Steam generator tube rupture simulation using extended finite element method

Energy Technology Data Exchange (ETDEWEB)

Mohanty, Subhasish, E-mail: smohanty@anl.gov; Majumdar, Saurin; Natesan, Ken

2016-08-15

Highlights: • Extended finite element method used for modeling the steam generator tube rupture. • Crack propagation is modeled in an arbitrary solution dependent path. • The FE model is used for estimating the rupture pressure of steam generator tubes. • Crack coalescence modeling is also demonstrated. • The method can be used for crack modeling of tubes under severe accident condition. - Abstract: A steam generator (SG) is an important component of any pressurized water reactor. Steam generator tubes represent a primary pressure boundary whose integrity is vital to the safe operation of the reactor. SG tubes may rupture due to propagation of a crack created by mechanisms such as stress corrosion cracking, fatigue, etc. It is thus important to estimate the rupture pressures of cracked tubes for structural integrity evaluation of SGs. The objective of the present paper is to demonstrate the use of extended finite element method capability of commercially available ABAQUS software, to model SG tubes with preexisting flaws and to estimate their rupture pressures. For the purpose, elastic–plastic finite element models were developed for different SG tubes made from Alloy 600 material. The simulation results were compared with experimental results available from the steam generator tube integrity program (SGTIP) sponsored by the United States Nuclear Regulatory Commission (NRC) and conducted at Argonne National Laboratory (ANL). A reasonable correlation was found between extended finite element model results and experimental results.

Steam generator tube rupture simulation using extended finite element method

International Nuclear Information System (INIS)

Mohanty, Subhasish; Majumdar, Saurin; Natesan, Ken

2016-01-01

Highlights: • Extended finite element method used for modeling the steam generator tube rupture. • Crack propagation is modeled in an arbitrary solution dependent path. • The FE model is used for estimating the rupture pressure of steam generator tubes. • Crack coalescence modeling is also demonstrated. • The method can be used for crack modeling of tubes under severe accident condition. - Abstract: A steam generator (SG) is an important component of any pressurized water reactor. Steam generator tubes represent a primary pressure boundary whose integrity is vital to the safe operation of the reactor. SG tubes may rupture due to propagation of a crack created by mechanisms such as stress corrosion cracking, fatigue, etc. It is thus important to estimate the rupture pressures of cracked tubes for structural integrity evaluation of SGs. The objective of the present paper is to demonstrate the use of extended finite element method capability of commercially available ABAQUS software, to model SG tubes with preexisting flaws and to estimate their rupture pressures. For the purpose, elastic–plastic finite element models were developed for different SG tubes made from Alloy 600 material. The simulation results were compared with experimental results available from the steam generator tube integrity program (SGTIP) sponsored by the United States Nuclear Regulatory Commission (NRC) and conducted at Argonne National Laboratory (ANL). A reasonable correlation was found between extended finite element model results and experimental results.

An embedded crack in a constant strain triangle utilizing extended finite element concepts

DEFF Research Database (Denmark)

Olesen, J.F.; Poulsen, P.N.

2013-01-01

This paper revisits the formulation of the CST element with an embedded discrete crack taking advantage of the direct formulations developed within the framework of the extended finite element method, XFEM. The result is a simple element for modeling cohesive fracture processes in quasi-brittle m......This paper revisits the formulation of the CST element with an embedded discrete crack taking advantage of the direct formulations developed within the framework of the extended finite element method, XFEM. The result is a simple element for modeling cohesive fracture processes in quasi......-element discontinuity of displacements. The formulation is based on a variational principle of virtual work involving only the interpolation of displacements. The good performance of the element is demonstrated through the comparison with three benchmark tests in which a single crack is propagated: The center cracked...

Elemental abundance studies of CP stars. II. The silicon stars HD 133029 and HD 192913

CERN Document Server

López-García, Z

1999-01-01

For pt.1 see ibid., vol.107, no.2, p.353-63 (1994). Fine analyses of the silicon stars HD 133029 and HD 192913 are presented using ATLAS9 model atmospheres whose predictions fit the optical region spectrophotometry and H gamma profiles and have the same bulk metallicity as the deduced abundances. Both are very He poor stars. The light elements are mostly solar except for silicon, and all the heavier elements, except nickel in HD 133029 which is solar, are greatly overabundant. The iron peak elements are typically 10 times overabundant. SrYZr are of order of 100 times solar. The rare earths are 1000 or more times overabundant. Table 4 is is only available in electronic form at the CDS via anonymous ftp to cdsarc.u-strasbg.fr (130.79.128.5) or via http://cdsweb.u-strasbg.fr/Abstract.html. (50 refs).

Polymorphism in Elemental Silicon: Probabilistic Interpretation of the Realizability of Metastable Structures

Energy Technology Data Exchange (ETDEWEB)

Stevanovic, Vladan [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jones, Eric [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-11-03

With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those that have been experimentally realized as metastable at ambient conditions. We put forward an explanation for this disparity wherein the likelihood of formation of a given polymorph under near-equilibrium conditions can be estimated on the basis of mean-field isothermal-isobaric (N,p,T) ensemble statistics. The probability that a polymorph will be experimentally realized is shown to depend upon both the hypervolume of that structure's potential energy basin of attraction and a Boltzmann factor weight containing the polymorph's potential enthalpy per particle. Both attributes are calculated using density functional theory relaxations of randomly generated initial structures. We find that the metastable polymorphism displayed by silicon can be accounted for using this framework to the exclusion of a very large number of other low-energy structures.

Modeling the high-frequency complex modulus of silicone rubber using standing Lamb waves and an inverse finite element method.

Science.gov (United States)

Jonsson, Ulf; Lindahl, Olof; Andersson, Britt

2014-12-01

To gain an understanding of the high-frequency elastic properties of silicone rubber, a finite element model of a cylindrical piezoelectric element, in contact with a silicone rubber disk, was constructed. The frequency-dependent elastic modulus of the silicone rubber was modeled by a fourparameter fractional derivative viscoelastic model in the 100 to 250 kHz frequency range. The calculations were carried out in the range of the first radial resonance frequency of the sensor. At the resonance, the hyperelastic effect of the silicone rubber was modeled by a hyperelastic compensating function. The calculated response was matched to the measured response by using the transitional peaks in the impedance spectrum that originates from the switching of standing Lamb wave modes in the silicone rubber. To validate the results, the impedance responses of three 5-mm-thick silicone rubber disks, with different radial lengths, were measured. The calculated and measured transitional frequencies have been compared in detail. The comparison showed very good agreement, with average relative differences of 0.7%, 0.6%, and 0.7% for the silicone rubber samples with radial lengths of 38.0, 21.4, and 11.0 mm, respectively. The average complex elastic moduli of the samples were (0.97 + 0.009i) GPa at 100 kHz and (0.97 + 0.005i) GPa at 250 kHz.

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

KAUST Repository

Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

2016-01-01

shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

Integrated Circuit Interconnect Lines on Lossy Silicon Substrate with Finite Element Method

OpenAIRE

Sarhan M. Musa,; Matthew N. O. Sadiku

2014-01-01

The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters. In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled in...

Fabrication of Porous Silicon Based Humidity Sensing Elements on Paper

Directory of Open Access Journals (Sweden)

Tero Jalkanen

2015-01-01

Full Text Available A roll-to-roll compatible fabrication process of porous silicon (pSi based sensing elements for a real-time humidity monitoring is described. The sensing elements, consisting of printed interdigitated silver electrodes and a spray-coated pSi layer, were fabricated on a coated paper substrate by a two-step process. Capacitive and resistive responses of the sensing elements were examined under different concentrations of humidity. More than a three orders of magnitude reproducible decrease in resistance was measured when the relative humidity (RH was increased from 0% to 90%. A relatively fast recovery without the need of any refreshing methods was observed with a change in RH. Humidity background signal and hysteresis arising from the paper substrate were dependent on the thickness of sensing pSi layer. Hysteresis in most optimal sensing element setup (a thick pSi layer was still noticeable but not detrimental for the sensing. In addition to electrical characterization of sensing elements, thermal degradation and moisture adsorption properties of the paper substrate were examined in connection to the fabrication process of the silver electrodes and the moisture sensitivity of the paper. The results pave the way towards the development of low-cost humidity sensors which could be utilized, for example, in smart packaging applications or in smart cities to monitor the environment.

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Influence of rare earth elements on radiation defect formation in silicon

International Nuclear Information System (INIS)

Nazyrov, D.E.

2006-01-01

Full text: It is known that efficiency of form and kinetics annealing of radiation defects influence greatly presence of initial in controlling electrically active or inactive impurities, their concentration and position in a lattice of a semiconductor. From this point of view of impurities of group of rare earths elements (REE) are of great interest, they interact with primary radiation defects creating electrically passive complexes such as . Thus they increase radiation stability of silicon. The purpose of the given work was the investigation of effect of irradiation by γ-quanta 60 Co properties of silicon doped REE-by samarium, gadolinium and erbium. The doping of silicon was carried out by growth process. Concentration of REE - samarium, gadolinium and erbium in silicon according to neutron-activation analysis equaled 10 14 /5·10 18 cm 2 . Silicon doped by phosphorus - 15/50 Ωcm were used as control samples. The results of investigations were obtained from DLTS (deep level transient spectroscopy) measurements, Hall effect and electrical measurements on definition of a resistivity, lifetime of minority carriers of a charge and optically active of concentrations of oxygen and carbon. The optical recharge by the infrared light emitting diode (P=10 mV, λ=0,95 μm) was used for investigation of deep levels (DL) situated in lower half of band gap. In control samples irradiated by the γ-quanta 60 Co with a dose 10 16 / 5·10 18 cm -2 formation DL was found in band, the parameters of which are well-known: A-, E-centers etc. Depending on a dose of an effect of irradiate in an energy spectrum of radiation defects in Si of essential changes, except for concentration is not observed. The deep levels concentration the E c -0,17 eV and E c -0,4 eV in Si is essentially reduced with respect control samples. The comparison the dose of associations of observable levels in irradiated n-Si with similar associations in control samples shows, that a velocity of introduction

8. International conference of solid compounds of transition elements. Extended abstracts

International Nuclear Information System (INIS)

Komarek, K.; Boller, H.; Neckel, A.

1985-03-01

32 oral contributions and 126 posters on transition elements compounds and alloys are presented by Extended Abstracts; 86 thereof are of INIS relevance. Topics treated are mainly phase diagrams, crystal structure, structural chemistry and physical properties, e.g. conductivity, magnetism and superconductivity. (G.Q.)

Comparative measurement of silicon and major elements (P,S,Cl,K,Ca) in arterial walls using macro and microbeam analysis

International Nuclear Information System (INIS)

Moretto, P.

1987-01-01

There are few techniques available for the measurement of silicon at trace levels in biological materials. PIXE and prompt nuclear reaction analysis were used to locate and measure silicon and major elements in arterial walls. Macrobeam analysis, carried out by the Van de Graaff accelerator at CENBG, enabled measurement of mean tissue levels. Microbeam analysis, using the nuclear microprobe at Karlsruhe, yielded the distribution of these elements through the thickness of the arterial wall. The microanalyses were performed on arterial walls from healthy rabbits and the macrobeam study was carried out on the same samples and also on human aorta specimens [fr

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Parallel and pipelined front-end for multi-element silicon detectors in scanning electron microscopy

International Nuclear Information System (INIS)

Boulin, C.; Epstein, A.

1992-01-01

This paper discusses a silicon quadrant detector (128 elements) implemented as an electron detector in a Scanning Transmission Electron Microscope. As the electron beam scans over the sample, electrons are counted during each pixel. The authors developed an ASIC for the multichannel counting system. The digital front-end carries out the readout of all elements, in four groups, and uses these data to compute linear combinations to generate up to eight simultaneous images. For the preprocessing the authors implemented a parallel and pipelined system. Dedicated software tools were developed to generate the programs for all the processors. These tools are transparently accessed by the user via a user friendly interface

A compilation of silicon, rare earth element and twenty-one other trace element concentrations in the natural river water reference material SLRS-5 (NRC-CNRC)

International Nuclear Information System (INIS)

Yeghicheyan, Delphine; Cloquet, Christophe; Bossy, Cecile; Bouhnik Le Coz, Martine; Douchet, Chantal; Granier, Guy; Heimburger, Alexie; Losno, Remi; Lacan, Francois; Labatut, Marie; Pradoux, Catherine; Lanzanova, Aurelie; Candaudap, Frederic; Chmeleff, Jerome; Rousseau, Tristan C.C.; Seidel, Jean-Luc; Delpoux, Sophie; Tharaud, Mickael; Sivry, Yann; Sonke, Jeroen E.

2013-01-01

The natural river water certified reference material SLRS-5 (NRC-CNRC) was routinely analysed in this study for major and trace elements by ten French laboratories. Most of the measurements were made using ICP-MS. Because no certified values are assigned by NRC-CNRC for silicon and 35 trace element concentrations (rare earth elements, Ag, B, Bi, Cs, Ga, Ge, Li, Nb, P, Rb, Rh, Re, S, Sc, Sn, Th, Ti, Tl, W, Y and Zr), or for isotopic ratios, we provide a compilation of the concentrations and related uncertainties obtained by the participating laboratories. Strontium isotopic ratios are also given. (authors)

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

Silicon photomultipliers as readout elements for a Compton effect polarimeter: the COMPASS project

CERN Document Server

Del Monte, E; Brandonisio, A; Muleri, F; Soffitta, P; Costa, E; di Persio, G; Cosimo, S Di; Massaro, E; Morbidini, A; Morelli, E; Pacciani, L; Fabiani, S; Michilli, D; Giarrusso, S; Catalano, O; Impiombato, D; Mineo, T; Sottile, G; Billotta, S

2016-01-01

COMpton Polarimeter with Avalanche Silicon readout (COMPASS) is a research and development project that aims to measure the polarization of X-ray photons through Compton Scattering. The measurement is obtained by using a set of small rods of fast scintillation materials with both low-Z (as active scatterer) and high-Z (as absorber), all read-out with Silicon Photomultipliers. By this method we can operate scattering and absorbing elements in coincidence, in order to reduce the background. In the laboratory we are characterising the SiPMs using different types of scintillators and we are optimising the performances in terms of energy resolution, energy threshold and photon tagging efficiency. We aim to study the design of two types of satellite-borne instruments: a focal plane polarimeter to be coupled with multilayer optics for hard X-rays and a large area and wide field of view polarimeter for transients and Gamma Ray Bursts. In this paper we describe the status of the COMPASS project, we report about the la...

A beta ray spectrometer based on a two-, or three-element silicon detector coincidence telescope

International Nuclear Information System (INIS)

Horowitz, Y.S.; Weizman, Y.; Hirning, C.R.

1995-01-01

The operation of a beta ray energy spectrometer based on a two-or three-element silicon detector telescope is described. The front detector (A) is a thin, totally depleted, silicon surface barrier detector either 40 μm, 72 μm or 98 μm thick. The back detector (C) is a Li compensated silicon detector, 5000 μm thick. An additional thin detector can be inserted between these two detectors when additional photon rejection capability is required in intense photon fields. The capability of the spectrometer to reject photons is based on the fact that incident photons will have a small probability of simultaneously losing detectable energy in two detectors and an even smaller probability of losing detectable energy in all three detectors. Electrons, however, above a low energy threshold, will always record simultaneous, events in all three detectors. The spectrometer is capable of measuring electron energies from a lower energy coincidence threshold of 70 keV with 60% efficiency increasing to 100% efficiency in the energy region between 150 keV and 2.5 MeV. (Author)

Studies for a silicon telescope to extend the magnet facility at the DESY test beam

Energy Technology Data Exchange (ETDEWEB)

Tsionou, Dimitra [Deutsches Elektronen-Synchrotron (DESY), Notkestrasse 85, 22607 Hamburg (Germany)

2016-07-01

The International Large Detector is a detector concept for the International Linear Collider (ILC) which uses a Time Projection Chamber (TPC) as its main tracking detector. Within the framework of the LCTPC collaboration, a large prototype (LP) TPC has been built as a demonstrator. The LP has been equipped with Micro-Pattern Gas Detector modules and studied with an electron beam (1-6 GeV) in a 1 Tesla magnetic field at DESY. To extend the capabilities of the test beam setup, an external silicon tracker to be installed inside the magnet will be discussed. The silicon detector will provide high precision space points in front and behind the TPC inside the magnet. It will provide reference tracks that will allow to determine the momentum of the tracks passing the TPC, and which will help in correcting for field distortion effects in the LPTPC volume. In order to meet these requirements, simulation studies have been performed to determine the layout of the system and have placed stringent requirements on the sensor spatial resolution of better than 10 μ m. These studies will be presented along with the hardware options under evaluation.

Extended finite element method and its application in heterogeneous materials with inclusions

International Nuclear Information System (INIS)

Du Chengbin; Jiang Shouyan; Ying Zongquan

2010-01-01

To simplify the technology of finite element mesh generation for particle reinforced material, enrichment techniques is used to account for the material interfaces in the framework of extended finite element method (XFEM). The geometry of material distribution is described by level set function, which allows one to model the internal boundaries of the microstructure without the adaptation of the mesh. The enrichment function is used to improve the shape function of classical finite element method (FEM) for the nodes supporting the elements cut by the interface. The key issue of XFEM including constructing displacement pattern, establishment of the governing equation and scheme of numerical integration is also presented. It is not necessarily matching the internal features of the inclusions using XFEM, so the generation of finite element mesh can be performed easily. Finally, a plate with multi-circular inclusions under uniaxial tension is simulated by XFEM and FEM, respectively. The results show that XFEM is highly effective and efficient.

Silicon nanowire structures as high-sensitive pH-sensors

International Nuclear Information System (INIS)

Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

2012-01-01

Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

A Finite Element Theory for Predicting the Attenuation of Extended-Reacting Liners

Science.gov (United States)

Watson, W. R.; Jones, M. G.

2009-01-01

A non-modal finite element theory for predicting the attenuation of an extended-reacting liner containing a porous facesheet and located in a no-flow duct is presented. The mathematical approach is to solve separate wave equations in the liner and duct airway and to couple these two solutions by invoking kinematic constraints at the facesheet that are consistent with a continuum theory of fluid motion. Given the liner intrinsic properties, a weak Galerkin finite element formulation with cubic polynomial basis functions is used as the basis for generating a discrete system of acoustic equations that are solved to obtain the coupled acoustic field. A state-of-the-art, asymmetric, parallel, sparse equation solver is implemented that allows tens of thousands of grid points to be analyzed. A grid refinement study is presented to show that the predicted attenuation converges. Excellent comparison of the numerically predicted attenuation to that of a mode theory (using a Haynes 25 metal foam liner) is used to validate the computational approach. Simulations are also presented for fifteen porous plate, extended-reacting liners. The construction of some of the porous plate liners suggest that they should behave as resonant liners while the construction of others suggest that they should behave as broadband attenuators. In each case the finite element theory is observed to predict the proper attenuation trend.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-01-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

International Nuclear Information System (INIS)

Bloomfield, P.

1992-01-01

The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

Extending Penning trap mass measurements with SHIPTRAP to the heaviest elements

International Nuclear Information System (INIS)

Block, M.; Ackermann, D.; Herfurth, F.; Hofmann, S.; Blaum, K.; Droese, C.; Marx, G.; Schweikhard, L.; Düllmann, Ch. E.; Eibach, M.; Eliseev, S.; Haettner, E.; Plaß, W. R.; Scheidenberger, C.; Heßberger, F. P.; Ramirez, E. Minaya; Nesterenko, D.

2013-01-01

Penning-trap mass spectrometry of radionuclides provides accurate mass values and absolute binding energies. Such mass measurements are sensitive indicators of the nuclear structure evolution far away from stability. Recently, direct mass measurements have been extended to the heavy elements nobelium (Z=102) and lawrencium (Z=103) with the Penning-trap mass spectrometer SHIPTRAP. The results probe nuclear shell effects at N=152. New developments will pave the way to access even heavier nuclides.

Adhesion of Pseudomonas aeruginosa and Staphylococcus epidermidis to silicone-hydrogel contact lenses.

Science.gov (United States)

Henriques, Mariana; Sousa, Cláudia; Lira, Madalena; Elisabete, M; Oliveira, Real; Oliveira, Rosário; Azeredo, Joana

2005-06-01

The purpose of this study is to compare the adhesion capabilities of the most important etiologic agents of microbial ocular infection to the recently available silicone-hydrogel lenses with those to a conventional hydrogel lens. In vitro static adhesion assays of Pseudomonas aeruginosa 10,145, Staphylococcus epidermidis 9142 (biofilm-positive), and 12,228 (biofilm-negative) to two extended-wear silicone-hydrogel lenses (balafilcon A and lotrafilcon A), a daily wear silicone-hydrogel lens (galyfilcon A) and a conventional hydrogel (etafilcon A) were performed. To interpret the adhesion results, lens surface relative hydrophobicity was assessed by water contact angle measurements. P. aeruginosa and S. epidermidis 9142 exhibited greater adhesion capabilities to the extended wear silicone-hydrogel lenses than to the daily wear silicone- and conventional hydrogel lenses (p adhesion extent of these strains to galyfilcon A and etafilcon A. The biofilm negative strain of S. epidermidis adhered in larger extents to the silicone-hydrogel lenses than to the conventional hydrogel (p contact angle measurements revealed that the extended wear silicone-hydrogel lenses are hydrophobic, whereas the daily wear silicone- and conventional hydrogel lenses are hydrophilic. As a result of their hydrophobicity, the extended wear silicone-hydrogel lenses (lotrafilcon A and balafilcon A) may carry higher risk of microbial contamination than both the hydrophilic daily wear silicone-hydrogel lens, galyfilcon A and the conventional hydrogel lens, etafilcon A.

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Highly efficient luminescent solar concentrators based on earth-abundant indirect-bandgap silicon quantum dots

Science.gov (United States)

Meinardi, Francesco; Ehrenberg, Samantha; Dhamo, Lorena; Carulli, Francesco; Mauri, Michele; Bruni, Francesco; Simonutti, Roberto; Kortshagen, Uwe; Brovelli, Sergio

2017-02-01

Building-integrated photovoltaics is gaining consensus as a renewable energy technology for producing electricity at the point of use. Luminescent solar concentrators (LSCs) could extend architectural integration to the urban environment by realizing electrode-less photovoltaic windows. Crucial for large-area LSCs is the suppression of reabsorption losses, which requires emitters with negligible overlap between their absorption and emission spectra. Here, we demonstrate the use of indirect-bandgap semiconductor nanostructures such as highly emissive silicon quantum dots. Silicon is non-toxic, low-cost and ultra-earth-abundant, which avoids the limitations to the industrial scaling of quantum dots composed of low-abundance elements. Suppressed reabsorption and scattering losses lead to nearly ideal LSCs with an optical efficiency of η = 2.85%, matching state-of-the-art semi-transparent LSCs. Monte Carlo simulations indicate that optimized silicon quantum dot LSCs have a clear path to η > 5% for 1 m2 devices. We are finally able to realize flexible LSCs with performances comparable to those of flat concentrators, which opens the way to a new design freedom for building-integrated photovoltaics elements.

Electromagnetic Extended Finite Elements for High-Fidelity Multimaterial Problems LDRD Final Report

Energy Technology Data Exchange (ETDEWEB)

Siefert, Christopher [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Bochev, Pavel Blagoveston [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Kramer, Richard Michael Jack [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Voth, Thomas Eugene [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Cox, James [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-09-01

Surface effects are critical to the accurate simulation of electromagnetics (EM) as current tends to concentrate near material surfaces. Sandia EM applications, which include exploding bridge wires for detonator design, electromagnetic launch of flyer plates for material testing and gun design, lightning blast-through for weapon safety, electromagnetic armor, and magnetic flux compression generators, all require accurate resolution of surface effects. These applications operate in a large deformation regime, where body-fitted meshes are impractical and multimaterial elements are the only feasible option. State-of-the-art methods use various mixture models to approximate the multi-physics of these elements. The empirical nature of these models can significantly compromise the accuracy of the simulation in this very important surface region. We propose to substantially improve the predictive capability of electromagnetic simulations by removing the need for empirical mixture models at material surfaces. We do this by developing an eXtended Finite Element Method (XFEM) and an associated Conformal Decomposition Finite Element Method (CDFEM) which satisfy the physically required compatibility conditions at material interfaces. We demonstrate the effectiveness of these methods for diffusion and diffusion-like problems on node, edge and face elements in 2D and 3D. We also present preliminary work on h -hierarchical elements and remap algorithms.

Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-08-01

The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

Modeling of extended defects in silicon

International Nuclear Information System (INIS)

Law, M.E.; Jones, K.S.; Earles, S.K.; Lilak, A.D.; Xu, J.W.

1997-01-01

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed

Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

KAUST Repository

Hussain, Aftab M.

2012-12-01

There has been an exponential increase in the performance of silicon based semiconductor devices in the past few decades. This improvement has mainly been due to dimensional scaling of the MOSFET. However, physical constraints limit the continued growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel material for CMOS applications. For the first time ever, MOS devices using SiSn as channel material have been demonstrated. A low cost, scalable and manufacturable process for obtaining SiSn by diffusion of Sn into silicon has also been explored. The channel material thus obtained is electrically characterized by fabricating MOSCAPs and Mesa-shaped MOSFETs. The SiSn devices have been compared to similar devices fabricated using silicon as channel material.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

Science.gov (United States)

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Finite element simulations of low-mass readout cables for the CBM Silicon Tracking System using RAPHAEL

Energy Technology Data Exchange (ETDEWEB)

Singla, M., E-mail: M.Singla@gsi.de [Goethe University, Frankfurt (Germany); GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany); Chatterji, S.; Müller, W.F.J.; Kleipa, V.; Heuser, J.M. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany)

2014-01-21

The first three-dimensional simulation study of thin multi-line readout cables using finite element simulation tool RAPHAEL is being reported. The application is the Silicon Tracking System (STS) of the fixed-target heavy-ion experiment Compressed Baryonic Matter (CBM), under design at the forthcoming accelerator center FAIR in Germany. RAPHAEL has been used to design low-mass analog readout cables with minimum possible Equivalent Noise Charge (ENC). Various trace geometries and trace materials have been explored in detail for this optimization study. These cables will bridge the distance between the microstrip detectors and the signal processing electronics placed at the periphery of the silicon tracking stations. SPICE modeling has been implemented in Sentaurus Device to study the transmission loss (dB loss) in cables and simulation has been validated with measurements. An optimized design having minimum possible ENC, material budget and transmission loss for the readout cables has been proposed.

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Determination of heavy metals contamination using a silicon sensor with extended responsive to the UV

International Nuclear Information System (INIS)

Aceves-Mijares, M; Ramírez, J M; Pedraza, J; Román-López, S; Chávez, C

2013-01-01

Due to its potential risk to human health and ecology, the presence of heavy metals in water demands of techniques to determine them in a simple and economical way. Currently, new developments of light emitters and detectors open a window of opportunities to use optical properties to analyze contaminated water. In this paper, a silicon sensor developed to extend its sensitivity up to the UV range is used to determine heavy metals in water. Cadmium, Zinc, Lead, Copper and Manganese mixed in pure water at different concentrations were used as test samples. The photocurrent obtained by the light that passes through the samples was used to determine the optical transmittance of pure and contaminated water. Preliminary results show a good separability between samples, which can be used for qualitative and quantitative detection of such heavy metals in water.

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

Science.gov (United States)

Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

2016-06-07

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

International Nuclear Information System (INIS)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-01-01

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

Science.gov (United States)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

Status report on performance of radioisotope thermoelectric generators using silicon germanium thermoelectric elements

International Nuclear Information System (INIS)

Bennett, G.L.; Campbell, R.W.; Putnam, L.R.; Hemler, R.J.

1994-01-01

Three general-purpose heat source radioisotope thermoelectric generators (GPHS-RTGs) are currently in use in space: two on board the Galileo spacecraft on its way to Jupiter and one on the Ulysses spacecraft exploring the polar regions of the Sun. The GPHS-RTG was designed to provide at least 285 W(e) at the beginning of mission (BOM) within a mass constraint of 56 kg and an overall size envelope of 42.2 cm in diameter and 114 cm in length. The Galileo spacecraft, which as already sent back exciting scientific information on Venus, Earth, and the asteroids Gaspra and Ida, carries two GPHS-RTGs which operate at 30 V. The Ulysses spacecraft, which has already successfully swung past Jupiter on its way to the southern polar regions of the Sun, carries one GPHS-RTG which operates at 28 V. The analyses presented in the paper show that both Galileo and Ulysses will have sufficient power for the baseline missions and analyses are under way to determine the power available for an extended Ulysses mission out to the year 2002. Ten other silicon-germanium-based RTGs on the LES 8/9 and Voyager 1/2 spacecraft have completed their prime missions and are now successfully performing extended missions

High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

Directory of Open Access Journals (Sweden)

Naif H. Al-Hardan

2016-06-01

Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

A tracer aided study on silicon chemistry in biological systems

NARCIS (Netherlands)

Brasser, H.J.

2009-01-01

Silicon (Si) is omnipresent in nature, and it is involved in important but diverse roles in a broad range of organisms, including diatoms, higher plants and humans. Some organisms, like the diatoms, need high amounts of silicon, and master silicon chemistry to a high extend using several enzymes.

Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Idrobo, Juan C., E-mail: idrobojc@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Walkosz, Weronika [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Klie, Robert F.; Oeguet, Serdar [Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States)

2012-12-15

In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si{sub 3}N{sub 4}/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si{sub 3}N{sub 4}/SiO{sub 2} interface and in bulk Si{sub 3}N{sub 4} using aberration-corrected scanning transmission electron microscopy. -- Highlights: Black-Right-Pointing-Pointer Revealing the atomic structure of the {alpha}-Si{sub 3}N{sub 4}/SiO{sub 2} interface. Black-Right-Pointing-Pointer Identification and lattice location of oxygen impurities in bulk {alpha}-Si{sub 3}N{sub 4}. Black-Right-Pointing-Pointer Short range ordering of nitrogen and oxygen at the {beta}-Si{sub 3}N{sub 4}/SiO{sub 2} interface.

