layer-by-layer nano self-assembly on silicon microchannels.

    Science.gov (United States)

    Forrest, Scott R; Elmore, Bill B; Palmer, James D

    2005-01-01

    Urease has been immobilized and layered onto the walls of manufactured silicon microchannels. Enzyme immobilization was performed using layer-by-layer nano self-assembly. Alternating layers of oppositely charged polyelectrolytes, with enzyme layers "encased" between them, were deposited onto the walls of the silicon microchannels. The polycations used were polyethylenimine (PEI), polydiallyldimethylammonium (PDDA), and polyallylamine (PAH). The polyanions used were polystyrenesulfonate (PSS) and polyvinylsulfate (PVS). The activity of the immobilized enzyme was tested by pumping a 1 g/L urea solution through the microchannels at various flow rates. Effluent concentration was measured using an ultraviolet/visible spectrometer by monitoring the absorbance of a pH sensitive dye. The architecture of PEI/PSS/PEI/urease/PEI with single and multiple layers of enzyme demonstrated superior performance over the PDDA and PAH architectures. The precursor layer of PEI/PSS demonstrably improved the performance of the reactor. Conversion rates of 70% were achieved at a residence time of 26 s, on d 1 of operation, and >50% at 51 s, on d 15 with a six-layer PEI/urease architecture.

  6. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    OpenAIRE

    Geissbühler Jonas; Werner Jérémie; Martin de Nicolas Silvia; Barraud Loris; Hessler-Wyser Aïcha; Despeisse Matthieu; Nicolay Sylvain; Tomasi Andrea; Niesen Bjoern; De Wolf Stefaan; Ballif Christophe

    2015-01-01

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p type amorphous silicon with molybdenum oxide films. In this article we evidence that annealing above 130?°C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited c...

  7. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon

  8. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

  9. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  10. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  11. Adhesion between coating layers based on epoxy and silicone

    DEFF Research Database (Denmark)

    Svendsen, Jacob R.; Kontogeorgis, Georgios; Kiil, Søren

    2007-01-01

    The adhesion between a silicon tie-coat and epoxy primers, used in marine coating systems, has been studied in this work. Six epoxy coatings (with varying chain lengths of the epoxy resins), some of which have shown problems with adhesion to the tie-coat during service life, have been considered....... The experimental investigation includes measurements of the surface tension of the tie-coat and the critical surface tensions of the epoxies, topographic investigation of the surfaces of cured epoxy coatings via atomic force microscopy (AFM), and pull-off tests for investigating the strength of adhesion...... to the silicon/epoxy systems. Calculations for determining the roughness factor of the six epoxy coatings (based on the AFM topographies) and the theoretical work of adhesion have been carried out. The coating surfaces are also characterized based on the van Oss-Good theory. Previous studies on the modulus...

  12. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

  13. Charged particle detectors made from thin layers of amorphous silicon

    International Nuclear Information System (INIS)

    Morel, J.R.

    1986-05-01

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241 Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

  14. Fatigue crack layer propagation in silicon-iron

    Science.gov (United States)

    Birol, Y.; Welsch, G.; Chudnovsky, A.

    1986-01-01

    Fatigue crack propagation in metal is almost always accompanied by plastic deformation unless conditions strongly favor brittle fracture. The analysis of the plastic zone is crucial to the understanding of crack propagation behavior as it governs the crack growth kinetics. This research was undertaken to study the fatigue crack propagation in a silicon iron alloy. Kinetic and plasticity aspects of fatigue crack propagation in the alloy were obtained, including the characterization of damage evolution.

  15. Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

    International Nuclear Information System (INIS)

    Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A

    2017-01-01

    The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)

  16. Photochemical preparation of aluminium oxide layers via vacuum ultraviolet irradiation of a polymeric hexanoato aluminium complex

    International Nuclear Information System (INIS)

    Wennrich, L.; Khalil, H.; Bundesmann, C.; Decker, U.; Gerlach, J.W.; Helmstedt, U.; Manova, D.; Naumov, S.; Prager, L.

    2013-01-01

    By means of photochemical conversion of thin layers of a polymeric hexanoato aluminium complex as the precursor, thin aluminium oxide layers were prepared onto silicon wafers. The precursor compound was synthesized and characterized by several analytical techniques like NMR, FTIR, XPS, ICP, and found to be a polymeric aluminium-containing coordination compound which has been proposed to be a hydroxo-bridged aluminium chain with pendant hexanoyl side-chains ascertained as catena-poly[{di(κ-O,O-hexanoato)aluminium}(μ-hydroxo)] (PHAH). Thin layers deposited from a solution of PHAH in toluene onto silicon wafers were irradiated using VUV radiation from a xenon excimer lamp. The layers were characterized by XPS, XRD, XRR, and spectroscopic ellipsometry. VUV radiation with a radiant exposure of E = 36 J cm −2 led to almost carbon-free amorphous layers with a composition close to that of alumina having a density of about 2.1 g cm −3 . Thus, using the example of a polymeric aluminium complex, the potential of the photochemical conversion of metal complexes into oxides could be shown as an alternative method, in addition to sol–gel techniques, for the generation of thin plane metal-oxide layers at normal temperature and pressure. Highlights: ► A polymeric aluminium complex was synthesized and characterized by NMR, FTIR, XPS and ICP. ► Thin layers of the compound were irradiated using vacuum-UV radiation and converted to AlO x . ► Quantum-chemical calculations explain the conversion mechanism.

  17. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  18. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  19. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  20. Growth of nanocrystalline silicon thin film with layer-by-layer technique for fast photo-detecting applications

    International Nuclear Information System (INIS)

    Lin, C.-Y.; Fang, Y.-K.; Chen, S.-F.; Lin, P.-C.; Lin, C.-S.; Chou, T.-H; Hwang, J.S.; Lin, K.I.

    2006-01-01

    High mobility nanocrystalline silicon (nc-Si) films with layer-by-layer technique for fast photo-detecting applications were studied. The structure and morphology of films were studied by means of XRD, micro-Raman scattering, SEM and AFM. The Hall mobility and absorption properties have been investigated and found they were seriously affected by the number of layers in growing, i.e., with increasing of layer number, Hall mobility increased but absorption coefficient decreased. The optimum layer number of nc-Si films for fast near-IR photo-detecting is 7 with film thickness of 1400 nm, while that for fast visible photo-detecting is 17 with film thickness of 3400 nm

  1. Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon

    International Nuclear Information System (INIS)

    Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R.; Acero, M.C. Esteve, J.; Montserrat, J.; El-Hassani, A.

    1996-01-01

    In this work the etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon is studied as a function of the processing parameters, the implantation dose and temperature, and the presence of capping layers during implantation. Etching characteristics have been probed using tetramethylammonium hydroxide or KOH solutions for different times up to 6 h. Results show that, after annealing, the minimum dose required for the formation of an efficient etch-stop layer is about 4 x 10 17 cm -2 , for an implantation energy of 75 keV. This is defined as a layer with an efficient etch selectivity in relation to Si of s ≥ 100. For larger implantation doses efficient etch selectivities larger than 100 are obtained. However, for these doses a considerable density of pits is observed in the etch-stop layer. These are related to the presence of nitrogen poor Si regions in the buried layer after annealing, due to a partial separation of silicon and silicon nitride phases during the annealing process. The influence of this separation of phases as well as nitrogen gettering in the buried layer on the etch-stop behavior is discussed as a function of the processing parameters

  2. THE 15 LAYER SILICON DRIFT DETECTOR TRACKER IN EXPERIMENT 896

    International Nuclear Information System (INIS)

    Pandey, S.U.

    1998-01-01

    Large linear silicon drift detectors have been developed and are in production for use in several experiments. Recently 15 detectors were used as a tracking device in BNL-AGS heavy ion experiment (E896). The detectors were successfully operated in a 6.2 T magnetic field. The behavior of the detectors, such as drift uniformity, resolution, and charge collection efficiency are presented. The effect of the environment on the detector performance is discussed. Some results from the experimental run are presented. The detectors performed well in an experimental environment. This is the first tracking application of these detectors

  3. Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

    Science.gov (United States)

    Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

    2018-05-01

    Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

  4. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  5. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  6. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes

    DEFF Research Database (Denmark)

    Madsen, Steen; Bozhevolnyi, Sergey I.; Birkelund, Karen

    1997-01-01

    Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium...... hydroxide. Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics....

  8. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    International Nuclear Information System (INIS)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

    2016-01-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  9. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Ma, Zhongquan, E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444 (China)

    2016-12-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  10. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    International Nuclear Information System (INIS)

    Acero, M.C.; Esteve, J.; Montserrat, J.; Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R.

    1993-01-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10 17 cm -2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10 17 cm -2 , layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author)

  11. Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Acero, M.C.; Esteve, J.; Montserrat, J. (Centro Nacional de Microelectronica (CNM-CSIC), Bellaterra (Spain)); Perez-Rodriguez, A.; Garrido, B.; Romano-Rodriguez, A.; Morante, J.R. (Barcelona Univ. (Spain). Dept. Fisica Aplicada i Electronica)

    1993-09-01

    The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2 x 10[sup 17] cm[sup -2] to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5 x 10[sup 17] cm[sup -2], layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. (author).

  12. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Science.gov (United States)

    Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

    2017-10-01

    An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

  13. Pt thermal atomic layer deposition for silicon x-ray micropore optics.

    Science.gov (United States)

    Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

    2018-04-20

    We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

  14. Metal/silicon Interfaces and Their Oxidation Behavior - Photoemission Spectroscopy Analysis.

    Science.gov (United States)

    Yeh, Jyh-Jye

    Synchrotron radiation photoemission spectroscopy was used to study Ni/Si and Au/Si interface properties on the atomic scale at room temperature, after high temperature annealing and after oxygen exposures. Room temperature studies of metal/Si interfaces provide background for an understanding of the interface structure after elevated temperature annealing. Oxidation studies of Si surfaces covered with metal overlayers yield insight about the effect of metal atoms in the Si oxidation mechanisms and are useful in the identification of subtle differences in bonding relations between atoms at the metal/Si interfaces. Core level and valence band spectra with variable surface sensitivities were used to study the interactions between metal, Si, and oxygen for metal coverages and oxide thickness in the monolayer region. Interface morphology at the initial stage of metal/Si interface formation and after oxidation was modeled on the basis of the evolutions of metal and Si signals at different probing depths in the photoemission experiment. Both Ni/Si and Au/Si interfaces formed at room temperature have a diffusive region at the interface. This is composed of a layer of metal-Si alloy, formed by Si outdiffusion into the metal overlayer, above a layer of interstitial metal atoms in the Si substrate. Different atomic structures of these two regions at Ni/Si interface can account for the two different growth orientations of epitaxial Ni disilicides on the Si(111) surface after thermal annealing. Annealing the Au/Si interface at high temperature depletes all the Au atoms except for one monolayer of Au on the Si(111) surface. These phenomena are attributed to differences in the metal-Si chemical bonding relations associated with specific atomic structures. After oxygen exposures, both the Ni disilicide surface and Au covered Si surfaces (with different coverages and surface orderings) show silicon in higher oxidation states, in comparison to oxidized silicon on a clean surface

  15. Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

    Science.gov (United States)

    Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

    2017-12-01

    A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

  16. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  17. Viscous properties of aluminum oxide nanotubes and aluminium oxide nanoparticles - silicone oil suspensions

    Science.gov (United States)

    Thapa, Ram; French, Steven; Delgado, Adrian; Ramos, Carlos; Gutierrez, Jose; Chipara, Mircea; Lozano, Karen

    2010-03-01

    Electrorheological (ER) fluids consisting of γ-aluminum oxide nanotubes and γ-aluminum oxide nanoparticles dispersed within silicone oil were prepared. The relationship between shear stress and shear rate was measured and theoretically simulated by using an extended Bingham model for both the rheological and electrorheological features of these systems. Shear stress and viscosity showed a sharp increase for the aluminum oxide nanotubes suspensions subjected to applied electric fields whereas aluminum oxide nanoparticles suspensions showed a moderate change. It was found that the transition from liquid to solid state (mediated by the applied electric field) can be described by a power law and that for low applied voltages the relationship is almost linear.

  18. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  19. Fabrication and characterization of iron oxide dextran composite layers

    Science.gov (United States)

    Iconaru, S. L.; Predoi, S. A.; Beuran, M.; Ciobanu, C. S.; Trusca, R.; Ghita, R.; Negoi, I.; Teleanu, G.; Turculet, S. C.; Matei, M.; Badea, Monica; Prodan, A. M.

