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Sample records for silicon grating structure

  1. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  2. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  3. Enhanced Raman scattering in porous silicon grating.

    Science.gov (United States)

    Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

    2018-03-19

    The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

  4. Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

    Science.gov (United States)

    Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

    2017-12-13

    We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

  5. Coherent scatter-controlled phase-change grating structures in silicon using femtosecond laser pulses.

    Science.gov (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2017-07-04

    Periodic structures of alternating amorphous-crystalline fringes have been fabricated in silicon using repetitive femtosecond laser exposure (800 nm wavelength and 120 fs duration). The method is based on the interference of the incident laser light with far- and near-field scattered light, leading to local melting at the interference maxima, as demonstrated by femtosecond microscopy. Exploiting this strategy, lines of highly regular amorphous fringes can be written. The fringes have been characterized in detail using optical microscopy combined modelling, which enables a determination of the three-dimensional shape of individual fringes. 2D micro-Raman spectroscopy reveals that the space between amorphous fringes remains crystalline. We demonstrate that the fringe period can be tuned over a range of 410 nm - 13 µm by changing the angle of incidence and inverting the beam scan direction. Fine control over the lateral dimensions, thickness, surface depression and optical contrast of the fringes is obtained via adjustment of pulse number, fluence and spot size. Large-area, highly homogeneous gratings composed of amorphous fringes with micrometer width and millimeter length can readily be fabricated. The here presented fabrication technique is expected to have applications in the fields of optics, nanoelectronics, and mechatronics and should be applicable to other materials.

  6. VCSELs and silicon light sources exploiting SOI grating mirrors

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2012-01-01

    In this talk, novel vertical-cavity laser structure consisting of a dielectric Bragg reflector, a III-V active region, and a high-index-contrast grating made in the Si layer of a silicon-on-insulator (SOI) wafer will be presented. In the Si light source version of this laser structure, the SOI...... the Bragg reflector. Numerical simulations show that both the silicon light source and the VCSEL exploiting SOI grating mirrors have superior performances, compared to existing silicon light sources and long wavelength VCSELs. These devices are highly adequate for chip-level optical interconnects as well...

  7. Sub-wavelength grating mode transformers in silicon slab waveguides.

    Science.gov (United States)

    Bock, Przemek J; Cheben, Pavel; Schmid, Jens H; Delâge, André; Xu, Dan-Xia; Janz, Siegfried; Hall, Trevor J

    2009-10-12

    We report on several new types of sub-wavelength grating (SWG) gradient index structures for efficient mode coupling in high index contrast slab waveguides. Using a SWG, an adiabatic transition is achieved at the interface between silicon-on-insulator waveguides of different geometries. The SWG transition region minimizes both fundamental mode mismatch loss and coupling to higher order modes. By creating the gradient effective index region in the direction of propagation, we demonstrate that efficient vertical mode transformation can be achieved between slab waveguides of different core thickness. The structures which we propose can be fabricated by a single etch step. Using 3D finite-difference time-domain simulations we study the loss, polarization dependence and the higher order mode excitation for two types (triangular and triangular-transverse) of SWG transition regions between silicon-on-insulator slab waveguides of different core thicknesses. We demonstrate two solutions to reduce the polarization dependent loss of these structures. Finally, we propose an implementation of SWG structures to reduce loss and higher order mode excitation between a slab waveguide and a phase array of an array waveguide grating (AWG). Compared to a conventional AWG, the loss is reduced from -1.4 dB to < -0.2 dB at the slab-array interface.

  8. Embedded high-contrast distributed grating structures

    Science.gov (United States)

    Zubrzycki, Walter J.; Vawter, Gregory A.; Allerman, Andrew A.

    2002-01-01

    A new class of fabrication methods for embedded distributed grating structures is claimed, together with optical devices which include such structures. These new methods are the only known approach to making defect-free high-dielectric contrast grating structures, which are smaller and more efficient than are conventional grating structures.

  9. Angle-resolved diffraction grating biosensor based on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

    2016-03-07

    In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

  10. Thermal and Structural Analysis of FIMS Grating

    Directory of Open Access Journals (Sweden)

    K.-I. Seon

    2001-06-01

    Full Text Available Far ultraviolet IMaging Spectrograph (FIMS should be designed to maintain its structural stability and to minimize optical performance degradation in launch and in operation enviroments. The structural and thermal analyzes of grating and grating mount system, which are directly related to FIMS optical performance, was performed using finite element method. The grating mount was made to keep the grating stress down, while keeping the natural frequency of the grating mount higher than 100 Hz. Transient and static thermal analyzes were also performed and the results shows that the thermal stress on the grating can be attenuated sufficiently The optical performance variation due to temperature variation was within the allowed range.

  11. Ultra-compact silicon nitride grating coupler for microscopy systems

    OpenAIRE

    Zhu, Yunpeng; Wang, Jie; Xie, Weiqiang; Tian, Bin; Li, Yanlu; Brainis, Edouard; Jiao, Yuqing; Van Thourhout, Dries

    2017-01-01

    Grating couplers have been widely used for coupling light between photonic chips and optical fibers. For various quantum-optics and bio-optics experiments, on the other hand, there is a need to achieve good light coupling between photonic chips and microscopy systems. Here, we propose an ultra-compact silicon nitride (SiN) grating coupler optimized for coupling light from a waveguide to a microscopy system. The grating coupler is about 4 by 2 mu m(2) in size and a 116 nm 1 dB bandwidth can be...

  12. The grating as an accelerating structure

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1991-02-01

    This report considers the use of a diffraction grating as an accelerating structure for charged particle beams. We examine the functional dependence of the electromagnetic fields above the surface of a grating. Calculations are made of the strength of the accelerating modes for structures with π and 2π phase advance per period and for incident waves polarized with either the E or H vector along the grooves of the grating. We consider examples of using gratings in a laser linac and in a grating lens. We also briefly examine previous results published about this subject. 36 refs

  13. All-silicon nanorod-based Dammann gratings.

    Science.gov (United States)

    Li, Zile; Zheng, Guoxing; He, Ping'An; Li, Song; Deng, Qiling; Zhao, Jiangnan; Ai, Yong

    2015-09-15

    Established diffractive optical elements (DOEs), such as Dammann gratings, whose phase profile is controlled by etching different depths into a transparent dielectric substrate, suffer from a contradiction between the complexity of fabrication procedures and the performance of such gratings. In this Letter, we combine the concept of geometric phase and phase modulation in depth, and prove by theoretical analysis and numerical simulation that nanorod arrays etched on a silicon substrate have a characteristic of strong polarization conversion between two circularly polarized states and can act as a highly efficient half-wave plate. More importantly, only by changing the orientation angles of each nanorod can the arrays control the phase of a circularly polarized light, cell by cell. With the above principle, we report the realization of nanorod-based Dammann gratings reaching diffraction efficiencies of 50%-52% in the C-band fiber telecommunications window (1530-1565 nm). In this design, uniform 4×4 spot arrays with an extending angle of 59°×59° can be obtained in the far field. Because of these advantages of the single-step fabrication procedure, accurate phase controlling, and strong polarization conversion, nanorod-based Dammann gratings could be utilized for various practical applications in a range of fields.

  14. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

  15. Feasibility evaluation of a neutron grating interferometer with an analyzer grating based on a structured scintillator

    Science.gov (United States)

    Kim, Youngju; Kim, Jongyul; Kim, Daeseung; Hussey, Daniel. S.; Lee, Seung Wook

    2018-03-01

    We introduce an analyzer grating based on a structured scintillator fabricated by a gadolinium oxysulfide powder filling method for a symmetric Talbot-Lau neutron grating interferometer. This is an alternative way to analyze the Talbot self-image of a grating interferometer without using an absorption grating to block neutrons. Since the structured scintillator analyzer grating itself generates the signal for neutron detection, we do not need an additional scintillator screen as an absorption analyzer grating. We have developed and tested an analyzer grating based on a structured scintillator in our symmetric Talbot-Lau neutron grating interferometer to produce high fidelity absorption, differential phase, and dark-field contrast images. The acquired images have been compared to results of a grating interferometer utilizing a typical absorption analyzer grating with two commercial scintillation screens. The analyzer grating based on the structured scintillator enhances interference fringe visibility and shows a great potential for economical fabrication, compact system design, and so on. We report the performance of the analyzer grating based on a structured scintillator and evaluate its feasibility for the neutron grating interferometer.

  16. A size selective porous silicon grating-coupled Bloch surface and sub-surface wave biosensor.

    Science.gov (United States)

    Rodriguez, Gilberto A; Ryckman, Judson D; Jiao, Yang; Weiss, Sharon M

    2014-03-15

    A porous silicon (PSi) grating-coupled Bloch surface and sub-surface wave (BSW/BSSW) biosensor is demonstrated to size selectively detect the presence of both large and small molecules. The BSW is used to sense large immobilized analytes at the surface of the structure while the BSSW that is confined inside but near the top of the structure is used to sensitively detect small molecules. Functionality of the BSW and BSSW modes is theoretically described by dispersion relations, field confinements, and simulated refractive index shifts within the structure. The theoretical results are experimentally verified by detecting two different small chemical molecules and one large 40 base DNA oligonucleotide. The PSi-BSW/BSSW structure is benchmarked against current porous silicon technology and is shown to have a 6-fold higher sensitivity in detecting large molecules and a 33% improvement in detecting small molecules. This is the first report of a grating-coupled BSW biosensor and the first report of a BSSW propagating mode. © 2013 Published by Elsevier B.V.

  17. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin; Hong, Wei; Li, Xiaohang; Yang, Chunyong; Chen, Shaoping

    2017-01-01

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  18. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells

    KAUST Repository

    Hou, Jin

    2017-09-12

    By emulating the phyllotaxis structure of natural plants, which has an efficient and stable light capture capability, a two-dimensional spiral grating is introduced on the surface of crystalline silicon solar cells to obtain both efficient and stable light absorption. Using the rigorous coupled wave analysis method, the absorption performance on structural parameter variations of spiral gratings is investigated firstly. Owing to diffraction resonance and excellent superficies antireflection, the integrated absorption of the optimal spiral grating cell is raised by about 77 percent compared with the conventional slab cell. Moreover, though a 15 percent deviation of structural parameters from the optimal spiral grating is applied, only a 5 percent decrease of the absorption is observed. This reveals that the performance of the proposed grating would tolerate large structural variations. Furthermore, the angular and polarization dependence on the absorption of the optimized cell is studied. For average polarizations, a small decrease of only 11 percent from the maximum absorption is observed within an incident angle ranging from −70 to 70 degrees. The results show promising application potentials of the biomimetic spiral grating in the solar cell.

  19. Performance testing of an off-plane reflection grating and silicon pore optic spectrograph at PANTER

    Science.gov (United States)

    Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey T.; Donovan, Benjamin D.; Miles, Drew M.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Cheimets, Peter; Hertz, Edward; Bookbinder, Jay A.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

    2015-10-01

    An x-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for Extraterrestrial Physics PANTER x-ray test facility. SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with an SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

  20. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Directory of Open Access Journals (Sweden)

    Iraj S. Amiri

    2018-06-01

    Full Text Available A three-dimensional (3-D finite-difference-time-domain (FDTD analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm, the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm atomic layers of the graphene grate. Keywords: Optical waveguide, Silicon waveguide, Grate, Graphene, Optical transmissivity

  1. Fundamental limit of light trapping in grating structures

    KAUST Repository

    Yu, Zongfu

    2010-08-11

    We use a rigorous electromagnetic approach to analyze the fundamental limit of light-trapping enhancement in grating structures. This limit can exceed the bulk limit of 4n 2, but has significant angular dependency. We explicitly show that 2D gratings provide more enhancement than 1D gratings. We also show the effects of the grating profile’s symmetry on the absorption enhancement limit. Numerical simulations are applied to support the theory. Our findings provide general guidance for the design of grating structures for light-trapping solar cells.

  2. Modeling optical transmissivity of graphene grate in on-chip silicon photonic device

    Science.gov (United States)

    Amiri, Iraj S.; Ariannejad, M. M.; Jalil, M. A.; Ali, J.; Yupapin, P.

    2018-06-01

    A three-dimensional (3-D) finite-difference-time-domain (FDTD) analysis was used to simulate a silicon photonic waveguide. We have calculated power and transmission of the graphene used as single or multilayers to study the light transmission behavior. A new technique has been developed to define the straight silicon waveguide integrated with grate graphene layer. The waveguide has a variable grate spacing to be filled by the graphene layer. The number of graphene atomic layers varies between 100 and 1000 (or 380 nm and 3800 nm), the transmitted power obtained varies as ∼30% and ∼80%. The ∼99%, blocking of the light was occurred in 10,000 (or 38,000 nm) atomic layers of the graphene grate.

  3. Theoretical Investigation of Subwavelength Gratings and Vertical Cavity Lasers Employing Grating Structures

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza

    This thesis deals with theoretical investigations of a newly proposed grating structure, referred to as hybrid grating (HG) as well as vertical cavity lasers based on the grating reflectors. The HG consists of a near-subwavelength grating layer and an unpatterned high-refractive-index cap layer...... directions, which is analogous to electronic quantum wells in conduction or valence bands. Several interesting configurations of heterostructures have been investigated and their potential in fundamental physics study and applications are discussed. For numerical and theoretical studies, a three...... feasibility than the HCG-based ones. Furthermore, the concept of cavity dispersion in vertical cavities is introduced and its importance in the modal properties is numerically investigated. The dispersion curvature of a cavity mode is interpreted as the effective photon mass of the cavity mode. In a vertical...

  4. Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

    Science.gov (United States)

    Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

    2017-03-20

    Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

  5. Traceable Mueller polarimetry and scatterometry for shape reconstruction of grating structures

    Science.gov (United States)

    Hansen, Poul-Erik; Madsen, Morten H.; Lehtolahti, Joonas; Nielsen, Lars

    2017-11-01

    Dimensional measurements of multi-patterned transmission gratings with a mixture of long and small periods are great challenges for optical metrology today. It is a further challenge when the aspect ratio of the structures is high, that is, when the height of structures is larger than the pitch. Here we consider a double patterned transmission grating with pitches of 500 nm and 20 000 nm. For measuring the geometrical properties of double patterned transmission grating we use a combined spectroscopic Mueller polarimetry and scatterometry setup. For modelling the experimentally obtained data we rigorously compute the scattering signal by solving Maxwell's equations using the RCWA method on a supercell structure. We also present a new method for analyzing the Mueller polarimetry parameters that performs the analysis in the measured variables. This new inversion method for finding the best fit between measured and calculated values are tested on silicon gratings with periods from 300 to 600 nm. The method is shown to give results within the expanded uncertainty of reference AFM measurements. The application of the new inversion method and the supercell structure to the double patterned transmission grating gives best estimates of dimensional quantities that are in fair agreement with those derived from local AFM measurements

  6. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Science.gov (United States)

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  7. Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

    Science.gov (United States)

    Chen, L. Y.; Loferski, J. J.

    1975-01-01

    Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

  8. Performance testing of a novel off-plane reflection grating and silicon pore optic spectrograph at PANTER

    Science.gov (United States)

    Marlowe, Hannah; McEntaffer, Randall L.; Allured, Ryan; DeRoo, Casey; Miles, Drew M.; Donovan, Benjamin D.; Tutt, James H.; Burwitz, Vadim; Menz, Benedikt; Hartner, Gisela D.; Smith, Randall K.; Günther, Ramses; Yanson, Alex; Vacanti, Giuseppe; Ackermann, Marcelo

    2015-05-01

    An X-ray spectrograph consisting of aligned, radially ruled off-plane reflection gratings and silicon pore optics (SPO) was tested at the Max Planck Institute for extraterrestrial Physics PANTER X-ray test facility. The SPO is a test module for the proposed Arcus mission, which will also feature aligned off-plane reflection gratings. This test is the first time two off-plane gratings were actively aligned to each other and with a SPO to produce an overlapped spectrum. We report the performance of the complete spectrograph utilizing the aligned gratings module and plans for future development.

  9. Flexible PCPDTBT:PCBM solar cells with integrated grating structures

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Liu, Yinghui; Madsen, Morten

    2013-01-01

    We report on development of flexible PCPDTBT:PCBM solar cells with integrated diffraction gratings on the bottom electrodes. The presented results address PCPDTBT:PCBM solar cells in an inverted geometry, which contains implemented grating structures whose pitch is tuned to match the absorption...... spectra of the active layer. This optimized solar cell structure leads to an enhanced absorption in the active layer and thus improved short-circuit currents and power conversion efficiencies in the fabricated devices. Fabrication of the solar cells on thin polyimide substrates which are compatible...

  10. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    International Nuclear Information System (INIS)

    Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

    2016-01-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

  11. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  12. Bragg gratings in air-silica structured fibers

    NARCIS (Netherlands)

    Groothoff, N.; Canning, J.; Buckley, E.; Lyttikainen, K.; Zagari, J.

    2003-01-01

    We report on grating writing in air-silica structured optical fibers with pure silica cores by use of two-photon absorption at 193 nm. A decrease in propagation loss with irradiation was observed. The characteristic growth curves were obtained. © 2003 Optical Society of America.

  13. Flexible organic solar cells including efficiency enhancing grating structures

    International Nuclear Information System (INIS)

    De Oliveira Hansen, Roana Melina; Liu Yinghui; Madsen, Morten; Rubahn, Horst-Günter

    2013-01-01

    In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques, such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption enhancement. Since the solar cells avoid using brittle electrodes, the performance of the flexible devices is not affected by the peeling process. We have investigated three different nanostructured grating designs and conclude that gratings with a 500 nm pitch distance have the highest light-trapping efficiency for the selected active layer material (P3HT:PCBM), resulting in an enhancement of about 34% on the solar cell efficiency. The presented method can be applied to a large variety of flexible nanostructured devices in future applications. (paper)

  14. Design Parameter Optimization of a Silicon-Based Grating Waveguide for Performance Improvement in Biochemical Sensor Application.

    Science.gov (United States)

    Hong, Yoo-Seung; Cho, Chun-Hyung; Sung, Hyuk-Kee

    2018-03-05

    We performed numerical analysis and design parameter optimization of a silicon-based grating waveguide refractive index (RI) sensor. The performance of the grating waveguide RI sensor was determined by the full-width at half-maximum (FWHM) and the shift in the resonance wavelength in the transmission spectrum. The transmission extinction, a major figure-of-merit of an RI sensor that reflects both FWHM and resonance shift performance, could be significantly improved by the proper determination of three major grating waveguide parameters: duty ratio, grating period, and etching depth. We analyzed the transmission characteristics of the grating waveguide under various design parameter conditions using a finite-difference time domain method. We achieved a transmission extinction improvement of >26 dB under a given bioenvironmental target change by the proper choice of the design procedure and parameters. This design procedure and choice of appropriate parameters would enable the widespread application of silicon-based grating waveguide in high-performance RI biochemical sensor.

  15. prismane structure by silicon substitution

    Indian Academy of Sciences (India)

    Using the second-order Møller–Plesset perturbation (MP2) theoretic method and the cc-pVDZ basis set, it is shown that with an increase in the number of carbon atoms substituted by silicon, the [6]-prismane structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is ...

  16. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  17. High-contrast gratings for long-wavelength laser integration on silicon

    Science.gov (United States)

    Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

    2014-02-01

    Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

  18. Wide wavelength range tunable one-dimensional silicon nitride nano-grating guided mode resonance filter based on azimuthal rotation

    Directory of Open Access Journals (Sweden)

    Ryoji Yukino

    2017-01-01

    Full Text Available We describe wavelength tuning in a one dimensional (1D silicon nitride nano-grating guided mode resonance (GMR structure under conical mounting configuration of the device. When the GMR structure is rotated about the axis perpendicular to the surface of the device (azimuthal rotation for light incident at oblique angles, the conditions for resonance are different than for conventional GMR structures under classical mounting. These resonance conditions enable tuning of the GMR peak position over a wide range of wavelengths. We experimental demonstrate tuning over a range of 375 nm between 500 nm˜875 nm. We present a theoretical model to explain the resonance conditions observed in our experiments and predict the peak positions with show excellent agreement with experiments. Our method for tuning wavelengths is simpler and more efficient than conventional procedures that employ variations in the design parameters of structures or conical mounting of two-dimensional (2D GMR structures and enables a single 1D GMR device to function as a high efficiency wavelength filter over a wide range of wavelengths. We expect tunable filters based on this technique to be applicable in a wide range of fields including astronomy and biomedical imaging.

  19. Silicon Carbide Printed Structures

    Data.gov (United States)

    National Aeronautics and Space Administration — The plan is to design a process that will allow precision fabrication of SiC structures using a sterolithographty printer and an oven process to sinter the material...

  20. Reflection color filters of the three primary colors with wide viewing angles using common-thickness silicon subwavelength gratings.

    Science.gov (United States)

    Kanamori, Yoshiaki; Ozaki, Toshikazu; Hane, Kazuhiro

    2014-10-20

    We fabricated reflection color filters of the three primary colors with wide viewing angles using silicon two-dimensional subwavelength gratings on the same quartz substrate. The grating periods were 400, 340, and 300 nm for red, green, and blue filters, respectively. All of the color filters had the same grating thickness of 100 nm, which enabled simple fabrication of a color filter array. Reflected colors from the red, green, and blue filters under s-polarized white-light irradiation appeared in the respective colors at incident angles from 0 to 50°. By rigorous coupled-wave analysis, the dimensions of each color filter were designed, and the calculated reflectivity was compared with the measured reflectivity.

  1. Silicon Betavoltaic Batteries Structures

    OpenAIRE

    V.N. Murashev; S.A. Legotin; O.I. Rabinovich; O.R. Abdulaev; U.V. Osipov

    2015-01-01

    For low-power miniature energy creation sources the particular interest is nickel Ni63. This paper discusses the main types of betavoltaic battery structures with the prospects for industrial application using - isotope of nickel Ni63. It is shown that the prospects for improving the effective efficiency are planar multijunction betavoltaic batteries.

  2. Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures

    International Nuclear Information System (INIS)

    Ko, Yeong Hwan; Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    We report on the periodic well-defined flower-like zinc oxide (ZnO) nanostructures (NSs) self-assembled through a simple hydrothermal method using silicon (Si) subwavelength grating (SWG) structures. The Si SWGs serve as building blocks for constructing a two-dimensional (2D) periodic architecture to integrate the one-dimensional (1D) ZnO NSs. Various controlled morphologies of ZnO NSs with high crystallinity are obtained by changing the growth conditions. For 1D ZnO NSs integrated on periodic hexagonal Si SWG structures, the reflection characteristics are investigated in comparison with the conventional ZnO nanorod (NR) arrays. For a three-dimensional (3D) flower-like ZnO NS on Si SWGs, a relatively low total reflectance of < 8% at wavelengths of 300-1050 nm is achieved compared to the ZnO NRs on Si substrate.

  3. Structural Health Monitoring of Bridges with Fiber Bragg Grating Sensors

    Directory of Open Access Journals (Sweden)

    Francisco Navarro-Henríquez

    2014-11-01

    Systems with fiber optic sensors FBG (Fiber Bragg Grating are consolidated in the Structural Health Monitoring (SMH of bridges, Nondestructive Testing (NDT static and dynamic measurements of deformation, displacement, deflection, temperature and vibration. This article provides a brief introduction to the technology and the fundamentals of fiber optic sensors, also present comparative advantages over its traditional counterpart is presented. Their characteristics are described and measurement graphics are presented as an application example of the FBG sensors. Finally, some key aspects to consider for proper use in the field are mentioned.

  4. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  5. Damage Evaluation and Analysis of Composite Pressure Vessels Using Fiber Bragg Gratings to Determine Structural Health

    National Research Council Canada - National Science Library

    Kunzler, Marley; Udd, Eric; Kreger, Stephen; Johnson, Mont; Henrie, Vaughn

    2005-01-01

    .... Using fiber Bragg gratings embedded into the weave structure of carbon fiber epoxy composites allow the capability to monitor these composites during manufacture, cure, general aging, and damage...

  6. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal; Jabbour, Ghassan E.

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  7. Investigating the interaction of x-ray free electron laser radiation with grating structure

    NARCIS (Netherlands)

    Gaudin, J.; Ozkan, C.; Chalupsky, J.; Bajt, S.; Burian, T.; Vysin, L.; Coppola, N.; Farahani, S. D.; Chapman, H. N.; Galasso, G.; Hajkova, V.; Harmand, M.; Juha, L.; Jurek, M.; Loch, R. A.; Möller, S.; Nagasono, M.; Stormer, M.; Sinn, H.; Saksl, K.; Sobierajski, R.; Schulz, J.; Sovak, P.; Toleikis, S.; Tiedtke, K.; Tschentscher, T.; Krzywinski, J.

    2012-01-01

    The interaction of free electron laser pulses with grating structure is investigated using 4.6 +/- 0.1 nm radiation at the FLASH facility in Hamburg. For fluences above 63.7 +/- 8.7 mJ/cm(2), the interaction triggers a damage process starting at the edge of the grating structure as evidenced by

  8. Sub-wavelength grating structure on the planar waveguide (Conference Presentation)

    Science.gov (United States)

    Qing-Song, Zhu; Sheng-Hui, Chen

    2016-10-01

    Making progress in recent years, with the technology of the grating, the grating period can be reduced to shrink the size of the light coupler on a waveguide. The working wavelength of the light coupler can be in the range from the near-infrared to visible. In this study , we used E-gun evaporation system with ion-beam-assisted deposition system to fabricate bottom cladding (SiO2), guiding layer (Ta2O5) and Distributed Bragg Reflector(DBR) of the waveguide on the silicon substrate. Electron-beam lithography is used to make sub-wavelength gratings and reflector grating on the planar waveguide which is a coupling device on the guiding layer. The best fabrication parameters were analyzed to deposit the film. The exposure and development times also influenced to fabricate the grating quality. The purpose is to reduce the device size and enhance coupling efficiency which maintain normal incidence of the light . We designed and developed the device using the Finite-Difference Time-Domain (FDTD) method. The grating period, depth, fill factor, film thickness, Distributed Bragg Reflector(DBR) numbers and reflector grating period have been discussed to enhance coupling efficiency and maintained normal incidence of the light. According to the simulation results, when the wavelength is 1300 nm, the coupling grating period is 720 nm and the Ta2O5 film is 460 nm with 360 nm of reflector grating period and 2 layers of Distributed Bragg Reflector, which had the optimum coupling efficiency and normal incidence angle. In the measurement, We successfully measured the TE wave coupling efficiency of the photoresist grating coupling device.

  9. Simulation Studies of the Dielectric Grating as an Accelerating and Focusing Structure

    International Nuclear Information System (INIS)

    Soong, Ken; Peralta, E.A.; Byer, R.L.; Colby, E.

    2011-01-01

    A grating-based design is a promising candidate for a laser-driven dielectric accelerator. Through simulations, we show the merits of a readily fabricated grating structure as an accelerating component. Additionally, we show that with a small design perturbation, the accelerating component can be converted into a focusing structure. The understanding of these two components is critical in the successful development of any complete accelerator. The concept of accelerating electrons with the tremendous electric fields found in lasers has been proposed for decades. However, until recently the realization of such an accelerator was not technologically feasible. Recent advances in the semiconductor industry, as well as advances in laser technology, have now made laser-driven dielectric accelerators imminent. The grating-based accelerator is one proposed design for a dielectric laser-driven accelerator. This design, which was introduced by Plettner, consists of a pair of opposing transparent binary gratings, illustrated in Fig. 1. The teeth of the gratings serve as a phase mask, ensuring a phase synchronicity between the electromagnetic field and the moving particles. The current grating accelerator design has the drive laser incident perpendicular to the substrate, which poses a laser-structure alignment complication. The next iteration of grating structure fabrication seeks to monolithically create an array of grating structures by etching the grating's vacuum channel into a fused silica wafer. With this method it is possible to have the drive laser confined to the plane of the wafer, thus ensuring alignment of the laser-and-structure, the two grating halves, and subsequent accelerator components. There has been previous work using 2-dimensional finite difference time domain (2D-FDTD) calculations to evaluate the performance of the grating accelerator structure. However, this work approximates the grating as an infinite structure and does not accurately model a

  10. Structural Design of a Compact in-Plane Nano-Grating Accelerometer

    International Nuclear Information System (INIS)

    Yao Bao-Yin; Zhou Zhen; Feng Li-Shuang; Wang Wen-Pu; Wang Xiao

    2012-01-01

    A combination of large mass, weak spring and nano-grating is the key for a nano-grating accelerometer to measure nano-G acceleration. A novel compact nano-grating accelerometer integrating a large mass with nano-grating is proposed. First, the numbers of diffraction orders are calculated. Then, structure parameters are optimized by finite element analysis to achieve a high sensitivity in an ideal vibration mode. Finally, we design the fabrication method to form such a compact nano-grating accelerometer and successfully fabricate the uniform and well-designed nano-gratings with a period of 847 nm, crater of 451 nm by an FIB/SEM dual beam system. Based on the ANSYS simulation, a nano-grating accelerometer is predicted to work in the first modal and enables the accelerometer to have displacement sensitivity at 197 nm/G with a measurement range of ±1 G, corresponding to zeroth diffraction beam optical sensitivity 1%/mG. The nano-gratings fabricated are very close to those designed ones within experimental error to lay the foundation for the sequent fabrication. These results provide a theoretical basis for the design and fabrication of nano-grating accelerometers

  11. Performance enhancement of thin film silicon solar cells based on distributed Bragg reflector & diffraction grating

    Directory of Open Access Journals (Sweden)

    R. S. Dubey

    2014-12-01

    Full Text Available The influence of various designing parameters were investigated and explored for high performance solar cells. Single layer grating based solar cell of 50 μm thickness gives maximum efficiency up to 24 % whereas same efficiency is achieved with the use of three bilayers grating based solar cell of 30 μm thickness. Remarkably, bilayer grating based solar cell design not only gives broadband absorption but also enhancement in efficiency with reduced cell thickness requirement. This absorption enhancement is attributed to the high reflection and diffraction from DBR and grating respectively. The obtained short-circuit current were 29.6, 32.9, 34.6 and 36.05 mA/cm2 of 5, 10, 20 and 30 μm cell thicknesses respectively. These presented designing efforts would be helpful to design and realize new generation of solar cells.

  12. 24% efficient PERL structure silicon solar cells

    International Nuclear Information System (INIS)

    Zhao, J.; Wang, A.; Green, M.A.

    1990-01-01

    This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

  13. Atomic and electronic structures of novel silicon surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.H. Jr.

    1997-03-01

    The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

  14. Fiber Bragg grating sensors for structural and railway applications

    Science.gov (United States)

    Tam, H. Y.; Liu, S. Y.; Guan, B. O.; Chung, W. H.; Chan, T. H.; Cheng, L. K.

    2005-02-01

    Historically, due to the high cost of optical devices, fiber-optics sensor systems were only employed in niche areas where conventional electrical sensors are not suitable. This scenario changed dramatically in the last few years following the explosion of the Internet which caused the rapid expansion of the optical fiber telecommunication industry and substantially driven down the cost of optical components. In recent years, fiber-optic sensors and particularly fiber Bragg grating (FBG) sensors have attracted a lot of interests and are being used in numerous applications. We have conducted several field trials of FBG sensors for railway applications and structural monitoring. About 30 FBG sensors were installed on the rail tracks of Kowloon-Canton Railway Corp. for train identification and speed measurements and the results obtained show that FBG sensors exhibit very good performance and could play a major role in the realization of "Smart Railway". FBG sensors were also installed on Hong Kong's landmark TsingMa Bridge, which is the world longest suspension bridge (2.2 km) that carries both trains and regular road traffic. The trials were carried out with a high-speed (up to 20 kHz) interrogation system based on CCD and also with a interrogation unit that based on scanning optical filter (up to 70 Hz). Forty FBGs sensors were divided into 3 arrays and installed on different parts of the bridge (suspension cable, rocker bearing and truss girders). The objectives of the field trial on the TsingMa Bridge are to monitor the strain of different parts of the bridge under railway load and highway load, and to compare the FBG sensors' performance with conventional resistive strain gauges already installed on the bridge. The measured results show that excellent agreement was obtained between the 2 types of sensors.

  15. Holographic construction of open structure, dispersion transmission gratings

    NARCIS (Netherlands)

    Dijkstra, J.H.; Lantwaard, L.J.

    1975-01-01

    A method of fabricating free-standing transmission gratings with line densities of the order of 1000 /nm is described. The technique involves a combination of two well-known procedures: application of photoresist and electroplating for the production of fine metal grids, and holographic

  16. Double-Grating Displacement Structure for Improving the Light Extraction Efficiency of LEDs

    Directory of Open Access Journals (Sweden)

    Zhibin Wang

    2012-01-01

    Full Text Available To improve the light extraction efficiency of light-emitting diodes (LEDs, grating patterns were etched on GaN and silver film surfaces. The grating-patterned surface etching enabled the establishment of an LED model with a double-grating displacement structure that is based on the surface plasmon resonance principle. A numerical simulation was conducted using the finite difference time domain method. The influence of different grating periods for GaN surface and silver film thickness on light extraction efficiency was analyzed. The light extraction efficiency of LEDs was highest when the grating period satisfied grating coupling conditions. The wavelength of the highest value was also close to the light wavelength of the medium. The plasmon resonance frequencies on both sides of the silver film were affected by silver film thickness. With increasing film thickness, plasmon resonance frequency tended toward the same value and light extraction efficiency reached its maximum. When the grating period for the GaN surface was 365 nm and the silver film thickness was 390 nm, light extraction efficiency reached a maximum of 55%.

  17. Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

    Science.gov (United States)

    Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

    2013-12-02

    We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

  18. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

  19. Rocket-inspired tubular catalytic microjets with grating-structured walls as guiding empennages.

    Science.gov (United States)

    Huang, Gaoshan; Wang, Jiyuan; Liu, Zhaoqian; Zhou, Dekai; Tian, Ziao; Xu, Borui; Li, Longqiu; Mei, Yongfeng

    2017-12-07

    Controllable locomotion in the micro-/nanoscale is challenging and attracts increasing research interest. Tubular microjets self-propelled by microbubbles are intensively investigated due to their high energy conversion efficiency, but the imperfection of the tubular geometry makes it harder to realize linear motion. Inspired by the macro rocket, we designed a tubular microjet with a grating-structured wall which mimics the guiding empennage of the macro rocket, and we found that the fluid can be effectively guided by the grooves. Both theoretical simulation and experimental work have been carried out, and the obtained results demonstrate that the stability margin of the grating-structured microjet can be enhanced. Compared with microjets with smooth walls, the structured microjets show an enhanced ability of moving linearly. In 10% H 2 O 2 , only 20% of the smooth microjets demonstrate linear trajectories, while 80% of the grating-structured microjets keep moving straight. The grating-structured microjet can maintain linear motion under external disturbance. We further propose to increase the stability by introducing a helical grating structure.

  20. High efficiency diffractive grating coupler based on transferred silicon nanomembrane overlay on photonic waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Tapas Kumar; Zhou Weidong [University of Texas at Arlington, Department of Electrical Engineering, NanoFAB Center, Arlington, TX 76019-0072 (United States)

    2009-04-21

    We report here the design of a new type of high efficiency grating coupler, based on single crystalline Si nanomembrane overlay and stacking. Such high efficiency diffractive grating couplers are designed for the purpose of coupling light between single mode fibres and nanophotonic waveguides, and for the coupling between multiple photonic interconnect layers for compact three-dimensional vertical integration. Two-dimensional model simulation based on eigenmode expansion shows a diffractive power-up efficiency of 81% and a fibre coupling efficiency of 64%. With nanomembrane stacking, it is feasible to integrate the side-distributed Bragg reflector and bottom reflector, which can lead to the diffractive power-up efficiency and the fibre coupling efficiency of 97% and 73.5%, respectively. For a negatively detuned coupler, the bottom reflector is not needed, and the diffractive power-up efficiency can reach 98% over a large spectral range. The device is extremely tolerant to fabrication errors.

  1. Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    2016-01-01

    In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping pro......, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow......In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping...

  2. Structural and elastic properties of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Matthai, C C [Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB (United Kingdom); Gavartin, J L [Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB (United Kingdom); Cafolla, A A [Department of Physics, Dublin City University, Dublin (Ireland)

    1995-01-15

    We have implemented a modified diffusion-limited aggregation model to simulate the porous silicon structure obtained by electrochemical dissolution. The resulting fractal structures were fully equilibrated using the molecular dynamics method. An analysis of the relaxed structure shows it to be quite stable with the presence of one-, two- and three-coordinated atoms as well as the four-coordinated atoms found in bulk silicon. It is suggested that the different substructures or nanocrystals might be responsible for the observed photoluminescence. ((orig.))

  3. Optical fiber Bragg grating-instrumented silicone liner for interface pressure measurement within prosthetic sockets of lower-limb amputees

    Science.gov (United States)

    Al-Fakih, Ebrahim; Arifin, Nooranida; Pirouzi, Gholamhossein; Mahamd Adikan, Faisal Rafiq; Shasmin, Hanie Nadia; Abu Osman, Noor Azuan

    2017-08-01

    This paper presents a fiber Bragg grating (FBG)-instrumented prosthetic silicone liner that provides cushioning for the residual limb and can successfully measure interface pressures inside prosthetic sockets of lower-limb amputees in a simple and practical means of sensing. The liner is made of two silicone layers between which 12 FBG sensors were embedded at locations of clinical interest. The sensors were then calibrated using a custom calibration platform that mimics a real-life situation. Afterward, a custom gait simulating machine was built to test the liner performance during an amputee's simulated gait. To validate the findings, the results were compared to those obtained by the commonly used F-socket mats. As the statistical findings reveal, both pressure mapping methods measured the interface pressure in a consistent way, with no significant difference (P-values ≥0.05). This pressure mapping technique in the form of a prosthetic liner will allow prosthetics professionals to quickly and accurately create an overall picture of the interface pressure distribution inside sockets in research and clinical settings, thereby improving the socket fit and amputee's satisfaction.

  4. [Spectral analysis of fiber bragg grating modulated by double long period grating and its application in smart structure monitoring].

    Science.gov (United States)

    Lu, Ji-Yun; Liang, Da-Kai; Zhang, Xiao-Li; Zhu, Zhu

    2009-12-01

    Spectrum of fiber bragg grating (FBG) sensor modulated by double long period grating (LPFG) is proposed in the paper. Double LPFG consists of two LPFGS whose center wavelengths are the same and reflection spectrum of FBG sensor is located in linear range of double LPFG transmission spectrum. Based on spectral analysis of FBG and double LPFG, reflection spectrum of FBG modulated by double LPFG is obtained and studied by use of band-hider filter characteristics for double LPFG. An FBG sensor is attached on the surface of thin steel beam, which is strained by bending, and the center wavelength of FBG sensor will shift. The spectral peak of FBG sensor modulated by double LPFG is changed correspondingly, and the spectral change will lead to variation in exit light intensity from double LPFG. Experiment demonstrates that the relation of filtering light intensity from double LPFG monitored by optical power meter to center wavelength change of FBG sensor is linear and the minimum strain of material (steel beam) detected by the modulation and demodulation system is 1.05 microepsilon. This solution is used in impact monitoring of optical fibre smart structure, and FBG sensor is applied for impulse response signal monitoring induced by low-velocity impact, when impact pendulum is loaded to carbon fiber-reinforced plastics (CFP). The acquired impact response signal and fast Fourier transform of the signal detected by FBG sensor agree with the measurement results of eddy current displacement meter attached to the FBG sensor. From the results, the present method using FBG sensor is found to be effective for monitoring the impact. The research provides a practical reference in dynamic monitoring of optical fiber smart structure field.

  5. Flexible organic solar cells including efficiency enhancing grating structures

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Liu, Yinghui; Madsen, Morten

    2013-01-01

    , such as photolithography and electron-beam lithography, besides the steps required for the bulk-heterojunction organic solar cell fabrication. After the production steps, the solar cells on polyimide are peeled off the silicon support substrates, resulting in flexible devices containing nanostructures for light absorption......In this work, a new method for the fabrication of organic solar cells containing functional light-trapping nanostructures on flexible substrates is presented. Polyimide is spin-coated on silicon support substrates, enabling standard micro- and nanotechnology fabrication techniques...

  6. Fabrication of locally micro-structured fiber Bragg gratings by fs-laser machining

    Science.gov (United States)

    Dutz, Franz J.; Stephan, Valentin; Marchi, Gabriele; Koch, Alexander W.; Roths, Johannes; Huber, Heinz P.

    2018-06-01

    Here, we describe a method for producing locally micro-structured fiber Bragg gratings (LMFGB) by fs-laser machining. This technique enables the precise and reproducible ablation of cladding material to create circumferential grooves inside the claddings of optical fibers. From initial ablation experiments we acquired optimized process parameters. The fabricated grooves were located in the middle of uniform type I fiber Bragg gratings. LMFBGs with four different groove widths of 48, 85, 135 and 205 μ { {m}} were produced. The grooves exhibited constant depths of about 30 μ {m} and steep sidewall angles. With the combination of micro-structures and fiber Bragg gratings, fiber optic sensor elements with enhanced functionalities can be achieved.

  7. Compound grating structures in photonic crystals for resonant excitation of azobenzene

    DEFF Research Database (Denmark)

    Jahns, Sabrina; Kallweit, Christine; Adam, Jost

    Photo-switchable molecules such as azobenzene are of high interest for “smart” surfaces. Such “smart” surfaces respond to external light excitation by changing their macroscopic properties. The absorbance of light on a single normal path through a layer of azobenzene immobilized on a surface......-difference time-domain (FDTD) calculations for determination of resonance positions and electric field strengths in compound grating structures. By superimposing two single-period gratings a photonic crystal can be designed supporting multiple guided mode resonances suitable to switch azobenzenes between...