Fracture Capabilities in Grizzly with the extended Finite Element Method (X-FEM)

Energy Technology Data Exchange (ETDEWEB)

Dolbow, John [Idaho National Lab. (INL), Idaho Falls, ID (United States); Zhang, Ziyu [Idaho National Lab. (INL), Idaho Falls, ID (United States); Spencer, Benjamin [Idaho National Lab. (INL), Idaho Falls, ID (United States); Jiang, Wen [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2015-09-01

Efforts are underway to develop fracture mechanics capabilities in the Grizzly code to enable it to be used to perform deterministic fracture assessments of degraded reactor pressure vessels (RPVs). A capability was previously developed to calculate three-dimensional interaction- integrals to extract mixed-mode stress-intensity factors. This capability requires the use of a finite element mesh that conforms to the crack geometry. The eXtended Finite Element Method (X-FEM) provides a means to represent a crack geometry without explicitly fitting the finite element mesh to it. This is effected by enhancing the element kinematics to represent jump discontinuities at arbitrary locations inside of the element, as well as the incorporation of asymptotic near-tip fields to better capture crack singularities. In this work, use of only the discontinuous enrichment functions was examined to see how accurate stress intensity factors could still be calculated. This report documents the following work to enhance Grizzly’s engineering fracture capabilities by introducing arbitrary jump discontinuities for prescribed crack geometries; X-FEM Mesh Cutting in 3D: to enhance the kinematics of elements that are intersected by arbitrary crack geometries, a mesh cutting algorithm was implemented in Grizzly. The algorithm introduces new virtual nodes and creates partial elements, and then creates a new mesh connectivity; Interaction Integral Modifications: the existing code for evaluating the interaction integral in Grizzly was based on the assumption of a mesh that was fitted to the crack geometry. Modifications were made to allow for the possibility of a crack front that passes arbitrarily through the mesh; and Benchmarking for 3D Fracture: the new capabilities were benchmarked against mixed-mode three-dimensional fracture problems with known analytical solutions.

Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Imura, T; Hiraki, A; Okamoto, H

1982-01-01

Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

Science.gov (United States)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Tin - an unlikely ally for silicon field effect transistors?

KAUST Repository

Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

2014-01-01

We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows

Finite element modelling and experimental characterization of an electro-thermally actuated silicon-polymer micro gripper

International Nuclear Information System (INIS)

Krecinic, F; Duc, T Chu; Sarro, P M; Lau, G K

2008-01-01

This paper presents simulation and experimental characterization of an electro-thermally actuated micro gripper. This micro actuator can conceptually be seen as a bi-morph structure of SU-8 and silicon, actuated by thermal expansion of the polymer. The polymer micro gripper with an embedded comb-like silicon skeleton is designed to reduce unwanted out-of-plane bending of the actuator, while offering a large gripper stroke. The temperature and displacement field of the micro gripper structure is determined using a two-dimensional finite element analysis. This analysis is compared to experimental data from steady-state and transient measurements of the integrated heater resistance, which depends on the average temperature of the actuator. The stability of the polymer actuator is evaluated by recording the transient behaviour of the actual jaw displacements. The maximum single jaw displacement of this micro gripper design is 34 µm at a driving voltage of 4 V and an average actuator temperature of 170 °C. The transient thermal response is modelled by a first-order system with a characteristic time constant of 11.1 ms. The simulated force capability of the device is 0.57 mN per µm jaw displacement

Update on the possible nutritional importance of silicon.

Science.gov (United States)

Nielsen, Forrest H

2014-10-01

Convincing evidence that silicon is a bioactive beneficial trace element continues to accumulate. The evidence, which has come from human, animal, and in vitro studies performed by several laboratories, indicate that silicon in nutritional and supra nutritional amounts promotes bone and connective tissue health, may have a modulating effect on the immune or inflammatory response, and has been associated with mental health. A plausible mechanism of action for the beneficial effects of silicon is the binding of hydroxyl groups of polyols such that it influences the formation and/or utilization of glycosaminoglycans, mucopolysaccharides, and collagen in connective tissue and bone. In addition, silicon may affect the absorption, retention or action of other mineral elements (e.g., aluminum, copper, magnesium). Based on findings from both animal and human experiments, an intake of silicon of near 25mg/d would be a reasonable suggestion for an adequate intake that would assure its nutritional benefits. Increased intakes of silicon through consuming unrefined grains, certain vegetables, and beverages and cereals made from grains should be recognized as a reasonable dietary recommendation. Published by Elsevier GmbH.

Silicon spintronics with ferromagnetic tunnel devices

International Nuclear Information System (INIS)

Jansen, R; Sharma, S; Dash, S P; Min, B C

2012-01-01

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Pellet Cladding Mechanical Interaction Modeling Using the Extended Finite Element Method

Energy Technology Data Exchange (ETDEWEB)

Spencer, Benjamin W.; Jiang, Wen; Dolbow, John E.; Peco, Christian

2016-09-01

As a brittle material, the ceramic UO2 used as light water reactor fuel experiences significant fracturing throughout its life, beginning with the first rise to power of fresh fuel. This has multiple effects on the thermal and mechanical response of the fuel/cladding system. One such effect that is particularly important is that when there is mechanical contact between the fuel and cladding, cracks that extending from the outer surface of the fuel into the volume of the fuel cause elevated stresses in the adjacent cladding, which can potentially lead to cladding failure. Modeling the thermal and mechanical response of the cladding in the vicinity of these surface-breaking cracks in the fuel can provide important insights into this behavior to help avoid operating conditions that could lead to cladding failure. Such modeling has traditionally been done in the context of finite-element-based fuel performance analysis by modifying the fuel mesh to introduce discrete cracks. While this approach is effective in capturing the important behavior at the fuel/cladding interface, there are multiple drawbacks to explicitly incorporating the cracks in the finite element mesh. Because the cracks are incorporated in the original mesh, the mesh must be modified for cracks of specified location and depth, so it is difficult to account for crack propagation and the formation of new cracks at other locations. The extended finite element method (XFEM) has emerged in recent years as a powerful method to represent arbitrary, evolving, discrete discontinuities within the context of the finite element method. Development work is underway by the authors to implement XFEM in the BISON fuel performance code, and this capability has previously been demonstrated in simulations of fracture propagation in ceramic nuclear fuel. These preliminary demonstrations have included only the fuel, and excluded the cladding for simplicity. This paper presents initial results of efforts to apply XFEM to

Nuclear reactor fuel element

International Nuclear Information System (INIS)

D'Eye, R.W.M.; Shennan, J.V.; Ford, L.H.

1977-01-01

Fuel element with particles from ceramic fissionable material (e.g. uranium carbide), each one being coated with pyrolitically deposited carbon and all of them being connected at their points of contact by means of an individual crossbar. The crossbar consists of silicon carbide produced by reaction of silicon metal powder with the carbon under the influence of heat. Previously the silicon metal powder together with the particles was kneaded in a solvent and a binder (e.g. epoxy resin in methyl ethyl ketone plus setting agent) to from a pulp. The reaction temperature lies at 1750 0 C. The reaction itself may take place in a nitrogen atmosphere. There will be produced a fuel element with a high overall thermal conductivity. (DG) [de

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Silicon Nanowires for All-Optical Signal Processing in Optical Communication

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Ji, Hua

2012-01-01

Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

Study on interaction between induced and natural fractures by extended finite element method

Science.gov (United States)

Xu, DanDan; Liu, ZhanLi; Zhuang, Zhuo; Zeng, QingLei; Wang, Tao

2017-02-01

Fracking is one of the kernel technologies in the remarkable shale gas revolution. The extended finite element method is used in this paper to numerically investigate the interaction between hydraulic and natural fractures, which is an important issue of the enigmatic fracture network formation in fracking. The criteria which control the opening of natural fracture and crossing of hydraulic fracture are tentatively presented. Influence factors on the interaction process are systematically analyzed, which include the approach angle, anisotropy of in-situ stress and fluid pressure profile.

Governance of extended lifecycle in large-scale eHealth initiatives: analyzing variability of enterprise architecture elements.

Science.gov (United States)

Mykkänen, Juha; Virkanen, Hannu; Tuomainen, Mika

2013-01-01

The governance of large eHealth initiatives requires traceability of many requirements and design decisions. We provide a model which we use to conceptually analyze variability of several enterprise architecture (EA) elements throughout the extended lifecycle of development goals using interrelated projects related to the national ePrescription in Finland.

The Numerical Simulation of the Crack Elastoplastic Extension Based on the Extended Finite Element Method

Directory of Open Access Journals (Sweden)

Xia Xiaozhou

2013-01-01

Full Text Available In the frame of the extended finite element method, the exponent disconnected function is introduced to reflect the discontinuous characteristic of crack and the crack tip enrichment function which is made of triangular basis function, and the linear polar radius function is adopted to describe the displacement field distribution of elastoplastic crack tip. Where, the linear polar radius function form is chosen to decrease the singularity characteristic induced by the plastic yield zone of crack tip, and the triangle basis function form is adopted to describe the displacement distribution character with the polar angle of crack tip. Based on the displacement model containing the above enrichment displacement function, the increment iterative form of elastoplastic extended finite element method is deduced by virtual work principle. For nonuniform hardening material such as concrete, in order to avoid the nonsymmetry characteristic of stiffness matrix induced by the non-associate flowing of plastic strain, the plastic flowing rule containing cross item based on the least energy dissipation principle is adopted. Finally, some numerical examples show that the elastoplastic X-FEM constructed in this paper is of validity.

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.

1995-08-01

This workshop dealt with engineering aspects and material properties of silicon electronic devices. Crystalline silicon growth, modeling, and properties are discussed in general and as applied to solar cells. Topics considered in discussions of silicon growth include: casting, string ribbons, Al backside contacts, ion implantation, gettering, passivation, and ultrasound treatments. Properties studies include: Electronic properties of defects and impurities, dopant and carrier concentrations, structure and bonding, nitrogen effects, degradation of bulk diffusion length, and recombination parameters. Individual papers from the workshop are indexed separately on the Energy Data Bases.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Trace elements in renal disease and hemodialysis

International Nuclear Information System (INIS)

Miura, Yoshinori; Nakai, Keiko; Suwabe, Akira; Sera, Koichiro

2002-01-01

A number of considerations suggest that trace element disturbances might occur in patients with renal disease and in hemodialysis (HD) patients. Using particle induced X-ray emission, we demonstrated the relations between serum concentration, urinary excretion of the trace elements and creatinine clearance (Ccr) in randomized 50 patients. To estimate the effects of HD, we also observed the changes of these elements in serum and dialysis fluids during HD. Urinary silicon excretion decreased, and serum silicon concentration increased as Ccr decreased, with significant correlation (r=0.702, p<0.001 and r=0.676, p<0.0001, respectively). We also observed the increase of serum silicon, and the decrease of silicon in dialysis fluids during HD. These results suggested that reduced renal function and also dialysis contributed to silicon accumulation. Although serum selenium decreased significantly according to Ccr decrease (r=0.452, p<0.01), we could detect no change in urinary selenium excretion and no transfer during HD. Serum bromine and urinary excretion of bromine did not correlate to Ccr. However we observed a bromine transfer from the serum to the dialysis fluid that contributed to the serum bromine decrease in HD patients

Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

KAUST Repository

Hussain, Aftab M.

2016-01-01

, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We report a process for fabricating through

Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

KAUST Repository

Hussain, Aftab M.

2016-12-01

With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Influence of silicon on void nucleation in irradiated alloys

International Nuclear Information System (INIS)

Esmailzadeh, B.; Kumar, A.; Garner, F.A.

1984-01-01

The addition of silicon to pure nickel, Ni-Cr alloys and Fe-Ni-Cr alloys raises the diffusivity of each of the alloy components. The resultant increase in the effective vacancy diffusion coefficient causes large reductions in the nucleation rate of voids during irradiation. This extends the transient regime of swelling, which is controlled not only by the amount of silicon in solution but also by the precipitation kinetics of precipitates rich in nickel and silicon

A new large solid angle multi-element silicon drift detector system for low energy X-ray fluorescence spectroscopy

Science.gov (United States)

Bufon, J.; Schillani, S.; Altissimo, M.; Bellutti, P.; Bertuccio, G.; Billè, F.; Borghes, R.; Borghi, G.; Cautero, G.; Cirrincione, D.; Fabiani, S.; Ficorella, F.; Gandola, M.; Gianoncelli, A.; Giuressi, D.; Kourousias, G.; Mele, F.; Menk, R. H.; Picciotto, A.; Rachevski, A.; Rashevskaya, I.; Sammartini, M.; Stolfa, A.; Zampa, G.; Zampa, N.; Zorzi, N.; Vacchi, A.

2018-03-01

Low-energy X-ray fluorescence (LEXRF) is an essential tool for bio-related research of organic samples, whose composition is dominated by light elements. Working at energies below 2 keV and being able to detect fluorescence photons of lightweight elements such as carbon (277 eV) is still a challenge, since it requires in-vacuum operations to avoid in-air photon absorption. Moreover, the detectors must have a thin entrance window and collect photons at an angle of incidence near 90 degrees to minimize the absorption by the protective coating. Considering the low fluorescence yield of light elements, it is important to cover a substantial part of the solid angle detecting ideally all emitted X-ray fluorescence (XRF) photons. Furthermore, the energy resolution of the detection system should be close to the Fano limit in order to discriminate elements whose XRF emission lines are often very close within the energy spectra. To ensure all these features, a system consisting of four monolithic multi-element silicon drift detectors was developed. The use of four separate detector units allows optimizing the incidence angle on all the sensor elements. The multi-element approach in turn provides a lower leakage current on each anode, which, in combination with ultra-low noise preamplifiers, is necessary to achieve an energy resolution close to the Fano limit. The potential of the new detection system and its applicability for typical LEXRF applications has been proved on the Elettra TwinMic beamline.

Silicon: the evolution of its use in biomaterials.

Science.gov (United States)

Henstock, J R; Canham, L T; Anderson, S I

2015-01-01

In the 1970s, several studies revealed the requirement for silicon in bone development, while bioactive silicate glasses simultaneously pioneered the current era of bioactive materials. Considerable research has subsequently focused on the chemistry and biological function of silicon in bone, demonstrating that the element has at least two separate effects in the extracellular matrix: (i) interacting with glycosaminoglycans and proteoglycans during their synthesis, and (ii) forming ionic substitutions in the crystal lattice structure of hydroxyapatite. In addition, the dissolution products of bioactive glass (predominantly silicic acids) have significant effects on the molecular biology of osteoblasts in vitro, regulating the expression of several genes including key osteoblastic markers, cell cycle regulators and extracellular matrix proteins. Researchers have sought to capitalize on these effects and have generated a diverse array of biomaterials, which include bioactive glasses, silicon-substituted hydroxyapatites and pure, porosified silicon, but all these materials share similarities in the mechanisms that result in their bioactivity. This review discusses the current data obtained from original research in biochemistry and biomaterials science supporting the role of silicon in bone, comparing both the biological function of the element and analysing the evolution of silicon-containing biomaterials. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Microelectromechanical pump utilizing porous silicon

Science.gov (United States)

Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

2011-07-19

A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

A simple chemical method for the separation of phosphorus interfering the trace element determinations by neutron activation analysis in high doped silicon wafers

International Nuclear Information System (INIS)

Wagler, H.; Flachowsky, J.

1986-01-01

Neutron activation analysis is one of the most available method for the determination of trace elements, but in the case of P-doped silicon wafers the 32 P-activity interferes the gamma spectrometry. It is not possible to determine the trace elements without chemical manipulations. On the other hand, time consuming chemical separations should be avoided. Therefore, a simple and rapid P-separation method has to be developed, in which the following twelve trace elements should be taken into consideration: Ag, As, Au, Co, Cr, Cu, Fe, Mo, Na, Sb, W, and Zn. After acid oxidative dissolution of the activated sample, P is present as phosphate ion. The phosphate ion is removed by precipitation as BiPO 4 . (author)

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

A Mechanochemical Approach to Porous Silicon Nanoparticles Fabrication

Directory of Open Access Journals (Sweden)

Luca De Stefano

2011-06-01

Full Text Available Porous silicon samples have been reduced in nanometric particles by a well known industrial mechanical process, the ball grinding in a planetary mill; the process has been extended to crystalline silicon for comparison purposes. The silicon nanoparticles have been studied by X-ray diffraction, infrared spectroscopy, gas porosimetry and transmission electron microscopy. We have estimated crystallites size from about 50 nm for silicon to 12 nm for porous silicon. The specific surface area of the powders analyzed ranges between 100 m2/g to 29 m2/g depending on the milling time, ranging from 1 to 20 h. Electron microscopy confirms the nanometric size of the particles and reveals a porous structure in the powders obtained by porous silicon samples which has been preserved by the fabrication conditions. Chemical functionalization during the milling process by a siloxane compound has also been demonstrated.

Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

International Nuclear Information System (INIS)

Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

2009-01-01

We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

Tin (Sn) for enhancing performance in silicon CMOS

KAUST Repository

Hussain, Aftab M.; Fahad, Hossain M.; Singh, Nirpendra; Sevilla, Galo T.; Schwingenschlö gl, Udo; Hussain, Muhammad Mustafa

2013-01-01

We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

Tin (Sn) for enhancing performance in silicon CMOS

KAUST Repository

Hussain, Aftab M.

2013-10-01

We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

Biorefining of wheat straw: accounting for the distribution of mineral elements in pretreated biomass by an extended pretreatment – severity equation

DEFF Research Database (Denmark)

Le, Duy Michael; Sørensen, Hanne Risbjerg; Knudsen, Niels Ole

2014-01-01

Background: Mineral elements present in lignocellulosic biomass feedstocks may accumulate in biorefinery process streams and cause technological problems, or alternatively can be reaped for value addition. A better understanding of the distribution of minerals in biomass in response to pretreatment...... factors is therefore important in relation to development of new biorefinery processes. The objective of the present study was to examine the levels of mineral elements in pretreated wheat straw in response to systematic variations in the hydrothermal pretreatment parameters (pH, temperature......) Silicon, iron, copper, aluminum correlated with lignin and cellulose levels, but the levels of these constituents showed no severity-dependent trends. For the first group, an expanded pretreatment-severity equation, containing a specific factor for each constituent, accounting for variability due...

Effect of neutron irradiation on p-type silicon

International Nuclear Information System (INIS)

Sopko, B.

1973-01-01

The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

Nuclear fuel element

International Nuclear Information System (INIS)

Hirayama, Satoshi; Kawada, Toshiyuki; Matsuzaki, Masayoshi.

1980-01-01

Purpose: To provide a fuel element for reducing the mechanical interactions between a fuel-cladding tube and the fuel element and for alleviating the limits of the operating conditions of a reactor. Constitution: A fuel element having mainly uranium dioxide consists of a cylindrical outer pellet and cylindrical inner pellet inserted into the outer pellet. The outer pellet contains two or more additives selected from aluminium oxide, beryllium oxide, magnesium oxide, silicon oxide, sodium oxide, phosphorus oxide, calcium oxide and iron oxide, and the inner pellet contains nuclear fuel substance solely or one additive selected from calcium oxide, silicon oxide, aluminium oxide, magnesium oxide, zirconium oxide and iron oxide. The outer pellet of the fuel thus constituted is reduced in mechanical strength and also in the mechanical interactions with the cladding tube, and the plastic fluidity of the entire pellet is prevented by the inner pellet increased in the mechanical strength. (Kamimura, M.)

Hydro-mechanical coupled simulation of hydraulic fracturing using the eXtended Finite Element Method (XFEM)

Science.gov (United States)

Youn, Dong Joon

This thesis presents the development and validation of an advanced hydro-mechanical coupled finite element program analyzing hydraulic fracture propagation within unconventional hydrocarbon formations under various conditions. The realistic modeling of hydraulic fracturing is necessarily required to improve the understanding and efficiency of the stimulation technique. Such modeling remains highly challenging, however, due to factors including the complexity of fracture propagation mechanisms, the coupled behavior of fracture displacement and fluid pressure, the interactions between pre-existing natural and initiated hydraulic fractures and the formation heterogeneity of the target reservoir. In this research, an eXtended Finite Element Method (XFEM) scheme is developed allowing for representation of single or multiple fracture propagations without any need for re-meshing. Also, the coupled flows through the fracture are considered in the program to account for their influence on stresses and deformations along the hydraulic fracture. In this research, a sequential coupling scheme is applied to estimate fracture aperture and fluid pressure with the XFEM. Later, the coupled XFEM program is used to estimate wellbore bottomhole pressure during fracture propagation, and the pressure variations are analyzed to determine the geometry and performance of the hydraulic fracturing as pressure leak-off test. Finally, material heterogeneity is included into the XFEM program to check the effect of random formation property distributions to the hydraulic fracture geometry. Random field theory is used to create the random realization of the material heterogeneity with the consideration of mean, standard deviation, and property correlation length. These analyses lead to probabilistic information on the response of unconventional reservoirs and offer a more scientific approach regarding risk management for the unconventional reservoir stimulation. The new stochastic approach

Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Science.gov (United States)

Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

2017-12-01

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Tin (Sn) - An Unlikely Ally to Extend Moore's Law for Silicon CMOS?

KAUST Repository

Hussain, Aftab M.

2012-01-01

growth in device performance. To overcome this problem, novel channel materials are being developed to enhance carrier mobility and hence increase device performance. This work explores a novel semiconducting alloy - Silicon-tin (SiSn) as a channel

Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

Science.gov (United States)

Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

2017-07-07

Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

DEFF Research Database (Denmark)

Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

2010-01-01

A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

Extended Finite Element Method with Simplified Spherical Harmonics Approximation for the Forward Model of Optical Molecular Imaging

Directory of Open Access Journals (Sweden)

Wei Li

2012-01-01

Full Text Available An extended finite element method (XFEM for the forward model of 3D optical molecular imaging is developed with simplified spherical harmonics approximation (SPN. In XFEM scheme of SPN equations, the signed distance function is employed to accurately represent the internal tissue boundary, and then it is used to construct the enriched basis function of the finite element scheme. Therefore, the finite element calculation can be carried out without the time-consuming internal boundary mesh generation. Moreover, the required overly fine mesh conforming to the complex tissue boundary which leads to excess time cost can be avoided. XFEM conveniences its application to tissues with complex internal structure and improves the computational efficiency. Phantom and digital mouse experiments were carried out to validate the efficiency of the proposed method. Compared with standard finite element method and classical Monte Carlo (MC method, the validation results show the merits and potential of the XFEM for optical imaging.

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Finite element analysis of an extended end-plate connection using the T-stub approach

Energy Technology Data Exchange (ETDEWEB)

Muresan, Ioana Cristina; Balc, Roxana [Technical University of Cluj-Napoca, Faculty of Civil Engineering. 15 C Daicoviciu Str., 400020, Cluj-Napoca (Romania)

2015-03-10

Beam-to-column end-plate bolted connections are usually used as moment-resistant connections in steel framed structures. For this joint type, the deformability is governed by the deformation capacity of the column flange and end-plate under tension and elongation of the bolts. All these elements around the beam tension flange form the tension region of the joint, which can be modeled by means of equivalent T-stubs. In this paper a beam-to-column end-plate bolted connection is substituted with a T-stub of appropriate effective length and it is analyzed using the commercially available finite element software ABAQUS. The performance of the model is validated by comparing the behavior of the T-stub from the numerical simulation with the behavior of the connection as a whole. The moment-rotation curve of the T-stub obtained from the numerical simulation is compared with the behavior of the whole extended end-plate connection, obtained by numerical simulation, experimental tests and analytical approach.

The reactive element effect of yttrium and yttrium silicon on high temperature oxidation of NiCrAl coating

Science.gov (United States)

Ramandhany, S.; Sugiarti, E.; Desiati, R. D.; Martides, E.; Junianto, E.; Prawara, B.; Sukarto, A.; Tjahjono, A.

2018-03-01

The microstructure formed on the bond coat affects the oxidation resistance, particularly the formation of a protective oxide layer. The adhesion of bond coat and TGO increased significantly by addition of reactive element. In the present work, the effect of yttrium and yttrium silicon as reactive element (RE) on NiCrAl coating was investigated. The NiCrAl (without RE) and NiCrAlX (X:Y or YSi) bond coating were deposited on Hastelloy C-276 substrate by High Velocity Oxygen Fuel (HVOF) method. Isothermal oxidation was carried out at 1000 °C for 100 hours. The results showed that the addition of RE could prevent the breakaway oxidation. Therefore, the coating with reactive element were more protective against high temperature oxidation. Furthermore, the oxidation rate of NiCrAlY coating was lower than NiCrAlYSi coating with the total mass change was ±2.394 mg/cm2 after 100 hours of oxidation. The thickness of oxide scale was approximately 1.18 μm consisting of duplex oxide scale of spinel NiCr2O4 in outer scale and protective α-Al2O3 in inner scale.

Experimental evidence of the impact of rare-earth elements on particle growth and mechanical behaviour of silicon nitride

International Nuclear Information System (INIS)

Satet, Raphaelle L.; Hoffmann, Michael J.; Cannon, Rowland M.

2006-01-01

The impact of various rare-earth and related doping elements (R = Lu, Sc, Yb, Y, Sm, La) on the grain growth anisotropy and the mechanical properties of polycrystalline β-silicon nitride ceramics has been studied. Model experiments, in which Si 3 N 4 particles can grow freely in an R-Si-Mg-oxynitride glass matrix, show that, with increasing ionic radius of the additive, grain anisotropy increases due to non-linear growth kinetics. Toughness and strength are affected by the rare-earth element. Samples of equivalent grain sizes and morphologies yield an increasing toughness with increasing ion size of the R 3+ , reflecting an increasingly intergranular crack path. These samples are also strong and flaw tolerant, but the trends of strength and toughness do not exactly match. The choice of the rare-earth is essential to tailor microstructure, interfacial strength and mechanical properties. However, somewhat different trends for properties from IIIb and lanthanide additives indicate that more than the R 3+ size (i.e., purely ionic bond strength between R 3+ and its neighbours) is important. The electronic structure of the R-element is responsible for the type of dopant adsorption and the properties of the interface

The two sides of silicon detectors

International Nuclear Information System (INIS)

Devine, S.R.

2001-10-01

Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

Energy Technology Data Exchange (ETDEWEB)

Mabrook, M.F. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)], E-mail: m.f.mabrook@durham.ac.uk; Jombert, A.S. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Machin, S.E.; Pearson, C.; Kolb, D. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Coleman, K.S. [Department of Chemistry, Durham University, South Road, Durham DH1 3LE (United Kingdom); Zeze, D.A.; Petty, M.C. [School of Engineering and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

2009-03-15

We report on the electrical behaviour of metal-insulator-semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C{sub 60}, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C{sub 60}/SiO{sub 2}/Si structure between 4 and -4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

Electronic Transmutation (ET): Chemically Turning One Element into Another.

Science.gov (United States)

Zhang, Xinxing; Lundell, Katie A; Olson, Jared K; Bowen, Kit H; Boldyrev, Alexander I

2018-03-08

The concept of electronic transmutation (ET) depicts the processes that by acquiring an extra electron, an element with the atomic number Z begins to have properties that were known to only belong to its neighboring element with the atomic number Z+1. Based on ET, signature compounds and chemical bonds that are composed of certain elements can now be designed and formed by other electronically transmutated elements. This Minireview summarizes the recent developments and applications of ET on both the theoretical and experimental fronts. Examples on the ET of Group 13 elements into Group 14 elements, Group 14 elements into Group 15 elements, and Group 15 elements into Group 16 elements are discussed. Compounds and chemical bonding composed of carbon, silicon, germanium, phosphorous, oxygen and sulfur now have analogues using transmutated boron, aluminum, gallium, silicon, nitrogen, and phosphorous. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A study of the performance of tight-binding models for silicon and silicon-germanium alloys

Science.gov (United States)

Roberts, Amanda Killen

1998-11-01

An important challenge in achieving small-scale semiconductor devices is to confine dopants to small, well-defined regions because device performance depends on their accurate placement. However, semiconductor processing involves repeated annealing cycles which can cause dopants to diffuse away from their intended locations. For this reason, it is important to understand the basic physical processes of dopant diffusion on atomic length scales. Tight binding models offer the possibility of studying diffusion in larger systems and for longer time scales than is possible with current LDA methods. However, while a wide variety of tight binding models exist for silicon, these models are not necessarily suited for dynamical studies and they are rarely extended to elements which are dopants in silicon, or to multicomponent systems. This dissertation addresses these issues. We present the first systematic comparison of three parameterized, two-center, sp-based, tight binding models which, because of their simplicity, are suitable for dynamical studies. The models we considered are those by Goodwin et al. (GSP), Kwon et al., and Sawada. We evaluated these models for Si to determine their relative strengths and weaknesses in comparison to experimental and LDA results. Our results show that none of these models is outstanding over the others, and all give acceptable representations of the properties of Si which are of interest for dynamical studies. Having carefully investigated the fitting process to find simple ways to fit tight binding parameters, we have provided information as to the role of each of the GSP parameters in the fitting procedure. As a result, we have recorded a detailed prescription for fitting which can be followed by researchers wanting to extend the models to additional species. Based on our findings about the performance of the Si models, we extended the GSP model to second-nearest neighbors and produced new parameter sets for Si, Ge, and SiGe. This has

Canonical-ensemble extended Lagrangian Born-Oppenheimer molecular dynamics for the linear scaling density functional theory.