    2018-02-01

    Super paramagnetic iron oxide nanoparticles such as maghemite have been shown to exhibit antimicrobial properties [1-5]. Moreover, the iron oxide nanoparticles have been proposed as a potential magnetically controllable antimicrobial agent which could be directed to a specific infection [3-5]. The present research has focused on studies of the surface and structure of iron oxide dextran (D-IO) composite layers surface and structure. These composite layers were deposited on Si substrates. The structure of iron oxide dextran composite layers was investigated by X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) while the surface morphology was evaluated by Scanning Electron Microscopy (SEM). The structural characterizations of the iron oxide dextran composite layers revealed the basic constituents of both iron and dextran structure. Furthermore, the in vitro evaluation of the antifungal effect of the complex layers, which have been shown revealed to be active against C. albicans cells at distinct intervals of time, is exhibited. Our research came to confirm the fungicidal effect of iron oxide dextran composite layers. Also, our results suggest that iron oxide dextran surface may be used for medical treatment of biofilm associated Candida infections.

  20. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

  1. Preparation and characterization of tempered tungsten layers on single crystalline silicon

    International Nuclear Information System (INIS)

    Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

    1984-01-01

    Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

  2. Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

    NARCIS (Netherlands)

    Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

    2017-01-01

    Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

  3. Oxidation protection and behavior of in-situ zirconium diboride–silicon carbide coating for carbon/carbon composites

    International Nuclear Information System (INIS)

    Li, Lu; Li, Hejun; Yin, Xuemin; Chu, Yanhui; Chen, Xi; Fu, Qiangang

    2015-01-01

    Highlights: • ZrB 2 –SiC coating was prepared on C/C composite by in-situ reaction. • A two-layered structure was obtained when the coating was oxidized at 1500 °C. • The formation and collapse of bubbles influenced the coating oxidation greatly. • The morphology evolution of oxide scale during oxidation was illuminated. - Abstract: To protect carbon/carbon (C/C) composites against oxidation, zirconium diboride–silicon carbide (ZrB 2 –SiC) coating was prepared by in-situ reaction using ZrC, B 4 C and Si as raw materials. The in-situ ZrB 2 –SiC coated C/C presented good oxidation resistance, whose weight loss was only 0.15% after isothermal oxidation at 1500 °C for 216 h. Microstructure evolution of coating at 1500 °C was studied, revealing a two-layered structure: (1) ZrO 2 (ZrSiO 4 ) embedded in SiO 2 -rich glass, and (2) unaffected ZrB 2 –SiC. The formation and collapse of bubbles influenced the coating oxidation greatly. A model based on the evolution of oxide scale was proposed to explain the failure mechanism of coating

  4. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  5. Functionalization of 2D macroporous silicon under the high-pressure oxidation

    Science.gov (United States)

    Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

    2018-03-01

    Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

  6. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, David S.; Pedersen, Thomas

    2013-01-01

    The semiconducting materials used for photoelectrochemical (PEC) water splitting must withstand the corrosive nature of the aqueous electrolyte over long time scales in order to be a viable option for large scale solar energy conversion. Here we demonstrate that atomic layer deposited titanium di...

  7. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator

    International Nuclear Information System (INIS)

    Zhang, P P; Yang, B; Rugheimer, P P; Roberts, M M; Savage, D E; Lagally, M G; Liu Feng

    2009-01-01

    We investigate the influence of heteroepitaxially grown Ge on the thermal dewetting and agglomeration of the Si(0 0 1) template layer in ultrathin silicon-on-insulator (SOI). We show that increasing Ge coverage gradually destroys the long-range ordering of 3D nanocrystals along the (1 3 0) directions and the 3D nanocrystal shape anisotropy that are observed in the dewetting and agglomeration of pure SOI(0 0 1). The results are qualitatively explained by Ge-induced bond weakening and decreased surface energy anisotropy. Ge lowers the dewetting and agglomeration temperature to as low as 700 0 C.

  8. Novel Size and Surface Oxide Effects in Silicon Nanowires as Lithium Battery Anodes

    KAUST Repository

    McDowell, Matthew T.

    2011-09-14

    With its high specific capacity, silicon is a promising anode material for high-energy lithium-ion batteries, but volume expansion and fracture during lithium reaction have prevented implementation. Si nanostructures have shown resistance to fracture during cycling, but the critical effects of nanostructure size and native surface oxide on volume expansion and cycling performance are not understood. Here, we use an ex situ transmission electron microscopy technique to observe the same Si nanowires before and after lithiation and have discovered the impacts of size and surface oxide on volume expansion. For nanowires with native SiO2, the surface oxide can suppress the volume expansion during lithiation for nanowires with diameters <∼50 nm. Finite element modeling shows that the oxide layer can induce compressive hydrostatic stress that could act to limit the extent of lithiation. The understanding developed herein of how volume expansion and extent of lithiation can depend on nanomaterial structure is important for the improvement of Si-based anodes. © 2011 American Chemical Society.

  9. Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

    Science.gov (United States)

    Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

    2011-02-02

    Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

  10. Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

    Directory of Open Access Journals (Sweden)

    Goyal Prabal

    2016-01-01

    Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

  11. Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

    Science.gov (United States)

    Li, Chenlei; Dai, Daoxin

    2017-11-01

    A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

  12. Analysis of signals propagating in a phononic crystal PZT layer deposited on a silicon substrate.

    Science.gov (United States)

    Hladky-Hennion, Anne-Christine; Vasseur, Jérôme; Dubus, Bertrand; Morvan, Bruno; Wilkie-Chancellier, Nicolas; Martinez, Loïc

    2013-12-01

    The design of a stop-band filter constituted by a periodically patterned lead zirconate titanate (PZT) layer, polarized along its thickness, deposited on a silicon substrate and sandwiched between interdigitated electrodes for emission/reception of guided elastic waves, is investigated. The filter characteristics are theoretically evaluated by using finite element simulations: dispersion curves of a patterned PZT layer with a specific pattern geometry deposited on a silicon substrate present an absolute stop band. The whole structure is modeled with realistic conditions, including appropriate interdigitated electrodes to propagate a guided mode in the piezoelectric layer. A robust method for signal analysis based on the Gabor transform is applied to treat transmitted signals; extract attenuation, group delays, and wave number variations versus frequency; and identify stop-band filter characteristics.

  13. Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

    International Nuclear Information System (INIS)

    Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

    2017-01-01

    Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

  14. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  15. The suitability of silicon carbide for photocatalytic water oxidation

    Science.gov (United States)

    Aslam, M.; Qamar, M. T.; Ahmed, Ikram; Rehman, Ateeq Ur; Ali, Shahid; Ismail, I. M. I.; Hameed, Abdul

    2018-04-01

    Silicon carbide (SiC), owing to its extraordinary chemical stability and refractory properties, is widely used in the manufacturing industry. Despite the semiconducting nature and morphology-tuned band gap, its efficacy as photocatalysts has not been thoroughly investigated. The current study reports the synthesis, characterization and the evaluation of the capability of silicon carbide for hydrogen generation from water splitting. The optical characterization of the as-synthesized powder exposed the formation of multi-wavelength absorbing entities in synthetic process. The structural analysis by XRD and the fine microstructure analysis by HRTEM revealed the cubic 3C-SiC (β-SiC) and hexagonal α-polymorphs (2H-SiC and 6H-SiC) as major and minor phases, respectively. The Mott-Schottky analysis verified the n-type nature of the material with the flat band potential of - 0.7 V. In the electrochemical evaluation, the sharp increase in the peak currents in various potential ranges, under illumination, revealed the plausible potential of the material for the oxidation of water and generation of hydrogen. The generation of hydrogen and oxygen, as a consequence of water splitting in the actual photocatalytic experiments, was observed and measured. A significant increase in the yield of hydrogen was noticed in the presence of methanol as h + scavenger, whereas a retarding effect was offered by the Fe3+ entities that served as e - scavengers. The combined effect of both methanol and Fe3+ ions in the photocatalytic process was also investigated. Besides hydrogen gas, the other evolved gasses such as methane and carbon monoxide were also measured to estimate the mechanism of the process.

  16. Growth and properties of epitaxial iron oxide layers

    NARCIS (Netherlands)

    Voogt, F.C; Fujii, T; Hibma, T; Zhang, G.L.; Smulders, P.J M

    1996-01-01

    Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or Fe-57 from Knudsen cells in the presence of a NO2 flow directed to the substrate. The resulting layers have been investigated in situ with LEED, RHEED, AES and XPS and ex situ with GEMS and ion beam

  17. TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Attard, D.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Finnie, K.S. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Triani, G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Barbe, C.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Depagne, C. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Bartlett, J.R. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2005-04-30

    Nanolaminate oxide layers consisting of TiO{sub 2} and Al{sub 2}O{sub 3} have been deposited on silicon using atomic layer deposition (ALD). Characterisation of these films has been achieved by use of a range of modern transmission electron microscopy (TEM)-based techniques, including plasmon loss imaging, energy filtered imaging and scanning TEM (STEM) X-ray line profiling. These have shown that the target thickness of the individual layers in the nanolaminate structures (20 nm) has been met with a high degree of accuracy, that the layers are extremely flat and parallel and that the interfaces between the layers are compositionally abrupt. Localised crystallisation within the stacks, and responses to electron beam irradiation point to the presence of a stress gradient within the layers. The performance of ellipsometry in characterising multilayer stacks has been benchmarked against the TEM measurements. Errors in determination of individual layer thicknesses were found to increase with growing stack size, as expected given the increasing number of interfaces incorporated in each model. The most sophisticated model gave maximum deviations of {+-}4 nm from the TEM determined values for the 5- and 10-layer stacks.

  18. New transport phenomena probed by dielectric spectroscopy of oxidized and non-oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Urbach, B.; Axelrod, E.; Sa' ar, A. [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2007-05-15

    Dielectric spectroscopy accompanied by infrared (IR) and photoluminescence (PL) spectroscopy have been utilized to reveal the correlation between transport, optical and structural properties of oxidized porous silicon (PS). Three relaxation processes at low-, mid- and high-temperatures were observed, including dc-conductivity at high-temperatures. Both the low-T relaxation and the dc conductivity were found to be thermally activated processes that involve tunneling and hopping in between the nanocrystals in oxidized PS. We have found that the dc-conductivity is limited by geometrical constrictions along the transport channels, which are not effected by the oxidation process and are characterized by activation energies of about {proportional_to}0.85 eV. The low-T relaxation process involves thermal activation followed by tunneling in between neighbor nanocrystals, with somewhat lower activation energies. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Measurement of mobility profile in ion-implanted silicon layers using electroreflection spectroscopy

    International Nuclear Information System (INIS)

    Galiev, G.B.; Kapaev, V.V.; Mokerov, V.G.

    1986-01-01

    The possibility is shown of the application of the low field linearized electroreflection spectroscopy for the measurement of profiles of carriers mobilities μ(x) simultaneously with the concentration profiles N(x) in thin ion-implanted silicon layers. The μ(χ) value is determined from the calibration curve of the dependence of the phenomenological broadening parameter γ on the mobility for uniformly doped samples. The results are presented for the measurements of the profiles μ(x) for boron- and arsenic-implanted silicon

  20. Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

    NARCIS (Netherlands)

    Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

    2002-01-01

    Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

  1. Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Birkelund, Karen; Grey, Francois

    1996-01-01

    on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer-scale patterns can...

  2. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  3. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

    Science.gov (United States)

    Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

    2018-01-23

    Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

  4. Method for forming indium oxide/n-silicon heterojunction solar cells

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  5. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon

    International Nuclear Information System (INIS)

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-01-01

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors

  6. Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

    1999-07-21

    Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

  7. Nitric oxide levels in the anterior chamber of vitrectomized eyes with silicon oil

    Directory of Open Access Journals (Sweden)

    Paulo Escarião

    2013-10-01

    Full Text Available PURPOSE: To investigate the nitric oxide levels in the anterior chamber of eyes who underwent pars plana vitrectomy (PPV with silicone oil. METHODS: Patients who underwent PPV with silicon oil injection, from february 2005 to august 2007, were selected. Nine patients (nine eyes participated in the study (five women and four men. Nitric oxide concentration was quantified after the aspiration of aqueous humor samples during the procedure of silicon oil removal. Data such as: oil emulsification; presence of oil in the anterior chamber; intraocular pressure and time with silicone oil were evaluated. Values of p <0.05 were considered to be statistically significant. RESULTS: A positive correlation between nitric oxide concentration and time with silicon oil in the vitreous cavity (r=0.799 was observed. The nitric oxide concentration was significantly higher (p=0.02 in patients with silicon oil more than 24 months (0.90µmol/ml ± 0.59, n=3 in the vitreous cavity comparing to patients with less than 24 months (0.19µmol/ml ± 0.10, n=6. CONCLUSION: A positive correlation linking silicone oil time in the vitreous cavity with the nitric oxide concentration in the anterior chamber was observed.