  8. Mueller matrix ellipsometric detection of profile asymmetry in nanoimprinted grating structures

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xiuguo; Ma, Zhichao; Xu, Zhimou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Zhang, Chuanwei; Jiang, Hao [State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China); Liu, Shiyuan, E-mail: shyliu@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-11-21

    Mueller matrix ellipsometry (MME) is applied to detect foot-like asymmetry encountered in nanoimprint lithography (NIL) processes. We present both theoretical and experimental results which show that MME has good sensitivity to both the magnitude and direction of asymmetric profiles. The physics behind the use of MME for asymmetry detection is the breaking of electromagnetic reciprocity theorem for the zeroth-order diffraction of asymmetric gratings. We demonstrate that accurate characterization of asymmetric nanoimprinted gratings can be achieved by performing MME measurements in a conical mounting with the plane of incidence parallel to grating lines and meanwhile incorporating depolarization effects into the optical model. The comparison of MME-extracted asymmetric profile with the measurement by cross-sectional scanning electron microscopy also reveals the strong potential of this technique for in-line monitoring NIL processes, where symmetric structures are desired.

  9. Grating-based X-ray tomography of 3D food structures

    DEFF Research Database (Denmark)

    Miklos, Rikke; Nielsen, Mikkel Schou; Einarsdottir, Hildur

    2016-01-01

    A novel grating based X-ray phase-contrast tomographic method has been used to study how partly substitution of meat proteins with two different types of soy proteins affect the structure of the formed protein gel in meat emulsions. The measurements were performed at the Swiss synchrotron radiati...

  10. Design of a high-efficiency seven-port beam splitter using a dual duty cycle grating structure.

    Science.gov (United States)

    Wen, Fung Jacky; Chung, Po Sheun

    2011-07-01

    In this paper, we propose a compact seven-port beam splitter which is constructed using only a single-layer high-density grating with a dual duty cycle structure. The properties of this grating are investigated by a simplified modal method. The diffraction efficiency can be achieved around 10% more than conventional Dammann gratings while the uniformity can still be maintained at less than 1%. The effect of deviations from the design parameters on the performance of the grating is also presented.

  11. Optimal wavelength scale diffraction gratings for light trapping in solar cells

    International Nuclear Information System (INIS)

    Chong, Teck Kong; Wilson, Jonathan; Mokkapati, Sudha; Catchpole, Kylie R

    2012-01-01

    Dielectric gratings are a promising method of achieving light trapping for thin crystalline silicon solar cells. In this paper, we systematically examine the potential performance of thin silicon solar cells with either silicon (Si) or titanium dioxide (TiO 2 ) gratings using numerical simulations. The square pyramid structure with silicon nitride coating provides the best light trapping among all the symmetric structures investigated, with 89% of the expected short circuit current density of the Lambertian case. For structures where the grating is at the rear of the cell, we show that the light trapping provided by the square pyramid and the checkerboard structure is almost identical. Introducing asymmetry into the grating structures can further improve their light trapping properties. An optimized Si skewed pyramid grating on the front surface of the solar cell results in a maximum short circuit current density, J sc , of 33.4 mA cm −2 , which is 91% of the J sc expected from an ideal Lambertian scatterer. An optimized Si skewed pyramid grating on the rear performs as well as a rear Lambertian scatterer and an optimized TiO 2 grating on the rear results in 84% of the J sc expected from an optimized Si grating. The results show that submicron symmetric and skewed pyramids of Si or TiO 2 are a highly effective way of achieving light trapping in thin film solar cells. TiO 2 structures would have the additional advantage of not increasing recombination within the cell. (paper)

  12. Packaged mode multiplexer based on silicon photonics

    NARCIS (Netherlands)

    Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

    2012-01-01

    A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

  13. Laser-assisted preparation and photoelectric properties of grating-structured Pt/FTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Nai-fei, E-mail: rnf_ujs@126.com [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing, E-mail: lij_huang@126.com [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Bao-jia [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-09-30

    Highlights: • Pt layers were deposited by DC magnetron sputtering on commercial FTO glasses. • Pt/FTO films were irradiated by laser for inducing gratings and annealing. • An ideal grating-structured Pt/FTO film was obtained using a fluence of 1.05 J/cm{sup 2}. • The grating-structured Pt/FTO film exhibited excellent photoelectric properties. • Laser-assisted treatment is effective for improving performance of FTO-based films. - Abstract: In order to improve the transparency and conductivity of commercial fluorine-doped tin oxide (FTO) glass, platinum (Pt) layers were deposited on the FTO film by direct current (DC) magnetron sputtering, followed by being irradiating with a 532 nm nanosecond pulsed laser for the dual purpose of inducing grating structures and annealing. Introducing a Pt layer decreased the average transmittance (400–800 nm) and the sheet resistance of the initial FTO film from 80.2% and 8.4 Ω/sq to 68.6% and 7.9 Ω/sq, respectively. The ideal grating-structured Pt/FTO film was obtained by laser irradiation with a fluence of 1.05 J/cm{sup 2}, and X-ray diffraction (XRD) analysis confirmed that this film underwent optimal annealing. As a result, it exhibited an average transmittance (400–800 nm) of 84.1% and a sheet resistance of 6.8 Ω/sq. These results indicated that laser-assisted treatment combined with introduction of metal layer can effectively improve photoelectric properties of FTO single-layer films.

  14. High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure.

    Science.gov (United States)

    Benedikovic, Daniel; Alonso-Ramos, Carlos; Cheben, Pavel; Schmid, Jens H; Wang, Shurui; Xu, Dan-Xia; Lapointe, Jean; Janz, Siegfried; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, J Gonzalo; Molina-Fernández, Iñigo; Fédéli, Jean-Marc; Vivien, Laurent; Dado, Milan

    2015-09-15

    We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

  15. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  16. Studies on measurement of chloride ion concentration in concrete structures with long-period grating sensors

    Science.gov (United States)

    Tang, Jaw-Luen; Chiang, Tsung-Yu; Chang, Hsiang-Ping; Wang, Jian-Neng

    2006-03-01

    We report the development and demonstration of a simple and low-cost long-period grating (LPG) sensor for chloride ion concentration measurement in concrete structures. The LPG sensor is extremely sensitive to the refractive index of the medium surrounding the cladding surface of the sensing grating, thus allowing it to be used as an ambient index sensor or chemical concentration indicator with high stability and reliability. We have measured chloride ion levels in a concrete sample immersed in salt water solution with different weight concentration ranging from 0 % to 20 %, and results showed that the LPG sensor exhibited a linear decrease in the transmission loss and resonance wavelength shift when the concentration increased. The measurement accuracy for concentration of salt in water solution is estimated to be 0.6 % and the limit of detection for chloride ion is about 0.04 %. To further enhance its sensitivity for chloride concentrations, we have coated gold nanoparticles on the grating surface of the LPG sensor. The sensing mechanism is based on the sensitivity of localized surface plasmon resonance of self-assembled Au colloids on the grating portion of the LPG. With this method, a factor of two increases in sensitivity of detecting chemical solution concentrations was obtained. The advantage of this type of the sensor is relatively simple of construction and ease of use. Moreover, the sensor has the potential capability for on-site, in vivo, and remote sensing, and has the potential use for disposable sensors.

  17. Thermal Oxidation of Structured Silicon Dioxide

    DEFF Research Database (Denmark)

    Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

    2014-01-01

    The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

  18. Reduced thermal conductivity of isotopically modulated silicon multilayer structures

    DEFF Research Database (Denmark)

    Bracht, H.; Wehmeier, N.; Eon, S.

    2012-01-01

    We report measurements of the thermal conductivity of isotopically modulated silicon that consists of alternating layers of highly enriched silicon-28 and silicon-29. A reduced thermal conductivity of the isotopically modulated silicon compared to natural silicon was measured by means of time......-resolved x-ray scattering. Comparison of the experimental results to numerical solutions of the corresponding heat diffusion equations reveals a factor of three lower thermal conductivity of the isotope structure compared to natural Si. Our results demonstrate that the thermal conductivity of silicon can...

  19. Angle-independent structural colors of silicon

    DEFF Research Database (Denmark)

    Højlund-Nielsen, Emil; Weirich, Johannes; Nørregaard, Jesper

    2014-01-01

    Structural colors are optical phenomena of physical origin, where microscale and nanoscale structures determine the reflected spectrum of light. Artificial structural colors have been realized within recent years. However, multilayer structures require substantial fabrication. Instead we considered...... one-layer surface textures of silicon.We explored four patterns of square structures in a square lattice with periods of 500, 400, 300, and 200 nm. The reflectivity and daylight-colors were measured and compared with simulations based on rigorously coupledwave analysis with excellent agreement. Based...... on the 200-nm periodic pattern, it was found that angle-independent specular colors up to 60 deg of incidence may be provided. The underlying mechanisms include (1) the suppression of diffraction and (2) a strong coupling of light to localized surface states. The strong coupling yields absorption anomalies...

  20. Structural Health Monitoring with Fiber Bragg Grating and Piezo Arrays

    Science.gov (United States)

    Black, Richard J.; Faridian, Ferey; Moslehi, Behzad; Sotoudeh, Vahid

    2012-01-01

    Structural health monitoring (SHM) is one of the most important tools available for the maintenance, safety, and integrity of aerospace structural systems. Lightweight, electromagnetic-interference- immune, fiber-optic sensor-based SHM will play an increasing role in more secure air transportation systems. Manufacturers and maintenance personnel have pressing needs for significantly improving safety and reliability while providing for lower inspection and maintenance costs. Undetected or untreated damage may grow and lead to catastrophic structural failure. Damage can originate from the strain/stress history of the material, imperfections of domain boundaries in metals, delamination in multi-layer materials, or the impact of machine tools in the manufacturing process. Damage can likewise develop during service life from wear and tear, or under extraordinary circumstances such as with unusual forces, temperature cycling, or impact of flying objects. Monitoring and early detection are key to preventing a catastrophic failure of structures, especially when these are expected to perform near their limit conditions.

  1. Porous silicon nanoparticles for target drag delivery: structure and morphology

    International Nuclear Information System (INIS)

    Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

    2015-01-01

    Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

  2. Large area fabrication of plasmonic nanoparticle grating structure by conventional scanning electron microscope

    International Nuclear Information System (INIS)

    Sudheer,; Tiwari, P.; Rai, V. N.; Srivastava, A. K.; Mukharjee, C.

    2015-01-01

    Plasmonic nanoparticle grating (PNG) structure of different periods has been fabricated by electron beam lithography using silver halide based transmission electron microscope film as a substrate. Conventional scanning electron microscope is used as a fabrication tool for electron beam lithography. Optical microscope and energy dispersive spectroscopy (EDS) have been used for its morphological and elemental characterization. Optical characterization is performed by UV-Vis absorption spectroscopic technique

  3. Porous Silicon Structures as Optical Gas Sensors.

    Science.gov (United States)

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  4. High coincidence-to-accidental ratio continuous-wave photon-pair generation in a grating-coupled silicon strip waveguide

    DEFF Research Database (Denmark)

    Guo, Kai; Christensen, Erik Nicolai; Christensen, Jesper Bjerge

    2017-01-01

    We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber......-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of g(H)((2)) (0) = 0.12, demonstrating that our source operates in the single- photon regime with low noise. (C) 2017 The Japan Society of Applied Physics...

  5. All-Si photodetector for telecommunication wavelength based on subwavelength grating structure and critical coupling

    Directory of Open Access Journals (Sweden)

    Alireza Taghizadeh

    2017-09-01

    Full Text Available We propose an efficient planar all-Si internal photoemission photodetector operating at the telecommunication wavelength of 1550 nm and numerically investigate its optical and electrical properties. The proposed polarization-sensitive detector is composed of an appropriately engineered subwavelength grating structure topped with a silicide layer of nanometers thickness as an absorbing material. It is shown that a nearly-perfect light absorption is possible for the thin silicide layer by its integration to the grating resonator. The absorption is shown to be maximized when the critical coupling condition is satisfied. Simulations show that the external quantum efficiency of the proposed photodetector with a 2-nm-thick PtSi absorbing layer at the center wavelength of 1550 nm can reach up to ∼60%.

  6. Excitation of plasmon modes in a graphene monolayer supported on a 2D subwavelength silicon grating

    DEFF Research Database (Denmark)

    Zhu, Xiaolong; Yan, Wei; Jepsen, Peter Uhd

    2013-01-01

    Graphene is a two-dimensional (2D) carbon-based material, whose unique electronic and optical properties have attracted a great deal of research interest. Despite the fact that graphene is an atomically thin layer the optical absorption of a single layer can be as high as 2.3% (defined by the fine...... structure constant). Nevertheless, for light-matter interactions this number is imposing challenges and restrictions for graphene-based optoelectronic devices. One promising way to enhance optical absorption is to excite graphene-plasmon polaritons (GPPs) supported by graphene....

  7. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  8. Numerical Simulation of a Novel Sensing Approach Based on Abnormal Blocking by Periodic Grating Strips near the Silicon Wire Waveguide

    Directory of Open Access Journals (Sweden)

    Andrei Tsarev

    2018-05-01

    Full Text Available This paper discusses the physical nature and the numerical modeling of a novel approach of periodic structures for applications as photonic sensors. The sensing is based on the high sensitivity to the cover index change of the notch wavelength. This sensitivity is due to the effect of abnormal blocking of the guided wave propagating along the silicon wire with periodic strips overhead it through the silica buffer. The structure sensing is numerically modeled by 2D and 3D finite difference time domain (FDTD method, taking into account the waveguide dispersion. The modeling of the long structures (more than 1000 strips is accomplished by the 2D method of lines (MoL with a maximal implementation of the analytical feature of the method. It is proved that the effect of abnormal blocking could be used for the construction of novel types of optical sensors.

  9. Normal incidence spectrophotometer using high density transmission grating technology and highly efficiency silicon photodiodes for absolute solar EUV irradiance measurements

    Science.gov (United States)

    Ogawa, H. S.; Mcmullin, D.; Judge, D. L.; Korde, R.

    1992-01-01

    New developments in transmission grating and photodiode technology now make it possible to realize spectrometers in the extreme ultraviolet (EUV) spectral region (wavelengths less than 1000 A) which are expected to be virtually constant in their diffraction and detector properties. Time dependent effects associated with reflection gratings are eliminated through the use of free standing transmission gratings. These gratings together with recently developed and highly stable EUV photodiodes have been utilized to construct a highly stable normal incidence spectrophotometer to monitor the variability and absolute intensity of the solar 304 A line. Owing to its low weight and compactness, such a spectrometer will be a valuable tool for providing absolute solar irradiance throughout the EUV. This novel instrument will also be useful for cross-calibrating other EUV flight instruments and will be flown on a series of Hitchhiker Shuttle Flights and on SOHO. A preliminary version of this instrument has been fabricated and characterized, and the results are described.

  10. MOS structures containing silicon nanoparticles for memory device applications

    International Nuclear Information System (INIS)

    Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

    2008-01-01

    Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

  11. Porous Silicon Structures as Optical Gas Sensors

    Directory of Open Access Journals (Sweden)

    Igor A. Levitsky

    2015-08-01

    Full Text Available We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  12. Fiber Bragg grating sensor based on cantilever structure embedded in polymer 3D printed material

    Science.gov (United States)

    Lima, Rita; Tavares, R.; Silva, S. O.; Abreu, P.; Restivo, Maria T.; Frazão, O.

    2017-04-01

    A cantilever structure in 3D printed based on a fiber Bragg grating (FBG) sensor embedded in polymer material is proposed. The FBG sensor was embedded in 3D printed coating and was tested under three physical parameters: displacement, temperature and vibration. The sensor was tested in displacement in two different regions of the cantilever, namely, on its midpoint and end point. The maximum displacement sensitivity achieved was (3 +/- 0.1) pm/mm for end point displacement, and a temperature sensitivity of (30 +/- 1) pm/°C was also attained. In the case of vibration measurements it was possible to obtain a 10.23Hz-low frequency oscillation.

  13. Experimental study of broadband unidirectional splitting in photonic crystal gratings with broken structural symmetry

    Science.gov (United States)

    Colak, Evrim; Serebryannikov, Andriy E.; Ozgur Cakmak, A.; Ozbay, Ekmel

    2013-04-01

    It is experimentally demonstrated that the combination of diode and splitter functions can be realized in one broadband reciprocal device. The suggested performance is based on the dielectric photonic crystal grating whose structural symmetry is broken owing to non-deep corrugations placed at one of the two interfaces. The study has been performed at a normally incident beam-type illumination obtained from a microwave horn antenna. The two unidirectionally transmitted, deflected beams can show large magnitude and high contrast, while the angular distance between their maxima is 90° and larger. The dual-band unidirectional splitting is possible when using TM and TE polarizations.

  14. Synthesis of silicon nanowires and novel nano-dendrite structures

    International Nuclear Information System (INIS)

    Sinha, Saion; Gao Bo; Zhou, Otto

    2004-01-01

    We report a study on the effects of various parameters on the synthesis of silicon nanowires (5--50 nm in diameter) by pulsed laser ablation. A novel silicon nanodendrite structure is observed by changing some of the growth parameters abruptly. This growth mechanism is explained by a qualitative model. These nanodendrites show a promise of being used as a template in fabricating nanocircuits. Thermal quantum confinement effects were also observed on the silicon nanowires and have been reported

  15. Thermal radiative properties of a photonic crystal structure sandwiched by SiC gratings

    International Nuclear Information System (INIS)

    Wang, Weijie; Fu, Ceji; Tan, Wenchang

    2014-01-01

    Spectral and directional control of thermal emission holds substantial importance in applications where heat transfer is predominantly by thermal radiation. In this work, we investigate the spectral and directional properties of thermal emission from a novel structure, which is constituted with a photonic crystal (PC) sandwiched by SiC gratings. Numerical results based on the RCWA algorithm reveal that greatly enhanced emissivity can be achieved in a broad frequency band and in a wide range of angle of emission. This promising emission feature is found to be caused by excitation of surface phonon polaritons (SPhPs), PC mode, magnetic polaritons (MPs) and Fabry–Pérot resonance from high order diffracted waves, as well as the coupling between different resonant modes. We show that the broad enhanced emissivity band can be manipulated by adjusting the dimensional parameters of the structure properly. -- Highlights: ► We propose a novel structure made of a photonic crystal sandwiched by SiC gratings. ► High emissivity can be achieved in a broad spectral band and angle range. ► We explain the result by excitation of multiple excited modes and their coupling

  16. Low crosstalk Arrayed Waveguide Grating with Cascaded Waveguide Grating Filter

    International Nuclear Information System (INIS)

    Deng Yang; Liu Yuan; Gao Dingshan

    2011-01-01

    We propose a highly compact and low crosstalk arrayed waveguide grating (AWG) with cascaded waveguide grating (CWGF). The side lobes of the silicon nanowire AWG, which are normally introduced by fabrication errors, can be effectively suppressed by the CWGF. And the crosstalk can be improved about 15dB.

  17. Current-voltage characteristics of porous-silicon structures

    International Nuclear Information System (INIS)

    Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

    1996-01-01

    I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

  18. Structural modification of silicon during the formation process of porous silicon

    International Nuclear Information System (INIS)

    Martin-Palma, R.J.; Pascual, L.; Landa-Canovas, A.R.; Herrero, P.; Martinez-Duart, J.M.

    2005-01-01

    Direct examination of porous silicon (PS) by the use of high resolution transmission electron microscopy (HRTEM) allowed us to perform a deep insight into the formation mechanisms of this material. In particular, the structure of the PS/Si interface and that of the silicon nanocrystals that compose porous silicon were analyzed in detail. Furthermore, image processing was used to study in detail the structure of PS. The mechanism of PS formation and lattice matching between the PS layer and the Si substrate is analyzed and discussed. Finally, a formation mechanism for PS based on the experimental observations is proposed

  19. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  20. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  1. Bragg gratings: Optical microchip sensors

    Science.gov (United States)

    Watts, Sam

    2010-07-01

    A direct UV writing technique that can create multiple Bragg gratings and waveguides in a planar silica-on-silicon chip is enabling sensing applications ranging from individual disposable sensors for biotechnology through to multiplexed sensor networks in pharmaceutical manufacturing.

  2. Graphene based silicon–air grating structure to realize electromagnetically-induced-transparency and slow light effect

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Buzheng; Liu, Huaiqing [Key Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing 100044 (China); Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044 (China); Ren, Guobin, E-mail: gbren@bjtu.edu.cn [Key Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing 100044 (China); Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044 (China); Yang, Yuguang; Ye, Shen; Pei, Li; Jian, Shuisheng [Key Lab of All Optical Network & Advanced Telecommunication Network of EMC, Beijing Jiaotong University, Beijing 100044 (China); Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044 (China)

    2017-01-23

    Highlights: • The EIT and slow light effect are achieved by our novel graphene based structure. • Excellent tunability of wide wavelength range can be obtained only by a small change in Fermi energy level. • The group velocity of incident light is reduced to more than 1/600 of that in vacuum. • Position control is realized by designing a graded period grating. - Abstract: A broad band tunable graphene based silicon–air grating structure is proposed. Electromagnetically-induced-transparency (EIT) window can be successfully tuned by virtually setting the desired Fermi energy levels on graphene sheets. Carrier mobility plays an important role in modulating the resonant depth. Furthermore, by changing the grating periods, light can be trapped at corresponding resonant positions where slow down factor is relatively larger than in the previous works. This structure can be used as a highly tunable optoelectronic device such as optical filter, broad-band modulator, plasmonic switches and buffers.

  3. Theoretical modeling and design of photonic structures in zeolite nanocomposites for gas sensing. Part I: surface relief gratings.

    Science.gov (United States)

    Cody, D; Naydenova, I

    2017-12-01

    The suitability of holographic structures fabricated in zeolite nanoparticle-polymer composite materials for gas sensing applications has been investigated. Theoretical modeling of the sensor response (i.e., change in hologram readout due to a change in refractive index modulation or thickness as a result of gas adsorption) of different sensor designs was carried out using Raman-Nath theory and Kogelnik's coupled wave theory. The influence of a range of parameters on the sensor response of holographically recorded surface and volume photonic grating structures has been studied, namely the phase difference between the diffracted and probe beam introduced by the grating, grating geometry, thickness, spatial frequency, reconstruction wavelength, and zeolite nanoparticle refractive index. From this, the optimum fabrication conditions for both surface and volume holographic gas sensor designs have been identified. Here, in part I, results from theoretical modeling of the influence of design on the sensor response of holographically inscribed surface relief structures for gas sensing applications is reported.

  4. Birefringence Bragg Binary (3B) grating, quasi-Bragg grating and immersion gratings

    Science.gov (United States)

    Ebizuka, Noboru; Morita, Shin-ya; Yamagata, Yutaka; Sasaki, Minoru; Bianco, Andorea; Tanabe, Ayano; Hashimoto, Nobuyuki; Hirahara, Yasuhiro; Aoki, Wako

    2014-07-01

    A volume phase holographic (VPH) grating achieves high angular dispersion and very high diffraction efficiency for the first diffraction order and for S or P polarization. However the VPH grating could not achieve high diffraction efficiency for non-polarized light at a large diffraction angle because properties of diffraction efficiencies for S and P polarizations are different. Furthermore diffraction efficiency of the VPH grating extinguishes toward a higher diffraction order. A birefringence binary Bragg (3B) grating is a thick transmission grating with optically anisotropic material such as lithium niobate or liquid crystal. The 3B grating achieves diffraction efficiency up to 100% for non-polarized light by tuning of refractive indices for S and P polarizations, even in higher diffraction orders. We fabricated 3B grating with liquid crystal and evaluated the performance of the liquid crystal grating. A quasi-Bragg (QB) grating, which consists long rectangle mirrors aligned in parallel precisely such as a window shade, also achieves high diffraction efficiency toward higher orders. We fabricated QB grating by laminating of silica glass substrates and glued by pressure fusion of gold films. A quasi-Bragg immersion (QBI) grating has smooth mirror hypotenuse and reflector array inside the hypotenuse, instead of step-like grooves of a conventional immersion grating. An incident beam of the QBI grating reflects obliquely at a reflector, then reflects vertically at the mirror surface and reflects again at the same reflector. We are going to fabricate QBI gratings by laminating of mirror plates as similar to fabrication of the QB grating. We will also fabricate silicon and germanium immersion gratings with conventional step-like grooves by means of the latest diamond machining methods. We introduce characteristics and performance of these gratings.

  5. Scalable Inkjet-Based Structural Color Printing by Molding Transparent Gratings on Multilayer Nanostructured Surfaces.

    Science.gov (United States)

    Jiang, Hao; Kaminska, Bozena

    2018-04-24

    To enable customized manufacturing of structural colors for commercial applications, up-scalable, low-cost, rapid, and versatile printing techniques are highly demanded. In this paper, we introduce a viable strategy for scaling up production of custom-input images by patterning individual structural colors on separate layers, which are then vertically stacked and recombined into full-color images. By applying this strategy on molded-ink-on-nanostructured-surface printing, we present an industry-applicable inkjet structural color printing technique termed multilayer molded-ink-on-nanostructured-surface (M-MIONS) printing, in which structural color pixels are molded on multiple layers of nanostructured surfaces. Transparent colorless titanium dioxide nanoparticles were inkjet-printed onto three separate transparent polymer substrates, and each substrate surface has one specific subwavelength grating pattern for molding the deposited nanoparticles into structural color pixels of red, green, or blue primary color. After index-matching lamination, the three layers were vertically stacked and bonded to display a color image. Each primary color can be printed into a range of different shades controlled through a half-tone process, and full colors were achieved by mixing primary colors from three layers. In our experiments, an image size as big as 10 cm by 10 cm was effortlessly achieved, and even larger images can potentially be printed on recombined grating surfaces. In one application example, the M-MIONS technique was used for printing customizable transparent color optical variable devices for protecting personalized security documents. In another example, a transparent diffractive color image printed with the M-MIONS technique was pasted onto a transparent panel for overlaying colorful information onto one's view of reality.

  6. Graphene ribbon growth on structured silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

    2017-11-15

    Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Structural Health Monitoring of Superconducting Magnets at CERN Using Fiber Bragg Grating Sensors

    CERN Document Server

    Chiuchiolo, A; Perez, J C; Bajas, H; Guinchard, M; Giordano, M; Breglio, G; Consales, M; Cusano, A

    2014-01-01

    The use of Fiber Bragg Grating sensors is becoming particularly challenging for monitoring different parameters in extreme operative conditions such as ultra-low temperatures, high electromagnetic fields and strong mechanical stresses. This work reports the use of the FBG for a new generation of accelerator magnets with the goal to develop an adequate sensing technology able to provide complementary or alternative information to the conventional strain gauges through the whole service life of the magnet. The study is focused on the mechanical performances of the magnet structure, which has to preserve the sensitive coils from any damage during the entire magnet fabrication process preventing even microscopic movements of the winding that can eventually initiate a transition from superconducting to normal conducting state of the material used (called in the specific literature as “quench”). The FBGs have been glued on the aluminium structure of two magnets prototypes by using an adhesive suitable for cryog...

  8. Fabrication of three-dimensional polymer quadratic nonlinear grating structures by layer-by-layer direct laser writing technique

    Science.gov (United States)

    Bich Do, Danh; Lin, Jian Hung; Diep Lai, Ngoc; Kan, Hung-Chih; Hsu, Chia Chen

    2011-08-01

    We demonstrate the fabrication of a three-dimensional (3D) polymer quadratic nonlinear (χ(2)) grating structure. By performing layer-by-layer direct laser writing (DLW) and spin-coating approaches, desired photobleached grating patterns were embedded in the guest--host dispersed-red-1/poly(methylmethacrylate) (DR1/PMMA) active layers of an active-passive alternative multilayer structure through photobleaching of DR1 molecules. Polyvinyl-alcohol and SU8 thin films were deposited between DR1/PMMA layers serving as a passive layer to separate DR1/PMMA active layers. After applying the corona electric field poling to the multilayer structure, nonbleached DR1 molecules in the active layers formed polar distribution, and a 3D χ(2) grating structure was obtained. The χ(2) grating structures at different DR1/PMMA nonlinear layers were mapped by laser scanning second harmonic (SH) microscopy, and no cross talk was observed between SH images obtained from neighboring nonlinear layers. The layer-by-layer DLW technique is favorable to fabricating hierarchical 3D polymer nonlinear structures for optoelectronic applications with flexible structural design.

  9. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  10. Ground state structures and properties of small hydrogenated silicon

    Indian Academy of Sciences (India)

    Unknown

    To understand the structural evolutions and properties of silicon cluster due to hydrogenation ... partly due to the growing importance of these systems in applications like .... of the system. Using the Lagrangian (1), equations of motions for the.

  11. Strain measurements using Fiber Bragg Grating sensors in Structural Health Monitoring

    Directory of Open Access Journals (Sweden)

    Daniela ENCIU

    2017-06-01

    Full Text Available The paper presents some results obtained within a project of the “NUCLEU” Program financed by the Ministry of Research and Innovation-ANCS. The project supposes, among others, the design and the realization of a demonstrator for strain and stress measurements made with Fiber Bragg Gratings optical sensors. The paper details the construction of the demonstrator. The strain measurements induced in a cantilevered aluminum plate are compared with the analytical values provided by a mathematical model, and with the numerical values obtained by FEM analysis. The consistency of these comparative data indicates the achievement within the project of a level of competence necessary for later use of FBG sensors in the applicative researches involving the aerospace structures monitoring.

  12. Design of a wideband multilayer grating spectrometer for the study of electronic structure of thin-film CIS solar cells

    International Nuclear Information System (INIS)

    Imazono, Takashi; Koike, Masato; Kuramoto, Satoshi; Nagano, Tetsuya; Koeda, Masaru; Moriya, Naoji

    2014-01-01

    A soft x-ray emission spectrometer equipped with a wideband Ni/C multilayer-coated laminar-type varied-line-spacing holographic grating is designed to analyze the electronic structure in thin-film copper indium selenide (CIS) solar cells nondestructively by soft x-ray emission spectroscopy. The spectrometer equipped with the multilayer grating thus designed allows us to detect the L emission lines of Cu, In, and Se simultaneously from a CIS absorber layer in the 1–3.5 keV range at a constant angle of incidence. (author)

  13. Enhancement of terahertz radiation in a Smith-Purcell backward-wave oscillator by an inverse wet-etched grating

    International Nuclear Information System (INIS)

    Kim, Jung-Il; Jeon, Seok-Gy; Kim, Geun-Ju; Kim, Jaehong

    2011-01-01

    A terahertz (THz) Smith-Purcell (SP) backward-wave oscillator with an inverse wet-etched grating based on silicon has been proposed to enhance radiation intensity. This grating strengthens the interactions between an electron beam and the evanescent wave due to the adjacent surface structure between gratings that improves the magnitude of the electric field up to 1.7 times compared to the conventional rectangular gratings. A two-dimensional particle-in-cell (PIC) simulation shows that the radiated power is increased up to 2.3 times higher at the radiated frequency of 0.66 THz for an electron-beam energy of 30 keV.

  14. Strain Measurement Using Embedded Fiber Bragg Grating Sensors Inside an Anchored Carbon Fiber Polymer Reinforcement Prestressing Rod for Structural Monitoring

    DEFF Research Database (Denmark)

    Kerrouche, Abdelfateh; Boyle, William J.O.; Sun, Tong

    2009-01-01

    Results are reported from a study carried out using a series of Bragg grating based optical fiber sensors written into a very short length (60mm) optical fiber net work and integrated into carbon fiber polymer reinforcement (CFPR) rod. Such rods are used as reinforcements in concrete structures...

  15. Design and Analysis of Multilayered Waveguide Structure With Metal-Dielectric Gratings for Sensing With Reflection Narrowband Notch Filter

    Directory of Open Access Journals (Sweden)

    Guiju ZHANG

    2015-11-01

    Full Text Available Developments in micro and nanofabrication technologies have led a variety of grating waveguide structures (GWS being proposed and implemented in optics and laser application systems. A new design of multilayered nanostructure double-grating is described for reflection notch filter. Thin metal film and dielectric film are used and designed with one-dimensional composite gratings. The results calculated by rigorous coupled-wave analysis (RCWA present that the thin metal film between substrate and grating can produce significant attenuated reflections and efficiency in a broad reflected spectral range. The behavior of such a reflection filter is evaluated for refractive index sensing, which can be applied inside the integrated waveguide structure while succeeding cycles in measurement. The filter peaks are designed and obtained in a visible range with full width half maximum (FWHM of several nanometers to less than one nanometer. The multilayered structure shows a sensitivity of refractive index of 220nm/RIU as changing the surroundings. The reflection spectra are studied under different periods, depths and duty cycles. The passive structure and its characteristics can achieve practical applications in various fields, such as optical sensing, color filtering, Raman spectroscopy and laser technology.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9625

  16. Structurally controlled deposition of silicon onto nanowires

    Science.gov (United States)

    Wang, Weijie; Liu, Zuqin; Han, Song; Bornstein, Jonathan; Stefan, Constantin Ionel

    2018-03-20

    Provided herein are nanostructures for lithium ion battery electrodes and methods of fabrication. In some embodiments, a nanostructure template coated with a silicon coating is provided. The silicon coating may include a non-conformal, more porous layer and a conformal, denser layer on the non-conformal, more porous layer. In some embodiments, two different deposition processes, e.g., a PECVD layer to deposit the non-conformal layer and a thermal CVD process to deposit the conformal layer, are used. Anodes including the nanostructures have longer cycle lifetimes than anodes made using either a PECVD or thermal CVD method alone.

  17. Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

    International Nuclear Information System (INIS)

    Sieck, A.

    2000-01-01

    In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

  18. Imaging, structural, and chemical analysis of silicon nanowires

    International Nuclear Information System (INIS)

    Barsotti, R.J. Jr.; Fischer, J.E.; Lee, C.H.; Mahmood, J.; Adu, C.K.W.; Eklund, P.C.

    2002-01-01

    Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7 nm±2.9 nm surrounded by an amorphous SiO x sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made

  19. Confocal imaging of protein distributions in porous silicon optical structures

    International Nuclear Information System (INIS)

    De Stefano, Luca; D'Auria, Sabato

    2007-01-01

    The performances of porous silicon optical biosensors depend strongly on the arrangement of the biological probes into their sponge-like structures: it is well known that in this case the sensing species do not fill the pores but instead cover their internal surface. In this paper, the direct imaging of labelled proteins into different porous silicon structures by using a confocal laser microscope is reported. The distribution of the biological matter in the nanostructured material follows a Gaussian behaviour which is typical of the diffusion process in the porous media but with substantial differences between a porous silicon monolayer and a multilayer such as a Bragg mirror. Even if semi-quantitative, the results can be very useful in the design of the porous silicon based biosensing devices

  20. Neural coding of image structure and contrast polarity of Cartesian, hyperbolic, and polar gratings in the primary and secondary visual cortex of the tree shrew.

    Science.gov (United States)

    Poirot, Jordan; De Luna, Paolo; Rainer, Gregor

    2016-04-01

    We comprehensively characterize spiking and visual evoked potential (VEP) activity in tree shrew V1 and V2 using Cartesian, hyperbolic, and polar gratings. Neural selectivity to structure of Cartesian gratings was higher than other grating classes in both visual areas. From V1 to V2, structure selectivity of spiking activity increased, whereas corresponding VEP values tended to decrease, suggesting that single-neuron coding of Cartesian grating attributes improved while the cortical columnar organization of these neurons became less precise from V1 to V2. We observed that neurons in V2 generally exhibited similar selectivity for polar and Cartesian gratings, suggesting that structure of polar-like stimuli might be encoded as early as in V2. This hypothesis is supported by the preference shift from V1 to V2 toward polar gratings of higher spatial frequency, consistent with the notion that V2 neurons encode visual scene borders and contours. Neural sensitivity to modulations of polarity of hyperbolic gratings was highest among all grating classes and closely related to the visual receptive field (RF) organization of ON- and OFF-dominated subregions. We show that spatial RF reconstructions depend strongly on grating class, suggesting that intracortical contributions to RF structure are strongest for Cartesian and polar gratings. Hyperbolic gratings tend to recruit least cortical elaboration such that the RF maps are similar to those generated by sparse noise, which most closely approximate feedforward inputs. Our findings complement previous literature in primates, rodents, and carnivores and highlight novel aspects of shape representation and coding occurring in mammalian early visual cortex. Copyright © 2016 the American Physiological Society.

  1. Structural properties of silicon clusters: An empirical potential study

    International Nuclear Information System (INIS)

    Gong, X.G.; Zheng, Q.Q.; He Yizhen

    1993-09-01

    By using our newly proposed empirical interatomic potential for silicon, the structure and some dynamical properties of silicon cluster Si n (10 ≤ n ≤ 24) have been studied. It is found that the obtained results are close to those from ab-initio methods. From present results, we can gain a new insight into the understanding of the experimental data on the Si n clusters. (author). 20 refs, 6 figs

  2. Stabilisation of the [6]-prismane structure by silicon substitution

    Indian Academy of Sciences (India)

    Asif Equbal

    structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is observed ... a theoretical point of view.1–4 However, experimental evidence .... For multi-Si-substituted benzene, the stability of the dimer depends on .... The light green color in the ring indicates silicon atoms.

  3. Reconstruction of structural damage based on reflection intensity spectra of fiber Bragg gratings

    International Nuclear Information System (INIS)

    Huang, Guojun; Wei, Changben; Chen, Shiyuan; Yang, Guowei

    2014-01-01

    We present an approach for structural damage reconstruction based on the reflection intensity spectra of fiber Bragg gratings (FBGs). Our approach incorporates the finite element method, transfer matrix (T-matrix), and genetic algorithm to solve the inverse photo-elastic problem of damage reconstruction, i.e. to identify the location, size, and shape of a defect. By introducing a parameterized characterization of the damage information, the inverse photo-elastic problem is reduced to an optimization problem, and a relevant computational scheme was developed. The scheme iteratively searches for the solution to the corresponding direct photo-elastic problem until the simulated and measured (or target) reflection intensity spectra of the FBGs near the defect coincide within a prescribed error. Proof-of-concept validations of our approach were performed numerically and experimentally using both holed and cracked plate samples as typical cases of plane-stress problems. The damage identifiability was simulated by changing the deployment of the FBG sensors, including the total number of sensors and their distance to the defect. Both the numerical and experimental results demonstrate that our approach is effective and promising. It provides us with a photo-elastic method for developing a remote, automatic damage-imaging technique that substantially improves damage identification for structural health monitoring. (paper)

  4. Femtosecond-pulse inscription of fiber Bragg gratings with single or multiple phase-shifts in the structure

    Science.gov (United States)

    Wolf, Alexey; Dostovalov, Alexandr; Skvortsov, Mikhail; Raspopin, Kirill; Parygin, Alexandr; Babin, Sergey

    2018-05-01

    In this work, long high-quality fiber Bragg gratings with phase shifts in the structure are inscribed directly in the optical fiber by point-by-point technique using femtosecond laser pulses. Phase shifts are introduced during the inscription process with a piezoelectric actuator, which rapidly shifts the fiber along the direction of its movement in a chosen point of the grating with a chosen shift value. As examples, single and double π phase shifts are introduced in fiber Bragg gratings with a length up to 34 mm in passive fibers, which provide corresponding transmission peaks with bandwidth less than 1 pm. It is shown that 37 mm π -phase-shifted grating inscribed in an active Er-doped fiber forms high-quality DFB laser cavity generating single-frequency radiation at 1550 nm with bandwidth of 20 kHz and signal-to-noise ratio of >70 dB. The inscription technique has a high degree of performance and flexibility and can be easily implemented in fibers of various types.

  5. Elementary structural building blocks encountered in silicon surface reconstructions

    International Nuclear Information System (INIS)

    Battaglia, Corsin; Monney, Claude; Didiot, Clement; Schwier, Eike Fabian; Garnier, Michael Gunnar; Aebi, Philipp; Gaal-Nagy, Katalin; Onida, Giovanni

    2009-01-01

    Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as well as their impact on the electronic structure of the surface. (topical review)

  6. Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

    Directory of Open Access Journals (Sweden)

    Jin-Seok Lee

    2012-01-01

    Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

  7. Structure and mechanical properties of the irradiated silicon

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Khamraeva, R.N.; Ummatov, Kh.D.; Khajdarov, T.Kh.; Rustamova, V.M.