Science.gov (United States)

Hirakawa, Teruo; Suzuki, Teppei; Bowler, David R; Miyazaki, Tsuyoshi

2017-10-11

We discuss the development and implementation of a constant temperature (NVT) molecular dynamics scheme that combines the Nosé-Hoover chain thermostat with the extended Lagrangian Born-Oppenheimer molecular dynamics (BOMD) scheme, using a linear scaling density functional theory (DFT) approach. An integration scheme for this canonical-ensemble extended Lagrangian BOMD is developed and discussed in the context of the Liouville operator formulation. Linear scaling DFT canonical-ensemble extended Lagrangian BOMD simulations are tested on bulk silicon and silicon carbide systems to evaluate our integration scheme. The results show that the conserved quantity remains stable with no systematic drift even in the presence of the thermostat.

Micropatterned arrays of porous silicon: toward sensory biointerfaces.

Science.gov (United States)

Flavel, Benjamin S; Sweetman, Martin J; Shearer, Cameron J; Shapter, Joseph G; Voelcker, Nicolas H

2011-07-01

We describe the fabrication of arrays of porous silicon spots by means of photolithography where a positive photoresist serves as a mask during the anodization process. In particular, photoluminescent arrays and porous silicon spots suitable for further chemical modification and the attachment of human cells were created. The produced arrays of porous silicon were chemically modified by means of a thermal hydrosilylation reaction that facilitated immobilization of the fluorescent dye lissamine, and alternatively, the cell adhesion peptide arginine-glycine-aspartic acid-serine. The latter modification enabled the selective attachment of human lens epithelial cells on the peptide functionalized regions of the patterns. This type of surface patterning, using etched porous silicon arrays functionalized with biological recognition elements, presents a new format of interfacing porous silicon with mammalian cells. Porous silicon arrays with photoluminescent properties produced by this patterning strategy also have potential applications as platforms for in situ monitoring of cell behavior.

Nickel-chromium-silicon brazing filler metal

Science.gov (United States)

Martini, Angelo J.; Gourley, Bruce R.

1976-01-01

A brazing filler metal containing, by weight percent, 23-35% chromium, 9-12% silicon, a maximum of 0.15% carbon, and the remainder nickel. The maximum amount of elements other than those noted above is 1.00%.

Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon

Science.gov (United States)

2015-11-01

Platinum Electrodes for Metal Assisted Etching of Porous Silicon by Matthew H Ervin and Brian Isaacson Sensors and Electron Devices Directorate...SUBTITLE Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

Energy Technology Data Exchange (ETDEWEB)

Kuisseu, Pauline Sylvia Pokam, E-mail: pauline-sylvia.pokam-kuisseu@cnrs-orleans.fr [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Pingault, Timothée; Ntsoenzok, Esidor [CEMHTI-CNRS, 3A, rue de la férollerie, 45071 Orléans (France); Regula, Gabrielle [IM2NP-CNRS-Université d’Aix-Marseille, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Mazen, Frédéric [CEA-Leti, MINATEC campus, 17, rue des Martyrs, 38054 Grenoble Cedex 9 (France); Sauldubois, Audrey [Université d’Orléans, rue de Chartres – Collegium ST, 45067 Orléans (France); Andreazza, Caroline [ICMN-CNRS-Université d’Orléans, 1b rue de la férollerie, 45071 Orléans (France)

2017-06-15

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 µm and 100 µm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 10{sup 16} H/cm{sup 2} to 2 × 10{sup 17} H/cm{sup 2} and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5–0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Aleksandrov, O. V.

2006-01-01

A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

Tin - an unlikely ally for silicon field effect transistors?

KAUST Repository

Hussain, Aftab M.

2014-01-13

We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development and basic photovoltaic characteristics of a solar generator with double-sided silicon cells

International Nuclear Information System (INIS)

Aliev, R.; Mansurov, Kh.

2015-01-01

A new solar generator consisting of double-sided silicon sensing elements is described. The basic photovoltaic parameters of solar generators are made of mono- and polycrystalline silicon solar cells. (author)

Correlation Between Grain Size Distribution and Silicon and Oxygen Contents at Wadi Arar Sediments, Kingdom of Saudi Arabia

Directory of Open Access Journals (Sweden)

M. A. M. Alghamdi

2017-08-01

Full Text Available Quartz is the major mineral of Wadi Arar sediments. The top two elements contents are oxygen with 63.96 wt%, followed by silicon with 16.35 wt%. There is a positive, weak to medium correlation between grain size and silicon and oxygen contents. The correlation between oxygen and grain size is four times higher than that of silicon. At grain size ranges between 0.8 and 1.0 mm, both oxygen and silicon show the maximum correlation, which decrease gradually with finer and coarser grain sizes. For each element, the correlation between the element content and grain size is a fourth degree polynomial in the grain size. Theoretically, the best two math models that represent the relation between the grain size distribution and each of individual oxygen and silicon content are y=8.84∙ln(x+39.5 and y=2.26∙ln(x+10.1 respectively, where y represents the element content percentage and x represents the corresponding grain size in mm.

Barrier layer arrangement for conductive layers on silicon substrates

International Nuclear Information System (INIS)

Hung, L.S.; Agostinelli, J.A.

1990-01-01

This patent describes a circuit element comprised of a silicon substrate and a conductive layer located on the substrate. It is characterized in that the conductive layer consists essentially of a rare earth alkaline earth copper oxide and a barrier layer triad is interposed between the silicon substrate and the conductive layer comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of a least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at lease one Group 4 heavy metal oxide

Alloyed Aluminum Contacts for Silicon Solar Cells

International Nuclear Information System (INIS)

Tin Tin Aye

2010-12-01

Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

Characterization of electrical and optical properties of silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Jia, Guobin

2009-12-04

In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

Full-color OLED on silicon microdisplay

Science.gov (United States)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

Recent progress in low-temperature silicon detectors

International Nuclear Information System (INIS)

Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

2003-01-01

The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

Preventing light-induced degradation in multicrystalline silicon

Science.gov (United States)

Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

2014-04-01

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

International Nuclear Information System (INIS)

Aken, P.A. van; Sharp, T.G.; Seifert, F.

1998-01-01

The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R∼0.172 nm and N∼5) to R∼0.167 nm and N∼4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of σ N 2 ∼83.8pm 2 as it changes from σ st 2 =51.8pm 2 for sixfold to σ qu 2 =18.4pm 2 for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours. Using the EXELFS data for amorphization, a new method is developed to derive the relative amounts of Si coordinations in high-pressure minerals with mixed coordination. For the radiation-induced amorphization process of

Risk of corneal inflammatory events with silicone hydrogel and low dk hydrogel extended contact lens wear: a meta-analysis.

Science.gov (United States)

Szczotka-Flynn, Loretta; Diaz, Mireya

2007-04-01

High Dk silicone hydrogel (SH) lenses have been shown to significantly decrease the risk of hypoxic complications compared to traditional low Dk hydrogels. However, the risks of inflammatory complications with SH compared to low Dk lenses are not as clear. A meta-analysis was performed to combine the relevant literature to evaluate the risks of corneal inflammatory events in users of SH and low Dk hydrogel extended wear lenses. A systematic search was conducted using online databases, unpublished meeting abstracts, and retrieval of other cited references presented or published between 1990 and February 2006. Each study was evaluated for quality in terms of the research question, and these quality assessments were used to determine which studies should be used in subgroup analyses. A generalized linear mixed model framework with an underlying Poisson distribution for the occurrence of events was employed to combine information from the included studies. Twenty-three studies published or presented on either or both arms by February 2006 were selected for analysis. A total of 9,336 subjects and 18,537 eyes comprised the entire sample. Seven studies were published in the 1990s. Eighteen studies (78%) were prospective, and 11 (48%) used randomization. The follow-up ranged from 4 to 36 months, with a median of 12 months. The rates of infiltrates for low Dk hydrogels and SH lenses were 7.7 (2.2, 26.7) and 14.4 (4.3, 48.2) per 100 eye-years, respectively. In the subset of five best quality studies, the unadjusted risk ratio for corneal inflammatory events for SH lenses compared to low Dk lenses was 2.18 (p Dk extended wear lenses when typically worn for 7 days extended wear. The increased risk cannot be definitively linked to SH lens materials because the effect of material on outcome is confounded by length of wear.

Laser annealing of ion implanted silicon

International Nuclear Information System (INIS)

White, C.W.; Narayan, J.; Young, R.T.

1978-11-01

The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

Extended Year, Extended Contracts: Increasing Teacher Salary Options.

Science.gov (United States)

Gandara, Patricia

1992-01-01

Reports on an attempt to raise teacher salaries through an extended contract made possible through year-round school schedules. Teacher satisfaction with the 1987 experiment in three California schools (the Orchard Plan) has been high. Elements that have contributed to job satisfaction are discussed. (SLD)

A novel phosphorylcholine-coated contact lens for extended wear use.

Science.gov (United States)

Court, J L; Redman, R P; Wang, J H; Leppard, S W; Obyrne, V J; Small, S A; Lewis, A L; Jones, S A; Stratford, P W

2001-12-01

The preparation and characterisation of a new phosphorylcholine (PC)-coated silicone hydrogel contact lens for use in extended wear is described. The Michael-type addition of amines to acrylates forms the basis of the synthesis of a novel silicone-based macromer with hydrophilic functionality. It is demonstrated that this macromer can be combined with other silicone-based monomers, hydrophilic monomers and crosslinker to produce a contact lenses formulation. Examples of lenses with water contents of 33% and 46% are illustrated and their properties compared to other commercially available lenses. Materials with comparatively low modulus (2-4MPa) with excellent elongation to break (>200%) can be obtained using this technology. In addition to the mechanical aspects. both the oxygen and solute permeabilities of the material can be controlled by the hydrophilic: hydrophobic monomer balance in the formulation. to obtain materials with attributes suitable for extended wear use. The PC coating is achieved by means of an in-mould coating (IMC) technique that produces a uniform and stable surface as determined by staining and XPS. The coating imparts both improved lens wettability (advancing contact angle of approximately 50 with virtually no hysteresis) and lower protein adsorption relative to the uncoated lens.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Use of silicon for skin and hair care: an approach of chemical forms available and efficacy.

Science.gov (United States)

Araújo, Lidiane Advincula de; Addor, Flavia; Campos, Patrícia Maria Berardo Gonçalves Maia

2016-01-01

Silicon is the second most abundant element on Earth, and the third most abundant trace element in human body. It is present in water, plant and animal sources. On the skin, it is suggested that silicon is important for optimal collagen synthesis and activation of hydroxylating enzymes, improving skin strength and elasticity. Regarding hair benefits, it was suggested that a higher silicon content in the hair results in a lower rate of hair loss and increased brightness. For these beneficial effects, there is growing interest in scientific studies evaluating the efficacy and safety of using dietary supplements containing silicon. Its use aims at increasing blood levels of this element and improving the skin and its annexes appearance. There are different forms of silicon supplements available and the most important consideration to be made in order to select the best option is related to safety and bioavailability. Silicon supplements are widely used, though there is wide variation in silicon bioavailability, ranging from values below 1% up to values close to 50%, depending on the chemical form. Therefore, the aim of this study was to evaluate the scientific literature related to the different chemical forms of silicon supplements available and the limitations and recent progress in this field. According to reported studies, among the different chemical forms available, the orthosilicic acid (OSA) presents the higher bioavailability, whereas the others forms have absorption inversely proportional to the degree of polymerization. However, clinical studies evaluating safety and efficacy are still lacking.

Silicon Detector System for High Rate EXAFS Applications

OpenAIRE

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

1995-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWH...

Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

Energy Technology Data Exchange (ETDEWEB)

Kirsanov, N. Yu.; Latukhina, N. V., E-mail: natalat@yandex.ru; Lizunkova, D. A.; Rogozhina, G. A. [Samara National Research University (Russian Federation); Stepikhova, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2017-03-15

The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 μm is higher than in structures free of REEs. The structures with Er{sup 3+} ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 μm. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the {sup 4}I{sub 15/2} multiplet of the Er{sup 3+} ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 μm).

Next generation structural silicone glazing

Directory of Open Access Journals (Sweden)

Charles D. Clift

2015-06-01

Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

Efficient Linear and Non-Linear Finite Element Formulation using a New Local Enhancement of Displacement Fields for Triangular Elements

DEFF Research Database (Denmark)

Damkilde, Lars; Pedersen, Ronnie

2012-01-01

This paper describes a new triangular plane element which can be considered as a linear strain triangular element (LST) extended with incompatible displacement modes. The extended element will have a full cubic interpolation of strains and stresses. The extended LST-element is connected with other...... elements similar to the LST-element i.e. through three corner nodes and three mid-side nodes. The incompatible modes are associated with two displacement gradients at each mid-side node and displacements in the central node. The element passes the patch test and converges to the exact solution. The element...... often show a very slow convergence, and the numerical solutions will in general overestimate the bearing capacity and underestimate the displacements. The examples show that the extended incompatible element behaves much better than the corresponding compatible elements especially for coarse meshes....

Nonclassical light sources for silicon photonics

Science.gov (United States)

Bajoni, Daniele; Galli, Matteo

2017-09-01

Quantum photonics has recently attracted a lot of attention for its disruptive potential in emerging technologies like quantum cryptography, quantum communication and quantum computing. Driven by the impressive development in nanofabrication technologies and nanoscale engineering, silicon photonics has rapidly become the platform of choice for on-chip integration of high performing photonic devices, now extending their functionalities towards quantum-based applications. Focusing on quantum Information Technology (qIT) as a key application area, we review recent progress in integrated silicon-based sources of nonclassical states of light. We assess the state of the art in this growing field and highlight the challenges that need to be overcome to make quantum photonics a reliable and widespread technology.

The influence of diffusion of fluorine compounds for silicon lateral etching

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick; Goodyear, Alec; Braithwaite, Nicholas St.John

2004-07-01

In an earlier study, it was proposed that long-range surface transport of fluorine atoms could precede the eventual binding to a silicon atom. The rate of binding increases if the silicon is bombarded with high energy ions. In this study, the lateral etching of a silicon layer, sandwiched between two silicon dioxide layers, was studied in order to investigate and extend these hypotheses. The under etching of the silicon layer was higher for wafers which suffered ion bombardment, showing that this mechanism is important even for horizontal etching. At the same time, the thickness of the silicon layer was varied. In all cases, the thinner silicon layer etched much faster then the thicker layer, indicating that fluorine surface transport is much more important than re-emission for these processes. The etch rate increase with ion bombardment can be explained by the fact that part of the energy of the incoming ions is transferred to the fluorine compounds which are on the horizontal surfaces and that ion bombardment enhances the fluorine surface transport.

A study on the effect of silicon content on mechanical properties

International Nuclear Information System (INIS)

Kwon, C.T.; Nam, T.W.; Lee, S.I.

1978-01-01

In Al-Si alloy, the variation of mechanical properties with silicon contents was investigated the silicon content being varied from 5% to 25%, and the effects of additives and refining elements were also studied. The results obtained are as follows: 1) Sodium treatment made the primary silicon crystals refined and spheroidized, and made the matrix structure intensified. The effect of P treatment on refining primary silicon crystals was greater then that of Na. 2) Tensile strength showed the maximum value at near the eutectic composition and was improved considerably by addition of Mg and treatment with Na. 3) The variation of matrix hardness with silicon contents was not perceptible and the hardness was improved by addition of Mg and treatment with Na. (author)

Al transmon qubits on silicon-on-insulator for quantum device integration

Science.gov (United States)

Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar

2017-07-01

We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.

Non-fossil reduction materials in the silicon process - properties and behaviour

Energy Technology Data Exchange (ETDEWEB)

Myrhaug, Edin Henrik

2003-07-01

The purpose of this work has been to clarify the effect of using biocarbon as a reduction material in the silicon process. It was decided to compare the biocarbon with fossil carbon and find possible differences both on process performance and eventually on product quality. The elements in the raw materials added to the silicon process goes into three different products: silicon metal, silica dust and into open air. Based on analysis of raw materials and of produced silicon metal and microsilica extensive material balances have been established. One important result from these are the distribution factors that indicate how much of the trace elements that goes into each medium. Another result is that the boiling point of an element or a compound gives a good indication of were it ends. A high boiling point indicates that the element ends up in the silicon metal, while a low boiling point indicates that the element goes with off-gas into air. With an intermediate boiling point, the element goes into the silica dust. The SiO-reactivity of the reduction materials are commonly acknowledged to affect strongly the productivity and consumption figures of the silicon process. Based on data from thermogravimetric experiments with chemical reaction between carbonaceous spheres and SiO-gas, kinetic parameters have been estimated from the shrinking core model for some selected reduction materials of various sizes and spanning a wide range of SiO-reactivity figures. This model describes the degree of conversion versus time for a single sphere where the chemical reaction progresses in a topochemical manner from the outer surface of the solid towards the centre forming a porous product layer around an unreacted shrinking core. This behaviour is for the selected reduction materials to a large extent supported by an investigation of cross section pictures of fully and 50% converted spheres obtained with a microprobe. The estimated kinetic parameters obtained from the

Use of silicon for skin and hair care: an approach of chemical forms available and efficacy*

Science.gov (United States)

de Araújo, Lidiane Advincula; Addor, Flavia; Campos, Patrícia Maria Berardo Gonçalves Maia

2016-01-01

Silicon is the second most abundant element on Earth, and the third most abundant trace element in human body. It is present in water, plant and animal sources. On the skin, it is suggested that silicon is important for optimal collagen synthesis and activation of hydroxylating enzymes, improving skin strength and elasticity. Regarding hair benefits, it was suggested that a higher silicon content in the hair results in a lower rate of hair loss and increased brightness. For these beneficial effects, there is growing interest in scientific studies evaluating the efficacy and safety of using dietary supplements containing silicon. Its use aims at increasing blood levels of this element and improving the skin and its annexes appearance. There are different forms of silicon supplements available and the most important consideration to be made in order to select the best option is related to safety and bioavailability. Silicon supplements are widely used, though there is wide variation in silicon bioavailability, ranging from values below 1% up to values close to 50%, depending on the chemical form. Therefore, the aim of this study was to evaluate the scientific literature related to the different chemical forms of silicon supplements available and the limitations and recent progress in this field. According to reported studies, among the different chemical forms available, the orthosilicic acid (OSA) presents the higher bioavailability, whereas the others forms have absorption inversely proportional to the degree of polymerization. However, clinical studies evaluating safety and efficacy are still lacking. PMID:27438201

Nanostructured silicon anodes for lithium ion rechargeable batteries.

Science.gov (United States)

Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil

2009-10-01

Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.

Extending the dynamic range of silicon photomultipliers without increasing pixel count

International Nuclear Information System (INIS)

Johnson, Kurtis F.

2010-01-01

A silicon photomultiplier, sometimes called 'multipixel photon counter', which we here refer to as a 'SiPM', is a photo-sensitive device built from an avalanche photodiode array of pixels on a common silicon substrate, such that it can detect single photon events. The dimensions of a pixel may vary from 20 to 100 μm and their density can be greater than 1000 per square millimeter. Each pixel in a SiPM operates in Geiger mode and is coupled to the output by a quenching resistor. Although each pixel operates in digital mode, the SiPM is an analog device because all the pixels are read in parallel, making it possible to generate signals within a dynamic range from a single photon to a large number of photons, ultimately limited by the number of pixels on the chip. In this note we describe a simple and general method of increasing the dynamic range of a SiPM beyond that one may naively assume from the shape of the cumulative distribution function of the SiPM response to the average number of photons per pixel. We show that by rendering the incoming flux of photons to be non-uniform in a prescribed manner, a significant increase in dynamic range is achievable. Such re-distribution of the incoming flux may be accomplished with simple, non-focusing lenses, prisms, interference films, mirrors or attenuating films. Almost any optically non-inert interceding device can increase the dynamic range of the SiPM.

The BaBar silicon vertex tracker, performance and running experience

CERN Document Server

Re, V; Bozzi, C; Carassiti, V; Cotta-Ramusino, A; Piemontese, L; Breon, A B; Brown, D; Clark, A R; Goozen, F; Hernikl, C; Kerth, L T; Gritsan, A; Lynch, G; Perazzo, A; Roe, N A; Zizka, G; Roberts, D; Schieck, J; Brenna, E; Citterio, M; Lanni, F; Palombo, F; Ratti, L; Manfredi, P F; Angelini, C; Batignani, G; Bettarini, S; Bondioli, M; Bosi, F; Bucci, F; Calderini, G; Carpinelli, M; Ceccanti, M; Forti, F; Gagliardi, D J; Giorgi, M A; Lusiani, A; Mammini, P; Morganti, M; Morsani, F; Neri, N; Paoloni, E; Profeti, A; Rama, M; Rizzo, G; Sandrelli, F; Simi, G; Triggiani, G; Walsh, J; Burchat, Patricia R; Cheng, C; Kirkby, D; Meyer, T I; Roat, C; Bóna, M; Bianchi, F; Gamba, D; Trapani, P; Bosisio, L; Della Ricca, G; Dittongo, S; Lanceri, L; Pompili, A; Poropat, P; Rashevskaia, I; Vuagnin, G; Burke, S; Callahan, D; Campagnari, C; Dahmes, B; Hale, D; Hart, P; Kuznetsova, N; Kyre, S; Levy, S; Long, O; May, J; Mazur, M; Richman, J; Verkerke, W; Witherell, M; Beringer, J; Eisner, A M; Frey, A; Grillo, A A; Grothe, M; Johnson, R P; Kröger, W; Lockman, W S; Pulliam, T; Rowe, W; Schmitz, R E; Seiden, A; Spencer, E N; Turri, M; Walkowiak, W; Wilder, M; Wilson, M; Charles, E; Elmer, P; Nielsen, J; Orejudos, W; Scott, I; Zobernig, H

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies.

The BaBar silicon vertex tracker, performance and running experience

International Nuclear Information System (INIS)

Re, V.; Borean, C.; Bozzi, C.; Carassiti, V.; Cotta Ramusino, A.; Piemontese, L.; Breon, A.B.; Brown, D.; Clark, A.R.; Goozen, F.; Hernikl, C.; Kerth, L.T.; Gritsan, A.; Lynch, G.; Perazzo, A.; Roe, N.A.; Zizka, G.; Roberts, D.; Schieck, J.; Brenna, E.; Citterio, M.; Lanni, F.; Palombo, F.; Ratti, L.; Manfredi, P.F.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Bosi, F.; Bucci, F.; Calderini, G.; Carpinelli, M.; Ceccanti, M.; Forti, F.; Gagliardi, D.; Giorgi, M.A.; Lusiani, A.; Mammini, P.; Morganti, M.; Morsani, F.; Neri, N.; Paoloni, E.; Profeti, A.; Rama, M.; Rizzo, G.; Sandrelli, F.; Simi, G.; Triggiani, G.; Walsh, J.; Burchat, P.; Cheng, C.; Kirkby, D.; Meyer, T.I.; Roat, C.; Bona, M.; Bianchi, F.; Gamba, D.; Trapani, P.; Bosisio, L.; Della Ricca, G.; Dittongo, S.; Lanceri, L.; Pompili, A.; Poropat, P.; Rashevskaia, I.; Vuagnin, G.; Burke, S.; Callahan, D.; Campagnari, C.; Dahmes, B.; Hale, D.; Hart, P.; Kuznetsova, N.; Kyre, S.; Levy, S.; Long, O.; May, J.; Mazur, M.; Richman, J.; Verkerke, W.; Witherell, M.; Beringer, J.; Eisner, A.M.; Frey, A.; Grillo, A.A.; Grothe, M.; Johnson, R.P.; Kroeger, W.; Lockman, W.S.; Pulliam, T.; Rowe, W.; Schmitz, R.E.; Seiden, A.; Spencer, E.N.; Turri, M.; Walkowiak, W.; Wilder, M.; Wilson, M.; Charles, E.; Elmer, P.; Nielsen, J.; Orejudos, W.; Scott, I.; Zobernig, H.

2002-01-01

The Silicon Vertex Tracker (SVT) of the BaBar experiment at the PEP-II asymmetric B factory is a five-layer double-sided, AC-coupled silicon microstrip detector. It represents the crucial element to precisely measure the decay position of B mesons and extract time-dependent CP asymmetries. The SVT architecture is shown and its performance is described, with emphasis on hit resolutions and efficiencies

Annealing damage caused by implantation of group IB elements into silicon

International Nuclear Information System (INIS)

Johansen, A.; Svenningsen, B.; Chadderton, L.T.; Whitton, J.L.

1976-01-01

Transmission electron microscopy (TEM) and the Rutherford backscattering method (RBS) have been used in an investigation of the annealing of radiation damage produced in silicon by 80 keV Cu + , Ag + and Au + ions up to doses of 10 15 ions/cm 2 . Whilst the damage caused by Cu + and Ag + implantation, measured by RBS, persists following annealing sequences up to temperatures of 800 0 C, Au + -implanted samples show recovery. Furthermore, RBS indicates quite clearly that, in the case of gold, atomic diffusion to the silicon surface takes place. TEM and electron diffraction both indicate that in all three implants the anomalous 'damage' remaining in RBS spectra is due to an amorphous-polycrystalline transition. In the case of Au + implants, however, there is less inhibition of the process of recovery, quite apart from the thermal history of the sample. The importance of using another technique, especially TEM, in conjunction with RBS investigations of radiation damage in the solid state is emphasized. (author)

Trace element analysis in silicon by accelerator SIMS

Energy Technology Data Exchange (ETDEWEB)

Ender, R.M.; Suter, M. [Eidgenoessische Technische Hochschule, Zurich (Switzerland); Doebeli, M.; Synal, H.A. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

The accelerator SIMS technique has been applied to Si samples implanted with different elements. It has been shown that concentrations of several trace elements can be analysed down to about 1 ppb in depth profiling mode. (author) 2 figs., 1 ref.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Resistivity and thickness effects in dendritic web silicon solar cells

Science.gov (United States)

Meier, D. L.; Hwang, J. M.; Greggi, J.; Campbell, R. B.

1987-01-01

The decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.

Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

International Nuclear Information System (INIS)

Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

2014-01-01

The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

13th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B. L.; Rand, J.; Saitoh, T.; Sinton, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.; Al-Jassim, M.

2003-08-01

The 13th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. It will offer an excellent opportunity for researchers in private industry and at universities to prioritize mutual needs for future collaborative research. The workshop is intended to address the fundamental aspects of impurities and defects in silicon: their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. A combination of oral, poster, and discussion sessions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands.

Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

Science.gov (United States)

van Aken, P. A.; Sharp, T. G.; Seifert, F.

The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, verified by selected area electron diffraction (SAED), produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters (Si-O bond distances, coordination numbers and Debye-Waller factors). The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R 0.172 nm and N 5) to R 0.167 nm and N 4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of as it changes from for sixfold to for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours that is consistent with the presence of an intermediate structural state with fivefold coordination of Si. The distribution of coordination states can be estimated by

Wavelength conversion of a 128 Gbit/s DP-QPSK signal in a silicon polarization diversity circuit

DEFF Research Database (Denmark)

Vukovic, Dragana; Schroeder, Jochen; Ding, Yunhong

2014-01-01

Wavelength conversion of a 128 Gbit/s DP-QPSK signal is demonstrated using FWM in a polarization diversity circuit with silicon nanowires as nonlinear elements. Error-free performances are achieved with a negligible power penalty.......Wavelength conversion of a 128 Gbit/s DP-QPSK signal is demonstrated using FWM in a polarization diversity circuit with silicon nanowires as nonlinear elements. Error-free performances are achieved with a negligible power penalty....

Structural elements for fast-neutron reactors

International Nuclear Information System (INIS)

Blin, J.C.; Sainfort, Gerard; Silvent, Alain; Silvestres, Georges.

1974-01-01

These elements are characterized in that they are obtained from a nickel-alloy and at least a material M, selected from the group comprising iron and silicon, in proportions, by weight, such that irradiation by fast neutrons leads to the generation of Ni 3 -M with no noticeable swelling of said elements. This can be applied to fuel assembly cladding [fr

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

Energy Technology Data Exchange (ETDEWEB)

Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

Process for making silicon from halosilanes and halosilicons

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Isotopically varying spectral features of silicon-vacancy in diamond

International Nuclear Information System (INIS)

Dietrich, Andreas; Jahnke, Kay D; Binder, Jan M; Rogers, Lachlan J; Jelezko, Fedor; Teraji, Tokuyuki; Isoya, Junichi

2014-01-01

The silicon-vacancy centre (SiV − ) in diamond has exceptional spectral properties for single-emitter quantum information applications. Most of the fluorescence is concentrated in a strong zero phonon line (ZPL), with a weak phonon sideband extending for 100 nm that contains several clear features. We demonstrate that the ZPL position can be used to reliably identify the silicon isotope present in a single SiV − centre. This is of interest for quantum information applications since only the 29 Si isotope has nuclear spin. In addition, we show that the sharp 64 meV phonon peak is due to a local vibrational mode of the silicon atom. The presence of a local mode suggests a plausible origin of the measured isotopic shift of the ZPL. (paper)

Effect of copper on the recombination activity of extended defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Feklisova, O. V., E-mail: feklisov@iptm.ru; Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

2015-06-15

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

Silicon isotopes in angrites and volatile loss in planetesimals

OpenAIRE

Pringle, Emily A.; Moynier, Frédéric; Savage, Paul S.; Badro, James; Barrat, Jean-Alix

2014-01-01

Understanding volatile elements in the early solar system is a key step toward understanding the processes of planetary formation and the composition of Earth, but the origin of volatiles on Earth is not well understood. In this article, we present measurements of silicon isotope ratios in angrites, a class of meteorites dating from the first few million years after condensation of solids from the solar nebula. We show that the silicon isotope composition of angrites is consistent with a depl...

Mechanical engineering and design of silicon-based particle tracking devices

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

1990-01-01

The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Deformation mechanisms of silicon during nanoscratching

Energy Technology Data Exchange (ETDEWEB)

Gassilloud, R.; Gasser, P.; Buerki, G.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Ballif, C. [University of Neuchatel, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

2005-12-01

The deformation mechanisms of silicon {l_brace}001{r_brace} surfaces during nanoscratching were found to depend strongly on the loading conditions. Nanoscratches with increasing load were performed at 2 {mu}m/s (low velocity) and 100 {mu}m/s (high velocity). The load-penetration-distance curves acquired during the scratching process at low velocity suggests that two deformation regimes can be defined, an elasto-plastic regime at low loads and a fully plastic regime at high loads. High resolution scanning electron microscopy of the damaged location shows that the residual scratch morphologies are strongly influenced by the scratch velocity and the applied load. Micro-Raman spectroscopy shows that after pressure release, the deformed volume inside the nanoscratch is mainly composed of amorphous silicon and Si-XII at low scratch speeds and of amorphous silicon at high speeds. Transmission electron microscopy shows that Si nanocrystals are embedded in an amorphous matrix at low speeds, whereas at high speeds the transformed zone is completely amorphous. Furthermore, the extend of the transformed zone is almost independent of the scratching speed and is delimited by a dislocation rich area that extends about as deep as the contact radius into the surface. To explain the observed phase and defect distribution a contact mechanics based decompression model that takes into account the load, the velocity, the materials properties and the contact radius in scratching is proposed. It shows that the decompression rate is higher at low penetration depth, which is consistent with the observation of amorphous silicon in this case. The stress field under the tip is computed using an elastic contact mechanics model based on Hertz's theory. The model explains the observed shape of the transformed zone and suggests that during load increase, phase transformation takes place prior to dislocation nucleation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of radiation on photo-electric characteristics of silicon photo cells with optical coverings

International Nuclear Information System (INIS)

Madatov, R.S.; Safarov, N.A.; Gasymova, V.G.; Abdurragimov, A.A.; Allahverdiev, A.M.

2003-01-01

In the given work results of measurements volt-ampere and spectral characteristics of silicon photo cells with optical coverings ZnS+Nd 2 O 3 irradiated accelerated electrons with energy 4.5 MeV are carried out. Elements have been made by diffusion of phosphorus in p-silicon with specific resistance 2 Ω·cm. Under condition of illumination from source AMI the photocurrent of short circuit made 40 mA/cm 2 , and a photo voltage of idling 0.52 V, efficiency made 15 %. To receive low reflection in wide area of spectral sensitivity and by that as much as possible to increase efficiency of elements with the help of two-layer coverings. The irradiation of samples was made on linear accelerator EL4-6 at room temperature. It is received, that with increase in a dose of an irradiation the Photocurrent and photo voltage decreases, and speed reduction of a photo-current is stronger, than photo voltage. The critical integrated stream for these elements makes 4·10 12 el/cm 2 . In all researched samples radiating reduction of a voltage of idling in an interval of 10 10 -10 14 el/cm 2 makes 8-10 %. The analysis of spectral characteristics of the irradiated samples show, that reduction of a photocurrent in long-wave areas of a spectrum is connected by creation of radiating defects in a base part of an element. The increase in a critical stream in silicon solar elements with optical a covering in comparison with elements without a covering is connected with low concentration of defects in the base, created with electron. Thus, on the basis of complex research of influence on radiating stability silicon solar elements us it is established, that two-layer coverings not only increases efficiency of photo cells, but also considerably raise value of an integrated stream electrons, that is equivalent to increase in service life of the elements working in conditions of radiation

Superconductivity observed in platinum-silicon interface

Energy Technology Data Exchange (ETDEWEB)

Kuo, Pai-Chia, E-mail: paichia@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Ku-Pin; Shiue, Jessie, E-mail: yshiue@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)

2014-05-26

We report the discovery of superconductivity with an onset temperature of ∼0.6 K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ∼2.5 eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a ∼ 7 nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Amorphous silicon-based microchannel plates

International Nuclear Information System (INIS)

Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

2012-01-01

Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

Extended spectrum β-lactamases, carbapenemases and mobile genetic elements responsible for antibiotics resistance in Gram-negative bacteria.

Science.gov (United States)

El Salabi, Allaaeddin; Walsh, Timothey R; Chouchani, Chedly

2013-05-01

Infectious diseases due to Gram-negative bacteria are a leading cause of morbidity and mortality worldwide. Antimicrobial agents represent one major therapeutic tools implicated to treat these infections. The misuse of antimicrobial agents has resulted in the emergence of resistant strains of Gram-negatives in particular Enterobacteriaceae and non-fermenters; they have an effect not only on a human but on the public health when bacteria use the resistance mechanisms to spread in the hospital environment and to the community outside the hospitals by means of mobile genetic elements. Gram-negative bacteria have become increasingly resistant to antimicrobial agents. They have developed several mechanisms by which they can withstand to antimicrobials, these mechanisms include the production of Extended-spectrum β-lactamases (ESBLs) and carbapenemases, furthermore, Gram-negative bacteria are now capable of spreading such resistance between members of the family Enterobacteriaceae and non-fermenters using mobile genetic elements as vehicles for such resistance mechanisms rendering antibiotics useless. Therefore, addressing the issue of mechanisms of antimicrobial resistance is considered one of most urgent priorities. This review will help to illustrate different resistance mechanisms; ESBLs, carbapenemases encoded by genes carried by mobile genetic elements, which are used by Gram-negative bacteria to escape antimicrobial effect.

Model building with a dynamical volume element in gravity, particle theory and theories of extended object

International Nuclear Information System (INIS)

Guendelman, E.

2004-01-01

Full Text:The Volume Element of Space Time can be considered as a geometrical object which can be independent of the metric. The use in the action of a volume element which is metric independent leads to the appearance of a measure of integration which is metric independent. This can be applied to all known generally coordinate invariant theories, we will discuss three very important cases: 1. 4-D theories describing gravity and matter fields, 2. Parametrization invariant theories of extended objects and 3. Higher dimensional theories including gravity and matter fields. In case 1, a large number of new effects appear: (i) spontaneous breaking of scale invariance associated to integration of degrees of freedom related to the measure, (ii) under normal particle physics laboratory conditions fermions split into three families, but when matter is highly diluted, neutrinos increase their mass and become suitable candidates for dark matter, (iii) cosmic coincidence between dark energy and dark matter is natural, (iv) quintessence scenarios with automatic decoupling of the quintessence scalar to ordinary matter, but not dark matter are obtained (2) For theories or extended objects, the use of a measure of integration independent of the metric leads to (i) dynamical tension, (ii) string models of non abelian confinement (iii) The possibility of new Weyl invariant light-like branes (WTT.L branes). These Will branes dynamically adjust themselves to sit at black hole horizons and in the context of higher dimensional theories can provide examples of massless 4-D particles with nontrivial Kaluza Klein quantum numbers, (3) In Bronx and Kaluza Klein scenarios, the use of a measure independent of the metric makes it possible to construct naturally models where only the extra dimensions get curved and the 4-D observable space-time remain flat

On- and off-resonance radiation-atom-coupling matrix elements involving extended atomic wave functions

Science.gov (United States)

Komninos, Yannis; Mercouris, Theodoros; Nicolaides, Cleanthes A.

2014-01-01

In continuation of our earlier works, we present results concerning the computation of matrix elements of the multipolar Hamiltonian (MPH) between extended wave functions that are obtained numerically. The choice of the MPH is discussed in connection with the broader issue of the form of radiation-atom (or -molecule) interaction that is appropriate for the systematic solution of various problems of matter-radiation interaction. We derive analytic formulas, in terms of the sine-integral function and spherical Bessel functions of various orders, for the cumulative radial integrals that were obtained and calculated by Komninos, Mercouris, and Nicolaides [Phys. Rev. A 71, 023410 (2005), 10.1103/PhysRevA.71.023410]. This development allows the much faster and more accurate computation of such matrix elements, a fact that enhances the efficiency with which the time-dependent Schrödinger equation is solved nonperturbatively, in the framework of the state-specific expansion approach. The formulas are applicable to the general case where a pair of orbitals with angular parts |ℓ1,m1> and |ℓ2,m2> are coupled radiatively. As a test case, we calculate the matrix elements of the electric field and of the paramagnetic operators for on- and off-resonance transitions, between hydrogenic circular states of high angular momentum, whose quantum numbers are chosen so as to satisfy electric dipole and electric quadrupole selection rules. Because of the nature of their wave function (they are nodeless and the large centrifugal barrier keeps their overwhelming part at large distances from the nucleus), the validity of the electric dipole approximation in various applications where the off-resonance couplings must be considered becomes precarious. For example, for the transition from the circular state with n = 20 to that with n = 21, for which ≈400 a.u., the dipole approximation starts to fail already at XUV wavelengths (λ <125nm).

Explicit dynamics for numerical simulation of crack propagation by the extended finite element method

International Nuclear Information System (INIS)

Menouillard, T.

2007-09-01

Computerized simulation is nowadays an integrating part of design and validation processes of mechanical structures. Simulation tools are more and more performing allowing a very acute description of the phenomena. Moreover, these tools are not limited to linear mechanics but are developed to describe more difficult behaviours as for instance structures damage which interests the safety domain. A dynamic or static load can thus lead to a damage, a crack and then a rupture of the structure. The fast dynamics allows to simulate 'fast' phenomena such as explosions, shocks and impacts on structure. The application domain is various. It concerns for instance the study of the lifetime and the accidents scenario of the nuclear reactor vessel. It is then very interesting, for fast dynamics codes, to be able to anticipate in a robust and stable way such phenomena: the assessment of damage in the structure and the simulation of crack propagation form an essential stake. The extended finite element method has the advantage to break away from mesh generation and from fields projection during the crack propagation. Effectively, crack is described kinematically by an appropriate strategy of enrichment of supplementary freedom degrees. Difficulties connecting the spatial discretization of this method with the temporal discretization of an explicit calculation scheme has then been revealed; these difficulties are the diagonal writing of the mass matrix and the associated stability time step. Here are presented two methods of mass matrix diagonalization based on the kinetic energy conservation, and studies of critical time steps for various enriched finite elements. The interest revealed here is that the time step is not more penalizing than those of the standard finite elements problem. Comparisons with numerical simulations on another code allow to validate the theoretical works. A crack propagation test in mixed mode has been exploited in order to verify the simulation

Spot size and pulse number dependence of femtosecond laser ablation thresholds of silicon and stainless steel

Energy Technology Data Exchange (ETDEWEB)

Armbruster, Oskar; Naghilou, Aida [University of Vienna, Department of Physical Chemistry, Währinger Straße 42, A-1090 Vienna (Austria); Kitzler, Markus [TU Wien, Photonics Institute, Gusshausstraße 27-29, A-1040 Vienna (Austria); Kautek, Wolfgang, E-mail: wolfgang.kautek@univie.ac.at [University of Vienna, Department of Physical Chemistry, Währinger Straße 42, A-1090 Vienna (Austria)

2017-02-28

Highlights: • Influence of laser spot size and pulse number on the ablation of solids. • An extended defect model describes the dependence of the threshold fluence on the basis of high and low density defects. • Successfully applied to silicon and stainless steel. - Abstract: Laser spot size and pulse number are two major parameters influencing the ablation of solids. The extended defect model describes the dependence of the threshold fluence on the basis of high and low density defects. This model was successfully applied to silicon and stainless steel. It is demonstrated that heat accumulation cannot describe the experimental results.

Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

International Nuclear Information System (INIS)

Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

2011-01-01

Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Science.gov (United States)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Complete Tangent Stiffness for eXtended Finite Element Method by including crack growth parameters

DEFF Research Database (Denmark)

Mougaard, J.F.; Poulsen, P.N.; Nielsen, L.O.

2013-01-01

the crack geometry parameters, such as the crack length and the crack direction directly in the virtual work formulation. For efficiency, it is essential to obtain a complete tangent stiffness. A new method in this work is presented to include an incremental form the crack growth parameters on equal terms......The eXtended Finite Element Method (XFEM) is a useful tool for modeling the growth of discrete cracks in structures made of concrete and other quasi‐brittle and brittle materials. However, in a standard application of XFEM, the tangent stiffness is not complete. This is a result of not including...... with the degrees of freedom in the FEM‐equations. The complete tangential stiffness matrix is based on the virtual work together with the constitutive conditions at the crack tip. Introducing the crack growth parameters as direct unknowns, both equilibrium equations and the crack tip criterion can be handled...

Silicon accumulation and distribution in petunia and sunflower

Science.gov (United States)

Silicon (Si) is a beneficial element that has been shown to protect plants during periods of abiotic and biotic stress. Plant-available Si can be supplied through substrate components, substrate amendments, liquid fertilization, or foliar sprays. The objective of this study was to compare Si accum...

Carbon Solubility in Silicon-Iron-Bearing Metals during Core Formation on Mercury

Science.gov (United States)

Vander Kaaden, Kathleen E.; McCubbin, Francis M.; Ross, D. Kent; Rapp, Jennifer F.; Danielson, Lisa R.; Keller, Lindsay P.; Righter, Kevin

2016-01-01

Recent results obtained from the MErcury Surface, Space ENvironment, GEochemistry, and Ranging (MESSENGER) spacecraft showed the surface of Mercury has high S abundances (approximately 4 wt%) and low Iron(II) Oxide abundances (less than 2 wt%). Based on these extreme values, the oxygen fugacity of Mercury's surface materials was estimated to be approximately 3 to 7 log(sub 10) units below the IW buffer (Delta IW-3 to Delta IW-7). This highly reducing nature of the planet has resulted in a large core and relatively thin mantle, extending to only approximately 420 km depth (corresponding to a core-mantle boundary pressure of approximately 4-7 GPa) within the planet. Furthermore, MESSENGER results have suggested the presence of carbon on the surface of the planet. Previous experimental results from have also suggested the possibility of a primary floatation crust on Mercury composed of graphite, produced after a global magma ocean event. With these exotic conditions of this compositional end-member planet, it begs the question, what is the core composition of Mercury? Although no definitive conclusion has been reached, previous studies have made advances towards answering this question. Riner et al. and Chen et al. looked at iron sulfide systems and implemented various crystallization and layered core scenarios to try and determine the composition and structure of Mercury's core. Malavergne et al. examined core crystallization scenarios in the presence of sulfur and silicon. Hauck et al. used the most recent geophysical constraints from the MESSENGER spacecraft to model the internal structure of Mercury, including the core, in a iron-sulfur-silicon system. More recently, Chabot et al. conducted a series of metal-silicate partitioning experiments in a iron-sulfur-silicon system. These results showed the core of Mercury has the potential to contain more than 15 wt% silicon. However, with the newest results from MESSENGER's low altitude campaign, carbon is another

All-silicon nanorod-based Dammann gratings.

Science.gov (United States)

Li, Zile; Zheng, Guoxing; He, Ping'An; Li, Song; Deng, Qiling; Zhao, Jiangnan; Ai, Yong

2015-09-15

Established diffractive optical elements (DOEs), such as Dammann gratings, whose phase profile is controlled by etching different depths into a transparent dielectric substrate, suffer from a contradiction between the complexity of fabrication procedures and the performance of such gratings. In this Letter, we combine the concept of geometric phase and phase modulation in depth, and prove by theoretical analysis and numerical simulation that nanorod arrays etched on a silicon substrate have a characteristic of strong polarization conversion between two circularly polarized states and can act as a highly efficient half-wave plate. More importantly, only by changing the orientation angles of each nanorod can the arrays control the phase of a circularly polarized light, cell by cell. With the above principle, we report the realization of nanorod-based Dammann gratings reaching diffraction efficiencies of 50%-52% in the C-band fiber telecommunications window (1530-1565 nm). In this design, uniform 4×4 spot arrays with an extending angle of 59°×59° can be obtained in the far field. Because of these advantages of the single-step fabrication procedure, accurate phase controlling, and strong polarization conversion, nanorod-based Dammann gratings could be utilized for various practical applications in a range of fields.

Extended Life Coolant Testing

Science.gov (United States)

2016-06-06

number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 06-06-2016 2. REPORT TYPE Interim Report 3. DATES COVERED ... Corrosion Testing of Traditional and Extended Life Coolants 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Hansen, Gregory A. T...providing vehicle specific coolants. Several laboratory corrosion tests were performed according to ASTM D1384 and D2570, but with a 2.5x extended time

Sample pretreatment for the determination of metal impurities in silicon wafer

International Nuclear Information System (INIS)

Chung, H. Y.; Kim, Y. H.; Yoo, H. D.; Lee, S. H.

1999-01-01

The analytical results obtained by microwave digestion and acid digestion methods for sample pretreatment to determine metal impurities in silicon wafer by inductively coupled plasma--mass spectrometry(ICP-MS) were compared. In order to decompose the silicon wafer, a mixed solution of HNO 3 and HF was added to the sample and the metal elements were determined after removing the silicon matrix by evaporating silicon in the form of Si-F. The recovery percentages of Ni, Cr and Fe were found to be 95∼106% for both microwave digestion and acid digestion methods. The recovery percentage of Cu obtained by the acid digestion method was higher than that obtained by the microwave digestion method. For Zn, however, the microwave digestion method gave better result than the acid digestion method. Fe was added to a silicon wafer using a spin coater. The concentration of Fe in this sample was determined by ICP-MS, and the same results were obtained in the two pretreatment methods

Characterization and optimization of Silicon Photomultipliers and small size scintillator tiles for future calorimeter applications

CERN Document Server

AUTHOR|(CDS)2095312; Horváth, Ákos

For the active layers of highly granular sampling calorimeters, small scintillator tiles read out by Silicon Photomultipliers (SiPM) can be an interesting and cost effective alternative to silicon sensors. At CERN a test setup was realized for the development of new generations of calorimeters to characterize new types of Silicon Photomultipliers in terms of gain, noise, afterpulses and crosstalk and to study the impact of scintillator wrappings and the tile size on the measured light yield and uniformity. In this thesis work, the experimental setup is described and the steps for commissioning the equipment are discussed. Then, the temperature dependence of the Silicon Photomultiplier response will be investigated, including the dependence of bare Silicon Photomultipliers as well as Silicon Photomultipliers coupled to scintillator tiles. Finally, the tile-photomultiplier response for different tile sizes and coating options will be evaluated. The experimental setup will be extended to allow for the characteri...

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Energy Technology Data Exchange (ETDEWEB)

Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.; Monakhov, Edouard [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo (Norway); Schumann, Thomas; Hübner, Renè; Skorupa, Wolfgang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden (Germany)

2015-07-13

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Directory of Open Access Journals (Sweden)

Sivakumar M.

2015-01-01

Full Text Available In this study the composition of nanostructures generated owing to ablation of crystalline silicon using high repletion rate femtosecond laser under ambient condition is investigated. The web-like silicon fibrous nanostructures are formed in and around the laser irradiated area. Electron Microscopy investigation revealed that the nanostructures are made of nanoparticles of size about 40 nm. In addition Micro-Raman analysis shows that the nanofibrous structures comprises a mixture of amorphous and polycrystalline silicon. X-ray photoelectron spectroscopy analysis reveals the oxidized and un-oxidized elemental states of silicon in the nanostructures. Moreover web-like fibrous nanostructures are generated due to condensation of super saturated vapour and subsequent nucleus growth in the laser induced plasma plume.

Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

Energy Technology Data Exchange (ETDEWEB)

Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

2011-11-15

Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

International Nuclear Information System (INIS)

Montesdeoca-Santana, A.; Gonzalez-Diaz, B.; Jimenez-Rodriguez, E.; Ziegler, J.; Velazquez, J.J.; Hohage, S.; Borchert, D.; Guerrero-Lemus, R.

2011-01-01

Highlights: → An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO 3 stain etching to texture the surface. → FTIR analysis shows no influence of oxide passivation in this effect. → SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. → LBIC images show a reduction in IQE at extended defects in HF/HNO 3 textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO 3 solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

A Review of the Stable Isotope Bio-geochemistry of the Global Silicon Cycle and Its Associated Trace Elements

Directory of Open Access Journals (Sweden)

Jill N. Sutton

2018-01-01

Full Text Available Silicon (Si is the second most abundant element in the Earth's crust and is an important nutrient in the ocean. The global Si cycle plays a critical role in regulating primary productivity and carbon cycling on the continents and in the oceans. Development of the analytical tools used to study the sources, sinks, and fluxes of the global Si cycle (e.g., elemental and stable isotope ratio data for Ge, Si, Zn, etc. have recently led to major advances in our understanding of the mechanisms and processes that constrain the cycling of Si in the modern environment and in the past. Here, we provide background on the geochemical tools that are available for studying the Si cycle and highlight our current understanding of the marine, freshwater and terrestrial systems. We place emphasis on the geochemistry (e.g., Al/Si, Ge/Si, Zn/Si, δ13C, δ15N, δ18O, δ30Si of dissolved and biogenic Si, present case studies, such as the Silicic Acid Leakage Hypothesis, and discuss challenges associated with the development of these environmental proxies for the global Si cycle. We also discuss how each system within the global Si cycle might change over time (i.e., sources, sinks, and processes and the potential technical and conceptual limitations that need to be considered for future studies.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Thermo-mechanically coupled fracture analysis of shape memory alloys using the extended finite element method

Science.gov (United States)

Hatefi Ardakani, S.; Ahmadian, H.; Mohammadi, S.

2015-04-01

In this paper, the extended finite element method is used for fracture analysis of shape memory alloys for both cases of super elastic and shape memory effects. Heat generation during the forward and reverse phase transformations can lead to temperature variation in the material because of strong thermo-mechanical coupling, which significantly influences the SMA mechanical behavior. First, the stationary crack mode is studied and the effects of loading rate on material behavior in the crack tip are examined. Then, the crack propagation analysis is performed in the presence of an initial crack by adopting a weighted averaging criterion, where the direction of crack propagation is determined by weighted averaging of effective stresses at all the integration points in the vicinity of the crack tip. Finally, several numerical examples are analyzed and the obtained results are compared with the available reference results.

Polarization-independent all-silicon dielectric metasurfaces in the terahertz regime

KAUST Repository

Zhang, Huifang

2017-12-11

Dielectric metasurfaces have achieved great success in realizing high-efficiency wavefront control in the optical and infrared ranges. Here, we experimentally demonstrate several efficient, polarization-independent, all-silicon dielectric metasurfaces in the terahertz regime. The metasurfaces are composed of cylindrical silicon pillars on a silicon substrate, which can be easily fabricated using etching technology for semiconductors. By locally tailoring the diameter of the pillars, full control over abrupt phase changes can be achieved. To show the controlling ability of the metasurfaces, an anomalous deflector, three Bessel beam generators, and three vortex beam generators are fabricated and characterized. We also show that the proposed metasurfaces can be easily combined to form composite devices with extended functionalities. The proposed controlling method has promising applications in developing low-loss, ultra-compact spatial terahertz modulation devices. (C) 2017 Chinese Laser Press

Polarization-independent all-silicon dielectric metasurfaces in the terahertz regime

KAUST Repository

Zhang, Huifang; Zhang, Xueqian; Xu, Quan; Wang, Qiu; Xu, Yuehong; Wei, Minggui; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Ouyang, Chunmei; Zhang, Xixiang; Hu, Cong; Han, Jiaguang; Zhang, Weili

2017-01-01

Dielectric metasurfaces have achieved great success in realizing high-efficiency wavefront control in the optical and infrared ranges. Here, we experimentally demonstrate several efficient, polarization-independent, all-silicon dielectric metasurfaces in the terahertz regime. The metasurfaces are composed of cylindrical silicon pillars on a silicon substrate, which can be easily fabricated using etching technology for semiconductors. By locally tailoring the diameter of the pillars, full control over abrupt phase changes can be achieved. To show the controlling ability of the metasurfaces, an anomalous deflector, three Bessel beam generators, and three vortex beam generators are fabricated and characterized. We also show that the proposed metasurfaces can be easily combined to form composite devices with extended functionalities. The proposed controlling method has promising applications in developing low-loss, ultra-compact spatial terahertz modulation devices. (C) 2017 Chinese Laser Press

Modeling 3D PCMI using the Extended Finite Element Method with higher order elements

Energy Technology Data Exchange (ETDEWEB)

Jiang, W. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Spencer, Benjamin W. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2017-03-31

This report documents the recent development to enable XFEM to work with higher order elements. It also demonstrates the application of higher order (quadratic) elements to both 2D and 3D models of PCMI problems, where discrete fractures in the fuel are represented using XFEM. The modeling results demonstrate the ability of the higher order XFEM to accurately capture the effects of a crack on the response in the vicinity of the intersecting surfaces of cracked fuel and cladding, as well as represent smooth responses in the regions away from the crack.

FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.

Science.gov (United States)

Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P

2010-09-27

A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.

Optical characterization of luminescent silicon nanocrystals embedded in glass matrices

Energy Technology Data Exchange (ETDEWEB)

Debieu, Olivier

2008-12-16

Interstellar dust in nebulae and in the Diffuse Interstellar Medium (DISM) of galaxies contains a component which exhibits efficient visible-near infrared luminescence ranging from 500 to 1000 nm, known as Extended Red Emission (ERE). Silicon nanocrystals (nc-Si) are discussed as possible carriers of the ERE. We employed the accelerator facilities of the Institute of Solid State Physics of the University of Jena to implant Si ions into fused silica windows. An excess concentration of silicon atoms is thus produced in the host SiO{sub 2} matrix which, by applying an annealing at 1100 C, condensates to silicon nanoparticles and crystallizes. Although the condensation and crystallization occur after an annealing of one minute,10, 15 the samples were annealed during one hour in order to well-passivate the nc-Si, that means, to reduce effectively the number of Si-dangling bonds at the nc-Si surface that are efficient non-radiative recombination centers. 10, 16 Upon excitation with UV light, most of our nc-Si/SiO{sub 2} samples revealed strong PL. We implanted into our luminescent nc-Si/SiO{sub 2} systems other atomic elements, as for instance magnesium and calcium, which form silicates if their oxide is combined with SiO{sub 2}. The purpose is to simulate the conditions for silicates containing nc-Si. In order to understand the effect of the incorporation of foreign atoms on the PL properties of our nc-Si/SiO{sub 2} systems, we proceeded to similar experiments with Er and Ge. As has been demonstrated by several authors, 17, 18 the presence of nc-Si in a glass matrix enhances considerably the emission of Er{sup 3+} ions at 1.536{mu}m. At the same time, the PL of nc-Si is considerably quenched. Since the solubility of Er in crystalline silicon is about 2 orders of magnitude lower than in SiO{sub 2}, the optically active Er{sup 3+} ions are believed to be localized outside the nc-Si core, demonstrating that ions present in the host SiO{sub 2} matrix influence the PL

Dielectric, ferroelectric, and thermodynamic properties of silicone oil modified PVDF films for energy storage application

Energy Technology Data Exchange (ETDEWEB)

Luo, Bingcheng; Wang, Xiaohui, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn; Li, Longtu, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Sun, Hui [Aero-Engine Control System Institute, Aviation Industry Corporation of China, Jiangsu, Wuxi 214063 (China)

2016-06-13

Silicone oil modified poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) films were fabricated by the blending, casting, and hot-molding methods. The dielectric constant was increased for the 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films, while the dielectric loss for all blend films are decreased. D-E loops of 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films become slimmer than the pristine P(VDF-HFP) films. The maximum discharged energy density of 10.3 J/cm{sup 3} was obtained in 7.4 wt. % silicone oil modified P(VDF-HFP) films at the external electric field of 398 kV/mm. The Gibbs energy, miscibility, and phase behavior of binary mixture of P(VDF-HFP) silicone oil were investigated using molecular simulations and the extended Flory–Huggins model revealing favorable interactions and compatibility between P(VDF-HFP) and silicone oil.

Depth profiling of extended defects in silicon by Rutherford backscattering measurements

International Nuclear Information System (INIS)

Gruska, B.; Goetz, G.

1981-01-01

Depth profiling of dislocations and stacking faults is carried out by analyzing axial and planar channeling data from As + -and P + -implanted silicon samples annealed at high temperatures. The analyzing procedure is based on the simple two-beam model. The results show that depth profiling of dislocations using planar channeling data is connected with a broadening of the real distributions. A degradation of the defect concentration and a deformation of the profile result for very high defect concentrations (> 5 x 10 5 cm/cm 2 ). All these effects can be neglected by analyzing axial channeling data. Depth profiling of stacking faults is restricted to the determination of the depth distribution of displaced atomic rows or planes. For both the procedures, axial as well as planar channeling measurements, the same depth profiles of displaced atomic rows are obtained. (author)

Impact of rice cultivar and organ on elemental composition of phytoliths and the release of bio-available silicon

Directory of Open Access Journals (Sweden)

Zimin eLi

2014-10-01

Full Text Available The continental bio-cycling of silicon (Si plays a key role in global Si cycle and as such partly controls global carbon (C budget through nutrition of marine and terrestrial biota, accumulation of phytolith-occluded organic carbon (PhytOC and weathering of silicate minerals. Despite the key role of elemental composition of phytoliths on their solubility in soils, the impact of plant cultivar and organ on the elemental composition of phytoliths in Si high-accumulator plants, such as rice (Oryza sativa is not yet fully understood. Here we show that rice cultivar significantly impacts the elemental composition of phytoliths (Si, Al, Fe and C in different organs of the shoot system (grains, sheath, leaf and stem. The amount of occluded OC within phytoliths is affected by contents of Si, Al and Fe in plants, while independent of the element composition of phytoliths. Our data document, for different cultivars, higher bio-available Si release from phytoliths of leaves and sheaths, which are characterized by higher enrichment with Al and Fe (i.e., lower Si/Al and Si/Fe ratios, compared to grains and stems. We indicate that phytolith solubility in soils may be controlled by rice cultivar and type of organs. Our results highlight that the role of the morphology, the hydration rate and the chemical composition in the solubility of phytoliths and the kinetic release of Si in soil solution needs to be studied further. This is central to a better understanding of the impact of soil amendment with different plant organs and cultivars on soil OC stock and on the delivery of dissolved Si as we show that sheath and leaf rice organs are both characterized by higher content of OC occluded in phytolith and higher phytolith solubility compared to grains and stems. Our study shows the importance of studying the impact of the agro-management on the evolution of sinks and sources of Si and C in soils used for Si-high accumulator plants.

Trends in the use of silicone hydrogel contact lenses for daily wear.

Science.gov (United States)

Efron, Nathan; Morgan, Philip B

2008-10-01

Although the first silicone hydrogel contact lenses introduced onto the world contact lens market in 1999 held approval for both daily wear and extended wear use, the latter modality was promoted much more heavily by the manufacturers. The first silicone hydrogel lenses specifically promoted for daily wear were introduced in 2003. Data that we have gathered from annual contact lens fitting surveys demonstrate an immediate increase in market share whereby this lens type now represents more than one-third of soft lens fits in the United Kingdom. The success of this lens category is attributed to the health and safety benefits of silicone hydrogel materials and the positive impact of lens manufacturers by way of the effective marketing and distribution of these products.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

Science.gov (United States)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Hybrid integrated single-wavelength laser with silicon micro-ring reflector

Science.gov (United States)

Ren, Min; Pu, Jing; Krishnamurthy, Vivek; Xu, Zhengji; Lee, Chee-Wei; Li, Dongdong; Gonzaga, Leonard; Toh, Yeow T.; Tjiptoharsono, Febi; Wang, Qian

2018-02-01

A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic integration on silicon wafer for optical communication and optical sensing application.

Silicon quantum processor with robust long-distance qubit couplings

Energy Technology Data Exchange (ETDEWEB)

Tosi, Guilherme; Mohiyaddin, Fahd A.; Schmitt, Vivien; Tenberg, Stefanie; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2017-09-06

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.

Magnetic bead micromixer: Influence of magnetic element geometry and field amplitude

DEFF Research Database (Denmark)

Lund-Olesen, Torsten; Buus, Bjarke B.; Howalt, Jakob

2008-01-01

A scheme for the silicon microfabrication of lab-on-a-chip systems with mixing based on dynamic plugs of magnetic beads is presented. The systems consist of a microfluidic channel integrated with a number of soft magnetic elements by the sides of the channel. The elements are magnetized by a homo......A scheme for the silicon microfabrication of lab-on-a-chip systems with mixing based on dynamic plugs of magnetic beads is presented. The systems consist of a microfluidic channel integrated with a number of soft magnetic elements by the sides of the channel. The elements are magnetized...... by a homogeneous external ac magnetic field. The systems are scalable with respect to the number of magnetic bead plugs and number of parallel channels, and thus they have high potential for use in biological separation using functionalized magnetic beads. The mixing efficiency is characterized for two different...

Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

2014-03-17

We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

Analysis of the behavior of gold in silicon by neutron activation method

International Nuclear Information System (INIS)

Kohara, Rikusei

1977-01-01

Diffusion behavior and distribution of a trace of gold (10 16 Atoms/cm 3 level) in silicon have been investigated by neutron activation analysis and autoradiography. The diffusion coefficient of gold in silicon was expressed by the equation D(cm 2 /s)=5.6 exp (-49kcal/RT), which was approximately 10 5 times as much as that of phosphorus or boron. The solubility of gold in silicon at 1000 0 C and 1100 0 C was (1.9+-0.2)x10 16 and (6.7+-0.7)x10 16 Atoms/cm 3 , respectively. Two factors, in addition to temperature, were found to effect the concentration of gold in silicon. One is an enhanced gold solubility effect in the presence of such impurity elements as phosphorus or arsenic. Another is the similar effect induced by lattice defects in silicon crystals. A possible distribution model of gold in digital devices was proposed from these results. (auth.)

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

Integration of lateral porous silicon membranes into planar microfluidics.

Science.gov (United States)

Leïchlé, Thierry; Bourrier, David

2015-02-07

In this work, we present a novel fabrication process that enables the monolithic integration of lateral porous silicon membranes into single-layer planar microchannels. This fabrication technique relies on the patterning of local electrodes to guide pore formation horizontally within the membrane and on the use of silicon-on-insulator substrates to spatially localize porous silicon within the channel depth. The feasibility of our approach is studied by current flow analysis using the finite element method and supported by creating 10 μm long mesoporous membranes within 20 μm deep microchannels. The fabricated membranes are demonstrated to be potentially useful for dead-end microfiltration by adequately retaining 300 nm diameter beads while macromolecules such as single-stranded DNA and immunoglobulin G permeate the membrane. The experimentally determined fluidic resistance is in accordance with the theoretical value expected from the estimated pore size and porosity. The work presented here is expected to greatly simplify the integration of membranes capable of size exclusion based separation into fluidic devices and opens doors to the use of porous silicon in planar lab on a chip devices.

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

International Nuclear Information System (INIS)

Claverie, A.; Giles, L.F.; Omri, M.; Mauduit, B. de; Ben Assayag, G.; Mathiot, D.

1999-01-01

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are the reasons for some similarities and many differences in defect types and thermal evolution depending on whether boron is implanted in crystalline or amorphous silicon. While rising many more questions, we propose a 'thermodynamical' vision of the nucleation and growth of clusters and extended defects and stress the interactions between these defects and the free Si self-interstitial atoms which surround them and are the source for TED in all cases. A pragmatic approach to the simulation of TED for various experimental conditions is proposed

Nondestructive neutron activation analysis of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Vandergraaf, T. T.; Wikjord, A. G.

1973-10-15

Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)

Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

Energy Technology Data Exchange (ETDEWEB)

Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

2015-06-28

This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

Science.gov (United States)

Hwang, Jeongwoon; Ihm, Jisoon; Lee, Kwang-Ryeol; Kim, Seungchul

2015-01-01

We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV). As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries. PMID:28347087

Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Jeongwoon Hwang

2015-10-01

Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

Radiolabelled cellular blood elements

International Nuclear Information System (INIS)

Sinzinger, H.

1990-01-01

This book reports on radiolabelled cellular blood elements, covering new advances made during the past several years, in particular the use of Tc-99 as a tracer for blood elements. Coverage extends to several radiolabelled monoclonal antibodies that are specific for blood components and may label blood elements in vivo

Instrumental studies on silicone oil adsorption to the surface of intraocular lenses

Energy Technology Data Exchange (ETDEWEB)

Kim, Chun Ho [Lab. of Tissue Engineering, Korea Institute of Radiological and Medical Sciences, Seoul 139-706 (Korea, Republic of); Joo, Choun-Ki [Department of Ophthalmology and Visual Science, Medical College of Catholic University, Seoul 137-701 (Korea, Republic of); Chun, Heung Jae, E-mail: chunhj@catholic.ac.kr [Institute of Cell and Tissue Engineering, Medical College of Catholic University, Seoul 137-701 (Korea, Republic of); Yoo, Bok Ryul [Organosilicone Chemistry Laboratory, Korea Institute of Science and Technology, Seoul 130-650 (Korea, Republic of); Noh, Dong Il; Shim, Young Bock [Research Institute of Biomedical Engineering, Korea Bone Bank Co. Ltd., Seoul 153-782 (Korea, Republic of)

2012-12-01

Highlights: Black-Right-Pointing-Pointer It was found that PHEMA and Acrysof IOLs possess silicone oil repellant ability. Black-Right-Pointing-Pointer The residual silicone oil was detected on the surfaces of PMMA and silicone IOLs. Black-Right-Pointing-Pointer XPS studies showed that silicone oil coverage of PMMA lenses was 12%. Black-Right-Pointing-Pointer Silicone oil covered the entire surface of the silicone IOLs. - Abstract: The purpose of this study was to examine the degree of adherence of silicone oil to various intraocular lenses (IOLs) through comparison of the physico-chemical properties of the oil and IOLs. Four kinds of IOLs comprising various biomaterials were examined: PMMA (720A Trade-Mark-Sign ), PHEMA (IOGEL 1103 Trade-Mark-Sign ), Acrysof (MA60BM Trade-Mark-Sign ), and silicone (SI30NB Trade-Mark-Sign ). Each lens was immersed in silicone oil or carboxylated silicone (CS-PDMS) oil for 72 h. For determination of the changes in chemical and elemental compositions on the surfaces of IOLs caused by the contact with silicone oil, IOLs were washed and rinsed with n-pentane to remove as much of the adsorbed silicone oil as possible, then subjected to Fourier transform infrared spectroscopic (FTIR) and X-ray photoelectron spectroscopic (XPS) analyses. The results of FTIR studies strongly indicate that washing with n-pentane completely removed the adhered silicone oil on the surfaces of PHEMA and Acrysof IOLs, whereas the residual silicone oil was detected on the surfaces of PMMA and silicone IOLs. XPS studies showed that silicone oil coverage of PMMA lenses was 12%, even after washing with n-pentane. In the case of silicone IOLs, the relative O1s peak area of carboxyl group in the residual CS-PDMS oil was found to be {approx}2.7%. Considering that 2.8% carboxyl group-substituted silicone oil was used in the present study, CS-PDMS oil covered the entire surface of the silicone IOLs.

Electron transport in silicon nanowires having different cross-sections

Directory of Open Access Journals (Sweden)

Muscato Orazio

2016-06-01

Full Text Available Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

Kinetic parameters of silicon uptake by rice cultivars

Directory of Open Access Journals (Sweden)

Priscila Oliveira Martins

2012-02-01

Full Text Available Silicon is considered an important chemical element for rice, because it can improve tolerance to biotic and abiotic stress. However, in many situations no positive effect of silicon was observed, probably due to genetic factors. The objective of this research was to monitor Si uptake kinetics and identify responses of rice cultivars in terms of Si uptake capacity and use. The experiment was carried out in a greenhouse of the São Paulo State University (UNESP, Brazil. The experiment was arranged in a completely randomized, factorial design with three replications. that consisted of two rice cultivars and two Si levels. Kinetic parameters (Vmax, Km, and Cmin, root morphology variables, dry matter yield, Si accumulation and levels in shoots and roots, uptake efficiency, utilization efficiency, and root/shoot ratio were evaluated. Higher Si concentrations in the nutrient solution did not increase rice dry matter. The development of the low-affinity silicon uptake system of the rice cultivar 'Caiapó' was better than of 'Maravilha'.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Spectrum variability of the silicon Ap star HD 192913

International Nuclear Information System (INIS)

Riabchikova, T.A.; Davidova, E.S.; Adelman, S.J.

1990-01-01

The metal lines in the spectrum of the silicon Ap star HD 192913 are found to change with the photometric period. Many commonly found atomic species have lines which vary together in phase. The spectrum contains lines of most of the doubly ionized rare earth elements. 27 refs

Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Paul M., E-mail: paul.dietrich@yahoo.de [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Glamsch, Stephan [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Ehlert, Christopher [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany); Lippitz, Andreas [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Kulak, Nora [Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Unger, Wolfgang E.S. [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

2016-02-15

Graphical abstract: - Highlights: • A synchrotron-based XPS method to analyze ultra-thin silane films is presented. • Specification and quantification of organic next to inorganic silicon is demonstrated. • Non-destructive chemical depth profiles of the silane monolayers were obtained. - Abstract: The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z{sub 95} of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO{sub 2}/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.

Fabrication and Modification of Nanoporous Silicon Particles

Science.gov (United States)

Ferrari, Mauro; Liu, Xuewu

2010-01-01

Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

International Nuclear Information System (INIS)

Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

2012-01-01

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy.

Science.gov (United States)

Peng, Fei; Su, Yuanyuan; Zhong, Yiling; Fan, Chunhai; Lee, Shuit-Tong; He, Yao

2014-02-18

Silicon nanomaterials are an important class of nanomaterials with great potential for technologies including energy, catalysis, and biotechnology, because of their many unique properties, including biocompatibility, abundance, and unique electronic, optical, and mechanical properties, among others. Silicon nanomaterials are known to have little or no toxicity due to favorable biocompatibility of silicon, which is an important precondition for biological and biomedical applications. In addition, huge surface-to-volume ratios of silicon nanomaterials are responsible for their unique optical, mechanical, or electronic properties, which offer exciting opportunities for design of high-performance silicon-based functional nanoprobes, nanosensors, and nanoagents for biological analysis and detection and disease treatment. Moreover, silicon is the second most abundant element (after oxygen) on earth, providing plentiful and inexpensive resources for large-scale and low-cost preparation of silicon nanomaterials for practical applications. Because of these attractive traits, and in parallel with a growing interest in their design and synthesis, silicon nanomaterials are extensively investigated for wide-ranging applications, including energy, catalysis, optoelectronics, and biology. Among them, bioapplications of silicon nanomaterials are of particular interest. In the past decade, scientists have made an extensive effort to construct a silicon nanomaterials platform for various biological and biomedical applications, such as biosensors, bioimaging, and cancer treatment, as new and powerful tools for disease diagnosis and therapy. Nonetheless, there are few review articles covering these important and promising achievements to promote the awareness of development of silicon nanobiotechnology. In this Account, we summarize recent representative works to highlight the recent developments of silicon functional nanomaterials for a new, powerful platform for biological and

Material synthesis for silicon integrated-circuit applications using ion implantation

Science.gov (United States)

Lu, Xiang

As devices scale down into deep sub-microns, the investment cost and complexity to develop more sophisticated device technologies have increased substantially. There are some alternative potential technologies, such as silicon-on-insulator (SOI) and SiGe alloys, that can help sustain this staggering IC technology growth at a lower cost. Surface SiGe and SiGeC alloys with germanium peak composition up to 16 atomic percent are formed using high-dose ion implantation and subsequent solid phase epitaxial growth. RBS channeling spectra and cross-sectional TEM studies show that high quality SiGe and SiGeC crystals with 8 atomic percent germanium concentration are formed at the silicon surface. Extended defects are formed in SiGe and SiGeC with 16 atomic percent germanium concentration. X-ray diffraction experiments confirm that carbon reduces the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra and XTEM observations. Separation by plasma implantation of oxygen (SPIMOX) is an economical method for SOI wafer fabrication. This process employs plasma immersion ion implantation (PIII) for the implantation of oxygen ions. The implantation rate for Pm is considerably higher than that of conventional implantation. The feasibility of SPIMOX has been demonstrated with successful fabrication of SOI structures implementing this process. Secondary ion mass spectrometry (SIMS) analysis and cross-sectional transmission electron microscopy (XTEM) micrographs of the SPIMOX sample show continuous buried oxide under single crystal overlayer with sharp silicon/oxide interfaces. The operational phase space of implantation condition, oxygen dose and annealing requirement has been identified. Physical mechanisms of hydrogen induced silicon surface layer cleavage have been investigated using a combination of microscopy and hydrogen profiling techniques. The evolution of the silicon cleavage phenomenon is recorded by a series

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

Science.gov (United States)

Fiegl, G.

1979-01-01

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Progress in the medicinal chemistry of silicon: C/Si exchange and beyond.

Science.gov (United States)

Fujii, Shinya; Hashimoto, Yuichi

2017-04-01

Application of silyl functionalities is one of the most promising strategies among various 'elements chemistry' approaches for the development of novel and distinctive drug candidates. Replacement of one or more carbon atoms of various biologically active compounds with silicon (so-called sila-substitution) has been intensively studied for decades, and is often effective for alteration of activity profile and improvement of metabolic profile. In addition to simple C/Si exchange, several novel approaches for utilizing silicon in medicinal chemistry have been suggested in recent years, focusing on the intrinsic differences between silicon and carbon. Sila-substitution offers great potential for enlarging the chemical space of medicinal chemistry, and provides many options for structural development of drug candidates.

Porous silicon confers bioactivity to polycaprolactone composites in vitro.

Science.gov (United States)

Henstock, J R; Ruktanonchai, U R; Canham, L T; Anderson, S I

2014-04-01

Silicon is an essential element for healthy bone development and supplementation with its bioavailable form (silicic acid) leads to enhancement of osteogenesis both in vivo and in vitro. Porous silicon (pSi) is a novel material with emerging applications in opto-electronics and drug delivery which dissolves to yield silicic acid as the sole degradation product, allowing the specific importance of soluble silicates for biomaterials to be investigated in isolation without the elution of other ionic species. Using polycaprolactone as a bioresorbable carrier for porous silicon microparticles, we found that composites containing pSi yielded more than twice the amount of bioavailable silicic acid than composites containing the same mass of 45S5 Bioglass. When incubated in a simulated body fluid, the addition of pSi to polycaprolactone significantly increased the deposition of calcium phosphate. Interestingly, the apatites formed had a Ca:P ratio directly proportional to the silicic acid concentration, indicating that silicon-substituted hydroxyapatites were being spontaneously formed as a first order reaction. Primary human osteoblasts cultured on the surface of the composite exhibited peak alkaline phosphatase activity at day 14, with a proportional relationship between pSi content and both osteoblast proliferation and collagen production over 4 weeks. Culturing the composite with J744A.1 murine macrophages demonstrated that porous silicon does not elicit an immune response and may even inhibit it. Porous silicon may therefore be an important next generation biomaterial with unique properties for applications in orthopaedic tissue engineering.

Effects of silicon on the growth and genetic stability of passion fruit

Directory of Open Access Journals (Sweden)

Bárbara Nogueira Souza Costa

2016-09-01

Full Text Available The objective of this study was to determine the silicon concentration that would provide good growth in passion fruit plants. Passion fruit seeds were sown in polystyrene. After 60 days, when they were approximately 15 cm tall, the plants were transplanted into polyethylene pots containing 1.1 kg Tropstrato® substrate. Treatments consisted of four concentrations (0, 0.28, 0.55, and 0.83 g pot-1 of silicon applied as a silicic acid solution 1%. This solution was applied around the stem of the plants (drenched, with the first application being administered 15 days after transplanting. In total, three applications were made at intervals of 15 days. After the last application, the plants were subjected to chemical analysis to determine the silicon concentration and to X-ray microanalysis and flow cytometry. Phytotechnical analyses were performed during the applications. The use of silicon in concentrations of 0.28 and 0.55 g pot-1 provides better growth of the passion fruit, and the absorption and deposition of the silicon in the passion fruit leaves are proportional to the availability of this element in the plant. The roots of the passion fruit plant are silicon accumulators, and the DNA stability and amount are preserved in the silicon-treated passion fruit plants.

Radiation-induced evolution of austenite matrix in silicon-modified AISI 316 alloys

International Nuclear Information System (INIS)

Garner, F.A.; Brager, H.R.

1980-01-01

The microstructures of a series of silicon-modified AISI 316 alloys irradiated to fast neutron fluences of about 2-3 and 10 x 10 22 n/cm 2 (E > 0.1 MeV at temperatures ranging from 400 0 C to 600 0 C have been examined. The irradiation of AISI 316 leads to an extensive repartition of several elements, particularly nickel and silicon, between the matrix and various precipitate phases. The segregation of nickel at void and grain boundary surfaces at the expense of other faster-diffusing elements is a clear indication that one of the mechanisms driving the microchemical evolution is the Inverse Kirkendall effect. There is evidence that at one sink this mechanism is in competition with the solute drag process associated with interstitial gradients

On the electron density localization in elemental cubic ceramic and FCC transition metals by means of a localized electrons detector.

Science.gov (United States)

Aray, Yosslen; Paredes, Ricardo; Álvarez, Luis Javier; Martiz, Alejandro

2017-06-14

The electron density localization in insulator and semiconductor elemental cubic materials with diamond structure, carbon, silicon, germanium, and tin, and good metallic conductors with face centered cubic structure such as α-Co, Ni, Cu, Rh, Pd, Ag, Ir, Pt, and Au, was studied using a localized electrons detector defined in the local moment representation. Our results clearly show an opposite pattern of the electron density localization for the cubic ceramic and transition metal materials. It was found that, for the elemental ceramic materials, the zone of low electron localization is very small and is mainly localized on the atomic basin edges. On the contrary, for the transition metals, there are low-valued localized electrons detector isocontours defining a zone of highly delocalized electrons that extends throughout the material. We have found that the best conductors are those in which the electron density at this low-value zone is the lowest.

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

International Nuclear Information System (INIS)

Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

2013-01-01

Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

Fabrication technology of spherical fuel element for HTR-10

International Nuclear Information System (INIS)

He Jun; Zou Yanwen; Liang Tongxiang; Qiu Xueliang

2002-01-01

R and D on the fabrication technology of the spherical fuel elements for the 10 MW HTR Test Module (HTR-10) began from 1986. Cold quasi-isostatic molding with a silicon rubber die is used for manufacturing the spherical fuel elements.The fabrication technology and the graphite matrix materials were investigated and optimized. Twenty five batches of fuel elements, about 11000 of the fuel elements, have been produced. The cold properties of the graphite matrix materials satisfied the design specifications. The mean free uranium fraction of 25 batches was 5 x 10 -5

Chemomechanical nanolithography: nanografting on silicon and factors impacting linewidth.

Science.gov (United States)

Lee, Michael V; Hoffman, Melinda Tonks; Barnett, Katherine; Geiss, John-Mark; Smentkowski, Vincent S; Linford, Matthew R; Davis, Robert C

2006-06-01

We present a two-fold extension of previous work on Atomic Force Microscope-based chemomechanical functionalization: (1) chemomechanical nanografting, which extends chemomechanical functionalization to a more stable initial surface, and (2) linewidth studies that show the impact of force and Atomic Force Microscope probe tip wear on patterning resolution. Alkene, alcohol, and alkyl halide molecules were nanografted to silicon and imaged with in situ atomic force microscopy, time-of-flight secondary ion mass spectrometry with Automated eXpert Spectrum Image Analysis, and scanning electron microscopy. Chemomechanical nanografting demonstrated linewidths down to 50 nm. Lines written on hydrogen-terminated silicon were used to explore the impact of tip radius and tip wear on linewidth when using Si3N4 coated tips.

Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors

CERN Document Server

Martínez, C; Lozano, M; Campabadal, F; Santander, J; Fonseca, L; Ullán, M; Moreno, A

2002-01-01

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).

Effects of alloying elements on nodular and uniform corrosion resistance of zirconium-based alloys

International Nuclear Information System (INIS)

Abe, Katsuhiro

1992-01-01

The effects of alloying and impurity elements (tin, iron, chromium, nickel, niobium, tantalum, oxygen, aluminum, carbon, nitrogen, silicon, and phosphorus) on the nodular and uniform corrosion resistance of zirconium-based alloys were studied. The improving effect of iron, nickel and niobium in nodular corrosion resistance were observed. The uniform corrosion resistance was also improved by nickel, niobium and tantalum. The effects of impurity elements, nitrogen, aluminum and phosphorus were negligibly small but increasing the silicon content seemed to improve slightly the uniform corrosion resistance. Hydrogen pick-up fraction were not changed by alloying and impurity elements except nickel. Nickel addition increased remarkably hydrogen pick-up fraction. Although the composition of secondary precipitates changed with contents of alloying elements, the correlation of composition of secondary precipitates to corrosion resistance was not observed. (author)

Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

International Nuclear Information System (INIS)

Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

2016-01-01

Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

Report on 1981 research result on the R and D of environmental resistance reinforcing element; 1981 nendo taikankyo kyoka soshi no kenkyuu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

This research was intended to establish technology for the substrate of an environmental resistance reinforcing element in which environmental resistance was enhanced against radiation, heat, mechanical shock, etc., for the purpose of realizing various kinds of equipment and devices for performing advanced information processing under severe environmental conditions of outer space, nuclear reactors, travelling objects such as automobiles and aircrafts, and plants. A grasp of the present point at issue and the examination of improving methods were conducted primarily on a ceramic package, for the purpose of R and D of the technology of a MOS type silicon integrated circuit element; further, in the evaluation test technology, the problems of the status quo were grasped through the understanding of the data of the existing elements. In the technology for a bipolar type silicon integrated circuit element. change in the properties by irradiation of radioactive rays was grasped on oxidized silicon and silicon substrate crystals as the technology for the element. In the R and D of the technology for a compound semiconductor integrated circuit element, the point at issue of the present technology grasped, with the improving method examined, primarily on the tri-plate structure of ceramics. (NEDO)

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Directory of Open Access Journals (Sweden)

Zahra Ostadmahmoodi Do

2016-06-01

Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

Science.gov (United States)

Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

2015-08-14

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Finite element study of a lumbar intervertebral disc nucleus replacement device

Directory of Open Access Journals (Sweden)

Jessica S Coogan

2016-12-01

Full Text Available Nucleus replacement technologies are a minimally invasive alternative to spinal fusion and total disc replacement that have the potential to reduce pain and restore motion for patients with degenerative disc disease. Finite element modeling can be used to determine the biomechanics associated with nucleus replacement technologies. The current study focuses on a new nucleus replacement device designed as a conforming silicone implant with an internal void. A validated finite element model of the human lumbar L3-L4 motion segment was developed and used to investigate the influence of the nucleus replacement device on spine biomechanics. In addition, the effect of device design changes on biomechanics was determined. A 3D, L3-L4 finite element model was constructed from medical imaging data. Models were created with the normal intact nucleus, the nucleus replacement device, and a solid silicone implant. Probabilistic analysis was performed on the normal model to provide quantitative validation metrics. Sensitivity analysis was performed on the silicone Shore A durometer of the device. Models were loaded under axial compression followed by flexion/extension, lateral bending, or axial rotation. Compressive displacement, endplate stresses, reaction moment, and annulus stresses were determined and compared between the different models. The novel nucleus replacement device resulted in similar compressive displacement, endplate stress, and annulus stress and slightly higher reaction moment compared with the normal nucleus. The solid implant resulted in decreased displacement, increased endplate stress, decreased annulus stress, and decreased reaction moment compared with the novel device. With increasing silicone durometer, compressive displacement decreased, endplate stress increased, reaction moment increased, and annulus stress decreased. Finite element analysis was used to show that the novel nucleus replacement device results in similar biomechanics

Development of Solar Grade (SoG) Silicon

Energy Technology Data Exchange (ETDEWEB)

Joyce, David B; Schmid, Frederick

2008-01-18

The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

Silicon: Child and Progenitor of Revolution

Science.gov (United States)

Cahn, R. W.

Antoine Lavoisier, the pioneering French chemist who (together with Joseph Priestley in England) identified oxygen as an element and gave it its name, in 1789 concluded that quartz was probably a compound with an as-yet undiscovered but presumably extremely common element. That was also the year in which the French Revolution broke out. Five years later, the Jacobins accused Lavoisier of offences against the people and cut off his head, thereby nearly cutting off the new chemistry. It was not until 1824 that Jöns Berzelius in Sweden succeeded in confirming Lavoisier's speculation by isolating silicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Biorefining of wheat straw: accounting for the distribution of mineral elements in pretreated biomass by an extended pretreatment-severity equation.

Science.gov (United States)

Le, Duy Michael; Sørensen, Hanne R; Knudsen, Niels Ole; Schjoerring, Jan K; Meyer, Anne S

2014-01-01

Mineral elements present in lignocellulosic biomass feedstocks may accumulate in biorefinery process streams and cause technological problems, or alternatively can be reaped for value addition. A better understanding of the distribution of minerals in biomass in response to pretreatment factors is therefore important in relation to development of new biorefinery processes. The objective of the present study was to examine the levels of mineral elements in pretreated wheat straw in response to systematic variations in the hydrothermal pretreatment parameters (pH, temperature, and treatment time), and to assess whether it is possible to model mineral levels in the pretreated fiber fraction. Principal component analysis of the wheat straw biomass constituents, including mineral elements, showed that the recovered levels of wheat straw constituents after different hydrothermal pretreatments could be divided into two groups: 1) Phosphorus, magnesium, potassium, manganese, zinc, and calcium correlated with xylose and arabinose (that is, hemicellulose), and levels of these constituents present in the fiber fraction after pretreatment varied depending on the pretreatment-severity; and 2) Silicon, iron, copper, aluminum correlated with lignin and cellulose levels, but the levels of these constituents showed no severity-dependent trends. For the first group, an expanded pretreatment-severity equation, containing a specific factor for each constituent, accounting for variability due to pretreatment pH, was developed. Using this equation, the mineral levels could be predicted with R(2) > 0.75; for some with R(2) up to 0.96. Pretreatment conditions, especially pH, significantly influenced the levels of phosphorus, magnesium, potassium, manganese, zinc, and calcium in the resulting fiber fractions. A new expanded pretreatment-severity equation is proposed to model and predict mineral composition in pretreated wheat straw biomass.

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC

International Nuclear Information System (INIS)

Guedon, M.

2005-05-01

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

CERN Document Server

Martínez, C; Lozano, M; Campabadal, F; Santander, J; Fonseca, L; Ullán, M; Moreno, A J D

2002-01-01

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Reception Test of Petals for the End Cap TEC+ of the CMS Silicon Strip Tracker

CERN Document Server

Bremer, R; Klein, Katja; Schmitz, Stefan Antonius; Adler, Volker; Adolphi, Roman; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

2009-01-01

The silicon strip tracker of the CMS experiment has been completed and was inserted into the CMS detector in late 2007. The largest sub system of the tracker are its end caps, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted onto the TEC support structures. Each end cap consists of 144 such petals, which were built and fully qualified by several institutes across Europe. From

SILICON AND OXYGEN ABUNDANCES IN PLANET-HOST STARS

International Nuclear Information System (INIS)

Brugamyer, Erik; Dodson-Robinson, Sarah E.; Cochran, William D.; Sneden, Christopher

2011-01-01

The positive correlation between planet detection rate and host star iron abundance lends strong support to the core accretion theory of planet formation. However, iron is not the most significant mass contributor to the cores of giant planets. Since giant planet cores are thought to grow from silicate grains with icy mantles, the likelihood of gas giant formation should depend heavily on the oxygen and silicon abundance of the planet formation environment. Here we compare the silicon and oxygen abundances of a set of 76 planet hosts and a control sample of 80 metal-rich stars without any known giant planets. Our new, independent analysis was conducted using high resolution, high signal-to-noise data obtained at McDonald Observatory. Because we do not wish to simply reproduce the known planet-metallicity correlation, we have devised a statistical method for matching the underlying [Fe/H] distributions of our two sets of stars. We find a 99% probability that planet detection rate depends on the silicon abundance of the host star, over and above the observed planet-metallicity correlation. We do not detect any such correlation for oxygen. Our results would thus seem to suggest that grain nucleation, rather than subsequent icy mantle growth, is the important limiting factor in forming giant planets via core accretion. Based on our results and interpretation, we predict that planet detection should correlate with host star abundance for refractory elements responsible for grain nucleation and that no such trends should exist for the most abundant volatile elements responsible for icy mantle growth.

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Science.gov (United States)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

Science.gov (United States)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

Science.gov (United States)

Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

2005-01-01

Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

A novel high pressure, high temperature vessel used to conduct long-term stability measurements of silicon MEMS pressure transducers

Science.gov (United States)

Wisniewiski, David

2014-03-01

The need to quantify and to improve long-term stability of pressure transducers is a persistent requirement from the aerospace sector. Specifically, the incorporation of real-time pressure monitoring in aircraft landing gear, as exemplified in Tire Pressure Monitoring Systems (TPMS), has placed greater demand on the pressure transducer for improved performance and increased reliability which is manifested in low lifecycle cost and minimal maintenance downtime through fuel savings and increased life of the tire. Piezoresistive (PR) silicon MEMS pressure transducers are the primary choice as a transduction method for this measurement owing to their ability to be designed for the harsh environment seen in aircraft landing gear. However, these pressure transducers are only as valuable as the long-term stability they possess to ensure reliable, real-time monitoring over tens of years. The "heart" of the pressure transducer is the silicon MEMS element, and it is at this basic level where the long-term stability is established and needs to be quantified. A novel High Pressure, High Temperature (HPHT) vessel has been designed and constructed to facilitate this critical measurement of the silicon MEMS element directly through a process of mechanically "floating" the silicon MEMS element while being subjected to the extreme environments of pressure and temperature, simultaneously. Furthermore, the HPHT vessel is scalable to permit up to fifty specimens to be tested at one time to provide a statistically significant data population on which to draw reasonable conclusions on long-term stability. With the knowledge gained on the silicon MEMS element, higher level assembly to the pressure transducer envelope package can also be quantified as to the build-effects contribution to long-term stability in the same HPHT vessel due to its accommodating size. Accordingly, a HPHT vessel offering multiple levels of configurability and robustness in data measurement is presented, along

Neutron activation analysis of low-level element contents in silicon wafers

Energy Technology Data Exchange (ETDEWEB)

Goerner, W [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Berger, A [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Niese, S [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Koehler, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Matthes, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Gawlik, D [Hahn-Meitner-Institut, Berlin (Germany)

1997-03-01

Semiconductor silicon is among the purest materials having ever been produced by modern technology. Thus, it is quite suitable as a primary reference material validating the correctness and the detection capabilities of developed analytical methods. Among them neutron activation analysis plays a competitive role. The U.S. National Institute of Science and Technology (NIST) has initiated and carried out an interlaboratory comparison in order to study the spread of analytical results worldwide evolved by several laboratories dealing with specimens of extreme purity. The outcome of the experiment was intended to review the capabilities of NAA as well as to differentiate between bulk and surface contamination. (orig./DG)

Cultivar variation in silicon accumulation and distribution in Petunia ×hybrida

Science.gov (United States)

Silicon (Si) is a plant-beneficial element that can alleviate the effects of abiotic and biotic stress. Plants are typically classified as Si accumulators or non-accumulators based on foliar Si concentrations (= 1% Si on a dry weight basis for accumulators). Based on this definition, most greenhou...

Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

Science.gov (United States)

Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

2017-10-01

The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction

Directory of Open Access Journals (Sweden)

Druzhinin A. A.

2017-12-01

Full Text Available Sensitive element of multifunctional sensor for measuring temperature, strain and magnetic field induction has been developed based on the studies of electrical conductivity and magnetoresistance of silicon and germanium microcrystals in the temperature range 4.2—70 K, strain ±1.5*10–3 rel.un. and magnetic fields of 0—14 T. The feature of the sensitive element is the using of the p- and n-type conductivity germanium microcrystals as mechanical and magnetic field sensors, respectively, and the p-type silicon microcrystal — as temperature sensor. That allows providing the compensation of temperature influence on piezoresistance and on sensitivity to the magnetic field.

A new discrete Kirchhoff-Mindlin element based on Mindlin-Reissner plate theory and assumed shear strain fields. I - An extended DKT element for thick-plate bending analysis. II - An extended DKQ element for thick-plate bending analysis

Science.gov (United States)

Katili, Irwan

1993-06-01

A new three-node nine-degree-of-freedom triangular plate bending element is proposed which is valid for the analysis of both thick and thin plates. The element, called the discrete Kirchhoff-Mindlin triangle (DKMT), has a proper rank, passes the patch test for thin and thick plates in an arbitrary mesh, and is free of shear locking. As an extension of the DKMT element, a four-node element with 3 degrees of freedom per node is developed. The element, referred to as DKMQ (discrete Kirchhoff-Mindlin quadrilateral) is found to provide good results for both thin and thick plates without any compatibility problems.

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

Energy Technology Data Exchange (ETDEWEB)

Orlov, V. I.; Feklisova, O. V.; Yakimov, E. B., E-mail: yakimov@iptm.ru [Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)

2015-06-15

The results of comparative experimental studies of one- and two-dimensional defects in plastically deformed silicon by the electron-beam-induced current (EBIC) and light-beam-induced current (LBIC) techniques are reported. It is shown that the contrast of two-dimensional defects (dislocation trails) in the LBIC method can by much more pronounced than that in the EBIC technique, which is in good agreement with the results of calculations. The higher sensitivity of the LBIC technique is mainly due to deeper penetration of the optical beam into the material in comparison to the penetration of the electron beam of a scanning electron microscope.

Guided ultrasonic wave beam skew in silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Analysis of Thermo-Elastic Fracture Problem during Aluminium Alloy MIG Welding Using the Extended Finite Element Method

Directory of Open Access Journals (Sweden)

Kuanfang He

2017-01-01

Full Text Available The thermo-elastic fracture problem and equations are established for aluminium alloy Metal Inert Gas (MIG welding, which include a moving heat source and a thermoelasticity equation with the initial and boundary conditions for a plate structure with a crack. The extended finite element method (XFEM is implemented to solve the thermo-elastic fracture problem of a plate structure with a crack under the effect of a moving heat source. The combination of the experimental measurement and simulation of the welding temperature field is done to verify the model and solution method. The numerical cases of the thermomechanical parameters and stress intensity factors (SIFs of the plate structure in the welding heating and cooling processes are investigated. The research results provide reference data and an approach for the analysis of the thermomechanical characteristics of the welding process.

Application of hydrogel-coated microcantilevers as sensing elements for pH

International Nuclear Information System (INIS)

Gonska, Julian; Schelling, Christoph; Urban, Gerald

2009-01-01

This note reports on cantilever-based sensor elements coated with a hydrogel. The hydrogel responds with a volume change on varying the pH value of surrounding liquids. The change in volume leads to a static deflection of the cantilevers, which is detected using integrated piezoresistors. To increase deflection sensitivity of the sensor elements, sub-micron, multilayered cantilevers consisting of polycrystalline silicon and silicon oxide are used. A new cantilever design is developed, which decreases the cantilever sensitivity to in situ stresses and thermal bimorph effects. A theoretical model for the sensor elements is introduced providing the output signal of multiple cantilevers connected in a full Wheatstone bridge. Measurements of deflection sensitivity prove the theoretical model. Finally, the cantilevers are coated with a 2-hydroxyethyl methacrylate and 2-(dimethylamino) ethyl methacrylate copolymer-based hydrogel, and changes in the pH value from pH 4 to pH 10 are measured. (technical note)

Silicon Detector System for High Rate EXAFS Applications.

Science.gov (United States)

Pullia, A; Kraner, H W; Siddons, D P; Furenlid, L R; Bertuccio, G

1995-08-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Micro-discharge noise and radiation damage of silicon microstrip sensors

International Nuclear Information System (INIS)

Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

1996-01-01

We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M; The ATLAS collaboration

2010-01-01

To extend the physics potential of the Large Hadron Colider (LHC) at CERN, upgrades of the accelerator complex and the detectors towards the Super-LHC (sLHC) are foreseen. The upgrades, separated in Phase-1 and Phase-2, aim at increasing the luminosity while leaving the energy of the colliding particles (7 TeV per proton beam) unchanged. After the Phase-2 upgrade the instantaneous luminosity will be a factor of 5-10 higher than the design luminosity of the LHC. Due to the increased track rate and extreme radiation levels for the tracking detectors, upgrades of the detectors are necessary. At ATLAS, one of the two general purpose detectors at the LHC, the current inner detector will be replaced by an all-silicon tracker. This article describes the plans for the Phase-2 upgrade of the silicon strip detector of ATLAS. Radiation hard n-in-p silicon detectors with shorter strips than currently installed in ATLAS are planned. Results of measurements with these sensors and plans for module designs will be discussed.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Ultra-short silicon MMI duplexer

Science.gov (United States)

Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

2012-11-01

The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

Synthesis of silicon nanocomposite for printable photovoltaic devices on flexible substrate

Science.gov (United States)

Odo, E. A.; Faremi, A. A.

2017-06-01

Renewed interest has been established in the preparation of silicon nanoparticles for electronic device applications. In this work, we report on the production of silicon powders using a simple ball mill and of silicon nanocomposite ink for screen-printable photovoltaic device on a flexible substrate. Bulk single crystalline silicon was milled for 25 h in the ball mill. The structural properties of the produced silicon nanoparticles were investigated using X-ray diffraction (XRD) and transmission electron microscopy. The results show that the particles remained highly crystalline, though transformed from their original single crystalline state to polycrystalline. The elemental composition using energy dispersive X-ray florescence spectroscopy (EDXRF) revealed that contamination from iron (Fe) and chromium (Cr) of the milling media and oxygen from the atmosphere were insignificant. The size distribution of the nanoparticles follows a lognormal pattern that ranges from 60 nm to about 1.2 μm and a mean particle size of about 103 nm. Electrical characterization of screen-printed PN structures of the nanocomposite formed by embedding the powder into a suitable water-soluble polymer on Kapton sheet reveals an enhanced photocurrent transport resulting from photo-induced carrier generation in the depletion region with energy greater that the Schottky barrier height at the metal-composite interface.

Effect of iron and silicon in aluminium and its alloys

International Nuclear Information System (INIS)

Kovacs, I.

1990-01-01

The iron and silicon are the main impurities in aluminium, they are always present in alloys made from commercially pure base material. The solid solubility of iron in aluminium is very low, therefore its largest amount forms intermetallic compounds the kind of which depends strongly on the other impurities of alloying elements. Although the solid solubility of silicon is much larger than that of the iron, it is the constituent of both the primary and the secondary particles, the structure of which depends in general on the iron-silicon concentration ratio. These Fe and Si containing particles can cause various and basic changes in the macroscopic properties of the alloy. Since commercially pure aluminium has extensive consumer and industrial use, it is very important to know, not only from scientific but also from practical point of view, the effect of iron and silicon on the physical and mechanical properties of aluminium and its alloys. The aim of the ''International Workshop on the Effect of Iron and Silicon in Aluminium and its Alloys'' was to clarify the present knowledge on this subject. The thirty papers presented at the Workshop and collected in this Proceedings cover many important fields of the subject. I hope that they will contribute to both the deeper understanding of the related phenomena and the improvement of technologies for producing better aluminium alloys

Stopping characteristics of boron and indium ions in silicon

Energy Technology Data Exchange (ETDEWEB)

Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A. [National Research Nuclear University MEPhI (Russian Federation)

2016-12-15

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

Superconducting Super Collider silicon tracking subsystem research and development

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Ziock, H.J.; Gamble, M.T.

1990-12-01

The Alamos National Laboratory Mechanical Engineering and Electronics Division has been investigating silicon-based elementary particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, materials, and thermal issues have been addressed. This paper explores detector structural integrity and stability, including detailed finite element models of the silicon wafer support and predictive methods used in designing with advanced composite materials. The current design comprises a magnesium metal matrix composite (MMC) truss space frame to provide a sparse support structure for the complex array of silicon detectors. This design satisfies the 25-μm structural stability requirement in a 10-Mrad radiation environment. This stability is achieved without exceeding the stringent particle interaction constraints set at 2.5% of a radiation length. Materials studies have considered thermal expansion, elastic modulus, resistance to radiation and chemicals, and manufacturability of numerous candidate materials. Based on optimization of these parameters, the MMC space frame will possess a coefficient of thermal expansion (CTE) near zero to avoid thermally induced distortions, whereas the cooling rings, which support the silicon detectors and heat pipe network, will probably be constructed of a graphite/epoxy composite whose CTE is engineered to match that of silicon. Results from radiation, chemical, and static loading tests are compared with analytical predictions and discussed. Electronic thermal loading and its efficient dissipation using heat pipe cooling technology are discussed. Calculations and preliminary designs for a sprayed-on graphite wick structure are presented. A hydrocarbon such as butane appears to be a superior choice of heat pipe working fluid based on cooling, handling, and safety criteria

Design of a charge sensitive preamplifier on high resistivity silicon

International Nuclear Information System (INIS)

Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

1987-01-01

A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

Ultraviolet downconverting phosphor for use with silicon CCD imagers

Science.gov (United States)

Blouke, M. M.; Cowens, M. W.; Hall, J. E.; Westphal, J. A.; Christensen, A. B.

1980-01-01

The properties and application of a UV downconverting phosphor (coronene) to silicon charge coupled devices are discussed. Measurements of the absorption spectrum have been extended to below 1000 A, and preliminary results indicate the existence of useful response to at least 584 A. The average conversion efficiency of coronene was measured to be approximately 20% at 2537 A. Imagery at 3650 A using a backside illuminated 800 x 800 CCD coated with coronene is presented.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Gamma Large Area Silicon Telescope (GLAST)

International Nuclear Information System (INIS)

Godfrey, G.L.

1993-11-01

The recent discoveries and excitement generated by EGRET have prompted an investigation into modern technologies ultimately leading to the next generation space-based gamma ray telescope. The goal is to design a detector that will increase the data acquisition rate by almost two orders of magnitude beyond EGRET, while at the same time improving on the angular resolution, the energy measurement of reconstructed gamma rays, and the triggering capability of the instrument. The GLAST proposal is based on the assertion that silicon particle detectors are the technology of choice for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggering. The GLAST detector is roughly modeled after EGRET in that a tracking module precedes a calorimeter. The GLAST Tracker has planes of thin radiatior interspersed with planes of crossed-strip (x,y) 300-μm-pitch silicon detectors to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm in track fitting resulting in an angular resolution of 0.1 degree at high energy (the low energy angular resolution at 100 MeV would be about 2 degree, limited by multiple scattering). A possible GLAST calorimeter is made of a mosaic of Csl crystals of order 10 r.l. in depth, with silicon photodiodes readout. The increased depth of the GLAST calorimeter over EGRET's extends the energy range to about 300 GeV

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

Directory of Open Access Journals (Sweden)

Mohan Muthusamy

2018-04-01

Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Level Set Approach to Anisotropic Wet Etching of Silicon

Directory of Open Access Journals (Sweden)

Branislav Radjenović

2010-05-01

Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

Science.gov (United States)

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Distribution of trace elements in a modified and grain refined aluminium-silicon hypoeutectic alloy.

Science.gov (United States)

Faraji, M; Katgerman, L

2010-08-01

The influence of modifier and grain refiner on the nucleation process of a commercial hypoeutectic Al-Si foundry alloy (A356) was investigated using optical microscopy, scanning electron microscopy (SEM) and electron probe microanalysis technique (EPMA). Filtering was used to improve the casting quality; however, it compromised the modification of silicon. Effect of filtering on strontium loss was also studied using the afore-mentioned techniques. EPMA was used to trace the modifying and grain refining agents inside matrix and eutectic Si. This was to help understanding mechanisms of nucleation and modification in this alloy. Using EPMA, the negative interaction of Sr and Al3TiB was closely examined. In modified structure, it was found that the maximum point of Sr concentration was in line with peak of silicon; however, in case of just 0.1wt% added Ti, the peak of Ti concentration was not in line with aluminium, (but it was close to Si peak). Furthermore, EPMA results showed that using filter during casting process lowered the strontium content, although produced a cleaner melt. (c) 2010 Elsevier Ltd. All rights reserved.

Extended mind and after: socially extended mind and actor-network.

Science.gov (United States)

Kono, Tetsuya

2014-03-01

The concept of extended mind has been impressively developed over the last 10 years by many philosophers and cognitive scientists. The extended mind thesis (EM) affirms that the mind is not simply ensconced inside the head, but extends to the whole system of brain-body-environment. Recently, some philosophers and psychologists try to adapt the idea of EM to the domain of social cognition research. Mind is socially extended (SEM). However, EM/SEM theory has problems to analyze the interactions among a subject and its surroundings with opposition, antagonism, or conflict; it also tends to think that the environment surrounding the subject is passive or static, and to neglect the power of non-human actants to direct and regulate the human subject. In these points, actor-network theory (ANT) proposed by Latour and Callon is more persuasive, while sharing some important ideas with EM/SEM theory. Actor-network is a hybrid community which is composed of a series of heterogeneous elements, animate and inanimate for a certain period of time. I shall conclude that EM/SEM could be best analyzed as a special case of actor-network. EM/SEM is a system which can be controlled by a human agent alone. In order to understand collective behavior, philosophy and psychology have to study the actor-network in which human individuals are situated.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

A new TXRF vacuum chamber with sample changer for chemical analysis using silicon drift chamber detector

International Nuclear Information System (INIS)

Streli, C.; Wobrauschek, P.; Zoeger, N.; Pepponi, G.

2003-01-01

Full text: Several TXRF spectrometers for chemical analysis as well as for wafer surface analysis are commercially available. But there is no one available for chemical analysis offering the possibility to measure the samples in vacuum conditions. Vacuum of 10 -2 mbar in the sample environment helps to reduce the background due to scattering from air, thus to improve the detection limits as well as to reduce the absorption of low energy fluorescence radiation from low Z elements and extend the elemental range to be measured and removes the Ar lines from the spectrum. The x-ray group of the Atominstitut designed and fabricated a new vacuum chamber for TXRF equipped with a 12 position sample changer from Italstructures, Riva, Italy. The detector used was a 10 mm 2 silicon drift detector (KETEK, Munich, Germany), offering the advantage of electrically cooling, so no LN2 is required. The chamber was designed to be attached to a diffraction tube housing, e.g. with a fine focus Mo-x-ray tube and uses a multilayer monochromator. Spectra are stored by a small AMTEK MCA and control between sample changer and MCA communication is done by a modified AMPTEK software. The performance is expressed in detection limits of 1 pg Rb for Mo Ka excitation with 50 kV, 40 mA excitation conditions, 1000 s lifetime, obtained from a sample containing 600 pg Rb as single element standard. Details on performance, reproducibility and light element excitation and detection are presented. (author)

Study of the properties of silicon-based semiconductor converters for betavoltaic cells

International Nuclear Information System (INIS)

Polikarpov, M. A.; Yakimov, E. B.

2015-01-01

Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni 63 source with an activity of 10 mCi/cm 2 . The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm 2 even for a cell with an area of one centimeter, which is rather close to the calculated value

Assessing neutron generator output using neutron activation of silicon

International Nuclear Information System (INIS)

Kehayias, Pauli M.; Kehayias, Joseph J.

2007-01-01

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the 28 Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10 3 n/s/cm 2 ± 5%, which is consistent with the manufacturer's specifications

Assessing neutron generator output using neutron activation of silicon

Energy Technology Data Exchange (ETDEWEB)

Kehayias, Pauli M. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States); Kehayias, Joseph J. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States)]. E-mail: joseph.kehayias@tufts.edu

2007-08-15

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the {sup 28}Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10{sup 3} n/s/cm{sup 2} {+-} 5%, which is consistent with the manufacturer's specifications.

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

Science.gov (United States)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

High Power Broadband Multispectral Source on a Hybrid Silicon Chip

Science.gov (United States)

2017-03-14

optical bandwidth of the erbium-doped- fiber -amplifier with densely-spaced frequency channels. To extend the spectral capacity of the Si-on-insulator...associated with non-uniform undercut at the taper tip across the chip after wet etching the active region. Figure 14. Normalized optical emission...Hutchinson, J., Shin, J.-H., Fish, G., and Fang, A., “Integrated silicon photonic laser sources for telecom and datacom,” in [National Fiber Optic

Surface Coating of Gypsum-Based Molds for Maxillofacial Prosthetic Silicone Elastomeric Material: The Surface Topography.

Science.gov (United States)

Khalaf, Salah; Ariffin, Zaihan; Husein, Adam; Reza, Fazal

2015-07-01

This study aimed to compare the surface roughness of maxillofacial silicone elastomers fabricated in noncoated and coated gypsum materials. This study was also conducted to characterize the silicone elastomer specimens after surfaces were modified. A gypsum mold was coated with clear acrylic spray. The coated mold was then used to produce modified silicone experimental specimens (n = 35). The surface roughness of the modified silicone elastomers was compared with that of the control specimens, which were prepared by conventional flasking methods (n = 35). An atomic force microscope (AFM) was used for surface roughness measurement of silicone elastomer (unmodified and modified), and a scanning electron microscope (SEM) was used to evaluate the topographic conditions of coated and noncoated gypsum and silicone elastomer specimens (unmodified and modified) groups. After the gypsum molds were characterized, the fabricated silicone elastomers molded on noncoated and coated gypsum materials were evaluated further. Energy-dispersive X-ray spectroscopy (EDX) analysis of gypsum materials (noncoated and coated) and silicone elastomer specimens (unmodified and modified) was performed to evaluate the elemental changes after coating was conducted. Independent t test was used to analyze the differences in the surface roughness of unmodified and modified silicone at a significance level of p SEM analysis results showed evident differences in surface smoothness. EDX data further revealed the presence of the desired chemical components on the surface layer of unmodified and modified silicone elastomers. Silicone elastomers with lower surface roughness of maxillofacial prostheses can be obtained simply by coating a gypsum mold. © 2014 by the American College of Prosthodontists.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Locking of electron spin coherence above 20 ms in natural silicon carbide

Science.gov (United States)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

Iron oxide shell coating on nano silicon prepared from the sand for lithium-ion battery application

Science.gov (United States)

Furquan, Mohammad; Vijayalakshmi, S.; Mitra, Sagar

2018-05-01

Elemental silicon, due to its high specific capacity (4200 mAh g-1) and non-toxicity is expected to be an attractive anode material for Li-ion battery. But its huge expansion volume (> 300 %) during charging of battery, leads to pulverization and cracking in the silicon particles and causes sudden failure of the Li-ion battery. In this work, we have designed yolk-shell type morphology of silicon, prepared from carbon coated silicon nanoparticles soaked in aqueous solution of ferric nitrate and potassium hydroxide. The soaked silicon particles were dried and finally calcined at 800 °C for 30 minutes. The product obtained is deprived of carbon and has a kind of yolk-shell morphology of nano silicon with iron oxide coating (Si@Iron oxide). This material has been tested for half-cell lithium-ion battery configuration. The discharge capacity is found to be ≈ 600 mAh g-1 at a current rate of 1.0 A g-1 for 200 cycles. It has shown a stable performance as anode for Li-ion battery application.

Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

International Nuclear Information System (INIS)

Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

1999-12-01

Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

Silicon pore optics for future x-ray telescopes

Science.gov (United States)

Wille, Eric; Bavdaz, Marcos; Wallace, Kotska; Shortt, Brian; Collon, Maximilien; Ackermann, Marcelo; Günther, Ramses; Olde Riekerink, Mark; Koelewijn, Arenda; Haneveld, Jeroen; van Baren, Coen; Erhard, Markus; Kampf, Dirk; Christensen, Finn; Krumrey, Michael; Freyberg, Michael; Burwitz, Vadim

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The candidate mission ATHENA (Advanced Telescope for High Energy Astrophysics) required a mirror assembly of 1 m2 effective area (at 1 keV) and an angular resolution of 10 arcsec or better. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is being developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the recent upgrades made to the manufacturing processes and equipment, ranging from the manufacture of single mirror plates towards complete focusing mirror modules mounted in flight configuration, and results from first vibration tests. The performance of the mirror modules is tested at X-ray facilities that were recently extended to measure optics at a focal distance up to 20 m.

Systematic investigation of background sources in neutron flux measurements with a proton-recoil silicon detector

Energy Technology Data Exchange (ETDEWEB)

Marini, P., E-mail: marini@cenbg.in2p3.fr [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Mathieu, L. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Acosta, L. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, México D.F. 01000 (Mexico); Aïche, M.; Czajkowski, S.; Jurado, B.; Tsekhanovich, I. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France)

2017-01-01

Proton-recoil detectors (PRDs), based on the well known standard H(n,p) elastic scattering cross section, are the preferred instruments to perform precise quasi-absolute neutron flux measurements above 1 MeV. The limitations of using a single silicon detector as PRD at a continuous neutron beam facility are investigated, with the aim of extending such measurements to neutron energies below 1 MeV. This requires a systematic investigation of the background sources affecting the neutron flux measurement. Experiments have been carried out at the AIFIRA facility to identify these sources. A study on the role of the silicon detector thickness on the background is presented and an energy limit on the use of a single silicon detector to achieve a neutron flux precision better than 1% is given.

Effect of silicon and nanosilicon on reduction of damage caused by salt stress in maize (Zea mays seedlings

Directory of Open Access Journals (Sweden)

Assieh Behdad

2015-12-01

Full Text Available Salinity reduced the efficiency of agricultural production like maize as one of the most important cereals for food and oil for humans. Silicon is the second most abundant element in the soil and alleviates the biotic and abiotic stresses in plants. The aim of this study is evaluate the effect of silicon and nanosilicon on improvement of salt stress in maize (Zea mays. For this propose, the interaction between the effects of different levels of salinity (0 and 100 mM, silicon and nanosilicon (50, 100 and 150 mg /mL was studied in completely randomized block design with factorial experiments and with three replications. The results showed that salinity significantly decreased root and shoot growth, amount of chlorophyll and carotenoid pigments, protein and potassium contents, compared to control. Treating plants with silicon and nanosilicon caused reduction of salinity effects and increase above indices. Salinity stress also caused a significant increase in proline, anthocyanin and soluble carbohydrate contents, lipid peroxidation, and catalase activity and treatment with silicon and nanosilicon alleviates effects of salt stress and reduced the amount of above indices. 150 mg/mL of nanosilicon showed the maximum effect on diminishing negative effects of salt stress on all examined parameters. So, the use of this element is proposed as alleviator of salt stress on maize.

Behavior of silicon in nitric media. Application to uranium silicides fuels reprocessing

International Nuclear Information System (INIS)

Cheroux, L.

2001-01-01

Uranium silicides are used in some research reactors. Reprocessing them is a solution for their cycle end. A list of reprocessing scenarios has been set the most realistic being a nitric dissolution close to the classic spent fuel reprocessing. This uranium silicide fuel contains a lot of silicon and few things are known about polymerization of silicic acid in concentrated nitric acid. The study of this polymerization allows to point out the main parameters: acidity, temperature, silicon concentration. The presence of aluminum seems to speed up heavily the polymerization. It has been impossible to find an analytical technique smart and fast enough to characterize the first steps of silicic acid polymerization. However the action of silicic species on emulsions stabilization formed by mixing them with an organic phase containing TBP has been studied, Silicon slows down the phase separation by means of oligomeric species forming complex with TBP. The existence of these intermediate species is short and heating can avoid any stabilization. When non irradiated uranium silicide fuel is attacked by a nitric solution, aluminum and uranium are quickly dissolved whereas silicon mainly stands in solid state. That builds a gangue of hydrated silica around the uranium silicide particulates without preventing uranium dissolution. A small part of silicon passes into the solution and polymerize towards the highly poly-condensed forms, just 2% of initial silicon is still in molecular form at the end of the dissolution. A thermal treatment of the fuel element, by forming inter-metallic phases U-Al-Si, allows the whole silicon to pass into the solution and next to precipitate. The behavior of silicon in spent fuels should be between these two situations. (author)

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Extended volume and surface scatterometer for optical characterization of 3D-printed elements

Science.gov (United States)

Dannenberg, Florian; Uebeler, Denise; Weiß, Jürgen; Pescoller, Lukas; Weyer, Cornelia; Hahlweg, Cornelius

2015-09-01

The use of 3d printing technology seems to be a promising way for low cost prototyping, not only of mechanical, but also of optical components or systems. It is especially useful in applications where customized equipment repeatedly is subject to immediate destruction, as in experimental detonics and the like. Due to the nature of the 3D-printing process, there is a certain inner texture and therefore inhomogeneous optical behaviour to be taken into account, which also indicates mechanical anisotropy. Recent investigations are dedicated to quantification of optical properties of such printed bodies and derivation of corresponding optimization strategies for the printing process. Beside mounting, alignment and illumination means, also refractive and reflective elements are subject to investigation. The proposed measurement methods are based on an imaging nearfield scatterometer for combined volume and surface scatter measurements as proposed in previous papers. In continuation of last year's paper on the use of near field imaging, which basically is a reflective shadowgraph method, for characterization of glossy surfaces like printed matter or laminated material, further developments are discussed. The device has been extended for observation of photoelasticity effects and therefore homogeneity of polarization behaviour. A refined experimental set-up is introduced. Variation of plane of focus and incident angle are used for separation of various the images of the layers of the surface under test, cross and parallel polarization techniques are applied. Practical examples from current research studies are included.

Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

International Nuclear Information System (INIS)

Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

2012-01-01

Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

Fuel elements and safety engineering goals

International Nuclear Information System (INIS)

Schulten, R.; Bonnenberg, H.

1990-01-01

There are good prospects for silicon carbide anti-corrosion coatings on fuel elements to be realised, which opens up the chance to reduce the safety engineering requirements to the suitable design and safe performance of the ceramic fuel element. Another possibility offered is combined-cycle operation with high efficiencies, and thus good economic prospects, as with this design concept combining gas and steam turbines, air ingress due to turbine malfunction is an incident that can be managed by the system. This development will allow economically efficient operation also of nuclear power reactors with relatively small output, and hence contribute to reducing CO 2 emissions. (orig./DG) [de

Extended spider cognition.

Science.gov (United States)

Japyassú, Hilton F; Laland, Kevin N

2017-05-01

There is a tension between the conception of cognition as a central nervous system (CNS) process and a view of cognition as extending towards the body or the contiguous environment. The centralised conception requires large or complex nervous systems to cope with complex environments. Conversely, the extended conception involves the outsourcing of information processing to the body or environment, thus making fewer demands on the processing power of the CNS. The evolution of extended cognition should be particularly favoured among small, generalist predators such as spiders, and here, we review the literature to evaluate the fit of empirical data with these contrasting models of cognition. Spiders do not seem to be cognitively limited, displaying a large diversity of learning processes, from habituation to contextual learning, including a sense of numerosity. To tease apart the central from the extended cognition, we apply the mutual manipulability criterion, testing the existence of reciprocal causal links between the putative elements of the system. We conclude that the web threads and configurations are integral parts of the cognitive systems. The extension of cognition to the web helps to explain some puzzling features of spider behaviour and seems to promote evolvability within the group, enhancing innovation through cognitive connectivity to variable habitat features. Graded changes in relative brain size could also be explained by outsourcing information processing to environmental features. More generally, niche-constructed structures emerge as prime candidates for extending animal cognition, generating the selective pressures that help to shape the evolving cognitive system.

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

Science.gov (United States)

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Interactions of structural defects with metallic impurities in multicrystalline silicon

International Nuclear Information System (INIS)

McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

1997-01-01

Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

The Silicon Valley Eco System. High-energetic in many ways; Het Silicon Valley Eco Systeem: hoogenergetisch in vele opzichten

Energy Technology Data Exchange (ETDEWEB)

Van den Heuvel, J.

2012-04-15

The highly commended Silicon Valley Eco System is bubbling with energy with regard to the subjects that are focused upon, including sustainable energy, or the widely available expertise that is needed for the developments, good ideas, capital and optimism, fed by frequent examples of extraordinarily successful companies. The sheer endlessness of network opportunities joins all these elements frequently. This article addresses several noteworthy interactions in the field of sustainable energy over the last period. [Dutch] Het veel geroemde Silicon Valley eco systeem bruist van energie in de vorm van de onderwerpen waar men zich op richt, waaronder duurzame energie, of de ruim aanwezige expertise die nodig is voor de ontwikkelingen, goede ideeen, kapitaal, en optimisme, gevoed door regelmatige voorbeelden van buitensporig succesvolle bedrijven. De schier oneindige netwerkmogelijkheden brengen al deze elementen met grote regelmaat bij elkaar. In dit artikel volgen enkele vermeldenswaardige interacties op het vlak van duurzame energie uit de afgelopen periode.

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Silicon coating treatment to improve high temperature corrosion resistance of 9%Cr steels

International Nuclear Information System (INIS)

Hill, M.P.

1989-01-01

A silicon coating process is described which confers good protection on 9%Cr steels and alloys in CO 2 based atmospheres at high temperatures and pressures. The coatings are formed by decomposition of silane at temperatures above 720 K. Protective layers are typically up to 1 μm thick. The optimum coating conditions are discussed. The chemical state of the coatings has been investigated by X-ray photoelectron spectroscopy and has demonstrated the importance of avoiding silicon oxide formation during processing. Corrosion testing has been carried out for extended periods, up to 20 000 h, at temperatures between 753 and 853 K, in a simulated advanced gas cooled reactor gas at 4 MPa pressure. Benefit factors of up to 60 times have been measured for 9%Cr steels. Even higher values have been measured for 9Cr-Fe binary alloy on which a 1 μm coating was sufficient to eliminate significant oxidation over 19 000 h except at the specimen edges. The mechanism of protection is discussed. It is suggested that a silicon surface coating for protecting steels from high temperature corrosion has some advantages over adding silicon to the bulk metal. (author)

Nanostructured silicon-based biosensors for the selective identification of analytes of social interest

International Nuclear Information System (INIS)

D'Auria, Sabato; Champdore, Marcella de; Aurilia, Vincenzo; Parracino, Antonietta; Staiano, Maria; Vitale, Annalisa; Rossi, Mose; Rea, Ilaria; Rotiroti, Lucia; Rossi, Andrea M; Borini, Stefano; Rendina, Ivo; Stefano, Luca De

2006-01-01

Small analytes such as glucose, L-glutamine (Gln), and ammonium nitrate are detected by means of optical biosensors based on a very common nanostructured material, porous silicon (PSi). Specific recognition elements, such as protein receptors and enzymes, were immobilized on hydrogenated PSi wafers and used as probes in optical sensing systems. The binding events were optically transduced as wavelength shifts of the porous silicon reflectivity spectrum or were monitored via changes of the fluorescence emission. The biosensors described in this article suggest a general approach for the development of new sensing systems for a wide range of analytes of high social interest

10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

2000-08-11

The 10th Workshop provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions included the various aspects of impurities and defects in silicon-their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions also reviewed thin-film crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing requirements to meet the ambitious expansion goals described in the recently released US PV Industry Roadmap. The Workshop also provided an excellent opportunity for researchers in private industry and at universities to recognize a mutual need for future collaborative research. The three-day workshop consisted of presentations by invited speakers, followed by discussion sessions. In addition, there was two poster sessions presenting the latest research and development results. The subjects discussed included: solar cell processing, light-induced degradation, gettering and passivation, crystalline silicon growth, thin-film silicon solar cells, and impurities and defects. Two special sessions featured at this workshop: advanced metallization and interconnections, and characterization methods.

Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

CERN Document Server

Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

2009-01-01

The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

Iron and silicon effect on the phase composition of nickel-beryllium bronzes

International Nuclear Information System (INIS)

Zakharov, A.M.; Zakharov, M.V.; Ajvaz'yan, N.G.

1977-01-01

In order to specify phase composition and strengthening heat treatment conditions for nickel beryllium bronzes that are promising electrode materials for welding of high strength steels and nickel-base superalloys, the primary section of the quinternary Cu-Ni-Be-Fe-S system was studied at constant nickel and beryllium concentration and varying silicon and iron concentration (max. 4% of every element). The study was made using the metallographic and x-ray phase techniques, determination of alloy solidus temperature, and exessphase microhardness testing. Silicon additions are shown to decrease abruptly and those of iron, in contrast, somewhat to raise the solidus temperature of ternary Cu + 2% Ni + 0.3% Be alloy. When added concurrently, iron compensates for the damaging silicon effect on the solidus temperature of Cu-Ni-Be alloys. The excess phases formed can be used as strengthening agents of Cu-Ni-Be-Si-Fe alloys during quenching and subsequent aging

Silicon improves flowering characteristics of sunflower and petunia at low phosphorus rates

Science.gov (United States)

Silicon (Si) is recognized as a beneficial element for plant growth. In addition, it has been shown to reduce the severity of biotic and abiotic stress. The objective of this study was to determine the effects of Si on plant growth and development at low to moderate phosphorus (P) concentrations. ...

11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Extended Abstracts and Papers, 19-22 August 2001, Estes Park, Colorado

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.

2001-08-16

The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Directory of Open Access Journals (Sweden)

S. Reboh

2013-10-01

Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

Science.gov (United States)

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Transient processes induced by heavy projectiles in silicon

International Nuclear Information System (INIS)

Lazanu, Ionel; Lazanu, Sorina

2010-01-01

The thermal spike model developed for the electronic stopping power regime is extended to consider both ionization and nuclear energy loss processes of the projectile as electronic and atomic heat distinct sources. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated and discussed for different ions in silicon, at room and cryogenic temperatures, taking into account the peculiarities of electron-phonon interaction in both domains. The model developed contributes to the understanding of transient microscopic processes immediately after the projectile interaction in the target.

Experimental transconjunctival diode laser retinal photocoagulation through silicone scleral exoplants.

Science.gov (United States)

Nanda, S K; Han, D P

1995-07-01

To study the feasibility of inducing a chorioretinal lesion under a previously placed scleral buckle by experimental transconjunctival diode laser photocoagulation. We performed transconjunctival diode laser photocoagulation in the peripheral retinas of seven pigmented rabbit eyes with a silicone exoplant (No. 42 band or No. 276 tire) and seven eyes without an exoplant. Each eye received burns with an intensity of grades 1 to 3 in different quadrants at varying power levels, with a 0.5-second duration and 650-micron spot size. Eyes were enucleated for histopathologic studies 1 day and 1 week after treatment. Although the irradiance emitted through the No. 42 band and the No. 276 tire was attenuated by 17% and 23%, respectively, the range of threshold powers needed to produce grades 1 to 3 burns was similar between eyes with and without a silicone exoplant. At 1 day, full-thickness coagulative necrosis was observed in all lesions, except that the ganglion cell layer and inner nuclear layer were preserved in two of four grade 1 burns and the ganglion cell layer was intact in one of six grade 2 burns. Inner scleral changes were noted acutely in three of five grade 3 lesions. At 1 week, burns of all intensity grades showed a full-thickness atrophic chorioretinal lesion with inner scleral changes. Experimental transconjunctival diode laser photocoagulation through hard silicone elements reproducibly created a chorioretinal lesion with histopathologic findings similar to those of lesions obtained without these elements. Although retinal photocoagulative effects were prominent, inner scleral abnormalities were also observed histologically.

15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B. L.

2005-11-01

The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

Back-contacted back-junction silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Mangersnes, Krister

2010-10-15

have developed a two-dimensional BC-BJ silicon solar cell device model. The simulations, which are based on the finite element method, have been performed with the ATLAS device simulator within the Silvaco simulation framework from Silvaco Inc., USA. The device model has been used to optimize the design of a BC-BJ silicon solar cell based on experimental results obtained during the work with this thesis. The model is able to quantitatively predict the performance of cells with different designs, qualities, and dimensions through optical and electrical simulations, and thereby giving us a good indication of the efficiency potential of the cell structure. It has also given us valuable insight into the physics determining the performance of a BC-BJ silicon solar cell. From this insight, important conclusions regarding the design rules of this type of solar cell devices could be drawn. Finally, the device model was used to investigate quantum mechanical tunneling mechanisms in the junction between the adjacent, highly-doped regions of opposite polarity on the backside of the cell. Through the simulations we found some simple design rules that need to be followed in order to avoid shunting-like behavior due to unwanted trap-assisted tunneling in the lateral tunneling junction. At the same time, band-to-band tunneling entails potential current breakdowns at low to moderate reverse biases. This implies that local hot-spots can be avoided since the heat distribution under reverse bias will be distributed throughout the whole junction area. Thus, by careful optimization and tailoring of the doping profiles, the tunneling may enable the use of back-junction silicon solar cells in a solar module without the need for bypass diodes. (Author)

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

The space of extended orthomorphisms in a Riesz space

NARCIS (Netherlands)

De Pagter, B.

1984-01-01

We study the space Orth°°(L) of extended orthomorphisms in an Archimedean Riesz space L and its analogies with the complete ring of quotients of a commutative ring with unit element. It is shown that for any uniformly complete /-algebra A with unit element, Orth°°(?) is isomorphic with the complete

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

The Study of the Elemental Concentrations in the Some Rocks and Cements in Myanmar

International Nuclear Information System (INIS)

Khin Mar Kyu; Yi Yi Myint; San Yee

2006-06-01

X-ray fluorescence (XRF) spectrometry is an analytical technique widely used for elemental analysis in both industrial and research laboratories. In this paper, energy dispersive x-ray technique was used in nine rock samples and five cement samples to measure the elemental concentrations. By using EDX-700, silicon was found as major element containedin one rock sample, chorine was found as major element contained in four rock samples, calcium was found as major element contained in two rock samples and iron was found as major element contained in two rock samples. In all cement samples, calcium was found as major element

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Hot Embossing of Zr-Based Bulk Metallic Glass Micropart Using Stacked Silicon Dies

Directory of Open Access Journals (Sweden)

Zhijing Zhu

2015-01-01

Full Text Available We demonstrated hot embossing of Zr65Cu17.5Ni10Al7.5 bulk metallic glass micropart using stacked silicon dies. Finite element simulation was carried out, suggesting that it could reduce the stress below 400 MPa in the silicon dies and enhance the durability of the brittle silicon dies when using varying load mode (100 N for 60 s and then 400 N for 60 s compared with using constant load mode (200 N for 120 s. A micropart with good appearance was fabricated under the varying load, and no silicon die failure was observed, in agreement with the simulation. The amorphous state of the micropart was confirmed by differential scanning calorimeter and X-ray diffraction, and the nanohardness and Young’s modulus were validated close to those of the as-cast BMG rods by nanoindentation tests. The results proved that it was feasible to adopt the varying load mode to fabricate three-dimensional Zr-based bulk metallic glass microparts by hot embossing process.

Neutron-capture gamma-ray analysis of coal for sulfur, iron, silicon and moisture

International Nuclear Information System (INIS)

Fay, D.A.

1979-05-01

Samples of coal weighing approximately 200 grams placed in a collimated beam of neutrons from the thermal column of the Ames Laboratory Research Reactor produced capture gamma-rays which could be used for the simultaneous determination of sulfur and iron. Spectra from NaI(Tl) and Ge(Li) detectors were used and interferences were located by examining spectra of the major elemental components of coal. In determining sulfur, iron is a potential source of interference when gamma-ray spectra are collected with a NaI(Tl) detector. Corrections for iron interference were made by use of a higher energy iron peak. The possibility of determining silicon in coal was investigated but this element determination was unsuccessful since capture gamma-ray spectrometry lacked the necessary sensitivity for silicon. A linear relation was found between the area of the hydrogen capture peak at 2.23 MeV and the amount of water added to coal

Miniaturized flow cytometer with 3D hydrodynamic particle focusing and integrated optical elements applying silicon photodiodes

NARCIS (Netherlands)

Rosenauer, M.; Buchegger, W.; Finoulst, I.; Verhaert, P.D.E.M.; Vellekoop, M.

2010-01-01

In this study, the design, realization and measurement results of a novel optofluidic system capable of performing absorbance-based flow cytometric analysis is presented. This miniaturized laboratory platform, fabricated using SU-8 on a silicon substrate, comprises integrated polymer-based

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

A surface code quantum computer in silicon

Science.gov (United States)

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

Science.gov (United States)

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Chalcogen doping of silicon via intense femtosecond-laser irradiation

International Nuclear Information System (INIS)

Sheehy, Michael A.; Tull, Brian R.; Friend, Cynthia M.; Mazur, Eric

2007-01-01

We have previously shown that doping silicon with sulfur via femtosecond-laser irradiation leads to near-unity absorption of radiation from ultraviolet wavelengths to below band gap short-wave infrared wavelengths. Here, we demonstrate that doping silicon with two other group VI elements (chalcogens), selenium and tellurium, also leads to near-unity broadband absorption. A powder of the chalcogen dopant is spread on the silicon substrate and irradiated with femtosecond-laser pulses. We examine and compare the resulting morphology, optical properties, and chemical composition for each chalcogen-doped substrate before and after thermal annealing. Thermal annealing reduces the absorption of below band gap radiation by an amount that correlates with the diffusivity of the chalcogen dopant used to make the sample. We propose a mechanism for the absorption of below band gap radiation based on defects in the lattice brought about by the femtosecond-laser irradiation and the presence of a supersaturated concentration of chalcogen dopant atoms. The selenium and tellurium doped samples show particular promise for use in infrared photodetectors as they retain most of their infrared absorptance even after thermal annealing-a necessary step in many semiconductor device manufacturing processes

High frequency guided wave propagation in monocrystalline silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

Production and performance of the silicon sensor and readout electronics for the PHENIX FVTX tracker

International Nuclear Information System (INIS)

Kapustinsky, Jon Steven

2009-01-01

The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap is comprised of four silicon disks covering opening angles from 10 to 35 degrees to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 (micro)m radial pitch and proj ective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low power design.

Investigation on the Crack Behaviour in Kevlar 49 Based Composite Materials using Extended Finite Element Method for Aerospace Applications

Science.gov (United States)

Handa, Danish; Sekhar Dondapati, Raja; Kumar, Abhinav

2017-08-01

Ductile to brittle transition (DTBT) is extensively observed in materials under cryogenic temperatures, thereby observing brittle failure due to the non-resistance of crack propagation. Owing to its outstanding mechanical and thermal properties, Kevlar 49 composites are widely used in aerospace applications under cryogenic temperatures. Therefore, in this paper, involving the assumption of linear elastic fracture mechanics (LEFM), mechanical characterization of Kevlar 49 composite is done using Extended Finite Element Method (X-FEM) technique in Abaqus/CAE software. Further, the failure of Kevlar 49 composites due to the propagation of crack at room temperature and the cryogenic temperature is investigated. Stress, strain and strain energy density as a function of the width of the Kevlar specimen is predicted, indicates that Kevlar 49 composites are suitable for use under cryogenic temperatures.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Parallel Access of Out-Of-Core Dense Extendible Arrays

Energy Technology Data Exchange (ETDEWEB)

Otoo, Ekow J; Rotem, Doron

2007-07-26

Datasets used in scientific and engineering applications are often modeled as dense multi-dimensional arrays. For very large datasets, the corresponding array models are typically stored out-of-core as array files. The array elements are mapped onto linear consecutive locations that correspond to the linear ordering of the multi-dimensional indices. Two conventional mappings used are the row-major order and the column-major order of multi-dimensional arrays. Such conventional mappings of dense array files highly limit the performance of applications and the extendibility of the dataset. Firstly, an array file that is organized in say row-major order causes applications that subsequently access the data in column-major order, to have abysmal performance. Secondly, any subsequent expansion of the array file is limited to only one dimension. Expansions of such out-of-core conventional arrays along arbitrary dimensions, require storage reorganization that can be very expensive. Wepresent a solution for storing out-of-core dense extendible arrays that resolve the two limitations. The method uses a mapping function F*(), together with information maintained in axial vectors, to compute the linear address of an extendible array element when passed its k-dimensional index. We also give the inverse function, F-1*() for deriving the k-dimensional index when given the linear address. We show how the mapping function, in combination with MPI-IO and a parallel file system, allows for the growth of the extendible array without reorganization and no significant performance degradation of applications accessing elements in any desired order. We give methods for reading and writing sub-arrays into and out of parallel applications that run on a cluster of workstations. The axial-vectors are replicated and maintained in each node that accesses sub-array elements.

Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

Science.gov (United States)

Aalto, Timo; Cherchi, Matteo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani

2014-03-01

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Directory of Open Access Journals (Sweden)

Thi Dep Ha

2016-04-01

Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

2016-04-15

Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

Research and development project for industrial and scientific technologies in fiscal 1999. An achievement report on research and development of quantization functioning elements (surveys and studies on technological trends); 1999 nendo ryoshika kino soshi no kenkyu kaihatsu seika hokokusho. Gijutsu doko chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to serve for research and development of quantization functioning elements, surveys have been made on research activities related to ancillary technologies and related technologies for the quantization functioning element project. This paper summarizes the status of researches in each field and the technological trends therein with regard to theoretical and experimental development activities on new silicon-based and compound-based elements in the quantization functioning element project, generalization of the current status of the project as a whole, and the prospects thereon. Regarding the current status and future of the quantization functioning elements, the paper describes the causes for the decline of the Japanese semiconductor industry, and discussions on strategies for revitalization of the semiconductor industry. The paper also describes the followings: the current status of the compound-based quantization functioning element project, design methods for quantization functioning elements using silicon as the base and the ultimate single electron integrated circuits, the current status and problems of the compound-based quantization functioning elements, circuit and system technologies related to quantization functioning elements, proposals on silicon nano-devices and neo-silicon, and the future prospects on silicon- based quantum effect devices and single electron devices, and compound semiconductor devices. (NEDO)

Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-06-09

We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

Assessment of the effect of silicon on antioxidant enzymes in cotton plants by multivariate analysis.

Science.gov (United States)

Alberto Moldes, Carlos; Fontão de Lima Filho, Oscar; Manuel Camiña, José; Gabriela Kiriachek, Soraya; Lia Molas, María; Mui Tsai, Siu

2013-11-27

Silicon has been extensively researched in relation to the response of plants to biotic and abiotic stress, as an element triggering defense mechanisms which activate the antioxidant system. Furthermore, in some species, adding silicon to unstressed plants modifies the activity of certain antioxidant enzymes participating in detoxifying processes. Thus, in this study, we analyzed the activity of antioxidant enzymes in leaves and roots of unstressed cotton plants fertilized with silicon (Si). Cotton plants were grown in hydroponic culture and added with increasing doses of potassium silicate; then, the enzymatic activity of catalase (CAT), guaiacol peroxidase (GPOX), ascorbate peroxidase (APX), and lipid peroxidation were determined. Using multivariate analysis, we found that silicon altered the activity of GPOX, APX, and CAT in roots and leaves of unstressed cotton plants, whereas lipid peroxidation was not affected. The analysis of these four variables in concert showed a clear differentiation among Si treatments. We observed that enzymatic activities in leaves and roots changed as silicon concentration increased, to stabilize at 100 and 200 mg Si L(-1) treatments in leaves and roots, respectively. Those alterations would allow a new biochemical status that could be partially responsible for the beneficial effects of silicon. This study might contribute to adjust the silicon application doses for optimal fertilization, preventing potential toxic effects and unnecessary cost.

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

Hydroxyapatites enriched in silicon – Bioceramic materials for biomedical and pharmaceutical applications

Directory of Open Access Journals (Sweden)

Katarzyna Szurkowska

2017-08-01

Full Text Available Hydroxyapatite (Ca10(PO46(OH2, abbreviated as HA plays a crucial role in implantology, dentistry and bone surgery. Due to its considerable similarity to the inorganic fraction of the mineralized tissues (bones, enamel and dentin, it is used as component in many bone substitutes, coatings of metallic implants and dental materials. Biomaterial engineering often takes advantage of HA capacity for partial ion substitution because the incorporation of different ions in the HA structure leads to materials with improved biological or physicochemical properties. The objective of the work is to provide an overview of current knowledge about apatite materials substituted with silicon ions. Although the exact mechanism of action of silicon in the bone formation process has not been fully elucidated, research has shown beneficial effects of this element on bone matrix mineralization as well as on collagen type I synthesis and stabilization. The paper gives an account of the functions of silicon in bone tissue and outlines the present state of research on synthetic HA containing silicate ions (Si-HA. Finally, methods of HA production as well as potential and actual applications of HA materials modified with silicon ions are discussed.

Bioconjugate functionalization of thermally carbonized porous silicon using a radical coupling reaction†

Science.gov (United States)

Sciacca, Beniamino; Alvarez, Sara D.; Geobaldo, Francesco; Sailor, Michael J.

2011-01-01

The high stability of Salonen’s thermally carbonized porous silicon (TCPSi) has attracted attention for environmental and biochemical sensing applications, where corrosion-induced zero point drift of porous silicon-based sensor elements has historically been a significant problem. Prepared by the high temperature reaction of porous silicon with acetylene gas, the stability of this silicon carbide-like material also poses a challenge—many sensor applications require a functionalized surface, and the low reactivity of TCPSi has limited the ability to chemically modify its surface. This work presents a simple reaction to modify the surface of TCPSi with an alkyl carboxylate. The method involves radical coupling of a dicarboxylic acid (sebacic acid) to the TCPSi surface using a benzoyl peroxide initiator. The grafted carboxylic acid species provides a route for bioconjugate chemical modification, demonstrated in this work by coupling propylamine to the surface carboxylic acid group through the intermediacy of pentafluorophenol and 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide hydrochloride (EDC). The stability of the carbonized porous Si surface, both before and after chemical modification, is tested in phosphate buffered saline solution and found to be superior to either hydrosilylated (with undecylenic acid) or thermally oxidized porous Si surfaces. PMID:20967329

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Silicon waveguided components for the long-wave infrared region

Science.gov (United States)

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

2006-10-01

We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Irradiation behaviour of advanced fuel elements for the helium-cooled high temperature reactor (HTR)

International Nuclear Information System (INIS)

Nickel, H.

1990-05-01

The design of modern HTRs is based on high quality fuel. A research and development programme has demonstrated the satisfactory performance in fuel manufacturing, irradiation testing and accident condition testing of irradiated fuel elements. This report describes the fuel particles with their low-enriched UO 2 kernels and TRISO coating, i.e. a sequence of pyrocarbon, silicon carbide, and pyrocarbon coating layers, as well as the spherical fuel element. Testing was performed in a generic programme satisfying the requirements of both the HTR-MODUL and the HTR 500. With a coating failure fraction less than 2x10 -5 at the 95% confidence level, the results of the irradiation experiments surpassed the design targets. Maximum accident temperatures in small, modular HTRs remain below 1600deg C, even in the case of unrestricted core heatup after depressurization. Here, it was demonstrated that modern TRISO fuels retain all safety-relevant fission products and that the fuel does not suffer irreversible changes. Isothermal heating tests have been extended to 1800deg C to show performance margins. Ramp tests to 2500deg C demonstrate the limits of present fuel materials. A long-term programm is planned to improve the statistical significance of presently available results and to narrow remaining uncertainty limits. (orig.) [de

Silicon: Potential to Promote Direct and Indirect Effects on Plant Defense Against Arthropod Pests in Agriculture

Science.gov (United States)

Reynolds, Olivia L.; Padula, Matthew P.; Zeng, Rensen; Gurr, Geoff M.

2016-01-01

Silicon has generally not been considered essential for plant growth, although it is well recognized that many plants, particularly Poaceae, have substantial plant tissue concentrations of this element. Recently, however, the International Plant Nutrition Institute [IPNI] (2015), Georgia, USA has listed it as a “beneficial substance”. This reflects that numerous studies have now established that silicon may alleviate both biotic and abiotic stress. This paper explores the existing knowledge and recent advances in elucidating the role of silicon in plant defense against biotic stress, particularly against arthropod pests in agriculture and attraction of beneficial insects. Silicon confers resistance to herbivores via two described mechanisms: physical and biochemical/molecular. Until recently, studies have mainly centered on two trophic levels; the herbivore and plant. However, several studies now describe tri-trophic effects involving silicon that operate by attracting predators or parasitoids to plants under herbivore attack. Indeed, it has been demonstrated that silicon-treated, arthropod-attacked plants display increased attractiveness to natural enemies, an effect that was reflected in elevated biological control in the field. The reported relationships between soluble silicon and the jasmonic acid (JA) defense pathway, and JA and herbivore-induced plant volatiles (HIPVs) suggest that soluble silicon may enhance the production of HIPVs. Further, it is feasible that silicon uptake may affect protein expression (or modify proteins structurally) so that they can produce additional, or modify, the HIPV profile of plants. Ultimately, understanding silicon under plant ecological, physiological, biochemical, and molecular contexts will assist in fully elucidating the mechanisms behind silicon and plant response to biotic stress at both the bi- and tri-trophic levels. PMID:27379104

Silicon: Potential to Promote Direct and Indirect Effects on Plant Defense Against Arthropod Pests in Agriculture.

Science.gov (United States)

Reynolds, Olivia L; Padula, Matthew P; Zeng, Rensen; Gurr, Geoff M

2016-01-01

Silicon has generally not been considered essential for plant growth, although it is well recognized that many plants, particularly Poaceae, have substantial plant tissue concentrations of this element. Recently, however, the International Plant Nutrition Institute [IPNI] (2015), Georgia, USA has listed it as a "beneficial substance". This reflects that numerous studies have now established that silicon may alleviate both biotic and abiotic stress. This paper explores the existing knowledge and recent advances in elucidating the role of silicon in plant defense against biotic stress, particularly against arthropod pests in agriculture and attraction of beneficial insects. Silicon confers resistance to herbivores via two described mechanisms: physical and biochemical/molecular. Until recently, studies have mainly centered on two trophic levels; the herbivore and plant. However, several studies now describe tri-trophic effects involving silicon that operate by attracting predators or parasitoids to plants under herbivore attack. Indeed, it has been demonstrated that silicon-treated, arthropod-attacked plants display increased attractiveness to natural enemies, an effect that was reflected in elevated biological control in the field. The reported relationships between soluble silicon and the jasmonic acid (JA) defense pathway, and JA and herbivore-induced plant volatiles (HIPVs) suggest that soluble silicon may enhance the production of HIPVs. Further, it is feasible that silicon uptake may affect protein expression (or modify proteins structurally) so that they can produce additional, or modify, the HIPV profile of plants. Ultimately, understanding silicon under plant ecological, physiological, biochemical, and molecular contexts will assist in fully elucidating the mechanisms behind silicon and plant response to biotic stress at both the bi- and tri-trophic levels.