  8. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  9. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-01-01

    Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  10. Growth and characterization of oxide layers on zirconium alloys

    International Nuclear Information System (INIS)

    Maroto, A.J.G.; Bordoni, R.; Villegas, M.; Olmedo, A.M.; Blesa, M.A.; Iglesias, A.; Koenig, P.

    1996-01-01

    In the range 265-435 C Zr-2.5Nb corrosion takes place in two stages, as opposed to the cyclic behaviour of Zry-4. The Zry-4 corrosion stages are described by a single equation, in terms of the dense oxide layer thickness that decreases sharply at each transition. Tetragonal zirconia is present in the oxide layers of both alloys. In Zry-4, its volume fraction decreases as the oxide grows; it is barely discernible in Zr-2.5Nb in films below 1 μm, to later increase up to the transition. In both alloys, compressive stresses are developed associated with the oxide growth. Their relaxation at the transition correlates with the transformation of ZrO 2 (t) to ZrO 2 (m) and with the decrease of the dense oxide layer. In Zr-2.5Nb, oxide ridges form on the β-Zr phase filaments, at the very onset of film growth. The cyclic behaviour associated with the periodical breakdown of the dense oxide layer is therefore blurred, although optical microscopy shows that the scale retains the multilayered structure typical of Zry-4. (orig.)

  11. An RBS study of thin PLD and MOCVD strontium copper oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Kantor, Z. [Institute of Physics, University of Pannonia, H-8200 Veszprem (Hungary); Papadopoulou, E.L.; Aperathitis, E. [Inst. Electronic Struture and Laser, Foundation for Research and Technology - Hellas, P.O. Box 1527, Heraklion 71110 (Greece); Deschanvres, J.-L. [LMPG INP Grenoble-Minatec, BP 257, 38016 Grenoble Cedex 1 (France); Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

    2008-09-30

    Strontium copper oxide (SCO) has been studied as p-type transparent (VIS) conductive oxide material. Also theoretical studies suggested p-type conductivity of the SrCu{sub 2}O{sub 2} composition. SCO thin layers, with thicknesses of 30-2000 nm, were deposited on glass and silicon substrates both by pulsed laser deposition (PLD) and by MOCVD method. The as-grown layers showed high electrical resistance. Due to an annealing process, the resistivity significantly decreased and the layers showed p-type conductivity. Optical transparency measured on samples grown on glass substrates was found about or above 80%, including also thickness dependence. RBS measurements were applied for the determination of the chemical composition profile of the layers. A comparison revealed some specific differences between as-grown and annealed PLD samples. Due to the annealing, the ratio of oxide phases was changed and a vertical inhomogeneity in chemical composition was observed. Our measurements revealed also the influence of the deposition technique and of the substrate.

  12. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  13. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    International Nuclear Information System (INIS)

    Seyedzahedi, A.; Moradian, A.; Setare, M.R.

    2016-01-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  14. Intensifying the Casimir force between two silicon substrates within three different layers of materials

    Energy Technology Data Exchange (ETDEWEB)

    Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

    2016-04-01

    We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

  15. Adsorption and diffusion of lithium on layered silicon for Li-ion storage.

    Science.gov (United States)

    Tritsaris, Georgios A; Kaxiras, Efthimios; Meng, Sheng; Wang, Enge

    2013-05-08

    The energy density of Li-ion batteries depends critically on the specific charge capacity of the constituent electrodes. Silicene, the silicon analogue to graphene, being of atomic thickness could serve as high-capacity host of Li in Li-ion secondary batteries. In this work, we employ first-principles calculations to investigate the interaction of Li with Si in model electrodes of free-standing single-layer and double-layer silicene. More specifically, we identify strong binding sites for Li, calculate the energy barriers accompanying Li diffusion, and present our findings in the context of previous theoretical work related to Li-ion storage in other structural forms of silicon: the bulk and nanowires. The binding energy of Li is ~2.2 eV per Li atom and shows small variation with respect to Li content and silicene thickness (one or two layers) while the barriers for Li diffusion are relatively low, typically less than 0.6 eV. We use our theoretical findings to assess the suitability of two-dimensional silicon in the form of silicene layers for Li-ion storage.

  16. Graphene Oxide as a Monoatomic Blocking Layer

    DEFF Research Database (Denmark)

    Petersen, Søren; Glyvradal, Magni; Bøggild, Peter

    2012-01-01

    Monolayer graphene oxide (mGO) is shown to effectively protect molecular thin films from reorganization and function as an atomically thin barrier for vapor-deposited Ti/Al metal top electrodes. Fragile organic Langmuir–Blodgett (LB) films of C22 fatty acid cadmium salts (cadmium(II) behenate) were...

  17. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  18. Nafion/Silicon Oxide Composite Membrane for High Temperature Proton Exchange Membrane Fuel Cell

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate (TEOS) in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR, TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nafion membrane and the thermo stability of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. Furthermore, the tensile strength of Nafion/Silicon oxide composite membrane is similar to that of the Nafion membrane. The proton conductivity of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. When the Nafion/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value (1 000 mA/cm2 at 0.38 V) than that of the Nafion 1135 membrane (100 mA/cm2 at 0.04 V) was obtained at 110 ℃.

  19. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  20. Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

    International Nuclear Information System (INIS)

    Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

    2016-01-01

    The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

  1. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    International Nuclear Information System (INIS)

    Atyaoui, Malek; Dimassi, Wissem; Atyaoui, Atef; Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem

    2013-01-01

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n + emitter of silicon n + /p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties

  2. Improvement in photovoltaic properties of silicon solar cells with a doped porous silicon layer with rare earth (Ce, La) as antireflection coatings

    Energy Technology Data Exchange (ETDEWEB)

    Atyaoui, Malek, E-mail: atyaoui.malek@yahoo.fr [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95, Hammam Lif 2050 (Tunisia); Dimassi, Wissem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia); Atyaoui, Atef [Laboratoire de traitement des eaux usées, Centre de recherches et des technologies des eaux, technopole de Borj-Cédria, PB: 273, Soliman 8020 (Tunisia); Elyagoubi, Jalel; Ouertani, Rachid; Ezzaouia, Hatem [Laboratoire de Photovoltaïque, Centre de recherches et des technologies de l' energie, technopole de Borj-Cédria, PB:95,Hammam Lif 2050 (Tunisia)

    2013-09-15

    The performance improvement of solar cells due to the formation of a porous silicon layer treated with rare earth (Ce, La) in the n{sup +} emitter of silicon n{sup +}/p junctions has been investigated. The photovoltaic properties of the cells with and without treatment of the porous silicon layer are compared. From the reflection measurements, it was shown that the cells with treated PS layers have lower reflectivity value compared to cell with untreated PS layer. The main result is that the photovoltaic energy conversion efficiency of solar cells can be enhanced by using the treated porous silicon layers with the rare earth (Ce, La) as anti-reflection coatings. -- Highlights: • The reduction of optical loss in silicon (c-Si) solar cells attracts the attention of many researches to achieve high efficiencies. • To attain this aim, the treated PS layers with rare earth (La, Ce) are suggested to be used as an (ARC) of c-Si solar cell. • The result showed a decrease in the optical losses which can explain the improved photovoltaic properties.

  3. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

    2016-05-15

    Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

  4. Preparation and properties of novel epoxy/graphene oxide nanosheets (GON) composites functionalized with flame retardant containing phosphorus and silicon

    International Nuclear Information System (INIS)

    Li, Kuo-Yi; Kuan, Chen-Feng; Kuan, Hsu-Chiang; Chen, Chia-Hsun; Shen, Ming-Yuan; Yang, Jia-Ming; Chiang, Chin-Lung

    2014-01-01

    2-(Diphenylphosphino)ethyltriethoxy silane (DPPES) was grafted onto the surface of graphene oxide nanosheets (GON) via a condensation reaction. X-ray photoelectron spectroscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectroscopy verify that DPPES did not only covalently bond to GON as a functionalization moiety, but partly restored its conjugated structure as a reducing agent. DPPES on graphene sheets oxide was observed by transmission electron microscopy, and contributed to the favorable dispersion of DPPES-GON in nonpolar toluene. Additionally, the flame retardancy and thermal stability of epoxy/DPPES-GON nanocomposites that contain various weight fractions of DPPES-GON were studied using the limiting oxygen index test, UL-94 test and by thermogravimetric analysis in nitrogen. The composites containing 10 wt% DPPES-GON can pass V-0 rating in UL-94 test. Adding 10 wt% DPPES-GON in epoxy greatly increased the char yield and LOI by 42% and 80%, respectively. Epoxy/DPPES-GON nanocomposites with phosphorus, silicon and graphene layer structures were found to exhibit much greater flame retardancy than neat epoxy. The synergistic effects among silicon, phosphorus and GON can improve the flame retardancy of epoxy resin. - Highlights: • Flame retardant was grafted on the surface of graphene oxide nanosheets (GON) by the condensation reaction. • The synergistic effect between silicon, phosphorus and GON improved the flame retardance of epoxy resin. • Epoxy composites have excellent flame retardance at low additive concentrations

  5. Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

    International Nuclear Information System (INIS)

    Gastrow, Guillaume von; Li, Shuo; Putkonen, Matti; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

    2015-01-01

    Highlights: • The ALD Al 2 O 3 passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al 2 O 3 interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al 2 O 3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10 11 eV −1 cm −2 , and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

  6. Traps in Zirconium Alloys Oxide Layers

    Directory of Open Access Journals (Sweden)

    Helmar Frank

    2005-01-01

    Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

  7. The reactive element effect of yttrium and yttrium silicon on high temperature oxidation of NiCrAl coating

    Science.gov (United States)

    Ramandhany, S.; Sugiarti, E.; Desiati, R. D.; Martides, E.; Junianto, E.; Prawara, B.; Sukarto, A.; Tjahjono, A.

    2018-03-01

    The microstructure formed on the bond coat affects the oxidation resistance, particularly the formation of a protective oxide layer. The adhesion of bond coat and TGO increased significantly by addition of reactive element. In the present work, the effect of yttrium and yttrium silicon as reactive element (RE) on NiCrAl coating was investigated. The NiCrAl (without RE) and NiCrAlX (X:Y or YSi) bond coating were deposited on Hastelloy C-276 substrate by High Velocity Oxygen Fuel (HVOF) method. Isothermal oxidation was carried out at 1000 °C for 100 hours. The results showed that the addition of RE could prevent the breakaway oxidation. Therefore, the coating with reactive element were more protective against high temperature oxidation. Furthermore, the oxidation rate of NiCrAlY coating was lower than NiCrAlYSi coating with the total mass change was ±2.394 mg/cm2 after 100 hours of oxidation. The thickness of oxide scale was approximately 1.18 μm consisting of duplex oxide scale of spinel NiCr2O4 in outer scale and protective α-Al2O3 in inner scale.

  8. HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

    Energy Technology Data Exchange (ETDEWEB)

    Sturm, James [Princeton Univ., NJ (United States)

    2017-12-04

    This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

  9. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  10. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  11. Mass transfer model for two-layer TBP oxidation reactions

    International Nuclear Information System (INIS)

    Laurinat, J.E.

