Advancing MEMS Technology Usage through the MUMPS (Multi-User MEMS Processes) Program

Science.gov (United States)

Koester, D. A.; Markus, K. W.; Dhuler, V.; Mahadevan, R.; Cowen, A.

1995-01-01

In order to help provide access to advanced micro-electro-mechanical systems (MEMS) technologies and lower the barriers for both industry and academia, the Microelectronic Center of North Carolina (MCNC) and ARPA have developed a program which provides users with access to both MEMS processes and advanced electronic integration techniques. The four distinct aspects of this program, the multi-user MEMS processes (MUMP's), the consolidated micro-mechanical element library, smart MEMS, and the MEMS technology network are described in this paper. MUMP's is an ARPA-supported program created to provide inexpensive access to MEMS technology in a multi-user environment. It is both a proof-of-concept and educational tool that aids in the development of MEMS in the domestic community. MUMP's technologies currently include a 3-layer poly-silicon surface micromachining process and LIGA (lithography, electroforming, and injection molding) processes that provide reasonable design flexibility within set guidelines. The consolidated micromechanical element library (CaMEL) is a library of active and passive MEMS structures that can be downloaded by the MEMS community via the internet. Smart MEMS is the development of advanced electronics integration techniques for MEMS through the application of flip chip technology. The MEMS technology network (TechNet) is a menu of standard substrates and MEMS fabrication processes that can be purchased and combined to create unique process flows. TechNet provides the MEMS community greater flexibility and enhanced technology accessibility.

Digital reflection holography based systems development for MEMS testing

Science.gov (United States)

Singh, Vijay Raj; Liansheng, Sui; Asundi, Anand

2010-05-01

MEMS are tiny mechanical devices that are built onto semiconductor chips and are measured in micrometers and nanometers. Testing of MEMS device is an important part in carrying out their functional assessment and reliability analysis. Development of systems based on digital holography (DH) for MEMS inspection and characterization is presented in this paper. Two DH reflection systems, table-top and handheld types, are developed depending on the MEMS measurement requirements and their capabilities are presented. The methodologies for the systems are developed for 3D profile inspection and static & dynamic measurements, which is further integrated with in-house developed software that provides the measurement results in near real time. The applications of the developed systems are demonstrated for different MEMS devices for 3D profile inspection, static deformation/deflection measurements and vibration analysis. The developed systems are well suitable for the testing of MEMS and Microsystems samples, with full-field, static & dynamic inspection as well as to monitor micro-fabrication process.

Palladium transport in SiC

International Nuclear Information System (INIS)

Olivier, E.J.; Neethling, J.H.

2012-01-01

Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

Políticas Públicas de Memória O Programa Pontos de Memória no Contexto Sul-Rio-Grandense

Directory of Open Access Journals (Sweden)

Mariana Boujadi Mariano da Silva

2016-12-01

Full Text Available O presente estudo busca realizar uma análise do Programa Pontos de Memória, do Instituto Brasileiro de Museus. Analisando o Programa, observa-se a iniciativa de preservar a memória de determinados grupos sociais considerados excluídos da representação de museus ditos tradicionais, através da implementação de espaços de memória ou ações sociomuseológicas, que narrem suas histórias a partir do suporte de patrimônios locais. A análise parte de questionamentos iniciais: quais são as memórias e as identidades que o Programa seleciona para narrar, através de quais ferramentas ocorre a divulgação e sobretudo a apropriação deste patrimônio por parte da comunidade? Para analisar as causas e os efeitos desta política pública, o trabalho observará e discutirá o alcance e a influência que esses espaços exercem nas comunidades, as ações desenvolvidas e a longevidade desses espaços ou ações no contexto sul-rio-grandense.

High Temperature Memories in SiC Technology

OpenAIRE

Ekström, Mattias

2014-01-01

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

Palladium transport in SiC

Energy Technology Data Exchange (ETDEWEB)

Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2012-03-15

Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

Biomaterials for MEMS

CERN Document Server

Chiao, Mu

2011-01-01

This book serves as a guide for practicing engineers, researchers, and students interested in MEMS devices that use biomaterials and biomedical applications. It is also suitable for engineers and researchers interested in MEMS and its applications but who do not have the necessary background in biomaterials.Biomaterials for MEMS highlights important features and issues of biomaterials that have been used in MEMS and biomedical areas. Hence this book is an essential guide for MEMS engineers or researchers who are trained in engineering institutes that do not provide the background or knowledge

Enabling technology for MEMS and nanodevices

CERN Document Server

Baltes, Henry; Fedder, Gary K; Hierold, Christofer; Korvink, Jan G; Tabata, Osamu

2013-01-01

This softcover edition of the eponymous volume from the successful ""Advanced Micro & Nanosystems"" series covers all aspects of fabrication of MEMS under CMOS-compatible conditions from design to implementation.It examines the various routes and methods to combine electronics generated by the CMOS technology with novel micromechanical parts into one-chip solutions. Various approaches, fundamental and technological aspects as well as strategies leading to different types of functionalities and presented in detail.For the practicing engineer as well as MSc and PhD students on MEMS cours

Demonstration of SiC Pressure Sensors at 750 C

Science.gov (United States)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2014-01-01

We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

MEMS-based microspectrometer technologies for NIR and MIR wavelengths

International Nuclear Information System (INIS)

Schuler, Leo P; Milne, Jason S; Dell, John M; Faraone, Lorenzo

2009-01-01

Commercially manufactured near-infrared (NIR) instruments became available about 50 years ago. While they have been designed for laboratory use in a controlled environment and boast high performance, they are generally bulky, fragile and maintenance intensive, and therefore expensive to purchase and maintain. Micromachining is a powerful technique to fabricate micromechanical parts such as integrated circuits. It was perfected in the 1980s and led to the invention of micro electro mechanical systems (MEMSs). The three characteristic features of MEMS fabrication technologies are miniaturization, multiplicity and microelectronics. Combined, these features allow the batch production of compact and rugged devices with integrated intelligence. In order to build more compact, more rugged and less expensive NIR instruments, MEMS technology has been successfully integrated into a range of new devices. In the first part of this paper we discuss the UWA MEMS-based Fabry-Perot spectrometer, its design and issues to be solved. MEMS-based Fabry-Perot filters primarily isolate certain wavelengths by sweeping across an incident spectrum and the resulting monochromatic signal is detected by a broadband detector. In the second part, we discuss other microspectrometers including other Fabry-Perot spectrometer designs, time multiplexing devices and mixed time/space multiplexing devices. (topical review)

Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

Institute of Scientific and Technical Information of China (English)

蔡艳芝; 殷小玮; 尹洪峰

2015-01-01

The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

A Widely-Accessible Distributed MEMS Processing Environment. The MEMS Exchange Program

Science.gov (United States)

2012-10-29

all of these patterns in advance, we made a new cost model, called the Python Code cost model, which utilizes the power of a high level programming ...document entitled “The Beginners Guide to MEMS Processing” on the MEMSNet and MEMS Exchange The MEMS Exchange Program Final Technical Report October 29...from the Government is absolutely necessary. As said The MEMS Exchange Program Final Technical Report October 29, 2012 Page 57 of 58 before

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

Science.gov (United States)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding

Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program

Energy Technology Data Exchange (ETDEWEB)

Schriner, H.; Davies, B.; Sniegowski, J.; Rodgers, M.S.; Allen, J.; Shepard, C.

1998-05-01

Research and development in the design and manufacture of Microelectromechanical Systems (MEMS) is growing at an enormous rate. Advances in MEMS design tools and fabrication processes at Sandia National Laboratories` Microelectronics Development Laboratory (MDL) have broadened the scope of MEMS applications that can be designed and manufactured for both military and commercial use. As improvements in micromachining fabrication technologies continue to be made, MEMS designs can become more complex, thus opening the door to an even broader set of MEMS applications. In an effort to further research and development in MEMS design, fabrication, and application, Sandia National Laboratories has launched the Sandia Agile MEMS Prototyping, Layout Tools, Education and Services Program or SAMPLES program. The SAMPLES program offers potential partners interested in MEMS the opportunity to prototype an idea and produce hardware that can be used to sell a concept. The SAMPLES program provides education and training on Sandia`s design tools, analysis tools and fabrication process. New designers can participate in the SAMPLES program and design MEMS devices using Sandia`s design and analysis tools. As part of the SAMPLES program, participants` designs are fabricated using Sandia`s 4 level polycrystalline silicon surface micromachine technology fabrication process known as SUMMiT (Sandia Ultra-planar, Multi-level MEMS Technology). Furthermore, SAMPLES participants can also opt to obtain state of the art, post-fabrication services provided at Sandia such as release, packaging, reliability characterization, and failure analysis. This paper discusses the components of the SAMPLES program.

Estudio de la protección del refuerzo de partículas de SiC mediante barreras activas por sol-gel en materiales compuestos de matriz de aluminio

Directory of Open Access Journals (Sweden)

Ureña, A.

2004-04-01

Full Text Available A microcrystalline, homogeneous and transparent sol – gel silica coating has been developed to avoid the degradation and improve the wettability of aluminium matrix composites reinforced with SiC particles. Composite aluminium matrix samples have been made by cold powder compaction, and the coating efficiency has been checked by melting the samples several temperature and times. The coating reduces the appearance of Al4C3, showing that the degradation resistance of the new material is much higher than that of the uncovered SiC particles composite one.

Con objeto de prevenir la degradación y mejorar la mojabilidad de los materiales compuestos de matriz de aluminio reforzados con partículas de SiC se ha desarrollado un recubrimiento microcristalino, homogéneo y transparente de SiO2 obtenido por el método sol-gel. La eficacia del recubrimiento como barrera se ha comprobado realizando ensayos de fusión a diferentes tiempos y temperaturas sobre pastillas de material compuesto de matriz de aluminio obtenidas por compactación en frío de polvos. El recubrimiento limita la formación de Al4C3, lo que indica que la resistencia a la degradación del nuevo material es muy superior a la del fabricado con partículas de SiC sin recubrir.

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

EDITORIAL: International MEMS Conference 2006

Science.gov (United States)

Tay, Francis E. H.; Jianmin, Miao; Iliescu, Ciprian

2006-04-01

The International MEMS conference (iMEMS2006) organized by the Institute of Bioengineering and Nanotechnology and Nanyang Technological University aims to provide a platform for academicians, professionals and industrialists in various related fields from all over the world to share and learn from each other. Of great interest is the incorporation of the theme of life sciences application using MEMS. It is the desire of this conference to initiate collaboration and form network of cooperation. This has continued to be the objective of iMEMS since its inception in 1997. The technological advance of MEMS over the past few decades has been truly exciting in terms of development and applications. In order to participate in this rapid development, a conference involving delegates from within the MEMS community and outside the community is very meaningful and timely. With the receipt of over 200 articles, delegates related to MEMS field from all over the world will share their perspectives on topics such as MEMS/MST Design, MEMS Teaching and Education, MEMS/MST Packaging, MEMS/MST Fabrication, Microsystems Applications, System Integration, Wearable Devices, MEMSWear and BioMEMS. Invited speakers and delegates from outside the field have also been involved to provide challenges, especially in the life sciences field, for the MEMS community to potentially address. The proceedings of the conference will be published as an issue in the online Journal of Physics: Conference Series and this can reach a wider audience and will facilitate the reference and citation of the work presented in the conference. We wish to express our deep gratitude to the International Scientific Committee members and the organizing committee members for contributing to the success of this conference. We would like to thank all the delegates, speakers and sponsors from all over the world for presenting and sharing their perspectives on topics related to MEMS and the challenges that MEMS can

Modeling Impact-induced Failure of Polysilicon MEMS: A Multi-scale Approach.

Science.gov (United States)

Mariani, Stefano; Ghisi, Aldo; Corigliano, Alberto; Zerbini, Sarah

2009-01-01

Failure of packaged polysilicon micro-electro-mechanical systems (MEMS) subjected to impacts involves phenomena occurring at several length-scales. In this paper we present a multi-scale finite element approach to properly allow for: (i) the propagation of stress waves inside the package; (ii) the dynamics of the whole MEMS; (iii) the spreading of micro-cracking in the failing part(s) of the sensor. Through Monte Carlo simulations, some effects of polysilicon micro-structure on the failure mode are elucidated.

Advanced Mechatronics and MEMS Devices

CERN Document Server

2013-01-01

Advanced Mechatronics and MEMS Devicesdescribes state-of-the-art MEMS devices and introduces the latest technology in electrical and mechanical microsystems. The evolution of design in microfabrication, as well as emerging issues in nanomaterials, micromachining, micromanufacturing and microassembly are all discussed at length in this volume. Advanced Mechatronics also provides a reader with knowledge of MEMS sensors array, MEMS multidimensional accelerometer, artificial skin with imbedded tactile components, as well as other topics in MEMS sensors and transducers. The book also presents a number of topics in advanced robotics and an abundance of applications of MEMS in robotics, like reconfigurable modular snake robots, magnetic MEMS robots for drug delivery and flying robots with adjustable wings, to name a few. This book also: Covers the fundamentals of advanced mechatronics and MEMS devices while also presenting new state-of-the-art methodology and technology used in the application of these devices Prese...

Some Design Considerations on the Electrostatically Actuated Fixed-Fixed End Type MEMS Switches

International Nuclear Information System (INIS)

Sadeghian, Hamed; Rezazadeh, Ghader; Sani, Ebrahim Abbaspour

2006-01-01

The nonlinear electrostatic pull-in behaviour of MEMS Switches in micro-electromechanical systems (MEMS) is investigated in this article. We used the distributed model when the electrostatic pressure didn't apply at the whole of the beam and applied only in the mid-part of the beam. In this part the electrostatic area is different from two other parts. The model uses Euler-Bernoulli beam theory for fixed-fixed end type beams. The finite difference method was used to solve the nonlinear equation. The proposed model includes the fringing effects of the electrical field, residual stress and varying electrostatic area effects. The numerical results reveal that the profile deflection of the MEMS Switch may not only influence the distribution of the electrostatic force but also considerably change the nonlinear pull-in voltage

Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

International Nuclear Information System (INIS)

Lee, J.K.; Lee, S.P.; Byun, J.H.

2010-01-01

The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

Science.gov (United States)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Thin Film Transistor Control Circuitry for MEMS Acoustic Transducers

Science.gov (United States)

Daugherty, Robin

This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10-100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.

Converting MEMS technology into profits

Science.gov (United States)

Bryzek, Janusz

1998-08-01

This paper discusses issues related to transitioning a company from the advanced technology development phase (with a particular focus on MEMS) to a profitable business, with emphasis on start-up companies. It includes several case studies from (primarily) NovaSensor MEMS development history. These case studies illustrate strategic problems with which advanced MEMS technology developers have to be concerned. Conclusions from these case studies could be used as checkpoints for future MEMS developers to increase probability of profitable operations. The objective for this paper is to share the author's experience from multiple MEMS start-ups to accelerate development of the MEMS market by focusing state- of-the-art technologists on marketing issues.

Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

International Nuclear Information System (INIS)

El-Azab, A.; Ghoniem, N.M.

1994-01-01

Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

Effect of Reactant Concentration on the Microstructure of SiC Nano wires Grown In Situ within SiC Fiber Preforms

International Nuclear Information System (INIS)

Kim, Weon Ju; Kang, Seok Min; Park, Ji Yeon; Ryu, Woo Seog

2006-01-01

Silicon carbide fiber-reinforced silicon carbide matrix (SiC f /SiC) composites are considered as advanced materials for control rods and other in-core components of high-temperature gas cooled reactors. Although the carbon fiber-reinforced carbon matrix (C f /C) composites are more mature and have advantages in cost, manufacturability and some thermomechanical properties, the SiC f /SiC composites have a clear advantage in irradiation stability, specifically a lower level of swelling and retention of mechanical properties. This offers a lifetime component for control rod application to HTGRs while the Cf/C composites would require 2-3 replacements over the reactor lifetime. In general, the chemical vapor infiltration (CVI) technique has been used most widely to produce SiC f /SiC composites. Although the technique produces a highly pure SiC matrix, it requires a long processing time and inevitably contains large interbundle pores. The present authors have recently developed 'whisker growing-assisted process,' in which one-dimensional SiC nano structures with high aspect ratios such as whiskers, nano wires and nano rods are introduced into the fiber preform before the matrix infiltration step. This novel method can produce SiC f /SiC composites with a lower porosity and an uniform distribution of pores when compared with the conventional CVI. This would be expected to increase mechanical and thermal properties of the SiC f /SiC composites. In order to take full advantage of the whisker growing strategy, however, a homogeneous growth of long whiskers is required. In this study, we applied the atmospheric pressure CVI process without metallic catalysts for the growth of SiC nano wires within stacked SiC fiber fabrics. We focused on the effect of the concentration of a reactant gas on the growth behavior and microstructures of the SiC nano wires and discussed a controlling condition for the homogenous growth of long SiC nano wires

SIC Industriemonitor najaar 2003

NARCIS (Netherlands)

Brouwer, N.; de Nooij, M.; Pomp, M.

2003-01-01

In juni 2000 publiceerde de Stichting voor Economisch Onderzoek (SEO) van de Universiteit van Amsterdam in opdracht van Stichting voor Industriebeleid en Communicatie (SIC) een ontwerp voor een SIC industriemonitor met een voorstel voor de inhoud en de structuur van een dergelijke monitor. Op dat

Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

International Nuclear Information System (INIS)

Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

2011-01-01

Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

Science.gov (United States)

Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

2008-02-01

We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

SIC POVMs and Clifford groups in prime dimensions

International Nuclear Information System (INIS)

Zhu Huangjun

2010-01-01

We show that in prime dimensions not equal to 3, each group covariant symmetric informationally complete positive operator valued measure (SIC POVM) is covariant with respect to a unique Heisenberg-Weyl (HW) group. Moreover, the symmetry group of the SIC POVM is a subgroup of the Clifford group. Hence, two SIC POVMs covariant with respect to the HW group are unitarily or antiunitarily equivalent if and only if they are on the same orbit of the extended Clifford group. In dimension 3, each group covariant SIC POVM may be covariant with respect to three or nine HW groups, and the symmetry group of the SIC POVM is a subgroup of at least one of the Clifford groups of these HW groups, respectively. There may exist two or three orbits of equivalent SIC POVMs for each group covariant SIC POVM, depending on the order of its symmetry group. We then establish a complete equivalence relation among group covariant SIC POVMs in dimension 3, and classify inequivalent ones according to the geometric phases associated with fiducial vectors. Finally, we uncover additional SIC POVMs by regrouping of the fiducial vectors from different SIC POVMs which may or may not be on the same orbit of the extended Clifford group.

Ultra-compact MEMS FTIR spectrometer

Science.gov (United States)

Sabry, Yasser M.; Hassan, Khaled; Anwar, Momen; Alharon, Mohamed H.; Medhat, Mostafa; Adib, George A.; Dumont, Rich; Saadany, Bassam; Khalil, Diaa

2017-05-01

Portable and handheld spectrometers are being developed and commercialized in the late few years leveraging the rapidly-progressing technology and triggering new markets in the field of on-site spectroscopic analysis. Although handheld devices were commercialized for the near-infrared spectroscopy (NIRS), their size and cost stand as an obstacle against the deployment of the spectrometer as spectral sensing components needed for the smart phone industry and the IoT applications. In this work we report a chip-sized microelectromechanical system (MEMS)-based FTIR spectrometer. The core optical engine of the solution is built using a passive-alignment integration technique for a selfaligned MEMS chip; self-aligned microoptics and a single detector in a tiny package sized about 1 cm3. The MEMS chip is a monolithic, high-throughput scanning Michelson interferometer fabricated using deep reactive ion etching technology of silicon-on-insulator substrate. The micro-optical part is used for conditioning the input/output light to/from the MEMS and for further light direction to the detector. Thanks to the all-reflective design of the conditioning microoptics, the performance is free of chromatic aberration. Complemented by the excellent transmission properties of the silicon in the infrared region, the integrated solution allows very wide spectral range of operation. The reported sensor's spectral resolution is about 33 cm-1 and working in the range of 1270 nm to 2700 nm; upper limited by the extended InGaAs detector. The presented solution provides a low cost, low power, tiny size, wide wavelength range NIR spectral sensor that can be manufactured with extremely high volumes. All these features promise the compatibility of this technology with the forthcoming demand of smart portable and IoT devices.

MEMS Reliability Assurance Activities at JPL

Science.gov (United States)

Kayali, S.; Lawton, R.; Stark, B.

2000-01-01

An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.

Research on SiC Whisker Prepared by H-PSO

Directory of Open Access Journals (Sweden)

WANG Yao

2017-10-01

Full Text Available SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid growth mechanism.

Challenges in the Packaging of MEMS

Energy Technology Data Exchange (ETDEWEB)

Malshe, A.P.; Singh, S.B.; Eaton, W.P.; O' Neal, C.; Brown, W.D.; Miller, W.M.

1999-03-26

The packaging of Micro-Electro-Mechanical Systems (MEMS) is a field of great importance to anyone using or manufacturing sensors, consumer products, or military applications. Currently much work has been done in the design and fabrication of MEMS devices but insufficient research and few publications have been completed on the packaging of these devices. This is despite the fact that packaging is a very large percentage of the total cost of MEMS devices. The main difference between IC packaging and MEMS packaging is that MEMS packaging is almost always application specific and greatly affected by its environment and packaging techniques such as die handling, die attach processes, and lid sealing. Many of these aspects are directly related to the materials used in the packaging processes. MEMS devices that are functional in wafer form can be rendered inoperable after packaging. MEMS dies must be handled only from the chip sides so features on the top surface are not damaged. This eliminates most current die pick-and-place fixtures. Die attach materials are key to MEMS packaging. Using hard die attach solders can create high stresses in the MEMS devices, which can affect their operation greatly. Low-stress epoxies can be high-outgassing, which can also affect device performance. Also, a low modulus die attach can allow the die to move during ultrasonic wirebonding resulting to low wirebond strength. Another source of residual stress is the lid sealing process. Most MEMS based sensors and devices require a hermetically sealed package. This can be done by parallel seam welding the package lid, but at the cost of further induced stress on the die. Another issue of MEMS packaging is the media compatibility of the packaged device. MEMS unlike ICS often interface with their environment, which could be high pressure or corrosive. The main conclusion we can draw about MEMS packaging is that the package affects the performance and reliability of the MEMS devices. There is a

ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

Science.gov (United States)

Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

2016-11-01

This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

Science.gov (United States)

Ning, X. J.; Pirouz, P.; Bhatt, R. T.

1992-01-01

The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

Pd/CeO2/SiC Chemical Sensors

Science.gov (United States)

Lu, Weijie; Collins, W. Eugene

2005-01-01

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky

Optical inspection of hidden MEMS structures

Science.gov (United States)

Krauter, Johann; Gronle, Marc; Osten, Wolfgang

2017-06-01

Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

International Nuclear Information System (INIS)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-01-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

Memória Afetiva e Memória Histórica nas Crônicas de Rubem Braga

Directory of Open Access Journals (Sweden)

Priscila Rosa Martins

2016-02-01

Full Text Available Consagrado pela escrita da crônica, pela qual se tornou referência do gênero no Brasil, Rubem Braga ocupou grande parte de sua vida registrando o cotidiano. Este trabalho apresenta uma leitura de sete crônicas do escritor que retratam cenas da cidade. Com respaldo nos textos “Culturas híbridas, poderes oblíquos”, de Néstor García Canclini (2008, e “Tempo e Espaço”, de Zygmunt Bauman (2001, trazemos alguns questionamentos provindos dos estudos acerca da pós-modernidade, no que diz respeito à abordagem do espaço público, para propor uma diferenciação entre memória histórica e memória afetiva na obra de Braga.

Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

Energy Technology Data Exchange (ETDEWEB)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-11-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

Additive direct-write microfabrication for MEMS: A review

Science.gov (United States)

Teh, Kwok Siong

2017-12-01

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer- generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the maker movement. The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into threedimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive

Laser-heating wire bonding on MEMS packaging

Directory of Open Access Journals (Sweden)

Yuetao Liu

2014-02-01

Full Text Available Making connections is critical in fabrication of MEMS (Micro-Electro-Mechanical Systems. It is also complicated, because the temperature during joining affects both the bond produced and the structure and mechanical properties of the moving parts of the device. Specifications for MEMS packaging require that the temperature not exceed 240 °C. However, usually, temperatures can reach up to 300 °C during conventional thermosonic wire bonding. Such a temperature will change the distribution of dopants in CMOS (Complementary Metal Oxide Semiconductor circuits. In this paper we propose a new heating process. A semiconductor laser (wavelength 808 nm is suggested as the thermal source for wire bonding. The thermal field of this setup was analyzed, and specific mathematical models of the field were built. Experimental results show that the heating can be focused on the bonding pad, and that much lower heat conduction occurs, compared with that during the normal heating method. The bond strength increases with increasing laser power. The bond strengths obtained with laser heating are slightly lower than those obtained with the normal heating method, but can still meet the strength requirements for MEMS.

MEMS fluidic actuator

Science.gov (United States)

Kholwadwala, Deepesh K [Albuquerque, NM; Johnston, Gabriel A [Trophy Club, TX; Rohrer, Brandon R [Albuquerque, NM; Galambos, Paul C [Albuquerque, NM; Okandan, Murat [Albuquerque, NM

2007-07-24

The present invention comprises a novel, lightweight, massively parallel device comprising microelectromechanical (MEMS) fluidic actuators, to reconfigure the profile, of a surface. Each microfluidic actuator comprises an independent bladder that can act as both a sensor and an actuator. A MEMS sensor, and a MEMS valve within each microfluidic actuator, operate cooperatively to monitor the fluid within each bladder, and regulate the flow of the fluid entering and exiting each bladder. When adjacently spaced in a array, microfluidic actuators can create arbitrary surface profiles in response to a change in the operating environment of the surface. In an embodiment of the invention, the profile of an airfoil is controlled by independent extension and contraction of a plurality of actuators, that operate to displace a compliant cover.

MEMS cost analysis from laboratory to industry

CERN Document Server

Freng, Ron Lawes

2016-01-01

The World of MEMS; Chapter 2: Basic Fabrication Processes; Chapter 3: Surface Microengineering. High Aspect Ratio Microengineering; Chapter 5: MEMS Testing; Chapter 6: MEMS Packaging. Clean Rooms, Buildings and Plant; Chapter 8: The MEMSCOST Spreadsheet; Chapter 9: Product Costs - Accelerometers. Product Costs - Microphones. MEMS Foundries. Financial Reporting and Analysis. Conclusions.

Matrix densification of SiC composites by sintering process

International Nuclear Information System (INIS)

Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

2007-02-01

The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

Improved thermoelectric performance of CdO by adding SiC fibers versus by adding SiC nanoparticles inclusions

Science.gov (United States)

Liang, S.; Li, Longjiang

2018-03-01

We report the improved thermoelectric (TE) performance of CdO by alloying with SiC fibers. In contrast to the lowered thermoelectric figure of merit (ZT) in a CdO matrix with SiC nanoparticle composites, an appreciable ZT value increment of about 36% (from 0.32 to 0.435) at 1000 K was obtained in the CdO matrix with SiC fiber composites. Both kinds of composites show substantially decreased thermal conductivity due to additional phonon scattering by the nano-inclusions. Compared to the very high electrical resistivity (ρ ˜ 140 μΩ m) for 5 at. % SiC nanoparticle composites, SiC fiber composites favorably maintained a very low ρ (˜30 μΩ m) even with 5 at. % SiC at 1000 K. We think the substantial difference of specific surface areas of these two nano-inclusions (30 m2/g for fibers vs 300 m2/g for nanoparticles) might play a crucial role to fine tune the TE performance. Larger interface could be inductive to diffusion and electron acceptor activation, which affect carrier mobility considerably. This work might hint at an alternative approach to improve TE materials' performance.

Modeling nonlinearities in MEMS oscillators.

Science.gov (United States)

Agrawal, Deepak K; Woodhouse, Jim; Seshia, Ashwin A

2013-08-01

We present a mathematical model of a microelectromechanical system (MEMS) oscillator that integrates the nonlinearities of the MEMS resonator and the oscillator circuitry in a single numerical modeling environment. This is achieved by transforming the conventional nonlinear mechanical model into the electrical domain while simultaneously considering the prominent nonlinearities of the resonator. The proposed nonlinear electrical model is validated by comparing the simulated amplitude-frequency response with measurements on an open-loop electrically addressed flexural silicon MEMS resonator driven to large motional amplitudes. Next, the essential nonlinearities in the oscillator circuit are investigated and a mathematical model of a MEMS oscillator is proposed that integrates the nonlinearities of the resonator. The concept is illustrated for MEMS transimpedance-amplifier- based square-wave and sine-wave oscillators. Closed-form expressions of steady-state output power and output frequency are derived for both oscillator models and compared with experimental and simulation results, with a good match in the predicted trends in all three cases.

A Teaching - Learning Framework for MEMS Education

International Nuclear Information System (INIS)

Sheeparamatti, B G; Angadi, S A; Sheeparamatti, R B; Kadadevaramath, J S

2006-01-01

Micro-Electro-Mechanical Systems (MEMS) technology has been identified as one of the most promising technologies in the 21st century. MEMS technology has opened up a wide array of unforeseen applications. Hence it is necessary to train the technocrats of tomorrow in this emerging field to meet the industrial/societal demands. The drive behind fostering of MEMS technology is the reduction in the cost, size, weight, and power consumption of the sensors, actuators, and associated electronics. MEMS is a multidisciplinary engineering and basic science area which includes electrical engineering, mechanical engineering, material science and biomedical engineering. Hence MEMS education needs a special approach to prepare the technocrats for a career in MEMS. The modern education methodology using computer based training systems (CBTS) with embedded modeling and simulation tools will help in this direction. The availability of computer based learning resources such as MATLAB, ANSYS/Multiphysics and rapid prototyping tools have contributed to proposition of an efficient teaching-learning framework for MEMS education presented in this paper. This paper proposes a conceptual framework for teaching/learning MEMS in the current technical education scenario

Micro electromechanical systems (MEMS) for mechanical engineers

Energy Technology Data Exchange (ETDEWEB)

Lee, A. P., LLNL

1996-11-18

The ongoing advances in Microelectromechanical Systems (MEMS) are providing man-kind the freedom to travel to dimensional spaces never before conceivable. Advances include new fabrication processes, new materials, tailored modeling tools, new fabrication machines, systems integration, and more detailed studies of physics and surface chemistry as applied to the micro scale. In the ten years since its inauguration, MEMS technology is penetrating industries of automobile, healthcare, biotechnology, sports/entertainment, measurement systems, data storage, photonics/optics, computer, aerospace, precision instruments/robotics, and environment monitoring. It is projected that by the turn of the century, MEMS will impact every individual in the industrial world, totaling sales up to $14 billion (source: System Planning Corp.). MEMS programs in major universities have spawned up all over the United States, preparing the brain-power and expertise for the next wave of MEMS breakthroughs. It should be pointed out that although MEMS has been initiated by electrical engineering researchers through the involvement of IC fabrication techniques, today it has evolved such that it requires a totally multi-disciplinary team to develop useful devices. Mechanical engineers are especially crucial to the success of MEMS development, since 90% of the physical realm involved is mechanical. Mechanical engineers are needed for the design of MEMS, the analysis of the mechanical system, the design of testing apparatus, the implementation of analytical tools, and the packaging process. Every single aspect of mechanical engineering is being utilized in the MEMS field today, however, the impact could be more substantial if more mechanical engineers are involved in the systems level designing. In this paper, an attempt is made to create the pathways for a mechanical engineer to enter in the MEMS field. Examples of application in optics and medical devices will be used to illustrate how mechanical

European MEMS foundries

Science.gov (United States)

Salomon, Patric R.

2003-01-01

According to the latest release of the NEXUS market study, the market for MEMS or Microsystems Technology (MST) is predicted to grow to $68B by the year 2005, with systems containing these components generating even higher revenues and growth. The latest advances in MST/MEMS technology have enabled the design of a new generation of microsystems that are smaller, cheaper, more reliable, and consume less power. These integrated systems bring together numerous analog/mixed signal microelectronics blocks and MEMS functions on a single chip or on two or more chips assembled within an integrated package. In spite of all these advances in technology and manufacturing, a system manufacturer either faces a substantial up-front R&D investment to create his own infrastructure and expertise, or he can use design and foundry services to get the initial product into the marketplace fast and with an affordable investment. Once he has a viable product, he can still think about his own manufacturing efforts and investments to obtain an optimized high volume manufacturing for the specific product. One of the barriers to successful exploitation of MEMS/MST technology has been the lack of access to industrial foundries capable of producing certified microsystems devices in commercial quantities, including packaging and test. This paper discusses Multi-project wafer (MPW) runs, requirements for foundries and gives some examples of foundry business models. Furthermore, this paper will give an overview on MST/MEMS services that are available in Europe, including pure commercial activities, European project activities (e.g. Europractice), and some academic services.

MEMS linear and nonlinear statics and dynamics

CERN Document Server

Younis, Mohammad I

2011-01-01

MEMS Linear and Nonlinear Statics and Dynamics presents the necessary analytical and computational tools for MEMS designers to model and simulate most known MEMS devices, structures, and phenomena. This book also provides an in-depth analysis and treatment of the most common static and dynamic phenomena in MEMS that are encountered by engineers. Coverage also includes nonlinear modeling approaches to modeling various MEMS phenomena of a nonlinear nature, such as those due to electrostatic forces, squeeze-film damping, and large deflection of structures. The book also: Includes examples of nume

Preparation of SiC Compacts by the Rapid Proto typing Machine

International Nuclear Information System (INIS)

Abdelrahman, A.A.M.; Ahmed, A.Z.; Elmasry, M.A.A.

2008-01-01

The preparation of ceramic green bodies from powders by the rapid proto typing is a promising technique. In this work SiC green bodies were prepared from black SiC powder mixed with 10 wt % organic binder namely Ave be SP G20 starch. Different liquid binders were investigated and were successful in producing strong green bodies such as NH 4 OH in the ph range 9-10 or 1 % HCl solution in water and or a mixture of 1% NH 4 Cl and NH 4 OH in the ph range of 8.5 to 9. The green bodies were then preheated at 200 degree C to eliminate the starch by thermal decomposition. After that these parts were infiltrated using molten silicon at 1450 degree C in Argon atmosphere. Unfortunately it was impossible to infiltrate the green bodies using liquid silicon. Another technique was followed which is dipping of the green bodies in liquid silicon. This method was successful. The densities of the green and dipped bodies were determined and they were examined under the metallo graph and SEM. It was found that no SiC dissolved in the silicon after dipping. This was concluded from the presence of sharp corners of SiC grains

Surface chemistry and tribology of MEMS.

Science.gov (United States)

Maboudian, Roya; Carraro, Carlo

2004-01-01

The microscopic length scale and high surface-to-volume ratio, characteristic of microelectro-mechanical systems (MEMS), dictate that surface properties are of paramount importance. This review deals with the effects of surface chemical treatments on tribological properties (adhesion, friction, and wear) of MEMS devices. After a brief review of materials and processes that are utilized in MEMS technology, the relevant tribological and chemical issues are discussed. Various MEMS microinstruments are discussed, which are commonly employed to perform adhesion, friction, and wear measurements. The effects of different surface treatments on the reported tribological properties are discussed.

Effect of inclusion of SiC particulates on the mechanical resistance behaviour of stir-cast AA6063/SiC composites

International Nuclear Information System (INIS)

Balasubramanian, I.; Maheswaran, R.