Determination of carbon and nitrogen in silicon and germanium

International Nuclear Information System (INIS)

Gebauhr, W.; Martin, J.

1975-01-01

The essential aim of this study is to examine the various technical and economic problems encountered in the determination of carbon and nitrogen in silicon and germanium, for this is in a way an extension of the discussion concerning the presence of oxygen in these two elements. The greater part of the study is aimed at drawing up a catalogue of the methods of analysis used and of the results obtained so far

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

The readout system of the new H1 silicon detectors

International Nuclear Information System (INIS)

Buerger, J.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Henschel, H.; Haynes, W.J.; Noyes, G.W.; Joensson, L.; Gabathuler, K.; Horisberger, R.; Wagener, M.; Eichler, R.; Erdmann, W.; Niggli, H.; Pitzl, D.

1995-03-01

The H1 detector at HERA at DESY undergoes presently a major upgrade. In this context silicon strip detectors have been installed at beginning of 1995. The high bunch crossing frequency of HERA (10.4 MHz) demands a novel readout architecture which includes pipelining, signal processing and data reduction at a very early stage. The front end readout is hierarchically organized. The detector elements are read out by the APC chip which contains an analog pipeline and performs first background subtraction. Up to five readout chips are controlled by a Decoder Chip. The readout processor module (OnSiRoC) operates the detectors, controls the Decoder Chips and performs a first level data reduction. The paper describes the readout architecture of the H1 Silicon Detectors and performance data of the complete readout chain. (orig.)

Direct writing of sub-wavelength ripples on silicon using femtosecond laser at high repetition rate

International Nuclear Information System (INIS)

Xie, Changxin; Li, Xiaohong; Liu, Kaijun; Zhu, Min; Qiu, Rong; Zhou, Qiang

2016-01-01

Graphical abstract: - Highlights: • The NSRs and DSRs are obtained on silicon surface. • With increasing direct writing speed, the NSRs suddenly changes and becomes the DSRs. • We develop a Sipe–Drude interference theory by considering the thermal excitation. - Abstract: The near sub-wavelength and deep sub-wavelength ripples on monocrystalline silicon were formed in air by using linearly polarized and high repetition rate femtosecond laser pulses (f = 76 MHz, λ = 800 nm, τ = 50 fs). The effects of laser pulse energy, direct writing speed and laser polarization on silicon surface morphology are studied. When the laser pulse energy is 2 nJ/pulse and the direct writing speed varies from 10 to 25 mm/s, the near sub-wavelength ripples (NSRs) with orientation perpendicular to the laser polarization are generated. While the direct writing speed reaches 30 mm/s, the direction of the obtained deep sub-wavelength ripples (DSRs) suddenly changes and becomes parallel to the laser polarization, rarely reported so far for femtosecond laser irradiation of silicon. Meanwhile, we extend the Sipe–Drude interference theory by considering the thermal excitation, and numerically calculate the efficacy factor for silicon irradiated by femtosecond laser pulses. The revised Sipe–Drude interference theoretical results show good agreement with the periods and orientations of sub-wavelength ripples.

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Works of art investigation with silicon drift detectors

CERN Document Server

Leutenegger, P; Fiorini, C; Strüder, L; Kemmer, J; Lechner, P; Sciuti, S; Cesareo, R

2000-01-01

The X-ray fluorescence (XRF) spectroscopy analysis is a non-destructive technique widely used in archeometry to investigate the chemical composition of pigments, metal alloys and stones for restoration and historical investigation. The classical detection systems for archeometrical investigations utilize cryogenic detectors, like Si(Li) and HPGe, characterized by a satisfactory energy resolution (of the order of 140 eV FWHM at 6 keV). However, the requirements of liquid N sub 2 drastically limit the portability of such systems, limiting the possibility of making measurements 'on the field'. Recently new silicon PIN diodes Peltier cooled were introduced, allowing the construction of portable instrumentation. However, their energy resolution (of the order of 250 eV FWHM at 6 keV) results in some cases unsatisfactory (for instance in the identification of light elements). Both the requirements of portability and good energy resolution are fulfilled by the silicon drift detector (SDD). The SDD, cooled by a Peltie...

Photonic intermediate layer for silicon tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Bielawny, Andreas; Miclea, Paul-Tiberiu; Wehrspohn, Ralf [Martin-Luther Universitaet Halle-Wittenberg (Germany). Inst. fuer Physik, Mikro-MD; Lee, Seuong-Mo; Knez, Mato [Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany); Carius, Reinhard [Forschungszentrum Juelich (DE). Inst. fuer Photovoltaik (IEF-5); Lisca, Marian; Rockstuhl, Carsten; Lederer, Falk [Universitaet Jena (Germany). Dept. Physik

2008-07-01

The concept of incorporation of a 3D photonic crystal as diffractive spectral filter within a-Si/mc-Si tandem solar cells has been investigated as a promising application. Our intermediate reflective filter enhances the pathway of spectrally selected light within an amorphous silicon top cell in its spectral region of low absorption. From our previous work, we expect a significant improvement of the tandem's efficiency of about 1.2%(absolute). This increases efficiency for a typical silicon tandem cell from 11.2% to 12.4%, as a result of the optical current-matching of the two junctions. Our wavelength-selective optical element is a 3D-structured optical thin-film - prepared by self-organized artificial opal templates and finalized with atomic layer deposition techniques. The resulting samples are highly periodical thin-film inverted opals made of zinc-oxide. We compare recent experimental data on the optical properties with our simulations and photonic bandstructure calculations.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

An investigation into the use of large area silicon semiconductors in microwave systems

International Nuclear Information System (INIS)

Holliday, H.R.

1999-09-01

Semiconductor microwave devices are usually manufactured using micron or sub-micron geometries. The equipment needed for these techniques has a high capital cost and demands high overheads. The material traditionally processed for microwave applications is gallium arsenide but during the period of this investigation a move towards the use of silicon and silicon germanium has emerged. This study, which is essentially practical, covers a range of new ideas for components using large area silicon devices. In the course of the study considerable progress has also been made in the understanding of the behaviour of silicon at microwave frequencies, and some of the initial Concepts were shown to be invalid. An accurate determination of the dielectric constant of silicon has been made using quasi optical techniques at microwave frequencies. The fabrication techniques described originate from methods used at Q-par Angus to manufacture large area silicon nuclear radiation detectors. Developed at the University of Birmingham, these are 'wet chemistry' methods that preclude the need for diffusion or other conventional semiconductor processing techniques. Novel microwave components have been developed using these techniques. These include an optically controlled attenuator with multioctave bandwidth and good dynamic range; window devices to reduce the radar cross section of microwave antennas; and microwave cavity devices including a variable-Q cavity. Concepts for millimeter wave filters are discussed, as are areas for further research. During the attenuator study Wheeler's equations have been extended to cover truncated microstrip. It was observed at an early stage in the work that optical excitation was very effective as a method of controlling the devices. This fits well with current trends in electro-optical devices. The piezo resistance effect in silicon has been briefly investigated and a mechanical attenuator exploiting this effect has been developed. (author)

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Science.gov (United States)

De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

2017-10-01

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

Energy Technology Data Exchange (ETDEWEB)

Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

2015-12-30

Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Directory of Open Access Journals (Sweden)

V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Effects of transverse temperature field nonuniformity on stress in silicon sheet growth

Science.gov (United States)

Mataga, P. A.; Hutchinson, J. W.; Chalmers, B.; Bell, R. O.; Kalejs, J. P.

1987-01-01

Stress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.

Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

International Nuclear Information System (INIS)

Kapustinsky, Jon S.

2010-01-01

The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10 o to 35 o to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 μm radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

Energy Technology Data Exchange (ETDEWEB)

Kapustinsky, Jon S., E-mail: jonk@lanl.go [Los Alamos National Laboratory, Mailstop H846, PO Box 1663, Los Alamos, 87545 New Mexico (United States)

2010-05-21

The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10{sup o} to 35{sup o} to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 {mu}m radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

This research was intended to establish technology for the substrate of an environmental resistance reinforcing element in which environmental resistance was enhanced against radiation, heat, mechanical shock, etc., for the purpose of realizing various kinds of equipment and devices for performing advanced information processing under severe environmental conditions of outer space, nuclear reactors, travelling objects such as automobiles and aircrafts, and plants. In the R and D of the technology of a MOS type silicon integrated circuit element, a low temperature generalizing process technology was developed, with selection made for SOS and bulk silicon. In addition, strength of a wiring connecting part was examined, as was the heat dissipation of the package. In the R and D of the technology of a bipolar type silicon integrated circuit element, examined were the element design/integration-technology/materials, evaluation and optimization of the processing technology, reproducibility of the factor processing technology, environmentally resistant plastic packages, etc. In the R and D of the technology of a compound semiconductor integrated circuit element, analysis of a gate electrode structure and deteriorating mechanism was made, as was the influence of the element structure parameter on environmental resistance, with an improved trial manufacturing and an environmental test performed for the actually mounted bodies. (NEDO)

Analysis of trace elements in opal using PIXE

Energy Technology Data Exchange (ETDEWEB)

Hinrichs, Ruth, E-mail: ruth.hinrichs@ufrgs.br [Instituto de Geociências, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS (Brazil); Programa de Pós-graduação em Física, UFRGS, Porto Alegre, RS (Brazil); Bertol, A.P.L. [Programa de Pós-graduação em Física, UFRGS, Porto Alegre, RS (Brazil); Vasconcellos, M.A.Z. [Programa de Pós-graduação em Física, UFRGS, Porto Alegre, RS (Brazil); Instituto de Física, UFRGS, Porto Alegre, RS (Brazil)

2015-11-15

Particle induced X-ray emission (PIXE) analysis is particularly important for the analysis of trace elements of precious samples, being one of the few methods to determine elements with ppm concentration that does not affect sample integrity. A PIXE methodology for trace element analysis in opal was developed. To avoid detector count saturation due to the high number of Si-Kα X-rays generated in the sample, several filters were employed to optimize the reduction of the Si-Kα signal, while maintaining acceptable intensities of the other relevant X-ray lines. Two proton beam energies were tested, to establish the signal to noise ratio in different X-ray energies. Spectra were fitted with the software GUPIX, using a matrix composition determined with electron beam excited energy dispersive X-ray spectrometry. Above the energy of the silicon X-ray, several trace elements were quantified.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

Science.gov (United States)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

A facile fluorescent sensor based on silicon nanowires for dithionite

Science.gov (United States)

Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

2018-05-01

A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

Assembly procedure of the module (half-stave) of the ALICE Silicon Pixel Detector

CERN Document Server

Caselle, M; Antinori, F; Burns, M; Campbell, M; Chochula, P; Dinapoli, R; Elia, D; Formenti, F; Fini, R A; Ghidini, B; Kluge, A; Lenti, V; Manzari, V; Meddi, F; Morel, M; Navach, F; Nilsson, P; Pepato, Adriano; Riedler, P; Santoro, R; Stefanini, G; Viesti, G; Wyllie, K

2004-01-01

The Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). The detector includes 1200 readout ASICs, each containing 8192 pixel cells, bump-bonded to Si sensor elements. The thickness of the readout chip and the sensor element is 150mum and 200mum, respectively. Low-mass solutions are implemented for the bus and the mechanical support. In this contribution, we describe the basic module (half-stave) of the two SPD layers and we give an overview of its assembly procedure.

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

High Performance Microaccelerometer with Wafer-level Hermetic Packaged Sensing Element and Continuous-time BiCMOS Interface Circuit

International Nuclear Information System (INIS)

Ko, Hyoungho; Park, Sangjun; Paik, Seung-Joon; Choi, Byoung-doo; Park, Yonghwa; Lee, Sangmin; Kim, Sungwook; Lee, Sang Chul; Lee, Ahra; Yoo, Kwangho; Lim, Jaesang; Cho, Dong-il

2006-01-01

A microaccelerometer with highly reliable, wafer-level packaged MEMS sensing element and fully differential, continuous time, low noise, BiCMOS interface circuit is fabricated. The MEMS sensing element is fabricated on a (111)-oriented SOI wafer by using the SBM (Sacrificial/Bulk Micromachining) process. To protect the silicon structure of the sensing element and enhance the reliability, a wafer level hermetic packaging process is performed by using a silicon-glass anodic bonding process. The interface circuit is fabricated using 0.8 μm BiCMOS process. The capacitance change of the MEMS sensing element is amplified by the continuous-time, fully-differential transconductance input amplifier. A chopper-stabilization architecture is adopted to reduce low-frequency noise including 1/f noise. The fabricated microaccelerometer has the total noise equivalent acceleration of 0.89 μg/√Hz, the bias instability of 490 μg, the input range of ±10 g, and the output nonlinearity of ±0.5 %FSO

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Quantification of EFTEM elemental maps using ion beam techniques

Energy Technology Data Exchange (ETDEWEB)

Lindner, J.K.N. [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany)]. E-mail: lindner@physik.uni-augsburg.de; Haeberlen, M. [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany); Schwarz, F. [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany); AxynTeC Duennschichttechnik GmbH, Am Mittleren Moos 49, 86167 Augsburg (Germany); Thorwarth, G. [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany); AxynTeC Duennschichttechnik GmbH, Am Mittleren Moos 49, 86167 Augsburg (Germany); Stritzker, B. [Institut fuer Physik, Universitaet Augsburg, 86135 Augsburg (Germany); Hammerl, C. [AxynTeC Duennschichttechnik GmbH, Am Mittleren Moos 49, 86167 Augsburg (Germany); Assmann, W. [Sektion Physik der LMU Muenchen, Am Coulombwall 6, 85748 Garching (Germany)

2006-08-15

In this paper the nanometric spatial resolution capabilities of energy filtered cross-sectional transmission electron microscopy (EFTEM) element mapping are complemented with the ability of elastic recoil detection analysis (ERDA) and Rutherford backscattering spectroscopy (RBS) to perform absolute and standardless composition analysis of light and heavy elements. The strength of this combination of techniques is examplified by means of several {mu}m thick multielemental wear protection multilayer stacks of diamond-like carbon (DLC) and silicon compounds with individual sublayers of few ten nanometer thickness, which were analysed with respect to their composition. The result are quantitative high-resolution 2-dimensional distributions of different elements in the several {mu}m thick film sandwiches.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Extended short wavelength infrared HgCdTe detectors on silicon substrates

Science.gov (United States)

Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

2016-09-01

We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

Effect of non-ideal clamping shape on the resonance frequencies of silicon nanocantilevers

Energy Technology Data Exchange (ETDEWEB)

Guillon, Samuel; Saya, Daisuke; Mazenq, Laurent; Nicu, Liviu [CNRS, LAAS, 7 Avenue du Colonel Roche, F-31077 Toulouse Cedex 4 (France); Perisanu, Sorin; Vincent, Pascal [LPMCN, Universite Claude Bernard Lyon 1 et CNRS, 43 boulevard du 11 novembre 1918, 69622 Villeurbanne Cedex (France); Lazarus, Arnaud; Thomas, Olivier, E-mail: sguillon@laas.fr [Structural Mechanics and Coupled Systems Laboratory, Conservatoire National des Arts et Metiers, 2 rue Conte, 75003 Paris (France)

2011-06-17

In this paper, we investigate the effects of non-ideal clamping shapes on the dynamic behavior of silicon nanocantilevers. We fabricated silicon nanocantilevers using silicon on insulator (SOI) wafers by employing stepper ultraviolet (UV) lithography, which permits a resolution of under 100 nm. The nanocantilevers were driven by electrostatic force inside a scanning electron microscope (SEM). Both lateral and out-of-plane resonance frequencies were visually detected with the SEM. Next, we discuss overhanging of the cantilever support and curvature at the clamping point in the silicon nanocantilevers, which generally arises in the fabrication process. We found that the fundamental out-of-plane frequency of a realistically clamped cantilever is always lower than that for a perfectly clamped cantilever, and depends on the cantilever width and the geometry of the clamping point structure. Using simulation with the finite-elements method, we demonstrate that this discrepancy is attributed to the particular geometry of the clamping point (non-zero joining curvatures and a flexible overhanging) that is obtained in the fabrication process. The influence of the material orthotropy is also investigated and is shown to be negligible.

Silicon accumulation and distribution in petunia and sunflower grown in a rice hull-amended substrate

Science.gov (United States)

Silicon (Si) is a plant beneficial element associated with mitigation of abiotic and biotic stresses. Most greenhouse-grown ornamentals are considered low Si accumulators based on foliar Si concentration. However, Si accumulates in all tissues, and there is little published data on the distributio...

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Science.gov (United States)

Blewer, Robert S.; Gullinger, Terry R.; Kelly, Michael J.; Tsao, Sylvia S.

1991-01-01

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

Silicon: electrochemistry and luminescence

NARCIS (Netherlands)

Kooij, Ernst Stefan

1997-01-01

The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Role of oxygen concentration distribution and microstructure in luminescent properties of laser-irradiated silicon

International Nuclear Information System (INIS)

Zhu, Min; Li, Xiaohong; Li, Guoqiang; Xie, Changxin; Qiu, Rong; Li, Jiawen; Huang, Wenhao

2015-01-01

Graphical abstract: Photoluminescence (PL) of monocrystalline silicon irradiated by femtosecond laser pulses was studied. The visible blue luminescence is observed both from the deionized water and air. The position and shape of emission luminescence peaks in the visible range are same at 330 nm. The PL is confirmed to be not merely induced by the oxygen defects or quantum confinement effects, but is commonly decided by the concentration distribution of SiO x and the depth of the surface microstructure. The PL gets strongest only when depth of the surface microstructure is not deeper and the distribution of the shallow SiO x is more intensive. - Highlights: • Different morphologies and compositions of the surface microstructures are formed. • The SiO x concentration and surface microstructure depth commonly decide the PL. • The PL intensity can be controlled by changing the experimental conditions. - Abstract: We study the photoluminescence (PL) of monocrystalline silicon irradiated by femtosecond laser pulses in different environments (deionized water and air) and energy intensities. The fluorescence spectroscopy measurement results indicate that the visible blue luminescence is observed both from the silicon surfaces ablated in the deionized water and air. The more interesting phenomenon is that the position and shape of the emission luminescence peaks in the visible range are substantially the same at the same excitation wavelength 330 nm. Compared with the granular-like microstructure generated on the silicon surface in air, the smaller and stripe-like microstructure is formed in the deionized water as the field emission scanning electron microscope (FESEM) measures. The results of the energy dispersive spectroscopy (EDS) show that silicon and oxygen is the main elemental composition on laser-induced silicon surfaces, and the oxygen content on the sample surfaces formed in air is nearly four times more than that in the deionized water. The studies confirm

Neutron activation analysis for environmental trace element research determination of elemental composition of sediments in the Sea of Galillee, Israel

Energy Technology Data Exchange (ETDEWEB)

Lavi, N; Ne` eman, E; Brenner, S; Butenko, V [Tel Aviv Univ. (Israel). Medical School

1996-12-01

The aims of this work were to: a) demonstrate the effectiveness of instrumental neutron activation analysis for determining the background concentrations of trace elements in the sediments collected from the Sea of Gallile. b) determine the advantage factors for epithermal neutron irradiation. c) determine the contribution of silicon to the total {sup 28}Al activity by the {sup 28}Si(n,p){sup 28}Al reaction. c) check the validity of the method by determining the elemental content of U.S. NBS Standard Reference Material SRM-1633a (fly ash). d) calculate the average enrichment factors for the elements in sediments . e) determine the concentrations of the artificial radionuclides {sup 134}Cs, {sup 137}Cs and the naturally occurring radionuclides {sup 40}K, {sup 226}Ra and {sup 232}Th (authors).

Nuclear fuel element leak detection system

International Nuclear Information System (INIS)

John, C.D. Jr.

1978-01-01

Disclosed is a leak detection system integral with a wall of a building used to fabricate nuclear fuel elements for detecting radiation leakage from the nuclear fuel elements as the fuel elements exit the building. The leak detecting system comprises a shielded compartment constructed to withstand environmental hazards extending into a similarly constructed building and having sealed doors on both ends along with leak detecting apparatus connected to the compartment. The leak detecting system provides a system for removing a nuclear fuel element from its fabrication building while testing for radiation leaks in the fuel element

Mass transfer in silicon at deposition of Ti thin films assisted by self ion irradiation

International Nuclear Information System (INIS)

Mikhalkovich, O.M.; Tashlykov, I.S.; Gusakov, V.E.

2011-01-01

In this paper a composite structure, processes of diffusion in Si, modified by means of ion-assisted deposition of coatings in conditions of a self-irradiation are discussed. Rutherford backscattering in combination with a channelling (RBS/Ch) of He + ions and computer program RUMP were applied to investigate an element composition. It is established, that coatings include atoms of metal, hydrogen, carbon, oxygen, silicon. The interstitial Si atoms, generated by radiation effect, diffuse during deposition of thin coating, both in a depth of a wafers, and in coatings. The influence of irradiation of ions Xe+ on diffusion processes in silicon are revealed. (authors)

Application of trace element analysis to determine trace element concentrations in the field of medicine. [Neutrons

Energy Technology Data Exchange (ETDEWEB)

Kasperek, K; Feinendegen, L E

1976-01-01

Applied trace elements research in medicine requires a sensitive and efficient technique of trace elements analysis, such as neutron activation analysis. Essential trace elements act as stabilizators (iron in haem), structural elements (silicon in fibrous tissue), in hormones (iodine in thyroid hormone), in vitamins (cobalt in vitamin B 12), and in enzymes. Most of the essential trace elements act as coenzymes or in coenzymes or directly as metabolic catalyzers. For example, selenium deficiency in PKU and maple syrup patients receiving dietary treatment can be detected by determining the selenium content of the serum, while low selenium values in the whole blood indicate liver cirrhosis. Acrodermatitis enteropathica can be diagnosed by determinig zinc in the serum, and pancreatic insufficiency by determining zinc in the pancreatic juice. Zinc also plays a part in disturbances of growth, in the healing of wounds, and in the insulin metabolism. Cobalt is important in some types of anaemia and in myocardiopathies. Trace elements are also necessary in the treatment of diseases, e.g. iron cobalt in some types of anaemia, and zinc in the delayed healing of wounds in the postoperative phase and in acrodermatitis enteropathica. Chromium is now being tested for the treatment of diabetes mellitus, and fluorides may be of interest in the treatment of osteoporosis. Finally, trace elements are important in the aetiology of acute poisoning, in nutrition, and in environmental protection.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

The X-ray energy response of silicon. Part A. Theory

International Nuclear Information System (INIS)

Fraser, G.W.; Abbey, A.F.; Holland, A.; McCarthy, K.; Owens, A.; Wells, A.

1994-01-01

In this, the first part of a two-part study of the interaction of soft X-rays with silicon, motivated by the calibration requirements of CCD imaging spectrometers in astronomy, we describe a Monte Carlo model of X-ray energy loss whose products are the energy- and temperature-dependences of (i) W, the average energy required to create an electron-hole pair, and (ii) the Fano factor F. W and F have invariably been treated as material constants in previous analyses of Si X-ray detector performance. We show that in fact, at constant detector temperature T, W is an increasing function of X-ray energy for E -4 K -1 at a typical CCD operating temperature of 170 K. We discuss the practical implications of these results. Finally, we describe our separate calculations of the near-edge variation of CCD quantum detection efficiency arising from silicon K-shell Extended X-ray Absorption Fine Structure (EXAFS). ((orig.))

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

International Nuclear Information System (INIS)

Timokhov, D. F.; Timokhov, F. P.

2009-01-01

Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

Science.gov (United States)

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Interference coupling mechanisms in Silicon Strip Detectors - CMS tracker "wings" A learned lesson for SLHC

CERN Document Server

Arteche, F; Rivetta, C

2009-01-01

The identification of coupling mechanisms between noise sources and sensitive areas of the front-end electronics (FEE) in the previous CMS tracker sub-system is critical to optimize the design and integration of integrated circuits, sensors and power distribution circuitry for the proposed SLHC Silicon Strip Tracker systems. This paper presents a validated model of the noise sensitivity observed in the Silicon Strip Detector-FEE of the CMS tracker that allows quantifying both the impact of the noise coupling mechanisms and the system immunity against electromagnetic interferences. This model has been validated based on simulations using finite element models and immunity tests conducted on prototypes of the Silicon Tracker End-Caps (TEC) and Outer Barrel (TOB) systems. The results of these studies show important recommendations and criteria to be applied in the design of future detectors to increase the immunity against electromagnetic noise.

Silicon detectors operating beyond the LHC collider conditions: scenarios for radiation fields and detector degradation

International Nuclear Information System (INIS)

Lazanu, I.; Lazanu, S.

2004-01-01

Particle physics makes its greatest advances with experiments at the highest energies. The way to advance to a higher energy regime is through hadron colliders, or through non-accelerator experiments, as for example the space astroparticle missions. In the near future, the Large Hadron Collider (LHC) will be operational, and beyond that, its upgrades: the Super-LHC (SLHC) and the hypothetical Very Large Hadron Collider (VLHC). At the present time, there are no detailed studies for future accelerators, except those referring to LHC. For the new hadron collider LHC and some of its updates in luminosity and energy, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation of the silicon as material and for silicon detectors, during continuous radiation, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame of a phenomenological model developed previously by the authors and now extended to include new mechanisms, able to explain and give solutions to discrepancies between model predictions and detector behaviour after hadron irradiation. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation. (authors)

Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

Science.gov (United States)

Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

2018-02-01

Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

International Nuclear Information System (INIS)

Messina, M; Njuguna, J

2012-01-01

This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

International Nuclear Information System (INIS)

Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca; Wood, Barry

2014-01-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices. (paper)

Effects of synergetic and antagonistic additive elements on the thermal performance of engine oils at various bulk temperatures

International Nuclear Information System (INIS)

Abou-Ziyan, H.; Mahmoud, M.; Al-Ajmi, R.; Shedid, M.

2015-01-01

This paper reports effects of additive elements on thermal performance of engine oils during cooling of different engine parts at bulk temperatures from 40 to 150 °C and average wall superheat of 100 °C. The analysis is performed using a back propagation neural network that was trained on experimentally obtained sub-cooled boiling data of engine oils. The results demonstrate that sodium, boron, molybdenum, magnesium and barium additive elements are thermally synergetic while phosphorous, zinc, calcium and silicon elements are thermally antagonistic. Experimental thermal performance of oils could potentially be improved by increasing the concentration of synergetic additive elements or decreasing antagonistic additive elements concentration. - Highlights: • Oil additives enhance lubrication properties but may hinder oil thermal performance. • Sodium, boron, molybdenum, magnesium and barium additives enhance heat transfer. • Additives containing phosphorous, zinc, calcium and silicon hinder the heat transfer. • Oil thermal performance is improved by changing some oil additives concentrations. • Some additives are highly sensitive to interaction with other additives in the oil.

Comparison between phase shift derived and exactly calculated nucleon--nucleon interaction matrix elements

International Nuclear Information System (INIS)

Gregersen, A.W.

1977-01-01

A comparison is made between matrix elements calculated using the uncoupled channel Sussex approach to second order in DWBA and matrix elements calculated using a square well potential. The square well potential illustrated the problem of the determining parameter independence balanced with the concept of phase shift difference. The super-soft core potential was used to discuss the systematics of the Sussex approach as a function of angular momentum as well as the relation between Sussex generated and effective interaction matrix elements. In the uncoupled channels the original Sussex method of extracting effective interaction matrix elements was found to be satisfactory. In the coupled channels emphasis was placed upon the 3 S 1 -- 3 D 1 coupled channel matrix elements. Comparison is made between exactly calculated matrix elements, and matrix elements derived using an extended formulation of the coupled channel Sussex method. For simplicity the potential used is a nonseparable cut-off oscillator. The eigenphases of this potential can be made to approximate the realistic nucleon--nucleon phase shifts at low energies. By using the cut-off oscillator test potential, the original coupled channel Sussex method of determining parameter independence was shown to be incapable of accurately reproducing the exact cut-off oscillator matrix elements. The extended Sussex method was found to be accurate to within 10 percent. The extended method is based upon more general coupled channel DWBA and a noninfinite oscillator wave function solution to the cut-off oscillator auxiliary potential. A comparison is made in the coupled channels between matrix elements generated using the original Sussex method and the extended method. Tables of matrix elements generated using the original uncoupled channel Sussex method and the extended coupled channel Sussex method are presented for all necessary angular momentum channels

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Efficient generation of single and entangled photons on a silicon photonic integrated chip

International Nuclear Information System (INIS)

Mower, Jacob; Englund, Dirk

2011-01-01

We present a protocol for generating on-demand, indistinguishable single photons on a silicon photonic integrated chip. The source is a time-multiplexed spontaneous parametric down-conversion element that allows optimization of single-photon versus multiphoton emission while realizing high output rate and indistinguishability. We minimize both the scaling of active elements and the scaling of active element loss with multiplexing. We then discuss detection strategies and data processing to further optimize the procedure. We simulate an improvement in single-photon-generation efficiency over previous time-multiplexing protocols, assuming existing fabrication capabilities. We then apply this system to generate heralded Bell states. The generation efficiency of both nonclassical states could be increased substantially with improved fabrication procedures.

Extended Cognition: Feedback Loops and Coupled Systems

Directory of Open Access Journals (Sweden)

Olga Markic

2017-12-01

Full Text Available The article explores two waves of active externalism. I first introduce the distinction between passive and active externalism and analyse a proposal of active externalism based on the principle of parity proposed by Clark and Chalmers. There are two main obstacles, causal-constitution fallacy and cognitive bloat, that threaten the extended cognition hypothesis. The second wave of discussions based on the complementarity principle deals with cognitive systems with feedback loops between internal and external elements and is a more radical departure from functionalism and traditional thinking about cognition. I conclude with some remarks on potential ethical considerations of extended cognition.