    1994-01-01

    To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. This report presents measurements of mass transfer rates for the mixing of water and butanol in two-layer, TBP-aqueous mixtures, where the top layer is primarily TBP and the bottom layer is comprised of water or aqueous salt solution. Mass transfer coefficients are derived for use in the modeling of two-layer TBP-nitric acid oxidation experiments. Three cases were investigated: (1) transfer of water into the TBP layer with sparging of both the aqueous and TBP layers, (2) transfer of water into the TBP layer with sparging of just the TBP layer, and (3) transfer of butanol into the aqueous layer with sparging of both layers. The TBP layer was comprised of 99% pure TBP (spiked with butanol for the butanol transfer experiments), and the aqueous layer was comprised of either water or an aluminum nitrate solution. The liquid layers were air sparged to simulate the mixing due to the evolution of gases generated by oxidation reactions. A plastic tube and a glass frit sparger were used to provide different size bubbles. Rates of mass transfer were measured using infrared spectrophotometers provided by SRTC/Analytical Development

  12. Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

    2014-01-01

    A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

  13. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  14. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  15. Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

    Science.gov (United States)

    Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-12-03

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  16. Low-temperature atomic layer deposition of MoO{sub x} for silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Macco, B.; Vos, M.F.J.; Thissen, N.F.W.; Bol, A.A. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

    2015-07-15

    The preparation of high-quality molybdenum oxide (MoO{sub x}) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 C. The films are amorphous, slightly substoichiometric with respect to MoO{sub 3}, and free of other elements apart from hydrogen (<11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO{sub x} in hole-selective contacts for silicon heterojunction solar cells. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1999-01-01

    Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

  18. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    International Nuclear Information System (INIS)

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1994-01-01

    Hydrogenated amorphous carbon or diamondlike carbon (DLC) films were formed by 400 eV methane (CH 4 ) ion bombardment of various smooth and rough ceramics, as well as ceramics coated with a layer of Si or Ti. Adhesion was measured by a bonded-pin method. Excellent adhesion was measured for smooth SiC and Si 3 N 4 , but adhesion of DLC to smooth Al 2 O 3 and ZrO 2 was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective due to poor bonding between the DLC film and Ti. Bulk thermodynamic calculations are not directly applicable to bonding at the interface because the interface is two dimensional and the compositions of interfacial phases are generally not known. If the standard enthalpy ΔH degree for the reaction between CH 4 and the substrate material is calculated under the assumption that a carbide phase is produced, a relationship is seen between the reaction enthalpy and the relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. The lack of adhesion to the Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for the reaction with CH 4 positive

  19. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  20. Wear characteristics of TiO[sub 2] coating and silicon carbide alloyed layer on Ti-6Al-4V material

    Energy Technology Data Exchange (ETDEWEB)

    Karamis, M.B. (Dept. of Mechanical Engineering, Erciyes Univ., Kayseri (Turkey))

    1992-08-14

    Wear properties of Ti-6Al-4V material (IMI-318) TiO[sub 2] coated and electron beam alloyed with silicon carbide were tested. Thickness of oxide coating, alloying conditions and properties of the alloyed layer such as hardness, layer thickness and microstructure are described. Wear tests were carried out on a general-purpose wear machine by using a disc-disc sample configuration under lubricated conditions. Counterface materials to oxide-coated and to surface-alloyed specimens were plasma-nitrided AISI 51100 and hardened AISI 4140 respectively. The resulting weight loss and wear resistance were monitored as a function of sliding distance and applied load. Although the electron beam alloying improved the wear resistance of Ti-6Al-4V material, the oxide coatings on the material were not resistant to wear. (orig.).

  1. Accelerating action of stresses on crystallization kinetics in silicon ion-implanted layers during pulsed heating

    International Nuclear Information System (INIS)

    Aleksandrov, L.N.

    1985-01-01

    Numerical simulation of the effect of stressed in ion-implanted layers on kinetics of amorphous phase transformations is performed. The suggested model of accounting stresses including concentration ones is based on the locality of action of interstitial addition atoms and on general structural inhomogeneity of amorphous semiconductor leading to the formation of areas of the facilitated phase transition. Accounting of effect of energy variation of silicon atoms interaction on probability of displacement events and atoms building in lattice points or atomic bonds disintegration allows one to trace the accelerating action of introduced by ion implantation stresses on the kinetics of layer crystallization during pulsed heating

  2. Solid oxide fuel cell cathode with oxygen-reducing layer

    Science.gov (United States)

    Surdoval, Wayne A.; Berry, David A.; Shultz, Travis

    2018-04-03

    The disclosure provides a SOFC comprised of an electrolyte, anode, and cathode, where the cathode comprises an MIEC and an oxygen-reducing layer. The oxygen-reducing layer is in contact with the MIEC, and the MIEC is generally between and separating the oxygen-reducing layer and the electrolyte. The oxygen-reducing layer is comprised of single element oxides, single element carbonates, or mixtures thereof, and has a thickness of less than about 30 nm. In a particular embodiment, the thickness is less than 5 nm. In another embodiment, the thickness is about 3 monolayers or less. The oxygen-reducing layer may be a continuous film or a discontinuous film with various coverage ratios. The oxygen-reducing layer at the thicknesses described may be generated on the MIEC surface using means known in the art such as, for example, ALD processes.

  3. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  4. 18O isotopic tracer studies of silicon oxidation in dry oxygen

    International Nuclear Information System (INIS)

    Han, C.J.

    1986-01-01

    Oxidation of silicon in dry oxygen has been an important process in the integrated circuit industry for making gate insulators on metal-oxide-semiconductory (MOS) devices. This work examines this process using isotopic tracers of oxygen to determine the transport mechanisms of oxygen through silicon dioxide. Oxides were grown sequentially using mass-16 and mass-18 oxygen gas sources to label the oxygen molecules from each step. The resulting oxides are analyzed using secondary ion mass spectrometry (SIMS). The results of these analyses suggest two oxidant species are present during the oxidation, each diffuses and oxidizes separately during the process. A model from this finding using a sum of two linear-parabolic growth rates, each representing the growth rate from one of the oxidants, describes the reported oxidation kinetics in the literature closely. A fit of this relationship reveals excellent fits to the data for oxide thicknesses ranging from 30 A to 1 μm and for temperatures ranging from 800 to 1200 0 C. The mass-18 oxygen tracers also enable a direct observation of the oxygen solubility in the silicon dioxide during a dry oxidation process. The SIMS profiles establish a maximum solubility for interstitial oxygen at 1000 0 C at 2 x 10 20 cm -3 . Furthermore, the mass-18 oxygen profiles show negligible network diffusion during an 1000 0 C oxidation

  5. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  6. Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

    2010-12-15

    The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

  7. Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

    Science.gov (United States)

    Bansen, R.; Ehlers, C.; Teubner, Th.; Boeck, T.

    2016-09-01

    The growth of polycrystalline silicon layers on glass from tin solutions at low temperatures is presented. This approach is based on the steady-state solution growth of Si crystallites on nanocrystalline seed layers, which are prepared in a preceding process step. Scanning electron microscopy and atomic force microscopy investigations reveal details about the seed layer surfaces, which consist of small hillocks, as well as about Sn inclusions and gaps along the glass substrate after solution growth. The successful growth of continuous microcrystalline Si layers with grain sizes up to several ten micrometers shows the feasibility of the process and makes it interesting for photovoltaics. Project supported by the German Research Foundation (DFG) (No. BO 1129/5-1).

  8. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    Science.gov (United States)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  9. Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

    1986-01-01

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

  10. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  11. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    Science.gov (United States)

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  12. Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

    Science.gov (United States)

    Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

    2003-12-31

    Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

  13. Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

    Science.gov (United States)

    Kao, Wei-Chieh

    Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

  14. High Temperature Oxidation Behavior of Zirconium Alloy with Nano structured Oxide Layer in Air Environment

    International Nuclear Information System (INIS)

    Park, Y. J.; Kim, J. W.; Park, J. W.; Cho, S. O.

    2016-01-01

    If the temperature of the cladding materials increases above 1000 .deg. C, which can be caused by a loss of coolant accident (LOCA), Zr becomes an auto-oxidation catalyst and hence produces a huge amount of hydrogen gas from water. Therefore, many investigations are being carried out to prevent (or reduce) the hydrogen production from Zr-based cladding materials in the nuclear reactors. Our team has developed an anodization technique by which nanostructured oxide can be formed on various flat metallic elements such as Al, Ti, and Zr-based alloy. Anodization is a simple electrochemical technique and requires only a power supply and an electrolyte. In this study, Zr-based alloys with nanostructured oxide layers were oxidized by using Thermogravimetry analysis (TGA) and compared with the pristine one. It reveals that the nanostructured oxide layer can prevent oxidation of substrate metal in air. Oxidation behavior of the pristine Zr-Nb-Sn alloy and the Zr-Nb-Sn alloy with nanostructured oxide layer evaluated by measuring weight gain (TGA). In comparison with the pristine Zr-Nb-Sn alloy, weight gain of the Zr-Nb-Sn alloy with nanostructured oxide layer is lower than 10% even for 12 hours oxidation in air.

  15. The effect of silicon content on high temperature oxidation of 80Ni-20Cr alloys

    International Nuclear Information System (INIS)

    Takei, Atsushi; Nii, Kazuyoshi

    1981-01-01

    The effect of Si content on the oxidation behavior of 80Ni-20Cr alloys has been studied in the cyclic oxidation in an air stream at 1373K. The addition of 1% and 5%Si to the alloy lowered the mass gain in oxidation, whereas the amount of spalling of oxide scale was increased with the addition of Si. The structure of oxide layers observed by microphotography, X-ray diffraction and electron probe microanalysis (EPMA) were different with the Si content of alloys. The oxide layer of the alloy with 1%Si consists of multi-layers, that is Ni oxide, Cr 2 O 3 and SiO 2 as the external oxide layer. The oxide layer remaining on the alloy with 5%Si, however, was made of a single oxide layer of Cr 2 O 3 containing small amounts of Si and Ni. In spite of the fact that the amount of Si in this alloy is larger than that of the alloy with 1%Si, the SiO 2 oxide layer was not observed at the oxide-alloy interface. It was found by EPMA that the concentration of Si in the oxidized 5%Si alloy substrate was increased in the vicinity of the surface, although Si in the 1%Si alloy was depleted. From the above results the internal oxidation of Si is assumed in the near-surface region of the 5%Si alloy. The internal oxidation of the 5%Si alloy was confirmed by an increase in hardness in the near-surface region. The difference in oxidation behavior between the 1%Si and 5%Si alloys can be understood under the assumption that the oxide layer formed of the 5%Si alloy contained much larger amounts of Ni and Si than that on the 1%Si alloy, and that this oxide layer tends to crack more easily, thus being less protective for the penetration of oxygen. (author)

  16. Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

    International Nuclear Information System (INIS)

    Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

    2017-01-01

    By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

  17. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  18. Super-oxidation of silicon nanoclusters: magnetism and reactive oxygen species at the surface

    Energy Technology Data Exchange (ETDEWEB)

    Lepeshkin, Sergey; Baturin, Vladimir; Tikhonov, Evgeny; Matsko, Nikita; Uspenskii, Yurii; Naumova, Anastasia; Feya, Oleg; Schoonen, Martin A.; Oganov, Artem R.

    2016-01-01

    Oxidation of silicon nanoclusters depending on the temperature and oxygen pressure is explored from first principles using the evolutionary algorithm, and structural and thermodynamic analysis. From our calculations of 90 SinOm clusters we found that under normal conditions oxidation does not stop at the stoichiometric SiO2 composition, as it does in bulk silicon, but goes further placing extra oxygen atoms on the cluster surface. These extra atoms are responsible for light emission, relevant to reactive oxygen species and many of them are magnetic. We argue that the super-oxidation effect is size-independent and discuss its relevance to nanotechnology and miscellaneous applications, including biomedical ones.

  19. Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu; Gouker, Pascale M.

    2013-09-01

    Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd{sub 2}O{sub 3} than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron–hole recombination or conversion electron loss in interconnect wiring above the transistors. -- Highlights: • A novel Gd{sub 2}O{sub 3} coated FDSOI MOSFET thermal neutron dosimeter is presented. • Dosimeter can detect charges generated from {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. • Measured neutron sensitivity is comparable to that calculated theoretically. • Dosimeter requires zero power during operation, enabling new application areas.

  20. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  1. Tunable band structures in digital oxides with layered crystal habits

    Science.gov (United States)

    Shin, Yongjin; Rondinelli, James M.

    2017-11-01

    We use density functional calculations to show that heterovalent cation-order sequences enable control over band-gap variations up to several eV and band-gap closure in the bulk band insulator LaSrAlO4. The band-gap control originates from the internal electric fields induced by the digital chemical order, which induces picoscale band bending; the electric-field magnitude is mainly governed by the inequivalent charged monoxide layers afforded by the layered crystal habit. Charge transfer and ionic relaxations across these layers play secondary roles. This understanding is used to construct and validate a descriptor that captures the layer-charge variation and to predict changes in the electronic gap in layered oxides exhibiting antisite defects and in other chemistries.