    2001-01-01

    In this work the results of study for radiation influence on phase content and mechanical properties of mono- and polycrystalline silicon are presented. Samples were irradiated at room temperature for 10 hours by X-quanta with mean energy 35 keV. Structural measurements were carried out on the DRON-UM1 with CuK α =1.542 Angstrom. Crystal internal friction was measurement by the ultrasonic resonance method at frequency 39 k Hz. Structure examinations show the impurity phase presence in the crystalline quartz form in the initial silicon mono- and polycrystals

  8. Fiber Bragg Grating Sensor System for Monitoring Smart Composite Aerospace Structures

    Science.gov (United States)

    Moslehi, Behzad; Black, Richard J.; Gowayed, Yasser

    2012-01-01

    Lightweight, electromagnetic interference (EMI) immune, fiber-optic, sensor- based structural health monitoring (SHM) will play an increasing role in aerospace structures ranging from aircraft wings to jet engine vanes. Fiber Bragg Grating (FBG) sensors for SHM include advanced signal processing, system and damage identification, and location and quantification algorithms. Potentially, the solution could be developed into an autonomous onboard system to inspect and perform non-destructive evaluation and SHM. A novel method has been developed to massively multiplex FBG sensors, supported by a parallel processing interrogator, which enables high sampling rates combined with highly distributed sensing (up to 96 sensors per system). The interrogation system comprises several subsystems. A broadband optical source subsystem (BOSS) and routing and interface module (RIM) send light from the interrogation system to a composite embedded FBG sensor matrix, which returns measurand-dependent wavelengths back to the interrogation system for measurement with subpicometer resolution. In particular, the returned wavelengths are channeled by the RIM to a photonic signal processing subsystem based on powerful optical chips, then passed through an optoelectronic interface to an analog post-detection electronics subsystem, digital post-detection electronics subsystem, and finally via a data interface to a computer. A range of composite structures has been fabricated with FBGs embedded. Stress tensile, bending, and dynamic strain tests were performed. The experimental work proved that the FBG sensors have a good level of accuracy in measuring the static response of the tested composite coupons (down to submicrostrain levels), the capability to detect and monitor dynamic loads, and the ability to detect defects in composites by a variety of methods including monitoring the decay time under different dynamic loading conditions. In addition to quasi-static and dynamic load monitoring, the

  9. Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

    International Nuclear Information System (INIS)

    Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

    2000-01-01

    Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

  10. Interactions of structural defects with metallic impurities in multicrystalline silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-01-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

  11. Development of a micromechanical pitch-tunable grating with reflective/transmissive dual working modes

    International Nuclear Information System (INIS)

    Yu, Yi-Ting; Yuan, Wei-Zheng; Li, Tai-Ping; Yan, Bin

    2010-01-01

    In this paper, a micromechanical pitch-tunable grating with the capability of working in both reflective and transmissive modes is developed by using the silicon-on-glass (SOG) process. At a voltage of 65 V, the grating period is measured to increase by 4.62%. A simple optical experiment is performed to demonstrate how the proposed grating works in both modes. Then, experiments to measure the change of the diffraction angle versus driving voltage in both reflective and transmissive modes are designed and carried out utilizing an area-arrayed charge-coupled device (CCD), and the results are in good agreement with the theoretical calculation. Discussions on the structural configuration and diffraction efficiency of the proposed grating are presented. The grating presented provides better flexibility in the design and development of application systems.

  12. High efficiency grating couplers based on shared process with CMOS MOSFETs

    International Nuclear Information System (INIS)

    Qiu Chao; Sheng Zhen; Wu Ai-Min; Wang Xi; Zou Shi-Chang; Gan Fu-Wan; Li Le; Albert Pang

    2013-01-01

    Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal—oxide—semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as a gate in the CMOS metal—oxide—semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ∼ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  13. High performance Si immersion gratings patterned with electron beam lithography

    Science.gov (United States)

    Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

    2014-07-01

    Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error

  14. Quantitative Analysis of Micro-Structure in Meat Emulsions from Grating-Based Multimodal X-Ray Tomography

    DEFF Research Database (Denmark)

    Einarsdottir, Hildur; Nielsen, Mikkel Schou; Miklos, Rikke

    2013-01-01

    Using novel X-ray techniques, based on grating-interferometry, new imaging modalities can be obtained simultaneously with absorption computed tomography (CT). These modalities, called phase contrast and dark field imaging, measure the electron density and the diffusion length of the sample....... Enhanced contrast capabilities of this X-ray technique makes studies on materials with similar attenuation properties possible. In this paper the focus is set on processing grating-based X-ray tomograms of meat emulsions to quantitatively measure micro-structural changes due to heat treatment. The emulsion...... samples were imaged both in a raw and cooked state. Additionally, different fat types were used in the emulsions in order to compare micro-structural differences when either pork fat or sunflower oil was used. From the reconstructed tomograms the different ingredients in the emulsions were segmented using...

  15. Transmission Grating and Optics Technology Development for the Arcus Explorer Mission

    Science.gov (United States)

    Heilmann, Ralf; Arcus Team

    2018-01-01

    Arcus is a high-resolution x-ray spectroscopy MIDEX mission selected for a Phase A concept study. It is designed to explore structure formation through measurements of hot baryon distributions, feedback from black holes, and the formation and evolution of stars, disks, and exoplanet atmospheres. The design provides unprecedented sensitivity in the 1.2-5 nm wavelength band with effective area above 450 sqcm and spectral resolution R > 2500. The Arcus technology is based on 12 m-focal length silicon pore optics (SPO) developed for the European Athena mission, and critical-angle transmission (CAT) x-ray diffraction gratings and x-ray CCDs developed at MIT. The modular design consists of four parallel channels, each channel holding an optics petal, followed by a grating petal. CAT gratings are lightweight, alignment insensitive, high-efficiency x-ray transmission gratings that blaze into high diffraction orders, leading to high spectral resolution. Each optics petal represents an azimuthal sub-aperture of a full Wolter optic. The sub-aperturing effect increases spectral resolving power further. Two CCD readout strips receive photons from each channel, including higher-energy photons in 0th order. Each optics petal holds 34 SPO modules. Each grating petal holds 34 grating windows, and each window holds 4-6 grating facets. A grating facet consists of a silicon grating membrane, bonded to a flexure frame that interfaces with the grating window. We report on a sequence of tests with increasing complexity that systematically increase the Technology Readiness Level (TRL) for the combination of CAT gratings and SPOs towards TLR 6. CAT gratings have been evaluated in x rays for diffraction efficiency (> 30% at 2.5 nm) and for resolving power (R> 10,000). A CAT grating/SPO combination was measured at R ~ 3100 at blaze angles smaller than design values, exceeding Arcus requirements. Efficiency and resolving power were not impacted by vibration and thermal testing of gratings. A

  16. Optimal design of aperiodic, vertical silicon nanowire structures for photovoltaics.

    Science.gov (United States)

    Lin, Chenxi; Povinelli, Michelle L

    2011-09-12

    We design a partially aperiodic, vertically-aligned silicon nanowire array that maximizes photovoltaic absorption. The optimal structure is obtained using a random walk algorithm with transfer matrix method based electromagnetic forward solver. The optimal, aperiodic structure exhibits a 2.35 times enhancement in ultimate efficiency compared to its periodic counterpart. The spectral behavior mimics that of a periodic array with larger lattice constant. For our system, we find that randomly-selected, aperiodic structures invariably outperform the periodic array.

  17. Tunable Bandgap Opening in the Proposed Structure of Silicon Doped Graphene

    OpenAIRE

    Azadeh, Mohammad S. Sharif; Kokabi, Alireza; Hosseini, Mehdi; Fardmanesh, Mehdi

    2011-01-01

    A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation for different silicon sites in the host graphene, the effect of silicon concentration and unit cell geometry on the bandgap of the proposed structure is also investigated. Chemically silicon doped graphene results in an energy gap as large as 2eV according t...

  18. Structuring of silicon with low energy focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  19. Structure of hydrogenated amorphous silicon from ab initio molecular dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Buda, F. (Department of Physics, The Ohio State University, 174 West 18th Avenue, Columbus, Ohio (USA)); Chiarotti, G.L. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario Nazionale di Fisica della Materia, Padriciano 99, I-34012 Trieste (Italy)); Car, R. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Institut Romard de Recherche Numerique en Physique des Materiaux, CH-1015 Lausanne, Switzerland Department of Condensed Matter Physics, University of Geneva, CH-1211 Geneva (Switzerland)); Parrinello, M. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland))

    1991-09-15

    We have generated a model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data and provide new insight into the microscopic structure of this material. The calculation lends support to models in which monohydride complexes are prevalent, and indicates a strong tendency of hydrogen to form small clusters.

  20. Theory of structure and properties of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chiarotti, G.L.; Car, R. (International School of Advanced Studies, Trieste (Italy) Interuniversitario Nazionale di Fisica della Materia (INFM), Trieste (Italy). Lab. Tecnologie Avanzate Superfici e Catalisi); Buda, F. (International School of Advanced Studies, Trieste (Italy) Ohio State Univ., Columbus, OH (USA). Dept. of Physics); Parrinello, M. (International School of Advanced Studies, Trieste

    1990-01-01

    We have generated a computer model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data, and provide new insight into the microscopic structure of this material. This should lead to a better understanding of the hydrogenation process. 13 refs., 2 figs.

  1. Effects of radiation on MOS structures and silicon devices

    International Nuclear Information System (INIS)

    Braeunig, D.; Fahrner, W.

    1983-02-01

    A comprehensive view of radiation effects on MOS structures and silicon devices is given. In the introduction, the interaction of radiation with semiconductor material is presented. In the next section, the electrical degradation of semiconductor devices due to this interaction is discussed. The commonly used hardening techniques are shown. The last section deals with testing of radiation hardness of devices. (orig.) [de

  2. Fibre Bragg Grating Sensor Signal Post-processing Algorithm: Crack Growth Monitoring in Fibre Reinforced Plastic Structures

    DEFF Research Database (Denmark)

    Pereira, Gilmar Ferreira; Mikkelsen, Lars Pilgaard; McGugan, Malcolm

    2016-01-01

    A novel method to assess a crack growing/damage event in fibre reinforced plastic, using conventional single mode Fibre Bragg Grating sensors embedded in the host material is presented in this article. Three different damage mechanisms that can change the sensor output, longitudinal strain εxx......, transversal stress σyy;zz, and non-uniform strain εxx(xx), were identified. These damage mechanisms were identified during the experimental testing and linked with the sensor output using a digital image correlation technique. A dedicated algorithm to extract information from the reflected spectrum...... that enables crack detection was developed. Double Cantilever Beams specimens made with glass fibre and bonded with structural adhesive, were instrumented with a Fibre Bragg Grating array embedded in the host material, and tested using an experimental fracture procedure. This method was successfully validated...

  3. Multi-resonance peaks fiber Bragg gratings based on largely-chirped structure

    Science.gov (United States)

    Chen, Chao; Zhang, Xuan-Yu; Wei, Wei-Hua; Chen, Yong-Yi; Qin, Li; Ning, Yong-Qiang; Yu, Yong-Sen

    2018-04-01

    A composite fiber Bragg grating (FBG) with multi-resonance peaks (MRPs) has been realized by using femtosecond (fs) laser point-by-point inscription in single-mode fiber. This device contains a segment of largely-chirped gratings with the ultrahigh chirp coefficients and a segment of uniform high-order gratings. The observed MRPs are distributed in an ultra-broadband wavelength range from 1200 nm to 1700 nm in the form of quasi-period or multi-peak-group. For the 8th-order MRPs-FBG, we studied the axial strain and high-temperature sensing characteristics of different resonance peaks experimentally. Moreover, we have demonstrated a multi-wavelength fiber lasers with three-wavelength stable output by using a 9th-order MRPs-FBG as the wavelength selector. This work is significant for the fabrication and functionalization of FBGs with complicated spectra characteristics.

  4. Pulsed Laser Interactions with Silicon Nano structures in Emitter Formation

    International Nuclear Information System (INIS)

    Huat, V.L.C.; Leong, C.S.; Kamaruzzaman Sopian, Saleem Hussain Zaidi

    2015-01-01

    Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nano structures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nano structures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nano structure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high temperature POCl_3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage. (author)

  5. Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

    CERN Document Server

    Baraban, A P

    2002-01-01

    One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

  6. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  7. Fabrication of large area plasmonic nanoparticle grating structure on silver halide based transmission electron microscope film and its application as a surface enhanced Raman spectroscopy substrate

    International Nuclear Information System (INIS)

    Sudheer,; Tiwari, P.; Singh, M. N.; Sinha, A. K.; Rai, V. N.; Srivastava, A. K.; Bhartiya, S.; Mukherjee, C.

    2015-01-01

    The plasmonic responses of silver nanoparticle grating structures of different periods made on silver halide based electron microscope film are investigated. Raster scan of the conventional scanning electron microscope (SEM) is used to carry out electron beam lithography for fabricating the plasmonic nanoparticle grating (PNG) structures. Morphological characterization of the PNG structures, carried out by the SEM and the atomic force microscope, indicates that the depth of the groove decreases with a decrease in the grating period. Elemental characterization performed by the energy dispersive spectroscopy and the x-ray diffraction shows the presence of nanoparticles of silver in the PNG grating. The optical characterization of the gratings shows that the localized surface plasmon resonance peak shifts from 366 to 378 nm and broadens with a decrease in grating period from 10 to 2.5 μm. The surface enhanced Raman spectroscopy of the Rhodamine-6G dye coated PNG structure shows the maximum enhancement by two orders of magnitude in comparison to the randomly distributed silver nanoparticles having similar size and shape as the PNG structure

  8. Infrared spectroscopic ellipsometry of micrometer-sized SiO2 line gratings

    Science.gov (United States)

    Walder, Cordula; Zellmeier, Matthias; Rappich, Jörg; Ketelsen, Helge; Hinrichs, Karsten

    2017-09-01

    For the design and process control of periodic nano-structured surfaces spectroscopic ellipsometry is already established in the UV-VIS spectral regime. The objective of this work is to show the feasibility of spectroscopic ellipsometry in the infrared, exemplarily, on micrometer-sized SiO2 line gratings grown on silicon wafers. The grating period ranges from 10 to about 34 μm. The IR-ellipsometric spectra of the gratings exhibit complex changes with structure variations. Especially in the spectral range of the oxide stretching modes, the presence of a Rayleigh singularity can lead to pronounced changes of the spectrum with the sample geometry. The IR-ellipsometric spectra of the gratings are well reproducible by calculations with the RCWA method (Rigorous Coupled Wave Analysis). Therefore, infrared spectroscopic ellipsometry allows the quantitative characterization and process control of micrometer-sized structures.

  9. Optical fiber Bragg gratings. Part II. Modeling of finite-length gratings and grating arrays.

    Science.gov (United States)

    Passaro, Vittorio M N; Diana, Roberto; Armenise, Mario N

    2002-09-01

    A model of both uniform finite-length optical fiber Bragg gratings and grating arrays is presented. The model is based on the Floquet-Bloch formalism and allows rigorous investigation of all the physical aspects in either single- or multiple-periodic structures realized on the core of a monomodal fiber. Analytical expressions of reflectivity and transmittivity for both single gratings and grating arrays are derived. The influence of the grating length and the index modulation amplitude on the reflected and transmitted optical power for both sinusoidal and rectangular profiles is evaluated. Good agreement between our method and the well-known coupled-mode theory (CMT) approach has been observed for both single gratings and grating arrays only in the case of weak index perturbation. Significant discrepancies exist there in cases of strong index contrast because of the increasing approximation of the CMT approach. The effects of intragrating phase shift are also shown and discussed.

  10. Fragmentation and structure of silicon microclusters

    International Nuclear Information System (INIS)

    Feuston, B.P.; Kalia, R.K.; Vashishta, P.

    1987-01-01

    It may be possible to determine the magic numbers and fragmentation spectra from the ground-state binding energies and structure, but the relationship between the lowest-energy zero-temperature configurations and the energetics of finite-temperature microclusters is not obvious. Recall fragmentation of Si clusters occurs at temperatures the order of the melting temperature (T∼2000 K). What is needed, a first-principles finite-temperature calculation, allowing the determination of all possible structures, their corresponding binding energies, and fragmentation spectra, is not presently possible. However, a molecular dynamics calculation does allow one to study the nature of fragmentation in addition to determination of the global ground-state structure and all mechanically stable configurations underlying the finite-temperature cluster, once given an interaction potential. The authors present results for such a calculation for Si/sub 2-14/ using the Stillinger-Weber 3-body potential. Their results indicate that the existence of magic numbers is determined by the topology and energetics of high-energy bound structures rather than the structure and ground-state energies at zero temperature

  11. Miniature and low cost fiber Bragg grating interrogator for structural monitoring in nano-satellites

    Science.gov (United States)

    Toet, P. M.; Hagen, R. A. J.; Hakkesteegt, H. C.; Lugtenburg, J.; Maniscalco, M. P.

    2017-11-01

    In this paper we present a newly developed Fiber Optic measurement system, consisting of Fiber Bragg Grating (FBG) sensors and an FBG interrogator. The development of the measuring system is part of the PiezoElectric Assisted Smart Satellite Structure (PEASSS) project, which was initiated at the beginning of 2013 and is financed by the Seventh Framework Program (FP7) of the European Commission. Within the PEASSS project, a Nano-Satellite is being designed and manufactured to be equipped with new technology that will help keep Europe on the cutting edge of space research, potentially reducing the cost and development time for more accurate future sensor platforms including synthetic aperture optics, moving target detection and identification, and compact radars. After on ground testing the satellite is planned to be launched at the end of 2015. Within the satellite, different technologies will be demonstrated on orbit to show their capabilities for different in-space applications. For our application the FBG interrogator monitors the structural and thermal behaviour of a so called "smart panel". These panels will enable fine angle control and thermal and vibration compensation in order to improve all types of future Earth observations, such as environmental and planetary mapping, border and regional imaging. The Fiber Optic (FO) system in PEASSS includes four FBG strain sensors and two FBG temperature sensors. The 3 channel interrogator has to have a small footprint (110x50x40mm), is low cost, low in mass and has a low power consumption. In order to meet all these requirements, an interrogator has been designed based on a tunable Vertical-Cavity Surface-Emitting Laser (VCSEL) enabling a wavelength sweep of around 7 nm. To guarantee the absolute and relative performance, two reference methods are included internally in the interrogator. First, stabilized reference FBG sensors are used to obtain absolute wavelength calibrations. This method is used for the temperature

  12. DNA Structures on Silicon and Diamond

    NARCIS (Netherlands)

    Pop, Simona D.; Hinrichs, Karsten; Wenmackers, Sylvia; Cobet, Christoph; Esser, Norbert; Zahn, Dietrich R.T.; Hinrichs, Karsten; Eichhorn, Klaus-Jochen

    2014-01-01

    In the design of DNA-based hybrid devices, it is essential to have knowledge of the structural, electronic and optical properties of these biomolecular films. Spectroscopic ellipsometry is a powerful technique to probe and asses these properties. In this chapter, we review its application to

  13. Defect grating modes as superimposed grating states

    NARCIS (Netherlands)

    van Groesen, Embrecht W.C.; Sopaheluwakan, A.; Andonowati, A.; de Ridder, R.M; de Ridder, R.M.; Altena, G; Altena, G.; Geuzebroek, D.H.; Geuzenboek, D.; Dekker, R.; Dekker, R

    2003-01-01

    For a symmetric grating structure with a defect, we show that a fully transmitted defect mode in the band gap can be obtained as a superposition of two steady states: an amplified and an attenuated defect state. Without scanning the whole band gap by transmission calculations, this simplifies the

  14. Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

    Directory of Open Access Journals (Sweden)

    Kuen-Hsien Wu

    2015-09-01

    Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

  15. Simulations for irradiation of silicon-based structures

    International Nuclear Information System (INIS)

    Sagatova, A.; Pavlovic, M.; Sedlackova, K.; Necas, V.; Hybler, P.; Zatko, B.

    2013-01-01

    The software ModePEB for modelling of electron beam processing in multilayer flat objects was shown to be a very useful tool for optimization of the irradiation of silicon based structures. Except its significant help in setting-up the accelerator parameters corresponding to a desired dose, its proven reliability and consistency with the measured data makes the ModePEB an inevitable instrument for design and optimization of electron irradiation experiments. (authors)

  16. α-spectra hyperfine structure resolution by silicon planar detectors

    International Nuclear Information System (INIS)

    Eremin, V.K.; Verbitskaya, E.M.; Strokan, N.B.; Sukhanov, V.L.; Malyarenko, A.M.

    1986-01-01

    The lines with 13 keV step from the main one is α-spectra of nuclei with an odd number of nucleons take place. Silicon planar detectors n-Si with the operation surface of 10 mm 2 are developed for resolution of this hyperfine structure. The mechanism of losses in detectors for short-range-path particles is analyzed. The results of measurements from detectors with 10 keV resolution are presented

  17. cap alpha. -spectra hyperfine structure resolution by silicon planar detectors

    Energy Technology Data Exchange (ETDEWEB)

    Eremin, V K; Verbitskaya, E M; Strokan, N B; Sukhanov, V L; Malyarenko, A M

    1986-10-01

    The lines with 13 keV step from the main one is ..cap alpha..-spectra of nuclei with an odd number of nucleons take place. Silicon planar detectors n-Si with the operation surface of 10 mm/sup 2/ are developed for resolution of this hyperfine structure. The mechanism of losses in detectors for short-range-path particles is analyzed. The results of measurements from detectors with 10 keV resolution are presented.

  18. Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

    Science.gov (United States)

    Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

    2016-03-01

    Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

  19. Strain Measurement Using Embedded Fiber Bragg Grating Sensors Inside an Anchored Carbon Fiber Polymer Reinforcement Prestressing Rod for Structural Monitoring

    OpenAIRE

    Kerrouche, Abdelfateh; Boyle, William J.O.; Sun, Tong; Grattan, Kenneth T. V.; Schmidt, Jacob Wittrup; Täljsten, Björn

    2009-01-01

    Results are reported from a study carried out using a series of Bragg grating-based optical fiber sensors written into a very short length (60 mm) optical fiber network and integrated into carbon fiber polymer reinforcement (CFPR) rod. Such rods are used as reinforcements in concrete structures and in tests were subjected to strain through a series of cycles of pulling tests, with applied forces of up to 30 kN. The results show that effective strain measurements can be obtained from the diffe...

  20. Femtosecond laser induced crystallization and permanent relief grating structures in amorphous inorganic (In2O3+1 wt % TiO2) films

    International Nuclear Information System (INIS)

    Katayama, Shigeru; Tsutsumi, Naoto; Nakamura, Toshitaka; Horiike, Mika; Hirao, Kazuyuki

    2002-01-01

    This letter presents an investigation of crystalline relief grating structures induced by irradiation of near-infrared femtosecond laser pulses on an amorphous inorganic (In 2 O 3 +1 wt % TiO 2 ) film. The shapes of crystallized relief structures were sensitive to the scanning rate and the focused point height of irradiation, and the optimized irradiation condition gave cone-shaped cross section structures. Selective wet etching on unirradiated amorphous regions using a 3% hydrochloric acid solution could make sharper relief grating structures of crystalline regions. Diffraction efficiency of the relief grating structures with Au coating was measured, and it was confirmed that first-order diffraction, efficiencies were approximately 40% and 20% for etched and nonetched samples, respectively

  1. The atomic and electronic structure of amorphous silicon nitride

    International Nuclear Information System (INIS)

    Alvarez, F.; Valladares, A.A.

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  2. Slit and phase grating diffraction with a double crystal diffractometer

    International Nuclear Information System (INIS)

    Treimer, Wolfgang; Hilger, Andre; Strobl, Markus

    2006-01-01

    The lateral coherence properties of a neutron beam (λ=0.5248nm) in a double crystal diffractometer (DCD) were studied by means of single slit diffraction and by diffraction by different perfect Silicon phase gratings. Perfect agreements were found for the lateral coherence length measured with the slit and for the one determined by Silicon phase gratings, however, some peculiarities are still present

  3. Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

    Directory of Open Access Journals (Sweden)

    Vladimir A. Terekhov

    2015-09-01

    Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

  4. Point-by-point written fiber-Bragg gratings and their application in complex grating designs.

    Science.gov (United States)

    Marshall, Graham D; Williams, Robert J; Jovanovic, Nemanja; Steel, M J; Withford, Michael J

    2010-09-13

    The point-by-point technique of fabricating fibre-Bragg gratings using an ultrafast laser enables complete control of the position of each index modification that comprises the grating. By tailoring the local phase, amplitude and spacing of the grating's refractive index modulations it is possible to create gratings with complex transmission and reflection spectra. We report a series of grating structures that were realized by exploiting these flexibilities. Such structures include gratings with controlled bandwidth, and amplitude- and phase-modulated sampled (or superstructured) gratings. A model based on coupled-mode theory provides important insights into the manufacture of such gratings. Our approach offers a quick and easy method of producing complex, non-uniform grating structures in both fibres and other mono-mode waveguiding structures.

  5. Enhanced refractive index sensor using a combination of a long period fiber grating and a small core singlemode fiber structure

    International Nuclear Information System (INIS)

    Wu, Qiang; Ma, Youqiao; Yang, Minwei; Semenova, Yuliya; Wang, Pengfei; Farrell, Gerald; Chan, Hai Ping; Yuan, Jinhui; Yan, Binbin; Yu, Chongxiu

    2013-01-01

    An enhanced refractive index (RI) sensor based on a combination of a long period fiber grating (LPG) and a small core singlemode fiber (SCSMF) structure is proposed and developed. Since the LPG and SCSMF transmission spectra experience a blue and a red shift respectively as the surrounding RI (SRI) increases, the sensitivity is improved by measuring the separation between the resonant wavelengths of the LPG and SCSMF structures. Experimental results show that the sensor has a sensitivity of 1028 nm/SRI unit in the SRI range from 1.422 to 1.429, which is higher than individual sensitivities of either structure alone used in the experiment. Experimental results agree well with simulation results. (paper)

  6. Crack Detection in Fibre Reinforced Plastic Structures Using Embedded Fibre Bragg Grating Sensors: Theory, Model Development and Experimental Validation

    DEFF Research Database (Denmark)

    Pereira, Gilmar Ferreira; Mikkelsen, Lars Pilgaard; McGugan, Malcolm

    2015-01-01

    properties. When applying this concept to different structures, sensor systems and damage types, a combination of damage mechanics, monitoring technology, and modelling is required. The primary objective of this article is to demonstrate such a combination. This article is divided in three main topics......: the damage mechanism (delamination of FRP), the structural health monitoring technology (fibre Bragg gratings to detect delamination), and the finite element method model of the structure that incorporates these concepts into a final and integrated damage-monitoring concept. A novel method for assessing...... by the end-user. Conjointly, a novel model for sensor output prediction (virtual sensor) was developed using this FBG sensor crack monitoring concept and implemented in a finite element method code. The monitoring method was demonstrated and validated using glass fibre double cantilever beam specimens...

  7. Layered structure in core–shell silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Van Tuan, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Anh Tuan, Chu; Thanh Thuy, Tran; Binh Nam, Vu [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Toan Thang, Pham [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam); Hong Duong, Pham, E-mail: duongphamhong@yahoo.com [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet Street, Hanoi 10000 (Viet Nam); Thanh Huy, Pham, E-mail: huy.phamthanh@hust.edu.vn [Advanced Institute for Science and Technology (AIST) and International Training Institute for Materials Science Hanoi University of Science and Technology, 01 Dai Co Viet Street,Hanoi 10000,Vietnam (Viet Nam)

    2014-10-15

    Silicon nanowires (NWs) with core–shell structures were prepared using the Vapor–Liquid–Solid (VLS) method. The wires have lengths of several hundreds of nanometers and diameters in the range of 30–50 nm. Generally, these wires are too large to exhibit the quantum confinement effect of excitons in Si nanocrystals. However, the photoluminescence (PL) and Raman spectra are similar to those of nanocrystalline silicon embedded in a SiO{sub 2} matrix, in which the recombination of quantum-confined excitons plays an important role. This effect occurs only when the average size of the silicon nanocrystals is smaller than 5 nm. To understand this discrepancy, TEM images of nanowires were obtained and analyzed. The results revealed that the cores of wires have a layered Si/SiO{sub 2} structure, in which the thickness of each layer is much smaller than its diameter. The temperature dependence of the PL intensity was recorded from 11 to 300 K; the result is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels. - Highlights: • The cores of the Si NWs have a layered Si/SiO{sub 2} structure. • The Si NWs were formed due to the phase separation of Si and SiO{sub 2} and the partial oxidization by residual oxygen. • Two processes, the reaction of Si and oxygen atoms and the combination between Si atoms, occur simultaneously. • The formation of the layered structures is associated with the self-limiting oxidation phenomenon in Si nanostructures.

  8. Temperature dependency of silicon structures for magnetic field gradient sensing

    Science.gov (United States)

    Dabsch, Alexander; Rosenberg, Christoph; Stifter, Michael; Keplinger, Franz

    2018-02-01

    This work describes the temperature dependence of two sensors for magnetic field gradient sensors and demonstrates a structure to compensate for the drift of resonance frequency over a wide temperature range. The temperature effect of the sensing element is based on internal stresses induced by the thermal expansion of material, therefore FEM is used to determine the change of the eigenvalues of the sensing structure. The experimental setup utilizes a Helmholtz coil system to generate the magnetic field and to excite the MEMS structure with Lorentz forces. The MEMS structure is placed on a plate heated with resistors and cooled by a Peltier element to control the plate temperature. In the second part, we describe how one can exploit temperature sensitivity for temperature measurements and we show the opportunity to include the temperature effect to increase the sensitivity of single-crystal silicon made flux density gradient sensors.

  9. Development of a Cloud Computing-Based Pier Type Port Structure Stability Evaluation Platform Using Fiber Bragg Grating Sensors.

    Science.gov (United States)

    Jo, Byung Wan; Jo, Jun Ho; Khan, Rana Muhammad Asad; Kim, Jung Hoon; Lee, Yun Sung

    2018-05-23

    Structure Health Monitoring is a topic of great interest in port structures due to the ageing of structures and the limitations of evaluating structures. This paper presents a cloud computing-based stability evaluation platform for a pier type port structure using Fiber Bragg Grating (FBG) sensors in a system consisting of a FBG strain sensor, FBG displacement gauge, FBG angle meter, gateway, and cloud computing-based web server. The sensors were installed on core components of the structure and measurements were taken to evaluate the structures. The measurement values were transmitted to the web server via the gateway to analyze and visualize them. All data were analyzed and visualized in the web server to evaluate the structure based on the safety evaluation index (SEI). The stability evaluation platform for pier type port structures involves the efficient monitoring of the structures which can be carried out easily anytime and anywhere by converging new technologies such as cloud computing and FBG sensors. In addition, the platform has been successfully implemented at “Maryang Harbor” situated in Maryang-Meyon of Korea to test its durability.

  10. Structural defects in laser- and electron-beam annealed silicon

    International Nuclear Information System (INIS)

    Narayan, J.

    1979-01-01

    Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

  11. Metallurgical structures in a high uranium-silicon alloy

    International Nuclear Information System (INIS)

    Wyatt, B.S.; Berthiaume, L.C.; Conversi, J.L.

    1968-10-01

    The effects of fabrication and heat treatment variables on the structure of a uranium -- 3.96 wt% silicon alloy have been studied using optical microscopy, quantitative metallography and hardness determinations. It has been shown that an optimum temperature exists below the peritectoid temperature where the maximum amount of transformation to U 3 Si occurs in a given period of time. The time required to fully transform an as-cast alloy at this optimum temperature is affected by the size of the primary U 3 Si 2 dendrites. With a U 3 Si 2 particle size of <12 μm complete transformation can be achieved in four hours. (author)

  12. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  13. Electronic structure of deep impurity centers in silicon

    International Nuclear Information System (INIS)

    Oosten, A.B. van.

    1989-01-01

    This thesis reports an experimental study of deep level impurity centers in silicon, with much attention for theoretical interpretation of the data. A detailed picture of the electronic structure of several centers was obtained by magnetic resonance techniques, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and field scanned ENDOR (FSE). The thesis consists of two parts. The first part deals with chalcogen (sulfur, selenium and tellurium) related impurities, which are mostly double donors. The second part is about late transition metal (nickel, palladium and platinum) impurities, which are single (Pd,Pt) or double (Ni) acceptor centers. (author). 155 refs.; 51 figs.; 23 tabs

  14. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

    Directory of Open Access Journals (Sweden)

    D. Simin

    2016-07-01

    Full Text Available We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-^{28}SiC and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/sqrt[Hz] within a volume of 3×10^{-7}mm^{3} at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm^{3}, the projection noise limit is below 100  fT/sqrt[Hz].

  15. Gallium nitride heterostructures on 3D structured silicon.

    Science.gov (United States)

    Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  16. Gallium nitride heterostructures on 3D structured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Soekmen, Uensal; Peiner, Erwin; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], E-mail: s.fuendling@tu-bs.de

    2008-10-08

    We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

  17. Structures of sub-monolayered silicon carbide films

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

  18. Summary of structural refinement in hi-silicon aluminium piston alloy with phosphorous as grain refiner

    International Nuclear Information System (INIS)

    Malik, F.A.; Sheikh, S.T.; Choudhry, A.A.

    2003-01-01

    Aluminium Silicon Alloys are extensively used in a wide variety of applications. There are numerous variables in composition, production control, final structure which can influence the mechanical properties of Hi - Silicon Piston alloys. Hypereutectic AlSi alloys develop coarse grain primary silicon crystals, which have a strong negative effect on the tensile strength, the ductility, and the hardness. These crystals slow machining and reduce the tool life considerably. Phosphorous addition produce a fine, evenly spread crystal structure, lamellar structure of the silicon changes into a granular structure. (author)

  19. Method for Impeding Degradation of Porous Silicon Structures

    Science.gov (United States)

    Vilentchouk, Biana Godin; Ferrari, Mauro

    2011-01-01

    This invention relates to surface modification of porosified silicon (pSi) structures with poly(alkylene) glycols for the purpose of controlled degradation of the silicon matrix and tailored release of encapsulated substances for biomedical applications. The pSi structures are currently used in diverse biomedical applications including bio-molecular screening, optical bio-sensoring, and drug delivery by means of injectable/orally administered carriers and implantable devices. The size of the pores and the surface chemistry of the pSi structure can be controlled during the microfabrication process and thereafter. A fine regulation of the degradation kinetics of mesoporous silicon structures is of fundamental importance. Polyethylene glycols (PEGs) represent the major category of surface modifying agents used in classical drug delivery systems and in pharmaceutical dosage forms. PEGylation enables avoidance of RES uptake, thus prolonging circulation time of intravenously injectable nanovectors. PEG molecules demonstrate little toxicity and immunogenicity, and are cleared from the body through the urine (molecular weight, MW less than 30 kDa) or in the feces (MW greater than 30kDa). The invention focuses on the possibility of finely tuning the degradation kinetics of the pSi nanovectors and other structures through surface conjugation of PEGs with various backbone lengths/MWs. To prove the concept, pSi nanovectors were covalently conjugated to seven PEGs with MW from 245 to 5,000 Da and their degradation kinetics in physiologically relevant media (phosphate buffer saline, PBS pH7.4, and fetal bovine serum) was assessed by the elemental analysis of the Si using inductive coupled plasma atomic emission spectroscopy (ICP-AES). The conjugation of the PEG with lowest MW to the nanovectors surface did not induce any change in the degradation kinetics in serum, but inhibited degradation and consequently the release of orthosilicic acid into buffer. When PEGs with the longer

  20. Nanofilm-coated long-period fiber grating humidity sensors for corrosion detection in structural health monitoring

    Science.gov (United States)

    Zheng, Shijie; Zhu, Yinian; Krishnaswamy, Sridhar

    2011-04-01

    Long-period gratings (LPGs) have shown their significant promising applications in sensors owing to the attractive features that they posses such as small size, immunity for electromagnetic interference, geometric versatility, multiplexing capability, and resistance to corrosive and hazardous environments. Recent researches have revealed that LPGs written on the standard optical fibers could be used as a powerful sensing platform for structural health monitoring. In this work, we inscribe LPGs into SMF-28 optical fiber by focused-beam CO2 laser, demonstrating as a refractive index sensor for nondestructive chemical detections in the civil infrastructures. Although evanescent-field based LPG sensors have been applied in quantitatively monitoring chemical analytes including moisture, chloride, and corrosion by-product, etc., the sensitivity, selectivity, and response time as well as thermo-stability of such sensors are still the issues for some special purposes. In order to improve those characteristics of the sensors, we propose two types of nano-film to be coated in grating region by electrostatic self-assembly (ESA) deposition processing. The primary coating does not affect on LPG transmission parameters such as resonance wavelength and its intensity that can be used for sensing, but it increases the sensitivity to refractive index change of surrounding material. The secondary coating is for selectively absorption of analyte molecule of interest. Response time of the nanofilm-coated LPG sensor is dependent on the analyte absorption and de-absorption rates as well as the thicknesses of the coating materials, which is also investigated. Multi-channel sensor system is being designed to monitor different analytes simultaneously, which is continuing to further explore the monitoring of structural health conditions through in situ measurements of corrosion in the concrete structures.

  1. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  2. Nano structures of amorphous silicon: localization and energy gap

    Directory of Open Access Journals (Sweden)

    Z Nourbakhsh

    2013-10-01

    Full Text Available Renewable energy research has created a push for new materials; one of the most attractive material in this field is quantum confined hybrid silicon nano-structures (nc-Si:H embedded in hydrogenated amorphous silicon (a-Si:H. The essential step for this investigation is studying a-Si and its ability to produce quantum confinement (QC in nc-Si: H. Increasing the gap of a-Si system causes solar cell efficiency to increase. By computational calculations based on Density Functional Theory (DFT, we calculated a special localization factor, [G Allan et al., Phys. Rev. B 57 (1997 6933.], for the states close to HOMO and LUMO in a-Si, and found most weak-bond Si atoms. By removing these silicon atoms and passivating the system with hydrogen, we were able to increase the gap in the a-Si system. As more than 8% hydrogenate was not experimentally available, we removed about 2% of the most localized Si atoms in the almost tetrahedral a-Si system. After removing localized Si atoms in the system with 1000 Si atoms, and adding 8% H, the gap increased about 0.24 eV. Variation of the gap as a function of hydrogen percentage was in good agreement with the Tight –Binding results, but about 2 times more than its experimental value. This might come from the fact that in the experimental conditions, it does not have the chance to remove the most localized states. However, by improving the experimental conditions and technology, this value can be improved.

  3. Luminescence and structural study of porous silicon films

    Science.gov (United States)

    Xie, Y. H.; Wilson, W. L.; Ross, F. M.; Mucha, J. A.; Fitzgerald, E. A.; Macaulay, J. M.; Harris, T. D.

    1992-03-01

    A combination of photoluminescence, TEM, and Fourier transform IR spectroscopy is used to investigate the luminescence properties of 3-micron thick, strongly emitting, and highly porous silicon films. TEMs indicate that these samples have structures of predominantly 6-7-nm size clusters. In the as-prepared films, there is a significant concentration of Si-H bonds which is gradually replaced by Si-O bonds during prolonged aging in air. Upon optical excitation these films exhibit strong visible emission, peaking at about 690 nm. The excitation edge is shown to be emission-wavelength dependent, revealing the inhomogeneous nature of both the initially photoexcited and luminescing species. The correlation of the spectral and structural information suggest that the source of the large blue shift of the visible emission compared to the bulk Si bandgap energy is due to quantum confinement in the nanometer-size Si clusters.

  4. Nuclear Power Plant Prestressed Concrete Containment Vessel Structure Monitoring during Integrated Leakage Rate Testing Using Fiber Bragg Grating Sensors

    Directory of Open Access Journals (Sweden)

    Jinke Li

    2017-04-01

    Full Text Available As the last barrier of nuclear reactor, prestressed concrete containment vessels (PCCVs play an important role in nuclear power plants (NPPs. To test the mechanical property of PCCV during the integrated leakage rate testing (ILRT, a fiber Bragg grating (FBG sensor was used to monitor concrete strain. In addition, a finite element method (FEM model was built to simulate the progress of the ILRT. The results showed that the strain monitored by FBG had the same trend compared to the inner pressure variation. The calculation results showed a similar trend compared with the monitoring results and provided much information about the locations in which the strain sensors should be installed. Therefore, it is confirmed that FBG sensors and FEM simulation are very useful in PCCV structure monitoring.

  5. WDM-Coherent OCDMA over one single device based on short chip Super Structured Fiber Bragg Gratings.

    Science.gov (United States)

    Amaya, Waldimar; Pastor, Daniel; Baños, Rocio; Garcia-Munoz, Victor

    2011-11-21

    We theoretically propose and demonstrate experimentally a Coherent Direct Sequence OCDMA en/decoder for multi-channel WDM operation based on a single device. It presents a broadband spectral envelope and a periodic spectral pattern that can be employed for en/decoding multiple sub-bands simultaneously. Multi-channel operation is verified experimentally by means of Multi-Band Super Structured Fiber Bragg Gratings with binary phase encoded chips fabricated with 1mm inter-chip separation that provides 4x100 GHz ITU sub-band separation at 1.25 Gbps. The WDM-OCDMA system verification was carried out employing simultaneous encoding of four adjacent sub-bands and two different OCDMA codes. © 2011 Optical Society of America

  6. Complementary Walsh-Hadamard coded optical CDMA coder/decoders structured over arrayed-waveguide grating routers

    Science.gov (United States)

    Huang, Jen-Fa; Yang, Chao-Chin; Tseng, Shin-Pin

    2004-01-01

    In this paper, an optical code-division multiple-access (OCDMA) system with complementary Walsh-Hadamard coded optical encoder/decoder configuration structured over arrayed-waveguide grating (AWG) routers is examined. In the proposed system, each network user requires only two AWG routers to accomplish spectral encoding and decoding for complementary keying, thus, resulting a simpler and low cost system. Performance of the proposed system is analyzed by taking the effect of phase-induced intensity noise into account. The result indicates that the established system not only preserves the capability of suppressing multiple-access interference (MAI), but also improves bit-error-rate performance as compared to the conventional coders employing simple on-off keying.

  7. Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

  8. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  9. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  10. Space grating optical structure of the retina and RGB-color vision.