2015-01-01

Highlights: • AA6063/SiC composites with different weight percent are stir cast. • Resistance properties against indentation, stretching force and sliding force are studied. • Increase in initiation of cleavage facets and reduces the tensile strength for 15% SiC. • Transition from micro ploughing to micro cutting wear mechanism is less due to SiC inclusion. - Abstract: This study investigates the mechanical resistance behaviour of AA6063 particulate composites with the inclusion of micron-sized silicon carbide (SiC) particles with different weight percentages in an AA6063 aluminium matrix. AA6063/SiC particulate composites containing 0, 5, 10, and 15 weight percent of SiC particles were produced by stir casting. Standard mechanical tests were conducted on the composite plates, and the mechanical resistance to indentation, tensile force and sliding force are evaluated. It has been observed that upon addition of SiC particles, the resistance against indentation is increased and the resistance against tensile force is initially increased and then decreased. Furthermore, using scanning electron microscopy (SEM), the fracture appearance of the broken specimen subjected to tensile force and morphological changes in the surface subjected to sliding force are analysed. The SEM images reveal that the addition of SiC particles in the AA6063 aluminium matrix initiates more cleavage facets. This leads to brittle fracture in the specimen subjected to tensile forces and less transition from material displacement to material removal in the specimen subjected to sliding forces

Palladium assisted silver transport in polycrystalline SiC

Energy Technology Data Exchange (ETDEWEB)

Neethling, J.H., E-mail: Jan.Neethling@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); O' Connell, J.H.; Olivier, E.J. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-10-15

The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd-Ag compound at temperatures of 800 and 1000 Degree-Sign C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC-SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag-Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag-Pd compound if present at the IPyC-SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

Palladium assisted silver transport in polycrystalline SiC

International Nuclear Information System (INIS)

Neethling, J.H.; O’Connell, J.H.; Olivier, E.J.

2012-01-01

The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd–Ag compound at temperatures of 800 and 1000 °C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC–SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag–Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag–Pd compound if present at the IPyC–SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

Electrostatic MEMS devices with high reliability

Science.gov (United States)

Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

2015-02-24

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

NARCIS (Netherlands)

van Essen, M.C.

2009-01-01

Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently

Integrated design of MEMS

DEFF Research Database (Denmark)

De Grave, Arnaud; Brissaud, Daniel

2007-01-01

Emerging technologies of Micro-Electromechanical Systems (MEMS) are applications such as airbag accelerometers. Micro-products present many physical differences from macro-products. Moreover, there is a high level of integration in multiple fields of physics with strongly coupled effects...... industrial immersion to propose a socio-technological description of the design process and MEMS design tools....

O conceito de memória na obra freudiana: Breves explanações

Directory of Open Access Journals (Sweden)

Pamela Pitagoras Freitas Lima Ferrarini

2014-08-01

Full Text Available O presente artigo tem como objetivo descrever o conceito de memória na obra de Sigmund Freud, precursor da Psicanálise. O tema da memória e suas diferentes manifestações no psiquismo faziam parte das inquietações teóricas de Freud, levando a indagar a respeito do funcionamento desta em seus diversos escritos. Através da análise da obra freudiana e de demais teóricos que debateram a respeito do tema, este estudo teórico visa demonstrar que a memória, na Psicanálise, sempre esteve presente na formulação freudiana da subjetividade humana. A constante evolução da sua teoria permitiu que a memória ganhasse um status cada vez maior, passando de uma análise puramente individual e funcional, para uma dimensão social e cultural, transformando-se num dos alicerces de sua teoria.

Simulations of Proton Implantation in Silicon Carbide (SiC)

Science.gov (United States)

2016-03-31

Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

Science.gov (United States)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Piezoelectric MEMS resonators

CERN Document Server

Piazza, Gianluca

2017-01-01

This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associate...

Anodization Mechanism on SiC Nanoparticle Reinforced Al Matrix Composites Produced by Power Metallurgy.

Science.gov (United States)

Ferreira, Sonia C; Conde, Ana; Arenas, María A; Rocha, Luis A; Velhinho, Alexandre

2014-12-19

Specimens of aluminum-based composites reinforced by silicon carbide nanoparticles (Al/SiC np ) produced by powder metallurgy (PM) were anodized under voltage control in tartaric-sulfuric acid (TSA). In this work, the influence of the amount of SiC np on the film growth during anodizing was investigated. The current density versus time response and the morphology of the porous alumina film formed at the composite surface are compared to those concerning a commercial aluminum alloy (AA1050) anodized under the same conditions. The processing method of the aluminum alloys influences the efficiency of the anodizing process, leading to a lower thicknesses for the unreinforced Al-PM alloy regarding the AA1050. The current density versus time response is strongly dependent on the amount of SiC np . The current peaks and the steady-state current density recorded at each voltage step increases with the SiC np volume fraction due to the oxidation of the SiC np . The formation mechanism of the anodic film on Al/SiC np composites is different from that occurring in AA1050, partly due the heterogeneous distribution of the reinforcement particles in the metallic matrix, but also to the entrapment of SiC np in the anodic film.

Adaptive Sliding Mode Control of MEMS AC Voltage Reference Source

Directory of Open Access Journals (Sweden)

Ehsan Ranjbar

2017-01-01

Full Text Available The accuracy of physical parameters of a tunable MEMS capacitor, as the major part of MEMS AC voltage reference, is of great importance to achieve an accurate output voltage free of the malfunctioning noise and disturbance. Even though strenuous endeavors are made to fabricate MEMS tunable capacitors with desiderated accurate physical characteristics and ameliorate exactness of physical parameters’ values, parametric uncertainties ineluctably emerge in fabrication process attributable to imperfections in micromachining process. First off, this paper considers applying an adaptive sliding mode controller design in the MEMS AC voltage reference source so that it is capable of giving off a well-regulated output voltage in defiance of jumbling parametric uncertainties in the plant dynamics and also aggravating external disturbance imposed on the system. Secondly, it puts an investigatory comparison with the designed model reference adaptive controller and the pole-placement state feedback one into one’s prospective. Not only does the tuned adaptive sliding mode controller show remarkable robustness against slow parameter variation and external disturbance being compared to the pole-placement state feedback one, but also it immensely gets robust against the external disturbance in comparison with the conventional adaptive controller. The simulation results are promising.

PhySIC_IST: cleaning source trees to infer more informative supertrees.

Science.gov (United States)

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel J P; Ranwez, Vincent

2008-10-04

Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter.Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative

Adhesion aspects in MEMS/NEMS

CERN Document Server

Kim, Seong H; Mittal, Kash L

2012-01-01

Phenomena associated with the adhesion interaction of surfaces have been a critical aspect of micro- and nanosystem development and performance since the first MicroElectroMechanicalSystems(MEMS) were fabricated. These phenomena are ubiquitous in nature and are present in all systems, however MEMS devices are particularly sensitive to their effects owing to their small size and limited actuation force that can be generated. Extension of MEMS technology concepts to the nanoscale and development of NanoElectroMechanicalSystems(NEMS) will result in systems even more strongly influenced by surface

Practical guide to RF-MEMS

CERN Document Server

Iannacci, Jacopo

2013-01-01

Closes the gap between hardcore-theoretical and purely experimental RF-MEMS books. The book covers, from a practical viewpoint, the most critical steps that have to be taken in order to develop novel RF-MEMS device concepts. Prototypical RF-MEMS devices, both including lumped components and complex networks, are presented at the beginning of the book as reference examples, and these are then discussed from different perspectives with regard to design, simulation, packaging, testing, and post-fabrication modeling. Theoretical concepts are introduced when necessary to complement the practical

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa

2015-05-18

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Carbon microelectromechanical systems (C-MEMS) based microsupercapacitors

KAUST Repository

Agrawal, Richa; Beidaghi, Majid; Chen, Wei; Wang, Chunlei

2015-01-01

The rapid development in miniaturized electronic devices has led to an ever increasing demand for high-performance rechargeable micropower scources. Microsupercapacitors in particular have gained much attention in recent years owing to their ability to provide high pulse power while maintaining long cycle lives. Carbon microelectromechanical systems (C-MEMS) is a powerful approach to fabricate high aspect ratio carbon microelectrode arrays, which has been proved to hold great promise as a platform for energy storage. C-MEMS is a versatile technique to create carbon structures by pyrolyzing a patterned photoresist. Furthermore, different active materials can be loaded onto these microelectrode platforms for further enhancement of the electrochemical performance of the C-MEMS platform. In this article, different techniques and methods in order to enhance C-MEMS based various electrochemical capacitor systems have been discussed, including electrochemical activation of C-MEMS structures for miniaturized supercapacitor applications, integration of carbon nanostructures like carbon nanotubes onto C-MEMS structures and also integration of pseudocapacitive materials such as polypyrrole onto C-MEMS structures. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

Directory of Open Access Journals (Sweden)

Hao Liu

2017-12-01

Full Text Available Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

Biomorphous SiC ceramics prepared from cork oak as precursor

Science.gov (United States)

Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

2016-04-01

Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:C:Si, SiC:C, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

SiC Power MOSFET with Improved Gate Dielectric

Energy Technology Data Exchange (ETDEWEB)

Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2010-08-23

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

Energy Technology Data Exchange (ETDEWEB)

Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

2013-06-01

We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

Science.gov (United States)

Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

2016-09-01

This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

MEMS Gyroscopes Based on Acoustic Sagnac Effect

Directory of Open Access Journals (Sweden)

Yuanyuan Yu

2016-12-01

Full Text Available This paper reports on the design, fabrication and preliminary test results of a novel microelectromechanical systems (MEMS device—the acoustic gyroscope. The unique operating mechanism is based on the “acoustic version” of the Sagnac effect in fiber-optic gyros. The device measures the phase difference between two sound waves traveling in opposite directions, and correlates the signal to the angular velocity of the hosting frame. As sound travels significantly slower than light and develops a larger phase change within the same path length, the acoustic gyro can potentially outperform fiber-optic gyros in sensitivity and form factor. It also promises superior stability compared to vibratory MEMS gyros as the design contains no moving parts and is largely insensitive to mechanical stress or temperature. We have carried out systematic simulations and experiments, and developed a series of processes and design rules to implement the device.

Miniaturized GPS/MEMS IMU integrated board

Science.gov (United States)

Lin, Ching-Fang (Inventor)

2012-01-01

This invention documents the efforts on the research and development of a miniaturized GPS/MEMS IMU integrated navigation system. A miniaturized GPS/MEMS IMU integrated navigation system is presented; Laser Dynamic Range Imager (LDRI) based alignment algorithm for space applications is discussed. Two navigation cameras are also included to measure the range and range rate which can be integrated into the GPS/MEMS IMU system to enhance the navigation solution.

Going Fabless with MEMS

Directory of Open Access Journals (Sweden)

Bhaskar CHOUBEY

2011-04-01

Full Text Available The Microelectromechanical sensors are finding increasing applications in everyday life. However, each MEMS sensor is generally fabricated on its own individual process. This leads to high cost per sensor. It has been suggested the MEMS should and would follow the path of integrated circuits industry, wherein fabless firms could concentrate on design leading pure-foundries to perfect the manufacturing process. With several designs being manufactured on the same process, the installation cost of fabrication would be evenly shared. Simultaneously, multiple project wafer runs are being offered for MEMS processes to encourage design activity in universities as well as startups. This paper reviews the present state of this transition through an experience of designing and manufacturing microelectromechanical resonators on different processes.

Structured synthesis of MEMS using evolutionary approaches

DEFF Research Database (Denmark)

Fan, Zhun; Wang, Jiachuan; Achiche, Sofiane

2008-01-01

In this paper, we discuss the hierarchy that is involved in a typical MEMS design and how evolutionary approaches can be used to automate the hierarchical synthesis process for MEMS. The paper first introduces the flow of a structured MEMS design process and emphasizes that system-level lumped...

Influence of defects in SiC (0001) on epitaxial graphene

International Nuclear Information System (INIS)

Guo Yu; Guo Li-Wei; Lu Wei; Huang Jiao; Jia Yu-Ping; Sun Wei; Li Zhi-Lin; Wang Yi-Fei

2014-01-01

Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG. (rapid communication)

As análises da memória militar sobre a ditadura: balanço e possibilidades

Directory of Open Access Journals (Sweden)

Cláudio Beserra de Vasconcelos

2009-06-01

Full Text Available Estudos baseados em fontes orais têm possibilitado boas reflexões sobre a ditadura implantada no Brasil em 1964. Entre elas, tem recebido especial atenção a memória dos militares partícipes do regime. De maneira inversa, a memória dos militares cassados tem recebido pouca atenção. Este artigo faz um balanço das principais análises da memória militar sobre a ditadura, tentando apresentar seus limites e levantar questões para o enriquecimento dos estudos sobre o tema.

[Application of Raman spectroscopy to investigation of CVD-SIC fiber].

Science.gov (United States)

Liu, Bin; Yang, Yan-Qing; Luo, Xian; Huang, Bin

2011-11-01

The CVD-SiC fiber was studied by using laser Raman spectra. It was found that the sharp TO peak exists in the first SiC deposit layer, indicating the larger SiC grains. But the second SiC deposit layer is with small grains. Raman peak of carbon and silicon was detected respectively in the first and second layer. Compared with that of the single SiC fiber, the TO peaks move to the high wave number for the SiC fiber in SiC(f)/Ti-6Al-4V composite. It indicates that the compressive thermal residual stress is present in the SiC fiber during the fabrication of the composite because of the mismatched coefficient of thermal expansion between Ti-6Al-4V matrix and SiC fiber. The average thermal residual stress of the SiC fiber in SiC(f)/Ti-6Al-4V composite was calculated to be 318 MPa and the residual stress in first deposit layer is 436 MPa which is much higher than that in the second layer.

Topology optimized RF MEMS switches

DEFF Research Database (Denmark)

Philippine, M. A.; Zareie, H.; Sigmund, Ole

2013-01-01

Topology optimization is a rigorous and powerful method that should become a standard MEMS design tool - it can produce unique and non-intuitive designs that meet complex objectives and can dramatically improve the performance and reliability of MEMS devices. We present successful uses of topology...

SiC as an oxidation-resistant refractory material. Pt. 1

International Nuclear Information System (INIS)

Schlichting, J.

1979-01-01

Uses his own investigations and gives a literature survey on the oxidation and corrosion behaviour of SiC (in the form of a pure SiC powder, hot-pressed and reaction-sintered materials). The excellent stability of SiC in oxidizing atmosphere is due to the development of protective SiO 2 coatings. Any changes in these protective coatings (e.g. due to impurities with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of application of SiC. (orig.) [de

MEMS reliability: coming of age

Science.gov (United States)

Douglass, Michael R.

2008-02-01

In today's high-volume semiconductor world, one could easily take reliability for granted. As the MOEMS/MEMS industry continues to establish itself as a viable alternative to conventional manufacturing in the macro world, reliability can be of high concern. Currently, there are several emerging market opportunities in which MOEMS/MEMS is gaining a foothold. Markets such as mobile media, consumer electronics, biomedical devices, and homeland security are all showing great interest in microfabricated products. At the same time, these markets are among the most demanding when it comes to reliability assurance. To be successful, each company developing a MOEMS/MEMS device must consider reliability on an equal footing with cost, performance and manufacturability. What can this maturing industry learn from the successful development of DLP technology, air bag accelerometers and inkjet printheads? This paper discusses some basic reliability principles which any MOEMS/MEMS device development must use. Examples from the commercially successful and highly reliable Digital Micromirror Device complement the discussion.

Miniaturization of components and systems for space using MEMS-technology

Science.gov (United States)

Grönland, Tor-Arne; Rangsten, Pelle; Nese, Martin; Lang, Martin

2007-06-01

of this micropropulsion system is that all critical components such as thrust chamber/nozzle assembly including internal heaters, valves and filters are manufactured using MEMS technology. Moreover, miniaturized pressure sensors, relying on MEMS technology, is also part of the system as a self-standing component. The flight opportunity on PRISMA represents one of the few and thus important opportunities to demonstrate MEMS technology in space. The present paper aims at describing this development effort and highlights the benefits of miniaturized components and systems for space using MEMS technology.

Structural and thermal characterization of polyvinylalcohol grafted SiC nanocrystals

DEFF Research Database (Denmark)

Saini, Isha; Sharma, Annu; Dhiman, Rajnish

2017-01-01

introduced in the characteristic TO and LO mode of vibration of SiC nanocrystals after grafting procedure.XRD analysis confirmed that the grafting procedure did not alter the crystalline geometry of SiC nanocrystals. TEM and SEM images further support the FTIR and Raman spectroscopic results and confirm...... of semiconducting SiC nanocrystals using a novel method. FTIR spectroscopy reveals the introduction of new peaks corresponding to various functional groups of PVA alongwith the presence of characteristic Si-C vibrational peak in the spectra of grafted SiC nanocrystals. Raman spectra depict the presence of changes...... the presence of PVA layer around SiC nanocrystals. Thermal degradation behavior of PVA-g-SiC nanocrystals has been studied using TGA analysis....

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Electromagnetic actuation in MEMS switches

DEFF Research Database (Denmark)

Oliveira Hansen, Roana Melina de; Mátéfi-Tempfli, Mária; Chemnitz, Steffen

. Electromagnetic actuation is a very promising approach to operate such MEMS and Power MEMS devices, due to the long range, reproducible and strong forces generated by this method, among other advantages. However, the use of electromagnetic actuation in such devices requires the use of thick magnetic films, which...

Optimization and simulation of MEMS rectilinear ion trap

Directory of Open Access Journals (Sweden)

Huang Gang

2015-04-01

Full Text Available In this paper, the design of a MEMS rectilinear ion trap was optimized under simulated conditions. The size range of the MEMS rectilinear ion trap’s electrodes studied in this paper is measured at micron scale. SIMION software was used to simulate the MEMS rectilinear ion trap with different sizes and different radio-frequency signals. The ion-trapping efficiencies of the ion trap under these different simulation conditions were obtained. The ion-trapping efficiencies were compared to determine the performance of the MEMS rectilinear ion trap in different conditions and to find the optimum conditions. The simulation results show that for the ion trap at micron scale or smaller, the optimized length–width ratio was 0.8, and a higher frequency of radio-frequency signal is necessary to obtain a higher ion-trapping efficiency. These results have a guiding role in the process of developing MEMS rectilinear ion traps, and great application prospects in the research fields of the MEMS rectilinear ion trap and the MEMS mass spectrometer.

SiC Seeded Crystal Growth

Science.gov (United States)

Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

1997-07-01

The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

OpenAIRE

van Essen, M.C.

2009-01-01

Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

High density plasma via hole etching in SiC

International Nuclear Information System (INIS)

Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

2001-01-01

Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

Interfacial reactions in Ti-6Al-4V with laser-embedded SiC particles and the origin of intergranular corrosion susceptibility of an Al-Mg alloy

NARCIS (Netherlands)

Kooi, BJ; De Hosson, JTM; Carter, CB; Hall, EL; Nutt,; Briant, CL

2000-01-01

In the first part of the paper the microstructure of Ti-6Al-4V with laser embedded SiC particle is explained. The interfacial reaction between Ti and SiC is responsible for the largely improved wear resistance of the Ti alloy. In the second part the phase responsible for the intergranular corrosion

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

Comparative study of SiC- and Si-based photovoltaic inverters

Science.gov (United States)

Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

2017-01-01

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

MEMS-based transmission lines for microwave applications

Science.gov (United States)

Wu, Qun; Fu, Jiahui; Gu, Xuemai; Shi, Huajuan; Lee, Jongchul

2003-04-01

This paper mainly presents a briefly review for recent progress in MEMS-based transmission lines for use in microwave and millimeterwave range. MEMS-based transmission lines including different transmission line structure such as membrane-supported microstrip line microstrip line, coplanar microshield transmission line, LIGA micromachined planar transmission line, micromachined waveguides and coplanar waveguide are discussed. MEMS-based transmission lines are characterized by low propagation loss, wide operation frequency band, low dispersion and high quality factor, in addition, the fabrication is compatible with traditional processing of integrated circuits (IC"s). The emergence of MEMS-based transmission lines provided a solution for miniaturizing microwave system and monolithic microwave integrated circuits.

MEMS/MOEMS foundry services at INO

Science.gov (United States)

García-Blanco, Sonia; Ilias, Samir; Williamson, Fraser; Généreux, Francis; Le Noc, Loïc; Poirier, Michel; Proulx, Christian; Tremblay, Bruno; Provençal, Francis; Desroches, Yan; Caron, Jean-Sol; Larouche, Carl; Beaupré, Patrick; Fortin, Benoit; Topart, Patrice; Picard, Francis; Alain, Christine; Pope, Timothy; Jerominek, Hubert

2010-06-01

In the MEMS manufacturing world, the "fabless" model is getting increasing importance in recent years as a way for MEMS manufactures and startups to minimize equipment costs and initial capital investment. In order for this model to be successful, the fabless company needs to work closely with a MEMS foundry service provider. Due to the lack of standardization in MEMS processes, as opposed to CMOS microfabrication, the experience in MEMS development processes and the flexibility of the MEMS foundry are of vital importance. A multidisciplinary team together with a complete microfabrication toolset allows INO to offer unique MEMS foundry services to fabless companies looking for low to mid-volume production. Companies that benefit from their own microfabrication facilities can also be interested in INO's assistance in conducting their research and development work during periods where production runs keep their whole staff busy. Services include design, prototyping, fabrication, packaging, and testing of various MEMS and MOEMS devices on wafers fully compatible with CMOS integration. Wafer diameters ranging typically from 1 inch to 6 inches can be accepted while 8-inch wafers can be processed in some instances. Standard microfabrication techniques such as metal, dielectric, and semiconductor film deposition and etching as well as photolithographic pattern transfer are available. A stepper permits reduction of the critical dimension to around 0.4 μm. Metals deposited by vacuum deposition methods include Au, Ag, Al, Al alloys, Ti, Cr, Cu, Mo, MoCr, Ni, Pt, and V with thickness varying from 5 nm to 2 μm. Electroplating of several materials including Ni, Au and In is also available. In addition, INO has developed and built a gold black deposition facility to answer customer's needs for broadband microbolometric detectors. The gold black deposited presents specular reflectance of less than 10% in the wavelength range from 0.2 μm to 100 μm with thickness ranging from

Optical MEMS for Earth observation

Science.gov (United States)

Liotard, Arnaud; Viard, Thierry; Noell, Wilfried; Zamkotsian, Frédéric; Freire, Marco; Guldimann, Benedikt; Kraft, Stefan

2017-11-01

Due to the relatively large number of optical Earth Observation missions at ESA, this area is interesting for new space technology developments. In addition to their compactness, scalability and specific task customization, optical MEMS could generate new functions not available with current technologies and are thus candidates for the design of future space instruments. Most mature components for space applications are the digital mirror arrays, the micro-deformable mirrors, the programmable micro diffraction gratings and tiltable micromirrors. A first selection of market-pull and techno-push concepts is done. In addition, some concepts are coming from outside Earth Observation. Finally two concepts are more deeply analyzed. The first concept is a programmable slit for straylight control for space spectro-imagers. This instrument is a push-broom spectroimager for which some images cannot be exploited because of bright sources in the field-of-view. The proposed concept consists in replacing the current entrance spectrometer slit by an active row of micro-mirrors. The MEMS will permit to dynamically remove the bright sources and then to obtain a field-of-view with an optically enhanced signal-to-noise ratio. The second concept is a push-broom imager for which the acquired spectrum can be tuned by optical MEMS. This system is composed of two diffractive elements and a digital mirror array. The first diffractive element spreads the spectrum. A micromirror array is set at the location of the spectral focal plane. By putting the micro-mirrors ON or OFF, we can select parts of field-of-view or spectrum. The second diffractive element then recombines the light on a push-broom detector. Dichroics filters, strip filter, band-pass filter could be replaced by a unique instrument.

Advanced mechatronics and MEMS devices II

CERN Document Server

Wei, Bin

2017-01-01

This book introduces the state-of-the-art technologies in mechatronics, robotics, and MEMS devices in order to improve their methodologies. It provides a follow-up to "Advanced Mechatronics and MEMS Devices" (2013) with an exploration of the most up-to-date technologies and their applications, shown through examples that give readers insights and lessons learned from actual projects. Researchers on mechatronics, robotics, and MEMS as well as graduate students in mechanical engineering will find chapters on: Fundamental design and working principles on MEMS accelerometers Innovative mobile technologies Force/tactile sensors development Control schemes for reconfigurable robotic systems Inertial microfluidics Piezoelectric force sensors and dynamic calibration techniques ...And more. Authors explore applications in the areas of agriculture, biomedicine, advanced manufacturing, and space. Micro-assembly for current and future industries is also considered, as well as the design and development of micro and intel...

New constructions of approximately SIC-POVMs via difference sets

Science.gov (United States)

Luo, Gaojun; Cao, Xiwang

2018-04-01

In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

RF MEMS: status of the industry and roadmaps

Science.gov (United States)

Bouchaud, Jeremie; Wicht, Henning

2005-01-01

Microsystems for Radio Frequency applications, known as RF MEMS, have entered the commercialization phase in 2003. Bulk Acoustic Wave filters are already produced in series and first commercial samples of switches are available. On the other hand, reliability and packaging problems are still a major hurdle especially for switches and tunable capacitors. Will RF MEMS hold their promise to be one of the future major businesses for MEMS? The presentation will give an overview on RF MEMS applications and market players. WTC will highlight technical challenges that still have to be solved to open mass markets such as mobile telephony and WLAN. WTC will also present applications of RF MEMS and opportunities in niche markets with high added value like military and space applications. WTC will provide a regional analysis and compare R&D focus and public funding situation in North America, Europe and Asia. Finally, WTC will present an updated product roadmap market forecast for RF MEMS devices for the 2004-2008 time period.

Development of the fabrication process of SiC composite by polycarbosilane

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju; Kim, Jung Il; Ryu, Woo Seog

2004-11-01

This technical report reviewed the fabrication process of fiber reinforced ceramic composites, characteristics of the PIP process, and applications of SiC f /SiC composite to develop a silicon carbide composite by PIP method. Additionally, characteristics and thermal behaviors of a PCS+SiC powder slurry and infiltration behaviors of slurry into the SiC fabric was evaluated. The stacking behaviors of SiC fabrics infiltrated a PCS+SiC powder slurry was also investigated. Using this stacked preforms, SiC f /SiC composites were fabricated by the electron beam curing and pyrolysis process and the thermal oxidation curing and pyrolysis process, respectively. And the characteristics of both composites were compared

Near-surface and bulk behavior of Ag in SiC

International Nuclear Information System (INIS)

Xiao, H.Y.; Zhang, Y.; Snead, L.L.; Shutthanandan, V.; Xue, H.Z.; Weber, W.J.

2012-01-01

Highlights: ► Ag release from SiC poses problems in safe operation of nuclear reactors. ► Near-surface and bulk behavior of Ag are studied by ab initio and ion beam methods. ► Ag prefers to adsorb on the surface rather than in the bulk SiC. ► At high temperature Ag desorbs from the surface instead of diffusion into bulk SiC. ► Surface diffusion may be a dominating mechanism accounting for Ag release from SiC. - Abstract: The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85–1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

The Micronium-A Musical MEMS instrument

NARCIS (Netherlands)

Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, Hylco; Beekman, Jethro G.; Fortgens, Laurens C.; de Graaf, Derk B.; Vocke, Sander; Abelmann, Leon

The Micronium is a musical instrument fabricated from silicon using microelectromechanical system (MEMS) technology. It is—to the best of our knowledge—the first musical micro-instrument fabricated using MEMS technology, where the actual sound is generated by mechanical microstructures. The

Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

Directory of Open Access Journals (Sweden)

Li Zhong

2013-01-01

Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

Microwave joining of SiC ceramics and composites

Energy Technology Data Exchange (ETDEWEB)

Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

1997-04-01

Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

A MEMS-based super fast dew point hygrometer—construction and medical applications

International Nuclear Information System (INIS)

Jachowicz, Ryszard S; Weremczuk, Jerzy; Paczesny, Daniel; Tarapata, Grzegorz

2009-01-01

The paper shows how MEMS (micro-electro-mechanical system) technology and a modified principle of fast temperature control (by heat injection instead of careful control of cooling) can considerably improve the dynamic parameters of dew point hygrometers. Some aspects of MEMS-type integrated sensor construction and technology, whole measurement system design, the control algorithm to run the system as well as empirical dynamic parameters from the tests are discussed too. The hygrometer can easily obtain five to six measurements per second with an uncertainty of less than 0.3 K. The meter range is between −10 °C and 40 °C dew point. In the second part of the paper (section 2), two different successful applications in medicine based on fast humidity measurements have been discussed. Some specific constructions of these super fast dew point hygrometers based on a MEMS sensor as well as limited empirical results from clinical tests have been reported too

A MEMS-based super fast dew point hygrometer—construction and medical applications

Science.gov (United States)

Jachowicz, Ryszard S.; Weremczuk, Jerzy; Paczesny, Daniel; Tarapata, Grzegorz

2009-12-01

The paper shows how MEMS (micro-electro-mechanical system) technology and a modified principle of fast temperature control (by heat injection instead of careful control of cooling) can considerably improve the dynamic parameters of dew point hygrometers. Some aspects of MEMS-type integrated sensor construction and technology, whole measurement system design, the control algorithm to run the system as well as empirical dynamic parameters from the tests are discussed too. The hygrometer can easily obtain five to six measurements per second with an uncertainty of less than 0.3 K. The meter range is between -10 °C and 40 °C dew point. In the second part of the paper (section 2), two different successful applications in medicine based on fast humidity measurements have been discussed. Some specific constructions of these super fast dew point hygrometers based on a MEMS sensor as well as limited empirical results from clinical tests have been reported too.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Introduction of nano-laminate Ti3SiC2 and SiC phases into Cf-C composite by liquid silicon infiltration method

Directory of Open Access Journals (Sweden)

Omid Yaghobizadeh

2017-03-01

Full Text Available The material Cf-C-SiC-Ti3SiC2 is promising for high temperature application. Due to the laminated structure and special properties, the Ti3SiC2 is one of the best reinforcements for Cf-C-SiC composites. In this paper, Cf-C-SiC-Ti3SiC2 composites were fabricated by liquid silicon infiltration (LSI method; the effect of the TiC amount on the various composites properties were studied. For samples with 0, 50 and 90 vol.% of TiC, the results show that bending strength are 168, 190, and 181 MPa; porosities are 3.2, 4.7, and 9%; the fracture toughness are 6.1, 8.9, and 7.8 MPa∙m1/2; interlaminar shear strength are 27, 36, and 30 MPa; the amount of the MAX phase are 0, 8.5, and 5.6 vol.%, respectively. These results show that amount of TiC is not the main effective parameter in synthesis of Ti3SiC2. The existence of carbon promotes the synthesis of Ti3SiC2 indicating that only sufficient carbon content can lead to the appearance of Ti3SiC2 in the LSI process.

A MEMS-based, wireless, biometric-like security system

Science.gov (United States)

Cross, Joshua D.; Schneiter, John L.; Leiby, Grant A.; McCarter, Steven; Smith, Jeremiah; Budka, Thomas P.

2010-04-01

We present a system for secure identification applications that is based upon biometric-like MEMS chips. The MEMS chips have unique frequency signatures resulting from fabrication process variations. The MEMS chips possess something analogous to a "voiceprint". The chips are vacuum encapsulated, rugged, and suitable for low-cost, highvolume mass production. Furthermore, the fabrication process is fully integrated with standard CMOS fabrication methods. One is able to operate the MEMS-based identification system similarly to a conventional RFID system: the reader (essentially a custom network analyzer) detects the power reflected across a frequency spectrum from a MEMS chip in its vicinity. We demonstrate prototype "tags" - MEMS chips placed on a credit card-like substrate - to show how the system could be used in standard identification or authentication applications. We have integrated power scavenging to provide DC bias for the MEMS chips through the use of a 915 MHz source in the reader and a RF-DC conversion circuit on the tag. The system enables a high level of protection against typical RFID hacking attacks. There is no need for signal encryption, so back-end infrastructure is minimal. We believe this system would make a viable low-cost, high-security system for a variety of identification and authentication applications.

Homoepitaxial VPE growth of SiC active layers

Energy Technology Data Exchange (ETDEWEB)

Burk, A.A. Jr. [Northrop Grumman Electron. Sensors and Syst. Div., Baltimore, MD (United States); Rowland, L.B. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

1997-07-01

SiC active layers of tailored thickness and doping form the heart of all SiC electronic devices. These layers are most conveniently formed by vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC-VPE layers` material properties by both semiconductor device physics and available methods of device processing. In this paper, the current ability of the SiC-VPE process to meet these requirements is described along with continuing improvements in SiC epitaxial reactors, processes and materials. (orig.) 48 refs.

Miniaturized Rotary Actuators Using Shape Memory Alloy for Insect-Type MEMS Microrobot

Directory of Open Access Journals (Sweden)

Ken Saito

2016-03-01

Full Text Available Although several types of locomotive microrobots have been developed, most of them have difficulty locomoting on uneven surfaces. Thus, we have been focused on microrobots that can locomote using step patterns. We are studying insect-type microrobot systems. The locomotion of the microrobot is generated by rotational movements of the shape memory alloy-type rotary actuator. In addition, we have constructed artificial neural networks by using analog integrated circuit (IC technology. The artificial neural networks can output the driving waveform without using software programs. The shape memory alloy-type rotary actuator and the artificial neural networks are constructed with silicon wafers; they can be integrated by using micro-electromechanical system (MEMS technology. As a result, the MEMS microrobot system can locomote using step patterns. The insect-type MEMS microrobot system is 0.079 g in weight and less than 5.0 mm in size, and its locomotion speed is 2 mm/min. The locomotion speed is slow because the heat of the shape memory alloy conducts to the mechanical parts of the MEMS microrobot. In this paper, we discuss a new rotary actuator compared with the previous model and show the continuous rotation of the proposed rotary actuator.

A review of vibration-based MEMS piezoelectric energy harvesters

Energy Technology Data Exchange (ETDEWEB)

Saadon, Salem; Sidek, Othman [Collaborative Microelectronic Design Excellence Center (CEDEC), School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang (Malaysia)

2011-01-15

The simplicity associated with the piezoelectric micro-generators makes it very attractive for MEMS applications, especially for remote systems. In this paper we reviewed the work carried out by researchers during the last three years. The improvements in experimental results obtained in the vibration-based MEMS piezoelectric energy harvesters show very good scope for MEMS piezoelectric harvesters in the field of power MEMS in the near future. (author)

Rare earth element abundances in presolar SiC

Science.gov (United States)

Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

2018-01-01

Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

SiC Conversion Coating Prepared from Silica-Graphite Reaction

Directory of Open Access Journals (Sweden)

Back-Sub Sung

2017-01-01

Full Text Available The β-SiC conversion coatings were successfully synthesized by the SiO(v-graphite(s reaction between silica powder and graphite specimen. This paper is to describe the effects on the characteristics of the SiC conversion coatings, fabricated according to two different reaction conditions. FE-SEM, FE-TEM microstructural morphologies, XRD patterns, pore size distribution, and oxidation behavior of the SiC-coated graphite were investigated. In the XRD pattern and SAD pattern, the coating layers showed cubic SiC peak as well as hexagonal SiC peak. The SiC coatings showed somewhat different characteristics with the reaction conditions according to the position arrangement of the graphite samples. The SiC coating on graphite, prepared in reaction zone (2, shows higher intensity of beta-SiC main peak (111 in XRD pattern as well as rather lower porosity and smaller main pore size peak under 1 μm.

System-Level Modelling and Simulation of MEMS-Based Sensors

DEFF Research Database (Denmark)

Virk, Kashif M.; Madsen, Jan; Shafique, Mohammad

2005-01-01

The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration with the......The growing complexity of MEMS devices and their increased used in embedded systems (e.g., wireless integrated sensor networks) demands a disciplined aproach for MEMS design as well as the development of techniques for system-level modeling of these devices so that a seamless integration...... with the existing embedded system design methodologies is possible. In this paper, we present a MEMS design methodology that uses VHDL-AMS based system-level model of a MEMS device as a starting point and combines the top-down and bottom-up design approaches for design, verification, and optimization...