  2. Effect of yttrium on the oxide scale adherence of pre-oxidized silicon-containing heat-resistant alloy

    International Nuclear Information System (INIS)

    Yan Jingbo; Gao Yimin; Shen Yudi; Yang Fang; Yi Dawei; Ye Zhaozhong; Liang Long; Du Yingqian

    2011-01-01

    Highlights: → AE experiment shows yttrium has a beneficial effect on the pre-oxidized HP40 alloy. → Yttrium facilitates the formation of internal oxide after 10 h of oxidation. → Internal oxide changes the rupture behaviour of the oxide scale. → Twins form in the internal oxide and improve the binding strength of the scale. - Abstract: This paper investigates the effect of the rare earth element yttrium on the rupture behaviour of the oxide scale on the silicon-containing heat-resistant alloy during cooling. After 10 h of oxidation, yttrium is found to facilitate the formation of internal oxides (silica) at the scale-matrix interface. Due to the twinning observed by scanning transmission electron microscopy (STEM) in silica, the critical strain value for the scale failure can be dramatically improved, and the formation of cracks at the scale-matrix interface is inhibited.

  3. Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

    Institute of Scientific and Technical Information of China (English)

    Yu-qing Song; Xiao-ping Wang

    2017-01-01

    We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted,diminishing the influence induced by residue and transfer technology.It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate,compared to that coated with the bilayer graphene,which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene,respectively.We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection.Our finding indicates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects,depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.

  4. Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone

    Science.gov (United States)

    Horita, Susumu; Jain, Puneet

    2017-08-01

    A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N2 gas flow. The increase is more than 3 times that observed without TCE, and any contamination due to TCE is hardly observed in the deposited Si oxide films from Fourier transform infrared spectra.

  5. Beam test of a dual layer silicon charge detector (SCD) for the CREAM experiment

    International Nuclear Information System (INIS)

    Park, N.H.; Ahn, H.S.; Ganel, O.; Han, J.H.; Jeon, J.A.; Kim, C.H.; Kim, K.C.; Lutz, L.; Lee, M.H.; Malinin, A.; Nam, S.; Park, I.H.; Park, J.H.; Seo, E.S.; Walpole, P.; Wu, J.; Yang, J.; Yoo, J.H.; Yoon, Y.S.; Zinn, S.Y.

    2007-01-01

    The Cosmic Ray Energetics and Mass (CREAM) balloon-borne experiment is designed for direct measurement of high-energy cosmic rays. The experimental goal is to measure single-element fluxes of all cosmic-ray nuclei from hydrogen to iron with energies up to the 'knee', or spectral index change near 10 15 eV, observed in the all-particle spectrum. The dual layer Silicon Charge Detector (SCD) was designed to provide precise charge measurements. Each SCD layer has an active area of 77.9cmx79.5cm and consists of 156 silicon sensors mounted on 24 ladders. Each sensor contains a 4 x 4 array of single-sided DC type silicon pixels with an active area of 2.1cm 2 . The detector was flown on the second CREAM flight (December 2005-January 2006) and recovered successfully. The SCD was refurbished for the third CREAM flight and tested with high-energy electron and hadron beams at CERN. This paper reports on the performance of the SCD during the beam test

  6. Electrochemical lithiation of thin silicon based layers potentiostatically deposited from ionic liquid

    International Nuclear Information System (INIS)

    Vlaic, Codruta Aurelia; Ivanov, Svetlozar; Peipmann, Ralf; Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan; Bund, Andreas

    2015-01-01

    Thin silicon layers containing about 20% carbon and 20% oxygen were deposited on copper substrates by potentiostatic electroreduction from a 1 M SiCl 4 1-butyl-1-methyl-pyrrolidinium bis (trifluoromethyl) sulfonylimide [BMP][TFSI] electrolyte. The electrodeposition process was investigated by means of voltammetric techniques, coupled with in-situ microgravimetry (quartz crystal microbalance, QCM). The electrochemical and QCM data suggest a possible contribution of a partial Si 4+ to Si 2+ reduction and/or a restructuring of the metallic substrate. Considerable impact of side reactions parallel to the deposition process was indicated by QCM measurements performed under potentiostatic and potentiodynamic conditions. The deposition of silicon-based films was confirmed by energy dispersive X-ray analysis (EDX). Analysis of the chemical composition of the deposit and its elemental distribution were achieved by depth profiling X-ray photoelectron spectroscopy (XPS). The electrodeposited silicon containing layers showed stable lithiation and delithiation with capacity values of about 1200 mAhg −1 and 80% capacity retention after 300 cycles in standard EC/DMC electrolytes. In ionic liquid (IL) the material displayed lower capacity of ca. 500 mAhg −1 , which can be attributed to the higher viscosity of this electrolyte and deposition of IL decomposition products during lithiation

  7. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  8. Chemical gating of epitaxial graphene through ultrathin oxide layers.

    Science.gov (United States)

    Larciprete, Rosanna; Lacovig, Paolo; Orlando, Fabrizio; Dalmiglio, Matteo; Omiciuolo, Luca; Baraldi, Alessandro; Lizzit, Silvano

    2015-08-07

    We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

  9. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    International Nuclear Information System (INIS)

    Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

    2010-01-01

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  10. Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2010-02-15

    In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

  11. Sponge-like reduced graphene oxide/silicon/carbon nanotube composites for lithium ion batteries

    Science.gov (United States)

    Fang, Menglu; Wang, Zhao; Chen, Xiaojun; Guan, Shiyou

    2018-04-01

    Three-dimensional sponge-like reduced graphene oxide/silicon/carbon nanotube composites were synthesized by one-step hydrothermal self-assembly using silicon nanoparticles, graphene oxide and amino modified carbon nanotubes to develop high-performance anode materials of lithium ion batteries. Scanning electron microscopy and transmission electron microscopy images show the structure of composites that Silicon nanoparticles are coated with reduced graphene oxide while amino modified carbon nanotubes wrap around the reduced graphene oxide in the composites. When applied to lithium ion battery, these composites exhibit high initial specific capacity of 2552 mA h/g at a current density of 0.05 A/g. In addition, reduced graphene oxide/silicon/carbon nanotube composites also have better cycle stability than bare Silicon nanoparticles electrode with the specific capacity of 1215 mA h/g after 100 cycles. The three-dimension sponge-like structure not only ensures the electrical conductivity but also buffers the huge volume change, which has broad potential application in the field of battery.

  12. Covalent Surface Modification of Silicon Oxides with Alcohols in Polar Aprotic Solvents.

    Science.gov (United States)

    Lee, Austin W H; Gates, Byron D

    2017-09-05

    Alcohol-based monolayers were successfully formed on the surfaces of silicon oxides through reactions performed in polar aprotic solvents. Monolayers prepared from alcohol-based reagents have been previously introduced as an alternative approach to covalently modify the surfaces of silicon oxides. These reagents are readily available, widely distributed, and are minimally susceptible to side reactions with ambient moisture. A limitation of using alcohol-based compounds is that previous reactions required relatively high temperatures in neat solutions, which can degrade some alcohol compounds or could lead to other unwanted side reactions during the formation of the monolayers. To overcome these challenges, we investigate the condensation reaction of alcohols on silicon oxides carried out in polar aprotic solvents. In particular, propylene carbonate has been identified as a polar aprotic solvent that is relatively nontoxic, readily accessible, and can facilitate the formation of alcohol-based monolayers. We have successfully demonstrated this approach for tuning the surface chemistry of silicon oxide surfaces with a variety of alcohol containing compounds. The strategy introduced in this research can be utilized to create silicon oxide surfaces with hydrophobic, oleophobic, or charged functionalities.

  13. Characterization of Zircaloy-4 oxide layers by impedance spectroscopy

    International Nuclear Information System (INIS)

    Barberis, P.

    1999-01-01

    Two Zircaloy-4 type alloys with different tin contents (0.5 and 1.2 wt%) have been oxidized in autoclave (400 C in steam) for several durations (1-140 days). The film has been characterized by electrochemical impedance spectroscopy (EIS). Several soaking times have been investigated (up to 40 days). The Cole-Cole representation has been used to display and study the data. A simple electrical model has been derived from the observed spectra: the electrical circuit includes two RC loops in series, whose capacitances are frequency dispersed. It is thoroughly related to the layer structure. It has been shown that even before the kinetic transition, the film is constituted of three parts: an inner layer which is compact, an outer layer subdivided in an external region immediately soaked by the electrolyte, and an internal one in which electrolyte diffusion processes can take place. The kinetic transition is interpreted in terms of an abrupt 'compacity' change, both layers degrading at this point. The alloy with high tin content exhibits higher dispersive properties of the oxide layer formed on it, in correlation with its faster oxidation kinetics. (orig.)

  14. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  15. Usage of neural network to predict aluminium oxide layer thickness.

    Science.gov (United States)

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

  16. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    Directory of Open Access Journals (Sweden)

    Peter Michal

    2015-01-01

    Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

  17. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  18. Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium-Protected n+p-Silicon Photocathode

    DEFF Research Database (Denmark)

    Seger, Brian; Laursen, Anders Bo; Vesborg, Peter Christian Kjærgaard

    2012-01-01

    A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n+p-silicon electrode. This electrode was applied as a photocathode for wat...

  19. Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

    Science.gov (United States)

    Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

    2017-10-01

    In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

  20. Development of examination technique for oxide layer thickness measurement of irradiated fuel rods

    International Nuclear Information System (INIS)

    Koo, D. S.; Park, S. W.; Kim, J. H.; Seo, H. S.; Min, D. K.; Kim, E. K.; Chun, Y. B.; Bang, K. S.

    1999-06-01

    Technique for oxide layer thickness measurement of irradiated fuel rods was developed to measure oxide layer thickness and study characteristic of fuel rods. Oxide layer thickness of irradiated fuels were measured, analyzed. Outer oxide layer thickness of 3 cycle-irradiated fuel rods were 20 - 30 μm, inner oxide layer thickness 0 - 10 μm and inner oxide layer thickness on cracked cladding about 30 μm. Oxide layer thickness of 4 cycle-irradiated fuel rods were about 2 times as thick as those of 1 cycle-irradiated fuel rods. Oxide layer on lower region of irradiated fuel rods was thin and oxide layer from lower region to upper region indicated gradual increase in thickness. Oxide layer thickness from 2500 to 3000 mm showed maximum and oxide layer thickness from 3000 to top region of irradiated fuel rods showed decreasing trend. Inner oxide layer thicknesses of 4 cycle-irradiated fuel rod were about 8 μm at 750 - 3500 mm from the bottom end of fuel rod. Outer oxide layer thickness were about 8 μm at 750 - 1000 mm from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel. Oxide layer thickness technique will apply safety evaluation and study of reactor fuels. (author). 6 refs., 14 figs

  1. A novel and efficient oxidative functionalization of lignin by layer-by-layer immobilised Horseradish peroxidase.

    Science.gov (United States)

    Perazzini, Raffaella; Saladino, Raffaele; Guazzaroni, Melissa; Crestini, Claudia

    2011-01-01

    Horseradish peroxidase (HRP) was chemically immobilised onto alumina particles and coated by polyelectrolytes layers, using the layer-by-layer technique. The reactivity of the immobilised enzyme was studied in the oxidative functionalisation of softwood milled wood and residual kraft lignins and found higher than the free enzyme. In order to investigate the chemical modifications in the lignin structure, quantitative (31)P NMR was used. The immobilised HRP showed a higher reactivity with respect to the native enzyme yielding extensive depolymerisation of lignin. Copyright © 2010 Elsevier Ltd. All rights reserved.

  2. Interface Controlled Oxidation States in Layered Cobalt Oxide Nanoislands on Gold

    DEFF Research Database (Denmark)

    Walton, Alexander; Fester, Jakob; Bajdich, Michal

    2015-01-01

    Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER; half of the catalytic “water splitting” reaction), particularly when promoted with gold. However, the surface chemistry of cobalt oxides and in particular the nature of the synergistic effect...

  3. Study of oxide layers in creep of Ti alloy

    International Nuclear Information System (INIS)

    Reis, D.A.P.; Moura Neto, C.; Machado, J.P.B.; Martins, G.V.; Barboza, M.J.R.