    Science.gov (United States)

    Lauinger, Norbert

    2017-02-01

    Diffraction of light at the spatial cellular phase grating outer nuclear layer of the retina could produce Fresnel near-field interferences in three RGB diffraction orders accessible to photoreceptors (cones/rods). At perpendicular light incidence the wavelengths of the RGB diffraction orders in photopic vision-a fundamental R-wave with two G+B-harmonics-correspond to the peak wavelengths of the spectral brightness sensitivity curves of the cones at 559 nmR, 537 nmG, and 447 nmB. In scotopic vision the R+G diffraction orders optically fuse at 512 nm, the peak value of the rod's spectral brightness sensitivity curve. The diffractive-optical transmission system with sender (resonator), space waves, and receiver antennae converts the spectral light components involved in imaging into RGB space. The colors seen at objects are diffractive-optical products in the eye, as the German philosopher A. Schopenhauer predicted. They are second related to the overall illumination in object space. The RGB transmission system is the missing link optically managing the spectral tuning of the RGB photopigments.

  11. Structural analysis and testing of a carbon-composite wing using fiber Bragg gratings

    Science.gov (United States)

    Nicolas, Matthew James

    The objective of this study was to determine the deflected wing shape and the out-of-plane loads of a large-scale carbon-composite wing of an ultralight aerial vehicle using Fiber Bragg Grating (FBG) technology. The composite wing was instrumented with an optical fiber on its top and bottom surfaces positioned over the main spar, resulting in approximately 780 strain sensors bonded to the wings. The strain data from the FBGs was compared to that obtained from four conventional strain gages, and was used to obtain the out-of-plane loads as well as the wing shape at various load levels using NASA-developed real-time load and displacement algorithms. The composite wing measured 5.5 meters and was fabricated from laminated carbon uniaxial and biaxial prepreg fabric with varying laminate ply patterns and wall thickness dimensions. A three-tier whiffletree system was used to load the wing in a manner consistent with an in-flight loading condition.

  12. Encapsulation process for diffraction gratings.

    Science.gov (United States)

    Ratzsch, Stephan; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana

    2015-07-13

    Encapsulation of grating structures facilitates an improvement of the optical functionality and/or adds mechanical stability to the fragile structure. Here, we introduce novel encapsulation process of nanoscale patterns based on atomic layer deposition and micro structuring. The overall size of the encapsulated structured surface area is only restricted by the size of the available microstructuring and coating devices; thus, overcoming inherent limitations of existing bonding processes concerning cleanliness, roughness, and curvature of the components. Finally, the process is demonstrated for a transmission grating. The encapsulated grating has 97.5% transmission efficiency in the -1st diffraction order for TM-polarized light, and is being limited by the experimental grating parameters as confirmed by rigorous coupled wave analysis.

  13. Optical nonreciprocal transmission in an asymmetric silicon photonic crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zheng; Chen, Juguang; Ji, Mengxi; Huang, Qingzhong; Xia, Jinsong; Wang, Yi, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wu, Ying, E-mail: yingwu2@126.com, E-mail: ywangwnlo@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-11-30

    An optical nonreciprocal transmission (ONT) is realized by employing the nonlinear effects in a compact asymmetric direct-coupled nanocavity-waveguide silicon photonic crystal structure with a high loaded quality factor (Q{sub L}) of 42 360 and large extinction ratio exceeding 30 dB. Applying a single step lithography and successive etching, the device can realize the ONT in an individual nanocavity, alleviating the requirement to accurately control the resonance of the cavities. A maximum nonreciprocal transmission ratio of 21.1 dB as well as a working bandwidth of 280 pm in the telecommunication band are obtained at a low input power of 76.7 μW. The calculated results by employing a nonlinear coupled-mode model are in good agreement with the experiment.

  14. Optical modulation in silicon-vanadium dioxide photonic structures

    Science.gov (United States)

    Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

    2017-08-01

    All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

  15. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

    2017-03-15

    Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

  16. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  17. A new capacitive long-range displacement nanometer sensor with differential sensing structure based on time-grating

    Science.gov (United States)

    Yu, Zhicheng; Peng, Kai; Liu, Xiaokang; Pu, Hongji; Chen, Ziran

    2018-05-01

    High-precision displacement sensors, which can measure large displacements with nanometer resolution, are key components in many ultra-precision fabrication machines. In this paper, a new capacitive nanometer displacement sensor with differential sensing structure is proposed for long-range linear displacement measurements based on an approach denoted time grating. Analytical models established using electric field coupling theory and an area integral method indicate that common-mode interference will result in a first-harmonic error in the measurement results. To reduce the common-mode interference, the proposed sensor design employs a differential sensing structure, which adopts a second group of induction electrodes spatially separated from the first group of induction electrodes by a half-pitch length. Experimental results based on a prototype sensor demonstrate that the measurement accuracy and the stability of the sensor are substantially improved after adopting the differential sensing structure. Finally, a prototype sensor achieves a measurement accuracy of  ±200 nm over the full 200 mm measurement range of the sensor.

  18. A study of AFM-based scratch process on polycarbonate surface and grating application

    International Nuclear Information System (INIS)

    Choi, Chul Hyun; Lee, Dong Jin; Sung, Jun-Ho; Lee, Min Woo; Lee, Seung-Gol; Park, Se-Geun; Lee, El-Hang; O, Beom-Hoan

    2010-01-01

    We report on the possibility of applying atomic force microscope (AFM) lithography to draw micro/nano-structures on the surface of a polycarbonate (PC) substrate. We also fabricated a grating structure on the PC surface using the scratch method. An AFM silicon tip coated with a diamond layer was utilized as a cutting tool to scratch the surface of the sample. In order to obtain pattern depth deeper than the control method of interaction force, we used a scanner movement method which the sample scanner moves along the Z-axis. A grating of 100 μm x 150 μm was fabricated by the step and repeat method wherein the sample stage is moved in the direction of the XY-axis. The period and the depth of the grating are 500 and 50 nm, respectively. Light of 632.8 nm wavelength was diffracted on the surface of the PC substrate.

  19. About the optical properties of oxidized black silicon structures

    Science.gov (United States)

    Pincik, E.; Brunner, R.; Kobayashi, H.; Mikula, M.; Kučera, M.; Švec, P.; Greguš, J.; Vojtek, P.; Zábudlá, Z.; Imamura, K.; Zahoran, M.

    2017-02-01

    The paper deals with the optical and morphological properties of thermally oxidized black silicon (OBSi) nano-crystalline specimens produced by the surface structure chemical transfer method (SSCT). This method can produce a nano-crystalline Si black color layer on c-Si with a range of thickness of ∼50 nm to ∼300 nm by the contact of c-Si immersed in chemical solutions HF + H2O2 with a catalytic mesh. We present and discuss mainly the photoluminescence properties of both polished c-Si and OBSi structures, respectively. The similar photoluminescence (PL) behaviors recorded at liquid helium (6 K) and room temperatures on both polished crystalline Si and OBSi samples, respectively, indicate the similar origin of recorded luminescence light. As the positions of PL maxima of OBSi structures are mainly related to the size of Si nanocrystallites and SiO(x), we therefore suppose that the size of the dominant parts of the luminated OBSi nanostructure is pre-determined by the used polishing Si procedure, and/or the distribution function of the number of formed crystallites on their size is very similar. The blue shift of both PL spectra reaching almost value of 0.40 eV observed after the decrease of the sample temperature to 6 K we relate also with the change of the semiconductor band gap width.

  20. Laser formation of Bragg gratings in polymer nanocomposite materials

    Energy Technology Data Exchange (ETDEWEB)

    Nazarov, M M; Khaydukov, K V; Sokolov, V I; Khaydukov, E V [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

    2016-01-31

    The method investigated in this work is based on the laser-induced, spatially inhomogeneous polymerisation of nanocomposite materials and allows control over the motion and structuring of nanoparticles. The mechanisms of nanoparticle concentration redistribution in the process of radical photopolymerisation are studied. It is shown that under the condition of spatially inhomogeneous illumination of a nanocomposite material, nanoparticles are diffused from the illuminated areas into the dark fields. Diffraction gratings with a thickness of 8 μm and a refractive index modulation of 1 × 10{sup -2} are written in an OCM-2 monomer impregnated by silicon nanoparticles. The gratings may be used in the development of narrowband filters, in holographic information recording and as dispersion elements in integrated optical devices. (interaction of laser radiation with matter. laser plasma)

  1. Fiber Optic Bragg Gratings

    National Research Council Canada - National Science Library

    Battiato, James

    1998-01-01

    Coupled mode theory was used to model reflection fiber gratings. The effects of experimental parameters on grating characteristics were modeled for both uniform and non-uniform grating profiles using this approach...

  2. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  3. Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

    Directory of Open Access Journals (Sweden)

    Mohan Muthusamy

    2018-04-01

    Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

  4. Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang; Song, Hai-Ying; Liu, H.Y.; Liu, Shi-Bing, E-mail: sbliu@bjut.edu.cn

    2017-07-12

    Highlights: • Proposed a valid mechanism of high harmonic generation by laser grating target interaction: oscillation of equivalent electric dipole (OEED). • Found that there also exist harmonic emission at large emission angle but not just near-surface direction as the former researches had pointed out. • Show the process of the formation and motion of electron bunches at the grating-target surface irradiating with femtosecond laser pulse. - Abstract: We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

  5. Implantation of oxygen ions for the realization of SOS (silicon on insulator) structures: SIMOX

    International Nuclear Information System (INIS)

    Margail, J.

    1987-03-01

    Highdose oxygen implantation is becoming a serious candidate for SOI (silicon on insulator) structure realization. The fabrication condition study of these substrates allowed to show up the implantation and annealing parameter importance for microstructure, and particularly for crystal quality of silicon films. It has been shown that the use of high temperature annealings leads to high quality substrates: monocrystal silicon film without any precipitate, at the card scale; Si/Si O 2 interface formation. After annealing at 1340 O C, Hall mobilities have been measured in silicon film, and its residual doping is very low. First characteristics and performance of submicron CMOS circuits prooves the electric quality of these substrates [fr

  6. Photoconductivity relaxation and electron transport in macroporous silicon structures

    Directory of Open Access Journals (Sweden)

    L.A. Karachevtseva

    2017-12-01

    Full Text Available Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.

  7. Strong quantum-confined stark effect in germanium quantum-well structures on silicon

    International Nuclear Information System (INIS)

    Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

    2006-01-01

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

  8. Study of position resolution and electron-hadron separation of electromagnetic calorimeter with a silicon structure

    International Nuclear Information System (INIS)

    Gorodnichev, V.B.; Kachanov, V.A.; Khodyrev, V.Yu.; Kurchaninov, L.L.; Rykali, V.V.; Solovianov, V.L.; Ukhalov, M.N.

    1993-01-01

    The maximum shower silicon strip detectors embedded in a module of sandwich-type electromagnetic calorimeter have been tested. The position resolution at different depths of the silicon structure has been measured. The results on electron-hadron separation obtained as a byproduct in this study are presented, and possibility of their improvement is discussed. 8 refs., 10 figs., 1 tab

  9. MEMS Bragg grating force sensor

    DEFF Research Database (Denmark)

    Reck, Kasper; Thomsen, Erik Vilain; Hansen, Ole

    2011-01-01

    We present modeling, design, fabrication and characterization of a new type of all-optical frequency modulated MEMS force sensor based on a mechanically amplified double clamped waveguide beam structure with integrated Bragg grating. The sensor is ideally suited for force measurements in harsh...... environments and for remote and distributed sensing and has a measured sensitivity of -14 nm/N, which is several times higher than what is obtained in conventional fiber Bragg grating force sensors. © 2011 Optical Society of America....

  10. Reliability, Durability and Packaging of Fibre Bragg Gratings for Large-Scale Structural Health Monitoring of Defence Platforms

    Science.gov (United States)

    2013-08-01

    thermoset system designed to achieve good wetting , high-strength and low-creep adhesion. Many commercially-available adhesives were sourced and...Bragg grating: 1. Removal of the fibre coating. 2. Photosensitization of the fibre. 3. Exposure of the grating to UV laser light. 4. Annealing and...molecular hydrogen loading (H2 loading) in a heated pressure vessel . Photosensitisation results in a stronger refractive index contrast for a given

  11. Structural Health Monitoring with Fiber Bragg Grating and Piezo Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — IFOS and its research institute collaborator, Washington State University (WSU), have demonstrated feasibility of a structural health monitoring (SHM) system for...

  12. Type I Clathrates as Novel Silicon Anodes: An Electrochemical and Structural Investigation

    OpenAIRE

    Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; Davidowski, Stephen K.; Baggetto, Lo?c; Zhao, Ran; Cheng, Qian; Yarger, Jeffery L.; Veith, Gabriel M.; Ellis?Terrell, Carol; Miller, Michael A.; Chan, Kwai S.; Chan, Candace K.

    2015-01-01

    Silicon clathrates contain cage?like structures that can encapsulate various guest atoms or molecules. An electrochemical evaluation of type I silicon clathrates based on Ba8Al y Si46?y as the anode material for lithium?ion batteries is presented here. Postcycling characterization with nuclear magnetic resonance and X?ray diffraction shows no discernible structural or volume changes even after electrochemical insertion of 44 Li (?1 Li/Si) into the clathrate structure. The observed properties ...

  13. Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure

    International Nuclear Information System (INIS)

    Lugscheider, E.; Deppe, E.; Ambroziak, A.; Melzer, A.

    1991-01-01

    Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.) [de

  14. Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

    International Nuclear Information System (INIS)

    Dávila, M E; Montero, I; Marele, A; Gómez-Rodríguez, J M; De Padova, P; Hennies, F; Pietzsch, A; Shariati, M N; Le Lay, G

    2012-01-01

    We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5 × 2/5 × 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5 × 2/5 × 4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected. (paper)

  15. Radiation effects in the infrared absorption and the silicon structure

    International Nuclear Information System (INIS)

    Groza, A.A.; Litovchenko, P.G.; Starchik, M.Yi.

    2006-01-01

    The results of the long-term studies of the silicon irradiated by the high-energy particles are systemised. Using of the electrons, protons, reactor neutrons for irradiation and the wide range of the fluence irradiation have given the possibility to the authors to obtain the information on the character of the formed damages in the lattice of the silicon, to compare the effectiveness of the different damage input depending on the irradiation type, to obtain the information on the radiation damage reconstruction, their impact to the oxygen impurity behaviour, which influences substantially as the silicon properties, as the devices characteristics to be developed on its base

  16. Surface and Core Electronic Structure of Oxidized Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Noor A. Nama

    2010-01-01

    Full Text Available Ab initio restricted Hartree-Fock method within the framework of large unit cell formalism is used to simulate silicon nanocrystals between 216 and 1000 atoms (1.6–2.65 nm in diameter that include Bravais and primitive cell multiples. The investigated properties include core and oxidized surface properties. Results revealed that electronic properties converge to some limit as the size of the nanocrystal increases. Increasing the size of the core of a nanocrystal resulted in an increase of the energy gap, valence band width, and cohesive energy. The lattice constant of the core and oxidized surface parts shows a decreasing trend as the nanocrystal increases in a size that converges to 5.28 Ǻ in a good agreement with the experiment. Surface and core convergence to the same lattice constant reflects good adherence of oxide layer at the surface. The core density of states shows highly degenerate states that split at the oxygenated (001-(1×1 surface due to symmetry breaking. The nanocrystal surface shows smaller gap and higher valence and conduction bands when compared to the core part, due to oxygen surface atoms and reduced structural symmetry. The smaller surface energy gap shows that energy gap of the nanocrystal is controlled by the surface part. Unlike the core part, the surface part shows a descending energy gap that proves its obedience to quantum confinement effects. Nanocrystal geometry proved to have some influence on all electronic properties including the energy gap.

  17. The equilibrium structures of the 900 partial dislocation in silicon

    International Nuclear Information System (INIS)

    Valladares, Alexander; Sutton, A P

    2005-01-01

    We consider the free energies of the single-period (SP) and double-period (DP) core reconstructions of the straight 90 0 partial dislocation in silicon. The vibrational contributions are calculated with a harmonic model. It is found that it leads to a diminishing difference between the free energies of the two core reconstructions with increasing temperature. The question of the relative populations of SP and DP reconstructions in a single straight 90 0 partial dislocation is solved by mapping the problem onto a one-dimensional Ising model in a magnetic field. The model contains only two parameters and is solved analytically. It leads to the conclusion that for the majority of the published energy differences between the SP and DP reconstructions the equilibrium core structure is dominated by the DP reconstruction at all temperatures up to the melting point. We review whether it is possible to distinguish between the SP and DP reconstructions experimentally, both in principle and in practice. We conclude that aberration corrected transmission electron microscopy should be able to distinguish between these two core reconstructions, but published high resolution micrographs do not allow the distinction to be made

  18. Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

    Science.gov (United States)

    Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

    2007-05-28

    We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

  19. Structural health monitoring method for wind turbine trailing edge: Crack growth detection using Fibre Bragg Grating sensor embedded in composite materials

    DEFF Research Database (Denmark)

    Pereira, Gilmar Ferreira; Mikkelsen, Lars Pilgaard; McGugan, Malcolm

    2015-01-01

    In this article a novel method to assess a crack growing/damage event in composite material using Fibre Bragg Grating (FBG) sensors embedded in a host material and its application into a composite material structure, Wind Turbine Trailing Edge, is presented. A Structure-Material-FBG model......, such as compression fields ahead the crack or non-uniform strain fields, and then identify the presence of such damage in the structure. Experimental tests were conducted to fully characterize this concept and support the model. Double Cantilever Beams (DCB), made with two glass fibre beams glued with structural...

  20. Modified genetic algorithms to model cluster structures in medium-size silicon clusters

    International Nuclear Information System (INIS)

    Bazterra, Victor E.; Ona, Ofelia; Caputo, Maria C.; Ferraro, Marta B.; Fuentealba, Patricio; Facelli, Julio C.

    2004-01-01

    This paper presents the results obtained using a genetic algorithm (GA) to search for stable structures of medium size silicon clusters. In this work the GA uses a semiempirical energy function to find the best cluster structures, which are further optimized using density-functional theory. For small clusters our results agree well with previously reported structures, but for larger ones different structures appear. This is the case of Si 36 where we report a different structure, with significant lower energy than those previously found using limited search approaches on common structural motifs. This demonstrates the need for global optimization schemes when searching for stable structures of medium-size silicon clusters

  1. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    Energy Technology Data Exchange (ETDEWEB)

    Bolotov, V. V.; Knyazev, E. V.; Ponomareva, I. V.; Kan, V. E., E-mail: kan@obisp.oscsbras.ru; Davletkildeev, N. A.; Ivlev, K. E.; Roslikov, V. E. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation)

    2017-01-15

    The oxidation of mesoporous silicon in a double-layer “macroporous silicon–mesoporous silicon” structure is studied. The morphology and dielectric properties of the buried insulating layer are investigated using electron microscopy, ellipsometry, and electrical measurements. Specific defects (so-called spikes) are revealed between the oxidized macropore walls in macroporous silicon and the oxidation crossing fronts in mesoporous silicon. It is found that, at an initial porosity of mesoporous silicon of 60%, three-stage thermal oxidation leads to the formation of buried silicon-dioxide layers with an electric-field breakdown strength of E{sub br} ~ 10{sup 4}–10{sup 5} V/cm. Multilayered “porous silicon-on-insulator” structures are shown to be promising for integrated chemical micro- and nanosensors.

  2. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.; Ruffo, Riccardo; Hong, Seung Sae; Huggins, Robert A.; Cui, Yi

    2009-01-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous Lix

  3. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  4. Hydrogen-induced structural changes in polycrystalline silicon as revealed by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Arole, V.M.; Takwale, M.G.; Bhide, V.G.

    1989-01-01

    Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon wafer, brought about by hydrogen passivation. (author)

  5. Fibre Bragg grating sensors for reinforcement corrosion monitoring in civil engineering structures

    International Nuclear Information System (INIS)

    Grattan, S K T; Basheer, P; Taylor, S E; Zhao, W; Sun, T; Grattan, K T V

    2007-01-01

    Fibre optic strain sensors offer a number of advantages over the current electrical resistance type gauges, yet are not widely used in civil engineering applications. The use of fibre optic strain sensors (with a cross comparison with the output of electrical resistance gauges) to monitor the production of corrosion by-products in civil engineering concrete structures containing reinforcement bars has been investigated and results reported

  6. Bend sensing with long-period fiber gratings in capillaries embedded in structures

    Czech Academy of Sciences Publication Activity Database

    Chomát, Miroslav; Berková, Daniela; Todorov, Filip; Čtyroký, Jiří; Matějec, Vlastimil; Kašík, Ivan; Proboštová, Jana; Salvia, M.; Jehid, J.

    2008-01-01

    Roč. 28, 5/6 (2008), s. 716-721 ISSN 0928-4931. [Journees Maghreb-Europe sur les Materiaux et Leurs Applications aux Dispositifs et Capteurs MADICA 2006 /5./. Mahdia, 30.10.2006-01.11.2006] R&D Projects: GA ČR GA102/06/1851 Institutional research plan: CEZ:AV0Z20670512 Keywords : fibre optic sensors * periodic structures Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.812, year: 2008

  7. Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

    International Nuclear Information System (INIS)

    Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

    2011-01-01

    Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

  8. Fabrication update on critical-angle transmission gratings for soft x-ray grating spectrometers

    Science.gov (United States)

    Heilmann, Ralf K.; Bruccoleri, Alex; Mukherjee, Pran; Yam, Jonathan; Schattenburg, Mark L.

    2011-09-01

    Diffraction grating-based, wavelength dispersive high-resolution soft x-ray spectroscopy of celestial sources promises to reveal crucial data for the study of the Warm-Hot Intergalactic Medium, the Interstellar Medium, warm absorption and outflows in Active Galactic Nuclei, coronal emission from stars, and other areas of interest to the astrophysics community. Our recently developed critical-angle transmission (CAT) gratings combine the advantages of the Chandra high and medium energy transmission gratings (low mass, high tolerance of misalignments and figure errors, polarization insensitivity) with those of blazed reflection gratings (high broad band diffraction efficiency, high resolution through use of higher diffraction orders) such as the ones on XMM-Newton. Extensive instrument and system configuration studies have shown that a CAT grating-based spectrometer is an outstanding instrument capable of delivering resolving power on the order of 5,000 and high effective area, even with a telescope point-spread function on the order of many arc-seconds. We have fabricated freestanding, ultra-high aspect-ratio CAT grating bars from silicon-on-insulator wafers using both wet and dry etch processes. The 200 nm-period grating bars are supported by an integrated Level 1 support mesh, and a coarser external Level 2 support mesh. The resulting grating membrane is mounted to a frame, resulting in a grating facet. Many such facets comprise a grating array that provides light-weight coverage of large-area telescope apertures. Here we present fabrication results on the integration of CAT gratings and the different high-throughput support mesh levels and on membrane-frame bonding. We also summarize recent x-ray data analysis of 3 and 6 micron deep wet-etched CAT grating prototypes.

  9. Mechanism of equivalent electric dipole oscillation for high-order harmonic generation from grating-structured solid-surface by femtosecond laser pulse

    Science.gov (United States)

    Wang, Yang; Song, Hai-Ying; Liu, H. Y.; Liu, Shi-Bing

    2017-07-01

    We theoretically study high-order harmonic generation (HHG) from relativistically driven overdense plasma targets with rectangularly grating-structured surfaces by femtosecond laser pulses. Our particle-in-cell (PIC) simulations show that, under the conditions of low laser intensity and plasma density, the harmonics emit principally along small angles deviating from the target surface. Further investigation of the surface electron dynamics reveals that the electron bunches are formed by the interaction between the laser field and the target surface, giving rise to the oscillation of equivalent electric-dipole (OEED), which enhances specific harmonic orders. Our work helps understand the mechanism of harmonic emissions from grating targets and the distinction from the planar harmonic scheme.

  10. Porous silicon structures with high surface area/specific pore size

    Science.gov (United States)

    Northrup, M.A.; Yu, C.M.; Raley, N.F.

    1999-03-16

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

  11. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  12. Gravitational Grating

    Science.gov (United States)

    Rahvar, Sohrab

    2018-05-01

    In this work, we study the interaction of the electromagnetic wave (EW) from a distant quasar with the gravitational wave (GW) sourced by the binary stars. While in the regime of geometric optics, the light bending due to this interaction is negligible, we show that the phase shifting on the wavefront of an EW can produce the diffraction pattern on the observer plane. The diffraction of the light (with the wavelength of λe) by the gravitational wave playing the role of gravitational grating (with the wavelength of λg) has the diffraction angle of Δβ ˜ λe/λg. The relative motion of the observer, the source of gravitational wave and the quasar results in a relative motion of the observer through the interference pattern on the observer plane. The consequence of this fringe crossing is the modulation in the light curve of a quasar with the period of few hours in the microwave wavelength. The optical depth for the observation of this phenomenon for a Quasar with the multiple images strongly lensed by a galaxy where the light trajectory of some of the images crosses the lensing galaxy is τ ≃ 0.2. By shifting the time-delay of the light curves of the multiple images in a strong lensed quasar and removing the intrinsic variations of a quasar, our desired signals, as a new method for detection of GWs can be detected.

  13. Effect of UV irradiations on the structural and optical features of porous silicon: application in silicon solar cells

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Boujmil, M.F.; Ben Rabha, M.; Bessaies, B.

    2004-01-01

    The aim of this paper is to investigate the structural and optical stability of porous silicon layers (PSLs) planned to be used in silicon solar cells technology. The PSLs were prepared by a HNO 3 /HF vapor etching (VE) based method. Fourier transform infrared (FT-IR) spectroscopy shows that fresh VE-based PSLs contain N-H and Si-F bonds related to a ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 minor phase, and conventional Si-H x and Si-O x bonds. Free air exposures of PSLs without and with UV irradiation lead to oxidation or photo-oxidation of the porous layer, respectively. FT-IR characterisation of the PSLs shows that UV irradiations modify the transformation kinetics replacing instable Si-H x by Si-O x or Si-O-H bonds. When fresh PSLs undergo free air oxidation within 7 days, the surface reflectivity decreases from 10 to about 8%, while it drops to about 4% when a 10 min free air UV irradiation is applied. Long periods of free air oxidation do not ensure the reflectivity to be stable, whereas it becomes stable after only 10 min of UV irradiation. This behaviour was explained taking into account the kinetic differences between oxidation with and without UV irradiation. Fresh VE-based PSLs were found to improve efficiently the photovoltaic (PV) characteristics of crystalline silicon solar cells. The passivating action of VE-based PSLs was discussed. An improvement of the PV performances was observed solely for stable oxidized porous silicon (PS) structures obtained from UV irradiations

  14. Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

    CERN Document Server

    Askinazi, A Y; Miloglyadova, L V

    2002-01-01

    One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

  15. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  16. Hybrid integration of carbon nanotubes in silicon photonic structures

    Science.gov (United States)

    Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

    2017-02-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

  17. Structural and spectroscopic analysis of hot filament decomposed ethylene deposited at low temperature on silicon surface

    International Nuclear Information System (INIS)

    Tung, F.-K.; Perevedentseva, E.; Chou, P.-W.; Cheng, C.-L.

    2005-01-01

    The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed

  18. Direct modification of silicon surface by nanosecond laser interference lithography

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

    2013-10-01

    Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

  19. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Pantleon, Karen

    2006-01-01

    Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the < 110 > direct......Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the ... > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets...

  20. Femtosecond laser pulse written Volume Bragg Gratings

    Directory of Open Access Journals (Sweden)

    Richter Daniel

    2013-11-01

    Full Text Available Femtosecond laser pulses can be applied for structuring a wide range of ransparent materials. Here we want to show how to use this ability to realize Volume-Bragg-Gratings in various- mainly non-photosensitive - glasses. We will further present the characteristics of the realized gratings and a few elected applications that have been realized.

  1. Type I Clathrates as Novel Silicon Anodes: An Electrochemical and Structural Investigation

    Science.gov (United States)

    Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; Davidowski, Stephen K.; Baggetto, Loïc; Zhao, Ran; Cheng, Qian; Yarger, Jeffery L.; Veith, Gabriel M.; Ellis‐Terrell, Carol; Miller, Michael A.; Chan, Kwai S.

    2015-01-01

    Silicon clathrates contain cage‐like structures that can encapsulate various guest atoms or molecules. An electrochemical evaluation of type I silicon clathrates based on Ba8AlySi46−y as the anode material for lithium‐ion batteries is presented here. Postcycling characterization with nuclear magnetic resonance and X‐ray diffraction shows no discernible structural or volume changes even after electrochemical insertion of 44 Li (≈1 Li/Si) into the clathrate structure. The observed properties are in stark contrast with lithiation of other silicon anodes, which become amorphous and suffer from large volume changes. The electrochemical reactions are proposed to occur as single phase reactions at approximately 0.2 and 0.4 V versus Li/Li+ during lithiation and delithiation, respectively, distinct from diamond cubic or amorphous silicon anodes. Reversible capacities as high as 499 mAh g−1 at a 5 mA g−1 rate were observed for silicon clathrate with composition Ba8Al8.54Si37.46, corresponding to ≈1.18 Li/Si. These results show that silicon clathrates could be promising durable anodes for lithium‐ion batteries. PMID:27980951

  2. Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

    Institute of Scientific and Technical Information of China (English)

    Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

    2011-01-01

    The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

  3. Structural and photoluminescence properties of silicon nanowires extracted by means of a centrifugation process from plasma torch synthesized silicon nanopowder

    Science.gov (United States)

    Le Borgne, Vincent; Agati, Marta; Boninelli, Simona; Castrucci, Paola; De Crescenzi, Maurizio; Dolbec, Richard; El Khakani, My Ali

    2017-07-01

    We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of a plasma torch based spheroidization process of silicon. This by-product is a nanopowder which consists of a mixture of SiNWs and silicon particles. By optimizing a centrifugation based process, we were able to extract substantial amounts of highly pure Si nanomaterials (mainly SiNWs and Si nanospheres (SiNSs)). While the purified SiNWs were found to have typical outer diameters in the 10-15 nm range and lengths of up to several μm, the SiNSs have external diameters in the 10-100 nm range. Interestingly, the SiNWs are found to have a thinner Si core (2-5 nm diam.) and an outer silicon oxide shell (with a typical thickness of ˜5-10 nm). High resolution transmission electron microscopy (HRTEM) observations revealed that many SiNWs have a continuous cylindrical core, whereas others feature a discontinuous core consisting of a chain of Si nanocrystals forming a sort of ‘chaplet-like’ structures. These plasma-torch-produced SiNWs are highly pure with no trace of any metal catalyst, suggesting that they mostly form through SiO-catalyzed growth scheme rather than from metal-catalyzed path. The extracted Si nanostructures are shown to exhibit a strong photoluminescence (PL) which is found to blue-shift from 950 to 680 nm as the core size of the Si nanostructures decreases from ˜5 to ˜3 nm. This near IR-visible PL is shown to originate from quantum confinement (QC) in Si nanostructures. Consistently, the sizes of the Si nanocrystals directly determined from HRTEM images corroborate well with those expected by QC theory.

  4. Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

    Science.gov (United States)

    Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

    2017-05-01

    Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.

  5. Running gratings in photoconductive materials

    DEFF Research Database (Denmark)

    Kukhtarev, N. V.; Kukhtareva, T.; Lyuksyutov, S. F.

    2005-01-01

    Starting from the three-dimensional version of a standard photorefractive model (STPM), we obtain a reduced compact Set of equations for an electric field based on the assumption of a quasi-steady-state fast recombination. The equations are suitable for evaluation of a current induced by running...... gratings at small-contrast approximation and also are applicable for the description of space-charge wave domains. We discuss spatial domain and subharmonic beam formation in bismuth silicon oxide (BSO) crystals in the framework of the small-contrast approximation of STPM. The experimental results...

  6. Lithium concentration dependent structure and mechanics of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Yan, C., E-mail: c2.yan@qut.edu.au [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane QLD 4001 (Australia); Zhang, S. [Centre for Clean Environment and Energy, Environmental Futures Research Institute and Griffith School of Environment, Gold Coast Campus, Griffith University, QLD 4222 (Australia)

    2016-06-28

    A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of Li{sub x}Si alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a Li{sub x}Si system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

  7. Soft photo structuring of porous silicon in water

    Energy Technology Data Exchange (ETDEWEB)

    Juan, M.; Bouillard, J.S.; Plain, J.; Bachelot, R.; Adam, P.M.; Lerondel, G.; Royer, P. [ICD - Laboratoire de Nanotechnologie et d' Instrumentation Optique, CNRS FRE 2848, Universite de Technologie de Troyes, 12 rue Marie Curie, BP 2060, 10010 Troyes (France)

    2007-05-15

    We report on local photo-induced patterning of porous silicon in water. Scanning probe microscopy images of the sample surface after illumination show that the emission properties as well as the topography are modified according to the interferometric illumination pattern. Local photo-oxidation is believed to be at the origin of these modifications. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Computational multiobjective topology optimization of silicon anode structures for lithium-ion batteries

    Science.gov (United States)

    Mitchell, Sarah L.; Ortiz, Michael

    2016-09-01

    This study utilizes computational topology optimization methods for the systematic design of optimal multifunctional silicon anode structures for lithium-ion batteries. In order to develop next generation high performance lithium-ion batteries, key design challenges relating to the silicon anode structure must be addressed, namely the lithiation-induced mechanical degradation and the low intrinsic electrical conductivity of silicon. As such this work considers two design objectives, the first being minimum compliance under design dependent volume expansion, and the second maximum electrical conduction through the structure, both of which are subject to a constraint on material volume. Density-based topology optimization methods are employed in conjunction with regularization techniques, a continuation scheme, and mathematical programming methods. The objectives are first considered individually, during which the influence of the minimum structural feature size and prescribed volume fraction are investigated. The methodology is subsequently extended to a bi-objective formulation to simultaneously address both the structural and conduction design criteria. The weighted sum method is used to derive the Pareto fronts, which demonstrate a clear trade-off between the competing design objectives. A rigid frame structure was found to be an excellent compromise between the structural and conduction design criteria, providing both the required structural rigidity and direct conduction pathways. The developments and results presented in this work provide a foundation for the informed design and development of silicon anode structures for high performance lithium-ion batteries.

  9. Morphology of IR and UV Laser-induced Structural Changes on Silicon Surfaces

    International Nuclear Information System (INIS)

    Jimenez-Jarquin, J.; Haro-Poniatowski, E.; Fernandez-Guasti, M.; Hernandez-Pozos, J.L.

    2005-01-01

    Using scanning electronic microscopy, we analyze the structural changes induced in silicon (100) wafers by focused IR (1064 nm) and UV (355 nm) nanosecond laser pulses. The experiments were performed in the laser ablation regime. When a silicon surface is irradiated by laser pulses in an O2 atmosphere conical microstructures are obtained. The changes in silicon surface morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however the final result consist of an array of microcones when the experiment is carried out in oxygen. We employ a random scanning technique to irradiate silicon surfaces over large areas. In this form we have obtained large patterned areas

  10. Silicon nanowire structures as high-sensitive pH-sensors

    International Nuclear Information System (INIS)

    Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

    2012-01-01

    Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

  11. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  12. Structural simplicity as a restraint on the structure of amorphous silicon

    Science.gov (United States)

    Cliffe, Matthew J.; Bartók, Albert P.; Kerber, Rachel N.; Grey, Clare P.; Csányi, Gábor; Goodwin, Andrew L.

    2017-06-01

    Understanding the structural origins of the properties of amorphous materials remains one of the most important challenges in structural science. In this study, we demonstrate that local "structural simplicity", embodied by the degree to which atomic environments within a material are similar to each other, is a powerful concept for rationalizing the structure of amorphous silicon (a -Si) a canonical amorphous material. We show, by restraining a reverse Monte Carlo refinement against pair distribution function (PDF) data to be simpler, that the simplest model consistent with the PDF is a continuous random network (CRN). A further effect of producing a simple model of a -Si is the generation of a (pseudo)gap in the electronic density of states, suggesting that structural homogeneity drives electronic homogeneity. That this method produces models of a -Si that approach the state-of-the-art without the need for chemically specific restraints (beyond the assumption of homogeneity) suggests that simplicity-based refinement approaches may allow experiment-driven structural modeling techniques to be developed for the wide variety of amorphous semiconductors with strong local order.

  13. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    International Nuclear Information System (INIS)

    Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC

  14. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    CERN Document Server

    Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

  15. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  16. The Flexibility of Pusher Furnace Grate

    Directory of Open Access Journals (Sweden)

    Słowik J.A.

    2016-12-01

    Full Text Available The lifetime of guide grates in pusher furnaces for heat treatment could be increased by raising the flexibility of their structure through, for example, the replacement of straight ribs, parallel to the direction of grate movement, with more flexible segments. The deformability of grates with flexible segments arranged in two orientations, i.e. crosswise (perpendicular to the direction of compression and lengthwise (parallel to the direction of compression, was examined. The compression process was simulated using SolidWorks Simulation program. Relevant regression equations were also derived describing the dependence of force inducing the grate deformation by 0.25 mm ‒ modulus of grate elasticity ‒ on the number of flexible segments in established orientations. These calculations were made in Statistica and Scilab programs. It has been demonstrated that, with the same number of segments, the crosswise orientation of flexible segments increases the grate structure flexibility in a more efficient way than the lengthwise orientation. It has also been proved that a crucial effect on the grate flexibility has only the quantity and orientation of segments (crosswise / lengthwise, while the exact position of segments changes the grate flexibility by less than 1%.

  17. Silicon effect on the composition and structure of nanocalcium phosphates

    Energy Technology Data Exchange (ETDEWEB)

    Tomoaia, Gheorghe [Orthophedics and Traumatology Department, Iuliu Hatieganu University of Medicine and Pharmacy, 47 Traian Mosoiu Str., Cluj-Napoca 400132 (Romania); Mocanu, Aurora [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania); Vida-Simiti, Ioan; Jumate, Nicolae [Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Bd., Cluj-Napoca 400641 (Romania); Bobos, Liviu-Dorel [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania); Soritau, Olga [Oncology Institute of Cluj-Napoca, 34-36 Republicii Str., 400015 Cluj-Napoca (Romania); Tomoaia-Cotisel, Maria, E-mail: mtcotisel.ubbcluj@yahoo.ro [Department of Chemical Engineering, Babes-Bolyai University of Cluj-Napoca, 11 Arany J. Str., Cluj-Napoca 400028 (Romania)

    2014-04-01

    Nanostructured calcium phosphates, such as nanohydroxyapatite (HAP) and HAP with silicon content (HAP-Si) of 0.47 wt.% (1% SiO{sub 2}), 2.34 wt.% (5% SiO{sub 2}) and 4.67 wt.% (10% SiO{sub 2}) in the final product, were synthesized by aqueous precipitation, freeze dried and then calcined at 650, 950 and 1150 °C. The obtained materials were investigated by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrometry, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) imaging. From the analysis of the XRD patterns, the HAP and β-tricalcium phosphate (β-TCP) phases were identified and their amounts in the samples were estimated. The size of HAP and β-TCP crystallites was estimated to be in the nanocrystalline domain. FTIR spectra showed the presence of characteristic vibrations for P–O, H–O and Si–O groups and their modification with Si content and calcination temperature. TEM, SEM and AFM images also revealed the morphology of the particles and of their aggregates. These materials have been used to manufacture scaffolds which were tested for their influence on adhesion and proliferation of cells, in human osteoblast culture, considering their further use in bone reconstruction. It was found that an appropriate addition of silicon in nanocalcium phosphate scaffolds leads to an enhanced adhesion and proliferation of cells in osteoblasts in vitro. - Highlights: • Nanostructured calcium phosphates with different silicon contents were synthesized. • Scaffolds made from hydroxyapatites with Si were used in human osteoblast cultures. • All scaffolds proved to be biocompatible to human osteoblasts in vitro. • Cell adhesion and proliferation were improved for scaffolds with 0.47 and 2.34% Si.

  18. An Annotated Bibliography on Silicon Nitride for Structural Applications

    Science.gov (United States)

    1977-03-01

    annotated in this bibliography with each entry under the name of the specific author. 16. Canteloup, J., and Mocellin , A., "Synthesis of...thinning. Oxidation of the SJ3N4 grains started at the grain boundaries. 81. Torre, J. P., and Mocellin , A., "On the Existence of Si-AI-O-N Solid...Torre, J. P., and Mocellin , A., "Some Effects of Al and O2 on the Nitridation of Silicon Compacts", J. Mater. Sei., 11., 1725-1733(1976). Highest final

  19. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  20. Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

    CERN Document Server

    Sachenko, A V; Manojlov, E G; Svechnikov, S V

    2001-01-01

    The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

  1. Characterization of Ge Nano structures Embedded Inside Porous Silicon for Photonics Application

    International Nuclear Information System (INIS)

    Rahim, A.F.A.; Hashim, M.R.; Rahim, A.F.A.; Ali, N.K.