About SIC POVMs and discrete Wigner distributions

International Nuclear Information System (INIS)

Colin, Samuel; Corbett, John; Durt, Thomas; Gross, David

2005-01-01

A set of d 2 vectors in a Hilbert space of dimension d is called equiangular if each pair of vectors encloses the same angle. The projection operators onto these vectors define a POVM which is distinguished by its high degree of symmetry. Measures of this kind are called symmetric informationally complete, or SIC POVMs for short, and could be applied for quantum state tomography. Despite its simple geometrical description, the problem of constructing SIC POVMs or even proving their existence seems to be very hard. It is our purpose to introduce two applications of discrete Wigner functions to the analysis of the problem at hand. First, we will present a method for identifying symmetries of SIC POVMs under Clifford operations. This constitutes an alternative approach to a structure described before by Zauner and Appleby. Further, a simple and geometrically motivated construction for an SIC POVM in dimensions two and three is given (which, unfortunately, allows no generalization). Even though no new structures are found, we hope that the re-formulation of the problem may prove useful for future inquiries

Research Progress of Optical Fabrication and Surface-Microstructure Modification of SiC

Directory of Open Access Journals (Sweden)

Fang Jiang

2012-01-01

Full Text Available SiC has become the best candidate material for space mirror and optical devices due to a series of favorable physical and chemical properties. Fine surface optical quality with the surface roughness (RMS less than 1 nm is necessary for fine optical application. However, various defects are present in SiC ceramics, and it is very difficult to polish SiC ceramic matrix with the 1 nm RMS. Surface modification of SiC ceramics must be done on the SiC substrate. Four kinds of surface-modification routes including the hot pressed glass, the C/SiC clapping, SiC clapping, and Si clapping on SiC surface have been reported and reviewed here. The methods of surface modification, the mechanism of preparation, and the disadvantages and advantages are focused on in this paper. In our view, PVD Si is the best choice for surface modification of SiC mirror.

New Possibilities of Power Electronic Structures Using SiC Technology

Directory of Open Access Journals (Sweden)

Robert Sul

2006-01-01

Full Text Available This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the beginning of 80’s, also at our university.

Acoustic resonance in MEMS scale cylindrical tubes with side branches

Science.gov (United States)

Schill, John F.; Holthoff, Ellen L.; Pellegrino, Paul M.; Marcus, Logan S.

2014-05-01

Photoacoustic spectroscopy (PAS) is a useful monitoring technique that is well suited for trace gas detection. This method routinely exhibits detection limits at the parts-per-million (ppm) or parts-per-billion (ppb) level for gaseous samples. PAS also possesses favorable detection characteristics when the system dimensions are scaled to a microelectromechanical system (MEMS) design. One of the central issues related to sensor miniaturization is optimization of the photoacoustic cell geometry, especially in relationship to high acoustical amplification and reduced system noise. Previous work relied on a multiphysics approach to analyze the resonance structures of the MEMS scale photo acoustic cell. This technique was unable to provide an accurate model of the acoustic structure. In this paper we describe a method that relies on techniques developed from musical instrument theory and electronic transmission line matrix methods to describe cylindrical acoustic resonant cells with side branches of various configurations. Experimental results are presented that demonstrate the ease and accuracy of this method. All experimental results were within 2% of those predicted by this theory.

SiC nanoparticles as potential carriers for biologically active substances

Science.gov (United States)

Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

2009-01-01

Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

Science.gov (United States)

Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

2017-08-01

Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

Packaging of MEMS/MOEMS and nanodevices: reliability, testing, and characterization aspects

Science.gov (United States)

Tekin, Tolga; Ngo, Ha-Duong; Wittler, Olaf; Bouhlal, Bouchaib; Lang, Klaus-Dieter

2011-02-01

The last decade witnessed an explosive growth in research and development efforts devoted to MEMS devices and packaging. The successfully developed MEMS devices are, for example inkjet, pressure sensors, silicon microphones, accelerometers, gyroscopes, MOEMS, micro fuel cells and emerging MEMS. For the next decade, MEMS/MOEMS and nanodevice based products will penetrate into IT, telecommunications, automotive, defense, life sciences, medical and implantable applications. Forecasts say the MEMS market to be $14 billion by 2012. The packaging cost of MEMS/MOEMS products in general is about 70 percent. Unlike today's electronics IC packaging, their packaging are custom-built and difficult due to the moving structural elements. In order for the moving elements of a MEMS device to move effectively in a well-controlled atmosphere, hermetic sealing of the MEMS device in a cap is necessary. For some MEMS devices, such as resonators and gyroscopes, vacuum packaging is required. Usually, the cap is processed at the wafer level, and thus MEMS packaging is truly a wafer level packaging. In terms of MEMS/MOEMS and nanodevice packaging, there are still many critical issues need to be addressed due to the increasing integration density supported by 3D heterogeneous integration of multi-physic components/layers consisting of photonics, electronics, rf, plasmonics, and wireless. The infrastructure of MEMS/MOEMS and nanodevices and their packaging is not well established yet. Generic packaging platform technologies are not available. Some of critical issues have been studied intensively in the last years. In this paper we will discuss about processes, reliability, testing and characterization of MEMS/MOEMS and nanodevice packaging.

Challenges in Switching SiC MOSFET without Ringing

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig

2014-01-01

Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

MAX Phase Modified SiC Composites for Ceramic-Metal Hybrid Cladding Tubes

International Nuclear Information System (INIS)

Jung, Yang-Il; Kim, Sun-Han; Park, Dong-Jun; Park, Jeong-Hwan; Park, Jeong-Yong; Kim, Hyun-Gil; Koo, Yang-Hyun

2015-01-01

A metal-ceramic hybrid cladding consists of an inner zirconium tube, and an outer SiC fiber-matrix SiC ceramic composite with surface coating as shown in Fig. 1 (left-hand side). The inner zirconium allows the matrix to remain fully sealed even if the ceramic matrix cracks through. The outer SiC composite can increase the safety margin by taking the merits of the SiC itself. In addition, the outermost layer prevents the dissolution of SiC during normal operation. On the other hand, a ceramic-metal hybrid cladding consists of an outer zirconium tube, and an inner SiC ceramic composite as shown in Fig. 1 (right-hand side). The outer zirconium protects the fuel rod from a corrosion during reactor operation, as in the present fuel claddings. The inner SiC composite, additionally, is designed to resist the severe oxidation under a postulated accident condition of a high-temperature steam environment. Reaction-bonded SiC was fabricated by modifying the matrix as the MAX phase. The formation of Ti 3 SiC 2 was investigated depending on the compositions of the preform and melt. In most cases, TiSi 2 was the preferential phase because of its lowest melting point in the Ti-Si-C system. The evidence of Ti 3 SiC 2 was the connection with the pressurizing

Packaging Technologies for 500C SiC Electronics and Sensors

Science.gov (United States)

Chen, Liang-Yu

2013-01-01

Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

Formation mechanism of SiC in C-Si system by ion irradiation

International Nuclear Information System (INIS)

Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

2003-01-01

The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

Residual stress and mechanical properties of SiC ceramic by heat treatment

International Nuclear Information System (INIS)

Yoon, H.K.; Kim, D.H.; Shin, B.C.

2007-01-01

Full text of publication follows: Silicon carbide is a compound of relatively low density, high hardness, elevated thermal stability and good thermal conductivity, resulting in good thermal shock resistance. Because of these properties, SiC materials are widely used as abrasives and refractories. In this study, SiC single and poly crystals was grown by the sublimation method using the SiC seed crystal and SiC powder as the source material. Mechanical properties of SiC single and poly crystals are carried out by using the nano-indentation method and small punch test after the heat treatment. As a result, mechanical properties of SiC poly crystal had over double than single. And SiC single and poly crystals were occurred residual stress, but residual stress was shown relaxant properties by the effect of heat treatment. (authors)

MEMS-Based Waste Vibrational Energy Harvesters

Science.gov (United States)

2013-06-01

MEMS energy- harvesting device. Although PZT is used more prevalently due to its higher piezoelectric coefficient and dielectric constant, AlN has...7 1. Lead Zirconium Titanate ( PZT ) .........................................................7 2. Aluminum...Laboratory PiezoMUMPS Piezoelectric Multi-User MEMS Processes PZT Lead Zirconate Titanate SEM Scanning Electron Microscopy SiO2 Silicon

Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

Directory of Open Access Journals (Sweden)

Di Chen

2007-05-01

Full Text Available Electrostatic micro-electro-mechanical system (MEMS is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

A Nuclear Microbattery for MEMS Devices

International Nuclear Information System (INIS)

Blanchard, James; Henderson, Douglass; Lal, Amit

2002-01-01

This project was designed to demonstrate the feasibility of producing on-board power for MEMS devices using radioisotopes. MEMS is a fast growing field, with hopes for producing a wide variety of revolutionary applications, including ''labs on a chip,'' micromachined scanning tunneling microscopes, microscopic detectors for biological agents, microsystems for DNA identification, etc. Currently, these applications are limited by the lack of an on-board power source. Research is ongoing to study approaches such as fuel cells, fossil fuels, and chemical batteries, but all these concepts have limitations. For long-lived, high energy density applications, on-board radioisotope power offers the best choice. We have succeeded in producing such devices using a variety of isotopes, incorporation methods, and device geometries. These experiments have demonstrated the feasibility of using radioisotope power and that there are a variety of options available for MEMS designers. As an example of an integrated, self-powered application, we have created an oscillating cantilever beam that is capable of consistent, periodic oscillations over very long time periods without the need for refueling. Ongoing work will demonstrate that this cantilever is capable of radio frequency transmission, allowing MEMS devices to communicate with one another wirelessly. Thus, this will be the first self-powered wireless transmitter available for use in MEMS devices, permitting such applications as sensors embedded in buildings for continuous monitoring of the building performance and integrity

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

Standard semiconductor packaging for high-reliability low-cost MEMS applications

Science.gov (United States)

Harney, Kieran P.

2005-01-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

MEMS-Based Micro Gas Chromatography: Design, Fabrication and Characterization

OpenAIRE

Zareian-Jahromi, Mohammad Amin

2009-01-01

This work is focused on the design, fabrication and characterization of high performance MEMS-based micro gas chromatography columns having wide range of applications in the pharmaceutical industry, environmental monitoring, petroleum distillation, clinical chemistry, and food processing. The first part of this work describes different approaches to achieve high-performance microfabricated silicon-glass separation columns for micro gas chromatographic (µGC) systems. The capillary width effec...

Investigating ESD sensitivity in electrostatic SiGe MEMS

International Nuclear Information System (INIS)

Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

2010-01-01

The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

Irradiation damages in Ti3SiC2

International Nuclear Information System (INIS)

Nappe, J.C.; Grosseau, Ph.; Guilhot, B.; Audubert, F.; Beauvy, M.

2007-01-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti 3 SiC 2 is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO 2 (formed at the surface of Ti 3 SiC 2 ) is pulverized by the irradiation and that the crystal lattice of Ti 3 SiC 2 dilates with c. (O.M.)

MEMS Reliability: Infrastructure, Test Structures, Experiments, and Failure Modes

Energy Technology Data Exchange (ETDEWEB)

TANNER,DANELLE M.; SMITH,NORMAN F.; IRWIN,LLOYD W.; EATON,WILLIAM P.; HELGESEN,KAREN SUE; CLEMENT,J. JOSEPH; MILLER,WILLIAM M.; MILLER,SAMUEL L.; DUGGER,MICHAEL T.; WALRAVEN,JEREMY A.; PETERSON,KENNETH A.

2000-01-01

The burgeoning new technology of Micro-Electro-Mechanical Systems (MEMS) shows great promise in the weapons arena. We can now conceive of micro-gyros, micro-surety systems, and micro-navigators that are extremely small and inexpensive. Do we want to use this new technology in critical applications such as nuclear weapons? This question drove us to understand the reliability and failure mechanisms of silicon surface-micromachined MEMS. Development of a testing infrastructure was a crucial step to perform reliability experiments on MEMS devices and will be reported here. In addition, reliability test structures have been designed and characterized. Many experiments were performed to investigate failure modes and specifically those in different environments (humidity, temperature, shock, vibration, and storage). A predictive reliability model for wear of rubbing surfaces in microengines was developed. The root causes of failure for operating and non-operating MEMS are discussed. The major failure mechanism for operating MEMS was wear of the polysilicon rubbing surfaces. Reliability design rules for future MEMS devices are established.

TRISO coated fuel particles with enhanced SiC properties

International Nuclear Information System (INIS)

Lopez-Honorato, E.; Tan, J.; Meadows, P.J.; Marsh, G.; Xiao, P.

2009-01-01

The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

Detail study of SiC MOSFET switching characteristics

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig

2014-01-01

This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

A novel piezoresistive polymer nanocomposite MEMS accelerometer

International Nuclear Information System (INIS)

Seena, V; Hari, K; Prajakta, S; Ramgopal Rao, V; Pratap, Rudra

2017-01-01

A novel polymer MEMS (micro electro mechanical systems) accelerometer with photo-patternable polymer nanocomposite as a piezoresistor is presented in this work. Polymer MEMS Accelerometer with beam thicknesses of 3.3 µ m and embedded nanocomposite piezoresistive layer having a gauge factor of 90 were fabricated. The photosensitive nanocomposite samples were prepared and characterized for analyzing the mechanical and electrical properties and thereby ensuring proper process parameters for incorporating the piezoresistive layer into the polymer MEMS accelerometer. The microfabrication process flow and unit processes followed are extremely low cost with process temperatures below 100 °C. This also opens up a new possibility for easy integration of such polymer MEMS with CMOS (complementary metal oxide semiconductor) devices and circuits. The fabricated devices were characterized using laser Doppler vibrometer (LDV) and the devices exhibited a resonant frequency of 10.8 kHz and a response sensitivity of 280 nm g −1 at resonance. The main focus of this paper is on the SU-8/CB nanocomposite piezoresistive MEMS accelerometer technology development which covers the material and the fabrication aspects of these devices. CoventorWare FEA analysis performed using the extracted material properties from the experimental characterization which are in close agreement to performance parameters of the fabricated devices is also discussed. The simulated piezoresistive polymer MEMS devices showed an acceleration sensitivity of 126 nm g −1 and 82 ppm of Δ R / R per 1 g of acceleration. (paper)

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

High Volume Manufacturing and Field Stability of MEMS Products

Science.gov (United States)

Martin, Jack

Low volume MEMS/NEMS production is practical when an attractive concept is implemented with business, manufacturing, packaging, and test support. Moving beyond this to high volume production adds requirements on design, process control, quality, product stability, market size, market maturity, capital investment, and business systems. In a broad sense, this chapter uses a case study approach: It describes and compares the silicon-based MEMS accelerometers, pressure sensors, image projection systems, and gyroscopes that are in high volume production. Although they serve several markets, these businesses have common characteristics. For example, the manufacturing lines use automated semiconductor equipment and standard material sets to make consistent products in large quantities. Standard, well controlled processes are sometimes modified for a MEMS product. However, novel processes that cannot run with standard equipment and material sets are avoided when possible. This reliance on semiconductor tools, as well as the organizational practices required to manufacture clean, particle-free products partially explains why the MEMS market leaders are integrated circuit manufacturers. There are other factors. MEMS and NEMS are enabling technologies, so it can take several years for high volume applications to develop. Indeed, market size is usually a strong function of price. This becomes a vicious circle, because low price requires low cost - a result that is normally achieved only after a product is in high volume production. During the early years, IC companies reduced cost and financial risk by using existing facilities for low volume MEMS production. As a result, product architectures are partially determined by capabilities developed for previous products. This chapter includes a discussion of MEMS product architecture with particular attention to the impact of electronic integration, packaging, and surfaces. Packaging and testing are critical, because they are

Advances in wide bandgap SiC for optoelectronics

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

2014-01-01

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

Calibration of High Frequency MEMS Microphones

Science.gov (United States)

Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

2007-01-01

Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

Research Progress on Preparation for Biomass-based SiC Ceramic

Directory of Open Access Journals (Sweden)

CUI He-shuai

2017-08-01

Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

Amorphous Diamond MEMS and Sensors

Energy Technology Data Exchange (ETDEWEB)

SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

2002-06-01

This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater

Fabrication of Multi-Layerd SiC Composite Tube for LWR Applications

Energy Technology Data Exchange (ETDEWEB)

Kim, Daejong; Jung, Choonghwan; Kim, Weonju; Park, Jiyeon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Jongmin [Chungnam National Univ., Daejeon (Korea, Republic of)

2013-05-15

In this study, the chemical vapor deposition (CVD) and chemical vapor infiltration (CVI) methods were employed for the fabrication of the composite tubes. SiC ceramics and SiC-based composites have recently been studied for LWR fuel cladding applications because of good mechanical/physical properties, neutron irradiation resistance and excellent compatibility with coolant under severe accident. A multi-layered SiC composite tube as the nuclear fuel cladding is composed of the monolith SiC inner layer, SiC/SiC composite intermediate layer, and monolith SiC outer layer. Since all constituents should be highly pure, stoichiometric to achieve the good properties, it has been considered that the chemical process is a well-suited technique for the fabrication of the SiC phases.

Determining the fracture resistance of advanced SiC fiber reinforced SiC matrix composites

International Nuclear Information System (INIS)

Nozawa, T.; Katoh, Y.; Kishimoto, H.

2007-01-01

Full text of publication follows: One of the perceived advantages for highly-crystalline and stoichiometric silicon carbide (SiC) and SiC composites, e.g., advanced SiC fiber reinforced chemically-vapor-infiltrated (CVI) SiC matrix composites, is the retention of fast fracture properties after neutron irradiation at high-temperatures (∼1000 deg. C) to intermediate-doses (∼15 dpa). Accordingly, it has been clarified that the maximum allowable stress (or strain) limit seems unaffected in certain irradiation conditions. Meanwhile, understanding the mechanism of crack propagation from flaws, as potential weakest link to cause composite failure, is somehow lacking, despite that determining the strength criterion based on the fracture mechanics will eventually become important considering the nature of composites' fracture. This study aims to evaluate crack propagation behaviors of advanced SiC/SiC and to provide fundamentals on fracture resistance of the composites to define the strength limit for the practical component design. For those purposes, the effects of irreversible energies related to interfacial de-bonding, fiber bridging, and microcrack forming on the fracture resistance were evaluated. Two-dimensional SiC/SiC composites were fabricated by CVI or nano-infiltration and transient-eutectic-phase (NITE ) methods. Hi-Nicalon TM Type-S or Tyranno TM -SA fibers were used as reinforcements. In-plane mode-I fracture resistance was evaluated by the single edge notched bend technique. The key finding is the continuous Load increase with the crack growth for any types of advanced composites, while many studies specified the gradual load decrease for the conventional composites once the crack initiates. This high quasi-ductility appeared due primarily to high friction (>100 MPa) at the fiber/matrix interface using rough SiC fibers. The preliminary analysis based on the linear elastic fracture mechanics, which does not consider the effects of irreversible energy

MEMS tunable grating micro-spectrometer

Science.gov (United States)

Tormen, Maurizio; Lockhart, R.; Niedermann, P.; Overstolz, T.; Hoogerwerf, A.; Mayor, J.-M.; Pierer, J.; Bosshard, C.; Ischer, R.; Voirin, G.; Stanley, R. P.

2017-11-01

The interest in MEMS based Micro-Spectrometers is increasing due to their potential in terms of flexibility as well as cost, low mass, small volume and power savings. This interest, especially in the Near-Infrared and Mid- Infrared, ranges from planetary exploration missions to astronomy, e.g. the search for extra solar planets, as well as to many other terrestrial fields of application such as, industrial quality and surface control, chemical analysis of soil and water, detection of chemical pollutants, exhausted gas analysis, food quality control, process control in pharmaceuticals, to name a few. A compact MEMS-based Spectrometer for Near- Infrared and Mid-InfraRed operation have been conceived, designed and demonstrated. The design based on tunable MEMS blazed grating, developed in the past at CSEM [1], achieves state of the art results in terms of spectral resolution, operational wavelength range, light throughput, overall dimensions, and power consumption.

Micro-Electromechanical-Systems (MEMS) technologies for aerospace applications in Canada

International Nuclear Information System (INIS)

Pimprikar, M.

2001-01-01

During the last decade, research and development of Micro-Electro-Mechanical Systems (MEMS) have shown significant promise for a variety of aerospace applications. The advantages of drastic size and weight reduction of MEMS enables consideration of developing low-cost, high-performance, ultra-portable, MEMS-based devices and systems for aircraft, space and defense requirements. 'Microelectromechanical Systems, or MEMS', are integrated microdevices or systems combining electrical and mechanical components, fabricated using integrated circuit compatible batch-processing techniques, and varying in size from micrometers to millimeters. In the 1990's, MEMS were used as laboratory curiosities with very low power, short lifetimes and few concrete applications. One decade later, MEMS have taken major roles in several industries, the total world market is expected to grow from $14 billion to over $40 billion by the year 2002. A typical device contains micromechanical structures that move by flexing (membranes, cantilevers, springs) and MEMS/MOEMS level where the integration of microelectronics, micromechanics and optics form a complete system (sensor, actuator, photonic device). (author)

Ag Transport Through Non-Irradiated and Irradiated SiC

Energy Technology Data Exchange (ETDEWEB)

Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

2016-01-11

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Ag Transport Through Non-Irradiated and Irradiated SiC

International Nuclear Information System (INIS)

Szlufarska, Izabela; Morgan, Dane; Blanchard, James

2016-01-01

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Evolution of a MEMS Photoacoustic Chemical Sensor

National Research Council Canada - National Science Library

Pellegrino, Paul M; Polcawich, Ronald G

2003-01-01

.... Initial MEMS work is centered on fabrication of a lead zirconate titanate (PZT) microphone subsystem to be incorporated in the full photoacoustic device. Preliminary results were very positive for the macro-photoacoustic cell, PZT membrane microphones design / fabrication and elementary monolithic MEMS photoacoustic cavity.

Preparation and infrared absorption properties of buried SiC layers

International Nuclear Information System (INIS)

Yan Hui; Chen Guanghua; Wong, S.P.; Kwok, R.W.M.

1997-01-01

Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C + ions implanted into Si substrates under different doses. In the present study, the extracted voltage was 50 kV and the ion dose was varied from 3.0 x 10 17 to 1.6 x 10 18 cm -2 . According to infrared absorption measurements, it was fount that the structure of the buried SiC layers depended on the ion dose. Moreover, the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400 degree C with the MEVVA ion source

Three dimensional MEMS supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Sun, Wei

2011-10-15

The overall objective of this research is to achieve compact supercapacitors with high capacitance, large power density, and long cycle life for using as micro power sources to drive low power devices and sensors. The main shortcoming of supercapacitors as a power source is that its energy density typically is about 1/10 of that of batteries. To achieve compact supercapacitors of large energy density, supercapacitors must be developed with high capacitance and power density which are mainly depended on the effective surface area of the electrodes of the supercapacitors. Many studies have been done to increase the effective surface area by modifying the electrode materials, however, much less investigations are focus on machining the electrodes. In my thesis work, micro- and nano-technologies are applied as technology approaches for machining the electrodes with three dimensional (3D) microstructures. More specific, Micro-electro-mechanical system (MEMS) fabrication process flow, which integrates the key process such as LIGA-like (German acronym for Lithographie, Galvanoformung, Abformung, which mean Lithography, Electroplating and Molding) technology or DRIE (deep reactive ion etching), has been developed to enable innovative designs of 3D MEMS supercapacitors which own the electrodes of significantly increased geometric area. Two types of 3D MEMS supercapcitors, based on LIGA-like and DRIE technology respectively, were designed and successfully created. The LIGA-like based 3D MEMS supercapacitor is with an interdigital 3D structure, and consists of silicon substrate, two electroplated nickel current collectors, two PPy (poly pyrrole) electrodes, and solid state electrolyte. The fabrication process flow developed includes the flowing key processes, SU-8 lithography, nickel electroplating, PPy polymerization and solid state electrolyte coating. Electrochemical tests showed that the single electrode of the supercapacitor has the specific capacitance of 0.058 F cm-2

Temperature Dependence of Mechanical Properties of TRISO SiC Coatings

International Nuclear Information System (INIS)

Kim, Do Kyung; Park, Kwi Il; Lee, Hyeon Keun; Seong, Young Hoon; Lee, Seung Jun

2009-04-01

SiC coating layer has been introduced as protective layer in TRISO nuclear fuel particle of high temperature gas cooled reactor (HTGR) due to excellent mechanical stability at high temperature. It is important to study for high temperature stability in SiC coating layers, because TRISO fuel particles were operating at high temperature around 1000 .deg. C. In this study, the nanoindentation test and micro tensile test were conducted in order to measure the mechanical properties of SiC coating layers at elevated temperature. SiC coating film was fabricated on the carbon substrate using chemical vapor deposition process with different microstructures and thicknesses. Nanoindentation test was performed for the analysis of the hardness, modulus and creep properties up to 500 .deg. C. Impression creep method applied to nanoindentation and creep properties of SiC coating layers were characterized by nanoindentation creep test. The fracture strength of SiC coating layers was measured by the micro tensile method at room temperature and 500 .deg. C. From the results, we can conclude that the hardness and fracture strength are decreased with temperature and no significant change in the modulus is observed with increase in temperature. The deformation mechanism for indentation creep and creep rate changes as the testing temperature increased

Tema 8. Principis físics dels semiconductors (Resum)

OpenAIRE

Beléndez Vázquez, Augusto

2011-01-01

Resum del "Tema 8. Principis físics dels semiconductors" de l'assignatura "Fonaments Físics de l'Enginyeria I" de "Grau en Enginyeria en So i Imatge" impartit a l'Escola Politècnica Superior de la Universitat d'Alacant.

Wavelength tunable MEMS VCSELs for OCT imaging

DEFF Research Database (Denmark)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa

2018-01-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III...

GPS/MEMS IMU/Microprocessor Board for Navigation

Science.gov (United States)

Gender, Thomas K.; Chow, James; Ott, William E.

2009-01-01

A miniaturized instrumentation package comprising a (1) Global Positioning System (GPS) receiver, (2) an inertial measurement unit (IMU) consisting largely of surface-micromachined sensors of the microelectromechanical systems (MEMS) type, and (3) a microprocessor, all residing on a single circuit board, is part of the navigation system of a compact robotic spacecraft intended to be released from a larger spacecraft [e.g., the International Space Station (ISS)] for exterior visual inspection of the larger spacecraft. Variants of the package may also be useful in terrestrial collision-detection and -avoidance applications. The navigation solution obtained by integrating the IMU outputs is fed back to a correlator in the GPS receiver to aid in tracking GPS signals. The raw GPS and IMU data are blended in a Kalman filter to obtain an optimal navigation solution, which can be supplemented by range and velocity data obtained by use of (l) a stereoscopic pair of electronic cameras aboard the robotic spacecraft and/or (2) a laser dynamic range imager aboard the ISS. The novelty of the package lies mostly in those aspects of the design of the MEMS IMU that pertain to controlling mechanical resonances and stabilizing scale factors and biases.

Microstructure Of A SIC/(Ti/V/Cr/Sn/Al) Composite

Science.gov (United States)

Lerch, Bradley A.; Hull, David R.; Leonhardt, Todd A.

1990-01-01

NASA technical memorandum reports on analysis of composite material made of SiC fibers in matrix of 0.76 Ti/0.15 V/0.03 Cr/0.03 Sn/0.03 Al (parts by weight) alloy. Purposes of study to investigate suitability of some metallographic techniques for use on composite materials in general and to obtain information about macrostructure and microstructure of this specific composite to provide guidance for experimental and theoretical studies of more advanced composites.

Construction and Initial Validation of the Multiracial Experiences Measure (MEM)

Science.gov (United States)

Yoo, Hyung Chol; Jackson, Kelly; Guevarra, Rudy P.; Miller, Matthew J.; Harrington, Blair

2015-01-01

This article describes the development and validation of the Multiracial Experiences Measure (MEM): a new measure that assesses uniquely racialized risks and resiliencies experienced by individuals of mixed racial heritage. Across two studies, there was evidence for the validation of the 25-item MEM with 5 subscales including Shifting Expressions, Perceived Racial Ambiguity, Creating Third Space, Multicultural Engagement, and Multiracial Discrimination. The 5-subscale structure of the MEM was supported by a combination of exploratory and confirmatory factor analyses. Evidence of criterion-related validity was partially supported with MEM subscales correlating with measures of racial diversity in one’s social network, color-blind racial attitude, psychological distress, and identity conflict. Evidence of discriminant validity was supported with MEM subscales not correlating with impression management. Implications for future research and suggestions for utilization of the MEM in clinical practice with multiracial adults are discussed. PMID:26460977

Calibration of tri-axial MEMS accelerometers in the low-frequency range – Part 2: Uncertainty assessment

Directory of Open Access Journals (Sweden)

G. D'Emilia

2018-05-01

Full Text Available A comparison among three methods for the calibration of tri-axial accelerometers, in particular MEMS, is presented in this paper, paying attention to the uncertainty assessment of each method. The first method is performed according to the ISO 16063 standards. Two innovative methods are analysed, both suitable for in-field application. The effects on the whole uncertainty of the following aspects have been evaluated: the test bench performances in realizing the reference motion, the vibration reference sensor, the geometrical parameters and the data processing techniques. The uncertainty contributions due to the offset and the transverse sensitivity are also studied, by calibrating two different types of accelerometers, a piezoelectric one and a capacitive one, to check their effect on the accuracy of the methods under comparison. The reproducibility of methods is demonstrated. Relative uncertainty of methods ranges from 3 to 5 %, depending on the complexity of the model and of the requested operations. The results appear promising for low-cost calibration of new tri-axial accelerometers of MEMS type.

Recent Progress in Silicon Mems Oscillators

Science.gov (United States)

2008-12-01

MEMS oscillator. As shown, a MEMS resonator is connected to an IC. The reference oscillator, which is basically a transimpedance amplifier ...small size), and (3) DC bias voltage required to operate the resonators. As a result, instead of Colpitts or Pierce architecture, a transimpedence ... amplifier is typically used for sustain the oscillation. The frequency of the resonators is determined by both material properties and geometry of

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said; Sharaf, Abdel Hameed; Serry, Mohamed Yousef; Sedky, Sherif Salah

2014-01-01

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

MEMS mass-spring-damper systems using an out-of-plane suspension scheme

KAUST Repository

Abdel Aziz, Ahmed Kamal Said

2014-02-04

MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) using an out-of-plane (or vertical) suspension scheme, wherein the suspensions are normal to the proof mass, are disclosed. Such out-of-plane suspension scheme helps such MEMS mass-spring-damper systems achieve inertial grade performance. Methods of fabricating out-of-plane suspensions in MEMS mass-spring-damper systems (including MEMS gyroscopes and accelerometers) are also disclosed.

Monitoring System for Slope Stability under Rainfall by using MEMS Acceleration Sensor IC tags

International Nuclear Information System (INIS)

Murakami, S; Dairaku, A; Komine, H; Saito, O; Sakai, N; Isizawa, T; Maruyama, I

2013-01-01

Real-time warning system for slope failure under rainfall is available to disaster prevention and mitigation. Monitoring of multi-point and wireless measurements is effective because it is difficult to conclude the most dangerous part in a slope. The purpose of this study is to propose a method of monitoring system with multi-point and wireless measurements for a slope stability using MEMS acceleration sensor IC tags. MEMS acceleration sensor IC tag is an acceleration sensor microminiaturized by a technology of Micro Electro Mechanical Systems on board IC tag. Especially, low cost of the sensor will yield to the realization of the system. In order to investigate the applicability of the proposed system, a large-scale model test of artificial slope subjected to rainfall has been performed. MEMS acceleration sensor IC tags has been located on the slope and ground acceleration caused by forced vibration has been measured until the model slope collapses. The experimental results show that the MEMS acceleration sensor IC tag is comfortably available under rainfall, the characteristics of ground accelerations varies with changing the condition of the slope subjected to rainfall, and the proposed method can be applied to a real-time monitoring system for slope failure under rainfall.

New dynamic silicon photonic components enabled by MEMS technology

Science.gov (United States)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Power Management of MEMS-Based Storage Devices for Mobile Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

2008-01-01

Because of its small form factor, high capacity, and expected low cost, MEMS-based storage is a suitable storage technology for mobile systems. MEMS-based storage devices should also be energy efficient for deployment in mobile systems. The problem is that MEMS-based storage devices are mechanical,

RF MEMS

Indian Academy of Sciences (India)

At the bare die level the insertion loss, return loss and the isolation ... ing and packaging of a silicon on glass based RF MEMS switch fabricated using DRIE. ..... follows the power law based on the asperity deformation model given by Pattona & ... Surface mount style RF packages (SMX series 580465) from Startedge Corp.

Micro-electro-mechanical systems (MEMS: Technology for the 21st century

Directory of Open Access Journals (Sweden)

Đakov Tatjana A.

2014-01-01

Full Text Available Micro-electro-mechanical systems (MEMS are miniturized devices that can sense the environment, process and analyze information, and respond with a variety of mechanical and electrical actuators. MEMS consists of mechanical elements, sensors, actuators, electrical and electronics devices on a common silicon substrate. Micro-electro-mechanical systems are becoming a vital technology for modern society. Some of the advantages of MEMS devices are: very small size, very low power consumption, low cost, easy to integrate into systems or modify, small thermal constant, high resistance to vibration, shock and radiation, batch fabricated in large arrays, improved thermal expansion tolerance. MEMS technology is increasingly penetrating into our lives and improving quality of life, similar to what we experienced in the microelectronics revolution. Commercial opportunities for MEMS are rapidly growing in broad application areas, including biomedical, telecommunication, security, entertainment, aerospace, and more in both the consumer and industrial sectors on a global scale. As a breakthrough technology, MEMS is building synergy between previously unrelated fields such as biology and microelectronics. Many new MEMS and nanotechnology applications will emerge, expanding beyond that which is currently identified or known. MEMS are definitely technology for 21st century.

The SiC hardware of the Sentinel-2 multi spectral instrument

Science.gov (United States)

Bougoin, Michel; Lavenac, Jérôme

2017-11-01

The Sentinel-2 mission is a major part of the GMES (Global Monitoring for Environment and Security) program which has been set up by the European Union, on a joint initiative with the European Space Agency. A pair of identical satellites will observe the earth from a sun-synchronous orbit at 786 km altitude. Astrium is the prime contractor of the satellites and their payload. The MultiSpectral Instrument features a "all-SiC" TMA (Three Mirror Anastygmat) telescope. MSI will provide optical images in 13 spectral bands, in the visible and also the near infra-red range, with a 10 to 60 m resolution and a 290 km wide swath. The Boostec® SiC material is used mainly for its high specific stiffness (Youngs modulus / density) and its high thermal stability (thermal conductivity / coefficient of thermal expansion) which allow to reduce the distortions induced by thermo-elastic stresses. Its high mechanical properties as well as the relevant technology enable to make not only the mirrors but also the structure which holds them and the elements of the focal plane (including some detectors packaging). Due to the required large size, accuracy and shape complexity, developing and manufacturing some of these SiC parts required innovative manufacturing approach. It is reviewed in the present paper.