    2009-01-01

    The present study is about the effect of oxide layers in creep of Ti-6Al-4V alloy, in different atmospheres (air, nitrogen and argon). Ti-6Al-4V alloy was treated during 24 hours in a thermal treatment furnace at 600°C in different atmospheres (argon, nitrogen and air). The samples were analyzed by High Resolution X-Ray Diffraction, Scanning Electronic Microscopy (SEM), Atomic Force Microscopy (AFM) and microhardness test. The polished samples of Ti-6Al-4V alloy were treated during 24 hours at 600°C and the oxidation behavior in each case using argon, nitrogen and air atmospheres was observed. The oxidation was more aggressive in air atmosphere, forming TiO 2 film in the surface. The oxidation produced a weight gain through the oxide layer growth and hardening by oxygen dissolution. Ti-6Al-4V alloy specimens also were produced in order to test them in creep, at 250 MPa and 600 deg C, with argon, nitrogen and air atmospheres. When the Ti-6Al-4V alloy was tested under argon and nitrogen atmospheres oxidation effects are smaller and the behavior of the creep curves shows that the creep life time was better in atmospheres not so oxidant. It is observed a decreasing of steady state creep in function of the oxidation process reduction. It is shown that, for the Ti-6Al-4V alloy, their useful life is strongly affected by the atmosphere that is submitted, on account of the oxidation suffered by the material. (author)

  4. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Science.gov (United States)

    Weiying, Ou; Lei, Zhao; Hongwei, Diao; Jun, Zhang; Wenjing, Wang

    2011-05-01

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

  5. Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Ou Weiying; Zhao Lei; Diao Hongwei; Zhang Jun; Wang Wenjing, E-mail: wjwangwj@126.com [Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-05-15

    Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells. (semiconductor technology)

  6. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  7. Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers.

    Science.gov (United States)

    Mariani, Stefano; Strambini, Lucanos Marsilio; Barillaro, Giuseppe

    2018-03-23

    Herein, we provide the first experimental evidence on the use of electrical double layer (EDL)-induced accumulation of charged ions (using both Na + and K + ions in water as the model) onto a negatively charged nanostructured surface (e.g., thermally growth SiO 2 )-Ion Surface Accumulation, ISA-as a means of improving performance of nanostructured porous silicon (PSi) interferometers for optical refractometric applications. Nanostructured PSi interferometers are very promising optical platforms for refractive index sensing due to PSi huge specific surface (hundreds of m 2 per gram) and low preparation cost (less than $0.01 per 8 in. silicon wafer), though they have shown poor resolution ( R) and detection limit (DL) (on the order of 10 -4 -10 -5 RIU) compared to other plasmonic and photonic platforms ( R and DL on the order of 10 -7 -10 -8 RIU). This can be ascribed to both low sensitivity and high noise floor of PSi interferometers when bulk refractive index variation of the solution infiltrating the nanopores either approaches or is below 10 -4 RIU. Electrical double layer-induced ion surface accumulation (EDL-ISA) on oxidized PSi interferometers allows the interferometer output signal (spectral interferogram) to be impressively amplified at bulk refractive index variation below 10 -4 RIU, increasing, in turn, sensitivity up to 2 orders of magnitude and allowing reliable measurement of refractive index variations to be carried out with both DL and R of 10 -7 RIU. This represents a 250-fold-improvement (at least) with respect to the state-of-the-art literature on PSi refractometers and pushes PSi interferometer performance to that of state-of-the-art ultrasensitive photonics/plasmonics refractive index platforms.

  8. Strengthening of oxidation resistant materials for gas turbine applications. [treatment of silicon ceramics for increased flexural strength and impact resistance

    Science.gov (United States)

    Kirchner, H. P.

    1974-01-01

    Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.

  9. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  10. Analysis and optimization of acoustic wave micro-resonators integrating piezoelectric zinc oxide layers

    Science.gov (United States)

    Mortada, O.; Zahr, A. H.; Orlianges, J.-C.; Crunteanu, A.; Chatras, M.; Blondy, P.

    2017-02-01

    This paper reports on the design, simulation, fabrication, and test results of ZnO-based contour-mode micro-resonators integrating piezoelectric zinc oxide (ZnO) layers. The inter-digitated (IDT) type micro-resonators are fabricated on ZnO films and suspended top of 2 μm thick silicon membranes using silicon-on insulator technology. We analyze several possibilities of increasing the quality factor (Q) and the electromechanical coupling coefficient (kt2) of the devices by varying the numbers and lengths of the IDT electrodes and using different thicknesses of the ZnO layer. We designed and fabricated IDTs of different finger numbers (n = 25, 40, 50, and 80) and lengths (L = 100/130/170/200 μm) for three different thicknesses of ZnO films (200, 600, and 800 nm). The measured Q factor confirms that reducing the length and the number of IDT fingers enables us to reach better electrical performances at resonant frequencies around 700 MHz. The extracted results for an optimized micro-resonator device having an IDT length of 100 μm and 40 finger electrodes show a Q of 1180 and a kt2 of 7.4%. We demonstrate also that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600, respectively, around 700 MHz. Experimental data are in very good agreement with theoretical simulations of the fabricated devices

  11. Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

    International Nuclear Information System (INIS)

    Deilmann, Michael; Grabowski, Mirko; Theiss, Sebastian; Bibinov, Nikita; Awakowicz, Peter

    2008-01-01

    Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiO x coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiO x C y H z layers to quartz-like SiO 1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm 3 m -2 day -1 bar -1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy E p of oxygen permeation is analysed and a strong increase from E p = 31.5 kJ mol -1 for SiO x C y H z -like coatings to E p = 53.7 kJ mol -1 for SiO 1.7 films is observed by increasing the oxygen dilution of HMDSO:O 2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm -2 is revealed

  12. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  13. Silicon-depth profiling with Rutherford backscattering in photoresist layers; a study on the effects of degradation

    NARCIS (Netherlands)

    IJzendoorn, van L.J.; Schellekens, J.P.W.

    1989-01-01

    The reaction of a silicon-containing vapor with a photoresist layer, as used in some dry developable lithographic processes, was studied with Rutherford backscattering spectrometry. Degradation of the polymer layer under ion beam irradiation was observed, but it was found that this had no influence

  14. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  15. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  16. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  17. Damage induced by high energy multiply charged oxygen ions in oxide coated silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kulkarni, V.R. [Department of Physics, University of Pune, Pune 411 007 (India); Bogle, K.A. [Department of Physics, University of Pune, Pune 411 007 (India); Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India)

    2006-03-15

    P-type oxide coated silicon samples of resistivity 120 {omega} cm were irradiated with 60 MeV oxygen ions of fixed charge states 4{sup +}, 5{sup +}, 6{sup +} and 7{sup +} at an equal fluence of, {phi}, {approx}10{sup 13} ions/cm{sup 2}. The induced damage was estimated by Hall voltage, Hall coefficient, carrier concentration and lifetime of minority carriers. The results indicate that Hall voltage (V {sub H}) and Hall coefficient (R {sub H}) increases, while carrier concentration (n) decreases with the charge state of impinging oxygen ions. The V {sub H} increases from 22 mV to 76.5 mV at typical current of 0.5 mA, R {sub H} from 0.42 x 10{sup 5} cm{sup 3}/C to 2.16 x 10{sup 5} cm{sup 3}/C and n decreases from 9 x 10{sup 13} cm{sup -3} to 2.88 x 10{sup 13} cm{sup -3} for the different charge states. This fact is an evidence that the oxygen ions with an individual fixed charge state passing through very thin 40 A layer of silicon dioxide, induces significant damage at the SiO{sub 2}-Si interface through the mechanism of electronic stopping power. The lifetime of minority charge carriers, {tau} (bulk property), remains constant at around 6 {mu}s for all the charge states of the 60 MeV energy oxygen ion irradiated samples at a constant fluence of, {phi}, 10{sup 13} ions/cm{sup 2}.

  18. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

  19. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    2014-01-01

    Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding...... short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account...

  20. Lithium-storage Properties of Gallic Acid-Reduced Graphene Oxide and Silicon-Graphene Composites

    International Nuclear Information System (INIS)

    Xu, Binghui; Zhang, Jintao; Gu, Yi; Zhang, Zhi; Al Abdulla, Wael; Kumar, Nanjundan Ashok; Zhao, X.S.

    2016-01-01

    Graphene oxide (GO) was de-oxygenated using gallic acid under mild conditions to prepare reduced graphene oxide (RGO). The resultant RGO showed a lithium-ion storage capacity of 1280 mA h g −1 at a current density of 200 mA g −1 after 350 cycles when used as an anode for lithium ion batteries. The RGO was further used to stabilize silicon (Si) nanoparticles to prepare silicon-graphene composite electrode materials. Experimental results showed that a composite electrode prepared with a mass ratio of Si:GO = 1:2 exhibited the best lithium ion storage performance.

  1. Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

    International Nuclear Information System (INIS)

    Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

    2008-01-01

    We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

  2. Characterization of Ag-porous silicon nanostructured layer formed by an electrochemical etching of p-type silicon surface for bio-application

    Science.gov (United States)

    Naddaf, M.; Al-Mariri, A.; Haj-Mhmoud, N.

    2017-06-01

    Nanostructured layers composed of silver-porous silicon (Ag-PS) have been formed by an electrochemical etching of p-type (1 1 1) silicon substrate in a AgNO3:HF:C2H5OH solution at different etching times (10 min-30 min). Scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) results reveal that the produced layers consist of Ag dendrites and a silicon-rich porous structure. The nanostructuring nature of the layer has been confirmed by spatial micro-Raman scattering and x-ray diffraction techniques. The Ag dendrites exhibit a surface-enhanced Raman scattering (SERS) spectrum, while the porous structure shows a typical PS Raman spectrum. Upon increasing the etching time, the average size of silicon nanocrystallite in the PS network decreases, while the average size of Ag nanocrystals is slightly affected. In addition, the immobilization of prokaryote Salmonella typhimurium DNA via physical adsorption onto the Ag-PS layer has been performed to demonstrate its efficiency as a platform for detection of biological molecules using SERS.

  3. Fabrication of contacts for silicon solar cells including printing burn through layers

    Science.gov (United States)

    Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

    2014-06-24

    A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

  4. Interfacial bonding stabilizes rhodium and rhodium oxide nanoparticles on layered Nb oxide and Ta oxide supports.

    Science.gov (United States)

    Strayer, Megan E; Binz, Jason M; Tanase, Mihaela; Shahri, Seyed Mehdi Kamali; Sharma, Renu; Rioux, Robert M; Mallouk, Thomas E

    2014-04-16

    Metal nanoparticles are commonly supported on metal oxides, but their utility as catalysts is limited by coarsening at high temperatures. Rhodium oxide and rhodium metal nanoparticles on niobate and tantalate supports are anomalously stable. To understand this, the nanoparticle-support interaction was studied by isothermal titration calorimetry (ITC), environmental transmission electron microscopy (ETEM), and synchrotron X-ray absorption and scattering techniques. Nanosheets derived from the layered oxides KCa2Nb3O10, K4Nb6O17, and RbTaO3 were compared as supports to nanosheets of Na-TSM, a synthetic fluoromica (Na0.66Mg2.68(Si3.98Al0.02)O10.02F1.96), and α-Zr(HPO4)2·H2O. High surface area SiO2 and γ-Al2O3 supports were also used for comparison in the ITC experiments. A Born-Haber cycle analysis of ITC data revealed an exothermic interaction between Rh(OH)3 nanoparticles and the layered niobate and tantalate supports, with ΔH values in the range -32 kJ·mol(-1) Rh to -37 kJ·mol(-1) Rh. In contrast, the interaction enthalpy was positive with SiO2 and γ-Al2O3 supports. The strong interfacial bonding in the former case led to "reverse" ripening of micrometer-size Rh(OH)3, which dispersed as 0.5 to 2 nm particles on the niobate and tantalate supports. In contrast, particles grown on Na-TSM and α-Zr(HPO4)2·H2O nanosheets were larger and had a broad size distribution. ETEM, X-ray absorption spectroscopy, and pair distribution function analyses were used to study the growth of supported nanoparticles under oxidizing and reducing conditions, as well as the transformation from Rh(OH)3 to Rh nanoparticles. Interfacial covalent bonding, possibly strengthened by d-electron acid/base interactions, appear to stabilize Rh(OH)3, Rh2O3, and Rh nanoparticles on niobate and tantalate supports.

  5. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  6. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  7. Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

    International Nuclear Information System (INIS)

    Abadli, S.; Mansour, F.

    2011-01-01

    This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

  8. Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

    NARCIS (Netherlands)

    Macco, B.; Vos, M.; Thissen, N.F.W.; Bol, A.A.; Kessels, W.M.M.