    2011-01-01

    In this work we prepared germanium nano structures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650 degree Celsius for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400 degree Celsius for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nano structures in the porous silicon. (author)

  2. Fabrication and characterization of a metal-packaged regenerated fiber Bragg grating strain sensor for structural integrity monitoring of high-temperature components

    International Nuclear Information System (INIS)

    Tu, Yun; Tu, Shan-Tung

    2014-01-01

    Assessment of the structural integrity of components operating at high temperatures requires the development of novel sensors to measure strain. A metal-packaged regenerated fiber Bragg grating (RFBG) sensor is developed for measurement of strain using titanium–silver magnetron sputtering and nickel electroplating. The strain response of the sensor mounted onto a flat tensile specimen by spot welding is evaluated by uniaxial tensile tests at constant temperatures ranging from room temperature to 400 °C. Similar tests are performed on a bare RFBG sensor for comparison. The metal-packaged RFBG strain sensor exhibits higher strain sensitivity than that of the bare RFBG sensor, as well as good linearity, stability and repeatability of strain measurements. A three-dimensional finite element model of the sensor is established to predict the strain sensitivity based on the sensing principle of the fiber Bragg grating. Comparisons of the experimental results with the numerical predictions for the strain sensitivity show a satisfactory agreement. These results demonstrate that the metal-packaged RFBG strain sensors can be successfully fabricated by combining magnetron sputtering with electroplating, and provide great promise for structural integrity monitoring of high-temperature components. (paper)

  3. Tunnel current through virus particles between columnar structures in mesoporous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vashpanov, Yuriy; Jung, Jae-Il; Dal Kwack, Kae [Electrical Engineering and Computer Science Division of Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Seongdong-gu, 133-791 Seoul (Korea, Republic of)

    2011-07-15

    Earlier we reported on a tunnel charge transport mechanism in mesoporous silicon with columnar structures under adsorption of plant nematode-transmitted polyhedral (NEPO) viruses at room temperature. Additional experiments are performed in this paper to establish that this observed tunnel current is connected to a conduction path through virus particles. The plant NEPO viruses have an orbicular shape with a diameter of around 25-30 nm. This size is matched well to the porous size distribution in manufactured samples. The tunnel charge transport in semiconductor structures was not observed on loading protein macromolecules of smaller sizes. A physical mechanism of the observed phenomena can be interpreted to be the result of a shunting effect through virus particles between the two closely located columnar silicon structures. This effect is likely to result from double points at virus adsorption under the condition of matching of pore and virus sizes. The magnitudes of the tunnel barrier heights depend on the type of loaded plant viruses. The investigated columnar structures of mesoporous silicon can be used for research on the electrical properties of different viruses with corresponding sizes in the range of 20-30 nm. The existence of a tunnel current between columnar structures in mesoporous silicon under virus adsorption can be used as a simple method for their detection in the environment. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Nanostructured gold and platinum electrodes on silicon structures for biosensing

    International Nuclear Information System (INIS)

    Ogurtsov, V I; Sheehan, M M

    2005-01-01

    Gold and platinum metal electrodes on Si/SiO 2 having undergone anisotropic potassium hydroxide (KOH) etch treatment are considered. This treatment etches at different rates and directions in the material resulting in creation of numerous pyramid shaped holes in the silicon substrate. This surface is used to make metal electrodes with increased electrode efficiency. The electrodes can serve as the sensors or as the sensor substrates (for surface polymer modification) and because both gold and platinum are inert they have applications for food safety biosensing. Wine, an economically significant food product, was chosen as a matrix, and impedance spectroscopy (EIS) was selected as a method of investigation of electrode behaviour. Based on results of EIS, different complexity equivalent circuits were determined by applying fitting mean square root optimisation of sensor complex impedance measurements

  5. Band structure of germanium carbides for direct bandgap silicon photonics

    Energy Technology Data Exchange (ETDEWEB)

    Stephenson, C. A., E-mail: cstephe3@nd.edu; Stillwell, R. A.; Wistey, M. A. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); O' Brien, W. A. [Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710 (United States); Penninger, M. W. [Honeywell UOP, Des Plaines, Illinois 60016 (United States); Schneider, W. F. [Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Gillett-Kunnath, M. [Department of Chemistry, Syracuse University, Syracuse, New York 13244 (United States); Zajicek, J. [Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Yu, K. M. [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2016-08-07

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge{sub 1−x}C{sub x} (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge{sub 0.998}C{sub 0.002} shows a bandgap reduction supporting these results. Growth of Ge{sub 0.998}C{sub 0.002} using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III–V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  6. Elastocapillary folding of three dimensional micro-structures using water pumped through the wafer via a silicon nitride tube

    NARCIS (Netherlands)

    Legrain, A.B.H.; Berenschot, Johan W.; Sanders, Remco G.P.; Ma, Kechun; Tas, Niels Roelof; Abelmann, Leon

    2011-01-01

    In this paper we present the first investigation of a batch method for folding of threedimensional micrometer-sized silicon nitride structures by capillary forces. Silicon nitride tubes have been designed and fabricated using DRIE at the center of the planar origami patterns of the structures. Water

  7. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  8. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    Bhaskaran, M; Sriram, S; Sim, L W

    2008-01-01

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  9. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  10. Experimental broadband absorption enhancement in silicon nanohole structures with optimized complex unit cells.

    Science.gov (United States)

    Lin, Chenxi; Martínez, Luis Javier; Povinelli, Michelle L

    2013-09-09

    We design silicon membranes with nanohole structures with optimized complex unit cells that maximize broadband absorption. We fabricate the optimized design and measure the optical absorption. We demonstrate an experimental broadband absorption about 3.5 times higher than an equally-thick thin film.

  11. Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

    NARCIS (Netherlands)

    de Boer, Meint J.; Gardeniers, Johannes G.E.; Jansen, Henricus V.; Gilde, M.J.; Roelofs, Gerard; Sasserath, Jay N.; Elwenspoek, Michael Curt

    This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF6/O2-based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile

  12. Deep-etched sinusoidal polarizing beam splitter grating.

    Science.gov (United States)

    Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lv, Peng

    2010-04-01

    A sinusoidal-shaped fused-silica grating as a highly efficient polarizing beam splitter (PBS) is investigated based on the simplified modal method. The grating structure depends mainly on the ratio of groove depth to grating period and the ratio of incident wavelength to grating period. These ratios can be used as a guideline for the grating design at different wavelengths. A sinusoidal-groove PBS grating is designed at a wavelength of 1310 nm under Littrow mounting, and the transmitted TM and TE polarized waves are mainly diffracted into the zeroth order and the -1st order, respectively. The grating profile is optimized by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient (>95.98%) over the O-band wavelength range (1260-1360 nm) for both TE and TM polarizations. The sinusoidal grating can exhibit higher diffraction efficiency, larger extinction ratio, and less reflection loss than the rectangular-groove PBS grating. By applying wet etching technology on the rectangular grating, which was manufactured by holographic recording and inductively coupled plasma etching technology, the sinusoidal grating can be approximately fabricated. Experimental results are in agreement with theoretical values.

  13. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  14. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  15. Silicon-integrated thin-film structure for electro-optic applications

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick Joseph

    2000-01-01

    A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

  16. Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

    International Nuclear Information System (INIS)

    Morel, D.L.; Moustakas, T.D.

    1981-01-01

    The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

  17. Effects of deep impurities and structural defects in polycrystalline silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Galluzzi, F.; Scafe, E.; Beghi, M.; Fossati, S.; Tincani, M.; Pizzini, S.

    1985-01-01

    An extensive experimental study of minority carrier recombination in CZ grown polycrystalline silicon intentionally doped with metallic impurities (Ti, V, Fe, Cr, Zr) is reported. Experimental values of average diffusion lengths have been compared with values calculated by a simple model of carrier recombination, taking into account the effects of impurities, grain boundaries and intragrain crystal defects. The results are fairly consistent and allow the determination of threshold densities for structural defects and deep impurities. The author's analysis gives a simple quantitative description of recombination processes in solar-grade silicon, as far as the average behaviour is concerned

  18. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  19. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  20. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  1. Silicon carbide composites as fusion power reactor structural materials

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L., E-mail: SneadLL@ORNL.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Nozawa, T. [Fusion Research and Development Directorate, Japan Atomic Energy Agency, 2-4 Shirakata Shirane, Tokai, Ibaraki 319-1195 (Japan); Ferraris, M. [Politecnico di Torino-DISMIC c. Duca degli Abruzzi, 24I-10129 Torino (Italy); Katoh, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Shinavski, R. [Hypertherm HTC, 18411 Gothard St., Units A/B/C, Huntington Beach, CA 92648 (United States); Sawan, M. [University of Wisconsin, Madison 417 Engineering Research Building, 1500 Engineering Drive Madison, WI 53706-1687 (United States)

    2011-10-01

    Silicon carbide was first proposed as a low activation fusion reactor material in the mid 1970s. However, serious development of this material did not begin until the early 1990s, driven by the emergence of composite materials that provided enhanced toughness and an implied ability to use these typically brittle materials in engineering application. In the decades that followed, SiC composite system was successfully transformed from a poorly performing curiosity into a radiation stable material of sufficient maturity to be considered for near term nuclear and non-nuclear systems. In this paper the recent progress in the understanding and of basic phenomenon related to the use of SiC and SiC composite in fusion applications will be presented. This work includes both fundamental radiation effects in SiC and engineering issues such as joining and general materials properties. Additionally, this paper will briefly discuss the technological gaps remaining for the practical application of this material system in fusion power devices such as DEMO and beyond.

  2. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  3. Structure and field emission of graphene layers on top of silicon nanowire arrays

    International Nuclear Information System (INIS)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  4. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-01-30

    Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  5. Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state

    International Nuclear Information System (INIS)

    Degoli, Elena; Bisi, O.; Ossicini, Stefano; Cantele, G.; Ninno, D.; Luppi, Eleonora; Magri, Rita

    2004-01-01

    Electronic and structural properties of small hydrogenated silicon nanoclusters as a function of dimension are calculated from ab initio technique. The effects induced by the creation of an electron-hole pair are discussed in detail, showing the strong interplay between the structural and optical properties of the system. The distortion induced on the structure after an electronic excitation of the cluster is analyzed together with the role of the symmetry constraint during the relaxation. We point out how the overall effect is that of significantly changing the electronic spectrum if no symmetry constraint is imposed to the system. Such distortion can account for the Stokes shift and provides a possible structural model to be linked to the four-level scheme invoked in the literature to explain recent results for the optical gain in silicon nanoclusters. Finally, formation energies for clusters with increasing dimension are calculated and their relative stability discussed

  6. Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, G. E., E-mail: geyakovlev@etu.ru; Frolov, D. S.; Zubkova, A. V. [St. Petersburg State Electrotechnical University “LETI” (Russian Federation); Levina, E. E. [JSC National Research Institute “Electron” (Russian Federation); Zubkov, V. I.; Solomonov, A. V. [St. Petersburg State Electrotechnical University “LETI” (Russian Federation); Sterlyadkin, O. K.; Sorokin, S. A. [JSC National Research Institute “Electron” (Russian Federation)

    2016-03-15

    The method of electrochemical capacitance–voltage profiling is used to study boron-implanted silicon structures for CCD matrices with backside illumination. A series of specially prepared structures with different energies and doses of ion implantation and also with various materials used for the coating layers (aluminum, silicon oxide, and their combinations) is studied. The profiles of the depth distribution of majority charge carriers of the studied structures are obtained experimentally. Also, using the Poisson equation and the Fredholm equation of the first kind, the distributions of the charge-carrier concentration and of the electric field in the structures are calculated. On the basis of the analysis and comparison of theoretical and experimental concentration profiles, recommendations concerning optimization of the structures’ parameters in order to increase the value of the pulling field and decrease the effect of the surface potential on the transport of charge carriers are suggested.

  7. Radiation defect formation in two-barrier structures based on silicon

    International Nuclear Information System (INIS)

    Madatov, R.S.; Abbasov, F.P.; Mustafayev, Yu.M.

    2013-01-01

    It was developed a silicon-based photodetector with high integral sensitivity in low-wave spectrum. It was investigated the effect of gamma radiation on the mechanism of current transport in the structure of Schottky barrier type and in transitions. It is shown that the double-barrier structures can improve the photovoltaic parameters of conventional detectors. For the first time it was obtained and studied the characteristics of two-barrier structures created on the same plane. The advantages over conventional structures are shown. The annealing point is changing the structure of radiation defects and leads to their disappearance

  8. Corrugated grating on organic multilayer Bragg reflector

    Science.gov (United States)

    Jaquet, Sylvain; Scharf, Toralf; Herzig, Hans Peter

    2007-08-01

    Polymeric multilayer Bragg structures are combined with diffractive gratings to produce artificial visual color effects. A particular effect is expected due to the angular reflection dependence of the multilayer Bragg structure and the dispersion caused by the grating. The combined effects can also be used to design particular filter functions and various resonant structures. The multilayer Bragg structure is fabricated by spin-coating of two different low-cost polymer materials in solution on a cleaned glass substrate. These polymers have a refractive index difference of about 0.15 and permit multilayer coatings without interlayer problems. Master gratings of different periods are realized by laser beam interference and replicated gratings are superimposed on the multilayer structure by soft embossing in a UV curing glue. The fabrication process requires only polymer materials. The obtained devices are stable and robust. Angular dependent reflection spectrums for the visible are measured. These results show that it is possible to obtain unexpected reflection effects. A rich variety of color spectra can be generated, which is not possible with a single grating. This can be explained by the coupling of transmission of grating orders and the Bragg reflection band. A simple model permits to explain some of the spectral vs angular dependence of reflected light.

  9. Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

    Science.gov (United States)

    Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

    2015-09-02

    In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

  10. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  11. Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

    International Nuclear Information System (INIS)

    Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

    2012-01-01

    Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

  12. Progress in thin-film silicon solar cells based on photonic-crystal structures

    Science.gov (United States)

    Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

    2018-06-01

    We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

  13. Formation of cross-cutting structures with different porosity on thick silicon wafers

    Directory of Open Access Journals (Sweden)

    Vera A. Yuzova

    2017-06-01

    The second type pass-through structures include a macroporous silicon layer with a thickness of 250 μm which interlock in the depth of the silicon wafer to form a cavity with a size of 4–8 μm. For the formation of the second type structures we only used the first one of the abovementioned stages, the etching time being longer, i.e. 210 min. All the etching procedures were carried out in a cooling chamber at 5 °C. The developed technology will provided for easier and more reliable formation of the monolithic structures of membrane-electrode assembly micro fuel cells.

  14. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

    2013-11-15

    We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

  15. Electronic structures of ultra-thin silicon carbides deposited on graphite

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

  16. First-principles study of structural & electronic properties of pyramidal silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jariwala, Pinank; Thakor, P. B. [Department of Physics, Veer Narmad South Gujarat University, Surat 395 007, Gujarat (India); Singh, Deobrat; Sonvane, Y. A., E-mail: yasonvane@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Gupta, Sanjeev K. [Department of Physics, St. Xavier’s College, Ahmedabad 38 0009 (India)

    2016-05-23

    We have investigated the stable structural and electronic properties of Silicon (Si) nanowires having different cross-sections with 5-7 Si atoms per unit cell. These properties of the studied Si nanowires were significantly changed from those of diamond bulk Si structure. The binding energy increases as increasing atoms number per unit cell in different SiNWs structures. All the nanowires structures are behave like metallic rather than semiconductor in bulk systems. In general, the number of conduction channels increases when the nanowire becomes thicker. The density of charge revealed delocalized metallic bonding for all studied Si nanowires.

  17. An elastomeric grating coupler

    NARCIS (Netherlands)

    Kocabas, A.; Ay, F.; Dana, A.; Aydinli, A.

    We report on a novel nondestructive and reversible method for coupling free space light to planar optical waveguides. In this method, an elastomeric grating is used to produce an effective refractive index modulation on the surface of the optical waveguide. The external elastomeric grating binds to

  18. Bragg gratings in Topas

    DEFF Research Database (Denmark)

    Zhang, C.; Webb, D.J.; Kalli, K.

    We report for the first time fibre Bragg grating inscription in microstructured optical fibre fabricated from Topas® cyclic olefin copolymer. The temperature sensitivity of the grating was studied revealing a positive Bragg wavelength shift of approximately 0.8 nmK-1,the largest sensitivity yet...

  19. Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

    Science.gov (United States)

    Saber, Md Ghulam; Wang, Yun; El-Fiky, Eslam; Patel, David; Shahriar, Kh Arif; Alam, Md Samiul; Jacques, Maxime; Xing, Zhenping; Xu, Luhua; Abadía, Nicolás; Plant, David V

    2018-01-01

    We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 μm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 μm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

  20. Optical spatial differentiator based on subwavelength high-contrast gratings

    Science.gov (United States)

    Dong, Zhewei; Si, Jiangnan; Yu, Xuanyi; Deng, Xiaoxu

    2018-04-01

    An optical spatial differentiator based on subwavelength high-contrast gratings (HCGs) is proposed experimentally. The spatial differentiation property of the subwavelength HCG is analyzed by calculating its spatial spectral transfer function based on the periodic waveguide theory. By employing the FDTD solutions, the performance of the subwavelength HCG spatial differentiator was investigated numerically. The subwavelength HCG differentiator with the thickness at the nanoscale was fabricated on the quartz substrate by electron beam lithography and Bosch deep silicon etching. Observed under an optical microscope with a CCD camera, the spatial differentiation of the incident field profile was obtained by the subwavelength HCG differentiator in transmission without Fourier lens. By projecting the images of slits, letter "X," and a cross on the subwavelength HCG differentiator, edge detections of images were obtained in transmission. With the nanoscale HCG structure and simple optical implementation, the proposed optical spatial differentiator provides the prospects for applications in optical computing systems and parallel data processing.

  1. Local structure reconstruction in hydrogenated amorphous silicon from angular correlation and synchrotron diffraction studies

    International Nuclear Information System (INIS)

    Britton, D.T.; Minani, E.; Knoesen, D.; Schut, H.; Eijt, S.W.H.; Furlan, F.; Giles, C.; Haerting, M.

    2006-01-01

    Hydrogenated amorphous silicon (a-Si:H) is a widely used thin film semiconductor material which is still incompletely understood. It is generally assumed to form a continuous random network, with a high concentration of coordination defects (dangling bonds), which are hydrogen terminated. Neither the exact nature of these sites nor the degree of medium range order has been fully determined. In this paper, we present the first results for the local structure, from a combined study using angular correlation of positron annihilation radiation (ACAR) and synchrotron radiation diffraction. Reciprocal space information is obtained directly, for the mesoscale structure and the local defect structure, from the orientation dependent diffraction and 2D-ACAR patterns, respectively. Furthermore, inversion of both patterns yields a comparison of real space information through maps of the silicon-silicon pair correlation function and the electron-positron autocorrelation function B 2γ (r). From this information, it is possible to identify the dominant structural defect as a vacancy-size dangling bond cluster, around which the network strain is fully relaxed

  2. Direct Growth of Graphene Films on 3D Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors.

    Science.gov (United States)

    Song, Xuefen; Sun, Tai; Yang, Jun; Yu, Leyong; Wei, Dacheng; Fang, Liang; Lu, Bin; Du, Chunlei; Wei, Dapeng

    2016-07-06

    Conformal graphene films have directly been synthesized on the surface of grating microstructured quartz substrates by a simple chemical vapor deposition process. The wonderful conformality and relatively high quality of the as-prepared graphene on the three-dimensional substrate have been verified by scanning electron microscopy and Raman spectra. This conformal graphene film possesses excellent electrical and optical properties with a sheet resistance of 80% (at 550 nm), which can be attached with a flat graphene film on a poly(dimethylsiloxane) substrate, and then could work as a pressure-sensitive sensor. This device possesses a high-pressure sensitivity of -6.524 kPa(-1) in a low-pressure range of 0-200 Pa. Meanwhile, this pressure-sensitive sensor exhibits super-reliability (≥5000 cycles) and an ultrafast response time (≤4 ms). Owing to these features, this pressure-sensitive sensor based on 3D conformal graphene is adequately introduced to test wind pressure, expressing higher accuracy and a lower background noise level than a market anemometer.

  3. Imperfectly geometric shapes of nanograting structures as solar absorbers with superior performance for solar cells.

    Science.gov (United States)

    Nguyen-Huu, Nghia; Cada, Michael; Pištora, Jaromír

    2014-03-10

    The expectation of perfectly geometric shapes of subwavelength grating (SWG) structures such as smoothness of sidewalls and sharp corners and nonexistence of grating defects is not realistic due to micro/nanofabrication processes. This work numerically investigates optical properties of an optimal solar absorber comprising a single-layered silicon (Si) SWG deposited on a finite Si substrate, with a careful consideration given to effects of various types of its imperfect geometry. The absorptance spectra of the solar absorber with different geometric shapes, namely, the grating with attached nanometer-sized features at the top and bottom of sidewalls and periodic defects within four and ten grating periods are investigated comprehensively. It is found that the grating with attached features at the bottom absorbs more energy than both the one at the top and the perfect grating. In addition, it is shown that the grating with defects in each fourth period exhibits the highest average absorptance (91%) compared with that of the grating having defects in each tenth period (89%), the grating with attached features (89%), and the perfect one (86%). Moreover, the results indicate that the absorptance spectrum of the imperfect structures is insensitive to angles of incidence. Furthermore, the absorptance enhancement is clearly demonstrated by computing magnetic field, energy density, and Poynting vector distributions. The results presented in this study prove that imperfect geometries of the nanograting structure display a higher absorptance than the perfect one, and provide such a practical guideline for nanofabrication capabilities necessary to be considered by structure designers.

  4. Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics study

    International Nuclear Information System (INIS)

    Stock, D. M.; Weber, B.; Gaertner, K.

    2000-01-01

    The relation between the bond defect, which is a topological defect, and structural transformations between crystalline and amorphous silicon, is studied by molecular-dynamics simulations. The investigation of 1-keV boron implantation into crystalline silicon proves that the bond defect can also be generated directly by collisional-induced bond switching in addition to its formation by incomplete recombination of primary defects. This supports the assumption that the bond defect may play an important role in the amorphization process of silicon by light ions. The analysis of the interface between (001) silicon and amorphous silicon shows that there are two typical defect configurations at the interface which result from two different orientations of the bond defect with respect to the interface. Thus the bond defect appears to be a characteristic structural feature of the interface. Moreover, annealing results indicate that the bond defect acts as a growth site for interface-mediated crystallization

  5. Examination of total cross section resonance structure of niobium and silicon in neutron transmission experiments

    Science.gov (United States)

    Andrianova, Olga; Lomakov, Gleb; Manturov, Gennady

    2017-09-01

    The neutron transmission experiments are one of the main sources of information about the neutron cross section resonance structure and effect in the self-shielding. Such kind of data for niobium and silicon nuclides in energy range 7 keV to 3 MeV can be obtained from low-resolution transmission measurements performed earlier in Russia (with samples of 0.027 to 0.871 atom/barn for niobium and 0.076 to 1.803 atom/barn for silicon). A significant calculation-to-experiment discrepancy in energy range 100 to 600 keV and 300 to 800 keV for niobium and silicon, respectively, obtained using the evaluated nuclear data library ROSFOND, were found. The EVPAR code was used for estimation the average resonance parameters in energy range 7 to 600 keV for niobium. For silicon a stochastic optimization method was used to modify the resolved resonance parameters in energy range 300 to 800 keV. The improved ROSFOND evaluated nuclear data files were tested in calculation of ICSBEP integral benchmark experiments.

  6. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Science.gov (United States)

    Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  7. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria)], E-mail: dragicevic@oeaw.ac.at; Frey, M. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Grabiec, P.; Grodner, M. [Institute of Electron Technology (ITE), Warsaw (Poland); Haensel, S. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Hartmann, F.; Hoffmann, K.-H. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Hrubec, J.; Krammer, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Kucharski, K. [Institute of Electron Technology (ITE), Warsaw (Poland); Macchiolo, A. [Max-Planck-Institut fuer Physik (MPI), Munich (Germany); Marczewski, J. [Institute of Electron Technology (ITE), Warsaw (Poland)

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  8. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    International Nuclear Information System (INIS)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-01-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  9. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  10. Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

    International Nuclear Information System (INIS)

    Emelchenko, G.A.; Zhokhov, A.A.; Masalov, V.M.; Kudrenko, E.A.; Tereshenko, A.N.; Steinman, E.A.; Khodos, I.I.; Zinenko, V.I.; Agafonov, Yu.A.

    2011-01-01

    Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

  11. Evolution of single-particle structure of silicon isotopes

    Science.gov (United States)

    Bespalova, O. V.; Fedorov, N. A.; Klimochkina, A. A.; Markova, M. L.; Spasskaya, T. I.; Tretyakova, T. Yu.

    2018-01-01

    New data on proton and neutron single-particle energies E_{nlj} of Si isotopes with neutron number N from 12 to 28 as well as occupation probabilities N_{nlj} of single-particle states of stable isotopes 28, 30Si near the Fermi energy were obtained by the joint evaluation of the stripping and pick-up reaction data and excited state decay schemes of neighboring nuclei. The evaluated data indicate the following features of single-particle structure evolution: persistence of Z = 14 subshell closure with N increase, the new magicity of the number N = 16, and the conservation of the magic properties of the number N = 20 in Si isotopic chain. The features were described by the dispersive optical model. The calculation also predicts the weakening of N = 28 shell closure and demonstrates evolution of a bubble-like structure of the proton density distributions in neutron-rich Si isotopes.

  12. Evolution of single-particle structure of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Bespalova, O.V.; Klimochkina, A.A.; Spasskaya, T.I.; Tretyakova, T.Yu. [Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow (Russian Federation); Fedorov, N.A.; Markova, M.L. [Lomonosov Moscow State University, Faculty of Physics, Moscow (Russian Federation)

    2018-01-15

    New data on proton and neutron single-particle energies E{sub nlj} of Si isotopes with neutron number N from 12 to 28 as well as occupation probabilities N{sub nlj} of single-particle states of stable isotopes {sup 28,30}Si near the Fermi energy were obtained by the joint evaluation of the stripping and pick-up reaction data and excited state decay schemes of neighboring nuclei. The evaluated data indicate the following features of single-particle structure evolution: persistence of Z = 14 subshell closure with N increase, the new magicity of the number N = 16, and the conservation of the magic properties of the number N = 20 in Si isotopic chain. The features were described by the dispersive optical model. The calculation also predicts the weakening of N = 28 shell closure and demonstrates evolution of a bubble-like structure of the proton density distributions in neutron-rich Si isotopes. (orig.)

  13. Structural and electronic properties of hydrosilylated silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baumer, A.

    2005-11-15

    The structural and electronic properties of alkyl-terminated Si surfaces prepared by thermallyinduced hydrosilylation have been studied in detail in the preceding chapters. Various surfaces have been used for the functionalization ranging from crystalline Si over amorphous hydrogenated Si to nanoscaled materials such as Si nanowires and nanoparticles. In each case, the alkyl-terminated surfaces have been compared to the native oxidized and H-terminated surfaces. (orig.)

  14. Fine defective structure of silicon carbide powders obtained from different starting materials

    Directory of Open Access Journals (Sweden)

    Tomila T.V.

    2006-01-01

    Full Text Available The fine defective structure of silicon carbide powders obtained from silicic acid-saccharose, aerosil-saccharose, aerosil-carbon black, and hydrated cellulose-silicic acid gel systems was investigated. The relation between IR absorption characteristics and the microstructure of SiC particles obtained from different starting materials was established. The numerical relationship between the lattice parameter a and the frequency νTO is presented.

  15. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

    Energy Technology Data Exchange (ETDEWEB)

    Galperin, V. A.; Kitsyuk, E. P. [“Technological Center” Research-and-Production Company (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation); Shamanaev, A. A., E-mail: artemiy.shamanaev@tcen.ru [“Technological Center” Research-and-Production Company (Russian Federation)

    2015-12-15

    New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.

  16. Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Car, R.; Parrinello, M.

    1988-01-18

    An amorphous silicon structure is obtained with a computer simulation based on a new molecular-dynamics technique in which the interatomic potential is derived from a parameter-free quantum mechanical method. Our results for the atomic structure, the phonon spectrum, and the electronic properties are in excellent agreement with experiment. In addition we study details of the microscopic dynamics which are not directly accessible to experiment. We find in particular that structural defects are associated with weak bonds. These may give rise to low-frequency vibrational modes.

  17. Effect of aperiodicity on the broadband reflection of silicon nanorod structures for photovoltaics.

    Science.gov (United States)

    Lin, Chenxi; Huang, Ningfeng; Povinelli, Michelle L

    2012-01-02

    We carry out a systematic numerical study of the effects of aperiodicity on silicon nanorod anti-reflection structures. We use the scattering matrix method to calculate the average reflection loss over the solar spectrum for periodic and aperiodic arrangements of nanorods. We find that aperiodicity can either improve or deteriorate the anti-reflection performance, depending on the nanorod diameter. We use a guided random-walk algorithm to design optimal aperiodic structures that exhibit lower reflection loss than both optimal periodic and random aperiodic structures.

  18. Electronic structure of divacancy-hydrogen complexes in silicon

    International Nuclear Information System (INIS)

    Coutinho, J; Torres, V J B; Jones, R; Oeberg, S; Briddon, P R

    2003-01-01

    Divacancy-hydrogen complexes (V 2 H and V 2 H 2 ) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V 2 H 2 is an acceptor, whereas V 2 H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments

  19. Characterization of the Electronic Structure of Silicon Nanoparticles Using X-ray Absorption and Emission

    Energy Technology Data Exchange (ETDEWEB)

    Vaverka, April Susan Montoya [Univ.of California, Davis, CA (United States)

    2008-01-01

    Resolving open questions regarding transport in nanostructures can have a huge impact on a broad range of future technologies such as light harvesting for energy. Silicon has potential to be used in many of these applications. Understanding how the band edges of nanostructures move as a function of size, surface termination and assembly is of fundamental importance in understanding the transport properties of these materials. In this thesis work I have investigated the change in the electronic structure of silicon nanoparticle assemblies as the surface termination is changed. Nanoparticles are synthesized using a thermal evaporation technique and sizes are determined using atomic force microscopy (AFM). By passivating the particles with molecules containing alcohol groups we are able to modify the size dependent band edge shifts. Both the valence and conduction bands are measured using synchrotron based x-ray absorption spectroscopy (XAS) and soft x-ray fluorescence (SXF) techniques. Particles synthesized via recrystallization of amorphous silicon/SiO2 multilayers of thicknesses below 10 nm are also investigated using the synchrotron techniques. These samples also show quantum confinement effects but the electronic structure is different from those synthesized via evaporation methods. The total bandgap is determined for all samples measured. The origins of these differences in the electronic structures are discussed.

  20. Polymorphism in Elemental Silicon: Probabilistic Interpretation of the Realizability of Metastable Structures

    Energy Technology Data Exchange (ETDEWEB)

    Stevanovic, Vladan [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jones, Eric [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-11-03

    With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those that have been experimentally realized as metastable at ambient conditions. We put forward an explanation for this disparity wherein the likelihood of formation of a given polymorph under near-equilibrium conditions can be estimated on the basis of mean-field isothermal-isobaric (N,p,T) ensemble statistics. The probability that a polymorph will be experimentally realized is shown to depend upon both the hypervolume of that structure's potential energy basin of attraction and a Boltzmann factor weight containing the polymorph's potential enthalpy per particle. Both attributes are calculated using density functional theory relaxations of randomly generated initial structures. We find that the metastable polymorphism displayed by silicon can be accounted for using this framework to the exclusion of a very large number of other low-energy structures.

  1. Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

    Science.gov (United States)

    Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

    2017-08-01

    Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

  2. Tunable Resonant-Cavity-Enhanced Photodetector with Double High-Index-Contrast Grating Mirrors

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Yvind, Kresten; Chung, Il-Sug

    2013-01-01

    In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists....... Furthermore, the fact that it can be fabricated on a silicon platform offers us a possibility of integration with electronics.......In this paper, we propose a broadband-tunable resonant-cavity-enhanced photodetector (RCE-PD) structure with double high-index-contrast grating (HCG) mirrors and numerically investigate its characteristics. The detector is designed to operate at 1550-nm wavelength. The detector structure consists...... of a top InP HCG mirror, a p-i-n photodiode embedding multiple quantum wells, and a Si HCG mirror formed in the Si layer of a silicon-on-insulator wafer. The detection wavelength can be changed by moving the top InP HCG mirror suspended in the air. High reflectivity and small penetration length of HCGs...

  3. On the determining role of network structure titania in silicone against bacterial colonization: Mechanism and disruption of biofilm

    International Nuclear Information System (INIS)

    Depan, D.; Misra, R.D.K.

    2014-01-01

    Silicone-based biomedical devices are prone to microbial adhesion, which is the primary cause of concern in the functioning of the artificial device. Silicone exhibiting long-term and effective antibacterial ability is highly desirable to prevent implant related infections. In this regard, nanophase titania was incorporated in silicone as an integral part of the silicone network structure through cross-link mechanism, with the objective to reduce bacterial adhesion to a minimum. The bacterial adhesion was studied using crystal violet assay, while the mechanism of inhibition of biofilm formation was studied via electron microscopy. The incorporation of nanophase titania in silicone dramatically reduced the viability of Staphylococcus aureus (S. aureus) and the capability to adhere on the surface of hybrid silicone by ∼ 93% in relation to stand alone silicone. The conclusion of dramatic reduction in the viability of S. aureus is corroborated by different experimental approaches including biofilm inhibition assay, zone of inhibition, and through a novel experiment that involved incubation of biofilm with titania nanoparticles. It is proposed that the mechanism of disruption of bacterial film in the presence of titania involves puncturing of the bacterial cell membrane. - Highlights: • Network structure titania in silicone imparts antimicrobial activity. • Ability to microbial adhesion is significantly reduced. • Antimicrobial mechanism involves rupture of biofilm

  4. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    International Nuclear Information System (INIS)

    Bernier, Nicolas; Xhoffer, Chris; Van De Putte, Tom; Galceran, Montserrat; Godet, Stéphane

    2013-01-01

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn 2+ and Mn 3+ are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN) x (SiMn 0.25 N y O z ) 1−x with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn 2+ and Mn 3+ . • Oxygen

  5. Spherical grating spectrometers

    Science.gov (United States)

    O'Donoghue, Darragh; Clemens, J. Christopher

    2014-07-01

    We describe designs for spectrometers employing convex dispersers. The Offner spectrometer was the first such instrument; it has almost exclusively been employed on satellite platforms, and has had little impact on ground-based instruments. We have learned how to fabricate curved Volume Phase Holographic (VPH) gratings and, in contrast to the planar gratings of traditional spectrometers, describe how such devices can be used in optical/infrared spectrometers designed specifically for curved diffraction gratings. Volume Phase Holographic gratings are highly efficient compared to conventional surface relief gratings; they have become the disperser of choice in optical / NIR spectrometers. The advantage of spectrometers with curved VPH dispersers is the very small number of optical elements used (the simplest comprising a grating and a spherical mirror), as well as illumination of mirrors off axis, resulting in greater efficiency and reduction in size. We describe a "Half Offner" spectrometer, an even simpler version of the Offner spectrometer. We present an entirely novel design, the Spherical Transmission Grating Spectrometer (STGS), and discuss exemplary applications, including a design for a double-beam spectrometer without any requirement for a dichroic. This paradigm change in spectrometer design offers an alternative to all-refractive astronomical spectrometer designs, using expensive, fragile lens elements fabricated from CaF2 or even more exotic materials. The unobscured mirror layout avoids a major drawback of the previous generation of catadioptric spectrometer designs. We describe laboratory measurements of the efficiency and image quality of a curved VPH grating in a STGS design, demonstrating, simultaneously, efficiency comparable to planar VPH gratings along with good image quality. The stage is now set for construction of a prototype instrument with impressive performance.

  6. Ordered supramolecular oligothiophene structures on passivated silicon surfaces

    Science.gov (United States)

    Liu, Renjie

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  7. Influence of silicon on local structure and morphology of γ-FeOOH and α-FeOOH particles

    International Nuclear Information System (INIS)

    Kwon, Sang-Koo; Shinoda, Kozo; Suzuki, Shigeru; Waseda, Yoshio

    2007-01-01

    The extended X-ray absorption fine structure (EXAFS) method was used for investigating the local structures of lepidocrocite and goethite with and without silicon. The structure and morphology of these particles were investigated using X-ray diffraction and transmission electron microscopy, respectively. The bonding structure was examined by Fourier transform infrared spectroscopy (FT-IR). When silicon species was added, the structure and morphology changed while the linkage of FeO 6 octahedral units was distorted. The FT-IR spectra revealed the formation of the Fe-O-Si bond in particles containing silicate ions, and the characteristic bond affects the local structure and morphology of the particles

  8. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

  9. Hybrid grating reflectors: Origin of ultrabroad stopband

    Energy Technology Data Exchange (ETDEWEB)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug, E-mail: ilch@fotonik.dtu.dk [DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark)

    2016-04-04

    Hybrid grating (HG) reflectors with a high-refractive-index cap layer added onto a high contrast grating (HCG) provide a high reflectance close to 100% over a broader wavelength range than HCGs. The combination of a cap layer and a grating layer brings a strong Fabry-Perot (FP) resonance as well as a weak guided mode (GM) resonance. Most of the reflected power results from the FP resonance, while the GM resonance plays a key role in achieving a reflectance close to 100% as well as broadening the stopband. An HG sample with 7 InGaAlAs quantum wells included in the cap layer has been fabricated by directly wafer-bonding a III-V cap layer onto a Si grating layer. Its reflection property has been characterized. This heterogeneously integrated HG reflector may allow for a hybrid III-V on Si laser to be thermally efficient, which has promising prospects for silicon photonics light sources and high-speed operation.

  10. Structural defects in monocrystalline silicon: from radiation ones to growing and technological

    International Nuclear Information System (INIS)

    Gerasimenko, N.N.; Pavlyuchenko, M.N.; Dzhamanbalin, K.K.

    2001-01-01

    The systematical review of properties and conditions of radiation structures in monocrystalline silicon including own defects (elementary and complex, disordered fields) as well as defect-impurity formations is presented. The most typical examples of principle effects influence of known defects on radiation-induced processes (phase transformations, diffusion and heteration and others are considered. Experimental facts and models of silicon radiation amorphization have been analyzed in comparison of state of the radiation amorphization radiation problem of metals and alloys. The up-to-date status of the problem of the radiation defects physics are discussed, including end-of-range -, n+-, rod-like- defects. The phenomenon self-organization in crystals with defects has been considered. The examples of directed using radiation defects merged in independent trend - defects engineering - are given

  11. Symmetry and structure of N-O shallow donor complexes in silicon

    International Nuclear Information System (INIS)

    Alt, H.Ch.; Wagner, H.E.

    2012-01-01

    Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

  12. Investigation on the structural characterization of pulsed p-type porous silicon

    Science.gov (United States)

    Wahab, N. H. Abd; Rahim, A. F. Abd; Mahmood, A.; Yusof, Y.

    2017-08-01

    P-type Porous silicon (PS) was sucessfully formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The PS was etched in the Hydrofluoric (HF) based solution at a current density of J = 10 mA/cm2 for 30 minutes from a crystalline silicon wafer with (100) orientation. For the PC process, the current was supplied through a pulse generator with 14 ms cycle time (T) with 10 ms on time (Ton) and pause time (Toff) of 4 ms respectively. FESEM, EDX, AFM, and XRD have been used to characterize the morphological properties of the PS. FESEM images showed that pulse PS (PPC) sample produces more uniform circular structures with estimated average pore sizes of 42.14 nm compared to DC porous (PDC) sample with estimated average size of 16.37nm respectively. The EDX spectrum for both samples showed higher Si content with minimal presence of oxide.

  13. Quantum confinement effect in cheese like silicon nano structure fabricated by metal induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Shailendra K., E-mail: phd1211512@iiti.ac.in; Sahu, Gayatri; Sagdeo, Pankaj R.; Kumar, Rajesh [Material Research Laboratory, Discipline of Physics & MSEG, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)

    2015-08-28

    Quantum confinement effect has been studied in cheese like silicon nano-structures (Ch-SiNS) fabricated by metal induced chemical etching using different etching times. Scanning electron microscopy is used for the morphological study of these Ch-SiNS. A visible photoluminescence (PL) emission is observed from the samples under UV excitation at room temperature due to quantum confinement effect. The average size of Silicon Nanostructures (SiNS) present in the samples has been estimated by bond polarizability model using Raman Spectroscopy from the red-shift observed from SiNSs as compared to its bulk counterpart. The sizes of SiNS present in the samples decreases as etching time increase from 45 to 75 mintunes.

  14. Magnetic structure of cross-shaped permalloy arrays embedded in silicon wafers

    International Nuclear Information System (INIS)

    Machida, Kenji; Tezuka, Tomoyuki; Yamamoto, Takahiro; Ishibashi, Takayuki; Morishita, Yoshitaka; Koukitu, Akinori; Sato, Katsuaki

    2005-01-01

    This paper describes the observed magnetic structure and the micromagnetic simulation of cross-shaped, permalloy (Ni 80 Fe 20 ) arrays embedded in silicon wafers. The nano-scale-width, cross-shaped patterns were fabricated using the damascene technique, electron beam lithography, and chemical mechanical polishing. The magnetic poles were observed as two pairs of bright and dark spots at the ends of the crossed-bars using a magnetic force microscope. The force gradient distributions were simulated based on micromagnetic calculations and tip's stray field calculations using the integral equation method. This process of calculation successfully explains the appearance of the poles and complicated spin structure at the crossing region

  15. Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

    CERN Document Server

    Saveliev, V

    2000-01-01

    The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

  16. Polarization-Independent Wideband High-Index-Contrast Grating Mirror

    DEFF Research Database (Denmark)

    Bekele, Dagmawi Alemayehu; Park, Gyeong Cheol; Malureanu, Radu

    2015-01-01

    Island-type two-dimensional high-index-contrast grating mirror based on a standard silicon-on-insulator wafer have been experimentally demonstrated. The measured spectra shows a bandwidth of ∼192 nm with a reflectivity over 99% as well as polarization independence. Numerical simulations show...