RF-MEMS capacitive switches with high reliability

Science.gov (United States)

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

Science.gov (United States)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Fabrication of integrated metallic MEMS devices

DEFF Research Database (Denmark)

Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

2002-01-01

A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators are characteri......A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

Liquid Metal Droplet and Micro Corrugated Diaphragm RF-MEMS for reconfigurable RF filters

Science.gov (United States)

Irshad, Wasim

Widely Tunable RF Filters that are small, cost-effective and offer ultra low power consumption are extremely desirable. Indeed, such filters would allow drastic simplification of RF front-ends in countless applications from cell phones to satellites in space by replacing switched-array of static acoustic filters and YIG filters respectively. Switched array of acoustic filters are de facto means of channel selection in mobile applications such as cell phones. SAW and BAW filters satisfy most criteria needed by mobile applications such as low cost, size and power consumption. However, the trade-off is a significant loss of 3-4 dB in modern cell phone RF front-end. This leads to need for power-hungry amplifiers and short battery life. It is a necessary trade-off since there are no better alternatives. These devices are in mm scale and consume mW. YIG filters dominate applications where size or power is not a constraint but demand excellent RF performance like low loss and high tuning ratio. These devices are measured in inches and require several watts to operate. Clearly, a tunable RF filter technology that would combine the cost, size and power consumption benefits of acoustic filters with excellent RF performance of YIG filters would be extremely desirable and imminently useful. The objective of this dissertation is to develop such a technology based upon RF-MEMS Evanescent-mode cavity filter. Two highly novel RF-MEMS devices have been developed over the course of this PhD to address the unique MEMS needs of this technology. The first part of the dissertation is dedicated to introducing the fundamental concepts of tunable cavity resonators and filters. This includes the physics behind it, key performance metrics and what they depend on and requirements of the MEMS tuners. Initial gap control and MEMS attachment method are identified as potential hurdles towards achieving very high RF performance. Simple and elegant solutions to both these issues are discussed in

Low dose irradiation performance of SiC interphase SiC/SiC composites

International Nuclear Information System (INIS)

Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

1998-01-01

Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

Nonlinear Adaptive Filter for MEMS Gyro Error Cancellation

Data.gov (United States)

National Aeronautics and Space Administration — Thermal biases are the dominate error in low-cost low-power small MEMS gyros. CubeSats often can't afford the power/mass to put a heater on their MEMS gyros and...

Cost-Efficient Wafer-Level Capping for MEMS and Imaging Sensors by Adhesive Wafer Bonding

Directory of Open Access Journals (Sweden)

Simon J. Bleiker

2016-10-01

Full Text Available Device encapsulation and packaging often constitutes a substantial part of the fabrication cost of micro electro-mechanical systems (MEMS transducers and imaging sensor devices. In this paper, we propose a simple and cost-effective wafer-level capping method that utilizes a limited number of highly standardized process steps as well as low-cost materials. The proposed capping process is based on low-temperature adhesive wafer bonding, which ensures full complementary metal-oxide-semiconductor (CMOS compatibility. All necessary fabrication steps for the wafer bonding, such as cavity formation and deposition of the adhesive, are performed on the capping substrate. The polymer adhesive is deposited by spray-coating on the capping wafer containing the cavities. Thus, no lithographic patterning of the polymer adhesive is needed, and material waste is minimized. Furthermore, this process does not require any additional fabrication steps on the device wafer, which lowers the process complexity and fabrication costs. We demonstrate the proposed capping method by packaging two different MEMS devices. The two MEMS devices include a vibration sensor and an acceleration switch, which employ two different electrical interconnection schemes. The experimental results show wafer-level capping with excellent bond quality due to the re-flow behavior of the polymer adhesive. No impediment to the functionality of the MEMS devices was observed, which indicates that the encapsulation does not introduce significant tensile nor compressive stresses. Thus, we present a highly versatile, robust, and cost-efficient capping method for components such as MEMS and imaging sensors.

Waveguide-Integrated MEMS Concepts for Tunable Millimeter-Wave Systems

OpenAIRE

Baghchehsaraei, Zargham

2014-01-01

This thesis presents two families of novel waveguide-integrated components based on millimeter-wave microelectromechanical systems (MEMS) for reconfigurable systems. The first group comprises V-band (50–75 GHz) and W-band (75–110 GHz) waveguide switches and switchable irises, and their application as switchable cavity resonators, and tunable bandpass filters implemented by integration of novel MEMS-reconfigurable surfaces into a rectangular waveguide. The second category comprises MEMS-based ...

An Extension of SIC Predictions to the Wiener Coactive Model.

Science.gov (United States)

Houpt, Joseph W; Townsend, James T

2011-06-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

MEMS (Micro-Electro-Mechanical Systems) for Automotive and Consumer Electronics

Science.gov (United States)

Marek, Jiri; Gómez, Udo-Martin

MEMS sensors gained over the last two decades an impressive width of applications: (a) ESP: A car is skidding and stabilizes itself without driver intervention (b) Free-fall detection: A laptop falls to the floor and protects the hard drive by parking the read/write drive head automatically before impact. (c) Airbag: An airbag fires before the driver/occupant involved in an impending automotive crash impacts the steering wheel, thereby significantly reducing physical injury risk. MEMS sensors are sensing the environmental conditions and are giving input to electronic control systems. These crucial MEMS sensors are making system reactions to human needs more intelligent, precise, and at much faster reaction rates than humanly possible. Important prerequisites for the success of sensors are their size, functionality, power consumption, and costs. This technical progress in sensor development is realized by micro-machining. The development of these processes was the breakthrough to industrial mass-production for micro-electro-mechanical systems (MEMS). Besides leading-edge micromechanical processes, innovative and robust ASIC designs, thorough simulations of the electrical and mechanical behaviour, a deep understanding of the interactions (mainly over temperature and lifetime) of the package and the mechanical structures are needed. This was achieved over the last 20 years by intense and successful development activities combined with the experience of volume production of billions of sensors. This chapter gives an overview of current MEMS technology, its applications and the market share. The MEMS processes are described, and the challenges of MEMS, compared to standard IC fabrication, are discussed. The evolution of MEMS requirements is presented, and a short survey of MEMS applications is shown. Concepts of newest inertial sensors for ESP-systems are given with an emphasis on the design concepts of the sensing element and the evaluation circuit for achieving

Identification of Capacitive MEMS Accelerometer Structure Parameters for Human Body Dynamics Measurements

Directory of Open Access Journals (Sweden)

Vincas Benevicius

2013-08-01

Full Text Available Due to their small size, low weight, low cost and low energy consumption, MEMS accelerometers have achieved great commercial success in recent decades. The aim of this research work is to identify a MEMS accelerometer structure for human body dynamics measurements. Photogrammetry was used in order to measure possible maximum accelerations of human body parts and the bandwidth of the digital acceleration signal. As the primary structure the capacitive accelerometer configuration is chosen in such a way that sensing part measures on all three axes as it is 3D accelerometer and sensitivity on each axis is equal. Hill climbing optimization was used to find the structure parameters. Proof-mass displacements were simulated for all the acceleration range that was given by the optimization problem constraints. The final model was constructed in Comsol Multiphysics. Eigenfrequencies were calculated and model’s response was found, when vibration stand displacement data was fed into the model as the base excitation law. Model output comparison with experimental data was conducted for all excitation frequencies used during the experiments.

Modularly Integrated MEMS Technology

National Research Council Canada - National Science Library

Eyoum, Marie-Angie N

2006-01-01

Process design, development and integration to fabricate reliable MEMS devices on top of VLSI-CMOS electronics without damaging the underlying circuitry have been investigated throughout this dissertation...

Synthesis of micro-sized interconnected Si-C composites

Science.gov (United States)

Wang, Donghai; Yi, Ran; Dai, Fang

2016-02-23

Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

The effect of SiC particle size on the properties of Cu–SiC composites

International Nuclear Information System (INIS)

Celebi Efe, G.; Zeytin, S.; Bindal, C.

2012-01-01

Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

MEMS for pico- to micro-satellites

OpenAIRE

Shea, Herbert

2009-01-01

MEMS sensors, actuators, and sub-systems can enable an important reduction in the size and mass of spacecrafts, first by replacing larger and heavier components, then by replacing entire subsystems, and finally by enabling the microfabrication of highly integrated picosats. Very small satellites (1 to 100 kg) stand to benefit the most from MEMS technologies. These small satellites are typically used for science or technology demonstration missions, with higher risk tolerance than multi-ton te...

InP-based photonic integrated circuit platform on SiC wafer.

Science.gov (United States)

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Factors affecting the corrosion of SiC layer by fission product palladium

International Nuclear Information System (INIS)

Dewita, E.

2000-01-01

HTR is one of the advanced nuclear reactors which has inherent safety system, graphite moderated and helium gas cooled. In general, these reactors are designed with the TRISO coated particle consist of four coating layers that are porous pyrolytic carbon (PyC). inner dense PyC (IPyC), silicon carbide (SiC), and outer dense PyC (OPyC). Among the four coating layers, the SiC plays an important role beside in retaining metallic fission products, it also provides mechanical strength to fuel particle. However, results of post irradiation examination indicate that fission product palladium can react with and corrode SiC layer, This assessment is conducted to get the comprehension about resistance of SiC layer on irradiation effects, especially in order to increase the fuel bum-up. The result of this shows that the corrosion of SiC layer by fission product palladium is beside depend on the material characteristics of SiC, and also there are other factors that affect on the SiC layer corrosion. Fuel enrichment, bum-up, and irradiation time effect on the palladium flux in fuel kernel. While, the fuel density, vapour pressure of palladium (the degree depend on the irradiation temperature and kernel composition) effect on palladium migration in fuel particle. (author)

SiC fibre by chemical vapour deposition on tungsten filament

Indian Academy of Sciences (India)

Unknown

SiC fibre by chemical vapour deposition on tungsten filament ... CMCs), in defence and industrial applications. SiC has attractive ... porosity along with chemical purity. This is lacking .... reactor. Since mercury is very toxic it should be removed.

The annealing effects on irradiated SiC piezo resistive pressure sensor

International Nuclear Information System (INIS)

Almaz, E.; Blue, T. E.; Zhang, P.

2009-01-01

The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

Recent progress of ultrahigh voltage SiC devices for particle accelerator

International Nuclear Information System (INIS)

Fukuda, Kenji; Tsuji, Takashi; Shiomi, Hiromu; Mizushima, Tomonori; Yonezawa, Yoshiyuki; Kondo, Chikara; Otake, Yuji

2016-01-01

Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)

MEMS Solar Generators

OpenAIRE

Grbovic, Dragoslav; Osswald, Sebastian

2011-01-01

Approved for public release; distribution is unlimited Using MEMS bimaterial structures to build highly efficient solar energy generators. This is a novel approach that utilizes developments in the area of bimaterial sensors and applies them in the field of solar energy harvesting.

Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic

International Nuclear Information System (INIS)

Reau, A.

2008-01-01

Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC f /SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC f /SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

Energy Technology Data Exchange (ETDEWEB)

Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

2016-09-15

Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

MEMS for Tunable Photonic Metamaterial Applications

Science.gov (United States)

Stark, Thomas

Photonic metamaterials are materials whose optical properties are derived from artificially-structured sub-wavelength unit cells, rather than from the bulk properties of the constituent materials. Examples of metamaterials include plasmonic materials, negative index materials, and electromagnetic cloaks. While advances in simulation tools and nanofabrication methods have allowed this field to grow over the past several decades, many challenges still exist. This thesis addresses two of these challenges: fabrication of photonic metamaterials with tunable responses and high-throughput nanofabrication methods for these materials. The design, fabrication, and optical characterization of a microelectromechanical systems (MEMS) tunable plasmonic spectrometer are presented. An array of holes in a gold film, with plasmon resonance in the mid-infrared, is suspended above a gold reflector, forming a Fabry-Perot interferometer of tunable length. The spectra exhibit the convolution of extraordinary optical transmission through the holes and Fabry-Perot resonances. Using MEMS, the interferometer length is modulated from 1.7 mum to 21.67 mum , thereby tuning the free spectral range from about 2900 wavenumbers to 230.7 wavenumbers and shifting the reflection minima and maxima across the infrared. Due to its broad spectral tunability in the fingerprint region of the mid-infrared, this device shows promise as a tunable biological sensing device. To address the issue of high-throughput, high-resolution fabrication of optical metamaterials, atomic calligraphy, a MEMS-based dynamic stencil lithography technique for resist-free fabrication of photonic metamaterials on unconventional substrates, has been developed. The MEMS consists of a moveable stencil, which can be actuated with nanometer precision using electrostatic comb drive actuators. A fabrication method and flip chip method have been developed, enabling evaporation of metals through the device handle for fabrication on an

Tribo-functionalizing Si and SU8 materials by surface modification for application in MEMS/NEMS actuator-based devices

International Nuclear Information System (INIS)

Singh, R A; Satyanarayana, N; Sinha, S K; Kustandi, T S

2011-01-01

Micro/nano-electro-mechanical-systems (MEMS/NEMS) are miniaturized devices built at micro/nanoscales. At these scales, the surface/interfacial forces are extremely strong and they adversely affect the smooth operation and the useful operating lifetimes of such devices. When these forces manifest in severe forms, they lead to material removal and thereby reduce the wear durability of the devices. In this paper, we present a simple, yet robust, two-step surface modification method to significantly enhance the tribological performance of MEMS/NEMS materials. The two-step method involves oxygen plasma treatment of polymeric films and the application of a nanolubricant, namely perfluoropolyether. We apply the two-step method to the two most important MEMS/NEMS structural materials, namely silicon and SU8 polymer. On applying surface modification to these materials, their initial coefficient of friction reduces by ∼4-7 times and the steady-state coefficient of friction reduces by ∼2.5-3.5 times. Simultaneously, the wear durability of both the materials increases by >1000 times. The two-step method is time effective as each of the steps takes the time duration of approximately 1 min. It is also cost effective as the oxygen plasma treatment is a part of the MEMS/NEMS fabrication process. The two-step method can be readily and easily integrated into MEMS/NEMS fabrication processes. It is anticipated that this method will work for any kind of structural material from which MEMS/NEMS are or can be made.

Tribo-functionalizing Si and SU8 materials by surface modification for application in MEMS/NEMS actuator-based devices

Science.gov (United States)

Singh, R. A.; Satyanarayana, N.; Kustandi, T. S.; Sinha, S. K.

2011-01-01

Micro/nano-electro-mechanical-systems (MEMS/NEMS) are miniaturized devices built at micro/nanoscales. At these scales, the surface/interfacial forces are extremely strong and they adversely affect the smooth operation and the useful operating lifetimes of such devices. When these forces manifest in severe forms, they lead to material removal and thereby reduce the wear durability of the devices. In this paper, we present a simple, yet robust, two-step surface modification method to significantly enhance the tribological performance of MEMS/NEMS materials. The two-step method involves oxygen plasma treatment of polymeric films and the application of a nanolubricant, namely perfluoropolyether. We apply the two-step method to the two most important MEMS/NEMS structural materials, namely silicon and SU8 polymer. On applying surface modification to these materials, their initial coefficient of friction reduces by ~4-7 times and the steady-state coefficient of friction reduces by ~2.5-3.5 times. Simultaneously, the wear durability of both the materials increases by >1000 times. The two-step method is time effective as each of the steps takes the time duration of approximately 1 min. It is also cost effective as the oxygen plasma treatment is a part of the MEMS/NEMS fabrication process. The two-step method can be readily and easily integrated into MEMS/NEMS fabrication processes. It is anticipated that this method will work for any kind of structural material from which MEMS/NEMS are or can be made.

Uncertainty quantification in capacitive RF MEMS switches

Science.gov (United States)

Pax, Benjamin J.

Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward

Optical MEMS for earth observation payloads

Science.gov (United States)

Rodrigues, B.; Lobb, D. R.; Freire, M.

2017-11-01

An ESA study has been taken by Lusospace Ltd and Surrey Satellite Techonoly Ltd (SSTL) into the use of optical Micro Eletro-Mechanical Systems (MEMS) for earth Observation. A review and analysis was undertaken of the Micro-Optical Electro-Mechanical Systems (MOEMS) available in the market with potential application in systems for Earth Observation. A summary of this review will be presented. Following the review two space-instrument design concepts were selected for more detailed analysis. The first was the use of a MEMS device to remove cloud from Earth images. The concept is potentially of interest for any mission using imaging spectrometers. A spectrometer concept was selected and detailed design aspects and benefits evaluated. The second concept developed uses MEMS devices to control the width of entrance slits of spectrometers, to provide variable spectral resolution. This paper will present a summary of the results of the study.

Transformation from amorphous to nano-crystalline SiC thin films ...

Indian Academy of Sciences (India)

Administrator

phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

MEMS applications in space exploration

Science.gov (United States)

Tang, William C.

1997-09-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. MEMS is one of the key enabling technology to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Adaptive UAV Attitude Estimation Employing Unscented Kalman Filter, FOAM and Low-Cost MEMS Sensors

NARCIS (Netherlands)

Garcia de Marina Peinado, Hector; Espinosa, Felipe; Santos, Carlos

2012-01-01

Navigation employing low cost MicroElectroMechanical Systems (MEMS) sensors in Unmanned Aerial Vehicles (UAVs) is an uprising challenge. One important part of this navigation is the right estimation of the attitude angles. Most of the existent algorithms handle the sensor readings in a fixed way,

TiC/Ti3SiC2复合材料的制备及其性能研究%Preparation and properties of TiC/Ti3SiC2 composites

Institute of Scientific and Technical Information of China (English)

贾换; 尹洪峰; 袁蝴蝶; 杨祎诺

2012-01-01

以粉末Ti,Si,TiC和炭黑为原料,采用反应热压烧结法制备TiC/Ti3SiC2复合材料.借助XRD和SEM研究TiC含量对TiC/Ti3SiC2复合材料相组成、显微结构及力学特性的影响.结果表明:通过热压烧结可以得到致密度较高的TiC/Ti3SiC2复合材料；引入TiC可以促进Ti3SiC2的生成,当引入TiC的质量分数达30％,TiC/Ti3SiC2复合材料的弯曲强度和断裂韧性分别为406.9 MPa,3.7 MPa·m1/2；复合材料中Ti3SiC2相以穿晶断裂为主,TiC晶粒易产生拔出.%TiC/Ti3SiC2 composites were fabricated by reactive hot pressing sintering method using the mixture powder of Ti, Si, C and TiC as raw material. The effect of TiC content on phase composition, microstructure and mechanical properties of TiC/Ti3SiC2 composites was investigated by X-ray diffraction and scanning electron microscopy. The results demonstrate that dense TiC/ Ti3SiC2 composites can be obtained by hot pressing. The addition of TiC into composites can enhance the formation of TisSiC2. When the additional content of TiC reaches 30% (mass fraction) , the flexural strength and fracture toughness of TiC/Ti3SiC2 composite are 406.9 MPa and 3.7 MPa·m-2, respectively. Ti3SiC2 phase displays intergranular fracture and TiC grain pulls out from Ti3SiC2 matrix when TiC/Ti3SiC2 composite fractures.

PolyMEMS Actuator: A Polymer-Based Microelectromechanical (MEMS) Actuator with Macroscopic Action

Science.gov (United States)

2002-09-01

DIRECTOR: MICHAEL L. TALBERT, Maj., USAF Technical Advisor , Information Technology Division Information Directorate...technologies meet even two of the four requirements, whereas PolyMEMS meets all four. Robo -Lobster Courtesy of Dr. Joseph Ayers, Northeastern

MEMS: A new approach to micro-optics

Energy Technology Data Exchange (ETDEWEB)

Sniegowski, J.J.

1997-12-31

MicroElectroMechanical Systems (MEMS) and their fabrication technologies provide great opportunities for application to micro-optical systems (MOEMS). Implementing MOEMS technology ranges from simple, passive components to complicated, active systems. Here, an overview of polysilicon surface micromachining MEMS combined with optics is presented. Recent advancements to the technology, which may enhance its appeal for micro-optics applications are emphasized. Of all the MEMS fabrication technologies, polysilicon surface micromachining technology has the greatest basis in and leverages the most the infrastructure for silicon integrated circuit fabrication. In that respect, it provides the potential for very large volume, inexpensive production of MOEMS. This paper highlights polysilicon surface micromachining technology in regards to its capability to provide both passive and active mechanical elements with quality optical elements.

Fission-product SiC reaction in HTGR fuel

International Nuclear Information System (INIS)

Montgomery, F.

1981-01-01

The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels

SiC substrate defects and III-N heteroepitaxy

Energy Technology Data Exchange (ETDEWEB)

Poust, B D [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Koga, T S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Sandhu, R [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Heying, B [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Hsing, R [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Wojtowicz, M [Northrop Grumman Space Technology, Space and Electronics Group, Redondo Beach, CA 90278 (United States); Khan, A [Department of Electrical Engineering, University of South Carolina, Columbia, SC (United States); Goorsky, M S [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States)

2003-05-21

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuK{alpha} radiation ({lambda} = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10{sup -7}. The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from {approx}100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were {approx}20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established.

SiC substrate defects and III-N heteroepitaxy

International Nuclear Information System (INIS)

Poust, B D; Koga, T S; Sandhu, R; Heying, B; Hsing, R; Wojtowicz, M; Khan, A; Goorsky, M S

2003-01-01

This study addressed how defects in SiC substrates influence the crystallographic properties of AlGaN/GaN layers deposited by metallorganic vapour phase epitaxy and by molecular beam epitaxy. We employed double crystal reflection x-ray topography using symmetric (0008) and (00012) reflections with CuKα radiation (λ = 1.54 A) to image dislocations, micropipes, and low angle boundaries in SiC substrates. Lattice strain near the core of a micropipe defect was estimated to be of the order of 10 -7 . The substrates investigated exhibited radial patterns of strain and, primarily, of tilt of the order of tens of arcsec. After deposition of the AlGaN and GaN layers, DCXRT images were generated from the substrate (0008) or (00012) and GaN epitaxial layer (0004) reflections. Full-width at half-maximum values ranging from ∼100 to 300 arcsec were typical of the GaN reflections, while those of the 4H-SiC reflections were ∼20-70 arcsec. Micropipes, tilt boundaries, and inclusions in the SiC were shown to produce structural defects in the GaN layers. A clear correlation between SiC substrate defects and GaN defects has been established

A Grande Reportagem no contexto informativo SIC

OpenAIRE

Colaço, Vanessa Alexandra Francisco

2014-01-01

Os telespectadores querem ver grandes reportagens? Como evoluíram as audiências da Grande Reportagem SIC? É este o produto premium da estação? Terá este formato um investimento e continuidade garantidas? Estas são algumas das questões formuladas e às quais se procurou dar resposta neste Relatório de Estágio. Neste trabalho traça-se o perfil do programa Grande Reportagem SIC, clarificando a linha editorial que lhe serviu de base, procurando perceber as suas dinâmicas e passando em revista mome...

Defects induced by helium implantation in SiC

International Nuclear Information System (INIS)

Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

2008-01-01

SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

SiC nanocrystals as Pt catalyst supports for fuel cell applications

DEFF Research Database (Denmark)

Dhiman, Rajnish; Morgen, Per; Skou, E.M.

2013-01-01

A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... on the nanocrystals of SiC-SPR and SiC-NS by the polyol method. The SiC substrates are subjected to an acid treatment to introduce the surface groups, which help to anchor the Pt nano-catalysts. These SiC based catalysts have been found to have a higher electrochemical activity than commercially available Vulcan...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications....

Nano-tribology and materials in MEMS

CERN Document Server

Satyanarayana, N; Lim, Seh

2013-01-01

This book brings together recent developments in the areas of MEMS tribology, novel lubricants and coatings for nanotechnological applications, biomimetics in tribology and fundamentals of micro/nano-tribology. Tribology plays important roles in the functioning and durability of machines at small length scales because of the problems associated with strong surface adhesion, friction, wear etc. Recently, a number of studies have been conducted to understand tribological phenomena at nano/micro scales and many new tribological solutions for MEMS have been proposed.

Review of Automated Design and Optimization of MEMS

DEFF Research Database (Denmark)

Achiche, Sofiane; Fan, Zhun; Bolognini, Francesca

2007-01-01

carried out. This paper presents a review of these techniques. The design task of MEMS is usually divided into four main stages: System Level, Device Level, Physical Level and the Process Level. The state of the art o automated MEMS design in each of these levels is investigated....

A memória social do estado novo em duas gerações

Directory of Open Access Journals (Sweden)

Denis Giovani Monteiro Naiff

Full Text Available No decorrer das últimas duas décadas, um bom número de perspectivas teóricas e de pesquisas empíricas tem procurado resgatar os aspectos psicossociais presentes na memória humana. O presente trabalho tem por objetivo descrever e comparar as memórias que duas diferentes gerações na população do Rio de Janeiro guardam sobre o período compreendido pela ditadura do Estado Novo. A amostra contou com 400 sujeitos, sendo 200 idosos e 200 adultos, aos quais foi aplicado um questionário que abordava diferentes aspectos do período supracitado. Os resultados mostram uma lembrança mais forte e detalhada do período na amostra idosa do que na adulta e nos sujeitos de nível educacional mais elevado e com orientação política definida. Conclui-se que os resultados corroboram a hipótese de que os acontecimentos políticos são mais retidos na memória da geração que os tenha testemunhado durante a juventude e principalmente por parte dos seus segmentos mais escolarizados e politizados.

Polishing, coating and integration of SiC mirrors for space telescopes

Science.gov (United States)

Rodolfo, Jacques

2017-11-01

In the last years, the technology of SiC mirrors took an increasingly significant part in the field of space telescopes. Sagem is involved in the JWST program to manufacture and test the optical components of the NIRSpec instrument. The instrument is made of 3 TMAs and 4 plane mirrors made of SiC. Sagem is in charge of the CVD cladding, the polishing, the coating of the mirrors and the integration and testing of the TMAs. The qualification of the process has been performed through the manufacturing and testing of the qualification model of the FOR TMA. This TMA has shown very good performances both at ambient and during the cryo test. The polishing process has been improved for the manufacturing of the flight model. This improvement has been driven by the BRDF performance of the mirror. This parameter has been deeply analysed and a model has been built to predict the performance of the mirrors. The existing Dittman model have been analysed and found to be optimistic.

Stress Wave attenuation in SiC3D/Al Composite

International Nuclear Information System (INIS)

Yuan Chunyuan; Wang Yangwei; Li Guoju; Zhang Xu; Gao Jubin

2013-01-01

SiC 3D /Al composite is a kind of special composite with interpenetrating network microstructure. The attenuation properties of stress wave propagation along the SiC 3D /Al composite are studied by a Split Hopkinson Pressure Bar system and FEM simulations, and the attenuation mechanism is discussed in this paper. Results show that the attenuation rate of the stress wave in the composite is up to 1.73MPa·mm −1 . The reduction of the amplitude of waves is caused by that plenty of interfaces between SiC and Al within the composite acting with stress waves. When the incident plane wave reaches the SiC 3D /Al interface, reflection wave and transmission wave propagates in different directions along the irregular interface between SiC phase and aluminium phase due to the impedance mismatch of them, which leads to the divergence of stress wave. At the same time, some stress micro-focuses occurs in the aluminium phase for the complex wave superimposition, and some plastic deformation may take place within such micro-regions, which results in the consumption of stress wave energy. In conclusion, the stress wave attenuation is derived from divergence and consumption of stress wave.

MEMS Micro-Valve for Space Applications

Science.gov (United States)

Chakraborty, I.; Tang, W. C.; Bame, D. P.; Tang, T. K.

1998-01-01

We report on the development of a Micro-ElectroMechanical Systems (MEMS) valve that is designed to meet the rigorous performance requirements for a variety of space applications, such as micropropulsion, in-situ chemical analysis of other planets, or micro-fluidics experiments in micro-gravity. These systems often require very small yet reliable silicon valves with extremely low leak rates and long shelf lives. Also, they must survive the perils of space travel, which include unstoppable radiation, monumental shock and vibration forces, as well as extreme variations in temperature. Currently, no commercial MEMS valve meets these requirements. We at JPL are developing a piezoelectric MEMS valve that attempts to address the unique problem of space. We begin with proven configurations that may seem familiar. However, we have implemented some major design innovations that should produce a superior valve. The JPL micro-valve is expected to have an extremely low leak rate, limited susceptibility to particulates, vibration or radiation, as well as a wide operational temperature range.

Radioisotope Power Sources for MEMS Devices,

International Nuclear Information System (INIS)

Blanchard, J.P.

2001-01-01

Microelectromechanical systems (MEMS) comprise a rapidly expanding research field with potential applications varying from sensors in airbags to more recent optical applications. Depending on the application, these devices often require an on-board power source for remote operation, especially in cases requiring operation for an extended period of time. Previously suggested power sources include fossil fuels and solar energy, but nuclear power sources may provide significant advantages for certain applications. Hence, the objective of this study is to establish the viability of using radioisotopes to power realistic MEMS devices. A junction-type battery was constructed using silicon and a 63 Ni liquid source. A source volume containing 64 microCi provided a power of ∼0.07 nW. A more novel application of nuclear sources for MEMS applications involves the creation of a resonator that is driven by charge collection in a cantilever beam. Preliminary results have established the feasibility of this concept, and future work will optimize the design for various applications

Mathematical analysis of partial differential equations modeling electrostatic MEMS

CERN Document Server

Esposito, Pierpaolo; Guo, Yujin

2010-01-01

Micro- and nanoelectromechanical systems (MEMS and NEMS), which combine electronics with miniature-size mechanical devices, are essential components of modern technology. It is the mathematical model describing "electrostatically actuated" MEMS that is addressed in this monograph. Even the simplified models that the authors deal with still lead to very interesting second- and fourth-order nonlinear elliptic equations (in the stationary case) and to nonlinear parabolic equations (in the dynamic case). While nonlinear eigenvalue problems-where the stationary MEMS models fit-are a well-developed

Effect of SiC particles on microarc oxidation process of magnesium matrix composites

International Nuclear Information System (INIS)

Wang, Y.Q.; Wang, X.J.; Gong, W.X.; Wu, K.; Wang, F.H.

2013-01-01

SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiC p /AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage–time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO 2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO 2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiC p /AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

Biomimetic synthesis of cellular SiC based ceramics from plant ...

Indian Academy of Sciences (India)

Unknown

SiC based materials so derived can be used in structural applications and in designing high temperature filters and catalyst supports. Keywords. Biomimetic synthesis; carbonaceous biopreform; biomorphic Si–SiC ceramic composites; porous cellular SiC ceramics. 1. Introduction. In recent years, there has been tremendous ...

Reliability Concerns for Flying SiC Power MOSFETs in Space

Science.gov (United States)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J-M

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Ball driven type MEMS SAD for artillery fuse

International Nuclear Information System (INIS)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition. (paper)

Ball driven type MEMS SAD for artillery fuse

Science.gov (United States)

Seok, Jin Oh; Jeong, Ji-hun; Eom, Junseong; Lee, Seung S.; Lee, Chun Jae; Ryu, Sung Moon; Oh, Jong Soo

2017-01-01

The SAD (safety and arming device) is an indispensable fuse component that ensures safe and reliable performance during the use of ammunition. Because the application of electronic devices for smart munitions is increasing, miniaturization of the SAD has become one of the key issues for next-generation artillery fuses. Based on MEMS technology, various types of miniaturized SADs have been proposed and fabricated. However, none of them have been reported to have been used in actual munitions due to their lack of high impact endurance and complicated explosive train arrangements. In this research, a new MEMS SAD using a ball driven mechanism, is successfully demonstrated based on a UV LIGA (lithography, electroplating and molding) process. Unlike other MEMS SADs, both high impact endurance and simple structure were achieved by using a ball driven mechanism. The simple structural design also simplified the fabrication process and increased the processing yield. The ball driven type MEMS SAD performed successfully under the desired safe and arming conditions of a spin test and showed fine agreement with the FEM simulation result, conducted prior to its fabrication. A field test was also performed with a grenade launcher to evaluate the SAD performance in the firing environment. All 30 of the grenade samples equipped with the proposed MEMS SAD operated successfully under the high-G setback condition.

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

As a field, Microelectromechanical Systems (MEMS) has matured over the last two decades to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of ...

A dynamic system matching technique for improving the accuracy of MEMS gyroscopes

Energy Technology Data Exchange (ETDEWEB)

Stubberud, Peter A., E-mail: stubber@ee.unlv.edu [Department of Electrical and Computer Engineering, University of Nevada, Las Vegas, Las Vegas, NV 89154 (United States); Stubberud, Stephen C., E-mail: scstubberud@ieee.org [Oakridge Technology, San Diego, CA 92121 (United States); Stubberud, Allen R., E-mail: stubberud@att.net [Department of Electrical Engineering and Computer Science, University of California, Irvine, Irvine, CA 92697 (United States)

2014-12-10

A classical MEMS gyro transforms angular rates into electrical values through Euler's equations of angular rotation. Production models of a MEMS gyroscope will have manufacturing errors in the coefficients of the differential equations. The output signal of a production gyroscope will be corrupted by noise, with a major component of the noise due to the manufacturing errors. As is the case of the components in an analog electronic circuit, one way of controlling the variability of a subsystem is to impose extremely tight control on the manufacturing process so that the coefficient values are within some specified bounds. This can be expensive and may even be impossible as is the case in certain applications of micro-electromechanical (MEMS) sensors. In a recent paper [2], the authors introduced a method for combining the measurements from several nominally equal MEMS gyroscopes using a technique based on a concept from electronic circuit design called dynamic element matching [1]. Because the method in this paper deals with systems rather than elements, it is called a dynamic system matching technique (DSMT). The DSMT generates a single output by randomly switching the outputs of several, nominally identical, MEMS gyros in and out of the switch output. This has the effect of 'spreading the spectrum' of the noise caused by the coefficient errors generated in the manufacture of the individual gyros. A filter can then be used to eliminate that part of the spread spectrum that is outside the pass band of the gyro. A heuristic analysis in that paper argues that the DSMT can be used to control the effects of the random coefficient variations. In a follow-on paper [4], a simulation of a DSMT indicated that the heuristics were consistent. In this paper, analytic expressions of the DSMT noise are developed which confirm that the earlier conclusions are valid. These expressions include the various DSMT design parameters and, therefore, can be used as design

A dynamic system matching technique for improving the accuracy of MEMS gyroscopes

International Nuclear Information System (INIS)

Stubberud, Peter A.; Stubberud, Stephen C.; Stubberud, Allen R.

2014-01-01

A classical MEMS gyro transforms angular rates into electrical values through Euler's equations of angular rotation. Production models of a MEMS gyroscope will have manufacturing errors in the coefficients of the differential equations. The output signal of a production gyroscope will be corrupted by noise, with a major component of the noise due to the manufacturing errors. As is the case of the components in an analog electronic circuit, one way of controlling the variability of a subsystem is to impose extremely tight control on the manufacturing process so that the coefficient values are within some specified bounds. This can be expensive and may even be impossible as is the case in certain applications of micro-electromechanical (MEMS) sensors. In a recent paper [2], the authors introduced a method for combining the measurements from several nominally equal MEMS gyroscopes using a technique based on a concept from electronic circuit design called dynamic element matching [1]. Because the method in this paper deals with systems rather than elements, it is called a dynamic system matching technique (DSMT). The DSMT generates a single output by randomly switching the outputs of several, nominally identical, MEMS gyros in and out of the switch output. This has the effect of 'spreading the spectrum' of the noise caused by the coefficient errors generated in the manufacture of the individual gyros. A filter can then be used to eliminate that part of the spread spectrum that is outside the pass band of the gyro. A heuristic analysis in that paper argues that the DSMT can be used to control the effects of the random coefficient variations. In a follow-on paper [4], a simulation of a DSMT indicated that the heuristics were consistent. In this paper, analytic expressions of the DSMT noise are developed which confirm that the earlier conclusions are valid. These expressions include the various DSMT design parameters and, therefore, can be used as design

A dynamic system matching technique for improving the accuracy of MEMS gyroscopes

Science.gov (United States)

Stubberud, Peter A.; Stubberud, Stephen C.; Stubberud, Allen R.