    2015-01-01

    The preparation of high-quality molybdenum oxide (MoOx) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 °C. The films are amorphous, slightly substoichiometric with respect to MoO3, and free of other elements apart from hydrogen (&11 at%). The

  9. Silicon heterojunction solar cell passivation in combination with nanocrystalline silicon oxide emitters

    NARCIS (Netherlands)

    Gatz, H.A.; Rath, J.K.; Verheijen, M.A.; Kessels, W.M.M.; Schropp, R.E.I.

    2016-01-01

    Silicon heterojunction solar cells (SHJ) are well known for their high efficiencies, enabled by their remarkably high open-circuit voltages (VOC). A key factor in achieving these values is a good passivation of the crystalline wafer interface. One of the restrictions during SHJ solar cell production

  10. Redistribution of erbium during the crystallization of buried amorphous silicon layers

    International Nuclear Information System (INIS)

    Aleksandrov, O.V.; Nikolaev, Yu.A.; Sobolev, N.A.; Sakharov, V.I.; Serenkov, I.T.; Kudryavtsev, Yu.A.

    1999-01-01

    The redistribution of Er during its implantation in silicon at doses close to the amorphization threshold and its subsequent solid-phase epitaxial (SPE) crystallization is investigated. The formation of a buried amorphous (a) layer is discovered at Er doses equal to 5x10 13 and 1x10 14 cm -2 using Rutherford backscattering. The segregation of Er in this case takes place inwardly from the two directions corresponding to the upper and lower boundaries of the buried αlayer and leads to the formation of a concentration peak at the meeting place of the two crystallization fronts. A method for calculating the coordinate dependence of the segregation coefficient k from the distribution profiles of the erbium impurity before and after annealing is proposed. The k(x) curve exhibits a drop, whose width increases with decreasing Er implantation dose. Its appearance is attributed to the nonequilibrium nature of the segregation process at the beginning of SPE crystallization

  11. On determining dead layer and detector thicknesses for a position-sensitive silicon detector

    Science.gov (United States)

    Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

    2018-04-01

    In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

  12. The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

    DEFF Research Database (Denmark)

    Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas

    Donor-acceptor co-doped silicon carbide layers are promising light converters for novel monolithic all-semiconductor LEDs due to their broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides appropriate doping concentrations yielding low radiative...... lifetimes, high nonradiative lifetimes are crucial for efficient light conversion. Despite the excellent crystalline quality that can generally be obtained by sublimation epitaxy according to XRD measurements, the role of defects in f-SiC is not yet well understood. Recent results from room temperature...... photoluminescence, charge carrier lifetime measurements by microwave detected photoconductivity and internal quantum efficiency measurements suggest that the internal quantum efficiency of f-SiC layers is significantly affected by the incorporation of defects during epitaxy. Defect formation seems to be related...

  13. A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    International Nuclear Information System (INIS)

    Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

    2011-01-01

    In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

  14. Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO{sub 2}/Si nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Mani-Gonzalez, Pierre Giovanni [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro, Mexico and Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Ave. Del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vazquez-Lepe, Milton Oswaldo [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro, Mexico and Departamento de Ingeniería de Proyectos, Universidad de Guadalajara, Guadalajara 45100, Jalisco (Mexico); Herrera-Gomez, Alberto, E-mail: aherrera@qro.cinvestav.mx [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro (Mexico)

    2015-01-15

    Hafnium oxide nanofilms were grown with atomic layer deposition on H-terminated Si (001) wafers employing tetrakis dimethyl amino hafnium (TDMA-Hf) and water as precursors. While the number of cycles (30) and the aperture-time for TDMA-Hf (0.08 s) were kept constant, the aperture-time (τ{sub H{sub 2O}}) for the oxidant-agent (H{sub 2}O) was varied from 0 to 0.10 s. The structure of the films was characterized with robust analysis employing angle-resolved x-ray photoelectron spectroscopy. In addition to a ∼1 nm hafnium oxide layer, a hafnium silicate interface layer, also ∼1 nm thick, is formed for τ{sub H{sub 2O}} > 0. The incorporation degree of silicon into the interface layer (i.e., the value of 1 − x in Hf{sub x}Si{sub 1−x}O{sub y}) shows a minimum of 0.32 for τ{sub H{sub 2O}} = 0.04 s. By employing the simultaneous method during peak-fitting analysis, it was possible to clearly resolve the contribution from the silicate and from oxide to the O 1s spectra, allowing for the assessment of the oxygen composition of each layer as a function of oxidant aperture time. The uncertainties of the peak areas and on the thickness and composition of the layers were calculated employing a rigorous approach.

  15. Room temperature NO2-sensing properties of porous silicon/tungsten oxide nanorods composite

    International Nuclear Information System (INIS)

    Wei, Yulong; Hu, Ming; Wang, Dengfeng; Zhang, Weiyi; Qin, Yuxiang

    2015-01-01

    Highlights: • Porous silicon/WO 3 nanorods composite is synthesized via hydrothermal method. • The morphology of WO 3 nanorods depends on the amount of oxalic acid (pH value). • The sensor can detect ppb level NO 2 at room temperature. - Abstract: One-dimensional single crystalline WO 3 nanorods have been successfully synthesized onto the porous silicon substrates by a seed-induced hydrothermal method. The controlled morphology of porous silicon/tungsten oxide nanorods composite was obtained by using oxalic acid as an organic inducer. The reaction was carried out at 180 °C for 2 h. The influence of oxalic acid (pH value) on the morphology of porous silicon/tungsten oxide nanorods composite was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The NO 2 -sensing properties of the sensor based on porous silicon/tungsten oxide nanorods composite were investigated at different temperatures ranging from room temperature (∼25 °C) to 300 °C. At room temperature, the sensor behaved as a typical p-type semiconductor and exhibited high gas response, good repeatability and excellent selectivity characteristics toward NO 2 gas due to its high specific surface area, special structure, and large amounts of oxygen vacancies

  16. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    International Nuclear Information System (INIS)

    Wilking, S.; Ebert, S.; Herguth, A.; Hahn, G.

    2013-01-01

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects

  17. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

    2014-01-01

    Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

  18. Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

    Energy Technology Data Exchange (ETDEWEB)

    Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

    2009-10-15

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  19. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    Science.gov (United States)

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-06

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

  20. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    Science.gov (United States)

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-07

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    Science.gov (United States)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  2. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  3. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  4. Real-time monitoring of enzyme activity in a mesoporous silicon double layer

    Science.gov (United States)

    Orosco, Manuel M.; Pacholski, Claudia; Sailor, Michael J.

    2009-04-01

    The activity of certain proteolytic enzymes is often an indicator of disease states such as cancer, stroke and neurodegeneracy, so there is a need for rapid assays that can characterize the kinetics and substrate specificity of enzymatic reactions. Nanostructured membranes can efficiently separate biomolecules, but coupling a sensitive detection method to such a membrane remains difficult. Here, we demonstrate a single mesoporous nanoreactor that can isolate and quantify in real time the reaction products of proteases. The reactor consists of two layers of porous films electrochemically prepared from crystalline silicon. The upper layer, with large pore sizes (~100 nm in diameter), traps the protease and acts as the reactor. The lower layer, with smaller pore sizes (~6 nm), excludes the proteases and other large proteins and captures the reaction products. Infiltration of the digested fragments into the lower layer produces a measurable change in optical reflectivity, and this allows label-free quantification of enzyme kinetics in real time within a volume of ~5 nl.

  5. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    Science.gov (United States)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  6. Recent progress in the development and understanding of silicon surface passivation by aluminum oxide for photovoltaics

    NARCIS (Netherlands)

    Dingemans, G.; Kessels, W.M.M.

    2010-01-01

    In the recent years, considerable progress has been made in the understanding of the unique silicon surface passivation properties of aluminum oxide (Al2O3) films including its underlying mechanisms. Containing a high fixed negative charge density located close to the Si interface, Al2O3 provides a

  7. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.

    2017-01-01

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21

  8. Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

    NARCIS (Netherlands)

    Xu, J.Y.; Bronsveld, P.M.; Boom, G.; Hosson, J.Th.M. De

    1984-01-01

    Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect

  9. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Kutbee, Arwa T.; Ghodsi Nasseri, Seyed Faizelldin; Bersuker, G.; Hussain, Muhammad Mustafa

    2014-01-01

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect

  10. Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Nurul Izni Rusli

    2012-12-01

    Full Text Available The formation of high-density zinc oxide (ZnO nanorods on porous silicon (PS substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn powder in the presence of oxygen (O2 gas was systematically investigated. The high-density growth of ZnO nanorods with (0002 orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnOx seeds as nucleation sites for the subsequent growth of ZnO nanorods. The geometrical morphologies of ZnO nanorods are determined by the ZnOx seed structures, i.e., cluster or layer structures. The flower-like hexagonal-faceted ZnO nanorods grown at 600 °C seem to be generated from the sparsely distributed ZnOx nanoclusters. Vertically aligned hexagonal-faceted ZnO nanorods grown at 800 °C may be inferred from the formation of dense arrays of ZnOx clusters. The formation of disordered ZnO nanorods formed at 1000 °C may due to the formation of a ZnOx seed layer. The growth mechanism involved has been described by a combination of self-catalyzed vapor-liquid-solid (VLS and vapor-solid (VS mechanism. The results suggest that for a more precise study on the growth of ZnO nanostructures involving the introduction of seeds, the initial seed structures must be taken into account given their significant effects.

  11. Energetic basis of catalytic activity of layered nanophase calcium manganese oxides for water oxidation.

    Science.gov (United States)

    Birkner, Nancy; Nayeri, Sara; Pashaei, Babak; Najafpour, Mohammad Mahdi; Casey, William H; Navrotsky, Alexandra

    2013-05-28

    Previous measurements show that calcium manganese oxide nanoparticles are better water oxidation catalysts than binary manganese oxides (Mn3O4, Mn2O3, and MnO2). The probable reasons for such enhancement involve a combination of factors: The calcium manganese oxide materials have a layered structure with considerable thermodynamic stability and a high surface area, their low surface energy suggests relatively loose binding of H2O on the internal and external surfaces, and they possess mixed-valent manganese with internal oxidation enthalpy independent of the Mn(3+)/Mn(4+) ratio and much smaller in magnitude than the Mn2O3-MnO2 couple. These factors enhance catalytic ability by providing easy access for solutes and water to active sites and facile electron transfer between manganese in different oxidation states.

  12. Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

    NARCIS (Netherlands)

    Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

    2017-01-01

    In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

  13. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    International Nuclear Information System (INIS)

    Ke, Cangming; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf; Peters, Ian Marius

    2015-01-01

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t + -i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO x ) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO x parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t + -i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm 2 , according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

  14. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  15. Copper oxide/N-silicon heterojunction photovoltaic device

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-01-01

    A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

  16. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  17. Effect of charged deep states in hydrogenated amorphous silicon on the behavior of iron oxides nanoparticles deposited on its surface

    International Nuclear Information System (INIS)

    Gmucova, Katarina; Weis, Martin; Nadazdy, Vojtech; Capek, Ignac; Satka, Alexander; Chitu, Livia; Cirak, Julius; Majkova, Eva

    2008-01-01

    Langmuir-Blodgett technique has been used for the deposition of ordered two-dimensional arrays of iron oxides (Fe 3 O 4 /Fe 2 O 3 ) nanoparticles onto the photovoltaic hydrogenated amorphous silicon (a-Si:H) thin film. Electric field at the a-Si:H/iron oxides nanoparticles interface was directly in the electrochemical cell modified by light soaking and bias voltage (negative or positive) pretreatment resulting in the change of the dominant type of charged deep states in the a-Si:H layer. Induced reversible changes in the nanoparticle redox behavior have been observed. We suggest two possible explanations of the data obtained, both of them are needed to describe measured electrochemical signals. The first one consists in the electrocatalytical effect caused by the defect states (negatively or positively charged) in the a-Si:H layer. The second one consists in the possibility to manipulate the nanoparticle cores in the prepared structure immersed in aqueous solution via the laser irradiation under specific bias voltage. In this case, the nanoparticle cores are assumed to be covered with surface clusters of heterovalent complexes created onto the surface regions with prevailing ferrous or ferric valency. Immersed in the high viscosity surrounding composed of the wet organic nanoparticle envelope these cores are able to perform a field-assisted pivotal motion. The local electric field induced by the deep states in the a-Si:H layer stabilizes their 'orientation ordering' in an energetically favourable position

  18. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  19. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  20. Oxide layer stability in lead-bismuth at high temperature

    Science.gov (United States)

    Martín, F. J.; Soler, L.; Hernández, F.; Gómez-Briceño, D.