  17. Response of fiber Bragg gratings to longitudinal ultrasonic waves.

    Science.gov (United States)

    Minardo, Aldo; Cusano, Andrea; Bernini, Romeo; Zeni, Luigi; Giordano, Michele

    2005-02-01

    In the last years, fiber optic sensors have been widely exploited for several sensing applications, including static and dynamic strain measurements up to acoustic detection. Among these, fiber Bragg grating sensors have been indicated as the ideal candidate for practical structural health monitoring in light of their unique advantages over conventional sensing devices. Although this class of sensors has been successfully tested for static and low-frequency measurements, the identification of sensor performances for high-frequency detection, including acoustic emission and ultrasonic investigations, is required. To this aim, the analysis of feasibilty on the use of fiber Bragg grating sensors as ultrasonic detectors has been carried out. In particular, the response of fiber Bragg gratings subjected to the longitudinal ultrasonic (US) field has been theoretically and numerically investigated. Ultrasonic field interaction has been modeled, taking into account the direct deformation of the grating pitch combined with changes in local refractive index due to the elasto-optic effect. Numerical results, obtained for both uniform and Gaussian-apodized fiber Bragg gratings, show that the grating spectrum is strongly influenced by the US field in terms of shape and central wavelength. In particular, a key parameter affecting the grating response is the ratio between the US wavelength and the grating length. Normal operation characterized by changes in wavelength of undistorted Bragg peak is possible only for US wavelengths longer than the grating length. For US wavelengths approaching the grating length, the wavelength change is accompanied by subpeaks formation and main peak amplitude modulation. This effect can be attributed to the nonuniformity of the US perturbation along the grating length. At very high US frequencies, the grating is not sensitive any longer. The results of this analysis provide useful tools for the design of grating-based ultrasound sensors for

  18. Fast tunable blazed MEMS grating for external cavity lasers

    Science.gov (United States)

    Tormen, Maurizio; Niedermann, Philippe; Hoogerwerf, Arno; Shea, Herbert; Stanley, Ross

    2017-11-01

    Diffractive MEMS are interesting for a wide range of applications, including displays, scanners or switching elements. Their advantages are compactness, potentially high actuation speed and in the ability to deflect light at large angles. We have designed and fabricated deformable diffractive MEMS grating to be used as tuning elements for external cavity lasers. The resulting device is compact, has wide tunability and a high operating speed. The initial design is a planar grating where the beams are free-standing and attached to each other using leaf springs. Actuation is achieved through two electrostatic comb drives at either end of the grating. To prevent deformation of the free-standing grating, the device is 10 μm thick made from a Silicon on Insulator (SOI) wafer in a single mask process. At 100V a periodicity tuning of 3% has been measured. The first resonant mode of the grating is measured at 13.8 kHz, allowing high speed actuation. This combination of wide tunability and high operating speed represents state of the art in the domain of tunable MEMS filters. In order to improve diffraction efficiency and to expand the usable wavelength range, a blazed version of the deformable MEMS grating has been designed. A key issue is maintaining the mechanical properties of the original device while providing optically smooth blazed beams. Using a process based on anisotropic KOH etching, blazed gratings have been obtained and preliminary characterization is promising.

  19. Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

    International Nuclear Information System (INIS)

    Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

    2013-01-01

    An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

  20. Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

    2014-09-01

    The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

  1. Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

    Science.gov (United States)

    Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

    2008-04-01

    Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

  2. Micromagnetic and structural investigations on a ferromagnetic nanocomposite system in porous silicon

    International Nuclear Information System (INIS)

    Granitzer, P.; Rumpf, K.; Krenn, H.; Poelt, P.; Reichmann, A.

    2005-01-01

    Full text: Ni-nanowires, perpendicularly embedded to the surface of a Si-template are fabricated in a low-cost, only two-step electrochemical process. In the first step mesoporous silicon with highly oriented pores is produced. The electrochemical parameters for this procedure have to be chosen in a very small regime. This sKEXleton with a homogeneous spatial distribution of the pores is filled with a ferromagnetic material in a second electrochemical step. The selforganized nanowire array is characterized structurally by SEM and EDXS as well as magnetically by SQUID-magnetometry. Magnetization measurements are used to generate a model for the Ni-loading in the channels. Not only wires with diameters smaller than the Bloch-wall thickness and a length between 10 μm and 30 μm are present but also particles in the size up to 200 nm are existent. This nanocomposite system shows a peculiar two-fold magnetic switching characteristic. The first switching is in the low field regime (∼ 500 Oe) and the second one at high fields of a few Tesla. The magnetization reversal is treated in terms of an analytic formulation. The second switching field which occurs as breakdown of the magnetization can be influenced by temperature control and different loading conditions. This promising nanocomposite system is not only interesting in basic research but gives rise to a lot of silicon based applications liKEX magnetic field sensors. Due to rather long spin-relaxation in silicon the needles could be used for spin-injection into c-silicon and therefore it is also an interesting system for spintronics. (author)

  3. Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

    Science.gov (United States)

    Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

    2018-05-01

    We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

  4. Development of nano-structured silicon carbide ceramics: from synthesis of the powder to sintered ceramics

    International Nuclear Information System (INIS)

    Reau, A.

    2008-12-01

    The materials used inside future nuclear reactors will be subjected to very high temperature and neutrons flux. Silicon carbide, in the form of SiC f /SiC nano-structured composite is potentially interesting for this type of application. It is again necessary to verify the contribution of nano-structure on the behaviour of this material under irradiation. To verify the feasibility and determine the properties of the matrix, it was envisaged to produce it by powder metallurgy from SiC nanoparticles. The objective is to obtain a fully dense nano-structured SiC ceramic without additives. For that, a parametric study of the phases of synthesis and agglomeration was carried out, the objective of which is to determine the active mechanisms and the influence of the key parameters. Thus, studying the nano-powder synthesis by laser pyrolysis allowed to produce, with high production rates, homogeneous batches of SiC nanoparticles whose size can be adjusted between 15 and 90 nm. These powders have been densified by an innovating method: Spark Plasma Sintering (SPS). The study and the optimization of the key parameters allowed the densification of silicon carbide ceramic without sintering aids while preserving the nano-structure of material. The thermal and mechanical properties of final materials were studied in order to determine the influence of the microstructure on their properties. (author)

  5. Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses

    International Nuclear Information System (INIS)

    Radu, C.; Simion, S.; Zamfirescu, M.; Ulmeanu, M.; Enculescu, M.; Radoiu, M.

    2011-01-01

    The aim of this study is to investigate the micrometer and submicrometer scale structuring of silicon by liquid chlorine and fluorine precursors with 200 fs laser pulses working at both fundamental (775 nm) and frequency doubled (387 nm) wavelengths. The silicon surface was irradiated at normal incidence by immersing the Si (111) substrates in a glass container filled with liquid chlorine (CCl 4 ) and fluorine (C 2 Cl 3 F 3 ) precursors. We report that silicon surfaces develop an array of spikes with single step irradiation processes at 775 nm and equally at 387 nm. When irradiating the Si surface with 400 pulses at 330 mJ/cm 2 laser fluence and a 775 nm wavelength, the average height of the formed Si spikes in the case of fluorine precursors is 4.2 μm, with a full width at half maximum of 890 nm. At the same irradiation wavelength chlorine precursors develop Si spikes 4 μm in height and with a full width at half maximum of 2.3 μm with irradiation of 700 pulses at 560 mJ/cm 2 laser fluence. Well ordered areas of submicrometer spikes with an average height of about 500 nm and a width of 300 nm have been created by irradiation at 387 nm by chlorine precursors, whereas the fluorine precursors fabricate spikes with an average height of 700 nm and a width of about 200 nm. Atomic force microscopy and scanning electron microscopy of the surface show that the formation of the micrometer and sub-micrometer spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon, at both 775 nm and 387 nm wavelength irradiation. The energy-dispersive x-ray measurements indicate the presence of chlorine and fluorine precursors on the structured surface. The fluorine precursors create a more ordered area of Si spikes at both micrometer and sub-micrometer scales. The potential use of patterned Si substrates with gradient topography as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology on cell

  6. Characterization and TCAD modelling of termination structures for silicon radiation detectors

    International Nuclear Information System (INIS)

    Dittongo, S.; Boscardin, M.; Bosisio, L.; Ciacchi, M.; Dalla Betta, G.-F.; Gregori, P.; Piemonte, C.; Rachevskaia, I.; Ronchin, S.; Zorzi, N.

    2004-01-01

    We have recently proposed a novel junction termination structure for silicon radiation detectors, featuring all-p-type multiguard and scribe-line implants, with metal field-plates completely covering the gap between the implanted rings. The structure is intended for detector long-term stability enhancement even in adverse ambient conditions and for fabrication-process simplification. A thorough static characterization, including stability measurements in varying humidity conditions, has been carried out on a variety of samples fabricated at ITC-irst. Comparisons with diodes featuring an n-type implant along the border - or no edge structure at all - have been performed. The new structures show stable behaviour at relatively high bias (∼200 V), also in the presence of wide humidity changes (1-90%). A good qualitative agreement has been obtained between experimental results and simulation predictions, allowing to gain deep insight into the physical behaviour of the device

  7. Disorder Improves Light Absorption in Thin Film Silicon Solar Cells with Hybrid Light Trapping Structure

    Directory of Open Access Journals (Sweden)

    Yanpeng Shi

    2016-01-01

    Full Text Available We present a systematic simulation study on the impact of disorder in thin film silicon solar cells with hybrid light trapping structure. For the periodical structures introducing certain randomness in some parameters, the nanophotonic light trapping effect is demonstrated to be superior to their periodic counterparts. The nanophotonic light trapping effect can be associated with the increased modes induced by the structural disorders. Our study is a systematic proof that certain disorder is conceptually an advantage for nanophotonic light trapping concepts in thin film solar cells. The result is relevant to the large field of research on nanophotonic light trapping which currently investigates and prototypes a number of new concepts including disordered periodic and quasiperiodic textures. The random effect on the shape of the pattern (position, height, and radius investigated in this paper could be a good approach to estimate the influence of experimental inaccuracies for periodic or quasi-periodic structures.

  8. Surface plasmon effects in the absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures.

    Science.gov (United States)

    Lin, Hung-Yu; Kuo, Yang; Liao, Cheng-Yuan; Yang, C C; Kiang, Yean-Woei

    2012-01-02

    The authors numerically investigate the absorption enhancement of an amorphous Si solar cell, in which a periodical one-dimensional nanowall or two-dimensional nanopillar structure of the Ag back-reflector is fabricated such that a dome-shaped grating geometry is formed after Si deposition and indium-tin-oxide coating. In this investigation, the effects of surface plasmon (SP) interaction in such a metal nanostructure are of major concern. Absorption enhancement in most of the solar spectral range of significant amorphous Si absorption (320-800 nm) is observed in a grating solar cell. In the short-wavelength range of high amorphous Si absorption, the weakly wavelength-dependent absorption enhancement is mainly caused by the broadband anti-reflection effect, which is produced through the surface nano-grating structures. In the long-wavelength range of diminishing amorphous Si absorption, the highly wavelength-sensitive absorption enhancement is mainly caused by Fabry-Perot resonance and SP interaction. The SP interaction includes the contributions of surface plasmon polariton and localized surface plasmon.

  9. Improvement of insertion loss and quality factor of flexural plate-wave-based alpha-fetoprotein biosensor using groove-type reflective grating structures

    Science.gov (United States)

    Lin, Chang-Yu; Huang, I.-Yu; Lan, Je-Wei

    2013-01-01

    Conventional flexural plate-wave (FPW) transducers have limited applications in biomedical sensing due to their disadvantages such as high insertion loss and low quality factor. To overcome these shortcomings, we propose a FPW transducer on a low phase velocity insulator membrane (5-μm-thick SiO2) with a novel groove-type reflective grating structure design. Additionally, a cystamine self-assembly monolayer and a glutaraldehyde cross-linking layer are implemented on the backside of the FPW device to immobilize alpha-fetoprotein (AFP) antibody. A FPW-based AFP biosensor with low detection limit (5 ng/mL) can be achieved and used to measure the extreme low concentration of AFP antigen in human serum for early detection of hepatocellular carcinoma. The proposed FPW-based AFP biosensor also demonstrates a very high quality factor (206), low insertion loss (-40.854 dB), low operating frequency (6.388 MHz), and high sensing linearity (90.7%).

  10. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    International Nuclear Information System (INIS)

    Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-01-01

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  11. Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

    2017-03-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  12. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  13. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  14. Effect of black silicon disordered structures distribution on its wideband reduced reflectance

    International Nuclear Information System (INIS)

    Saab, D Abi; Mostarshedi, S; Basset, P; Protat, S; Angelescu, D; Richalot, E

    2014-01-01

    We present a simple and accurate model for the reflectance simulation of black silicon (BSi) based on the finite element method (FEM). Normalized-root-mean-square error (NRMSE) with experimental measurements below 0.25% has been obtained for wavelength range between 450 and 950 nm. The model is made of a four basic shape cell whose dimensions are extracted from an accurate topography of the BSi obtained by FIB-SEM tomography. Additional BSi modelling techniques were studied, which take into account the BSi irregular topography, demonstrating an important influence of the local structure height variation in the BSi surface spectral reflectance. (paper)

  15. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

    International Nuclear Information System (INIS)

    Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

    2015-01-01

    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al 2 O 3 and TiO 2 processes from Me 3 Al/H 2 O and TiCl 4 /H 2 O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes

  16. Acousto-defect interaction in irradiated and non-irradiated silicon n+-p structures

    Science.gov (United States)

    Olikh, O. Ya.; Gorb, A. M.; Chupryna, R. G.; Pristay-Fenenkov, O. V.

    2018-04-01

    The influence of ultrasound on current-voltage characteristics of non-irradiated silicon n+-p structures as well as silicon structures exposed to reactor neutrons or 60Co gamma radiation has been investigated experimentally. It has been found that the ultrasound loading of the n+-p structure leads to the reversible change of shunt resistance, carrier lifetime, and ideality factor. Specifically, considerable acoustically induced alteration of the ideality factor and the space charge region lifetime was observed in the irradiated samples. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations. It has been shown that divacancies and vacancy-interstitial oxygen pairs are effectively modified by ultrasound in contrast to interstitial carbon-interstitial oxygen complexes.

  17. Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Roczen, Maurizio; Malguth, Enno; Barthel, Thomas; Gref, Orman; Toefflinger, Jan A.; Schoepke, Andreas; Schmidt, Manfred; Ruske, Florian; Korte, Lars; Rech, Bernd [Institute for Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Berlin (Germany); Schade, Martin; Leipner, Hartmut S. [Martin-Luther-Universitaet Halle-Wittenberg, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Halle (Germany); Callsen, Gordon; Hoffmann, Axel [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Berlin (Germany); Phillips, Matthew R. [University of Technology Sydney, Department of Physics and Advanced Materials, NSW (Australia)

    2012-09-15

    The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm) oxidized (111) surface of Si wafers by electron beam evaporation under ultrahigh vacuum conditions. The solid phase crystallization of the initial layer is induced by a subsequent in situ annealing step at 700 C, which leads to the dewetting of the initial a-Si layer. This process results in the self-organized formation of highly crystalline Si nanodot islands. Scanning electron microscopy confirms that size, shape, and planar distribution of the nanodots depend on the thickness of the initial a-Si layer. Cross-sectional investigations reveal a single-crystalline structure of the nanodots. This characteristic is observed as long as the thickness of the initial a-Si layer remains under a certain threshold triggering coalescence. The underlying ultra-thin oxide is not structurally affected by the dewetting process. Furthermore, a method for the fabrication of close-packed stacks of nanodots is presented, in which each nanodot is covered by a 2 nm thick SiO{sub 2} shell. The chemical composition of these ensembles exhibits an abrupt Si/SiO{sub 2} interface with a low amount of suboxides. A minority charge carrier lifetime of 18 {mu}s inside of the nanodots is determined. (orig.)

  18. UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

    International Nuclear Information System (INIS)

    Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

    2006-01-01

    In this paper, we investigate the effect of UV irradiation on Vapor-Etching (VE) based Porous Silicon (PS) structure and luminescence under controlled atmosphere (N 2 , air, O 2 ). The oxidation evolution is monitored by Fourier transform infrared (FTIR) spectroscopy. FTIR measurements show that the SiH x bond, initially present in the freshly prepared PS layers, decreased progressively with UV irradiation time until they completely disappear. We found that this treatment accelerates the oxidation process. SiO x structures appear and gradually become dominant as regard to the SiH x species, while UV irradiation is in progress. Generally, the photoluminescence (PL) intensity of the PS layer decreases instantaneously at the starting by the UV excitation and stabilizes after a period depending on the ambient gas and the specific surface area of the porous structure. Further UV exposure leads to a linear decrease of the PL intensity due to change of surface passivation from SiH x to O y SiH x . After less than 100 min of UV irradiation, the PL intensity exhibits an exponential decay. UV exposure in air and O 2 leads approximately to the same PL behavior, although faster PL intensity decrease was observed under O 2 -rich ambient. This was explained as being due to intense hydrogen desorption in presence of oxygen. Correlations of PL results with FTIR measurements show that surface passivation determine the electronic states of silicon nano-crystallites and influence the photoluminescence efficiency

  19. Smith-Purcell radiation from concave dotted gratings

    Science.gov (United States)

    Sergeeva, D. Yu.; Tishchenko, A. A.; Aryshev, A. S.; Strikhanov, M. N.

    2018-02-01

    We present the first-principles theory of Smith-Purcell effect from the concave dotted grating consisting of bent chains of separated micro- or nanoparticles. The numerical analysis demonstrates that the obtained spectral-angular distributions change significantly depending on the structure of the grating.

  20. Design of compressors for FEL pulses using deformable gratings

    Science.gov (United States)

    Bonora, Stefano; Fabris, Nicola; Frassetto, Fabio; Giovine, Ennio; Miotti, Paolo; Quintavalla, Martino; Poletto, Luca

    2017-06-01

    We present the optical layout of soft X-rays compressors using reflective grating specifically designed to give both positive or negative group-delay dispersion (GDD). They are tailored for chirped-pulse-amplification experiments with FEL sources. The optical design originates from an existing compressor with plane gratings already realized and tested at FERMI, that has been demonstrated capable to introduce tunable negative GDD. Here, we discuss two novel designs for compressors using deformable gratings capable to give both negative and positive GDD. Two novel designs are discussed: 1) a design with two deformable gratings and an intermediate focus between the twos, that is demonstrated capable to introduce positive GDD; 2) a design with one deformable grating giving an intermediate focus, followed by a concave mirror and a plane grating, that is capable to give both positive and negative GDD depending on the distance between the second mirror and the second grating. Both the designs are tunable in wavelength and GDD, by acting on the deformable gratings, that are rotated to tune the wavelength and the GDD and deformed to introduce the radius required to keep the spectral focus. The deformable gratings have a laminar profile and are ruled on a thin silicon plane substrate. A piezoelectric actuator is glued on the back of the substrate and is actuated to give a radius of curvature that is varying from infinite (plane) to few meters. The ruling procedure, the piezoelectric actuator and the efficiency measurements in the soft X-rays will be presented. Some test cases are discussed for wavelengths shorter than 12 nm.

  1. Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

    International Nuclear Information System (INIS)

    Uchino, T; Gili, E; Ashburn, P; Tan, L; Buiu, O; Hall, S

    2012-01-01

    A vertical MOSFET (VMOST) incorporating an epitaxial channel and a drain junction in a stacked silicon-insulator structure is presented. In this device structure, an oxide layer near the drain junction edge (referred to as a junction stop) acts as a dopant diffusion barrier and consequently a shallow drain junction is formed to suppress short channel effects. To investigate the scalability of this device, a simulation study in the sub-100 nm regime calibrated to measured results on the fabricated devices is carried out. The use of an epitaxial channel delivers 50% higher drive current due to the higher mobility of the retrograde channel and the junction stop structure delivers improvements of threshold voltage roll-off and drain-induced barrier lowering compared with a conventional VMOST. (fast track communication)

  2. Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

    Energy Technology Data Exchange (ETDEWEB)

    Mabrook, M.F. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)], E-mail: m.f.mabrook@durham.ac.uk; Jombert, A.S. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Machin, S.E.; Pearson, C.; Kolb, D. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Coleman, K.S. [Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Zeze, D.A.; Petty, M.C. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

    2009-03-15

    We report on the electrical behaviour of metal-insulator-semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C{sub 60}, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C{sub 60}/SiO{sub 2}/Si structure between 4 and -4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

  3. Radiation damage of silicon structures with electrons of 900 MeV

    CERN Document Server

    Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

    2002-01-01

    We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

  4. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  5. Numerical study of the atomic and electronic structure of some silicon grain boundaries

    International Nuclear Information System (INIS)

    Torrent, M.

    1996-01-01

    This work contributes to the theoretical study of extended defects in covalent materials. The study is especially devoted to the tilt grain boundaries in silicon as a model material. The theoretical model is based on the self-consistent tight-binding approximation and is applied within two numerical techniques: the fast 'order N' density-matrix method and the diagonalization technique which allows the sampling of the reciprocal space. Total energy parameters of the model have been fitted in order to reproduce the silicon band structure (with a correct gap value) and the transferability of crystalline and mechanical properties of this material. A new type of boundary conditions is proposed and tested. These conditions, named 'ante-periodic' or 'Moebius', allow only one grain boundary per box instead of two and decrease the CPU time by a factor of two. The model is then applied to the study of the Σ=25 [001] (710) grain boundary. The results show the possible presence in this boundary of low energy non-reconstructed atomic structures which are electrically active. This confirms what had been suggested by some experimental observations. The same study is also performed for the Σ=13 [001] (510) grain boundary. In order to compare the intrinsic electrical activity in the previous grain boundaries with the one induced by impurities, a total energy parametrization for the silicon-nickel bond is achieved and used in preliminary calculations. Finally the two variants of the Σ=11 [011] (2-33) interface are studied, especially their respective interfacial energies. The result disagrees with previous calculations using phenomenological potentials. (author)

  6. Modified MIS-structure based on nanoporous silicon with enhanced sensitivity to the hydrogen containing gases

    Energy Technology Data Exchange (ETDEWEB)

    Gorbanyuk, T.; Evtukh, A.; Litovchenko, V.; Solntsev, V. [Institute of Semiconductor Physics, Kiev (Ukraine)

    2008-07-01

    The gas sensitivity of metal-insulator-semiconductor (MIS)-structures based on nanoporous silicon with active electrodes from palladium/tungsten oxide composite has been studied. It was found that the using of palladium/tungsten oxide composite (instead of thin palladium film) leads to enhanced sensitivity of MIS structures to hydrogen sulphide in air. The mechanism of this phenomenon has been established. The enhanced H{sub 2}S sensitivity is explained in the following way. The microparticles of tungsten trioxide inside palladium matrix stimulate the dissociation of hydrogen sulphide molecules, and hydrogen atoms and/or protons flow down to palladium surface, are absorbed by palladium volume, diffuse to palladium/oxidized nanoporous silicon interface. Hydrogen atoms adsorbed at the interface are polarized and give rise to a dipole layer. As a result, the voltage shift of the capacity-voltage (C-V) curve proportional to the measured gas concentration is observed. The surface microstructure of Pd/WO{sub 3} composite was studied by AFM microscopy. The chemical content of the composite film has been investigated by SIMS. It was found that the composite film on nanoporous silicon surface poses the holes with the size about 0.05 {mu}m, the mean separation between tungsten oxide microparticles is 1-2 {mu}m. It also was found that the using of the additional double layer polymer film (polymer film (phthalocyanine zinc)/semicon-ductor film (cadmium sulphide)) on composite film surface leads to the additional enhancement of the gas sensitivity to hydrogen sulphide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Switchable Bragg gratings

    DEFF Research Database (Denmark)

    Marckmann, Carl Johan

    2003-01-01

    Research Center (MIC) at the Technical University of Denmark. The Bragg gratings were fabricated at COM using UV irradiation of the planar waveguides using the phase mask method. The induction of a frozen-in DC electric field into the samples was performed by thermal poling of the Bragg gratings...... layers, it becam possible to investigate the symmetry properties of the third-order nonlinearities. Contrary to the expectations for an amorphous material, the measurements indicated an almost polarization independent third-order nonlinearity - the most probable explanation being electrostriction......The subject of this ph.d. thesis was the development of an electrically switchable Bragg grating made in an optical waveguide using thermal poling to be applied within optical telecommunication systems. The planar waveguides used in this thesis were fabricated at the Micro- and Nanotechnology...

  8. Grateful Med: getting started.

    Science.gov (United States)

    Shearer, B; McCann, L; Crump, W J

    1990-01-01

    When a local medical library is not available, it is often necessary for physicians to discover alternate ways to receive medical information. Rural physicians, particularly, can make use of a computer program called Grateful Med that provides access to the same literature available to physicians in large cities. This program permits the user to perform database searches on the National Library of Medicine database (MEDLINE), corresponding to the primary index to medical literature, Index Medicus. In this article, we give the procedure for procuring a National Library of Medicine password and for making efficient use of the Grateful Med program.

  9. Novel fabrication techniques for low-mass composite structures in silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hartman, Neal, E-mail: neal.hartman@cern.ch; Silber, Joseph; Anderssen, Eric; Garcia-Sciveres, Maurice; Gilchriese, Murdock; Johnson, Thomas; Cepeda, Mario

    2013-12-21

    The structural design of silicon-based particle detectors is governed by competing demands of reducing mass while maximizing stability and accuracy. These demands can only be met by fiber reinforced composite laminates (CFRP). As detecting sensors and electronics become lower mass, the motivation to reduce structure as a proportion of overall mass pushes modern detector structures to the lower limits of composite ply thickness, while demanding maximum stiffness. However, classical approaches to composite laminate design require symmetric laminates and flat structures, in order to minimize warping during fabrication. This constraint of symmetry in laminate design, and a “flat plate” approach to fabrication, results in more massive structures. This study presents an approach to fabricating stable and accurate, geometrically complex composite structures by bonding warped, asymmetric, but ultra-thin component laminates together in an accurate tool, achieving final overall precision normally associated with planar structures. This technique has been used to fabricate a prototype “I-beam” that supports two layers of detecting elements, while being up to 20 times stiffer and up to 30% lower mass than comparable, independent planar structures (typically known as “staves”)

  10. Study of boron distribution in silicon structure by side long section technique

    International Nuclear Information System (INIS)

    Kadirova, M.; Zhumaev, N.; Simakhin, Yu.F.; Usmanova, M.M.

    1997-01-01

    To study deep boron diffusion in the complex silicon structures, consisting of interchange boron doping layers of mono- and polycrystalline silicon, separated by oxide films a technique of side long section by using Solid State Nuclear Track Detector (SSNTD) has been elaborated. The boron distribution technique is based on the detection of alpha-particles from the 10 B(n,α) 7 Li reaction with cellulose nitrate film. The etched α-track registering cellulose nitrite film show the structure image magnified 1/sinφ fold. Boron concentration defined by density of the etched pits appearing on the film surface. An optical microscope analysis of the sample track-mapping image is realised by examination with closely spaced (Δl < Δx/sinφ) and largely spaced (Δl ≥ Δx/sinφ) movements. For analysis of both experimental data the computer application programs have been developed. An universal algorithm for determination of the boron profiles has been created to take into account influence of a deeper layers on a total measurement of track density when Δl < Δx/sinφ. (author)

  11. Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

    Science.gov (United States)

    Kim, Bo-Soon; Ju, Won-Ki; Lee, Min-Woo; Lee, Cheon; Lee, Seung-Gol; Beom-Hoan, O

    2013-05-01

    A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal annealing of a thin metallic film enables the creation of metal nano particles by isolating them from each other by means of the self-aggregation of the metal. After annealing, the samples were soaked in an aqueous etching solution of hydrofluoric acid and hydrogen peroxide. When silicon (Si) was etched for 2 minutes using the Au nano particles, the reflectance was decreased almost 0% over the entire wavelength range from 300 to 1300 nm due to its deep and steeply double tapered structure. When given varying incident angle degrees from 30 degrees to 60 degrees, the reflectance was also maintained at less than 3%. Following this, the etched silicon was treated with a plasma-polymerized fluorocarbon (PPFC) film of about 5 nm using an ICP reactor for surface modification. The result of this surface treatment, the contact angle increased significantly from 27.5 degrees to 139.3 degrees. The surface modification was successful and maintained almost 0% reflectance because of the thin film deposition.

  12. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-04-15

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  13. Electro-optic diffraction grating tuned laser

    International Nuclear Information System (INIS)

    Hughes, R.S.

    1975-01-01

    An electro-optic diffraction grating tuned laser comprising a laser medium, output mirror, retro-reflective grating and an electro-optic diffraction grating beam deflector positioned between the laser medium and the reflective diffraction grating is described. An optional angle multiplier may be used between the electro-optic diffraction grating and the reflective grating. (auth)

  14. Unified design of sinusoidal-groove fused-silica grating.

    Science.gov (United States)

    Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lu, Peng

    2010-10-20

    A general design rule of deep-etched subwavelength sinusoidal-groove fused-silica grating as a highly efficient polarization-independent or polarization-selective device is studied based on the simplified modal method, which shows that the device structure depends little on the incident wavelength, but mainly on the ratio of groove depth to incident wavelength and the ratio of wavelength to grating period. These two ratios could be used as the design guidelines for wavelength-independent structure from deep ultraviolet to far infrared. The optimized grating profile with a different function as a polarizing beam splitter, a polarization-independent two-port beam splitter, or a polarization-independent grating with high efficiency of -1st order is obtained at a wavelength of 1064 nm, and verified by using the rigorous coupled-wave analysis. The performance of the sinusoidal grating is better than a conventional rectangular one, which could be useful for practical applications.

  15. Diffraction efficiency calculations of polarization diffraction gratings with surface relief

    Science.gov (United States)

    Nazarova, D.; Sharlandjiev, P.; Berberova, N.; Blagoeva, B.; Stoykova, E.; Nedelchev, L.

    2018-03-01

    In this paper, we evaluate the optical response of a stack of two diffraction gratings of equal one-dimensional periodicity. The first one is a surface-relief grating structure; the second, a volume polarization grating. This model is based on our experimental results from polarization holographic recordings in azopolymer films. We used films of commercially available azopolymer (poly[1-[4-(3-carboxy-4-hydroxyphenylazo) benzenesulfonamido]-1,2-ethanediyl, sodium salt]), shortly denoted as PAZO. During the recording process, a polarization grating in the volume of the material and a relief grating on the film surface are formed simultaneously. In order to evaluate numerically the optical response of this “hybrid” diffraction structure, we used the rigorous coupled-wave approach (RCWA). It yields stable numerical solutions of Maxwell’s vector equations using the algebraic eigenvalue method.

  16. Iridescence in Meat Caused by Surface Gratings

    Directory of Open Access Journals (Sweden)

    Ali Kemal Yetisen

    2013-11-01

    Full Text Available The photonic structure of cut muscle tissues reveals that the well-ordered gratings diffract light, producing iridescent colours. Cut fibrils protruding from the muscle surface create a two-dimensional periodic array, which diffract light at specific wavelengths upon illumination. However, this photonic effect misleads consumers in a negative way to relate the optical phenomenon with the quality of the product. Here we discuss the fundamentals of this optical phenomenon and demonstrate a methodology for quantitatively measuring iridescence caused by diffraction gratings of muscle tissue surface of pork (Sus scrofa domesticus using reflection spectrophotometry. Iridescence was discussed theoretically as a light phenomenon and spectral measurements were taken from the gratings and monitored in real time during controlled drying. The findings show that the intensity of diffraction diminishes as the surface grating was dried with an air flow at 50 °C for 2 min while the diffracted light wavelength was at 585 ± 9 nm. Our findings indicate that the diffraction may be caused by a blazed surface grating. The implications of the study include providing guidelines to minimise the iridescence by altering the surface microstructure, and in consequence, removing the optical effect.

  17. Miniaturized NIR scanning grating spectrometer for use in mobile phones

    Science.gov (United States)

    Knobbe, Jens; Pügner, Tino; Grüger, Heinrich

    2016-05-01

    An extremely miniaturized scanning grating spectrometer at the size of a sugar cube has been developed at Fraunhofer IPMS. To meet the requirements for the integration into a mobile phone a new system approach has been pursued. The key component within the system is a silicon-based deflectable diffraction grating with an integrated driving mechanism. A first sample of the new spectrometer was built and characterized. It was found to have a spectral range from 950 nm to 1900 nm at a resolution of 10 nm. The results show that the performance of the new MEMS spectrometer is in good agreement with the requirements for mobile phone integration.

  18. Electronic structure of xenon implanted with low energy in amorphous silicon

    International Nuclear Information System (INIS)

    Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

    2007-01-01

    Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

  19. Silicon coupled-ring resonator structures for slow light applications: potential, impairments and ultimate limits

    International Nuclear Information System (INIS)

    Canciamilla, A; Torregiani, M; Ferrari, C; Morichetti, F; Melloni, A; De La Rue, R M; Samarelli, A; Sorel, M

    2010-01-01

    Coupled-ring resonator-based slow light structures are reported and discussed. By combining the advantages of high index contrast silicon-on-insulator technology with an efficient thermo-optical activation, they provide an on-chip solution with a bandwidth of up to 100 GHz and a slowdown factor of up to 16, as well as a continuous reconfiguration scheme and a fine tunability. The performance of these devices is investigated in detail for both static and dynamic operation, in order to evaluate their potential in optical signal processing applications at high bit rate. The main impairments imposed by fabrication imperfections are also discussed in relation to the slowdown factor. In particular, the analysis of the impact of backscatter, disorder and two-photon absorption on the device transfer function reveals the ultimate limits of these structures and provides valuable design rules for their optimization

  20. Structural, Optical, and Vibrational Properties of ZnO Microrods Deposited on Silicon Substrate

    Science.gov (United States)

    Lahlouh, Bashar I.; Ikhmayies, Shadia J.; Juwhari, Hassan K.

    2018-03-01

    Zinc oxide (ZnO) microrod films deposited by spray pyrolysis on silicon substrate at 350 ± 5°C have been studied and evaluated, and compared with thin films deposited by electron beam to confirm the identity of the studied samples. The films were characterized using different techniques. The microrod structure was studied and confirmed by scanning electron microscopy. Fourier-transform infrared (FTIR) spectroscopy and x-ray diffraction analysis confirmed successful deposition of ZnO thin films with the expected wurtzite structure. Reflectance data showed a substantial drop across the whole studied wavelength range. The photoluminescence (PL) spectra of the studied samples showed a peak at ˜ 360 nm, representing a signature of ZnO. The shift in the PL peak position is due to defects and other species present in the films, as confirmed by FTIR and energy-dispersive x-ray spectroscopy results.

  1. Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene.

    Science.gov (United States)

    Rocca, Dario; Abboud, Ali; Vaitheeswaran, Ganapathy; Lebègue, Sébastien

    2017-01-01

    Phosphorene has recently attracted significant interest for applications in electronics and optoelectronics. Inspired by this material an ab initio study was carried out on new two-dimensional binary materials with a structure analogous to phosphorene. Specifically, carbon and silicon monochalcogenides have been considered. After structural optimization, a series of binary compounds were found to be dynamically stable in a phosphorene-like geometry: CS, CSe, CTe, SiO, SiS, SiSe, and SiTe. The electronic properties of these monolayers were determined using density functional theory. By using accurate hybrid functionals it was found that these materials are semiconductors and span a broad range of bandgap values and types. Similarly to phosphorene, the computed effective masses point to a strong in-plane anisotropy of carrier mobilities. The variety of electronic properties carried by these compounds have the potential to broaden the technological applicability of two-dimensional materials.

  2. Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene

    Directory of Open Access Journals (Sweden)

    Dario Rocca

    2017-06-01

    Full Text Available Phosphorene has recently attracted significant interest for applications in electronics and optoelectronics. Inspired by this material an ab initio study was carried out on new two-dimensional binary materials with a structure analogous to phosphorene. Specifically, carbon and silicon monochalcogenides have been considered. After structural optimization, a series of binary compounds were found to be dynamically stable in a phosphorene-like geometry: CS, CSe, CTe, SiO, SiS, SiSe, and SiTe. The electronic properties of these monolayers were determined using density functional theory. By using accurate hybrid functionals it was found that these materials are semiconductors and span a broad range of bandgap values and types. Similarly to phosphorene, the computed effective masses point to a strong in-plane anisotropy of carrier mobilities. The variety of electronic properties carried by these compounds have the potential to broaden the technological applicability of two-dimensional materials.

  3. Multiwavelength optical scatterometry of dielectric gratings

    KAUST Repository

    Yashina, Nataliya P.

    2012-08-01

    Modern scatterometry problems arising in the lithography production of periodic gratings are in the focus of the work. The performance capabilities of a novel theoretical and numerical modeling oriented to these problems are considered. The approach is based on rigorous solutions of 2-D initial boundary value problems of the gratings theory. The quintessence and advantage of the method is the possibility to perform an efficient analysis simultaneously and interactively both for steady state and transient processes of the resonant scattering of electromagnetic waves by the infinite and compact periodic structures. © 2012 IEEE.

  4. Silicon Σ13(5 0 1) grain boundary interface structure determined by bicrystal Bragg rod X-ray scattering

    International Nuclear Information System (INIS)

    Howes, P.B.; Rhead, S.; Roy, M.; Nicklin, C.L.; Rawle, J.L.; Norris, C.A.

    2013-01-01

    The atomic structure of the silicon Σ13(5 0 1) symmetric tilt grain boundary interface has been determined using Bragg rod X-ray scattering. In contrast to conventional structural studies of grain boundary structure using transmission electron microscopy, this approach allows the non-destructive measurement of macroscopic samples. The interface was found to have a single structure that is fully fourfold coordinated. X-ray diffraction data were measured at Beamline I07 at the Diamond Light Source

  5. Diffraction by m-bonacci gratings

    International Nuclear Information System (INIS)

    Monsoriu, Juan A; Giménez, Marcos H; Furlan, Walter D; Barreiro, Juan C; Saavedra, Genaro

    2015-01-01

    We present a simple diffraction experiment with m-bonacci gratings as a new interesting generalization of the Fibonacci ones. Diffraction by these non-conventional structures is proposed as a motivational strategy to introduce students to basic research activities. The Fraunhofer diffraction patterns are obtained with the standard equipment present in most undergraduate physics labs and are compared with those obtained with regular periodic gratings. We show that m-bonacci gratings produce discrete Fraunhofer patterns characterized by a set of diffraction peaks which positions are related to the concept of a generalized golden mean. A very good agreement is obtained between experimental and numerical results and the students’ feedback is discussed. (paper)

  6. Bragg grating rogue wave

    Energy Technology Data Exchange (ETDEWEB)

    Degasperis, Antonio [Dipartimento di Fisica, “Sapienza” Università di Roma, P.le A. Moro 2, 00185 Roma (Italy); Wabnitz, Stefan, E-mail: stefan.wabnitz@unibs.it [Dipartimento di Ingegneria dell' Informazione, Università degli Studi di Brescia and INO-CNR, via Branze 38, 25123 Brescia (Italy); Aceves, Alejandro B. [Southern Methodist University, Dallas (United States)

    2015-06-12

    We derive the rogue wave solution of the classical massive Thirring model, that describes nonlinear optical pulse propagation in Bragg gratings. Combining electromagnetically induced transparency with Bragg scattering four-wave mixing may lead to extreme waves at extremely low powers.

  7. Gamma-stimulated modification of structure and mechanical properties of silicon crystals

    International Nuclear Information System (INIS)

    Khaydarov, T.K.; Khamraeva, R.N.; Rustamova, V.M.; Ibragimova, E.M.; Kalanov, M.U.; Abdurakhimov, A.A.; Abdurakhmanov, A.A.

    2004-01-01

    Full text: The paper presents the results of gamma-irradiation effect on the fine structure and mechanical properties of silicon crystals. The objects of researches were p-Si single crystals with the following characteristics: ρ ≅ 10Ω · cm; N D ≅ 10 2 cm -2 ; N O ≅ 10 17 cm -3 ; N B ≅ 6· 10 15 cm -3 . The plate size were 20.8·4.1· 1.2 mm 3 with the surface oriented along {111}. The structure was studied at the diffractometer DRON-UM1 with CuK α - radiation ( λ = 0.1542 nm). The intrinsic friction (Q -1 ) of the samples was measured with the ultra-sonic resonance technique at the frequency of 148 kHz of the plate bending oscillations. The samples were irradiated at the INP AS RUz 60 Co gamma-facility (E γ ≅ 1.2 MeV) in the dose range of 10 1 † 10 7 Gy at 320 K. The dose dependence of Q -1 had a non-monotonous character. The irradiation to the dose of 5·10 3 Gy resulted in increasing the initial value of Q -1 due to irradiation induced growth of the point defect concentration and accumulating of the elastic lattice strains. It is also evidenced by the symmetric broadening of the structure reflection (111). At the dose of 5 ·10 3 Gy the strain value seems to gain the upper fluidity limit of (6 †15) ·10 -8 N/m 2 , after which a weak splitting of the (111) reflection appears, meaning the beginning of twin formation in the form of insertion stock defects with partial dislocations. At dose increasing to 10 4 Gy the twins cause the sharp drop of Q -1 , related with decreasing of the elastic strains, which stops at the dose of 5·10 4 Gy probably due to reaching the lower limit of fluidity for silicon ((1† 4) · 10 -8 N/m 2 ), when the process of the twin defect formation completes. This mechanism is confirmed by the total splitting of the structure peak (111) and practical independence of Q -1 on dose till 10 7 Gy. Thus, gamma-irradiation in the studied dose range modifies the existing lattice imperfectness, that influences upon both mechanical

  8. Grazing incidence X-ray fluorescence analysis of buried interfaces in periodically structured crystalline silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhauer, David; Preidel, Veit; Becker, Christiane [Young Investigator Group Nanostructured Silicon for Photovoltaic and Photonic Implementations (Nano-SIPPE), Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Pollakowski, Beatrix; Beckhoff, Burkhard [Physikalisch-Technische Bundesanstalt, Berlin (Germany); Baumann, Jonas; Kanngiesser, Birgit [Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany); Amkreutz, Daniel; Rech, Bernd [Institut Silizium Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany); Back, Franziska; Rudigier-Voigt, Eveline [SCHOTT AG, Mainz (Germany)

    2015-03-01

    We present grazing incidence X-ray fluorescence (GIXRF) experiments on 3D periodically textured interfaces of liquid phase crystallized silicon thin-film solar cells on glass. The influence of functional layers (SiO{sub x} or SiO{sub x}/SiC{sub x}) - placed between glass substrate and silicon during crystallization - on the final carbon and oxygen contaminations inside the silicon was analyzed. Baring of the buried structured silicon surface prior to GIXRF measurement was achieved by removal of the original nano-imprinted glass substrate by wet-chemical etching. A broad angle of incidence distribution was determined for the X-ray radiation impinging on this textured surface. Optical simulations were performed in order to estimate the incident radiation intensity on the structured surface profile considering total reflection and attenuation effects. The results indicate a much lower contamination level for SiO{sub x} compared to the SiO{sub x}/SiC{sub x} interlayers, and about 25% increased contamination when comparing structured with planar silicon layers, both correlating with the corresponding solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Radiative properties tailoring of grating by comb-drive microactuator

    International Nuclear Information System (INIS)

    Jiao, Y.; Liu, L.H.; Liu, L.J.; Hsu, P.-F.

    2014-01-01

    Micro-scale grating structures are widely researched in recent years. Although micro-scale fabrication technology is highly advanced today, with grating aspect ratio greater than 25:1 being achievable some fabrication requirements, such as fine groove processing, are still challenging. Comb-drive microactuator is proposed in this paper to be utilized on simple binary grating structures for tailoring or modulating spectral radiation properties by active adjustment. The rigorous coupled-wave analysis (RCWA) is used to calculate the absorptance of proposed structures and to investigate the impacts brought by the geometry and displacement of comb-drive microactuator. The results show that the utilization of comb-drive microactuator on grating improves the absorptance of simple binary grating while avoiding the difficulty fine groove processing. Spectral radiation property tailoring after gratings are fabricated becomes possible with the comb-drive microactuator structure. - Highlights: • A microscale grating structure with comb-driven microactuator is proposed. • The movement of microactuator changes peak absorptance resonance wavelength. • Geometric and displacement effects of comb finger on absorptance are investigated. • Both RCWA and LC circuit models are developed to predict the resonance wavelength. • Resonance frequency equations of LC circuits allow quick design analysis

  10. Extended asymmetric-cut multilayer X-ray gratings.

    Science.gov (United States)

    Prasciolu, Mauro; Haase, Anton; Scholze, Frank; Chapman, Henry N; Bajt, Saša

    2015-06-15

    The fabrication and characterization of a large-area high-dispersion blazed grating for soft X-rays based on an asymmetric-cut multilayer structure is reported. An asymmetric-cut multilayer structure acts as a perfect blazed grating of high efficiency that exhibits a single diffracted order, as described by dynamical diffraction throughout the depth of the layered structure. The maximum number of grating periods created by cutting a multilayer deposited on a flat substrate is equal to the number of layers deposited, which limits the size of the grating. The size limitation was overcome by depositing the multilayer onto a substrate which itself is a coarse blazed grating and then polish it flat to reveal the uniformly spaced layers of the multilayer. The number of deposited layers required is such that the multilayer thickness exceeds the step height of the substrate structure. The method is demonstrated by fabricating a 27,060 line pairs per mm blazed grating (36.95 nm period) that is repeated every 3,200 periods by the 120-μm period substrate structure. This preparation technique also relaxes the requirements on stress control and interface roughness of the multilayer film. The dispersion and efficiency of the grating is demonstrated for soft X-rays of 13.2 nm wavelength.

  11. Fully etched apodized grating coupler on the SOI platform with −058 dB coupling efficiency

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally investiga......We design and fabricate an ultrahigh coupling efficiency (CE) fully etched apodized grating coupler on the silicon- on-insulator (SOI) platform using subwavelength photonic crystals and bonded aluminum mirror. Fabrication error sensitivity andcoupling angle dependence are experimentally...

  12. Sub-10 nm structures on silicon by thermal dewetting of platinum

    International Nuclear Information System (INIS)

    Strobel, Sebastian; Kirkendall, Christopher; Chang, Jae-Byum; Berggren, Karl K

    2010-01-01

    A study of the dewetting behavior of platinum-thin-films on silicon was carried out to determine how variation of dewetting parameters affects the evolution of film morphology and to pinpoint which parameters yielded the smallest, most circular features. Platinum film thickness as well as dewetting time and temperature were varied and the film morphology characterized by means of scanning electron microscopy (SEM) analysis. Two different pathways of dewetting predicted in the literature (Vrij 1966 Discuss. Faraday Soc. 42 23, Becker et al 2003 Nat. Mater. 2 59-63) were observed. Depending on the initial criteria, restructuring of the film occurred via hole or droplet formation. With increased annealing time, a transition from an intermediate network structure to separated islands occurred. In addition, the formation of multilayered films, silicide crystals and nanowires occurred for certain parameters. Nevertheless, the dewetting behavior witnessed could be related to physical processes. Droplets with a mean diameter of 9 nm were formed by using a 1.5 nm thick platinum film annealed at 800 deg. C for 30 s. To demonstrate the suitability of the annealed films for further processing, we then used the dewetted films as masks for reactive ion etching to transfer the pattern into the silicon substrate, forming tapered nanopillars.

  13. High-aspect-ratio, silicon oxide-enclosed pillar structures in microfluidic liquid chromatography.

    Science.gov (United States)

    Taylor, Lisa C; Lavrik, Nickolay V; Sepaniak, Michael J

    2010-11-15

    The present paper discusses the ability to separate chemical species using high-aspect-ratio, silicon oxide-enclosed pillar arrays. These miniaturized chromatographic systems require smaller sample volumes, experience less flow resistance, and generate superior separation efficiency over traditional packed bed liquid chromatographic columns, improvements controlled by the increased order and decreased pore size of the systems. In our distinctive fabrication sequence, plasma-enhanced chemical vapor deposition (PECVD) of silicon oxide is used to alter the surface and structural properties of the pillars for facile surface modification while improving the pillar mechanical stability and increasing surface area. The separation behavior of model compounds within our pillar systems indicated an unexpected hydrophobic-like separation mechanism. The effects of organic modifier, ionic concentration, and pressure-driven flow rate were studied. A decrease in the organic content of the mobile phase increased peak resolution while detrimentally effecting peak shape. A resolution of 4.7 (RSD = 3.7%) was obtained for nearly perfect Gaussian shaped peaks, exhibiting plate heights as low as 1.1 and 1.8 μm for fluorescein and sulforhodamine B, respectively. Contact angle measurements and DART mass spectrometry analysis indicate that our employed elastomeric soft bonding technique modifies pillar properties, creating a fortuitous stationary phase. This discovery provides evidence supporting the ability to easily functionalize PECVD oxide surfaces by gas-phase reactions.

  14. Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

    International Nuclear Information System (INIS)

    Elzakker, G. van; Nadazdy, V.; Tichelaar, F.D.; Metselaar, J.W.; Zeman, M.

    2006-01-01

    Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R (R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron microscopy imaging and Raman spectroscopy. The phase evolution from the amorphous phase into the mixed and eventually microcrystalline phase strongly depends on the hydrogen dilution. The initiation of the microcrystalline growth occurs between R = 20 and R = 25. The phase transition becomes more abrupt with increasing hydrogen dilution. Optoelectronic properties of the layers have been determined. Increasing hydrogen dilution results in films with increasing effective defect density and Urbach energy, which is related to inhomogeneous growth. The charge deep-level transient spectroscopy technique (Q-DLTS) was applied for the first time on hydrogen diluted thin silicon films in order to investigate the energy distribution of the defect states in these layers as a function of the dilution ratio R. The Q-DLTS spectra indicate a difference in defect-state distribution when the films evolve from the amorphous phase into the microcrystalline phase

  15. Comparison between periodic and stochastic parabolic light trapping structures for thin-film microcrystalline Silicon solar cells.

    Science.gov (United States)

    Peters, M; Battaglia, C; Forberich, K; Bläsi, B; Sahraei, N; Aberle, A G

    2012-12-31

    Light trapping is of very high importance for silicon photovoltaics (PV) and especially for thin-film silicon solar cells. In this paper we investigate and compare theoretically the light trapping properties of periodic and stochastic structures having similar geometrical features. The theoretical investigations are based on the actual surface geometry of a scattering structure, characterized by an atomic force microscope. This structure is used for light trapping in thin-film microcrystalline silicon solar cells. Very good agreement is found in a first comparison between simulation and experimental results. The geometrical parameters of the stochastic structure are varied and it is found that the light trapping mainly depends on the aspect ratio (length/height). Furthermore, the maximum possible light trapping with this kind of stochastic structure geometry is investigated. In a second step, the stochastic structure is analysed and typical geometrical features are extracted, which are then arranged in a periodic structure. Investigating the light trapping properties of the periodic structure, we find that it performs very similar to the stochastic structure, in agreement with reports in literature. From the obtained results we conclude that a potential advantage of periodic structures for PV applications will very likely not be found in the absorption enhancement in the solar cell material. However, uniformity and higher definition in production of these structures can lead to potential improvements concerning electrical characteristics and parasitic absorption, e.g. in a back reflector.

  16. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  17. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  18. Local structure of the silicon implanted in a graphite single crystal

    International Nuclear Information System (INIS)

    Baba, Yuji; Shimoyama, Iwao; Sekiguchi, Tetsuhiro

    2002-01-01

    Solid carbon forms two kinds of local structures, i.e., diamond-like and two-dimensional graphite structures. In contrast, silicon carbide tends to prefer only diamond structure that is composed of sp 3 bonds. In order to clarify weather or not two-dimensional graphitic Si x C layer exists, we investigate the local structures of Si x C layer produced by Si + -ion implantation into highly oriented pyrolytic graphite (HOPG) by means of near-edge X-ray absorption fine structure (NEXAFS). The energy of the resonance peak in the Si K-edge NEXAFS spectra for Si + -implanted HOPG is lower than those for any other Si-containing materials. The intensity of the resonance peak showed a strong polarization dependence. These results suggests that the final state orbitals around Si atoms have π*-like character and the direction of this orbital is perpendicular to the graphite plane. It is elucidated that the Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms a two-dimensionally spread graphite-like layer with sp 2 bonds. (author)

  19. High energy Xe{sup +} ion beam induced ripple structures on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

    2008-07-01

    Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

  20. Structural impact on the eigenenergy renormalization for carbon and silicon allotropes and boron nitride polymorphs

    Science.gov (United States)

    Tutchton, Roxanne; Marchbanks, Christopher; Wu, Zhigang

    2018-05-01

    The phonon-induced renormalization of electronic band structures is investigated through first-principles calculations based on the density functional perturbation theory for nine materials with various crystal symmetries. Our results demonstrate that the magnitude of the zero-point renormalization (ZPR) of the electronic band structure is dependent on both crystal structure and material composition. We have performed analysis of the electron-phonon-coupling-induced renormalization for two silicon (Si) allotropes, three carbon (C) allotropes, and four boron nitride (BN) polymorphs. Phonon dispersions of each material were computed, and our analysis indicates that materials with optical phonons at higher maximum frequencies, such as graphite and hexagonal BN, have larger absolute ZPRs, with the exception of graphene, which has a considerably smaller ZPR despite having phonon frequencies in the same range as graphite. Depending on the structure and material, renormalizations can be comparable to the GW many-body corrections to Kohn-Sham eigenenergies and, thus, need to be considered in electronic structure calculations. The temperature dependence of the renormalizations is also considered, and in all materials, the eigenenergy renormalization at the band gap and around the Fermi level increases with increasing temperature.

  1. Light extraction from GaN-based LED structures on silicon-on-insulator substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, S.; Teo, S.L.; Lin, V.K.X.; Chen, M.F. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 117602 (Singapore); Dadgar, A.; Krost, A. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany); AZZURRO Semiconductors AG, Universitaetsplatz 1, 39016 Magdeburg (Germany); Christen, J. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany)

    2010-01-15

    Nano-patterning of GaN-based devices is a promising technology in the development of high output power devices. Recent researches have been focused on the realization of two-dimensional (2D) photonic crystal (PhC) structure to improve light extraction efficiency and to control the direction of emission. In this study, we have demonstrated improved light extraction from green light emitting diode (LED) structures on thin silicon-on-insulator (SOI) substrates using surface nanopatterning. Scanning electron microscopy (SEM) is used to probe the size, shape, and etch depth of nano-patterns on the LED surfaces. Different types of nanopatterns were created by e-beam lithography and inductively coupled plasma etching. The LED structures after post processing are studied by photoluminescence (PL) measurements. The GaN nanophotonic structures formed by ICP etching led to more than five-fold increase in the intensity of the green emission. The improved light extraction is due to the combination of SOI substrate reflectivity and photonic structures on top GaN LED surfaces. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

    International Nuclear Information System (INIS)

    Chong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul

    2012-01-01

    High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X C of ∼82% and are surrounded by a thin layer of SiO x . The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X C to ∼65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ∼1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text. - Highlights: ► Growth of random oriented silicon nanowires using hot-wire assisted plasma enhanced chemical vapor deposition. ► Increase in rf power reduces the crystallinity of silicon nanowires. ► High density and nanocrystalline structure in silicon nanowires significant enhance the near IR light absorption. ► Oxide defects and silicon nanocrystallites in silicon nanowires reveal photoluminescence in red–orange and red regions.

  3. Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

    International Nuclear Information System (INIS)

    Nowak, S.H.; Banaś, D.; Błchucki, W.; Cao, W.; Dousse, J.-Cl.; Hönicke, P.; Hoszowska, J.; Jabłoński, Ł.; Kayser, Y.; Kubala-Kukuś, A.; Pajek, M.; Reinhardt, F.; Savu, A.V.; Szlachetko, J.

    2014-01-01

    Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle- and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage

  4. Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

    International Nuclear Information System (INIS)

    Lutsenko, Vadym G.

    2008-01-01

    Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

  5. Structure and properties of nanocrystalline soft magnetic composite materials with silicon polymer matrix

    International Nuclear Information System (INIS)

    Dobrzanski, L.A.; Nowosielski, R.; Konieczny, J.; PrzybyI, A.; WysIocki, J.

    2005-01-01

    The paper concerns investigation of nanocrystalline composites technology preparation. The composites in the form of rings with rectangular transverse section, and with polymer matrix and nanocrystalline metallic powders fulfillment were made, for obtaining good ferromagnetic properties. The nanocrystalline ferromagnetic powders were manufactured by high-energy ball milling of metallic glasses strips in an as-quenched state. Generally for investigation, Co matrix alloys with the silicon polymer were used. Magnetic properties in the form of hysteresis loop by rings method were measured. Generally composite cores showed lower soft ferromagnetic properties than winded cores of nanocrystalline strips, but composite cores showed interesting mechanical properties. Furthermore, the structure of strips and powders on properties of composites were investigated

  6. Temperature dependence of conductivity in high mobility MIS structures on a base of (001) silicon

    International Nuclear Information System (INIS)

    Vyrodov, E.A.; Dolgopolov, V.T.; Dorozhkin, C.I.; Zhitenev, N.B.

    1988-01-01

    Measurements of the temperature dependence of the conductivity of two-dimensional electrons in silicon MIS structures were carried out. It is shown that the observed dependence is well described by the equation σ(T) = σ(0)(1-Q(kT var-epsilon F )-P(kT/var-epsilon F )3/2 + O[(kT/var-epsilon F ) 2 ]). The variation of the coefficient Q with the density N S of the two-dimensional electrons is determined, and it is shown that the observed trend of the Q(s) curve is described by consideration of the temperature dependence of the dielectric function of a two-dimensional electron gas

  7. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-10-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius.

  8. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    International Nuclear Information System (INIS)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-01-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius

  9. The structural properties of flower-like ZnO nanostructures on porous silicon

    Science.gov (United States)

    Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah

    2018-05-01

    The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.

  10. Mechanical and thermal behavior of a prototype support structure for a large silicon vertex detector (BCD)

    International Nuclear Information System (INIS)

    Mulderink, H.; Michels, N.; Joestlein, H.

    1989-01-01

    The Bottom Collider Detector (BCD) has been proposed as a device to study large numbers of events containing B mesons. To identify secondary vertices in hadronic events it will employ the most ambitious silicon strip tracking detector proposed to-date. This report will discuss results from measurements on a first mechanical/thermal model of the vertex detector support structure. The model that was built and used for the studies described here is made of brass. Brass was used because it is readily available and easily assembled by soft soldering, and, for appropriate thicknesses, it will behave similarly to the beryllium that will be used in the actual detector. The trough was built to full scale with the reinforcement webbing and the cooling channels in place. There were no detector modules in place. We plan, however, to install modules in the trough in the future. The purpose of the model was to address two concerns that have arisen about the proposed structure of the detector. The first is whether or not the trough will be stable enough. The trough must be very light in weight yet have a high degree of rigidity. Because of the 3m length of the detector there is question as to the stiffness of the proposed trough. The main concern is that there will sagging or movement of the trough in the middle region. The second problem is the heat load. There will be a great deal of heat generated by the electronics attached to the detector modules. So the question arises as to whether or not the silicon detectors can be kept cool enough so that when the actual experiment is run the readings will be valid. The heat may also induce motion by differential expansion of support components. 26 figs

  11. Dynamic spatial structure of spontaneous beams in photorefractive bismuth sillicon oxide

    DEFF Research Database (Denmark)

    Buchhave, Preben; Lyuksyutov, S.; Vasnetsov, M.

    1996-01-01

    We report the domain structure of spontaneously occurring beams (subharmonics) in photorefractive bismuth silicon oxide with an applied electric field from 1 to 6 kV/cm and a running grating. The subharmonic beams are generated in a pattern of domains that evolve dynamically as they move through ...

  12. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  13. Grating stimulated echo

    International Nuclear Information System (INIS)

    Dubetsky, B.; Berman, P.R.; Sleator, T.

    1992-01-01

    A theory of a grating simulated echo (GTE) is developed. The GSE involves the sequential excitation of atoms by two counterpropagating traveling waves, a standing wave, and a third traveling wave. It is shown that the echo signal is very sensitive to small changes in atomic velocity, much more sensitive than the normal stimulated echo. Use of the GSE as a collisional probe or accelerometer is discussed

  14. Study on structural design technique of silicon carbide applied for thermochemical hydrogen production IS process

    International Nuclear Information System (INIS)

    Takegami, Hiroaki; Terada, Atsuhiko; Inagaki, Yoshiyuki; Ishikura, Syuichi

    2011-03-01

    The IS process is the hydrogen production method which used the thermochemical reaction cycle of sulfuric acid and iodyne. Therefore, the design to endure the high temperature and moreover corrode-able environment is required to the equipment. Specifically, the sulfuric acid decomposer which is one of the main equipment of the IS process is the equipment to heat with hot helium and for the sulfuric acid of 90 wt% to evaporate. Moreover, it is the important equipment to supply the SO 3 decomposer which is the following process, resolving the part of sulfuric acid vapor into SO 3 with. The heat exchanger that sulfuric acid evaporates must be made pressure-resistant structure because it has the high-pressure helium of 4 MPa and the material that the high temperature and the corrosion environment of equal to or more than 700degC can be endured must be used. As the material, it is selected from the corrosion experiment and so on when SiC which is carbonization silicone ceramics is the most excellent material. However, even if it damages the ceramic block which is a heat exchanger because it becomes the structure which is stored in pressure-resistant metallic container, fluid such as sulfuric acid becomes the structure which doesn't leak out outside. However, the structure design technique to have been unified when using ceramics as the structure part isn't serviced as the standard. This report is the one which was studied about the structural design technique to have taken the material strength characteristic of the ceramics into consideration, refer to existing structural design standard. (author)

  15. Nitride-based Quantum-Confined Structures for Ultraviolet-Visible Optical Devices on Silicon Substrates

    KAUST Repository

    Janjua, Bilal

    2017-04-01

    III–V nitride quantum-confined structures embedded in nanowires (NWs), also known as quantum-disks-in-nanowires (Qdisks-in-NWs), have recently emerged as a new class of nanoscale materials exhibiting outstanding properties for optoelectronic devices and systems. It is promising for circumventing the technology limitation of existing planar epitaxy devices, which are bounded by the lattice-, crystal-structure-, and thermal- matching conditions. This work presents significant advances in the growth of good quality GaN, InGaN and AlGaN Qdisks-in-NWs based on careful optimization of the growth parameters, coupled with a meticulous layer structure and active region design. The NWs were grown, catalyst-free, using plasma assisted molecular beam epitaxy (PAMBE) on silicon (Si) substrates. A 2-step growth scheme was developed to achieve high areal density, dislocation free and vertically aligned NWs on Ti/Si substrates. Numerical modeling of the NWs structures, using the nextnano3 software, showed reduced polarization fields, and, in the presence of Qdisks, exhibited improved quantum-confinement; thus contributing to high carrier radiative-recombination rates. As a result, based on the growth and device structure optimization, the technologically challenging orange and yellow NWs light emitting devices (LEDs) targeting the ‘green-yellow’ gap were demonstrated on scalable, foundry compatible, and low-cost Ti coated Si substrates. The NWs work was also extended to LEDs emitting in the ultraviolet (UV) range with niche applications in environmental cleaning, UV-curing, medicine, and lighting. In this work, we used a Ti (100 nm) interlayer and Qdisks to achieve good quality AlGaN based UV-A (320 - 400 nm) device. To address the issue of UV-absorbing polymer, used in the planarization process, we developed a pendeo-epitaxy technique, for achieving an ultra-thin coalescence of the top p-GaN contact layer, for a self-planarized Qdisks-in-NWs UV-B (280 – 320 nm) LED grown

  16. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  17. Photonic Hilbert transformers based on laterally apodized integrated waveguide Bragg gratings on a SOI wafer.

    Science.gov (United States)

    Bazargani, Hamed Pishvai; Burla, Maurizio; Chrostowski, Lukas; Azaña, José

    2016-11-01

    We experimentally demonstrate high-performance integer and fractional-order photonic Hilbert transformers based on laterally apodized Bragg gratings in a silicon-on-insulator technology platform. The sub-millimeter-long gratings have been fabricated using single-etch electron beam lithography, and the resulting HT devices offer operation bandwidths approaching the THz range, with time-bandwidth products between 10 and 20.

  18. 3D printing PLA and silicone elastomer structures with sugar solution support material

    Science.gov (United States)

    Hamidi, Armita; Jain, Shrenik; Tadesse, Yonas

    2017-04-01

    3D printing technology has been used for rapid prototyping since 1980's and is still developing in a way that can be used for customized products with complex design and miniature features. Among all the available 3D printing techniques, Fused Deposition Modeling (FDM) is one of the most widely used technologies because of its capability to build different structures by employing various materials. However, complexity of parts made by FDM is greatly limited by restriction of using support materials. Support materials are often used in FDM for several complex geometries such as fully suspended shapes, overhanging surfaces and hollow features. This paper describes an approach to 3D print a structure using silicone elastomer and polylactide fiber (PLA) by employing a novel support material that is soluble in water. This support material is melted sugar which can easily be prepared at a low cost. Sugar is a carbohydrate, which is found naturally in plants such as sugarcane and sugar beets; therefore, it is completely organic and eco-friendly. As another advantage, the time for removing this material from the part is considerably less than other commercially available support materials and it can be removed easily by warm water without leaving any trace. Experiments were done using an inexpensive desktop 3D printer to fabricate complex structures for use in soft robots. The results envision that further development of this system would contribute to a method of fabrication of complex parts with lower cost yet high quality.

  19. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  20. Imaging of Volume Phase Gratings in a Photosensitive Polymer, Recorded in Transmission and Reflection Geometry

    Directory of Open Access Journals (Sweden)

    Tina Sabel

    2014-02-01

    Full Text Available Volume phase gratings, recorded in a photosensitive polymer by two-beam interference exposure, are studied by means of optical microscopy. Transmission gratings and reflection gratings, with periods in the order of 10 μm down to 130 nm, were investigated. Mapping of holograms by means of imaging in sectional view is introduced to study reflection-type gratings, evading the resolution limit of classical optical microscopy. In addition, this technique is applied to examine so-called parasitic gratings, arising from interference from the incident reference beam and the reflected signal beam. The appearance and possible avoidance of such unintentionally recorded secondary structures is discussed.

  1. Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

    Science.gov (United States)

    Timerkaeva, Dilyara; Attaccalite, Claudio; Brenet, Gilles; Caliste, Damien; Pochet, Pascal

    2018-04-01

    The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.

  2. Rapid thermal process by RF heating of nano-graphene layer/silicon substrate structure: Heat explosion theory approach

    Science.gov (United States)

    Sinder, M.; Pelleg, J.; Meerovich, V.; Sokolovsky, V.

    2018-03-01

    RF heating kinetics of a nano-graphene layer/silicon substrate structure is analyzed theoretically as a function of the thickness and sheet resistance of the graphene layer, the dimensions and thermal parameters of the structure, as well as of cooling conditions and of the amplitude and frequency of the applied RF magnetic field. It is shown that two regimes of the heating can be realized. The first one is characterized by heating of the structure up to a finite temperature determined by equilibrium between the dissipated loss power caused by induced eddy-currents and the heat transfer to environment. The second regime corresponds to a fast unlimited temperature increase (heat explosion). The criterions of realization of these regimes are presented in the analytical form. Using the criterions and literature data, it is shown the possibility of the heat explosion regime for a graphene layer/silicon substrate structure at RF heating.

  3. Vertical-cavity laser with a novel grating mirror

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol

    Hybrid III-V on silicon (Si) ‘vertical cavity lasers’ (hybrid VCLs), which can emit light laterally into a Si waveguide, are fabricated and investigated. The Si-integrated hybrid VCL consists of a top dielectric Bragg reflector (DBR), a III-V active layer, and a bottom high contrast grating (HCG...... the vertical cavity laterally into the Si waveguide. The measured inplane emission proves the lasing action with a side-mode suppression ratio (SMSR) of 27.5 dB at a peak wavelength of 1486 nm. The threshold pumping power corresponds to a current injection of 1.1 mA. A signature of highly anisotropic cavity...... dispersion has been observed and discussed, which is unique for HCG-based vertical cavities. The second version proves the potential for high-speed operation of hybrid VCL structure. In the hybrid VCL structure, the effective cavity length is substantially reduced by using a dielectric DBR and a TM...

  4. Cylinder and metal grating polarization beam splitter

    Science.gov (United States)

    Yang, Junbo; Xu, Suzhi

    2017-08-01

    We propose a novel and compact metal grating polarization beam splitter (PBS) based on its different reflected and transmitted orders. The metal grating exhibits a broadband high reflectivity and polarization dependence. The rigorous coupled wave analysis is used to calculate the reflectivity and the transmitting spectra and optimize the structure parameters to realize the broadband PBS. The finite-element method is used to calculate the field distribution. The characteristics of the broadband high reflectivity, transmitting and the polarization dependence are investigated including wavelength, period, refractive index and the radius of circle grating. When grating period d = 400 nm, incident wavelength λ = 441 nm, incident angle θ = 60° and radius of circle d/5, then the zeroth reflection order R0 = 0.35 and the transmission zeroth order T0 = 0.08 for TE polarization, however, T0 = 0.34 and R0 = 0.01 for TM mode. The simple fabrication method involves only single etch step and good compatibility with complementary metal oxide semiconductor technology. PBS designed here is particularly suited for optical communication and optical information processing.

  5. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  6. Grating-assisted surface acoustic wave directional couplers

    Science.gov (United States)

    Golan, G.; Griffel, G.; Seidman, A.; Croitoru, N.

    1991-07-01

    Physical properties of novel grating-assisted Y directional couplers are examined using the coupled-mode theory. A general formalism for the analysis of the lateral perturbed directional coupler properties is presented. Explicit expressions for waveguide key parameters such as coupling length, grating period, and other structural characterizations, are obtained. The influence of other physical properties such as time and frequency response or cutoff conditions are also analyzed. A plane grating-assisted directional coupler is presented and examined as a basic component in the integrated acoustic technology.

  7. Local electronic and geometric structures of silicon atoms implanted in graphite

    International Nuclear Information System (INIS)

    Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao

    2002-01-01

    Low-energy Si + ions were implanted in highly oriented pyrolitic graphite (HOPG) up to 1% of surface atomic concentration, and the local electronic and geometric structures around the silicon atoms were in situ investigated by means of the Si K-edge X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy using linearly polarized synchrotron radiation. The resonance peak appeared at 1839.5 eV in the Si K-edge XANES spectra for Si + -implanted HOPG. This energy is lower than those of the Si 1s→σ * resonance peaks in any other Si-containing materials. The intensity of the resonance peak showed strong polarization dependence, which suggests that the final state orbitals around the implanted Si atoms have π * -like character. It is concluded that the σ-type Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms two-dimensionally spread graphite-like layer with sp 2 bonds

  8. The all-optical modulator in dielectric-loaded waveguide with graphene-silicon heterojunction structure

    Science.gov (United States)

    Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei

    2018-04-01

    All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.

  9. Silicon Oxysulfide, OSiS: Rotational Spectrum, Quantum-Chemical Calculations, and Equilibrium Structure.

    Science.gov (United States)

    Thorwirth, Sven; Mück, Leonie Anna; Gauss, Jürgen; Tamassia, Filippo; Lattanzi, Valerio; McCarthy, Michael C

    2011-06-02

    Silicon oxysulfide, OSiS, and seven of its minor isotopic species have been characterized for the first time in the gas phase at high spectral resolution by means of Fourier transform microwave spectroscopy. The equilibrium structure of OSiS has been determined from the experimental data using calculated vibration-rotation interaction constants. The structural parameters (rO-Si = 1.5064 Å and rSi-S = 1.9133 Å) are in very good agreement with values from high-level quantum chemical calculations using coupled-cluster techniques together with sophisticated additivity and extrapolation schemes. The bond distances in OSiS are very short in comparison with those in SiO and SiS. This unexpected finding is explained by the partial charges calculated for OSiS via a natural population analysis. The results suggest that electrostatic effects rather than multiple bonding are the key factors in determining bonding in this triatomic molecule. The data presented provide the spectroscopic information needed for radio astronomical searches for OSiS.

  10. Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Birkelund, Karen; Grey, Francois

    1996-01-01

    on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer-scale patterns can...

  11. Porous silicon in solar cell structures : a review of achievements and modern directions of further use

    NARCIS (Netherlands)

    Yerokhov, VY; Melnyk, [No Value

    1999-01-01

    Porous silicon, which is being obtained by electrochemical etching of silicon wafers in electrolytes on the base of hydrofluoric acid, recently attracted the attention of specialists in photovoltaics even more due to a number of its unique properties. However, at present, acceptable results are

  12. Theoretical study of the structure, energetics, and dynamics of silicon and carbon systems using tight-binding approaches

    International Nuclear Information System (INIS)

    Xu, Chunhui.

    1991-01-01

    Semiempirical interatomic potentials are developed for silicon and carbon by modeling the total energy of the system using tight-binding approaches. The parameters of the models were obtained by fitting to results from accurate first-principles Local Density Functional calculations. Applications to the computation of phonons as a function of volume for diamond-structured silicon and carbon and the thermal expansions for silicon and diamond yields results which agree well with experiment. The physical origin of the negative thermal expansion observed in silicon is explained. A tight-binding total energy model is generated capable of describing carbon systems with a variety of atomic coordinations and topologies. The model reproduces the total energy versus volume curves of various carbon polytypes as well as phonons and elastic constants of diamond and graphite. The model has also been used in the molecular-dynamics simulation of the properties of carbon clusters. The calculated ground-state geometries of small clusters (C 2 --C 10 ) correlates well with results from accurate quantum chemical calculations, and the structural trend of clusters from C 2 to C 60 are investigated. 67 refs., 19 figs

  13. Review of High-Speed Fiber Optic Grating Sensors Systems

    Energy Technology Data Exchange (ETDEWEB)

    Udd, E; Benterou, J; May, C; Mihailov, S J; Lu, P

    2010-03-24

    Fiber grating sensors can be used to support a wide variety of high speed measurement applications. This includes measurements of vibrations on bridges, traffic monitoring on freeways, ultrasonic detection to support non-destructive tests on metal plates and providing details of detonation events. This paper provides a brief overview of some of the techniques that have been used to support high speed measurements using fiber grating sensors over frequency ranges from 10s of kHz, to MHZ and finally toward frequencies approaching the GHz regime. Very early in the development of fiber grating sensor systems it was realized that a high speed fiber grating sensor system could be realized by placing an optical filter that might be a fiber grating in front of a detector so that spectral changes in the reflection from a fiber grating were amplitude modulated. In principal the only limitation on this type of system involved the speed of the output detector which with the development of high speed communication links moved from the regime of 10s of MHz toward 10s of GHz. The earliest deployed systems involved civil structures including measurements of the strain fields on composite utility poles and missile bodies during break tests, bridges and freeways. This was followed by a series of developments that included high speed fiber grating sensors to support nondestructive testing via ultrasonic wave detection, high speed machining and monitoring ship hulls. Each of these applications involved monitoring mechanical motion of structures and thus interest was in speeds up to a few 10s of MHz. Most recently there has been interest in using fiber grating to monitor the very high speed events such as detonations and this has led to utilization of fiber gratings that are consumed during an event that may require detection speeds of hundreds of MHz and in the future multiple GHz.

  14. Optimizing shape uniformity and increasing structure heights of deep reactive ion etched silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Wright, Jonathan; Simons, Hugh

    2015-01-01

    Line-focusing compound silicon x-ray lenses with structure heights exceeding 300 μm were fabricated using deep reactive ion etching. To ensure profile uniformity over the full height, a new strategy was developed in which the perimeter of the structures was defined by trenches of constant width....... The remaining sacrificial material inside the lens cavities was removed by etching through the silicon wafer. Since the wafers become fragile after through-etching, they were then adhesively bonded to a carrier wafer. Individual chips were separated using laser micro machining and the 3D shape of fabricated...... analysis, where a slight bowing of the lens sidewalls and an insufficiently uniform apex region are identified as resolution-limiting factors. Despite these, the proposed fabrication route proved a viable approach for producing x-ray lenses with large structure heights and provides the means to improve...

  15. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  16. Magneto-Optic Fiber Gratings Useful for Dynamic Dispersion Management and Tunable Comb Filtering

    International Nuclear Information System (INIS)

    Bao-Jian, Wu; Xin, Lu; Kun, Qiu

    2010-01-01

    Intelligent control of dispersion management and tunable comb filtering in optical network applications can be performed by using magneto-optic fiber Bragg gratings (MFBGs). When a nonuniform magnetic field is applied to the MFBG with a constant grating period, the resulting grating response is equivalent to that of a conventional chirped grating. Under a linearly nonuniform magnetic field along the grating, a linear dispersion is achieved in the grating bandgap and the maximal dispersion slope can come to 1260 ps/nm 2 for a 10-mm-long fiber grating at 1550 nm window. Similarly, a Gaussian-apodizing sampled MFBG is also useful for magnetically tunable comb filtering, with potential application to clock recovery from return-to-zero optical signals and optical carrier tracking. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. Ultra-low coupling loss fully-etched apodized grating coupler with bonded metal mirror

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm.......A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm....

  18. Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

    2013-01-01

    We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed......, and fabricated in a single step of lithography and etching. An ultralow coupling loss of x2212;1.74x2009;x2009;dB (67% coupling efficiency) with a 3xA0;dB bandwidth of 60xA0;nm is experimentally measured....

  19. Ultra-High-Efficiency Apodized Grating Coupler Using a Fully Etched Photonic Crystal

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2013-01-01

    We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated.......We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated....

  20. Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pallon, J., E-mail: jan.pallon@nuclear.lu.se [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden); Syväjärvi, M. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Wang, Q. [Sensor System, ACREO Swedish ICT AB, Box 1070, SE-164 25 Kista (Sweden); Yakimova, R.; Iakimov, T. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Elfman, M.; Kristiansson, P.; Nilsson, E.J.C.; Ros, L. [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden)

    2016-03-15

    Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

  1. Dynamic 3D strain measurements with embedded micro-structured optical fiber Bragg grating sensors during impact on a CFRP coupon

    Science.gov (United States)

    Goossens, Sidney; Geernaert, Thomas; De Pauw, Ben; Lamberti, Alfredo; Vanlanduit, Steve; Luyckx, Geert; Chiesura, Gabriele; Thienpont, Hugo; Berghmans, Francis

    2017-04-01

    Composite materials are increasingly used in aerospace applications, owing to their high strength-to-mass ratio. Such materials are nevertheless vulnerable to impact damage. It is therefore important to investigate the effects of impacts on composites. Here we embed specialty microstructured optical fiber Bragg grating based sensors inside a carbon fiber reinforced polymer, providing access to the 3D strain evolution within the composite during impact. We measured a maximum strain of -655 μɛ along the direction of impact, and substantially lower values in the two in-plane directions. Such in-situ characterization can trigger insight in the development of impact damage in composites.

  2. Optical Fiber Grating based Sensors

    DEFF Research Database (Denmark)

    Michelsen, Susanne

    2003-01-01

    In this thesis differenct optical fiber gratings are used for sensor purposes. If a fiber with a core concentricity error (CCE) is used, a directional dependent bend sensor can be produced. The CCE direction can be determined by means of diffraction. This makes it possible to produce long......-period gratings in a fiber with a CCE direction parallel or perpendicular to the writing direction. The maximal bending sensitivity is independent on the writing direction, but the detailed bending response is different in the two cases. A temperature and strain sensor, based on a long-period grating and two...... sampled gratings, was produced and investigated. It is based on the different temperature and strain response of these gratings. Both a transfer matrix method and an overlap calculation is performed to explain the sensor response. Another type of sensor is based on tuning and modulation of a laser...

  3. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  4. The equilibrium structures of the 90{sup 0} partial dislocation in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, Alexander; Sutton, A P [Materials Modelling Laboratory, Department of Materials, University of Oxford, OX1 3PH (United Kingdom)

    2005-12-07

    We consider the free energies of the single-period (SP) and double-period (DP) core reconstructions of the straight 90{sup 0} partial dislocation in silicon. The vibrational contributions are calculated with a harmonic model. It is found that it leads to a diminishing difference between the free energies of the two core reconstructions with increasing temperature. The question of the relative populations of SP and DP reconstructions in a single straight 90{sup 0} partial dislocation is solved by mapping the problem onto a one-dimensional Ising model in a magnetic field. The model contains only two parameters and is solved analytically. It leads to the conclusion that for the majority of the published energy differences between the SP and DP reconstructions the equilibrium core structure is dominated by the DP reconstruction at all temperatures up to the melting point. We review whether it is possible to distinguish between the SP and DP reconstructions experimentally, both in principle and in practice. We conclude that aberration corrected transmission electron microscopy should be able to distinguish between these two core reconstructions, but published high resolution micrographs do not allow the distinction to be made.

  5. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  6. Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

    Energy Technology Data Exchange (ETDEWEB)

    Malik Rizwan [State Key Laboratory of Digital Manufacturing Equipment and technology, Huazhong University of Science and Technology, 1037 Luoyu road, Wuhan, China 43007 (China); Shi Tielin; Tang Zirong; Liu Shiyuan, E-mail: zirong@mail.hust.edu.cn, E-mail: rizwanmalik@smail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu road Wuhan, 430074 (China)

    2011-02-01

    Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on 'High Density Plasma Etch Model'. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF{sub 6} remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

  7. Structural and magnetic properties of the nanocomposite materials based on a mesoporous silicon dioxide matrix

    Energy Technology Data Exchange (ETDEWEB)

    Grigor’eva, N. A., E-mail: natali@lns.pnpi.spb.ru [St. Petersburg State University (Russian Federation); Eckerlebe, H. [Helmholtz-Zentrum Geesthacht (Germany); Eliseev, A. A.; Lukashin, A. V.; Napol’skii, K. S. [Moscow State University (Russian Federation); Kraje, M. [Reactor Institute Delft (Netherlands); Grigor’ev, S. V. [St. Petersburg State University (Russian Federation)

    2017-03-15

    The structural and magnetic properties of the mesoporous systems based on silicon dioxide with a regular hexagonal arrangement of pores several microns in length and several nanometers in diameter, which are filled with iron compound nanofilaments in various chemical states, are studied in detail. The studies are performed using the following mutually complementary methods: transmission electron microscopy, SQUID magnetometry, electron spin resonance, Mössbauer spectroscopy, polarized neutron small-angle diffraction, and synchrotron radiation diffraction. It is shown that the iron nanoparticles in pores are mainly in the γ phase of Fe{sub 2}O{sub 3} with a small addition of the α phase and atomic iron clusters. The effective magnetic field acting on a nanofilament from other nanofilaments is 11 mT and has a dipole nature, the ferromagnetic–paramagnetic transition temperature is in the range 76–94 K depending on the annealing temperature of the samples, and the temperature that corresponds to the change in the magnetic state of the iron oxide nanofilaments is T ≈ 50–60 K at H = 0 and T ≈ 80 K at H = 300 mT. It is also shown that the magnetization reversal of an array of nanofilaments is caused by the magnetostatic interaction between nanofilaments at the fields that are lower than the saturation field.

  8. Simple and polarization-independent Dammann grating based on all-dielectric nanorod array

    Science.gov (United States)

    Yang, Sen; Li, Chuang; Liu, Tongming; Da, Haixia; Feng, Rui; Tang, Donghua; Sun, Fangkui; Ding, Weiqiang

    2017-09-01

    In this work, we comprehensively investigate a Dammann grating (DG) that can generate a 5 × 5 diffraction spot array with an extending angle of 18^\\circ × 18^\\circ around the fiber communication wavelength of 1550 {nm}. The DG is a simple metasurface structure composed of a silicon cuboid nanorod array on a silica substrate, and only two different sizes of nanorods with square cross-sections and uniform spatial orientations are used. These simple units and this configuration are favorable in practice, and the C4 symmetry cross section of the nanorods ensures the polarization-independent operation of the DG. The phase modulation of the nanorods is achieved by the guiding mode propagating in them rather than electric or magnetic Mie-type resonance, which makes the design of the cuboid nanorods easy and robust. More importantly, the two-dimensional nanorod array is generated from a one-dimensional array, which further decreases the design and fabrication complexity.

  9. Unraveling Crystalline Structure of High-Pressure Phase of Silicon Carbonate

    Directory of Open Access Journals (Sweden)

    Rulong Zhou

    2014-03-01

    Full Text Available Although CO_{2} and SiO_{2} both belong to group-IV oxides, they exhibit remarkably different bonding characteristics and phase behavior at ambient conditions. At room temperature, CO_{2} is a gas, whereas SiO_{2} is a covalent solid with rich polymorphs. A recent successful synthesis of the silicon-carbonate solid from the reaction between CO_{2} and SiO_{2} under high pressure [M. Santoro et al., Proc. Natl. Acad. Sci. U.S.A. 108, 7689 (2011] has resolved a long-standing puzzle regarding whether a Si_{x}C_{1−x}O_{2} compound between CO_{2} and SiO_{2} exists in nature. Nevertheless, the detailed atomic structure of the Si_{x}C_{1−x}O_{2} crystal is still unknown. Here, we report an extensive search for the high-pressure crystalline structures of the Si_{x}C_{1−x}O_{2} compound with various stoichiometric ratios (SiO_{2}:CO_{2} using an evolutionary algorithm. Based on the low-enthalpy structures obtained for each given stoichiometric ratio, several generic structural features and bonding characteristics of Si and C in the high-pressure phases are identified. The computed formation enthalpies show that the SiC_{2}O_{6} compound with a multislab three-dimensional (3D structure is energetically the most favorable at 20 GPa. Hence, a stable crystalline structure of the elusive Si_{x}C_{1−x}O_{2} compound under high pressure is predicted and awaiting future experimental confirmation. The SiC_{2}O_{6} crystal is an insulator with elastic constants comparable to typical hard solids, and it possesses nearly isotropic tensile strength as well as extremely low shear strength in the 2D plane, suggesting that the multislab 3D crystal is a promising solid lubricant. These valuable mechanical and electronic properties endow the SiC_{2}O_{6} crystal for potential applications in tribology and nanoelectronic devices, or as a stable solid-state form for CO_{2} sequestration.

  10. Method of producing p-i-n structures by compensation of lithium ions from both side of silicon

    International Nuclear Information System (INIS)

    Muminov, R.A.; Radjapov, S.A.; Saymbetov, A.K.; Tursunkulov, O.M.; Pindurin, Yu.S.

    2007-01-01

    Full text: Semiconductor nuclear radiation detectors are needed to solve certain problems in nuclear spectroscopy. The development of efficiency detectors became possible with advances in growing high purify silicon single crystals with the required properties, satisfying the requirements for obtaining detectors based on them. One important requirement for obtaining detectors with sensitive area is that its resistance must be high. This is achieved by using the lithium ion drift process in the volume of the semiconductor detector. Thus it has been developed and created silicon semiconductor nuclear radiation detectors with vide range of diameter of sensitive area up to 100 mm and thickness (from 1mm to 10mm). At present work a new method for producing p-i-n structures was developed to decrease substantially the time required for compensation of silicon by lithium ions and to eliminate at the same time the negative consequences of holding the crystal at a high temperature and under a high voltage. Drift of lithium ions from two ends of prepared samples is conducted to a depth sufficient for the required compensation of the initial acceptor impurity in silicon. The method described above was used to fabricate a batch of Si(Li) detectors with a 1-10 mm thick and 10-110 mm in diameter sensitive region. The thickness of the sensitive region was determined by performing standard measurements and chemical pigmentation. Advantages of detectors are they have improved properties and less time for compensation of lithium ions. (authors)

  11. The Off-plane Grating Rocket Experiment

    Science.gov (United States)

    Donovan, Benjamin

    2018-01-01

    The next generation of X-ray spectrometers necessitate significant increases in both resolution and effective area to achieve the science goals set forth in the 2010 Decadal Survey and the 2013 Astrophysics Roadmap. The Off-plane Grating Rocket Experiment (OGRE), an X-ray spectroscopy suborbital rocket payload currently scheduled for launch in Q3 2020, will serve as a testbed for several key technologies which can help achieve the desired performance increases of future spectrometers. OGRE will be the first instrument to fly mono-crystalline silicon X-ray mirrors developed at NASA Goddard Space Flight Center. The payload will also utilize an array of off-plane gratings manufactured at The Pennsylvania State University. Additionally, the focal plane will be populated with an array of four electron-multiplying CCDs developed by the Open University and XCAM Ltd. With these key technologies, OGRE hopes to achieve the highest resolution on-sky soft X-ray spectrum to date. We discuss the optical design, expected performance, and the current status of the payload.

  12. A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

    Directory of Open Access Journals (Sweden)

    Yi Xiu YANG

    2011-12-01

    Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

  13. Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-12-01

    By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

  14. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  15. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  16. Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

    Directory of Open Access Journals (Sweden)

    Pilipenko V. A.

    2013-05-01

    Full Text Available Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance of the application of gettering in modern microelectronic technology. The existing methods of silicon wafers gettering and the mechanisms of their occurrence are considered.

  17. Effective carrier sweepout in a silicon waveguide by a metal-semiconductor-metal structure

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Ou, Haiyan

    2015-01-01

    We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated.......We demonstrate effective carrier depletion by metal-semiconductor-metal junctions for a silicon waveguide. Photo-generated carriers are efficiently swept out by applying bias voltages, and a shortest carrier lifetime of only 55 ps is demonstrated....

  18. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  19. Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing

    International Nuclear Information System (INIS)

    Gelloz, Bernard; Koshida, Nobuyoshi

    2010-01-01

    The effects of high-pressure water vapor annealing (HWA), electrochemical oxidation, and substrate resistivity on the properties of porous silicon Bragg mirrors and photoluminescent cavities have been investigated. The photonic structures treated by HWA show very good stability upon ageing in air whereas as-formed structures exhibit significant drifts in their optical properties. Using HWA with lightly doped porous silicon, the structure transparency is enhanced sufficiently to enable the possible photonic operation in the near-ultraviolet. However, the index contrast achievable with these structures is very low in the visible and near-infrared. Useful index contrasts in this range can be achieved with either lightly doped porous silicon treated by electrochemical oxidation and HWA or heavily doped porous silicon treated by HWA.

  20. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  1. System Construction for the Measurement of Bragg Grating Characteristics in Optical Fibers

    Science.gov (United States)

    West, Douglas P.

    1995-01-01

    Bragg gratings are used to measure strain in optical fibers. To measure strain they are sometimes used as a smart structure. They must be characterized after they are written to determine their spectral response. This paper deals with the test setup to characterize Bragg grating spectral responses.Bragg gratings are a photo-induced phenomena in optical fibers. The gratings can be used to measure strain by measuring the shift in wavelength. They placed the fibers into a smart structure to measure the stress and strain produced on support columns placed in bridges. As the cable is subjected to strain the grating causes a shift to a longer wavelength if the fiber is stretched and a shift to a shorter wavelength shift if the fiber is compacted. Our applications involve using the fibers to measure stress and strain on airborne systems. There are many ways to write Bragg gratings into optical fibers. Our focus is on side writing the grating. Our capabilities are limited in the production rate of the gratings. The Bragg grating is written into a fiber and becomes a permanent fixture. We are writing the grating to be centered at 1300 nm because that is the standard phase mask wavelength.

  2. Fabrication of 200 nanometer period centimeter area hard x-ray absorption gratings by multilayer deposition

    Science.gov (United States)

    Lynch, S K; Liu, C; Morgan, N Y; Xiao, X; Gomella, A A; Mazilu, D; Bennett, E E; Assoufid, L; de Carlo, F; Wen, H

    2012-01-01

    We describe the design and fabrication trials of x-ray absorption gratings of 200 nm period and up to 100:1 depth-to-period ratios for full-field hard x-ray imaging applications. Hard x-ray phase-contrast imaging relies on gratings of ultra-small periods and sufficient depth to achieve high sensitivity. Current grating designs utilize lithographic processes to produce periodic vertical structures, where grating periods below 2.0 μm are difficult due to the extreme aspect ratios of the structures. In our design, multiple bilayers of x-ray transparent and opaque materials are deposited on a staircase substrate, and mostly on the floor surfaces of the steps only. When illuminated by an x-ray beam horizontally, the multilayer stack on each step functions as a micro-grating whose grating period is the thickness of a bilayer. The array of micro-gratings over the length of the staircase works as a single grating over a large area when continuity conditions are met. Since the layers can be nanometers thick and many microns wide, this design allows sub-micron grating periods and sufficient grating depth to modulate hard x-rays. We present the details of the fabrication process and diffraction profiles and contact radiography images showing successful intensity modulation of a 25 keV x-ray beam. PMID:23066175

  3. Study of the Adsorption of Atoms and Molecules on Silicon Surfaces: Crystallographics and Electronic Structure

    International Nuclear Information System (INIS)

    Bengio, Silvina

    2003-01-01

    This thesis work has been concerned with adsorption properties of silicon surfaces.The atomic and electronic structure of molecules and atoms adsorbed on Si has been investigated by means of photoemission experiments combined with synchrotron radiation.The quantitative atomic structure determination was held applying the photoelectron diffraction technique.This technique is sensible to the local structure of a reference atomic specie and has elemental and chemical-state specificity.This approach has been applied to three quite different systems with different degrees of complexity, Sb/Si(111) √3x √3R30 0 , H 2 O/Si(100)2x1 and NH 3 /Si(111)7x7.Our results show that Sb which forms a ( √3√3)R30 0 phase produces a bulklike-terminated Si(111)1x1 substrate free of stacking faults.Regarding the atomic structure of its interface, this study strongly favours the T4-site milkstool model over the H3 one.An important aspect regarding the H 2 O/Si(100)(2x1) system was establishing the limits of precision with which one can determine not only the location of the adsorbed hydroxyl (OH) species, but also the extent to which this adsorption modifes the asymmetric dimers of the clean surface to which it is bonded.On the Si(111)(7x7) surface the problem is particularly complex because there are several different potentially active sites for NH3 adsorption and fragmentation.The application of the PhD method, however, has shown that the majority of the N atoms are on so-called 'rest atom' sites when deposited at RT.This is consistent with the N in the NH2 chemical state.This investigation represents the first quantitative structural study of any molecular adsorbate on the complex Si(111)(7x7) surface.This atomic structures determination shows the PhD is a powerful tool for the atomic structure determination.The molecular systems interacting with the active sites of the substrate fragments producing a short-range order surface.This long-range disorder is produced by the

  4. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.; Kamaev, G. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Purkrt, A.; Remes, Z. [Institute of Physics ASCR (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR (Czech Republic); Stuchliková, T. H.; Stuchlik, J. [Institute of Physics ASCR (Czech Republic)

    2016-07-15

    Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

  5. Spectroscopic ellipsometry on metallic gratings and the energy density in absorbing media

    International Nuclear Information System (INIS)

    Bergmair, M.

    2011-01-01

    Many researchers have stated that the 20th century was the century of electrons but the present one will be the century of the photon. Optics has a long history but in the context of nanooptics and nanophotonics this statement is already proven in the first decade. Improved fabrication facilities and technologies have allowed researches and industry to model light by micro and nano structures like photonic crystals, gratings, wave couplers and in past years also negative index materials. As the feature sizes of the artificial structures, which are all summarized as metamaterials, determine the operation frequencies a miniaturization is necessary for the run towards smaller wavelengths, e.g. negative index materials working in the visible range. This thesis deals with spectroscopic ellipsometry (SE) applied for the investigation of metallic gratings. SE is fast, non-invasive and non-destructive and the spectra of stratified layers are easily compared with theoretical simulations. For diffracting systems, rigorous coupled wave analysis (RCWA) which is rigorous in the sense that for a large enough number of Fourier coefficients all diffraction orders are derived exactly, is used as numerical solver for the Maxwell equations. Metallic gratings are simple structures with only a few geometrical parameters and the comparison between theoretical and experimental spectra provide a useful basis for more complicated metamaterials like e.g. negative index materials. Further, the metallic grating supports the excitation of surface plasmons. Due to the periodic structure an additional momentum transfer is provided which is necessary to excite surface plamsons with incident light. These excitation frequencies are clearly visible in the ellipsometric spectra due to a phase shift between s- and p- polarization. Therefore in the first part silicon, gold and silver gratings are analyzed with respect to their geometrical and material parameters and measured and simulated spectra are

  6. Modelling of the hydrogen effects on the morphogenesis of hydrogenated silicon nano-structures in a plasma reactor

    International Nuclear Information System (INIS)

    Brulin, Q.

    2006-01-01

    This work pursues the goal of understanding mechanisms related to the morphogenesis of hydrogenated silicon nano-structures in a plasma reactor through modeling techniques. Current technologies are first reviewed with an aim to understand the purpose behind their development. Then follows a summary of the possible studies which are useful in this particular context. The various techniques which make it possible to simulate the trajectories of atoms by molecular dynamics are discussed. The quantum methods of calculation of the interaction potential between chemical species are then developed, reaching the conclusion that only semi-empirical quantum methods are sufficiently fast to be able to implement an algorithm of quantum molecular dynamics on a reasonable timescale. From the tools introduced, a reflection on the nature of molecular metastable energetic states is presented for the theoretical case of the self-organized growth of a linear chain of atoms. This model - which consists of propagating the growth of a chain by the successive addition of the atom which least increases the electronic energy of the chain - shows that the Fermi level is a parameter essential to self organization during growth. This model also shows that the structure formed is not necessarily a total minimum energy structure. From all these numerical tools, the molecular growth of clusters can be simulated by using parameters from magnetohydrodynamic calculation results of plasma reactor modeling (concentrations of the species, interval between chemical reactions, energy of impact of the reagents...). The formation of silicon-hydrogen clusters is thus simulated by the successive capture of silane molecules. The structures formed in simulation at the operating temperatures of the plasma reactor predict the formation of spherical clusters constituting an amorphous silicon core covered by hydrogen. These structures are thus not in a state of minimum energy, contrary to certain experimental

  7. Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

    International Nuclear Information System (INIS)

    Cho, Y; Kumar, A; Xu, S; Zou, J

    2016-01-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

  8. Polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating

    Science.gov (United States)

    Hohne, Andrew J.; Moon, Benjamin; Baumbauer, Carol L.; Gray, Tristan; Dilts, James; Shaw, Joseph A.; Dickensheets, David L.; Nakagawa, Wataru

    2017-08-01

    We present the design, fabrication, and characterization of a polarization-selective infrared bandpass filter based on a two-layer subwavelength metallic grating for use in polarimetric imaging. Gold nanowires were deposited via physical vapor deposition (PVD) onto a silicon surface relief grating that was patterned using electron beam lithography (EBL) and fabricated using standard silicon processing techniques. Optical characterization with a broad-spectrum tungsten halogen light source and a grating spectrometer showed normalized peak TM transmission of 53% with a full-width at half-maximum (FWHM) of 122 nm, which was consistent with rigorous coupled-wave analysis (RCWA) simulations. Simulation results suggested that device operation relied on suppression of the TM transmission caused by surface plasmon polariton (SPP) excitation at the gold-silicon interface and an increase in TM transmission caused by a Fabry-Perot (FP) resonance in the cavity between the gratings. TE rejection occurred at the initial air/gold interface. We also present simulation results of an improved design based on a two-dielectric grating where two different SPP resonances allowed us to improve the shape of the passband by suppressing the side lobes. This newer design resulted in improved side-band performance and increased peak TM transmission.

  9. Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Kirsanov, N. Yu.; Latukhina, N. V., E-mail: natalat@yandex.ru; Lizunkova, D. A.; Rogozhina, G. A. [Samara National Research University (Russian Federation); Stepikhova, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2017-03-15

    The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 μm is higher than in structures free of REEs. The structures with Er{sup 3+} ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 μm. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the {sup 4}I{sub 15/2} multiplet of the Er{sup 3+} ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 μm).

  10. Photonic Structures for Light Trapping in Thin Film Silicon Solar Cells: Design and Experiment

    Directory of Open Access Journals (Sweden)

    Yi Ding

    2017-12-01

    Full Text Available One of the foremost challenges in designing thin-film silicon solar cells (TFSC is devising efficient light-trapping schemes due to the short optical path length imposed by the thin absorber thickness. The strategy relies on a combination of a high-performance back reflector and an optimized texture surface, which are commonly used to reflect and scatter light effectively within the absorption layer, respectively. In this paper, highly promising light-trapping structures based on a photonic crystal (PC for TFSCs were investigated via simulation and experiment. Firstly, a highly-reflective one-dimensional photonic crystal (1D-PC was designed and fabricated. Then, two types of 1D-PC-based back reflectors (BRs were proposed: Flat 1D-PC with random-textured aluminum-doped zinc oxide (AZO or random-textured 1D-PC with AZO. These two newly-designed BRs demonstrated not only high reflectivity and sufficient conductivity, but also a strong light scattering property, which made them efficient candidates as the electrical contact and back reflector since the intrinsic losses due to the surface plasmon modes of the rough metal BRs can be avoided. Secondly, conical two-dimensional photonic crystal (2D-PC-based BRs were investigated and optimized for amorphous a-SiGe:H solar cells. The maximal absorption value can be obtained with an aspect ratio of 1/2 and a period of 0.75 µm. To improve the full-spectral optical properties of solar cells, a periodically-modulated PC back reflector was proposed and experimentally demonstrated in the a-SiGe:H solar cell. This periodically-modulated PC back reflector, also called the quasi-crystal structure (QCS, consists of a large periodic conical PC and a randomly-textured Ag layer with a feature size of 500–1000 nm. The large periodic conical PC enables conformal growth of the layer, while the small feature size of Ag can further enhance the light scattering. In summary, a comprehensive study of the design, simulation

  11. Synthesis, characterization and electrochemical performance of core/shell structured carbon coated silicon powders for lithium ion battery negative electrodes

    Directory of Open Access Journals (Sweden)

    Tuğrul Çetinkaya

    2017-06-01

    Full Text Available Surface of nano silicon powders were coated with amorphous carbon by pyrolysis of polyacronitrile (PAN polymer. Microstructural characterization of amorphous carbon coated silicon powders (Si-C were carried out using scanning electron microscopy (SEM and thickness of carbon coating is defined by transmission electron microscopy (TEM. Elemental analyses of Si-C powders were performed using energy dispersive X-ray spectroscopy (EDS. Structural and phase characterization of Si-C composite powders were investigated using X-ray diffractometer (XRD and Raman spectroscopy. Produced Si-C powders were prepared as an electrode on the copper current collector and electrochemical tests were carried out using CR2016 button cells at 200 mA/g constant current density. According to electrochemical test results, carbon coating process enhanced the electrochemical performance by reducing the problems stem from volume change and showed 770 mAh/g discharge capacity after 30 cycles.

  12. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  13. Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

    2015-01-01

    This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors...... of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall...

  14. Silicon/Wolfram Carbide@Graphene composite: enhancing conductivity and structure stability in amorphous-silicon for high lithium storage performance

    International Nuclear Information System (INIS)

    Sun, Wei; Hu, Renzong; Liu, Hui; Zhang, Hanying; Liu, Jiangwen; Yang, Lichun; Wang, Haihui; Zhu, Min

    2016-01-01

    Highlights: • Two-step ball milling was used to produce an amorphous-Si/WC@Graphene(SW@G) composite. • Concrete-like core-shell structure with high stability was designed. • Multiscale WC particle strengthen the inside structure. • Graphene coating outside much enhanced the cycling stability and conductivity. • The SW@G anode exhibited long cycle life and superior volumetric capacity. - Abstract: Improving the electron conductivity and lithiated structure stability for Si anodes can result in high stable capacity in cells. A Silicon/Wolfram Carbide@Graphene (SW@G) composite anode is designed and produced by a simple two-step ball milling the mixture of coarse-grained Si with good conductive wolfram carbide (WC) and graphite. The SW@G composite consists of multiple-scale WC particles, which are uniformly distributed in amorphous Si matrices, and wrapped by graphene nanosheets (GNs) on the outside. Owing to the unique concrete-like core-shell structure, the wrapping of GNs on the Si improves the conductivity and structural stability of the composite. The inner WC particles which tightly connect the Si and graphene act as the cornerstone to resist large volumetric expansion of Si during charge/discharge, and in particular serve as the high-speed channels of electrons as well as provide more interface paths for Li + to accelerate their transfer inside the Si. These contribute to the excellent electrochemical properties of SW@G composite anode, including high volumetric capacity (three times higher than that of graphite), superior rate capability, and long-life stable cycleability. The synthetic method developed in this work paves the way for large-scale manufacturing of high performance Li storage anodes using commercially available materials and technologies.

  15. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    International Nuclear Information System (INIS)

    Mashin, A.I.; Khokhlov, A.F.; Mashin, N.I.; Domashevskaya, Eh.P.; Terekhov, V.A.

    2001-01-01

    SiK β and SiL 23 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (α-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL 23 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and α-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK β emission spectrum is observed. This difference of shapes of X-ray spectra between α-Si:H and silicyne is explained by the presence in silicyne a strong π-component of chemical bonds of a silicon atoms in silicyne [ru

  16. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    CERN Document Server

    Mashin, A I; Mashin, N I; Domashevskaya, E P; Terekhov, V A

    2001-01-01

    SiK subbeta and SiL sub 2 sub 3 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (alpha-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL sub 2 sub 3 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and alpha-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK subbeta emission spectrum is observed. This difference of shapes of X-ray spectra between alpha-Si:H and silicyne is explained by the presence in silicyne a strong pi-component of chemical bonds of a silicon atoms in silicyne

  17. Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

    International Nuclear Information System (INIS)

    Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

    2016-01-01

    Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

  18. High efficiency multilayer blazed gratings for EUV and soft X-rays: Recent developments

    International Nuclear Information System (INIS)

    Voronov, Dmitriy; Ahn, Minseung; Anderson, Erik; Cambie, Rossana; Chang, Chih-Hao; Goray, Leonid; Gullikson, Eric; Heilmann, Ralf; Salmassi, Farhad; Schattenburg, Mark; Warwick, Tony; Yashchuk, Valeriy; Padmore, Howard

    2011-01-01

    Multilayer coated blazed gratings with high groove density are the best candidates for use in high resolution EUV and soft x-ray spectroscopy. Theoretical analysis shows that such a grating can be potentially optimized for high dispersion and spectral resolution in a desired high diffraction order without significant loss of diffraction efficiency. In order to realize this potential, the grating fabrication process should provide a perfect triangular groove profile and an extremely smooth surface of the blazed facets. Here we report on recent progress achieved at the Advanced Light Source (ALS) in fabrication of high quality multilayer coated blazed gratings. The blazed gratings were fabricated using scanning beam interference lithography followed by wet anisotropic etching of silicon. A 200 nm period grating coated with a Mo/Si multilayer composed with 30 bi-layers demonstrated an absolute efficiency of 37.6percent in the 3rd diffraction order at 13.6 nm wavelength. The groove profile of the grating was thoroughly characterized with atomic force microscopy before and after the multilayer deposition. The obtained metrology data were used for simulation of the grating efficiency with the vector electromagnetic PCGrate-6.1 code. The simulations showed that smoothing of the grating profile during the multilayer deposition is the main reason for efficiency losses compared to the theoretical maximum. Investigation of the grating with cross-sectional transmission electron microscopy revealed a complex evolution of the groove profile in the course of the multilayer deposition. Impact of the shadowing and smoothing processes on growth of the multilayer on the surface of the sawtooth substrate is discussed.

  19. Holographic grating relaxation technique for soft matter science

    Energy Technology Data Exchange (ETDEWEB)

    Lesnichii, Vasilii, E-mail: vasilii.lesnichii@physchem.uni-freiburg.de [Institute of Physical Chemistry, Albertstraße 21, Institute of Macromolecular Chemistry, Stefan-Meier-Str. 31, Albert-Ludwigs Universität, Freiburg im Breisgau 79104 (Germany); ITMO University, Kronverksky prospekt 49, Saint-Petersburg 197101 (Russian Federation); Kiessling, Andy [Institute of Physical Chemistry, Albertstraße 21, Institute of Macromolecular Chemistry, Stefan-Meier-Str. 31, Albert-Ludwigs Universität, Freiburg im Breisgau 79104 (Germany); Current address: Illinois Institute of Technology, 10 West 33rd Street, Chicago,IL60616 (United States); Bartsch, Eckhard [Institute of Physical Chemistry, Albertstraße 21, Institute of Macromolecular Chemistry, Stefan-Meier-Str. 31, Albert-Ludwigs Universität, Freiburg im Breisgau 79104 (Germany); Veniaminov, Andrey, E-mail: veniaminov@phoi.ifmo.ru [ITMO University, Kronverksky prospekt 49, Saint-Petersburg 197101 (Russian Federation)

    2016-06-17

    The holographic grating relaxation technique also known as forced Rayleigh scattering consists basically in writing a holographic grating in the specimen of interest and monitoring its diffraction efficiency as a function of time, from which valuable information on mass or heat transfer and photoinduced transformations can be extracted. In a more detailed view, the shape of the relaxation curve and the relaxation rate as a function of the grating period were found to be affected by the architecture of diffusing species (molecular probes) that constitute the grating, as well as that of the environment they diffuse in, thus making it possible to access and study spatial heterogeneity of materials and different modes of e.g., polymer motion. Minimum displacements and spatial domains approachable by the technique are in nanometer range, well below spatial periods of holographic gratings. In the present paper, several cases of holographic relaxation in heterogeneous media and complex motions are exemplified. Nano- to micro-structures or inhomogeneities comparable in spatial scale with holographic gratings manifest themselves in relaxation experiments via non-exponential decay (stepwise or stretched), spatial-period-dependent apparent diffusion coefficient, or unusual dependence of diffusion coefficient on molecular volume of diffusing probes.

  20. Structural and luminescence properties of silicon nanocrystals in colloidal solutions for bio applications

    Czech Academy of Sciences Publication Activity Database

    Herynková, Kateřina; Vorkotter, C.; Šimáková, Petra; Benedikt, J.; Cibulka, Ondřej

    2016-01-01

    Roč. 213, č. 11 (2016), s. 2873-2878 ISSN 1862-6300. [Spring Conference of the European-Materials-Research-Society (E-MRS). Lille, 02.05.2016-06.05.2016] Grant - others:AV ČR(CZ) DAAD-16-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : silicon nanoparticles * porous silicon * colloidal solutions * surface modification * low- pressure microwave plasma synthesis Subject RIV: BO - Biophysics Impact factor: 1.775, year: 2016

  1. Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

    Science.gov (United States)

    Morishita, Tetsuya

    2009-05-21

    We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

  2. On the nature of structural disorder in calcium silicate hydrates with a calcium/silicon ratio similar to tobermorite

    Energy Technology Data Exchange (ETDEWEB)

    Grangeon, Sylvain, E-mail: S.Grangeon@brgm.fr [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Claret, Francis; Lerouge, Catherine [BRGM, 3, Avenue Claude Guillemin, 45060 Orléans Cedex 2 (France); Warmont, Fabienne [CRMD, UMR 6619 – CNRS, 1b rue de la férollerie, 45071 Orléans Cedex 2 (France); Sato, Tsutomu; Anraku, Sohtaro [Laboratory of Environmental Geology, Research Group of Geoenvironmental/Engineering Division of Solid Waste, Resources and Geoenvironmental/Engineering Graduate School of Engineering, Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628 (Japan); Numako, Chiya [Faculty of Integrated Arts and Sciences, The University of Tokushima, 1-1, Minami-Josanjima, Tokushima, 770-8502 (Japan); Linard, Yannick [ANDRA, Centre de Meuse/Haute Marne, 55290 Bure (France); Lanson, Bruno [ISTerre, Grenoble University, CNRS, F-38041 Grenoble (France)

    2013-10-15

    Four calcium silicate hydrates (C-S-H) with structural calcium/silicon (Ca/Si) ratios ranging from 0.82 ± 0.02 to 0.87 ± 0.02 were synthesized at room temperature, 50, 80, and 110 °C. Their structure was elucidated by collating information from electron probe micro-analysis, transmission electron microscopy, extended X-ray absorption fine structure spectroscopy, and powder X-ray diffraction (XRD). A modeling approach specific to defective minerals was used because sample turbostratism prevented analysis using usual XRD refinement techniques (e.g. Rietveld analysis). It is shown that C-S-H with Ca/Si ratio of ∼ 0.8 are structurally similar to nano-crystalline turbostratic tobermorite, a naturally occurring mineral. Their structure thus consists of sheets of calcium atoms in 7-fold coordination, covered by ribbons of silicon tetrahedra with a dreierketten (wollastonite-like) organization. In these silicate ribbons, 0.42 Si per bridging tetrahedron are missing. Random stacking faults occur systematically between successive layers (turbostratic stacking). Layer-to-layer distance is equal to 11.34 Å. Crystallites have a mean size of 10 nm in the a–b plane, and a mean number of 2.6–2.9 layers stacked coherently along the c* axis.

  3. Mechanical Stresses Induced by Compression in Castings of the Load-carrying Grate

    Directory of Open Access Journals (Sweden)

    Słowik J.

    2016-06-01

    Full Text Available The main aim of this study was to examine the compression-induced state of stress arising in castings of the guide grates during operation in pusher-type furnaces for heat treatment. The effect of grate compression is caused by its forced movement in the furnace. The introduction of flexible segments to the grate structure changes in a significant way the stress distribution, mainly by decreasing its value, and consequently considerably extends the lifetime of the grates. The stress distribution was examined in the grates with flexible segments arranged crosswise (normal to the direction of the grate compression and lengthwise (following the direction of force. A regression equation was derived to describe the relationship between the stress level in a row of ribs in the grate and the number of flexible segments of a lengthwise orientation placed in this row. It was found that, regardless of the distribution of the flexible segments in a row, the stress values were similar in all the ribs included in this row, and in a given row of the ribs/flexible segments a similar state of stress prevailed, irrespective of the position of this row in the whole structure of the grate and of the number of the ribs/flexible segments introduced therein. Parts of the grate responsible for the stress transfer were indicated and also parts which play the role of an element bonding the structure.

  4. Terahertz bandwidth photonic Hilbert transformers based on synthesized planar Bragg grating fabrication.

    Science.gov (United States)

    Sima, Chaotan; Gates, J C; Holmes, C; Mennea, P L; Zervas, M N; Smith, P G R

    2013-09-01

    Terahertz bandwidth photonic Hilbert transformers are proposed and experimentally demonstrated. The integrated device is fabricated via a direct UV grating writing technique in a silica-on-silicon platform. The photonic Hilbert transformer operates at bandwidths of up to 2 THz (~16 nm) in the telecom band, a 10-fold greater bandwidth than any previously reported experimental approaches. Achieving this performance requires detailed knowledge of the system transfer function of the direct UV grating writing technique; this allows improved linearity and yields terahertz bandwidth Bragg gratings with improved spectral quality. By incorporating a flat-top reflector and Hilbert grating with a waveguide coupler, an ultrawideband all-optical single-sideband filter is demonstrated.

  5. Large-Area Binary Blazed Grating Coupler between Nanophotonic Waveguide and LED

    Directory of Open Access Journals (Sweden)

    Hongqiang Li

    2014-01-01

    Full Text Available A large-area binary blazed grating coupler for the arrayed waveguide grating (AWG demodulation integrated microsystem on silicon-on-insulator (SOI was designed for the first time. Through the coupler, light can be coupled into the SOI waveguide from the InP-based C-band LED for the AWG demodulation integrated microsystem to function. Both the length and width of the grating coupler are 360 μm, as large as the InP-based C-band LED light emitting area in the system. The coupler was designed and optimized based on the finite difference time domain method. When the incident angle of the light source is 0°, the coupling efficiency of the binary blazed grating is 40.92%, and the 3 dB bandwidth is 72 nm at a wavelength of 1550 nm.

  6. The effect of aberrated recording beams on reflecting Bragg gratings

    Science.gov (United States)

    SeGall, Marc; Ott, Daniel; Divliansky, Ivan; Glebov, Leonid B.

    2013-03-01

    The effect of aberrations present in the recording beams of a holographic setup is discussed regarding the period and spectral response of a reflecting volume Bragg grating. Imperfect recording beams result in spatially varying resonant wavelengths and the side lobes of the spectrum are washed out. Asymmetrical spectra, spectral broadening, and a reduction in peak diffraction efficiency may also be present, though these effects are less significant for gratings with wider spectral widths. Reflecting Bragg gratings (RBGs) are used as elements in a variety of applications including spectral beam combining1,2, mode locking3,4, longitudinal and transverse mode selection in lasers5,6, and sensing7,8. For applications requiring narrow spectral selectivity9, or large apertures10, these gratings must have a uniform period throughout the length of the recording medium, which may be on the order of millimeters. However, when using typical recording techniques such as two-beam interference for large aperture gratings and phase-mask recording of fiber gratings, aberrations from the optical elements in the system result in an imperfect grating structure11-13. In this paper we consider the effects of aberrations on large aperture gratings recorded in thick media using the two-beam interference technique. Previous works in analyzing the effects of aberrations have considered the effects of aberrations in a single recording plane where the beams perfectly overlap. Such an approach is valid for thin media (on the order of tens of microns), but for thick recording media (on the order of several millimeters) there will be a significant shift in the positions of the beams relative to each other as they traverse the recording medium. Therefore, the fringe pattern produced will not be constant throughout the grating if one or both beams have a non-uniform wavefront. Such non-uniform gratings may have a wider spectral width, a shifted resonant wavelength, or other problems. It is

  7. Optical and x-ray alignment approaches for off-plane reflection gratings

    Science.gov (United States)

    Allured, Ryan; Donovan, Benjamin D.; DeRoo, Casey T.; Marlowe, Hannah R.; McEntaffer, Randall L.; Tutt, James H.; Cheimets, Peter N.; Hertz, Edward; Smith, Randall K.; Burwitz, Vadim; Hartner, Gisela; Menz, Benedikt

    2015-09-01

    Off-plane reflection gratings offer the potential for high-resolution, high-throughput X-ray spectroscopy on future missions. Typically, the gratings are placed in the path of a converging beam from an X-ray telescope. In the off-plane reflection grating case, these gratings must be co-aligned such that their diffracted spectra overlap at the focal plane. Misalignments degrade spectral resolution and effective area. In-situ X-ray alignment of a pair of off-plane reflection gratings in the path of a silicon pore optics module has been performed at the MPE PANTER beamline in Germany. However, in-situ X-ray alignment may not be feasible when assembling all of the gratings required for a satellite mission. In that event, optical methods must be developed to achieve spectral alignment. We have developed an alignment approach utilizing a Shack-Hartmann wavefront sensor and diffraction of an ultraviolet laser. We are fabricating the necessary hardware, and will be taking a prototype grating module to an X-ray beamline for performance testing following assembly and alignment.

  8. Effect of silicon on the structure, tribological behaviour, and mechanical properties of nitrogen-containing chromium-manganese austenitic steels

    International Nuclear Information System (INIS)

    Korshunov, L.G.; Chernenko, N.L.; Gojkhenberg, Yu.N.

    2003-01-01

    The effect of silicon in quantity of 3.5-4.5 mass. % on tribological behaviour is studied for nitrogen-bearing (0.20-0.52 mass. % of nitrogen) chromium-manganese austenitic steels (10Kh15G23S4A0.20, 10Kh16G17N3S4A0.30, 10Kh19G20NS4A0.50, 12Kh19G19NS2A0.50, 10Kh18G19A0.50, 08Kh16G8N10S4A0.18). Mechanical properties and corrosion resistance of the steels are determined. Using metallographic, x-ray diffraction and electron microscopical methods a study is made into structural transformations running in the steels considered under friction and static tension. It is shown that additional silicon alloying of nitrogen-bearing chromium-manganese austenitic steels results in an essential increase of adhesion wear resistance of the materials on retention of low friction coefficient (f=0.25-0.33). A strong silicon effect on steel tribological behaviour is related with planar slip activation and with an increase of austenite strength and heat resistance [ru

  9. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  10. An optical tunable filter array based on LCOS phase grating

    Science.gov (United States)

    Feng, Dong; Wan, Zhujun; Chen, Xu; Yan, Shijia; Luo, Zhixiang

    2018-01-01

    This paper reports an optical tunable filter array (TFA) based on a LCOS (liquid crystal on silicon) chip. The input broadband optical beam is first dispersed by a bulk grating and then incident on the LCOS chip. The LCOS chip is phase-only modulated and constructed as a dynamic reflective phase grating. The phase modulation is adjusted to meet the Littrow angle for a specified passband wavelength and thus the optical beam corresponding to this wavelength is steered to the output. The input/output optical beams are coupled to optical fibers with a dual-fiber collimator. Four dualfiber collimators are vertically aligned as the inputs/outputs and the pixels of the LCOS chip are vertically allocated as four independent zones. Thus the device can act as a 4-channel TFA, which is assembled and functionally demonstrated.

  11. Fiber Bragg grating sensor interrogators on chip: challenges and opportunities

    Science.gov (United States)

    Marin, Yisbel; Nannipieri, Tiziano; Oton, Claudio J.; Di Pasquale, Fabrizio

    2017-04-01

    In this paper we present an overview of the current efforts towards integration of Fiber Bragg Grating (FBG) sensor interrogators. Different photonic integration platforms will be discussed, including monolithic planar lightwave circuit technology, silicon on insulator (SOI), indium phosphide (InP) and gallium arsenide (GaAs) material platforms. Also various possible techniques for wavelength metering and methods for FBG multiplexing will be discussed and compared in terms of resolution, dynamic performance, multiplexing capabilities and reliability. The use of linear filters, array waveguide gratings (AWG) as multiple linear filters and AWG based centroid signal processing techniques will be addressed as well as interrogation techniques based on tunable micro-ring resonators and Mach-Zehnder interferometers (MZI) for phase sensitive detection. The paper will also discuss the challenges and perspectives of photonic integration to address the increasing requirements of several industrial applications.

  12. Optimization of the Surface Structure on Black Silicon for Surface Passivation.

    Science.gov (United States)

    Jia, Xiaojie; Zhou, Chunlan; Wang, Wenjing

    2017-12-01

    Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al 2 O 3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH 4 OH/H 2 O 2 /H 2 O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.

  13. Covalently Attached Organic Monolayers onto Silicon Carbide from 1-Alkynes: Molecular Structure and Tribological Properties

    NARCIS (Netherlands)

    Pujari, S.P.; Scheres, L.M.W.; Weidner, T.; Baio, J.E.; Cohen Stuart, M.A.; Rijn, van C.J.M.; Zuilhof, H.

    2013-01-01

    In order to achieve improved tribological and wear properties at semiconductor interfaces, we have investigated the thermal grafting of both alkylated and fluorine-containing ((CxF2x+1)–(CH2)n-) 1-alkynes and 1-alkenes onto silicon carbide (SiC). The resulting monolayers display static water contact

  14. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  15. Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

    2004-01-01

    Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

  16. Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

    International Nuclear Information System (INIS)

    Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

    1999-01-01

    Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

  17. An original architectured NiTi silicone rubber structure for biomedical applications

    Czech Academy of Sciences Publication Activity Database

    Rey, T.; Le Cam, J.B.; Chagnon, G.; Favier, D.; Rebouah, M.; Razan, F.; Robin, E.; Didier, P.; Heller, Luděk; Faure, S.; Janouchová, Kateřina

    2014-01-01

    Roč. 45, Dec (2014), s. 184-190 ISSN 0928-4931 Institutional support: RVO:68378271 Keywords : adhesion * interface * NiTi * filled silicone rubber * biomedical applications * architectured composite Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.088, year: 2014

  18. Internal structure of mixed phase hydrogenated silicon thin films made at 39 degrees

    Czech Academy of Sciences Publication Activity Database

    Bronsveld, P.C.P.; Rath, J.K.; Schropp, R.E.I.; Mates, Tomáš; Fejfar, Antonín; Rezek, Bohuslav; Kočka, Jan

    2006-01-01

    Roč. 89, - (2006), 051922/1-051922/3 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100521 Keywords : transmission electron microscope * atomic force microscope * silicon films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.977, year: 2006

  19. Free-standing GaN grating couplers and rib waveguide for planar photonics at telecommunication wavelength

    Science.gov (United States)

    Liu, Qifa; Wang, Wei

    2018-01-01

    Gallium Nitride (GaN) free-standing planar photonic device at telecommunication wavelength based on GaN-on-silicon platform was presented. The free-standing structure was realized by particular double-side fabrication process, which combining GaN front patterning, Si substrate back releasing and GaN slab etching. The actual device parameters were identified via the physical characterizations employing scanning electron microscope (SEM), atomic force microscope (AFM) and reflectance spectra testing. High coupling efficiency and good light confinement properties of the gratings and rib waveguide at telecommunication wavelength range were verified by finite element method (FEM) simulation. This work illustrates the potential of new GaN photonic structure which will enable new functions for planar photonics in communication and sensing applications, and is favorable for the realization of integrated optical circuit.

  20. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

    Science.gov (United States)

    Kiaee, Zohreh; Joo, Seung Ki

    2018-03-01

    The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.