2014-12-01

A classical MEMS gyro transforms angular rates into electrical values through Euler's equations of angular rotation. Production models of a MEMS gyroscope will have manufacturing errors in the coefficients of the differential equations. The output signal of a production gyroscope will be corrupted by noise, with a major component of the noise due to the manufacturing errors. As is the case of the components in an analog electronic circuit, one way of controlling the variability of a subsystem is to impose extremely tight control on the manufacturing process so that the coefficient values are within some specified bounds. This can be expensive and may even be impossible as is the case in certain applications of micro-electromechanical (MEMS) sensors. In a recent paper [2], the authors introduced a method for combining the measurements from several nominally equal MEMS gyroscopes using a technique based on a concept from electronic circuit design called dynamic element matching [1]. Because the method in this paper deals with systems rather than elements, it is called a dynamic system matching technique (DSMT). The DSMT generates a single output by randomly switching the outputs of several, nominally identical, MEMS gyros in and out of the switch output. This has the effect of 'spreading the spectrum' of the noise caused by the coefficient errors generated in the manufacture of the individual gyros. A filter can then be used to eliminate that part of the spread spectrum that is outside the pass band of the gyro. A heuristic analysis in that paper argues that the DSMT can be used to control the effects of the random coefficient variations. In a follow-on paper [4], a simulation of a DSMT indicated that the heuristics were consistent. In this paper, analytic expressions of the DSMT noise are developed which confirm that the earlier conclusions are valid. These expressions include the various DSMT design parameters and, therefore, can be used as design tools for DSMT

Synthesis of boron nitride nanotubes with SiC nanowire as template

International Nuclear Information System (INIS)

Zhong, B.; Song, L.; Huang, X.X.; Wen, G.W.; Xia, L.

2011-01-01

Highlights: → Boron nitride nanotubes (BNNTs) have been fabricated using SiC nanowires as template. → SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. → A template self-sacrificing mechanism is responsible for the formation of BNNTs. -- Abstract: A novel template method for the preparation of boron nitride nanotubes (BNNTs) using SiC nanowire as template and ammonia borane as precursor is reported. We find out that the SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. The as-prepared products are well characterized by means of complementary analytical techniques. A possible formation mechanism is disclosed. The method developed here paves the way for large scale production of BNNTs.

RF MEMS theory, design, and technology

CERN Document Server

Rebeiz, Gabriel M

2003-01-01

Ultrasmall Radio Frequency and Micro-wave Microelectromechanical systems (RF MEMs), such as switches, varactors, and phase shifters, exhibit nearly zero power consumption or loss. For this reason, they are being developed intensively by corporations worldwide for use in telecommunications equipment. This book acquaints readers with the basics of RF MEMs and describes how to design practical circuits and devices with them. The author, an acknowledged expert in the field, presents a range of real-world applications and shares many valuable tricks of the trade.

Nanocrystalline SiC film thermistors for cryogenic applications

Science.gov (United States)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

From MEMS to nanomachine

International Nuclear Information System (INIS)

Esashi, Masayoshi; Ono, Takahito

2005-01-01

Practically applicable microelectromechanical systems (MEMS) and nanomachines have been developed by applying dry processes. Deep reactive ion etching (RIE) of silicon and its applications to an electrostatically levitated rotational gyroscope, a fibre optic blood pressure sensor and in micro-actuated probes are described. High density electrical feedthrough in glass is made using deep RIE of glass and electroplating of metal. Multi-probe data storage system has been developed using the high density electrical feedthrough in glass. Chemical vapour deposition (CVD) of different materials have been developed for MEMS applications; trench-refill using SiO 2 CVD, microstructures using Silicon carbide CVD for glass mold press and selective CVD of carbon nanotube for electron field emitter. Multi-column electron beam lithography system has been developed using the electron field emitter. (topical review)

Development of the micro pixel chamber based on MEMS technology

Science.gov (United States)

Takemura, T.; Takada, A.; Kishimoto, T.; Komura, S.; Kubo, H.; Matsuoka, Y.; Miuchi, K.; Miyamoto, S.; Mizumoto, T.; Mizumura, Y.; Motomura, T.; Nakamasu, Y.; Nakamura, K.; Oda, M.; Ohta, K.; Parker, J. D.; Sawano, T.; Sonoda, S.; Tanimori, T.; Tomono, D.; Yoshikawa, K.

2018-02-01

Micro pixel chambers (μ-PIC) are gaseous two-dimensional imaging detectors originally manufactured using printed circuit board (PCB) technology. They are used in MeV gamma-ray astronomy, medicalimaging, neutron imaging, the search for dark matter, and dose monitoring. The position resolution of the present μ-PIC is approximately 120 μm (RMS), however some applications require a fine position resolution of less than 100 μm. To this end, we have started to develop a μ-PIC based on micro electro mechanical system (MEMS) technology, which provides better manufacturing accuracy than PCB technology. Our simulation predicted the gains of MEMS μ-PICs to be twice those of PCB μ-PICs at the same anode voltage. We manufactured two MEMS μ-PICs and tested them to study their behavior. In these experiments, we successfully operated the fabricatedMEMS μ-PICs and we achieved a maximum gain of approximately 7×103 and collected their energy spectra under irradiation of X-rays from 55Fe. However, the measured gains of the MEMS μ-PICs were less than half of the values predicted in the simulations. We postulated that the gains of the MEMS μ-PICs are diminished by the effect of the silicon used as a semiconducting substrate.

SiC materials: a semiconductor family for the next century

Science.gov (United States)

Camassel, Jean; Contreras, Sylvie; Robert, Jean-Louis

2000-03-01

The current status of SiC semiconductor materials is reviewed, with emphasize on forthcoming applications. In a first part one focuses on the most important physical properties. Then, power device and micro-opto-electronic applications, using both 4H and 6H-SiC, are presented. Technological problems which have to be solved in order to realize simple planar device are considered. Emphasize is set on the French and European efforts, and on the USA and Japan's ones. In a second part, one deals with advanced high temperature industrial sensor applications. Interest for cubic 3C-SiC eposited on Silicon On Insulator (SOI) is demonstrated and results of comparative examinations of different 3CSiC/SOI materials are briefly given.

Plasmon-assisted photoluminescence enhancement of SiC nanocrystals by proximal silver nanoparticles

International Nuclear Information System (INIS)

Zhang, N.; Dai, D.J.; Fan, J.Y.

2012-01-01

Highlights: ► We studied metal surface plasmon-enhanced photoluminescence in SiC nanocrystals. ► The integrated emission intensity can be enhanced by 17 times. ► The coupling between SiC emission and Ag plasmon oscillation induces the enhancement. ► The enhancement is tunable with varied spacing thickness of electrolytes. - Abstract: Plasmon-enhanced photoluminescence has wide application potential in many areas, whereas the underlying mechanism is still in debate. We report the photoluminescence enhancement in SiC nanocrystal–Ag nanoparticle coupled system spaced by the poly(styrene sulfonic acid) sodium salt/poly(allylamine hydrochloride) polyelectrolyte bilayers. The integrated luminescence intensity can be improved by up to 17 times. Our analysis indicates that the strong coupling between the SiC nanocrystals and the surface plasmon oscillation of the silver nanoparticles is the major cause of the luminescence enhancement. These findings will help to understand the photoluminescence enhancement mechanism as well as widen the applications of the SiC nanocrystals in photonics and life sciences.

The role of Pd in the transport of Ag in SiC

International Nuclear Information System (INIS)

Olivier, E.J.; Neethling, J.H.

2013-01-01

This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

The role of Pd in the transport of Ag in SiC

Energy Technology Data Exchange (ETDEWEB)

Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2013-01-15

This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

Nucleation and growth of polycrystalline SiC

DEFF Research Database (Denmark)

Kaiser, M.; Schimmel, S.; Jokubavicius, V.

2014-01-01

The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15......R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar...

Microelectromechanical Systems (MEMS)

Indian Academy of Sciences (India)

to have several scientific journals dedicated to it. These journals are instrumental in bringing out the interdisciplinary nature of research that the field demands. In the beginning, most papers were process centric where realization of a MEMS device or structure using conven- tional CMOS processes or their variants was the ...

Integrated Electromechanical Transduction Schemes for Polymer MEMS Sensors

Directory of Open Access Journals (Sweden)

Damien Thuau

2018-04-01

Full Text Available Polymer Micro ElectroMechanical Systems (MEMS have the potential to constitute a powerful alternative to silicon-based MEMS devices for sensing applications. Although the use of commercial photoresists as structural material in polymer MEMS has been widely reported, the integration of functional polymer materials as electromechanical transducers has not yet received the same amount of interest. In this context, we report on the design and fabrication of different electromechanical schemes based on polymeric materials ensuring different transduction functions. Piezoresistive transduction made of carbon nanotube-based nanocomposites with a gauge factor of 200 was embedded within U-shaped polymeric cantilevers operating either in static or dynamic modes. Flexible resonators with integrated piezoelectric transduction were also realized and used as efficient viscosity sensors. Finally, piezoelectric-based organic field effect transistor (OFET electromechanical transduction exhibiting a record sensitivity of over 600 was integrated into polymer cantilevers and used as highly sensitive strain and humidity sensors. Such advances in integrated electromechanical transduction schemes should favor the development of novel all-polymer MEMS devices for flexible and wearable applications in the future.

PhySIC: a veto supertree method with desirable properties.

Science.gov (United States)

Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

2007-10-01

This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

Passivation of hexagonal SiC surfaces by hydrogen termination

International Nuclear Information System (INIS)

Seyller, Thomas

2004-01-01

Surface hydrogenation is a well established technique in silicon technology. It is easily accomplished by wet-chemical procedures and results in clean and unreconstructed surfaces, which are extremely low in charged surface states and stable against oxidation in air, thus constituting an ideal surface preparation. As a consequence, methods for hydrogenation have been sought for preparing silicon carbide (SiC) surfaces with similar well defined properties. It was soon recognized, however, that due to different surface chemistry new ground had to be broken in order to find a method leading to the desired monatomic hydrogen saturation. In this paper the results of H passivation of SiC surfaces by high-temperature hydrogen annealing will be discussed, thereby placing emphasis on chemical, structural and electronic properties of the resulting surfaces. In addition to their unique properties, hydrogenated hexagonal SiC {0001} surfaces offer the interesting possibility of gaining insight into the formation of silicon- and carbon-rich reconstructions as well. This is due to the fact that to date hydrogenation is the only method providing oxygen-free surfaces with a C to Si ratio of 1:1. Last but not least, the electronic properties of hydrogen-free SiC {0001} surfaces will be alluded to. SiC {0001} surfaces are the only known semiconductor surfaces that can be prepared in their unreconstructed (1 x 1) state with one dangling bond per unit cell by photon induced hydrogen desorption. These surfaces give indications of a Mott-Hubbard surface band structure

Large area SiC coating technology of RBSC for semiconductor processing component

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2001-06-01

As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

Large area SiC coating technology of RBSC for semiconductor processing component

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2001-06-01

As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

Characterisation of 10 kV 10 A SiC MOSFET

DEFF Research Database (Denmark)

Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

2015-01-01

The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

Antenna Miniaturization with MEMS Tunable Capacitors

DEFF Research Database (Denmark)

Barrio, Samantha Caporal Del; Morris, Art; Pedersen, Gert Frølund

2014-01-01

In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss and their characterist......In today’s mobile device market, there is a strong need for efficient antenna miniaturization. Tunable antennas are a very promising way to reduce antenna volume while enlarging its operating bandwidth. MEMS tunable capacitors are state-ofthe- art in terms of insertion loss...

CVD of SiC and AlN using cyclic organometallic precursors

Science.gov (United States)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Sputtered highly oriented PZT thin films for MEMS applications

Science.gov (United States)

Kalpat, Sriram S.

Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

DEFF Research Database (Denmark)

Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana

2014-01-01

Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide....... After 5 times coating, a 5.6 µm thick γ-Al2O3 layer was obtained. This membrane shows retention of ~75% for polyethylene glycol molecules with Mn of 8 and 35 kDa, indicating that, despite their intrinsic surface roughness, commercial SiC microfiltration tubes can be applied as carrier for thin...... ultrafiltration membranes. This work also indicates that an improvement of the commercial SiC support surface smoothness may greatly enhance permeance and selectivity of Υ-Al2O3 ultrafiltration membranes by allowing the deposition of thinner defect-free layers....

White light emission from fluorescent SiC with porous surface

DEFF Research Database (Denmark)

Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

2017-01-01

We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3, the photol......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3...... the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...

Nondestructive surface profiling of hidden MEMS using an infrared low-coherence interferometric microscope

Science.gov (United States)

Krauter, Johann; Osten, Wolfgang

2018-03-01

There are a wide range of applications for micro-electro-mechanical systems (MEMS). The automotive and consumer market is the strongest driver for the growing MEMS industry. A 100 % test of MEMS is particularly necessary since these are often used for safety-related purposes such as the ESP (Electronic Stability Program) system. The production of MEMS is a fully automated process that generates 90 % of the costs during the packaging and dicing steps. Nowadays, an electrical test is carried out on each individual MEMS component before these steps. However, after encapsulation, MEMS are opaque to visible light and other defects cannot be detected. Therefore, we apply an infrared low-coherence interferometer for the topography measurement of those hidden structures. A lock-in algorithm-based method is shown to calculate the object height and to reduce ghost steps due to the 2π -unambiguity. Finally, measurements of different MEMS-based sensors are presented.

Qualification of SiC materials for fusion and fission reactors

International Nuclear Information System (INIS)

Ryazanov, Alexander

2009-01-01

Ceramic materials such as silicon carbide (SiC) and SiC/SiC composites are both considered, due to their high-temperature strength, pseudo-ductile fracture behavior and low-induced radioactivity, as candidate materials for fusion reactor (test blanket module for ITER) and high temperature gas-cooled reactors (HTGR). The radiation swelling and creep of SiC are very important physical phenomena that determine the radiation resistance of them in these reactors. Other important problem which exists especially in fusion reactor is an effect of accumulation of high concentrations of helium atoms in SiC (up to 15000-20000 at.ppm) due to (n,α) nuclear reaction on physical mechanical properties. An understanding of the physical mechanism of this phenomenon is very important for the investigations of helium atom effect on radiation swelling in SiC. In this report a compilation of non-irradiated and irradiated properties of SiC are provided and analyzed in terms of their application to fusion and high temperature gas cooled reactors. Special topic of this report is oriented on the micro structural changes in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and ion irradiations at elevated temperatures. The evolutions of various radiation induced defects including dislocation loops, network dislocations and cavities are presented here as a function of irradiation temperature and fluencies. These observations are discussed in relation with such irradiation phenomena in SiC as low temperature swelling and cavity swelling. One of the main difficulties in the radiation damage studies of SiC materials lies in the absence of theoretical models and interpretation of many physical mechanisms of radiation phenomena including the radiation swelling and creep. The point defects in ceramic materials are characterized by the charge states and they can have an effective charge. The internal effective electrical field is formed due to the accumulation of charged point

10kV SiC MOSFET split output power module

DEFF Research Database (Denmark)

Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

2015-01-01

The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

Energy efficiency improvement target for SIC 34 - fabricated metal products

Energy Technology Data Exchange (ETDEWEB)

Byrer, T. G.; Billhardt, C. F.; Farkas, M. S.

1977-03-15

A March 15, 1977 revision of a February 15, 1977 document on the energy improvement target for the Fabricated Metal Products industry (SIC 34) is presented. A net energy savings in 1980 of 24% as compared with 1972 energy consumption in SIC 34 is considered a realistic goal. (ERA citation 04:045008)

SiC Coating Process Development Using H-PCS in Supercritical CO2

International Nuclear Information System (INIS)

Park, Kwangheon; Jung, Wonyoung

2013-01-01

We tried SiC coating using supercritical fluids. Supercritical fluids are the substance exists over critical temperature and critical pressure. It is hard to expect that there would be a big change as single-solvent as the fluid is incompressible and the space between the molecules is almost steady. But the fluid which is being supercritical can bring a great change when it is changed its pressure near its critical point, showing its successive change in the density, viscosity, diffusion coefficient and the polarity. We have tested the 'H-PCS into SiC' coating experiment with supercritical CO 2 which has the high penetration, low viscosity as well as the high density and the high solubility that shows the property of the fluid. This experiment is for SiC coating using H-PCS in supercritical CO 2 . It shows the clear difference that the penetration of H-PCS into the SiC between dip coating method and using the supercritical CO 2 If we can make a metal cladding with SiC composites as a protective layer, the use of the cladding will be very broad and diverse. Inherent safe nuclear fuels can be possible that can stand under severe accident conditions. SiC is known to be one of a few materials that maintain very corrosion-resistant properties under tough corrosive environments. The metal cladding with SiC composites as a protective layer will be a high-tech product that can be used in many applications including chemical, material, and nuclear engineering and etc

Tema 8. Principis físics dels semiconductors (Guia del tema)

OpenAIRE

Beléndez Vázquez, Augusto

2011-01-01

Guia del "Tema 8. Principis físics dels semiconductors" de l'assignatura "Fonaments Físics de l'Enginyeria I" de "Grau en Enginyeria en So i Imatge" impartit a l'Escola Politècnica Superior de la Universitat d'Alacant.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

Science.gov (United States)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

A Review on Key Issues and Challenges in Devices Level MEMS Testing

Directory of Open Access Journals (Sweden)

Muhammad Shoaib

2016-01-01

Full Text Available The present review provides information relevant to issues and challenges in MEMS testing techniques that are implemented to analyze the microelectromechanical systems (MEMS behavior for specific application and operating conditions. MEMS devices are more complex and extremely diverse due to the immersion of multidomains. Their failure modes are distinctive under different circumstances. Therefore, testing of these systems at device level as well as at mass production level, that is, parallel testing, is becoming very challenging as compared to the IC test, because MEMS respond to electrical, physical, chemical, and optical stimuli. Currently, test systems developed for MEMS devices have to be customized due to their nondeterministic behavior and complexity. The accurate measurement of test systems for MEMS is difficult to quantify in the production phase. The complexity of the device to be tested required maturity in the test technique which increases the cost of test development; this practice is directly imposed on the device cost. This factor causes a delay in time-to-market.

Effect of Ti and Si interlayer materials on the joining of SiC ceramics

Energy Technology Data Exchange (ETDEWEB)

Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-08-15

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

Micromechanics of fiber pull-out and crack bridging in SCS-6 SiC- CVD SiC composite system at high-temperature

International Nuclear Information System (INIS)

El-Azab, A.; Ghoniem, N.M.

1993-01-01

A micro mechanical model is developed to study fiber pull-out and crack bridging in fiber reinforced SiC-SiC composites with time dependent thermal creep. By analyzing the creep data for monolithic CVD SiC (matrix) and the SCS-6 SiC fibers in the temperature range 900-1250 degrees C, it is found that the matrix creep rates can be ignored in comparison to those of fibers. Two important relationships are obtained: (1) a time dependent relation between the pull-out stress and the relative sliding distance between the fiber and matrix for the purpose of analyzing pull-out experiments, and (2) the relation between the bridging stress and the crack opening displacement to be used in studying the mechanics and stability of matrix crack bridged by fibers at high temperatures. The present analysis can also be applied to Nicalon-reinforced CVD SiC matrix system since the Nicalon fibers exhibit creep characteristics similar to those of the SCS-6 fibers

SiC Optically Modulated Field-Effect Transistor

Science.gov (United States)

Tabib-Azar, Massood

2009-01-01

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

A low-noise MEMS accelerometer for unattended ground sensor applications

Science.gov (United States)

Speller, Kevin E.; Yu, Duli

2004-09-01

A low-noise micro-machined servo accelerometer has been developed for use in Unattended Ground Sensors (UGS). Compared to conventional coil-and-magnet based velocity transducers, this Micro-Electro-Mechanical System (MEMS) accelerometer offers several key benefits for battlefield monitoring. Many UGS require a compass to determine deployment orientation with respect to magnetic North. This orientation information is critical for determining the bearing of incoming signals. Conventional sensors with sensing technology based on a permanent magnet can cause interference with a compass when used in close proximity. This problem is solved with a MEMS accelerometer which does not require any magnetic materials. Frequency information below 10 Hz is valuable for identification of signal sources. Conventional seismometers used in UGS are typically limited in frequency response from 20 to 200 Hz. The MEMS accelerometer has a flat frequency response from DC to 5 kHz. The wider spectrum of signals received improves detection, classification and monitoring on the battlefield. The DC-coupled output of the MEMS accelerometer also has the added benefit of providing tilt orientation data for the deployed UGS. Other performance parameters of the MEMS accelerometer that are important to UGS such as size, weight, shock survivability, phase response, distortion, and cross-axis rejection will be discussed. Additionally, field test data from human footsteps recorded with the MEMS accelerometer will be presented.

SYLRAMICTM SiC fibers for CMC reinforcement

International Nuclear Information System (INIS)

Jones, Richard E.; Petrak, Dan; Rabe, Jim; Szweda, Andy

2000-01-01

Dow Corning researchers developed SYLRAMIC SiC fiber specifically for use in ceramic-matrix composite (CMC) components for use in turbine engine hot sections where excellent thermal stability, high strength and high thermal conductivity are required. This is a stoichiometric SiC fiber with a high degree of crystallinity, high tensile strength, high tensile modulus and good thermal conductivity. Owing to the small diameter, this textile-grade fiber can be woven into 2-D and 3-D structures for CMC fabrication. These properties are also of high interest to the nuclear community. Some initial studies have shown that SYLRAMIC fiber shows very good dimensional stability in a neutron flux environment, which offers further encouragement. This paper will review the properties of SYLRAMIC SiC fiber and then present the properties of polymer impregnation and pyrolysis (PIP) processed CMC made with this fiber at Dow Corning. While these composites may not be directly applicable to applications of interest to this audience, we believe that the properties shown will give good evidence that the fiber should be suitable for high temperature structural applications in the nuclear arena

ToF-MEIS stopping measurements in thin SiC films

International Nuclear Information System (INIS)

Linnarsson, M.K.; Khartsev, S.; Primetzhofer, D.; Possnert, G.; Hallén, A.

2014-01-01

Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS

Modeling and non-linear responses of MEMS capacitive accelerometer

Directory of Open Access Journals (Sweden)

Sri Harsha C.

2014-01-01

Full Text Available A theoretical investigation of an electrically actuated beam has been illustrated when the electrostatic-ally actuated micro-cantilever beam is separated from the electrode by a moderately large gap for two distinct types of geometric configurations of MEMS accelerometer. Higher order nonlinear terms have been taken into account for studying the pull in voltage analysis. A nonlinear model of gas film squeezing damping, another source of nonlinearity in MEMS devices is included in obtaining the dynamic responses. Moreover, in the present work, the possible source of nonlinearities while formulating the mathematical model of a MEMS accelerometer and their influences on the dynamic responses have been investigated. The theoretical results obtained by using MATLAB has been verified with the results obtained in FE software and has been found in good agreement. Criterion towards stable micro size accelerometer for each configuration has been investigated. This investigation clearly provides an understanding of nonlinear static and dynamics characteristics of electrostatically micro cantilever based device in MEMS.

Thermal Desalination using MEMS and Salinity-Gradient Solar Pond Technology

Science.gov (United States)

Lu, H.; Walton, J. C.; Hein, H.

2002-08-01

MEMS (multi-effect, multi-stage) flash desalination (distillation) driven by thermal energy derived from a salinity-gradient solar pond is investigated in this study for the purpose of improving the thermodynamic efficiency and economics of this technology. Three major tasks are performed: (1) a MEMS unit is tested under various operating conditions at the El Paso Solar Pond site; (2) the operation and maintenance procedures of the salinity-gradient solar pond coupled with the MEMS operation is studied; and (3) previous test data on a 24-stage, falling-film flash distillation unit (known as the Spinflash) is analyzed and compared with the performance of the MEMS unit. The data and information obtained from this investigation is applicable to a variety of thermal desalination processes using other solar options and/or waste heat.

MEMS Actuators for Improved Performance and Durability

Science.gov (United States)

Yearsley, James M.

Micro-ElectroMechanical Systems (MEMS) devices take advantage of force-scaling at length scales smaller than a millimeter to sense and interact with directly with phenomena and targets at the microscale. MEMS sensors found in everyday devices like cell-phones and cars include accelerometers, gyros, pressure sensors, and magnetic sensors. MEMS actuators generally serve more application specific roles including micro- and nano-tweezers used for single cell manipulation, optical switching and alignment components, and micro combustion engines for high energy density power generation. MEMS rotary motors are actuators that translate an electric drive signal into rotational motion and can serve as rate calibration inputs for gyros, stages for optical components, mixing devices for micro-fluidics, etc. Existing rotary micromotors suffer from friction and wear issues that affect lifetime and performance. Attempts to alleviate friction effects include surface treatment, magnetic and electrostatic levitation, pressurized gas bearings, and micro-ball bearings. The present work demonstrates a droplet based liquid bearing supporting a rotary micromotor that improves the operating characteristics of MEMS rotary motors. The liquid bearing provides wear-free, low-friction, passive alignment between the rotor and stator. Droplets are positioned relative to the rotor and stator through patterned superhydrophobic and hydrophilic surface coatings. The liquid bearing consists of a central droplet that acts as the motor shaft, providing axial alignment between rotor and stator, and satellite droplets, analogous to ball-bearings, that provide tip and tilt stable operation. The liquid bearing friction performance is characterized through measurement of the rotational drag coefficient and minimum starting torque due to stiction and geometric effects. Bearing operational performance is further characterized by modeling and measuring stiffness, environmental survivability, and high

Preparation of biomorphic SiC ceramic by carbothermal reduction of oak wood charcoal

International Nuclear Information System (INIS)

Qian Junmin; Wang Jiping; Jin Zhihao

2004-01-01

Highly porous silicon carbide (SiC) ceramic with woodlike microstructure has been prepared at 1400-1600 deg. C by carbothermal reduction reaction of charcoal/silica composites in static argon atmosphere. These composites were fabricated by infiltrating silica sol into a porous biocarbon template from oak wood using a vacuum/pressure infiltration process. The morphology of resulting porous SiC ceramic, as well as the conversion mechanism of wood to porous SiC ceramic, have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Experimental results show that the biomorphic cellular morphology of oak wood charcoal is remained in the porous SiC ceramic with high precision that consists of β-SiC with traces of α-SiC. Silica in the charcoal/silica composites exists in the cellular pores in form of fibers and rods. The SiC strut material is formed by gas-solid reaction between SiO (g) and C (s) during the charcoal-to-ceramic conversion. The densification of SiC strut material may occur at moderate temperatures and holding time

Preparation of biomorphic SiC ceramic by carbothermal reduction of oak wood charcoal

Energy Technology Data Exchange (ETDEWEB)

Qian Junmin; Wang Jiping; Jin Zhihao

2004-04-25

Highly porous silicon carbide (SiC) ceramic with woodlike microstructure has been prepared at 1400-1600 deg. C by carbothermal reduction reaction of charcoal/silica composites in static argon atmosphere. These composites were fabricated by infiltrating silica sol into a porous biocarbon template from oak wood using a vacuum/pressure infiltration process. The morphology of resulting porous SiC ceramic, as well as the conversion mechanism of wood to porous SiC ceramic, have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Experimental results show that the biomorphic cellular morphology of oak wood charcoal is remained in the porous SiC ceramic with high precision that consists of {beta}-SiC with traces of {alpha}-SiC. Silica in the charcoal/silica composites exists in the cellular pores in form of fibers and rods. The SiC strut material is formed by gas-solid reaction between SiO (g) and C (s) during the charcoal-to-ceramic conversion. The densification of SiC strut material may occur at moderate temperatures and holding time.

Feasibility study on the application of carbide (ZrC, SiC) for VHTR

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

2006-08-15

A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

Microwave joining of SiC

Energy Technology Data Exchange (ETDEWEB)

Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

1995-05-01

The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Determination of irradiation temperature using SiC temperature monitors

International Nuclear Information System (INIS)

Maruyama, Tadashi; Onose, Shoji

1999-01-01

This paper describes a method for detecting the change in length of SiC temperature monitors and a discussion is made on the relationship between irradiation temperature and the recovery in length of SiC temperature monitors. The SiC specimens were irradiated in the experimental fast reactor JOYO' at the irradiation temperatures around 417 to 645degC (design temperature). The change in length of irradiated specimens was detected using a dilatometer with SiO 2 glass push rod in an infrared image furnace. The temperature at which recovery in macroscopic length begins was obtained from the annealing intersection temperature. The results of measurements indicated that a difference between annealing intersection temperature and the design temperature sometimes reached well over ±100degC. A calibration method to obtain accurate irradiation temperature was presented and compared with the design temperature. (author)

Synthesis of nanostructured SiC using the pulsed laser deposition technique

International Nuclear Information System (INIS)

Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

2009-01-01

We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

Melancolia, memória e subjetividade

OpenAIRE

Giele Rocha Dorneles

2015-01-01

A proposta desta tese é estabelecer, através de uma perspectiva comparatista, relações entre três temas articuladores: a melancolia, a memória e a subjetividade, de modo a constituir entrelaçamentos possíveis, além de buscar indicar o modo como essas três temáticas são apresentadas e representadas em diferentes formas de expressão das artes, partindo de obras literárias - como “A maior flor do mundo” e “As pequenas memórias”, entre outras de José Saramago, e de autores como Charles Baudelaire...

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

International Nuclear Information System (INIS)

Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

2012-01-01

In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang

2015-01-23

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Highly flexible and robust N-doped SiC nanoneedle field emitters

KAUST Repository

Chen, Shanliang; Ying, Pengzhan; Wang, Lin; Wei, Guodong; Gao, Fengmei; Zheng, Jinju; Shang, Minhui; Yang, Zuobao; Yang, Weiyou; Wu, Tao

2015-01-01

Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

Directory of Open Access Journals (Sweden)

Xinghao Liang

2018-02-01

Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

Fabrication and performance analysis of MEMS-based Variable Emissivity Radiator for Space Applications

International Nuclear Information System (INIS)

Lee, Changwook; Oh, Hyung-Ung; Kim, Taegyu

2014-01-01

All Louver was typically representative as the thermal control device. The louver was not suitable to be applied to small satellite, because it has the disadvantage of increase in weight and volume. So MEMS-based variable radiator was developed to support the disadvantage of the louver MEMS-based variable emissivity radiator was designed for satellite thermal control. Because of its immediate response and low power consumption. Also MEMS- based variable emissivity radiator has been made smaller by using MEMS process, it could be solved the problem of the increase in weight and volume, and it has a high reliability and immediate response by using electrical control. In this study, operation validation of the MEMS radiator had been carried out, resulting that emissivity could be controlled. Numerical model was also designed to predict the thermal control performance of MEMS-based variable emissivity radiator

MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

Energy Technology Data Exchange (ETDEWEB)

Dugger, Michael Thomas; Asay, David B.; Kim, Seong H.

2008-01-01

Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

A novel prototyping method for die-level monolithic integration of MEMS above-IC

International Nuclear Information System (INIS)

Cicek, Paul-Vahe; Zhang, Qing; Saha, Tanmoy; Mahdavi, Sareh; Allidina, Karim; Gamal, Mourad El; Nabki, Frederic

2013-01-01

This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration. (paper)

Effects of SiC and MgO on aluminabased ceramic foams filters

OpenAIRE

CAO Da-li; ZHOU Jing-yi; JIN Yong-ming

2007-01-01

Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phas...

Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

International Nuclear Information System (INIS)

Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

2006-01-01

The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

Microstructure of SiC ceramics fabricated by pyrolysis of electron beam irradiated polycarbomethylsilane containing precursors

International Nuclear Information System (INIS)

Xu Yunshu; Tanaka, Shigeru

2003-01-01

A modified gel-casting method was developed to form the ceramics precursor matrix by using polycarbomehylsilane (PCMS) and SiC powder. The polymer precursor was mixed with SiC powder in toluene, and then the slurry samples were cast into designed shapes. The pre-ceramic samples were then irradiated by 2.0 MeV electron beam generated by a Cockcroft-Walton type accelerator in He gas flow to about 15 MGy. The cured samples were pyrolyzed and sintered into SiC ceramics at 1300degC in Ar gas. The modified gel-casting method leaves almost no internal stress in the pre-ceramic samples, and the electron beam curing not only diminished the amount of pyrolysis gaseous products but also enhanced the interface binding of the polymer converted SiC and the grains of SiC powder. Optical microscope, AFM and SEM detected no visible internal or surface cracks in the final SiC ceramics matrix. A maximum value of 122 MPa of flexural strength of the final SiC ceramics was achieved. (author)

The Sandia MEMS passive shock sensor : FY07 maturation activities.

Energy Technology Data Exchange (ETDEWEB)

Houston, Jack E.; Blecke, Jill; Mitchell, John Anthony; Wittwer, Jonathan W.; Crowson, Douglas A.; Clemens, Rebecca C.; Walraven, Jeremy Allen; Epp, David S.; Baker, Michael Sean

2008-08-01

This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.

NSF/AFOSR/ASME Workshop on Tribology Issues and Opportunities in MEMS

CERN Document Server

1998-01-01

Micro Electro Mechanical Systems (MEMS) is already about a billion dollars a year industry and is growing rapidly. So far major emphasis has been placed on the fabrication processes for various devices. There are serious issues related to tribology, mechanics, surfacechemistry and materials science in the operationand manufacturingof many MEMS devices and these issues are preventing an even faster commercialization. Very little is understood about tribology and mechanical properties on micro- to nanoscales of the materials used in the construction of MEMS devices. The MEMS community needs to be exposed to the state-of-the-artoftribology and vice versa. Fundamental understanding of friction/stiction, wear and the role of surface contamination and environmental debris in micro devices is required. There are significantadhesion, friction and wear issues in manufacturing and actual use, facing the MEMS industry. Very little is understood about the tribology of bulk silicon and polysilicon films used in the constr...

Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

Energy Technology Data Exchange (ETDEWEB)

Chen Libao [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Xie Xiaohua [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Wang Baofeng [Department of Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Wang Ke [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xie Jingying [Energy Science and Technology Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100049 (China)]. E-mail: jyxie@mail.sim.ac.cn

2006-07-15

Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g{sup -1} and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly.

Spherical nanostructured Si/C composite prepared by spray drying technique for lithium ion batteries anode

International Nuclear Information System (INIS)

Chen Libao; Xie Xiaohua; Wang Baofeng; Wang Ke; Xie Jingying

2006-01-01

Spherical nanostructured Si/C composite was prepared by spray drying technique, followed by heat treatment, in which nanosized silicon and fine graphite particles were homogeneously embedded in carbon matrix pyrolyzed by phenol formaldehyde resin. Cyclic voltammetry tests showed two pairs of redox peaks corresponding to lithiation and delithiation of Si/C composite. The Si/C composite exhibited a reversible capacity of 635 mAh g -1 and good cycle performance used in lithium ion batteries. To improve cycle performance of this Si/C composite further, the carbon-coated Si/C composite was synthesized by the second spray drying and heat treatment processing. The cycle performance of carbon-coated Si/C composite was improved significantly, which was attributed to the formation of stable SEI passivation layers on the outer surface of carbon shell which protected the bared silicon from exposing to electrolyte directly

Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

Energy Technology Data Exchange (ETDEWEB)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

2001-07-01

This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

Science.gov (United States)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Digital holography for MEMS and microsystem metrology

CERN Document Server

Asundi, Anand

2011-01-01

Approaching the topic of digital holography from the practical perspective of industrial inspection, Digital Holography for MEMS and Microsystem Metrology describes the process of digital holography and its growing applications for MEMS characterization, residual stress measurement, design and evaluation, and device testing and inspection. Asundi also provides a thorough theoretical grounding that enables the reader to understand basic concepts and thus identify areas where this technique can be adopted. This combination of both practical and theoretical approach will ensure the

Oxidative stress detection by MEMS cantilever sensor array based electronic nose

Science.gov (United States)

Gupta, Anurag; Singh, T. Sonamani; Singh, Priyanka; Yadava, R. D. S.

2018-05-01

This paper is concerned with analyzing the role of polymer swelling induced surface stress in MEMS chemical sensors. The objective is to determine the impact of surface stress on the chemical discrimination ability of MEMS resonator sensors. We considered a case study of hypoxia detection by MEMS sensor array and performed several types of simulation experiments for detection of oxidative stress volatile organic markers in human breath. Both types of sensor response models that account for the surface stress effect and that did not were considered for the analyses in comparison. It is found that the surface stress (hence the polymer swelling) provides better chemical discrimination ability to polymer coated MEMS sensors.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Development of Testing Methodologies for the Mechanical Properties of MEMS

Science.gov (United States)

Ekwaro-Osire, Stephen

2003-01-01

This effort is to investigate and design testing strategies to determine the mechanical properties of MicroElectroMechanical Systems (MEMS) as well as investigate the development of a MEMS Probabilistic Design Methodology (PDM). One item of potential interest is the design of a test for the Weibull size effect in pressure membranes. The Weibull size effect is a consequence of a stochastic strength response predicted from the Weibull distribution. Confirming that MEMS strength is controlled by the Weibull distribution will enable the development of a probabilistic design methodology for MEMS - similar to the GRC developed CARES/Life program for bulk ceramics. However, the primary area of investigation will most likely be analysis and modeling of material interfaces for strength as well as developing a strategy to handle stress singularities at sharp corners, filets, and material interfaces. This will be a continuation of the previous years work. The ultimate objective of this effort is to further develop and verify the ability of the Ceramics Analysis and Reliability Evaluation of Structures Life (CARES/Life) code to predict the time-dependent reliability of MEMS structures subjected to multiple transient loads.

Research and Analysis of MEMS Switches in Different Frequency Bands

Directory of Open Access Journals (Sweden)

Wenchao Tian

2018-04-01

Full Text Available Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1 utilizing combinations of several switches in series; (2 covering a float metal layer on the dielectric layer; (3 using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4 developing MEMS switches using T-match and π-match; (5 designing MEMS switches based on bipolar complementary metal–oxide–semiconductor (BiCMOS technology and reconfigurable MEMS’ surfaces; (6 employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7 selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8 adopting gold alloying with carbon nanotubes (CNTs, hermetic and reliable packaging, and mN-level contact.

Piezoelectric Lead Zirconate Titanate (PZT) Ring Shaped Contour-Mode MEMS Resonators

Science.gov (United States)

Kasambe, P. V.; Asgaonkar, V. V.; Bangera, A. D.; Lokre, A. S.; Rathod, S. S.; Bhoir, D. V.

2018-02-01

Flexibility in setting fundamental frequency of resonator independent of its motional resistance is one of the desired criteria in micro-electromechanical (MEMS) resonator design. It is observed that ring-shaped piezoelectric contour-mode MEMS resonators satisfy this design criterion than in case of rectangular plate MEMS resonators. Also ring-shaped contour-mode piezoelectric MEMS resonator has an advantage that its fundamental frequency is defined by in-plane dimensions, but they show variation of fundamental frequency with different Platinum (Pt) thickness referred as change in ratio of fNEW /fO . This paper presents the effects of variation in geometrical parameters and change in piezoelectric material on the resonant frequencies of Platinum piezoelectric-Aluminium ring-shaped contour-mode MEMS resonators and its electrical parameters. The proposed structure with Lead Zirconate Titanate (PZT) as the piezoelectric material was observed to be a piezoelectric material with minimal change in fundamental resonant frequency due to Platinum thickness variation. This structure was also found to exhibit extremely low motional resistance of 0.03 Ω as compared to the 31-35 Ω range obtained when using AlN as the piezoelectric material. CoventorWare 10 is used for the design, simulation and corresponding analysis of resonators which is Finite Element Method (FEM) analysis and design tool for MEMS devices.

Detection and Analysis of Particles with Failed SiC in AGR-1 Fuel Compacts

International Nuclear Information System (INIS)

Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M.; Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A.

2014-01-01

As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of "1"3"4Cs and "1"3"7Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during the AGR-1 irradiation test or post-irradiation safety testing at 1600– 1800°C were identified, and individual particles with abnormally low cesium retention were sorted out with the ORNL Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking. (author)

Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

KAUST Repository

Kahaly, M. Upadhyay

2013-07-01

The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

KAUST Repository

Kahaly, M. Upadhyay; Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo

2013-01-01

The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

A route to strong p-doping of epitaxial graphene on SiC

KAUST Repository

Cheng, Yingchun; Schwingenschlö gl, Udo

2010-01-01

The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion

SiC Composite for Fuel Structure Applications

Energy Technology Data Exchange (ETDEWEB)

Yueh, Ken [Electric Power Research Inst. (EPRI), Charlotte, NC (United States)

2017-12-22

Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureable weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO₂ and CO₂. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO₄ and ZrSiO₄ are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO₄ during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.

SiC nanofibers grown by high power microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

The physics of epitaxial graphene on SiC(0001)

International Nuclear Information System (INIS)

Kageshima, H; Hibino, H; Tanabe, S

2012-01-01

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

MEMS and the microbe

NARCIS (Netherlands)

Ingham, C.J.; Vlieg, J.E.T.V.H.

2008-01-01

In recent years, relatively simple MEMS fabrications have helped accelerate our knowledge of the microbial cell. Current progress and challenges in the application of lab-on-a-chip devices to the viable microbe are reviewed. Furthermore, the degree to which microbiologists are becoming the engineers

Fluorescent SiC with pseudo-periodic moth-eye structures

DEFF Research Database (Denmark)

Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

2012-01-01

White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving sources. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter...... to enhance the extraction efficiency, we present a simple method to fabricate the pseudo-periodic moth-eye structures on the surface of the fluorescent SiC. A thin gold layer is deposited on the fluorescent SiC first. Then the thin gold layer is treated by rapid thermal processing. After annealing, the thin...... gold layer turns into discontinuous nano-islands. The average size of the islands is dependent on the annealing condition which could be well controlled. By using the reactive-ion etching, pseudo-periodic moth-eye structures would be obtained using the gold nano-islands as a mask layer. Reactive...

Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

International Nuclear Information System (INIS)

Reza-E-Rabby, M.; Jeelani, Sh.; Rangari, V. K.

2015-01-01

The SiC nanoparticles (NPs) were sonochemically coated with Octa Isobutyl (OI) polyhedral oligomeric silsesquioxane (POSS) to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD) techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM) analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nano composites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin

Structural Analysis of Polyhedral Oligomeric Silsesquioxane Coated SiC Nanoparticles and Their Applications in Thermoset Polymers

Directory of Open Access Journals (Sweden)

Md. Reza-E-Rabby

2015-01-01

Full Text Available The SiC nanoparticles (NPs were sonochemically coated with OctaIsobutyl (OI polyhedral oligomeric silsesquioxane (POSS to create a compatible interface between particle and thermoset polymer. X-ray photoelectron spectroscopy (XPS, Fourier transform infrared spectroscopy (FTIR, and X-ray diffraction (XRD techniques were used to analyze the structure of OI-POSS coated SiC nanoparticles. These results revealed the formation of a covalent bonding between SiC and OI-POSS. The transmission electron microscopy (TEM analysis of OI-POSS coated SiC nanoparticles has also shown the indication of attachment between these two nanoparticles. The OI-POSS coated SiC nanoparticles were further reinforced into a thermoset resin system in order to evaluate mechanical and thermal properties of nanocomposites. The flexural strength, modulus, and glass transition temperature were found to be enhanced while SiC and OI-POSS coated SiC were infused into epoxy system compared to those properties of neat epoxy resin.

Buffering Implications for the Design Space of Streaming MEMS Storage

NARCIS (Netherlands)

Khatib, M.G.; Abelmann, Leon; Preas, Kathy

2011-01-01

Emerging nanotechnology-based systems encounter new non-functional requirements. This work addresses MEMS storage, an emerging technology that promises ultrahigh density and energy-efficient storage devices. We study the buffering requirement of MEMS storage in streaming applications. We show that

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

Directory of Open Access Journals (Sweden)

Frederick Ojiemhende Ehiagwina

2016-09-01

Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

Enhanced polymeric encapsulation for MEMS based multi sensors for fisheries research

DEFF Research Database (Denmark)

Birkelund, Karen; Nørgaard, Lars; Thomsen, Erik Vilain

2011-01-01

light intensity, temperature, pressure and conductivity. For precise and fast measurements a direct exposure of the sensor to the water is desirable. A potted tube encapsulation concept has shown to be promising for accurate and fast measurements in harsh environment, provided a tight sealing......This paper presents the challenges of a packaged MEMS-based multi sensor system that allow for direct exposure of the sensing part to sea water. The system is part of a data storage tag used on fish to provide the researcher with information on fish behaviour and migration. The sensor measures...... compared to low pressure chemical vapor deposited (LPCVD) silicon nitride and untreated silicon dioxide....

High temperature oxidation behavior of SiC coating in TRISO coated particles

International Nuclear Information System (INIS)

Liu, Rongzheng; Liu, Bing; Zhang, Kaihong; Liu, Malin; Shao, Youlin; Tang, Chunhe

2014-01-01

Highlights: • High temperature oxidation tests of SiC coating in TRISO particles were carried out. • The dynamic oxidation process was established. • Oxidation mechanisms were proposed. • The existence of silicon oxycarbides at the SiO 2 /SiC interface was demonstrated. • Carbon was detected at the interface at high temperatures and long oxidation time. - Abstract: High temperature oxidation behavior of SiC coatings in tristructural-isotropic (TRISO) coated particles is crucial to the in-pile safety of fuel particles for a high temperature gas cooled reactor (HTGR). The postulated accident condition of air ingress was taken into account in evaluating the reliability of the SiC layer. Oxidation tests of SiC coatings were carried out in the ranges of temperature between 800 and 1600 °C and time between 1 and 48 h in air atmosphere. Based on the microstructure evolution of the oxide layer, the mechanisms and kinetics of the oxidation process were proposed. The existence of silicon oxycarbides (SiO x C y ) at the SiO 2 /SiC interface was demonstrated by X-ray photospectroscopy (XPS) analysis. Carbon was detected by Raman spectroscopy at the interface under conditions of very high temperatures and long oxidation time. From oxidation kinetics calculation, activation energies were 145 kJ/mol and 352 kJ/mol for the temperature ranges of 1200–1500 °C and 1550–1600 °C, respectively

Growth of graphene from SiC{0001} surfaces and its mechanisms

International Nuclear Information System (INIS)

Norimatsu, Wataru; Kusunoki, Michiko

2014-01-01

Graphene, a one-atom-layer carbon material, can be grown by thermal decomposition of SiC. On Si-terminated SiC(0001), graphene nucleates at steps and grows layer-by-layer, and as a result a homogeneous monolayer or bilayer can be obtained. We demonstrate this mechanism both experimentally and theoretically. On the C-face (000 1-bar ), multilayer graphene nucleates not only at steps, but also on the terraces. These differences reflect the distinct differences in the reactivity of these faces. Due to its high quality and structural controllability, graphene on SiC{0001} surfaces will be a platform for high-speed graphene device applications. (paper)

Hermeticity testing of MEMS and microelectronic packages

CERN Document Server

Costello, Suzanne

2013-01-01

Packaging of microelectronics has been developing since the invention of the transistor in 1947. With the increasing complexity and decreasing size of the die, packaging requirements have continued to change. A step change in package requirements came with the introduction of the Micro-Electro-Mechanical System (MEMS) whereby interactions with the external environment are, in some cases, required.This resource is a rapid, definitive reference on hermetic packaging for the MEMS and microelectronics industry, giving practical guidance on traditional and newly developed test methods. This book in

Single-crystal-silicon-based microinstrument to study friction and wear at MEMS sidewall interfaces

International Nuclear Information System (INIS)

Ansari, N; Ashurst, W R

2012-01-01

Since the advent of microelectromechanical systems (MEMS) technology, friction and wear are considered as key factors that determine the lifetime and reliability of MEMS devices that contain contacting interfaces. However, to date, our knowledge of the mechanisms that govern friction and wear in MEMS is insufficient. Therefore, systematically investigating friction and wear at MEMS scale is critical for the commercial success of many potential MEMS devices. Specifically, since many emerging MEMS devices contain more sidewall interfaces, which are topographically and chemically different from in-plane interfaces, studying the friction and wear characteristics of MEMS sidewall surfaces is important. The microinstruments that have been used to date to investigate the friction and wear characteristics of MEMS sidewall surfaces possess several limitations induced either by their design or the structural film used to fabricate them. Therefore, in this paper, we report on a single-crystal-silicon-based microinstrument to study the frictional and wear behavior of MEMS sidewalls, which not only addresses some of the limitations of other microinstruments but is also easy to fabricate. The design, modeling and fabrication of the microinstrument are described in this paper. Additionally, the coefficients of static and dynamic friction of octadecyltrichlorosilane-coated sidewall surfaces as well as sidewall surfaces with only native oxide on them are also reported in this paper. (paper)

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

DEFF Research Database (Denmark)

Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

2017-01-01

This paper proposes a new method for the investigation of the short-circuit safe operation area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the variations in SiC MOSFET electrical parameters (e.g., short-circuit current and gate–source voltage). According...... to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short-circuit...

Using of the Modern Semiconductor Devices Based on the SiC

Directory of Open Access Journals (Sweden)

Pavel Drabek

2008-01-01

Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs

International Nuclear Information System (INIS)

Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S.

2012-01-01

An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO 2 volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

Modeling of MEMS Mirrors Actuated by Phase-Change Mechanism

Directory of Open Access Journals (Sweden)

David Torres

2017-04-01

Full Text Available Given the multiple applications for micro-electro-mechanical system (MEMS mirror devices, most of the research efforts are focused on improving device performance in terms of tilting angles, speed, and their integration into larger arrays or systems. The modeling of these devices is crucial for enabling a platform, in particular, by allowing for the future control of such devices. In this paper, we present the modeling of a MEMS mirror structure with four actuators driven by the phase-change of a thin film. The complexity of the device structure and the nonlinear behavior of the actuation mechanism allow for a comprehensive study that encompasses simpler electrothermal designs, thus presenting a general approach that can be adapted to most MEMS mirror designs based on this operation principle. The MEMS mirrors presented in this work are actuated by Joule heating and tested using optical techniques. Mechanical and thermal models including both pitch and roll displacements are developed by combining theoretical analysis (using both numerical and analytical tools with experimental data and subsequently verifying with quasi-static and dynamic experiments.

Applications of MEMS for Space Exploration

Science.gov (United States)

Tang, William C.

1998-03-01

Space exploration in the coming century will emphasize cost effectiveness and highly focused mission objectives, which will result in frequent multiple missions that broaden the scope of space science and to validate new technologies on a timely basis. Micro Electro Mechanical Systems (MEMS) is one of the key enabling technologies to create cost-effective, ultra-miniaturized, robust, and functionally focused spacecraft for both robotic and human exploration programs. Examples of MEMS devices at various stages of development include microgyroscope, microseismometer, microhygrometer, quadrupole mass spectrometer, and micropropulsion engine. These devices, when proven successful, will serve as models for developing components and systems for new-millennium spacecraft.

Failure probabilities of SiC clad fuel during a LOCA in public acceptable simple SMR (PASS)

Energy Technology Data Exchange (ETDEWEB)

Lee, Youho, E-mail: euo@kaist.ac.kr; Kim, Ho Sik, E-mail: hskim25@kaist.ac.kr; NO, Hee Cheon, E-mail: hcno@kaist.ac.kr

2015-10-15

Highlights: • Graceful operating conditions of SMRs markedly lower SiC cladding stress. • Steady-state fracture probabilities of SiC cladding is below 10{sup −7} in SMRs. • PASS demonstrates fuel coolability (T < 1300 °C) with sole radiation in LOCA. • SiC cladding failure probabilities of PASS are ∼10{sup −2} in LOCA. • Cold gas gap pressure controls SiC cladding tensile stress level in LOCA. - Abstract: Structural integrity of SiC clad fuels in reference Small Modular Reactors (SMRs) (NuScale, SMART, IRIS) and a commercial pressurized water reactor (PWR) are assessed with a multi-layered SiC cladding structural analysis code. Featured with low fuel pin power and temperature, SMRs demonstrate markedly reduced incore-residence fracture probabilities below ∼10{sup −7}, compared to those of commercial PWRs ∼10{sup −6}–10{sup −1}. This demonstrates that SMRs can serve as a near-term deployment fit to SiC cladding with a sound management of its statistical brittle fracture. We proposed a novel SMR named Public Acceptable Simple SMR (PASS), which is featured with 14 × 14 assemblies of SiC clad fuels arranged in a square ring layout. PASS aims to rely on radiative cooling of fuel rods during a loss of coolant accident (LOCA) by fully leveraging high temperature tolerance of SiC cladding. An overarching assessment of SiC clad fuel performance in PASS was conducted with a combined methodology—(1) FRAPCON-SiC for steady-state performance analysis of PASS fuel rods, (2) computational fluid dynamics code FLUENT for radiative cooling rate of fuel rods during a LOCA, and (3) multi-layered SiC cladding structural analysis code with previously developed SiC recession correlations under steam environments for both steady-state and LOCA. The results show that PASS simultaneously maintains desirable fuel cooling rate with the sole radiation and sound structural integrity of fuel rods for over 36 days of a LOCA without water supply. The stress level of

MEMS capacitive force sensors for cellular and flight biomechanics

International Nuclear Information System (INIS)

Sun Yu; Nelson, Bradley J

2007-01-01

Microelectromechanical systems (MEMS) are playing increasingly important roles in facilitating biological studies. They are capable of providing not only qualitative but also quantitative information on the cellular, sub-cellular and organism levels, which is instrumental to understanding the fundamental elements of biological systems. MEMS force sensors with their high bandwidth and high sensitivity combined with their small size, in particular, have found a role in this domain, because of the importance of quantifying forces and their effect on the function and morphology of many biological structures. This paper describes our research in the development of MEMS capacitive force sensors that have already demonstrated their effectiveness in the areas of cell mechanics and Drosophila flight dynamics studies. (review article)

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Energy Technology Data Exchange (ETDEWEB)

Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

2006-07-15

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

International Nuclear Information System (INIS)

Xue Wenbin

2006-01-01

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

Fabrication of a dual-planar-coil dynamic microphone by MEMS techniques

International Nuclear Information System (INIS)

Horng, Ray-Hua; Chen, Kuo-Feng; Tsai, Yao-Cheng; Suen, Cheng-You; Chang, Chao-Chih

2010-01-01

A dual-planar-coil miniature dynamic microphone, one of the electro-acoustic transducers working with the principle of the electromagnetic induction, has been realized by semiconductor micro-processing and micro-electro-mechanical system (MEMS) techniques. This MEMS microphone mainly consists of a 1 µm thick diaphragm sandwiched by two spiral coils and vibrating in the region with the highest magnetic flux density generated by a double magnetic system. In comparison with the traditional dynamic microphone, besides the miniaturized dimension, the MEMS microphone also provides 325 times the vibration velocity of the diaphragm faster than the traditional microphone. Measured by an audio analyzer, the frequency response of the MEMS microphone is only 4.5 dBV Pa −1 lower than that of the traditional microphone in the range between 50 Hz and 20 kHz. The responsivity of −54.8 dB Pa −1 (at 1 kHz) of the MEMS device is competitive to that of a traditional commercial dynamic microphone which typically ranges from −50 to −60 dBV Pa −1 (at 1 kHz).

Olhar do cronista, registro da memória

Directory of Open Access Journals (Sweden)

Angela Maria Dutra da Silva Senra

2016-09-01

Full Text Available Propomos apresentar a pesquisa “Rastros da memória literária em crônicas dos jornais marianenses dos séculos XIX e XX” (PERPÉTUA, 2015, que tem como fonte um acervo de periódicos da cidade de Mariana (MG, hoje sob a guarda do Centro de Pesquisas Linguagem, Memória e Tradução do ICHS-UFOP. Dada a evidente relação desse acervo com a memória sociocultural da cidade, nossa pesquisa, em andamento, volta-se objetivamente para identificar e selecionar crônicas literárias publicadas nos periódicos, com a subsequente análise em sua correlação com a memória da região, sob as bases de um significativo material teórico sobre esse gênero. Assim, com vistas a adentrar no passado memorial da cidade de Mariana, apresentaremos o resultado parcial da nossa investigação, que tem proporcionado o conhecimento acerca da crônica; e do registro memorial dessa cidade em razão de sua importância no cenário histórico, social e cultural de Minas Gerais.

SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

KAUST Repository

Ramadan, Khaled S.

2012-04-01

Polymer based microelectromechanical systems (MEMS) micromachining is finding more interest in research and applications. This is due to its low cost and less time processing compared with silicon MEMS. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic devices. In addition to being processed with low cost, it is a biocompatible material with good mechanical properties. Also, amorphous silicon (α-Si) has found use as a sacrificial layer in silicon MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed using amorphous silicon (α-Si) as a sacrificial layer. Electrostatic actuation and sensing is used in many MEMS applications. SU-8 is a dielectric material which limits its direct use in electrostatic actuation. This thesis provides a MEMS process with two conductive metal electrodes that can be used for out-of-plane electrostatic applications like MEMS switches and variable capacitors. The process provides the fabrication of dimples that can be conductive or non-conductive to facilitate more flexibility for MEMS designers. This SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were tuned for two sets of thicknesses which are thin (5-10μm) and thick (130μm). Chevron bent-beam structures and different suspended beams (cantilevers and bridges) were fabricated to characterize the SU-8 process through extracting the density, Young’s Modulus and the Coefficient of Thermal Expansion (CTE) of SU-8. Also, the process was tested and used as an educational tool through which different MEMS structures were fabricated including MEMS switches, variable capacitors and thermal actuators.

Optimizing MEMS-Based Storage Devices for Mobile Battery-Powered Systems

NARCIS (Netherlands)

Khatib, M.G.; Hartel, Pieter H.

An emerging storage technology, called MEMS-based storage, promises nonvolatile storage devices with ultrahigh density, high rigidity, a small form factor, and low cost. For these reasons, MEMS-based storage devices are suitable for battery-powered mobile systems such as PDAs. For deployment in such

Differential RF MEMS interwoven capacitor immune to residual stress warping

KAUST Repository

Elshurafa, Amro M.

2012-07-27

A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

Differential RF MEMS interwoven capacitor immune to residual stress warping

KAUST Repository

Elshurafa, Amro M.; Salama, Khaled N.

2012-01-01

A RF MEMS capacitor with an interwoven structure is designed, fabricated in the PolyMUMPS process and tested in an effort to address fabrication challenges usually faced in MEMS processes. The interwoven structure was found to offer several advantages over the typical MEMS parallel-plate design including eliminating the warping caused by residual stress, eliminating the need for etching holes, suppressing stiction, reducing parasitics and providing differential capability. The quality factor of the proposed capacitor was higher than five throughout a 2–10 GHz range and the resonant frequency was in excess of 20 GHz.

UAV-borne lidar with MEMS mirror-based scanning capability

Science.gov (United States)

Kasturi, Abhishek; Milanovic, Veljko; Atwood, Bryan H.; Yang, James

2016-05-01

Firstly, we demonstrated a wirelessly controlled MEMS scan module with imaging and laser tracking capability which can be mounted and flown on a small UAV quadcopter. The MEMS scan module was reduced down to a small volume of smartphone via Bluetooth while flying on a drone, and could project vector content, text, and perform laser based tracking. Also, a "point-and-range" LiDAR module was developed for UAV applications based on low SWaP (Size, Weight and Power) gimbal-less MEMS mirror beam-steering technology and off-the-shelf OEM LRF modules. For demonstration purposes of an integrated laser range finder module, we used a simple off-the-shelf OEM laser range finder (LRF) with a 100m range, +/-1.5mm accuracy, and 4Hz ranging capability. The LRFs receiver optics were modified to accept 20° of angle, matching the transmitter's FoR. A relatively large (5.0mm) diameter MEMS mirror with +/-10° optical scanning angle was utilized in the demonstration to maintain the small beam divergence of the module. The complete LiDAR prototype can fit into a small volume of battery. The MEMS mirror based LiDAR system allows for ondemand ranging of points or areas within the FoR without altering the UAV's position. Increasing the LRF ranging frequency and stabilizing the pointing of the laser beam by utilizing the onboard inertial sensors and the camera are additional goals of the next design.

A Molecularly Imprinted Polymer (MIP)-Coated Microbeam MEMS Sensor for Chemical Detection

Science.gov (United States)

2015-09-01

ARL-RP-0536 ● SEP 2015 US Army Research Laboratory A Molecularly Imprinted Polymer (MIP)- Coated Microbeam MEMS Sensor for...ARL-RP-0536 ● SEP 2015 US Army Research Laboratory A Molecularly Imprinted Polymer (MIP)- Coated Microbeam MEMS Sensor for Chemical...TITLE AND SUBTITLE A Molecularly Imprinted Polymer (MIP)-Coated Microbeam MEMS Sensor for Chemical Detection 5a. CONTRACT NUMBER 5b. GRANT NUMBER

De interactie van SiC met Fe, Ni en hun legeringen

NARCIS (Netherlands)

Schiepers, R.C.J.

1991-01-01

De interactie tussen SiC en metalen gebaseerd op Fe en Ni is bestudeerd in het temperatuurtraject 700-1035°C door middel van vaste-stof-diffusiekoppels. In de koppels van SiC met Fe, Ni en hun legeringen treden hevige reakties op, die de vorming van een goede verbinding verhinderen. Door het grate

Manufacturing and characterization of porous SiC for flow channel inserts in dual-coolant blanket designs

International Nuclear Information System (INIS)

Bereciartu, Ainhoa; Ordas, Nerea; Garcia-Rosales, Carmen; Morono, Alejandro; Malo, Marta; Hodgson, Eric R.; Abella, Jordi; Sedano, Luis

2011-01-01

SiC is the primary candidate for the flow channel inserts in dual-coolant blanket concepts. Porous SiC ceramics are attractive candidates for this non-structural application, since they can satisfy the required properties through a low cost manufacturing route, compared to SiC f /SiC. This work shows first results of the manufacturing of porous SiC ceramics prepared with different amounts of Y 2 O 3 and Al 2 O 3 as sintering additives. C powders were used as pore-formers by their burnout during oxidation after sintering. Comparison of microstructure, porosity, flexural strength, thermal and electrical conductivity and corrosion under Pb-15.7Li of porous SiC without and with sintering additives is presented. The addition of 2.5 wt.% of Y 2 O 3 and Al 2 O 3 improves the mechanical properties, and reduces the thermal and electrical conductivity down to reasonable values. Preliminary corrosion tests under Pb-15.7 Li at 500 deg. C show that the absence of a dense coating on porous SiC leads to poor corrosion behavior.

The development of SiC whisker fabrication technology for nuclear applications

International Nuclear Information System (INIS)

Kang, Thae Khapp; Kuk, Il Hiun; Kim, Chang Kyu; Lee, Jae Chun; Lee, Ho Jin; Park, Soon Dong; Im, Gyeong Soo

1991-02-01

Some important experiments for whisker growth reactions, fabrication processes, and experiments for fabricarion of whisker reinforced composites have been performed. In order to investigate growth reaction of SiC whiskers, a conventional carbothermic reaction was tested. Based on the results of carbothermic process, a new process called silicothermic reaction was planned and some basic experiments were performed. Reaction characteristics of silicon monoxide, core material for SiC whisker growth in both of the reactions were investigated for basic data. Additionally, a hydrofluoric acid leaching process was tested for developing SiC whisker recovery process, and powder metallurgy process and melt sqeeze process were tried to develop aluminum-SiC whisker composites. (Author)

Small Incision Cataract Surgery (SICS with Clear Corneal Incision and SICS with Scleral Incision – A Comparative Study

Directory of Open Access Journals (Sweden)

Md Shafiqul Alam

2014-01-01

Full Text Available Background: Age related cataract is the leading cause of blindness and visual impairment throughout the world. With the advent of microsurgical facilities simple cataract extraction surgery has been replaced by small incision cataract surgery (SICS with posterior chamber intra ocular lens implant, which can be done either with clear corneal incision or scleral incision. Objective: To compare the post operative visual outcome in these two procedures of cataract surgery. Materials and method: This comparative study was carried out in the department of Ophthalmology, Delta Medical College & Hospital, Dhaka, Bangladesh, during the period of January 2010 to December 2012. Total 60 subjects indicated for age related cataract surgery irrespective of sex with the age range of 40-80 years with predefined inclusion and exclusion criteria were enrolled in the study. Subjects were randomly and equally distributed in 2 groups; Group A for SICS with clear corneal incision and group B for SICS with scleral incision. Post operative visual out come was evaluated by determining visual acuity and astigmatism in different occasions and was compared between groups. Statistical analysis was done by SPSS for windows version12. Results: The highest age incidence (43.3% was found between 61 to 70 years of age group. Among study subjects 40 were male and 20 were female. Preoperative visual acuity and astigmatism were evenly distributed between groups. Regarding postoperative unaided visual outcome, 6/12 or better visual acuity was found in 19.98% cases in group A and 39.6% cases in group B at 1st week. At 6th week 6/6 vision was found in 36.3% in Group A and 56.1% in Group B and 46.2% in group A and 66% in group B without and with correction respectively. With refractive correction, 6/6 vision was attained in 60% subjects of group A and 86.67% of group B at 8th week. Post operative visual acuity was statistically significant in all occasions. Postoperative astigmatism of

Feasibility of frequency-modulated wireless transmission for a multi-purpose MEMS-based accelerometer.

Science.gov (United States)

Sabato, Alessandro; Feng, Maria Q

2014-09-05

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy--especially at very low frequencies--have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

MemBrain: An Easy-to-Use Online Webserver for Transmembrane Protein Structure Prediction

Science.gov (United States)

Yin, Xi; Yang, Jing; Xiao, Feng; Yang, Yang; Shen, Hong-Bin

2018-03-01

Membrane proteins are an important kind of proteins embedded in the membranes of cells and play crucial roles in living organisms, such as ion channels, transporters, receptors. Because it is difficult to determinate the membrane protein's structure by wet-lab experiments, accurate and fast amino acid sequence-based computational methods are highly desired. In this paper, we report an online prediction tool called MemBrain, whose input is the amino acid sequence. MemBrain consists of specialized modules for predicting transmembrane helices, residue-residue contacts and relative accessible surface area of α-helical membrane proteins. MemBrain achieves a prediction accuracy of 97.9% of A TMH, 87.1% of A P, 3.2 ± 3.0 of N-score, 3.1 ± 2.8 of C-score. MemBrain-Contact obtains 62%/64.1% prediction accuracy on training and independent dataset on top L/5 contact prediction, respectively. And MemBrain-Rasa achieves Pearson correlation coefficient of 0.733 and its mean absolute error of 13.593. These prediction results provide valuable hints for revealing the structure and function of membrane proteins. MemBrain web server is free for academic use and available at www.csbio.sjtu.edu.cn/bioinf/MemBrain/. [Figure not available: see fulltext.

Multi-scale Analysis of MEMS Sensors Subject to Drop Impacts

Directory of Open Access Journals (Sweden)

Sarah Zerbini

2007-09-01

Full Text Available The effect of accidental drops on MEMS sensors are examined within the frame-work of a multi-scale finite element approach. With specific reference to a polysilicon MEMSaccelerometer supported by a naked die, the analysis is decoupled into macro-scale (at dielength-scale and meso-scale (at MEMS length-scale simulations, accounting for the verysmall inertial contribution of the sensor to the overall dynamics of the device. Macro-scaleanalyses are adopted to get insights into the link between shock waves caused by the impactagainst a target surface and propagating inside the die, and the displacement/acceleration his-tories at the MEMS anchor points. Meso-scale analyses are adopted to detect the most stresseddetails of the sensor and to assess whether the impact can lead to possible localized failures.Numerical results show that the acceleration at sensor anchors cannot be considered an ob-jective indicator for drop severity. Instead, accurate analyses at sensor level are necessary toestablish how MEMS can fail because of drops.

Fabrication and characterization of SiC and ZrC composite coating on TRISO coated particle

Energy Technology Data Exchange (ETDEWEB)

Lee, H. G.; Lee, S. H.; Kim, D. J.; Park, J. Y.; Kim, W. J. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-10-15

SiC coating is widely suggested as structural materials for nuclear application due to its excellent high irradiation resistance properties and high temperature mechanical properties. SiC coating on TRistructural-ISOtropic (TRISO) coated fuel particles plays an important role as a protective layer from radioactive fission gas and a mechanical structural layer. TRISO coating layer was deposited on a spherical particle by a FBCVD method. The ZrO{sub 2} spherical particles were used as a simulant kernel. TRISO coating layers consisting of a porous buffer layer, an inner PyC layer were sequentially deposited before depositing SiC or ZrC coating layer. In order investigate the phase of each composite coating layer, Raman analysis was conducted. SiC, ZrC coating and SiC/ZrC composite coating on spherical particle were successfully deposited via FBCVD method by adjusting source gas flow rate. In the SiC and ZrC composite coating, SiC phase and ZrC phase were observed by XRD and SEM analysis. In the condition of 100 sccm of ZrCl{sub 4}, 25 sccm of CH{sub 4}, and 30 sccm of MTS, only two phases of SiC and ZrC were observed and two phases are located with clean grain boundary.

Shock reliability analysis and improvement of MEMS electret-based vibration energy harvesters

International Nuclear Information System (INIS)

Renaud, M; Goedbloed, M; De Nooijer, C; Van Schaijk, R; Fujita, T

2015-01-01

Vibration energy harvesters can serve as a replacement solution to batteries for powering tire pressure monitoring systems (TPMS). Autonomous wireless TPMS powered by microelectromechanical system (MEMS) electret-based vibration energy harvester have been demonstrated. The mechanical reliability of the MEMS harvester still has to be assessed in order to bring the harvester to the requirements of the consumer market. It should survive the mechanical shocks occurring in the tire environment. A testing procedure to quantify the shock resilience of harvesters is described in this article. Our first generation of harvesters has a shock resilience of 400 g, which is far from being sufficient for the targeted application. In order to improve this aspect, the first important aspect is to understand the failure mechanism. Failure is found to occur in the form of fracture of the device’s springs. It results from impacts between the anchors of the springs when the harvester undergoes a shock. The shock resilience of the harvesters can be improved by redirecting these impacts to nonvital parts of the device. With this philosophy in mind, we design three types of shock absorbing structures and test their effect on the shock resilience of our MEMS harvesters. The solution leading to the best results consists of rigid silicon stoppers covered by a layer of Parylene. The shock resilience of the harvesters is brought above 2500 g. Results in the same range are also obtained with flexible silicon bumpers, which are simpler to manufacture. (paper)

Shock reliability analysis and improvement of MEMS electret-based vibration energy harvesters

Science.gov (United States)

Renaud, M.; Fujita, T.; Goedbloed, M.; de Nooijer, C.; van Schaijk, R.

2015-10-01

Vibration energy harvesters can serve as a replacement solution to batteries for powering tire pressure monitoring systems (TPMS). Autonomous wireless TPMS powered by microelectromechanical system (MEMS) electret-based vibration energy harvester have been demonstrated. The mechanical reliability of the MEMS harvester still has to be assessed in order to bring the harvester to the requirements of the consumer market. It should survive the mechanical shocks occurring in the tire environment. A testing procedure to quantify the shock resilience of harvesters is described in this article. Our first generation of harvesters has a shock resilience of 400 g, which is far from being sufficient for the targeted application. In order to improve this aspect, the first important aspect is to understand the failure mechanism. Failure is found to occur in the form of fracture of the device’s springs. It results from impacts between the anchors of the springs when the harvester undergoes a shock. The shock resilience of the harvesters can be improved by redirecting these impacts to nonvital parts of the device. With this philosophy in mind, we design three types of shock absorbing structures and test their effect on the shock resilience of our MEMS harvesters. The solution leading to the best results consists of rigid silicon stoppers covered by a layer of Parylene. The shock resilience of the harvesters is brought above 2500 g. Results in the same range are also obtained with flexible silicon bumpers, which are simpler to manufacture.

A route to strong p-doping of epitaxial graphene on SiC

KAUST Repository

Cheng, Yingchun

2010-11-09

The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

Effects of SiC and MgO on aluminabased ceramic foams filters

Directory of Open Access Journals (Sweden)

CAO Da-li

2007-11-01

Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

KAUST Repository

Ramadan, Khaled S.

2012-01-01

MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed

Memória, Identidade e Patrimônio Quilombola

Directory of Open Access Journals (Sweden)

Rodrigo da Costa Segovia

2015-12-01

Full Text Available Este artigo visa analisar a Comunidade Quilombola, sua memória e identidade, nesse contexto busca-se dialogar com a pesquisa que está sendo desenvolvida junto a Comunidade Quilombo Madeira, bem como com o projeto para conclusão do Mestrado em Memória Social e Patrimônio Cultural da Universidade Federal de Pelotas. Sendo assim não foi possível deixar de fazer colocações relacionadas a Comunidades Quilombolas, em primeiro momento abordam-se questões relativas ao termo quilombola, logo a pós uma breve apresentação da comunidade onde a pesquisa está sendo efetuada e por final acerca-se com maior ênfase as discussões sobre Memória e Identidade.

A nuclear micro battery for Mems devices

International Nuclear Information System (INIS)

Lal, A.; Bilbao Y Leon, R.M.; Guo, H.; Li, H.; Santanam, S.; Yao, R.; Blanchard, J.; Henderson, D.

2001-01-01

Micro-electromechanical Systems (MEMS) have not gained wide use because they lack the on-device power required by many important applications. Several forms of energy could be considered to supply this needed power (solar, fossil fuels, etc), but nuclear sources provide an intriguing option in terms of power density and lifetime. This paper describes several approaches for establishing the viability of nuclear sources for powering realistic MEMS devices. Isotopes currently being used include alpha and low-energy beta emitters. The sources are in both solid and liquid form, and a technique for plating a solid source from a liquid source has been investigated. Several approaches are being explored for the production of MEMS power sources. The first concept is a junction-type battery. The second concept involves a more direct use of the charged particles produced by the decay: the creation of a resonator by inducing movement due to attraction or repulsion resulting from the collection of charged particles. Performance results are provided for each of these concepts. (authors)

Noves dades sobre el mecanisme neural de la consolidació de la memòria: una oportunitat per a atenuar l’impacte emocional de les experiències traumàtiques

OpenAIRE

Lanuza, Enrique

2016-01-01

Durant la major part del segle xx, els estudis científics sobre la memòria assumien que les memòries eren immutables una vegada es consolidaven, tot i que podien perdre qualitat amb el pas del temps. Dades recents han revelat que les memòries, tot i estar ja consolidades, es tornen làbils durant la seua rememoració. Aquest descobriment implica que poden ser modificades i per tant emmagatzemades de nou amb aquestes modificacions. Aquestes investigacions obrin noves possibilitats...

Use of thermal cycling to reduce adhesion of OTS coated coated MEMS cantilevers

Science.gov (United States)

Ali, Shaikh M.; Phinney, Leslie M.

2003-01-01

°Microelectromechanical systems (MEMS) have enormous potential to contribute in diverse fields such as automotive, health care, aerospace, consumer products, and biotechnology, but successful commercial applications of MEMS are still small in number. Reliability of MEMS is a major impediment to the commercialization of laboratory prototypes. Due to the multitude of MEMS applications and the numerous processing and packaging steps, MEMS are exposed to a variety of environmental conditions, making the prediction of operational reliability difficult. In this paper, we investigate the effects of operating temperature on the in-use adhesive failure of electrostatically actuated MEMS microcantilevers coated with octadecyltrichlorosilane (OTS) films. The cantilevers are subjected to repeated temperature cycles and electrostatically actuated at temperatures between 25°C and 300°C in ambient air. The experimental results indicate that temperature cycling of the OTS coated cantilevers in air reduces the sticking probability of the microcantilevers. The sticking probability of OTS coated cantilevers was highest during heating, which decreased during cooling, and was lowest during reheating. Modifications to the OTS release method to increase its yield are also discussed.

Electrical measurement of radiation effect in SiC

Energy Technology Data Exchange (ETDEWEB)

Kanazawa, Satoshi; Kamiya, Koji; Kanno, Ikuo [Kyoto Univ. (Japan). Faculty of Engineering] [and others

1996-04-01

For aiming to limited resources and environmental conservations on the Earth, development of controlling element workable under high temperature environment was investigated so as to establish a high grade and optimum controlling system. In order to observe changes of electrical properties before and after irradiation and after annealing, and to investigate changes of carrier concentration and movability after irradiating neutron from reactor and accelerator for the SiC single crystal wafer, elucidation on neutron irradiation effect of SiC as well as finding an optimum method on nuclear conversion injection were investigated. For this reason, SiC surface was purified by its etching and was treated thermally at 1000degC for about 30 min. under argon gas atmosphere after vacuum depositing nickel on it. And then, it was irradiated neutron using Kyoto University reactor (LTL), Linac and University of Tokyo reactor (YAYOI) to measure changes of resistivity using van der Pauw. As a result, it was found that LTL irradiation data was under investigation of measuring method, that in Linac no meaning change was observed because of low irradiation, and that only YAYOI data showed increase of resistivity. (G.K.)

Strong Motion Seismograph Based On MEMS Accelerometer

Science.gov (United States)

Teng, Y.; Hu, X.

2013-12-01

application program layer mainly concludes: earthquake parameter module, local database managing module, data transmission module, remote monitoring, FTP service and so on. The application layer adopted multi-thread process. The whole strong motion seismograph was encapsulated in a small aluminum box, which size is 80mm×120mm×55mm. The inner battery can work continuesly more than 24 hours. The MEMS accelerograph uses modular design for its software part and hardware part. It has remote software update function and can meet the following needs: a) Auto picking up the earthquake event; saving the data on wave-event files and hours files; It may be used for monitoring strong earthquake, explosion, bridge and house health. b) Auto calculate the earthquake parameters, and transferring those parameters by 3G wireless broadband network. This kind of seismograph has characteristics of low cost, easy installation. They can be concentrated in the urban region or areas need to specially care. We can set up a ground motion parameters quick report sensor network while large earthquake break out. Then high-resolution-fine shake-map can be easily produced for the need of emergency rescue. c) By loading P-wave detection program modules, it can be used for earthquake early warning for large earthquakes; d) Can easily construct a high-density layout seismic monitoring network owning remote control and modern intelligent earthquake sensor.

Influence of extrusion parameters on sic distribution and properties of AA6061/SiC composites produced by kobo method

Energy Technology Data Exchange (ETDEWEB)

WoĨniak, Jarosáaw; Kostecki, Marek; Broniszewski, Kamil; Olszyna, Andrzej [Faculty of Material Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Bochniak, Wáodzimierz [Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Cracow (Poland)

2013-07-01

The influence of extrusion parameters on reinforcements distribution and properties of AA6061+x% vol. SiC p (x=0; 2.5; 5; 7.5; 10) composites was discussed in this paper The averages size of AA6061 and SiC particles were 10.6 μ m and 0.42 μ m, respectively. The composites were consolidated via powder metallurgy processing (without the sintering) and extruded by KoBo method. The microstructure was examined on each steps of production. High values of density for all produced composites were achieved. Additionally, hardness and Young’s modulus were investigated. The best reinforcement distribution and mechanical properties were obtained for composites extruded with the highest extrusion ratio. Key words: aluminum alloy, extrusion, aged hardening, metal matrix composites, microstructure.

MEMS-Electronic-Photonic Heterogeneous Integrated FMCW Ladar Source

Science.gov (United States)

2015-12-18

1   1.1.   E-­‐ PHI  PHASE  2  –  MEMS  LADAR  SOURCE...4   3.2.   PROPOSED  EO-­‐PLL   ARCHITECTURE  WITH  GATED  RAMP-­‐SWITCHING... PHI  Phase  2  –  MEMS  LADAR  Source   In  Phase  2,  we  continue  the  development  of  the  FMCW  LADAR

Role of Defects in Swelling and Creep of Irradiated SiC

Energy Technology Data Exchange (ETDEWEB)

Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2016-01-16

Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

Role of Defects in Swelling and Creep of Irradiated SiC

International Nuclear Information System (INIS)

Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar; Katoh, Yutai

2016-01-01

Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

Control of the graphene growth rate on capped SiC surface under strong Si confinement

International Nuclear Information System (INIS)

Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

2013-01-01

Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

Nanogenerators for self-powering nanosystems and piezotronics for smart MEMS/NEMS

KAUST Repository

Wang, Zhong Lin

2011-01-01

Two new fields are introduced to MEMS/NEMS: a nanogenerator that harvests mechanical energy for powering nanosystems, and strained induced piezotronics for smart MEMS. Fundamentally, due to the polarization of ions in a crystal that has non

High efficiency three-phase power factor correction rectifier using SiC switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

Kronig-Penney-like description for band gap variation in SiC polytypes

NARCIS (Netherlands)

Backes, W.H.; Nooij, de F.C.; Bobbert, P.A.; van Haeringen, W.

1996-01-01

A one-dimensional Kronig-Penney-like model for envelope wave functions is presented to explain the band gap variation of SiC polytypes. In this model the envelope functions obey discontinuous boundary conditions. The electronic band gaps of cubic and several hexagonal and rhombohedral SiC polytypes

Testing of porous SiC with dense coating under relevant conditions for Flow Channel Insert application

Energy Technology Data Exchange (ETDEWEB)

Ordás, N., E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Bereciartu, A.; García-Rosales, C. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Moroño, A.; Malo, M.; Hodgson, E.R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abellà, J.; Colominas, S. [Institut Químic de Sarrià, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, L. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

2014-10-15

Highlights: • Porous SiC coated by CVD with a dense coating was developed for Flow Channel Inserts (FCI) in dual-coolant blanket concept. • Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives. • Flexural strength, thermal and electrical conductivity, and microstructure of uncoated and coated porous SiC are presented. • Adhesion of coating to porous SiC and its corrosion behavior under Pb-17.5Li at 700 °C are shown. - Abstract: Thermally and electrically insulating porous SiC ceramics are attractive candidates for Flow Channel Inserts (FCI) in dual-coolant blanket concepts thanks to its relatively inexpensive manufacturing route. To prevent tritium permeation and corrosion by Pb-15.7 a dense coating has to be applied on the porous SiC. Despite not having structural function, FCI must exhibit sufficient mechanical strength to withstand strong thermal gradients and thermo-electrical stresses during operation. This work summarizes the results on the development of coated porous SiC for FCI. Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives and a carbonaceous phase as pore former. Sintering was performed in inert gas at 1850–1950 °C during 15 min to 3 h, followed by oxidation at 650 °C to eliminate the carbonaceous phase. The most promising bulk materials were coated with a ∼30 μm thick dense SiC by CVD. Results on porosity, bending tests, thermal and electrical conductivity are presented. The microstructure of the coating, its adhesion to the porous SiC and its corrosion behavior under Pb-17.5Li are also shown.

Deposition of SiC thin films by PECVD

CERN Document Server

Cho, N I; Kim, C K

1999-01-01

The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

The rheological properties of shear thickening fluid reinforced with SiC nanowires

Directory of Open Access Journals (Sweden)

Jianhao Ge

Full Text Available The rheological properties of shear thickening fluid (STF reinforced with SiC nanowires were investigated in this paper. Pure STF consists of 56 vol% silica nano-particles and polyethylene glycol 400 (PEG 400 solvent was fabricated; and a specific amount of SiC nanowires were dispersed into this pure STF, and then the volume fraction of PEG400 was adjusted to maintain the volume fraction of solid phase in the STF at a constant of 56%. The results showed there was almost 30% increase in the initial and shear thickening viscosity of the STF reinforced with SiC nanowires compared to the pure STF. Combining with the hydrodynamic cluster theory, the effect of the mechanism of SiC nanowire on the viscosity of STF was discussed, and based on the experimental results, an analytical model of viscosity was used to describe the rheological properties of STF, which agreed with the experimental results. Keywords: Shear thickening fluid (STF, Nanowire, Rheology, Viscosity, Analytical model

Switching Investigations on a SiC MOSFET in a TO-247 Package

DEFF Research Database (Denmark)

Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

2014-01-01

This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Science.gov (United States)

Jah, Muzar; Simon, Eric; Sharma, Ashok

2003-01-01

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Lembrar-esquecer: trabalhando com as memórias infantis

Directory of Open Access Journals (Sweden)

Renata Sieiro Fernandes

Full Text Available Baseando-se nas obras de autores que focalizam a velhice e a memória, valemo-nos da proposta de construção de conjuntos fotográficos e da metodologia de análise para elaborar um exercício/desafio semelhante para crianças da faixa etária de 9-10 anos. Em concordância com os autores, também nos propusemos a pensar sobre como a memória das crianças - assim como a dos velhos - pode se construir e se organizar por meio de suportes fotográficos representativos de fragmentos da vida cotidiana. Os dois grupos compostos por seres que se encontram nas margens do tempo, se distanciam e se aproximam nessa particularidade. Intuitiva e reflexivamente, as crianças elaboraram seus conceitos de memória, envolvendo as lembranças e os esquecimentos, representando-os de formas visuais variadas e criativas, indicando que os movimentos constitutivos da memória dão indícios de tentativas de ordenação de um tempo composto de vários tempos.

Wafer level packaging of MEMS

International Nuclear Information System (INIS)

Esashi, Masayoshi

2008-01-01

Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review. (topical review)

Distúrbios de memória em pacientes epilépticos

Directory of Open Access Journals (Sweden)

STELLA FLORINDO

1999-01-01

Full Text Available O autor estudou distúrbios de memória em pacientes epilépticos com crises parciais complexas (CPC, com os objetivos de: 1 identificar estes distúrbios; e 2 comparar os resultados dos pacientes com os dos controles. Foram estudados 50 pacientes adultos e 20 sujeitos sem enfermidades neuropsiquiátricas. Os métodos consistiram em: 1 investigação da atividade mnemônica através do Teste de Memória de Wechsler (subtestes: Armazenamento e Recuperação, Memória Recente e Memória Imediata; e 2 comparação entre os resultados de ambos os grupos. 3 associação entre SPECT Cerebral e atividade mnemônica. Nos três subtestes, os pacientes apresentaram desempenho cognitivo significativamente inferior ao dos controles (p <0,05. Constatou-se a associação entre hipofluxo em região temporal esquerda e distúrbio da memória nos três subtestes. Concluiu-se que há associação entre CPC e distúrbios da atividade mnemônica.

Evaluation of MEMS-Based Wireless Accelerometer Sensors in Detecting Gear Tooth Faults in Helicopter Transmissions

Science.gov (United States)

Lewicki, David George; Lambert, Nicholas A.; Wagoner, Robert S.

2015-01-01

The diagnostics capability of micro-electro-mechanical systems (MEMS) based rotating accelerometer sensors in detecting gear tooth crack failures in helicopter main-rotor transmissions was evaluated. MEMS sensors were installed on a pre-notched OH-58C spiral-bevel pinion gear. Endurance tests were performed and the gear was run to tooth fracture failure. Results from the MEMS sensor were compared to conventional accelerometers mounted on the transmission housing. Most of the four stationary accelerometers mounted on the gear box housing and most of the CI's used gave indications of failure at the end of the test. The MEMS system performed well and lasted the entire test. All MEMS accelerometers gave an indication of failure at the end of the test. The MEMS systems performed as well, if not better, than the stationary accelerometers mounted on the gear box housing with regards to gear tooth fault detection. For both the MEMS sensors and stationary sensors, the fault detection time was not much sooner than the actual tooth fracture time. The MEMS sensor spectrum data showed large first order shaft frequency sidebands due to the measurement rotating frame of reference. The method of constructing a pseudo tach signal from periodic characteristics of the vibration data was successful in deriving a TSA signal without an actual tach and proved as an effective way to improve fault detection for the MEMS.

Micro-fabrication technology for piezoelectric film formation and its application to MEMS

OpenAIRE

一木, 正聡; 曹, 俊杰; 張, 麓〓; 王, 占杰; 前田, 龍太郎; Masaaki, ICHIKI; Jiunn Jye, TSAUR; Lulu, ZHANG; Zhang Jie, WANG; Ryutaro, MAEDA; 産業技術総合研究所; 産業技術総合研究所; 産業技術総合研究所; 東北大学; 産業技術総合研究所

2005-01-01

Technological problems for realization of Micro Electro-mechanical System (MEMS) are discussed and an introduction of smart materials (PZT) is encouraged. The film formation and micromaching technology are discussed in integration of PZT thin films into MEMS. Further developments are proposed on PZT micro sensors and actuators with special emphasis laid on exploration of new application fields of MEMS, such as scanning mirror. Internal stress is estimated and analyzed for the improvement of d...

Mechanical Properties and Elastic Constants Due to Damage Accumulation and Amorphization in SiC

International Nuclear Information System (INIS)

Gao, Fei; Weber, William J.

2004-01-01

Damage accumulation due to cascade overlap, which was simulated previously, has been used to study the changes of elastic constants, bulk and elastic moduli as a function of dose. These mechanical properties generally decrease with increasing dose, and the rapid decrease at low-dose level indicates that point defects and small clusters play an important role in the changes of elastic constants rather than topological disorder. The internal strain relaxation has no effect on the elastic constants, C11 and C12, in perfect SiC, but it has a significant influence on all elastic constants calculated in damaged SiC. The elastic constants in the cascade-amorphized (CA) SiC decrease about 19%, 29% and 46% for C11, C12 and C44, respectively. The bulk modulus decrease 23% and the elastic modulus decreases 29%, which is consistent with experimental measurements. The stability of both the perfect SiC and CA-SiC under hydrostatic tension has been also investigated. All mechanical properties in the CA-SiC exhibit behavior similar to that in perfect SiC, but the critical stress at which the CA-SiC becomes structurally unstable is one order of magnitude smaller than that for perfect SiC

Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

Science.gov (United States)

Alghunaim, Naziha Suliman

2018-06-01

Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

Proposal of a SiC disposal canister for very deep borehole disposal

Energy Technology Data Exchange (ETDEWEB)

Choi, Heui-Joo; Lee, Minsoo; Lee, Jong-Youl; Kim, Kyungsu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-10-15

In this paper authors proposed a silicon carbide, SiC, disposal canister for the DBD concept in Korea. A. Kerber et al. first proposed the SiC canister for a geological disposal of HLW, CANDU or HTR spent nuclear fuels. SiC has some drawbacks in welding or manufacturing a large canister. Thus, we designed a double layered disposal canister consisting of a stainless steel outer layer and a SiC inner layer. KAERI has been interested in developing a very deep borehole disposal (DBD) of HLW generated from pyroprocessing of PWR spent nuclear fuel and supported the relevant R and D with very limited its own budget. KAERI team reviewed the DBD concept proposed by Sandia National Laboratories (SNL) and developed its own concept. The SNL concept was based on the steel disposal canister. The authors developed a new technology called cold spray coating method to manufacture a copper-cast iron disposal canister for a geological disposal of high level waste in Korea. With this method, 8 mm thin copper canister with 400 mm in diameter and 1200 mm in height was made. In general, they do not give any credit on the lifetime of a disposal canister in DBD concept unlike the geological disposal. In such case, the expensive copper canister should be replaced with another one. We designed a disposal canister using SiC for DBD. According to an experience in manufacturing a small size canister, the fabrication of a large-size one is a challenge. Also, welding of SiC canister is not easy. Several pathways are being paved to overcome it.

Feasibility of Frequency-Modulated Wireless Transmission for a Multi-Purpose MEMS-Based Accelerometer

Directory of Open Access Journals (Sweden)

Alessandro Sabato

2014-09-01

Full Text Available Recent advances in the Micro Electro-Mechanical System (MEMS technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM of civil engineering structures. To date, sensors’ low sensitivity and accuracy—especially at very low frequencies—have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor’s analog signals are converted to digital signals before radio-frequency (RF wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F instead of the conventional Analog to Digital Conversion (ADC. In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

U.S. Army Corrosion Office's storage and quality requirements for military MEMS program

Science.gov (United States)

Zunino, J. L., III; Skelton, D. R.

2007-04-01

As the Army transforms into a more lethal, lighter and agile force, the technologies that support these systems must decrease in size while increasing in intelligence. Micro-electromechanical systems (MEMS) are one such technology that the Army and DOD will rely on heavily to accomplish these objectives. Conditions for utilization of MEMS by the military are unique. Operational and storage environments for the military are significantly different than those found in the commercial sector. Issues unique to the military include; high G-forces during gun launch, extreme temperature and humidity ranges, extended periods of inactivity (20 years plus) and interaction with explosives and propellants. The military operational environments in which MEMS will be stored or required to function are extreme and far surpass any commercial operating conditions. Security and encryption are a must for all MEMS communication, tracking, or data reporting devices employed by the military. Current and future military applications of MEMS devices include safety and arming devices, fuzing devices, various guidance systems, sensors/detectors, inertial measurement units, tracking devices, radio frequency devices, wireless Radio Frequency Identifications (RFIDs) and network systems, GPS's, radar systems, mobile base systems and information technology. MEMS embedded into these weapons systems will provide the military with new levels of speed, awareness, lethality, and information dissemination. The system capabilities enhanced by MEMS will translate directly into tactical and strategic military advantages.

Development of a Multi-User Polyimide-MEMS Fabrication Process and its Application to MicroHotplates

KAUST Repository

Lizardo, Ernesto B.

2013-01-01

Micro-electro-mechanical systems (MEMS) became possible thanks to the silicon based technology used to fabricate integrated circuits. Originally, MEMS fabrication was limited to silicon based techniques and materials, but the expansion of MEMS

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

Science.gov (United States)

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H; Peterson, Tracy C; Shul, Randy J; Ahlers, Catalina; Plut, Thomas A; Patrizi, Gary A

2013-12-03

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

MEMS for Space Flight Applications

Science.gov (United States)

Lawton, R.

1998-01-01

Micro-Electrical Mechanical Systems (MEMS) are entering the stage of design and verification to demonstrate the utility of the technology for a wide range of applications including sensors and actuators for military, space, medical, industrial, consumer, automotive and instrumentation products.

MEMS and mil/aero: technology push and market pull

Science.gov (United States)

Clifford, Thomas H.

2001-04-01

MEMS offers attractive solutions to high-density fluidics, inertial, optical, switching and other demanding military/aerospace (mil/aero) challenges. However, full acceptance must confront the realities of production-scale producibility, verifiability, testability, survivability, as well as long-term reliability. Data on these `..ilities' are crucial, and are central in funding and deployment decisions. Similarly, mil/aero users must highlight specific missions, environmental exposures, and procurement issues, as well as the quirks of its designers. These issues are particularly challenging in MEMS, because of the laws of physics and business economics, as well as the risks of deploying leading-edge technology into no-fail applications. This paper highlights mil/aero requirements, and suggests reliability/qualification protocols, to guide development effort and to reassure mil/aero users that MEMS labs are mindful of the necessary realities.

Amplitude saturation of MEMS resonators explained by autoparametric resonance

International Nuclear Information System (INIS)

Van der Avoort, C; Bontemps, J J M; Steeneken, P G; Le Phan, K; Van Beek, J T M; Van der Hout, R; Hulshof, J; Fey, R H B

2010-01-01

This paper describes a phenomenon that limits the power handling of MEMS resonators. It is observed that above a certain driving level, the resonance amplitude becomes independent of the driving level. In contrast to previous studies of power handling of MEMS resonators, it is found that this amplitude saturation cannot be explained by nonlinear terms in the spring constant or electrostatic force. Instead we show that the amplitude in our experiments is limited by nonlinear terms in the equation of motion which couple the in-plane length-extensional resonance mode to one or more out-of-plane (OOP) bending modes. We present experimental evidence for the autoparametric excitation of these OOP modes using a vibrometer. The measurements are compared to a model that can be used to predict a power-handling limit for MEMS resonators

Amplitude saturation of MEMS resonators explained by autoparametric resonance

Energy Technology Data Exchange (ETDEWEB)

Van der Avoort, C; Bontemps, J J M; Steeneken, P G; Le Phan, K; Van Beek, J T M [NXP Research, Eindhoven (Netherlands); Van der Hout, R; Hulshof, J [Department of Mathematics, VU University—Faculty of Sciences, De Boelelaan 1081a, 1081 HV Amsterdam (Netherlands); Fey, R H B, E-mail: cas.van.der.avoort@nxp.com [Department of Mechanical Engineering, Eindhoven University of Technology, PO Box 513, 5600 MB, Eindhoven (Netherlands)

2010-10-15

This paper describes a phenomenon that limits the power handling of MEMS resonators. It is observed that above a certain driving level, the resonance amplitude becomes independent of the driving level. In contrast to previous studies of power handling of MEMS resonators, it is found that this amplitude saturation cannot be explained by nonlinear terms in the spring constant or electrostatic force. Instead we show that the amplitude in our experiments is limited by nonlinear terms in the equation of motion which couple the in-plane length-extensional resonance mode to one or more out-of-plane (OOP) bending modes. We present experimental evidence for the autoparametric excitation of these OOP modes using a vibrometer. The measurements are compared to a model that can be used to predict a power-handling limit for MEMS resonators.

An improved design of TRISO particle with porous SiC inner layer by fluidized bed-chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Liu, Rongzheng; Liu, Malin, E-mail: liumalin@tsinghua.edu.cn; Chang, Jiaxing; Shao, Youlin; Liu, Bing

2015-12-15

Tristructural-isotropic (TRISO) particle has been successful in high temperature gas cooled reactor (HTGR), but an improved design is required for future development. In this paper, the coating layers are reconsidered, and an improved design of TRISO particle with porous SiC inner layer is proposed. Three methods of preparing the porous SiC layer, called high methyltrichlorosilane (MTS) concentration method, high Ar concentration method and hexamethyldisilane (HMDS) method, are experimentally studied. It is indicated that porous SiC layer can be successfully prepared and the density of SiC layer can be adjusted by tuning the preparation parameters. Microstructure and characterization of the improved TRISO coated particle are given based on scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering and energy dispersive X-ray (EDX) analysis. It can be found that the improved TRISO coated particle with porous SiC layer can be mass produced successfully. The formation mechanisms of porous SiC layer are also discussed based on the fluidized bed-chemical vapor deposition principle. - Graphical abstract: An improved design of TRISO particle with porous SiC inner layer to replace the inner porous pyrolytic carbon layer was proposed and prepared by FB-CVD method. This new design is aimed to reduce the total internal pressure of the particles by reducing the formation of CO and to reduce the risks of amoeba effect. - Highlights: • An improved design of TRISO particle with porous SiC inner layer was proposed. • Three methods of preparing porous SiC layer are proposed and experimentally studied. • The density of porous SiC layer can be controlled by adjusting experimental parameters. • Formation mechanisms of porous SiC layer were given based on the FB-CVD principle. • TRISO particles with porous SiC inner layer were mass produced successfully.

In-situ synthesis of SiC particles by the structural evolution of TiCx in Al–Si melt

International Nuclear Information System (INIS)

Nie, Jinfeng; Li, Dakui; Wang, Enzhao; Liu, Xiangfa

2014-01-01

Highlights: • A facile method to in-situ synthesize SiC was developed utilizing the structural evolution of TiC x in Al–Si melt. • The SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. • The SiC particles and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composite were prepared. • The wear resistance effect of SiC on the based alloy was investigated. - Abstract: A facile method has been developed to in-situ synthesize SiC particles utilizing the structural instability and evolution of TiC x in Al–Si melt. It is considered that the synthesis of SiC particles occurs via the gradual reaction between TiC x and Si atoms, whilst Si content plays the crucial role in this approach. If the Si content in the melt is above 30%, TiC x directly reacts with Si and Al to form SiC, but the needle-like TiAl x Si y phase formed simultaneously will do harm to the mechanical properties of the composites. Thus, it is proposed to add B element in the melt to transform the TiAl x Si y into TiB 2 particles. Therefore, the SiC and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composites were successfully prepared using the method. In the composites, the SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. Furthermore, the mechanical properties of base alloy, including the wear resistance and macro-hardness, have been obviously improved by the in-situ SiC particles. Besides, the relevant underlying mechanisms are also discussed

High efficiency battery converter with SiC devices for residential PV systems

DEFF Research Database (Denmark)

Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

2013-01-01

The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench...

Avaliação da memória sob anestesia venosa total

Directory of Open Access Journals (Sweden)

Gulistan Aktas

2013-06-01

Full Text Available JUSTIFICATIVA E OBJETIVOS: Neste estudo, objetivamos avaliar a memória implícita e explícita em pacientes submetidos à cirurgia abdominal sob anestesia venosa total (AVT com propofol e remifentanil, na qual o nível de anestesia foi controlado pelo monitoramento do índice bispectral (BIS. MÉTODO: Anestesia venosa total foi administrada a 60 pacientes adultos para obter níveis de BIS de 40-60. Os pacientes foram randomicamente divididos em três grupos, de acordo com as gravações que ouviram. Os pacientes do grupo categoria (CT ouviram uma fita gravada contendo cinco nomes de animais. Os pacientes do grupo recordar palavras (RP ouviram uma fita gravada contendo cinco palavras de frequência média na língua turca, depois de adaptadas. Os pacientes do grupo controle (GC ouviram os sons do mar até o fim da cirurgia. Duas horas após a cirurgia, os testes foram administrados a cada paciente na sala de recuperação para avaliar a memória. RESULTADOS: Houve uma diferença entre os escores dos grupos CT e GC no Miniexame do Estado Mental (MMSE; todos os escores foram > 20. Os resultados dos testes de categoria e recordar palavras, aplicados para avaliar a memória implícita, não foram estatisticamente diferentes entre os grupos. Não houve evidência de memória implícita em nenhum dos pacientes. Um paciente lembrou-se de ouvir "o som de água" como uma prova de memória explícita. Onze pacientes declararam não ter sonhado. CONCLUSÕES: Apesar de não termos encontrado nenhuma evidência de memória implícita sob anestesia adequada com AVT, um paciente apresentou memória explícita. Embora a profundidade adequada da anestesia fornecida pelo monitoramento do BIS corrobore nossos resultados para a memória implícita, ela não explica os resultados para a memória explícita.

Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

Energy Technology Data Exchange (ETDEWEB)

Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-08-15

This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Integrated Magnetic MEMS Relays: Status of the Technology

Directory of Open Access Journals (Sweden)

Giuseppe Schiavone

2014-08-01

Full Text Available The development and application of magnetic technologies employing microfabricated magnetic structures for the production of switching components has generated enormous interest in the scientific and industrial communities over the last decade. Magnetic actuation offers many benefits when compared to other schemes for microelectromechanical systems (MEMS, including the generation of forces that have higher magnitude and longer range. Magnetic actuation can be achieved using different excitation sources, which create challenges related to the integration with other technologies, such as CMOS (Complementary Metal Oxide Semiconductor, and the requirement to reduce power consumption. Novel designs and technologies are therefore sought to enable the use of magnetic switching architectures in integrated MEMS devices, without incurring excessive energy consumption. This article reviews the status of magnetic MEMS technology and presents devices recently developed by various research groups, with key focuses on integrability and effective power management, in addition to the ability to integrate the technology with other microelectronic fabrication processes.

Finite element modeling of micromachined MEMS photon devices

Science.gov (United States)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Finite Element Modeling of Micromachined MEMS Photon Devices

International Nuclear Information System (INIS)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-01-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness

Hydrogen activated axial inter-conversion in SiC nanowires

International Nuclear Information System (INIS)

Ruemmeli, Mark H.; Adebimpe, David B.; Borowiak-Palen, Ewa; Gemming, Thomas; Ayala, Paola; Ioannides, Nicholas; Pichler, Thomas; Huczko, Andrzej; Cudzilo, Stanislaw; Knupfer, Martin; Buechner, Bernd

2009-01-01

A facile low pressure annealing route using NH 3 as a hydrogen source for the structural and chemical modification of SiC nanowires (SiCNWs) is presented. The developed route transforms SiCNWs into tubular SiC nanostructures while coaxial SiO 2 /SiCNWs reverse their sheath/core structure. Our findings suggest a decomposition process induced via the preferential substitution of silicon by hydrogen and via the difference in diffusion rates of available atomic species, which leads to axial structural rearrangement. In addition to these effects, the procedure improves the crystallinity of the samples. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation. - Graphical abstract: SiC and SiO 2 /SiCNWs are shown to be structurally modified through a hydrogen activated replacement route which can even lead to the axial inter-conversion of species. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation

Development of the Electromagnetic Induction Type Micro Air Turbine Generator Using MEMS and Multilayer Ceramic Technology

International Nuclear Information System (INIS)

Iiduka, A; Ishigaki, K; Takikawa, Y; Ohse, T; Saito, K; Uchikoba, F

2011-01-01

The miniaturized electromagnetic induction type air turbine generator is described. The micro air turbine generator rotated by the compressed air and generating electricity was fabricated by the combination of MEMS and multilayer ceramic technology. The micro generator consisted of an air turbine and a magnetic circuit. The turbine part consisted of 7 silicon layers fabricated by the MEMS technology. The magnetic circuit was fabricated by the multilayer ceramic technology based on the green sheet process. The magnetic material used in the circuit was ferrite, and the internal conductor was silver. The dimensions of the obtained generator were 3.5x4x3.5 mm. The output power was 1.92 μW. From FEM analysis of the magnetic flux, it was found that leakage of the flux affected the output power.

Normal Isocurvature Surfaces and Special Isocurvature Circles (SIC)

Science.gov (United States)

Manoussakis, Gerassimos; Delikaraoglou, Demitris

2010-05-01

An isocurvature surface of a gravity field is a surface on which the value of the plumblines' curvature is constant. Here we are going to study the isocurvature surfaces of the Earth's normal gravity field. The normal gravity field is a symmetric gravity field therefore the isocurvature surfaces are surfaces of revolution. But even in this case the necessary relations for their study are not simple at all. Therefore to study an isocurvature surface we make special assumptions to form a vector equation which will hold only for a small coordinate patch of the isocurvature surface. Yet from the definition of the isocurvature surface and the properties of the normal gravity field is possible to express very interesting global geometrical properties of these surfaces without mixing surface differential calculus. The gradient of the plumblines' curvature function is vertical to an isocurvature surface. If P is a point of an isocurvature surface and "Φ" is the angle of the gradient of the plumblines' curvature with the equatorial plane then this direction points to the direction along which the curvature of the plumbline decreases / increases the most, and therefore is related to the strength of the normal gravity field. We will show that this direction is constant along a line of curvature of the isocurvature surface and this line is an isocurvature circle. In addition we will show that at each isocurvature surface there is at least one isocurvature circle along which the direction of the maximum variation of the plumblines' curvature function is parallel to the equatorial plane of the ellipsoid of revolution. This circle is defined as a Special Isocurvature Circle (SIC). Finally we shall prove that all these SIC lye on a special surface of revolution, the so - called SIC surface. That is to say, a SIC is not an isolated curve in the three dimensional space.

Passivation of surface-nanostructured f-SiC and porous SiC

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang; Ou, Yiyu

The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

A Musical instrument in MEMS

NARCIS (Netherlands)

Engelen, Johannes Bernardus Charles; de Boer, Hans L.; de Boer, H.; Beekman, J.G.; Been, A.J.; Folkertsma, Gerrit Adriaan; Folkertsma, G.A.; Fortgens, L.; de Graaf, D.; Vocke, S.; Woldering, L.A.; Abelmann, Leon; Elwenspoek, Michael Curt

In this work we describe a MEMS instrument that resonates at audible frequencies, and with which music can be made. The sounds are generated by mechanical resonators and capacitive displacement sensors. Damping by air scales unfavourably for generating audible frequencies with small devices.

MEMS based digital transform spectrometers

Science.gov (United States)

Geller, Yariv; Ramani, Mouli

2005-09-01

Earlier this year, a new breed of Spectrometers based on Micro-Electro-Mechanical-System (MEMS) engines has been introduced to the commercial market. The use of these engines combined with transform mathematics, produces powerful spectrometers at unprecedented low cost in various spectral regions.

Ohmic Contacts to P-Type SiC

National Research Council Canada - National Science Library

Crofton, John

2000-01-01

Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

An Electrically Actuated Microbeam-Based MEMS Device: Experimental and Theoretical Investigation

KAUST Repository

Ruzziconi, Laura

2017-11-03

The present paper deals with the dynamic behavior of a microelectromechanical systems (MEMS). The device consists of a clamped-clamped microbeam electrostatically and electrodynamically actuated. Our objective is to develop a theoretical analysis, which is able to describe and predict all the main relevant aspects of the experimental response. In the first part of the paper an extensive experimental investigation is conducted. The microbeam is perfectly straight. The first three experimental natural frequencies are identified and the nonlinear dynamics are explored at increasing values of electrodynamic excitation. Several backward and forward frequency sweeps are acquired. The nonlinear behavior is highlighted. The experimental data show the coexistence of the nonresonant and the resonant branch, which perform a bending toward higher frequencies values before undergoing jump or pull-in dynamics. This kind of bending is not particularly common in MEMS. In the second part of the paper, a theoretical single degree-of-freedom model is derived. The unknown parameters are extracted and settled via parametric identification. A single mode reduced-order model is considered, which is obtained via the Galerkin technique. To enhance the computational efficiency, the contribution of the electric force term is computed in advance and stored in a table. Extensive numerical simulations are performed at increasing values of electrodynamic excitation. They are observed to properly predict all the main nonlinear features arising in the device response. This occurs not only at low values of electrodynamic excitation, but also at higher ones

Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

Institute of Scientific and Technical Information of China (English)

MIN Xinmin; LU Ning; MEI Bingchu

2006-01-01

The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

Aprendizado e memória Learning and memory

Directory of Open Access Journals (Sweden)

Paul Lombroso

2004-09-01

Full Text Available A memória é dividida de duas grandes formas: explícita e implícita. O hipocampo é necessário para a formação das memórias explícitas, ao passo que várias outras regiões do cérebro, incluindo o estriado, a amígdala e o nucleus accumbens, estão envolvidos na formação das memórias implícitas. A formação de todas as memórias requer alterações morfológicas nas sinapses: novas sinapses devem ser formadas ou antigas precisam ser fortalecidas. Considera-se que essas alterações reflitam a base celular subjacente das memórias persistentes. Consideráveis avanços têm ocorrido na última década em relação a nossa compreensão sobre as bases moleculares da formação dessas memórias. Um regulador-chave da plasticidade sináptica é uma via de sinalização que inclui a proteína-quinase ativada por mitógenos (MAP. Como essa via é necessária para a memória e o aprendizado normais, não é surpreendente que as mutações nos membros dessa via levem a prejuízos no aprendizado. A neurofibromatose, a síndrome de Coffin-Lowry e a de Rubinstein-Taybi são três exemplos de transtornos de desenvolvimento que apresentam mutações em componentes-chave na via de sinalização da proteína-quinase MAP.Memory is broadly divided into declarative and nondeclarative forms of memory. The hippocampus is required for the formation of declarative memories, while a number of other brain regions including the striatum, amygdala and nucleus accumbens are involved in the formation of nondeclarative memories. The formation of all memories require morphological changes of synapses: new ones must be formed or old ones strengthened. These changes are thought to reflect the underlying cellular basis for persistent memories. Considerable advances have occurred over the last decade in our understanding of the molecular bases of how these memories are formed. A key regulator of synaptic plasticity is a signaling pathway that includes the mitogen

Cryogenic MEMS Pressure Sensor, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A directly immersible cryogenic MEMS pressure sensor will be developed. Each silicon die will contain a vacuum-reference and a tent-like membrane. Offsetting thermal...

Tailoring of SiC nanoprecipitates formed in Si

Energy Technology Data Exchange (ETDEWEB)

Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2013-07-15

The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

Liquid phase sintered SiC ceramics from starting materials of different grade Cerâmicas à base de SiC sinterizadas via fase líquida a partir de matérias-primas de diferentes purezas

Directory of Open Access Journals (Sweden)

V. A. Izhevskyi

2004-09-01

Full Text Available Possibility of high performance ceramics manufactured from commercial SiC powder of technical grade has been shown. Sintering behavior and microstructure formation under conditions of liquid phase sintering (LPS with oxynitride sintering aids (AlN-Y2O3 of three SiC-based compositions have been investigated. Two of the compositions were based on Alcoa 1000 SiC powder of technical grade, and the third one, which was used as a reference, was based on H.C. Starck UF-15 fine grade commercial powder. Milling process used for Alcoa 1000 SiC powder granulometry improvement has been investigated in detail, while chemical treatment of milled SiC powders has been used for pick-up impurities removal. Dilatometric experiments showed that SiC powder of technical grade after appropriate treatment exhibits sinterability comparable with the fine grade SiC. Microstructural investigations performed on sintered samples showed that the final microstructure of the Alcoa 1000 SiC based materials was practically identical with the H.C. Starck SiC based reference ones. Preliminary investigations of hardness and fracture toughness were carried out revealing excellent results for the materials produced from cheaper, nationally produced starting powder.Neste trabalho é apresentada a possibilidade de obtenção de cerâmicas de SiC de alto desempenho a partir de matéria-prima comercial de grau técnico. Foi realizado o estudo de sinterização via fase líquida e desenvolvimento microestrutural de três composições à base de SiC tendo como aditivos de sinterização AlN e Y2O3 . Duas destas composições são à base de SiC-1000 da Alcoa, grau técnico, e a terceira, utilizada como referência, à base do UF-15 da H.C. Starck - Alemanha, pó comercial de granulometria fina. O processo de moagem do pó SiC-1000 da Alcoa foi acompanhado por medidas de distribuição granulométrica e posterior ataque químico, para remoção de impurezas. Os pós de grau técnico, ap

Vortex-MEMS filters for wavelength-selective orbital-angular-momentum beam generation

DEFF Research Database (Denmark)

Paul, Sujoy; Lyubopytov, Vladimir; Schumann, Martin F.

2017-01-01

In this paper an on-chip device capable of wavelength-selective generation of vortex beams is demonstrated. The device is realized by integrating a spiral phase-plate onto a MEMS tunable Fabry-Perot filter. This vortex-MEMS filter, being capable of functioning simultaneously in wavelength...

Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

Directory of Open Access Journals (Sweden)

Qisong Li

2016-02-01

Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

Science.gov (United States)

Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

2018-02-01

The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

Development of Dual-Axis MEMS Accelerometers for Machine Tools Vibration Monitoring

Directory of Open Access Journals (Sweden)

Chih-Yung Huang

2016-07-01

Full Text Available With the development of intelligent machine tools, monitoring the vibration by the accelerometer is an important issue. Accelerometers used for measuring vibration signals during milling processes require the characteristics of high sensitivity, high resolution, and high bandwidth. A commonly used accelerometer is the lead zirconate titanate (PZT type; however, integrating it into intelligent modules is excessively expensive and difficult. Therefore, the micro electro mechanical systems (MEMS accelerometer is an alternative with the advantages of lower price and superior integration. In the present study, we integrated two MEMS accelerometer chips into a low-pass filter and housing to develop a low-cost dual-axis accelerometer with a bandwidth of 5 kHz and a full scale range of ±50 g for measuring machine tool vibration. In addition, a platform for measuring the linearity, cross-axis sensitivity and frequency response of the MEMS accelerometer by using the back-to-back calibration method was also developed. Finally, cutting experiments with steady and chatter cutting were performed to verify the results of comparing the MEMS accelerometer with the PZT accelerometer in the time and frequency domains. The results demonstrated that the dual-axis MEMS accelerometer is suitable for monitoring the vibration of machine tools at low cost.

Wireless MEMs BioSensor, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Crossfield is proposing to develop a low cost, single chip plant bio-monitor using an embedded MEMs based infrared (IR) spectroscopy gas sensor for carbon dioxide...

MEMS Sensors and Actuators Laboratory (MSAL)

Data.gov (United States)

Federal Laboratory Consortium — The MEMS Sensors and Actuators Laboratory (MSAL) in the A.J. Clark School of Engineering at the University of Maryland (UMD) was established in January 2000. Our lab...

Study on porosity of ceramic SiC using small angle neutron scattering

International Nuclear Information System (INIS)

Li Jizhou; Yang Jilian; Kang Jian; Ye Chuntang

1996-01-01

The mechanical properties of functional heat-resistant ceramics SiC are significantly influenced by the concentration and dimensions of pores. Small angle neutron scattering measurements for 3 SiC samples with different densities are performed on C1-2 SANS instrument of the University of Tokyo. Two groups of the neutron data are obtained using 8 and 16 m of secondary flight path, 1 and 0.7 nm of neutron wave lengths, respectively. After deduction of background measurement and transmission correction, both neutron data are linked up with each other. The patterns of neutron data of 3 samples with Q range from 0.028∼0.5 nm -1 are almost with axial symmetry, showing that the shape of pores is almost spherical. Using Mellin transform, size distributions of pores in 3 samples are obtained. The average size (∼19 nm) of pores for hot-pressed SiC sample with higher density is smaller than the others (∼ 21 nm). It seems to be the reason why the density of hot-pressed SiC sample is higher than not hot-pressed sample

A ABEn e a preservação da memória profissional: implantação do Centro de Memória da Enfermagem Brasileira

OpenAIRE

Santos, Tânia Cristina Franco

2013-01-01

Estudo histórico-social, que objetivou analisar e discutir a importância do Centro de Memória da Enfermagem Brasileira para preservação e divulgação da memória profissional. Utilizou-se como fontes de dados o documentário Associação Brasileira de Enfermagem: 1926-1976, além do Projeto de Implantação e do Relatório Técnico do Acervo Documental e Fônico do Centro de Memória, ambos arquivados no referido Centro. Os dados, coletados em junho de 2013, foram submetidos a crítica externa e interna, ...

Videometrics-based Detection of Vibration Linearity in MEMS Gyroscope

Directory of Open Access Journals (Sweden)

Yong Zhou

2011-05-01

Full Text Available MEMS gyroscope performs as a sort of sensor to detect angular velocity, with diverse applications in engineering including vehicle and intelligent traffic etc. A balanced vibration of driving module excited by electrostatic driving signal is the base MEMS gyroscope's performance. In order to analyze the linear property of vibration in MEMS Gyroscope, a method of computer vision measuring is applied with the help of high-speed vidicon to obtain video of linear vibration of driving module in gyroscope, under the driving voltage signal of inherent frequency and amplitude linearly increasing. By means of image processing, target identifying, and motion parameter extracting from the obtained video, vibration curve with time variation is acquired. And then, linearity of this vibration system can be analyzed by focusing on the amplitude value of vibration responding to the amplitude variation of driving voltage signal.

Modeling of biaxial gimbal-less MEMS scanning mirrors

Science.gov (United States)

von Wantoch, Thomas; Gu-Stoppel, Shanshan; Senger, Frank; Mallas, Christian; Hofmann, Ulrich; Meurer, Thomas; Benecke, Wolfgang

2016-03-01

One- and two-dimensional MEMS scanning mirrors for resonant or quasi-stationary beam deflection are primarily known as tiny micromirror devices with aperture sizes up to a few Millimeters and usually address low power applications in high volume markets, e.g. laser beam scanning pico-projectors or gesture recognition systems. In contrast, recently reported vacuum packaged MEMS scanners feature mirror diameters up to 20 mm and integrated high-reflectivity dielectric coatings. These mirrors enable MEMS based scanning for applications that require large apertures due to optical constraints like 3D sensing or microscopy as well as for high power laser applications like laser phosphor displays, automotive lighting and displays, 3D printing and general laser material processing. This work presents modelling, control design and experimental characterization of gimbal-less MEMS mirrors with large aperture size. As an example a resonant biaxial Quadpod scanner with 7 mm mirror diameter and four integrated PZT (lead zirconate titanate) actuators is analyzed. The finite element method (FEM) model developed and computed in COMSOL Multiphysics is used for calculating the eigenmodes of the mirror as well as for extracting a high order (n system inputs and scanner displacement as system output. By applying model order reduction techniques using MATLABR a compact state space system approximation of order n = 6 is computed. Based on this reduced order model feedforward control inputs for different, properly chosen scanner displacement trajectories are derived and tested using the original FEM model as well as the micromirror.

The influence of various dielectric parameters on the reststrahlen region of SiC

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Rooyen, I.J. van

2011-01-01

The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: → An anomalous peak observed in the reststrahlen band of SiC was investigated. → The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. → The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. → Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

The influence of various dielectric parameters on the reststrahlen region of SiC

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); National Laser Centre, CSIR, PO Box 395, Pretoria 0001 (South Africa)

2011-02-01

The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: {yields} An anomalous peak observed in the reststrahlen band of SiC was investigated. {yields} The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. {yields} The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. {yields} Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

Thermal conductivity analysis of SiC ceramics and fully ceramic microencapsulated fuel composites

International Nuclear Information System (INIS)

Lee, Hyeon-Geun; Kim, Daejong; Lee, Seung Jae; Park, Ji Yeon; Kim, Weon-Ju

2017-01-01

Highlights: • Thermal conductivity of SiC ceramics and FCM pellets was measured and discussed. • Thermal conductivity of FCM pellets was analyzed by the Maxwell-Eucken equation. • Effective thermal conductivity of TRISO particles applied in this study was assumed. - Abstract: The thermal conductivity of SiC ceramics and FCM fuel composites, consisting of a SiC matrix and TRISO coated particles, was measured and analyzed. SiC ceramics and FCM pellets were fabricated by hot press sintering with Al_2O_3 and Y_2O_3 sintering additives. Several factors that influence thermal conductivity, specifically the content of sintering additives for SiC ceramics and the volume fraction of TRISO particles and the matrix thermal conductivity of FCM pellets, were investigated. The thermal conductivity values of samples were analyzed on the basis of their microstructure and the arrangement of TRISO particles. The thermal conductivity of the FCM pellets was compared to that predicted by the Maxwell-Eucken equation and the thermal conductivity of TRISO coated particles was calculated. The thermal conductivity of FCM pellets in various sintering conditions was in close agreement to that predicted by the Maxwell-Eucken equation with the fitted thermal conductivity value of TRISO particles.

Effect of oxygen on the processes of ion beam synthesis of buried SiC layers in silicon

International Nuclear Information System (INIS)

Artamonov, V.V.; Valakh, M.Ya.; Klyuj, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

1998-01-01

The properties of Si-structures with buried silicon carbide (SiC) layers created by high dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. Effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layers are more effectively formed in Cz-Si or in Si subjected to additional oxygen implantation. Thus, oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

X-ray micro computed tomography characterization of cellular SiC foams for their applications in chemical engineering

Energy Technology Data Exchange (ETDEWEB)

Ou, Xiaoxia [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Zhang, Xun; Lowe, Tristan [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Blanc, Remi [FEI, 3 Impasse Rudolf Diesel, BP 50227, 33708 Mérignac (France); Rad, Mansoureh Norouzi [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Wang, Ying [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Batail, Nelly; Pham, Charlotte [SICAT SARL, 20 Place des Halles, 67000 Strasbourg (France); Shokri, Nima; Garforth, Arthur A. [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom); Withers, Philip J. [Henry Moseley X-ray Imaging Facility, Materials Science Centre, School of Materials, The University of Manchester, M13 9PL (United Kingdom); Fan, Xiaolei, E-mail: xiaolei.fan@manchester.ac.uk [School of Chemical Engineering and Analytical Science, The University of Manchester, M13 9PL (United Kingdom)

2017-01-15

Open-cell SiC foams clearly are promising materials for continuous-flow chemical applications such as heterogeneous catalysis and distillation. X-ray micro computed tomography characterization of cellular β-SiC foams at a spatial voxel size of 13.6{sup 3} μm{sup 3} and the interpretation of morphological properties of SiC open-cell foams with implications to their transport properties are presented. Static liquid hold-up in SiC foams was investigated through in-situ draining experiments for the first time using the μ-CT technique providing thorough 3D information about the amount and distribution of liquid hold-up inside the foam. This will enable better modeling and design of structured reactors based on SiC foams in the future. In order to see more practical uses, μ-CT data of cellular foams must be exploited to optimize the design of the morphology of foams for a specific application. - Highlights: •Characterization of SiC foams using novel X-ray micro computed tomography. •Interpretation of structural properties of SiC foams regarding to their transport properties. •Static liquid hold-up analysis of SiC foams through in-situ draining experiments.

MEMS and Nano-Technology Clean Room

Data.gov (United States)

Federal Laboratory Consortium — The MEMS and Nano-Technology Clean Room is a state-of-the-art, 800 square foot, Class 1000-capable facility used for development of micro and sub-micro scale sensors...

Porous SiC ceramics fabricated by quick freeze casting and solid state sintering

Directory of Open Access Journals (Sweden)

Feng Wang

2017-06-01

Full Text Available Porous SiC ceramics with uniform microstructure were fabricated by quick freezing in liquid nitrogen and solid state sintering. Poly (vinyl alcohol (PVA was added as binder and pore morphology controller in this work. The microstructure and mechanical properties of porous SiC ceramics could be controlled by the composition of the aqueous slurries. Both solid content of the slurries and PVA content impacted on the pore structures and mechanical properties of the porous SiC ceramics. The solid content of slurries and PVA content varied from 60 to 67.5 wt% and 2–6 wt%, respectively. Besides, the grain morphology of ceramics was also tailored by changing the sintering temperature from 2050 to 2150 °C. Porous SiC ceramics with an average porosity of 42.72%, flexural strength of 59.28 MPa were obtained at 2150 °C from 67.5 wt% slurries with 2 wt% PVA.

Enabling MEMS technologies for communications systems

Science.gov (United States)

Lubecke, Victor M.; Barber, Bradley P.; Arney, Susanne

2001-11-01

Modern communications demands have been steadily growing not only in size, but sophistication. Phone calls over copper wires have evolved into high definition video conferencing over optical fibers, and wireless internet browsing. The technology used to meet these demands is under constant pressure to provide increased capacity, speed, and efficiency, all with reduced size and cost. Various MEMS technologies have shown great promise for meeting these challenges by extending the performance of conventional circuitry and introducing radical new systems approaches. A variety of strategic MEMS structures including various cost-effective free-space optics and high-Q RF components are described, along with related practical implementation issues. These components are rapidly becoming essential for enabling the development of progressive new communications systems technologies including all-optical networks, and low cost multi-system wireless terminals and basestations.

Integrated MEMS-based variable optical attenuator and 10Gb/s receiver

Science.gov (United States)

Aberson, James; Cusin, Pierre; Fettig, H.; Hickey, Ryan; Wylde, James

2005-03-01

MEMS devices can be successfully commercialized in favour of competing technologies only if they offer an advantage to the customer in terms of lower cost or increased functionality. There are limited markets where MEMS can be manufactured cheaper than similar technologies due to large volumes: automotive, printing technology, wireless communications, etc. However, success in the marketplace can also be realized by adding significant value to a system at minimal cost or leverging MEMS technology when other solutions simply will not work. This paper describes a thermally actuated, MEMS based, variable optical attenuator that is co-packaged with existing opto-electronic devices to develop an integrated 10Gb/s SONET/SDH receiver. The configuration of the receiver opto-electronics and relatively low voltage availability (12V max) in optical systems bar the use of LCD, EO, and electro-chromic style attenuators. The device was designed and fabricated using a silicon-on-insulator (SOI) starting material. The design and performance of the device (displacement, power consumption, reliability, physical geometry) was defined by the receiver parameters geometry. This paper will describe how these design parameters (hence final device geometry) were determined in light of both the MEMS device fabrication process and the receiver performance. Reference will be made to the design tools used and the design flow which was a joint effort between the MEMS vendor and the end customer. The SOI technology offered a robust, manufacturable solution that gave the required performance in a cost-effective process. However, the singulation of the devices required the development of a new singulation technique that allowed large volumes of silicon to be removed during fabrication yet still offer high singulation yields.

Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

1994-12-01

The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

Effect of organic additives on mechanical properties of SiC ceramics prepared by a modified gelcasting method

Directory of Open Access Journals (Sweden)

Feng Wang

2016-12-01

Full Text Available A novel and simple gel system of isobutylene and maleic anhydride (PIBM was used to prepare SiC ceramics. The rheological behaviour of the SiC slurries was investigated as function of organic additives. The SiC slurries with 0.2 wt.% PIBM and 0.2 wt.% tetramethylammonium hydroxide (TMAH showed low viscosity, which was favourable for casting SiC green bodies. In order to obtain homogeneous green bodies, polyvinyl alcohol (PVA was used to assist the dispersion of carbon black in the slurries, and polyethylene glycol (PEG was added to inhibit the surface exfoliation of green bodies. The content of PVA was controlled carefully to avoid the warpage of green bodies during the drying process. Finally, homogeneous defect-free SiC green bodies were successfully fabricated via aqueous gelcasting. The SiC ceramics sintered at 2100 °C (prepared from slurries with solid content of 60 wt.% showed an average flexural strength of 305.7 MPa with porosity of 19.92%.

Design and Fabrication of a Reconfigurable MEMS-Based Antenna

KAUST Repository

Martinez, Miguel Angel Galicia

2011-06-22

This thesis presents the design and fabrication of a customized in house Micro-Electro-Mechanical-Systems (MEMS) process based on-chip antenna that is both frequency and polarization reconfigurable. It is designed to work at both 60 GHz and 77 GHz through MEMS switches. This antenna can also work in both horizontal and vertical linear polarizations by utilizing a moveable plate. The design is intended for Wireless Personal Area Networks (WPAN) and automotive radar applications. Typical on-chip antennas are inefficient and difficult to reconfigure. Therefore, the focus of this work is to develop an efficient on-chip antenna solution, which is reconfigurable in frequency and in polarization. A fractal bowtie antenna is employed for this thesis, which achieves frequency reconfigurability through MEMS switches. The design is simulated in industry standard Electromagnetic (EM) simulator Ansoft HFSS. A novel concept for horizontal to vertical linear polarization agility is introduced which incorporates a moveable polymer plate. For this work, a microprobe is used to move the plate from the horizontal to vertical position. For testing purposes, a novel mechanism has been designed in order to feed the antenna with RF-probes in both horizontal and vertical positions. A simulated gain of approximately 0 dB is achieved at both target frequencies (60 and 77 GHz), in both horizontal and vertical positions. In all the cases mentioned above (both frequencies and positions), the antenna is well matched (< -10 dB) to the 50 Ω system impedance. Similarly, the radiation nulls are successfully shifted by changing the position of the antenna from horizontal to vertical. The complete design and fabrication of the reconfigurable MEMS antenna has been done at KAUST facilities. Some challenges have been encountered during its realization due to the immaturity of the customized MEMS fabrication process. Nonetheless, a first fabrication attempt has highlighted such shortcomings. According

Direct integration of MEMS, dielectric pumping and cell manipulation with reversibly bonded gecko adhesive microfluidics

International Nuclear Information System (INIS)

Warnat, S; King, H; Hubbard, T; Wasay, A; Sameoto, D

2016-01-01

We present an approach to form a microfluidic environment on top of MEMS dies using reversibly bonded microfluidics. The reversible polymeric microfluidics moulds bond to the MEMS die using a gecko-inspired gasket architecture. In this study the formed microchannels are demonstrated in conjunction with a MEMS mechanical single cell testing environment for BioMEMS applications. A reversible microfluidics placement technique with an x - y and rotational accuracy of  ±2 µ m and 1° respectively on a MEMS die was developed. No leaks were observed during pneumatic pumping of common cell media (PBS, sorbitol, water, seawater) through the fluidic channels. Thermal chevron actuators were successful operated inside this fluidic environment and a performance deviation of ∼15% was measured compared to an open MEMS configuration. Latex micro-spheres were pumped using traveling wave di-electrophoresis and compared to an open (no-microfluidics) configuration with velocities of 24 µ m s −1 and 20 µ m s −1 . (technical note)

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-01-01

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS

Creep behavior for advanced polycrystalline SiC fibers

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

1997-04-01

A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

Preparation and performance of Pt/PTFE/Foam SiC as a hydrophobic catalyst for LPCE

International Nuclear Information System (INIS)

He, Jianchao; Wang, Heyi; Xiao, Chengjian; Li, Jiamao; Chen, Ping; Hou, Jingwei

2016-01-01

Highlights: • A new type of foam material, Foam SiC with three-dimensional network structure, was chosen as the carrier of catalyst. • Foam SiC was hydrophobic treated by PTFE, and achieved a good hydrophobic property. • Pt/PTFE/Foam SiC was prepared by impregnation method with Pt-organic solution and gaseous phase reduction method. • The hydrophobic catalysts were packed with Dixon phosphor bronze gauze rings (about 3 mm × 3 mm) in LPCE system to test the catalytic performance. • The effect of different size of the catalyst on LPCE was been tested. - Abstract: Platinum catalysts supported on a composite of polytetrafluoroethylene (PTFE) and Foam SiC (Pt/PTFE/Foam SiC) have been proposed and prepared by an impregnation method. The as-prepared Pt/PTFE/Foam SiC was characterized by compression load testing, dynamic contact angle measurement, SEM, XRD, and TEM. The results show that the catalyst prepared by triple hydrophobic treatment had an initial contact angle of 134.2°, a good compression performance of 3.2 MPa, and platinum nanoparticles of 12.1 nm (average size). The catalytic activity of the catalyst was tested with different packing methods, reaction temperatures, and gas-liquid ratios. An excellent hydrogen isotope exchange performance was observed using a hydrophilic packing material-to-catalyst ratio of 25% and reaction temperature of 80 °C. Pt/PTFE/Foam SiC may be used as a hydrophobic catalyst for a water detritiation system (WDS) via a liquid-phase catalytic exchange process (LPCE).

Preparation and performance of Pt/PTFE/Foam SiC as a hydrophobic catalyst for LPCE

Energy Technology Data Exchange (ETDEWEB)

He, Jianchao; Wang, Heyi, E-mail: hywang@caep.cn; Xiao, Chengjian; Li, Jiamao; Chen, Ping; Hou, Jingwei

2016-12-15

Highlights: • A new type of foam material, Foam SiC with three-dimensional network structure, was chosen as the carrier of catalyst. • Foam SiC was hydrophobic treated by PTFE, and achieved a good hydrophobic property. • Pt/PTFE/Foam SiC was prepared by impregnation method with Pt-organic solution and gaseous phase reduction method. • The hydrophobic catalysts were packed with Dixon phosphor bronze gauze rings (about 3 mm × 3 mm) in LPCE system to test the catalytic performance. • The effect of different size of the catalyst on LPCE was been tested. - Abstract: Platinum catalysts supported on a composite of polytetrafluoroethylene (PTFE) and Foam SiC (Pt/PTFE/Foam SiC) have been proposed and prepared by an impregnation method. The as-prepared Pt/PTFE/Foam SiC was characterized by compression load testing, dynamic contact angle measurement, SEM, XRD, and TEM. The results show that the catalyst prepared by triple hydrophobic treatment had an initial contact angle of 134.2°, a good compression performance of 3.2 MPa, and platinum nanoparticles of 12.1 nm (average size). The catalytic activity of the catalyst was tested with different packing methods, reaction temperatures, and gas-liquid ratios. An excellent hydrogen isotope exchange performance was observed using a hydrophilic packing material-to-catalyst ratio of 25% and reaction temperature of 80 °C. Pt/PTFE/Foam SiC may be used as a hydrophobic catalyst for a water detritiation system (WDS) via a liquid-phase catalytic exchange process (LPCE).

Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

Energy Technology Data Exchange (ETDEWEB)

Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

2015-05-16

MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

Payload characterization for CubeSat demonstration of MEMS deformable mirrors

Science.gov (United States)

Marinan, Anne; Cahoy, Kerri; Webber, Matthew; Belikov, Ruslan; Bendek, Eduardo

2014-08-01

Coronagraphic space telescopes require wavefront control systems for high-contrast imaging applications such as exoplanet direct imaging. High-actuator-count MEMS deformable mirrors (DM) are a key element of these wavefront control systems yet have not been flown in space long enough to characterize their on-orbit performance. The MEMS Deformable Mirror CubeSat Testbed is a conceptual nanosatellite demonstration of MEMS DM and wavefront sensing technology. The testbed platform is a 3U CubeSat bus. Of the 10 x 10 x 34.05 cm (3U) available volume, a 10 x 10 x 15 cm space is reserved for the optical payload. The main purpose of the payload is to characterize and calibrate the onorbit performance of a MEMS deformable mirror over an extended period of time (months). Its design incorporates both a Shack Hartmann wavefront sensor (internal laser illumination), and a focal plane sensor (used with an external aperture to image bright stars). We baseline a 32-actuator Boston Micromachines Mini deformable mirror for this mission, though the design is flexible and can be applied to mirrors from other vendors. We present the mission design and payload architecture and discuss experiment design, requirements, and performance simulations.

Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

Directory of Open Access Journals (Sweden)

Huibin Zhang

2017-02-01

Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

Corrosion and wear behavior of functionally graded Al2024/SiC composites produced by hot pressing and consolidation

Energy Technology Data Exchange (ETDEWEB)

Erdemir, Fatih; Canakci, Aykut, E-mail: aykut@ktu.edu.tr; Varol, Temel; Ozkaya, Serdar

2015-09-25

Highlights: • Functionally graded Al2024/SiC composites were produced by hot pressing. • Effect of the number of graded layers was investigated on the corrosion behavior. • Functionally graded composites has the most corrosion resistant than composites. • Wear mechanisms of Al2024/SiC composites were explained. - Abstract: Functionally graded Al2024/SiC composites (FGMs) with varying percentage of SiC (30–60%) were produced by hot pressing and consolidation method. The effects of SiC content and number of layers of Al2024/SiC FGMs on the corrosion and wear behaviors were investigated. The microstructures of these composites were characterized by a scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS). The corrosion performances of composites were evaluated by potentiodynamic polarization scans in 3.5% NaCl solution. Corrosion experiments shows that corrosion rate (1109 mpy) of two layered FGMs which containing 50 wt.% SiC were much higher than Al2024 matrix (2569 mpy) and Al2024/50 wt.% SiC composite (2201 mpy). Mechanical properties of these composites were evaluated by microhardness measurements and ball-on-disk wear tests. As the applied load change from 15 to 20 N, the wear rates of the Al2024 increased significantly and wear mechanism transformed from mild to severe wear regime. It has been shown that Al2024/40 wt.% SiC composite has lower wear rate where adhesive and abrasive wear mechanisms play a major role.

Resonant Magnetic Field Sensors Based On MEMS Technology

Directory of Open Access Journals (Sweden)

Elías Manjarrez

2009-09-01

Full Text Available Microelectromechanical systems (MEMS technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration.

Resonant Magnetic Field Sensors Based On MEMS Technology

Science.gov (United States)

Herrera-May, Agustín L.; Aguilera-Cortés, Luz A.; García-Ramírez, Pedro J.; Manjarrez, Elías

2009-01-01

Microelectromechanical systems (MEMS) technology allows the integration of magnetic field sensors with electronic components, which presents important advantages such as small size, light weight, minimum power consumption, low cost, better sensitivity and high resolution. We present a discussion and review of resonant magnetic field sensors based on MEMS technology. In practice, these sensors exploit the Lorentz force in order to detect external magnetic fields through the displacement of resonant structures, which are measured with optical, capacitive, and piezoresistive sensing techniques. From these, the optical sensing presents immunity to electromagnetic interference (EMI) and reduces the read-out electronic complexity. Moreover, piezoresistive sensing requires an easy fabrication process as well as a standard packaging. A description of the operation mechanisms, advantages and drawbacks of each sensor is considered. MEMS magnetic field sensors are a potential alternative for numerous applications, including the automotive industry, military, medical, telecommunications, oceanographic, spatial, and environment science. In addition, future markets will need the development of several sensors on a single chip for measuring different parameters such as the magnetic field, pressure, temperature and acceleration. PMID:22408480

Effect of SiC whisker addition on the microstructures and mechanical properties of Ti(C, N)-based cermets

International Nuclear Information System (INIS)

Wu, Peng; Zheng, Yong; Zhao, Yongle; Yu, Haizhou

2011-01-01

Ti(C, N)-based cermets with addition of SiC whisker (SiC w ) were prepared by vacuum sintering. The microstructures of the prepared cermets were investigated by using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). Mechanical properties such as transverse rupture strength (TRS), fracture toughness (K IC ) and hardness (HRA) were also measured. It was found that the grain size of the cermets was affected by the SiC whisker addition. The cermets with 1.0 wt.% SiC whisker addition exhibited the smallest grain size. The porosities of the cermets increased with increasing SiC whisker additions. The addition of the SiC whisker had no influence on the phase constituents of the cermets. Compared with the cermets with no whisker addition, the highest TRS and fracture toughness for cermets with 1.0 wt.% SiC whisker addition increased by about 24% and 29%, respectively. The strengthening mechanisms were attributed to finer grain size, homogeneous microstructure and moderate thickness of rim phase. The toughening mechanisms were characterized by crack deflection, whisker bridging and whisker pulling-out.

Optical study on neutron irradiation effect on hexagonal SiC single crystal

Energy Technology Data Exchange (ETDEWEB)

Okada, Moritami; Kimura, Itsurou; Kanazawa, Satoshi; Kanno, Ikuo; Kamiya, Koji [Kyoto Univ. (Japan); Nakata, Toshitake; Watanabe, Masanori; Nakagawa, Masuo; Atobe, Kozo

1996-04-01

It is well known that SiC is a higher radiation resistant semiconductor on comparison with Si and Ge. Recently, on accompanying with advancement of developing program on nuclear fission reactor on space, development of electronic element workable effectively under severe radiation environment is desired. SiC is expected as one of such elements. Therefore, because of considering importance of understanding the effect on fundamental properties of SiC electronic element under radiation environment before its development, some studies on it was executed. In this paper, according to find out induction of interesting defect center in hexagonal 4H- and 6H-SiC single crystals irradiated with reactor neutron on light absorption and SER test, outlines of these experimental results were reported. (G.K.)

A Compact and Low-Cost MEMS Loudspeaker for Digital Hearing Aids.

Science.gov (United States)

Sang-Soo Je; Rivas, F; Diaz, R E; Jiuk Kwon; Jeonghwan Kim; Bakkaloglu, B; Kiaei, S; Junseok Chae

2009-10-01

A microelectromechanical-systems (MEMS)-based electromagnetically actuated loudspeaker to reduce form factor, cost, and power consumption, and increase energy efficiency in hearing-aid applications is presented. The MEMS loudspeaker has multilayer copper coils, an NiFe soft magnet on a thin polyimide diaphragm, and an NdFeB permanent magnet on the perimeter. The coil impedance is measured at 1.5 Omega, and the resonant frequency of the diaphragm is located far from the audio frequency range. The device is driven by a power-scalable, 0.25-mum complementary metal-oxide semiconductor class-D SigmaDelta amplifier stage. The class-D amplifier is formed by a differential H-bridge driven by a single bit, pulse-density-modulated SigmaDelta bitstream at a 1.2-MHz clock rate. The fabricated MEMS loudspeaker generates more than 0.8-mum displacement, equivalent to 106-dB sound pressure level (SPL), with 0.13-mW power consumption. Driven by the SigmaDelta class-D amplifier, the MEMS loudspeaker achieves measured 65-dB total harmonic distortion (THD) with a measurement uncertainty of less than 10%. Energy-efficient and cost-effective advanced hearing aids would benefit from further miniaturization via MEMS technology. The results from this study appear very promising for developing a compact, mass-producible, low-power loudspeaker with sufficient sound generation for hearing-aid applications.

A porous SiC ammonia sensor

NARCIS (Netherlands)

Connolly, E.J.; Timmer, B.H.; Pham, H.T.M.; Groeneweg, J.; Sarro, P.M.; Olthuis, Wouter; French, P.J.

2005-01-01

When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as 0.5 ppm could be detected. We report the fabrication and preliminary

Origin of the high p-doping in F intercalated graphene on SiC

KAUST Repository

Cheng, Yingchun

2011-08-04

The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].