    2004-11-01

    Materials protection by 'in situ' oxidation has been studied in stagnant lead-bismuth, with different oxygen levels (H 2/H 2O ratios of 0.3 and 0.03), at temperatures from 535 °C to 600 °C and times from 100 to 3000 h. The materials tested were the martensitic steels F82Hmod, EM10 and T91 and the austenitic stainless steels, AISI 316L and AISI 304L. The results obtained point to the existence of an apparent threshold temperature above which corrosion occurs and the formation of a protective and stable oxide layer is not possible. This threshold temperature depends on material composition, oxygen concentration in the liquid lead-bismuth and time. The threshold temperature is higher for the austenitic steels, especially for the AISI 304L, and it increases with the oxygen concentration in the lead-bismuth. The oxide layer formed disappear with time and, after 3000 h all the materials, except AISI 304L, suffer corrosion, more severe for the martensitic steels and at the highest temperature tested.

  1. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  2. Coating of tips for electrochemical scanning tunneling microscopy by means of silicon, magnesium, and tungsten oxides

    Science.gov (United States)

    Salerno, Marco

    2010-09-01

    Different combinations of metal tips and oxide coatings have been tested for possible operation in electrochemical scanning tunneling microscopy. Silicon and magnesium oxides have been thermally evaporated onto gold and platinum-iridium tips, respectively. Two different thickness values have been explored for both materials, namely, 40 and 120 nm for silicon oxide and 20 and 60 nm for magnesium oxide. Alternatively, tungsten oxide has been grown on tungsten tips via electrochemical anodization. In the latter case, to seek optimal results we have varied the pH of the anodizing electrolyte between one and four. The oxide coated tips have been first inspected by means of scanning electron microscopy equipped with microanalysis to determine the morphological results of the coating. Second, the coated tips have been electrically characterized ex situ for stability in time by means of cyclic voltammetry in 1 M aqueous KCl supporting electrolyte, both bare and supplemented with K3[Fe(CN)6] complex at 10 mM concentration in milliQ water as an analyte. Only the tungsten oxide coated tungsten tips have shown stable electrical behavior in the electrolyte. For these tips, the uncoated metal area has been estimated from the electrical current levels, and they have been successfully tested by imaging a gold grating in situ, which provided stable results for several hours. The successful tungsten oxide coating obtained at pH=4 has been assigned to the WO3 form.

  3. Formation of silicon Oxide nano thickness on Si (III) with the assistance of Cs

    International Nuclear Information System (INIS)

    Bahari, A.; Bagheri, M.

    2006-01-01

    : The possibility of controlling the growth of a uniform ultra thin oxide on silicon via oxygen dosing at low temperatures, would be a great interest for the projected further development of nano electronics. One way to achieve this is to be able to control the conversion of chemically adsorbed oxygen and retained at room temperature into oxide during subsequent heating. Oxygen is chemisorbed at room temperature on Si(111) surface to saturation ( >100 L O 2 ), and the experimental chamber is then evacuated. This leaves adsorbed oxygen as atomically inserted on Si surface which sits on the back bonds. This surface is then used as a base for further processing which in one case consists of annealing to 600- 700 d eg C and subsequent exposures equivalent to the first step. This is repeated again. As the focus of this work, a series of experiments are done with adsorbed Cs, which assists in retaining oxygen and in transforming the adsorbed oxygen into oxide upon heating. It was found that the oxide formed on the surface at low coverage clusters. Without any external influence, the clusters may be made to coalesce upon further oxygen adsorption at room temperature, and annealing terminates as a continuous monolayer of amorphous oxide on top of a well-ordered silicon substrate. This configuration is inert to further uptake of oxygen. A higher oxide thickness could be obtained with Cs. Also in this case, the oxide growth saturates in an inert oxide Iayer

  4. The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

    International Nuclear Information System (INIS)

    Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

    1997-01-01

    The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

  5. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  6. Effect of laser pulsed radiation on the properties of implanted layers of silicon carbide

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Voron'ko, O.N.; Nojbert, F.; Potapov, E.N.

    1984-01-01

    Results are presented of investigation into pulsed laser radiation effects on the layers of GH polytype silicon carbide converted to amorphous state by implantation of boron and aluminium ions. The implantation doses were selected to be 5x10 16 for boron and 5x10 15 cm -2 for aluminium, with the ion energies being 60 and 80 keV, respectively. The samples annealed under nanosecond regime are stated to posseys neither photoluminescence (PL) nor cathodoluminescence (CL). At the same time the layers annealed in millisecond regime have a weak PL at 100 K and CL at 300 K. The PL and CL are observed in samples, laser-annealed at radiation energy density above 150-160 J/cm 2 in case of boron ion implantation and 100-120 J/cm 2 in case of aluminium ion implantation. Increasing the radiation energy density under the nanosecond regime of laser annealing results in the surface evaporation due to superheating of amorphous layers. Increasing the energy density above 220-240 J/cm 2 results in destruction of the samples

  7. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    Science.gov (United States)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  8. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  9. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  10. The influence of silicon as a possible reactive element in the protection against high temperature oxidation of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Otero, E.; Perez, F.J.; Hierro, M.P.; Gomez, C.; Pedraza, F.; Segovia, J. L. de; Roman, E.

    1998-01-01

    The influence of silicon incorporated into the alloy by means of ion implantation of 1 x 10''15 ions/cm''2 at 150 keV on the protective scale development based upon Cr 1 ,3 Fe 0 ,7O 3 and manganese-enriched spinels, Mn 1 ,5Cr 1 .5O 4 after oxidation of an austenitic AISI 304 stainless steel at 1.173 K and atmospheric pressure of air for 144 h has been studied. The presence of small quantities of silicon at the outermost layers of the alloy promotes transport of chromium during the early stages of oxidation. Further, ion implantation seems to play a beneficial role against decarburization of the alloy. (Author) 8 refs

  11. Anchoring of alkyl chain molecules on oxide surface using silicon alkoxide

    Energy Technology Data Exchange (ETDEWEB)

    Narita, Ayumi, E-mail: narita.ayumi@jaea.go.jp [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Graduate School of Science and Engineering, Ibaraki University, Bunnkyo, Mito-shi, Ibaraki-ken 310-8512 (Japan); Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Hirao, Norie [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Yaita, Tsuyoshi [Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki-ken 319-1195 (Japan); Graduate School of Science and Engineering, Ibaraki University, Bunnkyo, Mito-shi, Ibaraki-ken 310-8512 (Japan)

    2012-01-01

    Chemical states of the interfaces between octadecyl-triethoxy-silane (ODTS) molecules and sapphire surface were measured by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS) using synchrotron soft X-rays. The nearly self-assembled monolayer of ODTS was formed on the sapphire surface. For XPS and NEXAFS measurements, it was elucidated that the chemical bond between silicon alkoxide in ODTS and the surface was formed, and the alkane chain of ODTS locates upper side on the surface. As a result, it was elucidated that the silicon alkoxide is a good anchor for the immobilization of organic molecules on oxides.

  12. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  13. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    OpenAIRE

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  14. Improved the Surface Roughness of Silicon Nanophotonic Devices by Thermal Oxidation Method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Zujun; Shao Shiqian; Wang Yi, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, No. 1037, Luoyu Street, Wuhan 430074 (China)

    2011-02-01

    The transmission loss of the silicon-on-insulator (SOI) waveguide and the coupling loss of the SOI grating are determined to a large extent by the surface roughness. In order to obtain smaller loss, thermal oxidation is a good choice to reduce the surface roughness of the SOI waveguide and grating. Before the thermal oxidation, the root mean square of the surface roughness is over 11 nm. After the thermal oxidation, the SEM figure shows that the bottom of the grating is as smooth as quartz surface, while the AFM shows that the root mean square of the surface is less than 5 nm.

  15. Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Fidan, S.; Muhaffel, F. [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Sariyer, 34469 Istanbul (Turkey); Riool, M. [Department of Medical Microbiology, Center for Infection and Immunity Amsterdam (CINIMA), Academic Medical Center, University of Amsterdam, Meibergdreef 15, 1105, AZ, Amsterdam (Netherlands); Cempura, G. [International Centre of Electron Microscopy for Materials Science, AGH University of Science and Technology, PL, 30-059 Kraków (Poland); Boer, L. de; Zaat, S.A.J. [Department of Medical Microbiology, Center for Infection and Immunity Amsterdam (CINIMA), Academic Medical Center, University of Amsterdam, Meibergdreef 15, 1105, AZ, Amsterdam (Netherlands); Filemonowicz, A. Czyrska - [International Centre of Electron Microscopy for Materials Science, AGH University of Science and Technology, PL, 30-059 Kraków (Poland); Cimenoglu, H., E-mail: cimenogluh@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Sariyer, 34469 Istanbul (Turkey)

    2017-02-01

    The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC{sub 2}H{sub 3}O{sub 2}). In general, synthesized MAO layers were composed of zirconium oxide (ZrO{sub 2}) and zircon (ZrSiO{sub 4}). Addition of AgC{sub 2}H{sub 3}O{sub 2} into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. - Highlights: • Micro-arc oxidation process was applied on zirconium in an electrolyte containing silver acetate. • Silver incorporated in the oxide layer in the form of nanoparticles. • 0.45 wt.% silver incorporation provided excellent antibacterial activity.

  16. Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics

    International Nuclear Information System (INIS)

    Fidan, S.; Muhaffel, F.; Riool, M.; Cempura, G.; Boer, L. de; Zaat, S.A.J.; Filemonowicz, A. Czyrska -; Cimenoglu, H.

    2017-01-01

    The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC 2 H 3 O 2 ). In general, synthesized MAO layers were composed of zirconium oxide (ZrO 2 ) and zircon (ZrSiO 4 ). Addition of AgC 2 H 3 O 2 into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. - Highlights: • Micro-arc oxidation process was applied on zirconium in an electrolyte containing silver acetate. • Silver incorporated in the oxide layer in the form of nanoparticles. • 0.45 wt.% silver incorporation provided excellent antibacterial activity.

  17. Rate equation modelling of erbium luminescence dynamics in erbium-doped silicon-rich-silicon-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Miraj, E-mail: m.shah@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Wojdak, Maciej; Kenyon, Anthony J. [Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE (United Kingdom); Halsall, Matthew P.; Li, Hang; Crowe, Iain F. [Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Sackville St Building, Manchester M13 9PL (United Kingdom)

    2012-12-15

    Erbium doped silicon-rich silica offers broad band and very efficient excitation of erbium photoluminescence (PL) due to a sensitization effect attributed to silicon nanocrystals (Si-nc), which grow during thermal treatment. PL decay lifetime measurements of sensitised Er{sup 3+} ions are usually reported to be stretched or multi exponential, very different to those that are directly excited, which usually show a single exponential decay component. In this paper, we report on SiO{sub 2} thin films doped with Si-nc's and erbium. Time resolved PL measurements reveal two distinct 1.54 {mu}m Er decay components; a fast microsecond component, and a relatively long lifetime component (10 ms). We also study the structural properties of these samples through TEM measurements, and reveal the formation of Er clusters. We propose that these Er clusters are responsible for the fast {mu}s decay component, and we develop rate equation models that reproduce the experimental transient observations, and can explain some of the reported transient behaviour in previously published literature.

  18. Multiphase layered oxide growth on pure metals. I. General formulation

    International Nuclear Information System (INIS)

    Fromhold, A.T. Jr.

    1982-01-01

    A general formulation for the simultaneous growth of any number of layered planar oxide phases on a pure metal under diffusion-controlled conditions has been developed. Four individual situations have been developed in detail, namely, situations in which the predominant mode of ion transport is by cation interstitials, cation vacancies, anion interstitials, or anion vacancies. The generalized formulation enables the determination of quasi-steady-state growth kinetics following step function changes in the experimental conditions such as ambient oxygen pressure or temperature. Numerical evaluation of the coupled growth equations for the individual phases is required to deduce the general predictions of the theory. In the limit of two-layer growth by cation interstitial diffusion, the present formulation reproduces the earlier results of Fromhold and Sato

  19. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  20. Visible light emission from silicon implanted and annealed SiO2layers

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

    1997-01-01

    Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed